Heat treatment apparatus and heat treatment method

Abstract

We provide a technology that can achieve both thermal insulation and etching resistance in thermal insulation structures. [Solution] A heat treatment apparatus according to one aspect of the present disclosure comprises a treatment container having an opening at its lower end, a lid for opening and closing the opening of the treatment container, a heater provided around the treatment container, and a heat insulating structure provided on the lid, wherein the heat insulating structure has a first plate, and a second plate and a third plate provided so as to sandwich the first plate in the thickness direction, the first plate, the second plate and the third plate having a flat plate shape formed of quartz, and the first plate includes a supply port for supplying an inert gas and a communication hole communicating from the supply port to the outer surface.

Description

【Technical Field】 【0001】 The present disclosure relates to a heat treatment apparatus and a heat treatment method. 【Background Art】 【0002】 Patent Document 1 discloses a technique for improving the heat insulation effect of the furnace opening at the lower part of a heat treatment furnace by using a heat insulation structure including an opaque quartz heat insulation plate that prevents the transmission of heat rays in a vertical heat treatment apparatus. The surface of the opaque quartz heat insulation plate of the heat insulation structure is coated with a transparent quartz layer. 【Prior Art Documents】 【Patent Documents】 【0003】 【Patent Document 1】 Japanese Patent Laid-Open No. 11-97360 【Summary of the Invention】 【Problems to be Solved by the Invention】 【0004】 The present disclosure provides a technique capable of achieving both heat insulation and etching resistance of a heat insulation structure. 【Means for Solving the Problems】 【0005】 A heat treatment apparatus according to an aspect of the present disclosure includes a processing container having an opening at a lower end, a lid for opening and closing the opening of the processing container, a heater provided around the processing container, and a heat insulation structure provided on the lid. The heat insulation structure has a first plate body, and a second plate body and a third plate body provided so as to sandwich the first plate body in a thickness direction. The first plate body, the second plate body, and the third plate body have a flat plate shape formed of quartz. The first plate body includes a supply port to which an inert gas is supplied and a communication hole communicating from the supply port to an outer peripheral surface. 【Effects of the Invention】 【0006】 According to the present disclosure, it is possible to achieve both heat insulation and etching resistance of the heat insulation structure. [Brief explanation of the drawing] 【0007】 [Figure 1] This is a vertical cross-sectional view showing a heat treatment apparatus according to an embodiment. [Figure 2] This is a horizontal cross-sectional view showing a heat treatment apparatus according to an embodiment. [Figure 3] This is a vertical cross-sectional view showing the boat support structure provided in the heat treatment apparatus shown in Figure 1. [Figure 4] Figure 3 is a vertical cross-sectional view showing the thermal insulation structure. [Figure 5] Figure 3 is a horizontal cross-sectional view showing the thermal insulation structure. [Figure 6] This is a vertical cross-sectional view showing a modified boat support structure. [Figure 7] This is a vertical cross-sectional view showing the thermal insulation structure in Figure 6. [Figure 8] Figure 6 is a horizontal cross-sectional view showing the thermal insulation structure. [Modes for carrying out the invention] 【0008】 Hereinafter, exemplary embodiments of the present disclosure, not limited to those described herein, will be described with reference to the attached drawings. In all attached drawings, identical or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted. 【0009】 [Heat treatment equipment] The heat treatment apparatus 1 according to the embodiment will be described with reference to Figures 1 and 2. Figure 1 is a vertical cross-sectional view showing the heat treatment apparatus 1 according to the embodiment. Figure 2 is a horizontal cross-sectional view showing the heat treatment apparatus 1 according to the embodiment. 【0010】 The heat treatment apparatus 1 is a batch-type apparatus that processes multiple substrates W at once. The substrates W are, for example, semiconductor wafers. The heat treatment apparatus 1 comprises a processing container 10, a gas supply unit 30, an exhaust unit 40, a heater 50, and a control unit 90. 【0011】 The processing container 10 is capable of reducing the internal pressure. The processing container 10 houses the substrate W. The processing container 10 has an inner tube 11 and an outer tube 12. The inner tube 11 has a cylindrical shape with a ceiling that is open at the lower end. The outer tube 12 has a cylindrical shape with a ceiling that is open at the lower end and covers the outside of the inner tube 11. The inner tube 11 and the outer tube 12 are made of a heat-resistant material such as quartz. The inner tube 11 and the outer tube 12 have a double-tube structure arranged coaxially. 【0012】 A housing section 13 for accommodating a gas supply pipe is formed along the longitudinal direction (vertical direction) of the inner pipe 11. For example, a portion of the side wall of the inner pipe 11 is made to protrude outward to form a convex portion 14, and the inside of the convex portion 14 is formed as the housing section 13. 【0013】 A rectangular opening 15 is formed along the longitudinal direction on the side wall of the inner tube 11. The opening 15 faces the housing section 13. 【0014】 The opening 15 is a gas exhaust port formed to allow the gas inside the inner pipe 11 to be exhausted. The length of the opening 15 is the same as the length of the boat 16, or it is longer than the length of the boat 16 and extends vertically in both directions. 【0015】 The lower end of the processing container 10 is supported by a cylindrical manifold 17. The manifold 17 is made of, for example, stainless steel. A flange 18 is formed at the upper end of the manifold 17. The flange 18 supports the lower end of the outer pipe 12. A sealing member 19, such as an O-ring, is provided between the flange 18 and the lower end of the outer pipe 12. This maintains an airtight seal inside the outer pipe 12. 【0016】 An annular support portion 20 is provided on the upper inner wall of the manifold 17. The support portion 20 supports the lower end of the inner pipe 11. 【0017】 A lid body 21 is hermetically attached to the opening at the lower end of the manifold 17 via a sealing member 22 such as an O-ring. Thereby, the opening 10a at the lower end of the processing container 10, that is, the opening of the manifold 17 is hermetically closed. The lid body 21 is formed of, for example, stainless steel. 【0018】 A rotating shaft 24 is provided to penetrate through the central portion of the lid body 21 via a magnetic fluid seal 23. The lower portion of the rotating shaft 24 is rotatably supported by an arm 25A of a lifting mechanism 25 formed of a boat elevator. 【0019】 A rotating plate 26 is provided at the upper end of the rotating shaft 24. A boat 16 is placed on the rotating plate 26 via a heat insulating structure 60. The boat 16 rotates by rotating the rotating shaft 24. The boat 16 moves up and down integrally with the lid body 21 by raising and lowering the lifting mechanism 25. Thereby, the boat 16 is inserted into and removed from the processing container 10. The boat 16 can be accommodated in the processing container 10. The boat 16 holds a plurality of substrates W in a shelf shape. The boat 16 holds a plurality of substrates W substantially horizontally with a gap in the vertical direction. The number of substrates W held by the boat 16 is not limited, but is, for example, 5 or more and 200 or less. 【0020】 The gas supply unit 30 is configured to be able to supply various processing gases into the inner pipe 11. The gas supply unit 30 includes a first gas supply unit 31, a second gas supply unit 32, and a third gas supply unit 33. 【0021】 A<00001t01>The first gas supply unit 31 includes a gas supply pipe 31a in the processing container 10 and a supply flow path 31b outside the processing container 10. In the supply flow path 31b, a first gas source 31c, a mass flow controller 31d, and a valve 31e are provided in order from the upstream side to the downstream side in the gas flow direction. Thereby, the first gas from the first gas source 31c is controlled in supply timing by the valve 31e and adjusted to a predetermined flow rate by the mass flow controller 31d. The first gas flows from the supply flow path 31b into the gas supply pipe 31a and is discharged from the gas supply pipe 31a into the processing container 10. 【0022】 The second gas supply unit 32 includes a gas supply pipe 32a inside the processing container 10 and a supply channel 32b outside the processing container 10. In the supply channel 32b, a second gas source 32c, a mass flow controller 32d, and a valve 32e are provided in order from the upstream side to the downstream side in the direction of gas flow. As a result, the supply timing of the second gas from the second gas source 32c is controlled by the valve 32e, and the flow rate is adjusted to a predetermined level by the mass flow controller 32d. The second gas flows from the supply channel 32b into the gas supply pipe 32a and is discharged from the gas supply pipe 32a into the processing container 10. 【0023】 The third gas supply unit 33 includes a gas supply pipe 33a inside the processing container 10 and a supply channel 33b outside the processing container 10. In the supply channel 33b, a third gas source 33c, a mass flow controller 33d, and a valve 33e are provided in order from the upstream side to the downstream side in the direction of gas flow. As a result, the supply timing of the third gas from the third gas source 33c is controlled by the valve 33e, and the flow rate is adjusted to a predetermined level by the mass flow controller 33d. The third gas flows from the supply channel 33b into the gas supply pipe 33a and is discharged from the gas supply pipe 33a into the processing container 10. 【0024】 Each gas supply pipe 31a, 32a, and 33a is fixed to the manifold 17. Each gas supply pipe 31a, 32a, and 33a is made of, for example, quartz. Each gas supply pipe 31a, 32a, and 33a extends linearly in the vertical direction near the inner pipe 11 and then extends horizontally in an L-shape within the manifold 17, thereby penetrating the manifold 17. The gas supply pipes 31a, 32a, and 33a are arranged side by side along the circumferential direction of the inner pipe 11 and are formed at the same height. 【0025】 Multiple outlets 31f, 32f, and 33f are provided in the inner tubes 11 of each of the gas supply pipes 31a, 32a, and 33a. Each outlet 31f, 32f, and 33f is formed at predetermined intervals along the extending direction of each gas supply pipe 31a, 32a, and 33a. Each outlet 31f, 32f, and 33f discharges gas horizontally from the radially outer side of the substrate W toward the substrate W. Each outlet 31f, 32f, and 33f discharges gas parallel to the main surface of the substrate W. The spacing between the outlets is set to be the same as, for example, the spacing between the substrates W held in the boat 16. The height position of each outlet is set to be, for example, an intermediate position between adjacent substrates W in the vertical direction. In this case, each outlet can efficiently supply gas to the opposing surfaces between adjacent substrates W. 【0026】 The types of the first gas, second gas, and third gas are not particularly limited, but may include film-forming gases, cleaning gases, and inert gases. The gas supply unit 30 may mix multiple types of gases and discharge the mixed gas from a single gas supply pipe. Each gas supply pipe 31a, 32a, and 33a may have a different shape or arrangement from one another. The gas supply unit 30 may further include a gas supply pipe for supplying another gas. 【0027】 The exhaust section 40 exhausts the gas discharged from the inner pipe 11 through the opening 15 and the gas discharged from the gas outlet 41 through the space P1 between the inner pipe 11 and the outer pipe 12. The gas outlet 41 is formed on the upper side wall of the manifold 17, above the support section 20. An exhaust passage 42 is connected to the gas outlet 41. A valve 43 and a vacuum pump 44 are sequentially installed in the exhaust passage 42 to allow exhaust from inside the processing container 10. 【0028】 The heater 50 is provided around the outer tube 12. The heater 50 is provided, for example, on the base plate 28. The heater 50 has a cylindrical shape so as to cover the outer tube 12. The heater 50 heats each substrate W inside the processing container 10. 【0029】 The control unit 90 is an electronic circuit such as a CPU (Central Processing Unit), FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit). The control unit 90 performs the various control operations described in this specification by executing instruction codes stored in memory or by circuit design for special applications. 【0030】 [Boat support structure] Referring to Figures 3 to 5, the boat support structure 2 provided in the heat treatment apparatus 1 of Figure 1 will be described. Figure 3 is a vertical cross-sectional view showing the boat support structure 2 provided in the heat treatment apparatus 1 of Figure 1. Figure 4 is a vertical cross-sectional view showing the thermal insulation structure 60 of Figure 3. Figure 5 is a horizontal cross-sectional view showing the thermal insulation structure 60 of Figure 3. Figure 5 corresponds to a cross-sectional view along the VV line in Figure 4. In Figures 4 and 5, arrows F1, F2, F3, and F4 indicate the flow of inert gas. 【0031】 The boat support structure 2 includes a lid 21, a sealing member 22, a magnetic fluid seal 23, a rotating shaft 24, a lifting mechanism 25, a rotating plate 26, a boat support section 27, a heat insulating structure 60, and an inert gas supply section 70. The lid 21, sealing member 22, magnetic fluid seal 23, rotating shaft 24, lifting mechanism 25, and rotating plate 26 are as described above. 【0032】 The boat support portion 27 has a cylindrical shape. The boat support portion 27 is provided between the rotating plate 26 and the boat 16. The boat support portion 27 supports the boat 16 from below on the rotating plate 26. The lower end of the boat support portion 27 may be connected to the upper surface of the rotating plate 26. The upper end of the boat support portion 27 may be connected to the lower surface of the boat 16. 【0033】 The thermal insulation structure 60 includes a first plate 61, a second plate 62, a third plate 63, and a support column 64. 【0034】 The first plate 61 has a disc shape. The first plate 61 is made of quartz. The first plate 61 includes a supply port 61a and an annular channel 61b. 【0035】 The supply port 61a is located at a position away from the center of the first plate 61 in a plan view. The supply channel 64a, which will be described later, is connected to the supply port 61a. Inert gas is supplied to the supply port 61a from the inert gas supply unit 70 via the supply channel 64a. 【0036】 The annular channel 61b has an annular shape when viewed from above. The annular channel 61b communicates with the supply port 61a. Inert gas supplied from the supply port 61a flows through the annular channel 61b. 【0037】 The first plate 61 has a communication hole that connects the annular channel 61b to the outer circumferential surface 61c of the first plate 61. As a result, the inert gas flowing through the annular channel 61b is discharged into the processing container 10 from the outer circumferential surface 61c of the first plate 61 through the communication hole. The first plate 61 also has a communication hole that connects the annular channel 61b to the inner circumferential surface 61d of the first plate 61. As a result, the inert gas flowing through the annular channel 61b is discharged into the processing container 10 from the inner circumferential surface 61d of the first plate 61 through the communication hole. The communication hole is formed, for example, by the connection of multiple pores contained in quartz. The first plate 61 is made of, for example, high-porosity quartz. High-porosity quartz has high reflectivity and low thermal conductivity. Therefore, heat dissipation by thermal radiation and heat dissipation by thermal conduction can be reduced. The porosity of high-porosity quartz is preferably 20% or higher, and more preferably 50% or higher. An example of high-porosity quartz is quartz with a pore size of 200 μm, a porosity of 80%, a reflectance of 0.9, and a thermal conductivity of 0.11 W / m·K. 【0038】 The second plate 62 has a disc shape with approximately the same outer diameter as the first plate 61. The second plate 62 is made of quartz. The second plate 62 covers the lower surface of the first plate 61. The second plate 62 is in contact with the lower surface of the first plate 61. The second plate 62 may be fused to the lower surface of the first plate 61. The porosity of the second plate 62 may be lower than that of the first plate 61. Quartz with low porosity has high etching resistance to cleaning gas. Therefore, the second plate 62 prevents the lower surface of the first plate 61 from being etched by the cleaning gas. As a result, the generation of particles caused by etching of the first plate 61 can be prevented. The second plate 62 is made of, for example, transparent quartz. Transparent quartz has low porosity and high etching resistance to cleaning gas. 【0039】 The third plate 63 has a disc shape with approximately the same outer diameter as the first plate 61. The third plate 63 is made of quartz. The third plate 63 covers the upper surface of the first plate 61. The third plate 63 is in contact with the upper surface of the first plate 61. The third plate 63 may be fused to the upper surface of the first plate 61. The porosity of the third plate 63 may be lower than that of the first plate 61. Quartz with low porosity has high etching resistance to cleaning gas. Therefore, the third plate 63 prevents the upper surface of the first plate 61 from being etched by the cleaning gas. As a result, the generation of particles caused by etching of the first plate 61 can be prevented. The third plate 63 is made of, for example, transparent quartz. Transparent quartz has low porosity and high etching resistance to cleaning gas. The third plate 63 is made of, for example, the same material as the second plate 62. 【0040】 The first plate 61, the second plate 62, and the third plate 63 are arranged such that the second plate 62 and the third plate 63 sandwich the first plate 61 in the thickness direction. This forms a laminate 65. The laminate 65 is provided with a through hole 65h that penetrates in the thickness direction. The through hole 65h is located at the center of the laminate 65 in a plan view. The boat support portion 27 penetrates the through hole 65h in the thickness direction of the laminate 65. 【0041】 The support column 64 has a cylindrical shape. The support column 64 is connected to the lower surface of the laminate 65 by penetrating the lid 21 from below the lid 21. The support column 64 supports the laminate 65 from below. Multiple support columns 64 may be provided along the circumferential direction of the laminate 65. The support column 64 has a supply channel 64a inside. The supply channel 64a communicates with the annular channel 61b via a supply port 61a. The supply channel 64a supplies inert gas supplied from the inert gas supply unit 70 to the annular channel 61b. 【0042】 The inert gas supply unit 70 supplies inert gas to the supply channel 64a. The inert gas from the inert gas supply unit 70 flows from bottom to top through the supply channel 64a as indicated by arrow F1 and flows into the annular channel 61b. The inert gas that has flowed into the annular channel 61b flows along the annular channel 61b as indicated by arrow F2 and is discharged into the processing container 10 from the outer circumferential surface 61c of the first plate 61 through the communication holes in the first plate 61 as indicated by arrow F3. The inert gas that has flowed into the annular channel 61b flows along the annular channel 61b as indicated by arrow F2 and is discharged into the processing container 10 from the inner circumferential surface 61d of the first plate 61 through the communication holes in the first plate 61 as indicated by arrow F4. By flowing the inert gas through the communication holes in the first plate 61, heat dissipation due to heat conduction from top to bottom of the laminate 65 can be reduced. The inert gas is, for example, nitrogen gas. The inert gas may be a noble gas such as helium or argon. The inert gas supply unit 70 may include a valve, a mass flow controller, etc. 【0043】 The inert gas supply unit 70, under the control of the control unit 90, supplies and stops the inert gas, adjusts the flow rate of the inert gas, and performs other functions. 【0044】 For example, the inert gas supply unit 70 supplies inert gas to the supply channel 64a when cleaning the inside of the processing container 10. In this case, the inert gas discharged from the outer surface 61c and inner surface 61d of the first plate 61 reduces the exposure of the outer surface 61c and inner surface 61d of the first plate 61 to the cleaning gas. Therefore, etching of the outer surface 61c and inner surface 61d of the first plate 61 by the cleaning gas can be reduced. 【0045】 For example, the inert gas supply unit 70 supplies inert gas to the supply channel 64a when a film is formed on the substrate W in the processing container 10. In this case, the inert gas discharged from the outer surface 61c and inner surface 61d of the first plate 61 reduces the exposure of the outer surface 61c and inner surface 61d of the first plate 61 to the film-forming gas. Therefore, the accumulation of film-forming gas on the outer surface 61c and inner surface 61d of the first plate 61 can be reduced. 【0046】 For example, the inert gas supply unit 70 supplies inert gas to the supply channel 64a when purging the inside of the processing container 10. In this case, since the inert gas can be supplied into the processing container 10 at a large flow rate and low flow velocity, the stirring up of particles can be reduced. 【0047】 For example, the inert gas supply unit 70 supplies inert gas to the supply channel 64a when restoring the pressure inside the processing container 10 to atmospheric pressure. In this case, since the inert gas can be supplied into the processing container 10 at a large flow rate and low flow velocity, the stirring up of particles can be reduced. 【0048】 [Variations of boat support structure] Referring to Figures 6 to 8, a modified boat support structure 2A will be described. Figure 6 is a vertical cross-sectional view showing the modified boat support structure 2A. Figure 7 is a vertical cross-sectional view showing the thermal insulation structure 160 of Figure 6. Figure 8 is a horizontal cross-sectional view showing the thermal insulation structure 160 of Figure 6. Figure 8 corresponds to a cross-sectional view along line VIII-VIII in Figure 7. In Figures 7 and 8, arrows F5 and F6 indicate the flow of inert gas. 【0049】 The boat support structure 2A includes a cover 21, a sealing member 22, a magnetic fluid seal 23, a rotating shaft 24, a lifting mechanism 25, a rotating plate 26, a boat support section 127, a heat insulating structure 160, and an inert gas supply section 170. The cover 21, sealing member 22, magnetic fluid seal 23, rotating shaft 24, lifting mechanism 25, and rotating plate 26 are as described above. 【0050】 The boat support portion 127 has a cylindrical shape. The boat support portion 127 is provided between the rotating plate 26 and the boat 16. The boat support portion 127 supports the boat 16 from below on the rotating plate 26. The lower end of the boat support portion 127 may be connected to the upper surface of the rotating plate 26. The upper end of the boat support portion 127 may be connected to a top plate that supports the lower surface of the boat 16. Multiple boat support portions 127 may be provided on the outer circumference of the rotating plate 26, along the circumferential direction of the rotating plate 26. 【0051】 The thermal insulation structure 160 includes a first plate 161, a second plate 162, a third plate 163, and a support column 164. 【0052】 The first plate 161 has a disc shape. The first plate 161 is made of quartz. The first plate 161 includes a supply port 161a. 【0053】 The supply port 161a is located at the center of the first plate 161 in a plan view. The supply channel 164a, which will be described later, is connected to the supply port 161a. Inert gas is supplied to the supply port 161a from the inert gas supply unit 170 via the supply channel 164a. 【0054】 The first plate 161 has a communication hole that connects from the supply port 161a to the outer circumferential surface 161c of the first plate 161. As a result, the inert gas supplied to the supply port 161a is discharged into the processing container 10 from the outer circumferential surface 161c of the first plate 161 through the communication hole. The communication hole is formed, for example, by the connection of multiple pores contained in quartz. The first plate 161 is formed from, for example, the same material as the first plate 61. 【0055】 The second plate 162 and the third plate 163 may have the same configuration as the second plate 62 and the third plate 63, respectively. 【0056】 The first plate 161, the second plate 162, and the third plate 163 are arranged such that the second plate 162 and the third plate 163 sandwich the first plate 161 in the thickness direction. This forms the laminate 165. 【0057】 The support column 164 has a cylindrical shape. The support column 164 is connected to the lower surface of the laminate 165 by penetrating the lid 21 from below the lid 21. The support column 164 supports the laminate 165 from below. In a plan view, the support column 164 is located at the center of the laminate 165. The support column 164 has a supply channel 164a inside. The supply channel 164a communicates with the supply port 161a. The supply channel 164a supplies inert gas supplied from the inert gas supply unit 170 to the supply port 161a. 【0058】 The inert gas supply unit 170 supplies inert gas to the supply channel 164a. The inert gas from the inert gas supply unit 170 flows from bottom to top through the supply channel 164a as shown by arrow F5 and is supplied to the supply port 161a. The inert gas supplied to the supply port 161a is discharged into the processing container 10 from the outer circumferential surface 161c of the first plate 161 through the communication holes in the first plate 161 as shown by arrow F6. By flowing the inert gas through the communication holes in the first plate 161, heat dissipation due to heat conduction from top to bottom of the laminate 165 can be reduced. The inert gas is, for example, nitrogen gas. The inert gas may also be a noble gas such as helium gas or argon gas. The inert gas supply unit 170 may include a valve, a mass flow controller, etc. 【0059】 The inert gas supply unit 170, under the control of the control unit 90, supplies and stops the inert gas, adjusts the flow rate of the inert gas, and performs other functions. 【0060】 For example, the inert gas supply unit 170 supplies inert gas to the supply channel 164a when cleaning the inside of the processing container 10. In this case, the inert gas discharged from the outer surface 161c of the first plate 161 reduces the exposure of the outer surface 161c of the first plate 161 to the cleaning gas. Therefore, etching of the outer surface 161c of the first plate 161 by the cleaning gas can be reduced. 【0061】 For example, the inert gas supply unit 170 supplies inert gas to the supply channel 164a when a film is formed on the substrate W in the processing container 10. In this case, the inert gas discharged from the outer surface 161c of the first plate 161 reduces the exposure of the outer surface 161c of the first plate 161 to the film-forming gas. Therefore, the accumulation of film-forming gas on the outer surface 161c of the first plate 161 can be reduced. 【0062】 For example, the inert gas supply unit 170 supplies inert gas to the supply channel 164a when purging the inside of the processing container 10. In this case, since the inert gas can be supplied into the processing container 10 at a large flow rate and low flow velocity, the stirring up of particles can be reduced. 【0063】 For example, the inert gas supply unit 170 supplies inert gas to the supply channel 164a when restoring the pressure inside the processing container 10 to atmospheric pressure. In this case, since the inert gas can be supplied into the processing container 10 at a large flow rate and low flow velocity, the stirring up of particles can be reduced. 【0064】 The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols] 【0065】 1 Heat treatment apparatus 10 Processing containers 10a opening 21 Lid 50 Heater 60, 160 Insulated structure 61, 161 First plate 61a and 161a supply ports 62, 162, Second Plate 63, 163, third plate

Claims

[Claim 1] A processing container having an opening at its lower end, A lid for opening and closing the opening of the processing container, A heater is provided around the processing container, An insulating structure provided on the lid, Equipped with, The aforementioned heat insulating structure comprises a first plate, and a second plate and a third plate provided so as to sandwich the first plate in the thickness direction. The first plate, the second plate, and the third plate are flat plates made of quartz. The first plate includes a supply port for supplying inert gas and a communication hole that extends from the supply port to the outer surface. Heat treatment equipment. [Claim 2] The supply port is provided at a position away from the center of the first plate in a plan view. The heat treatment apparatus according to claim 1. [Claim 3] The first plate body includes an annular channel that communicates with the supply port and through which the inert gas flows, The heat treatment apparatus according to claim 2. [Claim 4] The supply port is located at the center of the first plate in a plan view. The heat treatment apparatus according to claim 1. [Claim 5] The first plate is formed of high-porosity quartz, The second plate and the third plate are formed of transparent quartz. The heat treatment apparatus according to claim 1. [Claim 6] The porosity of the first plate is 20% or more. The heat treatment apparatus according to claim 1. [Claim 7] The system includes an inert gas supply unit that supplies the inert gas to the supply port. The heat treatment apparatus according to any one of claims 1 to 6. [Claim 8] The inert gas supply unit supplies the inert gas to the supply port when cleaning the inside of the processing container. The heat treatment apparatus according to claim 7. [Claim 9] The inert gas supply unit supplies the inert gas to the supply port when a film is formed on the substrate in the processing container. The heat treatment apparatus according to claim 7. [Claim 10] The inert gas supply unit supplies the inert gas to the supply port when purging the inside of the processing container. The heat treatment apparatus according to claim 7. [Claim 11] The inert gas supply unit supplies the inert gas to the supply port when restoring the pressure inside the processing container to atmospheric pressure. The heat treatment apparatus according to claim 7. [Claim 12] A processing container having an opening at its lower end, A lid for opening and closing the opening of the processing container, A heater is provided around the processing container, An insulating structure provided on the aforementioned lid, A heat treatment method performed in a heat treatment apparatus equipped with, The aforementioned heat insulating structure comprises a first plate, and a second plate and a third plate provided so as to sandwich the first plate in the thickness direction. The first plate, the second plate, and the third plate are flat plates made of quartz. The first plate includes a supply port for supplying inert gas and a communication hole that extends from the supply port to the outer surface. The heat treatment method comprises supplying the inert gas to the supply port. Heat treatment method. [Claim 13] The process involves supplying the inert gas to the supply port when cleaning the inside of the processing container. The heat treatment method according to claim 12. [Claim 14] The process involves supplying the inert gas to the supply port when forming a film on a substrate in the processing container. The heat treatment method according to claim 12. [Claim 15] The process involves supplying the inert gas to the supply port when purging the inside of the processing container. The heat treatment method according to any one of claims 12 to 14. [Claim 16] The process involves supplying the inert gas to the supply port when returning the pressure inside the processing container to atmospheric pressure. The heat treatment method according to any one of claims 12 to 14.

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