Display device

Abstract

To provide a high-definition display device, and to reduce the manufacturing cost a display device using a micro LED as display element.SOLUTION: The display device comprises a substrate, a plurality of transistors, and a plurality of light-emitting diodes. The plurality of light-emitting diodes is provided on the substrate in matrix. Each of the plurality of transistors is electrically connected to at least one of the plurality of light-emitting diodes. The plurality of light-emitting diodes is located closer to the substrate than to the plurality of transistors. The plurality of light-emitting diodes emits light opposite the substrate.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a display device, a display module, an electronic device, and a manufacturing method thereof. do.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the semiconductor device include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, Input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), These driving methods or manufacturing methods can be given as examples. [Background technology]

[0003] In recent years, micro light emitting diodes (micro LEDs) Display devices using a liquid crystal display (LCD) as a display element have been proposed (see, for example, Patent Document 1). Display devices that use LEDs as display elements have the advantages of high brightness, high contrast, and long life. Research and development into this field is currently underway as a next-generation display device. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] US Patent Application Publication No. 2014 / 0367705 Summary of the Invention [Problem to be solved by the invention]

[0005] Display devices that use micro LEDs as display elements take an extremely long time to mount LED chips. For example, the pick-and-place method Let's create red (R), green (G), and blue (B) LEDs on different wafers. In this case, the LEDs are cut out one by one and mounted on a circuit board. The smaller the size, the more LEDs need to be mounted, and the longer it takes to mount them. The finer the pattern, the more difficult it is to implement the LED.

[0006] An object of one embodiment of the present invention is to provide a display device with high definition. An object of one embodiment of the present invention is to provide a display device with high display quality. One object is to reduce the thickness and weight of a display device.

[0007] One aspect of the present invention is to reduce the manufacturing cost of a display device using a micro LED as a display element. One aspect of the present invention is to provide a method for manufacturing a display device using micro LEDs with high yield. An object of the present invention is to manufacture a display device used for the LCD panel.

[0008] Note that the description of these problems does not preclude the existence of other problems. However, it is not necessary to solve all of these problems. It is possible to extract other issues from the description in the section. [Means for solving the problem]

[0009] A display device according to one embodiment of the present invention includes a substrate, a plurality of transistors, and a plurality of light-emitting diodes. The light emitting diodes are arranged in a matrix on the substrate. Each of the transistors is electrically connected to at least one of the plurality of light emitting diodes. The light emitting diodes are located closer to the substrate than the transistors. The electrode emits light on the side opposite the substrate.

[0010] At least one of the plurality of light emitting diodes is preferably a micro light emitting diode. stomach.

[0011] At least one of the plurality of transistors has a metal oxide in a channel formation region. preferable.

[0012] The plurality of light emitting diodes include a first light emitting diode and a second light emitting diode which emit light of different colors. Preferably, the light emitting diode is a light emitting diode emitting white light. It is preferable to present

[0013] At least one of the plurality of transistors preferably has a semiconductor layer that transmits visible light. The semiconductor layer has a channel formation region and a pair of low resistance regions. The resistance of the low-resistance region is lower than that of the channel region. The light passes through at least one of the two regions and is emitted toward the substrate.

[0014] One aspect of the present invention is a display device having the above-described configuration, flexible printed circuit (hereinafter referred to as FPC) or TCP Modules with connectors such as Tape Carrier Package or COG (Chip On Glass) or COF (Chip On Modules that incorporate integrated circuits (ICs) using the MOS film method, etc. do.

[0015] One aspect of the present invention is a combination of the above module, an antenna, a battery, a housing, a camera, and a speaker. , a microphone, and an operation button.

[0016] In one embodiment of the present invention, a plurality of transistors are formed in a matrix over a first substrate, and A plurality of light emitting diodes are formed in a matrix on the first substrate or the second substrate. On the substrate, at least one of the plurality of transistors and at least one of the plurality of light emitting diodes are A first conductor is formed to electrically connect to another one of the transistors. At least one of the plurality of light emitting diodes is electrically connected to at least one of the plurality of resistors. In this method, a first substrate and a second substrate are bonded to each other so that the first substrate and the second substrate are aligned in a direction perpendicular to the substrate.

[0017] By forming a first conductor on a first substrate, the first conductor and a small number of transistors are formed. and electrically connecting at least one of the plurality of light emitting diodes to at least one of the first and second substrates. A second conductor is formed to electrically connect to the first conductor, and the first conductor and the second conductor are connected to each other. It is preferable to bond the first substrate and the second substrate together so that the first substrate and the second substrate are aligned in a direction perpendicular to the optical axis.

[0018] After the first substrate and the second substrate are bonded together, the first substrate may be peeled off.

[0019] In one embodiment of the present invention, a release layer is formed over a first substrate, an insulating layer is formed over the release layer, A part of the edge layer is opened, a plurality of transistors are formed in a matrix on the insulating layer, and a peeling layer is A conductive layer is formed on the insulating layer so as to overlap the openings of the insulating layer, and the transistors are sealed. The first substrate is peeled off using a release layer to expose the conductive layer from the release layer side, and a plurality of layers are formed on the second substrate. A number of light emitting diodes are formed in a matrix, and a small number of transistors are connected to the light emitting diodes via a conductive layer. at least one of the light emitting diodes is electrically connected to at least one of the light emitting diodes; A plurality of transistors are transferred onto a second substrate, and a conductive layer is formed on at least one of the plurality of transistors. or electrically connects to the source of at least one of the plurality of transistors. The present invention relates to a method for manufacturing a display device in which a transistor functions as a drain.

[0020] In one embodiment of the present invention, a release layer is formed over a first substrate, an insulating layer is formed over the release layer, A part of the edge layer is opened, and a plurality of transistors are formed in a matrix on the insulating layer. The transistors are sealed, and the semiconductor layers of the transistors each have a channel forming region. and a pair of low resistance regions. The channel formation region is formed on the insulating layer. One of the resistor regions is formed on the release layer so as to overlap the opening in the insulating layer, and the release layer is used to form a first insulating layer. The first substrate is peeled off, and one of the pair of low resistance regions is exposed from the peeling layer side, and then the second substrate is provided with: A plurality of light emitting diodes are formed in a matrix, and a plurality of light emitting diodes are connected to each other through one of a pair of low resistance regions. At least one of the transistors and at least one of the light emitting diodes are electrically connected to each other. A method for manufacturing a display device, comprising transferring a plurality of transistors onto a second substrate so as to be connected to the display device. It is. Effect of the Invention

[0021] According to one embodiment of the present invention, a display device with high resolution can be provided. According to one embodiment of the present invention, a display device having high display quality can be provided. It becomes possible to

[0022] According to one embodiment of the present invention, the manufacturing cost of a display device using a micro LED as a display element can be reduced. According to one embodiment of the present invention, a display device using micro LEDs as a display element can be manufactured with high yield. It is possible to manufacture display devices.

[0023] The description of these effects does not preclude the existence of other effects. However, it is not necessary to have all of these effects. However, it is possible to extract effects other than these. [Brief description of the drawings]

[0024] [Figure 1] Fig. 1A is a cross-sectional view illustrating a configuration example of a display device, Fig. 1B is a cross-sectional view illustrating a configuration example of an LED substrate, Fig. 1C is a cross-sectional view illustrating a configuration example of a circuit substrate. [Diagram 2] Fig. 2(A) is a cross-sectional view illustrating a configuration example of a display device, Fig. 2(B), Fig. 2(C), and Fig. 2(D) are cross-sectional views illustrating an example of a method for manufacturing a display device. [Diagram 3] Fig. 3(A) is a cross-sectional view illustrating a configuration example of a display device, Fig. 3(B) is a cross-sectional view illustrating a configuration example of an LED substrate, and Fig. 3(C) is a cross-sectional view illustrating a configuration example of a circuit substrate. [Figure 4] Fig. 4(A) is a cross-sectional view illustrating a configuration example of a display device, Fig. 4(B) is a cross-sectional view illustrating a configuration example of an LED substrate. [Diagram 5] 5(A) and 5(B) are cross-sectional views illustrating an example of a method for manufacturing a circuit array. [Figure 6] 1 is a cross-sectional view illustrating a configuration example of a display device. [Figure 7] 1 is a cross-sectional view illustrating a configuration example of a display device. [Figure 8] 8A and 8B are cross-sectional views illustrating an example of a transistor. [Figure 9] 9(A) to 9(D) are diagrams showing examples of electronic devices. [Figure 10] 10(A) to 10(E) are diagrams showing examples of electronic devices. [Figure 11] 11(A) to 11(F) are diagrams showing examples of electronic devices. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the above-mentioned invention can be obtained by the following embodiments. It should not be construed as being limited to the contents described.

[0026] In the configuration of the invention described below, the same parts or parts having similar functions are referred to as the same parts. The same reference numerals are used in common among different drawings, and the repeated explanations are omitted. When referring to a function, the same hatch pattern may be used and no particular reference number may be given.

[0027] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in the actual embodiment, in order to facilitate understanding. Therefore, the disclosed invention may not necessarily represent the position, size, range, etc. Furthermore, the present invention is not limited to the position, size, range, etc. disclosed in the drawings.

[0028] The words "film" and "layer" may be interchangeable depending on the circumstances. For example, the term "conductive layer" can be replaced with "conductive film" Alternatively, for example, the term "insulating film" can be changed to " The term "insulating layer" may be changed to "insulating layer."

[0029] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0030] [Display device overview] The display device of the present embodiment includes a light-emitting diode as a display element and a transistor for driving the display element. The light emitting diodes are arranged in a matrix on the substrate. Each of the plurality of transistors is connected to at least one of the plurality of light emitting diodes. The light emitting diodes are electrically connected to the substrate side of the transistors. The light emitting diodes emit light on the opposite side to the substrate.

[0031] The display device of this embodiment has a plurality of transistors and a plurality of It is formed by bonding a light emitting diode and

[0032] In the method for manufacturing a display device of this embodiment mode, a plurality of light-emitting diodes and a plurality of transistors are This is useful when manufacturing displays with many pixels or high resolution displays. Even so, the manufacturing cost of display devices is much cheaper than mounting LEDs one by one on a circuit board. This can reduce time and manufacturing difficulty.

[0033] The display device of this embodiment has a function of displaying an image using light emitting diodes. In the embodiment, in particular, an example in which a micro LED is used as a light emitting diode is described. In this embodiment, a micro LED having a double heterojunction is described. However, the light-emitting diode is not particularly limited, and for example, a multi-layer light-emitting diode having a quantum well junction is also usable. Micro LEDs, LEDs using nano columns, etc. may also be used.

[0034] By using micro LEDs as display elements, it is possible to reduce the power consumption of display devices. It is also possible to make the display device thinner and lighter. Display devices using D have high contrast and a wide viewing angle, which makes it possible to improve display quality. can.

[0035] The area of ​​the light-emitting diode that emits light is 1 mm 2 Less than 10000μm is preferable. 2 Less than 3000μm is more preferable. 2 Less than 700μm is more preferable. 2 The following is further In this specification, the area of ​​the light emitting region is preferably 10,000 μm 2 below Light-emitting diodes such as these are sometimes referred to as micro LEDs.

[0036] It is preferable that a transistor included in the display device has a metal oxide in a channel formation region. A transistor using a metal oxide can consume less power. By combining it with micro LEDs, it will be possible to realize a display device with extremely low power consumption. It is possible.

[0037] [Display device configuration example A] FIG. 1A shows a cross-sectional view of a display device 380A.

[0038] The display device 380A is configured by bonding a circuit board 360A and an LED board 370A together. It has been made.

[0039] FIG. 1B shows a cross-sectional view of the LED substrate 370A.

[0040] The LED board 370A includes a board 371, a light-emitting diode 302a, and a light-emitting diode 302b. , the conductor 117a, the conductor 117b, the conductor 117c, the conductor 117d, and the protective layer 3 Has 73.

[0041] The light emitting diode 302a includes an electrode 112a, a semiconductor layer 113a, a light emitting layer 114a, a semiconductor The light emitting diode 302b has an electrode 112b, a semiconductor layer 115a, and an electrode 116a. It includes a conductor layer 113b, a light emitting layer 114b, a semiconductor layer 115b, and an electrode 116b.

[0042] The electrode 112a is electrically connected to the semiconductor layer 113a and the conductor 117b. The electrode 112b is electrically connected to the semiconductor layer 115a and the conductor 117a. The electrode 116b is electrically connected to the semiconductor layer 113b and the conductor 117d. The conductor layer 115b and the conductor 117c are electrically connected to each other. 1, electrodes 112a, 112b, semiconductor layers 113a, 113b, light-emitting layers 114a, 114b , which is provided to cover the semiconductor layers 115a, 115b and the electrodes 116a, 116b. The protective layer 373 covers the side surfaces of the conductors 117a to 117d. The conductive members 117a to 117d have openings that overlap with the upper surfaces of the conductive members 117a to 117d. The surface is exposed.

[0043] The light emitting layer 114a is sandwiched between the semiconductor layer 113a and the semiconductor layer 115a. The light emitting layer 114a is sandwiched between the semiconductor layer 113b and the semiconductor layer 115b. In the semiconductor layer 114b, electrons and holes combine to emit light. One of the layers 115a and 115b is an n-type semiconductor layer, and the other is a p-type semiconductor layer. A stacked structure including a semiconductor layer 113a, a light emitting layer 114a, and a semiconductor layer 115a, The stacked structures including the semiconductor layer 113b, the light emitting layer 114b, and the semiconductor layer 115b are The two layers are laminated together to produce red, yellow, green, or blue light. These laminated structures preferably have different colored lights. Gallium compounds, gallium arsenide, gallium aluminum arsenide, aluminum Gallium indium phosphide, gallium nitride, indium gallium nitride compounds As described above, the semiconductor layer 113a, the emitting layer, the selenium-zinc compound, etc. can be used. The laminated structure including the optical layer 114a and the semiconductor layer 115a is red, yellow, green, or blue. A process to form a colored film such as a color filter by forming the film to show a specific light. This makes it possible to reduce the manufacturing cost of the display device. The laminated structure may emit light of the same color. The emitted light may be extracted to the outside of the display device via the colored film.

[0044] The substrate 371 may be, for example, a sapphire (Al2O3) substrate or a silicon carbide (SiC) substrate. Use single crystal substrates such as silicon (Si) substrates and gallium nitride (GaN) substrates. can be done.

[0045] FIG. 1C shows a cross-sectional view of the circuit board 360A.

[0046] The circuit board 360A includes a substrate 361, an insulating layer 367, a transistor 303a, a transistor 303b, an insulating layer 314, a conductive layer 111a, a conductive layer 111b, a conductive layer 111c, and a conductive The insulating layer 111d is provided.

[0047] The transistors 303a and 303b each include a gate, a gate insulating layer 311, a semiconductor layer The gate (lower gate) and the semiconductor layer are The back gate (upper gate) and the semiconductor layer are overlapped with each other through a gate insulating layer 311. The insulating layer 313 is disposed between the insulating layer 312 and the insulating layer 313. The semiconductor layer may include an oxide semiconductor. preferable.

[0048] At least one of the insulating layers 312, 313, and 314 is impregnated with water or It is preferable to use a material that is difficult for impurities such as hydrogen to diffuse into. This effectively suppresses diffusion of the photoresist into the transistor, thereby improving the reliability of the display device. The insulating layer 314 functions as a planarization layer.

[0049] The insulating layer 367 functions as a base film. It is preferable to use a material in which impurities are less likely to diffuse.

[0050] As shown in FIG. 1A, the conductor 117a provided on the LED substrate 370A is a 360A. This connects the transistor 30 The electrode 116a can electrically connect the light emitting diode 302a to the light emitting diode 302a. It functions as a pixel electrode of the photodiode 302a. The conductor 117b is connected to a conductive layer 111b provided on the circuit board 360A. The electrode 112a functions as a common electrode for the light-emitting diode 302a.

[0051] Similarly, the conductor 117c provided on the LED board 370A is This connects the transistor 303b and the light-emitting diode 111c. The electrode 116b can be electrically connected to the light-emitting diode 302b. 2b. The conductor 117d provided on the LED substrate 370A functions as a pixel electrode. The electrode 112b is connected to a conductive layer 111d provided on the circuit board 360A. serves as a common electrode for the light-emitting diode 302b.

[0052] The light emitted by the light emitting diodes 302a and 302b is extracted to the substrate 361 side. 61, an insulating layer 367, a gate insulating layer 311, insulating layers 312, 313, 314, and a protective layer 373 each transmits the light.

[0053] In this embodiment, an example is shown in which light from the light emitting diode is extracted to the side opposite to the substrate 371. However, if the substrate 371 transmits visible light, the light may be extracted on the substrate 371 side. In addition, a reflective layer that reflects the light from the light-emitting diode is provided on the side from which the light is not extracted. Alternatively, a light-shielding layer for blocking the light may be provided.

[0054] The conductors 117a to 117d are made of, for example, conductive paste such as silver, carbon, or copper, or gold. In addition, the conductors 117a to 117d and the bumps made of solder or the like can be preferably used. The electrodes 112a, 112b, 116a, 116b and the conductive layers 111a to 111 For the conductors 117a to 117d, a conductive material having a low contact resistance with the conductors 117a to 117d is used. For example, when silver paste is used for the conductors 117a to 117d, The conductive materials that connect them are aluminum, titanium, copper, silver (Ag) and palladium (Pd ) and copper (Cu) alloy (Ag-Pd-Cu (APC)), the contact resistance is Low and preferable.

[0055] The conductors 117a to 117d are provided on the circuit board 360A, not on the LED board 370A. It may be possible to use

[0056] [Display device configuration example B] The display device 380B shown in FIG. 2A does not have the substrate 361, but has a flexible substrate 362. The display device 380 differs from the display device 380A in that it has an adhesive layer 363.

[0057] By forming transistors on a heat-resistant substrate such as a glass substrate, the electrical characteristics and A highly reliable transistor can be formed. By peeling the film and transferring it to a flexible substrate, the display device can be made thinner and Weight reduction can be achieved.

[0058] A method for manufacturing the display device 380B will be described with reference to FIGS. 2(B) to 2(D).

[0059] As shown in FIG. 2B, a peeling layer 353 is formed on a substrate 351, and an insulating film is formed on the peeling layer 353. Then, the transistor 303a and the insulating layer 314 are formed on the insulating layer 367. Thus, the conductive layers 111a and 111b are formed. This forms the circuit board 360B. can be done.

[0060] Next, as shown in FIG. 2(C), the circuit board 360B and the LED board 370A are bonded together. To mix.

[0061] Then, as shown in FIG. 2(D), the substrate 351 is peeled off using the peeling layer 353. Thereafter, a flexible substrate 362 is attached to the exposed insulating layer 367 using an adhesive layer 363. By combining these, the display device 380B shown in FIG. 2A can be manufactured.

[0062] The substrate 351 has a rigidity sufficient to facilitate easy transportation and is resistant to the temperatures involved in the manufacturing process. The substrate 351 has heat resistance. Examples of materials that can be used for the substrate 351 include glass and quartz. , ceramic, sapphire, resin, semiconductor, metal or alloy. Examples of such glass include non-alkali glass, barium borosilicate glass, and aluminoborosilicate glass. Russ et al.

[0063] The release layer 353 can be formed using an organic material or an inorganic material.

[0064] Examples of organic materials that can be used for the peeling layer 353 include polyimide resin and acrylic resin. resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzene resin Examples of the resin include cyclobutene resins and phenol resins.

[0065] Inorganic materials that can be used for the peeling layer 353 include tungsten, molybdenum, titanium, and the like. Tantalum, Niobium, Nickel, Cobalt, Zirconium, Zinc, Ruthenium, Rhodium a metal containing an element selected from the group consisting of ruthenium, palladium, osmium, iridium, and silicon; The crystal structure of the silicon-containing layer may be an alloy containing the element, or a compound containing the element. The structure may be amorphous, microcrystalline, or polycrystalline.

[0066] The substrate 351 may be peeled off by irradiating the peeling interface with a laser. For example, a diode-pumped solid-state laser can be used. Alternatively, a tensile force is applied vertically to the substrate. 351 may be peeled off.

[0067] Depending on the combination of materials of the substrate 351, the release layer 353, and the insulating layer 367, For example, the interface between the substrate 351 and the release layer 353, the inside of the release layer 353, the release layer 353, the The interface between the release layer 353 and the insulating layer 367, for example, becomes the peeled interface.

[0068] [Display device configuration example C] FIG. 3A shows a cross-sectional view of a display device 380C.

[0069] The display device 380C is configured by bonding a circuit board 360C and an LED board 370B together. In the display device 380C, two light emitting diodes are connected to one transistor. In this way, multiple light-emitting diodes are connected to one transistor. They may be electrically connected.

[0070] FIG. 3B shows a cross-sectional view of the LED substrate 370B.

[0071] The LED board 370B includes a board 371, a light-emitting diode 302c, and a light-emitting diode 302d. , a conductor 117a, a conductor 117b, a conductor 117c, and a protective layer 373.

[0072] The light emitting diodes 302c and 302d have the same configuration. The organic layer 113 , the light emitting layer 114 , the semiconductor layer 115 , and the electrode 116 .

[0073] The electrode 112 is electrically connected to the semiconductor layer 113 and the conductor 117c. The protective layer is electrically connected to the semiconductor layer 115 and the conductor 117a or 117b. 373 is a substrate 371, an electrode 112, a semiconductor layer 113, a light-emitting layer 114, a semiconductor layer 115, The protective layer 373 is provided to cover the conductors 117a to 117c. The openings cover the side surfaces of the conductors 117a to 117c and overlap the upper surfaces of the conductors 117a to 117c. 1, the upper surfaces of the conductors 117a to 117c are exposed.

[0074] The light emitting layer 114 is a light emitting layer, and one of the semiconductor layers 113 and 115 is an n-type The light emitting diodes 302c and 302d are: They are formed to emit light of the same color.

[0075] FIG. 3C shows a cross-sectional view of a circuit board 360C.

[0076] The circuit board 360C includes a substrate 361, an insulating layer 367, a transistor 303a, and an insulating layer 314. , a conductive layer 111a, and a conductive layer 111b.

[0077] As shown in FIG. 3A, the conductors 117a and 117b provided on the LED substrate 370B are 3, and is connected to a conductive layer 111a provided on the circuit board 360C. The resistor 303a and the light emitting diodes 302c and 302d can be electrically connected to each other. The electrode 116 functions as a pixel electrode for the light-emitting diodes 302a and 302b. A conductor 117c provided on the LED board 370B and a conductor 117b provided on the circuit board 360C The electrode 112 is connected to the layer 111b of the light emitting diodes 302c and 302d. In the LED substrate 370A (FIG. 1(B)), the common electrode is As shown in the LED board 370B, a plurality of light-emitting diodes are provided for each LED. A common electrode (electrode 112) may be provided across the field.

[0078] [Display device configuration examples D, E, F] FIG. 4A shows a cross-sectional view of a display device 380D.

[0079] The display device 380D is formed by bonding a circuit array 360D and an LED substrate 370C together. As described later, the circuit array 360D is formed on a substrate via a release layer. Then, the surface of the circuit array 360D exposed by peeling off the substrate is It is bonded to substrate 370C.

[0080] FIG. 4B shows a cross-sectional view of the LED substrate 370C.

[0081] The LED board 370C includes a board 371, a light-emitting diode 302e, and a light-emitting diode 302f. , a conductor 117a, a conductor 117b, a conductor 117c, and a protective layer 373.

[0082] The light-emitting diode 302e includes an electrode 112, a semiconductor layer 113a, a light-emitting layer 114a, and a semiconductor layer The light emitting diode 302f has an electrode 112, a semiconductor The pixel electrode 110 includes a layer 113b, a light-emitting layer 114b, a semiconductor layer 115b, and an electrode 116b.

[0083] The electrode 112 is electrically connected to the semiconductor layers 113a and 113b and the conductor 117c. The electrode 116a is electrically connected to the semiconductor layer 115a and the conductor 117a. The electrode 116b is electrically connected to the semiconductor layer 115b and the conductor 117c. 373 is a substrate 371, an electrode 112, semiconductor layers 113a and 113b, a light-emitting layer 114a, 14b, the semiconductor layers 115a and 115b, and the electrodes 116a and 116b. The protective layer 373 covers the side surfaces of the conductors 117a to 117d. The conductive members 117a to 117d are provided with openings that overlap with the upper surfaces of the conductive members 117a to 117d. The top surface of d is exposed.

[0084] A method for manufacturing the circuit array 360D will be described with reference to FIGS. 5(A) and 5(B).

[0085] As shown in FIG. 5A, a peeling layer 353 is formed on a substrate 351, and an insulating film is formed on the peeling layer 353. Then, a part of the insulating layer 355 is opened. Then, the transistors 303c and 303d and the conductive layer 118c are formed. The transistors 303c and 303d, the conductive layer 118c, and the like are sealed by the insulating film 18.

[0086] The transistors 303c and 303d each include a back gate, a gate insulating layer 311, a semiconductor The semiconductor device includes a conductor layer, a gate insulating layer, a gate, an insulating layer 315, a source, and a drain. The layer has a channel forming region and a pair of low resistance regions. The gate (upper gate) and the channel forming region overlap with each other via a gate insulating layer 311. The channel forming region overlaps the gate insulating layer. The source and low resistance regions are electrically connected through openings in the insulating layer 315. The conductive layers 118a and 118b functioning as drains are formed through openings in the insulating layer 355. The conductive layer 353 is in contact with the peeling layer 353 through the conductive layer 353. The conductive layer 118c formed in the above step is then exposed to the release layer 355 through an opening in the insulating layer 355. It comes into contact with 353.

[0087] The sealing layer 318 may be made of either or both of an inorganic insulating material and an organic insulating material. The sealing layer 318 can be made of a material such as a resin that can be used for an adhesive layer, a material having a barrier property, etc. Examples of the insulating film include an inorganic insulating film having high thermal conductivity and a resin film having flexibility.

[0088] Next, as shown in FIG. 5(B), the substrate 351 is peeled off using the peeling layer 353. In FIG. 1B, the conductive layers 118a, 118b, and 118c are exposed by peeling. If the peeling layer 353 remains after peeling off 351, the peeling layer 353 is removed. Conductive layers 118a, 118b, and 118c are exposed, thereby forming circuit array 360D. It can be achieved.

[0089] Then, the circuit array 360D and the LED substrate 370C are bonded together to form the structure shown in FIG. A display device 380D as shown in A) can be fabricated.

[0090] As shown in FIG. 4A, the conductor 117a provided on the LED substrate 370C is a circuit array. 360D. The electrode 116a can be electrically connected to the light emitting diode 303e and the light emitting diode 302e. It functions as a pixel electrode for the light emitting diode 302e.

[0091] Similarly, the conductor 117b provided on the LED substrate 370C is provided on the circuit array 360D. This connects the transistor 303f and the light emitting diode 118b. The electrode 116b can be electrically connected to the light emitting diode 302f. It functions as the pixel electrode for 02f.

[0092] In addition, the conductor 117c provided on the LED substrate 370D and the The electrode 112 is connected to the light emitting diodes 302e, 302c. Functions as a common electrode for 02f.

[0093] The light emitted by the light emitting diodes 302e and 302f is extracted to the sealing layer 318 side. The layer 318, the insulating layer 355, the gate insulating layer 311, and the insulating layer 315 are each transparent to the light. In addition, when a conductive material that transmits visible light is used for the conductive layers 118a and 118b, 4(A) is preferable because it allows the light emitting region to be wider than the light emitting region L1 shown in FIG.

[0094] In addition, as in a display device 380E shown in FIG. 6, low resistance regions 119a and 119b of the semiconductor layer are connected to the conductors 117a and 117b through openings provided in the insulating layer 355. In the case where an oxide semiconductor is used for the semiconductor layer, the low resistance regions 119a and 11 Since the light emitted from the light emitting diode can be transmitted through the light emitting region L2, the light emitting region L It can be wider than 1.

[0095] In addition, as in the display device 380F shown in FIG. 7, a light-emitting diode that emits light of the same color (for example, white light) may be used. The LED substrate 370D has diodes arranged in a matrix, and a colored layer (colored layer CFA, C A display device may be manufactured by bonding the circuit array 360F having the FB to the above. The light emitting diode 302e and the light emitting diode 302f emit light of the same color. The light emitted by the diode 302e is extracted to the outside of the display device 380F via the colored layer CFA. The light emitted by the light emitting diode 302f is reflected by a colored layer CF For example, red, green, and blue color layers are By providing the above in the circuit array 360F, a display device capable of full color display can be manufactured. can be done.

[0096] The display devices 380E and 380F are each manufactured by the same method as the display device 380D. The circuit array 360D is formed on the substrate 351 via the release layer 353. It can be made by changing it to circuit array 360E or circuit array 360F.

[0097] [Transistor] Next, a transistor that can be used in a display device will be described.

[0098] The structure of the transistor in the display device is not particularly limited. For example, The transistor may be a staggered type transistor, or an inverse staggered type transistor. In addition, the transistor may be of either a top gate structure or a bottom gate structure. Alternatively, gate electrodes may be provided above and below the channel.

[0099] The transistor included in the display device may be, for example, a transistor using a metal oxide in a channel formation region. This allows the realization of a transistor with extremely low off-state current. It can be realized.

[0100] Alternatively, the transistor in the display device may include a transistor having silicon in a channel formation region. The transistor may be, for example, a transistor having amorphous silicon. A transistor having crystalline silicon (typically, low-temperature polysilicon) Examples of the transistor include a transistor having a single crystal silicon.

[0101] 8(A) and 8(B) show examples of transistor configurations. Each transistor has an insulating layer 1 The insulating layer 141 is provided between the insulating layer 141 and the insulating layer 208. The insulating layer 141 functions as a base film. It is preferable that the insulating layer 208 function as a planarization film.

[0102] The transistor 220 shown in FIG. 8A has a bottom The metal oxide can function as an oxide semiconductor. Cut.

[0103] It is preferable to use an oxide semiconductor as the semiconductor of the transistor. By using semiconductor materials with a wide band gap and low carrier density, This is preferable because it can reduce the current in the OFF state.

[0104] The transistor 220 includes a conductive layer 201, an insulating layer 202, a conductive layer 203a, and a conductive layer 203b. The insulating layer 202 and the semiconductor layer 204 are disposed on the insulating substrate 201. The conductive layer 201 functions as a gate. The semiconductor layer 204 is connected to the conductive layer 2 through the insulating layer 202. The conductive layer 203a and the conductive layer 203b are electrically connected to the semiconductor layer 204. The transistor 220 is covered by an insulating layer 211 and an insulating layer 212. It is preferable that the insulating layer 211 and the insulating layer 212 are formed using various inorganic insulating films. In particular, an oxide insulating film is suitable for the insulating layer 211, and a nitride insulating film is suitable for the insulating layer 212. A solid insulating film is preferred.

[0105] The transistor 230 shown in FIG. 8B is a top-gate transistor having polysilicon in the semiconductor layer. It is a transistor with a gate structure.

[0106] The transistor 230 includes a conductive layer 201, an insulating layer 202, a conductive layer 203a, and a conductive layer 203b. , a semiconductor layer, and an insulating layer 213. The conductive layer 201 functions as a gate. The layer 202 functions as a gate insulating layer. The semiconductor layer further includes a pair of low resistance regions 214b. In FIG. 8B, the channel forming region 214 2 shows an example in which an LDD region 214c is provided between the channel formation region a and the low resistance region 214b. The conductive layer 203a overlaps with the conductive layer 201 through the insulating layer 202. Through an opening provided in the insulating layer 213, one of the pair of low resistance regions 214b Similarly, the conductive layer 203b is electrically connected to the other of the pair of low resistance regions 214b. The insulating layer 213 can be made of various inorganic insulating films. The border layer 213 is preferably a nitride insulating film.

[0107] [Metal oxides] The semiconductor layer is preferably made of a metal oxide that functions as an oxide semiconductor. describes metal oxides that can be applied to the semiconductor layer.

[0108] The metal oxide preferably contains at least indium or zinc. In addition to these, aluminum, gallium, iridium, and zinc are preferably included. It is preferable that the metal contains tritium or tin. Also, boron, titanium, iron, niobium, etc. Nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, halide One selected from fluorine, tantalum, tungsten, magnesium, etc., or A plurality of types may be included.

[0109] Here, the metal oxide is an In-M-Zn oxide having indium, element M, and zinc. Here, the element M is aluminum, gallium, yttrium, or Other elements that can be used for element M include boron, titanium, iron, and nickel. Kel, Germanium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Hafnium The elements M include nium, tantalum, tungsten, and magnesium. In some cases, a combination of the above elements may be acceptable.

[0110] In this specification, metal oxides containing nitrogen are also referred to as metal oxides. Nitrogen-containing metal oxides are also called metal oxynitrides (met de). For example, zinc oxynitride (ZnON) may be used. Any nitrogen-containing metal oxide may be used for the semiconductor layer.

[0111] In this specification, CAAC (c-axis aligned crystal ), and CAC (Cloud-Aligned Composite) CAAC represents an example of a crystal structure, and CAC represents an example of a function or material configuration. Represents.

[0112] For example, the semiconductor layer is made of CAC (Cloud-Aligned Composite)-O S can be used.

[0113] CAC-OS or CAC-metal oxide is a material that has the function of electrical conductivity. A part of the material has an insulating function, and the whole material has a semiconductor function. In addition, CAC-OS or CAC-metal oxide is used as the light-emitting layer of a transistor. When used in a material, the function of conductivity is to allow the flow of electrons (or holes) that serve as carriers. The insulating function is to prevent the flow of electrons, which act as carriers. By making the functions of the two work in a complementary manner, the switching function (On / Off) The function of providing the CAC-OS or CAC-metal oxide with the In CAC-OS or CAC-metal oxide, the respective functions are By separating the two, the functions of both can be maximized.

[0114] In addition, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. In addition, the conductive and insulating regions in the material are formed at the nanoparticle level. In addition, the conductive and insulating regions may be separated by a metal. In addition, the conductive area may be observed as a cloud-like connected area with a blurred periphery. There may be cases where this occurs.

[0115] In addition, in the CAC-OS or CAC-metal oxide, the conductive region and the insulating region are The peripheral region is 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. The following sizes may be present in the material:

[0116] In addition, CAC-OS or CAC-metal oxide has different band gaps. For example, CAC-OS or CAC-metal oxi de is a component with a wide gap due to the insulating region and a component with a narrow gap due to the conductive region. In the case of this configuration, when a carrier flows, In the narrow gap component, carriers mainly flow. The component having a narrow gap acts complementary to the component having a wide gap. Carriers also flow to the wide gap component in conjunction with the component with a large gap. AC-OS or CAC-metal oxide is placed in the channel formation region of the transistor. When used, the transistor has a high current driving force in the on-state, i.e., a large on-current. And high field effect mobility can be obtained.

[0117] That is, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite), or metal matrix composite It can also be called a composite matrix.

[0118] Oxide semiconductors (metal oxides) are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. As a non-single-crystal oxide semiconductor, for example, CAAC-OS (ca xis aligned crystalline oxide semiconductor tor), polycrystalline oxide semiconductor, nc-OS (nanocrystalline oxide de semiconductor), pseudo amorphous oxide semiconductor (a-like OS: amorphous-like oxide semiconductor), and and other materials such as oxide semiconductors.

[0119] CAAC-OS has a c-axis orientation and multiple nanocrystals are connected in the ab-plane direction. The crystal structure has distortion. The distortion is caused by the area where multiple nanocrystals are connected. In the region, between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement, Indicates the point where the direction is changing.

[0120] Nanocrystals are basically hexagonal, but are not limited to regular hexagons and may be non-regular hexagons. In addition, the distortion may have a lattice arrangement such as a pentagon or a heptagon. In the CAAC-OS, clear grain boundaries are not observed even in the vicinity of the strain. It is difficult to confirm the grain boundary due to the distortion of the lattice arrangement. This is because the CAAC-OS has a high lattice constant in the ab-plane direction. The oxygen atoms are not densely packed, and the bond distance between atoms changes due to the substitution of metal elements. This is because distortion can be tolerated by, for example, adjusting the distortion.

[0121] In addition, the CAAC-OS has a layer containing indium and oxygen (hereinafter, referred to as an In layer) and an element M The layered crystal structure ( It is also known as a layered structure. Indium and element M can be substituted for each other. When the element M in the (M,Zn) layer is replaced with indium, the (In,M,Zn) layer is Also, when indium in the In layer is replaced with element M, the (In,M) layer It can also be expressed as:

[0122] CAAC-OS is a metal oxide with high crystallinity. On the other hand, CAAC-OS has no clear crystallinity. Since it is difficult to confirm grain boundaries, the decrease in electron mobility caused by grain boundaries is unlikely to occur. In addition, the crystallinity of metal oxides decreases due to the inclusion of impurities and the generation of defects. Therefore, CAAC-OS is not suitable for impurities or defects (oxygen vacancies (V O :oxygen va It can also be said to be a metal oxide with low levels of . Metal oxides with OS have stable physical properties. Therefore, Metal oxides are heat resistant and highly reliable.

[0123] The nc-OS is a nano-sized area (e.g., an area of ​​1 nm to 10 nm, especially 1 nm to 3 nm). The nc-OS has periodic atomic arrangement in the nanometer range. There is no regularity in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analysis method, nc-OS may be considered to be a-like OS or amorphous oxide semiconductor. It may be indistinguishable from the above.

[0124] Indium gallium oxide, a type of metal oxide containing indium, gallium, and zinc, is In the case of IGZO, the nanocrystals mentioned above provide a stable structure. In particular, IGZO tends to have difficulty growing crystals in the air, Small crystals (e.g., crystals of a few mm or cm) are more difficult to measure than large crystals (here, crystals of a few mm or cm). , the nanocrystals mentioned above) may be structurally more stable.

[0125] The a-like OS is a metal oxide semiconductor with a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has voids or low density areas. The e-OS has a lower crystallinity than the nc-OS and CAAC-OS.

[0126] Oxide semiconductors (metal oxides) have a variety of structures, each with different properties. The oxide semiconductor of one embodiment of the present invention is an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-lik e OS, nc-OS, and CAAC-OS may be present in two or more types.

[0127] The metal oxide film functioning as the semiconductor layer is heated with either an inert gas or an oxygen gas, or The metal oxide film can be formed by using both of the oxygen and the nitrogen. However, in order to obtain a transistor having a high field effect mobility, In this case, the flow rate ratio of oxygen (oxygen partial pressure) during the deposition of the metal oxide film is 0% or more and 3% or less. 0% or less is preferable, 5% or more and 30% or less is more preferable, and 7% or more and 15% or less is even more preferable. preferable.

[0128] The metal oxide preferably has an energy gap of 2 eV or more, and more preferably 2.5 eV or more. More preferably, the energy is 3 eV or more, and even more preferably, the energy is 3 eV or more. By using metal oxides with a wide energy gap, the off-state current of transistors can be reduced. This can be done.

[0129] The metal oxide film can be formed by a sputtering method. A PECVD method, a thermal CVD method, an ALD method, a vacuum deposition method, or the like may also be used.

[0130] Materials that can be used for various conductive layers that constitute a display device include aluminum. , titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tin Examples of the metal include aluminum, tungsten, and other metals, and alloys that contain these metals as the main components. In addition, films containing these materials can be used as a single layer or a laminate structure. For example, a single-layer structure of an aluminum film containing silicon, or a structure in which an aluminum film is laminated on a titanium film, Two-layer structure, a two-layer structure in which an aluminum film is laminated on a tungsten film, a copper-magnesium- Two-layer structure with copper film laminated on aluminum alloy film, two-layer structure with copper film laminated on titanium film A two-layer structure in which a copper film is laminated on a tungsten film, a titanium film or a titanium nitride film, and An aluminum film or copper film is laminated on top of the aluminum film, and then a titanium film or titanium nitride film is further laminated on top of that. A three-layer structure that forms a film: a molybdenum film or a molybdenum nitride film, and an aluminum film on top of it. A tungsten film or copper film is laminated, and then a molybdenum film or molybdenum nitride film is formed on top of it. In addition, oxides such as indium oxide, tin oxide, or zinc oxide are used. In addition, when copper containing manganese is used, the controllability of the shape by etching is improved. This is preferable.

[0131] Materials that can be used for the various insulating layers that make up the display device include acrylic, polycarbonate, and acrylic resin. Resins such as polyimide, epoxy, and silicone, silicon oxide, silicon oxynitride, and oxide nitride Examples of the insulating material include inorganic insulating materials such as silicon oxide, silicon nitride, and aluminum oxide.

[0132] As described above, the display device of the present embodiment includes a plurality of light emitting diodes and a plurality of transistors. This allows the display device to be manufactured at a reduced cost and with a higher yield. In addition, the micro LED and metal oxide transistors can be used By combining these, a display device with reduced power consumption can be realized.

[0133] This embodiment mode can be appropriately combined with other embodiment modes. In the case where a plurality of configuration examples are shown in one embodiment, the configuration examples may be appropriately combined. It is possible to do this.

[0134] (Embodiment 2) In this embodiment, electronic devices according to one embodiment of the present invention will be described with reference to FIGS. .

[0135] An electronic device of this embodiment includes a display device according to one embodiment of the present invention in a display portion. Such a display device has high display quality and low power consumption. The device can be easily made larger and with higher resolution. Therefore, it is suitable for use in the display units of various electronic devices. It is possible.

[0136] The display unit of the electronic device of the present embodiment can display, for example, full high definition, 4K2K, 8K4K, It is possible to display images with resolutions of 16K8K or higher.

[0137] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Social computers, computer monitors, digital signage, pachinko machines, etc. In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals Examples of such devices include audio playback devices, etc.

[0138] The electronic device of the present embodiment is mounted on the inner or outer wall of a house or building, or the interior of a car. It can be incorporated into the curved surface of the interior or exterior.

[0139] The electronic device of this embodiment may have an antenna. In this way, images and information can be displayed on the display unit. When a secondary battery is included, the antenna may be used for contactless power transmission.

[0140] The electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays) It may be possible.

[0141] The electronic device of the present embodiment can have various functions. For example, Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar Functions such as displaying date or time, and running various software (programs) function, wireless communication function, and function for reading out programs or data recorded on a recording medium etc.

[0142] FIG. 9A shows an example of a television device. The television device 7100 includes a housing 710. A display unit 7000 is built into the housing 710. This shows a configuration that supports 1.

[0143] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0144] The television device 7100 shown in FIG. 9A is operated by an operation switch provided in a housing 7101. This can be done by a separate remote control 7111 or the display unit 7000. The television may be provided with a touch sensor, and the television may be turned on or off by touching the display unit 7000 with a finger or the like. The remote control 7111 may operate the device 7100. The device may have a display unit that displays information output from the remote control unit 7111. Channel and volume control can be performed using the touch panel or operation keys. The image displayed on the display unit 7000 can be manipulated.

[0145] The television device 7100 includes a receiver and a modem. It is also possible to receive general television broadcasts via wired or wireless connection via a modem. By connecting to a wired communication network, it can be one-way (sender to receiver) or two-way It is also possible to communicate information in both directions (between sender and receiver, or between receivers). do.

[0146] FIG. 9B shows an example of a notebook personal computer. The computer 7200 includes a housing 7211, a keyboard 7212, and a pointing device 72 13, an external connection port 7214, etc. The display unit 7000 is incorporated in the housing 7211. It is being done.

[0147] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0148] 9(C) and 9(D) show an example of digital signage.

[0149] A digital signage 7300 shown in FIG. 9C includes a housing 7301, a display unit 7000, and It also has a speaker 7303, etc. In addition, it has an LED lamp, an operation key (power switch, It can have a variety of devices, including operation switches, connection terminals, sensors, microphones, etc. .

[0150] FIG. 9(D) shows a digital signage 7400 attached to a cylindrical pole 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of a pillar 7401. Yes.

[0151] In FIG. 9C and FIG. 9D, the display device of one embodiment of the present invention is applied to the display portion 7000. It is possible.

[0152] The larger the display unit 7000, the more information can be displayed at one time. The wider the area, the more visible it is, and the more effective your advertising will be. Cut.

[0153] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It is also preferable because it not only shows the route information but also allows the user to operate it intuitively. When used to provide information such as traffic information, the device must be intuitively operated. Usability can be improved.

[0154] Also, as shown in FIG. 9(C) and FIG. 9(D), a digital signage 7300 or a digital The signage 7400 is a device that is connected to a smartphone or other information terminal 7311 or It is preferable that the display unit 7411 can be connected to the information terminal 7411 by wireless communication. The advertisement information displayed on the 7000 is displayed on the screen of the information terminal 7311 or the information terminal 7411. In addition, the information terminal 7311 or the information terminal 7411 can be operated. By operating the buttons, the display on the display unit 7000 can be switched.

[0155] In addition, the digital signage 7300 or the digital signage 7400 is provided with an information terminal 7 311 or the screen of the information terminal 7411 is used as a control means (controller) to play games. This allows an unspecified number of users to participate in the game at the same time and enjoy it. It is possible.

[0156] FIG. 10A shows the appearance of the camera 8000 with the viewfinder 8100 attached. FIG.

[0157] The camera 8000 includes a housing 8001, a display unit 8002, operation buttons 8003, and a shutter button. The camera 8000 has a detachable lens 8006. The camera 8000 may be configured such that the lens 8006 and the housing are integrated. good.

[0158] The camera 8000 can be operated by pressing the shutter button 8004 or by functioning as a touch panel. An image can be captured by touching the display unit 8002 .

[0159] The housing 8001 has a mount having electrodes, and is equipped with a finder 8100 and a strobe. Devices etc. can be connected.

[0160] The finder 8100 includes a housing 8101, a display portion 8102, a button 8103, and the like.

[0161] The housing 8101 is attached to the camera 8000 by a mount that engages with the mount of the camera 8000. The finder 8100 displays the image received from the camera 8000. The result can be displayed on the display unit 8102.

[0162] The button 8103 has a function such as a power button.

[0163] The display unit 8002 of the camera 8000 and the display unit 8102 of the finder 8100 are The display device according to the embodiment of the present invention can be applied to a camera having a built-in viewfinder. It could be 8000.

[0164] FIG. 10B is a diagram showing the external appearance of the head mounted display 8200.

[0165] The head mounted display 8200 includes a mounting part 8201, a lens 8202, and a main body 820. 3, a display unit 8204, a cable 8205, etc. It has a built-in Teri 8206.

[0166] A cable 8205 supplies power from a battery 8206 to the main body 8203. 3 is equipped with a wireless receiver and the like, and can display received video information on a display unit 8204. The main body 8203 is also equipped with a camera, and can be used as an input means to record the movement of the user's eyes and eyelids. It can be used as such.

[0167] In addition, the attachment part 8201 is provided with a flow sensor that flows in accordance with the movement of the user's eyeball at a position where the attachment part 8201 touches the user. A plurality of electrodes capable of detecting a current may be provided, and the device may have a function of recognizing a line of sight. The device may have a function of monitoring the pulse of the user based on the current flowing through the electrodes. The mounting part 8201 has various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor. The display unit 8204 may have a function to display the user's biological information, and the movement of the user's head may be The display unit 8204 may have a function of changing an image displayed on the display unit 8204 according to the occasion.

[0168] The display device of one embodiment of the present invention can be applied to the display portion 8204.

[0169] 10C, 10D, and 10E are diagrams showing the head mounted display 8300. The head mounted display 8300 includes a housing 8301 and a display unit. 8302, a band-shaped fixture 8304, and a pair of lenses 8305.

[0170] The user can view the display on the display unit 8302 through the lens 8305. If the display unit 8302 is curved, the user can feel a high sense of realism. In addition, it is preferable to project different images displayed in different areas of the display unit 8302 onto the lens 83. By viewing through the 05, it is possible to perform 3D display using parallax. The present invention is not limited to a configuration in which one display unit 8302 is provided, but two display units 8302 may be provided, and one of the display units may be displayed on the user's side. One display may be provided per eye.

[0171] The display device of one embodiment of the present invention can be applied to the display portion 8302. Since the display device has extremely high resolution, the display is displayed using a lens 8305 as shown in FIG. Even when the display is enlarged, the pixels are difficult for the user to see. 02, it is possible to allow the user to view highly realistic images.

[0172] The electronic device shown in FIG. 11A to FIG. 11F includes a housing 9000, a display portion 9001, a speaker A center 9003, an operation key 9005 (including a power switch or an operation switch), and a connection terminal 9006, Sensor 9007 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light , liquid, magnetic, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow (including functions for measuring volume, humidity, gradient, vibration, odor, or infrared rays), microphone 9008, etc.

[0173] The electronic devices shown in FIGS. 11A to 11F have various functions. Functions for displaying information (still images, videos, text images, etc.) on the display unit, touch panel functions, Functions that display calendars, dates, or times, etc., and can be used with various software (programs) Therefore, the function of controlling the processing, the wireless communication function, the program recorded on the recording medium, or The electronic device can have the following functions: The electronic device may have a variety of functions, but is not limited to these. Also, a camera or the like may be provided in the electronic device to take still images or videos and store them on a recording medium (external or built into the camera) and the function of displaying the captured image on the display unit. It may be possible.

[0174] The electronic devices shown in FIGS. 11A to 11F will be described in detail below.

[0175] FIG. 11A is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 is For example, it can be used as a smartphone. A portable information terminal 9003, a connection terminal 9006, a sensor 9007, etc. may be provided. The terminal 9101 can display text and image information on multiple surfaces. 9 shows an example in which three icons 9050 are displayed. 51 may be displayed on another surface of the display unit 9001. An example of the information 9051 is as follows: Notifications of incoming e-mails, SNS, phone calls, etc., subject lines of e-mails and SNS, sender names , date and time, time, remaining battery level, antenna reception strength, etc. An icon 9050 or the like may be displayed in the position where is displayed.

[0176] FIG. 11B is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 is The display unit 9001 has a function of displaying information on three or more screens. In the example shown in FIG. 1, information 9053 and information 9054 are displayed on different sides. When the mobile information terminal 9102 is stored in the breast pocket of the clothes, The user can also check the information 9053 displayed in a position that can be observed from above. The user can check the display without taking the mobile information terminal 9102 out of his / her pocket, and can, for example, receive a call. It is possible to determine whether or not

[0177] FIG. 11C is a perspective view showing a wristwatch-type mobile information terminal 9200. The display unit 9001 can be used as a smart watch, for example. The display surface is curved, and the display can be performed along the curved display surface. The portable information terminal 9200 can communicate with, for example, a wireless headset. The mobile information terminal 9200 can also be used for hands-free conversation. The 9006 can transmit data to and from other information terminals and can also charge the device. The charging operation may be performed by wireless power supply.

[0178] 11(D), 11(E), and 11(F) show a foldable portable information terminal 9201. 11(D) is a perspective view showing a state where the portable information terminal 9201 is unfolded, and FIG. (F) is the folded state, and Fig. 11(E) is the state of Fig. 11(D) and Fig. 11(F) from one side to the other. 9 is a perspective view of a state in the middle of changing. When unfolded, the seamless, wide display area provides excellent visibility of the display. The display unit 9001 of the portable information terminal 9201 has three hinges 9055. For example, the display unit 9001 has a curvature radius of 0.1 mm or more. It can be bent to less than 150 mm.

[0179] This embodiment mode can be appropriately combined with other embodiment modes and examples. [Explanation of symbols]

[0180] 111a: conductive layer, 111b: conductive layer, 111c: conductive layer, 111d: conductive layer, 112: Electrode, 112a: electrode, 112b: electrode, 113: semiconductor layer, 113a: semiconductor layer, 11 3b: semiconductor layer, 114: light emitting layer, 114a: light emitting layer, 114b: light emitting layer, 115: semiconductor layer, 115a: semiconductor layer, 115b: semiconductor layer, 116: electrode, 116a: electrode, 11 6b: electrode, 117a: conductor, 117b: conductor, 117c: conductor, 117d: conductor body, 118a: conductive layer, 118b: conductive layer, 118c: conductive layer, 119a: low resistance region, 119b: low resistance region, 141: insulating layer, 201: conductive layer, 202: insulating layer, 203a: Conductive layer, 203b: conductive layer, 204: semiconductor layer, 208: insulating layer, 211: insulating layer, 21 2: insulating layer, 213: insulating layer, 214a: channel formation region, 214b: low resistance region, 2 14c: LDD region, 220: transistor, 230: transistor, 302a: light emitting diode 302b: light emitting diode, 302c: light emitting diode, 302d: light emitting diode 302e: light emitting diode, 302f: light emitting diode, 303a: transistor 303b: transistor, 303c: transistor, 303d: transistor, 30 3e: transistor, 303f: transistor, 311: gate insulating layer, 312: insulating layer , 313: insulating layer, 314: insulating layer, 315: insulating layer, 318: sealing layer, 351: substrate, 353: release layer, 355: insulating layer, 360A: circuit board, 360B: circuit board, 360C : Circuit board, 360D: Circuit array, 360E: Circuit array, 360F: Circuit array, 3 61: substrate, 362: substrate, 363: adhesive layer, 367: insulating layer, 370A: LED substrate, 370B: LED board, 370C: LED board, 370D: LED board, 371: board, 373: Protective layer, 380A: Display device, 380B: Display device, 380C: Display device, 38 0D: Display device, 380E: Display device, 380F: Display device, 7000: Display unit, 710 0: Television device, 7101: Housing, 7103: Stand, 7111: Remote control operation 7200: Notebook personal computer, 7211: Case, 7212: Keyboard 7213: Pointing device, 7214: External connection port, 7300: Digital Signage, 7301: Housing, 7303: Speaker, 7311: Information terminal, 7400 : Digital signage, 7401: Pillar, 7411: Information terminal, 8000: Camera, 80 01: Housing, 8002: Display unit, 8003: Operation buttons, 8004: Shutter button, 8006: Lens, 8100: Finder, 8101: Housing, 8102: Display, 81 03: Button, 8200: Head-mounted display, 8201: Wearing part, 8202: Lens, 8203: Main unit, 8204: Display unit, 8205: Cable, 8206: Battery , 8300: Head-mounted display, 8301: Housing, 8302: Display unit, 830 4: Fixture, 8305: Lens, 9000: Housing, 9001: Display, 9003: Speaker 9005: Operation key, 9006: Connection terminal, 9007: Sensor, 9008: Micro Phone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 90 54: Information, 9055: Hinge, 9101: Mobile information terminal, 9102: Mobile information terminal, 9 200: Portable information terminal, 9201: Portable information terminal

Claims

[Claim 1] a substrate, a plurality of transistors, and a plurality of light emitting diodes; The plurality of light emitting diodes are provided in a matrix on the substrate, each of the plurality of transistors is electrically connected to at least one of the plurality of light emitting diodes; the plurality of light emitting diodes are located closer to the substrate than the plurality of transistors; The display device, wherein the plurality of light emitting diodes emit light toward an opposite side to the substrate.

Images