Display device

Abstract

To provide a display device with high reliability.SOLUTION: A display device has flexibility and includes at least a first display region and a second display region. At least a part of wires provided in the first region or the second region is a meandering or chained wire. By forming the meandering or chained wire, the short-circuiting or disconnection of the wire due to curving or bending of the display device can be suppressed. By forming the meandering or chained wire, the operation failure, the decrease in reliability, and the like in the display device can be prevented.SELECTED DRAWING: Figure 26

Description

[Technical field]

[0001] One aspect of the present invention relates to an article, a method, or a method of manufacture. Process, machine, manufacture, or composition of matter Another embodiment of the present invention relates to a semiconductor device, a display device, a light-emitting device, a lighting device, a power storage device, The present invention relates to a device, a storage device, a processor, and a method for driving or manufacturing them.

[0002] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. Refers to devices in general. For example, semiconductor elements (diodes, transistors, etc.), semiconductor circuits, etc. The semiconductor device may be a display device, a light-emitting device, a lighting device, a photoelectric conversion device, a memory device, an imaging device, etc. Imaging devices, electronic equipment, and the like may contain semiconductor devices. [Background technology]

[0003] In recent years, portable electronic devices such as smartphones and tablet terminals have become widespread. In Patent Document 1, a flexible display device is bent to display multiple images on multiple surfaces. 2 shows an electronic device having a display unit.

[0004] In addition, as a display device, an active layer having a transistor for driving a display element in each pixel is used. Active matrix display devices are known. For example, Active matrix type liquid crystal display devices and light emitting devices such as organic EL elements as display elements Active matrix type light emitting display devices using these active Compared to the simple matrix type display device, the solid matrix type display device has a larger screen and higher resolution. It is easy to make thinner and has advantages in terms of reducing power consumption. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Special Publication No. 2014-535086 Summary of the Invention [Problem to be solved by the invention]

[0006] In recent years, there has been a demand for miniaturization of portable electronic devices. For example, In order to realize miniaturization of electronic devices, it is necessary to reduce the radius of curvature of the bending part of the flexible display. However, in the electronic device shown in Patent Document 1, Since display elements and wiring are installed at the bent part of the spray, the radius of curvature of the bent part is If it is made smaller, malfunctions due to short circuits or breaks in the wiring or electrodes provided at the bent parts may occur. However, there is a problem in that reliability is easily reduced.

[0007] In addition, there is a demand for reduced power consumption in portable electronic devices. Smartphones, tablet devices, smart watches, notebook personal computers, etc. In the case of battery-powered devices, the ratio of the power consumption of the display device to the total power consumption is Therefore, there is a demand for display devices with low power consumption.

[0008] In addition, portable electronic devices are used in environments with high external light illuminance and environments with low external light illuminance. In both cases, high visibility is required.

[0009] In addition, if a portable electronic device is dropped or placed in a trouser pocket, etc., In such a case, the display device may be broken. Therefore, it is required that the device is resistant to shock and not easily damaged.

[0010] An object of one embodiment of the present invention is to provide a display device or the like with high display quality. Another object of the present invention is to provide a display device or the like having high reliability. One of the objectives is to provide a display device that is low in force or is impact-resistant. It is one of the objects to provide a display device that is not easily damaged. Another object of the present invention is to provide a lightweight display device. Another object of the present invention is to provide a display device or the like that is highly productive. One of the objectives is to provide a new display device.

[0011] The description of these problems does not preclude the existence of other problems. It is not necessary for the embodiment to solve all of these problems. The above will become apparent from the description in the specification, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0012] One aspect of the present invention is a display device including a first display area, a second display area, a third display area, and a display unit including the first display area and a second display area. A display device having a first region and a second region, the display device having a bending function in the first region and the second region. A display device, the first display area and the second display area being adjacent to each other via a first area, The second display area and the third display area are adjacent to each other through the second area, and in the first area The second display region does not have an electrode that electrically connects the first display region and the second display region. and the display device does not have an electrode that electrically connects the second display area and the third display area. .

[0013] One aspect of the present invention is a display device including a first display area, a second display area, a third display area, and a display unit including the first display area and a second display area. A display device having a first region and a second region, the display device having a bending function in the first region and the second region. A display device, the first display area and the second display area being adjacent to each other via a first area, The second display area and the third display area are adjacent to each other through the second area, and in the first area A first wiring electrically connects the first display area and the second display area, and a second wiring electrically connecting the second display area and the third display area; A display device, wherein the wiring and the second wiring are meander-shaped. It is located.

[0014] One aspect of the present invention is a display device having a first display area, a second display area, and a first area. The display area and the second display area are adjacent to each other via the first area, and the first display area is The display device has wiring, and the first wiring has a meandering shape. The display area may have a curved surface.

[0015] One aspect of the present invention is a display device having a first display area, a second display area, and a first area. The display area and the second display area are adjacent to each other via the first area, and the first display area is the first display area has a second wiring, the first area has a third wiring, and the second display area has a third wiring. The first wiring is electrically connected to the third wiring, and the second wiring is electrically connected to the third wiring. At least one of the first wiring and the third wiring is meandering. The first display area may have a curved surface.

[0016] Another embodiment of the present invention is the above display device including a first substrate and a second substrate. Thus, the first display area, the second display area, and the first area, or the first display area The second display region, the third display region, the first region, and the second region are formed on a first substrate and The first substrate and the second substrate are preferably flexible. stomach.

[0017] Each of the first to third display areas includes a first display element and a second display element. The first display element has a function of reflecting visible light, and the second display element has a function of emitting visible light. It has functions.

[0018] The first display element can be, for example, a liquid crystal element. The second display element can be, for example, An organic EL element can be used.

[0019] Another embodiment of the present invention is a display device including the above display device, a touch sensor, an antenna, a battery, a housing, and a display unit. The electronic device has a body, a speaker, a microphone, or an operation switch. Effect of the Invention

[0020] According to one embodiment of the present invention, a display device or the like with high display quality can be provided. In addition, a display device with high reliability can be provided. Alternatively, a display device that is resistant to shocks can be provided. Alternatively, a display device that is not easily damaged can be provided. Alternatively, a lightweight display device can be provided. Alternatively, a display device with high productivity can be provided. Alternatively, a novel display device or the like can be provided.

[0021] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have all of these effects. Effects other than these may be included in the description, This is self-evident from the description in the drawings, claims, etc. It is possible to extract other effects from any of the descriptions. [Brief description of the drawings]

[0022] [Figure 1] 1A to 1C are diagrams illustrating electronic devices. [Diagram 2] 1A to 1C are diagrams illustrating electronic devices. [Diagram 3] FIG. 1 is a block diagram illustrating an electronic device. [Figure 4] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Diagram 5] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 6] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 7] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 8] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 9] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 10] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 11] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 12] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 13] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 14] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 15] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 16]1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 17] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 18] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 19] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 20] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 21] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 22] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Diagram 23] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 24] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Diagram 25] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 26] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 27] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 28] 1A to 1C are diagrams illustrating one embodiment of the present invention. [Figure 29] 1A to 1C illustrate examples of the structure of a light-emitting element. [Diagram 30] 1A to 1C are diagrams illustrating examples of electronic devices. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention may be modified in various ways in form and detail without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be modified in various ways. In addition, the present invention is not limited to the above embodiment. In the drawings, the same reference numerals are used to designate the same parts or parts having similar functions. In some cases, the detailed description will be omitted.

[0024] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily intended to facilitate understanding of the invention. Therefore, the actual location, size, range, etc. may not be shown. The invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings. For example, in the actual manufacturing process, layers and resist masks are removed by processes such as etching. Although some losses may occur unintentionally, they may be omitted to make the data easier to understand.

[0025] In addition, in order to facilitate understanding of the invention, particularly in top views (also called "plan views") and perspective views, In order to simplify the illustration, some of the components may be omitted. may be omitted.

[0026] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The numbers are merely given to indicate the order or sequence of steps or lamination. In addition, even if a term is not accompanied by an ordinal number in this specification, etc., it is not necessary to confuse the constituent elements. In order to clarify the scope of the invention, ordinal numbers may be used in the claims. Even if a term is numbered in the first place, it may be numbered in a different way in the claims. In addition, even if a term is given an ordinal number in this specification, etc., In the claims, etc., ordinal numbers may be omitted.

[0027] In addition, the terms "electrode" and "wiring" used in this specification and the like do not limit the functionality of these components. For example, an "electrode" may be used as part of a "wiring." In addition, the term "electrode" or "wiring" may be used to refer to the plural "electrodes" or "wirings". This also includes cases where the "line" is installed as an integral part.

[0028] In this specification, the terms "above" and "below" refer to the positional relationship of components directly above or below each other. For example, "the electrode on insulating layer A is directly in contact with the insulating layer A" is not limited to the above. If the expression is "electrode B", it is not necessary for electrode B to be directly on insulating layer A. The inclusion of other components between the edge layer A and the electrode B is not excluded.

[0029] The source and drain functions may also be different in some cases, such as when transistors of different polarities are used, or when When the direction of the current changes during operation of the circuit, the two are interchangeable depending on the operating conditions. Therefore, it is difficult to determine which is the source and which is the drain. In this specification, the terms source and drain may be used interchangeably. It shall be so.

[0030] In addition, when it is explicitly stated in this specification that X and Y are connected, is when X and Y are electrically connected and when X and Y are functionally connected. and the case where X and Y are directly connected are considered to be disclosed in this specification and the like. Therefore, the present invention is not limited to a specific connection relationship, for example, a connection relationship shown in a drawing or a sentence. Any connections other than those shown in the drawings or text shall be deemed to be described in the drawings or text. do.

[0031] In addition, in this specification, "electrically connected" means "something that has some electrical effect" " includes cases where the device is connected via "anything that has some electrical effect." " is not subject to any particular restriction as long as it enables the transmission and reception of electrical signals between the connection objects. Therefore, even if it is expressed as "electrically connecting," in the actual circuit, In some cases, there are no physical connections and only wires running along the wiring.

[0032] Note that the channel length is, for example, the length of a semiconductor (or transistor) in a top view of a transistor. When the transistor is on, the gate electrode (the part of the semiconductor through which current flows) overlaps with the The source (source region or source electrode) in the region where the ) to the drain (drain region or drain electrode). In the transistor, the channel length does not necessarily have the same value in all regions. The channel length of a transistor may not be determined to a single value. In the detailed description, the channel length is any one value or the maximum value in the region where the channel is formed. , the minimum or average value.

[0033] The channel width is, for example, the width of the semiconductor (or transistor) in a top view of the transistor. The area where the gate electrode overlaps with the semiconductor (the part through which current flows when the semiconductor is on) Or the length (width) of the area where the source and drain face each other in the region where the channel is formed. In many cases, the extending direction of the channel length and the extending direction of the channel width are perpendicular to each other. In one transistor, the channel width does not necessarily have the same value in all regions. That is, the channel width of one transistor may not be fixed to one value. In this specification, the channel width is any one of the values ​​in the region where the channel is formed, This can be the maximum, minimum or average value.

[0034] Depending on the structure of the transistor, the channel in the region where the channel is actually formed may vary. The effective channel width (hereinafter also referred to as the "effective channel width") shown in the top view of the transistor The channel width actually observed (hereinafter also referred to as the "apparent channel width") may differ from the For example, when the gate electrode covers the side surface of the semiconductor layer, the effective channel width becomes In some cases, the effect of the channel width becomes larger than that of the conventional method. In a transistor in which the gate electrode covers the side surface of the semiconductor, the channel formed on the side surface of the semiconductor In this case, the ratio of the channel formation region may be larger than the apparent channel width. , the effective channel width becomes larger.

[0035] In such a case, it may be difficult to estimate the effective channel width through actual measurement. For example, to estimate the effective channel width from the design value, the shape of the semiconductor is known. Therefore, if the shape of the semiconductor is not known precisely, the effective It is difficult to measure channel width accurately.

[0036] Therefore, in this specification, the apparent channel width is defined as the "surrounding channel width (SCW)". In addition, in this specification, So, when we simply write "channel width," it means the enclosed channel width or the apparent channel width. In this specification, when the term "channel width" is used, it refers to the actual In addition, the channel length, channel width, and effective channel The width, apparent channel width, and enclosed channel width can be determined by analyzing cross-sectional TEM images. The value can be determined by, for example,

[0037] In addition, the field effect mobility of the transistor and the current value per channel width are calculated. In some cases, the effective channel width is calculated using the enclosed channel width. The value may differ from that calculated using the channel width.

[0038] In addition, the term "impurities" in a semiconductor refers to, for example, anything other than the main component that constitutes the semiconductor. For example, Elements with a concentration of less than 0.1 atomic percent can be considered impurities. This increases the density of state (DOS) of the semiconductor and increases the carrier mobility. In some cases, the mobility and crystallinity of the semiconductor may decrease. In the case of semiconductors, impurities that change the properties of the semiconductor include, for example, group 1 elements, Oxides of Group 2 elements, Group 13 elements, Group 14 elements, Group 15 elements, and transition metals There are elements other than the main components of semiconductors, such as hydrogen, lithium, sodium, silicon, and phosphide. These include uron, phosphorus, carbon, and nitrogen.

[0039] In this specification, "parallel" means that two straight lines are at an angle of -10° or more and 10° or less. Therefore, it includes the case where the angle is between -5° and 5°. "Parallel" refers to two lines that are arranged at an angle between -30° and 30°. In addition, "perpendicular" and "orthogonal" mean that two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, it includes the case where the angle is between 85° and 95°. "Straight" refers to two straight lines that form an angle of 60° or more and 120° or less.

[0040] In this specification, the terms "same," "the same," and "equal" are used to refer to counting values ​​and measurement values. " or "uniform" (including their synonyms), unless expressly stated The measurements are subject to a margin of error of plus or minus 20%.

[0041] In the present specification and the like, a resist mask is formed by a photolithography method, and the If an etching process (removal process) is performed later, the resist mask is The mask shall be removed after the etching process is completed.

[0042] In this specification and the like, a high power supply potential VDD (also referred to as "VDD" or "H potential") ) is a potential higher than the low power supply potential VSS (also called "VSS" or "L potential"). The low power supply potential VSS is a power supply potential that is lower than the high power supply potential VDD. The ground potential (also called "GND" or "GND potential") is set to VDD or For example, if VDD is at ground potential, VSS can be used as the ground potential. If VSS is at ground potential, VDD is at a potential higher than ground potential. It is ranked th.

[0043] The words "membrane" and "layer" may be interchangeable depending on the situation. For example, the term "conductive film" can be replaced with "conductive layer". ". Alternatively, for example, the term "insulating film" may be used. It may be possible to change the term to "insulating layer."

[0044] In this specification, a transistor includes a gate, a drain, and a source. It is an element that has at least three terminals. And the drain (drain terminal, drain Between the source (source terminal, source region or source electrode) and the It has a channel region and allows a current to flow between the source and the drain through the channel region. In this specification and the like, the channel region refers to a region through which a current mainly flows. This refers to the area in which the fluid flows.

[0045] In addition, unless otherwise specified, the transistors shown in this specification are enhancement type (non- The transistor shown in this specification is a field effect transistor of a 1000V type. Unless otherwise specified, the transistors are n-channel transistors. Unless otherwise specified, the voltage (also referred to as "Vth") is greater than 0 V.

[0046] In this specification and the like, the Vth of a transistor having a back gate is If not, Vth refers to the Vth when the back gate potential is the same as the source or gate potential. .

[0047] Unless otherwise specified in this specification, the off-state current refers to the current that flows when a transistor is in an off-state. Drain current. This refers to the drain current when the device is in a non-conducting state (also called a "non-conducting state" or "cut-off state"). Unless otherwise specified, the off state is when the gate and source of an n-channel transistor are in an off state. In a p-channel transistor, the voltage Vgs between the gate and the gate is lower than the threshold voltage Vth. This refers to a state in which the voltage Vgs between the gate and source is higher than the threshold voltage Vth. For example, The off-state current of an n-channel transistor is the voltage between the gate and source, Vgs, that is, the threshold The drain current may refer to the drain current when the drain voltage is lower than the threshold voltage Vth.

[0048] The off-state current of a transistor may depend on Vgs. The current is I or less if there is a Vgs value at which the off-state current of the transistor is I or less. The off-state current of a transistor is the off-state current at a given Vgs. Off-state at Vgs within a given range or sufficiently reduced off-current is obtained It may refer to the off-state current at Vgs, etc.

[0049] As an example, when the threshold voltage Vth is 0.5V and Vgs is 0.5V, The current is 1×10 -9 A, and the drain current at Vgs of 0.1 V is 1×10 -13 A, and the drain current at Vgs -0.5 V is 1×10 -19 A and Vgs The drain current at -0.8V is 1×10 -22 A n-channel transistor The drain current of the transistor is as follows when Vgs is -0.5V: Or, when Vgs is in the range of -0.8V to -0.5V, 1×10 -19 Below A Therefore, the off-current of the transistor is 1×10 -19 There are cases where it is less than A. The drain current of the transistor is 1×10 -22 There exists a Vgs below A Therefore, the off-state current of the transistor is 1×10 -22 It may be said that it is below A.

[0050] The off-state current of a transistor may depend on temperature. Unless otherwise specified, the temperature is room temperature (RT), 60℃, 8 It may represent the off-state current at 5°C, 95°C, or 125°C. The temperature at which the reliability of a semiconductor device that includes a transistor is guaranteed, or At temperatures where the semiconductor device, etc. contained in the device is used (for example, temperatures between 5°C and 35°C) The off-state current of a transistor is sometimes expressed as RT, 6 0℃, 85℃, 95℃, 125℃, the reliability of the semiconductor device including the transistor is guaranteed The temperature at which the transistor is certified, or the temperature at which a semiconductor device or the like that contains the transistor is used (e.g. For example, the V This may refer to the existence of a gs value.

[0051] The off-state current of a transistor may depend on the voltage Vds between the drain and source. In this specification, unless otherwise specified, the off-state current is measured when Vds is 0.1 V, 0.8 V, 1 V, 1.2V, 1.8V, 2.5V, 3V, 3.3V, 10V, 12V, 16V, or It may represent the off-state current at 20 V. Or, the semiconductor including the transistor Vds that guarantees the reliability of devices, etc., or semiconductor devices that include the transistor The off-state current of a transistor may be expressed as the off-state current at the Vds used in the The current is less than I when Vds is 0.1V, 0.8V, 1V, 1.2V, 1.8V, 2 .5V, 3V, 3.3V, 10V, 12V, 16V, 20V, transistors included Vds that guarantees the reliability of the semiconductor device in which the transistor is included, or Vds used in the device, etc., Vg at which the off-state current of the transistor is I or less It may refer to the existence of a value of s.

[0052] In the above description of the off-state current, the drain may be read as the source. may also refer to the current that flows through the source when the transistor is in the off state.

[0053] In addition, in this specification and the like, the term "leak current" may be used to mean the same thing as the "off current." In this specification, the off-state current refers to, for example, the current flowing when a transistor is in an off state. It can refer to the current that flows between the source and drain.

[0054] In this specification, the term "metal oxide" refers to a metal oxide in a broad sense. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). , oxide semiconductor (also called OS) For example, when a metal oxide is used in the active layer of a transistor, the metal oxide In other words, metal oxides have the functions of amplification, rectification, and switching action, the metal oxide is called a metal oxide semiconductor. Metal oxide semiconductor, abbreviated as OS In addition, when describing OS FET, it is possible to use a metal oxide or an oxide semiconductor. In other words, it is a transistor having a body.

[0055] In the present specification and the like, metal oxides having nitrogen are also referred to as metal oxides. Nitrogen-containing metal oxides are also called metal oxynitrides (met de). It may also be called tetrahydrofuran (tetrahydrofuran) oxynitride.

[0056] In the present specification and the like, the term CAAC (c-axis aligned crystal ), and CAC (cloud-aligned composite) CAAC represents an example of a crystal structure, and CAC represents an example of a function or material configuration. Represents.

[0057] In the present specification and the like, CAC-OS or CAC-metal oxide means A part of the material has a conductive function, and a part of the material has an insulating function, and the whole material has a It functions as a semiconductor. CAC-OS or CAC-metal oxide When e is used in the active layer of a transistor, the conductive function is to transfer electrons (or The insulating function is the function of allowing the passage of electrons (carriers) and the insulating function is the function of preventing the passage of electrons (carriers). The conductive function and the insulating function work in a complementary manner. You can set the function to turn on / off the CAC-OS or CAC-metal It can be added to CAC-OS or CAC-metal oxide. By separating the functions of each in e, it is possible to maximize the functions of both. Cut.

[0058] In the present specification and the like, CAC-OS or CAC-metal oxide is a conductive material. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. The region has the insulating function described above. In addition, the material has a conductive region and an insulating region. The regions may be separated at the nanoparticle level. The conductive regions may be unevenly distributed in the material. They may be observed connected in a circular fashion.

[0059] In addition, in the CAC-OS or CAC-metal oxide, the conductive region and the insulating region are The peripheral region is 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. The following sizes may be present in the material:

[0060] In addition, CAC-OS or CAC-metal oxide has different band gaps. For example, CAC-OS or CAC-metal oxi de is a component with a wide gap due to the insulating region and a component with a narrow gap due to the conductive region. In the case of this configuration, when a carrier flows, In the narrow gap component, carriers mainly flow. The component having a narrow gap acts complementary to the component having a wide gap. Carriers also flow to the wide gap component in conjunction with the component with a large gap. AC-OS or CAC-metal oxide is used for the channel region of the transistor. In this case, the transistor has a high current driving capability in the on-state, i.e., a large on-current, and High field effect mobility can be obtained.

[0061] That is, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite), or metal matrix composite It can also be called a composite matrix.

[0062] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described with reference to drawings.

[0063] <Electronic equipment 100> FIG. 1A is a perspective view of a portable electronic device 100 including a display device of one embodiment of the present invention. FIG. 1B shows the left side of the electronic device 100, and FIG. 1C shows the front of the electronic device 100. FIG. 1(D) shows the right side of the electronic device 100. FIG. 2(A) shows the right side of the electronic device 100. 2(B) is a cross-sectional view of the portion indicated by the dashed line X1-X2 in FIG. 1 is a cross-sectional view of a portion indicated by dashed dotted line Y1-Y2 in FIG.

[0064] The electronic device 100 includes a housing 101, an audio output device 102, an operation switch 103, and an audio The device includes an input device 104, an imaging device 105, and a display device 110. A display area 111 overlaps the front surface of the electronic device 100, and a display area 112 overlaps the left side surface of the electronic device 100. The electronic device 100 has a display area 112 and a display area 113 overlapping the right side surface of the electronic device 100.

[0065] In addition, the electronic device 100 includes a circuit board 160, a battery 170, an antenna 180, etc. (See FIG. 2(A) and (B)). In addition, a calculation device 161 and a communication device are provided on a circuit board 160. A reception device 162, a storage device 163, a display control device 164, an attitude detection unit 165, etc. In addition, other semiconductor devices may be provided in the area 151 in the housing 101. In addition, the area 151 may include a heat dissipation member, a member that absorbs or blocks electromagnetic waves, and / or Alternatively, a functional member such as a member for shielding magnetic field may be provided.

[0066] [Hardware configuration example] An example of the hardware configuration applicable to the electronic device 100 will be described below.

[0067] FIG. 3 is a block diagram showing an example of a configuration applicable to the electronic device 100. As shown in FIG.

[0068] In the drawings attached to this specification, the components are classified by function and are shown as independent blocks. Although the block diagram is shown as a block diagram, the actual components are completely separated by function. It is difficult to determine whether a single component is related to multiple functions, or whether a single function is related to multiple components. It may also be related to.

[0069] In addition, the configuration of the electronic device 100 illustrated in FIG. 3 is an example, and it is not necessary to include all of the components. The electronic device 100 only needs to include the necessary components among those shown in FIG. In addition, the device may have components other than those shown in FIG.

[0070] The electronic device 100 includes a display device 110, a computing device 161, a touch sensor 131, and a storage device 1 63, display control device 164, touch sensor controller 132, battery controller 171, power receiving unit 172, battery 170, sound controller 169, voice input device 1 04, audio output device 102, communication device 162, antenna 180, attitude detection unit 165, external An interface 168, an imaging device 105, a vibration device 166, a sensor module 167, etc.

[0071] A storage device 163, a display control device 164, a touch sensor controller 132, a battery controller 171, sound controller 169, communication device 162, attitude detection unit 165, External interface 168, imaging device 105, vibration device 166, sensor module 16 7, etc. are each connected to a computing device 161 via a bus line 141.

[0072] The touch sensor 131 may be provided on the display device 110. The function of 1 may be given to the display device 110.

[0073] The arithmetic unit 161 is, for example, a central processing unit (CPU). The arithmetic unit 161 can function as, for example, a touch sensor. Controller 132, battery controller 171, sound controller 169, communication device 162, a posture detection unit 165, an external interface 168, an imaging device 105, a vibration device The computing device 165 has a function of controlling each component such as the sensor module 167. The device 161 may be provided with additional functions such as a storage device 163 and a display control device 164. stomach.

[0074] Signals are transmitted between the arithmetic unit 161 and each component via a bus line 141. The arithmetic unit 161 receives inputs from each component connected via the bus line 141. The function to process the signals input to the HDMI input and the function to generate the signals to be output to each component are also included. and can comprehensively control each component connected to the bus line 141. .

[0075] In addition, a channel is formed in the arithmetic device 161 or an IC included in another component. An extremely low off-state current is achieved by using an oxide semiconductor, a type of metal oxide, for the semiconductor layer. Since the off-state current of the transistor is extremely low, Therefore, the transistor is used as a memory element to store electric charge (data) in a capacitor. By using it as a switch to hold data, it is possible to ensure long-term data retention. By using this characteristic in the registers and cache memory of the arithmetic unit 161, The arithmetic unit 161 is operated only when necessary, and in other cases, the information of the immediately preceding processing is stored in the memory element. By evacuating the computer to a remote location, normally-off computing becomes possible, and electronic devices It is possible to reduce the power consumption of the 100.

[0076] The arithmetic unit 161 interprets and executes instructions from various programs using a processor. It processes various data and controls programs. The data may be stored in a memory area of ​​the processor or in the storage device 163. It may be possible.

[0077] The arithmetic unit 161 may be a CPU or a DSP (Digital Signal Processor). processor), GPU (Graphics Processing Unit), etc. Other microprocessors may be used alone or in combination. The microprocessor is integrated into the FPGA (Field Programmable Gate A rray) and FPAA (Field Programmable Analog Arr Programmable Logic Devices (PLDs) such as The configuration may be realized by the above.

[0078] The computing device 161 may have a main memory. The main memory may include a RAM (Random Access Memory). ROM (Read-Only Access Memory) and other volatile memory. The configuration may include a non-volatile memory such as a serially integrated memory.

[0079] The RAM provided in the main memory is, for example, DRAM (Dynamic Random Access Memory). A virtual memory (VRAM) is used as the working space of the arithmetic unit 161. The memory space is allocated and used automatically. Operating systems, application programs, program modules, program data, etc. These data and programs are loaded into RAM for execution. The RAM and program modules are directly accessed and operated by the processor 161.

[0080] On the other hand, ROM has a BIOS (Basic Input / Output) that does not require rewriting. It can store the ROM, such as the BIOS System, firmware, etc. ROM and OTPROM (One Time Programmable Read Only Memory), EPROM (Erasable Programmability) EPROM can be used. UV-EPROM (Ultra-Vision) is a type of EEPROM that allows data to be erased by exposure to ultraviolet light. olet Erasable Programmable Read Only Mem ory), EEPROM (Electrically Erasable Program memory, memory card, and flash memory. do.

[0081] The storage device 163 may be, for example, a flash memory or an MRAM (Magnetores istive Random Access Memory), PRAM (Phase change RAM), ReRAM (Resistance RAM), FeRAM ( A storage device that uses non-volatile memory elements such as Ferroelectric RAM. , or DRAM (Dynamic RAM) or SRAM (Static RAM), etc. A storage device using a volatile storage element such as a hard disk may also be used. Hard Disk Drive (HDD) and Solid State Drive (S You can also use a recording media drive such as SSD (solid state drive). stomach.

[0082] In addition, a removable HDD or SS can be connected via the external interface 168. D and other storage devices, flash memory, Blu-ray discs, DVDs and other recording media A media drive can also be used as the storage device 163. A storage device that is not built into the electronic device 100 but is placed outside the electronic device 100 is referred to as a storage device 163. In that case, the external interface 168 may be connected to the The communication device 162 may be configured to exchange data wirelessly.

[0083] The display control device 164 is connected to the arithmetic device 161 via the bus line 141. The display control device 164 is connected to the display device 110. In response to a drawing instruction input from 161, the display device 110 is controlled to display a corresponding It has the function of displaying a specific image.

[0084] The touch sensor 131 is connected to a touch sensor controller 132. The controller 132 is connected to the arithmetic unit 161 via a bus line 141 .

[0085] The touch sensor controller 132 is connected to the arithmetic unit 161 via the bus line 141. In response to requests from the touch sensor 131, the touch sensor 131 is controlled. The signal is output to the arithmetic unit 161 via the bus line 141. The touch sensor controller 132 has a function of calculating touch position information from the signal. Alternatively, the calculation may be performed by the arithmetic unit 161.

[0086] The touch sensor 131 also operates based on a signal supplied from the touch sensor controller 132. It detects the approach or contact of a sensing object such as a finger or stylus and detects its position. The position information can be output to the touch sensor controller 132.

[0087] The touch sensor 131 and the touch sensor controller 132 are also exposed to light from their detection surfaces. It is preferable that the device has a function of acquiring the distance in the height direction to the detection object. It is preferable that the pressure sensor has a function of acquiring the magnitude of the pressure applied to the detection surface. It is preferable that the device has a function of acquiring the size of the area where the body is in contact with the detection surface.

[0088] The touch sensor 131 is a module having a touch sensor, which is overlaid on the display surface side of the display panel. In this case, the touch sensor may be provided in a module. It is preferable that at least a part of the display panel is flexible and can be curved along the display panel. The module equipped with the touch sensor and the display panel can be bonded with adhesive or the like. A polarizing plate or a buffer material (separator) may be provided between them. It is preferable that the thickness of the module is equal to or smaller than the thickness of the display panel.

[0089] The touch sensor 131 may be a touch panel in which a display device and a touch sensor are integrated. For example, it can be an on-cell type touch panel or an in-cell type touch panel. It is preferable that the on-cell or in-cell touch panel is thin and lightweight. Furthermore, on-cell or in-cell touch panels can reduce the number of parts. This allows costs to be reduced.

[0090] The touch sensor 131 detects the approach or contact of a detection target such as a finger. Various sensors can be used. For example, capacitive, resistive, surface acoustic wave, infrared, etc. Sensors that use a line method, an electromagnetic induction method, an optical method, or the like can be used. In addition, optical sensors using photoelectric conversion elements and pressure-sensitive sensors using pressure-sensitive elements are also used. Also, two or more types of sensors of different types may be provided, or sensors of the same type may be provided. It may have two or more.

[0091] For example, a capacitive touch sensor includes a pair of conductive layers. When the object to be detected touches, presses, or approaches the pair of conductive layers, The change in capacitance between the pair of conductive layers can be utilized for detection.

[0092] The capacitive type includes a surface capacitive type and a projected capacitive type. Capacitive types include self-capacitive types and mutual-capacitive types, which differ mainly in their driving methods. The mutual capacitance method is preferable because it facilitates simultaneous multi-point detection.

[0093] The battery controller 171 can manage the charging state of the battery 170. The battery controller 171 supplies power from the battery 170 to each component. The power receiving unit 172 receives power supplied from an external source and charges the battery 170. The battery controller 171 controls the power reception according to the charging state of the battery 170. The operation of the unit 172 can be controlled by the controller 172 .

[0094] The battery 170 includes, for example, one or more primary batteries and / or secondary batteries. Examples of secondary batteries that can be used include lithium ion secondary batteries and lithium ion batteries. In addition to such batteries, the battery 170 may also include A protection circuit may be provided to prevent overcharging and over-discharging of the battery.

[0095] When used indoors, an alternating current (AC) power source may be used as the external power source. When the electronic device 100 is used separately from an external power source, the charge and discharge capacity is large and the charge and discharge capacity is long. It is desirable to have a battery 170 that can operate the electronic device 100 for a long period of time. When charging the electronic device 100, a charger capable of supplying power to the electronic device 100 may be used. When using the USB (Universal Serial Bus) connector or AC adapter, Charging can be performed using a wired method, electric field coupling method, electromagnetic induction method, electromagnetic resonance method (electromagnetic The charging may be performed by a wireless power supply method such as a resonant coupling method.

[0096] The battery controller 171 includes, for example, a battery management unit (BMU). The BMU collects data on the cell voltage and temperature of the battery, and detects overcharging and overdischarging. Monitoring, cell balancer control, battery deterioration management, battery remaining capacity (State of Charge rge:SOC calculation and fault detection control.

[0097] The battery controller 171 receives power from the battery 170 via a power supply line (not shown). The battery controller 171 controls the power supply to each component. For example, the power converter may have a multi-channel power converter, an inverter, a protection circuit, etc. It is possible.

[0098] The housing 101 in which the battery 170 is incorporated is flexible and can be bent for use. In some configurations, at least a portion of the battery 170 may also be flexible. A secondary battery that can be used as the battery 170 is, for example, a lithium ion secondary battery. and lithium ion polymer secondary batteries. To achieve this, it is advisable to use a laminated bag for the battery's outer container.

[0099] The film used for the laminated bag is a metal film (aluminum, stainless steel, nickel steel) ), plastic films made of organic materials, and organic materials (organic resins, fibers, etc.) and inorganic materials Hybrid material films containing organic materials (such as ceramics), carbon-containing inorganic films ( A single layer film selected from the group consisting of carbon film, graphite film, etc. A laminated film consisting of multiple layers is used. Metal films are easy to emboss, and By forming a concave or convex portion by boss processing, the surface area of ​​the film exposed to the outside air is increased. Therefore, it has excellent heat dissipation effect.

[0100] In particular, for laminated bags, metal film with concave and convex parts formed by embossing is used. When a laminated bag having such a structure is used, the strain caused by the stress applied to the laminated bag is reduced. As a result, the laminated bag is prevented from breaking when the secondary battery is bent. This is preferable because it can effectively reduce problems such as cracking.

[0101] Moreover, it is preferable that the battery controller 171 has a power consumption reduction function. For example, as a power saving function, the electronic device 100 may detect that there is no input for a certain period of time and then The clock frequency of the computing device 161 is reduced or the input of the clock is stopped, 161 itself, the auxiliary memory, and each component. In this way, the power supply to the power source can be reduced, thereby reducing the power consumption. Such functions may be performed by the battery controller 171 alone or in conjunction with the computing device 161. It can be executed.

[0102] The audio input device 104 includes, for example, a microphone and an audio input connector. The audio output device 102 includes, for example, a speaker and an audio output connector. 104 and the audio output device 102 are connected to a sound controller 169. The voice input device 104 is connected to the arithmetic unit 161 via the line 141. The voice data is converted into a digital signal in the sound controller 169, The sound controller 169 and the arithmetic unit 161 process the sound. 69 generates an audio signal audible to the user in response to a command from the computing device 161, and outputs the audio. The audio output device 102 has an audio output connector to which an earphone is connected. You can connect audio output devices such as a microphone, headphones, or headset, and connect the device to a sound controller. The voice generated by the controller 169 is output.

[0103] The communication device 162 can perform communication via an antenna 180. For example, the computing device 1 61 to connect the electronic device 100 to a computer network. The Wo The foundation of the rld Wide Web (WWW) is the Internet, intranets, and Xtranet, PAN (Personal Area Network), LAN (L ocal Area Network), CAN(Campus Area Network), CAN(Campus Area Network) rk), MAN (Metropolitan Area Network), WAN (W ide Area Network), GAN (Global Area Network) k) The electronic device 100 can be connected to a computer network such as the above to perform communication. In addition, when multiple communication methods are used, the antenna 180 is Depending on the law, there may be more than one.

[0104] The communication device 162 is provided with, for example, a high-frequency circuit (RF circuit) for transmitting and receiving RF signals. High-frequency circuits communicate electromagnetic and electrical signals in the frequency bands specified by the laws of each country. A circuit that converts electromagnetic signals into one another and communicates wirelessly with other communication devices using those signals. A practical frequency band that is generally used is from several tens of kHz to several tens of GHz. The high-frequency circuit connected to the antenna 180 has circuit parts corresponding to a plurality of frequency bands. The circuit section includes an amplifier, mixer, filter, DSP, RF transceiver, etc. When wireless communication is performed, a communication protocol or a communication technology may be used. LTE (Long Term Evolution), GSM (Global System system for Mobile Communication (registered trademark), EDG E(Enhanced Data Rates for GSM Evolution) , CDMA2000(Code Division Multiple Access 2000), WCDMA (Wideband Code Division Multi ple Access (registered trademark), Wi-Fi (registered trademark), Communication standards by IEEE such as Bluetooth (registered trademark) and ZigBee (registered trademark) A standardized specification can be used.

[0105] The communication device 162 may also have a function of connecting the electronic device 100 to a telephone line. When making a call through a telephone line, the communication device 162 receives a command from the arithmetic device 161. In response to the signal, the electronic device 100 is controlled to connect to a telephone line. Call the voice line.

[0106] The communication device 162 receives broadcast waves via an antenna 180 and outputs the signals to the display device 110. For example, the tuner may include a demodulation circuit and a configuration having an AD conversion circuit (analog-to-digital conversion circuit), a decoder circuit, etc. The demodulation circuit has a function of demodulating a signal input from the antenna 180. The AD conversion circuit also has the function of converting the demodulated analog signal into a digital signal. The decoder circuit also decodes the video data contained in the digital signal and controls the display. It has the function of generating a signal to be transmitted to device 164.

[0107] The decoder may also have a splitting circuit and a plurality of processors. It has the function of dividing the input video data spatially and temporally and outputting it to each processor. The processors decode the input video data and send it to the display control device 164. In this way, the decoder generates a signal to be transmitted by multiple processors. By applying a configuration that processes multiple signals in parallel, it is possible to decode video data with a very large amount of information. In particular, when displaying images with a resolution exceeding full HD, The decoder circuit that decodes the compressed data is a processor with extremely high processing speed. For example, the decoder circuit has four or more, preferably eight or more. More preferably, the configuration includes a plurality of processors capable of 16 or more parallel processes. The decoder also separates the video signal contained in the input signal from the other signals. It may also have a circuit for separating the information (text information, program information, authentication information, etc.).

[0108] The broadcasting waves that can be received by the antenna 180 include terrestrial waves and satellite broadcasts. The broadcasting radio waves that can be received by the antenna 180 include analog There are broadcasts, digital broadcasts, video and audio broadcasts, and audio-only broadcasts. For example, UHF band (approximately 300MHz to 3GHz) or VHF band (30MHz to 300M It is possible to receive broadcast radio waves transmitted in a specific frequency band of 100 Hz. For example, the transfer rate can be increased by using multiple data received in multiple frequency bands. This allows you to see more information than ever before, going beyond full HD. The display device 110 can display an image having a resolution of, for example, 4K2K. It can display images with resolutions of 8K4K, 16K8K, or higher. .

[0109] The tuner also transmits data via computer networks using data transmission technology. A configuration may be adopted in which a signal to be transmitted to the display control device 164 is generated using broadcast data. In this case, if the received signal is digital, the tuner uses a demodulation circuit and an A -D conversion circuit may not be included.

[0110] The attitude detection unit 165 has a function of detecting the inclination, attitude, etc. of the electronic device 100. The momentum detection unit 165 may include an acceleration sensor, an angular velocity sensor, a vibration sensor, a pressure sensor, a jack, etc. A combination of multiple sensors can also be used. good.

[0111] The external interface 168 may be, for example, one or more buttons provided on the housing 101. External ports to which input components such as switches (also called chassis switches) can be connected The external interface 168 is connected to the bus line 141. The switch is connected to the device 161. The switch is connected to the device 161 for turning the power on and off. buttons for adjusting the volume, and a button for taking pictures with the camera.

[0112] The external interface 168 has an external port, for example, a computer or a processor. The printer can be connected to an external device via a cable. There are also external ports such as a USB port. Network) connection terminal, digital broadcast reception terminal, AC adapter connection terminal In addition to wired communication, optical communication using infrared light, visible light, ultraviolet light, etc. may also be used. A transceiver for communication may be provided.

[0113] The image pickup device 105 is connected to a computing device 161 via a bus line 141. In response to a switch being pressed or a touch operation on the touch sensor 131, The imaging device 105 can capture still or moving images. For example, lamps such as xenon lamps, light emitting devices such as LEDs and organic ELs, etc. Alternatively, the display device 110 may be used as a light source for photography. In this case, light of various colors, not just white, may be used for imaging.

[0114] The vibration device 166 includes a vibration element that vibrates the electronic device 100 and a vibration controller that controls the vibration element. The vibration element includes a vibration motor (eccentric motor), a resonance actuator, and a Elements that can convert electric or magnetic signals into vibrations, such as magnetostrictive elements, piezoelectric elements, etc. Children can be used.

[0115] The vibration device 166 controls the frequency and amplitude of the vibration of the vibration element in response to an instruction from the computing device 161. By controlling the period of vibration, the electronic device 100 can be vibrated in various vibration patterns. For example, vibrations linked to the operation of a switch on the housing of an electronic device can be generated. Vibration linked to the startup of 00, and linked to video and audio played in video playback applications vibration linked to the arrival of an e-mail; vibration linked to an input operation to the touch sensor 131; Various vibration patterns based on the actions performed in various applications, such as vibration generated by the The vibrations can be generated by a vibration device 166.

[0116] The sensor module 167 includes a sensor unit and a sensor controller. The controller supplies power to the sensor unit from a battery 170 or the like. The controller receives input from the sensor unit, converts it into a control signal, and transmits it to the bus line 141. The sensor controller outputs the signal to the arithmetic unit 161 via the You can also perform a calibration process for the sensor unit. The controller may be configured to include a plurality of controllers for controlling the sensor units.

[0117] The sensor module 167 detects, for example, force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, Distance, light, liquid, magnetic, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation Various sensors that have the function of measuring line, flow rate, humidity, gradient, vibration, odor, or infrared rays It may be configured to include the above.

[0118] An example of the hardware configuration applicable to electronic device 100 has been described above.

[0119] <Display device 110> 4A is a perspective view of the display device 110. FIG. 4B is a plan view of the display device 110. As described above, the display device 110 includes a display area 111, a display area 112, and a display The display area 111, the display area 112, and the display area 113 are Each of them has a plurality of pixels 230 arranged in a matrix.

[0120] When the pixels 230 are arranged in a 1920 x 1080 matrix, it becomes what is called a full high-definition image. (also called "2K resolution", "2K1K", "2K", etc.) In addition, for example, the pixel size can be set to 3840×2160. When arranged in a matrix, it becomes what is known as ultra-high definition (4K resolution, 4K2 It is also called "K", "4K", etc. For example, if the pixels are arranged in a 7680 x 4320 matrix, So-called super high vision (also called "8K resolution", "8K4K", "8K", etc.) It is possible to realize a display device 110 capable of displaying at a resolution of 1080 x 1080 pixels. It is also possible to realize a display device 110 capable of displaying images at a resolution of 16K or 32K.

[0121] The display device 110 also has an input terminal 121, an input terminal 122, and an input terminal 123. The input terminal 121 is electrically connected to the display area 111. The input terminal 122 is The input terminal 123 is electrically connected to the display area 113. This is being continued.

[0122] The input terminals 121, 122, and 123 are connected to the display control device 16. The display control device 164 is electrically connected to the display area 111, the display area 112, and the display area 113, each of which has a function of supplying a signal for displaying an image. .

[0123] A signal for displaying an image on the display area 111 is input to the display area 111 via an input terminal 121. A signal for displaying an image in the display area 112 is supplied to A signal for displaying an image on the display area 113 is supplied to the input terminal The image is supplied to the display area 113 via 123.

[0124] The input terminals 121, 122, and 123 are bent within the housing 101, and the circuit It is electrically connected to a display control device 164 provided on the substrate 160 .

[0125] The display device 110 has a curved region 114 between the display region 111 and the display region 112. The display device 110 has a curved region 115 between the display region 111 and the display region 113. is bent at bending region 114 and bending region 115 and placed in housing 101, A display area 111 can be arranged on the front surface of the electronic device 100. A display area 112 can be arranged on the left side of the electronic device 100. A display area 113 can be arranged on the right side of the display unit 110 .

[0126] In addition, the curved region 114 and the curved region 115 include the display region 111, the display region 112, and And / or no wiring or electrodes for transmitting signals to the display area 113 are provided. In the region 114, wiring and electrodes for electrically connecting the display region 111 and the display region 112 are provided. In addition, the display area 111 and the display area 113 are electrically connected to the bending area 115. No wiring or electrodes are provided for this purpose.

[0127] FIG. 5 is a perspective view of the display device 110 bent at the bending region 114 and the bending region 115. FIG. 1 shows the bending region 114 and the bending region 115. Even if the curvature radius R of the display device 11 is reduced, the display device 11 may be damaged due to short circuits or breaks in the wiring or electrodes. No malfunction or deterioration of reliability occurs. Specifically, the radius of curvature R is set to 1 mm or less. Alternatively, the radius of curvature R can be set to 0.5 mm or less. The radius of curvature R can be set to 0.1 mm or less.

[0128] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0129] (Embodiment 2) In this embodiment, a specific configuration example of the display device 110 of one embodiment of the present invention will be described. do.

[0130] FIG. 6A is a block diagram illustrating a configuration example of the display device 110. The display device 110 is In addition, a circuit 232a may be provided between the input terminal 121 and the display area 111. A circuit 233a may be provided between the terminal 121 and the display area 111. A circuit 232b may be provided between the input terminal 122 and the display area 112. A circuit 233b may be provided between the input terminal 123 and the display area 112. A circuit 232c may be provided between the input terminal 123 and the display area 113. 3, a circuit 233c may be provided between the first and second electrodes.

[0131] The circuit 232a, the circuit 232b, and the circuit 232c function as, for example, a scanning line driving circuit. The circuit 233a, the circuit 233b, and the circuit 233c are, for example, signal line driving circuits. The circuit 232a, the circuit 232b, the circuit 232c, the circuit 233a, and the circuit 233b The circuit 233c may be collectively referred to as a drive circuit section. It may be provided within the area.

[0132] In addition, a part or the whole of the driving circuit may be integrated into an IC and mounted on the display device 110. ,In ,Figure 7(A), ,IC373a,I 3 shows a perspective view of a display device 110 on which C373b and IC373c are mounted.

[0133] In addition, at least one of the display area 112 and the display area 113 may be omitted. 7B shows a perspective view of a display device 110 that does not have a display region 113.

[0134] Next, configuration examples of the display area 111, the circuit 232a, and the circuit 233a will be described. In addition, the display area 112, the circuit 232b, the circuit 233b, and the display area 11 3, the circuit 232c, and the circuit 233c also include the display area 111, the circuit 232a, and the circuit A configuration similar to that of 233a can be used.

[0135] <Configuration example 1> FIG. 6B illustrates a configuration example of the display region 111, the circuit 232a, and the circuit 233a. FIG.

[0136] The display area 111 also has m wirings 235 and n wirings 236. The wirings 235 are arranged approximately in parallel with each other, and the potentials of the wirings 235 are controlled by the circuit 232a. The n wirings 236 are arranged approximately in parallel with each other, and the potentials of the wirings 236 are controlled by the circuit 233a. Furthermore, the display area 111 has a plurality of pixels 230 arranged in a matrix. .

[0137] Each of the wirings 235 is connected to any one of the pixels 230 arranged in m rows and n columns in the display area 111. Each of the wirings 236 is electrically connected to the n pixels 230 arranged in one row. Among the pixels 230 arranged in m rows and n columns, m pixels 230 arranged in any one of the columns They are electrically connected. Both m and n are integers of 1 or more.

[0138] The pixel 230 includes a pixel circuit 237 and a display element 225. The transistors in the driving circuit section drive the pixel circuit 237. The transistors can be formed simultaneously with the transistors. A part or the whole of the driver circuit is formed on the same substrate as the pixel circuit by using transistors. A system on panel can be formed.

[0139] In addition, a part or the whole of the driving circuit section is formed on another substrate, and electrically connected to the display device 110. For example, a part or the whole of the driver circuit may be formed using a single crystal substrate. It may be electrically connected to the display device 110 .

[0140] In addition, a pixel 230 emits or reflects red light, a pixel 240 emits or reflects green light, and 30, and pixel 230 that emits or reflects blue light function together as one pixel. By controlling the amount of light emitted by each pixel, a full-color display can be achieved. Therefore, the three pixels function as sub-pixels. The colors of reflected light are not limited to a combination of red, green, and blue, but can also be yellow, cyan, and magenta. Good too.

[0141] In addition, four sub-pixels may be combined to function as one pixel. For example, red light, green light, The three sub-pixels emit or reflect red, blue, and white light, respectively, while the By adding sub-pixels that emit or reflect white light, the display can be By increasing the number of sub-pixels that function as one pixel, the brightness of the display area can be increased. The sub-pixels that emit or reflect light, such as red, green, blue, yellow, cyan, and magenta, are appropriately By using them in combination, the reproducible color gamut can be expanded.

[0142] [Display element] The display device according to one embodiment of the present invention may have various forms or various display elements. An example of a display element is an electroluminescence (EL) element (organic EL elements, including inorganic and inorganic materials, organic EL elements, inorganic EL elements), LEDs (white LEDs, Red LED, green LED, blue LED, etc.), transistors (transistors that emit light according to the current Transistors), electron emission elements, liquid crystal elements, electronic ink, electrophoretic elements, grating lights Using Gate Valve (GLV) and MEMS (Micro Electro Mechanical System) Display element, digital micromirror device (DMD), digital micro-shutter DMS, MIRASOL, Interferometric Modulator Interferometric Modulation (IMOD) element, shutter-type MEMS display element, optical interference MEMS display Display element, electrowetting element, piezoelectric ceramic display, carbon nanotube Display elements using tubes, etc., that use electrical or magnetic effects to change contrast, brightness, There are display media that change reflectance, transmittance, etc. Also, quantum dots are used as display elements. An example of a display device using an EL element is an EL display. One example of a display device using electron emission elements is the field emission display (F ED) or surface-cond Quantum An example of a display device using dots is a quantum dot display. An example of a display device using the liquid crystal display (transmissive liquid crystal display, semi-transmissive liquid crystal display, LCD display, reflective LCD display, direct-view LCD display, projection LCD display Electronic ink, electronic powder, or electrophoretic elements are used. An example of the display device used is electronic paper. The display panel may be a PDP.

[0143] In order to realize a semi-transmissive or reflective LCD, the pixel voltage must be A part or the whole of the electrode may function as a reflective electrode. For example, A part or the whole of the pixel electrode may be made of aluminum, silver, or the like. In this case, it is also possible to provide a memory circuit such as an SRAM under the reflective electrode. This further reduces power consumption.

[0144] When using an LED, graphene or graphene is placed under the LED electrode or nitride semiconductor. Graphene and graphite can be arranged in layers to form a multilayer film. In this way, by providing graphene or graphite, it is possible to form a nitride on the graphene or graphite. Semiconductors, for example, n-type GaN semiconductor layers having crystals can be easily formed. Furthermore, a p-type GaN semiconductor layer having crystals is formed on top of it to form an LED. In addition, the graphene or graphite and the n-type GaN semiconductor layer having crystals can be An AlN layer may be provided between the GaN and the GaN layers. Metal Organic Chemical Vapor Deposition) However, by providing graphene, the GaN semiconductor of the LED can be formed. The dielectric layer can also be formed by sputtering.

[0145] 8(A) and 8(B) show examples of circuit configurations that can be used for the pixel 230. do.

[0146] [An example of a pixel circuit for a light-emitting display device] The pixel circuit 237 shown in FIG. 8A includes a transistor 431, a capacitor 438, and a transistor The pixel circuit 237 includes a display element In FIG. 8A, a light-emitting element is used as the display element 225. 2 shows a pixel circuit 237 in this case.

[0147] One of the source and drain of the transistor 431 is connected to a wiring to which a data signal is applied (hereinafter, Further, the gate of the transistor 431 is electrically connected to the signal line DL_n. The gate is electrically connected to a line (hereinafter referred to as a scanning line GL_m) to which a gate signal is applied. do.

[0148] The transistor 431 has a function of controlling writing of a data signal to the node 435. .

[0149] One of a pair of electrodes of the capacitor 438 is electrically connected to the node 435, and the other is In addition, the source and drain of the transistor 431 are electrically connected to the gate 437. One is electrically connected to node 435 .

[0150] The capacitor 438 functions as a storage capacitor that stores data written to the node 435. has.

[0151] One of the source and drain of the transistor 433 is electrically connected to the potential supply line VL_a. The other end is electrically connected to a node 437. The output is electrically connected to node 435.

[0152] One of the source and drain of the transistor 434 is electrically connected to the potential supply line V0. The other end is electrically connected to a node 437. In addition, the gate of the transistor 434 is , and is electrically connected to the scanning line GL_m.

[0153] One of the anode and the cathode of the light-emitting element (display element 225) is connected to the potential supply line VL_b. one electrically connected to node 437 and the other electrically connected to node 437.

[0154] The light-emitting element may be, for example, an organic electroluminescence element (also called an "organic EL element"). However, the light-emitting element is not limited to this, and may be, for example, an inductively coupled The light-emitting element may be an inorganic EL element made of an organic material. In addition to visible light, it can also emit infrared light and ultraviolet light.

[0155] For example, a high power supply potential VDD is applied to one of the potential supply lines VL_a and VL_b. and the other is supplied with a low power supply potential VSS.

[0156] In a display device having the pixel circuit 237 of FIG. 8A, for example, the circuit 232a The element circuits 237 are sequentially selected, and the transistors 431 and 434 are turned on. 435 to write the data signal to node 435.

[0157] The pixel circuit 237 in which data is written to the node 435 is connected to the transistor 431 and the transistor The transistor 434 is turned off, which results in a holding state. A current flows between the source and drain of the transistor 433 according to the potential of the input data. The amount of current flowing through the light emitting element is controlled, and the light emitting element emits light with a luminance that corresponds to the amount of current flowing through the light emitting element. By doing so, an image can be displayed.

[0158] [An example of a pixel circuit for a liquid crystal display device] The pixel circuit 237 shown in FIG. 8B includes a transistor 431 and a capacitor 438. FIG. 8B shows a pixel circuit 237 in which a liquid crystal element is used as the display element 225. is doing.

[0159] The potential of one of the pair of electrodes of the display element 225 (liquid crystal element) is set according to the specifications of the pixel circuit 237. The display element 225 (liquid crystal element) is set appropriately based on the data written to the node 436. The alignment state is set by the display element of each of the pixel circuits 237. A common potential may be applied to one of the pair of electrodes 225. A different potential may be applied to one of a pair of electrodes of the display element 225 for each pixel circuit 237 .

[0160] Examples of driving methods for a display device including a liquid crystal element include TN mode, STN mode, V A mode, ASM (Axially Symmetric Aligned Micro -cell) mode, OCB (Optically Compensated Bire fringence mode, FLC (Ferroelectric Liquid C rystal) mode, AFLC (AntiFerroelectric Liquid Crystal mode, MVA mode, PVA (Patterned Vertic al Alignment) mode, IPS mode, FFS mode, or TBA (Tr Anverse Bend Alignment mode may also be used. In addition to the above-mentioned driving method, the display device can be driven by an ECB (Electric All y Controlled Birefringence mode, PDLC (Poly mer Dispersed Liquid Crystal) mode, PNLC (Po lymer Network Liquid Crystal) mode, guest host mode However, there are various types of liquid crystal elements and their driving methods, and they are not limited to these. can be used.

[0161] In addition, a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent The display element 225 (liquid crystal element) may be configured with the above. The liquid crystal exhibiting the blue phase has a response speed of It is short (less than 1 msec), has optical isotropy, does not require alignment treatment, and does not depend on viewing angle. The reliability is low.

[0162] In the pixel circuit 237 in the mth row and the nth column, one of the source and drain of the transistor 431 One is electrically connected to the signal line DL_n, and the other is electrically connected to a node 436 . The gate of the transistor 431 is electrically connected to the scan line GL_m. 31 has a function of controlling the writing of a data signal to the node 436 .

[0163] One of a pair of electrodes of the capacitor 438 is connected to a wiring (capacitor line CL) to which a specific potential is supplied. The other end is electrically connected to a node 436. The other of the pair of electrodes of the liquid crystal element is electrically connected to the node 436. The value of the potential is appropriately set according to the specifications of the pixel circuit 237. The memory cell 436 functions as a storage capacitor for storing data written in the memory cell 436 .

[0164] For example, in a display device having the pixel circuit 237 shown in FIG. 8B, The pixel circuits 237 in each row are selected in sequence, and the transistors 431 are turned on to set the node 436 Write the data signal to

[0165] In the pixel circuit 237 in which a data signal is written to the node 436, the transistor 431 is turned off. By performing this process for each row, the display area 111 is Images can be displayed.

[0166] <Configuration example 2> Next, as the display element 225, a liquid crystal element of a reflective type and a light-emitting element are both included, and a transmissive mode is used. An example of the configuration of the display area 111 capable of performing display in both the transparent and reflective modes will be described.

[0167] FIG. 9A illustrates a configuration example of the display region 111, the circuit 232a, and the circuit 233a. The display area 111 includes a plurality of pixels 230 arranged in a matrix, a plurality of Wiring G1, multiple wiring G2, multiple wiring ANO, multiple wiring CSCOM, multiple wiring S 1 and a plurality of wirings S2. Wirings G1, G2, ANO, and CSC The OM is electrically connected to the pixels 230 arranged in the direction R and the circuit 232a. 1 and the wiring S2 are electrically connected to a plurality of pixels 230 arranged in the direction C and the circuit 233a. do.

[0168] Although FIG. 9A illustrates a configuration including one circuit 232a and one circuit 233a, , a circuit 232a and a circuit 233a for driving a liquid crystal element, and a circuit 23 2a and the circuit 233a may be provided separately.

[0169] The pixel 230 includes a reflective liquid crystal element and a light emitting element. The element and the light-emitting element have an overlapping portion.

[0170] FIG. 9B1 shows a configuration example of the electrode 311 of the pixel 230. The electrode 311 functions as a reflective electrode for the liquid crystal element in the liquid crystal display device 30. An opening 451 is provided in the electrode 311. It is being done.

[0171] In FIG. 9B1, the light emitting element 360 located in the area overlapping with the electrode 311 is shown by a dashed line. The light emitting element 360 is disposed so as to overlap with an opening 451 of the electrode 311. As a result, the light emitted by the light emitting element 360 is emitted to the display surface side through the opening 451.

[0172] In FIG. 9(B1), pixels 230 adjacent in the direction R are pixels corresponding to different luminescent colors. At this time, as shown in FIG. 9B1, in two pixels adjacent to each other in the direction R, the openings 45 It is preferable that the electrodes 311 are provided at different positions so that the electrodes 311 are not arranged in a line. This allows the two light emitting elements 360 to be spaced apart, and the light emitted by the light emitting elements 360 The phenomenon whereby light from the adjacent pixel 230 enters the colored layer of the adjacent pixel 230 (also called "crosstalk") In addition, by arranging two adjacent light emitting elements 360 apart from each other, Therefore, in the case where the EL layer of the light emitting element 360 is separately produced by using a shadow mask or the like, Even so, a high-definition display device can be realized.

[0173] In addition, an arrangement as shown in FIG. 9(B2) may also be used.

[0174] If the ratio of the total area of ​​the openings 451 to the total area of ​​the non-openings is too large, In addition, the ratio of the total area of ​​the openings 451 to the total area of ​​the non-openings is If the value is too small, the display using the light emitting element 360 will be too dim.

[0175] Moreover, if the area of ​​the opening 451 provided in the electrode 311 functioning as a reflective electrode is too small, the light emission This reduces the efficiency with which light can be extracted from the light emitted by the optical element 360.

[0176] The shape of the opening 451 may be, for example, a polygon, a rectangle, an ellipse, a circle, a cross, or the like. It may also be in the form of thin stripes, slits, or a checkered pattern. The apertures 451 may be arranged close to adjacent pixels. Preferably, the apertures 451 are arranged so that they display the same color. In this way, crosstalk can be suppressed.

[0177] [Circuit configuration example] FIG. 10 is a circuit diagram showing a configuration example of the pixel 230. In FIG. 10, two adjacent pixels 230 It shows 30.

[0178] The pixel 230 includes a switch SW1, a capacitance element C1, a liquid crystal element 340, a switch SW2, a transistor The pixel 230 includes a transistor M, a capacitance element C2, and a light emitting element 360. Wire G1, wire G2, wire ANO, wire CSCOM, wire S1, and wire S2 are electrically 10, a wiring VCOM electrically connected to the liquid crystal element 340 is 1 and a wiring VCOM2 electrically connected to the light-emitting element 360.

[0179] FIG. 10 shows an example in which transistors are used for the switches SW1 and SW2. It shows.

[0180] The switch SW1 has a gate connected to the line G1 and a source or drain connected to the line S 1, and the other of the source and drain is connected to one electrode of the capacitance element C1 and the liquid crystal element The other electrode of the capacitance element C1 is connected to the wiring C SCOM The other electrode of the liquid crystal element 340 is connected to the wiring VCOM1.

[0181] The switch SW2 has a gate connected to the line G2 and a source or drain connected to the line S 2, and the other of the source and drain is connected to one electrode of the capacitance element C2, The other electrode of the capacitance element C2 is connected to the source of the transistor M. The transistor M is connected to the source or drain of the transistor M, and to the wiring ANO. Alternatively, the other of the drains is connected to one of the electrodes of the light emitting element 360. The other electrode of the second electrode is connected to the wiring VCOM2.

[0182] In FIG. 10, a transistor M has two gates that sandwich a semiconductor and are connected together. This increases the current that the transistor M can pass. This can be done.

[0183] A signal that controls the switch SW1 to be in a conductive or non-conductive state is applied to the wiring G1. A predetermined potential can be applied to the wiring VCOM1. A signal for controlling the alignment state of the liquid crystal of the element 340 can be applied. M can be given a predetermined potential.

[0184] A signal that controls the switch SW2 to be in a conductive or non-conductive state is applied to the wiring G2. A potential difference that causes the light emitting element 360 to emit light is generated between the wiring VCOM2 and the wiring ANO. A potential that controls the conduction state of the transistor M can be applied to the wiring S2. A signal can be provided to control the

[0185] In the pixel 230 shown in FIG. 10, when performing a display in a reflective mode, the wiring G1 and the wiring The liquid crystal element 340 is driven by a signal applied to the line S1, and optical modulation is used to display the image. In addition, when displaying in a transmissive mode, the wiring G2 and the wiring S2 are provided with The light emitting element 360 can be driven by a signal to emit light for display. When driving the device with a mode, the wiring G1, the wiring G2, the wiring S1, and the wiring S2 are given The input signal can be driven by a signal.

[0186] In FIG. 10, one pixel 230 includes one liquid crystal element 340 and one light emitting element 360. 11A shows an example in which one pixel 230 has one The liquid crystal element 340 and the four light-emitting elements 360 (light-emitting elements 360r, 360g, 360b, 11(A) shows an example having a pixel 230 having a pixel width of 0w. The pixel 230 shown in FIG. 11(A) is different from the pixel 230 shown in FIG. A single pixel is capable of displaying full color.

[0187] In FIG. 11A, in addition to the example of FIG. 10, a line G3 and a line S3 are connected to the pixel 230. is.

[0188] In the example shown in FIG. 11A, for example, four light emitting elements 360 are arranged to emit red (R), Light-emitting elements that exhibit green (G), blue (B), and white (W) colors can be used. A reflective liquid crystal element that exhibits white color can be used as the liquid crystal element 340. Therefore, when performing display in the reflective mode, white color with high reflectance can be displayed. In addition, when displaying in a transmissive mode, it is possible to achieve high color rendering with low power consumption. .

[0189] 11B shows a configuration example of the pixel 230. The pixel 230 has an electrode 311 The light emitting element 360w overlaps with the opening of the electrode 311, and the light emitting element 3 The light emitting element 360r, the light emitting element 360g, and the light emitting element 360b. It is preferable that the light emitting element 360g and the light emitting element 360b have substantially the same light emitting area. .

[0190] [Example of cross-sectional structure] Next, an example of the cross-sectional structure of the display device 110 will be described with reference to FIGS. Although the display area 111 will be described here, the display area 112 and the display area 113 can also have a similar configuration.

[0191] FIG. 12A shows a cross section of the input terminal 121, the circuit 233a, and the display area 111. The circuit 233a includes a transistor 4010, and the display area 111 includes a transistor 4020. 011 and a transistor 4012. 012 is provided on the insulating layer 4102.

[0192] FIG. 12B is a cross-sectional view of the transistor 4010. The transistors 4010 and 4012 have the same configuration. 46, the electrode 244a, the electrode 244b, the electrode 223, the semiconductor layer 242, and the insulating layer 226 The electrode 223 is formed over the insulating layer 4102, and the insulating layer 4103 is formed over the electrode 223. The semiconductor layer 242 is formed on the insulating layer 4103. An edge layer 226 is formed and an electrode 246 is formed on the insulating layer 226 .

[0193] The electrode 246, the insulating layer 226, and the semiconductor layer 242 are formed by insulating layers 4104 and 41 The electrode 244a and the electrode 244b are provided on the insulating layer 4105. The electrode 244a is formed through an opening provided in a part of the insulating layer 4104 and the insulating layer 4105. In the semiconductor layer 242, the electrode 244b is electrically connected to a part of the insulating layer 244. In the openings provided in the insulating layer 4104 and the other part of the insulating layer 4105, It is electrically connected to another part.

[0194] The electrode 246 and the semiconductor layer 242 have an overlapping area with the insulating layer 226 interposed therebetween. The electrode 223 and the semiconductor layer 242 have an overlapping region with the insulating layer 4103 interposed therebetween. Electrode 246 can function as a gate electrode. Electrode 223 can function as a back gate electrode. The electrode 244a can function as either a source electrode or a drain electrode. The insulating layer 226 can function as the other of the source electrode and the drain electrode. The transistor 4010 shown in FIG. In the transistor 4012, a channel is formed in a region overlapping with the electrode 246 in the semiconductor layer 242. The region in which the channel of the semiconductor layer 242 is formed is called the "channel formation region." Also called.

[0195] In addition, both the electrode 246 and the electrode 223 can function as a gate electrode. Both electrode 226 and insulating layer 4103 can function as gate insulating layers. One of the electrodes 46 and 223 is called the "gate" or "gate electrode," and the other is called the "back gate." The first gate electrode is called the "first gate electrode" or the "back gate electrode." The first electrode is sometimes referred to as the "electrode" and the other as the "second gate electrode."

[0196] By providing a gate electrode and a back gate electrode on either side of the semiconductor layer, the gate voltage By setting the electrode and back gate electrode at the same potential, the area in the semiconductor layer where carriers flow is Since the thickness of the film increases, the amount of carrier movement increases. Therefore, the on-current of the transistor is large relative to the area it occupies. That is, the occupancy rate of the transistor can be reduced by the required on-current. The area can be reduced, and therefore a highly integrated semiconductor device can be realized. do.

[0197] In addition, since the gate electrode and the back gate electrode are formed of a conductive layer, they can be electrically connected to the outside of the transistor. The function of preventing the electric field generated from acting on the channel formation region (especially against static electricity, etc.) The back gate electrode is formed larger than the semiconductor layer, By covering the semiconductor layer with the gate electrode, the electric field shielding function can be improved.

[0198] In addition, the gate electrode and the back gate electrode each have the function of blocking an electric field from the outside. Therefore, the charges of charged particles generated outside the two layers affect the channel formation region of the semiconductor layer. As a result, stress tests (e.g. applying a negative charge to the gate - GBT(M Degradation due to inus Gate Bias-Temperature stress test In addition, the gate electrode and the back gate electrode are prevented from being affected by the electric field generated from the drain electrode. The electric field can be blocked so that the drain voltage does not act on the semiconductor layer. It is possible to suppress the fluctuation of the on-state current rise voltage caused by the fluctuation of the on-state current. This effect is remarkable when a potential is applied to the gate electrode and the back gate electrode. occurs in.

[0199] The BT stress test is a type of accelerated test that measures the transistor damage caused by long-term use. It is possible to evaluate the characteristic changes (aging) of the stator in a short time. The amount of change in the threshold voltage of a transistor before and after the test is an important indicator for examining reliability. The smaller the threshold voltage fluctuation, the more reliable the transistor is. .

[0200] The semiconductor device further includes a gate electrode and a back gate electrode. By making the electrodes have the same potential, the variation in threshold voltage is reduced. At the same time, the variation in electrical characteristics between transistors is reduced.

[0201] In addition, a transistor with a back gate electrode is called a +GBT, which applies a positive charge to the gate. The change in threshold voltage before and after the stress test was also observed for transistors without a back gate electrode. Smaller than Sta.

[0202] In addition, by forming the back gate electrode using a conductive film having a light-shielding property, This can prevent light from entering the semiconductor layer from the side. This prevents the semiconductor layer from being photodegraded. This can prevent degradation of electrical characteristics, such as a shift in the threshold voltage of a transistor. .

[0203] Depending on the purpose or application, the electrode 223 may not be provided.

[0204] In addition, the display device 110 shown in FIG. 12A includes a capacitor 4020a and a capacitor 402 The capacitor 4020a has a source electrode or a drain electrode of the transistor 4012. The electrode 4021 has a region where one part of the electrode 4021 overlaps with the insulating layer 4103 interposed therebetween. The electrode 4021 is formed of the same conductive layer as the electrode 223. The transistor 4012 has a similar structure to the element 4020a. The transistor 4011 has a function of driving the liquid crystal element 340 .

[0205] The transistor 4012 is electrically connected to the light-emitting element 360. An EL element is used as the element 360 .

[0206] An EL element has a layer containing a light-emitting compound between a pair of electrodes (also called an "EL layer"). When a potential difference larger than the threshold voltage of the EL element is generated between the pair of electrodes, Holes are injected from the anode side, and electrons are injected from the cathode side. The injected electrons and holes are called EL The electrons recombine in the layer, causing the luminescent material contained in the EL layer to emit light.

[0207] EL elements are also classified according to whether the luminescent material is an organic compound or an inorganic compound. In general, the former is called an organic EL element, and the latter is called an inorganic EL element.

[0208] When a voltage is applied to an organic EL element, electrons are emitted from one electrode and holes are emitted from the other electrode. are injected into the EL layer. Then, the carriers (electrons and holes) recombine. This causes the light-emitting organic compound to form an excited state, which then returns to the ground state. Due to this mechanism, this type of light-emitting element is called a current-excited light-emitting element. is called a child.

[0209] In addition to the light-emitting compound, the EL layer may also include a material having a high hole-injecting property and a material having a high hole-transporting property. , hole blocking material, material with high electron transporting ability, material with high electron injecting ability, or bipolar The insulating layer may include a material having high electron-transporting and hole-transporting properties.

[0210] The EL layer can be formed by a variety of methods, including deposition (including vacuum deposition), transfer, printing, inkjet, and coating. It can be formed in any way.

[0211] Inorganic EL elements are divided into dispersion-type inorganic EL elements and thin-film-type inorganic EL elements according to their element structure. Dispersion-type inorganic EL elements have a light-emitting layer in which particles of a light-emitting material are dispersed in a binder. The emission mechanism is a donor-acceptor reaction that utilizes the donor and acceptor levels. Thin-film inorganic EL elements are made by sandwiching a light-emitting layer between dielectric layers. The structure is sandwiched between electrodes, and the light emission mechanism utilizes the inner shell electron transition of metal ions. In this example, the light-emitting element is an organic EL element. do.

[0212] If at least one of the pair of electrodes is transparent in order to extract the light emitted from the light-emitting element, Then, a transistor and a light-emitting element are formed on a substrate, and the transistor and the light-emitting element are formed on the opposite side of the substrate. Top emission structure that extracts light, or emits light from the substrate side Bottom emission structure and dual emission structure that emits light from both sides There are light emitting elements with a mission structure, and light emitting elements with any emission structure can be applied.

[0213] The light emitting element 360 has a laminated structure of an electrode 4030, a light emitting layer 4511, and an electrode 4031. However, the present invention is not limited to this structure. Accordingly, the configuration of the light emitting element 360 can be changed as appropriate.

[0214] The partition 4510 is formed using an organic insulating material or an inorganic insulating material, particularly a photosensitive resin. An opening is formed on the electrode 4030 using a material, and the side of the opening has a continuous curvature. It is preferable to form the inclined surface so that the inclined surface is formed by the inclination.

[0215] The light-emitting layer 4511 may be composed of a single layer or a plurality of layers may be laminated. Either way is fine.

[0216] In order to prevent oxygen, hydrogen, moisture, carbon dioxide, etc. from entering the light emitting element 360, the electrodes 4031 and A protective layer may be formed on the partition 4510. The protective layer may be formed of silicon nitride, silicon oxide, or the like. Silicon oxide, aluminum oxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide It can form aluminum, DLC (Diamond Like Carbon), etc. In addition, a filler is placed in the space sealed by the substrate 4006 and the sealant 4005. 4514 is provided and sealed. In this way, it is highly airtight so that it is not exposed to the outside air. Protective films with little outgassing (laminated films, UV-cured resin films, etc.) It is preferable to package (enclose) it in a bar material.

[0217] Filler 4514 can be inert gas such as nitrogen or argon, or ultraviolet curing resin or Thermosetting resin can be used, and PVC (polyvinyl chloride), acrylic resin, poly Imide, epoxy resin, silicone resin, PVB (Polyvinyl Butyral) or EVA (ethylene vinyl acetate) or the like can be used. Agents may also be included.

[0218] The sealing material 4005 is made of glass materials such as glass frit, or two-liquid mixed resin. Resin materials such as heat-curable resin, photocurable resin, and thermosetting resin can be used. Also, the sealant 4005 may contain a desiccant.

[0219] In addition, by making the light-emitting element a microcavity structure, it is possible to extract light with high color purity. In addition, by combining a microcavity structure with a color filter, This reduces congestion and improves visibility of the displayed image.

[0220] An electrode 4030 for applying a voltage to the display element, and an electrode 4031 ("pixel electrode layer", "common The direction of the light to be extracted, the electrode The light transmission or reflectivity can be selected depending on the location where the layer is provided and the pattern structure of the electrode layer. stomach.

[0221] For example, the electrodes 4030 and 4031 may be made of indium oxide containing tungsten oxide. Indium zinc oxide containing tungsten oxide, Indium oxide containing titanium oxide , indium tin oxide, indium tin oxide containing titanium oxide, indium zinc oxide, Use a conductive material with light transmission, such as indium tin oxide doped with silicon oxide. can be done.

[0222] For example, the electrodes 4030 and 4031 may be made of tungsten (W), molybdenum ( Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb ), Tantalum (Ta), Palladium (Pd), Chromium (Cr), Cobalt (Co), Ni Nickel (Ni), Titanium (Ti), Platinum (Pt), Aluminum (Al), Copper (Cu), Silver (Ag) or other metals, their alloys, or their metal nitrides. It can be achieved.

[0223] For example, the electrode 4030 and the electrode 4031 may be made of a conductive polymer ("conductive polymer"). The conductive polymer may be formed by using a conductive composition containing a conductive polymer. For example, a so-called π-electron conjugated conductive polymer can be used. polypyrrole or its derivatives, polythiophene or its derivatives Derivatives, or copolymers or copolymers of two or more of aniline, pyrrole and thiophene. or their derivatives.

[0224] When the light emitting element 360 has a top emission structure, the electrode 4030 is made of a material having a high light reflectance. The conductive material is preferably a conductive material such as Al or Ag. In addition, conductive materials with high light reflectance and conductive materials with light transmissivity can be used. The electrode 4031 may be formed of a light-transmitting conductive material. stomach.

[0225] In addition, when the light emitting element 360 has a bottom emission structure, the electrode 4030 is made of a light-transmitting material. and the electrode 4031 is formed of a conductive material having a high light reflectance. good.

[0226] In addition, when the light emitting element 360 has a dual emission structure, the electrode 4030 and the electrode 4 The insulating film 031 may be formed of a light-transmitting conductive material.

[0227] In this embodiment, the light emitting element 360 has a bottom emission structure.

[0228] In addition, the display device 110 shown in FIG. 12A includes an electrode 311 below an insulating layer 4102, an insulating layer 4101, an electrode 4131, an alignment film 4032, a liquid crystal layer 4008, an alignment film 4033, a spacer 4035, electrode 4132, overcoat layer 4133, colored layer 4134, substrate 4001 , a light-shielding layer 4135 , and a polarizing plate 4136 .

[0229] In the display device 110 shown in FIG. 12A, the electrode 4015 is formed between the insulating layer 4101 and the insulating The electrode 4014 is electrically connected to the layer 4102 through an opening formed in the layer 4102. 14 is formed at the same time as the electrode 4022 in the same process.

[0230] The liquid crystal element 340 includes an electrode 4131, an electrode 4132, and a liquid crystal layer 4008. An alignment film 4032 and an alignment film 4033 are provided to sandwich the liquid crystal layer 4008. The electrode 4131 and the electrode 4132 overlap each other with the liquid crystal layer 4008 interposed therebetween. The electrode 4131 has an area overlapping with the electrode 311. The electrode 4131 also overlaps with the electrodes 4022 and and electrically connected to one of the source and drain of the transistor 4011 via the electrode 311. The electrode 311 has a function of reflecting visible light. It can be formed at the same time as 1 in the same process.

[0231] The spacer 4035 is a columnar spacer obtained by selectively etching an insulating layer. and is provided to control the distance (cell gap) between the electrodes 4131 and 4132. The spacers 4035 may be spherical.

[0232] The display device 110 shown in FIG. 12A is a light-emitting display device having a bottom emission structure. The light 45 generated by the light emitting element 360 is incident on the liquid crystal display device 30. The light 4521 incident from the substrate 4001 side is emitted from the substrate 4001 side. The light 4521 is reflected by the electrode 311 and emitted from the substrate 4001 side. When passing through the layer 4134, a specific wavelength range is absorbed, and the light 4521 has a different wavelength range. However, the wavelength range of the incident light 4521 is smaller than the wavelength range of the colored layer 4134. If the wavelength range of light 4522 is within the wavelength range of light 4521, the wavelength range of light 4522 is almost the same as that of light 4521.

[0233] The light 4520 may be white light or light having a specific wavelength range. For example, The light 4520 may be light having a wavelength range such as red, green, or blue. When passing through 4, certain wavelength ranges may be absorbed.

[0234] The display device 110 shown in FIG. 12(A) can be operated in three display modes. The first mode is a display mode in which the liquid crystal display device displays an image as a reflective type liquid crystal display device. The first mode is a display mode in which the display device displays an image as a light-emitting display device. This is a display mode in which the first mode and the second mode are operated simultaneously.

[0235] The first mode does not require a light source, and is therefore a display mode with extremely low power consumption. For example, This is effective when the illuminance of the external light is sufficiently high and the external light is white light or light close to white light. The first mode is a display mode suitable for displaying text information such as books and documents. In addition, because it uses reflected light, it is easy on the eyes and reduces eye fatigue. This has the effect of:

[0236] The second mode is extremely vivid (high contrast and This display mode allows for high-quality display with excellent color reproduction. This is effective when the illuminance of external light is extremely low, such as when the illuminance of external light is low. A bright display can be dazzling to the user. To prevent this, the second In this mode, it is preferable to display with reduced brightness. This also helps to reduce glare. The second mode provides a clearer image and smoother playback. This mode is suitable for displaying moving images, etc.

[0237] The third mode uses both the reflected light from the first mode and the emitted light from the second mode. Specifically, the reflected light in the first mode and the reflected light in the second mode are The first mode is driven to express one color by mixing the light emitted by the other two LEDs. It can display more vividly than the first mode while saving power consumption more than the second mode. For example, when the illuminance of external light is relatively low, such as under indoor lighting or in the morning or evening, or when the external light This is effective when the chromaticity is not white. It also uses a mixture of reflected light and emitted light. This makes it possible to display images that give the impression of looking at a painting. .

[0238] As shown in FIG. 13, the electrode 4015 and the FPC 4042 (FPC: Flexible The anisotropic conductive layer 4041 is electrically connected to the This is also fine.

[0239] As shown in FIG. 14, a touch sensor 4137 is provided so as to overlap the display area of ​​the display device 110. may be provided.

[0240] [substrate] There is no particular limitation on the materials used for the substrate 4001 and the substrate 4006. The material should be selected based on the presence or absence of burrs and the heat resistance required to withstand heat treatment. Glass substrates such as borosilicate glass and aluminoborosilicate glass, ceramic substrates, A quartz substrate, a sapphire substrate, or the like can be used. 006: Semiconductor substrates, flexible substrates, laminated films, substrates A material film or the like may also be used.

[0241] The semiconductor substrate is, for example, a single semiconductor made of silicon or germanium. Conductor substrate, or silicon carbide, silicon germanium, gallium arsenide, indium phosphide Compound semiconductor substrates made of titanium, zinc oxide, or gallium oxide are also available. The semiconductor substrate may be a single crystal semiconductor or a polycrystalline semiconductor.

[0242] Examples of materials for the flexible substrate, lamination film, and base film include polyethylene. Polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyether Polytetrafluoroethylene (PES), Polytetrafluoroethylene (PTFE), Polypropylene, Poly Ester, polyvinyl fluoride, polyvinyl chloride, polyolefin, polyamide (nylon , aramid, etc.), polyimide, polycarbonate, aramid, epoxy resin, acrylic Resins and the like can be used.

[0243] By using such a material as the substrate, a lightweight display device can be provided. In addition, by using such a material as the substrate, a display device that is resistant to impacts can be provided. In addition, by using such a material for the substrate, the display can be made less susceptible to damage. An apparatus can be provided.

[0244] The lower the linear expansion coefficient of the flexible substrate used for the substrate 4001 and the substrate 4006, the less the deformation caused by the environment. The substrate 4001 and the substrate 4006 are preferably made of flexible substrates, e.g. For example, the linear expansion coefficient is 1×10 -3 / K or less, 5×10 -5 / K or less, or 1×10 -5 / In particular, aramid has a low linear expansion coefficient, making it suitable for flexible substrates. It is suitable as.

[0245] [Insulation layer] Insulating layer 4101, insulating layer 4102, insulating layer 4103, insulating layer 4104, insulating layer 4105, and insulating layer 226 may be aluminum nitride, aluminum oxide, aluminum nitride oxide, or the like. Aluminum, aluminum oxide nitride, magnesium oxide, silicon nitride, silicon oxide, Silicon oxide nitride, silicon oxynitride, gallium oxide, germanium oxide, yttrium oxide , Zirconium oxide, Lanthanum oxide, Neodymium oxide, Hafnium oxide, Tantalum oxide A material selected from the group consisting of aluminum silicate, aluminum silicate, etc. is used in a single layer or in a laminated form. , oxide materials, nitride materials, oxynitride materials, and oxynitride materials, and a mixture of multiple materials. Materials that have been modified may also be used.

[0246] In this specification, the term "nitride oxide" refers to a compound that contains more nitrogen than oxygen. In addition, oxynitrides refer to compounds that contain more oxygen than nitrogen. The content of is, for example, measured by Rutherford Backscattering (RBS) spectroscopy. Measurements can be made using techniques such as kScattering Spectrometry. .

[0247] In particular, the insulating layers 4102 and 4104 are made of insulating materials that are difficult for impurities to penetrate. For example, boron, carbon, nitrogen, oxygen, fluorine, magnesium, Aluminum, silicon, phosphorus, chlorine, argon, gallium, germanium, yttrium Insulating materials containing aluminum, zirconium, lanthanum, neodymium, hafnium or tantalum, It may be used in a single layer or a multilayer structure. For example, the following insulating material is used as an insulating material that is difficult for impurities to penetrate: Aluminum oxide, aluminum nitride, aluminum oxynitride, aluminum oxynitride, Gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide Examples of the oxide include neodymium oxide, hafnium oxide, tantalum oxide, and silicon nitride. In addition, the insulating layer 4102 or the insulating layer 4104 may be made of indium tin oxide, which has high insulating properties. Zinc (In-Sn-Zn oxide) and the like may also be used.

[0248] By using an insulating material that is difficult for impurities to penetrate for the insulating layer 4102, The insulating layer 410 can suppress the diffusion of impurities from the semiconductor substrate 410 and improve the reliability of the transistor. By using an insulating material that is difficult for impurities to penetrate for 4, impurities from the insulating layer 4105 side can be prevented from penetrating. This makes it possible to suppress diffusion and improve the reliability of the transistor.

[0249] The insulating layer 4112 has a flat surface. In addition to the above insulating materials, polyimide, acrylic resin, benzocyclobutene resin, For example, organic materials having heat resistance, such as polyamide and epoxy resins, can be used. In addition to the above organic materials, low-k materials, siloxane resins, and PSG (phosphor Glass), BPSG (borophosphorus glass), etc. can be used. A plurality of insulating layers formed by the above may be laminated.

[0250] The siloxane-based resin is a Si-O- formed material that is formed from a siloxane-based material. This corresponds to a resin containing Si bonds. Siloxane-based resins have organic groups (e.g., arsenic) as substituents. Alternatively, the organic group may have a fluoro group. It's fine if you're there.

[0251] In addition, a CMP process may be performed on the surface of an insulating layer or the like. This reduces the unevenness of the sample surface and improves the coverage of the insulating and conductive layers that will be formed later. do.

[0252] [Conductive layer] Electrode 4031, Electrode 4030, Electrode 4022, Electrode 4021, Electrode 4014, Electrode 311 , electrode 223, electrode 244a, electrode 244b, electrode 4131, and electrode 4132, etc. Materials for forming the conductive layer include aluminum, chromium, copper, silver, gold, platinum, and tin. Ta, Nickel, Titanium, Molybdenum, Tungsten, Hafnium, Vanadium, Niobium One metal element selected from manganese, magnesium, zirconium, beryllium, etc. Materials containing the above can be used. Polycrystalline silicon containing impurity elements such as phosphorus can also be used. Semiconductors with high electrical conductivity, such as tantalum, may also be used. Alternatively, a semiconductor such as a nitride semiconductor having high electrical conductivity may be used. A silicide such as silicide may be used. A plurality of conductive layers made of these materials may be stacked to form a It may be used.

[0253] In addition, indium tin oxide (ITO) is used as the conductive material for forming the conductive layer. m Tin Oxide), indium oxide containing tungsten oxide, tungsten oxide Indium zinc oxide containing titanium oxide, Indium oxide containing titanium oxide Indium tin oxide, indium zinc oxide, silicon doped indium tin oxide, etc. Conductive materials containing oxygen, titanium nitride, tantalum nitride, and other nitrogen-containing conductive materials are suitable. In addition, a material containing the above-mentioned metal element and a conductive material containing oxygen can be combined. A laminated structure in which the above-mentioned metal element-containing material and nitrogen are combined can also be used. It is also possible to use a laminated structure in which a conductive material containing the above-mentioned metal element is combined. A laminated structure combining a material containing oxygen, a conductive material containing nitrogen, and a conductive material containing oxygen. It can also be written as:

[0254] In the display device 110 shown in FIG. 12A, the electrode 311 is made of a conductive material with high light reflectance. The electrodes 4030, 4131, and 4132 are made of a light-transmitting conductive material. Form.

[0255] [Semiconductor layer] The semiconductor layer 242 may be formed using an amorphous semiconductor, a microcrystalline semiconductor, a polycrystalline semiconductor, or the like. For example, amorphous silicon and microcrystalline germanium can be used. In addition, silicon carbide, gallium arsenide, oxide semiconductors (a type of metal oxide), and nitride semiconductors Compound semiconductors such as these, organic semiconductors, etc. can be used.

[0256] In particular, it is preferable to use an oxide semiconductor, which is a type of metal oxide, as the semiconductor layer 242. Since the band gap of an oxide semiconductor is 2 eV or more, the semiconductor layer 242 is made of an oxide semiconductor. By using such a material, a transistor with extremely low off-state current can be realized. The retention time of electrical signals such as image signals can be extended, and the writing interval is This allows the frequency of refresh operations to be reduced, resulting in reduced power consumption. This has the effect of reducing power consumption.

[0257] In addition, a transistor using an oxide semiconductor, a type of metal oxide, for the semiconductor layer in which the channel is formed is also used. An OS transistor (also called an OS transistor) has a high withstand voltage between the source and drain. Therefore, a highly reliable transistor can be provided. In addition, a highly reliable semiconductor device or the like can be provided. Thus, a semiconductor device having a large output voltage and high withstand voltage can be provided.

[0258] In addition, OS transistors have a relatively high field-effect mobility, enabling high-speed operation. Therefore, by using an OS transistor in the pixel portion of a display device, it is possible to display a high-quality image. In addition, by using OS transistors, it is possible to provide a driver circuit on the same substrate. This allows the display unit and pixel unit to be manufactured separately, reducing the number of parts required for the display device. It is possible.

[0259] In general, the capacitance of a capacitor provided in a display device is determined by the capacitance of a transistor disposed in a pixel portion. The capacitance is set so that the charge can be held for a predetermined period, taking into consideration the current flow and other factors. The capacitance may be set in consideration of the off-state current of the transistor and the like.

[0260] For example, by using an OS transistor in a pixel portion of a display device, the capacitance of a capacitor can be reduced. In addition, by using an OS transistor in a pixel portion of a display device, The formation of the capacitive element may be omitted.

[0261] [Overcoat layer] The overcoat layer 4133 may be made of, for example, acrylic resin, epoxy resin, polyimide, etc. The organic insulating layer can be formed by forming the overcoat layer 4133. For example, impurities contained in the colored layer 4134 are diffused into transistors, display elements, etc. However, the overcoat layer 4133 is not necessarily provided. It is not necessary, and a structure in which the overcoat layer 4133 is not formed may be used.

[0262] [Colored layer] Materials that can be used for the coloring layer include metal materials, resin materials, pigments, or dyes. Examples of such materials include resin materials.

[0263] [Light blocking layer] Materials that can be used for the light-shielding layer include carbon black, titanium black, gold, etc. Examples of the material for the light-shielding layer include metals, metal oxides, and composite oxides including solid solutions of multiple metal oxides. The film may be a film containing a resin material, or may be a thin film of an inorganic material such as a metal. In addition, the light-shielding layer may be a laminated film of a film containing the material of the colored layer. A film containing a material for a colored layer that transmits light of a certain color and a material for a colored layer that transmits light of a different color are used. By using the same material for the colored layer and the light-shielding layer, This is preferable because it allows the equipment to be standardized and the process to be simplified.

[0264] [Film formation method] The insulating layer, the conductive layer for forming electrodes and wiring, and the semiconductor layer are formed by sputtering. , spin coating method, CVD (Chemical Vapor Deposition) method (Thermal CVD method, MOCVD (Metal Organic Chemical Vapo r Deposition) method, PECVD (Plasma Enhanced CVD) ) method, high density plasma CVD method, LPCVD method (low pressure CVD), APCVD method (atmosphere ric pressure CVD), ALD (Atomic Layer Deposition) Deposition) method or MBE (Molecular Beam Epit axy) method or PLD (Pulsed Laser Deposition) method, Dip method, spray coating method, droplet ejection method (inkjet method, etc.), printing method (screen The printing method may be used for forming the pattern.

[0265] The plasma CVD method can produce high-quality films at relatively low temperatures. When a deposition method that does not use plasma, such as a thermal CVD method, is used, the deposition surface is damaged. For example, wiring, electrodes, and elements (transistors, Capacitive elements, etc., may become charged up by receiving electric charge from the plasma. At this time, the accumulated charge can damage the wiring, electrodes, elements, etc., contained in the semiconductor device. On the other hand, in the case of a deposition method that does not use plasma, such plasma damage may occur. Since no image is generated, the yield of the semiconductor device can be increased. Since no plasma damage occurs, a film with few defects can be obtained.

[0266] The CVD and ALD methods are deposition methods in which particles emitted from a target are deposited. Unlike the conventional method, this is a film formation method in which a film is formed by a reaction on the surface of the object to be treated. This is a film forming method that is less susceptible to the shape of the workpiece and has good step coverage. The ALD method has excellent step coverage and thickness uniformity, making it suitable for the production of films with high aspect ratios. However, the ALD method has a relatively low deposition rate. Because the deposition rate is slow, it can be used in combination with other deposition methods such as CVD, which has a high deposition rate. In some cases this is preferable.

[0267] In the CVD and ALD methods, the composition of the resulting film can be controlled by the flow rate ratio of the source gases. For example, in the CVD and ALD methods, the flow rate ratio of the source gases can be adjusted to any desired value. In addition, for example, in the CVD method and the ALD method, the film formed can be By changing the flow rate ratio of the source gas while maintaining the temperature, a film with a continuously changing composition can be formed. When forming a film while changing the flow rate ratio of the source gas, multiple film forming chambers can be used. Compared to deposition by a vacuum, the time required for deposition is shortened by the time required for transportation and pressure adjustment. Therefore, the productivity of the semiconductor device can be increased in some cases.

[0268] When forming a film by the ALD method, gases that do not contain chlorine should be used as the material gas. is preferred.

[0269] In addition, when forming a metal oxide layer by a sputtering method, the thickness of the metal oxide layer in the sputtering device is 100 nm. The chamber is equipped with a cryostat to remove water and other impurities from the metal oxide layer as much as possible. A high vacuum (5×10 -7 Pa to 1×10 -4 It is preferable to evacuate the gas to a pressure of about 10 Pa. The gas molecules equivalent to H2O (gas molecules equivalent to m / z = 18) in the chamber Voltage division is 1×10 -4 Pa or less, preferably 5×10 -5 It is preferable that the pressure is less than or equal to Pa. The film temperature is preferably RT or more and 500°C or less, more preferably RT or more and 300°C or less, and RT The temperature is more preferably 200° C. or higher.

[0270] In addition, the sputtering gas must be highly purified. The oxygen gas or argon gas used has a dew point of -40°C or less, preferably -80°C or less, and more preferably A gas that has been highly purified to a temperature of preferably -100°C or lower, more preferably -120°C or lower, is used. This can prevent moisture and the like from being taken into the metal oxide layer as much as possible.

[0271] In addition, when forming an insulating layer, a conductive layer, a semiconductor layer, or the like by sputtering, oxygen is By using a sputtering gas containing oxygen, it is possible to supply oxygen to the layer to be formed. The more oxygen contained in the tartering gas, the more oxygen is likely to be supplied to the layer to be formed. .

[0272] <Variation 1> As a modification of the display device 110, a cross-sectional view of a display device 110a is shown in FIG. In order to avoid repetition, differences from display device 110 will be mainly described.

[0273] The display device 110a has a colored layer 4134e in an area overlapping with the light emitting element 360. In the example, the colored layer 4134e is provided between the insulating layer 4105 and the insulating layer 4112. The colored layer 4134e may be provided on any layer. Also, the colored layer 4134e may be provided in multiple layers. good.

[0274] In addition, in the display device 110a, a colored layer 4134 is provided in the area overlapping the light emitting element 360. not present.

[0275] In the display device 110 shown in FIG. 12A, the light 4520 emitted by the light emitting element 360 is The light 4521 incident on the liquid crystal element 340 passes through the color layer 4134 only once. After passing through 4134, it is reflected by the electrode 311 and passes through the colored layer 4134 again. That is, light 4520 emitted by the light emitting element 360 and light 4521 reflected by the liquid crystal element 340 are The number of times each passes through the colored layer is different. Therefore, it can be displayed in both transmissive and reflective modes. It is difficult to improve the quality.

[0276] In the display device 110a, the colored layer 4134e functions as a colored layer for the light-emitting element 360. In the display device 110a, the colored layer 4134 functions as a colored layer for the liquid crystal element 340. To make.

[0277] Therefore, the colored layer 4134e can be designed as an optimal colored layer for the light emitting element 360. This improves the color reproducibility in the transmission mode. 134 can be designed as an optimal color layer for the liquid crystal element 340. The color reproducibility in the colored layer 4134 and the colored layer 4134e can be improved. By providing the pixel electrode, the display quality of the display device can be improved.

[0278] In addition, a colored layer 4134 is provided in an area overlapping the light emitting element 360 so as to overlap the colored layer 4134e. This is also fine.

[0279] In addition, as shown in FIG. 16, the colored layer 4134 is not provided in the area overlapping the light emitting element 360. For example, a light emitting element 360 that emits red light, a light emitting element 360 that emits green light, or By using a light emitting element 360 that emits blue light, the colored layer 4134 can be omitted. can.

[0280] <Variation 2> As a modification of the display device 110, a cross-sectional view of a display device 110b is shown in FIG. In order to avoid repetition of the description, differences from display device 110 will be mainly described.

[0281] In Fig. 12(A) and (B), a top-gate transistor is applied to a display device. However, the structure of a transistor used in a display device according to one embodiment of the present invention is not particularly limited. For example, a planar type transistor or a staggered type transistor may be used. The transistor may be a top gate type or an inverted staggered type. The transistor may have either a bottom gate type or a bottom gate type structure. A combination of stars may also be used.

[0282] The display device 110 shown in FIG. 12A includes a top-gate transistor 4010. The display device shown in FIG. The device 110b includes a top-gate type transistor 4010, a transistor 4011, and Instead of the transistor 4012, a bottom-gate transistor 4010a The second input terminal 4011a and the second input terminal 4012a are connected to the first input terminal 4012.

[0283] FIG. 17B is a cross-sectional view of the transistor 4010a. The transistors 4010a to 4012a have the same configuration. , an electrode 246, an electrode 244a, an electrode 244b, an electrode 223, and a semiconductor layer 242. The electrode 223 is formed on an insulating layer 4102, and the insulating layer 4103 is formed on the electrode 223. The semiconductor layer 242 is formed on the insulating layer 4103. The electrode 244b is formed on the semiconductor layer 242 and the insulating layer 4103. The electrode 244b has a region in contact with a part of the semiconductor layer 242. On the semiconductor layer 242, the electrode 244a, and the electrode 244b, An insulating layer 4105 is formed. An electrode 246 is formed on the insulating layer 4105. In addition, an insulating layer 4104 is formed over the insulating layer 4105 and the electrode 246.

[0284] The electrode 223 and the semiconductor layer 242 have an overlapping region with the insulating layer 4103 interposed therebetween. The electrode 246 and the semiconductor layer 242 have an overlapping area with the insulating layer 4105 interposed therebetween. As previously mentioned, both electrode 246 and electrode 223 can function as gate electrodes. Therefore, both the insulating layer 4103 and the insulating layer 4105 can function as a gate insulating layer. do.

[0285] In addition, the bottom-gate transistors 4010a to 4010b shown in FIGS. In the transistor 4012a, the electrode 223 overlaps the electrode 244 when viewed in a plan view. The region in the semiconductor layer 242 sandwiched between a and the electrode 244b functions as a channel formation region. do.

[0286] The electrode 246 may be provided on the insulating layer 4104. In other words, the electrode 246 may not be provided.

[0287] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0288] (Embodiment 3) In this embodiment, a modified example of the display device 110 will be described with reference to the drawings. Similarly to the display device 110, the display device 50 has a display area 111, a display area 112, a display area 113, and a bending The curved region 114 and the bent region 115 are also included. In this embodiment, differences from the display device 110 will be mainly described. FIG. 19 is a plan view of a display device 150 which is a modified example of the display device 10. FIG.

[0289] The display device 150 is different from the display device 110 in that it does not have the input terminal 122 and the input terminal 123. In addition, the display device 150 has a meandering shape in the bending region 114 and the bending region 115. The wiring 245 provided in the bending region 114 is connected to the display region 111. For example, the wiring 235 in the display area 111 and the wiring 235 in the display area The wiring 235 in the bending region 115 is electrically connected via the wiring 245. The wiring 245 provided in the display area 111 electrically connects the display area 113 to the display area 111. For example, the wiring 235 in the display area 111 and the wiring 235 in the display area 113 are connected to each other via a wiring 245. The electrical connection is made via the

[0290] The display area 111, the display area 112, and the display area 113 are electrically connected by wiring 245. As a result, the display area 111, the display area 112, and the display area 113 are integrated into a single display area. Therefore, the circuit 232a, the circuit 232b, and the circuit 2 32c, for example, only the circuit 232b is used to display the display areas 111, 112, and and the display area 113. Of the circuits 233a and 233c, for example, only the circuit 233a is used to display the display area 111 and the display area 11 2, and the display area 113 can be driven.

[0291] In this manner, the wiring 245 is used to connect the display area 111 and the display area 112, and the display The display area 111 and the display area 113 are electrically connected to each other, so that the configuration of the driving circuit section is The number of input terminals can be reduced. For example, in the display device 150, the input terminal 122 and the and the number of input terminals 123 has been reduced.

[0292] FIG. 20 shows a perspective view of the display device 150 bent at the bending region 114 and the bending region 115. The wiring 245 provided in the bending region 114 and the bending region 115 is formed in a meandering shape. This makes it difficult for breakage due to bending to occur. This prevents malfunctions and reduced reliability. However, the display device 150 may not operate properly or may lose reliability due to short circuits or breaks in wiring or electrodes. Specifically, the radius of curvature R can be set to 1 mm or less. Alternatively, the radius of curvature R can be set to 0.5 mm or less. Alternatively, the radius of curvature R can be set to 0.1 It can be made to be less than mm.

[0293] The wiring 245 can be formed in various shapes. For example, the wiring 245 can be formed in a triangular wave shape. The wiring 245 may be formed in a meandering manner as shown in FIG. 21(A). The wiring 245 may be made to meander (see FIG. 21(B)). Also, the wiring 245 may be made to meander in an arc shape. (See FIG. 21(C)). Also, the wiring 245 may be made to meander by combining straight lines ( See FIG. 21(D). The wiring 245 may be made to meander by combining straight lines and curved lines. (See FIG. 21(E).) Also, as shown in FIG. 21(F) or FIG. 21(G), the wiring 245 may be in the form of a chain.

[0294] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0295] (Embodiment 4) In this embodiment, a display device 110a, which is a modification of the display device 110, and a display device 150 A display device 150a which is a modified example, and a display device 150 which is a modified example of the display device 150a The item b will be explained with reference to the drawings.

[0296] [Display device 110a, display device 150a] First, the display device 110a and the display device 150a will be described. FIG. 24 is a plan view of a display device 110a which is a modified example of the display device 110. 1 is a plan view of a display device 150a which is a modified example of the display device 150. The display device 150a, like the display device 110 and the display device 150, also has a display area 111, a display The display device has a region 112, a display region 113, a curved region 114, and a curved region 115. In order to avoid repetition of the description, differences from the display device 110 and / or the display device 150 will be described. This will mainly explain.

[0297] The display device 110a and the display device 150a have meandering wiring 235 in the display area 113. Similarly to the display area 113, the display area 112 also has a meandering wiring 235. The wiring 235 of the display area 112 and the display area 113 is connected to the wiring 24. Similarly to the display area 115, the display area 112 and the display area 113 are formed in a meandering or chain shape. Even if the wiring 235 is curved or bent, breakage of the wiring 235 is unlikely to occur. This can prevent malfunctions and reduced reliability caused by short circuits or breaks.

[0298] In addition to the wiring 235, other wirings may also be in a meandering or chain shape. For example, As in a display device 110a shown in FIG. 23, the wiring 236 may be a meandering wiring.

[0299] FIG. 26A shows a display device 150a in which the display area 112 and the display area 113 are curved. The display device 110a may also be formed in a similar shape to that shown in FIG. can.

[0300] [Display device 150b] Next, the display device 150b will be described. FIG. 25 shows a modified example of the display device 150a. In order to avoid repetition of the description, the display device 150a is also shown in FIG. This section will mainly explain the differences.

[0301] The display device 150b is different from the display device 15 in that it does not have the bending region 114 and the bending region 115. 0a. Therefore, the display device 150b does not have the wiring 245. In other words, the display device In the device 150b, the wiring 235 of the display area 111 and the wiring 235 of the display area 112 are The display device 150b is connected to the wiring 23 of the display area 111 without going through the wiring 45. 5 and the wiring 235 of the display area 113 are connected without the wiring 245 therebetween.

[0302] The display device 150b does not have the bending region 114 and the bending region 115, so the display region 111 , display area 112, and display area 113 are viewed as one continuous display area. Therefore, it is possible to display an image without any gaps from the display area 111 to the display area 113. can.

[0303] FIG. 26B shows a display device 150b in which the display area 112 and the display area 113 are curved. 1 shows a perspective view of the state.

[0304] [Display device 150c] Next, the display device 150c will be described. FIG. 27 shows a modified example of the display device 150b. In order to avoid repetition of the description, the display device 150b is also shown in FIG. This section will mainly explain the differences.

[0305] As in the display device 150c, the wiring 235 in the display area 111 is also in a meandering or chain shape. The wiring 235 in the display areas 111 to 113 may be formed in a meandering or chain shape. As a result, even if the display areas 111 to 113 are curved or bent, the wiring 23 Therefore, malfunctions and reliability problems caused by short circuits and breaks in the wiring are prevented. The decline can be prevented.

[0306] 28(A) and 28(B) show the display area 111 to the display area 112 of the display device 150c. 13 is a perspective view of the bent state.

[0307] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0308] (Embodiment 5) In this embodiment, the light emitting element 330 and the light emitting element 360 can be used. A configuration example of the EL layer 331 will be described. This corresponds to the light emitting layer 4511 shown in FIG.

[0309] <Configuration of light-emitting element> The light-emitting element 330 shown in FIG. 29(A) has an EL element between a pair of electrodes (electrode 318 and electrode 322). In the following description of the present embodiment, the layer 320 is taken as an example. Assume that electrode 318 is used as an anode and electrode 322 is used as a cathode.

[0310] The EL layer 320 may be formed to include at least a light-emitting layer. It may be a laminated structure including a functional layer. As the functional layer other than the light-emitting layer, a layer containing a substance with high hole injection property, a substance with high hole transport property, a substance with high electron transport property, a substance with high electron injection property, a bipolar substance (a substance with high transport properties of electrons and holes), etc. can be used. Specifically, functional layers such as a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer can be appropriately combined and used.

[0311] In the light-emitting element 330 shown in FIG. 29(A), current flows due to the potential difference applied between the electrode 318 and the electrode 322, and holes and electrons recombine in the EL layer 320 to emit light. That is, it is configured such that a light-emitting region is formed in the EL layer 320.

[0312] In the present invention, the light emitted from the light-emitting element 330 is taken out to the outside from the side of the electrode 318 or the electrode 322. Therefore, either one of the electrode 318 or the electrode 322 is made of a light-transmissive substance.

[0313] Note that the EL layer 320 may be laminated in multiple layers between the electrode 318 and the electrode 322 as in the light-emitting element 331 shown in FIG. 29(B). When having an n-layer (n is a natural number of 2 or more) laminated structure, it is preferable to provide a charge generation layer 320a between the m-th (m is a natural number satisfying 1 ≤ m < n) EL layer 320 and the (m + 1)-th EL layer 320.

[0314] The charge generation layer 320a can be formed by appropriately combining a composite material of an organic compound and a metal oxide, a metal oxide, a composite material of an organic compound and an alkali metal, an alkaline earth metal, or a compound thereof, in addition to these. As the composite material of an organic compound and a metal oxide, for example, For example, organic compounds and metal oxides such as vanadium oxide, molybdenum oxide, and tungsten oxide. The organic compounds include aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons, etc. Low molecular weight compounds such as fluorine, fluorine-containing compounds, or oligomers, dendrimers, and polymers of these low molecular weight compounds. As the organic compound, a hole transporting compound, etc. can be used. The hole mobility of the organic compound is 10 -6 cm 2 It is preferable to apply a value of 0.1 V or more. However, other materials may be used as long as they have a higher hole transporting property than an electron transporting property. In addition, the materials used for the charge generation layer 320a have the following characteristics: carrier injection property, carrier transport property, and the like. Since the light emitting element 330 has excellent transmission properties, the light emitting element 330 can be driven at a low current and a low voltage. can be done.

[0315] The charge generating layer 320a is made of a composite material of an organic compound and a metal oxide, and other materials. For example, a layer including a composite material of an organic compound and a metal oxide and a layer including an electron transport layer may be formed. A compound selected from among the electroconductive materials and a layer containing a compound having high electron transport properties are combined. Alternatively, a layer containing a composite material of an organic compound and a metal oxide and a transparent conductive film may be combined. may be formed in combination.

[0316] The light emitting device 331 having such a configuration may have problems such as energy transfer and quenching. It is difficult to achieve this, and the range of materials to choose from is expanding, making it possible to develop light-emitting devices that have both high luminous efficiency and a long life. It is also easy to obtain phosphorescence in one light-emitting layer and fluorescence in the other. It is.

[0317] The charge generating layer 320a is a layer that generates a charge when a voltage is applied between the electrodes 318 and 322. The layer 320a has a function of injecting holes into the EL layer 320 formed in contact with the generating layer 320a. The other EL layer 320 has a function of injecting electrons.

[0318] The light-emitting element 331 shown in FIG. 29(B) can be obtained by changing the type of light-emitting material used in the EL layer 320. By using multiple luminescent materials with different luminescent colors, various luminescent colors can be obtained. By using luminescent materials, it is possible to obtain broad spectrum emission or white light emission. do.

[0319] When white light is to be emitted using the light-emitting element 331 shown in FIG. 29(B), a combination of a plurality of EL layers is used. In combination, it is sufficient if the device emits white light containing red, blue, and green light. For example, For example, a light-emitting layer containing a blue fluorescent material as a light-emitting material and a light-emitting layer containing green and red phosphorescent materials as light-emitting materials may be used. In addition, a light-emitting layer that emits red light and a light-emitting layer that emits green light may be used. It may also have a structure including a light-emitting layer that emits light and a light-emitting layer that emits blue light. Even if the device has a structure having light-emitting layers that emit light of complementary colors, white light can be obtained. In a stacked element in which two layers are stacked, the color of the light emitted from the light-emitting layer is different from that of the other light-emitting layer. If the luminescent colors obtained from the above are in a complementary relationship, the complementary colors are blue and yellow, Alternatively, blue-green and red may be mentioned.

[0320] In the above-mentioned laminated element, a charge generating layer is disposed between the laminated light emitting layers. This makes it possible to realize a long-life element in the high-luminance region while keeping the current density low. In addition, the voltage drop due to the resistance of the electrode material can be reduced, allowing for uniform generation over a large area. Light becomes possible.

[0321] In addition, the light emitting element 330 and / or the light emitting element 331 may be formed by absorbing light emitted from the EL layer 320. By using a micro-optical resonator (also called a "microcavity") structure that oscillates light, different emission characteristics can be obtained. Even if the same EL layer 320 is used in the optical element 331, light of different wavelength ranges can be narrowed and extracted. This can be done.

[0322] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0323] (Embodiment 6) In this embodiment, an oxide semiconductor, which is a type of metal oxide, will be described. The body preferably contains indium or zinc, and more preferably contains indium and zinc. In addition to these, the element M (M is aluminum, gallium, yttrium, Lithium, Copper, Vanadium, Beryllium, Boron, Silicon, Titanium, Iron, Nickel, Gel Manium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum One or more of the following materials are included: tantalum, tungsten, or magnesium It may be included.

[0324] Oxide semiconductors, a type of metal oxide, are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. As a non-single crystal oxide semiconductor, for example, CAAC-OS (c-axis aligned crystalline oxide semico inductor, polycrystalline oxide semiconductor, nc-OS (nanocrystalline A-like amorphous oxide semiconductor OS:amorphous-like oxide semiconductor) and amorphous oxide semiconductors.

[0325] CAAC-OS has a c-axis orientation and multiple nanocrystals are connected in the ab-plane direction. The crystal structure has distortion. The distortion is caused by the area where multiple nanocrystals are connected. In the region, between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement, Indicates the point where the direction is changing.

[0326] Nanocrystals are basically hexagonal, but are not limited to regular hexagons and may be non-regular hexagons. In addition, the distortion may have a lattice arrangement such as a pentagon or a heptagon. In addition, in the CAAC-OS, clear grain boundaries (grain boundaries) are not observed even in the vicinity of the strain. In other words, the grain boundaries are not observed due to the distortion of the lattice arrangement. This is because the CAAC-OS has a high lattice constant in the ab-plane direction. The oxygen atoms are not densely packed, and the bond distance between atoms changes due to the substitution of metal elements. This is believed to be because distortion can be tolerated by, for example, converting the signal into a signal having a high resolution.

[0327] In addition, the CAAC-OS has a layer containing indium and oxygen (hereinafter, the In layer) and an element A layered crystal structure in which layers containing M, zinc, and oxygen (hereinafter referred to as the (M,Zn) layer) are stacked. Indium and element M tend to have a layered structure. It is possible, and when the element M in the (M,Zn) layer is replaced with indium, (In,M,Zn) Also, when the indium in the In layer is replaced with element M, (In,M ) layer.

[0328] The nc-OS is a nano-sized area (e.g., an area of ​​1 nm to 10 nm, especially 1 nm to 3 nm). The nc-OS has periodic atomic arrangement in the nanometer range. There is no regularity in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analysis method, nc-OS may be considered to be a-like OS or amorphous oxide semiconductor. It may be indistinguishable from the above.

[0329] The a-like OS is an oxide semiconductor that has a structure between the nc-OS and the amorphous oxide semiconductor. Conductive. A-like OS has voids or low density regions. The OS has a lower crystallinity compared to the nc-OS and CAAC-OS.

[0330] Oxide semiconductors, a type of metal oxide, have a variety of structures, each with different properties. The oxide semiconductor that can be used in one embodiment of the present invention is an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, or a crystalline oxide semiconductor. Two or more of the following are used: crystalline oxide semiconductor, a-like OS, nc-OS, and CAAC-OS. It may have a CAC-OS.

[0331] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0332] (Embodiment 7) In this embodiment, an example of an electronic device using a display device according to one embodiment of the present invention will be described. do.

[0333] Examples of electronic devices using a display device according to one embodiment of the present invention include display devices such as televisions and monitors. Lighting equipment, desktop or notebook personal computers, word processors The digital content is stored on a recording medium such as a DVD (Digital Versatile Disc). Image reproducing devices that reproduce still or moving images, portable CD players, radios, tape recorders, etc. Corda, headphone stereo, stereo, table clock, wall clock, cordless telephone handset, Transceivers, car phones, mobile phones, personal digital assistants, tablet terminals, portable games machines, pachinko machines and other fixed game machines, calculators, electronic organizers, electronic books, electronic translators, voice input High-frequency processing equipment such as power equipment, video cameras, digital still cameras, electric shavers, and microwave ovens Heating equipment, electric rice cookers, electric washing machines, vacuum cleaners, water heaters, electric fans, hair dryers, air conditioners Air conditioning equipment such as conditioners, humidifiers, and dehumidifiers, dishwashers, dish dryers, clothes dryers, Futon dryers, electric refrigerators, electric freezers, electric refrigerator-freezers, freezers for storing DNA, flashlights , tools such as chainsaws, smoke detectors, medical equipment such as dialysis machines, etc. Exit lights, traffic lights, conveyor belts, elevators, escalators, industrial robots, power storage These include industrial equipment such as power storage systems, power leveling and smart grid storage devices. In addition, there are vehicles that are propelled by engines that use fuel or electric motors that use electricity from a storage battery. Moving objects may also be included in the category of electronic devices. Electric vehicles (EV), hybrid vehicles (HEV) that combine an internal combustion engine and an electric motor, plug-in hybrid vehicles (PHD), Hybrid vehicles (PHEVs), tracked vehicles that use these tires and wheels as tracks, electric assist vehicles, Motorized bicycles, including strike bicycles, motorcycles, electric wheelchairs, golf carts, small or Large ships, submarines, helicopters, aircraft, rockets, satellites, space probes and planetary exploration aircraft, spacecraft, etc.

[0334] The electronic devices described in this embodiment mode can be equipped with the above-described display device or the like.

[0335] As an example of the electronic device, electronic device 31 is shown in FIGS. 30(A), (B), (C), and (D). 30(E) shows the area indicated by the dashed line A1-A2 in FIG. 30(C) and (D) show the electronic device 3100 folded in half. FIG. 30(A) shows the electronic device 3100 in an open state. FIG. 30(B) shows the electronic device 3100 in an open state. ) shows the electronic device 3100 in the middle of being opened or closed.

[0336] The electronic device 3100 includes a housing 3101, a housing 3102, a hinge portion 3103, and a cover material 310. 4, the display device 3110, the circuit board 3160, the battery 3170a, and the battery 317 0b, etc. On the circuit board 3160, a central processing unit, a storage device, a display control In addition, in an area 3151 in the housing 3101, other semiconductor devices, etc. In addition, a heat dissipation member, a member for absorbing or blocking electromagnetic waves, etc. may be provided in the region 3151. Functional components, such as components for shielding magnetic fields, may also be provided.

[0337] The housing 3101 and the housing 3102 are connected by a hinge portion 3103. The hinge 3103 and the housing 3102 can rotate relatively around the axis of the hinge 3103. do.

[0338] The display device 3110 has a display area 3111 overlapping the housing 3101 and a housing 3102. The display device 3110 has a display area 3111 and a display area 3112 that overlap each other. The cover material 3104 has a bending region (not shown) between the display regions 3112. 111 and a region overlapping with the display region 3112. The element 104 has a function of transmitting visible light.

[0339] The electronic device 3100 may be provided with a touch sensor or the like as an input device. The display device 3100 may be provided with a camera, a microphone, a speaker, a communication device, and the like. The display device described in the above embodiment mode can be used as 3110.

[0340] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is. [Explanation of symbols]

[0341] 100 Electronic equipment 101 Case 102 Audio output device 103 Operation switch 104 Voice input device 105 Imaging device 110 Display device 111 Display area 112 Display area 113 Display area 114 Bend area 115 Bend area 121 Input terminal 122 Input terminal 123 Input terminal 131 Touch Sensor 132 Touch Sensor Controller 141 Bus Line 150 Display device 151 areas 160 Circuit Board 161 Arithmetic equipment 162 Communication Equipment 163 Storage device 164 Display control device 165 Attitude detection unit 166 Vibration device 167 Sensor Module 168 External Interface 169 Sound Controller 170 Battery 171 Battery Controller 172 Power receiving unit 180 Antenna 223 Electrode 225 Display element 226 Insulating Layer 230 pixels 235 Wiring 236 Wiring 237 Pixel Circuit 242 Semiconductor layer 245 Wiring 246 Electrode 311 Electrode 318 Electrode 320 EL layer 322 electrode 330 Light emitting element 331 Light emitting element 340 Liquid crystal element 360 Light emitting element

Claims

[Claim 1] A display device having a first display area, a second display area, and a first area, the first display area and the second display area are adjacent to each other via the first area, the first display area has a first wiring; A display device, wherein the first wiring has a meandering shape.

Images