Optical loss measuring device

Abstract

To measure abnormality of a light guide route of a semiconductor light guide chip.SOLUTION: An optical loss measuring device includes: a first light guide cable; a second light guide cable; an optical measuring instrument; at least one angle adjustment bracket; and a first emission microscope. The first light guide cable is connected to a light generator. The optical measuring instrument is connected to the second light guide cable. The angle adjustment bracket has the first light guide cable and the second light guide cable, and adjusts one end of the first light guide cable and one end of the second light guide cable so as to be directed toward semiconductor light guide chips, respectively. When the light generator generates light beams, the light beams are emitted to the semiconductor light guide chips via the first light guide cable, and the semiconductor light guide chips guide the light beams so as to be emitted to the second light guide cable. The optical measuring instrument takes in energy by receiving light beams via the second light guide cable. The first emission microscope fetches a light leakage position from which light beams scatter from the semiconductor light guide chips.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a measurement device, and more particularly to an optical loss measurement device. [Background technology]

[0002] In optical cable manufacturing, it is often necessary to measure the optical loss of optical fiber lines, etc. One method for measuring optical loss is to use a combination of an optical power meter and a stable light source. A conventional optical loss measurement system includes an optical power meter, a light source, and a control unit. The light source transmits an optical signal from one end of the object to be measured. The optical power meter receives the optical signal that has passed through the object at the other end of the object to measure the remaining optical output. The control unit then compares the initial optical output emitted by the light source with the remaining optical output measured by the optical power meter to measure the optical transmission loss of the object to be measured.

[0003] However, the above optical loss measurement system is used to measure high-power optical transmission loss. There is a demand for a device to measure low-power optical transmission loss occurring in the light guide process of some semiconductor elements, such as silicon photonic integrated circuits, or the light leakage position of silicon photonic integrated circuits. Silicon photonic integrated circuits are integrated circuit technologies that manufacture photonic elements by silicon processes, and can integrate optoelectronic components such as optical fibers, optical amplifiers, and optical modulators, and electronic components such as transistors, capacitors, and inductances, into a single chip, thereby achieving highly efficient conversion between light and electricity.

[0004] The present invention provides an optical loss measuring device for solving the above problems. Summary of the Invention

[0005] The present invention provides an optical loss measurement device for measuring anomalies in a light guide path of a semiconductor light guide chip.

[0006] In one embodiment of the present invention, the optical loss measurement device includes a first light guide cable, a second light guide cable, a light measurement device, at least one angle adjustment bracket, and a first emission microscope. The first light guide cable has a first end and a second end. The first end of the first light guide cable is connected to a light generator. The second light guide cable has a third end and a fourth end. The light measurement device is connected to the fourth end of the second light guide cable. The angle adjustment bracket is arranged to position the second end of the first light guide cable and the third end of the second light guide cable, and adjusts the second end of the first light guide cable and the third end of the second light guide cable to face the semiconductor light guide chip, respectively. The first emission microscope has an image capture surface facing the semiconductor light guide chip. When the light generator generates a light beam, the light beam is output to the semiconductor light-guiding chip via a first light-guiding cable, the semiconductor light-guiding chip guides the light beam to be output to a second light-guiding cable, the light measuring instrument receives the light beam via the second light-guiding cable and captures its energy, and the first emission microscope captures a light leakage position where the light beam dissipates from the semiconductor light-guiding chip.

[0007] In one embodiment of the present invention, the angle-adjustable bracket includes a first angle-adjustable bracket and a second angle-adjustable bracket, on which the second end of the first light guide cable and the third end of the second light guide cable are respectively disposed, and adjust the second end of the first light guide cable and the third end of the second light guide cable to face the semiconductor light guide chip, respectively.

[0008] In one embodiment of the present invention, the first angle adjustment bracket and the second angle adjustment bracket are three-dimensional angle adjustment brackets.

[0009] In one embodiment of the present invention, the three-dimensional angle adjustment bracket is an automated three-dimensional angle adjustment bracket.

[0010] In one embodiment of the present invention, the optical loss measurement apparatus further includes at least one host computer, which is electrically connected to the automated three-dimensional angle adjustment bracket to adjust the angle of the second end of the first light guide cable and the third end of the second light guide cable relative to the semiconductor light guide chip.

[0011] In one embodiment of the present invention, a host computer is electrically connected to the light generator, the light measurement instrument, and the first emission microscope and calculates the light loss energy of the light beam at the light leak location.

[0012] In one embodiment of the present invention, the first emission microscope includes an image sensor (CCD) and a metallographic microscope connected to the image sensor.

[0013] In one embodiment of the present invention, a semiconductor light-guiding chip includes a silicon on insulator (SOI) substrate, and at least one or a combination of an optical waveguide, a directional coupler, a Mach-Zehnder interferometer, an annular resonant cavity, a grating coupler, an edge coupler, an optical modulator, an optical measuring instrument, and a laser diode provided on the substrate.

[0014] In one embodiment of the present invention, the optical loss measurement apparatus further comprises a platform for holding the semiconductor light-guiding chip.

[0015] In one embodiment of the present invention, the first light guiding cable and the second light guiding cable are optical fibers.

[0016] In one embodiment of the invention, the light generator is a laser generator and the light beam is a laser beam.

[0017] In one embodiment of the present invention, the optical loss measurement apparatus further includes a first mounting base and a second mounting base. The first mounting base has a first outer mounting surface and a second outer mounting surface opposed to each other. The first angle adjustment bracket is fixed to the first outer mounting surface of the first mounting base. The second mounting base has a third outer mounting surface and a fourth outer mounting surface opposed to each other. The second angle adjustment bracket is fixed to the third outer mounting surface of the second mounting base.

[0018] In one embodiment of the present invention, the semiconductor light-guiding chip is a semiconductor photoelectric conversion chip.

[0019] In one embodiment of the present invention, the semiconductor photoelectric conversion chip is electrically connected to an electrical parameter measuring device via a first wire and a second wire, and the electrical parameter measuring device measures an electrical parameter of the semiconductor photoelectric conversion chip.

[0020] In one embodiment of the present invention, the angle-adjustable bracket further includes a third angle-adjustable bracket and a fourth angle-adjustable bracket. The third angle-adjustable bracket is fixed to the second outer mounting surface of the first mounting base. The fourth angle-adjustable bracket is fixed to the fourth outer mounting surface of the second mounting base. The third angle-adjustable bracket and the fourth angle-adjustable bracket are connected to the first electric wire and the second electric wire, respectively.

[0021] In one embodiment of the present invention, the third angle adjustment bracket and the fourth angle adjustment bracket are three-dimensional angle adjustment brackets.

[0022] In one embodiment of the present invention, the optical loss measurement device further includes a second emission microscope. The second emission microscope has an image capture surface facing the semiconductor photoelectric conversion chip. When the semiconductor photoelectric conversion chip performs photoelectric conversion on the light beam, the second emission microscope captures a light leakage position where the light beam is scattered from the semiconductor photoelectric conversion chip.

[0023] In one embodiment of the present invention, the second emission microscope comprises an image sensor and a metallographic microscope connected to the image sensor.

[0024] According to the present invention, the optical loss measurement device captures the energy of a light beam that has passed through a semiconductor light-guiding chip using an optical measuring instrument, captures the light leakage position where the light beam dissipates from the semiconductor light-guiding chip using a first emission microscope, and measures abnormalities in the light-guiding path of the semiconductor light-guiding chip. [Brief description of the drawings]

[0025] [Figure 1] 1 is a structural schematic diagram of an optical loss measurement device according to a first embodiment of the present invention. [Diagram 2] FIG. 5 is a structural schematic diagram of an optical loss measurement device according to a second embodiment of the present invention. [Diagram 3] 1 is a structural cross-sectional view of a semiconductor light-guiding chip according to an embodiment of the present invention; [Figure 4] FIG. 11 is a structural schematic diagram of an optical loss measurement device according to a third embodiment of the present invention. [Diagram 5] FIG. 11 is a structural schematic diagram of an optical loss measurement device according to a fourth embodiment of the present invention. [Figure 6] FIG. 11 is a structural schematic diagram of an optical loss measurement device according to a fifth embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0026] Hereinafter, the embodiments of the present invention will be described with reference to the drawings. In the drawings and the specification, the same reference numerals indicate the same or similar components. In the drawings, shapes and thicknesses may be enlarged for simplification or convenience of illustration. It should be noted that elements not shown in the drawings or described in the specification are obvious to those skilled in the art. Those skilled in the art can make various modifications and improvements based on the contents of the present invention.

[0027] Unless otherwise specified, conditional statements or words such as "can" or "may" are often intended to express features, components, or steps that are present in this embodiment but may also be interpreted as not being required. In other embodiments, those features, components, or steps may not be required.

[0028] In this specification, the phrases "one embodiment" or "embodiment" refer to a particular element, structure, or feature that relates to at least one embodiment. Thus, the phrases "one embodiment" or "embodiment" in this specification do not necessarily refer to the same embodiment. It is to be noted that particular elements, structures, and features described in multiple embodiments can be combined as appropriate.

[0029] In this specification and in the scope of this patent application, certain terms are used to refer to certain components. However, a person having ordinary skill in the art (a person skilled in the art) should understand that the same components may be referred to by different terms. The scope of the specification and patent application is based on the differences in functions rather than on the differences in names. The term "including" in this specification and in the scope of the patent application is an open-ended term and should be interpreted as "including, but not limited to." Furthermore, "coupled" or "connected" in this specification includes all direct and indirect coupling means. Thus, when a first element is described as being connected to a second element in this specification, it means that the first element may be directly connected to the second element by an electrical or signal connection such as wireless transmission, optical transmission, etc., or may be indirectly electrically or signally connected to the second element by some other element or connection means.

[0030] It will be understood by those skilled in the art that the following contents are merely examples, that various modifications are possible, and that such modifications are also within the scope of the present invention. The scope of the present invention is indicated by the appended claims. In the specification and claims, "a" and "the" refer to "one or at least one" element or component, unless otherwise specified. In addition, singular articles also include the meaning of a plurality of elements or components, unless otherwise specified, that is clearly understood from the surrounding text. In addition, "in" also includes the meaning of "in" and "on". Terms in the specification and claims have the same meaning as those understood by those skilled in the art, unless otherwise specified. In addition, some specific terms will be clearly defined and explained below. The terms in the specification are merely examples, and do not limit the scope of the present invention. In addition, the present invention is not limited to the following examples.

[0031] The present invention will be described in detail below with reference to examples and drawings.

[0032] The optical loss measurement device of the present invention captures the energy of a light beam that has passed through a semiconductor light-guiding chip using an optical measuring instrument, captures the light leakage position where the light beam dissipates from the semiconductor light-guiding chip using a first emission microscope, and measures abnormalities in the light-guiding path of the semiconductor light-guiding chip.

[0033] FIG. 1 is a structural schematic diagram of an optical loss measurement device according to a first embodiment of the present invention. The first embodiment of the optical loss measurement device 1 will be described with reference to FIG. 1. The optical loss measurement device 1 includes a first light guide cable 10, a second light guide cable 11, a light measuring device 12, at least one angle adjustment bracket including a first angle adjustment bracket 13, and a first emission microscope 15. In the first embodiment, an example in which the number of angle adjustment brackets is one is shown. The first light guide cable 10 and the second light guide cable 11 may be optical fibers. The first light guide cable 10 has a first end and a second end. The first end of the first light guide cable 10 is connected to the light generator 2. The second light guide cable 11 has a third end and a fourth end. The light measuring device 12 is connected to the fourth end of the second light guide cable 11. The first angle adjustment bracket 13 is disposed at the second end of the first light guide cable 10 and the third end of the second light guide cable 11. The first angle adjustment bracket 13 adjusts the second end of the first light guide cable 10 and the third end of the second light guide cable 11 to face the semiconductor light guide chip 3. The first angle adjustment bracket 13 can be a three-dimensional angle adjustment bracket. When the first angle adjustment bracket 13 is a three-dimensional angle adjustment bracket, the first angle adjustment bracket 13 adjusts the second end of the first light guide cable 10 and the third end of the second light guide cable 11 to rotate in the xy plane, the yz plane, or the zx plane. The first emission microscope 15 has an image capture surface facing the semiconductor light guide chip 3.

[0034] When the light generator 2 generates a light beam, the light beam is emitted to the semiconductor light guide chip 3 through the first light guide cable 10, and a light spot 4 is generated on the semiconductor light guide chip 3. The semiconductor light guide chip 3 guides the light beam to be emitted to the second light guide cable 11. The light measuring device 12 receives the light beam through the second light guide cable 11 and captures its energy. The first emission microscope 15 captures the light leakage position where the light beam dissipates from the semiconductor light guide chip 3, and measures an abnormality in the light guide path of the semiconductor light guide chip 3. The wavelength of the light beam may be, but is not limited to, 100 to 6000 nm. The light generator 2 may be a laser generator. When the light generator 2 is a laser generator, the light beam is a laser beam. Different light guide paths of the semiconductor light guide chip 3 correspond to light beams having different optical characteristics. The optical characteristics may be, for example, output, angle of incidence, scattering, oscillation, amplitude, refraction, reflection, and polarization. After the optical characteristics of the light beam are calibrated by the light generator 2, a light beam having specific optical characteristics is generated for a specific light guiding path of the semiconductor light guiding chip 3, and the abnormality of the specific light guiding path is measured.

[0035] In one embodiment of the present invention, the first emission microscope 15 includes an image sensor 150 and a metallographic microscope 151 connected to the image sensor 150. The image sensor 150 is a charge-coupled device and includes a plurality of photosensitive areas, an output amplifier, and a storage area. The photosensitive areas are electrically connected to the output amplifier. The output amplifier is electrically connected to the storage area. The photosensitive areas of the image sensor 150 are made of indium gallium arsenide, silicon, indium antimonide (InSb), mercury cadmium telluride (HgCdTe), or 2,5-dimercapto-1,3,4-thiadiazole (DMCT), and are used to receive invisible light such as infrared or far infrared light, but may also receive visible light. They are generally thin films and are provided on a silicon substrate. When the light beam dissipates from the semiconductor light-guiding chip 3, the image sensor 150 captures infrared light due to defects in the semiconductor light-guiding chip 3. The output amplifier is a transistor or a metal oxide semiconductor field effect transistor (MOSFET), converts the charge received in the photosensitive region into a voltage signal, and is generally provided at the end of the silicon substrate. The memory region stores the voltage signal changed by the output amplifier, and is generally made of metal or polycrystalline silicon material and provided on the silicon substrate. In addition, the metallographic microscope 151 is a high-magnification microscope for enlarging the light leakage position captured by the image sensor 150.

[0036] FIG. 2 is a structural schematic diagram of an optical loss measurement device according to a second embodiment of the present invention. The second embodiment of the optical loss measurement device will be described with reference to FIG. 2. The second embodiment is different from the first embodiment in that the number of angle adjustment brackets in the second embodiment is two, which are a first angle adjustment bracket 13 and a second angle adjustment bracket 14. The first angle adjustment bracket 13 and the second angle adjustment bracket 14 are arranged with the second end of the first light guide cable 10 and the third end of the second light guide cable 11, respectively, and adjust the second end of the first light guide cable 10 and the third end of the second light guide cable 11 to face the semiconductor light guide chip 3, respectively. The second angle adjustment bracket 14 can be a three-dimensional angle adjustment bracket. When the first angle adjustment bracket 13 and the second angle adjustment bracket 14 are three-dimensional angle adjustment brackets, the first angle adjustment bracket 13 and the second angle adjustment bracket 14 adjust the second end of the first light guide cable 10 and the third end of the second light guide cable 11 to rotate in the xy plane, the yz plane, or the zx plane, respectively. Other technical features of the second embodiment have been described in the first embodiment, so a duplicate description will be omitted.

[0037] FIG. 3 is a cross-sectional view of the structure of a semiconductor light guide chip according to an embodiment of the present invention. The following description will be given with reference to FIG. 3. The semiconductor light guide chip 3 may be a silicon photonic integrated circuit. The silicon photonic integrated circuit is an integrated circuit that manufactures photonic elements by a silicon process or a semiconductor process, and integrates optoelectronic components such as optical fibers, optical amplifiers, and optical modulators, and electronic components such as transistors, capacitors, and inductances, into one chip to realize highly efficient conversion between light and electricity. For example, the semiconductor light guide chip 3 has a silicon-on-insulator (SOI) substrate 30 and at least one optical element provided on the substrate. The optical element includes at least one passive optical element 31 and at least one active optical element 32. Examples of the passive optical element 31 include an optical waveguide, a directional coupler, a Mach-Zehnder interferometer, an annular resonant cavity, a grating coupler, and an edge coupler. Examples of the active optical element 32 include an optical modulator, an optical measuring instrument, and a laser diode. In other words, the at least one optical element is at least one selected from an optical waveguide, a directional coupler, a Mach-Zehnder interferometer, an annular resonant cavity, a grating coupler, an edge coupler, an optical modulator, an optical meter, and a laser diode, or a combination thereof. In one embodiment, the semiconductor light-guiding chip 3 is a semiconductor photoelectric conversion chip, and further includes at least one electronic component 33 disposed on the silicon-coated insulating substrate 30. The electronic component 33 can be, for example, a transimpedance amplifier, an application specific integrated circuit (ASIC), or a driver integrated circuit.

[0038] FIG. 4 is a structural schematic diagram of an optical loss measurement device according to a third embodiment of the present invention. The third embodiment of the optical loss measurement device 1 will be described with reference to FIG. 4. The third embodiment is different from the second embodiment in that it further includes at least one host computer 16 and a platform 17 for holding the semiconductor light-guiding chip 3. In the third embodiment, the first angle adjustment bracket 13 and the second angle adjustment bracket 14 are automated three-dimensional angle adjustment brackets. The number of host computers 16 can be adjusted according to demand. For convenience of description, an example in which the number of host computers 16 is one will be described. The host computer 16 is electrically connected to the automated three-dimensional angle adjustment bracket to adjust the angle of the second end of the first light-guiding cable 10 and the third end of the second light-guiding cable 11 relative to the semiconductor light-guiding chip 3. In one embodiment, the host computer 16 is electrically connected to the light generator 2, the light measurement device 12, and the image sensor 150 of the first emission microscope 15. The host computer 16 obtains the total energy of the light beam from the light generator 2, obtains the remaining energy of the light beam from the light measuring device 12, and calculates the light loss energy of the light beam at the light leakage position based on the total energy and the remaining energy. FIG. 5 is a structural schematic diagram of an optical loss measurement device according to a fourth embodiment of the present invention. The fourth embodiment of the optical loss measurement device 1 will be described with reference to FIG. 5. Compared with the second embodiment, the fourth embodiment further includes a first mounting base 18, a second mounting base 19, a third angle adjustment bracket 13', and a fourth angle adjustment bracket 14'. In addition, the semiconductor light guide chip 3 is a semiconductor photoelectric conversion chip. The first mounting base 18 has a first outer mounting surface and a second outer mounting surface that face each other. The first angle adjustment bracket 13 is fixed to the first outer mounting surface of the first mounting base 18. The second mounting base 19 has a third outer mounting surface and a fourth outer mounting surface that face each other. The second angle adjustment bracket 14 is fixed to the third outer mounting surface of the second mounting base. The semiconductor photoelectric conversion chip is electrically connected to an electrical parameter measuring instrument 7 via a first electric wire 5 and a second electric wire 6. The electrical parameter measuring instrument 7 measures electrical parameters of the semiconductor photoelectric conversion chip, such as voltage and current. The third angle adjustment bracket 13' is fixed to a second outer mounting surface of the first mounting base 18. The fourth angle adjustment bracket 14' is fixed to a fourth outer mounting surface of the second mounting base 19.The third angle-adjustable bracket 13' and the fourth angle-adjustable bracket 14' are connected to the first electric wire 5 and the second electric wire 6, respectively. In one embodiment of the present invention, the third angle-adjustable bracket 13' and the fourth angle-adjustable bracket 14' are three-dimensional angle-adjustable brackets. When the third angle-adjustable bracket 13' and the fourth angle-adjustable bracket 14' are three-dimensional angle-adjustable brackets, the third angle-adjustable bracket 13' and the fourth angle-adjustable bracket 14' adjust the first electric wire 5 and the second electric wire 6 to rotate in the xy plane, the yz plane, or the zx plane, respectively.

[0039] FIG. 6 is a structural schematic diagram of an optical loss measurement device according to a fifth embodiment of the present invention. The fifth embodiment of the optical loss measurement device 1 will be described with reference to FIG. 6. The fifth embodiment is different from the fourth embodiment in that it further includes a second emission microscope 15'. The second emission microscope 15' has an image capture surface facing the semiconductor photoelectric conversion chip. When the semiconductor photoelectric conversion chip performs photoelectric conversion on the light beam, the second emission microscope 15' includes an image sensor 150' and a metallographic microscope 151' connected to the image sensor 150', and captures the light leakage position where the light beam dissipates from the semiconductor photoelectric conversion chip. The image sensor 150' is a charge-coupled element and includes a plurality of photosensitive areas, an output amplifier, and a storage area. The photosensitive areas are electrically connected to the output amplifier. The output amplifier is electrically connected to the storage area. The photosensitive region of the image sensor 150' is made of indium gallium arsenide, silicon, indium antimonide (InSb), mercury cadmium telluride (HgCdTe), or 2,5-dimercapto-1,3,4-thiadiazole (DMCT), and is used to receive invisible light such as infrared or far infrared, but may also receive visible light, and is generally in the form of a thin film and provided on a silicon substrate. When a light beam is dissipated from the semiconductor photoelectric conversion chip, the image sensor 150' captures the infrared light due to defects in the semiconductor photoelectric conversion chip. The output amplifier is a transistor or a metal oxide semiconductor field effect transistor (MOSFET), which converts the charge received by the photosensitive region into a voltage signal, and is generally provided at the edge of the silicon substrate. The storage region stores the voltage signal modified by the output amplifier, and is generally made of a metal or polycrystalline silicon material and provided on the silicon substrate. Moreover, the metallographic microscope 151' is a high-magnification microscope for enlarging the light leakage position captured by the image sensor 150'.

[0040] According to the above embodiment, the optical loss measurement device captures the energy of the light beam that has passed through the semiconductor light-guiding chip using an optical measuring instrument, captures the light leakage position where the light beam dissipates from the semiconductor light-guiding chip using a first emission microscope, and measures abnormalities in the light-guiding path of the semiconductor light-guiding chip.

[0041] The present invention is not limited to the above embodiments, and all equivalent modifications made based on the scope of the claims of the present invention are included in the present invention. [Explanation of symbols]

[0042] 1 Optical loss measuring device 10 First light guide cable 11 Second light guide cable 12 Light measuring instrument 13 First angle adjustment bracket 14 Second angle adjustment bracket 15 First Emission Microscope 150 Image Sensor 151 Metallographic Microscope 13' 3rd Angle Adjustment Bracket 14' 4th angle adjustment bracket 15' Second Emission Microscope 150' image sensor 151' Metallographic Microscope 16 Host Computer 17 Platform 18 First mounting stand 19 Second mounting stand 2 Light Generator 3. Semiconductor light guide chip 30 Silicone-coated insulating substrate 31 Passive Optical Elements 32 Active Optical Elements 33 Electronic Components 4 light points 5. First Wire 6. Second Wire 7 Electrical Parameter Measuring Instruments

Claims

1. a first light guide cable, a second light guide cable, a light measuring device, at least one angle adjustment bracket, and a first emission microscope; the first light guiding cable has a first end and a second end; the first end of the first light guiding cable is connected to a light generator; the second light guiding cable has a third end and a fourth end; the optical measurement device is connected to the fourth end of the second optical guide cable; the at least one angle adjustment bracket is arranged with the second end of the first light guide cable and the third end of the second light guide cable, and adjusts the second end of the first light guide cable and the third end of the second light guide cable to face a semiconductor light guide chip, respectively; the first emission microscope has an image capture surface facing the semiconductor light guide chip; When the light generator generates a light beam, the light beam is emitted to the semiconductor light guiding chip through the first light guiding cable, the semiconductor light guiding chip guides the light beam to be emitted to the second light guiding cable, the light measuring device receives the light beam through the second light guiding cable and captures the energy of the light beam, and the first emission microscope captures a light leakage position where the light beam dissipates from the semiconductor light guiding chip. Optical loss measuring device.

2. the at least one angle adjustment bracket comprises a first angle adjustment bracket and a second angle adjustment bracket; the first angle adjustment bracket and the second angle adjustment bracket, on which the second end of the first light guide cable and the third end of the second light guide cable are respectively arranged, adjust the second end of the first light guide cable and the third end of the second light guide cable so as to face the semiconductor light guide chip, 2. The optical loss measuring device according to claim 1.

3. The first angle adjustment bracket and the second angle adjustment bracket are three-dimensional angle adjustment brackets.

3. The optical loss measuring device according to claim 2.

4. The three-dimensional angle adjustment bracket is an automated three-dimensional angle adjustment bracket; 4. The optical loss measuring device according to claim 3.

5. Further comprising at least one host computer; The host computer is electrically connected to the automated three-dimensional angle adjustment bracket to adjust the angle of the second end of the first light guide cable and the third end of the second light guide cable relative to the semiconductor light guide chip.

5. The optical loss measuring device according to claim 4.

6. the at least one host computer is electrically connected to the light generator, the light measurement instrument, and the first emission microscope, and is configured to calculate a light loss energy of the light beam at the light leakage location; 6. The optical loss measuring device according to claim 5.

7. The first emission microscope has an image sensor and a metallographic microscope connected to the image sensor.

2. The optical loss measuring device according to claim 1.

8. The semiconductor light-guiding chip has a silicon-on-insulator (SOI) substrate, and at least one or a combination of an optical waveguide, a directional coupler, a Mach-Zehnder interferometer, an annular resonant cavity, a grating coupler, an edge coupler, an optical modulator, an optical measuring instrument, and a laser diode provided on the silicon-coated insulating substrate; 2. The optical loss measuring device according to claim 1.

9. Further comprising a platform for holding the semiconductor light guide chip.

2. The optical loss measuring device according to claim 1.

10. the first light guiding cable and the second light guiding cable are optical fibers; 2. The optical loss measuring device according to claim 1.

11. the light generator is a laser generator; The light beam is a laser beam.

2. The optical loss measuring device according to claim 1.

12. The sensor further includes a first mounting base and a second mounting base, The first mounting base has a first outer mounting surface and a second outer mounting surface opposed to each other, the first angle adjustment bracket is fixed to the first outer mounting surface of the first mounting base, the second mounting base has a third outer mounting surface and a fourth outer mounting surface opposed to each other, The second angle adjustment bracket is fixed to the third outer mounting surface of the second mounting base.

3. The optical loss measuring device according to claim 2.

13. The semiconductor light guide chip is a semiconductor photoelectric conversion chip; 13. The optical loss measurement apparatus according to claim 12.

14. The semiconductor photoelectric conversion chip is electrically connected to an electrical parameter measuring device via a first wire and a second wire; The electrical parameter measuring device measures the electrical parameters of the semiconductor photoelectric conversion chip.

14. The optical loss measurement device according to claim 13.

15. The angle adjustment bracket includes a third angle adjustment bracket and a fourth angle adjustment bracket, the third angle adjustment bracket is fixed to the second outer mounting surface of the first mounting base, the fourth angle adjustment bracket is fixed to the fourth outer mounting surface of the second mounting base, The third angle adjustment bracket and the fourth angle adjustment bracket are connected to the first electric wire and the second electric wire, respectively.

15. The optical loss measurement apparatus according to claim 14.

16. The third angle adjustment bracket and the fourth angle adjustment bracket are three-dimensional angle adjustment brackets.

16. The optical loss measurement apparatus according to claim 15.

17. Further comprising a second Emission Microscope; the second emission microscope has an image capture surface facing the semiconductor photoelectric conversion chip; When the semiconductor photoelectric conversion chip performs photoelectric conversion on the light beam, the second emission microscope captures a light leakage position where the light beam is scattered from the semiconductor photoelectric conversion chip.

16. The optical loss measurement apparatus according to claim 15.

18. The second emission microscope has an image sensor and a metallographic microscope connected to the image sensor.

18. The optical loss measurement apparatus according to claim 17.

Images