Image sensor module

Abstract

To provide an image sensor module.SOLUTION: An image sensor module includes a substrate, an optical sensor element placed on the substrate, and a light guide member having a first light adjustment layer with a first translucent area and a second light adjustment layer disposed over the first light adjustment layer and having a second translucent area, and placed over the optical sensor element, and the first and second translucent areas correspond to optical sensor elements, respectively.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a sensor module, and more particularly to an image sensor module. [Background technology]

[0002] Contact Image Sensors (CIS) are used to scan flat documents with graphics and text and convert them into electronic format for subsequent storage, display, and transmission. Contact Image Sensors are mainly used in scanners, facsimiles, and multifunction printers.

[0003] A contact image sensor works by shining light from a light source onto the document to be scanned, reflecting the light off the document, and using a group of lenses to focus the reflected light onto a photosensitive element such as a Charge-Coupled Device (CCD) or Complementary Metal Oxide Semiconductor (CMOS). The photosensitive element is used to convert the optical signal into an electrical signal, generating analog or digital pixel data. Summary of the Invention [Problem to be solved by the invention]

[0004] Most conventional contact image sensors use a rod lens to focus an image illuminated by a light source onto a charge-coupled device, and convert optical and electrical signals to obtain analog or digital data.

[0005] However, the imaging principle of the rod lens has a limited depth of field, so the scanned object must be placed very flat at a specific position. In addition, if you try to improve the depth of field, the volume and image distance of the rod lens will increase significantly, or the aperture will shrink, which will significantly increase the volume of the image sensor module and the finished product, and increase the cost.

[0006] Therefore, there is an urgent need to provide an image sensor module that can increase the imaging depth of field and reduce the volume and manufacturing costs.

[0007] SUMMARY OF THE PRESENT EMBODIMENT An object of the present invention is to provide an image sensor module capable of improving the imaging depth of field and reducing the volume and manufacturing costs. [Means for solving the problem]

[0008] In order to achieve the above object, the image sensor module of the present invention includes a substrate, a light sensor element arranged on the substrate, a first light adjustment layer having a first light-transmitting region, and a second light adjustment layer arranged on the first light adjustment layer and having a second light-transmitting region, and a light-guiding member arranged on the light sensor element, wherein the first light-transmitting region and the second light-transmitting region each correspond to the light sensor element.

[0009] In some embodiments, the image sensor module further includes a lens layer disposed on the light-guiding member and having a plurality of lens elements respectively corresponding to the light sensor elements.

[0010] In some embodiments, each of the lens elements corresponds to a photo sensor element.

[0011] In some embodiments, the lens elements are staggered with respect to one another, and the photosensor elements correspond to at least two of the lens elements.

[0012] In some embodiments, the first optically transparent region has a first opening and the second optically transparent region has a second opening, the second opening being greater than or equal to the first opening.

[0013] In some embodiments, the first light adjusting layer and the second light adjusting layer are disposed at a first distance.

[0014] In some embodiments, the light-guiding member further includes a third light adjustment layer disposed on the second light adjustment layer, the third light adjustment layer having a third light-transmitting region corresponding to the light sensor element.

[0015] In some embodiments, the first light-transmitting region has a first opening, the second light-transmitting region has a second opening, and the third light-transmitting region has a third opening, the second opening being larger than or equal to the first opening, and the third opening being larger than or equal to the second opening.

[0016] In some embodiments, the first light adjusting layer and the second light adjusting layer are disposed at a first interval, and the second light adjusting layer and the third light adjusting layer are disposed at a second interval.

[0017] Another image sensor module according to the present invention includes a substrate, a light sensor element disposed on the substrate, and a light adjustment structure having a plurality of light-transmitting regions corresponding to the light sensor element, wherein a light-guiding member is disposed on the light sensor element, and an opening of each of the plurality of light-transmitting regions gradually narrows along a light incidence direction.

[0018] In some embodiments, the light adjusting structure includes a plurality of light adjusting layers arranged along the light incident direction, and the plurality of light-transmitting regions are disposed in the plurality of light adjusting layers.

[0019] In some embodiments, adjacent two of the plurality of light adjusting layers are disposed with a gap therebetween, and the plurality of gaps are in a preset proportional relationship with each other.

[0020] Another image sensor module according to the present invention includes a substrate, a light sensor element disposed on the substrate, a light adjustment layer having a plurality of light-transmitting regions corresponding to the light sensor element and light-shielding regions disposed around the plurality of light-transmitting regions, and a light-guiding member disposed on the light sensor element. Effect of the Invention

[0021] The light guide member of the image sensor module according to the present invention includes a light adjustment layer or a light adjustment structure, and the light adjustment layer or the light adjustment structure has a light-transmitting region corresponding to the light sensor element. The light adjustment layer or the light adjustment structure allows only light at a specific angle to be incident on the light sensor element. In other words, the image sensor module according to the present invention can block stray light by the light adjustment layer or the light adjustment structure, and can image only light at a specific angle on the light sensor element through the light-transmitting region. This allows the image sensor module according to the present invention to effectively increase the imaging depth of field on the light sensor element. Furthermore, the light adjustment layer or the light adjustment structure of the present invention can be formed on the light sensor element by, for example, a semiconductor process, thereby further reducing the overall volume and manufacturing cost.

[0022] The objects and features of the present invention will be better understood by reference to the detailed description of the invention and the accompanying drawings, which are provided for reference and explanation only and are not intended to limit the invention. [Brief description of the drawings]

[0023] [Figure 1] 1 is a schematic diagram showing an image sensor device according to the present invention; [Diagram 2] 2 is a cross-sectional view of the image sensor module according to the first embodiment of the present invention taken along line AA in FIG. 1. [Diagram 3] FIG. 5 is a cross-sectional view of an image sensor module according to a second embodiment of the present invention. [Figure 4] 10A and 10B are cross-sectional views showing a modified embodiment of an image sensor module according to the present invention. [Diagram 5] 10A and 10B are cross-sectional views showing a modified embodiment of an image sensor module according to the present invention. [Figure 6A] FIG. 11 is a cross-sectional view of an image sensor module according to a third embodiment of the present invention. [Figure 6B] FIG. 11 is a plan view of an image sensor module according to a third embodiment of the present invention. [Figure 7A]7B is a cross-sectional view of the image sensor module according to the fourth embodiment of the present invention taken along line BB in FIG. 7B. [Figure 7B] FIG. 11 is a plan view of an image sensor module according to a fourth embodiment of the present invention. [Figure 8] 1 is a schematic plan view showing a modified embodiment of an image sensor module according to the present invention; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0024] The terms "first," "second," "third," "fourth," and the like, as used herein, are intended to describe various components, assemblies, regions, layers, and / or portions, and these components, assemblies, regions, layers, and / or portions should not be limited by these terms. These terms are used only to distinguish one component, assembly, region, layer, or portion from other elements. The terms "first," "second," "third," "fourth," and the like, as used herein, do not imply any order or sequence unless the context clearly indicates otherwise.

[0025] Fig. 1 is a schematic diagram showing an image sensor device according to the present invention Fig. 2 is a cross-sectional view of an image sensor module according to a first embodiment of the present invention taken along line AA in Fig. 1.

[0026] As shown in FIG. 1 and FIG. 2, the image sensor device 9 may include, but is not limited to, a housing 91, a light source module 92, a circuit board 93, and an image sensor module 1. The light source module 92, the circuit board 93, and the image sensor module 1 are disposed in the housing 91, and the light source module 92 and the image sensor module 1 are all electrically connected to the circuit board 93. In some embodiments, the light source module 92 may include a light emitting element 921 and a light guiding element 922, and the light emitting element 921 is disposed, for example, on one side of the light guiding element 922, and the light guiding element 922 can convert the light emitted by the light emitting element 921 into a linear light source. In addition, the image sensor device 9 may be, for example, a linear contact image sensor device. The contact image sensor device scans and converts documents having flat graphics, text, etc. into a specific electronic format for subsequent storage, display, and transmission. Main applications of the contact image sensor device include desktop scanners, portable scanners, facsimiles, multifunction machines, copiers, etc.

[0027] The image sensor module 1 includes a substrate 11, a light sensor element 12, and a light guiding member 13. The substrate 11 is, for example, an elongated substrate having a long axis A1 corresponding to the long axis of the light source module 92. The substrate 11 may be a semiconductor substrate, for example, a silicon substrate, but is not limited thereto.

[0028] The light sensor element 12 is disposed on the substrate 11. The image sensor module 1 may include one light sensor element 12 or multiple light sensor elements 12, but is not limited in this specification. In the present embodiment, the image sensor module 1 is described by taking the case where the image sensor module 1 has multiple light sensor elements 12 as an example, but is not limited thereto. In some embodiments, the multiple light sensor elements 12 are linearly disposed on the substrate 11, that is, the multiple light sensor elements 12 are arranged along the long axis A1 of the substrate 11. In particular, the interval between the multiple light sensor elements 12 is not limited and may be different according to different requirements. The light sensor element 12 may be, for example, but is not limited to, a photosensitive element such as a photodiode.

[0029] The light guiding member 13 is disposed on the multiple light sensor elements 12. The light guiding member 13 includes a first light adjustment layer 131 and a second light adjustment layer 132, and the second light adjustment layer 132 is disposed on the first light adjustment layer 131. The first light adjustment layer 131 and the second light adjustment layer 132 together configure a light adjustment structure LA1. The first light adjustment layer 131 has a first light transmitting region 131A, and the second light adjustment layer 132 has a second light transmitting region 132A.

[0030] The first light-transmitting region 131A and the second light-transmitting region 132A each correspond to a plurality of light sensor elements 12. The first light adjustment layer 131 and the second light adjustment layer 132 each have light-shielding regions 131B and 132B in addition to the light-transmitting regions 131A and 132A. The light-shielding regions 131B and 132B are disposed around the plurality of light-transmitting regions 131A and 132A. The first light-transmitting region 131A is, for example, a plurality of openings disposed in the first light adjustment layer 131, and the second light-transmitting region 132A is, for example, a plurality of openings disposed in the second light adjustment layer 132, and the openings of the first light-transmitting region 131A and the openings of the second light-transmitting region 132A are aligned with each other. For example, the central axes of the openings of the first light-transmitting region 131A and the openings of the second light-transmitting region 132A are aligned with each other. In other embodiments, the central axes of the openings of the first light-transmitting region and the openings of the second light-transmitting region may be slightly misaligned, but in principle they correspond to the positions of the multiple light sensor elements 12. Light-shielding region 131B and light-shielding region 132B are portions of first light adjustment layer 131 and second light adjustment layer 132 other than the openings.

[0031] In the present embodiment, one opening of the first light-transmitting region 131A and one opening of the second light-transmitting region 132A each correspond to one light sensor element 12, but this is not limited to this. For example, two or more openings of the first light-transmitting region 131A and two or more openings of the second light-transmitting region 132A may each be arranged to correspond to one light sensor element 12.

[0032] In some embodiments, the light adjustment structure LA1 may be formed on the substrate 11 using a semiconductor process. For example, a first light adjustment layer 131 made of an opaque material is coated on the substrate 11 and the light sensor element 12, and an opening of the first light-transmitting region 131A is formed by etching. Next, a light-transmitting material 14 is formed on the first light adjustment layer 131, and then a second light adjustment layer 132 made of an opaque material is coated on the light-transmitting material 14. Similarly, an opening of the second light-transmitting region 132A is formed by etching. Finally, the light-transmitting material 14 is formed on the second light adjustment layer 132, and a planarization process or a slimming process is used to make the upper surface of the light-transmitting material 14 flush with the upper surface of the second light adjustment layer 132, and a protective layer 15 is formed on the light-transmitting material 14 and the second light adjustment layer 132. These processes are not intended to limit the present invention, and different processes can be used according to different requirements. It should be noted that the thicknesses of the first light adjustment layer 131, the second light adjustment layer 132, and the light-transmitting material 14 are not limited.

[0033] In some embodiments, the first light-transmitting region 131A has a first opening AP1, and the second light-transmitting region 132A has a second opening AP2, and the second opening AP2 is larger than or equal to the first opening AP1. In the present embodiment, the second opening AP2 is larger than the first opening AP1 as an example, but is not limited thereto.

[0034] Therefore, after a light ray enters the light guide member 13 along the light incident direction L, the light transmitting regions 131A, 132A of the first light adjustment layer 131 and the second light adjustment layer 132 allow only the light ray at a specific angle (for example, perpendicular to the light incident surface) to enter the light sensor element 12 along the light incident direction L, and the light blocking regions 131B, 132B can block stray light. In other words, the light guide member 13 may function like a collimator, and the light transmitting regions 131A, 132A of the first light adjustment layer 131 and the second light adjustment layer 132 may form a structure like an aperture.

[0035] As described above, the image sensor module 1 according to this embodiment may be configured to block stray light by the light guiding member 13 functioning as a collimator, and to focus only light at a specific angle on the light sensor element 12 through the light transmitting regions 131A, 132A. In addition, the light transmitting regions 131A, 132A of the light adjustment layers 131, 132 function as a small aperture structure, thereby expanding the imaging range of the light sensor element 12 and effectively improving the imaging depth of field on the light sensor element 12. Furthermore, the light adjustment layers 131, 132 of this embodiment are formed on the light sensor element 12 by, for example, a semiconductor process, thereby further reducing the overall volume and manufacturing cost.

[0036] FIG. 3 is a cross-sectional view of an image sensor module 2 according to a second embodiment of the present invention. The image sensor module 2 according to the second embodiment is different from the image sensor module 1 according to the first embodiment in that the light guide member 23 further includes a third light adjustment layer 233 arranged on the second light adjustment layer 232 and a fourth light adjustment layer 234 arranged on the third light adjustment layer 233. The third light adjustment layer 233 has a third light transmitting region 233A, and the fourth light adjustment layer 234 has a fourth light transmitting region 234A. The third light transmitting region 233A and the fourth light transmitting region 234A each correspond to a plurality of light sensor elements 22. Note that the light adjustment structure LA2 of this embodiment will be described using four light adjustment layers 231, 232, 233, and 234 as an example, but is not limited thereto. The light adjustment structure LA2 may include, for example, only three light adjustment layers, or may include five or more light adjustment layers.

[0037] Similarly, the third light-transmitting region 233A is, for example, a plurality of openings arranged in the third light adjustment layer 233, and the fourth light-transmitting region 234A is, for example, a plurality of openings arranged in the fourth light adjustment layer 234, and the openings of the third light-transmitting region 233A and the openings of the fourth light-transmitting region 234A are aligned with each other. For example, the central axes of the openings of the first light-transmitting region 231A, the second light-transmitting region 232A, the third light-transmitting region 233A, and the fourth light-transmitting region 234A are aligned. In some other embodiments, the central axes of the multiple openings may be slightly shifted, but in principle correspond to the positions of the multiple light sensor elements 22.

[0038] In some embodiments, the third light-transmitting region 233A has a third opening AP3, the fourth light-transmitting region 234A has a fourth opening AP4, the second opening AP2 is larger than or equal to the first opening AP1, the third opening AP3 is larger than or equal to the second opening AP2, and the fourth opening AP4 is larger than or equal to the third opening AP3. In this embodiment, the second opening AP2 is larger than the first opening AP1, the third opening AP3 is larger than the second opening AP2, and the fourth opening AP4 is larger than the third opening AP3. That is, the openings AP1, AP2, AP3, and AP4 of the light-transmitting regions 231A, 232A, 233A, and 234A gradually shrink along the light incident direction L, but are not limited thereto.

[0039] In some embodiments, when the apertures AP1, AP2, AP3, and AP4 are gradually reduced along the light incident direction L, the apertures AP1, AP2, AP3, and AP4 may have a preset proportional relationship, for example, the ratio of the apertures AP1:aperture AP2:aperture AP3:aperture AP4 may be 1.0-4.0:10.0-15.0:15.0-20.0:30.0-40.0. As another example, the ratio of the apertures AP1:aperture AP2:aperture AP3:aperture AP4 may be 1.0:10.0:15.0:30.0. As another example, the ratio of the apertures AP1:aperture AP2:aperture AP3:aperture AP4 may be 2.0:11.0:16.0:31.0. As another example, the ratio of the apertures AP1:aperture AP2:aperture AP3:aperture AP4 may be 2.1:12.0:17.0:32.0. As another example, the ratio of the aperture AP1:aperture AP2:aperture AP3:aperture AP4 may be 2.5:13.0:18.0:35.0. As another example, the ratio of the aperture AP1:aperture AP2:aperture AP3:aperture AP4 may be 2.4:12.0:18.0:37.0. As another example, the ratio of the aperture AP1:aperture AP2:aperture AP3:aperture AP4 may be 3.5:14.0:19.0:38.0. As another example, the ratio of the aperture AP1:aperture AP2:aperture AP3:aperture AP4 may be 4.0:15.0:20.0:40.0. The above are merely some of the examples given as examples, and do not limit the present invention, and the ratio of the apertures AP1, AP2, AP3, and AP4 can be adjusted as necessary.

[0040] 4 is a cross-sectional view showing a modified embodiment of the image sensor module 2A according to the present invention. As shown in FIG. 4, the openings AP1, AP2, AP3, and AP4 may be the same. That is, the second opening AP2 is equal to the first opening AP1, the third opening AP3 is equal to the second opening AP2, and the fourth opening AP4 is equal to the third opening AP3. In this way, the imaging depth of field on the light sensor element 22 can be effectively improved.

[0041] Also referring to FIG. 3, in some embodiments, the opening AP1 and the height H (which is the total height of the light guide member 23, the protective layer 25, and the base layer 26. Note that, when the protective layer 25 and the base layer 26 are not provided, the height H is the total height of the light guide member 23) may have a preset proportional relationship, and for example, the ratio of the opening AP1: the height H may be 1.0 to 2.0: 80.0 to 90.0. For example, the ratio of the opening AP1: the height H may be 1.0: 80.0. For example, the ratio of the opening AP1: the height H may be 1.2: 85.0. For example, the ratio of the opening AP1: the height H may be 1.0: 87.0. For example, the ratio of the opening AP1: the height H may be 1.0: 88.3. For example, the ratio of the opening AP1: the height H may be 1.7: 89.5. Also, for example, the ratio of the aperture AP1 to the height H may be 2.0:90.0. The above are merely some of the exemplary embodiments, and do not limit the present invention. In other words, for example, the lower the ratio of the aperture AP1 to the height H, the lower the amount of received light, and the deeper the imaging depth of field. Similarly, the higher the ratio of the aperture AP1 to the height H, the higher the amount of received light, and the shallower the depth of field. The ratio of the aperture AP1 to the height H can be adjusted as necessary.

[0042] Also, the first light adjustment layer 231 and the second light adjustment layer 232 may be disposed at a first interval D1, the second light adjustment layer 232 and the third light adjustment layer 233 may be disposed at a second interval D2, and the third light adjustment layer 233 and the fourth light adjustment layer 234 may be disposed at a third interval D3. The intervals D1, D2, and D3 (i.e., the thickness of the light-transmitting material between the light adjustment layers) may be the same or different. In some embodiments, when the intervals D1, D2, and D3 are different, they may have a preset proportional relationship with each other, for example, the ratio of the interval D1: the interval D2: the interval D3 may be 50.0 to 70.0: 40.0 to 60.0: 120.0 to 140.0. As another example, the ratio of the interval D1: the interval D2: the interval D3 may be 50.0: 40.0: 120.0. As another example, the ratio of the intervals D1:D2:D3 may be 60.0:45.0:125.0. As another example, the ratio of the intervals D1:D2:D3 may be 68.4:42.2:137.0. As another example, the ratio of the intervals D1:D2:D3 may be 70.0:55.6:130.5. As another example, the ratio of the intervals D1:D2:D3 may be 58.0:60.0:140.0. In other words, the intervals (D1, D2, D3) and their ratios can be adjusted to block stray light paths between adjacent optical sensor elements. The above are merely some exemplary aspects and do not limit the present invention, and the ratio of the intervals D1, D2, D3 can be adjusted as necessary.

[0043] FIG. 5 is a cross-sectional view showing a modified embodiment of the image sensor module 2B according to the present invention. As shown in FIG. 5, there may be no gap between the light adjustment layers 231, 232, 233, 234. That is, the gap between the light adjustment layers 231, 232, 233, 234 is zero. The light adjustment layers 231, 232, 233, 234 may be formed (separately formed) in different process steps, or may be formed (continuously formed) in a single process step. In this way, the process difficulty of the light guide member 23B can be reduced while effectively improving the imaging depth of field on the light sensor element 22.

[0044] Also referring to FIG. 3, in some embodiments, the image sensor module 2 may further include an opaque layer 24 disposed on both side surfaces 235 of the light guide member 23. The opaque layer 24 may be, for example, black plating or painting, and may be disposed on both side surfaces 235 of the light guide member 23 to block stray light in the lateral direction. In this way, the stray light can be blocked by the light guide member 23 (functioning as a collimator) or the outer periphery of the light adjustment structure LA2. Furthermore, by reducing the stray light, the imaging depth of field on the light sensor element 22 can be effectively improved.

[0045] In some embodiments, the image sensor module 2 may further include an underlayer 26 disposed between the light guide member 23 and the substrate 21. The underlayer 26 is, for example, a light-transmitting material. The underlayer 26 allows the process of the image sensor module 2 to be divided into a front stage and a rear stage. That is, after the process of disposing a plurality of light sensor elements 22 on the substrate 21, the underlayer 26 is formed on the substrate 21 and the light sensor elements 22, and then the light guide member 23 is formed on the underlayer 26. Of course, a protective layer 25 may be formed on the light guide member 23. In this way, the light sensor elements 22 and the light guide member 23 may be formed using different semiconductor processes. The above processes do not limit the present invention, and different processes may be used according to different requirements.

[0046] As described above, the image sensor module 2 according to this embodiment may be configured to block stray light by the light guiding member 23 functioning as a collimator, and to image only light at a specific angle on the light sensor element 22 through the light transmitting areas 231A, 232A, 233A, and 234A. In addition, the light transmitting areas 231A, 232A, 233A, and 234A of the light adjustment layers 231, 232, 233, and 234 function as small aperture structures, thereby expanding the imaging range of the light sensor element 22 and effectively improving the imaging depth of field on the light sensor element 22. Furthermore, the light adjustment layers 231, 232, 233, and 234 of this embodiment are formed on the light sensor element 22 by, for example, a semiconductor process, thereby further reducing the overall volume and manufacturing cost. Furthermore, the image sensor module 2 may block stray light in the lateral direction by the opaque layer 24, thereby reducing the stray light, thereby effectively improving the imaging depth of field on the light sensor element 22. Furthermore, in the image sensor module 2, the light sensor element 22 and the light guide member 23 may be formed using different semiconductor processes due to the underlayer 26.

[0047] FIG. 6A is a cross-sectional view of an image sensor module 3 according to a third embodiment of the present invention. FIG. 6B is a plan view of an image sensor module 3 according to a third embodiment of the present invention. As shown in FIG. 6A and FIG. 6B, the image sensor module 3 according to the third embodiment is different from the image sensor module 2 according to the second embodiment in that the image sensor module 3 further includes a lens layer 37 disposed on the light guide member 33. The lens layer 37 has a plurality of lens elements 371, and the plurality of lens elements 371 correspond to the light sensor elements 32 or the light transmitting regions 331A, 332A, 333A, and 334A, respectively. In other words, each lens element 371 may be disposed corresponding to each light sensor element 32, but does not correspond to the light transmitting regions 331A, 332A, 333A, and 334A. Alternatively, each lens element 371 may be disposed corresponding to the light transmitting regions 331A, 332A, 333A, and 334A, but does not correspond to each light sensor element 32. Of course, each lens element 371 may be disposed corresponding to each light sensor element 32 and the light transmitting areas 331A, 332A, 333A, and 334A at the same time.

[0048] The lens element 371 and the openings of the light-transmitting regions 331A, 332A, 333A, and 334A are aligned with each other. For example, the central axes of the lens element 371 and the openings of the light-transmitting regions 331A, 332A, 333A, and 334A are aligned. In this embodiment, one lens element 371 and one opening of the light-transmitting regions 331A, 332A, 333A, and 334A each correspond to one optical sensor element 32, but this is not limited thereto. For example, two or more lens elements 371 and two or more openings of the light-transmitting regions 331A, 332A, 333A, and 334A may each be disposed to correspond to one optical sensor element 32.

[0049] In some embodiments, the curvature diameter RoC and the height H (the total height of the light guide member 23, the protective layer 25, and the foundation layer 26) of the lens element 371 may have a preset proportional relationship. For example, the ratio of the curvature diameter RoC: the height H may be 1.00 to 2.00: 2.00 to 3.00. As another example, the ratio of the curvature diameter RoC: the height H may be 1.00: 2.00. As another example, the ratio of the curvature diameter RoC: the height H may be 1.15: 2.50. As another example, the ratio of the curvature diameter RoC: the height H may be 1.00: 2.70. As another example, the ratio of the curvature diameter RoC: the height H may be 1.00: 2.83. As another example, the ratio of the curvature diameter RoC: the height H may be 1.50: 3.00. As another example, the ratio of the curvature diameter RoC: the height H may be 2.00: 3.00. The above are merely some exemplary embodiments, and are not intended to limit the present invention. In other words, the relationship between the diameter of curvature RoC and the height H of the lens element 371 can be summarized by the following lens design formula:

[0050]

number

[0051] Here, n is the refractive index of the light-transmitting material. Note that the proportion between the curvature diameter RoC and the height H is not actually adjustable, but is determined by the parameter (n) of the light-transmitting material (or collimator material). The proportion between the curvature diameter RoC and the height H can be adjusted as needed.

[0052] In some embodiments, the arc diameter D and the maximum aperture (e.g., aperture AP4) of the lens element 371 are smaller than or equal to the spacing 321 between adjacent photosensor elements 32. For example, the arc diameter D of the lens element 371 may be 30.0 μm to 40.0 μm, and the spacing 321 between adjacent photosensor elements 32 may be 40.0 to 50.0 μm. As another example, the arc diameter D of the lens element 371 may be 30.0 μm, and the spacing 321 between adjacent photosensor elements 32 may be 40.0 μm. As another example, the arc diameter D of the lens element 371 may be 35.2 μm, and the spacing 321 between adjacent photosensor elements 32 may be 43.7 μm. Furthermore, for example, the arc diameter D of the lens element 371 may be 40.0 μm, and the spacing 321 between adjacent photosensor elements 32 may be 40.0 μm. Also, for example, the arc diameter D of the lens element 371 may be 39.0 m, and the interval 321 between adjacent optical sensor elements 32 may be 42.3 μm. Furthermore, for example, the arc diameter D of the lens element 371 may be 38.5 m, and the interval 321 between adjacent optical sensor elements 32 may be 44.6 μm. The above are merely some embodiments given as examples, and are not intended to limit the present invention, and the arc diameter D and the interval 321 can be adjusted as necessary.

[0053] As described above, the image sensor module 3 according to this embodiment may be configured to block stray light by the light guide member 33 functioning as a collimator, and to focus only light at a specific angle on the light sensor element 32 through the light-transmitting regions 331A, 332A, 333A, and 334A. In addition, the light-transmitting regions 331A, 332A, 333A, and 334A of the light adjustment layers 331, 332, 333, and 334 function as small aperture structures, thereby expanding the imaging range of the light sensor element 32 and effectively improving the imaging depth of field on the light sensor element 32. Furthermore, the light adjustment layers 331, 332, 333, and 334 of this embodiment are formed on the light sensor element 32 by, for example, a semiconductor process, thereby further reducing the overall volume and manufacturing cost. Furthermore, the image sensor module 3 may block stray light in the lateral direction by the non-light-transmitting layer 34, thereby reducing the stray light, thereby effectively improving the imaging depth of field on the light sensor element 32. Furthermore, in the image sensor module 3, the light sensor elements 32 and the light guiding member 33 may be formed using different semiconductor processes due to the underlayer 36. Furthermore, the lens elements 371 of the lens layer 37 focus the incident light, thereby further increasing the amount of incident light and improving the imaging depth of field on the light sensor elements 32 without significantly increasing the overall volume and manufacturing cost.

[0054] FIG. 7A is a cross-sectional view of the image sensor module 4 according to the fourth embodiment of the present invention taken along the line BB in FIG. 7B. FIG. 7B is a plan view of the image sensor module 4 according to the fourth embodiment of the present invention. As shown in FIG. 7A and FIG. 7B, the image sensor module 4 according to the fourth embodiment is different from the image sensor module 3 according to the third embodiment in that the lens elements 471 of the lens layer 47 are arranged in a staggered manner with respect to each other, and each light sensor element 42 corresponds to at least two lens elements 471. The staggered arrangement means that, for example, the lens elements 471 are divided into two rows, one above the other, and the central axes of the lens elements 471 in the two rows are arranged so as to be shifted from each other. In this embodiment, a case where one light sensor element 42 corresponds to two lens elements 471 will be described as an example, but is not limited thereto. Some lens elements may not correspond to light sensor elements.

[0055] In this way, by concentrating the incident light rays through multiple lens elements 471, the amount of incident light can be further increased and the imaging depth of field on the optical sensor element 42 can be improved without significantly increasing the overall volume and manufacturing costs.

[0056] 8 is a schematic plan view showing a modified embodiment of the image sensor module 4A according to the present invention. As shown in FIG. 8, one optical sensor element 42 may correspond to three lens elements 471A. Of course, one optical sensor element 42 may correspond to four or more lens elements according to different designs. Note that some lens elements may not correspond to an optical sensor element.

[0057] As described above, the image sensor module according to the present invention can block stray light by the light guide member functioning as a collimator, and can image only light at a specific angle on the light sensor element through the light transmission region. In addition, the light transmission region of the light adjustment layer functions as a small aperture structure to limit (reduce) the angle of light incident on the light sensor element, which has the same effect as limiting (reducing) the angle of light incident on the light sensor element by reducing a normal lens aperture, and therefore can expand the imaging range that can be received vertically by the light sensor element, and can effectively improve the imaging depth of field on the light sensor element. In addition, in order to form a light guide member on a substrate having light sensor elements and accurately align each light sensor element with the corresponding light guide member (i.e., aperture), the light adjustment layer according to the present invention can be formed on the light sensor element by, for example, a semiconductor process, thereby further reducing the overall volume and manufacturing cost. In addition, the image sensor module according to the present invention can further improve the imaging depth of field on the light sensor element by blocking stray light in the lateral direction with the non-light transmission layer. Similarly, in the image sensor module according to the present invention, the light sensor element and the light guide member may be formed using different semiconductor processes due to the underlayer. Furthermore, the image sensor module according to the present invention can further increase the amount of incident light and improve the imaging depth of field on the light sensor element by concentrating incident light rays using the lens element of the lens layer without significantly increasing the overall volume and manufacturing cost.

[0058] The above describes in detail the preferred embodiments of the present invention with reference to the accompanying drawings. However, it goes without saying that the present invention is not limited to such examples, and does not limit the scope of the present invention. The entire scope of the present invention is based on the following claims. The spirit and similar modifications that conform to the scope of the claims of the present invention should be included in the scope of the present invention. Those skilled in the art can easily think of modifications and amendments within the technical scope of the present invention, and such modifications and amendments are also included in the scope of the following claims. [Explanation of symbols]

[0059] 1, 2, 2A, 2B, 3, 4 イメージセンサモジュール 11 base plate 12, 22, 32, 42 Mitsuko Hikari 13, 23, 23a, 33 Light guide components 131, 231 1st Light Adjustment Layer 131A, 231A 1st light transmission area 131B, 132B Light-shielding area 132, 232 2nd Light Adjustment Layer 132A, 232A Second light transmission area 14 Translucent Materials 15, 25 protection layer 233 3rd Light Adjustment Layer 233A The third light transmission area 234 4th Light Adjustment Layer 234A 4th light transmission area 235 Side 24, 34 opaque layer 26, 36 Lower strata 321 Interval 331, 332, 333, 334 Light Adjustment Layer 331A, 332A, 333A, 334A Translucent area 37, 47 レンズlayer 371, 471, 471A Rino Motoko 9 イメージセンサ device 91 box 92 light source モジュール 93 circuit board A1 Long Axis AP1~AP4 opening D yen arc diameter D1 1st interval D2 2nd interval D3 3rd interval H high L Light incident direction LA1, LA2 light adjustment structure

Claims

1. A substrate; a photosensor element disposed on the substrate; a first light adjustment layer having a first light transmitting region and a second light adjustment layer disposed on the first light adjustment layer and having a second light transmitting region; and a light guide member disposed on the light sensor element; The first light-transmitting area and the second light-transmitting area each correspond to the light sensor element.

2. a lens layer disposed on the light guide member and having lens elements corresponding to the light sensor elements or the first light transmitting area and the second light transmitting area; The image sensor module according to claim 1 .

3. The image sensor module of claim 2 , wherein the lens element corresponds to the light sensor element.

4. 3. The image sensor module of claim 2, wherein the lens layer has a plurality of the lens elements, the plurality of the lens elements being staggered with respect to each other, and the photosensor element corresponding to at least two of the lens elements.

5. 2. The image sensor module of claim 1, wherein the first light-transmitting region has a first opening and the second light-transmitting region has a second opening, the second opening being greater than or equal to the first opening.

6. The image sensor module according to claim 1 , wherein the first light adjustment layer and the second light adjustment layer are disposed at a first interval.

7. 2. The image sensor module of claim 1, wherein the light-guiding member further comprises a third light-adjusting layer disposed on the second light-adjusting layer, the third light-adjusting layer having a third light-transmitting region corresponding to the light sensor element.

8. 8. The image sensor module of claim 7, wherein the first light-transmitting region has a first opening, the second light-transmitting region has a second opening, and the third light-transmitting region has a third opening, the second opening being larger than or equal to the first opening, and the third opening being larger than or equal to the second opening.

9. The image sensor module of claim 7 , wherein the first light adjustment layer and the second light adjustment layer are arranged at a first interval, and the second light adjustment layer and the third light adjustment layer are arranged at a second interval.

10. A substrate; a photosensor element disposed on the substrate; a light guide member including a light adjustment structure having a plurality of light transmitting regions corresponding to the light sensor element and disposed above the light sensor element; The opening of each of the plurality of light-transmitting regions gradually narrows along a light incidence direction.

11. The image sensor module according to claim 10 , further comprising a lens layer disposed on the light guide member and having a plurality of lens elements respectively corresponding to the light sensor elements.

12. The image sensor module of claim 11 , wherein each of the plurality of lens elements corresponds to a light sensor element.

13. 12. The image sensor module of claim 11, wherein the lens elements are staggered relative to one another, and the photosensor elements correspond to at least two of the lens elements.

14. The image sensor module according to claim 10 , wherein the light adjusting structure includes a plurality of light adjusting layers arranged along the light incident direction, and the plurality of light-transmitting regions are disposed in the plurality of light adjusting layers.

15. The image sensor module according to claim 14 , wherein adjacent two of the plurality of light adjustment layers are disposed with a gap therebetween.

16. The image sensor module according to claim 15 , wherein the intervals are in a preset proportional relationship with each other.

17. A substrate; a photosensor element disposed on the substrate; an optical adjustment layer having a plurality of light-transmitting regions corresponding to the optical sensor elements and light-shielding regions arranged around the plurality of light-transmitting regions; and a light-guiding member arranged above the optical sensor elements.

18. The image sensor module of claim 17 , further comprising a lens layer disposed on the light guide member and having a plurality of lens elements respectively corresponding to the light sensor elements.

19. The image sensor module of claim 18 , wherein each of the plurality of lens elements corresponds to a light sensor element.

20. 20. The image sensor module of claim 18, wherein the lens elements are staggered relative to one another, and the photosensor elements correspond to at least two of the lens elements.

Images