Photodetector and electronic apparatus

Abstract

To provide a photodetector capable of suppressing deterioration in quality.SOLUTION: A photodetector according to an embodiment of the present disclosure includes a first region having a plurality of first pixels each including a first photoelectric conversion element provided in a semiconductor layer and a first trench provided between the plurality of first pixels adjacent to each other in the semiconductor layer, and a second region having a second trench provided in the semiconductor layer in a first direction and a second direction intersecting the first direction and provided around the first region, and a pattern density of the second trenches is greater than a pattern density of the first trenches.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to light detection devices and electronic devices. [Background technology]

[0002] A device has been proposed that has an effective pixel area and a dummy pixel area that is provided so as to surround the effective pixel area on all four sides, and in which an FTI (Full Trench Isolation) structure is arranged (Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2022-106021 A Summary of the Invention [Problem to be solved by the invention]

[0004] In light detecting devices, there is a demand to suppress deterioration in quality.

[0005] It is desirable to provide a photodetection device capable of suppressing deterioration in quality. [Means for solving the problem]

[0006] A photodetector according to an embodiment of the present disclosure includes a first region having a plurality of first pixels each including a first photoelectric conversion element provided in a semiconductor layer and a first trench provided between adjacent first pixels in the semiconductor layer, and a second region having a second trench provided in the semiconductor layer in a first direction and a second direction intersecting the first direction and provided around the first region. The pattern density of the second trenches is greater than the pattern density of the first trenches. An electronic device according to an embodiment of the present disclosure includes an optical system and a photodetector that receives light transmitted through the optical system. The photodetector includes a first region having a plurality of first pixels each including a first photoelectric conversion element provided in a semiconductor layer and a first trench provided between adjacent first pixels in the semiconductor layer, and a second region having a second trench provided in the semiconductor layer in a first direction and a second direction intersecting the first direction, the second region being provided around the first region. The pattern density of the second trench is greater than the pattern density of the first trench. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a block diagram showing an example of a schematic configuration of an imaging device which is an example of a light detection device according to an embodiment of the present disclosure. [Diagram 2] FIG. 2 is a diagram for explaining an example of a planar configuration of an imaging device according to an embodiment of the present disclosure. [Diagram 3] FIG. 3 is a diagram for explaining an example of a planar configuration of an imaging device according to an embodiment of the present disclosure. [Figure 4] FIG. 4 is a diagram illustrating an example of a circuit configuration of an effective pixel of an imaging device according to an embodiment of the present disclosure. [Figure 5A] FIG. 5A is a diagram illustrating an example of a circuit configuration of a cell of an imaging device according to an embodiment of the present disclosure. [Figure 5B] FIG. 5B is a diagram illustrating an example of a circuit configuration of a cell of the imaging device according to the embodiment of the present disclosure. [Figure 6] FIG. 6 is a diagram for explaining an example of a cross-sectional configuration of an imaging device according to an embodiment of the present disclosure. [Figure 7] FIG. 7 is a diagram for explaining an example of a planar configuration of an imaging device according to an embodiment of the present disclosure. [Figure 8] FIG. 8 is a diagram for explaining a configuration example of a pixel unit of an imaging device according to Modification 1 of the present disclosure. [Figure 9] FIG. 9 is a diagram for explaining a configuration example of a pixel unit of an imaging device according to Modification 2 of the present disclosure. [Figure 10]FIG. 10 is a diagram for explaining another configuration example of the pixel unit of the imaging device according to the second modification of the present disclosure. In FIG. [Figure 11] FIG. 11 is a diagram for explaining another example configuration of a pixel unit of an imaging device according to Modification 2 of the present disclosure. In FIG. [Figure 12] FIG. 12 is a diagram for explaining a configuration example of a pixel unit of an imaging device according to the third modification of the present disclosure. [Figure 13] FIG. 13 is a diagram for explaining a configuration example of a pixel unit of an imaging device according to the fourth modification of the present disclosure. In FIG. [Figure 14] FIG. 14 is a diagram for explaining a configuration example of an imaging device according to the fifth modification of the present disclosure. [Figure 15] FIG. 15 is a block diagram illustrating an example of the configuration of an electronic device having an imaging device. [Figure 16] FIG. 16 is a block diagram showing an example of a schematic configuration of a vehicle control system. [Figure 17] FIG. 17 is an explanatory diagram showing an example of the installation positions of the vehicle outside information detection unit and the imaging unit. [Figure 18] FIG. 18 is a diagram showing an example of a schematic configuration of an endoscopic surgery system. [Figure 19] FIG. 19 is a block diagram showing an example of a functional configuration of the camera head and the CCU. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be made in the following order. 1. Embodiment 2. Variations 3. Application Examples 4. Application Examples

[0009] <1. Preferred embodiment> 1 is a block diagram showing an example of a schematic configuration of an imaging device which is an example of a photodetection device according to an embodiment of the present disclosure. The photodetection device is a device capable of detecting incident light. The imaging device 1 which is a photodetection device has a plurality of pixels P each having a photoelectric conversion unit (photoelectric conversion element) and is configured to perform photoelectric conversion of the incident light to generate a signal.

[0010] The imaging device 1 can generate a signal by receiving light transmitted through an optical system (not shown) including an optical lens. The imaging device 1 is configured, for example, using a semiconductor substrate (e.g., a silicon substrate) on which a plurality of pixels P are provided. The photoelectric conversion unit of each pixel P of the imaging device 1 is, for example, a photodiode (PD) and configured to be capable of photoelectrically converting light.

[0011] 1, the imaging device 1 has an area (pixel section 100) in which a plurality of pixels P are two-dimensionally arranged in a matrix. The pixel section 100 of the imaging device 1 can also be considered as a pixel array in which a plurality of pixels P are arranged. The photoelectric conversion section of each pixel P can also be considered as a photoelectric conversion area. In the pixel section 100, effective pixels, light-shielding pixels, etc. are arranged, as described later.

[0012] The imaging device 1 captures incident light (image light) from a subject to be measured via an optical system including an optical lens. The imaging device 1 captures an image of the subject formed by the optical lens. The imaging device 1 can generate pixel signals by photoelectrically converting the received light (e.g., visible light, infrared light, etc.). The imaging device 1, which is a light detection device, is a device that can receive incident light and generate a signal, and can also be called a light receiving device.

[0013] The imaging device 1 (photodetection device) may be configured as an image sensor, for example. The imaging device 1 may be, for example, a complementary metal oxide semiconductor (CMOS) image sensor. The imaging device 1 may have a structure (layered structure) formed by stacking a plurality of semiconductor layers. The imaging device 1 may be used in various electronic devices such as digital still cameras, video cameras, and mobile phones.

[0014] 1, the imaging device 1 includes a pixel unit 100, a pixel control unit 111, a signal processing unit 112, a control unit 113, and a processing unit 114. The imaging device 1 is also provided with, for example, a plurality of control lines Lread and a plurality of signal lines VSL. The control line Lread is a signal line capable of transmitting a signal for controlling the pixel P, and is connected to the pixel control unit 111 and the pixel P of the pixel unit 100.

[0015] 1, in the pixel section 100, a plurality of control lines Lread are wired for each pixel row composed of a plurality of pixels P arranged in the horizontal direction (row direction). The control lines Lread are configured to transmit control signals for reading out signals from the pixels P. The control lines Lread can also be considered as drive lines (pixel drive lines) that transmit signals for driving the pixels P.

[0016] The signal line VSL is a signal line capable of transmitting a signal from a pixel P, and is connected to the pixel P of the pixel unit 100 and the signal processing unit 112. In the pixel unit 100, for example, one or more signal lines VSL are wired for each pixel column composed of a plurality of pixels P arranged in the vertical direction (column direction). The signal line VSL is configured to be able to transmit a signal output from the pixel P. In the imaging device 1, multiple signal lines VSL may be provided for one pixel column. The imaging device 1 may have multiple signal lines VSL for each pixel column.

[0017] The pixel control unit 111 is configured to be able to control each pixel P of the pixel unit 100. The pixel control unit 111 is a control circuit and is configured by a plurality of circuits including, for example, a buffer, a shift register, an address decoder, etc. The pixel control unit 111 generates a signal for controlling the pixel P and outputs the signal to each pixel P of the pixel unit 100 via a control line Lread. The pixel control unit 111 is controlled by the control unit 113 and controls the pixel P of the pixel unit 100.

[0018] The pixel control unit 111 generates signals for controlling the pixels P, such as a signal for controlling the transfer transistor of the pixel P, a signal for controlling the selection transistor, and a signal for controlling the reset transistor, and supplies the signals to each pixel P via a control line Lread. The pixel control unit 111 can control reading out pixel signals from each pixel P. The pixel control unit 111 can also be called a pixel driving unit configured to be able to drive each pixel P. The pixel control unit 111 and the control unit 113 can also be called a pixel control unit together.

[0019] The signal processing unit 112 is configured to be able to execute signal processing of the input pixel signal. The signal processing unit 112 is a signal processing circuit, and has, for example, a load circuit, an AD (Analog Digital) conversion circuit, a horizontal selection switch, etc. As an example, the load circuit is configured by a current source capable of supplying a current to the amplification transistor of the pixel P. The load circuit, together with the amplification transistor of the pixel P, configures, for example, a source follower circuit.

[0020] The signal processing unit 112 may have an amplifier circuit configured to amplify a signal read from the pixel P via the signal line VSL. The load circuit, the amplifier circuit, the AD conversion circuit, etc. are provided for each of the multiple signal lines VSL, for example. A load circuit, an amplifier circuit, an AD conversion circuit, etc. may be provided for each pixel column of the pixel unit 100.

[0021] A signal output from each pixel P selected and scanned by the pixel control unit 111 is input to a signal processing unit 112 via a signal line VSL. The signal processing unit 112 can perform signal processing such as AD conversion of the signal of the pixel P and CDS (Correlated Double Sampling). The signal of each pixel P transmitted through each signal line VSL is subjected to signal processing by the signal processing unit 112 and output to a processing unit 114.

[0022] The processing unit 114 is configured to be able to perform signal processing on the input signal. The processing unit 114 is a processing circuit, and is configured, for example, by a circuit that performs various types of signal processing on pixel signals. The processing unit 114 may include a processor and a memory. The processing unit 114 performs signal processing on pixel signals input from the signal processing unit 112, and outputs the processed pixel signals. The processing unit 114 can perform various types of signal processing, for example, noise reduction processing, tone correction processing, etc.

[0023] The control unit 113 is configured to be able to control each unit of the imaging device 1. The control unit 113 receives an externally provided clock, data instructing an operation mode, and the like, and can also output data such as internal information of the imaging device 1. The control unit 113 is a control circuit, and has, for example, a timing generator configured to be able to generate various timing signals. The control unit 113 performs drive control of the pixel control unit 111, the signal processing unit 112, and the like, based on various timing signals (pulse signals, clock signals, and the like) generated by the timing generator.

[0024] The pixel section 100, the pixel control section 111, the signal processing section 112, and the like described above may be provided on one substrate. The pixel control section 111, the signal processing section 112, the control section 113, the processing section 114, and the like may be provided on one semiconductor substrate, or may be provided separately on multiple semiconductor substrates. The imaging device 1 may have a layered structure formed by stacking multiple substrates. Note that some or all of the signal processing section 112, the control section 113, and the processing section 114 may be integrally configured.

[0025] 2 and 3 are diagrams for explaining an example of a planar configuration of an imaging device according to an embodiment. Fig. 3 shows an area surrounded by a dashed line L1 in a pixel section 100 of the imaging device 1 shown in Fig. 2. The imaging device 1 has a pixel section 100 and a terminal section 120. In the example shown in Fig. 2, a plurality of terminal sections 120 are provided around the pixel section 100.

[0026] As shown in Fig. 2, the incident direction of light from the subject is the Z-axis direction, the left-right direction on the paper perpendicular to the Z-axis direction is the X-axis direction, and the up-down direction on the paper perpendicular to the Z-axis and X-axis directions is the Y-axis direction. In the following figures, directions may be indicated based on the direction of the arrow in Fig. 2. Although not shown, the pixel control unit 111, signal processing unit 112, control unit 113, processing unit 114, etc. described above may be provided in the peripheral region of the pixel unit 100.

[0027] The pixels P provided in the pixel section 100 include an effective pixel P1 and a light-shielding pixel P2. The pixel section 100 also includes a cell P3. The effective pixel P1 is a pixel that receives light from a measurement target (subject). The light-shielding pixel P2 and the cell P3 have, for example, a light-shielding member (light-shielding film) and are in a light-shielding state. The cell P3 is provided as a dummy pattern and can also be called a dummy pixel.

[0028] The terminal section 120 exchanges signals with the outside. The terminal section 120 includes terminals (pads) used for transmitting signals with the outside. The terminal section 120 is provided, for example, in an area outside the pixel section 100. As an example, the terminal section 120 includes a plurality of pads (PADs) and is arranged in a peripheral area of ​​the pixel section 100, as shown typically in FIG. 2.

[0029] The terminal unit 120 includes, for example, an input / output pad for inputting and outputting a signal, an input pad for inputting a signal from outside the imaging device 1, and an output pad for outputting a signal to outside the imaging device 1. The terminal unit 120 also includes a power supply pad and a GND pad, and can supply a power supply voltage and a GND voltage (ground voltage) input from outside to each circuit of the imaging device 1.

[0030] The pixel section 100 of the imaging device 1 has an area where a plurality of effective pixels P1 are provided (referred to as an effective pixel area 101) and an area where a plurality of light-shielding pixels P2 are provided (referred to as a light-shielding pixel area 102). The pixel section 100 also has an area where a plurality of cells P3 are provided (referred to as a dummy pattern area 103).

[0031] A plurality of effective pixels P1 are arranged two-dimensionally in the effective pixel region 101. As an example, the plurality of effective pixels P1 are arranged to be aligned in the horizontal direction (X-axis direction) and the vertical direction (Y-axis direction) as shown in Fig. 3. The effective pixel P1 may have, for example, a filter configured to selectively transmit light of a specific wavelength range among incident light.

[0032] The effective pixels P1 in the effective pixel region 101 include, for example, pixels (R pixels) provided with filters that transmit light in the red (R) wavelength range, pixels (G pixels) provided with filters that transmit light in the green (G) wavelength range, and pixels (B pixels) provided with filters that transmit light in the blue (B) wavelength range. In the pixel section 100, a plurality of R pixels, a plurality of G pixels, and a plurality of B pixels are repeatedly arranged.

[0033] The R pixels, G pixels, and B pixels are arranged, for example, according to a Bayer array. The R pixels, G pixels, and B pixels can generate R component pixel signals, G component pixel signals, and B component pixel signals, respectively. The imaging device 1 can obtain RGB pixel signals. The number and arrangement of the effective pixels P1 in the effective pixel area 101 can be set arbitrarily.

[0034] The filters provided in the effective pixels P1 are not limited to primary color (RGB) filters, and may be complementary color filters. A filter corresponding to W (white), i.e., a filter that transmits light of all wavelengths of incident light, may be provided. The filter may be a filter that transmits infrared light. Furthermore, filters may not be provided in some or all of the effective pixels P1, as necessary.

[0035] Light from a subject to be measured is incident on each effective pixel P1 of the effective pixel area 101. The effective pixel P1 can receive the incident light, perform photoelectric conversion, and generate a pixel signal. The imaging device 1 can generate image data representing the subject image using the pixel signal obtained by photoelectric conversion in each effective pixel P1.

[0036] In the effective pixel region 101, trenches 71 are provided as in the example shown in Fig. 3. The trenches 71 are provided between adjacent effective pixels P1 to separate the effective pixels P1. The trenches 71 have, for example, an FTI (Full Trench Isolation) structure. In the example shown in Fig. 3, the trenches 71 are formed in a lattice shape in a plan view and are disposed at the boundaries between adjacent effective pixels P1. It can be said that the effective pixels P1 have a structure partitioned by the trenches 71.

[0037] The light-shielded pixel region 102 is provided around the effective pixel region 101. The light-shielded pixel region 102 is provided so as to surround the effective pixel region 101, for example, as shown in Figures 2 and 3. In the light-shielded pixel region 102, as an example, a plurality of light-shielded pixels P2 are two-dimensionally arranged in the X-axis direction and the Y-axis direction so as to surround the effective pixel region 101.

[0038] The light-shielded pixel P2 is a pixel shielded by a light-shielding member, and can output a pixel signal indicating a reference level. The light-shielded pixel P2 generates and outputs, for example, a signal indicating a reference level for the pixel signal of the effective pixel P1 as a pixel signal. The pixel signal generated by the light-shielded pixel P2 can be said to be a signal indicating a black level (or an offset level). The light-shielded pixel P2 is an OPB (Optical Black) pixel, and the light-shielded pixel region 102 can also be said to be an OPB pixel region.

[0039] The processing unit 114 (see FIG. 1) of the imaging device 1 is configured to be able to correct pixel signals. The processing unit 114 is configured to correct pixel signals generated by the effective pixel P1 using pixel signals generated by the light-shielded pixel P2. The processing unit 114 can generate pixel signals in which noise components (e.g., dark current components) have been reduced, for example, by performing subtraction processing between the pixel signals of the effective pixel P1 and the pixel signals of the light-shielded pixel P2. Note that this correction processing may be performed by the signal processing unit 112.

[0040] 3, a trench 72 is provided in the light-shielded pixel region 102. The trench 72 is provided between adjacent light-shielded pixels P2 to separate the light-shielded pixels P2. The trench 72 has an FTI structure similar to the trench 71, for example. In the example shown in FIG. 3, the trench 72 and the trench 71 are formed continuously and integrally.

[0041] 3, the trenches 72 are provided in a lattice pattern on the XY plane. The trenches 72 are provided in a lattice pattern around the effective pixel region 101, and are disposed at the boundaries between adjacent light-shielded pixels P2. It can be said that the light-shielded pixels P2 have a structure partitioned by the trenches 72. The number and arrangement of the light-shielded pixels P2 in the light-shielded pixel region 102 can be set arbitrarily.

[0042] The dummy pattern region 103 is provided around the light-shielded pixel region 102. The dummy pattern region 103 is provided so as to surround the light-shielded pixel region 102, for example, as shown in Figures 2 and 3. In the dummy pattern region 103, as an example, a plurality of cells P3 are two-dimensionally arranged so as to surround the light-shielded pixel region 102.

[0043] The cells P3 are areas that are shielded by a light shielding member, and may be called dummy pixels or dummy patterns. As an example, the cells P3 are arranged in the X-axis direction and the Y-axis direction as shown in FIG. 3. The number and arrangement of the cells P3 in the dummy pattern area 103 are not limited to the example shown in the figure, and may be changed as appropriate.

[0044] 3, a trench 73 is provided in the dummy pattern region 103. The trench 73 is provided between adjacent cells P3 to separate the cells P3. The trench 73 has an FTI structure, similar to the trenches 71 and 72. In the example shown in FIG. 3, the trenches 73 and 72 are formed continuously and integrally.

[0045] 3, the trenches 73 are provided in a lattice pattern on the XY plane. The trenches 73 are provided in a lattice pattern around the light-shielded pixel region 102 and are disposed at the boundaries between adjacent cells P3. The cells P3 are regions defined by the trenches 73, and can be said to have a structure partitioned by the trenches 73.

[0046] The imaging device 1 may be configured so that the pattern density of the trenches in each region is different. For example, the imaging device 1 is configured so that the pattern density of the trenches 73 in the dummy pattern region 103 is different from the pattern density of the trenches 71 in the effective pixel region 101. As an example, as shown in FIG. 3, the pattern density of the trenches 73 in the dummy pattern region 103 is greater than the pattern density of the trenches 71 in the effective pixel region 101. The arrangement period (pitch) of the trenches 73 is shorter (narrower) than the arrangement period of the trenches 71.

[0047] Furthermore, the imaging device 1 may be configured such that the pattern density of the trenches 73 in the dummy pattern region 103 is different from the pattern density of the trenches 72 in the light-shielded pixel region 102. For example, as shown in the example of Fig. 3, the pattern density of the trenches 73 in the dummy pattern region 103 is greater than the pattern density of the trenches 72 in the light-shielded pixel region 102. Note that in the imaging device 1, the trenches 71 and 72 may be arranged such that the pattern density and pitch of the trenches 71 and the pattern density and pitch of the trenches 72 are the same.

[0048] 4 is a diagram showing an example of a circuit configuration of an effective pixel of an imaging device according to an embodiment. Effective pixel P1 has a photoelectric conversion unit 12 (photoelectric conversion element) and a readout circuit 20. The photoelectric conversion unit 12 is configured to receive light and generate a signal. The readout circuit 20 is configured to be able to output a signal based on charges photoelectrically converted. The readout circuit 20 can read out a pixel signal based on the charges photoelectrically converted by the photoelectric conversion unit 12.

[0049] The photoelectric conversion unit 12 is a light receiving unit (light receiving element) and is configured to be able to generate electric charges by photoelectric conversion. In the example shown in Fig. 4, the photoelectric conversion unit 12 is a photodiode (PD) and converts incident light into electric charges. The photoelectric conversion unit 12 can perform photoelectric conversion to generate electric charges according to the amount of received light.

[0050] The read circuit 20 includes, for example, a transistor TRG1, a floating diffusion FD, a transistor AMP1, a transistor SEL1, and a transistor RST1. The transistors TRG1, AMP1, SEL1, and RST1 are each a MOS transistor (MOSFET) having a gate, a source, and a drain terminal.

[0051] 4, the transistors TRG1, AMP1, SEL1, and RST1 are each configured as an NMOS transistor. The transistor of the effective pixel P1 may be configured as a PMOS transistor.

[0052] The transistor TRG1 is a transfer transistor and is configured to be able to transfer charges photoelectrically converted by the photoelectric conversion unit 12 to the floating diffusion FD. The transistor TRG1 is controlled by a signal VTRG to electrically connect or disconnect the photoelectric conversion unit 12 and the floating diffusion FD. The transistor TRG1 can transfer charges photoelectrically converted and accumulated by the photoelectric conversion unit 12 to the floating diffusion FD.

[0053] The floating diffusion FD is an accumulation unit and is configured to be able to accumulate the transferred electric charge. The floating diffusion FD can accumulate the electric charge photoelectrically converted by the photoelectric conversion unit 12. The floating diffusion FD can also be said to be a retention unit capable of retaining the transferred electric charge. The floating diffusion FD accumulates the transferred electric charge and converts it into a voltage according to the capacity of the floating diffusion FD.

[0054] The transistor AMP1 is configured to generate and output a signal based on the charge accumulated in the floating diffusion FD. The transistor AMP1 is an amplifying transistor, and can generate and output a signal based on the charge converted by the photoelectric conversion unit 12.

[0055] The gate of the transistor AMP1 is electrically connected to the floating diffusion FD, and the voltage converted by the floating diffusion FD is input to the gate of the transistor AMP1. In the example shown in Fig. 4, the drain of the transistor AMP1 is connected to a power supply line to which a power supply voltage VDD is supplied.

[0056] The source of the transistor AMP1 is connected to the signal line VSL via the transistor SEL1. The transistor AMP1 is configured to generate a signal based on the charge stored in the floating diffusion FD, i.e., a signal based on the voltage of the floating diffusion FD, and output the signal to the signal line VSL.

[0057] The transistor SEL1 is configured to be capable of controlling the output of a pixel signal. The transistor SEL1 is electrically connected in series with the transistor AMP1, for example, as shown in the example of FIG. 4. The transistor SEL1 is configured to be controlled by a signal VSEL and to be capable of outputting a signal from the transistor AMP1 to a signal line VSL. The transistor SEL1 is a selection transistor and can control the output timing of the pixel signal.

[0058] The transistor SEL1 is configured to be capable of outputting a signal based on the charge converted by the photoelectric conversion unit 12. The transistor SEL1 can output a pixel signal of the effective pixel P1 to a signal line VSL. The transistor SEL1 may be electrically connected in series between a power supply line to which a power supply voltage VDD is applied and the transistor AMP1.

[0059] The transistor RST1 is configured to be able to reset the voltage of the floating diffusion FD. In the example shown in Fig. 4, the transistor RST1 is electrically connected to a power supply line to which a power supply voltage VDD is applied, and is configured to reset the charge of the effective pixel P1. The transistor RST1 is a reset transistor.

[0060] The transistor RST1 is controlled by a signal VRST, and can reset the charge accumulated in the floating diffusion FD and reset the voltage of the floating diffusion FD. In the example shown in Fig. 4, the transistor RST1 electrically connects the power supply line and the floating diffusion FD and can discharge the charge accumulated in the floating diffusion FD. The transistor RST1 can discharge the charge accumulated in the photoelectric conversion unit 12 via the transistor TRG1.

[0061] The pixel control unit 111 (see FIG. 1) of the imaging device 1 supplies control signals to the gates of transistors TRG1, SEL1, RST1, etc. of each pixel P via the control line Lread described above, turning the transistors on (conducting) or off (non-conducting).

[0062] The multiple control lines Lread for each pixel row of the imaging device 1 include, for example, a wiring for transmitting a signal VTRG that controls the transistor TRG1, a wiring for transmitting a signal VSEL that controls the transistor SEL1, a wiring for transmitting a signal VRST that controls the transistor RST1, etc. The transistors TRG1, SEL1, RST1, etc. are on / off controlled by the pixel control unit 111.

[0063] The light-shielded pixel P2 has, for example, the same circuit configuration as the above-mentioned effective pixel P1. The pixel control unit 111 controls the readout circuits 20 of each effective pixel P1 and each light-shielded pixel P2 to output pixel signals from each effective pixel P1 and each light-shielded pixel P2 to a signal line VSL. The pixel control unit 111 can control the reading out of the pixel signals of each effective pixel P1 and each light-shielded pixel P2 to the signal line VSL.

[0064] 5A is a diagram showing an example of a circuit configuration of a cell of an imaging device according to an embodiment. The cell P3 has, for example, the same circuit elements as the above-mentioned effective pixel P1 (or the light-shielded pixel P2). As an example, as shown in FIG. 5A, the cell P3 has a photoelectric conversion unit 12, a transistor TRG2, a transistor AMP2, a transistor SEL2, and a transistor RST2.

[0065] The transistor TRG2 of the cell P3 is a transfer transistor and corresponds to the transistor TRG1 of the effective pixel P1. The gate of the transistor TRG2 is electrically connected to a wiring that receives a reference voltage (e.g., a ground voltage) or a wiring that receives a power supply voltage. In the example shown in FIG. 5A, the gate of the transistor TRG2 is electrically connected to a wiring that receives a voltage VSS (e.g., 0 V).

[0066] The transistor AMP2 of the cell P3 is an amplification transistor and corresponds to the transistor AMP1 of the effective pixel P1. The transistor SEL2 of the cell P3 is a selection transistor and corresponds to the transistor SEL1 of the effective pixel P1. The gate of the transistor SEL2 is electrically connected to a wiring to which a reference voltage is applied or a wiring to which a power supply voltage is applied.

[0067] In the example shown in Fig. 5A, the gate of the transistor SEL2 is electrically connected to a wiring to which a voltage VSS is applied. Note that, as shown in Fig. 5A, one of the source and the drain of the transistor SEL2 may be in an open state without being connected to a signal line.

[0068] The transistor RST2 of the cell P3 is a reset transistor and corresponds to the transistor RST1 of the effective pixel P1. The gate of the transistor RST2 is electrically connected to a wiring to which a reference voltage is applied or a wiring to which a power supply voltage is applied. In the example shown in FIG. 5A, the gate of the transistor RST2 is electrically connected to a wiring to which a voltage VSS is applied.

[0069] 5B is a diagram showing another example of the circuit configuration of the cell of the imaging device according to the embodiment. The cell P3 may have the circuit configuration shown in FIG. 5B. In the example shown in FIG. 5B, the gate of the transistor AMP2 and the gate of the transistor SEL2 are each electrically connected to a wiring to which a power supply voltage VDD is applied.

[0070] Fig. 6 is a diagram for explaining an example of a cross-sectional configuration of an imaging device according to an embodiment. Fig. 7 is a diagram for explaining an example of a planar configuration of an imaging device according to an embodiment. As shown in Fig. 6, the imaging device 1 has, for example, a lens 30, a semiconductor layer 10, and a multilayer wiring layer 60. The imaging device 1 has a configuration in which the lens 30, the semiconductor layer 10, and the multilayer wiring layer 60 are stacked in the Z-axis direction. From the light incident side, a layer on which the lens 30 is provided, the semiconductor layer 10, and the multilayer wiring layer 60 are provided.

[0071] 6, the semiconductor layer 10 has a surface 11S1 and a surface 11S2 that face each other. The surface 11S2 is the surface opposite to the surface 11S1. The surface 11S1 of the semiconductor layer 10 is a light receiving surface (light incident surface). The surface 11S2 of the semiconductor layer 10 is an element formation surface on which elements such as transistors are formed. A gate electrode, a gate insulating film (e.g., a gate oxide film), etc. are provided on the surface 11S2 of the semiconductor layer 10.

[0072] The semiconductor layer 10 is composed of a semiconductor substrate, for example, a Si (silicon) substrate. The semiconductor layer 10 may be an SOI (silicon on insulator) substrate, a SiGe (silicon germanium) substrate, a SiC (silicon carbide) substrate, or the like. The semiconductor layer 10 may be composed of a III-V group compound semiconductor material, or may be formed using other semiconductor materials.

[0073] 6, a layer including a lens 30 is provided on a surface 11S1 side of the semiconductor layer 10. A multilayer wiring layer 60 is provided on a surface 11S2 side of the semiconductor layer 10. The lens 30 is provided on the side where light from the optical system is incident, and the multilayer wiring layer 60 is provided on the side opposite to the side where the light is incident. The imaging device 1 is a so-called backside illumination type imaging device.

[0074] In the semiconductor layer 10, a plurality of photoelectric conversion units 12 (photoelectric conversion elements) are provided along a surface 11S1 and a surface 11S2 of the semiconductor layer 10. For example, a plurality of photoelectric conversion units 12 are embedded and formed in the semiconductor layer 10. The photoelectric conversion units 12 are provided between the surface 11S1 and the surface 11S2 of the semiconductor layer 10.

[0075] The lens 30 (lens unit) is a lens that collects light, and is an optical member also called an on-chip lens. The lens 30 is provided above the photoelectric conversion unit 12 for each effective pixel P1 or for each set of multiple effective pixels P1. Light from a subject to be measured is incident on the lens 30 via an optical system such as an imaging lens. The lens 30 guides the incident light to the photoelectric conversion unit 12 side of the effective pixel P1.

[0076] The photoelectric conversion unit 12 of the effective pixel P1 photoelectrically converts light incident through the lens 30. The imaging device 1 may have a filter such as an RGB color filter. The filter is provided, for example, between the lens 30 and the photoelectric conversion unit 12. The photoelectric conversion unit 12 may also be referred to as a photoelectric conversion layer.

[0077] The multi-layer wiring layer 60 is provided by being laminated on the semiconductor layer 10. The multi-layer wiring layer 60 includes, for example, a conductor film and an insulating film, and has a plurality of wirings and vias (VIA), etc. The multi-layer wiring layer 60 has a configuration in which a plurality of wirings are laminated via an insulating film serving as an interlayer insulating film (interlayer insulating layer). The multi-layer wiring layer 60 includes, for example, two or more layers of wirings, or three or more layers of wirings.

[0078] The wiring of the multi-layer wiring layer 60 is formed using a metal material such as aluminum (Al), copper (Cu), or tungsten (W). The wiring of the multi-layer wiring layer 60 may be formed using polysilicon (Poly-Si) or other conductive materials. The interlayer insulating film is formed using, for example, silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or the like.

[0079] For example, the above-mentioned transistors (transfer transistor, amplifying transistor, selection transistor, reset transistor, etc.) are provided in the semiconductor layer 10 and the multilayer wiring layer 60. The above-mentioned pixel control unit 111, signal processing unit 112, control unit 113, processing unit 114, etc. (see FIG. 1) can be provided on a substrate separate from the semiconductor layer 10, or in the semiconductor layer 10 and the multilayer wiring layer 60.

[0080] 6, the imaging device 1 has trenches 71, 72, and 73. The trenches 71, 72, and 73 are each an isolation portion (groove portion) and are made of, for example, an insulating material. The trench 71 is provided between a plurality of adjacent photoelectric conversion units 12 in the effective pixel region 101, and isolates the photoelectric conversion units 12. At least a portion of the trench 71 is provided at the boundary between adjacent effective pixels P1 (or photoelectric conversion units 12).

[0081] The trenches 71 may be formed in the semiconductor layer 10 so as to surround the photoelectric conversion units 12 of each effective pixel P1. The trenches 71 may have, for example, an FTI structure and are provided so as to penetrate the semiconductor layer 10. The trenches 71 may be formed between adjacent photoelectric conversion units 12 so as to reach the surface 11S2 of the semiconductor layer 10, as in the example shown in FIG.

[0082] The trenches 72 are provided between adjacent photoelectric conversion units 12 in the light-shielded pixel region 102, and separate the photoelectric conversion units 12. At least a portion of the trenches 72 is provided at the boundary between adjacent light-shielded pixels P2 (or photoelectric conversion units 12).

[0083] The trenches 72 may be formed in the semiconductor layer 10 so as to surround the photoelectric conversion units 12 of each light-shielded pixel P2. The trenches 72 may have, for example, an FTI structure and are provided so as to penetrate the semiconductor layer 10. The trenches 72 may be formed, for example, between adjacent photoelectric conversion units 12 so as to reach the surface 11S2 of the semiconductor layer 10.

[0084] The trenches 73 are provided in the dummy pattern region 103, for example, between adjacent photoelectric conversion units 12, and separate the photoelectric conversion units 12. At least a portion of the trenches 73 is provided at the boundary between adjacent cells P3 (or photoelectric conversion units 12).

[0085] The trenches 73 may be formed in the semiconductor layer 10 so as to surround the photoelectric conversion units 12 of each cell P3. The trenches 73 may have, for example, an FTI structure and are provided so as to penetrate the semiconductor layer 10. The trenches 73 may be formed, for example, between adjacent photoelectric conversion units 12 so as to reach the surface 11S2 of the semiconductor layer 10.

[0086] An insulating film, such as a silicon oxide film, a silicon nitride film, an aluminum oxide film, or the like, is provided inside each of the trenches 71 to 73. Alternatively, polysilicon, a metal material, another insulating material, or the like may be buried in the trenches 71 to 73. The trenches 71 to 73 may be configured with a semiconductor region (a p-type semiconductor region or an n-type semiconductor region) formed by ion implantation.

[0087] Moreover, the trenches 71 to 73 may be formed using other insulating materials having a low refractive index. The trenches 71 to 73 may have a gap (hollow). In the imaging device 1, the trenches 71 to 73 are provided, thereby suppressing leakage of electric charges photoelectrically converted by the photoelectric conversion unit 12 to surrounding pixels. Furthermore, it is possible to suppress leakage of unnecessary light to surrounding pixels. For example, it is possible to suppress the occurrence of color mixing.

[0088] The imaging device 1 is provided with a light shielding member 40 as in the example shown in Fig. 6. The light shielding member 40 is a light shielding portion (light shielding film) made of a material that blocks light, and is provided on the surface 11S1 side of the semiconductor layer 10. In the example shown in Fig. 6, the light shielding member 40 is provided for the light-shielded pixel region 102 and the dummy pattern region 103, and is located on the surface 11S1 of the semiconductor layer 10.

[0089] The light-shielding member 40 is formed so as to cover the entire light-shielded pixel region 102 and the dummy pattern region 103. For example, the light-shielding member 40 is provided so as to cover all the light-shielded pixels P2 arranged in the light-shielded pixel region 102 and all the cells P3 arranged in the dummy pattern region 103.

[0090] The light shielding member 40 is made of, for example, a metal material that blocks light (aluminum (Al), tungsten (W), copper (Cu), etc.). The light shielding member 40 may be made of a material that absorbs light. The light shielding member 40 may be made of a laminated film in which multiple films (for example, metal films such as copper, aluminum, etc.) are laminated.

[0091] The imaging device 1 may have at least one of a fixed charge film and an antireflection film on the surface 11S1 side of the semiconductor layer 10. As an example, the fixed charge film and the antireflection film are made of a metal compound (metal oxide, metal nitride, etc.) and can also be called a metal compound layer.

[0092] The fixed charge film is a film having a fixed charge and can be formed using a high dielectric material. For example, the fixed charge film is made of a metal oxide such as hafnium oxide or aluminum oxide. For example, the fixed charge film is a film having a negative fixed charge.

[0093] In the imaging device 1, the fixed charge film is provided to suppress the generation of dark current at the interface of the semiconductor layer 10. The fixed charge film may be formed of another metal oxide film, or may be formed using a metal nitride film or a metal oxynitride film. A film having a positive fixed charge may be provided as the fixed charge film.

[0094] The anti-reflection film is, for example, made of a metal oxide such as hafnium oxide or tantalum oxide. The anti-reflection film is provided on the surface 11S1 side of the semiconductor layer 10 to reduce (suppress) reflection. The anti-reflection film is provided, for example, so as to be laminated with the fixed charge film. The anti-reflection film may be made of an insulating material such as silicon nitride (SiN), silicon oxide (SiO), or aluminum oxide (AlO), or may be made of other materials.

[0095] As described above, the imaging device 1 is configured so that the pattern density of the trenches 73 is different from the pattern density of the trenches 71. The pattern density of the trenches 73 in the dummy pattern region 103 is greater than the pattern density of the trenches 71 in the effective pixel region 101, as in the examples shown in Figures 3 and 7. This makes it possible to suppress manufacturing variations in the trenches in the imaging device 1.

[0096] If the trenches in the effective pixel region and the dummy pattern region are provided with the same pattern density, there is a risk that a large difference in etching depth of the trenches between the effective pixel region and the dummy pattern region will occur due to the influence of the position in the pixel section, the layout of the trenches, etc. In this case, a trench with a predetermined length (depth) will not be formed, and charge leakage may occur.

[0097] Generally, when etching a pattern laid out periodically (in an array) into a trench shape, the etching depth is likely to be shallower in trenches closer to the edge than in trenches closer to the center. This is because the local pattern density is smaller near the edge than near the center, which causes differences in the behavior of the plasma during the etching process. Therefore, the above-mentioned charge leakage is relatively more likely to occur in the light-shielded pixel area than in the effective pixel area.

[0098] In this embodiment, the pattern density of the trenches 73 in the dummy pattern region 103 is set to be greater than the pattern density of the trenches 71 in the effective pixel region 101. This makes it possible to suppress manufacturing variations in the trenches (for example, variations in the length of the trenches in the Z-axis direction). For example, even near the end of the pixel section 100, it becomes possible to form a trench having an FTI structure with high accuracy by dry etching.

[0099] In the imaging device 1 according to the present embodiment, a trench having a predetermined length can be formed, and it is possible to suppress the occurrence of charge leakage. A local decrease in the pattern density of the trench in the outer periphery of the effective pixel area 101 is mitigated, and it is possible to suppress the occurrence of processing defects of the trench. It is possible to improve the yield of the imaging device 1.

[0100] In the imaging device 1, the arrangement period of the trenches 73 in the X-axis direction (or Y-axis direction) may be shorter (narrower) than the arrangement period of the trenches 71 in the X-axis direction (or Y-axis direction). Also, the arrangement period of the trenches 73 in the X-axis direction (or Y-axis direction) may be shorter than the arrangement period of the trenches 72 in the X-axis direction (or Y-axis direction).

[0101] 7, for example, in the imaging device 1, the arrangement period d3 (pitch) of the trenches 73 is shorter than the arrangement period d1 of the trenches 71. The arrangement period d3 of the trenches 73 is shorter than the arrangement period d2 of the trenches 72. It is possible to prevent the occurrence of defective trench processing in the light-shielded pixel region 102 and the dummy pattern region 103. This makes it possible to effectively prevent the intrusion of electric charges between adjacent effective pixels P1 in the effective pixel region 101, between light-shielded pixels P2 in the light-shielded pixel region 102, or between the effective pixel P1 and the light-shielded pixel P2.

[0102] In the imaging device 1 according to the present embodiment, it is possible to suppress the inclusion of noise in pixel signals due to poor trench processing, thereby improving the quality of pixel signals, i.e., it is possible to suppress the occurrence of blooming defects.

[0103] [Actions and Effects] The photodetector according to this embodiment includes a first region (effective pixel region 101) having a plurality of first pixels (effective pixels P1) each including a first photoelectric conversion element (photoelectric conversion unit 12) provided in a semiconductor layer (semiconductor layer 10), a first trench (trench 71) provided between the plurality of adjacent first pixels in the semiconductor layer, and a second region (dummy pattern region 103) having a second trench (trench 73) provided in a first direction and a second direction intersecting the first direction in the semiconductor layer and provided around the first region. The pattern density of the second trench is greater than the pattern density of the first trench.

[0104] The photodetector (imaging device 1) according to this embodiment has an effective pixel region 101 in which trenches 71 are provided, and a dummy pattern region 103 in which trenches 73 are provided. The pattern density of trenches 73 is greater than the pattern density of trenches 71. This makes it possible to suppress processing defects in the trenches. It is possible to realize a photodetector capable of suppressing deterioration in quality.

[0105] The photodetector according to the present embodiment further includes a third region (light-shielded pixel region 102) provided between the first region and the second region. The third region includes a plurality of second pixels (light-shielded pixels P2) each including a second photoelectric conversion element provided in the semiconductor layer, a fourth trench (trench 72) provided between the plurality of adjacent second pixels in the semiconductor layer, and a light-shielding member (light-shielding member 40) provided on the semiconductor layer. The pattern density of the second trench is greater than the pattern density of the fourth trench.

[0106] The photodetector (imaging device 1) according to this embodiment has a light-shielded pixel region 102 in which trenches 72 are provided. The pattern density of trenches 73 is greater than the pattern density of trenches 72. This makes it possible to suppress processing defects in the trenches. It is possible to realize a photodetector capable of suppressing deterioration in quality.

[0107] Next, a modified example of the present disclosure will be described. In the following, the same components as those in the above embodiment are denoted by the same reference numerals, and the description thereof will be omitted as appropriate.

[0108] <2. Modifications> (2-1. Variation 1) In the above-described embodiment, a configuration example of the imaging device 1 has been described, but this is merely an example, and the configuration of the imaging device 1 is not limited to the above-described example. Fig. 8 is a diagram for explaining a configuration example of a pixel section of an imaging device according to Modification 1 of the present disclosure. The imaging device 1 may be configured such that the pattern density of the trenches 73 in the dummy pattern region 103 varies depending on the distance from the center of the pixel section 100 (or the distance from the effective pixel region 101).

[0109] The pattern density of the trenches 73 may be increased, for example, in the dummy pattern region 103 as it moves away from the effective pixel region 101 (or the light-shielding pixel region 102). As in the example shown in Fig. 8, the arrangement period of the trenches 73 in the X-axis direction may be decreased (narrowed) as it moves away from the effective pixel region 101 (or the light-shielding pixel region 102).

[0110] Furthermore, the arrangement period of the trenches 73 in the Y-axis direction may become shorter as the distance from the effective pixel region 101 increases. In this modification, the pattern density of the trenches in the dummy pattern region 103 can be gradually changed. This makes it possible to reduce the difference in the pattern density of the trenches between the effective pixel region 101 (or the light-shielded pixel region 102) and the dummy pattern region 103, and to suppress the occurrence of defective trench processing.

[0111] (2-2. Variation 2) Fig. 9 is a diagram for explaining a configuration example of a pixel unit of an imaging device according to Modification 2. The imaging device 1 may have a trench 74 as in the example shown in Fig. 9. The trench 74 is formed in the semiconductor layer 10 in a dummy pattern region 103. The trench 74 is provided, for example, adjacent to the trench 73 in the semiconductor layer 10. As in the example shown in Fig. 9, a plurality of trenches 74 may be provided discretely in the dummy pattern region 103. For example, the trench 74 may be provided for each cell P3.

[0112] The trench 74 has, for example, an FTI structure similar to the trench 73, and is provided so as to penetrate the semiconductor layer 10. As an example, the trench 74 may have a cross shape in a plan view. The trench 74 may have a line shape (linear) in a plan view, or may have another shape. The trench 74 can be used to correct (adjust) the pattern density of the trench, and can also be called a correction pattern.

[0113] In the imaging device 1 according to this modification, the trench 74 allows fine adjustment of the pattern density of the trench in the dummy pattern region 103. This effectively prevents the occurrence of trench processing defects. Note that the shape and arrangement of the trench 74 are not limited to the illustrated example and can be changed as appropriate.

[0114] 10 and 11 are diagrams for explaining another configuration example of the pixel section of the imaging device according to Modification 2. The imaging device 1 may be configured so that the pattern density of the trenches 74 varies depending on the distance from the center of the pixel section 100 (or the distance from the effective pixel area 101) in the dummy pattern area 103. Also, a plurality of trenches 74 having different shapes (trench 74a and trench 74b in FIG. 10) may be provided.

[0115] In the dummy pattern region 103 of the imaging device 1, the trenches 73 and the trenches 74 may be provided so that the pattern density of the trenches increases with increasing distance from the effective pixel region 101. For example, as shown in the example of FIG 10, a trench 74a having a linear shape may be arranged in a cell P3 located relatively close to the light-shielded pixel region 102, and a trench 74b having a cross shape may be arranged in a cell P3 located relatively far from the light-shielded pixel region 102.

[0116] In the imaging device 1, the number of trenches 74 may vary depending on the distance from the center of the pixel section 100 (or the distance from the effective pixel region 101). For example, as in the example shown in Fig. 11, the imaging device 1 may be configured such that the number of cells P3 in which the trenches 74 are provided increases with increasing distance from the effective pixel region 101 (or the light-shielded pixel region 102).

[0117] 10 or 11, it is also possible to reduce the difference in trench pattern density (i.e., the step in pattern density) between the effective pixel region 101 (or the light-shielded pixel region 102) and the dummy pattern region 103. This makes it possible to suppress the occurrence of defective trench processing.

[0118] (2-3. Variation 3) Fig. 12 is a diagram for explaining a configuration example of a pixel unit of an imaging device according to Modification 3. As in the example shown in Fig. 12, the size of the light-shielded pixel region 102 may be different above, below, left, and right of the effective pixel region 101. In the imaging device 1, a different number of light-shielded pixels P2 may be provided on the upper side, lower side, left side, and right side of the effective pixel region 101.

[0119] Furthermore, the size of the dummy pattern region 103 may be different above, below, left, and right of the effective pixel region 101. In the imaging device 1, a different number of cells P3 may be arranged on the upper side, lower side, left side, and right side of the light-shielded pixel region 102.

[0120] (2-4. Variation 4) Fig. 13 is a diagram for explaining a configuration example of a pixel unit of an imaging device according to Modification 4. As in the example shown typically in Fig. 13, the width of trench 73 may be larger (wider) than the width of trench 71 (or trench 72). For example, the width of trench 73 in the X-axis direction may be larger than the width of trench 71 (or trench 72) in the X-axis direction.

[0121] Moreover, the width of trench 73 in the Y-axis direction may be greater than the width of trench 71 (or trench 72) in the Y-axis direction. In the case of this modification, the same effects as those of the above-described embodiment can be obtained.

[0122] (2-5. Variation 5) 14 is a diagram for explaining a configuration example of an imaging device according to Modification 5. The trenches (trench 71 to trench 73, etc.) of the imaging device 1 may be formed to a depth between the surface 11S1 and the surface 11S2 of the semiconductor layer 10. For example, as shown in FIG. 14, the trenches 71 to 73 may be provided from the surface 11S1 side of the semiconductor layer 10 to a depth between the surface 11S1 and the surface 11S2 of the semiconductor layer 10. In the case of this modification, it is also possible to suppress variations in the processing depth of the trenches (for example, insufficient processing depth at the chip peripheral portion).

[0123] <3. Application Examples> The imaging device 1 and the like can be applied to any type of electronic device equipped with an imaging function, for example, a camera system such as a digital still camera or a video camera, a mobile phone equipped with an imaging function, etc. Fig. 15 shows a schematic configuration of an electronic device 1000.

[0124] The electronic device 1000 includes, for example, a lens group 1001, an imaging device 1, a DSP (Digital Signal Processor) circuit 1002, a frame memory 1003, a display unit 1004, a recording unit 1005, an operation unit 1006, and a power supply unit 1007, which are interconnected via a bus line 1008.

[0125] The lens group 1001 captures incident light (image light) from a subject and forms an image on the imaging surface of the imaging device 1. The imaging device 1 converts the amount of incident light formed on the imaging surface by the lens group 1001 into an electrical signal on a pixel-by-pixel basis and supplies the signal to the DSP circuit 1002 as a pixel signal.

[0126] The DSP circuit 1002 is a signal processing circuit that processes a signal supplied from the imaging device 1. The DSP circuit 1002 outputs image data obtained by processing the signal from the imaging device 1. The frame memory 1003 temporarily holds the image data processed by the DSP circuit 1002 on a frame-by-frame basis.

[0127] The display unit 1004 is, for example, a panel-type display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and records image data of moving images or still images captured by the imaging device 1 in a recording medium such as a semiconductor memory or a hard disk.

[0128] The operation unit 1006 outputs operation signals for various functions of the electronic device 1000 in accordance with operations by a user. The power supply unit 1007 appropriately supplies various types of power to the DSP circuit 1002, the frame memory 1003, the display unit 1004, the recording unit 1005, and the operation unit 1006 as operating power sources to these power sources.

[0129] <4. Application Examples> (Example of application to moving objects) The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, a robot, etc.

[0130] FIG. 16 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving object control system to which the technology according to the present disclosure can be applied.

[0131] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 16, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also, as functional configurations of the integrated control unit 12050, a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053 are illustrated.

[0132] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0133] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as head lamps, back lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves or signals of various switches transmitted from a portable device that replaces a key may be input to the body system control unit 12020. The body system control unit 12020 receives the input of these radio waves or signals and controls the door lock device, power window device, lamps, and the like of the vehicle.

[0134] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture an image outside the vehicle and receives the captured image. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for a person, a car, an obstacle, a sign, or characters on a road surface, based on the received image.

[0135] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0136] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing.

[0137] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the outside-of-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output a control command to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.

[0138] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on the driver's operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0139] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside-vehicle information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside-vehicle information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0140] The audio / video output unit 12052 transmits at least one output signal of audio and video to an output device capable of visually or audibly notifying information to passengers in the vehicle or the outside of the vehicle. In the example of Fig. 16, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as the output device. The display unit 12062 may include at least one of an on-board display and a head-up display, for example.

[0141] FIG. 17 is a diagram showing an example of the installation position of the imaging unit 12031.

[0142] In FIG. 17, a vehicle 12100 has imaging units 12101, 12102, 12103, 12104, and 12105 as an imaging unit 12031.

[0143] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided at positions such as the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the upper part of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The images of the front acquired by the imaging units 12101 and 12105 are mainly used to detect a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.

[0144] 17 shows an example of the imaging ranges of the imaging units 12101 to 12104. An imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and an imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, an overhead image of the vehicle 12100 viewed from above is obtained by superimposing the image data captured by the imaging units 12101 to 12104.

[0145] At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera made up of a plurality of imaging elements, or may be an imaging element having pixels for detecting a phase difference.

[0146] For example, the microcomputer 12051 can extract, as a preceding vehicle, a three-dimensional object that is the closest three-dimensional object on the travel path of the vehicle 12100 and travels at a predetermined speed (for example, 0 km / h or more) in approximately the same direction as the vehicle 12100, by calculating the distance to each three-dimensional object in the imaging ranges 12111 to 12114 and the change over time of this distance (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104. Furthermore, the microcomputer 12051 can set a vehicle distance to be secured in advance in front of the preceding vehicle, and perform automatic brake control (including follow-up stop control) and automatic acceleration control (including follow-up start control). In this way, cooperative control can be performed for the purpose of automatic driving that travels autonomously without relying on the driver's operation.

[0147] For example, the microcomputer 12051 classifies and extracts three-dimensional object data on three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0148] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured images of the imaging units 12101 to 12104. The recognition of such a pedestrian is performed, for example, by a procedure of extracting feature points in the captured images of the imaging units 12101 to 12104 as infrared cameras, and a procedure of performing pattern matching processing on a series of feature points that indicate the contour of an object to determine whether or not the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.

[0149] An example of a mobile object control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to, for example, the imaging unit 12031 among the configurations described above. Specifically, for example, the imaging device 1 or the like can be applied to the imaging unit 12031. By applying the technology according to the present disclosure to the imaging unit 12031, it becomes possible to obtain a high-definition captured image. It becomes possible to perform high-precision control using the captured image in the mobile object control system.

[0150] (Application example to endoscopic surgery system) The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

[0151] FIG. 18 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.

[0152] 18 shows a state in which an operator (doctor) 11131 is performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical tools 11110 such as an insufflation tube 11111 and an energy treatment tool 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0153] The endoscope 11100 is composed of a lens barrel 11101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the illustrated example, the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may be configured as a so-called flexible scope having a flexible lens barrel.

[0154] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is irradiated via the objective lens toward an observation target in the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0155] An optical system and an image sensor are provided inside the camera head 11102, and reflected light (observation light) from an observation target is collected on the image sensor by the optical system. The observation light is photoelectrically converted by the image sensor to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to an observation image. The image signal is transmitted to a camera control unit (CCU) 11201 as RAW data.

[0156] The CCU 11201 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and performs overall control of the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102, and performs various types of image processing on the image signal, such as development processing (demosaic processing), for displaying an image based on the image signal.

[0157] Under the control of the CCU 11201, the display device 11202 displays an image based on an image signal that has been subjected to image processing by the CCU 11201.

[0158] The light source device 11203 is composed of a light source such as an LED (Light Emitting Diode), and supplies the endoscope 11100 with irradiation light when photographing an operation site or the like.

[0159] The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiated light, magnification, focal length, etc.) of the endoscope 11100.

[0160] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 sends gas into the body cavity of the patient 11132 via the insufflation tube 11111 to inflate the body cavity for the purpose of securing the field of view of the endoscope 11100 and securing the working space of the surgeon. The recorder 11207 is a device capable of recording various information related to the surgery. The printer 11208 is a device capable of printing various information related to the surgery in various formats such as text, image, or graph.

[0161] The light source device 11203 that supplies irradiation light to the endoscope 11100 when photographing the surgical site can be composed of a white light source composed of, for example, an LED, a laser light source, or a combination of these. When the white light source is composed of a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so that the white balance of the captured image can be adjusted in the light source device 11203. In this case, it is also possible to capture images corresponding to each of the RGB colors in a time-division manner by irradiating the observation object with laser light from each of the RGB laser light sources in a time-division manner and controlling the driving of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter to the image sensor.

[0162] The light source device 11203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. The driving of the image sensor of the camera head 11102 may be controlled in synchronization with the timing of the change in the light intensity to obtain images in a time-division manner, and the images may be synthesized to generate an image with a high dynamic range that is free of so-called blackout and whiteout.

[0163] The light source device 11203 may be configured to supply light of a predetermined wavelength band corresponding to the special light observation. In the special light observation, for example, by utilizing the wavelength dependency of light absorption in body tissue, a narrow band light is irradiated compared to the irradiated light (i.e., white light) during normal observation, and a predetermined tissue such as blood vessels on the mucous membrane surface is photographed with high contrast, so-called narrow band imaging is performed. Alternatively, in the special light observation, a fluorescent observation may be performed in which an image is obtained by fluorescence generated by irradiating an excitation light. In the fluorescent observation, it is possible to irradiate an excitation light to a body tissue and observe the fluorescence from the body tissue (autofluorescence observation), or to locally inject a reagent such as indocyanine green (ICG) into the body tissue and irradiate the body tissue with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow band light and / or excitation light corresponding to such special light observation.

[0164] FIG. 19 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

[0165] The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other by a transmission cable 11400 so as to be able to communicate with each other.

[0166] The lens unit 11401 is an optical system provided at the connection portion with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.

[0167] The imaging unit 11402 is composed of an imaging element. The imaging element constituting the imaging unit 11402 may be one (so-called single-plate type) or multiple (so-called multi-plate type). When the imaging unit 11402 is composed of a multi-plate type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining the image signals. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to 3D (Dimensional) display. By performing 3D display, the surgeon 11131 can more accurately grasp the depth of the biological tissue in the surgical site. Note that when the imaging unit 11402 is composed of a multi-plate type, multiple lens units 11401 may be provided corresponding to each imaging element.

[0168] Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101, immediately behind the objective lens.

[0169] The driving unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be appropriately adjusted.

[0170] The communication unit 11404 is configured by a communication device for transmitting and receiving various information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 via the transmission cable 11400 as RAW data.

[0171] Furthermore, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201, and supplies the control signal to the camera head control unit 11405. The control signal includes information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of capturing the image, and / or information specifying the magnification and focus of the captured image.

[0172] The image capturing conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by a user, or may be automatically set by the control unit 11413 of the CCU 11201 based on an acquired image signal. In the latter case, the endoscope 11100 is equipped with a so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

[0173] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404.

[0174] The communication unit 11411 is configured with a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

[0175] Furthermore, the communication unit 11411 transmits, to the camera head 11102, a control signal for controlling the driving of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

[0176] The image processing unit 11412 performs various types of image processing on the image signal, which is RAW data sent from the camera head 11102 .

[0177] The control unit 11413 performs various controls related to imaging of the surgical site etc. by the endoscope 11100 and display of the captured image obtained by imaging the surgical site etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

[0178] Further, the control unit 11413 causes the display device 11202 to display the captured image showing the surgical site, etc., based on the image signal that has been image-processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition techniques. For example, the control unit 11413 can recognize surgical tools such as forceps, specific living body parts, bleeding, mist when the energy treatment tool 11112 is used, etc., by detecting the shape and color of the edge of an object included in the captured image. When the control unit 11413 causes the display device 11202 to display the captured image, it may use the recognition result to superimpose various types of surgery support information on the image of the surgical site. By superimposing and presenting the surgery support information to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.

[0179] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable for communication of electrical signals, an optical fiber for optical communication, or a composite cable of these.

[0180] Here, in the illustrated example, communication is performed wired using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

[0181] An example of an endoscopic surgery system to which the technology according to the present disclosure can be applied has been described above. Of the configurations described above, the technology according to the present disclosure can be suitably applied to, for example, the imaging unit 11402 provided in the camera head 11102 of the endoscope 11100. By applying the technology according to the present disclosure to the imaging unit 11402, it is possible to provide a high-definition endoscope 11100.

[0182] Although the present disclosure has been described above by giving embodiments, modifications, application examples, and application examples, the present technology is not limited to the above-mentioned embodiments, etc., and various modifications are possible. For example, the above-mentioned modifications have been described as modifications of the above-mentioned embodiments, but the configurations of the modifications can be appropriately combined. For example, the present disclosure is not limited to back-illuminated image sensors, and can also be applied to front-illuminated image sensors.

[0183] In the above-mentioned embodiment, an imaging device is described as an example, but the light detection device of the present disclosure may be, for example, a device that receives incident light and converts the light into an electric charge. The output signal may be a signal of image information or a signal of distance measurement information. The light detection device (imaging device) may be applied to an image sensor, a distance measurement sensor, etc.

[0184] A photodetector according to an embodiment of the present disclosure includes a first region having a plurality of first pixels each including a first photoelectric conversion element provided in a semiconductor layer and a first trench provided between the plurality of adjacent first pixels in the semiconductor layer, and a second region having a second trench provided in the semiconductor layer in a first direction and a second direction intersecting the first direction and provided around the first region. The pattern density of the second trench is greater than the pattern density of the first trench. This makes it possible to suppress processing defects of the trench. It is possible to realize a photodetector capable of suppressing deterioration in quality.

[0185] A photodetector according to an embodiment of the present disclosure includes a first region having a plurality of first pixels each including a first photoelectric conversion element provided in a semiconductor layer and a first trench provided between the plurality of adjacent first pixels in the semiconductor layer, and a second region having a second trench provided in the semiconductor layer in a first direction and a second direction intersecting the first direction and provided around the first region. The second trenches are provided at a higher density than the first trenches in a plan view. This makes it possible to suppress processing defects of the trenches. It becomes possible to realize a photodetector capable of suppressing deterioration in quality.

[0186] In addition, the effects described in this specification are merely examples and are not limited to the description, and other effects may be obtained. In addition, the present disclosure may have the following configurations. (1) a first region including a plurality of first pixels each including a first photoelectric conversion element provided in a semiconductor layer, and a first trench provided between the plurality of first pixels adjacent to each other in the semiconductor layer; a second region provided around the first region, the second region including a second trench provided in the semiconductor layer in a first direction and a second direction intersecting the first direction; Equipped with The pattern density of the second trench is greater than the pattern density of the first trench. Light detection device. (2) The semiconductor layer includes a light shielding member disposed on the second region. 2. The optical detection device according to claim 1. (3) The first trench and the second trench are provided so as to be continuous with each other in a plan view. The optical detection device according to (1) or (2). (4) The arrangement period of the second trenches in the first direction is shorter than the arrangement period of the first trenches in the first direction. The optical detection device according to any one of (1) to (3). (5) The pattern density of the second trenches increases in the second region with increasing distance from the first region. The photodetector according to any one of (1) to (4). (6) The arrangement period of the second trenches in the first direction becomes shorter as the distance from the first region increases. The photodetector according to any one of (1) to (5). (7) The second region includes a third trench provided adjacent to the second trench in the semiconductor layer. The photodetector according to any one of (1) to (6). (8) In a plan view, a plurality of the third trenches are provided discretely in the second region. The light detection device according to (7) above. (9) The pattern density of the third trenches increases in the second region with increasing distance from the first region. The optical detection device according to (7) or (8) above. (10) the second region has a cell surrounded by the second trench and in which the third trench is provided, The number of the cells in which the third trenches are provided increases with increasing distance from the first region. The photodetector according to any one of (7) to (8). (11) The width of the second trench in the first direction is greater than the width of the first trench in the first direction. The optical detection device according to any one of (1) to (10) above. (12) The second region is provided so as to surround the first region. The photodetector according to any one of (1) to (11) above. (13) the first pixel includes the first photoelectric conversion element and a first transistor; the second region has a cell surrounded by the second trench and in which a second transistor is provided; a gate of the first transistor is connected to a wiring to which a first signal is input; The gate of the second transistor is connected to a wiring to which a power supply voltage is applied, or to a wiring to which a reference voltage is applied. The photodetector according to any one of (1) to (12) above. (14) the first signal is a signal that controls the first transistor, The first transistor is a transistor capable of transferring charges photoelectrically converted by the first photoelectric conversion element. The optical detection device according to (13) above. (15) The first trench is provided to penetrate the semiconductor layer. The photodetector according to any one of (1) to (14) above. (16) Further comprising a third region provided between the first region and the second region, The third region is a plurality of second pixels each including a second photoelectric conversion element provided in the semiconductor layer; a fourth trench provided between adjacent second pixels in the semiconductor layer; a light shielding member provided on the semiconductor layer; have The photodetector according to any one of (1) to (15) above. (17) The pattern density of the second trench is greater than the pattern density of the fourth trench. The optical detection device according to (16) above. (18) The first trench and the fourth trench are provided so as to be continuous with each other in a plan view. The optical detection device according to (16) or (17) above. (19) The arrangement period of the second trenches in the first direction is shorter than the arrangement period of the fourth trenches in the first direction. The photodetector according to any one of (16) to (19) above. (20) An optical system; a light detection device that receives light transmitted through the optical system; Equipped with The light detection device includes: a first region including a plurality of first pixels each including a first photoelectric conversion element provided in a semiconductor layer, and a first trench provided between the plurality of first pixels adjacent to each other in the semiconductor layer; a second region provided around the first region, the second region including a second trench provided in the semiconductor layer in a first direction and a second direction intersecting the first direction; having The pattern density of the second trench is greater than the pattern density of the first trench. electronic equipment. (twenty one) a first region including a plurality of first pixels each including a first photoelectric conversion element provided in a semiconductor layer, and a first trench provided between the plurality of first pixels adjacent to each other in the semiconductor layer; a second region provided around the first region, the second region including a second trench provided in the semiconductor layer in a first direction and a second direction intersecting the first direction; Equipped with In a plan view, the pattern density of the second trench is greater than the pattern density of the first trench. Light detection device. (twenty two) a first region including a plurality of first pixels each including a first photoelectric conversion element provided in a semiconductor layer, and a first trench provided between the plurality of first pixels adjacent to each other in the semiconductor layer; a second region provided around the first region, the second region including a second trench provided in the semiconductor layer in a first direction and a second direction intersecting the first direction; Equipped with The second trenches are provided at a higher density than the first trenches in a plan view. Light detection device. [Explanation of symbols]

[0187] 1...imaging device, 10...semiconductor layer, 12...photoelectric conversion section, 40...light shielding member, 71, 72, 73, 74...trench, 100...pixel section, 101...effective pixel region, 102...light shielding pixel region, 103...dummy pattern region.

Claims

1. a first region including a plurality of first pixels each including a first photoelectric conversion element provided in a semiconductor layer, and a first trench provided between the plurality of first pixels adjacent to each other in the semiconductor layer; a second region provided around the first region, the second trench being provided in the semiconductor layer in a first direction and a second direction intersecting the first direction; Equipped with The pattern density of the second trench is greater than the pattern density of the first trench. Light detection device.

2. The semiconductor layer includes a light shielding member disposed on the second region.

2. The optical detection device according to claim 1.

3. The first trench and the second trench are provided so as to be continuous with each other in a plan view.

2. The optical detection device according to claim 1.

4. The arrangement period of the second trenches in the first direction is shorter than the arrangement period of the first trenches in the first direction.

2. The optical detection device according to claim 1.

5. The pattern density of the second trenches increases in the second region with increasing distance from the first region.

2. The optical detection device according to claim 1.

6. The arrangement period of the second trenches in the first direction becomes shorter as the distance from the first region increases.

2. The optical detection device according to claim 1.

7. The second region includes a third trench provided adjacent to the second trench in the semiconductor layer.

2. The optical detection device according to claim 1.

8. In a plan view, a plurality of the third trenches are provided discretely in the second region.

8. The optical detection device according to claim 7.

9. The pattern density of the third trenches increases in the second region with increasing distance from the first region.

8. The optical detection device according to claim 7.

10. the second region has a cell surrounded by the second trench and in which the third trench is provided, The number of the cells in which the third trenches are provided increases with increasing distance from the first region.

8. The optical detection device according to claim 7.

11. The width of the second trench in the first direction is greater than the width of the first trench in the first direction.

2. The optical detection device according to claim 1.

12. The second region is provided so as to surround the first region.

2. The optical detection device according to claim 1.

13. the first pixel includes the first photoelectric conversion element and a first transistor; the second region has a cell surrounded by the second trench and in which a second transistor is provided; a gate of the first transistor is connected to a wiring to which a first signal is input; The gate of the second transistor is connected to a wiring to which a power supply voltage is applied, or to a wiring to which a reference voltage is applied.

2. The optical detection device according to claim 1.

14. the first signal is a signal that controls the first transistor, The first transistor is a transistor capable of transferring charges photoelectrically converted by the first photoelectric conversion element.

14. The optical detection device of claim 13.

15. The first trench is provided to penetrate the semiconductor layer.

2. The optical detection device according to claim 1.

16. Further comprising a third region provided between the first region and the second region, The third region is a plurality of second pixels each including a second photoelectric conversion element provided in the semiconductor layer; a fourth trench provided between adjacent second pixels in the semiconductor layer; a light shielding member provided on the semiconductor layer; have 2. The optical detection device according to claim 1.

17. The pattern density of the second trench is greater than the pattern density of the fourth trench.

17. The optical detection device of claim 16.

18. The first trench and the fourth trench are provided so as to be continuous with each other in a plan view.

17. The optical detection device of claim 16.

19. The arrangement period of the second trenches in the first direction is shorter than the arrangement period of the fourth trenches in the first direction.

17. The optical detection device of claim 16.

20. An optical system; a light detection device that receives light transmitted through the optical system; Equipped with The light detection device includes: a first region including a plurality of first pixels each including a first photoelectric conversion element provided in a semiconductor layer, and a first trench provided between the plurality of first pixels adjacent to each other in the semiconductor layer; a second region provided around the first region, the second trench being provided in the semiconductor layer in a first direction and a second direction intersecting the first direction; having The pattern density of the second trench is greater than the pattern density of the first trench. electronic equipment.

Images