Light-emitting device
By adopting the curved design of the flexible display part and the protective layer support structure in the display device, the problem of the display separation of existing display devices during wide screen applications is solved, and a small, lightweight, low power consumption and damage-resistant display effect is achieved.
Patent Information
- Application Number
- JP2025015875
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2013-12-24
- Filing Date
- 2025-02-03
- Publication Date
- 2025-04-11
- Estimated Expiration
- Not applicable · inactive patent
AI Technical Summary
When existing display devices are used in widescreen applications, hidden areas cause a sense of separation, affecting the visual effect, and it is difficult to achieve small, lightweight, low power consumption and damage-resistant display devices.
Using a flexible display part, a curved part is set in the non-center area through a bending design, and a partial display area is hidden by a curved display part to realize the sub-display function, and improve mechanical strength and flexibility through the protective layer and support structure.
It effectively reduces the external frame area of the display device, reduces power consumption, improves the continuity and damage resistance of the display, and realizes a highly flexible display device design.
Smart Images

Figure 2025062025000001_ABST
Abstract
Description
[Technical field]
[0001] The present invention relates to an article, a method, or a manufacturing method. , manufacture, or composition of matter. The present invention relates to, for example, a semiconductor device, a display device, a light-emitting device, a lighting device, a power storage device, In particular, one aspect of the present invention relates to a display device, an electric In particular, one embodiment of the present invention relates to an electroluminescent device, Electroluminescence (EL) phenomenon The present invention relates to a display device, an electronic device, or a manufacturing method thereof. [Background technology]
[0002] In recent years, display devices are expected to be used for a variety of purposes, and diversification is required. For example, in the case of a display device for a portable device, it is important that the display device is small, thin, and lightweight. On the other hand, it is desirable for the display device to have a large screen (wide display area). In rare cases, there is also a demand for reducing the area other than the display area of a display device (so-called narrow frame). There are.
[0003] In addition, light-emitting elements (also referred to as EL elements) that utilize the EL phenomenon can be easily made thin and lightweight. Features include high-speed response to input signals and the ability to be driven using a low-voltage DC power supply. The application of this material to display devices is being considered.
[0004] For example, Patent Document 1 discloses a front panel and a main body that are connected in a freely foldable manner. The present invention discloses a portable communication device having a display on the side. When unfolded, one side of each display is in contact with the other, It is a portable communication device that combines a large screen for playing games with a small and lightweight device. do. [Prior art documents] [Patent documents]
[0005] [Patent Document 1] JP 2000-184026 A Summary of the Invention [Problem to be solved by the invention]
[0006] However, since each display has a non-display area surrounding the display area, In this configuration, there is a non-display area at and near the seam between the two displays. The larger the display area, the easier it is to see an image displayed using multiple displays. To the viewer, the display appears separated (it is also said that the display has a sense of separation).
[0007] Therefore, one aspect of the present invention provides a display device or electronic device in which the sense of separation of the display is suppressed. Another object of the present invention is to provide a display device or electronic device that is small in size. Another object of the present invention is to provide a lightweight display device or Another object of the present invention is to provide an electronic device having a narrow frame. Another object of the present invention is to provide a display device or an electronic device. Another object of the present invention is to provide a display device or electronic device that is less susceptible to damage. An object of the present invention is to provide a display device or electronic device with reduced power consumption. Another object of one embodiment of the present invention is to provide a novel display device or electronic device. .
[0008] The description of these problems does not preclude the existence of other problems. The embodiment does not necessarily have to solve all of these problems. The above will become apparent from the description in the specification, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]
[0009] One embodiment of the present invention has a flexible display portion. The display portion has a bent portion. is located in a region other than the center of the display unit. The display unit may have a plurality of bent portions. In the case where the display device has a plurality of bent portions, at least one of the bent portions is located in an area other than the center of the display portion. do.
[0010] Further, one embodiment of the present invention includes a flexible display portion and a light-transmitting region. When the display unit is bent, the display unit is transparent through the light-transmitting region. A part of the transparent region is visible from the outside. As long as the device has a configuration including a member having the above functions, it may have other functions. It may also have functions such as a touch panel and a keyboard.
[0011] Another embodiment of the present invention includes a housing, a flexible display portion, and a roll-up portion. The display unit is connected to the winding unit, and the winding unit winds up and stores a part of the display unit. It has functions.
[0012] Another embodiment of the present invention includes a flexible display portion. The display portion has a first region and a second region. Even when the first area is stored so that it cannot be seen from the outside, The second area can be seen from the outside. Therefore, the second area can be used as a sub-display. It is possible.
[0013] In the above configuration, the method of storing the first area of the display unit so that it cannot be seen from the outside is as follows: The first region may be wound or folded. The device may be stored inside the body.
[0014] In each of the above configurations, the second area of the display unit has a function other than that of a sub-display. For example, the device may have a touch panel, keyboard, or other functions. This is also fine.
[0015] In each of the above configurations, the second region has a surface exposed by a light-transmitting member. may be protected from
[0016] The display unit may be flexible and may include, for example, an electroluminescence element. The semiconductor device may also be configured to include a transistor. The transistor may be a silicon The transistor may be a transistor using a silicon semiconductor or a transistor using an oxide semiconductor. The oxide semiconductor may be an oxide containing any one of indium, gallium, and zinc. can be used. Effect of the Invention
[0017] According to one embodiment of the present invention, a display device or an electronic device in which the sense of separation of the display is suppressed can be provided. In another embodiment of the present invention, a small-sized display device or electronic device can be provided. According to one embodiment of the present invention, a lightweight display device or electronic device can be provided. In one embodiment of the present invention, a display device or electronic device having a narrow frame can be provided. According to the present invention, a display device or electronic device that is not easily damaged can be provided. It is possible to provide a display device or electronic device with reduced power consumption. Thus, a novel display device or electronic device can be provided.
[0018] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have to have all of these effects. Effects other than these may also be included. The above is self-evident from the description, drawings, claims, etc. Other effects can be extracted from the claims and other descriptions. [Brief description of the drawings]
[0019] [Figure 1] 1A and 1B are diagrams illustrating examples of electronic devices. [Diagram 2] 1A and 1B are diagrams illustrating examples of electronic devices. [Diagram 3] 1A and 1B are diagrams illustrating examples of electronic devices. [Figure 4] 1A and 1B are diagrams illustrating examples of electronic devices. [Diagram 5] 1A and 1B are diagrams illustrating examples of electronic devices. [Figure 6] 1A and 1B are diagrams illustrating examples of electronic devices. [Figure 7] 1A and 1B are diagrams illustrating examples of electronic devices. [Figure 8] 1A and 1B are diagrams illustrating examples of electronic devices. [Figure 9] FIG. 1 illustrates an example of a display device. [Figure 10] FIG. 1 illustrates an example of a display device. [Figure 11] FIG. 1 illustrates an example of a display device. [Figure 12] FIG. 1 illustrates an example of a display device. [Figure 13] FIG. 1 illustrates an example of a display device. [Figure 14] FIG. 1 illustrates an example of a display device. [Figure 15] FIG. 1 illustrates an example of a display device. [Figure 16] FIG. 1 illustrates an example of a display device. [Figure 17] FIG. 1 illustrates an example of a display device. [Figure 18] 1A and 1B are diagrams illustrating examples of electronic devices. [Figure 19] 1A and 1B are diagrams illustrating examples of electronic devices. [Figure 20] 1A and 1B are diagrams illustrating examples of electronic devices. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0020] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the above-mentioned invention can be obtained by the following embodiments. It should not be construed as being limited to the contents described.
[0021] In the configuration of the invention described below, the same parts or parts having similar functions are referred to as the same parts. The same reference numerals are used in common among different drawings, and the repeated explanations are omitted. When referring to a function, the same hatch pattern may be used and no particular reference number may be given.
[0022] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in the actual embodiment, for ease of understanding. Therefore, the disclosed invention may not necessarily represent the actual position, size, range, etc. The present invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.
[0023] (Embodiment 1) In this embodiment, an electronic device to which one embodiment of the present invention is applied will be described with reference to FIGS. He explains.
[0024] The electronic device may be, for example, a television device (also called a television or television receiver). ), computers, digital cameras, digital video cameras, digital photo frames , mobile phones (also called mobile phones or mobile phone devices), portable game machines, personal digital assistants, sound Examples include sound reproduction devices and large gaming machines such as pachinko machines.
[0025] In addition to the display unit shown below, these electronic devices also have operation buttons, external connection ports, and speakers. The display unit may be provided with a touch panel or a sensor. This allows you to input information by touching the display or placing your finger over it. By operating the buttons, you can turn the power on and off, change the type of image displayed on the display, and change the volume. It is also possible to switch between the above.
[0026] The electronic device of this embodiment has a highly flexible display portion. The display unit can be folded by bending the display unit, which has high flexibility. The foldable design is highly portable and unfolds for a seamless, large viewing area. This provides excellent visibility of the display.
[0027] When the electronic device of the present embodiment is not in use, the display unit is bent so that the display surface faces inward. By doing so, scratches and dirt on the display surface can be prevented.
[0028] In the following, a foldable electronic device having a highly flexible region and a less flexible region will be described. The highly flexible area can be folded and bent. This is the bent portion (hereinafter also referred to as the bent portion).
[0029] In the electronic device of this embodiment, the highly flexible area can be folded either inward or outward. It can be bent.
[0030] In this specification, the term "inward bending" refers to bending the display surface of the display unit inward. When the display surface of the display unit is bent outward, it is called "outward bending." The display surface of the device refers to the surface through which the user views the display unit.
[0031] FIG. 1(A) and FIG. 2(A) are plan views of the electronic device when the display unit is unfolded. FIG. 1(B) is a plan view of the electronic device when the display unit is folded. FIG. 1(C) is a plan view of the electronic device when the display unit is folded. FIG. 1B is an example of a side view of an electronic device when the display unit shown in FIG. 2(B) and 2(C) are views of the electronic device shown in FIG. 2(A) as viewed from the direction of the arrow. FIG. 2(D) is a cross-sectional view taken along dashed line AB in FIG. 2(A). This is an example.
[0032] The electronic device shown in FIG. 1A has a highly flexible region E1, a less flexible region E2, and a flexible The flexible region E3 has a low flexibility, and the flexible region and the low flexibility region are each stripe-shaped (striped). In this embodiment, a plurality of highly flexible regions and a plurality of less flexible regions are provided. Although an example is shown in which the regions are parallel to each other, the regions do not have to be arranged in parallel.
[0033] In the electronic device shown in FIG. 1, the highly flexible region E1 is located in a region other than the center of the display unit. That is, the width of the less flexible region E2 is smaller than the width of the less flexible region E3 (E3 In addition, the configuration is not limited to that shown in FIG. 1, and the width of the region E2 having low flexibility may be It may be configured such that the width is larger than that of the less flexible region E3 (E2>E3).
[0034] In the electronic device shown in FIG. 1, the portion included in the highly flexible region E1 of the display unit is a bent portion. The electronic device shown in FIG. 1(A) can be folded at the highly flexible region E1. When the display device is bent, as shown in FIG. 1B, a part of the display unit located in the less flexible area E3 is The other part overlaps with the low flexibility region E2 and is exposed. In other words, when the device is folded, part of the display cannot be seen from the outside, and the other part is visible. Therefore, even when the device is folded, the display is visible. A part of the display can be used as a sub-display. The sub-display shows the clock. It is also possible to provide a function to display incoming e-mails, phone calls, etc.
[0035] By using part of the display as a sub-display, you can set up a separate sub-display. This makes it possible to simplify the manufacturing process and reduce costs.
[0036] In addition, a part of the display unit can be used as a sub-display to obtain some information. Therefore, it is not necessary to use the entire display area. In other words, the power consumption of the display unit can be reduced when the display unit is folded and invisible to the user. By setting the non-display area to a non-display state, the power consumption of the electronic device can be reduced.
[0037] In the case of a display device having a main display and a sub-display independently, From the viewpoint of simplifying the process and reducing costs, the sub-display is On the other hand, in one aspect of the present invention, a part of the main display is used as a sub display. Therefore, when using a sub-display, You can also view the display with the same resolution as on the main display.
[0038] Therefore, in one embodiment of the present invention, a high-definition display device is preferably used for the display portion. By applying one embodiment of the present invention, a main body including this high-definition display device can be Part of the display area can be used as a sub-display. You can get a high-definition sub-display without any hassle.
[0039] The electronic device of this embodiment has a flexible display portion. Various display devices can be used as long as they are suitable for displaying the image. EL elements, organic EL elements, inorganic EL elements), LEDs (white LEDs, red LEDs (color LEDs, green LEDs, blue LEDs, etc.), transistors (transistors that emit light according to the current , electron emission element, liquid crystal element, electronic ink, electrophoretic element, grating light Valve (GLV), Plasma Display (PDP), MEMS (Micro Electro Display element using a digital micromirror device (DMD) ), DMS (Digital Micro Shutter), Interferometric Modulation (IMOD) element, Shutter -type MEMS display element, optical interference type MEMS display element, electrowetting display elements using carbon nanotubes, piezoelectric ceramic displays, etc. In addition to these, contrast can also be achieved by electrical or magnetic effects. The display medium may have a variable brightness, reflectance, transmittance, etc. Examples of display devices that have been used include field emission displays (FED) and SED displays. Flat panel display (SED: Surface conduction Electro In addition, displays using liquid crystal elements are also available. Examples of devices include liquid crystal displays (transmissive liquid crystal displays, semi-transmissive liquid crystal displays, etc.) (a) Reflective LCD, Direct-view LCD, Projection LCD, etc. In addition, there are also other methods using electronic ink, electronically operated liquid powder, or electrophoretic elements. An example of a display device is electronic paper. In order to realize a reflective LCD or a reflective type LCD, part or all of the pixel electrodes must be made of a reflective material. For example, a part or the whole of the pixel electrode may be The material of the reflective electrode may be aluminum, silver, or the like. It is also possible to provide a memory circuit such as an SRAM below the The force can be reduced.
[0040] In particular, display devices using organic EL elements have high flexibility and impact resistance, and can be made thin and lightweight. It is preferable to use a display device using an organic EL element as the display unit. This allows the material to be bent with a radius of curvature between 1 mm and 100 mm, for example. The device can be suitably used in electronic devices that are folded one or more times by bending inwards or outwards.
[0041] In this embodiment, the highly flexible region E1 in the electronic device has at least flexibility. In FIG. 1, the highly flexible region E1 is a display device. The display device 11 has a display area 11a and a The display device 11 may have a non-display area 11b. For example, an organic EL element is used. The use of such a display device is preferred because it allows for a thin and lightweight device in addition to high flexibility and impact resistance. It is.
[0042] The less flexible areas E2 and E3 in the electronic device are at least flexible display The display device has a support, which is less flexible than the display device, stacked thereon.
[0043] The electronic device shown in FIG. 1 and FIGS. 2(A), 2(B), and 2(D) includes a support 15a and a support 15b. The supports 15a and 15b have a lower flexibility than the display device 11. 5a and 15b are spaced apart from each other.
[0044] The support is provided on at least one of the display surface side or the opposite side to the display surface of the display device. 1 and 2, the support 15a is attached to the display surface side of the display device 11, and the display If a support 15b is provided on the opposite side to the surface, the display device can be sandwiched between the pair of supports. This is preferable because it increases the mechanical strength of the less flexible area and makes the electronic device less susceptible to damage.
[0045] In addition, the support 15 shown in FIG. 2(C) is used in place of the supports 15a and 15b. A display device 11 may be disposed between the display device 11 and the display device 5.
[0046] The display device 11 has a support only on either the display surface side or the opposite side to the display surface. This is preferable because it allows the electronic device to be made thinner and lighter. Alternatively, the electronic device may have only the support 15b.
[0047] The highly flexible region E1 and the less flexible regions E2 and E3 are arranged to be more flexible than the display device and the support. It is preferable that the flexible protective layer is laminated on the insulating layer. This improves the flexibility of the electronic device. The region E1 with high elasticity is flexible and has high mechanical strength, so that the electronic device is less likely to be damaged. Even in highly flexible areas, electronic devices can be prevented from being deformed by external forces, etc. The shape can be designed to be less likely to break.
[0048] In FIG. 1, the display device 11 has a surface opposite to the display surface protected by a protective layer 13. There are.
[0049] The thicknesses of the display device 11, the supports 15a and 15b, and the protective layer 13 are, for example, For example, it is preferable that the support is the thickest and the display device is the thinnest. The flexibility of the body 15a and the protective layer 13 can be determined by, for example, the flexibility of the supports 15a and 15b. It is preferable that the display device 11 has a structure in which the resistance is the lowest and the flexibility of the display device 11 is the highest. As a result, the difference in flexibility between the highly flexible region E1 and the less flexible regions E2 and E3 is large. This allows the structure to be reliably folded in the highly flexible region. This makes it possible to suppress bending in the area E2 or E3 with low flexibility, thereby improving the reliability of the electronic device. In addition, the design of the electronic device can be improved even when it is folded. Can be controlled.
[0050] When the display device 11 has protective layers on both the display surface side and the opposite side to the display surface, the pair of protective layers Therefore, since the display device can be sandwiched, the mechanical strength of the electronic device can be increased, and the electronic device can be prevented from being damaged. This is preferable as it makes things less likely to happen.
[0051] For example, as shown in FIG. 2B, in the regions E2 and E3 having low flexibility, a pair of protective layers 13a, 13b are disposed between a pair of supports 15a, 15b, and the display device 11 is supported by a pair of protective It is preferably located between layers 13a, 13b.
[0052] Alternatively, as shown in FIG. 2C, in the less flexible regions E2 and E3, a pair of protective layers 13a, 13b are disposed between the support 15, and the display device 11 is provided with a pair of protective layers 13a, 13b. It is preferable that the ion exchange layer 10 is located between the ion exchange layer 10 and the ion exchange layer 1
[0053] If a protective layer is provided only on the display surface side or on the opposite side of the display surface of the display device, This is preferable because it allows the child device to be thinner or lighter. Alternatively, the electronic device may have only the protective layer 13b.
[0054] In addition, if the protective layer 13a on the display surface side of the display device is a light-shielding film, the external light may be exposed to the non-display area of the display device. This can suppress the light irradiation of the non-display area. This is preferable because it can suppress photodegradation of transistors and the like.
[0055] As shown in FIG. 2(D), the opening of the protective layer 13a provided on the display surface side of the display device 11 is The display area 11a of the display device is overlapped with the non-display area 11a. The protective layer 13a is provided so as to overlap the protective layer 13b. The protective layer 13b is provided so as to overlap the display area 11a and the non-display area 11b. The layer 13b is wider than the protective layer 13a so as to contact the surface of the display device 11 opposite to the display surface. In particular, it is preferable to provide the display device 11 so as to be in contact with the entire surface of the display device 11 opposite to the display surface. This makes it possible to more reliably protect the display device and improve the reliability of the electronic device. do.
[0056] The protective layer and the support can be formed using plastic, metal, alloy, rubber, etc. By using materials such as rubber and plastic, it is possible to obtain a protective layer and support that are lightweight and resistant to damage. For example, a silicone rubber is used as the protective layer, and a stainless steel or aluminum is used as the support. Just use the m.
[0057] It is also preferable to use a highly tough material for the protective layer and the support. This improves impact resistance. For example, organic resins and thin metal materials can be used to realize electronic devices that are highly flexible and resistant to damage. By using these materials, it is possible to realize electronic devices that are lightweight and not easily damaged. For the same reason, it is preferable to use a highly tough material for the substrate constituting the display device. .
[0058] The protective layer and the support positioned on the display surface side are transparent when they do not overlap the display area of the display device. The protective layer or support on the display surface side overlaps at least a part of the display area. In this case, it is preferable to use a material that transmits the display from the display device. The light transmittance of the protective layer and the support positioned on the opposite side to the surface does not matter.
[0059] When bonding any two of the protective layer, support, and display device, various adhesives should be used. For example, two-liquid mixed resins that cure at room temperature, photocurable resins, and heat curable resins can be used. Resins such as curable resins can be used. Also, a sheet-like adhesive can be used. In addition, screws penetrating two or more of the protective layer, support, and display device, and pins that clamp the Each component of the electronic device may be fixed using a clip or the like.
[0060] In the electronic device of the present embodiment, in order to determine whether or not the highly flexible region is folded, For example, a switch, a MEMS pressure sensor, or a pressure sensor. etc. can be used.
[0061] The protective layer 13 may be provided at multiple locations. In this example, two protective layers 13 are provided. In this case, as shown in FIG. By folding the display device 11 in this manner, the display device 11 can be seen. By folding it as shown in (C), the display device 11 can be hidden. In this way, the display device 11 can be protected. This allows multiple functions to be realized.
[0062] In addition, if the display device is completely fixed with a protective layer or support, when bending the electronic device, The display device may be pulled and damaged. Also, when deploying the electronic device, In this case, a force is applied in a direction in which the display device shrinks, and the display device may be damaged. It is preferable that the display device of the child device is not completely fixed by a protective layer or a support. This allows the display device to slide when folding or unfolding the electronic device, providing protection. The position of the display device relative to the protective layer and the support changes. This causes a force to be applied to the display device, which This can prevent the display device from being damaged.
[0063] This embodiment mode can be combined with other embodiment modes as appropriate.
[0064] (Embodiment 2) In this embodiment, an electronic device of one embodiment of the present invention will be described with reference to FIGS.
[0065] The electronic device shown in Fig. 3 is an electronic device provided with a light-transmitting region 17. The region having the optical transparency is formed using a light-transmitting material.
[0066] The electronic device shown in FIG. 3 has a highly flexible region E1, a less flexible region E2, and a less flexible region E3. The electronic device has a region E3 and a region E4 including a light-transmitting region 17, and the electronic device has a highly flexible The region E1 includes the width of the region E2 having low flexibility and the region 17 having light transmission. The sum of the widths of the regions E4 is approximately the same as the width of the less flexible region E3.
[0067] In the electronic device shown in FIG. 3, the portion of the display device 11 included in the highly flexible region E1 is flexible. The electronic device shown in FIG. 3(A) can be formed in the highly flexible region E1. When the display panel is folded, as shown in FIG. 3B, the light-transmitting region 17 and the display region of the display unit are separated. Therefore, the user can see through a part of the display area 11a of the display unit to the transparent Therefore, the electronic device can be seen through the area 17 even when the electronic device is in the folded state. Even if there is a display part visible through the light-transmitting region 17, the part of the display part is a sub-display. It can be used as.
[0068] As shown in FIG. 3B, when the electronic device is folded, the display portion has a light-transmitting property. Therefore, the display surface is protected by a material that prevents it from being exposed. This helps to cushion the display surface from external shocks and prevents scratches and dirt from occurring.
[0069] The light-transmitting region 17 has an opening or a light-transmitting member. In the case of a configuration including a light-transmitting member, the surface of the display unit should not be exposed. In addition, the light-transmitting region 17 may have other functions. For example, the light-transmitting region may have a function such as a touch panel or a keyboard. When the area 17 has a function such as a touch panel or a keyboard, it can be used as a sub-display. It is also possible to display buttons, a keyboard, etc. on part of the functioning display.
[0070] The shape of the light-transmitting region 17 is not particularly limited. However, the supports 15a and 15b may be round or polygonal. The flexible member is formed from a material having light transmittance, and is shaped so that the entire region having low flexibility has light transmittance. It may be possible to do so.
[0071] The light-transmitting region 17 can be arranged in various sizes. For example, FIG. 4 shows an example of an electronic device in which the area of the light-transmitting region 17 is made smaller than that in FIG. 19(A), 19(B), and 19(C). The light-transmitting region 17 is small. Therefore, for example, the operation button 31 and the image are placed in the area E4 including the light-transmitting area 17. A sensor 32, etc. may be placed.
[0072] Alternatively, a configuration shown in one drawing may be combined with a configuration shown in another drawing to form a new configuration. For example, an example of a combination of FIG. 1 and FIG. 3 is shown in FIG. ), as shown in Figures 20(B) and 20(C).
[0073] This embodiment mode can be combined with other embodiment modes as appropriate.
[0074] (Embodiment 3) In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS. In this embodiment mode, an electronic device provided with a plurality of highly flexible regions will be described.
[0075] By providing multiple highly flexible regions, multiple folding is possible. For a display of the same size, it is better to allow multiple folding rather than only one folding. The more you can fold it up, the more compact it will be, making it more portable. In addition, if the electronic device is the same size when folded, it will be more compact. A display that can be folded more times will have a larger display when unfolded. Since the display portion is a display portion, it is possible to obtain an electronic device with excellent visibility.
[0076] 4 to 6 show an example of an electronic device having multiple highly flexible regions. The electronic device shown in FIG. 4(A) is an example in which four highly flexible regions E1 are provided. As shown in FIG. 1, the flexible region E1 is folded into a folding screen shape. At this time, as shown in FIG. 4(B), only a part of the display unit can be seen by the user. In the electronic device shown in FIG. 4A, the width of the less flexible region E2 is approximately Since the width is almost the same, by folding it, it can be made almost equal to the width of E2. , it can be made approximately one-fifth the width of its unfolded state.
[0077] In addition, in FIG. 5, an example in which three highly flexible regions E1 are provided is shown. By bending the highly flexible region E1, the folding screen is formed as shown in FIG. As a result, in the state shown in FIG. 5(B), the transparent member has light-transmitting properties. A part of the display unit can be seen through the area 17 .
[0078] The number of highly flexible regions is not particularly limited, and may be two, or may be five or more.
[0079] In addition, although an example of folding into a folding screen is shown in FIG. 4 and FIG. 5, the folding method may be changed to a folding screen. The folding method is not limited to the above. Various methods may be used for folding.
[0080] The number of times the flexible region E1 is folded is not particularly limited. In the container, it is not necessary to fold the electronic device using all of the highly flexible area E1. For example, the electronic device shown in FIG. 6A has seven highly flexible regions E1. (B) is an example of bending once in an arbitrary highly flexible region E1, and FIG. FIG. 6(B) is an example in which the display device 11 is folded once to hide it, and FIG. 6(C) is an example in which the display device 11 is folded four times. Here is an example.
[0081] By providing a plurality of highly flexible regions E1 in the electronic device, any highly flexible region E In the above, the electronic device can be folded. It is possible to make the electronic device into a desired shape. Also, the size of the folded state is In other words, you can adjust the size and shape of the bag or pocket you want to store it in. This makes it possible to fold electronic devices to fit the shape.
[0082] By providing a plurality of highly flexible regions E1, when the electronic device is in a folded state, The size of the display part exposed to the outside or the position where the display part is exposed can be adjusted. Therefore, it is possible to set the sub-display to a size desired by the user. By providing multiple highly flexible areas E1, the sub-displays can be arranged in a desired manner. For example, it is possible to select a sub-display that is easy to use for right-handed and left-handed people. Although the arrangement is different, by providing multiple highly flexible areas E1, it is easy to use for right-handed people. We can also meet requests for layouts that are easy to use for left-handed people and for easy placement.
[0083] By providing a plurality of highly flexible regions E1, the bending location can be changed. This allows damage caused by bending to be dispersed, improving the reliability of electronic devices. It is possible to do so.
[0084] 4 to 6, the widths of the multiple less flexible regions are approximately the same (approximately uniform). However, the widths of the less flexible regions may be different as shown in FIG. In addition, although an example without a light-transmitting region is shown in FIG. 6, a light-transmitting region may be provided. This is also fine.
[0085] This embodiment mode can be combined with other embodiment modes as appropriate.
[0086] (Embodiment 4) In this embodiment, an electronic device according to one embodiment of the present invention will be described with reference to FIGS. In the embodiment, an electronic device having a wide highly flexible region will be described. By providing the flexible portion widely, it is possible to fold the flexible portion at a desired position in the flexible region. It is possible.
[0087] FIG. 7 shows an electronic device in which the width of the highly flexible region E1 is made wider than the width of the less flexible region E2. Indicates the vessel.
[0088] FIG. 7(A) is a plan view of the electronic device in an unfolded state, and FIG. 7(B) is a plan view of the electronic device in an unfolded state. FIG. 7(C) shows the state where the package is folded several times, but FIG. 7(B) shows the state where the package is folded several times. FIG. 7(D) is a plan view of the state where the number of folds is less than that shown in FIG. FIG.
[0089] In this way, the electronic device shown in FIG. 7 has a wide highly flexible region E1. It can be folded at any position of E1. Therefore, the folding position and folding angle can be adjusted. You can freely set the number of times to fold. You can freely set the folding position and the number of times to fold. By doing so, the size and arrangement of the part of the display that is visible to the user in the folded state can be changed. You can freely set the shape and size of the folded state. This can be done.
[0090] Furthermore, by providing a wide highly flexible region E1, the bending location can be changed. This can disperse damage to electronic devices caused by bending them. This makes it possible to improve the reliability of electronic devices.
[0091] Although an example in which no light-transmitting region is provided is shown in FIG. 7, a light-transmitting region may be provided. stomach.
[0092] This embodiment mode can be combined with other embodiment modes as appropriate.
[0093] (Embodiment 5) In this embodiment, an electronic device according to one embodiment of the present invention will be described with reference to FIGS. In the first to fourth embodiments, the display unit is folded. Next, a method for winding up the display unit will be described.
[0094] The electronic device described in this embodiment has a display portion and a winding portion. The winding section rolls up a part of the display section (the first region 11c). , reel) and has the function of storage.
[0095] The electronic device shown in FIG. 8 has a housing 10, a display device 11, a winding section 16, and a fixing section 19. Furthermore, an operation button 21 may be provided. The display device 11 has a first area 11c and a second area 11d. The second region 11d has a first region 11d. A member 20 is provided at an end of the second region 11d. A member 18 may be provided at the boundary between the first region 11c and the second region 11d.
[0096] FIG. 8(A) is a perspective view of the display unit in an expanded state, and FIG. 8(B) is a perspective view of a part of the display unit (first FIG. 8(C) is a perspective view of the second area 11d of the display unit when the first area 11c of the display unit is rolled up. 1 is a side view of the state in which the cable is wrapped around the outside of the housing.
[0097] When storing the display unit, as shown in FIG. 8(B), the display unit is wound around the winding portion 16. A part of the film (first region 11c) is wound up and stored. A part of the film (second region 11) is not wound up and stored. 8C, the wire d) is wound around the outside of the housing 10 and fixed with a fixing portion 19. Even when the display unit is stored and made highly portable, the display unit located on the outside of the housing 10 A part of the display (second area 11d) is visible to the user. It can be used.
[0098] As shown in FIG. 8, the boundary between the first region 11c and the second region 11d of the display section is A member 18 may be provided. The member 18 may be wound around the winding portion 16 in the second region 11d. It is not necessary to provide the member 18. In this case, there is no boundary between the first region 11c and the second region 11d, so that the display has excellent visibility. This makes it possible to provide a display unit in which the sense of separation of the display is suppressed.
[0099] As shown in FIG. 8, the fixing portion 19 is wound around the outside of the housing 10 in the second region 11d. When the second region 11d is inserted, the second region 11d is fixed in place. The length of the fixing part 19 can be adjusted according to the size of the case. For example, the electronic device shown in this embodiment may be attached to a pocket or the like. The fixing portion 19 may have a function of fixing the same to the substrate 14.
[0100] It is preferable to provide the member 20 at the end of the display section (the end of the second region 11d). By having this, fixing by the fixing portion 19 can be facilitated.
[0101] As shown in this embodiment, by providing a winding portion, the display portion is bent. In addition, it is possible to prevent the display from being bent at an acute angle. This provides the effect of improving the reliability of the display unit.
[0102] This embodiment mode can be combined with other embodiment modes as appropriate.
[0103] (Embodiment 6) In this embodiment, a display panel that can be used as a display portion of a display device according to one embodiment of the present invention will be described. In this embodiment, a flexible display panel using an organic EL element is used as an example of a display panel. However, one embodiment of the present invention is not limited to this.
[0104] <Configuration Example 1-1> FIG. 9(A) shows a plan view of the light emitting device, and FIG. 9(B) shows a cross-sectional view of the light emitting device along the dashed line X1-Y1 in FIG. The light-emitting device shown in FIG. 9(B) is a top-emitting device using a color-coded method. It is a light-emitting device of the type.
[0105] The light emitting device shown in FIG. 9A includes a light emitting portion 491, a driving circuit portion 493, and an FPC (Flexib The light emitting unit 491 and the driving circuit unit The organic EL element and the transistor included in 493 are supported on the flexible substrate 420, the flexible substrate 428, and sealed by adhesive layer 407.
[0106] The light emitting device shown in FIG. 9(B) includes a flexible substrate 420, an adhesive layer 422, an insulating layer 424, a transistor, and a light emitting device. A resistor 455, an insulating layer 463, an insulating layer 465, an insulating layer 405, an organic EL element 450 (lower electrode 401, EL layer 402, and upper electrode 403), adhesive layer 407, flexible substrate 428, and a conductive layer 457. The flexible substrate 428, the adhesive layer 407, and the upper electrode 403 are Transmits visible light.
[0107] In the light-emitting portion 491 of the light-emitting device shown in FIG. 9B, A transistor 455 and an organic EL element 450 are provided over a flexible substrate 420. The organic EL element 450 includes a lower electrode 401 on an insulating layer 465 and an EL layer 402 on the lower electrode 401. 402 and an upper electrode 403 on the EL layer 402. The lower electrode 401 is a transistor The lower electrode 401 is electrically connected to the source electrode or drain electrode of the lower electrode 455. The end of the lower electrode 401 is covered with an insulating layer 405.
[0108] The driver circuit portion 493 includes a plurality of transistors. 1 shows one of the transistors included in the semiconductor memory device.
[0109] The conductive layer 457 transmits signals (video signals, clock signals, start signals, etc.) from the outside to the driving circuit section 493. The external input terminal is electrically connected to the external input terminal that transmits a signal (such as a start signal or a reset signal) or a potential. Here, an example is shown in which an FPC495 is provided as an external input terminal.
[0110] In order to prevent an increase in the number of processes, the conductive layer 457 is formed of the same material as the electrodes and wiring used in the light-emitting section and the driving circuit section. It is preferable to form the conductive layer 457 by the same material and process. This example shows a case where the source electrode and drain electrode of the MOSFET are fabricated using the same material and process as those of the MOSFET.
[0111] The insulating layer 463 has an effect of suppressing diffusion of impurities into the semiconductor that constitutes the transistor. The insulating layer 465 also has a planarizing function to reduce surface irregularities caused by the transistor. It is preferable to select an insulating film having such a structure.
[0112] <Configuration Example 1-2> FIG. 9(A) shows a plan view of the light emitting device, and FIG. 9(C) shows a cross-sectional view of the light emitting device along the dashed line X1-Y1 in FIG. The light emitting device shown in FIG. 9C is a bottom emitter using a color filter method. It is a cushion-type light-emitting device.
[0113] The light emitting device shown in FIG. 9C includes a flexible substrate 420, an adhesive layer 422, an insulating layer 424, a transistor, and a light emitting device. A resistor 454, a transistor 455, an insulating layer 463, a coloring layer 432, an insulating layer 465, and a conductive layer 435, insulating layer 467, insulating layer 405, organic EL element 450 (lower electrode 401, EL layer 402, and upper electrode 403), adhesive layer 407, flexible substrate 428, and conductive layer 457. A flexible substrate 420, an adhesive layer 422, an insulating layer 424, an insulating layer 463, and an insulating layer 465 , the insulating layer 467, and the lower electrode 401 are transparent to visible light.
[0114] In the light-emitting portion 491 of the light-emitting device shown in FIG. A switching transistor 454 and a current control transistor are formed on the flexible substrate 420. The organic EL element 450 is provided between the insulating layer 46 and the insulating layer 455. 7, a lower electrode 401 on the lower electrode 401, an EL layer 402 on the EL layer 402, and an upper electrode The lower electrode 401 is connected to the source of the transistor 455 through a conductive layer 435. The end of the lower electrode 401 is electrically connected to the insulating layer 40. The upper electrode 403 is preferably reflective to visible light. has a colored layer 432 on an insulating layer 463 overlapping with an organic EL element 450 .
[0115] The driver circuit portion 493 includes a plurality of transistors. Of the transistors included, two are shown.
[0116] The conductive layer 457 is connected to an external input terminal for transmitting a signal or potential from the outside to the driver circuit portion 493. Here, an example is shown in which an FPC495 is provided as the external input terminal. In this example, the conductive layer 457 is formed using the same material and process as the conductive layer 435. Shows.
[0117] The insulating layer 463 has an effect of suppressing diffusion of impurities into the semiconductor that constitutes the transistor. In addition, the insulating layers 465 and 467 reduce surface unevenness caused by transistors and wirings. In order to achieve this, it is preferable to select an insulating film having a planarizing function.
[0118] <Configuration Example 1-3> FIG. 9A shows a plan view of the light emitting device, and FIG. 10A shows a dashed line X1-Y in FIG. The cross-sectional view of FIG. 1 is shown. The light-emitting device shown in FIG. 10(A) is a top view using a color filter method. This is an emission type light emitting device.
[0119] The light emitting device shown in FIG. 10(A) includes a flexible substrate 420, an adhesive layer 422, an insulating layer 424, a transistor, and a light emitting device. Transistor 455, insulating layer 463, insulating layer 465, insulating layer 405, insulating layer 496, organic EL The element 450 (the lower electrode 401, the EL layer 402, and the upper electrode 403), the adhesive layer 407, the shielding layer 408, and the like are Optical layer 431, color layer 432, overcoat 453, insulating layer 226, adhesive layer 426, flexible The flexible substrate 428, the adhesive layer 426, the insulating layer 2, and the conductive layer 457 are disposed on the substrate 428. 26, the adhesive layer 407, and the top electrode 403 are transparent to visible light.
[0120] In the light-emitting portion 491 of the light-emitting device shown in FIG. 10(A), A transistor 455 and an organic EL element 450 are provided over a flexible substrate 420 . The organic EL element 450 includes a lower electrode 401 on an insulating layer 465 and an EL layer 402 on the lower electrode 401. The lower electrode 401 is a transistor. The end of the lower electrode 401 is electrically connected to the source electrode or drain electrode of the lower electrode 455. The insulating layer 496 is provided on the insulating layer 405. By providing 96, the distance between the flexible substrate 420 and the flexible substrate 428 can be adjusted. The lower electrode 401 preferably reflects visible light. The organic EL element 450 is insulated from the colored layer 432 through an adhesive layer 407. It has a light blocking layer 431 overlapping layer 405 .
[0121] The driver circuit portion 493 includes a plurality of transistors. 1 shows one of the transistors included in the semiconductor memory device.
[0122] The conductive layer 457 is connected to an external input terminal for transmitting a signal or potential from the outside to the driver circuit portion 493. Here, an example is shown in which an FPC495 is provided as the external input terminal. Here, the conductive layer 457 is used as a source electrode and a drain electrode of the transistor 455. This is an example of fabrication using the same material and the same process. 226, the overcoat 453, the adhesive layer 407, the insulating layer 465, and the insulating layer 463. The connector 497 is connected to the conductive layer 457 through an opening formed in the FPC 495. The FPC 495 and the conductive layer 457 are electrically connected via the connector 497.
[0123] <Configuration Example 1-4> FIG. 11A shows a plan view of the light emitting device. A cross-sectional view of the light-emitting device is shown in FIG. 11B. show.
[0124] The light emitting device shown in FIG. 10B and FIG. 11B includes an element layer 1301, an adhesive layer 1305, a flexible The element layer 1301 includes a flexible substrate 1401, an adhesive layer 1403, an insulating layer 1404, and a An edge layer 1405, a plurality of transistors, a conductive layer 1357, an insulating layer 1407, and an insulating layer 1409. , a plurality of light emitting elements, an insulating layer 1411, an adhesive layer 1413, an overcoat 1461, and a light shielding layer 1457 and an insulating layer 1455.
[0125] FIG. 11B shows an example in which a colored layer 1459 is provided so as to overlap with each light-emitting element. A colored layer 1459 is provided at a position overlapping the element 1430, and a colored layer 1459 is provided at a position overlapping the insulating layer 1411. A light-shielding layer 1457 is provided on the colored layer 1459. The colored layer 1459 and the light-shielding layer 1457 are overcoated. The light emitting element 1430 is covered with an overcoat 1461. An adhesive layer 1 is provided between the light emitting element 1430 and the overcoat 1461. It is to be noted that a colored layer may be provided so as to overlap all the light emitting elements. Alternatively, as shown in FIG. 10B, a colored layer may be provided so as to overlap a part of the light-emitting element. For example, if one pixel is composed of four sub-pixels, red, blue, green, and white, In the subpixels of the second color, the colored layer does not need to be provided. This reduces the amount of light absorbed by the colored layer. Since the power consumption of the light emitting device can be reduced, the power consumption of the light emitting device can be reduced. It is also possible to fabricate a light-emitting element that emits a different color for each sub-pixel. In this case, the colored layer may not be provided.
[0126] The conductive layer 1357 is electrically connected to the FPC 1308 via the connector 1415. As shown in (B), a conductive layer 1357 is provided between the flexible substrate 1401 and the flexible substrate 1303. If provided, the connector 14 is inserted into an opening in the flexible substrate 1303, the adhesive layer 1305, etc. As shown in FIG. 10B, a flexible substrate 1303 and a conductive layer 135 When the insulating layer 1407 and the insulating layer 1409 on the flexible substrate 1401 are not overlapped, Connector 1415 may be placed in the opening of the beam.
[0127] The light-emitting element 1430 includes a lower electrode 1431, an EL layer 1433, and an upper electrode 1435. The lower electrode 1431 is electrically connected to a source electrode or a drain electrode of the transistor 1440. The end of the lower electrode 1431 is covered with an insulating layer 1411. The upper electrode 1435 has a light-transmitting property, and the EL layer 143 It transmits the light emitted by 3.
[0128] The light emitting device has a plurality of transistors in the light extraction section 1304 and the driving circuit section 1306. The transistor 1440 is provided over an insulating layer 1405. The flexible substrate 1401 is bonded to the substrate 1402 by an adhesive layer 1403. 5 and the flexible substrate 1303 are bonded together by an adhesive layer 1305. When an insulating film having a high gas barrier property is used for the insulating layer 1455, the light emitting element 1430 and the transistor This can prevent impurities such as moisture and oxygen from entering the sintered body 1440, thereby improving the reliability of the light-emitting device. This is preferable because it reduces the
[0129] In the configuration example 1-4, the insulating layer 1405, the transistor 1440, and the like are formed on a heat-resistant substrate. The light emitting element 1430 is manufactured, the manufacturing substrate is peeled off, and the flexible substrate 1 is attached using the adhesive layer 1403. By transferring an insulating layer 1405, a transistor 1440, and a light-emitting element 1430 onto the In the configuration example 1-4, a light-emitting device that can be fabricated is shown. An insulating layer 1455, a colored layer 1459 and a light-shielding layer 1457 are formed, and the formed substrate is peeled off and bonded. An insulating layer 1455, a coloring layer 1459 and a light-shielding layer are formed on a flexible substrate 1303 using a bonding layer 1305. 14 shows a light-emitting device that can be fabricated by transposing layer 1457.
[0130] When using a material with high moisture permeability and low heat resistance (such as resin) for the substrate, Since it is not possible to apply heat, there are limitations on the conditions for fabricating transistors and insulating films on the substrate. In a method for manufacturing a light-emitting device according to one embodiment of the present invention, a transistor is formed on a formation substrate having high heat resistance. This allows the production of highly reliable transistors and insulating materials with sufficient gas barrier properties. Then, by transferring them to a flexible substrate, a highly reliable Thus, in one embodiment of the present invention, a light-emitting device that is lightweight or thin and A highly reliable light emitting device can be realized. The details of the manufacturing method will be described later.
[0131] The flexible substrate 1303 and the flexible substrate 1401 are each made of a highly tough material. This makes it possible to realize a display device that is highly impact resistant and difficult to break. For example, the flexible substrate 1303 is an organic resin substrate, and the flexible substrate 1401 is a thin metal substrate. By using a substrate made of a metal or alloy material, the substrate is lighter and more durable than a glass substrate. This makes it possible to realize a light emitting device that is less susceptible to damage.
[0132] Metallic and alloy materials have high thermal conductivity and can easily conduct heat across the entire substrate, making it possible to This is preferable because it is possible to suppress a local temperature rise in the substrate. The thickness of the film is preferably 10 μm or more and 200 μm or less, and more preferably 20 μm or more and 50 μm or less. is more preferable.
[0133] In addition, if a material with high thermal emissivity is used for the flexible substrate 1401, the surface temperature of the light emitting device becomes high. This can prevent the light emitting device from being damaged or the reliability from being reduced. 1401 is a metal substrate and a layer with high thermal emissivity (e.g., a metal oxide or ceramic material). The laminated structure may be a laminated structure of the above-mentioned materials.
[0134] <Examples of materials> Next, materials that can be used in the light-emitting device will be described. The explanation of the configuration will be omitted.
[0135] The element layer 1301 includes at least a light-emitting element. The category includes elements whose luminance is controlled by current or voltage. For example, light-emitting diodes (LEDs), organic EL elements, inorganic EL elements, etc. can be done.
[0136] The element layer 1301 further includes transistors for driving light-emitting elements, touch sensors, etc. It may have.
[0137] The structure of the transistor in the light-emitting device is not particularly limited. For example, a staggered transistor The transistor may be a top gate type or an inverted stagger type. The semiconductor used in the transistor may have any of the following transistor structures: The material of the substrate is not particularly limited, and may be, for example, silicon, germanium, oxide semiconductor, etc. good.
[0138] The state of the semiconductor material used in the transistor is not particularly limited, and may be an amorphous semiconductor, a crystalline semiconductor, or the like. A semiconductor having a crystal structure (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystal region in a part of the semiconductor In particular, when a semiconductor having crystallinity is used, the This is preferable because it is possible to suppress deterioration of the resistor characteristics.
[0139] Here, it is preferable to use a polycrystalline semiconductor for the transistor. For example, It is preferable to use polycrystalline silicon, etc. Polycrystalline silicon is formed at a lower temperature than single crystal silicon. It has high field effect mobility and high reliability compared to amorphous silicon. By applying such a polycrystalline semiconductor to a pixel, the aperture ratio of the pixel can be improved. Even when the pixels are extremely fine, the gate driver circuit and the source driver circuit It is possible to form the display on the same substrate as the pixels, which reduces the number of components that make up the electronic device. This can be done.
[0140] Alternatively, it is preferable to use an oxide semiconductor for the transistor. It is preferable to use an oxide semiconductor having a larger band gap than silicon. By using semiconductor materials with a wide band gap and low carrier density, This is preferable because it can reduce the current in the OFF state.
[0141] For example, the oxide semiconductor contains at least indium (In) or zinc (Zn). More preferably, In-M-Zn oxide (wherein M is Al, Ti, Ga, Metals such as Ge, Y, Zr, Sn, La, Ce or Hf are included.
[0142] For example, oxide semiconductors include indium oxide, tin oxide, zinc oxide, and In-Zn oxide. substances, Sn-Zn oxides, Al-Zn oxides, Zn-Mg oxides, Sn-Mg oxides In-Mg oxide, In-Ga oxide, In-Ga-Zn oxide (IGZO and (also written as In-Al-Zn oxide, In-Sn-Zn oxide, Sn-Ga-Z n-based oxides, Al-Ga-Zn-based oxides, Sn-Al-Zn-based oxides, In-Hf-Zn In-Zr-Zn oxide, In-Ti-Zn oxide, In-Sc-Zn oxide Oxide, In-Y-Zn oxide, In-La-Zn oxide, In-Ce-Zn oxide In-Pr-Zn oxides, In-Nd-Zn oxides, In-Sm-Zn oxides , In-Eu-Zn oxide, In-Gd-Zn oxide, In-Tb-Zn oxide, In-Dy-Zn oxide, In-Ho-Zn oxide, In-Er-Zn oxide, I n-Tm-Zn oxide, In-Yb-Zn oxide, In-Lu-Zn oxide, In -Sn-Ga-Zn oxide, In-Hf-Ga-Zn oxide, In-Al-Ga-Z n-based oxides, In-Sn-Al-Zn-based oxides, In-Sn-Hf-Zn-based oxides, In -Hf-Al-Zn based oxides can be used.
[0143] Here, the In-Ga-Zn oxide is an oxide having In, Ga, and Zn as the main components. The ratio of In, Ga, and Zn does not matter. Metal elements may also be included.
[0144] The oxide semiconductor film is classified into a single-crystal oxide semiconductor film and a non-single-crystal oxide semiconductor film. The non-single-crystal oxide semiconductor film is called CAAC-OS (C Axis Alignment-type) d Crystalline Oxide Semiconductor) membrane, polycrystalline acid The term CAA refers to a semiconductor film made of a crystalline oxide, a microcrystalline oxide semiconductor, an amorphous oxide semiconductor, etc. The C-OS film is one of oxide semiconductor films having a plurality of crystal parts aligned along the c-axis. CAAC-OS membrane is CANC(C-Axis Alingned nanocrysta) The oxide semiconductor film may also be referred to as an oxide semiconductor film having a conductivity type (Is).
[0145] In particular, the semiconductor layer has a plurality of crystal parts, and the c-axes of the crystal parts are aligned along the surface on which the semiconductor layer is formed, Or, the oxide is oriented perpendicular to the upper surface of the semiconductor layer and has no grain boundaries between adjacent crystal portions. It is preferable to use an oxide semiconductor film. Since such an oxide semiconductor does not have a crystal grain boundary, When a flexible device formed by applying one embodiment of the present invention is bent, stress is generated. Therefore, the occurrence of cracks in the oxide semiconductor film is suppressed. In addition, such oxide semiconductors can be suitably used in devices such as display devices that are used in a curved state. can be done.
[0146] In addition, by using such materials for the semiconductor layer, fluctuations in electrical characteristics are suppressed, resulting in high reliability. This makes it possible to realize highly reliable transistors.
[0147] In addition, due to its low off-state current, the charge stored in the capacitance can be released through the transistor for a long period of time. By applying such transistors to pixels, It is also possible to stop the driving circuit while maintaining the brightness of the image displayed in the display area. As a result, it is possible to realize electronic devices with extremely reduced power consumption.
[0148] The light-emitting element of the light-emitting device has a pair of electrodes (a lower electrode 1431 and an upper electrode 1435). The light emitting device has an EL layer 1433 provided between the pair of electrodes. One of the pair of electrodes is an anode. one functions as a cathode and the other functions as a cathode.
[0149] The light-emitting element is available in top emission structure, bottom emission structure, and dual emission structure. The electrode on the light extraction side is made of a conductive film that transmits visible light. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. I wish.
[0150] The conductive film that transmits visible light is, for example, indium oxide, indium tin oxide (ITO). Indium Tin Oxide, Indium Zinc Oxide, Zinc Oxide, Gallium Doped It can be formed using zinc oxide, etc. Also, gold, silver, platinum, magnesium, Nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or Metallic materials such as titanium, alloys containing these metallic materials, or nitrides of these metallic materials (e.g. For example, titanium nitride or the like can be used by forming it thin enough to have light transmitting properties. A laminated film of the above materials can also be used as the conductive layer. For example, silver and magnesium It is preferable to use a laminated film of an alloy of this material and ITO, since the electrical conductivity can be increased. Graphene and the like may also be used.
[0151] The conductive film that reflects visible light is made of, for example, aluminum, gold, platinum, silver, nickel, tungsten, etc. Metallic materials such as zinc, chromium, molybdenum, iron, cobalt, copper, or palladium; An alloy containing these metal materials can be used. In addition, aluminum and titanium may be added. Aluminum alloys such as aluminum-nickel alloys, aluminum-neodymium alloys, etc. Alloys containing palladium (aluminum alloys), silver-copper alloys, silver-palladium-copper alloys, silver The electrode can be formed using an alloy containing silver, such as an alloy of silver and magnesium. Gold is preferred because of its high heat resistance. By laminating the oxide film, the oxidation of the aluminum alloy film can be suppressed. Examples of materials for the metal oxide film include titanium and titanium oxide. A conductive film that transmits visible light and a film made of a metal material may be laminated. For example, a film made of silver and ITO may be laminated. A laminated film, a laminated film of an alloy of silver and magnesium and ITO, etc. can be used.
[0152] The electrodes may be formed by vapor deposition or sputtering. Formed using a discharge method such as the jet method, a printing method such as the screen printing method, or a plating method. It is possible.
[0153] When a voltage higher than the threshold voltage of the light-emitting element is applied between the lower electrode and the upper electrode, the EL layer Holes are injected from the anode side, and electrons are injected from the cathode side. The injected electrons and holes are called EL The electrons recombine in the layer, causing the luminescent material contained in the EL layer to emit light.
[0154] The EL layer has at least a light-emitting layer. The EL layer has a layer having a high hole injection property other than the light-emitting layer. materials with high hole transporting properties, hole blocking materials, materials with high electron transporting properties, and electron injection properties or bipolar substances (substances with high electron transport and hole transport properties), etc. It may further comprise a layer.
[0155] The EL layer can be made of either low molecular weight compounds or high molecular weight compounds. Each of the layers constituting the EL layer 1433 may be formed by deposition (vacuum deposition). The conductive layer can be formed by a method such as a transfer method, a printing method, an ink-jet method, or a coating method.
[0156] The light emitting element is preferably provided between a pair of insulating films having high gas barrier properties. This makes it possible to prevent impurities such as water from entering the light emitting element, and thus prevents a decrease in the reliability of the light emitting device. can be suppressed.
[0157] Insulating films with high gas barrier properties include films made of nitrogen and silicon, such as silicon nitride films and silicon oxynitride films. Examples of the film include a film containing nitrogen and aluminum, such as an aluminum nitride film. Alternatively, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may be used.
[0158] For example, the water vapor permeability of an insulating film with high gas barrier properties is 1×10 -5 [g / m 2 ·day ] or less, preferably 1 × 10 -6 [g / m 2 ·day] or less, preferably 1×10 - 7 [g / m 2 ·day] or less, and more preferably 1×10 -8 [g / m 2 ·day] or less Let us assume that.
[0159] For the flexible substrate, a material having flexibility is used. For example, an organic resin or a material having a certain degree of flexibility is used. Furthermore, the substrate on the side from which light is extracted in the light-emitting device can be used. The plate is made of a material that transmits visible light. In the case where the flexible substrate does not need to transmit visible light, Alternatively, a metal substrate or the like can be used.
[0160] Since organic resin has a smaller specific gravity than glass, using organic resin as a flexible substrate This is preferable because it allows the light-emitting device to be made lighter than when glass is used.
[0161] As a material having flexibility and light transmission, for example, polyethylene terephthalate (PET) ), polyester resins such as polyethylene naphthalate (PEN), polyacrylonitrile Resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin , polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, poly Examples include styrene resin, polyamide-imide resin, and polyvinyl chloride resin. It is preferable to use a material with a low modulus of elasticity, for example, polyamide-imide resin, polyimide resin, etc. The resin, PET, etc. can be preferably used. In addition, a substrate in which a fiber body is impregnated with a resin (prepreg) can be used. The use of substrates with a reduced thermal expansion coefficient by mixing inorganic fillers with organic resins is also It is also possible.
[0162] When the fibrous body is contained in a material having flexibility and light transmission, the fibrous body is an organic compound or High-strength fibers made of inorganic compounds are used. Specifically, high-strength fibers have a tensile modulus or Young's modulus Representative examples are polyvinyl alcohol fibers and polyester fibers. fiber, polyamide fiber, polyethylene fiber, aramid fiber, polyparaphenylene Examples of the fiber include benzobisoxazole fiber, glass fiber, and carbon fiber. Examples of the glass fibers include those using E glass, S glass, D glass, Q glass, etc. These are used in the form of woven or nonwoven fabric, and the fibers are impregnated with resin and the resin is hardened to form a structure. A structure made of a fiber body and a resin may be used as the flexible substrate. The use of such a material is preferable because it improves reliability against breakage due to bending or localized pressure.
[0163] In order to improve the light extraction efficiency, it is preferable that the refractive index of the flexible and light-transmitting material is high. For example, by dispersing an inorganic filler having a high refractive index in an organic resin, the organic resin This allows the realization of a substrate with a higher refractive index than a substrate made of only SiO2. The use of such an inorganic filler is preferable since it does not impair optical transparency.
[0164] The thickness of the metal substrate is preferably 10 μm or more and 200 μm or less in order to obtain flexibility and bendability. The thickness is preferably 20 μm or more and 50 μm or less. Since the metal substrate has high thermal conductivity, The heat generated by the light emission of the light emitting element can be effectively dissipated.
[0165] The material constituting the metal substrate is not particularly limited, but examples thereof include aluminum, copper, and nickel. It is preferable to use metal alloys such as aluminum alloys and stainless steel. This can be done.
[0166] As for the flexible substrate, the layer using the above material is used as a hard cover to protect the surface of the device from scratches. A layer of a material capable of dispersing pressure (e.g., a layer of silicon nitride) or a layer of a material capable of dispersing pressure (e.g., a layer of aramid) In addition, the functional element (particularly the functional element 10) may be laminated with a layer of a functional material such as a resin layer. In order to prevent the deterioration of the lifespan of the organic EL element, the insulating film with low water permeability described below is provided. It's fine.
[0167] The flexible substrate may be used by laminating a plurality of layers. This improves the barrier properties against water and oxygen, making it possible to provide a highly reliable light-emitting device. do.
[0168] For example, a flexible laminate in which a glass layer, an adhesive layer, and an organic resin layer are laminated from the side closest to the organic EL element is The thickness of the glass layer is 20 μm or more and 200 μm or less. The thickness is preferably 25 μm or more and 100 μm or less. A glass layer having such a thickness is resistant to water and oxygen. The organic resin layer can have a high barrier property against water and flexibility at the same time. The thickness is set to 10 μm or more and 200 μm or less, and preferably 20 μm or more and 50 μm or less. By providing the organic resin layer on the outer side of the glass layer, breakage or cracks in the glass layer are suppressed. The composite material of such glass material and organic resin can improve the mechanical strength. By applying this to the substrate, it is possible to create a highly reliable and flexible light-emitting device. can.
[0169] The adhesive layer may be a photo-curable adhesive such as an ultraviolet curable adhesive, a reactive curable adhesive, a heat curable adhesive, or an antibacterial adhesive. Various curing adhesives such as epoxy adhesives can be used. Resin, acrylic resin, silicone resin, phenol resin, polyimide resin, imide resin , PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA ( Ethylene vinyl acetate resins, etc. In particular, epoxy resins, etc., have low moisture permeability. The material is preferably a two-part mixed resin. Also, an adhesive sheet or the like may be used. Good too.
[0170] The resin may contain a desiccant. For example, an oxide of an alkaline earth metal (oxide Use substances that adsorb moisture by chemical adsorption, such as calcium oxide or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb moisture by physical adsorption. If a desiccant is included, impurities such as moisture may penetrate into the functional elements. This is preferable because it can suppress the intrusion of foreign matter and improve the reliability of the light emitting device.
[0171] In addition, by mixing a filler having a high refractive index or a light scattering material into the resin, it is possible to improve the light transmission efficiency. For example, titanium oxide, barium oxide, and zeolite can be used. For example, olyte, zirconium, etc. can be used.
[0172] The insulating layer 424, the insulating layer 226, the insulating layer 1405, and the insulating layer 1455 are made of an inorganic insulating material. In particular, when the insulating film having a high gas barrier property is used, a highly reliable light emission can be achieved. In addition, a high gas barrier property is preferably provided between the adhesive layer and the upper electrode. An insulating film may be formed.
[0173] The insulating layer 463 and the insulating layer 1407 prevent impurities from diffusing into the semiconductor that constitutes the transistor. The insulating layer 463 and the insulating layer 1407 may be formed of a silicon oxide film, a nitride film, or the like. For example, an inorganic insulating film such as a silicon oxide film or an aluminum oxide film can be used.
[0174] The insulating layer 465, the insulating layer 467, and the insulating layer 1409 are each formed of a transistor-induced insulating material. In order to reduce the surface irregularities, it is preferable to select an insulating film having a planarizing function. For example, organic materials such as polyimide, acrylic, and benzocyclobutene resins can be used. In addition to the above organic materials, low-dielectric materials (low-k materials) can also be used. Incidentally, a plurality of insulating films or inorganic insulating films made of these materials may be laminated.
[0175] The insulating layer 405 and the insulating layer 1411 are provided to cover the ends of the lower electrode. 5. The insulating layer 496 and the insulating layer 1411 are made of resin or inorganic insulating material. Examples of resins include polyimide resins, polyamide resins, acrylic resins, and silicone resins. The insulating material may be a fluororesin, an epoxy resin, a phenol resin, or the like. Since the layer 405, the insulating layer 496, and the insulating layer 1411 are easily fabricated, a negative photosensitive resin is used. Alternatively, it is preferable to use a positive photosensitive resin.
[0176] The method for forming the insulating layer 405, the insulating layer 496, and the insulating layer 1411 is not particularly limited. Trisography, sputtering, deposition, droplet ejection (inkjet, etc.), printing ( Screen printing, offset printing, etc.) may be used.
[0177] The conductive layers of the transistor electrodes and wiring are made of molybdenum, titanium, chromium, and tin, respectively. Metallic materials such as talc, tungsten, aluminum, copper, neodymium, scandium, etc. The insulating layer can be formed by using an alloy material containing these elements in a single layer or a multilayer structure. Each of the conductive layers may be formed using a conductive metal oxide. The substances include indium oxide (In2O3, etc.), tin oxide (SnO2, etc.), zinc oxide (Zn O), ITO, indium zinc oxide (In2O3-ZnO, etc.) or these metal oxides A material containing silicon oxide can be used.
[0178] The connector is a paste or sheet-like material made by mixing metal particles with thermosetting resin. It is possible to use a material that exhibits anisotropic conductivity by thermocompression bonding using metal particles. Examples of such materials include layers of two or more metals, such as nickel particles coated with gold. It is preferred to use particles.
[0179] The colored layer is a colored layer that transmits light in a specific wavelength band. For example, A red (R) color filter transmits light in the green wavelength range, and a green (G) color filter transmits light in the green wavelength range. Use a blue (B) color filter that transmits light in the blue wavelength range. Each color layer can be made of various materials by printing, inkjet printing, photolithography, etc. The electrodes are formed at desired positions by a roughening etching method or the like.
[0180] The light-shielding layer is provided between adjacent colored layers. The light-shielding layer is configured to prevent light from entering the adjacent organic EL elements. The colored layer is then cut to a thickness of 100 μm, and the color mixture between adjacent organic EL elements is suppressed. By providing the light shielding layer so as to overlap the light shielding layer, it is possible to suppress light leakage. For this purpose, a material that blocks light emitted from the organic EL element can be used. For example, a metal material or The black matrix may be formed using a resin material containing a pigment or a dye. If the light emitting element is provided in an area other than the light emitting element, such as the driving circuit, unintended light leakage due to guided light, etc. may occur. This is preferable because it can suppress the above.
[0181] In addition, an overcoat may be provided to cover the colored layer and the light-shielding layer. This makes it possible to prevent impurities contained in the colored layer from diffusing into the organic EL element. The overcoat is made of a material that transmits light emitted from the organic EL element, such as silicon nitride. Inorganic insulating films such as silicon film and silicon oxide film, and organic insulating films such as acrylic film and polyimide film Alternatively, a laminated structure of an organic insulating film and an inorganic insulating film may be used.
[0182] In addition, when the material for the adhesive layer is applied onto the colored layer and the light-shielding layer, the material for the overcoat is It is preferable to use a material that has high wettability with respect to the material of the adhesive layer. As the substrate 453 (FIG. 10(A)), an oxide conductive film such as an ITO film or a film having a degree of transparency is used. It is preferable to use a thin metal film such as an Ag film.
[0183] <Production method example> Next, a method for manufacturing a light emitting device will be illustrated with reference to FIGS. 12 and 13. The light emitting device having the configuration shown in FIG.
[0184] First, a peeling layer 1503 is formed on a production substrate 1501, and an insulating layer 140 is formed on the peeling layer 1503. Next, a plurality of transistors, a conductive layer 1357, an insulating layer 1405, and a 1407, an insulating layer 1409, a plurality of light-emitting elements, and an insulating layer 1411 are formed. The insulating layer 1409 and the insulating layer 1407 are opened so that the conductive layer 1357 is exposed (FIG. 1 2(A)).
[0185] In addition, a peeling layer 1507 is formed over the formation substrate 1505, and an insulating layer 145 is formed over the peeling layer 1507. Next, a light-shielding layer 1457, a coloring layer 1459, and an overcoat 1456 are formed on the insulating layer 1455. A coating 1461 is then formed (FIG. 12(B)).
[0186] The substrates 1501 and 1505 are made of a glass substrate, a quartz substrate, and a silicon substrate, respectively. Substrates such as a ceramic substrate, a metal substrate, etc. can be used.
[0187] The glass substrate may be, for example, aluminosilicate glass or aluminoborosilicate glass. Glass materials such as glass, barium borosilicate glass, etc. can be used. If the temperature is high, it is better to use glass with a distortion point of 730°C or higher. etc. can be used.
[0188] When a glass substrate is used as the preparation substrate, a silicon oxide film, When an insulating film such as a silicon oxynitride film, a silicon nitride film, or a silicon nitride oxide film is formed, This is preferable since it can prevent contamination from the glass substrate.
[0189] The peeling layers 1503 and 1507 are made of tungsten, molybdenum, and titanium, respectively. Tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium an element selected from the group consisting of tungsten, palladium, osmium, iridium, and silicon; It is made of an alloy material containing the element, or a compound material containing the element, and is a single layer or a laminated layer. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline.
[0190] The release layer can be formed by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. The coating method includes a spin coating method, a droplet discharging method, and a dispensing method.
[0191] When the peeling layer has a single layer structure, it is made of a tungsten layer, a molybdenum layer, or a combination of tungsten and molybdenum. It is preferable to form a layer containing a mixture of tungsten oxide or oxide. a layer containing an oxynitride of molybdenum, a layer containing an oxide or oxynitride of molybdenum, or a layer containing tungsten Alternatively, a layer containing an oxide or oxynitride of a mixture of tantalum and molybdenum may be formed. A mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum. do.
[0192] In addition, a laminated structure of a layer containing tungsten and a layer containing an oxide of tungsten may be used as the peeling layer. In the case of forming a tungsten-containing layer, an insulating film made of oxide is formed on the tungsten-containing layer. By forming the insulating film, a layer containing tungsten oxide is formed at the interface between the tungsten layer and the insulating film. In addition, the surface of the layer containing tungsten may be subjected to a thermal oxidation treatment. , oxygen plasma treatment, nitrous oxide (N2O) plasma treatment, ozone water, and other highly oxidizing solvents Alternatively, a layer containing tungsten oxide may be formed by performing a treatment with a liquid or the like. The treatment and heating process may be carried out using oxygen, nitrogen, or nitrous oxide, either alone or in combination with other gases. The above plasma treatment or heat treatment may be performed under a gas atmosphere. By changing the temperature, it is possible to control the adhesion between the release layer and the insulating film that is formed later. do.
[0193] Each insulating layer is formed using a method such as sputtering, plasma CVD, coating, or printing. For example, the film formation temperature can be increased to 250°C or higher, up to 400°C, using the plasma CVD method. By forming the film as described below, it is possible to obtain a dense film having extremely high gas barrier properties.
[0194] Thereafter, the surface of the preparation substrate 1505 on which the colored layer 1459 and the like are provided or the surface of the preparation substrate 1501 on which the colored layer 1459 and the like are provided is A material that will become the adhesive layer 1413 is applied to the surface on which the optical element 1430 and the like are provided, and the adhesive layer 1413 The surfaces are then attached together via an adhesive (FIG. 12(C)).
[0195] Then, the formation substrate 1501 is peeled off, and the exposed insulating layer 1405 and the flexible substrate 1401 are The substrate is attached using an adhesive layer 1403. The substrate 1505 is peeled off, and the exposed insulating layer is The layer 1455 and the flexible substrate 1303 are attached to each other using an adhesive layer 1305. ) is configured such that the flexible substrate 1303 does not overlap with the conductive layer 1357. 7 and the flexible substrate 1303 may overlap.
[0196] Note that in one embodiment of the present invention, various peeling methods can be applied to the formation substrate. When a layer containing a metal oxide film is formed on the side in contact with the layer to be peeled as a peeling layer, the metal oxide The film is weakened by crystallization, and the layer to be peeled off can be peeled off from the substrate. An amorphous silicon film containing hydrogen was formed as a peeling layer between the highly heat-sensitive substrate and the layer to be peeled off. In this case, the amorphous silicon film is removed by irradiation with laser light or etching. The layer can be peeled off from the substrate. A layer including a metal oxide film is formed, the metal oxide film is weakened by crystallization, and a part of the peeling layer is further formed. After removing the part by etching using a solution or fluoride gas such as NF3, BrF3, or ClF3, In addition, the nitrogen oxide film can be used as a peeling layer. , films containing oxygen, hydrogen, etc. (e.g., amorphous silicon films containing hydrogen, hydrogen-containing alloy films, oxygen-containing The peeling layer is irradiated with laser light to remove the nitrogen, oxygen, and hydrogen contained in the peeling layer. A method of releasing the gas to promote peeling between the layer to be peeled and the substrate may also be used. The substrate on which the peeling layer was formed is mechanically removed or degassed with a solvent such as NF3, BrF3, or ClF3. The peeling layer may be removed by etching using a fluoride gas. It is not necessary to set
[0197] Moreover, by combining a plurality of the above-mentioned peeling methods, the peeling step can be carried out more easily. That is, irradiation with laser light, etching of the peeling layer with gas or solution, or using a sharp knife or knife The peeling layer and the layer to be peeled are then mechanically removed using a tool such as a brush to make them easier to peel from each other. Peeling can also be achieved by physical force (mechanically, etc.).
[0198] In addition, the layer to be peeled off can be peeled off from the substrate by penetrating a liquid into the interface between the peeling layer and the layer to be peeled off. It is also possible to apply liquid during the peeling process. The functional elements contained in the layer to be peeled off may be adversely affected (e.g., the semiconductor elements may be destroyed by static electricity). The liquid may be sprayed in the form of mist or vapor. For the purpose, pure water or organic solvents can be used. Neutral, alkaline, or acidic aqueous solutions can be used. Alternatively, a liquid or an aqueous solution in which a salt is dissolved may be used.
[0199] As another peeling method, if the peeling layer is made of tungsten, ammonia water and peroxide are used. The peeling layer may be etched with a mixed solution of hydrogen chloride and water to perform the peeling.
[0200] Note that when separation is possible at the interface between the formation substrate and the layer to be peeled off, a peeling layer does not have to be provided. For example, glass is used as the substrate, and polyimide, polyester, or polyimide is placed in contact with the glass. Form an organic resin such as olefin, polyamide, polycarbonate, or acrylic. In addition, the adhesion between the substrate and the organic resin is improved by performing laser irradiation or heat treatment. Then, insulating films and transistors are formed on the organic resin. Laser irradiation with high energy density or heat treatment at a higher temperature than the previous heat treatment By carrying out the above steps, it is possible to separate the substrate and the organic resin at the interface. Alternatively, separation may be achieved by allowing a liquid to penetrate into the interface between the substrate and the organic resin.
[0201] In this method, insulating films and transistors are formed on organic resins that have low heat resistance. The substrate cannot be exposed to high temperatures during the manufacturing process. Since a high-temperature fabrication process is not essential, the above-mentioned can be suitably formed on an organic resin.
[0202] The organic resin may be used as a substrate for forming a light-emitting device, or the organic resin may be removed. Alternatively, another substrate may be attached to the exposed surface of the layer to be peeled using an adhesive.
[0203] Alternatively, a metal layer is provided between the substrate and the organic resin, and a current is passed through the metal layer to form the metal layer. The metal layer may be heated to separate the organic resin from the metal layer at the interface therebetween.
[0204] Finally, the insulating layer 1455 and the adhesive layer 1413 are opened to expose the conductive layer 1357. (FIG. 13B) In the case where the flexible substrate 1303 overlaps with the conductive layer 1357, The flexible substrate 1303 and the adhesive layer 1305 are also opened (FIG. 13(C)). The method is not particularly limited, and examples thereof include laser ablation, etching, and ion beam sputtering. Alternatively, the film on the conductive layer 1357 may be cut with a sharp blade or the like. Alternatively, a portion of the film may be peeled off by applying physical force.
[0205] In this manner, a light-emitting device can be manufactured.
[0206] In the present specification and the like, an active element (active element, nonlinear element) in a pixel is referred to as an The active matrix method or the passive matrix method that does not have active elements in the pixels is used. It is possible.
[0207] In the active matrix method, various active elements, not just transistors, are used. Active elements can be used. For example, MIM (Metal Insulator Metal etal) or TFD (Thin Film Diode) can also be used. These elements have fewer manufacturing steps, which reduces manufacturing costs and improves yields. In addition, since these elements are small in size, the aperture ratio can be improved. This makes it possible to achieve low power consumption and high brightness.
[0208] The passive matrix method does not use active elements, so there are fewer manufacturing steps and manufacturing costs are lower. In addition, since no active elements are used, the aperture ratio can be reduced. It is possible to improve the light emission efficiency, thereby achieving lower power consumption or higher brightness.
[0209] This embodiment mode can be combined with other embodiment modes as appropriate.
[0210] (Embodiment 7) In this embodiment, the configuration of a bendable touch panel will be described with reference to FIGS. 14 to 17. The material of each layer can be referred to in the sixth embodiment. In this embodiment, a touch panel using an organic EL element is illustrated, but the present invention is not limited thereto. In one aspect of the present invention, for example, a touch panel using another element exemplified in the sixth embodiment is provided. It is possible to create a
[0211] <Configuration Example 2-1> FIG. 14(A) is a top view of the touch panel. FIG. 14(B) is a top view of the touch panel shown by the dashed line A in FIG. 14(C) is a cross-sectional view taken along the dashed line E in FIG. -F cross-sectional view.
[0212] As shown in FIG. 14A, a touch panel 390 has a display unit 301 .
[0213] The display unit 301 includes a plurality of pixels 302 and a plurality of imaging pixels 308. It is possible to detect a finger or the like touching the display unit 301. A touch sensor can be formed by using the above-mentioned.
[0214] The pixel 302 includes a number of sub-pixels (e.g., sub-pixel 302R), each of which includes a light-emitting element and a light-emitting diode. A pixel circuit is provided that can provide power to drive the photoelement.
[0215] The pixel circuit includes a wiring that can supply a selection signal and a wiring that can supply an image signal. It is electrically connected to the wiring.
[0216] The touch panel 390 also includes a scanning line driver circuit that can supply a selection signal to the pixel 302. a line 303g(1), and an image signal line driver circuit capable of supplying an image signal to the pixel 302; Equipped with 303s(1).
[0217] The imaging pixel 308 includes a photoelectric conversion element and an imaging pixel circuit that drives the photoelectric conversion element.
[0218] The imaging pixel circuit includes wiring that can supply a control signal and a power supply potential. The semiconductor device is electrically connected to a wiring that can be connected to the semiconductor device.
[0219] The control signal may be, for example, a pixel circuit for reading out a recorded image signal. a signal that can initialize the imaging pixel circuit, and a signal that can detect light by the imaging pixel circuit Examples of such a signal include a signal that can determine the time to
[0220] The touch panel 390 includes an imaging pixel drive circuit that can provide control signals to the imaging pixels 308. The image sensor further includes a line 303g(2) and an image pickup signal line drive circuit 303s(2) that reads out image pickup signals.
[0221] As shown in FIG. 14B, the touch panel 390 includes a substrate 510 and a substrate 510 facing the substrate 510. The semiconductor device has a substrate 570.
[0222] A flexible material can be suitably used for the substrate 510 and the substrate 570 .
[0223] Materials that suppress the permeation of impurities can be suitably used for the substrates 510 and 570. For example, if the water vapor transmission rate is 10 -5 g / m 2 ·day or less, preferably 10 -6 g / m 2 Materials with a shelf life of 0.1-day or less can be preferably used.
[0224] Materials having approximately the same linear expansion coefficient may be suitably used for substrate 510 and substrate 570 . For example, the linear expansion coefficient is 1×10 -3 / K or less, preferably 5×10 -5 / K or less, more preferred Or 1×10 -5 A material having a viscosity of 0.1 to 1.0 μm may be preferably used.
[0225] The substrate 510 includes a flexible substrate 510b, an insulating layer 510a for preventing impurities from diffusing into the light-emitting element, The flexible substrate 510b and the insulating layer 510a are laminated on each other by the adhesive layer 510c. It is a layered body.
[0226] The substrate 570 includes a flexible substrate 570b, an insulating layer 570a for preventing impurities from diffusing into the light-emitting element, and an adhesive layer 570c that bonds the flexible substrate 570b and the insulating layer 570a. .
[0227] For example, polyester, polyolefin, polyamide (nylon, aramid, etc.), polyimide Amide, polycarbonate or acrylic, urethane, epoxy or siloxane bonds A material containing a resin having such a property can be used for the adhesive layer.
[0228] The sealing layer 560 bonds the substrate 570 and the substrate 510 together. The pixel circuit and the light emitting element (for example, the first light emitting element 350R) are mounted on a substrate 5. 10 and the substrate 570.
[0229] The pixel 302 includes a subpixel 302R, a subpixel 302G, and a subpixel 302B (FIG. 14( C). The subpixel 302R includes a light-emitting module 380R, and the subpixel 302G includes a light-emitting Subpixel 302B comprises light-emitting module 380G, and subpixel 302B comprises light-emitting module 380B.
[0230] For example, the subpixel 302R supplies power to the first light emitting element 350R and the second light emitting element 350R. The pixel circuit includes a transistor 302t capable of supplying a voltage (FIG. 14B). The light emitting module 380R includes a first light emitting element 350R and an optical element (e.g., a colored layer 3 67R).
[0231] The light emitting element 350R includes a first lower electrode 351R, an upper electrode 352, and a lower electrode 351R. The display device has an EL layer 353 between two electrodes 352 (FIG. 14(C)).
[0232] The EL layer 353 includes a light-emitting unit 353a, a light-emitting unit 353b, and a light-emitting unit 353c. There is an intermediate layer 354 between the light-emitting unit 353a and the light-emitting unit 353b.
[0233] The light emitting module 380R has a first color layer 367R on a substrate 570. Any material may be used as long as it transmits light having a wavelength of, for example, red, green, or blue. Alternatively, the light emitted by the light emitting element can be directly transmitted through the A transparent region may be provided. Also, each light emitting element may emit light of a different color. In this case, the colored layer may or may not be provided.
[0234] For example, the light emitting module 380R includes a light emitting element 350R and a sealing layer in contact with the color layer 367R. It has 560.
[0235] The colored layer 367R is located so as to overlap the light emitting element 350R. A part of the light emitted from the sealing layer 560 passes through the colored layer 367R and is reflected by the light as shown by the arrows in the figure. The light is emitted to the outside of the light emitting module 380R as shown.
[0236] The touch panel 390 includes a light-shielding layer 367BM on a substrate 570. The light-shielding layer 367BM is It is provided so as to surround a colored layer (for example, the colored layer 367R).
[0237] The touch panel 390 includes an anti-reflection layer 367p at a position overlapping the display unit 301. As the blocking layer 367p, for example, a circular polarizing plate can be used.
[0238] The touch panel 390 includes an insulating layer 321. The insulating layer 321 is provided with a transistor 302t. The insulating layer 321 serves to flatten the unevenness caused by the pixel circuit. In addition, the diffusion of impurities into the transistor 302t and the like can be suppressed. A laminate of insulating layers can be applied to the insulating layer 321.
[0239] The touch panel 390 has a light-emitting element (for example, a light-emitting element 350R) on an insulating layer 321. .
[0240] The touch panel 390 has a partition wall 328 that overlaps an end of the lower electrode 351R on the insulating layer 321. In addition, a spacer 329 for controlling the distance between the substrate 510 and the substrate 570 is provided between the partition wall 328. Have it on top.
[0241] The image signal line driver circuit 303s(1) includes a transistor 303t and a capacitor 303c. The driver circuit and the pixel circuit can be formed on the same substrate in the same process. As shown in B), the transistor 303t has a second gate 304 on the insulating layer 321. The second gate 304 is electrically connected to the gate of the transistor 303t. Alternatively, they may be provided with different potentials. A second gate 304 may be provided for transistor 308t, transistor 302t, etc.
[0242] The imaging pixel 308 detects the light irradiated to the photoelectric conversion element 308p and the photoelectric conversion element 308p. The imaging pixel circuit includes a transistor 308t. nothing.
[0243] For example, a pin-type photodiode can be used as the photoelectric conversion element 308p.
[0244] The touch panel 390 includes wiring 311 through which a signal can be supplied, and a terminal 319 is disposed. The line 311 can supply signals such as image signals and synchronization signals. The FPC 309(1) is electrically connected to the terminal 319. ) may have a printed wiring board (PWB) attached to it.
[0245] The transistors formed in the same process are referred to as transistor 302t and transistor 303t. , transistor 308t, etc.
[0246] In addition to the gate, source and drain of the transistor, various components that make up the touch panel Materials that can be used for wiring and electrodes include aluminum, titanium, chromium, and nickel. Kel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten Metals such as these or alloys containing these as the main components are used in a single layer structure or a laminate structure. For example, A single layer structure of aluminum film containing silicon, and a double layer structure of aluminum film laminated on titanium film A two-layer structure in which an aluminum film is laminated on a tungsten film, a copper-magnesium-aluminum film, Two-layer structure with copper film laminated on aluminum alloy film, two-layer structure with copper film laminated on titanium film, A two-layer structure in which a copper film is laminated on a tungsten film, a titanium film or titanium nitride film, and the titanium An aluminum film or a copper film is laminated on the titanium nitride film, and a titanium film or a copper film is laminated on the aluminum film or the titanium nitride film. A three-layer structure forming a titanium nitride film or a molybdenum film or a molybdenum nitride film and the molybdenum film or the molybdenum nitride film. An aluminum film or a copper film is laminated on the carbide film or the molybdenum nitride film, and then There are three-layer structures, such as a molybdenum film or a molybdenum nitride film formed on the indium oxide film. A transparent conductive material containing zinc oxide, tin oxide, or zinc oxide may be used. Copper is preferred because it allows for greater control of the shape by etching.
[0247] <Configuration Example 2-2> 15(A) and (B) are perspective views of the touch panel 505. FIG. 16(A) is a cross-sectional view taken along the dashed line G3-G4 shown in FIG. 15(A). FIG.
[0248] The touch panel 505 includes a display unit 501 and a touch sensor 595 (FIG. 15B). The touch panel 505 also includes a substrate 510, a substrate 570, and a substrate 590. The substrate 510, the substrate 570 and the substrate 590 are all flexible.
[0249] The display unit 501 includes a substrate 510, a plurality of pixels on the substrate 510, and a display device for supplying signals to the pixels. The plurality of wirings 511 are arranged on the outer periphery of the substrate 510. The wire is routed through the FPC 509(1), part of which constitutes the terminal 519. and electrically connect it to.
[0250] The substrate 590 includes a touch sensor 595 and a plurality of electrodes electrically connected to the touch sensor 595. The wiring 598 is arranged around the periphery of the substrate 590. This terminal is electrically connected to the FPC509(2). In FIG. 15B, for clarity, the substrate 590 is provided on the rear surface side (opposite surface side to the substrate 510). Electrodes and wiring of touch sensor 595 are indicated by solid lines.
[0251] As the touch sensor 595, for example, a capacitive touch sensor can be used. The methods include a surface capacitive type and a projected capacitive type.
[0252] Projected capacitive touch panels are classified into self-capacitance and mutual capacitance types, which differ mainly in their drive systems. The mutual capacitance method is preferable because it enables simultaneous multi-point detection.
[0253] In the following, the case where a projected capacitive touch sensor is applied will be described with reference to FIG. 15(B). I will use this to explain.
[0254] In addition, various sensors that can detect the proximity or contact of a detection target such as a finger are applied. It is possible.
[0255] The projected capacitive touch sensor 595 has a first electrode 591 and a second electrode 592. The first electrode 591 is electrically connected to one of the multiple wirings 598, and the second electrode 5 92 electrically connects to any other of the plurality of wirings 598 .
[0256] The second electrodes 592 are arranged repeatedly in one direction as shown in FIGS. The shape is made up of a number of quadrilaterals connected at their corners.
[0257] The first electrode 591 is quadrilateral and repeats in a direction intersecting the direction in which the second electrode 592 extends. They are arranged repeatedly.
[0258] The wiring 594 electrically connects two first electrodes 591 that sandwich one of the second electrodes 592. At this time, the area of the intersection between the second electrode 592 and the wiring 594 is minimized. This makes it possible to reduce the area of the region where no electrodes are provided, and the transmittance can be reduced. As a result, unevenness in the brightness of the light passing through the touch sensor 595 can be reduced. can be done.
[0259] The shapes of the first electrode 591 and the second electrode 592 are not limited to this, and various shapes may be used. For example, a plurality of strip-shaped first electrodes may be arranged with as few gaps as possible, and the insulating layer may be formed. A plurality of strip-shaped second electrodes are arranged so as to intersect with the first electrodes through the layers. The two adjacent second electrodes may be provided at a distance from each other. If a dummy electrode that is electrically insulated from the two electrodes is provided between the two electrodes, the transmittance of the two electrodes will differ. This is preferable because it is possible to reduce the area of the region.
[0260] The touch sensor 595 includes a substrate 590 and first electrodes 59 arranged in a staggered pattern on the substrate 590. The first and second electrodes 592, the insulating layer 593 covering the first electrode 591 and the second electrode 592, and The first electrodes 591 are electrically connected to each other through wiring 594 .
[0261] The adhesive layer 597 is formed on the touch sensor 595 so that the touch sensor 595 overlaps the display unit 501 as shown in FIG. As shown, the substrate 590 is bonded to the substrate 570.
[0262] The first electrode 591 and the second electrode 592 are formed using a light-transmitting conductive material. Examples of the conductive material having a light-transmitting property include indium oxide, indium tin oxide, and indium Conductive oxides such as zinc oxide, zinc oxide, and zinc oxide doped with gallium can be used. A film containing graphene can also be used. The film containing graphene can be, for example, For example, the graphene oxide film may be reduced to form a film containing the graphene oxide. As a method for this, a method of applying heat can be mentioned.
[0263] After forming a film of a light-transmitting conductive material on a substrate 590 by a sputtering method, By using various patterning techniques such as lithography, unnecessary parts are removed to form the first electrode. A first electrode 591 and a second electrode 592 can be formed.
[0264] The material used for the insulating layer 593 is, for example, a resin such as acrylic or epoxy, In addition to resins with oxyan bonds, silicon oxide, silicon oxynitride, aluminum oxide, etc. Any inorganic insulating material may be used.
[0265] An opening reaching the first electrode 591 is provided in the insulating layer 593, and a wiring 594 is provided adjacent to the insulating layer 593. The first electrode 591 is electrically connected. The light-transmitting conductive material increases the aperture ratio of the touch panel. Since the first electrode 5 can be easily used as the wiring 594, A material having a higher electrical conductivity than the first electrode 591 and the second electrode 592 can reduce electrical resistance. 4 can be suitably used.
[0266] Each of the second electrodes 592 extends in one direction, and the plurality of second electrodes 592 are arranged in a stripe pattern. It is provided in.
[0267] The wiring 594 is provided so as to intersect with one of the second electrodes 592 .
[0268] A pair of first electrodes 591 are provided with one of the second electrodes 592 interposed therebetween, and a pair of wirings 594 are The first electrodes 591 are electrically connected.
[0269] The first electrodes 591 are not necessarily arranged in a direction perpendicular to one of the second electrodes 592. does not need to be placed.
[0270] The first wiring 598 is electrically connected to the first electrode 591 or the second electrode 592. A part of 598 functions as a terminal. The wiring 598 is made of, for example, aluminum or gold. , platinum, silver, nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper Alternatively, a metal material such as palladium or an alloy material containing such a metal material can be used.
[0271] Note that an insulating layer is provided to cover the insulating layer 593 and the wiring 594 to protect the touch sensor 595. It is possible.
[0272] Furthermore, the connection layer 599 electrically connects the wiring 598 and the FPC 509(2).
[0273] The connection layer 599 may be made of various anisotropic conductive films (ACFs). Conductive Film and Anisotropic Conductive Paste (ACP) pic Conductive Paste) can be used.
[0274] The adhesive layer 597 has a light-transmitting property. For example, a thermosetting resin or an ultraviolet-curing resin is used. Specifically, resins having acrylic, urethane, epoxy, or siloxane bonds can be used. Resins such as grease can be used.
[0275] The display unit 501 includes a plurality of pixels arranged in a matrix. It includes a pixel circuit that drives the element.
[0276] In this embodiment, an organic EL element that emits white light is used as a display element. However, the display element is not limited to this.
[0277] For example, organic EL elements with different emitting colors can be used for each subpixel so that the color of light emitted differs. It may be applied to each element, in which case the colored layer does not need to be provided.
[0278] The substrate 510, the substrate 570, and the sealing layer 560 can have the same configuration as in Configuration Example 2-1. .
[0279] The pixel includes a sub-pixel 502R, which comprises a light-emitting module 580R.
[0280] The subpixel 502R supplies power to the first light emitting element 550R and the second light emitting element 550R. The light-emitting module 502 includes a pixel circuit including a transistor 502t. 80R includes a first light emitting element 550R and an optical element (eg, a color layer 567R).
[0281] The light-emitting element 550R has a lower electrode, an upper electrode, and an EL layer between the lower electrode and the upper electrode.
[0282] The light emitting module 580R has a first colored layer 567R in the direction in which the light is extracted.
[0283] In addition, when the sealing layer 560 is provided on the side from which light is extracted, the sealing layer 560 is It contacts the optical element 550R and the first colored layer 567R.
[0284] The first colored layer 567R is located so as to overlap the first light emitting element 550R. A part of the light emitted by the element 550R is transmitted through the first colored layer 567R and travels in the direction of the arrow shown in the figure. The light is emitted to the outside of light emitting module 580R in the opposite direction.
[0285] The display unit 501 has a light-shielding layer 567BM in the light-emitting direction. The light-shielding layer 567BM is It is provided so as to surround a colored layer (for example, the first colored layer 567R).
[0286] The display unit 501 includes an anti-reflection layer 567p at a position overlapping the pixels. As the polarizing plate, for example, a circular polarizing plate can be used.
[0287] The display unit 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t. The insulating film 521 is used as a layer for flattening unevenness caused by the pixel circuit. In addition, a laminated film including a layer capable of suppressing diffusion of impurities can be applied to the insulating film 521. This can prevent the reliability of the transistors 502t and the like from being deteriorated due to the diffusion of impurities. The decline can be suppressed.
[0288] The display unit 501 has a light-emitting element (for example, a first light-emitting element 550R) on an insulating film 521. .
[0289] The display portion 501 has a partition wall 528 on an insulating film 521, the partition wall 528 overlapping an end portion of a first lower electrode. In addition, a spacer for controlling the distance between the substrate 510 and the substrate 570 is provided on the partition wall 528 .
[0290] The scanning line driver circuit 503g(1) includes a transistor 503t and a capacitor 503c. In addition, the driver circuit and the pixel circuit can be formed in the same process and over the same substrate.
[0291] The display unit 501 includes a wiring 511 capable of supplying a signal, and a terminal 519 is connected to the wiring 51 1. In addition, the FP 1 can supply signals such as image signals and synchronization signals. C509(1) is electrically connected to terminal 519.
[0292] In addition, a printed wiring board (PWB) may be attached to the FPC509(1). .
[0293] The display portion 501 has wiring such as scanning lines, signal lines, and power lines. It can be used for wiring.
[0294] Note that various transistors can be used in the display portion 501. A configuration in which the above is applied to the display unit 501 is shown in FIGS.
[0295] For example, a semiconductor layer including an oxide semiconductor, amorphous silicon, or the like is formed as shown in FIG. The present invention can be applied to a transistor 502t and a transistor 503t.
[0296] For example, a semiconductor layer containing polycrystalline silicon crystallized by a process such as laser annealing is applied to the transistor 502t and the transistor 503t shown in FIG. It is possible.
[0297] In addition, a configuration in which a top-gate type transistor is applied to the display unit 501 is shown in FIG. C) is shown.
[0298] For example, polycrystalline silicon or a single crystal silicon film transferred from a single crystal silicon substrate, etc. The semiconductor layer including the transistor 502t and the transistor 50 Can be applied to 3T.
[0299] <Configuration Example 2-3> 17 is a cross-sectional view of touch panel 505B. 505B is a display unit 5 that displays the supplied image information on the side where the transistor is provided. The configuration example is that the touch sensor is provided on the substrate 510 side of the display unit. This is different from the touch panel 505 of 2-2. Here, the different configuration will be described in detail. The above description is incorporated herein by reference insofar as such a configuration can be used.
[0300] The first colored layer 567R is located so as to overlap the first light emitting element 550R. The light-emitting element 550R shown in FIG. 1 emits light toward the side where the transistor 502t is provided. As a result, a part of the light emitted by the light emitting element 550R is transmitted through the first colored layer 567R, The light is emitted to the outside of light emitting module 580R in the direction of the arrow shown in the figure.
[0301] The display unit 501 has a light-shielding layer 567BM in the light-emitting direction. The light-shielding layer 567BM is It is provided so as to surround a colored layer (for example, the first colored layer 567R).
[0302] The touch sensor 595 is provided on the substrate 510 side of the display unit 501 (FIG. 17(A)). .
[0303] The adhesive layer 597 is between the substrate 510 and the substrate 590, and connects the display unit 501 and the touch sensor 59 Paste 5 together.
[0304] Note that various transistors can be used in the display portion 501. A configuration in which the above is applied to the display unit 501 is shown in FIGS.
[0305] For example, a semiconductor layer including an oxide semiconductor, amorphous silicon, or the like is formed as shown in FIG. The present invention can be applied to a transistor 502t and a transistor 503t.
[0306] For example, a semiconductor layer containing polycrystalline silicon or the like is formed into a transistor 50 shown in FIG. 2t and transistor 503t.
[0307] In addition, a configuration in which a top-gate type transistor is applied to the display unit 501 is shown in FIG. C) is shown.
[0308] For example, a semiconductor layer including polycrystalline silicon or a transferred single crystal silicon film is formed as shown in FIG. C) can be applied to the transistor 502t and the transistor 503t shown in FIG. .
[0309] This embodiment mode can be combined with other embodiment modes as appropriate. [Explanation of symbols]
[0310] 10. Chassis 11 Display device 11a Display area 11b Hidden area 11c First Zone 11d. The Second Area 13 Protective layer 13a Protective layer 13b Protective layer 15 Support 15a Support 15b Support 16 Winding section 17 Translucent area 18 Materials 19 Fixed part 20 Materials 21 Operation buttons 31 Operation buttons 32 Image Sensor 226 Insulating Layer 301 Display section 302 pixels 302B subpixel 302G subpixel 302R subpixel 302t Transistor 303c capacity 303g(1) Scanning line driver circuit 303g(2) Imaging pixel driving circuit 303s(1) Image signal line driver circuit 303s(2) Imaging signal line driver circuit 303t Transistor Gate 304 308 imaging pixels 308p Photoelectric conversion element 308t transistor 309 FPC 311 Wiring 319 Terminal 321 Insulating layer 328 Bulkhead 329 Spacer 350R Light emitting element 351R lower electrode 352 Upper electrode 353 EL layer 353a Light Emitting Unit 353b Light Emitting Unit 354 Middle Class 367BM light shielding layer 367p anti-reflection layer 367R colored layer 380B Light Emitting Module 380G Light Emitting Module 380R Light Emitting Module 390 Touch Panel 401 Lower electrode 402 EL layer 403 Upper electrode 405 Insulation Layer 407 Adhesive layer 420 Flexible substrate 422 Adhesive layer 424 Insulating layer 426 Adhesive layer 428 Flexible substrate 431 Light blocking layer 432 Colored layer 435 Conductive Layer 450 Organic EL element 453 Overcoat 454 Transistor 455 Transistor 457 Conductive Layer 463 Insulating Layer 465 Insulating Layer 467 Insulating Layer 491 Light emitting part 493 Drive circuit section 495 FPC 496 Insulating Layer 497 Connectors 501 Display section 502R subpixel 502t transistor 503c capacity 503g Scanning line driver circuit 503t Transistor 505 Touch Panel 505B Touch Panel 509 FPC 510 Substrate 510a Insulating layer 510b flexible substrate 510c adhesive layer 511 Wiring 519 Terminal 521 Insulating film 528 Bulkhead 550R Light emitting element 560 Sealing layer 567BM light shielding layer 567p anti-reflection layer 567R colored layer 570 Substrate 570a Insulating layer 570b flexible substrate 570c adhesive layer 580R Light Emitting Module 590 Substrate 591 First Electrode 592 Second Electrode 593 Insulating Layer 594 Wiring 595 Touch Sensor 597 Adhesive layer 598 Wiring 599 Connection Layer 1301 Element Layer 1303 Flexible substrate 1304 copies 1305 Adhesive layer 1306 Drive circuit section 1308 FPC 1357 Conductive layer 1401 Flexible substrate 1403 Adhesive layer 1405 Insulating layer 1407 Insulating layer 1409 Insulating layer 1411 Insulating layer 1413 Adhesive layer 1415 Connector 1430 Light emitting element 1431 Lower electrode 1433 EL layer 1435 Upper electrode 1440 Transistor 1455 Insulating layer 1457 Light blocking layer 1459 Colored layer 1461 Overcoat 1501 Preparation board 1503 Peeling layer 1505 Preparation Board 1507 Peeling layer
Claims
1. A display panel having a display area and a non-display area surrounding the display area in a frame shape, A light-emitting device that can be folded with a display surface of the display panel facing inward, a first protective layer having an area facing a surface of the display panel opposite to the display surface; a first support and a second support overlapping the display panel via the first protective layer and spaced apart from each other; a second protective layer having an area facing the display surface of the display panel; a third support and a fourth support overlapping the display panel via the second protective layer and spaced apart from each other; the display panel has a first portion overlapping the first support, a second portion overlapping the second support, and a third portion located between the first portion and the second portion and having a radius of curvature in a folded state; the first support overlaps with the third support via the first portion; the second support overlaps with the fourth support via the second portion; the first support has a region fixed to the first portion via the first protective layer, the second support has a region fixed to the second portion via the first protective layer, the first protective layer overlaps with each of the first portion, the second portion, and the third portion; the second protective layer overlaps with a region of the third portion corresponding to the non-display region, the second protective layer has an area that does not overlap with the third support and the fourth support, and does not overlap with the display area; Light emitting device.
2. In claim 1, The first protective layer has a higher flexibility than the first support and the second support. Light emitting device.
3. In claim 1 or 2, The first protective layer comprises a metal. Light emitting device.
4. In any one of claims 1 to 3, The second protective layer comprises a rubber. Light emitting device.
5. In any one of claims 1 to 4, the first protective layer is more flexible than the first support and the second support; the second protective layer has a higher flexibility than the third support and the fourth support; Light emitting device.
6. In any one of claims 1 to 5, The radius of curvature is 1 mm or more and 100 mm or less. Light emitting device.
7. In any one of claims 1 to 6, the first support and the second support comprise a metal; Light emitting device.
Citation Information
Patent Citations
Picture display terminal
JP1998207389A
Display device
JP2004279867A
Electronic apparatus
JP2012213119A
Display device and electronic apparatus
JP2013210491A
Electronic apparatus
JP2013243588A