Electronic apparatus

Abstract

To provide a light-emitting device with flexibility that is lightweight and resistant against damage.SOLUTION: A light-emitting device includes a first flexible substrate, a second flexible substrate, an element layer, a first adhesive layer, and a second adhesive layer. The element layer includes a light-emitting element. The element layer is positioned between the first flexible substrate and the second flexible substrate. The first adhesive layer is positioned between the first flexible substrate and the element layer. The second adhesive layer is positioned between the second flexible substrate and the element layer. Outside an end part of the element layer, the first adhesive layer and the second adhesive layer are in contact with each other. Outside the end part of the element layer, an end part of the first adhesive layer, and an end part of the second adhesive layer, the first flexible substrate and the second flexible substrate are in contact with each other.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to an article, a method, and a manufacturing method. In particular, the present invention relates to a composition of matter. One embodiment of the present invention relates to a semiconductor device, a light-emitting device, a display device, an electronic device, a lighting device, and a manufacturing method thereof. In particular, the electroluminescence Light-emitting devices, display devices, electronic devices, lighting devices, and the like that utilize the EL phenomenon. It also relates to methods for producing them. [Background technology]

[0002] In recent years, light-emitting devices and display devices are expected to be used for a variety of purposes, and diversification is required. There are.

[0003] For example, in light-emitting devices and display devices for use in portable devices, etc., the devices are required to be thin and lightweight. It is also required that the material be resistant to damage.

[0004] Light-emitting elements that utilize the EL phenomenon (also referred to as EL elements) are easy to make thin and lightweight. It has features such as being able to respond quickly to signals and being able to be driven by a low-voltage DC power supply. Applications of these materials to light-emitting devices and display devices are currently being considered.

[0005] For example, Patent Document 1 discloses a film substrate on which transistors and organic EL display devices are mounted. A flexible active matrix type light emitting device having an EL element is disclosed. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2003-174153 A Summary of the Invention [Problem to be solved by the invention]

[0007] One embodiment of the present invention provides a novel light-emitting device, a display device, an electronic device, or a lighting device. Another object of the present invention is to provide a light-weight light-emitting device, a light-emitting display device, an electronic device, Another object of the present invention is to provide a signal processing device or a lighting device. One of the objects of the present invention is to provide a highly reliable light-emitting device, display device, electronic device, or lighting device. Another embodiment of the present invention is a light-emitting device, a display device, an electronic device, or the like that is not easily damaged. Another object of the present invention is to provide a lighting device having a thin thickness. It is an object of the present invention to provide a light-emitting device, a display device, an electronic device, or a lighting device. Another embodiment of the present invention is a light-emitting device, a display device, an electronic device, or a semiconductor device having high light extraction efficiency. Another object of the present invention is to provide a lighting device having high luminance. It is an object of the present invention to provide an optical device, a display device, an electronic device, or a lighting device. One embodiment of the present invention is a light-emitting device, a display device, an electronic device, or a lighting device with low power consumption. One of the purposes of this agreement is to provide

[0008] Another embodiment of the present invention is a light-emitting device or a display device that is lightweight, not easily broken, and flexible. It is an object of the present invention to provide an electronic device or a lighting device.

[0009] Note that one embodiment of the present invention does not necessarily solve all of these problems. [Means for solving the problem]

[0010] A light-emitting device according to one embodiment of the present invention includes a first flexible substrate, a second flexible substrate, an element layer, and a second flexible substrate. The device layer has a light emitting element, and the device layer has a first adhesive layer and a second adhesive layer. A first adhesive layer is disposed between the first flexible substrate and the second flexible substrate. a second adhesive layer is disposed between the second flexible substrate and the device layer, and a second adhesive layer is disposed between the second flexible substrate and the device layer, The first adhesive layer and the second adhesive layer are in contact with each other outside the edge of the layer. The first flexible substrate and the second flexible substrate are connected to each other on the outer side of the end of the adhesive layer and the end of the second adhesive layer. The substrates come into contact.

[0011] Alternatively, one embodiment of the present invention is a semiconductor device including a first flexible substrate, a second flexible substrate, an element layer, and a first the element layer has a light-emitting element, The substrate is disposed between the first flexible substrate and the second flexible substrate, and the first adhesive layer is disposed between the first flexible substrate and the second flexible substrate. a second adhesive layer disposed between the second flexible substrate and the device layer; and the first adhesive layer is located outside the edge of the element layer, the edge of the first adhesive layer, and the edge of the second adhesive layer. The light emitting device includes a third adhesive layer, a first flexible substrate, and a second flexible substrate.

[0012] For example, the first flexible substrate and the second flexible substrate are formed with low melting point glass, thermoplastic resin, or the like. In other words, the third adhesive layer is preferably made of low-melting glass or thermoplastic resin. It is preferable to have a plastic resin.

[0013] Alternatively, one embodiment of the present invention is a semiconductor device including a first flexible substrate, a second flexible substrate, an element layer, and a first The device layer has a light-emitting element, and the device layer has a first adhesive layer and a second adhesive layer. A first adhesive layer is disposed between the flexible substrate and the second flexible substrate. a second adhesive layer is disposed between the second flexible substrate and the device layer, and a second adhesive layer is disposed between the second flexible substrate and the device layer. and the second adhesive layer, the first flexible substrate, and the second adhesive layer, The light-emitting device has an end portion of the element layer and an end portion of the first adhesive layer. The first flexible substrate and the second flexible substrate are in contact with each other outside the end of the second adhesive layer. This is also fine.

[0014] In the light emitting device having the above-mentioned configuration, the thermal expansion coefficient of the first flexible substrate and the thermal expansion coefficient of the second flexible substrate are The absolute value of the difference in the thermal expansion coefficients of the plates is the thermal expansion coefficient of the first flexible substrate or the thermal expansion coefficient of the second flexible substrate. It is preferable that the rate is within 10%.

[0015] In the light emitting device having each of the above configurations, the first flexible substrate and the second flexible substrate are made of the same material. It is preferable that the composition further includes a food ingredient.

[0016] Further, an electronic device or a lighting device using the light-emitting device having any of the above structures is also one embodiment of the present invention.

[0017] In this specification, the term "light-emitting device" includes a display device using a light-emitting element. The element is connected to a connector, such as anisotropic conductive film or TCP (Tape Carrier The module has a printed wiring board at the end of the TCP. The COG (Chip On Glass) method is used for the module or light emitting element. Modules on which ICs (integrated circuits) are directly mounted are also included in the category of light-emitting devices. This also includes light-emitting devices used in lighting fixtures, etc. Effect of the Invention

[0018] In one embodiment of the present invention, a novel light-emitting device, a display device, an electronic device, or a lighting device is provided. In one embodiment of the present invention, a lightweight light-emitting device, a display device, an electronic device, Alternatively, a lighting device with high reliability can be provided. It is possible to provide an optical device, a display device, an electronic device, or a lighting device. In one embodiment of the present invention, a light-emitting device, a display device, an electronic device, or a lighting device that is not easily damaged is provided. Alternatively, in one embodiment of the present invention, a light-emitting device, a display device, or an electronic device having a small thickness can be provided. In one embodiment of the present invention, a light collecting device or a lighting device can be provided. It is possible to provide a light-emitting device, a display device, an electronic device, or a lighting device with high light emission efficiency. Alternatively, in one embodiment of the present invention, a light-emitting device, a display device, an electronic device, or Alternatively, in one embodiment of the present invention, a lighting device with low power consumption can be provided. It is possible to provide a device, a display device, an electronic device, or a lighting device.

[0019] In addition, according to one embodiment of the present invention, a light-emitting device, a display device, and the like that are lightweight, not easily broken, and flexible can be provided. The present invention may provide a lighting device, electronic device, or illumination device. [Brief description of the drawings]

[0020] [Figure 1] FIG. [Diagram 2] FIG. [Diagram 3] FIG. [Figure 4] FIG. [Diagram 5] FIG. [Figure 6] 1A to 1C illustrate a method for manufacturing a light-emitting device. [Figure 7]1A to 1C illustrate a method for manufacturing a light-emitting device. [Figure 8] FIG. [Figure 9] FIG. [Figure 10] FIG. [Figure 11] FIG. [Figure 12] FIG. [Figure 13] FIG. [Figure 14] FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the above-mentioned invention can be obtained by the following embodiments. It should not be construed as being limited to the contents described.

[0022] In the configuration of the invention described below, the same parts or parts having similar functions are referred to as the same parts. The same reference numerals are used in common among different drawings, and the repeated explanations are omitted. When referring to a function, the same hatch pattern may be used and no particular reference number may be given.

[0023] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in the actual embodiment, for ease of understanding. Therefore, the disclosed invention may not necessarily represent the actual position, size, range, etc. The present invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0024] (Embodiment 1) In this embodiment, a light-emitting device according to one embodiment of the present invention will be described with reference to FIGS. This will be explained using:

[0025] A structure of a light-emitting device according to one embodiment of the present invention will be described.

[0026] FIG. 1A shows a plan view of a light-emitting device according to one embodiment of the present invention, and FIG. A cross-sectional view of a light-emitting device is shown. The light-emitting device has a light extraction section 104 and a driving circuit section 106. do.

[0027] The light emitting device shown in FIG. 1B includes a flexible substrate 201, an adhesive layer 203, an element layer 101, an adhesive layer The element layer 101 includes a light-emitting element. The conductive layer included in the element layer 101 and the FPC 108 are electrically connected by a connector 215. Connected.

[0028] FIG. 2(A) shows a plan view of a light-emitting device according to another embodiment of the present invention, and FIGS. 2(B) to 2(G) show 1 and 2 show cross-sectional views of a light emitting device according to another embodiment of the present invention. The sensor has a drive circuit section 106.

[0029] The light emitting device shown in FIG. 2B includes a flexible substrate 201, an adhesive layer 203, an element layer 101, an adhesive layer The element layer 101 includes a light-emitting element. The conductive layer included in the element layer 101 and the FPC 108 are electrically connected by a connector 215. Connected.

[0030] Here, the organic compounds and metal materials used in the light-emitting element react easily with impurities such as moisture and oxygen. The life of the light-emitting element is significantly shortened by the reaction of the organic compound or metal material with the impurities. In one embodiment of the present invention, the adhesive layer 105 is formed on the outer side of the edge of the element layer 101. The adhesive layer 203 is in contact with the element layer 101. Therefore, the reliability of the light emitting device is improved. It is possible and preferable.

[0031] The light emitting device shown in FIG. 2C includes a flexible substrate 201, an adhesive layer 203, an element layer 101, an adhesive layer The conductive layer and the FP included in the element layer 101 are laminated in this order. C108 is electrically connected to the element layer 101 by a connector 215. On the outside, flexible substrate 201 and flexible substrate 103 are in contact.

[0032] Here, in order to improve the adhesion between the flexible substrate 201 and the flexible substrate 103, Adhesive, glass frit (low melting point glass), thermoplastic resin, etc. are placed in contact with the flexible substrate 103. It is preferable to place a resin or the like and harden or weld it. For example, in FIG. The adhesive layer 206 located outside the end portion adheres the flexible substrate 201 and the flexible substrate 10 to each other. The adhesive layer 206 is made of a material such as an adhesive, glass frit (low melting point Glass, thermoplastic resin, etc. can be used. The flexible substrate 103 may be directly welded. The flexible substrate used in one embodiment of the present invention is a substrate that is thermally expandable. Since the coefficient of thermal expansion is small and the heat resistance is high, even if localized heating such as thermocompression is used, the light-emitting device will not be damaged. With this structure, impurities such as moisture in the air are unlikely to penetrate into the element layer 101. This is preferable because it is difficult for foreign matter to enter the light emitting device and therefore it is possible to suppress a decrease in the reliability of the light emitting device.

[0033] The light emitting device shown in FIG. 2D includes a flexible substrate 201, an adhesive layer 203, an element layer 101, an adhesive layer The conductive layer and the FP included in the element layer 101 are laminated in this order. C108 is electrically connected to the element layer 101 by a connector 215. On the outside, the adhesive layer 105 and the adhesive layer 203 are in contact. The flexible substrate 201 and the flexible substrate 103 are disposed outside the ends of the adhesive layer 105. As in the light emitting device shown in FIG. In order to increase the adhesion of the flexible substrate 201 and the flexible substrate 103, an adhesive, a gallium nitride film, etc. are applied to the flexible substrate 201 and the flexible substrate 103. It is preferable to place glass frit (low melting point glass), thermoplastic resin, etc., and harden or fuse them. That is, in addition to the configuration of FIG. 2(D), an adhesive layer 2 located outside the end of the element layer is preferably provided. Alternatively, the flexible substrate 201 and the flexible substrate 103 may be directly welded together. This may be allowed.

[0034] In addition, as in the light-emitting device shown in FIG. 2(F), the edge of the element layer 101 and the edge of the adhesive layer 203 The adhesive layer 105, the flexible substrate 201 and the flexible substrate 103 may overlap each other on the outer side of the substrate 101. The adhesive layer 105 covers the edge of the element layer 101 and the edge of the adhesive layer 203. The flexible substrate 201 and the flexible substrate 103 are bonded together by an adhesive layer 105. Furthermore, as shown in FIG. 2G, the edge of the element layer 101, the edge of the adhesive layer 203, and The flexible substrate 201 and the flexible substrate 103 are in contact with each other outside the end of the adhesive layer 105. Good too.

[0035] As shown in FIGS. 2C, 2D, and 2G, the flexible substrate 101 is disposed outside the end of the element layer 101. When the plate 201 and the flexible substrate 103 are in contact with each other, materials having similar properties are used. Therefore, by using the same material for the pair of flexible substrates, It is preferable to use

[0036] Flexible substrates are made of materials such as glass, quartz, ceramics, sapphire, and organic resins. There can be.

[0037] Examples of glass include non-alkali glass, barium borosilicate glass, and aluminoboron glass. Silicate glass or the like can be used.

[0038] Examples of materials having flexibility and transparency to visible light include flexible materials. Thick glass, polyethylene terephthalate (PET), polyethylene naphthalate ( PEN) and other polyester resins, polyacrylonitrile resins, polyimide resins, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES ) resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamide-imide Resin, polyvinyl chloride resin, etc. In particular, it is preferable to use materials with a low thermal expansion coefficient. For example, polyamide-imide resin, polyimide resin, PET, etc. are preferably used. In addition, it is possible to use a substrate in which glass fibers are impregnated with organic resin, or an inorganic filler is impregnated with organic resin. It is also possible to use a substrate with a mixed material to reduce the thermal expansion coefficient.

[0039] In the light-emitting device of one embodiment of the present invention, a flexible substrate that does not need to transmit light may include A substrate having low light transmittance, such as a metal substrate, may be used. For example, but not limited to, aluminum, copper, nickel, or an aluminum alloy or For the material, an alloy of a metal such as stainless steel can be suitably used.

[0040] In the light-emitting device according to one embodiment of the present invention, the absolute value of the difference in the thermal expansion coefficient between the pair of flexible substrates is It is preferable that the thermal expansion coefficient of the pair of flexible substrates is within 10% of that of at least one of the pair of flexible substrates. By reducing the difference in the thermal expansion coefficient of the conductive substrate, it is possible to prevent the light emitting device from warping in one direction. In addition, the fact that the degree of expansion and contraction of the pair of flexible substrates differs due to heat is important in the light-emitting device. This is one of the causes of cracks occurring when the same material is used for a pair of flexible substrates. This makes it possible to reduce the difference in the thermal expansion coefficient between the pair of flexible substrates. can be done.

[0041] <Example 1> FIG. 1A is a plan view of a light-emitting device according to one embodiment of the present invention. An example of a cross-sectional view taken along line 1-A2 is shown in FIG.

[0042] The light emitting device shown in FIG. 1C includes a flexible substrate 201, an adhesive layer 203, an element layer 101, an adhesive layer The element layer 101 includes an insulating layer 205, a plurality of transistors, and a flexible substrate 103. a conductive layer 157, an insulating layer 207, an insulating layer 209, a plurality of light-emitting elements, an insulating layer 211, and an adhesive layer 213, an overcoat 261, a color layer 259, a light-shielding layer 257, and an insulating layer 255. do.

[0043] The conductive layer 157 is electrically connected to the FPC 108 via the connector 215. In C), an example in which the FPC 108 overlaps the flexible substrate 103 is shown, but the present invention is not limited to this. For example, as shown in FIG. 13A, a flexible substrate 10 having a smaller area than a flexible substrate 201 is used. When using FPC 103, the flexible substrate 201 and the flexible substrate 103 are not overlapped. 8 may be provided (that is, the flexible substrate 103 and the FPC 108 do not have to overlap).

[0044] The light emitting element 230 includes a lower electrode 231, an EL layer 233, and an upper electrode 235. The electrode 231 is electrically connected to a source electrode or a drain electrode of the transistor 240 . The end of the lower electrode 231 is covered with an insulating layer 211. The upper electrode 235 has a light-transmitting property and transmits the light emitted by the EL layer 233. .

[0045] A colored layer 259 is provided at a position overlapping the light emitting element 230, and a colored layer 259 is provided at a position overlapping the insulating layer 211. A light-shielding layer 257 is provided. The colored layer 259 and the light-shielding layer 257 are covered with an overcoat 261. The space between the light emitting element 230 and the overcoat 261 is filled with an adhesive layer 213. is.

[0046] Note that in the light-emitting device of one embodiment of the present invention, as shown in FIG. For example, the light emitting element 230 may have four light emitting elements, one for red, one for blue, one for green, and one for white. When one pixel is composed of sub-pixels, the colored layer 259 may not be provided for the white sub-pixel. This reduces the amount of light absorbed by the colored layer, thereby reducing the power consumption of the light-emitting device. In addition, by using different materials for the EL layer 233a and the EL layer 233b, Alternatively, a light-emitting element that exhibits a different color for each pixel may be fabricated.

[0047] The light emitting device includes a light extraction section 104 and a drive circuit section 106, and includes a plurality of transistors 240 and the like. The transistor 240 is provided over an insulating layer 205. The edge layer 205 and the flexible substrate 201 are bonded together by an adhesive layer 203. The layer 255 and the flexible substrate 103 are bonded together by an adhesive layer 105. When a film with low water permeability is used for the insulating layer 255, water can be prevented from entering the light emitting element 230 or the transistor 240. This is preferable because it can suppress the intrusion of impurities such as those mentioned above, thereby increasing the reliability of the light emitting device.

[0048] In the first specific example, the insulating layer 205, the transistor 240, and the light-emitting element are formed on a substrate having high heat resistance. 230 is prepared, the prepared substrate is peeled off, and an insulating film is formed on a flexible substrate 201 using an adhesive layer 203. A light-emitting device can be manufactured by transposing the layer 205, the transistor 240, and the light-emitting element 230. In the specific example 1, the insulating layer 255 and the colored layer 25 are formed on a highly heat-resistant substrate. The substrate is peeled off, and the flexible substrate 1 is attached to the substrate 1 using the adhesive layer 105. 255, a colored layer 259, and a light-shielding layer 257 are placed on top of the insulating layer 255. 1 shows an apparatus.

[0049] When using a material with low heat resistance (such as resin) for the substrate, the substrate may be exposed to high temperatures during the manufacturing process. Since it is difficult to form a semiconductor substrate, there are limitations on the conditions for forming transistors and insulating films on the substrate. When using a material with high water permeability (such as resin) for the substrate of a light-emitting device, It is preferable to apply high temperature to form a membrane with low water permeability. Since transistors and other devices can be manufactured on a heat-resistant substrate, they can be used at high temperatures for reliability. This allows the formation of transistors with high electrical conductivity and insulating films with sufficiently low water permeability. By transferring these to a substrate with low heat resistance, a highly reliable light-emitting device can be manufactured. Therefore, in one embodiment of the present invention, a light-emitting device that is lightweight or thin and has high reliability can be realized. The details of the preparation method will be described later.

[0050] In the specific example 1, the light from the light emitting element 230 is extracted through the flexible substrate 103. The flexible substrate 103 is made of a material that transmits visible light. It is preferable that the visible light transmittance of the adhesive layer 105 is higher than that of the adhesive layer 105. The decrease in extraction efficiency can be suppressed.

[0051] In addition, the absolute value of the difference in the thermal expansion coefficient between the flexible substrate 103 and the flexible substrate 201 is It is preferable that the thermal expansion coefficient of the flexible substrate 201 is within 10% of that of the flexible substrate 201. It is possible to suppress warping of the optical device and occurrence of cracks in the light emitting device.

[0052] 2(C), (D), and (G), the element layer 101 may be located outside the edge of the element layer 101. When the flexible substrate 201 and the flexible substrate 103 are in contact with each other, materials having similar properties are used. By using such a material, it is possible to improve adhesion. This is preferable because impurities such as oxygen and the like are less likely to enter the light emitting device, and a decrease in the reliability of the light emitting device can be suppressed. Furthermore, as shown in FIG. 2(B), (E), and (F), the adhesive layer 206 or the adhesive layer 105 or the like is used. In this way, the flexible substrate 201 and the flexible substrate 103 may be bonded together.

[0053] <Example 2> FIG. 3A shows another example of a light extraction section 104 in a light emitting device. The device is a light-emitting device that can be touched. In the following specific examples, the same as in specific example 1, The description of the configuration will be omitted.

[0054] The light emitting device shown in FIG. 3A includes a flexible substrate 201, an adhesive layer 203, an element layer 101, an adhesive layer The element layer 101 includes an insulating layer 205, a plurality of transistors, and a flexible substrate 103. a plurality of light-emitting elements, an insulating layer 211, an insulating layer 217, and an adhesive layer 213, an overcoat 261, a colored layer 259, a light-shielding layer 257, a plurality of light-receiving elements, a conductive Layer 281, conductive layer 283, insulating layer 291, insulating layer 293, insulating layer 295, and insulating layer 25 Has 5.

[0055] In the specific example 2, an insulating layer 217 is provided on the insulating layer 211. By providing the insulating layer 217, The distance between flexible substrate 103 and flexible substrate 201 can be adjusted.

[0056] FIG. 3A shows an example in which a light-receiving element is provided between the insulating layer 255 and the adhesive layer 213. Since the light receiving element can be placed over the transistor and wiring, the opening of the pixel (light emitting element) Therefore, the light emitting device can be provided with a touch sensor without reducing the display efficiency.

[0057] The light receiving element of the light emitting device is, for example, a pn-type or pin-type photodiode. In this embodiment, the light receiving element is made of a p-type semiconductor layer 271 and an i-type semiconductor A pin-type photodiode having a layer 273 and an n-type semiconductor layer 275 is used.

[0058] The i-type semiconductor layer 273 contains p-type impurities and n-type impurities. Each is 1×10 20 cm -3 The concentration is less than 100, and the photoconductivity is 100% compared to the dark conductivity. The i-type semiconductor layer 273 contains an impurity element of Group 13 or 15 of the periodic table. In other words, i-type semiconductors are those that have an insulator for the purpose of valence electron control. When pure elements are not intentionally added, it shows weak n-type electrical conductivity. 73 is a method of intentionally or unintentionally adding impurity elements that impart p-type conductivity during or after film formation. This category includes those that have been added to the above.

[0059] The light-shielding layer 257 is located closer to the flexible substrate 201 than the light-receiving element and overlaps the light-receiving element. The light-shielding layer 257 located between the light-receiving element and the adhesive layer 213 blocks the light emitted by the light-emitting element 230. This can prevent the light from reaching the light receiving element.

[0060] The conductive layer 281 and the conductive layer 283 are electrically connected to the light receiving element. It is preferable to use a conductive layer that transmits light incident on the light receiving element. It is preferable to use a conductive layer that blocks light incident on the light receiving element.

[0061] When the optical touch sensor is disposed between the flexible substrate 103 and the adhesive layer 213, the light emitting element 230 This is preferable because it is less susceptible to the effects of light emitted from the other components and can improve the S / N ratio.

[0062] The preferred configurations of flexible substrate 103 and flexible substrate 201 are the same as those in the first embodiment.

[0063] <Example 3> FIG. 3B shows another example of the light extraction portion 104 in the light emitting device. The device is a light-emitting device that can be touched.

[0064] The light emitting device shown in FIG. 3B includes a flexible substrate 201, an adhesive layer 203, an element layer 101, an adhesive layer The element layer 101 includes an insulating layer 205, a plurality of transistors, and a flexible substrate 103. a plurality of light-emitting elements, an insulating layer 211, Insulating layer 217, adhesive layer 213, colored layer 259, light-shielding layer 257, a plurality of light-receiving elements, conductive layer 2 80 , a conductive layer 281 , and an insulating layer 255 .

[0065] FIG. 3B shows an example in which a light-receiving element is provided between the insulating layer 205 and the adhesive layer 213. The element is provided between the insulating layer 205 and the adhesive layer 213 to form a transistor 240. The conductive layer and the semiconductor layer electrically connected to the light receiving element are made of the same material and in the same process as the conductive layer and the semiconductor layer. The photoelectric conversion layer that constitutes the light receiving element can be fabricated. Therefore, the fabrication process is greatly increased. A touch-operable light-emitting device can be manufactured without any need for a touch panel.

[0066] The preferred configurations of flexible substrate 103 and flexible substrate 201 are the same as those in the first embodiment.

[0067] <Example 4> FIG. 4A shows another example of a light-emitting device. The light-emitting device of FIG. 4A is a touch-operable light-emitting device. It is an optical device.

[0068] The light emitting device shown in FIG. 4A includes a flexible substrate 201, an adhesive layer 203, an element layer 101, an adhesive layer The element layer 101 includes an insulating layer 205, a plurality of transistors, and a flexible substrate 103. a conductive layer 156, a conductive layer 157, an insulating layer 207, an insulating layer 209, a plurality of light-emitting elements, an insulating layer 211, insulating layer 217, adhesive layer 213, coloring layer 259, light-shielding layer 257, insulating layer 255, Conductive layer 272, conductive layer 274, insulating layer 276, insulating layer 278, conductive layer 294, and conductive layer It has 296.

[0069] In FIG. 4A, a capacitive touch sensor is provided between an insulating layer 255 and an adhesive layer 213. The capacitive touch sensor has a conductive layer 272 and a conductive layer 274.

[0070] The conductive layer 156 and the conductive layer 157 are electrically connected to the FPC 108 via the connector 215. The conductive layer 294 and the conductive layer 296 are electrically connected to the conductive layer 274 via the conductive particles 292. Therefore, it is possible to drive a capacitive touch sensor via FPC108. This can be done.

[0071] The preferred configurations of flexible substrate 103 and flexible substrate 201 are the same as those in the first embodiment.

[0072] <Example 5> Another example of a light-emitting device is shown in FIG. 4B. The light-emitting device in FIG. 4B is a touch-operable light-emitting device. It is an optical device.

[0073] The light emitting device shown in FIG. 4B includes a flexible substrate 201, an adhesive layer 203, an element layer 101, an adhesive layer The element layer 101 includes an insulating layer 205, a plurality of transistors, and a flexible substrate 103. a conductive layer 156, a conductive layer 157, an insulating layer 207, an insulating layer 209, a plurality of light-emitting elements, an insulating layer 211, insulating layer 217, adhesive layer 213, coloring layer 259, light-shielding layer 257, insulating layer 255, The insulating layer 276 is formed on the insulating layer 278. The insulating layer 276 is formed on the insulating layer 278. .

[0074] In FIG. 4B, a capacitive touch sensor is provided between the insulating layer 255 and the adhesive layer 213. The capacitive touch sensor has a conductive layer 272 and a conductive layer 274.

[0075] As shown in FIG. 14A, the touch sensor may be provided on a flexible substrate 103. As shown in FIG. 14B, a flexible substrate 102 is provided on a flexible substrate 103. A touch sensor may be provided on the flexible substrate 102. 2 is bonded to the adhesive layer 204. The adhesive layer 204 is made of the same material as the adhesive layer 203. It is preferable to use a light-emitting device having a bent surface. This can suppress the reflection of light. In addition, as in the configuration shown in FIG. Between the conductive substrate 103 and the conductive layer 272, an insulating layer 255 and an adhesive layer 105 may be provided. .

[0076] The conductive layer 156 and the conductive layer 157 are electrically connected to the FPC 108a via the connector 215a. The conductive layer 270 is electrically connected to the FPC 108b via the connection body 215b. Therefore, the light emitting element 230 and the transistor 240 are driven via the FPC 108a, and the F A capacitive touch sensor can be driven via PC 108b.

[0077] The preferred configurations of the flexible substrate 103 and the flexible substrate 201 are the same as those in the first embodiment. A similar configuration can be applied to the flexible substrate 102. In the specific example 5, the flexible substrate 103 Light from the light emitting element 230 is extracted from the flexible substrate 102. The substrate 103 and the flexible substrate 102 are made of a material that transmits visible light.

[0078] In addition, it is preferable that the flexible substrate 102 and the flexible substrate 103 are made of the same material. This makes it possible to reduce the difference in the thermal expansion coefficient between the flexible substrate 102 and the flexible substrate 103. It is preferable to use the same material for the flexible substrate 201. 2. The difference in the thermal expansion coefficient between the flexible substrate 103 and the flexible substrate 201 can be reduced.

[0079] <Example 6> FIG. 5(A) shows another example of the light extraction portion 104 in the light emitting device.

[0080] The light emitting device shown in FIG. 5A includes a flexible substrate 103, an adhesive layer 105, an element layer 101, an adhesive layer The element layer 101 includes an insulating layer 205, a plurality of transistors, and a flexible substrate 202. a conductive layer 208; an insulating layer 209a; an insulating layer 209b; a plurality of light-emitting elements; It has an insulating layer 211 and a coloring layer 259 .

[0081] The light emitting element 230 includes a lower electrode 231, an EL layer 233, and an upper electrode 235. The electrode 231 is connected to a source electrode or a drain electrode of the transistor 240 via the conductive layer 208. The lower electrode 231 is electrically connected to the insulating layer 211. The lower electrode 231 has a light-transmitting property, and the EL layer 233 It transmits the light emitted by

[0082] A colored layer 259 is provided at a position overlapping the light emitting element 230, and the light emitted by the light emitting element 230 is The light emitting element 230 and the flexible substrate 103 are connected via the colored layer 259. The spaces between the plates 202 are filled with an adhesive layer 213 .

[0083] Note that in the light-emitting device of one embodiment of the present invention, as shown in FIG. For example, the light emitting element 230 may have four sub-lights of red, blue, green, and white. When pixels form one pixel, the colored layer 259 does not need to be provided for the white subpixel. This reduces the amount of light absorbed by the colored layer, thereby reducing the power consumption of the light emitting device. In addition, by using different materials for the EL layer 233a and the EL layer 233b, A light emitting element that exhibits a different color for each pixel may be fabricated.

[0084] In the sixth specific example, the light from the light emitting element 230 is extracted through the flexible substrate 103. The flexible substrate 103 is made of a material that transmits visible light.

[0085] In addition, the absolute value of the difference in the thermal expansion coefficient between the flexible substrate 103 and the flexible substrate 202 is 3 or the flexible substrate 202.

[0086] 2(C), (D), and (G), the element layer 101 may be located outside the edge of the element layer 101. When the flexible substrate 202 and the flexible substrate 103 are in contact with each other, materials having similar properties are used. By using such a material, it is possible to improve adhesion. This is preferable because impurities such as oxygen and the like are less likely to enter the light emitting device, and a decrease in the reliability of the light emitting device can be suppressed. Furthermore, as shown in FIG. 2(B), (E), and (F), the adhesive layer 206 or the adhesive layer 105 or the like is used. In this way, the flexible substrate 202 and the flexible substrate 103 may be bonded together.

[0087] <Example 7> FIG. 5B shows another example of a light emitting device.

[0088] The light emitting device shown in FIG. 5B includes a flexible substrate 103, an adhesive layer 105, an element layer 101, an adhesive layer 213 and a flexible substrate 202. The element layer 101 includes an insulating layer 205, a conductive layer 310a, The pixel includes a conductive layer 310 b , a plurality of light-emitting elements, an insulating layer 211 , and a conductive layer 212 .

[0089] The conductive layer 310a and the conductive layer 310b are external connection electrodes of the light emitting device, and are electrically connected to an FPC or the like. It can be effectively connected.

[0090] The light emitting element 230 includes a lower electrode 231, an EL layer 233, and an upper electrode 235. The end of the electrode 231 is covered with an insulating layer 211. The light emitting element 230 is a bottom emitter. The lower electrode 231 has a light-transmitting property and transmits the light emitted by the EL layer 233. The conductive layer 212 is electrically connected to the lower electrode 231 .

[0091] The flexible substrate 103 has a light extraction structure, such as a hemispherical lens, a microlens array, or a concave-convex structure. For example, a resin substrate may have a structured film, a light diffusing film, etc. The lens or film is then subjected to a thermal expansion treatment using a substrate having a refractive index similar to that of the lens or film. The flexible substrate 103 having a light extraction structure is formed by bonding the substrate 103 with an adhesive or the like. It is possible.

[0092] The conductive layer 212 is not necessarily required, but the voltage drop caused by the resistance of the lower electrode 231 may be reduced. For the same purpose, the upper electrode 235 and the electric A conductive layer for electrically connecting the insulating layer 211, the EL layer 233, the upper electrode 235, or the like is provided on the insulating layer 211, the EL layer 233, the upper electrode 235, or the like. It is okay.

[0093] The conductive layer 212 may be made of copper, titanium, tantalum, tungsten, molybdenum, chromium, or neodymium. Materials selected from the group consisting of , scandium, nickel, and aluminum, or alloys containing these as their main components. The conductive layer 212 can be formed as a single layer or a multilayer using a gold material or the like. For example, it can be 0.1 μm or more and 3 μm or less, and preferably 0.1 μm or more and 0. It is less than 5 μm.

[0094] A paste (such as silver paste) is used as the material for the conductive layer electrically connected to the upper electrode 235. When the conductive layer is heated, the metal constituting the conductive layer becomes granular and aggregates. As a result, the surface of the conductive layer becomes rough. For example, even if the conductive layer is formed on the insulating layer 211, the EL layer 233 However, it is difficult to completely cover the conductive layer, and it is difficult to electrically connect the upper electrode and the conductive layer. This is preferable because it makes it easier to

[0095] The preferred configurations of flexible substrate 103 and flexible substrate 202 are the same as those in the sixth embodiment.

[0096] <Examples of materials> Next, materials that can be used in the light-emitting device will be described. The explanation of the configuration will be omitted.

[0097] [Functional elements] The element layer 101 includes at least a light-emitting element. The light-emitting element is an element capable of self-emitting light. The category includes elements whose luminance is controlled by current or voltage. For example, light-emitting diodes (LEDs), organic EL elements, inorganic EL elements, etc. can be used. can.

[0098] The element layer 101 further includes transistors for driving the light-emitting elements, touch sensors, etc. It is okay to do so.

[0099] The structure of the transistor in the light-emitting device is not particularly limited. For example, a staggered transistor The transistor may be a top gate type or an inverted stagger type. The semiconductor used in the transistor may have any of the following transistor structures: The material of the body is not particularly limited, and examples thereof include silicon and germanium. At least one of indium, gallium, and zinc, such as n-Ga-Zn-based metal oxide An oxide semiconductor containing the above may be used.

[0100] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region If a semiconductor having crystallinity is used, the transistor This is preferable because it can suppress deterioration of the star characteristics.

[0101] The light-emitting element of the light-emitting device includes a pair of electrodes (a lower electrode 231 and an upper electrode 235) and the The device has an EL layer 233 provided between a pair of electrodes. One of the pair of electrodes functions as an anode. one functions as the cathode and the other as the cathode.

[0102] The light-emitting element is available in top emission structure, bottom emission structure, and dual emission structure. The electrode on the light extraction side is made of a conductive film that transmits visible light. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. I wish.

[0103] The conductive film that transmits visible light is, for example, indium oxide, indium tin oxide (ITO). Indium Tin Oxide, Indium Zinc Oxide, Zinc Oxide, Gallium Doped It can be formed using zinc oxide, etc. Also, gold, silver, platinum, magnesium, Nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or Metallic materials such as titanium, alloys containing these metallic materials, or nitrides of these metallic materials (e.g. For example, titanium nitride or the like can be used by forming it thin enough to have light transmitting properties. A laminated film of the above materials can also be used as the conductive film. For example, silver and magnesium It is preferable to use a laminated film of an alloy of this material and ITO, since the electrical conductivity can be increased. Graphene and the like may also be used.

[0104] The conductive film that reflects visible light is made of, for example, aluminum, gold, platinum, silver, nickel, tungsten, etc. Metallic materials such as zinc, chromium, molybdenum, iron, cobalt, copper, or palladium; An alloy containing these metal materials can be used. In addition, aluminum and titanium may be added. Aluminum alloys such as aluminum-nickel alloys, aluminum-neodymium alloys, etc. Alloys containing palladium (aluminum alloys), silver-copper alloys, silver-palladium-copper alloys, silver The electrode can be formed using an alloy containing silver, such as an alloy of silver and magnesium. Gold is preferred because of its high heat resistance. By laminating the oxide film, the oxidation of the aluminum alloy film can be suppressed. Examples of materials for the metal oxide film include titanium and titanium oxide. A conductive film that transmits visible light and a film made of a metal material may be laminated. For example, a film made of silver and ITO may be laminated. A laminated film, a laminated film of an alloy of silver and magnesium and ITO, etc. can be used.

[0105] The electrodes may be formed by vapor deposition or sputtering. Formed using a discharge method such as the jet method, a printing method such as the screen printing method, or a plating method. It is possible.

[0106] A voltage higher than the threshold voltage of the light emitting element is applied between the lower electrode 231 and the upper electrode 235. When the light is injected from the anode side to the EL layer 233, holes are injected from the cathode side and electrons are injected from the cathode side. The electrons and holes are recombined in the EL layer 233, and the light-emitting material contained in the EL layer 233 emits light. do.

[0107] The EL layer 233 has at least a light-emitting layer. The EL layer 233 has a positive electrode as a layer other than the light-emitting layer. Materials with high hole injection properties, materials with high hole transport properties, hole blocking materials, materials with high electron transport properties , a substance with high electron injection properties, or a bipolar substance (a substance with high electron transport properties and hole transport properties) The film may further include a layer containing a polymer (such as a polymeric material).

[0108] The EL layer 233 may be made of either a low molecular weight compound or a high molecular weight compound. The layers constituting the EL layer 233 may each be formed by deposition (vacuum deposition). The method may include a transfer method, a printing method, an ink-jet method, a coating method, etc. do.

[0109] In the element layer 101, the light emitting element is provided between a pair of insulating films having low water permeability. This makes it possible to prevent impurities such as water from entering the light emitting device, This can prevent a decrease in the reliability of the device.

[0110] Insulating films with low water permeability include those containing nitrogen and silicon, such as silicon nitride film and silicon oxynitride film. Examples of the film include a film containing nitrogen and aluminum, such as an aluminum nitride film. Alternatively, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, or the like may be used.

[0111] For example, the water vapor permeability of a low-permeability insulating film is 1×10 -5 [g / m 2 ·day] or less , preferably 1 x 10 -6 [g / m 2 ·day] or less, preferably 1×10 -7 [g / m 2 ·day] or less, and more preferably 1×10 -8 [g / m 2 ·day] or less .

[0112] [Adhesive layer] The adhesive layer may be a photo-curable adhesive such as an ultraviolet curable adhesive, a reactive curable adhesive, a heat curable adhesive, or an antibacterial adhesive. Various curing adhesives such as epoxy adhesives can be used. Resin, acrylic resin, silicone resin, phenol resin, polyimide resin, imide resin , PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA ( Ethylene vinyl acetate resins, etc. In particular, epoxy resins, etc., have low moisture permeability. The material is preferably a two-part mixed resin. Also, an adhesive sheet or the like may be used. Good too.

[0113] The resin may contain a desiccant. For example, an oxide of an alkaline earth metal (oxide Use substances that adsorb moisture by chemical adsorption, such as calcium oxide or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb moisture by physical adsorption. If a desiccant is included, impurities such as moisture may penetrate into the light emitting element. This is preferable because it can suppress the intrusion of foreign matter and improve the reliability of the light emitting device.

[0114] The adhesive layer 105 has a light-transmitting property and transmits at least the light emitted by the light-emitting element of the element layer 101. In addition, the refractive index of the adhesive layer 105 is higher than the refractive index of the air.

[0115] By mixing the above resin with a filler having a high refractive index (such as titanium oxide), Therefore, when the power consumption is the same, the light extraction efficiency can be improved. In comparison, the brightness can be increased. Also, when comparing at the same brightness, the power consumption is The force can be reduced.

[0116] The adhesive layer 105 may also include a scattering member that scatters light. For example, For 105, a mixture of the above resin and particles having a refractive index different from that of the above resin may also be used. The particles act as light scatterers.

[0117] The difference in refractive index between the resin and the particles having a refractive index different from that of the resin is preferably 0.1 or more. It is more preferable that the ratio is 0.3 or more. Specifically, the resin is an epoxy resin, an acrylic resin, or the like. Resins, imide resins, silicones, etc. can be used. Titanium oxide particles can also be used. , barium oxide, zeolite, etc. can be used.

[0118] Titanium oxide and barium oxide particles are preferred because they have a strong light scattering property. By using light, water contained in resin etc. can be absorbed, improving the reliability of the light-emitting element. It is possible to do so.

[0119] When light emitted from the light emitting element is extracted through the adhesive layer 213, the adhesive layer 213 may be formed in the same manner as the adhesive layer 105 described above. Similar configurations can be applied.

[0120] [Insulation layer] The insulating layer 205 and the insulating layer 255 can be made of an inorganic insulating material. It is preferable to use an insulating film with low water resistance because a highly reliable light emitting device can be realized using such an insulating film.

[0121] The insulating layer 207 has the effect of suppressing the diffusion of impurities into the semiconductor that constitutes the transistor. The insulating layer 207 may be a silicon oxide film, a silicon oxynitride film, a silicon nitride film, a nitride film, or a silicon nitride film. An inorganic insulating film such as a silicon oxide film or an aluminum oxide film can be used.

[0122] The insulating layer 209, the insulating layer 209a, and the insulating layer 209b are each a transistor It is preferable to select an insulating film having a planarizing function in order to reduce surface irregularities caused by the above-mentioned factors. For example, organic materials such as polyimide, acrylic, and benzocyclobutene resins can be used. In addition to the above organic materials, low-dielectric constant materials (low-k materials) can also be used. In addition, a laminated structure using insulating films and inorganic insulating films formed from these materials can be obtained. Good too.

[0123] The insulating layer 211 is provided to cover the end of the lower electrode 231. In order to improve the coverage of the EL layer 233 and the upper electrode 235 to be formed, the insulating layer 21 It is preferable that the first side wall is an inclined surface formed with a continuous curvature.

[0124] The material of the insulating layer 211 may be a resin or an inorganic insulating material. For example, polyimide resin, polyamide resin, acrylic resin, siloxane resin, epoxy resin, etc. In particular, the insulating layer 211 can be easily formed. Therefore, it is preferable to use a negative photosensitive resin or a positive photosensitive resin. .

[0125] The method for forming the insulating layer 211 is not particularly limited, but may be a photolithography method, a sputtering method, Vapor deposition method, droplet ejection method (inkjet method, etc.), printing method (screen printing, offset printing etc.) can be used.

[0126] The insulating layer 217 can be formed using an inorganic insulating material, an organic insulating material, or the like. For example, negative or positive photosensitive resins, non-photosensitive resins, etc. may be used as organic insulating materials. Alternatively, a conductive layer may be formed instead of the insulating layer 217. For example, a metal material The metal material may be titanium, aluminum, or the like. A conductive layer can be used instead of the insulating layer 217, and the conductive layer and the upper electrode 235 can be electrically connected. By adopting a configuration in which the upper electrode 235 is electrically connected, it is possible to suppress a potential drop caused by the resistance of the upper electrode 235. Furthermore, the insulating layer 217 may have a forward tapered shape or an inverse tapered shape.

[0127] The insulating layer 276, the insulating layer 278, the insulating layer 291, the insulating layer 293, and the insulating layer 295 are In particular, the insulating layer 278 and the insulating layer 295 can be formed using an inorganic insulating material or an organic insulating material. In order to reduce surface irregularities caused by the sensor element, an insulating layer having a planarizing function is used. is preferred.

[0128] [Conductive layer] The conductive layer 156, the conductive layer 157, the conductive layer 294, and the conductive layer 296 are transistors. The conductive layer constituting the light emitting element can be formed using the same material and in the same process. Layer 280 can be formed using the same materials and processes as the conductive layers that make up the transistors.

[0129] For example, the conductive layers may be made of molybdenum, titanium, chromium, tantalum, or tungsten. Metallic materials such as tin, aluminum, copper, neodymium, scandium, etc., or alloys containing these elements The conductive layer can be formed of a single layer or a multilayer structure using a gold material. Each of the electrodes may be formed using a conductive metal oxide. Indium (In 2 O 3 etc.), tin oxide (SnO 2 etc.), zinc oxide (ZnO), ITO, Indium zinc oxide (In 2 O 3 -ZnO, etc.) or these metal oxide materials with silicon oxide It is possible to use a material containing

[0130] In addition, the conductive layer 208, the conductive layer 212, the conductive layer 310a, and the conductive layer 310b are also The insulating film can be formed using the above-mentioned metal materials, alloy materials, conductive metal oxides, or the like.

[0131] The conductive layers 272 and 274, and the conductive layers 281 and 283 have a light-transmitting property. It is a conductive layer that is used to form a thin film. Examples of this are indium oxide, ITO, indium zinc oxide, and zinc oxide. For example, zinc oxide doped with gallium can be used. It can be formed using the same material and process as 72.

[0132] The conductive particles 292 are particles of organic resin or silica, etc., whose surfaces are coated with a metal material. It is preferable to use nickel or gold as the metal material because this reduces the contact resistance. In addition, particles that are coated with layers of two or more metal materials, such as nickel coated with gold, It is preferable to use:

[0133] The connector 215 is a paste or sheet made of a thermosetting resin mixed with metal particles. The metal particles can be of a material that exhibits anisotropic conductivity when bonded by heat. are particles that have layers of two or more metals, such as nickel particles coated with gold. It is preferable to use:

[0134] [Coloring layer, light-shielding layer, and overcoat] The colored layer 259 is a colored layer that transmits light of a specific wavelength band. For example, A red (R) color filter transmits light, and a green (G) color filter transmits light in the green wavelength range. A color filter, such as a blue (B) color filter that transmits light in the blue wavelength range, is used. Each color layer can be formed by using various materials and applying a printing method, an inkjet method, a photo method, etc. They are formed at desired positions by an etching method using lithography or the like.

[0135] In addition, a light-shielding layer 257 is provided between the adjacent colored layers 259. It blocks light that goes around from adjacent light emitting elements and suppresses color mixing between adjacent pixels. The end of the colored layer 259 is provided so as to overlap with the light-shielding layer 257, thereby suppressing light leakage. The light-shielding layer 257 can be made of a material that blocks light emitted from the light-emitting element. It can be formed using a metal material or a resin material containing a pigment or dye. As shown in FIG. 1C, the light shielding layer 257 is disposed in an area other than the light extraction unit 104 such as the driving circuit unit 106. It is preferable to provide the light emitting diode in the above-mentioned region, since this can suppress unintended light leakage due to guided light or the like.

[0136] In addition, an overcoat 261 may be provided to cover the colored layer 259 and the light-shielding layer 257. By providing a coating, it is possible to prevent impurities contained in the colored layer from diffusing into the organic EL element. The overcoat is made of a material that transmits light emitted from the organic EL element. For example, inorganic insulating films such as silicon nitride films and silicon oxide films, acrylic films, polyimide films, etc. An organic insulating film such as a silicon oxide film can be used, and a laminate structure of an organic insulating film and an inorganic insulating film can also be used. The overcoat 261 may be made of the insulating film with low water permeability described above.

[0137] In addition, when the material of the adhesive layer 213 is applied onto the colored layer 259 and the light-shielding layer 257, The material of the coat 261 may be a material having high wettability with respect to the material of the adhesive layer 213. For example, an oxide conductive film such as an ITO film, or a thin Ag film having a light-transmitting property is preferable. It is preferable to use a metal film of the above formula.

[0138] <Production method example> Next, a method for manufacturing a light-emitting device will be illustrated with reference to FIGS. 6 and 7. Here, a specific example 1 (FIG. 1 The light emitting device having the configuration (C) will be described as an example.

[0139] First, a peeling layer 303 is formed on a substrate 301, and an insulating layer 205 is formed on the peeling layer 303. Next, a plurality of transistors, a conductive layer 157, an insulating layer 207, and an insulating The layer 209, a plurality of light-emitting elements, and an insulating layer 211 are formed. Thus, openings are formed in the insulating layer 211, the insulating layer 209, and the insulating layer 207 (FIG. 6(A)).

[0140] In addition, a peeling layer 307 is formed on the formation substrate 305, and an insulating layer 255 is formed on the peeling layer 307. Next, a light-shielding layer 257, a coloring layer 259, and an overcoat 261 are formed on the insulating layer 255. (Figure 6(B)).

[0141] The substrates 301 and 305 are made of a glass substrate, a quartz substrate, and a sapphire substrate, respectively. A metal substrate, a ceramic substrate, a metal substrate, or the like can be used.

[0142] The glass substrate may be made of, for example, aluminosilicate glass or aluminoborosilicate glass. For example, a glass material such as barium borosilicate glass can be used. If the strain point is high, it is advisable to use one with a strain point of 730°C or higher. By adding more aO), a more practical heat-resistant glass can be obtained. etc. can be used.

[0143] When a glass substrate is used as the substrate, a silicon oxide film or an oxide When an insulating film such as a silicon nitride film, a silicon nitride film, or a silicon oxynitride film is formed, the glass This is preferable since it can prevent contamination from the substrate.

[0144] The release layer 303 and the release layer 307 are made of tungsten, molybdenum, titanium, and titanium, respectively. Ta, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, para An element selected from the group consisting of tungsten, osmium, iridium, and silicon, and an alloy material containing said element. or a compound material containing the element, and is a single layer or a laminated layer. The crystal structure of the layer may be amorphous, microcrystalline, or polycrystalline.

[0145] The release layer can be formed by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. The coating method includes a spin coating method, a droplet discharging method, and a dispensing method.

[0146] When the peeling layer has a single layer structure, it is made of a tungsten layer, a molybdenum layer, or a combination of tungsten and molybdenum. It is preferable to form a layer containing a mixture of tungsten oxide or oxide. a layer containing an oxynitride of molybdenum, a layer containing an oxide or oxynitride of molybdenum, or a layer containing tungsten Alternatively, a layer containing an oxide or oxynitride of a mixture of tantalum and molybdenum may be formed. A mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum. do.

[0147] In addition, a laminated structure of a layer containing tungsten and a layer containing an oxide of tungsten may be used as the peeling layer. In the case of forming a tungsten-containing layer, an insulating film made of oxide is formed on the tungsten-containing layer. By forming the insulating film, a layer containing tungsten oxide is formed at the interface between the tungsten layer and the insulating film. In addition, the surface of the layer containing tungsten may be subjected to a thermal oxidation treatment. , oxygen plasma treatment, nitrous oxide (N 2 O) Plasma treatment, ozone water, and other highly oxidizing solvents Alternatively, a layer containing tungsten oxide may be formed by performing a treatment with a liquid or the like. The treatment and heating process may be carried out using oxygen, nitrogen, or nitrous oxide, either alone or in combination with other gases. The above plasma treatment or heat treatment may be performed under a gas atmosphere. By changing the temperature, it is possible to control the adhesion between the release layer and the insulating layer that is formed later. do.

[0148] Each insulating layer is formed using a method such as sputtering, plasma CVD, coating, or printing. For example, the film formation temperature can be increased to 250°C or higher, up to 400°C, using the plasma CVD method. By forming the membrane as described below, it is possible to obtain a dense membrane with extremely low water permeability.

[0149] Then, the surface of the production substrate 305 on which the colored layer 259 and the like are provided or the light emitting element of the production substrate 301 is A material that will become the adhesive layer 213 is applied to the surface on which the 230, etc. are provided, and the surface is bonded to the adhesive layer 213. The fabrication substrate 301 and the fabrication substrate 305 are bonded together so that they face each other (FIG. 6(C) ).

[0150] Then, the manufacturing substrate 301 is peeled off, and the exposed insulating layer 205 and the flexible substrate 201 are bonded to each other by an adhesive layer. The substrate 305 is peeled off, and the exposed insulating layer 255 is A flexible substrate 103 is attached using an adhesive layer 105. In FIG. Although the conductive layer 157 does not overlap the flexible substrate 103, the conductive layer 157 and the flexible substrate 103 may overlap. It may be so.

[0151] For example, a peeling layer may be formed by a method using a film to be peeled off. When a layer containing a metal oxide film is formed on the side in contact with the peeled layer, the metal oxide film is crystallized. The layer to be peeled off can be peeled off from the substrate by weakening the layer. When an amorphous silicon film containing hydrogen is formed as a peeling layer between the plate and the peeled layer, the laser beam The amorphous silicon film is removed by irradiation or etching, so that the layer to be peeled off is separated from the production substrate. In addition, the peeling layer may include a layer including a metal oxide film on the side in contact with the layer to be peeled. The metal oxide film is weakened by crystallization, and a part of the peeling layer is dissolved in a solution or NF. 3 ,BrF 3 , ClF3 After removing the weakened gold by etching with fluoride gas such as Furthermore, nitrogen, oxygen, hydrogen, etc. can be used as a peeling layer. A film containing hydrogen (e.g., an amorphous silicon film containing hydrogen, a hydrogen-containing alloy film, an oxygen-containing alloy film, etc.) is used. The peeling layer is irradiated with laser light to release nitrogen, oxygen, and hydrogen contained in the peeling layer as gas. A method of accelerating the peeling between the peeled layer and the substrate may be used. The substrate was mechanically removed or the solution or NF 3 ,BrF 3 , ClF 3 Fluoride gas such as A method of removing the film by etching or the like can be used. In this case, it is not necessary to provide a peeling layer. stomach.

[0152] Moreover, by combining a plurality of the above-mentioned peeling methods, the peeling step can be carried out more easily. That is, irradiation with laser light, etching of the peeling layer with gas or solution, or using a sharp knife or knife The peeling layer and the layer to be peeled are then mechanically removed using a tool such as a brush to make them easier to peel from each other. Peeling can also be achieved by physical force (mechanically, etc.).

[0153] In addition, the layer to be peeled off can be peeled off from the substrate by penetrating a liquid into the interface between the peeling layer and the layer to be peeled off. Also, during the peeling, liquid such as water may be poured onto the film.

[0154] As for other peeling methods, when the peeling layer is made of tungsten, it is possible to use ammonia water and perchloric acid. The peeling layer may be etched with a mixed solution of hydrogen oxide and water to perform the peeling.

[0155] Note that when separation is possible at the interface between the formation substrate and the layer to be peeled off, a peeling layer does not have to be provided. For example, glass is used as the substrate, and polyimide, polyester, or polyimide is placed in contact with the glass. Forming organic resins such as olefin, polyamide, polycarbonate, and acrylic, In this case, the organic resin is heated to form an insulating film, a transistor, etc. The substrate can be peeled off at the interface between the substrate and the organic resin. A metal layer is provided, and the metal layer is heated by passing an electric current through the metal layer, and the metal layer is peeled off at the interface between the metal layer and the organic resin. In this case, the organic resin can be used as a substrate for the light-emitting device. In addition, the organic resin may be attached to another substrate with an adhesive.

[0156] Finally, the insulating layer 255 and the adhesive layer 213 are opened to expose the conductive layer 157 ( In addition, in the case where the flexible substrate 103 overlaps with the conductive layer 157, The flexible substrate 103 and adhesive layer 105 are also opened to expose 57 (FIG. 7(C)). The means for forming the opening is not particularly limited, and examples thereof include laser ablation, etching, ion beam, and the like. A beam sputtering method or the like may be used. Alternatively, an incision may be made using a cutting tool and a portion of the membrane may be peeled off using physical force.

[0157] In this manner, a light-emitting device can be manufactured.

[0158] As described above, the light emitting device of the present embodiment includes the flexible substrate 103 and the flexible substrate 20. The touch sensor is composed of two substrates, a flexible substrate 201 and a touch sensor. Even if the number of substrates is small, it can be constructed with only two substrates. It is easy to improve the extraction efficiency and the clarity of the display. Therefore, for the same power consumption, When comparing with the same brightness, the brightness can be increased. The power can be lowered.

[0159] Although the light-emitting device having the light-emitting element has been illustrated in this embodiment mode, the present invention is not limited thereto. The flexible substrate, which is a feature of one aspect of the present invention, can be used in devices including various semiconductor devices. For example, the following elements or devices may be used as substrates: A flexible substrate, which is a feature of one embodiment of the present invention, can be used. For example, an EL element (organic and inorganic) EL elements, organic EL elements, inorganic EL elements, LEDs (white LEDs, red LEDs) , green LED, blue LED, etc.), transistors (transistors that emit light according to the current) , electron emission elements, liquid crystal elements, electronic ink, electrophoretic elements, grating light valves ( GLV), plasma display (PDP), MEMS (Micro-Electro-Mechanical Systems) Digital Micromirror Device (DMD), DMS (Digital Micromirror System) Micro Shutter), MIRASOL (registered trademark), IMOD (Interference Modulation elements, electrowetting elements, piezoelectric ceramic displays Carbon nanotubes, etc., have electromagnetic effects that improve contrast, brightness, and reflectance. In addition, display devices using electron-emitting devices include display media in which the transmittance changes. One example is a field emission display (FED) or SED type flat panel display. Spray (SED: Surface-conduction Electron-emissive An example of a display device using a liquid crystal element is LCD (transmissive LCD, semi-transmissive LCD, reflective LCD) LCD displays, direct-view LCD displays, and projection LCD displays. In addition, electronic paper, which is an example of a display device using electronic ink or an electrophoretic element, etc.

[0160] One example of the display method for electronic paper is the molecular display (optical anisotropy, dye molecular orientation, etc.), and those displayed by particles (electrophoresis, particle migration, particle rotation, phase change, etc.) (e.g., those that are displayed by the movement of one edge of the film, and those that are displayed by the color development / phase change of molecules. These are indicated by the light absorption of molecules, or by spontaneous electron-hole combinations. The display method may be electronic paper. Examples of the methods include microcapsule electrophoresis, horizontal migration electrophoresis, and vertical migration electrophoresis. Electrophoresis, spherical twist ball, magnetic twist ball, cylindrical twist ball method, charged toner , electronic powder, magnetic migration type, magnetic thermal type, electrowetting, light scattering (transparent / white Clouding), cholesteric liquid crystal / photoconductive layer, cholesteric liquid crystal, bistable nematic liquid Crystals, ferroelectric liquid crystals, dichroic dyes and liquid crystal dispersions, movable films, color development and erasure by leuco dyes, Photochromic, electrochromic, electrodeposition, flexible organic However, there are many types of electronic paper and its display methods, including but not limited to these. Here, by using microcapsule electrophoresis, This can solve the aggregation and precipitation of electrophoretic particles. It has advantages such as high efficiency, wide viewing angle, low power consumption, and memory properties.

[0161] This embodiment mode can be combined with other embodiment modes as appropriate.

[0162] (Embodiment 2) In this embodiment, electronic devices to which one embodiment of the present invention is applied will be described with reference to FIGS. explain.

[0163] The electronic device of the present embodiment has a structure in which a band-shaped highly flexible region and a band-shaped less flexible region are alternately arranged. The electronic device can be folded by bending it at the highly flexible region. The electronic device of the present embodiment is highly portable when folded, and is easy to carry when unfolded. The wide, seamless light-emitting area provides excellent visibility.

[0164] In the electronic device of this embodiment, the highly flexible area can be folded either inward or outward. It can also be folded.

[0165] In this specification, the term "inward bending" refers to bending the light emitting surface of the light emitting device inward. When the light emitting surface of the light emitting device is bent outward, it is called "outward bending." The light-emitting surface of a light-emitting device refers to the surface through which light from a light-emitting element is extracted.

[0166] When the electronic device of the present embodiment is not in use, the light emitting device is bent so that the light emitting surface of the light emitting device faces inward. This helps prevent scratches and dirt on the light-emitting surface.

[0167] When using the electronic device of the present embodiment, it can be unfolded to provide a seamless, wide light-emitting area. The entire light emitting device may be used, or the light emitting surface of the light emitting device may be bent to face outward. A part of the light emitting area may be used. The light emitting area is folded and cannot be seen by the user. This makes it possible to reduce the power consumption of electronic devices.

[0168] In the following, a flexible sheet having two band-shaped regions of high flexibility and three band-shaped regions of low flexibility will be described. An electronic device that can be folded into three will be used as an example.

[0169] FIG. 8(A) shows the electronic device in an unfolded state. FIG. 8(B) shows the electronic device in an unfolded or folded state. Figure 8(C) shows the electronic device in the process of changing from one of the folded states to the other. FIG. 9 is a perspective view showing each component of the electronic device. FIG. 10(B) is a plan view of the light-emitting surface of the electronic device, and FIG. 10(C) is a plan view of the surface opposite to the light-emitting surface of the electronic device. 10(C) and (D) are plan views of the electronic device of FIG. 10(A) in the direction of the arrow. FIG. 10(E) is an example of a side view of the portion of the battery 10 taken along the dashed line AB in FIG. 10(A). FIG.

[0170] The electronic device shown in Figures 8(A) to (C) has a flexible light emitting device 11. The light-emitting device according to one embodiment of the present invention described in Embodiment 1 can be applied to the light-emitting element 11. The light-emitting device according to one embodiment of the present invention is bent with a curvature radius of 1 mm or more and 100 mm or less, for example. Therefore, it is suitable for use in electronic devices that are folded one or more times by bending inward or outward. It is possible.

[0171] The electronic device shown in FIGS. 8(A) to 8(C) further includes a plurality of support panels 15a and a plurality of support panels Each of the support panels 15a and 15b has a lower flexibility than the light emitting device 11. The support panels 15a are spaced apart from one another. The support panels 15b are spaced apart from one another. is doing.

[0172] As shown in FIG. 10A, the electronic device has a highly flexible region E1 and a less flexible region E 2. The highly flexible and less flexible regions are formed in stripes. In this embodiment, a plurality of highly flexible regions and a plurality of less flexible regions are mutually Although an example in which the regions are parallel is shown, the regions do not have to be arranged in parallel.

[0173] The highly flexible region E1 in the electronic device has at least a flexible light emitting device. Light-emitting devices using organic EL elements are thin and lightweight, in addition to being highly flexible and impact-resistant. This is preferred because it allows for quantification.

[0174] The region E2 with low flexibility in the electronic device includes at least a flexible light-emitting device and It is sufficient if the light device is overlapped with a support panel that is less flexible than the light device.

[0175] The support panel is provided on at least one of the light emitting surface side and the surface side opposite to the light emitting surface of the light emitting device. It would be good if it was.

[0176] As shown in FIG. 10C, the light emitting surface side and the light emitting surface side of the light emitting device are When the light emitting device is provided with a support panel on both sides of the light emitting device, the light emitting device is sandwiched between the pair of support panels. This increases the mechanical strength of less flexible areas, making electronic devices less susceptible to damage. preferable.

[0177] In addition, instead of the support panels 15a and 15b, the support panel 15 shown in FIG. 10(D) is used. The light emitting device 11 may be sandwiched between the support panels 15 .

[0178] When a support panel is provided only on the light-emitting surface side or the surface side opposite to the light-emitting surface of the light-emitting device, the electronic device For example, a plurality of support panels 15a may be used. Alternatively, the electronic device may have only a plurality of support panels 15b.

[0179] The highly flexible region E1 and the less flexible region E2 are arranged so as to define a region that is more flexible than the light emitting device and the support panel. It is preferable that the insulating layer has a highly flexible protective layer on top of the insulating layer. The region E1 is flexible and has high mechanical strength, so that the electronic device is less likely to be damaged. In other words, even in highly flexible areas, the electronic device can be prevented from being damaged by external forces, etc. It is possible to make the structure less likely to break even if the structure is deformed.

[0180] For example, the thicknesses of the light emitting device, the support panel, and the protective layer are the thickest, The thinnest configuration of the light emitting device is preferred. Alternatively, for example, the thickness of the light emitting device, the support panel, the protective layer, etc. The flexibility of each of the structures is such that the support panel has the lowest flexibility and the light emitting device has the highest flexibility. This configuration is preferable. By making it possible to bend the material in the highly flexible region, the difference in the flexibility becomes large. This can prevent bending in areas with low mechanical strength, thereby improving the reliability of electronic devices. It is also possible to prevent the electronic device from bending unintentionally.

[0181] When a light emitting device has a protective layer on both the light emitting surface side and the surface side facing the light emitting surface, a pair of protective layers Since the light emitting device can be sandwiched by the This is preferable as it makes it less likely to happen.

[0182] For example, as shown in FIG. 10C, in the region E2 having low flexibility, a pair of protective layers 13a, 13b is disposed between a pair of support panels 15a and 15b, and a pair of light emitting devices (not shown) are disposed between the support panels 15a and 15b. It is preferable that the protective layer 13a is located between the protective layers 13a and 13b.

[0183] Alternatively, as shown in FIG. 10(D), in the region E2 with low flexibility, a pair of protective layers 13a, 13b is disposed between the support panels 15, and a light emitting device (not shown) is disposed between the pair of protective layers 13a, It is preferable that it is located between 13b.

[0184] By providing a protective layer only on the light-emitting surface side or the surface side opposite to the light-emitting surface of the light-emitting device, electronic devices can be more For example, the protective layer 13a is not used, and the protective layer 1 is not used. The electronic device may have only 3b.

[0185] In addition, if the protective layer 13a on the light-emitting surface side of the light-emitting device is a light-shielding film, external light may be emitted to the non-light-emitting region of the light-emitting device. This can suppress the light irradiation of the non-light emitting area. This is preferable because it can suppress light deterioration of transistors and the like.

[0186] As shown in FIG. 10(E), an opening in the protective layer 13a provided on the light-emitting surface side of the light-emitting device 11 The light emitting region 11a of the light emitting device is overlapped with the non-light emitting region 11b which surrounds the light emitting region 11a in a frame shape. The protective layer 13a is provided so as to overlap the protective layer 13a. The protective layer 13b is provided so as to overlap the light emitting region 11a and the non-light emitting region 11b. The layer 13b is provided over a wider area on the surface facing the light emitting surface, and more preferably over the entire surface. This makes it possible to better protect the light emitting device and improve the reliability of the electronic device. do.

[0187] The protective layer or support panel can be made of plastic, metal, alloy, rubber, etc. By using plastic or rubber, a protective layer or support panel that is lightweight and resistant to damage can be obtained. For example, a silicone rubber protective layer and a stainless steel support panel are used. Or aluminum may be used.

[0188] It is also preferable to use a highly tough material for the protective layer and the support panel. It is possible to realize electronic devices that are resistant to impact and are difficult to break. For example, By using metal and alloy materials, it is possible to realize electronic devices that are lightweight and not easily damaged. For the same reason, it is preferable to use a highly tough material for the substrate constituting the light emitting device. It is.

[0189] When the protective layer or the support panel located on the light-emitting surface side does not overlap with the light-emitting area of ​​the light-emitting device, The protective layer or support panel located on the light-emitting surface side is transparent to at least a part of the light-emitting area. When the light emitting surface overlaps with the light emitting device, it is preferable to use a material that transmits light emitted from the light emitting device. The light transmittance of the protective layer and the support panel located on the surface opposite to the light transmitting layer does not matter.

[0190] When bonding any two of the protective layer, support panel, and light-emitting device, various adhesives are used. For example, resins that cure at room temperature, such as two-liquid mixed resins, photocurable resins, and heat curable resins can be used. Resins such as curable resins can be used. Also, a sheet-like adhesive can be used. In addition, screws penetrating two or more of the protective layer, the support panel, and the light-emitting device, and clamping Each component of the electronic device may be fixed using pins, clips, etc.

[0191] The electronic device of the present embodiment has one light emitting device (one light emitting region) at the folded portion. For example, the hidden area can be made non-luminous by folding it. In this case, only the exposed area may emit light. This reduces the power consumed by the area not used by the user. The force can be reduced.

[0192] The electronic device of the present embodiment determines whether each highly flexible region is folded or not. For example, a switch, a MEMS pressure sensor, or a pressure sensor It can be configured using a filter, etc.

[0193] Although the electronic device having two highly flexible regions has been described above as an example, the present invention is not limited to this. For example, as shown in FIG. 11(A), at least one highly flexible region E1 is provided. It is sufficient for the electronic device to have three highly flexible regions E1 and be capable of being folded into four (FIG. 1 1(B)) and an electronic device that can be folded into five parts and has four highly flexible regions E1 (FIG. 11( C)) is also an embodiment of the present invention.

[0194] This embodiment mode can be combined with other embodiment modes as appropriate.

[0195] (Embodiment 3) In this embodiment, electronic devices and lighting devices to which one embodiment of the present invention is applied will be described with reference to FIGS. This will be explained using:

[0196] When the light-emitting device of one embodiment of the present invention is used to manufacture electronic devices and lighting devices, the reliability of the electronic devices and lighting devices can be improved. In addition, by using the light-emitting device according to one embodiment of the present invention, it is possible to improve reliability. Flexible electronic devices and lighting devices can be created.

[0197] The electronic device may be, for example, a television device (also called a television or television receiver). (c), computer monitors, digital cameras, digital video cameras, digital Photo frames, mobile phones (also called mobile phones or mobile phone devices), portable game machines, Examples include portable information terminals, audio playback devices, and large game machines such as pachinko machines.

[0198] In addition, since the light-emitting device of one embodiment of the present invention has flexibility, it can be attached to the inner or outer wall of a house or a building. , or may be incorporated along curved surfaces in the interior or exterior of a vehicle.

[0199] FIG. 12A shows an example of a mobile phone. A mobile phone 7400 includes a housing 7401. In addition to the display unit 7402, an operation button 7403, an external connection port 7404, The mobile phone 7400 is equipped with a speaker 7405, a microphone 7406, and the like. The display device according to one embodiment of the present invention is used for the display portion 7402. This makes it possible to provide highly reliable mobile phones with curved displays with a high yield rate. do.

[0200] In the mobile phone 7400 shown in FIG. 12A, when a user touches a display portion 7402 with a finger or the like, information is displayed. You can also make calls, enter text, or do any other kind of An operation can be performed by touching the display portion 7402 with a finger or the like.

[0201] In addition, by operating the operation button 7403, the power can be turned on and off, and the display unit 7402 can be You can change the type of image displayed. For example, from the email composition screen, You can switch to the menu screen.

[0202] FIG. 12B shows an example of a wristband-type portable display device. 00 includes a housing 7101, a display unit 7102, an operation button 7103, and a transmission / reception device 7104. Equipped with.

[0203] The portable display device 7100 can receive a video signal by a transmitting / receiving device 7104. Video can be displayed on the display unit 7102. Audio signals can also be sent to other receiving devices. It is also possible.

[0204] In addition, the operation button 7103 can be used to turn the power on and off and to switch the image to be displayed. , or adjust the volume of the audio.

[0205] Here, the light-emitting device of one embodiment of the present invention is incorporated in the display portion 7102. According to one embodiment, a highly reliable portable display device having a curved display portion is provided with a high yield. Can be provided.

[0206] 12(C) to (E) show examples of the lighting device. 210 and the lighting device 7220 each include a base 720 having an operation switch 7203. 1 and a light emitting part supported by a base part 7201.

[0207] The lighting device 7200 shown in FIG. 12C includes a light-emitting unit 7202 having a wavy light-emitting surface. This makes it a highly designed lighting device.

[0208] The light-emitting portion 7212 of the lighting device 7210 shown in FIG. 12(D) has two convexly curved The light emitting parts are arranged symmetrically. It can illuminate the direction.

[0209] The lighting device 7220 shown in FIG. 12(E) includes a light-emitting portion 7222 that is curved in a concave shape. Therefore, in order to collect light emitted from the light emitting unit 7222 on the front surface of the lighting device 7220, It is suitable for brightly lighting an area.

[0210] In addition, the light-emitting units of the lighting devices 7200, 7210, and 7220 Since it is flexible, the light-emitting part can be made of plastic materials or movable frames. The light emitting surface of the light emitting portion may be freely curved depending on the application.

[0211] In the above, the illumination device in which the light-emitting unit is supported by the base is illustrated. The housing can be fixed to the ceiling or hung from the ceiling. The surface can be curved, so the light-emitting surface can be curved concavely to illuminate a specific area. It can also illuminate an entire room by curving the light-emitting surface convexly.

[0212] Here, each light-emitting portion incorporates a light-emitting device according to one aspect of the present invention. This makes it possible to provide a lighting device having a curved light-emitting portion and high reliability with a high yield.

[0213] FIG. 12F shows an example of a portable display device. The display device 7300 has a housing 7 301, display unit 7302, operation button 7303, drawer member 7304, control unit 7305 Equipped with.

[0214] The display device 7300 is a flexible display unit wound in a roll in a cylindrical housing 7301. Equipped with 7302.

[0215] In addition, the display device 7300 can receive a video signal through the control unit 7305. The control unit 7305 is equipped with a battery. In addition, a terminal unit for connecting a connector to the control unit 7305 is provided, and video signals and power can be transmitted by wire. Alternatively, the power may be supplied directly from the outside.

[0216] In addition, the operation button 7303 can be used to turn the power on and off and to switch the image to be displayed. etc. can be carried out.

[0217] FIG. 12G shows a display in a state where the display unit 7302 is pulled out by a pull-out member 7304. In this state, an image can be displayed on the display unit 7302. The operation button 7303 arranged on the surface of the housing 7301 allows easy operation with one hand. In addition, as shown in FIG. 12F, the operation button 7303 can be placed in the center of the housing 7301. By placing it close to one side, it can be easily operated with one hand.

[0218] Note that the display unit 7302 is fixed so that the display surface of the display unit 7302 becomes flat when the display unit 7302 is pulled out. In order to secure the display portion 7302 in place, a frame for reinforcing the display portion 7302 may be provided on the sides of the display portion 7302.

[0219] In addition to this configuration, a speaker is provided on the housing, and the device can be operated by receiving an audio signal together with the video signal. The configuration may be such that audio is output.

[0220] The light-emitting device according to one embodiment of the present invention is incorporated in the display portion 7302. Lighter and more reliable light emitting devices can be provided with good yield.

[0221] This embodiment mode can be freely combined with other embodiment modes. [Explanation of symbols]

[0222] 11 Light emitting device 11a Light-emitting area 11b Non-luminous area 13a Protective layer 13b Protective layer 15 Support Panel 15a Support Panel 15b Support Panel 101 Element layer 102 Flexible substrate 103 Flexible substrate 104 Light extraction section 105 Adhesive layer 106 Drive circuit section 108 FPC 108a FPC 108b FPC 156 Conductive Layer 157 Conductive Layer 201 Flexible substrate 202 Flexible substrate 203 Adhesive layer 204 Adhesive layer 205 Insulating layer 206 Adhesive layer 207 Insulating Layer 208 Conductive Layer 209 Insulating Layer 209a Insulating layer 209b Insulating layer 211 Insulating layer 212 Conductive layer 213 Adhesive layer 215 Connectors 215a Connector 215b Connector 217 Insulating Layer 230 Light-emitting element 231 Lower Electrode 233 EL layer 233a EL layer 233b EL layer 235 Upper electrode 240 Transistor 255 Insulation Layer 257 Light blocking layer 259 Colored layer 261 Overcoat 270 Conductive Layer 271 p-type semiconductor layer 272 Conductive Layer 273 i-type semiconductor layer 274 Conductive Layer 275 n-type semiconductor layer 276 Insulating Layer 278 Insulating Layer 280 Conductive Layer 281 Conductive Layer 283 Conductive Layer 291 Insulating Layer 292 Conductive Particles 293 Insulating Layer 294 Conductive Layer 295 Insulating Layer 296 Conductive Layer 301 Preparation Board 303 Peeling layer 305 Preparation Board 307 Peeling layer 310a conductive layer 310b conductive layer 7100 Portable display devices 7101 Case 7102 Display section 7103 Operation button 7104 Transmitting and receiving equipment 7200 Lighting Equipment 7201 Daibu 7202 Light emitting part 7203 Operation switch 7210 Lighting equipment 7212 Light emitting part 7220 Lighting Equipment 7222 Light emitting part 7300 display device 7301 Case 7302 Display section 7303 Operation button 7304 Materials 7305 Control Unit 7400 Mobile Phone 7401 Case 7402 Display section 7403 Operation button 7404 External connection port 7405 Speaker 7406 Mike

Claims

1. A flexible light-emitting panel; a first protective layer having a lower flexibility than the light-emitting panel and fixed to a rear surface of the light-emitting panel; A second protective layer disposed on a front surface side of the light-emitting panel; a first support panel, a second support panel, a third support panel, and a fourth support panel that support the light-emitting panel; the first protective layer has a region located between the first support panel and the light-emitting panel and a region located between the second support panel and the light-emitting panel, the second protective layer has a region located between the third support panel and the light-emitting panel and a region located between the fourth support panel and the light-emitting panel, the light-emitting panel has a pixel portion and a region surrounding the pixel portion in a frame shape, a region surrounding the pixel portion in a frame shape includes a driver circuit for driving the pixel portion, In a plan view, the first protective layer overlaps with the pixel unit and a region surrounding the pixel unit in a frame shape, In a plan view, the second protective layer overlaps with a region that surrounds the pixel unit in a frame shape, but does not overlap with the pixel unit; the third support panel covers a first side, a part of a second side, and a part of a third side of the light-emitting panel on a display surface side of the light-emitting panel, the second support panel covers a part of a second side, a part of a third side, and a fourth side on a display surface side of the light-emitting panel, The electronic device can be folded so that a display surface of the light-emitting panel faces inward.

2. In claim 1, The electronic device, wherein the second protective layer has an area that overlaps with the first support panel and an area that overlaps with the second support panel.

3. In claim 1 or 2, The light-emitting panel has a touch panel function.

Images