Optoelectronic structure element, optoelectronic arrangement structure and method

Abstract

To provide a technique that relates to various aspects relating to an optoelectronic structure element or an arrangement structure comprising such a structure element for various applications, in particular in the automotive industry and for visual display devices, that can be easily produced and allow faster switching times.SOLUTION: There is provided an optoelectronic arrangement structure comprising: a substrate; and at least one optoelectronic structure element fixed to one side of the substrate. Therein: a side facing the substrate includes a first electrical contact; a side not facing the substrate includes a second electrical contact electrically connected to an electrical control contact on a surface of the substrate via a mirror coating; and the mirror coating at least partially covers the surface of the substrate facing the at least one structure element.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] This patent application claims the priority of the following German applications: German Patent Application Publication No. 102019103365.9 of February 11, 2019, German Patent Application Publication No. 102019110499.8 of April 23, 2019, and German Patent Application Publication No. 102019111767.4 of May 7, 2019, as well as the priority of International Application PCT / EP2020 / 052191 of January 29, 2020, the disclosures of which are incorporated herein by reference.

[0002] Background Art Today, light-emitting diodes or common optoelectronic structural elements have become indispensable in a very wide variety of applications. They are used not only in displays and common video display devices, but also in large-area display devices, advertising spaces or video walls. However, systems using such structural elements are increasingly being used in lighting areas in office areas or private spaces. This is because various creative lighting concepts can be realized by individually driving and controlling them.

[0003] Furthermore, there are also typical lighting applications such as in the automotive field. In addition to display devices, for example, lighting fixtures such as headlights that can be realized by a pixelated array can also be mentioned. These lighting fixtures need to be designed to be able to guide light by adding an optical system and, if necessary, not to dazzle the eyes of other road users. Many of these applications are common in that a large number of optoelectronic structural elements are arranged in rows and columns on a substrate or backplane, and in this case, additional means may be applied for guiding and extracting light.

[0004] Furthermore, it is required to achieve the best possible light extraction while maintaining low power consumption at the same time. Therefore, the light generated by the optoelectronic component needs to be extracted and emitted as efficiently as possible. The following applications deal with this subject in view of the above-mentioned use.

[0005] Summary Various designs based on vertical or horizontal LED structures are suitable for the manufacture of displays, display devices and lighting fixtures. In this case, it is particularly important to have a short switching time and at the same time sufficient current carrying capacity. At the same time, the emitted light should already be collimated as much as possible when it exits.

[0006] When a horizontal optoelectronic structure element is used, usually both contacts of the anode and the cathode are realized using separate metal lead frames (Zuleitungsbahnen), and both contacts are located on the underside of the chip. For both the cathode and the anode, metal lead frames are wired to each pixel. When a vertical optoelectronic structure element chip is used, the anode contact located on the lower surface of the chip is realized using a separate metal lead frame, while the cathode contact located on the upper side of each chip is realized by a common cathode. In any case, in order to keep the parasitic capacitance low, it is necessary to make the lead wires as short as possible.

[0007] As described above, the optoelectronic structure elements are manufactured monolithically or individually and then post-processed on a substrate. The backplane (in the case of a backplane assembly; in a monolithic structure, this may also serve as the substrate, or the growth substrate may be replaced by the backplane) incorporates drive control electronic circuits. With regard to drive control, a passive matrix backplane equipped with an IC circuit and an active matrix backplane equipped with a TFT circuit are distinguished. In a passive matrix backplane equipped with an IC circuit for driving and controlling light-emitting diodes, usually, the cathode and anode lead wires are wired directly to the pixels or to the sub-pixels. The drive control of the pixels or sub-pixels is performed via a micro-integrated circuit.

[0008] When an active matrix backplane is implemented, individual pixels are driven and controlled using an integrated TFT circuit (TFT = thin film transistor). In this application, various arrangement structures have been proposed that can shorten the lead wires to obtain a high switching time. Furthermore, a common connection for each of the cathode and anode is realized. The arrangement structures and concepts disclosed herein are suitable for various applications. These include, for example, applications for automotive, display devices such as displays and video walls, and generally various lighting fixtures. In this case, the optoelectronic structure elements may be configured separately or monolithically, and it is essential that their edge length is in the range of, for example, 200 μm to 500 μm or more than 500 μm. Within this range, the processing or transfer of the structure elements can be easily performed.

[0009] For certain applications, directional light or radiation is important. In these applications, in addition to preventing crosstalk between adjacent elements, the light should be made directional, i.e., the light should be irradiated in a specific direction. In the automotive field, this aspect is important because the resulting light cone can potentially be controlled by the upstream optical system. Scattered light can cause glare on the oncoming vehicle side, but it is reduced by directional radiation.

[0010] On the other hand, in a display or many surface displays, a defined radiation pattern should be achieved. The light generated in the optoelectronic structure element or LED should not interact with adjacent optoelectronic structure elements, and on the other hand, it is also desirable to extract the light in order to optimize the light efficiency at a predetermined current intensity. In the following aspects, various measures are presented to improve the radiation pattern of the optoelectronic structure element or the arrangement structure including such an element by means of a reflective layer and other measures.

[0011] Some of the optoelectronic structure elements emit light laterally. This effect is often not desirable because crosstalk occurs between adjacent structure elements, causing interference and other effects that deteriorate the visual impression. In addition, scattered light may be directed in an undesirable direction by lenses and other light shaping elements in some cases. Finally, it is desirable to make as large a proportion as possible of the generated light available. Moreover, in many applications, a Lambertian radiation pattern of the display is required. That is, in particular, it is desirable that the display has the same brightness when viewed from any direction. Strong end-face emission of the chip results in a non-Lambertian radiation pattern.

[0012] The optoelectronic structure element is realized in particular in a vertical design, i.e., a design with one contact each on the top and bottom surfaces of the chip. In order to electrically connect a so-called vertical LED to the substrate, a so-called "top contact" must be deposited and patterned on the second contact of the LED (which is not facing the substrate or is on the upper side). In this case, a planarization layer and / or a passivation layer are similarly used around the chip. However, it should be noted here that the present invention, particularly the reflective structure, is not limited to the structural form of a vertical optoelectronic structure element. Rather, the following aspects, for example, the arrangement structure of the reflector structure, can also be realized in an optoelectronic structure element with contacts arranged on the same side (so-called horizontal LED).

[0013] According to a first aspect, a method for manufacturing an optoelectronic arrangement structure having at least one optoelectronic structure element is proposed. This structure element may in particular be a light-emitting diode, and its light exits at least partially laterally with a component parallel to the active layer. In this method, a first contact region and a second contact region are patterned on one side of the substrate. The optoelectronic structure element is similarly applied onto the substrate or is generated on the substrate by patterning from a plurality of semiconductor layers there.

[0014] Subsequently, a first metal mirror layer and a second metal mirror layer are applied. The first metal mirror layer electrically connects the contact layer provided on the second contact of the optoelectronic structure element to the second contact region, and the second metal mirror layer is formed on a reflector structure arranged on the substrate. The reflector structure can be obtained from a later patterned planarization layer. In some aspects, the reflector structure surrounds the optoelectronic structure element at a distance. In another aspect, a part of the planarization layer may be patterned to surround the optoelectronic structure element.

[0015] In one aspect, the proposed arrangement structure has, in particular, a optoelectronic structure element electrically contacted by a first metal mirror layer and a reflector structure coated with a second metal mirror layer that particularly surrounds it.

[0016] According to a second aspect, an arrangement structure having at least one optoelectronic structure element is proposed, in which a first contact of a vertical optoelectronic structure element is connected to a first contact region on one side of a substrate. On the same side of the substrate, a second contact of a vertical optoelectronic structure element not facing the substrate is connected to a second contact region by a contact layer, in particular a semi-transparent contact layer and a first metal mirror layer. Furthermore, a reflector structure having a second metal mirror layer on its side flanks and surrounding the optoelectronic structure elements spaced apart is formed. In some aspects, the reflector structure includes reflective sidewalls. These can be angled to change the direction of light. In other aspects, the sidewalls may have a non-linear gradient, for example, a square or parabolic gradient.

[0017] By utilizing the processing of the second contact or top contact, a light extraction structure can be created on the substrate in the same step. In this case, in particular, the top contact is formed by the second contact of the optoelectronic structure element, the contact layer, the first metal mirror layer, and the second contact region. Here, the contact layer provided at the second contact of the optoelectronic structure element is electrically connected to the second contact region by the first metal mirror layer.

[0018] Here, a light extraction structure is formed by a reflector structure coated with a second metal mirror layer. Further light extraction structures may be provided by lenses arranged in the beam path of the arrangement structure, in particular of the optoelectronic structure elements. In this way, the lenses are arranged such that light hits the lens after being reflected by the structure or directly from the structure element.

[0019] To create a top contact, first the optoelectronic structure element is embedded in a planarization layer. This can be exposed by photolithography in a second contact on the substrate or a second contact area for the top contact (upper contact). This patterning process is utilized in the same step to form a reflector, particularly the structure of the reflector, on the substrate from the planarization layer. After depositing a transparent contact layer, patterning application of a metal mirror layer can be carried out as a metal bridge between the second contact and the second contact area. This is necessary because the contact layer is not suitable for filling large height differences. Using this metallization process, the reflector structure can be simultaneously mirror-coated.

[0020] In this way, since a separate lithography process for forming a reflector as in the prior art is not required, the manufacturing of the display can be carried out inexpensively and quickly. By preparing a reflector from a planarization layer having a metal mirror layer of the top contact, the efficiency and contrast can be improved, and the radiation pattern of the display can be improved by saving the additional processing effort.

[0021] The above-described aspects regarding the reflective layer or mirror, as already shown, can also be applied or added to other design LEDs and optoelectronic structure elements, for example, vertical LEDs having a circumferential structure shown below.

[0022] According to a first aspect, a device is proposed that includes a substrate and an optoelectronic structure element fixed to one side of the substrate. This has an electrical contact that is electrically connected to an electrical control contact by a mirror coating on the side not facing the substrate, and the mirror coating at least partially covers the substrate surface facing the structure element.

[0023] Thus, the mirror coating serves two functions. On the one hand, it plays a role in directing light in the emission direction, and on the other hand, it is responsible for current transport. With a common cover contact or a common cover electrode, high-speed switching times for various applications such as displays can be achieved. This makes it possible to provide, for example, the concept of a pulse-width modulation dimming device that improves panel efficiency, along with improvements in optical parameters such as the angle dependence and contrast of light emission.

[0024] In a method of manufacturing such an arrangement structure, first, a substrate having a large number of contacts on its surface is prepared, and an optoelectronic structure element is mounted on one of these contacts. For this mounting, conventional transfer and mounting techniques, which are also partially presented in this disclosure, can be used. The optoelectronic structure element is mounted as a vertical structure element and also includes contacts on one substrate surface. On the substrate surface, a mirror coating layer is formed that is electrically connected to the electrical control contacts on the substrate surface and at least partially covers the surface. In the final step, a transparent cover electrode that is in electrical contact with the mirror coating layer is formed over further contacts.

[0025] Furthermore, by using the mirror coating, improvements such as current diffusion, improvement of current transport ability, and shortening of switching time can also be realized in combination with the cavity structure. In this case, such a cavity also plays a role in improving the extraction efficiency, the angle dependence of light emission, and the contrast. For this purpose, in some embodiments, the substrate includes a convex portion surrounding the optoelectronic structure element. Alternatively, instead of the convex portion, a cavity may be provided on the substrate surface where the optoelectronic structure element is disposed. In addition to one optoelectronic structure element, three optoelectronic structure elements may also be surrounded or arranged collectively to form pixels as sub-pixels.

[0026] In any case, the optionally chamfered side surfaces of the cavity or the convex portion are provided with a mirror coating. This structure is the same as the above. The angles of these side surfaces with respect to the substrate surface can take different values according to the desired characteristics. In particular, this angle can also be changed so that the side flanks become parabolic or other non-linear gradients. In some embodiments, the mirror circuit structure disclosed in the present application can be used. The height of the convex portion or the depth of the cavity is selected such that the optoelectronic structure element is at the same height as the upper surface of the convex portion or the cavity. Thereby, the cover electrode can be closed. This is particularly advantageous when the mirror coating is disposed on the upper surface and the cover electrode is placed on the mirror coating layer. Thus, the cover electrode forms a transparent carrier structure in some embodiments.

[0027] In some embodiments, the space between the optoelectronic structure elements or the region within the convex portion or the cavity is filled with a transparent insulating layer, and thus this insulating layer surrounds the structure elements. In particular, the transparent insulating layer is closed at the height of the contact opposite to the structure element, so that the cover electrode is placed on the insulating material.

[0028] In some embodiments, the substrate surface and optionally the mirror surfaces arranged on the circuit structure surround not only one but also a plurality of structure elements. These may be configured as redundant chips so that other chips can take over the function each time one chip fails. The circumferentially arranged mirror surfaces generate more uniform radiation. Similarly, a plurality of structure elements for generating light of different wavelengths may be arranged inside the circumferentially arranged mirror surfaces. The mirror circumferential surface can separate different pixels of the video display device from each other and reduce light leakage between the pixels. Such separation presented here can also be realized in a pixelated array and is used, for example, in automotive lighting fixtures.

[0029] The mirror coating is connected in series with the cover electrode and the control contact of the substrate, and includes a highly reflective material composed of, in particular, Al, Ag, AgPdCu, Nd, Nb, La, Au, Cu, Pd, Pt, Mg, Mo, Cr, Ni, Os, Sn, Zn, and alloys or combinations thereof. These also effectively expand the current. The cover electrode may have a material composed of a transparent conductive oxide layer, in particular ITO or IGZO. Other examples of cover electrode materials include, for example, metal oxides, zinc oxide, tin oxide, cadmium oxide, indium-doped tin oxide (ITO), aluminum-doped (AZO), Zn2SnO4, CdSnO3, ZnSnO3, In4Sn3O 12 and the like, or a mixture of different transparent conductive oxides can be mentioned.

[0030] The transparent insulating layer may include SiO or other insulating transparent materials described herein.

[0031] According to a further configuration, the direct electrical contact between the cover electrode and the mirror coating may be constructed by overlapping the surface of the cover electrode and the mirror coating surface, particularly at the surface of the convex portion or the end of the concave portion or cavity. In this way, a highly reliable low-impedance contact can be provided. In particular, when a plurality of such cavities or convex portions are arranged in series, the cover electrode may be placed on a plurality of mirror coating layers. Thereby, current can be introduced into the cover electrode over a wide range and at a plurality of positions.

[0032] In some embodiments, the mirror coating layer extends partially along the surface of the substrate, particularly around one or more optoelectronic structural elements. Thereby, reflection is enhanced over a wide range even on the substrate surface.

[0033] To ensure contact, in some embodiments, the direct electrical contact between the cover electrode and the mirror coating is provided by through-hole vias or vias in the mirror coating material through a planarization layer and / or an insulating layer. Additional process steps for achieving a metallic contact between the conductive oxide of the cover electrode and the contact region on the backplane / substrate are omitted. For example, a simple bridge can be constructed from an ITO cover contact to a CrAl contact region for ACF bonding. This enables further cost reduction. This through-hole via may be implemented as an opening. However, in other configurations, a structure such as a trench may be provided in the transparent insulating layer, and a conductive reflective layer for contact is applied to its inner wall. This way, on one hand, good electrical contact is obtained, on the other hand, a reflective structure is formed, and in addition to good light reflection being obtained in some regions, light leakage is also reduced.

[0034] The insulating layer may be chamfered at the edge of the pixel, and the mirror coating layer may be exposed there. The cover electrode extends along this inclined surface and contacts the mirror coating layer. In this way, a more compact structural pattern can be further provided. The flange or inner wall of the opening has an angle corresponding to the desired radiation pattern. These may correspond to those disclosed in this specification. In this way, further material damage at the transition edge can be avoided.

[0035] In other embodiments, the manufacturing of pixels or modules including a plurality of such arrangement structures arranged in rows and columns is involved. Each pixel may be embedded in a cavity or surrounded by protrusions. Therefore, the cover electrode can be used as a common connection part for a plurality of such arrangement structures. Furthermore, a lead-out structure can be provided on the cover electrode. Furthermore, such a cover electrode can also form a carrier structure, and light is extracted through this structure.

[0036] As an alternative structure, it is necessary to mention a photonic structure that is particularly suitable for further collimating light. A converter can also be provided on the cover electrode. In this way, for example, a optoelectronic structure element that generates blue light can be used, and this light can be converted by a conversion layer. In this case, in order to avoid light leakage to another pixel, a further reflective structure can be assembled on the cover electrode. Furthermore, a photonic structure for collimating the converted light is also conceivable.

[0037] In terms of the improvement of light extraction so far, particular attention has been paid to the directivity of the emitted light. However, many applications require a Lambertian emission pattern. That is, it is ideal for the light emitting surface to have a uniform irradiance within its area, and as a result, the distribution of the emission intensity is circular in the vertical direction. For the viewer, this area appears equally bright regardless of the viewing angle. In addition, such a uniform distribution can be easily reshaped again by an optical shaping element on the downstream side.

[0038] Therefore, an arrangement structure has been proposed that has a flat carrier substrate and at least one optoelectronic structure element and is configured for backside extraction. In this case, the optoelectronic structure element forms an element such as a light emitting diode for generating light. The flat carrier substrate is understood to be, for example, a semiconductor material such as a silicon wafer, LTPS or IGZO, an insulating material, or a suitable flat carrier structure capable of receiving a large number of optoelectronic structure elements juxtaposed on the surface.

[0039] The function of such a carrier substrate is, in particular, to receive functional elements such as ICs, electronic devices, power supplies for optoelectronic structure elements, electrical contacts, leads and terminals, but in particular also to accommodate light emitting diodes or optoelectronic structure elements that emit light. Here, the carrier substrate may be rigid or flexible. Typical dimensions of the carrier substrate can be, for example, a thickness of 0.5 to 1.1 mm. In addition, polyimide substrates in the range of 15 μm thickness are also known.

[0040] On the mounting surface of the carrier substrate, at least one optoelectronic structural element is arranged. In other words, the carrier substrate has two opposing main surfaces, here referred to as the mounting surface and the display surface or light-emitting surface. The mounting surface means the designated surface of the carrier substrate that receives at least one optoelectronic structural element or to which the optoelectronic structural element is attached. In some embodiments, the carrier substrate may optionally have further optical or electrical and mechanical components or layers.

[0041] The display surface represents the surface of the carrier substrate that faces the viewer or from which the light generated by the structural element exits. Furthermore, the carrier substrate plane is described as extending on the same plane parallel to the two main surfaces of the carrier substrate. At least one optoelectronic structural element is configured such that light is emitted in a direction away from the carrier substrate across the carrier substrate plane. However, this property does not exclude the direct or indirect emission of a light component in the direction of the mounting surface of the carrier substrate.

[0042] The arrangement structure further includes a flat reflector element. This is based on the idea that reflection enables a more uniform spatial distribution of light on the surface of the arrangement structure. For this reason, the reflector element is spatially arranged on the mounting surface with respect to at least one optoelectronic structural element, and its shape and properties are configured such that the light emitted from at least one optoelectronic structural element is reflected in the direction of the carrier substrate.

[0043] In other words, the reflector element is arranged in the region where the light emitted by the structural element is emitted around at least one optoelectronic structural element. According to one embodiment, the reflector element may be a prefabricated microelement applied separately. Alternatively, the reflector element may be realized by the side wall of the cavity and the reflective layer. The above-described aspects of the cavity and the mirror coating layer form a configuration mode of such a reflector element. Typical dimensions of such a reflector element can be in the range of 200 μm to 700 μm in diameter, particularly in the range of 300 μm to 600 μm, depending on the configuration variations. According to one aspect, the reflector element is configured as a reflective coating or layer of at least one optoelectronic structural element. In this regard, according to one embodiment, at least one optoelectronic structural element may have a transparent or partially transparent coating such as IGZO on its surface, and a reflective layer is further applied on the coating.

[0044] This arrangement structure is particularly suitable for generating pixels of a display or for lighting applications in the automotive field.

[0045] The reflective layer may be composed of, for example, a metal or may have a metal mixed state. Here, in order to achieve a high yield, it is required that as large a proportion as possible of the light emitted by at least one optoelectronic structural element be reflected. The carrier substrate is configured to be at least partially transparent, and the light reflected by the reflector element hits the surface of the mounting surface of the carrier substrate and propagates through the carrier substrate. This light can be at least partially emitted from the display surface on the opposite side of the carrier substrate and thus can be perceived as a pixel by the viewer.

[0046] In other words, the emitted light is extracted to the back or rear on the display surface on the opposite side of the carrier substrate. Due to the reflection effect, refraction effect and possibly attenuation effect, more uniform illumination and a more homogeneous distribution of luminance can be achieved. According to one embodiment, the reflector element is arranged and configured such that a Lambertian emission pattern is achieved.

[0047] In one aspect, the reflector element has an additional diffuser layer on the side facing at least one optoelectronic structural element. This is particularly aimed at scattering the light reflected from at least one optoelectronic structural element. Alternatively or additionally, the reflector material has diffuser particles. Diffusion means achieving further scattering or distribution of the light in the surrounding spatial region. This has a beneficial effect on further scattering or distribution of the light, and in particular on the display surface of the carrier substrate, the intensity of the light can be made more uniform or evenly distributed.

[0048] The diffuser layer may be understood as an additional layer on the reflector element and may be uniform overall, but may also be interrupted or applied only partially. In one aspect, the diffuser layer and / or the diffuser particles have Al2O3 and / or TiO2. These materials can assist in diffusing the emitted light due to their structural properties. The diffuser layer may be applied only to the surface of the reflector, but the diffuser particles may be mixed, for example, as part of the material of the entire reflector, and thus the manufacturing may be easier.

[0049] According to one aspect, the reflector element surrounds at least one optoelectronic structure element or light-emitting diode in a circular, polygonal or parabolic shape. This is in view of the fact that at least one optoelectronic structure element often has a spatially broad radiation pattern. That is, it means that light starts from a small area and is emitted at a wide angle. Therefore, it is preferable that as large a proportion as possible of the emitted light is detected by the reflector element and redirected or reflected in the direction of the display surface of the carrier substrate. In this context, for example, it may be proposed that at least one optoelectronic structure element includes a first light-emitting diode and a second light-emitting diode provided for redundancy. The latter can take over the function of the first light-emitting diode if manufacturing problems occur. In this way, the reflector element surrounding both optoelectronic structure elements provides a uniform radiation light beam regardless of which optoelectronic structure element is operating during operation. In another aspect, the reflector element surrounds at least three individual optoelectronic structure elements that emit different colors during operation. Therefore, the reflector element may be provided corresponding to each pixel of a device such as a display, a display device, a pixelated array, etc.

[0050] According to one embodiment, depending on the radiation pattern of at least one optoelectronic structure element, shapes of the reflector element such as an arc shape, a circular shape, a dome shape, a cap shape, etc. are conceivable. Thereby, according to one embodiment as well, the reflector element may be integrally or composed of multiple pieces, or may be provided with cutouts or interruptions. In another example, the reflector element has different reflection characteristics depending on the wavelength of light. This is achieved, for example, by the structure of the reflector element or its structural properties.

[0051] According to one embodiment, the reflector element is formed as a plane disposed at least partially parallel to the carrier substrate plane on at least one optoelectronic structural element. According to one aspect, the reflector element forms an electrical contact of at least one optoelectronic structural element. The point to be considered here is that since the reflector element is, for example, made of metal, simultaneous use as a connection contact for the optoelectronic structural element can be assumed. For this purpose, according to one embodiment, an electrical contact with the optoelectronic structural element, which is one of the terminals, is contemplated.

[0052] According to one aspect, the reflector element is configured and formed such that at least 90% of the light emitted by at least one optoelectronic structural element is incident on the mounting surface of the carrier substrate at an angle of 45° to 90° with respect to the carrier substrate plane. According to one embodiment, this ratio is at least 95%, and in another example, at least 80%. Behind this idea is the requirement for the highest possible yield. That is, it means that as large a proportion as possible of the light emitted from at least one optoelectronic structural element needs to come out onto the display surface of the carrier substrate.

[0053] One of the effects that can occur in a flat transparent substrate or a partially transparent substrate is total reflection. That is, light incident at an acute angle on the surface of the mounting surface means that it refracts when entering the medium of the carrier substrate with a higher density. As a result, the light is reflected multiple times within the carrier substrate between the mounting surface and the display side and does not come out of the carrier substrate any more because the angle with respect to the interface is too acute. These ratios are usually regarded as losses. To avoid these losses, it can be desirable for the light to hit the surface of the mounting surface of the carrier substrate at as wide an angle as possible, ideally vertically. Therefore, the reflector element is configured to bring about these angular relationships and in particular to reduce crosstalk between pixel elements. In one aspect, the carrier substrate has polyimide or glass. Polyimide is a material that can be used particularly for flexible displays. Glass can be the base material for a mechanically very stable rigid display.

[0054] In one aspect, a passivation layer is additionally provided to attenuate or remove reflections at the mesa edges of at least one optoelectronic structure element. The mesa edge is understood to mean a generally steep-walled or contoured boundary of at least one optoelectronic structure element. This is arranged such that its surface crosses the carrier substrate plane. To avoid crosstalk, it is desirable that light does not enter towards each adjacent pixel element. Therefore, it is useful for the light component emitted in this direction to be excluded or at least attenuated by the corresponding attenuation layer or passivation layer. The advantage here can be an improvement in contrast and a reduction in light leakage.

[0055] In one aspect, a light-absorbing coating is provided outside the reflector element on the mounting surface and / or display surface of the carrier substrate. To improve contrast and enhance the impression of darkness, it can in principle be considered desirable for the inactive regions between the structure elements, especially where different pixels do not transmit or attenuate light. Therefore, the light-absorbing coating is arranged outside the reflector element. According to one aspect, the display surface of the carrier substrate has a rough surface portion or uneven portion and / or a roughened structure. This structure is such that it provides a scattering or diffusing effect for the wavelengths of the respective associated light spectrum. This can result in an advantage, for example, that a higher proportion of the light transmitted through the carrier substrate is extracted at the display surface. This rough structure creates more favorable structural angular conditions that enable more effective extraction.

[0056] According to one aspect, a color filter element is disposed on the display surface of a carrier substrate so as to face a reflector element. This color filter element can pass the primary color spectrum of at least one optoelectronic structure element while attenuating other color spectra. By removing the light components of adjacent pixel elements of different colors, there is an advantage that color reproducibility and contrast can be improved.

[0057] Furthermore, a method for manufacturing an optical pixel element is proposed. Here, first, at least one optoelectronic structure element is attached to the mounting surface of a flat carrier substrate. Then, for example, a reflector element is created as a reflective layer of at least one optoelectronic structure element. Alternatively, the reflector element can be formed by sidewalls surrounding the periphery of the structure element and connected to a transparent cover electrode. In this case, the transparent cover electrode also forms a flat carrier substrate. According to one embodiment, before at least one optoelectronic structure element is attached to the carrier substrate, a process for patterning and / or roughening is performed on the display surface of the carrier substrate. This advantage can be seen in that the respective surfaces can be finished at a stage before applying more sensitive electronic components and optical components to the mounting surface.

Brief Description of the Drawings

[0058] In the following sections, several aspects mentioned and summarized above will be described in more detail using various configurations and examples.

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Figure 17

Figure 18

Figure 19

Figure 20

Figure 21

Figure 22

Figure 23

Figure 24

Figure 25

Figure 26

Figure 27

Figure 28

Figure 29

Figure 30

Figure 31

Figure 32

Figure 33

Figure 34

[0059] DETAILED DESCRIPTION In certain applications, directed light or radiation is important. In these applications, in addition to preventing crosstalk between adjacent elements, the light should be made directional, i.e., directed in a specific direction. This aspect is important in the automotive field, as the resulting light cone may be controlled by an upstream optical system. Scattered light may dazzle the oncoming vehicle side, but is reduced by the directed radiation.

[0060] On the other hand, in video display applications such as displays and video walls, it is necessary to avoid crosstalk of light between adjacent pixels. Light may sometimes be emitted laterally from the optoelectronic structure element, resulting in a reduction in the contrast of the display or video wall due to crosstalk. Similarly, light emitted or radiated laterally due to a sharp change in refractive index may sometimes not exit the structure. Furthermore, in many applications, it is required that the radiation pattern of the display be Lambertian so that the display appears to have the same brightness when viewed from any direction. Therefore, it has been proposed to improve the radiation pattern by providing a reflective layer or mirror around the active layer or optoelectronic structure element. In other words, the radiation pattern can be improved by providing a circumferential mirror around the optoelectronic structure element.

[0061] FIG. 84 shows a first configuration example of the proposed arrangement structure in a Y-Z cross-sectional view. This can be manufactured, for example, by the method described in the present application. In the Y-Z cross-sectional view, two optoelectronic structure elements 3a and 3b in electrical contact are fabricated on a substrate 1, and a reflector structure 4b is formed in a central region between the two processed optoelectronic structure elements 3a and 3b on the substrate 1. The flank angle of the reflector structure 4b is adjusted according to the required light extraction. For example, the flank portion may strongly depend on the distance between the optoelectronic structure element and the reflector structure 4b. The two optoelectronic structure elements 3b in electrical contact, together with the central coated reflector structure 4b, respectively form an optoelectronic arrangement structure OB. In contrast to the structure element 3a, the structure element 3b can emit light of other wavelengths. The reference numeral 4a' indicates an enclosure portion. In this configuration, it is obvious that additional structure elements, for example, three structure elements can be arranged to form sub-pixels of a pixel of the display.

[0062] In this configuration example, the components are epitaxially grown on the substrate 1, but it is also possible to separately fabricate them and then place them on the substrate 1. As part of the manufacturing process, the flank portion of the reflector structure 4b is coated with a second metal mirror layer 6b together with the first metal mirror layer 6a of the optoelectronic structure element, and the structure shown in the figure is obtained.

[0063] The reflector structure 4b is fabricated from the planarization layer 4. Similarly, each optoelectronic structural element includes a first metal mirror layer 6a that is connected as a respective metal bridge from the second contact region 2b to the contact layer 5 of the second contact of the structural element. The second metal mirror layer 6b covers only the flange portion of the reflector structure 4b. Further, in order to avoid a short circuit with the conductor track on the substrate 1, in the second metal mirror layer 6b, a region near the substrate 1 may be left empty. The substrate 1 may further include an electrical structure for driving and controlling the optoelectronic structural element as described in the present application. When the substrate is made of Si or other materials generally incompatible with optoelectronic structural elements or includes them, an alignment layer is also provided. That is, the optoelectronic structural element means one fabricated directly on the carrier 1 or transferred to the carrier. For example, various transfer processes using a stamp process are suitable for these.

[0064] Figure 3 shows, as a plan view in the X-Y plane, a first configuration example of the proposed optoelectronic arrangement structure OB. This plan view can represent the left optoelectronic structural element provided with the circumferential reflector structure described in FIG. 84. This optoelectronic structural element is a sub-pixel and, together with another one, forms one pixel of a display or a video wall. The latter is another pixel arranged in a plurality of rows and columns.

[0065] In this case, each pixel includes an arrangement structure and an optoelectronic structural element of the same structure, and they are individually driven and controlled by appropriately electrically connecting them. According to FIGS. 2 and 3, the optoelectronic device OB has a reflector structure 4b coated with the second metal mirror layer 6b, and this surrounds the optoelectronic structural element. For this reason, the optoelectronic structural element is arranged in the center. For example, other geometric shapes such as rectangular, circular, triangular or polygonal are also possible.

[0066] Here, the flange portion of the reflector structure 4b facing the structural element 3a is covered by the second metal mirror layer 6b. In a plan view, an enclosure portion 4a' is shown along the X-Y plane around the structural element 3a, and this enclosure portion 4a' was formed from the material of the planarization layer 4, similar to the reflector structure 4b. Starting from the contact layer 5, the first metal mirror layer 6a extends, in particular in the form of a strip, up to the second contact region 2b formed on the substrate 1, and this region 2b may be covered by a coating 7 for sealing or encapsulation. Exemplarily, an electrical conductor track 9 is shown, to which the second contact region 2b may be electrically connected. The metal mirror layers 6a and 6b may have the same material or the same layer stack.

[0067] Figure 4 shows a second configuration example of the proposed array in a cross-sectional view along the Y-Z plane. In contrast to Figure 3, here the reflector structure 4b is covered by the second metal mirror layer 6b along its entire original free surface. That is, not only the side surfaces but also the main surface not facing the substrate 1 are covered by the continuous second metal mirror layer 6b. The optoelectronic structural element in Figure 4 is configured in the same way as in Figure 3.

[0068] Figure 5 shows again the essential aspect of the optoelectronic structural element in a cross-sectional view along the Y-Z plane. On one side of the substrate 1 extending along the X-Y plane, a first contact 2a is connected to the semiconductor layer 3a of the optoelectronic structural element. An active zone also exists in the layer 3a. A second contact is formed by a transparent layer 5 conductively connected to the first metal mirror layer 6a. Along the X-Y plane, an electrically insulating enclosure portion 4a' is formed around the body 3a in mechanical contact therewith, along which the contact layer 5 and the first metal mirror layer 6a extend, in particular in a strip shape.

[0069] The substrate 1 may itself be a semiconductor or may include an electrical structure for drive control. Alternatively, it may be fabricated as a passive matrix backplane or an active matrix backplane, and may have, for example, glass, polyimide, or a PCB (printed circuit board; Leiterplatten). The first contact region 2a for contact in the vicinity of the substrate may have, for example, Mo, Cr, Al, ITO, Au, Ag, Cu, and alloys thereof. Similarly, the second contact region 2b for the second contact of the optoelectronic structure element 3a that does not face the substrate 1 may also have, for example, Mo, Cr, Al, ITO, Au, Ag, Cu, and alloys thereof.

[0070] The optoelectronic structure elements shown here are realized with the same material system or different material systems and emit light of different colors during operation. For example, red, green, and blue (RGB), red, green, blue, and white (RGBW) can be arranged on the substrate 1. By using conversion materials, different lights can be generated even with the same light-emitting diode. The reference numeral 4a’ indicates the remaining portion of the planarization layer 4 for providing an enclosure portion 4a’ where the contact layer 5 for the top contact can be provided. The enclosure portion 4a’ can optionally passivate the mesa edge of the semiconductor layer of the body 3a using, for example, a spin-on dielectric or a photoresist (Fotolack).

[0071] FIG. 6 shows a cross-sectional view along the Y-Z plane of a third configuration example of the proposed arrangement structure. In contrast to the first configuration example described in FIG. 2 and the second configuration example described in FIG. 4, here the reflector structure 4b is not formed. On the other hand, a coating 7 is formed for encapsulation / capsulation and / or light extraction of the contacted optoelectronic structure elements 3a, 3b. Here, in order to improve the radiation pattern, the layer 7 is patterned (not shown) and has a photonic crystal structure from above. The layer 7 is electrically insulated from other structures. The coating 7 may have scattering particles or conversion materials. The coating 7 is usually applied after the manufacture of the optoelectronic structure elements and then planarized.

[0072] FIG. 7 shows a cross-sectional view along the Y-Z plane of a fourth configuration example of the proposed arrangement structure. This depiction is similar to FIG. 8. In a supplementary form, a black potting portion 8 is formed between the optoelectronic structure elements 3a, 3b under the coating 7 provided for encapsulation / capsulation and / or light extraction of the contacted light emitters 3a, 3b. Here, the coated reflector structure 4b is not shown. These reflector structures 4b may be formed in other regions of an array not shown here.

[0073] FIG. 8 shows a plan view of a configuration example of a part of a display or lighting fixture provided with a plurality of such arrangement structures, each of which forms four pixels together. In this configuration example, particular attention is paid to the shape and arrangement of the reflector structure 4b. According to FIG. 8, each sub-pixel having an optoelectronic structure element is individually bordered by a reflector structure 4b having a second metal mirror coating 6b. In this example, the distance between the reflector structure 4b and each optoelectronic structure element is twice the chip edge length. However, other distances are also possible, and in particular the sub-pixels may be surrounded by the reflector structure at a distance of only a few μm.

[0074] Each pixel includes three sub-pixels 3a, 3b, and 3c that emit red, blue, and green light. The pixels are configured in the same shape and arranged in rows and columns. In this way, the pixels form part of a display or a module of such a display. In order to avoid visible artifacts during light emission that may be generated by the periodic sub-pixel arrangement structure, the sub-pixels 3a, 3b, and 3c may be arranged differently or in a permutation, different from the depiction shown here. Furthermore, the shape of the reflector structure 4b is not limited to a square outline.

[0075] FIG. 9 shows a sixth configuration example of the proposed array in a plan view. In this case, the reflector structure 4b is configured to surround the entire pixel, for example, together with the optoelectronic structure elements 3a, 3b, 3c. Since the distances are different in this way, the flank angles of the coated reflector structure 4b are different from those of the configuration in FIG. 8. If necessary, in some cases, the flank angle of the centrally arranged reflector structure can also be made different from that of the surrounding frame. However, in any configuration, it should be noted that such structures are combined in a fairly large number and formed as pixels.

[0076] FIGS. 10 to 12 show further configuration examples of optoelectronic structure elements that can be configured as sub-pixels, combined, and surrounded by a reflector structure.

[0077] In FIG. 10, a metal mirror layer 6c is additionally formed on the side flank of the enclosure part 4a of the optoelectronic structure element. The side flank forms a frustum of a pyramid and tapers towards the top. Furthermore, the metal mirror layer can also serve as a contact for the contact 5. FIG. 11 shows the second configuration example already described. FIG. 12 shows the third configuration example. In this example, the flank part of the reflector structure 4a is also chamfered in the same way, but the perimeter increases as the distance from the carrier 1 increases. The extraction of light from the main body is adjusted by the shape of the side surface and its steepness.

[0078] FIG. 13 shows a further structural example based on the third configuration according to FIG. 12 in a plan view. In this example, the second metal mirror layer 6c provided on the reflector structure 4a is surrounded and bordered by a black layer 8, particularly a black potting. This may extend, for example, particularly in the vicinity of the substrate 1 at the base of the reflector structure 4a. Further, a coating 7 for sealing and light extraction is deposited on the surface. The flange portion of the reflector structure 4a is covered with the second metal mirror layer 6c. Starting from the contact layer 5, the first metal mirror layer 6a extends, particularly in the form of a strip, up to a second contact region 2b formed on the substrate 1, and this region 2b may be covered with an optically transparent coating 7 for sealing or encapsulation. Exemplarily, an electrical conductor track 9 is shown, and the second contact region 2b may be electrically connected thereto. The metal mirror layers 6a and 6c may have the same material or the same layer stack.

[0079] FIG. 1 shows a configuration example of a proposed method for manufacturing a optoelectronic arrangement structure OB and optoelectronic structural elements. The steps shown here are applicable to a large number of individual optoelectronic structural elements and can be manufactured in large quantities.

[0080] In the first step S1, a first contact region 2a and a second contact region 2b are provided on one side of the substrate or the carrier. The carrier itself may have an internal structure such as a circuit. The contact region can be manufactured, in particular, by patterning a photoresist layer and then removing the unexposed regions so that a part of the substrate is exposed. On top of that, the contact regions 2a, 2b are deposited, and a metallic layer is deposited. Similarly, a body 3a is provided on one of the contact regions. The body 3a includes two oppositely doped semiconductor layers with an active layer interposed therebetween for generating light. In some embodiments, this body can be manufactured separately and then transferred to this region using a transfer process. In another embodiment, a layer is provided on the surface of the substrate 1 and patterned to form the body.

[0081] In the second step S2, a planarization layer 4 is provided to form a reflector structure 4b that completely surrounds the body 3. If necessary, the layer 4 is planarized to be flush with the surface of the body 3a. Subsequently, the layer 4 is patterned so that an enclosing portion 4’ is formed around the body 3. This enclosing portion substantially continues up to the second contact region 2b. Further, an outer edge portion 4b is constructed at a more distant position. The side flanks of the outer edge portion are chamfered. By utilizing the flank steepness, the direction of light extraction or reflection can be controlled. In step S4, a contact surface 5 is provided on the surface of the body 3a and the adjacent region thereto. This includes a material that is transparent yet conductive.

[0082] Finally, in the fifth step S5, a metal mirror layer 6a for electrical connection is provided on the contact layer 5. The metal mirror layer extends beyond the enclosing portion 4a’ up to and contacts the second contact region 2b. Further, a second metal mirror layer 6b is simultaneously provided on the side flanks of the reflector structure 4b. By patterning and processing, no metal remains on the surface of the circumferential web 4. In other configurations, this may be patterned in order to obtain an electrical connection between the metal mirror layers on both side flanks.

[0083] The embodiments of the reflective mirror presented above are also applicable to other designs of optoelectronic structure elements. For example, they are also applicable to vertical optoelectronic structure elements having the following circumferential structure. In this regard, FIG. 15 shows the configuration of a pixel cell having a common cover electrode and a circumferential structure, which on the one hand enables a high switching time by appropriate current induction and on the other hand radiates the light generated by the mirror coating in the main radiation direction. The arrangement structure according to FIG. 15 is provided with three vertical optoelectronic structure elements. The first structure element 1 provides red light, the second structure element provides green light, and the third structure element provides blue light. In this way, each optoelectronic structure element forms a sub-pixel of the pixel cell. The individual structure elements are shown in a row for simplicity, but other arrangement structures are also conceivable, such as in the shape of a triangle. Furthermore, the structure elements are of the same size. In one configuration, the structure elements have an edge length in the range of 200 μm to 750 μm, and their height can be, for example, preferably 10 μm to 100 μm. Each structure element is manufactured separately and then transferred to the substrate 3 by various transfer processes. This is for convenience as the size may vary depending on the configuration. However, it is desirable for the structure elements to have the same height so that no additional measures are required for further process steps. The optoelectronic structure element is configured in a vertical structure, that is, it has two contacts on different upper and lower surfaces as shown in the figure.

[0084] The optoelectronic structure elements are arranged on a common substrate 3. Further, the first contact of the optoelectronic structure element is electrically connected to a contact (not shown) on or in the substrate. The substrate itself may be a semiconductor substrate or a backplane, etc. Wired leads for the contacts of the optoelectronic structure elements are arranged in the substrate. In addition to the leads, a power supply and / or drive control electronic circuit may be formed on the substrate. There is sufficient space for this due to the size of the structure elements. In some applications, for example, in lighting applications, it is necessary to further provide measures to dissipate the generated heat. In applications with low power consumption such as displays, part of the structure and supply lines may be designed with TFT technology.

[0085] The pixel cell with the three optoelectronic structure elements is embedded in a cavity or surrounded by an outer edge. Such an outer edge can also be seen, for example, in FIGS. 2 to 6. On the left and right sides of FIG. 15, convex portions 29 are formed on the substrate 3. The convex portions 29 providing such cavity portions or concave portions may have a non-conductive material such as polyimide, etc. These surround the optoelectronic structure elements on all sides and thus form an optoelectronic arrangement structure such as the outer edge of the pixel.

[0086] The side walls are slightly chamfered and extend at an angle with respect to the normal of the surface. In addition to the linear profile of the side surfaces shown here, the side walls may show a parabolic profile.

[0087] Furthermore, an additional electrical insulating layer 25 is provided between the fabricated convex portion 29 and the substrate 3 to further enhance mechanical strength. A conductive mirror coating layer 7 is applied on the insulating layer or the convex portion 29. This extends not only along the side surface of the convex portion 29 but also over the regions on the substrate surface and between the optoelectronic structural elements. However, here the intervals of the mirror coating layers are left open to avoid short - circuits or inadvertent contacts with the die. Furthermore, a mirror coating is also provided on the upper surface of the convex portions in region 13. The mirror coating 7 is configured as a metal mirror and may particularly have Al, Ag, and AgPdCu, etc. Further materials may be metals or alloys from Al, Ag, Nd, Nb, La, Au, Cu, Pd, Pt, Mg, Mo, Cr, Ni, Os, Sn, Zn, or their alloys or combinations.

[0088] Then, the space between the convex portions or within the cavity and the space 15 of the optoelectronic structural elements is filled with a transparent non - conductive material 21 up to the height of the second contact 5 of the optoelectronic structural elements. The material 21 forms an insulating layer. The insulating layer can be applied by techniques such as spin - on glass. Then, if necessary, the insulating material can be removed up to the height of the contact 5 and the mirror coating layer to expose them and form a flat surface. Finally, a transparent conductive layer is fabricated on the second contact 5 of the structural element and the insulating layer 21 to provide the cover electrode 11. This transparent layer may have, for example, ITO and / or IGZO, etc. Further examples of cover electrode materials may be, for example, transparent conductive oxides such as metal oxides, zinc oxide, tin oxide, cadmium oxide, indium - doped tin oxide (ITO), aluminum - doped (AZO), Zn2SnO4, CdSnO3, ZnSnO3, In4Sn3O 12 and so on, or mixtures of different transparent conductive oxides.

[0089] The cover electrode 11 extends to cover the entire insulating layer 21 and overlaps with the mirror coating layer in region 13. By directly contacting the lower metal mirror 7 over a wide range, good current coupling occurs, so the distance that the current has to travel through the transparent conductive layer 11 is short. Therefore, even if the sheet resistance of the transparent conductive layer 11 is generally large, it has little impact. Since the surface to which the cover electrode 11 is applied is a flat surface, the material can be easily sputtered or applied by "spin-on glass (SOG)", which is a top contact process. This makes it possible to planar coat the ITO cover electrode 11, and for example, edge peeling is avoided in so-called thermal shock tests. However, in this manufacturing, it is convenient for both the mirror coating 7 and the contact 5 to be exposed to the material 11 and in direct contact.

[0090] FIG. 17 shows a configuration form according to FIG. 15 in a plan view. At the center of this arrangement structure, three optoelectronic structure elements are assembled in series. These are contacted by the cover electrode 11, and the cover electrode 11 is electrically contacted in the overlap region 13 with the mirror coating 7 or the metal mirror layer. The outer edge formed by the convex portion or cavity is substantially square. As a result, the distance from the convex portions of the two outer optoelectronic structure elements becomes small. In one configuration, it may be convenient to form the outer edge rather as a rectangle. This is shown in FIG. 17 by the dashed region 13a where the convex portion is arranged and the cover electrode is in contact with the mirror coating. This makes the distance between the optoelectronic structure element and the outer edge more uniform.

[0091] Figure 18 shows an arrangement structure in which a plurality of pixels P1, P2, P3... Pn are arranged along a line. The pixels P are separated from each other by convex portions so that light leakage is at least reduced. When viewed in a cross-sectional view, three optoelectronic structure elements 1 are formed for each pixel, and these optoelectronic structure elements 1 are formed to emit light of different wavelengths during operation. These are fixed between the substrate 3 and the cover electrode 11 and are in electrical contact. The direct electrical contact between the cover electrode 11 and the mirror coating 7 is formed according to the configuration described in FIG. 15.

[0092] The mirror coating 7 is electrically connected to each cover electrode 11 of the convex portions separating the pixels. Outside the pixel cells and pixel rows, the mirror coating is wired to the control contact 9 at the left end of the substrate 3. The control contact 9 forms a contact area where further contact is possible. In other examples, the contact 9 is wired to a substrate on which further circuits and drive control elements are arranged. Since the sheet resistance is lowered by the metallic mirror coating, the voltage drop across the entire lead wire is generally reduced. By appropriately routing the current induction, the parasitic capacitance can be reduced, and the switching time for driving and controlling the optoelectronic structure elements can be effectively shortened. With the pixel arrangement structure shown in FIG. 18, light scattering between pixels and thus so-called light leakage can be further minimized.

[0093] Figure 19 shows a further configuration of the proposed device. Here, the same reference numerals as in FIGS. 15 to 18 denote the same features. In this configuration, no convex portions or cavities are provided on the substrate, that is, the mirror coating and the lead wires extend substantially planar along the surface of the substrate 3. Three optoelectronic structural elements 1 are arranged on the substrate 3 and are electrically connected to contacts (not shown). The mirror coating 7 surrounding the optoelectronic structural elements is electrically separated from the substrate 3 by a layer 25 that is transparent yet electrically insulating. The structural elements 1 (R, G, and B) are surrounded by an insulating layer 21. This is transparent and reaches up to the height of the contacts 5 of the optoelectronic structural elements in all directions on the substrate. The upper contacts of the optoelectronic structural elements 1 are electrically contacted by a cover electrode 11 configured as a transparent ITO cover contact and are placed on the insulating layer. Further, a plurality of conductive through-hole vias are constructed on the mirror coating layer 7, and the mirror coating layer 7 and the cover electrode 11 are in electrical contact. Further, to keep the sheet resistance low, the through-hole vias are filled with metal.

[0094] In some embodiments, the through-hole vias are simply openings in the insulating layer. However, the insulating layer may be provided with trenches or the like that reach up to the mirror coating layer 7. By forming at least a portion of these around the pixel and subsequently filling with a reflective material, in addition to good current coupling, guiding of light can also be achieved. In this configuration, the height of the optoelectronic structural elements is not very important since they do not need to be adjusted to the height of the cavity or convex portion if they are of the same height.

[0095] Figure 20 also shows a plan view of the structure shown in FIG. 19. The pixel is configured as a square such that the distance from the center of the die to the edge of the pixel is approximately the same. The reference numeral 5 denotes the electrical contact 5 to the transparent cover electrode 11 of the optoelectronic structural element 1. Here too, the area around the optoelectronic structural element can be surrounded by a mirror coating 7 (not shown).

[0096] Figure 21 shows a further configuration example of the proposed device in a cross-sectional view. According to this example, the cover electrode 11 is formed as an ITO cover contact, and this ITO cover contact itself is planarized and applied on the contacts 5 of each optoelectronic structure element R, G, and B. The insulating layer 21 surrounds the periphery of each structure element. However, in the edge region of the pixel, the insulating layer is removed of material, and the side edge extends obliquely. Thereby, an opening 19 reaching the mirror coating layer 7 is formed, and it will be exposed in a larger area, that is, not just a dot-like area. The larger this exposed area is, the larger the subsequent contact area with the cover electrode 11 will be.

[0097] In other words, the flat insulating layer is removed in the area between two pixels and in the area above the mirror coating layer 7. This can be done, for example, by an etching process using RIE. The fabricated opening 19 has a flank portion 23 with a flat opening angle. Since the cover electrode 11 is applied to the insulating layer after opening, it will spread over the entire flat surface and side surface of the insulating layer. Alternatively, a metal layer may be applied to the side surface that contacts the cover electrode 11 at the upper end of the insulating layer.

[0098] In the case of a thicker insulating layer 21, it is desirable that the opening 19 and its side flank are configured such that the upper angle is relatively flat, that is, it becomes a conical shape that is relatively inversely planar. The flat bending angle avoids the "peeling off" of the ITO layer 11 at the edge portion of the opening 19. The same can be said for the angle between the side flank and the mirror coating layer 7.

[0099] The fabricated pixel elements have such contacts and overlapping portions 13 at several locations, particularly in the circumferential direction, and the sub-pixels or pixels are similarly enclosed. Further, additional subsequent layers, such as a scattering layer or a clear coat layer, can be provided in the opening with different refractive indices. In this exemplary configuration, for example, the lateral waveguide of the light emitted from the side edge of the chip can be utilized for light extraction and does not propagate to adjacent pixels, leading to an improvement in contrast.

[0100] FIG. 22 shows a plan view of the configuration described in FIG. 21. The three sub-pixels respectively provided by the micro light-emitting diode die 1 have electrical contacts 5 on the side not facing the substrate 3. These can be electrically coupled to the outside of the pixel by the transparent cover electrode 11.

[0101] FIG. 23 shows a further exemplary configuration of the device. The three optoelectronic structural elements 1 are arranged in series. Each of the structural elements is configured as a frustum of a pyramid in this configuration. As the height increases, its base surface slightly decreases. Thus, the side flanks of the optoelectronic structural elements are slightly chamfered.

[0102] The surface of the side flanks of each optoelectronic structural element 1 is covered with a thin transparent insulating layer 26. However, since this does not reach the upper second contact 5, it is exposed. The inorganic insulating layer 26 may be fabricated, for example, by chemical vapor deposition. Alternatively, the layer 26 is SiN x , SiO xIt may be formed of ALD (Atomic Layer Deposition) layers such as Al2O3, TiO2, HfO2, TaO2, and ZrO2. This inorganic layer may be a multilayer, specifically, it may consist of ALD-CVD-ALD, CVD-ALD, or ALD-CVD. The ALD layer may essentially consist of a multilayer stack (so-called nanolaminate). In this case, such an ALD nanolaminate consists of, for example, a multilayer stack of two different ALD layers and ALD materials. For example, the individual layers typically have a thickness of only 3 nm to 10 nm and are specifically formed according to, for example, A-B-A-B-A, etc.

[0103] In the vicinity of the substrate 3, a mirror coating 7, which is also formed in the vicinity of the structural element 1, is provided on the electrical insulation layer 25. Openings 20 are formed in the insulating layer 26 on the left and right sides of the pixel at a sufficient distance from the die. Therefore, the mirror coating layer 7 is exposed there. Finally, a cover electrode made of a conductive transparent material is provided on the upper surface and the side flanks. Since this extends also over the openings of the insulating layer 26, it will be connected to the metallic layer 7 over a wide range. In this way, a direct electrical contact between the cover electrode 11 and the mirror coating 7 can be created.

[0104] FIG. 24 shows a plan view of the arrangement structure described in FIG. 110. According to FIG. 24, the three sub-pixels or optoelectronic structural elements 1 are arranged such that their electrical contacts 5 do not face the substrate 3 and can be electrically contacted by the transparent cover electrode 11.

[0105] FIG. 16 presents a configuration with additional structures. Since this arrangement structure is similar to the configuration of FIG. 15, a repeated description is omitted. However, different from its configuration, here three optoelectronic structure elements B of the same type are provided on the substrate and are electrically contacted. The optoelectronic structure element B is configured to emit light with a blue wavelength during operation. A patterned insulating layer 30 is provided on the cover electrode 11. This improves the extraction of light from the optoelectronic structure elements. In this configuration, since optoelectronic structure elements of the same type are used, in order to obtain RGB pixels, it is necessary to convert the light into other colors.

[0106] For this purpose, a conversion material for converting light into an appropriate wavelength is provided on the layer 30. Specifically, this is the first conversion layer 31 located above the left blue optoelectronic structure element. A green conversion layer 32 is provided above the optoelectronic structure element arranged in the middle. Finally, a further transparent layer 33 is arranged above the right optoelectronic structure element. This layer itself is not necessary, but the presence of the transparent layer constructs a flat surface. The conversion material contains inorganic dyes or quantum dots. To reduce light leakage, the individual conversion layers, or the conversion layer 32, is separated from the transparent layer by a thin reflective layer 34. Light from other structure elements may also enter the conversion layer more than the structure element arranged directly below, but this can be reduced by increasing the low-profile design or the conductor track structure between the structure elements. Furthermore, the extraction layer 30 may be patterned to extract more light incident on the layer 30 at a steep angle, that is, light incident substantially from below. Here, the pixels are arranged very close together. By increasing the distance slightly or using an arrangement structure other than in series, the converter and the reflective layers 31 - 34 can be arranged so that they are evenly distributed on the pixels. In this way, the outermost reflective layer 34 will also be located on the convex part.

[0107] On the conversion structure, there is one or more further patterned layers 35, which also extend partially into the conversion structure (not shown here). The converted light can be well coupled to the structure 35. The patterned layer 35 serves to collimate and shape the light so that the converted or unconverted light exits substantially steeply, i.e., preferably perpendicular to the substrate surface. The patterned layer 35 may have, for example, a photonic structure that provides a virtual bandgap for the light to propagate parallel to the surface. Thereby, the light is collimated.

[0108] By arranging some of the pixels shown here in rows and columns, an individually controllable display or display array can be formed. With these arrangement structures, for example, a pixelated lighting array for automobiles can also be created.

[0109] Figure 25 shows a configuration example of a proposed method for manufacturing an optoelectronic arrangement structure. In the first step S1, a substrate having a large number of contacts on its surface is prepared. The substrate may include further lead wires, drive control elements, or switching elements as described above. In one aspect, protrusions are made on the substrate so as to surround the optoelectronic structure elements to be attached later, and by doing so, the arrangement structure can be optically separated from adjacent elements.

[0110] In step S2, one or more optoelectronic structure elements are attached on the substrate and electrically connected to the contacts on or in the substrate by their first contacts. The optoelectronic structure elements are configured in a vertical structure, i.e., the contacts of the optoelectronic structure elements face each other. The optoelectronic structure elements can be arranged in series, but other arrangements are also possible.

[0111] In step S3, a mirror coating layer that is electrically connected to the electrical control contacts on the substrate surface and at least partially covers the surface is deposited on the substrate surface. Here, the mirror coating layer can be deposited at least partially, particularly on the convex portions or the side walls of the cavities facing the optoelectronic structure elements. Finally, in step S3, a transparent cover electrode that is in electrical contact with the mirror coating layer is applied to a further contact.

[0112] To avoid peeling of the cover electrode, it is further specified that in step S2 or S3, after applying the mirror coating layer or after attaching the optoelectronic structure element, these are surrounded by an insulating layer. Since the height of this insulating layer corresponds to the height of the optoelectronic structure element, a flat surface is constructed. The production of the insulating layer is carried out by the measures disclosed herein for producing a transparent non-conductive layer such as spin-on glass. By removing the material of the insulating layer up to the upper contact between the optoelectronic structure element and the mirror coating layer, a flat surface is created. This step may include mechanical or chemical techniques. Then, the cover electrode is applied on the transparent insulating layer.

[0113] This contact can be made at the overlapping contact between the cover electrode surface and the mirror coating in the region of the convex portion or at the end of the cavity that does not face at least one optoelectronic structure element. Alternatively, a series of through-hole vias can be provided in the insulating layer and filled with metal to create a connection between the cover electrode and the mirror coating layer. The through-hole vias may be trenches that expose the mirror coating layer.

[0114] In a further step, one or more patterned layers having a photonic crystal or quasicrystal structure and configured to suppress or reduce light irradiated parallel to the surface of the substrate can be applied on the cover electrode. Alternatively, the cover electrode itself may be patterned to improve light extraction, collimate light, direct the radiation in a direction away from the substrate surface, etc. Finally, it is possible to apply a conversion material on the optoelectronic structure element.

[0115] The following aspects relate to a different perspective that is different from directly improving the directivity of the emitted light. The following examples are aimed at fabricating a Lambert emitter. However, it will be apparent to those skilled in the art that other shaped reflector elements affect beam shaping. Therefore, in a special configuration, an arrangement structure having a back extraction and optionally having directivity is fabricated.

[0116] FIG. 25 shows a configuration example in which the optoelectronic arrangement structure 10 according to the present invention includes a reflector element 18. First, a carrier substrate 12 is also provided here, and a large number of optoelectronic structure elements 16 are often juxtaposed on the mounting surface 20 of the carrier substrate 12. Usually, a drive control electronic circuit 24 used to control the individual optoelectronic structure elements 16 is provided on the carrier substrate 12. For this purpose, a conductive connection part (not shown) may be provided between the drive control electronic circuit 24 and the individual optoelectronic structure elements 16. In other cases, as will be further shown below, the carrier substrate can be made transparent or further provided with a structure for new light shaping.

[0117] Here, the reflector element 18 is configured in a dome shape and surrounds the optoelectronic structure element 16 at least on the side where the optoelectronic structure element 16 emits light 14. For example, when the structure element 16 emits light 14 in a direction away from the carrier substrate 12, this light hits the surface of the reflector element 18 facing the optoelectronic structure element 16, is reflected there, and is sent back toward the mounting surface 20 of the carrier substrate 12. The light propagates in the direction of the display surface 22 of the carrier substrate 12 through the cross-section of the carrier substrate 12 while refracting at the interface of the mounting surface 20 in some cases, and is taken out there while repeating refraction or diffraction in some cases.

[0118] Advantageously, the reflector element 18 desirably has a shape and characteristics tailored to the purpose that the light 14 enters the mounting surface 20 of the carrier substrate 12 at an incident angle 26 that is as perpendicular as possible to the carrier substrate plane 28. This is especially for minimizing losses due to total internal reflection within the carrier substrate 12 and inconvenient angles when taken out from the display surface 22 of the carrier substrate 12. This incident angle 26 is desirably as small as possible also for minimizing crosstalk or leakage between adjacent pixel elements 10.

[0119] FIG. 26 shows a further example of an arrangement structure 10 according to the present invention in the form of a pixel element having a reflector element 18 as a layer on or around a optoelectronic structure element 16. This configuration variant can be advantageous in that the reflector element 18 can be machined directly onto the surface of the structure element 16, for example as a metal layer. Various materials can be considered for the reflector element 18, for example, in addition to metal materials, metal alloys or metal oxides, other suitable compounds that can be obtained using available manufacturing methods can also be mentioned. A similar configuration is provided by directly forming the optoelectronic structure element from the same material as the carrier substrate. Furthermore, the reflector element has a specific shape and configuration. However, the various aspects of the foregoing figures can be combined, in particular, with the configurations shown in FIGS. 25-26 and the configurations disclosed in the present application. For example, the reflector element 18 can be replaced with a configuration of a layer applied in a reflective circumferential direction. Accordingly, the carrier substrate is applied to the cover electrode.

[0120] Furthermore, a passivation layer 32 is provided on the mesa edge 30 between the structure element 16 and the layer of the reflector element 18. This passivation layer 32 has light absorption or at least light blocking properties, so that the light 14 emitted by the optoelectronic structure element in the direction of the carrier substrate plane 28 or in the direction of the mesa edge 30 is attenuated or absorbed. Thereby, the light 14 is prevented from entering the adjacent elements 10 and causing crosstalk. Furthermore, the passivation layer 32 may be configured to perform beam shaping of the emitted light 14.

[0121] FIG. 27 shows a pixel element according to the present invention having a light absorption coating 34 on the display surface 20 and the mounting surface 22 of the carrier substrate 12. In this configuration example, a spherical reflector element 18 is provided so as to surround the optoelectronic structure element 16 disposed on the mounting surface 20 of the carrier substrate 12. According to this aspect, the carrier substrate 12 is configured to be transparent or at least partially transparent so that the light 14 can propagate within the carrier substrate 12.

[0122] According to this configuration example, a light absorption layer 34 is provided to improve the dark impression and contrast of the display. This light absorption layer 34 is provided here outside the reflector element 18 on the carrier substrate 12 and is applied to the mounting surface 20 and / or the display surface 22. On the one hand, this can prevent the extraction of light 14 outside the desired active region of the pixel element. On the other hand, as an advantageous effect, the light 14 propagating within the carrier substrate 12 is not extracted outside the desired region of the display surface 22 and is absorbed or attenuated. For the viewer, these light absorption layers 34 can be clearly identified as inactive or black or dark, and the contrast characteristics of the display can be improved by the improved optical boundary compared to the active light-emitting region.

[0123] FIG. 28 schematically shows a further configuration modification example of the arrangement structure 10 according to the present invention. In its basic structure, the arrangement structure 10 corresponds to the examples already shown in FIGS. 25 to 27. Here, the optoelectronic structure element 16 surrounded by the reflector element 18 is provided on the carrier substrate 12. Due to the reflection of the light 14 by the reflector element 18, the light 14 propagates through the carrier substrate 12 and reaches the display surface 22 of the carrier substrate 12.

[0124] In this case, it is desirable that as large a proportion as possible of the light 14 passing through the carrier substrate 12 is extracted from the carrier substrate 12 through the display surface 22. In this case, the roughened surface 36 can improve the extraction of the light 14. More generally, the surface of the display surface 22 has a patterned portion having additional microstructures angled with respect to each other, and this microstructure can provide additional extraction by having an angle different from the orientation parallel to the carrier substrate plane 28.

[0125] Figure 29 shows an arrangement structure 10 according to the present invention in which a color filter element 38 is provided on the display surface of a carrier substrate 12 and a light absorption coating 34 is applied. This configuration is suitable for generating, for example, white or other colored light, for example, in automotive lighting fixtures.

[0126] The basic structure of the arrangement structure 10 is substantially the same as that of the previous figures, and here too, a light absorption layer 34 is provided on both the mounting surface 20 and the display surface 22 of the carrier substrate 12 outside the region of the reflector element 18. Further, a color filter element 38 is provided here and is arranged opposite the reflector element 18 on the display surface 22 of the carrier substrate 12.

[0127] For example, a corresponding red color filter element 38 may be provided for a red optoelectronic structure element. The same also applies to using a green structure element for a green color filter element 38 and, for example, a blue LED for a blue color filter element 38, together with their respective associated emitter chips 16. A lower reflectivity and an improved black impression can be regarded as advantages here. Here too, the light absorption layer 34 has an absorption effect on unwanted light components 14 propagating within the carrier substrate 12.

[0128] In an alternative configuration, referring again to Figure 29, the element 38 may be a color conversion element that converts light of a first wavelength to a second wavelength. The light emitted by the optoelectronic structure element 16 and reflected by the reflector element 18 is incident on the conversion element and is converted there. In this way, each primary color and also white light can be created by structures using different conversion dyes.

[0129] Figure 31 shows a further configuration example of an array 10 in which two adjacent arrangement structures 10 are arranged on a carrier substrate. Light absorption layers 34 are provided on respective different surfaces of the carrier substrate between the two pixel elements 10. This may be provided particularly for minimizing crosstalk. Depending on the arrangement and structure of the structural element 16, a space may be formed between the structural element 16 and the reflector element 18 surrounding it, which can serve as an aperture or an aperture edge. That is, it can be meant that light 14 exits from this aperture at a small angle with respect to the carrier substrate plane 28 and can pass obliquely through the carrier substrate 12 and go toward the adjacent pixel elements 10.

[0130] To prevent such missed calls or crosstalk, light absorption layers 34 are provided between the two arrangement structures 10 or between two adjacent reflector elements 18. These may be arranged not only on the mounting surface 20 of the carrier substrate 12 but also on the display surface 22 of the carrier substrate 12. These light absorption layers 34 can attenuate or remove unwanted light components 14 and thus improve the contrast of the display.

[0131] In FIG. 32, an aspect of a drive control electronic circuit 24 of an arrangement structure in the form of a pixel element 10 according to the present invention is referred to. This is configured as a part of the carrier substrate. For example, a transistor structure is provided as a part of the carrier substrate. In one embodiment, a substrate 12 is provided as the carrier substrate. When the drive control electronic circuit 24 is configured based on IGZO, according to one embodiment, it is also conceivable that the drive control electronic circuit 24 can be arranged within the inner region of the reflector element 18 (not shown here). This possibility is particularly based on at least partial light transmissibility of the IGZO material. According to a further example, LTPS is used as the base of the drive control electronic circuit 24 and also as the material of the carrier substrate 12. LTPS is an abbreviation for Low Temperature Poly Silicon. Although it has relatively high light absorption characteristics, it can have electrical characteristics superior to those of IGZO.

[0132] As materials for the substrate 12, various materials such as amorphous silicon, and further IGZO or LTPS are considered. IGZO is an abbreviation for indium gallium zinc oxide, has a property of being partially transparent to light, and can be manufactured relatively inexpensively.

[0133] LTPS can be used for both p-type transistors and n-transistors, while IGZO is only suitable for p-type transistors. The arrangement structure of the drive control electronic circuit 24 based on LTPS will, as a result, be provided outside the reflector element 18 here. As a further option, the use of so-called ICs can be considered. These are often used together with silicon-based substrates and generally have light absorption characteristics.

[0134] However, the reflector structure may be a part of a substrate (not shown here), in which case the substrate will include drive control elements. In this connection, in that case, the structural element 16 is embedded in the cavity, and its side walls will form the reflector element 18.

[0135] According to one embodiment, the drive control element will be arranged above or on the side 20 as seen from the substrate 12, outside the region of the reflector element 18 above the reflector 18, or at least outside. The contact of the emitter chip 16 can be realized, for example, not only through a metal contact pad on the carrier substrate 12 but also through transparent ITO (indium tin oxide).

[0136] FIG. 33 shows an arrangement structure 10 according to the present invention in which a diffuser layer 40 is partially coated on a reflector element 18. The features of the arrangement structure 10 shown in this configuration example can be seen in the special configuration of the reflector element 18. In this regard, a diffuser layer 40 is provided on the lateral inner surface (here, specifically, region 18B) of the reflector element 18. The purpose of this diffuser layer 40 is to increase the deflection of the emitted light 14 and further enhance the deflection of the light 14 in the direction of the carrier substrate 12. In this case, it may be advantageous to provide a thinner diffuser layer 40 or no diffuser layer 40 at all in the region 18A of the reflector directly above the vertical direction of the emitter chip.

[0137] In particular, in this region 18A, this diffuser layer 40 may be configured to be flat or planar in order to reflect the light emitted laterally with respect to the carrier substrate plane 28 back as directly as possible and focus it toward the mounting surface 20 of the carrier substrate 12 in a substantially vertical direction. At this time, compared with the conventional LED technology, since the optoelectronic structure element is close to the Lambert emission pattern in terms of its characteristics and structure, a relatively thin diffuser layer 40 may be sufficient in some cases. Materials that can be used for this purpose are, for example, Al2O3 or TiO2.

[0138] Figure 34 shows a further configuration in the form of a pixel cell in cross-sectional and plan views. The pixel cell includes three individual optoelectronic structural elements 16r, 16g, and 16b. These are configured to emit the respective primary colors of red, green, and blue during operation. In this configuration example, the three optoelectronic structural elements are arranged at the corners of a right triangle. However, other arrangements are possible, such as arranging them in a row, for example. Each structural element is formed as a vertical LED, that is, a common contact is arranged on the side of the LED that does not face the carrier substrate. The optoelectronic structural elements can be individually driven and controlled and can be manufactured, for example, in several configurations as shown in FIGS. 49 to 54. Similarly, for example, another configuration as an individual display module or lighting fixture module with or without redundancy can be considered. In the right-hand figure, for this purpose, a common transparent cover contact 17 is provided, which completely or at least partially covers the optoelectronic structural elements and thereby makes electrical contact. The side walls of the optoelectronic structural elements are insulated and not connected to the cover electrode 17. Further, a reflector element 18 is provided to surround each of the three optoelectronic structural elements and form the entire pixel.

[0139] The light radiated in the direction of the reflector element in this way is reflected by the carrier substrate and hits the photonic structure 19 partially introduced into the carrier substrate. The photonic structure 19 is configured to newly change the direction of the radiated light and emit it as a collimated light beam. In addition to the structure 19 shown here, a lens can also be applied to this region of the carrier structure.

[0140] It is also possible to omit the photonic structure according to the application. In automotive applications, a Lambertian emission pattern may be desirable, in which case this structure is omitted. In the field of augmented reality, strong directivity may also be required, which is achieved by adding a photonic structure. In addition to the photonic structure, a conversion material may also be provided together with or instead of the structure. In the automotive field, applications of directed light using white or other colored light are possible.

[0141] Finally, FIG. 35 shows a method 100 for manufacturing the placement structure 10. In this method, first, one or more optoelectronic structural elements are attached 110 to the mounting surface of a flat carrier substrate. Prior to this attachment, corresponding transfer is performed. The configuration regarding this is disclosed in the present application.

[0142] Thereafter, in step 120, a reflector element is fabricated, for example, as a reflective layer of the optoelectronic structural element. According to one embodiment, before step 110, the display surface 22 of the carrier substrate 12 is processed to create a rough surface 36 or a rough fine patterning portion on the surface of the display surface 22.

[0143] Hereinafter, as exemplary subject matters, various devices and placement structures, as well as methods of manufacturing, processing, and operating are described again. The following subject matters present various aspects and configurations of the proposed principles and concepts, which can be combined in various ways. Such combinations are not limited to those shown below.

[0144] 1. A method for manufacturing at least one optoelectronic placement structure, comprising the following steps: - creating a first contact region and a second contact region on the surface of substrate 1; - preparing a vertical optoelectronic structural element and connecting a first contact of the structural element to the first contact region; - fabricating a reflector structure that surrounds and separates the optoelectronic structure elements on the substrate; - fabricating a first metal mirror layer that electrically connects a contact layer attached to a second contact of the optoelectronic structure element and the second contact region; - fabricating a second metal mirror layer facing the optoelectronic structure element on the reflector structure that surrounds the periphery; A method comprising:

[0145] 2. Further, applying a planarization layer to form the reflector structure; optionally, removing the planarization layer on the second contact region to make the second contact region accessible to the first metal mirror layer; The method according to claim 1, comprising:

[0146] 3. Patterning the planarization layer to form the reflector structure that surrounds the optoelectronic structure element in a mechanically contacting manner; further applying the first metal mirror layer for electrical connection, especially in an electrically conductive state with the second metal mirror layer, to the reflector structure; The method according to claim 2, comprising:

[0147] 4. The method according to claim 3, wherein the enclosure surrounds the light emitter, especially at an interval more than twice the edge length of the optoelectronic structure element.

[0148] 5. Applying the second metal mirror layer to a main surface of the reflector structure that does not face the substrate The method according to claim 3, comprising:

[0149] 6. The method according to any one of claims 1 to 5, wherein the second metal mirror layer is applied to a flange portion of the reflector structure.

[0150] 7. The method according to claim 6, wherein the light extraction is adjusted by the inclination angle of the flange portion of the reflector structure.

[0151] 8. The step of fabricating the flange portion of the reflector structure such that the perimeter of the reflector structure increases as the distance from the substrate increases, or The step of fabricating the flange portion of the reflector structure such that the perimeter of the reflector structure decreases as the distance from the substrate increases The method according to claim 7, comprising.

[0152] 9. The method according to any one of claims 1 to 8, further comprising the step of providing a black layer, particularly a potting layer, between the flange portions of the reflector structure, particularly up to the height of the flange portions, on the substrate.

[0153] 10. Further, - Applying a coating for sealing, encapsulating and / or optically extracting up to the height above the substrate or the black layer, particularly above the first metal mirror layer, and optionally patterning. The method according to any one of claims 1 to 9, comprising.

[0154] 11. The method according to any one of claims 1 to 10, wherein the layer is patterned in the middle by photolithography.

[0155] 12. An optoelectronic arrangement structure, - A substrate having a first contact region and a second contact region, and - At least one vertical optoelectronic structure element, wherein a first contact of the vertical optoelectronic structure element is connected to the first contact region on one side of the substrate, and a first contact of the vertical optoelectronic structure element that does not face the substrate is connected to the second contact region by a transparent contact layer and a first metal mirror layer. An optoelectronic structure element, - A reflector structure surrounding the vertical optoelectronic structure element, wherein a second metal mirror layer is attached to the reflector structure, and the reflector structure An optoelectronic arrangement structure including

[0156] 13. The optoelectronic arrangement structure according to claim 12, wherein the reflector structure surrounds the vertical optoelectronic structure element in a mechanically contacting manner, and in particular, the first metal mirror layer is electrically conductive with the second metal mirror layer.

[0157] 14. The optoelectronic arrangement structure according to claim 12 or 13, having an enclosing portion that surrounds the vertical optoelectronic structure element in a mechanically contacting manner, and the reflector structure surrounds the enclosing portion, in particular, at an interval of 1 to 10 times, especially more than 3 times, the edge length of the vertical optoelectronic structure element, and the first metal mirror layer and the contact layer are further provided on the enclosing portion.

[0158] 15. The optoelectronic arrangement structure according to any one of claims 12 to 14, wherein three optoelectronic structure elements respectively form each sub-pixel of one pixel.

[0159] 16. The optoelectronic arrangement structure according to any one of claims 12 to 15, wherein the transparent contact layer is a transparent cover electrode extending above the reflector structure beyond the vertical optoelectronic structure element.

[0160] 17. The optoelectronic arrangement structure according to any one of claims 12 to 16, further including a conversion material at least partially disposed on the vertical optoelectronic structure element.

[0161] 18. Further including an optical shaping structure having a first region and a second region with different refractive indices, in particular a microlens or a photonic structure, - Applied to the transparent contact layer, or - Disposed between the transparent contact layer and the optoelectronic structure element, or - The optoelectronic arrangement structure according to any one of claims 12 to 17, wherein one of the first region and the second region at least partially extends into the semiconductor material of the vertical optoelectronic structure element, or is formed by the vertical optoelectronic structure element, or is formed by the conversion material.

[0162] 19. The optoelectronic arrangement structure according to any one of claims 12 to 18, wherein a cavity is formed by the surrounding reflector structure, the vertical optoelectronic structure element is disposed in the cavity, and the remaining space in the cavity is filled with a conversion material, particularly quantum dots.

[0163] 20. An optoelectronic arrangement structure, wherein the region between the surrounding reflector structure and the vertical optoelectronic structure element is at least partially covered by a reflective layer.

[0164] 21. An optoelectronic arrangement structure, wherein the optoelectronic structure element has a height lower than that of the surrounding structure.

[0165] 22. A device comprising a plurality of optoelectronic arrangement structures according to any one of claims 12 to 21, or a plurality of optoelectronic arrangement structures manufactured according to the method according to any one of claims 1 to 11 and arranged in rows and columns to form pixels, wherein the plurality of pixels are each surrounded by the reflector structure, and the side walls of the reflector structure are chamfered and provided with a metal mirror layer.

[0166] 23. A pixel comprising an optoelectronic arrangement structure according to any one of claims 12 to 21, disposed on a carrier substrate and comprising three vertically configured optoelectronic structure elements surrounded by a reflector structure.

[0167] 24. Use of the optoelectronic arrangement structure according to any one of claims 12 to 20 in a video wall or a lighting fixture, particularly a lighting fixture for an automobile.

[0168] 25. A optoelectronic arrangement structure comprising a substrate and at least one optoelectronic structure element fixed to one side of the substrate, - The side facing the substrate has a first electrical contact, - The side not facing the substrate has a second electrical contact electrically connected to the electrical control contact on the surface of the substrate by a mirror coating, - The mirror coating at least partially covers the surface of the substrate facing the at least one structure element, optoelectronic arrangement structure.

[0169] 26. Further, It includes a transparent cover electrode that extends to cover the second electrical contact and is connected to the electrical contact by the mirror coating, and the mirror coating is at least partially disposed under the cover electrode and is spaced apart from the cover electrode, the optoelectronic arrangement structure according to claim 25.

[0170] 27. The optoelectronic arrangement structure according to claim 25 or 26, wherein the control contact is not disposed under the cover electrode and the mirror coating does not extend under the cover electrode in at least one region.

[0171] 28. The optoelectronic arrangement structure according to any one of claims 25 to 27, wherein the mirror coating has a metal mirror including at least one of the following metals in particular: Al, Ag, AgPdCu, Nd, Nb, La, Au, Cu, Pd, Pt, Mg, Mo, Cr, Ni, Os, Sn, Zn, and combinations of the foregoing.

[0172] 29. The cover electrode is a conductive oxide layer, in particular IGZO, metal oxide, zinc oxide, tin oxide, cadmium oxide, indium-doped tin oxide (ITO), aluminum-doped (AZO), Zn2SnO4, CdSnO3, ZnSnO3, In4Sn3O 12The optoelectronic arrangement structure according to any one of themes 25 to 28, having a material composed of a mixture of different transparent conductive oxides.

[0173] 30. The optoelectronic arrangement structure according to any one of themes 25 to 29, wherein the substrate has an outer edge portion that at least partially surrounds the periphery of the at least one optoelectronic structure element, the mirror coating is disposed on the upper side of the outer edge portion, and the mirror coating is electrically connected to the cover electrode surface at that location.

[0174] 31. The optoelectronic arrangement structure according to any one of themes 25 to 30, wherein the substrate has a cavity in which the at least one optoelectronic structure element is disposed, and the cavity has a depth substantially corresponding to the height of the at least one optoelectronic structure element.

[0175] 32. The optoelectronic arrangement structure according to any one of themes 25 to 31, wherein an insulating planar insulating layer having a height substantially equal to or less than the height of the at least one optoelectronic structure element is provided around the at least one optoelectronic structure element.

[0176] 33. The optoelectronic arrangement structure according to any one of themes 25 to 32, wherein the insulating planar insulating layer extends at least partially on the substrate between the cover electrode layer and the mirror coating layer, particularly between the optoelectronic structure element and the outer edge portion surrounding it.

[0177] 34. The optoelectronic arrangement structure according to any one of themes 239 to 252, wherein the mirror coating extends at least partially over the side surface of the outer edge portion facing the optoelectronic structure element, and the side surface extends at an angle chamfered with respect to the surface of the substrate in particular.

[0178] 35. The optoelectronic arrangement structure according to any one of claims 25 to 34, wherein the direct electrical contact between the cover electrode and the mirror coating is provided by through-hole vias or vias of the mirror coating material through the insulating layer.

[0179] 36. The optoelectronic arrangement structure according to any one of claims 25 to 35, wherein the insulating layer is chamfered at least in one region and spaced apart from the optoelectronic structure element, and the cover electrode extends in the direction of the mirror coating at that location.

[0180] 37. The optoelectronic arrangement structure according to claim 36, wherein the flange portion of the chamfered region has a flat lead angle.

[0181] 38. The optoelectronic arrangement structure according to any one of claims 25 to 37, wherein the first contact of the optoelectronic structure element is directly connected to the contact on the surface of the substrate.

[0182] 39. A pixel comprising the optoelectronic arrangement structure according to any one of claims 25 to 38, wherein optoelectronic structure elements that respectively provide red light, green light, and blue light are fixed on a substrate, and the second electrical contact of the optoelectronic arrangement structure is joined to a conductive mirror coating layer through a transparent conductive cover electrode.

[0183] 40. The pixel according to claim 39, wherein the optoelectronic structure elements are surrounded by a common outer edge portion or are arranged within a common cavity.

[0184] 41. The region on the substrate between the optoelectronic structure elements is at least partially covered by a reflective layer, particularly the mirror coating layer. The pixel according to claim 39 or 40.

[0185] 42. The pixel according to any one of claims 39 to 41, wherein the optoelectronic structure elements are embedded in a transparent and non-conductive material.

[0186] 43. The pixel according to any one of Topics 39 to 42, wherein the substrate has lead wires configured to individually and independently drive and control each of the optoelectronic structure elements.

[0187] 44. The pixel according to any one of Topics 39 to 43, wherein the substrate has a TFT structure and electrical lead wires for individually supplying current to each optoelectronic structure element.

[0188] 45. The pixel according to any one of Topics 39 to 44, further including a light shaping patterning layer on or in the transparent cover electrode, the light shaping patterning layer having a lenticular element, a photonic crystal or a quasi-crystalline structure, and being configured to suppress or reduce light radiated parallel to the surface of the substrate.

[0189] 46. The pixel according to any one of Topics 39 to 45, wherein the transparent cover electrode is patterned so as to collimate light and radiate it in a direction away from the substrate surface, or to extract light.

[0190] 47. The pixel according to any one of Topics 39 to 46, wherein a conversion material for converting light is disposed on at least one of the optoelectronic structure elements and / or around the optoelectronic structure elements, and the conversion material may be electrically insulated from the transparent cover electrode by an insulating layer in particular.

[0191] 48. A display or display module having a plurality of pixels according to any one of Topics 39 to 47, arranged so as to be individually drive-controllable in rows and columns, wherein, in particular, pixels arranged in a column have a common cover layer and a common electrical control contact.

[0192] 49. The display or display module according to Topic 48, wherein the pixels are separated from each other by protrusions disposed on the substrate.

[0193] 50. The display or display module according to claim 48 or 49, wherein the substrate has a plurality of cavities separated from each other, and one of the plurality of pixels is disposed in one of the cavities.

[0194] 51. The display or display module according to any one of claims 48 to 50, wherein a conversion material for converting light, particularly quantum dots, is introduced into at least some of the cavities.

[0195] 52. The display or display module according to claim 50, wherein the side wall of the convex portion or the side wall between the cavities has a reflective layer, particularly a mirror coating layer.

[0196] 53. The display or display module according to any one of claims 48 to 52, wherein the substrate has a conductive structure configured to individually address and drive-control pixels, particularly any one of the foregoing or following subject matters.

[0197] 54. A lighting fixture including a plurality of optoelectronic arrangement structures or pixels according to any one of the foregoing subject matters, particularly a lighting fixture in an automobile.

[0198] 55. A method for manufacturing an optoelectronic arrangement structure, comprising the following steps: - preparing a substrate having a plurality of contacts on a surface; - attaching at least one, particularly a vertical, optoelectronic structural element to one of the contacts, the optoelectronic structural element having a further contact on a side not facing the substrate surface; - preparing a mirror coating layer on the substrate surface that is electrically connected to the electrical control contacts on the substrate surface and at least partially covers the surface; Forming a transparent cover electrode on the further contact that is in electrical contact with the mirror coating layer A method comprising.

[0199] 56. The method according to theme 55, wherein the substrate has a convex portion that at least partially surrounds at least one optoelectronic structural element.

[0200] 57. The method according to theme 55 or 56, wherein the mirror coating layer is applied at least partially to the convex portion or the side wall of the cavity facing at least one of the optoelectronic structural elements.

[0201] 58. Further, - Applying a transparent insulating layer to the substrate surface so as to surround at least one optoelectronic structural element, and applying the cover electrode on the transparent insulating layer The method according to any one of themes 55 to 57, comprising.

[0202] 59. Further, at least one of the following steps: - Forming a contact where the cover electrode surface and the mirror coating surface overlap in the region of the convex portion or at the end of the cavity not facing the at least one optoelectronic structural element; or - Forming a through-hole via penetrating the transparent insulating layer and filling the through-hole via so that the cover electrode above contacts the mirror coating layer; or - Applying a conductive connection portion that contacts the transparent cover electrode and the mirror coating layer on the chamfered side of the transparent insulating layer The method according to any one of themes 55 to 58, comprising.

[0203] 60. Further, - A step of mirror coating a part of the substrate surface between the above optoelectronic structure elements, in particular a step of applying the above mirror coating layer to the substrate surface between the above optoelectronic structure elements The method according to any one of claims 55 to 59, comprising

[0204] 61. Further, A step of forming a patterning layer on the above transparent cover electrode, wherein the patterning layer has a photonic crystal or quasicrystal structure and is configured to suppress or reduce light radiated parallel to the surface of the substrate The method according to any one of claims 55 to 60, comprising

[0205] 62. Further, A step of patterning the above transparent cover electrode, in particular a step of collimating light and radiating it in a direction away from the substrate surface or extracting light The method according to any one of claims 55 to 61, comprising

[0206] 63. Further, A step of applying a conversion material for converting light onto at least one of the above optoelectronic structure elements, wherein the conversion material is electrically insulated from the above transparent cover electrode, in particular by an insulating layer The method according to any one of claims 55 to 62, comprising

[0207] 64. An optoelectronic structure element, - A p-type doped layer, - An n-type doped layer, - An active region disposed between the p-type doped layer and the n-type doped layer Comprising a layer stack consisting of The above layer stack bulges beyond the main surface, the above active region is disposed above the center of the above layer stack as viewed from the above main surface, and the above layer stack has a diameter that decreases from the above main surface A reflective layer covering the surface of the above layer stack An optoelectronic structure element including

[0208] 65. The optoelectronic structure element according to claim 64, wherein the layer stack has a hemispherical or parabolic or elliptical shape.

[0209] 66. The optoelectronic structure element according to claim 64 or 65, wherein a region of the active layer adjacent to the reflective layer has an increased bandgap.

[0210] 67. The optoelectronic structure element according to any one of claims 64 to 66, wherein a region of the active layer adjacent to the reflective layer has quantum well intermixing.

[0211] 68. The optoelectronic structure element according to any one of claims 64 to 67, wherein the reflective layer has a dielectric between the active region and a layer of the layer stack adjacent to the surface region.

[0212] 69. An optoelectronic arrangement structure, - A flat carrier substrate, - At least one optoelectronic structure element disposed on a mounting surface of the carrier substrate, in particular the optoelectronic structure element according to any one of claims 64 to 68, The optoelectronic structure element is configured such that light is emitted in a direction away from the carrier substrate across the carrier substrate plane, and an optoelectronic structure element, - A flat reflector element, The reflector element is spatially arranged and configured on the mounting surface with respect to the at least one optoelectronic structure element such that light emitted by the at least one optoelectronic structure element is reflected in the direction of the carrier substrate, and a reflector element And having The carrier substrate is at least partially transparent such that light reflected from the reflector element propagates through the carrier substrate and exits at a display surface of the carrier substrate opposite to the mounting surface. An optoelectronic arrangement structure.

[0213] 70. A photoelectronic arrangement structure according to theme 69, wherein a diffuser layer is provided on the side of the reflector element facing the at least one optoelectronic structure element to scatter the light reflected from the at least one optoelectronic structure element, and / or the reflector material has diffuser particles.

[0214] 71. A photoelectronic arrangement structure according to theme 70, wherein the diffuser layer and / or the diffuser particles contain Al2O3 and / or TiO2.

[0215] 72. A photoelectronic arrangement structure according to any one of themes 69 to 71, wherein the reflector element surrounds the at least one optoelectronic structure element in a circular, polygonal or parabolic shape.

[0216] 73. A photoelectronic arrangement structure according to any one of themes 69 to 72, wherein the reflector element forms an electrical contact of the at least one optoelectronic structure element.

[0217] 74. A photoelectronic arrangement structure according to any one of themes 69 to 73, wherein the reflector element is configured and formed such that at least 90% of the light emitted by the at least one optoelectronic structure element is incident on the mounting surface of the carrier substrate at an angle of 45° to 90° with respect to the plane of the carrier substrate.

[0218] 75. A photoelectronic arrangement structure according to any one of themes 69 to 74, wherein the at least one optoelectronic structure element includes three structure elements surrounded by a reflector element.

[0219] 76. A photoelectronic arrangement structure according to theme 63, wherein the at least three structure elements have a contact region covered with a transparent cover layer for a common electrical contact on the side facing the reflector element.

[0220] 77. The optoelectronic arrangement structure according to any one of topics 69 to 76, wherein the carrier substrate has polyamide, transparent plastic, resin, or glass.

[0221] 78. The optoelectronic arrangement structure according to any one of topics 69 to 77, wherein the reflector element is formed as a reflective layer of the at least one optoelectronic structure element.

[0222] 79. The optoelectronic arrangement structure according to any one of topics 69 to 78, wherein a passivation layer is additionally provided to attenuate or remove the reflection of light at the mesa edge of the at least one optoelectronic structure element.

[0223] 80. The optoelectronic arrangement structure according to any one of topics 69 to 79, wherein a light absorption coating is provided outside the reflector element on the mounting surface and / or display surface of the carrier substrate.

[0224] 81. The optoelectronic arrangement structure according to any one of topics 69 to 80, wherein the display surface of the carrier substrate has an uneven portion and / or a roughened structure.

[0225] 82. A color filter element is arranged on the display surface of the carrier substrate so as to face the reflector element, The color filter element passes the primary color spectrum of the at least one optoelectronic structure element and attenuates different color spectra. The optoelectronic arrangement structure according to any one of topics 69 to 81.

[0226] 83. An optical shaping structure, particularly a photonic structure, having the features described in any one of the following topics is introduced into the carrier substrate. The structure has a first region and a second region with different refractive indices. The optoelectronic arrangement structure according to any one of topics 69 to 82.

[0227] 84. On the display surface of the carrier substrate, an optical shaping structure and / or an optical conversion structure are arranged, and the structure has a first region and a second region. The optoelectronic arrangement structure according to any one of claims 69 to 83.

[0228] 85. The optoelectronic arrangement structure according to claim 83 or 84, wherein the first region contains a conversion material.

[0229] 86. The optoelectronic arrangement structure according to any one of claims 69 to 85, including a conversion material that surrounds the at least one optoelectronic structure element and fills the space between the optoelectronic structure element and the reflector material.

[0230] 87. The optoelectronic arrangement structure according to any one of claims 69 to 86, wherein the display surface of the carrier substrate contains a conversion material.

[0231] 88. A display arrangement structure, particularly a video wall, having a plurality of optoelectronic arrangement structures according to any one of the foregoing claims.

[0232] 89. An automotive lighting fixture provided with the optoelectronic arrangement structure according to any one of the foregoing claims.

[0233] 89. A method for manufacturing an optical pixel element, comprising the following steps: - Attaching at least one optoelectronic structure element to the mounting surface of a flat carrier substrate; - Fabricating a reflector element, wherein the reflector element is formed as an optical reflection layer on the at least one optoelectronic structure element such that light emitted by the at least one optoelectronic structure element is reflected in the direction of the carrier substrate. A method having.

[0234] The description using the exemplary configurations does not limit the various configurations shown to those configurations. Rather, the present disclosure shows several aspects that can be combined with each other. For example, an aspect related to a process can also be combined with an aspect focused on light extraction. This is also apparent from the various topics shown above.

[0235] Accordingly, the present invention includes any feature and any combination of features, and in particular, any combination of features in the subject matter and the claims, even if this feature or combination is not explicitly specified in the exemplary configurations.

Claims

1. An optoelectronic configuration structure, a top side having a first contact area and a second contact area; a flat and at least partially transparent carrier substrate; at least one vertical optoelectronic component arranged therebetween, said component having a first contact connected on one side of its top side to said first contact region and thus fixed to said top side, at least one vertical optoelectronic component, the component having a second electrical contact facing the flat carrier substrate, the second electrical contact being connected to the second contact area forming a control contact by a transparent contact layer and a first metallic mirror layer; a reflector structure surrounding said vertical optoelectronic component, said reflector structure being provided with a second metal mirror layer, said first metal mirror layer at least partially covering the substrate surface facing said at least one component; where the optoelectronic component is configured such that light is emitted in a direction transverse to a carrier substrate plane away from the carrier substrate, the reflector structure and the first and second metal mirror layers are spatially arranged and configured with respect to the at least one optoelectronic component in such a way that light emitted by the at least one optoelectronic component is reflected in the direction of the carrier substrate so that this light exits from a side of the carrier substrate facing the component, Optoelectron arrangement structure.

2. A display comprising an optoelectronic configuration or a plurality of optoelectronic components according to claim 1.

Images