Display device

Abstract

To provide a display device that can prevent external moisture from penetrating while placing an optical electronic device inside a display area.SOLUTION: Embodiments of the disclosure relate to a display device and, more specifically, may provide a display device capable of effectively preventing external moisture from penetrating into a display area through a camera hole by including the display area included in a light emitting element, the camera hole positioned in the display area, and a first non-display area positioned between the display area and the camera hole and including a moisture-preventing structure positioned in the first non-display area.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a display device.

Background Art

[0002] With the development of technology, in addition to the image display function, a display device can also provide a photographing function and various sensing functions. For this purpose, the display device must be provided with optoelectronic devices (referred to as light receiving devices or sensors) such as a camera and a sensing sensor.

[0003] Since the optoelectronic device must receive light from the front of the display device, it must be installed in a place where light reception is advantageous. Therefore, a camera (camera lens) and a sensing sensor may be exposed on the front surface of the display device. As a result, the bezel of the display panel becomes wider, or a notch is formed in the display area of the display panel, and a camera or a sensing sensor is installed here.

[0004] When a bezel is widely arranged on the front surface of the display panel or a notch is arranged, a problem may occur in that the area of the display area for displaying an image on the display panel decreases.

Summary of the Invention

Problems to be Solved by the Invention

[0005] In the technical field of display devices, technologies for providing optoelectronic devices such as a camera and a sensing sensor without reducing the area of the display area of the display panel have been studied. Therefore, the inventors of the present disclosure invented a display device in which the optoelectronic device is located inside the display area instead of the bezel area located on the outer periphery of the display area, while the optoelectronic device can normally receive light. However, such a display device has a problem that the portion where the optoelectronic device is located is vulnerable to penetration of external moisture. Therefore, the inventors of the present disclosure have invented a display device that can prevent external moisture from penetrating while positioning the optoelectronic device inside the display area.

[0006] Embodiments of the present disclosure can provide a display device including a camera hole located within a display area and a first non-display area located between the display area and the camera hole, and including a moisture-proof structure disposed in the first non-display area.

[0007] Embodiments of the present disclosure can provide a display device including a moisture-proof structure that can effectively prevent external moisture from penetrating.

Means for Solving the Problems

[0008] Embodiments of the present disclosure can provide a display device including a substrate, a dam, an insulating portion, a plurality of insulating films, and a moisture-proof structure. The substrate can include a display area, a camera hole, and a first non-display area. A plurality of light-emitting elements including a light-emitting layer can be located in the display area. The camera hole can be located within the display area. The first non-display area can be located between the display area and the camera hole. The dam can be located in the first non-display area. The insulating portion can be located in the first non-display area. The plurality of insulating films can be disposed on the substrate and located below the plurality of light-emitting elements. The moisture-proof structure can be disposed in the first non-display area. The moisture-proof structure can include an undercut area of one of the plurality of insulating films.

[0009] Embodiments of the present disclosure include a display area and a non-display area adjacent to the display area, a camera hole located on a plane and separated from the display area and disposed adjacent to the non-display area, a light-emitting element disposed to overlap the display area on the plane, a dam structure disposed in the non-display area, and a plurality of metal layers, and can provide a display device including a first moisture-proof structure disposed adjacent to the dam structure.

[0010] In the display device according to embodiments of the present disclosure, an auxiliary metal layer disposed below the plurality of metal layers of the first moisture-proof structure can be further included.

[0011] According to an embodiment of the present disclosure, a display device including a moisture-proof structure disposed in a first non-display area can be provided, which can prevent external moisture from penetrating and causing defects.

[0012] According to an embodiment of the present disclosure, a display device enabling low-power driving can be provided by preventing external moisture from penetrating and reducing the lifespan of light-emitting elements or causing defects in the light-emitting elements.

Brief Description of the Drawings

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Embodiments for Carrying Out the Invention

[0014] Hereinafter, some embodiments of the present disclosure will be described in detail with reference to exemplary drawings. When adding reference numerals to the components of each drawing, for the same components, as long as possible, the same numerals can be used even if they are shown on different drawings. In addition, when explaining the present disclosure, if it is determined that a specific description of a related known configuration or function obscures the gist of the present disclosure, the detailed description thereof can be omitted. When terms such as "including", "having", and "performed" are used in this specification, other parts may be added unless "only" is used. When a component is expressed in the singular, it may include the case where a plurality are included unless otherwise explicitly stated.

[0015] In addition, when explaining the components of the present disclosure, terms such as first, second, A, B, (a), B, etc. can be used. These terms are for distinguishing the components from other components, and the essence, order, procedure, number, etc. of the components are not limited by these terms.

[0016] In the description of the positional relationship of components, when it is described that two or more components are "connected", "coupled" or "joined", etc., it should be understood that the two or more components may be directly "connected", "coupled" or "joined", but it is also possible that another component may "intervene" between the two or more components and then the two or more components are "connected", "coupled" or "joined". Here, the other component may be included in one or more of the two or more components that are "connected", "coupled" or "joined" to each other.

[0017] In the description of the temporal flow relationship regarding components, operating methods, manufacturing methods, etc., for example, when the temporal front-back relationship or flow front-back relationship is described by "after ~", "subsequent to ~", "after ~", "before ~", etc., unless "immediately" or "directly" is used, it can include cases where it is not continuous.

[0018] In describing the components of the present disclosure, the shapes, sizes, numerical values (e.g., length, width, height, thickness, radius, diameter, area, etc.), ratios, angles, the number of components, etc. shown in the accompanying drawings are merely examples, and the present disclosure is not limited thereto.

[0019] Note that the numerical values including the sizes and thicknesses of the respective components shown in the drawings are shown for convenience of explanation, and the present disclosure is not limited to the sizes and thicknesses of the components shown, and the relative numerical values including the relative sizes, positions, and thicknesses of the components shown in the various drawings attached to the present disclosure are also part of the present disclosure.

[0020] On the other hand, when referring to numerical values or their corresponding information (e.g., levels, etc.) regarding components, even without separate explicit description, the numerical values or their corresponding information can be interpreted as including the error ranges that may be caused by various factors (e.g., process factors, internal or external impacts, noise, etc.).

[0021] Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0022] FIG. 1 is a plan view of a display device 100 according to an embodiment of the present disclosure.

[0023] Referring to FIG. 1, the display device 100 may include a display area DA and a non-display area NDA. The non-display area NDA may include a second non-display area NDA2 surrounding the display area DA. The display area DA is an area for displaying an image, and a plurality of light-emitting elements may be located therein. The second non-display area NDA2 may be a bezel area located on the outer contour of the display area DA of the display device 100. In the second non-display area NDA2, driving circuits such as a data driving circuit and a gate driving circuit for driving a plurality of light-emitting elements located in the display area DA may be located, and signal lines such as data lines and gate lines may be located.

[0024] The display device 100 may include a display area DA, a camera hole CH located within the display area DA, and a first non-display area NDA1 located between the display area DA and the camera hole CH. Various optoelectronic devices provided in the display device 100 may be located in the camera hole CH. For example, although the camera is located under the substrate of the display device 100, it may be located to overlap with the camera hole CH on the plane. According to an embodiment of the present disclosure, in the display device 100, since the camera hole CH is located within the display area DA, the area of the second non-display area NDA2, which is the bezel area, can be reduced, and the display area DA can be maximized.

[0025] The camera hole CH may be one hole as shown in FIG. 1, but is not limited thereto, and can be arranged in various ways. For example, one or two holes may be arranged inside the display area DA, a camera may be arranged in the first hole, and a distance sensing sensor, a face recognition sensor, or a camera may be additionally arranged in the second hole.

[0026] The first non-display area NDA1 can surround the camera hole CH. For example, the first non-display area NDA1 is located in the peripheral part of the camera hole CH and can surround all or part of the peripheral part of the camera hole CH. A signal line for transmitting a signal to a light-emitting element located in the display area DA can be located in the first non-display area NDA1. The first non-display area NDA1 can be called the bezel area of the camera hole CH, and for example, can be called a variable bezel area.

[0027] FIG. 2 is a system configuration diagram of the display device 100 according to an embodiment of the present disclosure. In the following description, when explaining the embodiment shown in FIG. 2, unless otherwise specified, it is the same as the description with reference to FIG. 1 described above.

[0028] Referring to FIG. 2, the display device 100 can include a display panel 110 and a display driving circuit as components for video display.

[0029] The display driving circuit is a circuit for driving the display panel 110 and can include a data driving circuit DDC, a gate driving circuit GDC, a display controller D-CTR, and the like.

[0030] The display panel 110 can include a display area DA where an image is displayed and a second non-display area NDA2 where an image is not displayed. The second non-display area NDA2 may be an outer peripheral area of the display area DA, and can also be called a bezel area. All or part of the second non-display area NDA2 may be an area visible from the front of the display device 100, or may be bent and not visible from the front of the display device 100.

[0031] The display panel 110 can include a camera hole CH located in the display area DA and a first non-display area NDA1 located between the display area DA and the camera hole CH.

[0032] The display panel 110 can include a substrate SUB and a plurality of sub-pixels SP disposed on the substrate SUB. Further, the display panel 110 can further include various types of signal lines to drive the plurality of sub-pixels SP.

[0033] The display device 100 according to an embodiment of the present disclosure may be a liquid crystal display device or the like, or may be a self-emitting display device in which the display panel 110 emits light by itself. When the display device 100 according to an embodiment of the present disclosure is a self-emitting display device, each of the plurality of sub-pixels SP can include a light-emitting element. For example, the display device 100 according to an embodiment of the present disclosure may be an organic light-emitting display device in which the light-emitting element is embodied as an organic light-emitting diode (OLED). As another example, the display device 100 according to an embodiment of the present disclosure may be an inorganic light-emitting display device in which the light-emitting element is embodied as an inorganic-based light-emitting diode. As yet another example, the display device 100 according to an embodiment of the present disclosure may be a quantum dot display device in which the light-emitting element is a quantum dot that is a semiconductor crystal that emits light by itself.

[0034] Depending on the type of the display device 100, the structure of each of the plurality of sub-pixels SP may be different. For example, when the display device 100 is a self-emitting display device in which the sub-pixel SP emits light by itself, each sub-pixel SP can include a light-emitting element that emits light by itself, one or more transistors, and one or more capacitors.

[0035] For example, various types of signal lines can include a plurality of data lines DL that transmit data signals (also referred to as data voltages or video signals) and a plurality of gate lines GL that transmit gate signals (also referred to as scan signals).

[0036] A plurality of data lines DL and a plurality of gate lines GL can cross each other. Each of the plurality of data lines DL can be arranged while extending in a first direction. Each of the plurality of gate lines GL can be arranged while extending in a second direction. Here, the first direction may be a column direction, and the second direction may be a row direction. Or, the first direction may be a row direction, and the second direction may be a column direction.

[0037] The data driving circuit DDC is a circuit for driving a plurality of data lines DL, and can output a data signal to the plurality of data lines DL. The gate driving circuit GDC is a circuit for driving a plurality of gate lines GL, and can output a gate signal to the plurality of gate lines GL.

[0038] The display controller D-CTR is a device for controlling the data driving circuit DDC and the gate driving circuit GDC, and can control the driving timing for the plurality of data lines DL and the driving timing for the plurality of gate lines GL.

[0039] The display controller D-CTR can supply a data driving control signal DCS to the data driving circuit DDC to control the data driving circuit DDC, and supply a gate driving control signal GCS to the gate driving circuit GDC to control the gate driving circuit GDC.

[0040] The display controller D-CTR can receive input video data from the host system H-SYS and supply video data Data to the data driving circuit DDC based on the input video data.

[0041] The data driving circuit DDC can receive video data Data in digital form from the display controller D-CTR, convert the received video data Data into an analog-form data signal, and output it to the plurality of data lines DL.

[0042] The gate drive circuit GDC is supplied with a first gate voltage corresponding to the turn-on level voltage and a second gate voltage corresponding to the turn-off level voltage together with various gate drive control signals GCS, generates a gate signal, and can supply the generated gate signal to a plurality of gate lines GL.

[0043] For example, the data drive circuit DDC can be connected to the display panel 110 by a tape automated bonding (TAB) method, connected to the bonding pads of the display panel 110 by a chip on glass (COG) or chip on panel (COP) method, or implemented by a chip on film (COF) method and connected to the display panel 110.

[0044] The gate drive circuit GDC can be connected to the display panel 110 by a tape automated bonding (TAB) method, connected to the bonding pads of the display panel 110 by a chip on glass (COG) or chip on panel (COP) method, or connected to the display panel 110 by a chip on film (COF) method. Alternatively, the gate drive circuit GDC may be formed in the second non-display area NDA2 of the display panel 110 in a gate in panel (GIP) type. The gate drive circuit GDC can be disposed on the substrate or connected to the substrate. That is, when the gate drive circuit GDC is of the GIP type, it can be disposed in the second non-display area NDA2 of the substrate. When the gate drive circuit GDC is of the chip on glass (COG) type, chip on film (COF) type, etc., it can be connected to the substrate.

[0045] On the one hand, at least one of the driving circuits, namely the data driving circuit DDC and the gate driving circuit GDC, can also be arranged in the display area DA of the display panel 110. For example, at least one of the data driving circuit DDC and the gate driving circuit GDC may be arranged so as not to overlap with the sub-pixel SP, or may be arranged so that part or all of it overlaps with the sub-pixel SP.

[0046] The data driving circuit DDC can also be connected to one side (for example, the upper side or the lower side) of the display panel 110. Depending on the driving method, panel design method, etc., the data driving circuit DDC can be connected to both sides (for example, the upper side and the lower side) of the display panel 110, or can be connected to two or more sides of the four sides of the display panel 110.

[0047] The gate driving circuit GDC can also be connected to one side (for example, the left side or the right side) of the display panel 110. Depending on the driving method, panel design method, etc., the gate driving circuit GDC can be connected to both sides (for example, the left side and the right side) of the display panel 110, or can be connected to two or more sides of the four sides of the display panel 110.

[0048] The display controller D-CTR may be embodied as a separate component from the data driving circuit DDC, or may be integrated with the data driving circuit DDC and embodied as an integrated circuit.

[0049] The display controller D-CTR can be a timing controller used in ordinary display technology, or a control device that can further perform other control functions including a timing controller, or a control device different from the timing controller, or a circuit within the control device. The display controller D-CTR may be embodied by various circuits and electronic components such as an IC (Integrated Circuit), an FPGA (Field Programmable Gate Array), an ASIC (Application Specific Integrated Circuit), or a processor (Processor).

[0050] The display controller D-CTR is mounted on a printed circuit board, a flexible printed circuit, etc., and can be electrically connected to the data driving circuit DDC and the gate driving circuit GDC via the printed circuit board, the flexible printed circuit, etc.

[0051] The display controller D-CTR can transmit and receive signals with the data driving circuit DDC according to one or more predetermined interfaces. For example, the interface can include an LVDS (Low Voltage Differential Signaling) interface, an EPI (Embedded Clock Point-Point Interface) interface, an SPI (Serial Peripheral Interface), etc.

[0052] The display device 100 according to an embodiment of the present disclosure can further provide a touch sensing function in addition to the video display function, and thus can include a touch sensor and a touch sensing circuit that senses the touch sensor to detect whether a touch has occurred by a touch object such as a finger or a pen, or to detect the touch position.

[0053] The touch sensing circuit can include a touch drive circuit TDC that drives and senses a touch sensor to generate and output touch sensing data, and a touch controller T-CTR that can sense touch occurrence or detect a touch position using the touch sensing data.

[0054] The touch sensor can include a plurality of touch electrodes. The touch sensor can further include a plurality of touch lines for electrically connecting the plurality of touch electrodes and the touch drive circuit TDC.

[0055] The touch sensor can exist in the form of a touch panel outside the display panel 110 or inside the display panel 110. When the touch sensor exists outside the display panel 110 in the form of a touch panel, the touch sensor is called an external type. When the touch sensor is of the external type, the touch panel and the display panel 110 can be separately manufactured and combined during the assembly process. The external touch panel can include a touch panel substrate and a plurality of touch electrodes on the touch panel substrate, etc.

[0056] When the touch sensor exists inside the display panel 110, the touch sensor may be formed on the substrate SUB together with signal lines and electrodes related to display driving, etc. during the manufacturing process of the display panel 110.

[0057] The touch drive circuit TDC can supply a touch drive signal to at least one of the plurality of touch electrodes and sense at least one of the plurality of touch electrodes to generate touch sensing data.

[0058] The touch sensing circuit can perform touch sensing in a self-capacitance sensing method or a mutual-capacitance sensing method.

[0059] When the touch sensing circuit performs touch sensing in the self - capacitance sensing method, the touch sensing circuit can perform touch sensing based on the capacitance between each touch electrode and a touch object (e.g., a finger, a pen, etc.). According to the self - capacitance sensing method, each of the plurality of touch electrodes can serve as both a driving touch electrode and a sensing touch electrode. The touch driving circuit TDC can drive all or part of the plurality of touch electrodes and sense all or part of the plurality of touch electrodes.

[0060] When the touch sensing circuit performs touch sensing in the mutual - capacitance sensing method, the touch sensing circuit can perform touch sensing based on the capacitance between touch electrodes. According to the mutual - capacitance sensing method, the plurality of touch electrodes are divided into driving touch electrodes and sensing touch electrodes. The touch driving circuit TDC can drive the driving touch electrodes and sense the sensing touch electrodes.

[0061] The touch driving circuit TDC and the touch controller T - CTR included in the touch sensing circuit may be implemented as separate devices or as one device. Also, the touch driving circuit TDC and the data driving circuit DDC may be implemented as separate devices or as one device.

[0062] The display device 100 may further include a power supply circuit that supplies various power supplies to the display driving circuit and / or the touch sensing circuit.

[0063] The display device 100 according to the embodiments of the present disclosure may be a mobile terminal such as a smartphone or a tablet, or may be a monitor or a television (TV) of various sizes, etc., and is not limited thereto, and may be various types and various sizes of displays that can display information and images.

[0064] FIG. 3 is a configuration diagram of the display device 100 and an equivalent circuit diagram of sub-pixels according to an embodiment of the present disclosure. In the following description, when explaining the embodiment shown in FIG. 3, unless otherwise specified, it is the same as the description with reference to FIGS. 1 and 2 described above.

[0065] Referring to FIG. 3, a plurality of sub-pixels SP may be arranged in the display area DA of the display device. The plurality of sub-pixels SP are arranged in the display area DA and may not be arranged in the first non-display area and the camera hole.

[0066] Each of the plurality of sub-pixels SP may include a light-emitting element ED and a sub-pixel circuit portion configured to drive the light-emitting element ED.

[0067] The sub-pixel circuit portion may include a driving transistor T1 for driving the light-emitting element ED, a scan transistor T2 for transmitting a data voltage VDATA to the first node N1 of the driving transistor T1, and a storage capacitor Cst for maintaining a constant voltage during one frame.

[0068] The driving transistor T1 may include a first node N1 to which a data voltage is applied, a second node N2 electrically connected to the light-emitting element ED, and a third node N3 to which a driving voltage VDD is applied from a driving voltage line DVL. In the driving transistor T1, the first node N1 is a gate node, the second node N2 may be a source node or a drain node, and the third node N3 may be a drain node or a source node. Hereinafter, for convenience of explanation, in the driving transistor T1, the case where the first node N1 is a gate node, the second node N2 is a source node, and the third node N3 is a drain node will be taken as an example.

[0069] The light-emitting element ED can include an anode electrode AE, a light-emitting layer EL, and a cathode electrode CE. The anode electrode AE may be a pixel electrode disposed in each sub-pixel SP, and can be electrically connected to the second node N2 of the driving transistor T1 of each sub-pixel SP. The cathode electrode CE may be a common electrode commonly disposed in a plurality of sub-pixels SP, and a base voltage VSS may be applied.

[0070] For example, the anode electrode AE may be a pixel electrode, and the cathode electrode CE may be a common electrode. Conversely, the anode electrode AE may be a common electrode, and the cathode electrode CE may be a pixel electrode. Hereinafter, for convenience of explanation, it is assumed that the anode electrode AE is a pixel electrode and the cathode electrode CE is a common electrode.

[0071] The light-emitting element ED can have a predetermined light-emitting region, and the light-emitting region of the light-emitting element ED can be defined as a region where the anode electrode AE, the light-emitting layer EL, and the cathode electrode CE overlap.

[0072] For example, the light-emitting element ED may be an organic light-emitting diode (OLED: Organic Light Emitting Diode), an inorganic light-emitting diode, or a quantum dot light-emitting element. When the light-emitting element ED is an organic light-emitting diode, the light-emitting layer EL in the light-emitting element ED can include an organic light-emitting layer EL containing an organic substance.

[0073] The scan transistor T2 is controlled to be turned on and off by a scan signal SCAN, which is a gate signal applied via a gate line GL, and can be electrically connected between the first node N1 of the driving transistor T1 and a data line DL.

[0074] The storage capacitor Cst can be electrically connected between the first node N1 and the second node N2 of the driving transistor T1.

[0075] As shown in FIG. 3, the sub-pixel circuit portion can have a 2T (Transistor) 1C (Capacitor) structure including two transistors DT and ST and one capacitor Cst, and in some cases, can further include one or more transistors or one or more capacitors.

[0076] The storage capacitor Cst is not a parasitic capacitor (e.g., Cgs, Cgd) which is an internal capacitor that can exist between the first node N1 and the second node N2 of the driving transistor T1, but can be an external capacitor intentionally designed outside the driving transistor T1. Each of the driving transistor T1 and the scan transistor T2 can be an n-type transistor or a p-type transistor.

[0077] Circuit elements within each sub-pixel SP (especially, a light-emitting element ED implemented by an organic light-emitting diode (OLED) containing an organic substance) are vulnerable to external moisture, oxygen, etc. Therefore, a sealing layer ENCAP may be disposed on the display panel 110 to prevent external moisture and oxygen from penetrating into the circuit elements (especially, the light-emitting element ED). The sealing layer ENCAP can be disposed to cover the light-emitting element ED.

[0078] FIG. 4 is an enlarged view of the region A in FIG. 1. The region A in FIG. 1 is a region within the display region DA, and may be a region including the camera hole CH and its peripheral region. In the following description, when explaining the embodiment shown in FIG. 4, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 3 described above.

[0079] Referring to FIG. 4, the camera hole CH can be located within the display region DA. For example, the camera hole CH may be island-shaped within the display region DA, and the display region DA can surround the periphery of the camera hole CH.

[0080] The first non-display area NDA1 can surround the camera hole CH. For example, the first non-display area NDA1 can be located between the display area DA and the camera hole CH. The first non-display area NDA1 may be a non-display area located within the display area DA and surrounding the camera hole CH.

[0081] The dam DAM or the dam structure DAM can be located in the first non-display area NDA1. The dam DAM may refer to a structure for controlling the flow of one of a plurality of insulating films included in the display device. For example, the dam DAM may be a structure for controlling the flow of an organic insulating film located above a light-emitting element located above the substrate. More specifically, the insulating film may be an organic film that is part of a sealing layer that seals a plurality of light-emitting elements. FIG. 4 shows an example in which there is only one dam DAM in the first non-display area NDA1, but the present disclosure is not limited to these examples, and examples in which two or more dams are located in the first non-display area NDA1 are also included in the examples of the present disclosure.

[0082] The dam DAM can be located surrounding the camera hole CH. For example, the dam DAM may have a closed curve shape that completely surrounds the camera hole CH. By locating the dam DAM surrounding the camera hole CH, the flow of the organic film that is part of the sealing layer can be effectively controlled at the boundary of the peripheral portion of the camera hole CH.

[0083] The cut-off portion area STA can be located in the first non-display area NDA1. The cut-off portion area STA may mean an area where a plurality of cut-off portions are located. The cut-off portion may be a structure for blocking the penetration of external moisture from the camera hole CH to the display area DA, and may also refer to a structure for cutting the cathode electrode formed by full-surface evaporation on the organic layer and / or the substrate of the light-emitting element to block the penetration path of moisture.

[0084] The disconnection area STA can include an inner disconnection area ISTA and an outer disconnection area OSTA. The inner disconnection area ISTA may be a disconnection area located inside the dam DAM with reference to the display area DA. The inner disconnection area ISTA may be an area where a plurality of disconnection parts located inside the dam DAM are located with reference to the display area DA. The outer disconnection area OSTA may be a disconnection area located outside the dam DAM with reference to the display area DA. The outer disconnection area OSTA may be an area where a plurality of disconnection parts located outside the dam DAM are located with reference to the display area DA.

[0085] A moisture permeation prevention structure may be located in the disconnection area STA. By locating a moisture permeation prevention structure in the disconnection area STA, it is possible to effectively prevent external moisture from penetrating into the light-emitting elements located in the display area DA through the camera hole CH. The moisture permeation prevention structure can be located in the outer disconnection area OSTA and / or the inner disconnection area ISTA. In the present disclosure, the moisture permeation prevention structure located in the outer disconnection area OSTA may be referred to as an outer moisture permeation prevention structure, and the moisture permeation prevention structure located in the inner disconnection area ISTA may be referred to as an inner moisture permeation prevention structure.

[0086] Among the first non-display areas NDA1, an area surrounding the inner disconnection area ISTA and adjacent to the display area DA may be referred to as a variable bezel area VBA. Signal lines for transmitting signals to a plurality of light-emitting elements located in the display area DA may be located in the variable bezel area VBA.

[0087] FIG. 5 is a cross-sectional view of the display device 100 according to an embodiment of the present disclosure. More specifically, FIG. 5 is a cross-sectional view of the A-B portion of FIG. 4. In the following description, when explaining the embodiment shown in FIG. 5, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 4 described above.

[0088] Referring to FIG. 5, the display device can include a transistor forming part, a light emitting element forming part, and an encapsulation part when viewed from a vertical structure.

[0089] The transistor forming part can include a substrate SUB, a first buffer layer BUF1 on the substrate SUB, and various transistors, storage capacitors, and various electrodes and signal wirings formed on the first buffer layer BUF.

[0090] The substrate SUB can include an insulating material. For example, the substrate SUB can include glass or plastic. The substrate SUB may have a single-layer structure or a multilayer structure. For example, the substrate SUB may have a multilayer structure. The substrate SUB can include a first substrate SUB1 and a second substrate SUB2, and can include an intermediate film IPD between the first substrate SUB1 and the second substrate SUB2. The first substrate SUB1 and the second substrate SUB2 can include the same material. For example, the first substrate SUB1 and the second substrate SUB2 may be polyimide (PI) substrates. The intermediate film IPD may be a single-layer or multilayer inorganic film of silicon nitride (SiN x ) or silicon oxide (SiO x ). By disposing the intermediate film IPD between the first substrate SUB1 and the second substrate SUB2, it is possible to block moisture components from passing through the lower first substrate SUB1 and penetrating into the transistors, and improve the reliability of the display device.

[0091] The first buffer layer BUF1 may be a single film or a multilayer film. When the first buffer layer BUF1 is a multilayer film, the first buffer layer BUF1 can include a multi-buffer layer MBUF and an active buffer layer ABUF.

[0092] Various transistors, storage capacitors, and various electrodes and signal wirings may be formed on the first buffer layer BUF1. For example, the transistors formed on the first buffer layer BUF1 can be composed of the same material and located in the same layer. Or, the transistors formed on the first buffer layer BUF1 can be composed of different materials and located in different layers.

[0093] The first active layer ACT1 may be located on the first buffer layer. The first active layer ACT1 is a layer that constitutes a transistor and can include a channel region that overlaps with the first gate electrode GAT1, a first source connection region located on one side of the channel region, and a first drain connection region located on the other side. The first active layer ACT1 may refer to the active layer of the transistor or a semiconductor layer formed of the same material as this. Therefore, the first active layer ACT1 can constitute a transistor or other circuit elements and signal lines.

[0094] The first gate insulating film GI1 may be located on the first active layer ACT1. The first gate electrode GAT1 may be located on the first gate insulating film GI1. The first gate electrode GAT1 may refer to the gate electrode of the transistor or a metal layer formed of the same material as this. Therefore, the first gate electrode GAT1 can constitute a transistor or other circuit elements and signal lines. The first gate electrode GAT1 can include a conductive material. For example, the first gate electrode GAT1 can include a single layer or a multilayer of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W) or an alloy thereof, but is not limited thereto. For example, the first gate electrode GAT1 may be composed of a double layer of Mo / Ti.

[0095] The first interlayer insulating film ILD1 may be located on the first gate electrode GAT1. The first interlayer insulating layer ILD1 is silicon nitride (SiNx ) or a single layer or multiple layers of silicon oxide (SiO x ), and is not limited thereto.

[0096] The second buffer layer BUF2 can be disposed on the first interlayer insulating film ILD1. The second buffer layer BUF2 may be a single layer or multiple layers of silicon nitride (SiN x ) or a single layer or multiple layers of silicon oxide (SiO x ), and is not limited thereto.

[0097] The second active layer ACT2 may be located on the second buffer layer BUF2. The second active layer ACT2 can also refer to the active layer of a transistor or a semiconductor layer formed of the same material as this. Therefore, the second active layer ACT2 can constitute a transistor or other circuit elements and signal lines.

[0098] The second gate insulating film GI2 may be located on the second active layer ACT2. The second gate insulating film GI2 may be a single layer or multiple layers of silicon nitride (SiN x ) or a single layer or multiple layers of silicon oxide (SiO x ), and is not limited thereto.

[0099] The second gate electrode GAT2 may be located on the second gate insulating film GI2. The second gate electrode GAT2 may refer to the gate electrode of a transistor or a metal layer formed of the same material as this. Therefore, the second gate electrode GAT2 can constitute a transistor or other circuit elements and signal lines. The second gate electrode GAT2 can contain a conductive substance. For example, the second gate electrode GAT2 can be a single layer or multiple layers of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W) or alloys thereof, but is not limited thereto. For example, the second gate electrode GAT2 may be composed of a Mo / Ti bilayer.

[0100] A second interlayer insulating film ILD2 may be located on the second gate electrode GAT2. A first source / drain electrode SD1 may be located on the second interlayer insulating film ILD2. The first source / drain electrode SD1 may refer to the source / drain electrode of a transistor, or may refer to a metal layer formed of the same material as this. Therefore, the first source / drain electrode SD1 can constitute a transistor, or can constitute other circuit elements and signal lines. The first source / drain electrode SD1 can contain a conductive material. For example, the first source / drain electrode SD1 can contain a single layer or multiple layers of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or an alloy thereof, but is not limited thereto. For example, the first source / drain electrode SD1 may be composed of a Ti / Al / Ti triple layer.

[0101] A first planarization layer PLN1 may be located on the first source / drain electrode SD1.

[0102] A second source / drain electrode SD2 may be located on the first planarization layer PLN1. The second source / drain electrode SD2 may refer to an electrode for electrically connecting the first source / drain electrode SD1 and the light-emitting element ED, or may refer to a metal layer formed of the same material as this. Therefore, the second source / drain electrode SD2 can constitute an electrode for electrically connecting a transistor and a light-emitting element, or can constitute other circuit elements and signal lines. The second source / drain electrode SD2 can contain a conductive material. For example, the second source / drain electrode SD2 can contain a single layer or multiple layers of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or an alloy thereof, but is not limited thereto. For example, the second source / drain electrode SD2 may be composed of a Ti / Al / Ti triple layer.

[0103] Referring to FIG. 5, the storage capacitor Cst can be formed by a first capacitor electrode CAPE1 and a second capacitor electrode CAPE2. In some cases, the storage capacitor Cst can also be formed by three or more capacitor electrodes, or can be in a form where two or more capacitors are connected in parallel.

[0104] Each of the first capacitor electrode CAPE1 and the second capacitor electrode CAPE2 can be disposed in various metal layers disposed within the display panel 110. For example, the first capacitor electrode CAPE1 can include the same first gate metal as the first gate electrode GAT1 on the first gate insulating film GI1 and can be disposed within the first gate metal layer. For example, the second capacitor electrode CAPE2 can include the same metal as the metal pattern TM on the first interlayer insulating layer ILD1 and can be disposed within the metal pattern layer.

[0105] Referring to FIG. 5, the metal pattern TM can further be included. For example, the metal pattern TM can be disposed between the first interlayer insulating layer ILD1 and the second buffer layer BUF2. For example, the metal pattern TM can include the same metal as the second capacitor electrode CAPE2 on the first interlayer insulating layer ILD1 and can be disposed within the metal pattern layer. The metal pattern TM can include a conductive material. For example, the metal pattern TM can include a single layer or a multilayer of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or an alloy thereof, but is not limited thereto. For example, the metal pattern TM can be composed of a single layer of Mo, a single layer of a MoTi alloy, or a Mo / Ti bilayer. The metal pattern TM can be disposed in the display area DA and / or the non-display area NDA. The metal pattern TM can be used as a shield metal.

[0106] A second planarization layer PLN2 may be located on the second source-drain electrode SD2.

[0107] An anode electrode AE may be positioned on the second planarization layer PLN2. The anode electrode AE may be a pixel electrode. The anode electrode AE can constitute a light-emitting element ED. Although not shown in FIG. 5, a cathode electrode may be positioned on the light-emitting layer EL. In such an example, the anode electrode AE may be a pixel electrode, and the cathode electrode may be a common electrode. The cathode electrode, which is a common electrode, may be deposited over the entire display area DA.

[0108] A bank BANK may be positioned on the anode electrode AE. The bank BANK may be arranged while covering a part of the anode electrode AE. A part of the bank BANK corresponding to the light-emitting region EA of the sub-pixel may be open.

[0109] A part of the anode electrode AE can be exposed at the opening (the opened part) of the bank BANK. The light-emitting layer EL can be positioned on the side surface of the bank BANK and at the opening (the opened part) of the bank BANK. All or part of the light-emitting layer EL can be positioned between adjacent banks BANK.

[0110] At the opening of the bank BANK, the light-emitting layer EL can be in contact with the anode electrode AE. A cathode electrode may be arranged on the light-emitting layer EL. A light-emitting element ED may be formed by the anode electrode AE, the light-emitting layer EL, and the cathode electrode. The light-emitting layer EL can include an organic film.

[0111] A sealing layer ENCAP may be arranged on the aforementioned light-emitting element ED. The sealing layer ENCAP can have a single-layer structure or a multilayer structure. For example, as shown in FIG. 5, the sealing layer ENCAP can include a first sealing layer PAS1, a second sealing layer PCL, and a third sealing layer PAS2.

[0112] For example, the first sealing layer PAS1 and the third sealing layer PAS2 may be inorganic films, and the second sealing layer PCL may be an organic film. Among the first sealing layer PAS1, the second sealing layer PCL, and the third sealing layer PAS2, the second sealing layer PCL may be the thickest. Thereby, the second sealing layer PCL can serve as a planarization layer. The first sealing layer PAS1 is also referred to as the first inorganic sealing layer, the second sealing layer PCL is also referred to as the organic sealing layer, and the third sealing layer PAS2 is also referred to as the second inorganic sealing layer.

[0113] The first sealing layer PAS1 is disposed on the cathode electrode and can be disposed closest to the light-emitting element ED. The first sealing layer PAS1 can be formed from an inorganic insulating material capable of low-temperature vapor deposition. For example, the first sealing layer PAS1 may be silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiON), aluminum oxide (Al2O3), or the like. Since the first sealing layer PAS1 is vapor-deposited in a low-temperature atmosphere, during the vapor-deposition process, the first sealing layer PAS1 can prevent damage to the light-emitting layer EL containing organic substances that are vulnerable to a high-temperature atmosphere.

[0114] The second sealing layer PCL can be formed with an area smaller than that of the first sealing layer PAS1. In this case, the second sealing layer PCL can be formed so as to expose both ends of the first sealing layer PAS1. The second sealing layer PCL serves as a buffer to relieve the stress between the layers due to the warp of the display device 100 and can also serve to enhance the planarization performance. For example, the second sealing layer PCL may be an acrylic resin, an epoxy resin, a polyimide, a polyethylene, or silicon oxycarbon (SiOC), etc., and can be formed from an organic insulating material. For example, the second sealing layer PCL can also be formed via an inkjet method.

[0115] The third passivation layer PAS2 can be formed on the substrate SUB on which the second passivation layer PCL is formed so as to cover the upper surfaces and side surfaces of the second passivation layer PCL and the first passivation layer PAS1 respectively. The third passivation layer PAS2 can minimize or block the penetration of external moisture and oxygen into the first passivation layer PAS1 and the second passivation layer PCL. For example, the third passivation layer PAS2 is silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiON) or aluminum oxide (Al2O3) and is formed from an inorganic insulating material such as this.

[0116] Referring to FIG. 5, the light-emitting element ED can be arranged so as to overlap the light-emitting region EA on a plane. The light-emitting element ED can include an anode electrode AE, a light-emitting layer EL, and a cathode electrode CE. The light-emitting layer EL can have a plurality of portions. For example, the light-emitting layer EL can include a first portion FPEL, a second portion SPEL, and a third portion TPEL. The first portion FPEL, the second portion SPEL, and the third portion TPEL of the light-emitting layer EL can be separated from each other. It can also be said that the first portion FPEL, the second portion SPEL, and the third portion TPEL of the light-emitting layer EL are separated from each other. For example, the first portion FPEL of the light-emitting layer EL can be positioned so as to overlap the light-emitting region EA on a plane. This is shown in FIGS. 6, 7, 10, 11, and 13.

[0117] Also, the cathode electrode CE can have a plurality of portions. For example, the cathode electrode CE can include a first portion FPCE, a second portion SPCE, and a third portion TPCE. The first portion FPCE, the second portion SPCE, and the third portion TPCE of the cathode electrode CE can be separated from each other. Also, it can be said that the first portion FPCE, the second portion SPCE, and the third portion TPCE of the cathode electrode CE are separated from each other. For example, the first portion FPCE of the cathode electrode CE can be positioned so as to overlap the light-emitting region EA on a plane. This is shown in FIGS. 6, 7, 10, 11, and 13.

[0118] Referring to FIG. 5, when the touch sensor TS is of a type built into the display panel, the touch sensor TS may be disposed on the encapsulation layer ENCAP. The structure of the touch sensor will be described in detail as follows.

[0119] A touch buffer film T-BUF may be disposed on the encapsulation layer ENCAP. The touch sensor TS may be disposed on the touch buffer film T-BUF.

[0120] The touch sensor TS can include a touch sensor metal TSM and a bridge metal BRG located in different layers.

[0121] A touch interlayer insulating film T-ILD may be disposed between the touch sensor metal TSM and the bridge metal BRG.

[0122] For example, it can include a first touch sensor metal TSM, a second touch sensor metal TSM, and a third touch sensor metal TSM arranged such that the touch sensor metals TSM are adjacent to each other. When there is a third touch sensor metal TSM between the first touch sensor metal TSM and the second touch sensor metal TSM, and the first touch sensor metal TSM and the second touch sensor metal TSM must be electrically connected to each other, the first touch sensor metal TSM and the second touch sensor metal TSM can be electrically connected to each other via a bridge metal BRG in different layers. The bridge metal BRG can be insulated from the third touch sensor metal TSM by the touch interlayer insulating film T-ILD.

[0123] When the touch sensor TS is formed on the display panel, chemicals (such as developer or etching solution) used in the process or moisture from the outside may be generated. By disposing the touch sensor TS on the touch buffer film T-BUF, it is possible to prevent chemicals, moisture, etc. from penetrating into the light-emitting layer EL containing organic substances during the manufacturing process of the touch sensor TS. Thereby, the touch buffer film T-BUF can prevent damage to the light-emitting layer EL vulnerable to chemicals or moisture.

[0124] The touch buffer film T-BUF can be formed at a low temperature of a certain temperature (for example, 100 degrees (°C)) or lower in order to prevent damage to the light-emitting layer EL containing organic substances that are vulnerable to high temperatures, and is formed from an organic insulating material having a low dielectric constant of 1 to 3. For example, the touch buffer film T-BUF can be formed from a material such as an acrylic-based, epoxy-based, or siloxane-based material. Due to the warping of the display device, the encapsulation layer ENCAP may be damaged, and the touch sensor metal located on the touch buffer film T-BUF may be damaged. Even if the display device 100 warps, the touch buffer film T-BUF having a planarization performance with an organic insulating material can prevent damage to the encapsulation layer ENCAP and / or damage to the metals TSM and BRG constituting the touch sensor TS.

[0125] Referring to FIG. 5, touch lines TL1 and TL2 for electrically connecting the touch electrode TE and the touch pad can be arranged. The touch lines TL1 and TL2 can be composed of at least one of the sensor metal TSM and the bridge metal BRG.

[0126] In the case where the display panel 110 incorporates a touch sensor, the touch lines TL1 and TL2 can extend along the inclined surface of the outer contour of the encapsulation layer ENCAP and extend to the non-display area NDA beyond the upper part of the dam DAM.

[0127] The protective layer PAC may be arranged while covering the touch sensor TS. The protective layer PAC may be an organic insulating film.

[0128] The display device is located on the substrate SUB and can include a plurality of insulating films located below a plurality of light-emitting elements ED. In the present disclosure, the plurality of insulating films located on the substrate SUB and below the plurality of light-emitting elements ED may refer to the first buffer layer BUF1 to the second planarization layer PLN2 and the insulating films located therebetween.

[0129] The display device can include a moisture permeation prevention structure MPS. The moisture permeation prevention structure MPS can be disposed in the first non-display area NDA1. In the embodiment shown in FIG. 5, the moisture permeation prevention structure MPS may be located in the outer cut-off portion area OSTA. In the present disclosure, the moisture permeation prevention structure MPS located in the outer cut-off portion area OSTA may be referred to as an outer moisture permeation prevention structure.

[0130] The moisture permeation prevention structure MPS can include at least one undercut area of a plurality of insulating films. The moisture permeation prevention structure MPS of the display device according to the embodiment shown in FIG. 5 can be disposed on the substrate SUB and include an undercut area located in an inorganic insulating film positioned below a plurality of light-emitting elements ED. The fact that the undercut area is located in the inorganic insulating film can mean that the undercut area is formed by etching the inorganic insulating film. For example, the above-mentioned inorganic insulating film may be any one or more of a multi-buffer layer MBUF, an active buffer layer ABUF, a first gate insulating film GI1, a first interlayer insulating film ILD1, a second buffer layer BUF2, a second gate insulating film GI2, and a second interlayer insulating film ILD2. The display device according to the embodiment shown in FIG. 5 includes a moisture permeation prevention structure MPS in which the active buffer layer ABUF, the first gate insulating film GI1, the first interlayer insulating film ILD1, the second buffer layer BUF2, the second gate insulating film GI2, and the second interlayer insulating film ILD2 include an undercut area.

[0131] The first non-display area NDA1 can include a variable bezel area VBA, an inner cut-off portion area ISTA, a dam area DAMA, and an outer cut-off portion area OSTA. The dam area DAMA may be an area where a dam DAM for controlling the flow of the second sealing layer PCL is located. Therefore, the dam DAM can be located in the first non-display area NDA1. The dam DAM can include one or more insulating films. For example, the dam DAM can include a second planarization layer PLN2 and a bank BANK located on the second planarization layer PLN2.

[0132] The cut-off part ST can be located in the first non-display area NDA1. By locating the cut-off part ST in the first non-display area NDA1, it is possible to prevent external moisture from penetrating into the display area DA from the camera hole CH. The cut-off part ST may refer to a structure for cutting off the light-emitting layer EL and the cathode electrode CE formed by vapor deposition over the entire display area DA and the first non-display area NDA1 of the display device to block the moisture permeation path. The cut-off part ST may refer to a structure in which the light-emitting layer EL and the cathode electrode CE are cut off by a step formed by the second source-drain electrode SD2. For example, the cut-off part ST can include the second source-drain electrode SD2 and the light-emitting layer EL, and can additionally include the cathode electrode CE. In such an example, the second source-drain electrode SD2 may have a triple-layer structure including a first layer, a second layer located on the first layer, and a third layer located on the second layer, and the second layer may have a structure recessed between the first layer and the third layer.

[0133] The cut-off part ST can include an inner cut-off part IST and an outer cut-off part OST. The inner cut-off part IST can be located between the display area DA and the dam DAM. That is, the inner cut-off part IST may refer to a cut-off part located in the inner cut-off part area ISTA. The outer cut-off part OST can be located between the dam DAM and the camera hole CH. That is, the outer cut-off part OST may refer to a cut-off part located in the outer cut-off part area OSTA. By providing the cut-off part ST inside and outside the dam DAM, it is possible to more effectively prevent external moisture from penetrating from the camera hole CH into the display area DA.

[0134] The variable bezel area VBA is located in the first non-display area NDA1 and may be located between the display area DA and the inner cut-off part area ISTA. Signal lines for transmitting signals to a plurality of light-emitting elements located in the display area DA may be located in the variable bezel area VBA. For example, the first gate electrode GAT1, the second gate electrode GAT2, the first source-drain electrode SD1, and the second source-drain electrode SD2 may be located in the variable bezel area VBA. More specifically, a plurality of gate lines may be located in the variable bezel area VBA.

[0135] FIG. 6 is a cross-sectional view of the display device 100 according to an embodiment of the present disclosure. More specifically, FIG. 6 is a cross-sectional view of the portion A-B shown in FIG. 4. Hereinafter, when describing the embodiment shown in FIG. 6, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 5 described above.

[0136] The display device according to the embodiment shown in FIG. 6 is characterized in that, unlike the display device according to the embodiment shown in FIG. 5 including an outer moisture permeation prevention structure, it includes an inner moisture permeation prevention structure. That is, the moisture permeation prevention structure MPS of the display device according to the embodiment shown in FIG. 6 is an inner moisture permeation prevention structure located in the inner isolation portion region ISTA.

[0137] The display device according to an embodiment of the present disclosure can include two or more moisture permeation prevention structures.

[0138] FIG. 7 is a cross-sectional view of the display device 100 according to an embodiment of the present disclosure. More specifically, FIG. 7 is a cross-sectional view of the portion A-B shown in FIG. 4. In the following description, when describing the embodiment shown in FIG. 7, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 6 described above.

[0139] The display device according to the embodiment shown in FIG. 7 is characterized in that, unlike the display device according to the embodiment shown in FIG. 5 that does not include an inner moisture permeation prevention structure and includes an outer moisture permeation prevention structure, it includes an outer moisture permeation prevention structure and an inner moisture permeation prevention structure. That is, the moisture permeation prevention structure MPS of the display device according to the embodiment shown in FIG. 6 is one or more, and can include an inner moisture permeation prevention structure located in the inner isolation portion region ISTA and an outer moisture permeation prevention structure located in the outer isolation portion region OSTA.

[0140] In the display device according to an embodiment of the present disclosure, the light-emitting layer EL can extend from the display region DA to the boundary of the camera hole CH. That is, the light-emitting layer EL can be formed by depositing over the entire area of the display region DA. The light-emitting layer EL may be blocked by the moisture-proof structure MPS. By blocking the light-emitting layer EL with the moisture-proof structure MPS, it is possible to prevent external moisture that has penetrated through the camera hole CH from penetrating into the display region DA through the light-emitting layer EL.

[0141] The moisture-proof structure MPS can include an undercut region. The undercut region can be formed in an inorganic insulating film disposed on the substrate SUB and located below the plurality of light-emitting elements ED.

[0142] Referring to FIG. 7, the moisture-proof structure MPS can include a first moisture-proof structure FMPS and a second moisture-proof structure SMPS. As shown in the figure, the first moisture-proof structure FMPS can be disposed between the dam structure DAM and the camera hole CH on a plane. The dam structure DAM can be disposed between the first moisture-proof structure FMPS and the second moisture-proof structure SMPS on a plane. Also, various structures for moisture prevention can be disposed between the first moisture-proof structure FMPS and the dam structure DAM. Various structures for moisture prevention can also be disposed between the second moisture-proof structure SMPS and the dam structure DAM.

[0143] As described above, the display device according to an embodiment of the present disclosure can include one or more moisture-proof structures disposed in the first non-display region. Hereinafter, the moisture-proof structures that can be included in the embodiments of the present disclosure will be described in more detail.

[0144] FIG. 8 is a cross-sectional view of the moisture-proof structure of the display device 100 according to an embodiment of the present disclosure. In the following description, when explaining the embodiment shown in FIG. 8, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 7 described above.

[0145] Referring to FIG. 8, the moisture permeation prevention structure can include at least one undercut region UCA of a plurality of insulating films. In the embodiment shown in FIG. 8, the undercut region UCA can be formed in the active buffer layer ABUF or the second interlayer insulating film ILD2. The light emitting layer EL can be interrupted at the undercut region UCA.

[0146] The moisture permeation prevention structure MPS can include a metal layer MTL located on the undercut region UCA. The metal layer MTL can be, for example, the second source / drain electrode. The light emitting layer EL can be interrupted at the side surface of the metal layer MTL.

[0147] The metal layer MTL can be composed of, for example, a triple layer. When the metal layer MTL is a triple layer, the metal layer MTL can include a first layer M1, a second layer M2 located on the first layer M1, and a third layer M3 located on the second layer M2.

[0148] The first layer M1 and the third layer M3 can be metal layers of the same material as each other, and the second layer M2 can be a metal layer of a material different from the first layer M1 and the third layer M3. For example, the first layer M1 and the third layer M3 can include titanium (Ti), and the second layer M2 can include aluminum (Al). For example, the metal layer MTL can be a multilayer of a Ti / Al / Ti structure. By selecting such materials for the first layer M1 to the third layer M3, the second layer M2 can be composed of a material with better conductivity, and the first layer M1 and the third layer M3 can be composed of materials that can protect the second layer M2 during the manufacturing process.

[0149] The second layer M2 can have a shape sunken from the first layer M1 and the third layer M3. In other words, the second layer M2 can have a shape in which etching has progressed more than the first layer M1 and the third layer M3 and is sunken from the first layer M1 and the third layer M3. Therefore, the first layer M1 and the third layer M3 can have a shape protruding from the second layer M2. Also, the first layer M1 can have a shape protruding from the third layer M3. Here, being sunken or protruding means being sunken or protruding in a direction parallel to the substrate SUB, and can mean protruding or sunken with reference to the undercut region UCA. By the first layer M1, the second layer M2, and the third layer M3 having the above-described shapes, the light-emitting layer EL can be effectively blocked by the moisture-proof structure MPS. In particular, the moisture-proof structure MPS can block the light-emitting layer EL at least two or more times. For example, the light-emitting layer EL can be blocked at the undercut region UCA and at the side surface of the metal layer MTL. More specifically, the light-emitting layer EL can be blocked between the first layer M1 and the second layer M2. Also, the light-emitting layer EL can be blocked between the second layer M2 and the third layer M3. Also, the light-emitting layer EL can be blocked between the first layer M1 and the third layer M3.

[0150] The second layer M2 can have a shape in which the interface with the first layer M1 protrudes more than the interface with the third layer M3. Such a shape can be formed by etching the second layer M2 more than the first layer M1 and the third layer M3.

[0151] The undercut region UCA can mean a region undercut with respect to the metal layer MTL. In particular, it may refer to a region undercut at the lower part of the first layer M1.

[0152] The moisture-proof structure MPS shown in FIG. 8 can be formed as follows.

[0153] First, a plurality of insulating films can be formed on a substrate SUB. The plurality of insulating films may be any one or more of a multi-buffer layer MBUF, an active buffer layer ABUF, a first gate insulating film GI1, a first interlayer insulating film ILD1, a second buffer layer BUF2, a second gate insulating film GI2, and a second interlayer insulating film ILD2. A metal layer MTL may be formed by patterning on the plurality of insulating films. The metal layer MTL can be arranged in the order of a first layer M1, a second layer M2, and a third layer M3.

[0154] A second planarization layer PLN2 may be formed to cover a part of the metal layer MTL. In this case, in the process of developing the second planarization layer PLN2, the exposed second layer M2 of the metal layer MTL may be partially etched.

[0155] After an anode electrode material is deposited on the second planarization layer PLN2, a wet etching process can be advanced to form an anode electrode. In this case, in the process of advancing the wet etching process, the exposed second layer M2 of the metal layer MTL may be additionally etched.

[0156] In order to pattern a part of the plurality of insulating films, a dry etching process may be advanced. In the process of advancing the dry etching process, a region where a part of the insulating film disposed under the metal layer MTL is etched inside the lower part of the metal layer MTL to form an undercut may be formed. For example, a region where the second interlayer insulating film ILD2, the second gate insulating film GI2, the second buffer layer BUF2, the first interlayer insulating film ILD1, the first gate insulating film GI1, and the active buffer layer ABUF disposed under the metal layer MTL are etched inside the lower part of the metal layer MTL to form an undercut may be formed.

[0157] A bank may be formed so as to cover a part of the anode electrode AE. In this case, in the process of developing the bank, the exposed second layer M2 of the metal layer MTL may be additionally etched. Through a dry etching process, a wet etching process, a developing process, etc., the metal layer MTL may form a structure in which the second layer M2 is recessed between the first layer M1 and the third layer M3, and an undercut region UCA may be formed below the metal layer MTL.

[0158] The light-emitting layer EL and the cathode electrode CE may be sequentially formed. In this case, the light-emitting layer EL can be disconnected at the side surface of the metal layer MTL and the undercut region UCA.

[0159] Referring to FIG. 8, the light-emitting layer EL can have a plurality of parts. As described above, the light-emitting layer EL can include a first part FPEL, a second part SPEL, and a third part TPEL. The light-emitting layer EL can further include a fourth part FRPEL. As shown in the drawing, the first part FPEL, the second part SPEL, the third part TPEL, and the fourth part FRPEL of the light-emitting layer EL can be separated from each other. It can also be said that the first part FPEL, the second part SPEL, the third part TPEL, and the fourth part FRPEL of the light-emitting layer EL are separated from each other.

[0160] Here, the second part SPEL of the light-emitting layer EL can be located on the first layer M1 of the metal layer MTL. The first layer M1 of the metal layer MTL can further extend in a first direction (for example, a side surface direction) more than a part of the insulating film in order to form the undercut region UCA. For example, the first layer M1 of the metal layer MTL can further extend more than a part of the insulating film such as the second interlayer insulating film ILD2, the second gate insulating film GI2, the second buffer layer BUF2, the first interlayer insulating film ILD1, and the first gate insulating film GI1 in order to form the undercut region UCA.

[0161] The third portion TPEL of the light-emitting layer EL can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can cover the side surface of the insulating film including the second buffer layer BUF2, the first interlayer insulating film ILD1, the first gate insulating film GI1, and the first buffer layer BUF1. Although the third portion TPEL of the light-emitting layer EL is separated from the second portion SPEL of the light-emitting layer EL, the third portion TPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL can overlap each other in a plane.

[0162] The fourth portion FRPEL of the light-emitting layer EL can be located on the metal layer MTL. The third layer M3 of the metal layer MTL can extend in a first direction (e.g., the side direction) more than a part of the second layer M2 of the metal layer MTL. For example, the fourth portion FRPEL of the light-emitting layer EL can be located on an extended part of the third layer M3 of the metal layer MTL. It can be said that both the fourth portion FRPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL are located on the first layer M1 of the metal layer MTL, but the fourth portion FRPEL of the light-emitting layer EL is directly located on the third layer M3 of the metal layer MTL, and the second portion SPEL of the light-emitting layer EL is directly located on the first layer M1 of the metal layer MTL.

[0163] Also, the cathode electrode CE can have a plurality of portions. As described above, the cathode electrode CE can include the first portion FPCE, the second portion SPCE, and the third portion TPCE. The cathode electrode CE can further include a fourth portion FRPCE. As shown in the figure, the first portion FPCE, the second portion SPCE, the third portion TPCE, and the fourth portion FRPCE of the cathode electrode CE can be separated from each other. Also, it can be said that the first portion FPCE, the second portion SPCE, the third portion TPCE, and the fourth portion FRPCE of the cathode electrode CE are separated from each other.

[0164] Here, the second portion SPCE of the cathode electrode CE can be located on the first layer M1 of the metal layer MTL. For example, the second portion SPCE of the cathode electrode CE can be located on the second portion SPEL of the light-emitting layer EL.

[0165] The third portion TPCE of the cathode electrode CE can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE can overlap with the second portion SPCE of the cathode electrode CE in a plane while being separated from the second portion SPCE of the cathode electrode CE.

[0166] The fourth portion FRPCE of the cathode electrode CE can be located on the metal layer MTL. For example, the fourth portion FRPCE of the cathode electrode CE can be located on the fourth portion FRPEL of the light-emitting layer EL. Both the fourth portion FRPCE of the cathode electrode CE and the fourth portion FRPEL of the light-emitting layer EL may be separated from the second layer M2 of the metal layer MTL. It can be said that both the fourth portion FRPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE are located on the first layer M1 of the metal layer MTL. Further, the fourth portion FRPCE of the cathode electrode CE can be in direct contact with the fourth portion FRPEL of the light-emitting layer EL, and the second portion SPCE of the cathode electrode CE can be in direct contact with the second portion SPEL of the light-emitting layer EL. Such a configuration is also shown in FIG. 9, and the description thereof is omitted.

[0167] FIG. 9 is a cross-sectional view of a moisture-proof structure of the display device 100 according to an embodiment of the present disclosure. In the following description, when explaining the embodiment shown in FIG. 9, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 8 described above.

[0168] Referring to FIG. 9, the moisture-proof structure MPS can include at least one undercut region UCA of a plurality of insulating films. In the embodiment shown in FIG. 9, the undercut region UCA can be formed in the second buffer layer BUF2 to the second interlayer insulating film ILD2. The light-emitting layer EL can be interrupted in the undercut region UCA.

[0169] The moisture permeation prevention structure MPS shown in FIG. 9 may be different from the moisture permeation prevention structure MPS shown in FIG. 8 in terms of the shape surface of the undercut region UCA. The moisture permeation prevention structure MPS shown in FIG. 9 can have the undercut region UCA include a stepped portion STP.

[0170] The stepped portion STP can mean a step formed in the undercut region UCA where a part of the insulating film is not etched inside the lower part of the metal layer MTL. For example, when the second interlayer insulating film ILD2 and the second gate insulating film GI2 are etched inside the lower part of the metal layer MTL, and the second buffer layer BUF2, the first interlayer insulating film ILD1, and the first gate insulating film GI1 are not etched inside the lower part of the metal layer MTL, the stepped portion STP can be composed of the second buffer layer BUF2, the first interlayer insulating film ILD1, and the first gate insulating film GI1.

[0171] In some embodiments, the third portion TPEL of the light-emitting layer EL can be disposed on the stepped portion STP, covering the side surfaces of the second gate insulating film GI2, the second buffer layer BUF2, and the second interlayer insulating film ILD2, and covering the upper surface of the second buffer layer BUF2. Also, the third portion TPEL of the light-emitting layer EL can cover the side surfaces of the second buffer layer BUF2, the first gate insulating film GI1, and the first interlayer insulating film ILD1. Also, the third portion TPEL of the light-emitting layer EL can cover the side surfaces of the second buffer layer BUF2, the first interlayer insulating film ILD1, and the first gate insulating film GI1.

[0172] The moisture permeation prevention structure MPS shown in FIG. 9 can be formed as follows.

[0173] First, a plurality of insulating films may be formed on the substrate SUB. The plurality of insulating films may be any one or more of a multi-buffer layer MBUF, an active buffer layer ABUF, a first gate insulating film GI1, a first interlayer insulating film ILD1, a second buffer layer BUF2, a second gate insulating film GI2, and a second interlayer insulating film ILD2. Some of the plurality of insulating films may be etched adjacent to the region where the moisture-proof structure MPS will be formed later. For example, the second gate insulating film GI2 and the second interlayer insulating film ILD2 may be etched so as to correspond to the region where the metal layer MTL will be patterned later, and the second buffer layer BUF2 may be exposed. In this case, a part of the exposed second buffer layer BUF2 may also be etched. Specifically, when a mask with an opening formed thereon is positioned on the plurality of insulating films and the dry etching process is advanced, the second gate insulating film GI2 and the second interlayer insulating film ILD2 are etched, and the second buffer layer BUF2 can be exposed. Such an etching process can be called a first dry etching process. The opening formed in the mask can be formed at a position corresponding to the region where the metal layer MTL will be patterned later.

[0174] A metal layer MTL may be formed by patterning on the plurality of insulating films. The metal layer MTL can be arranged in the order of a first layer M1, a second layer M2, and a third layer M3.

[0175] A second planarization layer PLN2 may be formed so as to cover a part of the metal layer MTL. In this case, in the process of developing the second planarization layer PLN2, a part of the exposed second layer M2 of the metal layer MTL may be etched.

[0176] After an anode electrode material is deposited on the second planarization layer PLN2, a wet etching process may be advanced to form an anode electrode. In this case, in the process of advancing the wet etching process, the exposed second layer M2 of the metal layer MTL may be additionally etched.

[0177] In order to pattern some of the insulating films among the plurality of insulating films, a dry etching process may be carried out. During the process of carrying out the dry etching process, some of the insulating films disposed under the metal layer MTL are etched inside the lower part of the metal layer MTL, an undercut region is formed, and some of the exposed insulating films may be etched. Such an etching process can be called a second dry etching process. During the process of carrying out the second dry etching process, the isotropic conditions of the dry etching process can be used. For example, when the second dry etching process is carried out using the metal layer MTL as a mask, the second interlayer insulating film ILD2 and the second gate insulating film GI2 disposed under the metal layer MTL are etched inside the lower part of the metal layer MTL, and an undercut region is formed. At the same time, the second buffer layer BUF2, the first interlayer insulating film ILD1, and the first gate insulating film GI1 are etched in the substrate SUB direction to form a stepped shape. In this case, the active buffer layer ABUF may also be partially etched in the substrate SUB direction.

[0178] That is, when the process of etching the plurality of insulating films disposed in the region where the moisture-proof structure MPS is located is carried out by being divided into a first dry etching process and a second dry etching process, an undercut region and a stepped shape may be formed simultaneously under the metal layer MTL.

[0179] A bank may be formed so as to cover a part of the anode electrode AE. In this case, during the process of developing the bank, the exposed second layer M2 of the metal layer MTL may be additionally etched. Through processes such as a dry etching process, a wet etching process, and a developing process, the metal layer MTL may have a structure in which the second layer M2 is sunken between the first layer M1 and the third layer M3, and an undercut region UCA and a stepped portion STP may be formed under the metal layer MTL.

[0180] The light-emitting layer EL and the cathode electrode CE may be sequentially formed. In this case, the light-emitting layer EL can be disconnected at the side surface of the metal layer MTL and the undercut region UCA.

[0181] FIG. 10 is a cross-sectional view of the display device 100 according to an embodiment of the present disclosure. More specifically, FIG. 10 is a cross-sectional view of the portion A-B shown in FIG. 4.

[0182] In the following description, when explaining the embodiment shown in FIG. 10, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 9 described above.

[0183] Unlike the display device according to the embodiments shown in FIGS. 5 to 7 in which the moisture barrier structure includes the undercut region of the inorganic insulating film, the display device according to the embodiment shown in FIG. 10 can include the undercut region of the organic insulating film. More specifically, the moisture barrier structure of the display device according to the embodiment shown in FIG. 10 includes an inner moisture barrier structure and can include the undercut region of the organic insulating film.

[0184] The moisture barrier structure MPS can include an undercut region. The undercut region can be formed in the organic insulating film disposed on the substrate SUB and located below the plurality of light-emitting elements ED.

[0185] FIG. 11 is a cross-sectional view of the display device 100 according to an embodiment of the present disclosure. More specifically, FIG. 11 is a cross-sectional view of the portion A-B shown in FIG. 4.

[0186] In the following description, when explaining the embodiment shown in FIG. 11, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 10 described above.

[0187] Unlike the display device according to the embodiment shown in FIG. 10 that includes an inner moisture barrier structure and does not include an outer moisture barrier structure, the display device according to the embodiment shown in FIG. 11 can include an outer moisture barrier structure and may not include an inner moisture barrier structure. Also, similar to the display device according to the embodiment shown in FIG. 10, the display device according to the embodiment shown in FIG. 11 can have a moisture barrier structure that includes the undercut region of the organic insulating film.

[0188] The moisture permeation prevention structure MPS can include an undercut region. The undercut region can be disposed on the substrate SUB and formed in an organic insulating film located below the plurality of light emitting elements ED.

[0189] The embodiments shown in FIGS. 10 and 11 can provide a display device including a moisture permeation prevention structure including a so-called undercut region of an organic insulating film. Further, the embodiment shown in FIG. 10 includes an inner moisture permeation prevention structure, and the embodiment shown in FIG. 11 includes an outer moisture permeation prevention structure. However, the embodiments of the present disclosure are not limited to such display devices, and embodiments including an inner moisture permeation prevention structure and / or an outer moisture permeation prevention structure and in which the moisture permeation prevention structure includes an undercut region of an organic insulating film also fall within the scope of the embodiments of the present disclosure.

[0190] FIG. 12 is a cross-sectional view of the moisture permeation prevention structure of the display device 100 shown in FIGS. 10 and 11. In the following description, when explaining the embodiment shown in FIG. 12, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 11 described above.

[0191] The moisture permeation prevention structure MPS can include an undercut region UCA. The undercut region UCA can be disposed on the substrate and formed in an organic insulating film located below the plurality of light emitting elements. That the undercut region UCA is formed in the organic insulating film can mean that at least one or more organic insulating films are etched to form the undercut region UCA. The organic insulating film in which the undercut region UCA is formed may be, for example, one or more of the first planarization layer PLN1 and the second planarization layer. FIG. 12 shows an embodiment in which the moisture permeation prevention structure MPS includes the first planarization layer PLN1 and the undercut region UCA is formed in the first planarization layer PLN1, but the embodiments of the present disclosure are not limited to such embodiments. For example, the embodiments of the present disclosure can include embodiments in which the moisture permeation prevention structure can include one or more of the first planarization layer PLN1 and the second planarization layer, and an undercut region is formed in one or more of the first planarization layer PLN1 and the second planarization layer.

[0192] The moisture permeation prevention structure MPS can include a metal layer MTL located on the undercut region UCA. The metal layer MTL may be, for example, the second source-drain electrode. The light-emitting layer EL can be interrupted at the side surface of the metal layer MTL.

[0193] The metal layer MTL can be composed of, for example, a triple layer. When the metal layer MTL is a triple layer, the metal layer MTL can include a first layer M1, a second layer M2 located on the first layer M1, and a third layer M3 located on the second layer M2.

[0194] The second layer M2 can have a shape sunken from the first layer M1 and the third layer M3. In other words, the second layer M2 can have a shape in which etching progresses more than the first layer M1 and the third layer M3 and is sunken from the first layer M1 and the third layer M3. Therefore, the first layer M1 and the third layer M3 can have a shape protruding from the second layer M2. Here, being sunken or protruding means being sunken or protruding in a direction parallel to the substrate SUB, and can mean protruding or sunken with respect to the undercut region UCA. By the first layer M1, the second layer M2, and the third layer M3 having the above-described shapes, the light-emitting layer EL can be effectively interrupted by the moisture permeation prevention structure MPS. In particular, the light-emitting layer EL can be interrupted at least two or more times by the moisture permeation prevention structure MPS. For example, the light-emitting layer EL can be interrupted at the undercut region UCA and at the side surface of the metal layer MTL. More specifically, the light-emitting layer EL can be interrupted between the first layer M1 and the second layer M2.

[0195] The second layer M2 can have a shape in which the interface with the first layer M1 protrudes more than the interface with the third layer M3. Such a shape can be formed by etching the second layer M2 more than the first layer M1 and the third layer M3.

[0196] The undercut region UCA can mean a region undercut with respect to the metal layer MTL. In particular, it may refer to a region undercut at the lower part of the first layer M1.

[0197] Referring to FIG. 12, the light-emitting layer EL can have a plurality of parts. The light-emitting layer EL can include a first part FPEL, a second part SPEL, and a third part TPEL. The first part FPEL of the light-emitting layer EL can be positioned to overlap the light-emitting region EA on a plane. As shown in the drawing, the first part FPEL, the second part SPEL, and the third part TPEL of the light-emitting layer EL can be separated from each other. It can also be said that the first part FPEL, the second part SPEL, and the third part TPEL of the light-emitting layer EL are separated from each other.

[0198] Here, the second part SPEL of the light-emitting layer EL can be positioned on the first layer M1 of the metal layer MTL. The first layer M1 of the metal layer MTL can extend further in a first direction (e.g., a side direction) than a part of an insulating film such as the first planarization layer PLN1 in order to form the undercut region UCA. For example, the first layer M1 of the metal layer MTL can extend further than a part of an insulating film such as the first planarization layer PLN1 in order to form the undercut region UCA.

[0199] The third part TPEL of the light-emitting layer EL can be arranged at a position adjacent to the undercut region UCA. For example, the third part TPEL of the light-emitting layer EL can be positioned below the second part SPEL of the light-emitting layer EL. For example, the third part TPEL of the light-emitting layer EL can cover various surfaces (e.g., side surfaces and upper surfaces) of an insulating film such as the first planarization layer PLN1. While the third part TPEL of the light-emitting layer EL is separated from the second part SPEL of the light-emitting layer EL, on a plane, the third part TPEL of the light-emitting layer EL and the second part SPEL of the light-emitting layer EL can overlap each other.

[0200] Also, the cathode electrode CE can have a plurality of portions. The cathode electrode CE can include a first portion FPCE, a second portion SPCE, and a third portion TPCE. The first portion FPCE of the cathode electrode CE can be positioned to overlap with the light-emitting region EA on a plane. As shown in the figure, the first portion FPCE, the second portion SPCE, and the third portion TPCE of the cathode electrode CE can be spaced apart from each other. Also, it can be said that the first portion FPCE, the second portion SPCE, and the third portion TPCE of the cathode electrode CE are separated from each other.

[0201] Here, the second portion SPCE of the cathode electrode CE can be positioned on the first layer M1 of the metal layer MTL. For example, the second portion SPCE of the cathode electrode CE can be positioned on the second portion SPEL of the light-emitting layer EL and can be positioned on the third layer M3 of the metal layer MTL. As shown in FIG. 12, the second portion SPCE of the cathode electrode CE may not be in direct contact with the second portion SPEL of the light-emitting layer EL.

[0202] The third portion TPCE of the cathode electrode CE can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be positioned on the third portion TPEL of the light-emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0203] FIG. 13 is a cross-sectional view of the display device 100 according to an embodiment of the present disclosure. More specifically, FIG. 13 is a cross-sectional view of the A-B portion shown in FIG. 4.

[0204] In the following description, when explaining the embodiment shown in FIG. 13, unless otherwise specified, it is the same as the display device described with reference to FIGS. 1 to 12 above.

[0205] The display device according to the embodiment shown in FIG. 13 is different from the display devices shown in FIGS. 5 to 7 in that the insulating portion is not located in the outer insulating portion region OSTA and the inner insulating portion region ISTA, and all moisture permeation prevention structures MPS are located. Also, there are differences in the structure of the moisture permeation prevention structure MPS from that of the display devices shown in FIGS. 5 to 7. For example, although the display device according to the embodiment shown in FIG. 10 shows an embodiment in which the insulating portion is not located in the outer insulating portion region OSTA and the inner insulating portion region ISTA, embodiments including one or more of the moisture permeation prevention structures MPS shown in FIG. 10 in the first non-display region NDA1 and including the insulating portion ST shown in FIGS. 5 to 7 can also be included in the embodiments of the present disclosure.

[0206] FIG. 14 is a cross-sectional view of the moisture permeation prevention structure MPS shown in FIG. 13. In the following description, when explaining the moisture permeation prevention structure MPS shown in FIG. 12, unless otherwise specified, the description is the same as that of the moisture permeation prevention structure described with reference to FIGS. 1 to 13 above.

[0207] Referring to FIG. 14, the moisture permeation prevention structure MPS can include an undercut region UCA. The undercut region UCA can be disposed on the substrate and located in an organic insulating film positioned below a plurality of light emitting elements. That the undercut region UCA is located on the organic insulating film can mean that at least one or more organic insulating films are etched to form the undercut region UCA. The organic insulating film in which the undercut region UCA is formed may be, for example, one or more of the first planarization layer PLN1 and the second planarization layer. FIG. 14 shows an embodiment in which the moisture permeation prevention structure MPS includes the first planarization layer PLN1 and the undercut region UCA is formed in the first planarization layer PLN1, but the embodiments of the present disclosure are not limited to such an embodiment. For example, embodiments of the present disclosure can include embodiments in which the moisture permeation prevention structure can include one or more of the first planarization layer PLN1 and the second planarization layer, and an undercut region is formed in one or more of the first planarization layer PLN1 and the second planarization layer.

[0208] The moisture barrier structure MPS can include at least one recess CONC in a plurality of insulating films. For example, the recess CONC can be disposed on the substrate SUB and located in the inorganic insulating film positioned below the plurality of light-emitting elements. That the recess CONC is located in the inorganic insulating film can mean that at least one or more of the inorganic insulating films are etched to form the recess CONC. The inorganic insulating film may be an inorganic insulating film located on the substrate SUB and below the light-emitting element. For example, the inorganic insulating film may be one or more of the first buffer layer BUF1 and the second interlayer insulating film ILD2 and the insulating film located between the two layers. In FIG. 14, an embodiment in which the second gate insulating film GI2 to the second interlayer insulating film ILD2 includes the recess CONC is shown, but the embodiments of the present disclosure are not limited to such embodiments.

[0209] The undercut region UCA of the organic insulating film can be located within the recess CONC. By the undercut region UCA of the organic insulating film, a part of the inorganic insulating film can be exposed. For example, the second buffer layer BUF2 is exposed by the undercut region UCA of the organic insulating film, and the light-emitting layer EL can be located on the exposed second buffer layer BUF2.

[0210] The moisture barrier structure MPS can include a metal layer MTL located on the undercut region UCA. The metal layer MTL may be, for example, the second source-drain electrode. The light-emitting layer EL can be interrupted at the side surface of the metal layer MTL.

[0211] The metal layer MTL can be composed of, for example, a triple layer. When the metal layer MTL is a triple layer, the metal layer MTL can include a first layer M1, a second layer M2 located on the first layer M1, and a third layer M3 located on the second layer M2.

[0212] The second layer M2 can have a shape sunken from the first layer M1 and the third layer M3. In other words, the second layer M2 can have a shape in which etching progresses more than the first layer M1 and the third layer M3 and is sunken from the first layer M1 and the third layer M3. Therefore, the first layer M1 and the third layer M3 can have a shape protruding from the second layer M2. Here, being sunken or protruding means being sunken or protruding in a direction parallel to the substrate SUB, and can mean protruding or sunken with reference to the undercut region UCA. By the first layer M1, the second layer M2, and the third layer M3 having the above-described shapes, the light-emitting layer EL can be effectively blocked by the moisture-proof structure MPS. In particular, the light-emitting layer EL can be blocked at least two or more times by the moisture-proof structure MPS. For example, the light-emitting layer EL can be blocked at the undercut region UCA and at the side surface of the metal layer MTL. More specifically, the light-emitting layer EL can be blocked between the first layer M1 and the second layer M2.

[0213] The second layer M2 can have a shape in which the interface with the first layer M1 protrudes more than the interface with the third layer M3. Such a shape can be formed by etching the second layer M2 more than the first layer M1 and the third layer M3.

[0214] The moisture-proof structure MPS shown in FIG. 14 can be formed as follows.

[0215] First, a plurality of insulating films may be formed on the substrate SUB. The plurality of insulating films may be one or more of the multi-buffer layer MBUF, the active buffer layer ABUF, the first gate insulating film GI1, the first interlayer insulating film ILD1, the second buffer layer BUF2, the second gate insulating film GI2, and the second interlayer insulating film ILD2. A dry etching process may be performed to form a recess CONC in the plurality of insulating films. For example, the second interlayer insulating film ILD2 and the second gate insulating film GI2 may be etched to form the recess CONC. The recess CONC can be formed by additionally etching the insulating film formed under the second gate insulating film GI2.

[0216] A planarization layer may be formed on the concave portion CONC and the second interlayer insulating film ILD2. The planarization layer may be an organic insulating film. The planarization layer can be exposed and developed using a halftone mask so that the concave portion CONC is filled with the planarization layer which is an organic insulating film. The planarization layer may be the first planarization layer PLN1 or the second planarization layer. The halftone mask can include a full-tone region and a halftone region. For example, when forming the moisture-proof structure MPS shown in FIG. 14, the planarization layer may be the first planarization layer PLN1. Further, the halftone mask can include a halftone region formed in a region corresponding to the concave portion CONC.

[0217] A metal layer MTL may be formed by patterning on the first planarization layer PLN1 and a plurality of insulating films. The metal layer MTL can be arranged in the order of the first layer M1, the second layer M2, and the third layer M3. The dry etching process may be advanced for the metal layer MTL so that a part of the exposed second layer M2 of the metal layer MTL is etched.

[0218] A second planarization layer and a bank may be respectively formed on the plurality of insulating films. The ashing process may be advanced so that the second planarization layer is formed, and the development process may be advanced so that the bank is formed.

[0219] Through the ashing process and the development process, a part of the first planarization layer PLN1 formed in the concave portion CONC may be etched to form an undercut region. For example, the first planarization layer PLN1 may be etched so that an undercut region is formed inside the lower part of the metal layer MTL and the second buffer layer BUF2 is exposed.

[0220] Through the dry etching process, the ashing (Ahing) process, the development process, etc., the metal layer MTL may have a structure in which the second layer M2 is recessed between the first layer M1 and the third layer M3, and an undercut region UCA may be formed at the lower part of the metal layer MTL in the concave portion CONC.

[0221] The light-emitting layer EL and the cathode electrode CE may be sequentially formed. In this case, the light-emitting layer EL can be disconnected at the side surface of the metal layer MTL and the undercut region UCA.

[0222] The first sealing layer PAS1 and the second sealing layer PAS2 may be formed on the light-emitting layer EL and the cathode electrode CE.

[0223] Referring to FIG. 14, the light-emitting layer EL can have a plurality of portions. The light-emitting layer EL can include a first portion FPEL, a second portion SPEL, and a third portion TPEL. The first portion FPEL of the light-emitting layer EL can be positioned to overlap with the light-emitting region EA on a plane. As shown in the drawing, the first portion FPEL, the second portion SPEL, and the third portion TPEL of the light-emitting layer EL can be spaced apart from each other. It can also be said that the first portion FPEL, the second portion SPEL, and the third portion TPEL of the light-emitting layer EL are separated from each other.

[0224] Here, the second portion SPEL of the light-emitting layer EL can be positioned on the first layer M1 of the metal layer MTL. The first layer M1 of the metal layer MTL can extend further in the first direction (for example, the side surface direction) than a part of the insulating film such as the second interlayer insulating film ILD2 and the second gate insulating film GI2 in order to form the undercut region UCA. For example, the first layer M1 of the metal layer MTL can extend further than a part of the insulating film such as the second interlayer insulating film ILD2 and the second gate insulating film GI2 in order to form the undercut region UCA.

[0225] The third portion TPEL of the light-emitting layer EL can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can be positioned below the second portion SPEL of the light-emitting layer EL. For example, the third portion TPEL of the light-emitting layer EL can be fixed in the recess CONC. Although the third portion TPEL of the light-emitting layer EL is separated from the second portion SPEL of the light-emitting layer EL, on a plane, the third portion TPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL can overlap each other.

[0226] Also, the cathode electrode CE can have a plurality of portions. The cathode electrode CE can include a first portion FPCE, a second portion SPCE, and a third portion TPCE. The first portion FPCE of the cathode electrode CE can be positioned to overlap the light-emitting region EA on a plane. As shown in the drawing, the first portion FPCE, the second portion SPCE, and the third portion TPCE of the cathode electrode CE can be spaced apart from each other. Also, it can be said that the first portion FPCE, the second portion SPCE, and the third portion TPCE of the cathode electrode CE are separated from each other.

[0227] Here, the second portion SPCE of the cathode electrode CE can be positioned on the first layer M1 of the metal layer MTL. For example, the second portion SPCE of the cathode electrode CE can be positioned on a part of the light-emitting layer EL that is spaced apart from the second portion SPEL of the light-emitting layer EL. The second portion SPCE of the cathode electrode CE can also be positioned on the third layer M3 of the metal layer MTL. As shown in FIG. 14, the second portion SPCE of the cathode electrode CE may not be in direct contact with the second portion SPEL of the light-emitting layer EL.

[0228] The third portion TPCE of the cathode electrode CE can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be positioned on the third portion TPEL of the light-emitting layer EL. Although the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, on a plane, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can overlap each other.

[0229] FIG. 15 is an exemplary cross-sectional view of the display device 100 according to an embodiment of the present disclosure. More specifically, FIG. 15 is an exemplary cross-sectional view of the A-B portion of FIG. 4. In the following description, when explaining the embodiment shown in FIG. 15, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 14 described above.

[0230] Referring to FIG. 15, the display device 100 can include a moisture permeation prevention structure MPS. The moisture permeation prevention structure MPS can be disposed in the outer isolation region OSTA. For example, the moisture permeation prevention structure MPS can be disposed between the camera hole CH and the dam structure DAM. The moisture permeation prevention structure MPS shown in FIG. 15 may be an outer moisture permeation prevention structure.

[0231] The moisture permeation prevention structure MPS can include at least one undercut region UCA among a plurality of insulating films. The moisture permeation prevention structure MPS can include an undercut region located in an inorganic insulating film positioned below a plurality of light emitting elements ED. The display device 100 shown in FIG. 15 may have the same configuration as the display device 100 shown in FIG. 5, except that an auxiliary metal layer (AML: Auxiliary Metal Layer) is disposed between the inorganic insulating films where the moisture permeation prevention structure MPS is located in the undercut region UCA.

[0232] Referring to FIG. 15, the moisture permeation prevention structure MPS can include an auxiliary metal layer AML in or below the undercut region UCA. The auxiliary metal layer AML can serve as an etching prevention layer ESL in the process of etching a metal layer when forming the moisture permeation prevention structure MPS. In the description of the present disclosure, the auxiliary metal layer AML and the etching prevention layer ESL can be used in the same meaning.

[0233] The auxiliary metal layer AML can include a metallic substance. For example, the auxiliary metal layer AML can include a single layer or multiple layers of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof, but is not limited thereto. The auxiliary metal layer AML can include the same substance as the first gate electrode GAT1, the second gate electrode GAT2, or the metal pattern TM. For example, the auxiliary metal layer AML may be composed of a Mo / Ti double layer or a single layer of Mo.

[0234] FIG. 16 is an exemplary cross-sectional view of a display device 100 according to an embodiment of the present disclosure. More specifically, FIG. 16 is an exemplary cross-sectional view of the A-B portion of FIG. 4. In the following description, when explaining the embodiment shown in FIG. 16, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 15 described above.

[0235] Referring to FIG. 16, the display device 100 can include a moisture permeation prevention structure MPS. The moisture permeation prevention structure MPS can be disposed in the inner isolation region ISTA. For example, the moisture permeation prevention structure MPS can be disposed between the display region DA and the dam structure DAM. The moisture permeation prevention structure MPS shown in FIG. 16 may be an inner moisture permeation prevention structure.

[0236] The display device 100 shown in FIG. 16 may have the same configuration as the display device 100 shown in FIG. 6, except that an auxiliary metal layer AML is disposed between inorganic insulating films where the moisture permeation prevention structure MPS is located in the undercut region UCA.

[0237] FIG. 17 is an exemplary cross-sectional view of a display device 100 according to an embodiment of the present disclosure. More specifically, FIG. 17 is an exemplary cross-sectional view of the A-B portion of FIG. 4. In the following description, when explaining the embodiment shown in FIG. 17, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 16 described above.

[0238] Referring to FIG. 17, the display device 100 can include two or more moisture permeation prevention structures MPS. The moisture permeation prevention structures MPS can be disposed in the outer isolation region OSTA and the inner isolation region ISTA. For example, the moisture permeation prevention structures MPS can be disposed between the camera hole CH and the dam structure on a plane while being disposed between the display region DA and the dam structure DAM. The moisture permeation prevention structures MPS shown in FIG. 17 may be an outer moisture permeation prevention structure and an inner moisture permeation prevention structure. The outer moisture permeation prevention structure can also be called a first moisture permeation prevention structure FMPS, and the inner moisture permeation prevention structure can also be called a second moisture permeation prevention structure SMPS.

[0239] Referring to FIG. 17, the first moisture permeation prevention structure FMPS can be disposed between the camera hole CH and the dam structure DAM on a plane. The dam structure DAM can be disposed between the first moisture permeation prevention structure FMPS and the second moisture permeation prevention structure SMPS. The second moisture permeation prevention structure SMPS can be disposed between the display area DA and the dam structure DAM on a plane.

[0240] The display device 100 shown in FIG. 17 may have the same configuration as the display device 100 shown in FIG. 7, except that an auxiliary metal layer AML is disposed between inorganic insulating films where the moisture permeation prevention structure MPS is located in the undercut region UCA.

[0241] FIG. 18 is an exemplary cross-sectional view of the moisture permeation prevention structure MPS shown in FIGS. 15 to 17. In the following description, when explaining the embodiment shown in FIG. 18, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 17 described above.

[0242] Referring to FIG. 18, the moisture permeation prevention structure MPS can include at least one undercut region UCA among a plurality of insulating films. In the embodiment shown in FIG. 18, the undercut region UCA can be formed between the first buffer layer BUF1 and the second interlayer insulating film ILD2. The light emitting layer EL can be interrupted at the undercut region UCA. Since the plurality of insulating films shown in FIG. 18 can have the same configuration as the plurality of insulating films shown in FIG. 8, repeated description is omitted.

[0243] The moisture permeation prevention structure MPS can include a metal layer MTL located on the undercut region UCA. The metal layer MTL may have, for example, the same structure as the second source-drain electrode. The light emitting layer EL can be interrupted at the side surface of the metal layer MTL. Since the metal layer MTL shown in FIG. 18 can have the same configuration as the metal layer MTL shown in FIG. 8, repeated description is omitted.

[0244] The moisture permeation prevention structure MPS can include an etching prevention layer ESL located in the undercut region UCA or below it. The etching prevention layer ESL can also be called an auxiliary metal layer AML. Referring to FIG. 18, the etching prevention layer ESL can be disposed between a plurality of insulating films located below the metal layer MTL. For example, the etching prevention layer ESL can be disposed between the second gate insulating film GI2 and the second interlayer insulating film ILD2 located below the metal layer MTL. The etching prevention layer ESL can be disposed to extend further in the first direction (e.g., the side surface direction) than a part of the insulating film forming the undercut region UCA. For example, the etching prevention layer ESL can be disposed to extend further on the second gate insulating film GI2 than a part of an insulating film such as the second interlayer insulating film ILD2.

[0245] The etching prevention layer ESL can contain a metallic substance. For example, the etching prevention layer ESL can include, but is not limited to, a single layer or a multilayer of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or an alloy thereof. For example, the etching prevention layer ESL can contain the same substance as the second gate electrode GAT2. For example, the etching prevention layer ESL may be composed of a Mo / Ti bilayer or a Mo single layer.

[0246] In the process of forming the moisture permeation prevention structure MPS, the etching prevention layer ESL can prevent a part of the insulating film disposed below from being over-etched in an etching process of patterning a metal substance such as the anode electrode AE or the metal layer MTL or patterning a plurality of insulating films. For example, in the embodiment shown in FIG. 18, a part of the second interlayer insulating film ILD2 disposed on the etching prevention layer ESL is etched, but an undercut region UCA having a structure in which the etching prevention layer ESL is not etched may be formed.

[0247] Referring to FIG. 18, the light-emitting layer EL can have a plurality of portions. As described above, the light-emitting layer EL can include a first portion FPEL, a second portion SPEL, and a third portion TPEL. The light-emitting layer EL can further include a fourth portion FRPEL. As shown in the figure, the first portion FPEL, the second portion SPEL, the third portion TPEL, and the fourth portion FRPEL of the light-emitting layer EL can be separated from each other. It can also be said that the first portion FPEL, the second portion SPEL, the third portion TPEL, and the fourth portion FRPEL of the light-emitting layer EL are separated from each other.

[0248] Here, the second portion SPEL of the light-emitting layer EL can be located on the first layer M1 of the metal layer MTL. The first layer M1 of the metal layer MTL can extend further in a first direction (e.g., the side surface direction) than a part of the insulating film in order to form an undercut region UCA. For example, the first layer M1 of the metal layer MTL can extend further than a part of an insulating film such as the second interlayer insulating film ILD2 in order to form an undercut region UCA.

[0249] The third portion TPEL of the light-emitting layer EL can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can cover the upper surface of the etching prevention layer ESL while covering the side surface SSX of the insulating film including the second interlayer insulating film ILD2. The third portion TPEL of the light-emitting layer EL can overlap with the second portion SPEL of the light-emitting layer EL in the plane while being separated from the second portion SPEL of the light-emitting layer EL. For example, in a plan view, the third portion TPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL can overlap with each other.

[0250] The fourth portion FRPEL of the light-emitting layer EL can be located on the metal layer MTL. The third layer M3 of the metal layer MTL can extend further in a first direction (e.g., the side direction) than a part of the second layer M2 of the metal layer MTL. For example, the fourth portion FRPEL of the light-emitting layer EL can be located on the extended part of the third layer M3 of the metal layer MTL. It can be said that both the fourth portion FRPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL are located on the first layer M1 of the metal layer MTL, but the fourth portion FRPEL of the light-emitting layer EL is directly located on the third layer M3 of the metal layer MTL, and the second portion SPEL of the light-emitting layer EL is directly located on the first layer M1 of the metal layer MTL.

[0251] Also, the cathode electrode CE can have a plurality of portions. As described above, the cathode electrode CE can include a first portion FPCE, a second portion SPCE, and a third portion TPCE. The cathode electrode CE can further include a fourth portion FRPCE. As shown in the figure, the first portion FPCE, the second portion SPCE, the third portion TPCE, and the fourth portion FRPCE of the cathode electrode CE can be spaced apart from each other. Also, it can be said that the first portion FPCE, the second portion SPCE, the third portion TPCE, and the fourth portion FRPCE of the cathode electrode CE are separated from each other.

[0252] Here, the second portion SPCE of the cathode electrode CE can be located on the first layer M1 of the metal layer MTL. For example, the second portion SPCE of the cathode electrode CE can be located on the second portion SPEL of the light-emitting layer EL.

[0253] The third portion TPCE of the cathode electrode CE can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE can overlap with the second portion SPCE of the cathode electrode CE in a plane while being separated from the second portion SPCE of the cathode electrode CE. For example, in a plan view, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can overlap with each other.

[0254] The fourth portion FRPCE of the cathode electrode CE can be located on the metal layer MTL. For example, the fourth portion FRPCE of the cathode electrode CE can be located on the fourth portion FRPEL of the light-emitting layer EL. Both the fourth portion FRPCE of the cathode electrode CE and the fourth portion FRPEL of the light-emitting layer EL may be separated from the second layer M2 of the metal layer MTL. It can be said that both the fourth portion FRPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE are located on the first layer M1 of the metal layer MTL. Also, the fourth portion FRPCE of the cathode electrode CE can be in direct contact with the fourth portion FRPEL of the light-emitting layer EL, and the second portion SPCE of the cathode electrode CE can be in direct contact with the second portion SPEL of the light-emitting layer EL. Such a configuration is also shown in FIGS. 19 to 23, and repeated explanations for the same configuration are omitted.

[0255] FIG. 19 is an exemplary cross-sectional view of the moisture-proof structure MPS shown in FIGS. 15 to 17. In the following description, when explaining the embodiment shown in FIG. 18, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 18 described above.

[0256] Referring to FIG. 19, the moisture permeation prevention structure MPS can include a plurality of insulating films, an undercut region UCA, a metal layer MTL, and an etching prevention layer ESL. Since the plurality of insulating films, the undercut region UCA, and the metal layer MTL shown in FIG. 19 can have the same configuration as the plurality of insulating films, the undercut region UCA, and the metal layer MTL shown in FIG. 18, repeated description thereof will be omitted.

[0257] Referring to FIG. 19, the etching prevention layer ESL can be disposed between the second gate insulating film GI2 located below the metal layer MTL and the second interlayer insulating film ILD2. The etching prevention layer ESL is disposed to extend further in a first direction (e.g., a side surface direction) than a part of the insulating film forming the undercut region UCA, and the extended portion can have a relatively thin thickness. That is, in the etching process, a part of the upper portion of the etching prevention layer ESL may be etched to form an etching prevention remaining film ESRL. The etching prevention layer ESL can include the same material as the second gate electrode GAT2. For example, the etching prevention layer ESL can be composed of a Mo / Ti double layer or a Mo single layer, and the etching prevention remaining film ESRL can be a Ti remaining film in the Mo / Ti double layer or a Mo remaining film in the Mo single layer.

[0258] The third portion TPEL of the light-emitting layer EL can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can cover the side surface SSX of the insulating film including the second interlayer insulating film ILD2 while covering the side surface of the etching prevention layer ESL and the upper surface of the etching prevention remaining film ESRL. The third portion TPEL of the light-emitting layer EL can overlap with the second portion SPEL of the light-emitting layer EL in a planar view while being separated from the second portion SPEL of the light-emitting layer EL. For example, in a plan view, the third portion TPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL can overlap with each other.

[0259] The third part TPCE of the cathode electrode CE can be arranged at a position adjacent to the undercut region UCA. For example, the third part TPCE of the cathode electrode CE can be located on the third part TPEL of the light-emitting layer EL. The third part TPCE of the cathode electrode CE can overlap with the second part SPCE of the cathode electrode CE in a plane while being separated from the second part SPCE of the cathode electrode CE. For example, in a plan view, the third part TPCE of the cathode electrode CE and the second part SPCE of the cathode electrode CE can overlap with each other.

[0260] FIG. 20 is an exemplary cross-sectional view of the moisture-proof structure MPS shown in FIGS. 15 to 17. In the following description, when explaining the embodiment shown in FIG. 20, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 19 described above.

[0261] Referring to FIG. 20, the moisture-proof structure MPS can include a plurality of insulating films, an undercut region UCA, a metal layer MTL, and an etching prevention layer ESL. Since the plurality of insulating films and the metal layer MTL shown in FIG. 20 can have the same configuration as the plurality of insulating films and the metal layer MTL shown in FIG. 18, repeated description will be omitted.

[0262] Referring to FIG. 20, the undercut region UCA can be formed in a region including an insulating film containing the active buffer layer ABUF or the second interlayer insulating film ILD2 and the etch stop layer ESL. For example, the etch stop layer ESL can be disposed between the second gate insulating film GI2 located under the metal layer MTL and the second interlayer insulating film ILD2. The etch stop layer ESL can contain the same material as the second gate electrode GAT2. For example, the etch stop layer ESL may consist of a Mo / Ti bilayer or a Mo single layer. The light-emitting layer EL can be interrupted in the undercut region UCA. Different from the etch stop layer ESL shown in FIG. 18 or FIG. 19, the etch stop layer ESL can be disposed between insulating films without extending in the first direction (e.g., the side surface direction). That is, in the etching process, the etch stop layer ESL may be over-etched and etched and removed together with the insulating film disposed under the etch stop layer ESL.

[0263] Referring to FIG. 20, the third portion TPEL of the light-emitting layer EL can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can cover the side surface of an insulating film including the second buffer layer BUF2, the first interlayer insulating film ILD1, the first gate insulating film GI1, and the first buffer layer BUF1. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, while the third portion TPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL can overlap each other in a plane.

[0264] The third portion TPCE of the cathode electrode CE can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE can be separated from the second portion SPCE of the cathode electrode CE, while the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can overlap each other in a plane.

[0265] FIG. 21 is an exemplary cross-sectional view of the moisture permeation prevention structure MPS shown in FIGS. 15 to 17. In the following description, when explaining the embodiment shown in FIG. 21, unless otherwise specified, it is the same as that described with reference to FIGS. 1 to 20 above.

[0266] Referring to FIG. 21, the moisture permeation prevention structure MPS can include at least one undercut region UCA among a plurality of insulating films. In the embodiment shown in FIG. 21, the undercut region UCA can be formed in the second gate insulating film GI2 to the second interlayer insulating film ILD2. The light emitting layer EL can be interrupted at the undercut region UCA. Since the plurality of insulating films shown in FIG. 21 can have the same configuration as the plurality of insulating films shown in FIG. 18, repeated description is omitted.

[0267] The moisture permeation prevention structure MPS shown in FIG. 21 may be different from the moisture permeation prevention structure MPS shown in FIG. 18 in terms of the shape of the undercut region UCA. The moisture permeation prevention structure MPS shown in FIG. 21 can include a step portion STP in the undercut region UCA.

[0268] The step portion STP can mean a step formed in the undercut region UCA where a part of the insulating film and the etching prevention layer ESL are not etched inside the lower part of the metal layer MTL. For example, when the second interlayer insulating film ILD2 is etched inside the lower part of the metal layer MTL, and the insulating films such as the second gate insulating film GI2, the second buffer layer BUF2, the first interlayer insulating film ILD1, and the first gate insulating film GI1 and the etching prevention layer ESL are not etched inside the lower part of the metal layer MTL, the step portion STP may be composed of the etching prevention layer ESL, the second gate insulating film GI2, the second buffer layer BUF2, the first interlayer insulating film ILD1, and the first gate insulating film GI1.

[0269] The etching prevention layer ESL can contain the same material as the second gate electrode GAT2. For example, the etching prevention layer ESL may be composed of a Mo / Ti double layer or a Mo single layer.

[0270] Referring to FIG. 21, the third portion TPEL of the light-emitting layer EL is disposed on the step portion STP, covers the side surface SSX of the second interlayer insulating film ILD2, the upper surface and the side surface of the etching prevention layer ESL, and can cover the side surfaces of the second gate insulating film GI2, the second buffer layer BUF2, and the first interlayer insulating film ILD1. Although the third portion TPEL of the light-emitting layer EL is separated from the second portion SPEL of the light-emitting layer EL, in the plane, the third portion TPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL can overlap each other.

[0271] The third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. Although the third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, in the plane, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can overlap each other.

[0272] FIG. 22 is an exemplary cross-sectional view of the moisture barrier structure MPS shown in FIGS. 15 to 17. In the following description, when explaining the embodiment shown in FIG. 22, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 21 described above.

[0273] Referring to FIG. 22, the moisture barrier structure MPS can include a plurality of insulating films, an undercut region UCA, a metal layer MTL, a step portion STP, and an etching prevention layer ESL. Since the plurality of insulating films, the undercut region UCA, and the metal layer MTL shown in FIG. 22 can have the same configuration as the plurality of insulating films, the undercut region UCA, and the metal layer MTL shown in FIG. 21, repeated description will be omitted.

[0274] Referring to FIG. 22, the etching prevention layer ESL is arranged to extend further in a first direction (for example, the side surface direction) than a part of the insulating film that forms the undercut region UCA on the step portion STP, and the extended portion can have a relatively small thickness. That is, in the etching process, a part of the upper portion of the etching prevention layer ESL may be etched to form the etching prevention remaining film ESRL. The etching prevention layer ESL can contain the same material as the second gate electrode GAT2. For example, the etching prevention layer ESL can be composed of a Mo / Ti double layer or a Mo single layer, and the etching prevention remaining film ESRL can be a Ti remaining film in the Mo / Ti double layer or a Mo remaining film in the Mo single layer.

[0275] Referring to FIG. 22, the third portion TPEL of the light-emitting layer EL is arranged on the step portion STP, covers the side surface SSX of the second interlayer insulating film ILD2 and the side surface SSY of the etching prevention layer ESL, and can cover the upper surface and the side surface of the etching prevention remaining film ESRL. The third portion TPEL of the light-emitting layer EL is separated from the second portion SPEL of the light-emitting layer EL, but in the plane, the third portion TPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL can overlap each other.

[0276] The third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, but in the plane, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can overlap each other.

[0277] FIG. 23 is an exemplary cross-sectional view of the moisture permeation prevention structure MPS shown in FIGS. 15 to 17. In the following description, when explaining the embodiment shown in FIG. 23, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 22 described above.

[0278] Referring to FIG. 23, the moisture permeation prevention structure MPS can include a plurality of insulating films, an undercut region UCA, a metal layer MTL, a step portion STP, and an etching prevention layer ESL. Since the plurality of insulating films, the undercut region UCA, and the metal layer MTL shown in FIG. 23 can have the same configuration as the plurality of insulating films and the metal layer MTL shown in FIG. 21, repeated description will be omitted.

[0279] Referring to FIG. 23, the undercut region UCA can be formed in a region including an insulating film containing the second gate insulating film GI2 and the second interlayer insulating film ILD2 and the etching prevention layer ESL. For example, the etching prevention layer ESL can be disposed between the second gate insulating film GI2 and the second interlayer insulating film ILD2 located below the metal layer MTL. The etching prevention layer ESL can contain the same material as the second gate electrode GAT2. For example, the etching prevention layer ESL may be composed of a Mo / Ti double layer or a Mo single layer. The light emitting layer EL can be interrupted in the undercut region UCA. Different from the etching prevention layer ESL shown in FIG. 21 or FIG. 22, the etching prevention layer ESL can be disposed between the insulating films without extending in the first direction (for example, the side surface direction) on the step portion STP. That is, in the etching process, the etching prevention layer ESL may be over-etched, and a part of the etching prevention layer ESL may be etched and removed.

[0280] Referring to FIG. 23, the third portion TPEL of the light emitting layer EL is disposed on the step portion STP, can cover the side surface SSX of the second interlayer insulating film ILD2 and the side surface SSY of the etching prevention layer ESL, and can cover the upper surface UPZ and the side surface SSZ of the second gate insulating film GI2. Although the third portion TPEL of the light emitting layer EL is separated from the second portion SPEL of the light emitting layer EL, on a plane, the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL can overlap each other.

[0281] The third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. While the third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other in a plane.

[0282] FIG. 24 is an exemplary cross-sectional view of the moisture barrier structure MPS shown in FIGS. 15 to 17. In the following description, when explaining the embodiment shown in FIG. 24, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 23 described above.

[0283] Referring to FIG. 24, the moisture barrier structure MPS can include at least one undercut region UCA among a plurality of insulating films. In the embodiment shown in FIG. 24, the undercut region UCA can be formed between the first buffer layer BUF1 and the second interlayer insulating film ILD2. The light-emitting layer EL can be interrupted at the undercut region UCA. Since the plurality of insulating films shown in FIG. 24 can have the same configuration as the plurality of insulating films shown in FIG. 18, repeated description is omitted.

[0284] The moisture barrier structure MPS can include a metal layer MTL located on the undercut region UCA. The metal layer MTL can have, for example, the same structure as the second source-drain electrode. The light-emitting layer EL can be interrupted at the side surface of the metal layer MTL. Since the metal layer MTL shown in FIG. 18 can have the same configuration as the metal layer MTL shown in FIG. 18, repeated description is omitted.

[0285] The moisture permeation prevention structure MPS can include an etching prevention layer ESL located in the undercut region UCA or below it. The etching prevention layer ESL can also be called an auxiliary metal layer AML. Referring to FIG. 24, the etching prevention layer ESL can be disposed between a plurality of insulating films located below the metal layer MTL. For example, the etching prevention layer ESL can be disposed between the first interlayer insulating film ILD1 and the second buffer layer BUF2 located below the metal layer MTL. The etching prevention layer ESL can be disposed to extend further in the first direction (e.g., the side surface direction) than a part of the insulating film forming the undercut region UCA. For example, on the first interlayer insulating film ILD1, the etching prevention layer ESL can be disposed to extend further than a part of insulating films such as the second buffer layer BUF2, the second gate insulating film GI2, and the second interlayer insulating film ILD2.

[0286] The etching prevention layer ESL can contain a metallic substance. For example, the etching prevention layer ESL can include, but is not limited to, a single layer or multiple layers of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof. For example, the etching prevention layer ESL can contain the same substance as the metal pattern TM. For example, the etching prevention layer ESL may consist of a Mo / Ti double layer or a Mo single layer.

[0287] The etching prevention layer ESL can prevent some of the insulating films disposed below from being over-etched in an etching process of patterning a metal substance such as the anode electrode AE or the metal layer MTL or patterning a plurality of insulating films in the process of forming the moisture permeation prevention structure MPS. For example, in the embodiment shown in FIG. 24, a part of the second buffer layer BUF2, the second gate insulating film GI2, and the second interlayer insulating film ILD2 disposed on the etching prevention layer ESL is etched, but an undercut region UCA having a structure in which the etching prevention layer ESL is not etched can be formed.

[0288] Referring to FIG. 24, the light-emitting layer EL can have a plurality of portions. As described above, the light-emitting layer EL can include a first portion FPEL, a second portion SPEL, and a third portion TPEL. The light-emitting layer EL can further include a fourth portion FRPEL. As shown in the drawing, the first portion FPEL, the second portion SPEL, the third portion TPEL, and the fourth portion FRPEL of the light-emitting layer EL can be spaced apart from each other. It can also be said that the first portion FPEL, the second portion SPEL, the third portion TPEL, and the fourth portion FRPEL of the light-emitting layer EL are separated from each other.

[0289] Here, the second portion SPEL of the light-emitting layer EL can be located on the first layer M1 of the metal layer MTL. The first layer M1 of the metal layer MTL can extend in a first direction (e.g., a side direction) more than a part of the insulating film in order to form an undercut region UCA. For example, the first layer M1 of the metal layer MTL can extend further than a part of the insulating film such as the second buffer layer BUF2, the second gate insulating film GI2, and the second interlayer insulating film ILD2 in order to form the undercut region UCA.

[0290] The third portion TPEL of the light-emitting layer EL can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can cover the upper surface of the etching prevention layer ESL while covering the side surface of the insulating film including the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2. The third portion TPEL of the light-emitting layer EL can overlap with the second portion SPEL of the light-emitting layer EL in a plane while being separated from the second portion SPEL of the light-emitting layer EL.

[0291] The fourth part FRPEL of the light-emitting layer EL can be located on the metal layer MTL. The third layer M3 of the metal layer MTL can extend in a first direction (e.g., the side direction) more than a part of the second layer M2 of the metal layer MTL. For example, the fourth part FRPEL of the light-emitting layer EL can be located on an extended part of the third layer M3 of the metal layer MTL. It can be said that both the fourth part FRPEL of the light-emitting layer EL and the second part SPEL of the light-emitting layer EL are located on the first layer M1 of the metal layer MTL, but the fourth part FRPEL of the light-emitting layer EL is directly located on the third layer M3 of the metal layer MTL, and the second part SPEL of the light-emitting layer EL is directly located on the first layer M1 of the metal layer MTL.

[0292] Also, the cathode electrode CE can have a plurality of parts. As described above, the cathode electrode CE can include a first part FPCE, a second part SPCE, and a third part TPCE. The cathode electrode CE can further include a fourth part FRPCE. As shown in the figure, the first part FPCE, the second part SPCE, the third part TPCE, and the fourth part FRPCE of the cathode electrode CE can be separated from each other. Also, it can be said that the first part FPCE, the second part SPCE, the third part TPCE, and the fourth part FRPCE of the cathode electrode CE are separated from each other.

[0293] Here, the second part SPCE of the cathode electrode CE can be located on the first layer M1 of the metal layer MTL. For example, the second part SPCE of the cathode electrode CE can be located on the second part SPEL of the light-emitting layer EL.

[0294] The third part TPCE of the cathode electrode CE can be arranged at a position adjacent to the undercut region UCA. For example, the third part TPCE of the cathode electrode CE can be located on the third part TPEL of the light-emitting layer EL. The third part TPCE of the cathode electrode CE can overlap with the second part SPCE of the cathode electrode CE in the plane while being separated from the second part SPCE of the cathode electrode CE.

[0295] The fourth part FRPCE of the cathode electrode CE can be located on the metal layer MTL. For example, the fourth part FRPCE of the cathode electrode CE can be located on the fourth part FRPEL of the light-emitting layer EL. The fourth part FRPCE of the cathode electrode CE and the fourth part FRPEL of the light-emitting layer EL may both be separated from the second layer M2 of the metal layer MTL. It can be said that both the fourth part FRPCE of the cathode electrode CE and the second part SPCE of the cathode electrode CE are located on the first layer M1 of the metal layer MTL. Also, the fourth part FRPCE of the cathode electrode CE can be in direct contact with the fourth part FRPEL of the light-emitting layer EL, and the second part SPCE of the cathode electrode CE can be in direct contact with the second part SPEL of the light-emitting layer EL. Such a configuration is also shown in FIGS. 25 to 29, and repeated explanations for the same configuration are omitted.

[0296] FIG. 25 is an exemplary cross-sectional view of the moisture barrier structure MPS shown in FIGS. 15 to 17. In the following description, when explaining the embodiment shown in FIG. 25, unless otherwise specified, it is the same as that described with reference to FIGS. 1 to 24 above.

[0297] Referring to FIG. 25, the moisture barrier structure MPS can include a plurality of insulating films, an undercut region UCA, a metal layer MTL, and an etching prevention layer ESL. Since the plurality of insulating films, the undercut region UCA, and the metal layer MTL shown in FIG. 25 can have the same configuration as the plurality of insulating films, the undercut region UCA, and the metal layer MTL shown in FIG. 24, repeated explanations are omitted.

[0298] Referring to FIG. 25, the anti-etching layer ESL can be disposed between the first interlayer insulating film ILD1 located below the metal layer MTL and the second buffer layer BUF2. The anti-etching layer ESL extends further in the first direction (e.g., the side direction) than a part of the insulating film forming the undercut region UCA, but the extended portion can have a relatively thin thickness. That is, in the etching process, even if a part of the upper portion of the anti-etching layer ESL is etched to form the anti-etching remaining film ESRL, the extended portion can be formed. The anti-etching layer ESL can contain the same material as the metal pattern TM. For example, the anti-etching layer ESL may be composed of a Mo / Ti double layer or a Mo single layer, and the anti-etching remaining film ESRL may be a Ti remaining film in the Mo / Ti double layer or a Mo remaining film in the Mo single layer.

[0299] The third portion TPEL of the light-emitting layer EL can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can cover the side surface of the insulating film including the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2, and cover the side surface of the anti-etching layer ESL and the upper surface of the anti-etching remaining film ESRL. The third portion TPEL of the light-emitting layer EL can overlap with the second portion SPEL of the light-emitting layer EL in the plane while being separated from the second portion SPEL of the light-emitting layer EL.

[0300] The third portion TPCE of the cathode electrode CE can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE can overlap with the second portion SPCE of the cathode electrode CE in the plane while being separated from the second portion SPCE of the cathode electrode CE.

[0301] FIG. 26 is an exemplary cross-sectional view of the moisture permeation prevention structure MPS shown in FIGS. 15 to 17. In the following description, when explaining the embodiment shown in FIG. 20, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 25 described above.

[0302] Referring to FIG. 26, the moisture permeation prevention structure MPS can include a plurality of insulating films, an undercut region UCA, a metal layer MTL, and an etching prevention layer ESL. The plurality of insulating films and the metal layer MTL shown in FIG. 26 can have the same configuration as the plurality of insulating films and the metal layer MTL shown in FIG. 24, and thus repeated description will be omitted.

[0303] Referring to FIG. 26, the undercut region UCA can be formed in a region including an insulating film containing the active buffer layer ABUF to the second interlayer insulating film ILD2 and the etching prevention layer ESL. For example, the etching prevention layer ESL can be disposed between the first interlayer insulating film ILD1 located below the metal layer MTL and the second buffer layer BUF2. The etching prevention layer ESL can contain the same material as the metal pattern TM. For example, the etching prevention layer ESL may be composed of a Mo / Ti double layer or a Mo single layer. The light emitting layer EL can be interrupted in the undercut region UCA. Different from the etching prevention layer ESL shown in FIG. 24 or FIG. 25, the etching prevention layer ESL can be disposed between the insulating films without extending in the first direction (for example, the side surface direction). That is, in the etching process, the etching prevention layer ESL may be over-etched and etched and removed together with the insulating film disposed below the etching prevention layer ESL.

[0304] Referring to FIG. 26, the third portion TPEL of the light-emitting layer EL can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can cover the side surfaces of the second buffer layer BUF2 and the etching prevention layer ESL, and the side surfaces of the insulating film including the first interlayer insulating film ILD1, the first gate insulating film GI1, and the first buffer layer BUF1 and the upper surface of the first buffer layer BUF1. The third portion TPEL of the light-emitting layer EL can overlap with the second portion SPEL of the light-emitting layer EL in the plane while being separated from the second portion SPEL of the light-emitting layer EL.

[0305] The third portion TPCE of the cathode electrode CE can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE can overlap with the second portion SPCE of the cathode electrode CE in the plane while being separated from the second portion SPCE of the cathode electrode CE.

[0306] FIG. 27 is an exemplary cross-sectional view of the moisture barrier structure MPS shown in FIGS. 15 to 17. In the following description, when explaining the embodiment shown in FIG. 27, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 26 described above.

[0307] Referring to FIG. 27, the moisture barrier structure MPS can include at least one undercut region UCA among a plurality of insulating films. In the embodiment shown in FIG. 27, the undercut region UCA can be formed in the first interlayer insulating film ILD1 or the second interlayer insulating film ILD2. The light-emitting layer EL can be interrupted by the undercut region UCA. Since the plurality of insulating films shown in FIG. 27 can have the same configuration as the plurality of insulating films shown in FIG. 24, repeated description is omitted.

[0308] The moisture barrier structure MPS shown in FIG. 27 may be different from the moisture barrier structure MPS shown in FIG. 24 in terms of the shape of the undercut region UCA. The moisture barrier structure MPS shown in FIG. 27 may include a step portion STP in the undercut region UCA.

[0309] The step portion STP can mean a step formed in the undercut region UCA where a part of the insulating film and the etch stop layer ESL are not etched inside the lower part of the metal layer MTL. For example, when the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2 are etched inside the lower part of the metal layer MTL, and the insulating film and the etch stop layer ESL such as the first interlayer insulating film ILD1 and the first gate insulating film GI1 are not etched inside the lower part of the metal layer MTL, the step portion STP can be composed of the etch stop layer ESL, the first interlayer insulating film ILD1, and the first gate insulating film GI1.

[0310] The etch stop layer ESL can contain the same material as the metal pattern TM. For example, the etch stop layer ESL may be composed of a Mo / Ti bilayer or a Mo single layer.

[0311] Referring to FIG. 27, the third portion TPEL of the light-emitting layer EL is disposed on the step portion STP, covers the side surfaces of the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2, and can cover the upper surface and the side surface of the etch stop layer ESL. The third portion TPEL of the light-emitting layer EL can overlap with the second portion SPEL of the light-emitting layer EL in the plane while being separated from the second portion SPEL of the light-emitting layer EL.

[0312] The third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE can overlap with the second portion SPCE of the cathode electrode CE in the plane while being separated from the second portion SPCE of the cathode electrode CE.

[0313] FIG. 28 is an exemplary cross-sectional view of the moisture permeation prevention structure MPS shown in FIGS. 15 to 17. In the following description, when explaining the embodiment shown in FIG. 28, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 27 described above.

[0314] Referring to FIG. 28, the moisture permeation prevention structure MPS can include a plurality of insulating films, an undercut region UCA, a metal layer MTL, a step portion STP, and an etching prevention layer ESL. Since the plurality of insulating films, the undercut region UCA, and the metal layer MTL shown in FIG. 28 can have the same configuration as the plurality of insulating films, the undercut region UCA, and the metal layer MTL shown in FIG. 24, repeated description will be omitted.

[0315] Referring to FIG. 28, the etching prevention layer ESL is arranged to extend further in the first direction (for example, the side surface direction) than a part of the insulating film that forms the undercut region UCA on the step portion STP, but the extended portion can have a relatively thin thickness. That is, in the etching process, even if a part of the upper portion of the etching prevention layer ESL is etched to form an etching prevention remaining film ESRL, the extended portion than a part of the insulating film may be formed. The etching prevention layer ESL can contain the same substance as the metal pattern TM. For example, the etching prevention layer ESL may be composed of a Mo / Ti double layer or a Mo single layer, and the etching prevention remaining film ESRL may be a Ti remaining film in the Mo / Ti double layer or a Mo remaining film in the Mo single layer.

[0316] Referring to FIG. 28, the third portion TPEL of the light emitting layer EL is arranged on the step portion STP, covers the side surface SS1 of the second interlayer insulating film ILD2, the side surface SS2 of the second gate insulating film GI2, the side surface SS3 of the second buffer layer BUF2, and the side surface SS4 of the etching prevention layer ESL, and can cover the upper surface USS and the side surface SSS of the etching prevention remaining film ESRL. The third portion TPEL of the light emitting layer EL is separated from the second portion SPEL of the light emitting layer EL, but in the plane, the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL can overlap each other.

[0317] Although FIG. 28 does not explicitly show a configuration in which the third portion TPEL of the light-emitting layer EL is disposed on the step portion STP while covering the side surface SS1 of the second interlayer insulating film ILD2, in other embodiments, the third portion TPEL of the light-emitting layer EL can cover the side surface SS1 of the second interlayer insulating film ILD2.

[0318] The third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE can overlap with the second portion SPCE of the cathode electrode CE in a plane while being separated from the second portion SPCE of the cathode electrode CE.

[0319] FIG. 29 is an exemplary cross-sectional view of the moisture barrier structure MPS shown in FIGS. 15 to 17. In the following description, when explaining the embodiment shown in FIG. 29, unless otherwise specified, the description is the same as that described with reference to FIGS. 1 to 28 above.

[0320] Referring to FIG. 29, the moisture barrier structure MPS can include a plurality of insulating films, an undercut region UCA, a metal layer MTL, a step portion STP, and an etching prevention layer ESL. Since the plurality of insulating films, the undercut region UCA, and the metal layer MTL shown in FIG. 29 can have the same configuration as the plurality of insulating films and the metal layer MTL shown in FIG. 24, repeated description will be omitted.

[0321] Referring to FIG. 29, the undercut region UCA can be formed in a region including an insulating film containing the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2 and a region including the etch stop layer ESL. For example, the etch stop layer ESL can be disposed between the first interlayer insulating film ILD1 located under the metal layer MTL and the second buffer layer BUF2. The etch stop layer ESL can contain the same material as the metal pattern TM. For example, the etch stop layer ESL may be composed of a Mo / Ti bilayer or a Mo single layer. The light-emitting layer EL can be interrupted in the undercut region UCA. Different from the etch stop layer ESL shown in FIG. 27 or FIG. 28, the etch stop layer ESL is not arranged to extend in the first direction (for example, the side surface direction) on the step portion STP, but can be arranged between the insulating films. That is, in the etching process, the etch stop layer ESL may be over-etched, and a part of the etch stop layer ESL may be etched and removed.

[0322] Referring to FIG. 29, the third portion TPEL of the light-emitting layer EL is disposed on the step portion STP, and can cover the side surfaces of the second interlayer insulating film ILD2, the second gate insulating film GI2, the second buffer layer BUF2, and the etch stop layer ESL, and can cover the upper surface and the side surface of the first interlayer insulating film ILD1. Although FIG. 29 does not explicitly show a configuration in which the third portion TPEL of the light-emitting layer EL covers the side surface SS1 of the second interlayer insulating film ILD2 while being disposed on the step portion STP, in other embodiments, the third portion TPEL of the light-emitting layer EL can cover the side surface SS1 of the second interlayer insulating film ILD2.

[0323] Although FIG. 29 does not explicitly show a configuration in which the third portion TPEL of the light-emitting layer EL covers the side surface SS1 of the second interlayer insulating film ILD2 while being disposed on the step portion STP, in other embodiments, the third portion TPEL of the light-emitting layer EL can cover the side surface SS1 of the second interlayer insulating film ILD2.

[0324] The third part TPCE of the cathode electrode CE can be located on the third part TPEL of the light-emitting layer EL. The third part TPCE of the cathode electrode CE can overlap with the second part SPCE of the cathode electrode CE in the plane while being separated from the second part SPCE of the cathode electrode CE.

[0325] FIG. 30 is an exemplary cross-sectional view of a display device 100 according to an embodiment of the present disclosure. In the following description, when explaining the embodiment shown in FIG. 30, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 29 described above.

[0326] The display device 100 according to the embodiment shown in FIG. 30 is different from the display devices shown in FIGS. 15 to 17 in that the moisture permeation prevention structure MPS is located in all areas without the location of the insulation part in the outer insulation part area OSTA and the inner insulation part area ISTA. Also, there are differences in the structure of the moisture permeation prevention structure MPS from the display devices shown in FIGS. 15 to 17.

[0327] Referring to FIG. 30, the display device 100 can include a moisture permeation prevention structure MPS. The moisture permeation prevention structure MPS can be arranged in the outer insulation part area OSTA and the inner insulation part area ISTA. For example, the moisture permeation prevention structure MPS can be arranged between the display area DA and the dam structure DAM while being arranged between the camera hole CH and the dam structure in the plane.

[0328] The moisture permeation prevention structure MPS can include at least one undercut area UCA among a plurality of insulating films. The moisture permeation prevention structure MPS can include an undercut area located in the insulating film located below a plurality of light-emitting elements ED. The display device 100 shown in FIG. 30 may have the same configuration as the display device 100 shown in FIG. 13 except that an auxiliary metal layer (AML: Auxiliary Metal Layer) is arranged between the insulating films where the moisture permeation prevention structure MPS is located in the undercut area UCA.

[0329] Referring to FIG. 30, the moisture permeation prevention structure MPS can include an auxiliary metal layer AML in the undercut region UCA or below it. The auxiliary metal layer AML can serve as an etching prevention layer ESL in the process of etching the metal layer when forming the moisture permeation prevention structure MPS. In the description of the present disclosure, the auxiliary metal layer AML and the etching prevention layer ESL can be used in the same meaning.

[0330] The auxiliary metal layer AML can include a metallic substance. For example, the auxiliary metal layer AML can include, but is not limited to, a single layer or multiple layers of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof. The auxiliary metal layer AML can include the same substance as the first gate electrode GAT1, the second gate electrode GAT2, or the metal pattern TM. For example, the auxiliary metal layer AML may be composed of a Mo / Ti bilayer or a single layer of Mo.

[0331] FIG. 31 is an exemplary cross-sectional view of the moisture permeation prevention structure MPS shown in FIG. 30. In the following description, when explaining the embodiment shown in FIG. 31, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 30 described above.

[0332] Referring to FIG. 31, the moisture permeation prevention structure MPS can include an undercut region UCA. The undercut region UCA can be disposed on the substrate SUB and located in the organic insulating film positioned below the plurality of light emitting elements. The fact that the undercut region UCA is located on the organic insulating film can mean that at least one or more of the organic insulating films are etched to form the undercut region UCA. The organic insulating film in which the undercut region UCA is formed can be, for example, one or more of the first planarization layer PLN1 and the second planarization layer PLN2. FIG. 31 shows an embodiment in which the moisture permeation prevention structure MPS includes the first planarization layer PLN1 and the undercut region UCA is formed in the first planarization layer PLN1, but the embodiments of the present disclosure are not limited to such an embodiment. For example, in the embodiments of the present disclosure, the moisture permeation prevention structure MPS can include one or more of the first planarization layer PLN1 and the second planarization layer PLN2, and the embodiments can include those in which the undercut region UCA is formed in one or more of the first planarization layer PLN1 and the second planarization layer PLN2.

[0333] The moisture permeation prevention structure MPS can include at least one recess CONC among the plurality of insulating films. For example, the recess CONC can be disposed on the substrate SUB and located in the inorganic insulating film positioned below the plurality of light emitting elements. The fact that the recess CONC is located on the inorganic insulating film can mean that at least one or more of the inorganic insulating films are etched to form the recess CONC. The inorganic insulating film can be an inorganic insulating film located on the substrate SUB and below the light emitting elements. For example, the inorganic insulating film can be one or more of the first buffer layer BUF1 and the second interlayer insulating film ILD2 and the insulating film located between the two layers. FIG. 31 shows an embodiment in which the second interlayer insulating film ILD2 includes the recess CONC, but the embodiments of the present disclosure are not limited to such an embodiment.

[0334] The undercut region UCA of the organic insulating film can be located within the recess CONC. A part of the etching prevention layer ESL disposed on the inorganic insulating film may be exposed by the undercut region UCA of the organic insulating film. For example, due to the undercut region UCA of the organic insulating film, the etching prevention layer ESL is exposed, and the light-emitting layer EL can be located on the exposed etching prevention layer ESL.

[0335] The moisture permeation prevention structure MPS can include a metal layer MTL located on the undercut region UCA. The metal layer MTL may have, for example, the same structure as the second source-drain electrode. The light-emitting layer EL can be interrupted at the side surface of the metal layer MTL. Since the metal layer MTL shown in FIG. 31 can have the same structure as the metal layer MTL shown in FIG. 14, repeated description will be omitted.

[0336] The moisture permeation prevention structure MPS can include the etching prevention layer ESL located on or below the undercut region UCA. The etching prevention layer ESL may be an auxiliary metal layer AML. Referring to FIG. 31, the etching prevention layer ESL can be disposed between a plurality of insulating films located below the metal layer MTL. The etching prevention layer ESL can be fixedly disposed within the recess CONC. For example, a part of the etching prevention layer ESL can be disposed between the second gate insulating film GI2 and the second interlayer insulating film ILD2 located below the metal layer MTL and extend so as to be fixed in the recess CONC. The organic insulating film can be disposed on a part of the etching prevention layer ESL disposed within the recess CONC. For example, due to the undercut region UCA of the organic insulating film, the etching prevention layer ESL is exposed, and the light-emitting layer EL can be located on the exposed etching prevention layer ESL.

[0337] The etching prevention layer ESL can contain metallic substances. For example, the etching prevention layer ESL can include, but is not limited to, a single layer or multiple layers of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof. The etching prevention layer ESL can contain the same substance as the second gate electrode GAT2. For example, the etching prevention layer ESL may consist of a double layer of Mo / Ti or a single layer of Mo.

[0338] During the process of forming the moisture prevention structure MPS, the etching prevention layer ESL can prevent some of the insulating films disposed below from being over-etched in an etching process of patterning a metallic substance such as the anode electrode AE or the metal layer MTL, or patterning a plurality of insulating films to form the recess CONC. For example, in the embodiment shown in FIG. 31, a part of the second interlayer insulating film ILD2 disposed on the etching prevention layer ESL is etched, but an undercut region UCA having a structure in which the etching prevention layer ESL is not etched may be formed.

[0339] Referring to FIG. 31, the light-emitting layer EL can have a plurality of parts. The light-emitting layer EL can include a first part FPEL, a second part SPEL, and a third part TPEL. The first part FPEL of the light-emitting layer EL can be positioned to overlap with the light-emitting region EA on a plane. As shown in the drawing, the first part FPEL, the second part SPEL, and the third part TPEL of the light-emitting layer EL can be separated from each other. It can also be said that the first part FPEL, the second part SPEL, and the third part TPEL of the light-emitting layer EL are separated from each other.

[0340] Here, the second part SPEL of the light-emitting layer EL can be located on the first layer M1 of the metal layer MTL. The first layer M1 of the metal layer MTL can extend in a first direction (e.g., the side direction) more than a part of an insulating film such as the second interlayer insulating film ILD2 to form an undercut region UCA. For example, the first layer M1 of the metal layer MTL can extend even more than a part of an insulating film such as the second interlayer insulating film ILD2 to form an undercut region UCA.

[0341] The third part TPEL of the light-emitting layer EL can be arranged at a position adjacent to the undercut region UCA. For example, the third part TPEL of the light-emitting layer EL can be located below the second part SPEL of the light-emitting layer EL. For example, the third part TPEL of the light-emitting layer EL can be fixed in the recess CONC. The third part TPEL of the light-emitting layer EL can be arranged on an etching prevention layer ESL arranged in the recess CONC. The third part TPEL of the light-emitting layer EL can overlap with the second part SPEL of the light-emitting layer EL in the plane while being separated from the second part SPEL of the light-emitting layer EL.

[0342] Also, the cathode electrode CE can have a plurality of parts. The cathode electrode CE can include a first part FPCE, a second part SPCE, and a third part TPCE. The cathode electrode CE can be positioned such that the first part FPCE overlaps with the light-emitting region EA in the plane. As shown in the figure, the first part FPCE, the second part SPCE, and the third part TPCE of the cathode electrode CE can be separated from each other. Also, it can be said that the first part FPCE, the second part SPCE, and the third part TPCE of the cathode electrode CE are separated from each other.

[0343] Here, the second portion SPCE of the cathode electrode CE can be located on the first layer M1 of the metal layer MTL. For example, the second portion SPCE of the cathode electrode CE can be located on a portion of the light-emitting layer EL that is spaced apart from the second portion SPEL of the light-emitting layer EL. The second portion SPCE of the cathode electrode CE can also be located on the third layer M3 of the metal layer MTL. As shown in FIG. 31, the second portion SPCE of the cathode electrode CE does not have to be in direct contact with the second portion SPEL of the light-emitting layer EL.

[0344] The third portion TPCE of the cathode electrode CE can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE can overlap with the second portion SPCE of the cathode electrode CE in the plane while being spaced apart from the second portion SPCE of the cathode electrode CE.

[0345] FIG. 32 is an exemplary cross-sectional view of the moisture barrier structure MPS shown in FIG. 30. In the following description, when explaining the embodiment shown in FIG. 32, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 31 described above.

[0346] Referring to FIG. 32, the moisture barrier structure MPS can include a plurality of insulating films, an undercut region UCA, a metal layer MTL, a concave portion CONC, and an etching prevention layer ESL. Since the plurality of insulating films, the undercut region UCA, the metal layer MTL, and the concave portion CONC shown in FIG. 32 can have the same configuration as the plurality of insulating films, the undercut region UCA, the metal layer MTL, and the concave portion CONC shown in FIG. 31, repeated description will be omitted.

[0347] Referring to FIG. 32, the anti-etching layer ESL can be disposed between a plurality of insulating films located below the metal layer MTL. The anti-etching layer ESL can be fixedly disposed within the recess CONC. For example, a part of the anti-etching layer ESL can be disposed between the second gate insulating film GI2 and the second interlayer insulating film ILD2 located below the metal layer MTL, and can be extended and disposed so as to be fixed to the recess CONC. The portion where the anti-etching layer ESL extends so as to be fixed to the recess CONC can have a relatively thin thickness. That is, a part of the anti-etching layer ESL fixed to the recess CONC may have a part of the upper portion of the anti-etching layer ESL etched in the etching process to form an anti-etching residual film ESRL. At this time, the anti-etching residual film ESRL may be a Ti residual film in the Mo / Ti double layer or a Mo residual film in the Mo single layer. The organic insulating film can be disposed on a part of the anti-etching residual film ESRL disposed within the recess CONC. For example, the anti-etching residual film ESRL may be exposed by the undercut region UCA of the organic insulating film, and the light-emitting layer EL may be located on the exposed anti-etching residual film ESRL.

[0348] Referring to FIG. 32, the third portion TPEL of the light-emitting layer EL can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can be located below the second portion SPEL of the light-emitting layer EL. For example, the third portion TPEL of the light-emitting layer EL can be fixed to the recess CONC. The third portion TPEL of the light-emitting layer EL can be disposed on the anti-etching residual film ESRL disposed within the recess CONC. Although the third portion TPEL of the light-emitting layer EL is separated from the second portion SPEL of the light-emitting layer EL, the third portion TPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL can overlap each other on a plane.

[0349] The third portion TPCE of the cathode electrode CE can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE can overlap with the second portion SPCE of the cathode electrode CE in a plane while being separated from the second portion SPCE of the cathode electrode CE.

[0350] FIG. 33 is an exemplary cross-sectional view of the moisture-proof structure MPS shown in FIG. 30. In the following description, when explaining the embodiment shown in FIG. 33, unless otherwise specified, it is the same as that described with reference to FIGS. 1 to 32 above.

[0351] Referring to FIG. 33, the moisture-proof structure MPS can include a plurality of insulating films, an undercut region UCA, a metal layer MTL, a concave portion CONC, and an etching prevention layer ESL. Since the plurality of insulating films, the undercut region UCA, the metal layer MTL, and the concave portion CONC shown in FIG. 33 can have the same configuration as the plurality of insulating films, the undercut region UCA, the metal layer MTL, and the concave portion CONC shown in FIG. 31, repeated description will be omitted.

[0352] Referring to FIG. 33, the anti-etching layer ESL can be disposed between a plurality of insulating films located below the metal layer MTL. For example, a part of the anti-etching layer ESL can be disposed between the second gate insulating film GI2 and the second interlayer insulating film ILD2 located below the metal layer MTL. Different from the anti-etching layer ESL shown in FIG. 31 or FIG. 32, the anti-etching layer ESL does not adhere to the recess CONC and can be disposed between the insulating films. For example, in the etching process, the anti-etching layer ESL may be over-etched and a part of the anti-etching layer ESL may be etched and removed. That is, the anti-etching layer ESL may not be disposed in the recess CONC. The organic insulating film can be disposed on a part of the second gate insulating film GI2 disposed in the recess CONC. For example, the second gate insulating film GI2 may be exposed by the undercut region UCA of the organic insulating film, and the light-emitting layer EL may be located on the exposed second gate insulating film GI2.

[0353] Referring to FIG. 33, the third part TPEL of the light-emitting layer EL can be disposed at a position adjacent to the undercut region UCA. For example, the third part TPEL of the light-emitting layer EL can be located below the second part SPEL of the light-emitting layer EL. For example, the third part TPEL of the light-emitting layer EL can be fixed in the recess CONC. The third part TPEL of the light-emitting layer EL can be disposed on the second buffer layer BUF2 disposed in the recess CONC. Although the third part TPEL of the light-emitting layer EL is separated from the second part SPEL of the light-emitting layer EL, the third part TPEL of the light-emitting layer EL and the second part SPEL of the light-emitting layer EL can overlap each other in the plane.

[0354] The third part TPCE of the cathode electrode CE can be disposed at a position adjacent to the undercut region UCA. For example, the third part TPCE of the cathode electrode CE can be located on the third part TPEL of the light-emitting layer EL. Although the third part TPCE of the cathode electrode CE is separated from the second part SPCE of the cathode electrode CE, the third part TPCE of the cathode electrode CE and the second part SPCE of the cathode electrode CE can overlap each other in the plane.

[0355] FIG. 34 is an exemplary cross-sectional view of the moisture barrier structure MPS shown in FIG. 30. In the following description, when explaining the embodiment shown in FIG. 34, unless otherwise specified, it is the same as that described with reference to FIGS. 1 to 33 above.

[0356] Referring to FIG. 34, the moisture barrier structure MPS can include a plurality of insulating films, an undercut region UCA, a metal layer MTL, a recess CONC, and an etching prevention layer ESL. Since the plurality of insulating films, the undercut region UCA, and the metal layer MTL shown in FIG. 34 can have the same configuration as the plurality of insulating films, the undercut region UCA, and the metal layer MTL shown in FIG. 34, repeated description will be omitted.

[0357] The moisture barrier structure MPS can include at least one recess CONC among the plurality of insulating films. For example, the recess CONC can be disposed on the substrate SUB and located in the inorganic insulating film below the plurality of light-emitting elements. The fact that the recess CONC is located on the inorganic insulating film can mean that at least one or more of the inorganic insulating films are etched to form the recess CONC. The inorganic insulating film can be an inorganic insulating film located on the substrate SUB and below the light-emitting element. For example, the inorganic insulating film can be one or more of the first buffer layer BUF1 and the second interlayer insulating film ILD2 and the insulating film located between the two layers. FIG. 34 shows an embodiment in which the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2 include the recess CONC, but the embodiments of the present disclosure are not limited to such embodiments.

[0358] The moisture permeation prevention structure MPS can include an etching prevention layer ESL located in or below the undercut region UCA. The etching prevention layer ESL may be an auxiliary metal layer AML. Referring to FIG. 34, the etching prevention layer ESL can be disposed between a plurality of insulating films located below the metal layer MTL. The etching prevention layer ESL can be fixedly disposed within the recess CONC. For example, a part of the etching prevention layer ESL can be disposed between the first interlayer insulating film ILD1 and the second buffer layer BUF2 located below the metal layer MTL and can be extended and disposed so as to be fixed to the recess CONC. The organic insulating film can be disposed on a part of the etching prevention layer ESL disposed within the recess CONC. For example, the etching prevention layer ESL may be exposed by the undercut region UCA of the organic insulating film, and the light-emitting layer EL may be located on the exposed etching prevention layer ESL.

[0359] The etching prevention layer ESL can contain a metallic substance. For example, the etching prevention layer ESL can include, but is not limited to, a single layer or a multilayer of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or an alloy thereof. The etching prevention layer ESL can contain the same substance as the metal pattern TM. For example, the etching prevention layer ESL may consist of a double layer of Mo / Ti or a single layer of Mo.

[0360] In the process of forming the moisture permeation prevention structure MPS, the etching prevention layer ESL can prevent some of the insulating films disposed below from being over-etched in the etching process of patterning a metal substance such as the anode electrode AE or the metal layer MTL or patterning a plurality of insulating films to form the recess CONC. For example, in the embodiment shown in FIG. 34, a part of the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2 disposed on the etching prevention layer ESL is etched, but an undercut region UCA having a structure in which the etching prevention layer ESL is not etched can be formed.

[0361] Referring to FIG. 34, the light-emitting layer EL can have a plurality of portions. The light-emitting layer EL can include a first portion FPEL, a second portion SPEL, and a third portion TPEL. The first portion FPEL of the light-emitting layer EL can be positioned to overlap the light-emitting region EA on a plane. As shown in the drawing, the first portion FPEL, the second portion SPEL, and the third portion TPEL of the light-emitting layer EL can be spaced apart from each other. It can be said that the first portion FPEL, the second portion SPEL, and the third portion TPEL of the light-emitting layer EL are separated from each other.

[0362] Here, the second portion SPEL of the light-emitting layer EL can be positioned on the first layer M1 of the metal layer MTL. The first layer M1 of the metal layer MTL can extend further in a first direction (e.g., a side direction) than a part of an insulating film such as the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2 in order to form an undercut region UCA. For example, the first layer M1 of the metal layer MTL can extend further than a part of an insulating film such as the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2 in order to form an undercut region UCA.

[0363] The third portion TPEL of the light-emitting layer EL can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can be positioned below the second portion SPEL of the light-emitting layer EL. For example, the third portion TPEL of the light-emitting layer EL can be fixed in the recess CONC. The third portion TPEL of the light-emitting layer EL can be disposed on an etching prevention layer ESL disposed in the recess CONC. The third portion TPEL of the light-emitting layer EL can overlap with the second portion SPEL of the light-emitting layer EL on a plane while being separated from the second portion SPEL of the light-emitting layer EL.

[0364] Also, the cathode electrode CE can have a plurality of parts. The cathode electrode CE can include a first part FPCE, a second part SPCE, and a third part TPCE. The cathode electrode CE can be positioned such that the first part FPCE overlaps the light-emitting region EA on a plane. As shown in the figure, the first part FPCE, the second part SPCE, and the third part TPCE of the cathode electrode CE can be spaced apart from each other. Also, it can be said that the first part FPCE, the second part SPCE, and the third part TPCE of the cathode electrode CE are separated from each other.

[0365] Here, the second part SPCE of the cathode electrode CE can be positioned on the first layer M1 of the metal layer MTL. For example, the second part SPCE of the cathode electrode CE can be positioned on a part of the light-emitting layer EL that is spaced apart from the second part SPEL of the light-emitting layer EL. The second part SPCE of the cathode electrode CE can also be positioned on the third layer M3 of the metal layer MTL. As shown in FIG. 34, the second part SPCE of the cathode electrode CE does not have to be in direct contact with the second part SPEL of the light-emitting layer EL.

[0366] The third part TPCE of the cathode electrode CE can be arranged at a position adjacent to the undercut region UCA. For example, the third part TPCE of the cathode electrode CE can be positioned on the third part TPEL of the light-emitting layer EL. The third part TPCE of the cathode electrode CE can overlap with the second part SPCE of the cathode electrode CE on a plane while being spaced apart from the second part SPCE of the cathode electrode CE.

[0367] FIG. 35 is an exemplary cross-sectional view of the moisture-proof structure MPS shown in FIG. 30. In the following description, when explaining the embodiment shown in FIG. 35, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 34 described above.

[0368] Referring to FIG. 35, the moisture permeation prevention structure MPS can include a plurality of insulating films, an undercut region UCA, a metal layer MTL, a concave portion CONC, and an etching prevention layer ESL. Since the plurality of insulating films, the undercut region UCA, the metal layer MTL, and the concave portion CONC shown in FIG. 35 can have the same configuration as the plurality of insulating films, the undercut region UCA, the metal layer MTL, and the concave portion CONC shown in FIG. 34, repeated description will be omitted.

[0369] Referring to FIG. 35, the etching prevention layer ESL can be disposed between a plurality of insulating films located below the metal layer MTL. The etching prevention layer ESL can be fixedly disposed within the concave portion CONC. For example, a part of the etching prevention layer ESL can be disposed between the first interlayer insulating film ILD1 and the second buffer layer BUF2 located below the metal layer MTL, and can be extended and disposed so as to be fixed to the concave portion CONC. The portion where the etching prevention layer ESL extends so as to be fixed to the concave portion CONC can have a relatively thin thickness. That is, in the etching process, a part of the upper portion of the etching prevention layer ESL can be etched, and an etching prevention remaining film ESRL can be formed in the portion of the etching prevention layer ESL fixed to the concave portion CONC. At this time, the etching prevention remaining film ESRL can be a Ti remaining film in the Mo / Ti double layer or a Mo remaining film in the Mo single layer. The organic insulating film can be disposed on a part of the etching prevention remaining film ESRL disposed within the concave portion CONC. For example, the etching prevention remaining film ESRL can be exposed by the undercut region UCA of the organic insulating film, and the light emitting layer EL can be located on the exposed etching prevention remaining film ESRL.

[0370] Referring to FIG. 35, the third portion TPEL of the light-emitting layer EL can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can be located below the second portion SPEL of the light-emitting layer EL. For example, the third portion TPEL of the light-emitting layer EL can be fixed to the recess CONC. The third portion TPEL of the light-emitting layer EL can be disposed on the etching prevention remaining film ESRL disposed in the recess CONC. The third portion TPEL of the light-emitting layer EL can overlap with the second portion SPEL of the light-emitting layer EL in a plane while being separated from the second portion SPEL of the light-emitting layer EL.

[0371] The third portion TPCE of the cathode electrode CE can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE can overlap with the second portion SPCE of the cathode electrode CE in a plane while being separated from the second portion SPCE of the cathode electrode CE.

[0372] FIG. 36 is an exemplary cross-sectional view of the moisture barrier structure MPS shown in FIG. 30. In the following description, when explaining the embodiment shown in FIG. 36, unless otherwise specified, it is the same as the description with reference to FIGS. 1 to 35 described above.

[0373] Referring to FIG. 36, the moisture barrier structure MPS can include a plurality of insulating films, an undercut region UCA, a metal layer MTL, a recess CONC, and an etching prevention layer ESL. Since the plurality of insulating films, the undercut region UCA, the metal layer MTL, and the recess CONC shown in FIG. 36 can have the same configuration as the plurality of insulating films, the undercut region UCA, the metal layer MTL, and the recess CONC shown in FIG. 34, the repeated description will be omitted.

[0374] Referring to FIG. 36, the anti-etching layer ESL can be disposed between a plurality of insulating films located below the metal layer MTL. For example, a part of the anti-etching layer ESL may be disposed between the first interlayer insulating film ILD1 and the second buffer layer BUF2 located below the metal layer MTL. Different from the anti-etching layer ESL shown in FIG. 34 or FIG. 35, the anti-etching layer ESL does not adhere to the recess CONC and can be disposed between the insulating films. For example, in the etching process, the anti-etching layer ESL may be over-etched and a part of the anti-etching layer ESL may be etched and removed. That is, the anti-etching layer ESL may not be disposed in the recess CONC. An organic insulating film may be disposed on a part of the first interlayer insulating film ILD1 disposed in the recess CONC. For example, the first interlayer insulating film ILD1 may be exposed by the undercut region UCA of the organic insulating film, and the light-emitting layer EL may be located on the exposed first interlayer insulating film ILD1.

[0375] Referring to FIG. 36, the third portion TPEL of the light-emitting layer EL can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can be located below the second portion SPEL of the light-emitting layer EL. For example, the third portion TPEL of the light-emitting layer EL can adhere to the recess CONC. The third portion TPEL of the light-emitting layer EL can be disposed on the second buffer layer BUF2 disposed in the recess CONC. Although the third portion TPEL of the light-emitting layer EL is separated from the second portion SPEL of the light-emitting layer EL, on a plane, the third portion TPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL can overlap each other.

[0376] The third portion TPCE of the cathode electrode CE can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. Although the third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, on a plane, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can overlap each other.

[0377] When the display device includes such a moisture permeation prevention structure MPS, the light emitting layer EL may be interrupted two or more times by the moisture permeation prevention structure MPS. Therefore, it is possible to effectively prevent external moisture from penetrating through the camera hole and causing defects.

[0378] Briefly describing the embodiments of the present disclosure described above, they are as follows.

[0379] An embodiment of the present disclosure provides a display device including a substrate including a display area where a plurality of light emitting elements including a light emitting layer are located, a camera hole located within the display area, and a first non-display area located between the display area and the camera hole, a dam located in the first non-display area, a plurality of insulating films disposed on the substrate and located below the plurality of light emitting elements, and a moisture permeation prevention structure disposed in the first non-display area and including an undercut area of at least one of the plurality of insulating films.

[0380] In the display device according to an embodiment of the present disclosure, the light emitting layer extends from the display area to the boundary of the camera hole and is located, and the light emitting layer can be interrupted at the undercut area.

[0381] In the display device according to an embodiment of the present disclosure, it may include a disconnection part located in the first non-display area.

[0382] In the display device according to an embodiment of the present disclosure, the disconnection part may include an inner disconnection part located between the display area and the dam and an outer disconnection part located between the dam and the camera hole.

[0383] In the display device according to an embodiment of the present disclosure, the moisture permeation prevention structure may include an inner moisture permeation prevention structure located between the display area and the dam.

[0384] In the display device according to an embodiment of the present disclosure, the moisture permeation prevention structure may include an outer moisture permeation prevention structure located between the dam and the camera hole.

[0385] In the display device according to an embodiment of the present disclosure, the light-emitting layer extends from the display region to the boundary of the camera hole and is located, and the moisture-proof structure includes a metal layer located on the undercut region, and the light-emitting layer can be interrupted on the side surface of the metal layer.

[0386] In the display device according to an embodiment of the present disclosure, the metal layer includes a first layer, a second layer located on the first layer, and a third layer located on the second layer, and the second layer can have a shape sunken from the first layer and the third layer.

[0387] In the display device according to an embodiment of the present disclosure, the metal layer includes a first layer, a second layer located on the first layer, and a third layer located on the second layer, and the first layer can have a shape protruding from the third layer.

[0388] In the display device according to an embodiment of the present disclosure, the metal layer includes a first layer, a second layer located on the first layer, and a third layer located on the second layer, the first layer and the third layer are the same substance as each other, and the second layer may be a substance different from the first layer and the third layer.

[0389] In the display device according to an embodiment of the present disclosure, the moisture-proof structure is located in the undercut region and can include a stepped portion located below the metal layer.

[0390] In the display device according to an embodiment of the present disclosure, the undercut region is disposed on the substrate and can be located in an inorganic insulating film located below a plurality of light-emitting elements.

[0391] In the display device according to an embodiment of the present disclosure, the undercut region is disposed on the substrate and can be located in an organic insulating film located below a plurality of light-emitting elements.

[0392] In the display device according to an embodiment of the present disclosure, the moisture-proof structure includes at least one recess of a plurality of insulating films, and the undercut region can be located in the recess.

[0393] In the display device according to an embodiment of the present disclosure, the moisture permeation prevention structure includes at least one recess of a plurality of insulating films, and the undercut region can be located on the substrate and in the organic insulating film located below a plurality of light emitting elements.

[0394] In the display device according to an embodiment of the present disclosure, the moisture permeation prevention structure includes at least one recess of a plurality of insulating films, and the recess can be located on the substrate and in the inorganic insulating film located below a plurality of light emitting elements.

[0395] In the display device according to an embodiment of the present disclosure, the moisture permeation prevention structure includes a metal layer located on the undercut region, and may further include an auxiliary metal layer disposed below the metal layer at a distance from the metal layer.

[0396] In the display device according to an embodiment of the present disclosure, the moisture permeation prevention structure includes at least one recess of a plurality of insulating films, and may further include an auxiliary metal layer disposed below the recess.

[0397] Embodiments of the present disclosure include a display area, a non-display area adjacent to the display area, a camera hole spaced apart from the display area on a plane and disposed adjacent to the non-display area, a light emitting element disposed to overlap the display area on the plane, a dam structure disposed in the non-display area, and a plurality of metal layers, and can provide a display device including a moisture permeation prevention structure disposed adjacent to the dam structure.

[0398] In an embodiment of the present disclosure, the moisture permeation prevention structure can include an undercut region adjacent to a plurality of metal layers.

[0399] In an embodiment of the present disclosure, the display device can further include a plurality of insulating layers below a plurality of metal layers.

[0400] In an embodiment of the present disclosure, the plurality of metal layers can include a first metal layer and a second metal layer.

[0401] In an embodiment of the present disclosure, the plurality of insulating layers may include a first insulating layer.

[0402] In an embodiment of the present disclosure, the first metal layer may extend in a first direction further than a part of the first insulating layer to form an undercut.

[0403] In an embodiment of the present disclosure, the light-emitting element may include a light-emitting layer and a first electrode on the light-emitting layer.

[0404] In an embodiment of the present disclosure, the light-emitting layer may include a first part, a second part, and a third part. The first part, the second part, and the third part may be spaced apart from each other.

[0405] In an embodiment of the present disclosure, the first part of the light-emitting layer may overlap with the light-emitting region on a plane, and the second part of the light-emitting layer may be on the first metal layer.

[0406] In an embodiment of the present disclosure, the third part of the light-emitting layer may be disposed under the undercut region.

[0407] In an embodiment of the present disclosure, the third part of the light-emitting layer and the second part of the light-emitting layer may overlap with each other on a plane, and the first part of the light-emitting layer may not overlap with the second part and the third part of the light-emitting layer on a plane.

[0408] In an embodiment of the present disclosure, the light-emitting element may include a light-emitting layer and a first electrode on the light-emitting layer. The first electrode may include a first part, a second part, and a third part.

[0409] In an embodiment of the present disclosure, the first part, the second part, and the third part of the first electrode may be spaced apart from each other. The first part of the first electrode layer may overlap with the light-emitting region on a plane, and the second part of the first electrode may be on the first metal layer.

[0410] In an embodiment of the present disclosure, the light-emitting element may include a light-emitting layer and a first electrode on the light-emitting layer.

[0411] In an embodiment of the present disclosure, the first electrode includes a first portion, a second portion, and a third portion, and the first portion, the second portion, and the third portion of the first electrode may be spaced apart from each other.

[0412] In an embodiment of the present disclosure, the first portion of the first electrode layer can overlap with the light-emitting region on a plane, and the third portion of the first electrode can be disposed under the undercut region.

[0413] In an embodiment of the present disclosure, the third portion and the second portion of the light-emitting layer can overlap with each other on a plane, and the first portion of the light-emitting layer may not overlap with the second portion and the third portion of the light-emitting layer on a plane.

[0414] In an embodiment of the present disclosure, the moisture barrier structure can be disposed between the dam structure and the camera hole on a plane.

[0415] In an embodiment of the present disclosure, the dam structure can be disposed between the moisture barrier structure and the camera hole on a plane.

[0416] In an embodiment of the present disclosure, the moisture barrier structure can include a first moisture barrier structure and a second moisture barrier structure. The first moisture barrier structure can be disposed between the dam structure and the camera hole on a plane, and the dam structure can be disposed between the first moisture barrier structure and the second moisture barrier structure on a plane.

[0417] In the display device according to an embodiment of the present disclosure, an auxiliary metal layer disposed under a plurality of metal layers of the first moisture barrier structure can be further included.

[0418] In the display device according to an embodiment of the present disclosure, a second moisture barrier structure disposed adjacent to the first moisture barrier structure, and an auxiliary metal layer disposed between the first moisture barrier structure and the second moisture barrier structure can be further included.

[0419] In the display device according to an embodiment of the present disclosure, on a plane, the auxiliary metal layer can be disposed overlapping the first moisture barrier structure and the second moisture barrier structure.

[0420] In the display device according to an embodiment of the present disclosure, it can further include a second moisture barrier structure disposed adjacent to and spaced apart from the first moisture barrier structure on a plane, and a second auxiliary metal layer disposed spaced apart from the first auxiliary metal layer and the first auxiliary metal layer. On a plane, the first auxiliary metal layer can be disposed overlapping the first moisture barrier structure, and the second auxiliary metal layer can be disposed overlapping the second moisture barrier structure.

[0421] In the display device according to an embodiment of the present disclosure, it can further include at least one insulating layer disposed between the plurality of metal layers and the auxiliary metal layer. On a plane, the auxiliary metal layer can be disposed in contact with and overlapping at least one insulating layer.

[0422] In the display device according to an embodiment of the present disclosure, it can further include a thin film transistor including a gate electrode and electrically connected to the light emitting element. The auxiliary metal layer and the gate electrode can include the same material.

[0423] In the display device according to an embodiment of the present disclosure, it can further include a thin film transistor including an active layer and electrically connected to the light emitting element, and a metal pattern disposed spaced apart below the active layer. The auxiliary metal layer and the metal pattern can include the same material.

[0424] The above description merely exemplarily explains the technical idea of the present disclosure. Those with ordinary knowledge in the technical field to which the present disclosure pertains can make various modifications and deformations without departing from the essential characteristics of the present disclosure. Also, the embodiments disclosed in the present disclosure are for the purpose of explaining rather than limiting the technical idea of the present disclosure, so the scope of the technical idea of the present disclosure is not limited by such embodiments.

Claims

1. a substrate including a display area in which a plurality of light-emitting elements each including a light-emitting layer are located, a camera hole located within the display area, and a first non-display area located between the display area and the camera hole; A dam located in the first non-display area; A plurality of insulating films disposed on the substrate and positioned below the plurality of light emitting elements; and a moisture permeation prevention structure disposed in the first non-display region and including an undercut region of at least one of the insulating films.

2. The light emitting layer is located extending from the display area to a boundary of the camera hole, The display device of claim 1 , wherein the light-emitting layer is discontinued in the undercut region.

3. a discontinuity portion located in the first non-display region; The discontinuity portion is an inner discontinuity located between the display area and the dam; and The display device of claim 1 including an outer discontinuity located between the dam and the camera hole.

4. The display device according to claim 1 , wherein the moisture permeation prevention structure includes an inner moisture permeation prevention structure located between the display area and the dam.

5. The display device according to claim 1 , wherein the moisture permeation prevention structure includes an outer moisture permeation prevention structure located between the dam and the camera hole.

6. The light emitting layer is located extending from the display area to a boundary of the camera hole, the moisture barrier structure includes a metal layer located on the undercut area; The display device according to claim 1 , wherein the light-emitting layer is interrupted at a side surface of the metal layer.

7. the metal layer includes a first layer, a second layer located on the first layer, and a third layer located on the second layer; The display device according to claim 6 , wherein the second layer has a shape recessed from the first layer and the third layer, or the first layer has a shape protruding from the third layer.

8. the metal layer includes a first layer, a second layer located on the first layer, and a third layer located on the second layer; The display device of claim 6 , wherein the first layer and the third layer are made of the same material, and the second layer is made of a different material than the first layer and the third layer.

9. The display device according to claim 6 , wherein the moisture permeation prevention structure includes a step portion located in the undercut region and below the metal layer.

10. the undercut region is located in an insulating film disposed on the substrate and located under the plurality of light emitting elements; The display device according to claim 1 , wherein the insulating film is either an inorganic insulating film or an organic insulating film.

11. The moisture permeation prevention structure includes a recess in at least one of the insulating films, The display device of claim 1 , wherein the undercut region is located within the recess.

12. The moisture permeation prevention structure includes a recess in at least one of the insulating films, the undercut region is located in an insulating film disposed on the substrate and located under the plurality of light emitting elements; The display device according to claim 1 , wherein the insulating film is either an inorganic insulating film or an organic insulating film.

13. Further comprising an auxiliary metal layer; The moisture permeation prevention structure includes a recess in at least one of the insulating films, The display device according to claim 1 , wherein the auxiliary metal layer is disposed under the recess.

14. a display area and a non-display area adjacent to the display area; a camera hole spaced apart from the display area and adjacent to the non-display area on a plane; a light-emitting element arranged so as to overlap the display area on a plane; A dam structure disposed in the non-display area; and A display device comprising: a first moisture permeation prevention structure including a plurality of metal layers and adjacent to the dam structure.

15. The display device of claim 14 , further comprising an auxiliary metal layer disposed under the plurality of metal layers of the first moisture permeation prevention structure.

16. a second moisture-permeation prevention structure adjacent to the first moisture-permeation prevention structure; and The display device of claim 14 , further comprising an auxiliary metal layer disposed between the first moisture permeation prevention structure and the second moisture permeation prevention structure.

17. The display device according to claim 16 , wherein the auxiliary metal layer overlaps both the first moisture permeation prevention structure and the second moisture permeation prevention structure on a plane.

18. a second moisture permeation prevention structure adjacent to and spaced apart from the first moisture permeation prevention structure on a plane; and a first auxiliary metal layer and a second auxiliary metal layer spaced apart from the first auxiliary metal layer, The display device of claim 14 , wherein the first auxiliary metal layer overlaps the first moisture permeation prevention structure and the second auxiliary metal layer overlaps the second moisture permeation prevention structure on a plane.

19. At least one insulating film is disposed between the plurality of metal layers and the auxiliary metal layer; The display device according to claim 15 , wherein the auxiliary metal layer is in contact with and overlaps the at least one insulating film on a plane.

20. a thin film transistor electrically connected to the light emitting element and including a gate electrode; 20. The display device according to claim 19, wherein the auxiliary metal layer and the gate electrode are made of the same material.

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