Vapor deposition mask, framed vapor deposition mask, method of manufacturing vapor deposition mask, method of manufacturing organic device, and method of manufacturing framed vapor deposition mask

Abstract

To provide a vapor deposition mask that can improve definition.SOLUTION: A vapor deposition mask 10 according to the present disclosure includes a mask substrate 15 that contains silicon, a mask layer 20 that includes a first surface 20a and a second surface 20b that is located opposite the first surface and that faces the mask substrate, a through-hole 40 that extends through the mask layer. The mask substrate includes a substrate opening 16. The through-hole is located in the substrate opening in a plan view. The mask layer includes a mask body layer 21 that forms the first surface and a mask intermediate layer 22 that is located between the mask body layer and the mask substrate. The mask body layer contains a metal material.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a vapor deposition mask, a vapor deposition mask with a frame, a method for manufacturing a vapor deposition mask, a method for manufacturing an organic device, and a vapor deposition mask with a frame.

Background Art

[0002] Display devices used in portable devices such as smartphones and tablets are preferably high-definition, for example, the pixel density is preferably 400 ppi or more. Also, in portable devices, the demand for supporting ultra-high definition (UHD) is increasing. In this case, the pixel density of the display device is preferably, for example, 800 ppi or more.

[0003] Among display devices, an organic EL display device, which is an example of an organic device, has attracted attention due to its good responsiveness, low power consumption, and high contrast. As a method for forming pixels of an organic EL display device, a method of forming pixels in a desired pattern using a vapor deposition mask in which through holes are formed in a desired pattern is known. Specifically, first, a vapor deposition mask is combined with a vapor deposition substrate for an organic EL display device. Subsequently, a vapor deposition material containing an organic material is vapor-deposited on the vapor deposition substrate by passing through the through holes of the vapor deposition mask. As a result, a vapor deposition layer containing the vapor deposition material (or a light-emitting layer of the organic EL display device) can be formed on the vapor deposition substrate as pixels in the same pattern as the through holes of the vapor deposition mask (see, for example, Patent Documents 1 to 3).

[0004] As an example of such a method for manufacturing a vapor deposition mask, a method of forming through holes in a metal plate by an etching process using photolithography technology is known.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0006] The present disclosure aims to provide an evaporation mask capable of improving fineness, an evaporation mask with a frame, a method for manufacturing an evaporation mask, a method for manufacturing an organic device, and a method for manufacturing an evaporation mask with a frame.

Means for Solving the Problems

[0007] The evaporation mask according to the present disclosure includes a mask substrate containing silicon, a mask layer having a first surface and a second surface located on the side opposite to the first surface and facing the mask substrate, and a through hole penetrating the mask layer. The mask substrate has a substrate opening. In a plan view, the through hole is located within the substrate opening. The mask layer has a mask body layer forming the first surface and a mask intermediate layer located between the mask body layer and the mask substrate. The mask body layer contains a metal material.

[0008] The evaporation mask with a frame according to the present disclosure includes the above-described evaporation mask and a frame that supports the mask substrate of the evaporation mask.

[0009] The method for manufacturing an evaporation mask according to the present disclosure includes a substrate preparation step of preparing a mask substrate containing silicon, a mask layer formation step, a substrate opening formation step, and a through-hole formation step. In the mask layer formation step, a mask layer having a first surface and a second surface located on the side opposite to the first surface and facing the mask substrate is formed on the mask substrate. In the substrate opening formation step, a substrate opening is formed in the mask substrate. In the through-hole formation step, a through-hole penetrating the mask layer is formed. In a plan view, the through-hole is located within the substrate opening. The mask layer formation step includes a mask intermediate layer formation step of forming a mask intermediate layer on the surface of the mask substrate facing the mask layer, and a mask main body layer formation step of forming a mask main body layer on the surface of the mask intermediate layer opposite to the mask substrate and forming a through-hole penetrating the mask main body layer. The mask main body layer contains a metal material.

[0010] The method for manufacturing an evaporation mask according to the present disclosure includes a substrate preparation step of preparing a mask substrate containing silicon, a mask layer formation step, a substrate opening formation step, and a mask layer opening formation step. In the mask layer formation step, a mask layer having a first surface and a second surface located on the side opposite to the first surface and facing the mask substrate is formed on the mask substrate. In the substrate opening formation step, a substrate opening is formed in the mask substrate. In the mask layer opening formation step, a mask layer opening is formed in the mask layer along the substrate opening in a plan view. The mask layer formation step includes a mask intermediate layer formation step of forming a mask intermediate layer on the surface of the mask substrate facing the mask layer, and a mask main body layer formation step of forming a mask main body layer on the surface of the mask intermediate layer opposite to the mask substrate and forming a through-hole penetrating the mask main body layer. In the mask layer opening formation step, the mask layer opening is formed in the mask intermediate layer. In a plan view, the through-hole is located within the substrate opening. The mask main body layer contains a metal material.

[0011] The method for manufacturing an organic EL device according to the present disclosure includes a vapor deposition mask preparation step of preparing a vapor deposition mask by the above-described method for manufacturing a vapor deposition mask, an adhesion step, and a vapor deposition step. In the adhesion step, the first surface of the metal layer of the vapor deposition mask is adhered to the vapor deposition substrate. In the vapor deposition step, a vapor deposition layer is formed by vapor-depositing a vapor deposition material on the vapor deposition substrate through the through holes of the vapor deposition mask.

[0012] The method for manufacturing a vapor deposition mask with a frame according to the present disclosure includes a vapor deposition mask preparation step of preparing a vapor deposition mask by the above-described method for manufacturing a vapor deposition mask, and a frame attachment step of attaching a frame to the mask substrate of the vapor deposition mask.

Advantages of the Invention

[0013] According to the present disclosure, the fineness can be improved.

Brief Description of the Drawings

[0014]

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Mode for Carrying Out the Invention

[0015] In this specification and the drawings, unless otherwise specified, terms that mean a substance that forms the basis of a certain configuration, such as "substrate", "base material", "plate", "sheet", "film", etc., are not distinguished from each other based only on the difference in name.

[0016] In this specification and the drawings, unless otherwise specified, terms that specify the shape, geometric conditions, and their degrees, such as terms like "parallel" and "orthogonal", and values of length and angle, etc., are not bound by their strict meaning and shall be interpreted to include a range where similar functions can be expected.

[0017] In this specification and the drawings, unless otherwise specified, when a certain configuration, such as a certain member or a certain region, is "above", "below", "on the upper side", "on the lower side", or "above", "below" another member or another configuration, etc., it includes the case where a certain configuration is in direct contact with another configuration. Furthermore, it also includes the case where another configuration is included between a certain configuration and another configuration, that is, the case of indirect contact. Also, unless otherwise specified, the terms "above", "upper side", "above", or "below", "lower side", "below" may have the vertical direction reversed.

[0018] In this specification and the drawings, unless otherwise specified, the state where the surface of element A "faces" the surface of element B includes not only the case where the surface of element A is in contact with the surface of element B, but also the case where element C is located between the surface of element A and the surface of element B. That is, the term "faces" is a term representing the orientation of two surfaces.

[0019] In this specification and the accompanying drawings, unless otherwise specified, the same or similar parts having the same function are denoted by the same reference numerals or similar reference numerals, and repeated descriptions thereof may be omitted. Also, the dimensional ratios in the drawings may be different from the actual ratios for convenience of explanation, or a part of the configuration may be omitted from the drawings.

[0020] In this specification and the accompanying drawings, unless otherwise specified, they can be combined with other embodiments or modifications within a non - conflicting range. Also, other embodiments can be combined with each other, other embodiments can be combined with modifications, and modifications can be combined with each other within a non - conflicting range.

[0021] In this specification and the accompanying drawings, unless otherwise specified, when disclosing a plurality of steps regarding a method such as a manufacturing method, other steps not disclosed may be implemented between the disclosed steps. Also, the order of the disclosed steps is arbitrary within a non - conflicting range.

[0022] In this specification and the accompanying drawings, unless otherwise specified, a numerical range expressed by the symbol "~" includes the numerical values placed before and after the symbol "~". For example, the numerical range defined by the expression "34~38 mass%" is the same as the numerical range defined by the expression "34 mass% or more and 38 mass% or less".

[0023] In this specification and the accompanying drawings, unless otherwise specified, in one embodiment of this specification, an example regarding a vapor deposition mask used for patterning an organic material in a desired pattern on a substrate when manufacturing an organic device and a method for manufacturing the same will be described. However, the present embodiment is not limited to such applications and can be applied to vapor deposition masks used in various applications.

[0024] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the drawings. The following embodiments are examples of the embodiments of the present disclosure, and the present disclosure is not construed as being limited only to these embodiments.

[0025] The first aspect of the present disclosure is a mask substrate containing silicon, a mask layer having a first surface and a second surface located on the side opposite to the first surface and facing the mask substrate, and a through hole penetrating the mask layer. The mask substrate has a substrate opening, and in a plan view, the through hole is located within the substrate opening. The mask layer has a mask main body layer forming the first surface and a mask intermediate layer located between the mask main body layer and the mask substrate. The mask main body layer is a vapor deposition mask containing a metal material. That is.

[0026] As a second aspect of the present disclosure, in the vapor deposition mask according to the first aspect described above, the thickness of the mask intermediate layer may be smaller than the thickness of the mask main body layer. That is.

[0027] As a third aspect of the present disclosure, in the vapor deposition mask according to the first aspect or the second aspect described above, the mask intermediate layer includes a substrate-side layer containing gold, aluminum, chromium, nickel, titanium, titanium nitride, an aluminum alloy containing neodymium, silicon oxide, or silicon dioxide, and the substrate-side layer is in contact with the mask main body layer and is also in contact with the mask substrate. That is.

[0028] As a fourth aspect of the present disclosure, in the vapor deposition mask according to the first aspect or the second aspect described above, the mask intermediate layer includes a main body-side layer facing the mask main body layer and a substrate-side layer facing the mask substrate. The body-side layer and the substrate-side layer are made of different metal materials. This may be the case.

[0029] As a fifth aspect of the present disclosure, in the vapor deposition mask according to the fourth aspect described above, the substrate-side layer contains gold, aluminum, chromium, nickel, titanium, titanium nitride, an aluminum alloy containing neodymium, silicon oxide, or silicon dioxide. This may be the case.

[0030] As a sixth aspect of the present disclosure, in the vapor deposition mask according to the fourth aspect or the fifth aspect described above, the body-side layer contains titanium, copper, nickel, or gold. This may be the case.

[0031] As a seventh aspect of the present disclosure, in the vapor deposition mask according to each of the fourth aspect to the sixth aspect described above, the mask intermediate layer includes an intermediate layer located between the substrate-side layer and the body-side layer. The intermediate layer is made of a metal material different from the body-side layer and the substrate-side layer. This may be the case.

[0032] As an eighth aspect of the present disclosure, in the vapor deposition mask according to the seventh aspect described above, the intermediate layer contains titanium, titanium nitride, aluminum, an aluminum alloy containing neodymium, silicon oxide, silicon dioxide, nickel, copper, chromium, or gold. This may be the case.

[0033] As a ninth aspect of the present disclosure, in the vapor deposition mask according to each of the first aspect to the eighth aspect described above, the metal material of the mask body layer is a magnetic metal material. This may be the case.

[0034] As a tenth aspect of the present disclosure, in the vapor deposition mask according to each of the first to ninth aspects described above, the mask substrate has a substrate body that defines the substrate opening, the mask intermediate layer includes a main body region portion located between the mask main body layer and the substrate body, and an opening region portion located within the substrate opening in a plan view, the through hole penetrates the mask main body layer and the opening region portion, and it may be configured in this way.

[0035] As an eleventh aspect of the present disclosure, in the vapor deposition mask according to the tenth aspect described above, the opening dimension of the through hole in a predetermined direction on the second surface is larger than the opening dimension of the through hole in the predetermined direction on the first surface, and it may be configured in this way.

[0036] As a twelfth aspect of the present disclosure, in the vapor deposition mask according to each of the first to ninth aspects described above, the mask substrate has a substrate body that defines the substrate opening, the mask intermediate layer includes a main body region portion located between the mask main body layer and the substrate body, and a mask layer opening formed along the substrate opening in a plan view, the through hole penetrates the mask main body layer, and it may be configured in this way.

[0037] As a thirteenth aspect of the present disclosure, in the vapor deposition mask according to the twelfth aspect described above, the opening dimension of the through hole in a predetermined direction on the surface of the mask main body layer facing the mask substrate is larger than the opening dimension of the through hole in the predetermined direction on the first surface, and it may be configured in this way.

[0038] As a fourteenth aspect of the present disclosure, in the vapor deposition mask according to each of the first to thirteenth aspects described above, The mask layer has two or more of the through holes, In a plan view, two or more of the through holes are located within the substrate opening, and it may be configured in this way.

[0039] As a 15th aspect of the present disclosure, in the vapor deposition mask according to the 14th aspect described above, the mask layer has two or more groups of through holes each composed of two or more of the through holes, In a plan view, two or more of the groups of through holes are located within the substrate opening, and it may be configured in this way.

[0040] As a 16th aspect of the present disclosure, in the vapor deposition mask according to the 14th aspect described above, the mask substrate has two or more of the substrate openings, the mask layer has two or more groups of through holes each composed of two or more of the through holes, In a plan view, two or more of the groups of through holes are located within each of the substrate openings, and it may be configured in this way.

[0041] As a 17th aspect of the present disclosure, in the vapor deposition mask according to the 14th aspect described above, the mask substrate has two or more of the substrate openings, the mask layer has two or more groups of through holes each composed of two or more of the through holes, In a plan view, one of the groups of through holes is located within each of the substrate openings, and it may be configured in this way.

[0042] As an 18th aspect of the present disclosure, in the vapor deposition mask according to each of the 1st aspect to the 17th aspect described above, the substrate opening is formed in a rectangular shape in a plan view, Curved portions are provided at four corners of the contour of the substrate opening in a plan view, and it may be configured in this way.

[0043] As a 19th aspect of the present disclosure, in the vapor deposition mask according to each of the above-described 1st to 9th aspects, a first alignment mark is provided on a surface of the mask substrate opposite to the mask layer. This may be the case.

[0044] As a 20th aspect of the present disclosure, in the vapor deposition mask according to the above-described 19th aspect, the mask substrate has a substrate body that defines the substrate opening and an inner protruding portion that protrudes inward from the substrate body in a plan view. The first alignment mark is located on the inner protruding portion. This may be the case.

[0045] As a 21st aspect of the present disclosure, in the vapor deposition mask according to the above-described 19th aspect or the above-described 20th aspect, a second alignment mark is provided at a position closer to the through hole than the first alignment mark. This may be the case.

[0046] As a 22nd aspect of the present disclosure, in the vapor deposition mask according to the above-described 21st aspect, the mask layer has two or more through holes, two or more through hole groups formed by the two or more through holes, and mask bars provided between the adjacent through hole groups. The second alignment mark is located on the mask bar. This may be the case.

[0047] As a 23rd aspect of the present disclosure, in the vapor deposition mask according to the above-described 22nd aspect, the mask bar includes a first mask bar and a second mask bar that extend in directions perpendicular to each other in a plan view. The second alignment mark is located at an intersection where the first mask bar and the second mask bar intersect. This may be the case.

[0048] As a 24th aspect of the present disclosure, in the vapor deposition mask according to each of the above-described 1st to 23rd aspects, in a plan view, an outer edge of the mask body layer is located inside an outer edge of the mask intermediate layer. This may be the case.

[0049] As a 25th aspect of the present disclosure, in the vapor deposition mask according to each of the above-described 1st to 24th aspects, the mask body layer includes two or more body islands, and a groove penetrating the mask body layer is located between two adjacent body islands. This may be the case.

[0050] As a 26th aspect of the present disclosure, in the vapor deposition mask according to each of the above-described 1st to 25th aspects, the mask layer has a mask insulating layer forming the first surface, the mask body layer includes two or more body islands, and the mask insulating layer is located between two adjacent body islands. This may be the case.

[0051] As a 27th aspect of the present disclosure, in the vapor deposition mask according to each of the above-described 1st to 26th aspects, the mask layer has two or more through-hole groups formed by two or more of the through-holes, the mask layer has a mask insulating layer forming the first surface, and the mask insulating layer is located between two adjacent through-hole groups. This may be the case.

[0052] As a 28th aspect of the present disclosure, in the vapor deposition mask according to each of the above-described 1st to 27th aspects, the mask body layer includes dummy body islands located at positions not overlapping the substrate opening in a plan view. This may be the case.

[0053] The 29th aspect of the present disclosure is a vapor deposition mask according to each of the 1st to 28th aspects described above, and a frame for supporting the mask substrate of the vapor deposition mask, the vapor deposition mask with a frame. That's it.

[0054] The 30th aspect of the present disclosure is a substrate preparation step of preparing a mask substrate containing silicon, a mask layer forming step of forming a mask layer having a first surface and a second surface located on the opposite side of the first surface and facing the mask substrate on the mask substrate, a substrate opening forming step of forming a substrate opening in the mask substrate, a through hole forming step of forming a through hole penetrating the mask layer, and in a plan view, the through hole is located in the substrate opening, The mask layer forming step includes a mask intermediate layer forming step of forming a mask intermediate layer on a surface of the mask substrate facing the mask layer, and a mask main body layer forming step of forming a mask main body layer on a surface of the mask intermediate layer opposite to the mask substrate, The mask main body layer contains a metal material, a method for manufacturing a vapor deposition mask. That's it.

[0055] As the 31st aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the 30th aspect described above, in the through hole forming step, the through hole is formed by irradiating the mask layer with laser light. It may be like this.

[0056] As the 32nd aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the 31st aspect described above, the through hole forming step is performed after the substrate opening forming step, the laser light is irradiated onto the second surface of the mask layer through the substrate opening. It may be done in this way.

[0057] As a 33rd aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the above-described 31st aspect or the above-described 33rd aspect, the laser light is femtosecond laser light. It may be done in this way.

[0058] As a 34th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to each of the above-described 31st aspect to the above-described 32nd aspect, in the through-hole forming step, the laser light is irradiated onto the mask layer through a mask hole corresponding to the through-hole of the photomask. It may be done in this way.

[0059] As a 35th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the above-described 34th aspect, the photomask has a plurality of the mask holes, in the through-hole forming step, the laser light is irradiated onto the mask layer through the plurality of the mask holes of the photomask. It may be done in this way.

[0060] As a 36th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to each of the above-described 30th aspect to the above-described 35th aspect, the mask substrate has a substrate body that defines the substrate opening, the mask intermediate layer includes a main body region portion located between the mask main body layer and the substrate body, and an opening region portion located within the substrate opening in a plan view, in the through-hole forming step, the through-hole is formed so as to penetrate the mask main body layer and the opening region portion. It may be done in this way.

[0061] As a 37th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the above-described 36th aspect, The opening dimension of the through hole in the predetermined direction on the second surface is larger than the opening dimension of the through hole in the predetermined direction on the first surface. This may be the case.

[0062] As a 38th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to each of the above-described 30th aspect to the above-described 35th aspect, After the substrate opening forming step, a mask layer opening forming step of forming a mask layer opening along the substrate opening in a plan view is provided in the mask intermediate layer. In the through hole forming step, the through hole is formed so as to penetrate the mask main body layer. This may be the case.

[0063] As a 39th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the above-described 38th aspect, The opening dimension of the through hole in the predetermined direction on the surface of the mask main body layer facing the mask substrate is larger than the opening dimension of the through hole in the predetermined direction on the first surface. This may be the case.

[0064] A 40th aspect of the present disclosure is A substrate preparation step of preparing a mask substrate containing silicon, A mask layer forming step of forming a mask layer having a first surface and a second surface located on the opposite side of the first surface and facing the mask substrate on the mask substrate, A substrate opening forming step of forming a substrate opening in the mask substrate, A mask layer opening forming step of forming a mask layer opening along the substrate opening in a plan view in the mask layer, The mask layer forming step includes a mask intermediate layer forming step of forming a mask intermediate layer on the surface of the mask substrate facing the mask layer, and a mask main body layer forming step of forming a mask main body layer on the surface of the mask intermediate layer opposite to the mask substrate and forming a through hole penetrating the mask main body layer. In the mask layer opening formation step, the mask layer opening is formed in the mask intermediate layer, In a plan view, the through hole is located within the substrate opening, The mask body layer contains a metal material. Method for manufacturing a vapor deposition mask, is.

[0065] As a 41st aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the 40th aspect described above, In the mask body layer formation step, a resist layer is formed in a pattern on the surface of the mask intermediate layer opposite to the mask substrate so as to correspond to the through hole. It may be like this.

[0066] As a 42nd aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the 40th aspect or the 41st aspect described above, The opening dimension in a predetermined direction of the through hole on the surface of the mask body layer facing the mask substrate is larger than the opening dimension in the predetermined direction of the through hole on the first surface. It may be like this.

[0067] As a 43rd aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to each of the 40th aspect to the 42nd aspect described above, in the mask body layer formation step, a mask insulating layer is formed in a pattern on the surface of the mask intermediate layer opposite to the mask substrate so as to correspond to the through hole, The mask body layer includes two or more body islands, The mask insulating layer is located between two adjacent body islands. It may be like this.

[0068] As a 44th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to each of the 30th aspect to the 43rd aspect described above, The metal material of the mask body layer is a magnetic metal material. It may be like this.

[0069] In a 45th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to each of the above-described 30th aspect to the above-described 44th aspect, the thickness of the mask intermediate layer is smaller than the thickness of the mask main body layer. This may be the case.

[0070] In a 46th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to each of the above-described 30th aspect to the above-described 45th aspect, the substrate opening forming step includes a resist layer forming step of forming a resist layer having a resist opening on a surface of the mask substrate opposite to the mask layer, and a substrate etching step of etching the mask substrate through the resist opening to form the substrate opening. This may be the case.

[0071] In a 47th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the above-described 46th aspect, the mask intermediate layer includes a substrate-side layer containing a material that can ensure adhesion to the mask substrate and has resistance to an etching medium used in the substrate etching step. This may be the case.

[0072] In a 48th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the above-described 47th aspect, the mask intermediate layer includes a main body-side layer that faces the mask main body layer and contains a material that can ensure adhesion to the mask main body layer. This may be the case.

[0073] In a 49th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the above-described 48th aspect, in the mask layer forming step, the mask main body layer is formed by plating. the mask intermediate layer is located between the substrate-side layer and the main body-side layer. including an intermediate layer containing a material capable of protecting the substrate-side layer from the plating solution for forming the mask body layer It may be like this.

[0074] As a 50th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the 47th aspect described above, the substrate-side layer may be in contact with the mask body layer and in contact with the mask substrate.

[0075] As a 51st aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to each of the 30th aspect to the 50th aspect described above, in the mask layer forming step, the mask intermediate layer may be formed by sputtering. It may be like this.

[0076] As a 52nd aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to each of the 30th aspect to the 50th aspect described above, in the mask layer forming step, the mask intermediate layer may be formed by vapor deposition.

[0077] As a 53rd aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to each of the 30th aspect to the 52nd aspect described above, the mask layer has two or more of the through holes, in a plan view, two or more of the through holes are located within the substrate opening. It may be like this.

[0078] As a 54th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the 53rd aspect described above, the mask layer has two or more through hole groups each composed of two or more of the through holes, in a plan view, two or more of the through hole groups are located within the substrate opening. It may be like this.

[0079] As a 55th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the 53rd aspect described above, the mask substrate has two or more of the substrate openings, the mask layer has two or more through-hole groups each composed of two or more of the through-holes, in a plan view, two or more of the through-hole groups may be located within each of the substrate openings.

[0080] As a 56th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the 53rd aspect described above, the mask substrate has two or more of the substrate openings, the mask layer has two or more through-hole groups each composed of two or more of the through-holes, in a plan view, one of the through-hole groups may be located within each of the substrate openings, like this.

[0081] As a 57th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to each of the 30th aspect to the 56th aspect described above, the substrate opening is formed in a rectangular shape in a plan view, curved portions are provided at four corners of the contour of the substrate opening in a plan view, like this.

[0082] As a 58th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to each of the 30th aspect to the 57th aspect described above, a step of forming a first alignment mark on a surface of the mask substrate opposite to the mask layer is provided, like this.

[0083] As a 59th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the 58th aspect described above, the mask substrate has a substrate body that defines the substrate opening and an inner protruding portion that protrudes inward from the substrate body in a plan view, The first alignment mark is located at the inner protruding portion, may be used.

[0084] As a 60th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the above-described 58th aspect or the above-described 59th aspect, a step of forming a second alignment mark at a position closer to the through hole than the first alignment mark is provided. may be used.

[0085] As a 61st aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the above-described 60th aspect, the mask layer has two or more of the through holes, two or more through hole groups formed by the two or more through holes, and mask bars provided between the adjacent through hole groups. The second alignment mark is located on the mask bar. may be used.

[0086] As a 62nd aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the above-described 61st aspect, the mask bar includes a first mask bar and a second mask bar extending in directions orthogonal to each other in a plan view. The second alignment mark is located at an intersection where the first mask bar and the second mask bar intersect. may be used.

[0087] As a 63rd aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to each of the above-described 30th aspect to the above-described 62nd aspect, in a plan view, an outer edge of the mask body layer is located inside an outer edge of the mask intermediate layer. may be used.

[0088] As a 64th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to each of the above-described 30th aspect to the above-described 63rd aspect, The mask body layer includes two or more body islands, and a groove penetrating the mask body layer is located between two adjacent body islands. This may be the case.

[0089] In a 65th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to each of the 30th aspect to the 64th aspect described above, the mask layer has two or more through-hole groups composed of two or more of the through-holes, the mask layer has a mask insulating layer forming the first surface, and the mask insulating layer may be located between two adjacent through-hole groups.

[0090] In a 66th aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to each of the 30th aspect to the 65th aspect described above, the mask body layer may include dummy body islands located at positions that do not overlap with the substrate opening in a plan view. This may be the case.

[0091] Each of the 30th aspect to the 66th aspect described above may be a vapor deposition mask manufactured by the method for manufacturing a vapor deposition mask according to each of the 30th aspect to the 66th aspect.

[0092] A 67th aspect of the present disclosure is a vapor deposition mask preparation step of preparing the vapor deposition mask by the method for manufacturing a vapor deposition mask according to each of the 30th aspect to the 66th aspect described above, a close contact step of bringing the first surface of the mask layer of the vapor deposition mask into close contact with a vapor deposition substrate, and a vapor deposition step of forming a vapor deposition layer by vapor-depositing a vapor deposition material on the vapor deposition substrate through the through-holes of the vapor deposition mask, and is a method for manufacturing an organic device. That's it.

[0093] The above-described 67th aspect may be an organic device manufactured by the method for manufacturing an organic device according to the 67th aspect.

[0094] The 68th aspect of the present disclosure is a vapor deposition mask preparation step of preparing the vapor deposition mask by a method for manufacturing a vapor deposition mask according to each of the above-described 30th aspect to the above-described 66th aspect, and a frame attachment step of attaching a frame to the mask substrate of the vapor deposition mask, the method for manufacturing a vapor deposition mask with a frame. It is.

[0095] The above-described 68th aspect may be a vapor deposition mask with a frame manufactured by the method for manufacturing a vapor deposition mask with a frame according to the 68th aspect.

[0096] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the drawings. The embodiments shown below are examples of the embodiments of the present disclosure, and the present disclosure is not limited to these embodiments only.

[0097] First, a vapor deposition apparatus 80 for performing a vapor deposition process of vapor-depositing a vapor deposition material on an object will be described with reference to FIG. As shown in FIG. 1, the vapor deposition apparatus 80 may include a vapor deposition source (for example, crucible 81), a heater 83, and a vapor deposition mask 10. Further, the vapor deposition apparatus 80 may further include an exhaust means (not shown). The exhaust means can reduce the pressure inside the vapor deposition apparatus 80 to a vacuum atmosphere. The crucible 81 is provided inside the vapor deposition apparatus 80 and is configured to accommodate a vapor deposition material 82 such as an organic light-emitting material. The heater 83 is configured to heat the crucible 81. By heating the crucible 81 in a vacuum atmosphere, the vapor deposition material 82 evaporates.

[0098] The vapor deposition mask 10 is disposed in the vapor deposition apparatus 80 so as to face the crucible 81. The vapor deposition mask 10 may be disposed above the crucible 81. A vapor deposition substrate 110 is disposed so as to face the vapor deposition mask 10. The vapor deposition substrate 110 is an object to which the vapor deposition material 82 is to be attached. The vapor deposition substrate 110 may be disposed above the vapor deposition mask 10. The vapor deposition material flying from the crucible 81 passes through a through hole 40 (described later) of the vapor deposition mask 10 and adheres to the vapor deposition substrate 110.

[0099] As shown in FIG. 1, the vapor deposition apparatus 80 may include a magnet 85 disposed on the surface of the vapor deposition substrate 110 opposite to the vapor deposition mask 10. By the magnetic force of the magnet 85, the vapor deposition mask 10 can be attracted in the direction toward the magnet 85, and the vapor deposition mask 10 can be brought into close contact with the vapor deposition substrate 110. Thereby, it is possible to suppress the occurrence of a shadow (described later) in the vapor deposition process. For this reason, the shape accuracy and the position accuracy of the vapor deposition layer (or the organic layers 130A, 130B, 130C of the organic device 100 described later, see FIGS. 15A and 15B) formed by the vapor deposition material 82 attached to the vapor deposition substrate 110 can be improved. A cooling plate (not shown) for cooling the vapor deposition substrate 110 during vapor deposition may be interposed between the vapor deposition substrate 110 and the magnet 85.

[0100] Next, the vapor deposition mask 10 according to the present embodiment will be described in more detail with reference to FIGS. 1 to 5B.

[0101] As shown in FIGS. 1 to 3, the vapor deposition mask 10 may include a mask layer 20 provided with a through hole 40 (described later) and a mask substrate 15 that supports the mask layer 20. The mask substrate 15 may be located on a second surface 20b (described later) of the mask layer 20.

[0102] As shown in FIG. 2, the vapor deposition mask 10 according to the present embodiment may have a planar shape similar to that of a silicon wafer used in semiconductor manufacturing when viewed in a direction perpendicular to the first surface 20a described later (hereinafter referred to as a plan view). In this case, both the mask layer 20 and the mask substrate 15 may have a shape similar to that of a silicon wafer. Similar to a general wafer shape, the silicon wafer may have a planar shape in which a part of a circle called an orientation flat is linearly cut out (see FIG. 2). Alternatively, the silicon wafer may have a planar shape in which a part of a circle called a notch is cut out in a concave shape.

[0103] As shown in FIG. 3, the mask substrate 15 may have a first substrate surface 15a facing the mask layer 20 and a second substrate surface 15b located on the side opposite to the first substrate surface 15a. The mask layer 20 (more specifically, the substrate-side layer 26 described later) may be attached or fixed to the first substrate surface 15a. The mask layer 20 and the mask substrate 15 may be inseparably attached to each other by a layer (for example, the second metal layer 22 described later) formed by a sputtering process or a vapor deposition process for forming the mask layer 20. FIG. 3 is a diagram schematically showing a cross section taken along line A-A in FIG. 2. In order to make the drawing easier to understand, the number of through-hole groups 30 and the number of through-holes 40 are reduced.

[0104] As shown in FIGS. 2 and 3, the mask substrate 15 may have a substrate opening 16 that exposes the through hole 40 of the mask layer 20. The substrate opening 16 extends from the first substrate surface 15a to the second substrate surface 15b and penetrates the mask substrate 15. In a plan view, the through hole 40 may be located within the substrate opening 16, or a plurality of through holes 40 may be located. In one embodiment, the mask substrate 15 may have a frame shape in a plan view. As shown in FIG. 2, the mask substrate 15 may have a substrate frame 17 having a planar shape along the outer edge 15c of the mask substrate 15, which is located outside the through hole group 30. This substrate frame 17 is an example of the substrate body. The substrate opening 16 may be defined inside the substrate frame 17. As shown in FIG. 2, the substrate opening 16 may have a contour similar to the outer edge 15c of the mask substrate 15 in a plan view, or may have a circular contour.

[0105] The diameter of the mask substrate 15 is not particularly limited, but may be, for example, 150 mm (6 inches), 200 mm (8 inches), 300 mm (12 inches), or 450 mm (18 inches).

[0106] The thickness H1 of the mask substrate 15 is not particularly limited, but may be 0.625 mm when the diameter is 150 mm, or may be 0.725 mm when the diameter is 200 mm. Also, the thickness H1 may be 0.775 mm when the diameter is 300 mm.

[0107] The mask substrate 15 may contain silicon. For example, when a glass substrate is used as the deposition substrate 110, the thermal expansion coefficient of the mask substrate 15 can be adjusted to a value equal to or close to that of the glass substrate. During the deposition process, the shape accuracy and position accuracy of the organic layers 130A, 130B, and 130C formed on the deposition substrate 110 may decrease due to the difference in the thermal expansion coefficients between the deposition mask 10 including the mask layer 20 and the deposition substrate 110. Hereinafter, this decrease may also be referred to as a decrease in accuracy. By adjusting the thermal expansion coefficient of the mask substrate 15 to a value equal to or close to that of the glass substrate, a decrease in accuracy can be suppressed. Further, when a silicon substrate is used as the deposition substrate 110, the mask substrate 15 can be made of the same type of material or the same material as the deposition substrate 110. In this case, the difference in the thermal expansion coefficients between the mask substrate 15 and the deposition substrate 110 can be reduced. Also, the thermal expansion coefficients of the mask substrate 15 and the deposition substrate 110 can be made equal. Thereby, a decrease in accuracy can be further suppressed.

[0108] As shown in FIG. 3, the mask layer 20 may have a first surface 20a and a second surface 20b that is located on the side opposite to the first surface 20a and faces the mask substrate 15. The first surface 20a may be the surface to which the deposition substrate 110 adheres during deposition. The second surface 20b may be attached to the mask substrate 15.

[0109] The thickness H2 of the mask layer 20 may be, for example, 2 μm or more, 3 μm or more, 4 μm or more, or 5 μm or more. By setting the thickness H2 to 2 μm or more, the mechanical strength of the mask layer 20 can be ensured and deformation or breakage during handling can be suppressed. Further, the thickness H2 may be, for example, 6 μm or less, 7 μm or less, 8 μm or less, or 9 μm or less. By setting the thickness H2 to 9 μm or less, the generation of shadows can be suppressed. The range of the thickness H2 may be defined by a first group consisting of 2 μm, 3 μm, 4 μm, and 5 μm, and / or a second group consisting of 6 μm, 7 μm, 8 μm, and 9 μm. The range of the thickness H2 may be defined by a combination of any one of the values included in the above-described first group and any one of the values included in the above-described second group. The range of the thickness H2 may be defined by a combination of any two of the values included in the above-described first group. The range of the thickness H2 may be defined by a combination of any two of the values included in the above-described second group.For example, it may be 2 μm or more and 9 μm or less, may be 2 μm or more and 8 μm or less, may be 2 μm or more and 7 μm or less, may be 2 μm or more and 6 μm or less, may be 2 μm or more and 5 μm or less, may be 2 μm or more and 4 μm or less, may be 2 μm or more and 3 μm or less, may be 3 μm or more and 9 μm or less, may be 3 μm or more and 8 μm or less, may be 3 μm or more and 7 μm or less, may be 3 μm or more and 6 μm or less, may be 3 μm or more and 5 μm or less, may be 3 μm or more and 4 μm or less, may be 4 μm or more and 9 μm or less, may be 4 μm or more and 8 μm or less, may be 4 μm or more and 7 μm or less, may be 4 μm or more and 6 μm or less, may be 4 μm or more and 5 μm or less, may be 5 μm or more and 9 μm or less, may be 5 μm or more and 8 μm or less, may be 5 μm or more and 7 μm or less, may be 5 μm or more and 6 μm or less, may be 6 μm or more and 9 μm or less, may be 6 μm or more and 8 μm or less, may be 6 μm or more and 7 μm or less, may be 7 μm or more and 9 μm or less, may be 7 μm or more and 8 μm or less, may be 8 μm or more and 9 μm or less.

[0110] In one embodiment, the mask layer 20 may include a first metal layer 21 located on the side of the first surface 20a and a second metal layer 22 located on the side of the second surface 20b rather than the first metal layer 21. The first metal layer 21 may be a layer forming the first surface 20a. The first metal layer 21 is an example of the mask main body layer and may also be referred to as the metal main body layer. The first metal layer 21 may be adhered and laminated to the second metal layer 22. The second metal layer 22 is an example of the mask intermediate layer and may also be referred to as the metal intermediate layer. The second metal layer 22 is located between the first metal layer 21 and the mask substrate 15. The thickness H4 of the second metal layer 22 may be smaller than the thickness H3 of the first metal layer 21. The first metal layer 21 may be formed by plating treatment as described later. The second metal layer 22 may be formed by sputtering treatment as described later.

[0111] The second metal layer 22 may include a main body region portion 22a located between the first metal layer 21 and the substrate frame 17, and an opening region portion 22b located within the substrate opening 16 in a plan view. In the example shown in FIG. 3, the second metal layer 22 is formed over the entire surface of the mask substrate 15 facing the first metal layer 21. Both the main body region portion 22a and the opening region portion 22b may be constituted by a main body side layer 25, a substrate side layer 26, and an intermediate layer 27, which will be described later.

[0112] As shown in FIG. 3, in a plan view, at least a part of the outer edge 21c of the first metal layer 21 may be located at a position overlapping with the outer edge 22c of the second metal layer 22. The outer edge 21c of the first metal layer 21 may be entirely located at a position overlapping with the outer edge 22c of the second metal layer 22. The outer edges of the main body side layer 25, the substrate side layer 26, and the intermediate layer 27, which will be described later, may overlap in a plan view to constitute the outer edge 22c of the second metal layer 22. In a plan view, at least a part of the outer edge 21c of the first metal layer 21 and at least a part of the outer edge 22c of the second metal layer 22 may be located at positions overlapping with the outer edge 15c of the mask substrate 15 described above. The outer edge 21c of the first metal layer 21 and the outer edge 22c of the second metal layer 22 may be entirely located at positions overlapping with the outer edge 15c of the mask substrate 15.

[0113] The second metal layer 22 may include a main body side layer 25 located on the side of the first metal layer 21, and a substrate side layer 26 located on the side of the mask substrate 15 rather than the main body side layer 25. The main body side layer 25 may be located on the side of the first metal layer 21 rather than the substrate side layer 26. The main body side layer 25 may face the first metal layer 21. The substrate side layer 26 may face the mask substrate 15. The surface of the substrate side layer 26 facing the mask substrate 15 may constitute the second surface 20b described above. An intermediate layer 27 may be located between the main body side layer 25 and the substrate side layer 26. The second metal layer 22 may have a three-layer structure.

[0114] The materials constituting the body-side layer 25, the substrate-side layer 26, and the intermediate layer 27 may be different from each other. The body-side layer 25, the substrate-side layer 26, and the intermediate layer 27 may be made of different metal materials. The body-side layer 25, the substrate-side layer 26, and the intermediate layer 27 may be configured as layers having specific purposes. The body-side layer 25 may be, for example, a layer capable of ensuring adhesion to the first metal layer 21. The substrate-side layer 26 may be, for example, a layer capable of ensuring adhesion to the mask substrate 15. Further, the substrate-side layer 26 may be a layer having resistance to an etching medium used in an etching process of the substrate described later. More specifically, the substrate-side layer 26 may be a layer capable of suppressing erosion by the etching medium. The intermediate layer 27 may be, for example, a layer capable of protecting the substrate-side layer 26 from a plating solution used in the first metal layer forming process. More specifically, when the body-side layer 25 is formed of copper as described later and the thickness H5 (described later) of the body-side layer 25 is thin, the body-side layer 25 may be formed in a porous state. In this case, since the plating solution can reach the intermediate layer 27 through the body-side layer 25, the intermediate layer 27 may have resistance to this plating solution. For example, when the body-side layer 25 is formed of copper and the substrate-side layer 26 is formed of an aluminum alloy containing neodymium, the intermediate layer 27 may be a layer capable of ensuring adhesion between the body-side layer 25 and the substrate-side layer 26.

[0115] The thickness H3 of the first metal layer 21 may be, for example, 0.5 μm or more, 1.0 μm or more, 1.5 μm or more, or 2.0 μm or more. By setting the thickness H3 to 0.5 μm or more, mechanical strength can be ensured, deformation or breakage during handling can be suppressed, and defects such as pinholes can be suppressed. Further, the thickness H3 may be, for example, 10.0 μm or less, 15.0 μm or less, 20.0 μm or less, or 25.0 μm or less. By setting the thickness H3 to 25.0 μm or less, the generation of shadows can be suppressed. The range of the thickness H3 may be determined by the first group consisting of 0.5 μm, 1.0 μm, 1.5 μm, and 2.0 μm, and / or the second group consisting of 10.0 μm, 15.0 μm, 20.0 μm, and 25.0 μm. The range of the thickness H3 may be determined by a combination of any one of the values included in the above-mentioned first group and any one of the values included in the above-mentioned second group. The range of the thickness H3 may be determined by a combination of any two of the values included in the above-mentioned first group. The range of the thickness H3 may be determined by a combination of any two of the values included in the above-mentioned second group.For example, it may be 0.5 μm or more and 25.0 μm or less, may be 0.5 μm or more and 20.0 μm or less, may be 0.5 μm or more and 15.0 μm or less, may be 0.5 μm or more and 10.0 μm or less, may be 0.5 μm or more and 2.0 μm or less, may be 0.5 μm or more and 1.5 μm or less, may be 0.5 μm or more and 1.0 μm or less, may be 1.0 μm or more and 25.0 μm or less, may be 1.0 μm or more and 20.0 μm or less, may be 1.0 μm or more and 15.0 μm or less, may be 1.0 μm or more and 10.0 μm or less, may be 1.0 μm or more and 2.0 μm or less, may be 1.0 μm or more and 1.5 μm or less, may be 1.5 μm or more and 25.0 μm or less, may be 1.5 μm or more and 20.0 μm or less, may be 1.5 μm or more and 15.0 μm or less, may be 1.5 μm or more and 10.0 μm or less, may be 1.5 μm or more and 2.0 μm or less, may be 2.0 μm or more and 25.0 μm or less, may be 2.0 μm or more and 20.0 μm or less, may be 2.0 μm or more and 15.0 μm or less, may be 2.0 μm or more and 10.0 μm or less, may be 10.0 μm or more and 25.0 μm or less, may be 10.0 μm or more and 20.0 μm or less, may be 10.0 μm or more and 15.0 μm or less, may be 15.0 μm or more and 25.0 μm or less, may be 15.0 μm or more and 20.0 μm or less, may be 20.0 μm or more and 25.0 μm or less.

[0116] Alternatively, the thickness H3 of the first metal layer 21 may be, for example, 3.2 μm or more, 3.4 μm or more, 3.6 μm or more, or 3.8 μm or more. By setting the thickness H3 to 3.2 μm or more, the first metal layer 21 having mechanical strength and capable of suppressing deformation or breakage during handling can be stably formed by the plating process described below. Further, the thickness H3 may be, for example, 4.2 μm or less, 4.4 μm or less, 4.6 μm or less, or 4.8 μm or less. By setting the thickness H3 to 4.8 μm or less, the first metal layer 21 can be efficiently formed. The range of the thickness H3 may be determined by a first group consisting of 3.2 μm, 3.4 μm, 3.6 μm, and 3.8 μm, and / or a second group consisting of 4.2 μm, 4.4 μm, 4.6 μm, and 4.8 μm. The range of the thickness H3 may be determined by a combination of any one of the values included in the above-described first group and any one of the values included in the above-described second group. The range of the thickness H3 may be determined by a combination of any two of the values included in the above-described first group. The range of the thickness H3 may be determined by a combination of any two of the values included in the above-described second group.For example, it may be 3.2 μm or more and 4.8 μm or less, may be 3.2 μm or more and 4.6 μm or less, may be 3.2 μm or more and 4.4 μm or less, may be 3.2 μm or more and 4.2 μm or less, may be 3.2 μm or more and 3.8 μm or less, may be 3.2 μm or more and 3.6 μm or less, may be 3.2 μm or more and 3.4 μm or less, may be 3.4 μm or more and 4.8 μm or less, may be 3.4 μm or more and 4.6 μm or less, may be 3.4 μm or more and 4.4 μm or less, may be 3.4 μm or more and 4.2 μm or less, may be 3.4 μm or more and 3.8 μm or less, may be 3.4 μm or more and 3.6 μm or less, may be 3.6 μm or more and 4.8 μm or less, may be 3.6 μm or more and 4.6 μm or less, may be 3.6 μm or more and 4.4 μm or less, may be 3.6 μm or more and 4.2 μm or less, may be 3.6 μm or more and 3.8 μm or less, may be 3.8 μm or more and 4.8 μm or less, may be 3.8 μm or more and 4.6 μm or less, may be 3.8 μm or more and 4.4 μm or less, may be 3.8 μm or more and 4.2 μm or less, may be 4.2 μm or more and 4.8 μm or less, may be 4.2 μm or more and 4.6 μm or less, may be 4.2 μm or more and 4.4 μm or less, may be 4.4 μm or more and 4.8 μm or less, may be 4.4 μm or more and 4.6 μm or less, may be 4.6 μm or more and 4.8 μm or less.

[0117] The thickness H4 of the second metal layer 22 may be, for example, 100 nm or more, 200 nm or more, 300 nm or more, or 400 nm or more. By setting the thickness H4 to 100 nm or more, the second metal layer 22 can be stably formed by the sputtering process described later. Also, the thickness H4 may be, for example, 800 nm or less, 1000 nm or less, 1200 nm or less, or 1500 nm or less. By setting the thickness H4 to 1500 nm or less, the second metal layer 22 can be efficiently formed. The range of the thickness H4 may be determined by a first group consisting of 100 nm, 200 nm, 300 nm, and 400 nm, and / or a second group consisting of 800 nm, 1000 nm, 1200 nm, and 1500 nm. The range of the thickness H4 may be determined by a combination of any one value included in the above-described first group and any one value included in the above-described second group. The range of the thickness H4 may be determined by a combination of any two values included in the above-described first group. The range of the thickness H4 may be determined by a combination of any two values included in the above-described second group.For example, it may be 100 nm or more and 1500 nm or less, may be 100 nm or more and 1200 nm or less, may be 100 nm or more and 1000 nm or less, may be 100 nm or more and 800 nm or less, may be 100 nm or more and 400 nm or less, may be 100 nm or more and 300 nm or less, may be 100 nm or more and 200 nm or less, may be 200 nm or more and 1500 nm or less, may be 200 nm or more and 1200 nm or less, may be 200 nm or more and 1000 nm or less, may be 200 nm or more and 800 nm or less, may be 200 nm or more and 400 nm or less, may be 200 nm or more and 300 nm or less, may be 300 nm or more and 1500 nm or less, may be 300 nm or more and 1200 nm or less, may be 300 nm or more and 1000 nm or less, may be 300 nm or more and 800 nm or less, may be 300 nm or more and 400 nm or less, may be 400 nm or more and 1500 nm or less, may be 400 nm or more and 1200 nm or less, may be 400 nm or more and 1000 nm or less, may be 400 nm or more and 800 nm or less, may be 800 nm or more and 1500 nm or less, may be 800 nm or more and 1200 nm or less, may be 800 nm or more and 1000 nm or less, may be 1000 nm or more and 1500 nm or less, may be 1000 nm or more and 1200 nm or less, or may be 1200 nm or more and 1500 nm or less.

[0118] Alternatively, the thickness H4 of the second metal layer 22 may be, for example, 100 nm or more, 200 nm or more, 300 nm or more, or 400 nm or more. By setting the thickness H4 to 100 nm or more, the second metal layer 22 can be stably formed by the sputtering process described later. Also, the thickness H4 may be, for example, 500 nm or less, 600 nm or less, 700 nm or less, or 800 nm or less. By setting the thickness H4 to 800 nm or less, the second metal layer 22 can be formed more efficiently. The range of the thickness H4 may be determined by a first group consisting of 100 nm, 200 nm, 300 nm, and 400 nm, and / or a second group consisting of 500 nm, 600 nm, 700 nm, and 800 nm. The range of the thickness H4 may be determined by a combination of any one value included in the above-described first group and any one value included in the above-described second group. The range of the thickness H4 may be determined by a combination of any two values included in the above-described first group. The range of the thickness H4 may be determined by a combination of any two values included in the above-described second group.For example, it may be 100 nm or more and 800 nm or less, may be 100 nm or more and 700 nm or less, may be 100 nm or more and 600 nm or less, may be 100 nm or more and 500 nm or less, may be 100 nm or more and 400 nm or less, may be 100 nm or more and 300 nm or less, may be 100 nm or more and 200 nm or less, may be 200 nm or more and 800 nm or less, may be 200 nm or more and 700 nm or less, may be 200 nm or more and 600 nm or less, may be 200 nm or more and 500 nm or less, may be 200 nm or more and 400 nm or less, may be 200 nm or more and 300 nm or less, may be 300 nm or more and 800 nm or less, may be 300 nm or more and 700 nm or less, may be 300 nm or more and 600 nm or less, may be 300 nm or more and 500 nm or less, may be 300 nm or more and 400 nm or less, may be 400 nm or more and 800 nm or less, may be 400 nm or more and 700 nm or less, may be 400 nm or more and 600 nm or less, may be 400 nm or more and 500 nm or less, may be 500 nm or more and 800 nm or less, may be 500 nm or more and 700 nm or less, may be 500 nm or more and 600 nm or less, may be 600 nm or more and 800 nm or less, may be 600 nm or more and 700 nm or less, or may be 700 nm or more and 800 nm or less.

[0119] The thickness H5 of the body-side layer 25 may be, for example, 180 nm or more, 185 nm or more, 190 nm or more, or 195 nm or more. By setting the thickness H5 to 180 nm or more, the body-side layer 25 can be stably formed by the sputtering process described later. Also, the thickness H5 may be, for example, 800 nm or less, 1000 nm or less, 1200 nm or less, or 1500 nm or less. By setting the thickness H5 to 1500 nm or less, the body-side layer 25 can be efficiently formed by the sputtering process described later. The range of the thickness H5 may be determined by a first group consisting of 180 nm, 185 nm, 190 nm, and 195 nm, and / or a second group consisting of 800 nm, 1000 nm, 1200 nm, and 1500 nm. The range of the thickness H5 may be determined by a combination of any one of the values included in the above-described first group and any one of the values included in the above-described second group. The range of the thickness H5 may be determined by a combination of any two of the values included in the above-described first group. The range of the thickness H5 may be determined by a combination of any two of the values included in the above-described second group.For example, it may be 180 nm or more and 1500 nm or less, may be 180 nm or more and 1200 nm or less, may be 180 nm or more and 1000 nm or less, may be 180 nm or more and 800 nm or less, may be 180 nm or more and 195 nm or less, may be 180 nm or more and 190 nm or less, may be 180 nm or more and 185 nm or less, may be 185 nm or more and 1500 nm or less, may be 185 nm or more and 1200 nm or less, may be 185 nm or more and 1000 nm or less, may be 185 nm or more and 800 nm or less, may be 185 nm or more and 195 nm or less, may be 185 nm or more and 190 nm or less, may be 190 nm or more and 1500 nm or less, may be 190 nm or more and 1200 nm or less, may be 190 nm or more and 1000 nm or less, may be 190 nm or more and 800 nm or less, may be 190 nm or more and 195 nm or less, may be 195 nm or more and 1500 nm or less, may be 195 nm or more and 1200 nm or less, may be 195 nm or more and 1000 nm or less, may be 195 nm or more and 800 nm or less, may be 800 nm or more and 1500 nm or less, may be 800 nm or more and 1200 nm or less, may be 800 nm or more and 1000 nm or less, may be 1000 nm or more and 1500 nm or less, may be 1000 nm or more and 1200 nm or less, may be 1200 nm or more and 1500 nm or less.

[0120] Alternatively, the thickness H5 of the main body side layer 25 may be, for example, 180 nm or more, 185 nm or more, 190 nm or more, or 195 nm or more. By setting the thickness H5 to 180 nm or more, the main body side layer 25 can be stably formed by the sputtering process described later. Also, the thickness H5 may be, for example, 205 nm or less, 210 nm or less, 215 nm or less, or 220 nm or less. By setting the thickness H5 to 220 nm or less, the main body side layer 25 can be formed more efficiently by the sputtering process described later. The range of the thickness H5 may be determined by a first group consisting of 180 nm, 185 nm, 190 nm, and 195 nm, and / or a second group consisting of 205 nm, 210 nm, 215 nm, and 220 nm. The range of the thickness H5 may be determined by a combination of any one value included in the above-mentioned first group and any one value included in the above-mentioned second group. The range of the thickness H5 may be determined by a combination of any two values included in the above-mentioned first group. The range of the thickness H5 may be determined by a combination of any two values included in the above-mentioned second group.For example, it may be 180 nm or more and 220 nm or less, may be 180 nm or more and 215 nm or less, may be 180 nm or more and 210 nm or less, may be 180 nm or more and 205 nm or less, may be 180 nm or more and 195 nm or less, may be 180 nm or more and 190 nm or less, may be 180 nm or more and 185 nm or less, may be 185 nm or more and 220 nm or less, may be 185 nm or more and 215 nm or less, may be 185 nm or more and 210 nm or less, may be 185 nm or more and 205 nm or less, may be 185 nm or more and 195 nm or less, may be 185 nm or more and 190 nm or less, may be 190 nm or more and 220 nm or less, may be 190 nm or more and 215 nm or less, may be 190 nm or more and 210 nm or less, may be 190 nm or more and 205 nm or less, may be 190 nm or more and 195 nm or less, may be 195 nm or more and 220 nm or less, may be 195 nm or more and 215 nm or less, may be 195 nm or more and 210 nm or less, may be 195 nm or more and 205 nm or less, may be 205 nm or more and 220 nm or less, may be 205 nm or more and 215 nm or less, may be 205 nm or more and 210 nm or less, may be 210 nm or more and 220 nm or less, may be 210 nm or more and 215 nm or less, may be 215 nm or more and 220 nm or less.

[0121] The thickness H6 of the substrate-side layer 26 may be, for example, 90 nm or more, 92 nm or more, 94 nm or more, or 96 nm or more. By setting the thickness H6 to 90 nm or more, the substrate-side layer 26 can be stably formed by the sputtering process described later. Also, the thickness H6 may be, for example, 104 nm or less, 106 nm or less, 108 nm or less, or 110 nm or less. By setting the thickness H6 to 110 nm or less, the substrate-side layer 26 can be efficiently formed. The range of the thickness H6 may be determined by a first group consisting of 90 nm, 92 nm, 94 nm, and 96 nm, and / or a second group consisting of 104 nm, 106 nm, 108 nm, and 110 nm. The range of the thickness H6 may be determined by a combination of any one value included in the above-described first group and any one value included in the above-described second group. The range of the thickness H6 may be determined by a combination of any two values included in the above-described first group. The range of the thickness H6 may be determined by a combination of any two values included in the above-described second group.For example, it may be 90 nm or more and 110 nm or less, may be 90 nm or more and 108 nm or less, may be 90 nm or more and 106 nm or less, may be 90 nm or more and 104 nm or less, may be 90 nm or more and 96 nm or less, may be 90 nm or more and 94 nm or less, may be 90 nm or more and 92 nm or less, may be 92 nm or more and 110 nm or less, may be 92 nm or more and 108 nm or less, may be 92 nm or more and 106 nm or less, may be 92 nm or more and 104 nm or less, may be 92 nm or more and 96 nm or less, may be 92 nm or more and 94 nm or less, may be 94 nm or more and 110 nm or less, may be 94 nm or more and 108 nm or less, may be 94 nm or more and 106 nm or less, may be 94 nm or more and 104 nm or less, may be 94 nm or more and 96 nm or less, may be 96 nm or more and 110 nm or less, may be 96 nm or more and 108 nm or less, may be 96 nm or more and 106 nm or less, may be 96 nm or more and 104 nm or less, may be 104 nm or more and 110 nm or less, may be 104 nm or more and 108 nm or less, may be 104 nm or more and 106 nm or less, may be 106 nm or more and 110 nm or less, may be 106 nm or more and 108 nm or less, may be 108 nm or more and 110 nm or less.

[0122] The thickness H7 of the intermediate layer 27 may be, for example, 45 nm or more, 50 nm or more, 55 nm or more, or 65 nm or more. By setting the thickness H7 to 45 nm or more, the intermediate layer 27 can be stably formed by the sputtering process described later. Further, the thickness H7 may be, for example, 80 nm or less, 90 nm or less, 100 nm or less, or 110 nm or less. By setting the thickness H7 to 110 nm or less, the intermediate layer 27 can be efficiently formed. The range of the thickness H7 may be determined by a first group consisting of 45 nm, 50 nm, 55 nm, and 65 nm, and / or a second group consisting of 80 nm, 90 nm, 100 nm, and 110 nm. The range of the thickness H7 may be determined by a combination of any one of the values included in the above-described first group and any one of the values included in the above-described second group. The range of the thickness H7 may be determined by a combination of any two of the values included in the above-described first group. The range of the thickness H7 may be determined by a combination of any two of the values included in the above-described second group.For example, it may be 45 nm or more and 110 nm or less, may be 45 nm or more and 100 nm or less, may be 45 nm or more and 90 nm or less, may be 45 nm or more and 80 nm or less, may be 45 nm or more and 65 nm or less, may be 45 nm or more and 55 nm or less, may be 45 nm or more and 50 nm or less, may be 50 nm or more and 110 nm or less, may be 50 nm or more and 100 nm or less, may be 50 nm or more and 90 nm or less, may be 50 nm or more and 80 nm or less, may be 50 nm or more and 65 nm or less, may be 50 nm or more and 55 nm or less, may be 55 nm or more and 110 nm or less, may be 55 nm or more and 100 nm or less, may be 55 nm or more and 90 nm or less, may be 55 nm or more and 80 nm or less, may be 55 nm or more and 65 nm or less, may be 65 nm or more and 110 nm or less, may be 65 nm or more and 100 nm or less, may be 65 nm or more and 90 nm or less, may be 65 nm or more and 80 nm or less, may be 80 nm or more and 110 nm or less, may be 80 nm or more and 100 nm or less, may be 80 nm or more and 90 nm or less, may be 90 nm or more and 110 nm or less, may be 90 nm or more and 100 nm or less, or may be 100 nm or more and 110 nm or less.

[0123] Alternatively, the thickness H7 of the intermediate layer 27 may be, for example, 45 nm or more, 46 nm or more, 47 nm or more, or 48 nm or more. By setting the thickness H7 to 45 nm or more, the intermediate layer 27 can be stably formed by the sputtering process described later. Also, the thickness H7 may be, for example, 52 nm or less, 53 nm or less, 54 nm or less, or 55 nm or less. By setting the thickness H7 to 55 nm or less, the intermediate layer 27 can be efficiently formed. The range of the thickness H7 may be determined by a first group consisting of 45 nm, 46 nm, 47 nm, and 48 nm, and / or a second group consisting of 52 nm, 53 nm, 54 nm, and 55 nm. The range of the thickness H7 may be determined by a combination of any one of the values included in the above-described first group and any one of the values included in the above-described second group. The range of the thickness H7 may be determined by a combination of any two of the values included in the above-described first group. The range of the thickness H7 may be determined by a combination of any two of the values included in the above-described second group.For example, it may be 45 nm or more and 55 nm or less, it may be 45 nm or more and 54 nm or less, it may be 45 nm or more and 53 nm or less, it may be 45 nm or more and 52 nm or less, it may be 45 nm or more and 48 nm or less, it may be 45 nm or more and 47 nm or less, it may be 45 nm or more and 46 nm or less, it may be 46 nm or more and 55 nm or less, it may be 46 nm or more and 54 nm or less, it may be 46 nm or more and 53 nm or less, it may be 46 nm or more and 52 nm or less, it may be 46 nm or more and 48 nm or less, it may be 46 nm or more and 47 nm or less, it may be 47 nm or more and 55 nm or less, it may be 47 nm or more and 54 nm or less, it may be 47 nm or more and 53 nm or less, it may be 47 nm or more and 52 nm or less, it may be 47 nm or more and 48 nm or less, it may be 48 nm or more and 55 nm or less, it may be 48 nm or more and 54 nm or less, it may be 48 nm or more and 53 nm or less, it may be 48 nm or more and 52 nm or less, it may be 52 nm or more and 55 nm or less, it may be 52 nm or more and 54 nm or less, it may be 52 nm or more and 53 nm or less, it may be 53 nm or more and 55 nm or less, it may be 53 nm or more and 54 nm or less, it may be 54 nm or more and 55 nm or less.

[0124] The first metal layer 21 may contain a metal material. The metal material may be a magnetic metal material. As the material constituting the first metal layer 21, for example, an iron alloy containing nickel may be used. The iron alloy may further contain cobalt in addition to nickel. For example, as the material of the first metal layer 21, an iron alloy in which the total content of nickel and cobalt is 30% by mass or more and 54% by mass or less, and the content of cobalt is 0% by mass or more and 6% by mass or less may be used. As the iron alloy containing nickel, an Invar material containing 34% by mass or more and 38% by mass or less of nickel, a low thermal expansion Fe-Ni based plating alloy containing 38% by mass or more and 54% by mass or less of nickel, etc. may be used. As the iron alloy containing nickel and cobalt, a super Invar material containing cobalt in addition to 30% by mass or more and 34% by mass or less of nickel may be used. By using such an iron alloy, the thermal expansion coefficient of the first metal layer 21 can be lowered. For example, when a glass substrate is used as the vapor deposition substrate 110, the thermal expansion coefficient of the mask layer 20 can be adjusted to a value equal to or close to that of the glass substrate. Thereby, a decrease in accuracy can be suppressed.

[0125] As the material constituting the first metal layer 21, instead of the above-described iron alloy containing nickel, for example, nickel may be used, or a nickel alloy containing cobalt may be used. When a nickel alloy containing cobalt is used, as the material of the first metal layer 21, a nickel alloy in which the content of cobalt is 8% by mass or more and 10% by mass or less may be used. When such nickel or a nickel alloy is used, it is possible to suppress the component decomposition of the plating solution used in the first metal layer forming step described later, and improve the stability of the plating solution.

[0126] The material constituting the body-side layer 25 is not particularly limited as long as it can ensure adhesion to the first metal layer 21. The material constituting the body-side layer 25 may be a material that can function as a seed layer when the first metal layer 21 is formed by electrolytic plating or electroless plating. When performing electrolytic plating, the material constituting the body-side layer 25 may be a material with low electrical resistance or a material having plating solution resistance. For example, when performing electrolytic plating, the body-side layer 25 may contain titanium (Ti), copper (Cu), nickel (Ni), or gold (Au). When performing electroless plating, the material constituting the body-side layer 25 may be a material having catalytic adsorption ability or a material having plating solution resistance. For example, when performing electroless plating, the body-side layer 25 may contain silicon oxide (SiO), silicon dioxide (SiO2), siloxane (SiOR2), zinc (Zn), titanium (Ti), copper (Cu), or nickel (Ni).

[0127] As the material constituting the substrate-side layer 26, there is no particular limitation as long as it can ensure adhesion to the mask substrate 15 and can suppress erosion by the etching medium used in the substrate etching process described later. For example, the substrate-side layer 26 may contain gold (Au), aluminum (Al), chromium (Cr), nickel (Ni), titanium (Ti), titanium nitride (TiN), an aluminum alloy containing neodymium (Al-Nd), silicon oxide (SiO), or silicon dioxide (SiO2). When the substrate-side layer 26 is made of an aluminum alloy containing neodymium, an aluminum alloy in which the content of neodymium is 0.5 atomic % or more and 2 atomic % or less may be used. Here, the atomic % is obtained by performing composition analysis of the substrate-side layer 26 using the XPS method. The XPS method is a method of obtaining knowledge about the types and abundances of constituent elements in a region within a few nm from the surface of a sample as a result of measuring the energy distribution of photoelectrons emitted from the sample by irradiating the sample with X-rays. In this case, the abundance of each constituent element is proportional to the peak area value calculated by integrating the area of the peak corresponding to each constituent element in the spectrum measured by X-ray photoelectron spectroscopy. Therefore, first, the peak area value corresponding to each constituent element is calculated. Next, the total value of the peak area values of each constituent element is calculated, and then, by dividing the peak area value of the target constituent element by the total value and multiplying by 100, the atomic % of the target constituent element can be calculated. The relationship between the abundance of the constituent element and the peak area value may vary for each constituent element depending on the sensitivity to X-rays and the like. In this case, a corrected peak area value may be calculated by multiplying the peak area value of each constituent element by a relative sensitivity coefficient for correcting the sensitivity difference, and then the above-mentioned total value and atomic % may be calculated.

[0128] As the material constituting the intermediate layer 27, there is no particular limitation as long as it can ensure adhesion to the main body side layer 25 and the substrate side layer 26 and can protect the substrate side layer 26 from the plating solution used in the first metal layer forming step. The material constituting the intermediate layer 27 may be a material having a coefficient of thermal expansion between the coefficient of thermal expansion of the main body side layer 25 and the coefficient of thermal expansion of the substrate side layer 26. The material constituting the intermediate layer 27 may be a material having a surface free energy between the surface free energy of the main body side layer 25 and the surface free energy of the substrate side layer 26. For example, the intermediate layer 27 may contain titanium (Ti), titanium nitride (TiN), aluminum (Al), an aluminum alloy containing neodymium (Al-Nd), silicon monoxide (SiO), silicon dioxide (SiO2), nickel (Ni), copper (Cu), chromium (Cr), or gold (Au).

[0129] The mask layer 20 may be provided with a through hole 40. The mask layer 20 may be provided with two or more through holes 40. The through hole 40 may penetrate the mask layer 20. In the present embodiment, the through hole 40 extends from the first surface 20a to the second surface 20b and penetrates the mask layer 20. In this case, the through hole 40 may penetrate the first metal layer 21 and the second metal layer 22.

[0130] The opening dimension of the through hole 40 in the predetermined direction (for example, the first direction D11 or the second direction D12 described later) on the second surface 20b may be larger than the opening dimension of the through hole 40 in the predetermined direction on the first surface 20a. In one embodiment, the cross-sectional opening of the through hole 40 in the direction parallel to the first surface 20a may gradually increase from the first surface 20a toward the second surface 20b. In other words, the cross-sectional area of each through hole 40 in the cross-section parallel to the first surface 20a at each position along the normal direction of the mask layer 20 may gradually increase from the first surface 20a toward the second surface 20b. In this case, the through hole 40 may have a wall surface 41 formed so as to move away from the central axis CL of the through hole 40 from the first surface 20a toward the second surface 20b. In FIG. 3, an example is shown in which the wall surface 41 of the through hole 40 linearly inclines with respect to the central axis CL so as to move away from the central axis CL from the first surface 20a toward the second surface 20b.

[0131] As shown in FIGS. 2 and 4, the through holes 40 may form two or more through hole groups 30. Each through hole group 30 is located within the substrate opening 16 of the mask substrate 15 in a plan view. That is, the through hole group 30 (or the effective region 23 described later) may be located in the substrate opening 16, or a plurality of through hole groups 30 (or a plurality of effective regions 23) may be located. Furthermore, all the through hole groups 30 may be located within one substrate opening 16. As shown in FIG. 4, each through hole group 30 may be configured such that two or more through holes 40 form a group. The through hole group 30 is used as a term meaning an aggregate of a plurality of regularly arranged through holes 40. The through hole 40 at the outer edge constituting one through hole group 30 is the through hole 40 located at the outermost side among the plurality of regularly arranged through holes 40. There may be no through holes 40 that are similarly regularly arranged and intended for the passage of the vapor deposition material 82 outside the through hole 40 located at the outermost side in one through hole group 30.

[0132] As shown in FIGS. 2 and 4, mask bars 28a and 28b may be provided between adjacent groups of through-holes 30. Through-holes 40 intended for the passage of the vapor deposition material 82 may not be arranged in the mask bars 28a and 28b. The mask bars 28a and 28b may include a first mask bar 28a and a second mask bar 28b extending in directions orthogonal to each other. The first mask bar 28a may extend in the second direction D12, and the second mask bar 28b may extend in the first direction D11. A plurality of first mask bars 28a may be arranged in the first direction D11. A plurality of second mask bars 28b may be arranged in the second direction D12. The first mask bar 28a and the second mask bar 28b intersect at an intersection 29. Through-holes or recesses (both not shown) for other uses may be arranged in the mask bars 28a and 28b. These through-holes or recesses for other uses may be arranged without the regularity of the arrangement of the through-holes 40 and may be considered not to belong to the group of through-holes 30. The mask bars 28a and 28b may form part of the surrounding area 24 described later.

[0133] As shown in FIG. 4, a plurality of groups of through-holes 30 may be arranged at a predetermined interval (at a predetermined pitch). The groups of through-holes 30 may be arranged at a predetermined interval in the first direction D11 and at a predetermined interval in the second direction D12. The groups of through-holes 30 may be arranged via the first mask bar 28a in the first direction D11 and via the second mask bar 28b in the second direction D12. The arrangement pitch of the groups of through-holes 30 may be different in the first direction D11 and the second direction D12, or may be equal. FIG. 4 shows an example in which the arrangement pitch in the first direction D11 is equal to the arrangement pitch in the second direction D12. As shown in FIG. 4, the groups of through-holes 30 may be arranged in parallel. That is, each group of through-holes 30 constituting one row along the first direction D11 and each group of through-holes 30 constituting another row adjacent to the row in the second direction D12 may be aligned in the second direction D12.

[0134] In FIG. 4, the distance between the through-hole groups 30 adjacent to each other in the first direction D11 is indicated by C1. The distance C1 corresponds to the width of the first mask bar 28a. Also, the distance between the through-hole groups 30 adjacent to each other in the second direction D12 is indicated by C2. The distance C2 corresponds to the width of the second mask bar 28b. The distance C1 and the distance C2 may be different, but in the example shown in FIG. 4, an example where the distance C1 and the distance C2 are equal is shown. The distances C1 and C2 may be set according to the width of a dicing saw used when cutting a deposition substrate 110 (see FIG. 15A) on which a plurality of organic devices 100 including the organic layers 130A, 130B, 130C, etc. are deposited, for each organic device 100. The cutting of the deposition substrate 110 may be performed by single sawing in which the region between the adjacent organic devices 100 is used to divide the deposition substrate 110 in one cut. Single sawing can efficiently divide the deposition substrate 110 in that the deposition substrate 110 can be divided in one cut. Single sawing may be applied when the distances C1 and C2 are relatively small. When applying single sawing, the distances C1 and C2 may be set to be equal values or close values to the width of the dicing saw. The cutting of the deposition substrate 110 may be performed by double sawing in which the region between the adjacent organic devices 100 is used to divide the deposition substrate 110 in two cuts, instead of single sawing. For example, cutting at a position along the edge of one organic device 100 and cutting at a position along the edge of the other organic device 100 are performed twice. Such double sawing may be applied when the distances C1 and C2 are relatively large or when the width of the dicing saw is relatively small. When applying double sawing, by applying a double sawing with a small width, the cutting time of the deposition substrate 110 can be shortened.

[0135] The distances C1 and C2 may be, for example, 30 μm or more, 50 μm or more, 100 μm or more, or 150 μm or more. By setting the distances C1 and C2 to 30 μm or more, it is possible to secure a cutting width for cutting the vapor deposition substrate 110 by single sawing using a dicing saw, and the strength of the vapor deposition mask 10 can be improved. Also, the distances C1 and C2 may be, for example, 240 μm or less, 260 μm or less, 280 μm or less, or 300 μm or less. By setting the distances C1 and C2 to 300 μm or less, the surface attachment efficiency to the vapor deposition substrate 110 can be improved. The range of the distances C1 and C2 may be determined by a first group consisting of 30 μm, 50 μm, 100 μm, and 150 μm, and / or a second group consisting of 240 μm, 260 μm, 280 μm, and 300 μm. The range of the distances C1 and C2 may be determined by a combination of any one of the values included in the above-described first group and any one of the values included in the above-described second group. The range of the distances C1 and C2 may be determined by a combination of any two of the values included in the above-described first group. The range of the distances C1 and C2 may be determined by a combination of any two of the values included in the above-described second group.For example, it may be 30 μm or more and 300 μm or less, may be 30 μm or more and 280 μm or less, may be 30 μm or more and 260 μm or less, may be 30 μm or more and 240 μm or less, may be 30 μm or more and 150 μm or less, may be 30 μm or more and 100 μm or less, may be 30 μm or more and 50 μm or less, may be 50 μm or more and 300 μm or less, may be 50 μm or more and 280 μm or less, may be 50 μm or more and 260 μm or less, may be 50 μm or more and 240 μm or less, may be 50 μm or more and 150 μm or less, may be 50 μm or more and 100 μm or less, may be 100 μm or more and 300 μm or less, may be 100 μm or more and 280 μm or less, may be 100 μm or more and 260 μm or less, may be 100 μm or more and 240 μm or less, may be 100 μm or more and 150 μm or less, may be 150 μm or more and 300 μm or less, may be 150 μm or more and 280 μm or less, may be 150 μm or more and 260 μm or less, may be 150 μm or more and 240 μm or less, may be 240 μm or more and 300 μm or less, may be 240 μm or more and 280 μm or less, may be 240 μm or more and 260 μm or less, may be 260 μm or more and 300 μm or less, may be 260 μm or more and 280 μm or less, may be 280 μm or more and 300 μm or less.

[0136] As shown in FIGS. 4 and 5A, in one through-hole group 30, a plurality of through-holes 40 may be arranged at a predetermined interval or at a predetermined pitch. The through-holes 40 may be arranged at a predetermined pitch (reference numeral C3 shown in FIG. 5A) in the first direction D11 and may also be arranged at a predetermined pitch (reference numeral C4 shown in FIG. 5A) in the second direction D12. The arrangement pitches C3 and C4 of the through-holes 40 may be different in the first direction D11 and the second direction D12, or may be equal. FIG. 5A shows an example in which the arrangement pitch C3 in the first direction D11 is equal to the arrangement pitch C4 in the second direction D12. As shown in FIG. 5A, the through-holes 40 may be arranged in parallel. That is, each through-hole 40 constituting one column along the first direction D11 and each through-hole 40 constituting another column adjacent to the column in the second direction D12 may be aligned in the second direction D12. The arrangement pitches C3 and C4 of the through-holes 40 may be determined as follows, for example, according to the pixel density of the display device or the projection device. · When the pixel density is 600 ppi or more: The pitch is 42.3 μm or less · When the pixel density is 1200 ppi or more: The pitch is 21.2 μm or less · When the pixel density is 3000 ppi or more: The pitch is 8.5 μm or less · When the pixel density is 5000 ppi or more: The pitch is 5.1 μm or less A display device or a projection device with a pixel density of 600 ppi may be used to display images or videos at a distance of about 15 cm from the eye, and may be used, for example, in a smartphone. A display device or a projection device with a pixel density of 1200 ppi may be used to display images or videos at a distance of about 8 cm from the eye, and may be used, for example, to display or project images or videos for expressing virtual reality (so-called VR). A display device or a projection device with a pixel density of 3000 ppi may be used to display images or videos at a distance of about 3 cm from the eye, and may be used, for example, to display or project images or videos for expressing augmented reality (so-called AR). A display device or a projection device with a pixel density of 5000 ppi may be used to display images or videos at a distance of about 2 cm from the eye, and may be used, for example, to display or project images or videos for expressing augmented reality.

[0137] The through holes 40 in one group of through holes 30 may be arranged in a staggered pattern, rather than in a parallel arrangement, as shown in FIG. 5B. That is, each through hole 40 constituting one row along the first direction D11 and each through hole 40 constituting another row adjacent to the row in the second direction D12 may not be aligned in the second direction D12. In the example shown in FIG. 5B, each through hole 40 constituting one row and each through hole 40 constituting an adjacent other row are arranged offset in the first direction D11, and the offset amount is half of the arrangement pitch C3 in the first direction. However, the present disclosure is not limited to this, and the above offset amount is not limited to being half of the arrangement pitch C3. Further, in FIG. 5B, an example is shown in which two rows of adjacent through holes 40 are arranged offset in the first direction D11, but two rows of adjacent through holes 40 may be arranged offset in the second direction D12 in the first direction D11.

[0138] As shown in FIG. 5A, the through-hole 40 may have a substantially rectangular outline in a plan view. In this case, the four corners of the outline of the through-hole 40 may be curved. The shape of the outline can be arbitrarily determined according to the shape of the pixel. For example, it may have the shape of other polygons such as a hexagon or an octagon, or it may have a circular shape. Further, the shape of the outline may be a combination of a plurality of shapes. Also, the through-holes 40 may each have a different outline shape. The opening dimension of the through-hole 40 in the first direction D11 may be the dimension between two intersection points where a straight line (corresponding to the first intermediate straight line ML1 described later in FIG. 5A) extending in the first direction D11 through the center point O of the opening intersects the outline of the opening. The opening dimension of the through-hole 40 in the second direction D12 may be the dimension between two intersection points where a straight line (corresponding to the second intermediate straight line ML2 described later in FIG. 5A) extending in the second direction D12 through the center point O of the opening intersects the outline of the opening. The center point O of the opening of the through-hole 40 on the first surface 20a and the second surface 20b may be the intersection point of the first intermediate straight line ML1 and the second intermediate straight line ML2. The first intermediate straight line ML1 may be a straight line extending in the first direction D11 and located at an equal distance from two straight lines circumscribing the outline of the opening. The second intermediate straight line ML2 may be a straight line extending in the second direction D12 and located at an equal distance from two straight lines circumscribing the outline of the opening. When the through-hole 40 has a polygonal outline having an even number of vertices, the opening dimension of the through-hole 40 may be the interval between a pair of opposing sides in the polygon, as shown in FIG. 5A.

[0139] In FIG. 5A, the opening dimension of the through-hole 40 on the first surface 20a of the mask layer 20 is indicated by the symbol S1. Also, the opening dimension of the through-hole 40 on the second surface 20b of the mask layer 20 is indicated by the symbol S2. The opening dimension S2 is larger than the opening dimension S1. In FIG. 5A, since the planar shape of the through-hole 40 is a square, the opening dimension of the through-hole 40 in the first direction D11 is equal to the opening dimension of the through-hole 40 in the second direction D12. Typically, the dimensions of the through-hole 40 in the second direction D12 are indicated by the symbols S1 and S2. The symbol S3 indicates the distance between adjacent through-holes 40 on the first surface 20a.

[0140] The dimension S1, the dimension S2, and the dimension S3 may be determined as shown in Table 1 below, for example, according to the pixel density of the display device or the projection device. [Table 1]

[0141] As shown in FIG. 3, the wall surface 41 of the through hole 40 described above may be inclined at an angle θ1 with respect to the first surface 20a of the mask layer 20.

[0142] The angle θ1 may be, for example, 60° or more, 65° or more, 70° or more, or 75° or more. By setting the angle θ1 to 60° or more, as will be described later, the arrangement pitches C3 and C4 of the through holes 40 can be reduced. Also, the angle θ1 may be, for example, 80° or less, 83° or less, 85° or less, or 90° or less. By setting the angle θ1 to 90° or less, the generation of shadows can be suppressed. The range of the angle θ1 may be defined by a first group consisting of 60°, 65°, 70°, and 75°, and / or a second group consisting of 80°, 83°, 85°, and 90°. The range of the angle θ1 may be defined by a combination of any one value included in the above-described first group and any one value included in the above-described second group. The range of the angle θ1 may be defined by a combination of any two values included in the above-described first group. The range of the angle θ1 may be defined by a combination of any two values included in the above-described second group. For example, it may be 60° or more and 90° or less, 60° or more and 85° or less, 60° or more and 83° or less, 60° or more and 80° or less, 60° or more and 75° or less, 60° or more and 70° or less, 60° or more and 65° or less, 65° or more and 90° or less, 65° or more and 85° or less, 65° or more and 83° or less, 65° or more and 80° or less, 65° or more and 75° or less, 65° or more and 70° or less, 70° or more and 90° or less, 70° or more and 85° or less, 70° or more and 83° or less, 70° or more and 80° or less, 70° or more and 75° or less, 75° or more and 90° or less, 75° or more and 85° or less, 75° or more and 83° or less, 75° or more and 80° or less, 80° or more and 90° or less, 80° or more and 85° or less, 80° or more and 83° or less, 83° or more and 90° or less, 83° or more and 85° or less, or 85° or more and 90° or less.

[0143] Next, the technical meaning of the angle θ1 will be described. The flying direction component of the vapor deposition material 82 in the vapor deposition process of vapor depositing the vapor deposition material 82 on the vapor deposition substrate 110 using the vapor deposition mask 10 will be described. Depending on the configuration of the crucible 81 shown in FIG. 1, in addition to the component in which the vapor deposition material 82 flies from the vapor deposition source (crucible 81) toward the vapor deposition substrate 110 along the thickness direction D2 of the vapor deposition mask 10, there may be a component that flies along a direction inclined with respect to the thickness direction D2 of the vapor deposition mask 10. In this case, a part of the vapor deposition material 82 flying along the inclined direction adheres to the second surface 20b of the mask layer 20 or the wall surface 41 of the through hole 40 before reaching the vapor deposition substrate 110. For this reason, the thickness of the vapor deposition layer (or the organic layers 130A, 130B, 130C described later) formed on the vapor deposition substrate 110 tends to be thinner as it is closer to the wall surface 41 of the through hole 40. Such a phenomenon in which the adhesion of the vapor deposition material 82 to the vapor deposition substrate 110 is inhibited by the wall surface 41 of the through hole 40 is also referred to as a shadow. As a measure for suppressing the occurrence of the shadow, it is conceivable to reduce the above-described angle θ1 and to reduce the thickness H2 of the mask layer 20.

[0144] Reducing the angle θ1 means that the opening of the through hole 40 on the second surface 20b becomes larger. In this case, the wall surfaces 41 of the through holes 40 adjacent to each other on the second surface 20b are connected, and the second surface 20b does not exist between these through holes 40. That is, the material between the through holes 40 adjacent to each other on the second surface 20b is removed by laser light irradiation during the through hole forming process described later. For this reason, the angle θ1 does not have to be made too small. In this case, while ensuring the mechanical strength of the mask layer 20, the arrangement pitches C3 and C4 of the through holes 40 can be reduced.

[0145] When suppressing excessive reduction of the angle θ1, the thickness H2 of the mask layer 20 may be reduced. By this, the occurrence of the shadow can be suppressed. However, simply reducing the thickness H2 means a decrease in the mechanical strength of the mask layer 20. For this reason, the thickness H2 does not have to be made too small. In this case, the mechanical strength of the mask layer 20 can be ensured.

[0146] Therefore, in the present embodiment, the angle θ1 is relatively large, for example, 60° or more. This angle θ1 is larger than that of a conventional vapor deposition mask which is, for example, 50° or less. For this reason, the wall surface 41 of the through hole 40 can be formed in a shape nearly perpendicular to the first surface 20a and the second surface 20b of the mask layer 20, and the material of the mask layer 20 can remain around the through hole 40. Accordingly, the mechanical strength of the mask layer 20 can be improved. Also, by increasing the angle θ1, the arrangement pitches C3 and C4 of the through holes 40 can be decreased.

[0147] As described above, the angle θ1 of the vapor deposition mask 10 according to the present embodiment is 60° or more and 90° or less. For this reason, the vapor deposition mask 10 according to the present embodiment may be used in a vapor deposition apparatus 80 having a crucible 81 with a vapor deposition angle (for example, 60° or more and 90° or less) of 90° or close to 90°, or may be used in a surface vapor deposition type vapor deposition apparatus (not shown). In the vapor deposition apparatus 80 having the crucible 81 as shown in FIG. 1, the vapor deposition material 82 may include components flying along a direction inclined with respect to the thickness direction D2. On the other hand, in a surface vapor deposition type vapor deposition apparatus, a vapor deposition source disposed below the vapor deposition substrate 110 has an extent on a plane so as to face the vapor deposition mask 10. As a result, the vapor deposition material 82 can fly to the vapor deposition substrate 110 along the thickness direction D2. For this reason, the vapor deposition material 82 can fly evenly in each of the first direction D11 and the second direction D12. The vapor deposition angle becomes 90° or close to 90°.

[0148] Incidentally, one group of through holes 30 may be referred to as one effective region 23. A region located around the effective region 23 may be referred to as a peripheral region 24. In this case, the peripheral region 24 surrounds a plurality of effective regions 23.

[0149] When manufacturing a display device such as an organic device 100 (described later) using the vapor deposition mask 10, one effective region 23 corresponds to the display region of one organic device 100. Therefore, according to the vapor deposition mask 10 shown in FIG. 2, a plurality of organic devices 100 can be vapor-deposited on one vapor deposition substrate 110. Such vapor deposition is also referred to as multi-faceted vapor deposition. In some cases, one effective region 23 may correspond to the display regions of a plurality of organic devices 100.

[0150] The effective region 23 may have a substantially rectangular contour in plan view, for example, as shown in FIG. 4. The contour of the effective region 23 may be defined by a line that contacts the outermost through-hole 40 among the corresponding through-hole groups 30 from the outside. More specifically, the contour of the effective region 23 may be defined by a line that contacts the opening of the through-hole 40. In the example shown in FIG. 4, since the through-holes 40 are arranged in parallel, the contour of the effective region 23 is a substantially rectangular contour. Although not shown, each effective region 23 may have various shaped contours according to the shape of the display region of the organic device 100. For example, each effective region 23 may have a circular contour.

[0151] Also, as shown in FIGS. 2 and 3, the mask substrate 15 may be provided with a first alignment mark 45 for aligning with the vapor deposition substrate 110. The first alignment mark 45 can be arranged at any position as long as the through hole 40 of the vapor deposition mask 10 and the vapor deposition substrate 110 can be aligned. For example, as shown in FIGS. 2 and 3, the first alignment mark 45 may be formed on the substrate frame 17 of the second substrate surface 15b of the mask substrate 15. When the vapor deposition substrate 110 has light transmissivity meaning the property of transmitting visible light, the first alignment mark 45 provided on the mask substrate 15 through the vapor deposition substrate 110 can be visually recognized, and the vapor deposition substrate 110 and the through hole 40 of the vapor deposition mask 10 can be easily aligned. When the vapor deposition substrate 110 does not have light transmissivity, for example, infrared rays may be irradiated through the vapor deposition substrate 110 to visually recognize the first alignment mark 45. In FIG. 2, an example in which the planar shape of the first alignment mark 45 is circular is shown, but it is not limited thereto, and it may be any shape such as a rectangular shape or a cross shape. Further, the first alignment mark 45 may be formed in a concave shape by etching the second substrate surface 15b of the mask substrate 15 in the substrate etching step described later.

[0152] Also, as shown in FIGS. 3 and 4, a second alignment mark 46 for aligning with the vapor deposition substrate 110 may be provided on the first surface 20a of the mask layer 20. The second alignment mark 46 can be disposed at any position as long as the through hole 40 of the vapor deposition mask 10 and the vapor deposition substrate 110 can be aligned. For example, the second alignment mark 46 may be disposed at a position closer to the through hole 40 than the first alignment mark 45. For example, as shown in FIGS. 3 and 4, the second alignment mark 46 may be formed within the substrate opening 16 of the mask substrate 15 in the first surface 20a of the mask layer 20 in a plan view. For example, the second alignment mark 46 may be located on the mask bars 28a and 28b formed between the adjacent through hole groups 30. For example, the second alignment mark 46 may be located at the intersection 29 where the first mask bar 28a and the second mask bar 28b intersect. In FIG. 4, the second alignment mark 46 is provided at each intersection 29 where each first mask bar 28a and each second mask bar 28b intersect. In other words, the second alignment mark 46 is disposed on each first mask bar 28a and the second alignment mark 46 is disposed on each second mask bar 28b. In this case, the second alignment mark 46 is disposed at a position corresponding to each corner of each through hole group 30.

[0153] When the vapor deposition substrate 110 has light transmissibility with respect to visible light, the second alignment mark 46 provided on the mask layer 20 can be visually recognized through the vapor deposition substrate 110, and the vapor deposition substrate 110 and the through hole 40 of the vapor deposition mask 10 can be easily aligned. When the vapor deposition substrate 110 does not have light transmissibility, for example, infrared rays may be irradiated through the vapor deposition substrate 110 to visually recognize the second alignment mark 46. In FIG. 4, the planar shape of the second alignment mark 46 is shown as an example of a circular shape, but it is not limited thereto, and it can be formed in any shape such as a rectangular shape or a cross shape. Further, the second alignment mark 46 may be formed in a concave shape, for example, by irradiating laser light onto the first surface 20a of the first metal layer 21. However, the present disclosure is not limited to this, and the second alignment mark 46 may be formed in a concave shape, for example, by etching the first surface 20a of the first metal layer 21. Alternatively, the second alignment mark 46 may be formed such that the first metal layer 21 has the second alignment mark 46, for example, by plating treatment in the first metal layer forming step. In this case, in a state where a resist (not shown) is formed at a position corresponding to the second alignment mark 46 on the surface of the second metal layer 22 opposite to the mask substrate 15, the first metal layer 21 may be formed by plating treatment. Thereby, the second alignment mark 46 penetrating the first metal layer 21 can be formed.

[0154] Next, a method for manufacturing the vapor deposition mask 10 having such a configuration will be described with reference to FIGS. 6 to 14. Here, an example in which the mask substrate 15 is a silicon substrate will be described. The method for manufacturing the vapor deposition mask 10 according to the present embodiment may include a substrate preparation step, a mask layer formation step, a substrate opening formation step, and a through hole formation step. In FIGS. 13 and 14, in order to make the drawings easier to understand, the number of through holes 40 is made smaller than in FIG. 3.

[0155] First, as shown in FIG. 6, as a substrate preparation step, a mask substrate 15 having a first substrate surface 15a and a second substrate surface 15b may be prepared. For example, as the mask substrate 15, a silicon wafer with a plane orientation of (110) whose first substrate surface 15a and second substrate surface 15b are polished to a mirror finish may be used.

[0156] After the substrate preparation step, as a mask layer formation step, a mask layer 20 having a first surface 20a and a second surface 20b may be formed on the mask substrate 15. The second surface 20b of the mask layer 20 faces the mask substrate 15 and adheres to the first substrate surface 15a of the mask substrate 15. In the mask layer formation step according to the present embodiment, first, a second metal layer formation step of forming the second metal layer 22 is performed, and then, a first metal layer formation step of forming the first metal layer 21 is performed. The first metal layer formation step is an example of a mask main body layer formation step, and the second metal layer formation step is an example of a mask intermediate layer formation step.

[0157] In the second metal layer formation step, as shown in FIG. 7, the second metal layer 22 is formed on the first substrate surface 15a of the mask substrate 15. More specifically, a second metal layer 22 including a main body side layer 25, a substrate side layer 26, and an intermediate layer 27 is formed on the mask substrate 15.

[0158] First, the substrate side layer 26 is formed. The substrate side layer 26 may be formed over the entire first substrate surface 15a of the mask substrate 15. The substrate side layer 26 may be formed, for example, by a sputtering process using a sputtering target made of the material of the substrate side layer 26. The formed substrate side layer 26 adheres to the mask substrate 15.

[0159] Subsequently, the intermediate layer 27 is formed on the substrate side layer 26. The intermediate layer 27 may be formed over the entire surface of the substrate side layer 26. The intermediate layer 27 may be formed, for example, by a sputtering process using a sputtering target made of the material of the intermediate layer 27 (for example, titanium). The formed intermediate layer 27 adheres to the substrate side layer 26.

[0160] Next, the main body side layer 25 is formed on the intermediate layer 27. The main body side layer 25 may be formed over the entire surface of the intermediate layer 27. The main body side layer 25 may be formed, for example, by a sputtering process using a sputtering target made of the material of the main body side layer 25 (for example, copper). The formed main body side layer 25 adheres to the intermediate layer 27.

[0161] In this way, the second metal layer 22 including the main body side layer 25, the substrate side layer 26, and the intermediate layer 27 adheres to the mask substrate 15.

[0162] In the first metal layer forming step, as shown in FIG. 8, the first metal layer 21 is formed on the surface of the second metal layer 22 opposite to the mask substrate 15. More specifically, the first metal layer 21 is formed on the main body side layer 25. The first metal layer 21 may be formed, for example, by a plating process. Here, the first metal layer 21 is formed by an electrolytic plating process using the second metal layer 22 as a power supply electrode. More specifically, a plating solution is supplied to the surface of the main body side layer 25 opposite to the mask substrate 15. For example, the mask substrate 15 on which the second metal layer 22 is formed is immersed in a plating bath filled with the plating solution. The main body side layer 25 of the second metal layer 22 described above functions as a power supply electrode for plating. As a result, the components of the plating solution are deposited on the surface of the main body side layer 25 opposite to the mask substrate 15, and the first metal layer 21 is formed. The first metal layer 21 may be formed over the entire surface of the main body side layer 25 opposite to the mask substrate 15. In this way, the first metal layer 21 adheres to the main body side layer 25.

[0163] The components of the plating solution to be used are appropriately determined according to the characteristics required for the first metal layer 21. For example, when the first metal layer 21 is composed of an iron alloy containing nickel, a mixed solution of a solution containing a nickel compound and a solution containing an iron compound may be used as the plating solution. For example, a mixed solution of a solution containing nickel sulfamate or nickel bromide and a solution containing ferrous sulfamate may be used. Also, for example, when the first metal layer 21 is composed of nickel, a solution containing a nickel compound may be used as the plating solution. For example, a nickel sulfamate solution may be used. Further, when the first metal layer 21 is composed of a nickel alloy containing cobalt, a mixed solution of a solution containing a nickel compound and a solution containing a cobalt compound may be used as the plating solution. For example, a cobalt sulfamate solution may be used. Various additives may be contained in each of the above-described plating solutions. As the additives, for example, pH buffers such as boric acid, and additives such as malonic acid and saccharin may be contained.

[0164] After the first metal layer 21 is formed, the first metal layer 21 may be annealed (fired). By this, the first metal layer 21 formed by the plating process can be recrystallized, and the coefficient of thermal expansion of the first metal layer 21 can be decreased. That is, generally, even if a rolled material produced by a rolling process and a plated material produced by a plating process have the same material components, the coefficient of thermal expansion of the plated material tends to be higher than that of the rolled material. Therefore, the first metal layer 21 may be recrystallized to reduce the coefficient of thermal expansion of the first metal layer 21. At the time of such an annealing process, for example, the first metal layer 21 may be heated at a temperature of 600°C for 5 minutes.

[0165] In the first metal layer forming step, as long as the first metal layer 21 can be formed, the specific method of the plating process is not particularly limited. For example, instead of the electrolytic plating process, electroless plating process may be performed. When performing the electroless plating process, since there is no electrode as in the case of the electrolytic plating process, the thickness of the first metal layer 21 formed by the electroless plating process can be made uniform. When performing the electroless plating process, a catalyst layer (not shown) may be provided on the surface of the second metal layer 22 opposite to the mask substrate 15. Even when the electrolytic plating process is performed, a similar catalyst layer may be provided on the second metal layer 22.

[0166] After the mask layer forming step, as the substrate opening forming step, a substrate opening 16 exposing the second surface 20b of the mask layer 20 may be formed in the mask substrate 15. In the substrate opening forming step according to the present embodiment, the resist layer forming step, the substrate etching step, and the resist layer removing step are performed in this order.

[0167] In the resist layer forming step, as shown in FIG. 9, a resist layer 50 is formed on the second substrate surface 15b of the mask substrate 15. The resist layer 50 has a resist opening 51 corresponding to the substrate opening 16. More specifically, first, a liquid resist is applied to the second substrate surface 15b of the mask substrate 15 by a spinner and dried and cured to form the resist layer 50. The resist layer 50 may be formed over the entire second substrate surface 15b. Subsequently, the resist layer 50 is patterned by photolithography. For example, when the resist layer 50 is a negative resist, an exposure mask (not shown) that does not irradiate light to the portion corresponding to the resist opening 51 in the resist layer 50 is disposed on the resist layer 50. Thereafter, the resist layer 50 is exposed through this exposure mask. Then, the exposed resist layer 50 is developed, and the unexposed portion of the resist layer 50 is removed to form the resist opening 51. After development, the resist layer 50 may be heated to improve the adhesion of the resist layer 50 to the mask substrate 15. As the negative resist, for example, a novolak-based resist may be used. As the resist layer 50, a positive resist may be used. Also, a dry film resist may be attached to the mask substrate 15 as the resist layer 50.

[0168] The thickness H8 of the resist layer 50 may be, for example, 0.1 μm or more, 0.5 μm or more, 1.0 μm or more, or 1.5 μm or more. By setting the thickness H8 to 0.1 μm or more, it is possible to suppress the etching of the portion covered by the resist layer 50 in the substrate etching process described later. Also, the thickness H8 may be, for example, 20.0 μm or less, 30.0 μm or less, 40.0 μm or less, or 50.0 μm or less. By setting the thickness H8 to 50.0 μm or less, in the case of a dry film resist, availability can be ensured, and in the case of a liquid resist, the resist layer 50 can be formed efficiently. The range of the thickness H8 may be defined by a first group consisting of 0.1 μm, 0.5 μm, 1.0 μm, and 1.5 μm, and / or a second group consisting of 20.0 μm, 30.0 μm, 40.0 μm, and 50.0 μm. The range of the thickness H8 may be defined by a combination of any one of the values included in the above-described first group and any one of the values included in the above-described second group. The range of the thickness H8 may be defined by a combination of any two of the values included in the above-described first group. The range of the thickness H8 may be defined by a combination of any two of the values included in the above-described second group.For example, it may be 0.1 μm or more and 50.0 μm or less, may be 0.1 μm or more and 40.0 μm or less, may be 0.1 μm or more and 30.0 μm or less, may be 0.1 μm or more and 20.0 μm or less, may be 0.1 μm or more and 1.5 μm or less, may be 0.1 μm or more and 1.0 μm or less, may be 0.1 μm or more and 0.5 μm or less, may be 0.5 μm or more and 50.0 μm or less, may be 0.5 μm or more and 40.0 μm or less, may be 0.5 μm or more and 30.0 μm or less, may be 0.5 μm or more and 20.0 μm or less, may be 0.5 μm or more and 1.5 μm or less, may be 0.5 μm or more and 1.0 μm or less, may be 1.0 μm or more and 50.0 μm or less, may be 1.0 μm or more and 40.0 μm or less, may be 1.0 μm or more and 30.0 μm or less, may be 1.0 μm or more and 20.0 μm or less, may be 1.0 μm or more and 1.5 μm or less, may be 1.5 μm or more and 50.0 μm or less, may be 1.5 μm or more and 40.0 μm or less, may be 1.5 μm or more and 30.0 μm or less, may be 1.5 μm or more and 20.0 μm or less, may be 20.0 μm or more and 50.0 μm or less, may be 20.0 μm or more and 40.0 μm or less, may be 20.0 μm or more and 30.0 μm or less, may be 30.0 μm or more and 50.0 μm or less, may be 30.0 μm or more and 40.0 μm or less, may be 40.0 μm or more and 50.0 μm or less.

[0169] Alternatively, the thickness H8 of the resist layer 50 may be, for example, 0.1 μm or more, 0.2 μm or more, 0.3 μm or more, or 0.4 μm or more. By setting the thickness H8 to 0.1 μm or more, it is possible to suppress the etching of the portion covered by the resist layer 50 in the substrate etching process described later. Also, H8 may be, for example, 0.6 μm or less, 0.7 μm or less, 0.8 μm or less, or 0.9 μm or less. By setting the thickness H8 to 0.9 μm or less, in the case of a dry film resist, the availability can be further ensured, and in the case of a liquid resist, the resist layer 50 can be formed more efficiently. The range of H8 may be determined by a first group consisting of 0.1 μm, 0.2 μm, 0.3 μm, and 0.4 μm, and / or a second group consisting of 0.6 μm, 0.7 μm, 0.8 μm, and 0.9 μm. The range of H8 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of H8 may be determined by a combination of any two of the values included in the first group described above. The range of H8 may be determined by a combination of any two of the values included in the second group described above.For example, it may be 0.1 μm or more and 0.9 μm or less, may be 0.1 μm or more and 0.8 μm or less, may be 0.1 μm or more and 0.7 μm or less, may be 0.1 μm or more and 0.6 μm or less, may be 0.1 μm or more and 0.4 μm or less, may be 0.1 μm or more and 0.3 μm or less, may be 0.1 μm or more and 0.2 μm or less, may be 0.2 μm or more and 0.9 μm or less, may be 0.2 μm or more and 0.8 μm or less, may be 0.2 μm or more and 0.7 μm or less, may be 0.2 μm or more and 0.6 μm or less, may be 0.2 μm or more and 0.4 μm or less, may be 0.2 μm or more and 0.3 μm or less, may be 0.3 μm or more and 0.9 μm or less, may be 0.3 μm or more and 0.8 μm or less, may be 0.3 μm or more and 0.7 μm or less, may be 0.3 μm or more and 0.6 μm or less, may be 0.3 μm or more and 0.4 μm or less, may be 0.4 μm or more and 0.9 μm or less, may be 0.4 μm or more and 0.8 μm or less, may be 0.4 μm or more and 0.7 μm or less, may be 0.4 μm or more and 0.6 μm or less, may be 0.6 μm or more and 0.9 μm or less, may be 0.6 μm or more and 0.8 μm or less, may be 0.6 μm or more and 0.7 μm or less, may be 0.7 μm or more and 0.9 μm or less, may be 0.7 μm or more and 0.8 μm or less, may be 0.8 μm or more and 0.9 μm or less.

[0170] In the substrate etching process, as shown in FIG. 10, the mask substrate 15 is etched through the resist opening 51 to form a substrate opening 16. As a result, a part of the second surface 20b of the mask layer 20 is exposed in the substrate opening 16. The etching process of the mask substrate 15 may be a dry etching process using an etching gas. The etching gas is an example of an etching medium. In this case, for example, the mask substrate 15 may be etched by using an etching gas such as DEEP-RIE, ICP (Inductively Coupled Plasma), SF6 gas, CF-based gas, or chlorine-based gas. When performing the dry etching process, the etching rate can be increased, and the wall surface of the substrate opening 16 can be formed substantially perpendicular to the first substrate surface 15a. When the substrate-side layer 26 is formed of a material that can suppress erosion by the etching medium, it functions as a stopper layer for stopping the etching. The etching of the mask substrate 15 may be a wet etching process using an etching solution. The etching solution is an example of an etching medium. For example, the mask substrate 15 may be immersed in an 80° C. aqueous solution of 35 wt % potassium hydroxide as the etching solution for a predetermined time. The portion of the mask substrate 15 exposed from the resist layer 50 may be anisotropically etched so as to depend on the plane orientation (or crystal orientation).

[0171] The substrate etching process will be described in more detail. Here, an example of forming the substrate opening 16 shown in FIG. 3 by so-called deep trench RIE (deep trench reactive ion etching) will be described with reference to FIGS. 11A to 11E. FIGS. 11A to 11E show partially enlarged cross-sections schematically showing the substrate opening 16 shown in FIG. 3.

[0172] First, as shown in FIG. 11A, the portion of the resist layer 50 exposed by the resist opening 51 is anisotropically etched. As a result, a first recess 16a1 is formed in the second substrate surface 15b. The first recess 16a1 includes a wall surface 16b1 extending from the resist opening 51 toward the first substrate surface 15a and an end surface 16c1. The wall surface 16b1 is formed so as to widen toward the first substrate surface 15a. That is, as shown in FIG. 11A, the angle θ2 formed between the wall surface 16b1 and the first substrate surface 15a can be slightly larger than 90°.

[0173] In anisotropic dry etching, inside a deposition chamber (not shown) in which the mask substrate 15 is disposed, plasma of an etching gas is generated and the plasma is irradiated onto the second substrate surface 15b of the mask substrate 15. As the etching gas for generating the plasma, the above-described etching gas may be used. The etching proceeds not only in the thickness direction of the mask substrate 15 but also slightly in the direction along the second substrate surface 15b. However, by setting the etching time short, the progress of the etching in the direction along the second substrate surface 15b can be suppressed.

[0174] After the first recess 16a1 is formed, as shown in FIG. 11B, a first protective layer 16d1 is formed on the wall surface 16b1 and the end surface 16c1 of the first recess 16a1. This first protective layer 16d1 is formed on the wall surface 16b1 and the end surface 16c1 by supplying a source gas such as C4F8 gas into the first recess 16a1.

[0175] After the first protective layer 16d1 is formed, as shown in FIG. 11C, the first recess 16a1 is anisotropically etched. As a result, the portion of the first protective layer 16d1 located at the end face 16c1 is removed, and a second recess 16a2 is formed. More specifically, anisotropic etching is performed on the end face 16c1 of the first recess 16a1 in the same manner as the step of forming the first recess 16a1, and a second recess 16a2 connected to the first recess 16a1 is formed. At this time, similar to the wall surface 16b1 of the first recess 16a1 described above, the wall surface 16b2 of the second recess 16a2 is also formed so as to spread toward the first substrate surface 15a.

[0176] The first protective layer 16d1 formed on the wall surface 16b1 of the first recess 16a1 may or may not be removed by the anisotropic etching for forming the second recess 16a2. Even when the first protective layer 16d1 is removed, it is possible to suppress the wall surface 16b1 of the first recess 16a1 from being eroded by etching until the first protective layer 16d1 is removed. Further, when the first protective layer 16d1 remains without being removed, it is possible to further suppress the wall surface 16b of the first recess 16a1 from being eroded by etching. Even when the first protective layer 16d1 is not removed, the first protective layer 16d1 may be partially removed by etching.

[0177] Then, as shown in FIG. 11D, a second protective layer 16d2 is formed on the wall surface 16b2 and the end face 16c2 of the second recess 16a2. The second protective layer 16d2 can be formed in the same manner as the first protective layer 16d1.

[0178] The formation of such a recess and the formation of the protective layer are repeated a number of times until the etching of the mask substrate 15 reaches the substrate-side layer 26, as shown in FIG. 11E. In FIG. 11E, for the sake of simplicity of explanation, an example is shown in which, following the second recess 16a2, a third recess 16a3 including a wall surface 16b3 and a fourth recess 16a4 including a wall surface 16b4 are formed. The fourth recess 16a4 has reached the substrate-side layer 26 that functions as an etching stopper layer. The substrate-side layer 26 according to the present embodiment is formed of a material that can suppress erosion by the etching gas. For this reason, the substrate-side layer 26 can function as an etching stopper layer and remains without being etched. A third protective layer 16d3 is formed on the wall surface 16b3, but no protective layer is formed on the wall surface 16b4.

[0179] Thereafter, the protective layers 16d1 to 16d3 remaining on the wall surfaces 16b1 to 16b3 of the respective recesses 16a1 to 16a3 are removed using a processing liquid. For the processing liquid, for example, hydrofluoroether (HFE) may be used. The protective layers 16d1 to 16d3 may be immersed in a processing liquid at room temperature (for example, about 25° C.) to 70° C. for 30 minutes. The processing liquid may be used without diluting the stock solution.

[0180] In this way, a substrate opening 16 as shown in FIG. 10 is formed in the mask substrate 15. The wall surface of the substrate opening 16 is constituted by the wall surfaces 16b1 to 16b4 of the respective recesses 16a1 to 16a4. The dry etching time for forming the recesses 16a1 to 16a4 may be shortened, and the number of times of repeating the formation of the recesses 16a1 to 16a4 and the formation of the protective film may be increased. In this case, the wall surface of the substrate opening 16 constituted by the wall surfaces 16b1 to 16b4 of the respective recesses 16a1 to 16a4 can be formed substantially perpendicular to the second substrate surface 15b. Further, minute steps may occur on the wall surfaces 16b1 to 16b4 of the adjacent recesses 16a1 to 16a4, but this step can be reduced by reducing the thickness of the above-described protective layers 16d1 to 16d3. In this case, in the cross section as shown in FIG. 10, the wall surface of the substrate opening 16 can be formed to form a straight line substantially perpendicular to the first substrate surface 15a.

[0181] In the substrate etching process, the step of forming the first alignment mark 45 shown in FIGS. 2 and 3 may be performed. That is, in the substrate etching process, the first alignment mark 45 may be formed.

[0182] In the resist layer removing process, as shown in FIG. 12, the resist layer 50 is removed from the mask substrate 15. For example, the resist layer 50 may be removed from the mask substrate 15 by using an alkaline stripping solution.

[0183] In this way, as shown in FIG. 12, a mask substrate 15 with a substrate opening 16 formed therein is obtained.

[0184] The substrate opening forming process is not limited to being performed in the above-described process. For example, in the substrate opening forming process, a resistant layer (not shown) such as a silicon oxide layer, a silicon nitride layer, or a silicon carbide layer may be formed on the second substrate surface 15b of the mask substrate 15. In this case, a resistant layer opening may be formed in the resistant layer, and then the mask substrate 15 may be etched through the resistant layer opening. The resistant layer opening may be formed by forming a resist layer having a resist opening on the resistant layer using photolithography processing and etching the resistant layer through the resist opening. Then, the mask substrate 15 may be etched through the resistant layer opening to form the substrate opening 16. After the substrate opening 16 is formed, the resistant layer may be removed.

[0185] After the substrate opening forming process, as a through-hole forming process, a plurality of through-holes 40 may be formed in the mask layer 20 so as to be exposed in the substrate opening 16. The through-holes 40 may be formed by irradiating the mask layer 20 with a laser beam L. The through-holes 40 may be formed so as to penetrate the first metal layer 21 and the opening region portion 22b.

[0186] For example, as shown in FIG. 13A, the through-holes 40 may be formed one by one by irradiating the laser beam L.

[0187] More specifically, first, as shown in FIG. 13A, the mask substrate 15 and the mask layer 20 obtained as described above are placed on the moving stage 60.

[0188] Subsequently, a large number of through holes 40 may be formed by repeating the formation of the through holes 40 and the movement of the moving stage 60. In this case, the irradiation head H may not be moved.

[0189] For example, the position where the through hole 40 is to be formed (the center of the through hole 40) is opposed to the irradiation head H. Next, the laser beam L is irradiated onto the second surface 20b of the mask layer 20 through the substrate opening 16 in the direction from the mask substrate 15 toward the first metal layer 21. As a result, the material of the portion of the mask layer 20 irradiated with the laser beam L is sublimated and removed, and as shown in FIG. 13A, the through hole 40 is formed. In FIG. 13A, the materials of the respective layers 25 to 27 of the first metal layer 21 and the second metal layer 22 constituting the mask layer 20 are removed. In this case, the wall surface 41 of the through hole 40 tends to be formed perpendicular to the second surface 20b. However, depending on the intensity and pulse width of the laser beam L and the thickness of the mask layer 20, the wall surface 41 of the through hole 40 may be inclined as shown in FIG. 13A.

[0190] The laser light L irradiated on the mask layer 20 may be femtosecond laser light. Femtosecond laser light is pulsed laser light with a short pulse width and can output high-intensity laser light with a short pulse width. Femtosecond laser light can irradiate the mask layer 20 with high-output laser light L in a short time. Therefore, the material molecules can be evaporated in a short time to form the through holes 40. In this case, it is possible to suppress the formation of burrs on the first surface 20a of the mask layer 20. Burrs are protrusions generated by processing a metal material. The output of such femtosecond laser light L may be, for example, 5 W or more and 100 W or less. The pulse width of the laser light L may be, for example, 1 fs or more and 10 ns. The wavelength of the laser light L may be, for example, 250 nm or more and 1100 nm or less, and may be, for example, 513 nm, which is a green laser. The oscillation frequency of the laser light L may be, for example, 1 Hz or more and 10 MHz or less. As an example, when the mask layer 20 with a thickness H2 of 4 μm is directly irradiated with the laser light L without using the photomask 65 described later to form one through hole 40, the pulse width of the laser light L may be 260 fs. In this case, the wavelength of the laser light L may be 513 nm. The number of irradiations of the laser light L for forming one through hole 40 may be one time, or one through hole 40 may be formed by irradiating multiple times.

[0191] After one through hole 40 is formed, the irradiation of the laser light L is stopped. Then, the moving stage 60 is moved to oppose the irradiation head H to the position (the center of the through hole 40) where the next through hole 40 is to be formed. Then, the laser light L is irradiated in the same manner as described above. By repeating this, a large number of through holes 40 are formed in the vapor deposition mask 10 according to the present embodiment.

[0192] As described above, when forming the through hole 40 by irradiating the laser light L, the irradiation head H may be moved without moving the moving stage 60.

[0193] The method of forming the through-holes 40 is not limited to this. For example, as shown in FIG. 13B, a plurality of through-holes 40 may be formed in parallel by irradiating laser light L. For example, as shown in FIGS. 13B and 13C, laser light L may be irradiated from a laser light generating device 61.

[0194] The laser light generating device 61 shown in FIG. 13C includes a laser light source 62, a first lens 63, a second lens 64 (also referred to as a collimator lens), a photomask 65, a third lens 66 (also referred to as a condenser lens), and a mirror 67. The laser light L generated from the laser light source 62 is enlarged by the first lens 63 and becomes parallel light by the second lens 64. The laser light L that has become parallel light passes through the mask hole 65a of the photomask 65 and is condensed by the third lens 66. The condensed laser light L is reflected by the mirror 67 to change its direction and is irradiated onto the second surface 20b of the mask layer 20. Although simplified in FIG. 13C, the laser light L that has passed through the photomask 65 and the third lens 66 is in a pattern-like light corresponding to the through-holes 40 as shown in FIG. 13B.

[0195] The photomask 65 has a plurality of mask holes 65a at positions corresponding to the plurality of through-holes 40. In the example shown in FIG. 13B, one corresponding through-hole 40 is formed by the laser light L passing through one mask hole 65a. In this case, one mask hole 65a may be assigned to one through-hole 40. The photomask 65 may include a light-transmissive substrate such as glass, and a layer formed of a metal material such as chromium in a pattern on this substrate, and the layer having the above-described mask holes 65a. In FIG. 13C, the above-described substrate is omitted for simplicity of the drawing.

[0196] Subsequently, the moving stage 60 may be moved to adjust the irradiation position of the laser light L. When the laser light generating device 61 is movable, the laser light generating device 61 may be moved.

[0197] Next, the mask layer 20 is irradiated with the laser beam L from the laser beam generator 61 onto the second surface 20b. As a result, the material of a plurality of portions of the mask layer 20 irradiated with the laser beam L sublimes and is removed, and as shown in FIG. 13B, a plurality of through holes 40 are formed in parallel. Each through hole 40 is formed by the laser beam L that has passed through one assigned mask hole 65a. The number of times of irradiating the laser beam L to form each through hole 40 may be once, or each through hole 40 may be formed by irradiating a plurality of times. Further, the photomask 65 is not limited to being used when forming a plurality of through holes 40 in parallel, and may also be used when forming the through holes 40 one by one with the laser beam L passing through one mask hole 65a. In this case, the through holes 40 are formed one by one by the irradiation of the laser beam L.

[0198] A plurality of mask holes 65a may be assigned to one through-hole 40. In this case, a mask hole 65a having a relatively large planar shape may be arranged at the center of the through-hole 40. Further, mask holes 65a having relatively small planar shapes may be arranged around it. And the planar shape of the mask holes 65a may gradually become smaller from the center of the through-hole 40 toward the outside. Such a pattern of the mask holes 65a may be referred to as a halftone pattern or a gradation pattern. That is, a mask hole 65a having a relatively large planar shape may be assigned to the center of the through-hole 40, and mask holes 65a having relatively small planar shapes may be assigned around the mask hole 65a. In this case, the laser beam L passing through the large mask hole 65a at the center is irradiated onto the mask layer 20 with a relatively high intensity. Therefore, a hole penetrating the mask layer 20 can be formed by the laser beam L passing through the mask hole 65a. The laser beam L passing through the small mask holes 65a around is irradiated onto the mask layer 20 with a relatively low intensity. Therefore, at the position irradiated with the laser beam L passing through the mask hole 65a, the material is removed in a concave shape without penetrating the mask layer 20. By gradually making the planar shape of the mask holes 65a assigned to one through-hole 40 smaller from the center toward the outside, a plurality of through-holes 40 having inclined wall surfaces 41 as shown in FIG. 3 can be formed in parallel.

[0199] In FIG. 13B, an example of forming a plurality of through-holes 40 in parallel by irradiating a laser beam L using a photomask 65 has been described. However, the present disclosure is not limited to this, and the through-holes 40 may be formed one by one by irradiating the laser beam L through the plurality of mask holes 65a of the photomask 65. That is, when a plurality of mask holes 65a are assigned to one through-hole 40, the laser beam L may be irradiated only to these mask holes 65a. In this case, through-holes 40 having inclined wall surfaces 41 can be formed one by one.

[0200] In the through-hole forming step, the step of forming the second alignment marks 46 shown in FIGS. 3 and 4 may be performed. That is, the vapor deposition mask 10 is inverted in the vertical direction so that the first surface 20a faces the irradiation head H. Then, the first surface 20a of the first metal layer 21 may be irradiated with laser light to form concave second alignment marks 46.

[0201] In this way, the vapor deposition mask 10 according to the present embodiment as shown in FIG. 14 is obtained.

[0202] As described above, the first metal layer 21 according to the present embodiment is formed by plating. In this case, stress acting in the shrinking direction in plan view remains in the first metal layer 21. Thus, for example, even when the temperature of the first metal layer 21 rises and the first metal layer 21 thermally expands as in the case of vapor deposition, if the above stress remains, the positional accuracy of the through-hole 40 can be maintained. This can be said to be equivalent to a state in which a general vapor deposition mask manufactured by etching treatment or plating treatment alone is stretched on a frame.

[0203] Next, a method for manufacturing an organic EL display device using the vapor deposition mask 10 according to the present embodiment will be described with reference to FIGS. 1, 15A, and 15B.

[0204] The components and display region of the organic device 100 will be described in detail. FIG. 15A is a plan view showing an example of the organic device 100 and is a plan view showing an organic layer vapor-deposited in the vapor deposition step. FIG. 15B is a cross-sectional view of the organic device 100 of FIG. 15A taken along line B-B. FIG. 15A is a plan view showing an organic layer vapor-deposited in the vapor deposition step, and the second electrode 140, which will be described later and is formed after the vapor deposition step, is omitted. As an example of the organic device 100, an organic EL display device can be mentioned. The organic device 100 includes a light-emitting layer formed on a vapor deposition substrate 110, which will be described later, by using the vapor deposition mask 10 according to the present embodiment described above. One organic device 100 may correspond to one display region.

[0205] As shown in FIGS. 15A and 15B, the organic device 100 includes a vapor deposition substrate 110 and an element 115 located on the vapor deposition substrate 110. The element 115 may have a first electrode 120, an organic layer 130 located on the first electrode 120, and a second electrode 140 located on the organic layer 130.

[0206] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in a plan view. The insulating layer 160 contains, for example, polyimide. The insulating layer 160 may overlap with the end portion of the first electrode 120.

[0207] The organic device 100 may be an active matrix type. For example, although not shown, the organic device 100 may include a switch electrically connected to each of a plurality of elements 115. The switch is, for example, a transistor. The switch can control the ON / OFF of the voltage or current to the corresponding element 115.

[0208] The vapor deposition substrate 110 may have a first surface 110a on which the first electrode 120 is formed and a second surface 110b located on the side opposite to the first surface 110a. The vapor deposition substrate 110 may be a plate-like member having insulating properties. The vapor deposition substrate 110 may have light transmissibility that allows visible light to pass through.

[0209] When the vapor deposition substrate 110 has a predetermined light transmissibility, the light transmissibility of the vapor deposition substrate 110 may be a light transmissibility that allows the light emitted from the organic layer 130 to pass through for display. For example, the transmittance of the vapor deposition substrate 110 in the visible light region may be 80% or more, or 90% or more. The transmittance of the vapor deposition substrate 110 can be measured by the test method for the total light transmittance of plastic-transparent materials according to JIS K7361-1.

[0210] The vapor deposition substrate 110 may or may not have flexibility. The vapor deposition substrate 110 can be appropriately selected according to the use of the organic device 100.

[0211] The vapor deposition substrate 110 contains, for example, silicon and may be, for example, a silicon substrate. Alternatively, the vapor deposition substrate 110 contains glass and may be, for example, a glass substrate. Further, as the material of the vapor deposition substrate 110, a rigid material having no flexibility such as quartz glass, Pyrex (registered trademark) glass, or synthetic quartz plate may be used. Alternatively, as the material of the vapor deposition substrate 110, a flexible material such as a resin film (for example, a polyimide film or a liquid crystal polymer), an optical resin plate, or thin glass may be used. Further, the vapor deposition substrate 110 may be a laminate having a barrier layer on one or both sides of the resin film.

[0212] When the vapor deposition substrate 110 is made of a material other than a silicon substrate, the thickness of the vapor deposition substrate 110 can be appropriately selected according to the material used for the vapor deposition substrate 110, the use of the organic device 100, etc. In this case, the thickness of the vapor deposition substrate 110 may be, for example, 0.005 mm or more. Also, the thickness of the vapor deposition substrate 110 may be 5 mm or less.

[0213] The element 115 is configured to realize some function when a voltage is applied between the first electrode 120 and the second electrode 140, or when a current flows between the first electrode 120 and the second electrode 140. For example, when the element 115 is a pixel of an organic EL display device, the element 115 can emit light constituting an image.

[0214] The first electrode 120 contains a material having conductivity. For example, the first electrode 120 contains a metal, a metal oxide having conductivity, or other inorganic materials having conductivity. The first electrode 120 may contain a metal oxide having light transmissibility and conductivity such as indium tin oxide.

[0215] As the material constituting the first electrode 120, metals such as Au, Cr, Mo, Ag, or Mg may be used. Alternatively, as the material constituting the first electrode 120, indium tin oxide called ITO, indium zinc oxide called IZO, or inorganic oxides such as zinc oxide or indium oxide may be used. As the material constituting the first electrode 120, conductive polymers such as metal-doped polythiophene may be used. These conductive materials may be used alone or in combination of two or more. When two or more are used, layers made of each material may be laminated on the conductive material. Also, an alloy containing two or more materials may be used as the conductive material. For example, a magnesium alloy such as MgAg may be used as the conductive material.

[0216] The organic layer 130 contains an organic material. When the organic layer 130 is energized, the organic layer 130 can exhibit some function. Energization means that a voltage is applied to the organic layer 130 or a current flows through the organic layer 130. As the organic layer 130, a light-emitting layer that emits light by energization, a layer whose light transmittance or refractive index changes by energization, or the like may be used. The organic layer 130 may contain an organic semiconductor material.

[0217] As shown in FIG. 15B, the organic layer 130 may include a first organic layer 130A and a second organic layer 130B. Also, as shown in FIG. 15A, the organic layer 130 may further include a third organic layer 130C. The first organic layer 130A, the second organic layer 130B, and the third organic layer 130C are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer. In the following description, when explaining the configuration common to the first organic layer 130A, the second organic layer 130B, and the third organic layer 130C among the configurations of the organic layer, the term and symbol "organic layer 130" are used.

[0218] The laminated structure including the first electrode 120, the first organic layer 130A, and the second electrode 140 is also referred to as the first element 115A. The laminated structure including the first electrode 120, the second organic layer 130B, and the second electrode 140 is also referred to as the second element 115B. The laminated structure including the first electrode 120, the third organic layer 130C, and the second electrode 140 is also referred to as the third element 115C. When the organic device 100 is an organic EL display device, the first element 115A, the second element 115B, and the third element 115C are each sub-pixels.

[0219] In the following description, when explaining the components common to the first element 115A, the second element 115B, and the third element 115C among the components of the element, the term and symbol "element 115" are used. In a plan view such as FIG. 15A, the outline of the element 115 may be the outline of the organic layer 130 that overlaps the first electrode 120 and the second electrode 140 in plan view. When the organic device 100 includes the insulating layer 160, the outline of the element 115 may be the outline of the organic layer 130 that overlaps the first electrode 120 and the second electrode 140 in plan view and does not overlap the insulating layer 160.

[0220] The arrangement of each of the first element 115A, the second element 115B, and the third element 115C will be described. As shown in FIG. 15A, the first element 115A, the second element 115B, and the third element 115C may each be arranged along the first element direction F1. The first element 115A, the second element 115B, and the third element 115C may each be arranged along the second element direction F2.

[0221] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 positioned therebetween is driven. When the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130, and the light is taken out to the outside from the second electrode 140 side or the first electrode 120 side.

[0222] When the organic layer 130 includes a light-emitting layer that emits light by energization, the organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like.

[0223] For example, when the first electrode 120 is an anode, the organic layer 130 may have a hole injection and transport layer between the light-emitting layer and the first electrode 120. The hole injection and transport layer may be a hole injection layer having a hole injection function, a hole transport layer having a hole transport function, or a layer having both a hole injection function and a hole transport function. Further, the hole injection and transport layer may be a laminate of a hole injection layer and a hole transport layer.

[0224] When the second electrode 140 is a cathode, the organic layer 130 may have an electron injection and transport layer between the light-emitting layer and the second electrode 140. The electron injection and transport layer may be an electron injection layer having an electron injection function, an electron transport layer having an electron transport function, or a layer having both an electron injection function and an electron transport function. Further, the electron injection and transport layer may be a laminate of an electron injection layer and an electron transport layer.

[0225] The light-emitting layer contains a light-emitting material. The light-emitting layer may contain an additive for improving leveling properties.

[0226] Known materials may be used as the light-emitting material, and for example, light-emitting materials such as dye-based materials, metal complex-based materials, and polymer-based materials may be used.

[0227] The film thickness of the light-emitting layer is not particularly limited as long as it can provide a recombination site for electrons and holes and exhibit the function of emitting light. The film thickness of the light-emitting layer may be, for example, 1 nm or more. Further, the film thickness of the light-emitting layer may be 500 nm or less.

[0228] The second electrode 140 includes a conductive material such as a metal. The second electrode 140 is formed on the organic layer 130 by a vapor deposition method using a mask described later. As the material constituting the second electrode 140, platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon, etc. may be used. These conductive materials may be used alone or in combination of two or more. When two or more are used, layers made of each material may be laminated on the conductive material. Also, an alloy containing two or more materials may be used as the conductive material. For example, as the conductive material, a magnesium alloy such as MgAg, an aluminum alloy such as AlLi, AlCa, AlMg, an alloy of alkali metals and alkaline earth metals, etc. may be used.

[0229] As shown in FIG. 15B, the organic device 100 may include a sealing layer (not shown) that covers elements on the vapor deposition substrate 110 such as the organic layers 130A, 130B, 130C. The sealing layer can suppress the entry of water vapor, etc. outside the organic device 100 into the organic device 100. Thereby, it is possible to suppress the deterioration of the organic layers 130A, 130B, 130C, etc. due to moisture. The sealing layer may include, for example, a layer made of an organic material. The organic material may have a refractive index equal to or close to that of the organic layers 130A, 130B, 130C in order to suppress the occurrence of light refraction in the sealing layer. The organic material may be sealed with an inorganic material such as silicon nitride (SiN), for example. In this case, the sealing layer may have a laminated structure in which a layer of an organic material and a layer of an inorganic material are laminated. A planarization layer (not shown) may be interposed between the second electrode 140 and the sealing layer. The planarization layer may be a layer that enters the unevenness of the elements on the vapor deposition substrate 110 to improve the adhesion of the sealing layer.

[0230] Such a method for manufacturing the organic device 100 may include a step of depositing a deposition material 82 on a deposition substrate 110 using a deposition mask 10 to form organic layers 130A, 130B, and 130C. More specifically, the method for manufacturing the organic EL display device according to the present embodiment may include a deposition mask preparation step, an alignment step, an adhesion step, a deposition step, and a cutting step.

[0231] First, as the deposition mask preparation step, the above-described deposition mask 10 may be prepared.

[0232] After the deposition mask preparation step, as the alignment step, the deposition mask 10 is aligned with the deposition substrate 110. In the alignment step, the position of the through hole 40 of the deposition mask 10 with respect to the deposition substrate 110 is confirmed. At this time, the position of the through hole 40 of the deposition mask 10 with respect to the deposition substrate 110 may be adjusted. For example, the first alignment mark 45 provided on the substrate frame 17 of the mask substrate 15 and the corresponding substrate alignment mark 111 (see FIG. 3) of the deposition substrate 110 are aligned. Also, the second alignment mark 46 provided on the mask bars 28a and 28b of the mask layer 20 and the corresponding alignment mark (not shown) of the deposition substrate 110 are aligned. For example, first, a rough alignment between the deposition substrate 110 and the through hole 40 may be performed using the first alignment mark 45, and then a fine alignment between the deposition substrate 110 and the through hole 40 may be performed using the second alignment mark 46. As a result, the position of the through hole 40 of the deposition mask 10 with respect to the deposition substrate 110 can be adjusted with high accuracy.

[0233] After the alignment process, as an adhesion process, the first surface 20a of the mask layer 20 of the evaporation mask 10 may be adhered to the evaporation substrate 110. More specifically, in the evaporation apparatus 80, the first surface 20a of the mask layer 20 of the evaporation mask 10 is adhered to the first surface 110a (see FIG. 3) of the evaporation substrate 110 in the aligned state. At this time, the evaporation substrate 110 is interposed between the evaporation mask 10 and the magnet 85, and the evaporation mask 10 is attracted to the evaporation substrate 110 by the magnetic force of the magnet 85. As a result, the evaporation substrate 110 is adhered to the first surface 20a of the evaporation mask 10.

[0234] After the adhesion process, as an evaporation process, the evaporation material 82 may be evaporated onto the first electrode 120 formed on the evaporation substrate 110 through the through holes 40 of the evaporation mask 10 to form the organic layers 130A, 130B, 130C (see FIG. 15B). The organic layers 130A, 130B, 130C are formed on the corresponding hole transport layers. More specifically, the pressure inside the evaporation apparatus 80 is reduced to a vacuum atmosphere. Then, the evaporation material 82 is evaporated and made to fly to the hole transport layer. The flown evaporation material 82 passes through each through hole 40 of the evaporation mask 10 and adheres to the desired hole transport layer. As a result, the organic layers 130A, 130B, 130C are formed on the first electrode 120 and the insulating layer 160 in a pattern corresponding to the pattern of the through holes 40.

[0235] Here, the organic layers 130A, 130B, 130C are formed so as to straddle the first electrode 120 and the insulating layer 160 adjacent to the first electrode 120. Although not shown, the adjacent organic layers 130A, 130B, 130C on the insulating layer 160 may overlap.

[0236] As described above, in the present embodiment, the through holes 40 are arranged in a predetermined pattern in each effective region 23. When displaying using a plurality of colors, a vapor deposition mask 10 having through holes 40 formed in a pattern corresponding to each organic layer 130A, 130B, 130C of each color is prepared. With each vapor deposition mask 10, a vapor deposition material 82 of each color is attached to the corresponding hole transport layer. Thereby, for example, an organic light-emitting material for red, an organic light-emitting material for green, and an organic light-emitting material for blue can be respectively vapor-deposited on one vapor deposition substrate 110, and the organic layers 130A, 130B, 130C can be respectively formed.

[0237] After the organic layers 130A, 130B, 130C are formed, an electron transport layer and an electron injection layer are formed on the organic layers 130A, 130B, 130C. Then, a second electrode 140 is formed. The second electrode 140 is formed so as to cover each organic layer 130A, 130B, 130C, and is formed so as to straddle the first electrode 120 and the insulating layer 160 adjacent to the first electrode 120 on the organic layers 130A, 130B, 130C. For example, the second electrode 140 may be continuously formed so as to straddle two adjacent organic layers 130A, 130B, 130C in plan view.

[0238] The above-described planarization layer and sealing layer are formed on the formed second electrode 140. In this way, elements such as the organic layers 130A, 130B, 130C provided on the vapor deposition substrate 110 are sealed with the sealing layer.

[0239] After the vapor deposition process, as a cutting process, the vapor deposition substrate 110 is cut for each organic device 100. In this case, for example, the vapor deposition substrate 110 is cut using a dicing saw between adjacent organic devices 100. Depending on the distance between adjacent organic devices 100 and the width of the dicing saw, the vapor deposition substrate 110 may be cut by applying single sawing, or the vapor deposition substrate 110 may be cut by applying double sawing.

[0240] In this way, an organic device 100 in which organic layers 130A, 130B, 130C of each color are formed is obtained on the vapor deposition substrate 110.

[0241] As described above, according to this embodiment, the vapor deposition mask 10 includes a mask layer 20 having a through hole 40 and a mask substrate 15 located on the second surface 20b of the mask layer 20. Since the mask substrate 15 is located on the mask layer 20 in this way, the strength of the vapor deposition mask 10 can be improved, and in this state, it can be adhered to the vapor deposition substrate 110. As a result, the shape accuracy and position accuracy of the through hole 40 in the mask layer 20 can be maintained at the shape accuracy and position accuracy at the time when the through hole 40 is formed, and the fineness of the through hole 40 can be improved. It is also possible to increase the fineness of the through hole 40. In addition, the vapor deposition material 82 can be adhered to the vapor deposition substrate 110 in a state where the shape accuracy and position accuracy of the through hole 40 are increased. Therefore, the fineness of the organic layers 130A, 130B, and 130C of the organic device 100 can be improved. In this case, it is also possible to increase the fineness of the pixel constituted by the elements including the organic layers 130A, 130B, and 130C.

[0242] Further, according to this embodiment, the mask substrate 15 contains silicon. When the vapor deposition substrate 110 is a silicon substrate, the mask substrate 15 can be made of the same kind of material or the same material as the vapor deposition substrate 110. Thereby, the difference between the thermal expansion coefficient of the mask substrate 15 and the thermal expansion coefficient of the vapor deposition substrate 110 can be reduced. Therefore, a decrease in accuracy can be suppressed. Here, for example, when the pixel density of the organic device 100 is high, it is required to increase the shape accuracy and position accuracy of the through hole 40. Since the mask substrate 15 according to this embodiment contains silicon, the difference in thermal expansion coefficient from the vapor deposition substrate 110 can be reduced as described above. Thus, even when the vapor deposition mask 10 accurately aligned with the vapor deposition substrate 110 thermally expands, it is possible to suppress the displacement of the position of the through hole 40 with respect to the vapor deposition substrate 110. Therefore, the shape accuracy and position accuracy of the organic layers 130A, 130B, and 130C formed on the vapor deposition substrate 110 can be improved. As a result, an organic device 100 including high-fineness organic layers 130A, 130B, and 130C can be easily manufactured.

[0243] Further, according to the present embodiment, the second surface 20b of the mask layer 20 is attached to the mask substrate 15. This can further improve the strength of the evaporation mask 10. Here, when the mask layer 20 is manufactured separately from the mask substrate 15, the mask layer 20 is stretched on a frame such as the mask substrate 15 while applying tension, and then fixed by welding or the like. However, in the evaporation mask 10 according to the present embodiment, since the mask layer 20 is attached to the mask substrate 15, such stretching can be made unnecessary. As a result, the shape accuracy and the position accuracy of the through hole 40 of the mask layer 20 attached to the mask substrate 15 can be maintained at the shape accuracy and the position accuracy at the time when the through hole 40 is formed. Therefore, the fineness of the through hole 40 can be further improved.

[0244] Further, according to the present embodiment, the mask layer 20 includes a first metal layer 21 forming the first surface 20a and a second metal layer 22 positioned between the first metal layer 21 and the mask substrate 15. As a result, the second metal layer 22 can be configured as a layer having a specific purpose. For example, the second metal layer 22 can be formed of a material capable of ensuring the adhesion between the first metal layer 21 and the mask substrate 15. In this case, the evaporation mask 10 can be attached to the mask substrate 15, and the strength of the evaporation mask 10 can be further improved. Alternatively, the second metal layer 22 can be formed of a material having resistance to an etching medium used in the substrate etching process. In this case, in the substrate etching process, it is possible to suppress the first metal layer 21 from being etched by the etching medium.

[0245] Further, according to the present embodiment, the thickness of the second metal layer 22 forming the second surface 20b of the mask layer 20 is smaller than the thickness of the first metal layer 21 forming the first surface 20a. As a result, the second metal layer 22 can be configured as a layer having a specific purpose. That is, when the second metal layer 22 is configured as a layer having a specific purpose, it may be difficult to reduce the coefficient of thermal expansion. For example, the purpose of the second metal layer 22 includes ensuring adhesion to the first metal layer 21, ensuring adhesion to the mask substrate 15, suppressing erosion by an etching medium used in the substrate etching process, or protecting the substrate-side layer 26 from an electroplating solution containing the material constituting the first metal layer 21. Materials for achieving such purposes may have a large coefficient of thermal expansion. However, even in this case, by reducing the thickness of the second metal layer 22, the influence of thermal expansion of the second metal layer 22 can be suppressed. Therefore, a decrease in accuracy can be suppressed.

[0246] Further, according to the present embodiment, the first metal layer 21 contains a metal material. As a result, the through hole 40 can be formed in the mask layer 20 made of a metal material. Thus, when the deposition mask 10 is cleaned after the deposition process of forming the organic layers 130A, 130B, and 130C on the deposition substrate 110, it is possible to suppress the layer where the through hole 40 is located from absorbing the cleaning liquid. Therefore, it is possible to suppress the displacement of the through hole 40 and suppress the deformation of the through hole 40. As a result, the fineness of the through hole 40 of the deposition mask 10 after cleaning can be improved. Further, when the first metal layer 21 contains a magnetic metal material, the deposition mask 10 can be brought into close contact with the deposition substrate 110 by using the magnet 85. In this case, the deposition mask 10 can be attracted in the direction of the magnet 85 by the magnetic force, and the adhesion between the deposition mask 10 and the deposition substrate 110 can be improved. Therefore, the fineness of the organic layers 130A, 130B, and 130C of the organic device 100 can be improved.

[0247] Further, according to the present embodiment, the second metal layer 22 includes a main body region portion 22a located between the first metal layer 21 and the substrate frame 17, and an opening region portion 22b located within the substrate opening 16 in a plan view. Thereby, in the substrate etching process, the second metal layer 22 can be configured as an etching stopper layer. Further, the through hole 40 penetrates through the first metal layer 21 and the opening region portion 22b. Thereby, it is not necessary to remove the opening region portion 22b. Furthermore, since the second metal layer 22 includes the opening region portion 22b, the strength of the vapor deposition mask 10 can be improved.

[0248] Further, according to the present embodiment, the opening dimension of the through hole 40 in a predetermined direction on the second surface 20b is larger than the opening dimension of the through hole 40 in the predetermined direction on the first surface 20a. Thereby, when the vapor deposition substrate 110 is brought into close contact with the first surface 20a during vapor deposition, the generation of shadow can be suppressed. Therefore, the shape accuracy and the position accuracy of the organic layers 130A, 130B, and 130C formed by the vapor deposition material 82 attached to the vapor deposition substrate 110 can be improved, and the fineness of the organic device 100 can be improved.

[0249] Further, according to the present embodiment, two or more through holes 40 are located within the substrate opening 16 of the mask substrate 15. Thereby, during vapor deposition, the generation of shadow by the mask substrate 15 can be suppressed. Therefore, the shape accuracy and the position accuracy of the organic layers 130A, 130B, and 130C formed by the vapor deposition material 82 attached to the vapor deposition substrate 110 can be improved, and the fineness of the organic device 100 can be improved. Further, according to the present embodiment, since a plurality of through hole groups 30 are located within the substrate opening 16, the generation of shadow can be further suppressed.

[0250] Further, according to the present embodiment, a first alignment mark 45 is provided on the surface of the mask substrate 15 opposite to the mask layer 20. As a result, in the alignment step of aligning the vapor deposition mask 10 with the vapor deposition substrate 110, the vapor deposition mask 10 and the vapor deposition substrate 110 can be aligned using the first alignment mark 45. Since the first alignment mark 45 is provided on the mask substrate 15, the vapor deposition mask 10 can be entirely aligned with the vapor deposition substrate 110.

[0251] Further, according to the present embodiment, a second alignment mark 46 is provided at a position closer to the through hole 40 than the first alignment mark 45. As a result, in the alignment step of aligning the vapor deposition mask 10 with the vapor deposition substrate 110, the vapor deposition mask 10 and the vapor deposition substrate 110 can be aligned using the second alignment mark 46. Also, since the second alignment mark 46 is disposed at a position closer to the through hole 40 than the first alignment mark 45, the alignment accuracy between the vapor deposition mask 10 and the vapor deposition substrate 110 can be improved. Further, since the second alignment mark 46 is provided on the first surface 20a of the mask layer 20, the second alignment mark 46 can be visually recognized through the vapor deposition substrate 110 even when the first metal layer 21 does not have light transmissivity.

[0252] Further, according to the present embodiment, the second alignment mark 46 is located on the mask bars 28a and 28b provided between the adjacent through hole groups 30. As a result, the second alignment mark 46 can be disposed at a position even closer to the through hole 40. Therefore, the alignment accuracy between the vapor deposition mask 10 and the vapor deposition substrate 110 can be further improved. Further, according to the present embodiment, the second alignment mark 46 is located at the intersection 29 where the first mask bar 28a and the second mask bar 28b intersect. As a result, the through holes 40 of the adjacent through hole groups 30 can be efficiently aligned.

[0253] Further, according to the present embodiment, the through hole 40 is formed by irradiating the mask layer 20 with the laser beam L. Thereby, the shape accuracy and the position accuracy of the through hole 40 can be improved. Therefore, the fineness of the vapor deposition mask 10 can be improved.

[0254] Further, according to the present embodiment, after the substrate opening 16 is formed, the laser beam L is irradiated onto the second surface 20b of the mask layer 20 through the substrate opening 16. Thereby, the opening dimension of the through hole 40 in a predetermined direction on the second surface 20b can be more easily made larger than the opening dimension of the through hole 40 in the predetermined direction on the first surface 20a. Thus, when the vapor deposition substrate 110 is brought into close contact with the first surface 20a during vapor deposition, the through hole 40 that can suppress the generation of shadow can be easily formed. Therefore, the shape accuracy and the position accuracy of the organic layers 130A, 130B, and 130C formed by the vapor deposition material 82 attached to the vapor deposition substrate 110 can be improved, and the fineness of the organic device 100 can be improved.

[0255] Further, according to the present embodiment, the laser beam L is a femtosecond laser beam. Thereby, a high-intensity laser beam with a short pulse width can be output to the mask layer 20. Therefore, it is possible to suppress the formation of burrs on the first surface 20a of the mask layer 20 and improve the adhesion to the vapor deposition substrate 110. Therefore, the shape accuracy and the position accuracy of the organic layers 130A, 130B, and 130C formed by the vapor deposition material 82 attached to the vapor deposition substrate 110 can be improved, and the fineness of the organic device 100 can be improved.

[0256] Various modifications can be made to the above-described embodiment. Hereinafter, the modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above-described embodiment will be used for the parts that can be configured in the same manner as the above-described embodiment, and the overlapping description will be omitted. Further, when it is obvious that the operational effects obtained in the above-described embodiment can also be obtained in the modified example, the description thereof may be omitted.

[0257] Next, a first modified example will be described.

[0258] In the above-described embodiment, an example has been described in which the second metal layer 22 includes a main body region portion 22a located between the first metal layer 21 and the substrate frame 17, and an opening region portion 22b located within the substrate opening 16 in a plan view. However, the present disclosure is not limited to this.

[0259] For example, as shown in FIG. 16, the second metal layer 22 may include a main body region portion 22a and a mask layer opening 22d formed along the substrate opening 16 in a plan view. The mask layer opening 22d may penetrate the main body side layer 25, the substrate side layer 26, and the intermediate layer 27. The mask layer opening 22d may have the same planar shape as the substrate opening 16. In the example shown in FIG. 16, the through hole 40 penetrates the first metal layer 21. That is, the through hole 40 extends from the first surface 20a to the surface of the first metal layer 21 facing the mask substrate 15 and penetrates the first metal layer 21.

[0260] The opening dimension of the through hole 40 in a predetermined direction (for example, the first direction D11 or the second direction D12) on the surface of the first metal layer 21 facing the mask substrate 15 may be larger than the opening dimension of the through hole 40 in the said predetermined direction on the first surface 20a. In one embodiment, the cross-sectional opening of the through hole 40 in a direction parallel to the first surface 20a may gradually increase from the first surface 20a towards the surface of the first metal layer 21 facing the mask substrate 15. In other words, the cross-sectional area of each through hole 40 in a cross-section parallel to the first surface 20a at each position along the normal direction of the mask layer 20 may gradually increase from the first surface 20a towards the surface of the first metal layer 21 facing the mask substrate 15. In this case, the through hole 40 may have a wall surface 41 formed so as to move away from the central axis CL of the through hole 40 from the first surface 20a towards the surface of the first metal layer 21 facing the mask substrate 15. In FIG. 16, an example is shown in which the wall surface 41 of the through hole 40 linearly inclines with respect to the central axis CL so as to move away from the central axis CL from the first surface 20a towards the surface of the first metal layer 21 facing the mask substrate 15. For example, the opening dimension of the through hole 40 on the first surface 20a of the mask layer 20 may be the reference sign S1 shown in FIG. 5A. The opening dimension of the through hole 40 on the surface of the first metal layer 21 facing the mask substrate 15 may be the reference sign S2 shown in FIG. 5A.

[0261] The mask layer opening 22d shown in FIG. 16 may be formed in the second metal layer 22 as a mask layer opening forming process after the substrate opening forming process. The mask layer opening 22d may be formed by etching the second metal layer 22. More specifically, by etching the second metal layer 22, the region of the second metal layer 22 corresponding to the substrate opening 16 is removed. In this way, the mask layer opening 22d may be formed. For example, N-methylpyrrolidone (NMP) may be used as the etching solution. The second metal layer 22 may be immersed in an etching solution at room temperature or higher and 70°C or lower for 20 minutes. N-methylpyrrolidone may be used without diluting the stock solution. Also, the main body side layer 25, the substrate side layer 26, and the intermediate layer 27 may be removed by separate etching solutions.

[0262] After the mask layer opening forming step, a through hole forming step may be performed. In the through hole forming step in this case, a mask layer opening 22d is formed in the second metal layer 22. Therefore, the laser beam L is irradiated onto the surface of the first metal layer 21 facing the mask substrate 15 through the substrate opening 16 and the mask layer opening 22d. As a result, a through hole 40 penetrating the first metal layer 21 is formed in the first metal layer 21.

[0263] According to the first modification example as described above, since the second metal layer 22 includes the mask layer opening 22d, the thickness of the portion of the mask layer 20 where the through hole 40 is formed can be reduced. Therefore, the generation of shadow can be suppressed.

[0264] Next, a second modification example will be described.

[0265] In the first modification example described above, an example in which the through hole 40 is formed by irradiating the first metal layer 21 with the laser beam L has been described. However, the present disclosure is not limited to this. For example, the through hole 40 may be formed when the first metal layer 21 is plated in the first metal layer forming step.

[0266] The method for manufacturing the vapor deposition mask 10 according to this modification example may include a substrate preparation step, a mask layer forming step, a substrate opening forming step, and a mask layer opening forming step. In the mask layer forming step, first, a second metal layer forming step is performed, then a resist layer forming step is performed, and next, a first metal layer forming step is performed. In the first metal layer forming step, a through hole forming step may be performed. After the first metal layer forming step, a resist layer removing step is performed.

[0267] In the resist layer forming step, as shown in FIG. 17, a resist layer 55 is formed on the second metal layer 22. The resist layer 55 is formed in a pattern so as to correspond to the through hole 40.

[0268] More specifically, first, a liquid resist is applied by a spinner onto the surface of the main body side layer 25 opposite to the mask substrate 15. Thereafter, the liquid resist is heated to be dried and cured. As a result, a resist layer 55 is formed. The resist layer 55 may be formed entirely on the main body side layer 25. The heat treatment of the liquid resist may be performed, for example, at a temperature of 90° C. for 90 seconds.

[0269] Subsequently, by photolithography processing, the resist layer 55 is formed in a pattern so as to have a plurality of resist lands 56 formed at positions corresponding to the through holes 40. For example, when the resist layer 55 is a positive resist, an exposure mask (not shown) that does not irradiate light to the portion corresponding to the through hole 40 in the resist layer 55 is disposed on the resist layer 55. Thereafter, the resist layer 55 is exposed through this exposure mask. The exposure may be performed using an i-line stepper exposure apparatus. The exposure time may be 420 msec. In this case, in the region irradiated with light, the exposure amount of light may be reduced by adjusting the focus during exposure near the periphery of the region. As a result, the wall surface 57 of the resist land 56 is formed to be inclined after development. As shown in FIG. 17, the wall surface 57 of the resist land 56 may be inclined at an angle θ3 with respect to the second surface 20b of the mask layer 20. The angle θ3 of the wall surface 57 may be the same as the angle θ1 shown in FIG. 3. That is, the through hole 40 is formed along this wall surface 57. The wall surface 41 of the through hole 40 in this case is the same as the angle θ1 shown in FIG. 3. For example, when the angle θ3 is 70°, the angle θ1 of the wall surface 41 may be 70°.

[0270] Thereafter, the exposed resist layer 55 is developed. As a result, the exposed portion of the resist layer 55 is removed. Therefore, as shown in FIG. 17, the resist layer 55 is formed in a pattern so as to have a plurality of resist lands 56 disposed at positions corresponding to the through holes 40.

[0271] After development, the resist layer 55 may be heated. By doing so, the adhesion of the resist layer 55 to the main body side layer 25 can be improved. The heat treatment of the resist layer 55 may be performed, for example, at a temperature of 110° C. for 90 seconds.

[0272] For the positive resist, for example, iP5700 manufactured by Tokyo Ohka Kogyo Co., Ltd. may be used. However, as the resist layer 55, a negative resist may be used. Also, a dry film resist may be attached to the main body side layer 25 as the resist layer 55.

[0273] The thickness H9 of the resist layer 55 may be greater than the thickness H3 of the first metal layer 21 formed in the subsequent first metal layer forming step.

[0274] The thickness H9 of the resist layer 55 may be, for example, 4.0 μm or more, 4.4 μm or more, 4.8 μm or more, or 5.2 μm or more. By setting the thickness H9 to 4.0 μm or more, it is possible to secure a thickness greater than that of the first metal layer 21 in the first metal layer formation step and form a through hole 40 that penetrates the first metal layer 21. Further, the thickness H9 may be, for example, 5.8 μm or less, 6.2 μm or less, 6.6 μm or less, or 7.0 μm or less. By setting the thickness H9 to 7.0 μm or less, in the case of a dry film resist, availability can be ensured, and in the case of a liquid resist, the resist layer 55 can be efficiently formed. The range of the thickness H9 may be determined by a first group consisting of 4.0 μm, 4.4 μm, 4.8 μm, and 5.2 μm, and / or a second group consisting of 5.8 μm, 6.2 μm, 6.6 μm, and 7.0 μm. The range of the thickness H9 may be determined by a combination of any one of the values included in the above-described first group and any one of the values included in the above-described second group. The range of the thickness H9 may be determined by a combination of any two of the values included in the above-described first group. The range of the thickness H9 may be determined by a combination of any two of the values included in the above-described second group.For example, it may be 4.0 μm or more and 7.0 μm or less, may be 4.0 μm or more and 6.6 μm or less, may be 4.0 μm or more and 6.2 μm or less, may be 4.0 μm or more and 5.8 μm or less, may be 4.0 μm or more and 5.2 μm or less, may be 4.0 μm or more and 4.8 μm or less, may be 4.0 μm or more and 4.4 μm or less, may be 4.4 μm or more and 7.0 μm or less, may be 4.4 μm or more and 6.6 μm or less, may be 4.4 μm or more and 6.2 μm or less, may be 4.4 μm or more and 5.8 μm or less, may be 4.4 μm or more and 5.2 μm or less, may be 4.4 μm or more and 4.8 μm or less, may be 4.8 μm or more and 7.0 μm or less, may be 4.8 μm or more and 6.6 μm or less, may be 4.8 μm or more and 6.2 μm or less, may be 4.8 μm or more and 5.8 μm or less, may be 4.8 μm or more and 5.2 μm or less, may be 5.2 μm or more and 7.0 μm or less, may be 5.2 μm or more and 6.6 μm or less, may be 5.2 μm or more and 6.2 μm or less, may be 5.2 μm or more and 5.8 μm or less, may be 5.8 μm or more and 7.0 μm or less, may be 5.8 μm or more and 6.6 μm or less, may be 5.8 μm or more and 6.2 μm or less, may be 6.2 μm or more and 7.0 μm or less, may be 6.2 μm or more and 6.6 μm or less, may be 6.6 μm or more and 7.0 μm or less.

[0275] In the first metal layer forming step, as shown in FIG. 18, the first metal layer 21 is formed on the surface of the second metal layer 22 opposite to the mask substrate 15. The first metal layer 21 may be formed by plating in the same manner as the first metal layer forming step shown in FIG. 8. In this case, since the resist layer 55 is formed on the surface of the second metal layer 22 opposite to the mask substrate 15, the components of the plating solution are deposited on the portion of the main body side layer 25 where the resist land 56 of the resist layer 55 is not formed. The first metal layer 21 is formed by the components thus deposited. Through holes 40 are formed in the first metal layer 21 thus formed. That is, in the first metal layer forming step, through holes 40 are formed. The first metal layer 21 may be annealed as described above.

[0276] In the resist layer removing step, as shown in FIG. 19, the resist layer 55 is removed. For example, by using an alkaline stripping solution, the resist land 56 of the resist layer 55 may be removed from the second metal layer 22. After the resist layer 55 is removed, the first metal layer 21 may be polished by chemical mechanical polishing as shown in FIG. 42 described later. In this case, the uniformity of the thickness H3 of the first metal layer 21 can be enhanced. Therefore, the accuracy of the opening dimension S1 (see FIG. 5A) of the through hole 40 can be improved, and the shape accuracy of the through hole 40 can be improved.

[0277] After the mask layer forming step, as a substrate opening forming step, as shown in FIG. 20, a substrate opening 16 is formed in the mask substrate 15. The substrate opening forming step shown in FIG. 20 may be performed in the same manner as the substrate opening forming step shown in FIGS. 9 to 12.

[0278] After the substrate opening forming step, as a mask layer opening forming step, as shown in FIG. 21, a mask layer opening 22d is formed in the second metal layer 22. For example, by etching, the portion of the second metal layer 22 located within the substrate opening 16 in plan view may be removed. Thereby, the mask layer opening 22d can be formed. More specifically, the mask layer opening 22d is formed by etching the main body side layer 25, the substrate side layer 26, and the intermediate layer 27. The etching solution used in the mask layer opening forming step may be an etching solution capable of etching the second metal layer 22 while preventing the first metal layer 21 from being etched. For such an etching solution, for example, a mixed acid aluminum etching solution may be used. The main body side layer 25, the substrate side layer 26, and the intermediate layer 27 may be immersed in a room temperature mixed acid aluminum etching solution, for example. For example, when the thickness of each of the layers 25 to 27 is 100 nm, each of the layers 25 to 27 may be immersed in the mixed acid aluminum etching solution for 2 minutes. The mixed acid aluminum etching solution may be used without diluting the stock solution. As the mixed acid aluminum etching solution, for example, the product named "Mixed Acid Al Etching Solution" manufactured by Kanto Chemical Co., Inc. may be used.

[0279] In this way, the through hole 40 is exposed from the substrate opening 16. Thus, the vapor deposition mask 10 according to this modified example is obtained.

[0280] According to the second modified example in this way, the through hole 40 can be formed regardless of the material type of the first metal layer 21. That is, for example, depending on the material type of the first metal layer 21 such as nickel, laser processing using the laser beam L may become difficult. However, the through hole 40 can be formed in the first metal layer 21 formed by the plating process by the resist layer 55 formed in a pattern corresponding to the through hole 40. Therefore, the through hole 40 can be formed regardless of the material type of the first metal layer 21.

[0281] Next, a third modified example will be described.

[0282] In the above-described embodiment, an example in which the second metal layer 22 includes the main body side layer 25, the substrate side layer 26, and the intermediate layer 27 has been described. However, the present disclosure is not limited to this.

[0283] For example, as shown in FIG. 22A, the second metal layer 22 may include the main body side layer 25 and the substrate side layer 26 and may not include the intermediate layer 27. The second metal layer 22 may have a two-layer structure. The main body side layer 25 and the substrate side layer 26 may be configured as layers having specific purposes. In this case, the main body side layer 25 and the substrate side layer 26 may be directly in contact with each other.

[0284] The main body side layer 25 shown in FIG. 22A may contain a material capable of ensuring adhesion to the first metal layer 21, for example, it may contain copper. The substrate side layer 26 may be a material capable of ensuring adhesion to the mask substrate 15 and may contain a material capable of suppressing erosion by the etching medium used in the substrate etching process. For example, it may contain an aluminum alloy containing neodymium or the like. For example, if the substrate side layer 26 has resistance to the plating solution for forming the first metal layer 21, the main body side layer 25 and the substrate side layer 26 may be composed of such materials. Also, for example, even when the substrate side layer 26 does not have resistance to the plating solution, if it has a thickness that can remain in the first metal layer forming process, the main body side layer 25 and the substrate side layer 26 may be composed of such materials.

[0285] Alternatively, the main body side layer 25 shown in FIG. 22A may contain a material capable of protecting the substrate side layer 26 from the plating solution used in the first metal layer forming process. For example, it may contain titanium. The substrate side layer 26 may be a material capable of ensuring adhesion to the mask substrate 15 and may contain a material capable of suppressing erosion by the etching medium used in the substrate etching process. For example, it may contain an aluminum alloy containing neodymium or the like. For example, if the main body side layer 25 can ensure adhesion to the first metal layer 21, the main body side layer 25 and the substrate side layer 26 may be composed of such materials.

[0286] Alternatively, the main body side layer 25 shown in FIG. 22A may contain a material capable of ensuring adhesion to the first metal layer 21, for example, it may contain copper. The substrate side layer 26 may contain a material having resistance to the plating solution used in the first metal forming process. For example, it may contain titanium. For example, if the substrate side layer 26 is a material capable of ensuring adhesion to the mask substrate 15 and can suppress erosion by the etching medium used in the substrate etching process, the main body side layer 25 and the substrate side layer 26 may be composed of such materials.

[0287] Also, as shown in FIG. 22B, the second metal layer 22 may be composed of a single metal layer. The single metal layer may be composed of a material having adhesion to the first metal layer 21, adhesion to the mask substrate 15, resistance to an etching medium, and resistance to an electroplating solution. In this case, the second metal layer 22 may be composed of the same material as the substrate-side layer 26 described above. In other words, the second metal layer 22 may be composed only of the substrate-side layer 26 described above. In this case, the substrate-side layer 26 is in direct contact with the first metal layer 21 and is in direct contact with the mask substrate 15. By forming the thickness H10 of the substrate-side layer 26 in this case to a desired thickness H10 as shown in FIG. 22B, adhesion to the first metal layer 21, adhesion to the mask substrate 15, and erosion by the etching medium can be suppressed. If the thickness H10 can be ensured, this substrate-side layer 26 may be formed by a sputtering process or may be formed by a vapor deposition process as described later.

[0288] In this case, the thickness H10 of the substrate-side layer 26 may be, for example, 0.6 μm or more, 0.8 μm or more, 1.0 μm or more, or 1.2 μm or more. By setting the thickness H10 to 0.6 μm or more, erosion by the etching medium used in the substrate etching process can be suppressed, and resistance to the plating solution can be ensured. For this reason, the main body-side layer 25 and the intermediate layer 27 can be omitted. Further, the thickness H10 may be, for example, 1.4 μm or less, 1.6 μm or less, 1.8 μm or less, or 2.0 μm or less. By setting the thickness H10 to 2.0 μm or less, the substrate-side layer 26 can be efficiently formed by sputtering. The range of the thickness H10 may be defined by a first group consisting of 0.6 μm, 0.8 μm, 1.0 μm, and 1.2 μm, and / or a second group consisting of 1.4 μm, 1.6 μm, 1.8 μm, and 2.0 μm. The range of the thickness H10 may be defined by a combination of any one of the values included in the above-described first group and any one of the values included in the above-described second group. The range of the thickness H10 may be defined by a combination of any two of the values included in the above-described first group. The range of the thickness H10 may be defined by a combination of any two of the values included in the above-described second group.For example, it may be 0.6 μm or more and 2.0 μm or less, may be 0.6 μm or more and 1.8 μm or less, may be 0.6 μm or more and 1.6 μm or less, may be 0.6 μm or more and 1.4 μm or less, may be 0.6 μm or more and 1.2 μm or less, may be 0.6 μm or more and 1.0 μm or less, may be 0.6 μm or more and 0.8 μm or less, may be 0.8 μm or more and 2.0 μm or less, may be 0.8 μm or more and 1.8 μm or less, may be 0.8 μm or more and 1.6 μm or less, may be 0.8 μm or more and 1.4 μm or less, may be 0.8 μm or more and 1.2 μm or less, may be 0.8 μm or more and 1.0 μm or less, may be 1.0 μm or more and 2.0 μm or less, may be 1.0 μm or more and 1.8 μm or less, may be 1.0 μm or more and 1.6 μm or less, may be 1.0 μm or more and 1.4 μm or less, may be 1.0 μm or more and 1.2 μm or less, may be 1.2 μm or more and 2.0 μm or less, may be 1.2 μm or more and 1.8 μm or less, may be 1.2 μm or more and 1.6 μm or less, may be 1.2 μm or more and 1.4 μm or less, may be 1.4 μm or more and 2.0 μm or less, may be 1.4 μm or more and 1.8 μm or less, may be 1.4 μm or more and 1.6 μm or less, may be 1.6 μm or more and 2.0 μm or less, may be 1.6 μm or more and 1.8 μm or less, or may be 1.8 μm or more and 2.0 μm or less.

[0289] Next, a fourth modification will be described.

[0290] In the above-described embodiment, an example in which the second metal layer 22 is formed on the mask substrate 15 by sputtering has been described. However, the present disclosure is not limited to this, and the main body side layer 25, the substrate side layer 26, and the intermediate layer 27 may be formed by vapor deposition processes such as physical vapor deposition (PVD) or chemical vapor deposition (CVD), respectively.

[0291] Next, a fifth modification will be described.

[0292] In the above-described embodiment, an example in which the through-hole forming step is performed after the substrate opening forming step has been described. However, the present disclosure is not limited to this, and the through-hole forming step may be performed before the substrate opening forming step. In this case, the laser beam L may be irradiated onto the first surface 20a of the mask layer 20. The wall surface 41 of the through-hole 40 may be formed perpendicular to the first surface 20a (the above-described angle θ is 90°). Such a vapor deposition mask 10 may be used in the surface vapor deposition type vapor deposition apparatus described above.

[0293] Next, a sixth modification will be described.

[0294] Also, in the above-described embodiment, an example in which the first metal layer 21 of the mask layer 20 is formed by plating has been described. However, the present disclosure is not limited to this. For example, the first metal layer 21 may be formed and attached to the second metal layer 22 by sputtering. In this case, a metal layer similar to the above-described substrate-side layer 26 may be provided as the second metal layer between the first metal layer 21 formed by sputtering and the mask substrate 15.

[0295] Next, a seventh modification will be described.

[0296] In the above-described embodiment, an example in which the through-hole 40 is formed by irradiating the first metal layer 21 and the second metal layer 22 with the laser beam L has been described. However, the present disclosure is not limited to this, and the through-hole 40 may be formed by etching the first metal layer 21 and the second metal layer 22. In this case, for example, an area not covered by a patterned resist (not shown) may be etched to form a through-hole 40 that penetrates the mask layer 20. In the case of wet etching, as the etching solution, for example, a solution containing ferric chloride solution and hydrochloric acid may be used. The temperature of the etching solution is, for example, 25°C or higher and 80°C or lower. In the case of dry etching, as the etching gas, methane gas (CH4), carbon dioxide gas (CO2), or the like may be used.

[0297] Next, a description will be given of an eighth modification.

[0298] In the above-described embodiment, an example has been described in which the first alignment mark 45 for aligning with the vapor deposition substrate 110 is provided on the substrate frame 17 of the mask substrate 15. However, the present disclosure is not limited to this. For example, as shown in FIG. 23, the mask substrate 15 may include an inner protruding portion 19 that extends inward from the substrate frame 17 in a plan view, and the first alignment mark 45 may be located on the inner protruding portion 19. The inner protruding portion 19 may include a side wall 19a facing the through-hole groups 30 adjacent to each other in the first direction D11 and a side wall 19b facing the through-hole groups 30 adjacent to each other in the second direction D12. In a plan view, the side wall 19a may extend in the second direction D12, and the side wall 19b may extend in the first direction D11. By providing the first alignment mark 45 on the inner protruding portion 19, the first alignment mark 45 can be disposed at a position close to the through-hole groups 30, and the alignment accuracy of the through-holes 40 can be improved.

[0299] Next, a description will be given of a ninth modification.

[0300] In the above-described embodiment, an example has been described in which the second alignment mark 46 for aligning with the vapor deposition substrate 110 is provided at each intersection 29 where the first mask bar 28a and the second mask bar 28b of the mask layer 20 intersect. However, the present disclosure is not limited to this, and as shown in FIG. 24, the second alignment mark 46 may not be provided at all intersections 29. For example, the second alignment mark 46 may be arranged for each of a plurality of through-hole groups 30 in the first direction D11. In FIG. 24, the second alignment mark 46 is arranged for every two through-hole groups 30 in each of the first direction D11 and the second direction D12. More specifically, the second alignment mark 46 may be arranged on one of two adjacent first mask bars 28a in the first direction D11, and the second alignment mark 46 may not be arranged on the other. The second alignment mark 46 may be arranged on one of two adjacent second mask bars 28b in the second direction D12, and the second alignment mark 46 may not be arranged on the other. In this case, the second alignment mark 46 is arranged at a position corresponding to the corner portions of the four through-hole groups 30.

[0301] Although not shown, the second alignment mark 46 may be provided not on the mask layer 20 but on the substrate bars 18a and 18b (see FIGS. 25 and 26) of the mask substrate 15 described later. When the second alignment mark 46 is formed in a concave shape, it may be formed on the second substrate surface 15b of the substrate bars 18a and 18b. In this case, the second alignment mark 46 can be visually recognized by irradiating infrared rays through the vapor deposition substrate 110 and the mask layer 20. The second alignment mark 46 may be arranged at the same position as the second alignment mark 46 shown in FIG. 3 in a plan view, or may be arranged at the same position as the second alignment mark 46 shown in FIG. 24, and is arbitrary. Such a concave second alignment mark 46 may be formed by etching the second substrate surface 15b on the substrate bars 18a and 18b in a substrate etching process.

[0302] Next, a 10th modification will be described.

[0303] In the above-described embodiment, an example has been described in which all the through-hole groups 30 are located within one substrate opening 16 of the mask substrate 15. However, the present disclosure is not limited to this, and the mask substrate 15 may have a plurality of substrate openings 16. For example, as shown in FIGS. 25 and 26, substrate bars 18a and 18b may be provided between adjacent substrate openings 16. The substrate bars 18a and 18b may include a first substrate bar 18a arranged in the first direction D11 and a second substrate bar 18b arranged in the second direction D12. The first substrate bar 18a may extend in the second direction D12. The first substrate bar 18a may overlap with the above-described first mask bar 28a in a plan view. The second substrate bar 18b may extend in the first direction D11. The second substrate bar 18b may overlap with the above-described second mask bar 28b in a plan view. FIG. 26 is a diagram schematically showing a cross section taken along line C-C of FIG. 25. For clarity of the drawing, the number of through-hole groups 30 and the number of through-holes 40 are reduced.

[0304] In the example shown in FIGS. 25 and 26, one corresponding through-hole group 30 (or effective region 23) is located within each substrate opening 16. The substrate openings 16 shown in FIGS. 25 and 26 may have a shape along the contour of one corresponding through-hole group 30 (or corresponding effective region 23). The substrate bars 18a and 18b are connected to the substrate frame 17 and are located between adjacent through-hole groups 30 in a plan view. FIG. 26 shows the first substrate bar 18a, and the first substrate bar 18a extends in a direction perpendicular to the plane of the paper. Both ends of the first substrate bar 18a are continuously connected to the substrate frame 17. Although not shown in FIG. 26, the second substrate bar 18b extends in the left-right direction in FIG. 26. Both ends of the second substrate bar 18b are continuously connected to the substrate frame 17. In this way, in a plan view, the first substrate bar 18a extending in the second direction D12 and the second substrate bar 18b extending in the first direction D11 define a plurality of substrate openings 16.

[0305] In the example shown in FIG. 25, the substrate opening 16 has a substantially rectangular contour in plan view. Here, among the four corners of the contour of the substrate opening 16, the sides 16f (see FIG. 27) extending in the first direction D11 forming the contour of the substrate opening 16 and the sides 16g extending in the second direction D12 may directly intersect to form a corner. However, a minute curved contour formed unintentionally may be interposed between these sides. However, the present disclosure is not limited to this.

[0306] For example, as shown in FIG. 27, the substrate opening 16 may be provided with curved portions 16e at the four corners of the contour of the substantially rectangular substrate opening 16 in plan view. The curved portion 16e is a portion that connects the side 16f extending in the first direction D11 and the side 16g extending in the second direction D12 of the contour of the substrate opening 16 in a curved manner. The curved portion 16e may be formed so as to intentionally form a curved contour. The curved portion 16e may be formed, for example, in an arc shape. Such a curved portion 16e may be included in the substrate opening 16 shown in FIGS. 29 to 31.

[0307] The radius R of the curved portion 16e shown in FIG. 27 may be, for example, 0.3 mm or more, 0.6 mm or more, 0.9 mm or more, or 1.2 mm or more. By setting the radius R to 0.3 mm or more, concentration of stress at the four corners of the substrate opening 16 can be suppressed. Further, the radius R may be, for example, 1.5 mm or less, 2.0 mm or less, 2.5 mm or less, or 3.0 mm or less. By setting the radius R to 3.0 mm or less, it is possible to suppress the number of through holes 40 that can be arranged within the substrate opening 16 from being limited. The range of the radius R may be determined by a first group consisting of 0.3 mm, 0.6 mm, 0.9 mm, and 1.2 mm, and / or a second group consisting of 1.5 mm, 2.0 mm, 2.5 mm, and 3.0 mm. The range of the radius R may be determined by a combination of any one value included in the above-described first group and any one value included in the above-described second group. The range of the radius R may be determined by a combination of any two values included in the above-described first group. The range of the radius R may be determined by a combination of any two values included in the above-described second group.For example, it may be 0.3 mm or more and 3.0 mm or less, may be 0.3 mm or more and 2.5 mm or less, may be 0.3 mm or more and 2.0 mm or less, may be 0.3 mm or more and 1.5 mm or less, may be 0.3 mm or more and 1.2 mm or less, may be 0.3 mm or more and 0.9 mm or less, may be 0.3 mm or more and 0.6 mm or less, may be 0.6 mm or more and 3.0 mm or less, may be 0.6 mm or more and 2.5 mm or less, may be 0.6 mm or more and 2.0 mm or less, may be 0.6 mm or more and 1.5 mm or less, may be 0.6 mm or more and 1.2 mm or less, may be 0.6 mm or more and 0.9 mm or less, may be 0.9 mm or more and 3.0 mm or less, may be 0.9 mm or more and 2.5 mm or less, may be 0.9 mm or more and 2.0 mm or less, may be 0.9 mm or more and 1.5 mm or less, may be 0.9 mm or more and 1.2 mm or less, may be 1.2 mm or more and 3.0 mm or less, may be 1.2 mm or more and 2.5 mm or less, may be 1.2 mm or more and 2.0 mm or less, may be 1.2 mm or more and 1.5 mm or less, may be 1.5 mm or more and 3.0 mm or less, may be 1.5 mm or more and 2.5 mm or less, may be 1.5 mm or more and 2.0 mm or less, may be 2.0 mm or more and 3.0 mm or less, may be 2.0 mm or more and 2.5 mm or less, or may be 2.5 mm or more and 3.0 mm or less.

[0308] Further, as shown in FIG. 28, the substrate opening 16 may have a circular contour in a plan view. In the substrate etching step shown in FIG. 10, the substrate bars 18a and 18b can be formed by leaving the portions of the mask substrate 15 corresponding to the substrate bars 18a and 18b without etching.

[0309] Since the mask substrate 15 has a plurality of substrate openings 16 in this way, the mask layer 20 can be supported by the material (substrate bars 18a and 18b) of the mask substrate 15 remaining between the substrate openings 16. Therefore, the mechanical strength of the vapor deposition mask 10 can be improved.

[0310] Also, when the mask substrate 15 has a plurality of substrate openings 16, as shown in FIGS. 25 to 27, it is not limited that only one through-hole group 30 is located within one substrate opening 16. For example, as shown in FIG. 29, two or more through-hole groups 30 (or effective regions 23) may be located within one substrate opening 16. FIG. 29 shows an example where four through-hole groups 30 are located within one substrate opening 16. Alternatively, not all of the through-holes 40 constituting one through-hole group 30 are limited to being located within one substrate opening 16. For example, one through-hole group 30 may straddle two or more substrate openings 16 in a plan view. For example, as shown in FIG. 30, one through-hole 40 may be located within one substrate opening 16. In the example shown in FIG. 30, a substrate opening 16 is provided for each through-hole 40. Also, as shown in FIG. 31, two or more through-holes 40 may be located within one substrate opening 16. The example shown in FIG. 31 shows an example where two through-holes 40 are located within one substrate opening 16.

[0311] Next, a first modified example will be described.

[0312] In the above-described embodiment, an example in which the vapor deposition mask 10 includes the mask layer 20 and the mask substrate 15 has been described. However, the present disclosure is not limited to this. For example, as shown in FIGS. 32 and 33, the mask substrate 15 may be supported by the frame 201. In this case, the vapor deposition mask 10 and the frame 201 may constitute a vapor deposition mask 200 with a frame.

[0313] More specifically, the vapor deposition mask 200 with a frame includes a vapor deposition mask 10 and a frame 201 that supports the mask substrate 15 of the vapor deposition mask 10. The frame 201 may be attached to the mask substrate 15 of the vapor deposition mask 10 for the purpose of being gripped, for example, when moving the vapor deposition mask 10, when handling the vapor deposition mask 10. By doing so, the vapor deposition mask 10 can be handled while gripping the frame 201, and damage to the vapor deposition mask 10 can be suppressed. As a result, the handling of the vapor deposition mask 10 can be improved.

[0314] The frame 201 may include a first frame surface 201a and a second frame surface 201b. The first frame surface 201a faces the mask substrate 15 and faces the second substrate surface 15b of the mask substrate 15. The second frame surface 201b is located on the side opposite to the first frame surface 201a. The first frame surface 201a is connected to the substrate frame 17 of the mask substrate 15. In a plan view, the frame 201 does not overlap the substrate opening 16. In a plan view, at least a part of the frame 201 extends outward beyond the outer edge 15c of the mask substrate 15. Thereby, a region for gripping the frame 201 when handling the vapor deposition mask 10 is formed. In the example shown in FIG. 32, the frame 201 extends outward beyond the outer edge 15c of the mask substrate 15 as a whole.

[0315] The frame 201 may include a glass material or a metal material. The glass material may be quartz glass, borosilicate glass, non-alkali glass, soda glass, or the like. The metal material may be an Invar material, aluminum, or stainless steel such as SUS430 or SUS304. By using such a material for the frame 201, the rigidity of the frame 201 can be made higher than that of the mask substrate 15. The frame 201 may include a silicon or resin material. The material of the frame 201 may be determined so that the frame 201 has the required rigidity in consideration of the gripping force of an operator handling the vapor deposition mask 200 with a frame or a robot hand.

[0316] The coefficient of thermal expansion of the frame 201 may be equal to or close to the coefficient of thermal expansion of the mask substrate 15. By this, when the vapor deposition mask 200 with a frame is heated, the elongation rates of the frame 201 and the mask substrate 15 can be made comparable. As a result, breakage of the mask substrate 15 can be suppressed. Also, the positional accuracy of the through holes 40 can be improved, and the vapor deposition accuracy can be improved. More specifically, the absolute value of the difference between the coefficient of thermal expansion of the frame 201 and the coefficient of thermal expansion of the mask substrate 15 may be 15 ppm / °C or less, may be 10 ppm / °C or less, or may be 5.0 ppm / °C or less. The material of the frame 201 may be a material with high thermal conductivity. In this case, the vapor deposition mask 10 can be efficiently cooled.

[0317] In the illustrated example, the frame 201 is formed in an annular shape. The frame 201 can be formed in an annular shape at a portion located outside the outer edge 15c of the mask substrate 15 in a plan view. By this, breakage of the substrate frame 17 of the mask substrate 15 can be effectively suppressed when handling the vapor deposition mask 10. More specifically, a frame opening 202 that extends from the first frame surface 201a to the second frame surface 201b and penetrates the frame 201 is formed at the center of the frame 201. In the illustrated example, the planar shape of the frame opening 202 is similar to the planar shape of the outer edge 15c of the mask substrate 15. In a plan view, the frame opening 202 overlaps each substrate opening 16 of the mask substrate 15. In the illustrated example, the mask substrate 15 includes the first substrate bar 18a and the second substrate bar 18b as described above in the same manner as the examples shown in FIGS. 25 and 26, and a plurality of substrate openings 16 are partitioned by the respective substrate bars 18a, 18b. In a plan view, the frame opening 202 overlaps the first substrate bar 18a and the second substrate bar 18b of the mask substrate 15.

[0318] The planar shape of the outer edge 201c of the frame 201 is arbitrary. In the illustrated example, in a plan view, the outer edge 201c of the frame 201 is formed in a rectangular shape, but may be formed in other polygonal shapes or circular shapes.

[0319] In the above-described 11th modification example, an example has been described in which the mask substrate 15 of the vapor deposition mask 10 according to the 10th modification example shown in FIGS. 25 and 26 is supported by the frame 201. However, the present disclosure is not limited to this. The mask substrate 15 of the vapor deposition mask 10 shown in FIG. 3 may be supported by the frame 201, and the mask substrate 15 of the vapor deposition mask 10 shown in other modification examples may be supported by the frame 201. For example, the mask layer opening 22d may not be formed in the second metal layer 22 shown in FIG. 33, and the second metal layer 22 may include the opening region portion 22b (see FIG. 3).

[0320] Next, a 12th modification example will be described.

[0321] In the above-described embodiment, an example has been described in which, in plan view, the outer edge 21c of the first metal layer 21 is located at a position overlapping the outer edge 22c of the second metal layer 22. However, the present disclosure is not limited to this. For example, as shown in FIG. 34, the outer edge 21c of the first metal layer 21 may be located inside the outer edge 22c of the second metal layer 22. In other words, the second metal layer 22 extends outward beyond the outer edge 21c of the first metal layer 21 and is exposed. Thereby, a step can be formed by the first metal layer 21 and the second metal layer 22, and the thickness H3 (see FIG. 3) of the first metal layer 21 can be easily measured. In plan view, a part of the second metal layer 22 may extend outward beyond the outer edge 21c of the first metal layer 21. In this case, a step can be formed at a part of the outer edge 21c of the first metal layer 21 in plan view. However, in plan view, the second metal layer 22 may extend outward beyond the outer edge 21c of the first metal layer 21 as a whole. In this case, a step can be formed over the entire circumference of the outer edge 21c of the first metal layer 21 in plan view.

[0322] In the first metal layer forming step of forming such a first metal layer 21, a resist layer (not shown) may be previously formed on the surface of the first metal layer 21 opposite to the mask substrate 15 of the second metal layer 22. This resist layer is located in a region adjacent to the outer edge 22c of the second metal layer 22. Thereby, the first metal layer 21 including the above-described outer edge 21c can be formed.

[0323] Since the outer edge 21c of the first metal layer 21 is located inside the outer edge 22c of the second metal layer 22 in this way, the thickness H3 of the first metal layer 21 can be easily measured.

[0324] In the above-described 12th modification, an example has been described in which the outer edge 21c of the first metal layer 21 of the vapor deposition mask 10 according to the 10th modification shown in FIGS. 25 and 26 is located inside the outer edge 22c of the second metal layer 22. However, the present disclosure is not limited to this. For example, the outer edge 21c of the first metal layer 21 of the vapor deposition mask 10 shown in FIG. 3 may be located inside the outer edge 22c of the second metal layer 22, and the outer edge 21c of the first metal layer 21 of the vapor deposition mask 10 shown in other modifications may be located inside the outer edge 22c of the second metal layer 22. For example, the mask layer opening 22d may not be formed in the second metal layer 22 shown in FIG. 34, and the second metal layer 22 may include the opening region portion 22b (see FIG. 3).

[0325] Next, a 13th modification will be described.

[0326] In the above-described embodiment, an example has been described in which the mask bars 28a and 28b of the first metal layer 21 are formed on the first substrate bar 18a and the second substrate bar 18b of the mask substrate 15. However, the present disclosure is not limited to this. For example, as shown in FIGS. 35 and 36, metal grooves 210a and 210b may be formed in the mask bars 28a and 28b of the first metal layer 21. The metal grooves 210a and 210b may penetrate the first metal layer 21. The metal grooves 210a and 210b may not be formed in the second metal layer 22.

[0327] As shown in FIGS. 35 and 36, a plurality of first metal grooves 210a and a plurality of second metal grooves 210b may be formed in the first metal layer 21. The first metal grooves 210a may be formed in the first mask bar 28a and may be located at positions overlapping the first substrate bar 18a in plan view. The first metal grooves 210a may extend in the second direction D12 and may be arranged in the first direction D11. The second metal grooves 210b may be formed in the second mask bar 28b and may be located at positions overlapping the second substrate bar 18b in plan view. The second metal grooves 210b may extend in the first direction D11 and may be arranged in the second direction D12.

[0328] In the example shown in FIGS. 35 and 36, the first metal layer 21 may include a plurality of metal islands 211. The metal island 211 is an example of a main body island. The metal islands 211 may be partitioned by the first metal grooves 210a and the second metal grooves 210b. The metal islands 211 may be formed for each through-hole group 30 (or effective region 23). One through-hole group 30 may be formed in one metal island 211. Alternatively, two or more through-hole groups 30 may be located in one metal island 211. The metal islands 211 may be formed in a rectangular shape in plan view. In the example shown in FIG. 35, a plurality of metal islands 211 are formed on the second metal layer 22. The first metal layer 21 may not be formed further outside the outermost metal island 211 among the plurality of metal islands 211 in plan view. In this case, the second metal layer 22 is exposed, and a step similar to that in FIG. 34 is formed by the first metal layer 21 and the second metal layer 22.

[0329] The metal grooves 210a and 210b may be formed in the first metal layer 21 by etching. Alternatively, the metal grooves 210a and 210b may be formed in the first metal layer 21 by irradiating laser light.

[0330] In this way, by forming the metal grooves 210a and 210b in the first metal layer 21, the first metal layer 21 can be segmented. Therefore, the warpage generated in the first metal layer 21 can be segmented, and the generation of warpage of the vapor deposition mask 10 can be suppressed.

[0331] In the 13th modification example described above, the example of forming the metal grooves 210a and 210b in the first metal layer 21 of the vapor deposition mask 10 according to the 10th modification example shown in FIGS. 25 and 26 has been described. However, the present disclosure is not limited to this. For example, the metal grooves 210a and 210b may be formed in the first metal layer 21 of the vapor deposition mask 10 shown in FIG. 3, or the metal grooves 210a and 210b may be formed in the first metal layer 21 of the vapor deposition mask 10 shown in other modification examples. For example, in the second metal layer 22 shown in FIG. 36, the mask layer opening 22d may not be formed, and the second metal layer 22 may include the opening region portion 22b (see FIG. 3).

[0332] Next, a 14th modification example will be described.

[0333] In the 13th modification example described above, the example in which the metal grooves 210a and 210b are formed in the first metal layer 21 has been described. However, the present disclosure is not limited to this. For example, as shown in FIGS. 37 and 38, a mask insulating layer 220 may be formed in the metal grooves 210a and 210b.

[0334] More specifically, the mask layer 20 of the vapor deposition mask 10 shown in FIGS. 37 and 38 may include a mask insulating layer 220. The mask insulating layer 220 is located on the side of the first surface 20a of the mask layer 20. The mask insulating layer 220 may be a layer forming the first surface 20a. The mask insulating layer 220 may be located between two adjacent metal islands 211. In other words, the mask insulating layer 220 may be located between two adjacent via hole groups 30 (or effective region 23). The mask insulating layer 220 may penetrate the first metal layer 21.

[0335] More specifically, the mask insulating layer 220 is formed in each of the first metal grooves 210a of the first metal layer 21 and is also formed in each of the second metal grooves 210b. In other words, the mask insulating layer 220 is formed between two adjacent metal islands 211 described above. The mask insulating layer 220 is also formed further outside the outermost metal island 211 among the plurality of metal islands 211 in a plan view. In this way, the mask insulating layer 220 is formed around the metal islands 211. The mask insulating layer 220 may be formed continuously without being segmented.

[0336] The thickness H11 of the mask insulating layer 220 may be the same as the above-described thickness H3 (see FIG. 3) of the first metal layer 21, or the difference from the thickness H3 may be 1.0 μm or less.

[0337] The mask insulating layer 220 may have properties different from those of the first metal layer 21 with respect to stress. For example, when the first metal layer 21 applies tensile stress to the mask substrate 15, the mask insulating layer 220 may be configured to apply compressive stress to the mask substrate 15. In this case, the mask insulating layer 220 can at least partially cancel out the force exerted by the first metal layer 21 on the mask substrate 15. Therefore, warping of the vapor deposition mask 10 can be suppressed. The material of the mask insulating layer 220 may have insulating properties. For example, the mask insulating layer 220 may contain an oxide having insulating properties. The oxide may be, for example, silicon oxide or silicon dioxide.

[0338] Next, a method for manufacturing the vapor deposition mask 10 shown in FIGS. 37 and 38 will be described.

[0339] First, a mask substrate 15 on which a second metal layer 22 is formed is prepared by the second metal layer forming step shown in FIG. 7 described above.

[0340] Subsequently, as shown in FIG. 39, as an insulating layer formation step, a mask insulating layer 220 is formed on the second metal layer 22. The mask insulating layer 220 may be formed over the entire surface of the second metal layer 22 on the side opposite to the mask substrate 15. The mask insulating layer 220 may be formed by chemical vapor deposition. For example, the mask insulating layer 220 is formed by chemical vapor deposition using tetraethyl orthosilicate Si(OC2H5)4 as a raw material. Tetraethyl orthosilicate is also referred to as TEOS.

[0341] After the insulating layer formation step, as an insulating opening formation step, as shown in FIG. 40, a plurality of insulating openings 221 are formed in the mask insulating layer 220. The plurality of insulating openings 221 may be arranged in the first direction D11 and the second direction D12. In a plan view, the plurality of insulating openings 221 have a contour corresponding to the metal islands 211 of the first metal layer 21 described above. The planar shape of the contour of the insulating opening 221 may be rectangular. Although not shown, the four corners of the contour of the insulating opening 221 may be curved. The contour of the insulating opening 221 may be other shapes such as circular. The contour of the insulating opening 221 may be configured to surround the contour of the substrate opening 16 formed in a later step. The planar shape of the contour of the insulating opening 221 may be similar to the planar shape of the contour of the substrate opening 16.

[0342] The mask insulating layer 220 may include an insulating frame body 222 having a planar shape along the outer edge 220c of the mask insulating layer 220, and insulating bars 223a and 223b defining the contour of the insulating opening 221. The insulating frame body 222 is an example of an insulating body. An insulating opening 221 may be defined inside the insulating frame body 222.

[0343] The insulating bars 223a and 223b may include a first insulating bar 223a arranged in the first direction D11 and a second insulating bar 223b arranged in the second direction D12. The first insulating bar 223a may extend in the second direction D12. The first insulating bar 223a may overlap with the above-described first substrate bar 18a in a plan view. The second insulating bar 223b may extend in the first direction D11. The second insulating bar 223b may overlap with the above-described second substrate bar 18b in a plan view. The insulating bars 223a and 223b may penetrate the first metal layer 21.

[0344] The insulating bars 223a and 223b are connected to the insulating frame 222. The insulating bars 223a and 223b are located between adjacent insulating openings 221 in a plan view. FIG. 38 shows the first insulating bar 223a, and the first insulating bar 223a extends in a direction perpendicular to the plane of the paper. Both ends of the first insulating bar 223a are continuously connected to the insulating frame 222. Although not shown in FIG. 38, a second insulating bar 223b extends in the left-right direction in FIG. 38. Both ends of the second insulating bar 223b are continuously connected to the insulating frame 222. In this way, in a plan view, a plurality of insulating openings 221 are defined by the first insulating bar 223a extending in the second direction D12 and the second insulating bar 223b extending in the first direction D11.

[0345] As shown in FIG. 40, the mask insulating layer 220 may include a plurality of insulating islands 224 located in the insulating openings 221. The above-described through holes 40 of the mask layer 20 are formed at the positions of the insulating islands 224. The method of forming the insulating openings 221 in the mask insulating layer 220 is not particularly limited. For example, the insulating openings 221 may be formed by dry etching using an etching gas. The dry etching may be reactive ion etching.

[0346] After the insulating layer formation step, as a first metal layer formation step, as shown in FIG. 41, a first metal layer 21 is formed in the insulating opening 221. More specifically, the first metal layer 21 is formed on the surface of the second metal layer 22 opposite to the mask substrate 15. The first metal layer 21 may be formed by plating in the same manner as the first metal layer formation step shown in FIGS. 8 and 18. In this case, the components of the plating solution are deposited on the portion of the insulating opening 221 of the mask insulating layer 220 where the insulating island 224 is not formed. The metal island 211 of the first metal layer 21 is formed on the second metal layer 22 by the components deposited in this way. Through holes 40 are formed in the metal island 211 formed in this way so as to correspond to the insulating islands 224. That is, in the first metal layer formation step, the through holes 40 are formed. The metal island 211 of the first metal layer 21 may protrude upward from the insulating opening 221 in the thickness direction D2 of the mask layer 20.

[0347] After the first metal layer 21 is formed, the first metal layer 21 may be annealed in the same manner as the first metal layer formation step shown in FIG. 8.

[0348] After the first metal layer formation step, as a polishing step, as shown in FIG. 42, the first metal layer 21 may be polished by chemical mechanical polishing. The polishing step may be performed until the polishing surface of the polishing tool reaches the surface of the mask insulating layer 220 opposite to the second metal layer 22 in the thickness direction D2. As a result, the surface of the first metal layer 21 opposite to the second metal layer 22 can be positioned on the same plane as the surface of the mask insulating layer 220 opposite to the second metal layer 22. The uniformity of the thickness H3 of the first metal layer 21 can be increased, and the flatness of the first surface 20a of the mask layer 20 can be increased.

[0349] After the polishing process, as an insulating layer removal process, a part of the mask insulating layer 220 is removed. In the insulating layer removal process, as a first mask protection layer formation process, as shown in FIG. 43, a first mask protection layer 225 covering the insulating frame 222 and the insulating bars 223a and 223b of the mask insulating layer 220 may be formed. The first mask protection layer 225 may not cover the insulating island 224. The first mask protection layer 225 may not cover the first metal layer 21 surrounding the plurality of insulating islands 224.

[0350] The first mask protection layer 225 may have resistance to an etching solution for removing the mask insulating layer 220. For example, when the etching solution contains buffered hydrofluoric acid, the first mask protection layer 225 may contain a resin having resistance to hydrofluoric acid. For example, the first mask protection layer 225 may contain a photoresist having resistance to hydrofluoric acid. The photoresist may contain polyimide or the like. The buffered hydrofluoric acid solution may be a solution containing hydrofluoric acid and ammonium fluoride.

[0351] Subsequently, in the insulating layer removal process, the mask insulating layer 220 is immersed in an etching solution such as a buffered hydrofluoric acid solution. As a result, as shown in FIG. 44, a plurality of insulating islands 224 not covered by the first mask protection layer 225 are removed. Thereafter, the first mask protection layer 225 may be removed.

[0352] After the insulating layer removal process, as a substrate opening formation process, a substrate opening 16 is formed in the mask substrate 15. In the substrate opening formation process, as shown in FIG. 45, a resist layer 50 may be formed on the second substrate surface 15b of the mask substrate 15 in the same manner as the resist layer formation process shown in FIG. 9. As shown in FIG. 45, as a second mask protection layer formation process, a second mask protection layer 226 covering the first metal layer 21 and the mask insulating layer 220 may be formed.

[0353] Subsequently, as a substrate opening forming step, as shown in FIG. 46, the mask substrate 15 may be etched in the same manner as the substrate etching step shown in FIG. 10 to form a substrate opening 16.

[0354] After the substrate opening forming step, as a mask layer opening forming step, as shown in FIG. 47, a mask layer opening 22d is formed in the second metal layer 22. In the mask layer opening forming step, the second metal layer 22 may be etched in the same manner as the mask layer opening forming step shown in FIG. 21 to form a mask layer opening 22d.

[0355] After the mask layer opening forming step, as a second protective layer removing step, as shown in FIG. 48, the resist layer 50 and the second mask protective layer 226 may be removed.

[0356] In this way, the vapor deposition mask 10 shown in FIGS. 37 and 38 is obtained.

[0357] The first metal layer 21 may be formed on the mask substrate 15 in an environment at a temperature higher than room temperature. For example, in an environment at a temperature higher than room temperature, an electroplating step or an annealing step is performed. When the temperatures of the mask substrate 15 and the first metal layer 21 drop to room temperature, shrinkage occurs in the mask substrate 15 and the first metal layer 21. When the coefficient of thermal expansion of the first metal layer 21 is larger than that of the mask substrate 15, the amount of shrinkage of the first metal layer 21 is larger than that of the mask substrate 15. Therefore, the first metal layer 21 applies a tensile stress to the mask substrate 15.

[0358] The mask insulating layer 220 is formed on the mask substrate 15 in an environment at a temperature higher than room temperature. For example, in an environment at a temperature higher than room temperature, a chemical vapor deposition step is performed. When the temperatures of the mask substrate 15 and the mask insulating layer 220 drop to room temperature, shrinkage occurs in the mask substrate 15 and the mask insulating layer 220. When the coefficient of thermal expansion of the mask insulating layer 220 is smaller than that of the mask substrate 15, the amount of shrinkage of the mask insulating layer 220 is smaller than that of the mask substrate 15. Therefore, the mask insulating layer 220 applies a compressive stress to the mask substrate 15.

[0359] In the vapor deposition mask 10 shown in FIGS. 37 and 38, a first metal layer 21 and a mask insulating layer 220 are formed on a mask substrate 15. Therefore, the compressive stress applied by the mask insulating layer 220 to the mask substrate 15 can at least partially cancel out the tensile stress applied by the first metal layer 21 to the mask substrate 15. As a result, warping of the vapor deposition mask 10 can be suppressed.

[0360] In the first metal layer forming step shown in FIG. 41 described above, the first metal layer 21 may be formed by a process other than plating. For example, the first metal layer 21 may be formed by a physical film forming method. The physical film forming method may be a sputtering method, a vapor deposition method, an ion plating method, or the like. In the physical film forming step, the first metal layer 21 may be formed not only on the insulating opening 221 but also on the insulating frame 222 of the mask insulating layer 220 and on the insulating bars 223a and 223b.

[0361] An oxide film may be formed on the first substrate surface 15a and the second substrate surface 15b of the mask substrate 15 prepared before the insulating layer forming step shown in FIG. 39 described above. The oxide film may be formed by subjecting the mask substrate 15 to a thermal oxidation treatment. The thermal oxidation treatment is a treatment for oxidizing the first substrate surface 15a and the second substrate surface 15b of the mask substrate 15 by heating the mask substrate 15. The oxide film formed on the second substrate surface 15b may be removed after the first metal layer forming step.

[0362] Next, a 15th modification will be described.

[0363] In the 14th modification described above, an example in which the mask insulating layer 220 includes the first insulating bar 223a and the second insulating bar 223b has been described. However, the present disclosure is not limited to this. For example, as shown in FIG. 49, the mask insulating layer 220 may not include the first insulating bar 223a and the second insulating bar 223b. The mask insulating layer 220 may not include the insulating frame 222, or may include the insulating frame 222.

[0364] More specifically, as shown in FIG. 49, stud vias 42 may be formed in the first metal layer 21 on the substrate bars 18a and 18b of the mask substrate 15. The stud vias 42 may not overlap the substrate opening 16 of the mask substrate 15 in a plan view. The stud vias 42 may be located between two adjacent via groups 30 (or effective regions 23). The stud vias 42 may be configured in the same manner as the vias 40. The stud vias 42 may penetrate the first metal layer 21.

[0365] The mask insulating layer 220 may include a plurality of insulating stud islands 227 located in the corresponding stud vias 42 described above. The insulating stud islands 227 may be embedded in the stud vias 42. The insulating stud islands 227 may be located between two adjacent metal islands 211. The insulating stud islands 227 may penetrate the first metal layer 21.

[0366] The insulating stud islands 227 are formed at positions corresponding to the substrate bars 18a and 18b of the mask substrate 15 in the insulating layer forming step shown in FIG. 40 described above. The insulating stud islands 227 may have the same shape as the insulating islands 224 described above. In the first mask protective layer forming step shown in FIG. 43, the first mask protective layer 225 is formed on the insulating stud islands 227. Thereafter, by performing the steps shown in FIGS. 44 to 48, the deposition mask 10 having the insulating stud islands 227 formed on the substrate bars 18a and 18b is obtained.

[0367] In this modification, stud vias 42 are formed in the first metal layer 21 on the substrate bars 18a and 18b of the mask substrate 15. As a result, the region between two adjacent via groups 30 in the first metal layer 21 can be formed in the same structure as the first metal layer 21 within the via groups 30 (or effective regions 23). Therefore, the uniformity of the structure of the first metal layer 21 can be enhanced. As a result, the uniformity of the plating feed current can be enhanced, and the uniformity of the thickness H3 of the first metal layer 21 can be enhanced. In the polishing step described above, the uniformity of the chemical mechanical polishing of the first metal layer 21 can be enhanced.

[0368] Next, a 16th modification will be described.

[0369] In the 14th modification described above, an example in which the first metal layer 21 includes a plurality of metal islands 211 has been described. However, the present disclosure is not limited to this. For example, as shown in FIGS. 50 and 51, the first metal layer 21 may include dummy metal islands 230.

[0370] More specifically, in the examples shown in FIGS. 50 and 51, the first metal layer 21 includes a plurality of metal islands 211 and a plurality of dummy metal islands 230. The through holes 40 located in the metal islands 211 overlap the substrate openings 16. The dummy metal islands 230 are an example of dummy main body islands. In plan view, the dummy metal islands 230 are located between the metal islands 211 and the outer edge 15c of the mask substrate 15. The dummy metal islands 230 may be located at positions that do not overlap the substrate openings 16 of the mask substrate 15 in plan view. The dummy metal islands 230 may overlap the substrate frame 17 of the mask substrate 15.

[0371] Dummy through holes 43 penetrating the first metal layer 21 may be formed in the dummy metal islands 230. The dummy through holes 43 do not have to overlap the substrate openings 16 of the mask substrate 15 in plan view and may overlap the substrate frame 17.

[0372] In plan view, the dummy metal islands 230 may be separated from adjacent metal islands 211. A mask insulating layer 220 may be located between the dummy metal islands 230 and the metal islands 211. However, the adjacent dummy metal islands 230 and metal islands 211 may be connected and may be formed continuously.

[0373] When polishing the first metal layer 21 by chemical mechanical polishing as in the above-described polishing process shown in FIG. 42, the thickness H3 of the first metal layer 21 after polishing may vary depending on the position. For example, when a plurality of metal islands 211 are formed on the mask substrate 15, the thickness of the metal island 211 close to the outer edge 15c of the mask substrate 15 may be larger than the thickness of the metal island 211 close to the center point of the mask substrate 15. In other words, the metal island 211 close to the outer edge 15c of the mask substrate 15 may not be polished sufficiently.

[0374] In this modification, dummy metal islands 230 are located outside the metal islands 211 in a plan view. As a result, the region that is not polished sufficiently is more likely to occur in the dummy metal islands 230 than in the metal islands 211. Therefore, according to this modification, it is possible to suppress insufficient polishing of the metal islands 211. Further, in the above-described first metal layer forming step, the first metal layer 21 can also be formed in a region overlapping the substrate frame 17 of the mask substrate 15. Therefore, the first metal layer 21 can be formed in a wide region on the surface of the second metal layer 22 opposite to the mask substrate 15. In this case, the uniformity of the power supply current for plating can be enhanced, and the uniformity of the thickness H3 of the first metal layer 21 can be enhanced. In the above-described polishing process, the uniformity of chemical mechanical polishing of the first metal layer 21 can be enhanced.

[0375] Although some modifications to the above-described embodiments have been described, of course, it is also possible to appropriately combine and apply a plurality of modifications.

Claims

1. a mask substrate comprising silicon; a mask layer having a first surface and a second surface located opposite the first surface and facing the mask substrate; two or more through holes passing through the mask layer; the mask substrate has two or more substrate openings; the mask layer includes a mask body layer forming the first surface and a mask intermediate layer positioned between the mask body layer and the mask substrate; the mask body layer includes a metal material; the mask layer has two or more through-hole groups each composed of two or more of the through-holes, In a plan view, the deposition mask has two or more groups of through holes located within each of the substrate openings.

2. An evaporation mask as described in claim 1, wherein the thickness of the mask intermediate layer is smaller than the thickness of the mask main layer.

3. The mask intermediate layer includes a substrate-side layer including gold, aluminum, chromium, nickel, titanium, titanium nitride, an aluminum alloy including neodymium, silicon oxide, or silicon dioxide; The deposition mask according to claim 1 , wherein the substrate-side layer is in contact with the mask body layer and the mask substrate.

4. The mask intermediate layer includes a body-side layer facing the mask body layer and a substrate-side layer facing the mask substrate, The deposition mask according to claim 1 , wherein the main body side layer and the substrate side layer are made of different metal materials.

5. The deposition mask described in claim 4, wherein the substrate side layer includes gold, aluminum, chromium, nickel, titanium, titanium nitride, an aluminum alloy containing neodymium, silicon oxide or silicon dioxide.

6. The deposition mask described in claim 4, wherein the main body side layer contains titanium, copper, nickel or gold.

7. The mask intermediate layer includes an intermediate layer located between the substrate side layer and the body side layer, The deposition mask according to claim 4 , wherein the intermediate layer is made of a material different from that of the main body-side layer and the substrate-side layer.

8. The deposition mask described in claim 7, wherein the intermediate layer contains titanium, titanium nitride, aluminum, an aluminum alloy containing neodymium, silicon oxide, silicon dioxide, nickel, copper, chromium or gold.

9. An evaporation mask as described in claim 1 or 2, wherein the metal material of the mask main body layer is a magnetic metal material.

10. The mask substrate having a substrate body defining the substrate opening; the mask intermediate layer includes a main body region located between the mask main body layer and the substrate main body, and an opening region located within the substrate opening in a plan view; The deposition mask according to claim 1 , wherein the through-holes penetrate the mask body layer and the opening regions.

11. An evaporation mask as described in Claim 10, wherein the opening dimension in a predetermined direction of the through hole in the second surface is larger than the opening dimension in the predetermined direction of the through hole in the first surface.

12. The mask substrate having a substrate body defining the substrate opening; the mask intermediate layer includes a body region portion located between the mask body layer and the substrate body, and a mask layer opening formed along the substrate opening in a plan view; The deposition mask according to claim 1 , wherein the through-holes penetrate the mask body layer.

13. An evaporation mask as described in Claim 12, wherein the opening dimension in a predetermined direction of the through hole on the surface of the mask main layer facing the mask substrate is larger than the opening dimension in the predetermined direction of the through hole on the first surface.

14. The substrate opening is formed in a rectangular shape in a plan view, The deposition mask according to claim 1 , wherein curved portions are provided at four corners of the outline of the substrate opening in a plan view.

15. An evaporation mask as described in claim 1 or 2, wherein a first alignment mark is provided on the surface of the mask substrate opposite the mask layer.

16. The mask substrate has a substrate body that defines the substrate opening, and an inner protrusion that protrudes inward from the substrate body in a plan view, The deposition mask according to claim 15 , wherein the first alignment mark is located on the inner protrusion.

17. An evaporation mask as described in claim 15, wherein a second alignment mark is provided at a position closer to the through hole than the first alignment mark.

18. The mask layer has mask bars provided between adjacent groups of the through holes, The deposition mask according to claim 17 , wherein the second alignment mark is located on the mask rail.

19. The mask bars include a first mask bar and a second mask bar extending in directions perpendicular to each other in a plan view, The deposition mask according to claim 18 , wherein the second alignment mark is located at an intersection where the first mask bar and the second mask bar intersect.

20. The mask body layer includes two or more body islands; The deposition mask according to claim 1 or 2, wherein a groove penetrating the mask body layer is located between two adjacent body islands.

21. The mask layer has a mask insulating layer forming the first surface, The deposition mask according to claim 1 , wherein the mask insulating layer is located between two adjacent groups of the through holes.

22. An evaporation mask as described in claim 1 or 2, wherein the mask body layer includes a dummy body island located at a position that does not overlap with the substrate opening in a planar view.

23. The deposition mask according to claim 1 or 2, a frame that supports the mask substrate of the deposition mask.

24. A substrate preparation step of preparing a mask substrate comprising silicon; a mask layer forming step of forming a mask layer on the mask substrate, the mask layer having a first surface and a second surface located on the opposite side to the first surface and facing the mask substrate; a substrate aperture forming step of forming two or more substrate apertures in the mask substrate; a through-hole forming step of forming two or more through-holes penetrating the mask layer, the mask layer forming step includes a mask intermediate layer forming step of forming a mask intermediate layer on a surface of the mask substrate facing the mask layer, and a mask main body layer forming step of forming a mask main body layer on a surface of the mask intermediate layer opposite to the mask substrate, the mask body layer includes a metal material; the mask layer has two or more through-hole groups each composed of two or more of the through-holes, The method for manufacturing a vapor deposition mask, wherein two or more of the through-hole groups are located within each of the substrate openings in plan view.

25. A method for manufacturing a deposition mask as described in Claim 24, wherein in the through hole forming process, the through hole is formed by irradiating laser light onto the mask layer.

26. The through-hole forming step is performed after the substrate opening forming step, The method for manufacturing a deposition mask according to claim 25 , wherein the laser light is irradiated onto the second surface of the mask layer through the substrate opening.

27. ​​A method for manufacturing a deposition mask as described in claim 25 or 26, wherein the laser light is femtosecond laser light.

28. A method for manufacturing a vapor deposition mask as described in claim 25 or 26, wherein in the through-hole forming process, the laser light is irradiated onto the mask layer through a mask hole corresponding to the through-hole of the photomask.

29. The photomask has a plurality of the mask holes, The method for manufacturing a deposition mask according to claim 28 , wherein in the through-hole forming step, the laser light is irradiated onto the mask layer through the plurality of mask holes of the photomask.

30. The mask substrate has a substrate body that defines the substrate opening; the mask intermediate layer includes a main body region located between the mask main body layer and the substrate main body, and an opening region located within the substrate opening in a plan view; The method for manufacturing a deposition mask according to claim 24 or 25, wherein in the through-hole forming step, the through-hole is formed so as to penetrate the mask body layer and the opening region.

31. A method for manufacturing a deposition mask as described in Claim 30, wherein the opening dimension in a predetermined direction of the through hole in the second surface is larger than the opening dimension in the predetermined direction of the through hole in the first surface.

32. After the substrate opening forming step, a mask layer opening forming step is provided in the mask intermediate layer, the mask layer opening being formed along the substrate opening in a plan view; The method for manufacturing a deposition mask according to claim 24 or 25, wherein in the through hole forming step, the through hole is formed so as to penetrate the mask body layer.

33. A method for manufacturing a vapor deposition mask as described in Claim 32, wherein the opening dimension in a predetermined direction of the through hole on the surface of the mask main layer facing the mask substrate is larger than the opening dimension in the predetermined direction of the through hole on the first surface.

34. A substrate preparation step of preparing a mask substrate comprising silicon; a mask layer forming step of forming a mask layer on the mask substrate, the mask layer having a first surface and a second surface located on the opposite side to the first surface and facing the mask substrate; a substrate aperture forming step of forming two or more substrate apertures in the mask substrate; a mask layer opening forming step of forming a mask layer opening in the mask layer along the substrate opening in a plan view, the mask layer forming step includes a mask intermediate layer forming step of forming a mask intermediate layer on a surface of the mask substrate facing the mask layer, and a mask main body layer forming step of forming a mask main body layer on a surface of the mask intermediate layer opposite the mask substrate and forming two or more through holes penetrating the mask main body layer, In the mask layer opening forming step, the mask layer opening is formed in the mask intermediate layer, the mask body layer includes a metal material; the mask layer has two or more through-hole groups each composed of two or more of the through-holes, The method for manufacturing a vapor deposition mask, wherein two or more of the through-hole groups are located within each of the substrate openings in plan view.

35. A method for manufacturing a vapor deposition mask as described in Claim 34, wherein in the mask main layer formation process, a resist layer is formed in a pattern on the side of the mask intermediate layer opposite the mask substrate so as to correspond to the through holes.

36. A method for manufacturing a vapor deposition mask as described in claim 34 or 35, wherein the opening dimension in a predetermined direction of the through hole on the surface of the mask main layer facing the mask substrate is larger than the opening dimension in the predetermined direction of the through hole on the first surface.

37. A method for manufacturing a deposition mask as described in claim 24 or 34, wherein the metal material of the mask main body layer is a magnetic metal material.

38. A method for manufacturing a vapor deposition mask as described in claim 24 or 34, wherein the thickness of the mask intermediate layer is smaller than the thickness of the mask main body layer.

39. A method for manufacturing a vapor deposition mask as described in claim 24 or 34, wherein the substrate opening formation process includes a resist layer formation process for forming a resist layer having a resist opening on the surface of the mask substrate opposite the mask layer, and a substrate etching process for etching the mask substrate through the resist opening to form the substrate opening.

40. A method for manufacturing a vapor deposition mask as described in Claim 39, wherein the mask intermediate layer includes a substrate-side layer containing a material that can ensure adhesion to the mask substrate and is resistant to the etching medium used in the substrate etching process.

41. A method for manufacturing a vapor deposition mask as described in Claim 40, wherein the mask intermediate layer includes a main body side layer facing the mask main body layer and containing a material that can ensure adhesion with the mask main body layer.

42. The method of claim 42, wherein in the mask layer forming step, the mask body layer is formed by plating; 42. The method for manufacturing a deposition mask according to claim 41, wherein the mask intermediate layer includes an intermediate layer located between the substrate side layer and the main body side layer, the intermediate layer including a material capable of protecting the substrate side layer from a plating solution used to form the mask main body layer.

43. A method for manufacturing a vapor deposition mask as described in Claim 40, wherein the substrate side layer is in contact with the mask main body layer and also in contact with the mask substrate.

44. A method for manufacturing a vapor deposition mask as described in claim 24 or 34, wherein in the mask layer formation process, the mask intermediate layer is formed by a sputtering process.

45. A method for manufacturing a vapor deposition mask as described in claim 24 or 34, wherein in the mask layer formation process, the mask intermediate layer is formed by a vapor deposition process.

46. The substrate opening is formed in a rectangular shape in a plan view, The method for manufacturing a deposition mask according to claim 24 or 34, wherein curved portions are provided at four corners of the outline of the substrate opening in a plan view.

47. A method for manufacturing a deposition mask as described in claim 24 or 34, comprising a step of forming a first alignment mark on the surface of the mask substrate opposite the mask layer.

48. The mask substrate has a substrate body that defines the substrate opening, and an inner protrusion that protrudes inward from the substrate body in a plan view, The method for manufacturing a deposition mask according to claim 47 , wherein the first alignment mark is located in the inner protrusion.

49. A method for manufacturing a deposition mask as described in claim 47, comprising a step of forming a second alignment mark at a position closer to the through hole than the first alignment mark.

50. The mask layer has mask bars provided between adjacent groups of the through holes, 50. The method for manufacturing a deposition mask according to claim 49, wherein the second alignment mark is located on the mask rail.

51. The mask bars include a first mask bar and a second mask bar extending in directions perpendicular to each other in a plan view, 51. The method for manufacturing a deposition mask according to claim 50, wherein the second alignment mark is located at an intersection where the first mask bar and the second mask bar intersect.

52. The mask body layer includes two or more body islands; The method for manufacturing a deposition mask according to claim 24 or 34, wherein a groove penetrating the mask body layer is located between two adjacent body islands.

53. The mask layer has a mask insulating layer forming the first surface, 53. The method for manufacturing a deposition mask according to claim 52, wherein the mask insulating layer is located between two adjacent groups of the through holes.

54. A method for manufacturing a deposition mask as described in claim 24 or 34, wherein the mask body layer includes a dummy body island located in a position that does not overlap with the substrate opening in a planar view.

55. A deposition mask preparation process for preparing the deposition mask by the deposition mask manufacturing method according to claim 24 or 34; a bonding step of bonding the first surface of the mask layer of the deposition mask to a deposition substrate; and a vapor deposition step of depositing a vapor deposition material onto the vapor deposition substrate through the through-holes of the vapor deposition mask to form a vapor deposition layer.

56. A deposition mask preparation process for preparing the deposition mask by the deposition mask manufacturing method according to claim 24 or 34; and a frame attaching step of attaching a frame to the mask substrate of the deposition mask.

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