Plasmonic borophene nanoribbon metal-insulator-metal structure for quantum imaging

Abstract

To provide systems and methods for implementing quantum imaging.SOLUTION: A nano-photonic device comprises: a first substrate that is optically transparent and electrically conductive; a second substrate, residing on the first substrate, that is optically transparent and electrically insulative; a first borophene nanoribbon array electrically coupled to a first electrode, both the first electrode and the first borophene nanoribbon array residing on the second substrate; a third substrate, residing in the second substrate, that is optically transparent and electrically insulative; and a second borophene nanoribbon array electrically coupled to a second electrode, both the second electrode and the second borophene nanoribbon array residing on the third substrate.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The subject matter described herein generally relates to optical switches for quantum imaging and, more specifically, to plasmonic-controlled transparency enabled by a metal-insulator-metal structure including borophene nanoribbons.

Background Art

[0002] Examining a dense layer of nitrogen-vacancy (NV) centers near the surface of a diamond with a wide-field optical microscope to create spatially resolved maps of local quantities such as magnetic fields, electric fields, and lattice strains, and potentially useful information about a nearby sample or device can be provided. Spatial mapping of these stray fields can be achieved by a fixed dense layer of NV centers imaged by a camera.

Summary of the Invention

[0003] In one embodiment, a nanofabricated device is disclosed. The nanofabricated device includes: a first substrate that is optically transparent and conductive; a second substrate that is optically transparent and electrically insulating and present on the first substrate; a first borophene nanoribbon array electrically coupled to a first electrode, where both the first electrode and the first borophene nanoribbon array are present on the second substrate; a third substrate that is optically transparent and electrically insulating and present in the second substrate; and a second borophene nanoribbon array electrically coupled to a second electrode, where both the second electrode and the second borophene nanoribbon array are present on the third substrate.

[0004] In one embodiment, a method for implementing a nanofabricated device is disclosed. In one embodiment, the method includes: Forming a first substrate that is optically transparent and conductive; Forming a second substrate that is optically transparent and electrically insulating and that is present on the first substrate; Forming a first borophene nanoribbon array electrically coupled to the first electrode and positioning both the first electrode and the first borophene nanoribbon array on the second substrate; Forming a third substrate that is optically transparent and electrically insulating and that is present in the second substrate; and Forming a second borophene nanoribbon array electrically coupled to the second electrode and positioning both the second electrode and the second borophene nanoribbon array on the third substrate.

[0005] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate various systems, methods, and other embodiments of the disclosure. It will be understood that the boundary lines of the illustrated elements in the figures (e.g., boxes, groups of boxes, or other shapes) represent one embodiment of the boundary lines. In some embodiments, one element may be designed as multiple elements, or multiple elements may be designed as one element. In some embodiments, one element shown as an internal component of another element may be implemented as an external component, and vice versa. Further, the elements may not be drawn to exact scale. BRIEF DESCRIPTION OF THE DRAWINGS

[0006]

Figure 1A

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Figure 1B

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Figure 2

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Figure 3

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Figure 4

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Figure 5

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Figure 6

DETAILED DESCRIPTION OF THE INVENTION

[0013] The present disclosure describes systems, methods, and other embodiments related to quantum imaging, such as wide-field imaging of photoluminescence by NV centers in a diamond substrate.

[0014] In particular, an optical switch structure is provided that can be present on a diamond substrate and uses a borophene nanoribbon array in a metal-insulator-metal (MIM) to achieve plasmonically-induced transparency. Based on such an optical switch structure, the reconstruction of an image captured in a diamond substrate can then be performed by further use of a single-pixel photodetector and an image reconstruction module as described in the present disclosure.

[0015] Regarding FIG. 1A, an example of a system for wide-field imaging of photoluminescence is shown. A light source 110 (e.g., "green" light at 546 nm) can be used to excite the NV centers 120 in the NV center material 130. The presence of an electric or magnetic field (not shown) can cause the NV centers 120 to produce photoluminescence (e.g., "red" light at 670 nm), and this photoluminescence can be processed by an optical modulator 140 (e.g., a spatial light modulator). Next, the output of the optical modulator can be captured by a single-pixel photodetector 150. The data obtained from the single-pixel photodetector can then be processed by an image reconstruction module 160 using L1 optimization to form an image.

[0016] For example, as shown in FIG. 1B, the imaging system of FIG. 1A can be composed of a number of "small" nodes each having a pattern-randomized filter (implemented by the optical modulator), a single-pixel camera, and a transceiver, where the nodes are indexed as JPEG2025098952000002.jpg8170.

Number

[0017]

Number

[0018] With respect to FIG. 2, an array of optical switch structures 220 that can be present on the surface of the diamond substrate 210 (or optically coupled in another way) is shown. An example of an optical switch structure is shown in FIG. 3. As shown, the optical switch structure 300 can be composed of a first substrate 320 that is conductive and transparent, such as an indium tin oxide layer. In some embodiments, the first substrate 320 can be formed on a diamond substrate 310 (not shown), such as on the diamond substrate 210. An insulating and transparent second substrate 330, such as a silicon dioxide (SiO2) layer, can be formed on the first substrate 320. Next, a first electrode 340 and a first array of borophene nanoribbons 350 can be formed on the second substrate 330. Next, an insulating (e.g., dielectric constant 300) and transparent third substrate 360, such as a strontium titanate (SrTiO3) layer, can be formed on the second substrate 330. Next, a second electrode 370 and a second array of borophene nanoribbons 380 can be formed on the third substrate 360.

[0019] FIG. 4 shows an example of a nanoribbon array structure / parameter 400, which may be used with the optical switch structure 300. Regarding the first array of borophene nanoribbons 410, each element of the array (e.g., 410a - n) can have a width w. Further, each element of the first array of borophene nanoribbons 410 can be spaced apart from each other by a distance p x The second array of borophene nanoribbons 420 may be similarly configured if each element (e.g., 420a - n) has a width w and each element is spaced apart from any neighboring element by a distance p x The first array of borophene nanoribbons 410 and the second array of borophene nanoribbons 410 may also be spaced apart by a distance t.

[0020] In each array of borophene nanoribbons, to obtain a desired carrier density n s the array parameter p xBy selecting the application of w, t, and bias voltages V1 and V2, plasmonically-induced transparency (PIT) can be achieved in the optical switch structure 330. PIT is a nanophotonic phenomenon involving the interaction between electromagnetic waves and plasmon resonances in a plurality of metallic nanostructures. In PIT, transparency occurs due to the interaction between bright plasmon modes and dark plasmon modes in a plurality of metallic nanostructures. The bright plasmon is a resonant plasmon mode that can absorb and scatter light, while the dark mode is a non-radiative mode that does not easily couple with light. When these two modes couple, they can produce a spectral window where light absorption is significantly reduced or becomes transparent at a specific wavelength.

[0021] For example, to implement PIT by the optical switch structure 300, p x can be set to 60 nm, w can be set to 8 nm, and t can be set to 10 nm. Based on such array parameters, in the first filtering state, the desired carrier density n0 for both the first borophene nanoribbon array 410 and the second borophene nanoribbon array 420 is 8×10 19 m -2 (e.g., intrinsic property), and as a result, the bias voltages V1 and V2 can be selected such that Δn s = 0 between the first and second borophene nanoribbon arrays 410 and 420 (e.g., V1 = 0V, V2 = 0V). Similarly, for the second filtering state, the desired carrier density n1 of the first borophene nanoribbon array 410 can be set to 6×10 19 m -2 by the bias voltage V1 (e.g., V1 = -13.5V), while the desired carrier density n2 of the second borophene nanoribbon array 420 can be set to 10×10 19 m -2can be set, and as a result, Δn between the first and second borophene nanoribbon arrays 410 and 420 s = 4×10 19 m -2 is obtained.

[0022] The required bias voltage can be estimated by the formula:

Equation

[0023] By adjusting the bias voltages V1 and V2 to switch between the first filtering state and the second filtering state, the optical switch structure 300 can optically filter signals as shown in FIG. 5. For example, when the optical switch structure 300 is in the first filtering state where Δn s = 0, an optical signal at 670 nm can pass through the optical switch structure 300 (e.g., as shown with a high transmittance in FIG. 5). If the optical switch structure 300 is in the second filtering state where Δn s = 4×10 19 m -2 is, an optical signal at 670 nm cannot pass through the optical switch structure 300 (e.g., as shown by a transmittance close to zero in FIG. 5).

[0024] FIG. 6 shows a flowchart of a method 600 for manufacturing an optical switch structure. With reference to the nanoribbon array structure / parameters 400 of FIG. 4, method 600 will be described in the context of the overall view of the optical switch structure 300 of FIG. 3. With reference to the nanoribbon array structure / parameters 400, method 600 will be described in combination with the optical switch structure 300. However, it should be understood that method 600 is not limited to being implemented with the optical switch structure 300 and the nanoribbon array structure / parameters 400, and that method 600 is an example of an optical switch structure in which method 600 can be implemented. For example, other nanoribbon array structures / parameters that enable PIT by the optical switch structure 300 can also be implemented by method 600.

[0025] In step 610, electron beam evaporation (e-beam evaporation) can be used to deposit a first substrate that is optically transparent and conductive, such as an indium tin oxide (ITO) layer. In some embodiments, the first substrate can be deposited on a diamond substrate, such as one that includes an NV center.

[0026] In step 620, e-beam evaporation can be used to deposit a second substrate that is optically transparent and electrically insulating, such as a silicon dioxide (SiO2) layer, on the first substrate.

[0027] In step 630, e-beam lithography can be used to define a nanoribbon array pattern on the second substrate. Further, photolithography (e.g., by using a photomask) can be used to define a metal electrode pattern on the second substrate.

[0028] In step 640, e-beam evaporation can be used to deposit a metal for the electrodes (e.g., gold, copper, silver, platinum, nickel), and then a wet lift-off solution (e.g., acetone) is applied to expose the electrodes.

[0029] In step 650, chemical vapor deposition can be used to deposit borophene on the second substrate. In some embodiments, graphene may be used instead of borophene.

[0030] In step 660, the application of a wet lift-off solution (e.g., acetone) can be used to expose the borophene nanoribbon array.

[0031] In step 670, sputtering can be used to deposit a third substrate that is optically transparent and electrically insulating on the second substrate, for example, a strontium titanate (SrTiO3) layer.

[0032] In step 680, steps 530 - 560 may be repeated with respect to the third substrate instead of the second substrate.

[0033] In step 690, any necessary cleaning process may be applied.

[0034] Thus, using method 600, an optical switch structure having a nanoribbon array structure / parameters (e.g., an optical switch structure 300 having a nanoribbon array structure / parameters 400) can be manufactured. Furthermore, such an optical switch structure can be used as an optical modulator. For example, the optical switch structure 300 having a nanoribbon array structure / parameters 400 can be used as an optical modulator for the imaging system described in FIGS. 1A - 1B. In such an embodiment, the image to be reconstructed can be generated by the photoluminescence of the NV centers 120 in the NV center material 130. Further, the NV center material 130 can be coupled to a number of "small" nodes each comprising a pattern-randomized filter (e.g., implemented by an optical switch structure 300 having a nanoribbon array structure / parameters 400), a single-pixel camera, and a transceiver, and then image reconstruction is possible according to equation (1).

[0035] As another example, while the above-described system and method have been described with respect to the use of a plurality of borophene ribbon arrays (e.g., when optical transparency less than 1500 nm is desired), the optical switch structure can equally be implemented by a graphene ribbon array (e.g., when optical transparency greater than or equal to 1500 nm is desired).

[0036] The above examples have been presented with NV center materials using diamond, however, it should be noted that other wide-gap materials containing defects, such as silicon carbide (SiC), gallium nitride (GaN), and hexagonal boron nitride (hBN), can also be used as the center materials with respect to the systems and methods disclosed herein.

[0037] Detailed embodiments are disclosed herein. However, it should be understood that the disclosed embodiments are intended as merely examples. Accordingly, the specific structural and functional details disclosed herein should not be construed as limiting, but rather as a basis for the claims and as a representative basis teaching one of ordinary skill in the art to employ the aspects herein with substantially any suitable detailed structure. Further, the terms and expressions used in this disclosure are not intended to be limiting, but rather are intended to provide an understandable description of possible implementations. Although various embodiments are shown in FIGS. 1 - 6, these embodiments are not limited to the structures or uses shown.

[0038] The flowcharts and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments. In this regard, each block in the flowchart or block diagram may represent a module, segment, or portion of code that comprises one or more executable instructions for performing the specified logical function. It should also be noted that in some alternative implementations, the functions described in the blocks may occur without regard to the order and relationship described in the figures. For example, two blocks shown in succession may actually be executed substantially simultaneously, or the blocks may sometimes be executed in the reverse order depending on the related functions.

[0039] The above system, component, or process can be implemented in hardware, or in a combination of hardware and software, and can be implemented in a centralized manner in one processing system, or in a distributed manner where various elements are spread across several interconnected processing systems. Any kind of processing system or other device configured to execute the methods described in this disclosure is suitable. A typical combination of hardware and software can be a processing system having computer-usable program code that controls the processing system to execute the methods described in this disclosure when loaded and executed. The system, component, or process may be incorporated into a machine-readable computer storage, such as a computer program product or other data program storage device, that tangibly embodies a program of machine-executable instructions for implementing the methods and processes described in this disclosure. These elements may be incorporated into an application product that has all the functions enabling the implementation of the methods described in this disclosure and can execute the methods when loaded into the processing system.

[0040] Furthermore, the arrangements described in this disclosure can take the form of a computer program product embodied in one or more computer-readable media, for example, stored computer-readable media, in which computer-readable program code is embodied. Any combination of one or more computer-readable media may be used. The computer-readable media can be a computer-readable signal medium or a computer-readable storage medium. The phrase "computer-readable storage medium" means a non-transitory storage medium. The computer-readable storage medium can be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any suitable combination of the foregoing. More specific examples (a non-exhaustive list) of the computer-readable storage medium include the following: portable computer diskettes, hard disk drives (HDDs), solid state drives (SSDs), read-only memories (ROMs), erasable programmable read-only memories (EPROMs or flash memories), portable compact disk read-only memories (CD-ROMs), digital versatile disks (DVDs), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing. In the context of this specification, the computer-readable storage medium can be any tangible medium that can contain or store a program for use by or in connection with an instruction execution system, apparatus, or device.

[0041] Generally, the modules used in this disclosure include routines, programs, objects, components, data structures, etc. that perform a particular task or implement a particular data type. In a further aspect, memory generally stores the above modules. The memory associated with a module can be a buffer or cache incorporated within the processor, RAM, ROM, flash memory, or another suitable electronic storage medium. In a further aspect, the modules contemplated by this disclosure are implemented as application specific integrated circuits (ASICs), as hardware components of a system-on-chip (SoC), as programmable logic arrays (PLAs), or as another suitable hardware component incorporating a defined set of configurations (e.g., instructions) to perform the disclosed functions.

[0042] Program code embodied on a computer-readable medium can be transmitted using any suitable medium, including but not limited to wireless, wired, fiber optic, cable, RF, etc., or any suitable combination of the foregoing. The computer program code for performing the operations of the aspects of this configuration may be written in any combination of one or more programming languages, including object-oriented programming languages such as Java (trademark), Smalltalk, C++, and conventional procedural programming languages such as the "C" programming language or similar programming languages. The program code may execute entirely on the user's computer, partially on the user's computer, as a stand-alone software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the latter scenario, the remote computer may be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (e.g., through the Internet using an Internet service provider).

[0043] As used in this disclosure, the terms "a" and "an" are defined as one or more. As used in this disclosure, the term "plurality" is defined as two or more. As used in this disclosure, the term "another" is defined as at least a second or more. As used in this disclosure, the terms "including" and / or "having" are defined as comprising (i.e., an open phrase). The phrase "at least one of... and..." as used in this disclosure refers to any and all possible combinations of one or more of the associated listed items, including those combinations. By way of example, the phrase "at least one of A, B, and C" includes only A, only B, only C, or any combination thereof (e.g., AB, AC, BC, or ABC).

[0044] Aspects of the present disclosure may be embodied in other forms without departing from its spirit or essential attributes. Accordingly, reference should be made to the following claims, rather than the foregoing specification, as indicating the scope of the present disclosure.

[0045] The present invention also includes the following embodiments. [Embodiment 1] A nanophotonic device comprising the following: A first substrate that is optically transparent and conductive; A second substrate that is optically transparent and electrically insulating and is present on the first substrate; A first borophene nanoribbon array electrically coupled to a first electrode, where both the first electrode and the first borophene nanoribbon array are present on the second substrate; A third substrate that is optically transparent and electrically insulating and is present in the second substrate; and A second borophene nanoribbon array electrically coupled to a second electrode, where both the second electrode and the second borophene nanoribbon array are present on the third substrate. [Embodiment 2] The nanophotonic device according to Embodiment 1, wherein the first borophene nanoribbon array and the second borophene nanoribbon array are structured to cause plasmon-induced transparency when a first bias voltage is applied to the first electrode and a second bias voltage is applied to the second electrode. [Embodiment 3] The nanophotonic device according to Embodiment 2, wherein the plasmon-induced transparency occurs at 670 nm. [Embodiment 4] The nanophotonic device according to Embodiment 2, wherein the plasmon-induced transparency occurs at less than 1500 nm. [Embodiment 5] The nanophotonic device according to any one of Embodiments 1 to 4, wherein the first substrate is composed of an indium tin oxide layer. [Embodiment 6] The nanophotonic device according to any one of Embodiments 1 to 5, wherein the second substrate is composed of a silicon dioxide layer. [Embodiment 7] The nanophotonic device according to any one of Embodiments 1 to 6, wherein the third substrate is composed of a calcium fluoride layer. [Embodiment 8] The nanophotonic device according to any one of Embodiments 1 to 7, wherein the first substrate is deposited on a diamond substrate. [Embodiment 9] The nanophotonic device according to Embodiment 8, wherein the first substrate is optically coupled to the diamond substrate. [Embodiment 10] The nanophotonic device according to any one of Embodiments 1 to 9, further comprising a single-pixel detector optically coupled to the third substrate. [Embodiment 11] A method for constructing a nanophotonic device including the following: Forming a first substrate that is optically transparent and conductive; Forming a second substrate that is optically transparent and electrically insulating and exists on the first substrate; Forming a first borophene nanoribbon array electrically coupled to the first electrode and disposing both the first electrode and the first borophene nanoribbon array on the second substrate; Forming a third substrate that is optically transparent and electrically insulating and is present in the second substrate; and Forming a second borophene nanoribbon array electrically coupled to the second electrode and disposing both the second electrode and the second borophene nanoribbon array on the third substrate. [Embodiment 12] The method according to embodiment 11, further comprising structuring the first borophene nanoribbon array and the second borophene nanoribbon array such that plasmon-induced transparency occurs when a first bias voltage is applied to the first electrode and a second bias voltage is applied to the second electrode. [Embodiment 13] The method according to embodiment 12, wherein the plasmon-induced transparency occurs at 670 nm. [Embodiment 14] The method according to embodiment 12, wherein the plasmon-induced transparency occurs at less than 1500 nm. [Embodiment 15] The method according to any one of embodiments 11 to 14, wherein the first substrate is composed of an indium tin oxide layer. [Embodiment 16] The method according to any one of embodiments 11 to 15, wherein the second substrate is composed of a silicon dioxide layer. [Embodiment 17] The method according to any one of embodiments 11 to 16, wherein the third substrate is composed of a calcium fluoride layer. [Embodiment 18] The method according to any one of embodiments 11 to 17, wherein the first substrate is deposited on a diamond substrate. [Embodiment 19] The method according to embodiment 18, further comprising forming an optical coupling between the first substrate and the diamond substrate. [Embodiment 20] The method according to any one of embodiments 11 to 19, further comprising forming an optical coupling between the third substrate and the single pixel detector.

Claims

1. Nanophotonic devices, including: an optically transparent and electrically conductive first substrate; an optically transparent and electrically insulating second substrate overlying the first substrate; a first borophene nanoribbon array electrically coupled to a first electrode, wherein the first electrode and the first borophene nanoribbon array are both on the second substrate; an optically transparent and electrically insulating third substrate overlying the second substrate; and a second borophene nanoribbon array electrically coupled to a second electrode, wherein the second electrode and the second borophene nanoribbon array are both on the third substrate.

2. 10. The nanophotonic device of claim 1, wherein the first borophene nanoribbon array and the second borophene nanoribbon array are structured to undergo plasmon-induced transparency when a first bias voltage is applied to the first electrode and a second bias voltage is applied to the second electrode.

3. The nanophotonic device of claim 2 , wherein the plasmon-induced transparency occurs at 670 nm.

4. 3. The nanophotonic device of claim 2, wherein the plasmon-induced transparency occurs below 1500 nm.

5. The nanophotonic device of claim 1 , wherein the first substrate is comprised of an indium tin oxide layer.

6. The nanophotonic device of claim 5 , wherein the second substrate is comprised of a silicon dioxide layer.

7. The nanophotonic device of claim 6 , wherein the third substrate is comprised of a calcium fluoride layer.

8. The nanophotonic device of claim 1 , wherein the first substrate is deposited on a diamond substrate.

9. The nanophotonic device of claim 1 , wherein the first substrate is optically coupled to a diamond substrate.

10. The nanophotonic device of claim 1 , further comprising a single pixel detector optically coupled to the third substrate.

11. A method for constructing a nanophotonic device comprising: forming a first substrate that is optically transparent and electrically conductive; forming an optically transparent and electrically insulating second substrate overlying said first substrate; forming a first borophene nanoribbon array electrically coupled to a first electrode, the first electrode and the first borophene nanoribbon array both being on the second substrate; forming an optically transparent and electrically insulating third substrate overlying the second substrate; and forming a second borophene nanoribbon array electrically coupled to a second electrode, the second electrode and the second borophene nanoribbon array both being on the third substrate;

12. 12. The method of claim 11 , wherein forming the first borophene nanoribbon array and forming the second borophene nanoribbon array further comprises structuring the first borophene nanoribbon array and the second borophene nanoribbon array to undergo plasmon-induced transparency when a first bias voltage is applied to the first electrode and a second bias voltage is applied to the second electrode.

13. 13. The method of claim 12, wherein the plasmon-induced transparency occurs at 670 nm.

14. 13. The method of claim 12, wherein the plasmon-induced transparency occurs below 1500 nm.

15. The method of claim 11 , wherein the first substrate is comprised of an indium tin oxide layer.

16. The method of claim 15 , wherein the second substrate is comprised of a silicon dioxide layer.

17. The method of claim 16 , wherein the third substrate is comprised of a calcium fluoride layer.

18. The method of claim 11 , wherein the first substrate is deposited on a diamond substrate.

19. The method of claim 11 , further comprising forming an optical coupling between the first substrate and a diamond substrate.

20. The method of claim 11 , further comprising forming an optical coupling between the third substrate and a single pixel detector.

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