Display device

Abstract

To provide a display device having a light detecting function, and a display device with high convenience.SOLUTION: A display device includes a light-receiving element, a first light-emitting element, and a second light-emitting element in a display part. The light-receiving element includes a first pixel electrode, an active layer, and a common electrode. The first light-emitting element includes a second pixel electrode, a first light-emitting layer, and the common electrode. The second light-emitting element includes a third pixel electrode, a second light-emitting layer, and the common electrode. The active layer contains an organic compound. The active layer exists between the first pixel electrode and the common electrode. The first light-emitting layer exists between the second pixel electrode and the common electrode. The second light-emitting layer exists between the third pixel electrode and the common electrode. The first light-emitting layer further exists between the first pixel electrode and the common electrode and / or between the third pixel electrode and the common electrode.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to a display device, a display module, and an electronic device. One aspect of the present invention relates to a display device having a light-receiving element and a light-emitting element.

[0002] Note that one aspect of the present invention is not limited to the above technical field. Examples of the technical field of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (for example, touch sensors, etc.), input / output devices (for example, touch panels, etc.), driving methods thereof, or manufacturing methods thereof.

Background Art

[0003] In recent years, display devices are expected to be applied to various uses. For example, as uses of large display devices, there are home television sets (also referred to as TVs or television receivers), digital signage, public information displays (PIDs), and the like. In addition, as portable information terminals, the development of smartphones and tablet terminals equipped with touch panels has been underway.

[0004] As display devices, for example, light-emitting devices having light-emitting elements have been developed. A light-emitting element (also referred to as an EL element) using an electroluminescence (hereinafter abbreviated as EL) phenomenon has characteristics such as being easily thinned and lightened, being able to respond quickly to an input signal, and being drivable using a DC low-voltage power supply, and is applied to display devices. For example, Patent Document 1 discloses a flexible light-emitting device to which an organic EL element is applied.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] One aspect of the present invention is to provide a display device having a light detection function as one of the problems. One aspect of the present invention is to provide a highly convenient display device as one of the problems. One aspect of the present invention is to provide a multifunctional display device as one of the problems. One aspect of the present invention is to provide a display device with a high aperture ratio as one of the problems. One aspect of the present invention is to provide a display device with high definition as one of the problems. One aspect of the present invention is to provide a novel display device as one of the problems.

[0007] One aspect of the present invention is to improve the production yield of a display device having a light detection function as one of the problems. One aspect of the present invention is to reduce the number of steps of a display device having a light detection function as one of the problems. One aspect of the present invention is to reduce the production cost of a display device having a light detection function as one of the problems.

[0008] Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention does not necessarily need to solve all of these problems. It is possible to extract other problems from the description of the specification, drawings, and claims.

Means for Solving the Problems

[0009] A display device according to one aspect of the present invention includes a light receiving element, a first light emitting element, and a second light emitting element in a display unit. The light receiving element includes a first pixel electrode, an active layer, and a common electrode. The first light emitting element includes a second pixel electrode, a first light emitting layer, and a common electrode. The second light emitting element includes a third pixel electrode, a second light emitting layer, and a common electrode. The active layer includes an organic compound. The active layer is located between the first pixel electrode and the common electrode. The first light emitting layer is located between the second pixel electrode and the common electrode. The second light emitting layer is located between the third pixel electrode and the common electrode. The first light emitting layer is further located in one or both of the space between the first pixel electrode and the common electrode and the space between the third pixel electrode and the common electrode.

[0010] A display device according to one aspect of the present invention includes a light receiving element and a first light emitting element in a display unit. The light receiving element includes a first pixel electrode, an active layer, a first light emitting layer, and a common electrode. The first light emitting element includes a second pixel electrode, a first light emitting layer, and a common electrode. The active layer includes an organic compound. The active layer is located between the first pixel electrode and the common electrode. The first light emitting layer is located between the first pixel electrode and the common electrode and between the second pixel electrode and the common electrode.

[0011] In the display device having the above configuration, it is preferable that the display unit further includes a second light emitting element. The second light emitting element preferably includes a third pixel electrode, a first light emitting layer, a second light emitting layer, and a common electrode. The first light emitting layer and the second light emitting layer are each preferably located between the third pixel electrode and the common electrode. The first light emitting element preferably emits light emitted by the first light emitting layer. The second light emitting element preferably emits light emitted by the second light emitting layer.

[0012] Alternatively, in the display device having the above configuration, it is preferable that the first light emitting element further includes an active layer. The active layer is preferably located between the second pixel electrode and the common electrode.

[0013] A display device according to one aspect of the present invention includes a light receiving element, a first light emitting element, a second light emitting element, a first colored layer, and a second colored layer in a display unit. The light receiving element includes a first pixel electrode, an active layer, and a common electrode. The first light emitting element includes a second pixel electrode, a first light emitting layer, and a common electrode. The second light emitting element includes a third pixel electrode, a first light emitting layer, and a common electrode. The active layer includes an organic compound. The active layer is located between the first pixel electrode and the common electrode. The first light emitting layer is located between the second pixel electrode and the common electrode, and between the third pixel electrode and the common electrode. Light emitted from the first light emitting element is taken out from the display unit as light of a first color through the first colored layer. Light emitted from the second light emitting element is taken out from the display unit as light of a second color through the second colored layer.

[0014] In the display device having the above configuration, it is preferable that the first light emitting element and the second light emitting element further include a second light emitting layer. The second light emitting layer is preferably located between the second pixel electrode and the common electrode, and between the third pixel electrode and the common electrode. The first light emitting layer and the second light emitting layer preferably emit light having different wavelengths from each other.

[0015] In the display device having the above configuration, it is preferable that the display unit further includes a third light emitting element and a third colored layer. The third light emitting element preferably includes a fourth pixel electrode, a third light emitting layer, and a common electrode. The third light emitting layer is preferably located between the second pixel electrode and the common electrode, between the third pixel electrode and the common electrode, and between the fourth pixel electrode and the common electrode. Light emitted from the third light emitting element is preferably taken out from the display unit as light of a third color through the third colored layer.

[0016] In the display device having each of the above configurations, it is preferable that the light receiving element and the first light emitting element further include a common layer. The common layer is preferably located between the first pixel electrode and the common electrode, and between the second pixel electrode and the common electrode.

[0017] In the display device having each of the above configurations, it is preferable that the display unit further has a partition wall. The partition wall preferably covers the end portions of the first pixel electrode and the second pixel electrode. The partition wall preferably has a function of electrically insulating the first pixel electrode and the second pixel electrode. The partition wall preferably has a function of absorbing at least a part of the light emitted by the first light-emitting element.

[0018] In the display device having each of the above configurations, it is preferable that the display unit further has a colored layer. The colored layer preferably has a portion that contacts one or both of the upper surface and the side surface of the partition wall. The colored layer preferably has a color filter or a black matrix.

[0019] In the display device having each of the above configurations, it is preferable that the display unit further has a lens. The lens preferably has a portion that overlaps with the light-receiving element. It is preferable that the light transmitted through the lens is incident on the light-receiving element. It is preferable that the display unit further has a light-shielding layer. The end portion of the light-shielding layer preferably overlaps with the end portion of the lens. The light-shielding layer preferably overlaps with the partition wall.

[0020] In the display device having each of the above configurations, it is preferable that the display unit has flexibility.

[0021] One aspect of the present invention is a module having a display device having any of the above configurations, to which a connector such as a flexible printed circuit board (Flexible Printed Circuit, hereinafter referred to as FPC) or a TCP (Tape Carrier Package) is attached, or a module in which an integrated circuit (IC) is mounted by a COG (Chip On Glass) method or a COF (Chip On Film) method, etc.

[0022] One aspect of the present invention is an electronic device having the above module and at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button.

Advantages of the Invention

[0023] According to one aspect of the present invention, a display device having a light detection function can be provided. According to one aspect of the present invention, a highly convenient display device can be provided. According to one aspect of the present invention, a multifunctional display device can be provided. According to one aspect of the present invention, a display device with a high aperture ratio can be provided. According to one aspect of the present invention, a display device with high definition can be provided. According to one aspect of the present invention, a novel display device can be provided.

[0024] According to one aspect of the present invention, the production yield of a display device having a light detection function can be improved. According to one aspect of the present invention, the number of processes of a display device having a light detection function can be reduced. According to one aspect of the present invention, the production cost of a display device having a light detection function can be reduced.

[0025] Note that the description of these effects does not preclude the existence of other effects. One aspect of the present invention does not necessarily have to have all of these effects. It is possible to extract other effects from the description of the specification, drawings, and claims.

Brief Description of the Drawings

[0026]

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Embodiments for Carrying Out the Invention

[0027] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that the form and details thereof can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments shown below.

[0028] In the configuration of the invention described below, the same reference numerals are commonly used among different drawings for the same part or parts having the same or similar functions, and the repeated description thereof will be omitted. Also, when referring to similar functions, the hatching patterns may be the same, and there may be cases where no reference numerals are particularly assigned.

[0029] In addition, the positions, sizes, ranges, etc. of the respective configurations shown in the drawings may not represent the actual positions, sizes, ranges, etc. for the sake of easy understanding. For this reason, the disclosed invention is not necessarily limited to the positions, sizes, ranges, etc. disclosed in the drawings.

[0030] Note that the term "film" and the term "layer" can be interchanged with each other depending on the case or the situation. For example, it is possible to change the term "conductive layer" to the term "conductive film". Or, for example, it is possible to change the term "insulating film" to the term "insulating layer".

[0031] (Embodiment 1) In this embodiment, a display device according to one aspect of the present invention will be described with reference to FIGS. 1 to 13.

[0032] The display device of the present embodiment has a light receiving element and a light emitting element in the display unit. In the display device of the present embodiment, the light emitting elements are arranged in a matrix in the display unit, and an image can be displayed on the display unit. Further, the light receiving elements are arranged in a matrix in the display unit, and the display unit also has one or both of an imaging function and a sensing function. The display unit can be used for an image sensor or a touch sensor. That is, by detecting light with the display unit, it is possible to capture an image or detect the proximity or contact of an object (such as a finger or a pen). Furthermore, in the display device of the present embodiment, the light emitting element can be used as a light source of the sensor. Therefore, it is not necessary to provide a light receiving unit and a light source separately from the display device, and the number of components of the electronic device can be reduced.

[0033] In the display device of the present embodiment, when the light emitted from the light emitting element of the display unit is reflected by an object, the light receiving element can detect the reflected light. Therefore, imaging and touch (and further proximity) detection are possible even in a dark place.

[0034] The display device of the present embodiment has a function of displaying an image using the light emitting element. That is, the light emitting element functions as a display element.

[0035] As the light emitting element, it is preferable to use an EL element such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode). Examples of the light emitting substance of the EL element include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), an inorganic compound (such as a quantum dot material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) material). Further, an LED such as a micro LED (Light Emitting Diode) can also be used as the light emitting element.

[0036] The display device of the present embodiment has a function of detecting light using the light receiving element.

[0037] When a light-receiving element is used in an image sensor, the display device according to the present embodiment can capture an image using the light-receiving element.

[0038] For example, using an image sensor, data such as fingerprints, palm prints, or irises can be acquired. That is, a biometric authentication sensor can be incorporated into the display device according to the present embodiment. By incorporating the biometric authentication sensor into the display device, the number of components of the electronic device can be reduced compared to the case where a biometric authentication sensor is provided separately from the display device, and the electronic device can be miniaturized and lightened.

[0039] Also, using an image sensor, data such as the user's facial expression, eye movement, or change in pupil diameter can be acquired. By analyzing the data, information about the user's physical and mental state can be obtained. By changing the output content of one or both of the display and sound based on the information, for example, in devices for VR (Virtual Reality), AR (Augmented Reality), or MR (Mixed Reality), it is possible to ensure that the user can use the device safely.

[0040] Also, when the light-receiving element is used as a touch sensor, the display device according to the present embodiment can detect the proximity or contact of an object using the light-receiving element.

[0041] As the light-receiving element, for example, a pn-type or pin-type photodiode can be used. The light-receiving element functions as a photoelectric conversion element that detects the light incident on the light-receiving element and generates charges. The amount of generated charges is determined based on the amount of incident light.

[0042] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving element. The organic photodiode is easy to thin, lighten, and increase in area, and has a high degree of freedom in shape and design, so it can be applied to various display devices.

[0043] In one aspect of the present invention, an organic EL element is used as a light-emitting element, and an organic photodiode is used as a light-receiving element. The organic EL element and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using the organic EL element.

[0044] If all the layers constituting the organic EL element and the organic photodiode are to be made separately, the number of film-forming steps will increase significantly. Since the organic photodiode has many layers that can have the same configuration as the organic EL element, the layers that can have the same configuration can be formed in a batch, thereby suppressing an increase in the film-forming steps. Further, even when the number of film-forming times is the same, by reducing the layers that are formed only on some of the elements, it is possible to reduce the influence of misalignment of the film-forming pattern, reduce the influence of dust (including small foreign matters called particles) adhering to the film-forming mask (such as a metal mask), and the like. As a result, the yield of manufacturing the display device can be increased.

[0045] In the display device according to one aspect of the present invention, the light-emitting layer of the first light-emitting element that emits the first color is provided in common to one or both of the light-receiving element and the second light-emitting element that emits the second color. Thereby, the number of layers to be made separately can be reduced in the light-receiving element, the first light-emitting element, and the second light-emitting element, and the yield of manufacturing the display device can be increased.

[0046] Furthermore, it is preferable that at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer is a common layer for the light receiving element, the first light emitting element, and the second light emitting element. Thereby, the number of film formation times and the number of masks can be reduced, and the manufacturing process and manufacturing cost of the display device can be reduced. Note that the layers commonly possessed by the light receiving element, the first light emitting element, and the second light emitting element may have different functions in the light emitting element and the light receiving element. In this specification, components are named based on their functions in the light emitting element. For example, the hole injection layer functions as a hole injection layer in the light emitting element and functions as a hole transport layer in the light receiving element. Similarly, the electron injection layer functions as an electron injection layer in the light emitting element and functions as an electron transport layer in the light receiving element.

[0047] Figures 1A to 1D show cross-sectional views of a display device according to an aspect of the present invention.

[0048] The display device 50A shown in Figure 1A has a layer 53 having a light receiving element and a layer 57 having a light emitting element between a substrate 51 and a substrate 59.

[0049] The display device 50B shown in Figure 1B has a layer 53 having a light receiving element, a layer 55 having a transistor, and a layer 57 having a light emitting element between a substrate 51 and a substrate 59.

[0050] The display devices 50A and 50B are configured such that light of red (R), green (G), and blue (B) is emitted from the layer 57 having the light emitting element.

[0051] The light receiving element included in the layer 53 having the light receiving element can detect light incident from outside the display device 50A or the display device 50B.

[0052] The display device according to one aspect of the present invention has a plurality of pixels arranged in a matrix. One pixel has one or more sub-pixels. One sub-pixel has one light-emitting element. For example, the pixel may have a configuration having three sub-pixels (such as three colors of R, G, B, or three colors of yellow (Y), cyan (C), and magenta (M)), or a configuration having four sub-pixels (such as four colors of R, G, B, white (W), or four colors of R, G, B, Y). Further, the pixel has a light-receiving element. The light-receiving element may be provided in all pixels or may be provided in some pixels. Also, one pixel may have a plurality of light-receiving elements.

[0053] The layer 55 having the transistor preferably has a first transistor and a second transistor. The first transistor is electrically connected to the light-receiving element. The second transistor is electrically connected to the light-emitting element.

[0054] The display device according to one aspect of the present invention may have a function of detecting an object such as a finger in contact with the display device. For example, as shown in FIG. 1C, the light emitted by the light-emitting element in the layer 57 having the light-emitting element is reflected by the finger 52 in contact with the display device 50B, and the light-receiving element in the layer 53 having the light-receiving element detects the reflected light. Thereby, it can be detected that the finger 52 has contacted the display device 50B.

[0055] The display device according to one aspect of the present invention may have a function of detecting or imaging an object (not in contact) close to the display device 50B as shown in FIG. 1D.

[0056] [Pixel] Examples of pixels are shown in FIGS. 1E to 1H.

[0057] The pixels shown in FIGS. 1E and 1F have three sub-pixels (three light-emitting elements) of R, G, and B and a light-receiving element PD. FIG. 1E is an example in which three sub-pixels and the light-receiving element PD are arranged in a 2×2 matrix, and FIG. 1F is an example in which three sub-pixels and the light-receiving element PD are arranged in a single horizontal row.

[0058] The pixel shown in FIG. 1G has four sub-pixels (four light-emitting elements) of R, G, B, and W, and a light-receiving element PD.

[0059] The pixel shown in FIG. 1H has three sub-pixels of R, G, and B, a light-emitting element IR that emits infrared light, and a light-receiving element PD. At this time, it is preferable that the light-receiving element PD has a function of detecting infrared light. The light-receiving element PD may have a function of detecting both visible light and infrared light. The wavelength of the light detected by the light-receiving element PD can be determined according to the use of the sensor.

[0060] Hereinafter, with reference to FIGS. 2 to 7, the detailed configurations of the light-emitting element and the light-receiving element included in the display device according to one aspect of the present invention will be described.

[0061] The display device according to one aspect of the present invention may be a top emission type that emits light in a direction opposite to the substrate on which the light-emitting element is formed, a bottom emission type that emits light on the substrate side where the light-emitting element is formed, or a dual emission type that emits light on both sides.

[0062] In FIGS. 2 to 7, a top emission type display device will be described as an example.

[0063] In the present specification and the like, unless otherwise specified, even when describing a configuration having a plurality of elements (such as a light-emitting element and a light-emitting layer), when describing matters common to each element, the alphabet may be omitted. For example, when describing matters common to the light-emitting layer 193R and the light-emitting layer 193G, etc., it may be described as the light-emitting layer 193.

[0064] [Configuration Example 1] First, the display device shown in FIGS. 2, 3A, and 3B will be described.

[0065] The display device shown in FIGS. 2, 3A, and 3B has a light-emitting element 47B that emits blue (B) light, a light-emitting element 47G that emits green (G) light, a light-emitting element 47R that emits red (R) light, and a light-receiving element 46 on a substrate 151 via a layer 55 having transistors.

[0066] The light-emitting element 47B, the light-emitting element 47G, and the light-emitting element 47R each have a pixel electrode 191 and a common electrode 115. In the present embodiment, a case where the pixel electrode 191 functions as an anode and the common electrode 115 functions as a cathode will be described as an example.

[0067] The light-receiving element 46 has a pixel electrode 181 and a common electrode 115. In the present embodiment, similar to the light-emitting element, it will be described that the pixel electrode 181 functions as an anode and the common electrode 115 functions as a cathode. That is, the light-receiving element 46 can detect the light incident on the light-receiving element 46, generate charges, and extract them as a current by applying a reverse bias between the pixel electrode 181 and the common electrode 115 and driving.

[0068] The pixel electrode 191 and the pixel electrode 181 can be formed of the same material and in the same process. The pixel electrodes 191 of the respective light-emitting elements are electrically insulated from each other (also referred to as being electrically separated). Also, the pixel electrode 181 of the light-receiving element 46 is electrically insulated from the pixel electrodes 191 of the respective light-emitting elements.

[0069] The common electrode 115 is commonly used for the light-receiving element 46, the light-emitting element 47B, the light-emitting element 47G, and the light-emitting element 47R.

[0070] The materials and film thicknesses of the pair of electrodes of the light-receiving element 46, the light-emitting element 47B, the light-emitting element 47G, and the light-emitting element 47R can be made equal. Thereby, the manufacturing cost of the display device can be reduced and the manufacturing process can be simplified.

[0071] In the display device shown in FIGS. 2, 3A, and 3B, the light-emitting layer 193B is provided not only in the light-emitting element 47B that emits blue light, but also in the light-emitting element 47R that emits red light, the light-emitting element 47G that emits green light, and the light-receiving element 46. In the light-emitting element 47R, the light-emitting element 47G, and the light-receiving element 46, the light-emitting layer 193B functions as a carrier transport layer (in this embodiment, an electron transport layer).

[0072] By reducing the number of layers made separately for each element, the production of the display device can be simplified. When the light-emitting layer 193B is provided not only in the light-emitting element 47B but also in the light-emitting elements that emit other colors and the light-receiving element, the influence of the deviation of the pattern of the light-emitting layer 193B can be reduced, and the yield in the production of the display device can be increased.

[0073] Further, when the light-emitting layer 193B is formed in a film-forming chamber different from the buffer layer 192B and the buffer layer 194B, a mask is separately required for forming the light-emitting layer 193B. In such a case, by adopting a configuration in which the light-emitting layer 193B is commonly used for the light-receiving element 46, the light-emitting element 47B, the light-emitting element 47G, and the light-emitting element 47R, the number of masks required for film formation can be reduced, and the production cost can be reduced.

[0074] In addition, since high accuracy is required for the alignment between the substrate and the mask, it may take time to arrange the mask, or the alignment deviation may affect the display quality of the produced display device. The fewer the number of masks, the more the production time of the display device can be shortened and the yield can be improved, which is preferable.

[0075] The configuration of the display device shown in FIG. 2 will be specifically described.

[0076] The light-emitting element 47B has a buffer layer 192B, a light-emitting layer 193B, and a buffer layer 194B in this order on the pixel electrode 191. The light-emitting layer 193B has a light-emitting material that emits blue light. The light-emitting element 47B has a function of emitting blue light.

[0077] The light-emitting element 47G has, in this order on the pixel electrode 191, a buffer layer 192G, a light-emitting layer 193G, a light-emitting layer 193B, and a buffer layer 194G. The light-emitting layer 193G has a light-emitting material that emits green light. The light-emitting element 47G has a function of emitting green light.

[0078] The light-emitting element 47R has, in this order on the pixel electrode 191, a buffer layer 192R, a light-emitting layer 193R, a light-emitting layer 193B, and a buffer layer 194R. The light-emitting layer 193R has a light-emitting material that emits red light. The light-emitting element 47R has a function of emitting red light.

[0079] The light-receiving element 46 has, in this order on the pixel electrode 181, a buffer layer 182, an active layer 183, a light-emitting layer 193B, and a buffer layer 184. The active layer 183 has an organic compound. The light-receiving element 46 has a function of detecting one or both of visible light and infrared light.

[0080] The pixel electrode 181, the pixel electrode 191, the buffer layer 182, the buffer layer 192R, the buffer layer 192G, the buffer layer 192B, the active layer 183, the light-emitting layer 193R, the light-emitting layer 193G, the light-emitting layer 193B, the buffer layer 184, the buffer layer 194R, the buffer layer 194G, the buffer layer 194B, and the common electrode 115 may each have a single-layer structure or a laminated structure.

[0081] The light-emitting layer 193B is provided in common to the light-emitting element 47B, the light-emitting element 47G, the light-emitting element 47R, and the light-receiving element 46. On the other hand, the light-emitting layer 193G, the light-emitting layer 193R, and the active layer 183 are layers made separately for each element. The light-emitting layer 193G is provided in the light-emitting element 47G, the light-emitting layer 193R is provided in the light-emitting element 47R, and the active layer 183 is provided in the light-receiving element 46.

[0082] The buffer layer 182 can have a hole transport layer. The buffer layers 192B, 192G, and 192R can each have one or both of a hole injection layer and a hole transport layer. The buffer layer 184 can have an electron transport layer. The buffer layers 184, 194B, 194G, and 194R can each have one or both of an electron injection layer and an electron transport layer.

[0083] The hole injection layer is a layer that injects holes from the anode into the light-emitting element and is a layer containing a material with high hole injection properties. As a material with high hole injection properties, an aromatic amine compound or a composite material containing a hole transport material and an acceptor material (electron-accepting material) can be used.

[0084] In a light-emitting element, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In a light-receiving element, the hole transport layer is a layer that transports holes generated based on light incident on the active layer to the anode. The hole transport layer is a layer containing a hole transport material. As the hole transport material, a substance having a hole mobility of 1×10 -6 cm 2 / Vs or more is preferable. In addition, as long as it is a substance with higher hole transportability than electrons, other substances can also be used. As the hole transport material, a hole transport material such as a π-electron excess type heteroaromatic compound (for example, a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton) is preferable.

[0085] In a light-emitting element, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. In a light-receiving element, the electron transport layer is a layer that transports electrons generated based on light incident on the active layer to the cathode. The electron transport layer is a layer containing an electron transport material. As the electron transport material, a substance having an electron mobility of 1×10 -6 cm 2A substance having an electron mobility of / Vs or higher is preferred. In addition, as long as the substance has higher electron transportability than holes, other substances can also be used. As the electron transport material, in addition to metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, etc., oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other highly electron-transporting materials including nitrogen-containing heteroaromatic compounds such as π-electron-deficient heteroaromatic compounds can be used.

[0086] The electron injection layer is a layer that injects electrons from the cathode into the light-emitting element and is a layer containing a material with high electron injection properties. As the material with high electron injection properties, an alkali metal, an alkaline earth metal, or a compound thereof can be used. As the material with high electron injection properties, a composite material containing an electron transport material and a donor material (electron-donating material) can also be used.

[0087] It is preferable that a microcavity structure is applied to the light-emitting element included in the display device of the present embodiment. Therefore, one of the pair of electrodes included in the light-emitting element preferably has an electrode (semi-transmissive / semi-reflective electrode) having transmissivity and reflectivity with respect to visible light, and the other preferably has an electrode (reflective electrode) having reflectivity with respect to visible light. By having a microcavity structure in the light-emitting element, the light emitted from the light-emitting layer can be resonated between both electrodes, and the light emitted from the light-emitting element can be enhanced.

[0088] Note that the semi-transmissive / semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode having transmissivity for visible light (also referred to as a transparent electrode). In this specification and the like, the reflective electrode that functions as a part of the semi-transmissive / semi-reflective electrode may be described as a pixel electrode or a common electrode, and the transparent electrode may be described as an optical adjustment layer. However, it can sometimes be said that the transparent electrode (optical adjustment layer) also has a function as a pixel electrode or a common electrode.

[0089] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use an electrode with a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more for the light-emitting element. Also, the visible light reflectance of the semi-transmissive / semi-reflective electrode shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode shall be 40% or more and 100% or less, preferably 70% or more and 100% or less. Also, the resistivity of these electrodes is preferably 1×10 -2 Ω·cm or less. Note that when a light-emitting element that emits near-infrared light is used for the display device, it is preferable that the transmittance and reflectance of near-infrared light (light with a wavelength of 750 nm or more and 1300 nm or less) of these electrodes are also within the above numerical ranges.

[0090] The buffer layers 182, 192B, 192G, and 192R may each have a function as an optical adjustment layer. Specifically, for the light-emitting element 47B, it is preferable to adjust the film thickness of the buffer layer 192B so that the optical distance between a pair of electrodes becomes an optical distance that enhances blue light. Similarly, for the light-emitting element 47G, it is preferable to adjust the film thickness of the buffer layer 192G so that the optical distance between a pair of electrodes becomes an optical distance that enhances green light. And for the light-emitting element 47R, it is preferable to adjust the film thickness of the buffer layer 192R so that the optical distance between a pair of electrodes becomes an optical distance that enhances red light. By making the film thicknesses of the buffer layer 192 or the buffer layer 194 different, in each light-emitting element, light of a specific color can be enhanced and extracted. Note that when the semi-transmissive / semi-reflective electrode has a laminated structure of a reflective electrode and a transparent electrode, the optical distance between a pair of electrodes indicates the optical distance between a pair of reflective electrodes.

[0091] Specifically, the configuration of the display device shown in FIG. 3A will be described.

[0092] In addition to the configuration of the display device shown in FIG. 2, the display device shown in FIG. 3A has a common layer 112 and a common layer 114.

[0093] By making at least a part of the layers constituting the light-emitting element and the light-receiving element have a common configuration, the manufacturing process of the display device can be reduced, which is preferable.

[0094] Specifically, the light-emitting element 47B shown in FIG. 3A has a common layer 112 between the pixel electrode 191 and the buffer layer 192B, and a common layer 114 between the buffer layer 194B and the common electrode 115. Similarly, the light-emitting element 47G shown in FIG. 3A has a common layer 112 between the pixel electrode 191 and the buffer layer 192G, and a common layer 114 between the buffer layer 194G and the common electrode 115. And the light-emitting element 47R shown in FIG. 3A has a common layer 112 between the pixel electrode 191 and the buffer layer 192R, and a common layer 114 between the buffer layer 194R and the common electrode 115. Also, the light-receiving element 46 shown in FIG. 3A has a common layer 112 between the pixel electrode 181 and the buffer layer 182, and a common layer 114 between the buffer layer 184 and the common electrode 115.

[0095] The common layer 112 and the common layer 114 may each have a single-layer structure or a laminated structure.

[0096] The common layer 112 can have, for example, one or both of a hole injection layer and a hole transport layer. The common layer 114 can have, for example, one or both of an electron injection layer and an electron transport layer. The functions of the common layer 112 and the common layer 114 may be different in the light-emitting element and the light-receiving element. For example, when the common layer 112 has a hole injection layer, the hole injection layer functions as a hole injection layer in the light-emitting element and as a hole transport layer in the light-receiving element. Similarly, when the common layer 114 has an electron injection layer, the electron injection layer functions as an electron injection layer in the light-emitting element and as an electron transport layer in the light-receiving element.

[0097] As an example of the display device shown in FIG. 3A, a configuration may be mentioned in which the common layer 112 has a hole injection layer, the buffer layers 182, 192B, 192G, 192R each have a hole transport layer, the buffer layers 184, 194B, 194G, 194R each have an electron transport layer, and the common layer 114 has an electron injection layer.

[0098] The common layer 112 and the common layer 114 are respectively located on the pixel electrode 181 and on the pixel electrode 191. The common layer 112 and the common layer 114 are layers that are commonly used for the light receiving element 46 and the light emitting element 47, respectively.

[0099] The configuration of the display device shown in FIG. 3B will be specifically described.

[0100] The display device shown in FIG. 3B is different from the display device shown in FIG. 3A in that it does not have the buffer layers 182, 192, 184, 194 and has the common layers 112, 114.

[0101] The light emitting element 47B has the common layer 112 between the pixel electrode 191 and the light emitting layer 193B, and has the common layer 114 between the light emitting layer 193B and the common electrode 115.

[0102] The light emitting element 47G has the common layer 112 between the pixel electrode 191 and the light emitting layer 193G, and has the common layer 114 between the light emitting layer 193B and the common electrode 115.

[0103] The light emitting element 47R has the common layer 112 between the pixel electrode 191 and the light emitting layer 193R, and has the common layer 114 between the light emitting layer 193B and the common electrode 115.

[0104] The light receiving element 46 has the common layer 112 between the pixel electrode 181 and the active layer 183, and has the common layer 114 between the light emitting layer 193B and the common electrode 115.

[0105] As an example of the display device shown in FIG. 3B, a configuration may be mentioned in which the common layer 112 has a hole injection layer and a hole transport layer, and the common layer 114 has an electron transport layer and an electron injection layer.

[0106] In the display device shown in FIG. 3B, an example is shown in which the light receiving element 46 and the light emitting elements 47 have a common configuration, except that the active layer 183 of the light receiving element 46, the light emitting layer 193R of the light emitting element 47R, and the light emitting layer 193G of the light emitting element 47G are made distinct. By using the layers common to the light receiving element 46 and the light emitting elements 47 (common layers) to reduce the layers (buffer layers) that are made distinct between the light receiving element 46 and the light emitting elements 47, the light receiving element 46 can be incorporated into the display device without significantly increasing the manufacturing process.

[0107] Further, in the display device shown in FIG. 3B, since the light emitting element 47B does not have a layer that is made distinct from other elements, the number of masks can be reduced. Thereby, the manufacturing cost of the display device can be reduced.

[0108] [Configuration Example 2] Next, the display devices shown in FIGS. 4A, 4B, 5A, and 5B will be described.

[0109] The display devices shown in FIGS. 4A, 4B, 5A, and 5B have a light emitting element 47B that emits blue (B) light, a light emitting element 47G that emits green (G) light, a light emitting element 47R that emits red (R) light, a light receiving element 46, a colored layer CFG, and a colored layer CFR on a substrate 151 via a layer 55 having a transistor. The display device shown in FIG. 5B further has a colored layer CFB.

[0110] The light emitting element 47B, the light emitting element 47G, and the light emitting element 47R each have a pixel electrode 191 and a common electrode 115.

[0111] The light receiving element 46 has a pixel electrode 181 and a common electrode 115.

[0112] The common electrode 115 is commonly used for the light receiving element 46 and the light emitting elements 47 that emit light of each color.

[0113] In the display devices shown in FIGS. 4A, 4B, and 5A, the light-emitting element 47R and the light-emitting element 47G have a common light-emitting layer. In FIGS. 4A and 4B, the light-emitting element 47R and the light-emitting element 47G have a light-emitting layer 193R that emits red light and a light-emitting layer 193G that emits green light. In FIG. 5A, the light-emitting element 47R and the light-emitting element 47G have a light-emitting layer 193Y that emits yellow light. The light emitted by the light-emitting element 47R is taken out from the display device as red light through the color filter layer CFR. The light emitted by the light-emitting element 47G is taken out from the display device as green light through the color filter layer CFG.

[0114] By making the light-emitting element 47R and the light-emitting element 47G have a common configuration, the number of film-forming steps and the number of masks can be reduced compared to a configuration in which the light-emitting element 47R and the light-emitting element 47G have layers that are separately formed from each other. Therefore, the manufacturing process and manufacturing cost of the display device can be reduced.

[0115] In addition, by making the light-emitting element 47R and the light-emitting element 47G have a common configuration, the margin for misalignment can be made narrower compared to a configuration in which the light-emitting element 47R and the light-emitting element 47G have layers that are separately formed from each other. As a result, the aperture ratio of the pixel can be increased, and the light extraction efficiency of the display device can be increased. The higher the aperture ratio of the pixel, the lower the luminance of the sub-pixels required to obtain a certain luminance in the display device. Thereby, the life of the light-emitting element can be extended. In addition, the display device can express high luminance. In addition, high definition of the display device is also possible.

[0116] In FIG. 5B, the light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B have a common light-emitting layer. Each light-emitting element has a light-emitting layer 193R that emits red light, a light-emitting layer 193G that emits green light, and a light-emitting layer 193B that emits blue light. The light emitted by the light-emitting element 47R is taken out from the display device as red light through the color filter layer CFR. The light emitted by the light-emitting element 47G is taken out from the display device as green light through the color filter layer CFG. The light emitted by the light-emitting element 47B is taken out from the display device as blue light through the color filter layer CFB.

[0117] By making the light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B have a common configuration, the number of film-forming steps and the number of masks can be reduced compared to a configuration in which the light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B have layers that are separately formed from each other. Therefore, the manufacturing process and manufacturing cost of the display device can be reduced.

[0118] Also, by making the light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B have a common configuration, the margin for misalignment can be narrowed compared to a configuration in which the light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B have layers that are separately formed from each other. As a result, the aperture ratio of the pixel can be increased, and the light extraction efficiency of the display device can be increased. The higher the aperture ratio of the pixel, the lower the luminance of the sub-pixels required to obtain a certain luminance in the display device. Thereby, the lifespan of the light-emitting element can be extended. Also, the display device can express high luminance. Also, high definition of the display device is possible.

[0119] The configuration of the display device shown in FIG. 4A will be specifically described.

[0120] The light-emitting element 47B has a common layer 112, a buffer layer 192B, a light-emitting layer 193B, and a common layer 114 in this order on the pixel electrode 191. The light-emitting layer 193B has a light-emitting material that emits blue light. The light-emitting element 47B has a function of emitting blue light.

[0121] The light-emitting element 47G and the light-emitting element 47R each have a common layer 112, a buffer layer 192, a light-emitting layer 193R, a light-emitting layer 193G, and a common layer 114 in this order on the pixel electrode 191. The light-emitting layer 193R has a light-emitting material that emits red light. The light-emitting layer 193G has a light-emitting material that emits green light. The light emitted by the light-emitting element 47G is taken out as green light through the coloring layer CFG. The light emitted by the light-emitting element 47R is taken out as red light through the coloring layer CFR.

[0122] The light-receiving element 46 has a common layer 112, a buffer layer 182, an active layer 183, and a common layer 114 in this order on the pixel electrode 181. The active layer 183 has an organic compound. The light-receiving element 46 has a function of detecting one or both of visible light and infrared light.

[0123] The light-emitting layer 193R and the light-emitting layer 193G are provided in common to the light-emitting element 47G and the light-emitting element 47R. On the other hand, the light-emitting layer 193B and the active layer 183 are layers made separately for each element. The light-emitting layer 193B is provided in the light-emitting element 47B, and the active layer 183 is provided in the light-receiving element 46.

[0124] As an example of the display device shown in FIG. 4A, there is a configuration in which the common layer 112 has a hole injection layer, the buffer layers 182, 192B, and 192 each have a hole transport layer, and the common layer 114 has one or both of an electron injection layer and an electron transport layer.

[0125] In addition, in FIG. 4A, an example is shown in which the light-emitting element 47G and the light-emitting element 47R have the same configuration. However, the light-emitting element 47G and the light-emitting element 47R may each have an optical adjustment layer with a different thickness. For example, it is preferable to perform optical adjustment by forming the pixel electrode 191 into a laminated structure of a reflective electrode and a transparent electrode on the reflective electrode, and making the thickness of the transparent electrode different between the light-emitting element 47G and the light-emitting element 47R. Specifically, the light-emitting element 47G may be provided with a transparent electrode such that the optical distance between the pair of electrodes becomes an optical distance that enhances green light, and the light-emitting element 47R may be provided with a transparent electrode such that the optical distance between the pair of electrodes becomes an optical distance that enhances red light. In addition, it is preferable that the light-emitting element 47B is optically adjusted using the buffer layer 192B such that the optical distance between the pair of electrodes becomes an optical distance that enhances blue light. Similarly, it is preferable that the light-receiving element 46 is optically adjusted using the buffer layer 182 such that the optical distance between the pair of electrodes becomes an optical distance that enhances light of the wavelength to be detected. Alternatively, an optical adjustment layer (transparent electrode) may be provided for each of the light-emitting element 47B and the light-receiving element 46.

[0126] The configuration of the display device shown in FIG. 4B will be specifically described.

[0127] The display device shown in FIG. 4B is different from the display devices shown in FIGS. 4A and 5A in that the light-emitting layer 193B is provided not only in the light-emitting element 47B that emits blue light but also in the light-emitting elements 47R and 47G that emit light of other colors and the light-receiving element 46.

[0128] In the light-emitting elements 47R and 47G and the light-receiving element 46, the light-emitting layer 193B functions as a carrier transport layer (in this embodiment, an electron transport layer).

[0129] Similar to Configuration Example 1, by reducing the number of layers fabricated separately for each element, the fabrication of the display device can be simplified. When the light-emitting layer 193B is provided not only for the light-emitting element 47B but also for the light-emitting elements and light-receiving elements that emit light of each color, the influence of the deviation of the pattern of the light-emitting layer 193B can be reduced, and the yield in the fabrication of the display device can be increased.

[0130] In addition, since a mask dedicated to forming the light-emitting layer 193B is not required, it is possible to reduce the manufacturing cost, shorten the manufacturing time, and improve the yield.

[0131] The configuration of the display device shown in FIG. 5A will be specifically described.

[0132] The display device shown in FIG. 5A is different from the display device shown in FIG. 4A in that the light-emitting element 47R and the light-emitting element 47G do not have a light-emitting layer 193R that emits red light and a light-emitting layer 193G that emits green light, but have a light-emitting layer 193Y that emits yellow light.

[0133] By reducing the number of light-emitting layers of the light-emitting element 47R and the light-emitting element 47G, the manufacturing process of the display device can be reduced.

[0134] Note that also in the display device shown in FIG. 5A, the light-emitting layer 193B can be configured to be provided not only for the light-emitting element 47B that emits blue light but also for the light-emitting elements 47R and 47G that emit light of other colors and the light-receiving element 46.

[0135] The configuration of the display device shown in FIG. 5B will be specifically described.

[0136] The display device shown in FIG. 5B is different from the display device shown in FIG. 4A in that the light-emitting elements 47R, 47G, and 47B have the same configuration, and the light emitted from the light-emitting element 47B is extracted through the coloring layer CFB.

[0137] The light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B each have, on the pixel electrode 191, a common layer 112, a buffer layer 192, a light-emitting layer 193R, a light-emitting layer 193G, a light-emitting layer 193B, and a common layer 114 in this order. The light-emitting layer 193R has a light-emitting material that emits red light. The light-emitting layer 193G has a light-emitting material that emits green light. The light-emitting layer 193B has a light-emitting material that emits blue light. The light emitted by the light-emitting element 47R is taken out as red light through the coloring layer CFR. The light emitted by the light-emitting element 47G is taken out as green light through the coloring layer CFG. The light emitted by the light-emitting element 47B is taken out as blue light through the coloring layer CFB.

[0138] Note that the light-emitting element 47 may have a single structure having one light-emitting unit between the pixel electrode 191 and the common electrode 115, or may have a tandem structure having a plurality of light-emitting units.

[0139] The light-receiving element 46 has, on the pixel electrode 181, a common layer 112, a buffer layer 182, an active layer 183, and a common layer 114 in this order. The active layer 183 contains an organic compound. The light-receiving element 46 has a function of detecting one or both of visible light and infrared light.

[0140] The light-emitting layer 193R, the light-emitting layer 193G, and the light-emitting layer 193B are provided in common to the light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B. By making the light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B have a common configuration, the number of film formation steps and the number of masks can be reduced as compared with a configuration in which the light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B have layers made separately from each other. Therefore, the manufacturing process and manufacturing cost of the display device can be reduced.

[0141] Also, in FIG. 5B, the light-emitting element 47R, the light-emitting element 47G, the light-emitting element 47B, and the light-receiving element 46 may each have an optical adjustment layer with a different thickness.

[0142] [Configuration Example 3] Next, the display device shown in FIGS. 6A, 6B, 7A, and 7B will be described.

[0143] The display devices shown in FIGS. 6A, 6B, 7A, and 7B have a light-emitting element 47B that emits blue (B) light, a light-emitting element 47G that emits green (G) light, a light-emitting element 47R that emits red (R) light, and a light-receiving element 46 on a substrate 151 via a layer 55 having transistors.

[0144] The light-emitting element 47B, the light-emitting element 47G, and the light-emitting element 47R each have a pixel electrode 191 and a common electrode 115.

[0145] The light-receiving element 46 has a pixel electrode 181 and a common electrode 115.

[0146] The common electrode 115 is commonly used for the light-receiving element 46 and the light-emitting elements 47 that emit light of each color.

[0147] In the display devices shown in FIGS. 6A, 7A, and 7B, the light-receiving element 46 and the light-emitting element 47R have a common light-emitting layer 193R and an active layer 183. In the display device shown in FIG. 6B, the light-receiving element 46 and the light-emitting element 47G have a common light-emitting layer 193G and an active layer 183.

[0148] Here, the light-receiving element 46 can have the same configuration as a light-emitting element that emits light having a longer wavelength than the light to be detected. For example, the light-receiving element 46 configured to detect blue light can have the same configuration as one or both of the light-emitting element 47R and the light-emitting element 47G. For example, the light-receiving element 46 configured to detect green light can have the same configuration as the light-emitting element 47R.

[0149] By making the light-receiving element 46 and the light-emitting element 47R or the light-emitting element 47G have the same configuration, the number of film formation steps and the number of masks can be reduced compared to a configuration in which the light-receiving element 46 and the light-emitting element 47R or the light-emitting element 47G have layers that are made separately from each other. Therefore, the manufacturing process and manufacturing cost of the display device can be reduced.

[0150] Moreover, by making the light-receiving element 46 and the light-emitting element 47R or the light-emitting element 47G have a common configuration, the margin against misalignment can be made narrower compared to a configuration in which the light-receiving element 46 and the light-emitting element 47R or the light-emitting element 47G have layers made separately from each other. As a result, the aperture ratio of the pixel can be increased, and the light extraction efficiency of the display device can be increased. Thereby, the lifespan of the light-emitting element can be extended. In addition, the display device can express high luminance. Also, high definition of the display device is possible.

[0151] The configuration of the display device shown in FIG. 6A will be specifically described.

[0152] The light-emitting element 47B has, on the pixel electrode 191, a common layer 112, a buffer layer 192B, a light-emitting layer 193B, and a common layer 114 in this order. The light-emitting layer 193B has a light-emitting material that emits blue light. The light-emitting element 47B has a function of emitting blue light.

[0153] The light-emitting element 47G has, on the pixel electrode 191, a common layer 112, a buffer layer 192G, a light-emitting layer 193G, and a common layer 114 in this order. The light-emitting layer 193G has a light-emitting material that emits green light. The light-emitting element 47G has a function of emitting green light.

[0154] The light-emitting element 47R and the light-receiving element 46 each have, on the pixel electrode, a common layer 112, a buffer layer 182, a light-emitting layer 193R, an active layer 183, and a common layer 114 in this order. The light-emitting layer 193R has a light-emitting material that emits red light. The active layer 183 has an organic compound that absorbs light with a wavelength shorter than that of red light (for example, one or both of green light and blue light). Preferably, the active layer 183 has an organic compound that hardly absorbs red light and absorbs light with a wavelength shorter than that of red light. As a result, red light is efficiently extracted from the light-emitting element 47R, and the light-receiving element 46 can detect light with a wavelength shorter than that of red light with high accuracy.

[0155] In addition, in FIG. 6A, an example in which the light-emitting element 47R and the light-receiving element 46 have the same configuration is shown. However, the light-emitting element 47R and the light-receiving element 46 may each have an optical adjustment layer with a different thickness. For example, the pixel electrode 191 and the pixel electrode 181 are formed as a laminated structure of a reflective electrode and a transparent electrode on the reflective electrode, and it is preferable to perform optical adjustment by making the thickness of the transparent electrode different between the light-emitting element 47R and the light-receiving element 46. Specifically, for the light-emitting element 47R, it is preferable that a transparent electrode is provided so that the optical distance between a pair of electrodes becomes an optical distance that enhances red light. For the light-receiving element 46, it is preferable that a transparent electrode is provided so that the optical distance between a pair of electrodes becomes an optical distance that enhances light of a wavelength to be detected. Thereby, the light-emitting element 47R can efficiently extract red light, and the light-receiving element 46 can detect light with high accuracy. Further, it is preferable that the light-emitting element 47G is optically adjusted using the buffer layer 192G so that the optical distance between a pair of electrodes becomes an optical distance that enhances green light. Similarly, it is preferable that the light-emitting element 47B is optically adjusted using the buffer layer 192B so that the optical distance between a pair of electrodes becomes an optical distance that enhances blue light. Alternatively, an optical adjustment layer (transparent electrode) may be provided for each of the light-emitting element 47G and the light-emitting element 47B.

[0156] For example, the common layer 112 may have a hole injection layer, the buffer layers 182, 192B, and 192G may each have a hole transport layer, and the common layer 114 may have one or both of an electron injection layer and an electron transport layer.

[0157] The configuration of the display device shown in FIG. 6B will be specifically described.

[0158] The light-emitting element 47B shown in FIG. 6B has the same configuration as that in FIG. 6A.

[0159] The light-emitting element 47R has, in this order, a common layer 112, a buffer layer 192R, a light-emitting layer 193R, and a common layer 114 on the pixel electrode 191. The light-emitting layer 193R has a light-emitting material that emits red light. The light-emitting element 47R has a function of emitting red light.

[0160] The light-emitting element 47G and the light-receiving element 46 each have, on the pixel electrode, a common layer 112, a buffer layer 182, a light-emitting layer 193G, an active layer 183, and a common layer 114 in this order. The light-emitting layer 193G has a light-emitting material that emits green light. The active layer 183 has an organic compound that absorbs light with a shorter wavelength than green light (for example, blue light). The active layer 183 preferably has an organic compound that is less likely to absorb light from red to green and absorbs light with a shorter wavelength than green light. Thereby, green light is efficiently extracted from the light-emitting element 47G, and the light-receiving element 46 can detect light with a shorter wavelength than green light with high accuracy.

[0161] Note that the thicknesses of the pixel electrode or the buffer layer of the light-emitting element 47G and the light-receiving element 46 may be different from each other. Specifically, the light-emitting element 47G may be optically adjusted so that the optical distance between a pair of electrodes is an optical distance that enhances green light, and the light-receiving element 46 may be optically adjusted so that the optical distance between a pair of electrodes is an optical distance that enhances light of a wavelength to be detected. Thereby, the light-emitting element 47G can efficiently extract green light, and the light-receiving element 46 can detect light with high accuracy.

[0162] In the display device of this embodiment, an organic compound is used for the active layer 183 of the light-receiving element 46. The light-receiving element 46 can be manufactured by only changing at least a part of the configuration between a pair of electrodes in the light-emitting element 47. Therefore, the light-receiving element 46 can be incorporated in the display unit of the display device. Also, the light-receiving element can have a configuration common to a light-emitting element that emits red or green light. In this way, by making at least a part of the layers constituting the light-emitting element and the light-receiving element have a common configuration, the manufacturing process of the display device can be reduced.

[0163] The configuration of the display device shown in FIG. 7A will be specifically described.

[0164] The display device shown in FIG. 7A is different from the display device shown in FIG. 6A in that the light-emitting element 47R and the light-receiving element 46 do not have the buffer layer 182, and the light-emitting layer 193R is located on the active layer 183.

[0165] The stacking order of the active layer 183 and the light-emitting layer 193R is not limited. The light-emitting layer 193R may be provided on the active layer 183, or the active layer 183 may be provided on the light-emitting layer 193R.

[0166] As the buffer layers 192B and 192G, for example, a hole transport layer can be used. The light-emitting elements 47R and the light-receiving element 46 do not necessarily have a hole transport layer. Thus, among the light-emitting elements 47R, 47G, 47B, and the light-receiving element 46, there may be a layer (for example, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole blocking layer, an electron blocking layer, etc.) provided in one element and not provided in other elements.

[0167] The configuration of the display device shown in FIG. 7B will be specifically described.

[0168] The display device shown in FIG. 7B is different from the display device shown in FIG. 6A in that it has the buffer layer 182 between the active layer 183 and the light-emitting layer 193R.

[0169] The light-emitting layer 193R and the active layer 183 may be in contact with each other, or a layer may be sandwiched therebetween.

[0170] By providing a buffer layer between the active layer 183 and the light-emitting layer 193R, the transfer of excitation energy from the light-emitting layer 193R to the active layer 183 can be suppressed. Also, the optical path length (cavity length) of the microcavity structure can be adjusted using the buffer layer. Therefore, high luminous efficiency can be obtained from the light-emitting element 47R having the buffer layer between the active layer 183 and the light-emitting layer 193R.

[0171] For example, the common layer 112 may have a hole injection layer, the buffer layers 182, 192B, and 192G may each have a hole transport layer, and the common layer 114 may have one or both of an electron injection layer and an electron transport layer. Further, the common layer 112 may further have a hole transport layer. That is, the light-emitting element and the light-receiving element may each have both the hole transport layer included in the common layer 112 and the hole transport layer included in the buffer layer.

[0172] Hereinafter, with reference to FIGS. 8 and 9, the configuration of a display device according to an aspect of the present invention will be described.

[0173] [Display device 10A] FIG. 8A shows a cross-sectional view of the display device 10A. The configuration of FIG. 3B described in Configuration Example 1 is applied to the display device 10A. Details of each layer can be referred to the description of Configuration Example 1.

[0174] The display device 10A includes a light-receiving element 110, a light-emitting element 190B, and a light-emitting element 190G. The light-receiving element 110 has a function of detecting light 22. The wavelength of the light 22 detected by the light-receiving element 110 is not particularly limited, and for example, one or both of visible light and infrared light can be detected. The light-emitting element 190B has a function of emitting blue light 21B. The light-emitting element 190G has a function of emitting green light 21G.

[0175] The light-emitting element 190B includes a pixel electrode 191, a common layer 112, a light-emitting layer 193B, a common layer 114, and a common electrode 115.

[0176] The light-emitting element 190G includes a pixel electrode 191, a common layer 112, a light-emitting layer 193G, a light-emitting layer 193B, a common layer 114, and a common electrode 115.

[0177] The light-receiving element 110 includes a pixel electrode 181, a common layer 112, an active layer 183, a light-emitting layer 193B, a common layer 114, and a common electrode 115.

[0178] The pixel electrode 181 and the pixel electrode 191 are located on the insulating layer 214. The pixel electrode 181 and the pixel electrode 191 can be formed of the same material and in the same process.

[0179] The common layer 112 is located on the pixel electrode 181 and on the pixel electrode 191. The common layer 112 is a layer that is commonly used for the light receiving element 110, the light emitting element 190B, and the light emitting element 190G. As the common layer 112, for example, one or both of a hole injection layer and a hole transport layer can be formed.

[0180] The active layer 183 overlaps with the pixel electrode 181 via the common layer 112. The light emitting layer 193G overlaps with the pixel electrode 191 via the common layer 112. The light emitting layer 193B overlaps with the pixel electrode 181 via the common layer 112 and the active layer 183. The light emitting layer 193B overlaps with the pixel electrode 191 of the light emitting element 190G via the common layer 112 and the light emitting layer 193G. The light emitting layer 193B overlaps with the pixel electrode 191 of the light emitting element 190B via the common layer 112.

[0181] The common layer 114 is located on the light emitting layer 193B. The common layer 114 is a layer that is commonly used for the light receiving element 110, the light emitting element 190B, and the light emitting element 190G. As the common layer 114, for example, one or both of an electron injection layer and an electron transport layer can be formed.

[0182] The common electrode 115 has a portion that overlaps with the pixel electrode 181 via the common layer 112, the active layer 183, the light emitting layer 193B, and the common layer 114. The common electrode 115 has a portion that overlaps with the pixel electrode 191 of the light emitting element 190G via the common layer 112, the light emitting layer 193G, the light emitting layer 193B, and the common layer 114. The common electrode 115 has a portion that overlaps with the pixel electrode 191 of the light emitting element 190B via the common layer 112, the light emitting layer 193B, and the common layer 114. The common electrode 115 is a layer that is commonly used for the light receiving element 110, the light emitting element 190B, and the light emitting element 190G.

[0183] In the display device of this embodiment, an organic compound is used for the active layer 183 of the light-receiving element 110. The light-receiving element 110 can be manufactured by only changing at least a part of the configuration between a pair of electrodes in the light-emitting element 190 (EL element). That is, the light-emitting element 190 and the light-receiving element 110 can be formed on the same substrate. Further, the light-receiving element 110 can be formed in parallel with the formation of the light-emitting element 190. Therefore, the light-receiving element 110 can be incorporated into the display unit of the display device without significantly increasing the manufacturing process.

[0184] In the display device 10A, an example is shown in which the light-receiving element 110 and the light-emitting element 190G have a common configuration except that the active layer 183 of the light-receiving element 110 and the light-emitting layer 193G of the light-emitting element 190G are made different. However, the configurations of the light-receiving element 110 and the light-emitting element 190G are not limited to this. The light-receiving element 110 and the light-emitting element 190G may have layers that are made different from each other in addition to the active layer 183 and the light-emitting layer 193G. The light-receiving element 110 and the light-emitting element 190G preferably have one or more layers (common layers) that are commonly used. Thereby, the light-receiving element 110 can be incorporated into the display device without significantly increasing the manufacturing process.

[0185] In the display device 10A shown in FIG. 8A, the light-emitting layer 193B that emits blue light is provided not only in the light-emitting element 190B that emits blue light but also in the light-emitting element 190G and the light-receiving element 110. In the light-emitting element 190G and the light-receiving element 110, the light-emitting layer 193B functions as a carrier transport layer. By providing the light-emitting layer 193B in the light-emitting element and the light-receiving element that emit light of each color, the influence of the deviation of the pattern of the light-emitting layer 193B can be reduced, and the yield in the manufacture of the display device can be increased.

[0186] The display device 10A has a light-receiving element 110, a light-emitting element 190B, a light-emitting element 190G, a transistor 41, a transistor 42, etc. between a pair of substrates (substrate 151 and substrate 152).

[0187] In the light-receiving element 110, the common layer 112, the active layer 183, and the common layer 114, which are respectively located between the pixel electrode 181 and the common electrode 115, can also be referred to as organic layers (layers containing organic compounds). The pixel electrode 181 preferably has a function of reflecting visible light. The end portion of the pixel electrode 181 is covered by the partition wall 216. The common electrode 115 has a function of transmitting visible light.

[0188] The light-receiving element 110 has a function of detecting light. Specifically, the light-receiving element 110 is a photoelectric conversion element that receives the light 22 incident from the outside of the display device 10A and converts it into an electrical signal. The light 22 can also be the light reflected by the object from the light emitted by the light-emitting element 190. Further, the light 22 may be incident on the light-receiving element 110 through a lens described later.

[0189] It is preferable to provide a light-shielding layer BM on the surface of the substrate 152 on the side of the substrate 151. The light-shielding layer BM has openings at positions overlapping the light-receiving element 110 and the light-emitting element 190. By providing the light-shielding layer BM, the range in which the light-receiving element 110 detects light can be controlled.

[0190] Here, the light-receiving element 110 detects the light reflected by the object from the light emitted by the light-emitting element 190. However, the light emitted by the light-emitting element 190 may be reflected within the display device 10A and incident on the light-receiving element 110 without passing through the object. The light-shielding layer BM can suppress the influence of such stray light. For example, when the light-shielding layer BM is not provided, the light 23a emitted by the light-emitting element 190 may be reflected by the substrate 152, and the reflected light 23b may be incident on the light-receiving element 110. By providing the light-shielding layer BM, it is possible to suppress the reflected light 23b from being incident on the light-receiving element 110. Thereby, noise can be reduced and the sensitivity of the sensor using the light-receiving element 110 can be increased.

[0191] In the light-emitting element 190, the common layer 112, the light-emitting layer 193, and the common layer 114, which are respectively located between the pixel electrode 191 and the common electrode 115, can also be referred to as an EL layer. The pixel electrode 191 preferably has a function of reflecting visible light. The end portion of the pixel electrode 191 is covered by the partition wall 216. The pixel electrode 181 and the pixel electrode 191 are electrically insulated from each other (also referred to as electrically separated) by the partition wall 216. The common electrode 115 has a function of transmitting visible light.

[0192] The light-emitting element 190B is an electroluminescent element that emits blue light 21B toward the substrate 152 side by applying a voltage between the pixel electrode 191 and the common electrode 115.

[0193] The light-emitting element 190G is an electroluminescent element that emits green light 21G toward the substrate 152 side by applying a voltage between the pixel electrode 191 and the common electrode 115.

[0194] The pixel electrode 181 is electrically connected to the source or drain of the transistor 41 through an opening provided in the insulating layer 214. The end portion of the pixel electrode 181 is covered by the partition wall 216.

[0195] The pixel electrode 191 is electrically connected to the source or drain of the transistor 42 through an opening provided in the insulating layer 214. The end portion of the pixel electrode 191 is covered by the partition wall 216. The transistor 42 has a function of controlling the driving of the light-emitting element 190.

[0196] The transistor 41 and the transistor 42 are in contact with each other on the same layer (substrate 151 in FIG. 8A).

[0197] At least a part of the circuit electrically connected to the light-receiving element 110 is preferably formed of the same material and in the same process as the circuit electrically connected to the light-emitting element 190. Thereby, compared with the case where the two circuits are formed separately, the thickness of the display device can be reduced, and the manufacturing process can be simplified.

[0198] The light-receiving element 110 and the light-emitting element 190 are each preferably covered with a protective layer 195. In FIG. 8A, the protective layer 195 is provided in contact with the common electrode 115. By providing the protective layer 195, it is possible to suppress the entry of impurities such as water into the light-receiving element 110 and the light-emitting element 190, and improve the reliability of the light-receiving element 110 and the light-emitting element 190. Further, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142.

[0199] [Display device 10B] FIG. 8B shows a cross-sectional view of the display device 10B. The configuration described in Configuration Example 2 is applied to the display device 10B. In the following description of the display device, the description of the same configuration as the previously described display device may be omitted.

[0200] The display device 10B includes a light-receiving element 110, a light-emitting element 190R, and a light-emitting element 190G. The light-receiving element 110 has a function of detecting light 22. The light-emitting element 190R has a function of emitting red light 21R. The light-emitting element 190G has a function of emitting green light 21G.

[0201] The light-emitting element 190R and the light-emitting element 190G have the same configuration. Specifically, the light-emitting element 190R and the light-emitting element 190G include a pixel electrode 191, a common layer 112, a light-emitting layer 193, a common layer 114, and a common electrode 115. The light-emitting layer 193 may have a single-layer structure or a stacked structure. As the light-emitting layer 193, for example, as shown in FIG. 4A, a configuration having a light-emitting layer 193R that emits red light and a light-emitting layer 193G that emits green light, or as shown in FIG. 5A, a configuration having a light-emitting layer 193Y that emits yellow light can be applied.

[0202] A red coloring layer CFR and a green coloring layer CFG are provided on the side of the substrate 152 on the substrate 151 side. The light emitted by the light-emitting element 190R is taken out from the display device 10B as red light through the coloring layer CFR. The light emitted by the light-emitting element 190G is taken out from the display device 10B as green light through the coloring layer CFG.

[0203] The light-receiving element 110 includes a pixel electrode 181, a common layer 112, an active layer 183, a common layer 114, and a common electrode 115.

[0204] In the display device 10B, an example is shown in which the light-receiving element 110, the light-emitting elements 190G and 190R have a common configuration except that the active layer 183 of the light-receiving element 110 and the light-emitting layers 193 of the light-emitting elements 190G and 190R are made different. However, the configurations of the light-receiving element 110, the light-emitting elements 190G and 190R are not limited to this. The light-receiving element 110, the light-emitting elements 190G and 190R may have layers that are different from each other in addition to the active layer 183 and the light-emitting layer 193. The light-receiving element 110, the light-emitting elements 190G and 190R preferably have one or more commonly used layers (common layers). Thereby, the light-receiving element 110 can be incorporated into the display device without significantly increasing the manufacturing process.

[0205] [Display device 10C] FIG. 8C shows a cross-sectional view of the display device 10C. The configuration of FIG. 6A described in Configuration Example 3 is applied to the display device 10C.

[0206] The display device 10C includes a light-receiving element 110, a light-emitting element 190R, and a light-emitting element 190G. The light-receiving element 110 has a function of detecting light 22. The light-emitting element 190R has a function of emitting red light 21R. The light-emitting element 190G has a function of emitting green light 21G.

[0207] The light-emitting element 190R and the light-receiving element 110 have the same configuration. Specifically, the light-emitting element 190R and the light-receiving element 110 include a pixel electrode, a common layer 112, a light-emitting layer 193R, an active layer 183, a common layer 114, and a common electrode 115. In FIG. 8C and the like, the light-emitting layer 193R and the active layer 183 are shown as one layer, but the light-emitting layer 193R and the active layer 183 are separate layers.

[0208] The light-emitting element 190G includes a pixel electrode 191, a common layer 112, a light-emitting layer 193G, a common layer 114, and a common electrode 115.

[0209] In the display device 10C, an example is shown in which the light-receiving element 110 and the light-emitting elements 190R and 190G have a common configuration, except that the active layer 183 and the light-emitting layer 193R of the light-receiving element 110 and the light-emitting element 190R, and the light-emitting layer 193G of the light-emitting element 190G are made separately. However, the configurations of the light-receiving element 110 and the light-emitting elements 190G and 190R are not limited to this.

[0210] [Display device 10D] FIG. 9A shows a cross-sectional view of the display device 10D.

[0211] The display device 10D is different from the display device 10A in that it does not have a protective layer 195 and has a lens 149.

[0212] The display device of the present embodiment may not have a protective layer on the light-receiving element 110 and the light-emitting element 190. In FIG. 9A, the common electrode 115 and the substrate 152 are bonded together by an adhesive layer 142.

[0213] The display device of the present embodiment may have a lens 149. The lens 149 is provided at a position overlapping the light-receiving element 110. In the display device 10D, the lens 149 is provided in contact with the substrate 152. The lens 149 included in the display device 10D has a convex surface on the substrate 151 side.

[0214] When both the light-shielding layer BM and the lens 149 are formed on the same surface of the substrate 152, the formation order does not matter. In FIG. 9A, an example in which the lens 149 is formed first is shown, but the light-shielding layer BM may be formed first. In FIG. 9A, the end portion of the lens 149 is covered by the light-shielding layer BM.

[0215] The light receiving device 10D is configured such that light 22 is incident on the light receiving element 110 via the lens 149. Having the lens 149 can narrow the imaging range of the light receiving element 110 compared to the case without the lens 149, and can suppress the imaging ranges of adjacent light receiving elements 110 from overlapping. As a result, a clear image with little blurring can be captured. Also, when the imaging ranges of the light receiving elements 110 are the same, having the lens 149 can increase the size of the pinhole (corresponding to the size of the opening of the light shielding layer BM that overlaps the light receiving element 110 in FIG. 9A) compared to the case without the lens 149. Therefore, having the lens 149 can increase the amount of light incident on the light receiving element 110.

[0216] Also, the lens 149 having a convex surface on the substrate 152 side may be provided in contact with the upper surface of the protective layer 195. Also, a lens array may be provided on the display surface side of the substrate 152 (the side opposite to the surface on the substrate 151 side). The lens included in the lens array is provided at a position overlapping the light receiving element 110. It is preferable that a light shielding layer BM is provided on the surface of the substrate 152 on the substrate 151 side.

[0217] As a method for forming the lens used in the display device of the present embodiment, a lens such as a microlens may be directly formed on the substrate or on the light receiving element, or a lens array such as a separately manufactured microlens array may be bonded to the substrate.

[0218] [Display device 10E] FIG. 9B shows a cross-sectional view of the display device 10E.

[0219] The display device 10E is different from the display device 10B in that it does not have the substrates 151 and 152, but has the substrates 153, 154, the adhesive layer 155, and the insulating layer 212.

[0220] The substrate 153 and the insulating layer 212 are bonded together by the adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by the adhesive layer 142.

[0221] The display device 10E is configured to be manufactured by transferring an insulating layer 212, transistors 41 and 42, a light receiving element 110, a light emitting element 190, etc., formed on a manufacturing substrate, onto a substrate 153. The substrate 153 and the substrate 154 preferably each have flexibility. Thereby, the flexibility of the display device 10E can be enhanced. For example, it is preferable to use resin for the substrate 153 and the substrate 154 respectively. Also, a film with high optical isotropy may be used for the substrate of the display device of the present embodiment.

[0222] [Display device 10F] Fig. 9C shows a cross-sectional view of the display device 10F.

[0223] The display device 10F is different from the display device 10C in that it does not have the partition wall 216 and has the partition wall 217.

[0224] The partition wall 217 preferably absorbs the light emitted by the light emitting element. As the partition wall 217, for example, a resin material containing a pigment or a dye can be used to form a black matrix. Also, by using a brown resist material, the partition wall 217 can be constituted by a colored insulating layer.

[0225] The light emitted by the light emitting element 190 may be reflected by the substrate 152 and the partition wall 217, and the reflected light may enter the light receiving element 110. Also, the light emitted by the light emitting element 190 may pass through the partition wall 217 and be reflected by a transistor or wiring, etc., and the reflected light may enter the light receiving element 110. By absorbing the light by the partition wall 217, it is possible to suppress such reflected light from entering the light receiving element 110. Thereby, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be enhanced.

[0226] The partition wall 217 preferably absorbs at least the wavelength of the light detected by the light receiving element 110. For example, when the light receiving element 110 detects the green light 21G emitted by the light emitting element 190G, the partition wall 217 preferably absorbs at least the green light. For example, if the partition wall 217 has a red color filter, it can absorb the green light and suppress the incident of the reflected light on the light receiving element 110.

[0227] In addition, a colored layer that absorbs light may be provided in contact with one or both of the upper surface and the side surface of the partition wall that transmits light. The colored layer preferably absorbs the light emitted by the light emitting element. As the colored layer, for example, a black matrix can be formed using a resin material containing a pigment or a dye. Also, by using a brown resist material, a colored layer can be constituted by a colored insulating layer.

[0228] The colored layer preferably absorbs at least the wavelength of the light detected by the light receiving element 110. For example, when the light receiving element 110 detects the green light 21G emitted by the light emitting element 190G, the colored layer preferably absorbs at least the green light. For example, if the colored layer has a red color filter, it can absorb the green light and suppress the incident of the reflected light on the light receiving element 110.

[0229] By the colored layer absorbing the stray light generated in the display device 10F, the amount of stray light incident on the light receiving element 110 can be reduced. Thereby, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be enhanced.

[0230] In the display device of the present embodiment, the colored layer is disposed between the light receiving element 110 and the light emitting element 190. Thereby, the stray light incident from the light emitting element 190 on the light receiving element 110 can be suppressed.

[0231] Hereinafter, with reference to FIGS. 10 to 14, a more detailed configuration of the display device according to one aspect of the present invention will be described. In FIGS. 10 to 14, mainly, a display device to which the configuration of FIG. 3B described in Configuration Example 1 is applied is shown. However, the configuration described in Configuration Example 2 or Configuration Example 3 can also be applied to the display device according to one aspect of the present invention.

[0232] [Display Device 100A] FIG. 10 shows a perspective view of the display device 100A, and FIG. 11 shows a cross-sectional view of the display device 100A.

[0233] The display device 100A has a configuration in which a substrate 152 and a substrate 151 are bonded together. In FIG. 10, the substrate 152 is explicitly shown by a dashed line.

[0234] The display device 100A includes a display unit 162, a circuit 164, a wiring 165, etc. FIG. 10 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on the display device 100A. Therefore, the configuration shown in FIG. 10 can also be referred to as a display module having the display device 100A, the IC, and the FPC.

[0235] As the circuit 164, for example, a scanning line driving circuit can be used.

[0236] The wiring 165 has a function of supplying signals and power to the display unit 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or from the IC 173.

[0237] In FIG. 10, an example is shown in which the IC 173 is provided on the substrate 151 by a COG (Chip On Glass) method or a COF (Chip on Film) method, etc. As the IC 173, for example, an IC having a scanning line driving circuit or a signal line driving circuit, etc. can be applied. Note that the display device 100A and the display module may have a configuration without providing an IC. Also, the IC may be mounted on the FPC by a COF method or the like.

[0238] FIG. 11 shows an example of a cross section when a part of the region including the FPC 172, a part of the region including the circuit 164, a part of the region including the display unit 162, and a part of the region including the end portion of the display device 100A shown in FIG. 10 are each cut.

[0239] The display device 100A shown in FIG. 11 has a transistor 201, a transistor 205, a transistor 206, a transistor 207, a light emitting element 190B, a light emitting element 190G, a light receiving element 110, etc. between the substrate 151 and the substrate 152.

[0240] The substrate 152 and the insulating layer 214 are adhered via an adhesive layer 142. For the encapsulation of the light emitting element 190 and the light receiving element 110, a solid encapsulation structure or a hollow encapsulation structure, etc. can be applied. In FIG. 11, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is filled with an inert gas (such as nitrogen or argon), and a hollow encapsulation structure is applied. The adhesive layer 142 may be provided overlapping the light emitting element 190. Also, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from the adhesive layer 142.

[0241] The light emitting element 190B has a stacked structure in which a pixel electrode 191B, a common layer 112, a light emitting layer 193B, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191B is connected to the conductive layer 222b of the transistor 206 through an opening provided in the insulating layer 214. The transistor 206 has a function of controlling the driving of the light emitting element 190B. The end portion of the pixel electrode 191B is covered by a partition wall 216. The pixel electrode 191B contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.

[0242] The light-emitting element 190G has a stacked structure in which a pixel electrode 191G, a common layer 112, a light-emitting layer 193G, a light-emitting layer 193B, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191G is connected to a conductive layer 222b included in the transistor 207 through an opening provided in the insulating layer 214. The transistor 207 has a function of controlling the driving of the light-emitting element 190G. An end portion of the pixel electrode 191G is covered by a partition wall 216. The pixel electrode 191G contains a material that reflects visible light.

[0243] The light-receiving element 110 has a stacked structure in which a pixel electrode 181, a common layer 112, an active layer 183, a light-emitting layer 193B, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 181 is electrically connected to a conductive layer 222b included in the transistor 205 through an opening provided in the insulating layer 214. An end portion of the pixel electrode 181 is covered by a partition wall 216. The pixel electrode 181 contains a material that reflects visible light.

[0244] The light emitted from the light-emitting element 190 is emitted toward the substrate 152 side. Further, light enters the light-receiving element 110 through the substrate 152 and the space 143. It is preferable to use a material having high transmittance for visible light for the substrate 152.

[0245] The pixel electrode 181, the pixel electrode 191B, and the pixel electrode 191G can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are commonly used for the light-receiving element 110 and the light-emitting elements 190 of each color. The light-receiving element 110 has a configuration in which an active layer 183 is added to the configuration of the light-emitting element 190B. Further, the light-receiving element 110 and the light-emitting element 190G can have the same configuration except that the configurations of the active layer 183 and the light-emitting layer 193G are different. Thereby, the light-receiving element 110 can be incorporated into the display device 100A without significantly increasing the manufacturing process.

[0246] On the surface of the substrate 152 on the side of the substrate 151, a light-shielding layer BM is provided. The light-shielding layer BM has openings at positions overlapping the light-receiving element 110 and positions overlapping the light-emitting element 190. By providing the light-shielding layer BM, the range in which the light-receiving element 110 detects light can be controlled. Also, by having the light-shielding layer BM, it is possible to suppress light from directly entering from the light-emitting element 190 to the light-receiving element 110 without passing through an object. Therefore, a sensor with less noise and high sensitivity can be realized.

[0247] The transistor 201, the transistor 205, the transistor 206, and the transistor 207 are all formed on the substrate 151. These transistors can be fabricated by the same material and the same process.

[0248] On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistors. The insulating layer 214 is provided to cover the transistors and has a function as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0249] It is preferable to use a material in which impurities such as water and hydrogen hardly diffuse in at least one of the insulating layers covering the transistors. Thereby, the insulating layer can function as a barrier layer. With such a configuration, it is possible to effectively suppress the diffusion of impurities from the outside into the transistors, and the reliability of the display device can be improved.

[0250] As the insulating layers 211, 213, and 215, it is preferable to use inorganic insulating films respectively. As the inorganic insulating film, for example, inorganic insulating films such as silicon nitride film, silicon oxynitride film, silicon oxide film, silicon nitride oxide film, aluminum oxide film, and aluminum nitride film can be used. Further, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, etc. may be used. Also, two or more of the above-mentioned insulating films may be laminated and used.

[0251] Here, the organic insulating film often has lower barrier properties than the inorganic insulating film. Therefore, it is preferable that the organic insulating film has an opening near the end of the display device 100A. Thereby, it is possible to suppress impurities from entering through the organic insulating film from the end of the display device 100A. Alternatively, the organic insulating film may be formed such that the end of the organic insulating film is inside the end of the display device 100A so that the organic insulating film is not exposed at the end of the display device 100A.

[0252] The insulating layer 214 that functions as a planarization layer is preferably an organic insulating film. Examples of the material that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins.

[0253] In the region 228 shown in FIG. 11, an opening is formed in the insulating layer 214. Thereby, even when an organic insulating film is used for the insulating layer 214, it is possible to suppress impurities from entering the display unit 162 from the outside through the insulating layer 214. Therefore, the reliability of the display device 100A can be improved.

[0254] Transistors 201, 205, 206, and 207 include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to a plurality of layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0255] The structure of the transistor included in the display device of the present embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverse staggered transistor, or the like can be used. Also, either a top gate type or a bottom gate type transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0256] In transistors 201, 205, 206, and 207, a configuration in which a semiconductor layer in which a channel is formed is sandwiched between two gates is applied. The transistor may be driven by connecting the two gates and supplying the same signal thereto. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0257] The crystallinity of the semiconductor material used for the transistor is not particularly limited either, and any of an amorphous semiconductor, a semiconductor having crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystal region in part) may be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed.

[0258] The semiconductor layer of the transistor preferably has a metal oxide (also referred to as an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon, crystalline silicon (such as low-temperature polysilicon, single-crystal silicon, etc.).

[0259] The semiconductor layer preferably contains, for example, indium, one or more elements M (where M is selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0260] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also denoted as IGZO) as the semiconductor layer.

[0261] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of the atomic ratio of the metal elements in such an In-M-Zn oxide include compositions such as In:M:Zn = 1:1:1 or in the vicinity thereof, In:M:Zn = 1:1:1.2 or in the vicinity thereof, In:M:Zn = 2:1:3 or in the vicinity thereof, In:M:Zn = 3:1:2 or in the vicinity thereof, In:M:Zn = 4:2:3 or in the vicinity thereof, In:M:Zn = 4:2:4.1 or in the vicinity thereof, In:M:Zn = 5:1:3 or in the vicinity thereof, In:M:Zn = 5:1:6 or in the vicinity thereof, In:M:Zn = 5:1:7 or in the vicinity thereof, In:M:Zn = 5:1:8 or in the vicinity thereof, In:M:Zn = 6:1:6 or in the vicinity thereof, In:M:Zn = 5:2:5 or in the vicinity thereof, etc. The composition in the vicinity means including a range of ±30% of the desired atomic ratio.

[0262] For example, when the atomic ratio is described as In:Ga:Zn = 4:2:3 or a composition in the vicinity thereof, when the atomic ratio of In is 4, it includes cases where the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. Further, when the atomic ratio is described as In:Ga:Zn = 5:1:6 or a composition in the vicinity thereof, when the atomic ratio of In is 5, it includes cases where the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. Further, when the atomic ratio is described as In:Ga:Zn = 1:1:1 or a composition in the vicinity thereof, when the atomic ratio of In is 1, it includes cases where the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0263] The transistors included in circuit 164 and the transistors included in display unit 162 may have the same structure or different structures. The structures of the plurality of transistors included in circuit 164 may all be the same or there may be two or more types. Similarly, the structures of the plurality of transistors included in display unit 162 may all be the same or there may be two or more types.

[0264] In a region of substrate 151 where substrate 152 does not overlap, connection portion 204 is provided. In connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. On the upper surface of connection portion 204, conductive layer 166 obtained by processing the same conductive film as pixel electrode 191 is exposed. Thereby, connection portion 204 and FPC 172 can be electrically connected via connection layer 242.

[0265] Various optical members can be arranged outside substrate 152. Examples of the optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an antireflection layer, and a condensing film. Further, outside substrate 152, an antistatic film for suppressing dust adhesion, a water-repellent film for making it difficult for dirt to adhere, a hard coat film for suppressing the occurrence of scratches during use, a shock absorption layer, etc. may be arranged.

[0266] For the substrate 151 and the substrate 152, glass, quartz, ceramic, sapphire, resin, etc. can be used respectively. When a flexible material is used for the substrate 151 and the substrate 152, the flexibility of the display device can be enhanced.

[0267] As the adhesive layer, various curable adhesives such as photocurable adhesives such as ultraviolet curable type, reaction curable adhesives, thermosetting adhesives, anaerobic adhesives, etc. can be used. Examples of these adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, etc. In particular, materials with low moisture permeability such as epoxy resin are preferred. Also, a two-component mixed resin may be used. Also, an adhesive sheet or the like may be used.

[0268] As the connection layer 242, an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), etc. can be used.

[0269] The light-emitting element 190 includes a top emission type, a bottom emission type, a dual emission type, etc. For the electrode on the side where light is extracted, a conductive film that transmits visible light is used. Also, for the electrode on the side where light is not extracted, it is preferable to use a conductive film that reflects visible light.

[0270] The light-emitting element 190 has at least a light-emitting layer 193. The light-emitting element 190 may further have a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, a substance with high electron transport property, a substance with high electron injection property, or a bipolar substance (a substance with high electron transport property and high hole transport property), etc. as a layer other than the light-emitting layer 193. For example, the common layer 112 preferably has one or both of a hole injection layer and a hole transport layer. For example, the common layer 114 preferably has one or both of an electron transport layer and an electron injection layer.

[0271] For the common layer 112, the light-emitting layer 193, and the common layer 114, either a low-molecular compound or a high-molecular compound can be used, and they may contain an inorganic compound. The layers constituting the common layer 112, the light-emitting layer 193, and the common layer 114 can be formed by methods such as vapor deposition (including vacuum vapor deposition), transfer method, printing method, inkjet method, coating method, etc.

[0272] The light-emitting layer 193 is a layer containing a light-emitting substance. The light-emitting layer 193 can have one or more light-emitting substances. As the light-emitting substance, substances exhibiting light-emitting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, red, etc. are appropriately used. Also, as the light-emitting substance, a substance emitting near-infrared light can be used.

[0273] The active layer 183 of the light-receiving element 110 contains a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In this embodiment, an example of using an organic semiconductor as the semiconductor of the active layer is shown. By using an organic semiconductor, the light-emitting layer 193 of the light-emitting element 190 and the active layer 183 of the light-receiving element 110 can be formed by the same method (for example, vacuum vapor deposition method), and it is preferable because the manufacturing apparatus can be shared.

[0274] Examples of the material of the n-type semiconductor of the active layer 183 include electron-accepting organic semiconductor materials such as fullerenes (for example, C 60 , C 70 etc.) or derivatives thereof. Also, examples of the material of the p-type semiconductor of the active layer 183 include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc) and tetraphenyldibenzoperiflanthene (DBP).

[0275] For example, the active layer 183 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor.

[0276] As materials that can be used for the gate, source, and drain of a transistor, as well as for conductive layers such as various wirings and electrodes constituting a display device, there are metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys mainly composed of such metals. Films containing these materials can be used as a single layer or in a laminated structure.

[0277] In addition, as a conductive material having translucency, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials can be used. Alternatively, nitrides of such metal materials (for example, titanium nitride) may be used. When using a metal material, an alloy material (or a nitride thereof), it is preferably made thin enough to have translucency. In addition, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers such as various wirings and electrodes constituting a display device, and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) of display elements.

[0278] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxynitride, silicon nitride, and aluminum oxide.

[0279] [Display device 100B] FIG. 12A shows a cross-sectional view of the display device 100B.

[0280] The display device 100B mainly differs from the display device 100A in that it has a lens 149 and a protective layer 195. Detailed description of the same configuration as that of the display device 100A will be omitted.

[0281] By providing the protective layer 195 that covers the light-receiving element 110 and the light-emitting element 190, it is possible to suppress impurities such as water from entering the light-receiving element 110 and the light-emitting element 190, and improve the reliability of the light-receiving element 110 and the light-emitting element 190.

[0282] In the region 228 near the end of the display device 100B, it is preferable that the insulating layer 215 and the protective layer 195 are in contact with each other through the opening of the insulating layer 214. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 195 are in contact with each other. Thereby, it is possible to suppress impurities from entering the display unit 162 from the outside through the organic insulating film. Therefore, the reliability of the display device 100B can be improved.

[0283] FIG. 12B shows an example in which the protective layer 195 has a three-layer structure. In FIG. 12B, the protective layer 195 includes an inorganic insulating layer 195a on the common electrode 115, an organic insulating layer 195b on the inorganic insulating layer 195a, and an inorganic insulating layer 195c on the organic insulating layer 195b.

[0284] The end of the inorganic insulating layer 195a and the end of the inorganic insulating layer 195c extend outside the end of the organic insulating layer 195b and are in contact with each other. And the inorganic insulating layer 195a is in contact with the insulating layer 215 (inorganic insulating layer) through the opening of the insulating layer 214 (organic insulating layer). Thereby, since the insulating layer 215 and the protective layer 195 can surround the light-receiving element 110 and the light-emitting element 190, the reliability of the light-receiving element 110 and the light-emitting element 190 can be improved.

[0285] Thus, the protective layer 195 may have a laminated structure of an organic insulating film and an inorganic insulating film. At this time, it is preferable that the end of the inorganic insulating film extends outside the end of the organic insulating film.

[0286] A lens 149 is provided on the surface of the substrate 152 on the side of the substrate 151. The lens 149 has a convex surface on the side of the substrate 151. The lens 149 is provided so as to overlap with the light-receiving area of the light-receiving element 110. Thereby, the sensitivity and accuracy of the sensor using the light-receiving element 110 can be enhanced.

[0287] Preferably, the lens 149 has a refractive index of 1.3 or more and 2.5 or less. The lens 149 can be formed using at least one of an inorganic material and an organic material. For example, a material containing a resin can be used for the lens 149. Further, a material containing at least one of an oxide and a sulfide can be used for the lens 149.

[0288] Specifically, a resin containing chlorine, bromine, or iodine, a resin containing heavy metal atoms, a resin containing an aromatic ring, a resin containing sulfur, etc. can be used for the lens 149. Alternatively, a material containing a resin and nanoparticles of a material having a higher refractive index than the resin can be used for the lens 149. Titanium oxide or zirconium oxide, etc. can be used for the nanoparticles.

[0289] Further, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, an oxide containing indium and tin, or an oxide containing indium, gallium, and zinc, etc. can be used for the lens 149. Alternatively, zinc sulfide, etc. can be used for the lens 149.

[0290] Further, in the display device 100B, the protective layer 195 and the substrate 152 are bonded together by an adhesive layer 142. The adhesive layer 142 is provided so as to overlap with the light-receiving element 110 and the light-emitting element 190, respectively, and a solid encapsulation structure is applied to the display device 100B.

[0291] [Display device 100C] FIG. 13A shows a cross-sectional view of the display device 100C.

[0292] The display device 100C has a transistor structure different from that of the display device 100B.

[0293] The display device 100C has transistors 208, 209, and 210 on a substrate 151.

[0294] The transistors 208, 209, and 210 have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer having a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 that covers the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel formation region 231i.

[0295] The conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0296] The pixel electrode 191B of the light-emitting element 190B is electrically connected to one of the pair of low-resistance regions 231n of the transistor 208 through the conductive layer 222b.

[0297] The pixel electrode 181 of the light-receiving element 110 is electrically connected to the other of the pair of low-resistance regions 231n of the transistor 209 through the conductive layer 222b.

[0298] In FIG. 13A, an example is shown in which the insulating layer 225 covers the upper surface and the side surfaces of the semiconductor layer. On the other hand, in FIG. 13B, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 and does not overlap with the low resistance region 231n. For example, the structure shown in FIG. 13B can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In FIG. 13B, an insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are respectively connected to the low resistance region 231n through the opening of the insulating layer 215. Further, an insulating layer 218 covering the transistor may be provided.

[0299] [Display device 100D] FIG. 14 shows a cross-sectional view of the display device 100D.

[0300] The display device 100D is different from the display device 100C in that it has a colored layer 148a.

[0301] The colored layer 148a has a portion in contact with the upper surface of the pixel electrode 181 included in the light receiving element 110 and a portion in contact with the side surface of the partition wall 216.

[0302] By absorbing the stray light generated within the display device 100D, the amount of stray light incident on the light receiving element 110 can be reduced. Thereby, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be enhanced.

[0303] Further, the display device 100D is different from the display device 100C in that it does not have the substrate 151 and the substrate 152, and has the substrate 153, the substrate 154, the adhesive layer 155, and the insulating layer 212.

[0304] The substrate 153 and the insulating layer 212 are bonded together by the adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by the adhesive layer 142.

[0305] The display device 100D is configured by transferring an insulating layer 212, transistors 208, 209, 210, a light receiving element 110, a light emitting element 190B, etc., formed on a production substrate, onto a substrate 153. The substrate 153 and the substrate 154 are each preferably flexible. Thereby, the flexibility of the display device 100D can be enhanced.

[0306] For the insulating layer 212, an inorganic insulating film that can be used for the insulating layer 211 and the insulating layer 215 can be used.

[0307] In addition, in the display device 100C, an example without the lens 149 is shown, and in the display device 100D, an example with the lens 149 is shown. The lens 149 can be appropriately provided according to the use of the sensor or the like.

[0308] [Metal oxide] Hereinafter, metal oxides applicable to the semiconductor layer will be described.

[0309] In this specification and the like, metal oxides containing nitrogen may also be collectively referred to as metal oxides. Also, metal oxides containing nitrogen may be referred to as metal oxynitrides. For example, metal oxides containing nitrogen such as zinc oxynitride (ZnON) may be used for the semiconductor layer.

[0310] In this specification and the like, there may be cases where CAAC (c-axis aligned crystal) and CAC (Cloud-Aligned Composite) are described. CAAC represents an example of a crystal structure, and CAC represents an example of the configuration of a function or a material.

[0311] For example, CAC (Cloud-Aligned Composite)-OS (Oxide Semiconductor) can be used for the semiconductor layer.

[0312] CAC-OS or CAC-metal oxide has a conductive function in part of the material and an insulating function in part of the material, and has a semiconductor function as a whole. When CAC-OS or CAC-metal oxide is used for the semiconductor layer of a transistor, the conductive function is the function of flowing electrons (or holes) serving as carriers, and the insulating function is the function of not flowing electrons serving as carriers. By causing the conductive function and the insulating function to act complementarily, respectively, a switching function (On / Off function) can be imparted to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, by separating the respective functions, both functions can be enhanced to the maximum extent.

[0313] Also, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. Also, in the material, the conductive region and the insulating region may be separated at the nanoparticle level. Also, the conductive region and the insulating region may be unevenly distributed in the material, respectively. Also, the conductive region may be observed to be blurred at the periphery and connected in a cloud shape.

[0314] Also, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region may be dispersed in the material with sizes of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less, respectively.

[0315] In addition, CAC-OS or CAC-metal oxide is composed of components having different band gaps. For example, CAC-OS or CAC-metal oxide is composed of a component having a wide band gap due to an insulating region and a component having a narrow band gap due to a conductive region. In such a configuration, when carriers flow, the carriers mainly flow in the component having the narrow band gap. Further, the component having the narrow band gap acts complementarily to the component having the wide band gap, and carriers also flow in the component having the wide band gap in conjunction with the component having the narrow band gap. Therefore, when the above CAC-OS or CAC-metal oxide is used for the channel formation region of a transistor, a high current driving force, that is, a large on-current, and a high field-effect mobility can be obtained in the on-state of the transistor.

[0316] That is, CAC-OS or CAC-metal oxide can also be referred to as a matrix composite or a metal matrix composite.

[0317] Oxide semiconductors (metal oxides) can be divided into single-crystalline oxide semiconductors and other non-single-crystalline oxide semiconductors. Examples of non-single-crystalline oxide semiconductors include CAAC-OS (c-axis aligned crystalline oxide semiconductor), polycrystalline oxide semiconductors, nc-OS (nanocrystalline oxide semiconductor), pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductor), and amorphous oxide semiconductors.

[0318] CAAC-OS has a c-axis orientation, and a plurality of nanocrystals are connected in the a-b plane direction, resulting in a crystal structure having strain. Note that the strain refers to a location where the orientation of the lattice arrangement changes between a region where the lattice arrangements are aligned and another region where the lattice arrangements are aligned in the region where the plurality of nanocrystals are connected.

[0319] The nanocrystals are based on a hexagon, but are not necessarily regular hexagons and may be non-regular hexagons. Also, in the case of strain, there may be lattice arrays such as pentagons and heptagons. In CAAC-OS, it is difficult to confirm a clear grain boundary (also referred to as a grain boundary) even in the vicinity of strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice array. This is because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal elements.

[0320] Also, CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium and oxygen (hereinafter, In layer) and a layer containing element M, zinc, and oxygen (hereinafter, (M,Zn) layer) are laminated. Note that indium and element M are mutually substitutable, and when element M in the (M,Zn) layer is substituted with indium, it can also be represented as an (In,M,Zn) layer. Also, when indium in the In layer is substituted with element M, it can also be represented as an (In,M) layer.

[0321] CAAC-OS is a highly crystalline metal oxide. On the other hand, since it is difficult to confirm a clear grain boundary in CAAC-OS, it can be said that a decrease in electron mobility due to grain boundaries is unlikely to occur. Also, since the crystallinity of metal oxides may decrease due to the incorporation of impurities or the generation of defects, CAAC-OS can also be said to be a metal oxide with few impurities and defects (such as oxygen vacancies (also referred to as V O :oxygen vacancy). Therefore, the physical properties of the metal oxide having CAAC-OS are stable. Therefore, the metal oxide having CAAC-OS is heat-resistant and highly reliable.

[0322] nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). Also, nc-OS does not show regularity in the crystal orientation among different nanocrystals. Therefore, no orientation is seen in the entire film. Thus, depending on the analysis method, nc-OS may not be distinguishable from a-like OS or an amorphous oxide semiconductor.

[0323] Note that indium-gallium-zinc oxide (hereinafter, IGZO), which is a kind of metal oxide having indium, gallium, and zinc, may take a stable structure by using the above-described nanocrystals. In particular, since IGZO tends to be difficult to grow crystals in the air, it may be structurally more stable as a smaller crystal (here, a crystal of several mm or a crystal of several cm) than a larger crystal (for example, the above-described nanocrystals).

[0324] a-like OS is a metal oxide having a structure between nc-OS and an amorphous oxide semiconductor. a-like OS has a loose or low-density region. That is, a-like OS has lower crystallinity than nc-OS and CAAC-OS.

[0325] Oxide semiconductors (metal oxides) have various structures and each has different characteristics. The oxide semiconductor according to one embodiment of the present invention may have two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, a-like OS, nc-OS, and CAAC-OS.

[0326] The metal oxide film functioning as a semiconductor layer can be formed using either one or both of an inert gas and an oxygen gas. Note that there is no particular limitation on the flow rate ratio (oxygen partial pressure) of oxygen during the formation of the metal oxide film. However, when obtaining a transistor having a high field-effect mobility, the flow rate ratio (oxygen partial pressure) of oxygen during the formation of the metal oxide film is preferably 0% or more and 30% or less, more preferably 5% or more and 30% or less, and further preferably 7% or more and 15% or less.

[0327] The metal oxide preferably has an energy gap of 2 eV or more, more preferably 2.5 eV or more, and even more preferably 3 eV or more. By using a metal oxide with a wide energy gap in this way, the off-current of the transistor can be reduced.

[0328] The substrate temperature during the formation of the metal oxide film is preferably 350°C or lower, more preferably room temperature or higher and 200°C or lower, and even more preferably room temperature or higher and 130°C or lower. When the substrate temperature during the formation of the metal oxide film is room temperature, productivity can be increased, which is preferable.

[0329] The metal oxide film can be formed by a sputtering method. In addition, for example, a PLD method, a PECVD method, a thermal CVD method, an ALD method, a vacuum evaporation method, etc. may also be used.

[0330] As described above, the display device of the present embodiment has a light-receiving element and a light-emitting element in the display unit, and the display unit has both a function of displaying an image and a function of detecting light. Thereby, compared with the case where a sensor is provided outside the display unit or outside the display device, miniaturization and weight reduction of the electronic device can be achieved. In addition, in combination with a sensor provided outside the display unit or outside the display device, a more multifunctional electronic device can also be realized.

[0331] At least one layer of the layers provided between a pair of electrodes of the light-receiving element can have the same configuration as that of the light-emitting element (EL element). For example, the light-receiving element can also have the same configuration as that of the light-emitting element (EL element) for all layers other than the active layer. That is, by simply adding a step of forming an active layer to the manufacturing process of the light-emitting element, the light-emitting element and the light-receiving element can be formed on the same substrate. In addition, the pixel electrode and the common electrode of the light-receiving element and the light-emitting element can be formed of the same material and in the same process, respectively. In addition, by manufacturing the circuit electrically connected to the light-receiving element and the circuit electrically connected to the light-emitting element with the same material and in the same process, the manufacturing process of the display device can be simplified. In this way, a display device with a built-in light-receiving element and high convenience can be manufactured without having a complicated process.

[0332] This embodiment can be appropriately combined with other embodiments. Also, in this specification, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be appropriately combined.

[0333] (Embodiment 2) In this embodiment, a display device according to an aspect of the present invention will be described with reference to FIG. 15.

[0334] A display device according to an aspect of the present invention includes a first pixel circuit having a light receiving element and a second pixel circuit having a light emitting element. The first pixel circuit and the second pixel circuit are each arranged in a matrix.

[0335] FIG. 15A shows an example of the first pixel circuit having a light receiving element, and FIG. 15B shows an example of the second pixel circuit having a light emitting element.

[0336] The pixel circuit PIX1 shown in FIG. 15A includes a light receiving element PD, transistors M1, M2, M3, M4, and a capacitor element C1. Here, an example using a photodiode as the light receiving element PD is shown.

[0337] The cathode of the light receiving element PD is electrically connected to the wiring V1, and the anode is electrically connected to one of the source or drain of the transistor M1. The gate of the transistor M1 is electrically connected to the wiring TX, and the other of the source or drain is electrically connected to one electrode of the capacitor element C1, one of the source or drain of the transistor M2, and the gate of the transistor M3. The gate of the transistor M2 is electrically connected to the wiring RES, and the other of the source or drain is electrically connected to the wiring V2. One of the source or drain of the transistor M3 is electrically connected to the wiring V3, and the other of the source or drain is electrically connected to one of the source or drain of the transistor M4. The gate of the transistor M4 is electrically connected to the wiring SE, and the other of the source or drain is electrically connected to the wiring OUT1.

[0338] A fixed potential is supplied to each of wiring V1, wiring V2, and wiring V3. When driving the light receiving element PD in reverse bias, a potential lower than the potential of wiring V1 is supplied to wiring V2. The transistor M2 is controlled by a signal supplied to wiring RES and has a function of resetting the potential of the node connected to the gate of the transistor M3 to the potential supplied to wiring V2. The transistor M1 is controlled by a signal supplied to wiring TX and has a function of controlling the timing at which the potential of the above node changes according to the current flowing through the light receiving element PD. The transistor M3 functions as an amplification transistor that outputs according to the potential of the above node. The transistor M4 is controlled by a signal supplied to wiring SE and functions as a selection transistor for reading an output according to the potential of the above node to an external circuit connected to wiring OUT1.

[0339] The pixel circuit PIX2 shown in FIG. 15B includes a light emitting element EL, a transistor M5, a transistor M6, a transistor M7, and a capacitor element C2. Here, an example using a light emitting diode as the light emitting element EL is shown. In particular, it is preferable to use an organic EL element as the light emitting element EL.

[0340] The gate of the transistor M5 is electrically connected to wiring VG, one of the source or drain is electrically connected to wiring VS, and the other of the source or drain is electrically connected to one electrode of the capacitor element C2 and the gate of the transistor M6. One of the source or drain of the transistor M6 is electrically connected to wiring V4, and the other is electrically connected to the anode of the light emitting element EL and one of the source or drain of the transistor M7. The gate of the transistor M7 is electrically connected to wiring MS, and the other of the source or drain is electrically connected to wiring OUT2. The cathode of the light emitting element EL is electrically connected to wiring V5.

[0341] A constant potential is supplied to wiring V4 and wiring V5, respectively. The anode side of the light-emitting element EL can be set to a high potential, and the cathode side can be set to a potential lower than that of the anode side. The transistor M5 is controlled by a signal supplied to wiring VG and functions as a selection transistor for controlling the selection state of the pixel circuit PIX2. Further, the transistor M6 functions as a drive transistor that controls the current flowing through the light-emitting element EL according to the potential supplied to the gate. When the transistor M5 is in the conductive state, the potential supplied to wiring VS is supplied to the gate of the transistor M6, and the emission luminance of the light-emitting element EL can be controlled according to the potential. The transistor M7 is controlled by a signal supplied to wiring MS and has a function of outputting the potential between the transistor M6 and the light-emitting element EL to the outside via wiring OUT2.

[0342] The wiring V1 to which the cathode of the light-receiving element PD is electrically connected and the wiring V5 to which the cathode of the light-emitting element EL is electrically connected can be set to the same layer and the same potential.

[0343] In the display device of the present embodiment, an image may be displayed by causing the light-emitting element to emit light in a pulsed manner. By shortening the driving time of the light-emitting element, it is possible to reduce the power consumption of the display device and suppress heat generation. In particular, an organic EL element is suitable because of its excellent frequency characteristics. The frequency can be, for example, 1 kHz or more and 100 MHz or less.

[0344] Here, it is preferable to apply transistors using a metal oxide (oxide semiconductor) to the semiconductor layers in which channels are formed in the transistors M1, M2, M3, and M4 included in the pixel circuit PIX1, and the transistors M5, M6, and M7 included in the pixel circuit PIX2, respectively.

[0345] Transistors using metal oxides with a wider bandgap and lower carrier density than silicon can achieve an extremely small off-current. Therefore, due to this small off-current, it is possible to hold the charge accumulated in the capacitive element connected in series with the transistor for a long period of time. Therefore, in particular, for transistors M1, M2, and M5 connected in series to capacitive element C1 or capacitive element C2, it is preferable to use transistors with an oxide semiconductor applied. Also, by using transistors with an oxide semiconductor applied for other transistors as well, the manufacturing cost can be reduced.

[0346] In addition, for transistors M1 to M7, transistors using silicon for the semiconductor in which the channel is formed can also be used. In particular, by using highly crystalline silicon such as single-crystalline silicon or polycrystalline silicon, high field-effect mobility can be achieved, enabling faster operation, which is preferable.

[0347] Also, among transistors M1 to M7, a configuration may be adopted in which transistors with an oxide semiconductor applied are used for one or more of them, and transistors with silicon applied are used for the rest.

[0348] In FIGS. 15A and 15B, the transistors are shown as n-channel type transistors, but p-channel type transistors can also be used.

[0349] The transistors included in pixel circuit PIX1 and the transistors included in pixel circuit PIX2 are preferably formed side by side on the same substrate. In particular, it is preferable to adopt a configuration in which the transistors included in pixel circuit PIX1 and the transistors included in pixel circuit PIX2 are mixed and periodically arranged within one region.

[0350] Further, it is preferable to provide one or more layers having one or both of a transistor and a capacitor element at a position overlapping with the light receiving element PD or the light emitting element EL. This can reduce the effective occupation area of each pixel circuit and realize a high-definition display section.

[0351] This embodiment can be appropriately combined with other embodiments.

[0352] (Embodiment 3) In this embodiment, a driving method of a display device according to an aspect of the present invention will be described with reference to FIGS. 16 and 17.

[0353] In this embodiment, a case where a display device according to an aspect of the present invention functions as a touch panel will be described.

[0354] Since high resolution is required for fingerprint imaging, it is preferable that the imaging data acquired using the light receiving element is read out individually (one pixel at a time) for all pixels. On the other hand, when functioning as a touch panel, high resolution is not required compared to fingerprint authentication, but a high-speed read operation is required.

[0355] For example, by collectively performing touch detection on a plurality of pixels, the driving frequency can be increased. For example, the pixels to be read out simultaneously can be appropriately determined as 4 pixels (2×2 pixels), 9 pixels (3×3 pixels), or 16 pixels (4×4 pixels), etc.

[0356] FIG. 16A shows an example of collectively reading out the imaging data of the light receiving elements PD included in a plurality of pixels.

[0357] One pixel 300 has a light-receiving element PD, a sub-pixel R presenting red light, a sub-pixel G presenting green light, and a sub-pixel B presenting blue light. In FIG. 16A, an example is shown in which the unit 310 has nine pixels 300 (3×3 pixels), but the number of pixels included in the unit 310 is not particularly limited. The pixels 300 included in the same unit 310 have their imaging data read out simultaneously. For example, first, the imaging data of the unit 310a is read out, and then the imaging data of the unit 310b is read out. Thereby, compared with the case of reading out the imaging data individually for each pixel, the number of readouts can be reduced, and the driving frequency can be increased. Also, since the imaging data of the unit 310a is data obtained by adding up the imaging data of a plurality of pixels 300 (here, nine pixels 300), the sensitivity can be increased compared with the case of imaging one pixel at a time.

[0358] Alternatively, touch detection may be performed using only some of the pixels. For example, the pixels used for touch detection can be appropriately determined as one pixel per four pixels (2×2 pixels), one pixel per 100 pixels (10×10 pixels), or one pixel per 900 pixels (30×30 pixels), etc.

[0359] FIG. 16B shows an example of performing touch detection using only some of the pixels.

[0360] One pixel 300 has a light-receiving element PD, a sub-pixel R presenting red light, a sub-pixel G presenting green light, and a sub-pixel B presenting blue light. The target pixel 320 to be read out is only the pixel 300 surrounded by the dashed-dotted line. In FIG. 16B, an example is shown in which the target pixel 320 used for touch detection is one pixel per nine pixels (3×3 pixels), but the number of target pixels 320 is not particularly limited. First, the imaging data of the target pixel 320a is read out, and then the imaging data of the target pixel 320b is read out. Imaging data is not read out from the pixel 300 between the target pixel 320a and the target pixel 320b. Thereby, compared with the case of reading out the imaging data of all pixels one by one, the number of readouts can be reduced, and the driving frequency can be increased.

[0361] Note that a plurality of pixels 300 may be alternately used as the target pixel 320. For example, when using one pixel as the target pixel 320 for every nine pixels, the target pixel 320 shifts by one row or one column at a time, and three pixels may be alternately used as the target pixel 320. Also, all nine pixels may be alternately used as the target pixel 320.

[0362] The display device according to one aspect of the present invention preferably has two or more operation modes of the light receiving element, and these operation modes are mutually switchable. For example, for all pixels, it is preferable that a mode of individually reading out each pixel one by one and a mode of collectively reading out a plurality of pixels are switchable. Alternatively, it is preferable that a mode of reading out all pixels and a mode of reading out only some pixels are switchable. Thereby, at the time of fingerprint imaging, imaging can be performed with high resolution, and at the time of image display, touch detection can be performed with a high driving frequency.

[0363] Also, when performing touch detection, it is preferable to remove the influence of ambient light that becomes noise.

[0364] For example, in some pixels, by periodically repeating the lighting and extinguishing of the light emitting element and obtaining the difference in the detection intensity of the light receiving element between the lighting time and the extinguishing (non-lighting) time, the influence of ambient light can be removed. Note that it is preferable to provide a plurality of pixels that repeat lighting and extinguishing within a range that does not affect the video displayed on the display device. Also, it is preferable to repeat the lighting and extinguishing of the light emitting element every frame, such as the pixels that are lit and the pixels that are extinguished being swapped between odd frames and even frames. Note that the emission color during lighting is not particularly limited.

[0365] In FIG. 17A, pixels 330a and 330d are extinguished, and pixels 330b and 330c are lit. In FIG. 17B, pixels 330a and 330d are lit, and pixels 330b and 330c are extinguished.

[0366] Pixel 330b detects ambient light, so the detection intensity of the light-receiving element does not change between when the light source is on and when it is off. On the other hand, pixel 330d detects reflected light from finger 340, so the detection intensity of the light-receiving element changes between when the light-emitting element is on and when it is off. By using the difference in detection intensity between when it is on and when it is off, the influence of ambient light can be removed.

[0367] As described above, the display device according to the present embodiment can be driven in either a mode of performing imaging for each unit or a mode of performing imaging for each light-receiving element. For example, when high-speed operation is required, the mode of performing imaging for each unit can be used. Also, when high-resolution imaging is required, the mode of performing imaging one pixel at a time (one light-receiving element at a time) can be used. By changing the drive mode according to the application, the functionality of the display device can be enhanced.

[0368] The present embodiment can be appropriately combined with other embodiments.

[0369] (Embodiment 4) In the present embodiment, an electronic device according to an aspect of the present invention will be described with reference to FIGS. 18 to 20.

[0370] The electronic device according to the present embodiment includes a display device according to an aspect of the present invention. For example, the display device according to an aspect of the present invention can be applied to the display unit of the electronic device. Since the display device according to an aspect of the present invention has a function of detecting light, biometric authentication can be performed on the display unit, or contact or proximity can be detected. Thereby, the functionality and convenience of the electronic device can be enhanced.

[0371] Examples of the electronic device include relatively large-screen electronic devices such as television sets, desktop or notebook personal computers, monitors for computers, digital signage, and large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, portable information terminals, and audio playback devices.

[0372] The electronic device according to this embodiment may have a sensor (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0373] The electronic device according to this embodiment can have various functions. For example, it can have functions such as displaying various information (such as still images, moving images, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, or time, a function of executing various software (programs), a wireless communication function, a function of reading programs or data recorded on a recording medium, etc.

[0374] The electronic device 6500 shown in FIG. 18A is a portable information terminal that can be used as a smartphone.

[0375] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, etc. The display unit 6502 has a touch panel function.

[0376] The display device according to one aspect of the present invention can be applied to the display unit 6502.

[0377] FIG. 18B is a schematic cross-sectional view including an end portion on the microphone 6506 side of the housing 6501.

[0378] A protective member 6510 having translucency is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in a space surrounded by the housing 6501 and the protective member 6510.

[0379] In the protection member 6510, a display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed by an adhesive layer (not shown).

[0380] In a region outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0381] A flexible display according to an aspect of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Further, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted while suppressing the thickness of the electronic device. Further, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow bezel can be realized.

[0382] FIG. 19A shows an example of a television device. In the television device 7100, a display unit 7000 is incorporated in a housing 7101. Here, a configuration in which the housing 7101 is supported by a stand 7103 is shown.

[0383] A display device according to an aspect of the present invention can be applied to the display unit 7000.

[0384] The operation of the television device 7100 shown in FIG. 19A can be performed by an operation switch provided in the housing 7101 or a separate remote control operation unit 7111. Alternatively, the display unit 7000 may be provided with a touch sensor, and the television device 7100 may be operated by touching the display unit 7000 with a finger or the like. The remote control operation unit 7111 may have a display unit that displays information output from the remote control operation unit 7111. Channel and volume operations can be performed by operation keys or a touch panel provided in the remote control operation unit 7111, and the video displayed on the display unit 7000 can be operated.

[0385] Note that the television device 7100 is configured to include a receiver, a modem, etc. The receiver can receive general television broadcasts. Also, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0386] FIG. 19B shows an example of a notebook personal computer. The notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated in the housing 7211.

[0387] The display device according to one aspect of the present invention can be applied to the display unit 7000.

[0388] FIGS. 19C and 19D show an example of digital signage.

[0389] The digital signage 7300 shown in FIG. 19C has a housing 7301, a display unit 7000, a speaker 7303, etc. Furthermore, it can have an LED lamp, operation keys (including a power switch or an operation switch), connection terminals, various sensors, a microphone, etc.

[0390] FIG. 19D shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0391] In FIGS. 19C and 19D, the display device according to one aspect of the present invention can be applied to the display unit 7000.

[0392] The larger the display unit 7000, the more information can be provided at once. Also, the larger the display unit 7000, the easier it is to catch people's eyes, and for example, the advertising effect can be enhanced.

[0393] By applying a touch panel to the display unit 7000, not only can an image or video be displayed on the display unit 7000, but also the user can intuitively operate it, which is preferable. Also, when used for applications such as providing route information or traffic information, the usability can be improved by intuitive operations.

[0394] Also, as shown in FIGS. 19C and 19D, it is preferable that the digital signage 7300 or the digital signage 7400 can be linked by wireless communication with an information terminal 7311 such as a smartphone or an information terminal 7411 held by the user. For example, the information of the advertisement displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Also, by operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0395] Also, a game can be executed on the digital signage 7300 or the digital signage 7400 with the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller). Thereby, an unspecified number of users can participate in the game and enjoy it at the same time.

[0396] The electronic device shown in FIGS. 20A to 20F includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, a sensor 9007 (having a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor or infrared rays), a microphone 9008, etc.

[0397] The electronic devices shown in FIGS. 20A to 20F have various functions. For example, it can have functions such as displaying various information (still images, moving images, text images, etc.) on the display unit, touch panel function, displaying a calendar, date, or time, controlling processing by various software (programs), wireless communication function, reading and processing programs or data recorded on a recording medium, etc. Note that the functions of the electronic device are not limited to these, and it can have various functions. The electronic device may have a plurality of display units. Also, the electronic device may be provided with a camera or the like to capture still images and moving images and store them in a recording medium (external or built into the camera), and have a function of displaying the captured images on the display unit, etc.

[0398] Details of the electronic devices shown in FIGS. 20A to 20F will be described below.

[0399] FIG. 20A is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 can be used as, for example, a smartphone. Note that the portable information terminal 9101 may be provided with a speaker 9003, connection terminals 9006, a sensor 9007, etc. Also, the portable information terminal 9101 can display character and image information on its plurality of surfaces. FIG. 20A shows an example in which three icons 9050 are displayed. Also, information 9051 indicated by a dashed rectangle can be displayed on other surfaces of the display unit 9001. Examples of the information 9051 include notifications of incoming calls such as e-mails, SNS, and phone calls, titles, sender names, dates, times, remaining battery levels, antenna reception strengths, etc. of e-mails and SNS. Or, icons 9050 or the like may be displayed at the position where the information 9051 is displayed.

[0400] FIG. 20B is a perspective view showing the portable information terminal 9102. The portable information terminal 9102 has a function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, the user can also check the information 9053 displayed at a position where it can be observed from above the portable information terminal 9102 while the portable information terminal 9102 is stored in the breast pocket of the clothing. The user can check the display without taking the portable information terminal 9102 out of the pocket and can determine, for example, whether to answer a call.

[0401] FIG. 20C is a perspective view showing the wristwatch-type portable information terminal 9200. The portable information terminal 9200 can be used, for example, as a smartwatch. Further, the display surface of the display unit 9001 is provided to be curved, and the display can be performed along the curved display surface. Further, the portable information terminal 9200 can also make a hands-free call by mutually communicating with, for example, a wirelessly communicable headset. Further, the portable information terminal 9200 can also perform data transmission and charging mutually with other information terminals through the connection terminal 9006. Note that the charging operation may be performed by wireless power supply.

[0402] FIGS. 20D to 20F are perspective views showing the foldable portable information terminal 9201. FIG. 20D shows the state in which the portable information terminal 9201 is unfolded, FIG. 20F shows the state in which it is folded, and FIG. 20E is a perspective view of the state in the middle of changing from one of FIG. 20D and FIG. 20F to the other. The portable information terminal 9201 has excellent portability in the folded state and excellent display listability due to a seamless wide display area in the unfolded state. The display unit 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0403] This embodiment can be appropriately combined with other embodiments.

Example

[0404] In this example, a light-emitting and light-receiving element that can be used in a display device according to one aspect of the present invention was fabricated, and the results of the evaluation will be described. Hereinafter, an element that functions as both a light-emitting element and a light-receiving element will be referred to as a light-emitting and light-receiving element.

[0405] In this example, two light-emitting and light-receiving elements (Device 1 and Device 2) were fabricated. The light-emitting and light-receiving element fabricated in this example has a configuration in which the structure is made common with a light-emitting element (organic EL element).

[0406] The chemical formulas of the materials used in this example are shown below.

[0407] [Chemical Formula]

[0408] The specific configuration of the light-emitting and light-receiving element of this example is shown in Table 1. For Device 1, a stacked structure of a light-emitting element 47R that emits red (R) light shown in FIG. 7A and a light-receiving element 46 was applied. Device 1 has a stacked structure that can be fabricated by replacing the hole transport layer of the light-emitting element with the active layer of the light-receiving element. Also, for Device 2, a stacked structure of a light-emitting element 47R that emits red (R) light shown in FIG. 7B and a light-receiving element 46 was applied. Device 2 has a stacked structure that can be fabricated by further adding the active layer of the light-receiving element to the light-emitting element.

[0409] [Table 1]

[0410] The first electrode was formed by depositing an alloy of silver (Ag), palladium (Pd), and copper (Cu) (Ag-Pd-Cu (APC)) to a film thickness of 100 nm by sputtering and depositing indium tin oxide (ITSO) containing silicon oxide to a film thickness of 100 nm by sputtering.

[0411] The hole injection layer was formed by co-evaporating 3-[4-(9-phenanthryl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPPn) and molybdenum oxide such that the weight ratio was PCPPn:molybdenum oxide = 2:1. The film thickness of the hole injection layer was formed to be 15 nm.

[0412] The active layer was formed by co-evaporating fullerene (C 70 ) and tetraphenyldibenzoperiflanthene (abbreviation: DBP) such that the weight ratio was C 70 :DBP = 9:1. The film thickness of the active layer was formed to be 60 nm.

[0413] The hole transport layer was not provided in Device 1 and was provided in Device 2. The hole transport layer was formed by vapor deposition using N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF) such that the film thickness was 70 nm.

[0414] The light-emitting layer was formed by co-evaporating 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenz[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), PCBBiF, and bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]phenyl-κC}(2,6-dimethyl-3,5-heptanedionato-κ2O,O')iridium(III) (abbreviation: [Ir(dmdppr-P)2(dibm)]) such that the weight ratio was 0.8:0.2:0.06 (= 2mDBTBPDBq-II:PCBBiF:[Ir(dmdppr-P)2(dibm)]) and the film thickness was 70 nm.

[0415] The electron transport layer was formed by sequentially vapor depositing such that the film thickness of 2mDBTBPDBq-II was 10 nm and the film thickness of 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) was 10 nm.

[0416] The electron injection layer was formed by vapor deposition using lithium fluoride (LiF) to a film thickness of 1 nm.

[0417] The second electrode was formed by co-vapor deposition with a volume ratio of silver (Ag) to magnesium (Mg) of 10:1 to a film thickness of 10 nm, and then indium tin oxide (ITO) was formed by sputtering to a thickness of 40 nm.

[0418] Thus, the light-emitting and light-receiving element of this example was fabricated.

[0419] [Characteristics as a light-emitting element] First, the characteristics of the light-emitting and light-receiving element as a light-emitting element (characteristics when a forward bias is applied) were evaluated. Fig. 21 shows the voltage-luminance characteristics of the light-emitting and light-receiving element. Fig. 22 shows the luminance-external quantum efficiency characteristics of the light-emitting and light-receiving element.

[0420] Both Device 1 and Device 2 were confirmed to operate normally as a light-emitting element. In particular, Device 2 provided with a hole transport layer between the active layer and the light-emitting layer achieved a high external quantum efficiency.

[0421] [Characteristics as a light-receiving element] Next, the characteristics of the light-emitting and light-receiving element as a light-receiving element (characteristics when a reverse bias is applied) were evaluated. Fig. 23 shows the wavelength dependence of the light-receiving sensitivity of the light-emitting and light-receiving element. As measurement conditions, the voltage was set to -6 V and the light was irradiated at 10 μW / cm 2 Here, the applied voltage is usually the value when the bias applied to the EL device is positive. That is, the case where the first electrode side is at a high potential and the second electrode side is at a low potential is positive.

[0422] Both Device 1 and Device 2 were confirmed to operate normally as a light-receiving element.

[0423] As described above, in this example, a light-emitting and light-receiving element having a configuration in which the structure is made common with a light-emitting element (organic EL element) was fabricated, and good characteristics were obtained for both the light-emitting element and the light-receiving element.

[0424] According to this embodiment, it has been found that device 1 and device 2 can each operate as a light-emitting element and can also operate as a light-receiving element. Therefore, it has been found that the configurations of device 1 or device 2 can be commonly used for the light-emitting element 47R and the light-receiving element 46.

Description of Reference Numerals

[0425] C1: Capacitance element, C2: Capacitance element, IR: Light-emitting element, M1: Transistor, M2: Transistor, M3: Transistor, M4: Transistor, M5: Transistor, M6: Transistor, M7: Transistor, OUT1: Wiring, OUT2: Wiring, PD: Light-receiving element, PIX1: Pixel circuit, PIX2: Pixel circuit, V1: Wiring, V2: Wiring, V3: Wiring, V4: Wiring, V5: Wiring, 10A: Display device, 10B: Display device, 10C: Display device, 10D: Display device, 10E: Display device, 10F: Display device, 21B: Light, 21G: Light, 21R: Light, 22: Light, 23a: Light, 23b: Reflected light, 41: Transistor, 42: Transistor, 46: Light-receiving element, 47: Light-emitting element, 47B: Light-emitting element, 47G: Light-emitting element, 47R: Light-emitting element, 50A: Display device, 50B: Display device, 51: Substrate, 52: Finger, 53: Layer having a light-receiving element, 55: Layer having a transistor, 57: Layer having a light-emitting element, 59: Substrate, 100A: Display device, 100B: Display device, 100C: Display device, 100D: Display device, 110: Light-receiving element, 112: Common layer, 114: Common layer, 115: Common electrode, 142: Adhesive layer, 143: Space, 148a: Colored layer, 149: Lens, 151: Substrate, 152: Substrate, 153: Substrate, 154: Substrate, 155: Adhesive layer, 162: Display portion, 164: Circuit, 165: Wiring, 166: Conductive layer, 172: FPC, 173: IC, 181: Pixel electrode, 182: Buffer layer, 183: Active layer, 184: Buffer layer, 190: Light-emitting element, 190B: Light-emitting element, 190G: Light-emitting element, 190R: Light-emitting element, 191: Pixel electrode, 191B: Pixel electrode, 191G: Pixel electrode, 191R: Pixel electrode, 192: Buffer layer, 192B: Buffer layer, 192G: Buffer layer, 192R: Buffer layer, 193: Light-emitting layer, 193B: Light-emitting layer, 193G: Light-emitting layer, 193R: Light-emitting layer, 193Y: Light-emitting layer, 194: Buffer layer, 194B: Buffer layer, 194G: Buffer layer, 194R: Buffer layer, 195: Protection layer, 195a: Inorganic insulating layer, 195b: Organic insulating layer, 195c: Inorganic insulating layer, 201: Transistor, 204: Connection portion, 205: Transistor, 206: Transistor, 207: Transistor, 208: Transistor, 209: Transistor, 210: Transistor, 211: Insulating layer, 212: Insulating layer, 213: Insulating layer, 214: Insulating layer, 215: Insulating layer, 216: Partition wall, 217: Partition wall,218: Insulating layer, 221: Conductive layer, 222a: Conductive layer, 222b: Conductive layer, 223: Conductive layer, 225: Insulating layer, 228: Region, 231: Semiconductor layer, 300: Pixel, 310: Unit, 310a: Unit, 310b: Unit, 320: Target pixel, 320a: Target pixel, 320b: Target pixel, 330a: Pixel, 330b: Pixel, 330c: Pixel, 330d: Pixel, 340 Finger, 231i: Channel formation region, 231n: Low-resistance region, 242: Connection layer, 6500: Electronic device, 6501: Housing, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protection member, 6511: Display panel, 6512: Optical member, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television device, 7101: Housing, 7103: Stand, 7111: Remote control operation unit, 7200: Notebook personal computer, 7211: Housing, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal device, 7400: Digital signage, 7401: Column, 7411: Information terminal device, 9000: Housing, 9001: Display unit, 9003: Speaker, 9005: Operation key, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

1. having a display unit, wherein the display unit has a light-receiving element and a light-emitting element, the light-receiving element having a first pixel electrode, an active layer positioned on the first pixel electrode, and a common electrode positioned on the active layer, the light-emitting element having a second pixel electrode, a light-emitting layer positioned on the second pixel electrode, and the common electrode positioned on the light-emitting layer, the active layer having a region overlapping with the second pixel electrode above the light-emitting layer, the light-emitting layer having a region overlapping with the first pixel electrode below the active layer, the light-emitting layer having a light-emitting material that emits light of a first color, the active layer having an organic compound that absorbs light with a shorter wavelength than the light of the first color, the light of the first color being extracted to the outside through the active layer and the common electrode, the light-receiving element having a function of detecting light that is incident from the outside through the common electrode and has a wavelength absorbed by the organic compound, a display device.

2. In Claim 1, the light-emitting layer having a light-emitting material that emits red light as the first color, a display device.

3. In Claim 1 or 2, the light-emitting layer having a light-emitting material that emits green light as the first color, a display device.

4. In any one of Claims 1 to 3, the first pixel electrode having a laminated structure of a first reflective electrode and a first transparent electrode on the first reflective electrode, the second pixel electrode having a laminated structure of a second reflective electrode and a second transparent electrode on the second reflective electrode, the film thickness of the first transparent electrode and the film thickness of the second transparent electrode being different from each other, a display device.

Images