Light emitting display device

Abstract

To provide a light emitting display device that can reduce power consumption.SOLUTION: There is provided a light emitting display device 10 which includes: a substrate 101 where a display region, in which first subpixels SPb, second subpixels SPr, and third subpixels SPg of different colors are arranged, is defined; a first electrode 150 disposed in each of the first, second, and third subpixels; a partition wall OH of an overhang structure which extends along a boundary between the first subpixel and the second and third subpixels, and includes a protrusion portion protruding outward; a connection electrode COE disposed under the protrusion portion of the partition wall OH at the boundary of the first subpixel SPb; a first light emitting stack ST1 and a second light emitting stack ST2 separated by the partition wall OH and stacked on the first electrode 150 of each subpixel; a charge generation layer between the first and second light emitting stacks; a second electrode 169 on the second light emitting stack ST2; and an intermediate electrode IE which is disposed in the first subpixel SPb, is located between the charge generation layer and the second light emitting stack ST2 in the first subpixel SPb, and is connected to the connection electrode COE.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] This specification relates to a light-emitting display device.

Background Art

[0002] In recent years, flat panel display devices having excellent characteristics such as thinning, weight reduction, and low power consumption have been developed and adopted in various fields.

[0003] Among flat panel display devices, a light-emitting display device including a light-emitting element such as a light-emitting diode is an element that emits light when charges are injected into a light-emitting layer formed between an anode and a cathode, and then electrons and holes pair up and disappear.

[0004] In recent years, the light-emitting element of a light-emitting display device has a tandem structure. In the tandem structure, a plurality of light-emitting stacks laminated in the vertical direction emit light simultaneously, resulting in white light emission.

[0005] In this case, since all the light-emitting stacks provided inside the sub-pixel perform a light-emitting operation, there is a problem that power consumption increases.

Summary of the Invention

Problems to be Solved by the Invention

[0006] This specification aims to provide a light-emitting display device capable of reducing power consumption in a light-emitting element having a tandem structure.

Means for Solving the Problems

[0007] To solve the above-described problems, one embodiment provides a light-emitting display device including a substrate defining a display area in which first, second, and third sub-pixels of different colors are arranged; first electrodes disposed on each of the first, second, and third sub-pixels; a partition wall of an overhang structure extending along a boundary between the first sub-pixel and the second and third sub-pixels and having a convex portion protruding outward; a connection electrode disposed under the convex portion of the partition wall at the boundary of the first sub-pixel; first and second light-emitting stacks separated by the partition wall and laminated on the first electrode of the first sub-pixel and the first electrodes of the second and third sub-pixels; a charge generation layer between the first and second light-emitting stacks; a second electrode on the second light-emitting stack; and an intermediate electrode separated by the partition wall, disposed in the first sub-pixel, positioned between the charge generation layer of the first sub-pixel and the second light-emitting stack, and connected to the connection electrode.

[0008] The light-emitting display device may further include a color filter layer disposed on the second electrode, the color filter layer including first and second color filter patterns corresponding to and generating colors of the second and third sub-pixels, respectively, and a transparent pattern corresponding to the first sub-pixel.

[0009] The light-emitting display device may further include a bank disposed along a boundary of each of the first, second, and third sub-pixels, the partition wall and the connection electrode being positioned on the bank at the boundary of the first sub-pixel, the first light-emitting stack of the first sub-pixel being exposed while covering an end portion of the connection electrode, and the intermediate electrode extending outside the first light-emitting stack and being capable of contacting the exposed connection electrode.

[0010] The first sub-pixel is provided with a thin-film transistor connected to the connection electrode, and each of the second sub-pixel and the third sub-pixel is provided with a thin-film transistor connected to the first electrode. In the first sub-pixel, the first light-emitting stack is in a light-off state, and the second light-emitting stack emits light. In each of the second sub-pixel and the third sub-pixel, the first light-emitting stack and the second light-emitting stack can emit light together.

[0011] The second electrodes of the first sub-pixel, and the second electrodes of the second sub-pixel and the third sub-pixel extend along the partition wall and are connected to a voltage wiring disposed in a non-display area outside the display area, and can receive an application of a low-potential drive voltage.

[0012] It can further include a dummy intermediate electrode separated from the intermediate electrode by the partition wall, disposed in the second sub-pixel and the third sub-pixel, and located between the charge generation layer and the second light-emitting stack in the second sub-pixel and the third sub-pixel.

[0013] The second light-emitting stack includes a second-1 light-emitting stack and a second-2 light-emitting stack on the second-1 light-emitting stack. The first sub-pixel, the second sub-pixel, and the third sub-pixel can be blue, red, and green sub-pixels, respectively.

[0014] The first sub-pixel, the second sub-pixel, and the third sub-pixel can be blue, red, and green sub-pixels, respectively.

[0015] The partition wall is formed to extend in the column direction along the boundaries on both sides of the first sub-pixel, and the partition wall does not have to be formed along the boundary between the second sub-pixel and the third sub-pixel.

[0016] The intermediate electrode can be continuously formed along the first sub-pixels arranged in the same column line.

[0017] On the other hand, the present invention provides a light-emitting display device including a substrate on which a display area where a plurality of sub-pixels are arranged is defined, a first electrode disposed for each of the sub-pixels, a partition wall including first to third partition walls having an overhang structure each having a first to third convex portion disposed along the boundary of the sub-pixels, stacked upward, and protruding outward, a first connection electrode disposed under the first convex portion of the first partition wall, a second connection electrode disposed on the upper surface of the first convex portion, a third connection electrode disposed on the upper surface of the second convex portion, first, second, and third light-emitting stacks separated for each of the sub-pixels by the partition wall, stacked on the first electrode, and emitting different colors, a second electrode on the third light-emitting stack, a first charge generation layer between the first light-emitting stack and the second light-emitting stack, a second charge generation layer between the second light-emitting stack and the third light-emitting stack, a first intermediate electrode between the first charge generation layer and the second light-emitting stack, and a second intermediate electrode between the second charge generation layer and the third light-emitting stack, wherein the first intermediate electrode, the second intermediate electrode, and the second electrode are each connected to the first connection electrode, the second connection electrode, and the third connection electrode, respectively.

[0018] The light-emitting display device further includes a bank disposed along the boundary of the sub-pixels, wherein the partition wall and the first connection electrode are located on the bank, the first light-emitting stack exposes while covering an end portion of the first connection electrode, the first intermediate electrode extends outside the first light-emitting stack and can contact the exposed first connection electrode.

[0019] The second light-emitting stack exposes while covering an end portion of the second connection electrode, the second intermediate electrode extends outside the second light-emitting stack and can contact the exposed second connection electrode.

[0020] The third light-emitting stack exposes while covering an end portion of the third connection electrode, the second electrode extends outside the third light-emitting stack and can contact the exposed third connection electrode.

[0021] The height of the upper surface of the second light-emitting stack or the second charge generation layer is equal to or greater than the height of the upper surface of the first partition wall, and the height of the upper surface of the third light-emitting stack is equal to or greater than the height of the upper surface of the second partition wall. Each of the heights may be the height on the substrate.

[0022] The sub-pixel may include a first thin-film transistor to a fourth thin-film transistor respectively connected to the first electrode and the first connection electrode to the third connection electrode.

[0023] The first light-emitting stack to the third light-emitting stack can emit light individually or two or more of them can emit light together.

[0024] The first light-emitting stack to the third light-emitting stack may be different light-emitting stacks among red, green, and blue light-emitting stacks.

[0025] The second protruding portion may extend and protrude further outward than the first protruding portion, and the third protruding portion may extend and protrude further outward than the second protruding portion.

Advantages of the Invention

[0026] In this specification, when using a tandem-structured light-emitting diode, a first light-emitting stack and a second light-emitting stack that constitute the light-emitting diode and emit blue and yellow light, and an intermediate electrode disposed therebetween are separated by partition walls of an overhang structure disposed along the boundaries on both sides of the B sub-pixel. The intermediate electrode of the B sub-pixel can be configured to individually receive an applied drive current.

[0027] Therefore, in the B sub-pixel, the second light-emitting stack can be individually driven without driving the first light-emitting stack, and blue light can be emitted and output. Thus, power consumption is reduced and low-power driving is possible. Also, in the B sub-pixel, since there is no need to form a blue color filter pattern, the material cost of the color filter pattern can be reduced.

[0028] In addition, in this specification, when using a tandem-structured light-emitting diode, a first light-emitting stack, a second light-emitting stack, and a third light-emitting stack that constitute the light-emitting diode and emit red, green, and blue light, and a first intermediate electrode and a second intermediate electrode disposed therebetween are separated for each sub-pixel by a multi-stage overhang structure partition disposed around the sub-pixel, and the first intermediate electrode, the second intermediate electrode, and the cathode can be configured to individually receive the application of a driving current.

[0029] As a result, the first light-emitting stack, the second light-emitting stack, and the third light-emitting stack in each sub-pixel can be individually driven and combinedly driven, so that power consumption is reduced and low-power driving becomes possible.

[0030] In addition, each sub-pixel is not limited to a light-emitting region of a specific color and can function as a region that can emit various colors as needed, so that the color image expression ability in the light-emitting display device can be enhanced. Furthermore, since it is not necessary to provide a corresponding specific color filter pattern in all sub-pixels, it is not necessary to form a color filter layer, and the material cost of the color filter pattern can be further reduced.

Brief Description of the Drawings

[0031]

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Mode for Carrying Out the Invention

[0032] The advantages, features, and the methods for achieving them of the present invention will become clear by referring to the embodiments described in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below and can be embodied in various different forms. However, this embodiment is provided so that the disclosure of the present invention is complete and that those with ordinary knowledge in the technical field to which the present invention pertains can fully understand the scope of the invention, and the present invention is defined by the scope of the claims.

[0033] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are exemplary and the present invention is not limited thereto. Throughout the specification, the same reference numerals indicate the same components.

[0034] In addition, when explaining the present invention, if it is determined that a specific description of related known technologies would obscure the gist of the present invention, the detailed description thereof will be omitted. When "comprises", "includes", "has", "holds", "becomes", etc. are described in this specification, other parts can be added unless both "only" are described. Also, when a component is described in the singular form, it can be interpreted in the plural form unless otherwise explicitly stated.

[0035] In addition, when interpreting components, even without an explicit description, they shall include the error range.

[0036] For example, when explaining the positional relationship between two components using terms such as "above", "on the upper part", "on the lower part", "sideways", etc., if "directly" or "immediately" is not described, one or more other components can also be positioned between the two components.

[0037] Also, in the description of the time relationship, for example, when explaining the temporal precedence relationship using terms such as "after", "subsequent to", "next", "before", etc., if "directly" or "immediately" is not described, discontinuous cases can be included.

[0038] Also, terms such as "first" and "second" are used to distinguish components, but the components are not limited to such terms. Therefore, the first component mentioned below can also be the second component within the technical idea of the present invention.

[0039] Each feature in the multiple embodiments of the present invention can be partially or wholly combined or combined, and various technical linkages and drives are possible. Also, each embodiment can be implemented independently of each other or implemented in association with each other.

[0040] Hereinafter, with reference to the drawings, embodiments of the present invention will be described in detail. On the other hand, in the following embodiments, the same or similar reference numerals may be assigned to the same or similar components, and the specific description thereof may be omitted.

[0041] First Embodiment FIG. 1 is a plan view schematically showing a light-emitting display device according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view taken along the cutting line II-II' of FIG. 1, and FIG. 3 is an enlarged cross-sectional view showing the A region of FIG. 2, showing a partition wall and its periphery.

[0042] The light-emitting display device 10 according to an embodiment of the present invention includes a light-emitting diode OD which is a self-luminous element, and can include any display device for displaying an image.

[0043] In this embodiment, for convenience of explanation, an organic light-emitting display device is taken as an example of the light-emitting display device 10.

[0044] Also, the light-emitting display device 10 may be a top emission type or a bottom emission type. In this embodiment, for convenience of explanation, the top emission type light-emitting display device 10 is taken as an example.

[0045] Referring to FIGS. 1 to 3, in the light-emitting display device 10 (or its light-emitting display panel) of this embodiment, a display area AA for displaying an image and a non-display area NA around it can be defined.

[0046] The display area AA can include a plurality of sub-pixels SP arranged along a plurality of row lines (or horizontal lines) and a plurality of column lines (or vertical lines) on the substrate 101.

[0047] On the other hand, although not specifically shown, on the substrate 101, a plurality of gate wirings (or scan wirings) extending along the row direction (or horizontal direction, or first direction), and a plurality of data wirings extending along the column direction (or vertical direction, or second direction) can be formed. Each sub-pixel SP can be connected to the corresponding gate wiring and data wiring. Also, a power supply wiring for transmitting a high potential driving voltage can be formed on the substrate 101.

[0048] The plurality of sub-pixels SP formed on the substrate 101 can include sub-pixels SP of different colors that constitute a pixel, which is a unit for displaying a color image. In one example, the plurality of sub-pixels SP that constitute a pixel can include B, R, and G sub-pixels (or first sub-pixel SPb, second sub-pixel SPr, and third sub-pixel SPg) that respectively display a first color, a second color, and a third color, for example, blue (B), red (R), and green (G). As another example, the plurality of sub-pixels SP that constitute a pixel can further include a W sub-pixel that displays white.

[0049] In this embodiment, a pixel composed of R, G, and B sub-pixels SPr, SPg, and SPb will be taken as an example.

[0050] The R, G, and B sub-pixels SPr, SPg, and SPb can be arranged in various shapes. For example, as shown in FIG. 1, the sub-pixels SP of the same color can be arranged along the column direction, and the sub-pixels SP of different colors can be alternately and repeatedly arranged along the row direction to form a stripe shape, but it is not limited thereto.

[0051] Each sub-pixel SP can include, for example, a light-emitting diode OD that can create white light.

[0052] In this embodiment, the light-emitting diode OD can have a tandem structure. The light-emitting diode OD can include a plurality of light-emitting stacks (or light-emitting units) ST: ST1, ST2 that can emit two or more different colors that are mixed to realize white light.

[0053] In this embodiment, for the sake of convenience of explanation, an example will be given where the light-emitting diode OD is composed of two light-emitting stacks, a first light-emitting stack ST1 and a second light-emitting stack ST2, the first light-emitting stack ST1 and the second light-emitting stack ST2 emit different colors, and when the colors emitted by the first light-emitting stack ST1 and the second light-emitting stack ST2 are mixed, white light can be created. In particular, an example will be given where the first light-emitting stack ST1 emits yellow, which is a mixed color of red and green, and the second light-emitting stack ST2 emits blue.

[0054] In addition, the light-emitting diode OD can include a charge generation layer (CGL) disposed between adjacent light-emitting stacks ST. Such a charge generation layer CGL functions to lower the Fermi level so that electrons and holes can easily move between adjacent light-emitting stacks ST.

[0055] On the other hand, the light-emitting diode OD can include an intermediate electrode IE disposed between the first light-emitting stack ST1 and the second light-emitting stack ST2. In this way, when the intermediate electrode IE is formed between the light-emitting stacks ST1 and ST2 that make up the light-emitting diode OD, it becomes possible to individually apply a light-emitting current (or drive current) to the intermediate electrode IE. In other words, a light-emitting current (or second light-emitting current) independent of the light-emitting current (or first light-emitting current) applied to the anode 150 can be applied to the intermediate electrode IE.

[0056] In this way, when a light-emitting current is individually applied to the intermediate electrode IE, the second light-emitting stack ST2, which is the light-emitting stack ST of the light-emitting diode OD through which the light-emitting current flows, can perform a light-emitting operation individually.

[0057] For example, the first light-emitting stack ST1 and the second light-emitting stack ST2 can perform a light-emitting operation together by the light-emitting current applied to the anode 150, and the second light-emitting stack ST2 can perform a light-emitting operation by the light-emitting current applied to the intermediate electrode IE acting as an anode.

[0058] In this embodiment, for some sub-pixels SP, a corresponding light-emitting current can be applied to the intermediate electrode IE in the light-emitting diode OD thereof, and no light-emitting current is applied to the anode 150. Also, for other sub-pixels SP, no light-emitting current is applied to the intermediate electrode IE in the light-emitting diode OD thereof, and a corresponding light-emitting current can be applied to the anode 150.

[0059] In such a case, in the sub-pixel SP to which a light-emitting current is applied to the intermediate electrode IE, among the first light-emitting stack ST1 and the second light-emitting stack ST2, the second light-emitting stack ST2 to which the light-emitting current is applied is driven to perform a light-emitting operation, and the first light-emitting stack ST1 is not driven, so a light-emitting operation is not performed (i.e., it enters a light-off state). In this way, by the second light-emitting stack ST2 independently performing a light-emitting operation, the light-emitting diode OD of the sub-pixel SP will substantially emit blue light.

[0060] Also, in the sub-pixel SP where no light-emitting current is applied to the intermediate electrode IE and the corresponding light-emitting current is applied to the anode 150, both the first light-emitting stack ST1 and the second light-emitting stack ST2 are driven to perform a light-emitting operation. In this way, by the first light-emitting stack ST1 and the second light-emitting stack ST2 performing a light-emitting operation together, the light-emitting diode OD of the sub-pixel SP will substantially produce white light.

[0061] Regarding this, in this embodiment, for the B sub-pixel SPb showing blue, it is configured such that a light-emitting current is applied to its intermediate electrode IE, and for the R and G sub-pixels SPr and SPg showing red and green, the intermediate electrode IE: IEd is configured such that no light-emitting current is separately applied. Here, the intermediate electrode IE of the R and G sub-pixels SPr and SPg to which no light-emitting current is separately applied corresponds to the dummy intermediate electrode IEd. In other examples, the intermediate electrodes IE of the R and G sub-pixels SPr and SPg may be composed of activated intermediate electrodes, and the intermediate electrode IE of the B sub-pixel SPb may be composed of a dummy intermediate electrode IEd.

[0062] In such a case, the intermediate electrode IE of the B sub-pixel SPb to which a light-emitting current is applied and the dummy intermediate electrode IEd of the R and G sub-pixels SPr and SPb to which no light-emitting current is applied are physically separated from each other and can be disconnected.

[0063] Such a disconnection structure of the intermediate electrode IE and the dummy intermediate electrode IEd can be realized, for example, by a partition wall OH that is an overhang structure.

[0064] For example, a partition wall OH with an overhang structure can be arranged along the boundary between the B sub-pixel SPb where the intermediate electrode IE is formed and the adjacent R and G sub-pixels SPr and SPg. As a result, the intermediate electrode IE is formed in the B sub-pixel SPb, dummy intermediate electrodes IEd are formed in the R and G sub-pixels SPr and SPg, and the intermediate electrode IE and the dummy intermediate electrodes IEd can be physically separated from each other and in a disconnected state.

[0065] The separation structure of the intermediate electrode IE by the partition wall OH with the overhang structure can be similarly applied to the first light-emitting stack ST1, the second light-emitting stack ST2, and the charge generation layer CGL. As a result, the first light-emitting stack ST1, the second light-emitting stack ST2, and the charge generation layer CGL can be physically separated and in a disconnected state between the B sub-pixel SPb and the adjacent R and G sub-pixels SPr and SPg.

[0066] Similarly, the cathode 169 constituting the light-emitting diode OD can also be physically separated and in a disconnected state between the B sub-pixel SPb and the adjacent R and G sub-pixels SPr and SPg by the partition wall OH with the overhang structure.

[0067] Thus, in this embodiment, when using the tandem-structured light-emitting diode OD capable of realizing white light emission, in the B sub-pixel SPb, the second light-emitting stack ST2 that emits blue light, which is the corresponding color, is individually driven, and the first light-emitting stack ST1 of another color disposed thereunder is not driven. In the R and G sub-pixels SPr and SPg, the first light-emitting stack ST1 that emits yellow light, which is the related color, and the second light-emitting stack ST2 that emits blue light disposed thereabove can be simultaneously driven.

[0068] Thus, it is sufficient for the B sub-pixel SPb to only drive the second light-emitting stack ST2 that exhibits the corresponding color and not to drive the first light-emitting stack ST1, so that power consumption can be reduced.

[0069] In addition, since the B sub-pixel SPb drives the blue second light-emitting stack ST2 and can exhibit blue, there is no need to form a blue color filter pattern on the B sub-pixel SPb, and the material cost of the color filter pattern can be reduced.

[0070] The planar and cross-sectional structures of the sub-pixel SP in this embodiment will be further described in detail. On the other hand, for convenience of explanation, in FIG. 2, the charge generation layer CGL disposed between the first light-emitting stack ST1 and the second light-emitting stack ST2 is omitted, and in FIG. 3 which is an enlarged view of a partial region of FIG. 2, the structure in which the charge generation layer CGL is disposed is shown.

[0071] Referring to FIGS. 2 and 3 in combination with FIG. 1, for each sub-pixel SP, a sub-pixel driving circuit including a thin-film transistor T and a light-emitting diode OD can be formed on the substrate 101. On the other hand, although not specifically shown, a plurality of thin-film transistors including the thin-film transistor T shown in the figure can be formed in the sub-pixel driving circuit of each sub-pixel SP, and at least one capacitor can be formed.

[0072] More specifically, a thin-film transistor T can be formed in each sub-pixel SP on the substrate 101. The thin-film transistor T can be connected to, for example, the light-emitting diode OD and supply a light-emitting current.

[0073] In this regard, in the B sub-pixel SPb which is a sub-pixel SP in which a light-emitting current is applied to the intermediate electrode IE, the light-emitting current can be applied to the intermediate electrode IE through the thin-film transistor T provided therein. Further, since a light-emitting current is not directly supplied to the anode 150 of the B sub-pixel SPb, a thin-film transistor connected to the anode 150 and supplying a light-emitting current may not be provided.

[0074] In each of the R and G sub-pixels SPr and SPg, which are sub-pixels SP provided with a dummy intermediate electrode IEd that is an intermediate electrode IE to which a light-emitting current is not separately applied, the light-emitting current can be applied to the anode 150 through the thin-film transistor T provided therein. Further, since the light-emitting current is not directly supplied to the dummy intermediate electrode IEd of the R and G sub-pixels SPr and SPg, a thin-film transistor connected to the dummy intermediate electrode IEd and supplying the light-emitting current does not have to be provided.

[0075] For convenience of explanation, although not specifically shown, the thin-film transistor T disposed in each sub-pixel SP can include a gate electrode, a source electrode, a drain electrode, and a semiconductor layer.

[0076] Here, the semiconductor layer of the thin-film transistor T can be formed of, for example, amorphous silicon, polycrystalline silicon, or an oxide semiconductor material, but is not limited thereto.

[0077] Further, the thin-film transistor T may have a coplanar structure (or a top-gate structure) in which the gate electrode is located on the semiconductor layer and the source electrode and the drain electrode are disposed on the gate electrode, or an inverted staggered structure (or a bottom-gate structure) in which the semiconductor layer is located on the gate electrode and the source electrode and the drain electrode are disposed on the semiconductor layer.

[0078] On the other hand, a buffer layer made of an insulating material can be formed between the thin-film transistor T and the substrate 101.

[0079] A protective layer 135 can be formed as an insulating layer made of an insulating material on the thin-film transistor T.

[0080] The protective layer 135 can be formed to include at least one of inorganic insulating materials such as silicon oxide and silicon nitride and organic insulating materials such as benzocyclobutene and photoacrylic, but is not limited thereto. Such a protective layer 135 may be a single-layer film or a multi-layer film.

[0081] In the protective layer 135, a drain contact hole CHd for exposing the drain electrode of the thin film transistor T can be formed.

[0082] On the protective layer 135, an anode 150 (or a first electrode) can be formed for each sub-pixel SP.

[0083] The anode 150 of the sub-pixel SP is substantially integrally formed within the sub-pixel SP and may be formed in a continuous shape within the sub-pixel SP. Such an anode 150 can be physically separated from and spaced apart from the anodes 150 of adjacent sub-pixels SP.

[0084] The anodes 150 disposed in each of the R and G sub-pixels SPr and SPg can contact the drain electrode of the thin film transistor T via the drain contact hole CHd.

[0085] When the light-emitting display device 10 is a top emission type, the anode 150 can include an opaque metal substance and have high reflectivity. For example, the anode 150 can include, but is not limited to, Ag, Al, Mo, Ti, an APC (Al - Pd - Cu) alloy, etc.

[0086] On the other hand, the anode 150 can have a multilayer structure. For example, it can have a multilayer structure in which a transparent conductive substance (e.g., ITO, IZO, IZTO, etc.) is laminated on at least one of the lower and upper portions made of the aforementioned opaque metal substance.

[0087] As another example, when the light-emitting display device 10 is a bottom emission type, the anode 150 can include a transparent electrode layer and may not be provided with a reflective layer.

[0088] On the anode 150 and the protective layer 135, a bank 160 can be formed along the boundary between each sub-pixel SP (or the boundary between adjacent sub-pixels SP).

[0089] Such a bank 160 can be formed to cover the end portion of the anode 150 disposed in each sub-pixel SP.

[0090] Such a bank 160 can be formed of, for example, at least one of an acrylic resin, an epoxy resin, a phenolic resin, a polyamide-based resin, a polyimide-based resin, an unsaturated polyester-based resin, a polyphenylene-based resin, a polyphenylene sulfide-based resin, benzocyclobutene, and a photoresist, but is not limited thereto.

[0091] The bank 160 configured as described above can be formed so as to surround the sub-pixel SP substantially along the periphery of each sub-pixel SP and can have an opening OP therein. Through such an opening OP, the anode 150 of each sub-pixel SP can be in an exposed state at the upper portion.

[0092] An overhang structure partition wall OH can be formed on the bank 160. Such a partition wall OH can function to separate the components of the light-emitting diode OD.

[0093] Regarding the arrangement of the partition wall OH, for example, on the upper surface of the bank 160 located between the B sub-pixel SPb, which is a sub-pixel SP where the intermediate electrode IE is formed, and the R and G sub-pixels SPr and SPg adjacent thereto and where the dummy intermediate electrode IEd is formed, an overhang structure partition wall OH can be formed.

[0094] Such a partition wall OH can include, for example, a first portion OH_1 and a second portion OH_2 that is located on the first portion OH_1 and has a larger size (or width, or area) than the first portion OH_1 to form an overhang structure.

[0095] Thus, the lower first portion OH_1 has a relatively narrow width, and the second portion OH_2 located on the first portion OH_1 has a relatively wide width. Therefore, the second portion OH_2 has an overhang shape protruding in both lateral directions of the first portion OH_1, and the partition wall OH, which is a structure composed of the combination of the first portion OH_1 and the second portion OH_2, can have an overhang structure. Thereby, the second portion OH_2 can have a convex portion (or overhang portion) PP that protrudes outside the first portion OH_.

[0096] Such a partition wall OH can be formed to extend along the column direction, for example, as shown in FIG. 1.

[0097] The partition wall OH is located at the boundaries on both sides of the B sub-pixel SPb, extends along the column direction, and can physically separate the column line region in which the B sub-pixels SPb are arranged from the column line region in which the R and G sub-pixels SPb and SPg are arranged.

[0098] In other words, in the region between two adjacent partition walls OH located on both sides of the B sub-pixel SPb, the B sub-pixels SPb arranged in one column line can be located. That is, in the region between two adjacent partition walls OH located on both sides of the combination of the R and G sub-pixels SPr and SPg, the R and G sub-pixels SPr and SPg arranged in two column lines can be located.

[0099] Thus, in this embodiment, the partition wall OH having an overhang structure can be formed to extend along the boundaries on both sides of the B sub-pixel SPb in which the intermediate electrode IEd is formed. Also, along the boundary between the R and G sub-pixels SPr and SPg, it is not necessary to form the partition wall OH.

[0100] On the other hand, a connection electrode COE connected to the drain electrode of the corresponding thin film transistor T can be formed on the bank 160 located at the boundary of the B sub-pixel SPb.

[0101] For example, the connection electrode COE can be formed on the upper surface of the bank 160 and extend along the inner direction of the B sub-pixel SPb. A part of the outside of the connection electrode COE can be located in a state covered by the partition wall OH (more specifically, its first part OH_1).

[0102] In other words, the first part OH_1 of the partition wall OH covers a part of the outside of the connection electrode COE, and the remaining part of the connection electrode COE is not covered by the first part OH_1 and can be located under the convex part PP of the second part OH_2 and be substantially exposed.

[0103] On the other hand, in the B sub-pixel SPb, a drain contact hole CHd can be formed in the part of the bank 160 where the connection electrode COE is formed. In this way, a drain contact hole CHd can be formed in the protective layer 135 and the bank 160 in the B sub-pixel SPb.

[0104] As a result, the connection electrode COE can contact the drain electrode of the corresponding thin-film transistor T through the drain contact hole CHd.

[0105] In this way, on the substrate 101 where the partition wall OH and the connection electrode COE are formed, a plurality of laminated films for forming the light-emitting diode OD can be deposited, and the tandem-structured light-emitting diode OD can be formed in the sub-pixel SP.

[0106] For example, the light-emitting diode OD can include a first light-emitting stack ST1 and a second light-emitting stack ST2 laminated upward, a cathode (or second electrode) 169 laminated on the second light-emitting stack ST2, and a charge generation layer CGL laminated between the first light-emitting stack ST1 and the second light-emitting stack ST2. Also, an intermediate electrode IE can be formed between the charge generation layer CGL and the second light-emitting stack ST2.

[0107] In this way, the laminated film constituting the light-emitting diode OD can be structured to be separated by the partition wall OH.

[0108] Regarding this, the first light-emitting stack ST1 that emits yellow light can be separated via the partition wall OH. Thereby, on the anode 150 and the bank 160 of the B sub-pixel SPb, the corresponding first light-emitting stack ST1 can be formed. Also, another first light-emitting stack ST1 that is separated from and partitioned from the first light-emitting stack ST1 of the B sub-pixel SPb by the partition wall OH can be integrally (or continuously) formed on the anodes 150 and the banks 160 of the R and G sub-pixels SPr and SPg.

[0109] Such a first light-emitting stack ST1 can include a plurality of organic stacked films for performing a light-emitting function. For example, it can include, but is not limited to, a hole injection layer, a hole transport layer, a light-emitting material layer, an electron transport layer, etc.

[0110] Here, the first light-emitting stack ST1 formed in the B sub-pixel SPb can be formed so as to expose at least a part of the connection electrode COE located under the partition wall OH (more specifically, located under its convex portion PP). In this embodiment, a case where the first light-emitting stack ST1 is formed to cover the end portion of the connection electrode COE is taken as an example.

[0111] In a state where the first light-emitting stack ST1 is formed by vapor deposition, the connection electrode COE can be in a state of being exposed between the first light-emitting stack ST1 and the partition wall OH.

[0112] The charge generation layer CGL formed on the first light-emitting stack ST1 can also be formed in substantially the same shape as the first light-emitting stack ST1.

[0113] The charge generation layer CGL is separated by the partition wall OH, formed in the B sub-pixel SPb, and can also be integrally formed in the R and G sub-pixels SPr and SPg. And the charge generation layer CGL formed in the B sub-pixel SPb can be formed to expose at least a part of the connection electrode COE located under the partition wall OH. However, similar to the first light-emitting stack ST1, it can be formed to cover the end portion of the connection electrode COE.

[0114] The intermediate electrode IE formed on the charge generation layer CGL can be formed to be separated by the partition wall OH, similar to the first light-emitting stack ST1 and the charge generation layer CGL.

[0115] Regarding this, an intermediate electrode IE is formed on the charge generation layer CGL of the B sub-pixel SPb, and a dummy intermediate electrode IEd is formed on the charge generation layer CGL of the R and G sub-pixels SPr and SPg. The intermediate electrode IE and the dummy intermediate electrode IEd can be separated from each other by the partition wall OH.

[0116] Here, the intermediate electrode IE of the B sub-pixel SPb is formed to extend above the connection electrode COE and can contact the exposed connection electrode COE. Thereby, in the B sub-pixel SPb, the intermediate electrode IE can be electrically connected to the thin-film transistor T via the connection electrode COE. As a result, the light-emitting current flowing through the thin-film transistor T can be applied to the connection electrode COE.

[0117] Also, the dummy intermediate electrode IEd disposed in the R and G sub-pixels SPr and SPg is configured such that no light-emitting current is separately applied, is substantially interposed between the first light-emitting stack ST1 and the second light-emitting stack ST2, and serves as a conductive laminated film through which electrons and holes pass.

[0118] On the one hand, in this embodiment, when forming such intermediate electrodes IE and dummy intermediate electrodes IEd, the deposition angle when depositing the metal material forming them is set to be smaller than the deposition angle of the material forming the first light-emitting stack ST1 and the charge generation layer CGL disposed below them. Here, the deposition angle is the angle with respect to the surface of the substrate 101.

[0119] In this case, the intermediate electrodes IE and the dummy intermediate electrodes IEd can be formed so as to have a larger area than the plurality of stacked films located below them.

[0120] As a result, the intermediate electrodes IEd and the dummy intermediate electrodes IEd can be formed with a larger size (or width) than the first light-emitting stack ST1 and the charge generation layer CGL, and can extend outward while substantially covering the first light-emitting stack ST1 and the charge generation layer CGL (that is, in a form extending toward the partition wall OH).

[0121] Thereby, the intermediate electrode IE disposed in the B sub-pixel SPb can contact the connection electrode COE exposed outside the first light-emitting stack ST1 and the charge generation layer CGL, and can receive the application of a light-emitting current capable of driving the second light-emitting stack ST2 of the B sub-pixel SPb.

[0122] The second light-emitting stack ST2 that emits blue light and is formed on the intermediate electrodes IE and the dummy intermediate electrodes IEd can be formed to be separated by the partition wall OH in the same manner as the first light-emitting stack ST1 and the charge generation layer CGL.

[0123] The corresponding second light-emitting stack ST2 can be formed on the intermediate electrode IE of the B sub-pixel SPb. Also, another second light-emitting stack ST2 that is separated from and partitioned from the second light-emitting stack ST2 of the B sub-pixel SPb by the partition wall OH can be integrally formed on the dummy intermediate electrodes IEd of the R and G sub-pixels SPr and SPg.

[0124] Such a second light-emitting stack ST2 can include a plurality of organic stacked films for performing a light-emitting function. For example, similar to the first light-emitting stack ST1, it can include, but is not limited to, a hole injection layer, a hole transport layer, a light-emitting material layer, an electron transport layer, and the like.

[0125] Here, the second light-emitting stack ST2 formed on the B sub-pixel SPb can be formed to have an area smaller than that of the intermediate electrode IE located thereunder. In other examples, the second light-emitting stack ST2 formed on the B sub-pixel SPb can also be formed larger so as to cover the intermediate electrode IE.

[0126] Also, the second light-emitting stack ST2 formed on the R and G sub-pixels SPr and SPg can be formed to have an area smaller than that of the dummy intermediate electrode IEd located thereunder. In other examples, the second light-emitting stack ST2 formed on the R and G sub-pixels SPr and SPg can also be formed larger so as to cover the dummy intermediate electrode IEd.

[0127] The size of the second light-emitting stack ST2 on the intermediate electrode IE and the dummy intermediate electrode IEd can be adjusted according to the evaporation angle.

[0128] The cathode 169 formed on the second light-emitting stack ST2 can have a shape similar to that of the second light-emitting stack ST1.

[0129] The cathode 169 is separated by the partition wall OH, formed on the B sub-pixel SPb, and can be integrally formed in the R and G sub-pixels SPr and SPg.

[0130] Here, in order to prevent a short circuit (or contact) between the cathode 169 and the intermediate electrode IE in the B sub-pixel SPb, and a short circuit between the cathode 169 and the dummy intermediate electrode IEd in the R and G sub-pixels SPr and SPg, the size (or width) of the cathode 169 can be made equal to or smaller than the size of the second light-emitting stack ST2 thereunder.

[0131] On the other hand, the cathode 169 can extend along the column direction which is the extending direction of the partition wall OH. In this case, the cathode 169 extends into the non-display area NA, is connected to the voltage wiring arranged in the non-display area NA, and can receive the application of the low-potential driving voltage. Refer to FIG. 4 in this regard.

[0132] FIG. 4 is a diagram schematically showing the voltage wiring for supplying the low-potential driving voltage into the display area according to the first embodiment of the present invention.

[0133] Referring to FIG. 4, for example, the voltage wiring PL can be arranged on both sides of the display area AA, for example, in the non-display areas NA on the upper side and the lower side in the drawing. Such voltage wiring PL can directly receive the low-potential driving voltage (Vss) output from an external power supply circuit (not shown).

[0134] In this case, the cathodes 169:169a extending in the column direction along the B sub-pixel SPb, and the cathodes 169:169b extending in the column direction along the R and G sub-pixels SPr, SPb penetrate the display area AA, and one end of them is connected to the voltage wiring PL arranged above the non-display area NA via the contact hole CHp, and the other end can be connected to the voltage wiring PL arranged below the non-display area NA via the contact hole CHp.

[0135] As a result, the low-potential driving voltage Vss can be applied to each of the cathode 169a corresponding to the B sub-pixel SPb and the cathodes 169b corresponding to the R and G sub-pixels SPr, SPg.

[0136] The cathode 169 can include a transparent electrode layer made of a transparent conductive material (for example, ITO, IZO, IZTO, etc.) when the light-emitting display device 10 is a top emission type. Further, when the light-emitting display device 10 is a bottom emission type, the cathode 169 can include a reflective layer made of metal.

[0137] In this way, by using the partition wall OH, the first light-emitting stack ST1, the charge generation layer CGL, the intermediate electrode IE, the second light-emitting stack ST, and the cathode 169 can be separated.

[0138] As a result, in the B sub-pixel SPb, on the anode 150, a yellow first light-emitting stack ST1, a charge generation layer CGL, an intermediate electrode IE, a blue second light-emitting stack ST2, and a cathode 169 are formed in a pattern by the partition wall OH. The intermediate electrode IE is in contact with the connection electrode COE and can receive the application of a light-emitting current for driving the second light-emitting stack ST2 from the corresponding thin-film transistor T. Thereby, the light-emitting current flows through the second light-emitting stack ST2, and the light-emitting diode OD can emit and output blue light.

[0139] Also, in the R and G sub-pixels SPb and SPg, on the anode 150, a yellow first light-emitting stack ST1, a charge generation layer CGL, a dummy intermediate electrode IEd, a blue second light-emitting stack ST2, and a cathode 169 are formed in a pattern by the partition wall OH. The anode 150 in each of the R and G sub-pixels SPr and SPg is connected to the corresponding thin-film transistor T and can receive the application of a light-emitting current for driving the first light-emitting stack ST1 and the second light-emitting stack ST2 together. Thereby, the light-emitting current flows through the first light-emitting stack ST1 and the second light-emitting stack ST2, and the light-emitting diode OD can emit and output white light, which is a mixed color of yellow and blue.

[0140] In this way, in this embodiment, the B sub-pixel SPb can individually drive the blue second light-emitting stack ST2 to be expressed and emit blue light, and each of the R and G sub-pixels SPr and SPg can drive the yellow first light-emitting stack ST1 and the blue second light-emitting stack ST2 together to emit white light.

[0141] On one hand, along the B sub-pixels SPb arranged in the same column line, as described above, the intermediate electrodes IE patterned by the partition walls OH can be continuously formed. In this case, the leakage current from the intermediate electrodes IE between adjacent B sub-pixels SPb along the column line is negligibly small in reality. Therefore, crosstalk due to the leakage current between adjacent B sub-pixels SPb is not visually recognized, and thus image distortion caused by the leakage current does not occur.

[0142] In this way, on the cathode 169 separated by the partition wall OH of the overhang structure, the sealing layer 170 can be formed substantially over the entire surface of the substrate 101.

[0143] The sealing layer 170 can function to improve reliability by blocking the penetration of moisture and oxygen from the outside.

[0144] Furthermore, the sealing layer 170 can planarize the substrate 101 on which the cathode 169 is formed.

[0145] Such a sealing layer 170 can be a single layer or a multi-layer composed of at least one of an inorganic insulating substance and an organic insulating substance.

[0146] On the sealing layer 170, a color filter layer CF can be formed. The color filter layer CF is located corresponding to each of the R and G sub-pixels SPr and SPg, and can include a red color filter pattern CFr and a green color filter pattern CFg for expressing the corresponding colors of red and green.

[0147] Furthermore, the color filter layer CF can be located corresponding to the B sub-pixel SPb and can include a transparent pattern CFt having a transparent property.

[0148] As described above, since the light-emitting diodes OD in each of the R and G sub-pixels SPr and SPg emit white, which is a mixed color, by the light emission of the first light-emitting stack ST1 and the second light-emitting stack ST2, in each of the R and G sub-pixels SPr and SPg, a red color filter pattern CFr for expressing the corresponding red color and a green color filter pattern CFg for expressing the green color can be arranged.

[0149] On the other hand, in the light-emitting diode OD of the B sub-pixel SPb, the light-emitting operation of the yellow first light-emitting stack ST1 is turned off, and the blue second light-emitting stack ST2 performs a light-emitting operation to emit blue. Therefore, it is not necessary to arrange a blue color filter pattern for expressing the corresponding color in the B sub-pixel SPb.

[0150] Therefore, for the B sub-pixel SPb, a transparent pattern CFt having a transparent property that can transmit the blue light emitted from the light-emitting diode OD as it is can be arranged.

[0151] In this way, by forming the transparent pattern CFt instead of forming the corresponding color filter pattern for the B sub-pixel SPb, the material cost of the color filter pattern can be reduced.

[0152] Also, as described above, in the B sub-pixel SPb, among the light-emitting stacks ST1 and ST2 constituting the light-emitting diode OD, the second light-emitting stack ST2 that emits the corresponding color is individually driven, and the first light-emitting stack ST1 of another color is not driven, so that power consumption can be reduced.

[0153] On the other hand, an overcoat film 180 for protecting while covering the color filter layer CF can be formed on the color filter layer CF. The substrate on which the overcoat film 180 is formed can have a substantially flat surface.

[0154] Second Embodiment FIG. 5 is a cross-sectional view schematically showing a light-emitting display device according to a second embodiment of the present invention, and FIG. 6 is a cross-sectional view showing an enlarged B region of FIG. 5, showing a partition wall and its periphery.

[0155] Hereinafter, for the same or similar configurations as those in the first embodiment described above, specific descriptions may be omitted.

[0156] Referring to FIGS. 5 and 6, in the light-emitting display device 10 of this embodiment, similar to the first embodiment, when using the tandem-structured light-emitting diode OD, the first light-emitting stack ST1 and the second light-emitting stack ST2 constituting the light-emitting diode OD can be separated by a partition wall OH arranged along the boundaries on both sides of the B sub-pixel SPb.

[0157] In such a separation structure, in the B sub-pixel SPb, by applying a light-emitting current to the intermediate electrode IE and turning off the light-emitting current to the anode 150, the second light-emitting stack ST2 that emits blue, which is the corresponding color, is individually driven, and the first light-emitting stack ST1 of another color arranged thereunder is not driven (i.e., in a light-off state). Also, in the R and G sub-pixels SPr and SPg, by applying a light-emitting current to the anode 150 and turning off the light-emitting current to the dummy intermediate electrode IEd, the first light-emitting stack ST1 that emits yellow, which is the related color, and the second light-emitting stack ST2 that emits blue and is arranged above it can be driven simultaneously.

[0158] On the other hand, in this embodiment, in order to improve the blue light-emitting characteristics of the light-emitting diode OD, a plurality of second light-emitting stacks ST2 that emit blue can be stacked. In this embodiment, for the sake of convenience of explanation, the case where two second light-emitting stacks ST2: ST2_1 and ST2_2 are stacked is taken as an example. At this time, the second light-emitting stack ST2 located at the lower part is defined as the second-1 light-emitting stack ST2_1, and the second light-emitting stack ST2 located at the upper part is defined as the second-2 light-emitting stack ST2_2.

[0159] The light-emitting material layer that emits blue light has low lifespan and efficiency. To improve them, in this embodiment, a plurality of second light-emitting stacks ST2 are arranged in the tandem-structured light-emitting diode OD, and the lifespan and efficiency of blue light can be improved.

[0160] The second-1 light-emitting stack ST2_1 and the second-2 light-emitting stack ST2_2 that are stacked vertically are separated by the partition wall OH with an overhang structure, and can be formed in each of the B sub-pixel SPb and the R and G sub-pixels SPr and SPg. Such second-1 light-emitting stack ST2_1 and second-2 light-emitting stack ST2_2 can have substantially the same shape in plan view and cross section.

[0161] Also, between the second-1 light-emitting stack ST2_1 and the second-2 light-emitting stack ST2_2, a charge generation layer CGL (or the second charge generation layer CGL2) with a structure separated by the partition wall OH can be arranged.

[0162] On the other hand, between the first light-emitting stack ST1 and the second-1 light-emitting stack ST2_1, a charge generation layer CGL (or the first charge generation layer CGL1) and an intermediate electrode IE with a structure separated by the partition wall OH can be arranged in the same manner as in the first embodiment.

[0163] Here, in the B sub-pixel SPb, the intermediate electrode IE can be formed so as to contact the connection electrode COE. Also, in the R and G sub-pixels SPr and SPg, a dummy intermediate electrode IEd separated from the intermediate electrode IE can be arranged.

[0164] Also, on the second-2 light-emitting stack ST2, a cathode 169 with a structure separated by the partition wall OH can be formed.

[0165] A sealing layer 170 can be formed on the cathode 169, and a color filter layer CF can be formed on the sealing layer 170.

[0166] At this time, similar to the first embodiment, the color filter layer CF can include a red color filter pattern CFr and a green color filter pattern CFg that are respectively positioned corresponding to each of the R and G sub-pixels SPr and SPg, and a transparent pattern CFt that is positioned corresponding to the B sub-pixel SPb.

[0167] As described above, in this embodiment, a plurality of second light emitting stacks ST2 that emit blue light can be stacked on the tandem structure light emitting diode OD. As a result, the lifespan and efficiency of blue light can be increased, and the blue light emission characteristics in the light emitting diode OD can be improved.

[0168] Third Embodiment FIG. 7 is a plan view schematically showing a light emitting display device according to a third embodiment of the present invention, FIG. 8 is a cross-sectional view taken along the cutting line VIII-VIII' of FIG. 7, and FIG. 9 is an enlarged cross-sectional view showing the region of FIG. 8.

[0169] Hereinafter, for configurations similar to the first and second embodiments described above, specific descriptions may be omitted.

[0170] Referring to FIGS. 7 to 9, the light emitting display device 10 of this embodiment, different from the first and second embodiments, enables individual driving and combined driving of a plurality of light emitting stacks ST that constitute the tandem structure light emitting diode OD formed in each sub-pixel SP.

[0171] The tandem structure light emitting diode OD provided in each sub-pixel SP is sequentially stacked in the vertical direction, can be individually driven, and can include three or more light emitting stacks ST: STr, STg, STb that emit different colors from each other.

[0172] Here, in this embodiment, for the sake of convenience of explanation, taking the case where the light-emitting diodes OD in each sub-pixel SP are composed of three light-emitting stacks ST, namely, R, G, and B light-emitting stacks (or the first, second, and third light-emitting stacks) STr, STg, and STb that emit red, green, and blue light respectively as an example. Also, taking the case where the R, G, and B light-emitting stacks STr, STg, and STb are stacked upward in this order as an example. On the other hand, the stacking order of the R, G, and B light-emitting stacks STr, STg, and STb may be changed according to circumstances (or as required).

[0173] A light-emitting current is applied to each of such R, G, and B light-emitting stacks STr, STg, and STb, and they can emit light individually (or singly). Further, among the R, G, and B light-emitting stacks STr, STg, and STb, a light-emitting current is applied to two or more adjacent light-emitting stacks ST, and they can emit light in combination (or by mixing).

[0174] Thus, since the R, G, and B light-emitting stacks STr, STg, and STb constituting the light-emitting diode OD of each sub-pixel SP can emit light individually or in combination, each sub-pixel SP can emit the individual colors of each light-emitting stack ST and the mixed colors of the combined light-emitting stacks ST.

[0175] As a result, each sub-pixel SP is not limited to a light-emitting region of a specific color and can serve as a region that can emit various colors as required, so that the color image expression ability in the light-emitting display device 10 can be maximized.

[0176] Also, since the light-emitting stack ST of each sub-pixel SP can perform both individual light emission and combined light emission, power consumption is reduced and low-potential driving becomes possible.

[0177] Furthermore, in all sub-pixels SP, it is not necessary to provide a corresponding specific color filter pattern, so there is no need to form a color filter layer, and the material cost of the color filter pattern can be saved.

[0178] The planar and cross-sectional structures of the sub-pixels SP in such an embodiment will be described in further detail. On the other hand, for convenience of explanation, in FIG. 8, the first charge generation layer CGL1 and the second charge generation layer CGL2 disposed between the R, G, and B light-emitting stacks ST r, ST g, and ST b are omitted, and FIG. 9, which is an enlarged view of a partial region of FIG. 8, shows a structure in which the first charge generation layer CGL1 and the second charge generation layer CGL2 are disposed.

[0179] Referring to FIGS. 8 and 9 in combination with FIG. 7, in each sub-pixel SP, a sub-pixel driving circuit including thin film transistors T1 to T4 and a light-emitting diode OD can be formed on the substrate 101. On the other hand, although not specifically shown, a plurality of thin film transistors including the plurality of thin film transistors T1 to T4 shown in the figure can be formed in the sub-pixel driving circuit of each sub-pixel SP, and at least one capacitor can also be formed.

[0180] More specifically, a plurality of thin film transistors, for example, first to fourth thin film transistors T1 to T4, can be formed in each sub-pixel SP on the substrate 101.

[0181] For example, the first thin film transistor T1 is connected to the anode 150 of the light-emitting diode OD and can supply the corresponding emission current. The second thin film transistor T2 is connected to the first intermediate electrode IE1 of the light-emitting diode OD and can supply the corresponding emission current. The third thin film transistor T3 is connected to the second intermediate electrode IE2 of the light-emitting diode OD and can supply the corresponding emission current. Further, the fourth thin film transistor T4 is connected to the cathode 169 of the light-emitting diode OD and can supply the corresponding low-potential drive voltage.

[0182] The connection state (i.e., the connection on / off state) between such first to fourth thin film transistors T1 to T4 and the electrodes corresponding thereto can be adjusted, and the driving modes (e.g., individual driving, combined driving, etc.) of the first to third light-emitting stacks ST1 to ST3 can be adjusted.

[0183] For example, when the first and second thin film transistors T1 and T2 are turned on and the third and fourth thin film transistors T3 and T4 are turned off, a path for the light emission current is generated between the anode 150 and the first intermediate electrode IE1, and the R light emission stack STr therebetween can emit light. Further, when the second and third thin film transistors T2 and T3 are turned on and the first and fourth thin film transistors T1 and T4 are turned off, a path for the light emission current is generated between the first intermediate electrode IE1 and the second intermediate electrode IE2, and the G light emission stack STg therebetween can emit light. Further, when the third and fourth thin film transistors T3 and T4 are turned on and the first and second thin film transistors T1 and T2 are turned off, a path for the light emission current is generated between the second intermediate electrode IE2 and the cathode 169, and the B light emission stack STb therebetween can emit light.

[0184] Furthermore, when the first and third thin film transistors T1 and T3 are turned on and the second and fourth thin film transistors T2 and T4 are turned off, a path for the light emission current is generated between the anode 150 and the second intermediate electrode IE2, and the R and G light emission stacks STr and STg therebetween can emit light together. Further, when the second and fourth thin film transistors T2 and T4 are turned on and the first and third thin film transistors T1 and T3 are turned off, a path for the light emission current is generated between the first intermediate electrode IE1 and the cathode 169, and the G and B light emission stacks STg and STb therebetween can emit light together.

[0185] Furthermore, when the first and fourth thin film transistors T1 and T4 are turned on and the second and third thin film transistors T2 and T3 are turned off, a path for the light emission current is generated between the anode 150 and the cathode 169, and the R, G, and B light emission stacks STr, STg, and STb therebetween can emit light together.

[0186] On the other hand, each of the first to fourth thin film transistors T1 to T4 disposed in each sub-pixel SP can include a gate electrode, a source electrode, a drain electrode, and a semiconductor layer.

[0187] Here, the semiconductor layer in each of the first to fourth thin film transistors T1 to T4 can be formed of, for example, amorphous silicon, polycrystalline silicon, or an oxide semiconductor material, but is not limited thereto.

[0188] Also, each of the first to fourth thin film transistors T1 to T4 may have a coplanar structure or an inverted staggered structure.

[0189] A protective layer 135 can be formed as an insulating layer made of an insulating material on the upper part of the thin film transistor T. Such a protective layer 135 may be a single layer film or a multilayer film.

[0190] First to fourth drain contact holes CHd1 to CHd4 for exposing the drain electrodes in each of the first to fourth thin film transistors T1 to T4 can be formed in the protective layer 135.

[0191] An anode 150 can be formed for each sub-pixel SP on the protective layer 135.

[0192] Such an anode 150 can be in contact with the drain electrode of the first thin film transistor T1 through the first drain contact hole CHd1.

[0193] A bank 160 can be formed along the boundary of each sub-pixel SP (or the boundary between adjacent sub-pixels SP) on the anode 150 and the protective layer 135.

[0194] Such a bank 160 can be formed so as to cover the end portion of the anode 150 disposed in each sub-pixel SP.

[0195] The bank 160 configured as described above can be formed so as to surround the sub-pixels SP substantially along the periphery of each sub-pixel SP, and can have a first opening OP1 therein. Through such a first opening OP, the anode 150 of each sub-pixel SP can be in an exposed state at the top.

[0196] On the bank 160, a partition wall MOH having an overhang structure can be formed. Such a partition wall MOH can function to separate the components of the light-emitting diode OD.

[0197] In the above-described first embodiment, as shown in FIGS. 2 and 3, the partition wall OH having a single-stage overhang structure can be formed to extend along the boundaries on both sides of the B sub-pixel SPb.

[0198] In contrast, in this embodiment, a partition wall MOH having a multi-stage (or multiple-stage) overhang structure can be formed to surround the periphery of each sub-pixel SP along the boundary of each sub-pixel SP. Here, in this embodiment, for the sake of convenience of explanation, a partition wall MOH having a three-stage overhang structure will be taken as an example.

[0199] The partition wall MOH having a three-stage overhang structure can be formed on the bank 160 and can have a second opening OP2 corresponding to the first opening OP1 of the bank 160.

[0200] Such a partition wall MOH can include a first partition wall MOH1 having an overhang structure laminated on the bank 160, a second partition wall MOH2 having an overhang structure laminated on the first partition wall MOH1, and a third partition wall MOH3 having an overhang structure laminated on the second partition wall MOH2.

[0201] The overall shape of such first to third partition walls MOH1 to MOH3 (that is, the overall shape of the partition wall MOH) can be a three-stage overhang structure that becomes wider upward.

[0202] For example, the first partition wall MOH1 that constitutes the first-stage overhang structure may include a first part (or first-1 part) MOH1_1 and a second part (or first-2 part) MOH1_2 that is located on the first part MOH1_1 and has a larger size (or width, or area) than the first part MOH1_1.

[0203] In this way, the first partition wall MOH1, which is a structure composed of the combination of the first part MOH1_1 and the second part MOH1_2 having a wider width and protruding outward, can form an overhang structure. Thereby, the second part MOH1_2 can have a first protrusion PP1 that is a part protruding outward from the first part MOH1_1.

[0204] The second partition wall MOH2 that constitutes the second-stage overhang structure may include a first part (or second-1 part) MOH2_1 and a second part (or second-2 part) MOH2_2 that is located on the first part MOH2_1 and has a larger size (or width, or area) than the first part MOH2_1.

[0205] In this way, the second partition wall MOH2, which is a structure composed of the combination of the first part MOH2_1 and the second part MOH2_2 having a wider width and protruding outward, can form an overhang structure. Thereby, the second part MOH2_2 can have a second protrusion PP2 that is a part protruding outward from the first part MOH2_1.

[0206] Here, the second protrusion PP2 of the second part MOH2_2 of the second partition wall MOH2 can extend further outward and protrude more than the first protrusion PP1 of the second part MOH1_2 of the first partition wall MOH1 below it.

[0207] On the other hand, the first part MOH2_1 of the second partition wall MOH2 can have the same or a larger width than the first part MOH1_1 of the first partition wall MOH1.

[0208] The third partition wall MOH3 that constitutes the overhang structure in the third stage includes a first part (or third - 1 part) MOH3_1 and a second part (or third - 2 part) MOH3_2 that is located on the first part MOH3_1 and has a larger size (or width, or area) than the first part MOH3_1.

[0209] In this way, the third partition wall MOH3, which is a structure composed of the combination of the first part MOH3_1 and the second part MOH3_2 with a wider width and protruding outward, can form an overhang structure. Thereby, the second part MOH3_2 can have a third protruding part PP3 that is a part protruding outward from the first part MOH3_1.

[0210] Here, the third protruding part PP3 of the second part MOH3_2 of the third partition wall MOH3 can extend further outward and protrude more than the second protruding part PP2 of the second part MOH2_2 of the second partition wall MOH2 below it.

[0211] On the other hand, the first part MOH3_1 of the third partition wall MOH3 can have the same or a larger width than the first part MOH2_1 of the second partition wall MOH2.

[0212] In this way, the partition walls MOH of the multi - stage overhang structure can be configured such that the width of the overhang structure becomes wider as it goes upward.

[0213] By using the partition walls MOH of such a multi - stage overhang structure, the laminated film constituting the tandem - structured light - emitting diode OD can be physically separated and patterned for each sub - pixel SP.

[0214] On the other hand, on the bank 160 located at the boundary of each sub - pixel SP, similar to the first embodiment, a first connection electrode COE1 connected to the drain electrode of the second thin - film transistor T2 can be formed.

[0215] For example, the first connection electrode COE1 can be formed on the upper surface of the bank 160 and can have a shape that extends toward the inside of each sub-pixel SP, and a part outside the first connection electrode COE1 can remain covered by the first partition wall MOH1 (more specifically, its first portion MOH1_1).

[0216] In this way, the first connection electrode COE1 can be in an exposed state under the first protrusion PP1 of the first partition wall MOH1.

[0217] Such a first connection electrode COE1 can be in contact with the drain electrode of the second thin film transistor T2 through the protective layer 135 and the second drain contact hole CHd2 formed in the bank 160.

[0218] Also, on the upper surface of the first partition wall MOH1 (more specifically, the upper surface of its second portion MOH1_2), a second connection electrode COE2 connected to the drain electrode of the third thin film transistor T3 can be formed in the same manner as the first connection electrode COE1.

[0219] For example, the second connection electrode COE2 can be formed on the upper surface of the first partition wall MOH1 and can have a shape that extends along the first protrusion PP1 toward the inside of each sub-pixel SP, and a part outside the second connection electrode COE2 can remain covered by the second partition wall MOH2 (more specifically, its first portion MOH2_1).

[0220] In this way, the second connection electrode COE2 can be in an exposed state under the second protrusion PP2 of the second partition wall MOH2.

[0221] Such a second connection electrode COE2 can be in contact with the drain electrode of the third thin film transistor T3 through the protective layer 135, the bank 160, and the third drain contact hole CHd3 formed in the first partition wall MOH1.

[0222] Further, on the upper surface of the second partition wall MOH2 (more specifically, the upper surface of its second portion MOH2_2), similar to the first and second connection electrodes COE1 and COE2, a third connection electrode COE3 connected to the drain electrode of the fourth thin film transistor T4 can be formed.

[0223] For example, the third connection electrode COE3 can be formed on the upper surface of the second partition wall MOH2 and extend inwardly along the second protrusion PP2 toward each sub-pixel SP, and a part outside the third connection electrode COE3 can be located covered by the third partition wall MOH3 (more specifically, its first portion MOH3_1).

[0224] In this way, the third connection electrode COE3 can be in an exposed state under the third protrusion PP3 of the third partition wall MOH3.

[0225] Such a third connection electrode COE3 can contact the drain electrode of the fourth thin film transistor T4 through a fourth drain contact hole CHd4 formed in the protective layer 135, the bank 160, the first partition wall MOH1, and the second partition wall MOH2.

[0226] In this way, on the substrate 101 on which the partition walls MOH and the connection electrodes COE1 to COE3 are formed, a plurality of laminated films for forming the light emitting diode OD can be deposited, and a tandem structure light emitting diode OD can be formed for each sub-pixel SP.

[0227] For example, the light emitting diode OD can include an R, G, B light emitting stack STr, STg, STb laminated thereon, a cathode 169 laminated on the B light emitting stack STb, a first charge generation layer CGL1 laminated between the R light emitting stack STr and the G light emitting stack STg, and a second charge generation layer CGL2 laminated between the G light emitting stack STg and the B light emitting stack STb. Also, a first intermediate electrode IE1 can be formed between the first charge generation layer CGL1 and the G light emitting stack STg, and a second intermediate electrode IE2 can be formed between the second charge generation layer CGL2 and the B light emitting stack STb.

[0228] The stacked film constituting the light-emitting diode OD in this way can be made into a structure separated for each sub-pixel SP by the partition wall MOH.

[0229] Regarding this, the R light-emitting stack STr can be separated with the partition wall MOH interposed therebetween. Therefore, the corresponding R light-emitting stack STr can be formed on the anode 150 and the bank 160 of each sub-pixel SP.

[0230] Here, the R light-emitting stack STr can be formed so as to expose at least a part of the first connection electrode COE1 located under the partition wall MOH (more specifically, under the first protrusion PP1 of the first partition wall MOH1). In this embodiment, a case where the R light-emitting stack STr is formed so as to cover the end portion of the first connection electrode COE1 is taken as an example.

[0231] Thereby, in a state where the R light-emitting stack STr is formed by vapor deposition, the first connection electrode COE1 can be in an exposed state between the R light-emitting stack STr and the first partition wall MOH1.

[0232] The first charge generation layer CGL1 on the R light-emitting stack STr can also be formed in substantially the same shape as the R light-emitting stack STr.

[0233] The first intermediate electrode IE1 on the first charge generation layer CGL1 can be formed so as to be separated for each sub-pixel SP by the partition wall MOH, similar to the R light-emitting stack STr and the first charge generation layer CGL1.

[0234] Here, the first intermediate electrode IE1 is formed with a larger size (or width, or area) than the R light-emitting stack STr and the first charge generation layer CGL1 below it, and can be in a shape that extends outward while substantially covering the R light-emitting stack STr and the first charge generation layer CGL1.

[0235] Such a first intermediate electrode IE1 extends above the first connection electrode COE1 and can be in contact with the exposed first connection electrode COE1. Thereby, the first intermediate electrode IE1 is electrically connected to the second thin film transistor T2 via the first connection electrode COE1 and can receive the application of a light emission current.

[0236] On the first intermediate electrode IE1, similar to the R light emission stack STr, the G light emission stack STg can be separated for each sub-pixel SP with the partition wall MOH interposed therebetween.

[0237] Here, the G light emission stack STg can be formed so as to expose at least a part of the second connection electrode COE2 located under the partition wall MOH (more specifically, under the second protruding portion PP2 of the second partition wall MOH2). In this embodiment, a case where the G light emission stack STg is formed so as to cover the end portion of the second connection electrode COE2 will be taken as an example.

[0238] In a state where the G light emission stack STg is formed by vapor deposition, the second connection electrode COE2 can be in an exposed state between the G light emission stack STg and the second partition wall MOH2.

[0239] The second charge generation layer CGL2 on the G light emission stack STg can also be formed in substantially the same shape as the G light emission stack STg.

[0240] The second intermediate electrode IE2 on the second charge generation layer CGL2 can be formed so as to be separated for each sub-pixel SP by the partition wall OH, similar to the G light emission stack STg and the second charge generation layer CGL2.

[0241] Here, the second intermediate electrode IE2 is formed with a larger size (or width, or area) than the G light emission stack STg and the second charge generation layer CGL2 below it, and can extend outward while substantially covering the G light emission stack STg and the second charge generation layer CGL2.

[0242] Such a second intermediate electrode IE2 extends above the second connection electrode COE2 and can contact the exposed second connection electrode COE2. Thereby, the second intermediate electrode IE2 is electrically connected to the third thin film transistor T3 via the second connection electrode COE2 and can receive the application of a light emission current.

[0243] On the second intermediate electrode IE2, similar to the R light emission stack STr and the G light emission stack STg, the B light emission stack STb can be separated for each sub-pixel SP with the partition wall MOH interposed therebetween.

[0244] Here, the B light emission stack STb can be formed so as to expose at least a part of the third connection electrode COE3 located under the partition wall MOH (more specifically, under the third protrusion PP3 of the third partition wall MOH3). In this embodiment, a case where the B light emission stack STb is formed to cover the end portion of the third connection electrode COE3 is taken as an example.

[0245] In a state where the B light emission stack STb is formed by vapor deposition, the third connection electrode COE3 can be in an exposed state between the B light emission stack STb and the third partition wall MOH3.

[0246] The cathode 169 on the B light emission stack STb can be formed so as to be separated for each sub-pixel SP by the partition wall OH, similar to the B light emission stack STb.

[0247] Here, the cathode 169 can be formed with a size (or width, or area) larger than that of the underlying B light emission stack STb and can extend outward while substantially covering the B light emission stack STb.

[0248] Such a cathode 169 extends above the third connection electrode COE3 and can contact the exposed third connection electrode COE3. Thereby, the cathode 169 is electrically connected to the fourth thin film transistor T4 via the third connection electrode COE3 and can receive the application of a low potential drive voltage.

[0249] In this way, when depositing these electrodes IE1, IE2, 169, the deposition can be performed at an angle smaller than that of the underlying stacked film so that the areas of the first intermediate electrode IE1, the second intermediate electrode IE2, and the cathode 169 can be made larger than the area of the stacked film formed thereunder.

[0250] On the other hand, the thicknesses of the R light-emitting stack STr, the G light-emitting stack STg, the B light-emitting stack STb, and the first charge generation layer CGL1 and the second charge generation layer CGL2 can be set so that stable connection to the second connection electrode COE2 and the third connection electrode COE3 corresponding to the second intermediate electrode IE2 and the cathode 169 can be achieved.

[0251] For example, the thicknesses of the second charge generation layer CGL2 laminated under the second intermediate electrode IE2 and the underlying G light-emitting stack STg, R light-emitting stack STr, and first charge generation layer CGL1 can be set such that the height of the upper surface of the second charge generation layer CGL2 (or the G light-emitting stack STg) corresponds to the height of the upper surface of the first partition MOH1 (or is equal to or higher than the height of the upper surface of the first partition MOH1). In this case, the second intermediate electrode IE2 laminated on the second charge generation layer CGL2 extends above the second connection electrode COE2 formed on the upper surface of the first partition MOH1, and a stable contact structure can be realized.

[0252] Similarly, the thickness of the B light-emitting stack STb laminated under the cathode 169 can be set such that the height of the upper surface of the B light-emitting stack STb corresponds to the height of the upper surface of the second partition MOH2 (or is equal to or higher than the height of the upper surface of the second partition MOH2). In this case, the cathode 169 laminated on the B light-emitting stack STb extends above the third connection electrode COE3 formed on the upper surface of the second partition MOH2, and a stable contact structure can be realized.

[0253] In this way, a sealing layer 170 can be formed substantially over the entire surface of the substrate 101 on the cathode 169 separated by the partitions MOH having a three-stage overhang structure.

[0254] The sealing layer 170 can function to improve reliability by blocking the penetration of moisture and oxygen from the outside.

[0255] Unlike the first embodiment, a color filter layer may not be provided on the sealing layer 170. As described above, each sub-pixel SP uses a light-emitting stack ST that can be individually driven, so it is not limited to a light-emitting region of a specific color and can function as a region that can emit various colors as needed. Therefore, in each sub-pixel SP, it is not necessary to form a corresponding specific color filter pattern.

[0256] Therefore, the light-emitting display device 10 of this embodiment may not include a color filter layer.

[0257] On the other hand, an overcoat film (or a transparent film) 180 can be formed on the sealing layer 170. The substrate on which the overcoat film 180 is formed can have a substantially flat surface.

[0258] FIGS. 10 to 12 are diagrams showing examples of various colors that can be realized by sub-pixels using a tandem-structured light-emitting diode according to the third embodiment of the present invention.

[0259] FIG. 10 shows a case where primary colors of red, green, and blue are realized when each of the R light-emitting stack STr, G light-emitting stack STg, and B light-emitting stack STb is individually driven with respect to the light-emitting diode OD of the sub-pixel SP.

[0260] For example, when a light-emitting current path is formed between the anode 150 and the first intermediate electrode IE1 and the R light-emitting stack STr is individually driven, the corresponding red color can emit light and be emitted. Also, when a light-emitting current path is formed between the first intermediate electrode IE1 and the second intermediate electrode IE2 and the G light-emitting stack STg is individually driven, the corresponding green color can emit light and be emitted. Further, when a light-emitting current path is formed between the second intermediate electrode IE2 and the cathode 169 and the B light-emitting stack STb is individually driven, the corresponding blue color can emit light and be emitted.

[0261] FIG. 11 shows a case where yellow and cyan, which are mixed colors, are realized when driving by combining two adjacent ones of the R emission stack STr, the G emission stack STg, and the B emission stack STb with respect to the light-emitting diode OD of the sub-pixel SP.

[0262] For example, when a path of the emission current is formed between the anode 150 and the second intermediate electrode IE2 and the R emission stack STr and the G emission stack STg are driven together, yellow, which is a mixed color of red and green, can be emitted and output. Further, when a path of the emission current is formed between the first intermediate electrode IE1 and the cathode 169 and the G emission stack STg and the B emission stack STb are driven together, cyan, which is a mixed color of green and blue, can be emitted and output.

[0263] FIG. 12 shows a case where white, which is a mixed color, is realized when driving by combining all of the R emission stack STr, the G emission stack STg, and the B emission stack STb with respect to the light-emitting diode OD of the sub-pixel SP.

[0264] For example, when a path of the emission current is formed between the anode 150 and the cathode 169 and the R emission stack STr, the G emission stack STg, and the B emission stack STb are driven together, white, which is a mixed color of red, green, and blue, can be emitted and output.

[0265] As described above, according to the embodiment of the present invention, when using the tandem-structured light-emitting diode, the first emission stack, the second emission stack that emit blue and yellow light, and the intermediate electrode disposed therebetween are separated by the partition wall of the overhang structure disposed along the boundaries on both sides of the B sub-pixel, and the intermediate electrode of the B sub-pixel can be configured to receive the application of the drive current individually.

[0266] As a result, in the B sub-pixel, the second light-emitting stack can be individually driven to emit blue light without driving the first light-emitting stack, thereby reducing power consumption and enabling low-power driving. Further, since there is no need to form a blue color filter pattern in the B sub-pixel, the material cost of the color filter pattern can be reduced.

[0267] Further, according to an embodiment of the present invention, when using a tandem-structured light-emitting diode, a first light-emitting stack, a second light-emitting stack, and a third light-emitting stack that constitute the light-emitting diode and emit red, green, and blue light, and a first intermediate electrode and a second intermediate electrode disposed therebetween are separated for each sub-pixel by partition walls of a multi-stage overhang structure disposed around the sub-pixel, and the first intermediate electrode, the second intermediate electrode, and the cathode can be configured to receive an applied driving current individually.

[0268] As a result, in each sub-pixel, the first light-emitting stack, the second light-emitting stack, and the third light-emitting stack can be individually driven and combinedly driven, thereby reducing power consumption and enabling low-power driving.

[0269] Further, each sub-pixel is not limited to a light-emitting region of a specific color and can function as a region capable of emitting various colors as needed, so that the color representation ability of the light-emitting display device can be maximized. Furthermore, since there is no need to form a corresponding specific color filter pattern in all sub-pixels, there is no need to form a color filter layer, and the material cost of the color filter pattern can be maximally reduced.

[0270] As described above, the embodiments of the present invention described above are examples of the present invention and can be variously modified without departing from the spirit and scope of the present invention. Therefore, the present invention includes the claims and modifications of the present invention within the equivalent scope thereof.

Description of Reference Numerals

[0271] 10 Light-emitting display device 101 Substrate 135 Protective layer 150 Anode 160 Bank 169 Cathode 170 Encapsulation layer 180 Overcoat film AA Display area SP Sub-pixel T Thin film transistor OD Light emitting diode ST Light emitting stack ST1 First light emitting stack ST2 Second light emitting stack IE Intermediate electrode COE Connection electrode OH Partition wall OH_1 First part of the partition wall OH_2 Second part of the partition wall PP Protrusion of the second part of the partition wall CF Color filter layer CFr R color filter pattern CFg G color filter pattern CFt Transparent pattern

Claims

1. A substrate defining a display area in which first, second, and third sub-pixels of different colors are arranged; First electrodes disposed on each of the first sub-pixel, the second sub-pixel, and the third sub-pixel; A partition wall having an overhang structure that extends along the boundary between the first sub-pixel and the second sub-pixel and the third sub-pixel and protrudes outward; A connection electrode disposed under the convex portion of the partition wall at the boundary of the first sub-pixel; A first light-emitting stack and a second light-emitting stack laminated on the first electrode of the first sub-pixel, the first electrodes of the second sub-pixel and the third sub-pixel; A charge generation layer between the first light-emitting stack and the second light-emitting stack; A second electrode on the second light-emitting stack; An intermediate electrode separated by the partition wall, disposed in the first sub-pixel, located between the charge generation layer of the first sub-pixel and the second light-emitting stack, and connected to the connection electrode; The first and second light-emitting stacks, the charge generation layer, and the second electrode are separated by the partition wall in a light-emitting display device.

2. Further comprising a color filter layer disposed on the second electrode, The color filter layer corresponds to each of the second sub-pixel and the third sub-pixel and includes a first color filter pattern and a second color filter pattern for generating these colors, and a transparent pattern corresponding to the first sub-pixel. The light-emitting display device according to claim 1.

3. Further comprising a bank disposed along the boundary of each of the first sub-pixel, the second sub-pixel, and the third sub-pixel, The partition wall and the connection electrode are located on the bank at the boundary of the first sub-pixel, The first light-emitting stack of the first sub-pixel is exposed while covering an end portion of the connection electrode, the intermediate electrode extends outside the first light-emitting stack, and is in contact with the exposed connection electrode. The light-emitting display device according to claim 1 or claim 2.

4. The first sub-pixel is provided with a thin film transistor connected to the connection electrode, and each of the second sub-pixel and the third sub-pixel is provided with a thin film transistor connected to the first electrode, In the first sub-pixel, the first light-emitting stack is in a light-off state, and the second light-emitting stack emits light. The light-emitting display device according to claim 1 or claim 2, wherein each of the second sub-pixel and the third sub-pixel emits light when the first light-emitting stack and the second light-emitting stack emit light together.

5. The second electrode of the first sub-pixel, and the second electrodes of the second sub-pixel and the third sub-pixel extend along the partition wall and are connected to a voltage wiring disposed in a non-display region outside the display region, and receive an applied low-potential driving voltage. The light-emitting display device according to claim 1 or claim 2.

6. The light-emitting display device according to claim 1 or claim 2, further comprising a dummy intermediate electrode that is separated from the intermediate electrode by the partition wall, disposed in the second sub-pixel and the third sub-pixel, and is located between the charge generation layer and the second light-emitting stack in the second sub-pixel and the third sub-pixel.

7. The second light-emitting stack includes a second-1 light-emitting stack and a second-2 light-emitting stack on the second-1 light-emitting stack. The light-emitting display device according to claim 1 or claim 2, wherein the first sub-pixel, the second sub-pixel, and the third sub-pixel are blue, red, and green sub-pixels, respectively.

8. The light-emitting display device according to claim 1, wherein the first sub-pixel, the second sub-pixel, and the third sub-pixel are blue, red, and green sub-pixels, respectively.

9. The partition wall is formed to extend in a column direction along a boundary on both sides of the first sub-pixel, and the partition wall is not formed along a boundary between the second sub-pixel and the third sub-pixel. The light-emitting display device according to claim 1.

10. The intermediate electrode is continuously formed along the first sub-pixels arranged in the same column line. The light-emitting display device according to claim 1.

11. A substrate defining a display region in which a plurality of sub-pixels are arranged; A first electrode disposed for each of the sub-pixels; A partition wall including first to third partition walls having an overhang structure each having a first to third convex portion disposed along a boundary of the sub-pixel, laminated upward, and protruding outward; A first connection electrode disposed under the first convex portion of the first partition wall, a second connection electrode disposed on an upper surface of the first convex portion, and a third connection electrode disposed on an upper surface of the second convex portion; A first light-emitting stack, a second light-emitting stack, and a third light-emitting stack that are laminated on the first electrode and emit light of different colors from each other; A second electrode on the third light-emitting stack; a first charge generation layer between the first light-emitting stack and the second light-emitting stack; a second charge generation layer between the second light-emitting stack and the third light-emitting stack; a first intermediate electrode between the first charge generation layer and the second light-emitting stack; a second intermediate electrode between the second charge generation layer and the third light-emitting stack, and the first to third light-emitting stacks, the first and second charge generation layers, the first and second intermediate electrodes, and the second electrode are separated by the partition walls for each sub-pixel; a light-emitting display device in which the first intermediate electrode, the second intermediate electrode, and the second electrode are connected to the first connection electrode, the second connection electrode, and the third connection electrode, respectively.

12. further comprising a bank disposed along the boundary of the sub-pixel, wherein the partition wall and the first connection electrode are located on the bank, the first light-emitting stack is exposed while covering an end portion of the first connection electrode, the first intermediate electrode extends outside the first light-emitting stack, and contacts the exposed first connection electrode. The light-emitting display device according to claim 11.

13. the second light-emitting stack is exposed while covering an end portion of the second connection electrode, the second intermediate electrode extends outside the second light-emitting stack, and contacts the exposed second connection electrode. The light-emitting display device according to claim 11.

14. the third light-emitting stack is exposed while covering an end portion of the third connection electrode, the second electrode extends outside the third light-emitting stack, and contacts the exposed third connection electrode. The light-emitting display device according to claim 11.

15. the height of the upper surface of the second light-emitting stack or the second charge generation layer is equal to or higher than the height of the upper surface of the first partition wall, the height of the upper surface of the third light-emitting stack is equal to or higher than the height of the upper surface of the second partition wall, and each of the heights is a height on the substrate. The light-emitting display device according to claim 11.

16. the sub-pixel is provided with a first thin-film transistor to a fourth thin-film transistor respectively connected to the first electrode and the first connection electrode to the third connection electrode. The light-emitting display device according to claim 11.

17. the first to third light-emitting stacks emit light individually or two or more of them emit light together. The light-emitting display device according to claim 11.

18. The light-emitting display device according to claim 11, wherein the first light-emitting stack to the third light-emitting stack are different light-emitting stacks from among red, green, and blue light-emitting stacks.

19. The light-emitting display device according to claim 11, wherein the second convex portion extends and protrudes further outward than the first convex portion, and the third convex portion extends and protrudes further outward than the second convex portion.

Images