Light emitting device

Abstract

To provide a lighting emitting device capable of observing a state of a back side when light is not emitted, a lighting device, or a display device or the like.SOLUTION: A light emitting device has a plurality of light emitting units, and a region other than the light emitting unit has a region that transmits visible light. Alternatively, the light emitting device has a light transmitting unit that transmits a plurality of visible light, and a light emitting unit capable of emitting light in a region other than the light transmitting unit. When light is not emitted, it is possible to visually recognize a state of a back side of the light emitting device via a region that transmits visible light. When light is emitted, it is possible to make it difficult to visually recognize the state on the back side of the light emitting device by diffusion of light emitted from the light emitting unit.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One aspect of the present invention relates to a product, a method, or a manufacturing method. Process, machine, manufacture, or composition of matter One embodiment of the present invention is a semiconductor device, a light-emitting device, an electronic device, a lighting device, and a manufacturing method thereof. In particular, one aspect of the present invention relates to an organic electroluminescent device, Light emission using the electroluminescence (EL) phenomenon The present invention relates to an optical device, a display device, an electronic device, and a method for driving them.

[0002] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. For example, electro-optical devices, light-emitting devices, lighting devices, display devices, semiconductor circuits, transistors, etc. Transistors and electronic devices may include semiconductor devices. [Background technology]

[0003] Research and development of light-emitting elements using organic electroluminescence (also called organic EL elements) is being actively conducted. The basic structure of an organic EL element is a layer containing a light-emitting organic compound (EL layer) between a pair of electrodes. By applying a voltage to this element, a luminescent organic compound It is possible to obtain light emission from objects.

[0004] Since organic EL elements can be formed into a film, it is easy to form large-area elements. It is also highly useful as a surface light source that can be used for lighting and other purposes.

[0005] For example, Patent Document 1 discloses a lighting fixture using an organic EL element. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-130132 Summary of the Invention [Problem to be solved by the invention]

[0007] One embodiment of the present invention aims to provide a novel light-emitting device, a lighting device, a display device, or the like. Alternatively, one embodiment of the present invention is a device that allows observation of the state on the back side when no light is emitted. It is an object of the present invention to provide a light-emitting device, a lighting device, a display device, or the like that can be used. One embodiment of the present invention provides a highly reliable light-emitting device, a lighting device, a display device, or the like. Another object of one embodiment of the present invention is to provide a light-emitting device or a lighting device with low power consumption. Another object of the present invention is to provide a display device or the like. One object is to reduce the size and weight of an optical device, a lighting device, a display device, or the like.

[0008] The description of these problems does not preclude the existence of other problems. It is not necessary for the present invention to solve all of these problems. The above will be made clear from the description, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0009] One embodiment of the present invention has a plurality of light-emitting portions, and regions other than the light-emitting portions are regions that transmit visible light. Alternatively, one embodiment of the present invention is a light-emitting device having a light-transmitting portion that transmits a plurality of rays of visible light. The light-emitting device has a light-emitting portion that can emit light in an area other than the light-transmitting portion. In some cases, the backside of the light-emitting device can be observed through the area that transmits visible light. In addition, when the light is emitted, the back side of the light-emitting device is illuminated by the diffusion of light emitted from the light-emitting part. It is possible to make it unobservable.

[0010] One embodiment of the present invention is a light-emitting device including a light-emitting portion and a plurality of light-transmitting portions, A light emitting device characterized in that it is arranged in a grid pattern and has a function of visually recognizing the light from behind through the light transmitting portion. It is a device.

[0011] Another embodiment of the present invention is a light-emitting device including a light-transmitting portion and a plurality of light-emitting portions, The light-emitting parts are arranged in a matrix, and the light from the backside can be seen through the light-transmitting parts. The light emitting device is characterized by the above.

[0012] Another embodiment of the present invention is a lighting device or a display device including the above light-emitting device. [Effects of the Invention]

[0013] According to one aspect of the present invention, there is provided a light emitting device, a lighting device, and a lighting device which allow observation of the state on the back side when no light is emitted. A lighting device, a display device, or the like can be provided.

[0014] According to one aspect of the present invention, a novel light-emitting device, lighting device, display device, or the like is provided. This can be done.

[0015] The description of these effects does not preclude the existence of other effects. The embodiment does not necessarily have to have all of these effects. , the specification, drawings, claims, etc., and It is possible to extract other effects from the claims and other descriptions. [Brief explanation of the drawings]

[0016] [Figure 1] 1A and 1B illustrate one embodiment of a light-emitting device. [Figure 2] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device. [Figure 3] 1A and 1B illustrate one embodiment of a light-emitting device. [Figure 4] 1A and 1B illustrate one embodiment of a light-emitting device. [Figure 5] 1A and 1B illustrate one embodiment of a light-emitting device. [Figure 6] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device. [Figure 7] 1A and 1B illustrate one embodiment of a light-emitting device. [Figure 8] 1A and 1B illustrate one embodiment of a light-emitting device. [Figure 9] 1A and 1B illustrate one embodiment of a light-emitting device. [Figure 10] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device. [Figure 11] 1A and 1B illustrate one embodiment of a light-emitting device. [Figure 12] 1A and 1B illustrate one embodiment of a light-emitting device. [Figure 13] 1A and 1B are a block diagram and a circuit diagram illustrating one embodiment of a light-emitting device. [Figure 14] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device. [Figure 15] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device. [Figure 16] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device. [Figure 17] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device. [Figure 18] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device. [Figure 19] 1A and 1B illustrate one embodiment of a light-emitting device. [Figure 20]1A and 1B illustrate one embodiment of a light-emitting device. [Figure 21] 1A and 1B illustrate one embodiment of a light-emitting device. [Figure 22] 1A to 1C illustrate a configuration example of a light-emitting element. [Figure 23] 1A and 1B illustrate one embodiment of a lighting device. [Figure 24] 1A to 1C illustrate one embodiment of a display device. [Figure 25] Cs-corrected high-resolution TEM image of a cross section of CAAC-OS, and a schematic cross-sectional diagram of CAAC-OS. [Figure 26] Cs-corrected high-resolution TEM image of the CAAC-OS in the plane. [Figure 27] 10A and 10B illustrate structural analyses of a CAAC-OS and a single-crystal oxide semiconductor by XRD. [Figure 28] Electron diffraction pattern of CAAC-OS. [Figure 29] FIG. 1 shows the change in the crystalline part of an In-Ga-Zn oxide due to electron irradiation. [Figure 30] Schematic diagram illustrating the film formation model of CAAC-OS and nc-OS. [Figure 31] A diagram explaining InGaZnO4 crystals and pellets. [Figure 32] Schematic diagram illustrating a film formation model of CAAC-OS. DETAILED DESCRIPTION OF THE INVENTION

[0017] The embodiments will be described in detail with reference to the drawings. and the present invention is not limited to the above, and the form and details thereof may be changed without departing from the spirit and scope of the present invention. It will be readily apparent to those skilled in the art that various modifications may be made thereto. The present invention is not limited to the following description of the embodiments. In the configuration of the invention, the same parts or parts having similar functions are designated by the same reference numerals in different drawings. These are commonly used between the surfaces, and their repeated explanation will be omitted.

[0018] In each drawing described in this specification, the size of each component, the thickness of a layer, or the area is The figures may be exaggerated or abbreviated for clarity. It is not limited to the rule. It is important to make the drawings easy to understand, especially in plan views (top views) and perspective views. Therefore, descriptions of some components may be omitted.

[0019] In addition, the position, size, range, etc. of each component shown in the drawings are for the purpose of facilitating understanding of the invention. Therefore, the actual location, size, range, etc. may not be shown. The invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings. In the actual manufacturing process, resist masks, etc., may be unintentionally damaged by etching or other processes. However, in order to make it easier to understand, it may be omitted.

[0020] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. It does not indicate any order or ranking such as the order of processes or stacking. In addition, even if a term is not accompanied by an ordinal number in this specification, etc., it is possible to avoid confusion of the constituent elements. To avoid this, ordinal numbers may be used in the claims.

[0021] In addition, the terms "electrode" and "wiring" used in this specification and the like do not limit the functionality of these components. For example, an "electrode" may be used as part of a "wiring." Furthermore, the terms "electrode" and "wiring" are used interchangeably to refer to the plural "electrodes" and "wirings." This also includes cases where the "line" is formed as a single unit.

[0022] In this specification, the terms "above" and "below" refer to the positional relationship of components directly above or below each other. For example, "electrode on insulating layer A" is not limited to being below and in direct contact with the insulating layer A. If the expression is "B", electrode B does not need to be formed directly on insulating layer A, The inclusion of other components between the edge layer A and the electrode B is not excluded.

[0023] The source and drain functions may also be different when using transistors with different polarities or when using circuits When the direction of the current changes during circuit operation, they are interchanged depending on the operating conditions. Therefore, it is difficult to determine which is the source and which is the drain. In this specification, the terms source and drain may be used interchangeably. Let's say.

[0024] In addition, in this specification, "electrically connected" means "something that has some kind of electrical effect." This includes cases where the device is connected via a " is not subject to any particular restrictions as long as it enables the transmission and reception of electrical signals between connected objects. Therefore, even when it is expressed as "electrically connecting," in an actual circuit, In some cases, there are no physical connections and only wires running.

[0025] In this specification, "parallel" means that two straight lines are arranged at an angle of -10° or more and 10° or less. Therefore, it includes the case of -5° or more and 5° or less. "Line" refers to the state in which two straight lines are arranged at an angle between -30° and 30°. "Perpendicular" means that two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, it also includes the case where the angle is between 85° and 95°. This refers to a state in which two straight lines are arranged at an angle of 60° or more and 120° or less.

[0026] In addition, in this specification, when the crystal is a trigonal or rhombohedral crystal, it is expressed as a hexagonal crystal system. .

[0027] In addition, in this specification, when an etching process is performed after a photolithography process, In this case, unless otherwise specified, the resist mask formed in the photolithography process is It shall be removed after the etching process is completed.

[0028] (Embodiment 1) In this embodiment, a light-emitting device 100 according to one embodiment of the present invention will be described with reference to FIGS. 1 to 4. FIG. 1(A) is a plan view of the light emitting device 100. FIG. 1(B) is a plan view of the light emitting device 100. ) is a cross-sectional view of the portion indicated by the dashed dotted lines A1-A2 and A3-A4.

[0029] <Configuration example of light-emitting device> In this embodiment, the light emitting device 100 has a bottom emission structure. The light emitting device 100 includes a plurality of light emitting units 132 arranged in a matrix. In FIG. 1(A), a region in which light-emitting sections 132 arranged in a matrix are formed is shown. is shown as region 130. In region 130, the region where the light emitting portion 132 is not formed is In the region 130, the region where the light emitting portion 132 is not formed is transparent to visible light. It is called Section 131.

[0030] The light emitting device 100 illustrated in this embodiment is made up of a substrate 111 and a substrate 12 via an adhesive layer 120. The light emitting device 100 has a structure in which an electrode 115 is attached to a substrate 111. and a plurality of partition walls 114 are provided on the electrode 115. An EL layer 117 is provided on the EL layer 117, and an electrode 118 is provided on the electrode 118. It has an electrode 119.

[0031] The light-emitting section 132 has a light-emitting element 125. The electrode 115, the EL layer 117, and the electrode 118 The electrodes 115 and EL layer 117, and the EL layer 117 and electrode 118 are in contact with each other. The area functions as a light emitting element 125 .

[0032] A signal for operating the light emitting device 100 is input to the light emitting device 100 via a terminal 141 and a terminal 142. The terminal 141 is electrically connected to the electrode 115, and the terminal 142 is electrically connected to the electrode 116. In the light emitting device 100 exemplified in this embodiment, the electrode 11 A part of the electrode 119 functions as a terminal 142. However, electrodes that function as the terminals 141 and 142 may be formed separately. good.

[0033] In addition, in the region 130 where a plurality of light emitting sections 132 arranged in a matrix are formed, The region where the electrode 118 is not formed functions as a light-transmitting portion 131. In the example, the light transmitting portion 131 is formed in a mesh pattern.

[0034] Light 191 incident on the light emitting device 100 from the substrate 121 side passes through the light transmitting portion 131 and enters the substrate 11 That is, the state of the substrate 121 side is transmitted to the substrate 111 side through the light transmitting portion 131. The light emitting device 100 is a bottom emission light emitting device. Therefore, light 192 emitted from light emitting element 125 is emitted toward substrate 111.

[0035] The light emitting unit 132 emits light 192, causing the light emitting device 100 to function as a lighting device. Furthermore, the light 192 emitted from the light emitting section 132 can be diffused. The light 192 emitted from the light emitting portion 132 interferes with the light 191 incident from the substrate 121. This makes it possible to make the state of the substrate 121 invisible.

[0036] In addition, the ratio of the total area occupied by the light transmitting portion 131 and the light emitting portion 132 (area of the region 130) The percentage of the occupied area of 131 (hereinafter also referred to as "transmittance") is preferably 80% or less, The transmittance is preferably 50% or less, and more preferably 20% or less. On the other hand, if the light transmittance is large, the light emitted from the substrate 121 side can be uniformly emitted. You can see the situation more clearly.

[0037] In addition, in FIG. 1, the distance between the centers of two adjacent light emitting units 132 is defined as a pitch P. If the pitch P is made smaller, the state on the substrate 121 side can be more clearly seen. Furthermore, if the pitch P is made smaller, the light emitting portions 132 can emit light more uniformly. The pitch P is preferably 1 cm or less, more preferably 5 mm or less, and even more preferably 1 mm or less. I wish.

[0038] In addition, the number of light emitting parts 132 per inch is set to 200 or more (200 dpi or more, pitch P Approximately 127 μm or less in terms of pitch P), preferably 300 or more (300 dpi or more, pitch P conversion 80 μm or less), the uniformity of the light emitted from the light emitting portion 132 and the The visibility of the image can be improved.

[0039] In this embodiment, a light emitting device having a bottom emission structure (lower surface emission structure) is For example, a top emission structure (top emission structure) or a dual emission structure It is also possible to make the light emitting device have a double-sided emission structure.

[0040] <Example of manufacturing process for light-emitting device> Next, an example of a manufacturing process of the light emitting device 100 will be described with reference to FIG. ) is a cross-sectional view of the portion indicated by the dashed dotted lines A1-A2 and A3-A4.

[0041] [Regarding the substrate 111 and the substrate 121] The substrates 111 and 121 should have heat resistance sufficient to withstand the subsequent heat treatment. Materials that have a high transmittance and transmit visible light can be used. For example, a glass substrate, a quartz substrate, etc. Furthermore, when an organic resin material such as plastic is used, the light emitting device 1 Flexibility can be imparted to the 00. In addition, a glass substrate having a thickness sufficient to provide flexibility, Alternatively, a quartz substrate or the like may be used.

[0042] The organic resin material that can be used for the substrate 121 and the substrate 111 is polyethylene. Terephthalate resin, polyethylene naphthalate resin, polyacrylonitrile resin, poly Imide resin, polymethyl methacrylate resin, polycarbonate resin, polyethersulfone Polyolefin resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamide resin Examples include mide resin and polyvinyl chloride resin.

[0043] The thermal expansion coefficient of the substrate 121 and the substrate 111 is preferably 30 ppm / K or less, and more preferably 10 ppm / K or less. More preferably, the concentration is 10 ppm / K or less. In advance, a film containing nitrogen and silicon such as silicon nitride or silicon oxynitride, or a film containing aluminum nitride or the like is prepared. A protective film with low water permeability, such as a film containing nitrogen and aluminum, may be formed. The substrate 121 and the substrate 111 are structures in which a fibrous body is impregnated with an organic resin (so-called plastics). (also called repreg) may also be used.

[0044] By using such a substrate, it is possible to provide a display device that is less likely to break. This can provide a lightweight display device. Alternatively, it can provide a display device that is easy to bend. This can be done.

[0045] [Formation of electrode 115] An electrode 115 is formed over a substrate 111 (see FIG. 2A). In the device 100, the electrode 115 is used as an anode. A material having a work function larger than that of the EL layer 117 and having light-transmitting properties, such as tin oxide, is used.

[0046] First, a conductive film for forming the electrode 115 is provided on the substrate 111. CVD methods such as the Zuma CVD method, LPCVD method, metal CVD method, or MOCVD method, The conductive film can be formed by an ALD method, a sputtering method, a vapor deposition method, or the like. When a film is formed using a method that does not use plasma, such as MOCVD, damage to the surface to be formed is minimized. It can be made easier.

[0047] In this embodiment, a conductive film for forming the electrode 115 is formed by sputtering. An indium tin oxide film is formed.

[0048] Next, a resist mask is formed over the conductive film by a photolithography process. The conductive film is partly etched using a resist mask to form the electrode 115. The resist mask can be formed by printing, inkjet printing, or the like. When the film is formed by the jet method, no photomask is used, and therefore the manufacturing cost can be reduced.

[0049] The etching of the conductive film may be performed by dry etching or wet etching, or both. When dry etching is used, the resist mask may be If an ashing process is performed before removing the resist mask, it becomes easier to remove the resist mask using a stripping solution. It can be said that:

[0050] The electrode 115 may be formed by electrolytic plating, printing, ink jet printing, or the like instead of the above-mentioned method. It may be formed by a method such as a method for forming a hole.

[0051] In the light emitting device 100 shown in this embodiment, a part of the electrode 115 is used as a terminal 141. There are.

[0052] [Formation of partition wall 114] Next, a partition 114 is formed over the electrode 115 (see FIG. 2B). For example, the partition wall 114 is formed using an insulating material that transmits light. Silicon, silicon oxynitride, silicon nitride oxide, aluminum oxide, aluminum oxynitride Inorganic materials such as aluminum and aluminum oxide nitride, as well as epoxy resin, acrylic resin, and imide resin The partition wall 114 can be formed using an organic resin material such as It may also be a multi-layer structure in which these are stacked.

[0053] By providing the partition wall 114, it is possible to prevent the light transmitting portion 131 from unintentionally emitting light. do.

[0054] The partition wall 114 is formed by a plasma CVD method, an LPCVD method, a metal CVD method, or an MOCVD method. CVD methods such as ALD, sputtering, vapor deposition, thermal oxidation, coating, and printing. It can be formed by the following.

[0055] First, an insulating film for forming the partition wall 114 is provided over the electrode 115. The insulating film is made of a photosensitive imide resin formed by a coating method. When the partition wall 114 is formed using a material, a resist mask forming process and an etching process are performed. The step can be omitted.

[0056] The partition wall 114 has a side wall that is tapered, stepped, or has a continuous curvature. It is preferable to form the side wall of the partition wall 114 in such a shape. This allows for good coverage of the EL layer 117 and the electrode 118 to be formed later. do.

[0057] [Formation of EL layer 117] Next, the EL layer 117 is formed over the electrode 115 and the partition wall 114 (see FIG. 2C). A part of the EL layer 117 is formed in contact with a part of the electrode 115. This will be explained in the fifth embodiment.

[0058] [Formation of electrode 118] Next, the electrode 118 is formed over the EL layer 117 (see FIG. 2D). Since the electrode 118 is used as a cathode, the electrode 118 can inject electrons into the EL layer 117. It is preferable to form the layer using a material with a small work function. Instead, a layer of alkali metal or alkaline earth metal with a small work function is formed to a thickness of several nanometers. It is formed as a buffer layer, and aluminum (Al), titanium (Ti), tantalum (T a), tungsten (W), molybdenum (Mo), chromium (Cr), magnesium (Mg ), conductive oxide materials such as indium tin oxide, or semiconductor materials The buffer layer may be formed by laminating materials such as alkaline earth metal oxides and halogen compounds. Magnesium carbide or alloys such as magnesium-silver can also be used.

[0059] In this embodiment, a laminate of aluminum and titanium is used as the electrode 118. can be formed by evaporation using a metal mask. In order to facilitate the injection of electrons into the EL layer 117, a thin film having a thickness of 118 is provided between the EL layer 117 and the electrode 118. A few nm of lithium fluoride is formed. The metal mask used in this embodiment is a matrix. First, a metal plate is formed with a plurality of openings arranged in a pattern. by depositing lithium chloride, followed by aluminum, followed by titanium. Then, lithium fluoride and a fluorine-containing compound were applied to the EL layer 117 at positions overlapping the openings of the metal mask. An electrode 118 can be formed.

[0060] [Formation of electrode 119] Next, the electrode 119 is formed over the EL layer 117 and the electrode 118 (see FIG. 2(E)). The electrode 119 can be formed using the same material and method as the electrode 115. The plurality of electrodes 118 are electrically connected by 119. is transmitted to electrode 118 via electrode 119.

[0061] In the light-emitting device 100 shown in this embodiment, a part of the electrode 119 is used as a terminal 142. There are.

[0062] [Bonding the substrate 121] Next, a substrate 121 is formed on the substrate 111 via an adhesive layer 120 (see FIG. 2(F)). The adhesive layer 120 may be a photo-curable adhesive, a reaction-curable adhesive, a thermosetting adhesive, or For example, epoxy resin, acrylic resin, imide, or anaerobic adhesive may be used. Resin, etc. may be used. A desiccant (zeolite, etc.) may be mixed into the adhesive layer 120. The adhesive layer 120 and the substrate 121 are not formed on the terminals 141 and 142. .

[0063] In this manner, the light emitting device 100 can be fabricated.

[0064] <Modification 1 of the Light-Emitting Device> The light emitting device 100 having the bottom emission structure shown in this embodiment is modified to have a top emission structure. The light emitting device 100 may have a split structure.

[0065] The light emitting device 100 with a bottom emission structure is compared with the light emitting device 100 with a top emission structure. In this case, the electrode 115 is formed using a material that has a light reflecting function, and the electrode 118 is formed using a material that has a light reflecting function. The light-emitting device of the top emission structure is formed using a material that has a light-transmitting function. In the device 100, the light 192 emitted from the light emitting element 125 is emitted to the substrate 121 side.

[0066] The electrode 115 and the electrode 118 are not limited to a single layer, and may have a multi-layer structure. For example, when the electrode 115 is used as an anode, the layer in contact with the EL layer 117 is made of indium stannate. The layer is a transparent layer having a work function larger than that of the EL layer 117 such as an oxide. A highly reflective layer (such as aluminum, an alloy containing aluminum, or silver) may be provided. stomach.

[0067] <Modification 2 of the Light-Emitting Device> A microlens array 981 is provided at a position where it overlaps with the light emitting unit 132 on the side where the light 192 is emitted. (See FIG. 3(A)). Also, a light diffusion filter may be provided at a position overlapping with the light emitting section 132. A film 982 may be provided (see FIG. 3B).

[0068] Light 192 is emitted through a microlens array 981 or a light diffusion film 982. This allows the light 192 to be more diffused, thereby making the area 130 more uniformly illuminated. It can be done.

[0069] <Modification 3 of the Light-Emitting Device> As shown in FIG. 4(A), the light emitting device 100 has a touch sensor on the substrate 111 side. The touch sensor may be configured using a conductive layer 991, a conductive layer 993, and the like. An insulating layer 992 is provided between them.

[0070] The conductive layer 991 and / or the conductive layer 993 may be formed of indium tin oxide or indium zinc. It is desirable to use a transparent conductive film such as lead oxide. However, in order to reduce the resistance, 991 and / or the conductive layer 993 may be partially or entirely made of a layer having a low resistance material. For example, aluminum, titanium, chromium, nickel, copper, yttrium, di elemental metals consisting of zinc, molybdenum, silver, tantalum, or tungsten; or The alloy containing this as the main component can be used in a single layer structure or a laminated structure. Metal nanowires may be used as the layer 991 and / or the conductive layer 993. As the metal, silver is suitable. This can reduce the resistance value, The sensitivity of the sensor can be improved.

[0071] The insulating layer 992 may be made of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, Aluminum oxide, aluminum oxynitride, or aluminum oxynitride, etc., can be used as a single layer or The insulating layer 992 is preferably formed in a multi-layer structure. The film can be formed by a method such as a coating method or a printing method.

[0072] 4A shows an example in which a substrate 994 having a touch sensor is provided on the substrate 111 side. However, one aspect of the embodiment of the present invention is not limited to this. It can also be installed on one side.

[0073] The substrate 994 may have the function of an optical film. The transparent plate may have a function such as a polarizing plate or a retardation plate.

[0074] Alternatively, as shown in FIG. 4(B), a touch sensor may be formed directly on the substrate 111.

[0075] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0076] (Embodiment 2) In this embodiment, a light emitting device 150 having a different configuration from the light emitting device 100 will be described with reference to FIG. 5A to 8. FIG. 5A is a plan view of the light emitting device 150. (B) is a cross-sectional view of the area indicated by the dashed lines B1-B2 and B3-B4 in FIG. 5(A). In order to avoid repetition of the same explanation, the present embodiment will mainly focus on the light emitting device 100. The differences will be explained below.

[0077] <Configuration example of light-emitting device> In this embodiment, a light emitting device having a bottom emission structure is exemplified as the light emitting device 150. The light emitting device 150 has light emitting sections 132 arranged in a mesh pattern and light emitting elements 132 arranged in a matrix pattern. The light-transmitting portion 131 has a plurality of light-transmitting portions 131. The light-transmitting portions 131 can transmit visible light. The region where the electrode 118 is not formed functions as a light transmitting portion 131 .

[0078] The light emitting device 150 illustrated in this embodiment is made up of a substrate 111 and a substrate 12 via an adhesive layer 120. The light emitting device 150 has a structure in which an electrode 115 is attached to a substrate 111. The light emitting device has an EL layer 117 on the electrode 115, and an electrode 118 on the EL layer 117. The electrode 118 of the optical device 150 is an electrode 118H extending in the horizontal direction and an electrode 118B extending in the vertical direction. In this embodiment, the electrode 118 is simply referred to as the electrode 118. In this case, either electrode 118H or electrode 118V, or both electrode 118H and Both the electrode and the electrode 118V are shown.

[0079] In the light emitting device 150 exemplified in this embodiment, a part of the electrode 115 is used as a terminal 141. In this example, a part of the electrode 118 functions as a terminal 142. Electrodes that function as the terminal 142 and the electrode 41 may be formed separately.

[0080] As in the light emitting device 100 illustrated in the first embodiment, the light emitting device 150 is The incident light 191 is transmitted to the substrate 111 side through the light transmitting portion 131. Through the light source 31, the state of the substrate 121 side can be observed from the substrate 111 side. Since the device 150 is a light-emitting device with a bottom emission structure, the light emitted from the light-emitting element 125 The reflected light 192 is emitted toward the substrate 111. Since light is emitted in a mesh pattern, the light emission intensity distribution within the region 130 is highly uniform. According to the light emitting device 150 of one embodiment, it is possible to realize an illumination device having a surface light source with good uniformity. This can be done.

[0081] Further, similarly to the light-emitting device 100 illustrated in the first embodiment, the light-transmitting portion 131 and the light-emitting portion 132 The percentage of the area occupied by the light-transmitting portion 131 relative to the total area occupied (hereinafter also referred to as "light transmittance") is preferably 80% or less, more preferably 50% or less, and even more preferably 20% or less. The smaller the light transmittance, the more uniformly the light can be emitted from the region 130. If the angle is large, the state on the substrate 121 side can be more clearly seen.

[0082] 5, the distance between the centers of two adjacent light transmitting portions 131 is defined as a pitch P. If the pitch P is made smaller, the state on the substrate 121 side can be more clearly seen. Furthermore, if the pitch P is made smaller, the light emitting portions 132 can emit light more uniformly. The pitch P is preferably 1 cm or less, more preferably 5 mm or less, and even more preferably 1 mm or less. I wish.

[0083] In addition, the number of light-transmitting portions 131 per inch is set to 200 or more (200 dpi or more, pitch P Approximately 127 μm or less in terms of pitch P), preferably 300 or more (300 dpi or more, pitch P conversion 80 μm or less), the uniformity of the light emitted from the light emitting portion 132 and the The visibility of the image can be improved.

[0084] In addition, a microlens array, a light diffusion film, etc. may be provided at a position overlapping the light emitting section 132. It may be provided.

[0085] In this embodiment, a light emitting device having a bottom emission structure (lower surface emission structure) is For example, a top emission structure (top emission structure) or a dual emission structure It is also possible to make the light emitting device have a double-sided emission structure.

[0086] <Example of manufacturing process for light-emitting device> Next, an example of a manufacturing process of the light emitting device 150 will be described with reference to FIG. ) is a cross-sectional view of the portion indicated by the dashed dotted lines B1-B2 and B3-B4.

[0087] [Regarding the substrate 111 and the substrate 121] The substrates 111 and 121 can be made of the same materials as those in the first embodiment.

[0088] [Formation of electrode 115] An electrode 115 is formed on a substrate 111 (see FIG. 6(A)). It can be formed using the same materials and methods as in 1.

[0089] [Formation of EL layer 117] Next, the EL layer 117 is formed on the electrode 115 (see FIG. 6(B)). The configuration of 7 will be explained in the fifth embodiment.

[0090] [Formation of electrode 118] Next, an electrode 118 is formed on the EL layer 117. The electrode 118 is made of the same material as in the first embodiment. The material and method can be used to form the slits. First, a plurality of openings extending in the transverse direction are formed. Lithium fluoride and aluminum are evaporated through a metal mask to form the electrode 118H. (See FIG. 6(C)). Next, a metal mold having a plurality of openings extending in the vertical direction is formed. Lithium fluoride and aluminum are evaporated through the mask to form the electrode 118V (Figure 6 (See (D).) Therefore, the electrodes 118H and 118V are electrically connected.

[0091] After forming the electrode 118H, the substrate 111 is horizontally moved using the same metal mask. It can also be rotated 90 degrees to form electrode 118V.

[0092] [Bonding the substrate 121] Next, similarly to the first embodiment, a substrate 121 is formed on the substrate 111 via an adhesive layer 120. (See Figure 6(E)).

[0093] In this manner, the light emitting device 150 can be fabricated.

[0094] <Modification 1 of the Light-Emitting Device> The light emitting device 150 having the bottom emission structure shown in this embodiment is modified to have a top emission structure. The light emitting device 150 may have a sectional structure.

[0095] The light emitting device 150 with a bottom emission structure is replaced with the light emitting device 150 with a top emission structure. In this case, the electrode 115 is formed using a material that has a light reflecting function, and the electrode 118 is formed using a material that has a light reflecting function. The light-emitting device of the top emission structure is formed using a material that has a light-transmitting function. In the device 150 , light 192 emitted from the light emitting element 125 is emitted to the substrate 121 side.

[0096] The electrode 115 and the electrode 118 are not limited to a single layer, and may have a multi-layer structure. For example, when the electrode 115 is used as an anode, the layer in contact with the EL layer 117 is made of indium stannate. The layer is a transparent layer having a work function larger than that of the EL layer 117 such as an oxide. A highly reflective layer (such as aluminum, an alloy containing aluminum, or silver) may be provided. stomach.

[0097] <Modification 2 of the Light-Emitting Device> A microlens array 981 is provided at a position where it overlaps with the light emitting unit 132 on the side where the light 192 is emitted. (See FIG. 7(A)). Also, a light diffusion filter may be provided at a position overlapping with the light emitting section 132. A film 982 may be provided (see FIG. 7B).

[0098] Light 192 is emitted through a microlens array 981 or a light diffusion film 982. This allows the light 192 to be more diffused, thereby making the area 130 more uniformly illuminated. It can be done.

[0099] <Modification 3 of the Light-Emitting Device> As shown in FIG. 8(A), the light emitting device 150 has a touch sensor on the substrate 111 side. The touch sensor may be configured using a conductive layer 991, a conductive layer 993, and the like. An insulating layer 992 is provided between them.

[0100] The conductive layer 991 and / or the conductive layer 993 may be formed of indium tin oxide or indium zinc. It is desirable to use a transparent conductive film such as lead oxide. However, in order to reduce the resistance, 991 and / or the conductive layer 993 may be partially or entirely made of a layer having a low resistance material. For example, aluminum, titanium, chromium, nickel, copper, yttrium, di elemental metals consisting of zinc, molybdenum, silver, tantalum, or tungsten; or The alloy containing this as the main component can be used in a single layer structure or a laminated structure. Metal nanowires may be used as the layer 991 and / or the conductive layer 993. As the metal, silver is suitable. This can reduce the resistance value, The sensitivity of the sensor can be improved.

[0101] The insulating layer 992 may be made of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, Aluminum oxide, aluminum oxynitride, or aluminum oxynitride, etc., can be used as a single layer or The insulating layer 992 is preferably formed in a multi-layer structure. The film can be formed by a method such as a coating method or a printing method.

[0102] Although FIG. 8A shows an example in which the touch sensor is provided on the substrate 111 side, One aspect of the embodiment is not limited to this. The touch sensor may be provided on the substrate 121 side. can.

[0103] The substrate 994 may have the function of an optical film. The transparent plate may have a function such as a polarizing plate or a retardation plate.

[0104] Alternatively, as shown in FIG. 8(B), a touch sensor may be formed directly on the substrate 111.

[0105] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0106] (Embodiment 3) In this embodiment, a light emitting device having a different configuration from the light emitting device 100 and the light emitting device 150 is 9 to 11. FIG. 9(A) shows the plan view of the light emitting device 200. 9(B) shows the cross sections indicated by the dashed lines C1-C2 and C3-C4 in FIG. In order to reduce the repetition of the same explanation, The following mainly describes the differences from the light emitting device 100 and the light emitting device 150.

[0107] <Configuration example of light-emitting device> In this embodiment, a light emitting device having a bottom emission structure is exemplified as the light emitting device 200. The light emitting device 200 has a plurality of light emitting sections 132 arranged in a matrix. A) is a region where light emitting portions 132 arranged in a matrix are formed. In the region 130, the region where the light emitting portion 132 is not formed transmits visible light. In the region 130, the region where the light-emitting portion 132 is not formed is called a light-transmitting portion 131.

[0108] The light emitting device 200 illustrated in this embodiment is made up of a substrate 111 and a substrate 12 via an adhesive layer 120. The light emitting device 200 has a structure in which a stripe-shaped substrate 111 is laminated on the substrate 111. The electrode 115 has a plurality of electrodes 115, an EL layer 117 has a plurality of electrodes 115, and an electrode 117 has a plurality of electrodes 115, an EL layer ... 118. Also, a plurality of stripe-shaped electrodes 119 are provided on the electrode 118. In A), an example is shown in which the electrode 115 extends in the vertical direction and the electrode 119 extends in the horizontal direction. The extension directions of the electrodes 115 and 119 are perpendicular to each other.

[0109] The area where the electrode 115 and the electrode 119 overlap functions as a light-emitting portion 132. The light emitting portion 132 is formed in the area where the electrode 115 and the electrode 119 overlap. The area where the electrode 115, the EL layer 117, and the electrode 118 overlap is a light-emitting element. It functions as a child 125.

[0110] A signal for operating the light emitting device 200 is input to the light emitting device 200 via a terminal 141 and a terminal 142. The terminal 141 is electrically connected to the electrode 115, and the terminal 142 is electrically connected to the electrode 116. The light emitting device 200 has a plurality of electrodes 115. Each can be supplied with a different signal or the same signal via terminal 141. The light emitting device 200 has a plurality of electrodes 119, each of which is connected to a terminal 142. Different signals or the same signal can be supplied via the In the illustrated light-emitting device 200, a part of the electrode 115 functions as a terminal 141, and the electrode 11 9 functions as the terminal 142, the terminal 141 and the terminal 142 An electrode that functions as the electrode may be formed separately.

[0111] In addition, in the region 130 where a plurality of light emitting sections 132 arranged in a matrix are formed, The region where the electrode 118 is not formed functions as the light-transmitting portion 131. In the example, the light transmitting portion 131 is formed in a mesh pattern.

[0112] Light 191 incident on light emitting device 200 from the substrate 121 side passes through light transmitting portion 131 and enters substrate 11. That is, the state of the substrate 121 side is transmitted to the substrate 111 side through the light transmitting portion 131. The light emitting device 200 is a bottom emission light emitting device. Therefore, light 192 emitted from light emitting element 125 is emitted toward substrate 111.

[0113] By appropriately selecting each of the plurality of electrodes 115 and the plurality of electrodes 119 and supplying signals to them, Any light emitting element 125 present at the intersection of the electrode 115 and the electrode 119 can be made to emit light at any desired brightness. By turning on or off the plurality of light emitting elements 125 at any desired brightness, As a result, characters and images can be displayed in the area 130. The light device 200 can function not only as an illumination device but also as a display device.

[0114] In addition, the ratio of the total area occupied by the light transmitting portion 131 and the light emitting portion 132 (area of the region 130) The percentage of the occupied area of 131 (hereinafter also referred to as "transmittance") is preferably 80% or less, The transmittance is preferably 50% or less, and more preferably 20% or less. 30 can emit light more uniformly, allowing images with good display quality to be displayed. On the other hand, if the light transmittance is high, the state on the substrate 121 side can be more clearly seen. .

[0115] 9, the distance between the centers of two adjacent light emitting units 132 is defined as a pitch P. If the pitch P is made smaller, the state on the substrate 121 side can be more clearly seen. Furthermore, if the pitch P is made smaller, the light emitting portions 132 can emit light more uniformly. The pitch P is preferably 1 cm or less, more preferably 5 mm or less, and even more preferably 1 mm or less. I wish.

[0116] In addition, the number of light emitting parts 132 per inch is set to 200 or more (200 dpi or more, pitch P Approximately 127 μm or less in terms of pitch P), preferably 300 or more (300 dpi or more, pitch P conversion 80 μm or less), the uniformity of the light emitted from the light emitting portion 132 and the Furthermore, it is possible to improve the visibility of the image. This can be done.

[0117] In addition, a microlens array, a light diffusion film, etc. may be provided at a position overlapping the light emitting section 132. It may be provided.

[0118] In this embodiment, a light emitting device having a bottom emission structure (lower surface emission structure) is For example, a top emission structure (top emission structure) or a dual emission structure It is also possible to make the light emitting device have a double-sided emission structure.

[0119] <Example of manufacturing process for light-emitting device> Next, an example of a manufacturing process of the light emitting device 200 will be described with reference to FIG. 1(A) is a cross-sectional view of the area indicated by the dashed dotted lines C1-C2 and C3-C4.

[0120] [Regarding the substrate 111 and the substrate 121] The substrates 111 and 121 can be made of the same materials as those in the first embodiment.

[0121] [Formation of electrode 115] An electrode 115 is formed on a substrate 111 (see FIG. 10(A)). It can be formed using the same materials and methods as in Embodiment 1.

[0122] [Formation of EL layer 117] Next, the EL layer 117 is formed on the electrode 115 (see FIG. 10(B)). The configuration of 17 will be explained in the fifth embodiment.

[0123] [Formation of electrode 118] Next, an electrode 118 is formed over the EL layer 117 (see FIG. 10C). It can be formed using the same materials and methods as in the first embodiment.

[0124] [Formation of electrode 119] Next, the electrode 119 is formed over the EL layer 117 and the electrode 118 (see FIG. 10(D)). The electrode 119 can be formed using the same material and method as the electrode 115. In addition, the electrodes 118 overlapping with the electrode 119 are electrically connected to each other. During the formation of 119, a portion of the EL layer 117 may be removed.

[0125] In this embodiment, an example is shown in which a part of the electrode 119 functions as the terminal 142. A signal input from terminal 142 is transmitted to electrode 118 via electrode 119.

[0126] [Bonding the substrate 121] Next, similarly to the first embodiment, a substrate 121 is formed on the substrate 111 via an adhesive layer 120. (See Figure 10(E)).

[0127] In this manner, the light emitting device 200 can be fabricated.

[0128] <Modification 1 of the Light-Emitting Device> The light emitting device 200 having the bottom emission structure shown in this embodiment is modified to have a top emission structure. The light emitting device 200 may have a split structure.

[0129] The light emitting device 200 with a bottom emission structure is replaced with the light emitting device 200 with a top emission structure. In this case, the electrode 115 is formed using a material that has a light reflecting function, and the electrode 118 is formed using a material that has a light reflecting function. The light-emitting device of the top emission structure is formed using a material that has a light-transmitting function. In the device 200, the light 192 emitted from the light emitting element 125 is emitted to the substrate 121 side.

[0130] The electrode 115 and the electrode 118 are not limited to a single layer, and may have a multi-layer structure. For example, when the electrode 115 is used as an anode, the layer in contact with the EL layer 117 is made of indium stannate. The layer is a transparent layer having a work function larger than that of the EL layer 117 such as an oxide. A highly reflective layer (such as aluminum, an alloy containing aluminum, or silver) may be provided. stomach.

[0131] <Modification 2 of the Light-Emitting Device> As shown in FIG. 11(A), in the light emitting device 200, a touch sensor is provided on the substrate 111 side. The touch sensor may be formed by using a conductive layer 991, a conductive layer 993, etc. An insulating layer 992 is provided between them.

[0132] The conductive layer 991 and / or the conductive layer 993 may be formed of indium tin oxide or indium zinc. It is desirable to use a transparent conductive film such as lead oxide. However, in order to reduce the resistance, 991 and / or the conductive layer 993 may be partially or entirely made of a layer having a low resistance material. For example, aluminum, titanium, chromium, nickel, copper, yttrium, di elemental metals consisting of zinc, molybdenum, silver, tantalum, or tungsten; or The alloy containing this as the main component can be used in a single layer structure or a laminated structure. Metal nanowires may be used as the layer 991 and / or the conductive layer 993. As the metal, silver is suitable. This can reduce the resistance value, The sensitivity of the sensor can be improved.

[0133] The insulating layer 992 may be made of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, Aluminum oxide, aluminum oxynitride, or aluminum oxynitride, etc., can be used as a single layer or The insulating layer 992 is preferably formed in a multi-layer structure. The film can be formed by a method such as a coating method or a printing method.

[0134] Although FIG. 11A shows an example in which the touch sensor is provided on the substrate 111 side, One aspect of the embodiment is not limited to this. The touch sensor may be provided on the substrate 121 side. It is also possible.

[0135] The substrate 994 may have the function of an optical film. The transparent plate may have a function such as a polarizing plate or a retardation plate.

[0136] Alternatively, as shown in FIG. 11(B), a touch sensor may be formed directly on the substrate 111.

[0137] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0138] (Fourth embodiment) In this embodiment, a light emitting device 200 having a different configuration from the light emitting devices 100 to 200 is used. 12 to 21. FIG. 12(A) shows the structure of the light emitting device 250. The light-emitting device 250 shown in this embodiment includes a display region 231, a driver circuit 232, and a display element 233. 12(A) and a driving circuit 233. FIG. 12(B) shows the part indicated as 231a in FIG. 12(A) is an enlarged view of a part of the display area 231. 1 is a cross-sectional view of the portion indicated by the dashed dotted line D1-D2. Therefore, in this embodiment, the differences from the light emitting devices 100 to 200 will be mainly described. explain.

[0139] <Configuration example of light-emitting device> In this embodiment, the light emitting device 250 has a bottom emission structure. The light emitting device 250 includes a plurality of light emitting units 132 arranged in a matrix. A plurality of light emitting sections 132 are arranged in a matrix in the display area 231. The light-emitting section 132 includes a light-emitting element 115, an EL layer 117, and an electrode 118. Each light emitting element 125 has a transistor 25 for controlling the amount of light emitted by the light emitting element 125. The light emitting section 132 is formed in the display area 231. The non-transparent region includes a region that transmits visible light. The light-emitting device 250 exemplified in this embodiment is an active matrix type light-emitting device. It functions as a trix-type display device.

[0140] The light emitting device 250 also has a terminal electrode 216. The terminal electrode 216 is an anisotropic conductive connection. The terminal electrode 216 is electrically connected to the external electrode 124 via the layer 123. It is electrically connected to the drive circuit 232 and the drive circuit 233 .

[0141] The driving circuit 232 and the driving circuit 233 are configured by a plurality of transistors 252. The driving circuit 232 and the driving circuit 233 convert the signal supplied from the external electrode 124 into a display. The display area 231 has a function of determining which light emitting element 125 is supplied with light.

[0142] The transistor 242 and the transistor 252 are formed by a gate electrode 206, a gate insulating layer 20 7, a semiconductor layer 208, a source electrode 209a, and a drain electrode 209b. The wiring 219 is formed in the same layer as the source electrode 209a and the drain electrode 209b. In addition, an insulating layer 210 is formed over the transistor 242 and the transistor 252. An insulating layer 211 is formed on the insulating layer 210. An electrode 115 is formed on the insulating layer 211. The electrode 115 is formed through an opening formed in the insulating layer 210 and the insulating layer 211. The electrode 115 is electrically connected to the drain electrode 209b. An EL layer 117 and an electrode 118 are formed on the electrode 115 and the partition wall 114. are.

[0143] The light emitting device 250 has a structure in which the substrate 111 and the substrate 121 are bonded together via the adhesive layer 120. It has a structure.

[0144] An insulating layer 205 is formed on the substrate 111 via an adhesive layer 112. 205 is silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, silicon oxide Aluminum, aluminum oxide nitride, or aluminum oxide nitride, etc., can be used in single or multilayer The insulating layer 205 is preferably formed by a method such as sputtering, CVD, thermal oxidation, or coating. It can be formed by fabric method, printing method, or the like.

[0145] The insulating layer 205 functions as a base layer, and prevents the transistor from being separated from the substrate 111, adhesive layer 112, etc. This can prevent or reduce the diffusion of moisture and impurity elements into the transistor and light emitting element.

[0146] The light emitting device 250 illustrated in this embodiment lights up a plurality of light emitting elements 125 at an arbitrary luminance. By turning it off, characters and images can be displayed in the display area 231. Therefore, the light-emitting device 250 described in this embodiment can be used not only as a lighting device but also as a display device. The light emitting device 250 exemplified in this embodiment can also function as the above embodiment. The light-emitting amount of each light-emitting element 125 can be more precisely controlled than in the light-emitting device 200 illustrated in the previous embodiment. It is possible.

[0147] According to one embodiment of the present invention, a display device with high display quality can be realized. According to one embodiment of the present invention, a display device with low power consumption can be provided.

[0148] Furthermore, the percentage of the area occupied by the light-transmitting portion 131 relative to the area occupied by the display region 231 (hereinafter referred to as the “transmitting area”) The light intensity (also referred to as the "light efficiency") is preferably 80% or less, more preferably 50% or less, and more preferably 20% or less. The smaller the light transmittance, the more uniformly the display area 231 can be illuminated. On the other hand, if the light transmittance is high, the substrate The state on the plate 121 side can be seen more clearly.

[0149] 12B, the distance between the centers of two adjacent light emitting units 132 is expressed as a pitch. P. If the pitch P is made smaller, the state on the substrate 121 side can be more clearly seen. Furthermore, by reducing the pitch P, the light emitting portions 132 can emit light more uniformly. The pitch P is preferably 1 cm or less, more preferably 5 mm or less, and 1 mm or less is Even more preferable.

[0150] In addition, the number of light emitting parts 132 per inch is set to 200 or more (200 dpi or more, pitch P Approximately 127 μm or less in terms of pitch P), preferably 300 or more (300 dpi or more, pitch P conversion 80 μm or less), the uniformity of the light emitted from the light emitting portion 132 and the Furthermore, it is possible to improve the visibility of the image. This can be done.

[0151] In addition, a microlens array, a light diffusion film, etc. may be provided at a position overlapping the light emitting section 132. It may be provided.

[0152] In this embodiment, a light emitting device having a bottom emission structure (lower surface emission structure) is For example, a top emission structure (top emission structure) or a dual emission structure It is also possible to make the light emitting device have a double-sided emission structure.

[0153] <Pixel circuit configuration example> Next, a more specific example of the configuration of the light emitting device 250 will be described with reference to FIG. 1A is a block diagram illustrating the configuration of a light emitting device 250. The light emitting device 250 is The display device 230 includes a display area 231, a driving circuit 232, and a driving circuit 233. The driving circuit 232 is The driver circuit 233 functions as, for example, a scanning line driver circuit. It functions as a road.

[0154] The light emitting devices 250 are arranged parallel or approximately parallel to each other and are driven by a driving circuit 232. m scanning lines 135 whose potentials are controlled by the and n signal lines 136 whose potentials are controlled by a driving circuit 233. The display area 231 has a plurality of light-emitting units 132 arranged in a matrix. 232 and the drive circuit 233 may be collectively referred to as a drive circuit unit.

[0155] Each scanning line 135 is arranged in m rows and n columns in the display area 231. The signal lines 1 are electrically connected to the n light-emitting units 132 arranged in any one of the rows. 36 indicates m light-emitting elements 132 arranged in m rows and n columns, which are arranged in any one of the columns. The light source 132 is electrically connected to the optical unit 132. Both m and n are integers of 1 or more.

[0156] [Example of a pixel circuit for a light-emitting display device] FIG. 13B shows a circuit that can be used in the light-emitting section 132 of the display device shown in FIG. 13A. The light-emitting portion 132 shown in FIG. 13B includes a transistor 431 and a capacitor element. The light-emitting element 125 includes a diode 243, a transistor 242, and a light-emitting element 125.

[0157] One of the source electrode and the drain electrode of the transistor 431 is connected to a transistor Further, the transistor 431 is electrically connected to a line (hereinafter referred to as a signal line DL_n). The gate electrode is electrically connected to the wiring (hereinafter referred to as the scanning line GL_m) to which the gate signal is given. is connected to.

[0158] The transistor 431 is turned on or off to connect the node of the data signal 435.

[0159] One of a pair of electrodes of the capacitor 243 is electrically connected to the node 435, and the other is The source electrode and the drain electrode of the transistor 431 are electrically connected to the gate 437. The other of the electrodes is electrically connected to node 435 .

[0160] The capacitor 243 functions as a storage capacitor that stores data written to the node 435. It has.

[0161] One of the source electrode and the drain electrode of the transistor 242 is electrically connected to the potential supply line VL_a. The other end is electrically connected to node 437. The gate electrode of is electrically connected to node 435.

[0162] One of the anode and the cathode of the light emitting element 125 is electrically connected to the potential supply line VL_b. and the other is electrically connected to node 437.

[0163] The light emitting element 125 may be, for example, an organic electroluminescence element (also called an organic EL element). However, the light emitting element 125 is not limited to this, and An inorganic EL element made of an inorganic material may also be used.

[0164] A high power supply potential VDD is applied to one of the potential supply lines VL_a and VL_b. and the other is supplied with a low power supply potential VSS.

[0165] In the display device having the light-emitting section 132 of FIG. 13B, the light-emitting section of each row is driven by a driving circuit 232. 132 is selected in turn, and transistor 431 is turned on to apply the data signal to node 435. Write.

[0166] In the light-emitting unit 132 in which data is written to the node 435, the transistor 431 is turned off. Furthermore, depending on the potential of the data written to the node 435, The amount of current flowing between the source and drain electrodes of the transistor 242 is controlled, and the light-emitting element The elements 125 emit light at a brightness that corresponds to the amount of current flowing through them. You can display images.

[0167] It should be noted that a display element other than the light-emitting element 125 can also be used as the display element. For example, as display elements, liquid crystal elements, electrophoretic elements, electronic ink, electrowetting Microelectromechanical systems (MEMS), digital microcomputers Mirror Device (DMD), DMS (Digital Micro Shutter), IMOD (Infrared Modulation Device) It is also possible to use an interferometry (interference modulation) element.

[0168] <Example of manufacturing process for light-emitting device> Next, an example of a manufacturing process for the light emitting device 100 will be described with reference to FIGS. 12A to 12C are cross-sectional views of the area indicated by the dashed line D1-D2 in FIG. do.

[0169] [Formation of release layer 113] First, a release layer 113 is formed on an element formation substrate 101 (see FIG. 14(A)). The element formation substrate 101 may be a glass substrate, a quartz substrate, a sapphire substrate, or a ceramic substrate. In addition, a heat-resistant substrate that can withstand the processing temperature of this embodiment can be used. A plastic substrate having the same structure may also be used.

[0170] The glass substrate may be made of, for example, aluminosilicate glass or aluminoborosilicate glass. Glass materials such as barium borosilicate glass are used. By adding more BaO, a more practical heat-resistant glass can be obtained. Russ etc. can be used.

[0171] The release layer 113 may be made of tungsten, molybdenum, titanium, tantalum, niobium, nickel, or copper. Baltic, Zirconium, Ruthenium, Rhodium, Palladium, Osmium, Iridium, An element selected from silicon, or an alloy material containing the element, or a chemical compound containing the element The insulating film can be formed by using a composite material. The crystalline structure of the separation layer 113 may be amorphous, microcrystalline, or polycrystalline. The peeling layer 113 may be formed of aluminum oxide, gallium oxide, zinc oxide, or Titanium oxide, indium oxide, indium tin oxide, indium zinc oxide, or In It can also be formed using a metal oxide such as GaZnO (IGZO).

[0172] The peeling layer 113 can be formed by a sputtering method, a CVD method, a coating method, a printing method, or the like. The coating method includes a spin coating method, a droplet ejection method, and a dispense method.

[0173] When the peeling layer 113 is formed as a single layer, it is preferably made of tungsten, molybdenum, or a combination of tungsten and molybdenum. It is preferable to use an alloy material containing molybdenum. Alternatively, the peeling layer 113 may be formed as a single layer. In this case, tungsten oxide or oxynitride, molybdenum oxide or oxide Nitrides, or oxides or oxynitrides of alloys containing tungsten and molybdenum It is preferable that

[0174] The peeling layer 113 may be a layer containing tungsten and a layer containing an oxide of tungsten. When a stacked structure of layers containing tungsten is formed, an oxide insulating layer is formed in contact with the layer containing tungsten. As a result, tungsten oxide is formed at the interface between the tungsten-containing layer and the oxide insulating layer. Alternatively, the surface of the layer containing tungsten may be subjected to a thermal oxidation treatment, an oxygen plating treatment, or the like. The material is treated with a strong oxidizing solution such as ozonated water or ozone water to remove tungsten oxides. A layer containing the metal may be formed.

[0175] In this embodiment, a glass substrate is used as the element formation substrate 101. As a first step, tungsten is formed on the element formation substrate 101 by sputtering.

[0176] [Formation of insulating layer 205] Next, an insulating layer 205 is formed as a base layer over the peeling layer 113 (see FIG. 14A). The insulating layer 205 may be made of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, Aluminum oxide, aluminum oxynitride, or aluminum oxynitride, etc., can be used as a single layer or For example, the insulating layer 205 is preferably formed of a layer of silicon oxide and silicon nitride. It may be a two-layer structure in which the above materials are laminated, or a five-layer structure in which the above materials are combined. The edge layer 205 is formed by using a sputtering method, a CVD method, a thermal oxidation method, a coating method, a printing method, or the like. It is possible to do this.

[0177] The thickness of the insulating layer 205 is 30 nm or more and 500 nm or less, preferably 50 nm or more and 400 nm or less. It is sufficient to set it to m or less.

[0178] The insulating layer 205 prevents the diffusion of impurity elements from the element formation substrate 101, the peeling layer 113, etc. Furthermore, even after the element formation substrate 101 is replaced with the substrate 111, Preventing the diffusion of impurity elements from the substrate 111 or the adhesive layer 112 into the light emitting element 125, or In this embodiment, the insulating layer 205 is formed by plasma CVD. A laminated film of silicon oxynitride with a thickness of 200 nm and silicon nitride oxide with a thickness of 50 nm is used. .

[0179] [Formation of gate electrode 206] Next, a gate electrode 206 is formed on the insulating layer 205 (see FIG. 14(A)). 206 poles are aluminum, chromium, copper, tantalum, titanium, molybdenum, tungsten or an alloy containing the above metal element as a component, or the above metal element It can be formed by using an alloy combining manganese and zirconium. One or more metal elements selected from the above may be used. The insulating film may have a single layer structure or a laminated structure of two or more layers. a single layer structure of aluminum film, a two-layer structure of aluminum film laminated on titanium film, a titanium nitride film on Two-layer structure with titanium film stacked, two-layer structure with tungsten film stacked on titanium nitride film, Two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film, titanium A two-layer structure with a copper film laminated on top of a titanium film and an aluminum film laminated on top of the titanium film. There are also three-layer structures, such as aluminum with a titanium film on top. , selected from tantalum, tungsten, molybdenum, chromium, neodymium, and scandium An alloy film or a nitride film made by combining one or more of these may also be used.

[0180] The gate electrode 206 is made of indium tin oxide, indium oxide containing tungsten oxide. oxide, indium zinc oxide with tungsten oxide, indium oxide with titanium oxide Indium tin oxide, indium zinc oxide, silicon oxide containing titanium oxide A light-transmitting conductive material such as indium tin oxide can also be used. A laminated structure of the above-mentioned light-transmitting conductive material and the above-mentioned metal element may also be used.

[0181] First, a gate electrode is formed on the insulating layer 205 by sputtering, CVD, vapor deposition, or the like. A conductive film to be 206 is laminated, and a resist mask is formed on the conductive film by a photolithography process. Next, a part of the conductive film that will become the gate electrode 206 is etched using a resist mask. Then, etching is performed to form the gate electrode 206. At this time, other wiring and electrodes are also formed at the same time. It is possible.

[0182] The etching of the conductive film may be performed by dry etching or wet etching, or both. When dry etching is used, the resist mask may be If an ashing process is performed before removing the resist mask, it becomes easier to remove the resist mask using a stripping solution. It can be said that:

[0183] The gate electrode 206 may be formed by electrolytic plating, printing, inkjet printing, or the like instead of the above-mentioned method. It may also be formed by a jet method or the like.

[0184] The thickness of the conductive film, i.e., the thickness of the gate electrode 206, is 5 nm or more and 500 nm or less, Preferably, it is 10 nm or more and 300 nm or less, more preferably, it is 10 nm or more and 200 nm or less. be.

[0185] Furthermore, by forming the gate electrode 206 using a conductive material having a light-shielding property, the gate electrode 206 can be protected from external light. This makes it difficult for the light to reach the semiconductor layer 208 from the gate electrode 206 side. As a result, fluctuations in the electrical characteristics of the transistor due to light irradiation can be suppressed.

[0186] [Formation of gate insulating layer 207] Next, the gate insulating layer 207 is formed (see FIG. 14(A)). The gate insulating layer 207 is For example, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide aluminum oxide, a mixture of aluminum oxide and silicon oxide, hafnium oxide, gallium oxide or The layer may be a Ga-Zn metal oxide, silicon nitride, or the like, and may be formed as a laminate or a single layer. .

[0187] The gate insulating layer 207 is made of hafnium silicate (HfSiO x ), nitrogen added Hafnium silicate (HfSi x O y N z ), nitrogen-doped hafnium aluminium Laminate (HfAl x O y N z ), hafnium oxide, yttrium oxide, etc. The use of high-k materials can reduce the gate leakage of transistors. A laminate of carbon and hafnium oxide may also be used.

[0188] The thickness of the gate insulating layer 207 is 5 nm or more and 400 nm or less, and more preferably 10 nm or more. It is preferable to set the thickness to 300 nm or less, and more preferably to set the thickness to 50 nm or more and 250 nm or less.

[0189] The gate insulating layer 207 can be formed by a sputtering method, a CVD method, a vapor deposition method, or the like. .

[0190] The gate insulating layer 207 may be a silicon oxide film, a silicon oxynitride film, or a silicon nitride oxide film. When forming a silicon film, a deposition gas containing silicon and an oxidizing gas are used as source gases. Representative examples of silicon-containing deposition gases include silane, disilane, Examples of oxidizing gases include trisilane, fluorinated silane, etc. Examples of oxidizing gases include oxygen, ozone, and nitrous oxide. , nitrogen dioxide, etc.

[0191] The gate insulating layer 207 is made of a nitride insulating layer and an oxide insulating layer in this order from the gate electrode 206 side. By providing a nitride insulating layer on the gate electrode 206 side, From the gate electrode 206 side, hydrogen, nitrogen, alkali metal, alkaline earth metal, etc. It is possible to prevent the migration of nitrogen, alkali metals, or Alkaline earth metals and the like function as impurity elements in semiconductors. It functions as an impurity element of the conductor. Therefore, the term "impurity" in this specification includes hydrogen, This includes nitrogen, alkali metals, alkaline earth metals, and the like.

[0192] When an oxide semiconductor is used as the semiconductor layer 208, an oxide insulating layer is formed on the semiconductor layer 208 side. By providing the edge layer, the defect level at the interface between the gate insulating layer 207 and the semiconductor layer 208 is reduced. As a result, a transistor with little deterioration in electrical characteristics can be obtained. When an oxide semiconductor is used for the semiconductor layer 208, When an oxide insulating layer containing more oxygen than the oxygen that satisfies the stoichiometric composition is used, Therefore, the defect level at the interface between the gate insulating layer 207 and the semiconductor layer 208 can be further reduced. This is preferable because it is possible.

[0193] When the gate insulating layer 207 is a stack of a nitride insulating layer and an oxide insulating layer as described above, In this case, the nitride insulating layer is preferably thicker than the oxide insulating layer.

[0194] Since the nitride insulating layer has a larger dielectric constant than the oxide insulating layer, the thickness of the gate insulating layer 207 is Even if the thickness is increased, the electric field generated in the gate electrode 206 can be efficiently transmitted to the semiconductor layer 208. In addition, by making the entire gate insulating layer 207 thick, the dielectric strength of the gate insulating layer 207 can be increased. Therefore, the reliability of the light emitting device can be improved.

[0195] The gate insulating layer 207 is made of a first nitride insulating layer having few defects and a second nitride insulating layer having hydrogen blocking properties. A second nitride insulating layer having a high resistance and an oxide insulating layer are stacked in this order from the gate electrode 206 side. The gate insulating layer 207 can have a laminated structure in which a first nitride insulating layer having few defects is formed. By using the layer, the breakdown voltage of the gate insulating layer 207 can be improved. When an oxide semiconductor is used as the conductor layer 208, the gate insulating layer 207 is provided with a hydrogen blocking layer. By providing the second nitride insulating layer with high insulating properties, the gate electrode 206 and the first nitride insulating layer The hydrogen contained in the edge layer can be prevented from migrating to the semiconductor layer 208.

[0196] An example of a method for forming the first nitride insulating layer and the second nitride insulating layer will be described below. By using a plasma CVD method with a mixture of orthogonal, nitrogen, and ammonia gas as the source gas, Then, a silicon nitride film with few defects is formed as the first nitride insulating layer. By switching to a mixture of silane and nitrogen, the hydrogen concentration is low and hydrogen is blocked. A silicon nitride film capable of being formed by this method is deposited as the second nitride insulating layer. By this method, a nitride insulating layer having few defects and a hydrogen blocking property is stacked. A gate insulating layer 207 can also be formed.

[0197] The gate insulating layer 207 is made up of a third nitride insulating layer having high impurity blocking properties and a defect-resistant layer. A first nitride insulating layer with few defects, a second nitride insulating layer with high hydrogen blocking properties, and an oxide The gate electrode 206 may have a laminated structure in which a nitride insulating layer and a nitride insulating layer are laminated in this order from the gate electrode 206 side. The gate insulating layer 207 is provided with a third nitride insulating layer having high impurity blocking properties. Then, hydrogen, nitrogen, alkali metal, alkaline earth metal, etc. are introduced from the gate electrode 206 into the semiconductor. This can prevent the material from migrating to the body layer 208.

[0198] An example of a method for forming the first to third nitride insulating layers will be described below. The plasma CVD method was performed using a mixture of silane, nitrogen, and ammonia as the source gas. A silicon nitride film having high impurity blocking properties is formed as the third nitride insulating layer. Next, by increasing the flow rate of ammonia, a silicon nitride film with fewer defects was obtained. Next, the source gas is switched to a mixed gas of silane and nitrogen. The second silicon nitride film has a low hydrogen concentration and is capable of blocking hydrogen. By using this method, the nitride insulating layer can be formed with few defects and no impurities. The gate insulating layer 207 is formed by stacking a nitride insulating layer having blocking properties. can.

[0199] When a gallium oxide film is formed as the gate insulating layer 207, MOCVD (Metal Organic Chemical Vapor Deposition (OCVD) method It can be formed by

[0200] The semiconductor layer 208 in which the channel of the transistor is formed and the insulating layer containing hafnium oxide are The insulating layer is laminated on the insulating layer containing hafnium oxide, and electrons are injected into the insulating layer containing hafnium oxide. This allows the threshold voltage of the transistor to be changed.

[0201] [Formation of semiconductor layer 208] The semiconductor layer 208 may be formed using an amorphous semiconductor, a microcrystalline semiconductor, a polycrystalline semiconductor, or the like. For example, amorphous silicon or microcrystalline germanium can be used. In addition, compound semiconductors such as silicon carbide, gallium arsenide, oxide semiconductors, and nitride semiconductors, An organic semiconductor or the like can be used.

[0202] The semiconductor layer 208 is formed by a plasma CVD method, an LPCVD method, a metal CVD method, or an MOCVD method. It can be formed by CVD methods such as D method, ALD method, sputtering method, vapor deposition method, etc. The semiconductor layer 208 can be formed by a method that does not use plasma, such as MOCVD. This reduces damage to the surface on which the coating is to be formed.

[0203] The thickness of the semiconductor layer 208 is 3 nm or more and 200 nm or less, preferably 3 nm or more and 100 nm or less. More preferably, the thickness is 3 nm or more and 50 nm or less. As the oxide semiconductor film 08, a 30-nm-thick oxide semiconductor film is formed by a sputtering method.

[0204] Next, a resist mask is formed over the oxide semiconductor film, and an oxide semiconductor film is formed using the resist mask. A part of the semiconductor film is selectively etched to form a semiconductor layer 208. The mask is formed by photolithography, printing, inkjet printing, or the like. When the resist mask is formed by the inkjet method, it is possible to Therefore, manufacturing costs can be reduced.

[0205] The oxide semiconductor film may be etched by either dry etching or wet etching. After the etching of the oxide semiconductor film is completed, the resist mask is removed. (See Figure 14(B)).

[0206] <Structure of oxide semiconductors> The structure of an oxide semiconductor will be described below.

[0207] Oxide semiconductors are classified into, for example, non-single-crystal oxide semiconductors and single-crystal oxide semiconductors. Alternatively, oxide semiconductors can be divided into, for example, crystalline oxide semiconductors and amorphous oxide semiconductors. can be.

[0208] Note that as a non-single-crystal oxide semiconductor, CAAC-OS (C Axis Aligned Crystalline Oxide Semiconductor, polycrystalline oxide Semiconductors, microcrystalline oxide semiconductors, amorphous oxide semiconductors, etc. The materials include single-crystalline oxide semiconductors, CAAC-OS, polycrystalline oxide semiconductors, and microcrystalline oxides. Semiconductors, etc.

[0209] First, let me explain about CAAC-OS.

[0210] CAAC-OS is an oxide semiconductor having multiple crystal parts (also called pellets) aligned along the c-axis. It is a type of conductor.

[0211] Transmission Electron Microscope (TEM) The CAAC-OS bright-field image and diffraction pattern were analyzed by the IR scope. By observing the high-resolution TEM image, multiple pellets can be identified. On the other hand, high-resolution TEM images also clearly show the boundaries between pellets, i.e., grain boundaries. Therefore, CAAC-OS cannot check the boundary. It can be said that the decrease in electron mobility caused by grain boundaries is unlikely to occur.

[0212] For example, as shown in FIG. 25(A), a cross section of the CAAC-OS is taken from a direction substantially parallel to the sample surface. Here, a high-resolution TEM image of the sample is observed. The TEM image is observed using the spherical convergence corrector function. Hereafter, high-resolution TEM images using the differential correction function will be referred to as Cs-corrected high-resolution TEM images. Note that Cs-corrected high-resolution TEM images can be obtained using, for example, an atomic resolution TEM manufactured by JEOL Ltd. This can be done using an analytical electron microscope such as the JEM-ARM200F.

[0213] FIG. 25(B) shows an enlarged Cs-corrected high-resolution TEM image of region (1) in FIG. 25(A). From Figure 25(B), it can be seen that the metal atoms are arranged in layers in the pellet. Each layer of metal atoms is formed on the surface on which the CAAC-OS film is to be formed (also called the surface on which the film is to be formed). The shape reflects the unevenness of the surface, and is aligned parallel to the surface on which the CAAC-OS is formed or the top surface. .

[0214] In Figure 25(B), CAAC-OS has a characteristic atomic arrangement. The characteristic atomic arrangement is shown by auxiliary lines. From Figure 25(B) and Figure 25(C), The size of each pellet is about 1 nm to 3 nm, and the inclination between pellets is It can be seen that the size of the gap caused by the crack is about 0.8 nm. The nanocrystals can also be called nanocrystals (nc).

[0215] Here, from the Cs-corrected high-resolution TEM image, it is clear that the CAAC-OS pellet 5 on the substrate 5120 A schematic representation of the arrangement of 100 would resemble a stack of bricks or blocks. (See Figure 25(D)). The tilt between the pellets observed in Figure 25(C) The area where this occurs corresponds to the area 5161 shown in FIG.

[0216] For example, as shown in FIG. 26(A), the CAAC-OS Observe the Cs-corrected high-resolution TEM image of the plane of area (1) and area (2) in Figure 26(A). The Cs-corrected high-resolution TEM images of the enlarged area (3) are shown in Fig. 26(B) and Fig. 2 26(B), 26(C) and 26(D). The pellets are made by ensuring that the metal atoms are arranged in a triangular, square, or hexagonal shape. However, no regularity is observed in the arrangement of metal atoms between different pellets.

[0217] For example, for CAAC-OS with InGaZnO4 crystals, X-ray diffraction (XRD) Construction by out-of-plane method using a Ray Diffraction (RF) device When structural analysis was performed, a peak appeared at a diffraction angle (2θ) of approximately 31°, as shown in Figure 27(A). This peak is attributed to the (009) plane of the InGaZnO4 crystal. Therefore, the CAAC-OS crystal has a c-axis orientation, and the c-axis is approximately perpendicular to the surface on which the CAAC-OS is formed or the upper surface. You can see that it is pointing in the right direction.

[0218] In addition, the out-of-plane method of CAAC-OS with InGaZnO4 crystals In the structural analysis, in addition to the peak at 2θ around 31°, a peak also appeared at 2θ around 36°. The peak at 2θ around 36° is due to the c-axis orientation in some CAAC-OS. This indicates that the CAAC-OS contains crystals that do not have a peak at 2θ around 31°. It is preferable that the spectrum shows a peak at 2θ of around 36° and that the spectrum does not show a peak at 2θ of around 36°.

[0219] On the other hand, in-plan X-ray irradiation is performed on the CAAC-OS in a direction approximately perpendicular to the c-axis. When structural analysis is performed using the e method, a peak appears at 2θ around 56°. This peak is due to In It is attributed to the (110) plane of the GaZnO4 crystal. In the case of CAAC-OS, 2θ is set to 56 The sample was fixed at approximately 100°, and the analysis was performed while rotating the sample around the normal vector of the sample surface (φ axis). Even if a φ scan is performed, no clear peak appears as shown in Figure 27(B). On the other hand, in the case of a single crystal oxide semiconductor such as InGaZnO4, 2θ is fixed at around 56° and φ When scanned, it is assigned to a crystal plane equivalent to the (110) plane as shown in Figure 27(C). Six peaks are observed. Therefore, from the structural analysis using XRD, CAAC-OS It can be seen that the orientation of the a-axis and b-axis is irregular.

[0220] Next, the In-Ga-Zn oxide CAAC-OS was subjected to a process parallel to the sample surface. Diffraction pattern when an electron beam with a lobe diameter of 300 nm is incident (selected area transmission electron diffraction) ) is shown in FIG. 28(A). From FIG. 28(A), for example, InGaZn The spots caused by the (009) plane of the O4 crystal are confirmed. However, the pellets contained in the CAAC-OS have a c-axis orientation, and the c-axis is aligned with the surface on which the film is formed or the On the other hand, for the same sample, the direction perpendicular to the sample surface is The diffraction pattern when an electron beam with a probe diameter of 300 nm is incident from the direction of the ) is shown. From Figure 28(B), a ring-shaped diffraction pattern is confirmed. Diffraction analysis also revealed that the a-axis and b-axis of the pellets contained in CAAC-OS do not have any orientation. It can be seen that the first ring in Figure 28(B) is the InGaZnO4 crystal. This is thought to be due to the (010) and (100) planes. The second ring is thought to be due to the (110) plane.

[0221] In this way, the c-axis of each pellet (nanocrystal) is approximately perpendicular to the surface on which it is formed or the upper surface. Because of the direction, CAAC-OS is aligned with CANC (C-Axis Aligned It can also be called an oxide semiconductor having nanocrystals.

[0222] CAAC-OS is an oxide semiconductor with a low concentration of impurities. The impurities are hydrogen, carbon, and silicon. Elements other than the main components of oxide semiconductors, such as silicon and transition metal elements. The elements that bond with oxygen more strongly than the metal elements that make up the oxide semiconductor are By removing oxygen from the oxide semiconductor, the atomic arrangement of the oxide semiconductor is disturbed, which causes a decrease in crystallinity. In addition, heavy metals such as iron and nickel, argon, and carbon dioxide have atomic radii (or molecular radii). Because of their large radius, when they are contained inside an oxide semiconductor, they disrupt the atomic arrangement of the oxide semiconductor. Impurities contained in an oxide semiconductor can cause a decrease in crystallinity. This may be a source of loops or carriers.

[0223] In addition, the CAAC-OS is an oxide semiconductor with a low density of defect states. Oxygen vacancies in the body act as carrier traps or trap hydrogen, which can increase the carrier It can be a source of odor.

[0224] In addition, transistors using CAAC-OS show changes in their electrical characteristics when irradiated with visible light or ultraviolet light. The fluctuation is small.

[0225] Next, a microcrystalline oxide semiconductor will be described.

[0226] Microcrystalline oxide semiconductors are regions where crystals can be confirmed in high-resolution TEM images. The microcrystalline oxide semiconductor has a region in which no clear crystal part can be identified. The crystal part contained in the crystal is 1 nm or more and 100 nm or less, or 1 nm or more and 10 nm or less. In particular, microcrystals of 1 nm to 10 nm or 1 nm to 3 nm are often present. The oxide semiconductor having nanocrystals (nc) is called nc-OS. (nanocrystalline oxide semiconductor) In addition, the grain boundaries of nc-OS cannot be clearly identified in high-resolution TEM images. It is possible that the nanocrystals have the same origin as the pellets in CAAC-OS. Therefore, the crystalline part of nc-OS may be referred to as a pellet below.

[0227] nc-OS is a material that can be used in microscopic areas (e.g., areas between 1 nm and 10 nm, especially areas between 1 nm and 3 nm). The atomic arrangement is periodic in the region of less than 100 nm. There is no regularity in the crystal orientation between the dots. Therefore, no orientation is observed throughout the film. Therefore, depending on the analytical method, nc-OS may be indistinguishable from amorphous oxide semiconductors. For example, there is an XRD device that uses X-rays with a diameter larger than that of the pellet for nc-OS. When structural analysis is performed using the out-of-plane method, No peak is detected. Also, for nc-OS, the probe diameter (e.g., When electron diffraction (also called selected area electron diffraction) is performed using an electron beam of, for example, 50 nm or more, On the other hand, for nc-OS, a halo-like diffraction pattern is observed. Nanobeam electron diffraction using an electron beam with a probe diameter close to the pellet size or smaller than the pellet size When nanobeam electron diffraction is performed on nc-OS, spots are observed. In some cases, a bright area that appears circular (ring-shaped) may be observed. When nanobeam electron diffraction is performed on the OS, multiple spots are observed within the ring-shaped region. This may be the case.

[0228] In this way, the crystal orientation of each pellet (nanocrystal) is not regular. nc-OS has NANC (Non-Aligned nanocrystals) It can also be called an oxide semiconductor.

[0229] The nc-OS is an oxide semiconductor with higher order than an amorphous oxide semiconductor. The nc-OS has a lower defect state density than the amorphous oxide semiconductor. There is no regularity in the crystal orientation between different pellets. The defect level density is higher than that of AC-OS.

[0230] Next, the amorphous oxide semiconductor will be described.

[0231] Amorphous oxide semiconductors are oxides in which the atomic arrangement in the film is irregular and there are no crystalline parts. An example is an oxide semiconductor that has an amorphous state, such as quartz.

[0232] In amorphous oxide semiconductors, no crystalline parts can be observed in high-resolution TEM images.

[0233] When structural analysis is performed on amorphous oxide semiconductors using an XRD device, out-of-plane In the analysis by the ane method, no peaks indicating crystal planes are detected. When electron diffraction is performed on the amorphous oxide semiconductor, a halo pattern is observed. However, when nanobeam electron diffraction is performed, no spots are observed, and a halo pattern is observed. can be.

[0234] There are various views on amorphous structures. For example, A structure that does not have a crystal structure is called a completely amorphous structure. Also, the distance between the nearest neighboring atoms or the second nearest neighboring atoms is called A structure that has order but no long-range order is sometimes called an amorphous structure. Therefore, according to the strictest definition, an oxide semiconductor that has even a slight degree of order in its atomic arrangement is called an amorphous semiconductor. Furthermore, at least oxides with long-range order cannot be called semiconductors. The semiconductor cannot be called an amorphous oxide semiconductor. For example, CAAC-OS and nc-OS can be used as amorphous oxide semiconductors or completely amorphous oxides. It cannot be called a compound semiconductor.

[0235] Note that the oxide semiconductor has a structure exhibiting physical properties between those of the nc-OS and the amorphous oxide semiconductor. An oxide semiconductor having such a structure is particularly called an amorphous-like oxide semiconductor. (a-like OS:amorphous-like Oxide Semiconductor It is called a uctor.

[0236] In a-like OS, voids are observed in high-resolution TEM images. In addition, there are cases where crystals can be clearly seen in high-resolution TEM images. and regions where no crystalline portions can be identified.

[0237] The following describes how the influence of electron irradiation varies depending on the structure of the oxide semiconductor.

[0238] a-like OS, nc-OS, and CAAC-OS were prepared. -Ga-Zn oxide.

[0239] First, high-resolution cross-sectional TEM images of each sample are acquired. It can be seen that all of the samples have crystalline parts.

[0240] Furthermore, the size of the crystalline part of each sample is measured. Figure 29 shows the size of the crystalline part (from 22 points) of each sample. This is an example of investigating the change in the average size of the 45 locations. It can be seen that the crystal part grows larger according to the cumulative amount of electron irradiation. As shown in (1) in 29, the size of the particles was about 1.2 nm in the initial stage of TEM observation. The crystal part was exposed to a cumulative irradiation dose of 4.2 × 10 8 e - / nm 2 In the case of On the other hand, the nc-OS and CAAC-OS grow to a size of 1000 nm. The cumulative electron dose from the start of irradiation was 4.2 × 10 8 e - / nm 2 until the It can be seen that there is no change in the size of the crystal part regardless of the cumulative irradiation dose of the electrons. As shown in (2) in Figure 29, the size of the crystal part was 1.0 mm regardless of the TEM observation process. As shown in Figure 29 (3), the TEM observation Regardless of the observation time, the size of the crystals is found to be approximately 2.1 nm.

[0241] In this way, a-like OS can be observed by irradiating it with a small amount of electrons, similar to the level observed by TEM. Crystallization may occur and the growth of crystals may be observed. On the other hand, high-quality nc-OS and In the case of CAAC-OS, crystallization due to minute electron irradiation, such as that observed by TEM, is hardly observed. You can see that it cannot be seen.

[0242] The size of the crystalline parts of a-like OS and nc-OS was measured using high-resolution TEM. For example, InGaZnO4 crystals have a layered structure, and In The unit cell of the InGaZnO4 crystal is: It has three In-O layers and six Ga-Zn-O layers, for a total of nine layers arranged in the c-axis direction. Therefore, the spacing between adjacent layers is determined by the lattice of the (009) plane. The value is approximately the same as the interplanar spacing (also called the d value), and is determined to be 0.29 nm from crystal structure analysis. Therefore, we focused on the lattice fringes in high-resolution TEM images and investigated the In the area where the thickness is between 0.28 nm and 0.30 nm, each lattice fringe is InGaZ. It corresponds to the ab plane of the nO4 crystal.

[0243] In addition, the density of oxide semiconductors may differ depending on the structure. For example, If the composition of a material is known, the density of that material can be determined by comparing it with the density of a single crystal of the same composition. The structure of the oxide semiconductor can be estimated. For example, the density of a single crystal is The density of the OS is 78.6% or more and less than 92.3%. In contrast, the density of the nc-OS and CAAC-OS was 92.3% or more and less than 100%. Note that an oxide semiconductor having a density of less than 78% of the density of a single crystal can be formed by film formation. The body is difficult.

[0244] The above will be explained using a specific example. For example, In:Ga:Zn=1:1:1 [atomic In oxide semiconductors that satisfy the numerical ratio, single crystal InGaZnO4 with a rhombohedral crystal structure Density is 6.357g / cm 3 Therefore, for example, In:Ga:Zn=1:1:1[ In oxide semiconductors that satisfy the atomic ratio, the density of the a-like OS is 5.0 g / cm 3 More than 5.9g / cm 3 For example, In:Ga:Zn=1:1:1 [ In oxide semiconductors that satisfy the [number of atoms / atoms ratio], the density of the nc-OS and the density of the CAAC-OS are is 5.9g / cm3 More than 6.3g / cm 3 It will be less than.

[0245] In some cases, single crystals with the same composition do not exist. In such cases, crystals with different compositions at any ratio are used. By combining single crystals, it is possible to calculate the density corresponding to a single crystal of the desired composition. The density of a single crystal of a desired composition can be determined by the ratio of the single crystals of different compositions combined. However, the density should be calculated using as few types of single crystals as possible. It is preferable to calculate them in combination.

[0246] The oxide semiconductor may be, for example, an amorphous oxide semiconductor, an a-like OS, or a microcrystalline oxide semiconductor. The layer may be a laminated film containing two or more of a compound semiconductor and a CAAC-OS.

[0247] Oxide semiconductors with low impurity concentrations and low defect state densities (few oxygen vacancies) have carrier Therefore, such an oxide semiconductor can be used as a high-purity intrinsic or The CAAC-OS and nc-OS are essentially high-purity intrinsic oxide semiconductors. The impurity concentration is lower than that of OS-like and amorphous oxide semiconductors, and the density of defect states is lower. That is, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor is likely to be obtained. The transistors using the CAAC-OS or nc-OS have a negative threshold voltage. In addition, the high purity intrinsic or In reality, high-purity intrinsic oxide semiconductors have few carrier traps. Transistors using C-OS or nc-OS have small fluctuations in electrical characteristics and high reliability. The charge trapped in the carrier traps in the oxide semiconductor is It takes a long time to release the charge, and it can behave as if it were a fixed charge. Therefore, a transistor using an oxide semiconductor with a high impurity concentration and a high density of defect states has a low The electrical characteristics may become unstable.

[0248] <Film formation model> An example of a film formation model for CAAC-OS and nc-OS will be described below.

[0249] FIG. 30(A) shows how a CAAC-OS film is formed by sputtering. FIG.

[0250] The target 5130 is glued to a backing plate (not shown). A number of magnets are placed opposite the target 5130 via the plate. A magnetic field is generated by the multiple magnets. Film formation is performed using the magnetic field of the magnets. A sputtering method that increases the rate is called magnetron sputtering.

[0251] The target 5130 has a polycrystalline structure, and each grain contains a cleavage plane.

[0252] As an example, the cleavage surface of a target 5130 having In-Ga-Zn oxide is described. FIG. 31(A) shows the crystal structure of InGaZnO4 contained in the target 5130. In addition, in FIG. 31(A), the c-axis is directed upward, and the InGaZnO This is the structure of the crystal of 4.

[0253] As shown in Figure 31(A), the oxide in each of the two adjacent Ga-Zn-O layers is It can be seen that the atoms are arranged close to each other. As a result, two adjacent Ga-Zn-O layers repel each other. The ZnO4 crystal has a cleavage plane between two adjacent Ga-Zn-O layers.

[0254] The substrate 5120 is disposed facing the target 5130, and the distance between them is d (target The target-substrate distance (TS distance) is preferably 0.01 m or more and 1 m or less. The thickness of the film deposition chamber is set to 0.02m or more and 0.5m or less. Most of the film deposition gas (e.g., oxygen) It is filled with a gas mixture containing hydrogen, argon, or oxygen at a ratio of 5% by volume or more, and The pressure is controlled to be in the range of 0.1 Pa to 100 Pa, preferably in the range of 0.1 Pa to 10 Pa. By applying a voltage above a certain level to the target 5130, discharge begins and plasma is generated. It is noted that a high density plasma region is formed near the target 5130 by the magnetic field. In the high density plasma region, the deposition gas is ionized, and ions 5101 The ions 5101 are, for example, positive ions of oxygen (O + ) and argon cations (A r + ) etc.

[0255] The ions 5101 are accelerated toward the target 5130 by the electric field, and eventually reach the target 5130. At this time, flat or pellet-shaped sputter particles are ejected from the cleavage plane. The pellets 5100a and 5100b are separated and knocked out. 5100a and pellet 5100b are impacted by the impact of ions 5101 into the structure. Distortion may occur.

[0256] The pellet 5100a is a flat or pellet-shaped pellet having a triangular, for example, equilateral triangular, plane. The pellet 5100b has a hexagonal, for example, regular hexagonal, plane. The sputtered particles are in the form of a plate or pellet. Pellet 5100b and other flat or pellet-shaped sputter particles are collectively referred to as pellet 5. The planar shape of the pellet 5100 is not limited to a triangle or a hexagon. For example, a triangle (e.g., an equilateral triangle) may be formed. In some cases, two squares (e.g., a diamond) are joined together to form a rectangle.

[0257] The thickness of the pellet 5100 is determined depending on the type of deposition gas, etc. The reason for this will be described later. It is preferable that the thickness of the pellet 5100 is uniform. Thin pellets are preferable to thick cubes. The thickness of the 5100 is 0.4 nm or more and 1 nm or less, preferably 0.6 nm or more and 0.8 nm or less. For example, the pellet 5100 has a width of 1 nm or more and 3 nm or less, preferably The pellet 5100 is (1) in FIG. 29 described above. For example, the target 51 having In-Ga-Zn oxide corresponds to the initial nucleus described in . When ions 5101 are bombarded onto the Ga-Zn-O layer 30, as shown in FIG. 31(B), A pellet 5100 having three layers, an In-O layer, a Ga-Zn-O layer, and an In-O layer, emerges. FIG. 31(C) shows the structure of the pellet 5100 when observed from a direction parallel to the c-axis. Therefore, the pellet 5100 consists of two Ga-Zn-O layers (pans) and an In- It can also be called a nano-sized sandwich structure having a layer (filler) and a layer (filler).

[0258] The pellet 5100 receives an electrical charge as it passes through the plasma, causing the sides to become negative or positive. The pellet 5100 has oxygen atoms on the side, and the oxygen atoms are negatively charged. In this way, the sides can be charged with the same polarity, The repulsion between the particles occurs, allowing the particles to maintain their flat shape. However, in the case of In-Ga-Zn oxide, the oxygen atoms bonded to the indium atoms are negatively charged. Or, an acid bonded to an indium atom, a gallium atom, or a zinc atom may The atoms may become negatively charged. Also, the pellet 5100 may become It grows by bonding with indium atoms, gallium atoms, zinc atoms, oxygen atoms, etc. The difference in size between (2) and (1) in Figure 29 above is due to the amount of growth in the plasma. Here, when the substrate 5120 is at room temperature, the pellet 5100 is Since the film does not grow, it becomes nc-OS (see Figure 30(B)). Therefore, even if the substrate 5120 has a large area, the nc-OS film can be formed. In order to grow the pellet 5100 in plasma, the growth method in the sputtering method Increasing the film forming power is effective. By increasing the film forming power, the pellet 5100 structure This can stabilize the structure.

[0259] As shown in FIG. 30(A) and FIG. 30(B), for example, a pellet 5100 is It flies through the air like a kite and flutters up onto the substrate 5120. Pellet 51 Because 00 is electrically charged, it approaches an area where other pellets 5100 have already accumulated. Here, on the upper surface of the substrate 5120, a repulsive force is generated. In addition, the substrate 5120 and the target 51 Since a potential difference is applied between the substrate 5120 and the target 5130, Therefore, the pellet 5100 is disposed on the upper surface of the substrate 5120. The magnetic field and the electric current act on the object, creating a force (Lorentz force). This can be understood by the left-hand rule.

[0260] The pellet 5100 has a larger mass than a single atom. In order to move the object, it is important to apply some kind of force from the outside. It is possible that the force is generated by the action of the field and the electric current. In order to increase the The magnetic field is 10 G or more, preferably 20 G or more, more preferably 30 G or more, and more preferably It is preferable to provide an area where the resistance is 50 G or more. The magnetic field parallel to the top surface of the substrate 5120 is 1.5 times stronger than the magnetic field perpendicular to the top surface of the substrate 5120. times or more, preferably two times or more, more preferably three times or more, and even more preferably five times or more. It is a good idea to set up an area for this purpose.

[0261] At this time, the magnet and the substrate 5120 move or rotate relative to each other. Therefore, the direction of the horizontal magnetic field on the upper surface of the substrate 5120 continues to change. On the upper surface of 120, the pellet 5100 is subjected to forces in various directions and moves in various directions. It can be moved.

[0262] Also, when the substrate 5120 is heated as shown in FIG. 30(A), the pellet 5100 The resistance due to friction between the substrate 5120 and the pellets is small. The pellet 5100 glides over the top surface of the substrate 5120. The movement occurs with the flat surface facing the substrate 5120. When the particles reach the side of the pellet 5100, the sides are joined together. The oxygen atom on the side of 0 is released. The released oxygen atom Since the electron vacancies may be filled, the CAAC-OS has a low defect level density. The temperature of the upper surface of 5120 is, for example, 100°C or more and less than 500°C, 150°C or more and less than 450°C. or 170° C. or more and less than 400° C. That is, when the substrate 5120 has a large area, In this case, it is possible to form a CAAC-OS film.

[0263] Furthermore, when the pellet 5100 is heated on the substrate 5120, the atoms are rearranged, and the The structural distortion caused by the collision of the pellet 5101 is relaxed. Pellet 5100 becomes almost single crystal. Even if the 100 is heated after bonding, the pellet 5100 itself hardly expands or contracts. Therefore, the gaps between the pellets 5100 widen, causing defects such as grain boundaries. It does not form depressions or crevasse formation.

[0264] In addition, the CAAC-OS is not made of a single-crystal oxide semiconductor. The aggregates of pellet 5100 (nanocrystals) are arranged like piles of bricks or blocks. In addition, there are no grain boundaries between them. Even if deformation such as shrinkage occurs in CAAC-OS due to heating or bending, local stress Therefore, flexible semiconductors can be The structure of nc-OS is suitable for biomedical devices. The arrangement is like they are stacked in order.

[0265] When the target is sputtered with ions, not only pellets but also zinc oxide etc. fly out. Since zinc oxide is lighter than the pellets, it may reach the top surface of the substrate 5120 first. And, 0.1 nm to 10 nm, 0.2 nm to 5 nm, or 0.5 A zinc oxide layer 5102 having a thickness of 2 nm or more is formed. A cross-sectional schematic diagram is shown in FIG.

[0266] As shown in FIG. 32(A), a pellet 5105a and a pellet Here, the pellets 5105a and 5105b are piled up. The pellets 5105c are arranged so that their sides are in contact with each other. After being deposited on pellet 5105b, the particles slide on pellet 5105b. In another aspect of 5a, a plurality of particles 510 ejected from the target along with zinc oxide. 3 is crystallized by heating the substrate 5120, forming a region 5105a1. The atoms 5103 may include oxygen, zinc, indium, and gallium, among others.

[0267] Then, as shown in FIG. 32(B), the region 5105a1 is assimilated with the pellet 5105a. 5105a2. The pellet 5105c has a side surface similar to that of the pellet 5105a. Place it so that it touches the other side of 05b.

[0268] Next, as shown in FIG. 32(C), a pellet 5105d is further formed on the pellet 5105a2. and pellet 5105b, and then on pellet 5105a2 and pellet 51 It slides on the other side of the pellet 5105c. The pellet 5105e slides over the zinc oxide layer 5102.

[0269] As shown in FIG. 32(D), the pellet 5105d has a side surface similar to that of the pellet 510. The pellet 5105e is placed so that its side faces the pellet. Also, the other side of the pellet 5105d is arranged so as to be in contact with the other side of the pellet 5105c. In the process, a plurality of particles 5103 that fly out from the target together with zinc oxide are deposited on the substrate 512. 0, it crystallizes and forms a region 5105d1.

[0270] As described above, the piled pellets are arranged so that they come into contact with each other, and the particles are formed on the side surfaces of the pellets. As a result of this growth, a CAAC-OS is formed on the substrate 5120. The individual pellets of C-OS are larger than those of nc-OS. The difference in size between (1) and (2) corresponds to the growth after deposition.

[0271] In addition, the gaps between the pellets 5100 become extremely small, so that one large pellet is formed. The large pellets may have a single crystal structure. The size is 10 nm to 200 nm, 15 nm to 100 nm, or Therefore, the channel of the transistor may be When the formation region is smaller than a large pellet, it has a single crystal structure as the channel formation region. In addition, the pellet size is increased, so that the transistor chip size can be increased. Regions having a single crystal structure are used as the channel forming region, source region, and drain region. It may be possible.

[0272] In this way, the channel formation region of the transistor and the like are formed in a region having a single crystal structure. This may improve the frequency characteristics of the transistor.

[0273] Based on the above model, it is considered that the pellet 5100 accumulates on the substrate 5120. Therefore, unlike epitaxial growth, if the surface to be formed does not have a crystalline structure, For example, it is possible to form a CAAC-OS film on the substrate 5120. Even if the structure of the upper surface (surface to be formed) is amorphous (e.g., amorphous silicon oxide), It is possible to form a C-OS film.

[0274] In addition, even if the upper surface of the substrate 5120 on which the formation is to be performed is uneven, the CAAC-OS For example, the pellets 5100 are arranged along the shape of the upper surface of the substrate 5120. If the surface is atomically flat, the pellet 5100 will be placed with the flat surface, which is parallel to the ab plane, facing downwards. When the thickness of the pellet 5100 is uniform, the thickness is uniform, flat, and high. A layer with high crystallinity is formed. Then, the layer is stacked in n stages (n is a natural number). CAAC-OS can be obtained by

[0275] On the other hand, even if the upper surface of the substrate 5120 has unevenness, the CAAC-OS can be easily formed by the pellet 510 The structure is made up of n layers (n is a natural number) of layers in which 0s are arranged along the unevenness. Since the surface 20 has unevenness, gaps tend to occur between the pellets 5100. However, there is an intermolecular force between the pellets, so even if there are irregularities, the The gaps are arranged to be as small as possible. Therefore, even if there are irregularities, high crystallinity is maintained. It can be called CAAC-OS.

[0276] Therefore, CAAC-OS does not require laser crystallization and can be used on large-area glass substrates. Even if there is a problem, uniform film formation is possible.

[0277] Since the CAAC-OS film is formed using this model, the sputtered particles have a small thickness. It is preferable that the sputtered particles are in the form of pellets. However, the surface facing the substrate 5120 may not be uniform, and the thickness and crystal orientation may not be uniform. be.

[0278] The film formation model shown above allows for the formation of highly crystalline films even on a surface with an amorphous structure. A CAAC-OS having the formula:

[0279] [Formation of source electrode 209a, drain electrode 209b, etc.] Next, the source electrode 209a, the drain electrode 209b, the wiring 219, and the terminal electrode 216 First, a conductive layer is formed on the gate insulating layer 207 and the semiconductor layer 208 (see FIG. 14(C)). A conductive film is formed.

[0280] Conductive films include aluminum, titanium, chromium, nickel, copper, yttrium, and zirconium. elemental metals consisting of tungsten, molybdenum, silver, tantalum, or tungsten, or The alloy mainly composed of silicon can be used in a single layer structure or a laminated structure. a single-layer structure of an aluminum film containing titanium; a two-layer structure of an aluminum film laminated on a titanium film; Two-layer structure with aluminum film laminated on copper-magnesium-aluminum film Two-layer structure with copper film laminated on alloy film, two-layer structure with copper film laminated on titanium film, tungsten A two-layer structure in which a copper film is laminated on a titanium film or titanium nitride film, and the titanium film or An aluminum film or copper film is laminated on the titanium nitride film, and then a titanium film or copper film is laminated on top of that. a three-layer structure in which a molybdenum film or a titanium nitride film is formed, a molybdenum film or a molybdenum nitride film, and the molybdenum film or the molybdenum nitride film. An aluminum film or a copper film is laminated on the molybdenum film or the molybdenum nitride film, and further A three-layer structure in which a molybdenum film or a molybdenum nitride film is formed on the tungsten film. There is also a three-layer structure in which a copper film is laminated on top of the tungsten film.

[0281] In addition, indium tin oxide, zinc oxide, indium oxide containing tungsten oxide, acid Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, Indium tin oxide containing titanium, indium zinc oxide, indium with silicon oxide Conductive materials containing oxygen, such as aluminum tin oxide, and those containing nitrogen, such as titanium nitride and tantalum nitride. A conductive material may be used. In addition, a material containing the above-mentioned metal element and a conductive material containing oxygen may be used. It is also possible to use a laminated structure in which the above-mentioned material containing a metal element and It is also possible to use a laminated structure in which a conductive material containing nitrogen is combined. The product of a combination of a material containing an element, a conductive material containing oxygen, and a conductive material containing nitrogen It can also be a layered structure.

[0282] The thickness of the conductive film is preferably 5 nm or more and 500 nm or less, more preferably 10 nm or more and 300 nm or less. nm or less, and more preferably 10 nm or more and 200 nm or less. An indium tin oxide film having a thickness of 300 nm is formed as the film.

[0283] Next, a portion of the conductive film is selectively etched using a resist mask to form a source electrode 20 9a, the drain electrode 209b, the wiring 219, and the terminal electrode 216 (formed in the same layer as this The resist mask is formed by photolithography. The resist mask can be formed by a suitable method such as a drawing method, a printing method, or an ink-jet method. When the inkjet method is used to form the film, no photomask is required, which reduces manufacturing costs. do.

[0284] The etching of the conductive film may be performed by dry etching or wet etching, or both. It should be noted that the etching step removes a part of the exposed semiconductor layer 208. After etching of the conductive film is completed, the resist mask is removed.

[0285] By providing the source electrode 209a and the drain electrode 209b, the transistor 24 2, and transistor 252 is formed.

[0286] [Form an insulating layer] Next, the source electrode 209a, the drain electrode 209b, the wiring 219, and the terminal electrode 216 An insulating layer 210 is formed on the insulating layer 205 (see FIG. 14(D)). It can be formed using the same materials and methods as those described above.

[0287] In addition, when an oxide semiconductor is used for the semiconductor layer 208, at least the semiconductor of the insulating layer 210 It is preferable to use an insulating layer containing oxygen in the region in contact with the layer 208. For example, the insulating layer 2 When the insulating film 10 is a multi-layer laminate, at least the layer in contact with the semiconductor layer 208 is made of silicon oxide. It is sufficient to form it.

[0288] [Formation of opening 128] Next, a portion of the insulating layer 210 is selectively etched using a resist mask to form an opening 12. 8 is formed (see FIG. 14(D)). At this time, other openings (not shown) may also be formed at the same time. The resist mask can be formed by photolithography, printing, inkjet printing, etc. When the resist mask is formed by an ink-jet method, Since no photomask is used, manufacturing costs can be reduced.

[0289] The etching of the insulating layer 210 may be performed by dry etching or wet etching. Both may be used.

[0290] By forming the opening 128, the drain electrode 209b and a part of the terminal electrode 216 are exposed. After the opening 128 is formed, the resist mask is removed.

[0291] [Forming insulating layer 211] Next, an insulating layer 211 is formed on the insulating layer 210 (see FIG. 14(E)). can be formed using the same material and method as the insulating layer 205.

[0292] In addition, in order to reduce the surface irregularities on the surface on which the light emitting element 125 is formed, the insulating layer 211 is subjected to a planarization treatment. The planarization process is not particularly limited, but may be a polishing process (for example, a chemical mechanical polishing process). Polishing method (Chemical Mechanical Polishing: CMP), This can be done by dry etching or etching.

[0293] In addition, by forming the insulating layer 211 using an insulating material having a planarizing function, the polishing process can be performed. The insulating material having a planarizing function may be, for example, a polyimide resin, Organic materials such as acrylic resins can be used. In addition to the above organic materials, low dielectric constant materials can also be used. In addition, insulating layers formed from these materials can be used. The insulating layer 211 may be formed by stacking a plurality of layers.

[0294] Also, a part of the insulating layer 211 in the region overlapping the opening 128 is removed to form an opening 129. (See FIG. 14(E)). At this time, other openings (not shown) can also be formed at the same time. The insulating layer 211 in the region where the external electrode 124 will be connected later is removed. 29, etc., a resist mask is formed on the insulating layer 211 by a photolithography process. The insulating layer 211 can be formed by etching the area not covered by the resist mask. By forming the opening 129, the surface of the drain electrode 209b is exposed.

[0295] In addition, by using a photosensitive material for the insulating layer 211, it is possible to use a resist mask. In this embodiment, a photosensitive acrylic resin is used. The insulating layer 211 and the opening 129 are formed.

[0296] [Formation of electrode 115] Next, the electrode 115 is formed over the insulating layer 211 (see FIG. 15(A)). It is preferable to form the EL layer 117 using a conductive material that transmits the light emitted by the EL layer 117 to be formed later. The electrode 115 is not limited to a single layer, and may have a multi-layer structure. When the electrode 115 is used as an anode, the layer in contact with the EL layer 117 is made of indium tin oxide or the like. The light-transmitting layer 114 may have a work function larger than that of the EL layer 117 and may have light-transmitting properties.

[0297] In this embodiment, a display device having a bottom emission structure (bottom emission structure) is For example, a top emission structure (top emission structure) or a dual emission structure It is also possible to use a display device with a double-sided emission structure.

[0298] The electrode 115 is formed by forming a conductive film to be the electrode 115 on the insulating layer 211 and then forming a resist on the conductive film. A resist mask is formed on the conductive film, and the region not covered with the resist mask is etched. The conductive film can be formed by etching using a dry etching method or a wet etching method. The resist mask is then formed on the substrate. This can be done by photolithography, printing, inkjet printing, etc. When a resist mask is formed by the inkjet method, a photomask is not used, so the manufacturing After the electrode 115 is formed, the resist mask is removed.

[0299] [Formation of partition wall 114] Next, the partition walls 114 are formed (see FIG. 15(B)). 32 to prevent the light emitting elements 125 from accidentally shorting out electrically and emitting light erroneously. In addition, when a metal mask is used to form the EL layer 117 described later, the metal The partition wall 114 also functions to prevent the partition mask from coming into contact with the electrode 115. It is made of organic resin materials such as fat, acrylic resin, and imide resin, and inorganic materials such as silicon oxide. The partition wall 114 may have a side wall that is tapered or has a continuous curvature. It is preferable to form the side wall of the partition wall 114 in such a shape as to form an inclined surface. By forming the insulating layer 111 in this shape, the covering property of the EL layer 117 and the electrode 118 to be formed later can be improved. It is possible.

[0300] [Formation of EL layer 117] Next, the EL layer 117 is formed on the electrode 115 (see FIG. 15(C)). The configuration of 17 will be explained in the fifth embodiment.

[0301] [Formation of electrode 118] Next, an electrode 118 is formed over the EL layer 117 (see FIG. 15C). The electrodes 115 and EL can be formed using the same materials and methods as those in the first embodiment. The layer 117 and the electrode 118 form a light emitting element 125 .

[0302] [Bonding the substrate 121] Next, a substrate 121 is formed on the substrate 111 via an adhesive layer 120 (FIG. 15(D), FIG. 16(A). The adhesive layer 120 may be a photo-curable adhesive, a reaction-curable adhesive, or a heat-curable adhesive. Curing adhesives or anaerobic adhesives can be used. For example, epoxy resins, acrylic The adhesive layer 120 may contain a desiccant (such as zeolite). The substrate 121 is formed so as to face the element formation substrate 101. Therefore, the substrate 121 is sometimes called the "opposing substrate."

[0303] [Peeling the element formation substrate from the insulating layer 205] Next, the element forming substrate 101 that is in contact with the insulating layer 205 via the release layer 113 is removed from the insulating layer 205. The peeling method involves applying mechanical force (human force). (e.g. peeling by hand or with a jig, separating by rotating a roller, ultrasonic, etc.) For example, the peeling layer 113 may be cut with a sharp blade or by laser light irradiation. Make a notch and inject water into the notch. Or spray mist water into the notch. Water seeps into the gap between the release layer 113 and the insulating layer 205 due to capillary action, and the element The formation substrate 101 can be easily peeled off from the insulating layer 205 .

[0304] [Bonding the boards together] Next, the substrate 111 is bonded to the insulating layer 205 via the adhesive layer 112 (FIG. 17(A), See FIG. 17(B). The adhesive layer 112 can be made of the same material as the adhesive layer 120. In this embodiment, the substrate 111 is made of aramid (polyamide resin) having a thickness of 20 μm. is used.

[0305] [Formation of opening 122] Next, the substrate 121 and the adhesive layer 122 in the area overlapping the terminal electrode 216 and the opening 128 are 20 is removed to form an opening 122 (see FIG. 18(A)). As a result, a part of the surface of the terminal electrode 216 is exposed.

[0306] [Forming external electrodes] Next, an anisotropic conductive connection layer 123 is formed in the opening 122, and a light emitting layer is formed on the anisotropic conductive connection layer 123. An external electrode 124 is formed to input power and signals to the optical device 250 (see FIG. 18(B)). The terminal electrode 216 is electrically connected to the external electrode 124 via the anisotropic conductive connection layer 123. The external electrode 124 is, for example, an FPC (Flexible Printed Circuit). ted circuit) can be used.

[0307] The anisotropic conductive connection layer 123 may be made of various anisotropic conductive films (ACFs). Conductive Film) and Anisotropic Conductive Paste (ACP) It can be formed using a tungsten carbide (Tropical Conductive Paste) or the like.

[0308] The anisotropic conductive connection layer 123 is made of a thermosetting resin or a thermosetting and photosetting resin containing conductive particles. The anisotropic conductive connection layer is made by hardening a paste or sheet-like material that has been mixed. The anisotropic conductive connection layer 123 becomes a material that exhibits anisotropic conductivity when irradiated with light or subjected to thermocompression bonding. The conductive particles used in 123 are, for example, spherical organic resin particles coated with Au, Ni, Co, etc. Particles coated with a thin film of metal can be used.

[0309] In this manner, the light emitting device 250 can be fabricated.

[0310] <Modification 1 of the Light-Emitting Device> The light emitting device 250 having the bottom emission structure shown in this embodiment is modified to have a top emission structure. An example of a light emitting device 250 having a split structure will be described with reference to FIG. 19. FIG. 19(B) is a perspective view of a light emitting device 250 having a top emission structure. 19(A) is an enlarged view of a part of the display area 231 indicated as part 231a. 19(C) is a cross-sectional view of the area indicated by the dashed dotted line D3-D4 in FIG. 19(A).

[0311] The light emitting device 250 with a bottom emission structure is replaced with the light emitting device 250 with a top emission structure. In this case, the electrode 115 is formed using a material that has a light reflecting function, and the electrode 118 is formed using a material that has a light reflecting function. is formed using a material that has a function of transmitting light.

[0312] The electrode 115 and the electrode 118 are not limited to a single layer, and may have a multi-layer structure. For example, when the electrode 115 is used as an anode, the layer in contact with the EL layer 117 is made of indium stannate. The layer is a transparent layer having a work function larger than that of the EL layer 117 such as an oxide. A highly reflective layer (such as aluminum, an alloy containing aluminum, or silver) may be provided. stomach.

[0313] Light 191 incident on the light emitting device 250 with a top emission structure from the substrate 111 side is transmitted through the That is, the light is transmitted to the substrate 121 side through the light transmitting portion 131. The state of the first side can be observed from the substrate 121 side.

[0314] Furthermore, light 192 emitted from the light emitting element 125 is emitted toward the substrate 121. Even if a transistor or the like is formed at a position overlapping the light emitting portion 132, the emission of the light 192 is not obstructed. Therefore, the light 192 can be emitted efficiently, and power consumption can be reduced. In addition, circuit design becomes easier, which increases the productivity of light-emitting devices. In addition, the wiring and the like arranged so as to overlap the light transmitting portion 131 are arranged at a position so as to overlap the light emitting portion 132. By placing the transparent portion 131 at the substrate 111 side, the transmittance of the transparent portion 131 can be improved. You can see the situation more clearly.

[0315] <Modification 2 of the Light-Emitting Device> A colored layer is added to the light-emitting device 250 having a top-emission structure to form a top-emission device capable of displaying colors. An example of the configuration for the mission structure light emitting device 250 is shown in FIG. 19(A) is a cross-sectional view of the area indicated by the dashed dotted line D3-D4 in FIG. 19(A).

[0316] The light emitting device 250 having a top emission structure shown in FIG. 20(A) has a colored layer on a substrate 121. The color layer 266 has a light-emitting portion and an overcoat layer 268 that covers the color layer 266. The light 192 is transmitted through the colored layer 266 and is converted into a desired color. For example, in three adjacent light emitting sections 132, the overlapping colored layers are 266 is a red colored layer 266, a green colored layer 266, and a blue colored layer 266. The color layer 266 can be made of various materials. It can be formed by using a printing method, an ink jet method, or a photolithography method. Cut.

[0317] The overcoat layer 268 may be made of, for example, acrylic resin, epoxy resin, polyimide, or the like. An organic insulating layer can be used. By forming the overcoat layer 268, e.g. For example, it is possible to prevent impurities contained in the colored layer 266 from diffusing toward the light emitting element 125. However, the overcoat layer 268 does not necessarily have to be provided. A structure in which the overcoat layer 268 is not formed may also be used.

[0318] Alternatively, a light-transmitting conductive film may be formed as the overcoat layer 268. By providing a light-transmitting conductive film as the coating layer 268, the light emitted from the light-emitting element 125 can be The ionized light 235 can be transmitted through the filter, while the ionized impurities can be prevented from being transmitted through the filter.

[0319] The light-transmitting conductive film may be formed of, for example, indium oxide, indium tin oxide, or indium zinc. The film can be formed using lead oxide, zinc oxide, zinc oxide doped with gallium, or the like. In addition to graphene, a metal film formed thin enough to have light-transmitting properties may also be used.

[0320] In FIG. 20A, the semiconductor layer 20 of the transistor 252 that constitutes the driving circuit 233 2 shows an example in which an electrode 263 is provided in a region overlapping with electrode 2. The gate electrode 63 can be formed using the same material and method as the gate electrode 206 .

[0321] The electrode 263 can function as a gate electrode. When either the electrode 261 or the electrode 262 is simply referred to as a "gate electrode," the other is referred to as a "back gate." In addition, either the gate electrode 206 or the electrode 226 may be referred to as One may be called the "first gate electrode" and the other may be called the "second gate electrode."

[0322] In general, the back gate electrode is formed of a conductive film, and the gate electrode and the back gate electrode form a semiconductor. The back gate electrode is disposed so as to sandwich the channel forming region of the layer. The back gate electrode can be made to function in the same manner as the gate electrode. The potential of the back gate electrode may be changed, or may be set to the GND potential or any other potential. By changing the voltage, the threshold voltage of the transistor can be changed.

[0323] In addition, since the gate electrode and back gate electrode are made of a conductive film, they can be easily The function of preventing the electric field generated from acting on the semiconductor layer where the channel is formed (especially static electricity It also has electrostatic shielding function against

[0324] By providing the gate electrode 206 and the electrode 263 with the semiconductor layer 208 sandwiched between them, By setting the electrode 206 and the electrode 263 at the same potential, the semiconductor layer 208 is electrically connected to the gate electrode 206 from both above and below. Carriers are induced, and the region in which carriers flow in the semiconductor layer 208 becomes larger in the film thickness direction. As a result, the on-current of the transistor increases. As the size increases, the field effect mobility increases.

[0325] The gate electrode 206 and the electrode 263 each have the function of blocking an external electric field. Therefore, the charges present in the layer below the gate electrode 206 and the layer above the electrode 263 are This does not affect the semiconductor layer 208. As a result, stress tests (e.g., applying a negative voltage to the gate) Gate Bias-Temperature (GBT) stress test The change in threshold voltage before and after the +GBT stress test is small. Also, it is necessary to suppress the fluctuation of the on-current rise voltage at different drain voltages. This can be done.

[0326] The BT stress test is a type of accelerated test that measures the transients that occur during long-term use. It is possible to evaluate the change in the characteristics of the BT string (i.e., the change over time) in a short time. The amount of change in the threshold voltage of a transistor before and after the load test is an important factor for examining reliability. The smaller the threshold voltage fluctuation before and after the BT stress test, the better the It can be said that this is a highly reliable transistor.

[0327] Also, the gate electrode 206 and the electrode 263 are included, and the gate electrode 206 and the electrode 26 By making the potentials of the transistors 3 the same, the amount of variation in the threshold voltage is reduced. At the same time, the variations in electrical characteristics of the transistors are reduced.

[0328] The transistor 242 formed in the display region 231 is provided with a back gate electrode. Good too.

[0329] <Modification 3 of the Light-Emitting Device> The light-emitting device 250 with a top emission structure can display full color without using the color layer 266. Another example of a configuration for forming a light emitting device 250 with a top emission structure that can be used is shown in FIG. 20(B). Shown below.

[0330] The light emitting device 250 having a top emission structure shown in FIG. 20(B) includes a colored layer 266, and Instead of providing the overcoat layer 268, the EL layer 117R, the EL layer 117G, and the EL layer 117R are provided. 17B (not shown) can be used to display a color image. The EL layer 117R, the EL layer 117G, the EL layer 117B, etc. are different colors such as red, green, and blue. For example, the EL layer 117R emits light having a red wavelength. 92R is emitted from the EL layer 117G, and light 192G having a green wavelength is emitted from the EL layer 117G. Light 192B (not shown) having a blue wavelength is emitted from L layer 117B.

[0331] Furthermore, by not using the colored layer 266, the light 192R, the light 192G, and the light 192 This can eliminate the decrease in brightness that occurs when light 19 passes through the colored layer 266. 2R, light 192G, and light 192B, the EL layer 117R, the EL layer 117G By adjusting the thickness of the EL layer 117B, color purity can be improved.

[0332] <Modification 4 of the Light-Emitting Device> As shown in FIG. 21(A), in the light emitting device 250, a touch sensor is provided on the substrate 111 side. The touch sensor may be formed by using a conductive layer 991, a conductive layer 993, etc. An insulating layer 992 is provided between them.

[0333] The conductive layer 991 and / or the conductive layer 993 may be formed of indium tin oxide or indium zinc. It is desirable to use a transparent conductive film such as lead oxide. However, in order to reduce the resistance, 991 and / or the conductive layer 993 may be partially or entirely made of a layer having a low resistance material. For example, aluminum, titanium, chromium, nickel, copper, yttrium, di elemental metals consisting of zinc, molybdenum, silver, tantalum, or tungsten; or The alloy containing this as the main component can be used in a single layer structure or a laminated structure. Metal nanowires may be used as the layer 991 and / or the conductive layer 993. As the metal, silver is suitable. This can reduce the resistance value, The sensitivity of the sensor can be improved.

[0334] The insulating layer 992 may be made of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, Aluminum oxide, aluminum oxynitride, or aluminum oxynitride, etc., can be used as a single layer or The insulating layer 992 is preferably formed in a multi-layer structure. The film can be formed by a method such as a coating method or a printing method.

[0335] Although FIG. 21A shows an example in which the touch sensor is provided on the substrate 111 side, One aspect of the embodiment is not limited to this. The touch sensor may be provided on the substrate 121 side. It is also possible.

[0336] The substrate 994 may have the function of an optical film. The transparent plate may have a function such as a polarizing plate or a retardation plate.

[0337] Further, as shown in FIG. 21(B), a touch sensor may be formed directly on the substrate 111.

[0338] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0339] (Embodiment 5) In this embodiment, a structural example of a light-emitting element that can be used as the light-emitting element 125 will be described. Note that the EL layer 320 in this embodiment may be the same as the EL layer 117 in other embodiments. is equivalent to

[0340] <Configuration of light-emitting element> The light-emitting element 330 shown in FIG. 22(A) has an EL element between a pair of electrodes (electrode 318 and electrode 322). In the following description of this embodiment, the layer 320 is taken as an example. Electrode 318 is used as an anode and electrode 322 is used as a cathode.

[0341] The EL layer 320 may be formed to include at least a light-emitting layer. The functional layer other than the light-emitting layer may be a layered structure including a functional layer having a high hole injection property. materials with high hole transporting properties, materials with high electron transporting properties, materials with high electron injecting properties, bipolar A layer containing a substance with bipolar properties (a substance with high electron and hole transporting properties) can be used. Specifically functional layers such as a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer can be appropriately combined and used.

[0342] In the light-emitting device 330 shown in Fig. 22(A), a current flows due to the potential difference generated between the electrode 318 and the electrode 322, and holes and electrons recombine in the EL layer 320 to emit light. That is, it is configured such that a light-emitting region is formed in the EL layer 320.

[0343] In the present invention, the light emitted from the light-emitting device 330 is taken out to the outside from the side of the electrode 318 or the electrode 322. Therefore, either one of the electrode 318 or the electrode 322 has transparency. The EL layer 320 may be laminated in multiple layers between the electrode 318 and the electrode 322 as in the light-emitting device 331 shown in Fig. 22(B). When it has a laminated structure of x layers (x is a natural number of 2 or more), it is preferable to provide a charge generation layer 320a between the y-th EL layer 320 (y is a natural number satisfying 1 ≤ y < x) and the (y + 1)-th EL layer 320.

[0344] The charge generation layer 320a can be formed by appropriately combining a composite material of an organic compound and a metal oxide, a metal oxide, a composite material of an organic compound and an alkali metal, an alkaline earth metal, or a compound thereof, in addition to these. Examples of the composite material of an organic compound and a metal oxide include a composite material containing an organic compound and a metal oxide such as vanadium oxide, molybdenum oxide, or tungsten oxide. Examples of the organic compound include an aromatic amine compound, a carbazole derivative, and an aromatic hydrocarbon When there are multiple EL layers 320 stacked between the electrode 318 and the electrode 322 as in the light-emitting device 331 shown in Fig. 22(B), it is preferable to provide a charge generation layer 320a between the y-th EL layer 320 (y is a natural number satisfying 1 ≤ y < x) and the (y + 1)-th EL layer 320. The charge generation layer 320a can be formed by appropriately combining a composite material of an organic compound and a metal oxide, a metal oxide, a composite material of an organic compound and an alkali metal, an alkaline earth metal, or a compound thereof, in addition to these. Examples of the composite material of an organic compound and a metal oxide include

[0345] a composite material containing an organic compound and a metal oxide such as vanadium oxide, molybdenum oxide, or tungsten oxide. Examples of the organic compound include an aromatic amine compound, a carbazole derivative, and an aromatic hydrocarbon a composite material of an organic compound and an alkali metal, an alkaline earth metal, or a compound thereof, in addition to these. These can be appropriately combined and formed. Examples of the composite material of an organic compound and a metal oxide include for example, a composite material containing an organic compound and a metal oxide such as vanadium oxide, molybdenum oxide, or tungsten oxide. Examples of the organic compound include an aromatic amine compound, a carbazole derivative, and an aromatic hydrocarbon For example, it contains an organic compound and a metal oxide such as vanadium oxide, molybdenum oxide, or tungsten oxide. Examples of the organic compound include an aromatic amine compound, a carbazole derivative, and an aromatic hydrocarbon such as an aromatic amine compound, a carbazole derivative, and an aromatic hydrocarbon low molecular weight compounds such as silicon dioxide, or oligomers, dendrimers, polymers of these low molecular weight compounds Various compounds such as hole transport compounds can be used. As a reactive organic compound, the hole mobility is 10 -6 cm 2 / Vs or more can be applied. However, other materials may be used as long as they have a higher hole transporting property than electron transporting property. The materials used for the charge generation layer 320a have the following characteristics: carrier injection property, carrier Because of its excellent gas transport properties, the light emitting element 330 can be driven at low current and low voltage. It is possible.

[0346] The charge generating layer 320a is made of a composite material of an organic compound and a metal oxide, and other materials. For example, a layer containing a composite material of an organic compound and a metal oxide and a layer containing an electron transport material may be formed. A compound selected from the electron donating materials is combined with a layer containing a compound having high electron transport properties. Alternatively, a layer containing a composite material of an organic compound and a metal oxide and a transparent conductive film may be combined. may be formed in combination with each other.

[0347] The light emitting element 331 having such a configuration may have problems such as energy transfer and quenching. It is difficult to achieve this, and the range of materials to choose from is widened, making it possible to create a light-emitting element that has both high luminous efficiency and a long life. It is also easy to obtain phosphorescence in one light-emitting layer and fluorescence in the other. is.

[0348] The charge generating layer 320a is a layer that generates a charge when a voltage is applied between the electrode 318 and the electrode 322. The electron-generating layer 320a has a function of injecting holes into the EL layer 320 formed in contact with the electron-generating layer 320a. The other EL layer 320 has a function of injecting electrons.

[0349] The light-emitting element 331 shown in FIG. 22(B) can be realized by changing the type of light-emitting material used in the EL layer 320. In addition, it is possible to obtain various luminescent colors by using a plurality of luminescent materials with different luminescent colors. By using luminescent materials, it is possible to obtain broad spectrum luminescence and white luminescence. do.

[0350] When white light is to be emitted using the light-emitting element 331 shown in FIG. 22(B), a combination of a plurality of EL layers is used. In combination, it is sufficient if the configuration includes red, blue, and green light and emits white light. For example, The light-emitting layer contains a blue fluorescent material as a light-emitting material, and the light-emitting layer contains green and red phosphorescent materials as light-emitting materials. In addition, a light-emitting layer that emits red light and a light-emitting layer that emits green light may be used. Alternatively, the light-emitting layer may have a structure including a light-emitting layer that emits blue light and a light-emitting layer that emits red light. White light can be obtained even if the device has a light-emitting layer that emits light of complementary colors. In a stacked element in which two layers are stacked, the color of the light emitted from the light-emitting layer and the color of the light emitted from the light-emitting layer are When the colors of the emitted light are complementary to each other, the complementary colors are blue and yellow, or Examples include blue-green and red.

[0351] In the configuration of the above-mentioned stacked element, a charge generating layer is disposed between the stacked light emitting layers. By doing so, it is possible to realize a long-life element in the high-brightness region while maintaining a low current density. In addition, the voltage drop due to the resistance of the electrode material can be reduced, allowing for uniform generation over a large area. Light becomes possible.

[0352] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0353] (Embodiment 6) In this embodiment, an example of a lighting device or a display device using a light-emitting device according to one embodiment of the present invention will be described. This will be explained with reference to the drawings.

[0354] Figures 23(A1) and 23(B1) show the present invention installed between the front and rear seats of a taxi. 6 shows an example in which a lighting device 6001 or a lighting device 6002 to which a light-emitting device of one embodiment is applied is provided. The lighting device 6001 and the lighting device 6002 are made of an acrylic resin substrate or a glass substrate. The light-emitting device of one embodiment of the present invention is provided over a plate. When using a glass substrate for the device 6002, a transparent shatterproof In addition, the light-emitting device of one embodiment of the present invention may be provided with a shatterproof film. It can also function as a

[0355] FIG. 23(A1) shows a lighting device 6001 installed in a vehicle with a size that extends from near the ceiling to near the floor. FIG. 23(B1) shows an example in which the lighting device 6002 is installed near the ceiling inside the vehicle. An example is shown in which the seat is installed up to about the upper half of the front seats.

[0356] When the lighting device 6001 is not emitting light, the view ahead can be seen through the lighting device 6001. When the lighting device 6002 is not emitting light, the view ahead is seen through the lighting device 6002. It is possible.

[0357] In the unlikely event of being attacked by a robber, the lighting device 6001 or the lighting device 6002 is illuminated. This can frighten robbers and the like. With the 02 illuminated, robbers and other criminals can be trapped in the back seat, making it easier to detect criminals. The turnout rate can be increased.

[0358] FIG. 24A illustrates an example in which the light-emitting device of one embodiment of the present invention is used in a display window 6101 for a product or the like. Behind the display window 6101, there are a television 6111, a portable information terminal 6112, a digital camera, and a The 6113 still camera is on display.

[0359] As shown in FIG. 24(B), information such as text and images can be displayed in the display window 6101. In addition, while displaying information such as text and images in the display window 6101, In addition, the state of the exhibited item on the back side can be confirmed. The display window 6101 illuminates only a specific area, making it difficult to see the state behind that area. In FIG. 24(B), among the multiple exhibits, the digital still camera 6 Only 113 is invisible.

[0360] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is. [Explanation of symbols]

[0361] 100 Light-emitting device 101 Element formation substrate 111 Substrate 112 Adhesive layer 113 Peeling layer 114 Bulkhead 115 Electrode 117 EL layer 118 Electrode 119 Electrode 120 Adhesive layer 121 PCB 122 Aperture 123 Anisotropic Conductive Interconnect Layer 124 External electrode 125 Light-emitting element 128 Aperture 129 Aperture 130 areas 131 Translucent part 132 Light-emitting part 135 scan lines 136 Signal Line 141 terminals 142 terminals 150 Light-emitting device 191 light 192 light 200 Light-emitting device 205 Insulation Layer 206 Gate electrode 207 Gate insulating layer 208 Semiconductor layer 210 Insulating layer 211 Insulating layer 216 Terminal electrode 219 Wiring 226 Electrode 231 Display area 232 Drive Circuit 233 Drive Circuit 235 light 242 transistors 243 Capacitor 250 Light-emitting device 252 transistors 263 Electrode 266 Colored layer 268 Overcoat Layer 318 Electrode 320 EL layer 322 Electrode 330 Light-emitting element 331 Light-emitting element 431 Transistor 435 nodes 437 nodes 981 Microlens Array 982 Light diffusion film 991 Conductive layer 992 Insulation layer 993 Conductive layer 994 board 6001 Lighting equipment 6002 Lighting equipment 6101 Display window 6111 Television 6112 Portable information terminal 6113 Digital still camera 117B EL layer 117G EL layer 117R EL layer 118H electrode 118V electrode 192B Light 192G light 192R light 209a Source electrode 209b Drain electrode 231a Part 320a Charge generation layer

Claims

[Claim 1] A first region and a second region are included. the first region has a light-emitting portion and does not transmit light; the second region is translucent; the first regions are arranged in a matrix pattern, and the second regions are arranged in a mesh pattern; the light-emitting portion has a light-emitting element including a first electrode, an EL layer, and a second electrode; a transistor is electrically connected to the light-emitting element; A light-emitting device in which a channel formation region of the transistor includes an oxide semiconductor having a plurality of crystal parts aligned along the c-axis.

Images