Method for manufacturing light-emitting device and method for manufacturing semiconductor device

Abstract

To provide a technique advantageous for preventing a reduction in image quality caused by stitch exposure.SOLUTION: Provided is a method for manufacturing a light-emitting device comprising a substrate including an array area where a plurality of organic light-emitting elements is arranged in array, and a peripheral area arranged to be adjacent to the array area. An exposure step for forming wiring patterns to be arranged in the array area and the peripheral area includes a first exposure step of collectively exposing the array area, and a second exposure step different from the first exposure step, the step dividing the peripheral area before exposing the area.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to a method for manufacturing a light emitting device and a method for manufacturing a semiconductor device. [Background technology]

[0002] In light-emitting devices using organic electroluminescence (EL) elements, etc., the development of virtual reality (VR) and augmented reality (AR) technologies has led to a demand for light-emitting devices with higher resolution and more pixels, resulting in a demand for larger-sized light-emitting devices. However, for example, the exposure size of an exposure machine used in semiconductor microprocessing is generally about 33 mm x 26 mm, and when manufacturing large-sized light-emitting devices, it is necessary to divide the exposed area into two or more areas and perform joint exposure (divided exposure). Patent Document 1 shows that a deterioration in device characteristics can be avoided by locating the joint area of ​​exposure at the position where electrical wiring connecting adjacent pixel electrodes is arranged. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2013 / 088479 Summary of the Invention [Problem to be solved by the invention]

[0004] When a seam in the stitching exposure is located in an area where an image of a light-emitting device is displayed, there may be a pattern shift in the electrical wiring at the seam, or a change in the shape of the pattern in each divided exposed area. Fluctuations in resistance due to pattern shifts at the seam, or fluctuations in parasitic capacitance due to changes in the shape of the pattern, may cause visible unevenness in the displayed image due to the stitching exposure, which may result in a decrease in image quality.

[0005] An object of the present invention is to provide a technique that is advantageous in suppressing degradation of image quality caused by stitching exposure. [Means for solving the problem]

[0006] In view of the above problems, a manufacturing method for a light-emitting device according to an embodiment of the present invention is a manufacturing method for a light-emitting device including a substrate having an array region in which a plurality of organic light-emitting elements are arranged in an array, and a peripheral region arranged adjacent to the array region, characterized in that the exposure process for forming wiring patterns arranged in the array region and the peripheral region includes a first exposure process for exposing the array region all at once, and a second exposure process separate from the first exposure process for exposing the peripheral region in parts. [Effects of the Invention]

[0007] According to the present invention, it is possible to provide a technique that is advantageous in suppressing degradation of image quality caused by stitching exposure. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view showing a configuration example of a light emitting device according to an embodiment of the present invention. [Figure 2] FIG. 2 is a circuit diagram showing a configuration example of a pixel of the light-emitting device in FIG. [Figure 3] FIG. 2 is a plan view showing a configuration example of the light emitting device of FIG. [Figure 4] FIG. 2 is a diagram illustrating a scanning exposure method. [Figure 5] 4A to 4C are diagrams illustrating scanning directions when manufacturing the light-emitting device of FIG. 3. [Figure 6] 4 is a plan view showing an example of the configuration of a boundary portion of the light emitting device of FIG. 3. [Figure 7] 4 is a plan view showing an example of the arrangement of the boundary portion of the light emitting device of FIG. 3. [Figure 8] FIG. 4 is a plan view showing a modification of the light emitting device of FIG. [Figure 9] FIG. 4 is a plan view showing a modification of the light emitting device of FIG. [Figure 10] 2 is a cross-sectional view showing a configuration example of a pixel of the light-emitting device of FIG. [Figure 11]1A and 1B are diagrams illustrating an example of a display device using the light-emitting device of this embodiment. [Figure 12] FIG. 1 is a diagram showing an example of a photoelectric conversion device using the light emitting device of this embodiment. [Figure 13] 1A to 1C are diagrams illustrating examples of electronic devices using the light-emitting device of this embodiment. [Figure 14] 1A and 1B are diagrams illustrating an example of a display device using the light-emitting device of this embodiment. [Figure 15] 1 is a diagram showing an example of a lighting device using the light-emitting device of this embodiment. [Figure 16] 1A and 1B are diagrams showing an example of a moving object using the light emitting device of the present embodiment. [Figure 17] FIG. 1 is a diagram showing an example of a wearable device using the light-emitting device of the present embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0010] A method for manufacturing a light emitting device according to an embodiment of the present disclosure will be described with reference to Figures 1 to 9. Figure 1 is a cross-sectional view showing an example of the configuration of a light emitting device 100 manufactured using the manufacturing method of this embodiment. Figure 2 is a diagram showing an example of the configuration of a drive circuit for a pixel PIX arranged in the light emitting device 100. Figure 3 is a plan view showing the example of the configuration of the light emitting device 100.

[0011] The light-emitting device 100 includes a substrate 115 having an array region 300 in which a plurality of organic light-emitting elements 201 are arranged in an array, and a peripheral region 301 arranged adjacent to the array region 300. The substrate 115 may be a semiconductor substrate such as single-crystal silicon. However, the substrate 115 is not limited thereto, and an insulating substrate such as glass or plastic on which a semiconductor layer such as polysilicon or amorphous silicon is provided may also be used. A wiring structure 101 is disposed on the substrate 115 on which transistors TR for driving the organic light-emitting elements 201 are provided. The wiring structure 101 includes an insulator such as silicon oxide, a wiring pattern disposed in the insulator, and plugs for connecting the wiring patterns. A lower electrode 110, an insulating layer 111, an organic layer 112 including a light-emitting layer, and an upper electrode 113, which constitute the organic light-emitting element 201, are disposed on the wiring structure 101. At least one optical layer 114 may be disposed on the organic light-emitting element 201 via a protective layer (not shown) for protecting each component of the pixel PIX from particles, moisture in the air, etc. The optical layer 114 may include, for example, at least one of a color filter and a microlens. The optical layer 114 may have a single-layer structure or a laminated structure including multiple layers.

[0012] The transistor TR that drives each of the plurality of organic light-emitting elements 201 includes, for example, a gate electrode 102. FIG. 1 shows a two-layer wiring structure 101 including a wiring layer on which a wiring pattern 104 is arranged and a wiring layer on which a wiring pattern 106 is arranged. The wiring structure 101 is provided with a plug 103 that connects to the gate electrode 102 and the substrate 115. The plug 103 connects between the gate electrode 102 and the wiring pattern 104 and between the substrate 115 and the wiring pattern 104. The wiring structure 101 is also provided with a plug 105 that connects between the wiring pattern 104 and the wiring pattern 106, and a plug 107 that connects between the wiring pattern 106 and the lower electrode 110. While the configuration shown in FIG. 1 shows a case where there are two wiring layers on which wiring patterns are arranged, the number of wiring layers may be one or three or more depending on the configuration of the light-emitting device 100.

[0013] FIG. 2 shows an example of the circuit configuration of a pixel PIX in this embodiment. The pixel PIX can include an organic light-emitting element 201, a driving transistor 202, and a writing transistor 203. The above-mentioned transistor TR corresponds to the driving transistor 202, the writing transistor 203, etc. The writing transistor 203 has a gate electrode 102 connected to a signal line SEL and one main terminal (the source in the configuration of FIG. 2) connected to a signal line DATA. The gate electrode 102 of the driving transistor 202 is connected to the other main terminal (the drain in the configuration of FIG. 2) of the writing transistor 203. One main terminal (the source in the configuration of FIG. 2) of the driving transistor 202 is connected to a power supply line VDD, and the other main terminal (the drain in the configuration of FIG. 2) of the driving transistor 202 is connected to one main terminal of the organic light-emitting element 201. The other main terminal of the organic light-emitting element 201 is connected to a power supply line VSS. When the write transistor 203 is turned on in response to a signal supplied to the signal line SEL, a predetermined potential is supplied as a luminance signal from the signal line DATA to the gate electrode 102 of the drive transistor 202. The drive transistor 202 supplies a current corresponding to the potential of the luminance signal to the organic light emitting element 201. This causes the organic light emitting element 201 to emit light at a luminance corresponding to the luminance signal (current driving).

[0014] Here, consider a case where, when forming the wiring patterns 104 and 106, the region in which the wiring patterns 104 and 106 are formed is divided into two or more regions and subjected to joint exposure (divided exposure). The wiring patterns 104 and 106 are wiring patterns arranged in the wiring layer closest to the gate electrode 102 of the transistor TR, and wiring patterns arranged in the wiring layer second closest to the gate electrode 102. Therefore, they can be wiring patterns electrically connected to transistors TR, such as the drive transistor 202 and the write transistor 203. When joint exposure is used, the line widths of the wiring patterns 104 and 106 formed using joint exposure may differ for each divided exposed region. Furthermore, the overlap amount of the wiring patterns 104 and 106 with respect to a pattern of another layer (for example, a layer formed using flood exposure), such as the gate electrode 102, may change. Specifically, the line width of the wiring pattern 104 may differ for each region at the boundary where the connecting exposure was performed, and the parasitic capacitance between the gate electrode 102 of the driving transistor 202 and the signal line SEL may differ for each region.

[0015] The parasitic capacitance between the gate electrode 102 of the driving transistor 202 and the signal line SEL affects the voltage applied from the signal line DATA to the gate electrode 102 of the driving transistor 202 when the writing transistor 203 is conductive. If the value of the parasitic capacitance differs, the voltage applied to the gate electrode 102 of the driving transistor 202 will differ even when the same luminance signal is supplied, and the amount of current flowing through the organic light-emitting element 201 will change. In other words, the amount of current flowing through the organic light-emitting element 201 will vary for each exposure region when bridge exposure is performed, and this may result in differences in the emission intensity of the organic light-emitting element 201 at the boundary of the bridge exposure.

[0016] The plan view of FIG. 3 shows regions formed using one-shot exposure and regions formed using stitching exposure (divided exposure) when manufacturing the substrate 115 included in the light-emitting device 100. As described above, the substrate 115 includes an array region 300 in which pixels PIX, each including an organic light-emitting element 201, are arranged in an array, and a peripheral region 301 arranged around the array region 300. The array region 300 may include an effective region 302 that actually displays an image and a dummy region 303 in which dummy pixels are arranged. For example, the pixels PIX arranged in the effective region 302 receive a signal from a circuit arranged in the peripheral region 301, and the organic light-emitting element 201 emits light at a luminance corresponding to the luminance signal. On the other hand, the dummy pixels arranged in the dummy region 303 have the same configuration as the pixels PIX arranged in the effective region 302, but do not emit light. For example, the plug 107 connecting the wiring pattern 106 and the lower electrode 110 may not be arranged in the dummy pixel. In the peripheral region 301, circuits for operating the pixels PIX and the like can be arranged.

[0017] Next, in this embodiment, an exposure process for forming wiring patterns disposed in the array region 300 and the peripheral region 301 will be described. The exposure process for forming wiring patterns disposed in the array region 300 and the peripheral region 301 includes an exposure process for exposing the array region 300 all at once and an exposure process for dividing and exposing the peripheral region 301, which is separate from the exposure process for exposing the array region 300. That is, the array region 300 is exposed as a whole all at once, but the peripheral region 301 is divided into exposure regions 401 and 402 at the boundary 400 and exposed separately. Here, the wiring patterns formed using these exposure processes may be the wiring pattern 104 disposed in the wiring layer closest to the gate electrode 102 of the above-mentioned transistor TR and the wiring pattern 106 disposed in the wiring layer second closest to the gate electrode 102.

[0018] In this embodiment, the array region 300 is exposed in one go. This prevents differences in the light emission intensity of the organic light-emitting element 201 at the boundary 400 of the stitching exposure when the organic light-emitting element 201 is manufactured using stitching exposure. On the other hand, the peripheral region 301, which is disposed around the array region 300 and has a larger width than the array region 300, can be made larger by using stitching exposure. This improves the functionality of the circuit disposed in the peripheral region 301 and increases the degree of freedom in design. In other words, it is possible to obtain a light-emitting device 100 with higher performance while suppressing degradation in image quality caused by stitching exposure (divided exposure).

[0019] Scanning exposure may be used in the exposure process for forming the wiring patterns disposed in the array region 300 and the peripheral region 301. Scanning exposure is a method of exposing through a slit while continuously moving a mask (reticle) and a substrate. In scanning exposure, for example, as shown in FIG. 4, a circuit pattern 502 drawn on a mask 501 is traced from top to bottom along a scanning direction 503 to expose and form a pattern on a substrate 500. The scanning direction 503 generally follows the longitudinal direction of the mask 501.

[0020] For example, as shown in FIG. 5( a), the array region 300 may be exposed in one go using a mask 600 in a scanning direction 601 along the longitudinal direction of the mask 600. Also, as shown in FIG. 5( b), the exposure region 401 in the peripheral region 301 may be exposed using a mask 700 in a scanning direction 701 along the longitudinal direction of the mask 700. Similarly, the exposure region 402 in the peripheral region 301 may be exposed using a mask 702 in a scanning direction 701 along the longitudinal direction of the mask 702. In this case, taking into consideration the widths required for the array region 300 and the exposure regions 401 and 402, the scanning direction 601 when exposing the array region 300 and the scanning direction 701 when exposing the exposure regions 401 and 402 may be different from each other, as shown in FIGS. 5( a) and 5(b). In the simplest configuration, as can be seen from the notch direction of the substrate 115 shown in FIGS. 5(a) and 5(b), the angle between the scan direction 601 and the scan direction 701 is 90 degrees or 270 degrees. However, the angle between the scan direction 601 and the scan direction 701 is not limited to 90 degrees or 270 degrees. The angle between the scan direction 601 and the scan direction 701 may be any combination of angles as long as the array region 300 can be exposed collectively and the peripheral region 301 can be exposed separately. Furthermore, in FIG. 5(b), the positions of the exposure regions 401 and 402 that overlap with the array region 300 may not be exposed by using a shutter or the like when exposing the exposure regions 401 and 402. Furthermore, the order of exposure of the array region 300 and the peripheral region 301 may be such that the array region 300 is exposed first or second. Furthermore, exposure of the array region 300 may be performed between exposure of exposure region 401 and exposure region 402 in the peripheral region 301. However, if the scanning directions of exposure differ between the array region 300 and the peripheral region 301, it may be more appropriate to perform exposure of the peripheral region 301 collectively in terms of accuracy and efficiency, taking into account operations such as rotation of the substrate 115.

[0021] Although exposure along the scan direction 601 allows for full exposure of the array region 300, there may be cases where exposure along the scan direction 701 does not allow full exposure of the array region 300. In such cases, the array region 300 is exposed in full by switching the scan direction between exposure of the array region 300 and exposure of the peripheral region 301. This prevents the boundary between the stitching exposures from running vertically across the array region 300. This prevents variations in the line widths of the wiring patterns 104 and 106, including signal wiring patterns for transmitting signals to operate the multiple organic light-emitting elements 201, and the amount of overlap with the gate electrode 102, across the boundary between the stitching exposures. As a result, differences in the light-emitting intensity of the organic light-emitting elements 201 are avoided, and degradation of image quality due to divided exposure is suppressed.

[0022] The exposure process for exposing the array region 300 and the exposure process for exposing the peripheral region 301 (exposure regions 401 and 402) may be performed using exposure machines with different specifications. For example, the resolution of the exposure machine used in the exposure process for exposing the array region 300 may be different from the resolution of the exposure machine used in the exposure process for exposing the peripheral region 301 (exposure regions 401 and 402). For example, a drive circuit for driving the pixels PIX (organic light-emitting element 201) arranged in the array region 300 may be formed in the peripheral region 301. For example, the drive circuit arranged in the peripheral region 301 may include elements such as transistors that are smaller than elements such as the drive transistor 202 and the write transistor 203 arranged in the array region 300. In other words, of the wiring patterns 104 and 106, the wiring patterns 104 and 106 arranged in the peripheral region 301 may include wiring patterns that are smaller than the wiring patterns 104 and 106 arranged in the array region 300. Therefore, the resolution of the exposure machine used in the exposure step of exposing the peripheral region 301 (exposure regions 401, 402) may be higher than the resolution of the exposure machine used in the exposure step of exposing the array region 300. In this case, the wavelength of the exposure light of the exposure machine used in the exposure step of exposing the array region 300 may be different from the wavelength of the exposure light of the exposure machine used in the exposure step of exposing the peripheral region 301 (exposure regions 401, 402). For example, ArF exposure (193 nm) may be used in the exposure step of exposing the peripheral region 301 (exposure regions 401, 402), and KrF exposure (248 nm) or i-line exposure (365 nm) may be used in the exposure step of exposing the array region 300.

[0023] The wiring patterns 104 and 106 may be patterns containing copper. Furthermore, among the conductive patterns of the plugs 103, 105, 107, etc. (if three or more wiring layers are arranged, the wiring patterns of these wiring layers, etc.) arranged in the array region 300, not limited to the wiring patterns 104 and 106, are formed using one-shot exposure. Meanwhile, among these conductive patterns, the pattern arranged in the peripheral region 301 may be formed using joint exposure (division exposure). Furthermore, the same may be true for the optical layer 114, such as a color filter or a microlens arranged on the wiring structure 101. That is, the exposure process for forming the optical layer 114 may include an exposure process for exposing the array region 300 all at once and an exposure process for exposing the peripheral region 301 in a divided manner, which is separate from the exposure process for the array region 300.

[0024] 6 is a diagram showing an example of the configuration of the boundary 400 between the array region and the peripheral region, and the boundary 400 of the region divided and exposed in the exposure process for forming the wiring pattern of the peripheral region 301. In FIG. 6, the boundary 400 between the array region and the peripheral region and the boundary 400 disposed in the peripheral region 301 are shown as boundary 450. This is because not only the boundary between the exposure region 401 and the exposure region 402 but also the array region 300 and the peripheral region 301 (exposure regions 401, 402) are subjected to joint exposure (divided exposure). Therefore, as shown in FIG. 7, a boundary 453 including the boundary 450 subjected to joint exposure is disposed.

[0025] As shown in FIG. 6 , at the boundary 450, the center lines of adjacent wiring patterns 104 and 106 may be shifted in the same direction. This allows the boundary 450 to be recognized. Furthermore, the wiring patterns 104 and 106 include a boundary pattern 451 arranged at a boundary 453 near the boundary 450. The boundary pattern 451 has a wider pattern width than a wiring pattern 452 of the wiring patterns 104 and 106 that is in contact with the boundary pattern 451. This prevents disconnections in the wiring patterns that straddle the boundary 450. The boundary 453 can be defined as an area where the line width of the wiring patterns arranged across the boundary 450 is wider than the areas before and after the boundary pattern 451. Furthermore, an alignment mark may be arranged at the boundary 453 to improve the connection accuracy between the wiring patterns at the boundary 450.

[0026] The optical layer 114, which may include a color filter, a microlens, and the like, may have an alignment mark in the peripheral region 301. In this case, the optical layer 114 may not have any patterns other than accessory patterns such as alignment marks in the peripheral region 301. In other words, when a color filter is arranged as the optical layer 114, a pattern functioning as an alignment mark may be formed in the peripheral region 301 using the same material as the color filter, but a pattern functioning as a color filter may not be formed. For example, in the peripheral region 301, the same layer as the color filter in the optical layer 114 may not be arranged except for the alignment mark, or a material layer with a constant film thickness (so-called solid pattern) may be arranged other than the alignment mark. The same applies when a microlens is arranged as the optical layer 114. Furthermore, for example, the optical layer 114 may not include a pattern spanning the array region 300 and the peripheral region 301.

[0027] In the above description, the peripheral region 301 is divided into two regions, exposure region 401 and exposure region 402, and each region is exposed. However, the number of regions divided in the exposure process for forming each component of the peripheral region 301 is not limited to two. For example, as shown in FIG. 8 , the peripheral region 301 may be divided into exposure regions 401, 402, and 403 along boundaries 400a and 400b, and each region may be exposed. Furthermore, the peripheral region 301 may be divided into four or more regions, and each region may be exposed. Even in this case, the array region 300 is exposed collectively. This prevents degradation of image quality due to the boundary of the stitching exposure being located in the array region 300.

[0028] Also, in the above description, it has been explained that scanning exposure is used in manufacturing the light emitting device 100, and the scanning direction when exposing the array region 300 is different from the scanning direction when dividing and exposing the peripheral region 301. However, this is not limited thereto, and as shown in Fig. 9, the scanning direction when dividing and exposing the peripheral region 301 may be the same as the scanning direction when exposing the array region 300. The scanning direction when dividing and exposing the peripheral region 301 may be appropriately determined depending on the sizes of the array region 300 and the peripheral region 301, the specifications of the exposure apparatus used, etc.

[0029] So far, it has been described that when manufacturing the light emitting device 100, the array region 300 is formed using flood exposure, and the peripheral region 301 is formed using stitching exposure (divided exposure). However, the manufacturing method combining flood exposure and stitching exposure is not limited to use when manufacturing the light emitting device 100. For example, the above-described manufacturing method can also be applied to the manufacture of a semiconductor device including a substrate having an array region 300 in which a plurality of elements are arranged in an array. A plurality of elements having a predetermined pattern can be repeatedly arranged in the array region 300.

[0030] For example, each of the multiple elements arranged in the array region 300 may include a photoelectric conversion element that converts incident light into an electrical signal. A semiconductor device having multiple photoelectric conversion elements arranged therein may also be called a photoelectric conversion device or an imaging device. In this case, since no boundary of stitching exposure is arranged in the array region 300, an image formed using the obtained signal does not have steps or the like caused by the boundary of stitching exposure, as compared to when stitching exposure is performed. In other words, degradation of the image quality of the obtained image is suppressed.

[0031] 5, when manufacturing a semiconductor device including an array region 300 including photoelectric conversion elements and the like, the scanning direction when exposing the array region 300 and the scanning direction when exposing the peripheral region 301 may be different from each other. Each of the above-described embodiments can be appropriately applied to the manufacture of semiconductor devices other than the light emitting device 100.

[0032] Here, application examples in which the light emitting device 100 manufactured using the manufacturing method of this embodiment is applied to a display device, a photoelectric conversion device, an electronic device, a lighting device, a mobile object, and a wearable device will be described with reference to Figures 10(a) and 10(b) to Figures 17(a) and 17(b). The description will be made assuming that an organic light emitting element (OLED), such as an organic EL element using an organic light emitting material, is disposed in the pixel PIX of the light emitting device 100. First, details of each component disposed in the pixel PIX of the light emitting device 100 will be shown, and then application examples will be described.

[0033] An organic light-emitting device according to one embodiment of the present invention has a first electrode, a second electrode, and an organic compound layer disposed between these electrodes. One of the first electrode and the second electrode is an anode and the other is a cathode. In the organic light-emitting device of this embodiment, the organic compound layer may be a single layer or a laminate consisting of multiple layers, as long as it has an emitting layer. If the organic compound layer is a laminate consisting of multiple layers, the organic compound layer may include, in addition to the emitting layer, a hole injection layer, a hole transport layer, an electron blocking layer, a hole / exciton blocking layer, an electron transport layer, an electron injection layer, etc. The emitting layer may also be a single layer or a laminate consisting of multiple layers. If the emitting layer is a multi-layer, a charge generation layer may be disposed between the emitting layers. The charge generation layer may be composed of a compound having a lower LUMO than the hole transport layer, and the LUMO of the charge generation layer may be lower than the HOMO of the hole transport layer. Here, the molecular orbital energy of the organic compound layer may be the molecular orbital energy of the organic compound having the largest weight ratio in the organic compound layer.

[0034] Here, the closer the HOMO and LUMO are to the vacuum level, the higher they are described as being. The LUMO of the charge generation layer being lower than the HOMO of the hole transport layer means that the LUMO of the charge generation layer is closer to the vacuum level than the HOMO of the hole transport layer.

[0035] In this specification, the HOMO and LUMO can be calculated using molecular orbital calculations. The molecular orbital calculations are performed using density functional theory (DFT) or the like, with the functional being B3LYP and the basis set being 6-31G. *It is also the case that the range of graphical designs is Gaussian09(Gaussian09). ,RevisionC.01,MJFrisch,GWTrucks,HBSchlegel,GEScus area, MARobb, JRCheeseman, G. Scalmani, V. Barone, B. Mennucci, G. Petersson, H. Nakatsuji, M. Caricato, X. Li, HPHr atchian, AFIzmaylov, J. Bloino, G. Zheng, JLSonnenberg, M. Hada, M. Ehara, K. Toyota, R. Fukuda, J. Hasegawa, M. Ish ida,T.Nakajima,Y.Honda,O.Kitao,H.Nakai,T.Vreven,JAMontgomery,Jr.,JEPeralta,F.Ogliaro,M.Bearpark,JJH eyd, E. Brothers, KNKudin, VNStaroverov, T. Keith, R. Kobayashi, J. Normand, K. Raghavachari, A. Rendell, JCBuran t,SSIyengar,J.Tomasi,M.Cossi,N.Rega,JMMillam,M.Klene,JEKnox,JBCross,V.Bakken,C.Adamo,J.Jaramillo,R. Gomperts,REStratmann,O.Yazyev,AJAustin,R.Cammi,C.Pomelli,JWOchterski,RLMartin,K.Morokuma,VGZakrzews ki,GAVoth,P.Salvador,JJDannenberg,S.Dapprich,ADDaniels,O.Farkas,JBForesman,JVOrtiz,JCioslowski,and DJFox,Gaussian,Inc.,Wallingford CT,2010.)

[0036] The HOMO and LUMO in this specification can be calculated using the ionization potential and band gap. The HOMO can be estimated by measuring the ionization potential. The ionization potential can be measured by dissolving the compound to be measured in a solvent such as toluene and using a measuring device such as an AC-3. The band gap can be measured by dissolving the compound to be measured in a solvent such as toluene and irradiating it with excitation light. The band gap can be measured by measuring the absorption edge of the excitation light. Alternatively, the compound to be measured can be deposited on a substrate such as glass and irradiated with excitation light on the deposited film. The band gap can be measured by measuring the absorption edge of the absorption spectrum where the deposited film absorbs the excitation light.

[0037] The LUMO can be calculated using the band gap and ionization potential: subtracting the ionization potential from the band gap gives the LUMO.

[0038] The LUMO can also be estimated from the reduction potential. For example, the one-electron reduction potential can be estimated using CV (cyclic volmetry) measurements. CV measurements are performed, for example, in a 0.1 M tetrabutylammonium perchlorate solution in DMF, with an Ag / Ag reference electrode. + The LUMO can be estimated by adding -4.8 eV, the difference between the reduction potential of the compound and that of ferrocene, to the reduction potential of the compound obtained.

[0039] If necessary, conventionally known low-molecular-weight and high-molecular-weight hole-injecting or hole-transporting compounds, host compounds, light-emitting compounds, electron-injecting or electron-transporting compounds, etc. may be used together. Examples of these compounds are given below.

[0040] Suitable hole injection and transport materials are those with high hole mobility that facilitates hole injection from the anode and transports the injected holes to the light-emitting layer. Furthermore, materials with high glass transition temperatures are suitable to reduce film quality degradation, such as crystallization, in organic light-emitting devices. Examples of low-molecular-weight and high-molecular-weight materials with hole injection and transport properties include triarylamine derivatives, arylcarbazole derivatives, phenylenediamine derivatives, stilbene derivatives, phthalocyanine derivatives, porphyrin derivatives, poly(vinylcarbazole), poly(thiophene), and other conductive polymers. Furthermore, the above-mentioned hole injection and transport materials are also suitable for use in electron blocking layers. Specific examples of compounds that can be used as hole injection and transport materials are listed below, but are not limited to these.

[0041] [ka]

[0042] Among the hole transport materials listed above, HT16 to HT18 can reduce the driving voltage when used in a layer in contact with the anode. HT16 is widely used in organic light-emitting devices. HT2, HT3, HT4, HT5, HT6, HT10, and HT12 may be used in an organic compound layer adjacent to HT16. Furthermore, multiple materials may be used in one organic compound layer.

[0043] Examples of luminescent materials that are mainly involved in luminescence function include fused ring compounds (e.g., fluorene derivatives, naphthalene derivatives, pyrene derivatives, perylene derivatives, tetracene derivatives, anthracene derivatives, rubrene, etc.), quinacridone derivatives, coumarin derivatives, stilbene derivatives, organoaluminum complexes such as tris(8-quinolinolato)aluminum, iridium complexes, platinum complexes, rhenium complexes, copper complexes, europium complexes, ruthenium complexes, and polymer derivatives such as poly(phenylenevinylene) derivatives, poly(fluorene) derivatives, and poly(phenylene) derivatives.

[0044] Specific examples of compounds that can be used as light-emitting materials are shown below, but the present invention is not limited to these.

[0045] [ka]

[0046] [ka]

[0047] When the light-emitting material is a hydrocarbon compound, it is suitable because it can reduce the decrease in light-emitting efficiency due to exciplex formation and the decrease in color purity due to the change in the emission spectrum of the light-emitting material due to exciplex formation.

[0048] Hydrocarbon compounds are compounds composed only of carbon and hydrogen, and among the above-mentioned exemplary compounds, BD7, BD8, GD5 to GD9, and RD1 are mentioned.

[0049] When the light-emitting material is a fused polycyclic ring containing a five-membered ring, it is suitable because it has a high ionization potential, is resistant to oxidation, and forms a device with a long durability and life. Among the above-mentioned exemplary compounds, BD7, BD8, GD5 to GD9, and RD1 are examples.

[0050] Examples of the light-emitting layer host or light-emitting assist material contained in the light-emitting layer include aromatic hydrocarbon compounds or derivatives thereof, as well as carbazole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, organoaluminum complexes such as tris(8-quinolinolato)aluminum, and organic beryllium complexes.

[0051] Specific examples of compounds that can be used as the light-emitting layer host or light-emitting assist material contained in the light-emitting layer are shown below, but the present invention is not limited to these.

[0052] [ka]

[0053] The host material may be a hydrocarbon compound. A hydrocarbon compound is a compound composed only of carbon and hydrogen, and examples of the above-mentioned compounds include EM1 to EM12 and EM16 to EM27. From the viewpoint of stability, host materials that do not have a carbon-heteroatom bond in the single bond connecting the aryl group units in their structure, such as F3 in Compound 1, are more suitable.

[0054] The electron transporting material can be arbitrarily selected from those capable of transporting electrons injected from the cathode to the light-emitting layer, and is selected taking into consideration the balance with the hole mobility of the hole transporting material, etc. Examples of materials having electron transport properties include oxadiazole derivatives, oxazole derivatives, pyrazine derivatives, triazole derivatives, triazine derivatives, quinoline derivatives, quinoxaline derivatives, phenanthroline derivatives, organoaluminum complexes, and fused ring compounds (e.g., fluorene derivatives, naphthalene derivatives, chrysene derivatives, anthracene derivatives, etc.). Furthermore, the above electron transporting materials are also suitable for use in hole-blocking layers.

[0055] Specific examples of compounds that can be used as electron transporting materials are shown below, but the present invention is not limited to these.

[0056] [ka]

[0057] The electron injection material can be selected from those that allow easy electron injection from the cathode, taking into consideration the balance with hole injection properties. Organic compounds include n-type dopants and reducing dopants. Examples include compounds containing alkali metals such as lithium fluoride, lithium complexes such as lithium quinolinol, benzimidazolidene derivatives, imidazolidene derivatives, fulvalene derivatives, and acridine derivatives.

[0058] It can also be used in combination with the above electron transporting material.

[0059] Structure of organic light-emitting element The organic light-emitting element is provided by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, etc. may be provided on the cathode. When a color filter is provided, a planarizing layer may be provided between the protective layer and the color filter. The planarizing layer may be made of an acrylic resin, etc. The same applies when a planarizing layer is provided between the color filter and the microlens.

[0060] substrate Examples of the substrate include quartz, glass, silicon wafer, resin, and metal. The substrate may also include switching elements such as transistors and wiring patterns, with an insulating layer provided thereon. The insulating layer may be made of any material as long as it allows contact holes to be formed so that wiring patterns can be formed between the first electrode and the substrate, and insulation from unconnected wiring patterns is ensured. For example, the insulating layer may be made of a resin such as polyimide, silicon oxide, silicon nitride, or the like.

[0061] electrode A pair of electrodes can be used as the electrodes. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with a higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0062] The anode may be made of a material with a high work function. For example, simple metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, and tungsten, mixtures containing these metals, alloys of these metals, and metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and zinc indium oxide can be used. Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used as the anode.

[0063] These electrode materials may be used alone or in combination of two or more. The anode may be composed of one layer or multiple layers.

[0064] When the electrode is used as a reflective electrode, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or alloys thereof, or laminates thereof can be used. The above materials can also function as a reflective film without functioning as an electrode. Furthermore, when a transparent electrode is used as the electrode, a transparent conductive oxide layer such as indium tin oxide (ITO) or indium zinc oxide can be used, but is not limited to these. Photolithography technology can be used to form the electrode.

[0065] On the other hand, a material with a low work function may be selected as the cathode material. Examples include simple metals such as alkali metals (e.g., lithium), alkaline earth metals (e.g., calcium), aluminum, titanium, manganese, silver, lead, and chromium, as well as mixtures containing these metals. Alternatively, alloys combining these simple metals may be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, and zinc-silver may be used. Metal oxides such as indium tin oxide (ITO) may also be used. These electrode materials may be used alone or in combination. The cathode may have a single-layer or multi-layer structure. Silver may be used as the cathode, and a silver alloy may be used to reduce silver aggregation. The alloy ratio is not important as long as silver aggregation is reduced. For example, the silver:other metal ratio may be 1:1 or 3:1.

[0066] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but using a DC or AC sputtering method, for example, can provide good coverage of the formed film and reduce the resistance of the cathode.

[0067] Pixel isolation layer The pixel separation layer may be formed of silicon oxides such as silicon nitride (SiN), silicon oxynitride (SiON), or silicon oxide (SiO) formed using a chemical vapor deposition (CVD) method. To increase the in-plane resistance of the organic compound layer, the thickness of the organic compound layer, particularly the hole transport layer, may be thinned on the sidewalls of the pixel separation layer. Specifically, the thickness of the organic compound layer on the sidewalls can be thinned by increasing the taper angle of the sidewalls of the pixel separation layer or the thickness of the pixel separation layer, thereby increasing vignetting during deposition.

[0068] On the other hand, the sidewall taper angle and film thickness of the pixel separation layer can be adjusted to the extent that voids are not formed in the protective layer formed thereon. By preventing voids from being formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, deterioration of reliability such as the occurrence of dark spots and poor conduction of the second electrode can be reduced.

[0069] According to this embodiment, charge leakage to adjacent pixels can be effectively suppressed even if the taper angle of the sidewall of the pixel separation layer is not steep. As a result of this study, it was found that charge leakage can be sufficiently reduced if the taper angle is between 60 degrees and 90 degrees. The thickness of the pixel separation layer may be between 10 nm and 150 nm. Similar effects can also be achieved even if the pixel separation layer is composed only of pixel electrodes without a pixel separation layer. However, in this case, short circuits in organic light-emitting elements can be reduced by making the thickness of the pixel electrode less than half that of the organic layer or by making the edge of the pixel electrode forward tapered at less than 60 degrees.

[0070] Furthermore, even when the first electrode is a cathode and the second electrode is an anode, a wide color gamut and low-voltage operation are possible by forming an electron transport material and a charge transport layer, and an emitting layer on the charge transport layer.

[0071] organic compound layer The organic compound layer may be formed as a single layer or as multiple layers. When multiple layers are present, they may be referred to as hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc., depending on their functions. The organic compound layer is primarily composed of organic compounds but may also contain inorganic atoms or compounds. The organic compound layer may contain, for example, copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, etc. The organic compound layer may be disposed between the first electrode and the second electrode, or may be disposed in contact with the first electrode and the second electrode. When multiple light-emitting layers are present, a charge generation section may be disposed between the first and second light-emitting layers. The charge generation section may contain an organic compound having a lowest unoccupied molecular orbital energy (LUMO) of -5.0 eV or less. The same applies when a charge generation section is disposed between the second and third light-emitting layers.

[0072] protective layer A protective layer may be provided on the cathode. For example, by adhering glass with a moisture absorbent on the cathode, the penetration of moisture and other contaminants into the organic compound layer can be reduced, thereby reducing the occurrence of display defects. In another embodiment, a passivation layer such as silicon nitride may be provided on the cathode to reduce the penetration of moisture and other contaminants into the organic compound layer. For example, after forming the cathode, the cathode may be transferred to another chamber without breaking the vacuum, and a 2 μm-thick silicon nitride may be formed by CVD to serve as a protective layer. After forming the protective layer by CVD, a protective layer may be formed by atomic layer deposition (ALD). The material of the protective layer formed by ALD is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, or the like. Silicon nitride may be further formed by CVD on the protective layer formed by ALD. The protective layer formed by ALD may have a thickness smaller than that of the protective layer formed by CVD. Specifically, the thickness of the protective layer formed by ALD may be 50% or less, or even 10% or less, of the protective layer formed by CVD.

[0073] Color filters A color filter may be provided on the protective layer. For example, a color filter taking into consideration the size of the organic light-emitting element may be provided on another substrate, and the substrate on which the color filter is formed may be bonded to the substrate on which the organic light-emitting element is provided. Alternatively, for example, a color filter may be patterned on the above-mentioned protective layer using photolithography technology. The color filter may be made of a polymer.

[0074] planarization layer A planarization layer may be disposed between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing the unevenness of the layers below the planarization layer. It may also be called a material resin layer without limiting the purpose. The planarization layer may be composed of an organic compound, and may be a low molecular weight or a high molecular weight. In consideration of reducing the unevenness, a high molecular weight organic compound may be used for the planarization layer.

[0075] The planarization layers may be provided above and below the color filter. In this case, the constituent materials of the planarization layers may be the same or different. Specific examples of the material for the planarization layer include polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0076] Microlenses The organic light-emitting device may have an optical component such as a microlens on its light-emitting side. The microlens may be made of acrylic resin, epoxy resin, or the like. The microlens may be intended to increase the amount of light extracted from the organic light-emitting device or to control the direction of the extracted light. The microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents to the hemisphere, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the hemisphere is the vertex of the microlens. The vertex of the microlens can be determined in the same way in any cross-sectional view. In other words, among the tangents to the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the semicircle is the vertex of the microlens.

[0077] It is also possible to define the midpoint of a microlens. In the cross section of the microlens, a line segment is imagined from the point where an arc shape ends to the point where another arc shape ends, and the midpoint of this line segment can be called the midpoint of the microlens. The cross section for determining the vertex and midpoint may be a cross section perpendicular to the insulating layer.

[0078] The microlens has a first surface having a convex portion and a second surface opposite the first surface. The second surface can be disposed closer to the functional layer (light-emitting layer) than the first surface. To achieve this configuration, it is necessary to form the microlens on the light-emitting device. If the functional layer is an organic layer, high-temperature processes can be avoided in the microlens manufacturing process. Furthermore, if the second surface is disposed closer to the functional layer than the first surface, the glass transition temperatures of the organic compounds constituting the organic layer may all be 100°C or higher, and are preferably, for example, 130°C or higher.

[0079] Counter substrate An opposing substrate may be disposed on the planarization layer. The opposing substrate is called an opposing substrate because it is provided at a position corresponding to the aforementioned substrate. The opposing substrate may be made of the same material as the aforementioned substrate. When the aforementioned substrate is defined as a first substrate, the opposing substrate may be a second substrate.

[0080] organic layer The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light-emitting element according to an embodiment of the present disclosure may be formed by the following method.

[0081] The organic compound layer constituting the organic light-emitting device according to the embodiment of the present disclosure can be formed by dry processes such as vacuum deposition, ionization deposition, sputtering, plasma, etc. Alternatively to the dry process, a wet process can be used in which the compound is dissolved in an appropriate solvent and a layer is formed by a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).

[0082] Here, when a layer is formed by a vacuum deposition method or a solution coating method, crystallization is unlikely to occur and the layer has excellent stability over time. When a film is formed by a coating method, the film can be formed by combining it with an appropriate binder resin.

[0083] Examples of the binder resin include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0084] These binder resins may be used singly or in combination as homopolymers or copolymers, and may further contain known additives such as plasticizers, antioxidants, and ultraviolet absorbers, as needed.

[0085] Pixel circuit The light-emitting device may have a pixel circuit connected to the light-emitting element. The pixel circuit may be an active matrix type that controls the emission of the first light-emitting element and the second light-emitting element independently. The active matrix type circuit may be voltage-programmed or current-programmed. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have a light-emitting element, a transistor that controls the emission brightness of the light-emitting element, a transistor that controls the emission timing, a capacitor that holds the gate voltage of the transistor that controls the emission brightness, and a transistor for connecting to GND without going through the light-emitting element.

[0086] The light-emitting device has a display region and a peripheral region arranged around the display region. The display region has pixel circuits, and the peripheral region has a display control circuit. The mobility of a transistor constituting the pixel circuit may be lower than the mobility of a transistor constituting the display control circuit.

[0087] The slope of the current-voltage characteristics of the transistors that make up the pixel circuit may be smaller than the slope of the current-voltage characteristics of the transistors that make up the display control circuit. The slope of the current-voltage characteristics can be measured using the so-called Vg-Ig characteristics.

[0088] The transistors that make up the pixel circuit are transistors connected to the light-emitting elements, such as the first light-emitting element.

[0089] pixel An organic light emitting device includes a plurality of pixels, each of which includes sub-pixels that emit different colors, for example, RGB colors.

[0090] A pixel has an area called a pixel aperture that emits light. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

[0091] The spacing between the subpixels may be 10 μm or less, and specifically may be 8 μm, 7.4 μm, or 6.4 μm.

[0092] The pixels may be arranged in a known manner in a plan view. For example, they may be in a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement. The shape of the subpixels in a plan view may be any known shape. For example, they may be rectangular, quadrilaterals such as diamonds, or hexagons. Of course, a shape that is close to a rectangle, rather than an exact shape, is included in the rectangle. The shape of the subpixels and the pixel arrangement may be used in combination.

[0093] Uses of the organic light-emitting device according to embodiments of the present disclosure The organic light-emitting device according to the embodiment of the present disclosure can be used as a component of a display device or a lighting device, and can also be used as an exposure light source for an electrophotographic image forming device, a backlight for a liquid crystal display device, or a light-emitting device having a white light source and a color filter.

[0094] The display device may be an image information processing device that has an image input unit that inputs image information from an area CCD, linear CCD, memory card, etc., has an information processing unit that processes the input information, and displays the input image on the display unit.

[0095] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of this touch panel function may be an infrared method, a capacitance method, a resistive film method, or an electromagnetic induction method, and is not particularly limited. The display device may also be used in the display unit of a multifunction printer.

[0096] Next, further explanation will be given with reference to the drawings. Fig. 10(a) shows an example of a pixel PIX arranged in the light-emitting device 100. The pixel has sub-pixels 810 (pixels PIX). The sub-pixels are divided into 810R, 810G, and 810B based on their light emission. The emitted colors may be distinguished by the wavelength of light emitted from the light-emitting layer, or the light emitted from the sub-pixels may be selectively transmitted or color-converted using a color filter or the like. Each sub-pixel has a reflective electrode 802 as a first electrode on an interlayer insulating layer 801, an insulating layer 803 covering the edge of the reflective electrode 802, an organic compound layer 804 covering the first electrode and the insulating layer, a transparent electrode 805 as a second electrode, a protective layer 806, and a color filter 807.

[0097] A transistor and a capacitor may be disposed below or inside the interlayer insulating layer 801. The transistor and the first electrode may be electrically connected via a contact hole (not shown) or the like.

[0098] The insulating layer 803 may also be called a bank or a pixel separation film. The insulating layer 803 covers the edges of the first electrodes and is disposed to surround the first electrodes. The portions of the first electrodes not covered by the insulating layer 803 come into contact with the organic compound layer 804 and become light-emitting regions.

[0099] The organic compound layer 804 includes a hole injection layer 841 , a hole transport layer 842 , a first light-emitting layer 843 , a second light-emitting layer 844 , and an electron transport layer 845 .

[0100] The second electrode may be a transparent electrode, a reflective electrode, or a semi-transparent electrode.

[0101] The protective layer 806 reduces the penetration of moisture into the organic compound layer. Although the protective layer is illustrated as a single layer, it may be a multi-layer structure. Each layer may be an inorganic compound layer and an organic compound layer.

[0102] The color filters 807 are divided into 807R, 807G, and 807B depending on their colors. The color filters may be formed on a planarization film (not shown). A resin protective layer (not shown) may be disposed on the color filters. The color filters may be formed on a protective layer 806. The color filters may be provided on an opposing substrate such as a glass substrate and then bonded thereto.

[0103] A display device 800 in FIG. 10(b) (corresponding to the light-emitting device 100 described above) includes an organic light-emitting element 826 and a TFT 818 as an example of a transistor. A substrate 811 made of glass, silicon, or the like is provided with an insulating layer 812 thereon. An active element such as the TFT 818 is disposed on the insulating layer, and a gate electrode 813, a gate insulating film 814, and a semiconductor layer 815 of the active element are disposed on the insulating layer. The TFT 818 also includes the semiconductor layer 815, a drain electrode 816, and a source electrode 817. An insulating film 819 is provided on the top of the TFT 818. An anode 821 constituting the organic light-emitting element 826 and the source electrode 817 are connected via a contact hole 820 provided in the insulating film.

[0104] The electrical connection between the electrodes (anode, cathode) included in the organic light-emitting element 826 and the electrodes (source electrode, drain electrode) included in the TFT is not limited to the embodiment shown in Figure 10(b). In other words, it is sufficient that either the anode or the cathode is electrically connected to either the TFT source electrode or the drain electrode. TFT stands for thin film transistor.

[0105] 10(b), the organic compound layer is illustrated as a single layer, but the organic compound layer 822 may be a multi-layer structure. A first protective layer 824 and a second protective layer 825 are provided on the cathode 823 to reduce deterioration of the organic light-emitting element.

[0106] In the display device 800 of FIG. 10(b), a transistor is used as the switching element, but other switching elements may be used instead.

[0107] Further, the transistor used in the display device 800 of FIG. 10(b) is not limited to a transistor using a single crystal silicon wafer, and may also be a thin film transistor having an active layer on an insulating surface of a substrate. Examples of the active layer include non-single crystal silicon such as single crystal silicon, amorphous silicon, and microcrystalline silicon, and non-single crystal oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Note that a thin film transistor is also called a TFT element.

[0108] The transistor included in the display device 800 of FIG. 10(b) may be formed in a substrate such as a silicon substrate. Here, forming in the substrate means manufacturing a transistor by processing the substrate itself such as a silicon substrate. That is, having a transistor in the substrate can also be regarded as the substrate and the transistor being integrally formed.

[0109] The organic light-emitting element according to the present embodiment is controlled in emission luminance by a TFT which is an example of a switching element, and an image can be displayed by the respective emission luminances by providing the organic light-emitting elements in a plurality of planes. Here, the switching element according to the present embodiment is not limited to a TFT, and may be a transistor formed of low-temperature polysilicon or an active matrix driver formed on a substrate such as a silicon substrate. Forming on the substrate can also mean forming in the substrate. Whether to provide a transistor in the substrate or use a TFT is selected according to the size of the display portion. For example, if the size is about 0.5 inches, an organic light-emitting element may be provided on a silicon substrate.

[0110] FIG. 11 is a schematic diagram illustrating an example of a display device using the light-emitting device 100 of this embodiment. The display device 1000 may include a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. The touch panel 1003 and the display panel 1005 are connected to flexible printed circuits FPCs 1002 and 1004. Active elements such as transistors are disposed on the circuit board 1007. The battery 1008 may not be disposed if the display device 1000 is not a portable device, and even if it is a portable device, it does not need to be disposed in this position. The light-emitting device 100 can be applied to the display panel 1005. Pixels PIX disposed in the light-emitting device 100 functioning as the display panel 1005 are connected to active elements such as transistors disposed on the circuit board 1007 and operate.

[0111] The display device 1000 shown in FIG. 11 may be used as a display unit of a photoelectric conversion device (which may also be called an imaging device) that has an optical unit with multiple lenses and an imaging element that receives light that has passed through the optical unit and photoelectrically converts it into an electrical signal. The photoelectric conversion device may have a display unit that displays information acquired by the imaging element. The display unit may be a display unit exposed to the outside of the photoelectric conversion device or a display unit located within a viewfinder. The photoelectric conversion device may be a digital camera or a digital video camera.

[0112] FIG. 12 is a schematic diagram illustrating an example of a photoelectric conversion device using the light-emitting device 100 of this embodiment. The photoelectric conversion device 1100 may include a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The photoelectric conversion device 1100 may also be called an imaging device. The light-emitting device 100 of this embodiment can be applied to the viewfinder 1101 or the rear display 1102, which are display units. In this case, the light-emitting device 100 may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the moving speed of the subject, the possibility that the subject will be blocked by an obstruction, and the like.

[0113] Since the timing suitable for capturing an image is often very short, it is better to display information as soon as possible. Therefore, a light emitting device 100 in which pixels PIX including light emitting elements using an organic light emitting material such as an organic EL element are arranged may be used in a viewfinder 1101 or a rear display 1102. This is because organic light emitting materials have a fast response speed. A light emitting device 100 using an organic light emitting material is more suitable than a liquid crystal display device for these devices, which require a high display speed.

[0114] The photoelectric conversion device 1100 has an optical section (not shown). The optical section has multiple lenses, which form an image on a photoelectric conversion element (not shown) housed in a housing 1104 that receives light that has passed through the optical section. The focus of the multiple lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically.

[0115] The light emitting device 100 may be applied to a display unit of an electronic device. In this case, the light emitting device 100 may have both a display function and an operation function. Examples of the portable terminal include a mobile phone such as a smartphone, a tablet, and a head-mounted display.

[0116] FIG. 13 is a schematic diagram showing an example of an electronic device using the light-emitting device 100 of this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit 1202 may be a biometric recognition unit that recognizes a fingerprint to perform unlocking or the like. A portable device having a communication unit can also be called a communication device. The light-emitting device 100 of this embodiment can be applied to the display unit 1201.

[0117] 14(a) and 14(b) are schematic diagrams illustrating an example of a display device using the light-emitting device 100 of this embodiment. FIG. 14(a) illustrates a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The light-emitting device 100 of this embodiment can be applied to the display unit 1302. The display device 1300 may have a base 1303 that supports the frame 1301 and the display unit 1302. The base 1303 is not limited to the form shown in FIG. 14(a). For example, the bottom edge of the frame 1301 may also serve as the base 1303. The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0118] FIG. 14(b) is a schematic diagram illustrating another example of a display device using the light-emitting device 100 of this embodiment. The display device 1310 of FIG. 14(b) is configured to be bendable, and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The light-emitting device 100 of this embodiment can be applied to the first display unit 1311 and the second display unit 1312. The first display unit 1311 and the second display unit 1312 may be a single display unit without any joints. The first display unit 1311 and the second display unit 1312 can be separated by the bending point. The first display unit 1311 and the second display unit 1312 may display different images, or the first display unit and the second display unit 1312 may display a single image.

[0119] FIG. 15 is a schematic diagram illustrating an example of a lighting device using the light-emitting device 100 of this embodiment. The lighting device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. The light-emitting device 100 of this embodiment can be applied to the light source 1402. The optical film 1404 may be a filter that improves the color rendering of the light source. The light diffusion unit 1405 can effectively diffuse light from the light source, such as for lighting up, and deliver the light over a wide area. If necessary, a cover may be provided on the outermost part. The lighting device 1400 may include both the optical film 1404 and the light diffusion unit 1405, or only one of them.

[0120] The lighting device 1400 is, for example, a device that illuminates a room. The lighting device 1400 may emit white, daylight white, or any other color from blue to red. It may have a dimming circuit that adjusts the light intensity. The lighting device 1400 may have a power supply circuit connected to the light emitting device 100 that functions as the light source 1402. The power supply circuit is a circuit that converts AC voltage into DC voltage. White has a color temperature of 4200K, and daylight white has a color temperature of 5000K. The lighting device 1400 may also have a color filter. The lighting device 1400 may also have a heat sink. The heat sink dissipates heat from within the device to the outside, and examples of the heat sink include metal with a high specific heat, liquid silicon, etc.

[0121] FIG. 16 is a schematic diagram of an automobile having a tail lamp, which is an example of a vehicle lamp using the light emitting device 100 of this embodiment. The automobile 1500 may have a tail lamp 1501 that is turned on when the brakes are applied, for example. The light emitting device 100 of this embodiment may be used as a headlamp as a vehicle lamp. An automobile is an example of a mobile body, and the mobile body may be a ship, a drone, an aircraft, a railroad vehicle, an industrial robot, or the like. The mobile body may have a body and a lamp provided thereon. The lamp may indicate the current location of the body.

[0122] The light emitting device 100 of this embodiment can be applied to a tail lamp 1501. The tail lamp 1501 may have a protective member that protects the light emitting device 100 functioning as the tail lamp 1501. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, but may be made of polycarbonate or the like. The protective member may also be made by mixing a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like with polycarbonate.

[0123] The automobile 1500 may have a body 1503 and a window 1502 attached thereto. The window may be a window for checking the front and rear of the automobile, or may be a transparent display such as a head-up display. The light-emitting device 100 of this embodiment may be used in the transparent display. In this case, the constituent materials of the electrodes and the like of the light-emitting device 100 are made of transparent materials.

[0124] 17(a) and 17(b), a further application example of the light emitting device 100 of this embodiment will be described. The light emitting device 100 can be applied to systems that can be worn as a wearable device, such as smart glasses, a head-mounted display (HMD), or smart contact lenses. An image capturing and displaying device used in such an application example has an image capturing device capable of photoelectrically converting visible light and a light emitting device capable of emitting visible light.

[0125] 17(a) illustrates glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front side of a lens 1601 of the glasses 1600. In addition, the light emitting device 100 of this embodiment is provided on the back side of the lens 1601.

[0126] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the light emitting device 100 according to each embodiment. The control device 1603 also controls the operations of the image capture device 1602 and the light emitting device 100. The lens 1601 is formed with an optical system for focusing light onto the image capture device 1602.

[0127] FIG. 17(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 include a control device 1612, which is equipped with an imaging device corresponding to the imaging device 1602 and a light-emitting device 100. A lens 1611 includes an optical system for projecting light emitted from the imaging device in the control device 1612 and the light-emitting device 100, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the imaging device and the light-emitting device 100 and controls the operation of the imaging device and the light-emitting device 100. The control device 1612 may also include a gaze detection unit that detects the gaze of the wearer. Infrared light may be used for gaze detection. The infrared light-emitting unit emits infrared light toward the eyeball of a user gazing at a displayed image. An imaging unit having a light-receiving element detects the emitted infrared light reflected from the eyeball, thereby obtaining an image of the eyeball. By providing a reduction means for reducing the amount of light from the infrared light emitting section to the display section in a plan view, degradation of image quality is reduced.

[0128] The gaze of the user relative to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be used for gaze detection using the image of the eyeball. As an example, a gaze detection method based on the Purkinje image formed by reflection of irradiated light on the cornea can be used.

[0129] More specifically, gaze detection processing is performed based on the pupil-corneal reflex method, which calculates a gaze vector representing the direction (rotation angle) of the eyeball based on the pupil image and Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0130] The light emitting device 100 according to the embodiment of the present disclosure may include an imaging device having a light receiving element, and may control the display image based on user line of sight information from the imaging device.

[0131] Specifically, the light emitting device 100 determines a first field of view area where the user gazes and a second field of view area other than the first field of view area based on the line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the light emitting device 100, or may be determined by an external control device and received. In the display area of ​​the light emitting device 100, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0132] The display area includes a first display area and a second display area different from the first display area, and a high-priority area is determined from the first display area and the second display area based on line-of-sight information. The first display area and the second display area may be determined by a control device of the light-emitting device 100, or may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of areas other than the high-priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0133] Note that AI may be used to determine the first field of view area and areas with high priority. The AI ​​may be a model configured to estimate the angle of gaze and the distance to an object in the line of sight from the image of the eyeball, using as training data an image of the eyeball and the actual direction in which the eyeball in the image was looking. The AI ​​program may be included in the light-emitting device 100, the imaging device, or an external device. If included in an external device, it is transmitted to the light-emitting device 100 via communication.

[0134] When display control is performed based on visual recognition detection, the smart glasses can be applied to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured outside information in real time.

[0135] The disclosure of the present specification includes the following methods for manufacturing a light-emitting device and a semiconductor device.

[0136] (Item 1) A method for manufacturing a light-emitting device including a substrate having an array region in which a plurality of organic light-emitting elements are arranged in an array, and a peripheral region arranged adjacent to the array region, comprising: The exposure step for forming a wiring pattern disposed in the array region and the peripheral region includes: a first exposure step of exposing the array region all at once; a second exposure step, which is different from the first exposure step, in which the peripheral region is exposed in a divided manner; A manufacturing method comprising:

[0137] (Item 2) scanning exposure is used in the first exposure step and the second exposure step; 2. The manufacturing method according to item 1, wherein the scanning direction in the first exposure step and the scanning direction in the second exposure step are different from each other.

[0138] (Item 3) 3. The manufacturing method according to item 1 or 2, wherein the wiring pattern is a signal wiring pattern for passing signals for operating the plurality of organic light-emitting elements.

[0139] (Item 4) 4. The manufacturing method according to any one of items 1 to 3, wherein the first exposure step and the second exposure step are performed using exposure machines with different specifications.

[0140] (Item 5) 5. The manufacturing method according to item 4, wherein the resolution of the exposure machine used in the first exposure step and the resolution of the exposure machine used in the second exposure step are different from each other.

[0141] (Item 6) 6. The manufacturing method according to any one of items 1 to 5, wherein the wiring patterns arranged in the peripheral region include wiring patterns that are smaller than the wiring patterns arranged in the array region.

[0142] (Item 7) 7. The manufacturing method according to any one of items 1 to 6, wherein the wiring pattern contains copper.

[0143] (Item 8) a transistor for driving each of the plurality of organic light-emitting elements; 8. The manufacturing method according to any one of items 1 to 7, wherein the wiring pattern is at least one of a wiring pattern arranged in a wiring layer closest to the gate electrode of the transistor and a wiring pattern arranged in a wiring layer second closest to the gate electrode.

[0144] (Item 9) 9. The manufacturing method according to any one of items 1 to 8, wherein the substrate comprises single crystal silicon.

[0145] (Item 10) 10. The manufacturing method according to any one of items 1 to 9, wherein the center lines of adjacent wiring patterns among the wiring patterns are shifted in the same direction at the boundary between the array region and the peripheral region and at the boundary between the regions divided and exposed in the second exposure step.

[0146] (Item 11) the wiring pattern includes a boundary pattern disposed at a boundary between the array region and the peripheral region or at a boundary between regions that have been divided and exposed in the second exposure step, 11. The manufacturing method according to any one of items 1 to 10, wherein the boundary pattern has a pattern width greater than that of the wiring pattern that is in contact with the boundary pattern.

[0147] (Item 12) 12. The manufacturing method according to any one of items 1 to 11, wherein an alignment mark is arranged at the boundary between the array region and the peripheral region, or at the boundary between the regions divided and exposed in the second exposure step.

[0148] (Item 13) forming at least one optical layer including at least one of a color filter and a microlens; 13. The manufacturing method according to any one of items 1 to 12, wherein the exposure process for forming the optical layer includes a third exposure process for exposing the array region all at once, and a fourth exposure process, which is different from the third exposure process, for exposing the peripheral region in parts.

[0149] (Item 14) Item 14. The manufacturing method according to item 13, wherein the optical layer does not include a pattern spanning the array region and the peripheral region.

[0150] (Item 15) 15. The manufacturing method according to item 13 or 14, wherein the optical layer has an alignment mark in the peripheral region.

[0151] (Item 16) 1. A method for manufacturing a semiconductor device including a substrate having an array region in which a plurality of elements are arranged in an array, and a peripheral region arranged adjacent to the array region, comprising: The exposure step for forming a wiring pattern disposed in the array region and the peripheral region includes: a first exposure step of exposing the array region all at once; a second exposure step, which is different from the first exposure step, in which the peripheral region is exposed in a divided manner; Including, scanning exposure is used in the first exposure step and the second exposure step; A manufacturing method, characterized in that the scanning direction in the first exposure step and the scanning direction in the second exposure step are different from each other.

[0152] (Item 17) Item 17. The manufacturing method according to item 16, wherein each of the plurality of elements is a photoelectric conversion element that converts incident light into an electrical signal.

[0153] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0154] 100: Light emitting device, 104, 106: Wiring patterns, 115: Pixel, 201: Organic light emitting element, 300: Array region, 301: Peripheral region

Claims

1. A method for manufacturing a light-emitting device including a substrate having an array region in which a plurality of organic light-emitting elements are arranged in an array, and a peripheral region arranged adjacent to the array region, comprising: The exposure step for forming a wiring pattern disposed in the array region and the peripheral region includes: a first exposure step of exposing the array region at once; a second exposure step, which is different from the first exposure step, in which the peripheral region is exposed in divided portions; A manufacturing method comprising:

2. scanning exposure is used in the first exposure step and the second exposure step; 2. The manufacturing method according to claim 1, wherein the scanning direction in the first exposure step and the scanning direction in the second exposure step are different from each other.

3. 2. The manufacturing method according to claim 1, wherein the wiring pattern is a signal wiring pattern for transmitting signals for operating the plurality of organic light-emitting elements.

4. 2. The manufacturing method according to claim 1, wherein the first exposure step and the second exposure step are performed using exposure machines with different specifications.

5. 5. The manufacturing method according to claim 4, wherein the resolution of an exposure machine used in the first exposure step is different from the resolution of an exposure machine used in the second exposure step.

6. 2. The manufacturing method according to claim 1, wherein the wiring patterns arranged in the peripheral region include wiring patterns that are smaller than the wiring patterns arranged in the array region.

7. 2. The manufacturing method according to claim 1, wherein the wiring pattern contains copper.

8. a transistor for driving each of the plurality of organic light-emitting elements; 2. The manufacturing method according to claim 1, wherein the wiring pattern is at least one of a wiring pattern arranged in a wiring layer closest to a gate electrode of the transistor and a wiring pattern arranged in a wiring layer second closest to the gate electrode.

9. The method of claim 1 wherein the substrate comprises single crystal silicon.

10. 2. The manufacturing method according to claim 1, wherein the center lines of adjacent wiring patterns among the wiring patterns are shifted in the same direction at the boundary between the array region and the peripheral region and at the boundary between the regions divided and exposed in the second exposure step.

11. the wiring pattern includes a boundary pattern disposed at a boundary between the array region and the peripheral region or at a boundary between regions that have been divided and exposed in the second exposure step, 2. The manufacturing method according to claim 1, wherein the boundary pattern has a pattern width greater than that of the wiring pattern adjacent to the boundary pattern.

12. 2. The manufacturing method according to claim 1, wherein an alignment mark is arranged at the boundary between the array region and the peripheral region, or at the boundary between regions that are divided and exposed in the second exposure step.

13. forming at least one optical layer including at least one of a color filter and a microlens; 2. The manufacturing method according to claim 1, wherein the exposure process for forming the optical layer includes a third exposure process for exposing the array region all at once, and a fourth exposure process, separate from the third exposure process, for exposing the peripheral region in parts.

14. The manufacturing method according to claim 13 , wherein the optical layer does not include a pattern spanning the array region and the peripheral region.

15. The method of claim 13 , wherein the optical layer has alignment marks in the peripheral region.

16. 1. A method for manufacturing a semiconductor device including a substrate having an array region in which a plurality of elements are arranged in an array, and a peripheral region arranged adjacent to the array region, comprising: The exposure step for forming a wiring pattern disposed in the array region and the peripheral region includes: a first exposure step of exposing the array region at once; a second exposure step, which is different from the first exposure step, in which the peripheral region is exposed in divided portions; Including, scanning exposure is used in the first exposure step and the second exposure step; A manufacturing method, characterized in that the scanning direction in the first exposure step and the scanning direction in the second exposure step are different from each other.

17. 17. The manufacturing method according to claim 16, wherein each of the plurality of elements is a photoelectric conversion element that converts incident light into an electrical signal.

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