Display device

Abstract

To provide a display device with high functionality, and a display device with an imaging function.SOLUTION: A display device includes a first pixel circuit including a light-receiving element and a first transistor, and a second pixel circuit including a light-emitting element and a second transistor. The light-receiving element includes an active layer between a first pixel electrode and a common electrode. The light-emitting element includes a light-emitting layer between a second pixel electrode and the common electrode. The first pixel electrode and the second pixel electrode exist on the same surface. The active layer and the light-emitting layer contain different organic compounds. The first transistor has a source or a drain electrically connected to the first pixel electrode, and the second transistor has a source or a drain electrically connected to the second pixel electrode. The first transistor includes a first semiconductor layer containing metal oxide and the second transistor includes a second semiconductor layer containing polycrystalline silicon.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] 1. Field of the Invention The present invention relates to a display device. 1. Field of the Invention The present invention relates to a display device having an imaging function. Regarding.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, and the like. , electronic device, lighting device, input device, input / output device, driving method thereof, or manufacturing method thereof Semiconductor devices function by utilizing the semiconductor properties. This refers to all devices that can do this. [Background technology]

[0003] In recent years, display devices have become increasingly popular in smartphones, tablet devices, and notebook PCs (personal computers). Computers), television equipment, monitors, and other devices. Recently, it has also been used as a touch panel or to capture fingerprints for authentication. There is a demand for display devices that not only display images but also have various functions added, such as the ability to are.

[0004] As a display device, a light-emitting device having a light-emitting element has been developed. Light emission using the electroluminescence (EL) phenomenon Optical elements (also written as EL elements) are easy to make thin and lightweight, and can respond quickly to input signals. It has features such as being capable of being driven by a low-voltage DC power supply, and is applied to display devices. For example, Patent Document 1 discloses a flexible light-emitting device to which an organic EL element is applied. It has been disclosed. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-197522 Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one embodiment of the present invention is to provide a display device having an imaging function. An object of one embodiment of the present invention is to provide a display device with high functionality. An object of the present invention is to provide a display device that can realize a display with high display quality. An object of one embodiment is to provide a display device capable of capturing a good image.

[0007] The description of these problems does not preclude the existence of other problems. It is not necessary for one embodiment to solve all of these problems. The subject matter can be extracted from the description, drawings, claims, etc. [Means for solving the problem]

[0008] One embodiment of the present invention is a display device including a first pixel circuit and a second pixel circuit. The first pixel circuit has a light receiving element and a first transistor. The second pixel circuit has a light emitting element. The light receiving element has a first pixel electrode, an active layer, and a common electrode. The light-emitting element has a second pixel electrode, a light-emitting layer, and a common electrode. The electrode and the second pixel electrode are located on the same plane. The active layer is located on the first pixel electrode. The light-emitting layer is located on the second pixel electrode and contains the first organic compound. The common electrode is connected to the first pixel electrode through the active layer. The first transistor has an overlapping portion and a portion overlapping with the second pixel electrode via the light-emitting layer. The transistor has one of a source and a drain electrically connected to the first pixel electrode, and a second transistor One of the source and drain of the transistor is electrically connected to the second pixel electrode. The first transistor and the second transistor each have a semiconductor layer made of polycrystalline silicon.

[0009] In the above, the first transistor and the second transistor are each a semiconductor. It is preferable to have a first gate and a second gate that overlap with each other via a layer. Preferably, the first gate and the second gate are electrically connected.

[0010] Another embodiment of the present invention is a display device including a first pixel circuit and a second pixel circuit. The first pixel circuit has a light receiving element and a first transistor. The light-receiving element includes a first pixel electrode, an active layer, a second transistor, and a light-emitting element. The light-emitting element has a second pixel electrode, a light-emitting layer, and a common electrode. The first pixel electrode and the second pixel electrode are located on the same plane. The light-emitting layer is located on the second pixel electrode and has a first organic compound. The common electrode is connected to the first organic compound via the active layer. The first pixel electrode has a portion overlapping the pixel electrode and a portion overlapping the second pixel electrode via the light-emitting layer. One of the source and the drain of the first transistor is electrically connected to the first pixel electrode, The second transistor has one of a source and a drain electrically connected to the second pixel electrode. The first transistor has a first semiconductor layer including a metal oxide, and the second transistor The capacitor has a second semiconductor layer including polycrystalline silicon.

[0011] In the above, the first transistor has a third gate electrode located on the first semiconductor layer. and a fourth gate overlapping the third gate via the first semiconductor layer. Preferably, the second transistor further comprises a fifth gate located on the second semiconductor layer; and a sixth gate overlapping the fifth gate via the second semiconductor layer. In this case, the fourth gate and the fifth gate are located on the same plane and made of the same metal element. It is preferred that the compound contains:

[0012] In the above, the source and drain of the first transistor and the second transistor The source and drain of the transistor are preferably located on the same plane and contain the same metal element. Desirable.

[0013] In the above, it is preferable to further have a common layer. In this case, the common layer is A portion overlapping the active layer between the first pixel electrode and the common electrode, and a portion overlapping the active layer between the second pixel electrode and the common electrode It is preferable that the light-emitting layer has a portion overlapping the light-emitting layer therebetween.

[0014] Alternatively, in the above, it is preferable to have a first common layer and a second common layer. When the first common layer is formed, the first common layer has a portion located between the first pixel electrode and the active layer and a portion located between the second pixel electrode and the active layer. The second common layer preferably has a portion located between the electrode and the light-emitting layer. a portion located between the active layer and the common electrode, and a portion located between the light-emitting layer and the common electrode; It is preferred that the compound has the following structure:

[0015] In the above, it is preferable that the first pixel circuit has a third transistor. In this case, the third transistor preferably has a semiconductor layer made of polycrystalline silicon. .

[0016] In the above, the second pixel circuit preferably includes a fourth transistor. In this case, the fourth transistor preferably has a metal oxide in a semiconductor layer.

[0017] In the above, it is preferable to have a first substrate and a second substrate. The first transistor and the second transistor are located between the first substrate and the second substrate. It is preferable that the first pixel electrode is located between the first transistor and the second substrate. and the second pixel electrode is preferably located between the second transistor and the second substrate. Furthermore, it is preferable that the first substrate and the second substrate each have flexibility.

[0018] Another aspect of the present invention is a display device comprising: any one of the above display devices; a connector or an integrated circuit; and a display module having a path.

[0019] Another embodiment of the present invention is a display device including the display module, an antenna, a battery, a housing, a cover, and the like. and at least one of a camera, a speaker, a microphone, and an operation button. is. [Effects of the Invention]

[0020] According to one embodiment of the present invention, a display device having an imaging function can be provided. Alternatively, a display device that can realize a high-quality display can be provided. Alternatively, a display device capable of capturing a good image can be provided.

[0021] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have to have all of these effects. can be extracted from descriptions in the specification, drawings, claims, etc. [Brief explanation of the drawings]

[0022] [Figure 1] Fig. 1(A) is a diagram showing a configuration example of a display device, and Fig. 1(B) and Fig. 1(C) are circuit diagrams of pixel circuits. [Figure 2] 2A and 2B are timing charts illustrating a method for driving a display device. [Figure 3] 3(A) and 3(B) are circuit diagrams of pixel circuits. [Figure 4] 4A to 4C are circuit diagrams of pixel circuits. [Figure 5] 5(A) and 5(B) are schematic cross-sectional views of the display device. [Figure 6] 6(A) and 6(B) are schematic cross-sectional views of the display device. [Figure 7] 7(A), 7(B), 7(D), 7(F) to 7(H) are diagrams showing examples of the configuration of a display device, and FIGS. 7(C) and 7(E) are diagrams showing examples of images. [Figure 8] 8A to 8D are diagrams illustrating configuration examples of display devices. [Figure 9] 9A to 9C are diagrams illustrating examples of the configuration of a display device. [Figure 10] 10A and 10B are diagrams illustrating a configuration example of a display device. [Figure 11] 11A to 11C are diagrams illustrating a configuration example of a display device. [Figure 12]FIG. 12 is a diagram illustrating an example of the configuration of a display device. [Figure 13] FIG. 13 is a diagram illustrating an example of the configuration of a display device. [Figure 14] FIG. 14 is a diagram illustrating an example of the configuration of a display device. [Figure 15] Fig. 15(A) is a diagram illustrating an example of the configuration of a display system, and Fig. 15(B) and Fig. 15(C) are diagrams illustrating an example of how the display system is used. [Figure 16] 16(A) and 16(B) are diagrams showing configuration examples of electronic devices. [Figure 17] 17A to 17D are diagrams showing configuration examples of electronic devices. [Figure 18] 18A to 18F are diagrams showing configuration examples of electronic devices. DETAILED DESCRIPTION OF THE INVENTION

[0023] Hereinafter, embodiments will be described with reference to the drawings. It is understood that the present invention may be embodied in various different forms without departing from its spirit and scope. It will be readily apparent to those skilled in the art that various modifications may be made to the embodiments and details of the present invention. However, the present invention should not be construed as being limited to the description of the following embodiments.

[0024] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be assigned.

[0025] In each drawing described in this specification, the size of each component, the thickness of a layer, or the area The figures may be exaggerated for clarity and are not necessarily limited to that scale. I can't.

[0026] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The number is not a numerical limitation.

[0027] A transistor is a type of semiconductor device that has the function of amplifying current or voltage and conducting electricity. Alternatively, a switching operation for controlling non-conduction can be realized. The transistor is an IGFET (Insulated Gate Field Effect Transistor). ct Transistor) and thin film transistor (TFT) transistor).

[0028] In addition, the functions of "source" and "drain" can be different when using transistors with different polarities. Or, when the direction of the current changes during circuit operation, the positions may be reversed. Therefore, in this specification, the terms "source" and "drain" are used interchangeably. It is possible to do so.

[0029] In addition, in this specification, "electrically connected" means "something that has some kind of electrical effect." This includes cases where the device is connected via a "of" is not subject to any particular restrictions as long as it allows the transmission and reception of electrical signals between connected objects. For example, "something that has some kind of electrical action" includes electrodes, wiring, and transistors. It has various functions such as switching elements such as resistors, coils, and capacitors. This includes elements, etc.

[0030] In this specification, a display panel, which is one aspect of a display device, displays (outputs) an image or the like on a display surface. Therefore, a display panel is one aspect of an output device.

[0031] In this specification, the substrate of the display panel is provided with, for example, an FPC (Flexible Printed Circuit). Integrated Circuit) or TCP (Tape Carrier Packa ge) or a connector such as COG (Chip On Ground) is attached to the board. The IC mounted on the display panel module is called a display module. It may also be called a display panel or simply a display panel.

[0032] In this specification and the like, a touch panel, which is one aspect of a display device, is a device for displaying images and the like on a display surface. The function of the display is to detect when a finger or stylus touches, presses, or has the function of a touch sensor that detects approaching. The panel is one aspect of an input / output device.

[0033] The touch panel is, for example, a display panel (or display device) with a touch sensor, A touch panel can also be called a display panel (or display device) with a touch function. Alternatively, the display panel may have a touch sensor panel. It may also be configured to have a touch sensor function inside or on the surface.

[0034] In addition, in this specification, a connector or an IC is mounted on the substrate of the touch panel. These are called touch panel modules, display modules, or simply touch panels. There may be cases where this happens.

[0035] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described.

[0036] A display device according to one embodiment of the present invention includes a light-receiving element (also referred to as a light-receiving device) and a light-emitting element. The display unit has light-emitting elements arranged in a matrix. The light-emitting element can be used to display an image on the display unit. The light receiving elements are arranged in a matrix, and the display unit functions as a light receiving unit. Since the image can be captured by the plurality of light receiving elements provided, the display device It can function as a touch panel or a display. It is possible to capture an image and detect the proximity or contact of an object (such as a finger or pen). Furthermore, the light emitting element provided in the display section can be used as a light source when receiving light. Therefore, there is no need to provide a light source separately from the display device, and the number of components in the electronic device can be reduced. Therefore, a highly functional display device can be realized.

[0037] One embodiment of the present invention is a display device that receives light from a light-emitting element included in a display portion when the light is reflected by an object. The device can detect the reflected light, enabling imaging and touch (including non-contact) detection even in dark environments. This can be done.

[0038] In addition, in the display device of one embodiment of the present invention, when a finger or a palm is brought into contact with the display portion, a fingerprint is generated. For this reason, an electronic device equipped with the display device according to one aspect of the present invention can be used. The device can perform personal authentication using the captured fingerprint. There is no need to install a separate image capture device for ID or palm print authentication, reducing the number of electronic device parts. In addition, since the light receiving elements are arranged in a matrix on the display unit, It is possible to take images of fingerprints or palm prints anywhere in the home, providing a highly convenient It is possible to realize a child device.

[0039] The light-emitting element is an OLED (Organic Light Emitting Diode). ode) or QLED (Quantum-dot Light Emitting Diode) It is preferable to use an EL element such as an EL element (e.g., a luminescent element). , fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescence The material exhibiting thermally activated delayed fluorescence (TDF) d fluorescence (TADF) materials), inorganic compounds (quantum dot materials, etc.) In addition, as a light emitting element, micro LED (Light Emitting Diode) LEDs such as LEDs (LEDs) can also be used.

[0040] As the light receiving element, for example, a pn-type or pin-type photodiode can be used. The light receiving element acts as a photoelectric conversion element that detects the light incident on the light receiving element and generates an electric charge. The amount of charge generated by a photoelectric conversion element is determined according to the amount of incident light. As the light receiving element, it is preferable to use an organic photodiode having a layer containing an organic compound. Organic photodiodes are easy to make thin, lightweight, and large in area, and are also easy to form. The high degree of freedom in shape and design allows it to be applied to a variety of display devices.

[0041] The light-emitting element can have, for example, a stacked structure including a light-emitting layer between a pair of electrodes. The light receiving element may have a laminated structure including an active layer between a pair of electrodes. The active layer can be made of a semiconductor material, such as an inorganic semiconductor material such as silicon. can be used.

[0042] It is also preferable to use an organic compound in the active layer of the light-receiving element. It is preferable that one electrode (also called a pixel electrode) of each of the light receiving element and the light receiving element is provided on the same surface. Furthermore, the other electrode of the light emitting element and the light receiving element is preferably formed from one continuous conductive layer. It is more preferable that the light emitting element and the light receiving element are connected to each other through an electrode (also called a common electrode). It is more preferable that the light emitting element and the light receiving element have a common layer. This simplifies the manufacturing process, reduces manufacturing costs, and improves manufacturing yield. It is possible.

[0043] Here, the display unit includes a first pixel circuit including a light receiving element and one or more transistors; A light emitting element and a second pixel circuit having one or more transistors are arranged in a matrix. The configuration may be such that the sensor is disposed in the

[0044] In a display device according to one embodiment of the present invention, a first pixel circuit having a light-receiving element and a light-emitting element All of the transistors included in the second pixel circuit have a semiconductor in which a channel is formed. It is preferable to use a transistor having a silicon layer. Examples include silicon, polycrystalline silicon, and amorphous silicon. LTPS (Low Temperature Poly Silicon) It is preferable to use a transistor having a low-temperature polysilicon (LTPS) transistor. LTPS transistors have high field-effect mobility and good frequency characteristics.

[0045] By applying silicon transistors such as LTPS transistors, high frequency Circuits that need to be driven multiple times (such as source driver circuits) are created on the same board as the display unit. This simplifies the external circuitry mounted on the display device, reducing component costs. This can reduce costs, implementation costs, etc.

[0046] In addition, at least one of the transistors included in the first pixel circuit and the second pixel circuit A semiconductor layer in which a channel is formed has a metal oxide (hereinafter also referred to as an oxide semiconductor). It is preferable to use an OS transistor (hereinafter also referred to as an OS transistor). The field-effect mobility of OS transistors is extremely high compared to amorphous silicon. The source-drain leakage current in the off state (hereinafter referred to as the off current) The capacitance of the transistor is extremely small, and the charge stored in the capacitor connected in series with the transistor can be discharged for a long period of time. Furthermore, by using an OS transistor, Power consumption can be reduced.

[0047] The first pixel circuit and the second pixel circuit include a part of the transistors that are LTPS transistors. By using a MOSFET in the LTC3111 and OS transistors in the other parts, power consumption is low and the driving capability is high. As a more preferable example, a display device that controls the conduction and non-conduction of wiring can be realized. OS transistors are used for transistors that function as switches to control It is preferable to use LTPS transistors for current control transistors and the like.

[0048] One of the transistors (first transistor) provided in the first pixel circuit is a light receiving element It functions as a transistor for transferring the charge generated in the source of the transistor. One of the source and drain is electrically connected to the pixel electrode of the light-receiving element.

[0049] In addition, one of the transistors (second transistor) provided in the second pixel circuit is a light emitting transistor. It functions as a transistor for controlling the current flowing through the optical element. One of the source and the drain is electrically connected to a pixel electrode of the light-emitting element.

[0050] Here, the first transistor and the second transistor are LTPS transistors. This reduces the time required for transferring charges in the first pixel circuit. In addition, the current flowing through the light emitting element in the second pixel circuit can be increased. Cut.

[0051] Alternatively, an OS transistor is applied to the first transistor and an LT transistor is applied to the second transistor. It is preferable to use a PS transistor. This reduces the leakage current between the optical element and the storage node, enabling low-noise, high-quality imaging. In addition, since the charge can be held in the holding node for a long time, global shutter driving is possible. In addition, it is possible to increase the current flowing through the light emitting element in the second pixel circuit. I can listen.

[0052] A more specific configuration example will be described below with reference to the drawings.

[0053] [Example of display device configuration] 1A shows a block diagram of a display device 10. The display device 10 includes a display unit 11, a driving The image forming apparatus includes a circuit section 12, a drive circuit section 13, a drive circuit section 14, a circuit section 15, and the like.

[0054] The display unit 11 has a plurality of pixels 30 arranged in a matrix. The sub-pixel 21R, the sub-pixel 21G, the sub-pixel 21B, and the imaging pixel 22. The pixel 21G and the sub-pixel 21B each have a light-emitting element that functions as a display element. The pixel 22 has a light receiving element that functions as a photoelectric conversion element.

[0055] The pixel 30 includes a line GL, a line SLR, a line SLG, a line SLB, a line TX, a line SE, It is electrically connected to the wiring RS and the wiring WX. The wiring LB is electrically connected to the drive circuit unit 12. The wiring GL is electrically connected to the drive circuit unit 13. The drive circuit section 12 includes a source line drive circuit (also called a source driver). The driving circuit unit 13 functions as a gate line driving circuit (also called a gate driver). It works like this.

[0056] The pixel 30 includes a subpixel 21R, a subpixel 21G, and a subpixel 21B. The sub-pixel 21R is a sub-pixel that exhibits red, the sub-pixel 21G is a sub-pixel that exhibits green, and The sub-pixel 21B is a sub-pixel that exhibits blue. This allows the display device 10 to display full color. Although an example in which the pixel 30 has three sub-pixels of different colors has been shown here, it is also possible to use a pixel having four sub-pixels of different colors. The pixel may have more than one sub-pixel.

[0057] The sub-pixel 21R has a light-emitting element that emits red light. The sub-pixel 21G has a light-emitting element that emits green light. The sub-pixel 21B has a light-emitting element that emits blue light. The pixel 30 may have sub-pixels with light-emitting elements that emit light of other colors. 30 is a subpixel having a light-emitting element that emits white light in addition to the above three subpixels, or It may also have a sub-pixel having a light-emitting element that emits yellow light.

[0058] The wiring GL is connected to the sub-pixels 21R, 21G, and and the subpixel 21B. are the sub-pixels 21R and 21L arranged in the column direction (extension direction of the wiring SLR, etc.), respectively. G, or sub-pixel 21B.

[0059] The imaging pixel 22 included in the pixel 30 has a wiring TX, a wiring SE, a wiring RS, and a wiring WX. The wiring TX, wiring SE, and wiring RS are electrically connected to the drive circuit unit 14. The wiring WX is electrically connected to the circuit section 15.

[0060] The drive circuit unit 14 generates signals for driving the imaging pixels 22, and transmits the signals to the wirings SE and T The circuit section 15 has a function of outputting the signal to the imaging pixel 22 via the signal lines X and RS. Receives a signal output from element 22 via wiring WX and outputs it to the outside as image data. The circuit section 15 functions as a readout circuit.

[0061] [Pixel circuit configuration example 1] FIG. 1B shows the configuration of the subpixel 21R, the subpixel 21G, and the subpixel 21B. 1 shows an example of a circuit diagram of a pixel 21 that can be used. The pixel 21 includes a transistor M1, a transistor M 2, a transistor M3, a capacitor C1, and a light-emitting element EL. The line GL and the wiring SL are electrically connected. The wiring SL is the same as the wiring SLR shown in FIG. , wiring SLG, and wiring SLB.

[0062] The transistor M1 has a gate electrically connected to the wiring GL and a source and a drain One end is electrically connected to the wiring SL, and the other end is connected to one electrode of the capacitor C1 and the transistor M2. The transistor M2 has a source and a drain that are electrically connected to the wiring. AL, and the other of the source and drain is one electrode of the light-emitting element EL, The other electrode of C1 and one of the source and drain of the transistor M3 are electrically connected. The transistor M3 has a gate electrically connected to the wiring GL and a source and a drain The other electrode of the light-emitting element EL is electrically connected to the wiring CL. are connected to the network.

[0063] The transistors M1 and M3 function as switches. 2 functions as a transistor for controlling the current flowing through the light-emitting element EL.

[0064] Here, LTPS transistors are used for all of the transistors M1 to M3. Alternatively, it is preferable to use an OS transistor as the transistor M1 and the transistor M3. It is preferable to use a LTPS transistor as the transistor M1.

[0065] As an OS transistor, a transistor using an oxide semiconductor in the semiconductor layer where the channel is formed is used. The semiconductor layer may be made of, for example, indium and M (M is gallium). Sm, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium Sodium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, selected from the group consisting of sodium, neodymium, hafnium, tantalum, tungsten, and magnesium; It is preferable that M is aluminum. It is preferable that the metal is one or more selected from the group consisting of gallium, yttrium, and tin. In particular, a semiconductor layer of an OS transistor contains indium, gallium, and zinc. It is preferable to use indium tin oxide (also referred to as IGZO). It is preferable to use an oxide containing zinc. Alternatively, an oxide containing indium, gallium, tin, and It is preferable to use an oxide containing zinc.

[0066] It uses oxide semiconductors that have a wider band gap than silicon and a lower carrier density. Such a transistor can achieve extremely low off-state current. The low off-state current allows the charge stored in the capacitor connected in series with the transistor to be released for a long period of time. Therefore, the transistor connected in series to the capacitor C1 The transistors M1 and M3 are each made of an oxide semiconductor. It is preferable that the transistors M1 and M3 include an oxide semiconductor. By applying a transistor with a capacitance of 1, the charge held in the capacitor C1 is transferred to the transistor M1 or This prevents the current from leaking through the transistor M3. Since the charge can be held for a long time, the data of pixel 21 can be written without being rewritten. Therefore, it becomes possible to display a still image for a long period of time.

[0067] A data potential D is applied to the wiring SL. A selection signal is applied to the wiring GL. The selection signal includes a potential that makes the transistor conductive and a potential that makes the transistor non-conductive. do.

[0068] A reset potential is applied to the wiring RL, and an anode potential is applied to the wiring AL. A cathode potential is applied to the wiring CL. In the pixel 21, the anode potential is applied to the cathode The reset potential applied to the wiring RL is set to a potential higher than the reset potential. The potential difference between the cathode potential and the cathode potential is set to be smaller than the threshold voltage of the light-emitting element EL. The reset potential can be a potential higher than the cathode potential, or a potential equal to or lower than the cathode potential. It can be at the same potential or a potential lower than the cathode potential.

[0069] The subpixels 21R, 21G, and 21B shown in FIG. 1A are configured as follows: An example of a driving method when the above is applied will be described using the timing chart shown in FIG. In FIG. 2(A), the wiring GL, the wiring SLR, the wiring SLG, and the wiring SLB are shown. 1 shows an example of a signal input to the

[0070] <Before time T11> Before time T11, the subpixels 21R, 21G, and 21B are in a non-selected state. Before time T11, the transistors M1 and M3 are connected to the wiring GL. A potential (here, a low-level potential) is applied to make the transistor non-conductive.

[0071] <Period T11-T12> The period from time T11 to time T12 corresponds to the period during which data is written to the pixels. At T11, a current that turns on the transistors M1 and M3 is applied to the wiring GL. A potential (here, a high level potential) is given to the wiring SLR, the wiring SLG, and the wiring SLB. In each case, the data potential D R , data potential D G , data potential D B At this time, The transistor M1 is turned on, and the wiring SLR and the wiring SLG are connected to the gate of the transistor M2. Alternatively, a data potential is applied from the wiring SLB. A reset potential is applied to one electrode of the light-emitting element EL from the wiring RL. It is possible to prevent the light emitting element EL from emitting light during the writing period.

[0072] <After time T12> The period from time T12 onwards corresponds to the write period for the next row. A potential is applied to the line GL to turn off the transistors M1 and M3. The transistor M1 and the transistor M3 are in a non-conductive state. A current corresponding to the gate potential of 2 flows to the light-emitting element EL, and the light-emitting element EL emits light at a desired brightness. do.

[0073] The above is a description of an example of a method for driving the pixel 21.

[0074] [Pixel circuit configuration example 2] FIG. 1C shows an example of a circuit diagram of the imaging pixel 22. The imaging pixel 22 includes a transistor M 5. Transistor M6, transistor M7, transistor M8, capacitor C2, and light-receiving element I have PD.

[0075] The transistor M5 has a gate electrically connected to the wiring TX and a source and a drain The source and drain are electrically connected to the anode electrode of the light receiving element PD, and the other of the source and drain is One of the source and drain of the transistor M6, the first electrode of the capacitor C2, and the transistor The gate of the transistor M6 is electrically connected to the wiring RS. The other of the source and drain is electrically connected to the wiring V1. The transistor M7 has one of its source and drain electrically connected to the wiring V3. The other of the drain and the source is electrically connected to one of the source and drain of the transistor M8. The transistor M8 has a gate electrically connected to the wiring SE, and a source and a drain The other end of the input is electrically connected to the wiring WX. The cathode electrode of the light receiving element PD is The second electrode of the capacitor C2 is electrically connected to the wiring V2. are.

[0076] Transistor M5, transistor M6, and transistor M8 function as switches. The transistor M7 functions as an amplifying element (amplifier).

[0077] By applying LTPS transistors to all of the transistors M5 to M8, Alternatively, the transistors M5 and M6 may be OS transistors. It is preferable to use an LTPS transistor for the transistor M7. The transistor M8 is either an OS transistor or an LTPS transistor. That's fine.

[0078] By using OS transistors for the transistors M5 and M6, The potential held at the gate of transistor M7 is determined based on the charge generated in transistor PD. This prevents leakage through transistor M5 or transistor M6.

[0079] For example, when capturing an image using the global shutter method, the charge transfer motion is The period from the end of the charge transfer operation to the start of the readout operation (charge retention period) differs. So, when capturing an image in which all pixels have the same gradation value, ideally, The output signals have the same potential value. However, the length of the charge retention period differs for each row. In this case, the charge stored in the nodes of the pixels in each row leaks over time. The potential of the pixel output signal differs for each row, and the number of gray levels varies for each row. Therefore, the OS transistors M5 and M6 are used as the transistors M6. By applying a resistor, the potential change of the pixel node can be made extremely small. That is, even if imaging is performed using the global shutter method, the charge retention period differs. To minimize changes in the gradation of image data caused by the above phenomenon and improve the quality of captured images. can be done.

[0080] On the other hand, transistor M7 is an LTPS transistor that uses low-temperature polysilicon in the semiconductor layer. It is preferable to use LTPS transistors rather than OS transistors. High field effect mobility can be achieved, and the driving capability and current capability are excellent. The transistor M7 operates faster than the transistors M5 and M6. By using an LTPS transistor for the transistor M7, the photodetector P The output operation corresponding to the minute potential based on the amount of light received by D is quickly performed on transistor M8. It is possible to do so.

[0081] That is, in the imaging pixel 22, the transistors M5 and M6 have a leakage current The transistor M7 has a high driving capability, so the light is received by the photodetector PD and the transistor The charge transferred via transistor M5 can be held without leakage and can be read at high speed. It is possible to perform a write operation.

[0082] The transistor M8 functions as a switch that passes the output from the transistor M7 to the wiring WX. In order to function as a transistor, a small off-state current and a high speed are required, like the transistors M5 to M7. Therefore, the semiconductor layer of the transistor M8 is made of low-temperature polysilicon. Silicon or an oxide semiconductor may be used.

[0083] In FIG. 1B and FIG. 1C, the transistor is an n-channel transistor. However, a p-channel transistor can also be used.

[0084] The transistors of the pixel 21 and the imaging pixel 22 are formed side by side on the same substrate. It is preferable that this be done.

[0085] Regarding an example of a method for driving the imaging pixel 22 shown in FIG. 1C, the timing shown in FIG. 2B is 2B shows a wiring TX, a wiring SE, a wiring RS, and a wiring The signal input to the line WX is shown.

[0086] <Before time T21> Before time T21, a low-level potential is applied to the wiring TX, the wiring SE, and the wiring RS. In addition, the wiring WX is in a state where no data is being output, and is at a low level here. A predetermined potential may be applied to the wiring WX.

[0087] <Period T21-T22> At time T21, a potential (which turns on the transistor) is applied to the wiring TX and the wiring RS. In this case, a high-level potential is applied to the wiring SE. A potential (here, a low-level potential) is applied.

[0088] At this time, transistors M5 and M6 are turned on, and the line V1 The photodiode PD is connected to the anode electrode of the photodiode PD via transistors M6 and M5. A potential lower than that of the cathode electrode is applied to the light receiving element PD. The pressure is applied.

[0089] The potential of the wiring V1 is also supplied to the first electrode of the capacitor C2, and the capacitor C2 is charged. This is the state.

[0090] The period T21-T22 can also be called a reset (initialization) period.

[0091] <Period T22-T23> At time T22, a low-level potential is applied to the wiring TX and the wiring RS. As a result, the transistors M5 and M6 are brought into a non-conductive state.

[0092] Since the transistor M5 is in a non-conducting state, a reverse bias voltage is applied to the photodetector PD. Here, photoelectric conversion occurs when light is incident on the photodetector PD. , charges are accumulated in the anode electrode of the light receiving element PD.

[0093] The period T22-T23 can also be called an exposure period. It can be set according to the sensitivity, the amount of incident light, etc., but at least compared to the reset period It is preferable to set a sufficiently long period.

[0094] During the period T22-T23, the transistors M5 and M6 are non-conductive. Therefore, the potential of the first electrode of the capacitor C2 is the low level voltage supplied from the wiring V1. The position is maintained.

[0095] <Period T23-T24> At time T23, a high-level potential is applied to the wiring TX. The charge stored in the photodetector PD is transferred to the photodiode PD through the transistor M5. This transfers the voltage to the first electrode of the capacitor C2. The potential of the node rises according to the amount of charge accumulated in the light-receiving element PD. The gate of the transistor M7 is supplied with a potential corresponding to the amount of exposure of the light receiving element PD.

[0096] <Period T24-T25> At time T24, a low level potential is applied to the wiring TX. The node to which the gate of transistor M7 is connected becomes floating. Since the light receiving element PD is always exposed, the After the transfer operation is completed, transistor M5 is turned off, This can prevent the potential of the node to which the gate of transistor M7 is connected from changing.

[0097] <Period T25-T26> At time T25, a high level potential is applied to the wire SE. The period T25-T26 can also be called a readout period. .

[0098] For example, the transistor M7 and the transistor included in the circuit unit 15 form a source follower circuit. In this case, the data potential output to the wiring WX is D S is determined depending on the gate potential of the transistor M7. The potential obtained by subtracting the threshold voltage of the transistor M7 from the gate potential of the transistor M7 is the data potential. rank D S The potential is output to the wiring WX as a readout signal, and the readout signal is read out by a readout circuit included in the circuit portion 15. It is revealed.

[0099] The transistor M7 and the transistor included in the circuit unit 15 form a source ground circuit. Moreover, the data can also be read out by the read circuit that the circuit unit 15 has.

[0100] <After time T26> At time T26, a low level potential is applied to the line SE. This completes the reading of the data from the imaging pixel 22. After time T26, the data read operation for the next row and onward is carried out in sequence.

[0101] By using the driving method shown in Figure 2(B), the exposure period and readout period can be set separately. Therefore, all the imaging pixels 22 provided in the display unit 11 are exposed at the same time, and After that, the data can be read out sequentially. This is called global shutter driving. When global shutter driving is performed, the switches in the imaging pixels 22 The transistors that function as switches (especially the transistors M5 and M6) are A transistor using an oxide semiconductor, which has extremely low leakage current in the on-state, is used. It is preferable that

[0102] The above is a description of an example of a method for driving the imaging pixels 22.

[0103] [Modification of pixel circuit] In the following, examples of the pixel 21 and the imaging pixel 22 that are different from those described above will be described. do.

[0104] The pixel 21 and the imaging pixel 22 have a pair of transistors that overlap each other via a semiconductor layer. A transistor having a pair of gates can be applied. Specific examples of the transistor and the OS transistor are described in detail below.

[0105] In a transistor having a pair of gates, the pair of gates are electrically connected to each other. By applying the same potential to the transistor, the on-state current of the transistor is increased; and The advantage is that the saturation characteristics are improved. A potential for controlling the threshold voltage may be applied. Alternatively, a constant potential may be applied to one of the pair of gates. By using the above-mentioned method, the stability of the electrical characteristics of the transistor can be improved. One of the gates of the transistor may be electrically connected to a wiring to which a constant potential is applied. Alternatively, the source or drain may be electrically connected to the transistor itself.

[0106] The pixel 21 shown in FIG. 3A has a pair of gates for the transistors M1 and M3. This is an example of a case where a transistor having a transistor M1 and a transistor M3 has a pair of gates electrically connected to each other. Therefore, the period for writing data to the pixel 21 can be shortened.

[0107] The pixel 21 shown in FIG. 3B includes a transistor M1 and a transistor M3. This is an example in which a transistor having a pair of gates is applied to the transistor M2. The transistor M2 has a pair of gates electrically connected to each other. By using a transistor, the saturation characteristics are improved, making it possible to control the luminance of the light-emitting element EL. This makes it easier to improve the display quality.

[0108] The imaging pixel 22 shown in FIG. 4A has a pair of transistors M5 and M6. This is an example of a case where a transistor with a connected gate is used. This makes it possible to reduce the time required for the reset operation and transfer operation.

[0109] The imaging pixel 22 shown in FIG. 4B has a transistor in addition to the configuration shown in FIG. 4A. M8 is also an example of applying a transistor with a pair of gates connected together. This can reduce the time required for reading.

[0110] The imaging pixel 22 shown in FIG. 4C has a transistor in addition to the configuration shown in FIG. 4B. M7 is also an example of applying a transistor with a pair of gates connected together. This makes it possible to further reduce the time required for reading.

[0111] [Example of cross-sectional structure of display device] The following describes transistors, light receiving elements, and light emitting elements that can be applied to the display device. An example of the child configuration will be described.

[0112] [Configuration example 1] FIG. 5A is a cross-sectional schematic diagram including a transistor 310 and a light-emitting element 330. FIG.

[0113] The transistor 310 is a transistor in which polycrystalline silicon is used for a semiconductor layer. In the configuration shown in 5(A), for example, the transistor 310 corresponds to the transistor M2 of the pixel 21. The light-emitting element 330 corresponds to the light-emitting element EL. One of the source and drain of the capacitor 310 is electrically connected to the pixel electrode of the light-emitting element 330. This is an example.

[0114] In FIG. 5A, a transistor 310 and a light-emitting element are disposed between a substrate 301 and a substrate 302. An element 330 is provided.

[0115] The transistor 310 includes a semiconductor layer 311, an insulating layer 312, a conductive layer 313, and the like. The conductor layer 311 has a channel formation region 311i and a low resistance region 311n. The semiconductor layer 311 comprises silicon. The semiconductor layer 311 preferably comprises polycrystalline silicon. A part of the insulating layer 312 functions as a gate insulating layer. A part of the conductive layer 313 functions as a gate insulating layer. It functions as a contact electrode.

[0116] The low resistance region 311n is a region containing an impurity element. When a channel type transistor is to be formed, phosphorus or arsenic is added to the low resistance region 311n. On the other hand, in the case of a p-channel transistor, the low resistance region 311 n may be doped with boron or aluminum. In order to control the low voltage, the channel forming region 311i is doped with the above-mentioned impurities. That's fine.

[0117] An insulating layer 321 is provided on the substrate 301. The semiconductor layer 311 is The insulating layer 312 is provided to cover the semiconductor layer 311 and the insulating layer 321. The conductive layer 313 is provided on the insulating layer 312 at a position overlapping with the semiconductor layer 311. There are.

[0118] In addition, an insulating layer 322 is provided to cover the conductive layer 313 and the insulating layer 312. The conductive layer 314a and the conductive layer 314b are provided on the substrate 2. 314b is a low resistance region 3 in an opening provided in the insulating layer 322 and the insulating layer 312. A part of the conductive layer 314a is electrically connected to the source electrode and the drain electrode. A part of the conductive layer 314b functions as the other of the source and drain electrodes. In addition, the conductive layer 314a, the conductive layer 314b, and the insulating layer 322 are covered with an insulating film. An edge layer 323 is provided.

[0119] The light emitting element 330 is formed by stacking, from the substrate 301 side, a conductive layer 331, a light emitting layer 332, and a conductive layer 333. The conductive layer 331 functions as a pixel electrode. The conductive layer 333 functions as a common electrode. It works like this.

[0120] The conductive layer 331 is provided over the insulating layer 323. The conductive layer 331 is electrically connected to the conductive layer 314b through the opening. The light-emitting layer 332 is formed by the conductive layer 331 and the insulating layer 324. The conductive layer 333 is provided to cover a part of the light-emitting layer 33 and the insulating layer 324. 2 and insulating layer 324.

[0121] In addition, an adhesive layer 325 is provided on the conductive layer 333, and the adhesive layer 325 is used to attach the substrate 30 1 and a substrate 302 are bonded together.

[0122] [Configuration example 2] FIG. 5B shows a transistor 310a having a pair of gate electrodes. The transistor 310a shown in FIG. 5( The main difference is with the transistor 310 shown in A).

[0123] The conductive layer 315 is provided on the insulating layer 321. An insulating layer 316 is provided to cover the semiconductor layer 21. The semiconductor layer 311 has at least a channel The formation region 311i is provided so as to overlap the conductive layer 315 via the insulating layer 316. .

[0124] In the transistor 310a shown in FIG. 5B, part of the conductive layer 313 is a first gate electrode. The conductive layer 315 functions as a second gate electrode, and a part of the conductive layer 315 functions as a second gate electrode. In this case, a part of the insulating layer 312 functions as a first gate insulating layer, and a part of the insulating layer 316 functions as a second gate insulating layer. It functions as a gate insulating layer.

[0125] Here, when the first gate electrode and the second gate electrode are electrically connected, the insulating layer 3 The conductive layer 313 and the conductive layer 315 are electrically connected to each other through openings provided in the insulating layer 316 and the insulating layer 316. The second gate electrode and the source or drain may be electrically connected. When the insulating layer 322 is connected to the insulating layer 312, the insulating layer 316 is connected to the insulating layer 316 through an opening provided in the insulating layer 322. The conductive layer 314a or the conductive layer 314b may be electrically connected to the conductive layer 315. .

[0126] In the above-described configuration examples 1 and 2, the transistor 310 or the transistor 310 The case where a is electrically connected to the light emitting element 330 has been described. By replacing the transistor 310 or the transistor 310a with a light receiving element, In this case, the light-emitting element 330 This can be achieved by replacing the light emitting layer 332 with an active layer, which will be described later. In this case, one of the source and drain of the transistor 310 or the transistor 310a is The photodiode is electrically connected to a pixel electrode of the photodiode. The transistor M5 in the imaging pixel 22 is a transistor 310 or a transistor The photodiode PD corresponds to the photodiode 310a.

[0127] All of the transistors constituting the pixel 21 and the imaging pixel 22 are LTPS transistors. When applied, the transistor 310 illustrated in FIG. 5(A) or the transistor 310 illustrated in FIG. 5(B) may be used. In this case, the pixel 21 and the imaging pixel 22 are configured as follows. The transistor 310a having the second gate may be used for all the transistors forming the Alternatively, the transistor 310 without the second gate may be applied to all transistors. Alternatively, a transistor 310a having a second gate and a transistor 310b not having a second gate may be used. It may be used in combination with the star 310.

[0128] [Configuration Example 3] Below, we will discuss transistors with silicon semiconductor layers and transistors with metal oxide semiconductor layers. An example of a configuration having both applied transistors will be described.

[0129] FIG. 6A shows a transistor 310a, a transistor 350, a light-emitting element 330, and a receiving element. A cross-sectional schematic view is shown, including a photonic element 340.

[0130] For the transistor 310a and the light-emitting element 330, the above-mentioned configuration example 2 can be applied.

[0131] The transistor 350 is a transistor in which a metal oxide is used for a semiconductor layer. In the configuration shown in A), for example, the transistor 350 corresponds to the transistor M5 of the imaging pixel 22. The light receiving element 340 corresponds to the light receiving element PD. One of the source and drain of the photodiode 350 is electrically connected to the pixel electrode of the photodiode 340. This is an example.

[0132] FIG. 6A also shows an example in which the transistor 350 has a pair of gates.

[0133] The transistor 350 includes a conductive layer 355, an insulating layer 322, a semiconductor layer 351, and an insulating layer 352. , a conductive layer 353, etc. A part of the conductive layer 353 is a first gate electrode of the transistor 350. A portion of the conductive layer 355 serves as a second gate of the transistor 350. At this time, a part of the insulating layer 352 functions as a first gate insulating layer of the transistor 350. A portion of insulating layer 322 functions as a second gate insulating layer for transistor 350. .

[0134] The conductive layer 355 is provided on the insulating layer 312. The insulating layer 322 is provided on the conductive layer 355. The semiconductor layer 351 is provided on the insulating layer 322. The conductive layer 353 is provided to cover the semiconductor layer 351 and the insulating layer 322. The insulating layer 352 is provided on the edge layer 352 and has an area overlapping with the semiconductor layer 351 and the conductive layer 355 .

[0135] In addition, an insulating layer 326 is provided to cover the insulating layer 352 and the conductive layer 353. Conductive layer 354a and conductive layer 354b are provided on 326. The insulating layer 354b is formed by insulating the semiconductor layer 326 and the insulating layer 352 in the openings. A part of the conductive layer 354a is electrically connected to the source electrode and the drain electrode. A part of the conductive layer 354b functions as the other of the source and drain electrodes. In addition, the conductive layer 354a, the conductive layer 354b, and the insulating layer 326 are covered with an insulating film. An edge layer 323 is provided.

[0136] Here, the conductive layer 314a and the conductive layer 314b are electrically connected to the transistor 310a. It is preferable that the conductive layers 354a and 354b be formed by processing the same conductive film. In FIG. 6A, the conductive layer 314a, the conductive layer 314b, the conductive layer 354a, and the conductive layer 354b is formed on the same plane (i.e., in contact with the upper surface of the insulating layer 326) and In this case, the conductive layer 314a and the conductive layer 314b contain the metal element Through openings provided in the insulating layer 326, the insulating layer 352, the insulating layer 322, and the insulating layer 312, This allows for electrical connection to the low resistance region 311n. preferable.

[0137] A conductive layer 313 serving as a first gate electrode of the transistor 310a and a The conductive layer 355 functioning as the second gate electrode of the transistor 350 is formed by adding the same conductive film. In FIG. 6A, the conductive layer 313 and the conductive layer 355 are preferably formed in the same manner. The insulating layer 312 is formed on one surface (i.e., in contact with the upper surface of the insulating layer 312) and contains the same metal element. This is preferable because it simplifies the manufacturing process.

[0138] The light receiving element 340 includes a conductive layer 341 , an active layer 342 , and a conductive layer 343 .

[0139] The conductive layer 331 and the conductive layer 341 are provided on the insulating layer 323. The conductive layer 341 is preferably formed by processing the same conductive film. The insulating layer 323 is electrically connected to the conductive layer 354 b through an opening formed in the insulating layer 323 .

[0140] The insulating layer 324 is provided to cover the end of the conductive layer 341 and the opening. The layer 342 is provided to cover a part of each of the conductive layer 341 and the insulating layer 324 .

[0141] The active layer 342 and the light-emitting layer 332 each have an island-like top surface. A conductive layer 333, which functions as a conductive layer, is provided over the light-emitting layer 332 and the active layer 342. The conductive layer 333 has a portion overlapping the conductive layer 331 via the light-emitting layer 332 and a portion overlapping the conductive layer 331 via the active layer 342. The conductive layer 341 has a portion overlapping the conductive layer 341 .

[0142] In this way, the pixel electrode of the light emitting element 330 and the pixel electrode of the light receiving element 340 are arranged on the same surface. The light-emitting layer 332 and the active layer 342 are formed in an island shape, and a conductive layer 33 is further provided as a common electrode. 3, the light-emitting layer 332 and the active layer 342 can be formed separately. It is possible to manufacture the optical element 330 and the light receiving element 340. This allows for low-cost and high-functionality A display device with high performance can be manufactured.

[0143] In FIG. 6A, the insulating layer 35 functions as a first gate insulating layer of the transistor 350. 2 covers the edge of the semiconductor layer 351. As shown in a, the insulating layer 352 is processed so that the top surface shape thereof roughly matches that of the conductive layer 353. It's fine.

[0144] In this specification, the phrase "the upper surface shapes are roughly the same" means that there is at least a small difference between the layers. For example, the upper and lower layers may have the same mask pattern. This includes cases where the entire surface is processed using the same mask pattern, or where part of the surface is processed using the same mask pattern. The contours do not overlap, and the upper layer may be located inside the lower layer, or outside the lower layer. In this case too, it is said that "the top surface shapes roughly match."

[0145] The above is a description of an example of the cross-sectional configuration of the display device.

[0146] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0147] (Embodiment 2) In this embodiment, a display device according to one embodiment of the present invention will be described. The device includes a light emitting element and a light receiving element. The display device has a function of displaying an image and a function of detecting the object to be detected. The function of detecting the position using the reflected light from the object, and the function of taking a picture of a fingerprint etc. using the reflected light from the object to be detected. The display device exemplified below has a function as a touch panel and It can also be said that it has a function as a fingerprint sensor.

[0148] A display device according to one embodiment of the present invention includes a light-emitting element that emits first light and a light-receiving element that receives the first light. That is, the light receiving element has a wavelength range in which the light receiving wavelength is equal to the wavelength of the light emitted by the light emitting element. The first light is preferably a visible light or an infrared light. When infrared light is used as the first light, an emitting light that exhibits the first light can be used. In addition to the element, a light-emitting element that emits visible light may be included.

[0149] The display device also has a pair of substrates (also referred to as a first substrate and a second substrate). The display element and the light receiving element are disposed between a first substrate and a second substrate. The first substrate is located on the side opposite to the display surface side, and the second substrate is located on the side opposite to the display surface side. A sealing substrate or a protective film for sealing can be used. A resin layer may be provided between the substrate and the second substrate to bond them together.

[0150] Visible light emitted from the light emitting element is emitted to the outside through the first substrate. By having a plurality of the light emitting elements arranged in a matrix, an image can be displayed. Cut.

[0151] The first light emitted from the light emitting element reaches the surface of the first substrate. When an object touches the surface of the first substrate, the first light is scattered at the interface between the first substrate and the object, and the A part of the scattered light is incident on the light receiving element. When the light receiving element receives the first light, it detects the intensity of the first light. The display device can convert the light into an electrical signal according to the light and output it. By having multiple light receiving elements, it is possible to detect the position information, shape, etc. of an object that touches the first substrate. That is, the display device can be an image sensor panel, a touch sensor panel, etc. It can function as such.

[0152] Even if the object does not touch the surface of the first substrate, the first light that passes through the first substrate The light is reflected or scattered on the surface of the object, and the reflected or scattered light is transmitted through the first substrate. Therefore, the display device is a non-contact touch sensor panel (Near Touch It can also be used as a touch panel.

[0153] When visible light is used as the first light, the first light used for displaying an image is transmitted to the touch sensor. In this case, the light emitting element functions as a display element and a light source. The first light also functions as a light source, which simplifies the configuration of the display device. When infrared light is used, it is not visible to the user, so the visibility of the displayed image is reduced. Image pickup or sensing can be performed by the light receiving element without any trouble.

[0154] When infrared light is used as the first light, it is preferable that the first light contains near-infrared light. Near-infrared light having one or more peaks in the range of 700 nm to 2500 nm is preferably used. In particular, it is possible to obtain one or more peaks in the wavelength range of 750 nm to 1000 nm. By using light having such a property, the range of materials to be used for the active layer of the light receiving element can be widened, which is preferable. stomach.

[0155] When a fingertip touches the surface of the display device, the shape of the fingerprint can be captured. There are concave and convex parts, and when a finger touches the first substrate, the convex parts of the fingerprint that touch the surface of the first substrate The first light is easily scattered. Therefore, the scattered light incident on the light receiving element overlapping the convex portion of the fingerprint is scattered. The intensity of the light is high, and the intensity of the scattered light incident on the light receiving element overlapping the recess is low. This allows the fingerprint to be captured. The captured fingerprint image can be used to perform fingerprint authentication, a type of biometric authentication. do.

[0156] The display device can also capture images of blood vessels, particularly veins, in fingers or hands. Light with a wavelength of 760 nm or thereabouts is not absorbed by reduced hemoglobin in the veins, The location of veins is detected by a light-receiving element that receives light reflected from the palm or fingers and creates an image. The device having the display device according to one aspect of the present invention can detect the image of a still image. By using images of the pulse, vein authentication, a type of biometric authentication, can be performed.

[0157] Furthermore, a device including the display device of one embodiment of the present invention can perform touch sensing and fingerprint authentication. This allows for low-cost authentication without increasing the number of parts. It is possible to perform high-security biometric authentication at low cost.

[0158] The light receiving element is preferably an element capable of receiving both visible light and infrared light. The light-emitting element has both a light-emitting element that emits infrared light and a light-emitting element that emits visible light. This makes it possible to measure the reflected light from the user's finger using visible light. By receiving light with a light receiving element, the shape of the fingerprint can be captured. This allows for both fingerprint and vein authentication. It is possible to perform this on a single display device. Also, the fingerprint image and the vein image can be captured separately. These can be performed at different times or simultaneously. By capturing the fingerprint and the vein pattern simultaneously, both information on the fingerprint shape and the vein pattern are included. This makes it possible to acquire image data, enabling more accurate biometric authentication.

[0159] Furthermore, the display device of one embodiment of the present invention may have a function of detecting the health condition of a user. For example, the reflectance and refractive index for visible and infrared light can be adjusted according to the change in the oxygen saturation level in the blood. By utilizing the change in transmittance, the time modulation of the oxygen saturation is obtained, and the heart rate is detected. It is also possible to measure the glucose concentration in the dermis and the neutral fat in the blood. The concentration and the like can also be measured using infrared light or visible light. The device has a health function that can acquire information that is an indicator of the user's health condition. It can be used as a home care device.

[0160] A more specific example will be described below with reference to the drawings.

[0161] [Display panel configuration example 1] [Configuration Example 1-1] 7A is a schematic diagram of a display panel 50. The display panel 50 includes a substrate 51, a substrate 52, and a 2, the light receiving element 53, the light emitting element 57R, the light emitting element 57G, the light emitting element 57B, the functional layer 55, etc. The light emitting element 57R, the light emitting element 57G, the light emitting element 57B, and the light receiving element 53 are 51 and the substrate 52.

[0162] The light emitting element 57R, the light emitting element 57G, and the light emitting element 57B are red (R), green (G), and ) or blue (B) light.

[0163] The display panel 50 has a plurality of pixels arranged in a matrix. Each subpixel has one light-emitting element. For example, a pixel has , a configuration having three sub-pixels (three colors of R, G, B, or yellow (Y), cyan (C), and and magenta (M), or a configuration with four sub-pixels (R, G, B, white ( In addition, the pixel can be configured with four colors (e.g., red, green, blue, and yellow) or four colors (e.g., red, green, blue, and yellow). The light receiving element 53 may be provided in all pixels, or in some pixels. Furthermore, one pixel may have a plurality of light receiving elements 53.

[0164] 7A shows a state in which a finger 60 touches the surface of the substrate 52. Light-emitting element 57G A portion of the light emitted by the substrate 52 is reflected or scattered at the contact point between the substrate 52 and the finger 60. A part of the reflected light or scattered light is incident on the light receiving element 53, and the finger 60 is placed on the substrate 52. That is, the display panel 50 can function as a touch panel. It can function.

[0165] The functional layer 55 includes circuits for driving the light emitting elements 57R, 57G, and 57B, and The functional layer 55 includes a switch, a transistor, Capacitances, wiring, etc. are provided. When the light receiving element 53 is driven by a passive matrix method, the switch is also a transistor. A configuration without a resistor may also be used.

[0166] The display panel 50 may have a function for detecting the fingerprint of a finger 60. 1 is a schematic enlarged view of a contact portion when a finger 60 is in contact with the substrate 52. FIG. 7B shows light emitting elements 57 and light receiving elements 53 arranged alternately.

[0167] A fingerprint is formed on the finger 60 by recesses and protrusions. When the raised portion of the fingerprint touches the substrate 52, the contact surface scatters light (indicated by the dashed arrows). occurs.

[0168] As shown in FIG. 7B, the intensity distribution of the scattered light scattered at the contact surface between the finger 60 and the substrate 52 is The strength is highest in the direction roughly perpendicular to the contact surface, and the larger the angle in the oblique direction, the lower the strength. Therefore, the intensity distribution is as low as possible. The intensity of the light received by the element 53 is the highest. The upper light is totally reflected by the other surface of the substrate 52 (the surface opposite to the contact surface) and enters the light receiving element 53 side. Therefore, the fingerprint shape can be clearly captured.

[0169] The arrangement interval of the light receiving elements 53 is the distance between two convex portions of a fingerprint, preferably the distance between adjacent concave portions and convex portions. By making the interval smaller than the distance between the portions, a clear image of the fingerprint can be obtained. Since the distance between the recesses and protrusions of a human fingerprint is approximately 200 μm, for example, the arrangement of the light receiving element 53 The row spacing is 400 μm or less, preferably 200 μm or less, and more preferably 150 μm or less. , more preferably 100 μm or less, and even more preferably 50 μm or less, Preferably, the thickness is 10 μm or more, and more preferably 20 μm or more.

[0170] An example of a fingerprint image captured by the display panel 50 is shown in FIG. 7(C). Within the range 63, the outline of the finger 60 is indicated by a dashed line, and the outline of the contact part 61 is indicated by a dashed line. In the area 61, the difference in the amount of light incident on the light receiving element 53 causes a high-contrast finger. The fingerprint 62 can be photographed.

[0171] The display panel 50 can also function as a touch panel or a pen tablet. In FIG. 7(D), the tip of the stylus 65 is in contact with the substrate 52, and the broken line The image shows the device being slid in the direction of the arrow.

[0172] As shown in FIG. 7(D), the scattering light is scattered at the contact surface between the tip of the stylus 65 and the substrate 52. The diffused light is incident on the light receiving element 53 located at the part overlapping with the contact surface, and the stylus The position of the tip of 65 can be detected with high accuracy.

[0173] FIG. 7(E) shows an example of a trajectory 66 of the stylus 65 detected by the display panel 50. The display panel 50 is capable of detecting the position of a detection object such as a stylus 65 with high positional accuracy. Therefore, it is possible to perform high-resolution drawing in drawing applications, etc. In addition, unlike when using a capacitance type touch sensor or an electromagnetic induction type touch pen, Since it is possible to detect the position of even highly insulating objects, the tip of the stylus 65 The material of the writing implements is not important, and various writing implements (e.g., brushes, glass pens, quills, etc.) may be used. It is also possible.

[0174] Here, FIGS. 7(F) to 7(H) show examples of pixels that can be applied to the display panel 50. .

[0175] The pixels shown in FIG. 7(F) and FIG. 7(G) are light-emitting elements 57R and 57G, respectively. The pixels have a light emitting element 57R, a light emitting element 57B, and a light receiving element 53. The pixel circuit includes a pixel circuit for driving the light receiving element 53, the light emitting element 57G, the light emitting element 57B, and the light receiving element 53.

[0176] Figure 7(F) shows a 2x2 matrix of three light-emitting elements and one light-receiving element. FIG. 7(G) shows an example in which three light-emitting elements are arranged in a row, and a horizontally long In this example, one light receiving element 53 is arranged.

[0177] The pixel shown in FIG. 7(H) is an example having a white (W) light-emitting element 57W. Four light-emitting elements are arranged in a row, and a light-receiving element 53 is arranged below them.

[0178] The pixel configuration is not limited to the above, and various arrangement methods can be adopted.

[0179] [Configuration Example 1-2] Hereinafter, a light emitting element that emits visible light, a light emitting element that emits infrared light, and a light receiving element will be described. An example of a configuration that can be implemented will be described below.

[0180] The display panel 50A shown in FIG. 8A has the same configuration as that shown in FIG. 7A, but also has a light-emitting element. The light emitting element 57IR is a light emitting element that emits infrared light IR. At this time, the light receiving element 53 receives at least the infrared light IR emitted by the light emitting element 57IR. It is preferable to use an element that can receive visible light and infrared light as the light receiving element 53. It is more preferable to use an element that can receive both types of light.

[0181] As shown in FIG. 8(A), when a finger 60 touches the substrate 52, light is emitted from the light emitting element 57IR. The infrared light IR is reflected or scattered by the finger 60, and a part of the reflected or scattered light is received. When the light is incident on the optical element 53, the position information of the finger 60 can be obtained.

[0182] 8(B) to 8(D) show an example of a pixel that can be applied to the display panel 50A.

[0183] FIG. 8(B) shows three light emitting elements arranged in a row, and below them, a light emitting element 57IR and a receiving element 57IR. 8C shows an example in which the light emitting element 57 and the light emitting element 53 are arranged side by side. Four light-emitting elements including IR are arranged in a row, and a light-receiving element 53 is arranged below them. Here is an example.

[0184] FIG. 8(D) shows a configuration in which a light emitting element 57IR is located at the center, and three light emitting elements and a light receiving element are arranged on all four sides. This is an example in which an element 53 is arranged.

[0185] In the pixels shown in FIGS. 8B to 8D, the light-emitting elements and the light-emitting elements The positions of the light receiving element and the light receiving element can be exchanged.

[0186] [Display panel configuration example 2] [Configuration Example 2-1] FIG. 9A is a schematic cross-sectional view of the display panel 100A.

[0187] The display panel 100A includes a pair of substrates (substrate 151 and substrate 152) and a light receiving element 11 disposed between them. 0, a light-emitting element 190, a transistor 131, a transistor 132, and the like.

[0188] The transistors 131 and 132 may be the same as those described in Embodiment 1. The transistor 310 or the transistor 350 can be used.

[0189] The light receiving element 110 includes a pixel electrode 111, a common layer 112, an active layer 113, a common layer 114, and a The light-emitting element 190 includes a pixel electrode 191, a common layer 112, a light-emitting layer 193 , a common layer 114 , and a common electrode 115 .

[0190] Pixel electrode 111, pixel electrode 191, common layer 112, active layer 113, light-emitting layer 193, common The layer 114 and the common electrode 115 may each have a single layer structure or a laminated structure. That's fine.

[0191] The pixel electrode 111 and the pixel electrode 191 are located on the insulating layer 214. The pixel electrode 191 can be formed using the same material and in the same process.

[0192] The common layer 112 is located on the pixel electrode 111 and the pixel electrode 191. The common layer 112 is , a layer used in common by the light receiving element 110 and the light emitting element 190.

[0193] The active layer 113 overlaps with the pixel electrode 111 via the common layer 112. The light-emitting layer 193 is The active layer 113 overlaps with the pixel electrode 191 via the common layer 112. The active layer 113 contains a first organic compound. The light-emitting layer 193 contains a second organic compound different from the first organic compound.

[0194] Common layer 114 is located on common layer 112 , active layer 113 , and light-emitting layer 193 . The common layer 114 is a layer that is used in common by the light receiving element 110 and the light emitting element 190 .

[0195] The common electrode 115 is connected to the pixel electrode via the common layer 112, the active layer 113, and the common layer 114. The common electrode 115 has a portion overlapping with the common layer 112 and the light-emitting layer 193. , and has a portion overlapping with the pixel electrode 191 via the common layer 114. The common electrode 115 , a layer used in common by the light receiving element 110 and the light emitting element 190.

[0196] In the display panel of this embodiment, an organic compound is used for the active layer 113 of the light receiving element 110. The light receiving element 110 has layers other than the active layer 113 that share a structure with the light emitting element 190 (EL element). Therefore, in the manufacturing process of the light emitting device 190, the active layer 113 can be formed. By simply adding a step of forming the light-emitting element 190, the light-receiving element 110 can be formed in parallel with the formation of the light-emitting element 190. Furthermore, the light emitting element 190 and the light receiving element 110 can be formed on the same substrate. Therefore, the light receiving element 110 can be incorporated into the display panel without significantly increasing the number of manufacturing steps. It can be stored.

[0197] In the display panel 100A, the active layer 113 of the light receiving element 110 and the light emitting layer 190 193 and 194 are made separately, but the light receiving element 110 and the light emitting element 190 have the same configuration. However, the configuration of the light receiving element 110 and the light emitting element 190 is not limited to this. The element 110 and the light emitting element 190 are fabricated separately from each other in addition to the active layer 113 and the light emitting layer 193. (See display panels 100D, 100E, and 100F described later.) The element 110 and the light emitting element 190 may have one or more layers that are used in common (common layers). This is preferable. It is possible to provide the light receiving element 110 on the display panel without significantly increasing the manufacturing process. can be built in.

[0198] In the light receiving element 110, the pixel electrodes 111 and the common electrode 115 are located between the pixel electrodes 111 and the common electrode 115. The common layer 112, the active layer 113, and the common layer 114 are called organic layers (layers containing organic compounds). It is preferable that the pixel electrode 111 has a function of reflecting visible light. The end of the electrode 111 is covered by a partition wall 216. The common electrode 115 is transparent to visible light. It has the function of

[0199] The light receiving element 110 has a function of detecting light. Specifically, the light receiving element 110 is 152 receives the light 122 incident from the outside and converts it into an electrical signal. He is a child.

[0200] A light-shielding layer BM is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer BM has openings at positions overlapping the optical element 110 and the light-emitting element 190. By providing this, the range in which the light receiving element 110 detects light can be controlled.

[0201] The light-shielding layer BM can be made of a material that blocks light emitted from the light-emitting element. It is preferable that M absorbs visible light. The light-shielding layer BM is made of, for example, a metal material or Black matrix is ​​created using resin materials containing pigments (carbon black, etc.) or dyes. The light-shielding layer BM can be formed with a red color filter, a green color filter, and a The transparent electrode may have a laminated structure of a transparent electrode and a blue color filter.

[0202] Here, a part of the light emitted from the light emitting element 190 is reflected within the display panel 100A and The light blocking layer BM suppresses the influence of such stray light. For example, if the light-shielding layer BM is not provided, the light emitted by the light-emitting element 190 The reflected light 123a is reflected by the substrate 152, and the reflected light 123b is incident on the light receiving element 110. By providing the light-shielding layer BM, the reflected light 123b is prevented from entering the light-receiving element 110. This reduces noise and increases the sensitivity of the sensor using the light receiving element 110. It is possible.

[0203] In the light-emitting element 190, the pixel electrode 191 and the common electrode 115 are located between the pixel electrode 191 and the common electrode 115. The common layer 112, the light-emitting layer 193, and the common layer 114 can also be called an EL layer. The pixel electrode 191 preferably has a function of reflecting visible light. The pixel electrode 111 and the pixel electrode 191 are covered by the partition wall 216. They are electrically insulated from each other. The common electrode 115 has a function of transmitting visible light.

[0204] The light emitting element 190 has a function of emitting visible light. By applying a voltage between the element electrode 191 and the common electrode 115, light 121 is emitted to the substrate 152 side. It is an electroluminescent element that emits light.

[0205] The light-emitting layer 193 is preferably formed so as not to overlap the light-receiving region of the light-receiving element 110. This can prevent the light emitting layer 193 from absorbing the light 122, and This allows for a larger amount of light to be irradiated onto the target object.

[0206] The pixel electrode 111 is connected to the transistor 131 via an opening provided in the insulating layer 214. The edge of the pixel electrode 111 is electrically connected to the source or drain of the pixel electrode 111. is covered by

[0207] The pixel electrode 191 is connected to the transistor 132 via an opening provided in the insulating layer 214. The edge of the pixel electrode 191 is electrically connected to the source or drain of the pixel electrode 191. The transistor 132 has the function of controlling the driving of the light emitting element 190. Has.

[0208] The transistors 131 and 132 are formed on the same layer (substrate 151 in FIG. 9A). ) is attached to the top.

[0209] At least a part of the circuit electrically connected to the light receiving element 110 is electrically connected to the light emitting element 190. It is preferable that the circuit is formed from the same material and in the same process as the circuit to which it is electrically connected. This allows the thickness of the display panel to be thinner than when the two circuits are formed separately. In addition, the manufacturing process can be simplified.

[0210] The light receiving element 110 and the light emitting element 190 are each covered with a protective layer 195. In FIG. 9A, the protective layer 195 is provided on and in contact with the common electrode 115. By providing the protective layer 195, impurities such as water can be prevented from entering the light receiving element 110 and the light emitting element 190. This can prevent the particles from entering the light receiving element 110 and the light emitting element 190, thereby improving the reliability of the light receiving element 110 and the light emitting element 190. In addition, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142.

[0211] As shown in FIG. 10(A), a protective layer is formed on the light receiving element 110 and the light emitting element 190. In FIG. 10A, the common electrode 115 and the substrate are bonded together by the adhesive layer 142. The plate 152 is bonded to the substrate.

[0212] Also, as shown in FIG. 10(B), a configuration without the light-shielding layer BM may be used. This allows the light receiving area of ​​the light receiving element 110 to be increased, thereby further increasing the sensitivity of the sensor. Cut.

[0213] [Configuration Example 2-2] FIG. 9B shows a cross-sectional view of the display panel 100B. In this regard, the description of the same configuration as the display panel described above may be omitted.

[0214] The display panel 100B shown in FIG. 9B has the same configuration as the display panel 100A, but also has a lens 1. It has 49.

[0215] The lens 149 is provided at a position overlapping the light receiving element 110. Display panel 100B In the display panel 100B, the lens 149 is provided in contact with the substrate 152. The lens 149 is a convex lens having a convex surface on the substrate 151 side. A convex lens having a surface may be disposed in the area overlapping with the light receiving element 110.

[0216] When both the light-shielding layer BM and the lens 149 are formed on the same surface of the substrate 152, the formation In FIG. 9B, an example in which the lens 149 is formed first is shown, but the light-shielding layer BM may be formed first. In FIG. 9B, the edge of the lens 149 is covered with the light-shielding layer BM. are.

[0217] The display panel 100B has a structure in which light 122 is incident on the light receiving element 110 via a lens 149. When the lens 149 is provided, the light receiving element 1 is more easily illuminated than when the lens 149 is not provided. This increases the amount of light 122 incident on the light receiving element 110. Sensitivity can be increased.

[0218] The method for forming the lenses used in the display panel of this embodiment is to form the lenses on the substrate or the light receiving element. A lens such as a microlens may be formed directly on the substrate, or a separately manufactured microlens may be formed on the substrate. A lens array such as a lens array may be attached to the substrate.

[0219] [Configuration Example 2-3] 9C is a schematic cross-sectional view of the display panel 100C. 151, substrate 152, and the partition wall 216, and the substrate 153, substrate 154, adhesive layer 155 2. The display panel 100 differs from the display panel 100A in that it includes an insulating layer 212 and a partition wall 217.

[0220] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. and protective layer 195 are bonded together by adhesive layer 142.

[0221] The display panel 100C includes an insulating layer 212, a transistor 131, and a The transistor 132, the light receiving element 110, the light emitting element 190, etc. are transferred onto the substrate 153. The substrate 153 and the substrate 154 are each made of flexible material. This makes it possible to improve the flexibility of the display panel 100C. For example, it is preferable to use a resin for the substrate 153 and the substrate 154, respectively.

[0222] The substrates 153 and 154 are made of polyethylene terephthalate (PET). ), polyester resins such as polyethylene naphthalate (PEN), polyacrylonitrile Resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate Polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, amide, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide Imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, poly Propylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose One or both of the substrate 153 and the substrate 154 may be made of a material such as silicon nanofiber. Alternatively, glass having a thickness sufficient to provide flexibility may be used.

[0223] A film having high optical isotropy may be used for the substrate of the display panel of this embodiment. Triacetyl cellulose (TAC, cellulose acetate) is an example of a film with high optical isotropy. (also called triacetate) film, cycloolefin polymer (COP) film, Examples include chloroolefin copolymer (COC) film and acrylic film.

[0224] The partition 217 preferably absorbs light emitted from the light emitting element. For example, a black matrix can be formed using a resin material containing a pigment or a dye. The partition wall 217 can be made of a colored insulating material such as a brown resist material. It is possible.

[0225] The light 123c emitted from the light emitting element 190 is reflected by the substrate 154 and the partition wall 217. The light 123d may be incident on the light receiving element 110. The light 123c may be transmitted through the partition wall 217. The reflected light 123d is reflected by the transistor or wiring, and reaches the light receiving element 110. The light 123c is absorbed by the partition wall 217, and the reflected light 123 d can be prevented from being incident on the light receiving element 110. This reduces noise and The sensitivity of the sensor using the element 110 can be increased.

[0226] The partition wall 217 preferably absorbs at least the wavelength of light detected by the light receiving element 110. For example, when the light receiving element 110 detects red light emitted by the light emitting element 190, It is preferable that the partition wall 217 absorbs at least red light. The color filter 123b absorbs red light 123c and reflects red light 123d. can be prevented from being incident on the light receiving element 110.

[0227] [Configuration Example 2-4] In the above example, the light emitting element and the light receiving element have two common layers. However, this is not limiting. Below, we will explain an example in which the common layer has a different configuration.

[0228] FIG. 11A is a schematic cross-sectional view of the display panel 100D. The display panel does not have the through layer 114 but has the buffer layer 184 and the buffer layer 194. 100A. The buffer layer 184 and the buffer layer 194 each have a single layer structure. It may have a laminated structure.

[0229] In the display panel 100D, the light receiving element 110 includes a pixel electrode 111, a common layer 112, an active layer 113, and a The display panel 100 includes a conductive layer 113, a buffer layer 184, and a common electrode 115. In FIG. 1D, the light emitting element 190 includes a pixel electrode 191, a common layer 112, a light emitting layer 193, a buffer layer 194, and a light emitting layer 195. The layer 194 and the common electrode 115 are provided.

[0230] In the display panel 100D, the buffer layer 184 between the common electrode 115 and the active layer 113 1 shows an example in which the buffer layer 194 between the common electrode 115 and the light-emitting layer 193 is separately formed. The buffer layer 184 and the buffer layer 194 may be, for example, one of an electron injection layer and an electron transport layer. Either or both can be formed.

[0231] FIG. 11B is a schematic cross-sectional view of the display panel 100E. The display panel does not have the through layer 112 but has the buffer layer 182 and the buffer layer 192. 100A. The buffer layer 182 and the buffer layer 192 each have a single-layer structure. It may have a laminated structure.

[0232] In the display panel 100E, the light receiving element 110 includes a pixel electrode 111, a buffer layer 182, and a , an active layer 113, a common layer 114, and a common electrode 115. The display panel 100 In E, the light emitting element 190 includes a pixel electrode 191, a buffer layer 192, a light emitting layer 193, a common electrode 194, a common electrode 195, a common electrode 196, a common electrode 197, a common electrode 198, a common electrode 199, a common electrode 199, a common electrode 191, a common electrode 192, a common electrode 193, a common electrode 194, a common electrode 195, a common electrode 196, a common electrode 197, a common electrode 198, a common electrode 19 ... It has a through layer 114 and a common electrode 115 .

[0233] In the display panel 100E, the buffer layer 182 between the pixel electrode 111 and the active layer 113 1 shows an example in which the buffer layer 192 between the pixel electrode 191 and the light-emitting layer 193 is separately formed. The buffer layer 182 and the buffer layer 192 may be, for example, a hole injection layer and a hole transport layer. Either or both can be formed.

[0234] FIG. 11C is a schematic cross-sectional view of the display panel 100F. The buffer layer 182, the buffer layer 184, and the buffer layer 186 are not provided. The display panel 100 differs from the display panel 100A in that it includes a layer 192 and a buffer layer 194.

[0235] In the display panel 100F, the light receiving element 110 includes a pixel electrode 111, a buffer layer 182, and a , an active layer 113, a buffer layer 184, and a common electrode 115. 00F, the light emitting element 190 includes a pixel electrode 191, a buffer layer 192, and a light emitting layer 193. , a buffer layer 194 , and a common electrode 115 .

[0236] In the manufacture of the light receiving element 110 and the light emitting element 190, the active layer 113 and the light emitting layer 193 are formed. Not only can you separate it, but you can also create other layers.

[0237] In the display panel 100F, the light receiving element 110 and the light emitting element 190 form a pair of electrodes (pixel electrodes). 1 shows an example in which there is no common layer between the electrode 111 or pixel electrode 191 and the common electrode 115. The light receiving element 110 and the light emitting element 190 of the display panel 100F are formed on the insulating layer 214. The element electrode 111 and the pixel electrode 191 are formed using the same material and in the same process. The buffer layer 182, the active layer 113, and the buffer layer 184 are disposed on the pixel electrode 191. After forming the buffer layer 192, the light-emitting layer 193, and the buffer layer 194, The common electrode 115 is formed to cover the photoresist layer 184 and the buffer layer 194. can.

[0238] The stacked structure of the buffer layer 182, the active layer 113, and the buffer layer 184 and the buffer The order of forming the laminated structure of the light emitting layer 192, the light emitting layer 193, and the buffer layer 194 is not particularly limited. For example, after the buffer layer 182, the active layer 113, and the buffer layer 184 are formed, The buffer layer 192, the light-emitting layer 193, and the buffer layer 194 may be formed. Before the deposition of the photoresist layer 182, the active layer 113, and the buffer layer 184, the buffer layer 192 , a light-emitting layer 193, and a buffer layer 194 may be formed. The buffer layer 192, the active layer 113, the light-emitting layer 193, etc. may be deposited alternately in this order.

[0239] [Display panel configuration example 3] A more specific example of the configuration of the display panel will be described below.

[0240] [Configuration Example 3-1] FIG. 12 shows a perspective view of the display panel 200A.

[0241] The display panel 200A has a structure in which a substrate 151 and a substrate 152 are bonded together. 2, the substrate 152 is shown in dashed lines.

[0242] The display panel 200A includes a display unit 162, a circuit 164, wiring 165, etc. 1 is an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on a display panel 200A. Therefore, the configuration shown in FIG. 12 includes the display panel 200A, the IC, and the FPC. It can also be called a display module having the above.

[0243] The circuit 164 can be a scanning line driver circuit.

[0244] The wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164 . The signal and power are input from the outside via FPC172 or from IC173. The signal is input to wiring 165.

[0245] In Figure 12, the COG (Chip On Glass) method or COF (Chip On In this example, an IC 173 is mounted on a substrate 151 using a method such as an IC Film. C173 can be applied to an IC having, for example, a scanning line driving circuit and a signal line driving circuit. The display panel 200A and the display module may be configured without an IC. The IC may be mounted on the FPC using a COF method or the like.

[0246] FIG. 13 shows a part of the area including the FPC 172 of the display panel 200A shown in FIG. A part of the area including the path 164, a part of the area including the display unit 162, and a part of the area including the end 1 shows an example of a cross section when each part is cut.

[0247] The display panel 200A has a transistor 208, a transistor 209, and a transistor 208a between the substrate 151 and the substrate 152. The pixel includes a resistor 209, a transistor 210, a light emitting element 190, a light receiving element 110, and the like.

[0248] The transistor 208 and the transistor 210 have a low-temperature The transistor 209 is a transistor to which warm polysilicon is applied. In this transistor, a metal oxide is applied to a semiconductor layer where the metal oxide is formed.

[0249] The transistor 208, the transistor 209, and the transistor 210 are all substrate These transistors are formed on the same material as at least a portion of the transistor. They can be produced by the same process.

[0250] On the substrate 151, an insulating layer 261, an insulating layer 262, an insulating layer 263, an insulating layer 264, and The insulating layer 261 is provided in this order. The insulating layer 262 functions as the second gate insulating layer of the transistor 20. The insulating layer 263 covers the transistor 208 and serves as the first gate insulating layer of the transistor 208. A part of the insulating layer functions as a second gate insulating layer of the transistor 209. 264 is provided to cover the transistor 208, and a part of it is connected to the first The insulating layer 265 functions as a gate insulating layer for the transistor 208 and the transistor The insulating layer 214 is provided on the insulating layer 265. The gate insulating layer functions as a planarization layer. The number of edge layers is not limited, and each may be a single layer or two or more layers.

[0251] At least one insulating layer covering the transistor is made of a material that is difficult for impurities such as water and hydrogen to diffuse into. It is preferable to use a material that is not too thin. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to prevent impurities from diffusing into the transistor from the outside. This can be effectively suppressed, and the reliability of the display device can be improved.

[0252] As the insulating layer 261, the insulating layer 262, the insulating layer 263, the insulating layer 264, and the insulating layer 265 It is preferable to use an inorganic insulating film for each of the insulating films. Silicon film, silicon oxynitride film, silicon oxide film, silicon nitride oxide film, aluminum oxide Inorganic insulating films such as hafnium oxide and aluminum nitride can be used. um film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, Magnesium oxide film, lanthanum oxide film, cerium oxide film, neodymium oxide film, etc. Two or more of the above insulating films may be stacked.

[0253] Here, organic insulating films often have lower barrier properties than inorganic insulating films. The organic insulating film preferably has an opening near the edge of the display panel 200A. In addition, the diffusion of impurities from the end of the display panel 200A through the organic insulating film is suppressed. Alternatively, the edge of the organic insulating film may be positioned inside the edge of the display panel 200A. The organic insulating film is formed so as to prevent the organic insulating film from being exposed at the edge of the display panel 200A. It can also be set to

[0254] An organic insulating film is suitable for the insulating layer 214 that functions as a planarizing layer. Materials that can be used include acrylic resin, polyimide resin, epoxy resin, polyamide resin, amide resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, phenone Examples of the resin include olefin resins and precursors of these resins.

[0255] The transistor 208 and the transistor 210 have a conductive layer 2 serving as a second gate. 21, an insulating layer 261 functioning as a second gate insulating layer, a channel forming region 231i, and a semiconductor layer having a pair of low resistance regions 231n, a semiconductor layer connected to one of the pair of low resistance regions 231n, a conductive layer 222a connected to the other of the pair of low resistance regions 231n; a conductive layer 222b connected to the other of the pair of low resistance regions 231n; an insulating layer 262 that functions as a gate insulating layer; a conductive layer 223 that functions as a first gate; The insulating layer 261 also covers the conductive layer 223. A part of the insulating layer 262 is located between the conductive layer 223 and the channel forming region 231i. and the channel formation region 231i.

[0256] The conductive layer 222a and the conductive layer 222b are respectively the insulating layer 262, the insulating layer 263, and the insulating layer 264. The insulating layer 264 is connected to the low resistance region 231n through an opening provided in the insulating layer 265. One of the conductive layer 222a and the conductive layer 222b functions as a source electrode, and the other functions as a drain electrode. It functions as a rain electrode.

[0257] The transistor 209 includes a conductive layer 251 that functions as a second gate, a second gate insulating layer 252 that functions as a second gate insulating layer, and a second gate insulating layer 253 that functions as a second gate insulating layer. The insulating layer 263, the channel forming region 232i, and the pair of low resistance regions 232 a conductive layer 252a connected to one of the pair of low resistance regions 232n; The conductive layer 252b connected to the other of the low resistance regions 232n functions as a first gate insulating layer. The insulating layer 264 functions as a first gate, the conductive layer 253 functions as a second gate, and the conductive layer 253 is A part of the insulating layer 263 is in contact with the conductive layer 251 and the channel forming region 2. A part of the insulating layer 264 is located between the conductive layer 253 and the channel forming region 23. It is located between 2i.

[0258] The conductive layer 252a and the conductive layer 252b are respectively connected to the insulating layer 264 and the insulating layer 265. The conductive layer 252a and the conductive layer 232n are connected to the low resistance region 232n through the openings. One of the electrodes 52b functions as a source electrode, and the other functions as a drain electrode.

[0259] The structure of the transistor included in the display panel of this embodiment is not particularly limited. Planar type transistors, staggered type transistors, inverted staggered type transistors, etc. In addition, either a top-gate or bottom-gate transistor can be used. Alternatively, gates may be provided above and below the semiconductor layer where the channel is formed. It's fine.

[0260] The transistors 208, 209, and 210 have channels The structure in which the semiconductor layer is sandwiched between two gates is applied. and drive the transistors by supplying the same signal to them. A potential for controlling the threshold voltage is applied to one of the two gates, and a potential for driving the other is applied to the other. The threshold voltage of the transistor may be controlled by applying a potential of the above formula.

[0261] The crystallinity of the semiconductor material used in the transistor is not particularly limited. Single crystal semiconductors or semiconductors with crystallinity other than single crystal (microcrystalline semiconductors, polycrystalline semiconductors) A single-crystal semiconductor or a semiconductor having a crystalline region in part may be used. It is preferable to use a crystalline semiconductor because it can suppress deterioration of transistor characteristics.

[0262] Transistor 208, transistor 209, and transistor 210 are all made of silicon. It is preferred to apply a semiconductor layer having a SiO 2 layer.

[0263] Alternatively, the semiconductor layer of the transistor 209 may include a metal oxide (also referred to as an oxide semiconductor). In addition, the semiconductor layers of the transistor 208 and the transistor 210 are preferably It is preferable to have silicon. The silicon may be amorphous silicon or crystalline silicon. Examples include silicon (low-temperature polysilicon, single-crystal silicon, etc.).

[0264] The semiconductor layer having a metal oxide is, for example, a layer of indium and M (M is gallium, aluminum, Sodium, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium , iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium one selected from zinc, hafnium, tantalum, tungsten, and magnesium, or It is preferable that M is aluminum, gallium, Preferably, it is one or more selected from yttrium and tin.

[0265] In particular, the semiconductor layer having a metal oxide is formed of an oxide containing indium, gallium, and zinc. It is preferable to use IGZO (Inorganic Zinc Oxide).

[0266] When the semiconductor layer is an In-M-Zn oxide, the The sputtering target preferably has an atomic ratio of In to M of 1 or more. The atomic ratio of the metal elements in such a sputtering target is In:M:Zn. =1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=2:1:3, In: M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1 , In:M:Zn=5:1:3, In:M:Zn=5:1:6, In:M:Zn=5:1 :7, In:M:Zn=5:1:8, In:M:Zn=6:1:6, In:M:Zn=5 :2:5 etc.

[0267] When a target containing polycrystalline oxide is used as a sputtering target, This is preferable because it is easy to form a semiconductor layer having crystallinity. The atomic ratio is the plus or minus of the atomic ratio of the metal elements contained in the sputtering target. For example, the composition of the sputtering target used for the semiconductor layer is When the atomic ratio is In:Ga:Zn=4:2:4.1, the composition of the semiconductor layer to be formed is: The atomic ratio may be close to In:Ga:Zn=4:2:3.

[0268] When the atomic ratio is described as In:Ga:Zn=4:2:3 or in the vicinity, it means In When Ga is 4, this includes the case where Ga is 1 or more and 3 or less, and Zn is 2 or more and 4 or less. In addition, when describing that the atomic ratio is In:Ga:Zn=5:1:6 or in the vicinity, When n is 5, Ga is greater than 0.1 and less than or equal to 2, and Zn is greater than or equal to 5 and less than or equal to 7. It also includes cases where the atomic ratio is In:Ga:Zn=1:1:1 or in the vicinity. When mounting, when In is 1, Ga is greater than 0.1 and not more than 2, and Zn is 0. This includes cases where the value is greater than 1 and less than or equal to 2.

[0269] The transistors included in the circuit 164 and the transistors included in the display portion 162 have the same structure. The circuit 164 may have a plurality of transistors, or may have a different structure. The structures may all be the same, or there may be two or more types. The structures of the plurality of transistors may all be the same, or there may be two or more types.

[0270] Here, the transistor 210 included in the circuit 164 has the same structure as the transistor 208. Although the transistor shown has the same structure as the transistor 210, the circuit 164 is Alternatively, the circuit 164 may include a transistor 208 and a A transistor having the same structure as the transistor 209 may be used in combination.

[0271] Here, the conductive layer 251 and the conductive layer 223 are located on the same plane and are made by processing the same conductive film. In addition, the conductive layer 222a, the conductive layer 222b, the conductive layer 252a, and the conductive The layers 252b and the like are located on the same plane and are formed by processing the same conductive film.

[0272] The light emitting element 190 is made up of a pixel electrode 191, a common layer 112, and a light emitting layer 193 from the insulating layer 214 side. , a common layer 114, and a common electrode 115 are laminated in this order. 1 is connected to the conductive layer 22 of the transistor 208 through an opening provided in the insulating layer 214. 2b. The transistor 208 controls the current flowing through the light emitting element 190. The edge of the pixel electrode 191 is covered by a partition wall 216. 91 includes a material that reflects visible light, and the common electrode 115 includes a material that transmits visible light.

[0273] The light receiving element 110 is made up of a pixel electrode 111, a common layer 112, an active layer 113, and a common layer 114. The pixel electrode 11 has a laminated structure in which the pixel electrode 11, the common layer 114, and the common electrode 115 are laminated in this order. 1 is connected to a conductive layer 25 of the transistor 209 through an opening provided in the insulating layer 214. The end of the pixel electrode 111 is covered with a partition wall 216. The pixel electrode 111 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light. Contains materials that

[0274] The light emitted by the light emitting element 190 is emitted to the substrate 152 side. The light is incident on the substrate 152 through the adhesive layer 142. The substrate 152 has a resistance to visible light. It is preferable to use a material that has high transparency.

[0275] The pixel electrode 111 and the pixel electrode 191 can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are connected to the light receiving element 110 and the light emitting element 110. The light receiving element 110 and the light emitting element 190 are both formed of an active layer 113 and a light emitting layer. The structure of the layer 193 is different, but the other components can be the same. The light receiving element 110 can be built into the display panel 200A without significantly increasing the manufacturing cost. do.

[0276] A protective layer 195 is provided to cover the light receiving element 110 and the light emitting element 190. 95 prevents impurities such as water from diffusing into the light receiving element 110 and the light emitting element 190. As a result, the reliability of the light receiving element 110 and the light emitting element 190 can be improved.

[0277] In the region 228 shown in FIG. 13, an opening is formed in the insulating layer 214. Even when an organic insulating film is used for the insulating layer 214, the display unit Therefore, the reliability of the display panel 200A can be improved. can be increased.

[0278] In addition, in a region 228 near the edge of the display panel 200A, the insulating layer 214 is opened. It is preferable that the insulating layer 265 and the protective layer 195 contact each other. It is preferable that the inorganic insulating film of the protective layer 195 and the inorganic insulating film of the protective layer 195 are in contact with each other. This prevents impurities from diffusing from the outside into the display section 162 via the organic insulating film. This can improve the reliability of the display panel 200A.

[0279] The protective layer 195 preferably has a laminated structure of an organic insulating film and an inorganic insulating film. The protective layer 195 is formed on the common electrode 115 in a three-layer structure of an inorganic insulating film, an organic insulating film, and an inorganic insulating film. In this case, it is preferable that the end of the inorganic insulating film is extended outward from the end of the organic insulating film. It is preferable to have it present.

[0280] In the display panel 200A, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142. The adhesive layer 142 overlaps the light receiving element 110 and the light emitting element 190. That is, a solid sealing structure is applied to the display panel 200A. do.

[0281] A connection portion 204 is provided on the substrate 151 in an area that does not overlap with the substrate 152 . In the connection portion 204, the wiring 165 is connected to the FPC 172 via the conductive layer 166 and the connection layer 242. The upper surface of the connection portion 204 is formed of the same conductive film as the pixel electrode 191. The conductive layer 166 thus obtained is exposed. can be electrically connected via the connection layer 242.

[0282] Various optical members can be arranged on the outside of the substrate 152. Examples include a plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. The outside of the substrate 152 is coated with an anti-static film to prevent dust from adhering, a water-repellent film that makes the surface resistant to scratches, a hard coating that prevents scratches from occurring during use, and an impact absorbing layer. A touch sensor panel may be disposed on the outside of the substrate 152. The touch sensor panel has a resistive film type, a capacitive type, an infrared type, Various methods can be used, such as a touch sensor, an electromagnetic induction sensor, or a surface acoustic wave sensor. It is preferable to use a capacitance type touch sensor as the touch sensor.

[0283] The substrates 151 and 152 are made of glass, quartz, ceramic, sapphire, Resin or the like can be used. The substrate 151 and the substrate 152 are made of a flexible material. This can increase the flexibility of the display panel.

[0284] The adhesive layer can be a photo-curable adhesive such as an ultraviolet curable adhesive, a reaction-curable adhesive, or a heat-curable adhesive. Various curing adhesives such as adhesives and anaerobic adhesives can be used. Epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, E VA (ethylene vinyl acetate) resin, etc. In particular, the moisture permeability of epoxy resin, etc. A material with low viscosity is preferable. Two-component resin may also be used. It may be used.

[0285] The connection layer 242 is made of an anisotropic conductive film (ACF). Conductive Film), Anisotropic Conductive Paste (ACP) Conductive Paste) can be used.

[0286] The light emitting element 190 may be a top emission type, a bottom emission type, a dual emission type, or a The electrode on the light extraction side uses a conductive film that transmits visible light. It is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted.

[0287] The light-emitting element 190 has at least a light-emitting layer 193. As the other layers, a material with high hole injection properties, a material with high hole transport properties, a hole blocking material, an electrode Materials with high electron transport properties, materials with high electron injection properties, electron blocking materials, or bipolar materials The layer may further include a layer containing a substance (a substance having high electron transport properties and hole transport properties). For example, the common layer 112 preferably has one or both of a hole injection layer and a hole transport layer. For example, the common layer 114 may include one or both of an electron transport layer and an electron injection layer. is preferred.

[0288] The common layer 112, the light-emitting layer 193, and the common layer 114 contain low-molecular compounds and high-molecular compounds. The common layer 112 and the light-emitting layer may be made of any of these materials, and may contain inorganic compounds. The layers constituting the common layer 114 and the layer 193 are formed by deposition (including vacuum deposition), transfer, respectively. The layer can be formed by a method such as a copying method, a printing method, an ink jet method, or a coating method.

[0289] The light-emitting layer 193 may contain an inorganic compound such as quantum dots as a light-emitting material.

[0290] The active layer 113 of the light receiving element 110 includes a semiconductor, such as silicon. and organic semiconductors containing organic compounds. An example in which an organic semiconductor is used as the semiconductor in the conductive layer will be shown below. The light-emitting layer 193 of the light-emitting element 190 and the active layer 113 of the light-receiving element 110 are formed by the same method (for example, For example, it can be formed by a vacuum deposition method, which is preferable because it allows the use of common manufacturing equipment.

[0291] The active layer 113 has an n-type semiconductor material, such as fullerene (e.g., C 60 , C 70 Examples of suitable organic semiconductor materials include electron-accepting organic semiconductor materials such as fullerene derivatives. It has a soccer ball-like shape, which is energetically stable. has deep (low) HOMO and LUMO levels. Because of its deep structure, it has extremely high electron-accepting properties. When the π-electron conjugation (resonance) spreads across the surface, the electron donating property (donor property) increases. Because of its spherical shape, the electron-accepting property is high even though the π electrons are widely spread. High electron acceptance allows charge separation to occur quickly and efficiently, making it an effective light-receiving device. It is beneficial. C 60 , C 70 Both have a wide absorption band in the visible light region, especially C 70 is C 60 It is preferred because it has a larger π-electron conjugated system and a wide absorption band in the long wavelength region compared to the above.

[0292] The active layer 113 may be made of an n-type semiconductor material such as a metal complex having a quinoline skeleton. metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, thiazolidinyl compounds, metal complexes having an oxadiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazoline azole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, Lysine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, quinone derivatives, etc. can be done.

[0293] The p-type semiconductor material of the active layer 113 is copper (II) phthalocyanine (Cop per(II) phthalocyanine (CuPc), tetraphenyldibenzo Periflanthene (Tetraphenyldibenzoperiflanthene; DBP), Zinc Phthalocyanine (ZnPc) Examples of electron-donating organic semiconductor materials include tin phthalocyanine (SnPc) and quinacridone. It can be obtained.

[0294] In addition, p-type semiconductor materials include carbazole derivatives, thiophene derivatives, and furan derivatives. Compounds with an aromatic amine skeleton and conductors are also listed. Examples of such derivatives include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, Fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, Indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazo derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, chiral derivatives, Nacridone derivatives, polyphenylene vinylene derivatives, polyparaphenylene derivatives, polyphenylene derivatives Examples include fluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives. .

[0295] For example, the active layer 113 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer 113 may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0296] In addition to the gate, source and drain of the transistor, various wiring and Materials that can be used for conductive layers such as electrodes include aluminum, titanium, chromium, and the like. , nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, tungste Examples of suitable materials include metals such as tungsten and niobium, as well as alloys containing one or more of these metals. Films containing these materials can be used as a single layer or as a laminate structure.

[0297] Examples of the light-transmitting conductive material include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as gallium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphite Alternatively, gold, silver, platinum, magnesium, nickel, tungsten, Metallic materials such as iron, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium and alloy materials containing the metal materials. Alternatively, nitrided metal materials can be used. It is also possible to use a material such as a metal material or an alloy material (or When using a nitride such as these, it is preferable to make it thin enough to have light-transmitting properties. A laminated film of the above materials can be used as the conductive layer. For example, an alloy of silver and magnesium The use of a laminated film of indium tin oxide and indium tin oxide is preferred because it can increase the conductivity. These are conductive layers such as various wirings and electrodes that constitute the display panel, or display elements. It can also be used for a conductive layer (a conductive layer that functions as a pixel electrode or a common electrode) can.

[0298] Examples of insulating materials that can be used for each insulating layer include acrylic, epoxy, and poly. Resin materials such as imide, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride Examples of the insulating material include inorganic insulating materials such as aluminum oxide and the like.

[0299] [Configuration Example 3-2] FIG. 14 shows a cross-sectional view of the display panel 200B. The display panel 200B has a substrate structure The main difference from the display panel 200A is the difference.

[0300] The display panel 200B does not have the substrate 151 and the substrate 152, but has the substrates 153 and 154. , adhesive layer 155, and insulating layer 212.

[0301] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. and protective layer 195 are bonded together by adhesive layer 142.

[0302] The display panel 200B includes an insulating layer 212, a transistor 208, and a The transistor 209, the light receiving element 110, the light emitting element 190, etc. are transposed onto the substrate 153. The substrate 153 and the substrate 154 are each made of flexible material. This makes it possible to improve the flexibility of the display panel 200B.

[0303] The insulating layer 212 includes an insulating layer 261, an insulating layer 262, an insulating layer 263, an insulating layer 264, and An inorganic insulating film that can be used for the insulating layer 265 can be used. The transistor 12 may be a laminated film of an organic insulating film and an inorganic insulating film. The film on the O8 side is preferably an inorganic insulating film.

[0304] The above is a description of an example of the configuration of the display panel.

[0305] [About metal oxides] Metal oxides applicable to the semiconductor layer will be described below.

[0306] In this specification, metal oxides containing nitrogen are also referred to as metal oxides (metal oxides). Metal oxides containing nitrogen are sometimes collectively called metal oxynitrides (metal oxynitrides). For example, zinc oxynitride (ZnON) Nitrogen-containing metal oxides such as the above may be used for the semiconductor layer.

[0307] In this specification, CAAC (c-axis aligned crystal) l), and when written as CAC (Cloud-Aligned Composite) CAAC represents an example of a crystal structure, and CAC represents an example of a function or material configuration. .

[0308] For example, CAC-OS (Oxide Semiconductor) is used for the semiconductor layer. You can be there.

[0309] CAC-OS or CAC-metal oxide is a material that has a conductive function in some parts. The material has insulating properties in some parts and semiconductor properties in the whole material. Note that CAC-OS or CAC-metal oxide is used as the semiconductor of a transistor. When used in a dielectric layer, the conductive function is to allow electrons (or holes) to flow as carriers. The insulating function is to prevent the flow of electrons, which act as carriers. By making the functions of the two complementary, the switching function (On / Off) This function (which turns off the power supply) is given to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, By separating the functions, the functionality of both can be maximized.

[0310] In addition, CAC-OS or CAC-metal oxide is a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. In addition, the conductive region and the insulating region in the material are formed by nanoparticle layers. The conductive and insulating regions may be separated by a bell. In addition, the conductive area may be observed as a cloud-like connected area with a blurred periphery. This may be the case.

[0311] In addition, in the CAC-OS or CAC-metal oxide, a conductive region and The insulating regions are each 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. They may be dispersed in the material at sizes of less than 1 m.

[0312] In addition, CAC-OS or CAC-metal oxide has different band gaps For example, CAC-OS or CAC-metal ox The ide consists of a wide-gap component due to the insulating region and a conductive component due to the conductive region. In this configuration, when carriers flow, In addition, carriers mainly flow in the narrow gap component. The component with a narrow gap acts complementary to the component with a wide gap. Carriers also flow into the wide-gap component in conjunction with the component that has a wide gap. CAC-OS or CAC-metal oxide is used as the channel formation region of the transistor. When used in a transistor, it has a high current driving force in the on-state, i.e., a large on-current. , and high field-effect mobility can be obtained.

[0313] That is, CAC-OS or CAC-metal oxide is a matrix composite. matrix composite, or metal matrix composite It can also be called a matrix composite.

[0314] Oxide semiconductors (metal oxides) are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. As a non-single-crystal oxide semiconductor, for example, CAAC-OS (c- axis aligned crystalline oxide semiconductor ctor), polycrystalline oxide semiconductor, nc-OS (nanocrystalline ox ide semiconductor), pseudo-amorphous oxide semiconductor (a-like OS : amorphous-like oxide semiconductor), and non crystalline oxide semiconductors.

[0315] CAAC-OS has a c-axis orientation and multiple nanocrystals are connected in the ab-plane direction. The crystal structure is distorted by the connection of multiple nanocrystals. In the region, the lattice arrangement is changed between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement. This refers to the point where the direction of the

[0316] Nanocrystals are basically hexagonal, but are not limited to regular hexagonal shapes. They may also have non-regular hexagonal shapes. In addition, the distortion may have lattice arrangements such as pentagons and heptagons. In CAAC-OS, clear grain boundaries are observed even near the strain. It is difficult to confirm the lattice distortion. This is because the CAAC-OS has a crystalline structure in the ab-plane direction. The oxygen atoms are not densely packed, and the bond distance between atoms is reduced by the substitution of metal elements. This is because distortion can be tolerated by changing the

[0317] In addition, the CAAC-OS has a layer containing indium and oxygen (hereinafter referred to as an In layer) and an element A layered crystal structure consisting of layers containing M, zinc, and oxygen (hereinafter referred to as the (M,Zn) layer). (also called layer structure). Indium and element M are mutually substitutable. When the element M in the (M,Zn) layer is replaced with indium, the (In,M,Zn) layer Also, when indium in the In layer is substituted with element M, (In,M) It can also be expressed as a layer.

[0318] CAAC-OS is a highly crystalline metal oxide. Since it is difficult to identify grain boundaries, the decrease in electron mobility caused by grain boundaries is unlikely to occur. In addition, the crystallinity of metal oxides can be reduced by the incorporation of impurities or the generation of defects. Therefore, CAAC-OS is made of impurities and defects (oxygen vacancies (V O :oxyge It can also be said that it is a metal oxide with low vacancy. Metal oxides with AAC-OS have stable physical properties. Metal oxides having the above structure are heat resistant and highly reliable.

[0319] nc-OS is a material that can be used in microscopic areas (e.g., areas between 1 nm and 10 nm, especially areas between 1 nm and 10 nm). The atomic arrangement is periodic in the region of 3 nm or less. There is no regularity in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analytical method, nc-OS can be distinguished from a-like OS and amorphous oxide semiconductor. It may be difficult to distinguish from conductors.

[0320] Indium gallium oxide, a type of metal oxide containing indium, gallium, and zinc, is used. The IGZO nanocrystals mentioned above are stable. In particular, IGZO tends to have difficulty growing crystals in the atmosphere. , small crystals (e.g., crystals of several mm or several cm) are more likely to be formed than large crystals (here, crystals of several mm or several cm). For example, the nanocrystals mentioned above may be structurally more stable.

[0321] The a-like OS is a metal oxide semiconductor with a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has pores or low density regions. The ke-OS has lower crystallinity than the nc-OS and CAAC-OS.

[0322] Oxide semiconductors (metal oxides) have a variety of structures, each with different properties. The oxide semiconductor of one embodiment of the present invention may be an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-li The ke-OS, nc-OS, and CAAC-OS may have two or more of them.

[0323] The metal oxide film that functions as a semiconductor layer is heated with either an inert gas or oxygen gas, or The metal oxide film can be formed by using both of the oxygen flow rate and the oxygen flow rate. There is no particular limitation on the ratio (oxygen partial pressure). However, in order to obtain a transistor with high field effect mobility, In this case, the oxygen flow rate (oxygen partial pressure) during the formation of the metal oxide film is 0% or more. Preferably, it is 30% or less, more preferably 5% to 30% or less, and even more preferably 7% to 15% or less. Preferred.

[0324] The metal oxide preferably has an energy gap of 2 eV or more, and more preferably 2.5 eV or more. It is more preferable that the electron energy is 3 eV or more, and even more preferable that the electron energy is 3 eV or more. The off-state current of a transistor is reduced by using a metal oxide with a wide energy gap. It is possible.

[0325] The substrate temperature during the deposition of the metal oxide film is preferably 350°C or less, and is preferably between room temperature and 200°C. The temperature is more preferably from room temperature to 130° C., and even more preferably from room temperature to 130° C. The temperature is preferably room temperature, as this can increase productivity.

[0326] The metal oxide film can be formed by sputtering. The LD method, PECVD method, thermal CVD method, ALD method, vacuum deposition method, etc. may also be used.

[0327] This concludes the explanation of metal oxides.

[0328] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0329] (Embodiment 3) In this embodiment, a display system to which the display device of one embodiment of the present invention is applied will be described. do.

[0330] A display system according to one embodiment of the present invention includes a display unit (also referred to as a screen) for displaying an image. The light-emitting device is used as a laser pointer. You can be there.

[0331] The light emitting device includes a light source that emits visible laser light and a light source that emits invisible light. is light that does not include visible light, and is composed of ultraviolet light, infrared light, or electromagnetic waves with wavelengths longer than infrared light ( The invisible light may be light with a longer wavelength than the visible light. It is preferable to use infrared light, and it is particularly preferable to use infrared light.

[0332] The display unit of a display device has a plurality of pixels arranged in a matrix to display an image. A pixel has at least one display element and a light receiving element. The display receives laser light and converts it into an electrical signal (also called a first electrical signal). By arranging the pixels in a matrix, the display device can determine the positions where the visible laser light is irradiated. It can be obtained as information.

[0333] The display device also includes a light receiving section for receiving the invisible light in a section different from the display section. .

[0334] The display device detects the position where the visible laser light is irradiated when the invisible light is received by the light receiving section. Based on the information, various processes can be performed. For example, It performs processes such as selecting, executing, and moving objects, as well as text input and drawing functions. In addition, gesture input can be performed according to the trajectory of the irradiation position of the visible laser light. It is also possible to perform processing for the functions of the display system. The processing that can be performed is an example, and depends on the application software installed in the display system. Depending on the input, various processes can be performed.

[0335] In this way, the display system according to one embodiment of the present invention has a function as a laser pointer. The light-emitting device can also function as an input device such as a pointing device. This eliminates the need for input devices such as a mouse or touchpad, which were previously required. This can improve convenience.

[0336] Furthermore, by incorporating information into the invisible light emitted by the light-emitting device, convenience can be further enhanced. For example, by including identification information of the light emitting device in the invisible light, it is possible to The user can also operate the switch simultaneously. Alternatively, information according to the operation method can be included in the invisible light. Using time or timing information, clicks, double clicks, etc. It can also realize functions similar to those of a long press and hold operation. A plurality of switches may be provided, or the switches may be a touchpad or a dial. Analog input is also possible by applying input means such as a laser. When including information, for example, Pulse Position Modulation (PPM) By using modulation methods such as the IR Modulation (IR Modulation) method, data can be superimposed on invisible light. It is preferable that:

[0337] Here, the display element and the light receiving element provided in the display unit of the display device are fabricated on the same substrate. In this case, it is preferable that the display element is an organic electroluminescent device containing an organic compound in the light-emitting layer. The organic photodiode (organic EL element) is used as the light-receiving element, and the active layer contains an organic compound. It is preferable to use a diode. Furthermore, a part of the manufacturing process of the display element and the light receiving element can be performed at the same time. By kneading, the manufacturing cost can be reduced and the manufacturing yield can be increased.

[0338] FIG. 15(A) shows a schematic diagram of a display system 800. The display system 800 is a display device. The display device 810 includes a light emitting device 811 and a light emitting device 812.

[0339] The light emitting device 812 has a switch 851 and a switch 852 provided on the housing. The light emitting device 812 can emit visible light VL and infrared light IR from the tip of the housing. By operating the switch 851, visible light VL can be transmitted to the switch 852. In this example, the switch 851 and the switch 852 emit infrared light IR independently. 52 shows an example in which one physical switch is used for each.

[0340] Visible light VL is highly directional, while infrared light IR has lower directionality compared to visible light VL. It is a bright light.

[0341] As the visible light VL, it is preferable to use a laser beam. For example, a red laser beam (e.g., For example, light with a peak wavelength of 620 nm or more and 700 nm or less), green laser light (for example, (Light with a wavelength between 500 nm and 550 nm, typically around 532 nm) It is preferable to use a laser beam having a peak wavelength in the visible light region (e.g., For example, light in the range of 350 nm to 750 nm may be used, such as blue, yellow, orange, Laser light of various colors, such as deep blue or purple, can also be used.

[0342] Infrared light IR has a peak wavelength in the near-infrared region (750 nm to 2500 nm). It is preferable to use light that is positioned in the direction of the infrared light IR. It is preferable that the viewing angle, or full width at half maximum, is wider than the visible light VL. 30 degrees or more, preferably 40 degrees or more, more preferably 50 degrees or more, and 180 degrees or less It is preferable to use light that is In a state where visible light VL is irradiated to the inside of the display unit 821, infrared light is received by a light receiving unit 830 provided outside the display unit 821. It can emit IR light.

[0343] The display device 811 includes a display unit 821 and a light receiving unit 830 .

[0344] The display unit 821 is an area on the display device 811 where an image is displayed, and can also be called a screen. The display unit 821 receives visible light VL emitted by the light emitting device 812 and displays the visible light VL. It has a function of acquiring position information of the irradiation area 859 where VL is irradiated.

[0345] The display unit 821 includes a plurality of display elements 823 and a plurality of light receiving elements 824. FIG. 15(A) shows an enlarged view of a part of the display unit 821. Here, one pixel 822 has a display element 823R that exhibits red, a display element 823B that exhibits blue, and a a display element 823B that exhibits green, and a display element 823G that exhibits green (hereinafter collectively referred to as display element 823). 824 that receives visible light and converts it into an electrical signal. are.

[0346] The light receiving unit 830 receives the infrared light IR emitted by the light emitting device 812 and converts it into an electrical signal. The light receiving unit 830 may be provided with a plurality of light receiving elements that receive infrared light IR. Alternatively, a configuration having one light receiving element may be used. Although an example in which the display unit 821 is provided outside the display unit 821 is shown, it is located inside the outline of the display unit 821. Alternatively, the light receiving element 824 may be an element capable of receiving both visible light VL and infrared light IR. In this case, the display unit 821 may also function as the light receiving unit 830.

[0347] FIG. 15B shows a display device 811 and a light-emitting device 812 for a user 8 to operate the screen. 60 is shown schematically.

[0348] The user 860 operates the switch 851 of the light emitting device 812 to irradiate visible light VL. In addition, by operating the switch 852 of the light emitting device 812, infrared light I R (not shown) allows the display system 800 to perform various processes.

[0349] An object 861 is displayed on the display unit 821 .

[0350] In FIG. 15B, a user 860 is viewing a display image displayed on a display unit 821 by a light-emitting device 812. 8 shows how the object 861 is moved.

[0351] The illumination area is a part of the object 861 (the upper part of the object 861 in FIG. 15(B)). By irradiating the visible light VL so that the irradiation area 859 is positioned, and moving the irradiation area 859, The object 861 can be moved along the trajectory of the illumination area 859.

[0352] This operation corresponds to a drag operation when using a mouse. For example, user 86 0 is an object that can be displayed by moving the illumination area 859 while holding down the switch 852. Drag the object 861 and release the switch 852 to position the object 861. It can be determined.

[0353] FIG. 15(C) shows a state in which the display system 800 is caused to execute a drawing function. The laser 860 operates the light emitting device 812 to generate a diagram along the locus of the illumination area 859. Shapes (objects 862) and the like can be drawn on the display unit 821.

[0354] Although not shown here, there are also icons for switching the thickness, type, color, etc. of the lines to be drawn. The display unit 821 may display shapes such as rectangles, polygons, circles, and ellipses in addition to lines. , and may have the function of drawing various shapes such as semicircles.

[0355] According to one aspect of the present invention, the information on the irradiation position of the visible laser light irradiated on the display unit and the information on the light receiving unit It can process information contained in the invisible light received by the In addition, one aspect of the present invention is a display system that can realize the display system. Another embodiment of the present invention is a light-emitting device that can realize the display system. The display device and the light-emitting device that can constitute the display system are manufactured and sold separately. It is possible.

[0356] According to one aspect of the present invention, a highly convenient display system is provided, which allows a user to easily display an image using a laser pointer. A display system that allows for multi-person operation, or a display system that allows for multi-person operation of the screen, etc. For example, meetings, presentations, digital signage, or multi-person It can be suitably used for interactive games.

[0357] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0358] (Fourth embodiment) In this embodiment, electronic devices to which the display device of one embodiment of the present invention can be applied are shown in FIGS. This will be explained using FIG.

[0359] The electronic devices of this embodiment include the display device of one embodiment of the present invention. It has the function of displaying the fingerprint, so it can perform biometric authentication on the display and also by touching or proximity. The electronic device according to one embodiment of the present invention can detect unauthorized use. It is difficult to do so and is an electronic device with an extremely high security level. It can improve convenience, etc.

[0360] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Personal computers, computer monitors, digital signage, pachinko machines In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, Digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information Examples include terminals, sound reproduction devices, etc.

[0361] The electronic device of this embodiment is a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, , distance, light, liquid, magnetic, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor or infrared radiation) It may be possible.

[0362] The electronic device of this embodiment can have various functions. For example, various information ( Still images, videos, text images, etc.) on the display, touch panel function, calendar It has the functions of displaying the date, time, etc., and running various software (programs). functions, wireless communication functions, and functions to read programs or data recorded on recording media. They may have abilities, etc.

[0363] The electronic device 6500 shown in FIG. 16A is a mobile phone that can be used as a smartphone. It is a mobile information terminal.

[0364] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, and a button 6504. 504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display unit 6502 has a touch panel function.

[0365] The display device of one embodiment of the present invention can be applied to the display portion 6502.

[0366] FIG. 16B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0367] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501. The space surrounded by the protective member 6510 is provided with a display panel 6511, an optical member 6512, a tab The touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged. do.

[0368] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. The flannel 6513 is fixed by an adhesive layer (not shown).

[0369] In the area outside the display portion 6502, a part of the display panel 6511 is folded back. The FPC6515 is connected to the folded part. IC6516 is mounted on the FPC6515, which is mounted on the printed circuit board 6517. is connected to the terminal.

[0370] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. This allows for extremely lightweight electronic devices. It is extremely thin, so it is possible to install a large-capacity battery 6518 while keeping the thickness of the electronic device small. Also, a part of the display panel 6511 can be folded back and an FPC 6515 can be attached to the back of the pixel area. By arranging the connection part with the substrate, an electronic device with a narrow frame can be realized.

[0371] FIG. 17A shows an example of a television device. The television device 7100 includes a housing 7 The display unit 7000 is built into the housing 101. 101 is shown as a supported configuration.

[0372] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0373] The television device 7100 shown in FIG. 17A is operated by an operation switch provided in the housing 7101. This can be done by a separate remote control 7111. The display unit 7000 may be provided with a touch sensor, and the television can be displayed by touching the display unit 7000 with a finger or the like. The remote control operator 7111 may operate the vision device 7100. The remote control device 71 may have a display unit that displays information output from the remote control device 71. 11. Use the operation keys or touch panel to operate the channel and volume. This allows the image displayed on the display unit 7000 to be manipulated.

[0374] The television device 7100 is configured to include a receiver, a modem, and the like. The receiver can receive general television broadcasts. By connecting to a wireless communication network, it can be transmitted in one direction (sender to receiver) or It is also possible to communicate information in both directions (between sender and receiver, or between receivers). be.

[0375] An example of a notebook personal computer is shown in FIG. The computer 7200 includes a housing 7211, a keyboard 7212, a pointing device The housing 7211 has a display unit 7000 and an external connection port 7213. It is included.

[0376] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0377] 17(C) and 17(D) show examples of digital signage.

[0378] The digital signage 7300 shown in FIG. 17C includes a housing 7301, a display unit 7000, and a speaker 7303. In addition, LED lamps, operation keys (power switch, It may have a variety of functions, including a control switch, connection terminals, various sensors, a microphone, etc. Cut.

[0379] FIG. 17(D) shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 is a display unit 700 provided along the curved surface of a pillar 7401. 0.

[0380] 17C and 17D, the display unit 7000 includes a display device according to one embodiment of the present invention. The position can be applied.

[0381] The larger the display unit 7000, the more information can be displayed at once. The wider the display unit 7000, the more easily it will be noticed by people, which can increase the effectiveness of advertising, for example. can.

[0382] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It is not only a display but also allows users to operate it intuitively, which is desirable. Or when used to provide information such as traffic information, intuitive operation is required. This can improve usability.

[0383] Also, as shown in FIG. 17(C) and FIG. 17(D), the digital signage 7300 The digital signage 7400 is displayed on an information terminal device 7 such as a smartphone carried by a user. It is preferable that the communication device 311 or the information terminal 7411 can be linked by wireless communication. For example, the advertisement information displayed on the display unit 7000 can be displayed on the information terminal 7311 or the information terminal 7320. 411. Also, the information terminal 7311 or the information terminal 7 By operating 411, the display on the display unit 7000 can be switched.

[0384] In addition, the Digital Signage 7300 or Digital Signage 7400 can be used with an information terminal. 7311 or the screen of the information terminal 7411 is used as a control means (controller) to play the game. This allows an unspecified number of users to participate in the game at the same time and have fun. It can be done.

[0385] The electronic devices shown in FIGS. 18A to 18F include a housing 9000, a display portion 9001, a screen Speaker 9003, operation keys 9005 (including power switch or operation switch), connection Terminal 9006, sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance , light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation , including the ability to measure flow, humidity, gradient, vibration, odor or infrared), micro Phone 9008, etc.

[0386] The electronic devices shown in FIGS. 18A to 18F have various functions. Function to display various information (still images, videos, text images, etc.) on the display, touch panel function , calendar, date or time display functions, various software (programs) a function to control processing by wireless communication, a program recorded on a recording medium, or The electronic device can have the function of reading and processing data. The electronic device may have a variety of functions, including but not limited to the above. In addition, a camera or the like may be provided in the electronic device to take still or moving images and store them on a recording medium. Functions for saving images (externally or built into the camera), displaying captured images on the display, etc. may have

[0387] The electronic devices shown in FIGS. 18A to 18F will be described in detail below.

[0388] 18A is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 is For example, the mobile information terminal 9101 can be used as a smartphone. A speaker 9003, a connection terminal 9006, a sensor 9007, etc. may be provided. The terminal 9101 can display text and image information on multiple surfaces. (A) shows an example in which three icons 9050 are displayed. The information 9051 can also be displayed on another surface of the display unit 9001. For example, notifications of incoming e-mails, SNS, phone calls, etc., and the subject of e-mails or SNS Name, sender name, date and time, time, remaining battery level, antenna reception strength, etc. An icon 9050 or the like may be displayed at the position where the information 9051 is displayed.

[0389] 18B is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 is , and has the function of displaying information on three or more surfaces of the display unit 9001. An example is shown in which information 9053 and information 9054 are displayed on different surfaces. The user places the mobile information terminal 9102 in the breast pocket of his / her clothes. The user can also check the information 9053 displayed in a position that can be observed from above. The display can be checked without taking the mobile information terminal 9102 out of a pocket, and for example, a telephone call can be made. You can decide whether to accept it or not.

[0390] 18C is a perspective view showing a wristwatch-type mobile information terminal 9200. The display surface of the display device 9001 is curved, and the display can be performed along the curved display surface. In addition, the mobile information terminal 9200 can communicate with, for example, a headset capable of wireless communication. By doing so, hands-free conversation is also possible. The connection terminal 9006 allows data transmission to and from other information terminals and charging. The charging operation may be performed by wireless power supply.

[0391] 18(D), 18(E), and 18(F) show a foldable portable information terminal 92. 18(D) shows the mobile information terminal 9201 in an unfolded state. Figure 18(F) shows the folded state, and Figure 18(E) shows the state of the folded state from either Figure 18(D) or Figure 18(F). The portable information terminal 9201 is in a folded state. It is highly portable and has a seamless, wide display area when unfolded, making it easy to see the display. The display unit 9001 of the portable information terminal 9201 is connected by a hinge 9055. The display unit 9001 is supported by three housings 9000. For example, the display unit 9001 has a curvature radius of 0.1 m. It can be bent from 1m to 150mm.

[0392] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. [Explanation of symbols]

[0393] C1, C2: Capacitors M1-M3, M5-M8: Transistors V1, V2, V3: Wiring 10: Display device 11: Display unit 12-14: Drive circuit unit 15: Circuit unit 21, 30: Pixels 21B, 21G, 21R: Sub-pixel 22: Imaging pixels 310, 310a, 350, 350a: transistor 311, 351: semiconductor layer 311i: channel formation region 3 11n: Low resistance region 312, 316, 321 to 326, 352: Insulating layer 313, 31 4a, 314b, 315, 331, 333, 341, 353, 354a, 354b, 35 5: Conductive layer 330: Light-emitting element 332: Light-emitting layer 340: Light-receiving element 342: Active layer

Claims

[Claim 1] a first pixel circuit and a second pixel circuit; the first pixel circuit includes a light-receiving element and a first transistor; the second pixel circuit includes a light emitting element and a second transistor; the light receiving element has a first pixel electrode, an active layer, and a common electrode; the light-emitting element has a second pixel electrode, a light-emitting layer, and the common electrode; the first pixel electrode and the second pixel electrode are located on the same plane; the active layer is located on the first pixel electrode; the active layer comprises a first organic compound; the light-emitting layer is located on the second pixel electrode; the light-emitting layer has a second organic compound different from the first organic compound; the common electrode has a portion overlapping with the first pixel electrode via the active layer and a portion overlapping with the second pixel electrode via the light-emitting layer, one of a source and a drain of the first transistor is electrically connected to the first pixel electrode; one of a source and a drain of the second transistor is electrically connected to the second pixel electrode; the first transistor and the second transistor each have a semiconductor layer made of polycrystalline silicon; Display device.

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