Light-emitting device, display, photoelectric conversion device, electronic apparatus, illumination device, movable body, wearable device, and method for manufacturing light-emitting device

Abstract

To provide a technique advantageous for improving luminous efficacy.SOLUTION: A light-emitting device has a plurality of pixels. Each of the plurality of pixels includes a first electrode arranged on a substrate, a second electrode arranged between the first electrode and the substrate, an organic functional layer arranged between the first electrode and the second electrode, and including a luminous layer, and a reflection layer arranged between the second electrode and the substrate. The reflection layer includes a first surface on the side of the second electrode, and a second surface on the side of the substrate. Irregularities on the first surface are smaller than irregularities on the second surface.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a light-emitting device, a display device, a photoelectric conversion device, an electronic device, a lighting device, a mobile object, a wearable device, and a method for manufacturing a light-emitting device. [Background technology]

[0002] Light-emitting devices including light-emitting elements using organic electroluminescence (EL) elements are known. Patent Document 1 discloses an organic device in which a reflective film is disposed between an organic functional film including an organic light-emitting material layer and a semiconductor substrate, and light emitted from the organic functional film toward the semiconductor substrate is reflected by the reflective film. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-072282 Summary of the Invention [Problem to be solved by the invention]

[0004] In order to improve the luminous efficiency of a light emitting device, it is necessary to improve the reflectance of the reflective film.

[0005] One aspect of the present invention provides a technique that is advantageous for improving luminous efficiency. [Means for solving the problem]

[0006] In view of the above-mentioned problems, a light-emitting device according to one embodiment of the present disclosure is a light-emitting device having a plurality of pixels, each of which includes a first electrode arranged on a substrate, a second electrode arranged between the first electrode and the substrate, an organic functional layer including an emitting layer arranged between the first electrode and the second electrode, and a reflective layer arranged between the second electrode and the substrate, wherein the reflective layer has a first surface on the side of the second electrode and a second surface on the side of the substrate, and the unevenness of the first surface is smaller than the unevenness of the second surface. [Effects of the Invention]

[0007] According to the present disclosure, it is possible to provide a technique that is advantageous for improving luminous efficiency. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view showing a configuration example of a light emitting device according to an embodiment of the present invention. [Figure 2] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 3] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 4] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 5] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 6] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 7] FIG. 2 is a cross-sectional view showing a modification of the light emitting device of FIG. [Figure 8] 8A to 8C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. 7. [Figure 9] FIG. 2 is a cross-sectional view showing a modification of the light emitting device of FIG. [Figure 10] 10A to 10C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 11] 10A to 10C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 12] 10A to 10C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 13] FIG. 2 is a cross-sectional view showing a modification of the light emitting device of FIG. [Figure 14] 14A to 14C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. 13. [Figure 15] 14A to 14C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. 13. [Figure 16] 14A to 14C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. 13. [Figure 17] 2 is a cross-sectional view showing a configuration example of a pixel of the light-emitting device of FIG. [Figure 18] 1A and 1B are diagrams illustrating an example of a display device using the light-emitting device of this embodiment. [Figure 19] FIG. 1 is a diagram showing an example of a photoelectric conversion device using the light emitting device of this embodiment. [Figure 20] 1A to 1C are diagrams illustrating examples of electronic devices using the light-emitting device of this embodiment. [Figure 21] 1A and 1B are diagrams illustrating an example of a display device using the light-emitting device of this embodiment. [Figure 22] 1 is a diagram showing an example of a lighting device using the light-emitting device of this embodiment. [Figure 23] 1A and 1B are diagrams showing an example of a moving object using the light emitting device of the present embodiment. [Figure 24] FIG. 1 is a diagram showing an example of a wearable device using the light-emitting device of the present embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0010] A light-emitting device according to an embodiment of the present disclosure will be described with reference to FIGS. 1 to 16. FIG. 1 is a cross-sectional view showing an example of the configuration of a light-emitting device 500 according to this embodiment. The light-emitting device 500 has a plurality of pixels 400. Each of the plurality of pixels 400 includes an electrode 311 arranged on a substrate 100, an electrode 310 arranged between the electrode 311 and the substrate 100, an organic functional layer 302 including a light-emitting layer arranged between the electrode 311 and the electrode 310, and a reflective layer 210 arranged between the electrode 310 and the substrate 100. The reflective layer 210 has a surface 211 on the electrode 310 side and a surface 212 on the substrate 100 side. As shown in FIG. 1, the unevenness of the surface 211 of the reflective layer 210 is smaller than the unevenness of the surface 212. The unevenness of the surface of the reflective layer 210 will be described using a manufacturing method described below. Here, the unevenness of the surfaces 211 and 212 can be confirmed by observation using a scanning electron microscope (SEM), a transmission electron microscope (TEM), or the like. Furthermore, for example, the unevenness of the surfaces 211 and 212 may be defined as surface roughness using a scanning probe microscope (SPM / AFM), or the like. In other words, it can be said that the surface roughness of the surface 211 of the reflective layer 210 is smaller than the surface roughness of the surface 212. In this specification, the surface roughness may be the arithmetic mean roughness (Ra), the maximum height (Rz), or the root mean square roughness (Rms).

[0011] Each of the pixels 400 includes a transistor 110 disposed on the substrate 100. The transistor 110 is used, for example, to control the light emission / non-emission of the pixel 400 and the light emission intensity. Each of the pixels 400 also includes a structure 150, 250 disposed between the reflective layer 210 and the substrate 100, and including a wiring pattern 112 and other components disposed in an insulator (insulating layers 101, 102, 103, 202). In the configuration shown in FIG. 1 , the reflective layer 210 is electrically connected to the transistor 110 via the wiring pattern 112. Furthermore, the reflective layer 210 is electrically connected to an electrode 310. As a result, an electrical signal is sent from the transistor 110 disposed on the substrate 100 to the electrode 310, causing the light-emitting layer disposed in the organic functional layer 302 to emit light at a predetermined brightness. The electrode 310 is separated for each pixel 400 by an insulating layer 301. The insulating layer 301 may also be referred to as a bank, etc.

[0012] An insulating layer 201 is disposed between the reflective layer 210 and the electrode 310. As shown in FIG. 1 , the insulating layer 201 may have different thicknesses depending on the pixels 400. The thickness of the insulating layer 201 may differ depending on the color transmitted by the color filter 304 disposed in each pixel 400. For example, the thickness of the insulating layer 201 may differ between the pixel 400R and the pixel 400G. Furthermore, the thickness of the insulating layer 201 in the pixel 400B may differ from the thickness of the insulating layer 201 in the pixel 400R and the pixel 400G. Here, the color filter 304 disposed in the pixel 400R may transmit red light, the color filter 304 disposed in the pixel 400G may transmit green light, and the color filter 304 disposed in the pixel 400B may transmit green light.

[0013] Light emitted from the organic functional layer 302 (light-emitting layer) toward the substrate 100 is reflected by the reflective layer 210. The light emitted from the organic functional layer 302 (light-emitting layer) toward the electrode 311 and the light reflected by the reflective layer 210 resonate and are amplified at wavelengths corresponding to the thicknesses 221R, 221G, and 221B of the insulating layer 201 of the pixels 400R, 400G, and 400B, respectively. The amplified light is emitted from the pixel 400 through the color filter 304. Here, the thicknesses 221R, 221G, and 221B of the insulating layer 201 at the center of the reflective layer 210 of the pixels 400R, 400G, and 400B are appropriately determined in consideration of the light amplification effect.

[0014] Next, a method for manufacturing the light emitting device 500 will be described. First, as shown in Fig. 2(a), a transistor 110 for controlling the driving of the pixel 400 is formed on a substrate 100. Although not shown in the figures, the substrate 100 may be formed with source / drain regions that constitute the transistor 110, element isolation regions (e.g., STI structure) for electrically isolating the transistors 110, and the like. The substrate 100 may be made of a semiconductor such as silicon.

[0015] After forming the transistor 110, an insulating layer 101 is formed on the substrate 100. The insulating layer 101 may be, for example, BPSG formed by thermal CVD or silicon oxide formed by plasma CVD. The insulating layer 101 may have a single-layer structure or a multi-layer structure composed of multiple layers. After forming the insulating layer 101, a conductor is embedded in an opening formed in the insulating layer 101 using a photolithography process and a dry etching process. Furthermore, a conductive plug 111 is formed as shown in FIG. 2(b) using a planarization process and a dry etching process. The conductive plug 111 may be, for example, a tungsten plug provided with a barrier metal layer such as Ti / TiN.

[0016] Next, an insulating layer 102 is formed on the insulating layer 101. The insulating layer 102 may have a single-layer structure or a multi-layer structure. For example, silicon oxide, silicon nitride, silicon oxynitride, carbon-containing silicon oxide, or fluorine-containing silicon oxide is used for the insulating layer 102. Next, a conductor is embedded in the openings formed in the insulating layer 102 using a photolithography process and a dry etching process, and a planarization process is performed to form a wiring pattern 112 as shown in FIG. 2(c). The wiring pattern 112 is electrically connected to the transistor 110 via a conductive plug 111. The wiring pattern 112 may be a copper wiring pattern having a barrier metal layer such as TaCu. Alternatively, the wiring pattern may be an aluminum wiring pattern having a barrier metal layer such as Ti / TiN. When an aluminum wiring pattern is used as the wiring pattern 112, the insulating layer 102 may be formed on the insulating layer 101 and the wiring pattern 112 after the wiring pattern 112 is patterned using a photolithography process and a dry etching process.

[0017] Next, an insulating layer 103 is formed on the insulating layer 102. The insulating layer 103 may have a single-layer structure or a multi-layer structure. For example, silicon oxide, silicon nitride, silicon oxynitride, carbon-containing silicon oxide, or fluorine-containing silicon oxide may be used for the insulating layer 103. Conductors are embedded in the openings in the insulating layer 103 using a photolithography process and a dry etching process. Furthermore, as shown in FIG. 2(d), a bonding pattern 120 and a dummy bonding pattern 120' are formed using a planarization process or the like. Here, the bonding pattern 120 and the wiring pattern 112 are electrically connected, while the dummy bonding pattern 120' is electrically isolated. The bonding pattern 120 and the dummy bonding pattern 120' may be, for example, a copper wiring pattern having a barrier metal layer such as TaCu. The bonding pattern 120 and the dummy bonding pattern 120' are arranged at an appropriate density. The insulating layer 103 on which the bonding patterns 120 and the dummy bonding patterns 120' are arranged may also be called a bonding layer.

[0018] Through the above steps, a substrate 100 is prepared that includes a structure 150 in which a wiring pattern 112 is arranged in an insulator (insulating layers 101, 102, 103). In the configuration shown in Fig. 2(d), there is only one wiring layer in which the wiring pattern 112 is arranged, but this is not limited to this, and two or more wiring layers may be arranged.

[0019] 3(a) to 3(d) show a process for forming a structure 250 including a reflective layer 210. The process for forming the structure 250 may be performed in parallel with the process for forming the structure 150 on the substrate 100 shown in FIGS. 2(a) to 2(d), or may be performed in any suitable order.

[0020] First, as shown in FIG. 3( a), a material layer 201′ for the insulating layer 201 is formed on a support substrate 200. The support substrate 200 may be made of a semiconductor such as silicon. However, the material used for the support substrate 200 is not limited to a semiconductor such as silicon. Any other appropriate material may be used for the support substrate 200 as long as it can support the structure 250 and can be removed in the process described below. The material layer 201′ for the insulating layer 201 is made of a light-transmitting insulator. The material layer 201′ for the insulating layer 201 may have a single-layer structure or a stacked structure composed of multiple layers. For example, silicon oxide, silicon nitride, silicon oxynitride, etc. may be used for the material layer 201′ for the insulating layer 201.

[0021] After forming the material layer 201' of the insulating layer 201, as shown in FIG. 3(b), the insulating layer 201 is formed using a photolithography process, a dry etching process, or the like. The insulating layer 201 is formed so that the thicknesses of the insulating layer 201 are 221R, 221G, and 221B in the regions 20R, 20G, and 20B that will form the pixels 400R, 400G, and 400B, respectively. That is, the insulating layer 201 is formed by etching the material layer 201' of the insulating layer 201 so that the portions that form the pixel 400R, the portions that form the pixel 400G, and the portions that form the pixel 400B have different thicknesses. For example, if an insulator having a thickness 221R is formed as the material layer 201' of the insulating layer 201, the insulating layer 201 may be formed by etching only the regions 20G and 20B using a photolithography process, a dry etching process, or the like. The insulating layer 201 functions as an optical adjustment film as described above, and therefore has different thicknesses in the regions 20R, 20G, and 20B.

[0022] Next, a reflective material is deposited on the insulating layer 201, and a reflective layer 210 is formed by photolithography and dry etching, as shown in FIG. 3(c). The reflective layer 210 may be made of a highly reflective material such as aluminum, silver, or platinum, or an alloy containing any of these. In particular, aluminum or an alloy containing aluminum as a main component may be used for the reflective layer 210, as this facilitates achieving high definition. A barrier metal layer, such as Ti / TiN, may be formed on the surface where the reflective layer 210 and the insulating layer 201 contact each other.

[0023] 3(c), the reflective layer 210 has irregularities on a surface 212 that is not in contact with the insulating layer 201, which is the surface after the film formation. On the other hand, the irregularities (surface roughness) of a surface 211 of the reflective layer 210 that is in contact with the insulating layer 201 are smaller than the irregularities (surface roughness) of a surface 212 that is not in contact with the insulating layer 201. This is because the irregularities on the upper surface of the insulating layer 201 that forms the reflective layer 210 are flatter than the surface 212, which is the surface after the reflective layer 210 is formed.

[0024] 3(b) and 3(c), the material layer 201' of the insulating layer 201 is etched to an appropriate thickness for each of the regions 20R, 20G, and 20B, and then the reflective layer 210 is formed. However, this is not limited thereto. An insulating layer having a thickness of 221B is first formed, and then an insulating layer having a thickness of 221G is formed in the regions other than the region 20B. Alternatively, the insulating layer 201 may be formed by forming an insulating layer having a thickness of 221R in the regions other than the regions 20G and 20B. In this case, the reflective layer 210 may be formed after the insulating layer 201 is formed, or the reflective layer 210 may be formed in each of the regions 20R, 20G, and 20B once the insulating layer has been formed to a predetermined thickness.

[0025] Next, an insulating layer 202 is formed to cover the insulating layer 201 and the reflective layer 210 using a film formation process, a planarization process, and the like. The insulating layer 202 may have a single-layer structure or a stacked structure composed of multiple layers. For example, silicon oxide, silicon nitride, silicon oxynitride, carbon-containing silicon oxide, fluorine-containing silicon oxide, or the like may be used for the insulating layer 202. Here, the insulating layer 202 is planarized so that the thicknesses of the insulating layer 202 formed on the reflective layer 210 in the regions 20R, 20G, and 20B become thicknesses 222R, 222G, and 222B, respectively.

[0026] After forming the insulating layer 202, a conductor is embedded in the openings formed in the insulating layer 202 using photolithography and dry etching processes. Further, a planarization process is used to form the bonding pattern 220 and the dummy bonding pattern 220' as shown in FIG. 3(d). The bonding pattern 220 and the reflective layer 210 are electrically connected, while the dummy bonding pattern 220' is electrically isolated. A plurality of bonding patterns 220 may be arranged for one reflective layer 210. The bonding pattern 220 and the dummy bonding pattern 220' may be, for example, a copper wiring pattern having a barrier metal layer such as TaCu. The bonding patterns 220 and the dummy bonding patterns 220' are arranged at an appropriate density. The insulating layer 202 on which the bonding patterns 220 and the dummy bonding patterns 220' are arranged may also be referred to as a bonding layer.

[0027] Through the above steps, a structure 250 including the reflective layer 210 is formed on the support substrate 200. In the configuration shown in Fig. 3(d), only the reflective layer 210, the bonding pattern 220, and the dummy bonding pattern 220' are arranged in the structure 250. However, this is not limited thereto, and a wiring layer including one or more wiring patterns may be formed between the reflective layer 210 and the bonding pattern 220 (dummy bonding pattern 220').

[0028] 4(a) and 4(b), modified examples of the structure 250 will be described. Explanations of configurations that may be similar to the above-described structure 250 will be omitted as appropriate, and different configurations will be mainly described.

[0029] After forming the insulating layer 201 as shown in FIG. 3(b), a reflective material constituting the reflective layer 210 and a material constituting the conductive layer 213 are deposited on the insulating layer 201. Next, using photolithography and dry etching, the reflective layer 210 and the conductive layer 213 are formed in contact with and covering the surface 212 of the reflective layer 210, as shown in FIG. 4(a). The reflective layer 210 is made of the same material as described above. The conductive layer 213 is made of an appropriate conductive material. For example, the conductive layer 213 may be a barrier metal layer such as Ti / TiN. In the cross section shown in FIG. 4(a), the unevenness of the surface 211 of the reflective layer 210 in contact with the insulating layer 201 is smaller than the unevenness of the surface 212 not in contact with the insulating layer 201.

[0030] Next, an insulating layer 202 is formed using a film formation process, a planarization process, and the like so as to cover the insulating layer 201, the reflective layer 210, and the conductive layer 213. The insulating layer 202 may have a single-layer structure or a stacked structure composed of multiple layers. For example, silicon oxide, silicon nitride, silicon oxynitride, carbon-containing silicon oxide, fluorine-containing silicon oxide, or the like may be used for the insulating layer 202. Here, the insulating layer 202 is planarized so that the thicknesses of the insulating layer 202 formed on the reflective layer 210 in the regions 20R, 20G, and 20B become 222R, 222G, and 222B, respectively.

[0031] After forming the insulating layer 202, a conductor is embedded in the openings formed in the insulating layer 202 using photolithography and dry etching processes. Furthermore, a planarization process and the like are used to form the bonding pattern 220 and the dummy bonding pattern 220' as shown in FIG. 4(b). Here, the bonding pattern 220 and the reflective layer 210 are electrically connected, while the dummy bonding pattern 220' is electrically isolated. A plurality of bonding patterns 220 may be arranged for one reflective layer 210. The bonding pattern 220 and the dummy bonding pattern 220' may be, for example, a copper wiring pattern having a barrier metal layer such as TaCu. The bonding pattern 220 and the dummy bonding pattern 220' are arranged at an appropriate density. Through the above processes, a structure 250 including the reflective layer 210 is formed on the support substrate 200.

[0032] For example, consider a case where the reflective layer 210 is made of copper-containing aluminum (AlCu). In this case, when the insulating layer 202 is opened up to the reflective layer 210 by a dry etching process or the like, the exposed aluminum of the reflective layer 210 may be oxidized, forming aluminum oxide on the surface 212 of the reflective layer 210. Aluminum oxide is an insulator and may cause poor electrical conduction. Therefore, a conductive layer 213 made of TiN or the like, which is less reactive with oxygen, is disposed to cover the surface 212 of the reflective layer 210. This prevents poor electrical conduction when electrically connecting the reflective layer 210 and the bonding pattern 220. In the configuration shown in FIGS. 4( a) and 4(b), the conductive layer 213 is disposed to cover the entire surface 212 of the reflective layer 210. However, this is not a limitation, and the conductive layer 213 may be disposed to cover only a portion of the surface 212 of the reflective layer 210. More specifically, the conductive layer 213 may be disposed between the reflective layer 210 and the bonding pattern 220. The conductive layer 213 would be disposed between the substrate 100 and the reflective layer 210 in the light-emitting device 500 shown in FIG.

[0033] Next, as shown in Fig. 5(a), a step is performed in which the structure 150 formed on the substrate 100 is bonded to a structure 250 including a reflective layer 210 formed on a support substrate 200. In the following steps, the structure 250 has the configuration shown in Fig. 3(d), but the conductive layer 213 shown in Fig. 4(b) may also be provided.

[0034] In the step shown in FIG. 5(a), the insulating layer 103 (bonding layer) constituting the surface of the structure 150 and the insulating layer 202 (bonding layer) constituting the surface of the structure 250 are bonded. As shown in FIG. 5(a), for example, the structure 250 is placed on the structure 150, and bonded by heat treatment or the like. At this time, the bonding pattern 120 of the structure 150 and the bonding pattern 220 of the structure 250 are bonded to each other, and similarly, the dummy bonding pattern 120′ of the structure 150 and the dummy bonding pattern 220′ of the structure 250 are bonded to each other. By connecting the bonding pattern 120 and the bonding pattern 220 to each other, the transistor 110 that controls the driving of the pixel 400 and the reflective layer 210 are electrically connected.

[0035] Next, a step of removing the support substrate 200 is performed. The support substrate 200 is at least partially removed, more specifically at least in the region where the pixels 400 are arranged, to expose the insulating layer 201. The support substrate 200 may be entirely removed. For example, a thinning process is used to remove the support substrate 200. Examples of the thinning process for removing the support substrate 200 include a back-grinding process, a chemical mechanical polishing process, and an etching process.

[0036] Next, an exposure step is performed in which the support substrate 200 is removed to expose the insulating layer 201, and then an electrode 310, an organic functional layer 302 including an emitting layer, and an electrode 311 are formed on the exposed insulating layer 201. First, as shown in FIG. 5(b), an opening 320 is formed in the periphery of the reflective layer 210 so as to penetrate the insulating layer 201. The opening 320 is formed using a photolithography step and a dry etching step. Furthermore, as shown in FIG. 5(b), the depth of the opening 320 is the same as the thicknesses 221R, 221G, and 221B of the insulating layer 201. This exposes the reflective layer 210.

[0037] After forming the opening 320, an electrode 310 is formed on the insulating layer 201. The electrode 310 is made of a transparent material. For example, indium tin oxide, indium zinc oxide, or the like can be used for the electrode 310. The electrode 310 is electrically connected to the periphery of the reflective layer 210 through the opening 320. The electrode 310 may also be referred to as a lower electrode, or the like. After forming the electrode 310, as shown in FIG. 5(c), an opening 321 is formed using a photolithography process and a dry etching process so as to insulate the electrodes 310 of adjacent pixels 400 from each other.

[0038] Next, as shown in FIG. 6( a), an insulating layer 301 having openings 322 and 323 is formed on the electrode 310 using photolithography and dry etching processes. The insulating layer 301 may be made of, for example, silicon oxide, silicon nitride, silicon oxynitride, carbon-containing silicon oxide, or fluorine-containing silicon oxide. The insulating layer 301 is disposed so as to electrically insulate the electrodes 310 disposed corresponding to each pixel 400 from one another. Furthermore, in order to suppress leakage current to adjacent pixels 400, the openings 322 are disposed so as to surround the pixels 400 in a plan view. If the leakage current to adjacent pixels 400 can be suppressed only by the openings 323 defining the light-emitting regions of the pixels 400, the openings 322 do not need to be formed.

[0039] After forming the insulating layer 301, as shown in FIG. 6( b), an organic functional layer 302 and an electrode 311 are formed to cover the insulating layer 301 and the electrode 310. The organic functional layer 302 includes at least an organic light-emitting material layer and may also include a charge transport layer, a charge blocking layer, and the like. The organic functional layer 302 may be continuously disposed so as to cover the plurality of pixels 400R, 400G, and 400B. "Continuously disposed" can mean that the organic functional layer 302 is connected between the pixels 400, that the organic functional layer 302 is disposed across the plurality of pixels 400, or that one organic functional layer 302 is shared by the plurality of pixels 400.

[0040] The electrode 311 is made of a transparent material so as to transmit light generated in the organic functional layer 302. The electrode 311 may also reflect a portion of the light generated in the organic functional layer 302 toward the reflective layer 210. The electrode 311 may be made of a thin film of a metal such as magnesium or silver, or an alloy containing these as its main component. The electrode 311 may also be referred to as an upper electrode.

[0041] Next, a sealing layer 303 is formed on the electrode 311. The sealing layer 303 is arranged to prevent moisture from entering each component of the light-emitting device 500, such as the substrate 100, the organic functional layer 302, and the electrode 311. The sealing layer 303 may have a single-layer structure or a multi-layer structure composed of multiple layers. For example, silicon nitride or aluminum oxide may be used for the sealing layer 303. As shown in FIG. 1, a color filter 304 is formed on the sealing layer 303. The color filter 304 may transmit different colors of light for the pixel 400R, the pixel 400G, and the pixel 400B. Although not shown in FIG. 1, a microlens may be formed on the color filter 304. For example, a planarization layer or the like may be formed between the color filter 304 and the sealing layer 303.

[0042] As described above, light emitted from the organic functional layer 302 (light-emitting layer) toward the substrate 100 is reflected by the reflective layer 210 and resonates and is amplified at wavelengths corresponding to the thicknesses 221R, 221G, and 221B of the insulating layers 201 of the pixels 400R, 400G, and 400B, respectively. Therefore, in order to improve the light-emitting efficiency of the light-emitting device 500, it is necessary to improve the reflectivity of the reflective layer 210. In the light-emitting device 500 formed by the process described with reference to FIGS. 1 to 6(b), the reflective layer 210 is formed on the insulating layer 201 for the interference structure that resonates and amplifies light. Therefore, the surface 211 of the reflective layer 210, which is the reflective surface of the interference structure in the light-emitting device 500, becomes the interface with the insulating layer 201. Since the unevenness of the upper surface of insulating layer 201 on which reflective layer 210 is formed is flatter than surface 212, which is the surface after reflective layer 210 is formed, the unevenness of surface 211 of reflective layer 210 in contact with insulating layer 201 is smaller than the unevenness of surface 212 not in contact with insulating layer 201. This makes it possible to improve the reflectivity of reflective layer 210 compared to, for example, a case in which reflective layer 210 is formed on insulating layer 202 and then insulating layer 201 is formed. As a result, the luminous efficiency of light-emitting device 500 can be improved.

[0043] Next, a modified example of the light emitting device 500 shown in Fig. 1 will be described with reference to Fig. 7, 8(a), and 8(b). The description will focus on configurations that are different from the above-described embodiment, and descriptions of configurations that may be similar will be omitted as appropriate.

[0044] In the light-emitting device 500 shown in Fig. 1, an electrode 310 and an insulating layer 301 are embedded in an opening 320 provided in an insulating layer 201. On the other hand, in the light-emitting device 500 shown in Fig. 7, a conductive plug 312 is embedded in the opening 320. The electrode 310 and the reflective layer 210 are connected via the conductive plug 312. This has the effect of simplifying the process of forming the electrode 310 compared to the structure shown in Fig. 1.

[0045] 5(b), an opening 320 is formed, and then a conductor is buried in the opening 320, and a planarization process, a dry etching process, or the like is used to form a conductive plug 312, as shown in FIG. 8(a). The conductive plug 312 may be, for example, a tungsten plug provided with a barrier metal such as Ti / TiN.

[0046] Next, an electrode 310 is formed to cover the insulating layer 201 and the conductive plug 312. The electrode 310 is electrically connected to the periphery of the reflective layer 210 via the conductive plug 312. Furthermore, an opening 321 is formed using a photolithography process and a dry etching process, as shown in FIG. 8(b), so as to insulate the electrodes 310 of adjacent pixels 400 from each other. Subsequent processes may be the same as the processes from FIG. 6(a) onwards.

[0047] In this embodiment as well, the unevenness (surface roughness) of surface 211 of reflective layer 210 in contact with insulating layer 201 is smaller than the unevenness (surface roughness) of surface 212 not in contact with insulating layer 201. This makes it possible to improve the reflectance of reflective layer 210, and the luminous efficiency of light-emitting device 500 can be improved.

[0048] Next, modifications of the light emitting device 500 shown in Figures 1 and 7 will be described with reference to Figures 9 to 12. The description will focus on configurations that differ from the above-described embodiment, and descriptions of configurations that may be similar will be omitted as appropriate.

[0049] 1 and 7, the distance between the reflective layer 210 and the substrate 100 in the pixel 400R is different from the distance between the reflective layer 210 and the substrate 100 in the pixel 400G. Similarly, the distance between the reflective layer 210 and the substrate 100 in the pixel 400B is different from the distance between the reflective layer 210 and the substrate 100 in the pixel 400R and the pixel 400G. On the other hand, in the configuration shown in Fig. 9, the difference between the distance between the reflective layer 210 and the substrate 100 in the pixel 400R and the distance between the reflective layer 210 and the substrate 100 in the pixel 400G is smaller than the difference between the thickness of the insulating layer 201 disposed between the electrode 310 and the reflective layer 210 in the pixel 400R and the thickness of the insulating layer 201 in the pixel 400G. Furthermore, the difference between the distance between the reflective layer 210 and the substrate 100 in pixel 400R and the distance between the reflective layer 210 and the substrate 100 in pixel 400B is smaller than the difference between the thickness of the insulating layer 201 in pixel 400R and the thickness of the insulating layer 201 in pixel 400B. Similarly, the difference between the distance between the reflective layer 210 and the substrate 100 in pixel 400G and the distance between the reflective layer 210 and the substrate 100 in pixel 400B is smaller than the difference between the thickness of the insulating layer 201 in pixel 400G and the thickness of the insulating layer 201 in pixel 400B. For example, the distance between the reflective layer 210 and the substrate 100 in pixel 400R, the distance between the reflective layer 210 and the substrate 100 in pixel 400G, and the distance between the reflective layer 210 and the substrate 100 in pixel 400B may be the same. A method for manufacturing the light-emitting device 500 shown in FIG. 9 will now be described. The process of forming the structure 150 on the substrate 100 may be the same as the process described using FIGS. 2(a) to 2(d), so the process of forming the structure 250 on the support substrate 200 will be first described.

[0050] 10(a), a material layer 203' for the structural layer 203 is formed on a support substrate 200. For example, silicon nitride, silicon oxynitride, silicon oxide, carbon-containing silicon oxide, fluorine-containing silicon oxide, etc. may be used for the material layer 203' for the structural layer 203.

[0051] After forming the material layer 203' of the structural layer 203, the structural layer 203 is formed using a photolithography process, a dry etching process, and the like, as shown in Fig. 10(b). The structural layer 203 is formed so that the thicknesses thereof are 223R, 223G, and 223B in the regions 20R, 20G, and 20B corresponding to the pixels 400R, 400G, and 400B, respectively. In other words, the structural layer 203 is formed by etching the material layer 203' of the structural layer 203 so that the portions corresponding to the pixel 400R, the portions corresponding to the pixel 400G, and the portions corresponding to the pixel 400B have different thicknesses.

[0052] 10(c), an insulating layer 201 is formed on the structural layer 203 using a film formation process, a planarization process, and the like. The insulating layer 201 is formed to have thicknesses 221R, 221G, and 221B in the regions 20R, 20G, and 20B that will form the pixels 400R, 400G, and 400B, respectively. The insulating layer 201 is made of a light-transmitting insulator. For example, silicon oxide, silicon nitride, silicon oxynitride, or the like can be used for the insulating layer 201. Here, materials for the structural layer 203 and the insulating layer 201 can be selected so that a sufficient difference in etching rate (selectivity) can be obtained in the etching process of the structural layer 203, which will be described later.

[0053] Next, a reflective material is deposited on the insulating layer 201, and a reflective layer 210 is formed by photolithography and dry etching, as shown in FIG. 10(d). The reflective layer 210 may be made of a highly reflective material such as aluminum, silver, or platinum, or an alloy containing any of these. In particular, aluminum or an alloy containing aluminum as a main component may be used for the reflective layer 210, as this facilitates achieving high definition. A barrier metal layer, such as Ti / TiN, may be formed on the surface where the reflective layer 210 and the insulating layer 201 contact each other.

[0054] 10(d), the unevenness of the surface 211 of the reflective layer 210 in contact with the insulating layer 201 is smaller than the unevenness of the surface 212 that is not in contact with the insulating layer 201. This is because, as in the above-described embodiment, the unevenness of the upper surface of the insulating layer 201 on which the reflective layer 210 is formed is flatter than the surface 212, which is the surface of the reflective layer 210 after it has been formed.

[0055] Next, insulating layer 202 is formed by a film formation process, a planarization process, and the like so as to cover insulating layer 201 and reflective layer 210. Insulating layer 202 may have a single-layer structure or a stacked structure composed of multiple layers. For example, silicon oxide, silicon nitride, silicon oxynitride, carbon-containing silicon oxide, fluorine-containing silicon oxide, or the like can be used for insulating layer 202.

[0056] After forming the insulating layer 202, a conductor is embedded in the openings provided in the insulating layer 202 using a photolithography process and a dry etching process. Furthermore, a planarization process and the like are used to form the bonding pattern 220 and the dummy bonding pattern 220' as shown in FIG. 10(e). Here, the bonding pattern 220 and the reflective layer 210 are electrically connected, while the dummy bonding pattern 220' is electrically isolated. A plurality of bonding patterns 220 may be arranged for one reflective layer 210. The bonding pattern 220 and the dummy bonding pattern 220' may be, for example, a copper wiring pattern having a barrier metal layer such as TaCu. The bonding pattern 220 and the dummy bonding pattern 220' are arranged at an appropriate density.

[0057] Through the above steps, a structure 250 including a reflective layer 210 is formed on the support substrate 200. In the configuration shown in FIG. 10(e), only the reflective layer 210, the bonding pattern 220, and the dummy bonding pattern 220' are arranged in the structure 250. However, this is not limited thereto, and a wiring layer including one or more wiring patterns may be formed between the reflective layer 210 and the bonding pattern 220 (dummy bonding pattern 220'). In addition, a conductive layer 213 as shown in FIGS. 4(a) and 4(b) may be arranged to cover the surface 212 of the reflective layer 210.

[0058] In this embodiment, as shown in Fig. 10(d), the reflective layer 210 is formed on the same plane, which facilitates the formation of the bonding pattern 220 and the dummy bonding pattern 220' shown in Fig. 10(e) and has the effect of suppressing bonding defects. In this drawing, there are only a plurality of reflective layers 210 and bonding patterns 220, but a plurality of wiring layers may be formed between them.

[0059] Next, as shown in FIG. 11(a), a step of bonding the structure 150 formed on the substrate 100 and the structure 250 including the reflective layer 210 formed on the support substrate 200 is performed. In the step shown in FIG. 11(a), the insulating layer 103 (bonding layer) constituting the surface of the structure 150 and the insulating layer 202 (bonding layer) constituting the surface of the structure 250 are bonded. As shown in FIG. 11(a), for example, the structure 250 is placed on the structure 150 and bonded by heat treatment or the like. At this time, the bonding pattern 120 of the structure 150 and the bonding pattern 220 of the structure 250 are bonded to each other, and similarly, the dummy bonding pattern 120′ of the structure 150 and the dummy bonding pattern 220′ of the structure 250 are bonded to each other. By connecting the bonding pattern 120 and the bonding pattern 220 to each other, the transistor 110 that controls the driving of the pixel 400 and the reflective layer 210 are electrically connected.

[0060] 11(b), a step of removing the support substrate 200 is performed. The support substrate 200 is at least partially removed, more specifically, at least in the region where the pixels 400 are arranged. The support substrate 200 may be entirely removed. For example, a thinning process is used to remove the support substrate 200. Examples of the thinning process for removing the support substrate 200 include a back-grinding process, a chemical mechanical polishing process, and an etching process.

[0061] After removing the support substrate 200, a step of removing the structural layer 203 is performed using a wet etching process or the like. The structural layer 203 is at least partially removed, more specifically, at least in the region where the pixels 400 are arranged, to expose the insulating layer 201. The structural layer 203 may be entirely removed. The structural layer 203 can be selectively removed by selecting materials with different etching rates for the insulating layer 201 and the structural layer 203. For example, a chemical solution such as phosphoric acid or fluoronitric acid can be used in the wet etching process. For example, when silicon oxide is used as the insulating layer 201 and silicon nitride is used as the structural layer 203, the structural layer 203 can be selectively removed by using phosphoric acid as the chemical solution.

[0062] After the insulating layer 201 is exposed, as shown in FIG. 11(c), openings 320 are formed at the periphery of the reflective layer 210 so as to penetrate the insulating layer 201. The openings 320 are formed using a photolithography process and a dry etching process. The depth of the openings 320 is the same as the thicknesses 221R, 221G, and 221B of the insulating layer 201, as shown in FIG. 11(c). This exposes the reflective layer 210.

[0063] Next, an electrode 310 is formed on the insulating layer 201. The electrode 310 is formed of a transparent material. For example, indium tin oxide, indium zinc oxide, or the like can be used for the electrode 310. The electrode 310 is electrically connected to the periphery of the reflective layer 210 through an opening 320. As shown in FIG. 7, a conductive plug 312 may be embedded in the opening 320, and the electrode 310 may be formed thereon. After the electrode 310 is formed, as shown in FIG. 12, an opening 321 is formed using a photolithography process and a dry etching process so as to insulate the electrodes 310 of adjacent pixels 400 from each other. Subsequent processes may be the same as those from FIG. 6(a) onwards, and therefore description thereof will be omitted.

[0064] In this embodiment as well, the unevenness (surface roughness) of surface 211 of reflective layer 210 in contact with insulating layer 201 is smaller than the unevenness (surface roughness) of surface 212 not in contact with insulating layer 201. This makes it possible to improve the reflectance of reflective layer 210, and the luminous efficiency of light-emitting device 500 can be improved.

[0065] Next, further modifications of the light emitting device 500 shown in Fig. 1 will be described with reference to Fig. 13 to Fig. 16. The description will focus on configurations that differ from the above-described embodiment, and descriptions of configurations that may be similar will be omitted as appropriate.

[0066] In the configurations shown in FIGS. 1, 7, and 9, the transistor 110 and the electrode 310 are electrically connected via the reflective layer 210. Therefore, the reflective layer 210 is electrically connected to the transistor via the wiring pattern 112. On the other hand, in the configuration shown in FIG. 13, a conductive pattern 210' is arranged in the pixel 400 on the side of the insulating layer 202 opposite the substrate 100 and electrically connected to the electrode 310. The conductive pattern 210' is electrically connected to the transistor 110 via the wiring pattern 112, resulting in an electrical connection between the transistor 110 and the electrode 310. The conductive pattern 210' may be a pattern formed simultaneously with the reflective layer 210, as described below. Therefore, the reflective layer 210 and the conductive pattern 210' may contain the same material. The reflective layer 210 and the conductive pattern 210' may be made of the same material. In other words, in each pixel 400, the conductive pattern 210' is arranged in a layer that is the same distance from the reflective layer 210 and the substrate 100. A method for manufacturing the light emitting device 500 shown in FIG. 13 will now be described.

[0067] 14(a), a transistor 110 for controlling the driving of a pixel 400 is formed on a substrate 100. Although not shown in the figures, a source / drain region constituting the transistor 110, an element isolation region (e.g., an STI structure) for electrically isolating the transistors 110, and the like may be formed on the substrate 100. For example, a semiconductor such as silicon may be used for the substrate 100.

[0068] After forming the transistor 110, an insulating layer 101 is formed on the substrate 100. The insulating layer 101 may be, for example, BPSG formed by thermal CVD or silicon oxide formed by plasma CVD. The insulating layer 101 may have a single-layer structure or a multi-layer structure composed of multiple layers. After forming the insulating layer 101, a conductor is embedded in an opening formed in the insulating layer 101 using a photolithography process and a dry etching process. Then, a conductive plug 111 is formed as shown in FIG. 2(b) using a planarization process and a dry etching process. The conductive plug 111 may be, for example, a tungsten plug provided with a barrier metal layer such as Ti / TiN.

[0069] Next, an insulating layer 102 is formed on the insulating layer 101. The insulating layer 102 may have a single-layer structure or a multi-layer structure. For example, silicon oxide, silicon nitride, silicon oxynitride, carbon-containing silicon oxide, or fluorine-containing silicon oxide may be used for the insulating layer 102. Next, a conductor is embedded in the openings formed in the insulating layer 102 using a photolithography process and a dry etching process, and a wiring pattern 112 is formed using a planarization process, as shown in FIG. 14(c). The wiring pattern 112 is electrically connected to the transistor 110 via a conductive plug 111. The wiring pattern 112 may be a copper wiring pattern having a barrier metal layer such as TaCu. Alternatively, the wiring pattern may be an aluminum wiring pattern having a barrier metal layer such as Ti / TiN. When an aluminum wiring pattern is used as the wiring pattern 112, the insulating layer 102 may be formed on the insulating layer 101 and the wiring pattern 112 after the wiring pattern 112 is patterned using a photolithography process and a dry etching process.

[0070] Next, an insulating layer 103 is formed on the insulating layer 102. The insulating layer 103 may have a single-layer structure or a multi-layer structure. For example, silicon oxide, silicon nitride, silicon oxynitride, carbon-containing silicon oxide, or fluorine-containing silicon oxide may be used for the insulating layer 103. Conductors are embedded in the openings in the insulating layer 103 using a photolithography process and a dry etching process. Furthermore, as shown in FIG. 14(d), a bonding pattern 120 and a dummy bonding pattern 120′ are formed using a planarization process or the like. Here, the bonding pattern 120 and the wiring pattern 112 are electrically connected, while the dummy bonding pattern 120′ is electrically isolated. The bonding pattern 120 and the dummy bonding pattern 120′ may be, for example, a copper wiring pattern having a barrier metal layer such as TaCu. The bonding pattern 120 and the dummy bonding pattern 120′ are arranged at an appropriate density.

[0071] Through the above steps, a substrate 100 is prepared that includes a structure 150 in which a wiring pattern 112 is disposed in an insulator (insulating layers 101, 102, 103). In the configuration shown in Fig. 14(d), there is only one wiring layer in which the wiring pattern 112 is disposed, but this is not limited to this, and two or more wiring layers may be disposed.

[0072] 15(a) to 15(d) show a process for forming a structure 250 including a reflective layer 210. The process for forming the structure 250 may be performed in parallel with the process for forming the structure 150 on the substrate 100 shown in FIGS. 14(a) to 14(d), or may be performed in any suitable order.

[0073] First, as shown in FIG. 15( a), a material layer 201′ for the insulating layer 201 is formed on a support substrate 200. The support substrate 200 may be made of a semiconductor such as silicon. However, the material used for the support substrate 200 is not limited to a semiconductor such as silicon. Any other appropriate material may be used for the support substrate 200 as long as it can support the structure 250 and can be removed in the process described below. The material layer 201′ for the insulating layer 201 is made of a light-transmitting insulator. The material layer 201′ for the insulating layer 201 may have a single-layer structure or a stacked structure composed of multiple layers. For example, silicon oxide, silicon nitride, silicon oxynitride, etc. may be used for the material layer 201′ for the insulating layer 201.

[0074] After forming the material layer 201' of the insulating layer 201, as shown in FIG. 15(b), the insulating layer 201 is formed using a photolithography process, a dry etching process, and the like. The insulating layer 201 is formed so that the thicknesses of the insulating layer 201 are 221R, 221G, and 221B in the regions 20R, 20G, and 20B that will form the pixels 400R, 400G, and 400B, respectively. That is, the insulating layer 201 is formed by etching the material layer 201' of the insulating layer 201 so that the portions that form the pixel 400R, the portions that form the pixel 400G, and the portions that form the pixel 400B have different thicknesses. For example, if an insulator having a thickness 221R is formed as the material layer 201' of the insulating layer 201, the insulating layer 201 may be formed by etching only the regions 20G and 20B using a photolithography process, a dry etching process, and the like. The insulating layer 201 functions as an optical adjustment film as described above, and therefore has different thicknesses in the regions 20R, 20G, and 20B.

[0075] Next, a reflective material is deposited on the insulating layer 201, and a reflective layer 210 and a conductive pattern 210' are formed using a photolithography process and a dry etching process, as shown in FIG. 15(c). The reflective layer 210 and the conductive pattern 210' may be made of a highly reflective material such as aluminum, silver, or platinum, or an alloy containing these. In particular, aluminum or an alloy containing aluminum as a main component may be used for the reflective layer 210 and the conductive pattern 210', as this facilitates achieving high definition. A barrier metal layer, such as Ti / TiN, may be formed on the surface where the reflective layer 210 and the insulating layer 201 contact each other.

[0076] 15(c), the unevenness of the surface 211 of the reflective layer 210 in contact with the insulating layer 201 is smaller than the unevenness of the surface 212 that is not in contact with the insulating layer 201. This is because, as in the above-described embodiment, the unevenness of the upper surface of the insulating layer 201 on which the reflective layer 210 is formed is flatter than the surface 212, which is the surface of the reflective layer 210 after it has been formed.

[0077] 15(b) and 15(c), the material layer 201' of the insulating layer 201 is etched to an appropriate thickness for each of the regions 20R, 20G, and 20B, and then the reflective layer 210 is formed. However, this is not limited thereto. An insulating layer having a thickness of 221B is first formed, and then an insulating layer having a thickness of 221G is formed in the region other than the region 20B. Alternatively, the insulating layer 201 may be formed by forming an insulating layer having a thickness of 221R in the region other than the regions 20G and 20B. In this case, the reflective layer 210 may be formed after the insulating layer 201 is formed, or the reflective layer 210 may be formed in each of the regions 20R, 20G, and 20B once the insulating layer has been formed to a predetermined thickness.

[0078] Next, an insulating layer 202 is formed using a film formation process, a planarization process, and the like to cover the insulating layer 201, the reflective layer 210, and the conductive pattern 210'. Therefore, the reflective layer 210 and the conductive pattern 210' are in contact with the insulating layer 202. The insulating layer 202 may have a single-layer structure or a multi-layer structure composed of multiple layers. For example, silicon oxide, silicon nitride, silicon oxynitride, carbon-containing silicon oxide, fluorine-containing silicon oxide, or the like may be used for the insulating layer 202. Here, the insulating layer 202 is planarized so that the thicknesses of the insulating layer 202 formed on the reflective layer 210 in the regions 20R, 20G, and 20B become 222R, 222G, and 222B, respectively.

[0079] After forming the insulating layer 202, a conductor is embedded in the openings provided in the insulating layer 202 using a photolithography process and a dry etching process. Furthermore, a planarization process or the like is used to form the bonding pattern 220 and the dummy bonding pattern 220' as shown in FIG. 15(d). Here, the bonding pattern 220 and the reflective layer 210 are electrically connected, while the dummy bonding pattern 220' is electrically isolated and not connected. A plurality of bonding patterns 220 may be arranged for one reflective layer 210. The bonding pattern 220 and the dummy bonding pattern 220' may be, for example, a copper wiring pattern having a barrier metal layer such as TaCu. The bonding pattern 220 and the dummy bonding pattern 220' are arranged at an appropriate density.

[0080] Through the above steps, a structure 250 including the reflective layer 210 is formed on the support substrate 200. In the configuration shown in Fig. 15(d), only the reflective layer 210, the bonding pattern 220, and the dummy bonding pattern 220' are arranged in the structure 250. However, this is not limited thereto, and a wiring layer including one or more wiring patterns may be formed between the reflective layer 210 and the bonding pattern 220 (dummy bonding pattern 220').

[0081] Next, as shown in FIG. 16(a), a step of bonding the structure 150 formed on the substrate 100 and the structure 250 including the reflective layer 210 formed on the support substrate 200 is performed. In the step shown in FIG. 16(a), the insulating layer 103 (bonding layer) constituting the surface of the structure 150 and the insulating layer 202 (bonding layer) constituting the surface of the structure 250 are bonded. As shown in FIG. 16(a), for example, the structure 250 is placed on the structure 150 and bonded by heat treatment or the like. At this time, the bonding pattern 120 of the structure 150 and the bonding pattern 220 of the structure 250 are bonded to each other, and similarly, the dummy bonding pattern 120′ of the structure 150 and the dummy bonding pattern 220′ of the structure 250 are bonded to each other. By connecting the bonding pattern 120 and the bonding pattern 220 to each other, the transistor 110 that controls the driving of the pixel 400 and the reflective layer 210 are electrically connected.

[0082] Next, a step of removing the support substrate 200 is performed. The support substrate 200 is at least partially removed, more specifically at least in the region where the pixels 400 are arranged, to expose the insulating layer 201. The support substrate 200 may be entirely removed. For example, a thinning process is used to remove the support substrate 200. Examples of the thinning process for removing the support substrate 200 include a back-grinding process, a chemical mechanical polishing process, and an etching process.

[0083] After exposing the insulating layer 201, as shown in FIG. 16(b), openings 320 are formed through the insulating layer 201 on the conductive pattern 210′ ​​using photolithography and dry etching processes. The depth of the openings 320 is the same as the thicknesses 221R, 221G, and 221B of the insulating layer 201, as shown in FIG. 16(b). This exposes the conductive pattern 210′.

[0084] After forming the opening 320, an electrode 310 is formed on the insulating layer 201. The electrode 310 is formed of a transparent material. For example, indium tin oxide, indium zinc oxide, or the like can be used for the electrode 310. The electrode 310 is electrically connected to the conductive pattern 210′ ​​through the opening 320. As shown in FIG. 7, a conductive plug 312 may be embedded in the opening 320, and the electrode 310 may be formed thereon. After forming the electrode 310, as shown in FIG. 16(c), an opening 321 is formed using photolithography and dry etching processes so as to insulate the electrodes 310 of adjacent pixels 400 from each other. Subsequent steps may be the same as those from FIG. 6(a) onward, and therefore description thereof will be omitted.

[0085] 13, it is possible to form a plurality of openings 320 that connect the electrode 310 and the conductive pattern 210′, which is effective in suppressing poor conduction between the transistor 110 and the electrode 310.

[0086] In this embodiment as well, the unevenness (surface roughness) of surface 211 of reflective layer 210 in contact with insulating layer 201 is smaller than the unevenness (surface roughness) of surface 212 not in contact with insulating layer 201. This makes it possible to improve the reflectance of reflective layer 210, and the luminous efficiency of light-emitting device 500 can be improved.

[0087] The above-described embodiments may be combined as appropriate. For example, as shown in FIG. 9, a conductive pattern 210′ ​​may be combined with a configuration in which the distance between the reflective layer 210 and the substrate 100 is the same in each pixel 400.

[0088] Here, application examples in which the light-emitting device 500 of this embodiment is applied to a display device, a photoelectric conversion device, an electronic device, a lighting device, a mobile object, and a wearable device will be described with reference to Figures 17(a) and 17(b) to Figures 24(a) and 24(b). The description will be given assuming that an organic light-emitting element (OLED), such as an organic EL element using an organic light-emitting material, is disposed in the pixel 400 of the light-emitting device 500. First, details of each component disposed in the pixel 400 of the above-mentioned light-emitting device 500 will be shown, and then application examples will be described.

[0089] An organic light-emitting device according to one embodiment of the present invention has a first electrode, a second electrode, and an organic compound layer disposed between these electrodes. One of the first electrode and the second electrode is an anode and the other is a cathode. In the organic light-emitting device of this embodiment, the organic compound layer may be a single layer or a laminate consisting of multiple layers, as long as it has an emitting layer. If the organic compound layer is a laminate consisting of multiple layers, the organic compound layer may include, in addition to the emitting layer, a hole injection layer, a hole transport layer, an electron blocking layer, a hole / exciton blocking layer, an electron transport layer, an electron injection layer, etc. The emitting layer may also be a single layer or a laminate consisting of multiple layers. If the emitting layer is a multi-layer, a charge generation layer may be disposed between the emitting layers. The charge generation layer may be composed of a compound having a lower LUMO than the hole transport layer, and the LUMO of the charge generation layer may be lower than the HOMO of the hole transport layer. Here, the molecular orbital energy of the organic compound layer may be the molecular orbital energy of the organic compound having the largest weight ratio in the organic compound layer.

[0090] Here, the closer the HOMO and LUMO are to the vacuum level, the higher they are described as being. The LUMO of the charge generation layer being lower than the HOMO of the hole transport layer means that the LUMO of the charge generation layer is closer to the vacuum level than the HOMO of the hole transport layer.

[0091] In this specification, the HOMO and LUMO can be calculated using molecular orbital calculations. The molecular orbital calculations are performed using density functional theory (DFT) or the like, with the functional being B3LYP and the basis set being 6-31G.* It is also the case that the range of graphical designs is Gaussian09(Gaussian09). ,RevisionC.01,MJFrisch,GWTrucks,HBSchlegel,GEScus area, MARobb, JRCheeseman, G. Scalmani, V. Barone, B. Mennucci, G. Petersson, H. Nakatsuji, M. Caricato, X. Li, HPHr atchian, AFIzmaylov, J. Bloino, G. Zheng, JLSonnenberg, M. Hada, M. Ehara, K. Toyota, R. Fukuda, J. Hasegawa, M. Ish ida,T.Nakajima,Y.Honda,O.Kitao,H.Nakai,T.Vreven,JAMontgomery,Jr.,JEPeralta,F.Ogliaro,M.Bearpark,JJH eyd, E. Brothers, KNKudin, VNStaroverov, T. Keith, R. Kobayashi, J. Normand, K. Raghavachari, A. Rendell, JCBuran t,SSIyengar,J.Tomasi,M.Cossi,N.Rega,JMMillam,M.Klene,JEKnox,JBCross,V.Bakken,C.Adamo,J.Jaramillo,R. Gomperts,REStratmann,O.Yazyev,AJAustin,R.Cammi,C.Pomelli,JWOchterski,RLMartin,K.Morokuma,VGZakrzews ki,GAVoth,P.Salvador,JJDannenberg,S.Dapprich,ADDaniels,O.Farkas,JBForesman,JVOrtiz,JCioslowski,and DJFox,Gaussian,Inc.,Wallingford CT,2010.)

[0092] The HOMO and LUMO in this specification can be calculated using the ionization potential and band gap. The HOMO can be estimated by measuring the ionization potential. The ionization potential can be measured by dissolving the compound to be measured in a solvent such as toluene and using a measuring device such as an AC-3. The band gap can be measured by dissolving the compound to be measured in a solvent such as toluene and irradiating it with excitation light. The band gap can be measured by measuring the absorption edge of the excitation light. Alternatively, the compound to be measured can be deposited on a substrate such as glass and irradiated with excitation light on the deposited film. The band gap can be measured by measuring the absorption edge of the absorption spectrum where the deposited film absorbs the excitation light.

[0093] The LUMO can be calculated using the band gap and ionization potential: subtracting the ionization potential from the band gap gives the LUMO.

[0094] The LUMO can also be estimated from the reduction potential. For example, the one-electron reduction potential can be estimated using CV (cyclic volmetry) measurements. CV measurements are performed, for example, in a 0.1 M tetrabutylammonium perchlorate solution in DMF, with an Ag / Ag reference electrode. + The LUMO can be estimated by adding -4.8 eV, the difference between the reduction potential of the compound and that of ferrocene, to the reduction potential of the compound obtained.

[0095] If necessary, conventionally known low-molecular-weight and high-molecular-weight hole-injecting or hole-transporting compounds, host compounds, light-emitting compounds, electron-injecting or electron-transporting compounds, etc. may be used together. Examples of these compounds are given below.

[0096] Suitable hole injection and transport materials are those with high hole mobility that facilitates hole injection from the anode and transports the injected holes to the light-emitting layer. Furthermore, materials with high glass transition temperatures are suitable to reduce film quality degradation, such as crystallization, in organic light-emitting devices. Examples of low-molecular-weight and high-molecular-weight materials with hole injection and transport properties include triarylamine derivatives, arylcarbazole derivatives, phenylenediamine derivatives, stilbene derivatives, phthalocyanine derivatives, porphyrin derivatives, poly(vinylcarbazole), poly(thiophene), and other conductive polymers. Furthermore, the above-mentioned hole injection and transport materials are also suitable for use in electron blocking layers. Specific examples of compounds that can be used as hole injection and transport materials are listed below, but are not limited to these.

[0097] [ka]

[0098] Among the hole transport materials listed above, HT16 to HT18 can reduce the driving voltage when used in a layer in contact with the anode. HT16 is widely used in organic light-emitting devices. HT2, HT3, HT4, HT5, HT6, HT10, and HT12 may be used in an organic compound layer adjacent to HT16. Furthermore, multiple materials may be used in one organic compound layer.

[0099] Examples of luminescent materials that are mainly involved in luminescence function include fused ring compounds (e.g., fluorene derivatives, naphthalene derivatives, pyrene derivatives, perylene derivatives, tetracene derivatives, anthracene derivatives, rubrene, etc.), quinacridone derivatives, coumarin derivatives, stilbene derivatives, organoaluminum complexes such as tris(8-quinolinolato)aluminum, iridium complexes, platinum complexes, rhenium complexes, copper complexes, europium complexes, ruthenium complexes, and polymer derivatives such as poly(phenylenevinylene) derivatives, poly(fluorene) derivatives, and poly(phenylene) derivatives.

[0100] Specific examples of compounds that can be used as light-emitting materials are shown below, but the present invention is not limited to these.

[0101] [ka]

[0102] [ka]

[0103] When the light-emitting material is a hydrocarbon compound, it is suitable because it can reduce the decrease in light-emitting efficiency due to exciplex formation and the decrease in color purity due to the change in the emission spectrum of the light-emitting material due to exciplex formation.

[0104] Hydrocarbon compounds are compounds composed only of carbon and hydrogen, and among the above-mentioned exemplary compounds, BD7, BD8, GD5 to GD9, and RD1 are mentioned.

[0105] When the light-emitting material is a fused polycyclic ring containing a five-membered ring, it is suitable because it has a high ionization potential, is resistant to oxidation, and forms a device with a long durability and life. Among the above-mentioned exemplary compounds, BD7, BD8, GD5 to GD9, and RD1 are examples.

[0106] Examples of the light-emitting layer host or light-emitting assist material contained in the light-emitting layer include aromatic hydrocarbon compounds or derivatives thereof, as well as carbazole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, organoaluminum complexes such as tris(8-quinolinolato)aluminum, and organic beryllium complexes.

[0107] Specific examples of compounds that can be used as the light-emitting layer host or light-emitting assist material contained in the light-emitting layer are shown below, but the present invention is not limited to these.

[0108] [ka]

[0109] The host material may be a hydrocarbon compound. A hydrocarbon compound is a compound composed only of carbon and hydrogen, and examples of the above-mentioned compounds include EM1 to EM12 and EM16 to EM27. From the viewpoint of stability, host materials that do not have a carbon-heteroatom bond in the single bond connecting the aryl group units in their structure, such as F3 in Compound 1, are more suitable.

[0110] The electron transporting material can be arbitrarily selected from those capable of transporting electrons injected from the cathode to the light-emitting layer, and is selected taking into consideration the balance with the hole mobility of the hole transporting material, etc. Examples of materials having electron transport properties include oxadiazole derivatives, oxazole derivatives, pyrazine derivatives, triazole derivatives, triazine derivatives, quinoline derivatives, quinoxaline derivatives, phenanthroline derivatives, organoaluminum complexes, and fused ring compounds (e.g., fluorene derivatives, naphthalene derivatives, chrysene derivatives, anthracene derivatives, etc.). Furthermore, the above electron transporting materials are also suitable for use in hole-blocking layers.

[0111] Specific examples of compounds that can be used as electron transporting materials are shown below, but the present invention is not limited to these.

[0112] [ka]

[0113] The electron injection material can be selected from those that allow easy electron injection from the cathode, taking into consideration the balance with hole injection properties. Organic compounds include n-type dopants and reducing dopants. Examples include compounds containing alkali metals such as lithium fluoride, lithium complexes such as lithium quinolinol, benzimidazolidene derivatives, imidazolidene derivatives, fulvalene derivatives, and acridine derivatives.

[0114] It can also be used in combination with the above electron transporting material.

[0115] Structure of organic light-emitting element The organic light-emitting element is provided by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, etc. may be provided on the cathode. When a color filter is provided, a planarizing layer may be provided between the protective layer and the color filter. The planarizing layer may be made of an acrylic resin, etc. The same applies when a planarizing layer is provided between the color filter and the microlens.

[0116] substrate Examples of the substrate include quartz, glass, silicon wafer, resin, and metal. The substrate may also include switching elements such as transistors and wiring patterns, with an insulating layer provided thereon. The insulating layer may be made of any material as long as it allows contact holes to be formed so that wiring patterns can be formed between the first electrode and the substrate, and insulation from unconnected wiring patterns is ensured. For example, the insulating layer may be made of a resin such as polyimide, silicon oxide, silicon nitride, or the like.

[0117] electrode A pair of electrodes can be used as the electrodes. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with a higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0118] The anode may be made of a material with a high work function. For example, simple metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, and tungsten, mixtures containing these metals, alloys of these metals, and metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and zinc indium oxide can be used. Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used as the anode.

[0119] These electrode materials may be used alone or in combination of two or more. The anode may be composed of one layer or multiple layers.

[0120] When the electrode is used as a reflective electrode, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or alloys thereof, or laminates thereof can be used. The above materials can also function as a reflective film without functioning as an electrode. Furthermore, when a transparent electrode is used as the electrode, a transparent conductive oxide layer such as indium tin oxide (ITO) or indium zinc oxide can be used, but is not limited to these. Photolithography technology can be used to form the electrode.

[0121] On the other hand, a material with a low work function may be selected as the cathode material. Examples include simple metals such as alkali metals (e.g., lithium), alkaline earth metals (e.g., calcium), aluminum, titanium, manganese, silver, lead, and chromium, as well as mixtures containing these metals. Alternatively, alloys combining these simple metals may be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, and zinc-silver may be used. Metal oxides such as indium tin oxide (ITO) may also be used. These electrode materials may be used alone or in combination. The cathode may have a single-layer or multi-layer structure. Silver may be used as the cathode, and a silver alloy may be used to reduce silver aggregation. The alloy ratio is not important as long as silver aggregation is reduced. For example, the silver:other metal ratio may be 1:1 or 3:1.

[0122] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but using a DC or AC sputtering method, for example, can provide good coverage of the formed film and reduce the resistance of the cathode.

[0123] Pixel isolation layer The pixel separation layer may be formed of silicon oxides such as silicon nitride (SiN), silicon oxynitride (SiON), or silicon oxide (SiO) formed using a chemical vapor deposition (CVD) method. To increase the in-plane resistance of the organic compound layer, the thickness of the organic compound layer, particularly the hole transport layer, may be thinned on the sidewalls of the pixel separation layer. Specifically, the thickness of the organic compound layer on the sidewalls can be thinned by increasing the taper angle of the sidewalls of the pixel separation layer or the thickness of the pixel separation layer, thereby increasing vignetting during deposition.

[0124] On the other hand, the sidewall taper angle and film thickness of the pixel separation layer can be adjusted to the extent that voids are not formed in the protective layer formed thereon. By preventing voids from being formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, deterioration of reliability such as the occurrence of dark spots and poor conduction of the second electrode can be reduced.

[0125] According to this embodiment, charge leakage to adjacent pixels can be effectively suppressed even if the taper angle of the sidewall of the pixel separation layer is not steep. As a result of this study, it was found that charge leakage can be sufficiently reduced if the taper angle is between 60 degrees and 90 degrees. The thickness of the pixel separation layer may be between 10 nm and 150 nm. Similar effects can also be achieved even if the pixel separation layer is composed only of pixel electrodes without a pixel separation layer. However, in this case, short circuits in organic light-emitting elements can be reduced by making the thickness of the pixel electrode less than half that of the organic layer or by making the edge of the pixel electrode forward tapered at less than 60 degrees.

[0126] Furthermore, even when the first electrode is a cathode and the second electrode is an anode, a wide color gamut and low-voltage operation are possible by forming an electron transport material and a charge transport layer, and an emitting layer on the charge transport layer.

[0127] organic compound layer The organic compound layer may be formed as a single layer or as multiple layers. When multiple layers are present, they may be referred to as hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc., depending on their functions. The organic compound layer is primarily composed of organic compounds but may also contain inorganic atoms or compounds. The organic compound layer may contain, for example, copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, etc. The organic compound layer may be disposed between the first electrode and the second electrode, or may be disposed in contact with the first electrode and the second electrode. When multiple light-emitting layers are present, a charge generation section may be disposed between the first and second light-emitting layers. The charge generation section may contain an organic compound having a lowest unoccupied molecular orbital energy (LUMO) of -5.0 eV or less. The same applies when a charge generation section is disposed between the second and third light-emitting layers.

[0128] protective layer A protective layer may be provided on the cathode. For example, by adhering glass with a moisture absorbent on the cathode, the penetration of moisture and other contaminants into the organic compound layer can be reduced, thereby reducing the occurrence of display defects. In another embodiment, a passivation layer such as silicon nitride may be provided on the cathode to reduce the penetration of moisture and other contaminants into the organic compound layer. For example, after forming the cathode, the cathode may be transferred to another chamber without breaking the vacuum, and a 2 μm-thick silicon nitride may be formed by CVD to serve as a protective layer. After forming the protective layer by CVD, a protective layer may be formed by atomic layer deposition (ALD). The material of the protective layer formed by ALD is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, or the like. Silicon nitride may be further formed by CVD on the protective layer formed by ALD. The protective layer formed by ALD may have a thickness smaller than that of the protective layer formed by CVD. Specifically, the thickness of the protective layer formed by ALD may be 50% or less, or even 10% or less, of the protective layer formed by CVD.

[0129] Color filters A color filter may be provided on the protective layer. For example, a color filter taking into consideration the size of the organic light-emitting element may be provided on another substrate, and the substrate on which the color filter is formed may be bonded to the substrate on which the organic light-emitting element is provided. Alternatively, for example, a color filter may be patterned on the above-mentioned protective layer using photolithography technology. The color filter may be made of a polymer.

[0130] planarization layer A planarization layer may be disposed between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing the unevenness of the layers below the planarization layer. It may also be called a material resin layer without limiting the purpose. The planarization layer may be composed of an organic compound, and may be a low molecular weight or a high molecular weight. In consideration of reducing the unevenness, a high molecular weight organic compound may be used for the planarization layer.

[0131] The planarization layers may be provided above and below the color filter. In this case, the constituent materials of the planarization layers may be the same or different. Specific examples of the material for the planarization layer include polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0132] Microlenses The organic light-emitting device may have an optical component such as a microlens on its light-emitting side. The microlens may be made of acrylic resin, epoxy resin, or the like. The microlens may be intended to increase the amount of light extracted from the organic light-emitting device or to control the direction of the extracted light. The microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents to the hemisphere, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the hemisphere is the vertex of the microlens. The vertex of the microlens can be determined in the same way in any cross-sectional view. In other words, among the tangents to the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the semicircle is the vertex of the microlens.

[0133] It is also possible to define the midpoint of a microlens. In the cross section of the microlens, a line segment is imagined from the point where an arc shape ends to the point where another arc shape ends, and the midpoint of this line segment can be called the midpoint of the microlens. The cross section for determining the vertex and midpoint may be a cross section perpendicular to the insulating layer.

[0134] The microlens has a first surface having a convex portion and a second surface opposite the first surface. The second surface can be disposed closer to the functional layer (light-emitting layer) than the first surface. To achieve this configuration, it is necessary to form the microlens on the light-emitting device. If the functional layer is an organic layer, high-temperature processes can be avoided in the microlens manufacturing process. Furthermore, if the second surface is disposed closer to the functional layer than the first surface, the glass transition temperatures of the organic compounds constituting the organic layer may all be 100°C or higher, and are preferably, for example, 130°C or higher.

[0135] Counter substrate An opposing substrate may be disposed on the planarization layer. The opposing substrate is called an opposing substrate because it is provided at a position corresponding to the aforementioned substrate. The opposing substrate may be made of the same material as the aforementioned substrate. When the aforementioned substrate is defined as a first substrate, the opposing substrate may be a second substrate.

[0136] organic layer The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light-emitting element according to an embodiment of the present disclosure may be formed by the following method.

[0137] The organic compound layer constituting the organic light-emitting device according to the embodiment of the present disclosure can be formed by dry processes such as vacuum deposition, ionization deposition, sputtering, plasma, etc. Alternatively to the dry process, a wet process can be used in which the compound is dissolved in an appropriate solvent and a layer is formed by a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).

[0138] Here, when a layer is formed by a vacuum deposition method or a solution coating method, crystallization is unlikely to occur and the layer has excellent stability over time. When a film is formed by a coating method, the film can be formed by combining it with an appropriate binder resin.

[0139] Examples of the binder resin include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0140] These binder resins may be used singly or in combination as homopolymers or copolymers, and may further contain known additives such as plasticizers, antioxidants, and ultraviolet absorbers, as needed.

[0141] Pixel circuit The light-emitting device may have a pixel circuit connected to the light-emitting element. The pixel circuit may be an active matrix type that controls the emission of the first light-emitting element and the second light-emitting element independently. The active matrix type circuit may be voltage-programmed or current-programmed. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have a light-emitting element, a transistor that controls the emission brightness of the light-emitting element, a transistor that controls the emission timing, a capacitor that holds the gate voltage of the transistor that controls the emission brightness, and a transistor for connecting to GND without going through the light-emitting element.

[0142] The light-emitting device has a display region and a peripheral region arranged around the display region. The display region has pixel circuits, and the peripheral region has a display control circuit. The mobility of a transistor constituting the pixel circuit may be lower than the mobility of a transistor constituting the display control circuit.

[0143] The slope of the current-voltage characteristics of the transistors that make up the pixel circuit may be smaller than the slope of the current-voltage characteristics of the transistors that make up the display control circuit. The slope of the current-voltage characteristics can be measured using the so-called Vg-Ig characteristics.

[0144] The transistors that make up the pixel circuit are transistors connected to the light-emitting elements, such as the first light-emitting element.

[0145] pixel An organic light emitting device has a plurality of pixels, each of which has sub-pixels that emit different colors, for example, RGB colors.

[0146] A pixel has an area called a pixel aperture that emits light. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

[0147] The spacing between the subpixels may be 10 μm or less, and specifically may be 8 μm, 7.4 μm, or 6.4 μm.

[0148] The pixels may be arranged in a known manner in a plan view. For example, they may be in a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement. The shape of the subpixels in a plan view may be any known shape. For example, they may be rectangular, quadrilaterals such as diamonds, or hexagons. Of course, a shape that is close to a rectangle, rather than an exact shape, is included in the rectangle. The shape of the subpixels and the pixel arrangement may be used in combination.

[0149] Uses of the organic light-emitting device according to embodiments of the present disclosure The organic light-emitting device according to the embodiment of the present disclosure can be used as a component of a display device or a lighting device, and can also be used as an exposure light source for an electrophotographic image forming device, a backlight for a liquid crystal display device, or a light-emitting device having a white light source and a color filter.

[0150] The display device may be an image information processing device that has an image input unit that inputs image information from an area CCD, linear CCD, memory card, etc., has an information processing unit that processes the input information, and displays the input image on the display unit.

[0151] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of this touch panel function may be an infrared method, a capacitance method, a resistive film method, or an electromagnetic induction method, and is not particularly limited. The display device may also be used in the display unit of a multifunction printer.

[0152] Next, further explanation will be given with reference to the drawings. Fig. 17(a) shows an example of a pixel 400 arranged in a light-emitting device 500. The pixel has sub-pixels 810 (pixels 400). The sub-pixels are divided into 810R, 810G, and 810B based on their light emission. The emitted colors may be distinguished by the wavelength of light emitted from the light-emitting layer, or the light emitted from the sub-pixels may be selectively transmitted or color-converted using a color filter or the like. Each sub-pixel has a reflective electrode 802 as a first electrode on an interlayer insulating layer 801, an insulating layer 803 covering the edge of the reflective electrode 802, an organic compound layer 804 covering the first electrode and the insulating layer, a transparent electrode 805 as a second electrode, a protective layer 806, and a color filter 807.

[0153] A transistor and a capacitor may be disposed below or inside the interlayer insulating layer 801. The transistor and the first electrode may be electrically connected via a contact hole (not shown) or the like.

[0154] The insulating layer 803 may also be called a bank or a pixel separation film. The insulating layer 803 covers the edges of the first electrodes and is disposed to surround the first electrodes. The portions of the first electrodes not covered by the insulating layer 803 come into contact with the organic compound layer 804 and become light-emitting regions.

[0155] The organic compound layer 804 includes a hole injection layer 841 , a hole transport layer 842 , a first light-emitting layer 843 , a second light-emitting layer 844 , and an electron transport layer 845 .

[0156] The second electrode may be a transparent electrode, a reflective electrode, or a semi-transparent electrode.

[0157] The protective layer 806 reduces the penetration of moisture into the organic compound layer. Although the protective layer is illustrated as a single layer, it may be a multi-layer structure. Each layer may be an inorganic compound layer and an organic compound layer.

[0158] The color filters 807 are divided into 807R, 807G, and 807B depending on their colors. The color filters may be formed on a planarization film (not shown). A resin protective layer (not shown) may be disposed on the color filters. The color filters may be formed on a protective layer 806. The color filters may be provided on an opposing substrate such as a glass substrate and then bonded thereto.

[0159] A display device 800 in FIG. 17(b) (corresponding to the light-emitting device 500 described above) includes an organic light-emitting element 826 and a TFT 818 as an example of a transistor. A substrate 811 made of glass, silicon, or the like is provided with an insulating layer 812 on top of it. An active element such as the TFT 818 is disposed on the insulating layer, and a gate electrode 813, a gate insulating film 814, and a semiconductor layer 815 of the active element are disposed on top of the insulating layer. The TFT 818 also includes the semiconductor layer 815, a drain electrode 816, and a source electrode 817. An insulating film 819 is provided on top of the TFT 818. An anode 821 constituting the organic light-emitting element 826 and the source electrode 817 are connected via a contact hole 820 provided in the insulating film.

[0160] The electrical connection between the electrodes (anode, cathode) included in the organic light-emitting element 826 and the electrodes (source electrode, drain electrode) included in the TFT is not limited to the embodiment shown in Figure 17(b). In other words, it is sufficient that either the anode or the cathode is electrically connected to either the TFT source electrode or the drain electrode. TFT stands for thin film transistor.

[0161] 17(b), the organic compound layer is illustrated as a single layer, but the organic compound layer 822 may be a multi-layer structure. A first protective layer 824 and a second protective layer 825 are provided on the cathode 823 to reduce deterioration of the organic light-emitting element.

[0162] In the display device 800 of FIG. 17(b), transistors are used as switching elements, but other switching elements may be used instead.

[0163] Furthermore, the transistors used in the display device 800 of Fig. 17(b) are not limited to transistors using single-crystal silicon wafers, but may also be thin-film transistors having an active layer on the insulating surface of a substrate. Examples of active layers include non-single-crystal silicon such as single-crystal silicon, amorphous silicon, and microcrystalline silicon, and non-single-crystal oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Thin-film transistors are also called TFT elements.

[0164] The transistors included in the display device 800 of Figure 17(b) may be formed within a substrate such as a silicon substrate. Here, "formed within a substrate" means that the substrate itself, such as a silicon substrate, is processed to form the transistors. In other words, having a transistor within a substrate can be seen as the substrate and the transistor being formed integrally.

[0165] The organic light-emitting element according to this embodiment has its light emission brightness controlled by a TFT, which is an example of a switching element. By providing multiple organic light-emitting elements on a surface, an image can be displayed based on the respective light emission brightnesses. Here, the switching element according to this embodiment is not limited to a TFT, but may also be a transistor formed from low-temperature polysilicon or an active matrix driver formed on a substrate such as a silicon substrate. "On the substrate" can also be referred to as "inside the substrate." Whether to provide a transistor in the substrate or to use a TFT is determined by the size of the display unit. For example, if the size is about 0.5 inches, the organic light-emitting element may be provided on a silicon substrate.

[0166] FIG. 18 is a schematic diagram illustrating an example of a display device using a light-emitting device 500 according to this embodiment. The display device 1000 may include a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. Flexible printed circuits (FPCs) 1002 and 1004 are connected to the touch panel 1003 and the display panel 1005. A control circuit including a logic circuit formed of transistors and the like is disposed on the circuit board 1007. The battery 1008 may not be disposed if the display device 1000 is not a portable device, and even if it is a portable device, it does not need to be disposed in this position. The light-emitting device 500 can be applied to the display panel 1005. The pixels 400 disposed in the light-emitting device 500 functioning as the display panel 1005 are connected to and operate with the control circuit disposed on the circuit board 1007.

[0167] The display device 1000 shown in FIG. 18 may be used as a display unit of a photoelectric conversion device (which may also be called an imaging device) that has an optical unit with multiple lenses and an imaging element that receives light that has passed through the optical unit and photoelectrically converts it into an electrical signal. The photoelectric conversion device may have a display unit that displays information acquired by the imaging element. The display unit may be a display unit exposed to the outside of the photoelectric conversion device or a display unit located within a viewfinder. The photoelectric conversion device may be a digital camera or a digital video camera.

[0168] FIG. 19 is a schematic diagram illustrating an example of a photoelectric conversion device using the light-emitting device 500 of this embodiment. The photoelectric conversion device 1100 may include a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The photoelectric conversion device 1100 may also be called an imaging device. The light-emitting device 500 of this embodiment can be applied to the viewfinder 1101 or the rear display 1102, which are display units. In this case, the light-emitting device 500 may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the moving speed of the subject, the possibility that the subject will be blocked by an obstruction, and the like.

[0169] Since the timing suitable for capturing an image is often very short, it is better to display information as soon as possible. Therefore, a light emitting device 500 in which pixels 400 including light emitting elements using an organic light emitting material such as an organic EL element are arranged may be used in a viewfinder 1101 or a rear display 1102. This is because organic light emitting materials have a fast response speed. A light emitting device 500 using an organic light emitting material is more suitable than a liquid crystal display device for these devices, which require a high display speed.

[0170] The photoelectric conversion device 1100 has an optical section (not shown). The optical section has multiple lenses, which form an image on a photoelectric conversion element (not shown) housed in a housing 1104 that receives light that has passed through the optical section. The focus of the multiple lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically.

[0171] The light emitting device 500 may be applied to a display unit of an electronic device. In this case, the light emitting device 500 may have both a display function and an operation function. Examples of the portable terminal include a mobile phone such as a smartphone, a tablet, and a head-mounted display.

[0172] FIG. 20 is a schematic diagram showing an example of an electronic device using the light-emitting device 500 of this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit 1202 may be a biometric recognition unit that recognizes a fingerprint to perform unlocking or the like. A portable device having a communication unit can also be called a communication device. The light-emitting device 500 of this embodiment can be applied to the display unit 1201.

[0173] 21(a) and 21(b) are schematic diagrams illustrating an example of a display device using the light-emitting device 500 of this embodiment. FIG. 21(a) illustrates a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The light-emitting device 500 of this embodiment can be applied to the display unit 1302. The display device 1300 may have a base 1303 that supports the frame 1301 and the display unit 1302. The base 1303 is not limited to the form shown in FIG. 21(a). For example, the bottom edge of the frame 1301 may also serve as the base 1303. The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0174] FIG. 21(b) is a schematic diagram illustrating another example of a display device using the light-emitting device 500 of this embodiment. The display device 1310 of FIG. 21(b) is configured to be bendable and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The light-emitting device 500 of this embodiment can be applied to the first display unit 1311 and the second display unit 1312. The first display unit 1311 and the second display unit 1312 may be a single display unit without any joints. The first display unit 1311 and the second display unit 1312 can be separated by the bending point. The first display unit 1311 and the second display unit 1312 may display different images, or the first display unit and the second display unit 1312 may display a single image.

[0175] FIG. 22 is a schematic diagram illustrating an example of a lighting device using the light-emitting device 500 of this embodiment. The lighting device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. The light-emitting device 500 of this embodiment can be applied to the light source 1402. The optical film 1404 may be a filter that improves the color rendering of the light source. The light diffusion unit 1405 can effectively diffuse light from the light source, such as for lighting, and deliver the light over a wide area. If necessary, a cover may be provided on the outermost part. The lighting device 1400 may include both the optical film 1404 and the light diffusion unit 1405, or only one of them.

[0176] The lighting device 1400 is, for example, a device that illuminates a room. The lighting device 1400 may emit white, daylight white, or any other color from blue to red. It may have a dimming circuit that adjusts the light intensity. The lighting device 1400 may have a power supply circuit connected to the light-emitting device 500 that functions as the light source 1402. The power supply circuit is a circuit that converts AC voltage into DC voltage. White has a color temperature of 4200K, and daylight white has a color temperature of 5000K. The lighting device 1400 may also have a color filter. The lighting device 1400 may also have a heat sink. The heat sink dissipates heat from within the device to the outside, and examples of the heat sink include metal with a high specific heat, liquid silicon, etc.

[0177] FIG. 23 is a schematic diagram of an automobile having a tail lamp, which is an example of a vehicle lamp using the light emitting device 500 of this embodiment. The automobile 1500 may have a tail lamp 1501, and may be configured to turn on the tail lamp 1501 when braking or the like is performed. The light emitting device 500 of this embodiment may be used as a headlamp as a vehicle lamp. An automobile is an example of a mobile body, and the mobile body may be a ship, a drone, an aircraft, a railroad vehicle, an industrial robot, or the like. The mobile body may have a body and a lamp provided thereon. The lamp may indicate the current location of the body.

[0178] The light emitting device 500 of this embodiment can be applied to a tail lamp 1501. The tail lamp 1501 may have a protective member that protects the light emitting device 500 functioning as the tail lamp 1501. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, but may be made of polycarbonate or the like. The protective member may also be made by mixing a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like with polycarbonate.

[0179] The automobile 1500 may have a body 1503 and a window 1502 attached thereto. The window may be a window for checking the front and rear of the automobile, or may be a transparent display such as a head-up display. The light-emitting device 500 of this embodiment may be used in the transparent display. In this case, the constituent materials of the electrodes and the like of the light-emitting device 500 are made of transparent materials.

[0180] 24(a) and 24(b), a further application example of the light emitting device 500 of this embodiment will be described. The light emitting device 500 can be applied to systems that can be worn as a wearable device, such as smart glasses, a head-mounted display (HMD), or smart contact lenses. An image capturing and displaying device used in such an application example has an image capturing device capable of photoelectrically converting visible light and a light emitting device capable of emitting visible light.

[0181] 24(a) illustrates glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front side of a lens 1601 of the glasses 1600. Furthermore, a light-emitting device 500 according to this embodiment is provided on the back side of the lens 1601.

[0182] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the light emitting device 500 according to each embodiment. The control device 1603 also controls the operations of the image capture device 1602 and the light emitting device 500. The lens 1601 is formed with an optical system for focusing light onto the image capture device 1602.

[0183] FIG. 24(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 include a control device 1612, which is equipped with an imaging device corresponding to the imaging device 1602 and a light-emitting device 500. A lens 1611 includes an optical system for projecting light emitted from the imaging device in the control device 1612 and the light-emitting device 500, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the imaging device and the light-emitting device 500 and controls the operation of the imaging device and the light-emitting device 500. The control device 1612 may also include a gaze detection unit that detects the gaze of the wearer. Infrared light may be used for gaze detection. The infrared light-emitting unit emits infrared light toward the eyeball of a user gazing at a displayed image. An imaging unit having a light-receiving element detects the emitted infrared light reflected from the eyeball, thereby obtaining an image of the eyeball. By providing a reduction means for reducing the amount of light from the infrared light emitting section to the display section in a plan view, degradation of image quality is reduced.

[0184] The gaze of the user relative to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be used for gaze detection using the image of the eyeball. As an example, a gaze detection method based on the Purkinje image formed by reflection of irradiated light on the cornea can be used.

[0185] More specifically, gaze detection processing is performed based on the pupil-corneal reflex method, which calculates a gaze vector representing the direction (rotation angle) of the eyeball based on the pupil image and Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0186] The light emitting device 500 according to the embodiment of the present disclosure may have an imaging device having a light receiving element, and may control the display image based on user line of sight information from the imaging device.

[0187] Specifically, the light emitting device 500 determines a first field of view area where the user gazes and a second field of view area other than the first field of view area based on the line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the light emitting device 500, or may be determined by an external control device and received. In the display area of ​​the light emitting device 500, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0188] The display area includes a first display area and a second display area different from the first display area, and a high-priority area is determined from the first display area and the second display area based on line-of-sight information. The first display area and the second display area may be determined by a control device of the light-emitting device 500, or may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of areas other than the high-priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0189] Note that AI may be used to determine the first field of view area and areas with high priority. The AI ​​may be a model configured to estimate the angle of gaze and the distance to an object in the line of sight from the image of the eyeball, using as training data an image of the eyeball and the actual direction in which the eyeball in the image was looking. The AI ​​program may be included in the light-emitting device 500, the imaging device, or an external device. If included in an external device, it is transmitted to the light-emitting device 500 via communication.

[0190] When display control is performed based on visual recognition detection, the smart glasses can be applied to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured outside information in real time.

[0191] The disclosure of this specification includes the following light-emitting devices, display devices, photoelectric conversion devices, electronic devices, lighting devices, mobile objects, wearable devices, and methods for manufacturing light-emitting devices.

[0192] (Item 1) A light emitting device having a plurality of pixels, Each of the plurality of pixels includes a first electrode disposed on a substrate, a second electrode disposed between the first electrode and the substrate, an organic functional layer including an emitting layer disposed between the first electrode and the second electrode, and a reflective layer disposed between the second electrode and the substrate; the reflective layer has a first surface on the second electrode side and a second surface on the substrate side; A light emitting device, wherein the unevenness of the first surface is smaller than the unevenness of the second surface.

[0193] (Item 2) 2. The light emitting device according to item 1, further comprising a conductive layer in contact with the second surface and disposed between the substrate and the reflective layer.

[0194] (Item 3) 3. The light-emitting device according to item 1 or 2, wherein the reflective layer and the second electrode are electrically connected.

[0195] (Item 4) each of the plurality of pixels further includes a structure disposed between the reflective layer and the substrate, the structure including a wiring pattern disposed in an insulator, and a transistor disposed on the substrate; 4. The light emitting device according to any one of items 1 to 3, wherein the reflective layer is electrically connected to the transistor via the wiring pattern.

[0196] (Item 5) each of the plurality of pixels further includes a structure disposed between the reflective layer and the substrate, the structure including a wiring pattern disposed in an insulator, a transistor disposed on the substrate, and a conductive pattern disposed on a side of the insulator opposite the substrate and electrically connected to the second electrode; the reflective layer and the conductive pattern are in contact with the insulator, 3. The light emitting device according to item 1 or 2, wherein the conductive pattern is electrically connected to the transistor via the wiring pattern.

[0197] (Item 6) 6. The light emitting device according to item 5, wherein the reflective layer and the conductive pattern contain the same material.

[0198] (Item 7) Each of the plurality of pixels further includes an insulating layer disposed between the second electrode and the reflective layer, the plurality of pixels includes a first pixel and a second pixel; 7. The light emitting device according to any one of items 1 to 6, wherein the thickness of the insulating layer is different between the first pixel and the second pixel.

[0199] (Item 8) 8. The light-emitting device according to item 7, wherein the distance between the reflective layer and the substrate in the first pixel and the distance between the reflective layer and the substrate in the second pixel are different from each other.

[0200] (Item 9) Item 8. The light-emitting device of item 7, wherein the difference between the distance between the reflective layer and the substrate in the first pixel and the distance between the reflective layer and the substrate in the second pixel is smaller than the difference between the thickness of the insulating layer in the first pixel and the thickness of the insulating layer in the second pixel.

[0201] (Item 10) the plurality of pixels further includes a third pixel; 10. The light emitting device according to any one of items 7 to 9, wherein the thickness of the insulating layer in the third pixel is different from the thickness of the insulating layer in the first pixel and the second pixel.

[0202] (Item 11) 11. The light emitting device according to any one of items 1 to 10, wherein the reflective layer contains aluminum.

[0203] (Item 12) 12. A display device comprising: a light-emitting device according to any one of items 1 to 11; and a control circuit connected to the light-emitting device.

[0204] (Item 13) an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image; 12. A photoelectric conversion device, wherein the display unit displays an image captured by the imaging element, and the photoelectric conversion device comprises the light-emitting device according to any one of items 1 to 11.

[0205] (Item 14) A display unit is provided in the housing, and a communication unit is provided in the housing and communicates with an external device. 12. An electronic device, wherein the display unit comprises the light-emitting device according to any one of items 1 to 11.

[0206] (Item 15) A lighting device having a light source and at least one of a light diffusion unit and an optical film, 12. An illumination device, wherein the light source comprises the light emitting device according to any one of items 1 to 11.

[0207] (Item 16) A moving body having a body and a lighting fixture provided on the body, 12. A moving body, wherein the lighting fixture comprises the light emitting device according to any one of items 1 to 11.

[0208] (Item 17) 1. A wearable device having a display device for displaying an image, 12. A wearable device, wherein the display device comprises the light-emitting device according to any one of items 1 to 11.

[0209] (Item 18) A method for manufacturing a light-emitting device having a plurality of pixels, comprising: providing a substrate having a structure in which a wiring pattern is disposed within an insulator; forming a first insulating layer on a support substrate; forming a reflective layer on the first insulating layer; forming a second insulating layer and a bonding layer having a bonding pattern on the first insulating layer and the reflective layer; a bonding step of bonding the structure and the bonding layer; an exposing step of at least partially removing the support substrate to expose the first insulating layer after the bonding step; forming a first electrode, an organic functional layer, and a second electrode on the first insulating layer exposed by the exposing step; A manufacturing method comprising:

[0210] (Item 19) the plurality of pixels include a first pixel and a second pixel, The step of forming the first insulating layer includes: forming a material layer of the first insulating layer on the support substrate; etching the material layer so that a portion of the material layer that constitutes the first pixel and a portion of the material layer that constitutes the second pixel have different thicknesses; Item 19. The method for producing a semiconductor device according to Item 18, comprising:

[0211] (Item 20) the plurality of pixels include a first pixel and a second pixel, the method further includes, before the step of forming the first insulating layer, forming a structural layer on the support substrate, the structural layer having different film thicknesses in a portion corresponding to the first pixel and a portion corresponding to the second pixel; the first insulating layer is formed on the structural layer; Item 19. The manufacturing method according to item 18, wherein the exposing step includes a step of at least partially removing the support substrate and the structural layer to expose the first insulating layer.

[0212] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0213] 100: substrate, 210: reflective layer, 211, 212: surface, 302: organic functional layer, 310, 311: electrodes, 400: pixel, 500: light-emitting device

Claims

1. A light emitting device having a plurality of pixels, Each of the plurality of pixels includes a first electrode disposed on a substrate, a second electrode disposed between the first electrode and the substrate, an organic functional layer including an emitting layer disposed between the first electrode and the second electrode, and a reflective layer disposed between the second electrode and the substrate, the reflective layer has a first surface on the second electrode side and a second surface on the substrate side; A light emitting device, wherein the unevenness of the first surface is smaller than the unevenness of the second surface.

2. The light emitting device according to claim 1 , further comprising a conductive layer in contact with the second surface and disposed between the substrate and the reflective layer.

3. The light-emitting device according to claim 1 , wherein the reflective layer and the second electrode are electrically connected to each other.

4. each of the plurality of pixels further includes a structure disposed between the reflective layer and the substrate, the structure including a wiring pattern disposed in an insulator, and a transistor disposed on the substrate; 2. The light emitting device according to claim 1, wherein the reflective layer is electrically connected to the transistor via the wiring pattern.

5. each of the plurality of pixels further includes a structure disposed between the reflective layer and the substrate, the structure including a wiring pattern disposed in an insulator, a transistor disposed on the substrate, and a conductive pattern disposed on a side of the insulator opposite the substrate and electrically connected to the second electrode; the reflective layer and the conductive pattern are in contact with the insulator, 2. The light emitting device according to claim 1, wherein the conductive pattern is electrically connected to the transistor via the wiring pattern.

6. The light emitting device according to claim 5 , wherein the reflective layer and the conductive pattern contain the same material.

7. Each of the plurality of pixels further includes an insulating layer disposed between the second electrode and the reflective layer, the plurality of pixels includes a first pixel and a second pixel; 2. The light emitting device according to claim 1, wherein the thickness of the insulating layer is different between the first pixel and the second pixel.

8. 8. The light-emitting device according to claim 7, wherein a distance between the reflective layer and the substrate in the first pixel and a distance between the reflective layer and the substrate in the second pixel are different from each other.

9. 8. The light-emitting device according to claim 7, wherein the difference between the distance between the reflective layer and the substrate in the first pixel and the distance between the reflective layer and the substrate in the second pixel is smaller than the difference between the thickness of the insulating layer in the first pixel and the thickness of the insulating layer in the second pixel.

10. the plurality of pixels further includes a third pixel; 8. The light emitting device according to claim 7, wherein the thickness of the insulating layer in the third pixel is different from the thickness of the insulating layer in the first pixel and the second pixel.

11. 2. The light emitting device of claim 1, wherein the reflective layer comprises aluminum.

12. A display device comprising: a light-emitting device according to claim 1; and a control circuit connected to the light-emitting device.

13. an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image; A photoelectric conversion device, wherein the display section displays an image captured by the imaging element, and the photoelectric conversion device comprises the light-emitting device according to claim 1 .

14. A display unit is provided in the housing, and a communication unit is provided in the housing and communicates with an external device.

12. An electronic device, wherein the display unit comprises the light-emitting device according to claim 1.

15. A lighting device having a light source and at least one of a light diffusion unit and an optical film, 12. An illumination device, wherein the light source comprises a light emitting device according to claim 1.

16. A moving body having a body and a lighting fixture provided on the body, A moving body, wherein the lighting fixture comprises the light emitting device according to any one of claims 1 to 11.

17. 1. A wearable device having a display device for displaying an image, A wearable device, wherein the display device comprises the light-emitting device according to claim 1 .

18. A method for manufacturing a light-emitting device having a plurality of pixels, comprising: providing a substrate having a structure in which a wiring pattern is disposed within an insulator; forming a first insulating layer on a support substrate; forming a reflective layer on the first insulating layer; forming a second insulating layer and a bonding layer having a bonding pattern on the first insulating layer and the reflective layer; a bonding step of bonding the structure and the bonding layer; an exposing step of at least partially removing the support substrate to expose the first insulating layer after the bonding step; forming a first electrode, an organic functional layer, and a second electrode on the first insulating layer exposed by the exposing step; A manufacturing method comprising:

19. the plurality of pixels include a first pixel and a second pixel, The step of forming the first insulating layer includes: forming a material layer of the first insulating layer on the support substrate; etching the material layer so that a portion of the material layer that constitutes the first pixel and a portion of the material layer that constitutes the second pixel have different thicknesses; 20. The method of claim 18, comprising:

20. the plurality of pixels include a first pixel and a second pixel, the method further includes, before the step of forming the first insulating layer, forming a structural layer on the support substrate, the structural layer having different film thicknesses in a portion corresponding to the first pixel and a portion corresponding to the second pixel; the first insulating layer is formed on the structural layer; 20. The method of claim 18, wherein the exposing step includes the step of at least partially removing the support substrate and the structural layer to expose the first insulating layer.

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