Light-emitting device and display device

Abstract

To provide a light-emitting device with excellent characteristics.SOLUTION: A light-emitting device is formed on a first insulating layer and includes a first electrode, a second electrode, and an organic compound layer. The first electrode is formed in contact with the first insulating layer. The organic compound layer exists between the first electrode and the second electrode. The second electrode and the organic compound layer are separated from at least one of a plurality of other light-emitting devices adjacent to the light-emitting device. When viewed from a direction substantially perpendicular to a surface of the first insulating layer where the first electrode is formed, the outline of the second electrode and the outline of the organic compound layer substantially coincide with each other. The organic compound layer includes a light-emitting layer and an electron injection layer. The electron injection layer includes a mixed layer including metal, a first organic compound, and a second organic compound. The first organic compound includes a phenanthroline ring with an electron donating group. The second organic compound includes a π electron deficient heteroaromatic ring.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a light-emitting device and a display device.

[0002] One embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, an input device (for example, a touch sensor), an input / output device (for example, a touch panel), a driving method thereof, or a manufacturing method thereof. [Background technology]

[0003] Display devices have been developed for a variety of applications in recent years. For example, applications of large display devices include home television devices (also called televisions or television receivers), digital signage, and public information displays (PIDs), while applications of small display devices include smartphones and tablet terminals equipped with touch panels.

[0004] At the same time, there is also a demand for higher resolution display devices. Devices requiring high-resolution display devices include, for example, devices for virtual reality (VR), augmented reality (AR), substitutional reality (SR), and mixed reality (MR).

[0005] As display elements for use in display devices, the development of light-emitting devices (also referred to as light-emitting elements) has been actively promoted. Light-emitting devices (also referred to as EL devices or EL elements) utilizing the electroluminescence (hereinafter referred to as EL) phenomenon, particularly organic EL devices that mainly use organic compounds, are suitable for display devices because they have features such as being easily thin and lightweight, being capable of high-speed response to input signals, and being capable of being driven by a DC constant voltage power supply.

[0006] In order to obtain higher-definition display devices using organic EL devices, research is being conducted into patterning organic layers by photolithography using photoresist, etc., instead of deposition methods using metal masks. By using photolithography, it is possible to obtain high-definition display devices with organic compound layers spaced apart by several micrometers (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Special Publication No. 2018-521459 Summary of the Invention [Problem to be solved by the invention]

[0008] It has long been known that exposure to atmospheric components such as water and oxygen can affect the initial characteristics and reliability of the cathode and organic compound layers of organic EL devices, and so it has been common practice to handle them in an inert gas atmosphere or a near-vacuum. In particular, alkali metals, alkaline earth metals, or their compounds are often used for the electron injection layer. These metals and compounds are highly reactive with water and oxygen, and when the surface of an organic compound layer, including the electron injection layer, is exposed to the atmosphere, it quickly deteriorates and ceases to function as an electron injection layer.

[0009] However, as described above, in the process of processing by photolithography, it is necessary to expose the organic EL device to the atmosphere.

[0010] An object of one aspect of the present invention is to provide a novel light-emitting device. Alternatively, an object of another aspect of the present invention is to provide a light-emitting device having good efficiency. Alternatively, an object of one aspect of the present invention is to provide a light-emitting device having good reliability. Alternatively, an object of another aspect of the present invention is to provide a light-emitting device having good efficiency and reliability.

[0011] Alternatively, one embodiment of the present invention has an object to provide a novel light-emitting device manufactured through a photolithography process. Alternatively, another embodiment of the present invention has an object to provide a light-emitting device manufactured through a photolithography process and having good efficiency. Alternatively, one embodiment of the present invention has an object to provide a light-emitting device manufactured through a photolithography process and having good reliability. Alternatively, another embodiment of the present invention has an object to provide a light-emitting device manufactured through a photolithography process and having good luminous efficiency and reliability.

[0012] Another object of one embodiment of the present invention is to provide a novel light-emitting device that can be used in a high-resolution display device. Another object of another embodiment of the present invention is to provide a light-emitting device that can be used in a high-resolution display device and has good efficiency. Another object of one embodiment of the present invention is to provide a light-emitting device that can be used in a high-resolution display device and has good reliability. Another object of another embodiment of the present invention is to provide a light-emitting device that can be used in a high-resolution display device and has good emission efficiency and reliability.

[0013] Another object of another embodiment of the present invention is to provide a highly reliable display device.Another object of another embodiment of the present invention is to provide a high-definition display device.Another object of another embodiment of the present invention is to provide a high-definition and highly reliable display device.

[0014] Note that the description of these problems does not preclude the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Problems other than these can be extracted from the description in the specification, drawings, and claims. [Means for solving the problem]

[0015] One embodiment of the present invention is a light-emitting device including a first electrode, a second electrode, and an organic compound layer. The organic compound layer includes a light-emitting layer and an electron-injection layer. The electron-injection layer includes a metal, a first organic compound, and a second organic compound. The first organic compound has a phenanthroline ring having an electron-donating group. The second organic compound has a π-electron-deficient heteroaromatic ring. The first organic compound and the metal interact with each other to form a donor level and function as an electron donor for the second organic compound.

[0016] One embodiment of the present invention is a light-emitting device including a first electrode, a second electrode, and an organic compound layer. The organic compound layer includes a light-emitting layer and an electron-injection layer. The electron-injection layer includes a metal, a first organic compound, and a second organic compound. The first organic compound includes a phenanthroline ring having an electron-donating group, and the second organic compound includes a π-electron-deficient heteroaromatic ring. The LUMO level of the second organic compound is lower than that of the first organic compound.

[0017] One embodiment of the present invention is a light-emitting device formed on a first insulating layer, the light-emitting device having a first electrode, a second electrode, and an organic compound layer, the first electrode being formed in contact with the first insulating layer, the organic compound layer being located between the first electrode and the second electrode, the second electrode and the organic compound layer being separated from at least one of a plurality of other light-emitting devices adjacent to the light-emitting device, when viewed from a direction substantially perpendicular to a surface of the first insulating layer on which the first electrode is formed, the contour of the second electrode and the contour of the organic compound layer substantially coincide with each other, the organic compound layer having a light-emitting layer and an electron-injection layer, the electron-injection layer having a mixed layer containing a metal, a first organic compound, and a second organic compound, the first organic compound having a phenanthroline ring having an electron-donating group, and the second organic compound having a π-electron-deficient heteroaromatic ring.

[0018] Another embodiment of the present invention is a light-emitting device formed over a first insulating layer, the light-emitting device including a first electrode, a second electrode, and an organic compound layer, the first electrode being formed in contact with the first insulating layer, the organic compound layer being located between the first electrode and the second electrode, the second electrode and the organic compound layer being separated from at least one of a plurality of other light-emitting devices adjacent to the light-emitting device, an outline of the second electrode and an outline of the organic compound layer being approximately the same when viewed from a direction approximately perpendicular to a surface of the first insulating layer on which the first electrode is formed, the organic compound layer having a light-emitting layer and an electron injection layer, the electron injection layer having a mixed layer containing a metal, a first organic compound, and a second organic compound, the first organic compound having a phenanthroline ring, and a minimum value of electrostatic potential of the first organic compound being a threshold of an electron density distribution of 0.0004 e / a0 3 At -0.085E h The second organic compound has a π-electron deficient heteroaromatic ring, and the light-emitting device is:

[0019] Another embodiment of the present invention is a light-emitting device having any of the above structures, in which the phenanthroline ring of the first organic compound has an electron-donating group.

[0020] Another embodiment of the present invention is a light-emitting device in which, in each of the above structures, the phenanthroline ring is a 1,10-phenanthroline ring and has an electron-donating group at at least one of the 4-position and the 7-position.

[0021] Another aspect of the present invention is a light-emitting device having any of the above structures, wherein the electron-donating group is at least one of an alkyl group, an alkoxy group, an aryloxy group, an alkylamino group, an arylamino group, and a heterocyclic amino group.

[0022] Another embodiment of the present invention is a light-emitting device having any of the above structures, wherein the first organic compound has an acid dissociation constant pKa of 8 or more.

[0023] In one embodiment of the present invention, in each of the above structures, the electron injection layer has a spin density of 5×10 as measured by electron spin resonance. 16 spins / cm 3 That is all for the light emitting device.

[0024] In addition, in each of the above-described structures, one embodiment of the present invention is such that the mixed film containing the metal and the first organic compound has a spin density of 2×10 as measured by electron spin resonance. 16 spins / cm 3 The mixed film containing the metal and the second organic compound has a spin density of 2×10 or less as measured by electron spin resonance. 16 spins / cm 3 The light emitting device is:

[0025] Another embodiment of the present invention is a light-emitting device having any of the above structures, in which the second organic compound has a phenanthroline ring.

[0026] Another embodiment of the present invention is a light-emitting device having any of the above structures, wherein the second organic compound has a glass transition temperature of 100° C. or higher.

[0027] Another embodiment of the present invention is a light-emitting device having any of the above structures, in which the LUMO level of the second organic compound is lower than the LUMO level of the first organic compound.

[0028] Another embodiment of the present invention is a light-emitting device having any of the above structures, in which the second organic compound has an electron-transport property.

[0029] Another embodiment of the present invention is a light-emitting device having any of the above structures, in which the second organic compound has an acid dissociation constant pKa of 4 or more and less than 8.

[0030] Another embodiment of the present invention is a light-emitting device having any of the above structures, in which the second organic compound has a LUMO level of −3.0 eV or higher and −2.0 eV or lower.

[0031] Another embodiment of the present invention is a light-emitting device in which, in each of the above structures, the metal belongs to Group 1, Group 3, Group 11, or Group 13 in the periodic table.

[0032] Another embodiment of the present invention is a light-emitting device having any of the above structures, in which the metal is a typical metal.

[0033] Another embodiment of the present invention is a light-emitting device having any of the above structures, in which the metal is a transition metal.

[0034] Another embodiment of the present invention is a light-emitting device in which, in each of the above structures, the organic compound layer has a P-type layer between the electron-injection layer and the second electrode, the P-type layer has a third organic compound and a fourth organic compound or a metal oxide, the third organic compound has a hole-transporting property, and the fourth organic compound has at least one of a halogen group and a cyano group.

[0035] Alternatively, another embodiment of the present invention is a light-emitting device having a plurality of light-emitting devices, each of which is any one of the light-emitting devices described above, and each of the plurality of light-emitting devices has an organic compound layer including a light-emitting layer and an electron-injection layer between a first electrode and a second electrode, and the second electrode and the organic compound layer included in each of the plurality of light-emitting devices are independent from each other among the plurality of light-emitting devices.

[0036] Another embodiment of the present invention is a display device including the light-emitting device having any of the above structures and a transistor or a substrate.

[0037] Another embodiment of the present invention is a display module including the above-described light-emitting device and at least one of a connector and an integrated circuit.

[0038] Another embodiment of the present invention is an electronic device including the above-described light-emitting device and at least one of a housing, a battery, a camera, a speaker, and a microphone. [Effects of the Invention]

[0039] According to one embodiment of the present invention, a novel light-emitting device can be provided. According to another embodiment of the present invention, a light-emitting device having high efficiency can be provided. According to another embodiment of the present invention, a light-emitting device having high reliability can be provided. According to another embodiment of the present invention, a light-emitting device having high efficiency and reliability can be provided.

[0040] According to one embodiment of the present invention, a novel light-emitting device manufactured through a photolithography process can be provided. According to another embodiment of the present invention, a light-emitting device manufactured through a photolithography process and having high efficiency can be provided. According to one embodiment of the present invention, a light-emitting device manufactured through a photolithography process and having high reliability can be provided. According to another embodiment of the present invention, a light-emitting device manufactured through a photolithography process and having high emission efficiency and reliability can be provided.

[0041] According to one embodiment of the present invention, a novel light-emitting device that can be used in a high-resolution display device can be provided. According to another embodiment of the present invention, a light-emitting device that can be used in a high-resolution display device and has high emission efficiency can be provided. According to one embodiment of the present invention, a light-emitting device that can be used in a high-resolution display device and has high emission efficiency and reliability can be provided. According to another embodiment of the present invention, a light-emitting device that can be used in a high-resolution display device and has high emission efficiency and reliability can be provided.

[0042] According to another embodiment of the present invention, a highly reliable display device can be provided. According to another embodiment of the present invention, a high-definition display device can be provided. According to another embodiment of the present invention, a high-definition and highly reliable display device can be provided.

[0043] Alternatively, a novel organic compound, a novel light-emitting device, a novel display device, a novel display module, and a novel electronic device can be provided.

[0044] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims. [Brief explanation of the drawings]

[0045] [Figure 1] 1A to 1C are diagrams showing a light-emitting device. [Figure 2] 2(A) to 2(C) show the analysis results of the spin density distribution in the ground state of the composite material. [Figure 3] 3(A) and 3(B) show the results of electrostatic potential map analysis of an organic compound in the ground state. [Figure 4] 4(A) to 4(C) show the results of electrostatic potential map analysis of the composite material in the ground state. [Figure 5] 5(A) and 5(B) are diagrams showing a light-emitting device. [Figure 6] 6A and 6B are a top view and a cross-sectional view of the display device. [Figure 7] 7A to 7G are diagrams showing examples of pixel layouts. [Figure 8] 8A to 8E are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 9] 9A and 9B are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 10] 10A to 10D are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 11] 11A to 11C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 12] 12A to 12C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 13] 13A and 13B are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 14] 14(A) and 14(B) are perspective views showing configuration examples of a display module. [Figure 15] 15(A) and 15(B) are cross-sectional views showing examples of the configuration of a display device. [Figure 16]FIG. 16 is a perspective view showing an example of the configuration of a display device. [Figure 17] FIG. 17 is a cross-sectional view showing an example of the configuration of a display device. [Figure 18] FIG. 18 is a cross-sectional view showing an example of the configuration of a display device. [Figure 19] 19A to 19C are cross-sectional views and top views showing a structural example of a display device. [Figure 20] FIG. 20 is a cross-sectional view showing an example of the configuration of a display device. [Figure 21] 21A to 21C are cross-sectional views and top views showing a structural example of a display device. [Figure 22] 22A to 22D are diagrams showing examples of electronic devices. [Figure 23] 23A to 23F are diagrams showing examples of electronic devices. [Figure 24] 24A to 24G are diagrams showing examples of electronic devices. [Figure 25] FIG. 25 shows the ESR spectrum of Sample 1. [Figure 26] FIG. 26 shows the ESR spectrum of sample 2. [Figure 27] FIG. 27 shows the ESR spectrum of Comparative Sample 3. [Figure 28] FIG. 28 shows the ESR spectrum of Comparative Sample 4. [Figure 29] FIG. 29 shows the ESR spectrum of Comparative Sample 5. [Figure 30] FIG. 30 shows the ESR spectrum of Comparative Sample 6. [Figure 31] FIG. 31 shows the ESR spectrum of Comparative Sample 7. [Figure 32] FIG. 32 shows the ESR spectrum of Comparative Sample 8. [Figure 33] FIG. 33 shows the ESR spectrum of Comparative Sample 9. [Figure 34] FIG. 34 shows the ESR spectrum of a thin film obtained by co-evaporating PCBBiF and OCHD-003. [Figure 35] FIG. 35 is a graph showing the luminance-current density characteristics of the light-emitting device 1 and the reference light-emitting device 2. As shown in FIG. [Figure 36] FIG. 36 is a graph showing the luminance-voltage characteristics of the light-emitting device 1 and the reference light-emitting device 2. As shown in FIG. [Figure 37] FIG. 37 is a graph showing the current efficiency-current density characteristics of the light-emitting device 1 and the reference light-emitting device 2. As shown in FIG. [Figure 38] FIG. 38 is a graph showing the current density-voltage characteristics of the light-emitting device 1 and the reference light-emitting device 2. As shown in FIG. [Figure 39] FIG. 39 shows the electroluminescence spectra of the light-emitting device 1 and the reference light-emitting device 2. As shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0046] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes can be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0047] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. In addition, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0048] (Embodiment 1) One method widely used for forming organic semiconductor films into a predetermined shape is vacuum deposition using a metal mask (mask deposition). However, with the recent trend toward higher density and finer definition, mask deposition is approaching its limit for further finer definition due to various reasons, including issues with alignment accuracy and spacing with the substrate. On the other hand, by processing the shape of organic semiconductor films using photolithography, it is expected that organic semiconductor devices with more precise patterns will be realized. Furthermore, because photolithography is easier to process on a larger area than mask deposition, research into processing organic semiconductor films using photolithography is underway.

[0049] It has also long been known that exposure to atmospheric components such as water and oxygen can affect the initial characteristics or reliability of the organic compound layers and cathodes in organic EL devices, and they are typically handled in an inert gas atmosphere or a near-vacuum atmosphere.

[0050] In particular, alkali metals or alkaline earth metals, or their compounds (hereinafter also referred to as Li compounds, etc.), may be used in the electron injection layer of light-emitting devices. However, these Li compounds, etc., are highly reactive with water or oxygen and are prone to deterioration when exposed to the atmosphere, resulting in a significant decrease in electron injection properties. Furthermore, even when other metals with a small work function are used in the cathode, exposure to water, oxygen, etc. may also result in a decrease in electron injection properties, resulting in a significant increase in driving voltage.

[0051] During the photolithography process described above, the light-emitting device must be exposed to the atmosphere during fabrication. Furthermore, the photolithography process involves the use of various chemicals and a cleaning process, creating harsh conditions that accelerate deterioration.

[0052] Therefore, when the cathode and organic compound layer are processed by photolithography, the electron injection properties of the cathode and electron injection layer may be significantly reduced. As a result, organic EL devices processed by photolithography have a significantly increased driving voltage, making it difficult to obtain good characteristics.

[0053] To avoid this degradation, a photolithographic processing step can be performed before the formation of the electron injection layer and cathode, and then the formation of the electron injection layer and cathode can be performed afterward. However, by processing the electron injection layer and cathode films using photolithography after their formation, the number of steps required for the photolithographic processing step can be minimized. Furthermore, the organic compound layer can be significantly reduced in contact with chemicals and the atmosphere, achieving performance similar to that of a light-emitting device fabricated without exposure to the atmosphere.

[0054] Therefore, one embodiment of the present invention provides a light-emitting device having a first electrode, an organic compound layer, and a second electrode from the substrate side, in which the organic compound layer and the second electrode are manufactured by processing an organic compound film that becomes the organic compound layer and a conductive film that becomes the second electrode by photolithography.

[0055] Specifically, Figure 1A shows a schematic diagram of a light-emitting device of one embodiment of the present invention. The light-emitting device includes a first electrode 101 over an insulating layer 1000 and an organic compound layer (also referred to as an EL layer) 103 between the first electrode 101 and a second electrode 102. The organic compound layer 103 includes at least a light-emitting layer 113 and an electron-injection layer 115. The light-emitting layer 113 contains a light-emitting substance and emits light when a voltage is applied between the first electrode 101 and the second electrode 102. In the light-emitting device shown in Figure 1A, the first electrode 101 functions as an anode, and the second electrode 102 functions as a cathode.

[0056] 1(A), the organic compound layer 103 preferably has functional layers such as a hole injection layer 111, a hole transport layer 112, and an electron transport layer 114 in addition to the light-emitting layer 113 and the electron injection layer 115. The organic compound layer 103 may also include functional layers other than those described above, such as a hole blocking layer, an exciton blocking layer, and an intermediate layer. Conversely, any of the layers described above may not be provided.

[0057] In the light-emitting device of one embodiment of the present invention, an organic compound film to be the organic compound layer 103 and a conductive film to be the second electrode 102 are formed, and then these films are processed by photolithography to form the organic compound layer 103 and the second electrode 102. Therefore, as shown in FIG. 1A, an end portion of the second electrode 102 in a cross section and an end portion of the organic compound layer 103 in a cross section are aligned in a direction approximately perpendicular to the surface of the insulating layer 1000.

[0058] As described above, if the high reactivity of the alkali metal compounds and the like used in the electron injection layer is one of the factors that cause the layer to react sensitively to processes such as exposure to the atmosphere, etching, and cleaning, and deteriorate, then it is thought that if a less reactive substance can be used in the electron injection layer instead of the alkali metal compounds and the like, it would be possible to suppress an increase in driving voltage even after processing by photolithography.

[0059] Thus, in a light-emitting device according to one embodiment of the present invention, a composite material in which a donor level (a SOMO (Singly Occupied Molecular Orbital) level or a HOMO (Highest Occupied Molecular Orbital) level) is formed by interaction between a metal and a first organic compound having electron-donating properties and an unshared electron pair, and which functions as an electron donor to a second organic compound having electron-transporting properties, is used for the electron-injection layer 115. This makes it possible to form the electron-injection layer 115 that has favorable electron-injection properties and is resistant to oxygen and water in the air as well as water and chemical solutions used in a processing step using a photolithography method, thereby enabling a light-emitting device with reduced driving voltage and high emission efficiency to be obtained.

[0060] Metals with a low work function, such as alkali metals and alkaline earth metals, and their compounds are highly reactive with oxygen and water, and therefore, when used in a light-emitting device processed by lithography, they can cause a decrease in luminous efficiency, an increase in driving voltage, a decrease in driving life, the generation of non-light-emitting regions at the edges of the light-emitting portion, and the like, which can lead to a decrease in the characteristics and reliability of the light-emitting device. However, in one embodiment of the present invention, even when an alkali metal or alkaline earth metal or a compound thereof is used, it is stabilized by mutual interaction with a first organic compound that has electron-donating properties and an unshared electron pair, and a second organic compound that has electron-transporting properties, and therefore it is possible to form an electron-injection layer 115 that is resistant to oxygen and water in the atmosphere, as well as to water and chemical solutions used in lithography processes. In the light-emitting device of one embodiment of the present invention, by using an alkali metal or an alkaline earth metal, or a compound thereof as the metal, the donor level (SOMO level or HOMO level) formed by mutual interaction with the first organic compound having an electron-donating property and an unshared electron pair can be set to a high energy level, and electrons can be easily donated to the second organic compound having an electron-transporting property. Therefore, this is preferable because the barrier for electron injection from the second electrode 102 to the organic compound layer 103 can be reduced and a structure in which electrons injected from the second electrode 102 are smoothly injected and transported to the light-emitting layer 113 can be formed.

[0061] In addition, in a light-emitting device according to one embodiment of the present invention, any one of metal elements belonging to Groups 3 to 11 and metal elements belonging to Groups 12 to 14 can be used as the metal. These metals have low reactivity with oxygen and water in the air and with water and chemicals used in a lithography process. Therefore, when used in a light-emitting device, they have the advantage of being less susceptible to deterioration by water and oxygen, which is a concern when a metal with a low work function is used. On the other hand, metal elements belonging to Groups 3 to 11 and metal elements belonging to Groups 12 to 14 are stable and have low electron injection properties, which can cause a decrease in the light-emitting efficiency of a light-emitting device, an increase in driving voltage, a decrease in driving lifetime, and the like. However, in one embodiment of the present invention, even when any one of metal elements belonging to Groups 3 to 11 and metal elements belonging to Groups 12 to 14 is used, it can form a donor level (SOMO level or HOMO level) by interacting with a first organic compound having an electron-donating property and an unshared electron pair, and can donate electrons to a second organic compound having an electron-transporting property. Therefore, a structure can be formed in which the barrier for electron injection from the second electrode to the organic compound layer 103 is reduced and electrons injected from the second electrode 102 are smoothly injected and transported to the light-emitting layer 113. In addition, this is preferable because the electron-injection layer 115 can be formed to be resistant to oxygen and water in the air, as well as water and chemicals used in lithography processes. Therefore, one embodiment of the present invention can provide a light-emitting device that has excellent moisture resistance, water resistance, oxygen resistance, and chemical resistance, a low driving voltage, and high emission efficiency.

[0062] When a first organic compound having electron-donating properties and an unshared electron pair interacts with a metal, it is preferable that the total number of electrons in the compound and the metal is odd, because this reduces the stabilization energy and allows the donor level (SOMO level or HOMO level) to be at a high energy level. Therefore, when the number of electrons in the compound is even, it is preferable that the metal belongs to an odd-numbered group in the periodic table.

[0063] <Quantum chemical calculations for spin density and electrostatic potential estimation in interactions between metals and organic compounds> Here, we performed quantum chemical calculations to analyze the spin density and electrostatic potential (ESP) when a metal, a first organic compound with electron-donating properties and a lone electron pair, and a second organic compound with electron-transporting properties interact. The calculations were performed using 4,7-di-1-pyrrolidinyl-1,10-phenanthroline (abbreviated as Pyrrd-Phen) as the first organic compound, 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen) as the second organic compound, and silver (Ag) as the metal.

[0064] The quantum chemistry calculation program used was Gaussian09. Calculations were performed on an HPE SGI8600. Density functional theory (DFT) was used to calculate the most stable structures of the ground states of the first and second organic compounds, as well as the composites of the first and second organic compounds and metals. The basis functions used were 6-311G(d,p) and LanL2DZ, and the functional used was B3LYP. The total energy in DFT is expressed as the sum of potential energy, electrostatic energy between electrons, electron kinetic energy, and exchange-correlation energy, which includes all complex interactions between electrons. DFT approximates the exchange-correlation interaction with a functional (a function of a function) of the single-electron potential expressed in terms of electron density, resulting in highly accurate calculations.

[0065] The analysis results of the spin density distribution in the ground state of a composite material of the first organic compound (Pyrrd-Phen) and a metal (Ag), a composite material of the second organic compound (NBPhen) and a metal (Ag), and a composite material of the first organic compound (Pyrrd-Phen), the second organic compound (NBPhen), and a metal (Ag) are shown in Figures 2(A), 2(B), and 2(C), respectively. The spheres in the figures represent the atoms that make up the compounds, and the clouds around the atoms represent the electron density distribution threshold of 0.003e / a0 in atomic units. 3 (e is the elementary charge (1e=1.60218×10 -19 C), a0 is the Bohr radius (1a0=5.29177×10 -11 The graph shows the spin density distribution when the first organic compound (Pyrrd-Phen) and the second organic compound (NBPhen) are in the singlet ground state, and the localized state of the doublet ground state in the compound is shown. Note that the ground state of the first organic compound (Pyrrd-Phen) and the ground state of the second organic compound (NBPhen) are in the singlet ground state, so no spin density distribution is observed.

[0066] In the doublet ground state of the composite of the first organic compound (Pyrrd-Phen) and the metal (Ag), the first organic compound (Pyrrd-Phen) and the metal (Ag) interact with each other, and the metal (Ag) coordinates to two nitrogen atoms (N atoms at positions 1 and 10) with unshared electron pairs in the 1,10-phenanthroline ring of the first organic compound (Pyrrd-Phen), stabilizing the composite. As a result, as shown in Figure 2(A), some of the spins derived from the unpaired electrons of the metal (Ag) are distributed to parts of the 1,10-phenanthroline ring of the first organic compound (Pyrrd-Phen), particularly the two nitrogen atoms (N atoms at positions 1 and 10) with unshared electron pairs. However, due to the weak interaction, most of the spins are distributed to the metal (Ag).

[0067] In addition, in the doublet ground state of the composite of the second organic compound (NBPhen) and the metal (Ag), the second organic compound (NBPhen) and the metal (Ag) interact with each other, and the metal (Ag) coordinates to two nitrogen atoms with unshared electron pairs (the nitrogen atoms (N) at positions 1 and 10) in the 1,10-phenanthroline ring of the second organic compound (NBPhen), stabilizing the composite. As a result, as shown in Figure 2(B), some of the spins derived from the unpaired electrons of the metal (Ag) are distributed to parts of the 1,10-phenanthroline ring of the second organic compound (NBPhen), particularly the two nitrogen atoms with unshared electron pairs (the nitrogen atoms (N) at positions 1 and 10). However, due to the weak interaction, most of the spins are distributed to the metal (Ag).

[0068] On the other hand, in the doublet ground state of the composite of the first organic compound (Pyrrd-Phen), the second organic compound (NBPhen), and the metal (Ag), the first organic compound (Pyrrd-Phen), the second organic compound (NBPhen), and the metal (Ag) interact with each other, and the metal (Ag) coordinates to two nitrogen atoms (N1 and N10) with unshared electron pairs in the 1,10-phenanthroline ring of the first organic compound (Pyrrd-Phen) and two nitrogen atoms (N1 and N10) with unshared electron pairs in the 1,10-phenanthroline ring of the second organic compound (NBPhen), stabilizing the composite. As a result, the spin originating from the unpaired electron in the metal (Ag) is localized in the second organic compound (NBPhen), as shown in Figure 2(C). Furthermore, no spin density distribution is observed in the metal (Ag). This indicates that the second organic compound (NBPhen) is in a radical anion state due to the interaction between the first organic compound (Pyrrd-Phen), the second organic compound (NBPhen), and the metal (Ag).

[0069] Next, the results of electrostatic potential map analysis in the ground state for the first organic compound (Pyrrd-Phen), the second organic compound (NBPhen), a composite of the first organic compound (Pyrrd-Phen) and a metal (Ag), a composite of the second organic compound (NBPhen) and a metal (Ag), and a composite of the first organic compound (Pyrrd-Phen), the second organic compound (NBPhen), and a metal (Ag) are shown in Figures 3(A), 3(B), 4(A), 4(B), and 4(C), respectively. The spheres in the figures represent the atoms that make up the compounds, and the clouds around the atoms represent the electron density distribution threshold of 0.003 e / a0 in atomic units. 3 The figure shows the ESP in the electron density distribution when the electron density distribution is 1 / 2. The ESP is the interaction energy between a positive point charge with a unit charge and the electron distribution of a molecule. The electrostatic potential map shows the ESP on the isoelectron density surface using color. In the electrostatic potential map, regions with negative ESP are shown in red and regions with positive ESP are shown in blue, indicating that atoms in regions with negative ESP have a negative charge and atoms in regions with positive ESP have a positive charge. However, since Figures 3(A) to 4(C) are images of electrostatic potential maps obtained by analysis converted to grayscale, the dark red areas (i.e., regions with negative ESP) are surrounded by thick dotted lines, and the dark blue areas (i.e., regions with positive ESP) are surrounded by thin dashed lines to indicate regions with negative and positive ESP.

[0070] As shown in Figure 3(A), in the singlet ground state of the first organic compound (Pyrrd-Phen), the ESPs around the two nitrogen atoms (the nitrogen atoms (N) at positions 1 and 10) with unshared electron pairs in the 1,10-phenanthroline ring are negative. Furthermore, the Mulliken partial charges of the two nitrogen atoms are both negative, at -0.29e in atomic units. These results indicate that the two nitrogen atoms have negative partial charges.

[0071] Furthermore, as shown in Figure 3(B), in the singlet ground state of the second organic compound (NBPhen), the ESPs around the two nitrogen atoms (the nitrogen atoms (N) at positions 1 and 10) with unshared electron pairs in the 1,10-phenanthroline ring are negative. Furthermore, the Mulliken partial charges of the two nitrogen atoms are both negative, at -0.34e in atomic units. These results indicate that the two nitrogen atoms have negative partial charges.

[0072] Furthermore, in the doublet ground state of the composite material of the first organic compound (Pyrrd-Phen) and the metal (Ag), the first organic compound (Pyrrd-Phen) and the metal (Ag) interact with each other, and the metal (Ag) coordinates to two nitrogen atoms (N at positions 1 and 10) with lone electron pairs in the 1,10-phenanthroline ring of the first organic compound (Pyrrd-Phen), stabilizing the composite material. As a result, as shown in Figure 4(A), the ESP around the two nitrogen atoms (N at positions 1 and 10) with lone electron pairs in the 1,10-phenanthroline ring of the first organic compound (Pyrrd-Phen) and the metal (Ag) is negative. The Mulliken partial charges of the two nitrogen atoms were -0.37e in atomic units, and the Mulliken partial charge of the metal (Ag) was -0.18e in atomic units, both of which were negative. These results indicate that the two nitrogen atoms and the Ag atom have negative partial charges.

[0073] Furthermore, in the doublet ground state of the composite of the second organic compound (NBPhen) and the metal (Ag), the second organic compound (NBPhen) interacts with the metal (Ag), and the metal (Ag) coordinates to two nitrogen atoms (N at positions 1 and 10) with lone electron pairs in the 1,10-phenanthroline ring of the second organic compound (NBPhen), stabilizing the composite. As a result, as shown in Figure 4(B), the ESPs around the two nitrogen atoms (N at positions 1 and 10) with lone electron pairs in the 1,10-phenanthroline ring of the second organic compound (NBPhen) and the metal (Ag) are negative. The Mulliken partial charges of the two nitrogen atoms are -0.45e and -0.39e in atomic units, respectively, and the Mulliken partial charge of the metal (Ag) is -0.06e in atomic units, both of which are negative. From these facts, it is clear that the two nitrogen atoms and the Ag atom have negative partial charges.

[0074] On the other hand, in the doublet ground state of the composite material of the first organic compound (Pyrrd-Phen), the second organic compound (NBPhen), and the metal (Ag) according to one embodiment of the present invention, the first organic compound (Pyrrd-Phen), the second organic compound (NBPhen), and the metal (Ag) interact with each other, and the metal (Ag) coordinates to two nitrogen atoms having lone pairs (the nitrogen atoms (N) at positions 1 and 10) in the 1,10-phenanthroline ring of the first organic compound (Pyrrd-Phen) and to two nitrogen atoms having lone pairs (the nitrogen atoms (N) at positions 1 and 10) in the 1,10-phenanthroline ring of the second organic compound (NBPhen), thereby stabilizing the composite material and forming it. As a result, as shown in Figure 4(C), it was found that positive ESPs were predominantly distributed around the metal (Ag) and the first organic compound (Pyrrd-Phen), while negative ESPs were predominantly distributed around the second organic compound (NBPhen). Furthermore, it was found that the ESPs around the two nitrogen atoms (N at positions 1 and 10) with lone electron pairs in the 1,10-phenanthroline ring of the second organic compound (NBPhen) were negative, while the ESP around the metal (Ag) was positive. Furthermore, the Mulliken partial charges of the two nitrogen atoms were negative (-0.52e in atomic units), while the Mulliken partial charge of the metal (Ag) was positive (0.39e in atomic units). These results indicate that the charge of the Ag atom is distributed across the two nitrogen atoms.

[0075] From the above, it can be seen that this combination forms a donor level by interaction between a first organic compound having electron-donating properties and an unshared electron pair and a metal, and further functions as an electron donor for a second organic compound having electron-transporting properties. In one embodiment of the present invention, by using a composite material of this combination for the electron-injection layer 115, it is possible to form the electron-injection layer 115 that has good electron-injection properties and is resistant to oxygen and water in the air, as well as water and chemical solutions used in lithography processes. Therefore, a light-emitting device with reduced driving voltage and high emission efficiency can be obtained.

[0076] <Estimation of SOMO or HOMO levels in interactions between metals and organic compounds by quantum chemical calculations> Next, we used quantum chemical calculations to estimate the stabilization energy when a metal, a first organic compound with electron-donating properties and an unshared electron pair, and a second organic compound with electron-transporting properties interact, as well as the donor level (SOMO level or HOMO level) formed at that time.

[0077] The quantum chemistry calculation program used was Gaussian09. Calculations were performed on an HPE SGI8600. First, the ground states of the first organic compound, the second organic compound, and the metal were calculated using density functional theory (DFT) to determine the most stable structures in the ground states of the first organic compound-metal composite, the second organic compound-metal composite, and the first organic compound-metal composite, the second organic compound-metal composite, and the first organic compound-metal composite. The basis functions used were 6-311G(d,p) and LanL2DZ, and the functional used was B3LYP. Next, the stabilization energy was calculated from the difference between the total energy of the organic compound-metal composite and the sum of the total energy of the organic compound alone and the total energy of the metal alone. That is, (stabilization energy) = (total energy of the organic compound-metal composite) - (total energy of the organic compound alone) - (total energy of the metal alone).

[0078] The following tables show the calculation results of the stabilization energies of the composite material of the first organic compound and a metal, the composite material of the second organic compound and a metal, and the composite material of the first organic compound, the second organic compound, and the donor levels (HOMO levels or SOMO levels) of the first organic compound, the second organic compound, the composite material of the first organic compound and a metal, the composite material of the second organic compound and a metal, and the composite material of the first organic compound, the second organic compound, and the metal. Note that the donor levels (HOMO levels or SOMO levels) in each table are calculated values ​​and may differ from actual measurements.

[0079] First, the calculation results are shown in the table below using 4,7-di-1-pyrrolidinyl-1,10-phenanthroline (abbreviation: Pyrrd-Phen) as the first organic compound, 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P) as the second organic compound, and zinc (Zn) as the metal.

[0080] [Table 1]

[0081] The table above shows that the stabilization energies of the composite material of metal (Zn) and the first organic compound (Pyrrd-Phen) and the composite material of metal (Zn) and the second organic compound (mPPhen2P) are negative. This indicates that when either the first or second organic compound is mixed with a metal, the organic compound and the metal interact, making the resulting mixture energetically more stable than the organic compound alone, and the difference is small. Furthermore, the HOMO levels formed in this case are only slightly different from the HOMO levels of the first organic compound (Pyrrd-Phen) and the second organic compound (mPPhen2P), indicating that the interaction between each organic compound and the metal is weak.

[0082] On the other hand, the stabilization energy of the composite material of a metal (Zn), a first organic compound (Pyrrd-Phen), and a second organic compound (mPPhen2P), which is preferably used for the electron-injection layer 115 of the light-emitting device of one embodiment of the present invention, is smaller than that of the composite material of a metal (Zn), a first organic compound (Pyrrd-Phen) and that of the composite material of a metal (Zn), and a second organic compound (mPPhen2P), indicating that the composite material is energetically stable. Thus, the stabilization energy of the composite material of a metal, a first organic compound, and a second organic compound is preferably −0.50 eV or less, more preferably −1.0 eV or less, −2.0 eV or less, −3.0 eV or less, or −4.0 eV or less. Furthermore, the HOMO level formed in this case is higher than that of the first organic compound (Pyrrd-Phen) and the second organic compound (mPPhen2P). A high HOMO level is preferable because it provides excellent electron injection properties.

[0083] Next, the results of calculations using Pyrrd-Phen as the first organic compound, mPPhen2P as the second organic compound, and calcium (Ca) or magnesium (Mg) as the metal are shown in the table below.

[0084] [Table 2]

[0085] As shown in the table above, when alkaline earth metals (Ca, Mg) are used as the metal, the stabilization energy of the composite material of the metal, the first organic compound, and the second organic compound is -2.0 eV or less, making it more stable in terms of energy and preferable. Furthermore, the HOMO level formed in this case is higher than the HOMO levels of the first organic compound and the second organic compound. A high HOMO level is preferable because it provides excellent electron injection properties.

[0086] Next, the results of calculations using Pyrrd-Phen as the first organic compound, mPPhen2P as the second organic compound, and a metal belonging to an odd group (Group 1, 3, 5, 7, 9, 11, or 13) as the metal, specifically lithium (Li), aluminum (Al), silver (Ag), copper (Cu), or indium (In), are shown in the table below.

[0087] [Table 3]

[0088] As shown in the table above, when a metal belonging to the odd group is used, the stabilization energies of the composite material of the metal, the first organic compound, and the second organic compound are -1.0 eV or less, -2.0 eV or less, -3.0 eV or less, or -4.0 eV or less, respectively, making it more energetically stable and preferable. Furthermore, the SOMO level formed in this case is higher than the HOMO levels of the first organic compound and the second organic compound. A high SOMO level is preferable because it provides excellent electron injection properties.

[0089] In the fabrication process of light-emitting devices, organic compound films that become the organic compound layers of light-emitting devices are generally formed by vacuum deposition. In this case, it is preferable to use materials that can be easily vacuum-deposited, i.e., materials with low melting points. Metals of Group 11 and Group 13 elements have low melting points and are therefore suitable for vacuum deposition. Furthermore, metals of Group 11 and Group 13 elements are preferred because they are stable to oxygen and water in the atmosphere. Furthermore, vacuum deposition is preferred because it allows for easy mixing of metal atoms and organic compounds.

[0090] Ag or In can also be used as a cathode material. Using the same material for the electron-injection layer 115 and the second electrode 102 is preferable because it simplifies the manufacture of a light-emitting device. In addition, it can reduce the manufacturing cost of the light-emitting device.

[0091] Next, the configuration of the electron injection layer 115 that can be applied to a light-emitting device will be described in detail.

[0092] <Configuration of Electron Injection Layer 115> As described above, it is preferable to use a composite material having a metal, a first organic compound, and a second organic compound for the electron injection layer 115. The metal and the first organic compound interact with each other to form a donor level (SOMO level or HOMO level) and function as an electron donor for the second organic compound having electron transport properties. By using a composite material having this combination for the electron injection layer 115, it is possible to provide a light-emitting device that operates at a low voltage and emits light with high efficiency.

[0093] More specifically, the electron injection layer 115 is preferably a mixed layer containing a metal, a first organic compound, and a second organic compound. By forming a mixed layer containing a metal, a first organic compound, and a second organic compound, these substances can interact more easily. The first organic compound and the metal function as electron donors for the second organic compound, thereby reducing the barrier for electron injection from the second electrode 102 to the organic compound layer 103. This facilitates electron injection into the organic compound layer 103, thereby reducing the driving voltage of the light-emitting device and improving its light-emitting efficiency. Furthermore, by forming a mixed layer containing a metal, a first organic compound, and a second organic compound, the layer is less likely to crystallize than a layer with a stacked structure. Therefore, when forming the organic compound layer 103 and the second electrode 102 using lithography, the layer is less likely to crystallize even when affected by oxygen or water in the atmosphere or chemicals or water used in the process. Crystallization of the electron injection layer 115 can prevent an increase in the driving voltage or a decrease in the current efficiency of the light-emitting device. Therefore, by forming a mixed layer rather than a stacked structure, a composite material having a metal, a first organic compound, and a second organic compound can be suitably used for the electron injection layer 115 of a light-emitting device in which the organic compound layer 103 and the second electrode 102 are formed using a lithography method.

[0094] <metal> The metal may be a main group metal or a transition metal.

[0095] Typical metals that can be used include alkali metals (Group 1 elements) such as Li, Na, K, and Cs, alkaline earth metals (Group 2 elements) such as Mg, Ca, and Ba, Group 12 elements such as Zn, earth metals (Group 13 elements) such as Al and In, and Group 14 elements such as Sn, or compounds thereof.

[0096] By using an alkali metal or alkaline earth metal or a compound thereof as the metal, the donor level formed by mutual interaction with the first organic compound can be made to be a high energy level, and electrons can be easily donated to the second organic compound. Therefore, electrons injected from the second electrode 102 can be smoothly injected and transported to the light-emitting layer 113, and a light-emitting device that emits light with low driving voltage and high efficiency can be provided, which is preferable.

[0097] Examples of transition metals that can be used include Group 3 elements including lanthanides such as Y, Eu, and Yb, Group 7 elements such as Mn, Group 8 elements such as Fe, Group 9 elements such as Co, Group 10 elements such as Ni and Pt, and Group 11 elements such as Cu, Ag, and Au, as well as compounds thereof. Transition metals are preferred because they have low reactivity with components in the atmosphere such as water and oxygen.

[0098] Among the above, it is more preferable to use a metal belonging to an odd group (Group 1, Group 3, Group 5, Group 7, Group 9, Group 11, or Group 13). Among these odd group transition metals, metals having one electron (unpaired electron) in the outermost orbital are particularly preferable because they easily form a SOMO level with the first organic compound.

[0099] In addition, metals with low melting points that can be formed into films by vacuum deposition are preferred because they can easily form mixed layers with organic compounds. Specifically, for example, metals of Group 11 and Group 13 elements have low melting points and are therefore suitable for vacuum deposition. In addition, metals of Group 11 and Group 13 elements are preferred because they are stable to oxygen and water in the atmosphere.

[0100] <First organic compound> As the first organic compound, an organic compound having electron-donating properties and an unshared electron pair can be used. More specifically, an organic compound having a phenanthroline ring can be used as the first organic compound. In particular, among phenanthroline rings, an organic compound having a 1,10-phenanthroline ring is preferred because the two nitrogen atoms contained therein can coordinate to metals, and therefore interaction with metals occurs easily.

[0101] Furthermore, it is more preferable to use an organic compound having a phenanthroline ring with an electron-donating group as the first organic compound. In particular, introducing an electron-donating group into the 1,10-phenanthroline ring can increase the electron density of the phenanthroline ring and improve the efficiency of interaction with metals. Furthermore, it is preferable to have an electron-donating group at at least one of the 4- and 7-positions of the 1,10-phenanthroline ring. Introducing an electron-donating group into the 4- and 7-positions can increase the electron density of the nitrogen atoms at the 1- and 10-positions, which are para-positions. Furthermore, it is possible to increase the electron density around the nitrogen atoms at the 1- and 10-positions while avoiding steric crowding around them. Therefore, it is preferable because it facilitates interaction with metals. In this specification, a phenanthroline ring with an electron-donating group can be referred to as a phenanthroline ring into which an electron-donating group has been introduced or a phenanthroline ring to which an electron-donating group is bonded.

[0102] It is preferable that the minimum value of the ESP of the first organic compound is small (a negative value with a large absolute value), since this increases the efficiency of interaction with metals. In organic compounds having a phenanthroline ring, the electrostatic potential around the nitrogen atom of the phenanthroline ring tends to be negative. However, by introducing an electron-donating group into the phenanthroline ring, it is possible to further reduce the electrostatic potential around the nitrogen atom of the phenanthroline ring (increasing the absolute value of the negative value). The electrostatic potential is the interaction energy between a positive point charge with a unit charge and the electron distribution of the molecule. The value of the electrostatic potential also changes depending on the threshold of the electron density distribution. To increase the efficiency of interaction with metals, it is preferable that the minimum value of the electrostatic potential of the first organic compound is smaller (larger in the negative direction) than the minimum value of the electrostatic potential of a phenanthroline ring without a substituent. Specifically, it is preferable to set the threshold of the electron density distribution in the atomic unit system to 0.0004 e / a0 3 The minimum value of the electrostatic potential is -0.085E h (E h is the Hartree energy (1E h =27.211 eV) or less is preferred, -0.090E h It is more preferable that the threshold of the electron density distribution is 0.003e / a0 or less. 3 The minimum value of the electrostatic potential is -0.12E h Less than or equal to -0.13E is preferable h The following is even more preferred:

[0103] Furthermore, when the first organic compound has high basicity, it can significantly reduce the hole transport property in the electron injection layer 115 by interacting with holes, and can prevent holes from being transported from the electron injection layer 115 to the second electrode 102, which is preferable because it is possible to obtain an efficient light-emitting device. Specifically, the acid dissociation constant pKa of the first organic compound is preferably 8 or more, more preferably 10 or more, and even more preferably 12 or more.

[0104] Specific examples of the electron-donating group include an alkyl group, an alkoxy group, an aryloxy group, an alkylamino group, an arylamino group, and a heterocyclic amino group. However, the electron-donating group that is preferably introduced into the phenanthroline ring is not limited to these. Any group that can increase the electron density of the phenanthroline ring by introducing it into the phenanthroline ring can be used as the electron-donating group. In addition, the electron-donating group may be introduced into the phenanthroline ring via an arylene group such as a phenylene group, and the arylene group is preferably a p-phenylene group.

[0105] Alkyl groups are groups that are part of alkanes (C n H 2n+2 ) represents a monovalent group obtained by removing one hydrogen atom from the alkyl group. Specific examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, a sec-pentyl group, a tert-pentyl group, a neopentyl group, a hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, a neohexyl group, a 3-methylpentyl group, a 2-methylpentyl group, a 2-ethylbutyl group, a 1,2-dimethylbutyl group, and a 2,3-dimethylbutyl group.

[0106] The alkoxy group refers to a monovalent group in which an alkyl group is bonded to an oxygen atom. Specific examples of the alkoxy group include methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, sec-butoxy, isobutoxy, tert-butoxy, n-pentyloxy, isopentyloxy, sec-pentyloxy, tert-pentyloxy, neopentyloxy, n-hexyloxy, isohexyloxy, sec-hexyloxy, tert-hexyloxy, and neohexyloxy.

[0107] An aryloxy group refers to a monovalent group having an aryl group bonded to an oxygen atom. An aryl group refers to a monovalent group obtained by removing one hydrogen atom from one of the carbon atoms forming the ring of a monocyclic or polycyclic aromatic compound. Specific examples of aryloxy groups include phenoxy, o-tolyloxy, m-tolyloxy, p-tolyloxy, mesityloxy, o-biphenyloxy, m-biphenyloxy, p-biphenyloxy, 1-naphthyloxy, 2-naphthyloxy, and 2-fluorenyloxy. The aryloxy group may further have a substituent, and specific examples of the substituent include an alkyl group, an alkoxy group, and a phenyl group.

[0108] The alkylamino group is a monovalent group formed by removing one hydrogen atom from the nitrogen atom of a primary or secondary amine having one or two alkyl groups bonded to the nitrogen atom. Specific examples of the alkylamino group include a dimethylamino group and a diethylamino group.

[0109] An arylamino group is a monovalent group formed by removing one hydrogen atom from the nitrogen atom of a primary amine or secondary amine having one or two aryl groups bonded to the nitrogen atom. Specific examples of the arylamino group include a diphenylamino group, a bis(α-naphthyl)amino group, and a bis(m-tolyl)amino group. The arylamino group may further have a substituent, and specific examples of the substituent include an alkyl group, an alkoxy group, and a phenyl group.

[0110] An amino group having both an alkyl group and an aryl group bonded to a nitrogen atom can be called either an alkylamino group or an arylamino group. Specific examples of such amino groups include an N-methyl-N-phenylamino group.

[0111] The heterocyclic amino group refers to a monovalent group obtained by removing one hydrogen atom from one nitrogen atom among the atoms forming the ring of a heterocyclic amine. Here, the heterocyclic amine refers to a monocyclic or polycyclic heterocyclic compound in which at least one of the atoms forming the ring is a nitrogen atom to which a hydrogen atom is bonded. Specific examples of the heterocyclic amino group include groups represented by the following structural formulas (R-1) to (R-27). The heterocyclic amino group may further have a substituent, and specific examples of the substituent include an alkyl group, an alkoxy group, and a phenyl group.

[0112] [ka]

[0113] In addition, when the heterocyclic amino group has aromaticity, the unshared electron pair of the nitrogen atom contributes to aromaticity, and the electron donating ability to the phenanthroline ring may be reduced compared to when the unshared electron pair of the nitrogen atom does not contribute to aromaticity.Therefore, among the above-mentioned heterocyclic amino groups, heterocyclic amino groups in which the unshared electron pair of the nitrogen atom does not contribute to aromaticity are more preferred.Specifically, groups represented by structural formula (R-1), (R-2), (R-3), (R-4), (R-5), (R-8), (R-9), (R-10), (R-12), (R-14), (R-15), (R-16), (R-17), (R-18) or (R-22) are more preferred as electron donating groups. Among these, groups represented by structural formula (R-3), (R-4), (R-8) or (R-22) are preferred because they have high electron donating properties and can further increase the electron density of the phenanthroline ring.

[0114] Specific examples of the electron-donating group include groups represented by the following structural formulas (R-28) and (R-29).

[0115] [ka]

[0116] The organic compound having a phenanthroline ring that can be used as the first organic compound may have both the electron-donating group described above and other substituents. Introducing an electron-withdrawing group (e.g., a cyano group or a fluoro group) into the phenanthroline ring is undesirable because it reduces the electron density of the phenanthroline ring and may make it difficult for the phenanthroline ring to interact with metals. In addition to the electron-donating group described above, specific examples of substituents that can be introduced into the phenanthroline ring include aryl groups. Specific examples of aryl groups include phenyl groups, o-tolyl groups, m-tolyl groups, p-tolyl groups, mesityl groups, o-biphenyl groups, m-biphenyl groups, p-biphenyl groups, 1-naphthyl groups, 2-naphthyl groups, and 2-fluorenyl groups. The aryl group may further have a substituent, and specific examples of the substituent include alkyl groups, alkoxy groups, and phenyl groups.

[0117] The first organic compound may have a structure in which multiple phenanthroline rings are linked via a single bond or a divalent group. Specific examples of the divalent group include an alkylene group and an arylene group.

[0118] An alkylene group is a divalent group formed by removing two hydrogen atoms from an alkane. Specific examples of alkylene groups include divalent groups having a structure formed by removing one more hydrogen atom from the specific examples of alkyl groups described above.

[0119] An arylene group is a divalent group obtained by removing two hydrogen atoms from an aromatic hydrocarbon. Specific examples thereof include divalent groups having a structure in which one hydrogen atom has been removed from the specific examples of the aryl group described above. The arylene group may further have a substituent, and specific examples of the substituent include an alkyl group, an alkoxy group, and a phenyl group.

[0120] Specific examples of organic compounds having a phenanthroline ring that can be used as the first organic compound are shown in structural formulas (100) to (109). Note that the organic compounds that can be used as the first organic compound are not limited to these.

[0121] [ka]

[0122] <<Estimation of properties by quantum chemical calculations>> The minimum electrostatic potential (ESP) values ​​of the organic compounds represented by structural formulas (100) to (109) were estimated by quantum chemical calculations. For comparison, the minimum ESP values ​​of BPhen, mPPhen2P, NBPhen, and Phen were also estimated in the same manner. The structural formulas of BPhen, mPPhen2P, NBPhen, and Phen are shown below.

[0123] [ka]

[0124] The quantum chemistry calculation program used was Gaussian09. Calculations were performed using an SGI8600 manufactured by HPE. The most stable structure in the ground state of each organic compound was calculated using density functional theory (DFT). 6-311G(d,p) was used as the basis function, and B3LYP was used as the functional.

[0125] The table below shows the estimated minimum ESP values ​​for each organic compound, obtained by analyzing the electrostatic potential in the ground state of each organic compound. Note that the electrostatic potential is the interaction energy between a positive point charge with a unit charge and the electron distribution of the molecule. The value of the electrostatic potential also changes depending on the threshold of the electron density distribution. In the table below, the threshold of the electron density distribution in the atomic unit system is set to 0.0004e / a0 3 or 0.003e / a0 3The table shows the electrostatic potential in the electron density distribution when . In addition, in the table, the threshold of the electron density distribution is referred to as the density threshold.

[0126] [Table 4]

[0127] From the above table, the organic compounds represented by the structural formulas (100) to (105) have an electron density distribution threshold of 0.0004e / a0 3 When this is done, the minimum value of ESP is -0.085E h On the other hand, the minimum ESP value of the organic compounds represented by the structural formulas (106) to (109) is −0.085E h It turned out to be larger.

[0128] It can be seen that the organic compounds represented by structural formulas (100) to (105) have the most preferable values ​​because they have electron-donating groups at the 4- and 7-positions of the 1,10-phenanthroline ring.

[0129] The organic compound represented by structural formula (106) has electron-donating groups at the 4th and 7th positions of the 1,10-phenanthroline ring, but uses an N-carbazolyl group as the electron-donating group. In the N-carbazolyl group, the unshared electron pair of the nitrogen atom contributes to aromaticity, so compared to groups in which the unshared electron pair of the nitrogen atom does not contribute to aromaticity, the electron-donating ability to the phenanthroline ring is reduced, making it difficult to lower the minimum ESP value, resulting in the above results.

[0130] The organic compounds represented by structural formulas (107) to (109) are organic compounds having electron-donating groups at the 2- and 9-positions of the 1,10-phenanthroline ring. When the electron-donating groups are introduced at the 2- and 9-positions of the 1,10-phenanthroline ring, the electron-donating ability to the nitrogen atoms at the 1- and 10-positions of the 1,10-phenanthroline ring is lower than when the electron-donating groups are introduced at the 4- and 7-positions. Therefore, the substitution positions of the electron-donating groups on the 1,10-phenanthroline ring are preferably the 4- and 7-positions.

[0131] It is more preferable that the LUMO level of the second organic compound is lower than that of the first organic compound. This makes it easier for the donor level formed by the first organic compound and the metal to donate electrons to the second organic compound. It is also preferable that the second organic compound has electron transport properties, and for this reason, it is also preferable that the LUMO level of the second organic compound is lower than that of the first organic compound.

[0132] For example, the LUMO level of the first organic compound is preferably -3.0 eV or more and -2.0 eV or less, more preferably -2.7 eV or more and -2.0 eV or less. The LUMO level of the second organic compound is preferably -3.0 eV or more and -2.0 eV or less, more preferably -3.0 eV or more and -2.5 eV or less. This makes it easier for the donor level formed by the first organic compound and the metal to donate electrons to the second organic compound. This also improves the electron transport properties of the second organic compound.

[0133] The HOMO and LUMO levels of organic compounds are generally estimated by CV (cyclic voltammetry), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, etc. When comparing values ​​between different compounds, it is preferable to use values ​​estimated by the same measurement.

[0134] If the acid dissociation constant pKa of an organic compound is unknown, the acid dissociation constant pKa of each skeleton of the organic compound can be investigated, and the largest acid dissociation constant pKa selected from these can be regarded as the acid dissociation constant pKa of the organic compound.

[0135] Alternatively, the acid dissociation constant may be calculated. For example, the acid dissociation constant pKa can be calculated using the following calculation method.

[0136] The initial molecular structure of each molecule used as a calculation model is the most stable structure (singlet ground state) obtained from first-principles calculations.

[0137] The first-principles calculations were performed using Schrödinger's quantum chemistry calculation software, Jaguar, to calculate the most stable structure in the singlet ground state using density functional theory (DFT). The basis function used was 6-31G**, and the functional was B3LYP-D3. The structure used for the quantum chemistry calculations was sampled using Schrödinger's Maestro GUI, where conformational analysis was performed using mixed torsional / low-mode sampling.

[0138] For pKa calculations, one or more atoms of each molecule are designated as basic sites, and a Macro Model is used to search for the stable structure of the protonated molecule in water. A conformational search is performed using the OPLS2005 force field, and the lowest energy conformer is used. Using the Jaguar pKa calculation module, the structure is optimized with B3LYP / 6-31G*, followed by a single-point calculation with cc-pVTZ(+), and the pKa value is calculated using empirical corrections for functional groups. For molecules with one or more atoms designated as basic sites, the largest value obtained is used as the pKa value. The obtained pKa value is shown below.

[0139] The acid dissociation constant pKa of 2,9hpp2Phen (structural formula (109)) is 13.35, the acid dissociation constant pKa of 4,7hpp2Phen (structural formula (104)) is 13.42, the acid dissociation constant pKa of Pyrrd-Phen (structural formula (100)) is 11.23, the acid dissociation constant pKa of mPPhen2P is 5.16, the acid dissociation constant pKa of NBPhen is 5.59, and the acid dissociation constant pKa of BPhen is 5.62.

[0140] <Second organic compound> The second organic compound may be an organic compound having electron transport properties. The organic compound having electron transport properties may have an electron mobility of 1×10 or more at a square root of an electric field strength [V / cm] of 600. -7 cm 2 / Vs or more, preferably 1×10 -6 cm 2 A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes.

[0141] The organic compound having electron transport properties is preferably an organic compound having a π-electron-deficient heteroaromatic ring, and the organic compound having a π-electron-deficient heteroaromatic ring is preferably one or more of an organic compound having a heteroaromatic ring with an azole skeleton, an organic compound having a heteroaromatic ring with a pyridine skeleton, an organic compound having a heteroaromatic ring with a diazine skeleton, and an organic compound having a heteroaromatic ring with a triazine skeleton.

[0142] Specific examples of organic compounds having electron transport properties include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), and 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazone. Organic compounds with an azole skeleton, such as 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), and 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs), 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3, Organic compounds containing heteroaromatic rings with a pyridine skeleton, such as 5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), and 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), and 2-[3-(dibenzothiophen-4-yl)phenyl]di Benzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBP Nfpr), 9-[3'-(dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviated as 9pmDBtBPNfpr), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviated as 4,6mPnP2Pm), 4,6-bis[3-(dibenzothiophen-4-yl)phenyl]pyrimidine (abbreviated as 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviated as 4,6mCzP2Pm), 9,9'-[pyrimidinyl]pyrimidine 4,6-diphenyl-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 8-(biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofuro[2,3-b]pyrazine (abbreviation: 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2- d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)(1,1'-biphenyl-3-yl)]naphtho[1',2':4,5]furo[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), 8-[(2,2'-binaphthalen)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2,2'-(2,2'-bipyridine-6,6'-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 6,6'(P-Bqn)2BPy), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviation: 2,6(NP-PPm)2Py), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 2,6-bis(4-naphthalen-1-yl)phenylpyrimidine organic compounds with a diazine skeleton, such as 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H]phenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), and 7-[4-(9-phenyl-9H-carbazol-2-yl)quinazolin-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz); -fluoren]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl ]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-Indeno[2,1-b]carbazole (abbreviated as mINc(II)PTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviated as mDBtBPTzn), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz), 2-[3-(2,6-dimethyl-3-pyridinyl)-5-(9-phenanthrenyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviated as mPn-mDMePyPTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazin-2-yl]-11,12-dihydrazine Examples of organic compounds having a triazine skeleton include 2-12-phenylindolo[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), 2-[3'-(triphenylen-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviation: PCDBfTzn), and 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',1''-terphenyl)-4-yl]-1-dibenzofuranyl}-1,3,5-triazine (abbreviation: mBP-TPDBfTzn).

[0143] Among the above, organic compounds having a phenanthroline ring, such as BPhen, BCP, NBPhen, and mPPhen2P, especially a 1,10-phenanthroline ring, are particularly preferred because they readily interact with the first organic compound and metal. Furthermore, organic compounds having a phenanthroline ring dimer structure, such as mPPhen2P, are preferred because of their excellent stability.

[0144] The second organic compound preferably has a carbon number of 25 or more and 100 or less. By using such a carbon number, the organic compound can be made to have excellent sublimation properties, and therefore, thermal decomposition of the organic compound can be suppressed during vacuum deposition, resulting in good material utilization efficiency. In addition, the glass transition temperature (T g) of 100°C or more can be used. This makes it possible to make the electron injection layer 115 a layer that is difficult to crystallize. Therefore, when the organic compound layer 103 and the second electrode 102 are formed by lithography, the layer can be made to be difficult to crystallize even when it is affected by oxygen or water in the atmosphere, or by chemical solutions or water used in the process. Therefore, it is possible to prevent the electron injection layer 115 from crystallizing, which would otherwise cause an increase in the driving voltage or a decrease in the current efficiency of the light-emitting device. Therefore, T g By using an organic compound having a temperature of 100° C. or higher as the second organic compound, the composite material having a metal, the first organic compound, and the second organic compound can be suitably used for the electron injection layer 115 of a light-emitting device in which the organic compound layer 103 and the second electrode 102 are formed by lithography.

[0145] T g can be measured, for example, by using a differential scanning calorimeter (DSC8500 manufactured by PerkinElmer Japan Co., Ltd.) and placing a sample powder in an aluminum cell, followed by heating at a rate of 40° C. / min.

[0146] An organic compound having a phenanthroline ring and T g As an organic compound with a temperature of 100°C or higher, NBPhen (T g : 165℃), mPPhen2P(T g : 135 °C), 2,2'-(biphenyl-4,4'-diyl)bis(9-phenyl-1,10-phenanthroline) (abbreviation: PPhen2BP) (T g : 166 °C), 2,2'-biphenyl-3,3'-diylbis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2BP) (T g : 144 °C), 2,8-bis(phenanthroline-5-yl)dibenzofuran (abbreviation: 2,8Phen2DBf) (T g : 210℃), 5,5',5''-(benzene-1,3,5-triyl)tri-1,10-phenanthroline (abbreviation: Phen3P) (T g : 257℃), etc. gcan be measured, for example, by using a differential scanning calorimeter (DSC8500 manufactured by PerkinElmer Japan Co., Ltd.) and placing a sample powder in an aluminum cell, followed by heating at a rate of 40° C. / min.

[0147] Furthermore, an organic compound having an acid dissociation constant pKa of 4 or more and less than 8 can be used as the second organic compound. This can reduce the hole transport property of the second organic compound, thereby reducing the hole transport property in the electron injection layer 115 and preventing holes from being transported from the electron injection layer 115 to the second electrode 102, which is preferable because it allows for an efficient light-emitting device to be obtained. Furthermore, if the acid dissociation constant pKa is too high, the solubility in water increases, which may result in poor resistance to water and chemical solutions used in lithography processes. Therefore, the acid dissociation constant pKa of the second organic compound is preferably 4 or more and less than 8.

[0148] In a layer having a combination of a metal, a first organic compound, and a second organic compound, the interaction between the materials occurs more efficiently than in a layer having only two of these materials (for example, a layer having a metal and a first organic compound, or a layer having a metal and a second organic compound). This can be confirmed by preparing a film containing each material using an odd-numbered metal as the metal and measuring the spin density of the film by electron spin resonance (ESR).

[0149] For example, if the spin density measured by ESR of a mixed film containing a metal, a first organic compound, and a second organic compound is higher than the spin density measured by ESR of a mixed film containing a metal and a first organic compound or a mixed film containing a metal and a second organic compound, it can be confirmed that the interaction between the materials occurs more efficiently in a mixed film having a combination of a metal, a first organic compound, and a second organic compound compared to a mixed film containing only two of these materials. Note that the spin density measurement by electron spin resonance is preferably performed at room temperature.

[0150] More specifically, in each of the mixed film containing a metal and a first organic compound, the mixed film containing a metal and a second organic compound, and the mixed film containing the first organic compound and the second organic compound, the spin density resulting from a signal observed in the vicinity of a g-value of 2.00 by electron spin resonance spectroscopy is 2×10 16 spins / cm 3 When the ratio of the first organic compound to the second organic compound is less than 5×10, the spin density resulting from a signal observed in the vicinity of a g-value of 2.00 by electron spin resonance spectroscopy is 5×10 or less. 16 spins / cm 3 More preferably, 1×10 17 spins / cm 3 In the above cases, it can be confirmed that the interaction between the materials occurs more efficiently in a mixed film having a combination of a metal, a first organic compound, and a second organic compound, compared to a mixed film having only two of these materials. Note that the measurement of spin density by electron spin resonance is preferably performed at room temperature.

[0151] The molar ratio of the metal to the total of the first organic compound and the second organic compound is preferably 0.1 to 10, more preferably 0.2 to 5, and even more preferably 0.5 to 2. Alternatively, the volume ratio is preferably 0.01 to 0.3, more preferably 0.02 to 0.2, and even more preferably 0.05 to 0.1. Mixing the metal, the first organic compound, and the second organic compound at such a ratio can provide an electron injection layer with good electron injection properties. The volume ratio of the first organic compound to the second organic compound is preferably 0.1 to 10, more preferably 0.2 to 5, and even more preferably 0.5 to 2. Mixing the first organic compound and the second organic compound at such a ratio can provide an electron injection layer with good electron transport properties.

[0152] The thickness of the electron injection layer is preferably 3 nm to 20 nm, more preferably 5 nm to 10 nm, which allows the metal, the first organic compound, and the second organic compound to function well as a composite material, thereby providing a light-emitting device with high luminous efficiency.

[0153] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments.

[0154] (Embodiment 2) In this embodiment, a light-emitting device according to one embodiment of the present invention will be described in detail.

[0155] 1 is a schematic diagram of a light-emitting device of one embodiment of the present invention. The light-emitting device has a first electrode 101 provided over an insulating layer 1000, and an organic compound layer 103 between the first electrode 101 and a second electrode 102. The organic compound layer 103 has at least a light-emitting layer 113 and an electron-injection layer 115. The light-emitting layer 113 is a layer containing a light-emitting substance, and the light-emitting device of one embodiment of the present invention emits light when a voltage is applied between the first electrode 101 and the second electrode 102.

[0156] 1(A), the organic compound layer 103 preferably has functional layers such as a hole injection layer 111, a hole transport layer 112, and an electron transport layer 114 in addition to the light-emitting layer 113 and the electron injection layer 115. The organic compound layer 103 may also include functional layers other than those described above, such as a hole blocking layer, an exciton blocking layer, and an intermediate layer. Conversely, any of the layers described above may not be provided.

[0157] The electron injection layer 115 is a layer containing a metal, a first organic compound, and a second organic compound, as described in Embodiment 1. The specific configuration of the electron injection layer 115 has been described in detail in Embodiment 1, and therefore, a repeated description will be omitted.

[0158] The first electrode 101 and the second electrode 102 may be formed as a single layer structure or a laminated layer structure.

[0159] Note that the light-emitting device of one embodiment of the present invention is characterized in that, after the film to be the second electrode 102 is formed, processing is performed by photolithography. Therefore, an edge of the second electrode 102 in a cross section and an edge of the organic compound layer 103 in a cross section are aligned in a direction approximately perpendicular to the surface of the insulating layer 1000, as shown in Figure 1. The edge of the second electrode and the edge of the organic compound layer may be located inside the edge of the first electrode as shown in Figures 1(A) and 1(B) or outside the first electrode as shown in Figure 1(C).

[0160] The first electrode 101 is preferably formed using a metal, alloy, conductive compound, or mixture thereof having a large work function (specifically, 4.0 eV or more). Specific examples include indium oxide-tin oxide (ITO), indium oxide-tin oxide containing silicon or silicon oxide (ITSO), indium oxide-zinc oxide, and indium oxide containing tungsten oxide and zinc oxide (IWZO). These conductive metal oxide films are usually formed by sputtering, but they may also be formed by applying a sol-gel method or the like. For example, indium oxide-zinc oxide can be formed by sputtering using a target in which 1 to 20 wt % of zinc oxide is added to indium oxide. Indium oxide containing tungsten oxide and zinc oxide (IWZO) can also be formed by sputtering using a target containing 0.5 to 5 wt % tungsten oxide and 0.1 to 1 wt % zinc oxide relative to indium oxide. Other materials that can be used for the first electrode 101 include, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), titanium (Ti), aluminum (Al), and nitrides of metal materials (e.g., titanium nitride). The first electrode 101 can also be a stack of these materials. For example, a film in which Al, Ti, and ITSO are stacked in this order on Ti is preferable because it has good reflectivity, is highly efficient, and enables high resolution of several thousand ppi. Alternatively, graphene can be used for the first electrode 101. Note that by using a composite material capable of forming the hole injection layer 111 described later as a layer in contact with the first electrode 101 (typically, a hole injection layer), it becomes possible to select an electrode material regardless of the work function.

[0161] The hole injection layer 111 is provided in contact with the first electrode 101 and has the function of facilitating injection of holes into the organic compound layer 103. The hole injection layer 111 can be formed of a phthalocyanine-based compound or complex compound such as phthalocyanine (abbreviation: HPc) or copper phthalocyanine (abbreviation: CuPc), an aromatic amine compound such as 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB) or 4,4′-bis(N-{4-[N′-(3-methylphenyl)-N′-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), or a polymer such as poly(3,4-ethylenedioxythiophene) / (polystyrenesulfonic acid) (abbreviation: PEDOT / PSS).

[0162] Alternatively, the hole injection layer 111 may be formed of a substance having electron acceptor properties. Examples of the substance having acceptor properties include organic compounds having an electron-withdrawing group (such as a halogen group or a cyano group), such as 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ), and 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile. In particular, compounds in which an electron-withdrawing group is bonded to a fused aromatic ring having multiple heteroatoms, such as HAT-CN, are preferred because of their thermal stability. Radialene derivatives having electron-withdrawing groups (especially halogen groups such as fluoro groups, cyano groups, etc.) are also preferred because of their extremely high electron-accepting properties. Specific examples include α,α',α''-1,2,3-cyclopropanetriylidenetris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidenetris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], and α,α',α''-1,2,3-cyclopropanetriylidenetris[2,3,4,5,6-pentafluorobenzeneacetonitrile]. As the substance having acceptor properties, in addition to the organic compounds described above, transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide can be used.

[0163] The hole-injection layer 111 is preferably formed using a composite material containing the above-mentioned material having an acceptor property and an organic compound having a hole-transport property.

[0164] As the organic compound having hole transport properties used in the composite material, various organic compounds can be used, such as aromatic amine compounds, heteroaromatic compounds, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.). Note that the organic compound having hole transport properties used in the composite material can be 1×10 -6 cm 2 Preferably, the organic compound has a hole mobility of 1 / Vs or more. The organic compound having hole transport properties used in the composite material is preferably a compound having a fused aromatic hydrocarbon ring or a π-electron-rich heteroaromatic ring. As the fused aromatic hydrocarbon ring, an anthracene ring, a naphthalene ring, or the like is preferred. Furthermore, as the π-electron-rich heteroaromatic ring, a fused aromatic ring containing at least one of a pyrrole skeleton, a furan skeleton, and a thiophene skeleton is preferred, and specifically, a carbazole ring, a dibenzothiophene ring, or a ring in which an aromatic ring or a heteroaromatic ring is further fused to the above is preferred. Note that in this specification and the like, an organic compound having hole transport properties may be referred to as a material having hole transport properties.

[0165] Such organic compounds having hole-transporting properties preferably have a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, or an anthracene skeleton. In particular, aromatic amines having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, aromatic monoamines having a naphthalene ring, or aromatic monoamines in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group may be used. It is preferable that these organic compounds having hole-transporting properties are substances having an N,N-bis(4-biphenyl)amino group, since this allows the fabrication of light-emitting devices with long lifetimes.

[0166] Specific examples of organic compounds having hole transport properties as described above include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4''-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzylamine (abbreviation: BnfBB1BP), and N,N-bis(4-biphenyl)benzylamine (abbreviation: BnfBB1BP). N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-4-amino-p-terphenyl] ]-N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβ NB-03), 4,4'-diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl] 4'-[4'-(3-phenyl-9H-carbazol-9-yl)biphenyl-4-yl]-4''-phenyltriphenylamine (abbreviated as TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviated as αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviated as αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviated as YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazol-9-yl)furan N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N- Bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4' -[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'- Di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluoren]-2-amine (abbreviation: PCBASF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF), N,N-bis( Examples of such amines include N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-4-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-2-amine, and N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-1-amine.

[0167] In addition, other aromatic amine compounds such as N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B) can also be used as organic compounds having hole transport properties.

[0168] By forming the hole injection layer 111, the hole injection property becomes good, and a light emitting device with a low driving voltage can be obtained.

[0169] Among substances having acceptor properties, organic compounds having acceptor properties are easy to use because they can be easily vapor-deposited and formed into a film.

[0170] The hole transport layer 112 is formed by containing an organic compound having a hole transport property. -6 cm 2 It is preferable that the hole mobility is / Vs or more.

[0171] Examples of the organic compound having hole transport properties include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), N,N'-bis(9,9'-spirobi[9H-fluoren]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl- 3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviated as mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl)triphenylamine (abbreviated as PCBANB), Compounds with an aromatic amine skeleton, such as 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), and N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)benzene, and Bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviated as BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviated as CzTP), 9,9'-diphenyl-9H,9'H-3,3'-bicarbazole (abbreviated as PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviated as BisBPCz), 9,9'-bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviated as BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-Bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviation: βNCCP), 9-(3-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCmBP), 9-(4-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCBP), 9,9'-di-2-naphthyl-3,3'-9H,9'H-bicarbazole (abbreviation: BisβNCz), 9-(2-naphthyl)-9'-[1,1':4',1"-terf phenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-5'-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':4',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3 '-9H,9'H-Bicarbazole, 9-(2-naphthyl)-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-phenyl-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole (abbreviation: PCCzTp), 9,9'-bis(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(4-biphenyl)-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(triphenylen-2-yl)-9'-[1,1':3',1"-taphe compounds having a carbazole skeleton such as [4-yl-3,3'-9H,9'H-bicarbazole]; compounds having a thiophene skeleton such as 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV);Examples of the compounds include compounds having a furan skeleton, such as 4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among the compounds mentioned above, compounds having an aromatic amine skeleton and compounds having a carbazole skeleton are preferred because they have good reliability, high hole transport properties, and contribute to reducing driving voltage. Note that the substances listed as organic compounds having hole transport properties used in the composite material of the hole injection layer 111 can also be suitably used as materials for the hole transport layer 112.

[0172] The light-emitting layer 113 is a layer containing a light-emitting material, and preferably contains a light-emitting material and a host material. The light-emitting layer may also contain other materials. It may also be a laminate of two or more layers with different compositions.

[0173] The light-emitting material may be a fluorescent material, a phosphorescent material, a material that exhibits thermally activated delayed fluorescence (TADF), or any other light-emitting material.

[0174] Examples of materials that can be used as fluorescent materials in the light-emitting layer include the following: In addition, fluorescent materials other than these can also be used.

[0175] 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine )phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-( 10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis(N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviation: DPABPA), N,9 -diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine (abbreviated as 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviated as 2DPAPPA), N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviated as DBC1), Coumarin 30, N-(9,10-diphenyl-2-anthryl)-N,9-Diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA) , 9,10-bis(biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis(biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyra N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhTD), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhTD), Name: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB),6-Bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), N,N'-diphenyl-N,N'-(1,6-pyren-diyl)bis[(6-phenylbenzo[b]naphtho]] Examples include N,N'-diphenyl-N,N'-bis(9-phenyl-9H-carbazol-2-yl)naphtho[2,3-b;6,7-b']bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02), and 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02). In particular, condensed aromatic diamine compounds, such as pyrenediamine compounds 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03, are preferred because of their high hole-trapping properties and excellent luminous efficiency or reliability.

[0176] In addition, 5,9-diphenyl-5,9-diaza-13b-boranaphtho[3,2,1-de]anthracene (abbreviation: DABNA1), 9-(biphenyl-3-yl)-N,N,5,11-tetraphenyl-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborin-3-amine (abbreviation: DABNA2), 2,12-di(tert-butyl)-5,9-di(4-tert-butylphenyl)-N,N-diphenyl-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborin-7-amine (abbreviation: DABNA3), Amine (abbreviation: DPhA-tBu4DABNA), 2,12-di(tert-butyl)-N,N,5,9-tetra(4-tert-butylphenyl)-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborin-7-amine (abbreviation: tBuDPhA-tBu4DABNA), 2,12-di(tert-butyl)-5,9-di(4-tert-butylphenyl)-7-methyl-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborin (abbreviation: Me-tBu4DABNA), N 7 ,N 7 ,N 13 ,N 13 Fused heteroaromatic compounds containing nitrogen and boron, such as 5,9,11,15-octaphenyl-5H,9H,11H,15H-[1,4]benzazaborino[2,3,4-kl][1,4]benzazaborino[4',3',2':4,5][1,4]benzazaborino[3,2-b]phenazaborine-7,13-diamine (abbreviation: ν-DABNA) and 2-(4-tert-butylphenyl)benz[5,6]indolo[3,2,1-jk]benzo[b]carbazole (abbreviation: tBuPBibc), are particularly suitable for use as compounds having a diazaboranaphthoanthracene skeleton, since they have a narrow emission spectrum and can emit blue light with good color purity.

[0177] In addition to these, 9,10,11-tris[3,6-bis(1,1-dimethylethyl)-9H-carbazolyl-9-yl]-2,5,15,18-tetrakis(1,1-dimethylethyl)indolo[3,2,1-de]indolo[3',2',1':8,1][1,4]benzazaborino[2,3,4-kl]phenazaborine (abbreviation: BBCz-G), 9,11-bis[3,6-bis(1,1-dimethylethyl)-9H-carbazolyl-9-yl]-2,5,15,18-tetrakis(1,1-dimethylethyl)indolo[3,2,1-de]indolo[3',2',1':8,1][1,4]benzazaborino[2,3,4-kl]phenazaborine (abbreviation: BBCz-Y) and the like can be preferably used.

[0178] When a phosphorescent material is used as the light-emitting material in the light-emitting layer, examples of materials that can be used include the following.

[0179] organometallic iridium complexes having a 4H-triazole skeleton, such as tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]) and tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]); Organometallic iridium complexes with a 1H-triazole skeleton, such as tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]) and tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]), and fac-tris[1-(2,6-di [Ir(iPrpim)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3]), tris(2-{1-[2,6-bis(1-methylethyl)phenyl]-1H-imidazol-2-yl-κN3}-4-cyano organometallic iridium complexes with an imidazole skeleton, such as tris[(6-tert-butyl-3-phenyl-2H-imidazo[4,5-b]pyrazin-1-yl-κC2)phenyl-κC]iridium(III) (abbreviation: CNImIr), organometallic complexes with a benzimidazolidene skeleton, such as tris[(6-tert-butyl-3-phenyl-2H-imidazo[4,5-b]pyrazin-1-yl-κC2)phenyl-κC]iridium(III) (abbreviation: [Ir(cb)3]), and organometallic complexes with a benzimidazolidene skeleton, such as bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C 2’}iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ] Organometallic iridium complexes with phenylpyridine derivatives bearing electron-withdrawing groups as ligands, such as iridium(III) acetylacetonate (abbreviated as FIracac), are compounds that exhibit blue phosphorescence and have an emission peak in the wavelength range from 450 nm to 520 nm.

[0180] Also, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6- Organometallic iridium complexes with a pyrimidine skeleton, such as (2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm)2(acac)]) and (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]), organometallic iridium complexes with a pyrazine skeleton, such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]) and (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]), and tris(2-phenylpyridinato-N,C 2’) Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato-N,C 2’)iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: [Ir(5mppy-d3)2(mbfpypy-d3)]), [2-d3- Methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy)2(mbfpypy-d3)]), [2-(4-d3-methyl-5-phenyl-2-pyridinyl-κN2)phenyl-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy)2(mdppy)]), and rare earth metal complexes such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac)3(Phen)]). These compounds mainly exhibit green phosphorescence, with an emission peak in the wavelength range of 500 to 600 nm. Organometallic iridium complexes having a pyrimidine skeleton are particularly preferred because they are remarkably superior in reliability and luminous efficiency.

[0181] and organometallic iridium complexes having a pyrimidine skeleton, such as (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), and bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]). Organometallic iridium complexes with a pyrazine skeleton, such as (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), and (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), tris(1-phenylisoquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C 2’) iridium(III) acetylacetonate (abbreviated as [Ir(piq)2(acac)]), (3,7-diethyl-4,6-nonanedionato-κO4,κO6)bis[2,4-dimethyl-6-[7-(1-methylethyl)-1-isoquinolinyl-κN]phenyl-κC]iridium(III), and (3,7-diethyl-4,6-nonanedionato-κO4,κO6)bis[2,4-dimethyl-6-[5-(1-methylethyl)-2-quinolinyl-κN]phenyl-κC]iridium(III). In addition to iridium complexes, platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviated as PtOEP) and rare earth metal complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviated as [Eu(DBM)3(Phen)]) and tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviated as [Eu(TTA)3(Phen)]) are compounds that exhibit red phosphorescence, with peak emission in the wavelength range from 600 to 700 nm. Organometallic iridium complexes with a pyrazine skeleton also exhibit excellent red chromaticity.

[0182] In addition to the phosphorescent compounds described above, known phosphorescent compounds may be selected and used.

[0183] TADF materials include fullerene and its derivatives, acridine and its derivatives, eosin derivatives, etc. Also available are metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd). Examples of the metal-containing porphyrin include protoporphyrin-tin fluoride complex (SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF2(OEP)), etioporphyrin-tin fluoride complex (SnF2(Etio I)), and octaethylporphyrin-platinum chloride complex (PtCl2OEP), all of which are shown in the following structural formulas.

[0184] [ka]

[0185] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), and Heterocyclic compounds having one or both of a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, such as 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), and 10-phenyl-10H,10'H-spiro[acridin-9,9'-anthracene]-10'-one (abbreviation: ACRSA), can also be used. The heterocyclic compound has a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, and therefore has high electron transport and hole transport properties, and is therefore preferred. Among the skeletons having a π-electron-deficient heteroaromatic ring, pyridine skeleton, diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and triazine skeleton are preferred because they are stable and reliable. In particular, benzofuropyrimidine skeleton, benzothienopyrimidine skeleton, benzofuropyrazine skeleton, and benzothienopyrazine skeleton are preferred because they have high acceptor properties and good reliability. Furthermore, among the skeletons having a π-electron-rich heteroaromatic ring, acridine skeleton, phenoxazine skeleton, phenothiazine skeleton, furan skeleton, thiophene skeleton, and pyrrole skeleton are preferred because they are stable and reliable.The furan skeleton is preferably a dibenzofuran skeleton, and the thiophene skeleton is preferably a dibenzothiophene skeleton. The pyrrole skeleton is particularly preferably an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, or a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton. Substances in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded are particularly preferred because the electron-donating ability of the π-electron-rich heteroaromatic ring and the electron-accepting ability of the π-electron-deficient heteroaromatic ring are both enhanced, thereby reducing the energy difference between the S1 level and the T1 level, thereby enabling efficient thermally activated delayed fluorescence. Instead of the π-electron-deficient heteroaromatic ring, an aromatic ring bonded to an electron-withdrawing group such as a cyano group may be used. The π-electron-rich skeleton may be, for example, an aromatic amine skeleton or a phenazine skeleton. Examples of usable π-electron-deficient skeletons include a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or boranthrene, an aromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, a heteroaromatic ring, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, etc. In this way, a π-electron-deficient skeleton and a π-electron-rich skeleton can be used in place of at least one of a π-electron-deficient heteroaromatic ring and a π-electron-rich heteroaromatic ring.

[0186] [ka]

[0187] TADF materials are materials with a small difference between the lowest singlet excitation energy level (S1 level) and the lowest triplet excitation energy level (T1 level), and have the ability to convert triplet excitation energy to singlet excitation energy through reverse intersystem crossing. Therefore, triplet excitation energy can be upconverted to singlet excitation energy (reverse intersystem crossing) using a small amount of thermal energy, allowing for efficient generation of a singlet excited state. Furthermore, triplet excitation energy can be converted into luminescence.

[0188] Furthermore, exciplexes (also known as exciplexes), which form an excited state with two types of substances, have an extremely small difference between the S1 and T1 levels and function as TADF materials that can convert triplet excitation energy into singlet excitation energy.

[0189] Note that the phosphorescence spectrum observed at low temperatures (for example, 77 K to 10 K) can be used as an indicator of the T1 level. For a TADF material, when a tangent line is drawn at the base of the short wavelength side of the fluorescence spectrum and the energy of the wavelength of the extrapolated line is defined as the S1 level, and a tangent line is drawn at the base of the short wavelength side of the phosphorescence spectrum and the energy of the wavelength of the extrapolated line is defined as the T1 level, the difference between the S1 level and the T1 level is preferably 0.3 eV or less, and more preferably 0.2 eV or less.

[0190] When a TADF material is used as a light-emitting material, the S1 level of the host material is preferably higher than the S1 level of the TADF material, and the T1 level of the host material is preferably higher than the T1 level of the TADF material.

[0191] As the host material of the light-emitting layer, various carrier transport materials such as a material having an electron transport property and / or a material having a hole transport property, and the above-mentioned TADF material can be used.

[0192] Preferred materials having hole transport properties include organic compounds having an amine skeleton or a π-electron-rich heteroaromatic ring skeleton. The π-electron-rich heteroaromatic ring is preferably a fused aromatic ring containing at least one of an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton, and more specifically, a carbazole ring, a dibenzothiophene ring, or a ring in which an aromatic ring or a heteroaromatic ring is fused to one of these rings.

[0193] Such organic compounds having hole-transporting properties preferably have a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, or an anthracene skeleton. In particular, aromatic amines having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, aromatic monoamines having a naphthalene ring, or aromatic monoamines in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group may be used. It is preferable that these organic compounds having hole-transporting properties are substances having an N,N-bis(4-biphenyl)amino group, since this allows the fabrication of light-emitting devices with long lifetimes.

[0194] Examples of such organic compounds include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), N,N'-bis(9,9'-spirobi[9H-fluoren]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviated as mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PC Aromatic amines such as 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviated as PCBAF), and N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviated as PCBASF) Compounds with a carbazole skeleton, such as 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), and 9,9'-diphenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCP), 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,Examples of suitable materials include compounds having a thiophene skeleton, such as 8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III) and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and compounds having a furan skeleton, such as 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among the above, compounds having an aromatic amine skeleton or a carbazole skeleton are preferred because they have good reliability, high hole transport properties, and contribute to reducing driving voltage. The organic compounds listed as examples of materials having hole transport properties for the hole transport layer can also be used.

[0195] Preferred examples of the material having electron transport properties include metal complexes such as bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), and organic compounds having a π-electron-deficient heteroaromatic ring. Examples of organic compounds having a π-electron-deficient heteroaromatic ring skeleton include organic compounds containing a heteroaromatic ring having an azole skeleton, organic compounds containing a heteroaromatic ring having a pyridine skeleton, organic compounds containing a heteroaromatic ring having a diazine skeleton, and organic compounds containing a heteroaromatic ring having a triazine skeleton.

[0196] Among these, organic compounds containing a heteroaromatic ring having a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), organic compounds containing a heteroaromatic ring having a pyridine skeleton, and organic compounds containing a heteroaromatic ring having a triazine skeleton are preferred because of their high reliability. In particular, organic compounds containing a heteroaromatic ring having a diazine (pyrimidine or pyrazine) skeleton and organic compounds containing a heteroaromatic ring having a triazine skeleton have high electron transport properties and contribute to reduced driving voltage. In addition, benzofuropyrimidine skeletons, benzothienopyrimidine skeletons, benzofuropyrazine skeletons, and benzothienopyrazine skeletons are preferred because of their high acceptor properties and high reliability.

[0197] Examples of organic compounds having a π-electron-deficient heteroaromatic ring skeleton include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl]benzene] (abbreviation: OXD-8), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene] (abbreviation: OXD-9), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene] (abbreviation: OXD-1 ... )phenyl]-9H-carbazole (abbreviation: CO11), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs), and other organic compounds with an azole skeleton, such as 3,5-bis[3-(9H-carbazol-9-yl)phenyl]piperidin Lysine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), 2-[3-(2-triphenylenyl)phenyl]-1 Organic compounds containing heteroaromatic rings with a pyridine skeleton, such as 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 2-[4-(3,6-diphenyl-9 H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr), 9-[3 '-(Dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9pmDBtBPNfpr), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(dibenzothiophen-4-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 9,9'-[pyrimidine-4,6-diylbis (Biphenyl-3,3'-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 8-(biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofuro[2,3-b]pyrazine (abbreviation: 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)(1,1'-biphenyl-3-yl)]naphtho[1',2':4,5]furo[3,2-d]pyrimidine (abbreviated as 8mDBtBPNfpm), 8-[(2,2'-binaphthalen)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviated as 8(βN2)-4mDBtPBfpm), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviated as 2,6(P-Bqn) 2Py), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviated as 2,6(NP-PPm)2Py), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviated as 6mBP-4Cz2PPm), 2,6-bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviated as 2,4NP-6PyPPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]pyrimidine Organic compounds with a diazine skeleton, such as 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluoren]-2-yl)-pyrimidine (abbreviation: 6BP-4Cz2PPm), 7-[4-(9-phenyl-9H-carbazol-2-yl)quinazolin-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan -8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole Rubazole (abbreviation: mINc(II)PTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), 2-[3-(2,6-dimethyl-3-pyridinyl)-5-(9-phenanthrenyl)phenyl]-4,6- Diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-phenylindolo[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), 2-[3'-(triphenylen-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 3 Examples of suitable organic compounds include those containing a heteroaromatic ring with a triazine skeleton, such as -[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviation: PCDBfTzn) and 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',1''-terphenyl)-4-yl]-1-dibenzofuranyl}-1,3,5-triazine (abbreviation: mBP-TPDBfTzn). Organic compounds containing a heteroaromatic ring with a diazine skeleton, organic compounds containing a heteroaromatic ring with a pyridine skeleton, and organic compounds containing a heteroaromatic ring with a triazine skeleton are preferred due to their high reliability. In particular, organic compounds containing a heteroaromatic ring with a diazine (pyrimidine or pyrazine) skeleton and organic compounds containing a heteroaromatic ring with a triazine skeleton have high electron transport properties and contribute to reduced driving voltage.

[0198] The TADF materials that can be used as host materials are the same as those listed above. When a TADF material is used as a host material, the triplet excitation energy generated in the TADF material is converted to singlet excitation energy through reverse intersystem crossing, and the energy is then transferred to the light-emitting material, thereby improving the luminous efficiency of the light-emitting device. In this case, the TADF material functions as an energy donor, and the light-emitting material functions as an energy acceptor.

[0199] This is very effective when the luminescent material is a fluorescent luminescent material. In this case, in order to obtain high luminous efficiency, the S1 level of the TADF material is preferably higher than the S1 level of the fluorescent luminescent material. In addition, the T1 level of the TADF material is preferably higher than the S1 level of the fluorescent luminescent material. Therefore, the T1 level of the TADF material is preferably higher than the T1 level of the fluorescent luminescent material.

[0200] It is also preferable to use a TADF material that emits light that overlaps with the wavelength of the lowest-energy absorption band of the fluorescent material, as this allows for smooth transfer of excitation energy from the TADF material to the fluorescent material, resulting in efficient light emission.

[0201] Furthermore, to efficiently generate singlet excitation energy from triplet excitation energy through reverse intersystem crossing, carrier recombination is preferred in the TADF material. Furthermore, it is preferable that the triplet excitation energy generated in the TADF material does not transfer to triplet excitation energy in the fluorescent material. To achieve this, the fluorescent material preferably has a protecting group around the luminophore (the skeleton responsible for light emission) of the fluorescent material. The protecting group is preferably a substituent without a π bond, and is preferably a saturated hydrocarbon. Specific examples include alkyl groups with 3 to 10 carbon atoms, substituted or unsubstituted cycloalkyl groups with 3 to 10 carbon atoms, and trialkylsilyl groups with 3 to 10 carbon atoms. Multiple protecting groups are even more preferred. Substituents without a π bond have poor carrier transport properties, allowing for increased distance between the TADF material and the luminophore of the fluorescent material without significantly affecting carrier transport or carrier recombination. Here, the term "luminophore" refers to the atomic group (skeleton) responsible for light emission in the fluorescent material. The luminophore preferably has a skeleton having a π bond, preferably contains an aromatic ring, and preferably has a fused aromatic ring or a fused heteroaromatic ring. Examples of such luminophores include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, and a naphthobisbenzofuran skeleton. In particular, fluorescent materials having a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, or a naphthobisbenzofuran skeleton are preferred because of their high fluorescence quantum yield.

[0202] When a fluorescent emitting substance is used as the emitting substance, a material having an anthracene skeleton is suitable as the host material. Using a substance having an anthracene skeleton as a host material for a fluorescent emitting substance makes it possible to realize an emitting layer with both excellent luminous efficiency and durability. As a substance having an anthracene skeleton to be used as a host material, a diphenylanthracene skeleton, particularly a 9,10-diphenylanthracene skeleton, is preferred due to its chemical stability. Furthermore, host materials having a carbazole skeleton are preferred because of their enhanced hole injection and transport properties. However, host materials containing a benzocarbazole skeleton, in which a benzene ring is further condensed to the carbazole skeleton, are even more preferred because their HOMO level is approximately 0.1 eV higher than that of host materials having a carbazole skeleton, making it easier for holes to enter. In particular, host materials containing a dibenzocarbazole skeleton are preferred because their HOMO level is approximately 0.1 eV higher than that of host materials having a carbazole skeleton, making it easier for holes to enter, as well as providing excellent hole transport properties and high heat resistance. Therefore, a more preferable host material is a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton (or a benzocarbazole skeleton or a dibenzocarbazole skeleton). Note that, from the viewpoint of the hole injection / transport property, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.Examples of such substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-[4'-(9-phenyl-9H-fluoren-9-yl)biphenyl-4-yl] 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,β-ADN), 2-(10-phenylanthracen-9-yl)dibenzofuran, 2-(10-phenyl-9-anthracenyl)benzo Examples include zo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-{4-[10-(biphenyl-4-yl)-9-anthracenyl]phenyl}-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA), etc. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA are preferred choices because they exhibit very good properties.

[0203] The host material may be a mixture of multiple substances, and when a mixture of host materials is used, it is preferable to mix a material having electron-transporting properties with a material having hole-transporting properties. By mixing a material having electron-transporting properties with a material having hole-transporting properties, the transport properties of the light-emitting layer 113 can be easily adjusted, and the recombination region can also be easily controlled. The weight ratio of the content of the material having hole-transporting properties to the material having electron-transporting properties (material having hole-transporting properties:material having electron-transporting properties) may be 1:19 to 19:1.

[0204] A phosphorescent material can be used as part of the mixed material. The phosphorescent material can be used as an energy donor that provides excitation energy to a fluorescent material when the fluorescent material is used as a light-emitting material.

[0205] Furthermore, these mixed materials may form an exciplex. It is preferable to select a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, because this allows for smooth energy transfer and efficient light emission. Furthermore, using this structure is also preferable because it reduces the driving voltage.

[0206] At least one of the materials forming the exciplex may be a phosphorescent material, which allows efficient conversion of triplet excitation energy into singlet excitation energy through reverse intersystem crossing.

[0207] As a combination of materials that efficiently form an exciplex, it is preferable that the HOMO level of the hole-transporting material is equal to or higher than the HOMO level of the electron-transporting material. It is also preferable that the LUMO level of the hole-transporting material is equal to or higher than the LUMO level of the electron-transporting material. The LUMO and HOMO levels of the materials can be derived from the electrochemical properties (reduction potential and oxidation potential) of the materials measured by cyclic voltammetry (CV).

[0208] The formation of exciplexes can be confirmed by, for example, comparing the emission spectra of a hole-transporting material, an electron-transporting material, and a mixed film of these materials and observing the phenomenon that the emission spectrum of the mixed film is shifted to longer wavelengths than the emission spectra of each material (or has a new peak at longer wavelengths). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of a hole-transporting material, the transient PL of an electron-transporting material, and a mixed film of these materials and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer-lived component or a larger proportion of delayed components than the transient PL lifetimes of the individual materials. The above-mentioned transient PL can also be interpreted as transient electroluminescence (EL). In other words, the formation of exciplexes can also be confirmed by comparing the transient EL of a hole-transporting material, the transient EL of an electron-transporting material, and a mixed film of these materials and observing differences in transient response.

[0209] The electron-transporting layer 114 is a layer containing a substance having an electron-transporting property. The substance having an electron-transporting property is a material having an electron mobility of 1×10 or more at a square root of an electric field strength [V / cm] of 600. -7 cm 2 / Vs or more, preferably 1×10 -6 cm 2 A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can be used as long as they have a higher electron transporting property than holes. Note that the organic compound is preferably an organic compound having a π-electron-deficient heteroaromatic ring. The organic compound having a π-electron-deficient heteroaromatic ring is preferably one or more of, for example, an organic compound having a heteroaromatic ring with an azole skeleton, an organic compound having a heteroaromatic ring with a pyridine skeleton, an organic compound having a heteroaromatic ring with a diazine skeleton, and an organic compound having a heteroaromatic ring with a triazine skeleton.

[0210] The electron-transporting organic compound usable in the electron-transporting layer 114 may be the same as the organic compound in the light-emitting layer 113 and the organic compound described in Embodiment 1 as the second organic compound in the electron-injection layer 115. Among these, organic compounds containing a heteroaromatic ring with a diazine skeleton, an organic compound containing a heteroaromatic ring with a pyridine skeleton, or an organic compound containing a heteroaromatic ring with a triazine skeleton are preferred due to their excellent reliability. In particular, organic compounds containing a heteroaromatic ring with a diazine (pyrimidine or pyrazine) skeleton and an organic compound containing a heteroaromatic ring with a triazine skeleton have high electron transport properties and contribute to reduced driving voltage. Among these, organic compounds containing a phenanthroline skeleton, such as mTpPPhen, PnNPhen, and mPPhen2P, are preferred, with organic compounds containing a phenanthroline dimer structure, such as mPPhen2P, being more preferred due to their excellent stability.

[0211] The electron transport layer preferably contains an organic compound having an acid dissociation constant pKa of less than 4 and having electron transport properties.

[0212] The electron transport layer 114 may have a laminated structure. When the electron transport layer 114 has a laminated structure, a layer in contact with the light-emitting layer 113 may function as a hole-blocking layer. When the electron transport layer in contact with the light-emitting layer is made to function as a hole-blocking layer, it is preferable to use a material whose HOMO level is lower by 0.5 eV or more than the HOMO level of the material contained in the light-emitting layer.

[0213] The electron injection layer 115 is formed between the electron transport layer 114 and the second electrode 102. The structure of the electron injection layer 115 has been described in detail in Embodiment 1, and therefore, a repeated description will be omitted.

[0214] The second electrode 102 is preferably formed in contact with the electron injection layer 115. For example, a metal material can be used for the second electrode 102. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), magnesium (Mg), and the like, as well as alloys containing appropriate combinations of these metals, can also be used.

[0215] The second electrode 102 may be formed using an oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon. For example, it is preferable to use a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. Note that when the light-emitting device 130 is a top-emission light-emitting device, it is preferable to use a light-transmitting conductive metal oxide for the second electrode 102.

[0216] When the second electrode 102 is formed using a material that is transparent to visible light, a light-emitting device can be obtained that emits light from the second electrode 102 side, and when the first electrode 101 is formed using a material that is transparent to visible light, a light-emitting device can be obtained that emits light from the first electrode 101 side.

[0217] The conductive material constituting the second electrode 102 can be formed into a film by a dry method such as a vacuum deposition method or a sputtering method, an inkjet method, a spin coating method, etc. Alternatively, the second electrode 102 may be formed by a wet method using a sol-gel method, or may be formed by a wet method using a paste of a metal material.

[0218] In the case of a top-emission light-emitting device, the light extraction efficiency can be improved by forming a capping layer by evaporating an organic compound on the second electrode. The capping layer may have a single-layer structure or a multilayer structure. In the case of a multilayer structure, the light extraction efficiency can be further improved by using organic compounds with different refractive indices.

[0219] In addition, various methods, whether dry or wet, can be used to form the organic compound layer 103. For example, vacuum deposition, gravure printing, offset printing, screen printing, inkjet printing, spin coating, or the like may be used.

[0220] Furthermore, the above-mentioned electrodes or layers may be formed using different film formation methods.

[0221] 1B , a P-type layer 117 may be provided to protect the electron-injection layer 115 when a film to be the second electrode 102 is formed by a deposition method that significantly damages a base, such as a sputtering method. The P-type layer 117 can be formed using the composite material described above as a material that can be used for the hole-injection layer 111. Transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide are more robust than organic compounds, and therefore, by using them as a substance having acceptor properties to be used for the P-type layer, damage during the formation of the film to be the second electrode 102 can be prevented, which is preferable.

[0222] Although not shown, an electron relay layer may be provided between the electron injection layer 115 and the P-type layer 117. The electron relay layer contains at least a substance having electron transport properties and has the function of preventing interaction between the electron injection layer 115 and the P-type layer 117 and smoothly transferring electrons. The LUMO level of the substance having electron transport properties contained in the electron relay layer is preferably between the LUMO level of the acceptor substance in the P-type layer 117 and the LUMO level of the substance contained in the layer of the electron transport layer 114 that is in contact with the electron injection layer 115. The specific energy level of the LUMO level of the substance having electron transport properties used in the electron relay layer is −5.0 eV or higher, preferably −5.0 eV or higher and −3.0 eV or lower. The substance having electron transport properties used in the electron relay layer is preferably a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand. Specific examples of the substance having electron transport properties that can be used in the electron relay layer include diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA), 2,3,8,9,14,15-hexafluorodiquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA-F6), perylene tetracarboxylic acid derivatives such as 3,4,9,10-perylene tetracarboxylic diimide (abbreviation: PTCDI) and 3,4,9,10-perylene tetracarboxylic-bis-benzimidazole (abbreviation: PTCBI), (C60-Ih)[5,6]fullerene (abbreviation: C60), and (C70-D5h)[5,6]fullerene (abbreviation: C70). Furthermore, a compound having a heterophane skeleton, which is a cyclophane skeleton containing a heterocycle, can be used, and as such a compound, for example, a phthalocyanine compound such as phthalocyanine (abbreviation: H2Pc) can be used.Metal phthalocyanines containing copper, zinc, cobalt, iron, chromium, nickel, etc., such as copper phthalocyanine (abbreviated as CuPc), zinc phthalocyanine (abbreviated as ZnPc), cobalt phthalocyanine (abbreviated as CoPc), iron phthalocyanine (abbreviated as FePc), tin phthalocyanine (abbreviated as SnPc), tin oxide phthalocyanine (abbreviated as SnOPc), titanium oxide phthalocyanine (abbreviated as TiOPc), and vanadium oxide phthalocyanine (abbreviated as VOPc), and their derivatives can also be used. Phthalocyanine-based metal complexes, such as copper phthalocyanine or zinc phthalocyanine, or 2,3,8,9,14,15-hexafluorodiquinoxalino[2,3-a:2',3'-c]phenazine are particularly preferred.

[0223] The thickness of the electron relay layer is preferably 1 nm or more and 10 nm or less, more preferably 2 nm or more and 5 nm or less.

[0224] Next, an embodiment of a light-emitting device having a structure in which multiple light-emitting units are stacked (also referred to as a stacked device or a tandem device) will be described with reference to FIG. 1(C). This light-emitting device has multiple light-emitting units between an anode and a cathode. One light-emitting unit has a structure substantially similar to that of the organic compound layer 103 shown in FIG. 1(A). In other words, the light-emitting device shown in FIG. 1(C) is a light-emitting device having multiple light-emitting units, and the light-emitting device shown in FIG. 1(A) can be said to be a light-emitting device having one light-emitting unit.

[0225] In FIG. 1(C), a first light-emitting unit 511 and a second light-emitting unit 512 are stacked between a first electrode 501 and a second electrode 502, and an intermediate layer 513 is provided between the first light-emitting unit 511 and the second light-emitting unit 512. The first electrode 501 and the second electrode 502 correspond to the first electrode 101 and the second electrode 102 in FIG. 1(A), respectively, and the same materials as those described in the description of FIG. 1(A) can be applied to them. The layer structures of the first light-emitting unit 511 and the second light-emitting unit 512 may be the same or different. The materials constituting the layers of the first light-emitting unit 511 and the second light-emitting unit 512 may be the same or different.

[0226] The intermediate layer 513 has a function of injecting electrons into one light-emitting unit and injecting holes into the other light-emitting unit when a voltage is applied between the first electrode 501 and the second electrode 502. That is, in FIG. 1C, when a voltage is applied so that the potential of the anode is higher than the potential of the cathode, the intermediate layer 513 injects electrons into the first light-emitting unit 511 and injects holes into the second light-emitting unit 512.

[0227] Intermediate layer 513 includes a charge generation layer. The charge generation layer also includes at least a P-type layer 117. P-type layer 117 is preferably formed using the composite material listed above as a material that can be used to form hole injection layer 111. P-type layer 117 may also be formed by laminating a film containing an acceptor material and a film containing a hole transport material, both of which are materials that form the composite material. By applying a potential to P-type layer 117, electrons are injected into electron transport layer 114 and holes are injected into the cathode, causing the light-emitting device to operate.

[0228] In addition, it is preferable that the intermediate layer 513 includes, in addition to the P-type layer 117, either or both of an electron relay layer 118 and an N-type layer 119.

[0229] The electron relay layer 118 has the same configuration as the electron relay layer mentioned in the description of FIG. 1(B), and therefore a repeated description will be omitted.

[0230] The N-type layer 119 can be made of a material with high electron injection properties, such as alkali metals, alkaline earth metals, rare earth metals, and compounds thereof (alkali metal compounds (including oxides such as lithium oxide, halides, and carbonates such as lithium carbonate and cesium carbonate), alkaline earth metal compounds (including oxides, halides, and carbonates), or rare earth metal compounds (including oxides, halides, and carbonates)).

[0231] When the N-type layer 119 is formed containing a substance having an electron-transporting property and a donor substance, the donor substance can be an alkali metal, an alkaline earth metal, a rare earth metal, or a compound thereof (an alkali metal compound (including an oxide such as lithium oxide, a halide, or a carbonate such as lithium carbonate or cesium carbonate), an alkaline earth metal compound (including an oxide, a halide, or a carbonate), or a rare earth metal compound (including an oxide, a halide, or a carbonate)), or an organic compound such as tetrathianaphthacene (abbreviation: TTN), nickelocene, or decamethylnickelocene. Note that the substance having an electron-transporting property can be formed using the same material as the material for forming the electron-transporting layer 114 described above.

[0232] Alternatively, instead of N-type layer 119, a layer containing the metal described in Embodiment 1 as being used for the electron injection layer, a first organic compound, and a second organic compound may be formed at the same position as N-type layer 119. Even with this configuration, a tandem light-emitting device with excellent characteristics can be fabricated.

[0233] When the anode side surface of the light-emitting unit is in contact with the intermediate layer 513, the charge generation layer of the intermediate layer 513 can also function as the hole injection layer of the light-emitting unit, so the light-emitting unit does not need to be provided with a hole injection layer. When the cathode side surface of the light-emitting unit is in contact with the intermediate layer 513, the intermediate layer 513 can also function as the electron injection layer of the light-emitting unit, so the light-emitting unit does not need to be provided with an electron injection layer.

[0234] 1C illustrates a light-emitting device having two light-emitting units, but the present invention can be applied to a light-emitting device having three or more stacked light-emitting units. By disposing a plurality of light-emitting units between a pair of electrodes and separating them with an intermediate layer 513, as in the light-emitting device according to this embodiment, high-luminance light emission can be achieved while maintaining a low current density, and an element with a long life can be realized. Furthermore, a display device with low driving voltage and low power consumption can be realized.

[0235] Furthermore, by making each light-emitting unit emit a different light color, the light-emitting device as a whole can emit light of a desired color. For example, in a light-emitting device having two light-emitting units, it is possible to obtain a light-emitting device that emits white light as a whole by obtaining red and green light from the first light-emitting unit and blue light from the second light-emitting unit.

[0236] Each layer and electrode, such as the organic compound layer 103, the first light-emitting unit 511, the second light-emitting unit 512, and the intermediate layer 513, can be formed by, for example, an evaporation method (including a vacuum evaporation method), a droplet discharge method (also called an inkjet method), a coating method, a gravure printing method, etc. They may also contain a low-molecular-weight material, a medium-molecular-weight material (including an oligomer and a dendrimer), or a polymer material.

[0237] FIG. 5A shows two adjacent light-emitting devices (light-emitting device 130a and light-emitting device 130b) included in a display device of one embodiment of the present invention.

[0238] The light-emitting device 130a has an organic compound layer 103a between a first electrode 101a on an insulating layer 175 and an opposing second electrode 102a, and the organic compound layer 103a has an electron injection layer 115a. The organic compound layer 103a has a configuration including a hole injection layer 111a, a hole transport layer 112a, a light-emitting layer 113a, an electron transport layer 114a, and an electron injection layer 115a, but may have a different stacked structure.

[0239] The light-emitting device 130b has an organic compound layer 103b between a first electrode 101b on an insulating layer 175 and an opposing second electrode 102b, and the organic compound layer 103b has an electron injection layer 115b. The organic compound layer 103b has a configuration including a hole injection layer 111b, a hole transport layer 112b, a light-emitting layer 113b, an electron transport layer 114b, and an electron injection layer 115b, but may have a different stacked structure.

[0240] The configurations of the electron injection layer 115a and the second electrode 102a in the light-emitting device 130a, and the configurations of the electron injection layer 115b and the second electrode 102b in the light-emitting device 130b are preferably the same as those described in the first embodiment.

[0241] The organic compound layers 103a and 103b and the second electrodes 102a and 102b are independent from each other because they are processed by photolithography after the film to become the second electrode 102a and the film to become the second electrode 102b are formed. A light-emitting device according to one embodiment of the present invention can have good characteristics even when processed by photolithography after the film to become the second electrode 102a and the film to become the second electrode 102b are formed.

[0242] The edge (outline) of the second electrode 102a and the edge (outline) of the organic compound layer 103a are processed by photolithography, so they are roughly aligned in the vertical direction relative to the substrate. The edge (outline) of the second electrode 102b and the edge (outline) of the organic compound layer 103b are processed by photolithography, so they are roughly aligned in the vertical direction relative to the substrate.

[0243] Furthermore, since the organic compound layers 103a and 103b are processed by photolithography, a gap d exists between the organic compound layers 103a and 103b. Furthermore, since the organic compound layers are processed by photolithography, the distance between the first electrode 101a and the first electrode 101b can be made smaller than that when mask vapor deposition is performed, and can be set to 0.5 μm or more and 5 μm or less.

[0244] FIG. 5(B) shows two adjacent tandem light-emitting devices (light-emitting device 130c, light-emitting device 130d) fabricated by photolithography.

[0245] The light-emitting device 130c has an organic compound layer 103c between a first electrode 101c and a second electrode 102c on an insulating layer 175. The organic compound layer 103c has a structure in which a first light-emitting unit 501c and a second light-emitting unit 502c are stacked with an intermediate layer 116c sandwiched therebetween. Note that although an example in which two light-emitting units are stacked is shown in FIG. 5B, a structure in which three or more light-emitting units are stacked may also be used. 5(B), the first light-emitting unit 501c includes a hole injection layer 111c, a first hole transport layer 112c_1, a first light-emitting layer 113c_1, and a first electron transport layer 114c_1, the intermediate layer 116c includes a P-type layer 117c, an electron relay layer 118c, and an N-type layer 119c, and the second light-emitting unit 502c includes a second hole transport layer 112c_2, a second light-emitting layer 113c_2, a second electron transport layer 114c_2, and an electron injection layer 115c. The electron relay layer 118c may or may not be present.

[0246] The light-emitting device 130d has an organic compound layer 103d between a first electrode 101d and a second electrode 102d on an insulating layer 175. The organic compound layer 103d has a structure in which a first light-emitting unit 501d and a second light-emitting unit 502d are stacked with an intermediate layer 116d sandwiched therebetween. Note that although an example in which two light-emitting units are stacked is shown in FIG. 5B, a structure in which three or more light-emitting units are stacked may also be used. 5(B), the first light-emitting unit 501d includes a hole injection layer 111d, a first hole transport layer 112d_1, a first light-emitting layer 113d_1, and a first electron transport layer 114d_1, the intermediate layer 116d includes a P-type layer 117d, an electron relay layer 118d, and an N-type layer 119d, and the second light-emitting unit 502d includes a second hole transport layer 112d_2, a second light-emitting layer 113d_2, a second electron transport layer 114d_2, and an electron injection layer 115d. The electron relay layer 118d is optional.

[0247] In light-emitting devices 130c and 130d, electron injection layer 115c, electron injection layer 115d, and second electrode 102c, second electrode 102d preferably have the configurations described in Embodiment 1. Furthermore, N-type layer 119c in intermediate layer 116c and N-type layer 119d in intermediate layer 116d preferably have the configuration of the electron injection layer described in Embodiment 1.

[0248] The organic compound layer 103c and the organic compound layer 103d are independent from each other because they are processed by photolithography after the film to be the second electrode 102c and the film to be the second electrode 102d are formed, respectively. A light-emitting device according to one embodiment of the present invention can have good characteristics even when processed by photolithography after the film to be the second electrode 102c and the film to be the second electrode 102d are formed, respectively.

[0249] The edges (outlines) of the second electrode 102c and the organic compound layer 103c are processed by photolithography, so they are roughly aligned in the vertical direction relative to the substrate. The edges (outlines) of the second electrode 102d and the organic compound layer 103d are processed by photolithography, so they are roughly aligned in the vertical direction relative to the substrate.

[0250] Furthermore, since the organic compound layer 103c is processed by photolithography, a gap d exists between the organic compound layer 103c and the organic compound layer 103d. Furthermore, since the organic compound layer is processed by photolithography, the distance between the first electrode 101c and the first electrode 101d can be made smaller than that when mask vapor deposition is performed, and can be set to 0.5 μm or more and 5 μm or less.

[0251] Since the second electrodes 102a and 102b, or the second electrodes 102c and 102d, are independent of each other, it is preferable to form an auxiliary electrode 105 to apply a voltage to the multiple second electrodes included in the display device. The auxiliary electrode 105 is preferably formed after forming an insulating layer 106 between the light-emitting devices 130a and 130b or between the light-emitting devices 130c and 130d to prevent short circuits between adjacent organic compound layers or adjacent first electrodes. The insulating layer 106 is preferably formed using an organic insulating material. The auxiliary electrode 105 can be made of a material that can be used for a second electrode.

[0252] In the light-emitting device of one embodiment of the present invention, the organic compound layer is processed by photolithography, and therefore, the light-emitting device can be processed with sufficient precision to fabricate a high-resolution display device. Furthermore, since the lithography process can be performed on the electron injection layer far from the light-emitting layer without contamination by alkali metals, the light-emitting device can have excellent characteristics. As described above, the light-emitting device of one embodiment of the present invention having such a structure can realize a high-resolution display device and can have excellent characteristics.

[0253] In a light-emitting device according to one embodiment of the present invention, the second electrode and the organic compound layer are processed simultaneously by photolithography after the formation of the second electrode. Therefore, when viewed from a direction substantially perpendicular to the surface of the insulating layer on which the first electrode is formed, the contours of the layers included in the organic compound layer substantially coincide with each other. Furthermore, the end of the cross section of the second electrode and the end of the cross section of the first layer are aligned in a direction substantially perpendicular to the surface of the insulating layer on which the first electrode is formed. In this specification, "aligned" and "substantially coincident" mean that, in contacting layers A and B, the deviation between the contour A of layer A and the contour B of layer B is within 5% of the width of the organic compound layer on a line perpendicular to the contours of the compared portions. Furthermore, "substantially perpendicular" means an angle of 85° to 95°.

[0254] The structure of this embodiment mode can be used in appropriate combination with other structures.

[0255] (Embodiment 3) In this embodiment, a mode in which a light-emitting device of one embodiment of the present invention is used as a display element of a display device will be described.

[0256] As shown in FIGS. 6(A) and 6(B), a plurality of light-emitting devices 130 are formed on an insulating layer 175 to form a display device.

[0257] The display device has a pixel section 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 has a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0258] In this specification and the like, when describing matters common to, for example, the subpixels 110R, 110G, and 110B, they may be referred to as the subpixels 110. When describing matters common to other components distinguished by alphabets, they may also be described using symbols without the alphabets.

[0259] The sub-pixel 110R emits red light, the sub-pixel 110G emits green light, and the sub-pixel 110B emits blue light. This allows a full-color image to be displayed in the pixel section 177. In this embodiment, sub-pixels of three colors, red (R), green (G), and blue (B), are described as an example, but combinations of sub-pixels of other colors may also be used. The number of sub-pixels is not limited to three, and may be four or more. Examples of four sub-pixels include sub-pixels of four colors: R, G, B, and white (W); sub-pixels of four colors: R, G, B, and yellow (Y); and sub-pixels of R, G, B, and infrared (IR).

[0260] In this specification, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly.

[0261] 6A shows an example in which sub-pixels of different colors are arranged side by side in the X direction, and sub-pixels of the same color are arranged side by side in the Y direction. Note that sub-pixels of different colors may also be arranged side by side in the Y direction, and sub-pixels of the same color may also be arranged side by side in the X direction.

[0262] The layout of the sub-pixels is not limited to this, and various other arrangements are possible, such as a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, a pentile arrangement, etc. Fig. 7 shows an example of a layout of the sub-pixels.

[0263] An S-stripe arrangement is applied to the pixel 178 shown in Fig. 7(A). The pixel 178 shown in Fig. 7(A) is composed of three subpixels: a subpixel 110R, a subpixel 110G, and a subpixel 110B.

[0264] The pixel 178 shown in FIG. 7B includes a subpixel 110R having a generally trapezoidal or triangular top surface shape with rounded corners, a subpixel 110G having a generally trapezoidal or triangular top surface shape with rounded corners, and a subpixel 110B having a generally rectangular or hexagonal top surface shape with rounded corners. The subpixel 110R has a larger light-emitting area than the subpixel 110G. Thus, the shape and size of each subpixel can be determined independently. For example, the more reliable the light-emitting device, the smaller the size of the subpixel.

[0265] The Pentile arrangement is applied to the pixels 124a and 124b shown in Fig. 7(C). Fig. 7(C) shows an example in which the pixel 124a having the subpixel 110R and the subpixel 110G and the pixel 124b having the subpixel 110G and the subpixel 110B are arranged alternately.

[0266] 7(D) to 7(F) are arranged in a delta configuration. Pixel 124a has two subpixels (subpixel 110R and subpixel 110G) in the top row (first row) and one subpixel (subpixel 110B) in the bottom row (second row). Pixel 124b has one subpixel (subpixel 110B) in the top row (first row) and two subpixels (subpixel 110R and subpixel 110G) in the bottom row (second row).

[0267] Figure 7(D) is an example in which each sub-pixel has an approximately rectangular top surface shape with rounded corners, Figure 7(E) is an example in which each sub-pixel has a circular top surface shape, and Figure 7(F) is an example in which each sub-pixel has an approximately hexagonal top surface shape with rounded corners.

[0268] In Fig. 7(F), each subpixel is arranged inside a densely arranged hexagonal region. Each subpixel is arranged so that it is surrounded by six other subpixels when focusing on one subpixel. Furthermore, subpixels that emit light of the same color are arranged so that they are not adjacent to each other. For example, when focusing on subpixel 110R, three subpixels 110G and three subpixels 110B are arranged alternately so as to surround it.

[0269] 7G shows an example in which subpixels of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper sides of two subpixels aligned in the row direction (for example, subpixels 110R and 110G, or subpixels 110G and 110B) are misaligned.

[0270] 7(A) to 7(G), it is preferable that the subpixel 110R is the subpixel R that emits red light, the subpixel 110G is the subpixel G that emits green light, and the subpixel 110B is the subpixel B that emits blue light. Note that the configuration of the subpixels is not limited to this, and the colors that the subpixels emit and their arrangement order can be determined appropriately. For example, the subpixel 110G may be the subpixel R that emits red light, and the subpixel 110R may be the subpixel G that emits green light.

[0271] In the case of a so-called stripe arrangement as shown in Figures 6(A) and 7(G), the second electrodes 102 of light-emitting devices that emit the same light color can be formed continuously. In this case, even if processing is performed by photolithography after forming the second electrodes 102, voltage can be applied to each light-emitting device without the auxiliary electrodes 105. If processing by photolithography results in a configuration in which the second electrodes 102 are independent for each light-emitting device, it is preferable to form the auxiliary electrodes 105.

[0272] A connection portion 140 may be provided outside the pixel portion 177, and a region 141 may be provided. The region 141 is provided between the pixel portion 177 and the connection portion 140. The region 141 is provided with an organic compound layer 103. Furthermore, the connection portion 140 is provided with a conductive layer 151C.

[0273] 6(A) shows an example in which the region 141 and the connection portion 140 are located on the right side of the pixel portion 177, but the positions of the region 141 and the connection portion 140 are not particularly limited. The region 141 and the connection portion 140 may be singular or plural.

[0274] Fig. 6(B) is an example of a cross-sectional view taken along dashed line A1-A2 in Fig. 6(A). As shown in Fig. 6(B), the display device has an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and on the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 is provided on a substrate (not shown). The insulating layer 175, the insulating layer 174, and the insulating layer 173 have openings that reach the conductive layer 172, and a plug 176 is provided to fill the opening.

[0275] In the pixel section 177, the light-emitting device 130 is provided on the insulating layer 175 and the plug 176. A protective layer 131 is provided to cover the light-emitting device 130. The substrate 120 is bonded to the protective layer 131 by a resin layer 122. Preferably, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided between adjacent light-emitting devices 130.

[0276] The insulating layer 127 can be made of acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, precursors of these resins, etc. Alternatively, the insulating layer 127 can be made of organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin.

[0277] Furthermore, a photosensitive resin can be used for the insulating layer 127. A photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0278] The insulating layer 127 may contain a material that absorbs visible light. For example, the insulating layer 127 itself may be made of a material that absorbs visible light, or the insulating layer 127 may contain a pigment that absorbs visible light. For example, the insulating layer 127 may be made of a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix.

[0279] 6B shows multiple cross sections of the inorganic insulating layer 125 and the insulating layer 127, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are connected to one another when the display device is viewed from above. That is, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are insulating layers having openings over the first electrodes.

[0280] 6(B) shows light emitting device 130R, light emitting device 130G, and light emitting device 130B. Light emitting device 130R, light emitting device 130G, and light emitting device 130B emit light of different colors. For example, light emitting device 130R can emit red light, light emitting device 130G can emit green light, and light emitting device 130B can emit blue light. Light emitting device 130R, light emitting device 130G, or light emitting device 130B may also emit other visible light or infrared light.

[0281] The display device of one embodiment of the present invention can be, for example, a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting device is formed. Note that the display device of one embodiment of the present invention may also be a bottom-emission type.

[0282] The light-emitting device 130R has the configuration as described in Embodiments 1 and 2. It has a first electrode 101R (pixel electrode) composed of a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R on the first electrode 101R, and a second electrode 102R on the organic compound layer 103R. The electron injection layer, which is the outermost layer of the organic compound layer 103R, and the second electrode 102R have the configurations as described in Embodiments 1 and 2. This configuration can suppress damage to the light-emitting layer during the photolithography process, and can provide a light-emitting device 130R with good film quality and electrical characteristics.

[0283] The light-emitting device 130G has the configuration described in Embodiments 1 and 2. It includes a first electrode 101G (pixel electrode) composed of a conductive layer 151G and a conductive layer 152G, an organic compound layer 103G on the first electrode 101G, and a second electrode 102G on the organic compound layer 103G. The electron injection layer, which is the outermost layer of the organic compound layer 103G, and the second electrode 102G have the configurations described in Embodiments 1 and 2. This configuration can reduce damage to the light-emitting layer during the photolithography process, and can provide a light-emitting device 130G with good film quality and electrical characteristics.

[0284] The light-emitting device 130B has the configuration described in Embodiments 1 and 2. It has a first electrode 101B (pixel electrode) composed of a conductive layer 151B and a conductive layer 152B, an organic compound layer 103B on the first electrode 101B, and a second electrode 102B on the organic compound layer 103B. The electron injection layer, which is the outermost layer of the organic compound layer 103B, and the second electrode 102B have the configurations described in Embodiments 1 and 2. This configuration can suppress damage to the light-emitting layer during the photolithography process, and can provide a light-emitting device 130B with good film quality and electrical characteristics.

[0285] The organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are independent island-like layers for each light-emitting device or for each emitted color. It is preferable that the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B do not overlap with each other. By providing the organic compound layer 103 in an island-like shape for each light-emitting device 130, leakage current between adjacent light-emitting devices 130 can be suppressed even in a high-resolution display device. This prevents crosstalk, enabling a display device with extremely high contrast to be realized. In particular, a display device with high current efficiency at low brightness can be realized.

[0286] The second electrodes 102R, 102G, and 102B are isolated in an island shape for each light-emitting device or for each row of the same emitted light color. It is preferable that the second electrodes 102R, 102G, and 102B do not overlap with each other.

[0287] It is preferable to form an auxiliary electrode 105 on the second electrode 102 after forming an insulating layer 127 covering the side surface of the light-emitting device 130, because this makes it easier to supply a voltage to the second electrode 102. The auxiliary electrode 105 may be made of, for example, a metal material. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), magnesium (Mg), and the like, as well as alloys containing appropriate combinations of these metals, may also be used.

[0288] The auxiliary electrode 105 may be formed of an oxide containing one or more selected from the group consisting of indium, tin, zinc, gallium, titanium, aluminum, and silicon. For example, it is preferable to use a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. When the light-emitting device 130 is a top-emission light-emitting device, it is preferable to use a light-transmitting conductive metal oxide as the auxiliary electrode 105.

[0289] The island-shaped organic compound layer 103 is formed by forming an organic compound film, forming a film to be the second electrode 102, and processing the organic compound film and the film to be the second electrode 102 by photolithography. In the light-emitting device of one embodiment of the present invention, the electron-injection layer and the second electrode have the structures described in Embodiment 1. Therefore, even if the film to be the second electrode 102 is formed and then processed by photolithography, the light-emitting device can have favorable characteristics in which an increase in driving voltage is suppressed. Furthermore, by forming the film to be the second electrode 102 and then processing it by photolithography, an inexpensive and reliable light-emitting device can be obtained.

[0290] In the display device of one embodiment of the present invention, the first electrode 101 (pixel electrode) of the light-emitting device preferably has a stacked structure. For example, in the example shown in FIG. 6B , the first electrode 101 of the light-emitting device 130 has a stacked structure of a conductive layer 151 provided on the insulating layer 171 side and a conductive layer 152 provided on the organic compound layer side. Note that in this specification and the like, when matters common to the conductive layer 151R, the conductive layer 151G, and the conductive layer 151B are described, they may be referred to as the conductive layer 151. In this specification and the like, when matters common to the conductive layer 152R, the conductive layer 152G, and the conductive layer 152B are described, they may be referred to as the conductive layer 152.

[0291] For example, a metal material can be used for the conductive layer 151. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), etc., and alloys containing appropriate combinations of these metals can also be used.

[0292] The conductive layer 152 can be formed using an oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon. For example, it is preferable to use a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, indium tin oxide containing silicon has a large work function, for example, a work function of 4.0 eV or more, and therefore can be suitably used for the conductive layer 152.

[0293] The conductive layer 151 may have a stacked structure of multiple layers containing different materials, and the conductive layer 152 may have a stacked structure of multiple layers containing different materials. In this case, the conductive layer 151 may include a layer containing a material that can be used for the conductive layer 152, such as a conductive oxide, or the conductive layer 152 may include a layer containing a material that can be used for the conductive layer 151, such as a metal material. For example, when the conductive layer 151 has a stacked structure of two or more layers, a layer in contact with the conductive layer 152 can be a layer containing a material that can be used for the conductive layer 152.

[0294] 6B, the edge of the conductive layer 151 has a tapered shape. Specifically, the edge of the conductive layer 151 preferably has a tapered shape with a taper angle of less than 90°. In this case, the conductive layer 152 provided along the side surface of the conductive layer 151 also has a tapered shape. By tapering the side surface of the conductive layer 152, the coverage of the organic compound layer 103 provided along the side surface of the conductive layer 152 can be improved.

[0295] The ends of the conductive layers 151 and 152 may not be tapered, that is, may be substantially vertical. Preferably, the ends of the organic compound layer 103 are located inside the first electrode 101. In this case, leakage current through the organic compound layer 103 can be reduced, and a display device with low driving voltage and excellent display performance can be obtained.

[0296] The display device of one embodiment of the present invention can be a highly reliable display device because the light-emitting device 130 has the structure described in Embodiments 1 and 2.

[0297] Next, an example of a method for manufacturing a display device having the structure shown in FIG. 6A will be described with reference to FIGS.

[0298] [Example of manufacturing method] The thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, a pulsed laser deposition (PLD) method, an atomic layer deposition (ALD) method, or the like.

[0299] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by wet film formation methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0300] Furthermore, when processing the thin films that constitute the display device, they can be processed using, for example, photolithography.

[0301] In photolithography, the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, and ArF laser light. Exposure may also be performed using immersion exposure techniques. Extreme ultraviolet (EUV) light or X-rays may also be used as light for exposure. An electron beam may also be used instead of light for exposure.

[0302] The thin film can be etched by dry etching, wet etching, sandblasting, or the like.

[0303] 8(A), an insulating layer 171 is formed on a substrate (not shown). Subsequently, conductive layers 172 and 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layers 172 and 179. Subsequently, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0304] The substrate may be a substrate having heat resistance at least sufficient to withstand subsequent heat treatment, such as a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate made of silicon germanium, or an SOI substrate.

[0305] 8A, openings are formed in the insulating layers 175, 174, and 173, reaching the conductive layer 172. Then, plugs 176 are formed to fill the openings.

[0306] 8A, a conductive film 151f, which will later become the conductive layers 151R, 151G, 151B, and 151C, and a conductive film 152f, which will later become the conductive layers 152R, 152G, 152B, and 152C, are formed on the plug 176 and the insulating layer 175. The conductive film 151f can be formed of, for example, a metal material. The conductive film 152f can be formed of, for example, an oxide containing one or more elements selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon.

[0307] 8A, a resist mask 191 is formed over the conductive film 152f. The resist mask 191 can be formed by applying a photosensitive material (photoresist), exposing it to light, and developing it.

[0308] 8B, for example, the conductive film 151f and the conductive film 152f are removed from regions that do not overlap with the resist mask 191. As a result, the conductive layer 151 and the conductive layer 152 are formed.

[0309] 8(C), the resist mask 191 is removed. The resist mask 191 can be removed by ashing using oxygen plasma, for example.

[0310] 8(D), an insulating film 156f, which will later become insulating layers 156R, 156G, 156B, and 156C, is formed on conductive layers 152R, 152G, 152B, and 152C, and on insulating layer 175. In this specification and the like, when describing matters common to insulating layer 156R, insulating layer 156G, and insulating layer 156B, they may be referred to as insulating layer 156.

[0311] The insulating film 156f can be an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, or an insulating nitride oxide film, for example, a silicon oxynitride film.

[0312] Subsequently, as shown in FIG. 8(E), the insulating film 156f is processed to form insulating layers 156R, 156G, 156B, and 156C.

[0313] 9(A), the organic compound film 103Rf is formed on the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the insulating layer 175. Note that, as shown in FIG. 9(A), the organic compound film 103Rf is not formed on the conductive layer 152C.

[0314] Next, as shown in FIG. 9(A), a conductive film 102Rf serving as a second electrode is formed on the organic compound film 103Rf, and then a sacrificial film 158Rf and a mask film 159Rf are formed on the conductive film 102Rf. Forming the sacrificial film 158Rf and the mask film 159Rf on the organic compound film 103Rf via the conductive film 102Rf reduces damage to the organic compound film 103Rf during the manufacturing process of the display device, thereby improving the reliability of the light-emitting device. Note that in this specification, the sacrificial film may also be referred to as a mask film. Similarly, the sacrificial layer may also be referred to as a mask layer.

[0315] When the second electrode 102 is an electrode from which light is extracted, the conductive film 102Rf is preferably made of a material that is transparent to visible light. For example, the reflectance of visible light is 20% or more and 80% or less, preferably 40% or more and 70% or less, and the resistivity is 1×10 -2 Examples of such a conductive material include a material with a resistivity of Ω·cm or less. When a material with low light transmittance, such as a metal or alloy, is used for the conductive film 102Rf, it may be formed to a thickness that allows visible light to pass through (for example, a thickness of 1 nm to 10 nm). Specifically, in addition to an oxide conductor layer typified by ITO, it includes an oxide semiconductor layer or an organic conductor layer containing an organic substance. Examples of organic conductor layers containing an organic substance include a layer containing a composite material obtained by mixing an organic compound and an electron donor (donor), and a layer containing a composite material obtained by mixing an organic compound and an electron acceptor (acceptor). The resistivity of the transparent conductive layer is preferably 1×10 5Ω·cm or less, more preferably 1×10 4 Ω·cm or less.

[0316] The conductive film 102Rf can be formed by a dry method such as vacuum deposition or sputtering, an inkjet method, a spin coating method, or the like. Alternatively, the conductive film 102Rf may be formed by a wet method using a sol-gel method, or by a wet method using a metal material paste. In particular, the conductive film 102Rf formed on and in contact with the organic compound film 103Rf is preferably formed by a method that causes less damage to the organic compound film 103Rf. For example, the ALD method (Atomic Layer Deposition method) or the vacuum deposition method is preferable.

[0317] The sacrificial film 158Rf and the mask film 159Rf are provided as needed. For example, if the conductive film 102Rf can sufficiently protect the organic compound film 103Rf, the mask film 159Rf can be formed on the conductive film 102Rf, thereby eliminating the step of forming the sacrificial film 158Rf. Furthermore, if the etching selectivity between the organic compound film 103Rf and the conductive film 102Rf and between the conductive film 102Rf and the sacrificial film 158Rf are both sufficiently large, the sacrificial film 158Rf can be used as a mask, and the step of forming the mask film 159Rf may be omitted.

[0318] The sacrificial film 158Rf is made of a film that is highly resistant to the processing conditions of the organic compound film 103Rf, specifically, a film that has a large etching selectivity with respect to the organic compound film 103Rf.The mask film 159Rf is made of a film that has a large etching selectivity with respect to the sacrificial film 158Rf.

[0319] The conductive film 102Rf, the sacrificial film 158Rf, and the mask film 159Rf are preferably formed at a temperature lower than the heat resistance temperature of the organic compound film 103Rf. The substrate temperature during the formation of the sacrificial film 158Rf and the mask film 159Rf is typically 100° C. to 200° C., preferably 100° C. to 150° C., and more preferably 100° C. to 120° C. The light-emitting device of one embodiment of the present invention includes the first compound, and therefore can provide a display device with good display quality even after a heating step at a higher temperature.

[0320] It is preferable to use films that can be removed by wet etching or dry etching for the sacrificial film 158Rf and the mask film 159Rf.

[0321] It is preferable that the sacrificial film 158Rf has a denser film quality than the mask film 159Rf.For example, the ALD method (Atomic Layer Deposition method) or the vacuum evaporation method is more preferable than the sputtering method.

[0322] The sacrificial film 158Rf and the mask film 159Rf may each be made of one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, an inorganic insulating film, or the like.

[0323] The sacrificial film 158Rf and the mask film 159Rf can be made of metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metal materials. It is particularly preferable to use a low-melting-point material such as aluminum or silver. Using a metal material capable of blocking ultraviolet rays for one or both of the sacrificial film 158Rf and the mask film 159Rf is preferable because it can prevent the organic compound film 103Rf from being irradiated with ultraviolet rays during pattern exposure, thereby suppressing deterioration of the organic compound film 103Rf.

[0324] Furthermore, for the sacrificial film 158Rf and the mask film 159Rf, metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), and indium tin oxide containing silicon can be used, respectively.

[0325] In addition, in the above metal oxide, an element M (wherein M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used instead of gallium.

[0326] The sacrificial film 158Rf and the mask film 159Rf are preferably made of a semiconductor material such as silicon or germanium, which has a high affinity with the semiconductor manufacturing process, or a compound containing the semiconductor material.

[0327] Moreover, various inorganic insulating films can be used for the sacrificial film 158Rf and the mask film 159Rf, respectively. In particular, an oxide insulating film is preferable because it has higher adhesion to the organic compound film 103Rf than a nitride insulating film.

[0328] 9(A), a resist mask 190R is formed. The resist mask 190R can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.

[0329] The resist mask 190R is provided in a position overlapping with the conductive layer 152R. The resist mask 190R is preferably provided also in a position overlapping with the conductive layer 152C, which can prevent the conductive layer 152C from being damaged during the manufacturing process of the display device.

[0330] 9(B), a resist mask 190R is used to remove part of the mask film 159Rf to form a mask layer 159R. The mask layer 159R remains on the conductive layer 152R and the conductive layer 152C. The resist mask 190R is then removed. The mask layer 159R is used as a mask (also referred to as a hard mask) to remove part of the sacrificial film 158Rf and the conductive film 102Rf to form a sacrificial layer 158R and a second electrode 102R.

[0331] By using the wet etching method, damage to the organic compound film 103Rf can be reduced when processing the conductive film 102Rf, the sacrificial film 158Rf, and the mask film 159Rf compared to when using the dry etching method. When using the wet etching method, it is preferable to use an acid aqueous solution such as a developer, an alkaline aqueous solution such as a tetramethylammonium hydroxide (TMAH) aqueous solution, or a chemical solution using dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture of these.

[0332] Furthermore, when dry etching is used to process the sacrificial film 158Rf and the conductive film 102Rf, deterioration of the organic compound film 103Rf can be suppressed by not using a gas containing oxygen as the etching gas.

[0333] The resist mask 190R can be removed in the same manner as the resist mask 191.

[0334] 9(B), the organic compound film 103Rf is processed to form the organic compound layer 103R. For example, using the mask layer 159R and the sacrificial layer 158R as a hard mask, a part of the conductive film 102Rf and a part of the organic compound film 103Rf are removed to form the organic compound layer 103R.

[0335] 9B, a stacked structure of the organic compound layer 103R, the second electrode 102R, the sacrificial layer 158R, and the mask layer 159R remains on the conductive layer 152R. Also, the conductive layers 152G and 152B are exposed.

[0336] The organic compound film 103Rf is preferably processed by anisotropic etching, particularly anisotropic dry etching, or wet etching may be used.

[0337] When dry etching is used, deterioration of the organic compound film 103Rf can be suppressed by not using an oxygen-containing gas as the etching gas.

[0338] Alternatively, an etching gas containing oxygen may be used. The etching rate can be increased by using an etching gas containing oxygen. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate. This can reduce damage to the organic compound film 103Rf. Furthermore, problems such as adhesion of reaction products generated during etching can be reduced.

[0339] When dry etching is used, it is preferable to use a gas containing one or more of H, CF, C, F, SF, CHF, Cl, H, O, BCl, or Group 18 elements such as He and Ar as the etching gas. Alternatively, it is preferable to use a gas containing one or more of these elements and oxygen as the etching gas. Alternatively, oxygen gas may be used as the etching gas.

[0340] Subsequently, as shown in FIG. 10A, an organic compound film 103Gf, which will later become the organic compound layer 103G, and a conductive film 102Gf, which will later become the second electrode 102G, are formed.

[0341] The organic compound film 103Gf can be formed by a method similar to that used to form the organic compound film 103Rf. The organic compound film 103Gf can have the same structure as the organic compound film 103Rf. The conductive film 102Gf can be formed by a method similar to that used to form the conductive film 102Rf. The conductive film 102Gf can have the same structure as the conductive film 102Rf.

[0342] Next, as shown in FIG. 10A, a sacrificial film 158Gf and a mask film 159Gf are formed in this order. Then, a resist mask 190G is formed. The materials and forming methods of the sacrificial film 158Gf and the mask film 159Gf are the same as those applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and forming methods of the resist mask 190G are the same as those applicable to the resist mask 190R.

[0343] The resist mask 190G is provided in a position overlapping with the conductive layer 152G.

[0344] 10(B), a resist mask 190G is used to remove a portion of the mask film 159Gf to form a mask layer 159G. The mask layer 159G remains on the conductive layer 152G. The resist mask 190G is then removed. Next, using the mask layer 159G as a mask, a portion of the sacrificial film 158Gf and a portion of the conductive film 102Gf are removed to form a sacrificial layer 158G and a second electrode 102G. Next, the organic compound film 103Gf is processed to form an organic compound layer 103G.

[0345] Subsequently, as shown in FIG. 10C, an organic compound film 103Bf, which will later become the organic compound layer 103B, and a conductive film 102Bf, which will later become the second electrode 102B, are formed.

[0346] The organic compound film 103Bf can be formed by a method similar to that used to form the organic compound film 103Rf. The organic compound film 103Bf can have the same structure as the organic compound film 103Rf. The conductive film 102Bf can be formed by a method similar to that used to form the conductive film 102Rf. The conductive film 102Bf can have the same structure as the conductive film 102Rf.

[0347] 10(C), a sacrificial film 158Bf and a mask film 159Bf are formed in this order. Then, a resist mask 190B is formed. The materials and forming methods of the sacrificial film 158Bf and the mask film 159Bf are the same as those applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and forming methods of the resist mask 190B are the same as those applicable to the resist mask 190R.

[0348] The resist mask 190B is provided in a position overlapping with the conductive layer 152B.

[0349] 10(D), a resist mask 190B is used to remove a portion of the mask film 159Bf to form a mask layer 159B. The mask layer 159B remains on the conductive layer 152B. The resist mask 190B is then removed. Using the mask layer 159B as a mask, a portion of the sacrificial film 158Bf and a portion of the conductive film 102Bf are removed to form the sacrificial layer 158B and the second electrode 102B. The organic compound film 103Bf is then processed to form the organic compound layer 103B. For example, using the mask layer 159B and the sacrificial layer 158B as a hard mask, a portion of the organic compound film 103Bf is removed to form the organic compound layer 103B.

[0350] 10D, a stacked structure of the organic compound layer 103B, the second electrode 102B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B, and the mask layers 159R and 159G are exposed.

[0351] Note that the side surfaces of the stacked structure of the organic compound layer 103R and the second electrode 102R, the stacked structure of the organic compound layer 103G and the second electrode 102G, and the stacked structure of the organic compound layer 103B and the second electrode 102B are preferably perpendicular or approximately perpendicular to the surface on which the layers are to be formed. For example, the angle formed between the surface on which the layers are to be formed and these side surfaces is preferably 60 degrees or more and 90 degrees or less.

[0352] As described above, the distance between adjacent layers among the stacked structures of the organic compound layer 103R and the second electrode 102R, the stacked structure of the organic compound layer 103G and the second electrode 102G, and the stacked structure of the organic compound layer 103B and the second electrode 102B formed using a photolithography method can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, the distance can be defined, for example, as the distance between adjacent opposing ends of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. By narrowing the distance between the island-shaped organic compound layers in this way, a display device with high definition and a large aperture ratio can be provided. Furthermore, the distance between the first electrodes of adjacent light-emitting devices can also be narrowed, for example, to 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, or 2 μm or less. The distance between the first electrodes of adjacent light-emitting devices is preferably 2 μm or more and 5 μm or less.

[0353] Subsequently, as shown in FIG. 11(A), it is preferable to remove the mask layer 159R, the mask layer 159G, the mask layer 159B, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B.

[0354] When the light-emitting devices are arranged in a stripe pattern as shown in FIG. 7(G), the second electrodes 102 of the light-emitting devices emitting the same light can be formed as a continuous layer. In this case, the auxiliary electrode 105 (described later) need not be formed. Therefore, in the case of bottom emission, the mask layer 159 does not need to be removed, and the process can proceed to the process shown in FIG. 13(B) after the process shown in FIG. 10(D). In the case of top emission, if the sacrificial layer 158 and the mask layer 159 are light-transmitting, they do not need to be removed, and the process can proceed to the process shown in FIG. 13(B) after the process shown in FIG. 10(D). If they are not light-transmitting, it is preferable to remove the sacrificial layer 158 and the mask layer 159. After removing the sacrificial layer 158 and / or the mask layer 159 (after the process shown in FIG. 11(A)), the process can proceed to the process shown in FIG. 13(B).

[0355] The mask layer removal process can be performed using the same method as the mask film processing process. In particular, by using a wet etching method, damage to the organic compound layer 103 during the mask layer removal can be reduced compared to when a dry etching method is used.

[0356] The mask layer may also be removed by dissolving it in a polar solvent such as water or alcohol, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0357] After removing the mask layer, a drying treatment may be performed to remove water adsorbed on the surface. For example, a heat treatment can be performed in an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 120°C or lower. A reduced pressure atmosphere is preferred because it allows drying at a lower temperature.

[0358] Subsequently, as shown in FIG. 11(B), an inorganic insulating film 125f is formed.

[0359] Subsequently, as shown in FIG. 11(C), an insulating film 127f, which will later become the insulating layer 127, is formed on the inorganic insulating film 125f.

[0360] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower, respectively.

[0361] As the inorganic insulating film 125f, it is preferable to form an insulating film having a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less within the above substrate temperature range.

[0362] The inorganic insulating film 125f is preferably formed by, for example, the ALD method. The ALD method is preferable because it can reduce film formation damage and also allows for the formation of a film with high coverage. The inorganic insulating film 125f is preferably formed as an aluminum oxide film by, for example, the ALD method.

[0363] The insulating film 127f is preferably formed by the wet film formation method described above. The insulating film 127f is preferably formed by, for example, spin coating using a photosensitive material, more specifically, using a photosensitive resin composition containing an acrylic resin.

[0364] Subsequently, exposure is performed to expose a part of the insulating film 127f to visible light or ultraviolet light. The insulating layer 127 is formed in a region sandwiched between any two of the conductive layers 152R, 152G, and 152B, and around the conductive layer 152C.

[0365] The exposed region of the insulating film 127f can control the width of the insulating layer 127 to be formed later. In this embodiment, the insulating layer 127 is processed so as to have a portion overlapping the upper surface of the conductive layer 151.

[0366] The light used for exposure preferably contains i-line (wavelength 365 nm), and may contain at least one of g-line (wavelength 436 nm) and h-line (wavelength 405 nm).

[0367] Subsequently, as shown in FIG. 12(A), development is carried out to remove the exposed area of ​​the insulating film 127f, thereby forming an insulating layer 127a.

[0368] 12(B), an etching process is performed using the insulating layer 127a as a mask to remove a portion of the inorganic insulating film 125f. As a result, the inorganic insulating layer 125 is formed below the insulating layer 127a. Note that, hereinafter, the etching process using the insulating layer 127a as a mask may be referred to as a first etching process.

[0369] The first etching process can be performed by dry etching or wet etching.

[0370] When dry etching is performed, it is preferable to use a chlorine-based gas, such as Cl2, BCl3, SiCl4, or CCl4, either singly or in combination.

[0371] The dry etching apparatus may be a dry etching apparatus having a high-density plasma source, such as an inductively coupled plasma (ICP) etching apparatus, or a capacitively coupled plasma (CCP) etching apparatus having parallel plate electrodes.

[0372] Furthermore, it is preferable to perform the first etching process by wet etching. By using wet etching, damage to the structure to be processed can be reduced compared to when dry etching is used. For example, wet etching can be performed using an alkaline solution. For example, TMAH, which is an alkaline solution, can be used for wet etching of an aluminum oxide film. Also, an acid solution containing fluoride can be used.

[0373] Next, the entire substrate is exposed to visible light or ultraviolet light, and the insulating layer 127a is preferably irradiated with the energy density of 0 mJ / cm. 2 Larger, 800mJ / cm 2 It is preferable that the dose is 0 mJ / cm or less. 2 Larger, 500mJ / cm 2 It is more preferable to perform the following. By performing such exposure after development, the transparency of the insulating layer 127a can be improved in some cases. Furthermore, the substrate temperature required for heat treatment to transform the insulating layer 127a into a tapered shape in a later step can be reduced in some cases.

[0374] Next, heat treatment (also referred to as post-baking) is performed. By performing the heat treatment, the insulating layer 127a can be transformed into the insulating layer 127 having tapered side surfaces (FIG. 12C). The heat treatment is performed at a temperature lower than the heat resistance temperature of the EL layer. The heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., more preferably 70° C. to 130° C. The heating atmosphere may be an air atmosphere or an inert gas atmosphere. The heating atmosphere may be an atmospheric pressure atmosphere or a reduced-pressure atmosphere. This can improve the adhesion between the insulating layer 127 and the inorganic insulating layer 125 and also improve the corrosion resistance of the insulating layer 127.

[0375] 13(A), an auxiliary electrode 105 is formed on the second electrode 102R, the second electrode 102B, the second electrode 102G, the conductive layer 152C, and the insulating layer 127. The auxiliary electrode 105 can be formed by a method such as sputtering or vacuum deposition.

[0376] 13(B), a protective layer 131 is formed on the auxiliary electrode 105. The protective layer 131 can be formed by a method such as vacuum deposition, sputtering, CVD, or ALD.

[0377] Subsequently, the substrate 120 is attached over the protective layer 131 using the resin layer 122, whereby a display device can be manufactured. As described above, in the method for manufacturing a display device of one embodiment of the present invention, the insulating layer 156 is provided so as to have a region overlapping with a side surface of the conductive layer 151, and the conductive layer 152 is formed so as to cover the conductive layer 151 and the insulating layer 156. This can increase the yield of the display device and suppress the occurrence of defects.

[0378] As described above, in the manufacturing method of a display device according to one embodiment of the present invention, the island-shaped organic compound layers 103R, 103G, and 103B are formed by forming films over the entire surface and then processing them, rather than using a fine metal mask. This allows the island-shaped layers to be formed with uniform thicknesses. This allows a high-resolution display device or a display device with a high aperture ratio to be realized. Furthermore, even when the resolution or aperture ratio is high and the distance between subpixels is extremely short, the organic compound layers 103R, 103G, and 103B can be prevented from contacting each other in adjacent subpixels. Therefore, leakage current between subpixels can be suppressed. This prevents crosstalk and realizes a display device with extremely high contrast. Furthermore, even in a display device including tandem light-emitting devices fabricated by photolithography, a display device with excellent characteristics can be provided.

[0379] (Fourth embodiment) In this embodiment, a display device according to one embodiment of the present invention will be described.

[0380] The display device of the present embodiment can be a high-definition display device, and can therefore be used as a display unit for information terminals (wearable devices) such as wristwatches and bracelets, as well as for wearable devices that can be worn on the head, such as VR devices such as head-mounted displays (HMDs) and AR devices such as glasses.

[0381] The display device of the present embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.

[0382] [Display module] 14A shows a perspective view of a display module 280. The display module 280 includes a display device 100A and an FPC 290. Note that the display device included in the display module 280 is not limited to the display device 100A, and may be any of display devices 100B to 100G described below.

[0383] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display unit 281. The display unit 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel unit 284 (described later) can be viewed.

[0384] 14(B) is a perspective view schematically showing the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to an FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0385] The pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 14(B). The various configurations described in the previous embodiments can be applied to the pixel 284a. Fig. 14(B) shows an example in which the pixel 284a has the same configuration as the pixel 178 shown in Fig. 6(A).

[0386] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0387] One pixel circuit 283a is a circuit that controls the driving of a plurality of elements included in one pixel 284a.

[0388] The circuit portion 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit portion 283. For example, it is preferable that the circuit portion 282 includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0389] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit section 282. An IC may be mounted on the FPC 290.

[0390] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are stacked below the pixel unit 284, thereby making it possible to extremely increase the aperture ratio (effective display area ratio) of the display unit 281.

[0391] Such a display module 280 has extremely high resolution and can therefore be suitably used in VR devices such as HMDs or glasses-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so that even if the display unit is enlarged with the lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this and can be suitably used in electronic devices having relatively small display units.

[0392] [Display device 100A] The display device 100A shown in FIG. 15A includes a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a capacitor 240, and a transistor 310.

[0393] The substrate 301 corresponds to the substrate 291 in FIGS. 14A and 14B. The transistor 310 is a transistor having a channel formation region in the substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as a source or drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0394] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0395] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided on the insulating layer 261 .

[0396] Capacitor 240 has conductive layer 241, conductive layer 245, and insulating layer 243 located therebetween. Conductive layer 241 functions as one electrode of capacitor 240, conductive layer 245 functions as the other electrode of capacitor 240, and insulating layer 243 functions as a dielectric of capacitor 240.

[0397] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0398] An insulating layer 255 is provided to cover the capacitor 240, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. Light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B are provided on the insulating layer 175. An insulator is provided in the region between adjacent light-emitting devices.

[0399] Insulating layer 156R is provided to have a region overlapping with a side surface of conductive layer 151R, insulating layer 156G is provided to have a region overlapping with a side surface of conductive layer 151G, and insulating layer 156B is provided to have a region overlapping with a side surface of conductive layer 151B. Furthermore, conductive layer 152R is provided to cover conductive layer 151R and insulating layer 156R, conductive layer 152G is provided to cover conductive layer 151G and insulating layer 156G, and conductive layer 152B is provided to cover conductive layer 151B and insulating layer 156B. Note that insulating layer 156 does not necessarily have to be provided.

[0400] The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B are electrically connected to one of the source and drain of the transistor 310 via an insulating layer 243, an insulating layer 255, an insulating layer 174, a plug 256 embedded in the insulating layer 175, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. Various conductive materials can be used for the plug.

[0401] Furthermore, a protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B via an auxiliary electrode 105. A substrate 120 is bonded to the protective layer 131 by a resin layer 122. For details of the components from the light-emitting devices 130 to the substrate 120, refer to embodiment 3. The substrate 120 corresponds to the substrate 292 in FIG. 14(A).

[0402] Fig. 15(B) is a modified example of the display device 100A shown in Fig. 15(A). The display device shown in Fig. 15(B) has a colored layer 132R, a colored layer 132G, and a colored layer 132B, and the light-emitting device 130 has an area where it overlaps with one of the colored layer 132R, the colored layer 132G, and the colored layer 132B. In the display device shown in Fig. 15(B), the light-emitting device 130 can emit, for example, white light. Furthermore, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light.

[0403] [Display device 100B] FIG. 16 shows a perspective view of the display device 100B.

[0404] The display device 100B has a configuration in which a substrate 352 and a substrate 351 are bonded together. In Fig. 16, the substrate 352 is indicated by a dashed line.

[0405] The display device 100B has a pixel portion 177, a connection portion 140, a circuit 356, wiring 355, etc. Fig. 16 shows an example in which an IC 354 and an FPC 353 are mounted on the display device 100B. Therefore, the configuration shown in Fig. 16 can also be called a display module having the display device 100B, an IC (integrated circuit), and an FPC. Here, a display device having a connector such as an FPC attached to a substrate, or a display device having an IC mounted on the substrate, is called a display module.

[0406] The connection section 140 is provided outside the pixel section 177. There may be one or more connection sections 140. The connection section 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0407] The circuit 356 can be, for example, a scanning line driver circuit.

[0408] The wiring 355 has a function of supplying signals and power to the pixel portion 177 and the circuit 356. The signals and power are input to the wiring 355 from the outside via the FPC 353 or from the IC 354.

[0409] 16 shows an example in which an IC 354 is provided on a substrate 351 by a COG (Chip On Glass) method or a COF (Chip on Film) method. The IC 354 may be, for example, an IC having a scanning line driver circuit or a signal line driver circuit. The display device 100B and the display module may not include an IC. Alternatively, the IC may be mounted on an FPC by a COF method, for example.

[0410] FIG. 17 shows an example of a cross section of the display device 100C, taken along a line including a part of the region including the FPC 353, a part of the circuit 356, a part of the pixel portion 177, and a part of the connection portion 140. In FIG.

[0411] [Display device 100C] The display device 100C shown in Figure 17 has, between a substrate 351 and a substrate 352, a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-emitting device 130B that emits blue light, etc.

[0412] For details of the light emitting devices 130R, 130G, and 130B, refer to the first embodiment or the second embodiment.

[0413] Light-emitting device 130R has conductive layer 224R, conductive layer 151R on conductive layer 224R, and conductive layer 152R on conductive layer 151R. Light-emitting device 130G has conductive layer 224G, conductive layer 151G on conductive layer 224G, and conductive layer 152G on conductive layer 151G. Light-emitting device 130B has conductive layer 224B, conductive layer 151B on conductive layer 224B, and conductive layer 152B on conductive layer 151B.

[0414] The conductive layer 224R is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. An end of the conductive layer 151R is located outside an end of the conductive layer 224R. An insulating layer 156R is provided to have a region in contact with a side surface of the conductive layer 151R, and a conductive layer 152R is provided to cover the conductive layer 151R and the insulating layer 156R.

[0415] Conductive layer 224G, conductive layer 151G, conductive layer 152G, and insulating layer 156G in light-emitting device 130G, and conductive layer 224B, conductive layer 151B, conductive layer 152B, and insulating layer 156B in light-emitting device 130B are similar to conductive layer 224R, conductive layer 151R, conductive layer 152R, and insulating layer 156R in light-emitting device 130R, and therefore detailed description thereof will be omitted.

[0416] Recesses are formed in the conductive layers 224R, 224G, and 224B so as to cover the openings provided in the insulating layer 214. A layer 128 is buried in the recesses.

[0417] Layer 128 has the function of filling in recesses in conductive layer 224R, conductive layer 224G, and conductive layer 224B and planarizing the surface. Conductive layers 151R, 151G, and 151B, which are electrically connected to conductive layer 224R, conductive layer 224G, and conductive layer 224B, are provided on conductive layer 224R, conductive layer 224G, and conductive layer 224B and layer 128. Therefore, the regions overlapping with the recesses in conductive layer 224R, conductive layer 224G, and conductive layer 224B can also be used as light-emitting regions, thereby increasing the aperture ratio of the pixel.

[0418] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used for the layer 128 as appropriate. In particular, the layer 128 is preferably formed using an insulating material, and is particularly preferably formed using an organic insulating material. For example, the organic insulating materials that can be used for the insulating layer 127 described above can be used for the layer 128.

[0419] A protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B via an auxiliary electrode 105. The protective layer 131 and the substrate 352 are bonded together via an adhesive layer 142. A light-shielding layer 157 is provided on the substrate 352. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting device 130. In FIG. 17, the space between the substrates 352 and 351 is filled with the adhesive layer 142, thereby applying a solid sealing structure. Alternatively, the space may be filled with an inert gas (nitrogen, argon, etc.), thereby applying a hollow sealing structure. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting devices. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0420] 17 shows an example in which connecting portion 140 has conductive layer 224C obtained by processing the same conductive film as conductive layers 224R, 224G, and 224B, conductive layer 151C obtained by processing the same conductive film as conductive layers 151R, 151G, and 151B, and conductive layer 152C obtained by processing the same conductive film as conductive layers 152R, 152G, and 152B. Also shown in FIG. 17 is an example in which insulating layer 156C is provided so as to have a region overlapping with a side surface of conductive layer 151C.

[0421] The display device 100C is a top-emission type. Light emitted by the light-emitting device is emitted toward the substrate 352. The substrate 352 is preferably made of a material that is highly transparent to visible light. The pixel electrode contains a material that reflects visible light, and the counter electrode (second electrode 102) and auxiliary electrode 105 contain a material that transmits visible light.

[0422] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 351 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0423] The insulating layers 211, 213, and 215 are each preferably formed using an inorganic insulating film.

[0424] The insulating layer 214, which functions as a planarizing layer, is preferably an organic insulating layer.

[0425] The transistor 201 and the transistor 205 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a conductive layer 222a and a conductive layer 222b functioning as a source and a drain, a semiconductor layer 231, an insulating layer 213 functioning as a gate insulating layer, and a conductive layer 223 functioning as a gate.

[0426] A connection portion 204 is provided in a region of the substrate 351 where the substrate 352 does not overlap. In the connection portion 204, a source electrode or a drain electrode of the transistor 201 is electrically connected to the FPC 353 via a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a stacked structure including a conductive film obtained by processing the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive film obtained by processing the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive film obtained by processing the same conductive film as the conductive layers 152R, 152G, and 152B. The conductive layer 166 is exposed on the top surface of the connection portion 204. This allows the connection portion 204 and the FPC 353 to be electrically connected via the connection layer 242.

[0427] It is preferable to provide a light-shielding layer 157 on the surface of the substrate 352 facing the substrate 351. The light-shielding layer 157 can be provided between adjacent light-emitting devices, on the connection section 140, on the circuit 356, etc. Also, various optical members can be arranged on the outside of the substrate 352.

[0428] The substrate 351 and the substrate 352 can be made of the same material as can be used for the substrate 120 .

[0429] The adhesive layer 142 can be made of a material that can be used for the resin layer 122 .

[0430] The connection layer 242 may be an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0431] [Display device 100D] The display device 100D shown in FIG. 18 differs from the display device 100C shown in FIG. 17 mainly in that it is a bottom-emission display device.

[0432] Light emitted from the light emitting device is emitted toward the substrate 351. It is preferable that a material with high transparency to visible light is used for the substrate 351. On the other hand, the light transparency of the material used for the substrate 352 is not an issue.

[0433] A light-shielding layer 317 is preferably formed between the substrate 351 and the transistor 201 and between the substrate 351 and the transistor 205. Figure 18 shows an example in which the light-shielding layer 317 is provided over the substrate 351, the insulating layer 153 is provided over the light-shielding layer 317, and the transistors 201, 205, etc. are provided over the insulating layer 153.

[0434] Light emitting device 130R includes conductive layer 112R, conductive layer 126R on conductive layer 112R, and conductive layer 129R on conductive layer 126R.

[0435] Light emitting device 130B includes conductive layer 112B, conductive layer 126B on conductive layer 112B, and conductive layer 129B on conductive layer 126B.

[0436] The conductive layers 112R, 112B, 126R, 126B, 129R, and 129B are each made of a material that is highly transparent to visible light. The second electrode 102 is preferably made of a material that reflects visible light.

[0437] Although the light emitting device 130G is not shown in FIG. 18, the light emitting device 130G is also provided.

[0438] In addition, although FIG. 18 and other figures show an example in which the top surface of the layer 128 has a flat portion, the shape of the layer 128 is not particularly limited.

[0439] [Display device 100E] A display device 100E shown in Fig. 19 is an example of a bottom-emission type display device that differs from the display device 100D shown in Fig. 18. The display device 100E differs from the display device 100D in that it has an organic resin layer 180. Note that in the drawing, the reference numerals of the same components as those in Fig. 18 may be omitted, and the description in Fig. 18 can be referred to for details.

[0440] 19(B) shows a top view layout of pixel 178 (pixel 178a and pixel 178b) having subpixels 110 (subpixels 110R, 110G, and 110B), and Fig. 19(C) shows a top view of organic resin layer 180 in a region where subpixels 110R and 110G of pixel 178 are formed. Note that the width between light-shielding layers 317 is width 110Rw in the light-emitting region of subpixel 110R.

[0441] As shown in FIG. 19(A), the organic resin layer 180 is provided on the insulating layer 214. As shown in the region surrounded by the dashed line in FIG. 19(A) and in FIG. 19(C), the organic resin layer 180 has curved recesses 181 (recesses 181a and 181b) at least in the region where the subpixels are formed. The recesses 181 may be provided outside the light-emitting region, such as recess 181c. By providing recess 181c, light emitted in the region overlapping with the light-shielding layer 317 or light traveling to the region overlapping with the light-shielding layer 317 is refracted and can be extracted from the light-emitting region, thereby improving the light-emitting efficiency.

[0442] A plurality of recesses 181 may be formed in a matrix. Recesses 181a and 181b may be provided in contact with each other, or may have a flat surface between them.

[0443] 19, the recess has a hexagonal top surface shape (FIG. 19(C)) and a semicircular cross-sectional shape (FIG. 19(A)), but other shapes may be used as needed. For example, the recess may have a polygonal top surface shape such as a triangle, a quadrangle (including a rectangle and a square), a pentagon, or any of these polygons with rounded corners, an ellipse, or a circle.

[0444] An insulating layer containing an organic material can be used as the organic resin layer 180. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, precursors of these resins, etc. can be used as the organic resin layer 180. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the organic resin layer 180.

[0445] Furthermore, a photosensitive resin can be used as the organic resin layer 180. A photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0446] The organic resin layer 180 may contain a material that absorbs visible light. For example, the organic resin layer 180 itself may be made of a material that absorbs visible light, or the organic resin layer 180 may contain a pigment that absorbs visible light. For example, the organic resin layer 180 may be made of a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix.

[0447] In addition, a first electrode 101 is provided on the organic resin layer 180, an organic compound layer 103 is provided on the first electrode 101, and a second electrode 102 is provided on the organic compound layer 103. Ends of the first electrode 101, the organic compound layer 103, and the second electrode 102 may be covered with an insulating layer 127.

[0448] Furthermore, the first electrode 101 formed on the organic resin layer 180 has a recess similar to the recess of the organic resin layer 180. Furthermore, the organic compound layer 103 formed on the first electrode 101 has a recess similar to the recess of the first electrode 101. Furthermore, the second electrode 102 formed on the organic compound layer 103 has a recess similar to the recess of the organic compound layer 103. Furthermore, the auxiliary electrode 105 formed on the second electrode 102 has a recess similar to the recess of the second electrode 102. That is, the recesses of the organic resin layer 180, the first electrode 101, the organic compound layer 103, the second electrode 102, and the auxiliary electrode 105 overlap one another.

[0449] In addition, a second electrode 102 is provided over the organic compound layer 103 and the insulating layer 127, and an auxiliary electrode 105 is provided over the second electrode 102. A protective layer 131 is provided over the auxiliary electrode 105, and the auxiliary electrode 105 is bonded to a substrate 352 with an adhesive layer 142 interposed therebetween.

[0450] Although light emitting device 130G and light emitting device 130B are not shown in FIG. 19, light emitting device 130G and light emitting device 130B are also provided.

[0451] The light-emitting device according to one embodiment of the present invention, which includes the organic resin layer 180 as described above, has the structure described in Embodiment 1 or 2. As a result, an organic semiconductor device with low driving voltage and excellent characteristics can be provided.

[0452] [Display device 100F] The display device 100F shown in FIG. 20 is a modification of the display device 100C shown in FIG. 17, and differs from the display device 100C mainly in that it has colored layers 132R, 132G, and 132B.

[0453] In the display device 100F, the light-emitting device 130 has an area overlapping one of the colored layer 132R, the colored layer 132G, and the colored layer 132B. The colored layer 132R, the colored layer 132G, and the colored layer 132B can be provided on the surface of the substrate 352 facing the substrate 351. An end of the colored layer 132R, an end of the colored layer 132G, and an end of the colored layer 132B can overlap the light-shielding layer 157.

[0454] In the display device 100F, for example, the colored layer 132R transmits red light, the colored layer 132G transmits green light, and the colored layer 132B transmits blue light. The display device 100F may be configured such that the colored layers 132R, 132G, and 132B are provided between the protective layer 131 and the adhesive layer 142.

[0455] [Display device 100G] The display device 100G shown in Fig. 21 is a modified example of the display device 100F shown in Fig. 20, and has microlenses 182 on the colored layers 132R, 132G, and 132B. Note that in the figure, the reference numerals of the same components as those in Fig. 20 may be omitted, and the description in Fig. 20 can be referred to for details.

[0456] 21(B) shows a top view layout of a pixel 178 (pixel 178a and pixel 178b) having subpixels 110 (subpixels 110R, 110G, and 110B), and FIG. 21(C) shows a top view of a microlens 182 in a region where the subpixels 110R and 110G of the pixel 178 are formed. The width of the region where the auxiliary electrode 105 and the organic compound layer 103 are in contact is width 110Gw in the light-emitting region of the subpixel 110G.

[0457] 21(A) includes a planarization film 143 on a protective layer 131, and a colored layer 132R, a colored layer 132G, and a colored layer 132B on the planarization film 143. A planarization film 144 is provided so as to cover the colored layer 132R, the colored layer 132G, and the colored layer 132B. A microlens 182 is provided on the planarization film 144.

[0458] As shown in FIG. 21C, the microlens 182 may be provided for each sub-pixel in a region where the sub-pixel is formed.

[0459] 21(C), the top surface shape of the microlens 182 is shown as a hexagon, but other shapes may be used as needed. For example, the top surface shape of the recess may be a polygon such as a triangle, a quadrangle (including a rectangle and a square), a pentagon, or any of these polygons with rounded corners, an ellipse, or a circle.

[0460] The microlenses 182 can be formed using the same material as the organic resin layer 180 .

[0461] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when multiple configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0462] (Embodiment 5) In this embodiment, an electronic device according to one embodiment of the present invention will be described.

[0463] The electronic devices of this embodiment include the display device of one embodiment of the present invention in their display portions. The display device of one embodiment of the present invention has high display performance and can easily achieve high definition and high resolution. Therefore, the display device of one embodiment of the present invention can be used in the display portions of various electronic devices.

[0464] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0465] In particular, the display device of one embodiment of the present invention can have high resolution and can therefore be suitably used in electronic devices having a relatively small display area. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices (head-mounted displays), eyeglass-type AR devices, and MR devices.

[0466] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0467] An example of a wearable device that can be worn on the head will be described with reference to FIGS. 22(A) to 22(D).

[0468] The electronic device 700A shown in Figure 22(A) and the electronic device 700B shown in Figure 22(B) each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0469] The display device of one embodiment of the present invention can be applied to the display panel 751. Therefore, the electronic device can be highly reliable.

[0470] The electronic device 700A and the electronic device 700B can each project an image displayed on the display panel 751 onto a display area 756 of the optical member 753. Because the optical member 753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visible through the optical member 753.

[0471] Electronic device 700A and electronic device 700B may be provided with a camera capable of capturing an image in front of them as an imaging unit. Furthermore, electronic device 700A and electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in display area 756.

[0472] The communication unit has a wireless communication device, and can supply, for example, a video signal via the wireless communication device. Note that instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential can be connected may be provided.

[0473] Furthermore, the electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or by wire.

[0474] The housing 721 may be provided with a touch sensor module.

[0475] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, or an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0476] The electronic device 800A shown in Figure 22(C) and the electronic device 800B shown in Figure 22(D) each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0477] The display device of one embodiment of the present invention can be applied to the display portion 820. Therefore, the electronic device can be highly reliable.

[0478] Display unit 820 is provided inside housing 821 at a position that can be viewed through lens 832. Also, by displaying different images on the pair of display units 820, it is possible to perform a three-dimensional display using parallax.

[0479] It is preferable that electronic device 800A and electronic device 800B each have a mechanism that allows the left and right positions of lens 832 and display unit 820 to be adjusted so that they are optimally positioned according to the position of the user's eyes.

[0480] The wearing part 823 allows the user to wear the electronic device 800A or the electronic device 800B on the head.

[0481] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide angle.

[0482] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone.

[0483] The electronic device 800A and the electronic device 800B may each have an input terminal to which a cable can be connected for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0484] The electronic device of one embodiment of the present invention may have a function of wirelessly communicating with the earphone 750 .

[0485] 22B includes an earphone unit 727. A part of the wiring connecting the earphone unit 727 and a control unit may be disposed inside the housing 721 or the attachment unit 723.

[0486] 22(D) includes an earphone unit 827. For example, the earphone unit 827 and the control unit 824 may be configured to be connected to each other by wire.

[0487] As described above, the electronic devices of one embodiment of the present invention are preferably either glasses-type devices (such as the electronic devices 700A and 700B) or goggle-type devices (such as the electronic devices 800A and 800B).

[0488] An electronic device 6500 shown in FIG. 23A is a portable information terminal that can be used as a smartphone.

[0489] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display portion 6502 has a touch panel function.

[0490] The display device of one embodiment of the present invention can be applied to the display portion 6502. Therefore, the electronic device can be highly reliable.

[0491] FIG. 23B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0492] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0493] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0494] In an area outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0495] The display device of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Furthermore, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0496] 23C shows an example of a television set. A television set 7100 includes a display portion 7000 built in a housing 7171. Here, the housing 7171 is supported by a stand 7173.

[0497] The display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can be highly reliable.

[0498] The television set 7100 shown in FIG. 23C can be operated using an operation switch provided on a housing 7171 and a separate remote control 7151.

[0499] 23D shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. The housing 7211 includes a display portion 7000.

[0500] The display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can be highly reliable.

[0501] 23(E) and 23(F) show an example of digital signage.

[0502] 23E includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0503] 23F shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0504] 23E and 23F, the display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0505] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0506] Furthermore, as shown in Figures 23(E) and 23(F), it is preferable that the digital signage 7300 or the digital signage 7400 be able to wirelessly communicate with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user.

[0507] The electronic devices shown in Figures 24(A) to 24(G) have a housing 9000, a display portion 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0508] 24(A) to 24(G) have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc.

[0509] The electronic devices shown in FIGS. 24A to 24G will be described in detail below.

[0510] FIG. 24A is a perspective view showing a mobile information terminal 9171. The mobile information terminal 9171 can be used as, for example, a smartphone. The mobile information terminal 9171 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, or the like. The mobile information terminal 9171 can display text and image information on multiple surfaces thereof. FIG. 24A shows an example in which three icons 9050 are displayed. Information 9051 indicated by a dashed rectangle can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notification of an incoming email, SNS, phone call, etc., the title of the email or SNS, the sender's name, the date and time, the remaining battery level, and radio wave intensity. Alternatively, the icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0511] 24B is a perspective view of a mobile information terminal 9172. The mobile information terminal 9172 has a function of displaying information on three or more surfaces of the display portion 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9172 while the mobile information terminal 9172 is placed in a breast pocket of clothes.

[0512] 24C is a perspective view of a tablet terminal 9173. The tablet terminal 9173 is capable of executing various applications such as mobile phone calls, e-mails, document browsing and creation, music playback, internet communication, and computer games. The tablet terminal 9173 has a display portion 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front side of a housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and a connection terminal 9006 on the bottom.

[0513] 24D is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display portion 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free conversation by communicating with, for example, a headset capable of wireless communication. The mobile information terminal 9200 can also perform data transmission and reception with another information terminal and charge itself through a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0514] 24(E) to 24(G) are perspective views showing a foldable mobile information terminal 9201. FIG. 24(E) shows the mobile information terminal 9201 in an unfolded state, FIG. 24(G) shows it in a folded state, and FIG. 24(F) is a perspective view showing a state in the process of changing from one of FIG. 24(E) and FIG. 24(G) to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent viewability of the display. A display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm to 150 mm.

[0515] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when multiple configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate. [Example]

[0516] Example 1 In this example, a sample simulating an electron injection layer included in a light-emitting device according to one embodiment of the present invention will be evaluated by electron spin resonance spectroscopy. The structural formulas of organic compounds used in this example are shown below.

[0517] [ka]

[0518] Next, the method for producing each sample used in this example will be described.

[0519] (Method for preparing sample 1) First, the quartz substrate was fixed to a holder installed in a vacuum deposition apparatus so that the surface to be deposited faced downward. -4After reducing the pressure to 10 Pa, 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), 4,7-di-1-pyrrolidinyl-1,10-phenanthroline (abbreviation: Pyrrd-Phen), and In were co-evaporated to a thickness of 50 nm in a volume ratio of 0.5:0.5:0.02 (= mPPhen2P:Pyrrd-Phen:In) to prepare Sample 1. The size of the quartz substrate was 3.0 mm × 20 mm.

[0520] (Method for preparing sample 2) Sample 2 is a sample in which the In used in Sample 1 is replaced with Ag. Other than that, it was prepared in the same manner as Sample 1.

[0521] (Method for preparing comparative sample 3) Comparative sample 3 was prepared by co-evaporating 50 nm of pyrrd-phen and indium at a volume ratio of 1:0.02 (= pyrrd-phen:indium) without using the mPPhen2P used in sample 1. The rest of the sample was prepared in the same way as sample 1.

[0522] (Method for preparing comparative sample 4) Comparative sample 4 was prepared by co-evaporating mPPhen2P and In to a thickness of 50 nm at a volume ratio of 1:0.02 (=mPPhen2P:In) without using the Pyrrd-Phen used in sample 1. The rest of the sample was prepared in the same manner as sample 1.

[0523] (Method for preparing comparative sample 5) Comparative sample 5 was prepared by co-evaporating 50 nm of Pyrrd-Phen and Ag at a volume ratio of 1:0.02 (= Pyrrd-Phen:Ag) without using the mPPhen2P used in sample 2. The rest of the sample was prepared in the same manner as sample 2.

[0524] (Method for preparing comparative sample 6) Comparative sample 6 was prepared by co-evaporating 50 nm of Pyrrd-Phen and mPPhen2P in a weight ratio of 0.5:0.5 (=Pyrrd-Phen:mPPhen2P) without using the In used in sample 1. The rest of the sample was prepared in the same manner as sample 1.

[0525] (Method for producing comparative samples 7 to 9) Comparative sample 7 is a sample prepared by vapor deposition of Pyrrd-Phen. Comparative sample 8 is a sample prepared by vapor deposition of mPPhen2P. Comparative sample 9 is a sample prepared by vapor deposition of In. Other than that, they were prepared in the same way as sample 1.

[0526] Each sample was evaluated using the electron spin resonance (ESR) method. The electron spin resonance spectrum was measured using an electron spin resonance measurement device, Model E500 (manufactured by Bruker). The measurements were performed at room temperature with a resonance frequency of 9.56 GHz, output power of 1 mW, modulation field of 50 mT, modulation width of 0.5 mT, time constant of 0.04 s, and sweep time of 1 min.

[0527] The results of ESR measurements of each of the prepared samples are shown in Figures 25 to 33. Figure 25 shows the ESR spectrum of Sample 1, Figure 26 shows the ESR spectrum of Sample 2, Figure 27 shows the ESR spectrum of Comparative Sample 3, Figure 28 shows the ESR spectrum of Comparative Sample 4, Figure 29 shows the ESR spectrum of Comparative Sample 5, Figure 30 shows the ESR spectrum of Comparative Sample 6, Figure 31 shows the ESR spectrum of Comparative Sample 7, Figure 32 shows the ESR spectrum of Comparative Sample 8, and Figure 33 shows the ESR spectrum of Comparative Sample 9. The composition of each sample and the spin density derived from signals with a g value of around 2.00 are shown in the table below.

[0528] [Table 5]

[0529] 25 to 33 and the above table, in Sample 1 and Sample 2, a signal was observed at a g value of around 2.00, and 16 spins / cm 3 In contrast to the above spin densities measured in Comparative Samples 3 to 9, no signal was observed near the g value of 2.00, and the spin densities were below the lower detection limit of the electron spin resonance measurement device, 1.4 × 10 16 spins / cm 3 This shows that the spin density of Samples 1 and 2, which are samples made up of three different materials, is higher than that of the samples made up of two different materials and the samples made up of a single material.

[0530] This indicates that in a layer having a combination of a metal, a first organic compound, and a second organic compound, an interaction between the materials occurs, resulting in the formation of a SOMO level.

[0531] Similarly, N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (PCBBiF) and a fluorine-containing electron acceptor material (OCHD-003) with a molecular weight of 672 were co-deposited on a quartz substrate at a weight ratio of 1:0.1 (PCBBiF:OCHD-003) to a thickness of 100 nm. The electron spin resonance spectrum was measured at room temperature using the ESR method using an electron spin resonance spectrometer, model JES FA300 (manufactured by JEOL Ltd.). The measurements were performed at room temperature with a resonant frequency of 9.18 GHz, an output of 1 mW, a modulation field of 50 mT, a modulation width of 0.5 mT, a time constant of 0.03 s, and a sweep time of 1 min. The results are shown in Figure 34. From Figure 34, a signal is observed at a g value of around 2.00, and the spin density is 5 × 10 19 spins / cm 3 This indicates that OCHD-003 exhibits electron accepting properties toward PCBBiF, and the layer containing PCBBiF and OCHD-003 functions as a hole injection layer. [Example]

[0532] In this example, we fabricated and evaluated light-emitting device 1, which is a light-emitting device according to one embodiment of the present invention, and reference light-emitting device 2, which is a reference light-emitting device. Light-emitting device 1 is a light-emitting device fabricated by a fabrication method that simulates a fabrication method in which an organic compound film serving as an organic compound layer and a conductive film serving as a second electrode are formed and then these films are processed by photolithography to form the organic compound layer and the second electrode. This fabrication method involves forming an organic compound layer and a second electrode, followed by exposure to air and heating. On the other hand, reference light-emitting device 2 is a light-emitting device fabricated by a fabrication method in which the organic compound layer and the second electrode are not exposed to air or heated after the formation of the organic compound layer and the second electrode. The structural formulas of the organic compounds used in light-emitting device 1 and reference light-emitting device 2 are shown below.

[0533] [ka]

[0534] (Method for fabricating light-emitting device 1) First, a silver (Ag) film was formed on a glass substrate by sputtering to a thickness of 100 nm as a reflective electrode, and then an indium tin oxide (ITSO) film containing silicon oxide was formed on the glass substrate by sputtering to a thickness of 85 nm as a transparent electrode. The electrode area was 4 mm 2 The transparent electrode functions as an anode, and together with the reflective electrode, it can be considered as the first electrode.

[0535] Next, as a pretreatment for forming a light-emitting device on the substrate, the substrate surface was washed with water and baked at 200°C for 1 hour.

[0536] Then 1×10 -4 The substrate was placed in a vacuum deposition apparatus whose internal pressure had been reduced to about Pa, and was subjected to a heat treatment at 170°C for 30 minutes in a heating chamber within the vacuum deposition apparatus, after which the substrate was allowed to cool for about 30 minutes.

[0537] Next, the substrate was fixed to a holder installed in a vacuum evaporation system with the surface on which the first electrode was formed facing downward. A hole injection layer was then formed on the first electrode by co-evaporation of N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF) and an electron acceptor material (OCHD-003) with a molecular weight of 672 and containing four or more fluorines at a weight ratio of 1:0.03 (= PCBBiF:OCHD-003) and a thickness of 10 nm.

[0538] On the hole injection layer, PCBBiF was evaporated to a thickness of 55 nm to form a hole transport layer.

[0539] Subsequently, 8-(1,1′:4′,1″-terphenyl-3-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviated as 8mpTP-4mDBtPBfpm), 9-(2-naphthyl)-9′-phenyl-3,3′-bi-9H-carbazole (abbreviated as βNCCP), and [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3 An emissive layer was formed by co-evaporation of [8mpTP-4mDBtPBfpm-βNCCP-Ir(5mppy-d3)2(mbfpypy-d3)] and [β-[8mpTP-4mDBtPBfpm-βNCCP-Ir(5mppy-d3)2(mbfpypy-d3)]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3)2(mbfpypy-d3)) in a weight ratio of 0.5:0.5:0.1 (=8mpTP-4mDBtPBfpm:βNCCP:Ir(5mppy-d3)2(mbfpypy-d3)) to a thickness of 40 nm.

[0540] Next, 2-{3-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviation: 2mPCCzPDBq) was evaporated onto the light-emitting layer to a thickness of 15 nm to form an electron-transporting layer.

[0541] Next, an electron injection layer was formed on the electron transport layer by co-evaporation of 4,7-di(2,3,3a,4,5,6,7,7a-octahydro-1H-isoindol-2-yl)-1,10-phenanthroline (abbreviation: Hid2Phen) (structural formula (105)), 2,2′-(2,2′-bipyridine-6,6′-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 6,6′(P-Bqn)2BPy), and indium (In) in a volume ratio of 0.5:0.5:0.02 (= Hid2Phen:6,6′(P-Bqn)2BPy:In) to a thickness of 5 nm.

[0542] Next, copper phthalocyanine (abbreviation: CuPc) was vapor-deposited on the electron injection layer to a film thickness of 2 nm to form an electron relay layer.

[0543] Next, a P-type layer was formed on the electron relay layer by co-evaporation of PCBBiF and molybdenum(VI) oxide (MoO3) in a volume ratio of 1:0.5 (=PCBBiF:MoO3) and a thickness of 15 nm.

[0544] Next, a second electrode was formed on the P-type layer by forming a film of indium tin oxide (ITO) as a transparent electrode with a thickness of 40 nm by sputtering.

[0545] After the formation of the second electrode, it was exposed to the atmosphere for 1 hour. -4 The substrate was placed in a vacuum deposition apparatus whose internal pressure had been reduced to 100 Pa, and heated at 100° C. for 1 hour in a heating chamber within the vacuum deposition apparatus.

[0546] Next, a capping layer was formed on the second electrode by sputtering indium tin oxide (ITO) to a thickness of 70 nm. The capping layer can also be considered the second electrode. That is, the 40 nm ITO formed before air exposure and the 70 nm ITO formed after air exposure can be considered together as the second electrode, and the second electrode also functions as a capping layer. This completes the fabrication method for light-emitting device 1.

[0547] (Method for fabricating reference light-emitting device 2) Reference light-emitting device 2 differs from light-emitting device 1 in that, after the formation of the P-type layer in the fabrication method for light-emitting device 1, a second electrode was formed by depositing a 110 nm thick film of indium tin oxide (ITO) as a transparent electrode by sputtering, and in that the air exposure and heating steps were not performed.

[0548] The device structures of the light-emitting device 1 and the reference light-emitting device 2 are summarized in the following table.

[0549] [Table 6]

[0550] The fabricated light-emitting device 1 and reference light-emitting device 2 were sealed with a glass substrate in a nitrogen atmosphere glove box to prevent the light-emitting devices from being exposed to the atmosphere (a UV-curable sealant was applied around the elements, UV was irradiated only on the sealant without irradiating the light-emitting device, and heat-treated at 80°C under atmospheric pressure for 1 hour), and then the initial characteristics of each light-emitting device were measured.

[0551] The luminance-current density characteristics of light-emitting device 1 and reference light-emitting device 2 are shown in Fig. 35, luminance-voltage characteristics in Fig. 36, current efficiency-current density characteristics in Fig. 37, current density-voltage characteristics in Fig. 38, and electroluminescence spectra in Fig. 39. In the legends of Figs. 35 to 39, light-emitting device 1 is abbreviated as Device 1, and reference light-emitting device 2 is abbreviated as Reference.

[0552] Furthermore, the luminance of the light-emitting device 1 and the comparative light-emitting device 2 was 1000 cd / m 2 The main characteristics in this region are shown in the table below. Note that the luminance, CIE chromaticity, and electroluminescence spectrum were measured using a spectroradiometer (SR-UL1R, manufactured by Topcon Corporation) at room temperature.

[0553] [Table 7]

[0554] 35 to 39 and the above table, it can be seen that the light-emitting device 1 exhibited results equivalent to or better than those of the reference light-emitting device 2, which was not subjected to air exposure and heating. Since processing by photolithography always includes an air exposure step, it was found that the light-emitting device of one embodiment of the present invention is resistant to processing by photolithography and can maintain good characteristics even after processing by photolithography. [Explanation of symbols]

[0555] 100A display device 100B display device 100C display device 100D display device 100E display device 100F display device 100G display device 101a first electrode 101b First electrode 101c first electrode 101d first electrode 101 first electrode 101R First electrode 101G First electrode 101B first electrode 102 second electrode 102b second electrode 102d second electrode 102c second electrode 102B second electrode 102R Second electrode 102a second electrode 102G Second electrode 102Gf Conductive Film 102Bf Conductive Film 102Rf conductive film 103a Organic compound layer 103B Organic compound layer 103b Organic compound layer 103Bf Organic compound film 103c Organic compound layer 103d Organic compound layer 103G organic compound layer 103Gf organic compound film 103R Organic compound layer 103Rf Organic compound film 103 Organic compound layer 105 Auxiliary electrode 106 Insulating layer 110B subpixel 110G subpixel 110R subpixel 110 subpixels 111a Hole injection layer 111b Hole injection layer 111c Hole injection layer 111d Hole injection layer 111 Hole injection layer 112 Hole transport layer 112a Hole transport layer 112b hole transport layer 112c_1 Hole transport layer 112c_2 Hole transport layer 112d_1 Hole transport layer 112d_2 Hole transport layer 112R conductive layer 112B Conductive layer 113 Light-emitting layer 113a Light-emitting layer 113b Light-emitting layer 113c_1 Light-emitting layer 113c_2 Emitting layer 113d_1 Light-emitting layer 113d_2 Light-emitting layer 114 Electron transport layer 114a Electron transport layer 114b Electron transport layer 114c_1 Electron transport layer 114c_2 Electron transport layer 114d_1 Electron transport layer 114d_2 Electron transport layer 115 Electron injection layer 115a Electron injection layer 115b Electron injection layer 115c Electron injection layer 115d Electron injection layer 116c middle class 116d middle class 117 P type layer 117c P type layer 117d P type layer 118 Electronic Relay Layer 118c Electronic Relay Layer 118d Electronic Relay Layer 119 N-type layer 119c N-type layer 119d N-type layer 120 boards 122 Resin layer 124a pixels 124b pixels 125f inorganic insulating film 125 Inorganic insulating layer 126R conductive layer 126B Conductive layer 127a Insulating layer 127f insulating film 127 Insulating Layer 128 layers 129R conductive layer 129B Conductive layer 130a Light-emitting device 130B Light-emitting devices 130b Light-emitting device 130c Light Emitting Device 130d Light Emitting Device 130G Light Emitting Device 130R Light Emitting Device 130 Light-emitting devices 131 Protective layer 132B Colored layer 132G colored layer 132R colored layer 140 Connection 141 areas 142 Adhesive layer 151B Conductive layer 151C conductive layer 151f Conductive film 151G conductive layer 151R conductive layer 151 Conductive layer 152B Conductive layer 152C conductive layer 152f Conductive film 152G Conductive layer 152R Conductive layer 152 Conductive layer 153 Insulating Layer 156B Insulating layer 156C Insulation layer 156f insulating film 156G Insulation layer 156R Insulation layer 156 Insulating Layer 157 Light blocking layer 158 Sacrificial Layer 158B Sacrificial Layer 158Bf sacrificial film 158G Sacrificial Layer 158Gf sacrificial film 158R Sacrificial Layer 158Rf sacrificial film 159 Mask Layer 159B Mask layer 159Bf Mask membrane 159G Mask layer 159Gf Mask Film 159R Mask layer 159Rf Mask Film 166 Conductive Layer 171 Insulating layer 172 Conductive layer 173 Insulating Layer 174 Insulating Layer 175 Insulating Layer 176 Plug 177 Pixel section 178 pixels 178a pixels 178b pixels 179 Conductive Layer 190B resist mask 190G resist mask 190R resist mask 191 Resist mask 201 Transistor 204 Connection 205 Transistor 211 Insulating layer 213 Insulating Layer 214 Insulating layer 215 Insulating Layer 221 Conductive layer 222a conductive layer 222b Conductive layer 223 Conductive Layer 224B Conductive layer 224C conductive layer 224G conductive layer 224R conductive layer 231 Semiconductor layer 240 capacity 241 Conductive Layer 242 Connection Layer 243 Insulating Layer 245 Conductive Layer 254 Insulating Layer 255 insulating layer 256 plug 261 Insulating Layer 271 Plug 280 Display Module 281 Display section 282 Circuit section 283a Pixel circuit 283 Pixel circuit section 284a pixels 284 pixel section 285 Terminal section 286 Wiring section 290 FPC 291 Circuit Board 292 PCB 301 Substrate 310 Transistor 311 Conductive layer 312 Low resistance region 313 Insulating Layer 314 Insulating Layer 315 Element isolation layer 317 Light blocking layer 351 Circuit Board 352 Circuit Board 353 FPC 354 IC 355 Wiring 356 circuits 501 first electrode 501c First light-emitting unit 501d First Light-Emitting Unit 502 Second electrode 502c Second light-emitting unit 502d Second light-emitting unit 511 First Light Emitting Unit 512 Second Light Emitting Unit 513 Middle Class 700A electronic equipment 700B Electronic equipment 721 Case 723 Mounting part 727 Earphones 750 earphones 751 Display Panel 753 Optical Components 756 Display area 757 frames 758 Nose pad 800A electronic equipment 800B Electronic equipment 820 Display section 821 Case 822 Communications Department 823 Mounting part 824 Control Unit 825 Imaging unit 827 Earphones 832 Lens 1000 insulating layers 6500 Electronic equipment 6501 Housing 6502 Display section 6503 Power button 6504 Button 6505 Speaker 6506 Microphone 6507 Camera 6508 Light source 6510 Protective materials 6511 Display Panel 6512 Optical components 6513 Touch Sensor Panel 6515 FPC 6516 IC 6517 Printed Circuit Board 6518 Battery 7000 Display 7100 Television equipment 7151 Remote Controlled Machine 7171 Case 7173 Stand 7200 Notebook Personal Computer 7211 Case 7212 keyboard 7213 Pointing Device 7214 External connection port 7300 Digital Signage 7301 Housing 7303 Speaker 7311 Information terminals 7400 Digital Signage 7401 Pillar 7411 Information terminals 9000 chassis 9001 Display section 9002 Camera 9003 Speaker 9005 Operation key 9006 Connection terminal 9007 Sensor 9008 Microphone 9050 Icon 9051 Information 9052 Information 9053 Information 9054 Information 9055 Hinge 9171 Mobile Information Terminal 9172 Mobile Information Terminal 9173 Tablet Devices 9200 Mobile Information Terminal 9201 Mobile Information Terminal

Claims

1. a light emitting device formed on a first insulating layer, the light-emitting device has a first electrode, a second electrode, and an organic compound layer; the first electrode is formed in contact with the first insulating layer, the organic compound layer is located between the first electrode and the second electrode, the second electrode and the organic compound layer are separated from at least one of a plurality of other light-emitting devices adjacent to the light-emitting device; when viewed from a direction substantially perpendicular to a surface of the first insulating layer on which the first electrode is formed, an outline of the second electrode and an outline of the organic compound layer substantially coincide with each other; the organic compound layer has a light-emitting layer and an electron injection layer, the electron injection layer includes a mixed layer including a metal, a first organic compound, and a second organic compound; the first organic compound has a phenanthroline ring having an electron-donating group; The second organic compound has a π-electron deficient heteroaromatic ring.

2. a light emitting device formed on a first insulating layer, the light-emitting device has a first electrode, a second electrode, and an organic compound layer; the first electrode is formed in contact with the first insulating layer, the organic compound layer is located between the first electrode and the second electrode, the second electrode and the organic compound layer are separated from at least one of a plurality of other light-emitting devices adjacent to the light-emitting device; when viewed from a direction substantially perpendicular to a surface of the first insulating layer on which the first electrode is formed, an outline of the second electrode and an outline of the organic compound layer substantially coincide with each other; the organic compound layer has a light-emitting layer and an electron injection layer, the electron injection layer includes a mixed layer including a metal, a first organic compound, and a second organic compound; the first organic compound has a phenanthroline ring, The minimum value of the electrostatic potential of the first organic compound is such that the threshold of the electron density distribution is 0.0004 e / a ０ ３ At -0.085E ｈ is as follows: The second organic compound has a π-electron deficient heteroaromatic ring.

3. In claim 2, The phenanthroline ring of the first organic compound has an electron-donating group.

4. In claim 1 or claim 3, The phenanthroline ring is a 1,10-phenanthroline ring, and has the electron-donating group at at least one of the 4- and 7-positions.

5. In claim 1 or claim 3, The light-emitting device, wherein the electron-donating group is at least one of an alkyl group, an alkoxy group, an aryloxy group, an alkylamino group, an arylamino group, and a heterocyclic amino group.

6. In any one of claims 1 to 3, The first organic compound has an acid dissociation constant pKa of 8 or more.

7. In any one of claims 1 to 3, The electron injection layer has a spin density of 5×10 as measured by electron spin resonance. １６ spins / cm ３ That's it, light-emitting device.

8. In claim 7, The mixed film containing the metal and the first organic compound has a spin density of 2×10 as measured by electron spin resonance. １６ spins / cm ３ is as follows: The mixed film containing the metal and the second organic compound has a spin density of 2×10 as measured by electron spin resonance. １６ spins / cm ３ A light-emitting device, which is:

9. In any one of claims 1 to 3, The second organic compound has a phenanthroline ring.

10. In any one of claims 1 to 3, The second organic compound has a glass transition temperature of 100° C. or higher.

11. In any one of claims 1 to 3, The light-emitting device, wherein the metal belongs to Group 1, 3, 11 or 13 of the periodic table.

12. In any one of claims 1 to 3, the organic compound layer has a P-type layer between the electron injection layer and the second electrode, the P-type layer includes a third organic compound and a fourth organic compound or a metal oxide; the third organic compound has a hole transport property, the fourth organic compound has at least one of a halogen group and a cyano group.

13. A display device comprising the light-emitting device according to claim 1 and a transistor or a substrate.

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