Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus and a substrate processing method capable of improving uniformity of processing in a main surface of a substrate.SOLUTION: A substrate processing apparatus 1 includes: a processing tank 2 including walls 61, 62, and 53 that partition an internal space in which a processing liquid is stored; a lifter 3 that holds a substrate W and is immersed in the processing liquid; a plurality of processing liquid nozzles 4 that discharge the processing liquid from a plurality of different positions in the processing tank 2 to an internal space of the processing tank 2; a heater 8 including a plurality of heaters 81, 82, and 83 that respectively heat a plurality of different areas of the wall; and a controller 10 that individually controls the discharge of the processing liquid from the plurality of processing liquid nozzles 4 and individually controls outputs of the plurality of heaters 81, 82, and 83. The controller 10 may individually control the outputs of the plurality of heaters 81, 82, and 83 according to a discharge state of the processing liquid from the plurality of processing liquid nozzles 4.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate with a processing liquid. Examples of substrates to be processed include semiconductor wafers, substrates for FPDs (Flat Panel Displays) such as liquid crystal displays and organic EL (Electroluminescence) displays, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells. [Background technology]

[0002] Substrate processing apparatuses that process multiple substrates by immersing them in a processing solution stored in a processing tank have been used for some time, and one example is disclosed in Patent Document 1. The substrate processing apparatus of Patent Document 1 includes a processing tank having an overflow tank formed around the upper periphery of the open-top storage tank, a processing solution circulator, and a substrate transport means. A processing solution is stored in the storage tank, and multiple substrates are immersed in the processing solution. A processing solution inlet / outlet is formed at the bottom of the storage tank, and a processing solution outlet is formed at the bottom of the overflow tank. The processing solution circulator sucks the processing solution from the processing solution outlet of the overflow tank and supplies it to the processing solution inlet / outlet of the storage tank, thereby circulating the processing solution. The substrate transport means is configured with four substrate holders attached horizontally to the lower end of a freely liftable arm, and holds multiple substrates vertically and parallel to each other with a predetermined spacing between them. The transfer arm can lower the substrate holder to immerse multiple substrates in the processing liquid stored in the storage tank, and the transfer arm can raise the substrate holder to remove the multiple substrates from the processing liquid. A rubber heater is attached to the wall of the storage tank. The rubber heater heats the wall of the storage tank, thereby heating the processing liquid inside the storage tank to a predetermined temperature. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-103297 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the prior art of Patent Document 1, the uniformity of processing (for example, uniformity of etching amount) within the main surface of the substrate is not necessarily sufficient, and there is room for improvement.

[0005] Therefore, one embodiment of the present invention provides a substrate processing apparatus and a substrate processing method that can improve the uniformity of processing within the main surface of a substrate. [Means for solving the problem]

[0006] An embodiment of the present invention provides a substrate processing apparatus and a substrate processing method having the following exemplary features.

[0007] 1. A treatment tank having a wall that defines an internal space for storing a treatment liquid; a lifter having a holder for holding a substrate, the lifter immersing the substrate held by the holder in the processing liquid stored in the internal space; a plurality of processing liquid nozzles that eject processing liquids into the internal space from a plurality of different positions within the processing tank; a heater including a plurality of heaters for heating different regions of the wall, respectively; a controller that individually controls the discharge of the processing liquid from the plurality of processing liquid nozzles and individually controls the output of the plurality of heaters.

[0008] This configuration allows for individually controlled discharge of the processing solution from multiple different positions and individually controlled heating of multiple different areas of the processing vessel wall, thereby allowing the processing solution in the processing vessel to act uniformly on each portion of the main surface of the substrate, thereby improving the uniformity of processing across the main surface of the substrate.

[0009] 2. The substrate processing apparatus according to item 1, wherein the controller controls the outputs of the heaters individually in accordance with the discharge state of the processing liquid from the processing liquid nozzles.

[0010] With this configuration, the heating state of multiple different regions of the wall of the processing tank is controlled in accordance with the discharge state of the processing liquid from multiple different positions, thereby realizing an appropriate heating state in accordance with the discharge state of the processing liquid, and therefore, the processing liquid in the processing tank can be made to act uniformly on each part of the main surface of the substrate, thereby improving the uniformity of processing within the main surface of the substrate.

[0011] 3. The substrate processing apparatus described in item 1 or 2, wherein the controller individually controls the output of the plurality of heaters so as to heat the processing liquid in the discharge area (specifically, the area near the discharge port of the processing liquid nozzle) of the processing liquid nozzles that has stopped discharging the processing liquid.

[0012] According to this configuration, the processing liquid in the discharge region of the processing liquid nozzle that has stopped discharging can be heated, so that the temperature of the processing liquid can be locally adjusted by the heater in a region where temperature adjustment by supplying the processing liquid is difficult. This makes it possible to suppress temperature unevenness of the processing liquid in the processing tank, thereby improving processing uniformity across the main surface of the substrate.

[0013] 4. A substrate processing apparatus according to any one of items 1 to 3, wherein the controller individually controls the discharge / stop of the processing liquid from the plurality of processing liquid nozzles, and individually controls the output of the plurality of heaters so that the heat generation amount of the heater closest to the processing liquid nozzle that is discharging the processing liquid is small (for example, power is off), and the heat generation amount of the heater closest to the processing liquid nozzle that is not discharging the processing liquid is large (for example, power is on).

[0014] This configuration reduces the heating by the heater near the processing liquid nozzles that are discharging the processing liquid, and increases the heating by the heater near the processing liquid nozzles that are not discharging the processing liquid. This allows the local heating by the heater to be appropriately controlled according to the degree of temperature adjustment by the supply of processing liquid, thereby suppressing temperature unevenness in the processing bath. This improves the processing uniformity across the main surface of the substrate.

[0015] 5. The wall includes a first side wall and a second side wall facing each other, and a bottom wall; the plurality of heaters include a first sidewall heater that heats the first sidewall, a second sidewall heater that heats the second sidewall, and a bottomwall heater that heats the bottom wall; the plurality of processing liquid nozzles include a first side wall nozzle that discharges a processing liquid from the first side wall toward the interior of the internal space, a second side wall nozzle that discharges a processing liquid from the second side wall toward the interior of the internal space, and a bottom wall nozzle that discharges a processing liquid from the bottom wall toward the interior of the internal space, The controller a first sidewall discharge control for discharging the processing liquid from the first sidewall nozzle and stopping the output of the first sidewall heater; a second sidewall discharge control for discharging the processing liquid from the second sidewall nozzle and stopping the output of the second sidewall heater; and 5. The substrate processing apparatus according to any one of items 1 to 4, wherein at least one of bottom wall discharge control is performed to discharge the processing liquid from the bottom wall nozzle and to stop output of the bottom wall heater.

[0016] In the first sidewall discharge control, the temperature near the first sidewall nozzle is adjusted by the processing liquid discharged from the first sidewall nozzle, so the output of the first sidewall heater is stopped. Furthermore, in the second sidewall discharge control, the temperature near the second sidewall nozzle is adjusted by the processing liquid discharged from the second sidewall nozzle, so the output of the second sidewall heater is stopped. Similarly, in the bottom wall discharge control, the temperature near the bottom wall nozzle is adjusted by the processing liquid discharged from the bottom wall nozzle, so the output of the bottom wall heater is stopped. In this way, the heater output can be appropriately controlled in accordance with the discharge of the processing liquid, thereby improving the uniformity of processing across the main surface of the substrate.

[0017] 6. The substrate processing apparatus described in item 5, wherein the controller stops the discharge of processing liquid from the second side wall nozzle and puts the second side wall heater into a heat generating state when the first side wall discharge control and the bottom wall discharge control are simultaneously executed.

[0018] According to this configuration, the area near the second sidewall nozzle, from which the processing liquid is not discharged, is heated by the second sidewall heater, thereby suppressing temperature variations in the processing liquid in the processing tank and improving processing uniformity across the main surface of the substrate.

[0019] 7. A substrate processing apparatus as described in item 5 or 6, wherein the controller, when performing the bottom wall discharge control, stops the discharge of processing liquid from the first side wall nozzle and the second side wall nozzle, and puts the first side wall heater and the second side wall heater into a heat generating state.

[0020] According to this configuration, the regions near the first sidewall nozzle and the second sidewall nozzle, from which the processing liquid is not discharged, are heated by the first sidewall heater and the second sidewall heater, respectively, thereby suppressing temperature variations in the processing liquid in the processing tank and improving processing uniformity across the main surface of the substrate.

[0021] 8. The wall has a pair of end walls that face each other in an arrangement direction, which is a predetermined horizontal direction, a pair of side walls that face each other in a cross direction, which is a horizontal direction that crosses (typically perpendicular to) the arrangement direction and is connected to the pair of end walls, and a bottom wall that is connected to the pair of end walls and the pair of side walls, the holding unit holds a plurality of substrates in an upright position and arranged in the arrangement direction; the lifter has a back portion connected to the holding portion, and immerses the plurality of substrates in the processing solution in the processing tank with the back portion interposed between the plurality of substrates and a first end wall that is one of the pair of end walls; the plurality of heaters include an end wall heater disposed on the first end wall and a plurality of zone heaters disposed on at least one of the pair of side walls and the bottom wall in each of a plurality of regions divided in the arrangement direction, and the heater does not include a heater disposed on a second end wall, which is the other of the pair of end walls; 8. The substrate processing apparatus according to any one of items 1 to 7, wherein the controller controls outputs of the plurality of zone heaters individually.

[0022] According to this configuration, the processing tank has a pair of end walls, a pair of side walls, and a bottom wall, and a processing liquid is stored in an internal space defined by these walls. Then, by immersing multiple substrates held by the lifter in the processing liquid stored in the processing tank, the multiple substrates can be processed simultaneously with the processing liquid. When the multiple substrates are immersed in the processing liquid, the back of the lifter is interposed between the multiple substrates and the first end wall. More specifically, the back of the lifter is interposed between the first end wall and a substrate of the multiple substrates closest to the first end wall.

[0023] The processing tank is provided with a heater for heating the walls of the processing tank to heat the processing liquid stored therein. Specifically, an end wall heater is provided on a first end wall, which is one of the end walls facing each other in the arrangement direction, and this end wall heater heats the first end wall. Furthermore, multiple zone heaters are arranged in multiple regions divided in the arrangement direction, and each zone heater heats at least one of the walls in which it is located, i.e., the pair of side walls and the bottom wall. While the end wall heater is arranged on the first end wall, no heater is arranged on the second end wall. Therefore, the second end wall is not directly heated by the heater. As a result, the processing liquid stored in the processing tank may have a temperature distribution with a gradient in the arrangement direction.

[0024] Therefore, the zone heater heats at least one of a pair of side walls and a bottom wall in each of the multiple regions divided in the arrangement direction, and these are individually controlled by a controller. This allows for individual control of heating for the multiple regions divided in the arrangement direction, thereby appropriately heating the processing liquid in the processing tank in the region close to the first end wall and the region close to the second end wall. Specifically, a uniform temperature distribution with a small gradient in the arrangement direction can be achieved. This improves the uniformity of processing for multiple substrates.

[0025] The upright position is typically a vertical position in which the main surfaces of the substrates are aligned vertically. The holding portion of the lifter typically holds the substrates in parallel so that the main surfaces of adjacent substrates face each other. Typically, the normal direction of the main surfaces of the substrates is aligned with the arrangement direction.

[0026] The controller may also individually control the end wall heaters. The end wall heaters are typically located on the outer surface of the first end wall. Similarly, the zone heaters are typically located on the outer surface of at least one of the pair of side walls and the bottom wall. No heater is located on the outer surface of the second end wall.

[0027] The number of regions in the arrangement direction is at least two, and preferably three or more. By disposing zone heaters in three or more divided regions and individually controlling them, the temperature distribution of the processing liquid in the arrangement direction can be made more uniform. That is, the walls of the processing tank can be appropriately and individually heated in the region near the first end wall, which is heated by the end wall heater and has a lifter interposed between it and the substrate, the region near the second end wall, which is not heated by the heater, and the intermediate region therebetween.

[0028] 9. The plurality of zone heaters includes a first zone heater disposed in a region of the plurality of regions closest to the first end wall, and a second zone heater disposed in a region of the plurality of regions closest to the second end wall, Item 9. The substrate processing apparatus according to item 8, wherein the controller controls the outputs of the plurality of zone heaters so that the second zone heater generates a larger amount of heat (more specifically, a larger amount of heat per unit length in the arrangement direction) than the first zone heater.

[0029] With this configuration, a larger amount of heat can be supplied to the processing liquid in the processing tank in the region near the second end wall where no end wall heater is disposed than in the region near the first end wall where the end wall heater is disposed, thereby making the temperature distribution of the processing liquid in the arrangement direction more uniform.

[0030] 10. A substrate processing apparatus as described in item 8 or 9, further comprising an outer tank having a storage space for receiving processing liquid overflowing from the processing tank, the storage space having an end space in an area facing the outer surface of the second end wall that is deeper than the depth of the internal space of the processing tank.

[0031] According to this configuration, by overflowing the processing liquid from the processing tank to the outer tank, the processing liquid can be supplied to the processing tank, and the processing liquid in the processing tank can be circulated and replaced while processing multiple substrates. The storage space of the outer tank has an end space in the area facing the outer surface of the second end wall that is substantially equal to or deeper than the depth of the internal space of the processing tank. This end space may, for example, overlap the entire second end wall when viewed in the arrangement direction. Such a deep end space has the advantage of allowing a larger circulation flow rate, for example, when pumping processing liquid from the outer tank and circulating it to the processing tank via a circulation path.

[0032] The circulation path is typically equipped with a pump. By locating the inlet end of the circulation path deep within the storage space of the outer tank, i.e., near the bottom of the end space, it is possible to avoid the inlet end of the circulation path being exposed to the air and resulting in a liquid shortage, even when a high-performance pump is used to increase the circulation flow rate.

[0033] 11. The treatment tank further includes a lid for opening and closing the opening of the treatment tank. Item 11. The substrate processing apparatus according to any one of items 8 to 10, wherein the heater further includes a lid heater disposed on the lid.

[0034] The opening of the processing tank is typically defined by the pair of end walls and the upper edges of the pair of side walls, and the plurality of substrates are loaded and unloaded into and from the internal space of the processing tank by the lifter through this opening. According to the above configuration, the lid of the processing tank is heated by a lid heater disposed on the lid, so that the processing liquid can also be heated from above. This makes it possible to suppress cooling of the processing liquid and further uniformize the temperature distribution of the processing liquid.

[0035] 12. A substrate processing apparatus described in any one of items 8 to 11, wherein at least one of the plurality of zone heaters has a plurality of heater sections divided in the vertical direction, and the controller controls the plurality of heater sections individually.

[0036] This configuration allows the heat generation of the multiple heater sections divided vertically into the zone heater to be individually controlled, thereby achieving uniform temperature distribution of the processing liquid in the vertical direction and achieving uniform processing across the main surface of each substrate.

[0037] 13. Immersing the substrate in a processing liquid stored in a processing tank having a wall that defines an internal space for storing the processing liquid; a discharge control step of individually controlling discharge of the processing solution from a plurality of different positions in the processing tank into the internal space by a controller; a heating control step of individually controlling, by the controller, a plurality of heaters that heat different regions of the wall, respectively.

[0038] 14. One or more of the features described above in relation to the substrate processing apparatus may be combined with this substrate processing method. [Brief explanation of the drawings]

[0039] [Figure 1] FIG. 1 is a conceptual diagram for explaining an example of the configuration of a substrate processing apparatus according to an embodiment of the present invention. [Figure 2] FIG. 2 is a perspective view illustrating an example of the configuration of the lifter. [Figure 3] FIG. 3 is a perspective view illustrating an example of the configuration of the treatment tank. [Figure 4] FIG. 4 is a block diagram for explaining a control system for the end wall heater, the first side wall heater, the second side wall heater, and the bottom wall heater. [Figures 5A-5D] 5A to 5D are diagrams for explaining an example of the relationship between the control of the discharge of the processing liquid from the processing liquid nozzle and the control of the heater (heating control). [Figure 6A] FIG. 6A is a flowchart illustrating an example of the process. [Figure 6B] FIG. 6B is a flowchart illustrating another example of the process. [Figure 7]FIG. 7 is a diagram for explaining a second embodiment of the present invention. [Figure 8] FIG. 8 is a diagram for explaining a third embodiment of the present invention. [Figure 9] FIG. 9 is a diagram for explaining the fourth embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0040] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0041] 1 is a conceptual diagram illustrating an example of the configuration of a substrate processing apparatus according to one embodiment of the present invention. The substrate processing apparatus 1 is a batch-type apparatus that can process a plurality of substrates W (for example, a lot of 25 or 50 substrates) all at once with a processing liquid. In this embodiment, the substrates W are substantially circular substrates. A typical example of a substantially circular substrate W is a semiconductor wafer.

[0042] The substrate processing apparatus 1 includes a processing tank 2 having a processing liquid stored in its internal space for immersing multiple substrates W therein, a lifter 3 that supports the multiple substrates W arranged in a predetermined arrangement direction R1 within the processing tank 2, multiple processing liquid nozzles 4 that supply (more specifically, eject) the processing liquid into the processing tank 2, and a processing liquid supply mechanism 5 that supplies the processing liquid to the multiple processing liquid nozzles 4. The substrate processing apparatus 1 also includes an outer tank 7 (overflow tank) that receives the processing liquid that overflows from the processing tank 2. The substrate processing apparatus 1 also includes a lifter drive mechanism 6 that moves the lifter 3 up and down to immerse the multiple substrates W supported by the lifter 3 in the processing liquid stored in the processing tank 2 or lift the multiple substrates W out of the processing liquid. The substrate processing apparatus 1 also includes a controller 10 for controlling the processing liquid supply mechanism 5, the lifter drive mechanism 6, and the like. The controller 10 includes a processor (CPU) and a storage device, and is configured to perform various control processes described below by the processor executing programs stored in the storage device.

[0043] The processing liquid supply mechanism 5 includes a new liquid supply pipe 12 that supplies unused processing liquid from a processing liquid supply source 11 to the processing tank 2, and a circulation pipe 13 that forms a circulation path that passes through the processing tank 2. An on-off valve 18 is installed in the new liquid supply pipe 12, and the on-off valve 18 is controlled to open and close by a controller 10. One end of the circulation pipe 13 is connected to the bottom of the outer tank 7, and the circulation pipe 13 branches into a plurality of branch pipes 14 that correspond to the plurality of processing liquid nozzles 4, respectively, and the branch pipes 14 are connected to the plurality of processing liquid nozzles 4, respectively.

[0044] A pump 15, an in-line heater 16, and a filter 17 are installed in the circulation pipe 13 between the outer bath 7 and the branching position to the branch pipe section 14, and in this embodiment, they are arranged in this order from the outer bath 7 toward the processing liquid nozzle 4. The pump 15 and the in-line heater 16 are controlled by a controller 10. The pump 15 sends out the processing liquid from the outer bath 7 toward the processing liquid nozzle 4. The in-line heater 16 is an example of a temperature regulator that adjusts the processing liquid passing through the circulation pipe 13 to an appropriate temperature. The filter 17 removes foreign matter from the processing liquid passing through the circulation pipe 13.

[0045] A flow rate adjustment unit 20 is provided in each of the branch pipes 14 connected to the processing liquid nozzles 4, respectively. Each flow rate adjustment unit 20 includes at least an on-off valve and, as necessary, further includes a flow meter, a flow rate adjustment valve, etc. The controller 10 controls the on-off control of the on-off valve of the flow rate adjustment unit 20, thereby controlling whether or not the processing liquid is discharged from the processing liquid nozzle 4. The controller 10 may also control the opening degree of the flow rate adjustment valve provided in the flow rate adjustment unit 20 in accordance with the flow rate measured by the flow meter provided in the flow rate adjustment unit 20, thereby controlling the flow rate of the processing liquid supplied to the processing liquid nozzle 4.

[0046] The processing liquid stored in the processing tank 2 is a chemical liquid or a rinse liquid, typically an etching liquid or other chemical liquid. Examples of chemical liquids include dilute hydrofluoric acid (DHF), hydrofluoric acid (HF), hydrofluoric nitric acid (a mixture of hydrofluoric acid and nitric acid (HNO3)), buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (a mixture of hydrofluoric acid and ethylene glycol), phosphoric acid (H3PO4), sulfuric acid, acetic acid, nitric acid, hydrochloric acid, ammonia water, hydrogen peroxide water, organic acids (e.g., citric acid, oxalic acid), organic alkalis (e.g., tetramethylammonium hydroxide (TMAH)), sulfuric acid-hydrogen peroxide water mixture (SPM), ammonia-hydrogen peroxide water mixture (SC1), hydrochloric acid-hydrogen peroxide water mixture (SC2), isopropyl alcohol (IPA), surfactants, corrosion inhibitors, and hydrophobizing agents. The substrate processing using the chemical liquid may be an etching process or a cleaning process. As an example, the substrate processing apparatus 1 may perform a process of etching a nitride film (silicon nitride film) formed on the main surface of the substrate W with phosphoric acid.

[0047] 2 is a perspective view illustrating an example of the configuration of the lifter 3. The lifter 3 is raised and lowered by a lifter drive mechanism 6 between the processing position shown in FIGS. 1 and 2 and a standby position above the processing tank 2. At the processing position, the plurality of substrates W supported by the lifter 3 are located in the internal space of the processing tank 2 and are therefore immersed in the processing liquid stored in the processing tank 2. At the standby position, the plurality of substrates W supported by the lifter 3 are located outside the processing tank 2 and are therefore pulled up above the processing liquid stored in the processing tank 2.

[0048] In this embodiment, the lifter 3 has a back plate 31 (back portion), a central holding portion 32, and a pair of side holding portions 33. The back plate 31 is a plate-like member extending in the depth direction of the processing tank 2, and in this embodiment, extends vertically along the inner surface of one wall (end wall 51) that constitutes the rectangular parallelepiped processing tank 2. The central holding portion 32 and the pair of side holding portions 33 are an example of holding portions that hold multiple substrates W.

[0049] The central holding unit 32 and the pair of side holding units 33 are connected to the back plate 31 and extend horizontally from the lower part of the back plate 31, extending parallel to each other. The central holding unit 32 and the pair of side holding units 33 are configured to support multiple substrates W aligned in a predetermined arrangement direction R1 so that the main surfaces of adjacent substrates W face each other with a gap between them. In this embodiment, the arrangement direction R1 is the horizontal direction in which the central holding unit 32 and the pair of side holding units 33 extend. In this embodiment, the central holding unit 32 and the pair of side holding units 33 are configured to support multiple substrates W at equal intervals along the arrangement direction R1. When viewed in the arrangement direction R1, the pair of side holding units 33 are arranged on both sides of the central holding unit 32. The central holding unit 32 supports the central lower edge of the substrate W, and the pair of side holding units 33 support the lower edges on the left and right sides of the substrate W. As a result, each substrate W is supported in an upright position (more specifically, an upright position with its main surface aligned vertically). The multiple substrates W are supported by the lifter 3 in an upright position with their main surfaces parallel to one another. In this embodiment, each main surface of the substrates W is substantially perpendicular to the arrangement direction R1. Therefore, the multiple substrates W are supported in a parallel upright position, and the normal direction of the main surface of each substrate W is aligned with the arrangement direction R1.

[0050] As also shown in FIG. 2 , six processing liquid nozzles 4 are provided in this embodiment. Specifically, the multiple processing liquid nozzles 4 include two processing liquid nozzles extending in the arrangement direction R1 along the bottom surface of the processing tank 2, i.e., a first bottom wall nozzle B1 and a second bottom wall nozzle B2. The first bottom wall nozzle B1 and the second bottom wall nozzle B2 are arranged parallel to each other and spaced apart in a horizontal direction perpendicular to the arrangement direction R1. The multiple processing liquid nozzles 4 also include two processing liquid nozzles 4 extending in the arrangement direction R1 along one side wall 61 of the processing tank 2, i.e., a first upper side wall nozzle T1 and a first lower side wall nozzle M1. The first upper side wall nozzle T1 and the first lower side wall nozzle M1 are arranged parallel to each other and spaced apart in the vertical direction. The multiple processing liquid nozzles 4 also include two processing liquid nozzles 4 extending in the arrangement direction R1 along the other side wall 62 of the processing tank 2, i.e., a second upper side wall nozzle T2 and a second lower side wall nozzle M2. The second sidewall upper nozzle T2 and the second sidewall lower nozzle M2 are arranged in parallel with each other and spaced apart in the vertical direction.

[0051] Each processing liquid nozzle 4 is composed of a discharge pipe extending parallel to the arrangement direction R1, with its tip end closed and its base end connected to the tip of a branch pipe section 14 of the circulation pipe 13. In this embodiment, the closed tip end of the processing liquid nozzle 4 is arranged on the side of the back plate 31 of the lifter 3, and the base end connected to the branch pipe section 14 is arranged on the opposite side of the back plate 31.

[0052] The processing liquid nozzle 4 has a plurality of outlets 41 that open at intervals in the arrangement direction R1. The plurality of outlets 41 are aligned along the arrangement direction R1. In this embodiment, the main direction of the processing liquid from each outlet 41 is toward the substrate W, i.e., toward the inside of the internal space of the processing tank 2. The main direction of the processing liquid from each outlet 41 is typically parallel to the main surface of the substrate W, i.e., a direction that intersects (more specifically, is perpendicular to) the arrangement direction R1.

[0053] FIG. 3 is a perspective view illustrating an exemplary configuration of the treatment tank 2. The treatment tank 2 includes a pair of end walls 51, 52 facing each other in the arrangement direction R1, a pair of side walls 61, 62 facing each other in a horizontal direction intersecting the arrangement direction R1 (perpendicular to the arrangement direction in this embodiment) and joined to both side edges of the pair of end walls 51, 52, respectively, and a bottom wall 53 joined to the lower edges of the pair of end walls 51, 52 and the pair of side walls 61, 62. Thus, the treatment tank 2 forms, for example, a rectangular parallelepiped container with an upwardly opening 54, defining an internal space for storing the treatment liquid therein. An outer tank 7 is provided around the treatment tank 2 to receive the treatment liquid overflowing from the treatment tank 2. In this embodiment, the treatment tank 2 and the outer tank 7 are integrally formed and made of, for example, quartz.

[0054] Of the pair of end walls 51, 52, one end wall closer to the back plate 31 (see FIG. 2) of the lifter 3 is referred to as the first end wall 51, and the other end wall is referred to as the second end wall 52. Furthermore, one of the pair of side walls 61, 62 is referred to as the first side wall 61, and the other is referred to as the second side wall 62. An upwardly opening 54 is defined by the first end wall 51, the second end wall 52, and the upper edges of the first side wall 61 and the second side wall 62. The lifter 3 transfers a plurality of substrates W into and out of the processing bath 2 through this opening 54, thereby immersing the substrates W in the processing liquid in the processing bath 2 and lifting the substrates W out of the processing liquid.

[0055] In a plan view, the outer tank 7 defines an annular storage space 70 outside the treatment tank 2 that surrounds the entire periphery of the treatment tank 2. This storage space 70 has a first end space 71, a second end space 72, a first side space 73, and a second side space 74 that face the first end wall 51, the second end wall 52, the first side wall 61, and the second side wall 62, respectively.

[0056] When viewed in the arrangement direction R1, the first end space 71 overlaps with the upper part of the internal space of the treatment tank 2, but does not overlap with the lower part of the internal space of the treatment tank 2. Similarly, when viewed in a horizontal direction perpendicular to the arrangement direction R1, the first side space 73 and the second side space 74 overlap with the upper part of the internal space of the treatment tank 2, but do not overlap with the lower part of the internal space of the treatment tank 2. In other words, the bottom wall 7a of the outer tank 7 is located higher than the bottom wall 53 of the treatment tank 2 in the portion that partitions the first end space 71, the first side space 73, and the second side space 74, and the first end space 71, the first side space 73, and the second side space 74 are shallower than the internal space of the treatment tank 2.

[0057] On the other hand, the second end space 72 overlaps the entire interior space of the treatment tank 2 when viewed in the arrangement direction R1. That is, the bottom wall 7a of the outer tank 7, in the portion defining the second end space 72, is located at the same height as or lower than the bottom wall 53 of the treatment tank 2, and the depth of the second end space 72 is substantially equal to or greater than the depth of the interior space of the treatment tank 2. This allows the storage space 70 of the outer tank 7 to have a large volume in the second end space 72. Accordingly, the widths of the first end space 71, the first side space 73, and the second side space 74 can be reduced, thereby reducing the footprint of the outer tank 7. In this embodiment, the first end space 71, the first side space 73, and the second side space 74 have substantially equal widths, and the second end space 72 has a larger width. This allows the treatment liquid overflowing from the entire periphery of the treatment tank 2 to be collected and guided to the second end space 72, which has a larger volume, for storage.

[0058] The inlet end 13a of the circulation pipe 13 is disposed near the bottom of the second end space 72, and is therefore disposed at a position sufficiently deep below the liquid surface in the outer bath 7. This allows the processing liquid to be discharged from the processing liquid nozzle 4 at a sufficient flow rate while preventing air from flowing into the circulation pipe 13, thereby increasing the processing efficiency (e.g., etching rate) using the processing liquid.

[0059] A heater 8 is provided to heat the processing liquid stored in the processing tank 2. The heater 8 includes an end wall heater 84, a first side wall heater 81, a second side wall heater 82, and a bottom wall heater 83.

[0060] More specifically, an end wall heater 84 is disposed on the outer surface of the first end wall 51 of the treatment tank 2 at a position lower than the bottom wall 7a of the outer tank 7. The end wall heater 84 heats the first end wall 51, thereby heating the treatment liquid in contact with the inner surface of the first end wall 51. Since the outer tank 7 faces the second end wall 52 entirely, no heater is provided to directly heat the second end wall 52.

[0061] Furthermore, a first sidewall heater 81 is disposed on the outer surface of the first sidewall 61 at a position lower than the bottom wall 7a of the outer tank 7. The first sidewall heater 81 heats the first sidewall 61, thereby heating the processing liquid in contact with the inner surface of the first sidewall 61. Similarly, a second sidewall heater 82 is disposed on the outer surface of the second sidewall 62 at a position lower than the bottom wall 7a of the outer tank 7. The second sidewall heater 82 heats the second sidewall 62, thereby heating the processing liquid in contact with the inner surface of the second sidewall 62. Similarly, a bottomwall heater 83 is disposed on the outer surface (lower surface) of the bottom wall 53 of the processing tank 2. The bottom wall heater 83 heats the bottom wall 53, thereby heating the processing liquid in contact with the inner surface (upper surface) of the bottom wall 53.

[0062] As shown in FIG. 1, a lid 55 is provided for opening and closing an opening 54 of the treatment tank 2. The lid 55 includes a first lid member 56 and a second lid member 57. The first lid member 56 is rotatable about a first rotation axis 56a extending horizontally outside the outer tank 7 near the first side wall 61. The second lid member 57 is rotatable about a second rotation axis 57a extending horizontally outside the outer tank 7 near the second side wall 62. In this embodiment, the rotation axes 56a, 57a are parallel to the arrangement direction R1. The first lid member 56 and the second lid member 57 form an automatic cover that opens and closes the opening 54 by rotating about the rotation axes 56a, 57a, respectively, in conjunction with the up and down movement of the lifter 3. That is, when the lifter 3 is in an upper position above the processing tank 2 to hold the substrate W, the first lid member 56 and the second lid member 57 are in an open position to open the opening 54 upward. On the other hand, when the lifter 3 is in a lower position to hold the substrate W in the processing tank 2, the first lid member 56 and the second lid member 57 are in a closed position to close the opening 54 of the processing tank 2. This suppresses temperature changes in the processing liquid in the processing tank 2, allowing stable and efficient substrate processing.

[0063] FIG. 4 is a block diagram for explaining a control system for the end wall heater 84, the first side wall heater 81, the second side wall heater 82, and the bottom wall heater 83. As shown in FIG.

[0064] The end wall heater 84, the first side wall heater 81, the second side wall heater 82, and the bottom wall heater 83 can typically be configured as rubber heaters. A rubber heater includes, for example, a metal heater wire and a silicone cover covering it. Temperature sensors 94, 91, 92, and 93 (typically thermocouples) are disposed in the end wall heater 84, the first side wall heater 81, the second side wall heater 82, and the bottom wall heater 83. The temperature sensors 94, 91, 92, and 93 detect the temperatures of the end wall heater 84, the first side wall heater 81, the second side wall heater 82, and the bottom wall heater 83, respectively. Thus, the temperature sensor 94 indirectly detects the temperature of the first end wall 51 with which the end wall heater 84 contacts. Similarly, temperature sensors 91, 92, and 93 indirectly detect the temperatures of side walls 61, 62 and bottom wall 53 that contact first side wall heater 81, second side wall heater 82, and bottom wall heater 83, respectively.

[0065] The power supply to the end wall heater 84, the first side wall heater 81, the second side wall heater 82, and the bottom wall heater 83 is controlled by a controller 10. Temperature sensors 94, 91, 92, and 93 are connected to the controller 10. The controller 10 controls the output (supply power) of the end wall heater 84, the first side wall heater 81, the second side wall heater 82, and the bottom wall heater 83 based on a predetermined set temperature and temperatures detected by the temperature sensors 94, 91, 92, and 93.

[0066] The set temperatures for the end wall heater 84, the first side wall heater 81, the second side wall heater 82, and the bottom wall heater 83 may be equal to or different from each other. Typically, it is preferable to determine the set temperatures for the end wall heater 84, the first side wall heater 81, the second side wall heater 82, and the bottom wall heater 83 based on a previous experiment or simulation so that the temperature distribution of the processing liquid in the processing tank 2 is uniform (so that variations can be minimized).

[0067] 5A to 5D are diagrams illustrating an example of the relationship between control of the discharge of the processing liquid from the processing liquid nozzles 4 and control (heating control) of the heater 8. The controller 10 individually controls the opening and closing of the on-off valves provided in the flow rate adjustment units 20, thereby individually controlling the discharge of the processing liquid from the multiple processing liquid nozzles 4. Note that FIGS. 5A to 5D do not show the control of the end wall heater 84. For example, in any of the states shown in FIGS. 5A to 5D, the controller 10 energizes the end wall heater 84 and also performs heating by the end wall heater 84.

[0068] 5A, all of the processing liquid nozzles 4 are in a discharge state in which they discharge the processing liquid, and the first side wall heater 81, the second side wall heater 82, and the bottom wall heater 83 are all in a powered state (ON). Therefore, the processing liquid is discharged inward from all of the first side wall 61, the second side wall 62, and the bottom wall 53 while the first side wall 61, the second side wall 62, and the bottom wall 53 are all heated.

[0069] 5B, the first bottom wall nozzle B1 and the second bottom wall nozzle B2 (hereinafter collectively referred to as "bottom wall nozzles B1, B2") are in a discharge state, the first side wall upper nozzle T1 and the first side wall lower nozzle M1 (hereinafter collectively referred to as "first side wall nozzles T1, M1") are in a discharge-stop state, and the second side wall upper nozzle T2 and the second side wall lower nozzle M2 (hereinafter collectively referred to as "second side wall nozzles T2, M2") are also in a discharge-stop state. Meanwhile, with regard to the heater 8, the bottom wall heater 83 is in a non-energized state (off), the first side wall heater 81 is in an energized state (on), and the second side wall heater 82 is also in an energized state (on). Therefore, the controller 10 performs bottom wall discharge control to discharge the processing liquid from the bottom wall nozzles B1, B2 and stop the output of the bottom wall heater 83, while stopping the discharge of the processing liquid from the first side wall nozzles T1, M1 and the second side wall nozzles T2, M2 and putting the first side wall heater 81 and the second side wall heater 82 into a heat generating state. In this way, the processing liquid is discharged inward from the bottom wall 53 while stopping the heating of the bottom wall 53, while the first side wall 61 and the second side wall 62, to which the processing liquid is not discharged, are heated by the side wall heaters 81, 82.

[0070] 5C, the bottom wall nozzles B1 and B2 are in a discharge state, the first side wall nozzles T1 and M1 are in a discharge state, and the second side wall nozzles T2 and M2 are in a discharge-stop state. Meanwhile, with regard to the heater 8, the bottom wall heater 83 is in a non-energized state (OFF), the first side wall heater 81 is in a non-energized state (OFF), and the second side wall heater 82 is in a powered state (ON). Therefore, the controller 10 performs bottom wall discharge control to discharge the processing liquid from the bottom wall nozzles B1 and B2 and stop the output of the bottom wall heater 83, and also performs first side wall discharge control to discharge the processing liquid from the first side wall nozzles T1 and M1 and stop the output of the first side wall heater 81. Meanwhile, the controller 10 stops the discharge of the processing liquid from the second side wall nozzles T2 and M2 and sets the second side wall heater 82 to a heat-generating state. In this way, the processing liquid is ejected inward from the bottom wall 53 while heating of the bottom wall 53 is stopped, and the processing liquid is ejected inward from the first side wall 61 while heating of the first side wall 61 is stopped, while the second side wall 62, onto which the processing liquid is not ejected, is heated by the second side wall heater 82.

[0071] 5D, the bottom wall nozzles B1 and B2 are in a discharge state, the first side wall nozzles T1 and M1 are in a discharge-stop state, and the second side wall nozzles T2 and M2 are in a discharge state. Meanwhile, with regard to the heater 8, the bottom wall heater 83 is in a non-energized state (off), the first side wall heater 81 is in a powered state (on), and the second side wall heater 82 is in a non-energized state (off). Therefore, the controller 10 performs bottom wall discharge control to discharge the processing liquid from the bottom wall nozzles B1 and B2 and stop the output of the bottom wall heater 83, and also performs second side wall discharge control to discharge the processing liquid from the second side wall nozzles T2 and M2 and stop the output of the second side wall heater 82. Meanwhile, the controller 10 stops the discharge of the processing liquid from the first side wall nozzles T1 and M1 and sets the first side wall heater 81 to a heat-generating state. In this way, the processing liquid is ejected inward from the bottom wall 53 while heating of the bottom wall 53 is stopped, and the processing liquid is ejected inward from the second side wall 62 while heating of the second side wall 62 is stopped, while the first side wall 61 onto which the processing liquid is not ejected is heated by the first side wall heater 81.

[0072] In the control states shown in FIGS. 5B to 5D , heater heating is stopped for the wall on which the processing liquid nozzles 4 discharging the processing liquid are arranged, while heater heating is performed for the wall on which the processing liquid nozzles 4 stopped discharging the processing liquid are arranged. Because the processing liquid is supplied in a heated state (typically higher than room temperature) by the inline heater 16, the discharge area of ​​the processing liquid nozzles 4 discharging the processing liquid is heated by the heat of the discharged processing liquid. Therefore, heater heating is stopped for the wall on which the processing liquid nozzles 4 discharging the processing liquid are arranged. On the other hand, since high-temperature processing liquid is not supplied to the vicinity of the processing liquid nozzles 4 stopped discharging the processing liquid, heat from the supplied processing liquid is not supplied. Therefore, heater heating is performed for the wall on which the processing liquid nozzles 4 stopped discharging the processing liquid are arranged. In this way, the temperature distribution in the processing liquid stored in the processing tank 2, more specifically, the temperature distribution in the plane intersecting the arrangement direction R1, is made uniform. This allows the processing liquid at a uniform temperature to come into contact with the main surface of each substrate W, thereby improving the in-plane uniformity of substrate processing.

[0073] FIG. 6A is a flowchart for explaining an example of processing, illustrating an example of control processing by the controller 10. Before the substrate W to be processed is immersed, the controller 10 controls all processing liquid nozzles 4 to be in the discharge state and all heaters 84, 81, 82, and 83 to be in the energized state (steps S1 and S2). From this state, the controller 10 controls the lifter drive mechanism 6 to lower the lifter 3 to the processing position. As a result, the multiple substrates W held by the lifter 3 are immersed in the processing liquid (step S3). Once the substrates W are in the immersed state, the controller 10 waits for a predetermined time (e.g., 5 minutes) required for the temperature of the processing liquid in the processing tank 2 to stabilize (step S4). During this time, the control state (full discharge / full heating state) shown in FIG. 5A is maintained, i.e., all processing liquid nozzles 4 are in the processing liquid discharge state and all heaters 84, 81, 82, and 83 are controlled to be in the energized state (ON).

[0074] When the predetermined time has elapsed (step S4: YES), the controller 10 cyclically switches between the first control state (steps S5 and S6), the second control state (steps S7 and S8), and the third control state (steps S9 and S10). In any of the control states, the end wall heater 84 is controlled to be energized (ON).

[0075] First control state: This is the bottom wall discharge / side wall heating state shown in Figure 5B. The bottom wall nozzles B1 and B2 are controlled to a discharge state, and the first side wall nozzles T1 and M1 and the second side wall nozzles T2 and M2 are controlled to a discharge stop state (step S5). The bottom wall heater 83 is controlled to a non-energized state (off), and the first side wall heater 81 and the second side wall heater 82 are controlled to a powered state (on) (step S6).

[0076] Second control state: This is the bottom wall / first side wall discharge / second side wall heating state shown in Figure 5C. The bottom wall nozzles B1 and B2 are controlled to a discharge state, the first side wall nozzles T1 and M1 are controlled to a discharge state, and the second side wall nozzles T2 and M2 are controlled to a discharge stop state (step S7). The bottom wall heater 83 is controlled to a non-energized state (off), the first side wall heater 81 is controlled to a non-energized state (off), and the second side wall heater 82 is controlled to a powered state (on) (step S8).

[0077] Third control state: This is the bottom wall / second side wall discharge / first side wall heating state shown in Figure 5D. The bottom wall nozzles B1 and B2 are controlled to a discharge state, the first side wall nozzles T1 and M1 are controlled to a discharge stop state, and the second side wall nozzles T2 and M2 are controlled to a discharge state (step S9). The bottom wall heater 83 is controlled to a non-energized state (off), the first side wall heater 81 is controlled to a powered state (on), and the second side wall heater 82 is controlled to a non-energized state (off) (step S10).

[0078] The first control state, the second control state, and the third control state may be executed sequentially and cyclically for at least one cycle (for example, six cycles) for a predetermined time (for example, two minutes) each (step S11). The execution order of the three control states is arbitrary.

[0079] It is also possible to omit the first control state and alternately execute the second control state and the third control state, that is, the discharge of the treatment liquid from the bottom wall nozzles B1 and B2 may not be stopped.

[0080] After performing such cyclical switching control of the discharge / heating state a preset number of cycles (step S11: YES), the controller 10 again controls to the full discharge / full heating state shown in FIG. 5A (steps S12, S13) and maintains that state for a predetermined time (e.g., 3 minutes).

[0081] Thereafter, the controller 10 controls the lifter driving mechanism 6 to raise the lifter 3, and lifts the substrate W held by the lifter 3 above the processing liquid (step S14).

[0082] FIG. 6B is a flowchart for explaining another example of processing, illustrating an example of control processing by the controller 10. Before a substrate W to be processed is immersed, the controller 10 controls all processing liquid nozzles 4 to be in the discharge state and all heaters 84, 81, 82, and 83 to be in the energized state (steps S1 and S2). From this state, the controller 10 controls the lifter drive mechanism 6 to lower the lifter 3 to the processing position. As a result, the multiple substrates W held by the lifter 3 are immersed in the processing liquid (step S3). Once the substrates W are in the immersed state, the controller 10 waits for a predetermined time (e.g., 5 minutes) required for the temperature of the processing liquid in the processing tank 2 to stabilize (step S4). During this time, the control state (full discharge / full heating state) shown in FIG. 5A is maintained, i.e., all processing liquid nozzles 4 are in the processing liquid discharge state and all heaters 84, 81, 82, and 83 are controlled to be in the energized state (ON).

[0083] When the predetermined time has elapsed (step S4: YES), the controller 10 cyclically switches between the first control state (steps S25, S26), the second control state (steps S27, S28), and the third control state (steps S29, S30). In any of the control states, the end wall heater 84 is controlled to be energized (ON).

[0084] First control state: The bottom wall nozzles B1 and B2 are controlled to a discharge state, and the first side wall nozzles T1 and M1 and the second side wall nozzles T2 and M2 are controlled to a discharge stop state (step S25). The bottom wall heater 83 is controlled to a non-energized state (off), and the first side wall heater 81 and the second side wall heater 82 are controlled to a powered state (on) (step S26).

[0085] Second control state: The bottom wall nozzles B1 and B2 are controlled to a discharge-stopped state, the first side wall nozzles T1 and M1 are controlled to a discharge-stopped state, and the second side wall nozzles T2 and M2 are controlled to a discharge-stopped state (step S27). The bottom wall heater 83 is controlled to a powered state (ON), the first side wall heater 81 is controlled to a powered state (OFF), and the second side wall heater 82 is controlled to a powered state (ON) (step S28).

[0086] Third control state: The bottom wall nozzles B1 and B2 are controlled to a discharge-stopped state, the first side wall nozzles T1 and M1 are controlled to a discharge-stopped state, and the second side wall nozzles T2 and M2 are controlled to a discharge state (step S29). The bottom wall heater 83 is controlled to a powered state (ON), the first side wall heater 81 is controlled to a powered state (ON), and the second side wall heater 82 is controlled to a powered state (OFF) (step S30).

[0087] The first control state, the second control state, and the third control state may be executed sequentially and cyclically for at least one cycle (for example, six cycles) for a predetermined time (for example, two minutes) each. The order in which the three control states are executed is arbitrary.

[0088] After performing such cyclical switching control of the discharge / heating state a preset number of cycles (step S11: YES), the controller 10 again controls to the full discharge / full heating state shown in FIG. 5A (steps S12, S13) and maintains that state for a predetermined time (e.g., 3 minutes).

[0089] Thereafter, the controller 10 controls the lifter driving mechanism 6 to raise the lifter 3, and lifts the substrate W held by the lifter 3 above the processing liquid (step S14).

[0090] As described above, the substrate processing apparatus 1 of this embodiment includes a plurality of processing liquid nozzles 4 that respectively discharge processing liquid into the internal space of the processing tank 2 from a plurality of different positions within the processing tank 2, and a heater 8 that includes a plurality of heaters 84, 81, 82, and 83 that respectively heat a plurality of different areas on the wall of the processing tank 2. The controller 10 individually controls the discharge of processing liquid from the plurality of processing liquid nozzles 4 and also individually controls the output of the plurality of heaters 84, 81, 82, and 83. This allows the processing liquid in the processing tank 2 to act uniformly on each portion of the main surface of the substrate W, thereby improving the uniformity of processing across the main surface of the substrate W.

[0091] Furthermore, in this embodiment, the controller 10 individually controls the outputs of the multiple heaters 81, 82, and 83 in accordance with the discharge state of the processing liquid from the multiple processing liquid nozzles 4. This makes it possible to realize an appropriate heating state in accordance with the discharge state of the processing liquid, thereby making it possible to make the processing liquid in the processing tank 2 act uniformly on each part of the main surface of the substrate W, thereby improving the uniformity of processing across the main surface of the substrate W.

[0092] Furthermore, the controller 10 individually controls the outputs of the multiple heaters 81, 82, and 83 so as to heat the processing liquid in the discharge region of the processing liquid nozzle 4 that has stopped discharging the processing liquid among the multiple processing liquid nozzles 4. This allows the processing liquid in the discharge region of the processing liquid nozzle 4 that has stopped discharging to be heated, and therefore the heaters 81, 82, and 83 can locally adjust the temperature of the processing liquid in an area where temperature adjustment by supplying the processing liquid is difficult. This can suppress temperature unevenness of the processing liquid in the processing tank 2, thereby improving the uniformity of processing across the main surface of the substrate W. The discharge region of the processing liquid nozzle 4 refers to the area near the discharge port 41 of the processing liquid nozzle 4.

[0093] The controller 10 also individually controls the discharge / stop of the processing liquid from the multiple processing liquid nozzles 4, and individually controls the outputs of the multiple heaters 81, 82, and 83 so that the heater closest to the processing liquid nozzle 4 that is discharging the processing liquid decreases in heat generation (specifically, stops generating heat) and the heater closest to the processing liquid nozzle 4 that is not discharging the processing liquid increases in heat generation (specifically, enters a heat generating state). This makes it possible to appropriately control local heating by the heaters 81, 82, and 83 depending on the degree of temperature adjustment by the supply of processing liquid, thereby suppressing temperature unevenness in the processing tank 2. This makes it possible to improve the uniformity of processing across the main surface of the substrate W.

[0094] In this embodiment, the multiple heaters include a first sidewall heater 81 that heats the first sidewall 61 of the processing tank 2, a second sidewall heater 82 that heats the second sidewall 62 of the processing tank 2, and a bottom wall heater 83 that heats the bottom wall 53 of the processing tank 2. The multiple processing solution nozzles 4 include first sidewall nozzles T1 and M1 that eject the processing solution from the first sidewall 61 toward the inside of the internal space of the processing tank 2, second sidewall nozzles T2 and M2 that eject the processing solution from the second sidewall 62 toward the inside of the internal space of the processing tank 2, and bottom wall nozzles B1 and B2 that eject the processing solution from the bottom wall 53 toward the inside of the internal space of the processing tank 2. The controller 10 can execute first sidewall ejection control to eject the processing solution from the first sidewall nozzles T1 and M1 and stop the output of the first sidewall heater 81. The controller 10 can also execute second side wall discharge control to discharge the processing liquid from the second side wall nozzles T2 and M2 and stop the output of the second side wall heater 82. The controller 10 can also execute bottom wall discharge control to discharge the processing liquid from the bottom wall nozzles B1 and B2 and stop the output of the bottom wall heater 83.

[0095] In the first sidewall discharge control, the temperature near the first sidewall nozzles T1, M1 is adjusted by the processing liquid discharged from the first sidewall nozzles T1, M1, so the output of the first sidewall heater 81 is stopped. In the second sidewall discharge control, the temperature near the second sidewall nozzles T2, M2 is adjusted by the processing liquid discharged from the second sidewall nozzles T2, M2, so the output of the second sidewall heater 82 is stopped. Similarly, in the bottom wall discharge control, the temperature near the bottom wall nozzles B1, B2 is adjusted by the processing liquid discharged from the bottom wall nozzles B1, B2, so the output of the bottom wall heater 83 is stopped. In this way, the heater output can be appropriately controlled in accordance with the discharge of the processing liquid, thereby improving the uniformity of processing across the main surface of the substrate W.

[0096] 5C , when the first sidewall discharge control and the bottom wall discharge control are simultaneously executed, the controller 10 stops the discharge of the processing liquid from the second sidewall nozzles T2, M2 and puts the second sidewall heater 82 into a heat generating state. Therefore, the area near the second sidewall nozzles T2, M2 from which the processing liquid is not discharged is heated by the second sidewall heater 82. This makes it possible to suppress temperature variations in the processing liquid in the processing tank 2, thereby improving the processing uniformity across the main surface of the substrate W.

[0097] 5B, the controller 10 performs bottom wall discharge control, stops discharge of the processing liquid from the first sidewall nozzles T1, M1 and the second sidewall nozzles T2, M2, and turns on the first sidewall heater 81 and the second sidewall heater 82. Therefore, the areas near the first sidewall nozzles T1, M1 and the second sidewall nozzles T2, M2, from which the processing liquid is not discharged, are heated by the first sidewall heater 81 and the second sidewall heater 82, respectively. This makes it possible to suppress temperature variations in the processing liquid in the processing tank 2, thereby improving processing uniformity across the main surface of the substrate W.

[0098] FIG. 7 is a diagram illustrating a second embodiment of the present invention. In this embodiment, the heater 8 has a different configuration from the previous embodiment. Specifically, the first sidewall heater 81 disposed on the outer surface of the first sidewall 61 includes multiple first sidewall zone heaters 81A, 81B, and 81C. The multiple first sidewall zone heaters 81A, 81B, and 81C heat the first sidewall 61 in each of multiple regions divided in the arrangement direction R1, thereby heating the processing liquid in contact with the inner surface of the first sidewall 61. Similarly, the second sidewall heater 82 disposed on the outer surface of the second sidewall 62 includes multiple second sidewall zone heaters 82A, 82B, and 82C. The multiple second sidewall zone heaters 82A, 82B, and 82C heat the second sidewall 62 in each of multiple regions divided in the arrangement direction R1, thereby heating the processing liquid in contact with the inner surface of the second sidewall 62. Similarly, the bottom wall heater 83 disposed on the outer surface (lower surface) of the bottom wall 53 of the processing tank 2 includes a plurality of bottom wall zone heaters 83A, 83B, and 83C. The bottom wall zone heaters 83A, 83B, and 83C heat the bottom wall 53 in each of a plurality of regions divided in the arrangement direction R1, thereby heating the processing liquid in contact with the inner surface (upper surface) of the bottom wall 53.

[0099] In this embodiment, the arrangement areas of the plurality of first sidewall zone heaters 81A, 81B, 81C, the plurality of second sidewall zone heaters 82A, 82B, 82C, and the plurality of bottom wall zone heaters 83A, 83B, 83C are divided at the same positions in the arrangement direction R1. The first sidewall zone heaters 81A, 81B, 81C, the second sidewall zone heaters 82A, 82B, 82C, and the bottom wall zone heaters 83A, 83B, 83C at the same positions in the arrangement direction R1 respectively constitute a plurality of strip-shaped zone heaters 85A, 85B, 85C. Therefore, a plurality of zone heaters 85A, 85B, 85C that heat a pair of sidewalls 61, 62 and a bottom wall 53 are provided in each of the plurality of areas divided in the arrangement direction R1. In this embodiment, a plurality of (three in the illustrated example) zone heaters 85A, 85B, and 85C are arranged in a plurality of equally divided regions (three regions in the illustrated example) in the arrangement direction R1. Therefore, the widths of the plurality of zone heaters 85A, 85B, and 85C in the arrangement direction R1 are substantially equal.

[0100] Temperature sensors 94, 91A, 91B, 91C, 92A, 92B, 92C, 93A, 93B, 93C (typically thermocouples) are disposed in the end wall heater 84, the first side wall zone heaters 81A, 81B, 81C, the second side wall zone heaters 82A, 82B, 82C, and the bottom wall zone heaters 83A, 83B, 83C, respectively. The temperature sensors 94, 91A, 91B, 91C, 92A, 92B, 92C, 93A, 93B, 93C detect the temperatures of the end wall heater 84, the first side wall zone heaters 81A, 81B, 81C, the second side wall zone heaters 82A, 82B, 82C, and the bottom wall zone heaters 83A, 83B, 83C, respectively. As a result, temperature sensor 94 indirectly detects the temperature of first end wall 51 that contacts end wall heater 84. Similarly, temperature sensors 91A, 91B, and 91C indirectly detect the temperature of first side wall 61 at their contact positions, temperature sensors 92A, 92B, and 92C indirectly detect the temperature of second side wall 62 at their contact positions, and temperature sensors 93A, 93B, and 93C indirectly detect the temperature of bottom wall 53 at their contact positions.

[0101] The supply of electricity to the end wall heater 84, the first side wall zone heaters 81A, 81B, 81C, the second side wall zone heaters 82A, 82B, 82C, and the bottom wall zone heaters 83A, 83B, 83C is controlled by a controller 10. Temperature sensors 94, 91A, 91B, 91C, 92A, 92B, 92C, 93A, 93B, 93C are connected to the controller 10. The controller 10 controls the output (supply power) of the end wall heater 84, the first side wall zone heaters 81A, 81B, 81C, the second side wall zone heaters 82A, 82B, 82C and the bottom wall zone heaters 83A, 83B, 83C based on a predetermined set temperature and the detected temperatures detected by the temperature sensors 94, 91A, 91B, 91C, 92A, 92B, 92C, 93A, 93B, 93C.

[0102] The set temperatures for the end wall heater 84, the first side wall zone heaters 81A, 81B, 81C, the second side wall zone heaters 82A, 82B, 82C, and the bottom wall zone heaters 83A, 83B, 83C may be equal to or different from each other. Typically, it is preferable to determine the set temperatures for the end wall heater 84, the first side wall zone heaters 81A, 81B, 81C, the second side wall zone heaters 82A, 82B, 82C, and the bottom wall zone heaters 83A, 83B, 83C based on a previous experiment or simulation so that the temperature distribution of the processing liquid in the processing tank 2 in the arrangement direction R1 is uniform (so that variations are minimized).

[0103] To uniformize the temperature of the processing liquid in the processing tank 2 in the arrangement direction R1, the controller 10 controls the multiple zone heaters 85A, 85B, and 85C so that the zone heater 85C (second zone heater: first sidewall zone heater 81C, second sidewall zone heater 82C, and bottom wall zone heater 83C) closest to the second end wall 52 generates a larger amount of heat (more specifically, the amount of heat generated per unit length in the arrangement direction R1) than the zone heater 85A (first zone heater: first sidewall zone heater 81A, second sidewall zone heater 82A, and bottom wall zone heater 83A) closest to the first end wall 51. This is because the first end wall 51 is heated by the end wall heater 84, while no heater is provided on the second end wall 52. Therefore, the zone heater 85C closer to the second end wall 52 should supply a larger amount of heat to the processing liquid than the zone heater 85A closer to the first end wall 51. For example, the set temperature of the zone heater 85A (first zone heater) closest to the first end wall 51 may be set to a first temperature, and the set temperature of the zone heater 85C (second zone heater) closest to the second end wall 52 may be set to a second temperature higher than the first temperature. By appropriately setting the first temperature and the second temperature, the temperatures of the treatment liquid in the regions close to the first end wall 51 and the second end wall 52 in the treatment tank 2 can be made approximately equal.

[0104] As described above, according to this embodiment, by immersing the substrates W held by the lifter 3 in the processing liquid stored in the processing tank 2, the substrates W can be collectively processed with the processing liquid. With the substrates W immersed in the processing liquid, the back plate 31 (rear portion) of the lifter 3 is interposed between the substrates W and the first end wall 51. The processing tank 2 is provided with heaters 8 (end wall heater 84 and zone heaters 85A, 85B, 85C) for heating the walls that constitute the processing tank 2, thereby heating the processing liquid stored therein. Specifically, the end wall heater 84 is provided for heating the first end wall 51, which is one of the end walls facing each other in the arrangement direction R1. In addition, the processing tank 2 is provided with multiple zone heaters 85A, 85B, 85C for heating at least one of the pair of side walls 61, 62 and the bottom wall 53.

[0105] While an end wall heater 84 is provided to heat the first end wall 51, no heater is provided to the second end wall 52. Therefore, the processing liquid stored in the processing tank 2 may have a temperature distribution with a gradient along the arrangement direction R1. Therefore, the zone heaters 85A, 85B, and 85C heat at least one of the pair of side walls 61 and 62 and the bottom wall 53 in each of the multiple regions divided along the arrangement direction R1, and are individually controlled by the controller 10 (heater control unit). This allows for individual adjustment of heating for the multiple regions divided along the arrangement direction R1, thereby appropriately heating the processing liquid in the processing tank 2 in the region near the first end wall 51 and the region near the second end wall 52. Specifically, a uniform temperature distribution with a small gradient along the arrangement direction R1 can be achieved. This improves the uniformity of processing for multiple substrates W.

[0106] More specifically, in this embodiment, the controller 10 controls the outputs of the multiple zone heaters 85A, 85B, and 85C so that the zone heater 85C (second zone heater) closest to the second end wall 52 generates a larger amount of heat than the zone heater 85A (first zone heater) closest to the first end wall 51. This allows a larger amount of heat to be supplied to the processing liquid in the processing tank 2 in the region close to the second end wall 52, where no heater is located, than in the region close to the first end wall 51, where the end wall heater 84 is located. This allows the temperature distribution of the processing liquid in the arrangement direction R1 to be made uniform.

[0107] In this embodiment, the processing tank 2 is divided into three regions in the arrangement direction R1, and the zone heaters 85A, 85B, and 85C are arranged in each of these regions and controlled individually. Therefore, the walls of the processing tank 2 can be appropriately and individually heated in the region near the first end wall 51, which is heated by the end wall heater 84 and where the back plate 31 of the lifter 3 is interposed between the first end wall 51 and the substrate W, the region near the second end wall 52 where no heater is arranged, and the intermediate region therebetween. This allows for a uniform temperature distribution in the arrangement direction R1. Of course, the number of regions divided in the arrangement direction R1 may be two, four, or more. The more divisions there are, the easier it is to achieve a uniform temperature distribution. However, this increases the complexity of the configuration and control of the controller 10 and the wiring process. Therefore, it is preferable to select a necessary and sufficient number of divisions.

[0108] In this embodiment, the controller 10 also individually controls the end wall heaters 84. This makes it possible to make the temperature distribution of the processing liquid in the arrangement direction R1 more uniform.

[0109] In this embodiment, an outer tank 7 is provided to receive processing liquid overflowing from the processing tank 2. This allows the processing liquid to overflow from the processing tank 2 into the outer tank 7, supplying the processing liquid to the processing tank 2 and circulating and replacing the processing liquid therein, thereby processing multiple substrates W. The storage space 70 of the outer tank 7 has a second end space 72 facing the outer surface of the second end wall 52 and having a depth equal to or greater than the depth of the internal space of the processing tank 2. That is, the depth of the second end space 72 is substantially equal to or greater than the depth of the internal space of the processing tank 2. In this embodiment, the second end space 72 overlaps the entire second end wall 52 when viewed in the arrangement direction R1. Providing such a deep second end space 72 has the advantage of increasing the circulation flow rate when the processing liquid is sucked out of the outer tank 7 and circulated to the processing tank 2 via the circulation pipe 13. Specifically, when a high-capacity pump 15 is used to increase the circulation flow rate, by positioning the inlet end 13a of the circulation pipe 13 at the bottom of the deep second end space 72, it is possible to avoid the inlet end 13a of the circulation pipe 13 being exposed to the air and running out of liquid.

[0110] On the other hand, because the second end space 72 facing the second end wall 52 is provided, a heater cannot be disposed on the outer surface of the second end wall 52. As a result, a gradient in the temperature distribution of the processing liquid in the processing tank 2 in the arrangement direction R1 may occur. Therefore, in this embodiment, multiple zone heaters 85A, 85B, and 85C are disposed in multiple regions divided in the arrangement direction R1, and the multiple zone heaters 85A, 85B, and 85C are individually controlled. This suppresses the temperature gradient in the arrangement direction R1, thereby achieving a uniform temperature distribution of the processing liquid in the processing tank 2.

[0111] FIG. 8 illustrates a third embodiment of the present invention, showing modified zone heaters 85A, 85B, and 85C. In this embodiment, each of the first sidewall zone heaters 81A, 81B, and 81C has multiple heater sections 81a, 81b, and 81c divided vertically. Similarly, each of the second sidewall zone heaters 82A, 82B, and 82C has multiple heater sections 82a, 82b, and 82c divided vertically. The controller 10 individually controls the multiple heater sections 81a, 81b, and 81c; 82a, 82b, and 82c. This allows for uniform temperature distribution in the processing liquid not only in the arrangement direction R1 but also in the vertical direction. This not only allows for uniform processing of multiple substrates W, but also for uniform processing across the main surface of each substrate W.

[0112] In the example shown in FIG. 8, the number of divisions in the vertical direction is three, but this number of divisions may be two, or may be four or more.

[0113] In addition, in the example shown in Figure 8, all of the first side wall zone heaters 81A, 81B, 81C and all of the second side wall zone heaters 82A, 82B, 82C are divided in the vertical direction, but only some of the side wall zone heaters (for example, the first side wall zone heater 81B and the second side wall zone heater 82B in the central region with respect to the arrangement direction R1) may be divided in the vertical direction.

[0114] FIG. 9 is a diagram illustrating a fourth embodiment of the present invention. In this embodiment, a first lid heater 86 and a second lid heater 87 are disposed on the first lid member 56 and the second lid member 57, respectively. The first lid heater 86 and the second lid heater 87 are individually controlled by the controller 10, independently of the end wall heater 84, the first side wall heater 81, the second side wall heater 82, and the bottom wall heater 83. The first lid heater 86 and the second lid heater 87 heat the processing liquid in the processing tank 2 from above, thereby achieving a more uniform temperature distribution in the processing liquid. In particular, since no heater is disposed in the outer tank 7, the temperature in the upper region of the processing tank 2 is likely to drop. Therefore, heating from above by the first lid heater 86 and the second lid heater 87 effectively contributes to a more uniform temperature distribution. In this way, by heating the lid 55 of the processing tank 2, the processing liquid can be heated from above as well, which makes it possible to suppress cooling of the processing liquid and to make the temperature distribution of the processing liquid more uniform.

[0115] The features of this embodiment can also be combined with the second and third embodiments described above.

[0116] Although the embodiment of the present invention has been described above, the present invention can also be embodied in other forms.

[0117] For example, in the above embodiment, an example of controlling the heater to be turned on / off has been described. The power to be supplied may be varied stepwise or continuously to control the amount of heat generated by the heater stepwise or continuously.

[0118] The number and arrangement of the processing liquid nozzles 4 in the above-described embodiment are merely examples. The main ejection direction of the processing liquid from the processing liquid nozzles 4 does not necessarily have to be directed toward the substrate W. For example, the main ejection direction of the bottom wall nozzles B1, B2 may be directed toward the center of the bottom wall 53 along a direction parallel to the main surface of the substrate W, thereby forming an upward flow of the processing liquid (upflow) from the bottom wall 53 in the processing tank 2.

[0119] In addition, various design modifications can be made within the scope of the claims. [Explanation of symbols]

[0120] 1: Substrate processing equipment 2: Treatment tank 3: Lifter 4: Processing liquid nozzle 7: Outer tank 8: Heater 10: Controller 31: Back plate 32: Central holding part 33: Side holding part 41:Discharge port 51: First end wall 52: Second end wall 53: Bottom wall 54 :Aperture 55: Lid 56: First cover member 57: Second cover member 61: First side wall 62: Second side wall 70: Storage space 71: First end space 72: Second end space 73: First side space 74: Second side space 81: Side wall heater 81: First side wall heater 81A: 1st side wall zone heater 81B: First side wall zone heater 81C: 1st side wall zone heater 81a: Heater part 81b: Heater part 81c: Heater part 82: Second side wall heater 82A: Second sidewall zone heater 82B: Second side wall zone heater 82C: Second sidewall zone heater 82a: Heater part 82b: Heater part 82c: Heater part 83: Bottom wall heater 83A: Bottom wall zone heater 83B: Bottom wall zone heater 83C: Bottom wall zone heater 84: End wall heater 85A: Zone heater 85B: Zone heater 85C: Zone heater 86: First lid heater 87: Second lid heater B1: 1st bottom wall nozzle (bottom wall nozzle) B2: Second bottom wall nozzle (bottom wall nozzle) T1: First side wall upper nozzle (first side wall nozzle) M1: First sidewall lower nozzle (first sidewall nozzle) T2: Second side wall upper nozzle (second side wall nozzle) M2: Second sidewall lower nozzle (second sidewall nozzle) R1: Array direction W: Substrate

Claims

1. a treatment tank having a wall that defines an internal space for storing a treatment liquid; a lifter having a holder for holding a substrate, the lifter immersing the substrate held by the holder in the processing liquid stored in the internal space; a plurality of processing liquid nozzles that eject processing liquids into the internal space from a plurality of different positions within the processing tank; a heater including a plurality of heaters for heating different regions of the wall, respectively; a controller that individually controls the discharge of the processing liquid from the plurality of processing liquid nozzles and individually controls the output of the plurality of heaters.

2. The substrate processing apparatus according to claim 1 , wherein the controller controls outputs of the plurality of heaters individually in accordance with a discharge state of the processing liquid from the plurality of processing liquid nozzles.

3. 2 . The substrate processing apparatus according to claim 1 , wherein the controller individually controls outputs of the heaters so as to heat the processing liquid in a discharge region of a processing liquid nozzle that has stopped discharging the processing liquid, among the processing liquid nozzles.

4. 2. The substrate processing apparatus according to claim 1, wherein the controller individually controls the discharge / stop of the processing liquid from the plurality of processing liquid nozzles, and individually controls the output of the plurality of heaters so that the heat generation amount of the heater closest to the processing liquid nozzle that is discharging the processing liquid is small and the heat generation amount of the heater closest to the processing liquid nozzle that is not discharging the processing liquid is large.

5. The wall includes a first side wall and a second side wall facing each other, and a bottom wall; the plurality of heaters include a first sidewall heater that heats the first sidewall, a second sidewall heater that heats the second sidewall, and a bottomwall heater that heats the bottom wall; the plurality of processing liquid nozzles include a first side wall nozzle that discharges a processing liquid from the first side wall toward the interior of the internal space, a second side wall nozzle that discharges a processing liquid from the second side wall toward the interior of the internal space, and a bottom wall nozzle that discharges a processing liquid from the bottom wall toward the interior of the internal space, The controller a first sidewall discharge control for discharging the processing liquid from the first sidewall nozzle and stopping the output of the first sidewall heater; a second sidewall discharge control for discharging the processing liquid from the second sidewall nozzle and stopping the output of the second sidewall heater; and 2. The substrate processing apparatus according to claim 1, further comprising: a bottom wall discharge control for discharging the processing liquid from the bottom wall nozzle and stopping output of the bottom wall heater.

6. 6. The substrate processing apparatus of claim 5, wherein the controller stops the discharge of the processing liquid from the second sidewall nozzle and puts the second sidewall heater into a heat generating state when the first sidewall discharge control and the bottom wall discharge control are simultaneously performed.

7. 6. The substrate processing apparatus of claim 5, wherein the controller, when performing the bottom wall discharge control, stops the discharge of the processing liquid from the first side wall nozzle and the second side wall nozzle, and causes the first side wall heater and the second side wall heater to generate heat.

8. The wall has a pair of end walls that face each other in an arrangement direction, which is a predetermined horizontal direction; a pair of side walls that face each other in a cross direction, which is a horizontal direction that crosses the arrangement direction, and are connected to the pair of end walls; and a bottom wall that is connected to the pair of end walls and the pair of side walls, the holding unit holds a plurality of substrates in an upright position and arranged in the arrangement direction; the lifter has a back portion connected to the holding portion, and immerses the plurality of substrates in the processing solution in the processing tank with the back portion interposed between the plurality of substrates and a first end wall that is one of the pair of end walls; the plurality of heaters include an end wall heater disposed on the first end wall and a plurality of zone heaters disposed on at least one of the pair of side walls and the bottom wall in each of a plurality of regions divided in the arrangement direction, and the heater does not include a heater disposed on a second end wall, which is the other of the pair of end walls; 8. The substrate processing apparatus according to claim 1, wherein the controller controls outputs of the plurality of zone heaters individually.

9. the plurality of zone heaters include a first zone heater disposed in a region of the plurality of regions closest to the first end wall, and a second zone heater disposed in a region of the plurality of regions closest to the second end wall, The substrate processing apparatus according to claim 8 , wherein the controller controls outputs of the plurality of zone heaters so that the second zone heater generates more heat than the first zone heater.

10. 9. The substrate processing apparatus of claim 8, further comprising an outer tank having a storage space for receiving processing liquid overflowing from the processing tank, the storage space having an end space in an area facing the outer surface of the second end wall that is deeper than the depth of the internal space of the processing tank.

11. Further comprising a lid for opening and closing the opening of the treatment tank; The substrate processing apparatus of claim 8 , wherein the heater further comprises a lid heater disposed on the lid.

12. 9. The substrate processing apparatus according to claim 8, wherein at least one of the plurality of zone heaters has a plurality of heater sections divided in a vertical direction, and the controller controls the plurality of heater sections individually.

13. Immersing the substrate in a processing liquid stored in a processing tank having a wall that defines an internal space for storing the processing liquid; a discharge control step of individually controlling discharge of the processing solution from a plurality of different positions in the processing tank into the internal space by a controller; a heating control step of individually controlling, by the controller, a plurality of heaters that heat different regions of the wall, respectively.

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