Light-emitting device

Abstract

To provide a light-emitting device in which transistors constituting a pixel driving circuit are arranged in a smaller region.SOLUTION: One embodiment is a light-emitting device in which gates of driving transistors of adjacent subpixels are arranged so as not to overlap in a first direction, and also in subpixels adjacent to the subpixels in a second direction, gates of driving transistors are arranged so as not to overlap in the first direction.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present disclosure relates to a light-emitting device, for example, a light-emitting device having an organic EL element. [Background technology]

[0002] Patent Document 1 discloses a display device having a drive circuit array substrate including drive circuits arranged in an array on a semiconductor substrate, and light-emitting elements arranged in an array above the drive circuits and driven by the drive circuits. Patent Document 1 discloses that well taps on the substrate are provided in some of the drive circuits to increase the definition of the drive circuit array. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2022-16421 Summary of the Invention [Problem to be solved by the invention]

[0004] As pixels in light-emitting devices become smaller, there is a demand for transistors that make up pixel drive circuits to be arranged in smaller areas. However, Patent Document 1 does not consider the arrangement of transistors at all. [Means for solving the problem]

[0005] One aspect of this embodiment includes a plurality of pixels, each having a plurality of subpixels, the plurality of pixels including a first pixel and a second pixel adjacent to each other in a first direction, and a third pixel and a fourth pixel adjacent to each other in the first direction, the first pixel and the second pixel adjacent to the third pixel and the fourth pixel in a second direction intersecting the first direction, and each of the plurality of subpixels includes a light-emitting element arranged on a main surface of a substrate, a drive transistor connected to the light-emitting element, a write transistor connected to the drive transistor, and a first capacitor element arranged between a gate and one of a source or a drain of the drive transistor, the plurality of subpixels including a first subpixel and a second subpixel, In each of the light-emitting devices, the gate of the drive transistor in a planar view with respect to the main surface is larger than the gate of the write transistor in the planar view, the first sub-pixel of the first pixel and the second sub-pixel of the second pixel are adjacent to each other in the first direction, the first sub-pixel of the third pixel and the second sub-pixel of the fourth pixel are adjacent to each other in the first direction, the gate of the drive transistor of the first sub-pixel of the first pixel and the gate of the drive transistor of the second sub-pixel of the second pixel do not overlap each other in the first direction, and the gate of the drive transistor of the first sub-pixel of the third pixel and the gate of the drive transistor of the second sub-pixel of the fourth pixel do not overlap each other in the first direction. [Effects of the Invention]

[0006] By miniaturizing the pixel drive circuit of the light emitting device, it is possible to realize a light emitting device with high definition and miniaturization. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a system diagram illustrating an example of a part of a light-emitting device according to an embodiment. [Figure 2] 1 is a circuit diagram of an example of a subpixel of a light-emitting device according to an embodiment; [Figure 3] 1 is a plan view of an example of a transistor according to an embodiment of the present invention; [Figure 4] 1 is a plan view of an example of a part of a light emitting device according to Embodiment 1; [Figure 5] FIG. 10 is a plan view of an example of a part of a light-emitting device according to a second embodiment; [Figure 6] 10 is a circuit diagram of an example of a subpixel of a light-emitting device according to a third embodiment. [Figure 7] 10 is a plan view of an example of a part of a light emitting device according to a third embodiment; [Figure 8] 10 is a circuit diagram of an example of a subpixel of a light-emitting device according to a fourth embodiment. [Figure 9] 10 is a plan view of an example of a part of a light emitting device according to a fourth embodiment; [Figure 10] FIG. 1 is a plan view illustrating an example of an outer edge of a subpixel in an upper layer of a light-emitting device according to an embodiment. [Figure 11] 10 is a cross-sectional view of an example of a part of a light-emitting device according to a fourth embodiment. [Figure 12] FIG. 11 is a schematic cross-sectional view illustrating an example of a pixel of a display device according to a fifth embodiment. [Figure 13] FIG. 13 is a schematic diagram illustrating an example of a display device according to a fifth embodiment. [Figure 14] 10(a) is a schematic diagram illustrating an example of an imaging device according to embodiment 5. FIG. 10(b) is a schematic diagram illustrating an example of an electronic device according to embodiment 5. [Figure 15] 1A is a schematic diagram illustrating an example of a display device according to an embodiment, and FIG. 1B is a schematic diagram illustrating an example of a foldable display device. [Figure 16] 1A and 1B are schematic diagrams illustrating an example of a wearable device according to an embodiment, each of which has an imaging device; DETAILED DESCRIPTION OF THE INVENTION

[0008] The light emitting device according to the present embodiment will be described below with reference to the drawings. Note that the following embodiments are merely examples of the present embodiment, and the present invention is not limited to the numerical values, shapes, materials, components, arrangement and connection of the components, etc.

[0009] [Embodiment 1] In the following, a case will be described in which a driving transistor is connected to an electrode (here, an anode) of an organic light-emitting element, which is an example of a light-emitting element, and all the transistors are P-type transistors; however, the light-emitting device of this embodiment is not limited to this. The polarities and conductivity types may all be reversed, or some may be reversed. For example, the driving transistor may be a P-type transistor and the other transistors may be N-type transistors, and the supplied potential and connections may be changed appropriately according to the conductivity type and polarity. Furthermore, parts with the same reference numerals in each drawing indicate the same portion or parts having similar functions.

[0010] Fig. 1 is a system diagram showing an outline of an example of a part of a light-emitting device according to the present embodiment. As shown in Fig. 1, an organic EL display device, which is an example of a light-emitting device 100, has a pixel array section 103 and a drive section arranged around the pixel array section 103. The pixel array section 103 has a plurality of pixels 101 arranged two-dimensionally in a matrix, and each pixel 101 has a plurality of sub-pixels 102.

[0011] Here, an example is shown in which one pixel 101 has a first subpixel 102A, a second subpixel 102B, and a third subpixel 102C disposed between the first subpixel 102A and the second subpixel 102B. In this specification, when a member or part is referred to collectively, a reference number is used, and when a specific member or part is referred to separately, a letter such as A or B is added after the reference number.

[0012] The driving unit is a circuit for driving each pixel 101 (sub-pixel 102). For example, the driving unit includes a vertical scanning circuit 104 and a signal output circuit 105. In the pixel array unit 103, a first scanning line 106 is arranged for each pixel row along the row direction. Furthermore, a signal line 107 is arranged for each pixel column along the column direction.

[0013] The first scanning lines 106 are connected to output terminals of corresponding rows in the vertical scanning circuit 104. The signal lines 107 are connected to output terminals of the signal output circuit 105. The vertical scanning circuit 104 supplies a write control signal to the first scanning lines 106 when writing a video signal to each pixel 101 (sub-pixel 102) in the pixel array section 103. The signal output circuit 105 outputs a luminance signal having a voltage corresponding to digital display data supplied from the outside.

[0014] Fig. 2 is a circuit diagram of an example of a subpixel 102 included in the light-emitting device of Fig. 1. As shown in Fig. 2, the subpixel 102 includes a light-emitting element 200 such as an organic light-emitting element, a drive transistor 201, a writing transistor 203, and a capacitor 205. The light-emitting element 200 includes an organic layer including a light-emitting layer between an anode and a cathode. In addition to the light-emitting layer, the organic layer may include one or more of a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer, as appropriate.

[0015] The drive transistor 201 and the write transistor 203 are each a MOSFET, and a control signal is input to the gate of the write transistor 203 via the scanning line 106b. The source of the drive transistor is connected to a power supply wiring 207 (first power supply wiring) that supplies a power supply potential Vdd. One electrode (here, the cathode) of the light emitting element 200 is connected to a power supply wiring 208 that supplies a power supply potential Vss.

[0016] The signal line 107 is connected to the source of the write transistor 203 , and the moment the write transistor 203 is turned on, the voltage value of the signal line 107 is input to the gate of the drive transistor 201 .

[0017] The source-drain current value of the driving transistor 201 is determined depending on this signal voltage, thereby controlling the light emission brightness of the light emitting element 200. The drain of the driving transistor 201 is connected to the anode of the light emitting element 200. In addition, a capacitive element 205 (first capacitive element) is connected between the gate and source of the driving transistor 201.

[0018] That is, in this embodiment, each subpixel 102 has a light-emitting element 200 arranged on the main surface of the substrate and a driving transistor 201 connected to the light-emitting element 200. The subpixel 102 also has a writing transistor 203 connected to the driving transistor 201, and a capacitance element 205 (first capacitance element) arranged between the gate and one of the source or drain (here, the source) of the driving transistor 201.

[0019] The definition of a gate in this specification will be explained using FIG. 3. FIG. 3 is a top view of a MOSFET, which is an example of a transistor. In this specification, gate 125 refers to a portion where conductive layer 123 constituting gate 125 and active region 124 of the transistor overlap in a plan view of the main surface of the substrate (the surface on which light-emitting element 200 is arranged). Conductive layer 123 constituting the gate can be formed using, for example, polysilicon. Furthermore, a semiconductor substrate can be used as the substrate. Furthermore, wiring, electrodes, semiconductor substrate, etc. may be connected via contact plugs CP as appropriate.

[0020] 4 shows a plan view of transistors included in a part of the pixel array section 103 in this embodiment. The pixel array section 103 has a plurality of pixels 101. The plurality of pixels 101 includes a first pixel 160 and a second pixel 170 adjacent to each other in a first direction X, and a third pixel 180 and a fourth pixel 190 adjacent to each other in the first direction X.

[0021] The first pixel 160 and the second pixel 170 are adjacent to the third pixel 180 and the fourth pixel 190 in a second direction Y that intersects with the first direction X. Here, an example is shown in which the first direction X and the second direction Y intersect perpendicularly, but the arrangement of the pixels 101 in this embodiment is not limited to this.

[0022] The first pixel 160, the second pixel 170, the third pixel 180, and the fourth pixel 190 each have a first sub-pixel, a second sub-pixel, and a third sub-pixel, respectively. Descriptions of similar parts of the sub-pixels within these pixels will be omitted where appropriate.

[0023] The first pixel 160 has a first subpixel 6102A, a second subpixel 6102B, and a third subpixel 6102C, the second pixel 170 has a first subpixel 7102A, a second subpixel 7102B, and a third subpixel 7102C, the third pixel 180 has a first subpixel 8102A, a second subpixel 8102B, and a third subpixel 8102C, and the fourth pixel 190 has a first subpixel 9102A, a second subpixel 9102B, and a third subpixel 9102C.

[0024] Here, the first subpixel 6102A of the first pixel 160 and the second subpixel 7102B of the second pixel 170 are adjacent to each other, and the first subpixel 8102A of the third pixel 180 and the second subpixel 9102B of the fourth pixel 190 are adjacent to each other.

[0025] The following description will be mainly given using the first pixel 160, but the other pixels also have the same configuration, function, material, effect, etc. unless otherwise specified.

[0026] The drive transistor 161A and the write transistor 163A in the first subpixel of the first pixel 160 in FIG. 4 correspond to the drive transistor 201 and the write transistor 203 in FIG.

[0027] The drive transistor 161A and the write transistor 163A are separated by, for example, an insulator. The drain of the write transistor 163A and the gate 165 of the drive transistor 161A are the same node as shown in the circuit diagram of FIG. 2, and are therefore electrically connected by wiring. In a plan view relative to the main surface of the substrate, the gate of the drive transistor 161A is larger than the gate of the write transistor 163A. The drive transistors and write transistors that make up the pixel drive circuits of other subpixels have a similar relationship. In this specification, "component A is large in plan view" refers to the external area of ​​component A being large in plan view.

[0028] 4 is a plan view of the main surface of the substrate, on which a conductive layer (including polysilicon) that serves as a gate electrode and a wiring layer are stacked. The pixel drive circuit of the subpixel 102 shown in FIG. 2 is composed of these electrodes, wiring, contact plugs, etc. Note that some of the connections (wiring, contact plugs) shown in the circuit diagram of FIG. 2 are omitted in FIG. 4.

[0029] In this embodiment, the gate 165A of the driving transistor 161A of the first subpixel 6102A of the first pixel 160 and the gate 175B of the driving transistor 171B of the second subpixel 170 are arranged so as not to overlap with each other in the first direction X. Also, the gate 185A of the driving transistor 181A of the first subpixel 8102A of the third pixel 180 and the gate 195B of the driving transistor 191B of the second subpixel 9102B of the fourth pixel 190 are arranged so as not to overlap with each other in the first direction X.

[0030] In this way, when viewed in a plane relative to the main surface of the substrate, the gates of the driving transistors, which have large areas, are arranged so as not to overlap in the first direction between adjacent pixels, allowing the pixel driving circuits to be densely arranged in a small area.

[0031] Furthermore, considering manufacturing variations, polysilicon requires a larger distance between other elements than wiring. Therefore, the distance between the gates of driving transistors made of polysilicon needs to be larger than the distance between the wiring. Therefore, by arranging the gates of adjacent driving transistors so that they do not overlap in the first direction X, the elements of the pixel driving circuit can be more effectively arranged densely. In other words, even if the area of ​​the pixel driving circuit is reduced, sufficient distance can be maintained between the gates of the driving transistors and other elements, thereby suppressing variations in the characteristics of sub-pixels caused by manufacturing processes such as processing variations in the polysilicon that make up the gates.

[0032] Furthermore, it is preferable that the gates of the driving transistors of adjacent pixels in the rows having adjacent sub-pixels and in the rows of sub-pixels adjacent in the second direction Y are arranged so as not to overlap in the first direction between adjacent pixels. This configuration allows the pixel driving circuits to be arranged more densely in a small area. Since the gates of the driving transistors in multiple pixel rows do not overlap in the first direction, the transistors can be arranged densely, and the pixel driving circuits can be arranged densely in a smaller area.

[0033] Furthermore, the gates of the driving transistors of adjacent subpixels within the first pixel 160 may be arranged so as not to overlap in the first direction X. For example, the gate 165A of the driving transistor 161A of the first subpixel 6102A and the gate 165C of the driving transistor 161C of the third subpixel 6102C are arranged so as not to overlap in the first direction X. This allows the pixel driving circuits of the subpixels to be densely arranged in a small area. Furthermore, it is possible to suppress characteristic variations due to manufacturing processes such as variations in processing of polysilicon that constitutes the gates.

[0034] In this way, in the plurality of sub-pixels arranged two-dimensionally, the gates of the driving transistors are arranged so as not to overlap (are arranged alternately) in the first direction X in a plan view of the main surface of the substrate. This allows the pixel driving circuits of the plurality of sub-pixels to be densely arranged, thereby enabling the light-emitting device to have higher definition or be made smaller.

[0035] By using the configuration of this embodiment, it is possible to arrange the gates of the driving transistors closely together within a pixel, between pixels, and between adjacent sub-pixels. The gates of the driving transistors account for a large proportion of the components of the pixel driving circuit in a plan view. Therefore, by arranging the gates of the driving transistors closely together, it is possible to arrange the pixel driving circuit closely together. Furthermore, for the same area, sufficient spacing can be secured between the gates of the driving transistors and other elements, thereby suppressing variations in the characteristics of the sub-pixels due to the manufacturing process.

[0036] 4, the directions from the source to the drain of the driving transistors arranged in the first pixel 160 and the second pixel 170 are the same. In addition, the directions from the source to the drain of the driving transistors arranged in the third pixel 180 and the fourth pixel 190 are the same. Furthermore, the directions from the source to the drain of the driving transistors arranged in the first pixel 160 to the fourth pixel 190 may be the same. With this configuration, it is possible to reduce variations in the characteristics of the driving transistors.

[0037] [Embodiment 2] Another example of a subpixel included in a light-emitting device will be described with reference to Fig. 5. Descriptions of the same configurations, properties, functions, materials, and effects as those in the first embodiment will be omitted as appropriate.

[0038] 5 shows a plan view of transistors included in the pixel driving circuit of the present embodiment. A first pixel 260, a second pixel 270, a third pixel 280, and a fourth pixel 290 correspond to the first pixel 160, the second pixel 170, the third pixel 180, and the fourth pixel 190 of the first embodiment, respectively.

[0039] Therefore, for example, the multiple pixels include a first pixel 260 and a second pixel 270 adjacent to each other in a first direction X, and a third pixel 280 and a fourth pixel 290 adjacent to each other in the first direction X. Furthermore, the first pixel 260 and the second pixel 270 are adjacent to the third pixel 180 and the fourth pixel 190 in a second direction Y that intersects with the first direction X. Here, the first direction X and the second direction Y may not be perpendicular to each other, but may intersect at an angle smaller than 90°.

[0040] The first pixel 260 has a first subpixel 6202A, a second subpixel 6202B, and a third subpixel 6202C. Similarly, the second pixel 270, the third pixel 280, and the fourth pixel 290 have a first subpixel, a second subpixel, and a third subpixel. A well potential is supplied to the semiconductor substrate via a well contact WC2.

[0041] Regarding the sub-pixels within these pixels, the description of the same parts will be omitted as appropriate. Furthermore, regarding the pixel arrangement and the sub-pixel arrangement and configuration within the pixel, the description of the same parts as those in the first embodiment will be omitted as appropriate.

[0042] The following description will be given mainly using the first pixel 260, but the other pixels also have the same configuration, materials, properties, functions, effects, etc. unless otherwise specified.

[0043] A driving transistor 261A in Fig. 5 corresponds to the driving transistor 201 in Fig. 2 and the driving transistor 161A in Fig. 4. Furthermore, a writing transistor 263A in Fig. 5 corresponds to the writing transistor 203 in Fig. 2 and the writing transistor 163A in Fig. 4.

[0044] The drive transistor 261A and the write transistor 263A are separated by an insulator. The drain of the write transistor 263A and the gate of the drive transistor 261A are electrically connected by a wire. A semiconductor substrate, for example, can be used as the substrate, and a potential is supplied to a well of the semiconductor substrate via a contact 260. Figure 5 is a plan view of the main surface of the substrate.

[0045] The first subpixel 6202A, the second subpixel 6202B, and the third subpixel 6202C of the pixel 260 may each have a light-emitting element of a different color. For example, a light-emitting element that emits red light may be driven by the drive transistor 261A and the write transistor 263A, and a light-emitting element that emits green light may be driven by the drive transistor 261B and the write transistor 263B. Alternatively, a light-emitting element that emits blue light may be driven by the drive transistor 261C and the write transistor 263C.

[0046] In the pixel drive circuit of a subpixel, the gate of the drive transistor is the largest in plan view. In Fig. 5, the gate of the drive transistor of the subpixel drive circuit and the gate of the drive transistor of the pixel drive circuit of an adjacent subpixel are arranged so as not to overlap in the first direction X. Not only when adjacent subpixels are within a single pixel, but also between different pixels, the gates of the drive transistors of adjacent subpixels are arranged in positions so as not to overlap in the first direction.

[0047] This allows pixel drive circuits that drive each sub-pixel to be densely arranged in a small area. Furthermore, when the gates are made of polysilicon, as described in the first embodiment, sufficient spacing between the gates can be ensured even if the area of ​​the pixel drive circuit is reduced. This makes it possible to suppress characteristic variations due to manufacturing processes such as variations in processing of the polysilicon that makes up the gates.

[0048] Furthermore, it is preferable that the gates of the driving transistors in the rows having adjacent sub-pixels and the rows of sub-pixels adjacent in the second direction Y are arranged so that they do not overlap in the first direction between adjacent pixels. This configuration allows the pixel driving circuit to be arranged more densely in a small area. Since the gates of the driving transistors in multiple pixel rows do not overlap in the first direction, the transistors can be arranged densely, and the pixel driving circuit can be arranged more densely in a small area effectively.

[0049] That is, in a plurality of sub-pixels arranged two-dimensionally, the gates of the driving transistors are arranged so as not to overlap (are arranged alternately) in the first direction X in a plan view with respect to the main surface of the substrate. This allows the pixel driving circuits of the plurality of sub-pixels to be densely arranged, thereby enabling the light-emitting device to have higher definition or be made smaller.

[0050] The configuration will be described in more detail. For example, in the first pixel 260, the driving transistor 261A of the first subpixel 6202A has a gate 265A, and the driving transistor 261B of the second subpixel 6202B has a gate 265B. Furthermore, the driving transistor 261C of the third subpixel 6202C arranged between the first subpixel 6202A and the second subpixel 6202B has a gate 265C.

[0051] At this time, the gates 261A and 261C of the driving transistors of the adjacent first and third subpixels 6202A and 6202C are arranged in positions that do not overlap in the first direction X. Furthermore, the gates 261C and 261B of the driving transistors of the adjacent third and second subpixels 6202C and 6202B are arranged in positions that do not overlap in the first direction X.

[0052] In the second pixel 270 adjacent to the first pixel 260, the second subpixel 7202B adjacent to the first subpixel 6202A has a driving transistor 271B, and the driving transistor 271B has a gate 275B. In this case, the gates 261A and 271B of the driving transistors of the first subpixel 6202A of the first pixel 260 and the second subpixel 7202B of the second pixel 270, which are adjacent to each other, are arranged in positions that do not overlap in the first direction X. Although not described here, a similar configuration may also be adopted between other adjacent subpixels.

[0053] The directions from the source to the drain of the driving transistors of the first pixel 260 to the fourth pixel 290 shown in Fig. 5 are the same. For example, the directions from the source to the drain of the driving transistors of the first pixel 260 and the second pixel 270 are the same. Here, the "same direction" only needs to be substantially the same direction, and includes cases where there is a deviation in direction due to an error during manufacturing, etc.

[0054] Specifically, the direction from the source 267A to the drain 268A of the driving transistor 261A is the same as the direction from the source 267B to the drain 268B of the driving transistor 261B. Similarly, the direction from the source 267A to the drain 268A of the driving transistor 261A is the same as the direction from the source 267C to the drain 268C of the driving transistor 261C. Furthermore, the direction from the source 267A to the drain 268A of the driving transistor 261A is the same as the direction from the source 277C to the drain 278C of the driving transistor 271C. Although a description thereof will be omitted here, other sub-pixels may have a similar configuration.

[0055] By arranging the drive transistors of different sub-pixels so that the direction from the source to the drain is the same, a configuration can be achieved in which manufacturing variations are less likely to manifest as characteristic variations. Therefore, by adopting the configuration of this embodiment, it is possible to arrange the transistors of the pixel drive circuit in a smaller area, while achieving a configuration in which manufacturing variations are less likely to manifest as characteristic variations.

[0056] Furthermore, among the three sub-pixels constituting one pixel in FIG. 5, at least one of the width and length of the gate of the driving transistor 201 of one sub-pixel may be larger than at least one of the width and length of the gate of the driving transistors of the other two sub-pixels.

[0057] A light-emitting element is configured to emit light of three colors, red, green, and blue, per pixel, for example. It is known that the relative luminosity factor of a green light source is particularly high in terms of luminance. Therefore, the luminance variation characteristics of the green light source have a significant impact on the luminance variation characteristics of the light-emitting device. Increasing at least one of the width and length of the gate of the driving transistor 201 of the subpixel that emits green light can suppress manufacturing variability.

[0058] 5, subpixel 6202C is a subpixel that emits green light, and subpixels 6202A and 6202B are subpixels that emit either red or blue light, respectively. In this pixel 260, gate 265C of driving transistor 261C is larger in width and length than gates 265A and 265B of driving transistors 261A and 261B of the other subpixels.

[0059] This reduces the luminance variation of the light-emitting elements driven by the driving transistor 261C, and reduces the luminance variation in the green subpixel, which has the greatest effect. This has the effect of suppressing the luminance variation characteristics of the light-emitting device. On the other hand, since the gates of the driving transistors 261A and 261B of the subpixels that emit blue and red light are smaller than the gate of the driving transistor 261C, it is possible to prevent the pixel 260 from becoming larger.

[0060] However, in this embodiment, it is not necessary to provide a pixel drive circuit having a drive transistor with the largest gate for the green light source, but it may also be for the red or blue light source.Furthermore, the gate widths and lengths of the drive transistors of the three subpixels may all be the same.

[0061] As mentioned above, the gate width and length of the driving transistor of the pixel driving circuit do not necessarily need to be the same between subpixels. However, by making the ratio of the gate width to length equal, it is possible to make the current-voltage characteristics of the transistors similar. This makes it possible to reduce uneven light emission caused by variations in the transistor characteristics between subpixels. Note that in this specification, "equal length" refers to being substantially equal in length and includes manufacturing errors.

[0062] 5, the write transistor 263 is arranged to at least partially overlap with the write transistor 263 of an adjacent subpixel in the first direction X. For example, in the first pixel 260, the write transistor 263B of the second subpixel 6202B and the write transistor 263C of the third subpixel 6202C at least partially overlap in the first direction X. Also, the write transistor 263A of the first subpixel 6202A and the write transistor 263C of the third subpixel 6202C at least partially overlap in the first direction X.

[0063] In this embodiment, the write transistors 263A, 263B, and 263C are operated by the same scan line 106b, and are arranged so that at least a portion of them overlap in one direction, thereby improving integration efficiency. Furthermore, since there is no need to route the scan line 106b, the scan line 106b can be arranged simply, with low resistance and low capacitance.

[0064] Although the first pixel 260 has been described above, the second pixel 270, the third pixel 280, and the fourth pixel 290 can also achieve the above-mentioned effects by adopting a similar configuration, as shown in Fig. 5. Furthermore, the write transistors 263 of the first pixel 260 and the second pixel 270 that are adjacent to each other in the first direction X may be arranged so as to at least partially overlap each other in the first direction X. This can further achieve the above-mentioned effects.

[0065] [Embodiment 3] A light emitting device according to a third embodiment of the present invention will be described with reference to Figures 6 and 7. Descriptions of the same configurations, properties, materials, functions, effects, etc. as those of the first or second embodiment will be omitted where appropriate.

[0066] 6 shows a circuit diagram of a subpixel 102 according to this embodiment. The subpixel 102 includes a light-emitting element 300, which is an organic light-emitting element, three transistors, a drive transistor 301, an emission control transistor 302, and a writing transistor 303, and a capacitor 305 and a capacitor 306. Each of these three transistors may be, for example, a MOSFET. A control signal is input to the gates of the emission control transistor 302 and the writing transistor 303 via two scanning lines 106a and 106b.

[0067] The signal line 107 is connected to the source of the write transistor 303, and when the write transistor 303 is turned on, the voltage of the signal line 107 is input to the gate of the drive transistor 301. The current flowing between the source and drain of the drive transistor 301 is determined depending on this signal voltage, thereby controlling the light emission brightness of the light emitting element 300. A potential determined by the photoelectric conversion characteristics of the light emitting element 300 is supplied to the power supply lines 307 and 308, and the potential difference between the power supply lines 307 and 308 can be set to 7 V, for example.

[0068] The subpixel of this embodiment mode includes a light-emission control transistor 302 and a capacitor 306 in addition to the elements included in the subpixel of Embodiment 2. Therefore, for simplicity, the description will be given by appropriately citing the configuration of Embodiment 2.

[0069] 6, the drain of the light-emitting control transistor 302 and the source of the drive transistor 301 are at the same potential and are arranged as the same node. The drain of the writing transistor 313 and the gate of the drive transistor 311 are connected by a wiring 351 (FIG. 7).

[0070] Fig. 7 is a plan view of the main surface of the substrate, and shows some of the electrodes, wiring, and contact plugs shown in Fig. 6. The pixel circuit of pixel 102 shown in Fig. 6 is configured by a wiring layer stacked on the main surface of the substrate, and by a wiring pattern (having, for example, metal or polysilicon) and contact plugs.

[0071] 7 shows a plan view of transistors in the pixel driving circuit of the present embodiment. A first pixel 360, a second pixel 370, a third pixel 380, and a fourth pixel 390 correspond to the first pixel 260, the second pixel 270, the third pixel 280, and the fourth pixel 290 in the second embodiment, respectively.

[0072] Therefore, for example, the multiple pixels include a first pixel 360 and a second pixel 370 adjacent to each other in a first direction X, and a third pixel 380 and a fourth pixel 390 adjacent to each other in the first direction X. Furthermore, the first pixel 360 and the second pixel 370 are adjacent to the third pixel 380 and the fourth pixel 390 in a second direction Y that intersects with the first direction X. Here, the first direction X and the second direction Y may not intersect perpendicularly, but may intersect at an angle smaller than 90°.

[0073] The first pixel 360 has a first subpixel 6302A, a second subpixel 6302B, and a third subpixel 6302C. Similarly, the second pixel 370, the third pixel 380, and the fourth pixel 390 have a first subpixel, a second subpixel, and a third subpixel. Descriptions of similar parts of the subpixels within these pixels will be omitted where appropriate.

[0074] The following description will be mainly given using the first pixel 360, but the other pixels also have the same configuration, materials, properties, functions, effects, etc. as the first pixel 360 unless otherwise specified.

[0075] The driving transistor 361A in Fig. 7 corresponds to the driving transistor 261A in Fig. 5. The writing transistor 363A in Fig. 7 corresponds to the writing transistor 263A in Fig. 5. The driving transistor 301, the emission control transistor 302, and the writing transistor 303 of the pixel driving circuit in Fig. 6 are, for example, the driving transistor 361A, the emission control transistor 362A, and the writing transistor 363A in the first sub-pixel 6302A in Fig. 7. A well potential is supplied to the semiconductor substrate via the well contact WC3.

[0076] In a plan view of the substrate in Figure 7, among the transistors that each subpixel has, the gate of the drive transistor is the largest. In the pixel drive circuit of each subpixel, the gate of the drive transistor and the gate of the drive transistor of the pixel drive circuit of an adjacent subpixel are arranged so as not to overlap in the first direction X. Not only when adjacent subpixels are within a single pixel, but also between different pixels, the gates of the drive transistors of adjacent subpixels are arranged in positions so as not to overlap in the first direction.

[0077] This allows pixel drive circuits that drive each sub-pixel to be densely arranged in a small area. Furthermore, when the gates are made of polysilicon, as described in the first and second embodiments, sufficient spacing between the gates can be ensured even if the area of ​​the pixel drive circuit is reduced. This makes it possible to suppress characteristic variations caused by the manufacturing process, such as variations in processing of the polysilicon that makes up the gates.

[0078] Furthermore, it is preferable that the gates of the driving transistors in the rows having adjacent sub-pixels and the rows of sub-pixels adjacent in the second direction Y are arranged so that they do not overlap in the first direction between adjacent pixels. This configuration allows the pixel driving circuit to be arranged more densely in a small area. Since the gates of the driving transistors in multiple pixel rows do not overlap in the first direction, the transistors can be arranged densely, and the pixel driving circuit can be arranged more densely in a small area effectively.

[0079] That is, in a plurality of sub-pixels arranged two-dimensionally, the gates of the driving transistors are arranged so as not to overlap (are arranged alternately) in the first direction X in a plan view with respect to the main surface of the substrate. This allows the pixel driving circuits of the plurality of sub-pixels to be densely arranged, thereby enabling the light-emitting device to have higher definition or be made smaller.

[0080] In the pixel array unit 103 of this embodiment, it is sufficient that adjacent sub-pixels, each having a driving transistor arranged so that the gates of the adjacent driving transistors do not overlap in the first direction X, are arranged in at least two adjacent rows. This allows the above-mentioned effects to be achieved. It is preferable that all pixels 101 arranged in the pixel array unit 103 satisfy this configuration, since this allows for the most dense arrangement of multiple pixel circuits, but the effects of this embodiment can be achieved even if only a portion of the pixels 101 meet this configuration. Therefore, for example, the pixel array unit 103 may have sub-pixels arranged in positions where the gates of the adjacent driving transistors overlap in the first direction.

[0081] The configuration will be described in more detail. For example, in the first pixel 360, the driving transistor 361A of the first subpixel 6302A has a gate 365A, and the driving transistor 361B of the second subpixel 6302B has a gate 365B. Furthermore, the driving transistor 361C of the third subpixel 6302C arranged between the first subpixel 6302A and the second subpixel 6302B has a gate 365C.

[0082] At this time, the gates 361A and 361C of the driving transistors of the adjacent first and third subpixels 6302A and 6302C are arranged in positions that do not overlap in the first direction X. Furthermore, the gates 361C and 361B of the driving transistors of the adjacent third and second subpixels 6302C and 6302B are arranged in positions that do not overlap in the first direction X.

[0083] In the second pixel 370 adjacent to the first pixel 360, the second subpixel 7302B adjacent to the first subpixel 6302A has a driving transistor 371B, and the driving transistor 371B has a gate 375B. In this case, the gates 361A and 371B of the driving transistors of the first subpixel 6202A of the first pixel 360 and the second subpixel 7302B of the second pixel 370, which are adjacent to each other, are arranged so as not to overlap in the first direction X. Although a description will be omitted, the same configuration is also applied to other adjacent subpixels.

[0084] In a plan view of the main surface of the substrate, the gate of the driving transistor 361A is larger than the gate of the writing transistor 363A. The gate of the driving transistor 361A is also larger than the gate of the light-emitting control transistor 362A. The driving transistors and writing transistors that make up the pixel driving circuits of the other sub-pixels have a similar relationship.

[0085] The directions from the source to the drain of the driving transistors included in the first pixel 360 to the fourth pixel 390 shown in Fig. 7 are the same. For example, the directions from the source to the drain of the driving transistors included in the first pixel 360 and the second pixel 370 are the same. Here, the "same direction" may be substantially the same direction, and includes cases where there is a deviation in direction due to an error during manufacturing, etc.

[0086] Specifically, the direction from the source 367A to the drain 368A of the driving transistor 361A is the same as the direction from the source 367B to the drain 368B of the driving transistor 361B. Similarly, the direction from the source 367A to the drain 368A of the driving transistor 361A is the same as the direction from the source 367C to the drain 368C of the driving transistor 361C. Furthermore, the direction from the source 367A to the drain 368A of the driving transistor 361A is the same as the direction from the source 377C to the drain 378C of the driving transistor 371C. Although a description thereof will be omitted here, the other subpixels have a similar configuration.

[0087] By arranging the drive transistors of different sub-pixels so that the direction from the source to the drain is the same, a configuration can be achieved in which manufacturing variations are less likely to manifest as characteristic variations. Thus, by adopting the configuration of this embodiment, it is possible to arrange the transistors of the pixel drive circuit in the closest possible arrangement while also achieving a configuration in which manufacturing variations are less likely to manifest as characteristic variations.

[0088] Furthermore, among the three sub-pixels constituting one pixel in FIG. 7, at least one of the width and length of the gate of the driving transistor 301 of one sub-pixel may be larger than at least one of the width and length of the gate of the driving transistor of the other two sub-pixels.

[0089] Furthermore, among the three sub-pixels constituting one pixel in FIG. 7, at least one of the width and length of the gate of the driving transistor 301 of one sub-pixel may be larger than at least one of the width and length of the gate of the driving transistor of the other two sub-pixels.

[0090] 7, subpixel 6302C is a subpixel that emits green light, and subpixels 6302A and 6302B can be subpixels that emit either red or blue light, respectively. In this pixel 360, gate 365C of drive transistor 361C is larger in width and length than gates 365A and 365B of drive transistors 361A and 361B of the other subpixels.

[0091] This reduces the luminance variation of the light-emitting elements driven by the driving transistor 361C, especially the luminance variation in the green subpixel, which has the greatest effect. This has the effect of suppressing the luminance variation characteristics of the light-emitting device. On the other hand, because the gates of the driving transistors 361A and 361B of the subpixels that emit blue and red light are smaller than the gate of the driving transistor 361C, the pixel 360 can be prevented from becoming larger.

[0092] However, in this embodiment, it is not necessary to provide a pixel drive circuit having a drive transistor with the largest gate for the green light source, but it may also be for the red or blue light source.Furthermore, the gate widths and lengths of the drive transistors of the three subpixels may all be the same.

[0093] Furthermore, even if the gate sizes of the driving transistors differ between subpixels, the current-voltage characteristics of the transistors can be made similar by making the ratio of the width to the length of each gate equal, thereby reducing uneven light emission and other issues caused by variations in the transistor characteristics between subpixels.

[0094] 7, for example, in the pixel 360, the write transistor 363A of the first subpixel 6302A and the write transistor 363C of the adjacent third subpixel 6302C are arranged so as to at least partially overlap in the first direction X.

[0095] Furthermore, for example, the write transistor 363A of the first subpixel 6302A of the first pixel 360 and the write transistor 373C of the second subpixel 7302C of the adjacent second pixel 370 may be arranged to at least partially overlap in the first direction X.

[0096] These write transistors are driven by the same scan line 106b. Therefore, by arranging the gates so that at least a portion of the gates overlap in the first direction, integration efficiency is improved and the scan line 106b can be arranged more simply with low resistance and low capacitance.

[0097] Similarly, in the pixel 360, for example, the emission control transistor 362A of the first subpixel 6302A and the emission control transistor 362C of the adjacent third subpixel 6302C are arranged so as to at least partially overlap in the first direction X.

[0098] Furthermore, for example, the emission control transistor 362A of the first subpixel 6302A of the first pixel 360 and the emission control transistor 372C of the second subpixel 7302C of the adjacent second pixel 370 may be arranged to at least partially overlap in the first direction X.

[0099] These light-emission control transistors are driven by the same scanning line 106a. Therefore, by arranging the gates so that at least a portion of the gates overlap in the first direction, integration efficiency is improved and the scanning line 106b can be arranged more simply with low resistance and low capacitance.

[0100] Here, the first subpixel 6302A and the third subpixel 6302C of the first pixel 360 and the second subpixel 7302B of the second pixel 370 have been described as examples, but the present embodiment is not limited to this. By using a similar configuration for other adjacent subpixels, the pixel driving circuit can be arranged in a smaller area, and the scanning lines can be arranged more simply with lower resistance and capacitance.

[0101] [Embodiment 4] A third embodiment of the light emitting device of the present embodiment will be described with reference to Figures 8 and 9. Descriptions of the same configurations, properties, materials, functions, effects, etc. as those of the first or second embodiment will be omitted as appropriate.

[0102] 8 shows a circuit diagram of a subpixel 102 according to this embodiment. The subpixel 102 has four transistors: a light-emitting element 400, a driving transistor 401, a light-emitting control transistor 402, a writing transistor 403, and a reset transistor 404. The subpixel 102 also has two capacitors: a capacitor 405 and a capacitor 406 (second capacitor). Each of these four transistors may be, for example, a MOSFET.

[0103] Control signals are input to the gates of the light-emitting control transistor 402, the write transistor 403, and the reset transistor 404 via three scanning lines 106a, 106b, and 106c, respectively. A signal line 107 is connected to the source of the write transistor 403, and when the write transistor 403 is turned on, the voltage of the signal line 107 is input to the gate of the drive transistor 401. The value of the current flowing between the source and drain of the drive transistor 401 is determined depending on this signal voltage, and the light-emitting brightness of the light-emitting element 400 is controlled.

[0104] The drain of the drive transistor 401 is connected to the anode of the light-emitting element 400 and the source of the reset transistor 404. When the reset transistor 404 is in the ON state, no current flows through the light-emitting element 400, and the light-emitting element 400 does not emit light. The potential of the power supply wiring 407 is higher than the potential of the power supply wiring 408; for example, the potential of the power supply wiring 407 may be 5 volts, the potential of the power supply wiring 408 may be 0 volts, and the potential of the power supply wiring 409 may be minus 2 volts. The settings of these potentials are determined by the photoelectric conversion characteristics of the light-emitting element 400. The power supply wiring 408 and the power supply wiring 409 may be at the same potential, for example, minus 2 volts.

[0105] The capacitive element 405 and the capacitive element 406 may have a configuration of metal film-insulating film-metal film, or a configuration of polysilicon-silicon oxide film-silicon, etc. Although the subpixel 102 shown in FIG. 8 has the capacitive element 406, the subpixel 102 in this embodiment does not necessarily have to have the capacitive element 406.

[0106] The subpixel of this embodiment has a reset transistor 404 in addition to the elements included in the subpixel of embodiment 3. Therefore, for simplicity, the description will be made by appropriately quoting the configuration of embodiment 3. One of the source and drain of the reset transistor 404 is connected to the light-emitting element 400 and the light-emitting control transistor 462, and the other of the source and drain is connected to a power supply wiring 409 (second power supply wiring).

[0107] 9 shows a plan view of transistors that are components of the pixel drive circuit of the subpixel 102 in this embodiment. In the subpixel 102 of FIG. 8, the drain of the light-emitting control transistor 402 and the source of the drive transistor 401 are at the same potential and are arranged as the same node. Similarly, the drain of the drive transistor 401 and the source of the reset transistor 404 are arranged as the same node. The drain of the write transistor 403 and the gate of the drive transistor 401 are electrically connected by a wiring 451.

[0108] Fig. 9 is a plan view of the main surface of the substrate, and shows some of the electrodes, wiring, and contact plugs shown in Fig. 8. The pixel circuit of pixel 102 shown in Fig. 8 is configured by a wiring layer stacked on the main surface of the substrate, and by a wiring pattern (having, for example, metal or polysilicon) and contact plugs.

[0109] 9 shows a plan view of transistors of the pixel driving circuit in this embodiment. A first pixel 460, a second pixel 470, a third pixel 480, and a fourth pixel 490 correspond to the first pixel 360, the second pixel 370, the third pixel 380, and the fourth pixel 390 in the third embodiment, respectively.

[0110] Therefore, for example, the plurality of pixels include a first pixel 460 and a second pixel 470 adjacent to each other in a first direction X, and a third pixel 480 and a fourth pixel 490 adjacent to each other in the first direction X. Furthermore, the first pixel 460 and the second pixel 470 are adjacent to the third pixel 480 and the fourth pixel 490 in a second direction Y that intersects with the first direction X. Here, the first direction X and the second direction Y may not intersect perpendicularly, but may intersect at an angle smaller than 90°.

[0111] The first pixel 460 has a first subpixel 6402A, a second subpixel 6402B, and a third subpixel 6402C. Similarly, the second pixel 470, the third pixel 480, and the fourth pixel 490 have a first subpixel, a second subpixel, and a third subpixel. Descriptions of similar parts of the subpixels within these pixels will be omitted as appropriate.

[0112] The following description will be mainly given using the first pixel 460, but the other pixels also have the same configuration, materials, properties, functions, effects, etc. as the first pixel 460 unless otherwise specified.

[0113] 9 corresponds to the driving transistor 361A in FIG. 7. Furthermore, the writing transistor 463A in FIG. 9 corresponds to the writing transistor 363A in FIG. 7. The driving transistor 401, the light-emitting control transistor 402, and the writing transistor 403 of the pixel driving circuit in FIG. 8 are, for example, the driving transistor 461A, the light-emitting control transistor 462A, and the writing transistor 463A in the first sub-pixel 4602A in FIG. 9. A well potential is supplied to the semiconductor substrate via a well contact WC4.

[0114] In a plan view of the substrate in Figure 9, among the transistors that each subpixel has, the gate of the drive transistor is the largest. In the pixel drive circuit of each subpixel, the gate of the drive transistor and the gate of the drive transistor of the pixel drive circuit of an adjacent subpixel are arranged so as not to overlap in the first direction X. Not only when adjacent subpixels are within a single pixel, but also between different pixels, the gates of the drive transistors of adjacent subpixels are arranged in positions so as not to overlap in the first direction.

[0115] This allows pixel drive circuits that drive each sub-pixel to be densely arranged in a small area. Furthermore, when the gates are made of polysilicon, as described in the first to third embodiments, sufficient spacing between the gates can be ensured even if the area of ​​the pixel drive circuit is reduced. This makes it possible to suppress variations in characteristics due to manufacturing processes, such as variations in processing of the polysilicon that makes up the gates.

[0116] Furthermore, it is preferable that the gates of the driving transistors in the rows having adjacent sub-pixels and the rows of sub-pixels adjacent in the second direction Y are arranged so that they do not overlap in the first direction between adjacent pixels. This configuration allows the pixel driving circuit to be arranged more densely in a small area. Since the gates of the driving transistors in multiple pixel rows do not overlap in the first direction, the transistors can be arranged densely, and the pixel driving circuit can be arranged more densely in a small area effectively.

[0117] That is, in a plurality of sub-pixels arranged two-dimensionally, the gates of the driving transistors are arranged so as not to overlap (are arranged alternately) in the first direction X in a plan view with respect to the main surface of the substrate. This allows the pixel driving circuits of the plurality of sub-pixels to be densely arranged, thereby enabling the light-emitting device to have higher definition or be made smaller.

[0118] In the pixel array unit 103 of this embodiment, it is sufficient that adjacent sub-pixels, each having a driving transistor arranged so that the gates of the adjacent driving transistors do not overlap in the first direction X, are arranged in at least two adjacent rows. This allows the above-mentioned effects to be achieved. It is preferable that all pixels 101 arranged in the pixel array unit 103 satisfy this configuration, since this allows for the most dense arrangement of multiple pixel circuits, but the effects of this embodiment can be achieved even if only a portion of the pixels 101 meet this configuration. Therefore, for example, the pixel array unit 103 may have sub-pixels arranged in positions where the gates of the adjacent driving transistors overlap in the first direction.

[0119] The configuration will be described in more detail. For example, in the first pixel 460, the driving transistor 461A of the first subpixel 6402A has a gate 465A, and the driving transistor 461B of the second subpixel 6402B has a gate 465B. Furthermore, the driving transistor 461C of the third subpixel 6402C arranged between the first subpixel 6402A and the second subpixel 6402B has a gate 465C.

[0120] At this time, the gates 461A and 461C of the driving transistors of the adjacent first and third subpixels 6402A and 6402C are arranged in positions that do not overlap in the first direction X. Furthermore, the gates 461C and 461B of the driving transistors of the adjacent third and second subpixels 6402C and 6402B are arranged in positions that do not overlap in the first direction X.

[0121] In the second pixel 470 adjacent to the first pixel 460, the second subpixel 7402B adjacent to the first subpixel 6402A has a driving transistor 471B, and the driving transistor 471B has a gate 475B. In this case, the gates 461A and 471B of the driving transistors of the first subpixel 6402A of the first pixel 460 and the second subpixel 7402B of the second pixel 470, which are adjacent to each other, are arranged so as not to overlap in the first direction X. Although a description will be omitted, a similar configuration may be provided between other adjacent subpixels.

[0122] In a plan view of the main surface of the substrate, the gate of the driving transistor 461A is larger than the gate of the writing transistor 463A. The gate of the driving transistor 461A is also larger than the gates of the emission control transistor 462A and the reset transistor 404A. The driving transistors, writing transistors, emission control transistors, and reset transistors that constitute the pixel driving circuits of the other sub-pixels have a similar relationship.

[0123] The directions from the source to the drain of the driving transistors included in the first pixel 460 to the fourth pixel 490 shown in Fig. 9 are the same. For example, the directions from the source to the drain of the driving transistors included in the first pixel 460 and the second pixel 470 are the same. Here, the "same direction" may be substantially the same direction, and includes cases where there is a deviation in direction due to an error during manufacturing, etc.

[0124] Specifically, the direction from the source 467A to the drain 468A of the driving transistor 461A is the same as the direction from the source 467B to the drain 468B of the driving transistor 461B. Similarly, the direction from the source 467A to the drain 468A of the driving transistor 461A is the same as the direction from the source 467C to the drain 468C of the driving transistor 461C. Furthermore, the direction from the source 467A to the drain 468A of the driving transistor 461A is the same as the direction from the source 477C to the drain 478C of the driving transistor 471C. Although a description thereof will be omitted here, the other subpixels have a similar configuration.

[0125] By arranging the drive transistors of different sub-pixels so that the direction from the source to the drain is the same, a configuration can be achieved in which manufacturing variations are less likely to manifest as characteristic variations. Thus, by adopting the configuration of this embodiment, it is possible to arrange the transistors of the pixel drive circuit in the closest possible arrangement while also achieving a configuration in which manufacturing variations are less likely to manifest as characteristic variations.

[0126] Furthermore, among the three sub-pixels constituting one pixel in FIG. 9, at least one of the width and length of the gate of the driving transistor 401 of one sub-pixel may be larger than at least one of the width and length of the gate of the driving transistor of the other two sub-pixels.

[0127] Furthermore, among the three sub-pixels constituting one pixel in FIG. 9, at least one of the width and length of the gate of the driving transistor 401 of one sub-pixel may be larger than at least one of the width and length of the gate of the driving transistor of the other two sub-pixels.

[0128] 9, the subpixel 6402C emits green light, and the subpixels 6402A and 6402B emit either red or blue light. In this pixel 460, the gate 465C of the driving transistor 461C is larger in width and length than the gates 465A and 465B of the driving transistors 461A and 461B of the other subpixels.

[0129] This reduces the luminance variation of the light-emitting element driven by the driving transistor 461C, and reduces the luminance variation in the green subpixel, which has the greatest effect. This has the effect of suppressing the luminance variation characteristics of the light-emitting device. On the other hand, since the gates of the driving transistors 461A and 461B of the subpixels that emit blue and red light are smaller than the gate of the driving transistor 461C, it is possible to suppress the image 460 from becoming larger.

[0130] However, in this embodiment, it is not necessary to provide a pixel drive circuit having a drive transistor with the largest gate for the green light source, but it may also be for the red or blue light source.Furthermore, the gate widths and lengths of the drive transistors of the three subpixels may all be the same.

[0131] Furthermore, even if the gate sizes of the driving transistors differ between subpixels, the current-voltage characteristics of the transistors can be made similar by making the ratio of the width to the length of each gate equal, thereby reducing uneven light emission and other issues caused by variations in the transistor characteristics between subpixels.

[0132] 9, for example, in the pixel 460, the write transistor 463A of the first subpixel 6402A and the write transistor 463C of the adjacent third subpixel 6402C are arranged so as to at least partially overlap in the first direction X.

[0133] Furthermore, for example, the write transistor 463A of the first subpixel 6402A of the first pixel 460 and the write transistor 473C of the second subpixel 7402C of the adjacent second pixel 470 may be arranged to at least partially overlap in the first direction X.

[0134] These write transistors are driven by the same scan line 106b. Therefore, by arranging the gates so that at least a portion of the gates overlap in the first direction, integration efficiency is improved and the scan line 106b can be arranged more simply with low resistance and low capacitance.

[0135] Similarly, in the pixel 460, for example, the emission control transistor 462A of the first subpixel 6402A and the emission control transistor 462C of the adjacent third subpixel 6402C are arranged so as to at least partially overlap in the first direction X.

[0136] Furthermore, for example, the emission control transistor 462A of the first subpixel 6402A of the first pixel 460 and the emission control transistor 372C of the second subpixel 7402C of the adjacent second pixel 470 may be arranged to at least partially overlap in the first direction X.

[0137] These light-emission control transistors are driven by the same scanning line 106a. Therefore, by arranging the gates so that at least a portion of the gates overlap in the first direction, integration efficiency is improved and the scanning line 106b can be arranged more simply with low resistance and low capacitance.

[0138] Here, the first subpixel 6402A and the third subpixel 6402C of the first pixel 460 and the second subpixel 7402B of the second pixel 470 have been described as examples, but the present embodiment is not limited to this. By using a similar configuration for other adjacent subpixels, the pixel driving circuit can be arranged in a smaller area, and the scanning lines can be arranged more simply with lower resistance and capacitance.

[0139] In this embodiment, the light-emitting control transistor 402, the writing transistor 403, and the reset transistor 404 function as switches in the pixel driving circuit. On the other hand, the driving transistor 401 is for controlling the current flowing through the light-emitting element 400. In other words, the requirements for manufacturing variations and characteristic variations for the three transistors other than the driving transistor 401 are not as strict as those for the driving transistor.

[0140] Therefore, as shown in Fig. 8, for example, the reset transistors 404 may be arranged so that the directions from the source to the drain are perpendicular to each other in adjacent subpixels 102. This is because arrangement is possible within a limited area, and the drains of the reset transistors 404 of adjacent subpixels 102 may be directly connected to each other via wiring or the active region of the transistor for conduction, as shown in Fig. 9. This makes it possible to provide a display device having finer pixels composed of transistors arranged more closely together.

[0141] To achieve this configuration, in this embodiment, the drains of the reset transistors 404 in two subpixels within the pixel 460 are directly connected by wiring or active regions of the transistors. On the other hand, in two subpixels adjacent to the subpixel, the drains of the reset transistors 404 in the different pixels 460 and 470 are directly connected by wiring or active regions of the transistors.

[0142] That is, a configuration in which the reset transistors of two sub-pixels within a pixel are directly connected by wiring or an active region, and a configuration in which two reset transistors between different adjacent pixels are connected by wiring or an active region are alternately arranged in the first direction X.

[0143] 9, for example, the reset transistor 464B of the second subpixel 6402B of the first pixel 460 and the reset transistor 464C of the third subpixel 6402C of the first pixel 460 are directly connected by a wiring 411. Furthermore, the reset transistor 464A of the first subpixel 6402A of the first pixel 460 and the reset transistor 474B of the second subpixel 7402B of the second pixel 470 are directly connected by a wiring 412. Furthermore, in FIG. 9, the gates of the reset transistors of two adjacent subpixels are arranged to at least partially overlap in the second direction Y.

[0144] With this configuration, the transistors of the pixel drive circuit of each subpixel 102 can be arranged in a smaller area, i.e., more densely, in the first direction X and the second direction Y. This allows for higher definition or smaller size of the display device.

[0145] 9, the gate 465A of the driving transistor 461A of the first subpixel 6402A is disposed between the gate of the emission control transistor 462C of the third subpixel 6402C and the gate of the emission control transistor 472B of the second subpixel 7402B in the first direction X. This configuration allows the transistors of the pixel driving circuit of each subpixel 102 to be arranged in a smaller area, i.e., more densely. This allows for higher resolution or smaller size of the display device.

[0146] Furthermore, the gate of the emission control transistor 462A of the first subpixel 6402A is disposed between the gate of the writing transistor 463C of the third subpixel 6402C and the gate of the writing transistor 463A of the first subpixel 6402A in the first direction X. With this configuration, the transistors of the pixel driving circuit of each subpixel 102 can be arranged in a smaller area, i.e., more densely. This allows for higher resolution or smaller size of the display device.

[0147] Furthermore, in the first subpixel 6402A of the first pixel 460, the gate of the drive transistor 463A is disposed between the gate of the light-emitting control transistor 462A and the reset transistor 464A in the second direction. This configuration also allows the transistors of the pixel drive circuit of each subpixel 102 to be arranged in a smaller area, i.e., more densely. This allows for higher resolution and smaller size of the display device.

[0148] 10 shows an example of an outer edge 4001 of a subpixel 102 in an upper layer portion having light-emitting elements and the like above the pixel circuit, indicated by a dashed line in a plan view of a portion of the display device shown in FIG. The pixel driving circuits are arranged in a matrix in the first and second directions, but the upper layer portion may be arranged in a honeycomb structure so that the subpixels 102, which are approximately hexagonal, are closely packed. By arranging them in this manner, a larger light-emitting area can be secured, thereby improving the brightness of the display device.

[0149] In this embodiment, an example is shown in which the outer edges 2001 of the sub-pixels 102 in the upper layer are substantially hexagonal and the sub-pixels 102 are arranged in a honeycomb structure, but the shape of the sub-pixels 102 in this embodiment is not limited to this. The sub-pixels 102 may have a shape and arrangement corresponding to the shape and arrangement of the pixel drive circuit, or may have other arrangements such as a stripe arrangement or a pentile arrangement.

[0150] Next, a cross section of an example of a portion of the light emitting device of this embodiment will be described with reference to Fig. 11. Here, an example of the light emitting device of this embodiment is shown, but portions having a similar configuration can also be used in the light emitting devices of any of the first to third embodiments.

[0151] The light emitting device includes a substrate 11, an insulating layer 14, and a light emitting element 400. The insulating layer 14 is located on the substrate 11. The light emitting element 400 is located on the insulating layer 14. In other words, the insulating layer 14 is located between the substrate 11 and the light emitting element 400.

[0152] The substrate 11 has a main surface (the upper surface in FIG. 11) on which the drive transistor 401, the write control transistor 403, and the light-emitting control transistor 402 are formed. The substrate 14 may be formed of, for example, a P-type semiconductor. An N-type well region 13 is formed on the main surface side of the substrate 11 (i.e., the upper side of the substrate 11). The substrate 11 other than the well region 13 becomes a P-type semiconductor region 12.

[0153] The substrate 11 has a plurality of impurity regions that function as source regions or drain regions of the transistors in the well region 13. The conductivity type of the impurity regions can be, for example, P type.

[0154] A conductive layer 465, a conductive layer 463G, and a conductive layer 464G are arranged on the main surface (upper surface) of the substrate 11. The conductive layer 463G functions as the gate of the light-emitting control transistor 463. One of the P-type impurity regions functions as the source 463S of the light-emitting control transistor 463, and another of the P-type impurity regions functions as the drain 463D. The conductive layer 465 functions as the gate of the driving transistor 461. The impurity region that functions as the drain 463D of the light-emitting control transistor 463 also functions as the source 468 of the driving transistor 401. In addition, another one of the P-type impurity regions functions as the drain 467 of the driving transistor 401.

[0155] Furthermore, the conductive layer 464G functions as the gate of the reset transistor 464. Moreover, the impurity region that functions as the source 468 of the drive transistor 401 also functions as the drain 464D of the reset transistor 464. Moreover, another one of the P-type impurity regions functions as the source 464S of the reset transistor 464.

[0156] The substrate 11 further has an isolation portion 430 formed between adjacent pixels 101. As the isolation portion 430, STI (Shallow Trench Isolation), LOCOS (LOCal Oxidation of Silicon) isolation, N-type diffusion layer isolation, or the like may be used.

[0157] The light-emitting element has a cathode 416, an organic light-emitting layer 415, and an anode 414. The cathode 416 is electrically connected to the power line 408. The anode 414 is electrically connected to the main terminal (here, the drain) of the driving transistor 401. The organic light-emitting layer 415 is located between the cathode 416 and the anode 414. A bank portion 417 is arranged at the end of the anode 414. The bank portion 417 prevents the current flowing between the anode 414 and the cathode 416 from leaking to adjacent pixels 101.

[0158] Conductive patterns, electrodes of capacitor elements, and plugs are embedded in the insulating layer 14. The insulating layer 14 may be, for example, silicon oxide. Each of the conductive patterns may be a wiring layer. For example, as shown in FIG. 11, the conductive pattern may include wiring WR1, wiring WR2, and wiring WR3.

[0159] The capacitor 405 has electrodes 405a and 405b, and the capacitor 406 has electrodes 406a and 406b. In the insulating layer 14, the electrodes 405a and 406a may be disposed on the same insulating layer. Also, the electrodes 405b and 406b may be disposed on the same insulating layer. The electrodes 405a and 405b face each other with the insulating layer sandwiched between them. Also, the electrodes 406a and 406b face each other with the insulating layer sandwiched between them. This forms a capacitor with an MIM (Metal-Insulator-Metal) structure.

[0160] The multiple plugs may include, for example, plug PL1, plug PL2, plug PL3, plug PL4, and plug PL5. The multiple plugs may all have the same thickness or may have different thicknesses, or some may have the same thickness and some may have different thicknesses.

[0161] The plug PL1 may connect the wiring WR1 to a terminal (any of the gate, source, or drain) of the transistor. The plug PL2 may connect the wiring WR2 to another wiring WR2. The lower electrode of the capacitor element (405 or 406) may be connected to the driving transistor 401 via the plug PL3, the wiring WR2, the plug PL2, the wiring WR1, and the plug PL1. The upper electrode of the capacitor element (405 or 406) may be connected to the wiring WR3 via the plug PL5.

[0162] The wiring WR3 may be connected to a transistor (in FIG. 11, any one of the drive transistor, current control transistor, and reset transistor) via a plug PL4, wiring R2, plug PL2, wiring WR1, and plug PL1. The anode 414 may be connected to the source 467 of the drive transistor 401 via a plug PL6, wiring WR3, plug PL4, wiring WR2, plug PL2, wiring WR1, and plug PL1.

[0163] The plugs may be formed in a separate process from the wiring, or may be formed in the same process as the wiring disposed on the plugs. For example, the wiring WR2 and the plug PL2 may be formed in the same process and made of the same material. Also, the wiring WR3 and the plug PL4 may be formed in the same process and made of the same material.

[0164] The wiring and plugs can be formed using a metal such as copper, tungsten, aluminum, or titanium, or an alloy thereof.

[0165] In this way, by using a semiconductor substrate as the substrate and using MOS transistors as the transistors in each pixel 101, the transistors can be arranged more densely than when thin film transistors are used. Therefore, by configuring the light emitting device of this embodiment to have a semiconductor substrate and MOS transistors as the transistors, the light emitting device can be made higher definition or smaller in size.

[0166] [Embodiment 5] Next, an example of an organic light-emitting element that can be used in the light-emitting device according to any one of Embodiments 1 to 4 will be described. The organic light-emitting element according to this embodiment includes a first electrode, a second electrode, and an organic compound layer disposed between these electrodes. One of the first electrode and the second electrode is an anode, and the other is a cathode. In the organic light-emitting element according to this embodiment, the organic compound layer may be a single layer or a laminate consisting of multiple layers, as long as it has an emitting layer. When the organic compound layer is a laminate consisting of multiple layers, the organic compound layer may include, in addition to the emitting layer, a hole injection layer, a hole transport layer, an electron blocking layer, a hole / exciton blocking layer, an electron transport layer, an electron injection layer, etc. Furthermore, the emitting layer may be a single layer or a laminate consisting of multiple layers. When the emitting layer is a multi-layer structure, a charge generation layer may be disposed between the emitting layers. The charge generation layer may be composed of a compound having a lower LUMO than the hole transport layer, and the LUMO of the charge generation layer may be lower than the HOMO of the hole transport layer. Here, the molecular orbital energy of the organic compound layer may be the molecular orbital energy of the organic compound having the largest weight ratio in the organic compound layer.

[0167] In the organic light-emitting device of this embodiment, when the organic compound according to this embodiment is contained in the light-emitting layer, the light-emitting layer may be a layer consisting solely of the organic compound according to this embodiment, or may be a layer consisting of the organometallic complex according to this embodiment and other compounds. Here, when the light-emitting layer is a layer consisting of the organometallic complex according to this embodiment and other compounds, the organic compound according to this embodiment may be used as a host or a guest of the light-emitting layer. It may also be used as an assist material that can be contained in the light-emitting layer. Here, the host is the compound with the largest mass ratio among the compounds constituting the light-emitting layer. The guest is a compound with a mass ratio smaller than that of the host among the compounds constituting the light-emitting layer, and is responsible for the main emission of light. The assist material is a compound with a mass ratio smaller than that of the host among the compounds constituting the light-emitting layer, and assists the emission of the guest. The assist material is also called a second host. The host material can also be called a first compound, and the assist material can also be called a second compound.

[0168] Here, the organic compound according to the present embodiment may be used together with conventionally known low-molecular-weight and high-molecular-weight hole-injecting or hole-transporting compounds, host compounds, light-emitting compounds, electron-injecting or electron-transporting compounds, etc., as needed.

[0169] The hole injection / transport material is preferably a material with high hole mobility that facilitates the injection of holes from the anode and transports the injected holes to the light-emitting layer. Furthermore, a material with a high glass transition temperature is preferred in order to reduce deterioration of film quality, such as crystallization, in the organic light-emitting device.

[0170] The electron transporting material can be arbitrarily selected from those capable of transporting electrons injected from the cathode to the light-emitting layer, and is selected in consideration of the balance with the hole mobility of the hole transporting material, etc. The electron transporting material is also preferably used in the hole blocking layer.

[0171] The electron-injecting material can be arbitrarily selected from those that allow easy injection of electrons from the cathode, and is selected in consideration of the balance with hole-injecting properties, etc. It can also be used in combination with an electron-transporting material.

[0172] [Configuration of organic light-emitting element] The organic light-emitting element is provided by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, etc. may be provided on the cathode. When a color filter is provided, a planarizing layer may be provided between the protective layer. The planarizing layer may be made of acrylic resin or the like. The same applies when a planarizing layer is provided between the color filter and the microlens.

[0173] [substrate] Examples of the substrate include quartz, glass, silicon wafer, resin, and metal. Furthermore, the substrate may be provided with switching elements such as transistors and wiring, and an insulating layer thereon. When a silicon wafer is used as the substrate, the active layer, source region, and drain region of the transistor are formed within the substrate. Furthermore, this is preferable because it allows for densely arranged transistors.

[0174] The insulating layer may be made of any material as long as it can form a contact hole between the insulating layer and the first electrode, and can be insulated from unconnected wiring. For example, resins such as polyimide, silicon oxide, silicon nitride, etc. can be used.

[0175] [electrode] A pair of electrodes can be used. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with a higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0176] The anode material should have as high a work function as possible. Examples include simple metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, and tungsten, mixtures containing these metals, alloys of these metals, and metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and zinc indium oxide. Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used.

[0177] These electrode materials may be used alone or in combination of two or more. The anode may be composed of one layer or multiple layers.

[0178] When used as a reflective electrode, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or alloys or laminates thereof can be used. The above materials can also function as a reflective film without functioning as an electrode. When used as a transparent electrode, transparent conductive oxide layers such as indium tin oxide (ITO) and indium zinc oxide can be used, but are not limited to these. Photolithography techniques can be used to form the electrode.

[0179] On the other hand, materials with a low work function are preferable for the cathode. Examples include alkali metals such as lithium, alkaline earth metals such as calcium, and metals such as aluminum, titanium, manganese, silver, lead, and chromium, as well as mixtures containing these metals. Alloys combining these metals can also be used. Examples include magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, and zinc-silver. Metal oxides such as indium tin oxide (ITO) can also be used.

[0180] These electrode materials may be used alone or in combination of two or more. The cathode may have a single layer or a multi-layer structure. Among these, silver is preferably used, and a silver alloy is more preferable to reduce silver aggregation. The alloy ratio is not important as long as it can reduce silver aggregation. For example, the silver:other metal ratio may be 1:1, 3:1, etc.

[0181] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but DC and AC sputtering methods are more preferred because they provide good film coverage and make it easier to reduce resistance.

[0182] [Pixel isolation layer] The pixel separation layer is formed of a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, or a silicon oxide (SiO) film formed using a chemical vapor deposition (CVD) method. To increase the in-plane resistance of the organic compound layer, it is preferable that the organic compound layer, particularly the hole transport layer, be thinly formed on the sidewalls of the pixel separation layer. Specifically, the thickness of the sidewalls can be made thin by increasing the taper angle of the sidewalls of the pixel separation layer or the thickness of the pixel separation layer, thereby increasing vignetting during deposition.

[0183] On the other hand, it is preferable to adjust the sidewall taper angle and film thickness of the pixel separation layer to such an extent that voids are not formed in the protective layer formed thereon. Since voids are not formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, deterioration of reliability such as the occurrence of dark spots and poor conduction of the second electrode can be reduced.

[0184] By adjusting the taper angle of the sidewall of the pixel separation layer, it is possible to effectively suppress charge leakage to adjacent pixels. For example, it has been found that a taper angle between 60 degrees and 90 degrees can sufficiently reduce charge leakage. The thickness of the pixel separation layer is preferably between 10 nm and 150 nm. Similar effects can also be achieved with a pixel electrode alone, without a pixel separation layer. However, in this case, it is preferable to make the thickness of the pixel electrode less than half that of the organic layer, or to make the edge of the pixel electrode forward tapered at less than 60 degrees, as this reduces short circuits in the organic light-emitting element.

[0185] [Organic compound layer] The organic compound layer may be formed as a single layer or as multiple layers. When multiple layers are included, they may be called hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, or electron injection layer depending on their functions. The organic compound layer is mainly composed of organic compounds but may also contain inorganic atoms or inorganic compounds. For example, the organic compound layer may contain copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, or the like. The organic compound layer may be disposed between the first electrode and the second electrode, or may be disposed in contact with the first electrode and the second electrode.

[0186] When the device has multiple light-emitting layers, a charge generation portion may be present between the first light-emitting layer and the second light-emitting layer. The charge generation portion may have an organic compound with a lowest unoccupied molecular orbital energy (LUMO) of -5.0 eV or less. The same applies when the charge generation portion is present between the second light-emitting layer and the third light-emitting layer.

[0187] [Protective layer] A protective layer may be provided on the second electrode. For example, by adhering glass with a moisture absorbent on the second electrode, the intrusion of water and other contaminants into the organic compound layer can be reduced, thereby reducing the occurrence of display defects. In another embodiment, a passivation film such as silicon nitride may be provided on the cathode to reduce the intrusion of water and other contaminants into the organic compound layer. For example, after forming the cathode, the cathode may be transferred to another chamber without breaking the vacuum, and a 2 μm-thick silicon nitride film may be formed by CVD to serve as a protective layer. A protective layer may be provided using atomic layer deposition (ALD) after the CVD film formation. The material of the film formed by ALD is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, or the like. Silicon nitride may be further formed on the film formed by ALD by CVD. The film formed by ALD may have a thickness smaller than that of the film formed by CVD. Specifically, the thickness may be 50% or less, or even 10% or less.

[0188] [Color Filter] A color filter may be provided on the protective layer. For example, a color filter taking into consideration the size of the organic light-emitting element may be provided on a separate substrate and then bonded to the substrate on which the organic light-emitting element is provided, or a color filter may be patterned on the protective layer described above using photolithography technology. The color filter may be made of a polymer.

[0189] [Planarization layer] A planarization layer may be provided between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing the unevenness of the underlying layer. It may also be called a material resin layer without limiting its purpose. The planarization layer may be composed of an organic compound, and may be either a low molecular weight or a high molecular weight, but a high molecular weight is preferred.

[0190] The planarizing layer may be provided above or below the color filter, and may be made of the same or different materials, such as polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0191] [Microlens] The light-emitting device may have an optical component such as a microlens on its light-emitting side. The microlens may be made of acrylic resin, epoxy resin, or the like. The microlens may be used to increase the amount of light extracted from the light-emitting device and to control the direction of the extracted light. The microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents to the hemisphere, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the hemisphere is the vertex of the microlens. The vertex of the microlens can be determined in the same way in any cross-sectional view. In other words, among the tangents to the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the semicircle is the vertex of the microlens.

[0192] It is also possible to define the midpoint of a microlens. In the cross section of the microlens, a line segment is imagined from the point where an arc shape ends to the point where another arc shape ends, and the midpoint of this line segment can be called the midpoint of the microlens. The cross section for determining the vertex and midpoint may be a cross section perpendicular to the insulating layer.

[0193] The microlens has a first surface having a convex portion and a second surface opposite the first surface. The second surface is preferably disposed closer to the functional layer than the first surface. To achieve this configuration, the microlens must be formed on the light-emitting device. When the functional layer is an organic layer, it is preferable to avoid processes that result in high temperatures during the manufacturing process. Furthermore, when the second surface is disposed closer to the functional layer than the first surface, it is preferable that the glass transition temperatures of all organic compounds constituting the organic layer are 100°C or higher, and more preferably 130°C or higher.

[0194] [Counter substrate] An opposing substrate may be provided on the planarization layer. The opposing substrate is called an opposing substrate because it is provided at a position corresponding to the aforementioned substrate. The constituent material of the opposing substrate may be the same as that of the aforementioned substrate. When the aforementioned substrate is defined as a first substrate, the opposing substrate may be a second substrate.

[0195] [Organic layer] The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light emitting device according to this embodiment are formed by the method shown below.

[0196] The organic compound layer constituting the organic light-emitting device according to this embodiment can be formed by dry processes such as vacuum deposition, ionization deposition, sputtering, plasma, etc. Alternatively to the dry process, a wet process can be used in which the compound is dissolved in an appropriate solvent and a layer is formed by a known coating method (for example, spin coating, dipping, casting, LB method, inkjet method, etc.).

[0197] Here, when a layer is formed by a vacuum deposition method or a solution coating method, crystallization is unlikely to occur and the layer has excellent stability over time. When a film is formed by a coating method, the film can be formed by combining with an appropriate binder resin.

[0198] Examples of the binder resin include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0199] These binder resins may be used singly or in combination as homopolymers or copolymers, and may further contain known additives such as plasticizers, antioxidants, and ultraviolet absorbers, if necessary.

[0200] [Pixel circuit] The light-emitting device may have a pixel circuit connected to the light-emitting element. The pixel circuit may be an active matrix type that controls the emission of the first light-emitting element and the second light-emitting element independently. The active matrix type circuit may be voltage-programmed or current-programmed. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have a light-emitting element, a transistor that controls the emission brightness of the light-emitting element, a transistor that controls the emission timing, a capacitor that holds the gate voltage of the transistor that controls the emission brightness, and a transistor for connecting to GND without going through the light-emitting element.

[0201] The light-emitting device has a display region and a peripheral region arranged around the display region. The display region has pixel circuits, and the peripheral region has a display control circuit. The mobility of a transistor constituting the pixel circuit may be lower than the mobility of a transistor constituting the display control circuit.

[0202] The slope of the current-voltage characteristics of the transistors that make up the pixel circuit may be smaller than the slope of the current-voltage characteristics of the transistors that make up the display control circuit. The slope of the current-voltage characteristics can be measured using the so-called Vg-Ig characteristics.

[0203] The transistors that make up the pixel circuit are transistors connected to light-emitting elements such as the first light-emitting element.

[0204] [Pixels] As described in the above embodiments, the light emitting device has a plurality of pixels. Each pixel has sub-pixels that emit different colors. The sub-pixels may emit different colors, for example, RGB.

[0205] The pixel emits light in an area also called the pixel aperture, which is the same as the first area.

[0206] By using the configuration of the light emitting device according to at least one of Embodiments 1 to 4, the distance between subpixels (from the center to the center of adjacent subpixels) can be set to, for example, 6.4 μm or less.

[0207] The pixels may be arranged in a known manner in a plan view. For example, they may be in a stripe arrangement, a delta arrangement (honeycomb arrangement), a pentile arrangement, or a Bayer arrangement. The shape of the subpixels in a plan view may be any known shape. For example, they may be rectangular, quadrilaterals such as diamonds, or hexagons. Of course, a shape that is close to a rectangle, rather than an exact shape, is included in the rectangle. The shape of the subpixels and the pixel arrangement may be combined.

[0208] [Use of the light-emitting element according to this embodiment] The light emitting device according to the present embodiment can be used as a component of a display device, etc. For example, it can be used as a light emitting device having a white light source and a color filter.

[0209] The display device may be an image information processing device having an image input unit that inputs image information from an area CCD, a linear CCD, a memory card, etc., an information processing unit that processes the input information, and displays the input image on the display unit. The display unit may have the light-emitting device described in any of the first to fourth embodiments.

[0210] Furthermore, the display unit of an imaging device or an inkjet printer may include any of the display devices according to the first to fourth embodiments. The display unit may have a touch panel function. The driving method for this touch panel function may be an infrared type, a capacitance type, a resistive film type, or an electromagnetic induction type, and is not particularly limited. The display device may also be used in the display unit of a multifunction printer.

[0211] Next, a display device according to the present embodiment will be described with reference to the drawings.

[0212] 12 is a cross-sectional view showing an example of a display device having an organic light-emitting element and a transistor connected to the organic light-emitting element. The transistor is an example of an active element. Here, a thin-film transistor (TFT) is shown as an example of the transistor, but a MOSFET using a semiconductor substrate can also be used. By using a MOSFET, the transistors in each pixel can be arranged in a smaller area in accordance with the above embodiment.

[0213] FIG. 12(a) shows an example of a pixel, which is a component of the display device according to this embodiment. The pixel has sub-pixels 10. The sub-pixels are divided into 10R, 10G, and 10B based on their light emission. The emitted colors may be distinguished by the wavelength of light emitted from the light-emitting layer, or the light emitted from the sub-pixels may be selectively transmitted or color-converted using a color filter or the like. Each sub-pixel has a reflective electrode 2, which is a first electrode, on an interlayer insulating layer 1, an insulating layer 3 covering the edge of the reflective electrode 2, an organic compound layer 4 covering the first electrode and the insulating layer, a transparent electrode 5, a protective layer 6, and a color filter 7.

[0214] A transistor and a capacitor may be disposed below or inside the interlayer insulating layer 1. The transistor and the first electrode may be electrically connected via a contact hole or the like (not shown).

[0215] The insulating layer 3 is also called a bank or pixel separation film. It covers the edges of the first electrode and surrounds the first electrode. The part where the insulating layer is not provided contacts the organic compound layer 4 and becomes the light-emitting region.

[0216] The organic compound layer 4 includes a hole injection layer 41 , a hole transport layer 42 , a first light-emitting layer 43 , a second light-emitting layer 44 , and an electron transport layer 45 .

[0217] The second electrode 5 may be a transparent electrode, a reflective electrode, or a semi-transparent electrode.

[0218] The protective layer 6 reduces the penetration of moisture into the organic compound layer. Although the protective layer is illustrated as a single layer, it may be a multi-layer. Each layer may be an inorganic compound layer and an organic compound layer.

[0219] The color filters 7 are divided into 7R, 7G, and 7B depending on their colors. The color filters may be formed on a planarization film (not shown). A resin protective layer (not shown) may be provided on the color filters. The color filters may be formed on a protective layer 6. Alternatively, the color filters may be provided on an opposing substrate such as a glass substrate and then bonded thereto.

[0220] 13 is a schematic diagram illustrating an example of a display device according to this embodiment. The display device 1000 may include a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. The touch panel 1003 and the display panel 1005 are connected by flexible printed circuits FPCs 1002 and 1004.

[0221] The display panel 1005 includes at least one light-emitting device according to Embodiments 1 to 4. A transistor is printed on a circuit board 1007. The battery 1008 may not be provided if the display device is not a portable device, or may be provided in a different location if the display device is a portable device.

[0222] The display device according to this embodiment may have color filters having red, green, and blue colors, which may be arranged in a delta arrangement.

[0223] The display device according to the present embodiment may be used as a display unit of a mobile terminal. In this case, the display device may have both a display function and an operation function. Examples of the mobile terminal include a mobile phone such as a smartphone, a tablet, and a head-mounted display.

[0224] The display device according to the present embodiment may be used as a display unit of an imaging device having an optical unit with a plurality of lenses and an imaging element that receives light that has passed through the optical unit. The imaging device may have a display unit that displays information acquired by the imaging element. The display unit may be a display unit exposed to the outside of the imaging device or a display unit disposed within a viewfinder. The imaging device may be a digital camera or a digital video camera.

[0225] 14(a) is a schematic diagram illustrating an example of an imaging device according to this embodiment. The imaging device 1100 may include a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The viewfinder 1101 may include a light-emitting device according to at least one of embodiments 1 to 4 as a display. In this case, the light-emitting device may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the speed at which the subject is moving, the possibility that the subject will be blocked by an obstruction, and the like.

[0226] Since the optimum timing for capturing an image is very short, it is better to display information as soon as possible. Therefore, it is preferable to use a light-emitting device according to any one of the first to fourth embodiments using an organic light-emitting element. This is because organic light-emitting elements have a fast response speed. Display devices using organic light-emitting elements require high display speed. In this respect, the light-emitting device according to any one of the first to fourth embodiments can be used more preferably than a liquid crystal display device.

[0227] The imaging device 1100 has an optical section (not shown). The optical section has multiple lenses, which form an image on an imaging element housed in a housing 1104. The focus of the multiple lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically. The imaging device may also be called a photoelectric conversion device. Instead of sequentially capturing images, the photoelectric conversion device can include an imaging method that detects the difference from the previous image, or a method of cutting out an image from a constantly recorded image, etc.

[0228] 14(b) is a schematic diagram illustrating an example of an electronic device according to this embodiment. The electronic device 1200 includes a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may include a circuit, a printed circuit board having the circuit, a battery, and a communication unit.

[0229] The display unit 1201 may have a light-emitting device according to at least one of the first to fourth embodiments. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit may be a biometric recognition unit that recognizes a fingerprint to unlock the device, etc. An electronic device having a communication unit may also be called a communication device. The electronic device may further have a camera function by including a lens and an image sensor. An image captured by the camera function is displayed on the display unit. Examples of the electronic device include a smartphone and a laptop computer.

[0230] 15A and 15B are schematic diagrams illustrating an example of a display device according to the present embodiment. Fig. 15A illustrates a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302 surrounded by the frame 1301. The display unit 1302 may include a light-emitting device according to at least one of the first to fourth embodiments.

[0231] The display device 1300 further includes a frame 1301 and a base 1303 that supports a display unit 1302. The base 1303 is not limited to the form shown in Fig. 15(a). For example, the bottom side of the frame 1301 may also serve as the base.

[0232] The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0233] FIG. 15(b) is a schematic diagram illustrating another example of a display device according to the present embodiment. The display device 1310 in FIG. 15(b) is configured to be bendable, and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The first display unit 1311 and the second display unit 1312 may include a light-emitting device according to at least one of the first to fourth embodiments. The first display unit 1311 and the second display unit 1312 may be a single, seamless display unit. The first display unit 1311 and the second display unit 1312 can be separated by the bending point. The first display unit 1311 and the second display unit 1312 may display different images, or the first and second display units may display a single image.

[0234] 16, an application example of a display device having the light-emitting device according to any one of the first to fourth embodiments will be described. The display device can be applied to a system that can be attached as a wearable device, such as smart glasses, an HMD, or a smart contact lens. The image capturing device and the display device used in such an application example can be an image capturing device capable of photoelectrically converting visible light, and a display device capable of emitting visible light.

[0235] 16(a) illustrates glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front side of a lens 1601 of the glasses 1600. Furthermore, a display device 1604 having a light-emitting device according to at least one of the above-described first to fourth embodiments is provided on the back side of the lens 1601.

[0236] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the display device 1604. The control device 1603 also controls the operations of the image capture device 1602 and the display device. The lens 1601 is formed with an optical system for focusing light onto the image capture device 1602.

[0237] 16(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 include a control device 1612. The control device 1612 is equipped with an image capturing device corresponding to the image capturing device 1602 and a display device 1614 corresponding to the display device 1604. An optical system for projecting light emitted by the display device 1614 in the control device 1612 is formed in the lens 1611, and an image is projected onto the lens 1611. The control device 1612 functions as a power source that supplies power to the image capturing device and the display device 1614, and also controls the operations of the image capturing device and the display device 1614.

[0238] The control device may have a gaze detection unit that detects the gaze of the wearer. The gaze detection may use infrared rays. The infrared light emitting unit emits infrared light toward the eyeball of the user who is gazing at the displayed image. An imaging unit having a light receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an image of the eyeball. By having a reduction means that reduces light from the infrared light emitting unit to the display unit in a planar view, degradation of image quality is reduced.

[0239] The gaze of the user relative to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be used for gaze detection using an image of the eyeball. One example is a gaze detection method based on the Purkinje image formed by reflection of irradiated light on the cornea.

[0240] More specifically, gaze detection processing is performed based on the pupil-corneal reflex method, which calculates a gaze vector representing the direction (rotation angle) of the eyeball based on the pupil image and Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0241] The glasses 1610 according to the embodiment may have an imaging device with a light receiving element, and may control the image displayed on the display device based on information on the user's line of sight from the imaging device.

[0242] Specifically, the display device 1614 determines a first display area on which the user gazes and a second display area other than the first display area based on the line-of-sight information. The first display area and the second display area may be determined by a control device of the glasses 1610, or may be determined and received from an external control device. In the display area of ​​the display device 1614, the display resolution of the first display area may be controlled to be higher than the display resolution of the second display area. In other words, the resolution of the second display area may be lower than that of the first field of view area.

[0243] The display area includes a first display area and a second display area different from the first display area, and a high-priority area is determined from the first display area and the second display area based on line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of areas other than the high-priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0244] Note that AI may be used to determine the first display area and the area with high priority. The AI ​​may be a model configured to estimate the angle of gaze and the distance to an object in the line of sight from the image of the eyeball, using as training data an image of the eyeball and the actual direction in which the eyeball in the image was looking. The AI ​​program may be included in the display device, the imaging device, or an external device. If included in the external device, it is transmitted to the display device via communication.

[0245] When display control is performed based on visual recognition detection, the smart glasses can be preferably applied to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured external information in real time.

[0246] In this way, by applying the light emitting device according to at least one of Embodiments 1 to 4 to various devices according to this embodiment, it is possible to make the devices smaller or to achieve higher resolution with the same size. Also, it is possible to provide devices with reduced variations during manufacturing.

[0247] The present disclosure includes, for example, the following configurations.

[0248] (Configuration 1) a plurality of pixels, each having a plurality of sub-pixels; the plurality of pixels include a first pixel and a second pixel adjacent to each other in a first direction, and a third pixel and a fourth pixel adjacent to each other in the first direction; the first pixel and the second pixel are adjacent to the third pixel and the fourth pixel in a second direction intersecting the first direction, each of the plurality of sub-pixels includes a light-emitting element disposed on a main surface of a substrate, a drive transistor connected to the light-emitting element, a write transistor connected to the drive transistor, and a first capacitance element disposed between a gate and one of a source or a drain of the drive transistor; the plurality of subpixels include a first subpixel and a second subpixel, In each of the first subpixel and the second subpixel, the gate of the driving transistor is larger in a plan view with respect to the main surface than the gate of the writing transistor in the plan view; the first subpixel of the first pixel and the second subpixel of the second pixel are adjacent to each other in the first direction, the first subpixel of the third pixel and the second subpixel of the fourth pixel are adjacent to each other in the first direction, a gate of the driving transistor of the first subpixel of the first pixel and a gate of the driving transistor of the second subpixel of the second pixel do not overlap with each other in the first direction; The light emitting device, in which the gate of the driving transistor of the first subpixel of the third pixel and the gate of the driving transistor of the second subpixel of the fourth pixel do not overlap with each other in the first direction.

[0249] (Configuration 2) the plurality of pixels include a third subpixel disposed between the first subpixel and the second subpixel; In the first pixel, the gate of the driving transistor of the first subpixel and the gate of the driving transistor of the third subpixel do not overlap in the first direction; 2. The light-emitting device according to configuration 1, wherein in the first pixel, the gate of the driving transistor of the third subpixel and the gate of the driving transistor of the second subpixel do not overlap in the first direction.

[0250] (Configuration 3) 3. The light-emitting device according to claim 1, wherein the direction from the source to the drain of the driving transistor in the first pixel and the second pixel is the same.

[0251] (Configuration 4) 4. The light emitting device according to any one of configurations 1 to 3, wherein the gates of the write transistors included in the first pixel and the second pixel at least partially overlap in the first direction.

[0252] (Configuration 5) each of the plurality of sub-pixels includes a light-emitting control transistor disposed between a first power supply line and the driving transistor, and a second capacitance element disposed between a source and a drain of the light-emitting control transistor; 5. The light emitting device according to any one of configurations 1 to 4, wherein in the first pixel and the second pixel, the gate of the driving transistor in the plan view is larger than the gate of the light emission control transistor in the plan view.

[0253] (Configuration 6) the plurality of pixels include a third subpixel disposed between the first subpixel and the second subpixel; The light-emitting device of Structure 4 or 5, wherein the gate of the emission control transistor of the first subpixel of the first pixel at least partially overlaps with the gate of the emission control transistor of the third subpixel of the second pixel in the first direction.

[0254] (Configuration 7) The light-emitting device according to any one of configurations 1 to 6, wherein each of the plurality of sub-pixels has a reset transistor, one of whose source and drain is connected to the light-emitting element and the light-emitting control transistor, and the other of whose source and drain is connected to a second power supply wiring.

[0255] (Configuration 8) The light-emitting device of Structure 7, wherein in the first pixel and the second pixel, the gate of the drive transistor in the plan view is larger than the gate of the reset transistor in the plan view.

[0256] (Configuration 9) the plurality of pixels include a third subpixel disposed between the first subpixel and the second subpixel; The light-emitting device of any one of Structures 4 to 8, wherein the gate of the driving transistor of the first sub-pixel of the first pixel is disposed between the gate of the emission control transistor of the third sub-pixel of the first pixel and the gate of the emission control transistor of the second sub-pixel of the second pixel in the first direction.

[0257] (Configuration 10) the plurality of pixels include a third subpixel disposed between the first subpixel and the second subpixel; 10. The light-emitting device of any one of configurations 4 to 9, wherein a gate of the light-emitting control transistor of the first sub-pixel of the first pixel is arranged between a gate of a writing transistor of the third sub-pixel of the first pixel and a gate of the writing transistor of the first sub-pixel of the first pixel in the first direction.

[0258] (Configuration 11) 11. The light-emitting device of any one of structures 7 to 10, wherein in the first subpixel of the first pixel, the gate of the driving transistor is arranged between the gate of the light-emitting control transistor and the gate of the reset transistor in the second direction.

[0259] (Configuration 12) 12. The light-emitting device of any one of Configurations 7 to 11, wherein the gate of the reset transistor of the second subpixel of the second pixel at least partially overlaps with the gate of the reset transistor of the first subpixel of the first pixel in the second direction.

[0260] (Configuration 13) an optical unit having a plurality of lenses, an image pickup element that receives light that has passed through the optical unit, and a display unit that displays an image picked up by the image pickup element; 13. A photoelectric conversion device, wherein the display portion comprises a light-emitting device according to any one of the first to second aspects.

[0261] (Configuration 14) 13. An electronic device comprising: a display unit having a light-emitting device according to any one of configurations 1 to 12; a housing in which the display unit is provided; and a communication unit provided in the housing for communicating with an external device.

[0262] (Configuration 15) a lens in which an imaging device and a display unit are arranged, and a control device; the display unit is provided with a light-emitting device according to any one of configurations 1 to 12; The eyeglasses, wherein the control unit controls operations of the imaging device and the display device. [Explanation of symbols]

[0263] 100 Light-emitting device 101 pixels 102 subpixels 200 light-emitting elements 201 Drive transistor 203 Write transistor

Claims

1. a plurality of pixels, each having a plurality of sub-pixels; the plurality of pixels include a first pixel and a second pixel adjacent to each other in a first direction, and a third pixel and a fourth pixel adjacent to each other in the first direction; the first pixel and the second pixel are adjacent to the third pixel and the fourth pixel in a second direction intersecting the first direction, each of the plurality of sub-pixels includes a light-emitting element disposed on a main surface of a substrate, a drive transistor connected to the light-emitting element, a write transistor connected to the drive transistor, and a first capacitance element disposed between a gate and one of a source or a drain of the drive transistor; the plurality of subpixels include a first subpixel and a second subpixel, In each of the first subpixel and the second subpixel, the gate of the driving transistor is larger in a plan view with respect to the main surface than the gate of the writing transistor in the plan view; the first subpixel of the first pixel and the second subpixel of the second pixel are adjacent to each other in the first direction, the first subpixel of the third pixel and the second subpixel of the fourth pixel are adjacent to each other in the first direction, a gate of the driving transistor of the first subpixel of the first pixel and a gate of the driving transistor of the second subpixel of the second pixel do not overlap with each other in the first direction; The light emitting device, in which the gate of the driving transistor of the first subpixel of the third pixel and the gate of the driving transistor of the second subpixel of the fourth pixel do not overlap each other in the first direction.

2. the plurality of pixels include a third subpixel disposed between the first subpixel and the second subpixel, In the first pixel, the gate of the driving transistor of the first subpixel and the gate of the driving transistor of the third subpixel do not overlap in the first direction; The light emitting device according to claim 1 , wherein in the first pixel, the gate of the driving transistor of the third subpixel and the gate of the driving transistor of the second subpixel do not overlap in the first direction.

3. The light emitting device according to claim 1 , wherein the directions from the source to the drain of the driving transistor are the same in the first pixel and the second pixel.

4. each of the plurality of sub-pixels includes a light-emission control transistor disposed between a first power supply line and the drive transistor, and a second capacitance element disposed between a source and a drain of the light-emission control transistor; The light emitting device according to claim 1 , wherein in the first pixel and the second pixel, the gate of the driving transistor in the plan view is larger than the gate of the light emission control transistor in the plan view.

5. The light emitting device according to claim 1 , wherein the gates of the write transistors included in the first pixel and the second pixel at least partially overlap in the first direction.

6. the plurality of pixels include a third subpixel disposed between the first subpixel and the second subpixel, The light-emitting device according to claim 4 , wherein the gate of the emission control transistor of the first sub-pixel of the first pixel at least partially overlaps with the gate of the emission control transistor of the third sub-pixel of the second pixel in the first direction.

7. 5. The light-emitting device according to claim 4, wherein each of the plurality of sub-pixels has a reset transistor, one of a source and a drain of which is connected to the light-emitting element and the light-emitting control transistor, and the other of which is connected to a second power supply wiring.

8. The light emitting device according to claim 7 , wherein in the first pixel and the second pixel, the gate of the drive transistor in the plan view is larger than the gate of the reset transistor in the plan view.

9. the plurality of pixels include a third subpixel disposed between the first subpixel and the second subpixel, 8. The light-emitting device according to claim 7, wherein the gate of the driving transistor of the first sub-pixel of the first pixel is disposed between the gate of the emission control transistor of the third sub-pixel of the first pixel and the gate of the emission control transistor of the second sub-pixel of the second pixel in the first direction.

10. the plurality of pixels include a third subpixel disposed between the first subpixel and the second subpixel, 8. The light-emitting device according to claim 7, wherein a gate of the light-emitting control transistor of the first sub-pixel of the first pixel is arranged between a gate of a writing transistor of the third sub-pixel of the first pixel and a gate of the writing transistor of the first sub-pixel of the first pixel in the first direction.

11. The light-emitting device according to claim 7 , wherein in the first sub-pixel of the first pixel, the gate of the drive transistor is disposed between the gate of the light-emitting control transistor and the gate of the reset transistor in the second direction.

12. The light-emitting device according to claim 11 , wherein the gate of the reset transistor of the second subpixel of the second pixel at least partially overlaps with the gate of the reset transistor of the first subpixel of the first pixel in the second direction.

13. an optical unit having a plurality of lenses, an image pickup element that receives light that has passed through the optical unit, and a display unit that displays an image picked up by the image pickup element; A photoelectric conversion device, wherein the display portion comprises the light-emitting device according to claim 1 .

14. 13. An electronic device comprising: a display unit having the light-emitting device according to claim 1; a housing in which the display unit is provided; and a communication unit provided in the housing for communicating with an external device.

15. a lens in which an imaging device and a display unit are arranged, and a control device; The display unit is provided with a light-emitting device according to any one of claims 1 to 12, The control device controls the operations of the imaging device and the light emitting device.

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