Display device

Abstract

To provide a semiconductor device with a high opening ratio or a manufacturing method for the semiconductor device, and a semiconductor device with low consumption power or a manufacturing method for the semiconductor device.SOLUTION: A semiconductor device includes a pixel part including a first thin film transistor and a driving circuit including a second thin film transistor. The first thin film transistor includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer. The gate electrode layer, the gate insulating layer, the semiconductor layer, the source electrode layer, and the drain electrode layer in the first thin film transistor has light-transmitting property. A gate electrode layer of the second thin film transistor is different from the gate electrode layer of the first thin film transistor in terms of material, and includes a conductive layer with lower resistance than the gate electrode layer of the first thin film transistor. A source electrode layer and a drain electrode layer of the second thin film transistor are different from the source electrode layer and the drain electrode layer of the first thin film transistor in terms of material, and include a conductive layer with lower resistance than the source electrode layer and the drain electrode layer of the first thin film transistor.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device, a display device, a method for manufacturing the same, or a method using the same. In particular, the present invention relates to a liquid crystal display device having a light-transmitting semiconductor layer, a manufacturing method thereof, or and a method using the same. [Background technology]

[0002] In recent years, flat panel displays such as liquid crystal displays (LCDs) have become widely used. In particular, active matrix LCDs, which have thin film transistors in each pixel, It is also commonly used in source drivers (signal line driving circuits) and gate drivers ( A scanning line driver circuit or either of the driver circuits is formed on the same substrate as the pixel section. Display devices are also being developed. The thin film transistors used in these devices use amorphous ( Those using amorphous silicon or polysilicon are often used.

[0003] However, instead of such silicon materials, transparent metal oxides have attracted attention. For example, In-Ga-Zn-O oxides are used in displays such as liquid crystal displays. It is expected to be applied to semiconductor materials required for devices, especially thin-film transistors. It is being considered to apply this to the channel layer of the gate electrode, source electrode, or A technology to improve the aperture ratio by using a transparent electrode for the drain electrode has been investigated. This has been discussed (see Patent Documents 1 and 2). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-123700 [Patent Document 2] Japanese Patent Application Laid-Open No. 2007-81362 Summary of the Invention [Problem to be solved by the invention]

[0005] Usually, a source driver and a gate driver are used as a driving circuit for controlling the thin film transistors in the pixel area. A display device in which either the drive circuit or the output driver is formed on the same substrate as the pixel section. In the device, wiring such as power lines and signal lines routed from FPC terminals, etc., and For example, the wiring connecting the thin film transistors is The conductive layer that makes up the source electrode (drain electrode) is stretched as it is, and the same island (island Therefore, the gate of a thin film transistor and the gate of another thin film transistor are The wiring that connects the gate electrode to the thin film transistor (called the gate wiring) has the same layer structure as the gate electrode of the thin film transistor. The source of a thin film transistor and the source of another thin film transistor are formed of the same structure and material. The wiring that connects the source to the thin film transistor (called the source wiring) is located on the same layer as the source electrode of the thin film transistor. The wiring such as the power supply line and the signal line is made of the same material as the gate wiring. In many cases, the gate line and the source line are formed with the same layer structure and the same material. When the light-transmitting material is used as the light-transmitting electrode and the source electrode (drain electrode), In this case, wiring such as power lines and signal lines, gate wiring and source wiring of the driving circuit section, and The gate wiring and source wiring of the element part are the same as the gate electrode and source electrode (drain electrode). In many cases, the light-transmitting element is formed using a material having light-transmitting properties.

[0006] However, indium tin oxide (ITO), indium zinc oxide (IZO) ), and indium tin zinc oxide (ITZO), which are conductive materials with transparency, are Al (Al), Molybdenum (Mo), Titanium (Ti), Tungsten (W), Neodymium ( Compared to conductive materials with light-shielding and reflective properties such as Nd, copper (Cu), and silver (Ag), The resistance is low. Therefore, it is used for wiring from FPC terminals, etc. using a transparent conductive material. When wiring such as power lines and signal lines, and wiring for the drive circuit section are formed, the wiring resistance becomes high. In particular, the drive circuit section requires high speed operation, so if the wiring resistance becomes high, The waveform of the signal propagating through the wiring becomes dull, hindering the high-speed operation of the drive circuit. This makes it difficult to supply accurate voltage and current, resulting in the pixel area not displaying properly. This makes it difficult to show or perform actions.

[0007] On the other hand, the gate electrode and source electrode (drain electrode) of the driving circuit section are made of a conductive material having a light-shielding property. When the gate wiring and source wiring are formed of a conductive material with light-shielding properties, Since the conductivity of the wiring is improved, the wiring such as power lines and signal lines routed from FPC terminals, etc. It is possible to suppress the increase in wiring resistance of the wiring and distortion of the signal waveform of the drive circuit section. In addition, the gate electrode and the source electrode (drain electrode) of the pixel portion are made of a light-transmitting material. By forming the gate electrode 100 in this manner, the aperture ratio can be improved and power consumption can be reduced.

[0008] In addition, in terms of display performance, pixels must have a large storage capacity and a high aperture ratio. By achieving a high aperture ratio for each pixel, the light utilization efficiency is improved, and the display device can be made more energy-efficient. In recent years, pixel size has become smaller, allowing for higher resolution images. However, as pixel size becomes smaller, the amount of thin-film transistors per pixel increases. The pixel aperture ratio is reduced because the area for forming the capacitor and wiring is increased. To obtain a high aperture ratio for each pixel within a certain size, the circuit elements required for the pixel circuit configuration must be arranged efficiently. It is essential to have a good layout.

[0009] In addition, in a thin film transistor using a light-transmitting semiconductor layer, the characteristics of the thin film transistor The transistors tended to be normally on and the threshold voltage was unstable, so the transistors were It was difficult to operate at high speed.

[0010] An object of one embodiment of the present invention is to reduce manufacturing costs of a semiconductor device.

[0011] An object of one embodiment of the present invention is to improve the aperture ratio of a pixel portion.

[0012] An object of one embodiment of the present invention is to improve the definition of a pixel portion.

[0013] An object of one embodiment of the present invention is to improve the operation speed of a driver circuit portion. .

[0014] An object of one embodiment of the present invention is to improve the reliability of a semiconductor device. [Means for solving the problem]

[0015] One embodiment of the present invention is a pixel portion having a first thin film transistor and a second thin film transistor. a gate electrode (gate electrode layer) of the first thin film transistor; a source electrode (also referred to as a source electrode layer), and a drain electrode (also referred to as a drain electrode layer). The resistance value of the gate electrode layer of the second thin film transistor is The resistance value of the gate electrode layer of the first thin film transistor is lower than that of the gate electrode layer of the second thin film transistor. The resistance value of the source electrode layer of the first thin film transistor is lower than the resistance value of the source electrode layer of the second thin film transistor. The resistance of the drain electrode layer of the second thin film transistor is The present invention relates to a semiconductor device having a resistance lower than that of the pole layer, and a method for manufacturing the same.

[0016] The oxide semiconductor used in this specification is represented by InMO3(ZnO)m (m>0). A thin film is formed on the oxide semiconductor layer, and a thin film transistor is fabricated using the thin film as an oxide semiconductor layer. M is one or more metal elements selected from Ga, Fe, Ni, Mn, and Co. It indicates a metal element. For example, M can be Ga, Ga and Ni, or Ga and Ni. In some cases, the oxide semiconductor may contain other metal elements than Ga, such as Fe. In addition to the metal elements contained as M, Fe, Ni and other transition metals are included as impurity elements. In this specification, the term "In" refers to a transition metal or an oxide thereof. In the oxide semiconductor layer with a structure expressed as MO3(ZnO)m (m>0), M is Ga. The oxide semiconductor with a structure containing In-Ga-Zn-O is called an In-Ga-Zn-O oxide semiconductor, and its thin film is called an I It is also called n-Ga-Zn-O based non-single crystal film.

[0017] In addition to the above, metal oxides that can be used for the oxide semiconductor layer include In-Sn-Zn-O In-Al-Zn-O system, Sn-Ga-Zn-O system, Al-Ga-Zn-O system, Sn -Al-Zn-O series, In-Zn-O series, Sn-Zn-O series, Al-Zn-O series, In- O-based, Sn-O-based, and Zn-O-based metal oxides can be used. The oxide semiconductor layer made of the material may contain silicon oxide.

[0018] The oxide semiconductor is preferably an oxide semiconductor containing In, more preferably an oxide semiconductor containing In and In order to make the oxide semiconductor layer i-type (intrinsic), dehydration is performed. Hydrogenation or dehydrogenation is effective.

[0019] In this specification, a semiconductor device is a device that can function by utilizing semiconductor characteristics. Generally, display devices, semiconductor circuits, and electronic devices are all semiconductor devices. [Effects of the Invention]

[0020] According to one embodiment of the present invention, the operation speed of a driver circuit can be improved, and the aperture ratio of a pixel portion can be increased. Furthermore, according to one embodiment of the present invention, the number of manufacturing steps can be reduced. Furthermore, one embodiment of the present invention is a method for manufacturing a display device in which a pixel portion is made high-definition. Furthermore, one embodiment of the present invention can improve the reliability of a semiconductor device. Cut. [Brief explanation of the drawings]

[0021] [Figure 1] 1A and 1B are a top view and a cross-sectional view of a semiconductor device according to one embodiment of the present invention. [Figure 2] 1A and 1B are a top view and a cross-sectional view of a semiconductor device according to one embodiment of the present invention. [Figure 3] 1A to 1C are cross-sectional views illustrating a method for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 4] 1A to 1C are cross-sectional views illustrating a method for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 5] 1A to 1C are cross-sectional views illustrating a method for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 6] 1A to 1C are cross-sectional views illustrating a method for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 7] 1A to 1C are cross-sectional views illustrating a method for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 8] 1A to 1C are cross-sectional views illustrating a method for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 9] 1A to 1C are cross-sectional views illustrating a method for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 10] 1A to 1C are cross-sectional views illustrating a method for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 11] 1A to 1C are cross-sectional views illustrating a method for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 12] 1A to 1C are cross-sectional views illustrating a method for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 13] 1A and 1B are a top view and a cross-sectional view of a semiconductor device according to one embodiment of the present invention. [Figure 14] 1A and 1B are a top view and a cross-sectional view of a semiconductor device according to one embodiment of the present invention. [Figure 15] 1A and 1B are a top view and a cross-sectional view of a semiconductor device according to one embodiment of the present invention. [Figure 16] 1A to 1C illustrate a multi-tone mask that can be applied to one embodiment of the present invention. [Figure 17] 1A and 1B are a top view and a cross-sectional view of a semiconductor device according to one embodiment of the present invention. [Figure 18] FIG. 1 is a cross-sectional view of a semiconductor device according to one embodiment of the present invention. [Figure 19] FIG. 1 is a cross-sectional view of a semiconductor device according to one embodiment of the present invention. [Figure 20] FIG. 1 is a cross-sectional view of a semiconductor device according to one embodiment of the present invention. [Figure 21] 1A and 1B are a top view and a cross-sectional view of a semiconductor device according to one embodiment of the present invention. [Figure 22] FIG. 1 is a circuit diagram of a semiconductor device according to one embodiment of the present invention. [Figure 23] 1A to 1C illustrate electronic devices using a display device according to one embodiment of the present invention. [Figure 24] 1A to 1C illustrate electronic devices using a display device according to one embodiment of the present invention. [Figure 25]1A and 1B are a circuit diagram and a timing chart of a semiconductor device according to one embodiment of the present invention. [Figure 26] 1A and 1B are a circuit diagram and a timing chart of a semiconductor device according to one embodiment of the present invention. [Figure 27] 10A and 10B are diagrams illustrating potentials of a display element in a semiconductor device according to one embodiment of the present invention. [Figure 28] 1A and 1B are diagrams illustrating a display screen of a semiconductor device according to one embodiment of the present invention. [Figure 29] 1A to 1C illustrate electronic devices using a display device according to one embodiment of the present invention. [Figure 30] 1A to 1C illustrate electronic devices using a display device according to one embodiment of the present invention. [Figure 31] 1A to 1C illustrate electronic devices using a display device according to one embodiment of the present invention. [Figure 32] 1A and 1B are a top view and a cross-sectional view of a semiconductor device according to one embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0022] The present invention will be described below with reference to the accompanying drawings. and the present invention can be practiced in various forms and without departing from the spirit and scope of the present invention. It will be readily apparent to those skilled in the art that various modifications may be made to the details and implementations. It should be noted that the present invention is not limited to the following description. In the drawings, the same parts or parts having similar functions are indicated by the same reference numerals in different drawings. However, detailed descriptions of identical parts or parts having similar functions will be omitted.

[0023] (Embodiment 1) In this embodiment, a semiconductor device according to one embodiment of the present invention will be described.

[0024] The structure of a semiconductor device according to one embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1A is a top view showing an example of a semiconductor device according to an embodiment of the present invention, illustrating a driver circuit portion; The AB cross section of FIG. 1(B) is a cross section taken along the line AB of FIG. 1(A), and the AB cross section of FIG. 1(C) is a cross section taken along the line AB of FIG. The CD cross section is a cross section taken along the line CD in FIG. 1(A). 2B is a top view showing an example of a semiconductor device according to an embodiment, illustrating a pixel portion; The F section is a cross-sectional view taken along the line EF in FIG. 2(A), and the GH section in FIG. 2(C) is a cross-sectional view taken along the line EF in FIG. FIG. 3 is a cross-sectional view taken along line GH in FIG. 2(A).

[0025] As shown in FIGS. 1 and 2, the semiconductor device of the present embodiment has a first thin film transistor. and a pixel portion having a second thin film transistor, both of which are formed on the same substrate. The semiconductor device shown in FIGS.

[0026] FIG. 1 shows a part of the drive circuit unit. The drive circuit unit shown in FIG. 1 is arranged in a first direction. and a gate wiring and a storage capacitor line, which are arranged in a direction different from the first direction, and a source line arranged in a second direction intersecting the capacitance line, and an intersection of the gate line and the source line; The pixel shown in Figure 2 includes a thin film transistor near the pixel area. The portion includes gate wirings and storage capacitor lines arranged in a first direction, and the gate wirings and storage capacitor lines The source wiring arranged in the second direction intersecting with the gate wiring and the source wiring near the intersection It has a thin film transistor.

[0027] The thin film transistor 130A of the driving circuit section shown in FIG. 1 is a channel-etched thin film transistor. 101 having an insulating surface, a gate electrode layer or a gate wiring A stack of a conductive layer 107a and a conductive layer 110a having a function as a gate insulating layer and a conductive layer 110b having a function as a gate insulating layer. the insulating film 111 having a channel formation region, the semiconductor layer 113a having a channel formation region, and the source electrode layer or A stack of the conductive layers 119a and 120a functioning as a source wiring and a drain wiring and a stack of a conductive layer 119b and a conductive layer 120b which function as electrode layers.

[0028] The conductive layer 110a is provided on a part of the conductive layer 107a and has an area smaller than that of the conductive layer 107a. The conductive layer 110b is provided on a part of the conductive layer 107b. That is, the end of the conductive layer 107a protrudes more than the end of the conductive layer 110a. However, the end of the conductive layer 107b protrudes further than the end of the conductive layer 110b. The areas of the conductive layers 110a and 110b are respectively is larger than the area of ​​each of the

[0029] The conductive layer 120a is provided on a part of the conductive layer 119a and has an area smaller than that of the conductive layer 119a. The conductive layer 120b is provided on a part of the conductive layer 119b. That is, the end of conductive layer 119a is more protruding than the end of conductive layer 120a. The end of the conductive layer 119b protrudes further than the end of the conductive layer 120b. The area of ​​the conductive layer 119a and the conductive layer 119b is b is larger than the area of ​​each of them.

[0030] The conductive layers 110a, 120a, and 120b are formed by, for example, reducing the resistance of wiring. It is preferable to use a metal material for this purpose.

[0031] The gate wiring of the drive circuit section is formed by laminating a conductive layer 107a and a conductive layer 110a. The source wiring electrically connected to the source electrode layer or the drain electrode layer of the thin film transistor is , a stack of the conductive layer 119a and the conductive layer 120a, or a stack of the conductive layer 119b and the conductive layer 120b. That is, the gate electrode layer of the thin film transistor forms the gate wiring. The conductive layer 107a and the conductive layer 110a are stacked together, and the conductive layer 107a and the conductive layer 110a are stacked together. The drain electrode layer is a stack of a conductive layer 119a and a conductive layer 120a which form a source wiring. Alternatively, it is formed as part of a stack of the conductive layer 119b and the conductive layer 120b.

[0032] In this specification, when it is explicitly stated that X and Y are connected, When X and Y are electrically connected, when X and Y are functionally connected, and when X and This includes the case where X and Y are directly connected. , device, element, circuit, wiring, electrode, terminal, conductive film, layer, etc.). The specific connection relationships, for example, are not limited to the connection relationships shown in the drawings or text, but are not limited to the connection relationships shown in the drawings or text. Connections other than those shown are also included.

[0033] The terms "first," "second," "third," etc. refer to various elements, members, areas, layers, regions, etc. Therefore, the terms "first," "second," "third," etc. are used to distinguish between elements, members, etc. The order and number of regions, layers, areas, etc. are not limited. "First" can be replaced with "second" or "third", etc.

[0034] As shown in FIG. 1, the thin film transistor 130A in the driving circuit section has a channel forming region A second gate electrode layer (back gate electrode) composed of a conductive layer 400a and a conductive layer 401a is provided above the conductive layer 400a. The back gate electrode layer may be a gate electrode layer below the back gate electrode layer. and the same potential, the lower gate electrode layer and the back gate electrode layer Gate voltages can be applied from above and below the semiconductor layer arranged on the lower gate electrode. The back gate electrode layer and the back gate electrode layer are set to different potentials. For example, the back gate electrode layer is set to a fixed potential. When the earth potential (also called GND) is set to 0V, the electrical characteristics of the TFT, such as the threshold voltage, That is, the conductive layer 107a and the conductive layer 110a are stacked, and the pressure and the like can be controlled. The stack of the conductive layer 400a and the conductive layer 401a functions as a first gate electrode layer. By making it function as a gate electrode layer, the thin film transistor 130A can be made into a four-terminal thin film transistor. It can be used as a register.

[0035] The driving circuit section shown in FIG. 1 includes a conductive layer 400a, a semiconductor layer 113a, and a conductive layer 119a. , the conductive layer 119b, the conductive layer 120a, and the conductive layer 120b have an insulating layer 123 between them.

[0036] The insulating layer 123 can be, for example, a single layer or a stack of insulating films.

[0037] Furthermore, an oxide insulating film can be provided between the insulating layer 123 and the semiconductor layer 113a. By providing the insulating film, the carrier concentration of the semiconductor layer can be reduced.

[0038] 2 is formed on a substrate 101 having an insulating surface. a conductive layer 107e having a function as a gate electrode layer or a gate wiring, and a gate insulating layer a semiconductor layer 113e having a channel formation region and a source electrode layer or a source wiring; a conductive layer 119h having a function as a drain electrode layer, and a conductive layer 119e having a function as a drain electrode layer. , including.

[0039] The conductive layer 107e, the semiconductor layer 113e, the conductive layer 119e, and the conductive layer 119h are light-transmitting. As a result, all of the thin film transistors 130B can be made of a material having the above properties. The light-transmitting material can be used.

[0040] In this specification, a light-transmitting layer or film has a visible light transmittance of 75 to 100%. When the film or layer is conductive, it refers to a light-transmitting conductive film or a The gate electrode layer, the source electrode layer, the drain electrode layer, the pixel electrode, or the like may also be referred to as a conductive layer. or other electrodes and other wiring applications as metal oxides semi-transparent to visible light The term "semitransparent to visible light" means that the transmittance of visible light is 50 to 75%. This refers to the following:

[0041] For example, an oxide semiconductor can be used for the semiconductor layer 113a or the semiconductor layer 113e. Oxide semiconductors can be grown in an inert atmosphere, for example, nitrogen or rare gases (argon, helium, etc.). When heat treatment is performed in a gas atmosphere or under reduced pressure, the oxide semiconductor layer is This results in an oxygen deficiency and low resistance, i.e., N-type (N - Then, oxide semiconductor By forming an oxide insulating film in contact with the oxide semiconductor layer and making the oxide semiconductor layer in an oxygen-excess state, a high This allows for the formation of thin, reliable films with good electrical properties. It is possible to manufacture and provide a semiconductor device having a film transistor.

[0042] Dehydration or dehydrogenation is carried out using an inert gas such as nitrogen or a noble gas (argon, helium, etc.). In an atmosphere or under reduced pressure, at 350°C or higher, preferably at 400°C or higher but lower than the strain point of the substrate Heat treatment is performed to reduce impurities such as moisture contained in the oxide semiconductor layer.

[0043] The dehydration or dehydrogenation is carried out by measuring the TDS value of 4 for the oxide semiconductor layer after the dehydration or dehydrogenation. Even when measurements were taken up to 50°C, two peaks of water were observed, and at least one peak appeared near 300°C. The heat treatment conditions are set so that no cracks are detected. Even when thin-film transistors using oxide semiconductor layers were measured up to 450°C using TDS, At least the water peak that appears around 300°C is not detected.

[0044] Then, the temperature is lowered from the heating temperature T at which the oxide semiconductor layer is dehydrated or dehydrogenated. When dehydrating or dehydrogenating, the same furnace is used to remove water or hydrogen without exposing it to the air. It is important to prevent the oxide semiconductor layer from being mixed again. Resistance, i.e., N-type (N - After that, the oxide semiconductor layer is made high-resistive and becomes I-type. When a thin film transistor is fabricated using this, the threshold voltage of the thin film transistor becomes positive. This allows realization of a so-called normally-off switching element. The gate voltage of the transistor is set to a positive threshold voltage as close as possible to 0V. This is preferable for a display device. When the threshold voltage of the thin film transistor is negative, Even if the gate voltage is 0V, current flows between the source electrode layer and the drain electrode layer. In an active matrix display device, the thin film that makes up the circuit The electrical characteristics of the film transistor are important and determine the performance of the display device. Among the electrical characteristics of thin film transistors, the threshold voltage (Vth) is particularly important. Even if the mobility is high, if the threshold voltage is high or the threshold voltage is negative, It is difficult to control the threshold voltage as a circuit. In the case of a large thin film transistor, when the driving voltage is low, it does not switch as a TFT. The transistor may not be able to perform its function and may become a load. In this case, a channel is formed only when a positive voltage is applied to the gate, and the drain current A thin film transistor from which the current flows is preferable. A channel is not formed unless the driving voltage is high. and thin-film transistors in which a channel is formed and drain current flows even under negative voltage conditions. The film transistor is not suitable as a thin film transistor for use in circuits.

[0045] In addition, the gas atmosphere used to lower the temperature from T is different from the gas atmosphere used to raise the temperature to T. It is also possible to switch to a gas atmosphere, for example, by switching to air in the same furnace where dehydration or dehydrogenation was performed. Cooling is performed by filling the furnace with high-purity oxygen gas or N2O gas without touching the material. .

[0046] The moisture content in the film is reduced by heat treatment for dehydration or dehydrogenation, and then the film containing moisture is Cool slowly (or cool) in an atmosphere that is free from dew (dew point is -40°C or less, preferably -60°C or less). By using the oxide semiconductor film, the electrical characteristics of the thin film transistor can be improved and mass production can be achieved. This will realize thin-film transistors that are both reliable and high-performance.

[0047] In this specification, under an inert gas atmosphere of nitrogen or a rare gas (argon, helium, etc.), Alternatively, heat treatment under reduced pressure is referred to as heat treatment for dehydration or dehydrogenation. The term "dehydrogenation" refers only to the process of desorption of hydrogen as H2 by this heat treatment. For convenience, this term is used to refer to dehydration or dehydrogenation, including the elimination of H, OH, etc. Let's say.

[0048] Under an inert gas atmosphere of nitrogen or rare gas (argon, helium, etc.), or under reduced pressure When the heat treatment is performed, the oxide semiconductor layer becomes oxygen-deficient by the heat treatment and has low resistance. , that is, N-type (N - After that, the area overlapping with the source electrode layer is oxygen-deficient. The high-resistivity source region (also called HRS region) is formed as a high-resistivity source region overlapping the drain electrode layer. The region is formed as an oxygen-deficient high-resistance drain region (also called an HRD region). For example, in the thin film transistor shown in FIG. A high resistance source region can also be formed in region 13a, and a semiconductor layer overlying conductive layer 119b can be formed. A high resistance drain region can also be formed in the region of layer 113a. In the transistor, a high resistance source is formed in the region of the semiconductor layer 113e that overlaps the conductive layer 119e. A high resistance dopant can be formed in the region of the semiconductor layer 113e that overlaps the conductive layer 119h. Rain regions can also be formed.

[0049] The carrier concentration of the high-resistance source region or the high-resistance drain region is 1×10 17 / cm 3 End The carrier concentration of the channel formation region is at least within the range of 1×10 17 / cm 3 Not yet The carrier concentration in this specification is the value measured by Hall effect measurement at room temperature. This refers to the carrier concentration value obtained from the measurement.

[0050] In addition, a low-resistance source region (LR) is formed between the oxide semiconductor layer and the drain electrode layer made of a metal material. A low resistance drain region (also called an S region) and a low resistance drain region (also called an LRD region) may be formed. The carrier concentration in the resistive drain region is higher than that in the high-resistive drain region (HRD region), For example, 1×10 20 / cm 3 More than 1×10 21 / cm 3 The range is as follows: In the semiconductor device in this state, the conductive layer 119a shown in FIG. 1 corresponds to the low-resistance source region. The drain layer 119b corresponds to the low-resistance drain region.

[0051] Then, at least a part of the dehydrated or dehydrogenated oxide semiconductor layer is brought into an oxygen-excess state. By this, the resistance is increased, that is, the I-type is formed, and a channel forming region is formed. The treatment for bringing part of the dehydrogenated oxide semiconductor layer into an oxygen-excess state includes dehydration or forming an oxide insulating film in contact with the oxide semiconductor layer by sputtering or by oxidation; Heat treatment after deposition of an insulating film, or heat treatment in an oxygen-containing atmosphere after deposition of an oxide insulating film Alternatively, after forming an oxide insulating film, the film is heated in an inert gas atmosphere and then cooled in an oxygen atmosphere. After the oxide insulating film was formed, it was heated in an inert gas atmosphere and then dried in ultra-dry air (dew point -4 This is done by cooling the mixture to a temperature below 0°C, preferably below -60°C.

[0052] In addition, at least a part of the dehydrated or dehydrogenated oxide semiconductor layer (gate electrode (gate By selectively creating an oxygen-excess state in the area (the area overlapping with the electrode layer), high resistance is achieved. That is, it can be made into an I-type. This allows the formation of a channel forming region. For example, a metal electrode such as Ti is placed on a dehydrated or dehydrogenated oxide semiconductor layer. and a source electrode layer and a drain electrode layer, which do not overlap with the source electrode layer and the drain electrode layer. The exposed region can be selectively made into an oxygen-excess state to form a channel forming region. When selectively creating an oxygen-excess state, a high-resistance source region overlapping the source electrode layer and a drain A high-resistance drain region overlapping the source electrode layer is formed, and the high-resistance source region and the high-resistance drain region are formed. The region between the source electrode layer and the source electrode layer is a channel forming region. The gate electrode layer is formed in a self-aligned manner between the gate electrode layer and the drain electrode layer.

[0053] This allows the fabrication of a semiconductor device having a thin film transistor with good electrical characteristics and high reliability. and can be provided.

[0054] Note that the oxide semiconductor layer overlapping with the drain electrode layer (and the source electrode layer) has a high resistance. By forming a drain region, it is possible to improve reliability when forming a drive circuit. Specifically, by forming a high-resistance drain region, the high-resistance drain can be The structure is such that the conductivity can be changed stepwise from the drain region to the channel formation region. Therefore, the drain electrode layer is connected to a wiring that supplies a high power supply potential VDD. When the transistor is operated with a high resistance, even if a high electric field is applied between the gate electrode layer and the drain electrode layer, The drain region acts as a buffer, preventing the application of a local high electric field, and the breakdown voltage of the thin film transistor This can result in an improved configuration.

[0055] In addition, a high-resistance drain electrode layer (and a source electrode layer) is formed in the oxide semiconductor layer overlapping the drain electrode layer (and the source electrode layer). By forming a drain region (or a high-resistance source region), It is possible to reduce the leakage current in the channel formation region. By forming a drain region (or a high-resistance source region), the drain electrode layer and the source electrode layer The drain electrode layer, the drain electrode layer, and the a high-resistance drain region on the electrode layer side, a channel forming region, a high-resistance source region on the source electrode layer side, In this case, in the channel forming region, the low resistance drain electrode layer The leakage current that flows from the drain region to the channel formation region is suppressed when the thin film transistor is turned off. It can be concentrated near the interface between the gate insulating layer, which acts as a resistance, and the channel forming region, Leakage current in the channel region (part of the surface of the channel formation region that is separated from the gate electrode layer) The flow can be reduced.

[0056] In addition, a high-resistance source region overlapping the source electrode layer and a high-resistance drain region overlapping the drain electrode layer are formed. By forming the gate electrode region so that it overlaps with a part of the gate electrode layer, the drain current can be more effectively The electric field strength near the end of the pole layer can be reduced.

[0057] The gate wiring electrically connected to the gate electrode layer of the thin film transistor 130B in the pixel portion is , which is formed of the conductive layer 107e, and is the source electrode of the thin film transistor 130B in the pixel portion. The source wiring electrically connected to the conductive layer 119e or the drain electrode layer is That is, the gate electrode layer of the thin film transistor 130B is formed of the gate The conductive layer 107e is a part of the conductive layer 107e that constitutes the source wiring. The electrode layer is formed of a part of the conductive layer 119e or 119h that constitutes the source wiring.

[0058] Note that the wiring functioning as the gate electrode layer is a wiring functioning as a gate wiring (or is connected to at least one layer of wiring that functions as a gate wiring, Alternatively, at least one layer of the gate wiring may be The line is formed in a state where the area is larger than that of another layer, and at least one of the layers having the larger area is The portion can be considered to function as a gate electrode layer.

[0059] At least a part of the gate wiring functions as a gate electrode layer or a part of the gate electrode layer. Alternatively, it can be thought that the gate wiring of the pixel section or a part of the gate wiring is and functions as a gate electrode layer or a part of the gate electrode layer of a thin film transistor. On the conductive layer that mainly functions as a gate wiring of the drive circuit part or as a part of the gate wiring, It can also be said that a functional conductive layer is provided.

[0060] It also functions as a source wiring including a source electrode layer of a thin film transistor in a pixel portion. The wiring functions as a source wiring including a source electrode layer of a thin film transistor in the driving circuit section. Wiring (or functioning as source wiring including the source electrode layer of the thin film transistor of the driving circuit section) It can also be thought of as being connected to at least one layer of interconnects that function. That is, a part of the source wiring of the driving circuit section is connected to the source electrode layer of the driving circuit section or the pixel section. It can be considered that the source electrode layer in the pixel area functions as a part of the source electrode layer. A source electrode layer or a conductive layer that mainly functions as a part of the source electrode layer is provided on the conductive layer. a conductive layer that mainly functions as a part of the source wiring or the It is also possible.

[0061] The thin film transistor 130B in the pixel portion has a conductive layer 400e above the channel forming region. It is also possible to include a second gate electrode layer (also referred to as a back gate electrode layer) made of The back gate electrode layer is electrically connected to the lower gate electrode layer and has the same potential. The gate voltage is applied from above and below to the semiconductor layer arranged between the gate electrode layer and the back gate electrode layer. In addition, the lower gate electrode layer and the back gate electrode layer can be applied with different potentials. For example, when the back gate electrode layer is set to a fixed potential, GND, or 0V, the electrical characteristics of the TFT are The properties, such as the threshold voltage, can be controlled.

[0062] The pixel portion shown in FIG. 2 includes a conductive layer 107g that functions as a lower electrode and a dielectric layer 107b that functions as a The insulating film 111 functions as a gate insulating layer, and the conductive film 112 functions as an upper electrode. The conductive layer 107g and the conductive layer 119g form a storage capacitor. A storage capacitor line is formed. Furthermore, the conductive layer 400e, the semiconductor layer 113e, and the conductive layer 11 The insulating layer 122 is provided between the insulating layers 9h and 119e. The insulating layer 122 is the same as the insulating layer 123 in FIG. Since the procedures are similar, the explanation will be omitted.

[0063] The conductive layer 107g and the conductive layer 119g are formed using a light-transmitting material. At least a part of one of the conductive layers 107g and 119g is a capacitor wiring (capacitor It functions as part of the capacitance wiring layer or capacitance wiring, and is a part of either the other. However, it can function as an electrode of a capacitor element or a part of an electrode of a capacitor element. In FIG. 2, a case where a capacitor element is provided in the pixel portion has been described, but the present invention is not limited to this. For example, a light-transmitting conductive layer and a light-transmitting conductive layer may be provided in the driver circuit portion. a region where a conductive layer having a lower resistance value than the conductive layer having a light-transmitting property is overlapped; When the conductive layer having a lower resistance than the conductive layer has a light-shielding property, At least a part of one of the conductive layers 107g and 119g is a capacitance distribution. It is preferable that the conductive layer functions as a part of a line or a capacitance wiring. In the region where the conductive layer having light-transmitting properties is not disposed, the conductive layer 107 At least a part of the other of the conductive layer 119g and the conductive layer 119g is an electrode of a capacitor element, or It is preferable that the electrode function as a part of the electrode of the capacitor element.

[0064] In the semiconductor device of this embodiment, the wiring having a function as an electrode of the capacitor is At least one of the wirings that function as wiring (or the wirings that function as capacitance wiring) It can also be thought of as being connected to the capacitance wiring. One layer is formed in a state where the area is larger than another layer that the capacitance wiring has, and the area is It can be thought that a part of the enlarged region functions as an electrode of the capacitance element. In addition, the light-transmitting conductive layer is formed to have a larger area than the light-shielding conductive layer. It can be considered that a part of the large-area conductive layer region functions as an electrode of the capacitor element. In addition, at least a part of the capacitance wiring in the pixel portion is connected to the electrode of the capacitance element or the capacitance element. It can be thought of as functioning as a part of the electrode of the capacitor. At least one layer can be considered to function as an electrode of the capacitor element. It can be considered that part of the light-transmitting conductive layer functions as an electrode of the capacitor. In addition, a conductive film that mainly functions as an electrode of a capacitor element or a part of an electrode of a capacitor element in a pixel portion On the layer, a conductive layer is provided which mainly functions as a capacitance wiring or a part of the capacitance wiring of the drive circuit section. It can also be thought of as being

[0065] In addition, the conductive layer having a light-shielding property and the conductive layer having a light-transmitting property are mainly formed in a part of the region (mainly The conductive layer area with light-shielding properties is connected to the capacitor wiring routed from the FPC or the drive circuit section. and a part of the capacitance wiring, and another part of the area (an area consisting of only a conductive layer having light transmission properties) ) can function as an electrode of the capacitor element in the pixel area or as a part of the electrode of the capacitor element. In the region where the light-shielding conductive layer and the light-transmitting conductive layer overlap, Since the area has a high conductivity (low resistance) and a conductive layer with light-shielding properties, It is preferable that the capacitor wiring be made to function as a capacitor wiring or a part of the capacitor wiring routed from the FPC. Alternatively, the light-transmitting conductive layer in the region where the light-shielding conductive layer is not disposed may be The layer preferably functions as an electrode of a capacitor element in a pixel portion or as a part of the electrode of a capacitor element. Desirable.

[0066] When a thin film transistor is fabricated on a gate wiring, the size of the thin film transistor is Although it depends on the gate wiring width of the thin film transistor, in this embodiment, the thin film transistor is In order to form a thin film transistor, it is possible to form a large thin film transistor. For example, as shown in FIG. 32, a thin film transistor having a width larger than the gate wiring width may be used. By enlarging the size of the thin film transistor, the current capacity can be increased. This allows for a high-precision image sensor to be used at high resolution, thereby shortening the time required to write signals to pixels. A fine display device can be provided.

[0067] The storage capacitor has an insulating film that functions as a gate insulating film as a dielectric and a Therefore, the storage capacitor is configured as follows: By using a light-transmitting conductive layer, the aperture ratio can be improved. By forming the storage capacitor using a light-transmitting conductive layer, the storage capacitor can be made larger. Therefore, the potential of the pixel electrode is maintained even when the thin film transistor is turned off. In addition, the feedthrough potential can be reduced.

[0068] As described above, the semiconductor devices shown in FIGS. 1 and 2 are each formed by forming thin-film transistors on the same substrate. The pixel portion has a gate electrode layer of a thin film transistor in the pixel portion. the source electrode layer is formed using a light-transmitting conductive layer, and the semiconductor layer is formed using a light-transmitting semiconductor layer. The gate electrode layer and the source electrode layer of the thin film transistor of the driving circuit section are formed using a conductive material. The electrode layer is a structure formed by using a conductive layer having a lower resistance value than the conductive layer having light transmission properties. By adopting this structure, it is possible to improve the aperture ratio in the pixel area and also to achieve high definition. By reducing the wiring resistance in the drive circuit section, the waveform of the signal can be This suppresses distortion, reduces power consumption, and improves operating speed. In addition, the larger the size of the semiconductor device, the greater the influence of wiring resistance. Therefore, the structure of the semiconductor device of this embodiment is advantageous in that it can be easily manufactured in a large scale. It is also preferable.

[0069] In addition, in the semiconductor device shown in FIGS. 1 and 2, the electrodes and wirings of the storage capacitor in the pixel portion have light-transmitting properties. By using such a structure, the opening Even if the area of ​​the storage capacitor is increased, the aperture ratio can be improved. The decrease can be suppressed.

[0070] 1 and 2, the semiconductor device shown in FIG. 1 has a wiring such as a power supply line and a signal line in a pixel portion, a gate The gate wiring and the source wiring are formed using a conductive layer having light transmission properties, and the power supply of the driving circuit section is The wiring such as the wiring and signal lines, the gate wiring, and the source wiring are formed from a conductive layer having light transmission properties. A structure using a conductive layer with a low resistance value can also be used. This suppresses distortion of the signal waveform, reduces power consumption, and improves operation. Speed ​​can be improved.

[0071] The semiconductor device shown in FIGS. 1 and 2 has a light-transmitting property and a thin film transistor in a pixel portion. a conductive layer overlapping the channel formation region of the conductive material having a lower resistance than the light-transmitting conductive material; a conductive material that is formed using the conductive material and overlaps with a channel formation region of a thin film transistor in a driver circuit portion; The conductive layer provided in the pixel portion and the driver circuit portion may also be formed. (Conductive layer overlapping the channel formation region) is a thin film transistor of the pixel section or the driver circuit section. It is a conductive layer that can function as the second electrode (back gate electrode layer) of the transistor. The conductive layer is not necessarily provided, but by providing a back gate electrode layer, the conductive layer can be thin. The threshold voltage of thin film transistors can be controlled, improving the reliability of thin film transistors. It is possible.

[0072] Next, an example of a manufacturing method of a semiconductor device according to this embodiment mode will be described with reference to FIGS. 3, 5, 7, 9 and 10 show cross sections of the drive circuit section taken along line AB in FIG. 1. 4, 6, 8, 11, and 12 are diagrams showing the pixel portion along the line EF shown in FIG. 3, 5, 7, 9 and 10 show cross sections of the source wiring portion 301, the thin film The film transistor section 302 and the gate wiring section 303 are shown in FIGS. 4, 6, 8, and 11. 12 shows a source wiring section 331, a thin film transistor section 332, and a gate wiring section 333. 3 to 12. In the manufacturing method shown in FIGS. Although a manufacturing method using a multi-tone mask will be described, the present invention is not limited to this.

[0073] First, as shown in FIG. 3(A) and FIG. 4(A), a conductive film 102 and a conductive film 103 are formed on a substrate 101. 103 is formed by sputtering. This process can be carried out continuously. It is also possible to perform continuous sputtering using multiple chambers. By forming the conductive film 102 and the conductive film 103, the throughput is improved and impurities and It is possible to prevent the inclusion of dust.

[0074] The substrate 101 is preferably made of a material with high light transmittance. For example, a glass substrate or a plastic substrate may be used. A tin substrate, an acrylic substrate, a ceramic substrate, or the like can be used.

[0075] It is preferable that the light transmittance of the conductive film 102 is sufficiently high. is preferably higher than the light transmittance of the conductive film 103.

[0076] The conductive film 102 is made of a conductive material that is transparent to visible light, such as In—Sn—Zn—O In-Al-Zn-O system, Sn-Ga-Zn-O system, Al-Ga-Zn-O system, Sn -Al-Zn-O series, In-Zn-O series, Sn-Zn-O series, Al-Zn-O series, In- It can be formed using O-based, Sn-O-based, and Zn-O-based metal oxides. For example, sputtering, vacuum deposition (electron beam deposition, etc.), arc discharge ion deposition, It can be formed by plating or spraying. In this case, the film is formed using a target containing 2% by weight or more and 10% by weight or less of SiO2, SiO that inhibits crystallization in a transparent conductive film x (X>0) may be included. Therefore, when a heat treatment for dehydration or dehydrogenation is carried out in a later step, the metal oxide is crystalline. In addition, it is possible to suppress the degradation of the conductive film by laminating multiple films of the above-mentioned materials. In the case of a laminated structure, the light transmittance of all the multiple films must be sufficiently high. High is preferable.

[0077] It is preferable that the resistance value of the conductive film 103 is sufficiently low and the conductivity is sufficiently high. The resistance value of the conductive film 102 is preferably lower than the resistance value of the conductive film 103. Since the conductive film 102 functions as a conductive layer, the resistance value of the conductive film 102 is lower than the resistance value of the insulating layer. It is preferable that

[0078] The conductive film 103 is made of molybdenum, titanium, chromium, tantalum, tungsten, or aluminum. The material is made of metals such as copper, neodymium, scandium, etc., or alloys containing these as the main components. and forming a single layer structure or a laminated structure by sputtering or vacuum deposition. In addition, when the conductive film 103 is formed to have a layered structure, the conductive film 103 can be transparent to any of the plurality of films. A conductive film having optical properties may also be included.

[0079] When the conductive film 103 is formed on the conductive film 102, the two films may react with each other. For example, if the upper surface of the conductive film 102 (the surface in contact with the conductive film 103) is ITO In this case, the lower surface of the conductive film 103 (the surface in contact with the conductive film 102) is made of aluminum. In this case, a chemical reaction occurs. It is preferable to use a high melting point material for the surface (the surface in contact with the conductive film 102). Examples of melting point materials include molybdenum (Mo), titanium (Ti), tungsten (W), and nickel. Then, a low resistance film is formed on the surface of a high melting point material. It is preferable to use a material with a low resistance value to form the conductive film 103 as a multilayer film. Examples of conductive materials include aluminum (Al), copper (Cu), and silver (Ag). When the film 103 is formed in a laminated structure, the first layer is made of molybdenum (Mo) and the second layer is made of aluminum. The first layer is aluminum (Al), the third layer is molybdenum (Mo), or the first layer is molybdenum ( Mo), the second layer is aluminum (Al) containing a small amount of neodymium (Nd), and the third layer is molybdenum It can be formed by laminating Mo.

[0080] Although not shown, a base film made of silicon oxide or nitride is formed between the substrate 101 and the conductive film 102. Silicon, silicon oxynitride, or the like can also be formed. By forming an underlayer between the substrate 101 and the element, mobile ions and impurities can be diffused from the substrate 101 to the element. This suppresses scattering and prevents deterioration of the device characteristics.

[0081] Next, as shown in FIG. 3B and FIG. 4B, in the driving circuit portion, In the pixel area, the resist masks 106a and 106b are thick. Resist masks 106e, 106f, and 106g that are thinner than 106a and 106b The resist masks 106a, 106b, 106e, 106f, and 106g are For example, a multi-tone mask can be used to form the pattern. A resist mask having regions of different thickness can be formed. This reduces the number of photomasks used and the number of manufacturing steps. In this embodiment, the steps of forming patterns of the conductive film 102 and the conductive film 103 and forming a gate electrode layer In the process of forming a light-transmitting conductive layer that functions as a This can be done.

[0082] A multi-tone mask is a mask that can perform exposure with multiple levels of light intensity. Representative examples include: Exposure is performed at three levels of light intensity: exposed area, semi-exposed area, and unexposed area. By doing so, a single exposure and development process can be performed to produce a film having multiple (typically two) thicknesses. A resist mask can be formed. Therefore, by using a multi-tone mask, This allows reducing the number of masks required.

[0083] 16(A-1) and 16(B-1) show cross sections of a typical multi-tone mask. (A-1) shows a gray-tone mask 180, and FIG. 16(B-1) shows a half-tone mask. Mask 185 is shown.

[0084] The gray-tone mask 180 shown in FIG. 16(A-1) is a light-shielding mask on a light-transmitting substrate 181. The light-shielding portion 182 is formed by a light-shielding layer, and the diffraction grating portion 183 is formed by a pattern of the light-shielding layer. It consists of 83.

[0085] The diffraction grating section 183 is made up of slits and dots spaced at intervals equal to or less than the resolution limit of the light used for exposure. The amount of light transmitted is controlled by the grating portion 183. The slits, dots or meshes provided in the It may also be something like that.

[0086] The light-transmitting substrate 181 may be made of quartz or the like. The light-shielding layer constituting the grating portion 183 may be formed using a metal film, and preferably, chromium. Alternatively, it may be made of chromium oxide or the like.

[0087] When the gray-tone mask 180 is irradiated with light for exposure, the pattern shown in FIG. 16(A-2) is formed. In this way, the light transmittance in the area overlapping the light-shielding portion 182 is 0%, and The light transmittance in the area where the diffraction grating portion 183 is not provided is 100%. The light transmittance of the grating portion 183 is in the range of approximately 10% to 70%, and the slits of the diffraction grating , and can be adjusted by the spacing of the dots or meshes.

[0088] The halftone mask 185 shown in FIG. 16(B-1) is a semi-transparent mask formed on a light-transmitting substrate 186. It is composed of a semi-transparent portion 187 formed by a transparent layer and a light-shielding portion 188 formed by a light-shielding layer. It has been done.

[0089] The semi-transparent portion 187 is a layer of MoSiN, MoSi, MoSiO, MoSiON, CrSi, etc. The light-shielding portion 188 can be formed using a material similar to the light-shielding layer of a gray-tone mask. It may be formed using a metal film, preferably made of chromium or chromium oxide. .

[0090] When the halftone mask 185 is irradiated with light for exposure, the pattern shown in FIG. 16(B-2) is formed. In this way, the light transmittance in the area overlapping the light-shielding portion 188 is 0%, and the light-shielding portion 188 is also semi-transparent. The light transmittance in the area where the semi-transparent portion 187 is not provided is 100%. The light transmittance in 87 is generally in the range of 10% to 70%, and the type or shape of the forming material is The thickness can be adjusted by the film thickness to be formed.

[0091] By using a multi-tone mask and performing exposure and development, a resist mask with regions of different film thickness can be produced. Also, resist masks with different film thicknesses can be formed. do.

[0092] Next, as shown in FIG. 3(C) and FIG. 4(C), resist masks 106a, 106b, and 106c are formed. Etching is performed using 106e, 106f, and 106g. The conductive film 102 and the conductive film 103 are selectively removed, and the conductive layer 107a and the conductive layer 108 are removed. a, conductive layer 107b, conductive layer 108b, conductive layer 107e, conductive layer 108e, conductive layer 107 f, conductive layer 108f, conductive layer 107g, and conductive layer 108g can be formed.

[0093] Next, as shown in FIG. 3(D) and FIG. 4(D), resist masks 106a, 106b, and 106c are formed. Ashing of 06e, 106f and 106g is performed. For example, ashing with oxygen plasma is performed. The resist masks 106a and 106b are removed (reduced) by ashing. ) to form resist masks 109a and 109b, and the conductive layers 108a and In addition, this ashing process exposes a part of the resist film 108b in the pixel area, which has a thin film thickness. The photomasks 106e, 106f and 106g are removed, and the conductive layers 108e, 108f and 108g are removed. By using a resist mask formed with a multi-tone mask in this way, Since an additional resist mask is not required, the process can be simplified.

[0094] Next, as shown in FIG. 5(A) and FIG. 6(A), resist masks 109a and 109b are formed. As a result, a part of the conductive layer 108a is removed, and the conductive layer 110a is etched. A conductive layer 110b is formed by removing a part of the conductive layer 108b. 8e, 108f and 108g are removed, and then the resist masks 109a and 109b are removed. By removing a portion of the conductive layer 108a, a portion of the conductive layer 107a is exposed. By removing a portion of the conductive layer 108b, a portion of the conductive layer 107b is exposed. When the conductive layer 108e is removed, the conductive layer 107e is exposed, and the conductive layer 108f is removed. By removing the conductive layer 107f, the conductive layer 107f is exposed, and by removing the conductive layer 108g, The conductive layer 107g is exposed.

[0095] As shown in FIG. 5A, the resist masks 106a and 106b are retracted (reduced). The conductive layers 108a and 108b are etched using the resist masks 109a and 109b. and peripheries of the conductive layers 108a and 108b (the resist masks 109a and The area exposed from the end of the conductive layer 107a (area exposed from the end of the conductive layer 109b) is also etched at the same time. The end of the conductive layer 107b protrudes beyond the end of the conductive layer 108a (110a), and the end of the conductive layer 107b The conductive layers 107a and 107b are formed on the conductive layer 108b (110b) and the conductive layer 107a and 107b are formed on the conductive layer 108b (110b). The area of ​​each of the conductive layers 110a and 110b is larger than the area of ​​each of the conductive layers 110a and 110b. In addition, the conductive layers 110a and 110b and the conductive layers 107a and 107b are conductive layers 1 The area where the conductive layers 107a and 107b overlap with the conductive layers 110a and 110b is formed. a and 110b and the conductive layers 107a and 107b do not overlap.

[0096] When removing the light-shielding conductive layer, a part of the light-transmitting conductive layer (e.g., a part of the light-shielding conductive layer) is also removed. The surface area that was in contact with the conductive layer may be removed. The extent to which the layer is removed depends on the interface between the light-transmitting conductive layer and the light-shielding conductive layer. Therefore, for example, when the surface is covered with a conductive layer having a light-shielding property, The thickness of the light-transmitting conductive layer in the region covered with the light-shielding conductive layer is In many cases, the thickness of the conductive layer having light-transmitting properties is thicker than that of the conductive layer having light-transmitting properties.

[0097] The light-transmitting conductive layer is left, and only the light-shielding conductive layer is removed by wet etching. In this case, etching with a high selectivity between the light-transmitting conductive layer and the light-shielding conductive layer is performed. For example, the first layer is made of molybdenum (Mo), the second layer is made of fluorine (H2O), and the third layer is made of fluorine (H2O). The first layer is aluminum (Al) and the third layer is molybdenum (Mo), or the first layer is Molybdenum (Mo), aluminum (Al) containing a small amount of neodymium (Nd) in the second layer, 3 When using a layer of molybdenum (Mo), for example, phosphoric acid, nitric acid, acetic acid, and It can also be carried out using a mixed acid containing water. By using this mixed acid, It is also possible to give a tapered shape. In addition to improving the coating property by etching with an etching solution, rinsing with pure water, and drying This is a simple process with a high throughput, and therefore, the etching of the conductive layer having the light-shielding property can be performed. It is suitable for use in chipping.

[0098] Next, as shown in FIG. 5(B) and FIG. 6(B), the conductive layers 107a, 107b, 107e, 107f and 107g and the conductive layers 110a and 110b are covered and function as a gate insulating layer. An insulating film 111 capable of performing the above-described process is formed.

[0099] The insulating film 111 may be formed to have a single layer structure or a stacked structure of multiple films. When the above films are laminated, it is preferable that all the films have sufficiently high light transmittance. In particular, it is preferable that the light transmittance is sufficiently high within the pixel portion.

[0100] The insulating film 111 covering the light-transmitting conductive layer and the light-shielding conductive layer has a thickness of 50 to 50 The insulating film 111 is formed to a thickness of about 0 nm by various methods such as sputtering or plasma CVD. A film containing silicon oxide or silicon nitride is formed as a single layer or multilayer by the CVD method. Specifically, a film containing silicon oxide, a film containing silicon oxynitride, or a film containing silicon nitride oxide is used. The insulating film 100 may be formed as a single layer structure or may be formed by appropriately laminating these films.

[0101] The insulating film 111 is preferably made of a light-transmitting material or a material with high light transmittance. However, the light transmittance is higher than that of the conductive layers 107a, 107b, 107e, 107f, and 107g. Therefore, when comparing the light transmittance of both, The light transmittance of the insulating film 111 is determined by the conductive layers 107a, 107b, 107e, 107f, and 107 It is desirable that the light transmittance of the insulating film is higher than or equal to the light transmittance of the insulating film. Since 111 may be formed over a large area, in order to improve the light utilization efficiency, In particular, in the pixel area, the insulating film 111, the conductive layer 107e , 107f, and 107g are also preferably made of a light-transmitting material.

[0102] Next, a semiconductor film 112 is formed on the insulating film 111 .

[0103] The semiconductor film 112 may be formed to have a single layer structure or a stacked structure of multiple films. When multiple films are laminated, it is preferable that all of the films have sufficiently high light transmittance. Similarly, it is preferable that the light transmittance is sufficiently high, especially in the pixel area. The conductive film 112 is formed of a material having light-transmitting properties or a material with high light transmittance. The semiconductor film 112 can be formed using, for example, an oxide semiconductor. As for the compound semiconductors, In-Ga-Zn-O system non-single crystal film, In-Sn-Zn-O system, In -Al-Zn-O system, Sn-Ga-Zn-O system, Al-Ga-Zn-O system, Sn-Al- Zn-O series, In-Zn-O series, Sn-Zn-O series, Al-Zn-O series, In-O series, S In this embodiment, an In—Ga—Zn oxide semiconductor film is used. The film is formed by sputtering using an -O-based oxide semiconductor target. The film is formed under a rare gas (typically argon) atmosphere, an oxygen atmosphere, or a rare gas (typically It can be formed by sputtering in an atmosphere of argon and oxygen. When using the sputtering method, a target containing 2% to 10% by weight of SiO2 is used. The oxide semiconductor film is then coated with SiO, which inhibits crystallization. x (x>0) and crystallized This can also prevent the problem from occurring.

[0104] Before the semiconductor film 112 is formed by sputtering, argon gas is introduced to form a plasma. In this case, the reverse sputtering is performed to generate dust particles, and the dust particles adhering to the surface of the insulating film 111 are removed. Inverse sputtering is a method in which a target is sputtered in an argon atmosphere without applying a voltage to the target. A voltage is applied to the substrate using an RF power supply to form plasma near the substrate, modifying the surface. It is to be noted that nitrogen, helium, oxygen, etc. may be used instead of the argon atmosphere.

[0105] Note that the oxide semiconductor film is subjected to heat treatment (dehydration) to reduce impurities such as moisture after the film formation. This allows for the thin film transistor to be This leads to improved electrical properties and reliability of the capacitor. The treatment may be carried out at a temperature of, for example, 350° C. or higher but lower than the strain point of the substrate, preferably 400° C. or higher but lower than the strain point of the substrate. It is preferable to carry out the oxidation treatment in a full temperature range. After the semiconductor film was heat-treated in a nitrogen atmosphere, it was It is preferable to prevent water and hydrogen from entering the oxide semiconductor film. From the heating temperature T at which hydrogenation or dehydrogenation is performed, the same furnace is heated to a temperature high enough to prevent water from entering again. Specifically, the temperature is gradually cooled in a nitrogen atmosphere until it drops by 100°C or more below the heating temperature T. In addition, the atmosphere is not limited to nitrogen, and rare gases such as helium, neon, and argon may also be used. The dehydration or dehydrogenation can also be carried out under atmospheric or reduced pressure.

[0106] In the heat treatment, nitrogen or a rare gas such as helium, neon, or argon is used. For example, nitrogen or hydrogen introduced into the heat treatment device is preferably not included. The purity of rare gases such as helium, neon, and argon is preferably 6N (99.9999%) or higher. or 7N (99.99999%) or more (i.e., impurity concentration is 1 ppm or less, preferably It is preferable to keep the concentration below 0.1 ppm.

[0107] The light transmittance of the conductive layers 107a, 107b, 107e, 107f, and 107g is It is preferable that the light transmittance is higher than or approximately the same as that of the conductive film 112. Therefore, the conductive layers 107a, 107b, 107e, 107f, and 107g can be used over a large area. In this case, in order to improve the light utilization efficiency, a higher aperture ratio is obtained to reduce power consumption. This is because, in order to achieve a reduction, it is preferable that the light transmittance of a film having a larger area is high. Furthermore, conductive layers 107a, 107b, 107e, 107f, and 107g are connected to gate wiring This is also because the thin film transistor is used in the storage capacitor section, the source wiring section, and the thin film transistor section. do.

[0108] In addition, the light transmittance of the insulating film 111 is higher than that of the semiconductor film 112. This is because the insulating film 111 is used over a larger area than the semiconductor film 112. In order to improve the light utilization efficiency, it is necessary to have a film with a larger area and high light transmittance. This is because it is preferable.

[0109] Next, a resist mask (not shown) is formed on the semiconductor film 112. As shown in Figures 5(C) and 6(C), the semiconductor device is processed into the desired shape. Conductor layers (also called island-shaped semiconductor layers) 113a and 113e are formed. Hydrofluoric acid, hydrochloric acid, etc. diluted to 0.05% can be used.

[0110] The semiconductor layers 113a and 113e are semiconductor layers (active layers) of thin film transistors or thin film transistors. It can function as a part of the semiconductor layer (active layer) of the transistor. The layers 113a and 113e can function as a capacitor or part of a capacitor. Furthermore, the semiconductor layers 113a and 113e reduce parasitic capacitance at the intersections of the wirings. It is possible to make it function as a membrane to separate the particles.

[0111] Next, as shown in FIG. 5(D) and FIG. 6(D), the semiconductor layer 113a, the semiconductor layer 113e, and Conductive films 114 and 115 are deposited by sputtering so as to cover the insulating film 111. This process can be carried out continuously using a multi-chamber. It is also possible to perform sputtering. By using a membrane, throughput can be improved and the inclusion of impurities and dust can be suppressed. .

[0112] It is preferable that the light transmittance of the conductive film 114 is sufficiently high. is preferably higher than the light transmittance of the conductive film 115.

[0113] The conductive film 114 may be made of any one of the materials applicable to the conductive film 102 shown in FIGS. A single layer structure or a laminated structure can be formed using a plurality of layers.

[0114] The conductive film 114 is preferably made of substantially the same material as the conductive film 102. The term "substantially the same material" refers to materials with the same main element, and the same impurity level. The types and concentrations of elements contained may differ. When a light-transmitting conductive film is formed by sputtering or evaporation, the material If materials can be shared, the same manufacturing equipment can be used. can.

[0115] The resistance value of the conductive film 114 is preferably higher than the resistance value of the conductive film 115 .

[0116] The conductive film 115 is made of any one of the materials applicable to the conductive film 103 shown in FIGS. A single layer structure or a laminated structure can be formed using a plurality of layers.

[0117] The conductive film 115 is made of a material different from that of the conductive film 103. Alternatively, the conductive film 115 may have a stacked structure different from that of the conductive film having a light-blocking property. It is preferable that the optical fiber 100 is configured to have the following structure:

[0118] When the conductive film 115 is formed on the conductive film 114, the two films may react with each other. For example, when the upper surface of the conductive film 114 (the surface in contact with the conductive film 115) is ITO, In the case where the lower surface of the conductive film 115 (the surface in contact with the conductive film 114) is made of aluminum, Therefore, in order to avoid this, the lower surface ( It is preferable to use a high melting point material for the surface in contact with the conductive film 114. For example, Examples of materials include molybdenum (Mo), titanium (Ti), tungsten (W), and neodymium. (Nd) and other materials are used on top of these films. It is preferable to make the conductive film 115 a multi-layer film. Examples of these materials include aluminum (Al), copper (Cu), and silver (Ag). These materials have light-shielding and reflective properties. It has photonic properties.

[0119] Next, as shown in FIGS. 7A and 8A, a resist mask 118 is formed on the conductive film 115. a, 118b, 118e, 118g, and 118h are formed. , 118b, 118e, 118g, and 118h are obtained by using a multi-tone mask. A resist mask having regions of different thicknesses, which is disposed in the drive circuit section. The masks 118a and 118b are formed by resist masks 118e and 118g, and and 118h, and has a thicker film thickness.

[0120] Next, as shown in FIG. 7(B) and FIG. 8(B), resist masks 118a, 118b, and 11 The conductive film 114 and the conductive film 115 are etched using 8e, 118g, and 118h. By performing etching, the conductive layer 119a, the conductive layer 120a, the conductive layer 119b, conductive layer 120b, conductive layer 119e, conductive layer 120e, conductive layer 119g, conductive layer 120g, A conductive layer 119h and a conductive layer 120h can be formed. and 113e, a portion of the channel forming region can be etched.

[0121] Next, as shown in FIG. 7(C) and FIG. 8(C), resist masks 118a, 118b, and 118c are formed. Ashing 18e, 118g, and 118h. For example, ashing with oxygen plasma. The resist masks 118a and 118b are removed (reduced) by ashing. ) to form resist masks 121a and 121b, and the conductive layers 120a and In addition, this ashing process exposes a part of the resist film 120b in the pixel area, which is thin in film thickness. The masks 118e, 118g and 118h are removed, and the conductive layers 120e, 120g and 120h is exposed. By using a resist mask formed with a multi-tone mask in this way, Since an additional resist mask is not required, the process can be simplified.

[0122] Next, as shown in FIGS. 9A and 11A, resist masks 121a and 121b are formed. The conductive layers 120a, 120b, 120e, 120g, and 120h are etched using As a result, the conductive layer 104 is left with parts of the conductive layers 120a and 120b removed. The conductive layers 119a and 119b are formed, and a part of the conductive layers 119a and 119b is exposed. The end of the conductive layer 119a protrudes beyond the end of the conductive layer 104a, and the end of the conductive layer 119b protrudes beyond the end of the conductive layer 104b. The conductive layers 120e, 120g, and 120h protrude beyond the end of the conductive layer 104b. The conductive layers 119e, 119g, and 119h are exposed by removing the etching. After this, the resist masks 121a and 121b are removed.

[0123] As a result, the thin film transistors 130A and 130B and the capacitor element shown in FIGS. The thin film transistor 130B and the capacitor element 131 can be formed by Furthermore, in the pixel portion, a source wiring portion and a gate wiring portion can be formed. The portion can also be a light-transmitting element.

[0124] In this etching step, the lower semiconductor layers 113a and 113e are left unetched. For example, the etching time can be controlled. In addition, the materials constituting the semiconductor layers 113a and 113e and the conductive layers 119a and 119b , 119e, 119g, and 119h are made of materials with high etching selectivity. For example, a material for forming the semiconductor layer is a gold material containing Sn. Metal oxide materials (e.g., SnZnO x (x>0), or SnGaZnO x (x>0, etc.) The conductive layers 119a, 119b, 119e, 119g, and 119h are made of In addition, when removing the conductive layer having a light-shielding property, a transparent conductive layer may be used. A part of the conductive layer (for example, the surface part that was in contact with the conductive layer having the light-shielding property) is also removed. Therefore, for example, the thickness of the conductive layers 119a and 119b may be In many cases, the thickness is thicker than that of 9e, 119g, and 119h.

[0125] Next, as shown in FIG. 9(B) and FIG. 11(B), the fabricated thin film transistors 130A and 130B are An insulating layer 123 is formed on the capacitor elements 130A and 130B and the capacitor element 131. The insulating layer 123 is a single layer. The layer structure or the laminated structure can be formed. When the laminated structure is formed, It is preferable that the light transmittance of the insulating layer 123 is sufficiently high. The insulating layer 123 functions as a film for protecting the thin film transistor, the capacitor, and the like. The unevenness caused by elements or wiring is reduced, and thin film transistors, capacitor elements, wiring, etc. It can function as a film that flattens the surface on which the film is formed.

[0126] In particular, the thin film transistor 130B and the capacitor element 131 in the pixel portion are formed by a light-transmitting element. Therefore, the area where they are arranged can also be used as a display area. In order to achieve this, the thin film transistor 130B, the capacitor element 131, or the wiring It is beneficial to reduce the unevenness and make the top surface on which these elements are formed flat.

[0127] The insulating layer 123 is preferably formed of a film containing silicon nitride. Alternatively, the insulating layer 123 may be made of an organic material. Examples of organic materials include acrylic, polyimide, polyimide, and polyisocyanate. These organic materials are suitable because they have a high ability to flatten uneven surfaces. Therefore, when the insulating layer 123 has a laminated structure of a silicon nitride film and an organic material film, For this purpose, it is preferable to place a silicon nitride film on the lower side and a film of an organic material on the upper side.

[0128] Before the insulating layer 123 is formed, an oxide film is formed in contact with the semiconductor layer 113a and the semiconductor layer 113e. It is also possible to form an insulating film, which reduces the carrier concentration in the semiconductor layer. This can be done.

[0129] In this case, the oxide insulating film has a thickness of at least 1 nm and is formed by an oxide method such as sputtering. The oxide insulating film can be formed by using an appropriate method that does not mix impurities such as water and hydrogen into the film. The substrate temperature during film formation should be between room temperature and 300°C. Film formation by the argon method is performed under a rare gas (typically argon) atmosphere, an oxygen atmosphere, or a rare gas atmosphere. The reaction can be carried out under an atmosphere of nitrogen (typically argon) and oxygen. A silicon oxide target or a silicon target can be used as the target. Silicon oxide is formed by sputtering using a target in an oxygen and nitrogen atmosphere. The oxide semiconductor layer having a low resistance due to dehydration or dehydrogenation can be formed by The oxide insulating film formed by this process is resistant to moisture, hydrogen ions, and OH - It does not contain impurities such as An inorganic insulating film is used to block external penetration, typically a silicon oxide film or a nitride film. A silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, or the like is used.

[0130] Furthermore, heat treatment (preferably at 200°C) is carried out in an inert gas atmosphere or an oxygen gas atmosphere. The temperature may be between 250°C and 350°C, for example. The insulating layer 113a and the grooves of the semiconductor layer 113e are heated in a state where they are in contact with the oxide insulating film.

[0131] Through the above steps, the oxide semiconductor film after deposition is dehydrated or dehydrogenated. The heat treatment is performed to reduce the resistance and change it into a high-resistance source region or a high-resistance drain region. Then, a part of the high-resistance drain region is selectively made into an oxygen-excess state. The channel formation region overlapping with the electrode layer is I-type, and the high-resistance source region overlapping with the source electrode layer The high-resistance drain region overlapping the drain electrode layer is formed in a self-aligned manner. The entire oxide semiconductor layer is made i-type, and becomes an oxide semiconductor layer including a channel formation region.

[0132] Next, as shown in FIG. 9(C) and FIG. 11(C), a conductive film 206 and a The conductive film 207 is formed by sputtering. This process is carried out continuously. It is also possible to perform continuous sputtering using a chamber. By forming the conductive film 206 and the conductive film 207, the throughput is improved and the contamination of impurities and dust is prevented. This can suppress the inflow of

[0133] It is preferable that the light transmittance of the conductive film 206 is sufficiently high. is preferably higher than the light transmittance of the conductive film 207.

[0134] The conductive film 206 is made of any one of the materials applicable to the conductive film 102 shown in FIGS. A single layer structure or a laminated structure can be formed using a plurality of layers.

[0135] The conductive film 206 has substantially the same material as the conductive film 102 and the conductive film 114. It is preferable that the materials be made of substantially the same material. For example, the types and concentrations of elements considered to be impurities may differ. By using the same material, a conductive film with light transmission can be formed by sputtering or vapor deposition. In this case, there is an advantage in that materials can be shared. If materials can be shared, the same manufacturing equipment can be used. This allows the manufacturing process to run smoothly and improves throughput. This makes it possible to reduce costs.

[0136] It is preferable that the resistance value of the conductive film 207 is sufficiently low and the conductivity is sufficiently high. The resistance value of 206 is preferably higher than the resistance value of the conductive film 207 .

[0137] The conductive film 207 is made of any one of the materials applicable to the conductive film 103 shown in FIGS. The conductive film 206 can be formed into a single layer structure or a stacked layer structure using a plurality of conductive films. It is preferable that the conductive film 207 is formed of a material different from that of the conductive film 207. Alternatively, the conductive film 207 may be formed to have a layered structure different from that of a conductive film having a light-shielding property. This is because the temperature applied in the manufacturing process is such that the conductive film 206 and the conductive film 2 This is because the temperature of the conductive film 207 is usually different from that of the conductive film 207. The conductive film 207 is often formed of a single layer or a multilayer structure of a material having a low wiring resistance. It is preferable that the conductive film 206 is formed of a light-transmitting material. It is preferable that:

[0138] When the conductive film 207 is formed on the conductive film 206, the two films may react with each other. For example, when the upper surface of the conductive film 206 (the surface in contact with the conductive film 207) is ITO, In the case where the lower surface of the conductive film 207 (the surface in contact with the conductive film 206) is aluminum, Therefore, in order to avoid this, the lower surface ( It is preferable to use a high melting point material for the surface in contact with the conductive film 206. For example, Examples of materials include molybdenum (Mo), titanium (Ti), tungsten (W), and neodymium. (Nd) and other materials are used on top of these films. It is preferable to make the conductive film 207 a multi-layer film. Examples of these materials include aluminum (Al), copper (Cu), and silver (Ag). These materials have light-shielding and reflective properties. It has photonic properties.

[0139] Next, as shown in FIG. 9(D) and FIG. 11(D), a resist mask 300 is formed on the conductive film 207. The resist masks 300a and 300e are formed using a multi-tone mask. By using the resist mask, the thickness of the resist mask is varied. The resist mask 300a to be applied is thicker than the resist mask 300e to be applied to the pixel area. It has a film thickness.

[0140] Next, as shown in FIG. 10(A) and FIG. 12(A), resist masks 300a and 300b are formed. The conductive film 206 and the conductive film 207 are etched using 00e. 400a, 400e and conductive layers 105a, 105e can be formed.

[0141] Next, as shown in FIG. 10(B) and FIG. 12(B), resist masks 300a and 300e For example, ashing with oxygen plasma may be performed. The mask 300a is recessed (reduced) by ashing, so that the resist mask 116a The ashing process also reduces the thickness of the conductive layer 105a. The resist mask 300e in the thin pixel area is removed, and the conductive layer 105e is exposed. By using a resist mask formed with a multi-tone mask, it is possible to This eliminates the need for a separate process, thereby simplifying the process.

[0142] Next, as shown in FIG. 10(C) and FIG. 12(C), using a resist mask 116a, The conductive layer 105a is etched. As a result, a part of the conductive layer 105a is removed. The conductive layer 401a is formed, and a part of the conductive layer 400a is exposed. The conductive layer 400a is removed, and the conductive layer 400e is exposed. The conductive layer 400a and the conductive layer 401a are respectively protruding from the end of the conductive layer 400a. In other words, the area of ​​the conductive layer 400a is different from the area of ​​the conductive layer 400b. After etching, the resist mask 116a is removed. Remove.

[0143] Next, as shown in FIG. 10(D) and FIG. 12(D), the conductive layers 400a, 400e and the conductive An insulating layer 208 is formed on the layer 401a. The insulating layer 208 has a single layer structure or a multilayer structure. When a laminated structure is formed, the light transmittance of each film is sufficient. The insulating layer 208 is preferably formed on the conductive layers 400a, 400e and 401a. It can function as an insulating film that reduces the unevenness caused by the surface roughness and makes the surface flat. The insulating layer 208 can function as a planarization film. The insulating layer 208 is made of silicon nitride. The silicon nitride film has the effect of blocking impurities. Alternatively, the insulating layer 208 may be formed of a film containing an organic material. Examples of suitable organic materials include acrylic, polyimide, and polyamide. These organic materials are suitable because they have a high ability to flatten uneven surfaces. When the layer 208 is made of a laminated structure of a silicon nitride film and an organic material film, the silicon nitride film is placed on the bottom side. It is preferable to place a film of an organic material on the upper surface of the film.

[0144] The insulating layer 123 and the insulating layer 208 have a function as a color filter. By providing a color filter on the substrate 101, it is possible to provide a color filter on the opposing substrate. There is no need to install a filter, and a margin is required to adjust the position of the two boards. This eliminates the need for a wiring board, which makes it easier to manufacture the panel.

[0145] Next, a resist mask is formed on the insulating layer 208, and etching is performed using the resist mask. By this, a part of the insulating layer 123 and the insulating layer 208 is removed, and the contact hole 11 is formed. Form 7.

[0146] Next, as shown in FIG. 12(E), a conductive film is formed on the insulating layer 123 and the contact hole 117. A resist mask is formed on the conductive film, and etching is performed using the resist mask. By doing so, a part of the conductive film is removed, and conductive layers 124e, 124g, and 124h are formed. The conductive film can be formed to have a single layer structure or a laminated structure. It is preferable that the light transmittance of each film is sufficiently high.

[0147] The conductive layers 124e, 124g, and 124h can function as pixel electrodes. Alternatively, the conductive layers 124e, 124g, and 124h may function as electrodes of a capacitor. Therefore, the conductive layers 124e, 124g, and 124h have light-transmitting properties. It is desirable that the light source 100 be made of a material having high light transmittance.

[0148] The conductive layers 124e, 124g, and 124h are connected to the source via the contact holes 117. Wiring, source electrode layer, gate wiring, gate electrode layer, pixel electrode, capacitance wiring, electrode of capacitance element Therefore, the conductive layers 124e, 124g, and 124 h can function as a wiring for connecting conductors.

[0149] The conductive layers 124e, 124g, and 124h and the conductive film 102 are made of substantially the same material. Alternatively, the conductive layers 124e, 124g, and 124h may be formed of a conductive material. Preferably, the conductive layer 12 and the film 114 are made of substantially the same material. 4e, 124g, and 124h and the conductive film 206 are made of substantially the same material. In this way, by forming the layers from roughly the same material, it is possible to perform sputtering or vapor deposition. When a light-transmitting conductive film is formed, there is an advantage that the material can be shared. If they can be shared, the same manufacturing equipment can be used, and the manufacturing process can run smoothly. , it is possible to improve throughput and reduce costs. .

[0150] As described above, by the steps shown in FIGS. 3 to 12, the driver circuit is formed on the same substrate using six masks. The thin film transistor 130A in the pixel portion and the thin film transistor 130B in the pixel portion are separately manufactured. The capacitor element 131 can also be formed on the same substrate. The transistors 130B and the capacitance elements 131 are arranged in a matrix corresponding to the individual pixels. This allows the substrate to be used as one of the substrates for manufacturing an active matrix display device. For convenience, this specification will refer to such a substrate as an active matrix substrate.

[0151] In addition, in the manufacturing method of the semiconductor device shown in FIGS. 3A to 12B, a light-transmitting conductive film and a light-transmitting conductive film are formed. a conductive film having a resistance value lower than that of the light-transmitting conductive film is stacked on the conductive film having a light-transmitting property, By selectively etching the laminated film using a mask, a light-transmitting conductive film is obtained. and a driver circuit portion including a laminate of conductive layers having a lower resistance than a light-transmitting conductive film. A gate electrode layer, a source electrode layer, or a drain electrode layer of a thin film transistor and a light-transmitting The gate electrode layer, source electrode layer, or This allows the driver circuit and the drain electrode layer to be formed without increasing the number of masks. In the pixel portion, a gate electrode layer, a source electrode layer, or a drain electrode layer having a different structure is formed. This allows for a reduction in the number of manufacturing steps, thereby reducing manufacturing costs. It is possible.

[0152] In addition, in the manufacturing method of the semiconductor device shown in FIGS. 3A to 12B, a light-transmitting conductive film and a light-transmitting conductive film are formed. a conductive film having a resistance value lower than that of the light-transmitting conductive film is stacked on the conductive film having a light-transmitting property, By selectively etching the laminated film using a mask, a light-transmitting conductive film is obtained. and a driver circuit portion including a laminate of conductive layers having a lower resistance than a light-transmitting conductive film. The gate wiring, source wiring, or other wiring of the thin film transistor and the light-transmitting The gate wiring, source wiring, or Other wiring can also be formed, which allows for the formation of a large number of masks without increasing the number of masks. In the driver circuit section and the pixel section, gate wiring, source wiring, or other wirings having different structures are used. Since the routing wiring can be made separately, the number of manufacturing steps can be reduced, and the manufacturing Costs can be reduced.

[0153] In the manufacturing method of the semiconductor device shown in FIGS. 3 to 12, the thin film transistor in the pixel portion In the same process, a storage capacitor is formed by a transparent conductive layer and a dielectric layer. This allows the thin-film transistor to be formed in the pixel area without increasing the number of masks. Since the capacitor and the storage capacitor can be separately manufactured, the number of manufacturing steps can be reduced. This reduces manufacturing costs.

[0154] In the manufacturing method of a semiconductor device shown in FIGS. 3 to 12, a transparent conductive film is formed on a light-transmitting conductive film. A conductive film having a lower resistance than the conductive film having a photoresistivity is stacked, and the stacked film is then exposed using, for example, a multi-tone mask. By selectively etching the layer film, a light-transmitting conductive film and a light-transmitting conductive film are formed. The thin film transistor of the drive circuit section is composed of a laminate of conductive layers with a lower resistance than the conductive film. A thin film of a pixel portion formed by a conductive layer overlapping a channel forming region and a conductive film having light transmitting properties A conductive layer can also be formed so as to overlap the channel formation region of the transistor. The conductive layer overlapping the channel forming region of each thin film transistor The conductive layer can function as a back gate electrode layer. By using the method for manufacturing a semiconductor device, it is possible to reduce the number of masks required for the driver circuit portion and the pixel portion. Since conductive layers with different structures can be fabricated separately, the number of manufacturing steps can be reduced. This allows for a reduction in manufacturing costs.

[0155] Next, an example of the structure of a semiconductor device different from the pixel portion shown in FIG. 2 will be described with reference to FIG. FIG. 13A is a top view of the semiconductor device according to this embodiment, and FIG. 13(A) is a cross-sectional view of IJ in FIG. 13(A). The difference from FIG. 2 is that the lower electrode of the storage capacitor The area of ​​the storage capacitor is increased, and the upper electrode of the storage capacitor is made into the pixel electrode 124. The size of the volume part is preferably 70% or more, or 80% or more of the pixel pitch. The configuration other than the drive circuit section, the storage capacitor section, and the storage capacitor wiring is the same as the configuration shown in FIG. Therefore, detailed description will be omitted.

[0156] By adopting such a structure, the source wiring and the source electrode layer or the drain electrode layer When forming the capacitor, it is not necessary to form an upper electrode of the storage capacitor, so the transmittance can be increased. Furthermore, a large storage capacitor portion with high transmittance can be formed. By increasing the potential of the pixel electrode, even when the thin film transistor is turned off, In addition, the feedthrough potential can be reduced. Even if the storage capacitor is formed large, the aperture ratio can be increased and power consumption can be reduced. In addition, since the insulating film is made of two layers, pinholes formed in the insulating film can be prevented. This prevents short circuits between layers due to the above, reduces unevenness in the capacitance wiring, and suppresses alignment disorders of the liquid crystal. It can be done.

[0157] Next, an example of a semiconductor device structure different from that shown in FIG. 2 will be described with reference to FIG. 14. FIG. 14(A) is a top view of the semiconductor device according to this embodiment, and FIG. 14(B) is a top view of the semiconductor device according to FIG. 14(A). The difference from FIG. 2 is that the lower electrode of the storage capacitor is enlarged, The capacitor wiring, the gate wiring, and the source wiring are formed of a light-transmitting conductive layer. The size of the storage capacitor is more than 70% of the pixel pitch. , or preferably 80% or more. In the following, the configuration other than the storage capacitor section is the same as that shown in FIG. Since the configuration is similar, detailed description will be omitted.

[0158] By adopting such a configuration, the capacitance wiring can be formed using a material with low resistance and high conductivity. This reduces signal waveform distortion and voltage drop due to wiring resistance. In addition, the unevenness caused by the contact holes of the pixel electrodes can cause the liquid crystal to become disoriented. Even if there is a problem, the light leakage can be prevented by the conductive layer of the capacitor wiring that has a light-shielding property. In addition, by increasing the storage capacitance, it is possible to Even if the voltage of the pixel electrode is low, the voltage of the pixel electrode can be easily maintained. Furthermore, even if the storage capacitor is formed to be large, the aperture ratio can be increased. This allows for reduced power consumption.

[0159] Next, an example of a semiconductor device structure different from that shown in FIG. 2 will be described with reference to FIG. 15. FIG. 15(A) is a top view of the semiconductor device according to this embodiment, and FIG. 15(B) is a top view of the semiconductor device according to FIG. 15(A). The difference from FIG. 2 is that the The light-transmitting conductive layer that functions as the upper electrode of the storage capacitor portion is enlarged. The size of the storage capacitor is more than 70% of the pixel pitch. In the following, the configuration other than the storage capacitor section is the same as that shown in FIG. Since it is the same as the above, detailed description will be omitted.

[0160] By adopting such a configuration, it is possible to form a large storage capacitor with high transmittance. By increasing the storage capacitance, the pixel can be charged even when the thin film transistor is turned off. The potential of the electrode is easily maintained. Also, the feedthrough potential can be reduced. Furthermore, even if the storage capacitor is formed large, the aperture ratio can be increased, and power consumption can be reduced. The force can be reduced.

[0161] This embodiment mode can be freely combined with other embodiment modes.

[0162] (Embodiment 2) A thin film transistor is manufactured according to one embodiment of the present invention, and the thin film transistor is used in a pixel portion, In order to manufacture a semiconductor device (also called a display device) having a display function by using the driver circuit, In addition, a part or the whole of a driving circuit in which thin film transistors are formed and a thin film transistor A pixel section with a transistor formed thereon is integrally formed on the same substrate to form a system-on-panel. This can be done.

[0163] The display device includes a display element. The display element includes a liquid crystal element (also called a liquid crystal display element), a light-emitting element, A light-emitting element (also called a light-emitting display element) can be used. This category includes elements whose brightness is controlled by the light emitted from the light source, specifically inorganic EL (Electroluminescent) luminescence elements, organic EL elements, etc. Also, electronic ink A display medium whose contrast changes due to an electrical effect can also be applied.

[0164] The display device also includes a panel in which a display element is sealed, and a controller for the panel. Furthermore, the display device is manufactured by a method for manufacturing the display device. In the process, the element substrate, which corresponds to a form before the display element is completed, is used to transmit the current to the display element. The element substrate is specifically provided with a means for supplying a voltage to each of the pixels of the display element. The electrode may be formed only, or the conductive film that will become the pixel electrode may be formed after the conductive film is formed. It may be in a state before etching to form pixel electrodes, or any other form may be used. Get hooked.

[0165] In this specification, the term "display device" refers to an image display device, a display device, or an optical device. It also refers to connectors, such as FPC (Flexible Printed Circuit) integrated circuit) or TAB (Tape Automated Bon ding) tape or TCP (Tape Carrier Package) Modules with printed wiring boards attached to the end of TAB tape or TCP or the display element is mounted on an IC (integrated circuit) by the COG (Chip On Glass) method. The display device also includes all modules in which the display device (circuit) is directly mounted.

[0166] The appearance and cross section of a liquid crystal display panel, which is one mode of a semiconductor device, will be described with reference to FIG. FIG. 17A shows a configuration of thin film transistors 4010 and 4011 and a liquid crystal element 401. 3 is sealed between a first substrate 4001 and a second substrate 4006 by a sealant 4005. 17(B) is a cross-sectional view taken along the line QR in FIG. 17(A). is equivalent to

[0167] The thin film transistors 4010 and 4011 shown in FIG. 17 each include a gate electrode layer, a gate insulating layer, and a The edge portions of the insulating layer, the semiconductor layer, the source electrode layer, and the drain electrode layer are tapered. By tapering the edges of each layer, the thickness of the layer formed on top of each layer can be reduced. Improved coverage and prevention of step discontinuities improve the yield of semiconductor devices. However, this embodiment is not limited to this configuration, and the gate electrode layer, the gate insulating layer, The edge of the semiconductor layer, the source electrode layer, or the drain electrode layer is not necessarily tapered. In addition, one or more layers may be tapered.

[0168] A pixel portion 4002, a signal line driver circuit 4003, and a scanning A sealing material 4005 is provided so as to surround the line driver circuit 4004. A second substrate 4002 is disposed on the signal line driver circuit 4003 and the scanning line driver circuit 4004. 006 is provided. Therefore, the pixel portion 4002, the signal line driver circuit 4003, and the scanning line The driver circuit 4004 includes a first substrate 4001, a sealing material 4005, a second substrate 4006, and a In this embodiment mode, the pixel portion 4002 is sealed together with the liquid crystal 4008. 4003 and a scanning line driver circuit 4004 are disposed on a first substrate 4001. An example of integral formation will be described. 4 is formed on a separately prepared substrate using a thin film of polycrystalline or single-crystalline semiconductor. Alternatively, a film transistor may be formed and attached to the first substrate 4001. In the LCD panel 7, a pixel portion 4002, a signal line driver circuit 4003, and a scanning line driver circuit 4004 are Illustratively, a thin film transistor formed of a nitride semiconductor is shown.

[0169] A pixel portion 4002 and a signal line driver circuit 4003 are provided on a first substrate 4001. The scanning line driver circuit 4004 has a plurality of thin film transistors. A thin film transistor 4010 included in the element part 4002 and a signal line driver circuit 4003 The thin film transistor 4010 and the thin film transistor 4011 are shown as examples. The transistor 4011 corresponds to a thin film transistor using an N-type semiconductor layer. Although the storage capacitor is not shown in FIG. 2, the storage capacitor shown in FIG. 2 and FIG. 13 to FIG. A storage capacitor can also be formed.

[0170] As described above, the driving circuit portion is electrically connected to the gate electrode layer of the thin film transistor. The gate wiring including the gate electrode layer is formed by a conductive layer having a light-transmitting property and a highly conductive layer having a light-shielding property. and a thin conductive layer, and the thin film transistor source electrode layer or drain electrode layer The source wiring including the source electrode layer electrically connected to the light-transmitting conductive layer and the conductive layer The pixel section is made of a thin film transistor. The gate wiring including the gate electrode layer electrically connected to the gate electrode layer of the transistor has a light-transmitting property. The thin film transistor is formed of only a conductive layer. The source wiring including the electrically connected source electrode layer is formed only by a conductive layer having light transmitting properties. That is, the gate electrode layer electrically connected to the gate electrode layer of the thin film transistor in the pixel portion is The gate wiring including the gate electrode layer is electrically connected to the gate electrode layer of the thin film transistor in the drive circuit section. The gate electrode layer is connected to the gate wiring. The thin film transistor in the pixel portion is electrically connected to the source electrode layer or the drain electrode layer. The source wiring including the connected source electrode layer is connected to the source voltage of the thin film transistor of the drive circuit section. A source wiring including a source electrode layer electrically connected to the electrode layer or the drain electrode layer is formed. The insulating film is formed of a part of a light-transmitting conductive layer.

[0171] The drive circuit section includes gate wiring including a gate electrode layer, source wiring including a source electrode layer, and a backplane. The gate is formed by stacking a light-transmitting conductive layer and a light-shielding conductive layer with high conductivity in this order. This reduces the wiring resistance and power consumption. When a back gate is provided, one of the conductive films constituting the back gate is provided with a conductive film having a light-shielding property. Because it uses a conductive film, it is possible to block light between pixels. In other words, it is called a black matrix. Therefore, light can be shielded between pixels without using a light shielding layer.

[0172] In this way, the storage capacitor portion of the pixel portion is also formed of a conductive layer having light-transmitting properties. The aperture ratio can be improved. In addition, the storage capacitor portion is formed of a conductive layer having a light-transmitting property. By doing so, the storage capacitor can be enlarged, and the thin film transistor is turned off. Even when the pixel electrode is turned off, the potential of the pixel electrode is easily maintained.

[0173] The pixel electrode 4030 of the liquid crystal element 4013 is a thin film. The transistor 4010 is electrically connected to the liquid crystal element 4010 through a wiring 4040. The counter electrode 4031 of 4013 is formed on the second substrate 4006. The overlapping portion of the counter electrode 4031 and the liquid crystal 4008 corresponds to the liquid crystal element 4013. do.

[0174] The first substrate 4001 and the second substrate 4006 may be made of glass or metal (typically, stainless steel). Stainless steel, ceramics, and plastics can be used. , FRP (Fiberglass-Reinforced Plastics) board, PV F (polyvinyl fluoride) film, polyester film, or acrylic resin film Also, aluminum foil can be covered with PVF film or polyester film. It is also possible to use a sheet having a structure in which the sheet is sandwiched between two thin films.

[0175] Also, 4035 is a spherical spacer, which is used to separate the pixel electrode 4030 and the counter electrode 4031. The insulating film is selectively etched to control the cell gap. Alternatively, a spacer obtained by

[0176] A signal line driver circuit 4003 and a scanning line driver circuit 4004 or a pixel section 4 Various signals and potentials given to the F002 are transmitted through the wirings 4014 and 4015. Powered by PC4018.

[0177] In this embodiment, the connection terminal electrode 4016 is connected to the pixel electrode 403 of the liquid crystal element 4013. The lead wiring 4015 is formed from the same conductive film as the wiring 4040. The same conductive film is used.

[0178] The connection terminal electrode 4016 is connected to the terminal of the FPC 4018 via the anisotropic conductive film 4019. are electrically connected.

[0179] Although not shown, the liquid crystal display device shown in this embodiment may have an alignment film. Alternatively, a liquid crystal that exhibits a blue phase without using an alignment film may be used. When the temperature of a cholesteric liquid crystal is increased, the phase transitions from the cholesteric phase to the isotropic phase. The blue phase appears only in a narrow temperature range. In order to improve the liquid crystal 400, a liquid crystal composition containing 5% by weight or more of a chiral agent was used. The liquid crystal composition containing the liquid crystal exhibiting the blue phase and the chiral agent has a response speed of 1 ms It is short (below ec), optically isotropic, so alignment treatment is not required, and viewing angle dependency is small. .

[0180] In addition to the transmissive liquid crystal display device, the present invention can also be applied to a semi-transmissive liquid crystal display device.

[0181] In addition, in a liquid crystal display device, a polarizing plate is provided on the outer side (viewing side) of the substrate, and a colored layer (color The polarizing plate is placed in the order of the substrate. The laminated structure of the polarizing plate and the colored layer is not limited to the present embodiment, and may be provided on the polarizing side. The setting can be made appropriately depending on the materials of the plate and colored layer and the manufacturing process conditions. A light-shielding film that functions as a rack matrix may be provided.

[0182] The oxide semiconductor layer of the thin film transistor 4011 for the driver circuit is formed on the insulating layer 4021. A conductive layer 4050 is provided in a position overlapping with the channel formation region. By providing the layer at a position overlapping the channel forming region of the nitride semiconductor layer, In this case, the amount of change in the threshold voltage of the thin film transistor 4011 can be reduced. The conductive layer 4050 may have the same potential as the gate electrode layer of the thin film transistor 4011. The conductive layer may be different from the first gate electrode layer and may function as the second gate electrode layer. The potential of the pixel 4050 may be GND, 0V, or may be in a floating state. A transparent electrode is formed at a position overlapping with a channel formation region of the oxide semiconductor layer of the thin film transistor 4010. The conductive layer 4060 may be formed using a conductive material having optical properties.

[0183] An insulating layer 4021 is formed as a planarization insulating film. The planarization insulating layer 454 may be formed using a material and a method similar to those of the planarization insulating layer 454 described in Embodiment 1. Heat-resistant organic materials such as acrylic, benzocyclobutene, polyamide, and epoxy In addition to the above organic materials, low dielectric constant materials (low-k materials), silicon Use fluororesin, PSG (phosphorus glass), BPSG (borophosphorus glass), etc. In addition, by laminating a plurality of insulating films made of these materials, the insulating layer 40 21 may be formed.

[0184] Siloxane-based resin is a Si-OS compound formed using siloxane-based materials as starting materials. The siloxane resin corresponds to a resin containing an i bond. Alternatively, an organic group having a fluoro group may be used. That's fine.

[0185] The method for forming the insulating layer 4021 is not particularly limited, and may be a sputtering method, an SOG method, or the like, depending on the material. , spin coating, dip coating, spray coating, droplet ejection method (inkjet method, screen printing, offset printing, etc.), doctor knife, roll coater, curtain coater, knife The baking process of the insulating layer 4021 and the annealing of the semiconductor layer can be performed by using a baking machine. By using both, it becomes possible to manufacture a semiconductor device efficiently.

[0186] The pixel electrode 4030 and the counter electrode 4031 are made of indium oxide containing tungsten oxide, Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, Indium tin oxide containing titanium, indium tin oxide (ITO), indium zinc oxide and transparent conductive materials such as indium tin oxide doped with silicon oxide. can be used.

[0187] The pixel electrode 4030 and the counter electrode 4031 are made of a conductive polymer (also known as a conductive polymer). The conductive composition may be used to form the conductive layer. The pixel electrode has a sheet resistance of 10,000 Ω / □ or less and a light transmittance of 7.0 at a wavelength of 550 nm. It is preferable that the sheet resistance is 0% or more. It is preferable that the sheet resistance is lower. The resistivity of the conductive polymer contained in the composition is preferably 0.1 Ω·cm or less.

[0188] As the conductive polymer, a so-called π-electron conjugated conductive polymer can be used. For example, polyaniline or its derivatives, polypyrrole or its derivatives, polythiophene or or a derivative thereof, or a copolymer of two or more of these.

[0189] A signal line driver circuit 4003 and a scanning line driver circuit 4004 or a pixel section 4 Various signals and potentials applied to 002 are supplied from FPC4018.

[0190] The connection terminal electrode 4016 is made of the same conductive film as the pixel electrode 4030 of the liquid crystal element 4013. The wiring 4015 is connected to the source electrodes of the thin film transistors 4010 and 4011. The drain electrode layer is formed of the same conductive film as the drain electrode layer.

[0191] The connection terminal electrode 4016 is connected to the terminal of the FPC 4018 via the anisotropic conductive film 4019. are electrically connected.

[0192] In FIG. 17, a signal line driver circuit 4003 is formed separately and mounted on a first substrate 4001. The present invention is not limited to this configuration. Alternatively, only a part of the signal line driver circuit or a part of the scanning line driver circuit may be separately formed. It may be implemented.

[0193] FIG. 18 shows a semiconductor device using a TFT substrate 2600 fabricated by the fabrication method disclosed herein. 1 shows an example of a semiconductor device configured as a liquid crystal display module.

[0194] FIG. 18 shows an example of a liquid crystal display module, in which a TFT substrate 2600 and an opposing substrate 2601 are connected. The substrate is fixed by a bonding material 2602, and a pixel portion 2603 including a TFT and the like and a liquid crystal layer are disposed between the substrate and the bonding material 2602. A display element 2604 and a colored layer 2605 are provided to form a display area. is required for color display, and in the case of the RGB method, it corresponds to each color of red, green, and blue. A colored layer is provided corresponding to each pixel. On the outside, a polarizing plate 2606, a polarizing plate 2607, and a diffusion plate 2613 are arranged. It is composed of a cathode ray tube 2610 and a reflector 2611, and a circuit board 2612 is a flexible wiring board. The wiring board 2609 is connected to the wiring circuit section 2608 of the TFT substrate 2600, and the controller It also incorporates external circuits such as a polarizing plate and a power supply circuit. The layers may be laminated with a retardation film interposed therebetween.

[0195] The LCD module is available in TN (Twisted Nematic) mode, IPS (In-Plane Switching) mode, n-Plane-Switching mode, FFS (Fringe Field Switching) Switching mode, MVA (Multi-domain Vertical A alignment) mode, PVA(Patterned Vertical Alignment) mode nment) mode, ASM(Axially Symmetric aligned Micro-cell mode, OCB (Optically Compensated) Birefringence mode, FLC (Ferroelectric Liquid Crystal uid Crystal) mode, AFLC(AntiFerroelectric L You can use modes such as IQID Crystal.

[0196] By the above steps, a highly reliable liquid crystal display panel can be manufactured as a semiconductor device. do.

[0197] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0198] (Embodiment 3) An example of electronic paper will be shown as one mode of the semiconductor device.

[0199] Electronic paper that uses elements electrically connected to switching elements to drive electronic ink Electronic paper is also called an electrophoretic display. It is as easy to read as paper, consumes less power than other display devices, and is thin and light. This has the advantage that it is possible to

[0200] Electrophoretic displays can be of various forms, but the first particle has a positive charge. A microcapsule containing a negatively charged particle and a second particle is immersed in a solvent or solute. By applying an electric field to the microcapsules, The particles in the capsule are moved in opposite directions to each other, and only the color of the particles that have gathered on one side is displayed. The first particles or the second particles contain a dye, and in the absence of an electric field, The first particle and the second particle have different colors (colorless). (including

[0201] Thus, electrophoretic displays allow materials with high dielectric constants to migrate to areas of high electric field. This is a display that utilizes the so-called dielectrophoretic effect. No polarizers are required, which are necessary for liquid crystal displays.

[0202] The microcapsules dispersed in a solvent are called electronic ink. The electronic ink can be printed on surfaces such as glass, plastic, fabric, and paper. Color display is also possible by using color filters or particles containing pigments.

[0203] Furthermore, the microphone is appropriately placed on the active matrix substrate so as to be sandwiched between two electrodes. By arranging multiple microcapsules, an active matrix display device is completed. By applying an electric field to the cell, display can be performed. For example, in the thin film transistor of the first embodiment, An active matrix substrate obtained by a photodiode may be used.

[0204] The first particles and the second particles in the microcapsules may be made of a conductive material, an insulating material, Semiconductor materials, magnetic materials, liquid crystal materials, ferroelectric materials, electroluminescent materials, A material selected from magnetochromic materials, magnetophoretic materials, or a composite material thereof Just use it.

[0205] Figure 19 shows an active matrix electronic paper as an example of a semiconductor device. The thin film transistor 581 used in the device is the thin film transistor shown in Embodiment 1. The thin film transistor can be fabricated in the same manner as the conventional thin film transistor, and is highly reliable, including an oxide semiconductor layer.

[0206] The electronic paper in Figure 19 is an example of a display device that uses the twisting ball display method. The spherical display method is an electrode layer that uses spherical particles painted in black and white as display elements. and a potential difference is applied between the first electrode layer and the second electrode layer. This is a method of displaying by generating a magnetic field and controlling the orientation of spherical particles.

[0207] The thin film transistor 581 formed on the substrate 580 is a thin film transistor of a bottom gate structure. The insulating film 586 in contact with the oxide semiconductor layer and the insulating film 585 in contact with the insulating film 586 are The thin film transistor 581 is sealed between the substrate 580 and the substrate 596. The first electrode layer 587 is formed as a source electrode layer or a drain electrode layer, and the insulating film 585 is formed as a gate insulating film. The first electrode layer 587 and the substrate 596 are in contact with each other through an opening and are electrically connected. Between the second electrode layer 588 and the black area 590a and the white area 590b, A spherical particle 589 is provided, which includes a cavity 594 filled with a liquid, The particle 589 is filled with a filler 595 such as a resin (see FIG. 19). The insulating film 585 covering the transistor 581 may have a single-layer structure or a stacked-layer structure. The first electrode layer 587 corresponds to a pixel electrode, and the second electrode layer 588 corresponds to a common electrode. The electrode layer 588 is electrically connected to a common potential line provided on the same substrate as the thin film transistor 581. A common connection is used to electrically connect a conductive substrate disposed between substrate 580 and substrate 596. The second electrode layer 588 and a common potential line can be electrically connected via the particles.

[0208] In the thin film transistor 581 shown in FIG. 19, a gate electrode layer, a gate insulating layer, a semiconductor layer, The conductor layer, the source electrode layer, and the drain electrode layer have tapered edges. By tapering the edges of each layer, the coating of the layer formed on top of each layer can be improved. To improve the yield of semiconductor devices by improving the performance and preventing breakage. However, this embodiment is not limited to this configuration, and the gate electrode layer, the gate insulating layer, The edge of the semiconductor layer, or the source electrode layer or the drain electrode layer is not necessarily tapered. It is not necessary to have a tapered shape. Also, one or more layers may be tapered.

[0209] Also, instead of the element using the twist ball, an electrophoretic element can be used. A transparent liquid, positively charged white particles, and negatively charged black particles are enclosed in a 1 mm diameter container. Microcapsules with a size of about 0 μm to 200 μm are used. The microcapsules placed between the first and second electrode layers are subjected to an electric field. When the screen is turned on, the white particles and black particles move in opposite directions, resulting in a white or black display. The display element that applies this principle is an electrophoretic display element. The device is generally called electronic paper. Electrophoretic display elements are liquid crystal display elements. Because it has a higher reflectivity than the children, auxiliary lights are not required, and it consumes less power and is dim. The display can be recognized even in a location where power is not supplied to the display. Even if the display is broken, it is possible to maintain the image once it has been displayed. When a display device (also simply referred to as a display device or a semiconductor device equipped with a display device) is cut, Even if there is a problem, it is possible to save the displayed image.

[0210] Through the above steps, electronic paper with high reliability as a semiconductor device can be manufactured. .

[0211] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0212] (Fourth embodiment) In this embodiment mode, a light-emitting display device is shown as an example of a semiconductor device. Here, a light-emitting element that uses electroluminescence is used as the element. Light-emitting devices that utilize electroluminescence are either organic or inorganic compounds that emit light. Generally, the former is called an organic EL element and the latter is called an inorganic EL element. It's been discovered.

[0213] In an organic EL element, electrons and holes are released from a pair of electrodes by applying a voltage to the light-emitting element. are injected into the layers containing the light-emitting organic compounds, causing a current to flow. Light is emitted by the recombination of electrons and holes. Such a light-emitting element is called a current-excited light-emitting element.

[0214] Inorganic EL elements are divided into dispersion-type inorganic EL elements and thin-film-type inorganic EL elements depending on the element structure. Dispersion-type inorganic EL elements have a light-emitting layer in which particles of a light-emitting material are dispersed in a binder. The emission mechanism is a donor-acceptor interaction that utilizes the donor and acceptor levels. Thin-film inorganic EL devices sandwich the light-emitting layer between dielectric layers. Furthermore, this structure is sandwiched between electrodes, and the light emission mechanism utilizes the inner-shell electron transition of metal ions. In this example, the light-emitting element is an organic EL element. do.

[0215] The structure of the light emitting element will be described with reference to FIG. 20. Here, when the driving TFT is an n-type, The cross-sectional structure of a pixel will be described using the case of FIG. 20(A), FIG. 20(B), and FIG. 2 The TFTs 701, 711, and 721 used in the semiconductor device of 0(C) are The thin film transistor can be manufactured in a manner similar to that of the thin film transistor described in the embodiment mode.

[0216] In order to extract light, at least one of the anode and cathode of the light-emitting element is transparent. Here, "transparent" means that the transmittance is sufficiently high at least at the emission wavelength. As a light extraction method, a thin film transistor and a light emitting element are formed on a substrate, and the substrate and the light emitting element are The top-exiting type (top-exiting type) emits light from the opposite side, while the bottom-exiting type emits light from the substrate side. bottom emission type (bottom emission type) that extracts light from the substrate side and the opposite side There are also double-sided injection methods (double-sided ejection methods) that eject the material.

[0217] A top emission type light emitting element will be described with reference to FIG.

[0218] FIG. 20A shows a pixel in which light emitted from the light emitting element 702 exits to the anode 705 side. 7 shows a cross-sectional view of the driving TFT 701. A light-emitting element 702 is formed on a conductive layer 707, and a light-emitting layer 704 is formed on a cathode 703. The cathode 703 has a small work function and is light-reflecting. For example, a conductive film made of Ca, Al, Mg-Ag, Al-Li, etc. It is preferable to form the cathode 703 using a material. The light-emitting layer 704 is composed of a single layer. The film may be made up of a single layer or a plurality of layers stacked together. In this case, an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer are formed on the cathode 703 in this order. Of course, it is not necessary to provide all of these layers. It is formed using a transparent conductive material, for example, indium oxide containing tungsten oxide. Indium zinc oxide containing tungsten oxide, Indium oxide containing titanium oxide , indium tin oxide containing titanium oxide, indium tin oxide (ITO), indium zinc Conductive materials with transparency, such as lead oxide and indium tin oxide with silicon oxide added, are used. Just use it.

[0219] The structure in which the light-emitting layer 704 is sandwiched between the cathode 703 and the anode 705 is called a light-emitting element 702. In the case of the pixel shown in FIG. 20(A), light emitted from the light emitting element 702 is As shown in the figure, light is emitted toward the anode 705. The structure of the light emitting element 702 is a microcavity structure. This allows the extraction wavelength to be selected, improving color purity. In this case, the light emitting element 702 can be adjusted to the extracted wavelength. The thickness of each layer that constitutes the It is advisable to form an electrode.

[0220] An insulating layer containing silicon nitride, silicon oxide, or the like may be formed on the anode 705 . This makes it possible to suppress deterioration of the light emitting element.

[0221] Next, a bottom emission type light emitting element will be described with reference to FIG.

[0222] FIG. 20B shows a pixel in which light emitted from the light emitting element 712 exits to the cathode 713 side. 7 shows a cross-sectional view of a light-transmitting TFT 711 electrically connected to the driving TFT 712. A cathode 713 of the light-emitting element 712 is formed on the conductive layer 717. A light-emitting layer 714 and an anode 715 are laminated in this order. In this case, a light-shielding film 716 may be provided so as to cover the anode 715. As in the case of A), a conductive material with a small work function can be used. The thickness is set to a level that allows light to pass through (preferably, about 5 nm to 30 nm). For example, 20 nm An aluminum film having a thickness of about 700 nm can be used as the cathode 713. 14 is composed of a single layer, as in FIG. 20(A), but multiple layers can be stacked. The anode 715 does not need to transmit light, but may be configured as shown in FIG. The light-shielding film 716 may be formed using a light-transmitting conductive material. However, the light-shielding film 716 may be made of a metal or the like having a reflecting function. By providing the above, it is possible to improve the light extraction efficiency.

[0223] The structure in which the light-emitting layer 714 is sandwiched between the cathode 713 and the anode 715 is called a light-emitting element 712. In the case of the pixel shown in FIG. 20(B), light emitted from the light emitting element 712 is As shown in the figure, light is emitted toward the cathode 713. The structure of the light emitting element 712 is a microcavity structure. An insulating layer may be formed on the anode 715.

[0224] Next, a dual emission type light emitting element will be described with reference to FIG.

[0225] FIG. 20C shows a light-transmitting conductive layer 727 electrically connected to the driving TFT 721. A cathode 723 of the light-emitting element 722 is formed on the cathode 723, and a light-emitting layer 724 and an anode are formed on the cathode 723. The cathode 723 has a work function of 0.015 V, similar to that of FIG. A conductive material with a small resistance can be used. However, the thickness of the film must be such that it transmits light. For example, an aluminum film having a thickness of 20 nm can be used as the cathode 723. The light-emitting layer 724 may be made of a single layer, as in FIG. 20(A), or may be made of a laminate of multiple layers. The anode 725 may be configured to have a light-transmitting property, similar to that shown in FIG. The insulating film 11 can be formed using a conductive material.

[0226] The structure in which the cathode 723, the light-emitting layer 724, and the anode 725 are stacked is called a light-emitting element 722. In the case of the pixel shown in FIG. 20C, the light emitted from the light emitting element 722 is As shown by the arrows, light is emitted to both the anode 725 side and the cathode 723 side. The anode 725 may have a microcavity structure. is also good.

[0227] Although organic EL elements have been described as light-emitting elements here, inorganic EL elements can also be used as light-emitting elements. It is also possible to provide an L element. An example in which the transistor (TFT for driving the light-emitting element) and the light-emitting element are electrically connected has been shown. A current control TFT was connected between the light emitting element driving TFT and the light emitting element. That's fine.

[0228] Note that the semiconductor device described in this embodiment mode is not limited to the configuration shown in FIG. , various modifications are possible.

[0229] Next, the appearance and structure of a light-emitting display panel (also referred to as a light-emitting panel), which is one mode of a semiconductor device, will be described. The cross section will be described with reference to FIG. 21. FIG. 21 shows a cross section of a semiconductor device formed on a first substrate 4501. A thin film transistor 4509, a thin film transistor 4510, and a light-emitting element 4511 are 4506 and a panel sealed with a sealing material 4505. Here, FIG. 21(A) shows a plan view, and FIG. 21(B) shows the ST of FIG. 21(A). This corresponds to a cross-sectional view of the

[0230] A pixel portion 4502, a signal line driver circuit 4503a, and a signal line driver circuit 4504 are provided on a first substrate 4501. 3b, a seal is formed so as to surround the scanning line driving circuit 4504a and the scanning line driving circuit 4504b. A pixel portion 4502, a signal line driver circuit 4503a, a signal A scanning line driver circuit 4503b, a scanning line driver circuit 4504a, and a scanning line driver circuit 4504b are provided above the scanning line driver circuit 4503b. That is, the pixel portion 4502, the signal line driver circuit 4503, and the second substrate 4506 are provided. a, 4503b, the scanning line driver circuit 4504a, and the scanning line driver circuit 4504b are on the first substrate. The sealing material 4501, the sealing material 4505, and the second substrate 4506 together with the filler material 4507 form a sealed structure. In this way, a protective film (laminating film) with high airtightness and low outgassing is used. Packaging (enclosure) using a cover material, etc. It is preferable that

[0231] In addition, a pixel portion 4502, a signal line driver circuit 4503a, The signal line driver circuit 4503b, the scanning line driver circuit 4504a, and the scanning line driver circuit 4504b are In FIG. 21B, a thin film transistor included in the pixel portion 4502 is The transistor 4510 and the thin film transistor 450 included in the signal line driver circuit 4503a 9 is shown as an example.

[0232] The thin film transistors 4509 and 4510 are the same as those in Embodiments 1 to 3. In this embodiment, the thin film transistor The transistor 4509 and the thin film transistor 4510 are n-channel thin film transistors. .

[0233] Further, 4511 corresponds to a light-emitting element, and a first electrode which is a pixel electrode of the light-emitting element 4511 is The electrode layer 4517 is electrically connected to the source electrode layer or the drain electrode layer of the thin film transistor 4510. The light-emitting element 4511 is configured by a first electrode layer 4517, a second electrode layer 4518, and a The electrode 4512, the electroluminescent layer 4513, and the third electrode layer 4514 are laminated together. The configuration is not limited to the one shown in the figure. Therefore, the above configuration can be modified as appropriate.

[0234] The partition wall 4520 is formed using an organic resin film, an inorganic insulating film, organic polysiloxane, or the like. In particular, an opening is formed on the first electrode layer 4517 using a photosensitive material, and the opening It is preferable that the side wall of the portion be an inclined surface having a continuous curvature.

[0235] The electroluminescent layer 4513 may be composed of a single layer or a plurality of layers. It's okay to have it.

[0236] The third electrode layer 4 is formed to prevent oxygen, hydrogen, water, carbon dioxide, etc. from entering the light emitting element 4511. A protective film may be formed on the insulating film 514 and the partition wall 4520. The protective film may be a silicon nitride film, a nitride film, or the like. Silicon oxide films, DLC films, etc. can be formed.

[0237] In addition, a signal line driver circuit 4503a, a signal line driver circuit 4503b, a scanning line driver circuit 4504 a, the scanning line driver circuit 4504b, the pixel portion 4502, etc. are supplied with various signals. 518a, FPC4518b.

[0238] In this embodiment, the connection terminal electrode 4515 is connected to the first electrode layer 4517 of the light-emitting element 4511. The terminal electrode 4516 is formed from the same conductive film as the thin film transistor 4509 and the thin film transistor As an example, the source electrode layer and the drain electrode layer of the transistor 4510 are formed from the same conductive film. This is shown.

[0239] The connection terminal electrode 4515 is connected to the terminal of the FPC 4518a via the anisotropic conductive film 4519. are electrically connected to each other.

[0240] The substrate positioned in the direction of light extraction from the light emitting element 4511 has transparency to visible light. Substrates that are transparent to visible light include glass plates, plastic plates, and Examples include stick board, polyester film, and acrylic film.

[0241] Filler 4507 can be inert gases such as nitrogen and argon, as well as ultraviolet curing resins and Thermosetting resins can be used. For example, PVC (polyvinyl chloride), acrylic Polyimide, epoxy resin, silicone resin, PVB (polyvinyl butyral), E VA (ethylene vinyl acetate) or the like can be used. An example using nitrogen as the material is shown.

[0242] If necessary, a polarizing plate, a circular polarizing plate (including an elliptical polarizing plate), a retardation plate ( Optical films such as λ / 4 plates, λ / 2 plates, and color filters may be provided. For example, the surface may be roughened to diffuse reflected light and reduce glare. It is possible to apply an anti-glare treatment that can reduce glare.

[0243] A signal line driver circuit 4503a, a signal line driver circuit 4503b, a scanning line driver circuit 4504a, The scan line driver circuit 4504b is a single crystal semiconductor or polycrystalline semiconductor on a separately prepared substrate. Alternatively, only the signal line driver circuit, or a part thereof, or the driving circuit may be formed by the signal line driver circuit. Only the scan line driver circuit or only a part of it may be formed separately and mounted. is not limited to the configuration of FIG.

[0244] Through the above steps, a high-performance light-emitting display device (display panel) can be manufactured.

[0245] Next, a pixel configuration to which digital time gray scale driving can be applied and its operation will be described. 22 is a diagram showing an example of a pixel configuration to which digital time gray scale driving can be applied. n-channel semiconductor layer (In-Ga-Zn-O non-single crystal film) is used for the channel formation region. An example in which two panel-type thin film transistors are used in one pixel is shown.

[0246] In FIG. 22A, a pixel 6400 includes a switching thin film transistor 6401, a light emitting It has a thin film transistor 6402 for driving a light element, a light emitting element 6404 and a capacitor element 6403. The gate of the switching thin film transistor 6401 is connected to the scanning line 6406. The first electrode (one of the source electrode layer and the drain electrode layer) is connected to a signal line 6405. The second electrode (the other of the source electrode layer and the drain electrode layer) is a thin film transistor for driving a light emitting element. The light emitting element driving thin film transistor 6402 is connected to the gate of the gate The capacitor 6403 is connected to a power supply line 6407, and the first electrode is connected to the power supply line 6407. The second electrode is connected to the first electrode (pixel electrode) of the light emitting element 6404. The second electrode of the element 6404 corresponds to the common electrode 6408 .

[0247] The second electrode (common electrode 6408 side) and the first electrode (power line 6407 side) of the light emitting element 6404 The relationship between the potentials of the two electrodes (side) may be set so that either one has a higher potential. A potential difference between a high potential and a low potential is applied to the light emitting element 6404, and a current is generated by the application. In order to make the light element 6404 emit light, the potential difference between the high potential and the low potential is set to the threshold of the light emitting element 6404. The respective potentials may be set so as to be equal to or higher than the minimum voltage.

[0248] The capacitor element 6403 is substituted for the gate capacitance of the thin film transistor 6402 for driving the light emitting element. It is possible to omit the gate capacitance of the thin film transistor 6402 for driving the light emitting element. A capacitance may be formed between the channel region and the gate electrode layer.

[0249] Here, in the case of a voltage input voltage driving method, the thin film transistor 6402 for driving a light emitting element The gate of the light emitting element driving thin film transistor 6402 is turned on or off. In other words, the thin film transistor 6402 for driving the light emitting element is linear. Operate in the area.

[0250] Also, by changing the input signal, analog gray scale can be achieved using the same pixel configuration as in FIG. 22(A). For example, by converting a video signal into an analog signal, the light emitting element 6404 can be driven. The current corresponding to the video signal flows, and analog gradation driving is possible. It is preferable to use a signal that causes the element driving thin film transistor 6402 to operate in a saturation region. It's nice.

[0251] The potential of the power supply line 6407 may be changed in a pulsed manner. It is preferable to adopt a configuration such as 22(B).

[0252] In the configuration of FIG. 22A, the potential of the second electrode of the light-emitting element 6404 of a certain pixel is The potential of the second electrode of the other pixel is often the same as that of the common electrode 6408. It is also possible to pattern the electrodes for each pixel and connect them to the driving thin film transistors. stomach.

[0253] Note that one embodiment of the disclosed invention is not construed as being limited to the pixel configuration illustrated in FIG. 22, a switch, a resistor, a capacitor, a thin film transistor, a logic circuit, You can also add roads etc.

[0254] Note that this embodiment mode can be implemented in appropriate combination with other embodiment modes.

[0255] (Embodiment 5) The semiconductor device can be used as electronic paper. For example, electronic paper can be used in a variety of electronic devices. Sub-books (e-books), posters, in-car advertisements on trains and other vehicles, credit cards, etc. It can be applied to the display portion of various cards. An example of an electronic device is shown in Fig. 23. Shown in Figure 24.

[0256] FIG. 23(A) shows a poster 2631 made of electronic paper. When printed materials are used, the advertisements are replaced manually, but when electronic paper is used, The display of the advertisement can be changed in a short time. Also, the display is stable without any distortion. The poster may be configured to be capable of transmitting and receiving information wirelessly.

[0257] FIG. 23(B) shows an advertisement 2632 inside a vehicle such as a train. When using printed paper, advertisements are exchanged manually, but with electronic paper, This allows you to change the display of your advertisements in a short time without requiring a lot of manpower. The poster is designed to be able to send and receive information wirelessly. It may also be possible to use the following.

[0258] 24 also shows an electronic book 2700. For example, the electronic book 2700 has a housing 2 It consists of two housings, housing 2701 and housing 2703. 03 is integrated with a shaft portion 2711, and performs opening and closing operations around the shaft portion 2711. This configuration allows the device to operate like a paper book. .

[0259] A display unit 2705 is incorporated in the housing 2701, and a display unit 2707 is incorporated in the housing 2703. The display unit 2705 and the display unit 2707 are configured to display a continuous screen. Alternatively, a different screen may be displayed. For example, a sentence is displayed on the right display unit (display unit 2705 in FIG. 24) and An image can be displayed on the display unit 2707 in FIG.

[0260] 24 shows an example in which the housing 2701 is provided with an operation unit. 701 includes a power supply 2721, operation keys 2723, a speaker 2725, etc. The operation keys 2723 can be used to turn pages. It may also be configured to include a touch panel, a pointing device, etc. On the side, there are external connection terminals (earphone terminal, USB terminal, or AC adapter and USB A configuration including a terminal that can be connected to various cables, a recording medium insertion section, etc. Furthermore, the electronic book 2700 may be configured to have the function of an electronic dictionary. That's fine.

[0261] The electronic book 2700 may also be configured to be able to send and receive information wirelessly. The desired book data can be purchased and downloaded from the e-book server. is also possible.

[0262] This embodiment mode can be implemented in appropriate combination with other embodiment modes.

[0263] (Sixth embodiment) In this embodiment, a pixel configuration and pixel operation applicable to a liquid crystal display device will be described. In this embodiment, the liquid crystal element operates in a twisted twist (TN) mode. ed Nematic mode, IPS (In-Plane-Switching) mode Mode, FFS (Fringe Field Switching) mode, MVA (Multiple ti-domain Vertical Alignment) mode, PVA(Pat terned Vertical Alignment) mode, ASM (Axiall y Symmetric aligned Micro-cell) mode, OCB(O (Ptically Compensated Birefringence) mode, F LC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, etc. It can be used.

[0264] FIG. 25A is a diagram showing an example of a pixel configuration that can be applied to a liquid crystal display device. 0 includes a thin film transistor 5081, a liquid crystal element 5082, and a capacitor element 5083. The gate of the thin film transistor 5081 is electrically connected to a wiring 5085. A first terminal of the thin film transistor 5081 is electrically connected to a wiring 5084. The second terminal of 81 is electrically connected to the first terminal of the liquid crystal element 5082. The second terminal of the capacitor 5083 is electrically connected to the wiring 5087. The second terminal of the capacitor 5083 is electrically connected to the first terminal of the wiring 508. 6. The first terminal of the thin film transistor is the source or drain. The second terminal of the thin film transistor is either the source or the drain. In other words, if the first terminal of the thin film transistor is the source, The second terminal of a thin film transistor is the drain. Similarly, the first terminal of a thin film transistor is the drain. If so, the second terminal of the thin film transistor is the source.

[0265] The wiring 5084 can function as a signal line. The signal line is input from outside the pixel. The wiring 5085 is a wiring for transmitting the signal voltage to the pixel 5080. The scan line controls the on / off of the thin film transistor 5081. The wiring 5086 can function as a capacitance line. This is a wiring for applying a predetermined voltage to the second terminal of the element 5083. The capacitor 81 can function as a switch. The capacitor 5083 can function as a storage capacitor. The storage capacitor functions as a capacitor that holds the signal voltage even when the switch is off. The wiring 5087 is a capacitance element for continuously adding to the crystal element 5082. The counter electrode can be connected to the second terminal of the liquid crystal element 5082. This is the wiring for applying voltage. The functions that each wiring can have are as follows: For example, the voltage applied to the capacitance line can be changed. By doing so, it is possible to adjust the voltage applied to the liquid crystal element. Since 5081 only needs to function as a switch, the polarity of the thin film transistor 5081 is P-type. It may be either an N-channel type or an N-channel type.

[0266] FIG. 25(B) is a diagram showing an example of a pixel configuration that can be applied to a liquid crystal display device. 25(A) ) is different from the pixel configuration example shown in FIG. 25(A) in that the wiring 5087 is omitted. The second terminal of the liquid crystal element 5082 and the second terminal of the capacitor element 5083 are electrically connected. The pixel configuration is the same as that shown in FIG. 25(A), except that the pixel is connected to the The pixel configuration example shown in FIG. 25(B) is particularly suitable for liquid crystal elements in a lateral electric field mode (IP This is applicable when the liquid crystal element is horizontally shifted (including S mode and FFS mode). In the field mode, the second terminal of the liquid crystal element 5082 and the second terminal of the capacitor element 5083 are Since they can be formed on the same substrate, the second terminal of the liquid crystal element 5082 and the capacitor element 5 This is because it is easy to electrically connect the second terminal of the 083. By using the pixel configuration as shown, the wiring 5087 can be omitted, and the manufacturing process can be simplified. This allows the manufacturing cost to be reduced.

[0267] The pixel configuration shown in FIG. 25(A) or FIG. 25(B) is arranged in a matrix. In this way, a display section of a liquid crystal display device is formed, and various images can be displayed. FIG. 25(C) shows a pixel configuration in which a plurality of pixels shown in FIG. 25(A) are arranged in a matrix. 25C is a diagram showing a circuit configuration in the case where the display unit has The figure shows four pixels extracted from the multiple pixels. j is a natural number), the pixel located at the The wiring 5084_i, wiring 5085_j, and wiring 5086_j are electrically connected to Similarly, for the pixel 5080_i+1,j, a wiring 5084_i+1 and a wiring 5085_j and the wiring 5086_j are electrically connected. For +1, wire 5084_i, wire 5085_j+1, wire 5086_j+1 and Similarly, for pixel 5080_i+1,j+1, the wiring 5084_ i+1, a wiring 5085_j+1, and a wiring 5086_j+1. A wiring can be shared by multiple pixels belonging to the same column or row. In the pixel configuration shown in FIG. 25(C), the wiring 5087 is a counter electrode. Since the elements are common, the notation for wiring 5087 using natural numbers i or j is It is also possible to use the pixel configuration shown in FIG. Therefore, even if the wiring 5087 is shown in the configuration, the wiring 5087 is not essential, and other wiring It can be omitted by being shared with a line, etc.

[0268] The pixel configuration shown in FIG. 25(C) can be driven in various ways. The liquid crystal display is driven by a method called current driving, which prevents deterioration of the liquid crystal element (burn-in). FIG. 25(D) shows the state where dot inversion driving, which is one of AC driving, is performed. When the pixel configuration shown in FIG. 25(C) is used, the timing of the voltage applied to each wiring is 1 is a diagram showing a dot inversion driving method and a dot inversion driving method. This can suppress the flicker that is visible when the display is turned on.

[0269] In the pixel configuration shown in FIG. 25C, the pixel The switch in the jth gate selection period is in the selected state (on state) during one frame period. In the other periods, it is in the non-selected state (off state). After the j+1 gate selection period, the j+1 gate selection period is provided. In this way, sequential scanning is performed. As a result, all pixels are selected in sequence within one frame period. In the timing chart, when the voltage is in a high state (high level), The switch is in the selected state, and when the voltage is low (low level), it is in the unselected state. This is the case when the thin film transistor in each pixel is an N-channel type, and When a N-channel thin film transistor is used, the relationship between the voltage and the selected state is The opposite is true.

[0270] In the timing chart shown in FIG. 25(D), the jth pulse in the kth frame (k is a natural number) During the gate selection period, a positive signal voltage is applied to the wiring 5084_i used as a signal line. A negative signal voltage is applied to the wiring 5084_i+1. In the j+1-th gate selection period, a negative signal voltage is applied to the wiring 5084_i, and the wiring 5 A positive signal voltage is applied to 084_i+1. After that, each signal line As a result, in the kth frame, A positive signal voltage is applied to the pixel 5080_i,j, and a negative signal voltage is applied to the pixel 5080_i+1,j. A negative signal voltage is applied to the pixel 5080_i,j+1, and a positive signal voltage is applied to the pixel 5080_i+1,j+1. Then, in the k+1-th frame, the signal voltages are added as follows: In each pixel, a signal of the opposite polarity to the signal voltage written in the k-th frame is written. As a result, in the k+1th frame, the pixel 5080_i,j A negative signal voltage is applied to pixel 5080_i+1,j, a positive signal voltage is applied to pixel 5080_i,j A positive signal voltage is applied to pixel +1, and a negative signal voltage is applied to pixel 5080_i+1,j+1. In this way, adjacent pixels in the same frame have different polarities. A signal voltage of a certain value is applied to each pixel, and a signal voltage The dot inversion driving method is a driving method in which the polarity of the liquid crystal is inverted. This is visible when the entire or part of the displayed image is uniform while suppressing deterioration of the element. Flicker can be reduced. The voltage applied to all the wirings 5086 including the wirings 5086 can be a constant voltage. The signal voltage in the 5084 timing chart only shows the polarity. can take on various signal voltage values ​​in the polarity shown. The case where the polarity is inverted for each pixel has been described, but the present invention is not limited to this. For example, the polarity of the signal voltage written every two gate selection periods can be reversed. By reversing the polarity, it is possible to reduce the power consumption required to write the signal voltage. In addition, it is possible to invert the polarity for each column (source line inversion), or for each row The polarity can also be reversed (gate line inversion).

[0271] The second terminal of the capacitor 5083 in the pixel 5080 is connected to a capacitor in one frame period. A constant voltage is sufficient. The voltage applied is low for most of the frame period, and a nearly constant voltage is applied. Therefore, the second terminal of the capacitor element 5083 in the pixel 5080 is connected to the wiring 5 085. FIG. 25(E) is a diagram showing an example of a pixel configuration that can be applied to a liquid crystal display device. The pixel configuration shown in FIG. 25(E) has a wiring configuration different from that shown in FIG. 25(C). 5086 is omitted, and the second terminal of the capacitance element 5083 in the pixel 5080 and the The wiring 5085 in the row is electrically connected. In the range shown in FIG. 25(E), the pixel 5080_i,j+1 and the pixel The second terminal of the capacitance element 5083 in 5080_i+1,j+1 is connected to the wiring 5085_j. In this way, the second terminal of the capacitor element 5083 in the pixel 5080 and the By electrically connecting the wiring 5085 in the previous row, the wiring 5086 is omitted. Since the second terminal of the capacitor 5083 can be connected to the The destination may be the wiring 5085 in another row, not just the wiring 5085 in the previous row. The driving method of the pixel configuration shown in FIG. 25(E) is the same as that of the pixel configuration shown in FIG. 25(C). The same method of movement can be used.

[0272] The capacitor 5083 and the wiring electrically connected to the second terminal of the capacitor 5083 are By using this, it is possible to reduce the voltage applied to the wiring 5084 used as a signal line. The pixel configuration and driving method in this case will be explained using Figures 25(F) and 25(G). The pixel configuration shown in FIG. 25(F) has a wiring 5 as compared with the pixel configuration shown in FIG. 086 are provided as two per pixel column, and the second The feature of this method is that the electrical connection to the terminals is made alternately between adjacent pixels. The two wires 5086 are referred to as wire 5086-1 and wire 5086-2, respectively. Specifically, in the range shown in FIG. 25(F), pixel 5080_i , j, the second terminal of the capacitance element 5083 is electrically connected to the wiring 5086-1_j. The second terminal of the capacitor 5083 in the pixel 5080_i+1,j is connected to the wiring 5086-2 _j, and the second terminal of the capacitance element 5083 in the pixel 5080_i,j+1 The pixel is electrically connected to the wiring 5086-2_j+1 and is connected to the pixel 5080_i+1,j+1. A second terminal of the capacitor 5083 in the .

[0273] For example, as shown in FIG. 25(G), in the k-th frame, pixel 5080_i, When a signal voltage of positive polarity is written to j, the wiring 5086-1_j is connected to the j-th gate selection period, and changes to high level after the jth gate selection period ends. Then, it maintains a high level for one frame period, and After a signal voltage of negative polarity is written during the j-th gate selection period, the signal voltage is changed to a low level. In this way, after a signal voltage of positive polarity is written to the pixel, the second By changing the voltage of the wiring electrically connected to the terminal in the positive direction, the voltage applied to the liquid crystal element The voltage written to the pixel can be changed by a predetermined amount in the positive direction. The power consumption required for signal writing can be reduced because the signal voltage can be reduced. In addition, when a signal voltage of negative polarity is written in the j-th gate selection period, After a signal voltage of negative polarity is written to the pixel, the second terminal of the capacitor 5083 is electrically connected to the By changing the voltage of the wiring connected to the liquid crystal element in the negative direction, the voltage applied to the liquid crystal element The negative polarity can be changed by a predetermined amount, so that the pixel That is, the signal voltage to be written can be reduced. The electrically connected wiring is connected to the same row of the same frame when a positive polarity signal voltage is applied. The pixels to which a negative signal voltage is applied have different wiring. FIG. 25(F) shows a case where a signal voltage of positive polarity is written in the k-th frame. A wiring 5086-1 is electrically connected to the pixel, and a signal voltage of negative polarity is applied in the k-th frame. In this example, the wiring 5086-2 is electrically connected to the pixel to which the voltage is written. This is just an example. For example, a pixel to which a signal voltage of a positive polarity is written and a pixel to which a signal voltage of a negative polarity is written may be In the case of a driving method in which pixels to which light is written appear every two pixels, the wiring 5086-1 and The electrical connection of the wiring 5086-2 is also performed alternately every two pixels. Furthermore, when signal voltages of the same polarity are written to all pixels in one row (gate line), In the case of the pixel inversion, one wiring 5086 is sufficient for one row. In the configuration, as explained with reference to Figs. 25(F) and 25(G), A driving method that reduces the input signal voltage can be used.

[0274] Next, the liquid crystal element is a vertical alignment (VA) liquid crystal display, typically an MVA mode or a PVA mode. This section describes a pixel configuration and driving method that are particularly preferable for the VA mode. The LCD panel has many advantages, such as no rubbing process required during manufacturing, minimal light leakage during black display, and low driving voltage. However, the image quality deteriorates when the screen is viewed from an angle (narrow viewing angle). In order to widen the viewing angle in the VA mode, the following problems are encountered: As shown in (B), a pixel configuration having multiple sub-pixels in one pixel is used. In the pixel configuration shown in FIG. 26(A) and FIG. 26(B), the pixel 5080 is 5 shows an example of a case where two sub-pixels (sub-pixel 5080-1 and sub-pixel 5080-2) are included. The number of sub-pixels in one pixel is not limited to two, and various numbers of sub-pixels can be used. The larger the number of sub-pixels, the wider the viewing angle can be. The sub-pixels can have the same circuit configuration as each other. In this case, all the sub-pixels are the same as those shown in FIG. The circuit configuration of the first subpixel 5080-1 is the same as that shown in A). It has a thin film transistor 5081-1, a liquid crystal element 5082-1, and a capacitor element 5083-1. The connections between the various components are in accordance with the circuit configuration shown in FIG. The second subpixel 5080-2 includes a thin film transistor 5081-2 and a liquid crystal element 5082- 2, a capacitor element 5083-2 is included, and the connection relationship between them is shown in FIG. It shall conform to the circuit configuration.

[0275] The pixel configuration shown in FIG. 26(A) uses a scanning line for two sub-pixels that make up one pixel. There are two wires 5085 (wire 5085-1 and wire 5085-2) that are used as signal lines. 5084 is used as a capacitor line, and one wiring 5086 is used as a capacitor line. In this way, by sharing the signal line and the capacitance line between two sub-pixels, The throughput can be improved and the signal line driver circuit can be simplified. This reduces manufacturing costs and the number of connections between the LCD panel and the driver circuit IC. The pixel configuration shown in FIG. 26(B) is a pixel configuration in which two sub-pixels make up one pixel. For each pixel, there is one wiring 5085 used as a scanning line, and one wiring 50 The wiring 5084 has two wirings 5084 (wiring 5084-1 and wiring 5084-2) and is used as a capacitance line. In this way, the scanning lines and the capacitance lines are connected to two sub-pixels. By sharing the same element, the aperture ratio can be improved, and the total number of scanning lines can be reduced. This allows for a sufficient gate line selection period even in high-resolution LCD panels. This allows the appropriate signal voltage to be written to each pixel.

[0276] 26(C) and 26(D) show the pixel configuration shown in FIG. 26(B) in which the liquid crystal element is This is an example in which the electrical connection state of each element is represented in a schematic manner by replacing it with the shape of a pixel electrode. In FIG. 26(C) and FIG. 26(D), the electrode 5088-1 represents the first pixel electrode, The electrode 5088-2 represents the second pixel electrode. The electrode 5088-1 corresponds to the first terminal of the liquid crystal element 5082-1 ​​in FIG. 26(B). The second pixel electrode 5088-2 is connected to the first terminal of the liquid crystal element 5082-2 in FIG. 26(B). That is, the first pixel electrode 5088-1 corresponds to the thin film transistor 5081-1. The second pixel electrode 5088-2 is electrically connected to either the source or drain of the thin film transistor. The transistor 5081-2 is electrically connected to either the source or the drain of the transistor 5081-2. In 6(D), the connection relationship between the pixel electrode and the thin film transistor is reversed. The pixel electrode 5088-1 is one of the source and drain electrodes of the thin film transistor 5081-2. The second pixel electrode 5088-2 is electrically connected to the thin film transistor 5081-1. It is assumed that the electrode is electrically connected to either the source or the drain.

[0277] The pixel configurations shown in FIG. 26(C) and FIG. 26(D) are arranged alternately in a matrix. By doing so, a special effect can be obtained. An example is shown in Figure 26(E) and Figure 26(F). The pixel configuration shown in Figure 26(E) is The part corresponding to pixel 5080_i,j and pixel 5080_i+1,j+1 is shown in FIG. 26(C). The configuration shown in FIG. 1 is a block diagram of a pixel 5080_i+1,j and a pixel 5080_i,j+1. In this configuration, the part shown in FIG. 26(F) When driven as shown in the timing chart, during the jth gate selection period of the kth frame, The first pixel electrode of the pixel 5080_i,j and the second pixel electrode of the pixel 5080_i+1,j A signal voltage of positive polarity is written, and the second pixel electrode of the pixel 5080_i,j and the pixel 50 A signal voltage of negative polarity is written to the first pixel electrode of 80_i+1,j. In the j+1-th gate selection period of the frame, the second pixel electrode and and a signal voltage of positive polarity is written to the first pixel electrode of the pixel 5080_i+1,j+1, The first pixel electrode of the pixel 5080_i,j+1 and the second pixel electrode of the pixel 5080_i+1,j+1 In the (k+1)th frame, a signal voltage of negative polarity is written to each pixel. By doing so, the polarity of the signal voltage is inverted in the pixel configuration including the sub-pixel. This realizes a drive equivalent to dot inversion drive, while changing the polarity of the voltage applied to the signal line by one frame. Since the same voltage can be used within a period, the power consumption required for writing the signal voltage to the pixel can be reduced. The force can be significantly reduced. The voltage applied to all the wirings 5086 including the wiring 5086 can be a constant voltage.

[0278] Furthermore, by using the pixel configuration and driving method shown in FIG. 26(G) and FIG. 26(H), The magnitude of the signal voltage written to the pixel can be reduced. The capacitance lines electrically connected to the plurality of sub-pixels of the pixel are different for each sub-pixel. That is, the pixel configuration and driving method shown in FIG. 26(G) and FIG. 26(H) Therefore, for sub-pixels to which the same polarity is written in the same frame, the capacitances in the same row are For sub-pixels that share a common line and have different polarities written in the same frame, Then, when writing to each row is completed, The voltage of the positive polarity signal voltage is written to the sub-pixel in the positive direction, and the voltage of the negative polarity signal voltage is written to the By changing the signal voltage written to the pixel in the negative direction, Specifically, the wiring 5086 used as the capacitance line is There are two lines (wiring 5086-1 and wiring 5086-2), and the first pixel of pixel 5080_i,j The electrode and the wiring 5086-1_j are electrically connected via a capacitor, and the pixel 5080 The second pixel electrode of pixel _i,j is electrically connected to the wiring 5086-2_j via a capacitance element. The first pixel electrode of the pixel 5080_i+1,j and the wiring 5086-2_j form a capacitance element. The second pixel electrode of the pixel 5080_i+1,j is electrically connected to the wiring 508 6-1_j is electrically connected to the first pixel 5080_i,j+1 through a capacitance element. The pixel electrode and the wiring 5086-2_j+1 are electrically connected via a capacitance element, and the pixel The second pixel electrode 5080_i,j+1 and the wiring 5086-1_j+1 are connected via a capacitance element. The first pixel electrode of the pixel 5080_i+1,j+1 and the wiring 5086 are electrically connected to each other. -1_j+1 are electrically connected to the pixel 5080_i+1,j+1 via a capacitance element. The second pixel electrode and the wiring 5086-2_j+1 are electrically connected via a capacitor element. However, this is just an example. For example, if a pixel is written with a positive signal voltage and a pixel is written with a negative signal voltage, In the case of a driving method in which a pixel to which a signal voltage of the polarity is written appears every two pixels, wiring 5 The electrical connections of 086-1 and wiring 5086-2 are also made alternately every two pixels. Furthermore, it is preferable that signal voltages of the same polarity are written to all pixels in one row. In this case (gate line inversion), one wiring 5086 is sufficient per row. In the pixel configuration shown in FIG. 26(E), as explained with reference to FIG. 26(G) and FIG. 26(H), In addition, a driving method can be used that reduces the signal voltage written to the pixel.

[0279] (Embodiment 7) Next, another example of the configuration of the display device and a method of driving the same will be described. In this case, a display device using a display element with a slow response time (long response time) in brightness to signal writing is used. In this embodiment, a liquid crystal display (LCD) is used as a display element with a long response time. However, the display element in this embodiment is not limited to this, and may be any suitable element. Various display elements can be used that have a slow response of brightness to interference.

[0280] In the case of a general liquid crystal display device, the response of brightness to signal writing is slow, and the signal current is not applied to the liquid crystal element. Even if pressure is applied continuously, it may take more than one frame period for the response to complete. Even if a moving image is displayed on such a display device, it is not possible to faithfully reproduce the moving image. Furthermore, in the case of active matrix driving, the time required to write a signal to one liquid crystal element is Usually, the signal writing period (one frame period or one sub-frame period) is divided by the number of scanning lines. The time it takes to select a scan line is only a short time (one scan line selection period), and the liquid crystal element cannot respond within this short time. Therefore, most of the response of the liquid crystal element occurs during the period when no signal is written. Here, the dielectric constant of the liquid crystal element changes according to the transmittance of the liquid crystal element. However, the fact that the liquid crystal element responds during the period when no signal is written means that the liquid crystal element The dielectric constant of the liquid crystal element changes when there is no charge exchange with the outside (constant charge state). In other words, in the equation (charge) = (capacity) · (voltage), when the charge is constant, The capacitance changes depending on the voltage applied to the liquid crystal element. Therefore, the voltage at the time of signal writing changes. When a liquid crystal element with slow brightness response is driven by an active matrix, In principle, the voltage cannot reach the voltage at the time of signal writing.

[0281] The display device of this embodiment is configured to make the display element respond to a desired luminance within a signal writing period. In order to achieve this, the signal level at the time of signal writing is corrected in advance (correction signal). Furthermore, the response time of the liquid crystal element is increased as the signal level increases. The larger the value, the shorter the response time of the liquid crystal element. This type of driving method that adds a correction signal is also called overdrive. In the overdrive of this embodiment, the signal writing period is input to the display device. The period of the input image signal (input image signal period T in ), even if the signal writing period is shorter than By correcting the signal level according to the period, the display element can be displayed at the desired brightness within the signal writing period. The signal writing period is equal to the input image signal period T in In cases where For example, the case where one original image is divided into multiple sub-images and the multiple sub-images are combined into one frame is called the case where one original image is divided into multiple sub-images and the multiple sub-images are combined into one frame. For example, the images may be displayed sequentially within a certain period.

[0282] Next, a method for correcting a signal level when writing a signal in an active matrix drive display device is described. An example of the method will be described with reference to Figures 27(A) and (B). The horizontal axis represents time and the vertical axis represents the signal level at the time of signal writing. 27(B) is a graph showing a time change in the signal level when the signal is being input. The vertical axis is the time and the vertical axis is the display level, and the change in the display level of one display element over time is shown in the diagram. In addition, when the display element is a liquid crystal element, the signal level at the time of signal writing is The voltage can be used as the voltage and the display level as the transmittance of the liquid crystal element. ) is the voltage, and the vertical axis of FIG. 27(B) is the transmittance. Overdrive in this state is when the signal level is something other than voltage (duty ratio, current, etc.). Incidentally, the overdrive in this embodiment includes a case where the display level is higher than the transmittance. This also includes cases where the voltage is outside the range (brightness, current, etc.). Normally black type (e.g. VA mode, IPS mode, etc.) and when the voltage is 0 There are also normally white types (e.g. TN mode, OCB mode, etc.) that display white in the display area. The graph shown in 27(B) corresponds to both types, and in the case of the normally black type, the graph The transmittance increases as you move up the graph, and in the case of a normally white type, That is, the liquid crystal display device of this embodiment has a liquid crystal display panel with a larger transmittance. The display may be of a normally black type or a normally white type. The timing of signal writing is indicated by dotted lines on the axis, and the timing of the next signal writing is indicated by dotted lines. The period until writing is performed is called the retention period F iIn this embodiment, , i is an integer and is an index representing each retention period. In (B), i is shown as 0 to 2, but other integers are also acceptable. (Values ​​other than 0 to 2 are not shown). i In this case, the image signal The transmittance that realizes the brightness corresponding to the signal is T i In the steady state, the transmittance T i Give electricity Pressure V i The broken line 5101 in FIG. 27(A) indicates that no overdrive is performed. The solid line 5102 represents the change over time of the voltage applied to the liquid crystal element in this embodiment. This shows the time change of the voltage applied to the liquid crystal element when overdriving. The dashed line 5103 in FIG. 27(B) represents the transmittance of the liquid crystal element when no overdrive is performed. The solid line 5104 represents the change over time when overdrive is performed in this embodiment. The graph shows the time change in the transmittance of the liquid crystal element. i At the end of Transmittance T i The difference between the actual transmittance and the measured transmittance is called the error α i It will be written as follows.

[0283] In the graph shown in FIG. 27(A), the dashed line 5101 and the solid line 510 2, the desired voltage V0 is applied, and in the graph shown in FIG. 27(B), the dashed line It is assumed that the desired transmittance T0 is obtained for both 5103 and solid line 5104. If no overdrive is performed, as shown by the dashed line 5101, The desired voltage V1 is applied to the liquid crystal element, but as already mentioned, during the period when the signal is written is extremely short compared to the retention period, and most of the retention period is in a constant charge state, During the hold period, the voltage applied to the liquid crystal element changes along with the change in transmittance. At the end of F1, the voltage becomes significantly different from the desired voltage V1. The dashed line 5103 in the graph shown in FIG. 27(B) also differs greatly from the desired transmittance T1. As a result, it is not possible to display the image faithfully to the image signal, and the image quality deteriorates. On the other hand, when the overdrive of this embodiment is performed, the solid line 510 As shown in FIG. 2, at the beginning of the hold period F1, a voltage V1' that is larger than the desired voltage V1 is applied. In other words, the voltage is gradually applied to the liquid crystal element during the hold period F1. In anticipation of this change in voltage, the voltage applied to the liquid crystal element at the end of the hold period F1 is At the beginning of the hold period F1, the desired voltage V1 is set to a value close to the desired voltage V1. By applying the corrected voltage V1' to the liquid crystal element, the desired voltage V1 can be accurately applied to the liquid crystal element. In this case, the solid line 5104 in the graph shown in FIG. As shown in Fig. 1, the desired transmittance T1 is obtained at the end of the holding period F1. Although the charge state is constant for most of the duration, Next, during the hold period F2, the desired voltage V2 is set higher than V1. In this case, as in the case of the retention period F1, At the end of the hold period F2, the voltage applied to the liquid crystal element is gradually changed. At the beginning of the hold period F2, the voltage applied to the liquid crystal element is set to a voltage close to the desired voltage V2. In this case, a voltage V2' corrected from the desired voltage V2 is applied to the liquid crystal element. As shown by the solid line 5104 in the graph of FIG. 27(B), at the end of the holding period F2, The desired transmittance T2 is obtained at the end of the hold period F1. i V i-1 If it is larger than the corrected voltage V i ´ is the desired voltage V i It will be bigger than Furthermore, it is preferable to correct the hold period F2 as follows: i V i-1 Compared to If the voltage is smaller than the corrected voltage V i ´ is the desired voltage V i Compensated to be smaller than It is preferable that the specific correction value is determined by calculating the response characteristics of the liquid crystal element in advance. It can be derived by measuring the and incorporate the correction values ​​into the logic circuit. , a method of reading out correction values ​​as needed, etc. can be used.

[0284] When the overdrive in this embodiment is actually realized as a device, There are various constraints. For example, voltage correction must be performed within the rated voltage range of the source driver. That is, the desired voltage must be large enough to be an ideal correction voltage. If the voltage exceeds the rated voltage of the source driver, the voltage cannot be fully corrected. The problems that arise in such cases will be explained with reference to Figures 27(C) and (D). C) is the same as in Figure 27(A), with the horizontal axis being time and the vertical axis being voltage, and 27(D) is a graph showing the time change of the voltage in the As in FIG. 27(B), the horizontal axis is time and the vertical axis is transmittance. This is a graph in which the time change in transmittance is schematically shown as a solid line 5106. The notation method is the same as in Figures 27(A) and (B), so the explanation will be omitted. (C) and (D) are correction voltages for achieving a desired transmittance T1 during the hold period F1. Since the voltage V1' exceeds the rated voltage of the source driver, V1' must be set to V1. This indicates that the correction is insufficient. The transmittance obtained will be a value that differs from the desired transmittance T1 by an error α1. The error α1 is large only when the desired voltage is originally large. However, the image quality degradation caused by the error α1 is often within the acceptable range. As the voltage becomes larger, the error in the voltage correction algorithm also becomes larger. In the voltage correction algorithm, it is assumed that the desired transmittance is obtained at the end of the hold period. When the error α1 is set, the error α1 is actually large, but the error α1 is small. Since the voltage is corrected as As a result, the error α2 also becomes larger. Furthermore, if the error α2 becomes larger, The next error, α3, becomes even larger, and so on, until the error gets larger. As a result, the image quality is significantly degraded. In order to prevent the error from becoming too large, the holding period F i to The correction voltage V i When ´ exceeds the rated voltage of the source driver, the hold period F i At the end of Error α ini and estimate the error α i Considering the magnitude of the holding period F i+1 in The correction voltage can be adjusted. This reduces the error α i Even if it becomes large, Difference α i+1 This minimizes the impact on the In the overdrive of this embodiment, the error α2 can be minimized. An example of this will be described with reference to Figures 27(E) and (F). The correction voltage V2' in the graph shown in FIG. 27(C) is further adjusted to V2'. The change in voltage over time when this is the case is shown as a solid line 5107. The graph in Figure 27(E) shows the time variation of the transmittance when the voltage is corrected. The solid line 5106 in the graph shown in FIG. 27(D) represents the correction voltage V2' Although overcorrection (correction in a situation where the error is large) occurs due to The solid line 5108 in the graph shown in Fig. 1 is the correction voltage V2' adjusted taking into account the error α1. ´ suppresses overcorrection and minimizes the error α2. The response characteristics of the liquid crystal element can be measured in advance. There are two methods for this: formulating a correction formula and incorporating it into the logic circuit, and using a lookup table to calculate the correction value. The correction values ​​can be stored in memory as a cable and read out as needed. These methods can be used to calculate the correction voltage V i Add it separately from the part that calculates ´ , or the correction voltage V i It can be incorporated into the part that calculates the error α i―1 of The correction voltage V is adjusted to take into accounti The correction amount (desired voltage V i The difference between i Complement of ´ It is preferable that the value be smaller than the positive value. i ´´-V i |<|V i ´- V i It is preferable to use |.

[0285] Note that the error α i The shorter the signal writing period, the larger the The response time of the element must also be short, which results in a larger compensation voltage being required. Furthermore, the required correction voltage is increased, resulting in the correction voltage being The frequency of exceeding the rated voltage of i The frequency of occurrence is also high. Therefore, the overdrive in this embodiment is effective when the signal writing period is short. Specifically, it is possible to divide an original image into multiple sub-images and When the plurality of sub-images are displayed sequentially within one frame period, the image included in the plurality of images is A motion occurring in the image is detected, an intermediate image of the plurality of images is generated, and an intermediate image of the plurality of images is generated. When inserting and driving (so-called motion compensated double speed driving), or when combining these When the driving method such as the above is performed, the overdrive of this embodiment is used. This will have a significant effect.

[0286] In addition to the upper limit, the rated voltage of the source driver also has a lower limit. In this case, the voltage applied cannot be smaller than 0. Similarly, an ideal correction voltage cannot be applied, so the error α i It's getting bigger However, in this case, as in the above-mentioned method, the holding period F i At the end of The error α i and estimate the error α i Considering the magnitude of the holding period F i+1 Correction in The voltage can be adjusted. Note that the rated voltage of the source driver is set to a value less than 0. If a large voltage (negative voltage) can be applied, a negative voltage can be applied to the liquid crystal element as a correction voltage. In this way, the holding period F i At the end of the i It can be adjusted to a voltage close to do.

[0287] To prevent deterioration of the liquid crystal element, the polarity of the voltage applied to the liquid crystal element is periodically reversed. In other words, so-called inversion driving can be performed in combination with overdriving. That is, the overdrive in this embodiment includes the case where it is performed simultaneously with the inversion drive. For example, if the signal writing period is equal to the input image signal period T in If the polarity is 1 / 2 of and the input image signal period T in If the polarity of the signal is about the same as that of the signal written in the positive polarity, In this way, the polarity of the signal is reversed. By making the period of charge and discharge longer than the signal writing period, the frequency of pixel charging and discharging can be reduced. Power consumption can be reduced. However, if the polarity reversal period is too long, the difference in polarity The difference in brightness caused by the polarity of the The period is the input image signal period T in It is preferable that the length is equal to or shorter than the length.

[0288] (Embodiment 8) Next, another example of the configuration of the display device and a method of driving the same will be described. In this case, an image that interpolates the movement of an image (input image) input from outside the display device is generated by multiple The image is generated inside the display device based on the input image, and the generated image (generated image) and the input The generated image is displayed by compensating for the movement of the input image. By creating an image that looks like it's moving between the two, you can make the movement of the video smoother, and This can improve the problem of video quality being reduced by afterimages caused by video drive. The display of moving images ideally involves changing the brightness of each pixel in real time. This is achieved by controlling the pixels in real time, but the real-time individual control of the pixels is The problem of the huge number of paths, the problem of wiring space, and the huge amount of input image data Therefore, it is difficult to realize the display of moving images on a display device. The display is made to look like a moving image by displaying multiple still images in sequence at a regular interval. This period (called the input image signal period in this embodiment, T in and For example, the NTSC standard is 1 / 60 seconds, and the PAL standard is 1 Even with this period, the CRT, which is an impulse type display device, shows no movement. However, there were no problems with the image display. If a video conforming to this standard is displayed as is, it may be displayed incorrectly due to afterimages caused by the fact that it is a hold type. This causes a problem called hold blur. Blurred images are caused by the inconsistency between the human eye's unconscious movement interpolation and the hold-type display. Since it is recognized by discrepancy, it is easier to recognize input image signals than conventional standards. This can be reduced by shortening the signal cycle (approaching real-time individual control of pixels). However, shortening the input image signal cycle will require changes to the standard and will also increase the amount of data. However, it is difficult to do this based on a standardized input image signal. An image that interpolates the movement of the input image is generated inside the display device, and the generated image By interpolating the input image and displaying it, it is possible to hold the image without changing the standard or increasing the amount of data. In this way, the image signal is generated inside the display device based on the input image signal. The process of interpolating the motion of the input image is called video interpolation.

[0289] The moving image interpolation method according to this embodiment can reduce the blurring of the moving image. The moving image interpolation method in the embodiment can be divided into an image generation method and an image display method. And, for specific patterns of movement, different image generation methods and / or image display methods are used. By using this method, motion blur can be effectively reduced. FIG. 10B is a schematic diagram illustrating an example of a moving image interpolation method according to the present embodiment. In Figures 28(A) and (B), the horizontal axis represents time, and the horizontal position represents The part marked "Input" indicates the timing at which each image is handled. Here, the two images that are adjacent in time are The focus is on the image 5121 and the image 5122. The input image has a period T in Enter at intervals of In addition, the period T in The length of one frame is referred to as one frame period. The part marked "Generation" indicates the timing at which a new image is generated from the input image signal. Here, the generated image is based on the image 5121 and the image 5122. The part marked "display" indicates that the image is displayed on the display device. This shows the timing when the image is displayed. Although it is only indicated by a dashed line, by treating it in the same way as the image of interest, This is an example of a method for interpolating moving images in this form.

[0290] An example of a moving image interpolation method in this embodiment is shown in FIG. 28(A). The generated image is generated based on two adjacent input images. By displaying the video in the gap between the two, it is possible to interpolate the video. It is preferable that the display period of the display image is half the input period of the input image. The display period is not limited to this, and various display periods can be used. For example, the display period is set to the input period. By making it shorter than 1 / 2, you can display the video more smoothly. By making the period longer than half, power consumption can be reduced. The image is generated based on two input images, but the input images are limited to two. For example, three (or more than three) time-adjacent If an image is generated based on the input image (i.e., the image is generated more accurately than if it is generated based on two input images), It is to be noted that the display timing of the image 5121 is set to the same as that of the image 5 The same time as the input timing of 122, that is, the display timing for the input timing is 1 Although it is a frame delay, the display timing in the video interpolation method of this embodiment is The timing is not limited to this, and various display timings can be used. For example, This allows you to delay the display timing for the , the display timing of the generated image 5123 can be delayed, so that the image 51 This allows for more time for the generation of 23, reducing power consumption and manufacturing costs. If the display timing is too slow relative to the input timing, The image will be stored for a longer period of time, and the memory capacity required for storage will increase. The display timing relative to the input timing is preferably delayed by about one to two frames. It's nice.

[0291] Here, the specific image 5123 generated based on the image 5121 and the image 5122 is In order to interpolate the moving image, the motion of the input image is detected. In this embodiment, a block map is used to detect the motion of the input image. However, there are various methods that can be used without being limited to this. (Methods such as taking the difference between image data and using Fourier transform) can be used. In the block matching method, first, the image data of one input image (here, the image 5121) into a data storage means (semiconductor memory, RAM, or other storage circuit, etc.) Then, the image in the next frame (image 5122 in this example) is stored in memory. The divided areas are rectangular with the same shape, as shown in Figure 28(A). It can be, but is not limited to, various things (shape or size depending on the image) Then, for each divided area, the data stored in the data storage means can be The data is compared with the image data of the previous frame (here, the image data of image 5121). In the example of FIG. 28(A), the image 5122 has a similar image data. A region similar in data to the region 5124 in the image 5121 is searched for, and the region 512 6 is searched. When searching within image 5121, the search range is limited. In the example of FIG. 28(A), the search range is preferably set to area 5124. The area 5125 is set to be about four times the area of ​​the By increasing the size, it is possible to improve the detection accuracy even in fast-moving videos. However, if the search is too broad, the search time will be enormous, and the detection of movement will be difficult. Therefore, the area of ​​the region 5125 is set to be about two to six times the area of ​​the region 5124. Then, the searched region 5126 and the region in the image 5122 are compared. The difference in position between the area 5124 and the area 5125 is calculated as a motion vector 5127. 7 represents the movement of image data in the region 5124 during one frame period. To generate an image that represents the intermediate state of motion, the direction of the motion vector is kept the same but the size is changed. A modified image generation vector 5128 is created, and the vector 5128 is included in the region 5126 in the image 5121. The image data is moved according to the image generation vector 5128 to generate the image 5123. This series of processes is called image 512 By performing this for all areas in 2, image 5123 can be generated. Then, the video is interpolated by sequentially displaying images 5121, 5123, and 5122. It should be noted that the object 5130 in the image can be seen in the image 5121 and the image 5122. The generated image 5123 is the same as the image 51. 21 and the midpoint of the object in image 5122. This makes the movement of the video smoother and improves blurring of the video caused by afterimages, etc. do.

[0292] The size of the image generation vector 5128 is determined according to the display timing of the image 5123. In the example of FIG. 28(A), the display timing of the image 5123 can be determined. is set to the midpoint (1 / 2) of the display timing of image 5121 and image 5122. The size of the image generation vector 5128 is half that of the motion vector 5127. For example, if the display timing is 1 / 3, the size is set to 1 / 3 and the display time is set to If the timing is 2 / 3, the size can be set to 2 / 3.

[0293] In this way, multiple regions with various motion vectors can be moved to create a new image. When creating an image, it is necessary to consider whether there are overlapping areas within the destination area where other areas have already been moved, or whether there are any overlapping areas within the destination area. There may be some blank areas that are not moved from the area. As a method for correcting the overlapping portion, for example, the overlapping data can be corrected by Priority is assigned based on the average method, the direction of the motion vector, etc., and high-priority data is generated. The method of using the data in the generated image, color (or brightness) is given priority, but brightness (or For example, the average of the number of pixels (or color) can be used. The image data at the corresponding position of the image 5121 or 5122 is directly used as the data in the generated image. The method of taking the average of the image data at the position of the image 5121 or the image 5122 Then, the generated image 5123 can be used as an image generation method. By displaying the timing according to the size of the vector 5128, the movement of the video becomes smoother. Furthermore, the problem of image retention caused by hold drive can be eliminated. You can improve the problem.

[0294] Another example of the moving image interpolation method in this embodiment is a time interpolation method as shown in FIG. A generated image generated based on two input images that are adjacent to each other is generated based on the two input images. When displaying the images in the gaps between the displayed images, each image is further divided into multiple sub-images. By dividing the image into multiple images and displaying them, it is possible to interpolate moving images. In addition to the benefits of shorter time, dark images are periodically displayed (the display method is This also provides the advantage of the image display period being closer to the image input period. This reduces blurring of the video due to afterimages, etc., compared to when the length is only half the power cycle. In the example of FIG. 28(B), the “input” and “generation” can be further improved. 28(B) can be performed in the same manner as in the example of FIG. 8(A), so the explanation will be omitted. In the example, "display" means dividing one input image and / or generated image into multiple sub-images. Specifically, as shown in FIG. 28(B), the image 5121 can be displayed as By dividing the image into sub-images 5121a and 5121b and displaying them sequentially, the image appears to the human eye as 5121 is perceived as being displayed, and image 5123 is perceived as being displayed as sub-images 5123a and 512 By dividing the image into 3b and displaying them sequentially, the human eye perceives it as if image 5123 is displayed. The image 5122 is divided into sub-images 5122a and 5122b and displayed sequentially. The human eye perceives the image 5122 as being displayed. The image to be perceived is the same as the example in FIG. 28(A), but the display method is impulse type. Since the image can be made closer to the original image, blurring of moving images due to afterimages and the like can be further improved. The number of divided sub-images is two in FIG. 28(B), but is not limited to this and may be various. The timing at which the sub-image is displayed is as shown in Figure 28 (B ) are set at equal intervals (1 / 2), but it is not limited to this and various display timings can be used. For example, the dark sub-images (5121b, 5122b, 5123b) By speeding up the display timing (specifically, from 1 / 4 to 1 / 2), the display Since the method can be made closer to the impulse type, blurring of moving images due to afterimages etc. can be reduced. Or, you can delay the timing of displaying the dark sub-image (specifically, 1 / 2 to 3 / 4 of the time), the period during which the bright image is displayed can be extended. , the display efficiency can be improved and the power consumption can be reduced.

[0295] Another example of the video interpolation method according to the present embodiment is to detect the shape of an object moving in an image. This is an example in which different processing is performed depending on the shape of the moving object. indicates the timing of display, similar to the example in Figure 28(B), but the displayed content is , and moving text (also called scrolling text, subtitles, tickers, etc.) Note that "input" and "generation" may be the same as in Figure 28(B). The blurring of moving images during hold driving is due to the nature of the moving object. This is especially noticeable when the characters are moving. This is because when reading moving text, your eyes inevitably follow the text, This is because hold blurring is likely to occur. Furthermore, characters should have clear outlines. This can further accentuate the blur caused by the hold blur. That is, it determines whether an object moving in the image is a character, and if so, performs further special processing. This is effective for reducing hold blur. Contour detection and / or pattern detection are performed on the object to determine whether the object is a character. If it is determined that there is a motion error, motion interpolation is performed even for sub-images divided from the same image. By displaying intermediate states of the movement, the movement can be made smoother. If it is determined that the character is not a character, it is divided into two parts from the same image, as shown in Figure 28(B). If the sub-image is a moving object, the position of the moving object can be displayed without changing. In the example shown in Figure 1, the area 5131 that is determined to be a character is moving upward. However, the position of the region 5131 is different between the sub-image 5121a and the sub-image 5121b. Sub-image 5123a and sub-image 5123b, sub-image 5122a and sub-image 51 The same applies to 22b. This allows for a more noticeable blurring effect in moving objects. For text, this makes the movement even smoother than with normal motion compensation double speed drive. Therefore, blurring of moving images due to afterimages or the like can be further improved.

[0296] (Embodiment 9) The semiconductor device can be applied to various electronic devices (including gaming machines). Examples of such devices include television sets (also called televisions or television receivers), Computer monitors, digital cameras, digital video cameras, and other cameras, devices digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable games Examples of such devices include machines, portable information terminals, sound reproduction devices, and large game machines such as pachinko machines.

[0297] FIG. 29(A) shows an example of a television device. The television device 9600 includes: A display unit 9603 is incorporated in a housing 9601. The display unit 9603 displays images. In this case, the housing 9601 is supported by a stand 9605. The figure shows the configuration.

[0298] The television device 9600 can be operated using an operation switch on the housing 9601 or a separate remote control. This can be done by the remote control operation device 9610. The channel and volume can be controlled by the 9609, and the information displayed on the display 9603 is In addition, the remote control operation device 9610 can operate the video. A display portion 9607 for displaying information output from 9610 may be provided.

[0299] The television device 9600 is configured to include a receiver, a modem, and the like. It can receive more general TV broadcasts and can also receive them via wired or wireless modems. By connecting to a communication network, it can be one-way (sender to receiver) or two-way. It is also possible to communicate information (between a sender and a receiver, or between receivers).

[0300] FIG. 29(B) shows an example of a digital photo frame. The frame 9700 has a display unit 9703 built into a housing 9701. 3 is capable of displaying various images, such as images taken with a digital camera. By displaying data, it can function like a regular photo frame.

[0301] The Digital Photo Frame 9700 has an operation panel, external connection terminals (USB terminal, US A terminal that can be connected to various cables such as B cable, etc., and a recording medium insertion section. These components may be incorporated on the same surface as the display unit, but they may be incorporated on the side or back. It is preferable to have a recording medium for a digital photo frame as it improves the design. A memory that stores image data taken with a digital camera is inserted into the body insertion section. The image data can be captured and the captured image data can be displayed on the display portion 9703 .

[0302] The digital photo frame 9700 may also be configured to be capable of transmitting and receiving information wirelessly. It is also possible to configure the device so that desired image data can be wirelessly acquired and displayed.

[0303] FIG. 30(A) shows a portable gaming machine, which is composed of two cabinets, a cabinet 9881 and a cabinet 9891. The housing 9881 is connected to a connector 9893 so as to be openable and closable. A display unit 9883 is incorporated in the housing 9891. The portable gaming machine shown in 30(A) also includes a speaker unit 9884, a recording medium insertion unit 988 6, LED lamp 9890, input means (operation key 9885, connection terminal 9887, sensor 9 888 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, Chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration (including the function of measuring movement, smell or infrared rays), microphone 9889) Of course, the configuration of the portable gaming machine is not limited to the above, and at least It is sufficient that the device is provided, and other auxiliary equipment may be provided as appropriate. The portable gaming machine shown in FIG. 30(A) is a game machine that uses a program or data recorded on a recording medium. It has the function of reading data and displaying it on the display, and communicating information wirelessly with other portable gaming machines. The functions of the portable gaming machine shown in Figure 30(A) are not limited to these. The function is not limited and can have a variety of functions.

[0304] FIG. 30(B) shows an example of a slot machine, which is a large gaming machine. 900 has a display unit 9903 built into a housing 9901. 900 also includes other operating means such as a start lever and stop switch, a coin slot, Of course, the configuration of the slot machine 9900 is not limited to the above. It is not limited to this, and it is sufficient that the device is equipped with at least a semiconductor device, and other auxiliary equipment is provided as appropriate. The configuration can be as follows.

[0305] FIG. 31(A) shows an example of a mobile phone. The mobile phone 1000 has a housing 1001. In addition to the display unit 1002 incorporated in the It is equipped with a speaker 1005, a microphone 1006, etc.

[0306] The mobile phone 1000 shown in FIG. 31(A) displays information by touching the display unit 1002 with a finger or the like. You can also make calls, write emails, and perform other operations. This can be done by touching the display portion 1002 with a finger or the like.

[0307] The screen of the display unit 1002 has three main modes. The first is a display mode that mainly displays images. The first mode is a display mode, and the second mode is an input mode that mainly inputs information such as characters. This is a display + input mode that combines two modes: display mode and input mode.

[0308] For example, when making a call or creating an email, the display unit 1002 is used to input characters. This is the main character input mode, and you can input characters displayed on the screen. It is preferable to display a keyboard or number buttons on most of the screen of the display unit 1002. Desirable.

[0309] In addition, the mobile phone 1000 may include a sensor for detecting tilt, such as a gyro or an acceleration sensor. By providing a detection device having the above configuration, the orientation of the mobile phone 1000 (portrait or landscape) can be determined and the display The screen display of the display unit 1002 can be automatically switched.

[0310] The screen mode can be switched by touching the display unit 1002 or by operating the housing 1001. The type of image displayed on the display unit 1002 can be selected by operating the operation button 1003. For example, the image signal to be displayed on the display unit can be switched by If the data is text data, the mode switches to display mode, and if the data is text data, the mode switches to input mode.

[0311] In the input mode, the optical sensor of the display unit 1002 detects a signal and displays it. If there is no input by touch operation of the part 1002 for a certain period of time, the screen mode is changed to the input mode. Alternatively, the display mode may be switched from the normal mode to the display mode.

[0312] The display unit 1002 can also function as an image sensor. By touching the palm or fingers to the sensor 02 and capturing an image of the palm print or fingerprint, personal authentication can be performed. In addition, a backlight that emits near-infrared light to the display unit or a sensing light that emits near-infrared light By using a source, it is also possible to image finger veins, palm veins, etc.

[0313] FIG. 31B is also an example of a mobile phone. The mobile phone in FIG. 31B has a housing 9411. A display device 9410 including a display portion 9412 and an operation button 9413 is mounted on a housing 9401. An operation button 9402, an external input terminal 9403, a microphone 9404, a speaker 9405, and The communication device 9400 includes a light emitting unit 9406 that emits light when an incoming call is received, and has a display function. The display device 9410 can be attached to and detached from the communication device 9400 having a telephone function in two directions as shown by the arrows. Therefore, the display device 9410 and the communication device 9400 can be attached to each other with their short axes facing each other. The display device 9410 and the communication device 9400 can be attached to each other along their long axes. When only the function is required, the display device 9410 is removed from the communication device 9400. The communication device 9400 and the display device 9410 can be used in wireless communication. It can send and receive images or input information via digital or wired communication, and each is rechargeable. It has a battery.

[0314] Note that this embodiment mode can be implemented in appropriate combination with other embodiment modes. [Explanation of symbols]

[0315] 101 Substrate 102 Conductive film 103 Conductive film 108 Conductive layer 111 insulating film 112 Semiconductor film 114 Conductive film 115 Conductive film 117 Contact Hole 123 Insulating Layer 124 pixel electrode 131 Capacitor element 180 Gray Tone Mask 181 PCB 182 Light blocking section 183 Diffraction grating section 185 Halftone Mask 187 Semi-transparent part 188 Light blocking section 201 Conductive film 206 Conductive Film 207 Conductive Film 208 Insulating layer 300 above room temperature 301 Source wiring section 302 Thin-film transistor section 303 Gate wiring section 331 Source wiring section 332 Thin Film Transistor Section 333 Gate wiring section 334 Holding capacity section 454 Planarization insulating layer 580 board 596 PCB 581 Thin-film transistor 585 insulating film 586 Insulating Film 587 Electrode layer 588 Electrode layer 589 Spherical particles 594 Cavity 595 Filling material 701 Driving TFT 702 Light-emitting element 703 Cathode 704 Light-emitting layer 705 Anode 707 Conductive Layer 711 Driving TFT 712 Light-emitting element 713 Cathode 714 Light-emitting layer 715 Anode 716 Light-shielding film 717 Conductive Layer 721 Driving TFT 722 Light-emitting element 723 Cathode 724 luminescent layer 725 Anode 727 Conductive Layer 1000 mobile phones 1001 Case 1002 Display section 1003 Operation button 1004 External connection port 1005 Speaker 1006 Mike 104a conductive layer 104b Conductive layer 105a Conductive layer 105e conductive layer 106a Resist mask 106e resist mask 107a Conductive layer 107b Conductive layer 107e conductive layer 107f conductive layer 107g conductive layer 108a conductive layer 108b Conductive layer 108e conductive layer 108f conductive layer 108g conductive layer 109a Resist mask 110a conductive layer 110b Conductive layer 113a Semiconductor layer 113e Semiconductor layer 116a Resist mask 118a Resist mask 118e Resist mask 119a Conductive layer 119b Conductive layer 119e conductive layer 119g conductive layer 119h conductive layer 120a Conductive layer 120b conductive layer 120e conductive layer 120g conductive layer 120h conductive layer 121a Resist mask 124e conductive layer 130A thin film transistor 130B Thin Film Transistor 131A Capacitive Element 2600 TFT substrate 2601 Opposing substrate 2602 Sealing material 2603 Pixel section 2604 Display element 2605 Colored layer 2606 Polarizing plate 2607 Polarizing plate 2608 Wiring circuit section 2609 Flexible wiring board 2610 cold cathode tube 2611 Reflector 2612 Circuit Board 2613 Diffuser 2631 Poster 2632 In-car advertising 2700 e-books 2701 Housing 2703 Housing 2705 ​​Display section 2707 Display section 2711 Shaft 2721 Power supply 2723 Operation Key 2725 Speaker 300a resist mask 300e resist mask 4001 board 4002 Pixel section 4003 Signal line driver circuit 4004 Scanning line driver circuit 4005 Sealing material 4006 board 4008 LCD 4010 Thin Film Transistor 400a conductive layer 400e conductive layer 4011 Thin-film transistor 4013 Liquid crystal element 4014 Wiring 4015 Wiring 4016 Connection terminal electrode 4018 FPC 4019 Anisotropic conductive film 401a Conductive layer 4021 Insulation layer 4030 pixel electrode 4031 Counter electrode 4040 wiring 4050 Conductive layer 4060 Conductive layer 4501 Circuit Board 4502 Pixel section 4505 Sealing material 4506 board 4507 Filling material 4509 Thin-film transistor 4510 Thin-film transistor 4511 Light-emitting element 4512 Electrode 4513 Electroluminescent layer 4514 Electrode layer 4515 Connection terminal electrode 4516 Terminal electrode 4517 Electrode layer 4519 Anisotropic conductive film 4520 Bulkhead 5080 pixels 5081 Thin-film transistor 5082 Liquid crystal element 5083 Capacitor 5084 Wiring 5085 Wiring 5086 Wiring 5087 Wiring 5088 pixel electrode 5101 dashed line 5102 solid line 5103 dashed line 5104 Solid line 5105 solid line 5106 Solid line 5107 Solid line 5108 Solid line 5121 images 5122 images 5123 images 5124 area 5125 area 5126 area 5127 Vector 5128 Image Generation Vectors 5129 area 5130 Object 5131 area 590a black area 590b White area 6400 pixels 6401 Thin-film transistor for switching 6402 Driving thin film transistor 6403 Capacitor element 6404 Light-emitting element 6405 signal line 6406 scan lines 6407 Power line 6408 Common electrode 9400 Communication Equipment 9401 Housing 9402 Operation button 9403 External input terminal 9404 Microphone 9405 Speaker 9406 Light-emitting part 9410 Display device 9411 Housing 9412 Display section 9413 Operation button 9600 Television Equipment 9601 Housing 9603 Display section 9605 Stand 9607 Display section 9609 Operation Key 9610 Remote Control Machine 9700 Digital Photo Frame 9701 Housing 9703 Display section 9881 Case 9882 Display section 9883 Display section 9884 Speaker section 9885 Input means (operation keys 9886 Recording medium insertion section 9887 Connection terminal 9888 Sensor 9889 Microphone 9890 LED Lamp 9891 Case 9893 Connection section 9900 slot machine 9901 Housing 9903 Display section 4503a Signal line driver circuit 4503b Signal line driver circuit 4504a Scanning line driver circuit 4504b Scanning line driver circuit 4518a FPC 4518b FPC 5121a Image 5121b Image 5122a Image 5122b image 5123a Image 5123b Image

Claims

1. A display device having a driver circuit and a pixel portion, a first conductive film having a region in contact with an upper surface of a first insulating film and arranged to overlap a channel formation region of a first transistor included in the driver circuit with the first insulating film interposed therebetween; a second conductive film having a region in contact with an upper surface of the first insulating film and arranged to overlap a channel formation region of a second transistor included in the pixel portion with the first insulating film interposed therebetween; a third conductive film having a region in contact with an upper surface of the first conductive film and arranged so as to overlap a channel formation region of the first transistor; a second insulating film having a region in contact with an upper surface of the second conductive film; each of the first conductive film and the second conductive film has light-transmitting properties; each of the first conductive film and the second conductive film includes a plurality of stacked conductive films; Display device.

2. A display device having a driver circuit and a pixel portion, a first conductive film having a region in contact with an upper surface of a first insulating film and arranged to overlap a channel formation region of a first transistor included in the driver circuit with the first insulating film interposed therebetween; a second conductive film having a region in contact with an upper surface of the first insulating film and arranged to overlap a channel formation region of a second transistor included in the pixel portion with the first insulating film interposed therebetween; a third conductive film having a region in contact with an upper surface of the first conductive film and arranged so as to overlap a channel formation region of the first transistor; a second insulating film having a region in contact with an upper surface of the second conductive film; the third conductive film overlaps with a channel formation region of the first transistor in a region in contact with an upper surface of the first conductive film; each of the first conductive film and the second conductive film has light-transmitting properties; each of the first conductive film and the second conductive film includes a plurality of stacked conductive films; Display device.

3. A display device having a driver circuit and a pixel portion, a first conductive film having a region in contact with an upper surface of a first insulating film and arranged to overlap a channel formation region of a first transistor included in the driver circuit with the first insulating film interposed therebetween; a second conductive film having a region in contact with an upper surface of the first insulating film and arranged to overlap a channel formation region of a second transistor included in the pixel portion with the first insulating film interposed therebetween; a third conductive film having a region in contact with an upper surface of the first conductive film and arranged so as to overlap a channel formation region of the first transistor; a second insulating film having a region in contact with an upper surface of the second conductive film; a fixed potential is applied to the first conductive film and the third conductive film; each of the first conductive film and the second conductive film has light-transmitting properties; each of the first conductive film and the second conductive film includes a plurality of stacked conductive films; Display device.

4. A display device having a driver circuit and a pixel portion, a first conductive film having a region in contact with an upper surface of a first insulating film and arranged to overlap a channel formation region of a first transistor included in the driver circuit with the first insulating film interposed therebetween; a second conductive film having a region in contact with an upper surface of the first insulating film and arranged to overlap a channel formation region of a second transistor included in the pixel portion with the first insulating film interposed therebetween; a third conductive film having a region in contact with an upper surface of the first conductive film and arranged so as to overlap a channel formation region of the first transistor; a second insulating film having a region in contact with an upper surface of the second conductive film; the third conductive film overlaps with a channel formation region of the first transistor in a region in contact with an upper surface of the first conductive film; a fixed potential is applied to the first conductive film and the third conductive film; each of the first conductive film and the second conductive film has light-transmitting properties; each of the first conductive film and the second conductive film includes a plurality of stacked conductive films; Display device.

5. In any one of claims 1 to 4, an upper surface of the first conductive film having a region that is not in contact with the third conductive film; Display device.

6. In any one of claims 1 to 5, the third conductive film includes a metal material; Display device.

7. In any one of claims 1 to 6, the oxide semiconductor included in the channel formation region of the first transistor is an In—O-based metal oxide; Display device.

Images