Light-emitting device

Abstract

To provide a display device, etc. with a novel structure in which gate capacitance of a transistor connected to a scan line is reduced, a display device, etc. with a novel structure in which the resistance of a scan line is reduced, a display device, etc. with a novel structure in which pixels can be arranged with high definition, or a display device, etc. with a novel structure in which the increase in manufacturing cost is suppressed.SOLUTION: In a transistor including a first gate electrode and a second gate electrode connected to a scan line, the first gate electrode is formed of a metal material with low resistance and the second gate electrode is formed of a metal oxide material that can reduce oxygen deficiency of an oxide semiconductor layer. The first gate electrode is connected to the scan line and the second gate electrode is connected to a wire to which a constant potential is applied.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a display device provided with a transistor including an oxide semiconductor. .

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one aspect of the present invention relates to a product, a method, or a manufacturing method. Process, Machine, Manufacture, or Composition of Matter In particular, one embodiment of the present invention relates to a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, The present invention relates to a device, a driving method thereof, or a manufacturing method thereof. [Background technology]

[0003] A transistor (field-effect transistor) is made using a semiconductor layer formed on a substrate with an insulating surface. The technology that makes up thin-film transistors (FETs) or thin-film transistors (TFTs) is attracting attention. The transistor is used in power devices such as integrated circuits (ICs) and image display devices (display devices). Silicon is widely used as a semiconductor layer for transistors. The representative semiconductor material is widely known, but oxide semiconductors are also attracting attention. It is being done.

[0004] For example, amorphous oxides containing In, Zn, Ga, Sn, etc. are used as oxide semiconductors. A technique for fabricating a transistor using self-aligned transistors has been disclosed (see Patent Document 1). A technique for fabricating an oxide layer transistor with a top gate structure has been disclosed (Patent (See Reference 2.) In order to increase the field-effect mobility, the field of the upper and lower gate electrodes is used to A technology has been developed to fabricate a transistor with a structure that electrically surrounds the oxide layer where the channel is formed. (see Patent Document 3).

[0005] In addition, a base insulating layer of the oxide semiconductor layer in which a channel is formed is heated to release oxygen. By using an insulating layer to reduce oxygen vacancies in the oxide semiconductor layer, the shift of the threshold voltage is small. A technique for manufacturing a transistor with improved electrical reliability is disclosed. (See Patent Document 4). [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-165529 [Patent Document 2] Japanese Patent Application Laid-Open No. 2009-278115 [Patent Document 3] Japanese Patent Application Laid-Open No. 2014-241404 [Patent Document 4] Japanese Patent Application Laid-Open No. 2012-009836 Summary of the Invention [Problem to be solved by the invention]

[0007] Transistors having an oxide layer are expected to be applied to display devices. In order to obtain high field-effect mobility, high field-effect mobility and high reliability are required. For this purpose, a transistor with a structure that electrically surrounds the oxide layer where the channel is formed is effective. However, the electric field of the gate electrode electrically separates the oxide layer where the channel is formed. When the transistors in the surrounding structure are driven by the signal of the scanning line, the gate capacitance of the transistors is There was a problem with the amount being too large.

[0008] To reduce the gate capacitance, a structure in which the gate electrode surrounds the oxide layer is used. However, in order to obtain high reliability, it is necessary to use an oxide film. When a gate electrode that releases oxygen when heated, such as a silicon layer, is used as the top gate, If the resistance of the gate electrode, that is, the scanning line, becomes higher than that of a metal gate electrode, There was a problem.

[0009] The structure of using a gate electrode that releases oxygen when heated as a top gate is Therefore, it is effective in improving the reliability of the device, and the resistance of the scan line is reduced while maintaining the configuration. To achieve this, a metal gate electrode is used as the bottom gate, and the metal on the bottom gate side A configuration in which the scanning line is formed by wiring is effective. However, the top gate and bottom gate The opening for connecting to the pixel area is formed in a narrow area, making the layout difficult. This makes it difficult to realize a high-definition display device. It is also possible to consider a configuration in which metal wiring is stacked on the gate electrode that releases oxygen to reduce the resistance of the scan line. However, there was a problem that the manufacturing costs increased due to the additional steps.

[0010] In view of the above problem, one embodiment of the present invention is to provide a transistor connected to a scan line having a gate capacitance of 100 Ω / s. It is an object of the present invention to provide a display device or the like having a novel configuration in which the number of pixels is reduced. One aspect of the present invention aims to provide a display device or the like having a novel configuration in which the resistance of the scanning lines is reduced. Another embodiment of the present invention is a novel structure that enables high-resolution pixel arrangement. Another object of the present invention is to provide a display device or the like that can be manufactured at low cost. It is an object of the present invention to provide a display device or the like having a novel structure in which an increase in the temperature is suppressed.

[0011] Note that the problems of one embodiment of the present invention are not limited to the above-listed problems. This does not preclude the existence of other problems. Problems not mentioned in this section are problems that a person skilled in the art would be able to solve by understanding the specification or can be derived from the descriptions in the drawings, etc., and can be extracted appropriately from these descriptions. One aspect of the present invention is to achieve at least the above-listed and / or other objects. It solves one problem. [Means for solving the problem]

[0012] One embodiment of the present invention is a semiconductor device including a first transistor, a second transistor, a first wiring, and a second wiring. and a second wiring, and the first transistor has a first gate electrode and a second gate electrode. a first semiconductor layer, and a second transistor having a first gate electrode and a second gate electrode. a first wiring connected to the first transistor and the second semiconductor layer; The first wiring has the function of transmitting a signal that controls the conduction state of the transistor, and the second wiring transmits a constant voltage. a first gate electrode of the first transistor and a first gate electrode of the second transistor; The gate electrode of the first transistor is electrically connected to the first wiring and is connected to the second gate of the first transistor. the electrode and the second gate electrode of the second transistor are electrically connected to a second wiring; The first semiconductor layer and the second semiconductor layer include an oxide semiconductor. The first gate electrode of the first transistor and the first gate electrode of the second transistor have a metal material. The second gate electrode of the first transistor and the second gate electrode of the second transistor are made of gold. A display device having a metal oxide material.

[0013] One aspect of the present invention is a semiconductor device including a first transistor, a second transistor, and a third transistor. The first transistor has a first gate electrode, a first wiring, and a second wiring. a second gate electrode and a first semiconductor layer, and the second transistor a first gate electrode, a second gate electrode, and a second semiconductor layer; and the third transistor a first gate electrode, a second gate electrode, and a third semiconductor layer; and a first wiring A function of transmitting a signal that controls the conductive state of the first transistor and the second transistor. The second wiring has a function of transmitting a constant voltage and is connected to a first gate voltage of the first transistor. The first electrode and the first gate electrode of the second transistor are electrically connected to the first wiring, and the second The second gate electrode of the first transistor and the second gate electrode of the second transistor are A first gate electrode of the third transistor is electrically connected to the second wiring. The first semiconductor layer and the second gate electrode of the transistor are electrically connected to each other. The semiconductor layer and the third semiconductor layer include an oxide semiconductor, and form a first gate electrode of the first transistor. a first gate electrode of the second transistor, a first gate electrode of the third transistor, The gate electrode has a metal material and is connected to the second gate electrode of the first transistor and the second gate electrode of the second transistor. The second gate electrode of the first transistor and the second gate electrode of the third transistor are made of a metal oxide. A display device having a material.

[0014] One aspect of the present invention is a semiconductor device including a first transistor, a second transistor, and a third transistor. a capacitor, a light-emitting element, a first wiring, and a second wiring, The gate electrode has a first gate electrode, a second gate electrode, and a first semiconductor layer. The transistor has a first gate electrode, a second gate electrode, and a second semiconductor layer. The third transistor includes a first gate electrode, a second gate electrode, a third semiconductor layer, and , and the first wiring controls the conduction state of the first transistor and the second transistor. The first wiring has a function of transmitting a signal to control the first transistor, the second wiring has a function of transmitting a constant voltage, and the first wiring The first gate electrode of the first transistor and the first gate electrode of the second transistor are connected to the first gate electrode of the first transistor. a second gate electrode of the first transistor electrically connected to the line; The second gate electrode is electrically connected to the second wiring and is connected to the source of the first transistor. Alternatively, one of the drains is connected to the first gate electrode of the third transistor and one of the drains of the capacitor. and a second gate electrode of the third transistor, One of the source or drain of the first transistor is connected to the source or drain of the third transistor. one electrode of the capacitor element and one electrode of the light-emitting element are electrically connected to the first electrode of the capacitor element and the second electrode of the light-emitting element. The first semiconductor layer, the second semiconductor layer, and the third semiconductor layer each include an oxide semiconductor. a first gate electrode of the second transistor; a first gate electrode of the third transistor; The first gate electrode of the first transistor has a metal material, and the second gate electrode of the first transistor has a metal material. a second gate electrode of the second transistor, a second gate electrode of the third transistor, A metal oxide electrode is a display device that has a metal oxide material.

[0015] One embodiment of the present invention is a pixel electrically connected to a first wiring and a second wiring, The pixel includes a first transistor and a second transistor, and the first transistor is a first gate electrode, a second gate electrode, and a first semiconductor layer; The transistor has a first gate electrode, a second gate electrode, and a second semiconductor layer. The wiring transmits a signal that controls the conduction state of the first transistor and the second transistor. The first wiring has a function of transmitting a constant voltage, and the second wiring has a function of transmitting a constant voltage. The gate electrode of the first transistor and the first gate electrode of the second transistor are electrically connected to the first wiring. a second gate electrode of the first transistor and a second gate electrode of the second transistor; The electrode is electrically connected to the second wiring, and the first semiconductor layer and the second semiconductor layer are oxidized. a first gate electrode of the first transistor; a first gate electrode of the second transistor; The gate electrode of the first transistor has a metal material and is connected to the second gate electrode of the second transistor. The second gate electrode of the transistor is a display device having a metal oxide material.

[0016] In one embodiment of the present invention, the oxide semiconductor includes oxygen, In, Zn, and M (M is Al, Display devices having a metal oxide layer (Ga, Y, or Sn) are preferred.

[0017] In one embodiment of the present invention, an oxide semiconductor has a crystal part, and the crystal part has a c-axis orientation. A display device that does this is preferred.

[0018] In one embodiment of the present invention, the metal oxide material is a metal oxide material containing oxygen, In, Zn, and M (where M is Al). a display device having a carrier density higher than that of an oxide semiconductor, preferable.

[0019] Other aspects of the present invention will be described in the following embodiments and is shown in the drawings. [Effects of the Invention]

[0020] One embodiment of the present invention is a novel semiconductor device in which the gate capacitance of a transistor connected to a scan line is reduced. Alternatively, in one embodiment of the present invention, a display device or the like having a resistance of a scan line can be provided. It is possible to provide a display device or the like having a novel structure in which the number of pixels is reduced. It is possible to provide a display device or the like having a novel configuration that allows high-definition pixel arrangement. Another embodiment of the present invention is a display device having a novel structure in which an increase in manufacturing cost is suppressed. etc. can be provided.

[0021] The effects of one embodiment of the present invention are not limited to the effects listed above. This does not preclude the existence of other effects. Other effects may be affected by this item, as described below. The effects not mentioned in this section are obvious to a person skilled in the art from the description or can be derived from the descriptions in the drawings, etc., and can be extracted appropriately from these descriptions. One aspect of the present invention has at least the above-listed effects and / or other effects. Therefore, one aspect of the present invention is to provide the above-listed However, there are cases where the effect is not significant. [Brief explanation of the drawings]

[0022] [Figure 1] 1A and 1B are a circuit diagram and a timing chart of a display device according to an embodiment. [Figure 2] 1A and 1B are a top view and a cross-sectional view of a display device according to an embodiment. [Figure 3]FIG. 1 is a top view of a display device according to an embodiment. [Figure 4] 1 is a perspective view of a display device according to an embodiment. [Figure 5] 1 is a cross-sectional view of a display device according to an embodiment. [Figure 6] FIG. 1 is a top view of a display device according to an embodiment. [Figure 7] 1 is a circuit diagram of a display device according to an embodiment. [Figure 8] 1 is a circuit diagram of a display device according to an embodiment. [Figure 9] 1 shows a configuration example of a display device according to an embodiment. [Figure 10] 1 shows a configuration example of a display device according to an embodiment. [Figure 11] 1 shows a configuration example of a display device according to an embodiment. [Figure 12] 1 shows an example of the configuration of a touch panel according to an embodiment. [Figure 13] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 14] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 15] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 16] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 17] 1A to 1C illustrate a method for manufacturing a display device according to an embodiment. [Figure 18] 1. An electronic device according to an embodiment. [Figure 19] 1. An electronic device according to an embodiment. [Figure 20] 1. An electronic device according to an embodiment. [Figure 21] 1. An electronic device according to an embodiment. [Figure 22] 1. An electronic device according to an embodiment. [Figure 23] 1A and 1B are diagrams illustrating energy bands of a transistor in which an oxide semiconductor film is used for a channel region. [Figure 24] 1 is a circuit diagram of a display device according to an embodiment. [Figure 25] 1 is a circuit diagram of a display device according to an embodiment. [Figure 26] 1A and 1B are block diagrams and circuit diagrams according to an embodiment. [Figure 27] FIG. DETAILED DESCRIPTION OF THE INVENTION

[0023] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention is based on the following embodiments. The present disclosure should not be construed as being limited to the contents of the preceding paragraph.

[0024] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and repeated explanations thereof will be omitted. When referring to a function, the hatching pattern is the same and no specific symbol is attached. .

[0025] In each figure described in this specification, the size, layer thickness, or area of ​​each component is The figures may be exaggerated for clarity and are not necessarily limited to that scale. stomach.

[0026] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The number is not a numerical limitation.

[0027] A transistor is a type of semiconductor device that controls the amplification of current and voltage, and conduction or non-conduction. In this specification, the transistor can be , IGFET(Insulated Gate Field Effect Trans istor) and thin film transistor (TFT) ) is included.

[0028] Also, the functions of "source" and "drain" can be changed by using transistors with different polarities. Or, when the direction of the current changes during circuit operation, the positions may be swapped. Therefore, in this specification, the terms "source" and "drain" may be used interchangeably. It shall be possible.

[0029] (Embodiment 1) In this embodiment, a structural example of a display device according to one embodiment of the present invention will be described.

[0030] [Example of circuit diagram] FIG. 1A is a circuit diagram of a pixel included in a display device.

[0031] The pixel PIX includes a transistor M1, a transistor M2, a transistor M3, and a capacitor The pixel PIX includes a scanning line GL, a signal line SL, a current The pixel PIX is connected to the supply line ANODE, the wiring V0, and the common wiring CATHODE. The transistors M1 to M3 correspond to sub-pixels of a pixel that performs color display. Although the transistor will be described as a p-channel transistor, it may be a p-channel transistor.

[0032] The scanning line GL is a wiring that supplies a scanning signal to the pixel. The signal line SL is a signal that controls the conduction state of the pixel. The current supply line ANODE and the common wiring CATHODE are connected to the light emitting element EL The wiring is used to pass current through the wiring. The wiring V0 is a wiring to which a constant voltage is applied.

[0033] The transistors M1 and M2 have gate electrodes provided above and below the semiconductor layer. The gate electrode made of a metal material below the semiconductor layer is connected to the first gate electrode. The electrode (also called bottom gate electrode) is made of metal oxide material on top of the semiconductor layer. The gate electrode that is connected to the transistor is called the second gate electrode (also called the top gate electrode). An example of the transistor configuration applicable to M1 and M2 will be described later. ) The transistor M3 has the same structure as the transistors M1 and M2. However, the metal oxide material is not limited to the above. , is a material having the following properties.

[0034] The first gate electrode of the transistor M1 is connected to the scanning line GL. The second gate electrode of the transistor M1 is connected to the wiring V0. One of the inputs is connected to a signal line SL. are connected to the first gate and second gate electrodes of the transistor M3 and the capacitance element C1. It is connected to one of the electrodes.

[0035] The first gate electrode of the transistor M2 is connected to the scanning line GL. The second gate electrode of the transistor M2 is connected to the wiring V0. One of the terminals is connected to the wiring V0. The other of the source or drain of the transistor M2 is , one of the source and drain of the transistor M3, the other electrode of the capacitive element C1, and It is connected to one electrode of the light-emitting element EL.

[0036] The first gate electrode of the transistor M3 is connected to the source or drain of the transistor M1. On the other hand, a second gate electrode of the transistor M3 and one electrode of the capacitance element C1 are connected to a Either the source or the drain of the transistor M3 is connected to the source or the drain of the transistor M2. The other electrode of the capacitor C1 and the other electrode of the light-emitting element EL are connected to the other of the drain and the other of the electrodes of the capacitor C1 and the light-emitting element EL. The other of the source or drain of the transistor M3 is connected to the current supply line ANODE. Connected.

[0037] One electrode of the capacitance element C1 is connected to the other of the source or drain of the transistor M1. A first gate electrode of the transistor M3 is connected to the first gate electrode of the transistor M4, and a second gate electrode of the transistor M5 is connected to the second gate electrode of the transistor M6. The other electrode of the capacitance element C1 is connected to the other of the source and drain of the transistor M2. The transistor M3 is connected to one of the source and drain electrodes of the light-emitting element EL. To be continued.

[0038] One electrode of the light-emitting element EL is connected to the other of the source or drain of the transistor M2. The resistor M3 is connected to either the source or the drain of the capacitor C1. The other electrode of the light-emitting element EL is connected to a common wiring CATHODE.

[0039] The first gate electrode of the transistor M1 is connected to the first gate electrode of the transistor M2. The scanning lines GL connected to the semiconductor layer are made of a metal material below the semiconductor layer. a first gate electrode of the transistor M1 and a first gate electrode of the transistor M2; The second gate electrode of the transistor M1 and the second gate electrode of the transistor M2 are connected without an intervening part. The wiring V0 connected to the second gate electrode of M2 is located in the upper layer of the transistors M1 and M2. The wiring V0 is formed of a metal material that constitutes the conductive layer in the second The gate electrode and the second gate electrode of the transistor M2 are connected through an opening.

[0040] Next, FIG. 1(B) shows a timing diagram for explaining the simple operation of the circuit of FIG. 1(A). In FIG. 1B, the scanning line GL(n) in the nth row is selected during one scanning period ( P SCAN ) is shown in the figure, and P SCAN In this case, the voltage of the wiring V0 and the voltage of the signal line SL The state of the image signal is illustrated.

[0041] As shown in Figure 1(B), P SCAN In this case, the image signal of the signal line SL is the (n-1)th row. The signal DATA(n-1) of the first row is switched to the signal DATA(n) of the (n)th row. The voltage of the wiring V0 is a constant voltage V0.

[0042] In the above configuration, the first gate electrode and the second gate electrode of the transistors M1 and M2 are In this configuration, the gate electrodes are not connected to each other. In comparison, the gate capacitance between the scanning line GL and the transistor is formed between the first gate electrode and the Since a constant voltage is applied to the wiring V0, the The gate capacitance between the transistors M1 and M2 is not a problem. Compared to when the gate electrodes are connected to each other, the gate capacitance between the scanning line GL and the transistor is Also, by controlling the constant voltage V0 applied to the wiring V0, the transistor M It also has the effect of being able to adjust the threshold voltages of M1 and M2.

[0043] In the above configuration, in the transistors M1 and M2, the first gate electrode is formed in the same layer as the first gate electrode. The scanning lines GL made of a metal material can be arranged. The gate electrode is formed of a conductive layer made of a metal material, and the second gate electrode is formed of an oxide semiconductor. Even if a conductive layer made of a metal oxide material such as This can avoid problems such as high resistance. Also, to reduce the resistance of the scanning line GL, Additionally, the manufacturing cost can be reduced by the amount of wiring made of extra metal material.

[0044] In the above structure, the first gate electrode is formed of a conductive layer made of a metal material, and the second The gate electrode can be formed from a conductive layer composed of a metal oxide material, such as an oxide semiconductor. Therefore, a gate electrode that releases oxygen when heated is used as the second gate electrode. In addition, the reliability of the transistors M1 and M2 can be improved. Since the first gate electrode and the second gate electrode are not connected, it is possible to This allows for a structure in which the gate electrodes are not connected to each other in the same region, making it possible to realize high-definition display devices. It is possible.

[0045] [Transistor configuration example] Here, an example of a transistor configuration applicable to the transistors M1 and M2 is shown in FIG. ) to (C) will be used to explain.

[0046] 2A, 2B, and 2C show examples of semiconductor devices including transistors. The transistors shown in (A) to (C) have a structure in which gate electrodes are provided above and below a semiconductor layer. is.

[0047] 2A is a top view of the transistor 100, and FIG. 2B is a dot-and-dash diagram of FIG. 2A. 2(C) is a cross-sectional view taken along the line X1-X2, and FIG. 2(C) is a cross-sectional view taken along the dashed line Y1-Y2 in FIG. 2(A). In FIG. 2(A), for clarity, components such as the insulating layer 110 are omitted. In the top view of the transistor, the same as in FIG. 2( As with A), some of the components may be omitted. The two directions are called the channel length (L) direction, and the dashed line Y1-Y2 direction is called the channel width (W) direction. This may occur.

[0048] The transistor 100 shown in FIGS. 2A to 2C includes a conductive layer formed on a substrate 102. 106, an insulating layer 104 on the conductive layer 106, and an oxide semiconductor layer 108 on the insulating layer 104. , an insulating layer 110 on the oxide semiconductor layer 108, and an oxide semiconductor layer 112 on the insulating layer 110. , the insulating layer 104, the oxide semiconductor layer 108, and the insulating layer 116 on the oxide semiconductor layer 112. The oxide semiconductor layer 108 has a channel region 108 in contact with the insulating layer 110. i, a source region 108s in contact with the insulating layer 116, and a drain region 108s in contact with the insulating layer 116. 108d.

[0049] The transistor 100 is connected to the semiconductor substrate 100 via an opening 141a in the insulating layer 116. A conductive layer 120a electrically connected to the source region 108s and an opening formed in the insulating layer 116 are formed on the conductive layer 120a. a conductive layer 120b electrically connected to the drain region 108d through the opening 141b; may have

[0050] The conductive layer 106 functions as a first gate electrode and is made of a metal material. The oxide semiconductor layer 112 functions as a second gate electrode and is made of a metal oxide material. The insulating layer 104 functions as a first gate insulating layer, and the insulating layer 11 0 functions as a second gate insulating layer.

[0051] The insulating layer 116 contains either nitrogen or hydrogen, or both. By configuring 16 to have either nitrogen or hydrogen or both, an oxide semiconductor The oxide semiconductor layer 108 and the oxide semiconductor layer 112 are supplied with either nitrogen or hydrogen, or both. can be provided.

[0052] The insulating layer 116 may be, for example, a nitride insulating layer. , silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, etc. The concentration of hydrogen contained in the insulating layer 116 is 1×10 22 atoms / cm 3 It is preferable that this is equal to or greater than this.

[0053] The oxide semiconductor layer 112 has a function of supplying oxygen to the insulating layer 110. The semiconductor layer 112 has a function of supplying oxygen to the insulating layer 110, and thus the insulating layer 110 By having an excess oxygen region in the insulating layer 110, The excess oxygen is supplied to the oxide semiconductor layer 108, more specifically, to the channel region 108i. Therefore, a highly reliable semiconductor device can be provided.

[0054] The insulating layer 110 is formed by using a single layer or a stacked layer of an oxide insulating layer or a nitride insulating layer. The insulating layer 110 can be made of, for example, silicon oxide, silicon oxynitride, silicon nitride, or the like. Silicon oxide, silicon nitride, aluminum oxide, hafnium oxide, gallium oxide or G The film may be made of α-Zn oxide or the like, and may be provided as a single layer or a multilayer.

[0055] The insulating layer 110 formed above the oxide semiconductor layer 108 contains excess oxygen. This makes it possible to selectively supply excess oxygen only to the channel region 108i. Alternatively, the channel region 108i, the source region 108s, and the drain region 108d may be over-doped. After the excess oxygen is supplied, the carrier density of the source region 108s and the drain region 108d is The intensity can be selectively increased.

[0056] The thickness of the insulating layer 110 is preferably smaller than that of the insulating layer 104. As described above, the oxide semiconductor layer 112 functioning as the second gate electrode is connected to the wiring V0 The insulating layer 110 has a small thickness, so that the second gate electrode The insulating layer and the oxide semiconductor layer 108 provide a large parasitic capacitance to the transistor 100. Therefore, it is possible to suppress the breakdown of the transistor due to electrostatic discharge, etc. This can be done.

[0057] The oxide semiconductor layer 112 is formed by supplying oxygen to the insulating layer 110 and then absorbing nitrogen from the insulating layer 116. By supplying either or both of hydrogen and silicon, the carrier density increases. In other words, the oxide semiconductor layer 112 is made of an oxide conductor (OC). Therefore, the oxide semiconductor layer 112 also functions as a gate insulating film or a gate insulating film. The carrier density is higher than that of 08.

[0058] The source region 108s and the drain region 108d of the oxide semiconductor layer 108, The oxide semiconductor layer 112 may contain an element that forms oxygen vacancies. Representative elements that form the oxygen vacancies include hydrogen, boron, carbon, nitrogen, fluorine, and lithium. Examples of rare gas elements include helium, sulfur, chlorine, and rare gas elements. Examples include uranium, neon, argon, krypton, and xenon.

[0059] When an impurity element is added to an oxide semiconductor layer, a bond between a metal element and oxygen in the oxide semiconductor layer is formed. Alternatively, an impurity element is added to the oxide semiconductor layer, and oxygen vacancies are formed. When this occurs, oxygen that has been bonded to a metal element in the oxide semiconductor layer is bonded to an impurity element, and the metal element As a result, oxygen is released from the oxide semiconductor layer, forming oxygen vacancies. The carrier density increases and the conductivity increases.

[0060] In the transistor 100, the side edge of the insulating layer 110 and the side edge of the oxide semiconductor layer 112 In other words, in the transistor 100, the insulating The upper end of the oxide semiconductor layer 110 and the lower end of the oxide semiconductor layer 112 are substantially aligned. The insulating layer 110 is processed using the compound semiconductor layer 112 as a mask to form the above structure. can be done.

[0061] The oxide semiconductor layer 108 and the oxide semiconductor layer 112 are made of In-M-Zn oxide (M is Al The oxide semiconductor layer 108 and the metal oxide layer 109 are made of a metal oxide such as Zn, Ga, Y, or Sn. The oxide semiconductor layer 112 may be made of In—Ga oxide or In—Zn oxide. In particular, the oxide semiconductor layer 108 and the oxide semiconductor layer 112 are made of the same metal. Formation of the metal oxide is preferable because it reduces the manufacturing cost.

[0062] When the oxide semiconductor layer 108 and the oxide semiconductor layer 112 are made of In-M-Zn oxide, I Atoms of the metal elements in the sputtering target used to form nM-Zn oxide films The numerical ratio preferably satisfies In≧M and Zn≧M. The atomic ratio of the metal elements in the ZnO solution is In:M:Zn=1:1:1, In:M:Zn=1: 1:1.2, In:M:Zn=2:1:1.5, In:M:Zn=2:1:2.3, In :M:Zn=2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:4. In:M:Zn=5:1:7, etc. are preferred. and the oxide semiconductor layer 112 have the atomic ratios determined by the above sputtering target. The atomic ratio of the metal elements contained may vary by about plus or minus 40%. For example, The atomic ratio of In:Ga:Zn=4:2:4.1 was used as the sputtering target. In this case, the atomic ratio of the oxide semiconductor layer to be formed is approximately In:Ga:Zn=4:2:3. This may occur.

[0063] The channel region 108i is an oxide semiconductor layer having a low impurity concentration and a low density of defect states. By using the above, a transistor with better electrical characteristics can be manufactured. Here, a low impurity concentration and a low defect level density (few oxygen vacancies) are called high-purity pure silicon. Alternatively, it is called genuine or substantially genuine. A highly intrinsic or substantially highly purified intrinsic oxide semiconductor has few carrier generation sources, Therefore, the carrier density can be reduced in the oxide semiconductor layer. The transistor in which the hole region is formed has electrical characteristics in which the threshold voltage is positive (normal Also known as off-state characteristics.) Also, high purity intrinsic or substantially high purity intrinsic Since the oxide semiconductor layer has a low density of defect states, the oxide semiconductor layer may also have a low density of trap states. In addition, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor layer has a significantly reduced off-state current. Therefore, a channel region is formed in the oxide semiconductor layer, and a small characteristic can be obtained. Such a transistor may have little fluctuation in electrical characteristics and may be a highly reliable transistor. do.

[0064] On the other hand, the source region 108s, the drain region 108d, and the oxide semiconductor layer 112 are The source region 108s, the drain region 108d, and the oxide semiconductor The layer 112 contacts the insulating layer 116, so that the source region 108s, the drain region 108s, and the The oxide semiconductor layer 112 and the oxide region 108d contain hydrogen and / or nitrogen. The carrier density increases due to the addition.

[0065] The carrier density of an oxide semiconductor layer will be described below.

[0066] The factors that affect the carrier density of the oxide semiconductor layer include the oxygen in the oxide semiconductor layer, Examples of the causes include vacancies (Vo) and impurities in the oxide semiconductor layer.

[0067] When the oxygen vacancies in the oxide semiconductor layer increase, hydrogen bonds to the oxygen vacancies (this state is called Vo When the oxide semiconductor layer is oxidized, the density of defect states increases. When the amount of impurities is increased, the density of defect states increases due to the impurities. By controlling the defect state density of the oxide semiconductor layer, the carrier density of the oxide semiconductor layer can be controlled. do.

[0068] Here, a transistor using an oxide semiconductor layer for a channel region will be considered.

[0069] Suppression of a negative shift in the threshold voltage of a transistor or suppression of the off-current of a transistor In order to reduce the carrier density of the oxide semiconductor layer, it is preferable to reduce the carrier density of the oxide semiconductor layer. When the carrier density of the oxide semiconductor layer is reduced, the impurities in the oxide semiconductor layer are It is sufficient to lower the impurity concentration and reduce the defect level density. The low density of defect states is called high purity intrinsic or substantially high purity intrinsic. The carrier density of the conductive oxide semiconductor layer is 8×10 15 cm -3 Less than 1 x10 11 cm -3 less than 1×10 10 cm -3 Less than 1 x 10 -9 cm -3 That's all there is to it.

[0070] On the other hand, improving the on-state current of a transistor or improving the field-effect mobility of a transistor In this case, it is preferable to increase the carrier density of the oxide semiconductor layer. When the carrier density of the oxide semiconductor layer is increased, the impurity concentration of the oxide semiconductor layer is It is only necessary to slightly increase the density of defect states in the oxide semiconductor layer. Alternatively, it is preferable to make the band gap of the oxide semiconductor layer smaller. In the range where the on / off ratio of the Id-Vg characteristics is obtained, the impurity concentration is slightly high, or An oxide semiconductor layer having a slightly high density of defect states can be considered to be substantially intrinsic. The electron affinity is large, and the band gap is accordingly small, resulting in thermal excitation. The oxide semiconductor layer in which the density of trapped electrons (carriers) is increased can be considered to be substantially intrinsic. In addition, when an oxide semiconductor layer having a higher electron affinity is used, the threshold voltage of the transistor is The voltage becomes lower.

[0071] The oxide semiconductor layer with the increased carrier density described above is slightly n-type. Therefore, an oxide semiconductor layer with an increased carrier density is called a "slightly-n" layer. That's fine.

[0072] The carrier density of the essentially intrinsic oxide semiconductor layer is 1×10 5 cm -3 More than 1×10 1 8 cm -3 Less than 1 x 10 is preferable. 7 cm -3 More than 1×10 17 cm -3 The following is preferred: 1×10 9 cm -3 5x10 or more 16 cm -3 Even better: 1 x 10 10 cm -3 More than 1×10 16 cm -3 Even better: 1 x 10 11 cm -3 Below top 1×10 15 cm -3 The following is even more preferred:

[0073] Furthermore, by using the above-described substantially intrinsic oxide semiconductor layer, the reliability of the transistor can be improved. Here, referring to FIG. 23, when an oxide semiconductor layer is used for the channel region, The reason why the reliability of a transistor is improved will be described. 1 is a diagram illustrating an energy band in a transistor used in a channel region.

[0074] In FIG. 23, GE denotes a gate electrode, GI denotes a gate insulating film, and OS denotes an oxide semiconductor layer. and SD represent the source electrode or the drain electrode, respectively. a gate electrode, a gate insulating film, an oxide semiconductor layer, and a source electrode or is an example of the energy band of the drain electrode.

[0075] In FIG. 23, a silicon oxide film is used as the gate insulating film, and an oxide semiconductor The layer is made of In-Ga-Zn oxide. The transition level (εf) of the defect is located at a distance of about 3.1 eV from the bottom of the conduction band of the gate insulating film. The oxide semiconductor layer and silicon oxide layer are formed when the gate voltage (Vg) is 30V. The Fermi level (Ef) of the silicon oxide film at the interface with the gate insulating film is below the conduction band of the The ferrite is formed at a position approximately 3.6 eV away from the edge of the silicon oxide film. The electron level varies depending on the gate voltage. For example, by increasing the gate voltage, the Fermi level (Ef) of the silicon oxide film at the interface between the semiconductor layer and the silicon oxide film The white circles in Figure 23 represent electrons (carriers), and X in Figure 23 represents silicon oxide. represents the defect level in the silicon film.

[0076] As shown in FIG. 23, when a gate voltage is applied, for example, carriers are thermally excited. When this happens, carriers are trapped in the defect level (X in the figure), and the charge changes from positive ("+") to neutral. The charge state of the defect level changes to "0". That is, the Fermi level of the silicon oxide film The sum of the energy of the thermal excitation and the energy of the (Ef) is higher than the defect transition level (εf). When this occurs, the charge state of the defect level in the silicon oxide film changes from a positive state to a neutral state, and a transition occurs. The threshold voltage of the transistor will shift in the positive direction.

[0077] In addition, when oxide semiconductor layers with different electron affinities are used, the gate insulating film and the oxide semiconductor layer The depth at which the Fermi level is formed at the interface with the oxide with a large electron affinity may differ. When an oxide semiconductor layer is used, the gate insulating film is In this case, the defect level that can be formed in the gate insulating film is The Fermi level of the gate insulating film and the oxide semiconductor The energy difference between the Fermi level of the layer and the Therefore, the amount of charge trapped in the gate insulating film is reduced. For example, in the case of the silicon oxide film described above, The change in the charge state of the defect level that can be formed in the gate bias heat (Gate Transistor under Bias Temperature (GBT) stress This can reduce the fluctuation in the threshold voltage of the transistor.

[0078] This completes the description of the carrier density of the oxide semiconductor layer.

[0079] As shown in FIG. 2C, the oxide semiconductor layer 108i is used as a first gate electrode. The conductive layer 106 functions as a second gate electrode, and the oxide semiconductor layer 112 functions as a second gate electrode. Two conductive layers or oxide semiconductors are positioned opposite each other and function as two gate electrodes. It is sandwiched between the body layers.

[0080] With such a structure, the oxide semiconductor layer 108 included in the transistor 100 The scanning signal of the conductive layer 106, which functions as the first gate electrode, and the scanning signal of the conductive layer 106, which functions as the second gate electrode, are applied to the gate electrode. The oxide semiconductor layer 112 functions as a gate electrode. It can be surrounded.

[0081] As described in FIG. 1A, the transistor 100 is formed by connecting the first gate electrode to the transistor. A scanning signal is applied to control the conductive state of the gate electrode 100, and a constant voltage is applied to the second gate electrode. Therefore, a constant voltage is applied to the wiring V0, and the wiring V0 and the transistor The gate capacitance between the transistors M1 and M2 is not a problem, and when the gate electrodes of the transistors M1 and M2 are connected to each other, In comparison with the case where the gate capacitance between the scanning line GL and the transistor is small, the gate capacitance between the scanning line GL and the transistor can be made small.

[0082] The transistor 100 is also electrically connected to a scanning line provided in the same layer as the first gate electrode. The first gate electrode is made of a metal material. The second gate electrode is made of a metal material. The resistance value is smaller than that of metal oxide materials such as the oxide semiconductor layer 112 that is the gate electrode. Therefore, the resistance of the scan line formed of the same material as the conductive layer 106 can be reduced.

[0083] The transistor 100 also has a gate electrode that releases oxygen when heated, such as an oxide layer. The oxide semiconductor layer 112 functions as a second gate electrode. The transistor 100 can be a highly reliable transistor. Thus, the conductive layer 106, which is the first gate electrode, and the scanning line in the same layer reduce the resistance. This makes it possible to compensate for the drawback of the second gate electrode having a large resistance. In addition, in order to reduce the resistance of the oxide semiconductor layer that is the second gate electrode, Compared to a structure that reduces resistance by stacking layers of metal wiring, the number of processes can be reduced, resulting in lower manufacturing costs. This can reduce the

[0084] The transistor 100 also includes a gate electrode for connecting the first gate electrode and the second gate electrode. There is no opening. Therefore, a configuration in which an opening is arranged in a narrow area such as a pixel area can be avoided. Therefore, it is suitable for a high-definition display device.

[0085] [Top view configuration example] Next, FIG. 3 shows a top view applicable to the circuit configuration of FIG. 1A, excluding the configuration of the light emitting element and the like. 4 shows an example of a conductive layer and a semiconductor layer in a vertical relationship in the top view of FIG. The figure shows how the layers are separated into layers and connected through openings. 5(A) is a cross-sectional view taken along the dotted line P1-P2 in FIG. 3, and FIG. 5(B) is a cross-sectional view taken along the dotted line Q1-Q2 in FIG. 3. 6(A) and 6(B) are side-by-side top views of FIG. 3 including the configuration of the light emitting element and the like. FIG.

[0086] In the top view of FIG. 3, the scanning line GL, the signal line SL, the wiring V0, and the current supply line ANODE a transistor M1, a transistor M2, a transistor M3, a capacitance element C1, In the layer structure of the conductive layer and the oxide semiconductor layer, the insulating layer and the like are not shown in the figure. The indication is omitted.

[0087] The layer structure of the conductive layer and the oxide semiconductor layer constituting each wiring etc. in FIG. 3 is shown in FIG. As can be seen from FIG. 5, a conductive layer 151 functioning as a first gate electrode and a and a conductive layer 152. Then, an insulating layer 153 is formed on the insulating layer 153, which functions as a first gate insulating layer. The oxide semiconductor layer 161, the oxide semiconductor layer 162, and the oxide semiconductor layer 16 3 is then provided through an insulating layer 164 that functions as a second gate insulating layer. , an oxide semiconductor layer 171 serving as a second gate electrode, an oxide semiconductor layer 172, and Next, the oxide semiconductor layer 161 and the oxide semiconductor layer 173 are formed. The oxide semiconductor layer 162 and the oxide semiconductor layer 163, as well as the oxide semiconductor layer 171 and the oxide semiconductor layer 1 The insulating layer 72 and the oxide semiconductor layer 173 selectively increase the carrier density to enhance conductivity. Through the layer 174, the source electrode, drain electrode of the transistor, or various wirings are formed. The functional conductive layer 181, the conductive layer 182, the conductive layer 183, the conductive layer 184, and the conductive layer 18 Next, insulating layer 186 and insulating layer 185 are formed. Conductive layer 191 and conductive layer 192 are provided via conductive layer 7. An insulating layer 193 that functions as an interlayer insulating layer is provided on the conductive layer 192. An opening 190 is provided in the layer 186, the insulating layer 187 and the insulating layer 193, reaching the conductive layer 183. This opening 190 will then form a pixel electrode, and a light-emitting element will be formed thereon. This is an opening for connecting to an element.

[0088] In addition, in Figures 3 and 4, the squares with crosses indicate openings formed in the insulating layer. The openings allow the conductive layers and the oxide semiconductor layers to be separated as shown by the arrows in FIG. 4, the conductive layer 151 which becomes the scanning line GL and the conductive layer 152 which becomes the signal line SL are connected. 91, a conductive layer 181 which becomes the wiring V0, and a conductive layer 192 which becomes the current supply line ANODE are shown. are.

[0089] As can be seen from the diagrams in Figures 3, 4 and 5, in transistors M1 and M2, The first gate electrode and the second gate electrode are not connected to each other. , compared to when the gate electrodes of the scanning line GL and the transistors M1 and M2 are connected to each other, The gate capacitance between the first gate electrode and the second gate electrode can be formed only between the first gate electrode and the second gate electrode. Therefore, in the above configuration, the scanning line GL and the transistor are connected to each other, This reduces the gate capacitance between the gate and the transistor.

[0090] As can be seen from FIGS. 3, 4 and 5, in the transistors M1 and M2, In this case, the scanning line GL made of a metal material is arranged in the same layer as the first gate electrode. Therefore, the first gate electrode is formed of a conductive layer made of a metal material, and the second gate electrode is formed of a conductive layer made of a metal material. The gate electrode is formed of a conductive layer made of a metal oxide material such as an oxide semiconductor. Even if this structure is adopted, the problem of the resistance of the scanning line GL becoming high can be avoided. In order to reduce the resistance of the scanning line GL, the manufacturing cost of providing extra wiring made of metal material is can be reduced.

[0091] As can be seen from FIGS. 3, 4 and 5, the two electrodes forming the capacitance element C1 The conductive layer 152 and the oxide semiconductor layer 163 can be used as the insulating layer between the two electrodes. By thinning the insulating layer 153, a capacitor with large capacitance can be provided.

[0092] In addition, in FIG. 6A, the pixels described in FIGS. 3 to 5 are divided into three colors (for example, red (R), green The top view is shown in Figure 6(G, B) as a 2x3 pixel with sub-pixels of blue (G) and blue (B). In A), there are two rows, m and (m+1), and three columns, n, (n+1), and (n+2). The sub-pixels (R1, R2, G1, G2, B1, B2) arranged are shown in FIG. In A), in addition to the opening 190 described with reference to FIGS. 3 to 5, the light-emitting layer 1 constituting the light-emitting element EL is 6A, the m-th scanning line GL_ m, the (m+1)th row scanning line GL_m+1, the nth column signal line SL_n, and the (n+1)th The signal line SL_n+1 in the (n+2)th column, the signal line SL_n+2 in the (n+2)th column, the wiring V0, and the The current supply line ANODE is also shown.

[0093] FIG. 6(B) is a schematic diagram of the top view shown in FIG. 6(A). In the region 22, the light-emitting layer 198 and the partition wall layer 199 are provided. Region 24 is a region where circuits including transistors M1 to M3 are provided. As shown in the figure, the opening 190 is located near the center of the region 24. By arranging the openings 190 at different positions without overlapping, the openings 190 can be arranged at the ends of the regions 22. By adopting this configuration, the light-emitting region can be arranged regardless of the position of the opening 190. It is possible.

[0094] [Variations] A circuit configuration that can be applied to one embodiment of the present invention includes transistors M1 to M2 in FIG. For example, as shown in FIG. 7(A), the pixel configuration is not limited to a pixel having two or less transistors. The present invention is also applicable to pixel configurations having a pixel.

[0095] The pixel configuration shown in FIG. 7A includes a transistor M4, a transistor M5, and a capacitance element C 1A. That is, the transistor M2 in FIG. 1A is omitted. This corresponds to the circuit configuration.

[0096] In the configuration shown in FIG. 7A, the first gate electrode and the second gate electrode of the transistor M4 are 2 is not connected to the gate electrode of the first transistor. Compared with the case where the gate capacitance between the scanning line GL and the transistor is Since the wiring V0 is given a constant voltage, the wiring V The gate capacitance between transistor M1 and transistor M4 is not a problem. Compared with the case where the gate electrode is connected to the scanning line GL, the gate capacitance between the scanning line GL and the transistor is Also, by controlling the constant voltage applied to the wiring V0, the threshold voltage of the transistor M4 can be reduced. This also has the effect of allowing the voltage to be adjusted.

[0097] In the above configuration, in the transistor M4, a metal material is provided in the same layer as the first gate electrode. Therefore, the first gate electrode The first gate electrode is formed of a conductive layer made of a metal material, and the second gate electrode is formed of a metal material such as an oxide semiconductor. Even if a structure formed of a conductive layer made of metal oxide material is adopted, the resistance of the scan line GL is high. In addition, in order to reduce the resistance of the scanning line GL, The manufacturing cost can be reduced by the amount corresponding to the provision of wiring made of metal material.

[0098] In the above structure, the first gate electrode is formed of a conductive layer made of a metal material, and the second The gate electrode can be formed from a conductive layer composed of a metal oxide material, such as an oxide semiconductor. Therefore, a gate electrode that releases oxygen when heated is used as the second gate electrode. In addition, the reliability of the transistor M4 can be improved. Since the electrode and the second gate electrode are not connected, they are mutually isolated in a narrow area such as a pixel area. A high-definition display device can be realized because a configuration in which the gate electrode is not connected can be adopted. do.

[0099] A circuit configuration that can be applied to one embodiment of the present invention is the pixel configuration shown in FIG. For example, as shown in FIG. 7B, a pixel configuration having three or more transistors may be used. This is also applicable to

[0100] The pixel configuration shown in FIG. 7B includes a transistor M6, a transistor M7, and a transistor A transistor M8, a transistor M9, a transistor M10, a transistor M11, and a capacitance element The pixel has a capacitance element C3, a capacitance element C4, a capacitance element C5, and a light-emitting element EL. The configuration includes the signal line SL, the current supply line ANODE, the wiring V0, the common wiring CATHODE, and It operates by the scanning lines GL1 to GL4 and the wirings V1 and V2. The wirings V1 and V2 are connected to a constant voltage. This is the wiring provided.

[0101] In the configuration shown in FIG. 7B, the first gate of the transistors M6 to M10 is The first gate electrode and the second gate electrode are not connected to each other. Compared to when electrodes are connected, the gate capacitance between the scanning lines GL1 to GL4 and the transistors is The wiring V0 is a constant voltage. Therefore, the gate capacitance between the wiring V0 and the transistors M6 to M10 does not matter. Therefore, in the above configuration, the scanning line GL The gate capacitance between the wiring V0 and the transistors GL1 to GL4 can be reduced. By controlling the constant voltage, the threshold voltage of transistors M6 to M10 can be adjusted. It also has an effect.

[0102] In the above configuration, in the transistors M6 to M10, the first gate electrode is formed in the same layer as the first gate electrode. The scanning lines GL1 to GL4 may be made of a metal material. Therefore, the first gate electrode is formed of a conductive layer made of a metal material, and the second gate electrode is formed of a Even if a structure is adopted in which a conductive layer is formed of a metal oxide material such as an oxide semiconductor, This can avoid the problem of the resistance of the scanning lines GL1 to GL4 becoming high. In order to reduce the resistance of the lines GL1 to GL4, extra wiring made of metal material is provided. Costs can be reduced.

[0103] In the above structure, the first gate electrode is formed of a conductive layer made of a metal material, and the second The gate electrode can be formed from a conductive layer composed of a metal oxide material, such as an oxide semiconductor. Therefore, a gate electrode that releases oxygen when heated is used as the second gate electrode. In addition, the reliability of the transistors M6 to M10 can be improved. Since the first gate electrode and the second gate electrode are not connected, it is possible to This allows for a structure in which the gate electrodes are not connected to each other in the same region, making it possible to realize high-definition display devices. It is possible.

[0104] In addition, in FIG. 1A, the transistor M3 has a first gate electrode and a second gate electrode However, one embodiment of the present invention is not limited to this configuration. As shown in FIG. 8(A), the second gate electrode of the transistor M3 is connected to the wiring V0. It may also be composed.

[0105] Alternatively, for example, as shown in FIG. 8B, the first gate electrode of the transistor M3 is Alternatively, for example, as shown in FIG. The first gate electrode of the transistor M3 is connected to one of the source and drain of the transistor M3. This may also be configured as follows.

[0106] In the configurations shown in FIGS. 8A to 8C, in the transistors M1 and M2, The first gate electrode and the second gate electrode are not connected to each other. Compared with the case where the gate electrode is connected to the scanning line GL, the gate capacitance between the scanning line GL and the transistor is The wiring V0 is applied with a constant voltage. Therefore, the gate capacitance between the wiring V0 and the transistors M1 and M2 is not a problem. Therefore, in the above configuration, the scanning line GL and the gate electrode GL are connected to each other. The gate capacitance between the transistors can be reduced. Also, the constant voltage applied to the wiring V0 can be controlled. This also has the effect of adjusting the threshold voltages of the transistors M1 and M2.

[0107] In the above configuration, in the transistors M1 and M2, the first gate electrode is formed in the same layer as the first gate electrode. The scanning lines GL made of a metal material can be arranged. The gate electrode is formed of a conductive layer made of a metal material, and the second gate electrode is formed of an oxide semiconductor. Even if a conductive layer made of a metal oxide material such as This can avoid problems such as high resistance. Also, to reduce the resistance of the scanning line GL, Additionally, the manufacturing cost can be reduced by the amount of wiring made of extra metal material.

[0108] In the above structure, the first gate electrode is formed of a conductive layer made of a metal material, and the second The gate electrode can be formed from a conductive layer composed of a metal oxide material, such as an oxide semiconductor. Therefore, a gate electrode that releases oxygen when heated is used as the second gate electrode. In addition, the reliability of the transistors M1 and M2 can be improved. Since the first gate electrode and the second gate electrode are not connected, it is possible to This allows for a structure in which the gate electrodes are not connected to each other in the same region, making it possible to realize high-definition display devices. It is possible.

[0109] In addition, in FIG. 1A, the second gate of the transistor M1 and the transistor M2 Although the configuration in which both of the gate electrodes are connected to the wiring V0 has been shown, one embodiment of the present invention is For example, as shown in FIG. 24A, the second gate electrode of the transistor M1 is The second gate electrode of the transistor M2 is connected to the wiring V0, and the second gate electrode of the transistor M3 is connected to the scanning line GL. This configuration can increase the current supply capability of the transistor M2. do.

[0110] Alternatively, for example, as shown in FIG. 24(B), the second gate electrode of the transistor M2 is connected to the wiring V0, and the second gate electrode of the transistor M1 is connected to the scanning line GL. This configuration can increase the current supply capability of the transistor M1. Cut.

[0111] In FIG. 1A, the scanning line GL may be a plurality of scanning lines GL1 and GL2. For example, as shown in FIG. 25A, the first gate electrode of the transistor M1 is connected to the scanning line GL 1, and the first gate electrode of the transistor M2 is connected to the scanning line GL2. You may do so.

[0112] In addition, in FIG. 1A, the wiring V0 may be divided into a plurality of wirings V0_1 and V0_2. For example, as shown in FIG. 25B, when the second gate electrode of the transistor M1 is connected to the wiring V0_ 1, and the second gate electrode of the transistor M2 is connected to the wiring V0_1. You may do so.

[0113] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0114] (Embodiment 2) In this embodiment, a cross-sectional structure example of a display device according to one embodiment of the present invention will be described.

[0115] [Example of display device configuration] 9 shows a schematic top view of a display device 10 to be described below. The display device 10 has a pixel section 1 1, a scanning line driving circuit 12, a signal line driving circuit 13, a terminal portion 15, a plurality of wirings 16a, and a plurality of It has a number of wirings 16b etc.

[0116] [Cross-sectional configuration example 1] 10 is a schematic cross-sectional view of the display device 10. FIG. 10 is a cross-sectional view of the display device 10 taken along the line A1-A in FIG. This corresponds to the cross section along A2.

[0117] The display device 10 includes a first substrate 201 and a second substrate 202 bonded together by an adhesive layer 220. It has a combined configuration.

[0118] On the first substrate 201, there are provided terminal portions 15, wiring 16b, and a transistor constituting the signal line driving circuit 13. The transistor 255, the transistor 251 and the transistor 252 that constitute the pixel section 11, A capacitor 253, a light emitting element 254, etc. are provided on the first substrate 201. A layer 211, an insulating layer 212, an insulating layer 213, an insulating layer 214, a spacer 215, etc. are provided. There are.

[0119] The second substrate 202 is provided on the first substrate 201 side with an insulating layer 221, a light-shielding layer 231, and a coloring layer 2 32, structure 230a, structure 230b, etc. are provided.

[0120] A light emitting element 254 is provided on the insulating layer 213. The light emitting element 254 has a first electrode The pixel electrode 225 functions as a pixel electrode, an EL layer 222, and a second electrode 223. An optical adjustment layer 224 is provided between the electrode 225 and the EL layer 222. is provided to cover the edge of the pixel electrode 225 and the optical adjustment layer 224 .

[0121] The transistor 251 is the same as the transistor M1 or M2 described in FIG. 1(A) of the first embodiment. The transistor 252 is a transistor that functions as M1 or M2. This transistor functions as the transistor M3 described in FIG.

[0122] The transistors 251, 252, and 255 have a conductive layer 2 that functions as a first gate electrode. 75, and a conductive layer 272 that functions as a second gate electrode. The semiconductor in which the channel is formed is sandwiched between two gate electrodes. corresponds to the conductive layer 106 functioning as the first gate electrode described in FIG. 2 of the first embodiment. The conductive layer 272 functions as the second gate electrode described in FIG. 2 of the first embodiment. The oxide semiconductor layer 112 corresponds to the oxide semiconductor layer 112.

[0123] The conductive layer 275 serves as an electrode that can repair oxygen vacancies in the semiconductor layer 271 by releasing oxygen. This makes it possible to stabilize the electrical characteristics of the transistor.

[0124] In addition, in a transistor connected to a light emitting element such as the transistor 252, two gates It is preferable to electrically connect the output electrodes to each other and apply the same signal to them. Such a transistor has a higher field-effect mobility than other transistors. This allows for an increase in on-current, resulting in a circuit that can operate at high speed. It can be made.

[0125] In FIG. 10, a part of the conductive layer 274, a part of the insulating layer 217, and a part of the conductive layer 273 are The capacitor element 253 is made up of a part of the conductive layer 275, a part of the insulating layer 211, It may be configured as a part of the semiconductor layer 271 .

[0126] FIG. 10 shows an example in which the light emitting element 254 is a light emitting element with a top emission structure. The light emitted from the light emitting element 254 is emitted to the second substrate 202 side. By this, a transistor, a capacitor, and a Since circuits, wiring, etc. can be arranged, the aperture ratio of the pixel section 11 can be increased.

[0127] The surface of the second substrate 202 facing the first substrate 201 is provided with a colored layer 23 overlapping the light emitting element 254. In addition, the light-shielding layer 231 is provided in the area where the colored layer 232 is not provided. The light-shielding layer 231 may be provided so as to overlap the signal line driving circuit 13, as shown in FIG. Alternatively, the colored layer 232 and the light-shielding layer 231 may be covered with a light-transmitting layer. An overcoat layer may be provided.

[0128] In addition, on the first substrate 201 side of the second substrate 202, in the region inside the adhesive layer 220, A structure 230a is provided, and a structure 230b is provided in an area outside the adhesive layer 220. The structure 230a and the structure 230b are formed by insulating layers at the ends of the second substrate 202. When a crack occurs in the first substrate 221 or the second substrate 202, the crack can be prevented from progressing. In FIG. 10, the structures 230a and 230b are the same as the light-shielding layer 231. 2 shows an example of a laminated structure of a layer made of the same film as the colored layer 232 and a layer made of the same film as the colored layer 232. By using a laminated structure of two or more layers in this way, the progression of cracks can be further suppressed. In this case, the adhesive layer 220 is sandwiched between the structures 230a. Although the configuration in which the structure 230b and the structure 230c are arranged is shown, it is also possible to arrange only one of them. If there is no risk of blockage (for example, if the rigidity of the second substrate 202 is high), The object 230a and the structure 230b may not be provided.

[0129] The spacer 215 is provided on the insulating layer 214. The spacer 215 is The gap space is controlled so that the distance between the first substrate 201 and the second substrate 202 does not become shorter than necessary. The spacer 215 has a function as a spacer. The angle is preferably 45 degrees or more and 120 degrees or less, more preferably 60 degrees or more and 100 degrees or less. It is more preferable that the angle be between 75 degrees and 90 degrees. This makes it easier to form a region where the thickness of the EL layer 222 is thin on the side surface of the spacer 215. Therefore, a current flows between adjacent light-emitting elements via the EL layer 222. In particular, when the pixel section 11 has high definition, the phenomenon of light emission can be suppressed. In this case, the distance between adjacent light emitting elements becomes small, so that the spacer 215 having such a shape can be used to emit light. It is effective to provide the EL layer 222 between the optical elements. This is particularly effective when

[0130] The spacer 215 serves as a shielding mass when forming the EL layer 222, the second electrode 223, etc. When a mask is used, the mask has a function of preventing scratches on the surface to be formed. It's fine.

[0131] The spacers 215 are preferably provided so as to overlap the wiring that crosses the scan lines.

[0132] 10 shows an example of a display device 10 using a color filter method. As the layer 232, three colors of red (R), green (G), and blue (B) are applied. In addition, a white (W) sub-pixel may be used to express one color. Applying yellow (Y) and yellow (Y) sub-pixels improves color reproducibility and reduces power consumption. preferable.

[0133] In the light-emitting element 254, a microcavity is formed by the colored layer 232 and the optical adjustment layer 224. The combination of structures allows the display device 10 to extract light with high color purity. The thickness of the optical adjustment layer 224 may be different depending on the color of each sub-pixel. In some cases, the optical adjustment layer may not be provided.

[0134] In addition, an EL layer that emits white light is used as the EL layer 222 included in the light emitting element 254. By applying such a light-emitting element 254, the EL layer 222 is formed in each sub-pixel. Since there is no need to paint the pixels separately, costs can be reduced and yields can be improved. Furthermore, by providing optical adjustment layers with different thicknesses for each sub-pixel, The EL layer 222 may be painted differently for each sub-pixel. Either one of the layer and the colored layer, or both of them may be omitted. In each sub-pixel, at least the light-emitting layer of the EL layer 222 is formed by coating, and the other layers are It may be formed without being painted separately.

[0135] FIG. 10 shows an example in which an FPC 242 electrically connected to the terminal portion 15 is provided. Therefore, the display device 10 shown in Fig. 10 can also be called a display module. Furthermore, a display device without an FPC or the like can also be called a display panel.

[0136] The terminal portion 15 is electrically connected to the FPC 242 via the connection layer 243 .

[0137] In FIG. 10, the terminal portion 15 is made of the same conductive film as the wiring 16b and the pixel electrode 225. In this way, the terminal portion 15 is formed by stacking a plurality of conductive layers. The layered structure not only reduces electrical resistance but also increases mechanical strength. This is preferable because it can be done easily.

[0138] The insulating layers 211 and 221 are made of a material that is difficult for impurities such as water and hydrogen to diffuse. That is, it is preferable that the insulating layer 211 and the insulating layer 221 function as a barrier film. With this configuration, the first substrate 201 and the second substrate 202 can be Even if a moisture-permeable material is used, the light emitting element 254 and the transistors may be exposed to the outside. This effectively prevents impurities from entering through the display, resulting in a highly reliable display device. This makes it possible to achieve this position.

[0139] In FIG. 10, a hollow seal having a space 250 between a first substrate 201 and a second substrate 202 is shown. For example, the space 250 may be filled with an inert gas such as nitrogen or a rare gas. The space 250 may be filled with a liquid crystal material or a fluid material such as oil. Alternatively, the space 250 may be depressurized. However, the present invention is not limited to this, and may be a solid seal filled with resin or the like.

[0140] [Cross-sectional configuration example 2] FIG. 11 shows a pixel section 11 and a signal line driving circuit 13 suitable for use in a bent state. 1 shows an example of the configuration of a display device.

[0141] The display device 10 shown in FIG. 11 is configured such that the first substrate 201 and the second substrate 202 are sealed with a sealing material 260. Therefore, an example of a case where a bonded solid sealing structure is provided is shown.

[0142] The first substrate 201 has an adhesive layer 261 on it, and an insulating layer 216 on it. Transistors, light emitting elements, etc. are provided on the insulating layer 216. As with 21, a material that is resistant to the diffusion of impurities such as water and hydrogen can be used.

[0143] In addition, an adhesive layer 262 is provided between the second substrate 202 and the insulating layer 221 .

[0144] 11, the insulating layer 213 is formed on the pixel section 11 and the signal line driving circuit 13. An opening is provided on the outer periphery of the first substrate 201. For example, the insulating layer 213 When a resin material is used, an opening is provided to surround the pixel section 11, the signal line driving circuit 13, etc. With this configuration, the vicinity of the side surface of the insulating layer 213 that is in contact with the outside is preferably Since the overlapping portions of the pixel section 11 and the signal line driving circuit 13 are not continuous, the pixel section 11 and the signal line driving circuit 13 are insulated from the outside. The diffusion of impurities such as water and hydrogen through the edge layer 213 can be suppressed.

[0145] As shown in FIG. 11, a solid sealing structure is formed between the first substrate 201 and the second substrate 202. Therefore, it is easy to keep the distance between the first substrate 201 and the second substrate 2 A flexible substrate can be suitably used as the pixel portion 11. The scanning line driving circuit 12 and the signal line driving circuit 13 are partially or entirely folded for use. For example, the display device 10 can be attached to a curved surface, or the pixel portion of the display device 10 can be By folding the device, electronic devices of various shapes can be realized.

[0146] [Variations] An example of a touch panel having a touch sensor will be described below.

[0147] FIG. 12 shows a touch panel in which an on-cell type touch sensor is applied to the configuration shown in FIG. 10. An example of a rule is shown.

[0148] On the outer surface of the second substrate 202, a conductive layer 291 and a conductive layer 292 are provided. An insulating layer 294 is provided over the insulating layer 294. A conductive layer 293 is provided on the insulating layer 294. The conductive layer 293 is disposed so as to sandwich the conductive layer 291 via an opening provided in the insulating layer 294. The insulating layer 294 and the substrate 296 are electrically connected to the two conductive layers 292 that are attached to the substrate 296. are bonded together by an adhesive layer 295.

[0149] The capacitance formed between the conductive layer 291 and the conductive layer 292 changes when the object to be detected approaches. This makes it possible to detect the approach or contact of a detection object. By arranging a number of conductive layers 291 and a number of conductive layers 292 in a grid pattern, position information is obtained. It is possible.

[0150] In addition, a terminal portion 299 is provided in an area close to the outer periphery of the second substrate 202. 99 is electrically connected to the FPC 297 via a connection layer 298 .

[0151] Here, the substrate 296 is also used as a substrate that is directly touched by a sensing object such as a finger or a stylus. In this case, a protective layer (ceramic coating, etc.) may be provided on the substrate 296. The protective layer is preferably made of, for example, silicon oxide, aluminum oxide, yttrium oxide, Inorganic insulating materials such as yttria-stabilized zirconia (YSZ) can be used. Alternatively, tempered glass may be used for the substrate 296. The tempered glass may be tempered by an ion exchange method, an air-cooling method, or the like. The material is subjected to physical or chemical treatment and compressive stress is applied to the surface. The touch sensor can be provided on one side of the tempered glass, and the other side can be used as a surface for, for example, an electronic device. By placing it on the top surface of the device and using it as a touch surface, the overall thickness of the device can be reduced. can.

[0152] As the touch sensor, for example, a capacitance type touch sensor can be applied. There are various types of capacitive touch sensors, such as surface capacitive touch sensors and projected capacitive touch sensors. There are various methods such as self-capacitance method and mutual capacitance method. When using the mutual capacitance method, simultaneous multi-point In the following, we will explain how to apply a projected capacitive touch sensor. This section explains the case where

[0153] However, the present invention is not limited to this, and it is also possible to detect the approach or contact of a detection object such as a finger or a stylus. Various sensors that can be used for this purpose can also be applied.

[0154] Here, wiring and the like that constitute the touch sensor are formed on the outer surface of the second substrate 202. Although the configuration of the so-called on-cell type touch panel is shown, the present invention is not limited to this. Applies to the configuration of attached (out-cell) touch panel and in-cell touch panel. By using an on-cell or in-cell touch panel configuration, the display panel Even if a touch panel function is added to the display, the thickness can be reduced.

[0155] The above is a description of the cross-sectional configuration example.

[0156] [About each component] Each of the above components will be described below.

[0157] 〔substrate〕 A material having a flat surface can be used for the substrate of the display device. The substrate on the side from which the light is extracted is made of a material that transmits the light. For example, glass, quartz, ceramic Materials such as aramic, sapphire, and organic resins can be used.

[0158] By using a thin substrate, the display device can be made lighter and thinner. In addition, by using a substrate with a thickness that allows flexibility, a flexible display device can be realized. Cut.

[0159] Examples of glass include alkali-free glass, barium borosilicate glass, and aluminophobic glass. Usable materials include silicate glass.

[0160] Examples of materials that are flexible and transparent to visible light include: Thickness of glass, polyethylene terephthalate (PET), polyethylene naphthalate Polyester resins such as (PEN), polyacrylonitrile resins, polyimide resins, polymers methyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PE S) Resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamide imide resin, polyvinyl chloride resin, polytetrafluoroethylene (PTFE) resin, etc. In particular, it is preferable to use a material with a low thermal expansion coefficient, such as polyamideimide. Resin, polyimide resin, PET, etc. can be suitably used. Uses substrates impregnated with resin or substrates with a lower thermal expansion coefficient by mixing inorganic fillers into organic resin Since the substrate using such a material is light in weight, it is possible to The display device can also be made lighter.

[0161] In addition, the substrate on the side from which light is not extracted does not need to be light-transmitting. In addition to the substrate, a metal substrate or the like can also be used. Metal substrates have high thermal conductivity and are suitable for sealing substrates. Heat can be easily conducted across the entire plate, preventing local temperature increases in the display device. ,preferable.

[0162] The material for the metal substrate is not particularly limited, but examples thereof include aluminum, copper, and nickel. Metals such as nickel, or alloys such as aluminum alloys or stainless steel are preferably used. It is possible.

[0163] In addition, insulating treatment is performed by oxidizing the surface of the metal substrate or forming an insulating film on the surface. For example, a substrate that has been subjected to a coating process such as spin coating or dipping, or an electrodeposition process may be used. The insulating film may be formed by deposition, evaporation, sputtering, or the like. In addition to leaving it in the air or heating it, an oxide film is formed on the surface of the substrate by anodizing or other methods. That's fine.

[0164] A hard coat layer (e.g., , silicon nitride layer, etc.) or a layer of material that can distribute pressure (for example, aramid resin layer, etc.) In addition, in order to prevent the reduction in the life of the light emitting element due to moisture, etc. Alternatively, an insulating film with low water permeability may be laminated on a flexible substrate. Inorganic insulating materials such as silicon, silicon oxynitride, aluminum oxide, and aluminum nitride are used. You can be there.

[0165] The substrate may be formed by laminating a plurality of layers. In particular, a substrate having a glass layer may be used. This improves the barrier properties against water and oxygen, making it possible to provide a highly reliable display device. For example, a substrate having a glass layer, an adhesive layer, and an organic resin layer stacked from the side closer to the light emitting element is used. By providing such an organic resin layer, it is possible to prevent breakage or cracks in the glass layer. The composite of such glass material and organic resin can suppress the generation of heat and improve the mechanical strength. By applying the composite material to the substrate, it becomes an extremely reliable flexible display device. It is possible.

[0166] [Transistor] The transistor included in the display device has a conductive layer serving as a front gate electrode and a buffer layer. a conductive layer functioning as a gate electrode, a semiconductor layer, and a conductive layer functioning as a source electrode; a conductive layer functioning as a drain electrode and an insulating layer functioning as a gate insulating layer. do.

[0167] That is, in the transistor included in the display device of one embodiment of the present invention, gate electrodes are provided above and below the channel. It is a structure in which electrodes are provided.

[0168] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single-crystal semiconductor, or a semiconductor having a partially crystalline region) If a semiconductor having crystallinity is used, This is preferable because it can suppress deterioration of the resistor characteristics.

[0169] As a semiconductor material used for a transistor, for example, an oxide semiconductor is used for the semiconductor layer. In particular, oxide semiconductors with a larger band gap than silicon can be used. It is preferable that the semiconductor has a wider band gap than silicon and a lower carrier density. The use of a conductive material is preferable because it can reduce the current when the transistor is in an off state.

[0170] For example, the oxide semiconductor may contain at least indium (In) or zinc (Zn It is preferable that the oxide contains In-M-Zn (wherein M is Al, Ti, Metals such as Ga, Ge, Y, Zr, Sn, La, Ce or Hf) nothing.

[0171] In particular, the semiconductor layer has a plurality of crystal portions, and the c-axes of the crystal portions are aligned with the surface on which the semiconductor layer is formed. Or, the crystals are oriented approximately perpendicular to the upper surface of the semiconductor layer, and grain boundaries are observed between adjacent crystal portions. It is preferable to use an oxide semiconductor layer that is not subject to oxidation.

[0172] Such oxide semiconductors have no crystal grain boundaries, so when the display panel is bent, The occurrence of cracks in the oxide semiconductor layer due to stress is suppressed. Such oxide semiconductors are suitable for use in flexible display devices that are used in a curved state. It is possible.

[0173] In addition, by using such a crystalline oxide semiconductor for the semiconductor layer, This suppresses fluctuations in the resistance, thereby achieving a highly reliable transistor.

[0174] In addition, a transistor using an oxide semiconductor with a wider band gap than silicon is Due to its low off-state current, the charge stored in the capacitor connected in series with the transistor can be maintained for a long period of time. By applying such a transistor to a pixel, It is also possible to stop the driving circuit while maintaining the gradation of the image displayed in each display area. As a result, a display device with extremely reduced power consumption can be realized.

[0175] [Conductive Layer] In addition to the gate, source, and drain of the transistor, various wiring and Materials that can be used for conductive layers such as electrodes include aluminum, titanium, chromium, and titanium dioxide. Aluminum, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or titanium Examples of such metals include tungsten and alloys containing tungsten as the main component. Films containing the materials can be used as single layers or as laminated structures. For example, silicon a single layer structure of aluminum film containing titanium; a two-layer structure of aluminum film laminated on titanium film; Two-layer structure with aluminum film laminated on stainless steel film, copper-magnesium-aluminum alloy Two-layer structure with copper film laminated on gold film, two-layer structure with copper film laminated on titanium film, tungsten Two-layer structure with copper film laminated on top of titanium film or titanium nitride film, and aluminum film laminated on top of that. A titanium film or a titanium nitride film is formed on the aluminum or copper film. Layer structure, molybdenum film or molybdenum nitride film, and aluminum film or A three-layer structure in which a copper film is laminated and a molybdenum film or molybdenum nitride film is formed on top of that It is also possible to use oxides such as indium oxide, tin oxide, or zinc oxide. In addition, copper containing manganese is preferable because it improves the controllability of the shape by etching. .

[0176] Further, the light-transmitting material can be used for conductive layers such as various wirings and electrodes that constitute a display device. Materials with this property include indium oxide, indium tin oxide, and indium zinc oxide. Conductive oxides such as zinc oxide and zinc oxide doped with gallium, or graphene are used. Or gold, silver, platinum, magnesium, nickel, tungsten, chromium , molybdenum, iron, cobalt, copper, palladium, titanium, or other metal materials, An alloy material containing the metal material can be used. Alternatively, a nitride of the metal material (e.g., nitride Titanium) may be used. Metal materials and alloy materials (or their nitrides) may be used. In the case where the conductive layer is made of a material other than the conductive material, the conductive layer may be thin enough to have light-transmitting properties. For example, an alloy of silver and magnesium and indium tin oxide can be used. It is preferable to use a laminated film or the like, since the conductivity can be increased.

[0177] [Insulating layer] Examples of insulating materials that can be used for the insulating layers, overcoats, spacers, etc. include: For example, resins such as acrylic and epoxy resins, and resins having siloxane bonds such as silicone resins. Others include silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide. Alternatively, inorganic insulating materials such as ammonium may be used.

[0178] It is also preferable that the light emitting element is provided between a pair of insulating films with low water permeability. This prevents impurities such as water from entering the light emitting element, and prevents a decrease in the reliability of the device. It can be controlled.

[0179] As insulating films with low water permeability, films containing nitrogen and silicon such as silicon nitride film and silicon nitride oxide film are used. and films containing nitrogen and aluminum, such as an aluminum nitride film. A silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may also be used.

[0180] For example, the water vapor permeation rate of a low-permeability insulating film is 1×10 -5 [g / (m 2 ·day) ] or less, preferably 1 × 10 -6 [g / (m 2 ·day)] or less, preferably 1 × 1 0 -7 [g / (m 2 ·day)] or less, more preferably 1 × 10 -8 [g / (m 2 ·d ay)] below.

[0181] [Adhesive layer, sealing material] The adhesive layer and sealing material can be a photo-curable adhesive such as an ultraviolet curable adhesive, a reaction-curable adhesive, or a heat-curable adhesive. Various curing adhesives such as curable adhesives and anaerobic adhesives can be used. Examples include epoxy resin, acrylic resin, silicone resin, phenolic resin, and polyimide resin. Oil, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) Resins, EVA (ethylene vinyl acetate) resins, etc. In particular, epoxy resins, etc. A material with low moisture permeability is preferable. Two-component resin may also be used. A card or the like may also be used.

[0182] The resin may also contain a desiccant. For example, an oxide of an alkaline earth metal (an acid The material used is one that absorbs moisture by chemical adsorption, such as calcium oxide or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb water by physical adsorption. If a desiccant is included, impurities such as moisture can be absorbed into the functional element. This is preferable because it can suppress the intrusion of foreign matter and improve the reliability of the display panel.

[0183] Furthermore, by mixing a filler with a high refractive index or a light scattering material into the resin, it is possible to For example, titanium oxide, barium oxide, Zeolite, zirconium, etc. can be used.

[0184] [Light-emitting element] The light emitting element can be a self-luminous element, which can be illuminated by current or voltage. The category includes devices whose light intensity is controlled, such as light-emitting diodes (LEDs), organic An EL element, an inorganic EL element, etc. can be used.

[0185] Light-emitting elements are available in top-emission, bottom-emission, and dual-emission types. The electrode on the light extraction side uses a conductive film that transmits visible light. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. stomach.

[0186] The EL layer has at least a light-emitting layer. The EL layer has a hole-injecting layer as a layer other than the light-emitting layer. high hole-transporting material, hole-blocking material, high electron-transporting material, electron injection materials with high electron transporting and hole transporting properties, or bipolar materials (materials with high electron transporting and hole transporting properties), etc. The film may further include a layer containing a metal oxide.

[0187] The EL layer can be made of either low molecular weight compounds or high molecular weight compounds. The layers constituting the EL layer may each be formed by a deposition method (including a vacuum deposition method). The layer can be formed by a method such as a transfer method, a printing method, an ink jet method, or a coating method.

[0188] When a voltage higher than the threshold voltage of the light-emitting element is applied between the cathode and anode, the EL layer is charged from the anode side. Holes are injected from the cathode side, and electrons are injected from the cathode side. The injected electrons and holes are The luminescent material contained in the EL layer emits light.

[0189] When a white light emitting element is used as the light emitting element, two or more types of light emitting elements are used in the EL layer. For example, it is preferable to use a configuration in which two or more luminescent materials each emit light of a complementary color. White light can be obtained by selecting a luminescent material so that the following relationship is established. Luminescent materials that emit light in R (red), G (green), B (blue), Y (yellow), O (orange), etc. Or among luminescent materials that emit light containing spectral components of two or more colors of R, G, and B, It is preferable that the spectrum of light emitted from the light-emitting element is in the visible light region. A light-emitting element having two or more peaks within a wavelength range (for example, 350 nm to 750 nm) It is preferable to apply the light emitting spectrum of the material having a peak in the yellow wavelength region. is preferably a material that also has spectral components in the green and red wavelength regions.

[0190] The EL layer is made up of a light-emitting layer containing a light-emitting material that emits one color and a light-emitting layer containing a light-emitting material that emits another color. For example, a plurality of light-emitting layers in the EL layer are preferably stacked. The layers may be stacked in contact with each other or separated by an area that does not contain any light-emitting material. For example, a fluorescent-emitting layer or a phosphorescent-emitting layer may be laminated between the fluorescent-emitting layer and the phosphorescent-emitting layer. The phosphorescent layer contains the same materials (for example, a host material and an assist material) as the phosphorescent layer, and A region that does not contain any optical material may be provided. This makes it easier to manufacture the light-emitting element. Furthermore, the driving voltage is reduced.

[0191] The light-emitting element may be a single element having one EL layer, or a light-emitting element having multiple EL layers. and a charge generating layer may be laminated therebetween to form a tandem element.

[0192] The conductive film that transmits visible light is made of, for example, indium oxide or indium tin oxide (ITO). Indium Tin Oxide, Indium Zinc Oxide, Zinc Oxide, Gallium-doped In addition, gold, silver, platinum, magnesium, nickel, etc. can be used. aluminum, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium Metallic materials such as nitriding agents, alloys containing these metallic materials, or nitrides of these metallic materials (e.g., nitrides) Titanium dioxide) can also be used by forming it thin enough to have light-transmitting properties. A laminated film of the above materials can be used as the conductive layer. For example, an alloy of silver and magnesium It is preferable to use a laminated film of ITO and ITO because it can increase the conductivity. Lafene and the like may also be used.

[0193] The conductive film that reflects visible light is made of, for example, aluminum, gold, platinum, silver, nickel, tungsten, or the like. Metallic materials such as stainless steel, chromium, molybdenum, iron, cobalt, copper, or palladium, or In addition, the above metal materials and alloys may contain lanthanum. Tungsten, neodymium, germanium, etc. may be added. Aluminum alloys such as tungsten alloys, aluminum-nickel alloys, and aluminum-neodymium alloys Alloys containing palladium (aluminum alloys), silver and copper alloys, silver, palladium and copper alloys, An alloy containing silver, such as an alloy of silver and magnesium, can be used. An alloy containing silver and copper can be It is preferable because it has high heat resistance. Furthermore, a metal film or a metal oxide film in contact with the aluminum alloy film By laminating the film, oxidation of the aluminum alloy film can be suppressed. Examples of the material for the metal oxide film include titanium and titanium oxide. A transparent conductive film and a film made of a metal material may be laminated together. For example, a laminated film of silver and ITO may be used. Alternatively, a laminated film of an alloy of silver and magnesium and ITO can be used.

[0194] The conductive layers may be formed by evaporation or sputtering. Using a discharge method such as inkjet printing, a printing method such as screen printing, or a plating method It can be formed.

[0195] The above-mentioned light-emitting layer, the substance having a high hole injection property, the substance having a high hole transport property, and the electrode The layer containing a substance having a high electron transporting property, a substance having a high electron injecting property, a bipolar substance, or the like is These include inorganic compounds such as quantum dots and polymer compounds (oligomers, dendrimers, polymers, etc.). For example, by using quantum dots in the light-emitting layer, It can also function as

[0196] The quantum dot materials include colloidal quantum dot materials, alloy quantum dot materials, Core-shell type quantum dot materials, core type quantum dot materials, etc. can be used. , materials containing elements from groups 12 and 16, 13 and 15, or 14 and 16 Alternatively, cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, Quantum dot materials containing elements such as lead, gallium, arsenic, and aluminum may also be used.

[0197] [Colored layer] Materials that can be used for the coloring layer include metal materials, resin materials, pigments, and dyes. Examples include resin materials.

[0198] [Light blocking layer] Materials that can be used for the light-shielding layer include carbon black, metal oxides, and a plurality of metals. In addition, the light-shielding layer may contain the material of the coloring layer. For example, a material used for a colored layer that transmits light of a certain color can be used. and a layer structure of a film containing a material used for a colored layer that transmits light of other colors. By using the same material for the colored layer and the light-shielding layer, it is possible to standardize the equipment and simplify the process. This is preferable because it can be simplified.

[0199] [Connection layer] The connection layer that connects the FPC or IC to the terminals is made of anisotropic conductive film (ACF). Anisotropic Conductive Film (ACP) and Anisotropic Conductive Paste (ACP) Anisotropic Conductive Paste) can be used. do.

[0200] This concludes the explanation of each component.

[0201] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0202] (Embodiment 3) In this embodiment mode, an example of a manufacturing method of a display device using a flexible substrate will be described. do.

[0203] Here, the light-emitting elements, circuits, wiring, electrodes, insulating layers, and light-shielding layers, etc. The layers containing the optical components are collectively called the element layer. In addition to the light-emitting element, wiring electrically connected to the light-emitting element, transistors used in pixels and circuits, The sensor may also include elements such as a capacitor.

[0204] In this case, when the light emitting device is completed (when the manufacturing process is completed), the device layer is supported. A flexible member that supports the substrate is called a substrate. This also includes extremely thin films of 10 nm or more and 300 μm or less.

[0205] A typical method for forming an element layer on a flexible substrate having an insulating surface is to There are two methods as follows: One is to form the element layer directly on a flexible substrate. The other method is to form an element layer on a support substrate that is different from the flexible substrate. After that, the element layer is peeled off from the support base, and the element layer is transferred to the substrate. Although not described in detail, in addition to the above two methods, a device layer may be formed on a non-flexible substrate. Alternatively, the substrate may be made flexible by thinning it by polishing or the like.

[0206] If the material constituting the substrate is heat resistant to the heat applied in the process of forming the element layer, It is preferable to form the element layer directly on the substrate, since this simplifies the process. When the element layer is formed while the plate is fixed to the support substrate, it is difficult to transport the plate within and between devices. This is preferable because it is easier.

[0207] In addition, when a method is used in which an element layer is formed on a support base material and then transferred to a substrate, the support material is first A release layer and an insulating layer are laminated on the support substrate, and an element layer is formed on the insulating layer. The element layer is then transferred to the substrate. A material may be selected that allows peeling to occur at the interface between the peeling layer and the insulating layer or within the peeling layer. In this method, a material with high heat resistance is used for the support substrate and the peeling layer, and the element layer is formed. This allows for an increase in the upper limit of the temperature during the formation of a device layer, resulting in a device with higher reliability. This is preferable because it is possible.

[0208] For example, a layer containing a high melting point metal material such as tungsten as a peeling layer and a layer containing the metal material Layers containing oxide are stacked. In addition, silicon oxide, silicon nitride, etc. are used as insulating layers on the peeling layer. It is preferable to use a multi-layer structure of silicon, silicon oxynitride, silicon nitride oxide, etc. In this specification, an oxynitride is a compound containing more oxygen than nitrogen. Nitrogen oxide refers to a material that has a high nitrogen content compared to oxygen. Refers to the material.

[0209] The element layer and the support substrate can be separated by applying a mechanical force or by peeling the separation layer. Examples include etching or infiltrating the peeled interface with a liquid. Alternatively, the difference in thermal expansion between the two layers that form the peel interface can be used to heat or cool the material. The peeling may be carried out by

[0210] When peeling begins, a starting point for peeling is first formed, and peeling progresses from that starting point. The starting point of peeling is preferably a point where a part of the insulating layer or the peeling layer is locally heated by laser light or the like. and by physically cutting or penetrating a part of the insulating layer or peeling layer with a sharp object. It can be formed.

[0211] Furthermore, if peeling is possible at the interface between the support substrate and the insulating layer, it is not necessary to provide a peel layer.

[0212] For example, glass is used as the support substrate, and an organic resin such as polyimide is used as the insulating layer. By doing so, it is possible to peel off the interface between the glass and the organic resin. The above organic resins can also be used as the substrate.

[0213] Alternatively, a heat generating layer is provided between the support substrate and an insulating layer made of organic resin, and the heat generating layer is heated. By doing so, the heat generating layer may be peeled off at the interface between the heat generating layer and the insulating layer. Materials that generate heat by passing current through them, materials that generate heat by absorbing light, and materials that generate heat by applying a magnetic field. For example, the heat generating layer can be made of various materials, such as a material that generates heat by heating. The material can be selected from semiconductors, metals, and insulators.

[0214] A more specific example of the manufacturing method will be described below. By changing the layer formed as the peeled layer, the flexible input / output device of one embodiment of the present invention can be realized. Force devices can also be fabricated.

[0215] First, an island-shaped release layer 303 is formed on a fabrication substrate 301, and a layer to be peeled 3 is formed on the release layer 303. Separately, an island-shaped peeling layer 325 is formed on the fabrication substrate 321 (FIG. 13(A)). A layer 323 is formed, and a layer to be peeled 325 is formed on the peeling layer 323 (FIG. 13(B)).

[0216] Here, an example of forming an island-shaped release layer is shown, but the present invention is not limited to this. When peeling the peeled layer from the substrate, the interface between the substrate and the peeled layer, and the interface between the peeled layer and the layer to be peeled In this embodiment, a material is selected that allows separation to occur in the peeling layer. This example shows a case where peeling occurs at the interface of the peeling layer, but the combination of materials used for the peeling layer and the layer to be peeled may also cause peeling. In addition, when the layer to be peeled has a laminated structure, the layer in contact with the peeling layer The layer is specifically referred to as the first layer.

[0217] For example, when the peeling layer has a laminated structure of a tungsten film and a tungsten oxide film, Peeling occurs at the interface (or near the interface) between the tungsten film and the tungsten oxide film, A part of the peeling layer (here, the tungsten oxide film) may remain on the peeling side. The remaining release layer may then be removed.

[0218] The substrate used for the fabrication is a substrate that has at least heat resistance that can withstand the processing temperature during the fabrication process. The substrate for fabrication may be, for example, a glass substrate, a quartz substrate, a sapphire substrate, a semiconductor substrate, a ceramic substrate, or the like. A ceramic substrate, a metal substrate, a resin substrate, a plastic substrate, or the like can be used.

[0219] When a glass substrate is used as the substrate for preparation, an oxide film is formed between the substrate for preparation and the peeling layer as a base film. Forming insulating films such as silicon film, silicon oxynitride film, silicon nitride film, and silicon nitride oxide film This is preferable because it can prevent contamination from the glass substrate.

[0220] The release layer is made of tungsten, molybdenum, titanium, tantalum, niobium, nickel, or cobalt. Zirconium, Zinc, Ruthenium, Rhodium, Palladium, Osmium, Iridium an element selected from silicon, an alloy material containing the element, or a compound material containing the element, etc. The crystal structure of the silicon-containing layer may be amorphous, microcrystalline, or polycrystalline. Also, aluminum oxide, gallium oxide, zinc oxide, titanium dioxide, indium oxide, Gold, such as indium, indium tin oxide, indium zinc oxide, and In-Ga-Zn oxide The peeling layer may be made of a high melting point metal such as tungsten, titanium, or molybdenum. The use of a metal material is preferable because it increases the degree of freedom in the process of forming the peeled layer.

[0221] The release layer can be formed by, for example, sputtering, plasma CVD, or coating (spin coating). The peeling layer can be formed by a method such as a droplet ejection method, a dispensing method, or a printing method. is, for example, 10 nm or more and 200 nm or less, preferably 20 nm or more and 100 nm or less.

[0222] When the release layer has a single layer structure, it is made up of a tungsten layer, a molybdenum layer, or a combination of tungsten and molybdenum. It is preferable to form a layer containing a mixture of tungsten and tungsten. a layer containing an oxynitride, a layer containing an oxide or oxynitride of molybdenum, or a layer containing tungsten Alternatively, a layer containing an oxide or oxynitride of a mixture of silicon and molybdenum may be formed. The mixture of tungsten and molybdenum is, for example, a mixture of tungsten and molybdenum. Correct.

[0223] In addition, a layer containing tungsten and a layer containing tungsten oxide may be used as a peeling layer. When forming a structure, a layer containing tungsten is formed, and an insulating layer made of oxide is formed on top of it. By forming a film, a tungsten oxide film is formed at the interface between the tungsten layer and the insulating film. The surface of the tungsten-containing layer may be subjected to thermal oxidation. Oxidizing agents such as oxygen plasma treatment, nitrous oxide (N2O) plasma treatment, and ozone water A layer containing tungsten oxide may be formed by treating with a solution or the like. Treatment and heating may be carried out using oxygen, nitrogen, or nitrous oxide, either alone or in combination with other gases. The plasma treatment or heat treatment may be performed under a mixed gas atmosphere. By changing the temperature, it is possible to control the adhesion between the release layer and the insulating film that will be formed later. be.

[0224] Note that if peeling can be performed at the interface between the formation substrate and the peeled layer, a peeling layer may not be provided. For example, glass is used as the substrate, and polyimide, polyester, or polyimide is placed in contact with the glass. Next, an organic resin such as polyolefin, polyamide, polycarbonate, or acrylic is formed. By performing laser irradiation or heat treatment, the adhesion between the formation substrate and the organic resin is improved. Then, insulating films and transistors are formed on the organic resin. Laser irradiation is performed at a higher energy density, or heat treatment is performed at a higher temperature than the previous heat treatment. By doing this, it is possible to separate the organic resin from the substrate at the interface. Separation may also be achieved by infiltrating a liquid into the interface between the substrate and the organic resin.

[0225] In this method, insulating films and transistors are formed on organic resins with low heat resistance, so In the manufacturing process, it is not possible to expose the substrate to high temperatures. Since the capacitor does not require a high-temperature manufacturing process, it can be suitably formed on an organic resin.

[0226] The organic resin may be used as a substrate for forming a device, or the organic resin may be removed. Alternatively, another substrate may be attached to the exposed surface of the layer to be peeled using an adhesive. Another substrate (support film) may be attached to the resin using an adhesive.

[0227] Alternatively, a metal layer is provided between the substrate and the organic resin, and a current is passed through the metal layer. The layer may be heated to effect peeling at the interface between the metal layer and the organic resin.

[0228] The insulating layer (first layer) formed in contact with the peeling layer is a silicon nitride film or a silicon oxynitride film. The insulating film may be formed in a single layer or multiple layers using a silicon oxide film, a silicon nitride oxide film, or the like. However, the present invention is not limited to this, and an optimum material can be selected depending on the material used for the release layer. This can be done.

[0229] The insulating layer is formed by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. For example, it is possible to form a thin film at a temperature of 250°C or higher and 400°C or higher by plasma CVD. By forming the film at a temperature of 0.5 ° C. or less, a dense and highly moisture-proof film can be obtained. The thickness of the insulating layer is 10 nm to 3000 nm, and further 200 nm to 1500 nm. Below is preferred.

[0230] Next, the fabrication substrate 301 and the fabrication substrate 321 are placed so that the surfaces on which the peeled layers are formed face each other. The adhesive layer 307 is used to bond the two pieces together so that they face each other, and the adhesive layer 307 is cured (FIG. 13( C).

[0231] The bonding of the fabrication substrate 301 and the fabrication substrate 321 is preferably carried out under a reduced pressure atmosphere. It's nice.

[0232] In addition, FIG. 13C shows a case where the peeling layer 303 and the peeling layer 323 have different sizes. However, as shown in FIG. 13(D), a release layer of the same size may be used.

[0233] The adhesive layer 307 is connected to the peeling layer 303, the peeled layer 305, the peeled layer 325, and the peeling layer 323. The end of the adhesive layer 307 is placed on the release layer 303 or the release layer 323. It is preferable that the edge of the film is located inside at least one of the edges (the edge that is to be peeled first). This prevents the fabrication substrate 301 and the fabrication substrate 321 from adhering too closely to each other, and the subsequent peeling process can be carried out. This can prevent the yield from decreasing.

[0234] The adhesive layer 307 may be made of, for example, a light-curing adhesive such as an ultraviolet-curing adhesive, a reaction-curing adhesive, or a heat-curing adhesive. Various types of curing adhesives such as curing adhesives and anaerobic adhesives can be used. Adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, and polyimide. Examples include amide resin, imide resin, PVC resin, PVB resin, EVA resin, etc. A material with low moisture permeability, such as epoxy resin, is preferable. It is preferable to use a material with low fluidity so that it can be used as a material for adhesive sheets, pressure sensitive adhesive sheets, etc. Alternatively, a sheet or film adhesive may be used. For example, OCA (optical adhesive) A clear adhesive film can be preferably used.

[0235] The adhesive may have adhesiveness before bonding, and may be adhesive by heating or irradiating with light after bonding. The adhesiveness may be exhibited by

[0236] The resin may also contain a desiccant. For example, an oxide of an alkaline earth metal (an acid The material used is one that absorbs moisture by chemical adsorption, such as calcium oxide or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb water by physical adsorption. Adsorbent materials may be used. If a desiccant is included, the function of the device will be impaired by the ingress of moisture from the atmosphere. This is preferable because it can suppress deterioration of the elements and improve the reliability of the device.

[0237] Next, a starting point for peeling is formed by irradiation with laser light (FIGS. 14(A) and 14(B)).

[0238] The fabrication substrate 301 and the fabrication substrate 321 may be peeled from either one of them. In this case, the substrate may be peeled off from a substrate on which a large peeling layer is formed, or from a substrate on which a small peeling layer is formed. It may be peeled off from the substrate. In this case, the film may be peeled off from the substrate on which the element is formed, or from the other substrate. Here, an example is shown in which the fabrication substrate 301 is first peeled off.

[0239] The laser beam is directed to the adhesive layer 307 in a cured state, the peeled layer 305, and the peeling layer 303, which are overlapped with each other. The area is irradiated (see arrow P1 in FIG. 14(A)).

[0240] By removing a part of the first layer, a starting point for peeling can be formed (the area surrounded by the dotted line in FIG. 14(B)). At this time, not only the first layer but also other layers of the layer to be peeled 305 and the peeling layer 3 03. A portion of the adhesive layer 307 may be removed.

[0241] The laser light is preferably irradiated from the substrate side on which the peeling layer to be peeled is provided. When the laser beam is irradiated to the region where the layer 303 and the peeling layer 323 overlap, By forming cracks only in the layer to be peeled 305 among the layer to be peeled 325, the substrate can be selectively fabricated. The plate 301 and the release layer 303 can be peeled off (see the area surrounded by the dotted line in FIG. 14(B)). Here, an example is shown in which a part of each layer constituting the peeled layer 305 is removed.

[0242] Then, the layer to be peeled 305 and the substrate 301 are separated from each other at the peeling starting point (FIG. 14(C)(D)). As a result, the peeled layer 305 is removed from the fabrication substrate 301 to the fabrication substrate 321. can be transposed to

[0243] For example, from the starting point of peeling, physical force (peel-off by hand or jig, roller The layer to be peeled 305 and the substrate 301 are separated by a process such as a process of separating the layer while rotating the substrate. That's fine.

[0244] In addition, a liquid such as water is permeated into the interface between the peeling layer 303 and the peeled layer 305 to form the fabrication substrate 3 The liquid may be separated from the peeling layer 303 and the peeled layer 305 by capillary action. By penetrating between the separation layers 305, separation can be easily achieved. Static electricity adversely affects the functional elements included in the peeled layer 305 (semiconductor elements are electrostatically It can suppress damage such as destruction by energy.

[0245] Next, the exposed peeled layer 305 and the substrate 331 are bonded together using an adhesive layer 333. The adhesive layer 333 is cured (FIG. 15(A)).

[0246] It is preferable that the peeled layer 305 and the substrate 331 are bonded together in a reduced pressure atmosphere. .

[0247] Next, a starting point for peeling is formed by irradiation with laser light (FIGS. 15(B) and (C)).

[0248] The laser beam is focused on the adhesive layer 333 in a cured state, the peeled layer 325, and the peeling layer 323, which are overlapped with each other. The area is irradiated (see arrow P2 in FIG. 15(B)). This allows the formation of a peeling starting point (see the area surrounded by the dotted line in Figure 15(C). Here is an example of removing part of each layer that makes up 325.) In this case, not only the first layer but also Other layers of the layer to be peeled 325, or parts of the peeling layer 323 and adhesive layer 333 may be removed.

[0249] It is preferable that the laser light is irradiated from the side of the formation substrate 321 on which the peeling layer 323 is provided. .

[0250] Then, the peeled layer 325 and the fabrication substrate 321 are separated from each other at the peeling starting point (FIG. 15(D)). As a result, the layer to be peeled 305 and the layer to be peeled 325 are transferred to the substrate 331. It is possible.

[0251] After that, a substrate can be further attached to the layer to be peeled 325 .

[0252] The exposed peeled layer 325 and the substrate 341 are bonded together with an adhesive layer 343. 16(A) ) is hardened. In this step, the opening is formed in the substrate 341 in advance. This shows an example of this.

[0253] In this manner, the layer to be peeled can be sandwiched between the pair of flexible substrates.

[0254] Thereafter, as shown in FIG. 16(B), unnecessary end portions of the substrates 331, 341, etc. are cut off. At this time, the end portions of the layer to be peeled 305 and the layer to be peeled 325 may be removed at the same time. It may be cut.

[0255] By the above method, a flexible device can be manufactured. By using the configuration exemplified in the above embodiment, a flexible display device can be manufactured. can.

[0256] In the above-described method for manufacturing a display device according to one embodiment of the present invention, After bonding a pair of substrates having the above-mentioned structure, a starting point for peeling is formed by irradiating the substrate with laser light. Then, the peeling layer and the peeled layer are brought into a state where they can be easily peeled from each other, and then the peeling is carried out. This can improve the yield of the peeling process.

[0257] In addition, after a pair of substrates on which a peeled layer is formed are bonded together in advance, After peeling, a substrate constituting a device to be manufactured can be attached to the peeled layer. Therefore, when bonding the layers to be peeled together, it is necessary to bond the substrates having low flexibility together. This allows for more accurate alignment of the substrates than when bonding flexible substrates together. It can be improved.

[0258] As shown in FIG. 17A, the edge of the region 351 to be peeled of the peeled layer 305 is It is preferable that the edge of the peeling layer 303 is positioned inside the edge of the peeling layer 303. This improves the yield of the peeling process. In addition, when there are a plurality of regions 351, as shown in FIG. As shown in FIG. 17(C), a peeling layer 303 may be provided for each region 351. A plurality of regions 351 may be provided on one release layer 303 .

[0259] The above is a description of the method for manufacturing a flexible display device.

[0260] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0261] (Fourth embodiment) In this embodiment, examples of electronic devices to which the display device of one embodiment of the present invention can be applied will be described. do.

[0262] Electronic devices and lighting devices can be manufactured using the display device of one embodiment of the present invention. By using such a display device, electronic devices and lighting devices with high display quality can be manufactured. By using such a display device, electronic devices and lighting devices with good viewing angle characteristics can be manufactured. By using the display device of one embodiment, electronic devices and lighting devices with reduced power consumption can be manufactured. In addition, highly reliable electronic devices and lighting devices can be manufactured using the display device of one embodiment of the present invention. .

[0263] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Personal computers, computer monitors, digital cameras, digital videos Cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, audio players Examples include live video equipment, large gaming machines such as pachinko machines, etc.

[0264] The electronic device or lighting device according to one embodiment of the present invention can be used for interior or exterior walls of a house or building, Alternatively, it can be incorporated along curved surfaces in the interior or exterior of a vehicle.

[0265] The electronic device of one embodiment of the present invention may include a secondary battery and may be powered by wireless power transmission. It is preferable that the secondary battery can be charged.

[0266] As the secondary battery, for example, a lithium polymer battery (lithium ion battery) using a gel electrolyte is used. Lithium-ion secondary batteries such as lithium-ion polymer batteries, nickel-metal hydride batteries, nickel-cadmium batteries, organic Examples include radical batteries, lead-acid batteries, secondary air batteries, nickel-zinc batteries, and silver-zinc batteries. do.

[0267] The electronic device according to one embodiment of the present invention may include an antenna. By doing so, it is possible to display images, information, etc. on the display unit. If the device has a secondary battery, the antenna may be used for contactless power transmission.

[0268] The electronic device according to one embodiment of the present invention includes a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation Number, distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor or infrared) It may have.

[0269] The electronic device of one embodiment of the present invention can have various functions. (still images, videos, text images, etc.) on the display, touch panel function, calendar Functions such as displaying date and time, running various software (programs) functions, wireless communication functions, and functions to read programs or data recorded on recording media. It can have functions etc.

[0270] Furthermore, in an electronic device having a plurality of display units, one display unit is mainly used for displaying image information. and one display unit mainly displays text information, or multiple displays By displaying images that take parallax into consideration, it is possible to have a function for displaying a three-dimensional image. Furthermore, electronic devices with an image receiving unit have the function of taking still or moving images, Functions for automatically or manually correcting captured images, and for storing captured images on a recording medium (external or electronic) It can have functions such as saving the captured image to a memory card (built into the device) and displaying the captured image on the display. Note that the functions of the electronic device of one embodiment of the present invention are not limited to those described above, and various functions can be used. It can have:

[0271] 18A to 18E show examples of electronic devices having a curved display portion 7000. FIG. The display unit 7000 has a curved display surface, and displays information along the curved display surface. The display unit 7000 may be flexible.

[0272] The display portion 7000 is manufactured using the display device or the like according to one embodiment of the present invention. This reduces power consumption and provides a highly reliable electronic device with a curved display. can.

[0273] An example of a mobile phone is shown in Figures 18(A) and 18(B). 18B. Each of the mobile phone 7100 and the mobile phone 7110 shown in FIG. 18B includes a housing 7101, a display unit 7102, and a 000, operation button 7103, external connection port 7104, speaker 7105, microphone 71 18B further includes a camera 7107. Has.

[0274] Each mobile phone has a touch sensor on the display unit 7000. All operations, such as entering text, can be performed by touching the display 7000 with a finger or a stylus. It can be done.

[0275] In addition, by operating the operation button 7103, the power can be turned on and off, and the display unit 7000 For example, from the email creation screen, you can change the type of image displayed. You can switch to the main menu screen.

[0276] Also, a detection device such as a gyro sensor or an acceleration sensor may be provided inside the mobile phone. The orientation of the mobile phone (portrait or landscape) is then determined and the orientation of the screen display of the display unit 7000 is automatically adjusted. The screen orientation can be dynamically switched. Touching 7000, operating the operation button 7103, or using the microphone 7106 This can also be done by inputting, etc.

[0277] 18(C) and (D) show examples of the portable information terminal. The portable information terminal shown in FIG. The portable information terminal 7200 and the portable information terminal 7210 shown in FIG. 18(D) each include a housing 7201 and a It has a display unit 7000. It also has operation buttons, an external connection port, a speaker, a microphone, and an The display unit 7000 may have an antenna, a camera, a battery, etc. The mobile information terminal is operated by touching the display unit 7000 with a finger or a stylus. This can be done.

[0278] The portable information terminal exemplified in this embodiment is, for example, a telephone, a notebook, an information viewing device, etc. Specifically, as a smartphone, The portable information terminal exemplified in this embodiment can be, for example, a mobile phone, a telephone E-mail, viewing and writing text, playing music, internet communication, computer games, etc. A variety of applications can be executed.

[0279] The portable information terminal 7200 and the portable information terminal 7210 are configured to display text and image information on a plurality of For example, as shown in Figure 18(C) and (D), three operation buttons can be displayed on the screen. A button 7202 can be displayed on one side, and rectangular information 7203 can be displayed on the other side. FIG. 18(C) shows an example in which information is displayed on the upper side of the mobile information terminal, and FIG. 18(D) Here is an example of information being displayed on the side of a mobile information terminal. The information may be displayed on the

[0280] Examples of such information include notifications from social networking services (SNS). , display notifying you of incoming e-mails or phone calls, subject of e-mails or sender name , date and time, battery level, antenna reception strength, etc. Instead of information, operation buttons, icons, etc. may be displayed at the position where the information is displayed.

[0281] For example, the user of the mobile information terminal 7200 may place the mobile information terminal 7200 in the breast pocket of his / her clothes. When the item is stored, the display (information 7203 in this example) can be confirmed.

[0282] Specifically, the telephone number or name of the caller of the incoming call is recorded on the mobile information terminal 7200. The user can take the mobile information terminal 7200 out of his / her pocket and You can check the display and decide whether to answer the call without taking it out.

[0283] FIG. 18(E) shows an example of a television device. The television device 7300 has a housing 7 The display unit 7000 is built into the housing 7301. 301 is shown as a supported configuration.

[0284] The television device 7300 shown in FIG. 18E is operated by an operation switch provided in the housing 7301. This can be done by a separate remote control 7311 or the display unit 70. The display unit 7000 may be provided with a touch sensor, and the operation can be performed by touching the display unit 7000 with a finger or the like. The remote control operator 7311 may display information to be output from the remote control operator 7311. The remote control unit 7311 may have a display unit that displays the operation keys or touch panel. The channel and volume can be controlled by the touch panel, and the information displayed on the display unit 7000 can be displayed. You can control the video that is displayed.

[0285] The television device 7300 includes a receiver, a modem, and the like. The receiver can receive general television broadcasts. By connecting to a wireless communication network, it can be transmitted in one direction (sender to receiver) or It is also possible to communicate information in both directions (between sender and receiver, or between receivers). be.

[0286] FIG. 18(F) shows an example of a lighting device having a curved light-emitting portion.

[0287] The light-emitting portion of the lighting device illustrated in FIG. 18F is formed using the display device or the like according to one embodiment of the present invention. According to one aspect of the present invention, a light emitting device having reduced power consumption, a curved light emitting portion, and A highly reliable lighting device can be provided.

[0288] The light-emitting portion 7411 of the lighting device 7400 shown in FIG. 18(F) has two convexly curved Therefore, the light emitting units are arranged symmetrically around the lighting device 7400. It can illuminate in all directions.

[0289] The light-emitting unit 7411 included in the lighting device 7400 may be flexible. 7411 is fixed with a plastic member or a movable frame, and light is emitted according to the application. The light emitting surface of the portion 7411 may be configured to be freely bendable.

[0290] The lighting device 7400 includes a base 7401 having an operation switch 7403, and a It has a light emitting portion 7411 that is supported.

[0291] Here, the illumination device in which the light-emitting unit is supported by the base is exemplified. The housing may be fixed to the ceiling or hung from the ceiling. The light-emitting surface can be curved, so a specific area can be illuminated by curving the light-emitting surface concavely. It can be used to illuminate a small area, or the light-emitting surface can be curved convexly to illuminate an entire room.

[0292] 19(A) to 19(I) show a display device having a flexible and bendable display portion 7001. 1 shows an example of a portable information terminal.

[0293] The display portion 7001 is manufactured using a display device or the like according to one embodiment of the present invention. It is possible to apply a display device that can be bent to a diameter of 0.01 mm or more and 150 mm or less. The display portion 7001 may be provided with a touch sensor, and when the display portion 7001 is touched with a finger or the like, According to one aspect of the present invention, a flexible display can be used to operate a mobile information terminal. It is possible to provide a highly reliable electronic device having such a part.

[0294] 19(A) and 19(B) are perspective views showing an example of a portable information terminal. 00 denotes a housing 7501, a display unit 7001, a drawer member 7502, an operation button 7503, etc. It has.

[0295] The portable information terminal 7500 has a flexible display unit rolled up in a housing 7501. The display unit 7001 can be pulled out using a pull-out member 7502. do.

[0296] In addition, the mobile information terminal 7500 can receive video signals using a built-in control unit. The portable information terminal 7500 can display the captured image on the display unit 7001. The housing 7501 is equipped with a terminal for connecting a connector, The image signal and power may be supplied directly from the outside via wires.

[0297] In addition, the operation button 7503 can be used to turn the power on and off and to switch the displayed image. 19(A) and 19(B), the mobile information terminal 7500 In this example, the operation buttons 7503 are arranged on the surface of the mobile information terminal 7500. It may be placed on the same surface (front surface) as the display surface or on the back surface.

[0298] FIG. 19B shows a portable information terminal 7500 with the display portion 7001 pulled out. In this state, an image can be displayed on the display unit 7001. 19(A) in a rolled state and FIG. 19(B) in which the display unit 7001 is pulled out. The portable information terminal 7500 may be configured to display different images depending on the state. For example, as shown in FIG. In the state (A), the rolled-up part of the display unit 7001 is hidden. This allows the power consumption of the portable information terminal 7500 to be reduced.

[0299] When the display unit 7001 is pulled out, the display surface of the display unit 7001 is made flat. To fix the display unit 7001, a reinforcing frame may be provided on the side of the display unit 7001.

[0300] In addition to this configuration, a speaker is provided on the housing, and the audio signal received together with the video signal is output. The configuration may be such that sound is output.

[0301] 19(C) to 19(E) show an example of a foldable mobile information terminal. ) is in the unfolded state, and in Figure 19(D) is in either the unfolded or folded state. In FIG. 19(E), the portable information terminal 7 is in a folded state. The portable information terminal 7600 is highly portable when folded and unfolded. In this state, the large, seamless display area provides excellent visibility.

[0302] The display unit 7001 is supported by three housings 7601 connected by hinges 7602. By bending the two housings 7601 via the hinge 7602, the portable information The terminal 7600 can be reversibly transformed from an unfolded state to a folded state.

[0303] Figures 19(F) and (G) show an example of a foldable mobile information terminal. In FIG. 19(G), the display unit 7001 is folded inward. The mobile information terminal 7650 is shown folded with the side 7001 facing outwards. The terminal 7650 has a display portion 7001 and a non-display portion 7651. When not in use, the display unit 7001 can be folded inward. This can prevent the surface from getting dirty and scratched.

[0304] FIG. 19(H) shows an example of a flexible portable information terminal. , a housing 7701 and a display portion 7001. Further, a button 7703a serving as an input portion, 7703b, speakers 7704a and 7704b as audio output units, and an external connection port 770 5, a microphone 7706, etc. The portable information terminal 7700 may be flexible. The battery 7709 can be mounted on the display unit 700. It may be placed on top of 1.

[0305] The housing 7701, the display portion 7001, and the battery 7709 are flexible. The portable information terminal 7700 can be bent into a desired shape and twisted. For example, the display portion 7001 of the portable information terminal 7700 is Alternatively, the portable information terminal 7700 can be folded so that the outer side faces outward. The display unit 7701 and the housing 7701 can be rolled up and used. Since the mobile information terminal 7700 can freely deform, even if it is dropped, This has the advantage that it is less likely to be damaged even when an external force is applied to it unintentionally.

[0306] In addition, since the portable information terminal 7700 is lightweight, the upper part of the housing 7701 can be held with a clip or the like. Do not use it by holding it and hanging it, or by fixing the housing 7701 to the wall with a magnet or the like. It can be conveniently used in a variety of situations.

[0307] FIG. 19(I) shows an example of a wristwatch-type portable information terminal. The device has a keyboard 7801, a display unit 7001, an input / output terminal 7802, an operation button 7803, and the like. The handheld terminal 7801 functions as a housing. The battery 7805 may be mounted on the display unit 70. It may be arranged overlapping with band 01 or band 7801, etc.

[0308] The band 7801, the display portion 7001, and the battery 7805 are flexible. Therefore, it is easy to bend the portable information terminal 7800 into a desired shape.

[0309] The operation button 7803 is used to set the time, turn the power on and off, and turn wireless communication on and off. It has various functions such as auto-start, silent mode activation and deactivation, power saving mode activation and deactivation, etc. For example, the operating system built into the portable information terminal 7800 can be Depending on the system, the functions of the operation buttons 7803 can be freely set.

[0310] In addition, by touching an icon 7804 displayed on the display unit 7001 with a finger or the like, the application You can launch the application.

[0311] The portable information terminal 7800 can also perform short-distance wireless communication in accordance with a communication standard. For example, by communicating with a wireless headset, You can also make calls using Lee.

[0312] The portable information terminal 7800 may also have an input / output terminal 7802. If the device has 802, it can directly exchange data with other information terminals via a connector. Charging can also be performed via the input / output terminal 7802. The charging operation of the mobile information terminal shown in the example is performed by non-contact power transmission without using input / output terminals. You may go.

[0313] FIG. 20(A) shows the exterior of the automobile 7900. FIG. 20(B) shows the driver's seat of the automobile 7900. The automobile 7900 includes a body 7901, wheels 7902, a windshield 7903, It has lights 7904, fog lights 7905, etc.

[0314] The display device of one embodiment of the present invention can be used for a display portion of an automobile 7900, for example. For example, the display units 7910 to 7917 in FIG. 20B may be used in conjunction with display devices of one embodiment of the present invention. A location can be provided.

[0315] The display portion 7910 and the display portion 7911 are provided on a windshield of the automobile. In one embodiment, an electrode of a display device is formed using a light-transmitting conductive material. Therefore, it is possible to provide a so-called see-through display device, which allows the opposite side to be seen through. If the display device is in a see-through state, it will not obstruct the view when driving a car 7900. Therefore, the display device of one embodiment of the present invention is installed on the windshield of the automobile 7900. In addition, when a transistor or the like is provided in the display device, an organic semiconductor Transistors using light-transmitting materials, such as organic transistors or transistors using oxide semiconductors, It is preferable to use a transistor having the following structure.

[0316] The display unit 7912 is provided on the pillar. The display unit 7913 is provided on the dashboard. For example, an image from an imaging unit provided on the vehicle body is displayed on the display unit 7912. By doing so, it is possible to compensate for the visibility obstructed by the pillar. 13 can complement the view obstructed by the dashboard, and the display unit 7914, It can complement the view blocked by the door. By projecting images from the inside, blind spots can be filled and safety can be improved. By projecting images that complement the invisible parts, safety checks can be performed more naturally and without discomfort. It is possible to do so.

[0317] The display unit 7917 is provided on the handle. 6, or display 7917 displays navigation information, speedometer, tachometer, It can provide various information such as distance traveled, fuel amount, gear status, air conditioning settings, and more. In addition, the display items and layout displayed on the display can be customized to suit the user's preferences. The above information can be displayed on the display units 7910 to 7914. can also be displayed.

[0318] Note that the display portions 7910 to 7917 can also be used as lighting devices.

[0319] The display portion to which the display device of one embodiment of the present invention is applied may be flat. The display device of one embodiment may have a configuration that does not have a curved surface or flexibility.

[0320] Figure 20(C) and (D) show the digital signage. The digital signage includes a housing 8000, a display unit 8001, and a screen. It also has a speaker 8003, etc., and an LED lamp, operation keys (power switch, or operation It may have a variety of functions, including a switch, connection terminals, various sensors, a microphone, etc.

[0321] Figure 20(D) shows a digital signage attached to a cylindrical pillar.

[0322] The larger the display section 8001, the more information can be displayed at once. The wider the display part 8001 is, the more easily it is noticed by people, and for example, the more effective the advertisement is. can.

[0323] By applying a touch panel to the display unit 8001, images or videos can be displayed on the display unit 8001. It is not only a display but also allows users to operate it intuitively, which is desirable. Or when used to provide information such as traffic information, intuitive operation is required. This can improve usability.

[0324] The portable game machine shown in FIG. 20E includes a housing 8101, a housing 8102, a display portion 8103, and a display unit 8104. , a display unit 8104, a microphone 8105, a speaker 8106, operation keys 8107, It has Tyrus 8108 etc.

[0325] The portable game machine shown in FIG. 20(E) has two display units (display unit 8103 and display unit 810 Note that the number of display units included in the electronic device of one embodiment of the present invention is limited to two. If an electronic device has multiple display units, at least one At least one display portion may include the display device of one embodiment of the present invention.

[0326] FIG. 20F shows a notebook personal computer, which includes a housing 8111 and a display unit 811 2, a keyboard 8113, a pointing device 8114, etc.

[0327] The display device of one embodiment of the present invention can be applied to the display portion 8112.

[0328] FIG. 21(A) shows the appearance of the camera 8400 with the viewfinder 8500 attached. show.

[0329] The camera 8400 includes a housing 8401, a display unit 8402, an operation button 8403, a shutter The camera 8400 has a button 8404 and the like. The camera 8400 also has a detachable lens 8406. It is attached.

[0330] Here, the camera 8400 is a camera in which the lens 8406 is removed from the housing 8401 and replaced. However, the lens 8406 and the housing may be integrated.

[0331] The camera 8400 can capture an image by pressing the shutter button 8404. The display portion 8402 also functions as a touch panel. It is also possible to take an image by

[0332] The housing 8401 of the camera 8400 has a mount with electrodes, and a viewfinder 850 In addition to the 0, strobe devices etc. can also be connected.

[0333] The finder 8500 includes a housing 8501, a display unit 8502, a button 8503, and the like. .

[0334] The housing 8501 has a mount that engages with the mount of the camera 8400, The mount can be attached to the camera 8400. The image received from the camera 8400 through the electrode is displayed on the display unit 8502. It can be done.

[0335] The button 8503 functions as a power button. The 8502 display can be switched on and off.

[0336] The display unit 8402 of the camera 8400 and the display unit 8502 of the finder 8500 are The display device according to one embodiment of the present invention can be applied.

[0337] In FIG. 21(A), the camera 8400 and the finder 8500 are separate electronic devices. However, these are configured to be detachable. The camera may also have a built-in viewfinder with a similar display device.

[0338] FIG. 21B shows the appearance of the head mounted display 8200.

[0339] The head-mounted display 8200 includes a mounting part 8201, a lens 8202, and a main body 82 8203, a display unit 8204, a cable 8205, etc. It has a built-in 8206 battery.

[0340] A cable 8205 supplies power from a battery 8206 to the main body 8203. 03 is equipped with a wireless receiver and the like, and image information such as received image data is displayed on a display unit 8204. In addition, the camera installed in the main body 8203 can record the movements of the user's eyeballs and eyelids. By capturing the user's viewpoint and calculating the coordinates of the user's viewpoint based on that information, It can be used as an input unit.

[0341] Furthermore, the wearing unit 8201 may be provided with a plurality of electrodes at positions that come into contact with the user. The main body 8203 detects the current flowing through the electrodes in accordance with the movement of the user's eyeballs, The device may have a function to recognize the user's point of view. By doing so, the attachment unit 820 may have a function of monitoring the pulse of the user. The sensor 1 may have various sensors such as a temperature sensor, a pressure sensor, an acceleration sensor, etc. The device may have a function to display the user's biological information on the display unit 8204. The image displayed on the display unit 8204 is changed according to the movement of the part. Good too.

[0342] The display device of one embodiment of the present invention can be applied to the display portion 8204.

[0343] 21(C) and (D) show the appearance of the head mounted display 8300. .

[0344] The head-mounted display 8300 includes a housing 8301, two display units 8302, and an operation unit. It has a button 8303 and a band-like fastener 8304 .

[0345] The head mounted display 8300 is the same as the head mounted display 8200. In addition to the functions it has, it also has two displays.

[0346] By having two displays 8302, the user can see one display per eye. This allows for high-resolution images to be displayed even when using parallax for 3D display. The display portion 8302 can display an image. This keeps the distance from the user's eyes to the display surface constant. This allows users to see more natural images. Even if the image changes depending on the viewing angle, the image is displayed in the normal direction to the display surface. Since the user's eyes are positioned, the effect can be virtually ignored, resulting in a more realistic look. It is possible to display images with

[0347] The operation button 8303 has a function such as a power button. The display may have a button.

[0348] As shown in FIG. 21(E), a lens is provided between the display unit 8302 and the user's eyes. The lens 8305 allows the user to magnify the display portion 8302. This increases the sense of realism, as shown in Figure 21(E). , and may have a dial 8306 that changes the position of the lens for diopter adjustment.

[0349] The display device of one embodiment of the present invention can be applied to the display portion 8302. Such a display device has extremely high definition, so it uses a lens 8305 as shown in Figure 21(E). Even when enlarged, the pixels are not visible to the user, providing a more realistic image. It is possible.

[0350] 22A to 22C show an example in which one display portion 8302 is provided. By adopting such a configuration, the number of parts can be reduced.

[0351] The display unit 8302 has two areas, one for the right eye and one for the left eye, each of which has a different image. Images can be displayed side by side, allowing for stereoscopic images to be displayed using binocular parallax. It is possible.

[0352] In addition, even if a single image that can be viewed by both eyes is displayed across the entire area of ​​the display unit 8302, This makes it possible to display a panoramic image across both ends of the field of view, The sense of realism increases.

[0353] 22C, a lens 8305 may be provided. Two images may be displayed side by side, or one image may be displayed on the display portion 8302 and The same image may be viewed with both eyes via the lens 8305.

[0354] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. [Example]

[0355] Regarding the display device of one embodiment of the present invention, calculations were performed on the time required for charging and discharging each wiring. Figure 26(A) is a block diagram of the display device used in the calculation. FIG. 1 is a circuit diagram of a pixel corresponding to the top view produced.

[0356] The block diagram of the display device shown in FIG. 26(A) is a 65-inch 7680×4320×R The so-called 8K panel has pixels consisting of sub-pixels arranged in GBW (red, green, blue, white) stripes. The scanning line driver circuits (Gate Driver) located on both sides are On-array (GOA) and sends scanning signals to pixels (PIX) from both scanning line driving circuits. The signal line driver circuit (Source Driver) is external (Ex ternal).

[0357] FIG. 26(B) is a circuit diagram of the pixel (PIX) shown in FIG. 26(A). The circuit diagram shown in FIG. 7(A) is obtained by changing the arrangement of the capacitance element C2 in the circuit diagram shown in FIG. This corresponds to a modified configuration.

[0358] The configuration shown in FIG. 26B is similar to that shown in FIG. 7A in that the first gate is connected to the transistor M4. The first gate electrode and the second gate electrode are not connected to each other. Compared with the case where the gate electrode is connected, the gate capacitance between the scanning line GL and the transistor is It may only be formed between the gate electrode.

[0359] Figure 27 is a top view of the pixel (PIX) corresponding to Figure 26(B). The figure shows four sub-pixels of RGBW. The same symbols are used for the components corresponding to the circuit diagram. The scanning lines and signals are arranged in the same order using the configurations shown in FIGS. 26(A), 26(B), and 27. We estimated the time required for charging and discharging each wiring, such as the wires. The various calculations for this purpose are performed using the software "SmartSpice" from Silvaco. The pixel size is 188 μm × 188 μm, and the channel length of the transistor M4 is L / The channel width (W) was set to 4 μm / 4 μm, and the L / W of transistor M5 was set to 6 μm / 6 μm. .

[0360] The calculation results are shown in Table 1. In Table 1, "Gate fall time" is the scanning The time it takes for the signal on the line to fall, "Source line charge time" "(>95%)" is the time it takes to charge the signal line to 95%, and "Total" is the sum of the two above. The total time, "One horizontal period" indicates one horizontal scanning period. is doing.

[0361] [Table 1]

[0362] As shown in Table 1, the charge and discharge times for the scanning and signal lines are all within one horizontal scanning period. Therefore, in a display device to which one embodiment of the present invention is applied, a transistor connected to a scan line It was found that this is suitable for 8K panels because it reduces the gate capacitance of the gate. [Explanation of symbols]

[0363] GL scanline SL signal line V0 wiring ANODE current supply line M1 transistor M2 transistor M3 transistor C1 Capacitor element EL light-emitting element CATHODE common wiring 100 transistors 102 Circuit Board 104 Insulating layer 106 Conductive layer 108 Oxide semiconductor layer 110 Insulating layer 112 Oxide semiconductor layer 116 Insulating Layer 108i Channel Area 108s Source Area 108d Drain region 141a opening 141b opening 120a Conductive layer 120b conductive layer 151 Conductive layer 152 Conductive layer 153 Insulating Layer 161 Oxide semiconductor layer 162 Oxide semiconductor layer 163 Oxide semiconductor layer 164 Insulating Layer 171 Oxide semiconductor layer 172 Oxide semiconductor layer 173 Oxide semiconductor layer 174 Insulating Layer 181 Conductive layer 182 Conductive layer 183 Conductive Layer 184 Conductive Layer 185 Conductive Layer 186 Insulating Layer 187 Insulating Layer 190 Opening 191 Conductive layer 192 Conductive Layer 193 Insulating Layer 198 Light-emitting layer 199 Partition layer 10 Display device 11 Pixel section 12 Scanning line driving circuit 13 Signal line driver circuit 15 Terminal section 16a Wiring 16b Wiring 22 areas 24 areas M4 transistor M5 transistor M6 transistor M7 transistor M8 transistor M9 transistor M10 transistor M11 transistor C2 Capacitor element C3 Capacitor element C4 Capacitor element C5 Capacitor element GL1 scan line GL2 scan line GL3 scanline GL4 scanline V1 wiring V2 wiring 201 Substrate 202 Substrate 211 Insulating layer 212 Insulating layer 213 Insulating Layer 214 Insulating layer 215 Spacer 216 Insulating Layer 217 Insulating Layer 218 Insulating Layer 220 Adhesive layer 221 Insulating layer 222 EL layer 223 Electrode 224 Optical adjustment layer 225 pixel electrode 230a Structure 230b Structure 231 Light blocking layer 232 Colored layer 242 FPC 243 Connection Layer 250 space 251 transistors 252 transistors 253 Capacitor 254 Light-emitting element 255 transistors 260 Encapsulating material 261 Adhesive layer 262 Adhesive layer 271 Semiconductor Layer 272 Conductive Layer 273 Conductive Layer 274 Conductive Layer 275 Conductive Layer 276 Insulating Layer 291 Conductive Layer 292 Conductive Layer 293 Conductive Layer 294 Insulating Layer 295 Adhesive layer 296 PCB 297 FPC 298 Connection Layer 299 Terminal section 301 Fabricated substrate 303 Peeling layer 305 Peeling layer 307 Adhesive layer 321 Fabrication substrate 323 Peeling layer 325 Peeling layer 331 Substrate 333 Adhesive layer 341 Circuit Board 343 Adhesive layer 351 areas 7000 Display 7001 Display section 7100 Mobile Phone 7101 Housing 7103 Operation button 7104 External connection port 7105 Speaker 7106 Microphone 7107 Camera 7110 Mobile phone 7200 Personal Digital Assistant 7201 Case 7202 Operation button 7203 Information 7210 Mobile Information Terminal 7300 Television equipment 7301 Housing 7303 Stand 7311 Remote control device 7400 Lighting Equipment 7401 Daibu 7403 Operation switch 7411 Light-emitting part 7500 Mobile Information Terminal 7501 Case 7502 Materials 7503 Operation button 7600 Mobile Information Terminal 7601 Case 7602 Hinge 7650 Mobile Information Terminal 7651 Hidden part 7700 Personal Digital Assistant 7701 Housing 7703a Button 7703b Button 7704a Speaker 7704b Speaker 7705 External connection port 7706 Mike 7709 Battery 7800 Mobile Information Terminal 7801 band 7802 Input / output terminal 7803 Operation button 7804 Icons 7805 Battery 7900 Automobiles 7901 Car body 7902 Wheel 7903 Windshield 7904 Light 7905 Fog lamp 7910 Display section 7911 Display section 7912 Display section 7913 Display section 7914 Display section 7915 Display section 7916 Display section 7917 Display section 8000 chassis 8001 Display section 8003 Speaker 8101 Housing 8102 Housing 8103 Display section 8104 Display section 8105 Microphone 8106 Speaker 8107 Operation key 8108 Stylus 8111 Housing 8112 Display section 8113 keyboard 8114 Pointing Device 8200 Head Mounted Display 8201 Mounting part 8202 Lens 8203 Main unit 8204 Display section 8205 Cable 8206 Battery 8300 Head Mounted Display 8301 Housing 8302 Display section 8303 Operation button 8304 Fixtures 8305 Lens 8306 Dial 8400 Camera 8401 Housing 8402 Display section 8403 Operation button 8404 Shutter button 8406 Lens 8500 Finder 8501 Housing 8502 Display section 8503 Button

Claims

1. a pixel portion including first to third transistors, a light-emitting element, a signal line, a current supply line, and a wiring; the first transistor has a function of controlling input of image data input to the signal line to a pixel, the second transistor has a function of controlling a current flowing between the current supply line and the light-emitting element in accordance with the image data; one of a source electrode and a drain electrode of the second transistor is electrically connected to the current supply line; the other of the source electrode and the drain electrode of the second transistor is electrically connected to a pixel electrode of the light-emitting element; one of a source electrode and a drain electrode of the third transistor is electrically connected to the wiring; a light-emitting device in which the other of the source electrode and the drain electrode of the third transistor is electrically connected to a pixel electrode of the light-emitting element, a first conductive film that functions as a first gate electrode of the second transistor; an oxide semiconductor film having a region disposed above the first conductive film and having a channel region of the second transistor; a second conductive film having a region located above the oxide semiconductor film and functioning as a second gate electrode of the second transistor; a third conductive film having a region located above the oxide semiconductor film and functioning as one of a source electrode and a drain electrode of the second transistor; a fourth conductive film having a region located above the oxide semiconductor film and functioning as the other of the source electrode and the drain electrode of the second transistor; a first region of the oxide semiconductor film overlapping with the fourth conductive film is larger than a second region of the oxide semiconductor film overlapping with the third conductive film in a plan view; an entire region of the oxide semiconductor film that overlaps with the second conductive film in a plan view overlaps with the first conductive film; the third conductive film does not overlap with the first conductive film in a plan view; the fourth conductive film overlaps with the first conductive film in a plan view. Light-emitting device.

2. a pixel portion including first to third transistors, a light-emitting element, a signal line, a current supply line, and a wiring; the first transistor has a function of controlling input of image data input to the signal line to a pixel, the second transistor has a function of controlling a current flowing between the current supply line and the light-emitting element in accordance with the image data; one of a source electrode and a drain electrode of the second transistor is electrically connected to the current supply line; the other of the source electrode and the drain electrode of the second transistor is electrically connected to a pixel electrode of the light-emitting element; one of a source electrode and a drain electrode of the third transistor is electrically connected to the wiring; a light-emitting device in which the other of the source electrode and the drain electrode of the third transistor is electrically connected to a pixel electrode of the light-emitting element, a first conductive film that functions as a first gate electrode of the second transistor; an oxide semiconductor film having a region disposed above the first conductive film and having a channel region of the second transistor; a second conductive film having a region located above the oxide semiconductor film and functioning as a second gate electrode of the second transistor; a third conductive film having a region located above the oxide semiconductor film and functioning as one of a source electrode and a drain electrode of the second transistor; a fourth conductive film having a region located above the oxide semiconductor film and functioning as the other of the source electrode and the drain electrode of the second transistor; a first region of the oxide semiconductor film overlapping with the fourth conductive film is larger than a second region of the oxide semiconductor film overlapping with the third conductive film in a plan view; an entire region of the oxide semiconductor film that overlaps with the second conductive film in a plan view overlaps with the first conductive film; the third conductive film does not overlap with the first conductive film in a plan view; the fourth conductive film overlaps with the first conductive film in a plan view; the fourth conductive film is electrically connected to the pixel electrode through an opening in an insulating film having a region disposed above the fourth conductive film; the opening overlaps with the first conductive film in a plan view. Light-emitting device.

3. a pixel portion including first to third transistors, a light-emitting element, a signal line, a current supply line, and a wiring; the first transistor has a function of controlling input of image data input to the signal line to a pixel, the second transistor has a function of controlling a current flowing between the current supply line and the light-emitting element in accordance with the image data; one of a source electrode and a drain electrode of the second transistor is electrically connected to the current supply line; the other of the source electrode and the drain electrode of the second transistor is electrically connected to a pixel electrode of the light-emitting element; one of a source electrode and a drain electrode of the third transistor is electrically connected to the wiring; a light-emitting device in which the other of the source electrode and the drain electrode of the third transistor is electrically connected to a pixel electrode of the light-emitting element, a first conductive film that functions as a first gate electrode of the second transistor; an oxide semiconductor film having a region disposed above the first conductive film and having a channel region of the second transistor; a second conductive film having a region located above the oxide semiconductor film and functioning as a second gate electrode of the second transistor; a third conductive film having a region located above the oxide semiconductor film and functioning as one of a source electrode and a drain electrode of the second transistor; a fourth conductive film having a region located above the oxide semiconductor film and functioning as the other of the source electrode and the drain electrode of the second transistor; the fifth conductive film having a function as the current supply line is electrically connected to the third conductive film, a first region of the oxide semiconductor film overlapping with the fourth conductive film is larger than a second region of the oxide semiconductor film overlapping with the third conductive film in a plan view; an entire region of the oxide semiconductor film that overlaps with the second conductive film in a plan view overlaps with the first conductive film; the third conductive film does not overlap with the first conductive film in a plan view; the fourth conductive film overlaps with the first conductive film in a plan view. Light-emitting device.

4. a pixel portion including first to third transistors, a light-emitting element, a signal line, a current supply line, and a wiring; the first transistor has a function of controlling input of image data input to the signal line to a pixel, the second transistor has a function of controlling a current flowing between the current supply line and the light-emitting element in accordance with the image data; one of a source electrode and a drain electrode of the second transistor is electrically connected to the current supply line; the other of the source electrode and the drain electrode of the second transistor is electrically connected to a pixel electrode of the light-emitting element; one of a source electrode and a drain electrode of the third transistor is electrically connected to the wiring; a light-emitting device in which the other of the source electrode and the drain electrode of the third transistor is electrically connected to a pixel electrode of the light-emitting element, a first conductive film that functions as a first gate electrode of the second transistor; an oxide semiconductor film having a region disposed above the first conductive film and having a channel region of the second transistor; a second conductive film having a region located above the oxide semiconductor film and functioning as a second gate electrode of the second transistor; a third conductive film having a region located above the oxide semiconductor film and functioning as one of a source electrode and a drain electrode of the second transistor; a fourth conductive film having a region located above the oxide semiconductor film and functioning as the other of the source electrode and the drain electrode of the second transistor; the fifth conductive film having a function as the current supply line is electrically connected to the third conductive film, a first region of the oxide semiconductor film overlapping with the fourth conductive film is larger than a second region of the oxide semiconductor film overlapping with the third conductive film in a plan view; an entire region of the oxide semiconductor film that overlaps with the second conductive film in a plan view overlaps with the first conductive film; the third conductive film does not overlap with the first conductive film in a plan view; the fourth conductive film overlaps with the first conductive film in a plan view; the fourth conductive film is electrically connected to the pixel electrode through an opening in an insulating film having a region disposed above the fourth conductive film; the opening overlaps with the first conductive film in a plan view. Light-emitting device.

5. In any one of claims 1 to 4, each of the first conductive film to the fourth conductive film includes a first film containing titanium and a second film having a region disposed above the first film and containing copper; Light-emitting device.

Images