Method for fabricating chamber component

Abstract

To provide method and device of fabricating a chamber component with a coating comprising a yttrium containing material with desired film properties.SOLUTION: A method of fabricating a coating material includes: providing a base structure comprising an aluminum containing material; forming a coating layer that includes a yttrium containing material on the base structure; and thermally treating the coating layer to form a treated coating layer.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] TECHNICAL FIELD

[0001] Examples of the present disclosure relate generally to methods and apparatus for plasma processing, and more particularly to methods and apparatus for plasma processing using components with enhanced film properties. [Background technology]

[0002]

[0002] The fabrication of microelectronic or integrated circuit devices typically involves complex processing sequences requiring hundreds of individual steps performed on semiconductor, dielectric, and conductive substrates. Examples of these processing steps include oxidation, diffusion, ion implantation, thin film deposition, cleaning, etching, and lithography. Plasma processing is often used for etching processes and processing chamber cleaning processes after thin film deposition processes. In chemical vapor deposition, reactive species are generated by applying a voltage to appropriate process gases, and the subsequent chemical reaction results in the formation of a thin film on the substrate. In plasma etching, a previously deposited film is exposed to reactive species in a plasma, often through a patterned mask layer formed in a previous lithography step. The reaction between the reactive species and the deposited film results in the removal or etching of the deposited film.

[0003]

[0003] When chamber parts or process kits are exposed to a plasma environment for extended periods of time, degradation of the chamber surfaces can occur due to reactions with plasma species. For example, existing process kits or chamber components are often made of aluminum-containing materials, such as aluminum oxide, aluminum alloys, aluminum oxynitride, or aluminum nitride. Halogen-containing gases, e.g., fluorine-containing or chlorine-containing gases, are used to etch various material layers during circuit fabrication. Aluminum-containing materials are susceptible to attack by fluorine species, resulting in Al deposition on the surfaces of the components. x F y O zThese etching by-products are believed to be formed during processing. These etching by-products can flake off as particles during processing, resulting in contamination and defects on the substrate during processing. Furthermore, some aluminum-containing parts appear to be prone to breakage, possibly as a result of mechanical stresses generated during machining and cyclic exposure to temperature cycling and plasma. In chemical vapor deposition processes, metal-halogen-containing compounds are often used as deposition precursors. These chemicals decompose to produce halogen gas species or molecules that can contaminate chamber surfaces, especially undesirable Al x F y O z It often strongly corrodes aluminum parts forming by-products. The cleanliness of the chamber surface is one of the important factors that can affect the deposition performance. The cleanliness of the chamber surface also depends on the roughness of the chamber surface. It is believed that the rougher the surface of the chamber components, the more likely they are to generate particles during the deposition process.

[0004]

[0004] Thus, there is a need for chamber components having reliable surface materials for plasma applications, and improved processes for manufacturing such components. Summary of the Invention

[0005]

[0005] One example of the present disclosure provides a method for manufacturing a chamber component having a coating including an yttrium-containing material with desired film properties. In one example, the method for manufacturing the coating material includes providing a base structure including an aluminum-containing material. The method further includes forming a coating layer including the yttrium-containing material on the base structure. The method also includes heat-treating the coating layer to form a treated coating layer.

[0006] In another example, a method for producing a coating material includes providing a base structure including an aluminum-containing material. A coating layer is formed. The coating layer includes a yttrium-containing material on the base structure. The method further includes laser treating the coating layer to form a treated coating layer.

[0007] In yet another example, a chamber component includes a laser-treated coating layer. The laser-treated coating layer includes a yttrium-containing material on the chamber component. The laser-treated coating layer has a yttrium content of 4.0 g / cm. 3 It has a film density of ultra high.

[0008]

[0008] So that the above-mentioned features of the present disclosure may be understood in detail, a more particular description of the present disclosure briefly summarized above will be had by reference to examples, some of which are illustrated in the accompanying drawings. It should be noted, however, that the present disclosure may admit of other equally effective examples, and therefore, the accompanying drawings depict only typical examples of the present disclosure, and therefore should not be considered as limiting the scope of the present disclosure. [Brief explanation of the drawings]

[0009] [Figure 1] A processing tool that can be utilized to form a coating on a chamber component. [Figure 2]

[0010] 2 is a schematic diagram of a plasma reactor having at least one chamber component made from the processing tool of FIG. 1; [Figure 3]

[0011] 2 is a method for producing a coating on a chamber component utilizing the tool of FIG. 1. [Figures 4A-4C]

[0012] 1 is a cross-sectional schematic view of a coating formed on a chamber component. [Figure 5]

[0013] 4 shows a bottom view of a chamber component used in the plasma etching reactor of FIG. 2 manufactured by the method of FIG. 3. DETAILED DESCRIPTION OF THE INVENTION

[0010]

[0014] For ease of understanding, wherever possible, identical reference numerals have been used to designate identical elements common to the figures. It is believed that elements and features of one example may be beneficially incorporated in other examples without further description.

[0011]

[0015] However, it should be noted that the present disclosure may allow for other equally effective examples, and therefore the accompanying drawings depict only illustrative examples of the present disclosure and should not be considered as limiting the scope of the present disclosure.

[0012]

[0016] The present disclosure provides methods and apparatus for manufacturing plasma processing chamber components with coatings having improved characteristics, such as enhanced chemical or plasma resistance. In one example, the coating material may include a yttrium-containing material having enhanced film properties. Such enhanced characteristics are obtained when at least a portion of the coating material is formed on the component, and then the coating layer disposed on the component is subjected to a high-temperature treatment process. In one example, the coating may be formed on the component followed by a high-temperature treatment process, such as a laser treatment process or other energy treatment process.

[0013]

[0017] 1 illustrates a processing tool 100 that may be utilized to process a coating material formed on a substrate surface, such as a component utilized in a plasma processing chamber. The processing tool 100 may be a laser energy device that directs laser energy at a coating material formed on a substrate. Alternatively, the processing tool 100 may be any suitable energy providing device that can provide thermal energy, beam energy, light energy, or other suitable energy to alter the bonding structure or film properties of a coating material disposed on a substrate.

[0014]

[0018] The processing tool 100 includes a housing 150 having a laser module 152, a stage 112 configured to support a substrate, such as substrate 106, and a translation mechanism 124 configured to control the movement of the stage 112. An actuator system 108 is also coupled to the stage 112 to assist in the control and movement of the stage 112. It should be noted that the substrate 106 in this case is a component that is subsequently utilized as a chamber component in a plasma reactor.

[0015]

[0019] The laser module 152 includes a laser radiation source 101, at least one lens 102, and a light focusing module 104 disposed on the stage 112. In one example, the laser radiation source 101 can be a light source made from Nd:YAG, Nd:YVO4, a crystal disk, a diode-pumped fiber, or other light source capable of providing and emitting pulsed or continuous radiation at wavelengths between about 187 nm and about 10,000 nm, e.g., between about 248 nm and 2,100 nm. In another example, the laser radiation source 101 can include multiple laser diodes, each capable of producing uniform and spatially coherent light at the same wavelength. In yet another example, the cumulative laser diode power ranges from about 2 watts to 200 watts.

[0016]

[0020] The focusing optical module 104 uses at least one lens 102 to convert the radiation emitted by the laser radiation source 101 into a line, spot, or other suitable beam configuration of radiation 110 that is directed toward a coating material (not shown) disposed on a substrate 106. The radiation 110 is selectively applied to the surface of the coating material to provide a dose of laser energy to discrete, predetermined areas of the coating material. In one example, the radiation 110 can be selectively applied to the surface of the coating material as many times as necessary until a desired change in a film property present in the coating material, such as local stress or film density, is achieved. In another configuration, the laser is reflected off a digital micromirror device, which then projects the laser pattern onto the substrate (either magnified to process the entire substrate or in a small field scanned across the substrate), and a treatment dose map can be created as needed.

[0017]

[0021] Lens 102 may be any suitable lens or series of lenses capable of focusing radiation into a line or spot. In one example, lens 102 is a cylindrical lens. Alternatively, lens 102 may be one or more concave lenses, convex lenses, flat mirrors, concave mirrors, convex mirrors, refractive lenses, diffractive lenses, Fresnel lenses, gradient index lenses, etc.

[0018]

[0022] The detector 116 is disposed within the laser module 152 above the stage 112. In one example, the detector 116 may be an optical detector that can provide a light source 120 with different wavelengths to inspect and detect film properties of the coating material and / or substrate 106 positioned on the stage 112. The light source 120 reflects off the substrate 106 or the coating material disposed thereon, forming a reflected light beam 122 that is returned to the detector 116 for in-time feedback control. In one example, the detector 116 and the light source 120 may form part of an optical microscope (OM) that can be used to observe individual device die patterns or features formed in the coating material on the substrate 106. In another example, the detector 116 may be a metrology tool or sensor that can detect local thickness, stress, refractive index (n & k), surface roughness, film density, or resistivity on the material layer and / or substrate 106 prior to performing a laser energy process. In yet another example, the detector 116 may include a camera capable of capturing images of the coating material and / or substrate 106 to analyze the coating material and / or substrate 106 based on image color contrast, image brightness contrast, image comparison, etc. In another example, the detector 116 may be any suitable detector capable of detecting different film properties or characteristics of the substrate or film layer deposited on the substrate, such as stress, surface roughness, film density, etc.

[0019]

[0023] The detector 116 may linearly scan the substrate surface across a linear region of the coating material. The detector 116 may assist in identifying the coordinates, alignment, or orientation of the substrate 106. The detector 116 may scan the substrate 106 as it advances in the X direction 170. Similarly, the detector 116 may scan the substrate 106 as it moves in the Y direction 180, such as when the translation mechanism 124 moves the stage 112. The detector 116 may be coupled to a controller 190 to control movement and data transfer from the detector 116 or other detectors or computing systems to the laser module 152.

[0020]

[0024] The controller 190 may be a high-speed computer configured to control the detector 116 and / or the laser module 152 to perform the light detection process and / or the laser energy treatment process. In one example, the light detection process is performed by the detector 116 prior to the laser energy treatment process, and therefore, the process parameters set in the laser energy treatment recipe for performing the laser energy process may be based on measurement data received from the light detection process. In one example, the controller 190 may be further coupled to a data computing system (not shown) to obtain data or calculated algorithms from the data computing system to assist in determining an appropriate recipe for performing the laser energy treatment process on the coating material on the substrate 106.

[0021]

[0025] In one example, the translation mechanism 124 may be configured to translate the stage 112 and the radiation 110 relative to one another. The translation mechanism 124 may be configured to move the stage 112 in positive and negative X-directions 170 and positive and negative Y-directions 180. In one example, the translation mechanism 124 coupled to the stage 112 is adapted to move the stage 112 relative to the laser module 152 and / or the detector 116. In another example, the translation mechanism 124 is coupled to the laser module 152 and / or the focused light module and / or the detector 116 to move the laser radiation source 101, the focused light module 104, and / or the detector 116 to move the energy beam relative to the substrate 106 disposed on the stage 112. In yet another example, the translation mechanism 124 moves the laser radiation source 101 and / or the focused light module 104, the detector 116, and the stage 112. Any suitable translation mechanism may be used, such as a conveyor system, a rack and pinion system, or x / y actuators, multiple robots, or other suitable mechanical or electromechanical mechanisms for use in translation mechanism 124. Alternatively, stage 112 may be configured to be stationary, while multiple galvanometric heads (not shown) may be positioned around the substrate edge, as needed, to direct radiation from laser radiation source 101 to the substrate.

[0022]

[0026] The translation mechanism 124 may be coupled to a controller to control the scan speed at which the stage 112 and the laser radiation source 101 move relative to one another. In one example, the laser radiation source 101 is an optical radiation source. The controller 190 may receive data from the detector 116 or from a data computing system to generate an optimized laser energy strategy that is used to control the laser module 152 to perform an optimized laser dose patterning process. As the stage 112 and radiation 110 and / or laser radiation source 101 move relative to one another, energy is delivered to discrete, desired areas of the coating material. In one example, the translation mechanism 124 moves at a constant speed. In another example, the translation of the stage 112 and the line movement of the radiation 110 follow different paths controlled by the controller 190.

[0023]

[0027] 2 is a cross-sectional view of a processing chamber 232 suitable for performing a plasma deposition process (e.g., plasma-enhanced CVD or metal organic CVD), some of which (e.g., chamber components) are utilized during the process. The processing chamber 232 may be an appropriately adapted CENTURA®, PRODUCER® SE, or PRODUCER® GT, or PRODUCER® XP processing system available from Applied Materials, Inc. of Santa Clara, Calif. It is contemplated that other processing systems, including those manufactured by other manufacturers, may benefit from the examples described herein.

[0024]

[0028] The processing chamber 232 includes a chamber body 251. The chamber body 251 includes a lid 225, a sidewall 201, and a bottom wall 222 that define an interior space 226.

[0025]

[0029] A support pedestal 250 is provided within the interior space 226 of the chamber body 251. The pedestal 250 may be fabricated from aluminum, ceramic, aluminum nitride, and other suitable materials. In one example, the pedestal 250 is fabricated from a ceramic material such as aluminum nitride, which is suitable for use in high-temperature environments, such as plasma processing environments, without causing thermal damage to the pedestal 250. The pedestal 250 can be moved in the Y direction 180 within the chamber body 251 using a lift mechanism (not shown). The pedestal 250 is supported by a shaft 260. The shaft 260 has a hollow center through which wiring passes. The wiring connects circuits to electrodes disposed within the pedestal 250.

[0026]

[0030] The pedestal 250 may include an embedded heater element 270 suitable for controlling the temperature of the substrate 290 supported by the pedestal 250. In one example, the pedestal 250 may be resistively heated by applying a current from the power supply 206 to the heater element 270. In one example, the heater element 270 may be made from a nickel-chromium wire encapsulated in a nickel-iron-chromium alloy (e.g., INCOLOY®) sheath tube. The current provided by the power supply 206 is adjusted by the controller 210 to control the heat generated by the heater element 270 and thereby maintain the substrate 290 and the pedestal 250 at a substantially constant temperature in any suitable temperature range during film deposition. In another example, the pedestal 250 may be maintained at room temperature as needed. In yet another example, the pedestal 250 may also include a chiller (not shown) to cool the pedestal 250 below room temperature as needed. The current supplied can be adjusted to selectively control the temperature of the pedestal 250 between about 100°C and about 700°C.

[0027]

[0031] A temperature sensor 272, such as a thermocouple, may be embedded in the support pedestal 250 to monitor the temperature of the pedestal 250 in a conventional manner. The measured temperature is used by the controller 210 to control the power supplied to the heater element 270 to maintain the substrate at a desired temperature.

[0028]

[0032] The pedestal 250 may include a plurality of lift pins (not shown) disposed therethrough and configured to lift the substrate 290 from the pedestal 250 and facilitate exchange of the substrate 290 with a robot (not shown) in a conventional manner.

[0029]

[0033] The pedestal 250 includes at least one electrode 292 for holding the substrate 290 on the pedestal 250. The electrode 292 is driven by a chuck power supply 208 and generates an electrostatic force that holds the substrate 290 to the pedestal surface, as is known in the art. Alternatively, the substrate 290 may be held to the pedestal 250 by a clamp, vacuum, or gravity.

[0030]

[0034] In one example, the pedestal 250 is configured as a cathode with an electrode 292 embedded therein that is coupled to at least one RF bias power supply, shown in FIG. 2 as two RF bias power supplies 284 and 286. However, the example shown in FIG. 2 shows two RF bias power supplies 284 and 286. It should be noted that the number of RF bias power supplies 284 and 286 can be any number as desired. The RF bias power supplies 284 and 286 are coupled between the electrode 292 disposed on the pedestal 250 and another electrode, such as the gas distribution plate 242 or lid 225 of the processing chamber 232. The RF bias power supplies 284 and 286 excite and sustain a plasma discharge formed from gases disposed within the processing region of the processing chamber 232.

[0031] In the example shown in FIG. 2 , the dual RF bias power supplies 284, 286 are coupled to an electrode 292 disposed on the pedestal 250 through a matching network 204. Signals generated by the RF bias power supplies 284, 286 are delivered to the pedestal 250 through a single feed and through the matching network 204 to ionize the gas mixture provided in the processing chamber 232, thereby providing the ion energy necessary to perform deposition or other plasma-enhanced processes. The RF bias power supplies 284, 286 are generally capable of generating RF signals having frequencies between about 50 kHz and about 200 MHz and powers between about 0 watts and about 5000 watts. The chuck power supply 208 and the matching network 204 are coupled to the upper electrode 254. The upper electrode 254 is configured to electrostatically chuck a substrate 290 to the top surface 292 of the pedestal 250.

[0032]

[0036] The vacuum pump 202 is connected to a port formed in the bottom wall 222 of the chamber body 251. The vacuum pump 202 is used to maintain a desired gas pressure within the chamber body 251. The vacuum pump 202 also evacuates post-processing gases and process by-products from the chamber body 251.

[0033]

[0037] The processing chamber 232 includes one or more gas delivery passages 244 connected through the lid 225 of the processing chamber 232. The gas delivery passages 244 and vacuum pumps 202 are positioned at opposite ends of the processing chamber 232 to induce laminar flow within the interior space 226 and minimize particle contamination.

[0034] The gas delivery passages 244 are connected to the gas panel 293 through a remote plasma source (RPS) 248 to provide the gas mixture into the interior space 226. In one example, the gas mixture supplied through the gas delivery passages 244 can be further supplied through a gas distribution plate 242 disposed below the gas delivery passages 244. In one example, the gas distribution plate 242 having a plurality of apertures 243 is coupled to the lid 225 of the chamber body 251 above the pedestal 250. The apertures 243 in the gas distribution plate 242 are utilized to introduce process gases from the gas panel 293 into the chamber body 251. The apertures 243 can have different sizes, numbers, distributions, shapes, designs, and diameters to facilitate the flow of various process gases for different process requirements. A plasma is formed from the process gas mixture exiting the gas distribution plate 242 to enhance thermal decomposition of the process gases, resulting in the deposition of materials on the surface 291 of the substrate 290.

[0035]

[0039] The gas distribution plate 242 and the pedestal 250 may form a pair of spaced-apart electrodes in the interior space 226. One or more RF sources 247 provide a bias potential to the gas distribution plate 242 via a matching network 245 to facilitate plasma generation between the gas distribution plate 242 and the pedestal 250. Alternatively, the RF source 247 and the matching network 245 may be coupled to the gas distribution plate 242, the pedestal 250, or both. In one example, the RF source 247 and the matching network 245 may be coupled to an antenna (not shown) located outside the chamber body 251. In one example, the RF source 247 may provide from about 10 watts to about 3000 watts at a frequency of from about 30 kHz to about 13.6 MHz. Alternatively, the RF source 247 may be a microwave generator that provides microwave power to the gas distribution plate 242 to facilitate plasma generation within the interior space 226.

[0036]

[0040] Examples of gases that may be supplied from the gas panel 293 include silicon-containing gases, fluorine-containing gases, oxygen-containing gases, hydrogen-containing gases, inert gases, and carrier gases. Suitable examples of reactive gases include SiH, SiH, SiF, SiHCl, SiH, and SiH. 10 , SiH 12 Suitable carrier gases include silicon-containing gases such as TEOS, TEOS, etc. Suitable carrier gases include nitrogen (N), argon (Ar), hydrogen (H), alkanes, alkenes, helium (He), oxygen (O), ozone (O), water vapor (H), etc.

[0037]

[0041] In one example, a remote plasma source (RPS) 248 may alternatively be coupled to the gas delivery passage 244 to assist in forming a plasma from gases supplied into the interior space 226 from the gas panel 293. The remote plasma source 248 provides a plasma formed from the gas mixture provided by the gas panel 293 to the processing chamber 232.

[0038]

[0042] The controller 210 includes a central processing unit (CPU) 212, memory 216, and support circuits 214, which are utilized to control the processing sequence and regulate gas flow from the gas panel 293. The CPU 212 may be any form of general-purpose computer processor that may be used in an industrial setting. Software routines may be stored in the memory 216, such as random access memory, read-only memory, a floppy or hard disk drive, or other form of digital storage. The support circuits 214 are conventionally coupled to the CPU 212 and may include cache, clock circuits, input / output systems, power supplies, etc. Bidirectional communication between the controller 210 and various other components of the processing chamber 232 is handled via a number of signal cables collectively referred to as a signal bus 218, some of which are illustrated in FIG. 2.

[0039]

[0043] It should be noted that all of the above chamber components, such as the gas distribution plate 242 or the pedestal 250, may have a coating material produced by the methods described below to enhance surface protection and chemical / plasma resistance.

[0040]

[0044] FIG. 3 illustrates the deposition of a yttrium-containing material (yttrium oxide (Y2O3) or Y2O3 with a metal dopant such as Al or Zr) on a base structure, such as a component or portion of the process chamber 232. x O y F z 4A illustrates an example of a method 300 that can be used to fabricate a coating material containing aluminum. Suitable examples of yttrium-containing materials include yttrium oxide or fluorine yttrium oxide, and fluorine yttrium oxide with a metal dopant (AlYOF or ZrYOF). The base structure includes an aluminum-containing material. Method 300 begins in step 302 by providing a base structure, such as base structure 402 shown in FIG. 4A, to a spray coating chamber (not shown). In one example, base structure 402 can be a ceramic material, a metal-dielectric material, such as Al2O3, AlN, AlON, bulk yttrium, a suitable rare earth-containing material, or the like. In one example, base structure 402 is made of Al2O3, which allows for a coating structure to be formed thereon.

[0041]

[0045] In step 304, as shown in FIG. 4B, a spray coating deposition process is performed to form a coating layer 404 on the first surface 403 of the base structure 402. The coating layer 404 may be made of a yttrium-containing material (yttrium oxide (Y2O3) or Y2O3 with a metal dopant such as Al or Zr). x O y F z It should be noted that any suitable coating chamber, such as a liquid spray coating, gel spray coating, plasma spray coating, or other suitable deposition coating chamber, may be utilized to coat the yttria-containing coating layer 404 onto the base structure 402.

[0042]

[0046] In one example, a powder form of yttrium-containing material (yttrium oxide (Y2O3) or Y2O3 with a metal dopant such as Al or Zr) is used. x O y F z ) may be used as a starting material, and a slurry may be formed by adding other ingredients, such as water, a binder, and appropriate additives, which may be used to facilitate the manufacturing process of the coating layer 404. The slurry may then be sprayed onto the first surface 403 of the base structure 402 to form the coating layer 404. Plasma may be generated to assist in spraying the slurry evenly across the first surface 403 of the base structure 402 and to assist in coating the coating layer 404 on the base structure 402. In one example, the yttria powder may have an average particle size between about 15 μm and about 0.1 μm. Yttria powder with a smaller particle size may assist in providing a relatively smooth surface for the coating layer 404, such as less substrate roughness, if desired. In one example, the first coating layer is a plasma spray coating on the base structure 402.

[0043]

[0047] In step 306, after the coating layer 404 is formed, a high-temperature treatment (HTT) process is performed to form a treatment layer 406 on the second surface 405 of the coating layer 404, as shown in FIG. 4C. The high-temperature treatment (HTT) process may be performed in the processing tool 100 shown in FIG. 1. The high-temperature treatment (HTT) process treats the surface of the coating layer 404 to change the properties of the substrate surface. The bonding structure and film properties of the coating layer 404, when processed in step 304, result in a robust film structure (e.g., treatment layer 406) with a low defect density in the treatment layer 406. Furthermore, the high-temperature treatment (HTT) process may help remove contaminants from the surface of the coating layer 404, thereby providing a good contact interface and avoiding particle accumulation on the coating layer 404. Furthermore, the high-temperature treatment (HTT) process may also be performed to modify the morphology and / or surface roughness of the surface of the coating layer 404, optionally forming the treatment layer 406 with a relatively smooth surface compared to the coating layer 404 to improve adhesion of subsequently deposited layers formed thereon. In some examples, the high temperature treatment (HTT) process may or may not incorporate certain elements, such as oxygen or nitrogen, as needed to react with unsaturated, loose, or dangling bonds from the coating layer 404 to improve the bonding energy and bonding structure of the coating layer 404.

[0044]

[0048] In one example, a high temperature processing (HTT) process may be performed in step 306 with or without an ambient gas in a processing chamber such as the processing tool 100 shown in FIG.

[0045]

[0049] In one example, the high temperature treatment (HTT) process is performed by applying a series of laser pulses to discrete areas of the coating layer according to specific location requirements identified by the requirements of the high temperature treatment (HTT) process. The bursts of laser pulses can have a laser wavelength greater than 193 nm, for example, between about 248 nm and about 10,000 nm, for example, about 1,100 nm. Each pulse is focused on a predetermined area of ​​the coating layer 404 to be treated.

[0046]

[0050] In one example, the spot size of the laser pulse is controlled between about 10 μm and about 1000 μm. The spot size of the laser pulse can be configured to change the film properties at specific locations of the film layer with desired dimensions, features, patterns, and geometries.

[0047]

[0051] The laser pulses deliver approximately 1 microjoule per square centimeter (μJ / cm) at a frequency between approximately 1 kHz and approximately 20 MHz. 2 ) and about 2 microjoules per square centimeter (μJ / cm 2 ) The length of each laser pulse can be configured to have a duration of about 10 μsec to 10 femtoseconds. During the laser treatment process, the substructure temperature can be maintained between about 15 degrees Celsius and about 75 degrees Celsius.

[0048]

[0052] The laser pulse alters the local stress in the film layer without annealing or heat treating the coating layer 404 to form a treated layer 406 with a desired surface roughness. A single laser pulse may be used or multiple laser doses may be applied to the same substrate location. After a first substrate location is laser treated, a second substrate location is then treated by positioning the laser pulse (or substrate) and directing the pulse to the second location. The high temperature treatment (HTT) process requirement continues until a predetermined duration is reached.

[0049]

[0053] In some examples, during high temperature processing (HTT) processes, an ambient gas may be supplied to the housing 150 of the processing tool 100 so that some of the elements of the ambient gas may be processed or incorporated into the processing layer 406, as needed. In one example, the ambient gas may be an oxygen-containing gas such as O, N2O, N0, H2O2, H2O, or O3, a nitrogen-containing gas such as N2O, NH3, N0, N2, or an inert gas such as Ar and He.

[0050]

[0054] In some examples, the amount of ambient gas supplied into the enclosure 150 may be varied and / or adjusted to accommodate the depth / thickness of the elements being incorporated to form the treatment layer 406.

[0051]

[0055] The laser energy treatment process may alter, release, or eliminate local residual stresses in discrete regions of the coating layer 404 to locally change the in-plane strain in the film layer. In doing so, the alteration of the local stresses in the coating layer 404 during the high temperature treatment process may also provide a relatively planar surface for the resulting treated layer 406, reducing the surface roughness of the treated layer 406.

[0052]

[0056] After the treatment process in step 306, in step 308, a base structure having a coating material 450 (resulting from the treatment layer 406 converted from the coating layer 404) formed thereon is formed with desired film properties. In one example, the coating material 450 may have a surface roughness Ra of greater than 5 micrometers. The density of the coating material 450 is 4.0 g / cm 3 Over, for example, about 4.0 g / cm 3 and 5.2 g / cm 3 In one example, the yttrium-containing material of coating material 450 includes yttria. The yttria of coating material 450 may have a yttrium-to-oxide (Y:O) ratio of between about 1:1 and 2:1. Coating material 450 has a thickness of between about 0.5 μm and about 50 μm. Coating material 450 has a pore density of less than 2%.

[0053]

[0057] Because the coating material 450 formed on the base structure 402 has a relatively robust structure, when such coating material 450 is deposited on a chamber component in a processing chamber, such as the processing chamber 232 of Figure 2, the coating material 450 can maintain a good surface condition while being attacked by aggressive plasma species during a plasma process, thereby reducing the possibility of generating particles or contaminants from the chamber walls, substrate support, gas distribution plate, or other chamber components of the processing chamber 232.

[0054]

[0058] FIG. 5 shows a schematic bottom view of a gas distribution plate 242 that can be manufactured with a coating material 450 formed thereon according to an example of the present disclosure. The yttria-coated gas distribution plate 242 can be used in the processing chamber 232 or other plasma chambers, such as those for etching or deposition applications, among others. The gas distribution plate 242 is provided with a plurality of apertures 243 to allow process gases and / or plasma species to flow into the processing region of the processing chamber 232. The apertures 243 may be arranged in a regular pattern on the gas distribution plate 242, or may be arranged in different patterns to meet different gas distribution needs. In the example shown in FIG. 5, the coating material 450 is formed on the bottom surface of the gas distribution plate 242 (same as the gas distribution plate 242 shown in FIG. 2). The coating material 450 is coated on the surface of the gas distribution plate 242, which can protect the gas distribution plate 242 from attack by aggressive plasma species during plasma processing, thereby reducing the likelihood of generating particles or contaminants on the substrate 290 positioned in the processing chamber 232. Thus, product yield and cleanliness of the substrate 290 may be enhanced and maintained.

[0055]

[0059] Examples of the present disclosure can be used to produce coating materials containing yttria on chamber components for a variety of applications. These enhanced surface-coated chamber components are suitable for use in corrosive environments such as those encountered in plasma processes. Various plasma deposition and etching chambers can benefit from the teachings disclosed herein, including dielectric etch chambers such as the Enabler® etch chamber (which may be part of a semiconductor wafer processing system such as a CENTURA® system), dielectric deposition chambers such as the PRODUCER® or ENDURA® deposition chamber (which may be part of a semiconductor wafer processing system), eMax etch chambers, Producer etch chambers, and conductor etch chambers such as the AdvantEdge Metal and DPS Metal chambers, among others, all of which are available from Applied Materials, Inc. of Santa Clara, California. It is contemplated that other plasma reactors, including those from other manufacturers, may be adapted to benefit from the present disclosure.

[0056]

[0060] While the foregoing is directed to examples of the present disclosure, other and further examples of the disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the claims that follow.

Claims

1. 1. A method for producing a coating material, comprising: providing a base structure comprising an aluminum-containing material; forming a coating layer comprising a yttrium-containing material on the base structure; heat treating the coating layer to form a treated coating layer; A method comprising:

2. heat treating the coating layer, performing a laser treatment process on the coating layer, the performing laser treatment process further comprising directing optical radiation from a laser module onto a surface of the coating layer. The method of claim 1 further comprising:

3. The method of claim 2 , wherein the laser module provides the optical radiation having a wavelength between about 187 nm and about 10,000 nm.

4. The method of claim 1 , wherein heat treating the coating layer further comprises maintaining a base structure temperature between about 15 degrees Celsius and about 75 degrees Celsius.

5. The method of claim 1 , wherein the yttrium-containing material is yttrium oxide.

6. The treated coating layer is 4 g / cm ３ The method of claim 1 , wherein the film has a density of greater than 0.

05.

7. The method of claim 1 , wherein the treated coating layer has a thickness between about 0.5 μm and about 50 μm.

8. The method of claim 1 , wherein the treated coating layer has a surface roughness of greater than Ra 5 micrometers.

9. The aluminum-containing material from the base structure is Al ２ O ３ , AlN, or a ceramic material.

10. The method of claim 1 , wherein heat treating the coating layer further comprises removing surface particles from the base structure.

11. 1. A method for producing a coating material, comprising: providing a base structure comprising an aluminum-containing material; forming a coating layer comprising a yttrium-containing material on the base structure; laser treating the coating layer to form a treated coating layer; A method comprising:

12. 12. The method of claim 1 or 11, wherein the yttrium-containing material is at least one of yttrium oxide, fluorine yttrium oxide, and fluorine yttrium oxide with a metal dopant.

13. The method of claim 1 or 11, wherein the base structure is a gas distribution plate, a substrate support assembly, or a chamber component disposed within a plasma processing chamber.

14. 1. A chamber component comprising a laser-treated coating layer comprising a yttrium-containing material on the chamber component, the laser-treated coating layer having a surface roughness of 4.0 g / cm ３ Chamber parts with ultra high film density.

15. The chamber component of claim 14 , wherein the laser treated coating layer has a pore density of less than 2%.

Images