Light-emitting device

Abstract

To provide a novel light-emitting device with a microcavity structure which can improve the emission efficiency compared to the prior art.SOLUTION: In a light-emitting device with a microcavity structure that emits light in a near-infrared range, reflectance of one or both of a first electrode (reflective electrode) and a second electrode (semi-transmissive and semi-reflective electrode) with respect to light in a near-infrared range (e.g., light with a wavelength of 850 nm) is higher than the reflectance thereof with respect to light in a visible light range (greater than or equal to 400 nm and less than 750 nm).SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a light-emitting device, a light-emitting apparatus, an electronic device, and a lighting apparatus. However, one aspect of the present invention is not limited thereto. That is, one aspect of the present invention is an object, a method, One aspect of the present invention relates to a manufacturing method or a driving method. Composition of Matter. [Background technology]

[0002] A light-emitting device (also called a light-emitting element or organic EL element) consists of an EL layer sandwiched between a pair of electrodes. (c) has characteristics such as being thin and lightweight, having high-speed response to input signals, and low power consumption. Therefore, displays that use these technologies are attracting attention as the next generation of flat panel displays. It is being watched.

[0003] A light-emitting device emits electrons injected from each electrode by applying a voltage between a pair of electrodes. The electrons and holes recombine in the EL layer, and the light-emitting material (organic compound) contained in the EL layer is excited. The excited state is then converted to a ground state, at which point light is emitted. In the singlet excited state (S * ) and triplet excited states (T * ) from the singlet excited state The emission from the triplet excited state is called fluorescence, and the emission from the triplet excited state is called phosphorescence. The statistical generation rate of these in * :T * It is believed that the ratio is 1:3. The emission spectrum obtained from a material is specific to that material, and different types of organic compounds By using compounds as luminescent materials, it is possible to obtain light-emitting devices with various luminescent colors. Cut.

[0004] Regarding such light-emitting devices, in order to improve the device characteristics, Improvements and material development are being carried out, but in order to improve the luminous efficiency of light-emitting devices, It is important to improve the light extraction efficiency from optical devices. In order to improve the extraction efficiency, a micro-optical resonance technique was developed that utilizes the optical resonance effect between a pair of electrodes. A method for increasing the light intensity at a specific wavelength has been proposed using a microcavity structure. (See, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-182127 Summary of the Invention [Problem to be solved by the invention]

[0006] In a light-emitting device having a microcavity structure, a reflective electrode and a semi-transparent semi-reflective electrode are It is preferable to use a highly reflective electrode material for the electrodes. If the light emitted is in the general visible light range (around 400nm to 750nm), If a material with high reflectivity is used and the film thickness is increased to further increase the reflectivity, part of the light will be reflected The problem is that the loss due to absorption by the transmissive / semi-reflective electrode increases, resulting in a decrease in luminous efficiency. Therefore, in a light-emitting device that emits light in the normal visible light region, Higher efficiency was achieved by making the film thickness of the transmissive / semi-reflective electrode thinner.

[0007] Therefore, in one aspect of the present invention, in a light-emitting device having a microcavity structure, To provide a novel light-emitting device capable of improving the light-emitting efficiency compared to conventional devices. In a light-emitting device having a microcavity structure, the reliability of the element can be improved. To provide a novel light-emitting device.

[0008] The description of these problems does not preclude the existence of other problems. It is not necessary for the present invention to solve all of these problems. The above will be made clear from the description, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0009] In a light-emitting device with a microcavity structure, the light emitted from the EL layer is in the near infrared region. When the light is emitted in the wavelength range (around 750 nm to 1000 nm), the electrode of the light-emitting device is gold (A When using highly reflective materials such as ZnO, silver (Ag), and copper (Cu), the semi-transparent and semi-reflective electrodes In a specific range of thicker film thicknesses, it is more sensitive to light in the near-infrared region than to light in the visible region. Simulations have revealed that the film exhibits high reflectance. The reflective electrode is irradiated with visible light (light with a wavelength of 400 nm or more and less than 750 nm) or near-infrared light. Reflectance for light with wavelengths between 750nm and 1000nm is 40% or more and 100% or less The semi-transparent and semi-reflective electrode is preferably 70% or more and 100% or less. The reflectance to infrared light is 20% or more and 80% or less, preferably 40% or more and 70% or less. Let's say that.

[0010] Therefore, in a light-emitting device having a microcavity structure that emits light in the near-infrared region, Therefore, the reflective electrode of the light-emitting device, or both the reflective electrode and the semi-transparent / semi-reflective electrode, should have high reflectivity. By using this material and setting the thickness of the semi-transparent and semi-reflective electrode to 20 nm or more and 60 nm or less, light emission A highly efficient light-emitting device can be obtained.

[0011] In addition, by increasing the electrode thickness within the above range, it is possible to suppress light absorption while It is possible to form an electrode with high reflectivity, and furthermore, by increasing the film thickness, the resistance of the electrode can be reduced. Therefore, a light-emitting device with high luminous efficiency and reduced driving voltage can be obtained. It is possible.

[0012] One embodiment of the present invention includes an EL layer between a first electrode and a second electrode, and the first electrode has a reflective The first electrode is a phototransistor, and the second electrode is a phototransistor. It is a semi-transparent, semi-reflective electrode that has both the transmissive and reflective functions, and emits light in the near-infrared region from the EL layer. The first electrode and / or the second electrode emit light in the visible light region (400 nm It is more sensitive to light in the near infrared region (for example, light with a wavelength of 500 nm or more and less than 750 nm) than light in the near infrared region (for example, light with a wavelength of 500 nm). It is a light-emitting device that exhibits high reflectivity for light of, for example, 850 nm.

[0013] In another embodiment of the present invention, an EL layer is provided between a first electrode and a second electrode. The first electrode is a reflective electrode, and the second electrode is a reflective electrode for light (especially in the near infrared region (750 nm to 1000 nm) The semi-transparent and semi-reflective electrode has both the transmission and reflection functions of the light (below) and transmits near-infrared light from the EL layer. The first electrode and / or the second electrode emit light in the visible light region ( The near-infrared region is higher than light with a wavelength of 400 nm or more but less than 750 nm (for example, light with a wavelength of 500 nm). The second electrode has a thickness of 20 nm or more and a thickness of 6 0 nm or less, preferably 30 nm to 60 nm, more preferably 40 nm to 50 nm The light-emitting device has a film thickness of less than 100 μm.

[0014] In each of the above structures, an organic layer is provided in contact with the second electrode, and the organic layer has a refractive index of 1.7 or more. It is preferable that the refractive index is 0.05.

[0015] In the above-mentioned configuration, the thickness of the organic layer is preferably 80 nm or more and 160 nm or less. Or, it should be 80nm or more and 120nm or less.

[0016] In another embodiment of the present invention, an EL layer is provided between a first electrode and a second electrode. The first electrode is a reflective electrode, the second electrode is a semi-transparent semi-reflective electrode, and the EL layer is a The EL layer has a light-emitting substance that exhibits an emission peak in the wavelength range of 50 nm to 1000 nm. The light emitted by the light-emitting device has a wavelength longer than the emission peak of the luminescent material.

[0017] In each of the above configurations, the first electrode or the second electrode may be made of gold (Au), silver (Ag), It is preferable that the metal has at least one of copper (Cu).

[0018] In each of the above configurations, the first electrode has a transmittance of 90% or more to light with a wavelength of 850 nm. It is preferable to show the reflectance.

[0019] In each of the above configurations, the second electrode has a transmittance of 90% or more to light with a wavelength of 850 nm. It is preferable to show the reflectance.

[0020] In each of the above structures, the light-emitting material is preferably a phosphorescent material.

[0021] In each of the above structures, the light-emitting substance is an organometallic complex represented by the general formula (G1): It is preferable.

[0022] [ka]

[0023] In the above general formula (G1), R 1 ~R 11 are each independently hydrogen or a group having 1 to 6 carbon atoms. represents the alkyl group below, and R 1 ~R 4 At least two of them are alkyl groups with 1 to 6 carbon atoms. represents the alkyl group, R 5 ~R 9 At least two of the alkyl groups have 1 to 6 carbon atoms. X represents a substituted or unsubstituted benzene ring or naphthalene ring; n is 2 or 3; where L represents a monoanionic ligand.

[0024] Note that one embodiment of the present invention is not limited to a light-emitting device having the above-described light-emitting device, but may also be applicable to a light-emitting device Electronic devices that use light-emitting devices or light-emitting devices (specifically, light-emitting devices or light-emitting devices and connection terminals) or electronic devices having operation keys) and lighting devices (specifically, light-emitting devices and light-emitting The term "lighting device" also includes in its category an illumination device having a light device and a housing. The light-emitting device in this context refers to an image display device or a light source (including a lighting device). A connector, such as an FPC (Flexible Printed Circuit), is attached to the light-emitting device. it) or TCP (Tape Carrier Package) attached Module, module with printed wiring board at the end of TCP, or light-emitting device The IC (integrated circuit) is directly mounted on the board using the COG (Chip On Glass) method. All modules are included in the light emitting device. [Effects of the Invention]

[0025] According to one aspect of the present invention, in a light-emitting device having a microcavity structure, the light-emitting efficiency is It is possible to provide a novel light-emitting device that can improve the efficiency compared to conventional devices. According to one aspect of the present invention, a light-emitting device having a microcavity structure This makes it possible to provide a novel light-emitting device that can improve the reliability of the element.

[0026] The description of these effects does not preclude the existence of other effects. The embodiment does not necessarily have to have all of these effects. , the specification, drawings, claims, etc., and It is possible to extract other effects from the claims and other descriptions. [Brief explanation of the drawings]

[0027] [Figure 1] 1A and 1B are diagrams illustrating the structure of a light-emitting device. [Figure 2] FIG. 2 is a diagram illustrating the structure of a light-emitting device. [Figure 3] FIG. 3 is a diagram showing the simulation results of the reflectance of the electrode material. [Figure 4] FIG. 4 shows the results of a simulation of the EL emission spectrum emitted in the front direction. [Figure 5] FIG. 5 is a diagram showing the results of a simulation of the light extraction efficiency of the EL emission spectrum emitted in the front direction. [Figure 6] FIG. 6 is a diagram showing the simulation results of the peak intensity of the EL emission spectrum emitted in the front direction. [Figure 7] 7A and 7B are diagrams illustrating a light emitting device. [Figure 8] 8A, 8B, 8C, 8D, 8E, 8F, and 8G are diagrams illustrating electronic devices. [Figure 9] 9A, 9B, and 9C are diagrams illustrating electronic devices. [Figure 10] 10A and 10B are diagrams illustrating an automobile. [Figure 11] 11A and 11B are diagrams illustrating the lighting device. [Figure 12] FIG. 12 is a diagram illustrating a light-emitting device. [Figure 13] FIG. 13 is a graph showing the current density-radiant emittance characteristics of light-emitting device 1 and light-emitting device 2. As shown in FIG. [Figure 14] FIG. 14 is a graph showing the voltage-current density characteristics of light-emitting device 1 and light-emitting device 2. As shown in FIG. [Figure 15] FIG. 15 is a graph showing the current density-external quantum efficiency characteristics of light-emitting device 1 and light-emitting device 2. As shown in FIG. [Figure 16] FIG. 16 is a graph showing the voltage-radiant emittance characteristics of light-emitting device 1 and light-emitting device 2. As shown in FIG. [Figure 17] FIG. 17 is a diagram showing the spectral radiance of light-emitting device 1 and light-emitting device 2. As shown in FIG. [Figure 18] Figure 18 shows the emission spectrum of the organometallic complex, [Ir(dmdpbq)2(dpm)]. [Figure 19] FIG. 19 is a graph showing the viewing angle dependence of light-emitting device 1 and light-emitting device 2. In FIG. [Figure 20] FIG. 20 shows the reliability test results of the light emitting device 1 and the light emitting device 2. As shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0028] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the above description, and the form and details thereof may be changed without departing from the spirit and scope of the present invention. Therefore, the present invention is not limited to the embodiments described below. It is not to be construed as being limited to the

[0029] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as those in the actual embodiment for ease of understanding. Therefore, the disclosed invention may not necessarily represent the actual position, size, range, etc. The position, size, range, etc. are not necessarily limited to those disclosed in the drawings, etc.

[0030] In addition, in this specification and the like, when explaining the configuration of the invention using drawings, the same The reference numerals are commonly used even among different drawings.

[0031] (Embodiment 1) In this embodiment, a light-emitting device according to one embodiment of the present invention will be described with reference to FIGS. 1 and 2. The same reference numerals are used in Figures 1 and 2.

[0032] <Light-emitting device structure> FIG. 1 shows an example of a light-emitting device having an EL layer including a light-emitting layer between a pair of electrodes. The device has a structure in which an EL layer 103 is sandwiched between a first electrode 101 and a second electrode 102. In addition, when the first electrode 101 is used as an anode, the EL layer 103 receives holes (holes ) injection layer 111, hole transport layer 112, light emitting layer 113, electron transport layer 114, electron The injection layer 115 has a structure in which layers are stacked in order as a functional layer.

[0033] The light-emitting device according to one embodiment of the present invention has a micro-optical resonator (microcavity) structure. One of the pair of electrodes is a reflective electrode and the other is a semi-transparent semi-reflective electrode. The wave is reflected repeatedly by the electrodes, and the wave is generated over the distance between the electrodes (also called the cavity length or optical path length). The cavity length is determined by the thickness of the EL layer and the electrodes. The cavity length can be adjusted by adjusting the electrode. In this case, a transparent electrode such as ITO can be used. The optical path length can be controlled by adjusting the thickness of the carrier transport layer and the carrier injection layer. can.

[0034] Regarding the light-emitting direction of the light-emitting device, even if it has a top emission structure, it can be a bottom emission structure. For example, a top emission structure as shown in Figure 2 can be used. In the light-emitting device, the first electrode 101 is reflective and the second electrode 102 is reflective to light. The first layer has semi-transmissive and semi-reflective properties, which are both transparent and reflective. The electrode 101 is a reflective electrode, and the reflectance of the electrode for visible light or near-infrared light is 40% or more. The second electrode 102 is preferably 70% or more and 100% or less. , semi-transparent semi-reflective electrode, and the reflectance of the electrode to visible light or near infrared light is 20% or more. The ratio is 80% or less, preferably 40% to 70%. Resistivity is 1×10 -2 Therefore, the EL of the first electrode 101 is preferably Ωcm or less. the optical distance from the interface with the layer 103 (reflective region) to the light-emitting layer 113 (light-emitting region), and The light from the interface (reflective area) between the electrode 102 and the EL layer 103 to the light-emitting layer 113 (light-emitting area) By adjusting the optical distance, the intensity of the desired light (wavelength) emitted from the light emitting layer 113 can be adjusted. In order to more effectively increase the light extraction efficiency, the second electrode 102 (semi-transparent semi-reflective electrode) on the surface opposite to the surface facing the reflective electrode, 00 or more and 1200 or less organic compound layer (organic cap layer 105) is formed. preferable.

[0035] In the light-emitting device, an organic cap layer 105 is provided in contact with the second electrode 102. This reduces the difference in refractive index at the interface between the second electrode 102 and the air, thereby improving the light extraction efficiency. The organic cap layer 105 has a molecular weight of 300 or more and 1200 or less. It is preferable to use an organic compound layer of the above type. It is also preferable to use an organic material having electrical conductivity. When the second electrode 102 is a semi-transparent semi-reflective electrode, the thickness is set to 1 / 2 mm to maintain a certain degree of light transmittance. Therefore, the organic cap layer 105 is required to be thin, which may result in a decrease in conductivity. By using a material with electrical conductivity, the light extraction efficiency is improved while ensuring electrical conductivity and luminescence. The yield of element production can be improved. The organic cap layer 105 can be made of an organic compound having a low conductivity. In this case, the same organic compound as that used to form the EL layer 103 may be used. Alternatively, the organic cap layer 105 can be formed in a deposition chamber, so that the organic cap layer 105 can be easily formed. A film can be formed.

[0036] The light emitting layer 113 (light emitting region) is connected to the interface (reflective region) of the first electrode 101 with the EL layer 103. The optical distance from the interface (reflection area) between the first electrode 101 and the EL layer 103 to the light emitting It is expressed as the product of the distance to the layer 113 (light emitting region) and the refractive index. The optical distance from the interface with the EL layer 103 (reflective region) to the light-emitting layer 113 (light-emitting region) is From the interface (reflective area) between the second electrode 102 and the EL layer 103 to the light-emitting layer 113 (light-emitting area) It is expressed as the product of the distance and the refractive index.

[0037] Therefore, for example, the refractive index of the first electrode (reflective electrode) 101 is higher than that of the EL layer 103. When the efficiency is small, the thickness of the first electrode 101 is adjusted to increase the thickness of the first electrode 101 and the second electrode 102. The optical distance from the pole 102 is approximately mλ / 2 (m is a natural number, and λ is the wavelength of the desired light). By adjusting the light intensity so that the desired light (wavelength) emitted from the light-emitting layer 113 is The hole injection layer 111, the hole transport layer 112, the electron transport layer 114, By adjusting the thickness of one or more layers of the electron injection layer 115, the light emitting layer 113 The intensity of the emitted light (wavelength) can be increased.

[0038] 2, the first electrode 101 may be a semi-transparent semi-reflective electrode, and the second electrode 10 2 may be formed as a reflective electrode, and the light emitting device may have a bottom emission structure. stomach.

[0039] <First electrode and second electrode> As described above, the light-emitting device according to one embodiment of the present invention includes a first electrode 101 and a second electrode 102. One of the electrodes 102 is a semi-transparent semi-reflective electrode, and the other is a reflective electrode. In order to obtain high luminous efficiency, it is preferable that the above formula be satisfied.

[0040] If the functions of both electrodes can be fulfilled, the following materials can be used in appropriate combination. For example, metals, alloys, electrically conductive compounds, and mixtures thereof can be used. Specifically, In-Sn oxide (also called ITO), In-S Examples include i-Sn oxide (also called ITSO), In-Zn oxide, and In-W-Zn oxide. Other materials include aluminum (Al), titanium (Ti), chromium (Cr), manganese ( Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (G a), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum Ta (Ta), Tungsten (W), Palladium (Pd), Gold (Au), Platinum (Pt), Silver (Ag), yttrium (Y), neodymium (Nd), and other metals, as well as combinations of these metals. In addition, alloys containing the elements of Group 1 or Group 2 of the periodic table that are not listed above can also be used. or elements belonging to group 2 (e.g., lithium (Li), cesium (Cs), calcium ( Ca), strontium (Sr), europium (Eu), ytterbium (Yb), etc. Any rare earth metals and alloys containing them in appropriate combination, as well as graphene, etc. It is possible.

[0041] Among the materials listed above, gold (Au), silver (Ag), and copper (Cu) have high reflectivity. ), and aluminum (Al), how does the reflectance behave with respect to the wavelength of light? The results are shown in Figure 3.

[0042] From the results in Figure 3, the reflectance of silver (Ag) is hardly affected by light of different wavelengths. It exhibits high reflectivity without any problem, but it is in the visible light region (400nm to 750nm) below 750nm. Compared to light in the near infrared region above 750 nm (around 750 nm to 1000 nm), It was found that gold (Au) and copper (Cu) have a higher reflectivity to light. For light in the visible light range (around 400nm to 750nm) below 750nm, It shows reflectivity, but it is not suitable for light in the near infrared region above 750 nm (around 750 nm to 1000 nm). It was also found that the material exhibits high reflectivity against light. Aluminum (Al), which is widely used as a material for glass, has a high reflectivity in the visible light range. Reflectance decreases for light with wavelengths longer than 750 nm, i.e., light in the near-infrared region. The results were obtained.

[0043] Therefore, when the wavelength of light emitted from the light-emitting layer 113 of the light-emitting device is 750 nm or more, In the case of light of 1000 nm or less, gold (Au It is found that it is preferable to use copper (Cu), silver (Ag), or copper (Cu). The material is preferred because it shows a higher reflectivity for light with a wavelength of 850 nm than for light with a wavelength of 500 nm. In addition, these electrode materials exhibit a reflectance of 90% or more at a wavelength of 850 nm. preferable.

[0044] Here, a light-emitting device 0 having a top-emission structure shown in FIG. 2 is used as a model. EL light emitted in the front direction according to the change in the film thickness of the second electrode 102, which is a semi-reflective electrode The change in the spectrum was simulated. The results are shown in Figure 4. The element structure of the light-emitting device 0 is shown in Table 1 below. The photoluminescent material is an organometallic complex, [Ir(dmdpbq)2(dpm)], which emits light. The light obtained from the layer 113 originates from the emission of [Ir(dmdpbq)2(dpm)]. Since optical adjustment is required due to the change in the film thickness of the second electrode 102, The hole injection layer 111, the electron injection layer 115, and the organic capacitance layer 116 are arranged so as to maximize the light emission intensity in the vicinity of the hole injection layer 111. The thickness of the top layer 105 is adjusted appropriately.

[0045] [Table 1]

[0046] From the results shown in FIG. 4, it can be seen that the optical tuning is dependent on the film thickness of the second electrode 102 in the light-emitting device 0. As a result of adjustment, when the film thickness of the second electrode 102 was set to 40 nm, the wavelength was set to about 800 nm. The emission peak intensity of the EL emission spectrum is at a maximum value, and the film thickness of the second electrode 102 is When the wavelength was 30 nm or more and 60 nm or less, a narrowed EL emission spectrum was obtained. In addition, the EL emission spectrum in the front direction in the simulated wavelength range shown in Figure 4 The relationship between the area and the film thickness of the second electrode 102 is shown in FIG. The total amount of light in the front direction shows a maximum value when the wavelength is in the range of 20 nm to 40 nm. In addition, the EL emission in the front direction in the wavelength range of the simulation shown in Figure 4 The relationship between the peak intensity of the optical spectrum and the film thickness of the second electrode 102 is shown in FIG. When the thickness of the electrode 102 is in the range of 20 nm to 60 nm, the EL light emitting element 102 emits light from the front. The peak intensity of the optical spectrum showed a maximum value. The thickness of the film 2 is preferably 20 nm or more and 60 nm or less, more preferably 30 nm or more and 60 nm or less. The thickness is preferably 30 nm or more and 50 nm or less.

[0047] In addition, the results of this simulation show that when the wavelength of the emitted light is 750 nm or more, In this case, the thickness of the organic cap layer 105 is preferably 80 nm or more and 160 nm or less. It was found that the thickness is more preferably 80 nm or more and 120 nm or less.

[0048] These electrodes can be fabricated by sputtering or vacuum deposition.

[0049] <Hole injection layer> The hole injection layer 111 injects holes from the first electrode 101, which is an anode, into the EL layer 103. This is a layer into which holes are injected, and contains an organic acceptor material or a material with high hole injection properties.

[0050] The organic acceptor material is an organic compound whose LUMO level and HOMO level are close to each other. By separating charges between the organic compound and the material, holes are generated in the organic compound. Therefore, quinodimethane derivatives and Electron-withdrawing groups (halogen groups and silyl groups) such as chloranil derivatives and hexaazatriphenylene derivatives Compounds having a 7,7,8,8-tetracyano group can be used. -2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), 3,6-di Fluoro-2,5,7,7,8,8-hexacyanoquinodimethane, chloranil, 2,3, 6,7,10,11-Hexacyano-1,4,5,8,9,12-hexaazatripheny HAT-CN, 1,3,4,5,7,8-hexafluorotetracyano- Naphthoquinodimethane (abbreviation: F6-TCNNQ) can be used. Among the acceptor materials, HAT-CN has particularly high acceptor properties and film quality against heat. In addition, the [3] radialene derivative has a very high electron-accepting property. Specifically, α,α',α''-1,2,3-cyclopropanetriyl Lidentris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile] , α,α',α''-1,2,3-cyclopropanetriylidenetris[2,6-dichloro b-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], α, α',α''-1,2,3-Cyclopropanetriylidenetris[2,3,4,5,6- Pentafluorobenzeneacetonitrile] and the like can be used.

[0051] Materials with high hole injection properties include molybdenum oxide, vanadium oxide, ruthenium oxide, and Examples of the transition metal oxides include aluminum oxide, tungsten oxide, and manganese oxide. Other phthalocyanine (H2Pc) and copper phthalocyanine (CuPC) lids are also available. Cyanine compounds, etc. can be used.

[0052] In addition to the above materials, we also developed a low molecular weight compound, 4,4',4''-tris(N,N-diphenyl)propanol. (phenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[ N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTD ATA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamine] 4,4'-bis(N-{4-[N'-(3-methyl phenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation Name: DNTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N- phenylamino]benzene (abbreviation: DPA3B), 3-[N-(9-phenylcarbazol- [N-3-yl]-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPC A1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenyla 3-[N-(1-naphthyl)amino]-9-phenylcarbazole (abbreviation: PCzPCA2), -N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazol Aromatic amine compounds such as PCzPCN1 (abbreviation: PCzPCN1) can be used.

[0053] In addition, poly(N-vinyl alcohol), which is a polymer compound (oligomer, dendrimer, polymer, etc.), Poly(4-vinyltriphenylamine) (abbreviation: P VTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl]phenyl] (Nyl-N'-phenylamino)phenyl methacrylamide] (abbreviation: PTPDMA), Poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] ] (abbreviation: Poly-TPD), etc. can be used. PEDOT / PSS) / poly(styrenesulfonic acid) Acid-added polymers such as polyaniline / poly(styrene sulfonic acid) (PAni / PSS) It is also possible to use a diol-based compound, etc.

[0054] In addition, materials with high hole injection properties include hole transport materials and acceptor materials (electron acceptor materials). In this case, a composite material containing an acceptor material can be used. Electrons are extracted from the hole transport material, generating holes in the hole injection layer 111, and the holes are transported to the hole transport layer 11 Holes are injected into the light-emitting layer 113 through the hole-injecting layer 111. Alternatively, the layer may be formed of a single layer of a composite material containing a metal oxide and an acceptor material (electron-accepting material). However, the hole transport material and the acceptor material (electron acceptor material) are stacked in separate layers. It may be formed in layers.

[0055] The hole transport material is 1×10 -6 cm 2 / Vs or higher hole mobility In addition, other materials that have a higher hole transporting property than electron transporting property can be used. It can be used.

[0056] As the hole transporting material, a material having high hole transporting properties such as a π-electron-rich heteroaromatic compound is preferred. The π-electron-rich heteroaromatic compound is preferably an aromatic heteroaromatic compound having an aromatic amine skeleton. Aromatic amine compounds (having a triarylamine skeleton), carbazole-based carbazole compounds azole compounds (without triarylamine skeleton), thiophene compounds (thiophene compounds having a furan skeleton, and furan compounds (compounds having a furan skeleton). can be.

[0057] The aromatic amine compound may be 4,4'-bis[N-(1-naphthyl)-N- N,N'-bis(3-phenylamino)biphenyl (abbreviation: NPB or α-NPD) Methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diazo amine (abbreviation: TPD), 4,4'-bis[N-(spiro-9,9'-bifluorene-2- yl)-N-phenylamino]biphenyl (abbreviation: BSPB), 4-phenyl-4'-( 9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4- Phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: m BPAFLP), N-(9,9-dimethyl-9H-fluoren-2-yl)-N-{9, 9-Dimethyl-2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluorene- 2-yl)amino]-9H-fluoren-7-yl}phenylamine (abbreviation: DFLAD FL), N-(9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl ) Diphenylamine (abbreviation: DPNF), 2-[N-(4-diphenylaminophenyl) -N-phenylamino]spiro-9,9'-bifluorene (abbreviation: DPASF), 2,7 -bis[N-(4-diphenylaminophenyl)-N-phenylamino]-spiro-9, 9'-Bifluorene (abbreviation: DPA2SF), 4,4',4''-tris[N-(1-na 1'-TNATA), 4, 4',4''-Tris(N,N-diphenylamino)triphenylamine (abbreviation: TDA TA), 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino ]triphenylamine (abbreviation: m-MTDATA), N,N'-di(p-tolyl)-N, N'-diphenyl-p-phenylenediamine (DTDPPA), 4,4'-bis[ N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DP AB), N,N'-bis{4-[bis(3-methylphenyl)amino]phenyl}-N, N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviation: DNTPD ), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino ]benzene (abbreviation: DPA3B), etc.

[0058] Furthermore, the aromatic amine compound having a carbazolyl group includes 4-phenyl-4'-(9 -phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1B P), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl )-9-phenyl-9H-carbazol-3-amine (abbreviation: PCBiF), N-(1, 1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3- [(phenyl)-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBB iF), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole-3-yl) 1-naphthyl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-( 9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAN) B), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazole- 3-yl)triphenylamine (abbreviation: PCBNBB), 4-phenyldiphenyl-(9 -phenyl-9H-carbazol-3-yl)amine (abbreviation: PCA1BP), N,N' -bis(9-phenylcarbazol-3-yl)-N,N'-diphenylbenzene-1, 3-Diamine (abbreviation: PCA2B), N,N',N''-triphenyl-N,N',N' '-Tris(9-phenylcarbazol-3-yl)benzene-1,3,5-triamine (abbreviation: PCA3B), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl- 9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF ), N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-bis(9 ,9-dimethyl-9H-fluoren-2-yl)amine (abbreviation: PCBFF), N-[4 -(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]- PC BNBSF), N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl] -9,9-dimethyl-N-[4-(1-naphthyl)phenyl]-9H-fluorene-2- Amine (abbreviation: PCBNBF), N-phenyl-N-[4-(9-phenyl-9H-carbamyl) 9,9'-bifluoren-2-amine (abbreviated as 9,9'-biphenyl-3-ylphenyl)spiro-9,9'-bifluoren-2-amine PCBASF), 3-[N-(9-phenylcarbazol-3-yl)-N-phenyla 3,6-bis[N-(9 -phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazol (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbamoyl)

[0043] PCzPCN1, 3 -[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbamoyl PCzDPA1, 3,6-bis[N-(4-diphenylaminophenyl) [N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA2), 3 ,6-bis[N-(4-diphenylaminophenyl)-N-(1-naphthyl)amino]- 9-phenylcarbazole (abbreviation: PCzTPN2), 2-[N-(9-phenylcarbazole) [N-phenyl-3-yl]spiro-9,9'-bifluorene (abbreviation: P CASF), N-[4-(9H-carbazol-9-yl)phenyl]-N-(4-phenyl N,N'-bis[4-(carbazole) -9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluorene-2,7 -diamine (abbreviation: YGA2F), 4,4',4''-tris(carbazol-9-yl) ) triphenylamine (abbreviation: TCTA), etc.

[0059] The carbazole compound (not having a triarylamine skeleton) may also be 3-[ 4-(9-phenanthryl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPPn), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carba PCPN, 1,3-bis(N-carbazolyl)benzene (mCP ), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3 ,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 1,3, 5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[ 4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA) and the like. Furthermore, bicarbazole derivatives (e.g., 3,3'-bicarbazole 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation :PCCP), 9-(1,1'-biphenyl-3-yl)-9'-(1,1'-biphenyl (4-amino-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation Examples include βNCCP.

[0060] The thiophene compound (a compound having a thiophene skeleton) may be, for example, 1,3,5- Tri(dibenzothiophen-4-yl)benzene (abbreviation: DBT3P-II), 2,8- Diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzyl Dibenzothiophene (abbreviation: DBTFLP-III), 4-[4-(9-phenyl-9H-phenyl)- [(dibenzothiophene-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFL P-IV) and others.

[0061] In addition, the furan compounds (compounds having a furan skeleton) include 4,4',4''-( Benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) , 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl }dibenzofuran (abbreviation: mmDBFFLBi-II), etc.

[0062] Other examples include poly(N-vinylcarbazole) (abbreviated as PVK), poly(4-vinyltrimethylsilyl) phenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenyl N-(Nylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide ] (abbreviation: PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'- The hole transport polymer compounds such as [bis(phenyl)benzidine] (abbreviation: Poly-TPD) It can be used as a conductive material.

[0063] However, the hole transport material is not limited to the above, and one or more of various known materials may be used. A combination of these may be used as the hole transport material.

[0064] Acceptor materials used in the hole injection layer 111 include those of Group 4 to 5 in the periodic table. Oxides of metals belonging to Group 8 can be used. Specifically, molybdenum oxide, Vanadium, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide Among them, molybdenum oxide is particularly stable in the atmosphere and is easily absorbed. It is preferable because it has low moisture content and is easy to handle. In addition, the above-mentioned organic acceptor can be used. It is also possible.

[0065] The hole injection layer 111 can be formed by using various known film formation methods. For example, it can be formed by using a vacuum deposition method.

[0066] <Hole transport layer> The hole transport layer 112 transports holes injected from the first electrode 101 by the hole injection layer 111. The hole transport layer 112 is a layer that transports the electrons to the light emitting layer 113. The hole transport layer 112 contains a hole transport material. Therefore, the hole transport layer 112 is a layer containing holes that can be used in the hole injection layer 111. A transportable material can be used.

[0067] In the light-emitting device according to one embodiment of the present invention, the same organic compound as that of the hole-transport layer 112 It is preferable to use the same organic compound for the hole transport layer 112 and the light emitting layer 113. By using the compound, holes can be efficiently transported from the hole transport layer 112 to the light emitting layer 113. This is to ensure that

[0068] <Light-emitting layer> The light-emitting layer 113 is a layer containing a light-emitting substance (organic compound). There are no particular limitations on the luminescent material that can emit light with singlet excitation energy in the visible light region. luminescent materials (e.g., fluorescent materials) that convert triplet excitation energy into visible light Use emissive materials (e.g., phosphorescent materials or TADF materials) to change the light emission of a region However, in the light-emitting device according to one embodiment of the present invention, In the case where the light has an emission peak in the wavelength range of 1000 nm or more, the light-emitting layer , an organic compound (organic gold) that has an emission peak in the wavelength range of 750 nm to 1000 nm For example, a phthalocyanine compound (central metal: aluminum) is preferably used. nium, zinc, etc.), naphthalocyanine compounds, diethylene compounds (central metal: nickel) It is also possible to use quinone compounds, diimonium compounds, azo compounds, etc.

[0069] In addition, organometallic complexes having an emission peak in the wavelength range of 750 nm to 1000 nm An example is an organometallic complex represented by the following general formula:

[0070] [ka]

[0071] In general formula (G1), R 1 ~R 11 are each independently hydrogen or a group having 1 to 6 carbon atoms. represents an alkyl group, and R 1 ~R 4 At least two of these are alkyl groups having 1 to 6 carbon atoms. represents a group, and R 5 ~R 9 At least two of the groups represent alkyl groups having 1 to 6 carbon atoms. X represents a substituted or unsubstituted benzene ring or naphthalene ring, and n is 2 or 3. and L represents a monoanionic ligand.

[0072] In the general formula (G1), the alkyl group having 1 to 6 carbon atoms includes a methyl group, an ethyl group, and group, propyl group, isopropyl group, butyl group, sec-butyl group, isobutyl group, tert-butyl group t-butyl group, pentyl group, isopentyl group, sec-pentyl group, tert-pentyl group group, neopentyl group, hexyl group, isohexyl group, 3-methylpentyl group, 2-methyl Pentyl group, 2-ethylbutyl group, 1,2-dimethylbutyl group, 2,3-dimethylbutyl group groups, etc.

[0073] In the general formula (G1), when the benzene ring or the naphthalene ring has a substituent, the substituent Examples of the substituent include alkyl groups having 1 to 6 carbon atoms. The above description can be applied to the alkyl group.

[0074] As monoanionic ligands, monoanionic bidentate ligands with β-diketone structures are used. carboxylate ligand, monoanionic bidentate chelating ligand with carboxyl group, phenol A monoanionic bidentate chelating ligand with a hydroxyl group, both of which are nitrogen-coordinated. monoanionic bidentate chelating ligand, which can be cyclometallated to iridium and metal- Examples include bidentate ligands that form carbon bonds.

[0075] The monoanionic ligand is preferably any one of the general formulae (L1) to (L8). stomach.

[0076] [ka]

[0077] In general formulas (L1) to (L8), R 51 ~R 89are each independently hydrogen or substituted or represents an unsubstituted alkyl group having 1 to 6 carbon atoms, a halogeno group, a vinyl group, a substituted or unsubstituted carbon atom, a haloalkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 6 carbon atoms, or Substituted or unsubstituted alkylthio groups having 1 to 6 carbon atoms, substituted or unsubstituted alkylthio groups having 6 or more carbon atoms represents an aryl group of 13, and A 1 ~A 13 are independently sp bonds to nitrogen and hydrogen. 2 Hybridized carbon or substituted sp 2 represents a hybrid carbon, and the substituent has 1 to 6 carbon atoms. an alkyl group, a halogeno group, a haloalkyl group having 1 to 6 carbon atoms, or a phenyl group; represent.

[0078] Specific examples of the organometallic complex represented by the general formula (G1) include those represented by the structural formula ( Examples of the organometallic complexes are those represented by the structural formulas (100) to (107). The invention is not limited to these.

[0079] [ka]

[0080] The light-emitting layer 113 may contain other colors such as blue, purple, blue-purple, green, yellow-green, yellow, orange, A substance that emits light of a color such as red can be used as appropriate.

[0081] The light-emitting layer 113 is made of a light-emitting material (guest material) and one or more organic compounds (host However, the organic compound (host material, etc.) used here does not contain a light-emitting substance (a gate Use a material with an energy gap larger than that of the It is preferable that the one or more organic compounds (host materials, etc.) are the above-mentioned The hole transporting material that can be used for the hole transporting layer 112 and the electron transporting material that can be used for the electron transporting layer 114 described later are Examples of suitable organic compounds include electron transporting materials that can be used as the organic compound.

[0082] In the light-emitting layer 113, the first organic compound, the second organic compound, and the light-emitting substance are In the case of the structure having the above structure, an electron transporting material is used as the first organic compound, and A hole transport material is used as the organic compound, and a phosphorescent material, a fluorescent material, or a In this case, the first organic compound can be used. A combination in which the compound and the second organic compound form an exciplex is preferred.

[0083] The light-emitting layer 113 may be configured to have a plurality of light-emitting layers containing different light-emitting materials. Therefore, it is possible to obtain a configuration that exhibits different luminescent colors (for example, a configuration that can be obtained by combining luminescent colors that are complementary to each other). In addition, a single light-emitting layer may have a plurality of different light-emitting materials. It is also possible to do so.

[0084] The light-emitting material that can be used for the light-emitting layer 113 is, for example, the following: Examples include:

[0085] First, as a luminescent material that converts singlet excitation energy into luminescence, a fluorescent material (fluorescent luminescent substances).

[0086] Examples of fluorescent substances that convert singlet excitation energy into luminescence include: phenylene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazoline derivatives dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline Derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives Pyrene derivatives are particularly preferred because of their high luminescence quantum yield. Specific examples of pyrene derivatives include N,N'-bis(3-methylphenyl)-N, N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1 ,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-diphenyl-N, N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1 ,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(dibenzofuran-2 -yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6FrAPrn ), N,N'-bis(dibenzothiophen-2-yl)-N,N'-diphenylpyrene- 1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyren-1,6-diyl )bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-6-amine](abbreviation Name: 1,6BnfAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenyl Nylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfA Prn-02), N,N'-(pyren-1,6-diyl)bis[(6,N-diphenylbenzyl)] 1,6Bnzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn -03) etc.

[0087] In addition, 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2, 2'-Bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl- 9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2B Py), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N' -Diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-calcium (bazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (Abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-di N,9-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA) Phenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazo PCAPA, 4-(10-phenyl-9-anthryl)-4 '-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PC BAPA), 4-[4-(10-phenyl-9-anthryl)phenyl]-4'-(9- Phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPBA ), perylene, 2,5,8,11-tetra(tert-butyl)perylene (abbreviation: TBP ), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1- phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine](abbreviation Name: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-a N-(2-phenyl-9H-carbazol-3-amine (abbreviation: 2PCAPPA), -[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-tri Phenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA) and the like can be used. do.

[0088] Note that a luminescent material that converts singlet excitation energy into luminescence and can be used in the luminescent layer 113 is As the (fluorescent material), a fluorescent material that exhibits an emission color (emission peak) in the visible light region shown above is used. Not limited to fluorescent materials, fluorescent materials (e.g., For example, a material that emits red light and has a wavelength of 800 nm or more and 950 nm or less can be used. .

[0089] Next, examples of luminescent materials that convert triplet excitation energy into luminescence include phosphorescent materials. and thermally activated delayed fluorescence (TDF) TADF (Tajikistan Activated Delayed Fluorescence) materials It can be obtained.

[0090] First, phosphorescent materials, which are luminescent materials that convert triplet excitation energy into luminescence, include Examples include organometallic complexes, metal complexes (platinum complexes), and rare earth metal complexes. Each substance emits a different color (emission peak), so an appropriate substance can be selected and used as needed. Among phosphorescent materials, the following materials show luminescent colors (emission peaks) in the visible light region: The materials listed below are included.

[0091] It has blue or green color and the peak wavelength of the emission spectrum is 450 nm or more and 570 nm or less ( For example, for blue, it is 450nm to 495nm, and for green, it is 495nm or more. The phosphorescent material having a wavelength of 570 nm or less is preferably as follows: can be.

[0092] For example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl )-4H-1,2,4-triazol-3-yl-κN 2 ]phenyl-κC}iridium (III) (abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4 -diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir (Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl [Ir(iPrp)] tz-3b)3]), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl [Ir(iPr5 btz)3]), organometallic complexes with a 4H-triazole skeleton, such as tris[3- Methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato ]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), tris(1-methyl Iridium(II) I) (abbreviation: [Ir(Prtz1-Me)3]) Organometallic complexes containing fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl]propanol [phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpmi)3 ]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f] [Ir(dmpimpt-Me)3 organometallic complexes with imidazole skeletons, such as bis[2-(4',6'-difluoromethyl] (O-phenyl)pyridinato-N,C 2’ ]iridium(III) tetrakis(1-pyrazoline) aryl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pi Lysinato-N,C 2’ ] Iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C 2’ }Iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]) , bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium (III) Acetylacetonate (abbreviation: FIr(acac)) Examples of suitable organometallic complexes include those having phenylpyridine derivatives as ligands.

[0093] It has a green, yellow-green, or yellow color and the peak wavelength of the emission spectrum is 495 nm or more and 590 nm or less. Examples of phosphorescent materials with a wavelength of 1000 nm or less include the following: For yellow-green, 495nm to 570nm, for yellow-green, 530nm to 570nm In the case of yellow, the wavelength is preferably 570 nm or more and 590 nm or less.)

[0094] For example, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation :[Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)i Lithium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(trimethylsilyl) Bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(m ppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4 -phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(a cac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenyl [Pyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]) , (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenyl [Ir(mpmppm)2(acac) ]), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethyl (phenyl)-4-pyrimidinyl-κN 3 ]phenyl-κC}iridium(III) (abbreviation :[Ir(dmppm-dmp)2(acac)]), (acetylacetonato)bis(4 ,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2( organometallic iridium complexes with pyrimidine skeletons, such as (acetyl acac)] cetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III)( Abbreviation: [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5 -isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: Organometallic pyrazine skeletons such as [Ir(mppr-iPr)2(acac)] Iridium complex, tris(2-phenylpyridinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C 2’ ) Iriji Ir(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), (benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [I r(bzq)2(acac)]), tris(benzo[h]quinolinato)iridium(II I) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato- N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(a cac)]), bis[2-(2-pyridinyl-κN)phenyl-κC][2-(4-phenyl [Ir( ppy)2(4dppy)]), bis[2-(2-pyridinyl-κN)phenyl-κC] [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC], [2- (4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2 [-pyridinyl-κN)phenyl-κC]iridium (abbreviated as [Ir(ppy)2(mdp organometallic iridium complexes with pyridine skeletons, such as bis(2,4-diphenylphosphine phosphate); Phenyl-1,3-oxazolato-N,C 2’ ) Iridium(III) acetylacetoner Ir(dpo)2(acac)], bis{2-[4'-(perfluorooctanoic acid) Phenyl)phenyl]pyridinato-N,C 2’}Iridium(III) acetylacetoner Ir(p-PF-ph)2(acac)], bis(2-phenylbenzothiazol-1,2-diol), Azorato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(b In addition to organometallic complexes such as tris(acetylacetonato)(mono Phenanthroline) terbium(III) (abbreviation: [Tb(acac)3(Phen)] ) rare earth metal complexes.

[0095] Yellow, orange, or red, with a peak wavelength of 570 nm or more and 750 nm or less Examples of phosphorescent materials with a luminance of m or less include the following: For orange, 570nm to 590nm, and for orange, 590nm to 620nm. For red, the wavelength is preferably 600 nm or more and 750 nm or less.

[0096] For example, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinyl] dinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)yl Ir(III) (abbreviation: [Ir(5mdppm)2(dpm)]), (dipivaloylmethyl Thanato)bis[4,6-di(naphthalen-1-yl)pyrimidinato]iridium(III ) (abbreviation: [Ir(d1npm)2(dpm)]) Metal complex, (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridide Ir(tppr)2(acac)], bis(2,3,5-trimethylsilyl) (triphenylpyrazinate)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir (tppr)2(dpm)]), bis{4,6-dimethyl-2-[3-(3,5-dimethyl {(2,6-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]phenyl-κC} ... thyl-3,5-heptanedionate-κ 2 O,O')iridium(III) (abbreviation: [Ir (dmdppr-P)2(dibm)]), bis{4,6-dimethyl-2-[5-(4- Cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazine {(2,2,6,6-tetramethyl-3,5-heptanedioic acid)-N-phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedioic acid) Nat-κ 2 O,O')iridium(III) (abbreviation: [Ir(dmdppr-dmCP) 2(dpm)]), bis{4,6-dimethyl-2-[5-(5-cyano-2-methylphenyl) Nyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC} (2,2,6,6-tetramethyl-3,5-heptanedionato-κ 2 O,O') Iridium Ir(III) (abbreviation: [Ir(dmdppr-mCP)(dpm)]), (acetyl Acetonato)bis[2-methyl-3-phenylquinoxalinato-N,C 2’ ]iridium (III) (abbreviation: [Ir(mpq)2(acac)]), (acetylacetonato)bis (2,3-diphenylquinoxalinato-N,C 2’ ) Iridium(III) (abbreviation: [I r(dpq)2(acac)]), (acetylacetonato)bis[2,3-bis(4-furan [Fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2 Organometallic complexes with pyrazine skeletons such as tris(1-phenyl(acac)]) and Isoquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(piq)3]), Bis(1-phenylisoquinolinato-N,C) 2’ ) Iridium(III) acetylacetonate nate (abbreviation: [Ir(piq)2(acac)]), bis[4,6-dimethyl-2-( 2-Quinolinyl-κN)phenyl-κC](2,4-pentanedionato-κ 2 O,O') Pyridinium compounds such as iridium(III) (abbreviation: [Ir(dmpqn)2(acac)]) Organometallic complexes with an alkylene skeleton, 2,3,7,8,12,13,17,18-octaethyl Platinum complexes such as -21H,23H-porphyrin platinum(II) (abbreviation: [PtOEP]) Tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline ) europium(III) (abbreviation: [Eu(DBM)3(Phen)]), tris[1- (2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline) Rare earth metals such as boropium(III) (abbreviated as [Eu(TTA)3(Phen)]) Complexes are included.

[0097] Next, the TADF materials, which are light-emitting materials that convert triplet excitation energy into light, are as follows: The TADF material is a material that can generate triplet excited states with only a small amount of light. Thermal energy can upconvert to the singlet excited state (reverse intersystem crossing), It is a material that efficiently emits light (fluorescence) from the excited state. The condition for efficient fluorescence is that the energy difference between the triplet and singlet excited states is is 0 eV or more and 0.2 eV or less, preferably 0 eV or more and 0.1 eV or less. In addition, the delayed fluorescence in TADF materials has the same spectrum as normal fluorescence. Its lifetime is approximately 1×10 -6 seconds or more, preferably 1 x10 -3 More than a second.

[0098] Examples of TADF materials include fullerenes and their derivatives, and acridines such as proflavine. Derivatives, eosin, etc. Also, magnesium (Mg), zinc (Zn), cadmium Cd, Sn, Pt, In, or Palladium Examples of metal-containing porphyrins include metal-containing porphyrins containing Pd, etc. For example, protoporphyrin-tin fluoride complex (abbreviation: SnF2(Proto IX)) , mesoporphyrin-tin fluoride complex (abbreviated as SnF2(Meso IX)), hematopoietin Hematoxyl tin fluoride complex (abbreviated as SnF2 (Hemato IX)), coproporf Fluorine tetramethyl ester-tin fluoride complex (abbreviation: SnF2(Copro III- 4Me), octaethylporphyrin-tin fluoride complex (abbreviation: SnF2(OEP)) , etioporphyrin-tin fluoride complex (abbreviation: SnF2(Etio I)), octaethene Examples include thylporphyrin-platinum chloride complex (abbreviation: PtCl2OEP).

[0099] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[ 2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-T RZ), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-3-yl] 4,6-diphenyl-1,3,5-triazine (abbreviated as '4,6-diphenyl-1,3,5-triazine- ...') Name: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl ]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4 -(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5- Diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-diphenyl Methyl-9H-acridin-10-yl)-9H-xanthen-9-one (Acr XTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl] Sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[a π-electron permeation of clidin-9,9'-anthracene]-10'-one (abbreviation: ACRSA) A heterocyclic compound having one or both of a π-electron-deficient heteroaromatic ring and a π-electron-deficient heteroaromatic ring is used. You can also be there.

[0100] In addition, a substance in which a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring are directly bonded is The donor property of the π-electron-rich heteroaromatic ring and the acceptor property of the π-electron-deficient heteroaromatic ring are both strong. This is particularly preferable because the energy difference between the singlet excited state and the triplet excited state is small.

[0101] In the light-emitting layer 113, the above-mentioned light-emitting material (singlet excitation energy in the visible light region) luminescent materials (e.g., fluorescent materials) that convert triplet excitation energy into visible light When using luminescent materials (e.g., phosphorescent materials or TADF materials) that change the luminescence of the In this case, in addition to these luminescent materials (organic compounds), it is preferable to combine Therefore, it is preferable to use the organic compounds shown below (some overlap with the above).

[0102] First, when a fluorescent substance is used as the luminescent substance, an anthracene derivative or a tetracene derivative compounds, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, dibenzo[g,p]chrysene It is preferable to use an organic compound such as a condensed polycyclic aromatic compound, such as a fluorine derivative, in combination with the .

[0103] A specific example is 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl] 3,6-diphenyl-9-[4-(1 0-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: DPCzPA ), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviation PCPN), 9,10-diphenylanthracene (DPAnth), N,N- Diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carba CzAlzol-3-amine (abbreviation: CzAlPA), 4-(10-phenyl-9-anthryl) Triphenylamine (abbreviation: DPhPA), YGAPA, PCAPA, N,9-diphenyl N-{4-[4-(10-phenyl-9-anthryl)phenyl]phenyl}-9H -Carbazole-3-amine (abbreviation: PCAPBA), N-(9,10-diphenyl-2 -anthryl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PC APA), 6,12-dimethoxy-5,11-diphenylchrysene, N,N,N',N' ,N'',N'',N''',N'''-Octaphenyldibenzo[g,p]chrysene- 2,7,10,15-Tetraamine (abbreviation: DBC1), 9-[4-(10-phenyl- 9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4- (10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl) phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9 -phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)-biphenyl -4'-yl}-anthracene (abbreviation: FLPPA), 9,10-bis(3,5-diphenyl 9,10-di(2-naphthyl)anthracene (abbreviation: DPPA), Helix (abbreviation: DNA), 2-tert-butyl-9,10-di(2-naphthyl) ant Helical (abbreviation: t-BuDNA), 9,9'-bianthryl (abbreviation: BANT), 9,9 '-(Stilbene-3,3'-diyl)diphenanthrene (abbreviation: DPNS), 9,9' -(Stilbene-4,4'-diyl)diphenanthrene (abbreviation: DPNS2), 1,3, 5-Tri(1-pyrenyl)benzene (abbreviation: TPB3), 5,12-diphenyltetracene and 5,12-bis(biphenyl-2-yl)tetracene.

[0104] In addition, when a phosphorescent material is used as the luminescent material, the triplet excitation energy (group The triplet excited energy is larger than the energy difference between the ground state and the triplet excited state. In addition to such organic compounds, it is preferable to combine them with the above-mentioned hole An organic compound with high electron transporting properties (second organic compound) and an organic compound with high electron transporting properties (first organic compound) Organic compounds) may be used in combination.

[0105] In addition to these organic compounds, there are several organic compounds that can form exciplexes. a compound (e.g., a first organic compound and a second organic compound, a first host material and a second A host material, or a host material and an assist material, etc. may be used. When forming an exciplex using an organic compound, a compound that easily accepts holes (positive By combining a compound that easily accepts electrons (hole transport material) with a compound that easily accepts electrons (electron transport material), This is preferable because it allows efficient formation of an exciplex. By incorporating an exciplex into the light-emitting layer, energy transfer from the exciplex to the light-emitting substance can be improved. ExTET (Exciplex-Triplet Energy Transfer) er) can be performed efficiently, which increases the luminous efficiency. The substance and the exciplex may be contained in the light-emitting layer.

[0106] The above materials may also be used in combination with low molecular weight materials or polymeric materials. Specific examples of the polymers include poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9 ,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl) ] (abbreviation: PF-Py), poly[(9,9-dioctylfluorene-2,7-diyl)- co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy) In addition, the film can be formed by appropriately using a known method (vacuum deposition method, coating method, printing method, etc.). It is possible.

[0107] <Electron transport layer> The electron transport layer 114 is formed by electron injection layer 115, which will be described later, and is injected from the second electrode 102. The electron transport layer 114 is a layer that transports the electrons to the light emitting layer 113. The electron transporting material used in the electron transport layer 114 is a layer containing 1×10 -6 cm 2 / V A substance having an electron mobility of s or higher is preferred. In addition, the electron transport layer (114, 114 a, 114b) can function as a single layer, but can be made into a laminated structure of two or more layers as needed. This can also improve the device characteristics.

[0108] The organic compounds that can be used for the electron transport layer 114 include π-electron-deficient heteroaromatic compounds. In addition, as the π-electron deficient heteroaromatic compound, is a benzofurodiazine in which a benzene ring is fused to the furan ring of the furodiazine skeleton as an aromatic ring. A compound having a furan skeleton, in which a naphthyl ring is condensed as an aromatic ring to the furan ring of the furodiazine skeleton. The compounds having a naphthofurodiazine skeleton, and the compounds having an aromatic ring in the furan ring of the furodiazine skeleton Compounds having a phenanthrodiazine skeleton in which a phenanthro ring is fused to a thieno A benzothienodiazine skeleton in which a benzene ring is condensed as an aromatic ring to the thieno ring of the diazine skeleton. A compound with a naphthyl ring fused to the thieno ring of the thienodiazine skeleton. compounds having a naphthothienodiazine skeleton, compounds having an aromatic ring in the thieno ring of the thienodiazine skeleton, Compounds with a phenanthrothienodiazine skeleton, in which a phenanthro ring is condensed, etc. In addition, metal complexes having a quinoline skeleton and metal complexes having a benzoquinoline skeleton are also available. Metal complexes, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, etc. , oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives conductors, thiazole derivatives, phenanthroline derivatives, quinoline derivatives with quinoline ligands Conductors, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives Dipyridine derivatives, bipyridine derivatives, pyrimidine derivatives, other nitrogen-containing heteroaromatic compounds, etc. Examples include:

[0109] As the electron transport material, 9-[(3'-dibenzothiophen-4-yl)biphene [1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9 mDBtBPNfpr), 9-(9'-phenyl-3,3'-bi-9H-carbazole- 9-yl)naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9PCC zNfpr), 9-[3-(9'-phenyl-3,3'-bi-9H-carbazole-9- 1',2':4,5]furo[2,3-b]pyrazine (abbreviated as 9 mPCCzPNfpr), 9-[3-(9'-phenyl-2,3'-bi-9H-carbazo (1',2':4,5)furo[2,3-b]pyrazine (Abbreviation: 9mPCCzPNfpr-02), 10-[(3'-dibenzothiophene-4- (yl)biphenyl-3-yl)naphtho[1',2':4,5]furo[2,3-b]pyrazine 10-(9'-phenyl-3,3'-biphenyl-9H -carbazol-9-yl)naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 10PCCzNfpr), 12-[(3'-dibenzothiophen-4-yl)biphenyl] Phenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine 12mDBtBPPnfpr), 9-[4-(9'-phenyl-3,3'-biphenyl] -9H-carbazol-9-yl)phenyl]naphtho[1',2':4,5]furo[2, 3-b]pyrazine (abbreviation: 9pPCCzPNfpr), 9-[4-(9'-phenyl-2 ,3'-bi-9H-carbazol-9-yl)phenyl]naphtho[1',2':4,5] Furo[2,3-b]pyrazine (abbreviation: 9pPCCzPNfpr-02), 9-[3'-( 6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)biphenyl-3-yl [1',2':4,5]furo[2,3-b]pyrazine (abbreviated as 9mBnfBP Nfpr), 9-[3'-(6-phenyldibenzothiophen-4-yl)biphenyl- 3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDB tBPNfpr-02), 9-{3-[6-(9,9-dimethylfluoren-2-yl) Dibenzothiophen-4-yl]phenyl}naphtho[1',2':4,5]furo[2,3 -b]pyrazine (abbreviation: 9mFDBtPNfpr), 11-(3-naphtho[1',2': 4,5]furo[2,3-b]pyrazin-9-yl-phenyl)-12-phenylindolo [2,3-a]carbazole (abbreviation: 9mIcz(II)PNfpr), 3-naphtho[1 ',2':4,5]furo[2,3-b]pyrazin-9-yl-N,N-diphenylbenzene 9mTPANfpr, 10-[4-(9'-phenyl-3,3'-biphenyl)-2-( ... -9H-carbazol-9-yl)phenyl]naphtho[1',2':4,5]furo[2, 3-b]pyrazine (abbreviation: 10mPCCzPNfpr), 11-[(3'-dibenzothio (phen-4-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo [2,3-b]pyrazine (abbreviation: 11mDBtBPPnfpr), 10-[3-(9'- phenyl-3,3'-bi-9H-carbazol-9-yl)phenyl]naphtho[1',2 ':4,5]furo[2,3-b]pyrazine (abbreviation: 10pPCCzPNfpr), 9-[ 3-(7H-dibenzo[c,g]carbazol-7-yl)phenyl]naphtho[1',2 ':4,5]furo[2,3-b]pyrazine (abbreviation: 9mcgDBCzPNfpr), 9- {3'-[6-(biphenyl-3-yl)dibenzothiophen-4-yl]biphenyl- 3-yl}naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDB tBPNfpr-03), 9-{3'-[6-(biphenyl-4-yl)dibenzothiophene phenyl-4-yl]biphenyl-3-yl}naphtho[1',2':4,5]furo[2,3- b]pyrazine (abbreviation: 9mDBtBPNfpr-04), 11-[3'-(6-phenyl Dibenzothiophen-4-yl)biphenyl-3-yl]phenanthro[9',10': 4,5]furo[2,3-b]pyrazine (abbreviation: 11mDBtBPPnfpr-02) Examples include:

[0110] Also, 4-[3-(dibenzothiophen-4-yl)phenyl]-8-(naphthalene-2 -yl)-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8βN-4mDBtPB fpm), 8-(1,1'-biphenyl-4-yl)-4-[3-(dibenzothiophene -4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8BP- 4mDBtPBfpm), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl] 4,8mDBtP2Bfpm ), 8-[(2,2'-binaphthalen)-6-yl]-4-[3-(dibenzothiophene -4-yl)phenyl-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2 )-4mDBtPBfpm), 3,8-bis[3-(dibenzothiophen-4-yl)fpm] phenyl]benzofuro[2,3-b]pyrazine (abbreviation: 3,8mDBtP2Bfpr), 8 -[3'-(dibenzothiophen-4-yl)(1,1'-biphenyl-3-yl)]na Futo[1',2':4,5]furo[3,2-d]pyrimidine (abbreviation: 8mDBtBPNf pm) can also be used.

[0111] Also, tris(8-quinolinolato)aluminum(III) (abbreviation: Alq3), tris (4-methyl-8-quinolinolato)aluminum(III) (Almq3), bis (10-hydroxybenzo[h]quinolinato)beryllium(II) (BeBq2) , bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(I II) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), etc. metal complexes having a quinoline skeleton or a benzoquinoline skeleton, bis[2-(2-benzo[ bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO) Thiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), bis[2-(2-hydro [Oxyphenyl]benzothiazolatozinc(II) (abbreviation: Zn(BTZ)2) Metal complexes having an azole skeleton or a thiazole skeleton can also be used.

[0112] Also, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4 -Oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl) Nyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9 -[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H -carbazole (abbreviation: CO11), oxadiazole derivatives such as 3-(4-biphenylyl) (4-tert-butylphenyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazolium (abbreviation: TAZ), 3-(4-tert-butylphenyl)-4-(4-ethylphenyl) p-EtTAZ triazole derivatives such as 2,2',2''-(1,3,5-benzenetriyl)tris (1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzo [4-( ... Imidazole derivatives (including benzimidazole derivatives) such as mDBTBIm-II and 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: B oxazole derivatives such as bathophenanthroline (abbreviated as Bphen), Cuproine (abbreviation: BCP), 2,9-bis(naphthalen-2-yl)-4,7-difluoro Phenanthroline derivatives such as phenyl-1,10-phenanthroline (NBphen) Conductor, 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quino Xaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophene-4 -yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTB PDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl 2-[4-(3, 6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinox Sarin (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl) )phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), and and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxa quinoxaline derivatives such as dibenzoquinone (abbreviation: 6mDBTPDBq-II) Xaline derivative, 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine 35DCzPPy, 1,3,5-tri[3-(3-pyridyl)phenyl] Pyridine derivatives such as benzene (abbreviation: TmPyPB), 4,6-bis[3-(phenanthroline) (Tren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-biphenyl bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2P m-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidin pyrimidine derivatives such as 4,6mCzP2Pm, 2-[4-[3-(N-phenylalanine) (phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl} -4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), mPCC zPTzn-02, 9-[3-(4,6-diphenyl-1,3,5-triazine-2-yl] mPCC zPTzn-02), 5-[3-(4,6-diphenyl-1,3,5-triazine-2- 7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-{3-[3-(dibenzothiophene-4- {4,6-diphenyl-1,3,5-triazine (abbreviation: m Triazine derivatives such as DBtBPTzn can be used.

[0113] Furthermore, polymer compounds such as PPy, PF-Py, and PF-BPy can also be used.

[0114] <Electron injection layer> The electron injection layer 115 is a layer for increasing the efficiency of electron injection from the cathode 102. The work function value of the material of 02 is compared with the LUMO level value of the material used in the electron injection layer 115. It is preferable to use a material with a small difference (0.5 eV or less) when comparing the two. The electron injection layer 115 may contain lithium, cesium, lithium fluoride (LiF), or cesium fluoride. (CsF), calcium fluoride (CaF2), 8-(quinolinolato)lithium (abbreviation: L iq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), LiPPy), 4-phenyl-2-(2-pyridinolatolithium (abbreviation: LiPPy), Lithium lysyl phenolate (LiPPP) and lithium oxide (LiO x ), carbonate Use of alkali metals such as sodium, alkaline earth metals, or compounds thereof. It is also possible to use rare earth metal compounds such as erbium fluoride (ErF3). can be done.

[0115] Also, as in the light-emitting device shown in FIG. 1B, between the two EL layers (103a, 103b) By providing the charge generating layer 104, a structure in which a plurality of EL layers are stacked between a pair of electrodes ( In this embodiment, the structure described with reference to FIG. The hole injection layer (111), the hole transport layer (112), the light emitting layer (113), the electron transport layer ( The hole injection layer (111) and the electron injection layer (114) are respectively formed by the hole injection layer (111) and the electron injection layer (115) as described in FIG. 8B. a, 111b), hole transport layers (112a, 112b), light-emitting layers (113a, 113b), an electron transport layer (114a, 114b), an electron injection layer (115a, 115b), The functions and materials used are the same.

[0116] <Charge generation layer> The charge generating layer 104 in the light emitting device of FIG. 1B is connected to the first electrode (anode) 101. When a voltage is applied between the second electrode (cathode) 102 and the EL layer 103a, electrons are injected into the EL layer 103a. The charge generating layer 104 has a function of injecting holes into the EL layer 103b. Even if an electron acceptor is added to the electron transport material, It may also be a structure in which an electron donor (donor) is added. The charge generation layer 104 may be formed using the above-mentioned materials. This makes it possible to suppress an increase in driving voltage when an EL layer is stacked.

[0117] In the charge generation layer 104, when an electron acceptor is added to a hole transport material, As the hole transporting material, the materials shown in this embodiment mode can be used. The acceptor is 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinoline. Examples include dimethane (abbreviation: F4-TCNQ), chloranil, etc. Examples of the oxides of metals belonging to Groups 4 to 8 in the table include: Vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide Examples include tin oxide, manganese oxide, and rhenium oxide.

[0118] In addition, the charge generating layer 104 is configured such that an electron donor is added to an electron transporting material. In this case, the materials shown in this embodiment mode can be used as the electron transporting material. As the electron donor, an alkali metal, an alkaline earth metal, a rare earth metal, or an element Metals belonging to Groups 2 and 13 of the periodic table and their oxides and carbonates can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), Calcium (Ca), ytterbium (Yb), indium (In), lithium oxide, carbonate It is preferable to use cesium, etc. Also, organic compounds such as tetrathianaphthacene may be used as the electron donor.

[0119] Although FIG. 1B shows a configuration in which two EL layers 103 are stacked, By providing a charge generating layer, a stacked structure of three or more EL layers may be formed. The light-emitting layer 113 (113a, 113b) included in (103, 103a, 103b) is Each of these materials contains a luminescent material or a combination of multiple materials, and emits a fluorescent light of the desired color. The light-emitting layer 113 (113a, 113b) can be configured to emit light or phosphorescent light. When a plurality of 13b) are provided, the light emitting layers may be configured to emit different colors. In this case, different materials are used for the luminescent materials and other materials used in each of the laminated luminescent layers. For example, the light-emitting layer 113a may be blue, and the light-emitting layer 113b may be red, green, or yellow. The light-emitting layer 113a can be red, and the light-emitting layer 113b can be blue or green. Furthermore, the EL layer may be laminated in three or more layers. In this case, the light-emitting layer (113a) of the first EL layer is blue, and the light-emitting layer (113b) of the second EL layer is blue. The layer (113b) is red, green, or yellow, and the third EL layer is blue. In addition, the first EL layer (113a) can be made red, and the second EL layer (113b) can be made red. The light-emitting layer (113b) is blue, green, or yellow, and the light-emitting layer of the third EL layer is It can also be red. In addition, other colors can be used as appropriate, taking into consideration the brightness and characteristics of multiple luminescent colors. A combination of the above emission colors can be used.

[0120] <Substrate> The light-emitting device shown in this embodiment mode can be formed over various substrates. The type of the substrate is not limited to a specific one. An example of the substrate is a semiconductor substrate (e.g., For example, single crystal substrate or silicon substrate), SOI substrate, glass substrate, quartz substrate, plastic Substrates, metal substrates, stainless steel substrates, substrates with stainless steel foil, Tungsten substrate, substrate with tungsten foil, flexible substrate, lamination film Examples of the substrate include paper, paper containing fibrous materials, and base films.

[0121] Examples of the glass substrate include barium borosilicate glass and aluminoborosilicate glass. Glass or soda lime glass, etc. Flexible substrates, lamination films, etc. Examples of base films include polyethylene terephthalate (PET), polyethylene terephthalate (PE ... Plastics such as polyethylene naphthalate (PEN) and polyethersulfone (PES) Synthetic resins such as acrylic resin, polypropylene, polyester, polyvinyl fluoride, Or polyvinyl chloride, polyamide, polyimide, aramid resin, epoxy resin, inorganic vapor deposition Examples of the material include film and paper.

[0122] The light-emitting device described in this embodiment can be manufactured by a vacuum process such as evaporation or a spin coating. Solution processes such as the inkjet method and the vapor deposition method can be used. These include sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition. Physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods can be used. In particular, the functional layers (hole injection layers (111, 111a, 111b)) included in the EL layer of the light-emitting device are 1b), hole transport layer (112, 112a, 112b), light emitting layer (113, 113a, 11 3b), electron transport layer (114, 114a, 114b), electron injection layer (115, 115a, 115b) and the charge generating layer (104, 104a, 104b)) are formed by evaporation ( vacuum deposition method, etc.), coating method (dip coating method, die coating method, bar coating method, spin coating method, etc. method, spray coating method, etc.), printing method (inkjet method, screen (stencil printing method, Offset (lithographic printing), flexographic (relief printing), gravure, microcontact The insulating layer can be formed by a method such as a nanoimprint method.

[0123] Note that the composition for a light-emitting device according to one embodiment of the present invention was used to produce the E When forming a functional layer included in the L layer, it is particularly preferable to use a vapor deposition method. The light-emitting layers (113, 113a, 113b) are formed using three types of materials (light-emitting material, first organic When using a compound (a second organic compound), the same number of materials as the material to be evaporated (in this case, three) A first organic compound 401, a second organic compound 402, and a third organic compound 403 were deposited in the deposition sources. and a light-emitting material 403 are co-deposited on the surface of the substrate 400. The light-emitting layer (113, 113a, 113b) is formed as a mixed film of materials. A composition for a light-emitting device, which is a mixture of a first organic compound and a second organic compound among the materials. When using a material, three types of materials are used to form the light-emitting layers (113, 113a, 113b). Even if two kinds of evaporation sources are used, the composition for a light-emitting device 404 and the and the optical material 405 are co-evaporated to form a mixture formed using three types of evaporation sources. It is possible to form the light-emitting layers (113, 113a, 113b) which are the same mixed films as the films.

[0124] However, the composition for a light-emitting device has a specific molecular structure as shown in the first embodiment. It is possible to obtain it by mixing compounds that are specific to the substance, so it is not possible to mix multiple unspecified compounds and produce one vapor. Even if the compounds are evaporated in preparation for the deposition source, the deposition rate is about the same as when co-evaporation is performed in preparation for different deposition sources for each compound. It is difficult to obtain a film of the desired quality. For example, some of the mixed materials may be deposited first. The composition may change, and the quality of the film (composition, film thickness, etc.) may not be obtained as desired. Furthermore, in the mass production process, the specifications of the equipment become complicated and the This also causes inconveniences such as increased maintenance work.

[0125] In this way, the composition for a light-emitting device according to one embodiment of the present invention is used as a part of the EL layer or the light-emitting layer. The use of this technology will enable high productivity of light-emitting devices while maintaining their device characteristics and reliability. This is preferable because it makes it possible to fabricate a vice.

[0126] The EL layers (103, 103a, 103b) of the light-emitting device shown in this embodiment are The functional layers (hole injection layers (111, 111a, 111b), hole transport layers (112, 113)) 2a, 112b), light emitting layer (113, 113a, 113b, 113c), electron transport layer (1 14, 114a, 114b), electron injection layer (115, 115a, 115b) and charge generation layer (104, 104a, 104b)) are not limited to the above-mentioned materials, and other Any material can be used in combination as long as it satisfies the functions of each layer. Examples include high molecular weight compounds (oligomers, dendrimers, polymers, etc.), medium molecular weight compounds ( Compounds in the intermediate range between low molecular weight and high molecular weight: molecular weight 400 to 4000), inorganic compounds (quantum dots) As the quantum dot material, colloidal quantum dots can be used. Dot materials, alloy-type quantum dot materials, core-shell-type quantum dot materials, core-type quantum dots Materials etc. can be used.

[0127] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments. It shall be possible.

[0128] (Embodiment 2) In this embodiment, a light-emitting device which is one embodiment of the present invention will be described.

[0129] By applying the element configuration of the light-emitting device according to one embodiment of the present invention, It is possible to manufacture an active matrix type light emitting device or a passive matrix type light emitting device. Active matrix light-emitting devices are made by combining light-emitting devices and transistors (FETs). Therefore, it is possible to use a passive matrix light emitting device and an active matrix light emitting device. Any of the light-emitting devices is included in one embodiment of the present invention. The light-emitting devices described in other embodiments can be applied to the light-emitting device.

[0130] In this embodiment mode, an active matrix light-emitting device will be described with reference to FIG.

[0131] 7A is a top view showing the light emitting device, and FIG. 7B is a cut view of FIG. 7A taken along the chain line A-A'. The active matrix light emitting device is provided on a first substrate 301. A pixel section 302, a driving circuit section (source line driving circuit) 303, and a driving circuit section (gate line driving circuit) The pixel section 302 and the driver circuit section (303, 304) a, 304b) are formed by a sealing material 305 between the first substrate 301 and the second substrate 306. It is sealed in between.

[0132] Furthermore, lead wiring 307 is provided on the first substrate 301. is electrically connected to the FPC 308, which is an external input terminal. An external signal (for example, a video signal, a clock signal) is input to the driving circuit unit (303, 304a, 304b). The FPC308 also transmits signals such as lock signals, start signals, and reset signals, as well as electrical potentials. A printed wiring board (PWB) may be attached. The state in which B is attached is included in the light emitting device.

[0133] Next, a cross-sectional structure is shown in FIG. 7B.

[0134] The pixel section 302 includes a FET (switching FET) 311, a FET (current control FET) 312, and a plurality of pixels having a first electrode 313 electrically connected to the FET 312. The number of FETs that each pixel has is not particularly limited, and It can be provided as needed.

[0135] The FETs 309, 310, 311, and 312 are not particularly limited, and may be, for example, staggered. In addition, top gate and bottom gate transistors can be used. The transistor structure may be a Tom-gate type or the like.

[0136] The semiconductor crystals that can be used for these FETs 309, 310, 311, and 312 are The crystallinity is not particularly limited, and may be an amorphous semiconductor, a crystalline semiconductor (microcrystalline semiconductor, Any of polycrystalline semiconductors, single-crystalline semiconductors, and semiconductors having crystalline regions in part may be used. It is noted that the use of a crystalline semiconductor can suppress the deterioration of transistor characteristics. This is preferable.

[0137] In addition, these semiconductors include, for example, elements of Group 14, compound semiconductors, and oxide semiconductors. , organic semiconductors, etc. can be used. Typically, semiconductors containing silicon, gallium, A semiconductor containing arsenic, an oxide semiconductor containing indium, or the like can be used.

[0138] The driving circuit section 303 includes an FET 309 and an FET 310. The ET310 is a circuit containing transistors of one polarity (either N-type or P-type only). It may be formed by a CMOS circuit including N-type transistors and P-type transistors. Alternatively, a configuration may be adopted in which a driving circuit is provided externally.

[0139] The end of the first electrode 313 is covered with an insulator 314. , organic compounds such as negative photosensitive resins and positive photosensitive resins (acrylic resins), and acids Inorganic compounds such as silicon nitride, silicon oxynitride, and silicon nitride can be used. The upper or lower end of the edge 314 preferably has a curved surface. As a result, the coverage of the film formed on the insulator 314 can be improved.

[0140] An EL layer 315 and a second electrode 316 are stacked on the first electrode 313. 315 is a light-emitting layer, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, etc. Has.

[0141] The configuration of the light-emitting device 317 shown in this embodiment is the same as that described in the other embodiments. Although not shown here, the second electrode 316 may be made of an external material. It is electrically connected to the FPC 308 which is the input terminal.

[0142] In addition, although only one light-emitting device 317 is shown in the cross-sectional view of FIG. 7B, the pixel portion 3 In the pixel section 02, a plurality of light-emitting devices are arranged in a matrix. 302 is a light-emitting device that can selectively emit three types of light (R, G, B). This allows the formation of a light-emitting device capable of full-color display. In addition to the light-emitting device that can emit light of B), for example, white (W), yellow (Y), A light-emitting device that emits magenta (M), cyan (C), etc. may be formed. For example, a light-emitting device that emits three types of light (R, G, B) can emit several of the above types of light. By adding a light-emitting device, it is possible to obtain effects such as improved color purity and reduced power consumption. In addition, by combining it with a color filter, a full-color display is possible. The color filters may be red (R), green (G), blue ( B), cyan (C), magenta (M), yellow (Y), etc. can be used.

[0143] FETs (309, 310, 311, 312) on the first substrate 301 and light-emitting devices 31 7 is a process for bonding the second substrate 306 and the first substrate 301 together with a sealing material 305. As a result, the space 3 surrounded by the first substrate 301, the second substrate 306, and the sealing material 305 is The space 318 is filled with an inert gas (nitrogen, argon, etc.). ) or organic matter (including the sealant 305).

[0144] The sealing material 305 can be made of epoxy resin or glass frit. It is preferable to use a material that is as impermeable to moisture and oxygen as possible for the insulating material 305. The second substrate 306 may be made of the same material as the first substrate 301. Therefore, it is possible to use various substrates as described in other embodiments as appropriate. In addition to glass and quartz substrates, FRP (Fiber-Reinforced Plastics) is also used as the substrate. d Plastics), PVF (Polyvinyl Fluoride), Polyester or Acrylic A plastic substrate made of a glass frit or the like can be used as a sealing material. When using a glass substrate, the first substrate 301 and the second substrate 306 are preferably made of glass from the viewpoint of adhesiveness. Preferably it is a substrate.

[0145] In this manner, an active matrix light emitting device can be obtained.

[0146] In addition, when an active matrix light emitting device is formed on a flexible substrate, The FET and the light emitting device may be formed directly, or the FET and the light emitting device may be formed on a separate substrate having a release layer. After forming the optical device, the FET and the light-emitting device are separated by applying heat, force, laser irradiation, etc. The substrate may be peeled off at a peeling layer and then transferred onto a flexible substrate. For example, inorganic films such as a tungsten film and a silicon oxide film may be laminated, or a material such as polyimide may be used. A flexible substrate may be formed on the substrate. In addition to the substrates that can be used, paper substrates, cellophane substrates, aramid film substrates, polyimide film substrates, Film substrate, cloth substrate (natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester) polyester) or recycled fibers (acetate, cupra, rayon, recycled polyester) The substrates include leather and rubber. This allows for superior durability and heat resistance, as well as lighter weight and thinner construction.

[0147] The driving of the light emitting device included in the active matrix light emitting device is performed by A structure that emits light in pulses (for example, using frequencies such as kHz or MHz) and is used for display. The light-emitting device formed using the organic compound has excellent frequency characteristics. Therefore, the driving time of the light emitting device can be shortened, and power consumption can be reduced. In addition, heat generation is suppressed as the driving time is shortened, which reduces the deterioration of the light-emitting device. It is also possible.

[0148] Note that the structure shown in this embodiment mode may be used in appropriate combination with structures shown in other embodiment modes. It is possible.

[0149] (Embodiment 3) In this embodiment, a light-emitting device according to one embodiment of the present invention We will explain examples of various electronic devices and automobiles that have been completed using light-emitting devices with chairs. The light-emitting device is mainly applied to a display portion in the electronic device described in this embodiment mode. It can be used.

[0150] The electronic device shown in FIGS. 8A to 8E includes a housing 7000, a display unit 7001, a speaker 7003, and a , LED lamp 7004, operation keys 7005 (including a power switch or an operation switch) , connection terminal 7006, sensor 7007 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed , distance, light, liquid, magnetic, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, (including those that measure radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays), Microphone 7008, etc.

[0151] FIG. 8A shows a mobile computer, which includes, in addition to the components mentioned above, a switch 7009, infrared port 7010, etc.

[0152] FIG. 8B shows a portable image playback device (e.g., a DVD playback device) equipped with a recording medium. In addition to the above, it may have a second display unit 7002, a recording medium reading unit 7011, etc. can.

[0153] FIG. 8C shows a digital camera with a television receiving function, which includes an antenna 70 in addition to the above. 14, a shutter button 7015, an image receiving unit 7016, etc.

[0154] 8D shows a mobile information terminal. The mobile information terminal displays information on three or more screens of a display unit 7001. Here, information 7052, information 7053, and information 7054 are different from each other. For example, the user may place the mobile information terminal in the breast pocket of their clothes. When the mobile information terminal is stored, confirm the information 7053 displayed in a position that can be observed from above. The user can check the display without taking the mobile information terminal out of his pocket. For example, the user can determine whether to accept a call.

[0155] FIG. 8E shows a portable information terminal (including a smartphone), which includes a housing 7000 and a display unit 700. 1, operation keys 7005, etc. The portable information terminal may have a speaker 90 03, a connection terminal 7006, a sensor 9007, etc. may be provided. It can display text and image information on its multiple sides. Here, three icons are displayed. In addition, information 7051 indicated by a dashed rectangle is displayed on the display unit 7001. Examples of information 7051 include email, SNS, and telephone Notifications of incoming calls, emails, SNS etc., subject, sender name, date and time, time, battery The remaining battery level, antenna reception strength, etc. Or, in the location where information 7051 is displayed may display icon 7050, etc.

[0156] FIG. 8F shows a large television set (also called a television or television receiver). 7000, a housing 7001, a display unit 7001, and the like. The housing 7000 is supported by a bracket 7018. The operation can be performed by a separate remote control unit 7111 or the like. The display unit 7001 may be provided with a touch sensor, and the operation may be performed by touching the display unit 7001 with a finger or the like. The remote control unit 7111 displays the information output from the remote control unit 7111. The remote control 7111 may have an operation key or a touch panel. The panel allows the user to operate the channel and volume, and the information displayed on the display unit 7001 You can manipulate the images.

[0157] The electronic devices shown in Figures 8A to 8F can have a variety of functions. Functions for displaying information (still images, videos, text images, etc.) on the display, touch panel function, Functions that display calendars, dates, or times, etc., and various software (programs) It has a function to control processing by wireless communication, and a function to control various computer networks by using wireless communication. Functions for connecting to a network, and sending or receiving various data using wireless communication functions A function of reading out a program or data recorded on a recording medium and displaying it on a display unit; Furthermore, in an electronic device having a plurality of display units, it is possible to A function that mainly displays image information on one display and mainly displays text information on another display. Alternatively, a stereoscopic image can be displayed by displaying images that take parallax into consideration on multiple displays. Furthermore, in electronic devices having an image receiving unit, it is possible to display still images. Functions for taking photos, taking videos, correcting captured images automatically or manually, The function to save the captured image to a recording medium (external or built-in to the camera), and the function to display the captured image on the display The electronic devices shown in FIGS. 8A to 8F can have functions such as displaying the The functions that can be performed are not limited to these, and various other functions can be performed.

[0158] FIG. 8G shows a wristwatch-type mobile information terminal that can be used as, for example, a smart watch. This wristwatch-type mobile information terminal is made up of a housing 7000, a display unit 7001, and operation buttons. 7022, 7023, connection terminal 7024, band 7025, microphone 7026, The display unit 7001 has a curved display surface. This allows the display to be displayed along the curved display surface. For example, hands-free calling is possible through mutual communication with a wireless headset. The connection terminal 7024 allows data to be transmitted between other information terminals and for charging. The charging operation can also be performed by wireless power supply.

[0159] The display unit 7001 mounted on the housing 7000, which also serves as a bezel, has a non-rectangular display area. The display unit 7001 has an icon 7027 that indicates the time, other icons 702 8, etc. The display unit 7001 is equipped with a touch sensor (input device). The display may be a touch panel (input / output device) mounted thereon.

[0160] The smart watch shown in FIG. 8G can have various functions. Functions for displaying various information (still images, videos, text images, etc.) on the display, touch panel function Functions such as displaying calendars, dates, or times, and various software (programs) a function for controlling processing by wireless communication, a function for controlling various computers by wireless communication, Functions for connecting to a network and transmitting or receiving various data using wireless communication functions Function: A function to read out a program or data recorded on a recording medium and display it on the display unit. It can have the ability, etc.

[0161] In addition, a speaker, a sensor (force, displacement, position, velocity, acceleration, angular velocity) Degrees, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, electricity Includes functions to measure pressure, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared. ), a microphone, etc.

[0162] Note that the light-emitting device which is one embodiment of the present invention can be used for each display portion of the electronic devices described in this embodiment. This makes it possible to realize electronic devices with long life.

[0163] Furthermore, as an electronic device to which a light-emitting device is applied, a foldable electronic device as shown in FIGS. 9A to 9C is also available. FIG. 9A shows a mobile information terminal 9310 in an unfolded state. Also, Figure 9B shows the process of changing from one of the unfolded state and the folded state to the other. 9C shows the mobile information terminal 9310 in a folded state. The portable information terminal 9310 is highly portable when folded. When unfolded, the seamless, large display area provides excellent visibility of the display.

[0164] The display unit 9311 is supported by three housings 9315 connected by hinges 9313. The display unit 9311 is a touch panel (input / output) equipped with a touch sensor (input device). The display unit 9311 may be connected to two housings via a hinge 9313. By bending the space between the terminals 9315, the portable information terminal 9310 can be folded from the unfolded state. The light-emitting device of one embodiment of the present invention can be reversibly transformed into a display state. The display portion 931 can be used for the display unit 9311. In addition, a long-life electronic device can be realized. The display area 9312 in FIG. 1 is located on the side of the portable information terminal 9310 in the folded state. The display area 9312 is a display area where information icons and frequently used apps and programs are displayed. You can display shortcuts for programs, check information, and launch apps. It can be done smoothly.

[0165] 10A and 10B show an automobile to which a light emitting device is applied. The device can be integrated into a vehicle. Outer lights 5101 (including the rear of the vehicle), tire wheels 5102, and doors 5103 It can be applied to a part or the whole of the car. Part 5104, handle 5105, shift lever 5106, seat 5107, inner It can be applied to rearview mirrors 5108, windshields 5109, etc. It may also be applied to a portion of a glass window.

[0166] In this manner, an electronic device or an automobile to which the light-emitting device of one embodiment of the present invention is applied can be obtained. In this case, it is possible to realize an electronic device with a long life. The sub-devices and automobiles are not limited to those shown in this embodiment, but can be applied in all fields. It is possible.

[0167] Note that the structure described in this embodiment mode may be used in appropriate combination with structures described in other embodiment modes. It is possible.

[0168] (Fourth embodiment) In this embodiment, a light-emitting device according to one embodiment of the present invention or a light-emitting device which is a part thereof will be described. The lighting device manufactured by applying the above and its application examples will be described. This will be explained using FIG. 11.

[0169] 11A and 11B show examples of cross-sectional views of a lighting device. Note that FIG. 11A shows a case where light is directed toward the substrate side. The bottom emission type lighting device extracts light from the encapsulation substrate side. It is a top-emission lighting device.

[0170] The lighting device 4000 shown in FIG. 11A has a light-emitting device 4002 on a substrate 4001 . The light-emitting device 4002 further includes a substrate 4003 having an uneven surface on the outer side of the substrate 4001. The device includes a first electrode 4004 , an EL layer 4005 , and a second electrode 4006 .

[0171] The first electrode 4004 is electrically connected to the electrode 4007, and the second electrode 4006 is electrically connected to the electrode 4008. 008. An auxiliary wiring electrically connected to the first electrode 4004. An insulating layer 4010 may be formed on the auxiliary wiring 4009. There are.

[0172] The substrate 4001 and the sealing substrate 4011 are bonded together with a sealant 4012. A desiccant 4013 is provided between the sealing substrate 4011 and the light-emitting device 4002. It is preferable that the substrate 4003 has the unevenness shown in FIG. The extraction efficiency of the light generated in the source 4002 can be improved.

[0173] The lighting device 4200 of Figure 11B has a light emitting device 4202 on a substrate 4201. Device 4202 includes a first electrode 4204, an EL layer 4205, and a second electrode 4206. Has.

[0174] The first electrode 4204 is electrically connected to the electrode 4207, and the second electrode 4206 is electrically connected to the electrode 4208. 208. The auxiliary wiring 4206 is electrically connected to the second electrode 4206. An insulating layer 4210 may be provided under the auxiliary wiring 4209. stomach.

[0175] The substrate 4201 and the sealing substrate 4211 having projections and recesses are bonded with a sealant 4212. In addition, a barrier film 4213 and a planarization film 4214 are formed between the sealing substrate 4211 and the light-emitting device 4202. 214 may be provided. Note that the sealing substrate 4211 has irregularities as shown in FIG. This can improve the extraction efficiency of light generated in the light-emitting device 4202.

[0176] An example of the application of these lighting devices is a ceiling light for indoor lighting. There are two types of ceiling lights: direct ceiling mounted and recessed ceiling lights. Such a lighting device is constructed by combining a light-emitting device with a housing and a cover.

[0177] Other applications include footlights that can illuminate the floor and increase safety underfoot. It is also possible to use a foot lamp in a bedroom, on stairs, or in a hallway. In this case, the size and shape can be changed appropriately according to the size and structure of the room. It is also possible to combine the device with a support stand to create a stationary lighting device. .

[0178] It can also be used as a sheet-type lighting device (sheet-type lighting). The lighting is attached to the wall, so it doesn't take up much space and can be used for a wide range of purposes. It is also easy to make it larger, and it can be used on curved walls and enclosures.

[0179] In addition to the above, a light-emitting device according to one embodiment of the present invention may be attached to a part of furniture installed in a room. By applying a light-emitting device, which is a part of the design, we aim to create a lighting device that also functions as furniture. As described above, various lighting devices using the light-emitting device according to one embodiment of the present invention can be realized. Obtained.

[0180] In addition, a light-emitting device according to one embodiment of the present invention or a light-emitting device which is a part of the light-emitting device may be used to manufacture a light-emitting device. Examples of applications include light sources for face recognition sensors, fingerprint recognition sensors, and human detection sensors in dark places. Light source for sensors, light source for human vein sensors, sensors for measuring saturated blood oxygen concentration in living bodies and light sources for sensors that measure the concentration of oxygenated hemoglobin. The present invention also takes advantage of the characteristics of a light-emitting device according to one embodiment of the present invention or a light-emitting device that is a part of the light-emitting device. The application examples are considered to be included as an aspect of the present invention.

[0181] The structure described in this embodiment mode may be used in appropriate combination with structures described in other embodiments. It is possible. [Example]

[0182] In this example, a light-emitting device according to one embodiment of the present invention was manufactured, and the obtained device characteristics were The light-emitting device 1 fabricated in this example has a maximum peak wavelength of the emission spectrum of It has a microcavity structure tuned to emit light around 800 nm. The light-emitting device 2 has a maximum peak wavelength of 855 nm in the emission spectrum. A light-emitting device having a microcavity structure adjusted to obtain light emission having a wavelength near m. It's a vice.

[0183] The specific element structure and manufacturing method of the above light-emitting device will be described below. The element structure of the light-emitting device explained in this example is shown in FIG. The chemical formulas of the materials used in this example are shown in Table 2.

[0184] [Table 2]

[0185] [ka]

[0186] <Fabrication of light-emitting devices> <Fabrication of Light-Emitting Device 1 and Light-Emitting Device 2> The light emitting device shown in this example is a first electrode formed on a substrate 900 as shown in FIG. On the electrode 901, a hole injection layer 911, a hole transport layer 912, a light emitting layer 913, an electron transport layer 914, An electron injection layer 915 is sequentially laminated, and a second electrode 903 is laminated on the electron injection layer 915. It has a structure.

[0187] First, a first electrode 901 was formed on a substrate 900. The electrode area was 4 mm 2 (2mm x 2 The thickness of the first electrode 901 was 1 / 2 mm. The reflective electrode is an alloy film of silver (Ag), palladium (Pd) and copper (Cu) (Ag-Pd -Cu(APC) film) was formed by sputtering to a thickness of 100 nm, and then a transparent Indium tin oxide containing silicon oxide (ITSO) was deposited as an electrode by sputtering. The film was formed to a thickness of 10 nm.

[0188] Here, as a pretreatment, the surface of the substrate is washed with water, baked at 200°C for 1 hour, and then UV- The treatment was carried out for 370 seconds. -4 Vacuum steaming with the inside pressure reduced to about Pa The substrate was introduced into the vacuum deposition apparatus, and vacuum baked at 170°C for 30 minutes in the heating chamber of the vacuum deposition apparatus. After the formation, the substrate was allowed to cool for about 30 minutes.

[0189] Next, a hole injection layer 911 was formed on the first electrode 901. The hole injection layer 911 was formed by vacuum evaporation. 1 x 10 -4 After reducing the pressure to 100 Pa, 1,3,5-tri(dibenzothiophene-4 -yl)benzene (abbreviation: DBT3P-II) and molybdenum oxide to form DBT3P-II : molybdenum oxide = 2:1 (mass ratio), and in the case of light-emitting device 1, the film thickness was 25 nm. In the case of light-emitting device 2, the film thickness was 30 nm. Successful.

[0190] Next, a hole transport layer 912 was formed on the hole injection layer 911. The hole transport layer 912 was formed of N-( 1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole- 3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PC The film was formed by vapor deposition using BBiF to a thickness of 20 nm.

[0191] Next, a light-emitting layer 913 was formed on the hole-transporting layer 912 .

[0192] The light-emitting layer 913 is made of 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl ]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II) and PCBs In addition to BiF, bis{4,6-dimethyl-2-[ 3-(3,5-dimethylphenyl)-2-benzo[g]quinoxalinyl-κN]phenyl -κC}(2,2,6,6-tetramethyl-3,5-heptanedionato-κ 2 O,O') Iridium (III) (abbreviation: [Ir(dmdpbq)2(dpm)]) was used, and the weight ratio 2mDBTBPDBq-II:PCBBiF:[Ir(dmdpbq)2(dpm)] The layers were co-deposited so that the ratio of the layers was 0.7:0.3:0.1. The film thickness was 40 nm.

[0193] Next, an electron transport layer 914 was formed on the light emitting layer 913 .

[0194] The electron transport layer 914 is made of an electron transport material, 2mDBTBPDBq-II, with a thickness of 20 nm. After that, the electron transport material 2,9-bis(naphthalene 2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) The film thickness was 75 nm for light-emitting device 1 and 85 nm for light-emitting device 2. The layers were formed by vapor deposition so that the thickness of each layer was m.

[0195] Next, an electron injection layer 915 was formed on the electron transport layer 914. Note that the electron injection layer 915 was Lithium fluoride (LiF) was used and was formed by vapor deposition to a film thickness of 1 nm.

[0196] Next, a second electrode 903 was formed on the electron injection layer 915. The second electrode 903 was made of silver (A The volume ratio of SiO2 to magnesium (Mg) was 1:0.1, and the film thickness was 30 nm. In this example, the second electrode 903 functions as a cathode. The electrode is a semi-transparent and semi-reflective electrode having both a function of reflecting light and a function of transmitting light. The light emitting device shown in the example is a top emission type in which light is extracted from the second electrode 903. Furthermore, an organic cap layer 904 is formed on the second electrode 903. The organic cap layer 904 has a refractive index of 1.7 or more. It is preferable to use the above material, and here DBT3P-II is formed by vapor deposition to a thickness of 100 nm. Ta.

[0197] By the above steps, a light-emitting device is formed on the substrate 900, in which an EL layer is sandwiched between a pair of electrodes. The hole injection layer 911, the hole transport layer 912, and the light emitting layer 913 described in the above steps were formed. The electron transport layer 914 and the electron injection layer 915 function to form the EL layer in one embodiment of the present invention. In addition, the deposition process in the above-mentioned manufacturing method is all performed by the resistance heating method. The method was used.

[0198] The light-emitting device fabricated as described above is sealed with another substrate (not shown). When sealing using another substrate (not shown), the device is sealed in a glove box with a nitrogen atmosphere. In the above, another substrate (not shown) coated with a sealant that is hardened by ultraviolet light is placed on the substrate 900. The substrate 900 is fixed on the substrate 900 so that the sealant adheres to the periphery of the light-emitting device formed on the substrate 900. The plates were bonded together. During sealing, 365 nm ultraviolet light was applied at 6 J / cm. 2 Irradiate the sealant to harden it. The sealant was stabilized by heating at 80°C for 1 hour.

[0199] <Operating characteristics of light-emitting devices> The operating characteristics of each light-emitting device were measured. The current density-radiant emittance characteristics of each light-emitting device are shown in Figure 13. Voltage-current density characteristics are shown in Fig. 14, current density-external quantum efficiency characteristics are shown in Fig. 15, and voltage-radiant emittance characteristics are shown in Fig. 16. The properties of the electrodes are shown in Figure 16. Table 3 below also shows the properties of the electrodes at a current density of 10 mA / cm 2 Nearby The main initial characteristics of each light-emitting device are shown below. The radiant emittance, radiant flux, and external quantum efficiency are The light distribution characteristics of the device were assumed to be Lambertian type, and the calculation was performed using radiance.

[0200] [Table 3]

[0201] In addition, each light-emitting device is supplied with 10mA / cm 2 The EL emission spectrum when a current is applied at a current density of The emission spectrum was measured using a near-infrared spectroradiometer (SR-NIR In FIG. 17, each light-emitting device is included in the light-emitting layer 913. The organometallic complex [Ir(dmdpbq)2(dp m)], but each light-emitting device has its own optically tuned structure. , Light-emitting device 1 emits light at around 800 nm, and light-emitting device 2 emits light at around 855 nm. Each light-emitting device has an EL element with an emission peak narrowed by the microcavity effect. The emission spectrum of the organometallic complex, [Ir(dmdpbq)2(dpm The emission spectrum of the compound (C100) is shown in Figure 18. The emission spectrum was measured using an absolute PL quantum yield meter. Using a measuring device (Hamamatsu Photonics C11347-01), dichloromethane was measured under a nitrogen atmosphere. Place the deoxygenated bromomethane solution (0.010mmol / L) in a quartz cell, seal it, and measure at room temperature. was carried out.

[0202] Furthermore, it can be seen from FIGS. 14 and 16 that each light-emitting device is driven at a low voltage. Furthermore, it can be seen from FIG. 15 that each light-emitting device emits light with high efficiency.

[0203] The light-emitting device 1 exhibits light emission with a strong peak intensity and exhibits particularly high luminous efficiency. As described above, according to one embodiment of the present invention, it is possible to obtain an emission element having a strong peak intensity and high emission efficiency. The light-emitting device 2 can be obtained by using the organic EL element contained in the light-emitting layer 913. The peak wavelength is higher than the emission peak wavelength of the metal complex [Ir(dmdpbq)2(dpm)]. The EL emission spectrum has a long wavelength. A light-emitting device exhibiting an EL spectrum with a peak wavelength longer than the peak wavelength of the light emitted from the device is can be obtained.

[0204] In addition, each light-emitting device is supplied with 2.5mA / cm 3 EL emission spectrum when current is passed at a current density of The viewing angle dependence of the spectrum is shown in Figure 19. The EL emission spectrum was measured using a PMA-12 ( Hamamatsu Photonics) was used.

[0205] In Figure 19, light-emitting device 1 exhibits the strongest emission peak intensity when measured from the front (0°). As the angle increases from the front (0°) to the side (90°), the emission peak intensity weakens. On the other hand, it was confirmed that the light emitting device 2 tends to be more reflective when viewed from the side than from the front (0°). The emission peak intensity tends to be greatest when measured at an angle of 40° to the surface direction. Confirmed.

[0206] In addition, from the EL emission spectrum shown in Figure 19, the ratio of the number of photons to the Lambertian The calculated values ​​were 39.3% for light-emitting device 1 and 108.4% for light-emitting device 2. This photon number ratio was multiplied by the assumed external quantum efficiency for the Lambertian type shown in Table 3. By combining these, the external quantum efficiency of the light-emitting device can be calculated as an accurate value taking into account the viewing angle. The results are 3.9% for device 1 and 6.1% for device 2. Therefore, the Lambertian assumption From the relationship between the external quantum efficiency at the front and the external quantum efficiency taking into account the viewing angle, the luminous intensity at the front is It can be seen that Device 1 has a stronger luminous intensity, and Light-emitting Device 2 has a stronger luminous intensity in total luminous flux.

[0207] The refractive index of DBT3P-II used in the organic cap layer 904 was determined by JA Woolam Measurements were taken at room temperature using a rotating compensator type multi-angle high-speed spectroscopic ellipsometer (M-2000U) manufactured by Epson Corporation. As a result, the ordinary refractive index (OR) of DBT3P-II at a wavelength of 633 nm was The refractive index is 1.80 and the extraordinary refractive index is 1.73. there were.

[0208] Furthermore, reliability tests were conducted on the above light-emitting devices 1 and 2. The measurement results are shown in Figure 20. In 20, the vertical axis indicates the normalized intensity (%) when the initial luminescence intensity is set to 100%, and the horizontal axis indicates the device operating time (h). The reliability test was performed at a current density of 75 mA / cm 2 Set in The light-emitting device was driven.

[0209] The results of the reliability test showed that both light-emitting devices 1 and 2 exhibited high reliability. This was due to the fact that the organometallic complex, [Ir( dmdpbq)2(dpm)] in the light-emitting layer of a light-emitting device.

[0210] (Reference synthesis example 1) In this Reference Synthesis Example, the organometallic complex used in Example 1, bis{4,6-dimethyl-2-[3 -(3,5-dimethylphenyl)-2-benzo[g]quinoxalinyl-κN]phenyl- κC}(2,2,6,6-tetramethyl-3,5-heptanedionato-κ 2 O,O')I Regarding the synthesis of Ir(III) (abbreviation: [Ir(dmdpbq)2(dpm)]) I will explain.

[0211] [ka]

[0212] Step 1: 2,3-bis-(3,5-dimethylphenyl)-2-benzo[g]quinoxazone Synthesis of Sarin (abbreviation: Hdmdpbq) First, we synthesized Hdmdpbq. 3,3',5,5'-tetramethylbenzyl 3.20 g, 1.97 g of 2,3-diaminonaphthalene, and 60 mL of ethanol were added to a The contents were placed in a flask, the inside was replaced with nitrogen, and the contents were stirred at 90°C for 7.5 hours. The solvent was distilled off, and the residue was then subjected to silica gel column chromatography using toluene as a developing solvent. The product was purified by filtration to obtain the desired product (yellow solid, yield 3.73 g, 79%). The synthesis scheme is shown in (a-1).

[0213] [ka]

[0214] Nuclear magnetic resonance spectroscopy of the yellow solid obtained in step 1 ( 1 The analysis results by H-NMR are shown below. The results are shown below. From these results, it was found that Hdmdpbq was obtained.

[0215] of the obtained material 1 The 1 H NMR data is shown below. 1 H-NMR.δ(CD2Cl2): 2.28(s,12H),7.01(s,2H),7.16(s,4H),7.56-7 .58(m,2H),8.11-8.13(m,2H),8.74(s,2H).

[0216] Step 2: Di-μ-chloro-tetrakis{4,6-dimethyl-2-[3-(3,5- Dimethylphenyl)-2-benzo[g]quinoxalinyl-κN]phenyl-κC}diyl Synthesis of Ir(III) (abbreviation: [Ir(dmdpbq)2Cl]2) Next, 15 mL of 2-ethoxyethanol, 5 mL of water, and Hdmdpbq1 obtained in step 1 were added. 0.81g, and iridium chloride hydrate (IrCl3·H2O) (Furuya Metal Co., Ltd.) 0. 66 g was placed in a recovery flask equipped with a reflux condenser, and the atmosphere in the flask was replaced with argon. The mixture was then irradiated with microwaves (2.45 GHz, 100 W) for 2 hours to allow the reaction to proceed. The resulting residue was then suction filtered and washed with methanol to obtain the desired product (black solid, yield 1. 76g, yield 81%). The synthesis scheme for step 2 is shown in (a-2).

[0217] [ka]

[0218] Step 3: Synthesis of [Ir(dmdpbq)2(dpm)] Next, 20 mL of 2-ethoxyethanol and [Ir(dmdpbq)C l]21.75g, dipivaloylmethane (abbreviation: Hdpm) 0.50g, and sodium carbonate 0.95 g of sodium was placed in a recovery flask equipped with a reflux condenser, and the atmosphere in the flask was replaced with argon. Then, microwaves (2.45 GHz, 100 W) were irradiated for 3 hours.

[0219] The obtained residue was suction filtered with methanol, and then washed with water and methanol. The compound was purified by silica gel column chromatography using dichloromethane as a developing solvent. After that, the target product was obtained by recrystallization in a mixed solvent of dichloromethane and methanol. The obtained dark green solid (0.41 g) was added to The sublimation purification was carried out by rain sublimation. The conditions for the sublimation purification were a pressure of 2.7 Pa and Al. The dark green solid was heated at 300°C while Gongas was flowing at a flow rate of 10.5 mL / min. After sublimation purification, a dark green solid was obtained in 78% yield. The synthesis scheme for step 3 is shown in (a-3). show.

[0220] [ka]

[0221] Nuclear magnetic resonance spectroscopy of the dark green solid obtained in step 3 ( 1 H-NMR) The results are shown below. From these results, it was found that [Ir(dmdpbq)2(dpm)] was obtained. It was.

[0222] of the obtained material 1 The 1 H NMR data is shown below. 1 H-NMR.δ(CD2Cl2):0.75(s,18H),0.97(s,6H) ,2.01(s,6H),2.52(s,12H),4.86(s,1H),6.39( s,2H),7.15(s,2H),7.31(s,2H),7.44-7.51(m, 4H),7.80(d,2H),7.86(s,4H),8.04(d,2H),8.4 2(s,2H),8.58(s,2H). [Explanation of symbols]

[0223] 101: first electrode, 102: second electrode, 103: EL layer, 103a, 103b: EL layer, 104: charge generation layer, 105: organic cap layer, 111, 111a, 111b: hole Injection layers 112, 112a, 112b: hole transport layers; 113, 113a, 113b: light emitting layers Layer, 114, 114a, 114b: Electron transport layer, 115, 115a, 115b: Electron injection Layer, 200R, 200G, 200B: optical path, 201: first substrate, 202: transistor FET, 203R, 203G, 203B, 203W: Light-emitting devices, 204:E L layer, 205: second substrate, 206R, 206G, 206B: color filters, 206R ', 206G', 206B': color filters, 207: first electrode, 208: second electrode Pole, 209: black layer (black matrix), 210R, 210G: conductive layer, 301: First substrate, 302: pixel section, 303: driver circuit section (source line driver circuit), 304a, 3 04b: drive circuit section (gate line drive circuit), 305: seal material, 306: second substrate, 3 07: Wiring, 308: FPC, 309: FET, 310: FET, 311: FE T, 312: FET, 313: first electrode, 314: insulator, 315: EL layer, 316: Second electrode, 317: light-emitting device, 318: space, 900: substrate, 901: first electrode 902: EL layer, 903: second electrode, 904: organic cap layer, 911: hole injection layer , 912: hole transport layer, 913: light emitting layer, 914: electron transport layer, 915: electron injection layer, 4 000: lighting device, 4001: substrate, 4002: light-emitting device, 4003: substrate, 400 4: first electrode, 4005: EL layer, 4006: second electrode, 4007: electrode, 4008 : electrode, 4009: auxiliary wiring, 4010: insulating layer, 4011: sealing substrate, 4012: sealing material, 4013: desiccant, 4200: lighting device, 4201: substrate, 4202: light-emitting device 4204: first electrode; 4205: EL layer; 4206: second electrode; 4207: electrode , 4208: electrode, 4209: auxiliary wiring, 4210: insulating layer, 4211: sealing substrate, 42 12: Sealant, 4213: Barrier film, 4214: Flattening film, 5101: Light, 51 02: Wheel, 5103: Door, 5104: Display, 5105: Handle, 5106: Shift lever, 5107: Seat, 5108: Inner rearview mirror, 5109 : Front glass, 7000: Housing, 7001: Display unit, 7002: Second display unit, 700 3: Speaker, 7004: LED lamp, 7005: Operation keys, 7006: Connection terminal, 7 007: Sensor, 7008: Microphone, 7009: Switch, 7010: Infrared Po port, 7011: recording medium reading unit, 7014: antenna, 7015: shutter button, 7016: Image receiving unit, 7018: Stand, 7022, 7023: Operation buttons, 7024 :Connection terminal, 7025:Band, 7026:Microphone, 7029:Sensor, 703 0: Speaker, 7052, 7053, 7054: Information, 9310: Mobile information terminal, 931 1: Display unit, 9312: Display area, 9313: Hinge, 9315: Housing

Claims

1. 1. A light-emitting device having a light-emitting layer between a first electrode and a second electrode, the first electrode is a reflective electrode, the second electrode is a semi-transmissive semi-reflective electrode, the first electrode, or both the first electrode and the second electrode, comprises at least one of gold (Au), silver (Ag), and copper (Cu); the second electrode has a thickness of 30 nm or more and 60 nm or less; the light-emitting layer contains a light-emitting substance having an emission peak in a wavelength range of 750 nm or more and 1000 nm or less, the light-emitting device has an emission peak at a wavelength longer than the emission peak of the light-emitting material; the luminescent material is any one of an iridium complex, a platinum complex, and a rare earth metal complex; Light-emitting device.

2. In claim 1, the second electrode has an organic layer on a surface opposite to the surface facing the first electrode, the organic layer is in contact with the second electrode; The organic layer has a refractive index of 1.7 or greater.

3. In claim 2, The organic layer has a thickness of 80 nm or more and 160 nm or less.

4. In any one of claims 1 to 3, The light-emitting device, wherein the light-emitting substance is an iridium complex represented by general formula (G1): 【Chemistry 1】 (In the formula, R １ ~R １１ each independently represents hydrogen or an alkyl group having 1 to 6 carbon atoms; R １ ~R ４ At least two of R represent alkyl groups having 1 to 6 carbon atoms; ５ ~R ９ at least two of the groups represent an alkyl group having 1 to 6 carbon atoms, X represents a substituted or unsubstituted benzene ring or naphthalene ring, n is 2 or 3, and L represents a monoanionic ligand.

5. In any one of claims 1 to 4, the light-emitting layer includes a first organic compound and a second organic compound; The light-emitting device is a combination of the first organic compound and the second organic compound that forms an exciplex.

6. In any one of claims 1 to 5, a hole injection layer; The light-emitting device wherein the hole injection layer comprises an acceptor material.

7. In any one of claims 1 to 5, a hole injection layer; The light-emitting device, wherein the hole injection layer comprises at least one of an aromatic amine compound, a carbazole compound, a thiophene compound, and a furan compound, and an acceptor material.

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