Reaction chamber with temperature control capabilities and substrate processing system equipped with the same

Abstract

To provide a reaction chamber with temperature control capabilities and a substrate processing system equipped with the same.SOLUTION: A reaction chamber with efficient temperature control capabilities and a substrate processing system comprising the reaction chamber are presented. The reaction chamber may comprise: a chamber wall configured to encircle a reaction space in which a wafer is processed; a wafer support that is disposed at a lower part and center of the chamber wall and is configured to support the wafer; a showerhead disposed at an upper side of the chamber wall; a gas channel (GC) disposed on and around the showerhead; and a temperature control part that is disposed on the GC and is configured to control a temperature of the reaction chamber, where a coolant path is disposed in the GC.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates generally to a reaction chamber for processing substrates in semiconductor manufacturing. More specifically, exemplary embodiments of the present disclosure relate to a reaction chamber structure for efficiently controlling the temperature of the reaction chamber, and a substrate processing system including a reaction chamber according to the present disclosure. [Background technology]

[0002] Currently, some PEALD chamber reactors are configured to be heated to a specific temperature using heater cartridges. However, current reactor designs consisting of showerheads, gas channels (GCs), and other manifolds experience additional heat from sources such as radiation from the susceptor and heat from the input RF power (HF and LF).

[0003] For the reasons stated above, this additional heat must be removed to maintain control over the showerhead temperature. The showerhead cartridge heater must not operate at 0% power. Reactor temperature control should be provided by the showerhead cartridge heater.

[0004] To achieve this goal, the cooling system utilizes process cooling water (PCW) to effectively remove excess heat. It is also important that the cooling system cannot flow through the showerhead, as it is exposed to RF power (RF high-temperature components) and this can lead to RF power loss. Additionally, it is important to prevent the PCW from boiling within the cooling channels.

[0005] Therefore, to achieve the above objectives, the present disclosure presents a reaction chamber according to the present embodiment and a substrate processing system including the reaction chamber for effective temperature control of the reactor.

[0006] This summary is provided to introduce some concepts in a simplified form that are described in more detail below in the detailed description of exemplary embodiments of this disclosure. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. Summary of the Invention [Means for solving the problem]

[0007] According to one embodiment, there may be provided a reaction chamber in a substrate processing system, the reaction chamber including: a chamber wall configured to surround a reaction space in which a wafer is processed; a wafer support disposed at a lower portion and center of the chamber wall and configured to support the wafer; a showerhead disposed above the chamber wall; a gas channel (GC) disposed around and around the showerhead; and a temperature control unit disposed above the GC and configured to control the temperature of the reaction chamber, the temperature control unit having a coolant path disposed within the GC.

[0008] In one embodiment, the temperature control unit includes a thermal contact plate disposed on the GC and configured to adjust the thermal contact plate, and a cooling plate unit disposed on the thermal contact plate and configured to cool the heat transferred from the thermal contact plate.

[0009] In one aspect, the cooling plate portion includes an upper cooling plate, a lower cooling plate, and a water channel disposed between the upper cooling plate and the lower cooling plate.

[0010] In one embodiment, the upper and lower cooling plates are joined by welding.

[0011] In one aspect, the water pathway is disposed along the thermal contact plate.

[0012] In one embodiment, both the bottom of the thermal contact plate and the surface of the GC corresponding to the bottom of the thermal contact plate are machined to have n circular sector shapes, and the bottom of the thermal contact plate and the surface of the GC corresponding to the bottom of the thermal contact plate are alternating concave and convex, and n is an even number greater than or equal to 4.

[0013] In one embodiment, the thermal contact plate is rotatable to orientate the machined surface of a GC for heat removal from the reaction chamber.

[0014] In one aspect, the rotation of the thermal contact plate is between a minimum and a maximum value.

[0015] In one embodiment, the minimum is 20% and the maximum is 100%.

[0016] In one embodiment, the cooling plate portion is made of aluminum (Al).

[0017] In one embodiment, the thermal contact plate is made of aluminum nitride (AlN).

[0018] According to another embodiment, there may be provided a substrate processing system comprising: a plurality of reaction chambers; a process cooling water (PCW) source; and flow paths between the PCW source and the plurality of reaction chambers for cooling the temperature of the plurality of reaction chambers, each of the plurality of reaction chambers comprising: chamber walls configured to enclose a reaction space in which a wafer is processed; a wafer support disposed at a lower part and center of the chamber wall and configured to support the wafer; a showerhead disposed above the chamber wall; gas channels (GC) disposed above and around the showerhead; and a temperature controller disposed on the GC and configured to control the temperature of the reaction chamber, wherein a coolant path is disposed within the GC; and the temperature controller comprises: a thermal contact plate disposed on the GC and configured to adjust the thermal contact plate; and a cooling plate portion disposed on the thermal contact plate and configured to cool heat transferred from the thermal contact plate.

[0019] In one aspect, each of the plurality of reaction chambers further comprises a coolant inlet disposed in each of the reaction chambers for allowing PCW to flow from the PCW source into the coolant path, and a coolant outlet disposed in each of the reaction chambers for allowing PCW to flow from the coolant path to the PCW source.

[0020] In one embodiment, the flow path is connected in series from a PCW source to the reaction chamber and to the PCW source.

[0021] In one embodiment, the flow paths are connected in parallel between the PCW source and the reaction chamber.

[0022] In one embodiment, the flow paths are connected in parallel when the PCW in the reaction chamber coolant path boils.

[0023] In one embodiment, the thermal contact plate comprises a plurality of contact plates configured to adjust the thermal contact plate area with the GC, each of the plurality of contact plates having an "n-division circle" shape, where n is an integer greater than or equal to 4.

[0024] In one embodiment, each of the plurality of contact plates is rotated and oriented such that the GC and each of the plurality of contact plates are in contact for heat removal from the reaction chamber.

[0025] In one aspect, each of the rotations of the plurality of contact plates is between a minimum and a maximum value.

[0026] In one embodiment, the minimum is 20% and the maximum is 100%.

[0027] It will be understood that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help to improve understanding of the illustrated embodiments of the present disclosure. [Brief explanation of the drawings]

[0028] [Figure 1] FIG. 1 is a schematic diagram illustrating a reaction chamber according to one embodiment of the present disclosure. [Figure 2A] FIG. 1 is a top view of a reaction chamber according to one embodiment of the present disclosure. [Figure 2B] FIG. 1 is a diagram of a GC surface corresponding to a thermal contact plate according to one embodiment of the present disclosure. [Figure 2C] FIG. 2 is a perspective view of a cooling plate portion according to one embodiment of the present disclosure. [Figure 2D] FIG. 1 illustrates a GC and coolant paths in the GC, according to one embodiment of the present disclosure. [Figure 3] FIG. 10 illustrates a bottom view of a thermal contact plate according to one embodiment of the present disclosure. [Figure 4]FIG. 1 illustrates a coolant inlet tube for providing PCW into a reaction chamber and a coolant outlet tube for discharging PCW from the reaction chamber to control the temperature of the reaction chamber, according to one embodiment of the present disclosure. [Figure 5] FIG. 1 is a top view of a substrate processing system with four reaction chambers according to another embodiment of the present disclosure. [Figure 6] FIG. 10 illustrates a series connection of PCW paths in a substrate processing system according to another embodiment of the present disclosure. [Figure 7] 7 is a diagram illustrating a parallel connection of PCW paths in a substrate processing system according to another embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0029] While certain specific embodiments and examples are disclosed below, it will be understood by those skilled in the art that the scope of the invention extends beyond the specifically disclosed embodiments and / or uses of the invention, and obvious variations and equivalents thereof. It is therefore not intended that the scope of the disclosed invention should be limited by the specific disclosed embodiments described below.

[0030] As used in this disclosure, the term "substrate" may refer to any single or multiple underlying materials, such as any single or multiple underlying materials that may be modified or upon which a device, circuit, or film may be formed. A "substrate" may be continuous or discontinuous, rigid or flexible, solid or porous, and combinations thereof. The substrate may be in any form, such as a powder, a plate, or a workpiece. Substrates in plate form may include wafers of various shapes and sizes. The substrate may be made of semiconductor materials, such as, for example, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide.

[0031] For example, the substrate in powder form may have applications in pharmaceutical manufacturing. The porous substrate may comprise a polymer. Examples of workpieces may include medical devices (e.g., stents and syringes), jewelry, tooling devices, components for battery manufacturing (e.g., anodes, cathodes, or separators), or components of photovoltaic cells, etc.

[0032] The continuous substrate may extend beyond the boundaries of the process chamber in which the deposition process occurs. In some processes, the continuous substrate may move through the process chamber, allowing the process to continue until the end of the substrate is reached. The continuous substrate may be supplied from a continuous substrate supply system to enable the manufacture and production of the continuous substrate in any suitable form.

[0033] Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, webs, flexible materials, bundles of continuous filaments or fibers (e.g., ceramic fibers or polymer fibers). Continuous substrates may also include carriers or sheets onto which discontinuous substrates are placed.

[0034] The examples presented in this disclosure are not meant to be actual representations of any particular materials, structures, or devices, but are merely idealized representations used to describe embodiments of the present disclosure.

[0035] The specific implementations shown and described are illustrative of the invention and its best mode and are in no way intended to otherwise limit the scope of aspects and implementations. Also, for the sake of brevity, conventional manufacturing, association, preparation, and other functional aspects of the systems may not be described in detail. Furthermore, connecting lines shown in the various figures are intended to represent example functional relationships and / or physical couplings between the various elements. Many alternative or additional functional relationships or physical connections may be present in an actual system and / or may not be present in some embodiments.

[0036] It will be understood that the configurations and / or approaches described in this disclosure are exemplary in nature, and that these specific embodiments or examples are not to be construed in a limiting sense, as numerous variations are possible. The specific routines or methods described in this disclosure may represent one or more of any number of process strategies. As such, the various illustrated operations may be performed in the order illustrated, in other orders, or may be omitted in some cases.

[0037] The subject matter of this disclosure includes all novel and non-obvious combinations and subcombinations of the various processes, systems, and configurations, as well as other configurations, functions, operations and / or properties disclosed in this disclosure, as well as any and all equivalents thereof.

[0038] FIG. 1 is a schematic diagram illustrating a reaction chamber according to one embodiment of the present disclosure.

[0039] The reaction chamber 100 of the present disclosure may be configured with chamber walls 150 and a wafer support 160 that supports a wafer 161 for processing. The reaction chamber 100 may also be configured with a gas channel (GC) 130 and a showerhead 140.

[0040] Chamber walls 150 may surround a reaction space 170 in which wafers are processed, and a wafer support 160 may be located below and in the center of the chamber walls 150. A showerhead 140 may be located above the reaction space, and a GC may be located around and on the showerhead 140. A coolant passage 131 may be located inside the GC 130.

[0041] A temperature control unit (110, 111, 120) may be disposed above the GC 130.

[0042] The temperature control section (110, 111, 120) may be configured to include a cooling plate section 110 and a thermal contact plate 111, and the water path 112 may be disposed between the cooling plate section 110 and the thermal contact plate 111. The cooling plate section 110 may be illustrated in FIG. 2C, which shows a perspective view of the cooling plate section 110 according to an embodiment of the present disclosure.

[0043] The cooling plate assembly 110 may comprise an upper cooling plate 210C and a lower cooling plate 211C, which may be welded together. In another embodiment, there may be only one cooling plate instead of two plates (210C, 211C).

[0044] In either case, there may be a water passage 212 (in the case of two plates) or a tubing passage (in the case of one plate) within the space between the upper cooling plate 210C and the lower cooling plate 211C, which may be used to cool the temperature of the reaction chamber 100 through which a coolant flows.

[0045] FIG. 2A is a top view of a reaction chamber according to one embodiment of the present disclosure.

[0046] The temperature control section (210A, 211A, 220A) may comprise a cooling plate section (210A, 211A) and a thermal contact plate (220A). Both the cooling plate section (210A, 211A) and the thermal contact plate (220A) may be circular in shape, except for a central circular area 210 or a somewhat larger central circular area. The GC 230A may be in contact with the temperature control section, which will be described later.

[0047] 2B shows the GC surface corresponding to the bottom of the thermal contact plate according to an embodiment of the present disclosure. FIG. 3 shows the bottom of the thermal contact plate according to one embodiment of the present disclosure. As shown, the surface of the GC 230B and the bottom of the thermal contact plate 320 correspond to each other.

[0048] The surface of GC 230B and the bottom of thermal contact plate 320 may be machined to have "n" circular sector shapes (excluding the central circular area), where the n circular sector shapes in the bottom 320 of the thermal contact plate are alternating recesses 321 and protrusions 322. Also, the n circular sector shapes on the surface of GC 230B corresponding to the bottom 320 of the thermal contact plate are alternating recesses 221B and protrusions 220B.

[0049] The concave and convex portions in the n circular sector shapes may alternate, and therefore n may be an even number, and n may need to be 4 or greater to control contact between GC230B and thermal contact plate 320.

[0050] When the GC 230B and the bottom of the thermal contact plate 320 are oriented, the contact area between the GC 230B and the thermal contact plate 320 changes, which can change the rate of heat removal from the reaction chamber 100. The greater the contact, the greater the rate of heat removal. For better orientation, maximum, middle, and minimum values ​​may be defined to indicate how much contact can be achieved. Typically, the minimum to maximum is 20% to 100%.

[0051] FIG. 2D illustrates a GC 230D and a GC coolant path 231D according to an embodiment of the present disclosure.

[0052] As shown, the coolant path 231D may be configured to cover most of the GC region, and the coolant in the coolant path 231D may not enter the showerhead 140. This prevents RF power loss from the coolant in the showerhead 140. The coolant path in FIG. 2D (231D) may be similar to the coolant path in FIG. 1 (131). The coolant path 231D may begin and end with coolant inlets 271 / 272 and coolant outlets 272 / 271 for coolant flowing into and out of the coolant path 231D for heat removal from the reaction chamber 100.

[0053] 4 shows coolant inlet tubes 471 / 472 for supplying process cooling water (PCW) into the reaction chamber and coolant outlet tubes 472 / 471 for exhausting PCW from the reaction chamber to control the temperature of the reaction chamber. The coolant provided to the reaction chamber 100 may flow into the water path 212 of the cooling plate sections (110, 111) and the coolant path 231D of the GC 230D. The upper and lower cooling plates 410 and 411 may be used to cool the heat coming from the coolant in the water path 212 and the coolant path 231D, and the thermal contact plate 420 may be positioned in line with the surface of the GC 430 to control the heat removal rate.

[0054] 5 shows a top view of a substrate processing system having four reaction chambers according to another embodiment of the present disclosure. Typically, a substrate processing system may have two or more reaction chambers, and in the present disclosure, for example, a four reaction chamber system is used.

[0055] The substrate processing system 500 may be configured with four reaction chambers (RCs): RC1 510, RC2 520, RC3 530, and RC4 540. There may be many ways to cool the temperature of the RCs in FIG.

[0056] FIG. 6 illustrates a series connection of PCW paths in a substrate processing system according to another embodiment of the present disclosure.

[0057] In this diagram, a PCW from PCW source 605 may first enter RC1 610 via SL1, then enter RC2, RC3, and RC4 via SL2, SL3, and SL4, respectively. Finally, the same PCW returns to PCW source 605.

[0058] Although all RCs may be equipped with temperature control units (110, 111, 120) and thus configured to cool the temperature of the RCs, the temperature of the PCW may rise as it passes through a new RC. This usually means that the temperature (PCW in RC4) > the temperature (PCW in RC3) > the temperature (PCW in RC2) > the temperature (PCW in RC1). Also, during this PCW circulation, it is possible that the temperature of the PCW may rise to its boiling point.

[0059] If the PCW boils at the connections SL1-SL5 or within each coolant path of the RC, it may no longer function as a coolant.

[0060] FIG. 7 illustrates a parallel connection of PCW paths in a substrate processing system according to another embodiment of the present disclosure.

[0061] The series connection of the PCW circulation in Figure 6 may cause boiling of the PCW. Therefore, a parallel connection of the PCW circulation may be used.

[0062] In this figure, PCWs from PCW source 705 are distributed equally to RC1 710, RC2 720, RC3 730, and RC4 740 via PL1, and the outputs from RC1-RC4 may be collected and returned to PCW source 705 simultaneously and in parallel via PL2.

[0063] This may prevent the PCW from boiling in the connections PL1 and PL2 or the coolant path of the RC, as it will not accumulate heat in the PCW from the previous RC.

[0064] The above-described arrangements of the devices are merely illustrative of the application of the principles of the present invention, and numerous other embodiments and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims. The scope of the invention should, therefore, be determined not with reference to the above description, but should instead be determined with reference to the appended claims along with their full scope of equivalents.

Claims

1. 1. A reaction chamber in a substrate processing system, comprising: a chamber wall configured to enclose a reaction space in which the wafer is processed; a wafer support disposed below and centrally of the chamber wall, the wafer support configured to support the wafer; a showerhead disposed above the chamber wall; a gas channel (GC) disposed around the showerhead; a temperature control section disposed on the gas channel (GC) and configured to control the temperature of the reaction chamber, wherein a coolant path is disposed within the gas channel (GC).

2. The temperature control unit a thermal contact plate disposed on the gas channel (GC) and configured to adjust contact with the gas channel (GC) for thermal control; 2. The reaction chamber of claim 1, further comprising: a cooling plate portion disposed on the thermal contact plate and configured to cool heat transferred from the thermal contact plate.

3. The cooling plate portion is an upper cooling plate; a lower cooling plate; 3. The reaction chamber of claim 2, further comprising: a water passage disposed between the upper and lower cooling plates.

4. The reaction chamber of claim 3 , wherein the upper cooling plate and the lower cooling plate are joined by welding.

5. The reaction chamber of claim 3 , wherein the water path is disposed along the thermal contact plate.

6. 3. The reaction chamber of claim 2, wherein both the bottom of the thermal contact plate and the surface of the gas channel (GC) corresponding to the bottom of the thermal contact plate are machined to have n circular sector shapes, and the bottom of the thermal contact plate and the surface of the gas channel (GC) corresponding to the bottom of the thermal contact plate are alternating concave and convex, and n is an even number greater than or equal to 4.

7. 7. The reaction chamber of claim 6, wherein the thermal contact plate is rotatable to orientate the machined surface of a gas channel (GC) for heat removal from the reaction chamber.

8. 8. The reaction chamber of claim 7, wherein the rotation of the thermal contact plate is between a minimum value and a maximum value.

9. 9. The reaction chamber of claim 8, wherein the minimum value is 20% and the maximum value is 100%.

10. The reaction chamber of claim 2 , wherein the cooling plate portion is made of aluminum (Al).

11. The reaction chamber of claim 2 , wherein the thermal contact plate is made of aluminum nitride (AlN).

12. 1. A substrate processing system comprising: a plurality of reaction chambers; a process cooling water (PCW) source; a flow path between the process cooling water (PCW) source and the plurality of reaction chambers for cooling the temperature of the plurality of reaction chambers, wherein each of the plurality of reaction chambers comprises: a chamber wall configured to enclose a reaction space in which the wafer is processed; a wafer support disposed below and centrally of the chamber wall, the wafer support configured to support the wafer; a showerhead disposed above the chamber wall; a gas channel (GC) disposed on and around the showerhead; a temperature control section disposed on the gas channel (GC) and configured to control a temperature of the reaction chamber, wherein a coolant path is disposed within the gas channel (GC); The temperature control unit a thermal contact plate disposed on the gas channel (GC) and configured to adjust contact with the gas channel (GC) for thermal control; a cooling plate portion disposed on the thermal contact plate and configured to cool heat transferred from the thermal contact plate.

13. Each of the plurality of reaction chambers further comprises: a coolant inlet disposed in each of the reaction chambers for admitting process cooling water (PCW) from the process cooling water (PCW) source into the coolant pathway; 13. The substrate processing system of claim 12, further comprising: a coolant outlet disposed in each of the reaction chambers for flowing process cooling water (PCW) from the coolant path to the PCW source.

14. 13. The substrate processing system of claim 12, wherein the flow path is connected in series from the process cooling water (PCW) source to the reaction chamber and the PCW source.

15. 13. The substrate processing system of claim 12, wherein the flow paths are connected in parallel between the process cooling water (PCW) source and the reaction chamber.

16. 16. The substrate processing system of claim 15, wherein the flow paths are connected in parallel when process cooling water (PCW) in the reaction chamber coolant path boils.

17. 13. The substrate processing system of claim 12, wherein both the bottom of the thermal contact plate and the surface of the gas channel (GC) corresponding to the bottom of the thermal contact plate are machined to have n circular sector shapes, and the bottom of the thermal contact plate and the surface of the gas channel (GC) corresponding to the bottom of the thermal contact plate are alternating concave and convex, and n is an even number greater than or equal to 4.

18. 18. The substrate processing system of claim 17, wherein the thermal contact plate is rotatable to orient the machined surface of a gas channel (GC) for heat removal from the reaction chamber.

19. 20. The substrate processing system of claim 18, wherein the rotation of the thermal contact plate is between a minimum and a maximum value.

20. 20. The substrate processing system of claim 19, wherein the minimum value is 20% and the maximum value is 100%.

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