Through electrode substrate

Abstract

To provide a through electrode substrate which can prevent falling of a filler in a through hole.SOLUTION: A through electrode substrate includes a substrate having a through hole penetrating through a first opening of a first surface and a second opening of a second surface, a conductive layer provided inside the through hole, and an insulating resin layer which overlaps the through hole in plan view, and comes in contact with the conductive layer exposed to at least one of the first surface and the second surface, where a smallest opening having the smallest area in plan view exists between the first opening and the second opening, and the insulating resin layer has a function of permeating gas therethrough.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a through electrode substrate having through electrodes that penetrate the front and back surfaces of a substrate, and more particularly to a through electrode substrate used as an interposer substrate for connecting multiple elements, and also to a semiconductor device using the through electrode substrate. [Background technology]

[0002] In recent years, there has been progress in the development of through-hole electrode substrates, which have conductive parts that connect the front and back surfaces of a substrate as interposers between LSI chips. In such through-hole electrode substrates, the through electrodes are formed by filling the inside of the through holes with a conductive material using electroplating or other methods.

[0003] An LSI chip with narrow-pitch, short-dimension wiring is placed on the upper surface of the through-electrode substrate. Also, a semiconductor mounting substrate with wide-pitch, long-dimension wiring is placed on the lower surface of the through-electrode substrate. The following documents are examples of prior art for through-electrode substrates: [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent Application No. 2005-514387 [Patent Document 2] Patent Application No. 2010-548586 [Patent Document 3] Patent Application No. 2003-513037 [Patent Document 4] Patent Application No. 2011-528851 [Patent Document 5] International Publication No. 2010 / 087483 [Patent Document 6] International Publication No. 2005 / 034594 [Patent Document 7] International Publication No. 2003 / 007370 [Patent Document 8] International Publication No. 2011 / 024921 [Patent Document 9] Patent No. 4241202 [Patent Document 10] Patent No. 4203277 [Patent Document 11] Patent No. 4319831 [Patent Document 12] Patent No. 4022180 [Patent Document 13] Patent No. 4564342 [Patent Document 14] Patent No. 4835141 [Patent Document 15] Patent No. 5119623 [Patent Document 16] Japanese Patent Application Laid-Open No. 2009-23341 [Patent Document 17] Patent No. 2976955 [Patent Document 18] Japanese Patent Application Laid-Open No. 2003-243396 [Patent Document 19] Japanese Patent Application Laid-Open No. 2003-198069 [Patent Document 20] Patent No. 4012375 Summary of the Invention [Problem to be solved by the invention]

[0005] In a through electrode, a conductive material may be filled into the through hole as described above, or a conductive film may be formed along the side wall of the through hole and an insulating resin may be filled into the remaining part of the through hole as a filler. In a through electrode, techniques are known in which the inside of the through hole is tapered or a large number of crater-like irregularities are formed inside the through hole to prevent the filler from falling out (Patent Document 3, Patent Document 4).

[0006] However, even if such a technique is used to prevent the filler from falling off, a gap may be formed between the filler and the side wall of the through-hole, and gas may accumulate there. In conventional technology, if pressure is applied, the gas accumulated in the gas reservoir will expand, causing holes or damage to the filler, which may result in the filler falling off.

[0007] Therefore, the present invention has been made in consideration of such problems, and provides a through electrode substrate and a semiconductor device that eliminates problems caused by gas accumulating in gas pockets within the through holes and prevents the filling material within the through holes from falling out. [Means for solving the problem]

[0008] According to one embodiment of the present invention, a substrate having a through hole passing through a first opening on a first surface and a second opening on a second surface; a filler disposed in the through hole, the second opening is larger than the first opening, and a minimum opening having a smallest area in a plan view is present between the first opening and the second opening; There is provided a through electrode substrate, characterized by having a gas release portion disposed so as to come into contact with the filler exposed on either the first surface or the second surface.

[0009] Moreover, according to one embodiment of the present invention, a substrate having a through hole that penetrates a first opening on a first surface and a second opening on a second surface, the through hole having a first portion between the first opening and the second opening and a second portion that has a larger area in a plan view than the first portion and the first opening; a filler disposed in the through hole, There is provided a through electrode substrate, characterized by having a gas release portion disposed so as to come into contact with the filler exposed on either the first surface or the second surface.

[0010] Furthermore, at least a portion of the side wall of the through hole may include a curve having an inflection point in a cross-sectional view.

[0011] The gas release portion may be made of insulating resin that releases gas inside the through-hole to the outside.

[0012] At least a portion of the gas release portion may also be disposed between a side wall of the through-hole and the filler.

[0013] The gas release section may have an opening, and the area of ​​the opening of the gas release section may increase in a plan view as it is spaced further away from the substrate.

[0014] A conductive film may be disposed between the sidewall of the through hole and the filling material.

[0015] An insulating film and a conductive film may be disposed in this order from the sidewall of the through hole between the sidewall of the through hole and the filling material.

[0016] The conductive film may also be disposed on the first surface and the second surface.

[0017] The filler may be a conductive material.

[0018] The filler may be an insulating material.

[0019] The substrate may be an insulating substrate.

[0020] The substrate may be a conductive substrate.

[0021] The gas release section has an opening, The opening of the gas release portion may overlap with the first opening and the second opening.

[0022] The gas release section has an opening, The opening of the gas release portion may not overlap with the first opening and the second opening.

[0023] the gas release portion is disposed on the first surface and the second surface, The area where the gas release portion on the second surface side comes into contact with the filler may be larger than the area where the gas release portion on the first surface side comes into contact with the filler.

[0024] Moreover, according to one embodiment of the present invention, there is provided a semiconductor device having an LSI substrate, a semiconductor chip, and the through electrode substrate of the present invention. [Effects of the Invention]

[0025] According to the present invention, it is possible to eliminate problems caused by gas accumulating in gas pockets within the through holes, prevent the filling material within the through holes from falling out, and provide a highly reliable through electrode substrate and semiconductor device. [Brief explanation of the drawings]

[0026] [Figure 1] 1 is a diagram showing a configuration of a through hole electrode substrate 100 according to a first embodiment of the present invention. [Figure 2] 10 is a diagram showing the configuration of a through hole electrode substrate 200 according to a second embodiment of the present invention. FIG. [Figure 3] 10 is a diagram showing the configuration of a through hole electrode substrate 300 according to a third embodiment of the present invention. FIG. [Figure 4] 10 is a diagram showing the configuration of a through hole electrode substrate 400 according to a fourth embodiment of the present invention. FIG. [Figure 5] 10 is a diagram showing the configuration of a through hole electrode substrate 100 according to a fifth embodiment of the present invention. FIG. [Figure 6] 10 is a diagram showing the configuration of a through hole electrode substrate 100 according to a sixth embodiment of the present invention. FIG. [Figure 7] 10 is a diagram showing the configuration of a through hole electrode substrate 100 according to a seventh embodiment of the present invention. FIG. [Figure 8] 10 shows an example in which the alignment of the opening (via) 110 on the filler 105 in the through hole electrode substrate 100 of the present invention according to the seventh embodiment is misaligned. [Figure 9] 10 is a diagram showing the configuration of a through hole electrode substrate 200 according to a seventh embodiment of the present invention. FIG. [Figure 10]10 is a diagram showing the configuration of a through hole electrode substrate 300 according to a seventh embodiment of the present invention. FIG. [Figure 11] 10 is a diagram showing the configuration of a through hole electrode substrate 400 according to a seventh embodiment of the present invention. FIG. [Figure 12] 10 is a diagram showing a configuration of a semiconductor device 1000 according to an eighth embodiment of the present invention. FIG. [Figure 13] 10 is a diagram showing a configuration of a semiconductor device 1000 according to an eighth embodiment of the present invention. FIG. [Figure 14] 10 is a diagram showing a configuration of a semiconductor device 1000 according to an eighth embodiment of the present invention. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0027] The through hole electrode substrate of the present invention will be described in detail below with reference to the drawings. Note that the through hole electrode substrate of the present invention is not limited to the following embodiments, and various modifications can be made. In all embodiments, the same components are described with the same reference numerals.

[0028] (First embodiment) The configuration of a through hole electrode substrate 100 of the present invention according to a first embodiment will be described with reference to Fig. 1. Fig. 1(A) is a plan view of the through hole electrode substrate 100 of the present invention according to this embodiment, viewed from above. Fig. 1(B) is a cross-sectional view taken along line A-A' in Fig. 1(A). For ease of explanation, both Figs. 1(A) and (B) show a portion of the through hole electrode substrate 100 of the present invention according to this embodiment.

[0029] The through hole electrode substrate 100 of the present invention according to this embodiment includes a substrate 102, a through hole 104, a filler 105, insulating layers 106 and 108, and vias 110 and 112. A wiring structure, electronic components, etc. are further mounted on each of the first surface 102a and second surface 102b of the substrate 102. It may be done.

[0030] In this embodiment, the substrate 102 has insulating properties and can be made of, for example, glass, sapphire, resin, etc. There is no particular limit to the thickness of the substrate 102, but it can be set appropriately within the range of, for example, 10 μm to 1 mm.

[0031] The through-hole 104 is a through-hole that penetrates through a first opening 104a disposed on a first surface 102a of the substrate 102 and a second opening 104b disposed on a second surface 102b, which is the surface opposite the first surface 102a. The shape of the through-hole 104 is not constant but changes from the first opening 104a to the second opening 104b. In other words, the shape of the sidewall of the through-hole 104 is not constant but changes from the first opening 104a to the second opening 104b. Typically, the second opening 104b is larger than the first opening 104a, and the through-hole 104 has a constriction (constricted portion) between the first opening 104a and the second opening 104b. More specifically, through hole 104 has a minimum opening 104c having a minimum area M in a plan view (i.e., when viewed from the top), an inflection point 104d (a curve having inflection point 104d) where the sidewall of through hole 104 changes along a curve in a cross-sectional view (i.e., when viewed from the A-A' cross section), and a maximum opening 104e having a maximum area L in a plan view (i.e., when viewed from the top). In this embodiment, inflection point 104d of through hole 104 is located closer to second opening 104b than the center of through hole 104, but this is not limited thereto, and inflection point 104d of through hole 104 may be located closer to first opening 104a than the center of through hole 104. Note that through hole 104 can be formed by subjecting substrate 102 to etching, laser processing, sandblasting, or the like. There is no particular limitation on the size of the through holes 104, but it is preferable that the size of the maximum opening 104e is 200 μm or less in order to achieve a narrow pitch.

[0032] A filler 105 is disposed inside the through hole 104. In this embodiment, the filler 105 is a conductive material, and for example, a conductive material such as a deposit of a metal such as Cu, a conductive paste containing Cu, or a conductive resin is used. When a metal such as Cu is used as the filler 105, an electrolytic plating filling method is used. When a fluid conductive paste or conductive resin is used as the filler 105, the through hole 104 is filled with the conductive paste or conductive resin using a spatula, scraper, or the like, and then heat treatment or the like is performed to form the filler 105.

[0033] The insulating layers 106 and 108 are disposed on the first surface 102a and the second surface 102b of the substrate 102, respectively, either directly or via an intermediate layer (not shown). The insulating layers 106 and 108 are formed of an insulating resin material such as polyimide or benzocyclobutene, and may be any insulating material having a gas release function. The insulating layers 106 and 108 act as gas release sections that release gas generated and released within the through-holes 104 to the outside (allowing the gas to pass through). At least one of the insulating layers (gas release sections) 106 and 108 is disposed so as to contact the filler 105 exposed on the first surface 102a and the second surface 102b of the substrate 102. Furthermore, when a gap exists between the side wall of the through hole 104 and the filler 105, a part of the insulating layers (gas releasing portions) 106 and 108 may be disposed between the side wall of the through hole 104 and the filler 105, that is, the insulating layers 106 and 108 may be arranged between the side wall of the through hole 104 and the filler 105. The insulating layers 106 and 108 are formed, for example, by using a photosensitive insulating material and performing a desired patterning by photolithography.

[0034] In the through hole electrode substrate 100 of the present invention according to this embodiment, as described above, the through hole 104 has a minimum opening 104c, an inflection point 104d, and a maximum opening 104e. The through hole 104 is filled with a filler 105. In the case shown in FIG. 1, the portion of the through hole 104 on the second surface 102b side has a larger amount of filler than the portion of the through hole 104 on the first surface 102a side. The amount of gas released increases accordingly. The area of ​​gas release section 106 on the second surface 102b side that comes into contact with filler 105 may be made larger than the area of ​​gas release section 108 on the first surface 102a side that comes into contact with filler 105, thereby increasing the amount of gas released from gas release section 108 on the second surface side. Furthermore, since second opening 104b is larger than first opening 104a, the above-mentioned relationship in contact area can be easily obtained by making via 110 and via 112 have approximately the same diameter.

[0035] The vias 110 and 112, which are openings, are holes formed in the insulating layers (gas release portions) 106 and 108, respectively. Although not shown for convenience of explanation, wiring is formed in the vias 110 and 112 by plating or sputtering. These wirings contact the filler 105 arranged in the through hole 104, and these wirings are electrically connected to each other. As shown in FIG. 1(b), the vias 110 and 112, which are openings in the insulating layers (gas release portions) 106 and 108, are formed so as to overlap the first opening and the second opening of the substrate 102, respectively. In other words, the vias 110 and 112, which are openings in the insulating layers (gas release portions) 106 and 108, are positioned directly above the first opening and the second opening of the substrate 102, respectively. Furthermore, the vias 110 and / or 112, which are openings in the insulating layers (gas releasing portions) 106 and 108, may be formed so as to overlap the first opening 104a and the second opening 104b of the substrate 102, respectively.

[0036] In the through hole electrode substrate 100 according to this embodiment, as described above, the through hole 104 has a minimum opening 104c, an inflection point 104d, and a maximum opening 104e. The through hole 104 is filled with a filler 105. The difference in size between the first opening 104a and the second opening 104b ensures the filler's ability to be filled. When a force acts on the filler 105 toward the first surface 102a, the presence of the inflection point 104d prevents the filler 105 from falling off the substrate 100. When a force acts on the filler 105 toward the second surface 102b, the presence of the minimum opening 104c prevents the filler 105 from falling off the substrate 100. The through hole electrode substrate 100 according to this embodiment may have both or only one of the minimum opening 104c and the maximum opening 104d. Therefore, in through hole electrode substrate 100 of the present invention according to this embodiment, the filling property of filler 105 can be ensured, and filler 105 can be prevented from falling off in either the up or down direction.

[0037] Furthermore, in through hole electrode substrate 100 according to this embodiment of the present invention, as described above, at least one of insulating layers (gas release portion) 106 and 108 is arranged so as to contact filler 105 exposed on first surface 102a and second surface 102b of substrate 102. Therefore, insulating layers (gas release portion) 106 and / or 108 can release gas generated and released within through hole 104 to the outside, eliminating problems caused by gas accumulating in gas pockets within through hole 104 and preventing filler 105 from falling out of through hole 104, making it possible to provide a highly reliable through hole electrode substrate.

[0038] It is preferable that there is no space between the side wall of through hole 104 and filler 105, but there may be cases where a small space or gap occurs between the side wall of through hole 104 and filler 105. Even when such a space or gap occurs, in through hole electrode substrate 100 of the present invention according to this embodiment, it is possible to prevent filling portion 105 from falling off.

[0039] (Second embodiment) The configuration of a through hole electrode substrate 200 of the present invention according to a second embodiment will be described with reference to FIG. 2. FIG. 2(A) is a plan view of the through hole electrode substrate 200 of the present invention according to this embodiment as seen from above. FIG. 2(B) is a cross-sectional view taken along line A-A' in FIG. 2(A). For ease of explanation, both FIGS. 2(A) and (B) show only a portion of the through hole electrode substrate 200 of the present invention according to this embodiment. are.

[0040] Through hole electrode substrate 200 of the present invention according to this embodiment includes substrate 202, through hole 204, filler 205, insulating layers 206 and 208, conductive film 207, and vias 210 and 212. Note that a wiring structure, electronic components, etc. may be further mounted on each of first surface 202a and second surface 202b of substrate 202.

[0041] In this embodiment, the substrate 202 has insulating properties and can be made of, for example, glass, sapphire, resin, etc. There is no particular limitation on the thickness of the substrate 202, but it can be set appropriately within the range of, for example, 10 μm to 1 mm.

[0042] The through hole 204 is a through hole that penetrates through a first opening 204a arranged on a first surface of the substrate 202 and a second opening 204b arranged on a second surface 202b, which is the surface opposite the first surface 202a. As in the first embodiment described above, the through hole 204 has a shape that is not constant but changes from the first opening 204a to the second opening 204b. In other words, the shape of the side wall of the through hole 204 is not constant but changes from the first opening 204a to the second opening 204b. Typically, the second opening 204b is larger than the first opening 204a, and the through hole 204 has a constriction (constricted portion) between the first opening 204a and the second opening 204b. More specifically, through hole 204 has minimum opening 204c having minimum area M in plan view (i.e., when viewed from the top), inflection point 204d (a curve having inflection point 204d) where the sidewall of through hole 204 changes along a curve in cross-sectional view (i.e., when viewed from the A-A' cross section), and maximum opening 204e having maximum area L in plan view (i.e., when viewed from the top). In this embodiment, inflection point 204d of through hole 204 is located closer to second opening 204b than the center of through hole 204, but this is not limited thereto, and inflection point 204d of through hole 204 may be located closer to first opening 204a than the center of through hole 204. Note that through hole 104 can be formed by subjecting substrate 102 to etching, laser processing, sandblasting, or the like. There is no particular limitation on the size of the through holes 104, but it is preferable that the size of the maximum opening 104e is 200 μm or less in order to achieve a narrow pitch.

[0043] A conductive film 207 and a filler 205 are disposed inside the through-hole 204. The conductive film 207 is disposed on the sidewall of the through-hole 204, and a portion of the conductive film 207 is disposed on the upper portion of the first surface 202a and the second surface 202b of the substrate 202. In this embodiment, the filler 205 is an insulating material, and for example, an organic material such as polyimide or benzocyclobutene, or an inorganic material such as silicon oxide or silicon nitride is used. The conductive film 207 can be formed by a method such as plating or CVD. The filler 205 can be formed by a method such as suction or pushing.

[0044] The insulating layers 206 and 208 are disposed on the first surface 202a and the second surface 202b of the substrate 202, respectively, either directly or via an intermediate layer (not shown). The insulating layers 206 and 208 are formed of an insulating resin material such as polyimide or benzocyclobutene, and may be any insulating material having a gas release function. The insulating layers 206 and 208 function as gas release sections that release gas generated and released within the through-holes 204 to the outside (permeate the gas). In this embodiment, the insulating layers (gas release sections) 206 and 208 are disposed so as to cover and contact the filler 205 exposed on the first surface 202a and the second surface 202b of the substrate 202. At least one of the insulating layers (gas release sections) 206 and 208 may be disposed so as to contact the filler 205 exposed on the first surface 202a and the second surface 202b of the substrate 202. Furthermore, when a gap exists between the side wall of the through hole 204 and the filler 205, a part of the insulating layers (gas releasing portion) 206 and 208 is disposed between the side wall of the through hole 204 and the filler 205, that is, the insulating layers 206 and 208 are disposed between the side wall of the through hole 204 and the filler 205. The insulating layers 206 and 208 are formed by, for example, using a photosensitive insulating material and performing a desired patterning by photolithography.

[0045] In the through hole electrode substrate 200 according to this embodiment of the present invention, as described above, the through hole 204 has a minimum opening 204c, an inflection point 204d, and a maximum opening 204e. The through hole 204 is filled with a filler 205. As shown in FIG. 2 , the amount of filler 205 present in the portion of the through hole 204 on the second surface 202b side is greater than that in the portion of the through hole 204 on the first surface 202a side, resulting in a greater amount of released gas. Therefore, the area where the gas release portion 206 on the second surface 202b side contacts the filler 205 may be made larger than the area where the gas release portion 208 on the first surface side contacts the filler 205, thereby increasing the amount of gas released from the gas release portion 208 on the second surface side.

[0046] The vias 210 and 212, which are openings, are holes formed in the insulating layers (gas releasing portions) 206 and 208 on the conductive film 207 on the first surface 202a and the second surface 202b, respectively. Although not shown for ease of explanation, wiring is formed in the vias 210 and 212 by plating or sputtering. These wirings contact the conductive film 207 on the first surface 202a and the second surface 202b, and are electrically connected to each other. Furthermore, portions of the vias 210 and / or 212, which are openings in the insulating layers (gas releasing portions) 206 and 208, may be formed to overlap the first opening 204a and the second opening 204b of the substrate 202, respectively.

[0047] In the through hole electrode substrate 200 according to this embodiment, as described above, the through hole 204 has a minimum opening 204c, an inflection point 204d, and a maximum opening 204e. The through hole 204 is filled with a filler 205. The difference in size between the first opening 204a and the second opening 204b ensures the filler's ability to be filled. When a force acts on the filler 205 toward the first surface 202a, the presence of the inflection point 204d prevents the filler 205 from falling off the substrate 200. When a force acts on the filler 205 toward the second surface 202b, the presence of the minimum opening 204c prevents the filler 205 from falling off the substrate 200. The through hole electrode substrate 200 according to this embodiment may have both or only one of the minimum opening 204c and the maximum opening 204d. Therefore, in the through hole electrode substrate 200 of the present invention according to this embodiment, the filling property of the filler 205 can be ensured, and the filler 205 can be prevented from falling off in either the up or down direction.

[0048] Furthermore, in through hole electrode substrate 200 of the present invention according to this embodiment, as described above, at least one of insulating layers (gas release portion) 206 and 208 is arranged so as to contact filler 205 exposed on first surface 202a and second surface 202b of substrate 202. Therefore, insulating layers (gas release portion) 206 and / or 208 can release gas generated and released within through hole 204 to the outside, eliminating problems caused by gas accumulating in gas pockets within through hole 204 and preventing filler 205 from falling out of through hole 204, making it possible to provide a highly reliable through hole electrode substrate.

[0049] It is preferable that there is no space between conductive film 207 arranged on the side wall side of through hole 204 and filler 205, but there are cases where a small space or gap occurs between conductive film 207 and filler 205. Even when such a space or gap occurs, in through hole electrode substrate 200 of the present invention according to this embodiment, it is possible to prevent filling portion 205 from falling off.

[0050] (Third embodiment) The configuration of a through hole electrode substrate 300 according to a third embodiment of the present invention will be described with reference to Fig. 3. Fig. 3(A) is a plan view of the through hole electrode substrate 300 according to this embodiment as seen from above. Fig. 3(B) is a cross-sectional view taken along line A-A' in Fig. 3(A). For ease of explanation, both Figs. 3(A) and (B) show a portion of the through hole electrode substrate 300 of the present invention according to this embodiment.

[0051] Through hole electrode substrate 300 of the present invention according to this embodiment includes substrate 302, through hole 304, filler 305, insulating layers 306 and 308, insulating layer 307, and vias 310 and 312. Note that a wiring structure, electronic components, etc. may be further mounted on each of first surface 302a and second surface 302b of substrate 302.

[0052] In this embodiment, the substrate 302 is conductive and may be made of, for example, a semiconductor such as silicon, or a metal such as stainless steel. There is no particular limitation on the thickness of the substrate 302, but it may be set appropriately within the range of, for example, 10 μm to 1 mm.

[0053] Similar to the first and second embodiments, the through hole 304 is a through hole that penetrates through a first opening 304a disposed on a first surface 302a of the substrate 302 and a second opening 304b disposed on a second surface 302b opposite the first surface 302a. The shape of the through hole 304 is not constant but changes from the first opening 304a to the second opening 304b. In other words, the shape of the side wall of the through hole 304 is not constant but changes from the first opening 304a to the second opening 304b. Typically, the second opening 304b is larger than the first opening 304a, and the through hole 304 has a constriction (constricted portion) between the first opening 304a and the second opening 304b. More specifically, through hole 304 has minimum opening 304c having minimum area M in plan view (i.e., when viewed from the top), inflection point 304d (a curve having inflection point 304d) where the sidewall of through hole 304 changes along a curve in cross-sectional view (i.e., when viewed from the A-A' cross section), and maximum opening 304e having maximum area L in plan view (i.e., when viewed from the top). In this embodiment, inflection point 304d of through hole 304 is located closer to second opening 304b than the center of through hole 304, but this is not limited thereto, and inflection point 304d of through hole 304 may be located closer to first opening 304a than the center of through hole 304. Note that through hole 304 can be formed by subjecting substrate 302 to etching, laser processing, sandblasting, or the like. There is no particular limitation on the size of the through-holes 304, but it is preferable that the size of the maximum opening 304e is 200 μm or less in order to achieve a narrow pitch.

[0054] An insulating layer 307 and a filler 305 are disposed inside the through hole 304. The insulating film 307 is disposed on the sidewall of the through hole 304, and a portion of the insulating film 307 is disposed on the first and second surfaces of the substrate 302. In this embodiment, the filler 305 is a conductive material, and a conductive material such as a deposit of a metal such as Cu, a conductive paste containing Cu, or a conductive resin is used. When a metal such as Cu is used as the filler 305, an electroplating filling method is used. When a fluid conductive paste or conductive resin is used as the filler 305, the through hole 304 is filled with the conductive paste or conductive resin using a spatula or scraper, and then heat treatment or the like is performed to form the filler 305.

[0055] The insulating layers 306 and 308 are respectively disposed on the first surface 302a and the second surface 302b of the substrate 302, either directly or via an intermediate layer (not shown). The insulating layers 306 and 308 are formed of an insulating resin material such as polyimide or benzocyclobutene, and may be any insulating material having a gas release function. The insulating layers 306 and 308 act as gas release sections that release (permeate) gas generated and released within the through-hole 304 to the outside. At least one of the insulating layers (gas release sections) 306 and 308 is disposed so as to contact the filler 305 exposed on the first and second surfaces of the substrate 302. Furthermore, if a gap exists between the sidewall of the through-hole 304 and the filler 305, the insulating layer (gas release section) 306 and 308 may be disposed between the sidewall of the through-hole 304 and the filler 305, that is, the insulating layers 306 and 308 may be disposed between the sidewall of the through-hole 304 and the filler 305. The insulating layers 306 and 308 are formed by, for example, using a photosensitive insulating material and subjecting it to desired patterning by photolithography.

[0056] In the through hole electrode substrate 300 according to this embodiment, as described above, the through hole 304 has a minimum opening 304c, an inflection point 304d, and a maximum opening 304e. The through hole 304 is filled with a filler 305. As shown in FIG. 3 , the amount of filler 305 is greater in the portion of the through hole 304 on the second surface 302b side than in the portion of the through hole 304 on the first surface 302a side, resulting in a greater amount of released gas. Therefore, the contact area of ​​the gas release portion 306 on the second surface side with the filler 305 may be made larger than the contact area of ​​the gas release portion 308 on the first surface 302a side with the filler 305, thereby increasing the amount of gas released from the gas release portion 308 on the second surface 302b side. Furthermore, because the second opening 304b is larger than the first opening 304a, the above-described contact area relationship can be easily achieved by making the diameters of the vias 310 and 312 approximately the same.

[0057] The vias 310 and 312, which are openings, are holes formed in the insulating layers (gas release portions) 306 and 308, respectively. Although not shown for convenience of explanation, wiring is formed in the vias 310 and 312 by plating or sputtering. These wirings contact the filler 305 arranged in the through hole 304, and these wirings are electrically connected to each other. As shown in FIG. 3(b), the vias 310 and 312, which are openings in the insulating layers (gas release portions) 306 and 308, are formed so as to overlap the first opening 304a and the second opening 304b of the substrate 302, respectively. In other words, the vias 310 and 312, which are openings in the insulating layers (gas release portions) 306 and 308, are positioned directly above the first opening 304a and the second opening 304b of the substrate 302, respectively. Furthermore, the vias 310 and / or 312, which are openings in the insulating layers (gas releasing portions) 306 and 308, may be formed so as to overlap the first opening 304a and the second opening 304b of the substrate 302, respectively.

[0058] In the through hole electrode substrate 300 according to this embodiment, as described above, the through hole 304 has a minimum opening 304c, an inflection point 304d, and a maximum opening 304e. The through hole 304 is filled with a filler 305. The difference in size between the first opening 304a and the second opening 304b ensures the filler's ability to fill the through hole 304. When a force acts on the filler 305 toward the first surface 302a, the presence of the inflection point 304d prevents the filler 305 from falling off the substrate 300. When a force acts on the filler 305 toward the second surface 302a, the presence of the minimum opening 304c prevents the filler 305 from falling off the substrate 300. The through hole electrode substrate 300 according to this embodiment may have both or only one of the minimum opening 304c and the maximum opening 304d. Therefore, in the through hole electrode substrate 300 of the present invention according to this embodiment, the filling property of the filler 305 can be ensured, and the filler 305 can be prevented from falling off in either the up or down direction.

[0059] Furthermore, in through hole electrode substrate 300 of the present invention according to this embodiment, as described above, at least one of insulating layers (gas release portion) 306 and 308 is arranged so as to contact filler 305 exposed on first surface 302a and second surface 302b of substrate 302. Therefore, insulating layers (gas release portion) 306 and / or 308 can release gas generated and released within through hole 304 to the outside, eliminating problems caused by gas accumulating in through hole 304 and preventing filler 305 from falling out of through hole 304, making it possible to provide a highly reliable through hole electrode substrate.

[0060] It is preferable that there be no space between insulating layer 307 arranged on the side wall of through hole 304 and filler 305, but there may be cases where a small space or gap occurs between insulating layer 307 and filler 305. Even when such a space or gap occurs, in through hole electrode substrate 300 of the present invention according to this embodiment, it is possible to prevent filling portion 305 from falling off.

[0061] (Fourth embodiment) The configuration of a through hole electrode substrate 400 of the present invention according to a fourth embodiment will be described with reference to Fig. 4. Fig. 4(A) is a plan view of the through hole electrode substrate 400 of the present invention according to this embodiment, viewed from above. Fig. 4(B) is a cross-sectional view taken along line A-A' in Fig. 4(A). For ease of explanation, both Figs. 4(A) and (B) show a portion of the through hole electrode substrate 400 of the present invention according to this embodiment.

[0062] Through hole electrode substrate 400 of the present invention according to this embodiment includes substrate 402, through hole 404, filler 405, insulating layers 406 and 408, insulating layer 407, conductive film 409, and vias 410 and 412. Note that a wiring structure, electronic components, etc. may be further mounted on each of first surface 402a and second surface 402b of substrate 402.

[0063] In this embodiment, the substrate 402 is conductive and may be made of, for example, a semiconductor such as silicon, or a metal such as stainless steel. There is no particular limitation on the thickness of the substrate 402, but it may be set appropriately within the range of, for example, 10 μm to 1 mm.

[0064] The through hole 404 is a through hole that penetrates through a first opening 404a arranged on a first surface 402a of the substrate 402 and a second opening 404b arranged on a second surface 402b, which is the surface opposite the first surface 402a. As in the above-described first to third embodiments, the through hole 404 has a shape that is not constant but changes from the first opening 404a to the second opening 404b. In other words, the shape of the side wall of the through hole 404 is not constant but changes from the first opening 404a to the second opening 404b. Typically, the second opening 404b is larger than the first opening 404a, and the through hole 404 has a constriction (constricted portion) between the first opening 404a and the second opening 404b. More specifically, through hole 404 has a minimum opening 404c having a minimum area M in a plan view (i.e., when viewed from the top), an inflection point 404d (a curve having inflection point 404d) where the sidewall of through hole 404 changes along a curve in a cross-sectional view (i.e., when viewed from the A-A' cross section), and a maximum opening 404e having a maximum area L in a plan view (i.e., when viewed from the top). In this embodiment, inflection point 404d of through hole 404 is located closer to second opening 404b than the center of through hole 404, but this is not limited thereto, and inflection point 404d of through hole 404 may be located closer to first opening 404a than the center of through hole 404. Note that through hole 404 can be formed by subjecting substrate 402 to etching, laser processing, sandblasting, or the like. There is no particular limitation on the size of the through holes 404, but it is preferable that the size of the maximum opening 404e is 200 μm or less in order to achieve a narrow pitch.

[0065] An insulating layer 407, a conductive film 409, and a filler 405 are disposed inside the through hole 404. The insulating layer 407 is disposed on the sidewall of the through hole 404, and a portion of the insulating layer 407 is disposed on the upper part of the first and second surfaces of the substrate 402. The conductive film 409 is disposed on the insulating layer 407 side of the through hole 404, and a portion of the conductive film 409 is disposed on the upper part of the first and second surfaces of the substrate 402. In this embodiment, the filler 405 is an insulating material, and for example, an organic material such as polyimide or benzocyclobutene, or an inorganic material such as silicon oxide or silicon nitride is used. The conductive film 407 can be formed by a method such as plating or CVD. The filler 405 can be formed by a method such as suction or pushing.

[0066] The insulating layers 406 and 408 are formed on the first surface 402a and the second surface 402b of the substrate 402, respectively. b directly or via an intermediate layer (not shown). The insulating layers 406 and 408 are formed of an insulating resin material such as polyimide, and may be any insulator having a gas release function. The insulating layers 406 and 408 act as gas release sections that release (permeate) gas generated and released within the through-holes 404 to the outside. In this embodiment, the insulating layers (gas release sections) 406 and 408 are arranged to cover and contact the filler 405 exposed on the first surface 402a and the second surface 402b of the substrate 402. At least one of the insulating layers (gas release sections) 406 and 408 may be arranged to contact the filler 405 exposed on the first surface 402a and the second surface 402b of the substrate 402. Furthermore, when a gap exists between the side wall of through hole 404 and filler 405, part of insulating layers (gas release portions) 406 and 408 may be disposed between the side wall of through hole 404 and / or insulating layer 407 and filler 405, that is, insulating layers 406 and 408 may be arranged between the side wall of through hole 404 and filler 405. Insulating layers 406 and 408 are formed by, for example, using a photosensitive insulating material and performing a desired patterning by photolithography.

[0067] In the through hole electrode substrate 400 according to this embodiment of the present invention, as described above, the through hole 404 has a minimum opening 404c, an inflection point 404d, and a maximum opening 404e. The through hole 404 is filled with a filler 405. As shown in FIG. 4 , the amount of filler 405 is greater in the portion of the through hole 404 on the second surface 402b side than in the portion of the through hole 404 on the first surface 402a side, resulting in a greater amount of released gas. Therefore, the area where the gas release portion 406 on the second surface 402b side contacts the filler 405 may be made larger than the area where the gas release portion 408 on the first surface 402a side contacts the filler 405, thereby increasing the amount of gas released from the gas release portion 408 on the second surface 402b side. Furthermore, since second opening 404b is larger than first opening 404a, the above-mentioned contact area relationship can be easily obtained by making via 410 and via 412 have approximately the same diameter.

[0068] The vias 410 and 412, which are openings, are holes formed in the insulating layers (gas release portions) 406 and 408 on the conductive film 409 on the first and second surfaces, respectively. Although not shown for ease of explanation, wiring is formed in the vias 410 and 412 by plating or sputtering. These wirings contact the conductive films 409 on the first surface 402a and the second surface 402b, and are electrically connected to each other. Furthermore, portions of the vias 410 and / or 412, which are openings in the insulating layers (gas release portions) 406 and 408, may be formed to overlap the first opening 404a and the second opening 404b of the substrate 402, respectively.

[0069] In the through hole electrode substrate 400 according to this embodiment, as described above, the through hole 404 has a minimum opening 404c, an inflection point 404d, and a maximum opening 404e. The through hole 404 is filled with a filler 405. The difference in size between the first opening 404a and the second opening 404b ensures the filler's ability to fill the through hole 404. When a force acts on the filler 405 in the direction of the first surface 402a, the presence of the inflection point 404d prevents the filler 405 from falling off the substrate 400. When a force acts on the filler 405 in the direction of the second surface, the presence of the minimum opening 404c prevents the filler 405 from falling off the substrate 400. The through hole electrode substrate 400 according to this embodiment may have both or only one of the minimum opening 404c and the maximum opening 404d. Therefore, in the through hole electrode substrate 400 of the present invention according to this embodiment, the filling property of the filler 405 can be ensured, and the filler 405 can be prevented from falling off in either the up or down direction.

[0070] Furthermore, in the through hole electrode substrate 400 according to this embodiment of the present invention, as described above, at least one of the insulating layers (gas releasing portion) 406 and 408 is disposed so as to be in contact with the filler 405 exposed on the first surface 402a and the second surface 402b of the substrate 402. The edge layer (gas release section) 406 and / or 408 can release the gas generated and released within this through-hole 404 to the outside, eliminating problems caused by gas accumulating in gas pockets within the through-hole 404 and preventing the filling material 405 within the through-hole 404 from falling off, thereby providing a highly reliable through-hole electrode substrate.

[0071] It is preferable that there is no space between conductive film 409 arranged in through-hole 404 and filler 205, but there may be some space or gap between conductive film 209 and filler 405. Even if such a space or gap occurs, in through-hole electrode substrate 400 of the present invention according to this embodiment, it is possible to prevent filling portion 405 from falling off.

[0072] (Fifth embodiment) Fig. 5(A) is a cross-sectional view of the through hole electrode substrate 100 of the present invention according to this embodiment. Fig. 5(B) is an enlarged view of the portion 104f in Fig. 5(A). For ease of explanation, Figs. 4(A) and (B) both show a portion of the through hole electrode substrate 100 of the present invention according to this embodiment.

[0073] 5(A), in through hole electrode substrate 100 of the present invention according to this embodiment, connecting portion 104f with the first surface of first opening 104a of through hole 104 has a curved surface. Also, connecting portion 104g with the second surface of second opening 104b of through hole 104 has a curved surface. The other configurations are the same as those in embodiment 1, so description thereof will be omitted.

[0074] In through hole electrode substrate 100 of the present invention according to this embodiment, connecting portions 104f and 104g of through hole 104 each have a curved surface, which makes it easier to fill with filler 405.

[0075] Furthermore, in the other embodiments 2 to 4 described above, a configuration similar to this embodiment can be adopted by making the connection portion between the first surface of the first opening of the through hole have a curved surface, and by making the connection portion between the first surface of the second opening of the through hole have a curved surface.

[0076] (Sixth embodiment) The configuration of a through hole electrode substrate 100 of the present invention according to a sixth embodiment will be described with reference to Fig. 6. Fig. 6(A) is a plan view of a through hole electrode substrate 400 of the present invention according to this embodiment, viewed from above. Fig. 6(B) is a cross-sectional view taken along line A-A' in Fig. 4(A). For ease of explanation, both Figs. 6(A) and (B) show a portion of the through hole electrode substrate 100 of the present invention according to this embodiment.

[0077] 5(A), in the through hole electrode substrate 100 of the present invention according to this embodiment, in the through hole electrode substrate 100 of the present invention according to embodiment 1, the inflection point 104d of the through hole 104 is positioned closer to the first opening 104a than the center of the through hole 104. The other configurations are the same as those of embodiment 1, and therefore description thereof will be omitted.

[0078] Furthermore, in the other embodiments 2 to 5 described above, the same configuration as this embodiment can be adopted by locating the inflection point of the through hole closer to the first opening than the center of the through hole.

[0079] Seventh embodiment The configuration of a through hole electrode substrate 100 of the present invention according to a seventh embodiment will be described with reference to FIG. 7. FIG. 7(A) is a plan view of the through hole electrode substrate 100 of the present invention according to this embodiment as seen from above. FIG. 7(B) is a cross-sectional view taken along line A-A' in FIG. 7(A). For ease of explanation, both FIGS. 7(A) and (B) show only a portion of the through hole electrode substrate 100 of the present invention according to this embodiment. are.

[0080] In the through hole electrode substrate 100 according to this embodiment, as shown in FIG. 7(A), the openings (vias) 110 and 112 of the gas release sections 106 and 108 in the through hole electrode substrate 100 according to the first embodiment are provided so that their areas increase in plan view (i.e., when viewed from above) as they move away from the substrate 102. In other words, in a cross-sectional view (i.e., when viewed from the A-A' cross section), the angle α between the gas release sections 106 and 108 and the filler 105 is approximately 45 degrees to approximately 89 degrees. The other configurations are the same as those in the first embodiment, and therefore description thereof will be omitted. The insulating layers 106 and 108 are formed by, for example, using a photosensitive insulating material and performing a desired patterning by photolithography. By adjusting the exposure conditions, the openings (vias) 110 and 112 of the gas release sections 106 and 108 can be formed so that their areas increase in plan view as they move away from the substrate 102.

[0081] In the through hole electrode substrate 100 of the present invention according to this embodiment, by having the above-mentioned configuration, it is possible to prevent disconnection of the wiring arranged in the opening (via).

[0082] 8(A) and 8(B) show schematic plan views of through hole electrode substrate 100 according to this embodiment. In this embodiment, openings (vias) 110 and 112 of gas release sections 106 and 108 are provided so that their areas increase in plan view (i.e., when viewed from above) as they move away from substrate 102. This reduces the areas of openings (vias) 110 and 112 above filler 105, ensuring contact between openings (vias) 110 and 112 and filler 105. This reduces the possibility of poor contact due to misalignment when openings (vias) 110 and 112 are formed.

[0083] For example, Fig. 8(A) shows a case where opening (via) 110 on filling material 105 is shifted to the right. Fig. 8(B) shows a case where opening (via) 110 on filling material 105 is shifted to the right, causing a portion of opening (via) 110 to be removed from filling material 105. Even in the cases shown in Figs. 8(A) and (B), contact between openings (vias) 110 and 112 and filling material 105 can be ensured, thereby reducing the possibility of contact failure due to misalignment of openings (vias) 110 and 112.

[0084] Furthermore, in the above-described other embodiments 2 to 4, the same configuration as this embodiment can be adopted, as shown in Figures 9 to 11. This will be explained below.

[0085] 9(A), in through hole electrode substrate 200 of the present invention according to this embodiment, openings (vias) 210 and 212 of gas release portions 206 and 208 in through hole electrode substrate 200 of the present invention according to embodiment 2 are provided so that their areas increase in plan view (i.e., when viewed from the top) as they move away from substrate 202. In other words, in cross-sectional view (i.e., when viewed from the A-A' cross section), angle α between gas release portions 206 and 208 and filler 205 is approximately 45 degrees to approximately 89 degrees. The other configurations are the same as those in embodiment 2, and therefore description thereof will be omitted.

[0086] 10(A), in through hole electrode substrate 300 of the present invention according to this embodiment, openings (vias) 310 and 312 of gas release portions 306 and 308 are provided so that their areas increase in plan view (i.e., when viewed from above) as they move away from substrate 302. In other words, in cross-sectional view (i.e., when viewed from the A-A' cross section), angle α between gas release portions 306 and 308 and filler 305 is approximately 45 degrees to approximately 89 degrees. The other configurations are the same as those in embodiment 3, and therefore description thereof will be omitted.

[0087] 11(A), in through hole electrode substrate 400 of the present invention according to this embodiment, openings (vias) 410 and 412 of gas release portions 406 and 408 are provided so that their areas increase in plan view (i.e., when viewed from above) as they move away from substrate 402. In other words, in cross-sectional view (i.e., when viewed from the A-A' cross section), angle α between gas release portions 406 and 408 and filler 405 is approximately 45 degrees to approximately 89 degrees. The other configurations are the same as those in embodiment 4, and therefore description thereof will be omitted.

[0088] As described above, in any of the configurations of this embodiment, the area of ​​the opening (via) on the filling material can be reduced and contact between the opening (via) and the filling material can be ensured, thereby reducing the possibility of contact failure due to misalignment when forming the opening (via).

[0089] (Eighth embodiment) The configuration of a semiconductor device 1000 according to an eighth embodiment of the present invention will be described with reference to Figures 12 to 14. In this embodiment, a semiconductor device 1000 using the through electrode substrate according to the first to seventh embodiments will be described.

[0090] FIG. 12 is a diagram showing a semiconductor device 1000 according to this embodiment. The semiconductor device 1000 includes three through hole electrode substrates 100 according to the present invention stacked one on the other and connected to an LSI substrate (semiconductor substrate) 500. A wiring layer 502 is provided on the LSI substrate 500. A semiconductor element such as a DRAM is disposed on the through hole electrode substrate 100. A wiring layer 120 is provided on the through hole electrode substrate 100. As shown in FIG. 12, the wiring layer 502 of the LSI substrate 500 and the wiring layer 120 of the through hole electrode substrate 100 are connected via bumps 1002. The bumps 1002 may be made of a metal such as indium, copper, or gold. Also, as shown in FIG. 12, the wiring layer 120 of one through hole electrode substrate 100 and the wiring layer 120 of another through hole electrode substrate 100 are connected via bumps 1002.

[0091] When the through hole electrode substrates 100 are stacked, the number of layers is not limited to three, but may be two, four, or more. Furthermore, the connection between the through hole electrode substrate 100 and another substrate is not limited to using bumps, and other bonding techniques such as eutectic bonding may also be used. Furthermore, the through hole electrode substrate 100 and another substrate may be bonded by applying and baking polyimide, epoxy resin, or the like.

[0092] 13 is a diagram showing another example of the semiconductor device 1000 according to this embodiment of the present invention. The semiconductor device 1000 shown in FIG. 13 includes semiconductor chips (LSI chips) 600 and 602 such as a MEMS device, a CPU, a memory, and an IC, and a through electrode substrate 100 stacked and connected to an LSI substrate 500.

[0093] A through hole electrode substrate 100 is disposed between a semiconductor chip 6000 and a semiconductor chip 602, and the two are connected by bumps 1002. The semiconductor chip 600 is mounted on an LSI substrate 500, and the LSI substrate 500 and the semiconductor chip 602 are connected by wires 604. In this example, the through hole electrode substrate 100 is used as an interposer for stacking multiple semiconductor chips for three-dimensional mounting, and stacking multiple semiconductor chips with different functions can create a multi-function semiconductor device. For example, by configuring the semiconductor chip 600 as a three-axis acceleration sensor and the semiconductor chip 602 as a two-axis magnetic sensor, a semiconductor device can be realized that implements a five-axis motion sensor in a single module.

[0094] If the semiconductor chip is a sensor formed by a MEMS device, In some cases, the measurement results are output as analog signals. In this case, low-pass filters, amplifiers, etc. may also be formed on the semiconductor chips 600 and 602 or the through-hole electrode substrate 100.

[0095] Fig. 14 is a diagram showing another example of the semiconductor device 1000 according to this embodiment. The two examples described above (Figs. 12 and 13) were three-dimensional implementations, but in this example, the through hole electrode substrate 100 is applied to a combined two-dimensional and three-dimensional implementation. In the example shown in Fig. 14, six through hole electrode substrates 100 are stacked and connected to an LSI substrate 500. However, not only are all the through hole electrode substrates 100 arranged in a stacked manner, but they are also arranged side by side in the in-plane direction of the substrate.

[0096] 14, two through electrode substrates 100 are connected onto an LSI substrate 500, and further through electrode substrates 100 are connected onto these through electrode substrates 100, and further through electrode substrates 100 are connected onto the through electrode substrates 10. As in the example shown in FIG. 13, even if the through electrode substrate 100 is used as an interposer for connecting multiple semiconductor chips, such combined two-dimensional and three-dimensional mounting is possible. For example, some of the through electrode substrates 100 may be replaced with semiconductor chips.

[0097] Furthermore, in the examples of Figures 12 to 14, an example is shown in which the through electrode substrate 100 of the present invention according to the first embodiment is used as the through electrode substrate, but this is not limited to this, and the through electrode substrates 200, 300 and / or 400 of the present invention according to other embodiments may also be used.

[0098] The semiconductor device 1000 of the present invention according to this embodiment is mounted in various electrical devices, such as mobile terminals (mobile phones, smartphones, notebook personal computers, etc.), information processing devices (desktop personal computers, servers, car navigation systems, etc.), and home appliances. [Explanation of symbols]

[0099] 100, 200, 300, 400 through-hole electrode substrate 102, 202, 302, 402 boards 104, 204, 304, 404 through holes 105, 205, 305, 405 filling 106, 108, 206, 208, 306, 308, 406, 408 Insulation layer 207, 409 Conductive film 307, 407 Insulation layer 110, 112, 210, 212, 310, 312, 410, 412 vias (openings)

Claims

1. A substrate having a through hole that penetrates the first opening on the first surface and the second opening on the second surface, The filling material provided inside the through hole, An insulating resin layer covering at least one of the first surface and the second surface, and the filler, Equipped with, The second opening is larger than the first opening. A through-electrode substrate having a minimum opening smaller than the first opening between the first and second openings.

2. The through-electrode substrate according to claim 1, wherein the insulating resin layer is permeable to gas.

3. The through-electrode substrate according to claim 1, further comprising an insulating film disposed between the filler and the side wall of the through-hole.

4. The through-electrode substrate according to claim 1, wherein at least one of the connection portion between the first opening and the first surface, and the connection portion between the second opening and the second surface, of the through-hole has a curved surface.

5. The through-electrode substrate according to claim 1, wherein the insulating resin layer has an opening.

6. The through-electrode substrate according to claim 5, wherein the opening in the insulating resin layer has a tapered shape.

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