Light-emitting device

Abstract

To provide a display device excellent in display quality, a display device with high reliability, a display device resistant to damage, a display device consuming less power, and an electronic apparatus.SOLUTION: A display device includes a plurality of display areas each having different normal direction. A plurality of sub-pixels composing a pixel is arranged in different directions for each display area. For each display area, the plurality of sub-pixels each has an inclination to a front face of the area, and is arranged in different directions. Alternatively, the plurality of sub-pixels has different normal directions near the center of the area and is arranged in different directions, for each display area.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One aspect of the present invention relates to an article, a method, or a manufacturing method. Process, machine, manufacture, or composition of matter In particular, one embodiment of the present invention relates to a light-emitting device, a display device, an electronic device, a lighting device, or This document relates to methods for making, using, and operating such devices. Light emission using the electroluminescence (EL) phenomenon Devices, displays, electronic devices, lighting devices, or methods for making, using, or operating them etc.

[0002] In this specification, a semiconductor device is a device that can function by utilizing semiconductor characteristics. This refers to the whole. Transistors and semiconductor circuits can be considered semiconductor devices. Display devices, light-emitting devices, electro-optical devices, and electronic equipment often include semiconductor devices. be. [Background technology]

[0003] In recent years, light-emitting devices and display devices are expected to be used in a variety of applications, and diversification is required. There are.

[0004] For example, in light-emitting devices and display devices for mobile devices, etc., it is important that the device is thin and lightweight. There are demands for the material to be applicable to curved surfaces, be resistant to breakage, and so on.

[0005] In addition, light-emitting elements (also referred to as EL elements) that utilize the EL phenomenon can be easily made thin and lightweight, and the input signal It has features such as high speed response to signals and can be driven using a low voltage DC power supply. Applications to display devices are being considered.

[0006] For example, Patent Document 1 discloses a method for forming a transistor or an organic EL display device on a film substrate. A flexible active matrix display device including an EL element is disclosed. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2003-174153 Summary of the Invention [Problem to be solved by the invention]

[0008] In the display device 900 shown in FIG. 19(A), the display area 131 is the area 160 facing the viewer. 19(B) and 19(C), the display area 131 has an area 170 that does not face the viewer. (C) is a cross-sectional view of the portion Q1-Q2 indicated by the dashed line in FIG. 19(A). 19(B) shows the state where the region 170 is bent, and FIG. 19(C) shows the state where the region 170 is curved. 19(B) and 19(C) show the bending state at the portion Q1-Q2. The direction of the normal near the center of the region 160 is shown as normal 168, and the direction of the normal near the center of the region 170 is shown as normal 168. The direction of the normal to this is shown as normal 178. In either case of FIG. 19(B) or FIG. 19(C), Even if the normal direction near the center of the region 160 is different from the normal direction near the center of the region 170, It has become.

[0009] The display device 900 also includes a substrate 111 and a substrate 121. The light emitting element and the coloring layer are disposed between the regions 16 and 21 (not shown). 19(E) is an enlarged view of a portion 161 that is a part of the display area 131 in FIG. 1 is an enlarged view of a portion 171 that is part of the display area 131 in the area 170.

[0010] The display area 131 has a plurality of pixels arranged in a matrix. The three sub-pixels are arranged in a stripe pattern, and each sub-pixel is a red In FIG. 19(D), the pixels in the region 160 are designated as pixels 165. The subpixel that emits red light is designated as subpixel 165R, and the subpixel that emits green light is designated as subpixel 16 The subpixel emitting blue light is shown as subpixel 165B. The pixels in region 170 are designated as pixels 175, the red light emitting subpixels are designated as subpixels 175R, The subpixel that emits green light is designated as subpixel 175G, and the subpixel that emits blue light is designated as subpixel 175B. It shows.

[0011] Next, a state in which the observer 910 views the image displayed in the area 160 will be described. FIG. 20(A) shows the relationship between the observer 910 and the light 235 emitted from the pixel 165. 20A is a schematic cross-sectional view of a pixel 165. FIG.

[0012] The sub-pixel 165R has a light-emitting element 125 and a colored layer 266R. The subpixel 165B has the light-emitting element 125 and the colored layer 266G. 6B. Light 235 emitted from the light emitting element 125 is colored when passing through the colored layer. can be.

[0013] For example, in the sub-pixel 165G, the light emitted from the light-emitting element 125 included in the sub-pixel 165G is The white light 235 is converted into green light 235 by the colored layer 266G and is projected onto the observer 910. It should be noted that a part of the white light 235 emitted from the light emitting element 125 reaches the other sub-pixels. However, in the region 160, the light entering the color layer may be converted to an unintended color. Since the viewer 910 and the display area 131 are directly opposite to each other, the light 235 converted into an unintended color is It is difficult for the observer 910 to recognize.

[0014] Next, a state in which the observer 910 views the image displayed in the area 170 will be described. FIG. 20B shows the relationship between the observer 910 and the light 235 emitted from the pixel 175. 20(B) is a schematic cross-sectional view of a pixel 175.

[0015] The subpixel 175R has a light-emitting element 125 and a colored layer 266R. The subpixel 175B has the light-emitting element 125 and the colored layer 266G. 6B. Light 235 emitted from the light emitting element 125 is colored when passing through the colored layer. can be.

[0016] In the area 170, the viewer 910 and the display area 131 do not face each other. The light 235 emitted from the light emitting element 125 is incident on the colored layer of another sub-pixel and is not reflected as intended. We observe some light 235 converted into a color that does not exist.

[0017] In this way, in a display device having a display area that faces the viewer and an area that does not face the viewer, Therefore, the display quality within the display area tends to vary greatly, and the display quality tends to deteriorate.

[0018] One embodiment of the present invention aims to provide a display device or an electronic device with excellent visibility. It shall be one.

[0019] Another embodiment of the present invention is to provide a display device or an electronic device with high display quality. One of the objectives is to

[0020] Another embodiment of the present invention is to provide a highly reliable display device or electronic device. This is one of the objectives.

[0021] Another embodiment of the present invention is to provide a display device or electronic device that is less likely to be damaged. This is one of the objectives.

[0022] Another embodiment of the present invention is to provide a display device or an electronic device with low power consumption. This is one of the objectives.

[0023] Another embodiment of the present invention is to provide a novel display device or electronic device. It shall be one.

[0024] The description of these problems does not preclude the existence of other problems. It is not necessary for the present invention to solve all of these problems. The above will be made clear from the description, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0025] One aspect of the present invention is a display device having a display area including a first area and a second area. a pixel having a plurality of sub-pixels, an arrangement direction of the sub-pixels in the first region; The display device is characterized in that the arrangement direction of the sub-pixels in the second region is different.

[0026] Alternatively, one embodiment of the present invention is a display device including a first display region and a second display region each having a pixel. and a surface of the first display area is inclined relative to a surface of the second display area, The pixel has a plurality of sub-pixels, and the arrangement direction of the sub-pixels in the first display region and the arrangement direction of the sub-pixels in the second display region are The display device is characterized in that the arrangement directions of the sub-pixels in the respective pixel regions are different.

[0027] Alternatively, one embodiment of the present invention is a display device having a display area including a first area and a second area. The direction of the normal near the center of the first region is different from the direction of the normal near the center of the second region. The display region has a plurality of pixels, each of the pixels having a plurality of sub-pixels, and the sub-pixels in the first region A display characterized in that the arrangement direction of the pixels is different from the arrangement direction of the sub-pixels in the second region. It is a device.

[0028] Alternatively, one embodiment of the present invention is a display device including a first display region and a second display region each having a pixel. and the pixel has a first sub-pixel and a second sub-pixel, and in the first display region The first subpixel and the second subpixel are arranged in a first direction, and in the second display region, The first and second subpixels are arranged in a second direction, and the first direction is different from the second direction. This is a display device characterized by the above. [Effects of the Invention]

[0029] According to one embodiment of the present invention, a display device or an electronic device with excellent visibility can be provided. can.

[0030] According to another embodiment of the present invention, a display device or an electronic device with high display quality is provided. It is possible.

[0031] According to another embodiment of the present invention, a highly reliable display device or electronic device is provided. It is possible.

[0032] According to another embodiment of the present invention, a display device or electronic device that is less likely to be damaged is provided. It is possible.

[0033] According to another embodiment of the present invention, a display device or an electronic device with low power consumption is provided. It is possible.

[0034] According to another embodiment of the present invention, a novel display device or electronic device can be provided. The description of these effects does not preclude the existence of other effects. An embodiment of the present invention does not necessarily have to have all of these effects. The effect of the invention is self-evident from the description, drawings, claims, etc. It is possible to extract other effects from descriptions in the specification, drawings, claims, etc. [Brief explanation of the drawings]

[0035] [Figure 1] 1A to 1C illustrate one embodiment of a display device. [Figure 2] 1A to 1C illustrate one embodiment of a display device. [Figure 3] 1A to 1C illustrate one embodiment of a display device. [Figure 4] 1A and 1B are a block diagram and a circuit diagram illustrating one embodiment of a display device. [Figure 5] 1A and 1B are diagrams illustrating an example of the configuration of a pixel. [Figure 6] FIG. 2 is a cross-sectional view illustrating a configuration example of a pixel. [Figure 7] FIG. 2 is a cross-sectional view illustrating a configuration example of a pixel. [Figure 8] FIG. 2 is a cross-sectional view illustrating a configuration example of a pixel. [Figure 9] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 10] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 11] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 12] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 13] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 14] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 15] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 16] 1A to 1C illustrate one embodiment of a display device. [Figure 17] 1A to 1C illustrate a configuration example of a light-emitting element. [Figure 18] 3A and 3B are diagrams illustrating an example of a planar shape and arrangement of pixels. [Figure 19] A diagram explaining the problem. [Figure 20] A diagram explaining the problem. [Figure 21] 1A to 1C illustrate one embodiment of a display device. [Figure 22] 1A to 1C illustrate one embodiment of a display device. [Figure 23] 1A to 1C illustrate examples of electronic devices. [Figure 24] 1A to 1C illustrate one embodiment of a display device. [Figure 25] 1A to 1C illustrate one embodiment of a display device. DETAILED DESCRIPTION OF THE INVENTION

[0036] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention may be modified in various forms and details without departing from the spirit and scope of the present invention. Therefore, the present invention is based on the following embodiments. It should be noted that the following description of the invention is not intended to be limiting. In this case, the same reference numerals are used in common between different drawings to designate the same parts or parts having similar functions. Therefore, the repeated explanation will be omitted.

[0037] In each drawing described in this specification, the size of each component, the thickness of a layer, or the area is The figures may be exaggerated or abbreviated for clarity. In particular, in top and perspective views, some parts may be The description of the components may be omitted.

[0038] In addition, the position, size, range, etc. of each component shown in the drawings are for the purpose of facilitating understanding of the invention. Therefore, the actual location, size, range, etc. may not be shown. The invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings. In the actual manufacturing process, resist masks, etc., may be unintentionally damaged by etching or other processes. However, in order to make it easier to understand, it may be omitted.

[0039] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. It does not indicate any order or ranking such as the order of processes or stacking. In addition, even if a term is not accompanied by an ordinal number in this specification, etc., it is possible to avoid confusion of the constituent elements. To avoid this, ordinal numbers may be used in the claims.

[0040] In addition, the terms "electrode" and "wiring" used in this specification and the like do not limit the functionality of these components. For example, an "electrode" may be used as part of a "wiring." Furthermore, the terms "electrode" and "wiring" are used interchangeably to refer to the plural "electrodes" and "wirings." This also includes cases where the "line" is formed as a single unit.

[0041] In this specification, the terms "above" and "below" refer to the positional relationship of components directly above or below each other. For example, "electrode on insulating layer A" is not limited to being below and in direct contact with the insulating layer A. If the expression is "B", electrode B does not need to be formed directly on insulating layer A, The inclusion of other components between the edge layer A and the electrode B is not excluded.

[0042] The source and drain functions may also be different when using transistors with different polarities or when using circuits When the direction of the current changes during circuit operation, they are interchanged depending on the operating conditions. Therefore, it is difficult to determine which is the source and which is the drain. In this specification, the terms source and drain may be used interchangeably. Let's say.

[0043] In addition, in this specification, "electrically connected" means "something that has some kind of electrical effect." This includes cases where the device is connected via a " is not subject to any particular restrictions as long as it enables the transmission and reception of electrical signals between connected objects. Therefore, even when it is expressed as "electrically connecting," in an actual circuit, In some cases, there are no physical connections and only wires running.

[0044] In this specification, "parallel" means that two straight lines are at an angle of -10° or more and 10° or less. Therefore, it includes the case where the angle is between -5° and 5°. "Straight" and "orthogonal" mean that two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, it includes cases where the angle is between 85° and 95°.

[0045] In addition, in this specification, when an etching process is performed after a photolithography process, In this case, unless otherwise specified, the resist mask formed in the photolithography process is It shall be removed after the etching process is completed.

[0046] (Embodiment 1) The display device 100 shown in FIG. 1A has a display area 131, an area 160 facing the viewer, and The display area 131 has an area 170 that does not face the viewer. 1B and 1C show the configuration of the semiconductor device shown in FIG. FIG. 1B is a cross-sectional view of the area A1-A2 indicated by the dashed line in FIG. 1(C) shows the state where the region 170 is curved. 1B and 1C show the area around the center of the region 160 in the region A1-A2. The direction of the normal to the region 170 is shown as normal 168, and the direction of the normal to the region 170 near the center is shown as normal 178. In both cases of FIG. 1(B) and FIG. 1(C), the area around the center of the region 160 The direction of the normal to the center of the region 170 is different from the direction of the normal to the center of the region 170.

[0047] The display device 100 also includes a substrate 111 and a substrate 121. The light-emitting element and the coloring layer are disposed between the regions 21 (not shown). 1(E) is an enlarged view of a portion 161 that is a part of the display area 131. 1 is an enlarged view of a portion 171 that is a part of the display area 131 in the area 170. 1(F) is an enlarged view of a portion 181 which is the boundary position between the region 160 and the region 170.

[0048] The display area 131 has a plurality of pixels arranged in a matrix. These sub-pixels are arranged in a stripe pattern, and each sub-pixel is It emits colored light, green light, and blue light.

[0049] FIG. 1 shows a case where the planar shape of the sub-pixel is rectangular. An arrangement in which the long sides of these sub-pixels are arranged horizontally so that they are adjacent is called an "H arrangement." An arrangement in which the long sides of the sub-pixels are arranged vertically so that they are adjacent is called a "V arrangement." The arrangement direction of the columns and the arrangement direction of the V array are different. 1 shows a case where the direction 166 and the arrangement direction 176 of the V arrangement are perpendicular to each other, but the present invention is not limited to this.

[0050] In FIG. 1D, the pixel in region 160 is shown as pixel 165, and the subpixel that emits red light is The subpixels emitting green light are designated as subpixels 165R, the subpixels emitting green light are designated as subpixels 165G, and the subpixels emitting blue light are designated as subpixels 165G. The pixel 165 is shown as pixel 165B. The pixel 165 has three sub-pixels arranged in an H arrangement. do.

[0051] In FIG. 1(E), the pixel in region 170 is shown as pixel 175, and the subpixel that emits red light is The subpixels emitting green light are designated as subpixels 175R, the subpixels emitting green light are designated as subpixels 175G, and the subpixels emitting blue light are designated as subpixels 175G. The pixel 175 is shown as pixel 175B. The pixel 175 has three sub-pixels arranged in a V arrangement. do.

[0052] The color of light emitted by the sub-pixels may be yellow, cyan, magenta, etc., in addition to red, green, and blue. These lights may also be used in combination. For example, one pixel may have four sub-pixels. The sub-pixels may be arranged to emit red, green, blue and yellow light, respectively. This makes it possible to improve the reproducibility of intermediate tones in particular. Also, as shown in Figures 24(A), 24(B), and 24(C), Each pixel may have four sub-pixels that emit red, green, blue, and white light, respectively. By providing a sub-pixel that emits white light, the brightness of the display area can be increased. Depending on the application of the display device, one pixel may be composed of two sub-pixels.

[0053] In FIG. 24(A), the pixels in the region 160 are shown as pixels 165, and the sub-pixels emitting red light are shown as pixels 165. The subpixel that emits green light is the subpixel 165R, the subpixel that emits green light is the subpixel 165G, and the subpixel that emits blue light is the subpixel 165G. The subpixel 165B emits white light, and the subpixel 165W emits white light. The four sub-pixels are arranged in an H arrangement.

[0054] In FIG. 24(B), the pixels in region 170 are shown as pixels 175, and the subpixels 175 emit red light. The subpixel that emits green light is called subpixel 175R, the subpixel that emits green light is called subpixel 175G, and the subpixel that emits blue light is called subpixel 175G. The subpixel 175B emits white light, and the subpixel 175W emits white light. In the example, the four sub-pixels are arranged in a V-shape.

[0055] The occupied area and shape of each sub-pixel may be the same or different. The arrangement method may be other than the stripe arrangement. For example, a delta It is also possible to apply a pixel array, a Bayer array, a pentile array, etc. Examples of the case where the ile arrangement is applied are shown in Figures 25(A), 25(B), and 25(C).

[0056] Next, the effect obtained by arranging the sub-pixels of the pixel 175 in a V arrangement will be explained with reference to FIG. 2 will be used to explain.

[0057] FIG. 2A shows an observer 910 and the distribution of light 235 emitted from pixel 165 in area 160. 2A is a diagram illustrating the relationship between the pixel 165 and the pixel 165 arranged in the direction 166. FIG. 2 is a schematic cross-sectional view seen from an orthogonal direction.

[0058] In the area 160, the viewer 910 and the display area 131 are directly opposite to each other, so the pixel 165 is also Therefore, the light emitted from the light emitting element of the sub-pixel is The light is converted by the colored layer and reaches the viewer 910. For example, in the subpixel 165G, The white light 235 emitted from the light emitting element 125 of the sub-pixel 165G is reflected by the colored layer 266. The light is converted into green light 235 by G and reaches the observer 910. A part of the white light 235 emitted from the sub-pixel is scattered and enters the colored layer of another sub-pixel, resulting in unintended However, in the area 160, the observer 910 and the display area 1 31 faces directly, the light 235 converted into an unintended color by scattering reaches the observer 910. Hard to recognize.

[0059] FIG. 2B shows a viewer 910 and the distribution of light 235 emitted from pixel 175 in area 170. 2B is a diagram illustrating the relationship between the pixel 175 and the pixel 175 in the arrangement direction 176. FIG.

[0060] In the area 170, the viewer 910 and the display area 131 do not face each other. The light 235 emitted from the light emitting element 125 is incident on the colored layer of another sub-pixel and converted. However, the display device 100 exemplified in this embodiment Since the sub-pixels of the pixel 175 are arranged in a V-array, the light reaches the viewer 910. The light 235 that is incident on the colored layer of the other sub-pixel and converted is also substantially the same color as the originally intended color. is converted to

[0061] By arranging the sub-pixels of the pixel 175 in a V arrangement, the display quality of the display device 100 can be improved. Therefore, a display device with excellent visibility can be realized. Furthermore, a display device with good display quality can be realized.

[0062] In this embodiment, the right or left side of the display area 131 of the display device 100 is Although the case of bending or curving has been described, one aspect of the present invention is not limited to this. For example, the upper or lower side of the display area 131 may be bent or curved, or the Even if the corners are bent or curved, the display can be maintained by appropriately setting the arrangement of the sub-pixels. A high-quality display device can be realized.

[0063] Although the example in which the light emitting element 125 emits white light 235 has been described, the present invention can be applied to One embodiment of the configuration is not limited to this. In this case, the light emitting element 125 may emit light in any one of the following colors for each subpixel: Preferably, they emit light of different colors.

[0064] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0065] (Embodiment 2) In this embodiment, a configuration example of the display device 100 will be described with reference to FIG. 3. 1(A) is a schematic cross-sectional view of a portion X1-X2 indicated by a dashed line in FIG.

[0066] <Display device configuration> The display device 100 illustrated in this specification includes a first electrode 115, an EL layer 117, a second electrode 118, and a The light emitting element 125 includes a display region 118 and a terminal electrode 216. A plurality of light emitting elements 125 are formed in the light source 31. A controlling transistor 232 is connected.

[0067] The terminal electrode 216 is connected to the external electrode 1 through the anisotropic conductive connection layer 123 provided in the opening 122. 24. The terminal electrode 216 is electrically connected to the drive circuit 132a, the drive circuit 132b and the drive circuit 133.

[0068] The driving circuit 132a, the driving circuit 132b, and the driving circuit 133 are connected to a plurality of transistors 2 52. The drive circuit 132a, the drive circuit 132b, and the drive circuit 13 3 is a signal supplied from the external electrode 124 to which light emitting element 125 in the display area 131 It has the function of determining whether to supply

[0069] The display device 100 illustrated in this specification has a substrate 111 and a substrate 121 bonded together via an adhesive layer 120. The substrate 111 has an insulating layer 205 formed thereon via an adhesive layer 112. The insulating layer 205 is made of silicon oxide, silicon nitride, silicon oxynitride, or nitride. Silicon oxide, aluminum oxide, aluminum oxynitride, or aluminum nitride oxide It is preferable to form the insulating layer 205 by a single layer or multiple layers. It can be formed by using a VD method, a thermal oxidation method, a coating method, a printing method, or the like.

[0070] In addition, an insulating layer 145 is formed on the substrate 121 via an adhesive layer 142. A light-shielding layer 264 is formed on the substrate 121 via an insulating layer 145. A color layer 266 and an overcoat layer 268 are formed.

[0071] The insulating layer 205 functions as a base layer, and prevents the transistor from being separated from the substrate 111, adhesive layer 112, etc. This can prevent or reduce the diffusion of moisture and impurity elements into the transistor and light emitting element. In addition, the insulating layer 145 functions as a base layer, and prevents the transistor from being exposed to the substrate 121, adhesive layer 142, etc. This can prevent or reduce the diffusion of moisture and impurity elements into the photoresist and light-emitting element. Layer 145 can be formed using the same materials and methods as insulating layer 205 .

[0072] The substrates 111 and 121 are made of organic resin material or glass having a thickness sufficient to provide flexibility. The display device 100 may have a so-called bottom emission structure (lower surface In the case of a display device of a double-side emission type, an EL element is formed on the substrate 111. A material that is transparent to light emitted from the layer 117 is used. In the case of a light-emitting display device or a dual-side light-emitting display device, an EL layer 1 is formed on the substrate 121. A material that is transparent to light emitted from 17 is used.

[0073] Flexible and transparent to visible light that can be used for the substrate 121 and the substrate 111 Examples of materials having this property include polyethylene terephthalate resin and polyethylene naphthalate resin. Fat, polyacrylonitrile resin, polyimide resin, polymethyl methacrylate resin, poly Carbonate resin, polyethersulfone resin, polyamide resin, cycloolefin resin Examples include grease, polystyrene resin, polyamide-imide resin, and polyvinyl chloride resin. If it is not necessary to transmit light, a non-transparent substrate may be used. 21 or the substrate 111, a stainless steel substrate, a stainless steel foil substrate, or the like is used. That's fine.

[0074] The thermal expansion coefficient of the substrate 121 and the substrate 111 is preferably 30 ppm / K or less, and more preferably 10 ppm / K or less. More preferably, the concentration is 10 ppm / K or less. In advance, a film containing nitrogen and silicon such as silicon nitride or silicon oxynitride, or a film containing aluminum nitride or the like is prepared. A protective film with low water permeability, such as a film containing nitrogen and aluminum, may be formed. The substrate 121 and the substrate 111 are structures in which a fibrous body is impregnated with an organic resin (so-called plastics). (also called repreg) may also be used.

[0075] By using such a substrate, it is possible to provide a display device that is less likely to break. This can provide a lightweight display device. Alternatively, it can provide a display device that is easy to bend. This can be done.

[0076] In addition, the transistor 232, the transistor 252, the terminal electrode 216, A wiring 219 is formed. Note that in this embodiment, the transistor 232 and the Transistor 252 is a channel-etched type, which is one of the bottom-gate transistors. Although a transistor is shown as an example, a channel protection transistor or a top gate transistor can also be used. It is also possible to use a transistor or the like. It is also possible to use a dual-gate transistor having a structure in which a gate electrode is sandwiched between gate electrodes.

[0077] The transistor 232 and the transistor 252 may have a similar structure, except that: The size of the transistor (for example, the channel length and the channel width) is can be adjusted appropriately.

[0078] The transistor 232 and the transistor 252 are formed by a gate electrode 206, a gate insulating layer 20 7, a semiconductor layer 208, a source electrode 209a, and a drain electrode 209b.

[0079] The terminal electrode 216, the wiring 219, the gate electrode 206, the source electrode 209a, and the drain The electrode 209b can be formed using the same material and method as the terminal electrode 216. The gate insulating layer 207 is formed using the same material and method as the insulating layer 205. can be done.

[0080] The semiconductor layer 208 may be formed using an amorphous semiconductor, a microcrystalline semiconductor, a polycrystalline semiconductor, or the like. For example, amorphous silicon or microcrystalline germanium can be used. In addition, compound semiconductors such as silicon carbide, gallium arsenide, oxide semiconductors, and nitride semiconductors, An organic semiconductor or the like can be used.

[0081] Oxide semiconductors have a large energy gap of 2.8 eV or more, and are highly sensitive to visible light. In addition, in transistors obtained by processing oxide semiconductors under appropriate conditions, In this case, the off-state current is 100zA (1×) under the temperature conditions in use (for example, 25°C). 10 -19 A) or less, or 10zA (1 x 10 -20 A) and below, and even 1zA(1 x10 -21 A) or less. Therefore, a display device with low power consumption can be provided. It is possible.

[0082] When an oxide semiconductor is used for the semiconductor layer 208, the insulating layer in contact with the semiconductor layer 208 is It is preferable to use an insulating layer containing oxygen.

[0083] In addition, an insulating layer 210 is formed over the transistor 232 and the transistor 252, and an insulating An insulating layer 211 is formed on the layer 210. The insulating layer 210 functions as a protective insulating layer. , impurities from layers above the insulating layer 210 to the transistors 232 and 252 The insulating layer 210 can prevent or reduce the diffusion of metal elements. 5 can be formed using the same materials and methods.

[0084] In addition, in order to reduce the surface irregularities on the surface on which the light emitting element 125 is formed, the insulating layer 211 is subjected to a planarization process. The planarization treatment is not particularly limited, but may be a polishing treatment (for example, a chemical polishing treatment). Chemical Mechanical Polishing (CMP) ) or dry etching treatment.

[0085] In addition, by forming the insulating layer 211 using an insulating material having a planarizing function, the polishing process can be performed. The insulating material having a planarizing function may be, for example, a polyimide resin, Organic materials such as acrylic resins can be used. In addition to the above organic materials, low dielectric constant materials can also be used. In addition, insulating layers formed from these materials can be used. The insulating layer 211 may be formed by stacking a plurality of layers.

[0086] Furthermore, on the insulating layer 211, the light emitting elements 125 and the partition walls 1 for separating the light emitting elements 125 are formed. 14 is formed.

[0087] The display device 100 reflects the light 235 emitted from the light emitting element 125 to the substrate via the colored layer 266. This is a display device with a so-called top emission structure (top emission structure) in which light is emitted from the plate 121 side. do.

[0088] The light emitting element 125 is also formed by a transistor through an opening provided in the insulating layer 211 and the insulating layer 210. The resistor 232 is electrically connected to the input terminal of the power supply 230 .

[0089] Since the substrate 121 is formed to face the substrate 111, the substrate 121 is referred to as a "facing substrate." It may be called the "substrate."

[0090] As shown in FIG. 21(A), a touch sensor may be provided on the substrate 121. By providing the substrate 121 in this way, it is possible to reduce positional deviation when the substrate 121 is bent. The touch sensor is configured using conductive layers 991 and 993. , and an insulating layer 992 is provided between them.

[0091] The conductive layer 991 and / or the conductive layer 993 may be formed of indium tin oxide or indium zinc. It is desirable to use a transparent conductive film such as lead oxide. However, in order to reduce the resistance, 991 and / or the conductive layer 993 may be partially or entirely made of a layer having a low resistance material. For example, aluminum, titanium, chromium, nickel, copper, yttrium, di elemental metals consisting of zinc, molybdenum, silver, tantalum, or tungsten; or An alloy containing this as a main component can be used as a single layer structure or a laminate structure. Metal nanowires may be used as the conductive layer 991 and / or the conductive layer 993. In this case, silver is suitable as the metal. This allows the resistance value to be reduced. Therefore, the sensitivity of the sensor can be improved.

[0092] The insulating layer 992 may be made of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, Aluminum oxide, aluminum oxynitride, or aluminum oxynitride, etc., can be used as a single layer or The insulating layer 992 is preferably formed in a multi-layer structure. The film can be formed by a method such as a coating method or a printing method.

[0093] The touch sensor may be configured using a different substrate instead of the substrate 121. (B) shows an example in which a substrate 994 is used. 994, but one aspect of the embodiment of the present invention is not limited to this. It may be provided under the plate 994 (between the substrate 121 and the substrate 994). The plate 994 may be made of tempered glass to protect the display device from scratches.

[0094] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0095] (Embodiment 3) In this embodiment, a more specific configuration example of the display device 100 will be described with reference to FIG. FIG. 4A is a block diagram illustrating the configuration of the display device 100. Display Device 100 includes a display area 131, a driving circuit 132a, a driving circuit 132b, and a driving circuit 13 3. The driving circuit 132a and the driving circuit 132b function as, for example, a scanning line driving circuit. The driver circuit 133 functions as, for example, a signal line driver circuit. Only one of the driver circuit 132a and the driver circuit 132b may be provided.

[0096] The display devices 100 are arranged substantially parallel to each other and include a driving circuit 132a and / or Alternatively, m wirings 135 whose potentials are controlled by the driving circuit 132b and each of which is approximately parallel to and n wirings 136 whose potentials are controlled by a driving circuit 133. Furthermore, the display area 131 has a plurality of pixel circuits 134 arranged in a matrix. One pixel circuit 134 drives one sub-pixel. 2a, drive circuit 132b, and drive circuit 133 may be collectively referred to as a drive circuit unit. .

[0097] Each wiring 135 is connected to one of the pixel circuits 134 arranged in m rows and n columns in the display area 131. The wiring 1 is electrically connected to n pixel circuits 134 arranged in any row. 36 denotes m pixel circuits 134 arranged in m rows and n columns, each of which is arranged in one of the columns. It is electrically connected to the pixel circuit 134. Both m and n are integers of 1 or more.

[0098] 4(B) and 4(C) show a pixel circuit 134 of the display device shown in FIG. 4(A). 1 shows an example of a circuit configuration that can achieve this.

[0099] [Example of a pixel circuit for a light-emitting display device] The pixel circuit 134 shown in FIG. 4B includes a transistor 431, a capacitor 233, and The display device includes a transistor 232 , a transistor 434 , and a light-emitting element 125 .

[0100] One of the source electrode and the drain electrode of the transistor 431 is connected to a data signal. The transistor 43 is electrically connected to a wiring (hereinafter referred to as a signal line DL_n). The gate electrode of 1 is electrically connected to the wiring to which the gate signal is given (hereinafter referred to as the scanning line GL_m). are connected to the network.

[0101] The transistor 431 is turned on or off to connect the node of the data signal 435.

[0102] One of a pair of electrodes of the capacitor 233 is electrically connected to the node 435, and the other is The source electrode and the drain electrode of the transistor 431 are electrically connected to the gate 437. The other of the electrodes is electrically connected to node 435 .

[0103] The capacitor 233 functions as a storage capacitor that stores data written to the node 435. It has.

[0104] One of the source electrode and the drain electrode of the transistor 232 is connected to the potential supply line VL_a. The other end is electrically connected to node 437. The gate electrode of the second transistor is electrically connected to a node 435 .

[0105] One of the source electrode and the drain electrode of the transistor 434 is electrically connected to the potential supply line V0. and the other is electrically connected to a node 437. The gate electrode is electrically connected to the scanning line GL_m.

[0106] One of the anode and the cathode of the light emitting element 125 is electrically connected to the potential supply line VL_b. and the other is electrically connected to node 437.

[0107] The light emitting element 125 may be, for example, an organic electroluminescence element (also called an organic EL element). However, the light emitting element 125 is not limited to this, and An inorganic EL element made of an inorganic material may also be used.

[0108] A high power supply potential VDD is applied to one of the potential supply lines VL_a and VL_b. and the other is supplied with a low power supply potential VSS.

[0109] In the display device having the pixel circuit 134 of FIG. 4B, the driver circuit 132a or the driver circuit 132b sequentially selects the pixel circuits 134 in each row, and transistors 431 and A data signal is written to node 435 by turning on register 434 .

[0110] The pixel circuit 134 in which data is written to the node 435 is connected to the transistor 431 and the transistor The transistor 434 is turned off, which results in a holding state. A current flows between the source and drain electrodes of the transistor 232 according to the potential of the input data. The amount of current flowing through the light emitting element 125 is controlled, and the light emitting element 125 emits light with a brightness according to the amount of current flowing through the light emitting element 125. By sequentially performing the above for each row, an image can be displayed.

[0111] [An example of a pixel circuit for a liquid crystal display device] The pixel circuit 134 shown in FIG. 4C includes a liquid crystal element 432, a transistor 431, and a capacitor. and a child 233.

[0112] The potential of one of the pair of electrodes of the liquid crystal element 432 is set appropriately according to the specifications of the pixel circuit 134. The alignment state of the liquid crystal element 432 is set by data written to the node 436. Note that one of the pair of electrodes of the liquid crystal element 432 included in each of the plurality of pixel circuits 134 A common potential may be applied to the liquid crystal elements of each pixel circuit 134 of each row. A different potential may be applied to one of the pair of electrodes of the element 432 .

[0113] For example, the display device including the liquid crystal element 432 can be driven in TN mode, STN mode, or the like. Mode, VA mode, ASM (Axially Symmetric Aligned Mix cro-cell mode, OCB (Optically Compensated B refrigeration mode, FLC (Ferroelectric Liquid d Crystal) mode, AFLC (AntiFerroelectric Liq. Crystal) mode, MVA mode, PVA (Patterned Ver Artificial Alignment mode, IPS mode, FFS mode, or TBA (Transverse Bend Alignment) mode may also be used. In addition to the above-mentioned driving method, the display device can also be driven by an ECB (Electric Carrier Board) or the like. Ally Controlled Birefringence mode, PDLC (P Polymer Dispersed Liquid Crystal (PNLC) mode (Polymer Network Liquid Crystal) mode, guest However, the liquid crystal element and its driving method are not limited to these. A variety of materials can be used.

[0114] In addition, a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent The liquid crystal element 432 may be configured by the above. The liquid crystal that exhibits the blue phase has a response speed of 1 msec or more. The length is short and the alignment process is unnecessary because the film is optically isotropic. Therefore, the viewing angle dependency is small.

[0115] As the display element, a display element other than the light emitting element 125 and the liquid crystal element 432 is used. For example, electrophoretic elements, electronic inks, and electrophoretic display elements can be used as display elements. Wetting elements, MEMS (microelectromechanical systems), digital Digital Micromirror Device (DMD), Digital Microshutter (DMS), It is also possible to use MOD (Interference Modulation) elements. .

[0116] In the pixel circuit 134 in the mth row and the nth column, the source electrode and the drain electrode of the transistor 431 One of the electrodes is electrically connected to the signal line DL_n, and the other is electrically connected to the node 436. The gate electrode of the transistor 431 is electrically connected to the scanning line GL_m. Transistor 431 is turned on or off to transmit data to node 436. It has the function of controlling the writing of data signals.

[0117] One of the pair of electrodes of the capacitor 233 is connected to a wiring to which a specific potential is supplied (hereinafter, referred to as a capacitor line CL ) and the other is electrically connected to node 436. The other of the pair of electrodes of 32 is electrically connected to a node 436. The value of is set appropriately according to the specifications of the pixel circuit 134. The capacitance element 233 is connected to the node 43 6 functions as a storage capacitor for storing data written therein.

[0118] For example, in a display device having the pixel circuit 134 shown in FIG. 4C, each The pixel circuits 134 in the row are selected in sequence, and the transistors 431 are turned on to connect the node 436 Write the data signal.

[0119] In the pixel circuit 134 in which the data signal is written to the node 436, the transistor 431 is turned off. By doing this for each row in turn, the image can be displayed. .

[0120] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0121] (Fourth embodiment) In this embodiment, pixel values ​​applicable to the pixel 165 and pixel 175 of the display device 100 are A more specific example of the configuration of the element circuit 134 will be described with reference to FIGS.

[0122] [Configuration example of pixel 165] First, a configuration example of the pixel 165 will be described. 5(A) is an enlarged plan view of the light emitting element 12. 5 and the colored layer 266 are omitted. For the same reason, in FIG. 5(A) and 5(B), the pixel circuit 134 and the like are omitted. 10 is a cross-sectional view of the portion X3-X4 indicated by the dashed dotted line.

[0123] As described above, one pixel circuit 134 can drive one sub-pixel. Therefore, the pixel 165 is driven by at least three pixel circuits 134. The three pixel circuits 134 that drive the pixel 165 are designated as pixel circuit 134R, pixel circuit 13 4G, pixel circuit 134B. In pixel 165, the longitudinal direction of pixel circuit 134 The longitudinal direction of the light emitting element 125 and the colored layer 266 is approximately the same. The color layer 266R overlaps with the pixel circuit 134R, and the color layer 266G overlaps with the pixel circuit 134G. The colored layer 266B overlaps with the pixel circuit 134B. 4R, and the color layer 266G is driven by the pixel circuit 134G, and the color layer 266 B is driven by pixel circuit 134B.

[0124] The wiring 135 shown in FIGS. 5A and 6 corresponds to the scanning line GL_m. A part of 5 corresponds to the gate electrode 206, and the transistors 431 and 434 A part of the wiring 138 functions as a gate electrode. The other part functions as the gate electrode of the transistor 232. The wiring 135, the wiring 138, and the wiring 137 correspond to the potential supply line VL_a. The gate electrode 206 can be formed using the same material and method as the gate electrode 206 .

[0125] In addition, a gate insulating layer 207 is formed on the wiring 135, the wiring 138, and the wiring 137. The gate insulating layer 207 on the wiring 138 functions as a dielectric layer of the capacitor element 233. In addition, on the gate insulating layer 207 and the semiconductor layer 208, a wiring 136, a wiring 139, a wiring 151, wiring 152, and wiring 156 (see FIG. 5(A) and FIG. 6). 136 corresponds to the signal line DL_n. A part of the wiring 136 is connected to the transistor 431. The wiring 139 functions as one of the source electrode and the drain electrode of the gate insulating layer 2. 138 through an opening 153 formed in the wiring 139. The wiring 1 serves as the other of the source electrode and the drain electrode of the transistor 431. A part of the wiring 156 corresponds to the potential supply line V0. A part of the wiring 151 functions as either a source electrode or a drain electrode. The gate electrode 434 functions as the other of the source and drain electrodes.

[0126] The wiring 151 functions as the other electrode of the capacitor 233. The wiring 152 is a gate insulating layer 207 is electrically connected to the wiring 137 through an opening 154 formed in the wiring 15. 2 serves as one of the source and drain electrodes of the transistor 232. The wiring 151 serves as the other of the source electrode and the drain electrode of the transistor 232. The wiring 136, the wiring 139, the wiring 151, the wiring 152, and the wiring 156 are connected to the source The electrode 209a and the drain electrode 209b are formed using the same material and method. This can be done.

[0127] An insulating layer 210 is formed on the wiring 136, the wiring 139, the wiring 151, the wiring 152, and the wiring 156. An insulating layer 211 is formed on the insulating layer 210. The formed electrode 118 is formed through an opening 155 formed in the insulating layer 210 and the insulating layer 211. That is, the light emitting element 125 is electrically connected to the wiring 151. are actively connected.

[0128] The light emitted from the light emitting element 125 is converted by the colored layer 266R into light 235R. The other configurations are described in detail in other embodiments, and therefore will not be described here. do.

[0129] [Configuration example of pixel 175] Next, a configuration example of the pixel 175 will be described. FIG. 5C is an enlarged plan view of the pixel 175. For ease of understanding, FIG. 5(C) shows only the light emitting element 125 and the colored layer 266. and other descriptions are omitted.

[0130] The pixel 175 is formed by rotating the light emitting element 125 and the colored layer 266 of the pixel 165 by 90 degrees to form a V arrangement. In this case, the arrangement of the pixel circuits 134 can remain as the H arrangement. 5 shows a cross-sectional view of the portion X5-X6 indicated by the dashed line in FIG. 5(C).

[0131] In the display device 100 according to one embodiment of the present invention, the pixel circuit 134 is configured in the pixel 165 and the pixel 175. Therefore, there is no need to change the driving method between the area 160 and the area 170. If multiple driving circuits or driving methods are used within the display area 131, the manufacturing yield may decrease and the manufacturing process may become more complicated. This is likely to lead to an increase in manufacturing costs, and is one of the factors that reduces the productivity of display devices. According to this, a display device with good productivity and good display quality can be realized.

[0132] [Modification of pixel configuration] In addition, the colored layer 266, the light-shielding layer 264, the overcoat layer 268, etc. are not provided. In this case, instead of the light emitting element 125 that emits white light, A light emitting element 125R that emits red light, a light emitting element 125G that emits green light, a light emitting element 125G that emits blue light By using the optical element 125B, a color display can be performed. An example of a configuration that does not use the above is shown in FIG.

[0133] The light emitting element 125R, the light emitting element 125G, and the light emitting element 125B each include an EL layer 117R. , EL layer 117R, EL layer 117G, and EL layer 117B. 117B, red light 235R, green light 235G, blue light 235B, etc. In this way, the color layer 266 and the like are not used. Therefore, color purity is improved and the amount of light loss can be reduced.

[0134] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0135] (Embodiment 5) In this embodiment, an example of a manufacturing method of the display device 100 will be described with reference to FIGS. 9 to 14 show the area X1-X2 indicated by the dashed line in FIG. It corresponds to a cross section.

[0136] [Forming a release layer] First, a release layer 113 is formed on an element formation substrate 101 (see FIG. 9(A)). The substrate 101 may be a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, A metal substrate or the like can be used. A plastic substrate having such a structure may also be used.

[0137] The glass substrate may be made of, for example, aluminosilicate glass or aluminoborosilicate glass. Glass materials such as barium borosilicate glass are used. By adding more BaO, a more practical heat-resistant glass can be obtained. Russ etc. can be used.

[0138] The release layer 113 may be made of tungsten, molybdenum, titanium, tantalum, niobium, nickel, or copper. Baltic, Zirconium, Ruthenium, Rhodium, Palladium, Osmium, Iridium, An element selected from silicon, an alloy material containing the element, or a compound material containing the element In addition, these materials can be formed as a single layer or a stacked layer. The crystalline structure of the peeling layer 113 may be amorphous, microcrystalline, or polycrystalline. The peeling layer 113 may be made of aluminum oxide, gallium oxide, zinc oxide, titanium dioxide, or the like. Indium oxide, indium tin oxide, indium zinc oxide, or InGaZn It can also be formed using a metal oxide such as O(IGZO).

[0139] The peeling layer 113 can be formed by a sputtering method, a CVD method, a coating method, a printing method, or the like. The coating method includes a spin coating method, a droplet ejection method, and a dispense method.

[0140] When the peeling layer 113 is formed as a single layer, it is preferably made of tungsten, molybdenum, or a combination of tungsten and molybdenum. It is preferable to use an alloy material containing molybdenum. Alternatively, the peeling layer 113 may be formed as a single layer. In this case, tungsten oxide or oxynitride, molybdenum oxide or oxide Nitrides, or oxides or oxynitrides of alloys containing tungsten and molybdenum It is preferable that

[0141] The peeling layer 113 may be a layer containing tungsten and a layer containing an oxide of tungsten. When a stacked structure of layers containing tungsten is formed, an oxide insulating layer is formed in contact with the layer containing tungsten. As a result, tungsten oxide is formed at the interface between the tungsten-containing layer and the oxide insulating layer. Alternatively, the surface of the layer containing tungsten may be subjected to a thermal oxidation treatment, an oxygen plating treatment, or the like. The material is treated with a strong oxidizing solution such as ozonated water or ozone water to remove tungsten oxides. A layer containing the metal may be formed.

[0142] In this embodiment mode, tungsten is formed as the peeling layer 113 by a sputtering method. .

[0143] [Forming an insulating layer] Next, an insulating layer 205 is formed as a base layer on the peeling layer 113 (see FIG. 9(A)). The edge layer 205 may be made of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, or silicon oxide. aluminum nitride, aluminum oxynitride, aluminum nitride oxide, etc., as a single layer or It is preferable to form the insulating layer 205 in a multi-layer structure. For example, the insulating layer 205 may be formed of silicon oxide and silicon nitride. It may be a two-layer structure made by laminating the materials, or a five-layer structure made by combining the above materials. The layer 205 is formed by using a sputtering method, a CVD method, a thermal oxidation method, a coating method, a printing method, or the like. It is possible to do this.

[0144] The thickness of the insulating layer 205 is 30 nm or more and 500 nm or less, preferably 50 nm or more and 400 nm or less. m or less.

[0145] The insulating layer 205 prevents the diffusion of impurity elements from the element formation substrate 101, the peeling layer 113, etc. Furthermore, even after the element formation substrate 101 is replaced with the substrate 111, Preventing the diffusion of impurity elements from the substrate 111 or the adhesive layer 112 into the light emitting element 125, or In this embodiment, the insulating layer 205 is formed by plasma CVD. A laminated film of silicon oxynitride with a thickness of 200 nm and silicon nitride oxide with a thickness of 50 nm is used. .

[0146] [Forming the gate electrode] Next, a gate electrode 206 is formed on the insulating layer 205 (see FIG. 9(A)). Gate electrode 206 is made of aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten. or an alloy containing the above metal elements, or It can be formed by using a combination of alloys, etc. Also, manganese, zirconium, etc. The gate electrode 206 may be formed of one or more metal elements selected from the above. The film may have a single layer structure or a laminated structure of two or more layers. a single-layer structure of aluminum film, a two-layer structure of aluminum film laminated on titanium film, a titanium nitride film laminated on titanium film, Two-layer structure with a titanium film laminated on top, two-layer structure with a tungsten film laminated on top of a titanium nitride film, nitride Two-layer structure in which a tungsten film is laminated on a tantalum film or a tungsten nitride film, titanium film A two-layer structure with a copper film laminated on top, a titanium film, and an aluminum film laminated on top of the titanium film. There are also three-layer structures in which a titanium film is formed on top of the aluminum. One selected from tantalum, tungsten, molybdenum, chromium, neodymium, and scandium Alternatively, an alloy film made by combining a plurality of layers, or a nitride film may be used.

[0147] The gate electrode 206 is made of indium tin oxide, indium oxide containing tungsten oxide. oxide, indium zinc oxide with tungsten oxide, indium oxide with titanium oxide Indium tin oxide, indium zinc oxide, silicon oxide containing titanium oxide A light-transmitting conductive material such as indium tin oxide can also be used. A laminated structure of the above-mentioned light-transmitting conductive material and the above-mentioned metal element may also be used.

[0148] First, a metal oxide film is formed on the insulating layer 205 by plasma CVD, LPCVD, or MOCVD (Met Organic Chemical Vapor Deposition (OCCVD) method, etc. The gate electrode 206 is formed by a CVD method, an ALD method, a sputtering method, a vapor deposition method, or the like. A conductive film is laminated on the conductive film, and a resist mask is formed on the conductive film by a photolithography process. When the conductive film that becomes the gate electrode 206 is formed by the MOCVD method, damage to the surface on which it is formed is prevented. Next, a resist mask is used to form a gate electrode 206. A part of the conductive film is etched to form the gate electrode 206. At this time, other wiring and The electrodes can also be formed at the same time.

[0149] The etching of the conductive film may be performed by dry etching or wet etching, or both. When dry etching is used, the resist mask may be If an ashing process is performed before removing the resist mask, it becomes easier to remove the resist mask using a stripping solution. It can be said that:

[0150] The gate electrode 206 may be formed by electrolytic plating, printing, inkjet printing, or the like instead of the above-mentioned method. It may also be formed by a jet method or the like.

[0151] The thickness of the gate electrode 206 is 5 nm or more and 500 nm or less, and more preferably 10 nm or more and 300 nm or less. 00 nm or less, and more preferably 10 nm or more and 200 nm or less.

[0152] Furthermore, by forming the gate electrode 206 using a conductive material having a light-shielding property, the gate electrode 206 can be protected from external light. This makes it difficult for the light to reach the semiconductor layer 208 from the gate electrode 206 side. As a result, fluctuations in the electrical characteristics of the transistor due to light irradiation can be suppressed.

[0153] [Forming a gate insulating layer] Next, the gate insulating layer 207 is formed (see FIG. 9(A)). For example, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide aluminum, a mixture of aluminum oxide and silicon oxide, hafnium oxide, gallium oxide or A Ga-Zn-based metal oxide or the like may be used, and the layer may be a laminate or a single layer.

[0154] The gate insulating layer 207 is made of hafnium silicate (HfSiO x ), nitrogen added Hafnium silicate (HfSi x O y N z ), nitrogen-doped hafnium aluminium Laminate (HfAl x O y N z ), hafnium oxide, yttrium oxide, etc. The use of high-k materials can reduce the gate leakage of transistors. A laminate of carbon and hafnium oxide may also be used.

[0155] The thickness of the gate insulating layer 207 is 5 nm or more and 400 nm or less, and more preferably 10 nm or more. It is preferable to set the thickness to 300 nm or less, and more preferably to set the thickness to 50 nm or more and 250 nm or less.

[0156] The gate insulating layer 207 can be formed by a sputtering method, a CVD method, a vapor deposition method, or the like. .

[0157] The gate insulating layer 207 may be a silicon oxide film, a silicon oxynitride film, or a silicon nitride oxide film. When forming a silicon film, a deposition gas containing silicon and an oxidizing gas are used as source gases. Representative examples of silicon-containing deposition gases include silane, disilane, Examples of oxidizing gases include trisilane, fluorinated silane, etc. Examples of oxidizing gases include oxygen, ozone, and nitrous oxide. , nitrogen dioxide, etc.

[0158] The gate insulating layer 207 is made of a nitride insulating layer and an oxide insulating layer in this order from the gate electrode 206 side. By providing a nitride insulating layer on the gate electrode 206 side, From the gate electrode 206 side, hydrogen, nitrogen, alkali metal, alkaline earth metal, etc. It is possible to prevent the migration of nitrogen, alkali metals, or Alkaline earth metals and the like function as impurity elements in semiconductors. It functions as an impurity element of the conductor. Therefore, the term "impurity" in this specification includes hydrogen, This includes nitrogen, alkali metals, alkaline earth metals, and the like.

[0159] When an oxide semiconductor is used as the semiconductor layer 208, an oxide insulating layer is formed on the semiconductor layer 208 side. By providing the edge layer, the defect level at the interface between the gate insulating layer 207 and the semiconductor layer 208 is reduced. As a result, a transistor with little deterioration in electrical characteristics can be obtained. When an oxide semiconductor is used for the semiconductor layer 208, When an oxide insulating layer containing more oxygen than the oxygen that satisfies the stoichiometric composition is used, In addition, the defect level density at the interface between the gate insulating layer 207 and the semiconductor layer 208 can be further reduced. This is preferable because it is possible to

[0160] When the gate insulating layer 207 is a stack of a nitride insulating layer and an oxide insulating layer as described above, In this case, the nitride insulating layer is preferably thicker than the oxide insulating layer.

[0161] Since the nitride insulating layer has a larger dielectric constant than the oxide insulating layer, the thickness of the gate insulating layer 207 is Even if the thickness is increased, the electric field generated in the gate electrode 206 can be efficiently transmitted to the semiconductor layer 208. In addition, by making the entire gate insulating layer 207 thick, the dielectric strength of the gate insulating layer 207 can be increased. Therefore, the reliability of the semiconductor device can be improved.

[0162] The gate insulating layer 207 is made of a first nitride insulating layer having few defects and a second nitride insulating layer having hydrogen blocking properties. A second nitride insulating layer having a high resistance and an oxide insulating layer are stacked in this order from the gate electrode 206 side. The gate insulating layer 207 can have a laminated structure in which a first nitride insulating layer having few defects is formed. By using the layer, the breakdown voltage of the gate insulating layer 207 can be improved. By providing a second nitride insulating layer having high hydrogen blocking properties on the gate insulating layer 207, The hydrogen contained in the gate electrode 206 and the first nitride insulating layer moves to the semiconductor layer 208. This can be prevented.

[0163] An example of a method for forming the first nitride insulating layer and the second nitride insulating layer will be described below. By using a plasma CVD method with a mixture of orthogonal, nitrogen, and ammonia gas as the source gas, Then, a silicon nitride film with few defects is formed as the first nitride insulating layer. By switching to a mixture of silane and nitrogen, the hydrogen concentration is low and hydrogen is blocked. A silicon nitride film capable of being formed by this method is deposited as the second nitride insulating layer. By this method, a nitride insulating layer having few defects and a hydrogen blocking property is stacked. A gate insulating layer 207 can also be formed.

[0164] The gate insulating layer 207 is made up of a third nitride insulating layer having high impurity blocking properties and a defect-resistant layer. A first nitride insulating layer with few defects, a second nitride insulating layer with high hydrogen blocking properties, and an oxide The gate electrode 206 may have a laminated structure in which a nitride insulating layer and a nitride insulating layer are laminated in this order from the gate electrode 206 side. The gate insulating layer 207 is provided with a third nitride insulating layer having high impurity blocking properties. Then, hydrogen, nitrogen, alkali metal, alkaline earth metal, etc. are introduced from the gate electrode 206 into the semiconductor. This can prevent the material from migrating to the body layer 208.

[0165] An example of a method for forming the first to third nitride insulating layers will be described below. The plasma CVD method was performed using a mixture of silane, nitrogen, and ammonia as the source gas. A silicon nitride film having high impurity blocking properties is formed as the third nitride insulating layer. Next, by increasing the flow rate of ammonia, a silicon nitride film with fewer defects was obtained. Next, the source gas is switched to a mixed gas of silane and nitrogen. The second silicon nitride film has a low hydrogen concentration and is capable of blocking hydrogen. By using this method, the nitride insulating layer can be formed with few defects and no impurities. The gate insulating layer 207 is formed by stacking a nitride insulating layer having blocking properties. can.

[0166] In addition, when a gallium oxide film is formed as the gate insulating layer 207, the MOCVD method is used. It can be formed.

[0167] The semiconductor layer 208 in which the channel of the transistor is formed and the insulating layer containing hafnium oxide are The insulating layer is laminated on the insulating layer containing hafnium oxide, and electrons are injected into the insulating layer containing hafnium oxide. This allows the threshold voltage of the transistor to be changed.

[0168] [Forming a semiconductor layer] The semiconductor layer 208 may be formed using an amorphous semiconductor, a microcrystalline semiconductor, a polycrystalline semiconductor, or the like. For example, amorphous silicon or microcrystalline germanium can be used. In addition, compound semiconductors such as silicon carbide, gallium arsenide, oxide semiconductors, and nitride semiconductors, The semiconductor layer 208 can be formed by a method such as plasma CVD or LPCVD. In addition to CVD methods such as MOCVD, ALD, sputtering, coating, The semiconductor layer 208 can be formed by a printing method or the like. This can reduce damage to the surface.

[0169] The thickness of the semiconductor layer 208 is 3 nm or more and 200 nm or less, preferably 3 nm or more and 100 nm or less. More preferably, the thickness is 3 nm or more and 50 nm or less. As the oxide semiconductor film 08, a 30-nm-thick oxide semiconductor film is formed by a sputtering method.

[0170] Next, a resist mask is formed over the oxide semiconductor film, and a conductive film is formed using the resist mask. The semiconductor layer 208 is formed by selectively etching a part of the resist mask. The formation can be carried out by appropriately using a photolithography method, a printing method, an inkjet method, or the like. If the resist mask is formed by the inkjet method, a photomask is not used. , and manufacturing costs can be reduced.

[0171] The oxide semiconductor film may be etched by either dry etching or wet etching. After the etching of the oxide semiconductor film is completed, the resist mask is removed. (See Figure 9(B)).

[0172] [Forming source electrodes, drain electrodes, etc.] Next, the source electrode 209a, the drain electrode 209b, the wiring 219, and the terminal electrode 216 First, a conductive film is formed on the gate insulating layer 207 and the semiconductor layer 208 (see FIG. 9(C)). The conductive film is formed by a method such as plasma CVD, LPCVD, or MOCVD. It can be formed by CVD, ALD, sputtering, vapor deposition, coating, printing, etc. When a conductive film is formed by MOCVD, damage to the surface on which it is formed is reduced. It is possible.

[0173] Conductive films include aluminum, titanium, chromium, nickel, copper, yttrium, and zirconium. elemental metals consisting of tungsten, molybdenum, silver, tantalum, or tungsten, or The alloy containing silicon as the main component can be used as a single layer structure or a laminated structure. Single layer structure of aluminum film containing titanium, and double layer structure of aluminum film laminated on titanium film , a two-layer structure in which an aluminum film is laminated on a tungsten film, copper-magnesium-aluminum Two-layer structure with copper film laminated on aluminum alloy film, two-layer structure with copper film laminated on titanium film, Two-layer structure with copper film laminated on stainless film, titanium film or titanium nitride film and titanium film or An aluminum film or copper film is laminated on the titanium nitride film, and a titanium film is further laminated on the aluminum film or copper film. a three-layer structure forming a film or titanium nitride film, a molybdenum film or molybdenum nitride film, and an aluminum film or a copper film is laminated on the molybdenum film or the molybdenum nitride film; A three-layer structure in which a molybdenum film or molybdenum nitride film is formed on top of the tungsten film. There is also a three-layer structure in which a copper film is laminated on a film, and a tungsten film is further formed on that.

[0174] In addition, indium tin oxide, zinc oxide, indium oxide containing tungsten oxide, acid Indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, Indium tin oxide containing titanium, indium zinc oxide, indium with silicon oxide Conductive materials containing oxygen, such as aluminum tin oxide, and those containing nitrogen, such as titanium nitride and tantalum nitride. A conductive material may be used. In addition, a material containing the above-mentioned metal element and a conductive material containing oxygen may be used. It is also possible to use a laminated structure in which the above-mentioned material containing a metal element and It is also possible to use a laminated structure in which a conductive material containing nitrogen is combined. A product of a combination of a material containing an element, a conductive material containing oxygen, and a conductive material containing nitrogen It can also be a layered structure.

[0175] The thickness of the conductive film is preferably 5 nm or more and 500 nm or less, more preferably 10 nm or more and 300 nm or less. nm or less, and more preferably 10 nm or more and 200 nm or less. A tungsten film having a thickness of 300 nm is formed.

[0176] Next, a portion of the conductive film is selectively etched using a resist mask to form a source electrode 20 9a, the drain electrode 209b, the wiring 219, and the terminal electrode 216 (formed in the same layer as this The resist mask is formed by photolithography. The resist mask can be formed by a suitable method such as a drawing method, a printing method, or an ink-jet method. When the inkjet method is used to form the film, no photomask is required, which reduces manufacturing costs. do.

[0177] The etching of the conductive film may be performed by dry etching or wet etching, or both. It should be noted that the etching step removes a part of the exposed semiconductor layer 208. This may be the case.

[0178] After etching of the conductive film is completed, the resist mask is removed (see FIG. 9(C)).

[0179] [Forming an insulating layer] Next, the source electrode 209a, the drain electrode 209b, the wiring 219, and the terminal electrode 216 An insulating layer 210 is formed on the insulating layer 205 (see FIG. 9(D)). The substrate can be formed using a variety of materials and methods.

[0180] In addition, when an oxide semiconductor is used for the semiconductor layer 208, at least the semiconductor of the insulating layer 210 It is preferable to use an insulating layer containing oxygen in the region in contact with the layer 208. For example, the insulating layer 2 When the insulating film 10 is a multi-layer laminate, at least the layer in contact with the semiconductor layer 208 is made of silicon oxide. It is sufficient to form it.

[0181] [Formation of openings] Next, a portion of the insulating layer 210 is selectively etched using a resist mask to form an opening 12. 8 is formed (see FIG. 9(D)). At this time, other openings (not shown) are also formed at the same time. The resist mask is formed by photolithography, printing, inkjet printing, etc. If the resist mask is formed by the inkjet method, it is possible to use a photomask. Since no external wiring is used, manufacturing costs can be reduced.

[0182] The etching of the insulating layer 210 may be performed by dry etching or wet etching. Both may be used.

[0183] By forming the opening 128, the drain electrode 209b and a part of the terminal electrode 216 are exposed. After the opening 128 is formed, the resist mask is removed.

[0184] [Forming a planarizing film] Next, the insulating layer 211 is formed on the insulating layer 210 (see FIG. 10(A)). can be formed using the same material and method as the insulating layer 205.

[0185] In addition, in order to reduce the surface irregularities on the surface on which the light emitting element 125 is formed, the insulating layer 211 is subjected to a planarization treatment. The planarization process is not particularly limited, but may be a polishing process (for example, a chemical mechanical polishing process). Polishing method (Chemical Mechanical Polishing: CMP), This can be done by dry etching or etching.

[0186] In addition, by forming the insulating layer 211 using an insulating material having a planarizing function, the polishing process can be performed. The insulating material having a planarizing function may be, for example, a polyimide resin, Organic materials such as acrylic resins can be used. In addition to the above organic materials, low dielectric constant materials can also be used. In addition, insulating layers formed from these materials can be used. The insulating layer 211 may be formed by stacking a plurality of layers.

[0187] Also, a part of the insulating layer 211 in the region overlapping the opening 128 is removed to form an opening 129. At this time, other openings (not shown) are also formed at the same time. The insulating layer 211 in the area where the opening 129 is to be formed is removed by photolithography on the insulating layer 211. A resist mask is formed by a lithography process, and the insulating layer 211 is covered with the resist mask. By forming the opening 129, The surface of the drain electrode 209b is exposed.

[0188] In addition, by using a photosensitive material for the insulating layer 211, it is possible to use a resist mask. In this embodiment, the opening 129 can be formed without using a photosensitive polyimide resin. This is used to form the insulating layer 211 and the opening 129 .

[0189] [Forming the anode] Next, the electrode 115 is formed over the insulating layer 211 (see FIG. 10B). It is formed using a conductive material that efficiently reflects the light emitted by the EL layer 117 that will be formed later. It is preferable that the electrode 115 is not limited to a single layer, but may have a multi-layer structure. For example, when the electrode 115 is used as an anode, the layer in contact with the EL layer 117 is made of indium stannate. The layer is a transparent layer having a work function larger than that of the EL layer 117 such as an oxide. A highly reflective layer (such as aluminum, an alloy containing aluminum, or silver) may be provided. stomach.

[0190] In this embodiment, a display device having a top emission structure is exemplified. Bottom emission structure (bottom injection structure) or dual emission structure (double injection structure) ) display device.

[0191] The display device 100 may be configured as a bottom emission structure (bottom emission structure) or a dual emission structure. In the case of a display device having a dual emission structure, the electrode 115 is made of a conductive material having light transmitting properties. Just use the materials.

[0192] The electrode 115 is formed by forming a conductive film to be the electrode 115 on the insulating layer 211 and then forming a resist on the conductive film. A resist mask is formed on the conductive film, and the region not covered with the resist mask is etched. The conductive film can be formed by etching using a dry etching method or a wet etching method. The resist mask is then formed on the substrate. This can be done by photolithography, printing, inkjet printing, etc. When a resist mask is formed by the inkjet method, a photomask is not used, so the manufacturing After the electrode 115 is formed, the resist mask is removed.

[0193] [Forming a partition] Next, the partition walls 114 are formed (see FIG. 10(C)). The partition walls 114 are formed to separate the light emitting layers of adjacent pixels. This is provided to prevent the optical element 125 from accidentally shorting out electrically and emitting light erroneously. When a metal mask is used to form the EL layer 117 described later, the metal mask is in contact with the electrode 115. The partition wall 114 is made of epoxy resin, acrylic resin, imide, or the like. The partition wall can be formed of an organic resin material such as a resin, or an inorganic material such as silicon oxide. 114 is designed so that its side wall is an inclined surface formed with a tapered or continuous curvature. By forming the side wall of the partition wall 114 in such a shape, it is possible to prevent the side wall from being damaged. This can improve the coverage of the EL layer 117 and the electrodes 118 that are to be formed.

[0194] [Forming the EL layer] The configuration of the EL layer 117 will be described in the seventh embodiment.

[0195] [Forming the cathode] In this embodiment, the electrode 118 is used as a cathode, and therefore the electrode 118 is connected to the EL layer 11 (described later). It is preferable to form the electrode 7 using a material with a small work function that can inject electrons. Instead of a metal with a low work function, an alkali metal or alkaline earth metal with a low work function is used. A layer of metal formed several nanometers is formed as a buffer layer, and then a metal material such as aluminum is formed on top of it. The insulating film is formed using a conductive oxide material such as indium tin oxide or a semiconductor material. The buffer layer may be made of an oxide, halide, or magnesium of an alkaline earth metal. An alloy such as neodymium-silver can also be used.

[0196] In addition, when light emitted from the EL layer 117 is extracted through the electrode 118, the electrode 118 is The electrode 115, the EL layer 117, and the electrode 118 preferably have a property of transmitting visible light. As a result, the light emitting element 125 is formed (see FIG. 10(D)).

[0197] [Forming the opposing element formation substrate] The light-shielding layer 264, the coloring layer 266, the overcoat layer 268, the insulating layer 145, the release layer 1 The element forming substrate 141 on which the element forming layer 43 is formed is placed on the element forming substrate 101 via the adhesive layer 120. (See FIG. 11(A)). The element formation substrate 141 is arranged opposite to the element formation substrate 101. Since they are formed to oppose each other, the element forming substrate 141 is sometimes called the "opposing element forming substrate." The configuration of the element forming substrate 141 (opposing element forming substrate) will be explained later.

[0198] The adhesive layer 120 is formed in contact with the electrode 118. The element formation substrate 141 has the adhesive layer 120. The adhesive layer 120 may be a photo-curing adhesive, a reaction-curing adhesive, or a heat-curing adhesive. For example, epoxy resin, acrylic resin, or anaerobic adhesive can be used. In the case of a top emission structure, adhesive layer 1 20 contains desiccants (such as zeolite) whose size is less than the wavelength of light, and fillers with a high refractive index (such as acid When titanium dioxide, zirconium, etc. are mixed, the light extraction efficiency of the EL layer 117 increases. This is preferable because it improves the

[0199] [Peeling the element formation substrate from the insulating layer] Next, the element forming substrate 101 that is in contact with the insulating layer 205 via the release layer 113 is removed from the insulating layer 205. The peeling method involves applying mechanical force (human force). (e.g. peeling by hand or with a jig, separating by rotating a roller, ultrasonic, etc.) For example, the peeling layer 113 may be cut with a sharp blade or by laser light irradiation. Make a cut and inject water into the cut. Or spray water onto the cut. Water penetrates between the release layer 113 and the insulating layer 205 due to the capillary phenomenon, and the element forming substrate The plate 101 can be easily peeled off from the insulating layer 205 .

[0200] [Bonding the substrates together] Next, the substrate 111 is bonded to the insulating layer 205 via the adhesive layer 112 (FIG. 12(A), See FIG. 12(B). The adhesive layer 112 can be made of the same material as the adhesive layer 120. do.

[0201] [Peeling the opposing element formation substrate from the insulating layer] Next, the element forming substrate 141 that is in contact with the insulating layer 145 via the release layer 143 is removed from the insulating layer 145. The element formation substrate 141 is peeled off from the above-mentioned element formation substrate (see FIG. 13(A)). This can be done in the same manner as in peeling off the substrate 101.

[0202] [Bonding the substrates together] Next, the substrate 121 is bonded to the insulating layer 145 via the adhesive layer 142 (see FIG. 13(B)). The adhesive layer 142 can be made of the same material as the adhesive layer 120.

[0203] [Forming an opening] Next, the substrate 121, the adhesive layer 142, and the like in the area overlapping the terminal electrode 216 and the opening 128 are The insulating layer 145, the coloring layer 266, the overcoat layer 268, and the adhesive layer 120 are removed. 14(A) , an opening 122 is formed. A portion of the surface of the terminal electrode 216 is exposed.

[0204] [Forming external electrodes] Next, an anisotropic conductive connection layer 123 is formed in the opening 122, and a surface An external electrode 124 is formed to input power and signals to the display device 100 (see FIG. 14(B)). The terminal electrode 216 is electrically connected to the external electrode 124 via the anisotropic conductive connection layer 123. The external electrode 124 is, for example, an FPC (Flexible Printed Circuit). ted circuit) can be used.

[0205] The anisotropic conductive connection layer 123 may be made of various anisotropic conductive films (ACFs). Conductive Film) and Anisotropic Conductive Paste (ACP) It can be formed using a tungsten carbide (Tropical Conductive Paste) or the like.

[0206] The anisotropic conductive connection layer 123 is made of a thermosetting resin or a thermosetting and photosetting resin containing conductive particles. The anisotropic conductive connection layer is made by hardening a paste or sheet-like material that has been mixed. The anisotropic conductive connection layer 123 becomes a material that exhibits anisotropic conductivity when irradiated with light or subjected to thermocompression bonding. The conductive particles used in 123 are, for example, spherical organic resin particles coated with Au, Ni, Co, etc. Particles coated with a thin film of metal can be used.

[0207] [Structures formed on the opposing element formation substrate] Next, regarding the structures such as the light-shielding layer 264 formed on the element formation substrate 141, the following is performed using FIG. and explain.

[0208] First, an element formation substrate 141 is prepared. Next, a release layer 143 and an insulating layer 144 are formed on the element formation substrate 141. The peeling layer 143 is made of the same material as the peeling layer 113 (see FIG. 15(A)). The insulating layer 145 can be formed using the same material and method as the insulating layer 205. It can be formed by the materials and methods.

[0209] Next, a light-shielding layer 264 is formed on the insulating layer 145 (see FIG. 15(B)). A layer 266 is formed (see FIG. 15(C)).

[0210] The light-shielding layer 264 and the colored layer 266 can be formed using various materials by a printing method, an ink-jet method, They are formed at desired positions using photolithography.

[0211] Next, an overcoat layer 268 is formed on the light-shielding layer 264 and the colored layer 266 (FIG. 15 (See (D)).

[0212] The overcoat layer 268 may be made of, for example, acrylic resin, epoxy resin, or polyimide resin. By forming the overcoat layer 268, an organic insulating layer such as For example, it is possible to prevent impurities contained in the colored layer 266 from diffusing toward the light emitting element 125. However, the overcoat layer 268 does not necessarily have to be provided.

[0213] Alternatively, a light-transmitting conductive film may be formed as the overcoat layer 268. By providing a light-transmitting conductive film as the coating layer 268, the light emitted from the light-emitting element 125 can be The irradiated light 235 can be transmitted through the irradiated light 235 while preventing the transmission of ionized impurities.

[0214] The light-transmitting conductive film is made of, for example, indium oxide or indium tin oxide (ITO). Indium Tin Oxide, Indium Zinc Oxide, Zinc Oxide, Gallium Doped In addition to graphene, a light-transmitting material such as zinc oxide can be used. Alternatively, a metal film formed thin enough to be thin enough to be usable may be used.

[0215] Through the above steps, structures such as the light-shielding layer 264 can be formed on the element formation substrate 141.

[0216] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0217] (Sixth embodiment) The configuration of the display device 100 having a top emission structure is modified to have a bottom emission structure. A display device 150 can be fabricated.

[0218] 16 shows an example of a cross-sectional configuration of a display device 150 having a bottom emission structure. 1A is a perspective view of the display device 100. In FIG. 1A, a portion X1-X2 is shown by a dashed line. The display device 150 of the bottom emission structure has a light-shielding layer 264 The positions of the color layer 266 and the overcoat layer 268 are different from those of the display device 100. Specifically, the display device 150 includes a light-shielding layer 264, a colored layer 266, and an overcoat. A conductive layer 268 is formed on the substrate 111 .

[0219] In the display device 150, the insulating layer 145 is formed directly on the substrate 121, and the adhesive layer 120 is That is, the insulating layer 145 can be attached to the substrate 111 via the element forming substrate 1. Since there is no need to transfer the element formation substrate 141, the peeling layer 143, and the adhesive layer 142, Therefore, the productivity and yield of the display device can be improved. The other components of the display device 150 can be formed in the same manner as the display device 100. do.

[0220] In addition, the display device 150 having the bottom emission structure has the electrode 115 made of a light-transmitting conductive material. The electrode 118 is formed using a conductive material that efficiently reflects the light emitted by the EL layer 117. It is formed using an electrically conductive material.

[0221] In addition, the wiring 138 and the wiring 151 used in the display device 150 of the bottom emission structure (not shown in FIG. 16) is preferably made of a light-transmitting material.

[0222] The display device 150 transmits light 235 emitted from the EL layer 117 to the substrate via the colored layer 266. It can be launched from the 111 side.

[0223] In the display device 150, the transistors constituting the driving circuit 133 are The transistor 272 is similar to the transistor 252. However, the electrode 263 can be formed in the region on the insulating layer 210 that overlaps with the semiconductor layer 208. The electrode 263 is formed by the same material and method as the gate electrode 206. It can be achieved.

[0224] The electrode 263 can function as a gate electrode. When either the electrode 261 or the electrode 262 is simply referred to as a "gate electrode," the other is referred to as a "back gate." In addition, either the gate electrode 206 or the electrode 226 may be referred to as One may be called the "first gate electrode" and the other may be called the "second gate electrode."

[0225] In general, the back gate electrode is formed of a conductive film, and the gate electrode and the back gate electrode form a semiconductor. The back gate electrode is disposed so as to sandwich the channel forming region of the layer. The back gate electrode can be made to function in the same manner as the gate electrode. The potential of the back gate electrode may be changed, or may be set to the GND potential or any other potential. By changing the voltage, the threshold voltage of the transistor can be changed.

[0226] In addition, since the gate electrode and back gate electrode are made of a conductive film, they can be easily The function of preventing the electric field generated from acting on the semiconductor layer where the channel is formed (especially static electricity It also has electrostatic shielding function against

[0227] In addition, when light is incident from the back gate electrode side, the back gate electrode is By forming the semiconductor layer from a conductive film, light is prevented from entering the semiconductor layer from the back gate electrode side. This prevents light degradation of the semiconductor layer and shifts the threshold voltage of the transistor. This can prevent deterioration of electrical characteristics such as

[0228] By providing the gate electrode 206 and the electrode 263 with the semiconductor layer 208 sandwiched between them, By setting the electrode 206 and the electrode 263 at the same potential, carriers are The area in which the carriers flow becomes larger in the film thickness direction, and the amount of carrier movement increases. As a result, the on-state current of the transistor increases and the field-effect mobility increases.

[0229] The gate electrode 206 and the electrode 263 each have the function of blocking an external electric field. Therefore, the charges present in the layer below the gate electrode 206 and the layer above the electrode 263 are This does not affect the semiconductor layer 208. As a result, stress tests (e.g., applying a negative voltage to the gate) Gate Bias-Temperature (GBT) stress test and gate bias test The change in threshold voltage before and after the GBT stress test is small. Also, it is necessary to suppress the fluctuation of the on-current rise voltage at different drain voltages. This can be done.

[0230] The BT stress test is a type of accelerated test that measures the transients that occur during long-term use. It is possible to evaluate the change in the characteristics of the BT string (i.e., the change over time) in a short time. The amount of change in the threshold voltage of a transistor before and after the load test is an important factor for examining reliability. The smaller the threshold voltage fluctuation before and after the BT stress test, the better the It can be said that this is a highly reliable transistor.

[0231] Also, the gate electrode 206 and the electrode 263 are included, and the gate electrode 206 and the electrode 26 By making the potentials of the transistors 3 the same, the amount of variation in the threshold voltage is reduced. At the same time, the variations in electrical characteristics of the transistors are reduced.

[0232] The transistor 232 formed in the display region 131 is provided with a back gate electrode. Good too.

[0233] Note that a touch sensor may be provided in the same manner as in Figures 21(A) and 21(B). An example of this case is shown in FIG. 22(A) and FIG. 22(B).

[0234] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0235] (Embodiment 7) In this embodiment, a structural example of a light-emitting element that can be used as the light-emitting element 125 will be described. Note that the EL layer 320 in this embodiment may be the same as the EL layer 117 in other embodiments. is equivalent to

[0236] <Configuration of light-emitting element> The light-emitting element 330 shown in FIG. 17(A) has an EL element between a pair of electrodes (electrode 318 and electrode 322). In the following description of this embodiment, the layer 320 is taken as an example. Electrode 318 is used as an anode and electrode 322 is used as a cathode.

[0237] The EL layer 320 may be formed to include at least a light-emitting layer. The functional layer other than the light-emitting layer may be a layered structure including a functional layer having a high hole injection property. materials with high hole transporting properties, materials with high electron transporting properties, materials with high electron injecting properties, bipolar A layer containing a material having high electron and hole transport properties can be used. In practice, functional layers such as a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer are appropriately combined. It can be used as such.

[0238] The light emitting element 330 shown in FIG. 17A emits light in response to a potential difference generated between the electrode 318 and the electrode 322. This allows current to flow, and holes and electrons recombine in the EL layer 320, causing light to be emitted. In other words, the EL layer 320 is configured to have a light-emitting region.

[0239] In one embodiment of the present invention, light emitted from the light-emitting element 330 is incident on the electrode 318 or the electrode 322. Therefore, either the electrode 318 or the electrode 322 is transparent. It is made of a material that has optical properties.

[0240] The EL layer 320 is connected to the electrode 318 and the electrode 331 as in the light-emitting element 331 shown in FIG. 17(B). 22 may be laminated in multiple layers. When this is the case, it is preferable to provide charge generation layers 320a between the m-th (m is a natural number satisfying 1 ≦ m < n) EL layer 320 and the (m + 1) -th EL layer 320, respectively.

[0241] The charge generation layer 320a can be formed by appropriately combining a composite material of an organic compound and a metal oxide, a metal oxide, a composite material of an organic compound and an alkali metal, an alkaline earth metal, or a compound thereof, in addition to these. As the composite material of an organic compound and a metal oxide, for example, it contains a composite material of an organic compound and a metal oxide such as vanadium oxide, molybdenum oxide, or tungsten oxide. As the organic compound, an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon such as a low molecular compound such as an element, or an oligomer, dendrimer, polymer, etc. of these low molecular compounds of various compounds can be used. As the organic compound, a hole-transporting organic compound having a hole mobility of 10 cm / Vs or more is preferably applied. However, as long as it is a substance with higher hole transportability than electrons, other substances can be used as well. In addition, since these materials used for the charge generation layer 320a are excellent in carrier injection property and carrier transportability, low current driving and low voltage driving of the light-emitting element 330 -6 cm 2 can be realized. However, as long as it is a substance with higher hole transportability than electrons, other substances can be used as well. In addition, since these materials used for the charge generation layer 320a are excellent in carrier injection property and carrier transportability, low current driving and low voltage driving of the light-emitting element 330 can be realized. can be achieved.

[0242] In addition, the charge generation layer 320a may be formed by combining a composite material of an organic compound and a metal oxide with other materials. For example, a layer containing a composite material of an organic compound and a metal oxide and a layer containing a compound selected from electron donors and a compound with high electron transportability can be combined and formed. Further, a layer containing a composite material of an organic compound and a metal oxide and a transparent conductive film selected from among the compounds and a layer containing a compound with high electron transportability can be combined and formed. Also, a layer containing a composite material of an organic compound and a metal oxide and a transparent conductive film can be combined and formed. may be formed in combination with each other.

[0243] The light emitting element 331 having such a configuration may have problems such as energy transfer and quenching. It is difficult to achieve this, and the range of materials to choose from is widened, making it possible to create a light-emitting element that has both high luminous efficiency and a long life. It is also easy to obtain phosphorescence in one light-emitting layer and fluorescence in the other. is.

[0244] The charge generating layer 320a is a layer that generates a charge when a voltage is applied between the electrode 318 and the electrode 322. The electron-injecting layer 320 has a function of injecting electrons into one of the EL layers 320 formed in contact with the generating layer 320a. The other EL layer 320 has a function of injecting holes.

[0245] The light-emitting element 331 shown in FIG. 17B can be realized by changing the type of light-emitting material used in the EL layer 320. In addition, it is possible to obtain various luminescent colors by using a plurality of luminescent materials with different luminescent colors. By using luminescent materials, it is possible to obtain broad spectrum luminescence and white luminescence. do.

[0246] When white light is to be emitted using the light-emitting element 331 shown in FIG. 17(B), a combination of a plurality of EL layers is used. In combination, it is sufficient if the configuration includes red, blue, and green light and emits white light. For example, The light-emitting layer contains a blue fluorescent material as a light-emitting material, and the light-emitting layer contains green and red phosphorescent materials as light-emitting materials. In addition, a light-emitting layer that emits red light and a light-emitting layer that emits green light may be used. Alternatively, the light-emitting layer may have a structure including a light-emitting layer that emits blue light and a light-emitting layer that emits red light. White light can be obtained even if the device has a light-emitting layer that emits light of complementary colors. In a stacked element in which two layers are stacked, the color of the light emitted from one light-emitting layer is different from that of the other. When the colors of the light emitted from each light-emitting layer are to be complementary, the complementary colors are blue and red. Examples include blue and yellow, or blue-green and red.

[0247] In the configuration of the above-mentioned stacked element, a charge generating layer may be disposed between the stacked light emitting layers. By doing so, it is possible to realize a long-life element in the high-brightness region while maintaining a low current density. In addition, the voltage drop due to the resistance of the electrode material can be reduced, allowing for uniform generation over a large area. Light becomes possible.

[0248] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0249] (Embodiment 8) In this embodiment, a pixel 130 that can be applied to the display device 100 will be described with reference to FIG. An example of the planar shape and arrangement of the element will be described.

[0250] FIG. 18A shows a pixel 130 in which the subpixels are arranged in an H-arrangement and a pixel 130 in which the subpixels are arranged in a V-arrangement in the horizontal direction. The pixels 130 are arranged alternately, and the sub-pixels are arranged in an H-arrangement in the vertical direction. In this example, pixels 30 and pixels 130 whose sub-pixels are in a V arrangement are alternately arranged. By alternately arranging the pixels 130 in a V-arrangement, the display quality of the display device 100 can be improved. This can reduce glare.

[0251] FIG. 18B shows an example in which the planar shape of the sub-pixel of the pixel 130 is curved. By making the sub-pixels bent, it is possible to obtain the same effect as the arrangement shown in FIG. This can achieve the effect of reducing variations in the display quality of the display device 100. The bending angle θ shown in FIG. 18(B) is preferably 80° or more and 100° or less, and more preferably 85° or more. A value of 95° or less is more preferable.

[0252] The planar shape and arrangement of the pixels shown in FIGS. 18(A) and 18(B) are the same as those of the display area 131. This is particularly effective when the entire display area 131 or most of the display area 131 is curved.

[0253] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0254] (Embodiment 9) In this embodiment, examples of electronic devices to which the display device of one embodiment of the present invention is applied will be described with reference to FIGS. This will be explained with reference to the surface.

[0255] As an example of an electronic device to which a display device having a flexible shape is applied, a television equipment (also called television or television receiver), monitors for computers, digital Cameras such as barrel cameras and digital video cameras, digital photo frames, and mobile phones (also called mobile phones or mobile phone devices), portable game consoles, personal digital assistants, sound reproduction devices, Examples include large gaming machines such as pachinko machines.

[0256] FIG. 23A shows an example of a wristband-type display device. The device includes a housing 7101, a curved display unit 7102, an operation button 7103, and a transmitting / receiving device 71. Equipped with 04.

[0257] The portable display device 7100 can receive a video signal by the transmitting / receiving device 7104. Video can be displayed on the display unit 7102. Audio signals can also be transmitted to other receiving devices. It is also possible to do so.

[0258] In addition, the operation button 7103 can be used to turn the power on and off and to switch the displayed image. , or adjust the volume of the audio.

[0259] Here, the display device of one embodiment of the present invention is incorporated in the display portion 7102. As a result, a portable display device with good display quality and high reliability can be obtained.

[0260] FIG. 23B shows an example of a mobile phone. The mobile phone 7400 has a housing 7401. In addition to the display unit 7402 having a curved area incorporated therein, the device also includes an operation button 7403, an external connection It is equipped with a connection port 7404, a speaker 7405, a microphone 7406, etc. The phone 7400 is manufactured using a display device as the display portion 7402 .

[0261] In a mobile phone 7400 shown in FIG. 23B, information can be displayed by touching the display portion 7402 with a finger or the like. You can also make calls, enter text, or do any other actions. An operation can be performed by touching the display portion 7402 with a finger or the like.

[0262] Also, by operating the operation button 7403, the power can be turned on and off, and the display unit 7402 can be displayed. For example, from the email creation screen, you can change the type of image displayed. - You can switch to the screen.

[0263] Here, the display device of one embodiment of the present invention is incorporated in the display portion 7402. As a result, the mobile phone can have a high display quality and is highly reliable.

[0264] FIG. 23C shows an example of a television device. The television device 9600 includes: A display portion 9602 is incorporated into a housing 9601. A display portion 960 having a curved region 2, it is possible to display images. Also, a speaker 96 is provided on the side of the housing 9601. 9603. In this example, the housing 9601 is supported by a stand 9604. By applying the display device described in the above embodiment, a highly reliable It may be a television device.

[0265] Here, the display device of one embodiment of the present invention is incorporated in the display portion 9602. As a result, a television device with good display quality and high reliability can be obtained.

[0266] The television set can be operated using an operation switch on the housing 9601 or a separate remote control. In addition, the remote control device can be configured to output the A display unit for displaying information may be provided.

[0267] The television device is assumed to be equipped with a receiver, modem, etc. It can receive television broadcasts and can also communicate by wire or wireless via a modem. By connecting to a network, you can send and receive data in one direction (sender to receiver) or two directions (sender to receiver). It is also possible to communicate information between the recipient and the receiver, or between receivers themselves.

[0268] The structures and methods described in this embodiment may be appropriately combined with the structures and methods described in other embodiments. They can be used in combination. [Explanation of symbols]

[0269] 100 display device 101 Element formation substrate 111 Substrate 112 Adhesive layer 113 Peeling layer 114 Bulkhead 115 Electrode 117 EL layer 118 Electrode 120 Adhesive layer 121 PCB 122 Aperture 123 Anisotropic Conductive Interconnect Layer 124 External electrode 125 Light-emitting element 128 Aperture 129 Aperture 131 Display area 133 Drive Circuit 134 pixel circuit 135 Wiring 136 Wiring 137 Wiring 138 Wiring 139 Wiring 141 Element formation substrate 142 Adhesive layer 143 Peeling layer 145 Insulating Layer 150 Display device 151 Wiring 152 Wiring 153 Aperture 154 Aperture 155 Aperture 156 Wiring 160 areas 161 parts 165 pixels 166 Array Direction 168 Normal 170 areas 171 parts 175 pixels 176 Array Direction 178 Normal 181 parts 205 Insulation Layer 206 Gate electrode 207 Gate insulating layer 208 Semiconductor layer 210 Insulating layer 211 Insulating layer 216 Terminal electrode 219 Wiring 226 Electrode 232 transistors 233 Capacitor 235 light 252 transistors 263 Electrode 264 Light blocking layer 266 Colored layer 268 Overcoat Layer 272 transistors 318 Electrode 320 EL layer 322 electrode 330 Light-emitting element 331 Light-emitting element 431 Transistor 432 Liquid crystal element 434 Transistor 435 nodes 436 nodes 437 nodes 900 Display device 910 Observer 991 Conductive layer 992 Insulation layer 993 Conductive layer 994 board 7100 Portable display devices 7101 Housing 7102 Display section 7103 Operation button 7104 Transmitting and receiving equipment 7400 mobile phone 7401 Housing 7402 Display section 7403 Operation button 7404 External connection port 7405 Speaker 7406 Microphone 9600 Television Equipment 9601 Housing 9602 Display section 9603 Speaker 9604 Stand 117B EL layer 117G EL layer 117R EL layer 125B Light-emitting element 125G light emitting element 125R light emitting element 132a Drive circuit 132b drive circuit 134B pixel circuit 134G pixel circuit 134R pixel circuit 165B subpixel 165G subpixel 165R subpixel 165W subpixel 175B subpixel 175G subpixel 175R subpixel 209a Source electrode 209b Drain electrode 235B light 235G light 235R light 266B Colored layer 266G colored layer 266R colored layer 320a Charge generation layer

Claims

1. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a third transistor, a light-emitting element, and a capacitive element. Each of the first transistor, the second transistor, and the third transistor has an oxide semiconductor in its channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. The source electrode or drain electrode of the third transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. The source electrode or drain electrode of the third transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. A light-emitting device wherein, in a plan view, the distance between the seventh conductive film and the first region in a second direction perpendicular to the first direction is different from the distance between the seventh conductive film and the second region in the second direction.

2. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a third transistor, a light-emitting element, and a capacitive element. Each of the first transistor, the second transistor, and the third transistor has an oxide semiconductor in its channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. The source electrode or drain electrode of the third transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. The source electrode or drain electrode of the third transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the fifth conductive film and the sixth conductive film are arranged side by side in a second direction perpendicular to the first direction. A light-emitting device wherein, in a plan view, the distance between the seventh conductive film and the first region in the second direction is different from the distance between the seventh conductive film and the second region in the second direction.

3. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a third transistor, a light-emitting element, and a capacitive element. Each of the first transistor, the second transistor, and the third transistor has an oxide semiconductor in its channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. The source electrode or drain electrode of the third transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. The source electrode or drain electrode of the third transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the distance between the seventh conductive film and the first region in a second direction perpendicular to the first direction is different from the distance between the seventh conductive film and the second region in the second direction. A light-emitting device in which, in a plan view, the second region is not located on a straight line that passes through the first region and extends in the first direction.

4. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a third transistor, a light-emitting element, and a capacitive element. Each of the first transistor, the second transistor, and the third transistor has an oxide semiconductor in its channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. The source electrode or drain electrode of the third transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. The source electrode or drain electrode of the third transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the fifth conductive film and the sixth conductive film are arranged side by side in a second direction perpendicular to the first direction. In a plan view, the distance between the seventh conductive film and the first region in the second direction is different from the distance between the seventh conductive film and the second region in the second direction. A light-emitting device in which, in a plan view, the second region is not located on a straight line that passes through the first region and extends in the first direction.

5. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a third transistor, a light-emitting element, and a capacitive element. Each of the first transistor, the second transistor, and the third transistor has an oxide semiconductor in its channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. The source electrode or drain electrode of the third transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. The source electrode or drain electrode of the third transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the distance between the seventh conductive film and the first region in a second direction perpendicular to the first direction is different from the distance between the seventh conductive film and the second region in the second direction. In a plan view, the gap between the fifth conductive film and the sixth conductive film has a region located between a first straight line extending in the first direction through the first region and a second straight line extending in the first direction through the second region.

6. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a third transistor, a light-emitting element, and a capacitive element. Each of the first transistor, the second transistor, and the third transistor has an oxide semiconductor in its channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. The source electrode or drain electrode of the third transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. The source electrode or drain electrode of the third transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the fifth conductive film and the sixth conductive film are arranged side by side in a second direction perpendicular to the first direction. In a plan view, the distance between the seventh conductive film and the first region in the second direction is different from the distance between the seventh conductive film and the second region in the second direction. In a plan view, the gap between the fifth conductive film and the sixth conductive film has a region located between a first straight line extending in the first direction through the first region and a second straight line extending in the first direction through the second region.

7. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a third transistor, a light-emitting element, and a capacitive element. Each of the first transistor, the second transistor, and the third transistor has an oxide semiconductor in its channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. The source electrode or drain electrode of the third transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. The source electrode or drain electrode of the third transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the distance between the seventh conductive film and the second region in a second direction perpendicular to the first direction is shorter than the distance between the seventh conductive film and the first region in the second direction. A light-emitting device wherein the sixth conductive film overlaps with the second conductive film.

8. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a third transistor, a light-emitting element, and a capacitive element. Each of the first transistor, the second transistor, and the third transistor has an oxide semiconductor in its channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. The source electrode or drain electrode of the third transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. The source electrode or drain electrode of the third transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the fifth conductive film and the sixth conductive film are arranged side by side in a second direction perpendicular to the first direction. In a plan view, the distance between the seventh conductive film and the second region in the second direction is shorter than the distance between the seventh conductive film and the first region in the second direction. A light-emitting device wherein the sixth conductive film overlaps with the second conductive film.

9. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a third transistor, a light-emitting element, and a capacitive element. Each of the first transistor, the second transistor, and the third transistor has an oxide semiconductor in its channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. The source electrode or drain electrode of the third transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. The source electrode or drain electrode of the third transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the second region is not located on a straight line that passes through the first region and extends in the first direction. In a plan view, the distance between the seventh conductive film and the second region in a second direction perpendicular to the first direction is shorter than the distance between the seventh conductive film and the first region in the second direction. A light-emitting device wherein the sixth conductive film overlaps with the second conductive film.

10. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a third transistor, a light-emitting element, and a capacitive element. Each of the first transistor, the second transistor, and the third transistor has an oxide semiconductor in its channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. The source electrode or drain electrode of the third transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. The source electrode or drain electrode of the third transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the fifth conductive film and the sixth conductive film are arranged side by side in a second direction perpendicular to the first direction. In a plan view, the second region is not located on a straight line that passes through the first region and extends in the first direction. In a plan view, the distance between the seventh conductive film and the second region in the second direction is shorter than the distance between the seventh conductive film and the first region in the second direction. A light-emitting device wherein the sixth conductive film overlaps with the second conductive film.

11. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a third transistor, a light-emitting element, and a capacitive element. Each of the first transistor, the second transistor, and the third transistor has an oxide semiconductor in its channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. The source electrode or drain electrode of the third transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. The source electrode or drain electrode of the third transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the gap between the fifth conductive film and the sixth conductive film has a region located between a first straight line extending in the first direction through the first region and a second straight line extending in the first direction through the second region. In a plan view, the distance between the seventh conductive film and the second region in a second direction perpendicular to the first direction is shorter than the distance between the seventh conductive film and the first region in the second direction. A light-emitting device wherein the sixth conductive film overlaps with the second conductive film.

12. It has pixels, scan lines, potential supply lines, a first signal line, and a second signal line. The aforementioned pixel has a first sub-pixel and a second sub-pixel. Each of the first sub-pixel and the second sub-pixel comprises a first transistor, a second transistor, a third transistor, a light-emitting element, and a capacitive element. Each of the first transistor, the second transistor, and the third transistor has an oxide semiconductor in its channel formation region. The source electrode or drain electrode of the first transistor of the first subpixel is electrically connected to the first signal line. The source electrode or the other drain electrode of the first transistor of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The gate electrode of the first transistor of the first subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the first subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. The source electrode or drain electrode of the third transistor of the first sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the first sub-pixel. One electrode of the capacitive element of the first sub-pixel is electrically connected to the gate electrode of the second transistor of the first sub-pixel. The other electrode of the capacitive element of the first sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the first sub-pixel. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the second signal line. The source electrode or drain electrode of the first transistor of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The gate electrode of the first transistor of the second subpixel is electrically connected to the scan line. The source electrode or drain electrode of the second transistor of the second subpixel is electrically connected to the potential supply line. The source electrode or drain electrode of the second transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. The source electrode or drain electrode of the third transistor of the second sub-pixel is electrically connected to the pixel electrode of the light-emitting element of the second sub-pixel. One electrode of the capacitive element of the second sub-pixel is electrically connected to the gate electrode of the second transistor of the second sub-pixel. The other electrode of the capacitive element of the second sub-pixel is electrically connected to the other source electrode or drain electrode of the second transistor of the second sub-pixel. The first conductive film, which functions as the gate electrode of the second transistor of the first subpixel, also functions as one electrode of the capacitive element of the first subpixel. The second conductive film, which functions as the other source electrode or drain electrode of the second transistor of the first sub-pixel, also functions as the other electrode of the capacitive element of the first sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the first sub-pixel. The third conductive film, which functions as the gate electrode of the second transistor of the second subpixel, also functions as one electrode of the capacitive element of the second subpixel. The fourth conductive film, which functions as the other source electrode or drain electrode of the second transistor of the second sub-pixel, also functions as the other electrode of the capacitive element of the second sub-pixel, and also functions as one of the source electrode or drain electrode of the third transistor of the second sub-pixel. The upper surface of the second conductive film has a first region in which it is in contact with a fifth conductive film that functions as a pixel electrode of the light-emitting element of the first sub-pixel in the region in which it overlaps with the first conductive film. The upper surface of the fourth conductive film has a second region in which it is in contact with a sixth conductive film that functions as a pixel electrode of the light-emitting element of the second subpixel, in a region that overlaps with the third conductive film. In a plan view, the second conductive film and the fourth conductive film are arranged side by side in the first direction. In a plan view, the seventh conductive film, which functions as the potential supply line, has a shape that extends along the first direction. In a plan view, the fifth conductive film and the sixth conductive film are arranged side by side in a second direction perpendicular to the first direction. In a plan view, the gap between the fifth conductive film and the sixth conductive film has a region located between a first straight line extending in the first direction through the first region and a second straight line extending in the first direction through the second region. In a plan view, the distance between the seventh conductive film and the second region in the second direction is shorter than the distance between the seventh conductive film and the first region in the second direction. A light-emitting device wherein the sixth conductive film overlaps with the second conductive film.

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