Temperature-compensated power detection circuit and its RF front-end module

Abstract

We provide a power detection circuit with temperature compensation function and its RF front-end module. The power detection circuit includes at least one stage of a power detection unit and an integration unit, the input terminal of the integration unit is connected to the output terminal of the power detection unit, the resistor connected to the bias voltage of the power detection unit is a thermistor, and / or the resistor connected to the reference earth potential of the integration unit is a thermistor. This solves the technical problem that the temperature coefficient required for the bias voltage Vreg differs for each circuit module, and multiple bias voltages Vreg with different temperature coefficients are required to supply power. Therefore, the provided power detection circuit and its RF front-end module have beneficial effects such as simple structure design, reduced manufacturing cost, and reliable performance.

Description

[Technical field]

[0001] The present invention relates to a power detection circuit with temperature compensation function, and also to an RF front-end module and corresponding electronic device including the power detection circuit, which belong to the RF integrated circuit technical field. [Background technology]

[0002] An RF front-end (RFFE) module is a core component of electronic devices such as smartphones, and is mainly used to transmit and receive RF signals of different frequencies. A typical RF front-end module includes components such as an RF switch, a low-noise amplifier, a filter, a duplexer, and a power amplifier.

[0003] As shown in Figure 1, an example of an existing RF front-end module includes a power amplifier consisting of three power amplification units (PA1-PA3), a power supply circuit, and a power detection circuit. Among them, the power supply is responsible for providing the power required for the power amplifier to operate. The power amplifier is responsible for amplifying and processing the RF signal. The function of the power detection circuit is to convert the power of the RF front-end into a corresponding voltage value and feed it back to the electronic device's processor to calibrate the output power.

[0004] In conventional technology, RF front-end modules used in electronic devices usually require an operating temperature range of -25℃ to 85℃ or -40℃ to 110℃. Generally, in order to compensate for the performance difference between high and low temperatures of heterojunction bipolar transistors (HBTs), it is necessary to provide a temperature compensation circuit with a negative temperature coefficient in the power supply and adjust the voltage supplied to the HBT transistor to compensate for the temperature characteristics of the HBT transistor. In the power detection circuit integrated in the HBT transistor process, a voltage with a temperature coefficient is required to adjust the corresponding relationship curve between the input power and the output voltage of the power detection circuit at different temperatures so that the output power is stable at different temperatures. However, existing RF front-end modules often use multiple voltages, and the temperature coefficients required for the voltages of different circuit modules are different, so multiple voltages with different temperature coefficients are required to supply power to different circuit modules respectively. This complicates the circuit design and increases the manufacturing cost of the RF front-end module. Summary of the Invention [Problem to be solved by the invention]

[0005] The technical problem to be solved by the present invention is to provide a power detection circuit with a temperature compensation function.

[0006] Another problem to be solved by the present invention is to provide an RF front-end module and an electronic device including the above power detection circuit.

[0007] To achieve the above objectives, the present invention adopts the following technical solutions: According to a first aspect of the embodiment of the present invention, a power detection circuit with temperature compensation function includes at least one stage of a power detection unit and an integration unit, an input end of the integration unit is connected to an output end of the power detection unit.

[0008] The resistor connected to the bias voltage of the power detection unit is a thermistor, and / or the resistor connected to the reference earth potential of the integration unit is a thermistor.

[0009] Preferably, the bias voltage is a voltage having a temperature coefficient.

[0010] Preferably, the integration unit includes a seventh HBT transistor, a tenth capacitor, and a tenth resistor, an eleventh resistor, a twelfth resistor and a thirteenth resistor, in which the output end of the power detection unit is connected to the base of the seventh HBT transistor, and the collector of the seventh HBT transistor is connected to the bias voltage. The emitter of the seventh HBT transistor is connected to the reference ground potential via the eleventh resistor on one hand, and is connected to the output end of the integration unit via the twelfth resistor on the other hand. Both ends of the tenth resistor are respectively connected to the base and collector of the seventh HBT transistor, one end of the thirteenth resistor is connected to the reference ground potential and the other end is connected to the output end, and the tenth capacitor is connected to the emitter of the seventh HBT transistor on one hand, and is connected to the reference ground potential on the other hand.

[0011] Preferably, the bias voltage and the tenth resistor of the integration unit both have a positive temperature coefficient or a negative temperature coefficient.

[0012] Preferably, in the integration unit, the following formula is satisfied: V7e = (Vreg-Vbe7)-I*R10

[0013] Where V7e is the emitter voltage of the seventh HBT transistor, Vreg is the bias voltage, Vbe7 is the voltage between the base and emitter of the seventh HBT transistor, R10 is the resistance value of the tenth resistor, and I is the output current of the power detection unit.

[0014] Preferably, the power detection unit includes a first HBT transistor, a second HBT transistor, a first capacitor, a second capacitor, a third capacitor, and a first resistor, a second resistor, and a seventh resistor. The signal input terminal of the power detection circuit is connected to the first capacitor, the other terminal of the first capacitor is connected to the first resistor and the collector of the first HBT transistor, the other terminal of the first resistor is connected to the base of the first HBT transistor, and the emitter of the first HBT transistor is connected to a reference ground potential. The collector of the first HBT transistor is connected to a bias voltage via a seventh resistor on one hand, and to the base of the second HBT transistor via a second resistor on the other hand. The emitter of the second HBT transistor is connected to the reference ground potential, the collector of the second HBT transistor is connected to the input terminal of the integration unit, and the second capacitor is connected to the first resistor at one end and to the emitter of the first HBT transistor at the other end. The third capacitor has one end connected to the second resistor and the other end connected to the emitter of the second HBT transistor.

[0015] Preferably, when the seventh resistor of the power detection unit connected to the bias voltage has a positive temperature coefficient, the bias voltage has a negative temperature coefficient, or when the seventh resistor of the power detection unit connected to the bias voltage has a negative temperature coefficient, the bias voltage has a positive temperature coefficient.

[0016] Preferably, when the power detection unit has at least two stages, the collectors of the second HBT transistors of each stage in the power detection unit are commonly connected to the input terminal of the integration unit and function as the output terminal of the power detection unit of that stage.

[0017] According to a second aspect of the embodiment of the present invention, an RF front-end module includes the above power detection circuit.

[0018] According to a third aspect of the embodiment of the present invention, an electronic device includes the above-mentioned power detection circuit.

[0019] Compared with the prior art, the power detection circuit with temperature compensation function provided by the present invention adopts a technical solution of using a power supply circuit with a single output voltage to provide the bias power supply required for the operation of two or more stages of power amplification units and one or more stages of power detection units, thereby solving the technical problem that the temperature coefficient requirements of the bias voltage Vreg are different for each circuit module, and multiple bias voltages Vreg with different temperature coefficients are required to supply power. Therefore, the power detection circuit and its RF front-end module provided by the present invention have beneficial effects such as simple structure design, reduced manufacturing cost, and reliable performance. [Brief description of the drawings]

[0020] [Figure 1] FIG. 1 shows a typical RF front-end module in the prior art. [Diagram 2] FIG. 2 is a schematic diagram showing a circuit of an RF front-end module provided by an embodiment of the present invention. [Diagram 3] FIG. 3 is a schematic diagram showing a circuit of one embodiment of a power detection circuit in the RF front-end module shown in FIG. [Figure 4a] FIG. 3 is a schematic diagram showing another embodiment of the power detection circuit in the RF front-end module shown in FIG. 2. [Figure 4b] FIG. 3 is a schematic diagram showing a circuit of yet another embodiment of the power detection circuit in the RF front-end module shown in FIG. 2. [Diagram 5] 2 is a curve showing the relationship between the input power and the output voltage of a power detection circuit without temperature compensation in an embodiment of the present invention, where the abscissa represents the input power of the power detection circuit and the ordinate represents the output voltage of the power detection circuit. [Figure 6] 1 is a curve showing the relationship between the input power and the output voltage of a power detection circuit with temperature compensation function according to an embodiment of the present invention, where the abscissa represents the input power of the power detection circuit and the ordinate represents the output voltage of the power detection circuit. [Figure 7]1 is a diagram showing an electronic device employing a power detection circuit provided by the present invention; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] The technical solutions of the present invention are described in further detail below with reference to the accompanying drawings and specific embodiments.

[0022] 2, the RF front-end module provided by the embodiment of the present invention includes a power amplifier 1, a power supply circuit 2, and a power detection circuit (abbreviated as VDET) 3. Among them, the output terminal of the power amplifier 1 is connected to the input terminal of the power detection circuit 3, and the output terminal of the power supply circuit 2 is connected to the bias power supply terminals of the power amplifier 1 and the power detection circuit 3, respectively. The power supply circuit 2 supplies the bias voltage and current required for the operation of the power amplifier 1 and the power detection circuit 3, and the power detection circuit 3 detects the output power of the power amplifier 1 and converts it into an output voltage (Vdet_out) proportional to the power.

[0023] In one embodiment of the present invention, the power amplifier 1 is preferably realized by using components of group III and V compound processes. The power amplifier 1 includes three stages of power amplification units, namely, a first stage power amplification unit PA1, a second stage power amplification unit PA2 and a third stage power amplification unit PA3. The input terminal (PAIN) of the first stage power amplification unit PA1 is connected to an external RF signal, the output terminal of the first stage power amplification unit PA1 is connected to the input terminal of the second stage power amplification unit PA2, the output terminal of the second stage power amplification unit PA2 is connected to the input terminal of the third stage power amplification unit PA3, and the output terminal of the third stage power amplification unit PA3 is connected to the input terminal of the power detection circuit 3.

[0024] In one embodiment of the present invention, the power supply circuit 2 is preferably realized using components of a CMOS or SOI process, where the power supply circuit 2 outputs a bias voltage Vreg1 to supply the three stages of power amplification units of the power amplifier 1 and the power detection circuit 3 with the bias voltage for operation, respectively.

[0025] As shown in FIG. 3, the power detection circuit 3 provided by the present invention is a power detection circuit with a temperature compensation function, including three stages of power detection units and an integration unit Sum. The three stages of power detection units are a first stage power detection unit Class 1, a second stage power detection unit Class 2, and a third stage power detection unit Class 3. Each stage of the power detection unit is composed of two HBT transistors, three capacitors, and three resistors. The integration unit Sum is composed of an HBT transistor, a capacitor, and four resistors. In order to realize the temperature compensation function, the resistors connected to the bias voltage Vreg of the power detection units and the integration unit of each stage are thermistors, and / or the resistors connected to the reference earth potential (i.e., the ground terminal, the same below) of the integration unit are also thermistors.

[0026] In the embodiment shown in Fig. 3, the first-stage power detection unit Class 1 includes a first HBT transistor 1, a second HBT transistor 2, a first capacitor C1, a second capacitor C2, a third capacitor C3, and a first resistor R1, a second resistor R2, and a seventh resistor R7, of which the seventh resistor R7 is a thermistor. The signal input terminal RFIN of the power detection circuit is connected to the first capacitor C1, the other end of the first capacitor C1 is connected to the first resistor R1 and the collector of the first HBT transistor 1, the other end of the first resistor R1 is connected to the base of the first HBT transistor 1, and the emitter of the first HBT transistor 1 is connected to the reference ground potential. The collector of the first HBT transistor 1 is connected to the bias voltage Vreg via the seventh resistor R7 on the one hand, and to the base of the second HBT transistor 2 via the second resistor R2 on the other hand. The emitter of the second HBT transistor 2 is connected to the reference ground potential. The collector of the second HBT transistor 2 is connected to the output terminals of the second stage power detection unit and the third stage power detection unit, and then commonly connected to the input terminal of the integration unit, which serves as the output terminal of the power detection unit of the stage. The second capacitor C2 has one end connected to the first resistor R1 and the other end connected to the emitter of the first HBT transistor 1. The third capacitor C3 has one end connected to the second resistor R2 and the other end connected to the emitter of the second HBT transistor 2.

[0027] In the embodiment shown in Fig. 3, the second-stage power detection unit Class 2 includes a third HBT transistor 3 and a fourth HBT transistor 4, a fourth capacitor C4, a fifth capacitor C5 and a sixth capacitor C6, and a third resistor R3, a fourth resistor R4 and an eighth resistor R8, where the eighth resistor R8 is a thermistor. The signal input terminal RFIN of the power detection circuit is connected to the fourth capacitor C4 of the second-stage power detection unit through the first capacitor C1 of the first-stage power detection unit, and the other end of the fourth capacitor C4 is connected to the third resistor R3 and the collector of the third HBT transistor 3. The other end of the third resistor R3 is connected to the base of the third HBT transistor 3, and the emitter of the third HBT transistor 3 is connected to the reference ground potential. The collector of the third HBT transistor 3 is connected to the bias voltage Vreg through the eighth resistor R8 on the one hand, and to the base of the fourth HBT transistor 4 through the fourth resistor R4 on the other hand. The emitter of the fourth HBT transistor 4 is connected to the reference ground potential, and the collector of the fourth HBT transistor 4 is connected to the output terminals of the first stage power detection unit and the third stage power detection unit, and then commonly connected to the input terminal of the integration unit. The fifth capacitor C5 has one end connected to the third resistor R3 and the other end connected to the emitter of the third HBT transistor 3. The sixth capacitor C6 has one end connected to the fourth resistor R4 and the other end connected to the emitter of the fourth HBT transistor 4.

[0028] In the embodiment shown in Fig. 3, the third-stage power detection unit Class 3 includes a fifth HBT transistor 5 and a sixth HBT transistor 6, a seventh capacitor C7, an eighth capacitor C8 and a ninth capacitor C9, and a fifth resistor R5, a sixth resistor R6 and a ninth resistor R9, where the ninth resistor R9 is a thermistor. The signal input terminal RFIN of the power detection circuit is connected to the seventh capacitor C7 of the third-stage power detection unit through the first capacitor C1 of the first-stage power detection unit and the fourth capacitor C4 of the second-stage power detection unit. The other end of the seventh capacitor C7 is connected to the fifth resistor R5 and the collector of the fifth HBT transistor 5, the other end of the fifth resistor R5 is connected to the base of the fifth HBT transistor 5, and the emitter of the fifth HBT transistor 5 is connected to the reference ground potential. The collector of the fifth HBT transistor 5 is connected to the bias voltage Vreg through the ninth resistor R9 on the one hand, and to the base of the sixth HBT transistor 6 through the sixth resistor R6 on the other hand. The emitter of the sixth HBT transistor 6 is connected to the reference ground potential, and the collector of the sixth HBT transistor 6 is connected to the output terminals of the first stage power detection unit and the second stage power detection unit, and then commonly connected to the input terminal of the integration unit. The eighth capacitor C8 has one end connected to the fifth resistor R5 and the other end connected to the emitter of the fifth HBT transistor 5. The ninth capacitor C9 has one end connected to the sixth resistor R6 and the other end connected to the emitter of the sixth HBT transistor 6.

[0029] In the embodiment shown in Fig. 3, the integration unit Sum includes a seventh HBT transistor 7, a tenth capacitor C10, and a tenth resistor R10, an eleventh resistor R11, a twelfth resistor R12 and a thirteenth resistor R13, among which at least one of the tenth resistor R10, the eleventh resistor R11 and the thirteenth resistor R13 is a thermistor. The output terminal of the third-stage power detection unit is connected to the base of the seventh HBT transistor 7 of the integration unit Sum, the collector of the seventh HBT transistor 7 is connected to a bias voltage Vreg, and the emitter of the seventh HBT transistor 7 is connected to the reference ground potential via the eleventh resistor R11 on the one hand, and to the output terminal Vout of the integration unit Sum via the twelfth resistor R12 on the other hand. The tenth resistor R10 has one end connected to the base and the collector of the seventh HBT transistor 7, and the thirteenth resistor R13 has one end connected to the reference earth potential and the other end connected to the output terminal Vout. The tenth capacitor C10 has one end connected to the emitter of the seventh HBT transistor 7 and the other end connected to the reference earth potential.

[0030] The operation principle of achieving the temperature compensation function by the power detection circuit provided by the present invention will now be described in detail with reference to FIG. V7e=(Vreg-Vbe7)-(I2+I4+I6)*R10 (1) I2 ≒ (Vreg-Vbe1) / R7 (2) I4 ≒ (Vreg-Vbe3) / R8 (3) I6 ≒ (Vreg-Vbe5) / R9 (4)

[0031] Among these, V7e is the emitter voltage of the seventh HBT transistor 7, Vreg is the bias voltage, Vbe7 is the voltage between the base and emitter of the seventh HBT transistor 7, Vbe1 is the voltage between the base and emitter of the first HBT transistor 1, Vbe3 is the voltage between the base and emitter of the third HBT transistor 3, Vbe5 is the voltage between the base and emitter of the fifth HBT transistor 5, and I2, I4 and I6 are the output currents of the first stage power detection unit Class 1, the second stage power detection unit Class 2 and the third stage power detection unit Class 3, respectively.

[0032] If the temperature coefficient of the bias voltage Vreg is assumed to be negative, the bias voltage Vreg increases as the temperature decreases. In this case, if a thermistor with a negative temperature coefficient is used for the resistor R10, the resistance value of the resistor R10 increases. At the same time, if a thermistor with a positive temperature coefficient is used for the resistors R7, R8, and R9, the resistance values ​​of the resistors R7, R8, and R9 all decrease, so that I2, I4, and I6 increase. According to the above formulas 1, 2, 3, and 4, I2, I4, and I6 all increase, so that V7e decreases, and the output voltage Vout also decreases accordingly, which can be seen to realize the temperature compensation function.

[0033] If the temperature coefficient of the bias voltage Vreg is assumed to be a positive temperature coefficient, the bias voltage Vreg decreases as the temperature decreases. In this case, if a thermistor with a positive temperature coefficient is used for the resistor R10, the resistance value of the resistor R10 decreases. At the same time, if a thermistor with a negative temperature coefficient is used for the resistors R7, R8, and R9, the resistance values ​​of the resistors R7, R8, and R9 all increase, so I2, I4, and I6 decrease. According to the above formulas 1, 2, 3, and 4, I2, I4, and I6 all decrease, so V7e increases, and the output voltage Vout also increases accordingly, which can be seen to realize the temperature compensation function.

[0034] It should be noted that the power amplifier used in the above embodiment is a three-stage power amplification unit, and the corresponding power detection circuit is a three-stage power detection unit. In the power detection circuit, one or more of the resistors R7, R8, R9, R10, R11 and R13 are thermistors. In another embodiment of the present invention, according to the temperature conditions and the requirements of test accuracy, on the one hand, the power amplifier can include two or more stages of power amplification units. The corresponding power detection circuit can include one or more stages of power detection units, and the contents of the above formulas 1, 2, 3 and 4 are adjusted accordingly. For example, as shown in FIG. 4a, in the schematic diagram of a power detection circuit including two stages of power detection units, the collector of the second HBT transistor in the first stage power detection unit is connected in parallel with the collector of the second HBT transistor in the second stage power detection unit, and then commonly connected to the input end of the integration unit, which serves as the output end of the power detection unit of this stage. As shown in Fig. 4b, in the schematic diagram of the power detection circuit including four stages of power detection units, the collectors of the second HBT transistors in the first, second, third and fourth stages of the power detection units are connected in parallel with each other and then commonly connected to the input terminal of the integration unit, which respectively function as the output terminal of the power detection unit of this stage. On the other hand, in the power detection circuit, the resistors connected to the bias voltage Vreg of the power detection units and integration units of each stage and the resistors connected to the reference ground potential of the integration units may all or partly be thermistors.

[0035] In order to reflect the actual technical effect of the power detection circuit and its RF front-end module provided by the embodiments of the present invention, the inventors have carried out experimental tests thereon. In one of the tests, the bias voltage Vreg of the power amplifier is made to have a negative temperature coefficient, and the curves measuring the relationship between the input power and the output voltage in a conventional power detection circuit without temperature compensation function are shown in FIG. 5. Here, the abscissa indicates the input power of the power detection circuit, and the ordinate indicates the output voltage of the power detection circuit. As can be seen from FIG. 5, for the same input power, under different temperature conditions, the voltage curves output from the power detection circuit do not overlap, and the output voltage is different when the temperature is different.

[0036] In another test under completely the same conditions, the bias voltage Vreg of the power amplifier is a negative temperature coefficient, and the curve of the relationship between the input power and the output voltage in the power detection circuit with temperature compensation function provided by the present invention is shown in FIG. 6. In which, the abscissa is the input power of the power detection circuit, and the ordinate is the output voltage of the power detection circuit. As can be seen from FIG. 6, for the same input power, under different temperature conditions, the voltage curves output by the power detection circuit provided by the embodiment of the present invention are basically overlapped. Comparing FIG. 5 and FIG. 6, it can be seen that the technical effect of the present invention is very obvious.

[0037] The power detection circuit provided by the present invention can be applied to various RF front-end modules, which may include a power amplifier, a power supply circuit, a power detection circuit, as well as other existing conventional devices such as an RF front-end receiving link, an RF front-end transmitting link, etc., which are not described in detail herein.

[0038] In addition, the power detection circuit provided by the present invention can also be used in electronic devices as an important component of a communication component. The electronic devices referred to herein refer to computer devices that can be used in a mobile environment and support various communication standards such as GSM, EDGE, TD_SCDMA, TDD_LTE, FDD_LTE, 5G, etc., including mobile phones, laptop computers, tablet computers, in-vehicle computers, etc. In addition, the technical solution provided by the present invention can also be applied to other communication component applications, such as communication base stations.

[0039] As shown in FIG. 7, the electronic device includes at least a processor and a memory, and may further include a communication component, a sensor component, a power component, a multimedia component, and an input / output interface based on actual demand. Among them, the memory, the communication component, the sensor component, the power component, the multimedia component, and the input / output interface are all connected to the processor. The memory can be a static random access memory (SRAM), an electrically erasable programmable read-only memory (EEPROM), an erasable programmable read-only memory (EPROM), a programmable read-only memory (PROM), a read-only memory (ROM), a magnetic memory, a flash memory, etc., and the processor can be a central processing unit (CPU), a graphics processor (GPU), a field programmable logic gate array (FPGA), an application specific integrated circuit (ASIC), a digital signal processing (DSP) chip, etc. Other communication components, sensor components, power components, multimedia components, etc. can all be realized by adopting general-purpose components, and detailed explanations are omitted here.

[0040] As can be seen from the detailed description of the technical solution of the present invention through the embodiments, the power detection circuit with temperature compensation function provided by the present invention adopts the technical solution of using a power supply circuit with a single output voltage to provide the bias power supply required for the operation of two or more stages of power amplification units and one or more stages of power detection units, thereby solving the technical problem that the temperature coefficient requirements of the bias voltage Vreg are different for each circuit module, and multiple bias voltages Vreg with different temperature coefficients are required to supply power. Therefore, the power detection circuit and its RF front-end module provided by the present invention have beneficial effects such as simple structure design, reduced manufacturing cost, and reliable performance.

[0041] The above is a detailed description of the power detection circuit with temperature compensation function and its RF front-end module provided by the present invention. Any obvious modifications made to the present invention by those skilled in the art without departing from the essence of the present invention will fall within the scope of protection of the patent right of the present invention.

Claims

1. A power detection circuit with a temperature compensation function, The power supply includes at least one power detection unit and an integration unit, and an input end of the integration unit is connected to an output end of the power detection unit; A power detection circuit, characterized in that the resistor connected to the bias voltage of the power detection unit is a thermistor, and / or the resistor connected to the reference earth potential of the integration unit is a thermistor.

2. 2. The power detection circuit according to claim 1, wherein the bias voltage is a voltage having a temperature coefficient.

3. 3. The power detection circuit according to claim 1, wherein the integration unit includes a seventh HBT transistor, a tenth capacitor, and a tenth resistor, an eleventh resistor, a twelfth resistor and a thirteenth resistor, wherein an output end of the power detection unit is connected to a base of the seventh HBT transistor, a collector of the seventh HBT transistor is connected to the bias voltage, an emitter of the seventh HBT transistor is connected to a reference ground potential via the eleventh resistor on the one hand, and is connected to the output end of the integration unit via the twelfth resistor on the other hand, both ends of the tenth resistor are respectively connected to the base and collector of the seventh HBT transistor, one end of the thirteenth resistor is connected to the reference ground potential and the other end is connected to the output end, and the tenth capacitor is connected to the emitter of the seventh HBT transistor and the other end is connected to the reference ground potential.

4. 4. The power detection circuit of claim 3, wherein the bias voltage and the tenth resistor of the integration unit both have a positive temperature coefficient or a negative temperature coefficient.

5. In the integration unit, the following formula is satisfied: V7e=(Vreg-Vbe7)-I*R10 5. The power detection circuit of claim 4, wherein V7e is the emitter voltage of the seventh HBT transistor, Vreg is the bias voltage, Vbe7 is the voltage between the base and emitter of the seventh HBT transistor, R10 is the resistance value of the tenth resistor, and I is the output current of the power detection unit.

6. The power detection unit includes a first HBT transistor, a second HBT transistor, a first capacitor, a second capacitor, a third capacitor, and a first resistor, a second resistor, and a seventh resistor, a signal input terminal of the power detection circuit is connected to the first capacitor, the other end of the first capacitor is connected to the first resistor and the collector of the first HBT transistor, the other end of the first resistor is connected to the base of the first HBT transistor, the emitter of the first HBT transistor is connected to a reference ground potential, and the collector of the first HBT transistor is connected to a reference ground potential.

13. The power detection circuit according to claim 1, further comprising: a first HBT transistor connected to a bias voltage via a seventh resistor, and on the other hand connected to the base of the second HBT transistor via a second resistor; the emitter of the second HBT transistor is connected to a reference earth potential; the collector of the second HBT transistor is connected to the input terminal of the integration unit; a second capacitor having one end connected to the first resistor and the other end connected to the emitter of the first HBT transistor; and a third capacitor having one end connected to the second resistor and the other end connected to the emitter of the second HBT transistor.

7. 7. The power detection circuit of claim 6, wherein when a seventh resistor connected to the bias voltage of the power detection unit has a positive temperature coefficient, the bias voltage has a negative temperature coefficient, or when a seventh resistor connected to the bias voltage of the power detection unit has a negative temperature coefficient, the bias voltage has a positive temperature coefficient.

8. 7. The power detection circuit according to claim 6, wherein when the power detection unit has at least two stages, the collector of the second HBT transistor of each stage of the power detection unit is commonly connected to the input terminal of the integration unit and functions as the output terminal of the power detection unit of that stage.

9. An RF front-end module comprising the power detection circuit according to any one of claims 1 to 8.

10. 9. An electronic device comprising the power detection circuit according to claim 1.

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