Enhanced EUV Materials, Photoresists, and Methods of Use Thereof

Abstract

This application discloses novel zwitterionic materials that provide unexpected results useful in photolithographic resist compositions. In particular, the compounds and photoresists made therefrom result in improved line geometries defined by EUV light and improved photoresist speed of lithography. Also provided are resist compositions containing the disclosed novel zwitterions.

Description

Technical Field

[0001] Reference to Prior Applications This application claims the benefit of U.S. Provisional Application Serial No. 63 / 385,980, filed July 7, 2022, and entitled "ENHANCED EUV PHOTORESISTS AND METHODS OF THEIR USE", and U.S. Provisional Application Serial No. 63 / 392,998, filed July 28, 2022, and entitled "ENHANCED EUV PHOTORESISTS AND METHODS OF THEIR USE", under 35 U.S.C. § 119, the entire disclosures of which are incorporated herein by reference.

[0002] This patent application discloses novel zwitterionic materials that, when incorporated into EUV photoresists, improve sensitivity (photospeed), resolution (linewidth roughness), or both.

Background Art

[0003] Extreme ultraviolet lithography (EUVL) is one of the major technology options for replacing optical lithography in the high-volume manufacturing of semiconductors with feature sizes <20 nm. The extremely short wavelength (13.4 nm) is an important factor enabling the high resolution required for multiple technology generations. Further, the overall system concept, such as scanning exposure, projection optics, mask format, and resist technology, is very similar to that used in current optical technologies. Similar to previous lithography generations, EUVL consists of resist technology, exposure tool technology, and mask technology. The main challenges are EUV light source output and throughput. Any improvement in EUV power will directly affect the current stringent resist sensitivity specifications. In fact, the main problem in EUVL imaging is resist sensitivity; the lower the sensitivity, the higher the required light source output or the longer the exposure time required to fully expose the resist. The lower the output level, the greater the impact of noise on the line edge roughness (LER) of the printed line.

[0004] In order to improve the performance of functional characteristics, various attempts have been made to change the composition of EUV photoresist compositions. Electronic device manufacturers have been continuously pursuing an improvement in the resolution of patterned photoresist images. It is desirable to obtain new photoresist compositions that can provide enhanced imaging capabilities, including new photoresist compositions useful for EUVL.

[0005] As is well known, in the manufacturing process of various electronic devices or semiconductor devices such as ICs and LSIs, it includes, for example, finely patterning a resist layer on the surface of a substrate material such as a semiconductor silicon wafer. This fine patterning process has conventionally been performed by photolithography. In this method, a positive or negative photosensitive composition is uniformly applied to the substrate surface to form a thin layer, and actinic rays (ultraviolet rays (UV), deep UV, vacuum UV, extreme UV, X-rays, electron beams, ion beams, etc.) are selectively irradiated through a transmissive or reflective mask, followed by a development process to selectively dissolve the applied photosensitive layer in the areas exposed or unexposed to the actinic rays, leaving a patterned resist layer on the substrate surface. The patterned resist layer thus obtained can be used as a mask in subsequent processes on the substrate surface such as etching. The manufacture of structures having dimensions on the nanometer order is a very interesting field because it enables the realization of electronic and optical devices that utilize new phenomena such as the quantum confinement effect and further enables an improvement in the packing density of components. As a result, there is an increasing demand for an improvement in the miniaturization achieved by using actinic rays having a shorter wavelength than conventional ultraviolet light in the resist pattern. Therefore, currently, instead of conventional ultraviolet light, electron beams (e-beams), excimer laser beams, EUV, BEUV, and X-rays are used as actinic rays having a short wavelength. The minimum size obtained is partially determined by the performance of the resist material and partially by the wavelength of the actinic rays. Various materials have been proposed as suitable resist materials. For example, in the case of a negative resist based on polymer crosslinking, there is an inherent resolution limit of about 10 nm, which is approximately the radius of a single polymer molecule.

[0006] It is also known to apply a technique called "chemical amplification" to resist materials. Chemically amplified resist materials are generally multi-component formulations that include a matrix material, which is often a polymer component such as a polyhydroxystyrene (PHOST) resin protected by acid-labile groups and a photoacid generator (PAG), and one or more additional components that impart desired properties to the resist. The matrix material contributes to properties such as etching resistance and mechanical stability. Chemical amplification occurs through a catalytic process involving PAG, and as a result, the conversion of multiple resist molecules occurs in a single irradiation event. The acid generated by PAG reacts catalytically with the polymer, causing loss of functional groups or crosslinking events. The reaction rate can be accelerated, for example, by heating the resist film. In this way, a small number of irradiation events cause a large number of solubility change events, significantly improving the apparent sensitivity of the material to actinic radiation. As described above, chemically amplified resists can be either positive-working or negative-working. Therefore, there is a continuing need for materials and compositions that enable the formation of finer lines and spaces, including improvements in pattern integrity, such as reduction of line edge roughness, line width roughness, and line wobbling.

SUMMARY OF THE INVENTION

[0007] Novel materials are disclosed and claimed herein that provide unexpected results for photolithography patterns having geometric features less than 20 nm. Further, line edge roughness, line width roughness, and line wobbling are also significantly reduced.

[0008] In a first embodiment, compositions comprising chemical structures (I), (II), (III), and (IV) are disclosed and claimed herein:

CHEM.

[0009] In the second embodiment, a composition of the above embodiment is disclosed and claimed herein, wherein R1, R2, R10, and R12 contain an ester group, -(C=O)-O-R20, bonded to a carbon anion, and in the formula, R20 is a substituted or unsubstituted phenyl group or heterocyclic group, a substituted or unsubstituted alkyl or alkenyl group.

[0010] In the third embodiment, a composition of any of the above embodiments is disclosed and claimed herein, wherein R20 contains -CH2-CH=CH-CH2-Ph.

[0011] In the fourth embodiment, a composition of any of the above embodiments is disclosed and claimed herein, wherein the substitution value contains an acid-labile leaving group.

[0012] In the fifth embodiment, a composition of any of the above embodiments is disclosed and claimed herein, wherein the acid-labile leaving group contains a t-BOC group, an ester group, a ketal, or an acetal.

[0013] In the sixth embodiment, a composition of any of the above embodiments is disclosed and claimed herein, wherein R10 and R12 contain a substituted or unsubstituted ring structure.

[0014] In a further embodiment, a composition of any of the above embodiments is disclosed and claimed herein that further comprises, as a mixture, a) at least one photoacid generator, b) at least one acid-curable crosslinker, and optionally at least one nucleophilic quencher.

[0015] In a further embodiment, a composition of any of the above embodiments is disclosed and claimed herein, wherein the photoresist is sensitive to ultraviolet (UV), deep UV, vacuum UV, extreme UV, X-rays, electron beams, and ion beams.

[0016] As the requirements for feature size continue to decrease, for example, below 20 nm, it is necessary to control cationic polymerization and / or crosslinking in a negative working system. In photoresists based on acid-catalyzed deprotection, such as a positive working system, a base quencher is usually utilized to control the migration of many photo-generated acids to regions where deprotection is not desired. Epoxy-based negative working photoresists are initiated by photo-generated acids, but the active polymerization and crosslinking species are not photo-acids. After the initial reaction of epoxy, or other groups such as oxetane, or acid-labile protecting groups, protonation of the epoxy (or oxetane) oxygen by the photo-acid continues to occur, and it can be easily understood that an epoxyonium intermediate is obtained. However, after this initiation stage, the reaction continues by the attack of the epoxyonium intermediate by the oxygen of the neutral epoxy group. Then, propagation, polymerization, and / or crosslinking continue until completion. In these photopatterning processes, control of polymerization and / or crosslinking is important to prevent line growth, sharpening, or line width reduction, and polymer growth in undesired regions. These problems include line edge roughness, line width reduction, line wobbling, and other undesired pattern geometries. This concept is important for line-and-space geometries below 20 nm. Therefore, any method of controlling polymerization and / or crosslinking in a photochemical system, such as EUV, for example, is highly desirable.

[0017] Stable zwitterions useful in the present disclosure include, for example, zwitterions containing a stable internal carbanion associated with a positive charge at other locations on the molecule. As used herein, the term "stable internal anion" means the negatively charged region of the zwitterion.

[0018] A photolithography composition containing at least one of the described zwitterions is disclosed and claimed herein.

[0019] As described above, base quenchers are used in standard positive-working systems where initiation and propagation depend on photo-generated acid. In the negative-working system of the present disclosure, the photo-generated acid functions to initiate the curing process, but further polymerization and / or cross-linking do not depend on acid. Base quenchers used in general photolithography systems have very limited effects in the currently presented systems required to produce line and space geometries of less than 20 nm.

[0020] The zwitterions of the present disclosure are incorporated into photoresists containing a photoacid generating component. For example, depending on the energy source such as I-line (wavelength 365 nm) or extreme UV (EUV, 13 nm), the amount of acid generated per exposure is different.

[0021] Without being bound by theory, it is believed that zwitterions function as acid buffers in regions of high light / radiation intensity. As used herein, the term buffer refers to the interaction between a stable anion additive and a photo-generated acid.

[0022] In exposures based on extreme UV, many H+ atoms are generated (by photoelectron generation), and it is believed that such buffering improves the structure, clarity, and integrity of the patterns created in photolithography.

[0023] In the high-exposure region, it is considered that the zwitterions of the photoresist react with a high level of photo-generated acid. Next, the remaining acid reacts with the polymerization component and / or cross-linking component of the resist. In this example, the epoxy polymerization component and / or cross-linking component of the resist is an epoxy component.

[0024] In the low-exposure region, or the region where acid migration occurs, i.e., the region where a low level of photo-generated acid is generated, the stable internal anion of the zwitterion functions as a quencher, preventing the initiation and / or propagation of polymerization and / or cross-linking from moving into the unexposed region and preventing an unwanted photopattern structure. Further, the stable internal anion of the zwitterion functions as an acid scavenger in these low-illumination systems.

[0025] Studies have shown that the stable internal anion of the zwitterion in the photoresist of the present disclosure, particularly the EUV resist, enhances the contrast and reduces the LER due to its buffering and quenching properties. Further, it is considered that the stable internal anion of the zwitterion of the present disclosure functions as a quencher that prevents the polymerization of the photosensitive composition from moving into the unexposed region.

[0026] In the region of high light intensity, the stable anion of the zwitterion that has already been used as a buffer cannot function as a quencher. When the anion has already been used as a buffer, the propagation or chain transfer (the mechanism of polymerization) proceeds as expected. The zwitterion may function as a very effective molecular switch.

[0027] Examples of the synthesis of zwitterion compounds useful in the present disclosure can all be found in U.S. Patent Nos. 9,122,156, 9,229,322, and 9,519,215 by Robinson, et al., which are hereby incorporated by reference into this specification.

Brief Description of the Drawings

[0028]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Mode for Carrying Out the Invention

[0029] As used herein, the conjunction "and" is intended to be inclusive, and the conjunction "or" is not intended to be exclusive, unless the context indicates otherwise or requires otherwise. For example, the expression "or alternatively" is intended to be exclusive. As used herein, the term "exemplary" is intended to illustrate examples and not to indicate preference. As used herein, the term "energetically accessible" is used to describe products that may be thermodynamically or kinetically available via a chemical reaction.

[0030] As used herein, terms such as "have", "containing", "including", "comprising" are open-ended terms indicating the presence of the recited element or feature, but do not exclude additional elements or features. The articles "a", "an", and "the" are intended to include not only the singular but also the plural, unless the context clearly indicates otherwise.

[0031] As used herein, the term "zwitterion" means a molecule that contains both a positive charge center and a negative charge center on the same molecule, either alpha to each other or further spaced within the molecule. A zwitterion compound, also called an inner salt, is a neutral compound having formal unit charges of opposite signs.

[0032] As used herein, the terms "acid", "proton", and "H+" are used interchangeably and refer to the acidic ion of a protic acid.

[0033] Surprisingly, it has been discovered that adding certain stable and novel zwitterion materials to a negative resist improves the geometric shape and integrity of the line and space after EUV exposure and processing, for example, improving line edge roughness, line wobbling, line width roughness, undercutting, bridging, line collapse, etc.

[0034] Compositions are disclosed and claimed herein that include a solvent and at least one compound of chemical structures (I), (II), (III), and (IV) that include a positive cationic center and a negatively charged substituent.

Chemical formula

[0035] Furthermore, a composition of the above embodiment is disclosed and claimed herein, wherein R1, R2, R10, and R12 contain an ester group bonded to a carbanion, -(C=O)-O-R20, and R20 is a substituted or unsubstituted phenyl group or heterocyclic group, a substituted or unsubstituted alkyl or alkenyl group, such as -CH2-CH=CH-CH2-Ph.

[0036] Furthermore, a composition of any of the above embodiments containing an acid-labile leaving group bonded to the ester component is disclosed and claimed herein. The acid-labile leaving group may include, for example, a t-BOC group, an alkyl carbonate group, an ester group, a ketal, or an acetal.

[0037] R10 and R12 are, for example, a substituted or unsubstituted cyclic structure such as a cycloalkyl group, an aromatic group, a condensed aromatic group, a heterocyclic group, a condensed heterocyclic group, an aralkyl group, etc. Any composition of the above embodiments further disclosed and claimed herein.

[0038] As a mixture, any composition of the above embodiments further disclosed and claimed herein further comprises a) at least one photoacid generator, b) at least one acid-curable crosslinking agent, and optionally c) at least one nucleophilic quencher. Quenchers useful in the present disclosure are, for example, onium sulfonates such as triphenylsulfonium tosylate, triflate, nonaflate, diphenyliodonium camphorsulfonate.

[0039] Any composition of the above embodiments further disclosed and claimed herein, wherein the photoacid generator comprises an onium salt compound such as a sulfonium salt, a phosphonium salt or an iodonium salt, a sulfonimide compound, a halogen-containing compound, a sulfone compound, an ester sulfonate compound, a quinonediazide compound, a diazomethane compound, a dicarboximidyl sulfonic acid ester, an irideneaminooxysulfonic acid ester, sulfanyldiazomethane, or a mixture thereof.

[0040] At least one crosslinking agent comprises an acid-sensitive monomer or polymer, and at least one crosslinking agent comprises at least one of glycidyl ether, glycidyl ester, glycidyl amine, methoxymethyl group, ethoxymethyl group, butoxymethyl group, benzyloxymethyl group, dimethylaminomethyl group, diethylaminomethyl group, dibutoxymethyl group, dimethylolaminomethyl group, diethylolaminomethyl group, dibutyrolaminomethyl group, morpholinomethyl group, acetoxymethyl group, benzyloxymethyl group, formyl group, acetyl group, vinyl group or isopropenyl group, or other acid-sensitive (reactive) crosslinking agents well known in the art.

[0041] Furthermore, the solvent can be, for example, at least one of ether, ester, ether ester, alcohol, ketone, cyclic ketone, ketone ester, ethylene glycol monoalkyl ether, diethylene glycol dialkyl ether, propylene glycol monoalkyl ether, propylene glycol dialkyl ether, alkyl phenyl ether, anisole, acetate, hydroxyacetate, lactate, and halogenated solvent, or other solvents well-known in the art. Any composition of the above embodiments is further disclosed and claimed herein.

[0042] Examples of photoacid generators, crosslinking agents, and solvents useful in the present disclosure can be found in U.S. Patent No. 9,519,215 B2 to A.P.G. Robinson, et al., which is hereby incorporated by reference in its entirety.

[0043] Any composition of the above embodiments is further disclosed and claimed herein, wherein the material and the photoresist composition are sensitive to ultraviolet (UV), deep UV, vacuum UV, extreme UV, X-rays, electron beams, and ion beams.

[0044] It should be noted that many of the novel compounds disclosed and claimed herein are photosensitive because they are composed of sulfonium functional groups, which are well-known to react with many categories of actinic radiation to produce acids, free radicals, and / or other reactive decomposition products. Similarly, the iodonium salts disclosed and claimed herein are also known to be photosensitive, similar to the sulfonium compounds claimed herein. These compounds can exist alone in actinic radiation-sensitive compositions such as photoresists, or can be expected to assist the synergistic effect with photoacid generators commonly found in currently available photosensitive compositions.

[0045] Experiment The following are representative examples of zwitterions useful in the present disclosure.

[0046] Compounds N-2 and N-3 were obtained from Sigma-Aldrich.

[0047] Compound I-1:

Chem.

[0048] Compound S-1

Chem.

[0049] Compound S-2

Chem.

[0050] Compound N - 1

Chemical formula

[0051] Formulations General formulations: The following formulations are general formulations in which the materials of the present disclosure were used in tests. When testing materials with different molecular weights, the molar ratios were maintained. Techniques for removing metal inclusions are well known in the literature.

[0052] It has also been found that combinations can be obtained by combining two or more zwitterionic materials containing different isomers of the present disclosure in various ratios to form a blend of the properties of their mixed zwitterions.

[0053] The percent solids in the formulation can be varied to obtain a film thickness of 20 nm upon rotation and drying.

[0054] Formulation 1 Since the molecular weight of the materials can vary, all amounts of the materials in the formulation are expressed in molar equivalents (ME) to keep the exact ratio of the materials constant.

[0055] 536 mL of ethyl lactate, 0.095 ME of the test compound (see below), and 1.00 ME of the crosslinking agent (CL02 below) were mixed by sonication. The mixture was pushed from a one-neck round-bottom flask through a cannula into a pre-conditioned metal ion removal filter stack at 6 psi. To 500 mL of the mixture, 0.455 ME of PAG02 (below) and 0.174 ME of the nucleophilic quencher Q02 (below) were added and mixed until completely dissolved at a concentration of 16.5 g / L. The formulation was filtered through a 0.2 μm PTFE filter, shielded from light, and kept at 5 °C until use.

[0056] Formulation 2 536 mL of ethyl lactate, 0.063 ME of the test compound (see below), and 1.00 ME of the crosslinking agent (CL02 below) were mixed by sonication. The mixture was pushed from a one-neck round-bottom flask through a cannula into a pre-conditioned metal ion removal filter stack at 6 psi. To 500 mL of the mixture, 0.455 ME of PAG02 (below) and 0.077 ME of the nucleophilic quencher Q02 (below) were added and mixed until completely dissolved at a concentration of 15 g / L. The formulation was filtered through a 0.2 μm PTFE filter, shielded from light, and kept at 5 °C until use.

Chemical formula

[0057] _Test of the formulation Note: The formulation is prepared at a concentration such that a film thickness of 20 nm is obtained when rotated and dried at 1500 - 2500 rpm. The film thickness is measured using an optical technique called the polarization analysis method.

[0058] The silicon wafer was spin - coated at 2000 rpm using the Brewer Science Optistack AL212 lower layer and baked at 205 °C for 30 seconds. The resist formulation was pipetted onto the wafer and rotated at a rotational speed generally between 1200 - 2300 rpm to obtain a target film thickness of 20 nm. The wafer was baked at 60 °C for 3 minutes to confirm that the film was still suitable for exposure (e.g., no dewetting). The wafer was exposed using a non - contact mask using the PSI synchrotron, and the mask contains a line - space pattern with a pitch of 44 nm, and multiple dies are exposed on one wafer while increasing the dose. Optionally, the wafer can be subjected to a post - exposure bake at 60 °C - 80 °C for 1 - 2 minutes. The wafer was immersed in nBA (n - butyl acetate) for 30 - 60 seconds for development and then optionally rinsed with MIBC (methyl isobutyl carbinol) for 15 seconds.

[0059] Next, the pattern was inspected using SEM and images were taken throughout the dose.

[0060] The line width and line - width roughness were measured using a software package called SMILE. The line width and LWR were plotted against the dose, a trend line was calculated, the dose required to achieve a 22 - nm line was calculated from this plot, and the LWR at the 22 - nm line was recorded. Critical dimension (CD) in nanometers mJ / cm 2 Sensitivity in units (DtS - Dose to Size) Line - width roughness (LWR) in nanometers Line - edge roughness (LER) in nanometers

[0061] The following Chart 1 shows the results of the photolithography process described herein. The first column of this chart lists exemplary compounds used in the formulations disclosed and described herein. Column 2 shows the dose-to-size (DtS) of energy required to obtain the desired line / space geometry using the lithography mask used, in mJ / cm 2 is shown. Column 3 shows the line edge roughness (LER) of the resulting lines in nm. Column 4 shows the line width roughness of the resulting spaces in nm. Column 5 shows the critical dimension (CD) of the photoresist composition in nm. Column 6 shows the formulation used. [Table 1]

[0062] Chart 1 As can be seen from the above data, I-1 has a significantly improved photospeed compared to the control compound and the other compounds tested. This result is thought to be due to the fact that I-1 may mimic a photoacid generator by its iodonium configuration.

[0063] Both S-1 and S-2 showed improvement in LER and LWR, and excellent reproduction of the target mask. [Table 2]

[0064] Chart 2 Chart 2 is a comparison of cationic nitrogen zwitterions with a control. It can be seen that N-1 has a significantly improved photospeed compared to the control and the other compounds under study, while the LER and LWR are slightly improved compared to X-2 and N-3.

[0065] The results have shown that various very specific zwitterions exhibit significant improvements in line width roughness, line edge roughness, or photospeed, or a combination of these three, when used in EUV photoresists. Therefore, the novel compounds of the present disclosure and the unexpected ones obtained therefrom bring about great progress in microlithography and next-generation nanotechnology.

Claims

1. A photoresist composition comprising a solvent and at least one zwitterion having a chemical structure selected from (I), (II), (III) or (IV), 【Chemical 1】 wherein R1, R2, R10 and R12 contain an ester, a ketone or an electron-withdrawing group bonded to the central carbon anion, R3 is a substituted or unsubstituted aromatic group, a heterocyclic group, or a condensed aromatic group, R4 and R5 are the same or different, and are a substituted or unsubstituted aromatic group, a heterocyclic group, a condensed aromatic group, an alkyl group, an aralkyl group, or R4 and R5 are bonded to form a substituted or unsubstituted heterocycle or a condensed heterocycle, and R6 to R8 are the same or different, and are a substituted or unsubstituted aromatic group, a heterocyclic group, a condensed aromatic group, an alkyl group, an aralkyl group, or R6 to R8 are bonded to form a substituted or unsubstituted heterocycle, a condensed heterocycle, an aromatic heterocycle, or a condensed heterocyclic ring, a photoresist composition.

2. R1, R2, R10 and R12 contain an ester group, —(C═O)—O—R20 bonded to the carbon anion, wherein R20 is a substituted or unsubstituted phenyl group or heterocyclic group, a substituted or unsubstituted alkyl or alkenyl group, the composition according to claim 1.

3. R20 is -CH ２ The composition according to claim 2, comprising -CH=CH-Ph.

4. The composition according to claim 2, wherein the substituent contains an acid-labile leaving group.

5. The composition according to claim 3, wherein the acid-labile leaving group contains an alkyloxycarbonyl group, an ester group, a ketal or an acetal.

6. R10 and R12 contain a substituted or unsubstituted ring structure, the composition according to claim 1.

7. The composition according to claim 1, wherein the solvent contains at least one of ether, ester, ether ester, alcohol, ketone, ketone ester, ethylene glycol monoalkyl ether, diethylene glycol dialkyl ether, propylene glycol monoalkyl ether, propylene glycol dialkyl ether, alkyl phenyl ether, anisole, acetate ester, hydroxyacetate ester, lactate ester, and halogenated solvent.

8. The composition according to claim 1, further comprising, as a mixture, a) at least one photoacid generator, b) at least one acid-curable crosslinking agent, and c) at least one nucleophilic quencher.

9. R1, R2, R10, and R12 contain an ester group, —(C═O)—O—R20, bonded to the carbon anion, where R20 is a substituted or unsubstituted phenyl group or heterocyclic group, a substituted or unsubstituted alkyl or alkenyl group, the composition according to claim 7.

10. R20 is -CH ２ The composition according to claim 8, comprising -CH=CH-Ph.

11. The composition according to claim 8, wherein the substituent contains an acid-labile leaving group.

12. The composition according to claim 9, wherein the acid-labile leaving group contains an alkyl carbonate group, an ester group, a ketal, or an acetal.

13. R10 and R12 contain a substituted or unsubstituted ring structure, the composition according to claim 7.

14. The at least one photoacid generator is selected from sulfonium salts, iodonium salts, sulfonimides, halogen-containing compounds, sulfone compounds, ester sulfonate compounds, diazomethane compounds, dicarboximidyl sulfonic acid esters, imidene aminooxy sulfonic acid esters, sulfanyldiazomethane, or mixtures thereof, the composition according to claim 7.

15. The at least one crosslinking agent contains an acid-sensitive monomer or polymer, and the at least one crosslinking agent contains at least one of glycidyl ether, glycidyl ester, glycidyl amine, methoxymethyl group, ethoxymethyl group, butoxymethyl group, benzyloxymethyl group, dimethylaminomethyl group, diethylaminomethyl group, dibutoxymethyl group, dimethylolaminomethyl group, diethylolaminomethyl group, dibutyrolaminomethyl group, morpholinomethyl group, acetoxymethyl group, benzyloxymethyl group, formyl group, acetyl group, vinyl group, or isopropenyl group, the composition according to claim 7.

16. The composition according to claim 7, wherein the nucleophilic quencher contains one or more triphenylsulfonium sulfonates or diphenyliodonium sulfonates.

17. The photoresist is sensitive to ultraviolet (UV), deep UV, vacuum UV, extreme UV, X-rays, electron beams, and ion beams, the composition according to claim 7.

Images