Bezel-less camera and sensor hole

Abstract

Embodiments described herein relate to subpixel circuits, displays including subpixel circuits, and methods of forming subpixel circuits that can be utilized in displays such as organic light-emitting diode (OLED) displays. Some configurations of the displays described herein include a subpixel circuit, at least one sensor opening adjacent to an overhang structure, and the adjacent subpixel circuit. The at least one sensor opening includes a sensor disposed therebelow. Other configurations of the displays described herein include a subpixel circuit including an OLED subpixel and a transparent subpixel, resulting in a sensor disposed therebelow. The configurations described herein utilize an integrated sensor to eliminate the need for a bezel, reduce the display's dead zone, and increase the display's transmittance.

Description

[Technical Field]

[0001] FIELD OF THE INVENTION The embodiments described herein relate generally to displays. More particularly, the embodiments described herein relate to subpixel circuits, displays including subpixel circuits, and methods of forming subpixel circuits that can be utilized in displays such as organic light emitting diode (OLED) displays. [Background technology]

[0002] Input devices, including display devices, can be used in a variety of electronic systems. Organic light-emitting diodes (OLEDs) are light-emitting diodes (LEDs) in which a light-emitting electroluminescent layer is a film of organic compounds that emits light in response to an electric current. OLED devices are classified as bottom-emitting devices if the emitted light passes through a transparent or semitransparent bottom electrode and the substrate on which the panel is fabricated. Top-emitting devices are classified based on whether the light emitted from the OLED device exits through a lid added after the device is fabricated. OLEDs are used to create display devices in many electronic devices today. Electronic device manufacturers today are pushing to reduce the size of these display devices while providing higher resolution than was possible just a few years ago.

[0003] OLED pixel patterning is currently based on processes that limit panel size, pixel resolution, and substrate size. Rather than utilizing fine metal masks, pixels must be patterned using photolithography. Currently, OLED pixel patterning requires lifting off the organic material after the patterning process. When lifted off, the organic material leaves behind particle issues that inhibit OLED performance. Therefore, what is needed in the art is a subpixel circuit that can be utilized in displays such as OLED displays, a display including a subpixel circuit, and a method for forming the subpixel circuit. Summary of the Invention

[0004] In one embodiment, a display is provided. The display includes a backplane, a plurality of subpixel circuits separated by an overhanging grid disposed on the backplane, each subpixel circuit having a subpixel surrounded by an overhanging structure of the overhanging grid, each subpixel having an anode connected to a thin film transistor (TFT) of the backplane and an organic light emitting diode (OLED) material disposed on the anode, and a sensor opening. The subpixel circuits surround the sensor opening and are separated from the sensor opening by the overhanging grid. The sensor openings are surrounded by their respective overhanging structures. The sensors are disposed below the sensor openings, either in or below the backplane.

[0005] In another embodiment, a display is provided that includes a backplane, a plurality of subpixel circuits separated by an overhanging grid disposed on the backplane, each subpixel circuit having a subpixel surrounded by an overhanging structure of the overhanging grid, each subpixel having an anode connected to a TFT of the backplane and an OLED material disposed over the anode, and a plurality of sensor arrays, outer sensor arrays of the plurality of sensor arrays adjacent to the subpixel circuits and separated from the subpixel circuits by the overhanging grid, each sensor array having a subpixel opening surrounded by the overhanging structure of the overhanging grid. Sensors are disposed either in or below the backplane below the plurality of sensor arrays.

[0006] In another embodiment, a subpixel circuit is provided. The subpixel circuit includes a backplane and an overhanging grid disposed on the backplane, the overhanging grid defining OLED subpixels and transparent subpixels, each of the OLED subpixels and transparent subpixels surrounded by an overhanging structure of the overhanging grid. The OLED subpixels have an anode connected to a thin film transistor (TFT) of the backplane and an OLED material disposed over the anode.

[0007] In another embodiment, a method is provided that includes depositing organic light-emitting diode (OLED) material over a backplane, where an overhanging grid defines subpixel areas and transparent areas, disposing a cathode over the OLED material over the subpixel areas and the transparent areas, depositing an encapsulation layer over the backplane, forming a resist layer in the subpixel areas of the backplane, removing one or more exposed portions of the encapsulation layer, removing one or more exposed portions of the OLED material, and removing the resist layer.

[0008] In yet another embodiment, a device is provided that includes a backplane and a plurality of overhang structures, wherein adjacent overhang structures of the plurality of overhang structures define at least one subpixel and at least one transparent area, and that is fabricated by a process that includes: depositing an OLED material over the backplane, the OLED material being disposed over an anode of at least one subpixel, and depositing a cathode, the cathode being disposed over the OLED material of the at least one subpixel, and a sensor or light emitter in the at least one transparent area operable to receive or project light through the backplane and the transparent area.

[0009] In order that the above-described features of the present disclosure may be understood in detail, a more particular description of the present disclosure briefly summarized above can be made with reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted that the accompanying drawings illustrate only exemplary embodiments and therefore should not be considered limiting in scope, as the present disclosure may admit of other equally effective embodiments. [Brief explanation of the drawings]

[0010] [Figure 1A] 1 is a schematic cross-sectional top view of a display having an aperture configuration according to an embodiment. [Figure 1B] 1 is a schematic top cross-sectional view of a display having an array shape according to an embodiment. [Figure 1C] 1 is a schematic cross-sectional top view of a display having a transparent subpixel configuration according to an embodiment. [Figure 1D] 1 is a schematic cross-sectional top view of a display having a transparent subpixel configuration according to an embodiment. [Figure 2A] 1 is a schematic cross-sectional view of a subpixel circuit and a sensor opening, according to an embodiment. [Figure 2B] 1 is a schematic cross-sectional view of a portion of a subpixel circuit and a sensor array, according to an embodiment. [Figure 2C] 1 is a schematic cross-sectional view of a sub-pixel circuit according to an embodiment. [Figure 2D] 1 is a schematic cross-sectional view of a sub-pixel circuit according to an embodiment. [Figure 3A-3C] 1 is a schematic cross-sectional top view of a transparent sub-pixel configuration according to an embodiment. [Figure 4] 1 is a flow diagram of a method for forming a display according to an embodiment. [Figures 5A-5E] 4A-4C are schematic cross-sectional views of a backplane 100 during a method 400 for forming a display having an aperture configuration, according to an embodiment. [Figures 6A-6E] 1A-1C are schematic cross-sectional views of a backplane during a method for forming a display having an array configuration or a transparent subpixel configuration, according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0011] For ease of understanding, where possible, identical reference numbers have been used to designate identical elements common to the figures. It is intended that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0012] FIELD OF THE INVENTION

[0002] Embodiments described herein generally relate to displays. More particularly, embodiments described herein relate to subpixel circuits that can be utilized in displays such as organic light-emitting diode (OLED) displays, displays including subpixel circuits, and methods of forming subpixel circuits. Some configurations of displays described herein include a subpixel circuit, at least one sensor opening adjacent to an overhang structure, and the adjacent subpixel circuit. The at least one sensor opening includes a sensor disposed therebelow. Other configurations of displays described herein include a subpixel circuit including an OLED subpixel and a transparent subpixel, resulting in a sensor disposed therebelow. The configurations described herein utilize an integrated sensor to eliminate the need for a bezel, reduce the display's dead zone, and increase the display's transmittance.

[0013] FIG. 1A is a schematic top cross-sectional view of a display 100 having an aperture configuration 100A. FIG. 2A is a schematic cross-sectional view of a subpixel circuit 101 and a sensor opening 103 of the aperture configuration 100A. The display 100 with the aperture configuration 100A includes a plurality of subpixel circuits 101 and at least one sensor opening 103. The display 100 includes a backplane 102. The backplane 102 includes a plurality of thin film transistors (TFTs) 105. At least one sensor 107 is disposed below the backplane 102 as shown in FIG. 2A or within the backplane 102 as shown in FIG. 2C. The sensor 107 is a complementary metal-oxide semiconductor (CMOS), a charge-coupled device (CCD), a metasurface, a photodiode, a solar cell, a light emitter, or a combination thereof. The light emitter can be an IR light emitter, an LED, or other light emitter.

[0014] The anode 104 can be patterned on the backplane 102 and is defined by adjacent pixel-defining layer (PDL) structures 109 disposed on the backplane 102. Some embodiments of the display 100 of the present disclosure have other structures that define the anode 104, and do not utilize the PDL structures 109. In some embodiments that can be combined with other disclosures described herein, the PDL structures 109 are disposed on the backplane 102, as shown in FIG. 2B. The anode 104 is disposed on the backplane 102 between the PDL structures 109. The anode 104 and PDL structures 109 have the same height as shown in FIG. 2B. The configuration of the anode 104 and PDL structures 109 in FIG. 2B is applicable to other embodiments described herein.

[0015] In one embodiment, a metal-containing layer is pre-patterned on the backplane 102. For example, the backplane 102 is a pre-patterned indium tin oxide (ITO) glass substrate. The metal-containing layer is configured to operate the anode 104 of each subpixel. The anode 104 may include, but is not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials. The anode 104 is connected to the TFT 105 of the backplane 102. In some embodiments that can be combined with other embodiments described herein, the anode 104 of the OLED subpixel 111 is disposed above the TFT 105, e.g., on the TFT 105. In other embodiments, the anode 104 is connected to the TFT 105 of the backplane 102 via wiring, as shown in FIG. 2D .

[0016] A display 100 having an aperture configuration 100A includes subpixel circuits 101 separated by an overhanging grid 110. Each subpixel circuit 101 includes multiple OLED subpixels 111. The OLED subpixels 111 are at least a first OLED subpixel 111a, a second OLED subpixel 111b, and a third OLED subpixel 111c. While the figure shows a first OLED subpixel 111a, a second OLED subpixel 111b, and a third OLED subpixel 111c, the subpixel circuits 111 of the embodiments described herein can include more than two OLED subpixels 111, such as a fourth subpixel and a fifth subpixel. Each OLED subpixel 111 includes an OLED material 112 configured to emit white, red, green, blue, or other color light when energized. For example, the OLED material 112 of the first OLED subpixel 111a emits green light when energized, the OLED material of the second OLED subpixel 111b emits blue light when energized, the OLED material of the third OLED subpixel 111c emits red light when energized, and the OLED materials of the fourth and fifth OLED subpixels emit other colored light when energized.

[0017] Each OLED subpixel 111 is surrounded by an overhang structure 113 of the overhang grid 110. In embodiments including a PDL structure 109, the overhang structure 113 is disposed on top of each PDL structure 109. The overhang structures 113 include at least a second structure 113B disposed on top of a first structure 113A. Each overhang structure 113 includes an overhang 115. The overhang 115 is defined by an extension 117 of the second structure 113B that extends laterally beyond the sidewall of the first structure 113A. The second structure 113B includes one of a non-conductive material, an inorganic material, or a metal-containing material. The first structure 113A includes one of a non-conductive material, an inorganic material, or a metal-containing material. The non-conductive material includes, but is not limited to, an inorganic silicon-containing material. For example, the silicon-containing material includes an oxide or nitride of silicon, or a combination thereof. The metal-containing material includes at least one of a metal or alloy, such as titanium (Ti), aluminum (Al), aluminum neodymium (AlNd), molybdenum (Mo), molybdenum tungsten (MoW), copper (Cu), or a combination thereof.

[0018] The inorganic material of the first structure 113A and the second structure 113B includes silicon nitride (Si3N4), silicon oxide (SiO2), silicon oxynitride (Si2N2O), or a combination thereof. The overhang structure 110 can remain in place, i.e., is permanent. In one embodiment that can be combined with other embodiments described herein, the first structure 113A includes an inorganic material such as silicon, e.g., amorphous silicon, and the second structure 113B includes germanium, copper, chromium, gallium arsenide (GaAs), a Group III element, a Group IV element, a III-V compound semiconductor, or a combination thereof. In another embodiment that can be combined with other embodiments described herein, the first structure 113A includes germanium, copper, chromium, gallium arsenide (GaAs), a Group III element, a Group IV element, a III-V compound semiconductor, or a combination thereof, and the second structure 113B includes an inorganic material such as silicon, e.g., amorphous silicon. Thus, no organic material is left behind that is lifted off the overhanging structures, which can interfere with OLED performance. Eliminating the need for a lift-off procedure also improves throughput.

[0019] 2A-2D, each OLED subpixel 111 includes a cathode 114 disposed over an OLED material 112. The cathode 114 includes a conductive material such as a metal. The cathode 114 can be formed from chromium, titanium, aluminum, indium tin oxide (ITO), APT, a compound, or another suitable conductive material. A local passivation layer 116 is disposed over the OLED material 112, the cathode 114, and at least a portion of the overhang structure 113.

[0020] The aperture configuration 100A includes a subpixel circuit 101 surrounding a sensor aperture 103. The subpixel circuit 101 surrounding the sensor aperture 103 is separated from the sensor aperture 103 by an overhanging grid 110. As shown in FIG. 2A , an overhanging structure 113C separates one of the OLED subpixels 111, such as the third OLED subpixel 111c, from the sensor aperture 103. The sensor aperture 103 is surrounded by the overhanging structure 113A. The sensor aperture 103 has a sensor 107 thereunder, disposed either in or below the backplane 102. A global passivation layer 120 is disposed over the subpixel circuit 101 and the sensor aperture 103. An intermediate layer 118 is disposed between the overhanging grid 110, the local passivation layer 116, and the portion backplane 102 of the sensor aperture 103. In some embodiments that can be combined with other embodiments described herein, such as FIG. 2A , a secondary layer 119 is disposed between the local passivation layer 116 and the interlayer 118 within the OLED subpixel 111. In embodiments, the secondary layer 119 is disposed between the backplane 102 and the interlayer 118 (as shown in FIG. 2A ) or between the PDL material 109A and the interlayer 118 (the embodiment of FIG. 2D ). In other embodiments that can be combined with other embodiments described herein, such as FIG. 2D , the PDL material 109A is disposed between the interlayer 118 in the sensor opening 103 and the backplane 102. The PDL material 109A is transparent or semi-transparent. The passivation layer 120 and the interlayer 118 are transparent or semi-transparent. Thus, light is either emitted (if the sensor 107 is an emitter) or received by the sensor 107.

[0021] 1B is a schematic top cross-sectional view of a display 100 having an array configuration 100B. FIG. 2B is a schematic cross-sectional view of a subpixel circuit 101 and a portion of a sensor array 121 of the array configuration 100B. The display 100 in the array configuration 100B includes a plurality of subpixel circuits 101 and a plurality of sensor arrays 121. A sensor opening includes the plurality of sensor arrays 121. An outer sensor array of the plurality of sensor arrays 121 is adjacent to the subpixel circuit 101. At least one sensor 107 is disposed below the plurality of sensor arrays 121. The sensor 107 is disposed in or below the backplane 102.

[0022] A display 100 having array configuration 100B includes subpixel circuits 101 separated by an overhanging grid 110. An outer sensor array adjacent to the subpixel circuits 101 is separated from the subpixel circuits 101 by the overhanging grid 110. Each subpixel circuit 101 includes multiple OLED subpixels 111. Each OLED subpixel 111 is surrounded by an overhanging structure 113 of the overhanging grid 110. Each OLED subpixel 111 includes an OLED material 112 configured to emit white, red, green, blue, or other color light when energized. Each sensor array 121 includes multiple subpixel openings 123. Each subpixel opening 123 is surrounded by an overhanging structure 113 of the overhanging grid 110. As shown in FIG. 2B, an overhanging structure 113C separates one of the OLED subpixels 111, such as the third OLED subpixel 111c, from the outer sensor array. Each subpixel opening 123 has a portion of a sensor 107 located either in or below the backplane 102. A global passivation layer 120 is disposed over the subpixel circuit 101 and the plurality of sensor arrays 121. An intermediate layer 118 is disposed between the overhanging grid 110, the local passivation layer 116, and the portion of the backplane 102 at the subpixel opening 123. In some embodiments that can be combined with other embodiments described herein, such as FIG. 2D , a PDL material 109A is disposed between the intermediate layer 118 at the subpixel opening 123 and the backplane 102. The PDL material 109A is transparent or semi-transparent. The passivation layer 120 and the intermediate layer 118 are transparent or semi-transparent. Thus, light is emitted (if the sensor 107 is a light emitter) or received by the sensor 107.

[0023] 1C and 1D are schematic cross-sectional top views of a display 100 having a transparent subpixel configuration 124. FIGS. 2C and 2D are schematic cross-sectional views of a subpixel circuit 101.

[0024] A display 100 with a transparent subpixel configuration 124 includes multiple subpixel circuits 101 separated by an overhanging grid 110. Each subpixel circuit 101 has multiple OLED subpixels 111. In some embodiments of the display 100 that can be combined with other embodiments described herein, the transparent subpixel configuration 124 includes a portion 123A of the subpixel circuit 101, which includes an OLED subpixel 111 and a transparent subpixel 125, as shown in FIG. 1C . The portion 123A of the subpixel circuit 101 includes at least one sensor 107 disposed therebelow. The sensor 107 is disposed in or below the backplane 102. The transparent subpixels 125 of the subpixels 101 in the portion 123A are transparent so that light can be emitted through the transparent subpixels 125 (if the sensor 107 is an emitter) or received by the sensor 107. 1D , which can be combined with other embodiments described herein, one or more sensors 107 are disposed in or below the backplane 102 in the viewing area 123B of the display 100. The viewing area 123B can be the entire viewable area of ​​the display 100. In other embodiments of the display 100 with the transparent subpixel configuration 124 of FIG. 1D , the one or more sensors 107 are not disposed in or below the backplane 102. The transmittance of the transparent subpixels 125 in embodiments without the one or more sensors is increased. The transparent subpixels 125 of the subpixels 101 are transparent to allow light to be emitted through the viewing area 123B of the display 100 (if the sensor 107 is an emitter) or received by the one or more sensors 107.

[0025] The subpixel circuits 101 are separated by an overhang grid 110. Each OLED subpixel 111 and transparent subpixel 125 is surrounded by an overhang structure 113 of the overhang grid 110. Each OLED subpixel 111 and transparent subpixel 125 is surrounded by an overhang structure 113 of the overhang grid 110. In embodiments including a PDL structure 109, the overhang structure 113 is disposed on top of each PDL structure 109. The overhang structures 113 include at least a second structure 113B disposed on a first structure 113A. Each overhang structure 113 includes an overhang 115. The overhang 115 is defined by an extension 117 of the second structure 113B that extends laterally beyond the sidewall of the first structure 113A. Each OLED subpixel 111 includes a cathode 114 disposed on an OLED material 112. A local passivation layer 116 is disposed over the OLED material 112, the cathode 114, and at least a portion of the overhang structure 113 of each OLED subpixel 111. The transparent subpixels 125 have a portion of the sensor 107 or each of the sensors 107 disposed thereunder, either in ( FIG. 2C ) or underneath ( FIG. 2D ) the backplane 102. A global passivation layer 120 is disposed over the subpixel circuit 101 and the sensor opening 103. An intermediate layer 118 is disposed between the overhang grid 110, the local passivation layer 116, and the portion of the backplane 102 corresponding to the sensor opening 103. In some embodiments that can be combined with other embodiments described herein, such as FIG. 2D , a PDL material 109A is disposed between the intermediate layer 118 of the transparent subpixels 125 and the backplane 102. The PDL material 109A is transparent or semi-transparent. The passivation layer 120 and the intermediate layer 118 are transparent or semi-transparent.

[0026] 3A-3C are schematic top cross-sectional views of transparent subpixel configurations 124 of display 100. As shown in FIG. 3A, each subpixel circuit 101 includes a transparent subpixel 125 located above or below an OLED subpixel 111. The transparent subpixel 125 has a width 301 that is the same as the width 302 of all adjacent OLED subpixels 111. As shown in FIGS. 3B and 3C, a first subpixel circuit 303 includes a first transparent subpixel 125A located below the OLED subpixel 111. A second subpixel circuit 305 located below the first subpixel circuit 303 includes a second transparent subpixel 125B located above the OLED subpixel 111. The first transparent subpixel 125A and the second transparent subpixel 125B are directly adjacent without an overhang structure 113 between them to increase transmittance. In some embodiments, at least one sensor 107 is disposed below the transparent subpixel 125. In other embodiments, the sensor 107 is not disposed below the transparent subpixel 125. As shown in Figure 3B, the third transparent subpixel 125C of the third subpixel circuit 307 is adjacent to the first transparent subpixel 125A of the first subpixel circuit 303 with an overhang structure 113 between them, and the fourth transparent subpixel 125D of the fourth subpixel circuit 309 is adjacent to the second transparent subpixel 125B of the second subpixel circuit 305 with an overhang structure 113 between them. As shown in FIG. 3C , the third transparent subpixel 125C of the third subpixel circuit 307 is directly adjacent to the first transparent subpixel 125A of the first subpixel circuit 303 without an overhang structure 113 between them, and the fourth transparent subpixel 125D of the fourth subpixel circuit 309 is adjacent to the second transparent subpixel 125B of the second subpixel circuit 305 without an overhang structure 113 between them, thereby increasing the transmittance.

[0027] Figure 4 is a flow diagram of a method 400 for forming a display 100. Figures 5A-5E are schematic cross-sectional views of a backplane 100 during a method 400 for forming a display 100 having an aperture configuration 100A. Figures 6A-6E are schematic cross-sectional views of a backplane 100 during a method 400 for forming a display 100 having an array configuration 100B or a transparent subpixel configuration 124.

[0028] In step 401, an overhanging grid 110 is formed, as shown in Figures 5A and 6A. Overhanging grids 110 for embodiments of display 100 are described herein. In step 402, OLED material 112, cathode 114, and local passivation layer 116 are deposited, as shown in Figures 5B and 6B. In step 403, resist 502 is formed into subpixels 111, as shown in Figures 5C and 6C. In step 404, the local passivation layer 116 is removed, as shown in Figures 5D and 6D. In step 405, the cathode 114 and OLED material 112 exposed by resist 502 are removed, as shown in Figures 5E and 6E. In step 406, resist 502 is removed, as shown in Figures 2A-2D.

[0029] In summary, the displays described herein include a subpixel circuit, at least one sensor opening adjacent to an overhang structure, and the adjacent subpixel circuit. The at least one sensor opening includes a sensor disposed therebelow. Other display configurations described herein include subpixel circuits including OLED subpixels and transparent subpixels, resulting in a sensor disposed therebelow. The configurations described herein utilize an integrated sensor to eliminate the need for a bezel, reduce display dead zones, and increase display transmittance.

[0030] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the appended claims.

Claims

1. a backplane; a plurality of subpixel circuits separated by an overhanging grid disposed on the backplane, each subpixel circuit having a subpixel surrounded by an overhanging structure of the overhanging grid, each subpixel comprising: an anode connected to a thin film transistor (TFT) of the backplane; and an organic light emitting diode (OLED) material disposed over the anode a plurality of subpixel circuits, each having a a sensor opening, a subpixel circuit surrounding the sensor opening and separated from the sensor opening by the overhanging grid; the sensor opening is surrounded by a respective overhang structure; a sensor opening, wherein a sensor is disposed below the sensor opening, either in or below the backplane; Display including.

2. The display of claim 1 , wherein an intermediate layer is disposed over the backplane at the sensor opening.

3. The display of claim 1 , wherein the overhanging grid comprises a plurality of overhanging structures.

4. 4. The display of claim 3, wherein each overhang structure is defined by an extension of a second structure that extends laterally beyond the first structure.

5. 10. The display of claim 1, wherein the sensor is a complementary metal-oxide semiconductor (CMOS), a charge-coupled device (CCD), a metasurface, a photodiode, or a solar cell.

6. The display of claim 1 , wherein the sensor is a light emitter.

7. 7. The display of claim 6, wherein the light emitters are IR emitters or light emitting diodes (LEDs).

8. The display of claim 1 , wherein a layer of pixel-defining material is disposed on the backplane in the sensor opening.

9. The display of claim 1 , wherein the anode is disposed over the TFT.

10. 2. The display of claim 1, wherein the anode is connected to the TFT via a wire.

11. a backplane; a plurality of subpixel circuits separated by an overhanging grid disposed on the backplane, each subpixel circuit having a subpixel surrounded by an overhanging structure of the overhanging grid, each subpixel comprising: an anode connected to a thin film transistor (TFT) of the backplane; and an organic light emitting diode (OLED) material disposed over the anode a plurality of subpixel circuits, each having a a plurality of sensor arrays, outer sensor arrays of the plurality of sensor arrays adjacent to the subpixel circuits and separated from the subpixel circuits by the overhanging grid, each sensor array having a subpixel opening surrounded by an overhanging structure of the overhanging grid; sensors located either in or under the backplane below the plurality of sensor arrays; Display including.

12. The display of claim 11 , wherein the overhanging grid comprises a plurality of overhanging structures.

13. 13. The display of claim 12, wherein each overhang structure is defined by an extension of a second structure that extends laterally beyond the first structure.

14. 12. The display of claim 11, wherein the sensor is a complementary metal oxide semiconductor (CMOS), a charge coupled device (CCD), a metasurface, a photodiode, or a solar cell.

15. The display of claim 11 , wherein the sensor is a light emitter.

16. 16. The display of claim 15, wherein the light emitters are IR emitters or light emitting diodes (LEDs).

17. The display of claim 11 , wherein the anode is disposed over the TFT.

18. 12. The display of claim 11, wherein the anode is connected to the TFT via a wire.

19. a backplane; an overhanging grid disposed on the backplane, the overhanging grid defining organic light emitting diode (OLED) subpixels and transparent subpixels, each of the OLED subpixels and the transparent subpixels being surrounded by an overhanging structure of the overhanging grid; the OLED subpixels are an anode connected to a thin film transistor (TFT) of the backplane; and OLED material disposed over the anode an overhanging grid having a subpixel circuit including:

20. 20. The sub-pixel circuit of claim 19, wherein the overhanging grid comprises a plurality of overhanging structures.

21. 21. The subpixel circuit of claim 20, wherein each overhang structure is defined by an extension of a second structure that extends laterally beyond the first structure.

22. 22. The subpixel circuit of claim 21, wherein the sensor is a complementary metal-oxide semiconductor (CMOS), a charge-coupled device (CCD), a metasurface, a photodiode, or a solar cell.

23. 20. The sub-pixel circuit of claim 19, wherein the sensor is a light emitter.

24. 24. The subpixel circuit of claim 23, wherein the light emitter is an IR emitter or a light emitting diode (LED).

25. 20. The sub-pixel circuit of claim 19, wherein the anode is disposed above the TFT or the anode is connected to the TFT via a wire.

26. 20. The subpixel circuit of claim 19, wherein the transparent subpixel has a sensor thereunder located either in or below the backplane.

27. depositing an organic light emitting diode (OLED) material on the backplane, wherein an overhanging grid defines subpixel areas and transparent areas; disposing a cathode over the OLED material across the subpixel area and the transparent area; depositing an encapsulation layer over the backplane; forming a resist layer on the backplane in the subpixel area; removing one or more exposed portions of the encapsulation layer; removing one or more exposed portions of the OLED material; removing the resist layer; A method comprising:

28. 28. The method of claim 27, wherein an anode is connected to a thin film transistor (TFT) of the backplane.

29. 28. The method of claim 27, wherein the transparent subpixel has a sensor underneath it located either in or underneath the backplane.

30. 1. A device comprising a backplane and a plurality of overhang structures, wherein adjacent overhang structures of the plurality of overhang structures define at least one subpixel and at least one transparent area, the device comprising: depositing an OLED material on the backplane, the OLED material being disposed over an anode of the at least one subpixel; depositing a cathode, said cathode being disposed over the OLED material of at least one subpixel, and a sensor or light emitter in said at least one transparent area being operable to receive or project light through said backplane and said transparent area; A device fabricated by a process including:

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