Display device and tiling display device

Abstract

According to one embodiment of the present invention, a display device includes a display panel and an anti-reflection layer disposed on the display panel. The anti-reflection layer includes a plurality of inorganic layers, the plurality of inorganic layers including a plurality of first inorganic layers having a first refractive index and each containing silicon oxynitride (SiON), and a plurality of second inorganic layers having a second refractive index higher than the first refractive index and each containing silicon oxynitride. This allows for the formation of an anti-reflection layer structure that has low reflectivity and high capping properties while being formed using a simple process, thereby improving the durability and visibility of the display device.

Description

[Technical Field]

[0001] The present invention relates to a display device and a tiling display device, and more particularly to a display device and a tiling display device with improved durability and visibility. [Background technology]

[0002] Various types of display devices are used to provide image information, and the outer surfaces of such display devices require high surface hardness and impact resistance to protect the display devices from the external environment and ensure reliability even after repeated use.

[0003] Furthermore, when a display device is exposed to external light such as various types of illumination and natural light, the reflected light can prevent the image formed inside from being clearly transmitted to the user, or can cause eye fatigue or headaches in the user. For these reasons, there is an increasing demand for anti-reflection. Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide a display device having an anti-reflection effect.

[0005] The present invention aims to provide a tiling display device with improved visibility by including a unit display device having a low reflection effect and reduced tolerance caused by an anti-reflection structure. [Means for solving the problem]

[0006] According to one embodiment of the present invention, a display device includes a display panel and an anti-reflection layer disposed on the display panel. The anti-reflection layer includes a plurality of inorganic layers, the plurality of inorganic layers including a plurality of first inorganic layers having a first refractive index and each containing silicon oxynitride (SiON), and a plurality of second inorganic layers having a second refractive index higher than the first refractive index and each containing silicon oxynitride. This allows for the formation of an anti-reflection layer structure that has low reflectivity and high capping properties while being formed using a simple process, thereby improving the durability and visibility of the display device.

[0007] The first refractive index may be equal to or greater than 1.50 and less than 1.70 at a wavelength of 550 nm, and the second refractive index may be equal to or greater than 1.70 and less than 1.90 at a wavelength of 550 nm.

[0008] The plurality of first inorganic layers and the plurality of second inorganic layers may be stacked alternately with each other.

[0009] The plurality of first inorganic layers includes a 1-1 inorganic layer and a 1-2 inorganic layer, and the plurality of second inorganic layers includes a 2-1 inorganic layer and a 2-2 inorganic layer, and the 1-1 inorganic layer, the 2-1 inorganic layer, the 1-2 inorganic layer, and the 2-2 inorganic layer may be stacked sequentially.

[0010] The thickness of each of the plurality of first inorganic layers and the plurality of second inorganic layers may be 10 nm or more and 150 nm or less.

[0011] The oxygen content relative to the total content of each of the plurality of first inorganic layers is defined as a first oxygen content, and the oxygen content relative to the total content of each of the plurality of second inorganic layers is defined as a second oxygen content, and the first oxygen content may be greater than the second oxygen content.

[0012] The nitrogen content relative to the total content of each of the plurality of first inorganic layers is defined as a first nitrogen content, and the nitrogen content relative to the total content of each of the plurality of second inorganic layers is defined as a second nitrogen content, and the first nitrogen content may be smaller than the second nitrogen content.

[0013] Each of the plurality of first inorganic layers may contain, relative to the total content of each of the plurality of first inorganic layers, oxygen from 23 at% to 26 at% inclusive, nitrogen from 31 at% to 34 at% inclusive, and silicon from 41 at% to 44 at% inclusive, and each of the plurality of second inorganic layers may contain, relative to the total content of each of the plurality of second inorganic layers, oxygen from 20 at% to 23 at% inclusive, nitrogen from 35 at% to 38 at% inclusive, and silicon from 39 at% to 42 at% inclusive.

[0014] The display device according to an embodiment of the present invention may further include an optical layer disposed between the display panel and the anti-reflection layer, the optical layer including a light control layer disposed on the display panel, and a color filter layer disposed between the light control layer and the anti-reflection layer.

[0015] The display panel may include a plurality of light-emitting elements that generate first light, and the light control layer may include a first light control unit that transmits the first light, a second light control unit that converts the first light into second light having a wavelength different from the first light, and a third light control unit that converts the first light into third light having a wavelength different from the first light and the second light.

[0016] The optical layer may further include an overcoat layer disposed over the color filter layer, and the anti-reflection layer may contact an upper surface of the overcoat layer.

[0017] The overcoat layer may have a refractive index of 1.45 or more and 1.53 or less, and a thickness of 3 μm or more and 10 μm or less.

[0018] The anti-reflection layer may further include a low refractive index layer disposed on the inorganic layers, and an upper surface of the low refractive index layer may define an outermost surface of the anti-reflection layer.

[0019] The refractive index of the low refractive index layer may be 1.3 or more and 1.5 or less.

[0020] The reflectance on the upper surface of the antireflection layer may be 2% or less.

[0021] A display device according to one embodiment of the present invention includes a display panel and an anti-reflection layer disposed on the display panel, the anti-reflection layer including a plurality of inorganic layers, the plurality of inorganic layers including a plurality of first inorganic layers each containing silicon oxynitride and a plurality of second inorganic layers each containing silicon oxynitride, wherein a first oxygen content is defined as an oxygen content relative to a total content of each of the plurality of first inorganic layers, and a second oxygen content is defined as an oxygen content relative to a total content of each of the plurality of second inorganic layers, and the first oxygen content is greater than the second oxygen content.

[0022] The nitrogen content relative to the total content of each of the plurality of first inorganic layers is defined as a first nitrogen content, and the nitrogen content relative to the total content of each of the plurality of second inorganic layers is defined as a second nitrogen content, and the first nitrogen content may be smaller than the second nitrogen content.

[0023] The display device according to an embodiment of the present invention further includes an optical layer disposed between the display panel and the anti-reflection layer, the optical layer including a light control layer disposed on the display panel, a color filter layer disposed between the light control layer and the anti-reflection layer, and an overcoat layer disposed on the color filter layer, and the anti-reflection layer may be disposed directly on the overcoat layer.

[0024] According to an embodiment of the present invention, a tiling display device includes a plurality of unit display devices arranged along at least one direction, each of the plurality of unit display devices including a display panel and an anti-reflection layer disposed on the display panel, the anti-reflection layer including a plurality of inorganic layers, the plurality of inorganic layers including a plurality of first inorganic layers having a first refractive index and containing silicon oxynitride, and a second inorganic layer contacting one of upper and lower surfaces of the first inorganic layers and having a second refractive index higher than the first refractive index and containing silicon oxynitride.

[0025] A side surface of the anti-reflection layer and a side surface of the display panel may define an aligned side surface. [Effects of the Invention]

[0026] According to one embodiment of the present invention, the display device of one embodiment includes a structure in which first inorganic layers and second inorganic layers, each containing an oxynitride but having different refractive indices, are alternately stacked, thereby making it possible to form an anti-reflection layer structure having low reflectivity and high capping properties while being formed through a simple process, thereby improving the visibility and durability of the display device. [Brief explanation of the drawings]

[0027] [Figure 1] 1 is a perspective view of a display device according to an embodiment of the present invention; [Figure 2] 1 is a cross-sectional view of a display device according to an embodiment of the present invention. [Figure 3] 1 is a plan view of a partial area of ​​a display device according to an embodiment of the present invention; [Figure 4a] 1 is a cross-sectional view of a display device according to an embodiment of the present invention. [Figure 4b] 1 is a cross-sectional view of a display device according to an embodiment of the present invention. [Figure 4c] 1 is a cross-sectional view of a display device according to an embodiment of the present invention. [Figure 5a] 1 is a cross-sectional view showing a partial configuration of a display device according to an embodiment of the present invention. [Figure 5b] 1 is a cross-sectional view showing a partial configuration of a display device according to an embodiment of the present invention. [Figure 5c] 1 is a cross-sectional view showing a partial configuration of a display device according to an embodiment of the present invention. [Figure 6a] 1 is a perspective view showing a tiling display device according to an embodiment of the present invention; [Figure 6b] 1 is a perspective view showing a state in which a part of a tiling display device according to an embodiment of the present invention is separated; [Figure 7a] FIG. 2 is a cross-sectional view of a unit display device according to an embodiment. [Figure 7b] FIG. 2 is a cross-sectional view of a unit display device according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0028] As used herein, when a component (or region, layer, portion, etc.) is referred to as being "on" or "coupled" to another component, it means that it may be directly positioned, coupled, or connected to the other component, or that a third component may be disposed therebetween.

[0029] The same reference numerals refer to the same elements. In the drawings, the thickness, proportions, and dimensions of the elements are exaggerated for the purpose of effectively explaining the technical content. "And / or" includes all combinations of one or more elements defined by the associated elements.

[0030] Terms such as "first" and "second" are used to describe various components, but the components are not limited to these terms. These terms are used only to distinguish one component from another. For example, a first component may be called a "second component" without departing from the scope of the present invention, and similarly, a second component may be called a "first component." The singular "a" includes plural expressions unless the context clearly dictates otherwise.

[0031] Furthermore, terms such as "under," "below," "on," and "above" are used to describe the relationship between components shown in the drawings. These terms are relative concepts and are described based on the directions shown in the drawings.

[0032] It should be understood that the terms "comprise" or "have" and the like specify the presence of any feature, number, step, operation, component, part, or combination thereof set forth above in the specification, but do not preclude the presence or possible addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0033] As used herein, "directly disposed" may mean that there is no additional layer, film, region, plate, etc. between one layer, film, region, plate, etc. and another. For example, "directly disposed" may mean that two layers or two components are disposed without the use of an additional member, such as an adhesive member, between them.

[0034] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which the present invention belongs. Furthermore, terms such as those defined in commonly used dictionaries should be interpreted to have a meaning consistent with the meaning they have in the context of the relevant art, and should not be interpreted in an overly ideal or formal sense unless explicitly defined herein.

[0035] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0036] FIG. 1 is a perspective view of a display device according to an embodiment of the present invention.

[0037] 1, the display device DD in one embodiment may be a device activated by an electrical signal. For example, the display device DD may be a large device such as a television, monitor, or external billboard. The display device DD may also be a small or medium-sized device such as a personal computer, laptop computer, personal digital assistant, car navigation unit, game console, smartphone, tablet, or camera. These are merely examples, and the display device DD may be used in other electronic devices without departing from the concept of the present invention.

[0038] The display device DD may display an image IM (or video) via a display surface DD-IS. The display surface DD-IS may be aligned with a plane defined by a first direction DR1 and a second direction DR2. The display surface DD-IS may include a display area DA and a non-display area NDA.

[0039] Pixels PX may be arranged in the display area DA, and pixels PX may not be arranged in the non-display area NDA. The non-display area NDA may be defined along the edge of the display surface DD-IS. The non-display area NDA may surround the display area DA. However, embodiments are not limited thereto, and the non-display area NDA may be omitted or may be arranged only on one side of the display area DA.

[0040] Although the display area DD includes a flat display surface DD-IS in FIG. 1, this is not limiting. The display panel DD may include a curved or three-dimensional display surface. The three-dimensional display surface may include multiple display areas pointing in different directions.

[0041] The thickness direction of the display device DD may be parallel to a third direction DR3, which is a normal direction to a plane defined by the first direction DR1 and the second direction DR2. The directions indicated by the first to third directions DR1, DR2, and DR3 described in this specification are relative concepts and may be converted to other directions.

[0042] In this specification, the upper surface (or front surface) and the lower surface (or rear surface) of a member constituting the display device DD may be defined based on the third direction DR3. More specifically, of two surfaces of a member facing each other based on the third direction DR3, the surface relatively adjacent to the display surface DD-IS may be defined as the front surface (or upper surface), and the surface relatively separated from the display surface DD-IS may be defined as the rear surface (or lower surface). Also, in this specification, the upper and lower may be defined based on the third direction DR3, with the upper surface being defined as the direction approaching the display surface DD-IS and the lower surface being defined as the direction away from the display surface DD-IS.

[0043] 2 is a cross-sectional view of a display device according to an embodiment of the present invention, taken along line II' of FIG.

[0044] 2, the display device DD may include a display panel DP and an optical structure layer PP disposed on the display panel DP. The display panel DP may include a display element layer DP-EL. The display element layer DP-EL includes a light-emitting layer ED.

[0045] The optical structure layer PP is disposed on the display panel DP and can control reflected light from the display panel DP due to external light. The optical structure layer PP can include, for example, a color filter layer and / or an anti-reflection layer. A detailed description of the optical structure layer PP will be given later.

[0046] In one embodiment of the display device DD, the display panel DP may be a light-emitting display panel. For example, the display panel DP may be an LED (light-emitting diode) display panel, an organic electroluminescence display panel, or a quantum dot light-emitting display panel. However, embodiments are not limited thereto. The display panel DP may provide a first color light. For example, the display panel DP may emit blue light as the source light.

[0047] The LED display panel may include light-emitting diodes, the light-emitting layer of the organic electroluminescent display panel may include an organic electroluminescent material, and the light-emitting layer of the quantum dot display panel may include quantum dots or quantum rods, etc. Hereinafter, the display panel DP included in the display device DD according to an embodiment of this specification will be described as an organic electroluminescent display panel, although the embodiment is not limited thereto.

[0048] The display panel DP may include a base substrate BS, a circuit layer DP-CL arranged on the base substrate BS, and a display element layer DP-EL arranged on the circuit layer DP-CL.

[0049] The base substrate BS may be a member that provides a base surface on which the display element layers EP-EL are disposed. The base substrate BS may be a glass substrate, a metal substrate, a plastic substrate, or the like. However, embodiments are not limited thereto, and the base substrate BS may be an inorganic layer, an organic layer, or a composite material layer. The base substrate BS may be a flexible substrate that can be easily bent or folded.

[0050] In one embodiment, the circuit layer DP-CL is disposed on the base substrate BS, and the circuit layer DP-CL may include a plurality of transistors (not shown). Each of the transistors (not shown) may include a control electrode, an input electrode, and an output electrode. For example, the circuit layer DP-CL may include a switching transistor and a driving transistor for driving the light-emitting element ED (FIG. 4a) of the display element layer DP-EL.

[0051] FIG. 3 is a plan view of a partial area of ​​a display device according to an embodiment of the present invention.

[0052] 3, the display panel DD in one embodiment may include a plane including three light-emitting regions PXA-B, PXA-G, and PXA-R and adjacent bank well regions BWA. In one embodiment of the present invention, the three light-emitting regions PXA-B, PXA-G, and PXA-R shown in FIG. 3 may be repeatedly arranged throughout the display area DA (FIG. 1).

[0053] A peripheral region NPXA is disposed around each of the first to third light-emitting regions PXA-B, PXA-G, and PXA-R. The peripheral region NPXA defines a boundary between the first to third light-emitting regions PXA-B, PXA-G, and PXA-R. The peripheral region NPXA may surround the first to third light-emitting regions PXA-B, PXA-G, and PXA-R. A structure, such as a pixel definition layer PDL (see FIG. 4a), that prevents color mixing between the first to third light-emitting regions PXA-B, PXA-G, and PXA-R may be disposed in the peripheral region NPXA.

[0054] While FIG. 3 illustrates the first to third light-emitting regions PXA-B, PXA-G, and PXA-R having the same planar shape but different planar areas, this is not limiting. At least two of the first to third light-emitting regions PXA-B, PXA-G, and PXA-R may have the same area. The areas of the first to third light-emitting regions PXA-B, PXA-G, and PXA-R may be determined according to the light emission color. Of the primary colors, the area of ​​the light-emitting region emitting green light may be the largest, and the area of ​​the light-emitting region emitting blue light may be the smallest. However, embodiments are not limited to the illustration of FIG. 3 , and the areas of the first to third light-emitting regions PXA-B, PXA-G, and PXA-R may be variously modified.

[0055] 3 shows the first to third light-emitting regions PXA-B, PXA-G, and PXA-R as rectangular, but this is not limiting. In plan view, the first to third light-emitting regions PXA-B, PXA-G, and PXA-R may have other polygonal shapes (including substantially polygonal shapes) such as a diamond or pentagon. In one embodiment, the first to third light-emitting regions PXA-B, PXA-G, and PXA-R may have rectangular shapes (substantially rectangular shapes) with rounded corners in plan view.

[0056] 3, the second light-emitting region PXA-G is arranged in the first row, and the first light-emitting region PXA-B and the third light-emitting region PXA-R are arranged in the second row, but the arrangement of the first light-emitting region PXA-B, PXA-G, and PXA-R may be changed in various ways. For example, the first light-emitting region PXA-B, PXA-G, and PXA-R may be arranged in the same row.

[0057] A bank well region BWA may be defined in the display region DA (FIG. 1). The bank well region BWA may be a region where a bank well is formed to prevent defects due to mis-landing during a patterning process of a plurality of light control units CCP-B, CCP-G, and CCP-R (FIG. 4a) included in the light control layer CCL (FIG. 4a). That is, the bank well region BWA may be a region where a bank well is defined by removing a portion of the partition wall portion BK (FIG. 4a).

[0058] Although FIG. 3 exemplarily shows two bank well regions BWA defined adjacent to the second light emitting region PXA-G, the shape and arrangement of the bank well regions BWA may be variously changed.

[0059] 4a to 4c are cross-sectional views of a display device according to an embodiment of the present invention, taken along the line II-II' in FIG.

[0060] 3 and 4a to 4c show three light-emitting regions PXA-B, PXA-G, and PXA-R that respectively emit blue light, green light, and red light. For example, the display devices DD and DD-1 of the embodiment may include a blue light-emitting region PXA-B, a green light-emitting region PXA-G, and a red light-emitting region PXA-R that are separated from each other.

[0061] Referring to Figures 4a to 4c, in one embodiment, the display devices DD, DD-1, and DD-2 may include a display panel DP including a light-emitting element ED, and optical structures PP, PP-1, and PP-2 arranged on the display panel DP.

[0062] The display panel DP may include a base substrate BS, a circuit layer DP-CL disposed on the base substrate BS, and a display element layer DP-EL. The display element layer DP-EL may include a pixel defining film PDL, a light-emitting element ED disposed between the pixel defining films PDL or on the pixel defining film PDL, and a sealing layer TFE disposed on the light-emitting element ED.

[0063] The display element layer DP-EL may include a pixel defining layer PDL. Each of the light-emitting regions PXA-B, PXA-G, and PXA-R may be separated by the pixel defining layer PDL. The peripheral region NPXA may be a region between adjacent light-emitting regions PXA-B, PXA-G, and PXA-R and correspond to the pixel defining layer PDL. Meanwhile, in this specification, each of the light-emitting regions PXA-B, PXA-G, and PXA-R may correspond to a pixel. As shown in FIG. 4a, organic layers such as the light-emitting layer EML included in the light-emitting element ED may be provided as a common layer overlapping the light-emitting regions PXA-B, PXA-G, and PXA-R and the peripheral region NPXA. Although not shown, the light-emitting layer EML of the light-emitting element ED may be separated by being disposed in an opening OH defined by the pixel defining layer PDL.

[0064] The pixel defining layer PDL may be made of a polymer resin. For example, the pixel defining layer PDL may be formed to include a polyacrylate resin or a polyimide resin. The pixel defining layer PDL may also be formed to include an inorganic material in addition to the polymer resin. Meanwhile, the pixel defining layer PDL may be formed to include a light absorbing material or a black pigment or a black dye. A pixel defining layer PDL formed to include a black pigment or a black dye may implement a black pixel defining layer. When forming the pixel defining layer PDL, carbon black or the like may be used as the black pigment or black dye, but embodiments are not limited thereto.

[0065] The pixel definition layer PDL may be made of an inorganic material. For example, the pixel definition layer PDL may be made of silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiO x N y ) and the like. The pixel defining layer PDL may define the emitting regions PXA-B, PXA-G, and PXA-R. The emitting regions PXA-B, PXA-G, and PXA-R may be separated from the peripheral region NPXA by the pixel defining layer PDL.

[0066] 4a and 4b, the display element layer DP-EL may include a light-emitting element ED, a portion of which is disposed on the pixel defining layer PDL. According to an embodiment, the display device DD includes the light-emitting element ED, and the light-emitting element ED may include an emitting layer EML. According to an embodiment, the light-emitting element ED includes a first electrode EL1, a second electrode EL2 facing the first electrode EL1, and a plurality of functional layers, including the emitting layer EML, disposed between the first electrode EL1 and the second electrode EL2.

[0067] The functional layers may include a hole transport region HTR disposed between the first electrode EL1 and the emitting layer EML, and an electron transport region ETR disposed between the emitting layer EML and the second electrode EL2. Although not shown, in one embodiment, a device capping layer may be further disposed on the second electrode EL2.

[0068] The hole transport region HTR and the electron transport region ETR may each include multiple sub-functional layers. For example, the hole transport region HTR may include a hole injection layer and a hole transport layer as sub-functional layers, and the electron transport region ETR may include an electron injection layer and an electron transport layer as sub-functional layers. However, embodiments are not limited thereto. The hole transport region HTR may further include an electron blocking layer as a sub-functional layer, and the electron transport region ETR may further include a hole blocking layer as a sub-functional layer.

[0069] The first electrode EL1 is conductive. The first electrode EL1 may be made of a metal alloy or a conductive compound. The first electrode EL1 may be an anode. The first electrode EL1 may be a pixel electrode. The first electrode EL1 may be a reflective electrode. However, embodiments are not limited thereto, and the first electrode EL1 may be a transmissive electrode or a semi-transmissive electrode. If the first electrode EL1 is a semi-transmissive electrode or a reflective electrode, the first electrode EL1 may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, or a compound or mixture thereof (e.g., a mixture of Ag and Mg). Alternatively, the first electrode EL1 may have a multi-layer structure including a reflective film or semi-transmissive film made of the above-mentioned materials and a transparent conductive film made of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), or the like. For example, the first electrode EL1 may be a multi-layer metal film, and may have a structure in which metal films of ITO / Ag / ITO are stacked.

[0070] The hole transport region HTR is provided on the first electrode EL1. The hole transport region HTR may include a hole injection layer (not shown) and a hole transport layer (not shown). The hole transport region HTR may have a single layer made of a single material, a single layer made of multiple different materials, or a multilayer structure having multiple layers made of multiple different materials.

[0071] The hole transport region HTR can be formed using various methods such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) method, inkjet printing, laser printing, laser induced thermal imaging (LITI), etc.

[0072] The hole transport region HTR may include, for example, a carbazole derivative such as N-phenylcarbazole or poly(vinylcarbazole), a fluorene derivative, a triphenylamine derivative such as TPD (N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine), TCTA (4,4',4"-tris(N-carbazolyl)triphenylamine), NPD (N,N'-di(naphthalen-1-yl)-N,N'-diphenyl-benzidine), TAPC (4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine]), HMTPD (4,4'-bis[N,N'-(3-tolyl)amino]-3,3'-dimethylbiphenyl), or mCP (1,3-bis(N-carbazolyl)benzene).

[0073] The thickness of the hole transport region HTR may be about 5 nm to about 1,500 nm, for example, about 10 nm to about 500 nm. If the thickness of the hole transport region HTR satisfies the above-mentioned range, satisfactory hole transport characteristics can be obtained without a substantial increase in driving voltage.

[0074] The emitting layer EML is provided on the hole transport region HTR. The emitting layer EML may include a host and a dopant. In one embodiment, the emitting layer EML may include an organic light-emitting material as a dopant material. Alternatively, the emitting layer EML may include quantum dots as a dopant material. In one embodiment, the emitting layer EML may further include an organic host material in addition to the dopant material. In one embodiment of the display panel DP, the emitting layer EML included in the light-emitting element ED may emit blue light having a center wavelength of 420 nm to 480 nm.

[0075] In one embodiment of the light-emitting element ED, the electron transport region ETR is provided on the light-emitting layer EML. The electron transport region ETR may include at least one of an electron transport layer (not shown) and an electron injection layer (not shown), but the embodiment is not limited thereto.

[0076] The electron transport region ETR may have a single layer made of a single material, a single layer made of multiple different materials, or a multilayer structure having multiple layers made of multiple different materials. For example, the electron transport region ETR may have a single layer structure of an electron injection layer or an electron transport layer, or a single layer structure made of an electron injection material and an electron transport material. The thickness of the electron transport region ETR may be, for example, about 20 nm to about 150 nm.

[0077] The electron transport region ETR can be formed using various methods such as vacuum deposition, spin coating, casting, LB method, inkjet printing, laser printing, laser thermal transfer (LITI), and the like.

[0078] The electron transport region ETR may be formed from, for example, anthracene-based compounds, Alq3 (tris(8-hydroxyquinolinato)aluminum), 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, 2,4,6-tris(3'-(pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine, DPEPO (bis([2-(diphenylphosphino)phenyl]etheroxide), 2-(4-(N-phenylbenzimidazolyl-1-yl)-2-methyl-2-phenyl)-1,3,5-triazine, ... The electron transport group ETR may include a metal halide such as LiF, NaCl, CsF, RbCl, or RbI, a lanthanum group metal such as Yb, a metal oxide such as LiO or BaO, or Liq (lithium quinolinate).

[0079] The second electrode EL2 may be provided on the electron transport region ETR. The second electrode EL2 may be a common electrode or a negative electrode. The second electrode EL2 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode. If the second electrode EL2 is a transmissive electrode, it may be made of a transparent metal oxide, such as ITO, IZO, ZnO, or ITZO. If the second electrode EL2 is a semi-transmissive electrode or a reflective electrode, it may contain Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, Yb, or a compound or mixture containing these. Alternatively, the second electrode EL2 may have a multi-layer structure including a reflective film or semi-transmissive film made of the above material and a transparent conductive film made of ITO, IZO, ZnO, or ITZO.

[0080] Although not shown, the second electrode EL2 may be connected to an auxiliary electrode, and if the second electrode EL2 is connected to the auxiliary electrode, the resistance of the second electrode EL2 may be reduced.

[0081] 3 to 4a, in the display device DD according to one embodiment, the light-emitting regions PXA-B, PXA-G, and PXA-R may have different areas. In this specification, the term "area" may refer to the area when viewed from a plane defined by a first direction DR1 and a second direction DR2. That is, the light-emitting regions PXA-B, PXA-G, and PXA-R may have different surface areas depending on the color they emit. In this case, the term "area" may refer to the area when viewed from a plane defined by the first direction DR1 and the second direction DR2. For example, in the display module DD according to one embodiment, the blue light-emitting region PXA-B emitting blue light may have the smallest surface area, and the green light-emitting region PXA-G generating green light may have the largest surface area. However, embodiments are not limited thereto. The light-emitting regions PXA-B, PXA-G, and PXA-R may emit light of colors other than blue, green, and red. Alternatively, the light-emitting regions PXA-B, PXA-G, and PXA-R may have the same area or may have area ratios different from those shown in FIG. 3. The light-emitting regions PXA-B, PXA-G, and PXA-R may have various polygonal or circular shapes different from those shown in FIG. 3, and the arrangement of the light-emitting regions is not limited thereto. For example, in one embodiment, the light-emitting regions PXA-B, PXA-G, and PXA-R may have a PENTILE® arrangement or a Diamond Pixel® arrangement. PENTILE® and Diamond Pixel® are official registered trademarks of Samsung Display Co., Ltd.

[0082] 4a and 4b, the encapsulation layer TFE may be disposed on the light-emitting element ED to cover the light-emitting element ED. The encapsulation layer TFE may be formed by stacking one or more layers. The encapsulation layer TFE may be a thin film encapsulation layer. The encapsulation layer TFE protects the light-emitting element ED. The encapsulation layer TFE may cover the top surface of the second electrode EL2 disposed in the opening OH and fill the opening OH.

[0083] 4a and 4b, the display devices DD and DD-1 according to an embodiment may include optical structure layers PP and PP-1. The optical structure layers PP and PP-1 may have a function of changing the wavelength of at least a portion of light provided from the display panel DP or preventing interference between adjacent light-emitting regions. The optical structure layers PP and PP-1 may also block external light provided to the display panel DP from outside the display devices DD and DD-1. The optical structure layers PP and PP-1 may also have an anti-reflection function that minimizes reflections caused by external light.

[0084] Referring to FIG. 4a, the display device DD in one embodiment may include a light control layer CCL disposed above the display panel DP.

[0085] The light control layer CCL may include a light converter. The light converter may be a quantum dot, a phosphor, or the like. The light converter may convert the wavelength of light provided thereto and emit light having the converted wavelength. That is, the light control layer CCL may be at least partially a layer containing quantum dots or a layer containing a phosphor.

[0086] The light control layer CCL may be disposed on the display panel DP with a capping layer CPL sandwiched therebetween. The color conversion layer CCL may include a plurality of partition walls BK spaced apart from one another and color control units CCP-B, CCP-G, and CCP-R disposed between the partition walls BK. The partition walls BK may be formed containing a polymer resin and a liquid-repellent additive. The partition walls BK may be formed containing a light-absorbing material, or may be formed containing a pigment or a dye. For example, the partition walls BK may be formed containing a black pigment or a black dye to implement black partition walls. When forming the black partition walls, carbon black or the like may be used as the black pigment or black dye, but the embodiment is not limited thereto.

[0087] The light control layer CCL may include a first light control unit CCP-B that transmits a first light, which is source light provided from the light-emitting element ED, a second light control unit CCP-B that converts the first light into a second light, and a third light control unit CCP-R that converts the second light into a third light. The second light may be light in a wavelength region longer than the first light, and the third light may be light in a wavelength region longer than the first and second lights. For example, the first light may be light having an emission wavelength of 410 nm to 480 nm, the second light may be light having an emission wavelength of 500 nm to 600 nm, and the third light may be light having an emission wavelength of 620 nm to 700 nm. The first light may be blue light, the second light may be green light, and the third light may be red light.

[0088] The second light controller CCP-G and the third light controller CCP-R may each include a light emitter. The light emitter may be a particle that converts the wavelength of incident light to emit light of another wavelength. In one embodiment, the light emitters included in the second light controller CCP-G and the third light controller CCP-R may be quantum dots or phosphors. The second light controller CCP-G may include a first quantum dot QD1 that converts first light into second light, and the third light controller CCP-R may include a second quantum dot QD2 that converts first light into third light. The first light controller CCP-B is a transmission unit that transmits the first light without changing its wavelength and may not include a separate light emitter. However, the first light controller CCP-B may include a light emitter such as a quantum dot that converts light incident on the first light controller CCP-B into the first light.

[0089] The quantum dots may be selected from group II-VI compounds, group I-II-VI compounds, group II-IV-VI compounds, group I-II-IV-VI compounds, group III-VI compounds, group I-III-VI, group III-V compounds, group III-II-V compounds, group II-IV-V compounds, group IV-VI compounds, group IV elements, group IV compounds, and combinations thereof.

[0090] The II-VI compounds include binary compounds selected from the group consisting of CdSe, CdTe, CdS, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, C The group may be selected from the group consisting of ternary compounds selected from the group consisting of dHgTe, HgZnS, HeZnSe, HeZnTe, MgZnSe, MgZnS, and mixtures thereof, and quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and mixtures thereof. Meanwhile, the II-VI compound may further contain a group I metal and / or a group IV element. The group I-II-VI compound may be selected from CuSnS or CuZnS, and the group II-IV-VI compound may be selected from ZnSnS, etc. The group I-II-IV-VI compound may be selected from quaternary compounds selected from the group consisting of CuZnSnS, CuZnSnS, CuZnSnSe, AgZnSnS, and mixtures thereof.

[0091] III-VI compounds may include binary compounds such as In2S3, In2Se3, etc., ternary compounds such as InGaS3, InGaSe3, etc., or any combination thereof.

[0092] The I-III-VI compound may be selected from ternary compounds selected from the group consisting of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2 and mixtures thereof, or quaternary compounds such as AgInGaS2, CuInGaS2.

[0093] The III-V compound may be selected from the group consisting of binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof, ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNPs, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNPs, InNAs, InNSb, InPAs, InPSb, and mixtures thereof, and quaternary compounds selected from the group consisting of GaAlNPs, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNPs, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNPs, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof, while the III-V compound may further comprise a group II metal. For example, InZnP may be selected as the III-II-V compound.

[0094] The II-IV-V compound may be a ternary compound selected from the group consisting of ZnSnP, ZnSnP2, ZnSnAs2, ZnGeP2, ZnGeAs2, CdSnP2, and CdGeP2, and mixtures thereof.

[0095] The IV-VI compound may be selected from the group consisting of binary compounds selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. The Group IV element may be selected from the group consisting of Si, Ge, and mixtures thereof. The Group IV compound may be a binary compound selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0096] The elements contained in the multi-compounds such as the binary, ternary, and quaternary compounds may be present in the particles at uniform or non-uniform concentrations. That is, the chemical formula indicates the types of elements contained in the compound, and the ratio of elements within the compound may vary. For example, AgInGaS2 is AgIn x Ga 1-x It can mean S2 (X is a real number between 0 and 1).

[0097] In this case, the binary, ternary, or quaternary compound may be present in a particle at a uniform concentration or may be present in the same particle with partially different concentration distributions. The binary, ternary, or quaternary compound may have a core / shell structure in which one quantum dot surrounds another quantum dot. In the core / shell structure, the binary, ternary, or quaternary compound may have a concentration gradient in which the concentration of an element present in the shell decreases toward the core.

[0098] In some embodiments, quantum dots may have a core-shell structure, including a core containing the nanocrystals described above and a shell surrounding the core. The shell of the quantum dot may serve as a protective layer to prevent chemical modification of the core and maintain its semiconducting properties, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell may be a single layer or multiple layers. Examples of shells include metal or nonmetal oxides, semiconductor compounds, or combinations thereof.

[0099] The shell may comprise a different material than the core. For example, the core may comprise a first semiconductor nanocrystal and the shell may comprise a second semiconductor nanocrystal that is different from the first semiconductor nanocrystal. Alternatively, the shell may comprise a metal or non-metal oxide. The shell may comprise a metal or non-metal oxide, a semiconductor nanocrystal, or a combination thereof.

[0100] The shell may be made of a single material, but may also be formed to have a concentration gradient. For example, the shell may have a concentration gradient in which the concentration of the second semiconductor nanocrystals in the shell decreases and the concentration of the first semiconductor nanocrystals in the core increases as the shell approaches the core. Alternatively, the shell may have a multi-layer structure containing different materials.

[0101] For example, the metal or non-metal oxide may be a binary compound such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, or NiO, or a ternary compound such as MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4, but the present invention is not limited thereto.

[0102] Examples of the semiconductor compound include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, and AlSb, but the present invention is not limited thereto.

[0103] The quantum dots may have an emission wavelength spectrum full width at half maximum (FWHM) of about 45 nm or less, preferably about 40 nm or less, and more preferably about 30 nm or less, which can improve color purity and color reproducibility. Furthermore, since light emitted through such quantum dots is emitted in all directions, the light viewing angle can be improved.

[0104] The shape of the quantum dots is not particularly limited and may be any shape commonly used in the art. More specifically, shapes such as spherical, pyramidal, multi-arm, and cubic nanoparticles, nanotubes, nanowires, nanofibers, and nanoplate-like particles may be used.

[0105] The energy band gap of quantum dots can be adjusted by adjusting the size of the quantum dots or the element ratio within the quantum dot compound, thereby enabling light of various wavelengths to be obtained from the quantum dot light-emitting layer. Therefore, by using quantum dots of different sizes or different element ratios within the quantum dot compound, light-emitting devices emitting light of various wavelengths can be realized. Specifically, the size of the quantum dots or the element ratio within the quantum dot compound can be selected to emit red, green, and / or blue light. Furthermore, the quantum dots can be realized to emit white light by combining light of various colors. Meanwhile, if quantum dots have various emission colors, such as blue, red, and green, quantum dots with different emission colors may have different core materials.

[0106] Quantum dots can adjust the hue of light they emit depending on their particle size, and can therefore emit a variety of hues, including blue, red, and green. The smaller the particle size of quantum dots, the shorter the wavelength of light they emit. For example, the particle size of quantum dots that emit green light may be smaller than that of quantum dots that emit red light, and the particle size of quantum dots that emit blue light may be smaller than that of quantum dots that emit green light.

[0107] Each of the multiple light control units CCP-B, CCP-G, and CCP-R included in the light control layer CCL may further include a scatterer SP. The first light control unit CCP-B may include only a scatterer SP, the second light control unit CCP-G may include a first quantum dot QD1 and a scatterer SP, and the third light control unit CCP-R may include a second quantum dot QD2 and a scatterer SP.

[0108] The scatterers SP may be inorganic particles. For example, the scatterers SP may contain at least one of TiO2, ZnO, Al2O3, SiO2, and hollow silica. The scatterers SP may contain at least one of TiO2, ZnO, Al2O3, SiO2, and hollow silica, or may be a mixture of two or more substances selected from TiO2, ZnO, Al2O3, SiO2, and hollow silica.

[0109] The first light controller CCP-B, the second light controller CCP-G, and the third light controller CCP-R may each include a base resin BR1, BR2, or BR3 in which quantum dots QD1 and QD2 and scatterers SP are dispersed. In one embodiment, the first light controller CCP-B may include scatterers SP dispersed in the first base resin BR1, the second light controller CCP-G may include first quantum dots QD1 and scatterers SP dispersed in the second base resin BR2, and the third light controller CCP-R may include second quantum dots QD2 and scatterers SP dispersed in the third base resin BR3. The base resins BR1, BR2, and BR3 are media in which the quantum dots QD1 and QD2 and scatterers SP are dispersed and may be composed of various resin compositions commonly referred to as binders. For example, the base resins BR1, BR2, and BR3 may be acrylic resins, urethane resins, silicone resins, epoxy resins, etc. The base resins BR1, BR2, and BR3 may be transparent resins. In one embodiment, the first base resin BR1, the second base resin BR2, and the third base resin BR3 may be the same or different from each other.

[0110] The light control unit CCL may further include a capping layer CPL. The capping layer CPL may be disposed on the light control units CCP-B, CCP-G, and CCP-R and the partition unit BK. The capping layer CPL may serve to prevent penetration of moisture and / or oxygen (hereinafter referred to as "moisture / oxygen"). The capping layer CPL may be disposed on the light control units CCP-B, CCP-G, and CCP-R and may prevent the light control units CCP-B, CCP-G, and CCP-R from being exposed to moisture / oxygen. The capping layer CPL may include at least one inorganic layer.

[0111] In the display device DD of one embodiment, the optical layer OPL may include an overcoat layer OC and a color filter layer CFL.

[0112] The color filter layer CFL may include a color filter CF. The color filter layer CFL may include a first color filter CF-R that transmits a portion of the source light (first light), a second color filter CF-G that transmits the second light, and a third color filter CF-R that transmits the third light. Alternatively, the color filter layer CFL may include a first color filter CF-B that transmits blue light, a second color filter CF-G that transmits green light, and a third color filter CF-R that transmits red light. In one embodiment, the first color filter CF-B may be a blue filter, the second color filter CF-G may be a green filter, and the third color filter CF-R may be a red filter.

[0113] Each color filter CF includes a polymer photosensitive resin and a colorant. The first color filter CF-B may include a blue colorant, the second color filter CF-G may include a green colorant, and the third color filter CF-R may include a red colorant. The first filter CF-B may include a blue pigment or a blue dye, the second filter CF-G may include a green pigment or a green dye, and the third filter CF-R may include a red pigment or a red dye.

[0114] The first to third color filters CF-B, CF-G, and CF-R may be arranged corresponding to the first light-emitting region PXA-B, the second light-emitting region PXA-G, and the third light-emitting region PXA-R, respectively. Also, the first to third color filters CF-B, CF-G, and CF-R may be arranged corresponding to the first to third light controllers CCP-B, CCP-G, and CCP-R, respectively.

[0115] In addition, a plurality of color filters CF-B, CF-G, and CF-R that transmit different light may be overlapped and disposed in correspondence with the peripheral region NPXA disposed between the light-emitting regions PXA-B, PXA-G, and PXA-R. The plurality of color filters CF-B, CF-G, and CF-R may be overlapped and disposed in the third direction DR3, which is the thickness direction, to distinguish the boundaries between the adjacent light-emitting regions PXA-B, PXA-G, and PXA-R. This increases the external light blocking effect and provides a function similar to that of a black matrix. The overlapping structure of the plurality of color filters CF-B, CF-G, and CF-R may provide a function of preventing color mixing.

[0116] Meanwhile, unlike the illustration, the color filter layer CFL may include a light-shielding portion to separate the boundaries between adjacent color filters CF-B, CF-G, and CF-R. The light-shielding portion may be formed of a blue filter, or may be formed of an organic or inorganic light-shielding material including a black pigment or black dye.

[0117] However, the embodiment is not limited thereto, and the first color filter CF-B may not contain a pigment or dye. The first color filter CF-B may contain a polymer photosensitive resin and not contain a pigment or dye. The first color filter CF-B may be transparent. The first color filter CF-B may be made of a transparent photosensitive resin.

[0118] The color filter layer CFL may further include a buffer layer BFL. For example, the buffer layer BFL may be a protective layer that protects the filters CF-B, CF-G, and CF-R. The buffer layer BFL may be an inorganic layer containing at least one inorganic material selected from the group consisting of silicon nitride, silicon oxide, and silicon oxynitride. The buffer layer BFL may be composed of a single layer or multiple layers.

[0119] 4a, the first color filter CF-B of the color filter layer CFL is shown overlapping with the second color filter CF-G and the third color filter CF-R, but the embodiment is not limited thereto. For example, the first to third color filters CF-B, CF-G, and CF-R may be separated by light-shielding portions and may not overlap with each other. Meanwhile, in one embodiment, the first to third color filters CF-B, CF-G, and CF-R may be arranged corresponding to the blue light-emitting region PXA-B, the green light-emitting region PXA-G, and the red light-emitting region PXA-R, respectively.

[0120] Although not shown, the optical layer OPL of the display device DD according to an embodiment may further include a polarizing layer (not shown). The polarizing layer may block external light provided to the display panel DP from the outside. The polarizing layer may block a portion of the external light. If the display device DD includes the polarizing layer, the color filter layer CFL may be omitted.

[0121] The polarizing layer may also reduce reflected light generated from the display panel DP due to external light. For example, the polarizing layer may function to block reflected light that occurs when light provided from outside the display device DD is incident on the display panel DP and then further exits. The polarizing layer may be a circular polarizer with an anti-reflection function, or the polarizing layer may include a linear polarizer and a λ / 4 phase retarder. Meanwhile, the polarizing layer may be disposed on and exposed to the overcoat layer OC, or the polarizing layer may be disposed below the overcoat layer OC.

[0122] An overcoat layer OC may be disposed on the color filter layer CFL. The overcoat layer OC may include an organic layer. The overcoat layer OC may include an organic material with high strength and planarization properties. The overcoat layer OC may provide a flat upper surface. Alternatively, the overcoat layer OC may function as an upper base layer that provides a reference surface on the color filter layer CFL. The overcoat layer OC may be a member that provides a base surface on which the underlying optical layer OPL and light control layer CCL are disposed. The overcoat layer OC may be an inorganic layer, an organic layer, or a composite material layer. However, embodiments are not limited thereto, and the overcoat layer OC may be a glass substrate, a metal substrate, a plastic substrate, or the like.

[0123] An antireflection layer ARL is disposed on the overcoat layer OC. The antireflection layer ARL may be disposed directly on the overcoat layer OC. That is, the antireflection layer ARL may be in contact with the upper surface of the overcoat layer OC. The antireflection layer ARL may have a low reflectance and block external light. The antireflection layer ARL may have multiple layers with different refractive indices and effectively block external light through destructive interference. The reflectance at the upper surface of the antireflection layer ARL may be 2% or less. In the visible light range of 430 nm to 780 nm, the reflectance at the upper surface of the antireflection layer ARL may be 2% or less. At a wavelength of 550 nm, the reflectance at the upper surface of the antireflection layer ARL may be 2% or less.

[0124] 4b, a display device DD-1 according to one embodiment may include a display panel DP and an optical structure layer PP-1 disposed on the display panel DP. In the display device DD-1 according to the embodiment, the optical structure layer PP-1 includes an optical layer OPL-1 disposed on the display panel DP and an anti-reflection layer ARL disposed on the optical layer OPL-1. The optical layer OPL-1 may include an optical control layer CCL-1, a color filter layer CFL-1, and an overcoat layer OC-1, which are stacked in sequence.

[0125] The light control layer CCL-1 may be disposed on the display panel DP with a capping layer CPL sandwiched therebetween. The light control layer CCL-1 may include a plurality of partition walls BK-1 and light control units CCP-B, CCP-G, and CCP-R provided between the partition walls BK-1.

[0126] The color filter layer CFL-1 may include a color filter portion CF-1 including a plurality of filters CF-B, CF-G, and CF-R, a light-shielding portion BM, and a buffer layer BFL.

[0127] Compared to the display device DD shown in FIG. 4a, the display device DD-1 according to one embodiment shown in FIG. 4b is an embodiment in which the light control layer CCL-1 and the color filter layer CFL-1 are disposed with the upper surface of the encapsulation layer TFE as a base surface. That is, the light control parts CCP-R, CCP-G, and CCP-B of the light control layer CCL-1 may be disposed on the display panel DP in a continuous process, and the filters CF-B, CF-G, and CF-R of the color filter layer CFL-1 may be sequentially formed on the light control layer CCL-1 in a continuous process. The light control layer CCL-1 is formed with the upper surface of the capping layer CPL disposed on the display panel DP as a base surface, and may have a shape that is upside down compared to the shape of the light control layer CCL shown in FIG. 4a. Specifically, the plurality of partition parts BK-1 and the plurality of light control parts CCP-B1, CCP-G1, and CCP-R1 may each have a shape that is upside down compared to the shape shown in FIG. 4a. The color filter layer CFL-1 is formed using the upper surface of the light control layer CCL-1 as a base surface, and may have a shape different from that shown in FIG. 4a.

[0128] In one embodiment of the color filter layer CFL-1, the light-shielding portion BM may be a black matrix. The light-shielding portion BM may be formed using an organic or inorganic light-shielding material containing a black pigment or black dye. The light-shielding portion BM may prevent light leakage and distinguish the boundaries between adjacent color filters CF-B, CF-G, and CF-R.

[0129] Referring to FIG. 4c, the display panel DP included in the display device DD-2 according to an embodiment includes a light emitting device ED-1, which may be a micro LED or a nano LED. The light emitting device ED-1 may be electrically connected to the contact portion SC, and the length and width of the light emitting device ED-1 may be between several hundred nanometers and several hundred micrometers. The light emitting device ED-1 may be an LED device including an active layer and at least one semiconductor material layer. The light emitting device ED-1 may further include an insulating layer. The light emitting device ED-1 may be patterned and disposed to overlap the light emitting regions PXA-B, PXA-G, and PXA-R. The display panel DP may include a buffer layer BFL disposed on the light emitting device ED-1. The buffer layer BFL may be disposed on the light emitting device ED-1 to cover it.

[0130] Compared to the display devices DD and DD-1 shown in FIGS. 4a and 4b, the display device DD-2 shown in FIG. 4c does not include a light control layer or a color filter layer in the optical structure layer PP-2. That is, the display device DD-2 of the present embodiment includes an overcoat layer OC-2 disposed on the buffer layer BFL, and an anti-reflection layer ARL may be disposed on the overcoat layer OC-2. The overcoat layer OC-2 may include an organic layer. The overcoat layer OC-2 may include an organic material with high strength and planarization properties. The overcoat layer OC-2 provides a flat upper surface and can serve as a reference surface on which the anti-reflection layer ARL is disposed. The overcoat layer OC-2 may be an inorganic layer, an organic layer, or a composite material layer. However, embodiments are not limited thereto, and the overcoat layer OC-2 may be a glass substrate, a metal substrate, a plastic substrate, or the like. Meanwhile, in the display device DD-2 shown in FIG. 4c, either the buffer layer BFL or the overcoat layer OC-2 may be omitted.

[0131] 5a to 5c are cross-sectional views showing a partial configuration of a display device according to one embodiment of the present invention. Each of Figs. 5a to 5c shows a simplified structure in which a color filter layer CFL, an overcoat layer OC, and antireflection layers ARL, ARL-1, and ARL-2 are stacked. The antireflection layers ARL, ARL-1, and ARL-2 of the present invention will be described in more detail below with reference to Figs. 5a to 5c.

[0132] 4a to 5a, the antireflection layer ARL is disposed on the overcoat layer OC and includes a plurality of layers. The antireflection layer ARL may include a plurality of inorganic layers IL1 and IL2 disposed on the overcoat layer OC.

[0133] The inorganic layers IL1 and IL2 include at least one first inorganic layer IL1 and at least one second inorganic layer IL2. Each of the first inorganic layer IL1 and the second inorganic layer IL2 may be provided with multiple layers. As shown in FIG. 5a, the first inorganic layer IL1 may include a first inorganic layer IL1-1 and a second inorganic layer IL1-2. The second inorganic layer IL2 may include a second inorganic layer IL2-1 and a second inorganic layer IL2-2.

[0134] The first inorganic layer IL1 and the second inorganic layer IL2, each of which is provided as a plurality of layers, may be provided alternately. That is, any two of the plurality of first inorganic layers IL1 may not be stacked consecutively, and any one of the second inorganic layers IL2 may be disposed between the plurality of first inorganic layers IL1. Also, any two of the plurality of second inorganic layers IL2 may not be stacked consecutively, and any one of the first inorganic layers IL1 may be disposed between the plurality of second inorganic layers IL2.

[0135] As shown in FIG. 5a, the 2-1 inorganic layer IL2-1 may be disposed on the 1-1 inorganic layer IL1-1, the 1-2 inorganic layer IL1-2 may be disposed on the 2-1 inorganic layer IL2-1, and the 2-2 inorganic layer IL2-2 may be disposed on the 1-2 inorganic layer IL1-2. The 1-1 inorganic layer IL1-1, the 2-1 inorganic layer IL2-1, the 1-2 inorganic layer IL1-2, and the 2-2 inorganic layer IL2-2 may be sequentially stacked. That is, the 2-1 inorganic layer IL2-1 may be disposed directly on the 1-1 inorganic layer IL1-1, the 1-2 inorganic layer IL1-2 may be disposed directly on the 2-1 inorganic layer IL2-1, and the 2-2 inorganic layer IL2-2 may be disposed directly on the 1-2 inorganic layer IL1-2. The lowest inorganic layer of the inorganic layers IL1 and IL2 may be disposed directly on the overcoat layer OC. 5a exemplarily shows that the 1-1 inorganic layer IL1-1 included in the first inorganic layer IL1 of the multiple inorganic layers IL1 and IL2 is disposed directly on the overcoat layer OC, but this is not limiting, and a layer included in the second inorganic layer IL2 may be disposed directly on the overcoat layer OC. For example, the 2-1 inorganic layer IL2-1 may be disposed directly on the overcoat layer OC, and the 1-1 inorganic layer IL1-1 may be disposed directly on the 2-1 inorganic layer IL2-1.

[0136] The first inorganic layer IL1 has a first refractive index, and the second inorganic layer IL2 has a second refractive index higher than the first refractive index. Meanwhile, the first and second refractive indices may be defined at a wavelength of 550 nm. At a wavelength of 550 nm, the first refractive index may be greater than or equal to 1.50 and less than 1.70. At a wavelength of 550 nm, the second refractive index may be greater than or equal to 1.70 and less than 1.90. For example, at a wavelength of 550 nm, the first refractive index may be approximately 1.58, and the second refractive index may be approximately 1.71. Each of the first inorganic layers IL1 provided in multiple layers may have the first refractive index, and each of the second inorganic layers IL2 provided in multiple layers may have the second refractive index.

[0137] The first inorganic layer IL1 and the second inorganic layer IL2 may each include silicon oxynitride. Although the first inorganic layer IL1 and the second inorganic layer IL2 each include silicon oxynitride, the silicon oxynitride contained in the first inorganic layer IL1 and the second inorganic layer IL2 may have different oxygen, nitrogen, and silicon contents. The first inorganic layer IL1 and the second inorganic layer IL2 may each include silicon oxynitride with different detailed compositions, and as described above, may have different refractive indices. The first inorganic layer IL1 and the second inorganic layer IL2 may each be a layer made of silicon oxynitride. The first inorganic layer IL1 and the second inorganic layer IL2, which are provided as multiple layers, may each include silicon oxynitride. Because the first inorganic layer IL1 and the second inorganic layer IL2 both include silicon oxynitride, they may be formed in succession in the same chamber using the same gases. The first inorganic layer IL1 and the second inorganic layer IL2 are each formed by providing oxygen gas, nitrogen gas, and silicon gas in the same chamber, and when forming the first inorganic layer IL1 and the second inorganic layer IL2, the partial pressures of the oxygen gas, nitrogen gas, and silicon gas may be adjusted so that the oxygen, nitrogen, and silicon contents of the silicon oxynitride contained in the first inorganic layer IL1 and the second inorganic layer IL2 are different from each other.

[0138] The oxygen contents of the first inorganic layer IL1 and the second inorganic layer IL2 may be different from each other. The oxygen content relative to the total content of the first inorganic layer IL1 is defined as the first oxygen content, and the oxygen content relative to the total content of the second inorganic layer IL2 is defined as the second oxygen content. The first oxygen content and the second oxygen content may be different. The first oxygen content may be greater than the second oxygen content. In other words, the first inorganic layer IL1 may be an "oxygen-rich" silicon oxynitride layer having a higher oxygen content than the second inorganic layer IL2.

[0139] The nitrogen contents of the first inorganic layer IL1 and the second inorganic layer IL2 may be different from each other. The nitrogen content relative to the total content of the first inorganic layer IL1 is defined as the first nitrogen content, and the nitrogen content relative to the total content of the second inorganic layer IL2 is defined as the second nitrogen content. The first nitrogen content may be higher than the second nitrogen content. That is, the second inorganic layer IL2 may be a "nitrogen-rich" silicon oxynitride layer having a higher nitrogen content than the first inorganic layer IL1. The second inorganic layer IL2 may have a higher nitrogen content and a lower oxygen content than the first inorganic layer IL1, resulting in a higher second refractive index of the second inorganic layer IL2 than the first refractive index of the first inorganic layer IL1.

[0140] The first inorganic layer IL1 may contain, relative to the total content of the first inorganic layer IL1, about 23 at% to about 26 at% oxygen, about 31 at% to about 34 at% nitrogen, and about 41 at% to about 44 at% silicon. The first inorganic layer IL1 may be a layer composed of, relative to the total content of the first inorganic layer IL1, about 23 at% to about 26 at% oxygen, about 31 at% to about 34 at% nitrogen, and about 41 at% to about 44 at% silicon. The first inorganic layer IL1 may, for example, contain, relative to the total content of the first inorganic layer IL1, about 24.22 at% oxygen, about 32.94 at% nitrogen, and about 42.85 at% silicon.

[0141] The second inorganic layer IL2 may contain, relative to the total content of the second inorganic layer IL2, about 20 at% to about 23 at% oxygen, about 35 at% to about 38 at% nitrogen, and about 39 at% to about 42 at% silicon. The second inorganic layer IL2 may be a layer composed of, relative to the total content of the second inorganic layer IL2, about 20 at% to about 23 at% oxygen, about 35 at% to about 38 at% nitrogen, and about 39 at% to about 42 at% silicon. The second inorganic layer IL2 may contain, for example, about 22.12 at% oxygen, about 36.06 at% nitrogen, and about 41.82 at% silicon relative to the total content of the second inorganic layer IL2. Meanwhile, compositional analysis of each of the first inorganic layer IL1 and the second inorganic layer IL2 may be performed by X-ray photoelectron spectroscopy (XPS).

[0142] The total thickness of the inorganic layers IL1 and IL2 included in the antireflection layer ARL may be about 100 nm or more and about 1000 nm or less, for example, about 200 nm or more and about 600 nm or less.

[0143] In the first inorganic layer IL1 and the second inorganic layer IL2, each of which is provided as a plurality of layers, the thickness of each of the first inorganic layer IL1 and the second inorganic layer IL2 may be from about 10 nm to about 150 nm. As shown in Figure 5a, the plurality of inorganic layers IL1 and IL2 includes a first inorganic layer IL1-1, a second inorganic layer IL2-1, a first inorganic layer IL1-2, and a second inorganic layer IL2-2, which are stacked in sequence. The thickness of each of the first inorganic layer IL1-1, the second inorganic layer IL2-1, the first inorganic layer IL1-2, and the second inorganic layer IL2-2 may be from about 10 nm to about 150 nm.

[0144] The anti-reflection layer ARL may have a low reflectance. The reflectance at the upper surface of the anti-reflection layer ARL may be 0.1% or less. For example, the refractive index at the upper surface of the anti-reflection layer ARL may be 0 or more and 0.05% or less. The anti-reflection layer ARL includes a plurality of inorganic layers IL1 and IL2, and the plurality of first inorganic layers IL1 and the plurality of second inorganic layers IL2 included in the anti-reflection layer ARL each have a refractive index within the above range and are arranged alternately with each other. This allows the anti-reflection layer ARL to effectively prevent external light from reflecting on the surface of the display device DD through destructive interference.

[0145] In one embodiment, the overcoat layer OC, which provides a base surface on which the antireflection layer ARL is disposed, may have a thickness greater than that of each layer included in the antireflection layer ARL. In one embodiment, the overcoat layer OC may have a thickness of about 3 μm to 10 μm. The overcoat layer OC may also have a lower refractive index than the inorganic layers IL1 and IL2 included in the antireflection layer ARL. The overcoat layer OC may have a refractive index of about 1.45 to about 1.53.

[0146] 5b, unlike the antireflection layer ARL of an embodiment shown in FIG. 5a, the antireflection layer ARL-1 of an embodiment may include n first inorganic layers IL1-1 to IL-n and n second inorganic layers IL2-1 to IL2-n. Alternatively, n may be an integer of 3 to 10. For example, n may be an integer of 3 to 5. That is, the antireflection layer ARL-1 of an embodiment may include a repeating unit structure including any one of the plurality of first inorganic layers IL1 and any one of the plurality of second inorganic layers IL2, and may have an inorganic layer IL1-IL2 structure in which 3 to 10 repeating unit structures are sequentially stacked. The number of repeating unit structures and their respective thicknesses may be selected within the above-described thickness range and within a range that allows the antireflection function of the antireflection layer ARL-1 to be achieved.

[0147] The contents regarding the first inorganic layer IL1 described above with reference to Fig. 5a may be applied to each of the n inorganic layers IL1-1 to IL1-n included in the antireflection layer ARL-1. The contents regarding the second inorganic layer IL2 described above with reference to Fig. 5a may be applied to each of the n inorganic layers IL2-1 to IL2-n included in the antireflection layer ARL-1.

[0148] 5c, unlike the antireflection layer ARL-1 of an embodiment shown in FIG. 5b, the antireflection layer ARL-2 of an embodiment may further include a low refractive index layer LR disposed on the inorganic layers IL1 and IL2. The low refractive index layer LR may be a layer having a lower refractive index than the inorganic layers IL1 and IL2.

[0149] An additional layer may not be provided on the low refractive layer LR. That is, the low refractive layer LR may be the outermost layer disposed on top of the antireflection layer ARL-2. The upper surface of the low refractive layer LR may define the outermost surface of the antireflection layer ARL-2. The low refractive layer LR may be the outermost layer of the display device DD including the antireflection layer ARL-2.

[0150] In one embodiment of the antireflection layer ARL-2, the multiple inorganic layers IL1 and IL2 may have a refractive index of 1.5 or more, and the low refractive index layer LR may have a refractive index of 1.3 or more and less than 1.5. The antireflection layer ARL-2 in one embodiment has a structure in which the multiple first inorganic layers IL1 and the multiple second inorganic layers IL2 each have a refractive index in the above-mentioned range and are arranged alternately, while a low refractive index layer LR is arranged on top of the antireflection layer ARL-2, which can effectively prevent external light from reflecting on the surface of the antireflection layer ARL-2 by destructive interference.

[0151] In one embodiment, the anti-reflection layer provided on the display panel is not a film but is formed directly on the top surface of the overcoat layer by vapor deposition or the like. The anti-reflection layer includes a plurality of inorganic layers, in which first and second inorganic layers having different refractive indices are alternately stacked. The first and second inorganic layers included in the plurality of inorganic layers both contain silicon oxynitride but have different oxygen and nitrogen contents, resulting in different refractive indices. Specifically, the first inorganic layer has a first refractive index, and the second inorganic layer has a second refractive index higher than the first refractive index. The display device of the one embodiment includes a structure in which first and second inorganic layers each containing silicon oxynitride and having different refractive indices are alternately stacked. This allows for the formation of an anti-reflection layer structure having low reflectivity and high capping properties through a simple process, thereby improving the visibility and durability of the display device.

[0152] In more detail, in the anti-reflection layer included in the display device of one embodiment, the first inorganic layer and the second inorganic layer included in the plurality of inorganic layers are both made of silicon oxynitride, so that a structure in which the first inorganic layer and the second inorganic layer are alternately stacked can be formed in the same chamber, simplifying the process of forming the anti-reflection layer. Furthermore, because the first inorganic layer and the second inorganic layer are formed using the same gas for forming silicon oxynitride, low-temperature films are possible, and foreign particle control during the process of forming the first inorganic layer and the second inorganic layer is easy, simplifying the process steps.

[0153] In an anti-reflection layer included in a display device according to an embodiment, the first inorganic layer and the second inorganic layer each have a different refractive index because they contain silicon oxynitride with different detailed compositions. In the anti-reflection layer according to an embodiment, an alternating laminate structure of the first inorganic layer and the second inorganic layer containing silicon oxynitride with different detailed compositions can be formed in the same chamber by adjusting the partial pressure of the source gas, etc., so that the refractive index of each of the first inorganic layer and the second inorganic layer included in the plurality of inorganic layers can be easily changed by simply changing the process conditions, thereby facilitating the formation of an anti-reflection layer structure having a refractive index and reflective properties within a range that matches other components included in the display device.

[0154] In addition, in one embodiment, the multiple inorganic layers include a structure in which multiple first layers and multiple second layers containing silicon oxynitride are alternately stacked, which improves the ability to block external substances such as water and oxygen from entering the interior of the display device, making it possible to form an anti-reflection layer structure with high capping properties.

[0155] 6a and 6b are perspective views showing a tiling display device according to an embodiment of the present invention, with a part of the tiling display device separated.

[0156] The tiling display device DD-T may be a device activated by an electrical signal. The tiling display device DD-T may include various embodiments. In one embodiment, the tiling display device DD-T may be a tiling display including a plurality of unit display devices DD-U1 and DD-U2. Each of the unit display devices DD-U1 and DD-U2 included in the tiling display device DD-T reduces the tolerance between the display panel and other components, making it applicable to a tiling display device. Even when each of the unit display devices DD-U1 and DD-U2 is used alone in the tiling display device DD-T, it reduces the bezel of the tiling display device DD-T, thereby improving the aesthetics of the display device. The same description of the display device DD described with reference to FIGS. 1 to 5c may be applied to each of the unit display devices DD-U1 and DD-U2.

[0157] In one embodiment of the tiling display device DD-T, the multiple unit display devices DD-U1 and DD-U2 may be arranged side by side on a plane. The multiple unit display devices DD-U1 and DD-U2 may be arranged side by side along a first direction DR1 and a second direction DR2. One side edge of each of the multiple unit display devices DD-U1 and DD-U2 may be in contact with each other. In one embodiment of the tiling display device DD-T, the multiple unit display devices DD-U1 and DD-U2 provided individually may be combined with each other to display a single image IM.

[0158] The tiling display device DD-T may include a display area in which an image IM is displayed. The display area in which the image IM is displayed may be aligned with a plane defined by the first direction DR1 and the second direction DR2. In one embodiment, the tiling display device DD-T may include a display area DA and may not include a non-display area. The tiling display device DD-T may have a three-dimensional shape having a predetermined thickness in the third direction DR3.

[0159] 7a and 7b are cross-sectional views of a unit display device according to an embodiment, where Fig. 7a is a cross-sectional view corresponding to line III-III' in Fig. 6b, and Fig. 7b is a cross-sectional view corresponding to line IV-IV' in Fig. 6b.

[0160] Referring to FIG. 7a, a unit display device DD-U1 according to an embodiment may include an anti-reflection layer ARL, an optical layer OPL, and a display panel DP. The anti-reflection layer ARL may be disposed on the display panel DP. The anti-reflection layer ARL may be disposed directly on the optical layer OPL. That is, the anti-reflection layer ARL may be formed directly on the optical layer OPL by vapor deposition or the like, rather than being provided on the optical layer OPL in the form of a separate film with an adhesive layer or bonding layer sandwiched therebetween. Meanwhile, the same descriptions as those in FIGS. 1 to 5c may be applied to the display panel DP, the optical layer OPL, and the anti-reflection layer ARL, respectively.

[0161] 7b, in the unit display device DD-U1 according to an embodiment, the side surface ARL-L of the antireflection layer ARL and the side surface DP-L of the display panel may define an aligned side surface. That is, the side surface ARL-L of the antireflection layer ARL and the side surface DP-L of the display panel may be aligned, and either one of them may not have a protruding shape along the first direction DR1. However, unlike the illustration of FIG. 7b, a predetermined tolerance may be defined between the side surface ARL-L of the antireflection layer ARL and the side surface DP-L of the display panel. That is, in the unit display device DD-U1 according to an embodiment, the side surface ARL-L of the antireflection layer ARL and the side surface DP-L of the display panel may not be aligned, and either one of the side surface ARL-L of the antireflection layer ARL and the side surface DP-L of the display panel may have a more protruding shape along the first direction DR1 or the second direction DR2 than the other one. The tolerance may be formed by a difference in etching rate between the anti-reflection layer ARL and the display panel DP when the anti-reflection layer ARL and the display panel DP are etched in the same process during the manufacturing process of the display device unit DD-U1.

[0162] 7b, the side surface of the optical layer OPL may be aligned with the side surface DP-L of the display panel DP. However, this is not limiting, and the side surface of the optical layer OPL may not be aligned with the side surface DP-L of the display panel DP.

[0163] In the unit display device DD-U1 according to an embodiment, the tolerance defined between the side ARL-L of the antireflection layer ARL and the side DP-L of the display panel may be 0 to 30 μm. Meanwhile, if the tolerance defined between the side ARL-L of the antireflection layer ARL and the side DP-L of the display panel DP is 0, this means that the side ARL-L of the antireflection layer ARL and the side DP-L of the display panel DP are aligned. In the unit display device DD-U1 according to an embodiment, the antireflection layer ARL is not provided as a separate film but is a layer formed by deposition directly on components such as the optical layer OPL. Therefore, the tolerance defined between the side ARL-L of the antireflection layer ARL and the side DP-L of the display panel DP may be 0 to 30 μm. If the tolerance dd defined between the side ARL-L of the antireflection layer ARL and the side DP-L of the display panel DP exceeds 30 μm, the large tolerance may prevent the unit display device DD-U1 according to an embodiment from being used in a tiling display device DD-T. Since the tiling display device DD-T displays a single image by contacting and combining multiple unit display devices with each other, if the tolerance defined between the side ARL-L of the anti-reflection layer ARL and the side DP-L of the display panel DP exceeds 30 μm, the distance between the display areas of adjacent unit display devices becomes large, and it may be impossible to implement the tiling display device DD-T that displays a single image.

[0164] As described above, in a unit display device including an anti-reflection layer of one embodiment, the anti-reflection layer provided on the display panel is not in the form of a film but is a layer formed directly on the top surface of the overcoat layer by vapor deposition or the like. Therefore, the tolerance between the side surfaces of the anti-reflection layer and the display panel is reduced compared to when the anti-reflection layer is provided in the form of a film, and the unit display device of one embodiment can be applied to a tiling display device.

[0165] Although the present invention has been described above with reference to preferred embodiments, it should be understood by those skilled in the art or those having ordinary knowledge in the art that various modifications and changes can be made to the present invention without departing from the spirit and technical scope of the present invention as set forth in the claims below. Therefore, the technical scope of the present invention should be determined by the claims, not by the contents of the detailed description of the specification. [Industrial Applicability]

[0166] Recent display devices include different types of light control patterns for each pixel to generate color images, resulting in a wide viewing angle and excellent color reproducibility. However, display devices including light control patterns can cause external light to be reflected from the surface of the light control patterns, reducing the display efficiency of the display panel. A display device according to an embodiment of the present invention includes a structure in which first and second inorganic layers, each containing an oxynitride and having different refractive indices, are alternately stacked, and therefore can be formed using a simple process and have low reflectivity and high capping characteristics. Therefore, the present invention, which provides a display device according to an embodiment, has high industrial applicability.

Claims

1. A display panel; an anti-reflection layer disposed on the display panel; the anti-reflection layer includes a plurality of inorganic layers; The plurality of inorganic layers are a plurality of first inorganic layers having a first refractive index, each of the first inorganic layers comprising silicon oxynitride (SiON); a plurality of second inorganic layers each comprising silicon oxynitride, the second inorganic layers having a second refractive index higher than the first refractive index.

2. the first refractive index is equal to or greater than 1.50 and less than 1.70 at a wavelength of 550 nm; The display device according to claim 1 , wherein the second refractive index is equal to or greater than 1.70 and less than 1.90 at a wavelength of 550 nm.

3. The display device according to claim 1 , wherein the plurality of first inorganic layers and the plurality of second inorganic layers are alternately stacked.

4. the plurality of first inorganic layers include a 1-1 inorganic layer and a 1-2 inorganic layer; the plurality of second inorganic layers include a 2-1 inorganic layer and a 2-2 inorganic layer; 4. The display device of claim 3, wherein the first inorganic layer, the second inorganic layer, the first inorganic layer, and the second inorganic layer are stacked in order.

5. The display device according to claim 1 , wherein the thickness of each of the first inorganic layers and the second inorganic layers is 10 nm or more and 150 nm or less.

6. The content of oxygen relative to the total content of each of the plurality of first inorganic layers is defined as a first oxygen content; The content of oxygen relative to the total content of each of the second inorganic layers is defined as a second oxygen content, The display device of claim 1 , wherein the first oxygen content is greater than the second oxygen content.

7. The nitrogen content relative to the total content of each of the plurality of first inorganic layers is defined as a first nitrogen content; The nitrogen content relative to the total content of each of the second inorganic layers is defined as a second nitrogen content, The display device of claim 1 , wherein the first nitrogen content is less than the second nitrogen content.

8. Each of the plurality of first inorganic layers contains, with respect to the total content of each of the plurality of first inorganic layers, 23 at% to 26 at% of oxygen, 31 at% to 34 at% of nitrogen, and 41 at% to 44 at% of silicon; 2. The display device of claim 1, wherein each of the second inorganic layers contains, relative to the total content of each of the second inorganic layers, 20 at% to 23 at% of oxygen, 35 at% to 38 at% of nitrogen, and 39 at% to 42 at% of silicon.

9. further comprising an optical layer disposed between the display panel and the anti-reflection layer; The optical layer is a light control layer disposed on the display panel; The display device according to claim 1 , further comprising: a color filter layer disposed between the light control layer and the anti-reflection layer.

10. the display panel includes a plurality of light-emitting elements that generate a first light; The light control layer is a first light control section that transmits the first light; a second light control unit that converts the first light into a second light having a wavelength different from that of the first light; The display device according to claim 9 , further comprising: a third light control unit that converts the first light into third light having a wavelength different from that of the first light and the second light.

11. the optical layer further includes an overcoat layer disposed on the color filter layer; The display device of claim 9 , wherein the anti-reflection layer contacts an upper surface of the overcoat layer.

12. the refractive index of the overcoat layer is 1.45 or more and 1.53 or less; 12. The display device according to claim 11, wherein the overcoat layer has a thickness of 3 μm or more and 10 μm or less.

13. The antireflection layer is further comprising a low refractive index layer disposed on the plurality of inorganic layers; 2. The display device of claim 1, wherein an upper surface of the low refractive index layer defines an outermost surface of the anti-reflection layer.

14. 14. The display device according to claim 13, wherein the refractive index of the low refractive index layer is 1.3 or more and 1.5 or less.

15. 2. The display device according to claim 1, wherein the reflectance of the upper surface of the anti-reflection layer is 2% or less.

16. A display panel; an anti-reflection layer disposed on the display panel; the anti-reflection layer includes a plurality of inorganic layers; The plurality of inorganic layers are a plurality of first inorganic layers each comprising silicon oxynitride; a plurality of second inorganic layers each comprising silicon oxynitride; The content of oxygen relative to the total content of each of the plurality of first inorganic layers is defined as a first oxygen content; The content of oxygen relative to the total content of each of the second inorganic layers is defined as a second oxygen content, The display device wherein the first oxygen content is greater than the second oxygen content.

17. The nitrogen content relative to the total content of each of the plurality of first inorganic layers is defined as a first nitrogen content; The nitrogen content relative to the total content of each of the second inorganic layers is defined as a second nitrogen content, The display device of claim 16 , wherein the first nitrogen content is less than the second nitrogen content.

18. further comprising an optical layer disposed between the display panel and the anti-reflection layer; The optical layer is a light control layer disposed on the display panel; a color filter layer disposed between the light control layer and the anti-reflection layer; an overcoat layer disposed on the color filter layer; 17. The display device of claim 16, wherein the anti-reflection layer is disposed directly on the overcoat layer.

19. In a tiling display device including a plurality of unit display devices arranged along at least one direction, Each of the plurality of unit display devices includes: A display panel; an anti-reflection layer disposed on the display panel; the anti-reflection layer includes a plurality of inorganic layers; The plurality of inorganic layers are a first inorganic layer having a first refractive index and comprising silicon oxynitride; a second inorganic layer contacting one of an upper surface and a lower surface of the first inorganic layer, the second inorganic layer having a second refractive index higher than the first refractive index, and including silicon oxynitride.

20. The tiling display device of claim 19 , wherein a side surface of the anti-reflection layer and a side surface of the display panel define an aligned side surface.

Images