Display device

Abstract

The present invention provides a display device including a first pixel electrode and a second pixel electrode disposed on a substrate, an intermediate layer positioned on the first pixel electrode and the second pixel electrode and emitting a first light, a counter electrode positioned on the intermediate layer, a first color filter positioned on the counter electrode and overlapping with the first pixel electrode in a plane, an organic layer positioned between the counter electrode and the first color filter, and a second color filter positioned on the counter electrode and overlapping with the second pixel electrode in a plane, wherein the first light has an X value of 0.220 to 0.222 and a Y value of 0.225 to 0.309 in CIE color coordinates, and the first light is transmitted through the organic layer along a substantially straight path.

Description

[Technical Field]

[0001] The present invention relates to a display device capable of displaying high quality images. [Background technology]

[0002] The display device has a plurality of pixels. For a full-color display device, the plurality of pixels emit light of different colors. To this end, at least some of the pixels of the display device have color converters. Thus, light of a first color generated in a light-emitting portion of some of the pixels is converted into light of a second color through the corresponding color converter and then output to the outside.

[0003] The background art of this specification includes ideas, concepts and the like that were not part of what was known or appreciated by those skilled in the art prior to the effective filing date of the present application. Summary of the Invention [Problem to be solved by the invention]

[0004] The present invention aims to solve various problems, including those mentioned above, and to provide a display device capable of displaying high-quality images, but these problems are merely examples and are not intended to limit the scope of the present invention. [Means for solving the problem]

[0005] According to one aspect of the present invention, there is provided a display device including a first pixel electrode and a second pixel electrode disposed on a substrate, an intermediate layer positioned on the first pixel electrode and the second pixel electrode and emitting a first light, a counter electrode positioned on the intermediate layer, a first color filter positioned on the counter electrode and overlapping (overlapping) the first pixel electrode in a plane, an organic layer positioned between the counter electrode and the first color filter, and a second color filter positioned on the counter electrode and overlapping the second pixel electrode in a plane, wherein the first light has an X value of 0.220 to 0.222 and a Y value of 0.225 to 0.309 in CIE color coordinates, and the first light is transmitted through the organic layer along a substantially straight path.

[0006] In one embodiment, the emission spectrum intensity of the first light has a first peak value that is a local maximum value in a wavelength band of 440 nm to 460 nm, and when the measurement angle of the emission spectrum intensity is changed based on a direction perpendicular to the first substrate, the first peak value may continuously decrease as the measurement angle increases.

[0007] In one embodiment, the first color filter may include scattering particles.

[0008] In one embodiment, the display device further includes a sealing layer disposed on the counter electrode and including at least one inorganic sealing layer and at least one organic sealing layer, and the refractive index of the organic layer may be substantially the same as the refractive index of the at least one organic sealing layer.

[0009] In an embodiment, the display device may further include a filler positioned between the encapsulation layer and the first and second color filters, and a protective layer positioned between the organic material layer and the filler.

[0010] In an embodiment, the display device further includes a filler positioned between the encapsulation layer and the first and second color filters, and the organic material layer may be integral with the filler.

[0011] In one embodiment, the intermediate layer includes a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, and a fourth light-emitting layer that overlap each other, and the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer may emit blue light, and the fourth light-emitting layer may emit green light.

[0012] In one embodiment, the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer may each emit light having a wavelength ranging from 400 nm to 500 nm, and the fourth light-emitting layer may emit light having a wavelength ranging from 500 nm to 600 nm.

[0013] In one embodiment, the intermediate layer includes at least one hole injection layer, and the distance between a first interface between the first pixel electrode and the intermediate layer and a second interface between the intermediate layer and the counter electrode may be 3350 Å to 3500 Å.

[0014] In one embodiment, the display device further includes a first color conversion layer located between the opposing electrode and the second color filter, which converts the first light into light of a wavelength belonging to a second wavelength band, and the first color filter may pass only light of a wavelength belonging to the first wavelength band, and the second color filter may pass only light of a wavelength belonging to the second wavelength band.

[0015] In one embodiment, the display device may further include a third pixel electrode disposed on the substrate, and a third color filter positioned on the opposing electrode so as to overlap the third pixel electrode in a plane, and which transmits only light of a wavelength belonging to a third wavelength band.

[0016] In an embodiment, the display device may further include a second color conversion layer positioned between the counter electrode and the third color filter, the second color conversion layer converting the first light into light having a wavelength belonging to a third wavelength band.

[0017] In one embodiment, the third color filter may include scattering particles.

[0018] According to another aspect of the present invention, there is provided a display device including: a first pixel electrode and a second pixel electrode disposed on a first substrate; an intermediate layer located on the first pixel electrode and the second pixel electrode and emitting first light; a counter electrode located on the intermediate layer; a second substrate located on an upper surface of the first substrate with the counter electrode interposed therebetween; a bank located on a lower surface of the second substrate facing the first substrate, the bank having a first bank opening overlapping the first pixel electrode and a second bank opening overlapping the second pixel electrode; a first color filter interposed between the bank and the second substrate and overlapping the first pixel electrode in a planar manner; an organic layer located between the counter electrode and the first color filter; and a second color filter interposed between the bank and the second substrate and overlapping the second pixel electrode in a planar manner, wherein the first light has an X value of 0.220 to 0.222 and a Y value of 0.220 to 0.310 in CIE color coordinates, and the first light is transmitted through the organic layer along a substantially straight path.

[0019] In one embodiment, the emission spectrum of the first light has a first peak value that is a local maximum value in a wavelength band of 440 nm to 460 nm, and when the measurement angle of the emission spectrum intensity is changed based on a direction perpendicular to the first substrate, the first peak value may continuously decrease as the measurement angle increases.

[0020] In one embodiment, the first color filter may include scattering particles.

[0021] In one embodiment, the display device further includes a sealing layer disposed on the counter electrode and including at least one inorganic sealing layer and at least one organic sealing layer, and the refractive index of the organic layer may be the same as the refractive index of the organic sealing layer.

[0022] In one embodiment, the intermediate layer includes a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, and a fourth light-emitting layer that overlap each other on a plane, and the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer emit blue light, and the fourth light-emitting layer emits green light.

[0023] In one embodiment, the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer may each emit light in a wavelength range of 400 nm to 500 nm, and the fourth light-emitting layer may emit light in a wavelength range of 500 nm to 600 nm.

[0024] In one embodiment, the intermediate layer includes at least one hole injection layer, and the distance between a first interface between the first pixel electrode and the intermediate layer and a second interface between the intermediate layer and the counter electrode may be 3350 Å to 3500 Å.

[0025] In an embodiment, the display device further includes a filler disposed between the first color filter, the second color filter, and the counter electrode, and the organic material layer may be integral with the filler.

[0026] In one embodiment, the filler material may fill the first bank opening.

[0027] Other aspects, features, and advantages beyond those described above will become apparent from the following drawings, claims, and detailed description of the invention. [Effects of the Invention]

[0028] According to an embodiment of the present invention as described above, a display device capable of displaying high quality images can be realized, although it should be understood that the scope of the present invention is not limited to such advantages. [Brief explanation of the drawings]

[0029] [Figure 1] 1 is a plan view schematically illustrating a display device according to an embodiment of the present invention; [Figure 2A] 1 is a plan view schematically illustrating a portion of a display device according to an embodiment of the present invention. [Figure 2B] 1 is a plan view schematically illustrating a portion of a display device according to an embodiment of the present invention. [Figure 2C] 1 is a plan view schematically illustrating a portion of a display device according to an embodiment of the present invention. [Figure 3] 1 is a cross-sectional view schematically illustrating each pixel of a display device according to an embodiment of the present invention. [Figure 4] 3 shows the optical parts of a color converting and light transmitting layer according to one embodiment of the present invention. [Figure 5] 1 is a cross-sectional view schematically illustrating a display device according to an embodiment of the present invention. [Figure 6] 1 is a cross-sectional view schematically illustrating a display device according to an embodiment of the present invention. [Figure 7A] FIG. 2 is a cross-sectional view schematically illustrating an intermediate layer according to an embodiment of the present invention. [Figure 7B] FIG. 2 is a cross-sectional view schematically illustrating an intermediate layer according to an embodiment of the present invention. [Figure 7C] FIG. 2 is a cross-sectional view schematically illustrating an intermediate layer according to an embodiment of the present invention. [Figure 8A] 1 is a graph showing emission spectrum intensity according to a measurement angle of light emitted from a light emitting device included in a display device according to an embodiment of the present invention; [Figure 8B] 1 is a graph showing emission spectrum intensity according to a measurement angle of light emitted from a light emitting device included in a display device according to an embodiment of the present invention; [Figure 8C] 1 is a graph showing emission spectrum intensity according to a measurement angle of light emitted from a light emitting device included in a display device according to an embodiment of the present invention; [Figure 8D] 1 is a graph showing emission spectrum intensity according to a measurement angle of light emitted from a light emitting device included in a display device according to an embodiment of the present invention; [Figure 9A] 10 is a graph showing emission spectrum intensity according to a measurement angle of light emitted from a light emitting element included in a display device according to a comparative example. [Figure 9B] 10 is a graph showing emission spectrum intensity according to a measurement angle of light emitted from a light emitting element included in a display device according to a comparative example. [Figure 9C]10 is a graph showing emission spectrum intensity according to a measurement angle of light emitted from a light emitting element included in a display device according to a comparative example. [Figure 10] 10 is a table showing color coordinates, luminous efficiency, and white luminous efficiency of light emitted from each pixel of a display device according to changes in the thickness of an intermediate layer. [Figure 11] 10 is a graph showing emission spectrum intensities of light emitted from a first pixel of a display device according to an exemplary embodiment of the present invention and light emitted from a first pixel of a display device according to a comparative example. [Figure 12] 10 is a table showing light source color coordinates and white light emitting efficiency of a display device according to changes in the thickness of an intermediate layer. [Figure 13] 10 is a graph showing white light emitting efficiency of a display device according to changes in the thickness of an intermediate layer. DETAILED DESCRIPTION OF THE INVENTION

[0030] While the present invention can be modified in various ways and can have various embodiments, specific embodiments are illustrated in the drawings and will be described in detail in the detailed description. The advantages and features of the present invention, as well as methods for achieving them, will become apparent from the following detailed description of the embodiments, taken in conjunction with the drawings. However, the present invention is not limited to the embodiments disclosed below, and may be embodied in various forms.

[0031] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. When describing with reference to the drawings, the same or corresponding elements will be designated by the same reference numerals, and redundant description thereof will be omitted.

[0032] In this specification, the terms "first," "second," etc. are not used in a limiting sense but are used to distinguish one component from another component.

[0033] As used herein, singular expressions include plural expressions unless the context clearly dictates otherwise.

[0034] As used herein, the term "overlap" or the like means that one component is above or below another component, including cases where layers, planes, stacks, etc., fully overlap or partially overlap.

[0035] As used herein, terms such as "non-overlapping" refer to when a component is separated or offset from another component. As used herein, "on a plane" refers to when a target component is viewed from above, and "on a cross section" refers to when a target component is viewed from the side of a cross section cut vertically.

[0036] In this specification, the terms "comprise" or "have" mean that the features or components described in the specification are present, but do not preclude the possibility that one or more other features or components may also be added.

[0037] In this specification, when a part such as a film, region, or component is said to be on top of or above another part, this does not only mean that it is directly on top of the other part, but also includes cases where another film, region, component, etc. is interposed between them.

[0038] As used herein, when membranes, regions, components, etc. are said to be connected, this includes cases where the membranes, regions, components, etc. are directly connected, and / or cases where the membranes, regions, components, etc. are indirectly connected via another membrane, region, component, etc. For example, as used herein, when membranes, regions, components, etc. are said to be electrically connected, this includes cases where the membranes, regions, components, etc. are directly and electrically connected, and / or cases where the membranes, regions, components, etc. are indirectly and electrically connected via another membrane, region, component, etc., interposed therebetween.

[0039] In this specification, "A and / or B" refers to A, B, or A and B. And "at least one of A and B" refers to A, B, or A and B.

[0040] In this specification, the x-axis, y-axis, and z-axis are not limited to the three axes of a Cartesian coordinate system, but may be interpreted in a broad sense to include this. For example, the x-axis, y-axis, and z-axis may be perpendicular to each other, but may also refer to different directions that are not perpendicular to each other.

[0041] In this specification, when an embodiment can be implemented differently, the order of certain steps may be different from that described. For example, two steps described as successive may be performed substantially simultaneously or in the reverse order from that described.

[0042] In this specification, the term "intermediate layer" refers to any single and / or multiple layers disposed between the pixel electrode and the counter electrode of the light-emitting element.

[0043] As used herein, terms such as "about" or "approximately" include the specified value and mean within an error range that a person skilled in the art would determine by taking into account errors associated with measurement, etc. For example, "about" means a value within the standard deviation of the specified value, or a value within ±20%, 10%, or 5% of the specified value.

[0044] In the drawings, the size of components may be exaggerated or reduced for the sake of convenience of explanation. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for the sake of convenience of explanation, and the present invention is not necessarily limited to what is shown in the drawings.

[0045] 1 is a plan view schematically illustrating a display device according to an embodiment of the present invention. As shown in FIG. 1, the display device according to this embodiment includes a display panel 10. Such a display device may be any device that includes the display panel 10. For example, the display device may be a variety of devices such as a smartphone, a tablet, a laptop, a television, or an advertising billboard.

[0046] The display panel 10 includes a display area DA and a peripheral area PA located outside the display area DA. In FIG. 1, the display area DA is shown to have a rectangular shape. However, the present invention is not limited thereto. The display area DA may have various shapes, such as a circle, an ellipse, a polygon, or a specific geometric shape.

[0047] The display area DA is a portion for displaying an image and may have a plurality of pixels PX arranged therein. Each pixel PX may include a display element such as an organic light-emitting diode (OLED). Each pixel PX may emit, for example, red, green, or blue light. The pixel PX may be connected to a pixel circuit including a thin film transistor (TFT), a storage capacitor, etc. The pixel circuit may be connected to scan lines SL for transmitting scan signals, data lines DL for transmitting data signals while crossing the scan lines SL, and driving voltage lines PL for supplying driving voltages. The scan lines SL may extend in the x direction, and the data lines DL and driving voltage lines PL may extend in the y direction.

[0048] The pixels PX can emit light of a brightness corresponding to an electrical signal from an electrically connected pixel circuit. The display area DA displays a predetermined image through the light emitted from the pixels PX. For reference, the pixels PX can be defined as areas that emit light of any one of red, green, and blue colors, as described above.

[0049] The peripheral area PA is an area where pixels PX are not arranged and may not display an image. Power supply wiring for driving the pixels PX may be located in the peripheral area PA. Also, a printed circuit board including a driving circuit unit and a terminal unit to which a driver IC is connected may be located in the peripheral area PA.

[0050] For reference, since the display panel 10 includes the first substrate 100, it can be said that the first substrate 100 has such a display area DA and a peripheral area PA.

[0051] 2A, 2B, and 2C are plan views each showing a schematic view of a portion of a display device according to an embodiment of the present invention, and are enlarged plan views showing an area A of the display panel in FIG.

[0052] 2A, 2B, and 2C, the display device includes a plurality of pixels PX. The pixels PX include a first pixel PX1, a second pixel PX2, and a third pixel PX3 that emit light of different colors. The first pixel PX1 emits blue light, the second pixel PX2 emits red light, and the third pixel PX3 emits green light.

[0053] Each of the first pixel PX1, the second pixel PX2, and the third pixel PX3 may be polygonal when viewed in a direction perpendicular to the first substrate 100 (z-axis direction). In FIGS. 2A, 2B, and 2C, each of the first pixel PX1, the second pixel PX2, and the third pixel PX3 is shown as having a quadrangle when viewed in a direction perpendicular to the first substrate 100 (z-axis direction), specifically, as having a quadrangle with rounded corners. However, the present invention is not limited thereto. For example, each of the first pixel PX1, the second pixel PX2, and the third pixel PX3 may have a circular or elliptical shape when viewed in a direction perpendicular to the first substrate 100 (z-axis direction).

[0054] The first pixel PX1, the second pixel PX2, and the third pixel PX3 have different sizes, i.e., different areas. For example, the area of ​​the second pixel PX2 is smaller than the areas of the first pixel PX1 and the third pixel PX3. However, the present invention is not limited to this. For example, the areas of the first pixel PX1, the second pixel PX2, and the third pixel PX3 are substantially the same.

[0055] The first pixel PX1 may include a first pixel electrode 311, the second pixel PX2 may include a second pixel electrode 312, and the third pixel PX3 may include a third pixel electrode 313. The pixel defining (defining) film 150 covers the edges of the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313. That is, the pixel defining (defining) film 150 may have an opening that exposes the center of the first pixel electrode 311, an opening that exposes the center of the second pixel electrode 312, and an opening that exposes the center of the third pixel electrode 313.

[0056] 2A, which is a plan view schematically illustrating a portion of a display device according to an embodiment of the present invention, the first pixel PX1, the second pixel PX2, and the third pixel PX3 may be arranged in a stripe pattern. That is, the first pixel PX1, the second pixel PX2, and the third pixel PX3 may be arranged in order along the x-axis direction. Of course, the present invention is not limited to the stripe pattern arrangement of the first pixel PX1, the second pixel PX2, and the third pixel PX3.

[0057] For example, as shown in FIG. 2B, which is a plan view schematically illustrating a portion of a display device according to an embodiment of the present invention, the first pixel PX1, the second pixel PX2, and the third pixel PX3 may be arranged in a PENTILE™ manner. That is, assuming a virtual rectangle VQ centered on the center of the second pixel PX2, the first pixel PX1 may be arranged at a first vertex Q1, and the third pixel PX3 may be arranged at a second vertex Q2 adjacent to the first vertex Q1. Also, the first pixel PX1 may be arranged at a third vertex Q3 that is symmetrical to the first vertex Q1 with respect to the center of the virtual rectangle VQ, and the third pixel PX3 may be arranged at a fourth vertex Q4 that is symmetrical to the second vertex Q2 with respect to the center of the virtual rectangle VQ. Such a virtual rectangle VQ may be a square. The first pixel PX1 and the third pixel PX3 may be alternately arranged along the x-axis direction and the y-axis direction intersecting the x-axis direction. That is, a set of the first pixel PX1, the second pixel PX2, and the third pixel PX3 may be repeatedly positioned in the x-axis direction and may also be repeatedly positioned in the y-axis direction, so that the second pixel PX2 may be surrounded by the first pixel PX1 and the third pixel PX3.

[0058] 2C, which is a plan view schematically illustrating a portion of a display device according to an embodiment of the present invention, the first pixel PX1, the second pixel PX2, and the third pixel PX3 may be arranged in an S-stripe pattern. In this case, the second pixel PX2 and the third pixel PX3 are alternately positioned in the y-axis direction, and the pair of the second pixel PX2 and the third pixel PX3 and the first pixel PX1 are alternately positioned in the x-axis direction. Alternatively, the pixels PX may be arranged in a mosaic pattern.

[0059] The shapes of the first pixel PX1, the second pixel PX2, and the third pixel PX3 as viewed in a direction perpendicular to the first substrate 100 (the z-axis direction) may be defined by a first color filter 810 (see FIG. 5), a second color filter 820 (see FIG. 5), and / or a third color filter 830 (see FIG. 5), as described below. In one embodiment, the portions of the first pixel electrode 311 of the first pixel PX1, the second pixel electrode 312 of the second pixel PX2, and the third pixel electrode 313 of the third pixel PX3 exposed by the pixel defining film 150 may be different from the shapes of the first pixel PX1, the second pixel PX2, and the third pixel PX3 defined by the first color filter 810, the second color filter 820, and / or the third color filter 830.

[0060] FIG. 3 is a cross-sectional view schematically illustrating each pixel of a display device according to an embodiment of the present invention.

[0061] 3, the display device DV may include a circuit layer 200 on a first substrate 100. The circuit layer 200 may include a first pixel circuit PC1, a second pixel circuit PC2, and a third pixel circuit PC3, and the first pixel circuit PC1, the second pixel circuit PC2, and the third pixel circuit PC3 may be electrically connected to the first light-emitting element LED1, the second light-emitting element LED2, and the third light-emitting element LED3 of the light-emitting element layer 300, respectively.

[0062] The first light emitting element LED1, the second light emitting element LED2, and the third light emitting element LED3 may include organic light emitting diodes containing organic materials. The first light emitting element LED1, the second light emitting element LED2, and the third light emitting element LED3 may emit light of the same color. For example, the first light L0 emitted from the first light emitting element LED1, the second light emitting element LED2, and the third light emitting element LED3 may pass through the encapsulation layer 400 on the light emitting element layer 300 and the color conversion-transmitting layer 600. The first light L0 may have an X value of 0.220 to 0.222 and a Y value of 0.225 to 0.309 in the CIE color coordinates. The CIE color coordinates are color coordinates established by the International Commission on Illumination (CIE) as standards for international determination of photometry and colorimetry.

[0063] The color conversion-transmitting layer 600 may include a color conversion section that converts the first light L0 emitted from the light-emitting element layer 300 into light of a wavelength belonging to another wavelength band, and an organic layer 610 that transmits the first light L0 emitted from the light-emitting element layer 300 without color conversion.

[0064] In one embodiment, the first light L0 has a wavelength belonging to a first wavelength band, which may be, for example, about 450 nm to about 495 nm. In this specification, when light A has a wavelength belonging to wavelength band B having a certain range, it means that the wavelength at a point having the maximum intensity value in the emission spectrum of light A belongs to wavelength band B.

[0065] In other embodiments, the first light L0 may be a mixture of light having wavelengths in different wavelength bands, for example, a mixture of light blue light and dark blue light, or a mixture of blue light and green light.

[0066] As shown in FIG. 3, the color conversion-transmitting layer 600 includes an organic layer 610 corresponding to the first pixel PX1, a first color conversion layer 620 corresponding to the second pixel PX2, and a second color conversion layer 630 corresponding to the third pixel PX3.

[0067] The organic layer 610 may transmit the first light L0 emitted by the first light-emitting element LED1 without converting it. The first light L0 passes through the organic layer 610 along a linear path. In this specification, "light passing through the layer A along a linear path" means that the light is not scattered by optical interfaces within the layer A and passes through a substantially linear path. The first color conversion layer 620 may convert the first light L0 emitted by the second light-emitting element LED2 into third light L2 having a wavelength belonging to a second wavelength band. Similarly, the second color conversion layer 630 may convert the first light L0 emitted by the third light-emitting element LED3 into fourth light L3 having a wavelength belonging to a third wavelength band. Here, the second wavelength band may be approximately 625 nm to approximately 780 nm, and the third wavelength band may be approximately 495 nm to approximately 570 nm. The present invention is not limited thereto, and the wavelength bands of the first light L0, the third light L2, and the fourth light L3 may be different.

[0068] In some embodiments, the second color conversion layer 630 may transmit the first light L0 emitted by the third light-emitting element LED3 without color conversion. Similarly, in some embodiments, the first color conversion layer 620 may transmit the first light L0 emitted by the second light-emitting element LED2 without color conversion.

[0069] The color filter layer 800 is disposed on the color conversion-transmitting layer 600. The color filter layer 800 may include a first color filter 810, a second color filter 820, and a third color filter 830 of different colors. For example, the first color filter 810 may be a layer that transmits only the second light L1 having a wavelength ranging from about 450 nm to about 495 nm. The second color filter 820 may be a layer that transmits only the third light L2 having a wavelength ranging from about 625 nm to about 780 nm. The third color filter 830 may be a layer that transmits only the fourth light L3 having a wavelength ranging from about 495 nm to about 570 nm. The color filter layer 800 may increase the color purity of light emitted to the outside, thereby improving the quality of the displayed image. In addition, the color filter layer 800 may reduce the proportion of external light incident on the display device DV that is reflected by components below the color filter layer 800 and then emitted back to the outside, thereby reducing external light reflection.

[0070] In some embodiments, the first color filter 810 includes scattering particles. Here, the scattering particles may be metal oxide particles or organic particles. Metal oxides for the scattering particles may include titanium oxide (TiO), zirconium oxide (ZrO), aluminum oxide (AlO), indium oxide (InO), zinc oxide (ZnO), tin oxide (SnO), and combinations thereof. Organic materials for the scattering particles may include acrylic resins, urethane resins, and combinations thereof. The scattering particles can scatter light in various directions regardless of the incident angle without substantially converting the wavelength of the incident light. This allows the scattering particles to improve the side visibility of the display device. In some embodiments, the second color filter 820 and / or the third color filter 830 may include scattering particles.

[0071] The second substrate 900 is positioned on the color filter layer 800. The second substrate 900 may include glass or a light-transmitting organic material, such as an acrylic resin.

[0072] In one embodiment, the color filter layer 800 and the color conversion-transmitting layer 600 may be sequentially formed on the second substrate 900, and then the first substrate 100 and the second substrate 900 may be combined so that the color conversion-transmitting layer 600 is located between the first substrate 100 and the second substrate 900.

[0073] In another embodiment, the color conversion-transmitting layer 600 and the color filter layer 800 may be sequentially formed on the first substrate 100, and then the second substrate 900 may be coated on the color filter layer 800 and then cured to form the second substrate 900.

[0074] 4 shows each optical part of the color converting and light transmitting layer according to an embodiment of the present invention, and is a diagram for explaining the color converting and light transmitting layer 600 of the display device shown in FIG.

[0075] 4, the organic layer 610 may be provided as a light-transmitting layer that transmits the first light L0 incident on the organic layer 610 without converting it. The organic layer 610 may include a first base resin 1151.

[0076] The first base resin 1151 contained in the organic layer 610 is a light-transmitting material. For example, the first base resin 1151 may include an acrylic resin, an epoxy resin, BCB (benzocyclobutene), HMDSO (hexamethyldisiloxane), or a combination thereof.

[0077] The organic layer 610 may not include scattering particles or quantum dots. In other words, there may be almost no optical interfaces that scatter light inside the organic layer 610. Therefore, the first light L0 incident on the organic layer 610 can be transmitted through the organic layer 610 along a substantially straight path without being scattered or refracted by the scattering particles and / or quantum dots.

[0078] The first color conversion layer 620 is provided as a color conversion layer that converts light having a wavelength belonging to a first wavelength band in the first light L0 into third light L2 having a wavelength belonging to a second wavelength band. Here, the second wavelength band may be about 625 nm to about 780 nm. Of course, the present invention is not limited thereto, and the wavelength band to which the wavelength to be converted by the first color conversion layer 620 belongs may be different from the wavelength band to which the converted wavelength belongs.

[0079] The first color conversion layer 620 may include a second base resin 1161, first quantum dots 1162 dispersed in the second base resin 1161, and first scattering particles 1163.

[0080] As used herein, quantum dots refer to crystals of semiconductor compounds and may include any material capable of emitting light of various wavelengths depending on the size of the crystals. The diameter of such quantum dots may be, for example, about 1 nm to 10 nm.

[0081] Quantum dots can be synthesized by wet chemical processes, metalorganic chemical vapor deposition processes, molecular beam epitaxy processes, or similar processes. A wet chemical process involves mixing an organic solvent with a precursor material and then growing quantum dot particle crystals. In the case of a wet chemical process, the organic solvent naturally functions as a dispersant that coordinates with the surface of the quantum dot crystals during crystal growth, regulating the crystal growth. This makes the wet chemical process easier than gas-phase deposition methods such as metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Furthermore, the wet chemical process allows for controlled growth of quantum dot particles while being a low-cost process.

[0082] Such quantum dots may comprise II-VI semiconductor compounds, III-V semiconductor compounds, III-VI semiconductor compounds, I-III-VI semiconductor compounds, IV-VI semiconductor compounds, Group IV elements or compounds, or any combination thereof.

[0083] Examples of II-VI semiconductor compounds may include binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, or MgS, ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, or MgZnS, quaternary compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, or HgZnSTe, or any combination thereof.

[0084] Examples of III-V semiconductor compounds may include binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, or InSb, ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNPs, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNPs, InAlPs, InNAs, InNSb, InPAs, InPSb, or GaAlNPs, quaternary compounds such as GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNPs, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNPs, InAlNAs, InAlNSb, InAlPAs, or InAlPSb, or any combination thereof, while III-V semiconductor compounds may further include a group II element. Examples of III-V semiconductor compounds further containing a Group II element may include InZnP, InGaZnP, or InAlZnP.

[0085] Examples of III-VI semiconductor compounds may include binary compounds such as GaS, GaSe, Ga2Se3, GaTe, InS, In2S3, InSe, In2Se3, or InTe, ternary compounds such as AgInS, AgInS2, CuInS, CuInS2, InGaS3, or InGaSe3, or any combination thereof.

[0086] Examples of I-III-VI semiconductor compounds may include ternary compounds such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, or AgAlO2, or any combination thereof.

[0087] Examples of IV-VI semiconductor compounds may include binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, or PbTe, ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, or SnPbTe, quaternary compounds such as SnPbSSe, SnPbSeTe, or SnPbSTe, or any combination thereof.

[0088] Group IV elements or compounds may include single elements such as Si or Ge, binary compounds such as SiC or SiGe, or any combination thereof.

[0089] Each element contained in multi-element compounds, such as binary, ternary and quaternary compounds, can be present in the particles in a uniform or non-uniform concentration.

[0090] Meanwhile, quantum dots can have a single structure in which the concentration of each element contained in the quantum dot is uniform, or a core-shell dual structure. For example, the material contained in the core can be different from the material contained in the shell. The shell of a quantum dot can function as a protective layer to prevent chemical denaturation of the core and maintain its semiconducting properties, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell can be single-layered or multi-layered. The interface between the core and shell can have a concentration gradient in which the concentration of elements present in the shell decreases toward the center.

[0091] Examples of quantum dot shells include metal or non-metal oxides, semiconductor compounds, or combinations thereof. Examples of metal or non-metal oxides include binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, or NiO, ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4, or any combination thereof. Examples of semiconductor compounds include II-VI semiconductor compounds, III-V semiconductor compounds, III-VI semiconductor compounds, I-III-VI semiconductor compounds, IV-VI semiconductor compounds, or any combination thereof, as described above. For example, the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0092] Quantum dots have a full width of half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, about 40 nm or less, or about 30 nm or less, and can improve color purity and color reproducibility within this range. Furthermore, light emitted through such quantum dots is emitted in all directions, which can improve the light viewing angle.

[0093] The quantum dots may be in the form of spherical, pyramidal, multi-arm or cubic nanoparticles, nanotubes, nanowires, nanofibers or nanoplatelets.

[0094] By adjusting the size of the quantum dots, the energy band gap can be adjusted, and thus light of various wavelengths can be obtained from the quantum dot light emitting layer. Therefore, by using quantum dots of different sizes, light emitting devices that emit light of various wavelengths can be realized.

[0095] The first quantum dots 1162 may be excited by the first light L0 and emit third light L2 having a wavelength belonging to the second wavelength band. The second base resin 1161 may include an acrylic resin, an epoxy resin, BCB (benzocyclobutene), HMDSO (hexamethyldisiloxane), or a combination thereof. The first scattering particles 1163 may scatter the first light L0 that is not absorbed by the first quantum dots 1162, thereby exciting more first quantum dots 1162 and improving color conversion efficiency. The first scattering particles 1163 may be metal oxide particles such as titanium oxide (TiO2) or organic particles.

[0096] The second color conversion layer 630 may be provided as a color conversion layer that converts light having a wavelength belonging to a first wavelength band of the first light L0 into fourth light L3 having a wavelength belonging to a third wavelength band. Here, the third wavelength band may be about 495 nm to about 570 nm. Of course, the present invention is not limited thereto, and the wavelength band to which the wavelength to be converted by the second color conversion layer 630 belongs may be different from the wavelength band to which the converted wavelength belongs.

[0097] The second color conversion layer 630 may include a third base resin 1171, second quantum dots 1172 dispersed in the third base resin 1171, and second scattering particles 1173.

[0098] The second quantum dots 1172 may be excited by the first light L0 and emit fourth light L3 having a wavelength belonging to a third wavelength band. The third base resin 1171 may include an acrylic resin, an epoxy resin, BCB (Benzocyclobutene), HMDSO (Hexamethyl disiloxane), or a combination thereof. The second scattering particles 1173 may scatter the first light L0 that is not absorbed by the second quantum dots 1172, thereby exciting more second quantum dots 1172, thereby improving color conversion efficiency. The second scattering particles 1173 may be metal oxide particles such as titanium oxide (TiO2) or organic particles.

[0099] In some embodiments, the first quantum dots 1162 and the second quantum dots 1172 may comprise the same or similar material, and in such cases, the size of the first quantum dots 1162 may be larger than the size of the second quantum dots 1172.

[0100] In some embodiments, the organic layer 610 and the second color conversion layer 630 may each be provided as a translucent layer that transmits the incident first light L0 without converting it. As described above, in some embodiments, the first light L0 may be a mixture of light having wavelengths belonging to different wavelength bands. The second color conversion layer 630 may include a third base resin 1171 having second scattering particles 1173 dispersed therein.

[0101] At this time, the third color filter 830 (see FIG. 3) allows only the fourth light L3, which has a wavelength between about 495 nm and about 570 nm, out of the first light L0 transmitted through the second color conversion layer 630 to pass through.

[0102] In some other embodiments, the organic layer 610, the first color conversion layer 620, and the second color conversion layer 630 may each be provided as a light-transmitting layer that transmits the incident first light L0 without converting it. The first color conversion layer 620 may include a second base resin 1161 having first scattering particles 1163 dispersed therein, and the second color conversion layer 630 may include second scattering particles 1173 having second scattering particles 1173 dispersed therein. The first color conversion layer 620 may not include the first quantum dots 1162, and the second color conversion layer 630 may not include the second quantum dots 1172.

[0103] At this time, the second color filter 820 (see Figure 3) allows only the third light L2 having a wavelength of approximately 625 nm to 780 nm to pass through the first light L0 that has passed through the first color conversion layer 620, and the third color filter 830 (see Figure 3) allows only the fourth light L3 having a wavelength of approximately 495 nm to 570 nm to pass through the first light L0 that has passed through the second color conversion layer 630.

[0104] In some embodiments, the organic layer 610 may be omitted.

[0105] 5 is a cross-sectional view schematically illustrating a display device according to an embodiment of the present invention, taken along line II' of the display device of FIG. 2A.

[0106] Referring to FIG. 5, the display device according to this embodiment includes a first substrate 100, a first pixel electrode 311, a second pixel electrode 312, a third pixel electrode 313, a pixel defining (defining) film 150, a sealing layer 400, a second substrate 900, a bank 500, an organic layer 610, a first color conversion layer 620, and a second color conversion layer 630.

[0107] The first substrate 100 includes glass, metal, or a polymer resin, such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. Of course, the first substrate 100 can be modified in various ways, such as having a multilayer structure including two layers including these polymer resins and a barrier layer including an inorganic material (such as silicon oxide, silicon nitride, or silicon oxynitride) interposed between the layers.

[0108] A first pixel electrode 311, a second pixel electrode 312, and a third pixel electrode 313 are located on the first substrate 100. Of course, in addition to the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313, a first thin film transistor 210, a second thin film transistor 220, and a third thin film transistor 230 electrically connected to the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313 may also be located on the first substrate 100. That is, as shown in FIG. 5 , the first pixel electrode 311 is electrically connected to the first thin film transistor 210, the second pixel electrode 312 is electrically connected to the second thin film transistor 220, and the third pixel electrode 313 is electrically connected to the third thin film transistor 230. The first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313 are located on a planarization layer 140 (described later) located on the first substrate 100.

[0109] The first thin film transistor 210 may include a first semiconductor layer 211 including amorphous silicon, polycrystalline silicon, an organic semiconductor material, or an oxide semiconductor material, a first gate electrode 213, a first source electrode 215a, and a first drain electrode 215b. The first gate electrode 213 may include various conductive materials and have various layered structures, for example, a Mo layer and an Al layer. In one embodiment, the first gate electrode 213 may have a Mo / Al / Mo layered structure. In other embodiments, the first gate electrode 213 may include a TiNx layer, an Al layer, and / or a Ti layer. The first source electrode 215a and the first drain electrode 215b may also include various conductive materials and have various layered structures, for example, a Ti layer, an Al layer, and / or a Cu layer. In one embodiment, the first source electrode 215a and the first drain electrode 215b may have a Ti / Al / Ti layered structure.

[0110] 5 shows the first thin film transistor 210 as including both the first source electrode 215a and the first drain electrode 215b, but the present invention is not limited thereto. For example, the source region of the first semiconductor layer 211 of the first thin film transistor 210 may be integrated with the drain region of the semiconductor layer of another thin film transistor, in which case the first thin film transistor 210 may not have the first source electrode 215a. Alternatively, the first source electrode 215a and / or the first drain electrode 215b may be part of a wiring.

[0111] To ensure insulation between the first semiconductor layer 211 and the first gate electrode 213, a gate insulating film 121 containing an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride may be interposed between the first semiconductor layer 211 and the first gate electrode 213. Furthermore, an interlayer insulating film 131 containing an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride may be disposed above the first gate electrode 213, and the first source electrode 215a and the first drain electrode 215b may be disposed on the interlayer insulating film 131. Such an insulating film containing an inorganic material may be formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD). This also applies to the following embodiments and their modifications.

[0112] A buffer layer 110 containing an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride may be interposed between the first thin film transistor 210 and the first substrate 100. The buffer layer 110 may increase the smoothness of the top surface of the first substrate 100 and prevent or minimize impurities from the first substrate 100 from penetrating into the first semiconductor layer 211 of the first thin film transistor 210.

[0113] The second thin film transistor 220 located in the second pixel PX2 may include a second semiconductor layer 221, a second gate electrode 223, a second source electrode 225a, and a second drain electrode 225b. The third thin film transistor 230 located in the third pixel PX3 may include a third semiconductor layer 231, a third gate electrode 233, a third source electrode 235a, and a third drain electrode 235b. The structures of the second thin film transistor 220 and the third thin film transistor 230 are the same as or similar to the structure of the first thin film transistor 210 located in the first pixel PX1, and therefore, description thereof will be omitted.

[0114] A planarization layer 140 may be disposed on the first thin film transistor 210. For example, as shown in FIG. 5, when a first light-emitting element LED1 including a first pixel electrode 311 is disposed on top of the first thin film transistor 210, the planarization layer 140 covering the first thin film transistor 210 may have a substantially flat upper surface, so that the first pixel electrode 311 of the first light-emitting element LED1 is positioned on the flat surface. The planarization layer 140 may include, for example, an organic material such as an acrylic resin, BCB, or HMDSO. Although the planarization layer 140 is shown as a single layer in FIG. 5, it may be multi-layered and may be modified in various ways.

[0115] The first pixel PX1 may include a first light-emitting element LED1 having a first pixel electrode 311, a counter electrode 330, and an intermediate layer 320 interposed therebetween, the intermediate layer 320 including an emission layer. As shown in FIG. 5, the first pixel electrode 311 may contact one of the first source electrode 215a and the first drain electrode 215b through a contact hole formed in the planarization layer 140, thereby electrically connecting to the first thin film transistor 210. The first pixel electrode 311 may include a transparent conductive layer made of a transparent conductive oxide such as ITO, In2O3, or IZO, and a reflective layer made of a metal such as Al or Ag. For example, the first pixel electrode 311 may have a three-layer structure of ITO / Ag / ITO.

[0116] The second pixel PX2 may also include a second light-emitting element LED2 having a second pixel electrode 312, a counter electrode 330, and an intermediate layer 320 interposed therebetween and including an emission layer. The third pixel PX3 may also include a third light-emitting element LED3 having a third pixel electrode 313, a counter electrode 330, and an intermediate layer 320 interposed therebetween and including an emission layer. The second pixel electrode 312 contacts one of the second source electrode 225a and the second drain electrode 225b through a contact hole formed in the planarization layer 140 or the like, and is electrically connected to the second thin film transistor 220. The third pixel electrode 313 contacts one of the third source electrode 235a and the third drain electrode 235b through a contact hole formed in the planarization layer 140 or the like, and is electrically connected to the third thin film transistor 230. The above description of the first pixel electrode 311 may be applied to the second pixel electrode 312 and the third pixel electrode 313.

[0117] The intermediate layer 320 may be located not only on the first pixel electrode 311 of the first pixel PX1 but also on the second pixel electrode 312 of the second pixel PX2 and the third pixel electrode 313 of the third pixel PX3. The intermediate layer 320 may have an integral shape across the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313. Of course, the intermediate layer 320 may be patterned and located on the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313, as necessary. The intermediate layer 320 may include at least one light-emitting unit. A more detailed description of the intermediate layer 320 will be provided later.

[0118] The counter electrode 330 on the intermediate layer 320 may also have a single shape across the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313. The counter electrode 330 may include a light-transmitting conductive layer formed of ITO, In2O3, or IZO, and may also include a semi-transparent film containing a metal such as Al, Li, Mg, Yb, or Ag. The counter electrode 330 may also be a semi-transparent film containing MgAg, AgYb, Yb / MgAg, or Li / MgAg.

[0119] A pixel defining (defining) layer 150 may be disposed on the planarization layer 140. The pixel defining (defining) layer 150 has pixel openings corresponding to the pixels PX. That is, the pixel defining (defining) layer 150 covers the ends of the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313, and has a first pixel opening 151 exposing a central portion of the first pixel electrode 311, a second pixel opening 152 exposing a central portion of the second pixel electrode 312, and a third pixel opening 153 exposing a central portion of the third pixel electrode 313. As shown in FIG. 5 , the pixel defining (defining) layer 150 increases the distance between the ends of the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313 and the counter electrode 330, thereby preventing arcs from occurring at the ends of the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313. Such pixel-defining films 150 may comprise, for example, polyimide or organic materials such as HMDSO.

[0120] The light-emitting elements LED1, LED2, and LED3, which include the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313, the intermediate layer 320 including the light-emitting layer, and the counter electrode 330, can easily deteriorate due to moisture, oxygen, etc. Therefore, in order to protect the light-emitting elements LED1, LED2, and LED3 from external moisture, oxygen, etc., the display device can include a sealing layer 400 that covers the organic light-emitting elements.

[0121] The encapsulation layer 400 includes at least one inorganic encapsulation layer and at least one organic encapsulation layer. For example, the encapsulation layer 400 may include a first inorganic encapsulation layer 410 and a second inorganic encapsulation layer 430, with an organic encapsulation layer 420 therebetween.

[0122] The first inorganic encapsulation layer 410 and the second inorganic encapsulation layer 430 may include one or more insulating materials such as silicon oxide (SiO2), silicon nitride (SiNx), silicon oxynitride (SiOxNy), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO2), and may be formed by chemical vapor deposition (CVD). The organic encapsulation layer 420 includes a polymer-based material. Examples of polymer-based materials include silicone-based resins, acrylic-based resins (e.g., polymethyl methacrylate, polyacrylic acid, etc.), epoxy-based resins, polyimide, and polyethylene.

[0123] The first inorganic encapsulation layer 410 formed by chemical vapor deposition has a substantially uniform thickness and therefore does not have a flat upper surface, as shown in Figure 5. However, the organic encapsulation layer 420 has a substantially flat upper surface, and therefore the second inorganic encapsulation layer 430 on the organic encapsulation layer 420 may also have a substantially flat upper surface.

[0124] The second substrate 900 is positioned above the first substrate 100 with the counter electrode 330 positioned therebetween. The second substrate 900 may include glass, metal, or a polymer resin. The second substrate 900 may include a polymer resin such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. Of course, the second substrate 900 may have a multilayer structure including two layers containing these polymer resins and a barrier layer containing an inorganic material (such as silicon oxide, silicon nitride, or silicon oxynitride) sandwiched between the layers. Various modifications are possible.

[0125] The bank 500 is located on the lower surface of the second substrate 900 in the direction toward the first substrate 100 (-z direction). The bank 500 has a first bank opening 501, a second bank opening 502, and a third bank opening 503. The bank openings of the bank 500 may correspond to light-emitting elements. Specifically, the first bank opening 501 of the bank 500 corresponds to the first pixel opening 151 exposing the first pixel electrode 311 of the pixel defining (defining) film 150, the second bank opening 502 of the bank 500 corresponds to the second pixel opening 152 exposing the second pixel electrode 312 of the pixel defining (defining) film 150, and the third bank opening 503 of the bank 500 corresponds to the third pixel opening 153 exposing the third pixel electrode 313 of the pixel defining (defining) film 150.

[0126] That is, when viewed in a direction perpendicular to the first substrate 100 (z-axis direction), the first bank opening 501 of the bank 500 overlaps with the first pixel opening 151 exposing the first pixel electrode 311 of the pixel defining (defining) layer 150, the second bank opening 502 of the bank 500 overlaps with the second pixel opening 152 exposing the second pixel electrode 312 of the pixel defining (defining) layer 150, and the third bank opening 503 of the bank 500 overlaps with the third pixel opening 153 exposing the third pixel electrode 313 of the pixel defining (defining) layer 150. As a result, when viewed in a direction perpendicular to the first substrate 100 (z-axis direction), the shape of each edge of the first bank opening 501 to the third bank opening 503 of the bank 500 may be the same as or similar to the shape of the edge of the corresponding pixel opening of the pixel defining (defining) layer 150. Thus, the first bank opening 501 of the bank 500 corresponds to the first pixel electrode 311, the second bank opening 502 of the bank 500 corresponds to the second pixel electrode 312, and the third bank opening 503 of the bank 500 corresponds to the third pixel electrode 313.

[0127] The bank 500 may be formed of various materials, such as an organic material such as acrylic, BCB, or HMDSO. If necessary, the bank 500 may include a photoresist material, which allows the bank 500 to be easily formed through processes such as exposure and development. During manufacturing, the bank 500 is formed on the second substrate 900, and the organic material layer 610, first color conversion layer 620, and second color conversion layer 630 (described below) are formed in the bank opening of the bank 500. The first substrate 100 and the second substrate 900 are then bonded together using a bonding material. In some embodiments, the bank 500 may have an inverse tapered shape relative to the second substrate 900 in a cross-sectional view, as shown in FIG. 5 .

[0128] An organic material layer 610 may be positioned within the first bank opening 501 of the bank 500 overlapping the first pixel electrode 311. The organic material layer 610 may be provided as a light-transmitting layer that transmits light emitted from the first light-emitting element LED1 without converting its color. The organic material layer 610 may include a first base resin 1151. A material for forming the organic material layer 610 is positioned within the first bank opening 501 of the bank 500 overlapping the first pixel electrode 311 by inkjet printing. The organic material layer 610 may not include scattering particles or quantum dots. Therefore, the first light L0 incident on the organic material layer 610 may be transmitted through the organic material layer 610 along a substantially straight path without being scattered or refracted by the scattering particles and / or quantum dots.

[0129] In some embodiments, the refractive index of the organic layer 610 can be similar to or substantially the same as the refractive index of the organic encapsulation layer 420 .

[0130] A first color conversion layer 620 may be positioned in the second bank opening 502 of the bank 500 overlapping the second pixel electrode 312. As described with reference to FIG. 4 , in some embodiments, the first color conversion layer 620 may be provided as a color conversion layer that converts at least a portion of the light emitted from the second light-emitting element LED2 into light with a wavelength belonging to a second wavelength band. The second wavelength band is, for example, about 625 nm to about 780 nm. The first color conversion layer 620 may include a second base resin 1161, first scattering particles 1163, and first quantum dots 1162.

[0131] In some embodiments, the first color conversion layer 620 may be provided as a translucent layer that transmits light emitted from the second light-emitting element LED2 without color conversion. For example, the first color conversion layer 620 may include the second base resin 1161 and the first scattering particles 1163, but may not include the first quantum dots 1162. The material for forming the first color conversion layer 620 may be disposed in the second bank opening 502 of the bank 500 that overlaps the second pixel electrode 312 by inkjet printing.

[0132] A second color conversion layer 630 may be positioned within the third bank opening 503 of the bank 500, overlapping with the third pixel electrode 313. As described with reference to FIG. 4 , in some embodiments, the second color conversion layer 630 may be provided as a color conversion layer that converts at least a portion of the light emitted from the third light-emitting element LED3 into light with a wavelength belonging to a third wavelength band. The third wavelength band may be, for example, about 495 nm to about 570 nm. For example, the second color conversion layer 630 may include a third base resin 1171, second scattering particles 1173, and second quantum dots 1172.

[0133] In some embodiments, the second color conversion layer 630 may be provided as a translucent layer that transmits light emitted from the third light-emitting element LED3 without converting its color. For example, the second color conversion layer 630 may include a third base resin 1171 and second scattering particles 1173, but may not include second quantum dots 1172. The material for forming the second color conversion layer 630 may be disposed in the third bank opening 503 of the bank 500 that overlaps the third pixel electrode 313 by inkjet printing.

[0134] The surface of the bank 500 facing the first substrate 100 (-z direction), the surface of the organic layer 610 facing the first substrate 100 (-z direction), the surface of the first color conversion layer 620 facing the first substrate 100 (-z direction), and the surface of the second color conversion layer 630 facing the first substrate 100 (-z direction) may be covered with a protective layer 510. The protective layer 510 may protect the organic layer 610, the first color conversion layer 620, and the second color conversion layer 630. The protective layer 510 may include an inorganic material such as silicon nitride, silicon oxide, or silicon oxynitride.

[0135] Color filter layers may be positioned between the organic layer 610, the first color conversion layer 620, and the second color conversion layer 630 and the second substrate 900. A first color filter 810 may be positioned on the organic layer 610, a second color filter 820 may be positioned on the first color conversion layer 620, and a third color filter 830 may be positioned on the second color conversion layer 630.

[0136] The first color filter 810 may be a layer that passes only first light L1 (see FIG. 3) having a wavelength between about 450 nm and about 495 nm. The second color filter 820 may be a layer that passes only second light L2 (see FIG. 3) having a wavelength between about 625 nm and about 780 nm. The third color filter 830 may be a layer that passes only third light L3 (see FIG. 3) having a wavelength between about 495 nm and about 570 nm. In some embodiments, the first color filter 810 may include scattering particles. In other embodiments, the first color filter 810, the second color filter 820, and the third color filter 830 may include scattering particles.

[0137] The first color filter 810, the second color filter 820, and the third color filter 830 can improve the color purity of light emitted to the outside and thereby improve the quality of the displayed image. In addition, the first color filter 810, the second color filter 820, and the third color filter 830 can reduce the proportion of external light incident on the display device from the outside that is reflected by the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313 and then emitted to the outside again, thereby reducing external light reflection. A black matrix may be disposed between the first color filter 810, the second color filter 820, and the third color filter 830, if necessary.

[0138] 5, the first color filter 810 has a second filter opening 802 corresponding to the first color conversion layer 620. The second filter opening 802 of the first color filter 810 may define the area of ​​the second pixel PX2. That is, the shape and size of the second pixel PX2 when viewed in a direction perpendicular to the first substrate 100 may be determined by the second filter opening 802 of the first color filter 810. The second color filter 820 fills at least the second filter opening 802 of the first color filter 810.

[0139] 5, the first color filter 810 has a third filter opening 803 corresponding to the second color conversion layer 630. The third filter opening 803 of the first color filter 810 may define the area of ​​the third pixel PX3. That is, the shape and size of the third pixel PX3 when viewed in a direction perpendicular to the first substrate 100 may be determined by the third filter opening 803 of the first color filter 810. The third color filter 830 fills at least the third filter opening 803 of the first color filter 810.

[0140] The third color filter 830 also has a first filter opening 801 corresponding to the organic layer 610. The first filter opening 801 of the third color filter 830 may define the area of ​​the first pixel PX1. That is, the shape and size of the first pixel PX1 when viewed in a direction perpendicular to the first substrate 100 may be determined by the first filter opening 801 of the third color filter 830. The first color filter 810 fills at least the first filter opening 801 of the third color filter 830.

[0141] In this way, the first color filter 810 defines the area of ​​the second pixel PX2 and the area of ​​the third pixel PX3 via the second filter opening 802 and the third filter opening 803, and therefore the first color filter 810 can be said to be a filter defining layer at the second pixel PX2 and the third pixel PX3. Similarly, the third color filter 830 defines the area of ​​the first pixel PX1 via the first filter opening 801, and therefore the third color filter 830 can be said to be a filter defining layer at the first pixel PX1. Of course, such a filter defining layer may also be called a pixel area defining layer.

[0142] Meanwhile, a portion where two or more color filters are overlapped can function as a black matrix. For example, if the first color filter 810 transmits only light with a wavelength between about 450 nm and about 495 nm, and the second color filter 820 transmits only light with a wavelength between about 625 nm and about 780 nm, then theoretically, no light can pass through both the first color filter 810 and the second color filter 820 in the overlapping portion of the first color filter 810 and the second color filter 820. Of course, by providing a portion where the first color filter 810, the second color filter 820, and the third color filter 830 all overlap between the first pixel PX1, the second pixel PX2, and the third pixel PX3, the color filters can function as a black matrix between the first pixel PX1, the second pixel PX2, and the third pixel PX3.

[0143] In some embodiments, a low refractive index layer 700 may be located between the first color filter 810, the second color filter 820, and the third color filter 830 and the bank 500, the organic layer 610, the first color conversion layer 620, and the second color conversion layer 630. During manufacturing, the low refractive index layer 700 may cover the first color filter 810, the second color filter 820, and the third color filter 830, with the bank 500 and the like formed on the upper surface thereof. The low refractive index layer 700 may include an inorganic material such as silicon oxide, silicon nitride, or silicon oxynitride and may be formed by a CVD method.

[0144] The first substrate 100 and the second substrate 900 are bonded together outside the display area DA using a bonding member such as a sealant. At this time, a filler 520 may be filled between the laminate on the first substrate 100 and the laminate on the second substrate 900, if necessary. For example, the filler 520 may be filled between the encapsulation layer 400 and the protective layer 510. The filler 520 may include a resin such as acrylic or epoxy.

[0145] Figure 6 is a cross-sectional view schematically illustrating a display device according to an embodiment of the present invention. Figure 6 is similar to Figure 5, but differs from Figure 5 in that an organic layer 610 is integrated with a filler 520. Hereinafter, a description of identical or similar components will be omitted, and differences will be mainly described.

[0146] Referring to FIG. 6, the display device according to this embodiment includes a first substrate 100, a first pixel electrode 311, a second pixel electrode 312, a third pixel electrode 313, a pixel defining (defining) film 150, a sealing layer 400, a second substrate 900, a bank 500, a first color conversion layer 620, and a second color conversion layer 630.

[0147] A first pixel electrode 311, a second pixel electrode 312, and a third pixel electrode 313 are located on the first substrate 100. Of course, in addition to the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313, a first thin film transistor 210, a second thin film transistor 220, and a third thin film transistor 230 electrically connected to the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313 may also be located on the first substrate 100.

[0148] A planarization layer 140 may be disposed on the first thin film transistor 210. The first pixel PX1 may include a first light emitting element LED1 having a first pixel electrode 311, a counter electrode 330, and an intermediate layer 320 interposed therebetween and including an emission layer. As shown in FIG. 5, the first pixel electrode 311 may contact one of the first source electrode 215a and the first drain electrode 215b through a contact hole formed in the planarization layer 140, and be electrically connected to the first thin film transistor 210.

[0149] The second pixel PX2 may also include a second light-emitting element LED2 having a second pixel electrode 312, a counter electrode 330, and an intermediate layer 320 interposed therebetween, the intermediate layer 320 including an emission layer. The third pixel PX3 may also include a third light-emitting element LED3 having a third pixel electrode 313, a counter electrode 330, and an intermediate layer 320 interposed therebetween, the intermediate layer 320 including an emission layer. The second pixel electrode 312 contacts one of the second source electrode 225a and the second drain electrode 225b through a contact hole formed in the planarization layer 140, etc., and is electrically connected to the second thin film transistor 220. The third pixel electrode 313 contacts one of the third source electrode 235a and the third drain electrode 235b through a contact hole formed in the planarization layer 140, etc., and is electrically connected to the third thin film transistor 230.

[0150] The intermediate layer 320 may be located not only on the first pixel electrode 311 of the first pixel PX1 but also on the second pixel electrode 312 of the second pixel PX2 and the third pixel electrode 313 of the third pixel PX3. Such an intermediate layer 320 has an integral shape across the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313. Of course, if necessary, the intermediate layer 320 may be patterned and located on the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313. The intermediate layer 320 may include at least one light-emitting unit.

[0151] The counter electrode 330 on the intermediate layer 320 may also have an integral shape across the first pixel electrode 311 , the second pixel electrode 312 and the third pixel electrode 313 .

[0152] A pixel defining (defining) film 150 may be disposed above the planarization layer 140. The pixel defining (defining) film 150 has pixel openings corresponding to the pixels PX. That is, the pixel defining (defining) film 150 covers the ends of the first pixel electrode 311, the second pixel electrode 312, and the third pixel electrode 313, and has a first pixel opening 151 exposing a central portion of the first pixel electrode 311, a second pixel opening 152 exposing a central portion of the second pixel electrode 312, and a third pixel opening 153 exposing a central portion of the third pixel electrode 313.

[0153] The encapsulation layer 400 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. For example, the encapsulation layer 400 may include a first inorganic encapsulation layer 410 and a second inorganic encapsulation layer 430, with an organic encapsulation layer 420 therebetween.

[0154] The second substrate 900 is positioned above the first substrate 100 with the counter electrode 330 positioned therebetween.

[0155] The bank 500 is located on the lower surface of the second substrate 900 in the direction toward the first substrate 100 (-Z direction). The bank 500 has a first bank opening 501, a second bank opening 502, and a third bank opening 503. The bank openings of the bank 500 may correspond to light-emitting elements. Specifically, the first bank opening 501 of the bank 500 corresponds to the first pixel opening 151 exposing the first pixel electrode 311 of the pixel defining (defining) film 150, the second bank opening 502 of the bank 500 corresponds to the second pixel opening 152 exposing the second pixel electrode 312 of the pixel defining (defining) film 150, and the third bank opening 503 of the bank 500 corresponds to the third pixel opening 153 exposing the third pixel electrode 313 of the pixel defining (defining) film 150.

[0156] A first color conversion layer 620 may be positioned in the second bank opening 502 of the bank 500 overlapping the second pixel electrode 312. As described with reference to FIG. 4 , in some embodiments, the first color conversion layer 620 may be provided as a color conversion layer that converts at least a portion of the light emitted from the second light-emitting element LED2 into light with a wavelength belonging to a second wavelength band. The second wavelength band is, for example, about 625 nm to about 780 nm. The first color conversion layer 620 may include a second base resin 1161, first scattering particles 1163, and first quantum dots 1162.

[0157] In some embodiments, the first color conversion layer 620 may be provided as a translucent layer that transmits light emitted from the second light-emitting element LED2 without color conversion. For example, the first color conversion layer 620 may include the second base resin 1161 and the first scattering particles 1163, but may not include the first quantum dots 1162. The material for forming the first color conversion layer 620 may be disposed in the second bank opening 502 of the bank 500 that overlaps the second pixel electrode 312 by inkjet printing.

[0158] A second color conversion layer 630 may be positioned within the third bank opening 503 of the bank 500, overlapping with the third pixel electrode 313. As described with reference to FIG. 4 , in some embodiments, the second color conversion layer 630 may be provided as a color conversion layer that converts at least a portion of the light emitted from the third light-emitting element LED3 into light with a wavelength belonging to a third wavelength band. The third wavelength band may be, for example, about 495 nm to about 570 nm. For example, the second color conversion layer 630 may include a third base resin 1171, second scattering particles 1173, and second quantum dots 1172.

[0159] In some embodiments, the second color conversion layer 630 may be provided as a translucent layer that transmits light emitted from the third light-emitting element LED3 without converting its color. For example, the second color conversion layer 630 may include a third base resin 1171 and second scattering particles 1173, but may not include second quantum dots 1172. The material for forming the second color conversion layer 630 may be disposed in the third bank opening 503 of the bank 500 that overlaps the third pixel electrode 313 by inkjet printing.

[0160] A color filter layer may be located between the first color conversion layer 620 and the second color conversion layer 630 and the second substrate 900. A first color filter 810 may be located above the first pixel electrode 311, a second color filter 820 may be located above the second pixel electrode 312, and a third color filter 830 may be located above the third pixel electrode 313.

[0161] The first color filter 810 may be a layer that passes only first light L1 (see FIG. 3) having a wavelength between about 450 nm and about 495 nm. The second color filter 820 may be a layer that passes only second light L2 (see FIG. 3) having a wavelength between about 625 nm and about 780 nm. The third color filter 830 may be a layer that passes only third light L3 (see FIG. 3) having a wavelength between about 495 nm and about 570 nm. In some embodiments, the first color filter 810 may include scattering particles. In other embodiments, the first color filter 810, the second color filter 820, and the third color filter 830 may include scattering particles.

[0162] A low refractive index layer 700 may be positioned between the first color filter 810, the second color filter 820, and the third color filter 830 and the bank 500, the first color conversion layer 620, and the second color conversion layer 630.

[0163] The surface of the bank 500 facing the first substrate 100 (-z direction), the surface of the first color conversion layer 620 facing the first substrate 100 (-z direction), and the surface of the second color conversion layer 630 facing the first substrate 100 (-z direction) may be covered with a protective layer 510. Within the first bank opening 501 of the bank 500 overlapping the first pixel electrode 311, the surface of the low refractive index layer 700 facing the first substrate 100 (-z direction) may be covered with the protective layer 510. That is, within the first bank opening 501 of the bank 500, the protective layer 510 and the low refractive index layer 700 may be in direct contact with each other.

[0164] The first substrate 100 and the second substrate 900 are bonded together outside the display area DA using a bonding material such as a sealant. At this time, a filler 520 may be filled between the laminate on the first substrate 100 and the laminate on the second substrate 900, if necessary. For example, the filler 520 may be filled between the encapsulation layer 400 and the protective layer 510. The filler 520 may fill the first bank opening 501 of the bank 500. In other words, the organic layer 610 located in the first bank opening 501 of the bank 500 may be provided integrally with the filler 520. The organic layer 610 may be a part of the filler 520. The filler 520 may include a resin such as acrylic or epoxy.

[0165] The filling material 520 may not include scattering particles and / or quantum dots. In other words, there may be almost no optical interfaces that scatter light inside the filling material 520. Therefore, the first light L0 incident inside the filling material 520 can be transmitted through the filling material 520 along a substantially straight path without being scattered or refracted by the scattering particles and / or quantum dots.

[0166] In some embodiments, the refractive index of the filler material 520 may be similar to or substantially the same as the refractive index of the organic encapsulation layer 420 .

[0167] In some embodiments, the second color conversion layer 630 may be omitted. In this case, the protective layer 510 and the low refractive index layer 700 may be in direct contact with each other within the third bank opening 503 of the bank 500. The filler material 520 may also fill the third bank opening 503 of the bank 500.

[0168] In some other embodiments, the first color conversion layer 620 and the second color conversion layer 630 may be omitted. In this case, the protective layer 510 and the low refractive index layer 700 may be in direct contact with each other within the second bank opening 502 and the third bank opening 503 of the bank 500. The filler material 520 may also fill the second bank opening 502 and the third bank opening 503 of the bank 500.

[0169] 7A, 7B, and 7C are cross-sectional views schematically illustrating an intermediate layer according to an embodiment of the present invention. The light emitting elements illustrated in FIGS. 7A, 7B, and 7C correspond to any one of the first light emitting element LED1 (see FIG. 5), the second light emitting element LED2 (see FIG. 5), and the third light emitting element LED3 (see FIG. 5).

[0170] Referring to FIG. 7A, a light emitting device according to an embodiment of the present invention may include a pixel electrode 310, a counter electrode 330, and an intermediate layer 320 between the pixel electrode 310 and the counter electrode 330.

[0171] The intermediate layer 320 may include a polymer or small molecule organic material that emits light of a predetermined color. The intermediate layer 320 may further include a metal-containing compound such as an organometallic compound, an inorganic material such as quantum dots, etc., in addition to various organic materials.

[0172] In some embodiments, the intermediate layer 320 may include an emissive layer and first and second functional layers below and above the emissive layer, respectively. The first functional layer may include, for example, a hole transport layer or a hole transport layer and a hole injection layer. The second functional layer is an optional component disposed on the emissive layer. The second functional layer may include an electron transport layer (ETL) and / or an electron injection layer (EIL). In this regard, FIG. 7A illustrates a first functional layer including a first emissive layer EML1, a first hole transport layer HTL1 disposed below the first emissive layer EML1, and a first hole injection layer HIL1, and a second functional layer including an electron transport layer ETL disposed on the first emissive layer EML1.

[0173] In one embodiment, the intermediate layer 320 may include two or more light-emitting units sequentially stacked between the pixel electrode 310 and the counter electrode 330, and a charge generation layer disposed between the two light-emitting units. When the intermediate layer 320 includes a light-emitting unit and a charge generation layer, the light-emitting device may be a tandem light-emitting device. The light-emitting device may have a stacked structure of multiple light-emitting units, thereby improving color order and light-emitting efficiency.

[0174] One light-emitting unit may include an emitting layer, and a first functional layer and a second functional layer below and above the emitting layer, respectively. The charge generation layer may include a negative charge generation layer and a positive charge generation layer. The negative charge generation layer and the positive charge generation layer may further increase the luminous efficiency of a tandem light-emitting device having multiple light-emitting layers. In some embodiments, the light-emitting layer may have a structure in which two or more layers selected from a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer are stacked in contact with or spaced apart from each other, or a structure in which two or more materials selected from a red light-emitting material, a green light-emitting material, and a blue light-emitting material are mixed without layer separation.

[0175] The negative charge generation layer may be an n-type charge generation layer. The negative charge generation layer may supply electrons. The negative charge generation layer may include a host and a dopant. The host may include an organic material. The dopant may include a metal material. The positive charge generation layer may be a p-type charge generation layer. The positive charge generation layer may supply holes. The positive charge generation layer may include a host and a dopant. The host may include an organic material. The dopant may include a metal material.

[0176] 7B , the organic light-emitting diode (OLED) may include a first light-emitting unit EU1 including a first light-emitting layer EML1 and a second light-emitting unit EU2 including a second light-emitting layer EML2, which are stacked in this order. A charge generation layer CGL may be provided between the first light-emitting unit EU1 and the second light-emitting unit EU2. For example, the organic light-emitting diode (OLED) may include a pixel electrode 310, a first light-emitting layer EML1, a charge generation layer CGL, a second light-emitting layer EML2, and a counter electrode 330, which are stacked in this order.

[0177] A first functional layer and a second functional layer may be included below and above the first light-emitting layer EML1, respectively. A first functional layer and a second functional layer may be included below and above the second light-emitting layer EML2, respectively. For example, the first light-emitting unit EU1 may include a first hole-transporting layer HTL1, and the second light-emitting unit EU2 may include a second hole-transporting layer HTL2. In some embodiments, either the first hole-transporting layer HTL1 or the second hole-transporting layer HTL2 may be omitted.

[0178] 7C , the light-emitting element may include a first light-emitting unit EU1, a second light-emitting unit EU2, a third light-emitting unit EU3, and a fourth light-emitting unit EU4, which are stacked in sequence. A first charge generation layer CGL1 may be provided between the first light-emitting unit EU1 and the second light-emitting unit EU2, a second charge generation layer CGL2 may be provided between the second light-emitting unit EU2 and the third light-emitting unit EU3, and a third charge generation layer CGL3 may be provided between the third light-emitting unit EU3 and the fourth light-emitting unit EU4. The first charge generation layer CGL1, the second charge generation layer CGL2, and the third charge generation layer CGL3 may include a negative charge generation layer (e.g., nCGL1, nCGL2, nCGL3) and a positive charge generation layer (e.g., pCGL1, pCGL2, pCGL3), respectively.

[0179] The first light-emitting unit EU1 includes a first light-emitting layer EML1, and may further include a first hole injection layer HIL1 and a first hole transport layer HTL1 between the first light-emitting layer EML1 and the pixel electrode 310. The first light-emitting unit EU1 may further include a first electron transport layer ETL1 between the first light-emitting layer EML1 and the negative charge generation layer nCGL1 of the first charge generation layer CGL1. In one embodiment, a p-doped layer may be further included between the first hole injection layer HIL1 and the first hole transport layer HTL1. The p-doped layer may be formed by doping the first hole injection layer HIL1 with a p-type doping material.

[0180] The second light-emitting unit EU2 includes a second light-emitting layer EML2, and may further include a second hole injection layer HIL2 and a second hole transport layer HTL2 between the positive charge generation layer pCGL1 of the first charge generation layer CGL1 and the second light-emitting layer EML2, and may further include a second electron transport layer ETL2 between the second light-emitting layer EML2 and the negative charge generation layer nCGL2 of the second charge generation layer CGL2.

[0181] The third light-emitting unit EU3 includes a third light-emitting layer EML3, and may further include a third hole-injection layer HIL3 and a third hole-transport layer HTL3 between the positive charge generation layer pCGL2 of the second charge generation layer CGL2 and the third light-emitting layer EML3, and may further include a third electron-transport layer ETL3 between the third light-emitting layer EML3 and the negative charge generation layer nCGL3 of the third charge generation layer CGL3.

[0182] The fourth light-emitting unit EU4 includes a fourth light-emitting layer EML4 and may further include a fourth hole-transporting layer HTL4 between the positive charge generation layer pCGL3 of the third charge generation layer CGL3 and the fourth light-emitting layer EML4, and may further include a fourth electron-transporting layer ETL4 between the fourth light-emitting layer EML4 and the counter electrode 330. The fourth electron-transporting layer ETL4 may be a single layer or a multilayer. In some embodiments, at least one of a hole-blocking layer and a buffer layer may further be included between the fourth light-emitting layer EML4 and the fourth electron-transporting layer ETL4. The hole-blocking layer may prevent holes from being injected into the fourth electron-transporting layer ETL4.

[0183] In some embodiments, some of the first hole transport layer HTL1, the second hole transport layer HTL2, the third hole transport layer HTL3, and the fourth hole transport layer HTL4 may be omitted.

[0184] In some embodiments, at least one of the first light-emitting layer EML1, the second light-emitting layer EML2, the third light-emitting layer EML3, and the fourth light-emitting layer EML4 may emit light having a wavelength that belongs to a wavelength band different from that of at least one other of the first light-emitting layer EML1, the second light-emitting layer EML2, the third light-emitting layer EML3, and the fourth light-emitting layer EML4. For example, the first light-emitting layer EML1, the second light-emitting layer EML2, and the third light-emitting layer EML3 may each emit light having a wavelength between about 400 nm and about 500 nm (e.g., blue light), and the fourth light-emitting layer EML4 may emit light having a wavelength between about 500 nm and about 600 nm (e.g., green light).

[0185] The light-emitting devices according to the embodiments of the present invention shown in Figures 7A, 7B, and 7C may include long-wavelength and short-wavelength components. Therefore, the emission spectrum of the first light emitted from the light-emitting device may have a more widely distributed emission peak. For example, the first light L0 emitted from the light-emitting device may have an x ​​value of 0.220 to 0.222 and a y value of 0.225 to 0.309 in the CIE color coordinate system. The thickness t320 of the intermediate layer 320 may be varied to adjust the emission spectrum of the first light L0. The thickness t320 of the intermediate layer 320 is the distance between a first interface between the pixel electrode 310 and the light-emitting unit disposed adjacent to the pixel electrode 310 and a second interface between the counter electrode 330 and the light-emitting unit disposed adjacent to the counter electrode 330.

[0186] In some embodiments, the emission spectrum of the first light L0 emitted from the light-emitting element may be adjusted by changing the thickness of the hole transport layer included in the intermediate layer 320. For example, as shown in FIG. 7A, the thickness t320 of the intermediate layer 320 may be adjusted by changing the first thickness t1 of the first hole transport layer HTL1. Alternatively, as shown in FIG. 7B, the thickness t320 of the intermediate layer 320 may be adjusted by changing the first thickness t1 of the first hole transport layer HTL1 and / or the second thickness t2 of the second hole transport layer HTL2.

[0187] 7C , when the interlayer 320 includes the first light-emitting unit EU1, the second light-emitting unit EU2, the third light-emitting unit EU3, and the fourth light-emitting unit EU4, and the first light-emitting unit EU1, the second light-emitting unit EU2, and the third light-emitting unit EU3 each emit light having a wavelength ranging from about 400 nm to about 500 nm, and the fourth light-emitting unit EU4 emits light having a wavelength ranging from about 500 nm to about 600 nm, the thickness t320 of the interlayer 320 may be about 3350 Å to about 3500 Å. In this case, the thickness t320 of the interlayer 320 can be adjusted by changing the first thickness t1 of the first hole-transporting layer HTL1, the second thickness t2 of the second hole-transporting layer HTL2, the third thickness t3 of the third hole-transporting layer HTL3, and / or the fourth thickness t4 of the fourth hole-transporting layer HTL4. Of course, the structure of the intermediate layer 320 may be modified in various ways other than the structures described above with reference to FIGS. 7A, 7B, and 7C.

[0188] 8A, 8B, 8C, and 8D are graphs showing the emission spectrum intensity of light emitted from a light emitting element included in a display device according to an embodiment of the present invention as a function of the measurement angle, and FIG. 9A, 9B, 9C, and 9D are graphs showing the emission spectrum intensity of light emitted from a light emitting element included in a display device according to a comparative example as a function of the measurement angle. FIG. 10 is a table showing the color coordinates, luminous efficiency, and white luminous efficiency of light emitted from each pixel of the display device as a function of the thickness of the intermediate layer.

[0189] 8A to 8D and 9A to 9C, the emission spectrum intensity of the light emitted by the first light emitting element LED1 (see FIG. 5) formed on the first substrate 100 (see FIG. 5) was measured at different angles before the first substrate 100 (see FIG. 5) and the second substrate 900 (see FIG. 5) were bonded together. That is, the direction perpendicular to the first substrate 100 (-z direction) was set as the reference (0°), and the emission spectrum intensity of the light emitted by the first light emitting element LED1 was measured while the tilt of the detector was increased by 5°.

[0190] In Figure 8A, the thickness t320 (see Figure 7C) of the intermediate layer 320 (see Figure 5) of the first light-emitting element LED1 (see Figure 5) is 3350 Å, in Figure 8B, the thickness t320 of the intermediate layer 320 of the first light-emitting element LED1 is 3400 Å, in Figure 8C, the thickness t320 of the intermediate layer 320 of the first light-emitting element LED1 is 3450 Å, and in Figure 8D, the thickness t320 of the intermediate layer 320 of the first light-emitting element LED1 is 3500 Å.

[0191] In FIG. 9A, the thickness of the intermediate layer of the first light-emitting element is 3550 Å, in FIG. 9B, the thickness of the intermediate layer of the first light-emitting element is 3600 Å, and in FIG. 9C, the thickness of the intermediate layer of the first light-emitting element is 3650 Å.

[0192] Referring to Figures 8A to 8D, it was found that the first light L0 (see Figure 3) emitted by the first light emitting element LED1 according to an embodiment of the present invention has a first peak value, which is a local maximum value, in the wavelength band of approximately 440 nm to approximately 460 nm, and that when the measurement angle of the emission spectrum intensity is changed by 5 degrees based on the direction perpendicular to the first substrate 100 (-z direction), the first peak value has a linear resonance structure in which it continuously decreases as the measurement angle increases.

[0193] Meanwhile, referring to Figures 9A to 9C, it was found that the light emitted from the first light-emitting element according to the comparative example has a diagonal resonance structure in which, when the measurement angle of the emission spectrum intensity is changed by 5° based on the direction perpendicular to the first substrate (-z direction), the first peak value increases and then decreases as the measurement angle increases.

[0194] For example, referring to FIG. 8A, the first peak value P0 when the measurement angle is 0° is approximately 0.205, the first peak value P10 when the measurement angle is 10° is approximately 0.174, the first peak value P20 when the measurement angle is 20° is approximately 0.112, the first peak value P30 when the measurement angle is 30° is approximately 0.066, the first peak value P40 when the measurement angle is 40° is approximately 0.042, the first peak value P50 when the measurement angle is 50° is approximately 0.039, and the first peak value P60 when the measurement angle is 60° is approximately 0.036, and these values ​​continuously decrease.

[0195] Referring to FIG. 8B, the first peak value P0 when the measurement angle is 0° is approximately 0.205, the first peak value P10 when the measurement angle is 10° is approximately 0.174, the first peak value P20 when the measurement angle is 20° is approximately 0.112, the first peak value P30 when the measurement angle is 30° is approximately 0.066, the first peak value P40 when the measurement angle is 40° is approximately 0.042, the first peak value P50 when the measurement angle is 50° is approximately 0.039, and the first peak value P60 when the measurement angle is 60° is approximately 0.036, and these values ​​continuously decrease.

[0196] Referring to FIG. 8B, the first peak value P0 when the measurement angle is 0° is approximately 0.278, the first peak value P10 when the measurement angle is 10° is approximately 0.244, the first peak value P20 when the measurement angle is 20° is approximately 0.159, the first peak value P30 when the measurement angle is 30° is approximately 0.088, the first peak value P40 when the measurement angle is 40° is approximately 0.056, the first peak value P50 when the measurement angle is 50° is approximately 0.042, and the first peak value P60 when the measurement angle is 60° is approximately 0.037, and the first peak value P20 decreases continuously.

[0197] Referring to FIG. 8C, the first peak value P0 when the measurement angle is 0° is approximately 0.316, the first peak value P10 when the measurement angle is 10° is approximately 0.279, the first peak value P20 when the measurement angle is 20° is approximately 0.186, the first peak value P30 when the measurement angle is 30° is approximately 0.099, the first peak value P40 when the measurement angle is 40° is approximately 0.059, the first peak value P50 when the measurement angle is 50° is approximately 0.043, and the first peak value P60 when the measurement angle is 60° is approximately 0.036, and the first peak value P20 decreases continuously.

[0198] Meanwhile, referring to FIG. 9A, the first peak value P0 when the measurement angle is 0° is approximately 0.466, the first peak value when the measurement angle is 5° is approximately 0.469, and the first peak value P10 when the measurement angle is 10° is approximately 0.466. It can be seen that the first peak value increases as the measurement angle increases from 0° to 5°, and then decreases as the measurement angle increases from 5° to 10°.

[0199] Referring to FIG. 9B, the first peak value P0 when the measurement angle is 0° is approximately 0.444, the first peak value P10 when the measurement angle is 10° is approximately 0.466, the first peak value P20 when the measurement angle is 20° is approximately 0.489, and the first peak value P30 when the measurement angle is 30° is approximately 0.390. It can be seen that the first peak value increases as the measurement angle increases from 0° to 20°, and then decreases as the measurement angle increases from 20° to 30°.

[0200] Referring to FIG. 9C, the first peak value P0 when the measurement angle is 0° is approximately 0.303, the first peak value P10 when the measurement angle is 10° is approximately 0.341, the first peak value P20 when the measurement angle is 20° is approximately 0.456, the first peak value P30 when the measurement angle is 30° is approximately 0.598, and the first peak value P40 when the measurement angle is 40° is approximately 0.505. It can be seen that the first peak value increases as the measurement angle increases from 0° to 30°, and then decreases as the measurement angle increases from 30° to 40°.

[0201] The table in Figure 10 shows the color coordinates, luminous efficiency, and white light emitting efficiency of light emitted from each pixel of the display device. Each pixel includes a light emitting element, a color conversion-transmitting layer, and a color filter. The color coordinates and luminous efficiency of light emitted from the light emitting element were measured after passing through the corresponding color conversion-transmitting layer and color filter. Here, R_x and R_y are the CIE color coordinate values ​​of the red pixel, G_x and G_y are the CIE color coordinate values ​​of the green pixel, and B_x and B_y are the CIE color coordinate values ​​of the blue pixel. R_Eff, G_Eff, and B_Eff are the luminous efficiency of the red pixel, the green pixel, and the blue pixel, respectively. B_con is the converted luminous efficiency of the blue pixel. W_Eff is the white light emitting efficiency.

[0202] 8A to 8D and 10, when the thickness t320 of the intermediate layer is about 3350 Å to about 3500 Å and the light emitting device has a linear resonance structure, the white light emitting efficiency of the display device is 22.4 or more. When the thickness t320 of the intermediate layer is about 3450 Å, the white light emitting efficiency of the display device is 22.7, which is the maximum value.

[0203] When the thickness t320 of the intermediate layer is about 3450 Å, the white light emission efficiency of the display device is converted to 100%. However, when the thickness t320 of the intermediate layer is increased to about 3550 Å or more and the light emitting device has a diagonal resonant structure as shown in Figures 9A to 9C, the white light emission efficiency is found to decrease to 96% or less. Similarly, when the thickness t320 of the intermediate layer is decreased to about 3300 Å or less, the white light emission efficiency is found to decrease to about 90.7% or less.

[0204] 11 is a graph showing the emission spectrum intensity of light emitted from the first pixel of a display device according to an embodiment of the present invention and the first pixel of a display device according to a comparative example. In FIG. 11, the first substrate 100 (see FIG. 5) and the second substrate 900 (see FIG. 5) are bonded together, and the light emitted from the first light-emitting element LED1 (see FIG. 5) is transmitted through the organic layer 610 (see FIG. 5) and the first color filter 810 (see FIG. 5), and the emission spectrum intensity of the emitted light is measured.

[0205] In FIG. 11, the thickness t320 of the intermediate layer included in the first pixel according to Example E1 is 3450 Å, and the thickness of the intermediate layer included in the first pixel according to Comparative Example C1 is 3700 Å.

[0206] The emission spectrum intensity of Comparative Example C1 has two separated peaks at about 456 nm and about 475 nm. In contrast, the emission spectrum intensity of Example E1 shows that the intensity of the peak at about 475 nm is reduced, and the peak at about 456 nm shifts to about 453 nm and merges into a single peak. When the emission spectrum intensity of the light emitted from the first pixel has separated peaks, as in Comparative Example C1, the converted luminous efficiency of the first pixel is low at 115.4. However, when the emission spectrum intensity of the light emitted from the first pixel has a single peak, as in Example E1, the converted luminous efficiency of the first pixel is high at 209.6.

[0207] Fig. 12 is a table showing the light source color coordinates and white light emission efficiency of a display device according to changes in the thickness of the intermediate layer, and Fig. 13 is a graph showing the white light emission efficiency of a display device according to changes in the thickness of the intermediate layer. In Fig. 12, CIEx and CIEy represent the X and Y values ​​of the color coordinates of the light source.

[0208] In Figures 12 and 13, before the first substrate 100 (see Figure 5) and the second substrate 900 (see Figure 5) are bonded together, the CIE color coordinates of the first light-emitting element LED1 (see Figure 5) formed on the first substrate 100 (see Figure 5) are measured, and then the first substrate 100 and the second substrate 900 are bonded together to measure the white light-emitting efficiency of the display device.

[0209] 12 and 13, when the thickness t320 of the intermediate layer is about 3350 Å to about 3500 Å and the light emitting device has a linear resonant structure, the light emitted from the first light emitting device has an x ​​value of about 0.220 to about 0.222 and a y value of about 0.225 to about 0.309 in the CIE color coordinates.

[0210] When the intermediate layer thickness t320 is about 3450 Å, the white light emitting efficiency of the display device reaches a maximum of 22.7, and when the intermediate layer thickness t320 increases to about 3550 Å or more, the white light emitting efficiency decreases to 21.8 or less. Similarly, when the intermediate layer thickness t320 decreases to about 3300 Å or less, the white light emitting efficiency drops sharply to 20.6 or less.

[0211] Although the present invention has been described with reference to the embodiments shown in the drawings, these are merely illustrative, and those skilled in the art will recognize that various modifications and equivalent embodiments are possible. Therefore, the true technical scope of protection of the present invention should be determined by the technical spirit of the claims.

Claims

1. a first pixel electrode and a second pixel electrode disposed on a substrate; an intermediate layer located on the first pixel electrode and the second pixel electrode, the intermediate layer emitting a first light; a counter electrode located on the intermediate layer; a first color filter located on the counter electrode and overlapping with the first pixel electrode in a plane; an organic layer located between the counter electrode and the first color filter; a second color filter located on the counter electrode and overlapping the second pixel electrode in a planar manner; The display device, wherein the first light has an X value of 0.220 to 0.222 and a Y value of 0.225 to 0.309 in CIE color coordinates, and the first light is transmitted through the organic layer along a substantially straight path.

2. the emission spectrum intensity of the first light has a first peak value that is a local maximum value in a wavelength band of 440 nm to 460 nm; 2. The display device of claim 1, wherein when a measurement angle of the emission spectrum intensity is changed relative to a direction perpendicular to the substrate, the first peak value continuously decreases as the measurement angle increases.

3. The display device of claim 1 , wherein the first color filter comprises scattering particles.

4. a sealing layer disposed on the counter electrode, the sealing layer including at least one inorganic sealing layer and at least one organic sealing layer; The display device of claim 1 , wherein the refractive index of the organic material layer is substantially the same as the refractive index of the at least one organic sealing layer.

5. a filler material positioned between the sealing layer and the first and second color filters; The display device of claim 4 , further comprising: a protective layer positioned between the organic layer and the filler.

6. a filler material positioned between the sealing layer and the first and second color filters; The display device according to claim 4 , wherein the organic layer is provided integrally with the filler.

7. the intermediate layer includes a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, and a fourth light-emitting layer that are superimposed on one another; the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer emit blue light; The display device of claim 1 , wherein the fourth light-emitting layer emits green light.

8. the first light emitting layer, the second light emitting layer, and the third light emitting layer each emit light having a wavelength ranging from 400 nm to 500 nm; The display device of claim 7, wherein the fourth light emitting layer emits light having a wavelength ranging from 500 nm to 600 nm.

9. the intermediate layer includes at least one hole injection layer; 7. The display device of claim 6, wherein a distance between a first interface between the first pixel electrode and the intermediate layer and a second interface between the intermediate layer and the counter electrode is 3350 Å to 3500 Å.

10. a first color conversion layer positioned between the counter electrode and the second color filter, the first color conversion layer converting the first light into light with a wavelength belonging to a second wavelength band; the first color filter transmits only light of a wavelength belonging to a first wavelength band; The display device of claim 1 , wherein the second color filter transmits only light having a wavelength belonging to a second wavelength band.

11. a third pixel electrode disposed on the substrate; 11. The display device of claim 10, further comprising: a third color filter positioned on the counter electrode so as to overlap the third pixel electrode in a plane, the third color filter transmitting only light having a wavelength belonging to a third wavelength band.

12. 12. The display device of claim 11, further comprising a second color conversion layer positioned between the counter electrode and the third color filter, the second color conversion layer converting the first light into light having a wavelength belonging to a third wavelength band.

13. The display device of claim 11 , wherein the third color filter comprises scattering particles.

14. a first pixel electrode and a second pixel electrode disposed on a first substrate; an intermediate layer located on the first pixel electrode and the second pixel electrode, the intermediate layer emitting a first light; a counter electrode located on the intermediate layer; a second substrate positioned above the first substrate with the opposing electrode therebetween; a bank located on a lower surface of the second substrate in a direction toward the first substrate, the bank having a first bank opening overlapping the first pixel electrode in a plan view and a second bank opening overlapping the second pixel electrode in a plan view; a first color filter interposed between the bank and the second substrate and overlapping the first pixel electrode in a plane; an organic layer located between the counter electrode and the first color filter; a second color filter interposed between the bank and the second substrate and overlapping the second pixel electrode in a plane; The display device, wherein the first light has an X value of 0.220 to 0.222 and a Y value of 0.225 to 0.309 in CIE color coordinates, and the first light is transmitted through the organic layer along a substantially straight path.

15. an emission spectrum of the first light having a first peak value that is a local maximum value in a wavelength band of 440 nm to 460 nm; The display device of claim 14, wherein when a measurement angle of the emission spectrum intensity is changed relative to a direction perpendicular to the first substrate, the first peak value continuously decreases as the measurement angle increases.

16. The display device of claim 14 , wherein the first color filter comprises scattering particles.

17. a sealing layer disposed on the counter electrode, the sealing layer including at least one inorganic sealing layer and at least one organic sealing layer; The display device of claim 14 , wherein the refractive index of the organic layer is substantially the same as the refractive index of the organic sealing layer.

18. the intermediate layer includes a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, and a fourth light-emitting layer that are superimposed on one another; the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer emit blue light; 15. The display device of claim 14, wherein the fourth light-emitting layer emits green light.

19. wherein the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer each emit light in a wavelength range of 400 nm to 500 nm; 20. The display device of claim 18, wherein the fourth light-emitting layer emits light in a wavelength range of 500 nm to 600 nm.

20. the intermediate layer includes at least one hole injection layer; 20. The display device of claim 18, wherein a distance between a first interface between the first pixel electrode and the intermediate layer and a second interface between the intermediate layer and the counter electrode is 3350 Å to 3500 Å.

21. a filler disposed between the first color filter and the counter electrode, and between the second color filter and the counter electrode; The display device according to claim 14 , wherein the organic layer is provided integrally with the filler.

22. 22. The display device of claim 21, wherein the filler material fills the first bank opening.

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