Display device and manufacturing method thereof

Abstract

The display device includes a display panel having a display area and a non-display area, and a viewing angle control layer including a plurality of viewing angle control patterns spaced apart by a predetermined distance on the display area, the viewing angle control pattern including a transparent insulating pattern and a multi-layered sidewall formed on a side of the transparent insulating pattern, the multi-layered sidewall including a first metal nitride layer, a second metal nitride layer, and a metal layer disposed between the first metal nitride layer and the second metal nitride layer, and the first metal nitride layer, the second metal nitride layer, and the metal layer may include Al or Ti.

Description

[Technical Field]

[0001] The present invention relates to a display device and a manufacturing method thereof. [Background technology]

[0002] Display devices have become increasingly important with the development of multimedia, and various types of display devices, such as liquid crystal displays (LCDs) and organic light-emitting diode displays (OLEDs), are now being used.

[0003] Among display devices, organic light emitting display devices display images using organic light emitting elements that generate light through the recombination of electrons and holes. Such display devices have the advantages of fast response speed, high brightness, wide viewing angle, and low power consumption.

[0004] Display devices display image information to users. Typically, display devices are developed to have a wide viewing angle so that users can view images on the display device from various angles. However, depending on the product to which the display device is applied, a wide viewing angle may actually have a negative impact on the product's characteristics, and for some display devices, a narrow viewing angle may be preferable.

[0005] For example, in the case of a vehicle navigation system, a wide viewing angle of the display device may cause light to be reflected on the windshield of the vehicle during night driving, which may adversely affect the driver's safe driving. Also, in the case of a computer or mobile phone, in situations where the displayed information should not be exposed to the public, a wide viewing angle of the display device may actually be contrary to the user's needs. Summary of the Invention [Problem to be solved by the invention]

[0006] The problem to be solved by the present invention is to provide a display device and a method for manufacturing the display device that provides a privacy function by preventing (or eliminating) side light.

[0007] The problems to be solved by the present invention are not limited to those mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0008] According to one embodiment of the present invention, there is provided a display device comprising: a display panel having a display area and a non-display area; and a viewing angle control layer including a plurality of viewing angle control patterns spaced apart by a predetermined distance on the display area, the viewing angle control pattern including a transparent insulating pattern and a multi-layered sidewall formed on a side of the transparent insulating pattern, the multi-layered sidewall including a first metal nitride layer, a second metal nitride layer, and a metal layer disposed between the first metal nitride layer and the second metal nitride layer, and the first metal nitride layer, the second metal nitride layer, and the metal layer may each include Al or Ti.

[0009] The first metal nitride layer, the second metal nitride layer, and the metal layer may each contain the same metal.

[0010] The multi-layer sidewall may further include a metal oxide layer.

[0011] The first metal nitride layer, the metal layer, the second metal nitride layer, and the metal oxide layer may be sequentially stacked in a direction away from the transparent insulating pattern.

[0012] The height of the viewing angle-control pattern may be formed in the same ratio as the separation distance, and the separation distance may be the distance between the central axis of a first viewing angle-control pattern and the central axis of a second viewing angle-control pattern adjacent to the first viewing angle-control pattern.

[0013] The first metal nitride layer and the second metal nitride layer may be formed to the same thickness, and the metal layer may be formed to a thickness greater than that of the first metal nitride layer.

[0014] The sidewall of the multilayer structure may further include a metal oxide layer, and the metal oxide layer may be formed to a thickness thinner than that of the first metal nitride layer.

[0015] The transparent insulating pattern has a cross section in the shape of an isosceles trapezoid with a longer base, and the base angle of the isosceles trapezoid may be in the range of 60 degrees to 89.5 degrees.

[0016] The display panel may include a substrate, pixels arranged on the substrate and including pixel electrodes, light-emitting layers, and common electrodes, a light-emitting element layer including a pixel defining film that defines the pixels, and a thin-film encapsulation layer arranged on the light-emitting element layer, and the viewing angle control layer may be arranged on the thin-film encapsulation layer.

[0017] The ratio of the width of the light-emitting layer to the width of the view angle control pattern may be in the range of 1:3 to 1:4.

[0018] The display device may further include a touch sensing layer between the thin film encapsulation layer and the viewing angle control layer.

[0019] The touch sensing layer may include a touch electrode, and at least a portion of the viewing angle control pattern may overlap the touch electrode.

[0020] The display device may further include a touch-sensing layer on the viewing angle control layer.

[0021] According to another embodiment of the present invention, a display device includes a display panel having a display area and a non-display area, and a viewing angle control layer including a plurality of viewing angle control patterns spaced apart by a predetermined distance on the display area, the viewing angle control pattern including a transparent insulating pattern and a multi-layered sidewall formed on a side of the transparent insulating pattern, the multi-layered sidewall including a first metal nitride layer, a second metal nitride layer, and a metal layer disposed between the first metal nitride layer and the second metal nitride layer, and the first metal nitride layer, the metal layer, and the second metal nitride layer may be AlN, Al, AlN, or TiN, Ti, or TiN, respectively.

[0022] The multi-layer sidewall may further include a metal oxide layer formed of Al2O3 or Ti2O3.

[0023] The display panel further includes a plurality of pixels arranged in the display area, each pixel including a pixel electrode, a light-emitting layer, and a common electrode, and the width of the pixel and the width of the viewing angle control pattern may be in the range of 1:3 to 1:4.

[0024] A method for manufacturing a display device according to another embodiment of the present invention includes the steps of forming a plurality of transparent insulating layer patterns spaced apart by a predetermined distance on a display panel; sequentially stacking a first metal nitride layer, a metal layer, and a second metal nitride layer on the display panel to cover the plurality of transparent insulating layer patterns, thereby forming a light absorbing layer; and anisotropically etching the light absorbing layer stacked on top of the plurality of transparent insulating layer patterns and between the plurality of transparent insulating layer patterns, wherein the first metal nitride layer, the second metal nitride layer, and the metal layer may include Al or Ti.

[0025] The forming of the light absorbing layer may include depositing a metal oxide layer on the second metal nitride layer.

[0026] Specific details of other embodiments are included in the detailed description and drawings. [Effects of the Invention]

[0027] According to an embodiment of the present invention, a display device can provide a privacy function by forming a viewing angle control pattern that absorbs light traveling in a lateral direction of a light emitting element layer.

[0028] The effects of the embodiments are not limited to the above-mentioned examples, and a wider variety of effects are included in this specification. [Brief explanation of the drawings]

[0029] [Figure 1] 1 is a perspective view of a display device according to an embodiment; [Figure 2] 1 is a plan view of a display device according to an embodiment. [Figure 3] FIG. 3 is a cross-sectional view taken along II' in FIG. 2. [Figure 4] FIG. 4 is a diagram illustrating an example of the display panel shown in FIG. 3 in detail. [Figure 5] 4 is a diagram illustrating an example of the touch sensor layer and the viewing angle control layer shown in FIG. 3 in detail. FIG. [Figure 6] 6 is a plan view showing an example of the sub-pixel shown in FIG. 4 and the first touch metal layer shown in FIG. 5. [Figure 7] FIG. 7 is a cross-sectional view taken along line II-II' in FIG. 6. [Figure 8] FIG. 8 is an enlarged view of region B in FIG. [Figure 9] 8 is an enlarged view of area B of FIG. 7 according to another embodiment. [Figure 10] 5A and 5B are diagrams illustrating the propagation of light incident on a viewing angle control pattern according to an embodiment; [Figure 11] 1 is a graph illustrating the reflectance characteristics of AlN relative to the light wavelength. [Figure 12] 2 is a flowchart illustrating steps of a method for manufacturing a display device according to an embodiment of the present invention. [Figure 13] 13A to 13C are cross-sectional views for explaining a method for manufacturing the display device of FIG. [Figure 14] 13A to 13C are cross-sectional views for explaining a method for manufacturing the display device of FIG. [Figure 15] 13A to 13C are cross-sectional views for explaining a method for manufacturing the display device of FIG. [Figure 16] 13A to 13C are cross-sectional views for explaining a method for manufacturing the display device of FIG. [Figure 17] 13A to 13C are cross-sectional views for explaining a method for manufacturing the display device of FIG. [Figure 18] 13A to 13C are cross-sectional views for explaining a method for manufacturing the display device of FIG. [Figure 19] 13A to 13C are cross-sectional views for explaining a method for manufacturing the display device of FIG. [Figure 20] 3 is a cross-sectional view taken along II' of FIG. 2 according to another embodiment of the present invention. [Figure 21] 21 is a cross-sectional view showing an example of a display device including the touch sensor layer and the viewing angle control layer shown in FIG. 20. FIG. [Figure 22] 3 is a cross-sectional view taken along II' of FIG. 2 according to still another embodiment of the present invention. [Figure 23] 23 is a cross-sectional view showing an example of a display device including the viewing angle control layer shown in FIG. 22. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0030] The advantages and features of the present invention, as well as methods for achieving them, will become clearer with reference to the following detailed embodiments in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and can be realized in various different forms. The present embodiments are provided solely for the purpose of complete disclosure of the present invention and to fully convey the scope of the invention to those skilled in the art to which the present invention pertains. The present invention is defined solely by the scope of the claims.

[0031] When elements or layers are referred to as being "on" another element or layer, this includes all cases where other layers or elements are directly on or between the other elements. The same reference numerals refer to the same components throughout the specification. The shapes, sizes, ratios, angles, numbers, etc. shown in the drawings to explain the embodiments are for illustrative purposes only, and the present invention is not limited to the illustrated matters.

[0032] Hereinafter, specific embodiments will be described with reference to the accompanying drawings.

[0033] 1 and 2 are perspective and plan views of a display device according to an embodiment of the present invention.

[0034] In this specification, "upper", "top", and "upper surface" refer to the upward direction relative to the display panel 100, i.e., the Z-axis direction, and "lower", "bottom", and "lower surface" refer to the downward direction relative to the display panel 100, i.e., the opposite direction to the Z-axis direction. Furthermore, "left", "right", "upper", and "lower" refer to directions when the display panel 100 is viewed from above. For example, "left" refers to the opposite direction to the X-axis direction, "right" refers to the X-axis direction, "upper" refers to the Y-axis direction, and "lower" refers to the opposite direction to the Y-axis direction.

[0035] 1 and 2, the display device 10 is a device for displaying moving or still images and can be used as a display screen for a variety of products, including portable electronic devices such as mobile phones, smartphones, tablet personal computers (PCs), smart watches, watch phones, mobile communication terminals, electronic organizers, e-books, portable multimedia players (PMPs), navigation systems, and ultra-mobile PCs (UMPCs), as well as televisions, notebook computers, monitors, billboards, and Internet of Things (IoT) devices. The display device 10 may be any one of an organic light-emitting display device, a liquid crystal display device, a plasma display device, a field emission display device, an electrophoretic display device, an electrowetting display device, a quantum dot light-emitting display device, and a micro LED display device. The following description will be focused on the case where the display device 10 is an organic light-emitting display device, but the present invention is not limited thereto.

[0036] The display device 10 according to an embodiment includes a display panel 100, a display driving circuit 250, a circuit board 300, and a touch driving circuit 400.

[0037] The display panel 100 may include a main area MA and a protruding area PA protruding from one side (for example, one edge) of the main area MA.

[0038] The main region MA may be formed as a rectangular plane having a short side in a first direction (e.g., the X-axis direction) and a long side in a second direction (e.g., the Y-axis direction) intersecting the first direction (e.g., the X-axis direction). The corner where the short side in the first direction (e.g., the X-axis direction) and the long side in the second direction (e.g., the Y-axis direction) intersect may be rounded or formed at a right angle to have a predetermined curvature. The planar shape of the display device 10 is not limited to a rectangle, but may be formed as another polygon, circle, or ellipse. The main region MA is formed flat, but is not limited thereto, and may include curved portions formed on the left and right side edges. In this case, the curved portions may have a constant curvature or a variable curvature.

[0039] The main area MA may include a display area DA where pixels are formed to display an image and a non-display area NDA which is a peripheral area of ​​the display area DA.

[0040] In the display area DA, not only pixels but also scan lines, data lines, and power lines connected to the pixels may be arranged. If the main area MA includes a curved portion, the display area DA may be arranged on the curved portion. In this case, images on the display panel 100 can be viewed from the curved portion.

[0041] The non-display area NDA is defined as an area extending from the outside of the display area DA to the edge of the display panel 100. A scan driver for applying scan signals to the scan lines and link lines connecting the data lines to the display driver circuit 250 may be arranged in the non-display area NDA.

[0042] The protruding region PA may protrude from one side of the main region MA. For example, the protruding region PA may protrude from the lower side of the main region MA as shown in Figures 1 and 2. The length of the protruding region PA in the first direction (X-axis direction) may be smaller than the length of the main region MA in the first direction (X-axis direction).

[0043] The protruding area PA may include a bending area BA and a pad area PDA. In this case, the pad area PDA is disposed on one side of the bending area BA, and the main area MA is disposed on the other side of the bending area BA. For example, the pad area PDA may be disposed below the bending area BA, and the main area MA may be disposed above the bending area BA.

[0044] The display panel 100 may be formed to be flexible so that it can bend, warp, bend, fold, or roll. Therefore, the display panel 100 may be bent in a thickness direction (e.g., the Z-axis direction) at the bending area BA. In this case, one surface of the pad area PDA of the display panel 100 faces upward before the display panel 100 is bent, but after the display panel 100 is bent, one surface of the pad area PDA of the display panel 100 faces downward. As a result, the pad area PDA is disposed below the main area MA and may overlap with the main area MA.

[0045] Pads electrically connected to the display driving circuit 250 and the circuit board 300 may be arranged in the pad area PDA of the display panel 100 .

[0046] The display driving circuit 250 outputs signals and voltages for driving the display panel 100. For example, the display driving circuit 250 may supply a data voltage to a data line. The display driving circuit 250 may also supply a power supply voltage to a power supply line and a scan control signal to a scan driver. The display driving circuit 250 is formed as an integrated circuit (IC) and mounted on the display panel 100 in a pad area PDA by, but not limited to, a COG (chip on glass) method, a COP (chip on plastic) method, or ultrasonic bonding method. For example, the display driving circuit 250 may be mounted on a circuit board 300.

[0047] The pads may include a display pad electrically connected to the display driver circuit 250 and a touch pad electrically connected to the touch lines.

[0048] The circuit board 300 may be attached onto the pads using an anisotropic conductive film, which allows the leads of the circuit board 300 to be electrically connected to the pads. The circuit board 300 may be a flexible printed circuit board (FPCB), a printed circuit board (PCB), or a flexible film such as a chip on film (COF).

[0049] The touch driving circuit 400 may be connected to the touch electrode of the touch sensor layer TSL of the display panel 100. The touch driving circuit 400 applies a driving signal to the touch electrode of the touch sensor layer TSL and measures the capacitance value of the touch electrode. The driving signal may be a signal having a plurality of driving pulses. The touch driving circuit 400 can not only determine whether a touch input is made according to the capacitance value, but also calculate the touch coordinate where the touch is made.

[0050] The touch driving circuit 400 is disposed on the circuit board 300. The touch driving circuit 400 is formed by an integrated circuit (IC) and mounted on the circuit board 300.

[0051] FIG. 3 is a cross-sectional view schematically showing an example of II' in FIG.

[0052] Referring to FIG. 3, the display panel 100 may include a substrate SUB, a thin film transistor layer TFTL disposed on the substrate SUB, a light emitting element layer EML, a thin film encapsulation layer TFEL, a touch sensor layer TSL, and a viewing angle control layer LCL.

[0053] The substrate SUB is made of an insulating material such as glass, quartz, or polymer resin. Examples of polymer materials include polyethersulfone (PES), polyacrylate (PA), polyarylate (PAR), polyetherimide (PEI), polyethylene napthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyallylate, polyimide (PI), polycarbonate (PC), cellulose triacetate (CAT), cellulose acetate propionate (CAP), or a combination thereof. Alternatively, the substrate SUB may include a metallic material.

[0054] The substrate SUB may be a rigid substrate or a flexible substrate that allows bending, folding, rolling, etc. If the substrate SUB is a flexible substrate, it is made of polyimide (PI), but is not limited thereto.

[0055] The thin film transistor layer TFTL is disposed on the substrate SUB. The thin film transistor layer TFTL may include not only thin film transistors of the pixels but also scan lines, data lines, power lines, scan control lines, and routing lines connecting pads and data lines. Each thin film transistor may include a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. For example, when the scan driver 110 is formed in the non-display area NDA of the display panel 100 as shown in FIG. 4, the scan driver 110 may include thin film transistors.

[0056] The thin film transistor layer TFTL is disposed in the display area DA and the non-display area NDA. For example, the thin film transistors, scan lines, data lines, and power supply lines of the pixels of the thin film transistor layer TFTL may be disposed in the display area DA. The scan control lines and link lines of the thin film transistor layer TFTL may be disposed in the non-display area NDA.

[0057] The light-emitting element layer EML is disposed on the thin film transistor layer TFTL. The light-emitting element layer EML may include pixels each including a first electrode, an emitting layer, and a second electrode, and a pixel defining layer that defines the pixel. The emitting layer may be an organic light-emitting layer containing an organic material. In this case, the emitting layer may include a hole transporting layer, an organic light-emitting layer, and an electron transporting layer. When a predetermined voltage is applied to the first electrode and a cathode voltage is applied to the second electrode via the thin film transistors of the thin film transistor layer TFTL, holes and electrons are transported to the organic light-emitting layer via the hole transporting layer and the electron transporting layer, respectively, and then combine with each other in the organic light-emitting layer to emit light. The pixels of the light-emitting element layer EML may be disposed in the display area DA.

[0058] A thin-film encapsulation layer TFEL is disposed on the light-emitting element layer EML. The thin-film encapsulation layer TFEL serves to prevent oxygen or moisture from permeating into the light-emitting element layer EML. To this end, the thin-film encapsulation layer TFEL may include at least one inorganic film. The inorganic film may be, but is not limited to, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The thin-film encapsulation layer TFEL also serves to protect the light-emitting element layer EML from foreign matter such as dust. To this end, the thin-film encapsulation layer TFEL may include at least one organic film. The organic film may be, but is not limited to, an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0059] The thin-film encapsulation layer TFEL may be disposed in both the display area DA and the non-display area NDA. For example, the thin-film encapsulation layer TFEL may be disposed so as to cover the light-emitting element layers EML in the display area DA and the non-display area NDA and to cover the thin-film transistor layer TFTL in the non-display area NDA.

[0060] The touch sensor layer TSL is disposed on the thin film encapsulation layer TFEL. By disposing the touch sensor layer TSL directly on the thin film encapsulation layer TFEL, the thickness of the display device 10 can be advantageously reduced compared to when a separate touch panel including the touch sensor layer TSL is attached on the thin film encapsulation layer TFEL.

[0061] The touch sensor layer TSL may include, for example, touch electrodes and touch lines connecting the touch electrode pads to the touch electrodes in order to sense a user's touch in a capacitive manner. For example, the touch sensor layer TSL may sense a user's touch in a self-capacitance manner or a mutual capacitance manner.

[0062] The touch electrodes of the touch sensor layer TSL are arranged in a touch sensor area TSA that overlaps the display area DA (for example, as shown in FIG. 5). The touch lines of the touch sensor layer TSL can be arranged in a touch peripheral area TPA that overlaps the non-display area NDA (for example, as shown in FIG. 5).

[0063] A viewing angle control layer LCL is disposed on the touch sensor layer TSL. The viewing angle control layer LCL is disposed so as to overlap the display area DA. The viewing angle control layer LCL may also be disposed so as to overlap the touch sensor area TSA. The viewing angle control layer LCL is a layer that absorbs light from the light emitting element layer EML that travels in a lateral direction rather than an upward direction (Z-axis direction) of the display panel 100.

[0064] A cover window may be further disposed on the view angle control layer LCL. In this case, the view angle control layer LCL and the cover window may be attached to each other by a transparent adhesive member such as an OCA (optically clear adhesive) film.

[0065] FIG. 4 is a diagram illustrating an example of the display panel shown in FIG. 3 in detail.

[0066] For convenience of explanation, FIG. 4 only shows the pixels P, scan lines SL, data lines DL, power lines PL, scan control lines SCL, scan driver 110, display driver circuit 250, and display pads DP in the display area DA.

[0067] 4, scan lines SL, data lines DL, power lines PL, and pixels P are arranged in a display area DA. The scan lines SL are aligned in a first direction (X-axis direction), and the data lines DL are aligned in a second direction (Y-axis direction) intersecting the first direction (X-axis direction). The power lines PL may include at least one line aligned in the second direction (Y-axis direction) with the data lines DL and a plurality of lines branching off from the at least one line in the first direction (X-axis direction).

[0068] Each pixel P may be connected to at least one of the scan lines SL, one of the data lines DL, and a power line PL. Each pixel P may include a thin film transistor including a driving transistor and at least one switching transistor, an organic light emitting diode, and a capacitor. When a scan signal is applied from the scan line SL, each pixel P receives a data voltage from the data line DL and emits light by supplying a driving current to the organic light emitting diode in accordance with the data voltage applied to the gate electrode.

[0069] The scan driver 110 is connected to the display driver circuit 250 via at least one scan control line SCL. Therefore, the scan driver 110 can receive a scan control signal from the display driver circuit 250. The scan driver 110 generates a scan signal in response to the scan control signal and supplies the scan signal to the scan line SL.

[0070] 4 shows that the scan driver 110 is formed in the non-display area NDA on the outer left side of the display area DA, but is not limited thereto. For example, the scan driver 110 may be formed in the non-display area NDA on the outer left side and the outer right side of the display area DA.

[0071] The display driver circuit 250 is connected to the display pad DP and receives digital video data and timing signals. The display driver circuit 250 converts the digital video data into analog positive / negative data voltages and supplies them to the data lines DL via link lines DLL. The display driver circuit 250 also generates and supplies scan control signals for controlling the scan driver 110 via scan control lines SCL. Pixels P to which data voltages are to be supplied are selected by the scan signals of the scan driver 110, and the data voltages are supplied to the selected pixels P. The display driver circuit 250 may be formed as an integrated circuit (IC) and attached to the substrate SUB using a chip on glass (COG), chip on plastic (COP), or ultrasonic bonding method.

[0072] 5 is a diagram showing an example of a detailed configuration of the touch sensor layer and the viewing angle control layer shown in FIG. 3, and FIG. 6 is a plan view showing an example of the subpixel shown in FIG. 4 and the first touch metal layer shown in FIG. 5.

[0073] For convenience of explanation, FIG. 5 shows only the touch electrodes TE and RE, the touch lines TL and RL, and the touch pad TP.

[0074] 5, the touch sensor layer TSL includes a touch sensor area TSA for sensing a user's touch and a touch peripheral area TPA disposed around the touch sensor area TSA. The touch sensor area TSA may overlap the display area DA, and the touch peripheral area TPA may overlap the non-display area NDA.

[0075] The touch electrodes TE and RE are arranged in the touch sensor area TSA. The touch electrodes TE and RE may include a sensing electrode RE electrically connected in a first direction (X-axis direction) and a driving electrode TE electrically connected in a second direction (Y-axis direction) intersecting the first direction (X-axis direction). Also, although FIG. 5 shows that the sensing electrode RE and the driving electrode TE are formed in a diamond-shaped planar shape, this is not limiting.

[0076] To prevent the sensing electrode RE and the driving electrode TE from short-circuiting each other at their intersections, the driving electrodes TE adjacent to each other in the second direction (Y-axis direction) may be electrically connected via a connection electrode BE. In this case, the driving electrode TE and the sensing electrode RE may be arranged on one layer, and the connection electrode BE may be arranged on a different layer from the driving electrode TE and the sensing electrode RE. The connection electrode BE may be connected to the driving electrode TE arranged on a different layer via a touch contact hole (e.g., TCNT in FIG. 21).

[0077] Furthermore, the sensing electrodes RE electrically connected in the first direction (X-axis direction) and the driving electrodes TE electrically connected in the second direction (Y-axis direction) are electrically insulated from each other.

[0078] The touch lines TL and RL are disposed in the touch peripheral area TPA and may include a sensing line RL connected to the sensing electrode RE and a first driving line TL1 and a second driving line TL2 connected to the driving electrode TE.

[0079] The sensing electrodes RE arranged on the right side of the touch sensor area TSA may be connected to the sensing line RL. For example, among the sensing electrodes RE electrically connected in the first direction (x-axis direction), the sensing electrode arranged on the right end may be connected to the sensing line RL. The sensing line RL may be connected to the first touch pad TP1. Thus, the touch drive circuit 400 may be electrically connected to the sensing electrodes RE.

[0080] The drive electrodes TE arranged on the lower side of the touch sensor area TSA may be connected to the first drive line TL1, and the drive electrodes TE arranged on the upper side of the touch sensor area TSA may be connected to the second drive line TL2. For example, among the drive electrodes TE electrically connected in the second direction (Y-axis direction), the drive electrode TE arranged on the lower end may be connected to the first drive line TL1, and the drive electrode TE arranged on the upper end may be connected to the second drive line TL2. The second drive line TL2 may be connected to the drive electrode TE on the upper side of the touch sensor area TSA via the outside of the left side of the touch sensor area TSA. The first drive line TL1 and the second drive line TL2 may be connected to the second touch pad TP2. As a result, the touch drive circuit 400 may be electrically connected to the drive electrodes TE.

[0081] The touch electrodes TE and RE are driven by a mutual capacitance method or a self-capacitance method. First, when the touch electrodes TE and RE are driven by the mutual capacitance method, a drive signal is supplied to the drive electrode TE via the first drive line TL1 and the second drive line TL2 to charge the mutual capacitance formed at the intersection of the sense electrode RE and the drive electrode TE. Then, a charge change amount of the sense electrode RE is measured via the sense line RL, and the presence or absence of a touch input is determined according to the charge change amount of the sense electrode RE. The drive signal may be a signal having a plurality of drive pulses.

[0082] When the touch electrodes TE and RE are driven in a self-capacitance manner, a drive signal is supplied to both the drive electrode TE and the sense electrode RE via the first drive line TL1, the second drive line TL2, and the sense line RL to charge the self-capacitance of the drive electrode TE and the sense electrode RE. Then, the amount of charge change in the self-capacitance of the drive electrode TE and the sense electrode RE is measured via the first drive line TL1, the second drive line TL2, and the sense line RL, and the presence or absence of a touch input is determined according to the amount of charge change in the self-capacitance.

[0083] The driving electrodes TE, the sensing electrodes RE, and the connection electrodes BE are formed as mesh-shaped electrodes as shown in FIG. 5. When the touch sensor layer TSL including the driving electrodes TE and the sensing electrodes RE is formed immediately on the thin-film encapsulation layer TFEL as shown in FIG. 3, the distance between the second electrodes of the light-emitting element layer EML and the driving electrodes TE or the sensing electrodes RE of the touch sensor layer TSL is relatively short, so that a very large parasitic capacitance may be formed between the second electrodes of the light-emitting element layer EML and the driving electrodes TE or the sensing electrodes RE of the touch sensor layer TSL. Therefore, in order to reduce the parasitic capacitance, it is preferable that the driving electrodes TE and the sensing electrodes RE be formed as mesh-shaped electrodes as shown in FIG. 5, rather than as non-patterned electrodes of a transparent oxide conductive layer such as ITO or IZO.

[0084] A first guard line GL1 is arranged outside the outermost sensing line RL among the sensing lines RL. Also, a first ground line GRL1 is arranged outside the first guard line GL1. For example, the first guard line GL1 may be arranged to the right of the sensing line RL that is arranged at the right end of the sensing lines RL, and the first ground line GRL1 may be arranged to the right of the first guard line GL1.

[0085] A second guard line GL2 is arranged between the innermost sensing line RL of the sensing lines RL and the first driving line TL1 arranged at the right end of the first driving lines TL1. The second guard line GL2 is also arranged between the rightmost first driving line TL1 of the first driving lines TL1 and the second ground line GRL2. A third guard line GL3 is also arranged between the innermost sensing line RL of the sensing lines RL and the second ground line GRL2. The second ground line GRL2 may be connected to the leftmost first touchpad of the first touchpad TP1 and the rightmost second touchpad of the second touchpad TP2.

[0086] A fourth guard line GL4 is arranged outside the second driving line TL2 that is arranged at the outermost position among the second driving lines TL2. Also, a third ground line GRL3 is arranged outside the fourth guard line GL4. For example, the fourth guard line GL4 may be arranged to the left and above the second driving line TL2 that is arranged at the left and upper ends of the second driving lines TL2, and the third ground line GRL3 may be arranged to the left and above the fourth guard line GL4.

[0087] A fifth guard line GL5 is arranged inside the second drive line TL2 that is arranged at the innermost position among the second drive lines TL2. For example, the fifth guard line GL5 may be arranged between the second drive line TL2 that is arranged at the right end of the second drive lines TL2 and the touch electrodes TE and RE.

[0088] 5, the first ground line GRL1, the second ground line GRL2, and the third ground line GRL3 are arranged on the outermost sides on the upper, left, and right sides of the display panel 100. A ground voltage is applied to the first ground line GRL1, the second ground line GRL2, and the third ground line GRL3. As a result, when static electricity is applied from the outside, the static electricity can be discharged to the first ground line GRL1, the second ground line GRL2, and the third ground line GRL3.

[0089] 5, the first guard line GL1 is disposed between the outermost sensing line RL and the first ground line GRL1, thereby minimizing the effect of voltage changes on the outermost sensing line RL. The second guard line GL2 is disposed between the innermost sensing line RL and the outermost first driving line TL1. This minimizes the effect of voltage changes on the innermost sensing line RL and the outermost first driving line TL1. The third guard line GL3 is disposed between the innermost sensing line RL and the second ground line GRL2, thereby minimizing the effect of voltage changes on the innermost sensing line RL. The fourth guard line GL4 is disposed between the outermost second driving line TL2 and the third ground line GRL3, thereby minimizing the effect of voltage changes on the second driving line TL2. The fifth guard line GL5 is arranged between the innermost second drive line TL2 and the touch electrodes TE and RE, and therefore can play a role in minimizing the mutual influence between the innermost second drive line TL2 and the touch electrodes TE and RE.

[0090] When the touch electrodes TE and RE are driven by a mutual capacitance method, a ground voltage may be applied to the first guard line GL1, the second guard line GL2, the third guard line GL3, the fourth guard line GL4, and the fifth guard line GL5. When the touch electrodes TE and RE are driven by a self-capacitance method, the same drive signal as that applied to the first drive line TL1, the second drive line TL2, and the sensing line RL may be applied to the first guard line GL1, the second guard line GL2, the third guard line GL3, the fourth guard line GL4, and the fifth guard line GL5.

[0091] 6, the sub-pixels may include a first sub-pixel RP, a second sub-pixel GP, and a third sub-pixel BP. Each of the first sub-pixels RP displays a first color, each of the second sub-pixels GP displays a second color, and each of the third sub-pixels BP displays a third color. The first color may be red, the second color may be green, and the third color may be blue, but is not limited thereto.

[0092] The display panel 100 can express a white gray level in units of pixels P. One pixel P is defined by one first sub-pixel RP, two second sub-pixels GP, and one third sub-pixel BP. The first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP defined as one pixel P may be arranged in a diamond shape as shown in FIG. 6.

[0093] The number of first sub-pixels RP and the number of third sub-pixels BP in the display panel 100 may be the same. The number of second sub-pixels GP in the display panel 100 may be twice the number of first sub-pixels RP and twice the number of third sub-pixels BP. Furthermore, the number of second sub-pixels GP in the display panel 100 may be the same as the sum of the number of first sub-pixels RP and the number of third sub-pixels BP.

[0094] 6 shows that the first subpixel RP, the second subpixel GP, and the third subpixel BP are formed in a diamond shape in a plan view, but this is not a limitation of the present invention. For example, the first subpixel RP, the second subpixel GP, and the third subpixel BP may be formed in a rectangular or square shape in a plan view, or may be formed in a polygonal shape other than a rectangle, a circle, or an ellipse. Furthermore, the shapes of the first subpixel RP, the second subpixel GP, and the third subpixel BP may be different from each other.

[0095] 6 shows that the sizes of the first subpixel RP, the second subpixel GP, and the third subpixel BP are the same in a plan view, but this is not a limitation of the present invention. For example, the sizes of the first subpixel RP, the second subpixel GP, and the third subpixel BP may be different in a plan view. For example, the size of the first subpixel RP may be larger than the size of the second subpixel GP, and the size of the third subpixel BP may be larger than the size of the second subpixel GP in a plan view. Furthermore, the size of the first subpixel RP may be substantially the same as or smaller than the size of the third subpixel BP in a plan view.

[0096] FIG. 7 is a cross-sectional view taken along line II-II' in FIG.

[0097] 7, a thin film transistor layer TFTL is formed on a substrate SUB. The thin film transistor layer TFTL includes a thin film transistor 120, a gate insulating film 130, an interlayer insulating film 140, a protective film 150, and a planarizing film 160.

[0098] A first buffer film BF1 is formed on one surface of the substrate SUB. The first buffer film BF1 is formed on one surface of the substrate SUB to protect the thin film transistor 120 and the organic light emitting layer 172 of the light emitting element layer EML from moisture that may penetrate through the substrate SUB, which is susceptible to moisture permeation. The first buffer film BF1 is made of a plurality of inorganic films alternately stacked. For example, the first buffer film BF1 may be formed of a multi-layer structure in which one or more inorganic films selected from the group consisting of silicon nitride, silicon oxynitride, silicon oxide, titanium oxide, and aluminum oxide are alternately stacked. The first buffer film BF1 may be omitted.

[0099] A thin film transistor 120 is formed on the first buffer film BF1. The thin film transistor 120 includes an active layer (e.g., a semiconductor layer) 121, a gate electrode 122, a source electrode 123, and a drain electrode 124. While FIG. 7 illustrates the thin film transistor 120 formed as a top gate type in which the gate electrode 122 is located on top of the active layer 121, it should be noted that this is not a limitation. For example, the thin film transistor 120 may also be formed as a bottom gate type in which the gate electrode 122 is located on the bottom of the active layer 121, or as a double gate type in which the gate electrode 122 is located both on top and bottom of the active layer 121.

[0100] An active layer 121 is formed on the first buffer film BF1. The active layer 121 may include polycrystalline silicon, single-crystalline silicon, low-temperature polycrystalline silicon, amorphous silicon, or an oxide semiconductor. For example, the oxide semiconductor may include a binary compound (ABx), a ternary compound (ABxCy), or a quaternary compound (ABxCyDz) containing indium, zinc, gallium, tin, titanium, aluminum, hafnium (Hf), zirconium (Zr), magnesium (Mg), or the like. For example, the active layer 121 may include ITZO (an oxide containing indium, tin, and titanium) or IGZO (an oxide containing indium, gallium, and tin). A light-shielding layer for blocking external light incident on the active layer 121 may be formed between the buffer film and the active layer 121.

[0101] A gate insulating film 130 is formed on the active layer 121. The gate insulating film 130 may be formed of an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0102] A gate electrode 122 and a gate line are formed on the gate insulating film 130. The gate electrode 122 and the gate line may be formed of a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0103] An interlayer insulating film 140 is formed on the gate electrode 122 and the gate line 124. The interlayer insulating film 140 may be formed of an inorganic film, such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0104] A source electrode 123 and a drain electrode 124 are formed on the interlayer insulating film 140. The source electrode 123 and the drain electrode 124 may be connected to the active layer 121 via contact holes that penetrate the gate insulating film 130 and the interlayer insulating film 140. The source electrode 123 and the drain electrode 124 may be formed of a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0105] A protective film 150 for insulating the thin film transistor 120 is formed on the source electrode 123 and the drain electrode 124. The protective film 150 may be formed of an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0106] A planarization film 160 is formed on the protective film 150 to flatten steps caused by the thin film transistor 120. The planarization film 160 may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0107] The light emitting element layer EML is formed on the thin film transistor layer TFTL. The light emitting element layer EML includes a light emitting element 170 and a pixel defining layer 180.

[0108] The light emitting elements 170 and the pixel defining layer 180 are formed on the planarization layer 160. Each of the light emitting elements 170 may include a first electrode 171, an organic light emitting layer 172, and a second electrode 173.

[0109] The first electrode 171 is formed on the planarization film 160. The first electrode 171 is connected to the source electrode 123 of the thin film transistor 120 via a contact hole that penetrates the protective film 150 and the planarization film 160.

[0110] In a top emission structure in which light is emitted toward the second electrode 173 from the organic light emitting layer 172, the first electrode 171 may be formed of a metal material with high reflectivity, such as a laminated structure of aluminum and titanium (Ti / Al / Ti), a laminated structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, or a laminated structure of an APC alloy and ITO (ITO / APC / ITO). The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

[0111] In a bottom emission structure in which light is emitted toward the first electrode 171 from the organic light emitting layer 172, the first electrode 171 may be made of a transparent metal material (TCO, Transparent Conductive Material) such as ITO or IZO that transmits light, or a semi-transmissive metal material (Semi-transmissive Conductive Material) such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). In this case, if the first electrode 171 is made of a semi-transmissive metal material, microcavities will be formed, resulting in higher light output efficiency.

[0112] The pixel defining layer 180 may be formed on the planarization layer 160 to define the first electrodes 171 and serve as a pixel defining layer for defining the sub-pixels RP, GP, and BP. The pixel defining layer 180 may be formed to cover the edges of the first electrodes 171. The pixel defining layer 180 may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0113] Each of the sub-pixels RP, GP, and BP is a region in which a first electrode 171, an organic light-emitting layer 172, and a second electrode 173 are sequentially stacked, and holes from the first electrode 171 and electrons from the second electrode 173 are combined with each other in the organic light-emitting layer 172 to emit light. Each of the sub-pixels RP, GP, and BP may include a light-emitting element 170.

[0114] An organic light-emitting layer 172 is formed on the first electrode 171 and the pixel defining layer 180. The organic light-emitting layer 172 may include an organic material and emit a predetermined color. For example, the organic light-emitting layer 172 may include a hole transporting layer, an organic material layer, and an electron transporting layer. In this case, the organic light-emitting layer 172 of the first sub-pixel RP may emit light of a first color, the organic light-emitting layer 172 of the second sub-pixel GP may emit light of a second color, and the organic light-emitting layer 172 of the third sub-pixel BP may emit light of a third color. The first color may be red, the second color may be green, and the third color may be blue, but is not limited to these.

[0115] In other embodiments, the organic light-emitting layer 172 of each of the sub-pixels RP, GP, and BP may emit white light, in which case the first sub-pixel RP may overlap with a color filter layer of a first color, the second sub-pixel GP may overlap with a color filter layer of a second color, and the third sub-pixel BP may overlap with a color filter layer of a third color.

[0116] The second electrode 173 is formed on the organic light emitting layer 172. The second electrode 173 is formed to cover the organic light emitting layer 172. The second electrode 173 may be a common layer formed in common to the sub-pixels RP, GP, and BP. A capping layer may be formed on the second electrode 173.

[0117] In the top emission structure, the second electrode 173 may be made of a transparent metal material (TCO, Transparent Conductive Material) such as ITO or IZO, or a semi-transmissive metal material such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). When the second electrode 173 is made of a semi-transmissive metal material, the light output efficiency is increased due to the microcavities.

[0118] In the lower light emitting structure, the second electrode 173 may be formed of a metal material with high reflectivity, such as a laminated structure of aluminum and titanium (Ti / Al / Ti), a laminated structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, or a laminated structure of an APC alloy and ITO (ITO / APC / ITO). The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

[0119] The thin-film encapsulation layer TFEL is formed on the light-emitting element layer EML. The thin-film encapsulation layer TFEL includes an encapsulation film 190.

[0120] The encapsulating film 190 is disposed on the second electrode 173. The encapsulating film 190 may include at least one inorganic film to prevent oxygen or moisture from penetrating into the organic light-emitting layer 172 and the second electrode 173. The encapsulating film 190 may also include at least one organic film to protect the light-emitting element layer EML from foreign matter such as dust. For example, the encapsulating film 190 may include a first inorganic film disposed on the second electrode 173, an organic film disposed on the first inorganic film, and a second inorganic film disposed on the organic film. The first inorganic film and the second inorganic film may be formed of, but are not limited to, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The organic film may be formed of, but is not limited to, an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, or the like.

[0121] A second buffer film BF2 is formed on the thin film encapsulation layer TFEL. The second buffer film BF2 is composed of a plurality of inorganic layers stacked alternately. For example, the second buffer film BF2 may be composed of a multilayer structure in which one or more inorganic layers selected from the group consisting of silicon nitride, silicon oxynitride, silicon oxide, titanium oxide, and aluminum oxide are alternately stacked. In one embodiment, the second buffer film BF2 may be omitted.

[0122] A touch sensor layer TSL is formed on the second buffer film BF2. The touch sensor layer TSL may include a drive electrode TE, a sensing electrode RE, a connection electrode BE, a first drive line TL1, a second drive line TL2, a sensing line RL, guard lines GL1, GL2, GL3, GL4, and GL5, and ground lines GRL1, GRL2, and GRL3, as shown in Fig. 5. For convenience of explanation, only the drive electrode TE of the touch sensor layer TSL is shown in Fig. 7.

[0123] A connection electrode BE is disposed on the second buffer film BF2. The connection electrode BE may be formed of a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0124] A first touch insulating film TINS1 is disposed on the connection electrode BE. The first touch insulating film TINS1 may be formed of an inorganic film, such as silicon nitride, silicon oxide, silicon oxynitride, titanium oxide, or aluminum oxide. In other embodiments, the first touch insulating film TINS1 may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0125] The driving electrode TE and the sensing electrode RE are disposed on the first touch insulating film TINS1. In addition to the driving electrode TE and the sensing electrode RE, the first driving line TL1, the second driving line TL2, the sensing line RL, the guard lines GL1, GL2, GL3, GL4, and GL5, and the ground lines GRL1, GRL2, and GRL3 may also be disposed on the first touch insulating film TINS1. For example, the driving electrode TE, the sensing electrode RE, the first driving line TL1, the second driving line TL2, the sensing line RL, the guard lines GL1, GL2, GL3, GL4, and GL5, and the ground lines GRL1, GRL2, and GRL3, excluding the connection electrode BE, are disposed on the same layer and made of the same material. The driving electrodes TE, sensing electrodes RE, first driving lines TL1, second driving lines TL2, sensing lines RL, guard lines GL1, GL2, GL3, GL4, and GL5, and ground lines GRL1, GRL2, and GRL3 may be formed of a laminated structure of aluminum and titanium (Ti / Al / Ti), a laminated structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a laminated structure of APC alloy and ITO (ITO / APC / ITO), but the embodiment of the present invention is not limited to this. Connection electrodes BE shown in FIG. 5 may be formed on the first touch insulating film TINS1. Each of the connection electrodes BE may be connected to the driving electrodes TE via a touch contact hole TCNT penetrating the touch insulating film TINS. The driving electrodes TE arranged in the second direction (Y-axis direction) may be electrically connected by the connection electrodes BE. The connection electrode BE is formed of a laminated structure of aluminum and titanium (Ti / Al / Ti), a laminated structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a laminated structure of APC alloy and ITO (ITO / APC / ITO), but the embodiment of the present invention is not limited to this.

[0126] A second touch insulating film TINS2 is formed on the driving electrodes TE and the sensing electrodes RE. The second touch insulating film TINS2 can flatten steps formed by the driving electrodes TE, the sensing electrodes RE, and the connection electrodes BE. The second touch insulating film TINS2 can be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0127] The viewing angle control layer LCL is disposed on the touch sensor layer TSL, for example, on the second touch insulating film TINS2. The viewing angle control layer LCL is a layer that absorbs light from the sub-pixels RP, GP, and BP that travels laterally rather than upward (in the Z-axis direction). The viewing angle control layer LCL may include a viewing angle control pattern 200 and a planarization layer 230.

[0128] The viewing angle control pattern 200 is disposed on the touch insulating film TINS ​​(for example, the second touch insulating film TINS2). At least a portion of the viewing angle control pattern 200 may overlap the touch electrodes TE and RE.

[0129] The viewing angle control pattern 200 may be formed of an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0130] The view angle control patterns 200 are arranged at regular intervals in a first direction (X-axis). The view angle control patterns 200 have sidewalls with low reflectivity and high light absorption. The angle formed by the touch insulating film TINS ​​and the inner wall of the view angle control pattern 200 may be approximately 90 degrees or less, and the inner wall may be formed in a positive tapered shape. The angle formed by the inner wall of the view angle control pattern 200 is preferably closer to 90 degrees because it can prevent loss of light from the light emitting element layer EML traveling toward the upper direction of the display panel 100 (Z-axis direction).

[0131] The higher the height d1 of the sidewall of the viewing angle control pattern 200, the higher the proportion of light absorbed by the sidewall of the viewing angle control pattern 200 among the light from the subpixels RP, GP, and BP. Therefore, in order to increase the light absorption efficiency of the subpixels RP, GP, and BP, the height d1 of the viewing angle control pattern 200 may be formed to be approximately 5 μm to 12 μm or more, and in one embodiment, it is preferably formed to be approximately 10 μm. The height d1 of the viewing angle control pattern 200 refers to the distance from the bottom surface to the top surface of the viewing angle control pattern 200.

[0132] The top surface of the view angle control pattern 200 is light transmissive.

[0133] Furthermore, the greater the number of viewing angle control patterns 200, the greater the light absorption efficiency of the sub-pixels RP, GP, and BP. However, the greater the number of viewing angle control patterns 200 on the sub-pixels RP, GP, and BP, the lower the proportion of light traveling upward (in the Z direction) of the sub-pixels RP, GP, and BP due to the thickness of the sidewalls of the viewing angle control patterns 200. Therefore, the separation distance d2 (e.g., distance from center to center) of the viewing angle control patterns 200 can be formed at the same ratio as the height d1 of the viewing angle control patterns 200. For example, if the height d1 of the viewing angle control patterns 200 is 10 μm, the separation distance d2 of the viewing angle control patterns 200 is also 10 μm. Here, the separation distance of the viewing angle control patterns 200 may be the distance from the central axis of a first viewing angle control pattern 200 to the central axis of a second viewing angle control pattern 200 adjacent to the first viewing angle control pattern 200.

[0134] At least a portion of the viewing angle control pattern 200 may overlap the drive electrodes TE or the sense electrodes RE.

[0135] The planarization layer 230 may be formed on the touch insulating film TINS ​​and the viewing angle control pattern 200, as shown in FIG. 7. The planarization layer 230 serves to planarize steps caused by the viewing angle control pattern 200. For this reason, it is preferable that the height d3 of the planarization layer 230 is the same as or thicker than the height d1 of the viewing angle control pattern 200. For example, the height d3 of the planarization layer 230 (e.g., the height measured from the touch insulating film TINS) may be approximately 5 μm to 13 μm. The height d3 of the planarization layer 230 refers to the maximum thickness of the high refractive index planarization layer 230.

[0136] FIG. 8 is an enlarged view of area B in FIG. 7, and FIG. 9 is an enlarged view of area B in FIG. 7 according to another embodiment.

[0137] FIG. 10 is a graph for explaining the progression of light incident on a viewing angle control pattern according to an embodiment, and FIG. 11 is a diagram for explaining the reflectance characteristics of AlN with respect to the light wavelength.

[0138] Referring to FIGS. 7 and 8, the view angle control layer LCL may include a view angle control pattern 200 and a planarization layer 230.

[0139] A plurality of viewing angle control patterns 200 can overlap one sub-pixel GP.

[0140] The ratio of the width of the sub-pixel GP to the width of the viewing angle control pattern 200 may be about 1:3 to 1:4.

[0141] In addition, the ratio of the width of the organic light emitting layer 172 to the width of the view angle control pattern 200 may be about 1:3 to 1:4.

[0142] The view angle control pattern 200 includes a transparent insulating layer pattern 210 and a sidewall 220 formed of multiple layers.

[0143] The transparent insulating layer pattern 210 may be formed of an inorganic film, for example, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0144] The sidewall 220 is disposed on the side of the transparent insulating layer pattern 210. The sidewall 220 may be formed of multiple layers including, from the inside to the outside, a first metal nitride layer 221, a metal layer 222, a second metal nitride layer 223, and a metal oxide layer 224.

[0145] The first metal nitride layer 221 is a layer disposed at the innermost side of the view angle control pattern 200, and has low reflectance characteristics and high light absorption function in the visible light region a (for example, as shown in FIG. 11). The first metal nitride layer 221 can be formed of, for example, AlN or TiN.

[0146] The thickness of the first metal nitride layer 221 may be about 400 Å to 700 Å, for example, about 600 Å.

[0147] As shown in FIG. 11, it can be seen that AlN has a relatively low reflectance characteristic of about 5% or less in the visible light region a band having an energy of 1 eV to 4 eV.

[0148] Referring again to Figures 7 and 8, the metal layer 222 has a light absorption function as a layer for destructive interference between the first reflected light L12 by the first metal nitride layer 221 and the second reflected light L22 reflected by the metal layer 222 (as shown, for example, in Figure 10).

[0149] The metal layer 222 may be formed of, for example, Al or Ti.

[0150] The thickness of the metal layer 222 may be greater than the thickness of the first metal nitride layer 221 .

[0151] The thickness of the metal layer 222 may be in the range of approximately 700 Å to 1000 Å, and in one example, may be approximately 800 Å.

[0152] The second metal nitride layer 223 has a relatively low reflectance characteristic for all wavelengths of visible light, and has a relatively high light absorption function.

[0153] The second metal nitride layer 223 may be formed of the same material as the first metal nitride layer 221 .

[0154] The second metal nitride layer 223 may be made of, for example, AlN or TiN.

[0155] The thickness of the second metal nitride layer 223 may be the same as the thickness of the first metal nitride layer 221 .

[0156] The thickness of the second metal nitride layer 223 may be in the range of about 400 Å to 700 Å, for example, 600 Å.

[0157] The metal oxide layer 224 serves as the outermost layer of the view angle control pattern 200 and protects the sidewall 220 of the view angle control pattern 200. The metal oxide layer 224 may be made of, for example, aluminum oxide (Al2O3).

[0158] The thickness of the metal oxide layer 224 may be less than the thickness of the first metal nitride layer 221 .

[0159] The thickness of the metal oxide layer 224 may be in the range of approximately 100 Å to 300 Å, and in one example, may be approximately 200 Å.

[0160] As shown in FIG. 9, in one embodiment, the metal oxide layer 224 may be omitted.

[0161] The first metal nitride layer 221, the metal layer 222, and the second metal nitride layer 223 may contain the same metal. For example, the first metal nitride layer 221, the metal layer 222, and the second metal nitride layer 223 may be formed of AlN, Al, and AlN, respectively.

[0162] 10, the first metal nitride layer 221 absorbs the first light L11 incident into the view angle control pattern 200. Most of the first light L11 incident on the first metal nitride layer 221 is absorbed by the first metal nitride layer 221. The remaining light that is not absorbed by the first metal nitride layer 221 is reflected as a first reflected light L12. The remaining light that is not reflected or absorbed by the first metal nitride layer 221 is a second light L21 that travels to the metal layer 222.

[0163] Most of the second reflected light L22 incident on the metal layer 222 is absorbed. The remaining light not absorbed by the metal layer 222, that is, the second reflected light L22, is reflected. The first reflected light L12 and the second reflected light L22 may cancel each other out and disappear. Therefore, when light from the light emitting device layer EML traveling in a lateral direction rather than an upward direction (Z-axis direction) of the display panel 100 is incident on a sidewall of the view angle-control pattern 200, most of the light may be absorbed or disappear due to destructive interference.

[0164] The second metal nitride layer 223 absorbs the third light L31 incident from outside the view angle control pattern 200. The remaining light that is not absorbed by the second metal nitride layer 223 is reflected as a third reflected light L32. The remaining light that is not reflected or absorbed by the second metal nitride layer 223, namely a fourth light L41, travels to the metal layer 222.

[0165] Most of the fourth light L41 incident on the metal layer 222 is absorbed. The remaining light that is not absorbed by the metal layer 222, that is, the fourth reflected light L42, is reflected. The third reflected light L32 and the fourth reflected light L42 may cancel each other out and disappear. This removes light that exceeds the viewing angle range, thereby improving the front brightness.

[0166] 12 is a flowchart illustrating steps in a method for manufacturing a display device according to an embodiment of the present invention, and FIGS. 13 to 19 are cross-sectional views illustrating steps in a method for manufacturing a display device according to an embodiment of the present invention.

[0167] A plurality of transparent insulating layer patterns are formed on the display panel (S110 in FIG. 12).

[0168] Referring to FIG. 13, according to an embodiment, a transparent insulating layer pattern 210 is formed on the touch insulating film TINS.

[0169] The transparent insulating layer pattern 210 may be formed using a mask or a hard mask.

[0170] The transparent insulating layer pattern 210 is formed by a photolithography process. For example, after a material for forming the transparent insulating layer pattern 210 is coated on the touch insulating film TINS, the material for forming the transparent insulating layer pattern 210 is selectively etched using a mask for forming a pattern to form the transparent insulating layer pattern 210. In the case of a photolithography process for a mask, the size and position of the pattern can be easily adjusted, and the transparent insulating layer pattern 210 can be formed using a hard mask.

[0171] The cross section of the transparent insulating layer pattern 210 may be an isosceles trapezoid whose base is in contact with the touch insulating film TINS. The base angle of the isosceles trapezoid may be selected between about 60 degrees and 89.5 degrees.

[0172] 14 and 17, a first metal nitride layer 221, a metal layer 222, a second metal nitride layer 223, and a metal oxide layer 224 may be sequentially stacked to cover the transparent insulating layer pattern 210 (S120 in FIG. 12).

[0173] The first metal nitride layer 221, the metal layer 222, the second metal nitride layer 223, and the metal oxide layer 224 may be formed by methods such as electron beam evaporation, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporation, sputtering, metal organic chemical vapor deposition (MOCVD), etc., and in one embodiment, these layers are formed by, but are not limited to, metal organic chemical vapor deposition (MOCVD).

[0174] The first metal nitride layer 221, the metal layer 222, the second metal nitride layer 223, and the metal oxide layer 224 may contain the same metal. For example, the first metal nitride layer 221, the metal layer 222, the second metal nitride layer 223, and the metal oxide layer 224 may be formed of AlN, Al, AlN, and Al2O3, respectively.

[0175] In other embodiments, the metal oxide layer 224 may not be deposited.

[0176] Referring to Figures 18 and 19, the first metal nitride layer 221, the metal layer 222, the second metal nitride layer 223 and the metal oxide layer 224 stacked between the top surface UP of the transparent insulating layer pattern 210 and the transparent insulating layer pattern 210 BT are removed (S130 in Figure 12).

[0177] The light absorbing layer including the first metal nitride layer 221, the metal layer 222, the second metal nitride layer 223, and the metal oxide layer 224 is etched by an anisotropic etching method. For example, the light absorbing layer formed on the vertical (or nearly vertical) surfaces of the transparent insulating layer pattern 210 is not etched, but the light absorbing layer formed between the horizontal surfaces of the transparent insulating layer pattern 210 and the transparent insulating layer pattern 210 is etched.

[0178] As an example, a large voltage difference is formed in a third direction (e.g., vertical direction) without using a separate mask, and the etching material etches the first metal nitride layer 221, the metal layer 222, the second metal nitride layer 223, and the metal oxide layer 224. In this case, the etching material moves in the third direction, for example, from top to bottom, by controlling the voltage, and can etch, for example, selectively etch, the light absorption layer including the first metal nitride layer 221, the metal layer 222, the second metal nitride layer 223, and the metal oxide layer 224.

[0179] The etching material is a material that can etch all of the first metal nitride layer 221, the metal layer 222, the second metal nitride layer 223, and the metal oxide layer 224.

[0180] As a result, as shown in FIG. 18, the first metal nitride layer 221, metal layer 222, second metal nitride layer 223 and metal oxide layer 224, i.e., the light absorption layers, stacked between the top surface UP of the transparent insulating layer pattern 210 and the transparent insulating layer pattern 210 BT, which are arranged in a horizontal plane defined by the first and second directions, are removed, whereas the first metal nitride layer 221, metal layer 222, second metal nitride layer 223 and metal oxide layer 224, which are arranged in a vertical plane defined by the third direction, are not removed.

[0181] If the metal oxide layer 224 is not deposited in step S120, the light absorption layers are the first metal nitride layer 221, the metal layer 222, and the second metal nitride layer 223, and in step S130, the first metal nitride layer 221, the metal layer 222, and the second metal nitride layer 223, which are the light absorption layers, are anisotropically etched.

[0182] Figure 20 is a cross-sectional view taken along II' in Figure 2 according to another embodiment of the present invention, and Figure 21 is a cross-sectional view showing an example of a display device including a touch sensor layer and a viewing angle control layer shown in Figure 20.

[0183] The embodiment of FIGS. 20 and 21 differs from the display devices shown in FIGS. 3 and 7 in the position of the view angle control layer LCL.

[0184] 20 and 21, the display device 11 may include a substrate SUB, a thin film transistor layer TFTL arranged on the substrate SUB, a light emitting element layer EML, a thin film encapsulation layer TFEL, a viewing angle control layer LCL, and a touch sensor layer TSL, in that order.

[0185] The viewing angle control layer LCL may be located under the first touch insulating film TINS1. The viewing angle control layer LCL may be disposed between the thin-film encapsulation layer TFEL and the first touch insulating film TINS1. For example, the viewing angle control layer LCL may be formed on a second buffer film BF2 formed on the thin-film encapsulation layer TFEL.

[0186] 22 is a cross-sectional view taken along II' in FIG. 2 according to still another embodiment of the present invention, and FIG. 23 is a cross-sectional view showing an example of a display device including the viewing angle control layer shown in FIG.

[0187] The embodiments of FIGS. 22 and 23 differ from the display devices of FIGS. 3 and 7 in that the touch insulating film TINS ​​is omitted.

[0188] 22 and 23, the display device 12 may include a substrate SUB, a thin-film transistor layer TFTL disposed on the substrate SUB, a light-emitting element layer EML, a thin-film encapsulation layer TFEL, and a view-angle control layer LCL, in that order. The view-angle control layer LCL may be disposed on the thin-film encapsulation layer TFEL. As an example, the view-angle control layer LCL may be formed on a second buffer film BF2 formed on the thin-film encapsulation layer TFEL.

[0189] A display device according to an embodiment of the present invention may provide a privacy function by forming a viewing angle control pattern that absorbs light traveling in a lateral direction of a light emitting element layer.

[0190] Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art will understand that the present invention can be embodied in other specific forms without changing the technical spirit or essential features of the present invention. Therefore, it should be understood that the above embodiments are illustrative in all respects and are not limiting.

Claims

1. a display panel having a display area and a non-display area; a viewing angle control layer including a plurality of viewing angle control patterns spaced apart from each other by a predetermined distance on the display area; the viewing angle control pattern includes a transparent insulating pattern and a multi-layer sidewall formed on a side surface of the transparent insulating pattern, the multi-layer sidewall includes a first metal nitride layer, a second metal nitride layer, and a metal layer disposed between the first metal nitride layer and the second metal nitride layer; A display device comprising a first metal nitride layer, and the second metal nitride layer and the metal layer each containing Al or Ti.

2. The display device according to claim 1 , wherein the first metal nitride layer, the second metal nitride layer, and the metal layer each contain the same metal.

3. The display device of claim 1 , wherein the multi-layer sidewall further comprises a metal oxide layer.

4. The display device according to claim 3 , wherein the first metal nitride layer, the metal layer, the second metal nitride layer, and the metal oxide layer are sequentially stacked in a direction away from the transparent insulating pattern.

5. The height of the viewing angle control pattern is formed in the same ratio as the separation distance, The display device of claim 1 , wherein the separation distance is a distance between a central axis of a first viewing angle control pattern and a central axis of a second viewing angle control pattern adjacent to the first viewing angle control pattern.

6. the first metal nitride layer and the second metal nitride layer are formed to the same thickness; The display device according to claim 1 , wherein the metal layer is formed to have a thickness greater than that of the first metal nitride layer.

7. the multi-layer sidewall further comprises a metal oxide layer; The display device according to claim 6 , wherein the metal oxide layer is formed to have a thickness thinner than that of the first metal nitride layer.

8. 2. The display device according to claim 1, wherein the transparent insulating pattern has a cross section in the shape of an isosceles trapezoid with a longer base, and the base angle of the isosceles trapezoid is in the range of 60 degrees to 89.5 degrees.

9. The display panel includes: A substrate; a light-emitting element layer disposed on the substrate, the light-emitting element layer including a pixel electrode, a light-emitting layer, and a common electrode, and a pixel defining film that defines the pixel; a thin film encapsulation layer disposed on the light emitting element layer; The display device according to claim 1 , wherein the viewing angle control layer is disposed on the thin film sealing layer.

10. 10. The display device according to claim 9, wherein the width of the light-emitting layer and the width of the viewing angle control pattern are in a range of 1:3 to 1:

4.

11. The display device of claim 10 , further comprising a touch-sensing layer between the thin film encapsulation layer and the viewing angle control layer.

12. the touch sensing layer includes a touch electrode; The display device according to claim 11 , wherein at least a portion of the viewing angle control pattern overlaps with the touch electrode.

13. The display device of claim 10 , further comprising a touch-sensing layer disposed on the viewing angle control layer.

14. a display panel having a display area and a non-display area; a viewing angle control layer including a plurality of viewing angle control patterns spaced apart from each other by a predetermined distance on the display area; the viewing angle control pattern includes a transparent insulating pattern and a multi-layer sidewall formed on a side surface of the transparent insulating pattern, the multi-layer sidewall includes a first metal nitride layer, a second metal nitride layer, and a metal layer disposed between the first metal nitride layer and the second metal nitride layer; The display device, wherein the first metal nitride layer, the metal layer and the second metal nitride layer are AlN, Al, AlN or TiN, Ti, TiN, respectively.

15. The multi-layer sidewall is made of Al ２ O ３ or Ti ２ O ３ 15. The display device of claim 14, further comprising a metal oxide layer formed by

16. The height of the viewing angle control pattern is formed in the same ratio as the separation distance, The display device of claim 15 , wherein the separation distance is a distance between a central axis of a first viewing angle control pattern and a central axis of a second viewing angle control pattern adjacent to the first viewing angle control pattern.

17. the display panel further includes a plurality of pixels arranged in the display area; the pixel includes a pixel electrode, a light-emitting layer, and a common electrode; 16. The display device according to claim 15, wherein the ratio of the width of the pixel to the width of the viewing angle control pattern is in the range of 1:3 to 1:

4.

18. forming a plurality of transparent insulating layer patterns spaced apart from each other by a predetermined distance on a display panel; forming a light-absorbing layer by sequentially stacking a first metal nitride layer, a metal layer, and a second metal nitride layer on the display panel so as to cover the plurality of transparent insulating layer patterns; etching a light absorbing layer stacked on top of the plurality of transparent insulating layer patterns and between the plurality of transparent insulating layer patterns by anisotropic etching; A method for manufacturing a display device, comprising: a first metal nitride layer; and the second metal nitride layer and the metal layer each containing Al or Ti.

19. The step of forming the light absorbing layer includes: The method for manufacturing a display device according to claim 18 , further comprising: laminating a metal oxide layer on the second metal nitride layer.

20. 20. The method of claim 19, wherein the first metal nitride layer, the metal layer, and the second metal nitride layer are each made of AlN, Al, AlN, or TiN, Ti, TiN.

21. The metal oxide layer is Al ２ O ３ or Ti ２ O ３ The method for manufacturing a display device according to claim 20,

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