Light-emitting device, display device, photoelectric conversion device, electronic apparatus, illumination device, and moving object

Abstract

To provide a technique advantageous for improving the performance of a light emitting device.SOLUTION: The light emitting device includes a substrate on which a pixel region including a plurality of pixels each including a light emitting element and a peripheral region including a circuit for causing the light emitting element to emit light are arranged, wherein a first transistor element-isolated by an element isolation region having a groove structure at a first depth from a surface of the substrate and a second transistor element-isolated by an element isolation region having a groove structure at a second depth from the surface are arranged in the peripheral region, and the first depth is deeper than the second depth.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a light-emitting device, a display device, a photoelectric conversion device, an electronic device, a lighting device, and a moving object. [Background technology]

[0002] Light-emitting devices are known that include pixels that include light-emitting elements using organic electroluminescence (EL) elements or the like. The light-emitting device includes a plurality of pixels arranged in a pixel region and peripheral circuits for driving the pixels. The peripheral circuits include transistors with a variety of operating voltages, such as transistors that require high voltage resistance to supply currents to the light-emitting elements according to the voltages of various luminance signals, and transistors such as logic circuits that require higher switching characteristics than voltage resistance. Patent Document 1 shows that, depending on the operating voltage of the transistors, low-voltage driving transistors are isolated by STI, and high-voltage transistors are isolated by LOCOS. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2008-172264 Summary of the Invention [Problem to be solved by the invention]

[0004] As light-emitting devices become more sophisticated and have more pixels, the number of transistors arranged in the peripheral circuits can increase. In order to increase the number of transistors while suppressing an increase in chip size, it is necessary to reduce the element isolation regions between transistors in the peripheral circuits while taking into account the operating voltage of the transistors.

[0005] An object of the present invention is to provide a technique that is advantageous for improving the performance of light-emitting devices. [Means for solving the problem]

[0006] In view of the above problems, a light-emitting device according to an embodiment of the present invention is a light-emitting device including a substrate on which a pixel region having a plurality of pixels each including a light-emitting element and a peripheral region including a circuit for causing the light-emitting element to emit light are arranged, wherein the peripheral region includes a first transistor isolated from the surface of the substrate by an isolation region having a trench structure with a first depth from the surface, and a second transistor isolated from the surface by an isolation region having a trench structure with a second depth from the surface, and the first depth is greater than the second depth. [Effects of the Invention]

[0007] According to the present invention, it is possible to provide a technique that is advantageous for improving the performance of light-emitting devices. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a diagram showing a configuration example of a light emitting device according to an embodiment of the present invention; [Figure 2] FIG. 2 is a cross-sectional view showing a configuration example of the light emitting device of FIG. [Figure 3] 2A to 2C are diagrams showing an example of a method for manufacturing the light emitting device of FIG. 1. [Figure 4] FIG. 2 is a cross-sectional view showing a configuration example of the light emitting device of FIG. [Figure 5] FIG. 2 is a cross-sectional view showing an example of the configuration of a pixel of the light-emitting device of the present embodiment. [Figure 6] FIG. 1 is a diagram showing an example of an image forming apparatus using a light emitting device according to an embodiment of the present invention. [Figure 7] 1A and 1B are diagrams illustrating an example of a display device using the light-emitting device of this embodiment. [Figure 8] FIG. 1 is a diagram showing an example of a photoelectric conversion device using the light emitting device of this embodiment. [Figure 9] 1 is a diagram showing an example of an electronic device using the light emitting device of the present embodiment. [Figure 10] 1A and 1B are diagrams illustrating an example of a display device using the light-emitting device of this embodiment. [Figure 11] 1 is a diagram showing an example of a lighting device using the light-emitting device of this embodiment. [Figure 12]1A and 1B are diagrams showing an example of a moving object using the light emitting device of the present embodiment. [Figure 13] FIG. 1 is a diagram showing an example of a wearable device using the light-emitting device of the present embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0010] A light emitting device according to an embodiment of the present disclosure will be described with reference to FIGS. 1 to 4. FIG. 1 is a diagram showing an example of the configuration of a light emitting device 100 according to this embodiment. The light emitting device 100 includes a substrate 150 on which a pixel region 110 including a plurality of pixels 101, each including a light emitting element, and a peripheral region 120 including a circuit for causing the light emitting elements to emit light are arranged. The pixel region 110 has a plurality of pixels 101 arranged two-dimensionally. The peripheral region 120 includes a control circuit 106, a vertical scanning circuit 102, and a signal output circuit 104. The signal output circuit 104 includes a horizontal scanning circuit 107, a column digital-to-analog conversion circuit (column DAC circuit) 108, and a column driver circuit 109.

[0011] The control circuit 106 performs digital signal processing in response to input data input from outside the light emitting device 100, and controls the vertical scanning circuit 102 and the signal output circuit 104. The vertical scanning circuit 102 and the signal output circuit 104 scan the plurality of pixels 101 in accordance with the control circuit 106. More specifically, to each of the plurality of pixels 101, a control signal is input from the vertical scanning circuit 102 via a scanning line 103, and luminance signal data (voltage signal) is input from the signal output circuit 104 via a signal line 105. The column DAC circuit 108 converts the digital image data supplied from the control circuit 106, which is scanned by the horizontal scanning circuit 107 and input to each column, into an analog signal voltage. The column driver circuit 109 supplies the luminance signal data corresponding to the analog signal voltage to the plurality of pixels 101 via the signal line 105.

[0012] FIG. 2 is a cross-sectional view showing an example of an element mounted on a light-emitting device 100 according to this embodiment. The light-emitting device 100 is formed in and on a substrate 150 made of a semiconductor material such as silicon. The substrate 150 may also be referred to as a semiconductor substrate. As described above, the light-emitting device 100 includes a pixel region 110 and a peripheral region 120. FIG. 2 shows a portion of a transistor 353 arranged in the pixel region 110 and portions of transistors 351 and 352 arranged in the peripheral region 120. The pixel region 110 includes a transistor 353 isolated from a surface 360 ​​of the substrate 150 by a trench isolation region 313 having a depth 364. The peripheral region 120 includes a transistor 351 isolated from a surface 360 ​​of the substrate 150 by a trench isolation region 302 having a depth 361 and a trench isolation region 301 having a depth 362. The depth 361 of the element isolation region 302 and the depth 362 of the element isolation region 301 are different from each other. Specifically, the depth 361 of the element isolation region 302 is deeper than the depth 362 of the element isolation region 301. Details will be described later.

[0013] 2, the transistors 351 to 353 are described as having a P conductivity type (P-channel transistor), but may also have an N conductivity type (N-channel transistor). The transistor 353 is an example of a transistor provided in each of the multiple pixels 101 arranged in the pixel region 110. The transistors 351 and 352 are examples of transistors provided in the control circuit 106, the vertical scanning circuit 102, and the signal output circuit 104 arranged in the peripheral region 120, respectively.

[0014] The transistors 351 to 353 may include an N-type well 320, a P-type lightly doped region 321, a P-type diffusion region 322 functioning as a source or drain, a gate electrode 303, sidewalls 304, and a silicide prevention film 305. Each of the transistors 351 is isolated by an element isolation region 302, each of the transistors 352 is isolated by an element isolation region 301, and each of the transistors 353 is isolated by an element isolation region 313. A silicide 306 may be disposed on the surface of the gate electrode 303 or the surface of the diffusion region 322. A region of the surface of the substrate 150 where the silicide 306 is not to be formed may be covered with the silicide prevention film 305. An interlayer film 307, a plug 308, a wiring pattern 309, a metal electrode 310, and the like are disposed on the silicide 306. The metal electrodes 310 may be individually arranged in the pixel region 110 corresponding to the subpixels 331, 332, and 333, respectively. Alternatively, the metal electrodes 310 may be continuously arranged in the peripheral region 120 and function as a light-shielding layer. An optical adjustment layer 334 having a thickness satisfying the optical interference conditions for the emitted light color may be arranged on the metal electrodes 310 of the subpixels 331 to 333. A transparent electrode 335, a pixel separation layer 336, an organic light-emitting layer 337, and a transparent electrode 338 are arranged on the optical adjustment layer 334. A sealing film 339 is arranged on the transparent electrode 338. Color filters 341 having spectral characteristics corresponding to the respective colors of the subpixels 331 to 333 are arranged on the sealing film 339. A color filter 341b that transmits blue light is arranged on the subpixel 331. A color filter 341g that transmits green light is arranged on the subpixel 332. A color filter 341r that transmits red light is disposed in the sub-pixel 333. This allows light emission according to the luminance signal of each of the sub-pixels 331 to 333 to be obtained. One pixel 101 can be composed of, for example, the sub-pixels 331 to 333. In the sub-pixels 331 to 333, the transparent electrode 335 may function as an anode, and the transparent electrode 338 may function as a cathode. Alternatively, the transparent electrode 335 may function as a cathode, and the transparent electrode 338 may function as an anode.As shown in FIG. 2, the transparent electrode 338 may be shared by a plurality of sub-pixels 331 to 333 (a plurality of pixels 101).

[0015] The peripheral region 120 is provided with transistors with various operating voltages, such as transistors that require high voltage resistance to supply current corresponding to the voltage of a luminance signal to the pixels 101, and transistors, such as those in logic circuits, that require higher switching characteristics rather than voltage resistance. Transistors that require high voltage resistance may be provided, for example, in the column DAC circuit 108 or the column driver circuit 109. Transistors provided in logic circuits, such as the control circuit 106 or the horizontal scanning circuit 107, are driven at a lower voltage than the column DAC circuit 108 or the column driver circuit 109, and may require higher switching characteristics rather than voltage resistance. Furthermore, the transistors provided in the vertical scanning circuit 102 may include transistors that are driven at the same voltage as the transistors provided in the control circuit 106 or the horizontal scanning circuit 107, and transistors that are driven at the same voltage as the transistors provided in the column DAC circuit 108 or the column driver circuit 109.

[0016] Therefore, in the peripheral region 120, transistors 351 and 352 are arranged, each of which is isolated by an isolation region 301 and 302 having a trench structure with different depths from a surface 360 ​​of the substrate 150 depending on the operating voltage, etc. For example, the column DAC circuit 108 and the column driver circuit 109 are each provided with a transistor 351 isolated by an isolation region 302 having a trench structure with a depth 361 from the surface 360 ​​of the substrate 150. Furthermore, for example, the control circuit 106 and the horizontal scanning circuit 107 are each provided with a transistor 352 isolated by an isolation region 301 having a trench structure with a depth 362 that is shallower than the depth 361 from the surface 360 ​​of the substrate 150. Furthermore, for example, the vertical scanning circuit 102 is each provided with a transistor 351 isolated by an isolation region 302 having a trench structure with a depth 361 from the surface 360 ​​of the substrate 150, and a transistor 351 isolated by an isolation region 301 having a trench structure with a depth 362 from the surface 360 ​​of the substrate 150. A transistor 351 isolated by an element isolation region 302 and a transistor 352 isolated by an element isolation region 301 are arranged according to the withstand voltage required for the circuits to be arranged therein. For example, a higher voltage can be applied to the transistor 351 than to the transistor 352. This makes it possible to reduce the circuit size of the peripheral region 120 while maintaining the withstand voltage required for each circuit in the peripheral region 120, compared to a case where only the element isolation region 302 having high withstand voltage is provided. In other words, for example, it becomes possible to arrange more transistors in the peripheral region 120, thereby achieving higher performance of the light-emitting device 100.

[0017] If LOCOS is used for element isolation between transistors 351 that require high breakdown voltage, it is difficult to reduce the isolation width. If the isolation width is reduced, leakage current may occur due to a decrease in breakdown voltage, which may increase power consumption. In contrast, in this embodiment, an element isolation region 301 having a trench structure deeper than the element isolation region 302 between low-voltage-driven transistors 352 is used to separate the transistors 351 that require high breakdown voltage. The element isolation regions 301, 302 are element isolation regions with a so-called shallow trench isolation (STI) structure. The element isolation with the STI structure allows the isolation width between transistors 351 to be reduced more than isolation using LOCOS. This reduces the spacing between transistors 351 arranged in the peripheral region 120, enabling transistors to be arranged at a higher density.

[0018] The transistors 353 arranged in the pixel region 110 are isolated by a trench-structured device isolation region 313. A depth 364 of the trench structure of the device isolation region 313 from the surface 360 ​​of the substrate 150 may be the same as a depth 362 of the trench structure of the device isolation region 301 arranged in the peripheral region 120 from the surface 360 ​​of the substrate 150. By forming the trench structure of the device isolation region 313 arranged in the pixel region 110 and the trench structure of the device isolation region 301 arranged in the peripheral region 120 to be the same structure, the trench structures of the device isolation regions 301 and 313 can be formed simultaneously. In other words, the number of steps in the manufacturing process of the light-emitting device 100 can be reduced compared to when the trench structure of the device isolation region 313 and the trench structure of the device isolation region 301 are formed separately. Furthermore, the transistors 353 arranged in the pixel region 110 generally require high voltage resistance because they pass currents corresponding to various brightness signal voltages through the light-emitting elements. Therefore, the depth 364 of the groove structure of the element isolation region 313 from the surface 360 ​​of the substrate 150 may be the same as, for example, the depth 361 of the groove structure of the element isolation region 302 arranged in the peripheral region 120 from the surface 360 ​​of the substrate 150. However, this is not limitative, and the depth 364 of the groove structure of the element isolation region 313 from the surface 360 ​​of the substrate 150 may be selected appropriately depending on the voltage resistance of the transistor 353, etc.

[0019] The element isolation region 313 of the transistor 353 arranged in the pixel region 110 is an element isolation region with an STI structure, similar to the element isolation regions 301 and 302. As described above, element isolation with an STI structure can reduce the width of isolation between the transistors 353 compared to isolation using LOCOS. This reduces the spacing between the transistors 353 arranged in the pixel region 110, making it possible to arrange the pixels 101 at a higher density. In other words, this is effective in increasing the resolution of the pixel region 110 of the light-emitting device 100.

[0020] Next, a method for manufacturing the light emitting device 100 will be described. Figures 3(a) to 3(d) show an example of a process for forming the element isolation region 301 and the element isolation region 302 arranged in the peripheral region 120. The element isolation region 313 arranged in the pixel region 110 may be formed simultaneously with the element isolation region 301 or the element isolation region 302, for example, and may have the same configuration as the element isolation region 301 or the element isolation region 302.

[0021] First, a hard mask including silicon oxide 401, polysilicon 402, and silicon nitride 403 is formed on the substrate 150. Next, a photoresist 404 is formed, and then the photoresist 404 is patterned using a photolithography process only in the region where the element isolation region 301 is to be formed. After the photoresist 404 is patterned, trenches 391 that form the element isolation region 301 are formed using dry etching or the like, as shown in FIG. 3(a).

[0022] Next, after removing the photoresist 404, a photoresist 405 is formed, and the photoresist 405 is patterned using a photolithography process only in the region where the element isolation region 302 is to be formed. After the photoresist 405 is patterned, a trench 392 that constitutes the element isolation region 302 is formed using dry etching or the like, as shown in Fig. 3(b). Here, the trench 391 is formed before the trench 392, but the trench 391 may also be formed after the trench 392 is formed.

[0023] By setting the depths of trenches 391 and 392 to arbitrary depths, a depth 362 of the groove structure of element isolation region 301 from the surface 360 ​​of substrate 150 and a depth 361 of the groove structure of element isolation region 302 from the surface 360 ​​of substrate 150 are determined. For example, depth 362 of the groove structure (trench 391) of element isolation region 301 may be approximately 100 to 400 nm. Furthermore, depth 361 of the groove structure (trench 392) of element isolation region 302 may be approximately 400 to 800 nm. For example, depth 361 may be 300 nm or more deeper than depth 362.

[0024] 2, for example, in the trench structure of the isolation region 301 having a depth 362, the aspect ratio obtained by dividing the depth 362 of the trench structure by the width in the lateral direction of the trench structure may be 1 or more. The width in the lateral direction of the trench structure of the isolation region 301 may be the width in a direction intersecting (orthogonal) the direction in which the trench structure of the isolation region 301 extends, for example, at the same height as the surface 360 ​​of the substrate 150. Similarly, for example, in the trench structure of the isolation region 302 having a depth 361, the aspect ratio obtained by dividing the depth 361 of the trench structure by the width in the lateral direction of the trench structure may be 1 or more. The width in the lateral direction of the trench structure of the isolation region 302 may be the width in a direction intersecting (orthogonal) the direction in which the trench structure of the isolation region 302 extends, for example, at the same height as the surface 360 ​​of the substrate 150. Similarly, for example, in the trench structure of the isolation region 313 having a depth 364, the aspect ratio obtained by dividing the depth 364 of the trench structure by the width of the trench structure in the lateral direction may be equal to or greater than 1. The width of the trench structure of the isolation region 313 in the lateral direction may be the width at the same height as the surface 360 ​​of the substrate 150 in a direction intersecting (orthogonal to) the direction in which the trench structure of the isolation region 313 extends.

[0025] Next, as shown in FIG. 3( c), an insulating film 406 is formed to fill trenches 391 and 392, which are groove structures that form element isolation regions 301 and 302. Specifically, first, an insulating film is formed on the side and bottom surfaces of trenches 391 and 392 by thermal oxidation in an oxidizing gas atmosphere. Then, an insulator is formed to fill trenches 391 and 392 so as to cover the insulating film formed along the inner walls of trenches 391 and 392. The insulator filled in trenches 391 and 392 may be, for example, silicon oxide formed using a high-density plasma CVD method. The insulator filled in the trenches is formed to a thickness that fills trenches 391 and 392, which are groove structures that form element isolation regions 301 and 302. The insulator filled in trenches 391 and 392 is planarized, for example, by a combination of etching and chemical mechanical polishing (CMP).

[0026] After the insulator is planarized, the silicon nitride 403 and polysilicon 402 are removed as shown in FIG. 3( d ). Before removing the polysilicon 402, the thickness of the insulator in the trenches 391 and 392 may be adjusted using wet etching or the like. The depths of the trenches 391 and 392, which are groove structures, are different in the element isolation region 301 and the element isolation region 302, as described above. Therefore, the protrusion amount of the insulator embedded in the groove structure (trench 391) with a depth 362 of the element isolation region 301 from the surface 360 ​​of the substrate 150 may be different from the protrusion amount of the insulator embedded in the groove structure (trench 392) with a depth 361 of the element isolation region 302 from the surface 360 ​​of the substrate 150. In addition, wet etching or the like may be used to control the amount of protrusion of the insulator embedded in the groove structure (trench 391) of depth 362 of the element isolation region 301 relative to the surface 360 ​​of the substrate 150 so that it is the same as the amount of protrusion of the insulator embedded in the groove structure (trench 392) of depth 361 of the element isolation region 302 relative to the surface 360 ​​of the substrate 150.

[0027] The manufacturing method will be further explained below with reference to Fig. 2. After the element isolation regions 301 and 302 are formed in the step shown in Fig. 3(d), silicon oxide is formed on the surface of the substrate 150 by, for example, thermal oxidation. This silicon oxide film is provided for purposes such as suppressing channeling during ion implantation.

[0028] Furthermore, with a predetermined region masked with photoresist or the like, multi-stage ion implantation is used to form an N-type well 320. The multi-stage ion implantation is performed, for example, at an acceleration energy of 10 to 2000 keV and a dose of 1×10 11 ~5×10 13 cm -2 The dose can be adjusted within a range of about 1 / 200, and the dose may be changed depending on the depth of multi-stage ion implantation. For example, a high-concentration well may be formed in a region shallower than the bottom of the element isolation region 301 and the element isolation region 302, and a low-concentration well may be formed in a region deeper than the bottom of the element isolation region 301 and the element isolation region 302.

[0029] Next, a gate insulating film is formed. At this time, the thickness of the gate insulating film may differ depending on the operating voltage of the transistors 351 to 353. For example, the gate insulating film of the transistor 351, which is expected to have a higher operating voltage than the transistor 352, may be formed thicker than the gate insulating film of the transistor 352. As described above, the transistor 353 disposed in the pixel region 110 may require high voltage resistance. Therefore, for example, the gate insulating film of the transistor 353 may be formed thicker than the gate insulating film of the transistor 352. The gate insulating film of the transistor 351 may be thicker or thinner than the gate insulating film of the transistor 353. For example, to reduce the number of steps in the manufacturing process, the gate insulating films of the transistors 351 and 353 may be formed simultaneously. In this case, the gate insulating film of the transistor 351 may have the same thickness as the gate insulating film of the transistor 353.

[0030] After the gate insulating film is formed, a gate electrode 303 is formed. Next, with a predetermined region masked using photoresist or the like, an N-type lightly doped region 321 is formed by ion implantation. The ion implantation is performed, for example, at an acceleration energy of 10 to 150 keV and a dose of 1×10 11 ~5×10 14 cm -2 The dose can be adjusted within a range of about 100 .mu.m, and the dose may be varied depending on the depth using multi-stage ion implantation.

[0031] After the lightly doped region 321 is formed, the sidewall 304 is formed. The sidewall 304 may be formed by depositing silicon oxide and silicon nitride and then etching back the deposited silicon oxide and silicon nitride. The sidewall 304 may have a single layer structure of silicon oxide or silicon nitride, or may have a multilayer structure.

[0032] Next, with a predetermined region masked with photoresist or the like, a P-type diffusion region 322 that functions as a source or drain is formed by ion implantation. At this time, in order to form a transistor with an offset structure, a resist pattern may be formed such that the P-type diffusion region 322 is formed a predetermined distance away from the end of the gate electrode 303. The ion implantation is performed, for example, at an acceleration energy of 3 to 30 keV and a dose of 1×10 13 ~7×10 15 cm -2 After the ion implantation, a heat treatment is carried out to activate the dopants.

[0033] As described above, the depth 361 of the trench structure (trench 392) in the element isolation region 302 may be 300 nm or more deeper than the depth 362 of the trench structure (trench 391) in the element isolation region 301. In addition, the minimum width of the trench structure (trench 391) in the element isolation region 301 in the lateral direction may be 0.1 μm or more and 0.2 μm or less. Furthermore, the minimum width of the trench structure (trench 392) in the lateral direction of the element isolation region 302 may be 0.2 μm or more and 0.5 μm or less. For example, the width of the trench structure (trench 392) in the lateral direction with the depth 361 in the element isolation region 302 may be wider than the width of the trench structure (trench 391) in the lateral direction with the depth 362 in the element isolation region 301. The depth and width of the trench structures (trench 391, 392) of the element isolation regions 301, 302 can be changed as appropriate depending on the voltages applied to the transistors 351, 352. For example, for a transistor 352 that has a low voltage applied between the source and drain, the element isolation region 301 can be shallower than the element isolation region 302, thereby reducing the opening width of the trench structure (trench 391) of the element isolation region 301. This reduces the circuit size. Furthermore, considering the same size of the substrate 150, arranging more transistors can contribute to improving the functionality of the light-emitting device 100. In this embodiment, an example is shown in which the element isolation regions 301, 302 having trench structures with two different depths are provided in the peripheral region 120. However, element isolation regions having trench structures with two or more different depths may be provided.

[0034] As described above, the depth 361 of the element isolation region 302 can be formed deeper than the depth 362 of the element isolation region 301. In this case, if the depth 362 of the trench structure of the element isolation region 302 is made deeper than the bottom of the well 320, the potential of the well 320 may be in a floating state for each transistor, which may cause a leak current. Therefore, the trench structure of the element isolation region 302 may be formed shallower than the bottom of the N-type well 320.

[0035] After dopant activation, an anti-silicide film 305 is formed to define a region where the silicide 306 is to be formed. For example, the anti-silicide film 305 is disposed on the lightly doped region 321 so that the silicide 306 is not formed on the lightly doped region 321. The anti-silicide film 305 may be made of silicon oxide or the like.

[0036] After the formation of the anti-silicide film 305, a metal layer is formed and heat treatment is performed to form the silicide 306. After the formation of the silicide 306, the metal layer on the anti-silicide film 305 is removed. The metal layer for forming the silicide 306 may be made of cobalt, nickel, titanium, platinum, tungsten, palladium, or the like.

[0037] After the silicide 306 is formed, an interlayer film 307, plugs 308 disposed in the interlayer film 307, and a wiring pattern 309 are formed. Next, a metal electrode 310 is formed, and optical adjustment layers 334 of different thicknesses that correspond to the interference of the emission wavelengths of the sub-pixels 331 to 333 are formed on the metal electrode 310. A transparent electrode 335, a pixel separation layer 336 for separating the pixels, an organic light-emitting layer 337, and a transparent electrode 338 are formed in this order on the optical adjustment layer 334. Furthermore, a sealing film 339, a planarization layer 340, and a color filter 341 are formed on the transparent electrode 338.

[0038] The light emitting device 100 can be manufactured using the above-described steps. However, the light emitting device 100 does not necessarily have to be formed using the above-described manufacturing method and process order, and various process permutations and modifications are possible. The above-described embodiments merely exemplify some aspects to which the present disclosure can be applied, and do not preclude appropriate modifications and variations within the scope of the present disclosure.

[0039] Fig. 4 is a diagram showing a modified example of the light emitting device 100 shown in Fig. 2. In the configuration shown in Fig. 4, the element isolation region 302 having a groove structure extending from the surface 360 ​​of the substrate 150 to a depth 361 shown in Fig. 2 is changed to an element isolation region 500. In the configuration shown in Fig. 4, the configuration other than the element isolation region 500 may be the same as the configuration shown in Fig. 2, and therefore, hereinafter, only the element isolation region 500 will be described, and descriptions of the other configurations will be omitted as appropriate.

[0040] The trench structure of the element isolation region 500 at a depth 361 includes a portion 501 extending from the surface 360 ​​of the substrate 150 to a depth 363, and a portion 502 extending from the depth 363 to the depth 361. The trench structure of the element isolation region 500 has a two-stage structure in which the portion 502 extends from a part of the portion 501 at the depth 363. It can be said that the trench structure of the element isolation region 500 is formed by combining two types of trenches.

[0041] In the trench structure of the element isolation region 500, for example, the length from the depth 363 to the depth 361 (the depthwise length of the portion 502) may be equal to or greater than the length from the surface 360 ​​of the substrate 150 to the depth 363 (the depthwise length of the portion 501). Also, for example, the width in the short-side direction of the portion 501 may be wider than the width in the short-side direction of the portion 502. Here, the width in the short-side direction of the portion 501 may be the width in a direction intersecting (orthogonal to) the direction in which the trench structure of the element isolation region 500 (portion 501) extends, for example, at the same height as the surface 360 ​​of the substrate 150. Also, the width in the short-side direction of the portion 502 may be the width in a direction intersecting (orthogonal to) the direction in which the trench structure of the element isolation region 500 (portion 502) extends, for example, from the surface 360 ​​of the substrate 150 to the depth 363.

[0042] The trench constituting the portion 502 of the trench structure of the element isolation region 500 may be a trench with a so-called deep trench isolation (DTI) structure. Furthermore, the trench constituting the portion 501 of the trench structure of the element isolation region 500 may be a trench with an STI structure, similar to the trenches 391 and 392 constituting the trench structures of the element isolation regions 301 and 302 described above. In the element isolation region 500, the aspect ratio obtained by dividing the depth of the portion 502 by the depth of the portion 501 may be 1 or greater, and the portion 502 may be formed deeper (longer) than the portion 501. Furthermore, by making the width of the portion 501 in the lateral direction larger than the width of the portion 502 in the lateral direction, the width of the active region of the transistor 351 can be arbitrarily controlled by the width of the portion 501 of the element isolation region 500.

[0043] In the configuration shown in FIG. 4, the element isolation region 500 has a two-stage stacked structure. Therefore, for example, the portion 501 of the element isolation region 500 and the element isolation region 301 may be formed simultaneously using the same process. In this case, for example, the depth 362 from the surface 360 ​​of the substrate 150 may be the same as the depth 363 from the surface 360 ​​of the substrate 150. The portion 501 of the element isolation region 500 and the element isolation region 301 are formed simultaneously. This has the effect of making the protrusion amounts from the surface 360 ​​of the substrate 150 of the insulator embedded in the groove structure of the element isolation region 500 (portion 501) and the insulator embedded in the groove structure of the element isolation region 301 approximately the same. The constant protrusion amounts improve the flatness of the substrate 150 during processing, enabling finer processing when forming the gate electrode 303, etc.

[0044] Furthermore, compared to the trench structure of the element isolation region 302 shown in FIG. 2 , the depth of the trench structure of the portion 501 of the element isolation region 500 can be made shallower, which may make it easier to fill the trench structure of the portion 501 with an insulator than to fill the trench structure of the element isolation region 302 with an insulator. This also makes it possible to form the width of the trench structure of the portion 501 in the lateral direction to be smaller than the width of the element isolation region 302 in the lateral direction. As a result, it is possible to increase the arrangement density of the transistors 351 isolated using the element isolation region 500. This allows the arrangement density of the transistors 351, 352 in the peripheral circuit 120 to be further improved than in the configuration shown in FIG. 2 . This allows for the light-emitting device 100 to achieve higher performance.

[0045] Furthermore, the transistors 353 arranged in the pixel region 110 may be isolated by the element isolation region 500, similar to the transistors 351 arranged in the peripheral region 120. This may improve the arrangement density of the transistors 353, for example, compared to when the element isolation region 313 has the same configuration as the element isolation region 302. This may enable, for example, higher resolution of the pixels 101.

[0046] Here, application examples in which the light emitting device 100 of this embodiment is applied to an image forming device, a display device, a photoelectric conversion device, an electronic device, a lighting device, a mobile object, and a wearable device will be described with reference to Figs. 5(a) and 5(b) to 13(a) and 13(b). The description will be made assuming that a light emitting element such as an organic EL element using an organic light emitting material is disposed in a pixel disposed in the light emitting device 100. First, details of each component disposed in a pixel of the light emitting device 100 will be shown, and then application examples will be described.

[0047] Structure of organic light-emitting element The organic light-emitting element is provided by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, etc. may be provided on the cathode. When a color filter is provided, a planarizing layer may be provided between the protective layer and the color filter. The planarizing layer may be made of an acrylic resin, etc. The same applies when a planarizing layer is provided between the color filter and the microlens.

[0048] substrate Examples of the substrate include quartz, glass, silicon wafer, resin, and metal. Furthermore, the substrate may be provided with switching elements such as transistors and wiring patterns, with an insulating layer thereon. When a silicon wafer is used as the substrate, the active layer, source region, and drain region of the transistor are formed within the substrate. Furthermore, it is suitable because it allows transistors to be densely arranged. The insulating layer may be made of any material, as long as it allows contact holes to be formed so that a wiring pattern can be formed between the first electrode and the substrate, and insulation from unconnected wiring patterns is ensured. For example, the insulating layer may be made of a resin such as polyimide, silicon oxide, silicon nitride, or the like.

[0049] electrode A pair of electrodes can be used as the electrodes. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with a higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0050] The anode may be made of a material with a high work function. For example, simple metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, and tungsten, mixtures containing these metals, alloys of these metals, and metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and zinc indium oxide can be used. Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used as the anode.

[0051] These electrode materials may be used alone or in combination of two or more. The anode may be composed of one layer or multiple layers.

[0052] When the electrode is used as a reflective electrode, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or alloys thereof, or laminates thereof can be used. The above materials can also function as a reflective film without functioning as an electrode. Furthermore, when a transparent electrode is used as the electrode, a transparent conductive oxide layer such as indium tin oxide (ITO) or indium zinc oxide can be used, but is not limited to these. Photolithography technology can be used to form the electrode.

[0053] On the other hand, a material with a low work function may be selected as the cathode material. Examples include simple metals such as alkali metals (e.g., lithium), alkaline earth metals (e.g., calcium), aluminum, titanium, manganese, silver, lead, and chromium, as well as mixtures containing these metals. Alternatively, alloys combining these simple metals may be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, and zinc-silver may be used. Metal oxides such as indium tin oxide (ITO) may also be used. These electrode materials may be used alone or in combination. The cathode may have a single-layer or multi-layer structure. Silver may be used as the cathode, and a silver alloy may be used to reduce silver aggregation. The alloy ratio is not important as long as silver aggregation is reduced. For example, the silver:other metal ratio may be 1:1 or 3:1.

[0054] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but using a DC or AC sputtering method, for example, can provide good coverage of the formed film and reduce the resistance of the cathode.

[0055] Pixel isolation layer The pixel separation layer may be formed of silicon oxides such as silicon nitride (SiN), silicon oxynitride (SiON), or silicon oxide (SiO) formed using a chemical vapor deposition (CVD) method. To increase the in-plane resistance of the organic compound layer, the thickness of the organic compound layer, particularly the hole transport layer, may be thinned on the sidewalls of the pixel separation layer. Specifically, the thickness of the organic compound layer on the sidewalls can be thinned by increasing the taper angle of the sidewalls of the pixel separation layer or the thickness of the pixel separation layer, thereby increasing vignetting during deposition.

[0056] On the other hand, the sidewall taper angle and film thickness of the pixel separation layer can be adjusted to the extent that voids are not formed in the protective layer formed thereon. By preventing voids from being formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, deterioration of reliability such as the occurrence of dark spots and poor conduction of the second electrode can be reduced.

[0057] According to this embodiment, charge leakage to adjacent pixels can be effectively suppressed even if the taper angle of the sidewall of the pixel separation layer is not steep. As a result of this study, it was found that charge leakage can be sufficiently reduced if the taper angle is between 60 degrees and 90 degrees. The thickness of the pixel separation layer may be between 10 nm and 150 nm. Similar effects can also be achieved even if the pixel separation layer is composed only of pixel electrodes without a pixel separation layer. However, in this case, short circuits in organic light-emitting elements can be reduced by making the thickness of the pixel electrode less than half that of the organic layer or by making the edge of the pixel electrode forward tapered at less than 60 degrees.

[0058] Furthermore, even when the first electrode is a cathode and the second electrode is an anode, a wide color gamut and low-voltage operation are possible by forming an electron transport material and a charge transport layer, and an emitting layer on the charge transport layer.

[0059] organic compound layer The organic compound layer may be formed as a single layer or as multiple layers. When multiple layers are present, they may be called hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc., depending on their functions. The organic compound layer is mainly composed of organic compounds but may also contain inorganic atoms or inorganic compounds. The organic compound layer may contain, for example, copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, etc. The organic compound layer may be disposed between the first electrode and the second electrode, or may be disposed in contact with the first electrode and the second electrode.

[0060] When multiple light-emitting layers are present, a charge-generating portion may be present between the first and second light-emitting layers. The charge-generating portion may have an organic compound with a lowest unoccupied molecular orbital energy (LUMO) of -5.0 eV or less. The same applies when a charge-generating portion is present between the second and third light-emitting layers.

[0061] protective layer A protective layer may be provided on the cathode. For example, by adhering glass with a moisture absorbent on the cathode, the penetration of moisture and other contaminants into the organic compound layer can be reduced, thereby reducing the occurrence of display defects. In another embodiment, a passivation layer such as silicon nitride may be provided on the cathode to reduce the penetration of moisture and other contaminants into the organic compound layer. For example, after forming the cathode, the cathode may be transferred to another chamber without breaking the vacuum, and a 2 μm-thick silicon nitride may be formed by CVD to serve as a protective layer. After forming the protective layer by CVD, a protective layer may be formed by atomic layer deposition (ALD). The material of the protective layer formed by ALD is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, or the like. Silicon nitride may be further formed by CVD on the protective layer formed by ALD. The protective layer formed by ALD may have a thickness smaller than that of the protective layer formed by CVD. Specifically, the thickness of the protective layer formed by ALD may be 50% or less, or even 10% or less, of the protective layer formed by CVD.

[0062] Color filters A color filter may be provided on the protective layer. For example, a color filter taking into consideration the size of the organic light-emitting element may be provided on another substrate, and the substrate on which the color filter is formed may be bonded to the substrate on which the organic light-emitting element is provided. Alternatively, for example, a color filter may be patterned on the above-mentioned protective layer using photolithography technology. The color filter may be made of a polymer.

[0063] planarization layer A planarization layer may be disposed between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing the unevenness of the layers below the planarization layer. It may also be called a material resin layer without limiting the purpose. The planarization layer may be composed of an organic compound, and may be a low molecular weight or a high molecular weight. In consideration of reducing the unevenness, a high molecular weight organic compound may be used for the planarization layer.

[0064] The planarization layers may be provided above and below the color filter. In this case, the constituent materials of the planarization layers may be the same or different. Specific examples of the material for the planarization layer include polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0065] Microlenses The organic light-emitting device may have an optical component such as a microlens on its light-emitting side. The microlens may be made of acrylic resin, epoxy resin, or the like. The microlens may be intended to increase the amount of light extracted from the organic light-emitting device or to control the direction of the extracted light. The microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents to the hemisphere, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the hemisphere is the vertex of the microlens. The vertex of the microlens can be determined in the same way in any cross-sectional view. In other words, among the tangents to the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the semicircle is the vertex of the microlens.

[0066] It is also possible to define the midpoint of a microlens. In the cross section of the microlens, a line segment is imagined from the point where an arc shape ends to the point where another arc shape ends, and the midpoint of this line segment can be called the midpoint of the microlens. The cross section for determining the vertex and midpoint may be a cross section perpendicular to the insulating layer.

[0067] The microlens has a first surface having a convex portion and a second surface opposite the first surface. The second surface can be disposed closer to the functional layer (light-emitting layer) than the first surface. To achieve this configuration, it is necessary to form the microlens on the light-emitting device. If the functional layer is an organic layer, high-temperature processes can be avoided in the microlens manufacturing process. Furthermore, if the second surface is disposed closer to the functional layer than the first surface, the glass transition temperatures of the organic compounds constituting the organic layer may all be 100°C or higher, and are preferably, for example, 130°C or higher.

[0068] Counter substrate An opposing substrate may be disposed on the planarization layer. The opposing substrate is called an opposing substrate because it is provided at a position corresponding to the aforementioned substrate. The opposing substrate may be made of the same material as the aforementioned substrate. When the aforementioned substrate is defined as a first substrate, the opposing substrate may be a second substrate.

[0069] organic layer The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light-emitting element according to an embodiment of the present disclosure may be formed by the following method.

[0070] The organic compound layer constituting the organic light-emitting device according to the embodiment of the present disclosure can be formed by dry processes such as vacuum deposition, ionization deposition, sputtering, plasma, etc. Alternatively to the dry process, a wet process can be used in which the compound is dissolved in an appropriate solvent and a layer is formed by a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).

[0071] Here, when a layer is formed by a vacuum deposition method or a solution coating method, crystallization is unlikely to occur and the layer has excellent stability over time. When a film is formed by a coating method, the film can be formed by combining the film with an appropriate binder resin.

[0072] Examples of the binder resin include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0073] These binder resins may be used singly or in combination as homopolymers or copolymers, and may further contain known additives such as plasticizers, antioxidants, and ultraviolet absorbers, as needed.

[0074] Pixel circuit The light-emitting device may have a pixel circuit connected to the light-emitting element. The pixel circuit may be an active matrix type that controls the emission of the first light-emitting element and the second light-emitting element independently. The active matrix type circuit may be voltage-programmed or current-programmed. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have a light-emitting element, a transistor that controls the emission brightness of the light-emitting element, a transistor that controls the emission timing, a capacitor that holds the gate voltage of the transistor that controls the emission brightness, and a transistor for connecting to GND without going through the light-emitting element.

[0075] The light-emitting device has a display region and a peripheral region arranged around the display region. The display region has pixel circuits, and the peripheral region has a display control circuit. The mobility of a transistor constituting the pixel circuit may be lower than the mobility of a transistor constituting the display control circuit.

[0076] The slope of the current-voltage characteristics of the transistors that make up the pixel circuit may be smaller than the slope of the current-voltage characteristics of the transistors that make up the display control circuit. The slope of the current-voltage characteristics can be measured using the so-called Vg-Ig characteristics.

[0077] The transistors that make up the pixel circuit are transistors connected to the light-emitting elements, such as the first light-emitting element.

[0078] pixel An organic light emitting device has a plurality of pixels, each of which has sub-pixels that emit different colors, for example, RGB colors.

[0079] A pixel has an area called a pixel aperture that emits light. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

[0080] The spacing between the subpixels may be 10 μm or less, and specifically may be 8 μm, 7.4 μm, or 6.4 μm.

[0081] The pixels may be arranged in a known manner in a plan view. For example, they may be in a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement. The shape of the subpixels in a plan view may be any known shape. For example, they may be rectangular, quadrilaterals such as diamonds, or hexagons. Of course, a shape that is close to a rectangle, rather than an exact shape, is included in the rectangle. The shape of the subpixels and the pixel arrangement may be used in combination.

[0082] Uses of the organic light-emitting device according to embodiments of the present disclosure The organic light-emitting device according to the embodiment of the present disclosure can be used as a component of a display device or a lighting device, and can also be used as an exposure light source for an electrophotographic image forming device, a backlight for a liquid crystal display device, or a light-emitting device having a white light source and a color filter.

[0083] The display device may be an image information processing device that has an image input unit that inputs image information from an area CCD, linear CCD, memory card, etc., has an information processing unit that processes the input information, and displays the input image on the display unit.

[0084] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of this touch panel function may be an infrared method, a capacitance method, a resistive film method, or an electromagnetic induction method, and is not particularly limited. The display device may also be used in the display unit of a multifunction printer.

[0085] Next, further explanation will be given with reference to the drawings. Fig. 5(a) shows an example of a pixel arranged in the pixel region 110 of the light-emitting device 100. The pixel has sub-pixels 810. The sub-pixels are divided into 810R, 810G, and 810B based on their light emission. The emitted colors may be distinguished by the wavelength of light emitted from the light-emitting layer, or the light emitted from the sub-pixels may be selectively transmitted or color-converted using a color filter or the like. Each sub-pixel has a reflective electrode 802 as a first electrode on an interlayer insulating layer 801, an insulating layer 803 covering the edge of the reflective electrode 802, an organic compound layer 804 covering the first electrode and the insulating layer, a transparent electrode 805 as a second electrode, a protective layer 806, and a color filter 807.

[0086] A transistor and a capacitor may be disposed below or inside the interlayer insulating layer 801. The transistor and the first electrode may be electrically connected via a contact hole (not shown) or the like.

[0087] The insulating layer 803 may also be called a bank or a pixel separation film. The insulating layer 803 covers the edges of the first electrodes and is disposed to surround the first electrodes. The portions of the first electrodes not covered by the insulating layer 803 come into contact with the organic compound layer 804 and become light-emitting regions.

[0088] The organic compound layer 804 includes a hole injection layer 841 , a hole transport layer 842 , a first light-emitting layer 843 , a second light-emitting layer 844 , and an electron transport layer 845 .

[0089] The second electrode may be a transparent electrode, a reflective electrode, or a semi-transparent electrode.

[0090] The protective layer 806 reduces the penetration of moisture into the organic compound layer. Although the protective layer is illustrated as a single layer, it may be a multi-layer structure. Each layer may be an inorganic compound layer and an organic compound layer.

[0091] The color filters 807 are divided into 807R, 807G, and 807B depending on their colors. The color filters may be formed on a planarization film (not shown). A resin protective layer (not shown) may be disposed on the color filters. The color filters may be formed on a protective layer 806. The color filters may be provided on an opposing substrate such as a glass substrate and then bonded thereto.

[0092] A display device 800 in FIG. 5(b) (corresponding to the light-emitting device 100 described above) includes an organic light-emitting element 826 and a TFT 818 as an example of a transistor. A substrate 811 made of glass, silicon, or the like is provided with an insulating layer 812 on top of it. An active element such as the TFT 818 is disposed on the insulating layer, and a gate electrode 813, a gate insulating film 814, and a semiconductor layer 815 of the active element are disposed on top of the insulating layer. The TFT 818 also includes the semiconductor layer 815, a drain electrode 816, and a source electrode 817. An insulating film 819 is provided on top of the TFT 818. An anode 821 constituting the organic light-emitting element 826 and the source electrode 817 are connected via a contact hole 820 provided in the insulating film.

[0093] The electrical connection between the electrodes (anode, cathode) included in the organic light-emitting element 826 and the electrodes (source electrode, drain electrode) included in the TFT is not limited to the embodiment shown in Figure 5(b). In other words, it is sufficient that either the anode or the cathode is electrically connected to either the TFT source electrode or the drain electrode. TFT stands for thin film transistor.

[0094] 5(b), the organic compound layer 822 is illustrated as a single layer, but may be a multi-layer organic compound layer 822. A first protective layer 824 and a second protective layer 825 are provided on the cathode 823 to reduce deterioration of the organic light-emitting element.

[0095] In the display device 800 of FIG. 5(b), transistors are used as switching elements, but other switching elements may be used instead.

[0096] Furthermore, the transistors used in the display device 800 of Fig. 5(b) are not limited to transistors using single-crystal silicon wafers, but may also be thin-film transistors having an active layer on the insulating surface of a substrate. Examples of active layers include non-single-crystal silicon such as single-crystal silicon, amorphous silicon, and microcrystalline silicon, and non-single-crystal oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Thin-film transistors are also called TFT elements.

[0097] The transistors included in the display device 800 of Figure 5(b) may be formed within a substrate such as a silicon substrate. Here, "formed within a substrate" means that the substrate itself, such as a silicon substrate, is processed to form the transistors. In other words, having a transistor within a substrate can be seen as the substrate and the transistor being formed integrally.

[0098] The organic light-emitting element according to this embodiment has its light emission brightness controlled by a TFT, which is an example of a switching element. By providing multiple organic light-emitting elements on a surface, an image can be displayed based on the respective light emission brightnesses. Here, the switching element according to this embodiment is not limited to a TFT, but may also be a transistor formed from low-temperature polysilicon or an active matrix driver formed on a substrate such as a silicon substrate. "On the substrate" can also be referred to as "inside the substrate." Whether to provide a transistor in the substrate or to use a TFT is determined by the size of the display unit. For example, if the size is about 0.5 inches, the organic light-emitting element may be provided on a silicon substrate.

[0099] 6(a) to 6(c) are schematic diagrams showing an example of an image forming apparatus using the light emitting device 100 of this embodiment. The image forming apparatus 926 shown in Fig. 6(a) includes a photoreceptor 927, an exposure light source 928, a developing unit 931, a charging unit 930, a transfer unit 932, a transport unit 933 (a transport roller in the configuration of Fig. 6(a)), and a fixing unit 935. The light emitting device 100 described above can be used as the exposure light source 928 of the image forming apparatus 926.

[0100] Light 929 is emitted from an exposure light source 928, and an electrostatic latent image is formed on the surface of a photoconductor 927. The light emitting device 100 can be applied to this exposure light source 928. A developing unit 931 contains toner or the like as a developer and can function as a developing device that applies the developer to the exposed photoconductor 927. A charging unit 930 charges the photoconductor 927. A transfer unit 932 transfers the developed image to a recording medium 934. A transport unit 933 transports the recording medium 934. The recording medium 934 can be, for example, paper or film. A fixing unit 935 fixes the image formed on the recording medium.

[0101] 6(b) and 6(c) are schematic diagrams showing an exposure light source 928 in which a plurality of light-emitting sections 936 are arranged along the longitudinal direction of a long substrate. The light-emitting device 100 can be applied to this light-emitting section 936. In other words, a plurality of pixels are arranged along the longitudinal direction of the substrate. A direction 937 is parallel to the axis of the photosensitive member 927. This column direction is the same as the axial direction of the photosensitive member 927 when it rotates. This direction 937 can also be called the long axis direction of the photosensitive member 927.

[0102] FIG. 6(b) shows a configuration in which the light-emitting units 936 are arranged along the longitudinal direction of the photoconductor 927. FIG. 6(c) shows a modified configuration of the arrangement of the light-emitting units 936 shown in FIG. 6(b), in which the light-emitting units 936 are arranged alternately in the column direction in the first and second columns. The light-emitting units 936 are arranged at different positions in the row direction in the first and second columns. In the first column, multiple light-emitting units 936 are arranged at intervals, and in the second column, light-emitting units 936 are arranged at positions corresponding to the gaps between the light-emitting units 936 in the first column. Multiple light-emitting units 936 are also arranged at intervals in the row direction. The arrangement of the light-emitting units 936 shown in FIG. 6(c) can be described as, for example, a grid-like arrangement, a houndstooth arrangement, or a checkerboard pattern.

[0103] FIG. 7 is a schematic diagram illustrating an example of a display device using the light-emitting device 100 of this embodiment. The display device 1000 may include a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. The touch panel 1003 and the display panel 1005 are connected to flexible printed circuits FPCs 1002 and 1004. An active element such as a transistor is disposed on the circuit board 1007. The battery 1008 may not be disposed if the display device 1000 is not a portable device, and even if it is a portable device, it does not need to be disposed in this position. The light-emitting device 100 can be applied to the display panel 1005. Light-emitting elements disposed in the light-emitting device 100 that functions as the display panel 1005 are connected to active elements such as transistors disposed on the circuit board 1007 and operate.

[0104] The display device 1000 shown in FIG. 7 may be used as a display unit of a photoelectric conversion device (which may also be called an imaging device) that has an optical unit with multiple lenses and an imaging element that receives light that has passed through the optical unit and photoelectrically converts it into an electrical signal. The photoelectric conversion device may have a display unit that displays information acquired by the imaging element. The display unit may be a display unit exposed to the outside of the photoelectric conversion device or a display unit located within a viewfinder. The photoelectric conversion device may be a digital camera or a digital video camera.

[0105] FIG. 8 is a schematic diagram illustrating an example of a photoelectric conversion device using the light-emitting device 100 of this embodiment. The photoelectric conversion device 1100 may include a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The photoelectric conversion device 1100 may also be called an imaging device. The light-emitting device 100 of this embodiment can be applied to the viewfinder 1101 or the rear display 1102, which are display units. In this case, the light-emitting device 100 may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the moving speed of the subject, the possibility that the subject will be blocked by an obstruction, and the like.

[0106] Since the timing suitable for capturing an image is often very short, it is better to display information as soon as possible. Therefore, a light emitting device 100 in which pixels including light emitting elements using an organic light emitting material such as an organic EL element are arranged may be used in a viewfinder 1101 or a rear display 1102. This is because organic light emitting materials have a fast response speed. A light emitting device 100 using an organic light emitting material is more suitable than a liquid crystal display device for these devices, which require a high display speed.

[0107] The photoelectric conversion device 1100 has an optical section (not shown). The optical section has multiple lenses, which form an image on a photoelectric conversion element (not shown) housed in a housing 1104 that receives light that has passed through the optical section. The focus of the multiple lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically.

[0108] The light emitting device 100 may be applied to a display unit of an electronic device. In this case, the light emitting device 100 may have both a display function and an operation function. Examples of the portable terminal include a mobile phone such as a smartphone, a tablet, and a head-mounted display.

[0109] FIG. 9 is a schematic diagram showing an example of an electronic device using the light-emitting device 100 of this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit 1202 may be a biometric recognition unit that recognizes a fingerprint to perform unlocking or the like. A portable device having a communication unit can also be called a communication device. The light-emitting device 100 of this embodiment can be applied to the display unit 1201.

[0110] 10(a) and 10(b) are schematic diagrams illustrating an example of a display device using the light-emitting device 100 of this embodiment. FIG. 10(a) illustrates a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The light-emitting device 100 of this embodiment can be applied to the display unit 1302. The display device 1300 may have a base 1303 that supports the frame 1301 and the display unit 1302. The base 1303 is not limited to the form shown in FIG. 10(a). For example, the bottom edge of the frame 1301 may also serve as the base 1303. The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0111] FIG. 10(b) is a schematic diagram illustrating another example of a display device using the light-emitting device 100 of this embodiment. The display device 1310 of FIG. 10(b) is configured to be bendable, and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The light-emitting device 100 of this embodiment can be applied to the first display unit 1311 and the second display unit 1312. The first display unit 1311 and the second display unit 1312 may be a single display unit without any joints. The first display unit 1311 and the second display unit 1312 can be separated by the bending point. The first display unit 1311 and the second display unit 1312 may display different images, or the first display unit and the second display unit 1312 may display a single image.

[0112] FIG. 11 is a schematic diagram illustrating an example of a lighting device using the light-emitting device 100 of this embodiment. The lighting device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. The light-emitting device 100 of this embodiment can be applied to the light source 1402. The optical film 1404 may be a filter that improves the color rendering of the light source. The light diffusion unit 1405 can effectively diffuse light from the light source, such as for lighting, and deliver the light over a wide area. If necessary, a cover may be provided on the outermost part. The lighting device 1400 may include both the optical film 1404 and the light diffusion unit 1405, or only one of them.

[0113] The lighting device 1400 is, for example, a device that illuminates a room. The lighting device 1400 may emit white, daylight white, or any other color from blue to red. It may have a dimming circuit that adjusts the light intensity. The lighting device 1400 may have a power supply circuit connected to the light emitting device 100 that functions as the light source 1402. The power supply circuit is a circuit that converts AC voltage into DC voltage. White has a color temperature of 4200K, and daylight white has a color temperature of 5000K. The lighting device 1400 may also have a color filter. The lighting device 1400 may also have a heat sink. The heat sink dissipates heat from within the device to the outside, and examples of the heat sink include metal with a high specific heat, liquid silicon, etc.

[0114] FIG. 12 is a schematic diagram of an automobile having a tail lamp, which is an example of a vehicle lamp using the light emitting device 100 of this embodiment. The automobile 1500 may have a tail lamp 1501 that is turned on when the brakes are applied, for example. The light emitting device 100 of this embodiment may be used as a headlamp as a vehicle lamp. An automobile is an example of a mobile body, and the mobile body may be a ship, a drone, an aircraft, a railroad vehicle, an industrial robot, or the like. The mobile body may have a body and a lamp provided thereon. The lamp may indicate the current location of the body.

[0115] The light emitting device 100 of this embodiment can be applied to a tail lamp 1501. The tail lamp 1501 may have a protective member that protects the light emitting device 100 functioning as the tail lamp 1501. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, but may be made of polycarbonate or the like. The protective member may also be made by mixing a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like with polycarbonate.

[0116] The automobile 1500 may have a body 1503 and a window 1502 attached thereto. The window may be a window for checking the front and rear of the automobile, or may be a transparent display such as a head-up display. The light-emitting device 100 of this embodiment may be used in the transparent display. In this case, the constituent materials of the electrodes and the like of the light-emitting device 100 are made of transparent materials.

[0117] 13(a) and 13(b), a further application example of the light emitting device 100 of this embodiment will be described. The light emitting device 100 can be applied to systems that can be worn as a wearable device, such as smart glasses, a head-mounted display (HMD), or smart contact lenses. An image capturing and displaying device used in such an application example has an image capturing device capable of photoelectrically converting visible light and a light emitting device capable of emitting visible light.

[0118] 13(a) illustrates glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front side of a lens 1601 of the glasses 1600. In addition, the light emitting device 100 of this embodiment is provided on the back side of the lens 1601.

[0119] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the light emitting device 100 according to each embodiment. The control device 1603 also controls the operations of the image capture device 1602 and the light emitting device 100. The lens 1601 is formed with an optical system for focusing light onto the image capture device 1602.

[0120] FIG. 13(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 include a control device 1612, which is equipped with an imaging device corresponding to the imaging device 1602 and a light-emitting device 100. A lens 1611 includes an optical system for projecting light emitted from the imaging device in the control device 1612 and the light-emitting device 100, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the imaging device and the light-emitting device 100 and controls the operation of the imaging device and the light-emitting device 100. The control device 1612 may also include a gaze detection unit that detects the gaze of the wearer. Infrared light may be used for gaze detection. The infrared light-emitting unit emits infrared light toward the eyeball of a user gazing at a displayed image. An imaging unit having a light-receiving element detects the emitted infrared light reflected from the eyeball, thereby obtaining an image of the eyeball. By providing a reduction means for reducing the amount of light from the infrared light emitting section to the display section in a plan view, degradation of image quality is reduced.

[0121] The gaze of the user relative to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be used for gaze detection using the image of the eyeball. As an example, a gaze detection method based on the Purkinje image formed by reflection of irradiated light on the cornea can be used.

[0122] More specifically, gaze detection processing is performed based on the pupil-corneal reflex method, which calculates a gaze vector representing the direction (rotation angle) of the eyeball based on the pupil image and Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0123] The light emitting device 100 according to the embodiment of the present disclosure may include an imaging device having a light receiving element, and may control the display image based on user line of sight information from the imaging device.

[0124] Specifically, the light emitting device 100 determines a first field of view area where the user gazes and a second field of view area other than the first field of view area based on the line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the light emitting device 100, or may be determined by an external control device and received. In the display area of ​​the light emitting device 100, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0125] The display area includes a first display area and a second display area different from the first display area, and a high-priority area is determined from the first display area and the second display area based on line-of-sight information. The first display area and the second display area may be determined by a control device of the light-emitting device 100, or may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of areas other than the high-priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0126] Note that AI may be used to determine the first field of view area and areas with high priority. The AI ​​may be a model configured to estimate the angle of gaze and the distance to an object in the line of sight from the image of the eyeball, using as training data an image of the eyeball and the actual direction in which the eyeball in the image was looking. The AI ​​program may be included in the light-emitting device 100, the imaging device, or an external device. If included in an external device, it is transmitted to the light-emitting device 100 via communication.

[0127] When display control is performed based on visual recognition detection, the smart glasses can be applied to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured outside information in real time.

[0128] The disclosure of this specification includes the following light-emitting devices, display devices, photoelectric conversion devices, electronic devices, lighting devices, and mobile objects.

[0129] (Item 1) A light emitting device including a substrate on which a pixel region including a plurality of pixels each including a light emitting element and a peripheral region including a circuit for causing the light emitting element to emit light are arranged, a first transistor isolated from a surface of the substrate by an isolation region having a trench structure with a first depth from the surface of the substrate, and a second transistor isolated from a surface of the substrate by an isolation region having a trench structure with a second depth from the surface of the substrate, The light emitting device, wherein the first depth is greater than the second depth.

[0130] (Item 2) 2. The light emitting device according to item 1, wherein the first depth is 300 nm or more deeper than the second depth.

[0131] (Item 3) 3. The light emitting device according to item 1 or 2, wherein the aspect ratio, calculated by dividing the depth by the width in the short side direction, of each of the groove structure of the first depth and the groove structure of the second depth is 1 or more.

[0132] (Item 4) 4. The light emitting device according to any one of items 1 to 3, wherein the thickness of the gate insulating film of the first transistor is thicker than the thickness of the gate insulating film of the second transistor.

[0133] (Item 5) 5. The light emitting device according to any one of items 1 to 4, wherein a higher voltage is applied to the first transistor than to the second transistor.

[0134] (Item 6) the groove structure of the first depth includes a first portion from the surface to a third depth and a second portion from the third depth to the first depth; a width in a lateral direction of the second portion at the third depth is smaller than a width in a lateral direction of the first portion; 6. The light emitting device according to any one of items 1 to 5, wherein the second portion extends from a part of the first portion at the third depth.

[0135] (Item 7) 7. The light emitting device according to item 6, wherein the length from the third depth to the first depth is equal to or greater than the length from the surface to the third depth.

[0136] (Item 8) 8. The light emitting device according to item 6 or 7, wherein the second depth is the same as the third depth.

[0137] (Item 9) A light emitting device described in any one of items 1 to 8, characterized in that the protrusion amount from the surface of the insulator embedded in the groove structure of the first depth is the same as the protrusion amount from the surface of the insulator embedded in the groove structure of the second depth.

[0138] (Item 10) A light emitting device described in any one of items 1 to 8, characterized in that the protrusion amount from the surface of the insulator embedded in the groove structure of the first depth and the protrusion amount from the surface of the insulator embedded in the groove structure of the second depth are different from each other.

[0139] (Item 11) 11. The light emitting device according to any one of items 1 to 10, wherein the width in the lateral direction of the groove structure of the first depth is wider than the width in the lateral direction of the groove structure of the second depth.

[0140] (Item 12) 12. The light emitting device according to any one of items 1 to 11, wherein a transistor isolated by an isolation region having a trench structure of the first depth is arranged in the pixel region.

[0141] (Item 13) The light-emitting device described in any one of items 1 to 12, characterized in that the peripheral area includes a control circuit that performs digital signal processing according to input data, a vertical scanning circuit and a horizontal scanning circuit for scanning the plurality of pixels in accordance with the control circuit, a column DAC circuit that converts digital image data supplied from the control circuit into analog signal voltages, and a column driver circuit that supplies brightness signal data according to the analog signal voltages to the plurality of pixels.

[0142] (Item 14) Item 14. The light emitting device according to item 13, wherein the control circuit includes a transistor isolated by an isolation region having a trench structure of the second depth.

[0143] (Item 15) 15. The light emitting device according to item 13 or 14, wherein the vertical scanning circuit includes transistors isolated by an isolation region having a trench structure of the second depth.

[0144] (Item 16) Item 16. The light emitting device according to item 15, wherein the vertical scanning circuit further includes a transistor isolated by an isolation region having a trench structure of the first depth.

[0145] (Item 17) 17. The light emitting device according to any one of items 13 to 16, wherein the horizontal scanning circuit includes transistors that are isolated by an isolation region having a trench structure of the second depth.

[0146] (Item 19) 18. The light emitting device according to any one of items 13 to 17, wherein the column DAC circuit includes transistors isolated by an isolation region having a trench structure of the first depth.

[0147] (Item 19) 19. The light emitting device according to any one of items 13 to 18, wherein the column driver circuit includes transistors isolated by an isolation region having a trench structure of the first depth.

[0148] (Item 20) 20. A display device comprising: the light-emitting device according to any one of items 1 to 19; and an active element connected to the light-emitting device.

[0149] (Item 21) an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image; 20. A photoelectric conversion device, wherein the display unit displays an image captured by the imaging element, and the photoelectric conversion device comprises the light-emitting device according to any one of items 1 to 19.

[0150] (Item 22) A display unit is provided in the housing, and a communication unit is provided in the housing and communicates with an external device. 20. An electronic device, wherein the display unit comprises the light-emitting device according to any one of items 1 to 19.

[0151] (Item 23) A lighting device having a light source and at least one of a light diffusion unit and an optical film, 20. An illumination device, wherein the light source comprises the light emitting device according to any one of items 1 to 19.

[0152] (Item 24) A moving body having a body and a lighting fixture provided on the body, 20. A moving body, wherein the lighting fixture comprises the light emitting device according to any one of items 1 to 19.

[0153] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0154] 100: light emitting device, 101: pixel, 110: pixel region, 120: peripheral region, 301, 302: element isolation region, 351, 352: transistor, 361, 362: depth

Claims

1. A light emitting device including a substrate on which a pixel region including a plurality of pixels each including a light emitting element and a peripheral region including a circuit for causing the light emitting element to emit light are arranged, a first transistor isolated from a surface of the substrate by an isolation region having a trench structure with a first depth from the surface of the substrate, and a second transistor isolated from a surface of the substrate by an isolation region having a trench structure with a second depth from the surface of the substrate, The light emitting device, wherein the first depth is greater than the second depth.

2. 2. The light emitting device according to claim 1, wherein the first depth is at least 300 nm deeper than the second depth.

3. 2. The light emitting device according to claim 1, wherein an aspect ratio obtained by dividing the depth by the width in the short side direction of each of the groove structure of the first depth and the groove structure of the second depth is 1 or more.

4. 2. The light emitting device according to claim 1, wherein the thickness of the gate insulating film of the first transistor is thicker than the thickness of the gate insulating film of the second transistor.

5. 2. The light emitting device according to claim 1, wherein a voltage applied to the first transistor is higher than a voltage applied to the second transistor.

6. the groove structure of the first depth includes a first portion from the surface to a third depth and a second portion from the third depth to the first depth; a width in a lateral direction of the second portion at the third depth is smaller than a width in a lateral direction of the first portion; The light emitting device according to claim 1 , wherein the second portion extends from a part of the first portion at the third depth.

7. 7. The light emitting device according to claim 6, wherein the length from the third depth to the first depth is equal to or greater than the length from the surface to the third depth.

8. The light emitting device of claim 6 , wherein the second depth is the same as the third depth.

9. 2. The light-emitting device according to claim 1, wherein the protrusion amount from the surface of the insulator embedded in the groove structure of the first depth is the same as the protrusion amount from the surface of the insulator embedded in the groove structure of the second depth.

10. 2. The light-emitting device according to claim 1, wherein the protrusion amount from the surface of the insulator embedded in the groove structure of the first depth is different from the protrusion amount from the surface of the insulator embedded in the groove structure of the second depth.

11. 2 . The light emitting device according to claim 1 , wherein the width in the lateral direction of the groove structure of the first depth is wider than the width in the lateral direction of the groove structure of the second depth.

12. 2. The light emitting device according to claim 1, wherein a transistor isolated by an isolation region having a trench structure of the first depth is arranged in the pixel region.

13. 2. The light-emitting device according to claim 1, wherein the peripheral region includes a control circuit that performs digital signal processing in accordance with input data, a vertical scanning circuit and a horizontal scanning circuit for scanning the plurality of pixels in accordance with the control circuit, a column DAC circuit that converts digital image data supplied from the control circuit into analog signal voltages, and a column driver circuit that supplies brightness signal data corresponding to the analog signal voltages to the plurality of pixels.

14. 14. The light emitting device according to claim 13, wherein the control circuit includes a transistor isolated by an isolation region having a trench structure of the second depth.

15. 14. The light emitting device according to claim 13, wherein the vertical scanning circuit includes transistors isolated by an isolation region having a trench structure of the second depth.

16. 16. The light emitting device according to claim 15, wherein the vertical scanning circuit further comprises a transistor isolated by an isolation region having a trench structure of the first depth.

17. 14. The light emitting device according to claim 13, wherein the horizontal scanning circuit includes transistors isolated by an isolation region having a trench structure of the second depth.

18. 14. The light emitting device according to claim 13, wherein the column DAC circuit includes transistors isolated by an isolation region having a trench structure of the first depth.

19. 14. The light emitting device according to claim 13, wherein the column driver circuit includes transistors isolated by an isolation region having a trench structure of the first depth.

20. A display device comprising: a light-emitting device according to claim 1; and an active element connected to the light-emitting device.

21. an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image; 20. A photoelectric conversion device, wherein the display section displays an image captured by the imaging element, and the photoelectric conversion device comprises the light-emitting device according to claim 1.

22. A display unit is provided in the housing, and a communication unit is provided in the housing and communicates with an external device.

20. An electronic device, wherein the display unit comprises the light-emitting device according to claim 1.

23. A lighting device having a light source and at least one of a light diffusion unit and an optical film, 20. An illumination device, characterized in that the light source comprises a light emitting device according to any one of claims 1 to 19.

24. A moving body having a body and a lighting fixture provided on the body, 20. A moving body, wherein the lighting fixture comprises the light emitting device according to claim 1.

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