Substrate processing apparatus, substrate processing method, and article manufacturing method

Abstract

To provide a technique advantageous in shortening the time required for removing a solvent in a space surrounded by a cover.SOLUTION: The substrate processing apparatus includes an airtight container, a decompression mechanism for decompressing the inside of the airtight container, a substrate holding part arranged inside the airtight container and holding a substrate, and a box-shaped cover arranged inside the airtight container and opened on the side of the substrate holding part. The cover includes a top member facing a main surface of the substrate held by the substrate holding unit, a side wall member facing a side surface of the substrate held by the substrate holding unit, and an inner wall member extending from the top member toward the main surface of the substrate held by the substrate holding unit. The substrate processing apparatus further includes a first gas supply unit configured to supply a gas into an inner space surrounded by the ceiling member and the sidewall member from a side of the sidewall member, and a second gas supply unit configured to supply a gas into the inner space from a side of the inner wall member.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a method for manufacturing an article. [Background technology]

[0002] When manufacturing products such as panels (organic EL panels) having OLEDs (organic light emitting diodes), which are organic EL (electroluminescence) elements, a method of applying a solution film to a desired location on a substrate using an inkjet device is known. A solution film is a film composed of a solution containing a solute and a solvent. A film (layer) is formed on the substrate by drying the solution film applied to the substrate. A reduced pressure drying device, which is a substrate processing device, is used to dry the solution film.

[0003] Patent Document 1 discloses a substrate processing apparatus that includes a cover that is disposed inside an airtight container and covers a substrate, and a tube that is disposed on a side wall of the cover and supplies an inert gas to a space surrounded by the cover. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2023-124794 Summary of the Invention [Problem to be solved by the invention]

[0005] However, as the substrate size increases, the cover size also needs to increase accordingly, which means that in the space enclosed by the cover, the gas supplied from the sidewall of the cover does not reach the center of the substrate, resulting in a difference in solvent vapor concentration between the gas near the center of the substrate and the gas near the edge of the substrate, which may result in a longer time required to remove the solvent adhering to the inner surface of the cover and the solvent vapor in the space enclosed by the cover.

[0006] The present disclosure provides an advantageous technique for reducing the time required for solvent removal in a space enclosed by a cover. [Means for solving the problem]

[0007] A first aspect of the present disclosure is a substrate processing apparatus comprising: an airtight container; a pressure reduction mechanism for reducing the pressure inside the airtight container; a substrate holding unit disposed inside the airtight container and configured to hold a substrate; and a box-shaped cover disposed inside the airtight container and having an open side facing the substrate holding unit, wherein the cover has a top member facing a main surface of the substrate held by the substrate holding unit, side wall members facing a side surface of the substrate held by the substrate holding unit, and an inner wall member extending from the top member toward the main surface of the substrate held by the substrate holding unit, and further comprising: a first gas supply unit for supplying gas from the side of the side wall member to an inner space enclosed by the top member and the side wall member; and a second gas supply unit for supplying gas from the side of the inner wall member to the inner space.

[0008] A second aspect of the present disclosure is a substrate processing apparatus comprising: an airtight container; a pressure reduction mechanism for reducing the pressure inside the airtight container; a substrate holding section disposed inside the airtight container for holding a substrate; and a box-shaped cover disposed inside the airtight container with an open side to the substrate holding section, wherein the cover is configured to define a plurality of spaces and further comprises a gas supply unit for supplying gas to each of the plurality of spaces, wherein the plurality of spaces include a first space and a second space narrower than the first space, and wherein a flow rate of the gas supplied to the second space is smaller than a flow rate of the gas supplied to the first space. [Effects of the Invention]

[0009] According to the present disclosure, there is provided a technique that is advantageous for shortening the time required to remove the solvent from the space surrounded by the cover. [Brief explanation of the drawings]

[0010] [Figure 1]1 is a schematic cross-sectional view showing the configuration of a substrate processing apparatus according to a first embodiment. [Figure 2] FIG. 2 is a plan view of the cover according to the first embodiment. [Figure 3] FIG. 3 is an explanatory diagram of a cover according to the first embodiment. [Figure 4] 1 is a schematic cross-sectional view showing the configuration of a substrate processing apparatus according to a first embodiment. [Figure 5] 4 is a flowchart of a substrate processing method, which is a drying step in the method for manufacturing an article according to the first embodiment. [Figure 6] 6 is a graph showing an example of pressure control in the drying process according to the first embodiment. [Figure 7] 10(a) is a schematic plan view of a substrate S according to a second embodiment, and FIG. 10(b) is an explanatory view of a cover according to the second embodiment. [Figure 8] FIG. 10 is an explanatory diagram of a cover according to a first modified example. [Figure 9] 10(a) is an explanatory view of a cover according to Modification 2. FIG. 10(b) is an explanatory view of a cover according to Modification 3. DETAILED DESCRIPTION OF THE INVENTION

[0011] The following embodiments will be described with reference to the drawings. The following embodiments are merely illustrative, and those skilled in the art can appropriately modify the detailed configurations without departing from the spirit of the present invention. In the drawings referred to in the following description of the embodiments and examples, elements denoted by the same reference numerals have the same functions unless otherwise noted. When multiple identical elements are arranged in a drawing, the reference numerals and their descriptions may be omitted. Furthermore, the drawings may be represented schematically for the convenience of illustration and explanation, and the shape, size, arrangement, etc. of elements depicted in the drawings may not strictly correspond to the actual objects.

[0012] In the following description, directions are indicated using an XYZ coordinate system, which is a Cartesian coordinate system. The X, Y, and Z axes are perpendicular to each other. The direction of the X axis is also referred to as the X direction, the direction of the Y axis as the Y direction, and the direction of the Z axis as the Z direction. For example, the positive direction of the X axis refers to the same direction as the X axis arrow in the coordinate system shown in the figure, and the negative direction of the X axis refers to the direction 180° opposite to the direction of the X axis arrow in the coordinate system shown in the figure. Furthermore, when simply referred to as the X direction, it refers to a direction parallel to the X axis, regardless of whether it is in the direction indicated by the X axis arrow in the figure. The same applies to the Y and Z axes other than the X axis. In the XYZ coordinate system, the X and Y directions are horizontal, and the negative Z direction is vertical. For example, a plane including the X and Y axes is referred to as an XY plane.

[0013] Furthermore, although a solution may be referred to as "ink" in this specification, the ink according to the embodiment is not limited to a solution containing a recording material for forming characters or images. For example, the ink may be a solution containing a functional material for forming a functional thin film such as an electrode or an optical filter, or a functional element such as an organic EL element. The ink may also be a solution containing an insoluble solid component.

[0014] First Embodiment 1 is a schematic cross-sectional view showing the configuration of a substrate processing apparatus SPA according to a first embodiment. The substrate processing apparatus SPA is a reduced-pressure drying apparatus. The substrate processing apparatus SPA is configured to process a substrate S having a solution film F applied thereto as an example of a liquid. More specifically, the substrate processing apparatus SPA is configured to perform a drying process for drying the solution film F on the substrate S.

[0015] The substrate processing apparatus SPA is used in a process for manufacturing an article by processing a substrate S. For example, the substrate processing apparatus SPA is used in part of a process for manufacturing an organic EL panel having an OLED, which is an organic EL element. In the first embodiment, the substrate processing apparatus SPA forms an organic film on the substrate S by performing a drying process for drying a solution film F applied to the substrate S in a reduced pressure environment.

[0016] The substrate S is a large substrate for a flat panel display. The substrate S is, for example, a glass substrate. When the substrate S is transported to the substrate processing apparatus SPA, the main surface MS of the substrate S is parallel to the XY plane, i.e., horizontal. In a plan view (viewed in the Z direction perpendicular to the main surface MS of the substrate S), the main surface MS of the substrate S (the outer shape of the substrate S) is rectangular. The main surface MS of the substrate S includes a plurality of pixel regions arranged in a matrix. One pixel region is made up of three sub-pixel regions, RGB. A solution film F is applied to one sub-pixel region to form an organic film. The sub-pixel region is defined by being surrounded by a bank.

[0017] The solution film F is composed of, for example, a solution (ink) containing a solute and a solvent for forming an organic film. The solvent contained in the solution film F preferably has a property that promotes evaporation in a reduced pressure environment lower than atmospheric pressure (1 atmosphere). The evaporation of the solvent is preferably promoted, for example, at a temperature higher than room temperature (25°C).

[0018] The organic film is, for example, any of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer of an organic light-emitting (OLED) element. The production of an organic EL element includes the steps of forming each organic film, such as a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer, on a substrate S. Before the substrate S is transported to the substrate processing apparatus SPA, a solution film F is applied to required locations on the main surface MS of the substrate S by a coating apparatus.

[0019] Here, drying the substrate S may be expressed as drying the solution film F disposed on the substrate S, evaporating the solvent contained in the solution film F disposed on the substrate S, or drying the solvent contained in the solution film F disposed on the substrate S, but these all have the same meaning. The evaporated solvent is also called solvent gas or solvent vapor.

[0020] The substrate processing apparatus SPA includes an airtight container 10 and a controller 90 that controls the entire substrate processing apparatus SPA. The airtight container 10 is a member (container) that defines a sealed space SP0, which is a chamber. The sealed space SP0 is a space inside the airtight container 10 that is surrounded by the airtight container 10.

[0021] The airtight container 10 includes at least one gate valve 12. The gate valve 12 is movable between an open position and a closed position. A sealed space SP0 is defined by moving the gate valve 12 to the closed position, and the interior of the airtight container 10 is opened by moving the gate valve 12 to the open position. A substrate S to be dried is carried from the outside to the inside of the airtight container 10 through the gate valve 12 moved to the open position. Furthermore, the substrate S that has been dried is carried from the inside to the outside of the airtight container 10 through the gate valve 12 moved to the open position. The substrate S is transported by a transport mechanism RB. The transport mechanism RB is, for example, a robot.

[0022] The substrate processing apparatus SPA further includes a decompression mechanism 30 that decompresses the sealed space SP0 inside the airtight container 10. The decompression mechanism 30 is connected to the airtight container 10. The decompression mechanism 30 is used to decompress the sealed space SP0 to a pressure lower than atmospheric pressure. The decompression mechanism 30 includes, for example, a plurality of pumps. Each pump is, for example, a vacuum pump. The plurality of pumps includes, for example, at least one of an oil rotary pump and a dry pump. The plurality of pumps further includes, for example, at least one of a mechanical booster pump, a turbomolecular pump, a cryopump, a sorption pump, an oil diffusion pump, an ejector pump, and a getter pump.

[0023] The substrate processing apparatus SPA further includes a substrate holding unit 20 that holds a substrate S having a solution film F applied thereto. The substrate holding unit 20 is disposed inside the airtight container 10. The substrate S is placed on the upper surface (flat surface) of the substrate holding unit 20. The substrate processing apparatus SPA further includes a temperature control unit 70 that controls the temperature of the substrate holding unit 20. The temperature control unit 70 typically includes a heater that heats the substrate holding unit 20, but may also include a cooler that cools the substrate holding unit 20, and the temperature control unit 70 performs at least one of heating and cooling on the substrate holding unit 20. In this way, the temperature control unit 70 adjusts the temperature of the substrate S, i.e., the temperature of the solution film F on the substrate S.

[0024] The temperature control unit 70 controls the temperatures of multiple regions of the substrate holding unit 20 uniformly or individually so that the substrate S has a uniform temperature distribution. For example, the temperature control unit 70 controls the temperature so that the difference in temperature between each region of the substrate S held by the substrate holding unit 20 is within 10°C. More preferably, the temperature control unit 70 controls the temperature so that the difference in temperature between each region of the substrate S held by the substrate holding unit 20 is within 5°C. The temperature control unit 70 controls the temperature of the substrate holding unit 20 so that the temperature of the substrate S is a predetermined temperature within the range of 0°C to 100°C. By heating the substrate holding unit 20, the drying speed of the solution film F arranged on the substrate S can be improved.

[0025] The substrate processing apparatus SPA is further provided with a cover 40 that is disposed inside the airtight container 10 and covers the substrate S held by the substrate holding unit 20. Fig. 2 is a plan view of the cover 40 according to the first embodiment. Fig. 3 is an explanatory diagram of the cover 40 according to the first embodiment. Fig. 2 schematically illustrates a view of the cover 40 as viewed in the negative direction of the Z axis. Fig. 3 schematically illustrates a cross section of the cover 40 along an imaginary plane parallel to the XY plane as viewed in the negative direction of the Z axis.

[0026] The cover 40 is a box-shaped member that is open on the side facing the substrate holding portion 20, i.e., the bottom end. The cover 40 has a top member 41 that is arranged in a position facing the main surface MS, which is the upper surface of the substrate S, and a sidewall member 42 that is arranged in a position facing the side surface SS of the substrate S so as to surround the side surface SS of the substrate S. The sidewall member 42 is a frame-shaped member, and the top member 41 is arranged on the upper end of the sidewall member 42. In the first embodiment, the top member 41 and the sidewall member 42 are fixed to each other and formed integrally. An internal space SP2 surrounded by the top member 41 and the sidewall member 42 is defined inside the cover 40. The internal space SP2 is a space in which the substrate S is accommodated.

[0027] The cover 40 has a plurality of openings 44 formed in the top member 41. The arrangement and dimensions of each of the openings 44 are determined so that the solution film F on the substrate S is dried uniformly. The opening area per unit area of ​​the cover 40 is called the aperture ratio. The area of ​​each of the openings 44 or the spacing between the openings 44 is adjusted so that the aperture ratio near the edge of the substrate S is smaller than the aperture ratio near the center of the substrate S. The inner space SP2 of the cover 40 is connected to the outer space SP1 of the cover 40 through the openings 44. The outer space SP1 is the space other than the inner space SP2 in the sealed space SP0. The decompression mechanism 30 decompresses the outer space SP1, thereby decompressing the inner space SP2 through the openings 44. By operating the decompression mechanism 30, solvent vapor evaporated from the solution film F on the substrate S flows from the inner space SP2 through the openings 44 to the outer space SP1 and is then exhausted from the outer space SP1 through the exhaust port of the airtight container 10. The pressure reducing mechanism 30 is connected to the exhaust port of the airtight container 10 via an exhaust duct.

[0028] The substrate processing apparatus SPA further includes a lifting mechanism 80 that lifts and lowers the cover 40 in the Z direction. FIG. 4 is a schematic cross-sectional view showing the configuration of the substrate processing apparatus SPA according to the first embodiment. The lifting mechanism 80 moves the cover 40 between a first position P11 shown in FIG. 1 and a second position P12 shown in FIG. 4 in response to a command from a controller 90. The first position P11 is a position where the cover 40 is lowered, and where the leading ends (lower ends) of the side wall members 42 of the cover 40 contact the upper surface of the substrate holding part 20. The second position P12 is a position where the cover 40 is raised, and where the cover 40 is separated from the substrate holding part 20.

[0029] When the substrate S is subjected to a drying process, the lifting mechanism 80 moves the cover 40 to a first position P11 where the cover 40 is in contact with the substrate holding part 20, and covers the substrate S with the cover 40. With the substrate S covered with the cover 40, a drying process is performed to dry the solution film F on the substrate S. With the sidewall member 42 of the cover 40 in contact with the substrate holding part 20, the inner space SP2 of the cover 40 and the outer space SP1 of the cover 40 communicate mainly through the opening 44. Note that the cover 40 does not necessarily have to have the opening 44, as long as it has a configuration that communicates the inner space SP2 and the outer space SP1 with the substrate S covered.

[0030] When the substrate S is loaded into or unloaded from the substrate holding part 20, the lifting mechanism 80 moves the cover 40 to a second position P12 away from the substrate holding part 20. By moving the cover 40 to the second position P12, the cover 40 is moved away from the substrate holding part 20, allowing the transport mechanism RB to access the top of the substrate holding part 20.

[0031] The lifting mechanism 80 has a motor arranged outside the airtight container 10 and a lifting shaft 81 that is driven to move up and down by the motor. The lifting shaft 81 penetrates the ceiling of the airtight container 10 and is arranged from the inside to the outside of the airtight container 10, and is connected to the cover 40 inside the airtight container 10. An airtight part 11 that keeps the inside of the airtight container 10 airtight is arranged between the airtight container 10 and the lifting shaft 81.

[0032] The cover 40 also has at least one inner wall member 43 extending in the Z direction from the top member 41 toward the main surface MS of the substrate S held by the substrate holding part 20. In the first embodiment, the inner space SP2 is divided into a plurality of (e.g., eight) individual spaces SP3 by the inner wall member 43. That is, the inner wall member 43 is a partition member that divides the inner space SP2 into a plurality of individual spaces SP3. Each individual space SP3 is in contact with the top member 41, the side wall member 42, and the inner wall member 43. In a plan view (when viewed in the Z direction), each individual space SP3 has a rectangular shape.

[0033] The substrate processing apparatus SPA further includes a gas analyzer 60 that detects a specific gas in the inner space SP2, specifically, in any one of the multiple individual spaces SP3. The gas analyzer 60 is a residual gas analyzer (RGA) such as a mass spectrometer. The specific gas detected by the gas analyzer 60 is a gas evaporated from the solution film F on the substrate S, i.e., a gas to be detected. More specifically, the specific gas is solvent vapor.

[0034] The substrate processing apparatus SPA further includes a connection part 62 that connects the gas supply port of the gas analyzer 60 to the internal space SP2 of the cover 40. The gas supply port of the gas analyzer 60 is an opening through which the gas analyzer 60 takes in gas. The connection part 62 is preferably a flexible tube, such as a glass fiber tube. Alternatively, the connection part 62 may be a bellows. The connection part 62 has a first end E1 and a second end E2. The first end E1 is connected to the gas supply port of the gas analyzer 60, and the second end E2 is disposed to protrude from the internal surface of the cover 40 into the internal space SP2. The second end E2 is disposed to protrude from the internal surface of the side wall member 42 of the cover 40 into the internal space SP2, for example.

[0035] The substrate processing apparatus SPA further includes a gas supply part 51 that supplies an inert gas to an outer space SP1 of the sealed space SP0, and a gas supply unit 50 that supplies an inert gas to an inner space SP2 of the sealed space SP0. The gas supply part 51 is used to adjust the pressure inside the airtight container 10. The gas supply unit 50 is used to accelerate drying of the inner surface of the cover 40 and the inner space SP2.

[0036] The gas supply unit 50 has a gas supply unit 52 and a gas supply unit 53. The gas supply unit 52 is configured to supply gas to the inner space SP2 from the side of the side wall member 42. The gas supply unit 53 is configured to supply gas to the inner space SP2 from the side of the inner wall member 43. The gas supply unit 52 is an example of a first gas supply unit, and the gas supply unit 53 is an example of a second gas supply unit.

[0037] The gas supply unit 51 includes a pipe 511 such as a flexible tube and a mass flow controller 101 connected to the pipe 511. The mass flow controller 101 is connected to a gas supply source of an inert gas. The gas supply source is equipment installed in a factory or the like. The pipe 511 is connected to the mass flow controller 101, penetrates the airtight container 10, and protrudes into the outer space SP1. The tip of the pipe 511 serves as a gas supply port 512 for the inert gas into the airtight container 10. The inert gas is supplied from the gas supply port 512 to the outer space SP1. The mass flow controller 101 is preferably disposed outside the airtight container 10. Note that the gas supply unit 51 may include a gas supply port such as a slit or a hole formed in the airtight container 10 instead of the gas supply port 512, and the inert gas may be supplied to the outer space SP1 through the slit or the hole.

[0038] The gas supply unit 52 is configured to supply an inert gas to the inner space SP2 from the side of the sidewall member 42. The gas supply unit 52 includes pipes 521 and 522 such as flexible tubes, a plurality of gas supply ports 523 formed in the sidewall member 42, and a mass flow controller 102. The mass flow controller 102 is connected to a gas supply source. The pipe 521 is connected to the mass flow controller 102. A portion of the pipe 521 is laid inside the elevator shaft 81. The pipe 522 is connected to the pipe 521 and is arranged along the outer periphery of the sidewall member 42. The plurality of gas supply ports 523 are connected to the pipe 522. Each of the plurality of gas supply ports 523 is, for example, a slit or hole formed in the sidewall member 42. The inert gas is supplied from each of the plurality of gas supply ports 523 to the inner space SP2 via the mass flow controller 102, the pipe 521, and the pipe 522. Each of the multiple individual spaces SP3 is connected to at least one gas supply port 523. In this way, in the first embodiment, the gas supply unit 52 supplies an inert gas to each of the multiple individual spaces SP3. Note that in Fig. 3, the blowing direction of the inert gas blown out from the gas supply port 523 is indicated by a white arrow.

[0039] The gas supply unit 53 is configured to supply an inert gas to the inner space SP2 from the side of the inner wall member 43. The gas supply unit 53 has a plurality of (e.g., three) gas supply systems 530. Each gas supply system 530 is configured to supply an inert gas to at least one (e.g., four) of the plurality of individual spaces SP3. Note that, in the first embodiment, a case will be described in which the gas supply unit 53 has a plurality of gas supply systems 530, but this is not limiting, and the gas supply unit 53 may be configured with a single gas supply system.

[0040] Each gas supply system 530 includes a pipe 531 such as a flexible tube, multiple gas supply ports 533 formed in the inner wall member 43, and a mass flow controller 103. The mass flow controller 103 is connected to a gas supply source. The pipe 531 is connected to the mass flow controller 103. A portion of the pipe 531 is laid inside the elevator shaft 81 and the inner wall member 43. The multiple gas supply ports 533 are connected to the pipe 531. Each of the multiple gas supply ports 533 is a slit or hole formed in the inner wall member 43. An inert gas is supplied from each of the multiple gas supply ports 533 to the inner space SP2 via the mass flow controller 103 and the pipe 531. In the first embodiment, the multiple gas supply ports 533 included in each gas supply system 530 are connected to, for example, one of four individual spaces SP3. As a result, at least one gas supply port 533 is connected to each of the eight individual spaces SP3. As described above, in the first embodiment, the gas supply unit 53 supplies the inert gas to each of the individual spaces SP3. In Fig. 3, the blowing direction of the inert gas blown out from the gas supply port 533 is indicated by a gray arrow.

[0041] The direction in which the inert gas is blown out from each gas supply port 523, 533 may be at a downward angle relative to a direction parallel to the XY plane. However, if the inert gas is blown out in a downward angle, the inert gas may be blown directly onto the main surface MS of the substrate S. Therefore, in consideration of the stability of the drying process of the substrate S, it is preferable that the blowing direction be parallel to the XY plane (horizontal direction) or at an upward angle relative to a direction parallel to the XY plane.

[0042] The inert gas is, for example, nitrogen. The gases supplied by the gas supply units 51, 52, and 53 may be gases other than the inert gas, such as clean dry air, as long as they have a composition different from that of the solvent contained in the solution film F.

[0043] The controller 90 is configured to execute a drying process for drying the solution film F on the substrate S, and controls each part of the substrate processing apparatus SPA during the drying process. For example, the controller 90 determines the completion of drying of the solution film F on the substrate S based on the output of the gas analyzer 60. To give a specific example, the controller 90 determines that the drying of the substrate S is complete when the output value of the gas analyzer 60 (i.e., a value indicating the amount of a specific gas) becomes equal to or less than a preset value. The controller 90 also controls the opening and closing operation of the gate valve 12, the lifting and lowering operation of the cover 40 by the lifting mechanism 80, the pressure inside the airtight container 10 by the pressure reducing mechanism 30, and the gas flow rates (volumetric flow rate or mass flow rate) by the mass flow controllers 101 to 103.

[0044] The controller 90 is configured by, for example, a computer. The controller 90 includes a CPU which is an example of a processor, a RAM which is a temporary storage device, a ROM and an SSD which are non-temporary storage devices (recording media), an I / O which is an interface, etc. The non-temporary storage device stores a control program that causes the CPU of the controller 90 to control each part of the entire device in the manufacturing process described below.

[0045] In addition to the above-mentioned configuration, the controller 90 having a processor may be configured using, for example, a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array), an ASIC (Application Specific Integrated Circuit), a general-purpose or dedicated computer with a built-in program, or a combination of all or part of these.

[0046] 5 is a flowchart of a substrate processing method, which is a drying step in the manufacturing method of an article according to the first embodiment. The substrate S is carried inside the cover 40 in the airtight container 10, and a drying step is performed to dry the solution film F on the substrate S, i.e., a step to evaporate the solvent in the solution film F, by controlling the pressure inside the airtight container 10 using the controller 90. The drying step may include multiple drying processes. In each drying process, the controller 90 controls the pressure reduction mechanism 30 to adjust the pressure inside the airtight container 10.

[0047] 5, as shown in Fig. 4, the controller 90 causes the transfer mechanism RB to hold the substrate S on which the solution film F has been applied, causes the transfer mechanism RB to carry the substrate S into the airtight container 10, and causes the transfer mechanism RB to place the substrate S on the substrate holder 20. At this time, the gate valve 12 has moved to the open position, and the cover 40 has moved to the second position P12.

[0048] 1, the controller 90 moves the gate valve 12 from the open position to the closed position, and moves the cover 40 from the second position P12 to the first position P11. That is, the controller 90 controls the lifting mechanism 80 to lower the cover 40 until the cover 40 contacts the upper surface of the substrate holder 20.

[0049] Next, in step S3, the controller 90 executes each drying process in the drying step. The drying process in step S3 will be specifically described below. FIG. 6 is a graph showing an example of pressure control in the drying process according to the first embodiment. The horizontal axis in FIG. 6 represents time, and the vertical axis represents the pressure in the sealed space SP0. The pressure control includes control of the decompression mechanism 30. The pressure in the sealed space SP0 in the airtight container 10 can be detected by a pressure gauge (not shown). In the example of FIG. 6, the multiple drying processes are four drying processes D1 to D4, and the decompression mechanism 30 and each gas supply unit 51 to 53 are controlled in each of the drying processes D1 to D4. The number of drying processes is not limited to four.

[0050] In the drying process D1, the controller 90 controls the decompression mechanism 30 so that the pressure in the sealed space SP0 in the airtight container 10 decreases from atmospheric pressure (1 atmosphere) to a first pressure P1. As a result, the pressure inside the airtight container 10 is reduced to the first pressure P1. The drying process D1 is a process of reducing the pressure from atmospheric pressure to the first pressure P1. The first pressure P1 is a pressure lower than atmospheric pressure and higher than a predetermined pressure. The predetermined pressure is, for example, the vapor pressure (saturated vapor pressure) of the solvent contained in the solution film F.

[0051] Then, after the pressure in the sealed space SP0 reaches the first pressure P1, the controller 90 controls the decompression mechanism 30 and the gas supply unit 51 in the drying process D2 so that the pressure in the sealed space SP0 is maintained at the first pressure P1. That is, the controller 90 operates the decompression mechanism 30 to dry the substrate S in an environment of the first pressure P1. The drying process D2 is an example of a first drying process.

[0052] In the drying process D2, the gas supply unit 51 can adjust the pressure inside the airtight container 10 by supplying an inert gas to the outer space SP1 shown in FIG. 1 . For example, in the drying process D2, the controller 90 can maintain the pressure in the sealed space SP0 at a first pressure P1 by supplying an inert gas from the gas supply unit 51 to the outer space SP1 while the decompression mechanism 30 is performing an exhaust operation. That is, the gas supply unit 51 supplies the inert gas to the sealed space SP0 so that the pressure inside the airtight container 10 exceeds a predetermined pressure (vapor pressure of the solvent) in the drying process D2. Specifically, in the drying process D2, the controller 90 controls the amount of gas exhausted by the decompression mechanism 30 and the amount of gas supplied by the gas supply unit 51 so that the pressure inside the airtight container 10 is the first pressure P1. The pressure inside the airtight container 10 can be determined by adjusting the balance between the amount of gas exhausted by the decompression mechanism 30 and the amount of inert gas supplied. The gas supply unit 51 may supply an inert gas to the outer space SP1 not only in the drying process D2 but also in any of the other drying processes D1, D3, and D4, for example, in the drying process D4. In the drying processes D1 and D2, the supply of the inert gas from the gas supply units 52 and 53 is stopped.

[0053] In the first embodiment, the substrate S is surrounded by a cover 40 to uniformly adjust the pressure distribution around the substrate S, i.e., to uniformly adjust the evaporation rate of the solvent in the solution film F on the substrate S. When the solvent evaporates from the solution film F, the solvent vapor temporarily accumulates in the inner space SP2 surrounded by the cover 40. The cover 40 has multiple openings 44 that communicate the inner space SP2 with the outer space SP1. When the cover 40 is viewed from above (i.e., when the cover 40 is viewed in the Z direction), the multiple openings 44 do not overlap with the inner wall member 43. Solvent vapor flows from the inner space SP2 to the outer space SP1 through these openings 44. The openings 44 may be formed not only in the top member 41 but also in the side wall member 42. The solvent vapor that has flowed into the outer space SP1 is exhausted from the airtight container 10 through an exhaust duct (not shown) by the operation of the pressure reducing mechanism 30.

[0054] In the drying process D2, the pressure in the internal space SP2 is maintained at the first pressure P1, thereby drying the solution film F uniformly. That is, the solution film F can be dried so that the thickness of the dried film obtained by drying the solution film F is uniform. Therefore, the surface of the dried film obtained by drying the solution film F can be made flat. Furthermore, the size and number of the openings 44 are adjusted so that the pressure distribution in the internal space SP2 is uniform while the pressure in the internal space SP2 is maintained at a constant pressure. Therefore, the pressure in the internal space SP2 is finely adjusted, and the solution film F can be dried uniformly more effectively. The shape of the solution film F is roughly determined by the time of the drying process D2.

[0055] Here, during the drying processes D1 and D2, the solvent may adhere to the inner surface of the airtight container 10 and the inner surface of the cover 40. In particular, the solvent adhered to the inner surface of the cover 40 locally increases the pressure near the solvent. That is, a pressure distribution may occur in the inner space SP2. If a pressure distribution occurs in the inner space SP2, unevenness occurs in the drying speed of the substrate S, which causes unevenness in the film thickness on the substrate S. For this reason, it is preferable to remove the solvent adhered to the inner surface of the airtight container 10 and the inner surface of the cover 40, especially the solvent adhered to the inner surface of the cover 40, before the next substrate is dried.

[0056] Therefore, in a drying process D3 after the drying process D2, the controller 90 controls the gas exhaust rate of the decompression mechanism 30 and the gas supply rate of the gas supply units 52 and 53 so that the pressure in the sealed space SP0 in the airtight container 10 decreases from the first pressure P1 to the second pressure P2. As a result, the pressure inside the airtight container 10 is reduced to the second pressure P2. The drying process D3 is a process of reducing the pressure from the first pressure P1 to the second pressure P2. The second pressure P2 is lower than the first pressure P1 and is lower than the vapor pressure (predetermined pressure) of the solvent. Then, in a drying process D4, after the pressure in the sealed space SP0 in the airtight container 10 reaches the second pressure P2, the controller 90 controls the gas exhaust rate of the decompression mechanism 30 and the gas supply rate of the gas supply units 52 and 53 so that the pressure in the sealed space SP0 is maintained at the second pressure P2. That is, the controller 90 operates the decompression mechanism 30 to dry the substrate S under the second pressure P2. The drying process D4 is an example of a second drying process. In the first embodiment, the controller 90 controls the mass flow controllers 102, 103 of the gas supply units 52, 53 to supply an inert gas to the inner space SP2 in the drying process D4.

[0057] In the drying process D4, the gas supply units 52 and 53 supply the inert gas to the inner space SP2 of the cover 40 even when the decompression mechanism 30 is operating, thereby maintaining the pressure in the inner space SP2 at the second pressure P2. That is, the pressure inside the airtight container 10 can be determined by adjusting the balance between the amount of gas exhausted by the decompression mechanism 30 and the amount of inert gas supplied. This shortens the time required to remove the solvent adhering to the inner surfaces of the airtight container 10 and the cover 40. In addition, the inert gas output from the gas supply units 52 and 53 can also function as a means for discharging solvent vapor remaining in the inner space SP2 to the outer space SP1. Note that the gas supply unit 51 may supply the inert gas to the outer space SP1 in the drying process D4.

[0058] After the drying process D3, particularly in the drying process D4, the pressure inside the airtight container 10 is reduced to the second pressure P2 to further dry the solution film F on the substrate S and remove the solvent adhering to the inner surface of the cover 40. In the drying process D4, the solvent adhering to the inner surface of the cover 40 is removed, thereby returning the state of the sealed space SP0 to the state before the drying process D1, and preventing the remaining solvent from affecting the drying process of the next substrate S to be inserted.

[0059] To quickly dry the solution film F on the substrate S, low pressure conditions are preferable. In the first embodiment, drying is performed using multiple drying processes D1 to D4 under different pressure conditions. This allows the thickness of the dried film obtained by drying the solution film F to be uniform. For example, if the pressure inside the airtight container 10 were reduced to the second pressure P2 without performing the drying process D2, the thickness of the dried film obtained by drying the solution film F might not be uniform. However, in the first embodiment, the pressure inside the airtight container 10 is reduced to the second pressure P2 in the drying processes D3 and D4 after the solution film has been dried to a certain extent in the drying process D2, thereby reducing the impact on the film thickness. Therefore, by performing the drying process while gradually reducing the pressure as in the first embodiment, the thickness of the film obtained by drying the solution film F can be made uniform and the drying time of the solution film F can be shortened.

[0060] Here, the gas supply unit 52 can accelerate drying of the solvent adhering to the inner surface of the cover 40 by supplying an inert gas to the inner space SP2 of the cover 40. Therefore, for example, in the drying process D4, the gas supply unit 52 supplies an inert gas to the inner space SP2 while maintaining the pressure in the sealed space SP0 at the second pressure P2, thereby removing the solvent adhering to the inner surface of the cover 40 while drying the solution film F on the substrate S.

[0061] The gas supply unit 52 may supply an inert gas to the inner space SP2 not only in the drying treatments D3 and D4 but also in other drying treatments, such as the drying treatments D1 and D2. That is, it is preferable to supply an inert gas to the inner space SP2 at least in the drying treatment D4 among the drying treatments D1 to D4.

[0062] The gas supply unit 53 supplies the inert gas to the individual space SP3, thereby accelerating the drying of the solvent adhering to the inner surface of the cover 40 in the individual space SP3. Therefore, for example, in the drying process D4, the gas supply unit 53 supplies the inert gas to the individual space SP3 while maintaining the pressure in the sealed space SP0 at the second pressure P2, thereby drying the solution film F on the substrate S and accelerating the removal of the solvent adhering to the inner surface of the top member 41, the inner surface of the side wall member 42, and the surface of the inner wall member 43 that define the individual space SP3.

[0063] The gas supply unit 53 may supply an inert gas to the inner space SP2 not only in the drying processes D3 and D4 but also in other drying processes, such as the drying processes D1 and D2. That is, it is preferable to supply an inert gas to the individual space SP3 in at least the drying process D4 among the drying processes D1 to D4.

[0064] In order to perform the drying process for drying the solution film F on the substrate S uniformly over the entire area of ​​the substrate S, it is advantageous to ensure a suitable distance between the upper surface of the cover 40 and the ceiling surface of the airtight container 10. When the substrate S is loaded into or unloaded from the substrate holding part 20, the substrate holding part 20 may be lowered, but in this case, the height dimension of the substrate processing apparatus SPA will further increase.

[0065] On the other hand, in the first embodiment, the space between the upper surface of the cover 40 and the ceiling surface of the airtight container 10 is used to raise and lower the cover 40 by the lifting mechanism 80, which is advantageous in reducing the size of the airtight container 10. In other words, the configuration in which the cover 40 is raised and lowered by the lifting mechanism 80 is advantageous in reducing the height dimension of the substrate processing apparatus SPA.

[0066] The inner wall member 43 of the cover 40 also functions as a reinforcing member for the cover 40. The inner wall member 43 is advantageous in suppressing deformation of the cover 40 itself that occurs when the cover 40 is enlarged in size in accordance with the enlargement of the substrate S, for example, in suppressing bending due to its own weight, and is advantageous in reducing the height dimension of the substrate processing apparatus SPA compared to a configuration in which a member for suppressing deformation of the cover is provided outside the cover.

[0067] In step S4, the controller 90 determines whether all drying processes have been completed, i.e., whether the drying process has been completed. Whether each drying process has been completed may be determined based on a preset processing time or on the output value of the gas analyzer 60. Furthermore, if the drying process includes multiple drying processes, the controller 90 may perform the determination process of step S4 after the start of the last of the multiple drying processes. Furthermore, although the pressure in the enclosed space SP0 is controlled to different values ​​in the multiple drying processes included in the drying process, this is not a limitation. For example, the multiple drying processes may include two or more drying processes in which the pressure in the enclosed space SP0 is controlled to the same value.

[0068] If step S4 is YES, that is, if all drying processes have been completed, the controller 90 executes the next step S5. If step S4 is NO, that is, if the drying processes have not been completed, the controller 90 returns to the process of step S3 again and continues the drying processes.

[0069] In step S5, the controller 90 moves the gate valve 12 from the closed position to the open position, and raises the cover 40 from the first position P11 to the second position P12.

[0070] In step S6, the controller 90 controls the transfer mechanism RB so that the substrate S held by the substrate holder 20 is carried out to the outside of the airtight container .

[0071] In the first embodiment, drying is performed using multiple drying processes D1 to D4 with different pressure conditions, which makes it possible to achieve both a high drying speed and a uniform thickness of the functional film. Specifically, after the approximate film shape is determined in the drying process D2, the solution film F is dried quickly in the drying process D3 and subsequent processes, thereby forming a film with a uniform thickness.

[0072] Here, although the predetermined pressure is described above as the vapor pressure of the solvent contained in the solution film F, the predetermined pressure may be a pressure different from the vapor pressure of the solvent contained in the solution film F, as long as the predetermined pressure is a value based on the vapor pressure of the solvent contained in the solution film F. For example, in order to make the film thickness of the solution film F more stable and flat, the predetermined pressure may be a pressure slightly higher than the vapor pressure of the solvent contained in the solution film F.

[0073] As described above, according to the first embodiment, the gas supply unit 52 supplies the inert gas to the inner space SP2 from the side of the sidewall member 42, and the gas supply unit 53 supplies the inert gas to the inner space SP2 from the side of the inner wall member 43. This makes it easier for the inert gas to reach the vicinity of the center of the substrate S, and the gas near the center and the edge of the substrate S flows through the opening 44 to the outer space SP1 and is exhausted through the exhaust port of the airtight container 10. The gas in the inner space SP2 is a gas containing an inert gas and solvent vapor. In this way, the solvent vapor near the center and the edge of the substrate S is efficiently exhausted to the outside of the airtight container 10 with the assistance of the inert gas supplied by the gas supply units 52 and 53. This shortens the time required to remove the solvent in the inner space SP2 surrounded by the cover 40.

[0074] In addition, the inner space SP2 is divided into multiple individual spaces SP3 by the inner wall member 43, and an inert gas is supplied to each of the multiple individual spaces SP3 from the side of the inner wall member 43, so that solvent vapor can be more effectively discharged from the inner space SP2 of the cover 40, and the time required to remove the solvent can be more effectively shortened.

[0075] 3, in each of the multiple individual spaces SP3, the gas supply unit 53 is configured to supply the inert gas from a direction different from that of the gas supply unit 52. Specifically, in each individual space SP3, the gas supply port 523 and the gas supply port 533 face in different directions. This allows the solvent vapor to be effectively agitated by the inert gas in each individual space SP3, and the gas containing the solvent vapor in each individual space SP3 to be effectively exhausted from each individual space SP3 to the outer space SP1 through the opening 44.

[0076] The gas supply unit 52 is preferably configured to blow out an inert gas toward the inner wall member 43. That is, as shown in Fig. 3, the inert gas is blown out from each gas supply port 523 toward the inner wall member 43. This makes it easier for the solvent adhering to the inner wall member 43 to evaporate. As a result, the drying time of the drying process D4 can be shortened.

[0077] The piping 531 of the gas supply unit 53 may be routed along the outside of the inner wall member 43, but is preferably arranged inside the inner wall member 43 to define a gas flow path within the inner wall member 43. This reduces unevenness on the inner surface of the cover 40, and even if a solvent adheres to the inner surface of the cover 40, it is easier to evaporate by spraying an inert gas onto it. Note that the gas flow path may be defined by arranging a piping member inside the inner wall member 43, or the gas flow path may be defined by forming holes or slits inside the inner wall member 43. Alternatively, part or all of the inner wall member 43 may be made of a porous member, and the gaps in the porous member may serve as the gas flow path. When part or all of the inner wall member 43 is made of a porous member, the inert gas is uniformly blown out from the porous member into the individual space SP3.

[0078] Furthermore, it is preferable that the cover 40 be raised and lowered by a lifting mechanism 80 relative to the substrate holder 20. This allows the substrate processing apparatus SPA to be miniaturized, which can shorten the time required for the drying process D4.

[0079] When the cover 40 is moved to the first position P11 by the lifting mechanism 80, it is preferable that the inner wall member 43 contacts the main surface MS of the substrate S held by the substrate holding part 20. When the cover 40 is moved to the second position P12 by the lifting mechanism 80, it is preferable that the inner wall member 43 is separated from the main surface MS of the substrate S held by the substrate holding part 20. This reduces the mutual influence of air currents between the multiple individual spaces SP3 in the drying processes D1 to D4.

[0080] In the first embodiment, the material of the top member 41 and the side wall member 42 is metal, for example, stainless steel. On the other hand, the material of the substrate S is a brittle material such as glass. Since the inner wall member 43 comes into contact with the main surface MS of the substrate S, it is preferable that at least the portion that comes into contact with the substrate S is made of resin. For example, a PEEK material or a fluororesin that emits little gas in a vacuum environment is preferable. The portion of the inner wall member 43 that comes into contact with the substrate S is the lower end of the inner wall member 43. In the first embodiment, the lower end of the inner wall member 43 is made of resin. This allows the inner wall member 43 to withstand the vacuum environment and prevents damage to the substrate S even when it comes into contact with the substrate S.

[0081] Second Embodiment The second embodiment will be described. Below, elements with the same reference symbols as those in the first embodiment will have substantially the same configurations and functions as those described in the first embodiment unless otherwise specified, and differences from the first embodiment will be mainly described.

[0082] FIG. 7(a) is a schematic plan view of a substrate S according to a second embodiment. FIG. 7(a) schematically illustrates the substrate S as viewed in the negative direction of the Z axis. The substrate S is a large substrate for a flat panel display. The substrate S is, for example, a glass substrate. Five panels are manufactured by dividing the substrate S into, for example, five parts. In a plan view (viewed in the Z direction), the main surface MS of the substrate S has a rectangular shape. The main surface MS of the substrate S includes five printing areas corresponding to the five panels. In the second embodiment, the main surface MS includes two printing areas S1, three printing areas S2, and a non-printing area S0 other than the printing areas S1 and S2. The multiple printing areas S1 and S2 are spaced apart from each other. The number of printing areas is not limited to five and may be two or more. Here, printing a pattern on the substrate S with a solution means applying a liquid (ink) to the substrate S.

[0083] The area of ​​the printing area S2 is smaller than the area of ​​the printing area S1. That is, the panel corresponding to the printing area S2 is smaller than the panel corresponding to the printing area S1. In plan view (viewed in the Z direction), each of the multiple printing areas S1 and S2 is rectangular.

[0084] A solution film F is applied as a liquid to each of the multiple printing areas S1, S2. Each of the multiple printing areas S1, S2 includes multiple pixel areas arranged in a matrix. One pixel area is made up of three sub-pixel areas, RGB. A solution film F is applied to one sub-pixel area to form an organic film. The sub-pixel area is defined by being surrounded by a bank.

[0085] 7(b) is an explanatory diagram of the cover 40 according to the second embodiment. In the Z direction perpendicular to the main surface MS, the inner wall member 43 is arranged so as not to face any of the multiple printing regions S1, S2 of the substrate S held by the substrate holding part 20. In other words, the inner wall member 43 is arranged so as to face the non-printing region S0. With this arrangement, the drying processes D1 to D4 can be performed in each of the multiple printing regions S1, S2 without interfering with each other.

[0086] In the second embodiment, the inner wall member 43 contacts the main surface MS as in the first embodiment, but it contacts the non-printing region S0 of the main surface MS and does not contact the printing regions S1 and S2. This arrangement allows the drying processes D1 to D4 to be performed in each of the multiple printing regions S1 and S2 without interfering with each other.

[0087] In the Z direction, each of the multiple individual spaces SP3 overlaps with at least one of the multiple printing regions S1, S2. In the second embodiment, in the Z direction, each of the multiple individual spaces SP3 overlaps with one of the multiple printing regions S1, S2. In other words, each of the multiple printing regions S1, S2 is located in one of the multiple individual spaces SP3. With this arrangement, the drying processes D1 to D4 can be performed in each of the multiple printing regions S1, S2 without interfering with each other.

[0088] The multiple individual spaces SP3 include two large spaces SP3-1 and three small spaces SP3-2 that are smaller than the large spaces SP3-1. The printing area S1 is located in the large space SP3-1, and the printing area S2 is located in the small space SP3-2. The large space SP3-1 is an example of a first space, and the small spaces SP3-2 are an example of a second space.

[0089] In the second embodiment, each of the gas supply units 52 and 53 is configured to supply an inert gas to each of the multiple individual spaces SP3. In FIG. 7(b), the white arrow indicates the direction in which the inert gas is blown out from the gas supply port 523 of the gas supply unit 52. In FIG. 7(b), the gray arrow indicates the direction in which the inert gas is blown out from the gas supply port 533 of the gas supply unit 53. As in the first embodiment, as shown in FIG. 7(b), the gas supply port 523 of the gas supply unit 52 and the gas supply port 533 of the gas supply unit 53 are connected to each individual space SP3.

[0090] The flow rate of the inert gas supplied to the small space SP3-2 is preferably smaller than the flow rate of the inert gas supplied to the large space SP3-1. In other words, the flow rate of the inert gas supplied to the large space SP3-1 is preferably larger than the flow rate of the inert gas supplied to the small space SP3-2. The flow rate of the inert gas in each individual space SP3 is controlled by the mass flow controllers 102, 103 of the gas supply unit 50 shown in FIG. 1 based on the number of gas supply ports 523, 533 communicating with each individual space SP3 and the opening area of ​​the gas supply ports 523, 533 communicating with each individual space SP3. As described above, the larger the volume of the individual space SP3 separated by the inner wall member 43, the higher the flow rate of the inert gas (the smaller the volume of the individual space SP3, the lower the flow rate of the inert gas). This allows for effective exhaust of solvent vapor remaining in each individual space SP3. The flow rate of the inert gas may be adjusted based on the amount of solvent applied to the printing area.

[0091] <Variation 1> 8 is an explanatory diagram of a cover 40 according to Modification 1. Modification 1 is a modification of the second embodiment. The main surface MS of the substrate S includes six printing areas corresponding to the six panels. In Modification 1, the main surface MS includes two printing areas S1, two printing areas S2, two printing areas S3, and a non-printing area S0 other than the printing areas S1, S2, and S3.

[0092] The area of ​​print area S3 is smaller than the area of ​​print area S2. That is, the panel corresponding to print area S3 is smaller than the panel corresponding to print area S2. In plan view (viewed in the Z direction), each of the multiple print areas S1, S2, and S3 is rectangular.

[0093] In the Z direction, each of the multiple individual spaces SP3 overlaps at least one of the multiple printing areas S1, S2, and S3. In Modification 1, one individual space SP3, for example, one small space SP3-2, overlaps two printing areas S3. In other words, the two printing areas S3 are located in the small space SP3-2. Even with this arrangement, the drying processes D1 to D4 are stably performed in each individual space SP3.

[0094] <Variation 2> 9(a) is an explanatory diagram of the cover 40 according to Modification 2. Modification 2 is a modification of the first or second embodiment. In the first and second embodiments, it has been described that it is preferable for the inner wall member 43 to contact the main surface MS of the substrate S when the cover 40 is moved to the first position P11, but this is not limited to this. As shown in FIG. 9(a), when the cover 40 is moved to the first position P11, the inner wall member 43 of the cover 40 does not have to contact the main surface MS of the substrate S.

[0095] <Variation 3> Fig. 9(b) is an explanatory diagram of a cover 40 according to Modification 3. Modification 3 is a modification of the first or second embodiment. In the first and second embodiments, it has been described that it is preferable for the inner space SP2 to be divided into a plurality of individual spaces SP3 by the inner wall member 43, but this is not limited to this. As shown in Fig. 9(b), the inner space SP2 does not have to be divided by the inner wall member 43.

[0096] <Embodiments of manufacturing methods of articles> The method for manufacturing an article according to an embodiment of the present disclosure is suitable for manufacturing an article such as an organic light-emitting diode (OLED) panel using a substrate processing apparatus SPA. The method for manufacturing an article according to this embodiment includes a step (coating step) of depositing or applying a solution film (a solution containing a solute and a solvent for forming an organic film) on a substrate by a printing method using an inkjet printing apparatus or the like to obtain a coated substrate. The method also includes a step (drying step) of drying the solution film on the coated substrate using the substrate processing apparatus SPA to obtain a dried substrate on which a dry film has been formed. Furthermore, this manufacturing method includes other well-known steps (such as baking, cooling, dehumidification, dry cleaning, electrode formation, and sealing film formation). The method for manufacturing an article according to this embodiment is advantageous over conventional methods in at least one of the performance, quality, productivity, and production cost of the article.

[0097] The present disclosure is not limited to the above-described embodiments, and many modifications of the embodiments are possible within the technical concept of the present disclosure. Furthermore, the effects described in the present embodiments are merely a list of the most preferable effects resulting from the embodiments of the present disclosure, and are not limited to those described in the present embodiments.

[0098] The disclosure of the above embodiments includes the following sections.

[0099] (Section 1) An airtight container, a pressure reducing mechanism for reducing the pressure inside the airtight container; a substrate holder disposed inside the airtight container and holding a substrate; a box-shaped cover disposed inside the airtight container and having an open side on the substrate holding portion side, The cover is a top member facing a main surface of the substrate held by the substrate holder; a sidewall member facing a side surface of the substrate held by the substrate holding portion; an inner wall member extending from the top member toward a main surface of the substrate held by the substrate holding portion, a first gas supply unit that supplies gas to an inner space surrounded by the top member and the side wall member from a side of the side wall member; a second gas supply unit that supplies gas to the inner space from the side of the inner wall member, A substrate processing apparatus characterized by:

[0100] (Section 2) The inner space is divided into a plurality of spaces by the inner wall member, the second gas supply unit supplies a gas to each of the plurality of spaces. Item 1. A substrate processing apparatus according to item 1.

[0101] (Section 3) the first gas supply unit supplies a gas to each of the plurality of spaces; 3. The substrate processing apparatus according to item 2,

[0102] (Section 4) In each of the plurality of spaces, the second gas supply unit supplies gas from a direction different from that of the first gas supply unit. Item 4. The substrate processing apparatus according to item 3,

[0103] (Section 5) The first gas supply unit is configured to blow gas toward the inner wall member. 5. The substrate processing apparatus according to item 4,

[0104] (Section 6) The second gas supply unit has a gas flow path defined inside the inner wall member. 6. The substrate processing apparatus according to any one of items 1 to 5,

[0105] (Section 7) further comprising a lifting mechanism that lifts and lowers the cover relative to the substrate holding part; 7. The substrate processing apparatus according to any one of items 1 to 6,

[0106] (Section 8) the lifting mechanism moves the cover to a first position where the inner wall member contacts the main surface of the substrate held by the substrate holding portion, and a second position where the inner wall member is separated from the main surface of the substrate held by the substrate holding portion. 8. The substrate processing apparatus according to item 7,

[0107] (Section 9) At least a portion of the inner wall member that comes into contact with the substrate is made of resin. Item 9. The substrate processing apparatus according to item 8, characterized in that:

[0108] (Section 10) the main surface of the substrate includes a print area to which a liquid is applied; the inner wall member is disposed so as not to face the printing area of ​​the substrate held by the substrate holding part in a direction perpendicular to the main surface. 10. The substrate processing apparatus according to any one of items 1 to 9,

[0109] (Section 11) The main surface of the substrate includes a plurality of the printing areas. Item 11. The substrate processing apparatus according to item 10.

[0110] (Section 12) the main surface of the substrate includes a plurality of print areas to which a liquid is applied; the inner wall member is disposed so as not to face the plurality of printing areas of the substrate held by the substrate holding part in a direction perpendicular to the main surface, In a direction perpendicular to the main surface, each of the plurality of spaces overlaps with at least one of the plurality of printing regions. 5. The substrate processing apparatus according to any one of items 2 to 4,

[0111] (Section 13) the plurality of spaces include a first space and a second space narrower than the first space, The flow rate of the gas supplied to the second space is smaller than the flow rate of the gas supplied to the first space. 13. The substrate processing apparatus according to any one of items 2 to 4 and 12,

[0112] (Section 14) the second gas supply unit has a mass flow controller, a controller for controlling the pressure reducing mechanism and the second gas supply unit; the controller is configured to operate the pressure reduction mechanism to perform a first drying process of drying the substrate in an environment of a first pressure that is lower than atmospheric pressure and higher than a predetermined pressure, and to operate the pressure reduction mechanism to perform a second drying process of drying the substrate in an environment of a second pressure that is lower than the predetermined pressure; the controller controls the mass flow controller of the second gas supply unit to supply gas to the inner space in the second drying process. 14. The substrate processing apparatus according to any one of items 1 to 13,

[0113] (Section 15) the cover has a plurality of openings that connect the inner space of the cover to the outer space of the cover; The pressure reducing mechanism exhausts gas from the outer space. 15. The substrate processing apparatus according to any one of items 1 to 14,

[0114] (Section 16) When the cover is viewed from above, the plurality of openings do not overlap with the inner wall member. Item 16. The substrate processing apparatus according to item 15,

[0115] (Section 17) An airtight container, a pressure reducing mechanism for reducing the pressure inside the airtight container; a substrate holder disposed inside the airtight container and holding a substrate; a box-shaped cover disposed inside the airtight container and having an open side on the substrate holding portion side, the cover is configured to define a plurality of spaces; a gas supply unit that supplies a gas to each of the plurality of spaces; the plurality of spaces include a first space and a second space narrower than the first space, The flow rate of the gas supplied to the second space is smaller than the flow rate of the gas supplied to the first space. A substrate processing apparatus characterized by:

[0116] (Section 18) Item 18. A substrate processing method, comprising: processing a substrate using the substrate processing apparatus according to any one of items 1 to 17.

[0117] (Section 19) 1. A method for manufacturing an article, comprising: Item 17 includes a step of processing the substrate using the substrate processing apparatus according to any one of items 1 to 17, A method for manufacturing an article.

[0118] (Section 20) The step of treating the substrate is a step of drying the substrate. 20. The method for producing an article according to item 19, characterized in that: [Explanation of symbols]

[0119] S...substrate, SP0...sealed space, SP1...outer space, SP2...inner space, SP3...individual space (space), SPA...substrate processing apparatus, 10...airtight container, 20...substrate holder, 30...pressure reduction mechanism, 40...cover, 41...top member, 42...side wall member, 43...inner wall member, 44...opening, 50...gas supply unit, 52...gas supply section (first gas supply section), 53...gas supply section (second gas supply section), 90...controller

Claims

1. An airtight container, a pressure reducing mechanism for reducing the pressure inside the airtight container; a substrate holder disposed inside the airtight container and holding a substrate; a box-shaped cover disposed inside the airtight container and having an open side on the substrate holding portion side, The cover is a top member facing a main surface of the substrate held by the substrate holder; a sidewall member facing a side surface of the substrate held by the substrate holding portion; an inner wall member extending from the top member toward a main surface of the substrate held by the substrate holding portion, a first gas supply unit that supplies gas to an inner space surrounded by the top member and the side wall member from a side of the side wall member; a second gas supply unit that supplies gas to the inner space from the side of the inner wall member, A substrate processing apparatus comprising:

2. The inner space is divided into a plurality of spaces by the inner wall member, the second gas supply unit supplies a gas to each of the plurality of spaces. The substrate processing apparatus according to claim 1 .

3. the first gas supply unit supplies a gas to each of the plurality of spaces; The substrate processing apparatus according to claim 2 .

4. In each of the plurality of spaces, the second gas supply unit supplies gas from a direction different from that of the first gas supply unit. The substrate processing apparatus according to claim 3 .

5. The first gas supply unit is configured to blow gas toward the inner wall member.

5. The substrate processing apparatus according to claim 4, wherein the substrate processing apparatus is a processing chamber.

6. The second gas supply unit has a gas flow path defined inside the inner wall member. The substrate processing apparatus according to claim 1 .

7. further comprising a lifting mechanism that lifts and lowers the cover relative to the substrate holding part; The substrate processing apparatus according to claim 1 .

8. the lifting mechanism moves the cover between a first position where the inner wall member contacts the main surface of the substrate held by the substrate holding portion and a second position where the inner wall member is separated from the main surface of the substrate held by the substrate holding portion. The substrate processing apparatus according to claim 7 .

9. At least a portion of the inner wall member that comes into contact with the substrate is made of resin. The substrate processing apparatus according to claim 8 .

10. the main surface of the substrate includes a print area to which a liquid is applied; the inner wall member is disposed so as not to face the printing area of ​​the substrate held by the substrate holding part in a direction perpendicular to the main surface. The substrate processing apparatus according to claim 1 .

11. The main surface of the substrate includes a plurality of the printing areas. The substrate processing apparatus according to claim 10 .

12. the main surface of the substrate includes a plurality of print areas to which a liquid is applied; the inner wall member is disposed so as not to face the plurality of printing areas of the substrate held by the substrate holding part in a direction perpendicular to the main surface, In a direction perpendicular to the main surface, each of the plurality of spaces overlaps with at least one of the plurality of printing regions. The substrate processing apparatus according to claim 2 .

13. the plurality of spaces include a first space and a second space narrower than the first space, The flow rate of the gas supplied to the second space is smaller than the flow rate of the gas supplied to the first space. The substrate processing apparatus according to claim 2 .

14. the second gas supply unit has a mass flow controller, a controller for controlling the pressure reducing mechanism and the second gas supply unit; the controller is configured to operate the pressure reduction mechanism to perform a first drying process of drying the substrate in an environment of a first pressure that is lower than atmospheric pressure and higher than a predetermined pressure, and to operate the pressure reduction mechanism to perform a second drying process of drying the substrate in an environment of a second pressure that is lower than the predetermined pressure; the controller controls the mass flow controller of the second gas supply unit to supply gas to the inner space in the second drying process. The substrate processing apparatus according to claim 1 .

15. the cover has a plurality of openings that connect the inner space of the cover to the outer space of the cover; The pressure reducing mechanism exhausts gas from the outer space. The substrate processing apparatus according to claim 1 .

16. When the cover is viewed from above, the plurality of openings do not overlap with the inner wall member. The substrate processing apparatus according to claim 15 .

17. An airtight container, a pressure reducing mechanism for reducing the pressure inside the airtight container; a substrate holder disposed inside the airtight container and holding a substrate; a box-shaped cover disposed inside the airtight container and having an open side on the substrate holding portion side, the cover is configured to define a plurality of spaces; a gas supply unit that supplies a gas to each of the plurality of spaces; the plurality of spaces include a first space and a second space narrower than the first space, The flow rate of the gas supplied to the second space is smaller than the flow rate of the gas supplied to the first space. A substrate processing apparatus comprising:

18. A substrate processing method, comprising processing a substrate using the substrate processing apparatus according to claim 1 .

19. 1. A method for manufacturing an article, comprising: processing the substrate using the substrate processing apparatus according to any one of claims 1 to 17, A method for manufacturing an article.

20. The step of treating the substrate is a step of drying the substrate.

20. A method for manufacturing an article according to claim 19.

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