Apparatus for manufacturing light emitting device

Abstract

To provide a manufacturing apparatus capable of continuously processing steps from processing to sealing of an organic compound film.SOLUTION: To provide a manufacturing device capable of continuously performing a patterning process of a light-emitting device and a sealing process so that a surface and a side face of an organic layer are not exposed to the atmosphere, and capable of forming a fine light-emitting device with high luminance and high reliability. In addition, the manufacturing apparatus can be incorporated into an in-line manufacturing apparatus in which apparatuses are arranged in the order of steps of the light-emitting device, so that manufacturing can be performed with high throughput.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to an apparatus and a method for manufacturing a light-emitting device.

[0002] Note that one embodiment of the present invention is not limited to the above-mentioned technical field. The technical field of one embodiment of the invention disclosed in this specification relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specific examples of the technical field of one embodiment of the present invention disclosed in this specification include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, memory devices, imaging devices, and operation methods thereof or manufacturing methods thereof. [Background technology]

[0003] In recent years, there has been a demand for higher definition display panels. Devices requiring high-definition display panels include, for example, smartphones, tablet devices, and notebook computers. Furthermore, with the rise in resolution, stationary display devices such as televisions and monitors also require higher definition. Furthermore, devices requiring the highest definition include, for example, devices for virtual reality (VR) or augmented reality (AR).

[0004] Representative examples of display devices that can be used as display panels include liquid crystal display devices, light-emitting devices equipped with light-emitting devices such as organic EL (Electro Luminescence) elements or light-emitting diodes (LEDs: Light Emitting Diodes), and electronic paper that displays using electrophoresis methods.

[0005] For example, the basic structure of an organic EL element, which is a light-emitting element, is a layer containing a light-emitting organic compound sandwiched between a pair of electrodes. By applying a voltage to this element, light can be emitted from the light-emitting organic compound. A display device using such an organic EL element does not require a backlight, which is necessary in liquid crystal display devices and the like, and therefore can realize a thin, lightweight, high-contrast, and low-power display device. For example, an example of a display device using an organic EL element is described in Patent Document 1. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2002-324673 Summary of the Invention [Problem to be solved by the invention]

[0007] Known organic EL display devices capable of full-color display include a configuration in which a white light-emitting device is combined with a color filter, and a configuration in which RGB light-emitting devices are formed on the same surface.

[0008] The latter configuration is ideal in terms of power consumption, and currently, in the manufacture of small and medium-sized panels, the luminescent materials are painted separately using metal masks, etc. However, because the alignment accuracy is low in processes using metal masks, the area occupied by the luminescent device within a pixel must be reduced, making it difficult to increase the aperture ratio.

[0009] Therefore, processes using metal masks pose challenges in increasing pixel density or light emission intensity. To increase the aperture ratio, it is preferable to expand the area of ​​the light-emitting device using a lithography process or other method. However, the reliability of the materials that make up the light-emitting device deteriorates when impurities (water, oxygen, hydrogen, etc.) in the air invade, so multiple processes must be carried out in an atmosphere-controlled area.

[0010] Alternatively, when light-emitting devices are produced using a vacuum deposition method that uses a metal mask, multiple lines of manufacturing equipment are required. For example, because the metal mask needs to be cleaned periodically, at least two or more lines of manufacturing equipment must be prepared, and one manufacturing equipment must be used for production while the other is under maintenance. Therefore, when considering mass production, multiple lines of manufacturing equipment are required. Therefore, there is a problem in that the initial investment for introducing the manufacturing equipment is very large.

[0011] Additionally, small, high-resolution displays are desired for AR and VR applications. Displays for AR and VR applications are preferably narrow-framed because they are installed in devices with small volumes, such as eyeglasses or goggles. Therefore, it is preferable to provide drivers for pixel circuits below the pixel circuits.

[0012] Therefore, one object of one embodiment of the present invention is to provide a light-emitting device manufacturing apparatus that can continuously perform steps from processing an organic compound film to sealing without exposure to the atmosphere. Another object is to provide a light-emitting device manufacturing apparatus that can continuously perform steps from forming a light-emitting device to sealing. Another object is to provide a light-emitting device manufacturing apparatus that can form a light-emitting device without using a metal mask. Another object is to provide a light-emitting device manufacturing method.

[0013] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract other problems from the description of the specification, drawings, claims, etc. [Means for solving the problem]

[0014] One aspect of the present invention relates to an apparatus for manufacturing a light-emitting device.

[0015] One aspect of the present invention is a semiconductor device including a load chamber, a first etching apparatus, a plasma processing apparatus, a waiting chamber, a film formation apparatus, a second etching apparatus, an unload chamber, a transfer chamber, and a transport apparatus, the transport apparatus being provided in the transfer chamber, and the load chamber, the first etching apparatus, the plasma processing apparatus, the waiting chamber, the film formation apparatus, the second etching apparatus, and the unload chamber being connected to the transfer chamber via gate valves, and the transport apparatus being provided in the load chamber, the first etching apparatus, the plasma processing apparatus, the waiting chamber, the film formation apparatus, the unload chamber, and the transport apparatus being connected to the load chamber, the first etching apparatus, the plasma processing apparatus, the waiting chamber, the film formation apparatus, the unload chamber, and the transport chamber. The light-emitting device manufacturing apparatus can transfer a workpiece from one of the first etching apparatus, the second etching apparatus, and the unloading chamber to any one of the others. The workpiece, which has an organic compound film, a first inorganic film, and a resist mask laminated in this order on a silicon substrate, is loaded into the loading chamber, and is transported through the first etching apparatus, plasma processing apparatus, waiting chamber, film forming apparatus, and second etching apparatus in this order. The organic compound film is processed into an island-shaped organic compound layer, a protective layer is formed on the side of the organic compound layer, and the workpiece is then transported to the unloading chamber.

[0016] The first etching device is a dry etching device, and can form a first inorganic film in an island shape using a resist mask as a mask, and can form an organic compound film in an island shape using the island-shaped first inorganic film as a mask.

[0017] The first etching device may also have an ashing function for removing the resist mask.

[0018] The plasma processing apparatus can irradiate the side surfaces of the island-shaped organic compound layer with plasma generated from an inert gas, thereby cleaning the side surfaces of the island-shaped organic compound layer.

[0019] The waiting room can accommodate a plurality of workpieces.

[0020] The film formation apparatus is an ALD apparatus, and can form a first inorganic film and a second inorganic film that covers the island-shaped organic compound layer. The film formation apparatus can be a batch type.

[0021] The second etching device is a dry etching device, and by anisotropically etching the second inorganic film, a protective layer can be formed on the side surfaces of the island-shaped organic compound layer.

[0022] The light-emitting device manufacturing apparatus may be configured such that the above-mentioned light-emitting device manufacturing apparatus is a third cluster, multiple devices that perform the resist mask photolithography process are a second cluster, and multiple devices that perform the organic compound film and first inorganic film deposition process are a first cluster.

[0023] The first cluster, the second cluster, and the third cluster can be connected in that order.

[0024] Furthermore, between the first cluster and the second cluster, and between the second cluster and the third cluster, the workpieces may be stored in containers controlled to have an inert gas atmosphere and transferred.

[0025] Furthermore, the light-emitting device manufacturing apparatus may be configured to have three combinations of the first cluster, the second cluster, and the third cluster.

[0026] The first cluster may include a surface treatment device, which may use plasma generated from a gas containing a halogen.

[0027] The first cluster can have one or more film formation devices selected from an evaporation device, a sputtering device, a CVD device, and an ALD device.

[0028] The second cluster may include a coater, an exposure tool, a developer, and a bake tool. [Effects of the Invention]

[0029] By using one embodiment of the present invention, it is possible to provide a manufacturing apparatus for a light-emitting device that can continuously perform steps from processing an organic compound film to sealing without exposure to the atmosphere. Alternatively, it is possible to provide a manufacturing apparatus for a light-emitting device that can continuously perform steps from forming a light-emitting device to sealing. Alternatively, it is possible to provide a manufacturing apparatus for a light-emitting device that can form a light-emitting device without using a metal mask. Alternatively, it is possible to provide a manufacturing method for a light-emitting device.

[0030] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these can be extracted from the description in the specification, drawings, claims, etc. [Brief explanation of the drawings]

[0031] [Figure 1] FIG. 1 is a diagram illustrating the manufacturing apparatus. [Figure 2] 2A and 2B are diagrams illustrating a manufacturing apparatus. [Figure 3] FIG. 3 is a block diagram illustrating the manufacturing apparatus. [Figure 4] FIG. 4 is a diagram illustrating the manufacturing apparatus. [Figure 5] FIG. 5 is a diagram illustrating the manufacturing apparatus. [Figure 6] FIG. 6 is a diagram illustrating the manufacturing apparatus. [Figure 7] FIG. 7 is a diagram illustrating a manufacturing apparatus. [Figure 8] FIG. 8 is a diagram illustrating the manufacturing apparatus. [Figure 9] FIG. 9 is a block diagram illustrating the manufacturing apparatus. [Figure 10] FIG. 10 is a diagram illustrating the manufacturing apparatus. [Figure 11] FIG. 11 is a diagram illustrating a manufacturing apparatus. [Figure 12] 12A to 12C are diagrams for explaining the transportation of a substrate. [Figure 13] 13A to 13C are diagrams for explaining the transportation of a substrate. [Figure 14] FIG. 14 is a diagram illustrating a manufacturing apparatus. [Figure 15] 15A and 15B are diagrams for explaining the loading and unloading of cassettes, and Fig. 15C is a diagram for explaining a transport vehicle and a transport container. [Figure 16] Fig. 16A is a diagram illustrating a vacuum process device, and Fig. 16B is a diagram illustrating the loading of a substrate into the vacuum process device. [Figure 17] 17A to 17C are diagrams showing an example of the number of display devices that can be taken per substrate. [Figure 18] 18A to 18G are diagrams illustrating a vacuum process device. [Figure 19] FIG. 19 is a diagram illustrating a display device. [Figure 20] 20A to 20C are diagrams illustrating a display device. [Figure 21] 21A to 21F are diagrams illustrating a method for manufacturing a display device. [Figure 22] 22A to 22F are diagrams illustrating a method for manufacturing a display device. [Figure 23] 23A to 23F are diagrams illustrating a method for manufacturing a display device. [Figure 24] 24A to 24F are diagrams illustrating a method for manufacturing a display device. [Figure 25] Figures 25A and 25B are diagrams illustrating a method for manufacturing a display device, Figures 25C and 25D are enlarged views of Figure 25B, and Figures 25E and 25F are diagrams illustrating the display device. [Figure 26] FIG. 26 is a diagram illustrating a manufacturing apparatus. [Figure 27] FIG. 27 is a diagram illustrating the results of TDS measurements. DETAILED DESCRIPTION OF THE INVENTION

[0032] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various modifications in form and detail may be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same parts or parts having similar functions will be designated by the same reference numerals in different drawings, and repeated description thereof may be omitted. In addition, hatching of the same elements constituting the drawings may be omitted or changed as appropriate in different drawings.

[0033] (Embodiment 1) In this embodiment, a manufacturing apparatus for a light-emitting device according to one embodiment of the present invention will be described with reference to the drawings.

[0034] One aspect of the present invention is a manufacturing apparatus used to form a display device having a light-emitting device (also called a light-emitting element) such as an organic EL element. To miniaturize the organic EL element or increase the area occupied by a pixel, a lithography process is preferably used. However, the intrusion of impurities such as water, oxygen, and hydrogen into the organic EL element can impair its reliability. Therefore, it is necessary to devise measures such as sealing the surface and side surfaces of the patterned organic layer to prevent exposure to the atmosphere and controlling the atmosphere to an inert gas with a low dew point from the manufacturing stage.

[0035] Furthermore, the manufacturing apparatus of one embodiment of the present invention can perform the film formation process, lithography process, etching process, and sealing process for forming a light-emitting device in succession without exposure to the atmosphere. Therefore, a fine light-emitting device with high brightness and reliability can be formed. Furthermore, the manufacturing apparatus of one embodiment of the present invention is an in-line type in which the apparatuses are arranged in the order of the processes for the light-emitting device, and can perform manufacturing with high throughput.

[0036] Furthermore, a silicon wafer can be used as a support substrate for forming a light-emitting device. A silicon wafer on which a driving circuit, a pixel circuit, and the like have been formed in advance can be used as a support substrate, and a light-emitting device can be formed on these circuits. Therefore, a display device with a narrow frame suitable for AR or VR can be formed. The silicon wafer preferably has a diameter of 8 inches or more (for example, a diameter of 12 inches). Note that the support substrate for forming a light-emitting device is not limited to the above. For example, glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor (for example, GaAs), etc. can be used as a support substrate for forming a light-emitting device.

[0037] <Configuration example 1> 1 is a diagram illustrating a manufacturing apparatus for a light-emitting device according to one embodiment of the present invention. This manufacturing apparatus can perform the steps of processing an organic compound film into an island-shaped organic compound layer and forming a layer to protect the organic compound layer during the manufacturing process of a light-emitting device. Therefore, the organic compound layer, which is a component of the light-emitting device, can be removed from the unloading chamber without being exposed to the atmosphere, allowing for the formation of a highly reliable light-emitting device.

[0038] The manufacturing equipment includes a load chamber LD, an unload chamber ULD, a waiting chamber W, a transfer chamber TF, and a plurality of processing chambers. A transfer device 70 is provided in the transfer chamber TF.

[0039] The load chamber LD, waiting chamber W, unload chamber ULD and a plurality of processing chambers are each connected to the transfer chamber TF via a gate valve 40 .

[0040] The transfer device 70 can transfer a workpiece from one of the load chamber LD, waiting chamber W, unload chamber ULD, or individual processing chambers to another. In this specification, a group of devices that share a transfer device is called a cluster. The workpiece is an object to be processed in a manufacturing device, and includes not only unprocessed objects but also objects that have undergone multiple processes.

[0041] During operation of the manufacturing equipment, the load chamber LD and unload chamber ULD are controlled to reduced pressure or normal pressure, while the transfer chamber TF, waiting chamber W, and multiple processing chambers are controlled to reduced pressure.

[0042] The multiple processing chambers may include, for example, an etching apparatus E1, a plasma processing apparatus C, a film forming apparatus D, and an etching apparatus E2. The workpiece to be input into the manufacturing apparatus may have, for example, a laminate in which an organic compound film, an inorganic film, and a resist mask are laminated in this order.

[0043] The etching equipment E1 can be a dry etching equipment. The etching equipment E1 can be used in a process of processing an inorganic film or an organic compound film, which is a workpiece, into an island-shaped organic compound layer. The etching equipment E1 may also have an ashing function. The ashing function can remove the resist mask.

[0044] The plasma processing device C has, for example, a pair of parallel plate electrodes, and can generate plasma by applying a voltage to the electrodes in an inert gas atmosphere under reduced pressure. By irradiating the workpiece with plasma generated from the inert gas, reaction products and adsorbed gases remaining on the surface of the workpiece can be removed. As the inert gas, for example, noble gases such as high-purity helium, argon, and neon, nitrogen, or a mixture thereof can be used.

[0045] It is also preferable to perform a vacuum bake treatment in the same apparatus either before or after the plasma treatment to remove surface-adsorbed water, etc. The vacuum bake treatment is preferably performed within a temperature range that does not alter the organic compound layer, for example, 70°C to 120°C, more preferably 80°C to 100°C. The vacuum bake treatment may also be performed in the film formation apparatus D before the film formation in the next step.

[0046] Multiple workpieces can be placed on standby in the standby chamber W. For example, when the film forming apparatus D is a batch processing type, the throughput can be improved by proceeding with processing in the etching apparatus E1 and the plasma processing apparatus C while multiple workpieces are placed on standby in the standby chamber W.

[0047] Furthermore, a plurality of waiting chambers W may be provided. For example, a waiting chamber W may be provided in which workpieces are kept waiting after batch processing is completed in the film forming apparatus D. By removing all workpieces from the film forming apparatus D, the next processing can be performed in the film forming apparatus D, thereby improving throughput.

[0048] The film forming apparatus D may be, for example, an evaporation apparatus, a sputtering apparatus, a CVD (Chemical Vapor Deposition) apparatus, or an ALD (Atomic Layer Deposition) apparatus. In particular, it is preferable to use an ALD apparatus, which has excellent compatibility. The film forming apparatus D can form a protective film, such as an inorganic film, that covers an island-shaped organic compound layer. The film forming apparatus D is not limited to forming a single layer, but can also form two or more layers of different types of films. Furthermore, the film forming apparatus D is not limited to a batch processing type, but may also be a single-wafer processing type.

[0049] The etching device E2 can be a dry etching device capable of anisotropic etching. By anisotropically etching the protective film covering the island-shaped organic compound, a portion of the protective film can be left on the side surface of the island-shaped organic compound. This portion of the protective film can function as a protective layer that protects the side surface of the island-shaped organic compound.

[0050] By providing an inorganic film or the like on the top surface of the island-shaped organic compound layer in advance, and then sequentially performing processing using the etching device E1, plasma processing device C, film forming device D, and etching device E2, a protective layer is provided on the side surface of the island-shaped organic compound layer, thereby sealing the island-shaped organic compound layer.

[0051] Therefore, even when the workpiece is removed from the unloading chamber into the atmosphere after processing, the island-shaped organic compound layer is not exposed to the atmosphere, and a highly reliable light-emitting device can be formed. The manufacturing process of a light-emitting device using this manufacturing apparatus will be described in detail later.

[0052] The manufacturing apparatus may also have the configuration shown in Fig. 2A. The manufacturing apparatus shown in Fig. 2A differs from the manufacturing apparatus shown in Fig. 1 in that it includes a surface treatment apparatus S.

[0053] The surface treatment device S can be configured similarly to the plasma treatment device C and can perform a surface treatment process. The surface condition (wettability, etc.) of the workpiece may change due to treatment in the etching device E2. If the next process for the workpiece removed from the unloading chamber ULD is to form an organic compound film, defects such as peeling may occur if the surface of the workpiece is not in an appropriate condition. Therefore, it is preferable to improve the surface condition of the workpiece by plasma treatment using a halogen-containing gas in the surface treatment device S.

[0054] For example, if the surface to be coated is an oxide, the oxide surface may become hydrophilic when processed using etching equipment E1 or E2. In this case, plasma processing using a fluorine-based gas can be used to replace the hydrophilic groups on the surface to be coated with fluorine or fluoroalkyl groups, thereby making the surface hydrophobic and preventing peeling defects. Examples of fluorine-based gases that can be used include fluorocarbons such as CF4, C2F6, C4F6, C4F8, and CHF3, as well as SF6 and NF3. Helium, argon, or hydrogen may also be added to these gases.

[0055] Alternatively, a coating device may be used as the surface treatment device S. For example, methods such as spin coating, dip coating, or spray coating, or a method of exposing the workpiece to a coating agent atmosphere, can be used. The coating agent can be, for example, a silane coupling agent such as HMDS (Hexamethyldisilazane), which can make the surface of the workpiece hydrophobic.

[0056] If the surface treatment device S is not required, another device may be installed in the position of the surface treatment device S. For example, the throughput can be increased by using multiple devices with long processing times among the etching device E1, plasma treatment device C, film formation device D, and etching device E2 and performing processing in parallel using these devices.

[0057] For example, multiple film formation apparatuses D may be provided. In the film formation apparatus D of the manufacturing apparatus in FIG. 1, two or more layers of different types of films may be formed. Even if there is only one film formation apparatus D, if the film formation apparatus D is an ALD apparatus or a CVD apparatus, different films can be formed by switching the source gas, or if the film formation apparatus D is a sputtering apparatus, by switching the target.

[0058] However, since it is difficult to install different types of film formation apparatuses, such as an ALD apparatus and a sputtering apparatus, in one chamber, a plurality of film formation apparatuses D may be installed.

[0059] Alternatively, other processes may be performed in other devices provided at the location of the surface treatment device S. The surface treatment device S may be provided in the configuration of Fig. 1. The surface treatment device S may also be provided in a different cluster that is responsible for the film formation process.

[0060] The manufacturing apparatus may also have the configuration shown in Fig. 2B. The manufacturing apparatus shown in Fig. 2B differs from the manufacturing apparatus shown in Fig. 1 in that the waiting chamber W is omitted.

[0061] If the process time of the film formation apparatus D is not rate-limiting for the throughput of the entire apparatus, it is possible to omit the waiting chamber W. For example, if the film formation apparatus D is a single-wafer type and capable of high-speed film formation, it can have the configuration shown in FIG. 2B.

[0062] <Configuration example 2> 3 is a block diagram illustrating a light-emitting device manufacturing apparatus according to one embodiment of the present invention. The manufacturing apparatus has a plurality of clusters arranged in the order of processes, some of which have the manufacturing apparatus of Configuration Example 1 as a cluster. A substrate on which a light-emitting device is to be formed moves sequentially through the plurality of clusters and is subjected to each process.

[0063] 3 is an example of a manufacturing apparatus having clusters C1 to C18. Clusters C1 to C18 are connected in order, and substrate 60a introduced into cluster C1 can be taken out of cluster C18 as substrate 60b on which a light-emitting device is formed.

[0064] Here, clusters C1, C3, C5, C7, C9, C11, C13, C15, and C17 have equipment groups for performing processes under atmosphere control. Clusters C2, C4, C6, C10, C12, C14, C16, and C18 have equipment groups for performing vacuum processes (reduced pressure processes). The clusters shown in Configuration Example 1 can be used as clusters C4, C8, and C12.

[0065] Clusters C1, C5, and C9 mainly include equipment for cleaning and baking substrates. Clusters C2, C6, and C10 mainly include equipment for forming organic compounds contained in light-emitting devices. Clusters C3, C7, C11, and C15 mainly include equipment for lithography processes. Clusters C4, C8, C12, and C14 mainly include equipment for etching, ashing, and protective layer formation processes. Cluster C13 mainly includes equipment for resin filling processes. Clusters C16 and C17 mainly include equipment for etching processes. Cluster C18 mainly includes equipment for forming organic compounds contained in light-emitting devices and equipment for forming protective films that seal light-emitting devices.

[0066] Next, clusters C1 to C18 will be described in detail with reference to FIGS.

[0067] <Cluster C1 to Cluster C4> 4 is a top view illustrating clusters C1 to C4. Cluster C1 is connected to cluster C2 via load lock chamber B1. Cluster C2 is connected to cluster C3 via load lock chamber B2. Cluster C3 is connected to cluster C4 via load lock chamber B3. Cluster C4 is connected to cluster C5 (see FIG. 3) via load lock chamber B4.

[0068] <Atmospheric pressure process equipment A> Cluster C1 and cluster C3 each have atmospheric pressure process equipment A. Cluster C1 has a transfer chamber TF1 and atmospheric pressure process equipment A (atmospheric pressure process equipment A1, A2) that mainly performs processes under atmospheric pressure. Cluster C3 has a transfer chamber TF3 and atmospheric pressure process equipment A (atmospheric pressure process equipment A3 to A7). Cluster C1 is also provided with a load chamber LD.

[0069] The number of atmospheric pressure process equipment A in each cluster may be one or more depending on the purpose. The atmospheric pressure process equipment A is not limited to processes under atmospheric pressure, and may be controlled to a slightly negative or positive pressure compared to atmospheric pressure. Furthermore, when multiple atmospheric pressure process equipment A are provided, the atmospheric pressures may be different for each equipment.

[0070] The transfer chambers TF1 and TF3 and the atmospheric pressure process equipment A are connected to valves for introducing inert gas (IG), allowing their interiors to be controlled to an inert gas atmosphere. The inert gas can be nitrogen or a noble gas such as argon or helium. It is also preferable that the inert gas has a low dew point (for example, below -50°C). By carrying out the process in an inert gas atmosphere with a low dew point, the incorporation of impurities can be prevented, resulting in the formation of highly reliable light-emitting devices.

[0071] The atmospheric pressure process equipment A of the cluster C1 can be a cleaning equipment, a baking equipment, etc. For example, a spin cleaning equipment, a hot plate type baking equipment, etc. The baking equipment can be a vacuum baking equipment.

[0072] The atmospheric pressure process equipment A of cluster C3 can be an equipment for performing a lithography process. For example, when performing a photolithography process, a resin (photoresist) coating equipment, an exposure equipment, a developing equipment, a baking equipment, etc. can be applied. When performing a lithography process using nanoimprinting, a resin (UV curable resin, etc.) coating equipment, a nanoimprinting equipment, etc. can be applied. In addition, depending on the application, a cleaning equipment, a wet etching equipment, a coating equipment, a resist stripping equipment, etc. can also be applied to the atmospheric pressure process equipment A.

[0073] Cluster C1 shows an example in which atmospheric pressure process equipment A1 and A2 are each connected to transfer chamber TF1 via a gate valve. Cluster C3 shows an example in which atmospheric pressure process equipment A3 to A7 are each connected to transfer chamber TF3 via a gate valve. The provision of gate valves enables air pressure control, inert gas species control, and cross-contamination prevention.

[0074] The transfer chamber TF1 is connected to the load chamber LD via a gate valve, and also to the load lock chamber B1 via another gate valve. A transfer device 70a is provided in the transfer chamber TF1. The transfer device 70a can transfer a substrate from the load chamber LD to the atmospheric pressure process equipment A. The transfer device 70a can also transfer a substrate taken out of the atmospheric pressure process equipment A to the load lock chamber B1.

[0075] Transfer chamber TF3 is connected to load lock chamber B2 via a gate valve, and also to load lock chamber B3 via another gate valve. Transfer chamber TF3 is provided with a transfer device 70b. Transfer device 70b can transfer substrates from load lock chamber B2 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B3.

[0076] <Vacuum Process Equipment V> Cluster C2 and cluster C4 each have a vacuum process apparatus V. Cluster C2 has a transfer chamber TF2 and a vacuum process apparatus V (vacuum process apparatuses V1 to V5). Cluster C4 has a transfer chamber TF4 and a vacuum process apparatus V (vacuum process apparatuses V6 to V10).

[0077] The number of vacuum process devices V in each cluster may be one or more depending on the purpose. A vacuum pump VP is connected to the vacuum process device V, and a gate valve is provided between each vacuum process device V and the transfer chamber TF (transfer chambers TF2 and TF4). Therefore, different processes can be performed in parallel in each vacuum process device V.

[0078] The vacuum process refers to a process carried out in a controlled environment under reduced pressure. Therefore, the vacuum process includes not only a process under high vacuum, but also a process in which a process gas is introduced and pressure is controlled under reduced pressure.

[0079] The transfer chambers TF2 and TF4 are also provided with independent vacuum pumps VP, which can prevent cross-contamination during the processes performed in the vacuum process equipment V.

[0080] The vacuum process equipment V of cluster C2 can be, for example, a surface treatment equipment, or a film formation equipment such as a deposition equipment, a sputtering equipment, a CVD equipment, an ALD equipment, etc. The surface treatment equipment can have the functions of the surface treatment equipment S described in FIG. 2B, and is preferably a plasma treatment equipment in this case.

[0081] The CVD apparatus may be a thermal CVD apparatus that uses heat, or a PECVD (Plasma Enhanced CVD) apparatus that uses plasma, etc. The ALD apparatus may be a thermal ALD apparatus that uses heat, or a PEALD (Plasma Enhanced ALD) apparatus that uses plasma-excited reactants, etc.

[0082] The vacuum process equipment V of cluster C4 can be the equipment shown in Configuration Example 1, such as a dry etching equipment (with an ashing function), a plasma processing equipment (cleaning), an ALD equipment, a dry etching equipment, etc. Alternatively, the waiting room W shown in FIG.

[0083] Transfer chamber TF2 is connected to load lock chamber B1 via a gate valve, and also to load lock chamber B2 via another gate valve. A transfer device 71a is provided in transfer chamber TF2. The transfer device 71a can transfer a substrate placed in load lock chamber B1 upside down to the vacuum process device V. The transfer device 71a can also transfer a substrate removed from vacuum process device V upside down to the load lock chamber B2.

[0084] Transfer chamber TF4 is connected to load lock chamber B3 via a gate valve and to load lock chamber B4 via another gate valve. A transfer device 70c is provided in transfer chamber TF4. The transfer device 70c can transfer a wafer from load lock chamber B3 to vacuum process device V and then back to load lock chamber B4.

[0085] Load-lock chambers B1, B2, B3, and B4 are each equipped with a vacuum pump VP and a valve for introducing inert gas. Therefore, the load-lock chambers B1, B2, B3, and B4 can be controlled to a reduced pressure or an inert gas atmosphere. For example, when transferring a substrate from cluster C2 to cluster C3, the load-lock chamber B2 can be depressurized, the substrate can be transferred from cluster C2, and then the load-lock chamber B2 can be set to an inert gas atmosphere before the substrate is transferred to cluster C3.

[0086] The transport devices 70a, 70b, and 70c each have a mechanism for transporting a substrate placed on a hand unit. Since the transport devices 70b and 70c are operated under normal pressure, the hand unit may be provided with a vacuum suction mechanism or the like. The transport device 71a has a mechanism for fixing the substrate to the hand unit and transporting it. Since the transport device 71a is operated under reduced pressure, an electrostatic suction mechanism or the like can be used as a fixing method.

[0087] As described above, since the transfer devices 70a, 70b, and 70c have different configurations from the transfer device 71a, the load lock chambers B1 and B2 are provided with stages 80a and 80b that can place a substrate on pins. The load lock chambers B3 and B4 are provided with stages 81a and 81b that can place a substrate on a surface. Note that these are merely examples, and stages with other configurations may also be used. The transfer of substrates in the load lock chamber B1 will be described in detail below.

[0088] <Cluster C5 to Cluster C8> 5 is a top view illustrating clusters C5 to C8. Cluster C5 is connected to cluster C6 via load lock chamber B5. Cluster C6 is connected to cluster C7 via load lock chamber B6. Cluster C7 is connected to cluster C8 via load lock chamber B7. Cluster C8 is connected to cluster C9 (see FIG. 6) via load lock chamber B8.

[0089] The basic configurations of clusters C5 to C8 are similar to those of clusters C1 to C4, with cluster C5 corresponding to cluster C1, cluster C6 corresponding to cluster C2, cluster C7 corresponding to cluster C3, and cluster C8 corresponding to cluster C4. Note that the load chamber LD in cluster C1 is replaced with a load lock chamber B4 in cluster C5.

[0090] Furthermore, load lock chamber B5 corresponds to load lock chamber B1, load lock chamber B6 corresponds to load lock chamber B2, load lock chamber B7 corresponds to load lock chamber B3, and load lock chamber B8 corresponds to load lock chamber B4.

[0091] For details of the clusters and load lock chambers, which will be described below only in terms of their configuration, please refer to the descriptions of clusters C1 to C4 and load lock chambers B1 to B4.

[0092] Cluster C5 and cluster C7 each have atmospheric pressure process equipment A. Cluster C5 has transfer chamber TF5 and atmospheric pressure process equipment A (atmospheric pressure process equipment A8, A9) that mainly performs processes under atmospheric pressure. Cluster C7 has transfer chamber TF7 and atmospheric pressure process equipment A (atmospheric pressure process equipment A10 to A14).

[0093] Cluster C6 and cluster C8 each have a vacuum process apparatus V. Cluster C6 has a transfer chamber TF6 and a vacuum process apparatus V (vacuum process apparatuses V11 to V15). Cluster C8 has a transfer chamber TF8 and a vacuum process apparatus V (vacuum process apparatuses V16 to V20).

[0094] Transfer chamber TF5 is connected to load lock chamber B4 via a gate valve. It is also connected to load lock chamber B5 via another gate valve. Transfer chamber TF5 is provided with a transfer device 70d. Transfer device 70d can transfer substrates from load lock chamber B4 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B5.

[0095] Transfer chamber TF6 is connected to load lock chamber B5 via a gate valve, and also to load lock chamber B6 via another gate valve. Transfer chamber TF6 is provided with transfer device 71b. Transfer device 71b can transfer a substrate placed in load lock chamber B5 upside down to the vacuum process device V. It can also transfer a substrate removed from vacuum process device V upside down to the load lock chamber B6.

[0096] Transfer chamber TF7 is also connected to load lock chamber B6 via a gate valve. It is also connected to load lock chamber B7 via another gate valve. Transfer chamber TF7 is provided with a transfer device 70e. Transfer device 70e can transfer substrates from load lock chamber B6 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B7.

[0097] Transfer chamber TF8 is connected to load lock chamber B7 via a gate valve, and also to load lock chamber B8 via another gate valve. Transfer chamber TF8 is provided with a transfer device 70f. Transfer device 70f can transfer substrates from load lock chamber B7 to vacuum process equipment V. It can also unload substrates removed from vacuum process equipment V into load lock chamber B8.

[0098] Load lock chambers B5 and B6 are provided with stages 80c and 80d on which substrates can be placed on pins, while load lock chambers B7 and B8 are provided with stages 81c and 81d on which substrates can be placed.

[0099] <Cluster C9 to Cluster C12> 6 is a top view illustrating clusters C9 to C12. Cluster C9 is connected to cluster C10 via load lock chamber B9. Cluster C10 is connected to cluster C11 via load lock chamber B10. Cluster C11 is connected to cluster C12 via load lock chamber B11. Cluster C12 is connected to cluster C13 (see FIG. 7) via load lock chamber B12.

[0100] The basic configurations of clusters C9 to C12 are similar to those of clusters C1 to C4, with cluster C9 corresponding to cluster C1, cluster C10 corresponding to cluster C2, cluster C11 corresponding to cluster C3, and cluster C12 corresponding to cluster C4. Note that the load chamber LD in cluster C1 is replaced with a load lock chamber B8 in cluster C5. Also, the vacuum process device V10 in cluster C4 is omitted in cluster C12.

[0101] Furthermore, load lock chamber B9 corresponds to load lock chamber B1, load lock chamber B10 corresponds to load lock chamber B2, load lock chamber B11 corresponds to load lock chamber B3, and load lock chamber B12 corresponds to load lock chamber B4.

[0102] Only the configuration will be described below, and for details of the clusters and load lock chambers, please refer to the descriptions of clusters C1 to C4 and load lock chambers B1 to B4.

[0103] Cluster C9 and cluster C11 each have atmospheric pressure process equipment A. Cluster C9 has transfer chamber TF9 and atmospheric pressure process equipment A (atmospheric pressure process equipment A15, A16) that mainly performs processes under atmospheric pressure. Cluster C11 has transfer chamber TF11 and atmospheric pressure process equipment A (atmospheric pressure process equipment A17 to A21).

[0104] Transfer chamber TF9 is connected to load lock chamber B8 via a gate valve. It is also connected to load lock chamber B9 via another gate valve. A transfer device 70g is provided in transfer chamber TF9. The transfer device 70g can transfer substrates from load lock chamber B8 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B9.

[0105] Transfer chamber TF11 is also connected to load lock chamber B10 via a gate valve. It is also connected to load lock chamber B11 via another gate valve. Transfer chamber TF11 is provided with a transfer device 70h. Transfer device 70h can transfer substrates from load lock chamber B10 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B11.

[0106] Cluster C10 and cluster C12 each have a vacuum process apparatus V. Cluster C10 has a transfer chamber TF10 and vacuum process apparatus V (vacuum process apparatuses V21 to V25). Cluster C12 has a transfer chamber TF12 and vacuum process apparatus V (vacuum process apparatuses V26 to V29).

[0107] Transfer chamber TF10 is connected to load lock chamber B9 via a gate valve, and also to load lock chamber B10 via another gate valve. Transfer chamber TF10 is provided with a transfer device 71c. Transfer device 71c can transfer a substrate placed in load lock chamber B9 upside down to the vacuum process device V. It can also transfer a substrate removed from vacuum process device V upside down to the load lock chamber B10.

[0108] The transfer chamber TF12 is connected to the load lock chamber B11 via a gate valve. It is also connected to the load lock chamber B12 via another gate valve. A transfer device 70i is provided in the transfer chamber TF12. The transfer device 70i can transfer a substrate from the load lock chamber B11 to the vacuum process device V and then unload it into the load lock chamber B12.

[0109] Load lock chambers B9 and B10 are provided with stages 80e and 80f on which a substrate can be placed on pins, while load lock chambers B11 and B12 are provided with stages 81e and 81f on which a substrate can be placed.

[0110] <Cluster C13 to C16> 7 is a top view illustrating clusters C13 to C16. Cluster C13 is connected to cluster C14 via load lock chamber B13. Cluster C14 is connected to cluster C15 via load lock chamber B14. Cluster C15 is connected to cluster C16 via load lock chamber B15. Cluster C16 is connected to cluster C17 (see FIG. 8) via load lock chamber B16.

[0111] Cluster C13 and cluster C15 each have atmospheric pressure process equipment A. Cluster C13 has transfer chamber TF13 and atmospheric pressure process equipment A (atmospheric pressure process equipment A22 to A26) that mainly perform processes under atmospheric pressure. Cluster C15 has transfer chamber TF15 and atmospheric pressure process equipment A (atmospheric pressure process equipment A27 to A31) that mainly perform processes under atmospheric pressure.

[0112] The atmospheric pressure process device A of the cluster C13 can be an apparatus for performing a lithography process similar to that of the cluster C3. In the apparatus for performing a lithography process, a resin filling process can be performed.

[0113] Transfer chamber TF13 is connected to load lock chamber B12 via a gate valve. It is also connected to load lock chamber B13 via another gate valve. A transfer device 70j is provided in transfer chamber TF13. The transfer device 70j can transfer substrates from load lock chamber B12 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B13.

[0114] The basic configuration of cluster C15 is the same as that of cluster C2. Transfer chamber TF15 is connected to load lock chamber B14 via a gate valve. It is also connected to load lock chamber B15 via another gate valve. A transfer device 70m is provided in transfer chamber TF15. The transfer device 70m can transfer substrates from load lock chamber B14 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B15.

[0115] Cluster C14 and cluster C16 each have a vacuum process apparatus V. Cluster C14 has a transfer chamber TF14 and a vacuum process apparatus V (vacuum process apparatus V30 and V31). Cluster C16 has a transfer chamber TF16 and a vacuum process apparatus V (vacuum process apparatus V32).

[0116] As the vacuum process equipment V of the cluster C14, for example, an ashing equipment, a dry etching equipment (having an ashing function), an ALD equipment, a CVD equipment, a sputtering equipment, etc. can be applied.

[0117] Transfer chamber TF14 is connected to load lock chamber B13 via a gate valve. It is also connected to load lock chamber B14 via another gate valve. A transfer device 70k is provided in transfer chamber TF14. Transfer device 70k can transfer substrates from load lock chamber B13 to vacuum process equipment V. It can also transfer substrates removed from vacuum process equipment V to load lock chamber B14.

[0118] As the vacuum process equipment V of the cluster C16, for example, a dry etching equipment can be applied.

[0119] Transfer chamber TF16 is connected to load lock chamber B15 via a gate valve. It is also connected to load lock chamber B16 via another gate valve. A transfer device 70n is provided in transfer chamber TF16. The transfer device 70n can transfer substrates from load lock chamber B15 to vacuum process equipment V. It can also transfer substrates removed from vacuum process equipment V to load lock chamber B16.

[0120] Load-lock chambers B13 to B16 are provided with stages 81g, 81h, 81i, and 81j on which substrates can be placed. Load-lock chambers B13 to B16 are also provided with a vacuum pump VP and a valve for introducing inert gas. Therefore, the load-lock chamber B13 can be controlled to a reduced pressure or inert gas atmosphere.

[0121] <Cluster C17, C18> 7 is a top view illustrating clusters C17 and C18. Cluster C17 is connected to cluster C18 via load lock chamber B17.

[0122] Cluster C17 has atmospheric pressure process equipment A. Cluster C17 has transfer chamber TF17 and atmospheric pressure process equipment A (atmospheric pressure process equipment A32 and A33) that mainly performs processes under atmospheric pressure.

[0123] An etching device and a baking device can be applied as the atmospheric pressure process equipment A of cluster C17. A wet etching device can be applied as the etching device. A dry etching device can also be applied, but in that case, the processing can be performed in cluster C16, so cluster C17 can be omitted. When using a dry etching device, it is preferable to lower the bias to the substrate side or to eliminate the bias to the substrate side so that isotropic etching processing is possible.

[0124] Transfer chamber TF17 is connected to load lock chamber B16 via a gate valve. It is also connected to load lock chamber B17 via another gate valve. A transfer device 70p is provided in transfer chamber TF17. The transfer device 70p can transfer substrates from load lock chamber B16 to atmospheric pressure process equipment A. It can also transfer substrates taken out from atmospheric pressure process equipment A to load lock chamber B17.

[0125] Cluster C18 includes vacuum process equipment V. Cluster C18 includes transfer chamber TF18 and vacuum process equipment V (vacuum process equipment V33 to V35) that mainly performs processes under reduced pressure.

[0126] As the vacuum process equipment V of the cluster C18, for example, a deposition equipment such as a vapor deposition equipment, a sputtering equipment, a CVD equipment, an ALD equipment, and an opposing substrate bonding equipment can be applied.

[0127] The transfer chamber TF18 is connected to the load lock chamber B17 via a gate valve, and also to the unload chamber ULD via another gate valve. A transfer device 71d is provided in the transfer chamber TF18. The transfer device 71d can transfer a substrate from the load lock chamber B17 to the vacuum process device V. The transfer device 71d can also transfer the substrate removed from the vacuum process device V to the unload chamber ULD.

[0128] The load-lock chamber B17 is equipped with a stage 80g on which a substrate can be placed on pins. The load-lock chamber B17 is also equipped with a vacuum pump VP and a valve for introducing inert gas. Therefore, the load-lock chamber B17 can be controlled to a reduced pressure or inert gas atmosphere.

[0129] By using the manufacturing apparatus configured as described above, a highly reliable light emitting device sealed with a protective film can be formed.

[0130] For example, successive steps can be performed in an atmosphere-controlled apparatus, including forming light-emitting devices that emit light of a first color in clusters C1 to C4, forming light-emitting devices that emit light of a second color in clusters C5 to C8, forming light-emitting devices that emit light of a third color in clusters C9 to C12, filling an insulating layer in cluster C13, removing unnecessary elements in clusters C14 to C17, and forming a protective film or the like in cluster C18. Details of these steps will be described later.

[0131] In addition, when forming a light-emitting device that emits white light and forming light-emitting devices that emit light of first to third colors using colored layers such as color filters, the clusters C1, C2, C3, C4, C13, C14, C15, C16, C17, and C18 can be connected in order.

[0132] <Configuration example 2> Fig. 9 is a block diagram illustrating a light-emitting device manufacturing apparatus different from that shown in Fig. 3. The manufacturing apparatus shown in Fig. 9 is an example having clusters C1, C2, C3, C4, C6, C7, C8, C10, C11, C12, C13, C14, C15, C16, C17, and C18, and is configured by omitting clusters C5 and C9 from the manufacturing apparatus shown in Fig. 3. Clusters C1, C2, C3, C4, C6, C7, C8, C10, C11, C12, C13, C14, C15, C16, C17, and C18 are connected in order, and substrate 60a inserted into cluster C1 can be removed from cluster C14 as substrate 60b on which a light-emitting device is formed.

[0133] In the manufacturing equipment shown in FIG. 3, clusters C5 and C9 have a cleaning device and a baking device. The process before the cleaning process is an etching (dry etching) process. If residual gas components, residues, deposits, etc. from this process do not adversely affect subsequent processes, the cleaning process can be omitted. Furthermore, if the cleaning process is omitted, there is no need to consider residual moisture on the substrate, and therefore the baking process can also be omitted. Therefore, in some cases, the configuration of FIG. 9 may be used, in which clusters C5 and C9 are omitted from the manufacturing equipment shown in FIG. 3. By omitting clusters C5 and C9, the total number of clusters and the number of load lock chambers can be reduced.

[0134] <Cluster C1 to Cluster C4> The configuration of clusters C1 to C4 can be the same as that shown in Fig. 4. However, the load lock chamber B4 is connected to cluster C6.

[0135] <Cluster C6, C7, C8, C10> 10 is a top view illustrating clusters C6, C7, C8, and C10. Cluster C6 is connected to cluster C7 via load lock chamber B6. Cluster C7 is connected to cluster C8 via load lock chamber B7. Cluster C8 is connected to cluster C10 via load lock chamber B9. Cluster C10 is connected to cluster C11 (see FIG. 11) via load lock chamber B10.

[0136] The following describes the configuration of the connections between the clusters. For details of the clusters and the load lock chambers, please refer to the descriptions of the clusters C6, C7, C8, and C10 and the load lock chambers B4, B7, B9, and B10.

[0137] Transfer chamber TF6 of cluster C6 is connected to load lock chamber B4 via a gate valve. It is also connected to load lock chamber B6 via another gate valve. Transfer chamber TF6 is provided with a transfer device 71b. Transfer device 71b can transfer a substrate placed in load lock chamber B4 upside down to the vacuum process device V. It can also transfer a substrate removed from vacuum process device V upside down to the load lock chamber B6.

[0138] Transfer chamber TF7 of cluster C7 is connected to load lock chamber B6 via a gate valve. It is also connected to load lock chamber B7 via another gate valve. Transfer chamber TF7 is provided with a transfer device 70e. Transfer device 70e can transfer substrates from load lock chamber B6 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B7.

[0139] Transfer chamber TF8 of cluster C8 is connected to load lock chamber B7 via a gate valve. It is also connected to load lock chamber B9 via another gate valve. Transfer chamber TF8 is provided with a transfer device 70f. Transfer device 70f can transfer substrates from load lock chamber B7 to vacuum process equipment V. It can also transfer substrates removed from vacuum process equipment V to load lock chamber B9.

[0140] Transfer chamber TF10 of cluster C10 is connected to load lock chamber B9 via a gate valve. It is also connected to load lock chamber B10 via another gate valve. Transfer chamber TF10 is provided with a transfer device 71c. Transfer device 71c can transfer a substrate placed in load lock chamber B9 upside down to the vacuum process device V. It can also transfer a substrate removed from vacuum process device V upside down to the load lock chamber B10.

[0141] <Clusters C11, C12, C13, C14> 11 is a top view illustrating clusters C11, C12, C13, and C14. Cluster C11 is connected to cluster C12 via load lock chamber B11. Cluster C12 is connected to cluster C13 via load lock chamber B12. Cluster C13 is connected to cluster C14 via load lock chamber B13.

[0142] The following describes the configuration of connections between clusters. For details of the clusters and load lock chambers, please refer to the descriptions of the clusters C11, C12, C13, and C14 and the load lock chambers B11, B12, and B13.

[0143] The transfer chamber TF11 of the cluster C11 is connected to the load lock chamber B10 via a gate valve. It is also connected to the load lock chamber B11 via another gate valve. A transfer device 70h is provided in the transfer chamber TF6. The transfer device 70h can transfer a substrate from the load lock chamber B10 to the atmospheric pressure process equipment A. It can also transfer a substrate taken out of the atmospheric pressure process equipment A to the load lock chamber B11.

[0144] The transfer chamber TF12 of the cluster C12 is connected to the load lock chamber B11 via a gate valve. It is also connected to the load lock chamber B12 via another gate valve. A transfer device 70i is provided in the transfer chamber TF12. The transfer device 70i can transfer a substrate from the load lock chamber B11 to the vacuum process device V. It can also transfer a substrate taken out of the vacuum process device V to the load lock chamber B12.

[0145] The transfer chamber TF13 of the cluster C13 is connected to the load lock chamber B12 via a gate valve. It is also connected to the load lock chamber B13 via another gate valve. A transfer device 70j is provided in the transfer chamber TF13. The transfer device 70j can transfer a substrate from the load lock chamber B12 to the atmospheric pressure process equipment A. It can also transfer a substrate taken out of the atmospheric pressure process equipment A to the load lock chamber B13.

[0146] The transfer chamber TF14 of the cluster C14 is connected to the load lock chamber B13 via a gate valve. It is also connected to the unload chamber ULD via another gate valve. A transfer device 70k is provided in the transfer chamber TF13. The transfer device 70k can transfer a substrate from the load lock chamber B13 to the vacuum process device V. It can also transfer a substrate taken out of the vacuum process device V to the load lock chamber B14.

[0147] <Cluster C15 to Cluster C18> The configuration of clusters C15 to C18 can be the same as the configuration shown in FIGS.

[0148] <Substrate transport operation> Next, the operation of transporting a substrate from cluster C1 to cluster C2 will be described with reference to the drawings. Note that the substrate transport operation between another cluster having a similar configuration to cluster C1 and another cluster having a similar configuration to cluster C2 can be similar to the following description.

[0149] 12A is a diagram showing the transfer device 70a of cluster C1, the stage 80a of load lock chamber B1, and the transfer device 71a of cluster C2. For clarity, the chamber walls, gate valves, etc. are omitted from the illustration.

[0150] The transfer device 70a has a lifting mechanism 91, an arm 92, and a hand unit 93. The hand unit 93 has a flat surface with a notch, on which a substrate can be placed. Since the cluster C1 is a cluster that includes the atmospheric pressure process device A, the hand unit 93 may be provided with a vacuum suction mechanism or the like. Alternatively, an electrostatic suction mechanism may be provided.

[0151] The transfer device 71a has an elevating mechanism 94, an arm 95, and a substrate fixing part 96. The substrate fixing part 96 has a flat surface for holding the substrate 60, and is sized smaller than the width of the notch of the hand part 93 of the transfer device 70a. Because the cluster C1 is a cluster that includes the vacuum process device V, it is preferable to provide the substrate fixing part 96 with an electrostatic adsorption mechanism. The transfer device 71a also has a substrate inversion mechanism, which will be described later.

[0152] The stage 80a has pins 82 on which the substrate 60 is placed. A first length connecting the two pins 82 (length not including the diameter of the pins 82) is set to be larger than the width of the substrate fixing portion 96. A second length connecting the two pins 82 (length including the diameter of the pins 82) is set to be smaller than the width of the notch of the hand unit 93. Note that a configuration without pins is also possible as long as the substrate 60 is stably fixed and does not interfere with the substrate fixing portion 96 on the back side of the substrate 60. Note that a lifting mechanism may be provided on the stage 80a.

[0153] First, the substrate 60 held by the hand portion 93 of the transport device 70a is transported to the stage 80a (see FIG. 12B), and is then lowered by the lifting mechanism 91, so that the substrate 60 is placed on the pins 82 (see FIG. 12C).

[0154] Next, the substrate fixing portion 96 of the transport device 71a is inserted between the pins 82 of the stage 80a with the substrate fixing portion 96 facing upward, and the arm 95 is raised to fix the rear surface of the substrate 60 to the substrate fixing portion 96 (see FIG. 13A).

[0155] Next, the arm 95 is further raised, and the substrate 60 is carried into the cluster C1 through the extension / contraction and rotation of the arm 95 (see FIG. 13B).

[0156] Then, the substrate 60 is turned upside down while being fixed to the substrate fixing part 96 by a rotation mechanism 97 provided between the substrate fixing part 96 and the arm 95 (see FIG. 13C). The upside-down substrate 60 can be carried into a film forming apparatus or the like where a substrate is placed face down.

[0157] <Configuration example 3> In the configuration examples 1 and 2, examples of an inline type manufacturing apparatus in which each cluster is connected via a load lock chamber are shown, but each cluster may have its own independent load chamber LD and unload chamber ULD.

[0158] In such a configuration, the workpiece is sealed in a container with a controlled atmosphere so as not to be exposed to the atmosphere, and the container is moved between clusters.

[0159] 14 shows an example in which clusters C1, C2, C3, and C4 are independent, and each cluster is provided with a load chamber LD and an unload chamber ULD. The workpieces are stored in cassettes CT, which are then placed in atmosphere-controlled transport containers BX and moved between clusters.

[0160] 15A is a diagram for explaining the unloading of the cassette CT in the cluster C2. For clarity, the gate valve is omitted and the diagram is a see-through view of the chamber wall of the unload chamber ULD.

[0161] First, with all workpieces stored in cassettes CT installed in the unload chamber ULD, the atmosphere in the unload chamber ULD is replaced with an inert gas atmosphere. The interior of the transfer container BX installed on the transfer vehicle VE is also replaced with an inert gas atmosphere. At this time, it is preferable to maintain a positive pressure state in the unload chamber ULD and the transfer container BX to prevent atmospheric air from flowing in. Note that the transfer container BX may be configured to prevent atmospheric air from flowing in, and may be evacuated to a negative pressure state.

[0162] Next, the unloading port of the unloading chamber ULD is docked with the loading / unloading entrance of the transfer container BX, and the cassette CT is transferred from the unloading chamber ULD to the transfer container BX by the transfer device 200. Then, the loading / unloading entrance of the transfer container BX is closed to maintain the inside of the transfer container BX in an inert gas atmosphere, and the transfer container BX is moved to cluster C2 by the transfer vehicle VE.

[0163] 15B is a diagram for explaining the loading of the cassette CT into the cluster C3, in which the wall of the transfer container BX is shown as a see-through view for clarity.

[0164] First, the atmosphere in the load chamber LD is replaced with an inert gas atmosphere. Next, the loading entrance of the load chamber LD is docked with the loading entrance of the transfer container BX, and the transfer device 209 transfers the cassette CT from the transfer container BX to the load chamber LD. Then, the loading entrance of the load chamber UL is closed, and processing in cluster C2 begins.

[0165] 15C is a diagram illustrating the transfer container BX and the transfer vehicle VE. The transfer vehicle VE has therein a controller 201, a power source 202, a battery 203, a gas cylinder 205 filled with an inert gas, and the like. The power source 202 is connected to the battery 203 and wheels 204. The transfer vehicle VE can be moved manually or automatically under the control of the controller 201.

[0166] The transfer container BX has a gas inlet 210 and an outlet 211, and the inlet 210 is connected to a gas cylinder 205 via a valve 206. The outlet 211 is connected to a valve 207. One or both of the valves 206 and 207 are conductance valves, and can control the inside of the transfer container BX to a positive pressure with an inert gas. As the inert gas, nitrogen, argon, or the like is preferably used.

[0167] The transfer container BX also has a loading / unloading entrance 208 and a transfer device 209. The type of the loading / unloading entrance 208 is not limited, and for example, a door type, a shutter type, or the like can be used.

[0168] The transfer device 209 can transfer the cassette CT. In the explanation of Figures 15A and 15B, the transfer device 200 of the unload chamber ULD is used for unloading to the transfer container BX, and the transfer device 209 of the transfer container BX is used for loading into the load chamber LD, but either the transfer device 200 or the transfer device 209 may be used to perform these operations. Also, a configuration may be adopted in which one of the transfer device 200 and the transfer device 209 is not provided.

[0169] Although clusters C1 to C4 have been exemplified above, the configuration in which each cluster is independent can also be applied to clusters C5 to C18. Configuration Example 3 can also be combined with part of Configuration Example 1 or Configuration Example 2.

[0170] 16A is a diagram illustrating a vacuum process apparatus V in which a substrate is placed face down, and illustrates a film forming apparatus 30. For clarity, the diagram is a see-through view of the chamber wall, and the gate valve is omitted.

[0171] The film forming apparatus 30 has a film forming material supply unit 31, a mask jig 32, and a substrate alignment unit 33. If the film forming apparatus 30 is an evaporation apparatus, the film forming material supply unit 31 is a location where an evaporation source is installed. If the film forming apparatus 30 is a sputtering apparatus, the film forming material supply unit 31 is a location where a target (cathode) is installed.

[0172] 16B, the substrate 60 can be carried in upside down into the substrate alignment section 33. A mask jig 32 is installed below the substrate alignment section 33. Circuits and the like are provided in advance on the surface of the substrate 60, and the substrate 60 and the mask jig 32 are brought into close contact with each other to prevent film deposition in unnecessary areas. At this time, the substrate alignment section 33 adjusts the positions of the portions of the substrate 60 that require film deposition and the openings 35 of the mask jig 32.

[0173] Since a structure such as a light-emitting device is formed in the opening 35, the size of the opening 35 may be adjusted depending on the purpose. For example, the size of the opening 35 can be determined depending on the size of the exposure region described below.

[0174] 17A to 17C show an example of the number of display devices that can be produced per substrate (e.g., a silicon wafer) with a diameter Φ of 12 inches. In FIGS. 17A to 17C, estimates are made assuming that external connection terminals are taken out from the backside using through-electrodes. This allows the display area to be made larger. Pads may also be provided within the exposure area. In this case, although the display area becomes smaller, it has the effect of reducing the manufacturing cost related to the configuration for taking out the external connection terminals.

[0175] 17A to 17C each show an example in which the aspect ratio of the display area is 4:3.

[0176] FIG. 17A shows an example in which a sealing region is provided inside the exposure region (32 mm × 24 mm) of an exposure device. In the example of FIG. 17A, the width of the sealing region is 1.5 mm in the vertical direction and 2.0 mm in the horizontal direction. In this case, the size of the display region is 28 mm × 21 mm (aspect ratio 4:3), with a diagonal size of approximately 1.38 inches. The number of display devices that can be obtained per substrate is 72. If the width of the sealing region is 2.0 mm in the vertical direction and 2.65 mm in the horizontal direction, the size of the display region is 26.7 mm × 20 mm (aspect ratio 4:3), with a diagonal size of approximately 1.32 inches. If the width of the sealing region is 3.0 mm in the vertical direction and 4.0 mm in the horizontal direction, the size of the display region is 24 mm × 18 mm (aspect ratio 4:3), with a diagonal size of approximately 1.18 inches. In both cases, the number of display devices per substrate is 72.

[0177] Figures 17B and 17C show examples in which a sealing area is provided outside the exposure area (32 mm x 24 mm) of the exposure device. In this case, a gap is left for the sealing area during exposure. A marker area is provided inside the exposure area. Figure 17B shows an example in which the width of the marker area is 0.5 mm in the vertical direction and 0.7 mm in the horizontal direction, and the width of the sealing area is 2.0 mm. In this case, the size of the display area of ​​the display device is approximately 1.51 inches diagonally. The number of display devices that can be produced per substrate is 56. If the width of the marker area is 1.0 mm in the vertical direction and 1.3 mm in the horizontal direction, the size of the display area is approximately 1.45 inches diagonally. Figure 17C shows an example in which the width of the marker area is 0.5 mm in the vertical direction and 0.7 mm in the horizontal direction, and the width of the sealing area is 3.0 mm. In this case, the size of the display area of ​​the display device is approximately 1.51 inches diagonally, which is the same as the configuration in Figure 17B. The number of display devices that can be taken per substrate is 49, which is approximately 13% lower than the configuration in Figure 17B.

[0178] 18A to 18F show examples of the configuration of a film formation apparatus that can be applied to the vacuum process apparatus V. FIG. 18A is a vacuum evaporation apparatus that has a substrate holder 51 for placing a substrate 60, an evaporation source 52 such as a crucible, and a shutter 53. An exhaust port 54 is connected to a vacuum pump. The evaporation source is heated under reduced pressure to evaporate or sublimate the film formation material, and the shutter is opened to form a film.

[0179] 18B shows a sputtering apparatus, which has an upper electrode 58 on which a substrate 60 is placed, a lower electrode 56 on which a target 57 is placed, and a shutter 53. The gas inlet 55 is connected to a sputtering gas supply source, and the exhaust port 54 is connected to a vacuum pump. For example, a sputtering phenomenon occurs when DC power or RF power is applied between the upper electrode 58 and the lower electrode 56 under reduced pressure including a noble gas, and a film of the material of the target 57 can be formed on the surface of the substrate 60 by opening the shutter.

[0180] 18C shows a plasma CVD apparatus having an upper electrode 58 having a gas inlet 55 and a shower plate 59, and a lower electrode 56 on which a substrate 60 is placed. The gas inlet 55 is connected to a source of raw material gas, and the exhaust port 54 is connected to a vacuum pump. The raw material gas is introduced under reduced pressure, and high-frequency power or the like is applied between the upper electrode 58 and the lower electrode 56 to decompose the raw material gas, thereby forming a film of the desired material on the surface of the substrate 60.

[0181] 18D shows a dry etching apparatus having an upper electrode 58 and a lower electrode on which a substrate 60 is placed. The gas inlet 55 is connected to an etching gas supply source, and the exhaust port 54 is connected to a vacuum pump. The etching gas is introduced under reduced pressure, and high-frequency power or the like is applied between the upper electrode 58 and the lower electrode 56 to activate the etching gas, thereby etching an inorganic film or organic film formed on the substrate 60. Ashing apparatuses and plasma processing apparatuses can also be configured in a similar manner.

[0182] 18E shows a waiting chamber having a substrate holder 62 for storing a plurality of substrates 60. The exhaust port 54 is connected to a vacuum pump, and the substrates 60 wait under reduced pressure. The number of substrates 60 that can be stored in the substrate holder 62 may be determined appropriately taking into consideration the process times before and after.

[0183] FIG. 18F shows an ALD apparatus, here configured as a batch type. The ALD apparatus has a heater 61, a gas inlet 55 connected to a source of precursors and the like, and an exhaust port 54 connected to a vacuum pump. A substrate holder 63 holds multiple substrates 60 and is placed on the heater 61. By alternately introducing precursors or oxidizing agents through the gas inlet 55 under reduced pressure, films are repeatedly formed on the substrates 60 in atomic layer units. In the case of a single-wafer type, a configuration without using the substrate holder 62 is sufficient. A thermal CVD apparatus can also be configured in a similar manner.

[0184] FIG. 18G shows a batch-type ALD apparatus with a different configuration from that shown in FIG. 18F. The basic configuration is similar, but the difference is that substrates 60 are arranged side by side on a heater 61, and a substrate holder 62 is not used. Alternatively, a gas inlet 55 may be provided directly above the substrate 60, and a rotation mechanism or the like may be provided on the heater 61 so that the substrate 60 passes directly below the gas inlet 55. The substrate 60 is rotated by the rotation mechanism of the heater 61, allowing multiple substrates to be processed.

[0185] This embodiment mode can be implemented in appropriate combination with any of the structures described in the other embodiment modes.

[0186] (Embodiment 2) In this embodiment, a specific example of an organic EL element that can be manufactured using the manufacturing apparatus for a light-emitting device according to one embodiment of the present invention will be described.

[0187] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. In addition, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0188] In this specification, a structure in which different light-emitting layers are formed or different light-emitting layers are painted for each color light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. In this specification, a light-emitting device that can emit white light may be referred to as a white light-emitting device. A white light-emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.

[0189] Light-emitting devices can be broadly divided into single-structure and tandem-structure devices. A single-structure device has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, two or more light-emitting layers may be selected so that the emission colors of the respective light-emitting layers are complementary to each other. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary to each other, a configuration in which the entire light-emitting device emits white light can be obtained. The same applies to light-emitting devices having three or more light-emitting layers.

[0190] A tandem-structured device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light, light from the light-emitting layers of the multiple light-emitting units may be combined to obtain white light. The configuration for obtaining white light is the same as that of the single-structured device. In a tandem-structured device, it is preferable to provide an intermediate layer such as a charge-generating layer between the multiple light-emitting units.

[0191] Furthermore, when comparing the above-mentioned white light-emitting device (single structure or tandem structure) with a light-emitting device with an SBS structure, the light-emitting device with an SBS structure can consume less power than the white light-emitting device. If you want to keep power consumption low, it is preferable to use a light-emitting device with an SBS structure. On the other hand, the manufacturing process of a white light-emitting device is simpler than that of a light-emitting device with an SBS structure, so it is preferable because it can reduce manufacturing costs or increase manufacturing yields.

[0192] Tandem-structure devices may also have a configuration (BB, GG, RR, etc.) in which light is emitted from multiple layers. A tandem structure, which allows light emission from multiple layers, requires a high voltage to emit light, but the current required to achieve the same emission intensity as a single structure is smaller. Therefore, a tandem structure can reduce the current stress per light-emitting unit and extend the device life.

[0193] <Configuration example> 19 is a schematic top view of a display device 100 manufactured using a light-emitting device manufacturing apparatus according to one embodiment of the present invention. The display device 100 includes a plurality of red light-emitting devices 110R, a plurality of green light-emitting devices 110G, and a plurality of blue light-emitting devices 110B. In FIG. 19, the light-emitting regions of the light-emitting devices are labeled with R, G, and B to easily distinguish the light-emitting devices from one another.

[0194] The light-emitting devices 110R, 110G, and 110B are arranged in a matrix. Fig. 19 shows a so-called stripe arrangement in which light-emitting devices of the same color are arranged in one direction. Note that the arrangement of the light-emitting devices is not limited to this, and other arrangements such as a delta arrangement or a zigzag arrangement may also be used, or a pentile arrangement or other arrangement may also be used.

[0195] It is preferable to use EL elements such as OLEDs (organic light emitting diodes) or QLEDs (quantum-dot light emitting diodes) as light emitting devices 110R, 110G, and 110B. Examples of light emitting materials that EL elements have include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (TADF) materials.

[0196] FIG. 20A is a schematic cross-sectional view corresponding to the dashed dotted line A1-A2 in FIG.

[0197] 20A shows cross sections of light emitting device 110R, light emitting device 110G, and light emitting device 110B. Light emitting device 110R, light emitting device 110G, and light emitting device 110B are each provided on a pixel circuit and have pixel electrode 111 and common electrode 113.

[0198] The light-emitting device 110R has an EL layer 112R between the pixel electrode 111 and the common electrode 113. The EL layer 112R contains a light-emitting organic compound that emits light having a peak in at least the red wavelength range. The EL layer 112G of the light-emitting device 110G contains a light-emitting organic compound that emits light having a peak in at least the green wavelength range. The EL layer 112B of the light-emitting device 110B contains a light-emitting organic compound that emits light having a peak in at least the blue wavelength range. Note that a structure in which the EL layer 112R, the EL layer 112G, and the EL layer 112B each emit light of a different color may be referred to as an SBS (Side By Side) structure.

[0199] EL layer 112R, EL layer 112G, and EL layer 112B may each have one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer in addition to a layer containing a light-emitting organic compound (light-emitting layer).

[0200] The pixel electrode 111 is provided for each light-emitting device. The common electrode 113 is provided as a continuous layer common to each light-emitting device. A conductive film that is transparent to visible light is used for either the pixel electrode 111 or the common electrode 113, and a conductive film that is reflective to visible light is used for the other. By making the pixel electrode 111 transparent and the common electrode 113 reflective, a bottom-emission display device can be obtained. Conversely, by making the pixel electrode 111 reflective and the common electrode 113 transparent, a top-emission display device can be obtained. Note that by making both the pixel electrode 111 and the common electrode 113 transparent, a dual-emission display device can also be obtained. In this embodiment, an example of manufacturing a top-emission display device will be described.

[0201] The EL layer 112R, the EL layer 112G, and the EL layer 112B each have a region in contact with the upper surface of the pixel electrode 111.

[0202] As shown in Figure 20A, a gap is provided between two EL layers between light-emitting devices of different colors. In this way, it is preferable that EL layer 112R, EL layer 112G, and EL layer 112B are arranged so that they do not contact each other. This effectively prevents current from flowing through two adjacent EL layers, which would otherwise cause unintended light emission. This improves contrast and allows for the realization of a display device with high display quality.

[0203] Furthermore, a protective layer 121 is provided on the common electrode 113 to cover the light-emitting devices 110R, 110G, and 110B. The protective layer 121 has a function of preventing impurities from diffusing into each light-emitting device from above. Alternatively, the protective layer 121 has a function of capturing (also called gettering) impurities (typically, impurities such as water and hydrogen) that may enter each light-emitting device.

[0204] The protective layer 121 may have, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film. Alternatively, the protective layer 121 may be made of a semiconductor material such as indium gallium oxide or indium gallium zinc oxide.

[0205] The pixel electrode 111 is electrically connected to one of the source and drain of the transistor 116. The transistor 116 can be, for example, a transistor having a metal oxide in a channel formation region (hereinafter referred to as an OS transistor). The OS transistor has higher mobility and superior electrical characteristics than amorphous silicon transistors. Furthermore, the OS transistor does not require the crystallization process that is required in the manufacturing process of polycrystalline silicon, and can be formed through a wiring process or the like. Therefore, the OS transistor can be formed on a transistor 115 having silicon in a channel formation region formed on a substrate 60 (hereinafter referred to as a Si transistor) without using a bonding process or the like.

[0206] Here, the transistor 116 is a transistor that forms a pixel circuit. The transistor 115 is a transistor that forms a driver circuit of the pixel circuit. That is, since the pixel circuit can be formed on the driver circuit, a display device with a narrow frame can be formed.

[0207] As a semiconductor material for an OS transistor, a metal oxide having an energy gap of 2 eV or more, preferably 2.5 eV or more, and more preferably 3 eV or more can be used.

[0208] Because of the large energy gap of the semiconductor layer, OS transistors exhibit extremely low off-state currents of several yA / μm (current value per 1 μm of channel width). At room temperature, the off-state current of an OS transistor per 1 μm of channel width is 1 aA (1×10 -18 A) Below, 1zA(1×10 -21 A) or less, or 1yA (1 x 10 -24 A) or less. Note that the off-state current of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1×10 -15 A) More than 1pA (1×10 -12 Therefore, it can be said that the off-state current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0209] OS transistors have characteristics different from Si transistors, such as being free from impact ionization, avalanche breakdown, and short-channel effects, making them suitable for forming high-voltage, highly reliable circuits. Furthermore, OS transistors are less susceptible to variations in electrical characteristics due to non-uniformity in crystallinity, which is a problem with Si transistors.

[0210] The semiconductor layer of the OS transistor can be, for example, a film represented by an In-M-Zn oxide containing indium, zinc, and M (one or more metals such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium). The In-M-Zn oxide can typically be formed by a sputtering method. Alternatively, it may be formed by an atomic layer deposition (ALD) method.

[0211] For example, an oxide containing indium (In), gallium (Ga), and zinc (Zn) (IGZO) can be used as an In-M-Zn oxide. Alternatively, an oxide containing indium (In), aluminum (Al), and zinc (Zn) (IAZO) can be used. Alternatively, an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (IAGZO) can be used.

[0212] The atomic ratio of the metal elements in a sputtering target used to form an In-M-Zn-based oxide by sputtering preferably satisfies In≧M and Zn≧M. The atomic ratio of the metal elements in such a sputtering target is preferably In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=1:3:2, In:M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5:1:8, or the like, or a composition close to these. The atomic ratio of the semiconductor layer to be formed can vary by ±40% from the atomic ratio of the metal elements contained in the sputtering target.

[0213] The semiconductor layer is made of an oxide semiconductor with a low carrier density. For example, the semiconductor layer has a carrier density of 1×10 17 / cm 3 Less than 1 × 10 15 / cm 3 or less, more preferably 1 × 1013 / cm 3 Less than or equal to 1×10 11 / cm 3 or less, more preferably 1 × 10 10 / cm 3 Less than 1 x 10 -9 / cm 3 An oxide semiconductor having a carrier density above or equal to this can be used. Such an oxide semiconductor is called a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor. The oxide semiconductor has a low density of defect states and stable characteristics.

[0214] Note that the present invention is not limited to these, and an appropriate composition may be used depending on the required semiconductor characteristics and electrical characteristics (field-effect mobility, threshold voltage, etc.) of the transistor. In order to obtain the required semiconductor characteristics of the transistor, it is preferable to appropriately set the carrier density, impurity concentration, defect density, atomic ratio of metal element to oxygen, interatomic distance, density, and the like of the semiconductor layer.

[0215] The display device shown in FIG. 20A has an OS transistor and a light-emitting device with an MML (metal maskless) structure. This configuration can significantly reduce leakage current that may flow through the transistor and leakage current that may flow between adjacent light-emitting elements (also referred to as lateral leakage current or side leakage current). Furthermore, with this configuration, when an image is displayed on the display device, a viewer can observe one or more of image clarity, image sharpness, and a high contrast ratio. By using a configuration in which the leakage current that may flow through the transistor and the lateral leakage current between light-emitting elements are extremely low, a display with minimal light leakage that may occur during black display (also referred to as true black display) can be achieved.

[0216] 20A illustrates a configuration in which the light-emitting layers of the R, G, and B light-emitting elements are different from one another, but the present invention is not limited to this. For example, as shown in FIG. 20B, a color system may be used in which an EL layer 112W that emits white light is provided, and colored layers 114R (red), 114G (green), and 114B (blue) are provided so as to overlap the EL layer 112W to form light-emitting devices 110R, 110G, and 110B.

[0217] The EL layer 112W may have a tandem structure in which EL layers that emit R, G, and B light are connected in series. Alternatively, a structure in which light-emitting layers that emit R, G, and B light may be connected in series may be used. The colored layers 114R, 114G, and 114B may be, for example, red, green, and blue color filters.

[0218] Alternatively, as shown in FIG. 20C, a pixel circuit may be formed using a transistor 117 included in the substrate 60, and one of the source or drain of the transistor 117 and the pixel electrode 111 may be electrically connected.

[0219] <Example of manufacturing method> An example of a method for manufacturing a light-emitting device that can be manufactured using a manufacturing apparatus according to one embodiment of the present invention will be described below, taking the light-emitting device included in the display device 100 shown in the above example configuration as an example.

[0220] 21A to 25B are schematic cross-sectional views illustrating steps in a method for fabricating a light-emitting device, as exemplified below. Note that in Fig. 21A to 25B, the transistor 116, which is a component of the pixel circuit shown in Fig. 20A, and the transistor 115, which is a component of the driver circuit, are omitted.

[0221] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting a display device can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum deposition method, an atomic layer deposition (ALD) method, etc. CVD methods include a plasma enhanced chemical vapor deposition (PECVD) method and a thermal CVD method. One type of thermal CVD method is a metal organic chemical vapor deposition (MOCVD) method. A manufacturing apparatus according to one embodiment of the present invention can include an apparatus for forming a thin film by the above method.

[0222] Furthermore, methods such as spin coating, dipping, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating can be used to form thin films (insulating films, semiconductor films, conductive films, etc.) that constitute display devices and to apply resins and the like used in lithography processes. A manufacturing apparatus according to one embodiment of the present invention can include an apparatus for forming thin films by the above-described methods. A manufacturing apparatus according to one embodiment of the present invention can also include an apparatus for applying resins by the above-described methods.

[0223] Furthermore, when processing the thin film that constitutes the display device, a photolithography method or the like can be used. Alternatively, the thin film may be processed using a nanoimprint method. Furthermore, a method of directly forming island-shaped thin films by a film formation method using a masking mask may be used in combination.

[0224] There are two typical methods for processing thin films using photolithography. One is to form a resist mask on the thin film to be processed, process the thin film by etching or the like, and then remove the resist mask. The other is to form a photosensitive thin film, and then process the thin film into the desired shape by exposure and development.

[0225] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, and ArF laser light. Exposure can also be performed using immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays can also be used as the light used for exposure. Instead of light used for exposure, an electron beam can also be used. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0226] The thin film can be etched by dry etching, wet etching, etc. The manufacturing apparatus according to one embodiment of the present invention can include an apparatus for processing the thin film by the above-described method.

[0227] <Preparation of substrate 60> The substrate 60 may be a substrate having heat resistance sufficient to withstand at least subsequent heat treatment. When an insulating substrate is used as the substrate 60, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like may be used. Also, a semiconductor substrate such as a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate may be used. The shape of the substrate is not limited to a wafer, and a rectangular substrate may also be used.

[0228] In particular, it is preferable to use a substrate having a semiconductor circuit including semiconductor elements such as Si transistors formed on the semiconductor substrate or insulating substrate as the substrate 60. The semiconductor circuit preferably comprises, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, an arithmetic circuit, a memory circuit, etc. may also be configured.

[0229] <Formation of pixel circuit and pixel electrode 111> Next, a plurality of pixel circuits are formed on the substrate 60, and a pixel electrode 111 is formed in each pixel circuit (see FIG. 21A). First, a conductive film that will become the pixel electrode 111 is formed, a resist mask is formed by photolithography, and unnecessary portions of the conductive film are removed by etching. After that, the resist mask is removed, thereby forming the pixel electrode 111.

[0230] It is preferable to use a material (such as silver or aluminum) that has high reflectivity over the entire wavelength range of visible light as the pixel electrode 111. The pixel electrode 111 formed from such a material can be said to be an electrode with light reflectivity. This not only increases the light extraction efficiency of the light-emitting device, but also improves color reproducibility.

[0231] Furthermore, it is preferable that the light-emitting device has a micro-optical resonator (microcavity) structure. Therefore, it is preferable that one of the pair of electrodes of the light-emitting device has an electrode that is transparent and reflective to visible light (semi-transmissive / semi-reflective electrode), and the other has an electrode that is reflective to visible light (reflective electrode). When the light-emitting device has a microcavity structure, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby intensifying the light emitted from the light-emitting device. Therefore, the pixel electrode 111 may have a laminated structure of the above-mentioned highly reflective material and a transparent conductive film (such as indium tin oxide).

[0232] Next, a baking process is performed to remove moisture remaining on the surface of the pixel electrode 111. The baking process can be performed using a vacuum baking device or a film forming device. The vacuum baking conditions are preferably 100° C. or higher.

[0233] Subsequently, surface treatment of the pixel electrode 111 is performed. For example, using a plasma processing apparatus, plasma is generated with a fluorine-based gas such as CF4 and irradiated onto the surface of the pixel electrode 111. By this plasma treatment, the adhesion between the pixel electrode 111 and the EL film formed in the subsequent step can be enhanced, and peeling defects can be suppressed.

[0234] <Formation of EL film 112Rf> Subsequently, an EL film 112Rf, which will later become the EL layer 112R, is formed on the pixel electrode 111.

[0235] The EL film 112Rf has a film containing at least a red light-emitting organic compound. In addition, it may have a structure in which an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer are laminated. The EL film 112Rf can be formed, for example, by a vapor deposition method, a sputtering method, or the like. Note that this is not limited thereto, and the above-described film formation methods can be appropriately used.

[0236] <Formation of protective film 125Rf> Subsequently, a protective film 125Rf, which will later become the protective layer 125R, is formed on the EL film 112Rf (see FIG. 21B).

[0237] The protective layer 125R is a temporary protective layer used to prevent deterioration and disappearance of the EL layer 112R in the manufacturing process of the light-emitting device, and is also called a sacrificial layer. The protective film 125Rf preferably has high barrier properties against moisture and the like and is formed by a film formation method that hardly damages the organic compound during film formation. Further, it is preferably formed of a material that can use an etchant that hardly damages the organic compound in the etching process. For the protective film 125Rf, an inorganic film such as a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic insulating film can be used.

[0238] For example, it is preferable to use a metal such as tungsten, an inorganic insulating film such as aluminum oxide, or a laminated film thereof. Alternatively, a laminated structure of an aluminum oxide film formed by the ALD method and a silicon nitride film formed by the sputtering method may be used. In this case, the film formation temperature when forming the film by the ALD method and the sputtering method is preferably from room temperature to 120°C or lower, more preferably from room temperature to 100°C or lower, because it is possible to reduce the influence on the EL layer. Further, when the protective layer 125R is a laminated film, it is preferable to reduce the stress of the laminated film. Specifically, by setting the stress of each layer constituting the laminated film to be -500 MPa or more and +500 MPa or less, more preferably -200 MPa or more and +200 MPa or less, process troubles such as film peeling and peeling can be suppressed.

[0239] <Formation of resist mask 143a> Subsequently, a resist mask 143a is formed on the pixel electrode 111 corresponding to the light-emitting device 110R (see FIG. 21C). The resist mask 143a can be formed by a lithography process.

[0240] <Formation of protective layer 125R> Subsequently, the protective film 125Rf is etched using the resist mask 143a as a mask to form the protective layer 125R in an island shape. A dry etching method or a wet etching method can be used for the etching process. Thereafter, the resist mask 143a is removed by ashing or a resist stripping solution (see FIG. 21D).

[0241] <Formation of EL layer 112R> Subsequently, the EL film 112Rf is etched using the protective layer 125R as a mask to form the EL layer 112R in an island shape (see FIG. 21E). It is preferable to use a dry etching method for the etching process. Further, cleaning is performed on the side surface of the EL layer 112R using a plasma processing apparatus or the like.

[0242] <Formation of protective films 126Rf and 128Rf> Subsequently, protective films 126Rf and 128Rf that cover the EL layer 112R and the protective layer 125R are formed (see FIG. 21F). For the protective films 126Rf and 128Rf, an inorganic film similar to the protective film 125Rf can be used. The protective films 126Rf and 128Rf are preferably formed by the ALD method, which has excellent coating properties. Alternatively, the protective film 126Rf may be formed by the ALD method, and the protective film 128Rf may be formed by the CVD or sputtering method. For example, the protective film 126Rf can be aluminum oxide, and the protective film 128Rf can be silicon nitride. By laminating different types of films, a tough protective film can be formed.

[0243] <Formation of protective layers 126R and 128R> Subsequently, the protective films 126Rf and 128Rf are anisotropically etched using a dry etching method, and a part of the protective films 126Rf and 128Rf is left to form the protective layers 126R and 128R (see FIG. 22A). The protective layers 126R and 128R are formed on the side surfaces of the EL layer 112R, the protective layer 125R, and the pixel electrode 111, but it is sufficient if at least the side surface of the EL layer 112R can be covered.

[0244] <Formation of EL film 112Gf> Subsequently, a baking process is performed to remove the moisture remaining on the surface of the pixel electrode 111. The baking process can be performed using a vacuum baking apparatus or a film forming apparatus. Here, the conditions for vacuum baking are set to 100°C or lower, preferably 90°C or lower, and more preferably 80°C or lower so as not to damage the EL layer 112R. When vacuum baking is performed at 80°C, it has been found from the measurement results of the temperature programmed desorption gas analysis method (TDS) that by heating for 30 minutes or more, the desorbing moisture (H2O) is sufficiently reduced.

[0245] Subsequently, surface treatment of the exposed pixel electrode 111 is performed. For example, a plasma treatment apparatus is used to generate plasma with a fluorine-based gas such as CF4 and irradiate the surface of the pixel electrode 111. Then, an EL film 112Gf that becomes the EL layer 112G is formed on the pixel electrode 111.

[0246] The EL film 112Gf has a film containing at least a green light-emitting organic compound. In addition, it may be configured such that an electron injection layer, an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer are laminated.

[0247] <Formation of the protective film 125Gf> Subsequently, a protective film 125Gf, which will later become the protective layer 125G, is formed on the EL film 112Gf (see FIG. 22B). The protective film 125Gf can be formed of the same material as the protective film 125Rf.

[0248] <Formation of the resist mask 143b> Subsequently, a resist mask 143b is formed on the pixel electrode 111 corresponding to the light-emitting device 110G (see FIG. 22C). The resist mask 143b can be formed in a lithography process.

[0249] <Formation of the protective layer 125G> Subsequently, using the resist mask 143b as a mask, the protective film 125Gf is etched to form the protective layer 125G in an island shape. A dry etching method or a wet etching method can be used for the etching process. Thereafter, the resist mask 143b is removed by ashing or using a resist stripper (see FIG. 22D).

[0250] <Formation of the EL layer 112G> Subsequently, using the protective layer 125G as a mask, the EL film 112Gf is etched to form the EL layer 112G in an island shape (see FIG. 22E). It is preferable to use a dry etching method for the etching process. Further, cleaning is performed on the side surface of the EL layer 112G and the like using a plasma processing apparatus or the like.

[0251] <Formation of the protective films 126Gf and 128Gf> Subsequently, a protective film 126Gf and a protective film 128Gf that cover the EL layer 112G and the protective layer 125G are formed (see FIG. 22F). For the protective film 126Gf, an inorganic film similar to the protective film 126Rf can be used. Also, for the protective film 128Gf, an inorganic film similar to the protective film 128Rf can be used.

[0252] <Formation of the protective layer 126G> Subsequently, the protective film 126Gf and the protective film 128Gf are anisotropically etched using a dry etching method, and the protective layers 126G and 128G are formed by leaving a part of the protective film 126Gf and the protective film 128Gf (see FIG. 23A). Note that the protective layers 126G and 128G are formed on the side surfaces of the EL layer 112G, the protective layer 125G, and the pixel electrode 111, but it is sufficient if at least the side surface of the EL layer 112G can be covered. Also, the protective layers 126G and 128G may be formed so as to overlap with the protective layers 126R and 128R.

[0253] <Formation of the EL film 112Bf> Subsequently, a baking process for removing moisture remaining on the surface of the pixel electrode 111 is performed. The baking process can be performed using a vacuum baking apparatus or a film forming apparatus. Here, the conditions for vacuum baking are set to 100°C or lower, preferably 90°C or lower, more preferably 80°C or lower so as not to damage the EL layers 112R and 112G.

[0254] Subsequently, surface treatment of the exposed pixel electrode 111 is performed. For example, using a plasma treatment apparatus, plasma is generated using a fluorine-based gas such as CF4 and irradiated onto the surface of the pixel electrode 111. Then, an EL film 112Bf that becomes the EL layer 112B is formed on the pixel electrode 111.

[0255] The EL film 112Bf has a film containing at least a blue light-emitting organic compound. In addition, a configuration in which an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer are laminated may be used.

[0256] <Formation of the protective film 125Bf> Subsequently, a protective film 125Bf that will later become the protective layer 125B is formed on the EL film 112Bf (see FIG. 23B). The protective film 125Bf can be formed of the same material as the protective film 125Rf.

[0257] <Formation of the resist mask 143c> Subsequently, a resist mask 143c is formed on the pixel electrode 111 corresponding to the light-emitting device 110B (see FIG. 23C). The resist mask 143c can be formed by a lithography process.

[0258] <Formation of the protective layer 125B> Subsequently, using the resist mask 143c as a mask, the protective film 125Bf is etched to form the protective layer 125B in an island shape. A dry etching method or a wet etching method can be used for the etching process. Thereafter, the resist mask 143c is removed by ashing or a resist stripping solution (see FIG. 23D).

[0259] <Formation of the EL layer 112B> Subsequently, using the protective layer 125B as a mask, the EL film 112Bf is etched to form the EL layer 112B in an island shape (see FIG. 23E). A dry etching method is preferably used for the etching process. Further, cleaning such as the side surface of the EL layer 112B is performed using a plasma processing apparatus or the like.

[0260] <Formation of the protective films 126Bf and 128Bf><{ Subsequently, protective films 126Bf and 128Bf that cover the EL layer 112B and the protective layer 125B are formed (see FIG. 23F). For the protective film 126Bf, an inorganic film similar to the protective film 126Rf or the like can be used. Also, for the protective film 128Bf, an inorganic film similar to the protective film 128Rf or the like can be used.

[0261] <Formation of the insulating layer 127> Next, an insulating layer 127 is formed so as to fill the spaces between the pixel electrodes and the EL layers (see FIG. 24A). By forming the insulating layer 127, it is possible to eliminate steps and prevent the conductive film (cathode) formed on the EL layer in a later process from being cut off. Furthermore, by covering the vicinity of the side surface of the EL layer with the insulating layer 127, it is possible to prevent impurities from penetrating the EL layer and peeling of the EL layer. The insulating layer 127 can also be considered an interlayer insulating layer provided between the conductive film and the pixel electrode 111.

[0262] The insulating layer 127 is preferably an insulating layer containing an organic material. For example, the insulating layer 127 may be made of acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, or precursors of these resins. Alternatively, the insulating layer 127 may be made of organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin. Alternatively, the insulating layer 127 may be made of a photosensitive resin such as an ultraviolet-curable resin. The photosensitive resin may be either a positive-type or negative-type material, and may be formed using a photoresist or the like in a process similar to a lithography process.

[0263] After forming the insulating layer 127, it is preferable to perform a bake process to reduce the moisture and oxygen contained in the insulating layer 127. Figure 27 shows the results of TDS analysis of the moisture (H2O) and oxygen (O2) desorption amounts of a chemically amplified negative resist that can be used for the insulating layer 127 up to approximately 500°C. Figure 27 compares three samples baked under different baking conditions. It can be seen that the sample baked after PEB (post-exposure bake) had lower moisture and oxygen desorption amounts than the sample not baked. Figure 27 also shows that the amount of moisture and oxygen desorption was lower when baked at a higher temperature (110°C x 1 hr) than when baked at 100°C x 1 hr. Therefore, it is preferable to bake at a temperature that does not damage the EL layer after PEB. In the bake process, vacuum baking is preferable to atmospheric baking because it allows desorption of outgassing, such as moisture, at a lower temperature. The ultimate vacuum pressure for vacuum baking is not particularly limited, and may be any pressure lower than atmospheric pressure.

[0264] Next, an ashing process is performed to planarize the insulating layer 127 (see FIG. 24B). If there are areas where the insulating layer 127 overlaps with each EL layer, the aperture ratio will decrease, so it is preferable that the insulating layer 127 is not present on each EL layer. Note that if the insulating layer 127 is not present on each EL layer when it is formed, this step is unnecessary. Furthermore, as long as the insulating layer 127 on each EL layer can be removed, the upper surface of the insulating layer 127 may be slightly concave or convex, as indicated by the dashed lines in the figure.

[0265] <Formation of barrier film 130f> Next, a barrier film 130f is formed on the protective film 128Bf and the insulating layer 127 (see FIG. 24C). By providing the barrier film 130f, it is possible to suppress outgassing from the insulating layer 127, and further improve the reliability of the light-emitting device. The barrier film 130f can be formed by depositing an inorganic film similar to the protective film 125Rf using a CVD method, an ALD method, a sputtering method, or the like.

[0266] <Formation of Resist Mask 143d> Subsequently, a resist mask 143d is formed over the insulating layer 127 (see FIG. 24D). The resist mask 143d can be formed by a lithography process. The resist mask 143d is preferably formed so as not to overlap with the EL layers.

[0267] <Formation of Barrier Layer 130 and Formation of Protective Layer 128B> Subsequently, the barrier film 130f and the protective film 128Bf are etched by dry etching to form the barrier layer 130 and the protective layer 128B (see FIG. 24E).

[0268] <Formation of protective layer 126B, removal of protective layers 125R, 125G, and 125B> Next, the protective film 126Bf is etched using the barrier layer 130 as a mask to form the protective layer 126B. Furthermore, the protective layers 125R, 125G, and 125B are removed (see FIG. 24F). The protective layers 126B and 128B are formed on the side surfaces of the EL layer 112B, the side surfaces of the protective layer 125B, and the side surfaces of the pixel electrode 111, but it is sufficient that they cover at least the side surfaces of the EL layer 112B. The protective layers 126B and 128B may also be formed to overlap the protective layers 126G and 128G.

[0269] To etch away part of the protective film 126Bf and remove the protective layers 125R, 125G, and 125B, it is preferable to use a wet etching method using an etchant suitable for the constituent materials. It is also preferable to perform a baking process after this process. The baking process can be performed in a vacuum baking apparatus or the film formation apparatus used in the next process. Here, the vacuum baking conditions are set to 100°C or less, preferably 90°C or less, and more preferably 80°C or less, to avoid damaging the EL layers 112R, 112G, and 112B. TDS measurements have shown that when vacuum baking is performed at 80°C, heating for 90 minutes or more sufficiently reduces the amount of moisture (H2O) that is desorbed.

[0270] <Common electrode formation> Next, a conductive layer that will become the common electrode 113 of the light-emitting device is formed on the EL layers 112R, 112G, and 112B exposed in the previous step, and on the barrier layer 130 (see FIG. 25A). The common electrode 113 can be a single film or a laminate film of either a thin metal film (e.g., an alloy of silver and magnesium) that is semi-transparent to the light emitted from the light-emitting layer, or a light-transmitting conductive film (e.g., indium tin oxide or an oxide containing one or more of indium, gallium, zinc, etc.). The common electrode 113 made of such a film can be said to be an electrode that has light transparency. A vapor deposition apparatus and / or a sputtering apparatus can be used in the process of forming the conductive layer that will become the common electrode 113.

[0271] To improve reliability, a layer having any of the functions of an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer may be provided as a common layer on the EL layers 112R, 112G, and 112B before the formation of the common electrode 113.

[0272] By providing a light-reflective electrode as the pixel electrode 111 and a light-transmitting electrode as the common electrode 113, light emitted from the light-emitting layer can be emitted to the outside through the common electrode 113. In other words, a top-emission light-emitting device is formed.

[0273] <Protective layer formation> Subsequently, a protective layer 121 is formed on the common electrode 113 (see FIG. 25B). In the step of forming the protective layer 121, a sputtering device, a CVD device, an ALD device, or the like can be used.

[0274] The above is an example of a method for manufacturing a light-emitting device that can be manufactured using the manufacturing apparatus of one embodiment of the present invention. Figure 25C is an enlarged view of region a shown in Figure 25B. Figure 25D is an enlarged view of region b shown in Figure 25B.

[0275] Note that in a light-emitting device that can be manufactured using the manufacturing apparatus of one embodiment of the present invention, the pixel electrode and the EL layer may have the same area, as shown in Fig. 25E. Alternatively, the EL layer may have a larger area than the pixel electrode, as shown in Fig. 25F. Such a configuration can further increase the aperture ratio.

[0276] <Example of manufacturing equipment> 26 shows an example of a manufacturing apparatus that can be used for the manufacturing steps from the formation of the EL film 112Rf to the formation of the protective layer 121. The basic configuration of the manufacturing apparatus shown in FIG. 26 is the same as that of the manufacturing apparatus shown in FIGS.

[0277] Clusters C1 to C18 will be described in detail below. Fig. 26 is a perspective view of the entire manufacturing equipment, omitting the illustration of utilities, gate valves, etc. For clarity, the interiors of transfer chambers TF1 to TF18 and load lock chambers B1 to B17 are shown visualized.

[0278] <Cluster C1> The cluster C1 has a load chamber LD and atmospheric pressure process devices A1 and A2. The atmospheric pressure process device A1 can be a cleaning device, and the atmospheric pressure process device A2 can be a baking device. In the cluster C1, a cleaning step is performed before the EL film 112Rf is formed.

[0279] <Cluster C2> Cluster C2 includes vacuum process equipment V1 to V5. The vacuum process equipment V1 to V5 are a surface treatment device for performing surface treatment on the base (pixel electrode) on which the EL film 112Rf is formed, a vapor deposition device for forming the EL film 112Rf, and a film formation device (e.g., a sputtering device, an ALD device, etc.) for forming the protective film 125Rf. For example, the vacuum process equipment V1 can be a plasma treatment device, and the vacuum process equipment V2 can be a device for forming an organic compound layer that will become the light-emitting layer (R). Furthermore, the vacuum process equipment V3 and V4 can be assigned to devices for forming organic compound layers such as an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer. Furthermore, the vacuum process equipment V5 can be assigned to a device for forming the protective film 125Rf.

[0280] <Cluster C3> Cluster C3 includes atmospheric pressure process equipment A3 to A7. The atmospheric pressure process equipment A3 to A7 can be equipment used in lithography processes. For example, atmospheric pressure process equipment A3 can be a resin (photoresist) coating equipment, atmospheric pressure process equipment A4 can be a pre-bake equipment, atmospheric pressure process equipment A5 can be an exposure equipment, atmospheric pressure process equipment A6 can be a development equipment, and atmospheric pressure process equipment A7 can be a post-bake equipment. Alternatively, atmospheric pressure process equipment A5 can be a nanoimprint equipment.

[0281] <Cluster C4> Cluster C4 includes vacuum process equipment V6 to V10. For example, vacuum process equipment V6 may be a dry etching equipment for forming the EL layer 112R. Vacuum process equipment V7 may be a plasma processing equipment for cleaning the side surfaces of the EL layer 112R. Vacuum process equipment V8 may be a waiting chamber. Vacuum process equipment V9 may be an ALD equipment for depositing the protective film 126Rf and the protective film 128Rf. Vacuum process equipment V10 may be a dry etching equipment for forming the protective layer 126R and the protective layer 128R.

[0282] <Cluster C5> The cluster C5 includes atmospheric pressure process equipment A8 and A9. The atmospheric pressure process equipment A8 can be a cleaning equipment, and the atmospheric pressure process equipment A9 can be a baking equipment. In the cluster C5, a cleaning step is performed before the EL film 112Gf is formed.

[0283] <Cluster C6> Cluster C6 includes vacuum process equipment V11 to V15. The vacuum process equipment V11 to V15 are a surface treatment equipment for performing surface treatment on the base (pixel electrode) on which the EL film 112Gf is formed, a vapor deposition equipment for forming the EL film 112Gf, and a film formation equipment (e.g., a sputtering equipment, an ALD equipment, etc.) for forming the protective film 125Gf. For example, the vacuum process equipment V11 can be a plasma treatment equipment, and the vacuum process equipment V12 can be a formation equipment for an organic compound layer that will become the light-emitting layer (G). Furthermore, the vacuum process equipment V13 and V14 can be assigned as formation equipment for organic compound layers such as an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer. Furthermore, the vacuum process equipment V15 can be assigned as a formation equipment for the protective film 125Gf.

[0284] <Cluster C7> Cluster C7 includes atmospheric pressure process equipment A10 to A14. The atmospheric pressure process equipment A10 to A14 may be equipment used for lithography processes. The equipment allocation may be the same as that for cluster C3.

[0285] <Cluster C8> Cluster C8 includes vacuum process equipment V16 to V20. For example, vacuum process equipment V16 may be a dry etching equipment for forming the EL layer 112G. Vacuum process equipment V17 may be a plasma processing equipment for cleaning the side surfaces of the EL layer 112G. Vacuum process equipment V18 may be a waiting chamber. Vacuum process equipment V19 may be an ALD equipment for forming the protective film 126Gf and the protective film 128Gf. Vacuum process equipment V20 may be a dry etching equipment for forming the protective layer 126G and the protective layer 128G.

[0286] <Cluster C9> The cluster C9 includes atmospheric pressure process equipment A15 and A16. The atmospheric pressure process equipment A15 can be a cleaning equipment, and the atmospheric pressure process equipment A16 can be a baking equipment. In the cluster C9, a cleaning step is performed before the EL film 112Bf is formed.

[0287] <Cluster C10> Cluster C10 includes vacuum process equipment V21 to V25. The vacuum process equipment V21 to V25 are a surface treatment equipment for performing surface treatment on the base (pixel electrode) on which the EL film 112Bf is formed, a vapor deposition equipment for forming the EL film 112Bf, and a film formation equipment (e.g., a sputtering equipment, an ALD equipment, etc.) for forming the protective film 125Bf. For example, the vacuum process equipment V21 can be a plasma treatment equipment, and the vacuum process equipment V22 can be a formation equipment for an organic compound layer that will become the light-emitting layer (B). Furthermore, the vacuum process equipment V23 and V24 can be assigned as formation equipment for organic compound layers such as an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer. Furthermore, the vacuum process equipment V25 can be assigned as a formation equipment for the protective film 125Bf.

[0288] <Cluster C11> The cluster C11 includes atmospheric pressure process equipment A17 to A21. The atmospheric pressure process equipment A17 to A21 may be equipment used for lithography processes. The equipment allocation may be the same as that for the cluster C3.

[0289] <Cluster C12> Cluster C12 includes vacuum process equipment V26 to V29. For example, vacuum process equipment V26 may be a dry etching equipment that forms the EL layer 112B. Vacuum process equipment V27 may be a plasma processing equipment that cleans the side surfaces of the EL layer 112G. Vacuum process equipment V28 may be a waiting chamber. Vacuum process equipment V29 may be an ALD equipment that forms the protective film 126Bf and the protective film 128Bf.

[0290] <Cluster C13> Cluster C13 includes atmospheric pressure process equipment A22 to A26. The atmospheric pressure process equipment A22 to A26 may be equipment used for lithography processes. The equipment allocation may be the same as that for cluster C3.

[0291] <Cluster C14> Cluster C14 includes vacuum process equipment V30 and V31. The vacuum process equipment V30 can be an ashing equipment for planarizing the insulating layer 127 or a dry etching equipment with an ashing function. The vacuum process equipment V31 can be a film formation equipment (e.g., a sputtering equipment, an ALD equipment, a CVD equipment, etc.) for forming the barrier film 130f.

[0292] <Cluster C15> Cluster C15 includes atmospheric pressure process equipment A27 to A31. The atmospheric pressure process equipment A27 to A31 may be equipment used for lithography processes. The equipment allocation may be the same as that for cluster C3.

[0293] <Cluster C16> The cluster C16 includes a vacuum process tool V32. The vacuum process tool V29 may be a dry etching tool for etching the barrier film 130f and the protective film 128Bf.

[0294] <Cluster C17> Cluster C15 includes atmospheric pressure process equipment A32 and A33. The atmospheric pressure process equipment A32 may be a wet etching equipment. In the atmospheric pressure process equipment A32, an etching process for the protective film 126Bf and the protective layers 125R, 125G, and 125B is performed.

[0295] <Cluster C18> Cluster C18 includes vacuum process units V33 to V35 and an unload chamber ULD. The vacuum process unit V33 can be assigned to an organic compound layer forming unit (e.g., a vapor deposition unit) for forming any of the electron injection layer, electron transport layer, charge generation layer, hole transport layer, and hole injection layer. The vacuum process unit V34 can be a film forming unit (e.g., a sputtering unit) for forming the common electrode 113. The vacuum process unit V35 can be a film forming unit (e.g., a sputtering unit) for forming the protective layer 121. Alternatively, a separate vacuum process unit V may be provided, and a plurality of different film forming units (e.g., a vapor deposition unit, an ALD unit, etc.) may be provided to form the common electrode 113 and the protective layer 121 as stacked films.

[0296] 21A to 25B. The steps using the manufacturing apparatus shown in Fig. 26, the processing equipment, and the elements corresponding to the manufacturing method shown in Fig. 21A to 25B are summarized in Tables 1 and 2. Note that the description of the loading and unloading of substrates into and from the load lock chamber and each apparatus is omitted.

[0297] [Table 1]

[0298] [Table 2]

[0299] The manufacturing apparatus according to one embodiment of the present invention has the function of automatically carrying out steps No. 1 to No. 72 shown in Tables 1 and 2.

[0300] This embodiment mode can be implemented in appropriate combination with any of the structures described in the other embodiment modes. [Explanation of symbols]

[0301] A: atmospheric pressure process equipment, A1: atmospheric pressure process equipment, A2: atmospheric pressure process equipment, A3: atmospheric pressure process equipment, A4: atmospheric pressure process equipment, A5: atmospheric pressure process equipment, A6: atmospheric pressure process equipment, A7: atmospheric pressure process equipment, A8: atmospheric pressure process equipment, A9: atmospheric pressure process equipment, A10: atmospheric pressure process equipment, A11: atmospheric pressure process equipment, A12: atmospheric pressure process equipment, A13: atmospheric pressure process equipment, A14: atmospheric pressure process equipment, A15: atmospheric pressure process equipment, A16: atmospheric pressure process equipment, A17: atmospheric pressure process equipment, A18: atmospheric pressure process equipment, A19: atmospheric pressure process equipment, A20: atmospheric pressure process equipment, A21: atmospheric pressure process equipment, A22: atmospheric pressure process equipment, A23: atmospheric pressure process equipment, A24: atmospheric pressure process equipment, A25: atmospheric pressure process equipment, A26: atmospheric pressure process equipment, A27: atmospheric pressure process equipment, A28: atmospheric pressure process equipment, A29: atmospheric pressure process equipment, A30: atmospheric pressure process equipment, A31: atmospheric pressure process equipment, A32: atmospheric pressure process equipment, A33: atmospheric pressure process equipment, B1: load lock chamber, B2: load lock chamber, B3: load lock chamber, B4: load lock chamber, B5: load lock chamber, B6: load lock chamber, B7 : load lock chamber, B8: load lock chamber, B9: load lock chamber, B10: load lock chamber, B11: load lock chamber, B12: load lock chamber, B13: load lock chamber, B14: load lock chamber, B15: load lock chamber, B16: load lock chamber, B17: load lock chamber, C: plasma processing device, D: film formation device, C1: cluster, C2: cluster, C3: cluster, C4: cluster, C5: cluster, C6: cluster, C7: cluster, C8: cluster, C9: cluster, C10: cluster, C11: cluster, C12: cluster, C13: cluster Sta, C14: Cluster, C15: Cluster, C16: Cluster, C17: Cluster, C18: Cluster, E1: Etching equipment, E2: Etching equipment, S: Surface treatment equipment, TF: Transfer chamber, TF1: Transfer chamber, TF2: Transfer chamber, TF3: Transfer chamber, TF4: Transfer chamber, TF5: Transfer chamber, TF6: Transfer chamber, TF7: Transfer chamber, TF8: Transfer chamber, TF9: Transfer chamber, TF10: Transfer chamber, TF11: Transfer chamber, TF12: Transfer chamber,TF13: Transfer chamber, TF14: Transfer chamber, TF15: Transfer chamber, TF16: Transfer chamber, TF17: Transfer chamber, TF18: Transfer chamber, V: Vacuum process device, V1: Vacuum process device, V2: Vacuum process device, V3: Vacuum process device, V4: Vacuum process device, V5: Vacuum process device, V6: Vacuum process device, V7: Vacuum process device, V8: Vacuum process device, V9: Vacuum process device, V10: Vacuum process device, V11: Vacuum process device, V12: Vacuum process device, V13: Vacuum process equipment, V14: Vacuum process equipment, V15: Vacuum process equipment, V16: Vacuum process equipment, V17: Vacuum process equipment, V18: Vacuum process equipment, V19: Vacuum process equipment, V20: Vacuum process equipment, V21: Vacuum process equipment, V22: Vacuum process equipment, V23: Vacuum process equipment, V24: Vacuum process equipment, V25: Vacuum process equipment, V26: Vacuum process equipment, V27: Vacuum process equipment, V28: Vacuum process equipment, V29: Vacuum process equipment, V30: Vacuum process equipment, V31: Vacuum process equipment, V32: Vacuum process equipment process device, V33: vacuum process device, V34: vacuum process device, V35: vacuum process device, W: waiting room, 30: film formation device, 31: film formation material supply unit, 32: mask jig, 33: substrate alignment unit, 35: opening, 40: gate valve, 51: substrate holder, 52: evaporation source, 53: shutter, 54: exhaust port, 55: inlet, 56: lower electrode, 57: target, 58: upper electrode, 59: shower plate, 60: substrate, 60a: substrate, 60b: substrate, 61: heater, 62: substrate holder, 63: substrate holder, 70: transfer device, 70a: transfer device, 70b : conveying device, 70c: conveying device, 70d: conveying device, 70e: conveying device, 70f: conveying device, 70g: conveying device, 70h: conveying device, 70i: conveying device, 70j: conveying device, 70k: conveying device, 70m: conveying device, 70n: conveying device, 70p: conveying device, 71a: conveying device, 71b: conveying device, 71c: conveying device, 71d: conveying device, 80a: stage, 80b: stage, 80c: stage, 80d: stage, 80e: stage, 80f: stage, 80g: stage, 81a: stage, 81b: stage, 81c: stage, 81d: stage,81e: stage, 81f: stage, 81g: stage, 81h: stage, 81i: stage, 81j: stage, 82: pin, 91: lifting mechanism, 92: arm, 93: hand part, 94: lifting mechanism, 95: arm, 96: substrate fixing part, 97: rotation mechanism, 100: display device, 110B: light emitting device, 110G: light emitting device, 110R: light emitting device, 111: pixel Electrode, 112B: EL layer, 112Bf: EL film, 112G: EL layer, 112Gf: EL film, 112R: EL layer, 112Rf: EL film, 112W: EL layer, 113: common electrode, 114B: colored layer, 114G: colored layer, 114R: colored layer, 115: transistor, 116: transistor, 117: transistor, 121: protective layer, 125B: protective layer, 125Bf: protective film, 12 5G: protective layer, 125Gf: protective film, 125R: protective layer, 125Rf: protective film, 126B: protective layer, 126Bf: protective film, 126G: protective layer, 126Gf: protective film, 126R: protective layer, 126Rf: protective film, 127: insulating layer, 128B: protective layer, 128Bf: protective film, 128G: protective layer, 128Gf: protective film, 128R: protective layer, 128Rf: protective film, 130: barrier layer, 130f: barrier film, 143a: resist mask, 143b: resist mask, 143c: resist mask, 143d: resist mask, 200: transfer device, 201: controller, 202: power source, 203: battery, 204: wheels, 205: gas cylinder, 206: valve, 207: valve, 208: loading / unloading entrance, 209: transfer device, 210: inlet, 211: outlet,

Claims

[Claim 1] The system includes a load chamber, a first etching device, a plasma processing device, a standby chamber, a film forming device, a second etching device, an unload chamber, a transfer chamber, and a transport device, the transport device is provided in the transfer chamber, the load chamber, the first etching device, the plasma processing device, the standby chamber, the film forming device, the second etching device, and the unload chamber are connected to the transfer chamber via gate valves, respectively; the transfer device is capable of transferring a workpiece from any one of the load chamber, the first etching device, the plasma processing device, the standby chamber, the film forming device, the second etching device, and the unload chamber to any other one of the others; a workpiece having an organic compound film, a first inorganic film, and a resist mask laminated in this order on a silicon substrate is carried into the load chamber; transporting the workpiece through the first etching device, the plasma processing device, the standby chamber, the film forming device, and the second etching device in this order; The organic compound film is processed into an island-shaped organic compound layer, a protective layer is formed on a side surface of the organic compound layer, and the workpiece is carried out into the unload chamber. the first etching device is a dry etching device, and the first inorganic film is formed into an island shape using the resist mask as a mask, and the organic compound film is processed into the island-shaped organic compound layer using the island-shaped first inorganic film as a mask; the first etching device has an ashing function for removing the resist mask, the plasma processing apparatus irradiates plasma generated from an inert gas onto the side surfaces of the island-shaped organic compound layer to clean the side surfaces of the island-shaped organic compound layer; The waiting chamber can accommodate a plurality of the workpieces, the film formation apparatus is an ALD apparatus, and a second inorganic film is formed to cover the island-shaped first inorganic film and the island-shaped organic compound layer; the film forming apparatus is a batch processing type, the second etching device is a dry etching device, and is a manufacturing device that forms the protective layer on a side surface of the island-shaped organic compound layer by anisotropically etching the second inorganic film, The manufacturing apparatus is a third cluster; a plurality of devices for performing a photolithography process of the resist mask are defined as a second cluster; a first cluster including a plurality of devices for performing the film-forming steps of the organic compound film and the first inorganic film; the first cluster, the second cluster, and the third cluster are connected in this order; Between the first cluster and the second cluster, and between the second cluster and the third cluster, The workpiece is placed in a container controlled under an inert gas atmosphere and transferred. There are three combinations of the first cluster, the second cluster, and the third cluster, the first cluster includes a surface treatment device; The surface treatment device uses plasma generated from a gas containing halogen, the first cluster has one or more film formation apparatuses selected from a vapor deposition apparatus, a sputtering apparatus, a CVD apparatus, and an ALD apparatus; The second cluster is a light-emitting device manufacturing apparatus having a coating apparatus, an exposure apparatus, a developing apparatus, and a baking apparatus.

Images