Improvement of com metal breakdown causing post-process film peeling

Abstract

This invention discloses a method to improve post-process film peeling caused by ComMetal failure, relating to the field of display manufacturing technology. The method includes: ComMetal film removal, used to remove the abnormal CM film layer caused by the failure; Organic cleaning, used to clean the surface of the organic photoresist; Baking the Organic layer to fully evaporate the absorbed moisture; Cleaning the Organic layer after baking to remove surface foreign matter; Forming a ComMetal film layer; Patterning to form ComMetal photoresist; Etching Com Metal lines through development; Removing the ComMetal photoresist to complete the rework process. This invention provides a method to improve post-process film peeling caused by ComMetal failure by adding an OC baking process to the rework process for the failed CM wafer, thereby improving the post-process film peeling abnormality.

Description

Technical Field

[0001] This invention relates to the field of display manufacturing technology, and in particular to a method for improving the post-process film peeling caused by Com Metal failure. Background Technology

[0002] During the production process, downtime can occur due to various reasons, such as: abnormal transmission sensor causing transmission failure, abnormal transmission shaft, or broken pieces, etc.

[0003] In the CM (Com Metal) process, such as Figure 1 As shown, a CM layer is formed on the OC layer. However, if a malfunction occurs, the film layer cannot form normally. Therefore, the malfunctioning CM wafer undergoes a rework process, which involves first removing the abnormal film layer caused by the malfunction, cleaning, and then repeating the process. Figure 2 As shown. However, the reworked wafer is prone to film peeling in subsequent processes, such as... Figure 3 and Figure 4 As shown, this results in scrapping and a decrease in production yield. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a method to improve the film peeling in the later process caused by Com Metal failure. By adding an OC baking process to the CM failure sheet in the rework process, the abnormal film peeling in the later process can be improved.

[0005] This invention is implemented as follows:

[0006] An improvement method for Com Metal crashes causing film peeling in subsequent processes includes:

[0007] CME step: Com Metal stripping, used to remove abnormal CM film layers caused by a shutdown;

[0008] OC CLN step: Organic cleaning, used to clean the surface of organic photoresist;

[0009] OC Rebake Steps: Bake the Organic layer to allow the absorbed moisture to evaporate completely;

[0010] OC Re-CLN steps: After baking the Organic layer, clean it to remove any foreign matter from the surface;

[0011] CMS step: Formation of a Com Metal film;

[0012] CMD steps: Patterning to form Com Metal photoresist;

[0013] CME step: Etching of Com Metal circuitry via development;

[0014] CMR step: Remove Com Metal photoresist and complete the rework process.

[0015] Furthermore, in the OC Rebake step, the baking temperature is 230°C.

[0016] Furthermore, in the OC Rebake step, the baking time is 48 minutes.

[0017] Furthermore, in the OC Re-CLN step, pure water is used to clean the surface foreign matter.

[0018] Furthermore, in the CME step, aluminic acid is used to remove the abnormal CM film layer.

[0019] Furthermore, in the OC CLN step, the surface of the organic photoresist is cleaned with pure water.

[0020] Furthermore, in the CMR step, STR solution is used to remove Com Metal photoresist, and the components of STR solution include MEA and DMSO.

[0021] The present invention has the following advantages:

[0022] By adding an OC baking step to the reprocessing of CM wafers, the absorbed moisture can be fully evaporated, which can improve the abnormality of film peeling in the later process, reduce the amount of scrapped products, and improve the first-pass yield of the production line. Attached Figure Description

[0023] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0024] Figure 1 This is a schematic diagram of the film structure in a normal, undamaged CM process in the prior art.

[0025] Figure 2 This is a schematic diagram of the film structure that causes a malfunction in the CM process in the prior art;

[0026] Figure 3 This is a schematic diagram of the membrane peeling structure in the existing technology after the CM (Chemical Machine) malfunctions.

[0027] Figure 4 This is a partial image of a film-peeled product after a CM (Chemical Machine) malfunction in the prior art.

[0028] Figure 5 This is a flowchart of the method according to an embodiment of the present invention;

[0029] Figure 6 This is a schematic diagram of water evaporation in the OC Rebake step of an embodiment of the present invention;

[0030] Figure 7This is a schematic diagram of the film layer structure in the process after the CM malfunctions according to an embodiment of the present invention;

[0031] Figure 8 This is the result of the large-scale verification of ATP yield in the embodiments of the present invention;

[0032] Figure 9 This is the quantitative verification of the P-test yield result in the embodiments of the present invention;

[0033] Figure 10 This invention provides a large-scale verification of the P-test yield results in its embodiments. Detailed Implementation

[0034] This invention provides a method to improve the film peeling in subsequent processes caused by Com Metal failure. By adding an OC baking process to the CM failure wafer in the rework process, the abnormal film peeling in subsequent processes can be improved.

[0035] The overall concept of the technical solutions in the embodiments of the present invention is as follows:

[0036] During the production process, the inventors discovered that if a malfunction occurs in the CM (Com Metal) process, reworking the malfunctioning CM wafer can easily lead to film peeling in subsequent processes, resulting in scrap and reduced production yield. Therefore, it is necessary to improve the reworking process for malfunctioning wafers to increase yield and reduce production capacity loss.

[0037] Through in-depth consideration and repeated observation of each process step, the inventors discovered that the OC layer on the failed wafer exhibited unevenness and depressions. Analysis revealed that this was due to the glass substrate remaining in water / chemical solutions after a failure in the CM process. Because OC (Organic: acrylic-based organic photoresist) absorbs water, this moisture evaporates during subsequent high-temperature processing, causing film peeling. Therefore, by adding an OC baking process after Organic cleaning in the reprocessing step, the moisture in the OC is preemptively evaporated, preventing film peeling caused by moisture evaporation in subsequent high-temperature processes, thus improving yield and reducing production losses. The inventors' contribution to the prior art also includes the discovery of this problem.

[0038] Before the change:

[0039] CME (Com Metal stripping) → OC CLN (Organic cleaning) → CMS (Com Metal film formation) → CMD (Com Metal photoresist formation) → CME (Com Metal circuit etching) → CMR (Com Metal photoresist removal)

[0040] After the change:

[0041] CME (Com Metal stripping) → OC CLN (Organic cleaning) → OC Rebake (Organic baking) → OCRe-CLN (Organic baking followed by cleaning) → CMS (Com Metal film formation) → CMD (Com Metal photoresist formation) → CME (Com Metal circuit etching) → CMR (Com Metal photoresist removal)

[0042] This embodiment provides a method to improve the problem of film peeling in subsequent processes caused by Com Metal crashes, such as... Figure 5 As shown, it includes:

[0043] CME step: Com Metal stripping, used to remove abnormal CM film layers caused by a shutdown;

[0044] OC CLN step: Organic cleaning, used to clean the surface of organic photoresist;

[0045] OC Rebake Steps: Bake the organic layer to allow the absorbed moisture to evaporate completely, such as... Figure 6 As shown;

[0046] OC Re-CLN steps: After baking the Organic layer, clean it to remove any foreign matter from the surface;

[0047] CMS step: Formation of a Com Metal film;

[0048] CMD steps: Patterning to form Com Metal photoresist;

[0049] CME step: Etching of Com Metal circuitry via development;

[0050] CMR steps: Remove Com Metal photoresist and complete the rework process, such as... Figure 7 As shown.

[0051] In one possible implementation, the baking temperature in the OC Rebake step is 230°C, but it can also be adjusted according to actual needs.

[0052] In one possible implementation, the baking time in the OC Rebake step is 48 minutes, but it can also be adjusted according to actual needs.

[0053] In one possible implementation, the OC Re-CLN step involves using pure water to clean the surface foreign matter.

[0054] In one possible implementation, the CME step involves using aluminic acid to remove the abnormal CM film layer.

[0055] In one possible implementation, the OC CLN step involves cleaning the surface of the organic photoresist with pure water.

[0056] In one possible implementation, the CMR step involves using an STR solution to remove Com Metal photoresist. The STR solution comprises MEA (2-aminoethanol, also known as ethanolamine) and DMSO (dimethyl sulfoxide).

[0057] This invention improves subsequent membrane peeling abnormalities by adding an OC baking step to the reprocessing of CM wafers, allowing for complete evaporation of absorbed moisture. ATP and P test data show no abnormalities in yield levels. Figures 8 to 10 As shown, this improvement method can reduce product scrap and increase production line first-pass yield.

[0058] While specific embodiments of the present invention have been described above, those skilled in the art should understand that the specific embodiments described are merely illustrative and not intended to limit the scope of the present invention. Equivalent modifications and variations made by those skilled in the art in accordance with the spirit of the present invention should be covered within the scope of protection of the claims of the present invention.

Claims

1. A method for improving the film peeling in subsequent processes caused by Com Metal crashes, characterized in that, Includes the following steps: CME membrane removal procedure: Com Metal membrane removal is used to remove abnormal CM membrane layers caused by a shutdown; OC CLN step: Organic cleaning, used to clean the surface of organic photoresist; OC Rebake step: Bake the Organic layer to allow the absorbed moisture to evaporate fully; the baking temperature in the OC Rebake step is 230℃; OC Re-CLN steps: After baking the Organic layer, clean it to remove any foreign matter from the surface; CMS step: Formation of a Com Metal film; CMD steps: Patterning to form Com Metal photoresist; CME circuit etching steps: Etching of Com Metal circuits by development; CMR step: Remove Com Metal photoresist to complete the rework process; In the CMR step, STR solution is used to remove ComMetal photoresist. The components of STR solution include MEA and DMSO.

2. The method according to claim 1, characterized in that: In the OC Rebake step, the baking time is 48 minutes.

3. The method according to claim 1, characterized in that: In the OC Re-CLN step, pure water is used to clean the surface foreign matter.

4. The method according to claim 1, characterized in that: In the CME stripping step, aluminic acid is used to remove the abnormal CM film layer.

5. The method according to claim 1, characterized in that: In the OC CLN step, the surface of the organic photoresist is cleaned with pure water.

Images