Semiconductor device, substrate unit, and method for manufacturing substrate unit

Abstract

Embodiments described herein relate generally to a semiconductor device, a substrate unit, and a method of manufacturing a semiconductor device.SOLUTION: A semiconductor device according to one embodiment includes a substrate, an electronic component, a plurality of bonding portions, and a first metal portion. The substrate has a first surface, a second surface located opposite to the first surface, and a first side surface extending from a first edge of the first surface to a second edge of the second surface. The electronic component is mounted on the second surface. The plurality of bonding portions are provided on the first surface and include a first bonding portion. The first metal portion includes a first portion extending along the first surface and a second portion extending along the first side surface. An area of the first metal portion when viewed from a first direction which is a thickness direction of the substrate is larger than that of the first bonding portion.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD Embodiments of the present invention relate to a semiconductor device, a substrate unit, and a method for manufacturing the substrate unit. [Background technology]

[0002] BACKGROUND ART A semiconductor device is known that includes a substrate, a plurality of solder balls provided on a first surface of the substrate, and an electronic component mounted on a second surface of the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] U.S. Patent Application Publication No. 2021 / 0125952 Summary of the Invention [Problem to be solved by the invention]

[0004] One embodiment provides a semiconductor device, a substrate unit, and a method for manufacturing the substrate unit that can suppress the occurrence of defects. [Means for solving the problem]

[0005] A semiconductor device according to one embodiment includes a substrate, an electronic component, a plurality of bonding portions, and a first metal portion. The substrate has a first surface, a second surface opposite the first surface, and a first side surface extending from a first edge of the first surface to a second edge of the second surface. The electronic component is mounted on the second surface. The plurality of bonding portions are provided on the first surface and include a first bonding portion. The first metal portion includes a first portion extending along the first surface and a second portion extending along the first side surface. The first metal portion has a larger area than the first bonding portion when viewed in a first direction, which is the thickness direction of the substrate. [Brief explanation of the drawings]

[0006] [Figure 1]FIG. 2 is a cross-sectional view showing the substrate unit of the first embodiment. [Figure 2] FIG. 2 is a plan view showing the substrate of the first embodiment. [Figure 3] 1 is a cross-sectional view showing a semiconductor device according to a first embodiment. [Figure 4] FIG. 2 is a perspective view showing the back surface of the semiconductor device according to the first embodiment. [Figure 5] FIG. 2 is a bottom view showing the back surface of the semiconductor device according to the first embodiment. [Figure 6] 5A to 5C are cross-sectional views showing a method for manufacturing the substrate unit according to the first embodiment. [Figure 7] FIG. 4 is a cross-sectional view illustrating the heat dissipation action of the board unit according to the first embodiment. [Figure 8] 5A to 5C are cross-sectional views for explaining matters relating to the manufacture of the substrate unit of the first embodiment. [Figure 9] 10A to 10C are cross-sectional views showing a method for manufacturing a substrate unit according to a first modified example of the first embodiment. [Figure 10] 10A to 10C are cross-sectional views showing a method for manufacturing a substrate unit according to a second modified example of the first embodiment. [Figure 11] 10A to 10C are cross-sectional views showing a method for manufacturing a substrate unit according to a third modified example of the first embodiment. [Figure 12] 10A to 10C are cross-sectional views showing a method for manufacturing a substrate unit according to a fourth modified example of the first embodiment. [Figure 13] 13A to 13C are cross-sectional views showing a method for manufacturing a substrate unit according to a fifth modified example of the first embodiment. [Figure 14] 13A to 13C are cross-sectional views showing a method for manufacturing a substrate unit according to a sixth modified example of the first embodiment. [Figure 15] FIG. 10 is a bottom view showing the back surface of the semiconductor device according to the second embodiment. [Figure 16] FIG. 10 is a cross-sectional view showing a substrate unit according to a third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, semiconductor devices, substrate units, and substrate unit manufacturing methods according to embodiments will be described with reference to the drawings. In the following description, components having the same or similar functions will be assigned the same reference numerals. Further, duplicate descriptions of these components may be omitted. In this application, "parallel," "orthogonal," or "same" may include "substantially parallel," "substantially orthogonal," or "substantially the same," respectively. In this application, "connection" is not limited to mechanical connection, but may also include electrical connection. In other words, "connection" is not limited to direct connection with an object, but may also include connection with an object via another element interposed therebetween.

[0008] In this application, the +X direction, the −X direction, the +Y direction, the −Y direction, the +Z direction, and the −Z direction are defined as follows: The +X direction, the −X direction, the +Y direction, and the −Y direction are directions parallel to the first surface 31a of the package substrate 31 (described later) (see FIG. 1). The +X direction is the direction from the second side surface 31cb of the package substrate 31 (described later) toward the first side surface 31ca (see FIG. 1). The −X direction is the direction opposite to the +X direction. When the +X direction and the −X direction are not distinguished, they are simply referred to as the “X direction.” The +Y direction and the −Y direction are directions that intersect (e.g., are perpendicular to) the X direction. The +Y direction is the direction from the fourth surface 31cd of the package substrate 31 (described later) toward the third surface 31cc (see FIG. 4). The −Y direction is the direction opposite to the +Y direction. When the +Y direction and the −Y direction are not distinguished, they are simply referred to as the “Y direction.” The +Z direction and the -Z direction are directions that intersect (for example, are perpendicular to) the X direction and the Y direction. The +Z direction is the direction from the first surface 31a to the second surface 31b of the package substrate 31 described later (see FIG. 1). The -Z direction is the direction opposite to the +Z direction. When there is no need to distinguish between the +Z direction and the -Z direction, they are simply referred to as the "Z direction." The Z direction is the thickness direction of the package substrate 31. The Z direction is an example of the "first direction." The Y direction is an example of the "second direction." The X direction is an example of the "third direction."

[0009] (First embodiment) <1. Overall configuration of the board unit> A substrate unit 1 of a first embodiment will be described with reference to FIGS. Fig. 1 is a cross-sectional view showing the substrate unit 1. For ease of explanation, the solder resist layer is not shown in Fig. 1.

[0010] The board unit 1 is an assembly on which components including circuits are mounted, and includes, for example, a board 10, a semiconductor device 30, and a plurality of solder fillets 70.

[0011] <2. Substrate> The substrate 10 is a printed wiring board. The substrate 10 is a plate member extending in the X and Y directions. The substrate 10 is an example of a "circuit board" and an example of a "second substrate." The substrate 10 has a first surface 10a and a second surface 10b. The first surface 10a faces in the +Z direction. The second surface 10b is located on the opposite side of the first surface 10a and faces in the -Z direction. The substrate 10 includes, for example, an insulating base material 11, a conductive pattern 12, and a solder resist layer 13 (see FIG. 7).

[0012] (insulating substrate) The insulating base material 11 is an insulating base material that forms the base of the substrate 10. The insulating base material 11 is an insulating hard member made of an insulating material such as a glass epoxy material or polyimide.

[0013] (Conductive pattern) The conductive pattern 12 is a conductive portion provided on the insulating substrate 11. The conductive pattern 12 is formed of, for example, a copper material. The conductive pattern 12 includes, for example, a plurality of pads 21, a plurality of pads 22, a plurality of conductive lines 23, and a conductive layer 24.

[0014] The pads 21 are electrical connection pads and are arranged on the first surface 10a of the substrate 10 at separate positions corresponding to the solder balls 35 (described later) of the semiconductor device 30.

[0015] The pads 22 are fixing pads on which solder fillets 70 are provided. The pads 22 are arranged separately on the first surface 10a of the substrate 10 at positions corresponding to metal portions (described later) of the semiconductor device 30.

[0016] 2 is a plan view showing the substrate 10. Each pad 22 has a first portion 22a and a second portion 22b. When viewed from the Z direction, the first portion 22a overlaps with the semiconductor device 30. On the other hand, when viewed from the Z direction, the second portion 22b does not overlap with the semiconductor device 30. The second portion 22b extends from the first portion 22a in a direction away from the semiconductor device 30.

[0017] Returning to FIG. 1, the conductive line 23 and the conductive layer 24 will be described. The plurality of conductive lines 23 are conductive connection portions provided on the insulating substrate 11. The conductive lines 23 are provided inside or on the surface of the insulating substrate 11. Each conductive line 23 extends linearly. Some of the conductive lines 23 are connected to, for example, pads 21. Another one or more (e.g., multiple) conductive lines 23 connect pads 22 and the conductive layer 24.

[0018] The conductive layer 24 is a conductive portion provided inside the insulating base material 11 and extending in a planar (plate-like) shape along the X and Y directions. The conductive layer 24 is a conductive portion having a larger area than the conductive line 23. The conductive layer 24 is a so-called solid layer. The conductive layer 24 is, for example, a ground layer of the substrate 10. The conductive layer 24 may be a power supply layer of the substrate 10, or a metal layer for heat dissipation.

[0019] (solder resist) The solder resist layer 13 (see FIG. 7) is a protective layer provided on the first surface 10a and the second surface 10b of the substrate 10. The solder resist layer 13 is provided, for example, on the first surface 10a of the substrate 10 at a position away from the pads 21 and 22. The solder resist layer 13 may cover the edges of the pads 21 and / or the edges of the pads 22.

[0020] <3. Semiconductor Devices> Next, the semiconductor device 30 will be described. 3 is a cross-sectional view showing a semiconductor device 30. The semiconductor device 30 includes, for example, a substrate 31, one or more electronic components 32, a plurality of bonding wires 33, a sealing member 34, a plurality of solder balls 35, and a plurality of metal portions 36. In the following, in order to distinguish the substrate 31 of the semiconductor device 30 from the substrate 10 described above, the substrate 31 will be referred to as a "package substrate 31."

[0021] <3.1 Package substrate> The package substrate 31 is a printed wiring board. The package substrate 31 is a plate member that extends along the X and Y directions. When viewed from the Z direction, the package substrate 31 has the same rectangular shape as the outer shape of the semiconductor device 30. The package substrate 31 is an example of a "first substrate."

[0022] The package substrate 31 has a first surface 31a, a second surface 31b, and a peripheral surface 31c. The first surface 31a faces in the -Z direction. The first surface 31a is a plane extending along the X and Y directions. The second surface 31b is located on the opposite side of the first surface 31a and faces in the +Z direction. The second surface 31b is a plane extending along the X and Y directions. The peripheral surface 31c extends in a direction intersecting the first surface 31a and the second surface 31b, and spans the periphery of the first surface 31a and the periphery of the second surface 31b. The peripheral surface 31c faces in the Z direction.

[0023] FIG. 4 is a perspective view showing the back surface of the semiconductor device 30. The package substrate 31 is a rectangular plate. The first surface 31a described above has four edges 31aa to 31ad corresponding to the four sides of the package substrate 31. Edge 31aa is the edge on the +X direction side. Edge 31aa extends in the Y direction. Edge 31ab is the edge on the -X direction side. Edge 31ab extends in the Y direction. Edge 31ac is the edge on the +Y direction side. Edge 31ac extends in the X direction and spans one end of edge 31aa and one end of edge 31ab. Edge 31ad is the edge on the -Y direction side. Edge 31ad extends in the X direction and spans the other end of edge 31aa and the other end of edge 31ab. Edge 31aa is an example of a "first edge." Edge 31ab is an example of a "third edge."

[0024] The second surface 31b described above has four edges 31ba to 31bd corresponding to the four sides of the package substrate 31. Edge 31ba is the edge on the +X direction side. Edge 31ba extends in the Y direction. Edge 31bb is the edge on the -X direction side. Edge 31bb extends in the Y direction. Edge 31bc is the edge on the +Y direction side. Edge 31bc extends in the X direction, spanning one end of edge 31ba to one end of edge 31bb. Edge 31bd is the edge on the -Y direction side. Edge 31bd extends in the X direction, spanning the other end of edge 31ba to the other end of edge 31bb. Edge 31ba is an example of a "second edge." Edge 31bb is an example of a "fourth edge."

[0025] The peripheral surface 31c has four side surfaces 31ca to 31cd corresponding to the four sides of the package substrate 31. The first side surface 31ca is a surface facing the +X direction. The first side surface 31ca is a plane extending along the Y and Z directions. The first side surface 31ca spans between the edge 31aa of the first surface 31a and the edge 31ba of the second surface 31b. The second side surface 31cb is located on the opposite side to the first side surface 31ca. The second side surface 31cb is a surface facing the -X direction. The second side surface 31cb is a plane extending along the Y and Z directions. The second side surface 31cb spans between the edge 31ab of the first surface 31a and the edge 31bb of the second surface 31b.

[0026] The third side surface 31cc is a surface facing the +Y direction. The third side surface 31cc is a plane extending along the X and Z directions. The third side surface 31cc spans between the edge 31ac of the first surface 31a and the edge 31bc of the second surface 31b. The fourth side surface 31cd is located on the opposite side from the third side surface 31cc. The fourth side surface 31cd is a surface facing the -Y direction. The fourth side surface 31cd is a plane extending along the X and Z directions. The fourth side surface 31cd spans between the edge 31ad of the first surface 31a and the edge 31bd of the second surface 31b.

[0027] 3, the following describes the structure of the package substrate 31. The package substrate 31 includes, for example, an insulating base material 41, a conductive pattern 42, and a solder resist layer 43.

[0028] (insulating substrate) The insulating base material 41 is an insulating base material that forms the base of the package substrate 31. The insulating base material 41 is an insulating hard member made of an insulating material such as glass epoxy resin or polyimide.

[0029] (Conductive pattern) The conductive pattern 42 is a conductive portion provided on the insulating base material 41. The conductive pattern 42 is made of, for example, a copper material. The conductive pattern 42 includes, for example, a plurality of pads 51, a plurality of conductive lines 52, and a conductive layer 53.

[0030] The pads 51 are pads for electrical connection and are exposed on the first surface 31a of the package substrate 31. A solder ball 35 is mounted on each pad 51.

[0031] The plurality of conductive lines 52 are conductive connection portions provided on the insulating substrate 41. The conductive lines 52 are provided inside or on the surface of the insulating substrate 41. Each conductive line 52 extends linearly. Some conductive lines 52a included in the plurality of conductive lines 52 connect, for example, the electronic component 32 and the pad 51. Another one or more (e.g., a plurality) conductive lines 52b included in the plurality of conductive lines 52 connect the conductive layer 53 and the metal portion 36 (described later). Note that instead of or in addition to the above example, another one or more (e.g., a plurality) conductive lines 52b included in the plurality of conductive lines 52 may connect the electronic component 32 and the metal portion 36 (described later).

[0032] At least a portion of the conductive layer 53 extends in a planar shape. The conductive layer 53 is, for example, a planar portion along the X direction and the Y direction. The conductive layer 53 faces the electronic component 32 in the Z direction. In this embodiment, the conductive layer 53 is provided on the second surface 31b of the package substrate 31. The conductive layer 53 is in direct contact with, for example, the electronic component 32. This thermally connects the conductive layer 53 to the electronic component 32. The conductive layer 53 may also be thermally connected to the electronic component 32 via a thermally conductive member (such as a thermally conductive sheet or thermally conductive grease).

[0033] (solder resist) The solder resist layer 43 is a protective layer provided on the first surface 31a of the package substrate 31. The solder resist layer 43 is provided, for example, on the first surface 31a of the package substrate 31 at a position away from the pads 51 and the metal portion 36. The solder resist layer 43 may cover the edges of the pads 51 and / or the edges of the metal portion 36.

[0034] <3.2 Electronic Components> The electronic component 32 is mounted on the second surface 31b of the package substrate 31. The electronic component 32 is, for example, a semiconductor component. The electronic component 32 may be, for example, a semiconductor component including an SoC (System on a Chip) such as a controller, a semiconductor memory chip, or other semiconductor components. The "semiconductor memory chip" is, for example, a NAND-type semiconductor memory chip, but may also be a DRAM (Dynamic Random Access Memory)-type semiconductor memory chip or other types of semiconductor memory chip.

[0035] <3.3 Bonding wire> The bonding wires 33 are electrical connection parts that connect the second surface 31b of the package substrate 31 and the electronic component 32. Note that the electronic component 32 is not limited to an electronic component that is electrically connected to the package substrate 31 via the bonding wires 33. The electronic component 32 may be mounted on the second surface 31b of the package substrate 31 with a plurality of solder balls facing the second surface 31b of the package substrate 31.

[0036] <3.4 Sealing member> The sealing member 34 is an insulating portion that covers the electronic components 32 from the +Z direction side. In this embodiment, the sealing member 34 covers the electronic components 32 and the bonding wires 33 from the +Z direction side. The sealing member 34 is, for example, a molded resin. The sealing member 34 is provided on the second surface 31b of the package substrate 31 and covers the second surface 31b of the package substrate 31 when viewed from the Z direction. Note that the sealing member 34 does not necessarily have to be provided, as in a modified example described later.

[0037] <3.5 solder ball> The multiple solder balls 35 are electrical connection portions that connect the semiconductor device 30 and the substrate 10. The multiple solder balls 35 are provided on the first surface 31a of the package substrate 31 and exposed to the outside of the semiconductor device 30. Each solder ball 35 is connected to a pad 51 exposed on the first surface 31a of the package substrate 31. The multiple solder balls 35 are arranged, for example, in a grid pattern along the X and Y directions. In this embodiment, the multiple solder balls 35 are BGA (Ball Grid Array) type solder joint portions. The solder balls 35 are an example of a "joint portion." The multiple solder balls 35 include multiple solder balls 35S that are arranged on the outermost periphery of the multiple solder balls 35 (see FIG. 4).

[0038] FIG. 5 is a bottom view showing the back surface of the semiconductor device 30. As shown in FIG. The first surface 31a of the package substrate 31 has four regions A1 to A4 in which no solder balls 35 are arranged. The first region A1 is arranged along the edge 31aa of the first surface 31a. The first region A1 is arranged corresponding to the center of the edge 31aa of the first surface 31a in the Y direction. The first region A1 is located between the multiple solder balls 35 (e.g., multiple solder balls 35S) in the Y direction. The second region A2 is arranged along the edge 31ab of the first surface 31a. The second region A2 is arranged corresponding to the center of the edge 31ab of the first surface 31a in the Y direction. The second region A2 is located between the multiple solder balls 35 (e.g., multiple solder balls 35S) in the Y direction.

[0039] The third region A3 is arranged along the edge 31ac of the first surface 31a. The third region A3 is arranged corresponding to the center of the edge 31ac of the first surface 31a in the X direction. The third region A3 is located between the multiple solder balls 35 (e.g., multiple solder balls 35S) in the X direction. The fourth region A4 is arranged along the edge 31ad of the first surface 31a. The fourth region A4 is arranged corresponding to the center of the edge 31ad of the first surface 31a in the X direction. The fourth region A2 is located between the multiple solder balls 35 (e.g., multiple solder balls 35S) in the X direction.

[0040] <3.6 Metal parts> Returning to FIG. 3, the metal portions 36 will be described. A plurality of metal portions 36 are provided on the package substrate 31. The metal portions 36 are provided in the expectation of achieving one or more of the following functions: (1) improving the self-alignment effect of the semiconductor device 30 in the reflow process, (2) improving component connection strength, and (3) improving heat dissipation. Note that the metal portions 36 may also be provided in the expectation of achieving a function different from the above functions.

[0041] 3, each metal part 36 has, for example, a first horizontal part 61, an upright part 62, and a second horizontal part 63. The first horizontal part 61, the upright part 62, and the second horizontal part 63 are, for example, connected to one another. Note that the expressions "horizontal part" and "upright part" are used for convenience of explanation and do not limit the position or shape of the metal part 36. Furthermore, the second horizontal part 63 may be omitted.

[0042] The first horizontal portion 61 extends along the first surface 31a of the package substrate 31. The first horizontal portion 61 is a flat portion facing the -Z direction. The first horizontal portion 61 is aligned with the X and Y directions. The first horizontal portion 61 is exposed to the outside of the semiconductor device 30. The first horizontal portion 61 is provided adjacent to a portion of the peripheral surface 31c of the package substrate 31. The first horizontal portion 61 extends from a rising portion 62 (described later) toward the center of the first surface 31a. In this embodiment, the first horizontal portion 61 includes a main body portion 37 provided on the surface of the package substrate 31 and a surface layer portion 38 laminated on the main body portion 37, as described later. The phrase "the first horizontal portion 61 is exposed to the outside of the semiconductor device 30" is not limited to the case where the main body portion 37 of the first horizontal portion 61 is exposed to the outside, but may also include the case where the surface layer portion 38 of the first horizontal portion 61 is exposed to the outside.

[0043] When viewed from the Z direction, the area of ​​the first horizontal portion 61 is larger than the area of ​​any one solder ball 35 (for example, the first solder ball 35S1) included in the multiple solder balls 35 (see FIG. 5). The solder ball 35S1 is an example of a "first bonding portion." In this embodiment, the area of ​​the first horizontal portion 61 is larger than the sum of the areas of any two solder balls 35. Note that the "area of ​​the solder ball" refers to the area of ​​the maximum diameter portion of the solder ball.

[0044] The upright portion 62 stands up in the +Z direction from an end of the first horizontal portion 61. The upright portion 62 extends in the Z direction along the peripheral surface 31c of the package substrate 31. The upright portion 62 is provided, for example, over the entire length of the thickness of the package substrate 31 in the Z direction (the entire length of the peripheral surface 31c in the Z direction). The upright portion 62 is exposed to the outside of the semiconductor device 30. Here, in this embodiment, the upright portion 62 has a main body portion 37 provided on the surface of the package substrate 31 and a surface layer portion 38 laminated on the main body portion 37, as will be described later. The phrase "the upright portion 62 is exposed to the outside of the semiconductor device 30" is not limited to the case where the main body portion 37 of the upright portion 62 is exposed to the outside, but may also include the case where the surface layer portion 38 of the upright portion 62 is exposed to the outside.

[0045] The second horizontal portion 63 extends along the second surface 31b of the package substrate 31. The second horizontal portion 63 is a flat portion facing the +Z direction. The second horizontal portion 63 extends along the X and Y directions. The second horizontal portion 63 is provided adjacent to a part of the peripheral surface 31c of the package substrate 31. The second horizontal portion 63 extends from the end of the upright portion 62 on the +Z direction side toward the center of the second surface 31b. The second horizontal portion 63 is covered from the +Z direction side by the sealing member 34.

[0046] When viewed from the Z direction, the area of ​​the second horizontal portion 63 is larger than the area of ​​any one solder ball 35 (for example, the first solder ball 35S1) included in the multiple solder balls 35. In this embodiment, the area of ​​the second horizontal portion 63 is larger than the total area of ​​any two solder balls 35.

[0047] As shown in FIG. 4, in this embodiment, the multiple metal portions 36 include first to fourth metal portions 36A to 36D. The first to fourth metal portions 36A to 36D are arranged spaced apart from one another. Each of the first to fourth metal portions 36A to 36D is connected to the above-mentioned conductive layer 53 via, for example, a conductive line 52b (see FIG. 3). For example, the second horizontal portion 63 of each of the first to fourth metal portions 36A to 36D is connected to the conductive layer 53 via the conductive line 52b. Note that instead of or in addition to the above example, the first horizontal portion 61 or the upright portion 62 of the first to fourth metal portions 36A to 36D may be connected to the conductive layer 53 via the conductive line 52b.

[0048] (1st metal part) The first metal portion 36A is provided corresponding to the center in the Y direction of the edge 31aa of the first surface 31a. For example, the first horizontal portion 61 of the first metal portion 36A is disposed corresponding to the center in the Y direction of the edge 31aa of the first surface 31a, and is provided in the region A1. The first horizontal portion 61 of the first metal portion 36A is an example of a "first portion."

[0049] Here, the multiple solder balls 35 provided on the semiconductor device 30 include a second solder ball 35S2 adjacent to the first solder ball 35S1 in the Y direction. The second solder ball 35S2 is an example of a "second bonding portion." In this embodiment, the length L1 in the Y direction of the first horizontal portion 61 of the first metal portion 36A is greater than the center-to-center distance L2 between the first solder ball 35S1 and the second solder ball 35S2 (see FIG. 5). The first horizontal portion 61 of each of the second to fourth metal portions 36B to 36D also has the same area as the first horizontal portion 61 of the first metal portion 36A.

[0050] The first solder ball 35S1 described above is, for example, the solder ball 35 closest to the edge 31aa of the package substrate 31 among the multiple solder balls 35. The distance L3 in the X direction between the center C of the package substrate 31 and the first horizontal portion 61 of the first metal portion 36A is equal to or less than the distance L4 in the X direction between the center C of the package substrate 31 and the first solder ball 35S1 (see FIG. 5). In this embodiment, the distance L3 is smaller than the distance L4. In this embodiment, a portion of the first horizontal portion 61 of the first metal portion 36A is located closer to the -X direction than the outermost solder balls 35S.

[0051] The upright portion 62 of the first metal portion 36A is provided in the center of the first side surface 31ca of the package substrate 31 in the Y direction. The upright portion 62 of the first metal portion 36A extends in the Z direction along the first side surface 31ca. The upright portion 62 of the first metal portion 36A is a flat portion facing the +X direction. The upright portion 62 of the first metal portion 36A extends along the Y direction and the Z direction. The upright portion 62 of the first metal portion 36A is provided, for example, over the entire length of the first side surface 31ca in the Z direction. The upright portion 62 of the first metal portion 36A extends between the edge 31aa of the first surface 31a and the edge 31ba of the second surface 31b. The length in the Y direction of the upright portion 62 of the first metal portion 36A is, for example, the same as the length in the Y direction of the first horizontal portion 61 of the first metal portion 36A. The upright portion 62 of the first metal portion 36A is an example of the "second portion."

[0052] The second horizontal portion 63 of the first metal portion 36A is provided corresponding to the center in the Y direction of the edge 31ba of the second surface 31b (see FIG. 3). The length in the Y direction of the second horizontal portion 63 of the first metal portion 36A is, for example, the same as the length in the Y direction of the first horizontal portion 61 of the first metal portion 36A.

[0053] (2nd metal part) The second metal portion 36B is provided corresponding to the center in the Y direction of the edge 31ab of the first surface 31a. For example, the first horizontal portion 61 of the second metal portion 36B is disposed corresponding to the center in the Y direction of the edge 31ab of the first surface 31a, and is provided in the region A2. The first horizontal portion 61 of the second metal portion 36B is an example of the "third portion."

[0054] In this embodiment, the length L1 in the Y direction of the first horizontal portion 61 of the second metal portion 36B is greater than the center-to-center distance L2 between the first solder ball 35S1 and the second solder ball 35S2. In this embodiment, a part of the first horizontal portion 61 of the second metal portion 36B is located on the +X direction side of the outermost solder ball 35S.

[0055] The upright portion 62 of the second metal portion 36B is provided in the center of the second side surface 31cb of the package substrate 31 in the Y direction. The upright portion 62 of the second metal portion 36B extends in the Z direction along the second side surface 31cb. The upright portion 62 of the second metal portion 36B is a flat portion facing the -X direction. The upright portion 62 of the second metal portion 36B extends along the Y direction and the Z direction. The upright portion 62 of the second metal portion 36B is provided, for example, over the entire length of the second side surface 31cb in the Z direction. The upright portion 62 of the second metal portion 36B extends between the edge 31ab of the first surface 31a and the edge 31bb of the second surface 31b. The length in the Y direction of the upright portion 62 of the second metal portion 36B is, for example, the same as the length in the Y direction of the first horizontal portion 61 of the second metal portion 36B. The upright portion 62 of the second metal portion 36B is an example of the "fourth portion."

[0056] The second horizontal portion 63 of the second metal portion 36B is provided corresponding to the center in the Y direction of the edge 31bb of the second surface 31b. The length in the Y direction of the second horizontal portion 63 of the second metal portion 36B is, for example, the same as the length in the Y direction of the first horizontal portion 61 of the second metal portion 36B.

[0057] (3rd metal part) The third metal portion 36C is provided corresponding to the center in the X direction of the edge 31ac of the first surface 31a. For example, the first horizontal portion 61 of the third metal portion 36C is disposed corresponding to the center in the X direction of the edge 31ac of the first surface 31a, and is provided in the region A3.

[0058] In this embodiment, the length L1 in the X direction of the first horizontal portion 61 of the third metal portion 36C is greater than the center-to-center distance L2 between the first solder ball 35S1 and the second solder ball 35S2. In this embodiment, a part of the first horizontal portion 61 of the third metal portion 36C is located on the -Y direction side of the outermost solder ball 35S.

[0059] The upright portion 62 of the third metal portion 36C is provided in the center of the third side surface 31cc of the package substrate 31 in the X direction. The upright portion 62 of the third metal portion 36C extends in the Z direction along the third side surface 31cc. The upright portion 62 of the third metal portion 36C is a flat portion facing the +Y direction. The upright portion 62 of the third metal portion 36C extends along the X and Z directions. For example, the upright portion 62 of the third metal portion 36C is provided over the entire length of the third side surface 31cc in the Z direction. The upright portion 62 of the third metal portion 36C extends between the edge 31ac of the first surface 31a and the edge 31bc of the second surface 31b. The length in the X direction of the upright portion 62 of the third metal portion 36C is, for example, the same as the length in the X direction of the first horizontal portion 61 of the third metal portion 36C.

[0060] The second horizontal portion 63 of the third metal portion 36C is provided corresponding to the center in the Y direction of the edge 31bc of the second surface 31b. The length in the X direction of the second horizontal portion 63 of the third metal portion 36C is, for example, the same as the length in the X direction of the first horizontal portion 61 of the third metal portion 36C.

[0061] (4th metal part) The fourth metal portion 36D is provided corresponding to the center in the X direction of the edge 31ad of the first surface 31a. For example, the first horizontal portion 61 of the fourth metal portion 36D is disposed corresponding to the center in the X direction of the edge 31ad of the first surface 31a, and is provided in the region A4.

[0062] In this embodiment, the length L1 in the X direction of the first horizontal portion 61 of the fourth metal portion 36D is greater than the center-to-center distance L2 between the first solder ball 35S1 and the second solder ball 35S2. In this embodiment, a part of the first horizontal portion 61 of the fourth metal portion 36D is located on the +Y direction side of the outermost solder ball 35S.

[0063] The upright portion 62 of the fourth metal portion 36D is provided in the center of the fourth side surface 31cd of the package substrate 31 in the X direction. The upright portion 62 of the fourth metal portion 36D extends in the Z direction along the fourth side surface 31cd. The upright portion 62 of the fourth metal portion 36D is a flat portion facing the -Y direction. The upright portion 62 of the fourth metal portion 36D extends along the X direction and the Z direction. For example, the upright portion 62 of the fourth metal portion 36D is provided over the entire length of the fourth side surface 31cd in the Z direction. The upright portion 62 of the fourth metal portion 36D extends between the edge 31ad of the first surface 31a and the edge 31bd of the second surface 31b. The length in the X direction of the upright portion 62 of the fourth metal portion 36D is, for example, the same as the length in the X direction of the first horizontal portion 61 of the fourth metal portion 36D.

[0064] The second horizontal portion 63 of the fourth metal portion 36D is provided corresponding to the center in the X direction of the edge 31bd of the second surface 31b. Similarly, the length in the X direction of the second horizontal portion 63 of the fourth metal portion 36D is the same as the length in the X direction of the first horizontal portion 61 of the fourth metal portion 36D, for example.

[0065] As shown in FIG. 5 , in this embodiment, each of the first to fourth side surfaces 31ca to 31cd of the package substrate 31 has a recess 65. The recess 65 is provided at a position corresponding to the upright portion 62 of each metal portion 36. The recess 65 of the first side surface 31ca is formed by recessing a portion of the first side surface 31ca toward the center (−X direction side) of the package substrate 31. The recess 65 of the second side surface 31cb is formed by recessing a portion of the second side surface 31cb toward the center (+X direction side) of the package substrate 31. The recess 65 of the third side surface 31cc is formed by recessing a portion of the third side surface 31cc toward the center (−Y direction side) of the package substrate 31. The recess 65 of the fourth side surface 31cd is formed by recessing a portion of the fourth side surface 31cd toward the center (+X direction side) of the package substrate 31. The recess 65 is provided over the entire thickness of the package substrate 31 in the Z direction.

[0066] In this embodiment, the upstanding portion 62 of the metal portion 36 is formed by forming a through-hole penetrating in the Z direction at the boundary between two adjacent semiconductor devices 30 in a state before the semiconductor devices 30 are singulated during the manufacturing process (when the semiconductor devices 30 are connected), and then forming a metal layer (e.g., a copper layer) inside the through-hole using a process similar to the process of forming a through-hole. When this manufacturing method is used, the above-mentioned depression 65 remains in the singulated semiconductor device 30. The presence of such a depression 65 makes it difficult for the solder fillet 70, described below, to spread outside the depression 65, and the shape of the solder fillet 70 between the metal portion 36 and the substrate 10 is more likely to be stable. Therefore, the presence of such a depression 65 can further increase the connection strength between the metal portion 36 and the solder fillet 70.

[0067] <3.7 Surface area> 3, in this embodiment, a surface layer 38 is provided on the surface of the pad 51 and the metal portion 36 as part of the pad 51 or the metal portion 36. For example, each of the pad 51 and the metal portion 36 has a main body portion 37 provided on the surface of the package substrate 31 and a surface layer portion 38 laminated on the main body portion 37.

[0068] The main body portion 37 is formed of a first material, such as copper. The surface layer portion 38 is formed of a material different from the first material. The surface layer portion 38 is formed to improve solder wettability, enhance rust resistance, or achieve other functions. The surface layer portion 38 is formed, for example, by surface treatment or plating. One example of the surface layer portion 38 is a preflux layer formed by surface treatment. Another example of the surface layer portion 38 is a plating layer formed by electrolytic plating. The plating layer may include, for example, a first layer formed of nickel (Ni) and a second layer formed on the first layer of gold (Au). Note that the material of the surface layer portion 38 is not limited to the above example. In this embodiment, the surface layer portion 38 is formed continuously with the first horizontal portion 61, the upright portion 62, and the second horizontal portion 63 of the metal portion 36.

[0069] <3. Solder fillet> 1, the solder fillet 70 will be described. The solder fillet 70 is provided between the metal portion 36 of the semiconductor device 30 and the pad 22 of the substrate 10. The solder fillet 70 connects the metal portion 36 of the semiconductor device 30 and the pad 22 of the substrate 10.

[0070] In this embodiment, the solder fillet 70 has a first portion 71 connected to the first horizontal portion 61 of the metal portion 36 of the semiconductor device 30, and a second portion 72 connected to the upright portion 62 of the metal portion 36 of the semiconductor device 30. The second portion 72 is adjacent to the upright portion 62 in the horizontal direction. In this embodiment, the solder fillet 70 is connected across the first portion 22a and the second portion 22b of the pad 22 of the substrate 10.

[0071] <4. Method of manufacturing the board unit> Next, a method for manufacturing the substrate unit 1 will be described. 6 is a cross-sectional view showing a manufacturing method of the substrate unit 1. In this embodiment, first, solder S is supplied to the pads 21 and 22 of the substrate 10 (see (a) in FIG. 6). The solder S is supplied by, for example, but not limited to, screen printing. Next, the semiconductor device 30 is placed on the substrate 10 to which the solder S has been supplied.

[0072] Next, a reflow process is performed with the semiconductor device 30 placed on the substrate 10. At this time, the solder S supplied to the pad 22 forms a solder fillet 70 that connects the first portion 61 and the second portion 62 of the metal portion 36 of the semiconductor device 30 (see (b) in FIG. 6). Therefore, if there is misalignment between the substrate 10 and the semiconductor device 30 when they are placed, a self-alignment effect occurs due to the surface tension (solder condensation force) of the solder fillet 70 and the solder ball 35.

[0073] As a result, the semiconductor device moves to the correct position (see (c) in FIG. 6). This reduces the positional deviation between the substrate 10 and the semiconductor device 30 when they are placed (for example, eliminates the positional deviation). This completes the substrate unit 1.

[0074] <5. Heat dissipation effects> Next, the heat dissipation function of the board unit 1 will be described. FIG. 7 is a cross-sectional view illustrating the heat dissipation function of the board unit 1. The white arrows in FIG. 7 indicate the movement of heat. Heat generated by the electronic component 32 is transferred from the electronic component 32 to the conductive layer 53. The heat transferred to the conductive layer 53 is transferred to the metal portion 36 via the conductive line 52b. The heat transferred to the metal portion 36 is transferred to the pad 22 of the board 10 via the solder fillet 70. The heat transferred to the pad 22 is transferred to the conductive layer 24 via the conductive line 23. The heat transferred to the conductive layer 24 is diffused within the board 10 and released from the surface of the board 10.

[0075] <6. Advantages> As a comparative example, consider a semiconductor device 30 that does not have a metal portion 36. In this comparative example, the absence of a solder fillet 70 can lead to the following issues: (1) Without the solder fillet 70, only the self-alignment effect due to the surface tension of the solder balls 35 occurs. In this case, if there is a significant misalignment between the substrate 10 and the semiconductor device 30 during placement, the self-alignment effect due to the surface tension of the solder balls 35 alone may not be sufficient to resolve the misalignment due to insufficient solder condensation force. As a result, the reflow process may be completed with the substrate 10 and the semiconductor device 30 still misaligned, making it difficult to improve manufacturing yield. (2) In the substrate unit 1, if there is misalignment between the substrate 10 and the semiconductor device 30, necked portions may occur in the solder balls 35. If necked portions occur in the solder balls 35, long-term stress (such as physical impact, residual stress, or moist heat) can cause cracks or solder peeling, potentially resulting in product defects. (3) It is difficult to ensure sufficient heat dissipation, which may result in a large temperature rise in the semiconductor device 30. If a large temperature rise occurs in the semiconductor device 30, it may lead to a decrease in the function and / or lifespan of the semiconductor device 30.

[0076] On the other hand, the semiconductor device 30 of this embodiment has a package substrate 31, an electronic component 32, a plurality of solder balls 35, and a first metal portion 36A. The first metal portion 36A includes a first horizontal portion 61 extending along a first surface 31a of the package substrate 31 and an upright portion 62 extending along a first side surface 31ca of the package substrate 31. The area of ​​the first metal portion 36A when viewed from the Z direction is larger than that of a first solder ball 35S1 included in the plurality of solder balls 35.

[0077] This configuration can be expected to achieve one or more of the following effects (1) to (3). Therefore, defects in the semiconductor device 30 can be suppressed. (1) By providing the first metal portion 36A, a solder fillet 70 connected to the first metal portion 36A can be formed. The presence of the solder fillet 70 can be expected to provide a self-alignment effect due to the surface tension of the solder fillet 70 and the solder ball 35. In this case, even if there is a certain degree of misalignment between the substrate 10 and the semiconductor device 30 during placement, the self-alignment effect is large, making it easy to eliminate the misalignment. As a result, the manufacturing yield can be improved. (2) By forming the solder fillet 70 across the first side surface 31ca of the semiconductor device 30, the bonding strength between the substrate 10 and the semiconductor device 30 is improved compared to when the solder fillet is connected to a metal portion provided on the first surface 31a of the semiconductor device 30. Therefore, even when stress (such as physical impact, residual stress, or moist heat) is applied over a long period of time, cracks and solder peeling are less likely to progress, reducing the likelihood of product defects. (3) The first metal portion 36A and the solder fillet 70 of the semiconductor device 30 function as heat dissipation portions, thereby improving heat dissipation. This makes it possible to prevent a large temperature rise in the semiconductor device 30.

[0078] In this embodiment, the first horizontal portion 61 and the standing portion 62 of the first metal portion 36A are connected. With this configuration, the solder S easily spreads from the first horizontal portion 61 to the standing portion 62, and the solder fillet 70 is easily formed. This further facilitates eliminating misalignment between the substrate 10 and the semiconductor device 30 when they are placed on each other, for example.

[0079] In this embodiment, the upright portion 62 of the first metal portion 36A extends from the edge 31aa of the first surface 31a to the edge ba of the second surface 31b of the package substrate 31. This configuration facilitates bonding between the solder fillet 70 and the upright portion 62 of the metal portion 36A over the entire length of the first side surface 31ca of the package substrate 31 in the Z direction. This further facilitates eliminating misalignment between the substrate 10 and the semiconductor device 30 when they are placed on each other. Furthermore, by making it easier to form a larger solder fillet 70, the bonding strength and heat dissipation between the substrate 10 and the semiconductor device 30 can be further improved.

[0080] As a comparative example, consider a semiconductor device 30 in which the metal portion 36 is disposed at a corner of the package substrate 31. In this comparative example, the metal portion 36 is disposed at the corner of the package substrate 31 where the solder balls 35 are disposed, which may result in an insufficient area for the metal portion 36. In contrast, in this embodiment, the first metal portion 36A is provided corresponding to the center of the edge 31aa of the first surface 31a of the package substrate 31 in the Y direction. This configuration makes it easier to ensure a larger area for the metal portion 36 compared to the comparative example. This makes it easier to form a larger solder fillet 70, further reducing misalignment between the substrate 10 and the semiconductor device 30 during placement. Furthermore, by making it easier to form a larger solder fillet 70, the bonding strength and heat dissipation between the substrate 10 and the semiconductor device 30 can be further improved.

[0081] In this embodiment, the first metal portion 36A includes a second horizontal portion 63 that is connected to the upright portion 62 and extends along the second surface 31b of the package substrate 31. With this configuration, heat from the electronic component 32 is more easily conducted to the first metal portion 36A via the second horizontal portion 63. This further improves the heat dissipation performance of the semiconductor device 30.

[0082] In this embodiment, the package substrate 31 has a conductive layer 53, at least a portion of which extends in a planar shape. The first metal portion 36A is connected to the conductive layer 53. With this configuration, heat from the electronic component 32 is more easily transferred to the first metal portion 36A via the conductive layer 53. This further improves the heat dissipation performance of the semiconductor device 30.

[0083] In this embodiment, the distance L3 in the X direction between the center C of the package substrate 31 and the first metal portion 36A is equal to or less than the distance L4 in the X direction between the center C of the package substrate 31 and the first solder ball 35S1. This configuration makes it easier to ensure a large area for the metal portion 36. This makes it easier to form a larger solder fillet 70, further reducing misalignment between the substrate 10 and the semiconductor device 30 when they are placed on each other. Furthermore, by making it easier to form a larger solder fillet 70, the bond strength and heat dissipation between the substrate 10 and the semiconductor device 30 can be further improved.

[0084] In this embodiment, the semiconductor device 30 further includes a second metal portion 36B spaced apart from the first metal portion 36A. The second metal portion 36B includes a first horizontal portion 61 extending along the first surface 31a of the package substrate 31 and an upright portion 62 extending along the second side surface 31cb of the package substrate 31. The area of ​​the second metal portion 36B, as viewed in the Z direction, is larger than that of the first solder ball 35S1. With this configuration, the presence of the second metal portion 36B spaced apart from the first metal portion 36A forms multiple solder fillets 70. This further reduces misalignment between the substrate 10 and the semiconductor device 30 during placement, for example. Furthermore, the first metal portion 36A, the second metal portion 36B, and the multiple solder fillets 70 function as a joint, further improving the bonding strength between the substrate 10 and the semiconductor device 30. Furthermore, the first metal portion 36A, the second metal portion 36B, and the plurality of solder fillets 70 function as heat dissipation portions, so that the heat dissipation properties of the semiconductor device 30 can be further improved.

[0085] <6. Modifications of the manufacturing method> Next, a description will be given of modified examples of the method for manufacturing the substrate unit 1. Note that in each modified example, the configuration other than that described below is the same as that of the first embodiment.

[0086] FIG. 8 is a cross-sectional view illustrating matters related to the manufacture of the substrate unit 1. As shown in FIG. 8, solder balls 35 are attached to pads 51 of the semiconductor device 30. On the other hand, solder balls 35 are not attached to metal portions 36 of the semiconductor device 30. Therefore, when the height of the solder S supplied to pads 21 of the substrate 10 is the same as the height of the solder S supplied to pads 22 of the substrate 10, the following situation may occur. That is, when the solder S supplied to pads 21 of the substrate 10 and the solder balls 35 of the semiconductor device 30 are in contact with each other, a gap g remains between the solder S supplied to pads 22 of the substrate 10 and the metal portions 36 of the semiconductor device 30. The following modified examples are intended to allow the substrate unit 1 to be manufactured satisfactorily even when such a gap g may occur.

[0087] <6.1 First Modification> 9 is a cross-sectional view showing a manufacturing method of a substrate unit 1 of a first modified example. In this modified example, a mask M for supplying solder S to the pads 21 and 22 of the substrate 10 by screen printing is provided on the substrate 10 (see (a) in FIG. 9). The mask M has a plurality of openings Mh1 facing the plurality of pads 21 and a plurality of openings Mh2 (openings Mh2A, Mh2B) facing the plurality of pads 22 (pads 22A, 22B).

[0088] The opening Mh2 has a shape that extends in a direction away from the center of the semiconductor device 30 compared to the pad 22. For example, a pad 22A that is arranged on the +X direction side of the center of the semiconductor device 30 and an opening Mh2A that corresponds to the pad 22A will be described. In this case, the X direction position of an edge e11a on the -X direction side of the opening Mh2A is the same as the X direction position of an edge e21a on the -X direction side of the pad 22A. On the other hand, the X direction position of an edge e12a on the +X direction side of the opening Mh2A is located further toward the +X direction than the X direction position of an edge e22a on the +X direction side of the pad 22A.

[0089] Similarly, a pad 22B disposed on the −X direction side with respect to the center of the semiconductor device 30 and an opening Mh2B corresponding to the pad 22B will be described. In this case, the X direction position of an edge e11b on the +X direction side of the opening Mh2B is the same as the X direction position of an edge e21b on the +X direction side of the pad 22B. Meanwhile, the X direction position of an edge e12b on the −X direction side of the opening Mh2B is located further toward the −X direction than the X direction position of an edge e22b on the −X direction side of the pad 22B. As such, the opening Mh2 has a shape that extends in a direction away from the center of the semiconductor device 30 compared to the pad 22. This shape is similar for a pair of a pad 22 and an opening Mh2 disposed on the +Y direction side with respect to the center of the semiconductor device 30, and also for a pair of a pad 22 and an opening Mh2 disposed on the −Y direction side with respect to the center of the semiconductor device 30.

[0090] Next, the solder S is supplied by screen printing using the above-described mask M. As a result, the solder S is supplied onto the pad 21, and the solder S is supplied onto the pad 22. In this modification, the opening Mh2 has a shape that extends in a direction away from the center of the semiconductor device 30 compared to the pad 22. Therefore, the solder S is supplied in a shape that is farther away from the center of the semiconductor device 30 than the pad 22. A portion of the solder S is located on the solder resist layer 13, away from the pad 22. In this state, the semiconductor device 30 is placed on the substrate 10 (see (b) in FIG. 9).

[0091] Next, a reflow process is performed with the semiconductor device 30 placed on the substrate 10. At this time, the solder S supplied to the pad 22 is heated and becomes fluid, and is collected above the pad 22 by a condensation force P, increasing the height of the solder S above the pad 22. As a result, even when the gap g described above occurs, a solder fillet 70 is successfully formed, connecting the first portion 61 and the second portion 62 of the metal portion 36 of the semiconductor device 30 (see (c) in FIG. 9).

[0092] <6.2 Second Modification> FIG. 10 is a cross-sectional view showing a manufacturing method of a substrate unit 1 according to a second modified example. In this modified example, after placing the semiconductor device 30 on the substrate 10, the mounting tool holding the semiconductor device 30 is adjusted to press the semiconductor device 30 toward the substrate 10 (see the hollow arrow in (a) of FIG. 10). This brings the metal portion 36 of the semiconductor device 30 into contact with the solder S on the pad 22 of the substrate 10 (see (b) of FIG. 10). Then, the reflow process is performed with the metal portion 36 of the semiconductor device 30 in contact with the solder S on the pad 22 of the substrate 10. With this configuration, even if the gap g occurs, a solder fillet 70 is successfully formed, connecting the first portion 61 and the second portion 62 of the metal portion 36 of the semiconductor device 30.

[0093] <6.3 Third Modification> 11 is a cross-sectional view showing a manufacturing method of a substrate unit 1 according to a third modified example. In this modified example, after supplying solder S to pads 21 and 22 by screen printing, additional solder S is supplied to pad 22 using a dispenser DS (FIG. 11(a)). Then, with solder S additionally supplied to pad 22, semiconductor device 30 is placed on substrate 10 (FIG. 11(b)). With this configuration, even if the gap g occurs, solder fillet 70 connecting first portion 61 and second portion 62 of metal portion 36 of semiconductor device 30 is successfully formed.

[0094] <6.4 Fourth Modification> 12 is a cross-sectional view showing a manufacturing method of a substrate unit 1 according to a fourth modified example. In this modified example, after the semiconductor device 30 is placed on the substrate 10, additional solder S is supplied to the pads 22 using a dispenser DS. For example, the solder S is additionally supplied to the second portions 22b of the pads 22. With this configuration, even when the gap g occurs, a solder fillet 70 is successfully formed, connecting the first portion 61 and the second portion 62 of the metal portion 36 of the semiconductor device 30.

[0095] <6.5 Fifth Modification> FIG. 13 is a cross-sectional view showing a manufacturing method of a substrate unit 1 according to a fifth modified example. In this modified example, solder S is supplied to pads 21 and 22 by screen printing, and then additional solder S is supplied to pad 22 using a mounter MT ((a) in FIG. 13). For example, the mounter MT places a block of additional solder S on top of the solder S supplied to pad 22. Then, with the additional solder S supplied to pad 22, the semiconductor device 30 is placed on the substrate 10 ((b) in FIG. 13). With this configuration, even when the gap g occurs, a solder fillet 70 that connects the first portion 61 and the second portion 62 of the metal portion 36 of the semiconductor device 30 is successfully formed.

[0096] <6.6 Sixth Modification> 14 is a cross-sectional view showing a manufacturing method of a substrate unit 1 according to a sixth modified example. In this modified example, after the semiconductor device 30 is placed on the substrate 10, additional solder S is supplied to the pad 22 using a mounter MT. For example, the solder S is additionally supplied to the second portion 22b of the pad 22. For example, the mounter MT places a block of additional solder S on top of the solder S supplied to the pad 22. With this configuration, even when the gap g occurs, a solder fillet 70 that connects the first portion 61 and the second portion 62 of the metal portion 36 of the semiconductor device 30 is successfully formed.

[0097] (Second embodiment) Next, a second embodiment will be described. The second embodiment differs from the first embodiment in that the semiconductor device 30A has two metal parts 36. Note that the configuration other than that described below is the same as that of the first embodiment.

[0098] FIG. 15 is a bottom view showing the back surface of a semiconductor device 30A according to the second embodiment. In this embodiment, the semiconductor device 30A has a first metal portion 36A and a second metal portion 36B. The first metal portion 36A is provided corresponding to the center of the edge 31aa of the package substrate 31. The second metal portion 36B is provided corresponding to the center of the edge 31ab of the package substrate 31. On the other hand, the semiconductor device 30 does not have the third metal portion 36C and the fourth metal portion 36D as in the first embodiment. While this configuration is less effective than the first embodiment, it can improve the structural characteristics of the substrate unit 1, similar to the first embodiment.

[0099] (Third embodiment) Next, a third embodiment will be described. The third embodiment differs from the first embodiment in that the semiconductor device 30B has a heat spreader 81. Note that the configuration other than that described below is the same as that of the first embodiment.

[0100] 16 is a cross-sectional view showing a substrate unit 1B of the third embodiment. The white arrows in Fig. 16 indicate the movement of heat. In this embodiment, the semiconductor device 30B includes a heat spreader 81, a heat conduction member 82, and an adhesive portion 83.

[0101] The heat spreader 81 has a main body 81a and support portions (legs) 81b. The main body 81a faces the electronic components 32 from the +Z direction side. The main body 81a faces the electronic components 32 from the side opposite the package substrate 31. A heat conduction member 82 (e.g., a heat conduction sheet) is disposed between the main body 81a and the electronic components 32. The heat conduction member 82 has elasticity.

[0102] The support portion 81b extends from the main body portion 81a toward the peripheral edge of the package substrate 31. In this embodiment, the support portion 81b faces the second horizontal portion 63 of the metal portion 36 from the +Z direction side. The support portion 81b is connected to the second horizontal portion 63 of the metal portion 36 via the adhesive portion 83. This fixes the support portion 81b to the package substrate 31. With the support portion 81b fixed to the package substrate 31, the heat spreader 81 presses the main body portion 81a toward the electronic component 32. The adhesive portion 83 is formed, for example, of a thermally conductive adhesive sheet or adhesive. Note that instead of the adhesive portion 83, another fixing structure may be provided to fix the support portion 81b of the heat spreader 81 to the second horizontal portion 63 of the metal portion 36.

[0103] In this embodiment, heat generated by the electronic component 32 is transferred to the main body 81a of the heat spreader 81 via the thermally conductive member 82. The heat transferred to the main body 81a of the heat spreader 81 is transferred to the second horizontal portion 63 of the metal portion 36 via the support portion 81b of the heat spreader 81. The heat transferred to the metal portion 36 is transferred to the pad 22 of the substrate 10 via the solder fillet 70. The heat transferred to the pad 22 is transferred to the conductive layer 24 via the conductive line 23. The heat transferred to the conductive layer 24 is dispersed within the substrate 10 and released from the surface of the substrate 10.

[0104] With this configuration, it is possible to improve the prevention of defects in the board unit 1B, as in the first embodiment. Furthermore, according to this embodiment, the heat spreader 81 is provided, which facilitates the transfer of heat from the electronic components 32 to the metal part 36. This further improves the heat dissipation performance of the board unit 1B.

[0105] Several embodiments and modifications have been described above. However, the embodiments and modifications are not limited to the examples described above. For example, multiple embodiments or modifications can be realized by combining them with each other. For example, the shape and arrangement of the metal portion 36 are not limited to the examples described above. The metal portion 36 may be provided at a corner of the package substrate 31. The conductive layer 53 may be omitted. Even without the conductive layer 53, some of the heat generated by the electronic components 32 is transferred to the metal portion 36, thereby improving the heat dissipation performance of the board unit 1 compared to when the metal portion 36 is not present.

[0106] According to at least one embodiment described above, the semiconductor device includes a substrate, an electronic component, a plurality of bonding portions, and a first metal portion. The first metal portion includes a first portion extending along a first surface of the substrate and a second portion extending along a first side surface of the substrate. The area of ​​the first metal portion when viewed from a first direction, which is the thickness direction of the substrate, is larger than that of the first bonding portions included in the plurality of bonding portions. This configuration can improve structural characteristics.

[0107] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, as well as within the scope of the invention described in the claims and their equivalents. [Explanation of symbols]

[0108] 1,1B...Board unit 10...Substrate 30, 30A, 30B...Semiconductor device 31...Package substrate 31a…First page 31b…Second side 31aa…Connection (first connection) 31ab…Connection (third connection) 31ba… Edge (Second Edge) 31bb…En (4th En) 31ca…1st side 31cb…Second side 32...Electronic components 36...Metal part 36A…First metal part 36B…Second metal part 61...1st horizontal section 62...Standing part 63…Second horizontal section 70...Solder fillet

Claims

1. a substrate having a first surface, a second surface located opposite the first surface, and a first side surface extending from a first edge of the first surface to a second edge of the second surface; an electronic component mounted on the second surface; a plurality of bonding portions provided on the first surface, including a first bonding portion; a first metal portion including a first portion extending along the first surface and a second portion extending along the first side surface, the first metal portion having an area larger than that of the first bonding portion when viewed from a first direction that is a thickness direction of the substrate; A semiconductor device comprising:

2. The first portion and the second portion are connected. The semiconductor device according to claim 1 .

3. The second portion spans the first edge and the second edge.

3. The semiconductor device according to claim 1.

4. The first edge extends in a second direction intersecting the first direction, The first metal portion is provided at a position overlapping a center portion of the first edge in the second direction when viewed from the first direction.

3. The semiconductor device according to claim 1.

5. the plurality of joints include a second joint that is adjacent to the first joint in a second direction that intersects with the first direction, a length of the first metal portion in the second direction is greater than a center-to-center distance between the first joint portion and the second joint portion; 3. The semiconductor device according to claim 1.

6. the first metal portion includes a third portion connected to the second portion and extending along the second surface; 3. The semiconductor device according to claim 1.

7. the substrate has a conductive layer at least a portion of which extends in a plane; the first metal portion is connected to the conductive layer; 3. The semiconductor device according to claim 1.

8. the first joint portion is the joint portion closest to the first edge among the plurality of joint portions, a distance in a third direction from the center of the substrate toward the first edge between the center of the substrate and the first metal portion is equal to or less than a distance in the third direction between the center of the substrate and the first bonding portion; 3. The semiconductor device according to claim 1.

9. Further, a second metal portion is provided apart from the first metal portion, the substrate has a second side surface that spans a third edge of the first surface that is different from the first edge and a fourth edge of the second surface that is different from the second edge; the second metal portion includes a third portion extending along the first surface and a fourth portion extending along the second side surface, and has an area when viewed from the first direction larger than that of the first bonding portion; 3. The semiconductor device according to claim 1.

10. A circuit board; a semiconductor device mounted on the circuit board; a solder fillet for fixing the circuit board and the semiconductor device together; Equipped with The circuit board includes: a package substrate having a first surface facing the circuit board, a second surface positioned opposite the first surface, and a first side surface extending from a first edge of the first surface to a second edge of the second surface; an electronic component mounted on the second surface; a plurality of bonding portions provided on the first surface, including a first bonding portion; a first metal portion including a first portion extending along the first surface and a second portion extending along the first side surface, the first metal portion having an area larger than that of the first bonding portion when viewed in a first direction that is a thickness direction of the package substrate; and the solder fillet is in contact with the first portion and the second portion of the first metal portion; Board unit.

11. a semiconductor device having a first substrate, an electronic component, a plurality of bonding portions, and a first metal portion, the first substrate including a first surface, a second surface opposite to the first surface, and a first side surface extending from a first edge of the first surface to a second edge of the second surface, the electronic component being mounted on the second surface, the plurality of bonding portions being provided on the first surface and including first bonding portions, the first metal portion including a first portion extending along the first surface and a second portion extending along the first side surface, and an area of ​​the first metal portion when viewed in a first direction which is a thickness direction of the first substrate being larger than that of the first bonding portions; placing the semiconductor device on a second substrate; forming a solder fillet in contact with the first portion and the second portion of the first metal portion; A method for manufacturing a substrate unit.

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