Device with integrated OLED and phototransistor and method for producing a device with integrated OLED and phototransistor

Abstract

SOLUTION: The present invention discloses a device for integrating an OLED and a phototransistor and an electron beam etching method, in which an OLED and a phototransistor in a series connection relationship are connected by an insulating electron beam photoresist using an electron beam etching process and manufactured on a substrate. The phototransistor includes a gate, a gate insulating layer, a source, a conductive channel, and a drain, and the OLED includes a semi-transparent anode, a hole transport layer, a light-emitting and electron transport layer, a reflective cathode, and a substrate.EFFECT: The present invention realizes the integration of multiple functions of the organic electronic device, has the functions of light emitting display and light sensing at the same time, and realizes the control of the light emitting intensity of the OLED through the intensity of the external light.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to the field of organic electronics, and in particular to an apparatus and electron beam etching method for integrating an OLED and a phototransistor. [Background technology]

[0002] Organic light-emitting diodes (OLEDs) are current-type devices that consist of a multilayer organic thin film structure and emit light when an electric current is applied. As a third-generation display technology, OLEDs are widely used in the display field due to their advantages such as self-luminance, high brightness, wide viewing angle, and flexibility. Therefore, OLEDs need to be closely integrated with other types and functions of devices to achieve better performance, more functions, and more integrated, smaller composite devices.

[0003] Phototransistors are available in two varieties: bipolar transistors and field-effect transistors. They are photoelectric devices with three electrodes whose current is controlled by external light. The magnitude of the current can be controlled according to the intensity of external light, allowing for different operating states. Taking a field-effect transistor as an example, when there is no light, it is in a blocking state and no electrical signal is output. When light is irradiated onto the gate, it is absorbed within the active region of such a device, generating photocarriers. The optical signal is converted into an electrical signal through an internal electrical amplifier, generating a photocurrent gain. The three terminals of a phototransistor operate, making electrical control and synchronization easy.

[0004] In the prior art, the Chinese patent application with application number "CN201510889775.3" and title "Liquid Crystal Display Device and Array Substrate Thereof, and Method for Manufacturing Array Substrate Thereof" integrates an OLED onto an array substrate, but the device only has a single function, i.e., display function, and does not have other functions such as photosensitivity or sensing other signals. The Chinese patent application with application number "CN202110446853.8" and title "Display Panel, Method for Manufacturing Display Panel, and Display Device" integrates a planar light-receiving diode and an OLED onto a display panel, but this device is more complex and does not take into account the difficulty of installing the phototransistor electrodes when a multi-electrode phototransistor and an OLED are integrated. An article in the journal Advanced Optical Materials, Vol. 7, Vol. 8, p. 2200043, reported on the integration of quantum dot light-emitting diodes and phototransistors to achieve the dual functions of photosensitivity and light emission. However, this device is composed of quantum dot light-emitting diodes rather than OLEDs, and has a large number of different functional layers, a complex structure, and requires multiple spin-coatings to introduce the quantum dots, resulting in a complicated process and low yield, making it unsuitable for industrial production. Summary of the Invention [Problem to be solved by the invention]

[0005] Purpose of the invention: In order to solve the problems that the electrode installation of the phototransistor is difficult and the structure is complicated when integrating the OLED with a single OLED function, the present invention proposes an electron beam etching method for integrating the OLED with a phototransistor, and also provides an apparatus for integrating the OLED with a phototransistor. [Means for solving the problem]

[0006] Technical solution: The present invention provides an apparatus for integrating an OLED and a phototransistor, the apparatus comprising: an OLED including a substrate, a reflective cathode located above the substrate, a light-emitting layer and electron transport layer located above the reflective cathode, a hole transport layer located above the light-emitting layer and electron transport layer, a semitransparent anode located above the hole transport layer, and an e-beam photoresist located above the semitransparent anode; and a phototransistor including: a drain located above one side of the semitransparent anode, a source located on one side of the e-beam photoresist, a conductive channel located above the e-beam photoresist, a gate insulating layer located above the conductive channel, and a gate located above the gate insulating layer, the conductive channel being located between the source and drain, and the source being located on the e-beam photoresist on the side away from the drain.

[0007] Preferably, the material of the gate, source and drain is Au, the material of the gate insulating layer is silicon dioxide, and the material of the conductive channel is graphene.

[0008] Preferably, the thickness of the Au of the gate is 30 nm to 80 nm, the thickness of the silicon oxide of the gate insulating layer is 200 nm to 300 nm, the thickness of the Au of the source is 30 nm to 80 nm, the thickness of the Au of the drain is 150 nm to 180 nm, and the graphene of the conductive channel is 1 to 5 layers of graphene atoms with a thickness of 0.3 nm to 1.6 nm.

[0009] Preferably, the material of the electron beam photoresist is polymethyl methacrylate, the thickness of the electron beam photoresist is 120 nm to 160 nm, and the semi-transparent anode is Ag / MoO X The Ag / MoO composite semi-transparent anode XThe thicknesses are 30 nm to 80 nm / 5 nm to 10 nm, the material of the hole transport layer is NPB, and the thickness of the NPB is 30 nm to 60 nm, the material of the light emitting layer and electron transport layer is Alq3, and the thickness of the Alq3 is 30 nm to 60 nm, and the reflective cathode is an Ag / Al alloy, and the Ag and Al metals are mixed at a mass ratio of 75 to 80%:25 to 20%.

[0010] 1. A method for electron beam etching of a device for integrating an OLED and a phototransistor, comprising: (1) cleaning a substrate; Step (2) of fabricating an inverted structure OLED; (3) spin-coating an e-beam photoresist interconnect layer; (4) removing a portion of the electron beam photoresist; and (5) fabricating a phototransistor.

[0011] Preferably, in the specific step of step (1), the substrate is immersed in acetone, isopropanol, and ultrapure water in that order, then immersed in an ultrasonic water bath for 20 minutes for cleaning, and then removed and dried with nitrogen gas.

[0012] Preferably, step (2) comprises: The substrate is placed in the sample chamber of the deposition machine with one side of the film to be deposited facing down, and the substrate is fixed to the sample tray (2.1). Place a reflective cathode material, a light-emitting layer / electron transport layer material, a hole transport layer material, and a semi-transparent anode material on each evaporation source of the evaporation machine (2.2). Start the mechanical pump to draw a vacuum in advance and control the vacuum level in the sample chamber to 10 Pa or less (2.3). Start the molecular pump and pump 5 x 10 -4 When the pressure is reduced to below 2.4 Pa, The materials on the evaporation source are heated in order to deposit a reflective cathode material, a light-emitting layer / electron transport layer material, a hole transport layer material, and a semi-transparent anode material in this order (2.5). After the semi-transparent anode material is deposited, the sample chamber of the deposition machine is filled with high-purity nitrogen gas, and after atmospheric pressure is reached, the fabricated sample is removed (2.6).

[0013] Preferably, step (3) comprises: Step (3.1) of placing the sample prepared in step (2) in a spin coater, placing one side of the film to be spin coated upward, and starting the mechanical pump to firmly adsorb and fix the sample; Using a rubber-head burette, an appropriate amount of electron beam photoresist was dropped onto the semi-transparent anode, and then heated at 500 r·min -1 Spin coating at a rotation speed of 5000 r·min for 5 s -1 Step (3.2) of spin-coating at a rotation speed of 45 s to 60 s to uniformly deposit the electron beam photoresist on the semi-transparent anode. The sample from step (3.2) is heated on a hot plate at 180°C for 60 seconds to sufficiently release the anisole in the electron beam photoresist, and after the electron beam photoresist is dried and cured, a complete electron beam photoresist connecting layer with a flat surface and strong adhesion to the semi-transparent anode is obtained.

[0014] Preferably, step (4) comprises: Step (4.1) of placing the sample prepared in step (3) into the chamber of the electron microscope, placing the surface to be observed and etched facing up, fixing it to the sample stage, sequentially evacuating it using a mechanical pump and a molecular pump, and focusing to check the sample; Step (4.2) of exposing the location to be connected to the drain on the electron beam photoresist connection layer with a precisely focused 15 kV to 30 kV high-energy electron beam using an electron beam exposure system combined with an electron microscope; Step 4.3: Filling the chamber of the electron microscope with high-purity nitrogen gas and removing the sample after atmospheric pressure is reached; After the electron beam exposure, the sample is sequentially immersed in a dedicated developer for 45 to 60 seconds, immersed in isopropanol for 15 to 20 seconds, dried with compressed air, and heated on a heating stage at 100°C for 30 to 60 seconds, thereby removing part of the electron beam photoresist connection layer and obtaining a semi-transparent anode with the drain location to be connected exposed (step 4.4).

[0015] Preferably, step (5) comprises: The sample prepared in step (4) was adsorbed onto a spin coater by a mechanical pump, and PMGI UV photoresist was dropped onto it at 4500 r min -1 Spin-coat the PMGI UV photoresist at 5.1 for 45 s and bake it at 100 °C on a hotplate for 60 s. an ultraviolet photoetching step (5.2) to expose the PMGI photoresist in an ultraviolet stepper and define the location of the source (9) and drain (7) of the phototransistor; a source and drain deposition step (5.3) in which a source (9) and a drain (7) are respectively deposited on the sample prepared in step (4) in a deposition machine using a metal mask of a specific shape; The PMGI UV photoresist is stripped in an immersion mode. The sample fabricated in (5.3) is immersed in the developer solutions PG, IPA, and DI in that order, and the photoresist is stripped from the substrate. This is the PMGI UV photoresist stripping step (5.4). A standard mechanical exfoliation method is used to exfoliate 1 to 5 layers of graphene molecules from highly ordered pyrolytic graphite and transfer the graphene atoms to the sample surface (5.5). a graphene etching step (5.6) in which 1 to 5 layers of graphene are etched into a conductive channel (8) using ultraviolet photoetching and O2 / Ar reactive ions; The sample fabricated in step (5.6) is placed in a magnetron sputtering chamber, and a sputtering step (5.7) of the gate insulating layer (10) is performed by depositing SiO2 on the conductive channel (8) using a metal mask as a gate insulating layer (10) at a communication sputtering power of 200 W for 2000 s. The process includes a step (5.8) of depositing Au as a gate (11) on the gate insulating layer (10) by DC sputtering at a power of 100 W for 300 seconds to obtain a device for integrating an OLED and a phototransistor. [Effects of the Invention]

[0016] Beneficial effects: (1) It realizes the multi-functional integration of organic electronic devices, and simultaneously has the functions of light-emitting display and light-sensing, and realizes the control of the OLED light intensity through the intensity of external light; (2) Solving the problem of the difficulty of installing the three electrodes of the phototransistor, (3) The structure of the OLED and the phototransistor is simplified, the process flow is simplified, the device yield is increased, and it is relatively advantageous for industrial production. [Brief explanation of the drawings]

[0017] [Figure 1] 1 is a light-controlled display device that integrates the OLED of the present invention and a phototransistor. [Figure 2] 1 is a process flow chart of the present invention. [Figure 3] 1 is a circuit diagram of a light-controlled display device according to the present invention; [Figure 4] FIG. 2 is a current change curve diagram between the reflective cathode and the source of the present invention. [Figure 5] 4 is a graph showing the change in the luminous intensity of the device when infrared light of different intensities is irradiated on the gate of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0018] Referring to FIG. 1 , the device structure for integrating an OLED and a phototransistor includes a phototransistor and an OLED with an inverted structure, and includes, from top to bottom, a gate 11, a gate insulating layer 10, a source 9, a conductive channel 8, a drain 7, an electron beam photoresist 6, a semitransparent anode 5, a hole transport layer 4, a light-emitting layer and electron transport layer 3, a reflective cathode 2, and a substrate 1.

[0019] The gate 11, source 9, and drain 7 are made of Au, the gate insulating layer 10 is made of silicon dioxide, and the conductive channel 8 is made of graphene. The Au thickness of the gate 11 is 30 nm to 80 nm, the silicon dioxide thickness is 200 nm to 300 nm, the Au thickness of the source 9 is 30 nm to 80 nm, and the Au thickness of the drain 7 is 150 nm to 180 nm. The graphene is 1 to 5 layers of graphene atoms with a thickness of 0.3 nm to 1.6 nm. The electron beam photoresist 6 is made of polymethyl methacrylate (PMMA 950) with a thickness of 120 nm to 160 nm, and the semi-transparent anode 5 is made of Ag / MoO X The composite semitransparent anode has a hole transport layer 4 made of N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB), a light-emitting layer and electron transport layer 3 made of 8-hydroxyquinolyl aluminum (Alq3), and a reflective cathode 2 made of an Ag / Al alloy, such as Ag / MoO X The thickness is 30nm to 80nm / 5nm to 10nm, the NPB thickness is 30nm to 60nm, the Alq3 thickness is 30nm to 60nm, the Ag / Al thickness is 80nm to 150nm, and Ag and Al metal are mixed in a mass ratio of Ag:Al=75-80%:25-20%.

[0020] In a preferred embodiment, the gate 11 is 50 nm thick Au, the gate insulating layer 10 is 290 nm thick silicon dioxide, the source 9 is 50 nm thick Au, the drain 7 is 170 nm thick Au, the conductive channel 8 is 1-5 layers of graphene with a monolayer thickness of about 0.3 nm-1.6 nm, the electron beam photoresist 6 is 120 nm thick polymethylmethacrylate (PMMA 950), and the semi-transparent anode 5 is Ag(50 nm) / MoOX The anode is a composite semi-transparent anode (8 nm), the hole transport layer 4 is NPB with a thickness of 60 nm, the light-emitting layer and electron transport layer 3 is Alq3 with a thickness of 60 nm, the reflective cathode 2 is an Ag / Al alloy with a thickness of 100 nm and a mass ratio of Ag:Al = 80%:20%, and the substrate 1 is an insulating transparent glass sheet with a size of 20 mm x 20 mm and a thickness of 1 mm.

[0021] Referring to FIG. 2, the present invention discloses an electron beam etching method for integrating an OLED and a phototransistor, which includes the following steps:

[0022] (1) The insulating transparent substrate 1 is cleaned.

[0023] The substrate 1 is immersed in acetone, isopropanol, and ultrapure water in that order, and then immersed in each liquid in an ultrasonic water bath for 20 minutes for cleaning. After being taken out with tweezers, the substrate is dried with compressed nitrogen gas.

[0024] (2) Manufacture an inverted structure OLED.

[0025] First, the substrate 1 is placed in the sample chamber of the deposition machine, with one side of the film to be deposited facing down, and fixed to the sample tray. The reflective cathode 2 material, the light-emitting layer / electron transport layer 3 material, the hole transport layer 4 material, and the semi-transparent anode 5 material are placed in each deposition source of the deposition machine. Then, a mechanical pump is started to draw a vacuum in advance, controlling the vacuum level in the sample chamber to 10 Pa or less. Then, a molecular pump is started to evacuate the chamber to 5 × 10 -4 The pressure is evacuated to a pressure of 100 Pa or less. Finally, the materials on the evaporation sources are heated in order to deposit the reflective cathode 2 material, the light-emitting layer / electron transport layer 3 material, the hole transport layer 4 material, and the semi-transparent anode 5 material in that order.

[0026] Sample tray rotation speed: 20 r·min -1 The deposition rates of the light-emitting layer / electron transport layer 3 material and the hole transport layer 4 material were both 0.1 nm / s -1 The deposition rate of the reflective cathode 2 material and the semi-transparent anode 5 material is 1 nm / s. -1After the semi-transparent anode 5 material is deposited, the sample chamber of the deposition machine is filled with high-purity nitrogen gas, and after atmospheric pressure is reached, the OLED sample with the inverted structure is taken out.

[0027] (3) Spin-coat an e-beam photoresist 6 connection layer.

[0028] First, place the OLED sample with the inverted structure on the spin coater with tweezers, with one side of the film to be spin-coated facing up, and start the mechanical pump to firmly fix the sample. Then, use a rubber-head burette to drop an appropriate amount of electron beam photoresist 6 onto the semi-transparent anode 5, and rotate it at 500 r·min -1 Spin coating at a rotation speed of 5000 r·min for 5 s -1 The sample is spin-coated at a rotation speed of 45 to 60 seconds to form a uniform film of electron beam photoresist 6 on the semi-transparent anode 5. Finally, the sample is heated on a heating plate at 180°C for 60 seconds to fully release the anisole in the electron beam photoresist 6. After the electron beam photoresist 6 is dried and cured, a complete electron beam photoresist 6 connection layer with a flat surface and strong adhesion to the semi-transparent anode 5 is obtained.

[0029] (4) A portion of the electron beam photoresist 6 is removed.

[0030] First, the sample is placed in the chamber of a JSM-7900F electron microscope, placed with the surface to be observed and etched facing up, and secured to the sample stage. A mechanical pump and a molecular pump are used to evacuate the sample, and the focus is adjusted to observe the sample. Next, using an electron beam exposure system combined with the electron microscope, a precisely focused high-energy electron beam of 15 kV to 30 kV is used to expose the location of the drain 7 to be connected on the electron beam photoresist 6 connection layer. The chamber of the JSM-7900F electron microscope is then filled with high-purity nitrogen gas, and after atmospheric pressure is reached, the sample is removed. Finally, the substrate 1 after electron beam exposure is immersed in a dedicated developer (methyl isobutyl ketone:isopropanol = 1:3) for 45 to 60 seconds, then in isopropanol for 15 to 20 seconds, dried with compressed air, and heated on a heating stage at 100°C for 30 to 60 seconds. A portion of the electron beam photoresist 6 connection layer is removed, resulting in a semitransparent anode 5 exposing the location of the drain 7 to be connected.

[0031] The reason why some of the electron beam photoresist 6 is left is to insulate and separate the OLED from positions other than the drain 7 of the phototransistor. By removing some of the electron beam photoresist 6, the contact position between the drain 7 and the semi-transparent anode 5 is exposed, which makes it easier to connect the drain 7 of the phototransistor to the semi-transparent anode 5 in subsequent processes and solves the problem of difficulty in installing the three electrodes of the phototransistor.

[0032] (5) Fabricate a phototransistor.

[0033] First, spin-coat the PMGI ultraviolet photoresist: Adsorb the substrate 1 onto the spin coater with a mechanical pump, and drip the PMGI ultraviolet photoresist using a rubber-head burette at 4500 r min -1The substrate is then spin-coated at a speed of 0.5 rpm for 45 seconds and baked on a hotplate at 100°C for 60 seconds. This is followed by UV photoetching. The PMGI photoresist is exposed to UV light using a UV stepper to define the positions of the source 9 and drain 7 of the phototransistor. The source 9 and drain 7 are then evaporated. The source 9 and drain 7 are then deposited on the substrate 1 using a metal mask with a specific shape in an evaporation system, after which the PMGI UV photoresist is stripped. The PMGI UV photoresist is then stripped in immersion mode, and the substrate 1 is sequentially immersed in developers PG, IPA, and DI to peel the photoresist from the substrate 1. Graphene is then peeled and transferred onto the substrate 1. Using a standard mechanical peeling method, 1 to 5 layers of graphene molecules are peeled from highly ordered pyrolytic graphite and transferred to the sample surface. The graphene is then etched. 1 to 5 layers of graphene are etched into a conductive channel 8 using UV photoetching and O2 / Ar reactive ions. Finally, the gate insulating layer 10 and gate 11 are sputtered. The sample is placed in a magnetron sputtering chamber, and a 290 nm thick SiO2 is deposited on the sample using a metal mask as a gate insulating layer 10 at a communication sputtering power of 200 W for 2000 s, followed by a 50 nm thick Au gate 11 at a DC sputtering power of 100 W for 300 s. This completes the device for integrating an OLED and a phototransistor.

[0034] Through the above process, the structure of the OLED and the phototransistor is simplified, the process is simplified, the device yield is improved, and it is favorable for industrial production.

[0035] (6) Test the photoelectric performance of light-controlled display devices.

[0036] 3 and 1, the circuit diagram of the light-controlled display device integrating an OLED and a phototransistor is a series connection of the two. A voltage U1 is applied between the reflective cathode 2 of the OLED and the source 9 of the phototransistor, and a voltage U2 is applied between the gate 11 and the source 9 of the phototransistor. Here, the phototransistor is a graphene field-effect phototransistor that can probe and respond to infrared light.

[0037] In a preferred embodiment, the gate 11 is 50 nm thick Au, the gate insulating layer 10 is 290 nm thick silicon dioxide, the source 9 is 50 nm thick Au, the drain 7 is 170 nm thick Au, the conductive channel 8 is 1-5 layers of graphene with a monolayer thickness of about 0.3 nm-1.6 nm, the electron beam photoresist 6 is 120 nm thick polymethylmethacrylate (PMMA 950), and the anode 5 is Ag(50 nm) / MoO X The anode is a composite semi-transparent anode (8 nm), the hole transport layer 4 is NPB with a thickness of 60 nm, the light-emitting layer and electron transport layer 3 is Alq3 with a thickness of 60 nm, the reflective cathode 2 is an Ag / Al alloy with a thickness of 100 nm and a mass ratio of Ag:Al=80%:20%, and the substrate 1 is an insulating transparent glass sheet with a size of 20 mm x 20 mm and a thickness of 1 mm.

[0038] With U2 and the infrared light intensity fixed and U1 varied, the current between the reflective cathode 2 of the OLED and the source 9 of the phototransistor was measured, which shows that the current in the light-controlled display device becomes increasingly faster as the voltage U1 increases, as shown in Figure 4.

[0039] With U1 and U2 fixed, the gate 11 of the light-controlled display device was irradiated with infrared light of different intensities, and the changes in the light-emitting intensity of the light-controlled display device were tested. The results are shown in Figure 5. As can be seen from Figure 5, the light-controlled display device is sensitive to infrared light intensity, and the OLED emits light of different intensities under infrared light irradiation of different intensities. The stronger the infrared light irradiation intensity, the stronger the OLED light emission intensity, and the two show a positive correlation.

[0040] However, as can be seen from the photoelectric performance test of the light-controlled display device, the present invention realizes the integration of multi-function organic electronic devices, and has the functions of light-emitting display and light-sensing, and realizes the control of the light-emitting intensity of the OLED through the intensity of external infrared light.

Claims

1. 1. A device for integrating an OLED and a phototransistor, comprising: an OLED comprising a substrate (1), a reflective cathode (2) located above the substrate (1), a light-emitting layer / electron transport layer (3) located above the reflective cathode (2), a hole transport layer (4) located above the light-emitting layer / electron transport layer (3), a semi-transparent anode (5) located above the hole transport layer (4), and an electron beam photoresist (6) located above the semi-transparent anode (5); a phototransistor including a drain (7) located above one side of the semi-transparent anode (5), a source (9) located on one side of the electron beam photoresist (6), a conductive channel (8) located above the electron beam photoresist (6), a gate insulating layer (10) located above the conductive channel (8), and a gate (11) located above the gate insulating layer (10), the conductive channel (8) being located between the source (9) and the drain (7), and the source (9) being located on the electron beam photoresist (6) on the side away from the drain.

2. 2. The device for integrating an OLED and a phototransistor according to claim 1, characterized in that the material of the gate (11), source (9) and drain (7) is Au, the material of the gate insulating layer (10) is silicon dioxide, and the material of the conductive channel (8) is graphene.

3. 3. The device for integrating an OLED and a phototransistor according to claim 2, wherein the thickness of the Au of the gate (11) is 30 nm to 80 nm, the thickness of the silicon oxide of the gate insulating layer (10) is 200 nm to 300 nm, the thickness of the Au of the source (9) is 30 nm to 80 nm, the thickness of the Au of the drain (7) is 150 nm to 180 nm, and the graphene of the conductive channel (8) is 1 to 5 layers of graphene atoms and has a thickness of 0.3 nm to 1.6 nm.

4. The material of the electron beam photoresist (6) is polymethyl methacrylate, the thickness of the electron beam photoresist (6) is 120 nm to 160 nm, and the semi-transparent anode (5) is Ag / MoO Ｘ A composite semi-transparent anode, Ｘ The thickness is 30 nm to 80 nm / 5 nm to 10 nm, the material of the hole transport layer (4) is NPB, the thickness of the NPB is 30 nm to 60 nm, and the material of the light emitting layer / electron transport layer (3) is Alq ３ and the Alq ３ The device for integrating an OLED and a phototransistor according to claim 1, characterized in that the thickness is 30nm-60nm, and the reflective cathode (2) is an Ag / Al alloy, in which the Ag and Al metals are mixed in a mass ratio of 75-80%:25-20%.

5. 5. A method for electron beam etching of a device for integrating an OLED and a phototransistor according to any one of claims 1 to 4, comprising the steps of: A step (1) of cleaning a substrate (1); Step (2) of fabricating an inverted structure OLED; Step (3) of spin-coating an e-beam photoresist (6) connection layer; a step (4) of removing a portion of the electron beam photoresist (6); and (5) fabricating a phototransistor.

6. 6. The electron beam etching method for integrating an OLED and a phototransistor according to claim 5, wherein in the specific step of step (1), the substrate (1) is successively immersed in acetone, isopropanol, and ultrapure water, and then immersed in an ultrasonic water bath for 20 minutes for cleaning, and then removed and dried with nitrogen gas.

7. The step (2) The substrate (1) is placed in the sample chamber of the deposition machine, with one side of the film to be deposited facing down, and the substrate (1) is fixed to the sample tray (2.1). A reflective cathode (2) material, a light-emitting layer / electron transport layer (3) material, a hole transport layer (4) material, and a semi-transparent anode (5) material are placed on each evaporation source of the evaporation machine (2.2). The mechanical pump is started to draw a vacuum in advance, and the vacuum level in the sample chamber is controlled to 10 Pa or less (2.3). Start the molecular pump and pump 5x10 －４ When the pressure is reduced to below 2.4 Pa, The materials on the evaporation source are heated in order to deposit (2.5) a reflective cathode material, a light-emitting layer / electron transport layer material (3), a hole transport layer material (4), and a semi-transparent anode material (5) in that order.

6. The electron beam etching method for integrating an OLED and a phototransistor according to claim 5, further comprising: filling the sample chamber of the deposition machine with high-purity nitrogen gas after depositing the semi-transparent anode material (5), and then removing the fabricated sample after atmospheric pressure is reached (2.6).

8. The step (3) Step (3.1) of placing the sample prepared in step (2) in a spin coater, placing one side of the film to be spin coated upward, and starting the mechanical pump to firmly adsorb and fix the sample; Using a rubber-head burette, an appropriate amount of electron beam photoresist (6) was dropped onto the semi-transparent anode (5), and then heated at 500 rpm. －１ Spin coating at a rotation speed of 5 seconds, 5000 rpm －１ Step (3.2) of spin-coating at a rotation speed of 45 to 60 seconds to uniformly deposit an electron beam photoresist (6) on the semi-transparent anode (5); 6. The electron beam etching method for integrating an OLED and a phototransistor according to claim 5, further comprising: step (3.3) of heating the sample in step (3.2) on a hot plate at 180°C for 60 seconds to fully release the anisole in the electron beam photoresist, and after the electron beam photoresist (6) is dried and cured, a complete electron beam photoresist connecting layer with a flat surface and strong adhesion to the semi-transparent anode (5) is obtained.

9. The step (4) Step (4.1) of placing the sample prepared in step (3) into the chamber of the electron microscope, placing the surface to be observed and etched facing up, fixing it on the sample stage, and sequentially evacuating it using a mechanical pump and a molecular pump, and focusing to check the sample; Step (4.2) of exposing the location to be connected to the drain (7) on the electron beam photoresist (6) connection layer with a precisely focused 15 kV to 30 kV high energy electron beam using an electron beam exposure system combined with an electron microscope; Step (4.3) of filling the chamber of the electron microscope with high-purity nitrogen gas and removing the sample after atmospheric pressure is reached; 6. The electron beam etching method for integrating an OLED and a phototransistor according to claim 5, further comprising the step (4.4) of sequentially immersing the sample after electron beam exposure in a dedicated developer for 45s-60s, immersing in isopropanol for 15s-20s, drying with compressed air, and heating on a heating stage at 100°C for 30s-60s, thereby removing a part of the electron beam photoresist (6) connection layer and obtaining a semi-transparent anode (5) with the drain position to be connected exposed.

10. The step (5) The sample prepared in step (4) was adsorbed onto a spin coater by a mechanical pump, and PMGI ultraviolet photoresist was dropped onto it and then rotated at 4500 r.min. －１ a spin-coating step of PMGI UV photoresist (5.1) by spin-coating at rpm for 45 s and baking on a hotplate at 100 °C for 60 s; a UV photoetching step (5.2) in which the PMGI photoresist is exposed in a UV stepper to define the location of the source (9) and drain (7) of the phototransistor; a source and drain deposition step (5.3) in which a source (9) and a drain (7) are respectively deposited on the sample prepared in step (4) in a deposition machine using a metal mask with a specific shape; A PMGI UV photoresist stripping step (5.4) is performed in an immersion mode, in which the sample prepared in (5.3) is sequentially immersed in the developer PG, IPA, and DI to strip the photoresist from the substrate. a graphene exfoliation and transfer step (5.5) in which 1 to 5 layers of graphene molecules are exfoliated from the highly ordered pyrolytic graphite using a standard mechanical exfoliation method and the graphene atoms are transferred to the sample surface; UV photoetching and O ２ a graphene etching step (5.6) in which 1 to 5 layers of graphene are etched into a conductive channel (8) using Ar / Ar reactive ions; The sample prepared in step (5.6) is placed in a magnetron sputtering chamber, and the conductive channel (8) is coated with SiO2 using a metal mask. ２ A sputtering step (5.7) of the gate insulating layer (10) in which the above is deposited as the gate insulating layer (10) at a communication sputtering power of 200 W for 2000 s; 6. The electron beam etching method for integrating an OLED and a phototransistor according to claim 5, further comprising the step (5.8) of depositing Au as a gate (11) on the gate insulating layer (10) by DC sputtering at a power of 100 W for 300 seconds to obtain a device for integrating an OLED and a phototransistor.

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