Semiconductor device

A planar transistor using an oxide semiconductor with a simplified manufacturing process addresses parasitic capacitance issues in high-resolution displays, ensuring stable electrical performance and reliable image quality.

JP2026035656APending Publication Date: 2026-03-04SEMICON ENERGY LAB CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-11-19
Publication Date
2026-03-04

AI Technical Summary

Technical Problem

As display devices increase in size and resolution, inverted staggered transistors using oxide semiconductors face issues with parasitic capacitance between electrodes, leading to signal delays and image quality deterioration, while planar transistors require a complex manufacturing process.

Method used

A semiconductor device with a planar transistor structure using an oxide semiconductor, incorporating a gate electrode, gate insulating film, and a capacitor connected to the transistor, with specific insulating films and conductive films to reduce parasitic capacitance and simplify manufacturing.

Benefits of technology

The solution provides a semiconductor device with stable electrical characteristics, high on-state current, low off-state current, and reliable operation, suitable for high-resolution displays with reduced manufacturing complexity.

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Abstract

To provide a semiconductor device including a planar transistor using an oxide semiconductor and a capacitor connected to the transistor.SOLUTION: A semiconductor device including a transistor and a capacitor, the transistor including an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source electrode and a drain electrode over the third insulating film, the source electrode and the drain electrode being electrically connected to the oxide semiconductor film, the capacitor including a first conductive film, a second conductive film, and a second insulating film, the first conductive film is provided on the same surface as the gate electrode, the second conductive film is provided on the same surface as the source electrode and the drain electrode, and the second insulating film is provided between the first conductive film and the second conductive film.SELECTED DRAWING: Figure 1
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Citation Information

Patent Citations

  • Amorphous oxide and field effect transistor

    JP2006165529A

  • Transistor, semiconductor element including the same, and method of manufacturing them

    JP2009278115A