Indication device

Abstract

A highly reliable display device or electronic device is provided. [Solution] A display device having a first electrode, a second electrode, a light-emitting layer between the first electrode and the second electrode, and a protective film on the second electrode, wherein the protective film has a first insulating film and a second insulating film on the first insulating film. The first insulating film contains one or more of aluminum oxide, hafnium oxide, and zirconium oxide, and the second insulating film contains one or more of aluminum oxide, hafnium oxide, and zirconium oxide. The first insulating film and the second insulating film have different compositions, and the protective film has a water vapor permeability of 1×10 -2 g / (m 2 ·day).

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a display device. Or, one embodiment of the present invention relates to a manufacturing method of a display device. Regarding the law.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. For example, one embodiment of the present invention is The present invention relates to a process, machine, manual, or method of manufacture. or relating to a fact or composition of matter. One aspect of the present invention relates to a storage device, a processor, a driving method thereof, or a manufacturing method thereof. .

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. Therefore, semiconductor elements such as transistors and diodes and semiconductor circuits are semiconductors. The present invention is also applicable to display devices, light-emitting devices, lighting devices, electro-optical devices, electronic devices, etc. Therefore, the display device, the light emitting device, the lighting device, etc. may include a semiconductor element or a semiconductor circuit. Devices such as optical devices, electro-optical devices, and electronic equipment may also include semiconductor devices. [Background technology]

[0004] In recent years, research and development of liquid crystal elements has been actively carried out as display elements used in the display area of ​​display devices. In addition, electroluminescence Research and development of light-emitting devices using EL (electroluminescence) is also being actively pursued. The light-emitting element has a layer containing a light-emitting substance sandwiched between a pair of electrodes. By adding the luminescent material, luminescence can be obtained from the luminescent material.

[0005] In particular, since the above-mentioned light-emitting element is a self-luminous type, a display device using this element has excellent visibility. It has the advantage of not requiring a backlight and consuming less power. It also has the advantage of being easy to manufacture and having a high response speed.

[0006] Furthermore, as a display device having the above-mentioned display element, flexibility can be achieved. The adoption of a substrate having such a structure is being considered.

[0007] A method for manufacturing a display device using a flexible substrate is to use a glass substrate or a quartz substrate. After a semiconductor element such as a thin film transistor is fabricated on the substrate, the semiconductor element and the substrate are Filling the gap between the plates with organic resin, the glass substrate or quartz substrate can be transferred to another substrate (e.g., a flexible substrate). A technology has been developed for transferring a semiconductor element onto a substrate (Patent Document 1).

[0008] The light emitting element formed on the flexible substrate has a function to protect the surface of the light emitting element and to protect it from external moisture. In order to prevent the intrusion of foreign matters or impurities, a flexible substrate may be further provided on the light emitting element. .

[0009] Furthermore, display devices are expected to be used in a variety of applications, and diversification is required. For example, the development of smartphones and tablet terminals equipped with touch sensors as mobile information terminals. Development is underway. [Prior art documents] [Patent documents]

[0010] [Patent Document 1] Japanese Patent Application Laid-Open No. 2003-174153 Summary of the Invention [Problem to be solved by the invention]

[0011] Furthermore, light-emitting elements that are primarily made of organic compounds are particularly susceptible to deterioration, primarily due to water. As a result, the brightness of the display device may be partially reduced. In this case, non-luminescent areas may occur.

[0012] An object of one embodiment of the present invention is to provide a highly reliable display device or electronic device. Another embodiment of the present invention is to provide a display device or electronic device that is less likely to be damaged. Another object of one embodiment of the present invention is to provide a thin or lightweight display device. Another object of the present invention is to provide an electronic device. Another object of the present invention is to provide a display device or electronic device with low resistance. An object of one embodiment is to provide a novel display device or electronic device.

[0013] The description of these problems does not preclude the existence of other problems. It is not necessary for one embodiment to solve all of these problems. The subject matter will be self-evident from the description, drawings, claims, etc. It is possible to extract other issues from the drawings, claims, etc. [Means for solving the problem]

[0014] One aspect of the present invention is a method for manufacturing a semiconductor device comprising: a first electrode, a second electrode, and a contact between the first electrode and the second electrode; The display device has a light-emitting layer and a protective film on the second electrode. The protective film is a first insulating film. and a second insulating film on the first insulating film, the first insulating film being made of aluminum oxide, hafnium oxide and zirconium oxide, and the second insulating film is aluminum oxide. a first insulating film and a second insulating film, the first insulating film having one or more of silicon dioxide, hafnium oxide, and zirconium oxide; The composition of the insulating film is different, and the protective film has a water vapor permeability of 1×10 -2 g / (m 2 ·day)Not yet It is full.

[0015] Another embodiment of the present invention is a semiconductor device including a first electrode, a third insulating film overlapping an end portion of the first electrode, and a light-emitting layer on the first electrode and the third insulating film; a second electrode on the light-emitting layer; The display device has a protective film. The protective film includes a first insulating film and a second insulating film on the first insulating film. The first insulating film is made of aluminum oxide, hafnium oxide, and zinc oxide. the second insulating film comprises one or more of aluminum oxide, hafnium oxide, and and zirconium oxide, and the first insulating film overlaps with the first electrode via the light-emitting layer. a first region overlapping the third insulating film through the light emitting layer, and a second region overlapping the third insulating film through the light emitting layer, has a region with a lower film density than the first region.

[0016] Furthermore, one embodiment of the present invention is a semiconductor device including a first electrode, a second electrode, and a semiconductor device including the first electrode and the second electrode. and a light-emitting layer between the aluminum oxide layers by sputtering. a first insulating film containing one or more of tungsten oxide, hafnium oxide, and zirconium oxide; and aluminum oxide, hafnium oxide, and zirconium oxide were deposited on the substrate using the ALD method. A method for manufacturing a display device, in which a second insulating film containing one or more of aluminum is formed on a first insulating film be.

[0017] The second insulating film may have a higher carbon content than the first insulating film.

[0018] Furthermore, a part of the second insulating film may fill a part of the first insulating film.

[0019] In addition, a colored film may be provided in contact with the second insulating film.

[0020] Another embodiment of the present invention may include a first display element and a second display element. The display element includes a first electrode, a second electrode, and a light-emitting layer between the first electrode and the second electrode. The second display element may be a liquid crystal element. [Effects of the Invention]

[0021] According to one embodiment of the present invention, a highly reliable display device or electronic device can be provided. According to one embodiment of the present invention, a display device, an electronic device, or the like that is less likely to be damaged can be provided. Alternatively, according to one aspect of the present invention, a thin or lightweight display device can be provided. According to one embodiment of the present invention, a device or an electronic device that consumes low power can be provided. A display device, an electronic device, or the like can be provided. As a result, it is possible to provide a novel display device or electronic device.

[0022] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have all of these effects. Effects other than these may be included in the description. The above is self-evident from the description, drawings, claims, etc. From the above descriptions, it is possible to extract other effects. [Brief explanation of the drawings]

[0023] [Figure 1]1A to 1C illustrate a display device according to an embodiment. [Figure 2] 1A to 1C illustrate a display device according to an embodiment. [Figure 3] 1A to 1C illustrate a display device according to an embodiment. [Figure 4] 1A to 1C illustrate a display device according to an embodiment. [Figure 5] 1A to 1C illustrate a display device according to an embodiment. [Figure 6] 1A to 1C illustrate a display device according to an embodiment. [Figure 7] 1A to 1C illustrate a display device according to an embodiment. [Figure 8] 1A to 1C illustrate a display device according to an embodiment. [Figure 9] FIG. 2 is a diagram illustrating a pixel unit. [Figure 10] FIG. 2 is a diagram illustrating a pixel unit. [Figure 11] 1A and 1B are a diagram illustrating a circuit of a display device and a top view of a pixel. [Figure 12] FIG. 2 illustrates a circuit of a display device. [Figure 13] 1A and 1B are a diagram illustrating a circuit of a display device and a top view of a pixel. [Figure 14] 1A and 1B illustrate a structure of a display device. [Figure 15] 1A and 1B illustrate a structure of a display device. [Figure 16] 1A and 1B illustrate a structure of a display device. [Figure 17] 1 shows a configuration example of a display module according to an embodiment. [Figure 18] 1. An electronic device according to an embodiment. [Figure 19] 1. An electronic device according to an embodiment. [Figure 20] 1. An electronic device according to an embodiment. [Figure 21] 1A and 1B are diagrams illustrating the transmittance, reflectance, and absorptance of a sample. [Figure 22] Diagram explaining a STEM image. [Figure 23] 1A to 1C illustrate a manufacturing process of a sample. [Figure 24]FIG. 1 is a diagram illustrating an optical microscope photograph of a sample. [Figure 25] FIG. 10 is a diagram illustrating the luminescence characteristics of a sample. [Figure 26] FIG. 10 is a diagram illustrating the luminescence characteristics of a sample. DETAILED DESCRIPTION OF THE INVENTION

[0024] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention is based on the following embodiments. The present disclosure should not be construed as being limited to the contents of the preceding paragraph.

[0025] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be assigned.

[0026] In each figure described in this specification, the size, layer thickness, or area of ​​each component is The figures may be exaggerated for clarity and are not necessarily limited to that scale. stomach.

[0027] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The number is not a numerical limitation.

[0028] A transistor is a type of semiconductor device that controls the amplification of current and voltage, and conduction or non-conduction. In this specification, the transistor can be , IGFET(Insulated Gate Field Effect Trans istor) and thin film transistor (TFT) ) is included.

[0029] In this specification, the term "metal oxide" refers to a metal in a broad sense. Metal oxides are oxides of the following: oxide insulators, oxide conductors (including transparent oxide conductors), ), oxide semiconductor (also called oxide semiconductor or simply OS) For example, when a metal oxide is used for the semiconductor film of a transistor, the metal Metal oxides are sometimes called oxide semiconductors. and switching action, the metal oxide is Metal oxide semiconductor, abbreviated as OS In addition, when describing an OS FET, it is possible to use a metal oxide or an oxide In other words, it is a transistor having a semiconductor.

[0030] In this specification and the like, metal oxides containing nitrogen are also referred to as metal oxides (metal ox). Metal oxides containing nitrogen are sometimes collectively called metal oxynitrides (metal oxynitrides). It may also be called tal oxynitride.

[0031] In the present specification and the like, CAAC (c-axis aligned crystal) l), and when written as CAC (Cloud-Aligned Composite) CAAC represents an example of a crystal structure, and CAC represents a function or a material configuration. Represents an example.

[0032] In this specification and the like, CAC-OS or CAC-metal oxide means , a part of the material has a conductive function and a part of the material has an insulating function, and the whole of the material has a It functions as a semiconductor. When de is used in the semiconductor film of a transistor, the conductive function is to transfer electrons ( The insulating function is the function of not allowing the flow of electrons, which act as carriers. By making the conductive function and insulating function work in a complementary manner, Switching function (On / Off function) is set to CAC-OS or CAC-meta It can be added to CAC-OS or CAC-metal oxide. In the IDE, by separating each function, we maximize the functionality of both. can be done.

[0033] In this specification and the like, CAC-OS or CAC-metal oxide means The conductive region has the above-mentioned conductive function and the insulating region. The conductive region has the insulating function described above. The regions may be separated at the nanoparticle level. The conductive areas may be unevenly distributed in the material. They may be observed connected in a dot-like pattern.

[0034] In addition, in the CAC-OS or CAC-metal oxide, a conductive region and The insulating regions are each 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. They may be dispersed in the material at sizes of less than 1 m.

[0035] In addition, CAC-OS or CAC-metal oxide has different band gaps For example, CAC-OS or CAC-metal ox The ide consists of a wide-gap component due to the insulating region and a conductive component due to the conductive region. In this configuration, when carriers flow, In addition, carriers mainly flow in the narrow gap component. The component with a narrow gap acts complementary to the component with a wide gap. Carriers also flow into the wide-gap component in conjunction with the component that has a wide gap. CAC-OS or CAC-metal oxide is used for the channel region of a transistor. When the transistor is turned on, the current driving force is high, that is, the on-state current is large, and Therefore, a high field effect mobility can be obtained.

[0036] That is, CAC-OS or CAC-metal oxide is a matrix composite. matrix composite, or metal matrix composite It can also be called a matrix composite.

[0037] (Embodiment 1) In this embodiment mode, a mode of a display device will be described with reference to FIGS.

[0038] 1A is a cross-sectional view of a display device according to the present embodiment. The light-emitting element 20 has a first electrode 10 and an EL layer 1 The light-emitting element 22 has a first electrode 12, an EL layer 16, and a second electrode 18. The second electrode 18 is formed on the first electrode 10. The insulating film 14 covers the ends of the first electrodes 10 and 12. A protective film 28 is provided on the light emitting element 20. The protective film 28 and the substrate 42 are bonded to each other with an adhesive 44. The substrates 40 and 42, the adhesive 44, the first electrodes 10 and 12, and the EL layer 16 are fixed together. The details of the second electrode 18 and the insulating film 14 will be described in another embodiment.

[0039] Next, the vicinity of the light emitting elements 20 and 22 will be described with reference to the enlarged cross-sectional view of FIG. 1(B). The light-emitting element 20 has a first electrode 10, an EL layer 16 including a light-emitting layer, and a second electrode 18. The light-emitting element 22 has a first electrode 12, an EL layer 16, and a second electrode 18. The first electrode 10 and the first electrode 12 are separated. An insulating film 14 is formed to cover the end of the electrode 12. That is, the first insulating film 14 is formed at the opening of the insulating film 14. A part of the surface of each of the first electrode 10 and the first electrode 12 is exposed. , 22, a protective film 28 including an insulating film 24 and an insulating film 26 on the insulating film 24 is formed. do.

[0040] The insulating film 24 and the insulating film 26 are made of aluminum oxide, gallium oxide, and germanium oxide, respectively. tungsten oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide Oxides such as tungsten and tantalum oxides can be formed in single or multiple layers. The insulating film 24 and the insulating film 26 are made of a nitride such as silicon nitride or aluminum nitride. It can be formed using an object.

[0041] The insulating films 24 and 26 are formed using the same oxide or nitride. Alternatively, the insulating film 24 and the insulating film 26 may be formed using different oxides or nitrides. For example, the insulating film 24 and the insulating film 26 may be formed using aluminum oxide. Alternatively, the insulating film 24 and the insulating film 26 may each be made of zirconium oxide. Alternatively, the insulating film 24 and the insulating film 26 can be formed using an oxide film. Alternatively, the insulating film 24 and the insulating film 25 may be formed using aluminum and silicon nitride. The insulating film 26 may be formed using zirconium oxide and silicon nitride, respectively. .

[0042] The thickness of the insulating film 24 is 50 nm or more and 1000 nm or less, preferably 100 nm or more and 30 The thickness of the insulating film 26 can be set to 1 nm or more and 100 nm or less. , and preferably 5 nm or more and 50 nm or less.

[0043] In addition, as shown in FIG. 1C, an insulating film 28_1 formed on the second electrode 18 The film 24_1 and the insulating film 26_1 on the insulating film 24_1 are thin and therefore transparent. Since the output is improved, the productivity of the display device can be increased.

[0044] The insulating films 24 and 24_1 are formed by sputtering. _1 is Atomic Layer Deposition method (ALD method) It is formed using

[0045] In the ALD method, the pressure in the film formation chamber is set to atmospheric pressure or reduced pressure, and a source gas for the reaction (e.g., oxidizing agent) is introduced. The film is formed by sequentially introducing the raw material gases (agent and precursor) into the film-forming chamber and repeating the introduction of the raw material gas. The first source gas is adsorbed on the surface to be formed to form a first layer, and the second source gas is introduced into the film forming chamber. By introducing the first layer and the second source gas into the The order of introduction of the source gases is controlled and multiple steps are taken until the desired thickness is reached. By repeating this process, a thin film with excellent step coverage can be formed.

[0046] The ALD method uses thermal reaction as a means to activate part or all of the source gas. Thermal ALD (thermal ALD) is a method that uses plasma reactions, while PEALD (Plasma Enhanced ALD) is a method that uses plasma reactions. nced ALD (Plasma-Assisted ALD) method or PAALD (Plasma-Assisted ALD) method Compared to thermal ALD, the PEALD method allows for lower film formation temperatures. It is possible to form a film at room temperature. It also has the effect of increasing the film formation speed and making the film dense. It has the effect of making things easier.

[0047] By stacking insulating films using different film formation methods, the diffusion of impurities, such as water and oxygen, It is possible to form a protective film that can reduce diffusion. The ALD method allows film formation at low temperatures. The EL layer included in the light-emitting element has low heat resistance. Therefore, the insulating films 24, 24_1 and the insulating films 26, 26_1 that function as protective films are relatively It is preferable to form the film at a relatively low temperature, typically 100°C or less, by sputtering or A. The LD method is suitable.

[0048] When the insulating films 24, 24_1 and the insulating films 26, 26_1 are aluminum oxide films, The film densities of 24, 24_1 and the insulating films 26, 26_1 are 2.5 g / cm 3 3 more .95g / cm 3The film density is preferably less than 100%. It can be measured using X-ray reflectometry (R).

[0049] The insulating films 24 and 24_1 have a smaller amount of impurities such as carbon than the insulating films 26 and 26_1. In other words, the insulating films 26 and 26_1 have a lower carbon content than the insulating films 24 and 24_1. The amount of impurities is large. The quantity of impurities is determined by X-ray photoelectron spectroscopy (XPS). This can be done using Photoelectron Spectroscopy .

[0050] If the film formation temperature in the ALD method is low, some of the precursors will not react and will remain as impurities. On the other hand, the sputtering method forms a film by physically depositing part of the target. This makes it difficult for impurities to get into the film.

[0051] From the above, the insulating films 24 and 24_1 are formed by the sputtering method, and the insulating films 24 and 24_1 are formed by the ALD method. By forming the insulating films 26 and 26_1 using , the amount of impurities is less than that of 26_1.

[0052] The water vapor permeability of the protective films 28 and 28_1 is 1×10 -2 g / (m 2 ·day) less than, good Preferably 5 x 10 -3 g / (m 2 ·day) or less, more preferably 1×10 -4 g / ( m 2 ·day) or less, more preferably 1 × 10 -5 g / (m 2 ·day) and further Preferably 1 x 10 -6 g / (m 2The lower the water vapor permeability, the lower the As a result, the protective films 28, 28_1 function as moisture-proof films. The diffusion of water can be reduced.

[0053] In FIG. 1B, the protective film 28 has a laminated structure of the insulating film 24 and the insulating film 26. However, a plurality of pairs of the insulating film 24 and the insulating film 26 may be stacked. The insulating film 26, the insulating film 24, and the insulating film 26 may be stacked in this order.

[0054] Here, the effects of the protective film 28 and the method for producing the same, which are an embodiment of the present invention, will be described. FIG. 2(A) is an enlarged cross-sectional view of an insulating film 24 formed by sputtering. The insulating film 24 formed by the sputtering method is formed by sputtering a sputtering gas onto a sputtering target. Sputtering is performed to deposit the components of the sputtering target on the surface to be formed. The deposited films have low impurity levels.

[0055] However, in the sputtering method, the components of the sputtering target are physically shaped. Since the insulating film 24 is deposited on the surface, the deposited film is easily affected by the shape of the surface on which it is formed. The second electrode 18 has a surface, and includes a region 18a that overlaps with the insulating film 14 and a region that does not overlap with the insulating film 14. The surface of the region 18a overlapping the insulating film 14 is inclined with respect to the substrate. On the other hand, the surface of the region 18b that does not overlap with the insulating film 14 is parallel to the substrate. Therefore, in the insulating film 24, a low-density region 24a is formed in the region formed on the region 18a. On the other hand, in the insulating film 24, the region 24b formed on the region 18b is low-density. Area 24a is hardly included.

[0056] In the low density region 24a, water, oxygen, etc. are easily diffused. Even if the protective film is formed by a single layer of the insulating film 24 formed using the It is difficult to prevent the diffusion of elements.

[0057] When the insulating film 26 is formed on the insulating film 24 by the ALD method, as shown in FIG. It is possible to reduce the proportion of the low density region 24a in the insulating film 24. This is because AL Method D is a monoatomic layer deposition method with high coating properties, so it is suitable for insulating films formed by sputtering. This is thought to be because the insulating film 26 is deposited while filling the gaps in the low-density regions 24a of the film 24. Even if the insulating film 24 includes a low-density region 24a, the low-density region 24a The insulating film 26 is formed so as to cover the insulating film 4a, and the insulating film 26 serves as a protection film against the diffusion of impurities. This function prevents water, oxygen, etc. from diffusing from the outside into the light emitting element.

[0058] From the above, after forming an insulating film on the light-emitting element by sputtering, ALD By forming an insulating film using this method, a protective film that reduces the diffusion of water, oxygen, etc. can be formed. Furthermore, by forming the protective film on the light emitting element, water, It is possible to prevent the diffusion of oxygen and the like, and to reduce the deterioration of the light-emitting element. In addition, a display device having a highly reliable light-emitting element can be manufactured.

[0059] (Embodiment 2) In this embodiment mode, another mode of the display device will be described with reference to FIG. 3 is a cross-sectional view of the display device shown in the present embodiment. 8 and the adhesive 44.

[0060] The vicinity of the light emitting elements 20 and 22 will be described with reference to the enlarged cross-sectional view of FIG. The colored films 30 and 32 are provided on the protective film 28. The colored film 30 is connected to the light emitting element 2 via the protective film 28. The colored film 32 overlaps with the light emitting element 22 via the protective film 28.

[0061] The colored films 30 and 32 will be described in detail in a later embodiment.

[0062] The colored films 30 and 32 are formed by applying a composition onto the protective film 28, exposing and developing the composition, and then heating the composition. Alternatively, the colored film 30 may be formed by a photolithography process. 32 is formed by discharging the composition by an ink-jet method and then performing a heat treatment. This can be done.

[0063] Since the colored films 30 and 32 are formed using a composition, if the composition contains water or the like, If the water diffuses into the light emitting element, the light emitting element will deteriorate.

[0064] However, the protective film 28 can reduce the diffusion of water, oxygen, etc. from the outside. Therefore, even if a colored film is formed directly on the protective film 28, water contained in the material may penetrate into the light emitting element. Therefore, deterioration of the light emitting element can be reduced.

[0065] In a display device, the thickness of the display device is reduced by forming a colored film on a light-emitting element. In particular, in a high-resolution display device of 1000 ppi or more, it is possible to color the opposing substrate. When a film or the like is provided, it is necessary to align the light emitting element with the colored film. The more there are, the more difficult it becomes to align the light-emitting element and the colored film, which can lead to a decrease in yield. On the other hand, by forming a colored film on the light-emitting element, alignment between the light-emitting element and the colored film is not required. Therefore, it is possible to increase the yield.

[0066] In addition, in a high-definition display device, if the distance between the light-emitting element and the colored film is large, the adjacent pixels may be blurred. This causes light leakage into the colored film provided on the substrate, adversely affecting the viewing angle characteristics. Therefore, in order to improve the viewing angle characteristics, it is preferable to reduce the distance between the light emitting element and the colored film. In the display device shown in this embodiment, a colored film can be formed over a light-emitting element through a protective film. Therefore, it is possible to reduce the distance between the light emitting element and the colored film, and improve the viewing angle characteristics. This can be done.

[0067] (Embodiment 3) In this embodiment, an example of a display device according to one embodiment of the present invention will be described.

[0068] Hereinafter, a more specific configuration example of a display device according to one embodiment of the present invention will be described with reference to the drawings. I will explain.

[0069] <Display device> FIG. 4 is a perspective view of the display device 710. As shown in FIG.

[0070] The display device 710 includes a substrate 751a and a substrate 752a. The outline is shown by a dashed line.

[0071] The display device 710 includes a display unit 761a, a circuit unit 762a, and a substrate 751a and a substrate 752a. 2a, wiring 765a, etc. Also, IC 764a and FPC 763a are provided on the substrate 751a. Therefore, the display device 710 is called a display module. It is also possible.

[0072] The circuit portion 762a can be, for example, a circuit that functions as a scan line driver circuit.

[0073] The wiring 765a supplies signals and power to the display portion 761a and the circuit portion 762a. The signal and power are input from the outside via FPC763a or Input from C764a.

[0074] In addition, in FIG. 4, a substrate 751a is formed by a COG (Chip On Glass) method or the like. The IC 764a is provided in the scanning line driving circuit, for example. An IC that functions as a signal line driver circuit or a signal line driver circuit can be applied. If not necessary, it is not necessary to provide a. Also, IC764a is a COF (Chip On It may be mounted on FPC763a using a film method or the like.

[0075] 4 shows an enlarged view of a part of the display unit 761a. The conductive films 121 of the display element are arranged in a matrix.

[0076] FIG. 5A is a schematic cross-sectional view of a display portion of a display device 710. In FIG.

[0077] The display device 710 includes a transistor 741a, a transistor 742a, and a transistor 743a between a substrate 751a and a substrate 752a. The transistor 741b, the display element 721R, the display element 721G, and the display element 721B (not shown) The substrate 751a and the substrate 752a are bonded together by an adhesive layer 151a. The transistor 741a, the transistor 741b, the display element 721R, and the like are covered with the insulating film 7 It is located on 31.

[0078] The display device 710 includes a display element 721R, a display element 721G, and a display element 721B. (not shown) have light emitting elements that emit different colors, and the substrate 752a side (display surface The light is emitted to the side.

[0079] FIG. 5B shows the transistors 741a and 741b in FIG. The display element 721R and its vicinity are shown in an enlarged view. Since a configuration similar to that of the display element 721R shown in FIG. The following description can be used:

[0080] The transistor 741a and the transistor 741b are provided over the insulating film 731. The transistor 741a is connected to the transistor 741b and serves as the selection transistor of the pixel. The transistor 741b is connected to the display element 721R and functions as a It functions as a drive transistor for controlling the current flowing through the transistor 721R.

[0081] The transistor 741a includes a conductive film 111 serving as a gate and a gate insulating film 112. The insulating film 132 functions as a source or a drain. a conductive film 113a serving as the other of the source and the drain, and a conductive film 113b serving as the other of the source and the drain. The transistor 741a shown in FIG. 5B and the like has a bottom-gate channel edge. It is a transistor with a MOSFET structure.

[0082] In addition, an insulating film 133 is provided to cover the transistor 741a. , functions as a protective film for protecting the transistor 741a.

[0083] The transistor 741b is provided over the conductive film 113b with the semiconductor film 112 interposed therebetween with the insulating film 133 interposed therebetween. The semiconductor film 112b is provided with a conductive film 113c and a conductive film 113d in contact with the semiconductor film 112b. Part of the conductive film 113b functions as the gate of the transistor 741b. A part of the conductive film 113c functions as a gate insulating film of the transistor 741b. The film 113d functions as the source or drain of the transistor 741b, respectively.

[0084] In this way, the transistor 741b is provided above the transistor 741a. In addition, the conductive film 113b is connected to the other of the source and the drain of the transistor 741a. This also serves as the gate of the transistor 741b. 1a and transistor 741b are arranged side by side on the same surface. The area occupied by these can be reduced.

[0085] In addition, the conductive film 113d, a part of the insulating film 133, and a part of the conductive film 113b are laminated. The capacitor element 130 functions as a storage capacitor for the pixel. do.

[0086] An insulating film 136 and an insulating film 134 are provided to cover the transistor 741b. The insulating film 136 functions as a protective film for protecting the transistor 741b. It is preferable that either the insulating film 136 or the insulating film 134 functions as a planarization film. If either one is not necessary, it may not be provided.

[0087] The conductive film 121 is provided on the insulating film 134. The conductive film 121 is The insulating film 136 is electrically connected to the conductive film 113d through an opening formed in the insulating film 136. An insulating film 135 is provided to cover the end of the conductive film 121 and the opening. An EL layer 122R and a conductive film 123 are stacked on the film 135 and the conductive film 121. A protective film 125 is provided on the conductive film 123. The use of the protective film shown in Fig. 1 prevents the progression of deterioration of the display elements 721R, 721G, and 721B. It is possible.

[0088] The conductive film 121 functions as a pixel electrode of the display element 721R. The EL layer 122R functions as an electrode. The EL layer 122R has at least a light-emitting layer.

[0089] The display element 721R is a top-emission type (top-emitter) that emits light to the side opposite to the surface on which it is formed. The conductive film 121 is a conductive film that reflects visible light. The film 123 can be a conductive film that transmits visible light.

[0090] Figures 5(A) and (B) show examples in which EL layers are created separately for display elements that exhibit different colors. The EL layer of each display element has a light-emitting layer that exhibits a different color. .

[0091] The EL layer 122R of the display element 721R has, for example, a red light-emitting layer. As shown above, by creating separate EL layers for display elements that exhibit different colors, It is possible to improve the color purity of the light emitted by the element. In addition, the light extraction efficiency can be improved compared to when a plurality of light-emitting layers are used. The driving voltage can be lowered compared to when a stacked light emitting element that emits white light is used.

[0092] Here, since it can be used for the display element 721R, the display element 721G, the display element 721B, etc. The structure of the light-emitting element will be described.

[0093] FIG. 6(A) shows a case where all layers constituting the EL layer are formed between display elements that exhibit different colors. An example of the case where the data is divided is shown.

[0094] The display element 721R has an EL layer 122R between the conductive film 121 and the conductive film 123. In FIG. 6A, the EL layer 122R is formed by connecting the conductive film 121 side to the carrier injection layer 141R. , a carrier transport layer 142R, a light-emitting layer 143R, a carrier transport layer 144R, and a carrier injection layer It has an inner layer 145R.

[0095] For example, when the conductive film 121 is used as an anode and the conductive film 123 is used as a cathode, the carrier injection layer 1 A material with high hole injection properties is used for the carrier transport layer 41R, and a material with high hole transport properties is used for the carrier transport layer 142R. A material with high electron transport properties is used for the carrier transport layer 144R, and a material with high electron transport properties is used for the carrier injection layer 145 A material with high electron injection properties is used for R. When the anode and the cathode are interchanged, can be replaced.

[0096] Similarly, the EL layer 122B of the display element 721B includes a carrier injection layer 141B, a carrier transport layer 141B, and a a carrier transport layer 144B, a carrier injection layer 145B, and a light emitting layer 143B. The EL layer 122G of the display element 721G includes a carrier injection layer 141G, a carrier The rear transport layer 142G, the light-emitting layer 143G, the carrier transport layer 144G, and the carrier injection layer 1 It has 45G.

[0097] In this way, the EL layer 122R, the EL layer 122B, and the EL layer 122G are each independently By forming them in this way, it is possible to create an optimized device structure. The L layer 122R, the EL layer 122B, and the EL layer 122G are made of different materials. This allows for improvements in color purity, luminous efficiency, light extraction efficiency, etc. It can be extremely high.

[0098] In this example, the thickness of each EL layer is shown to be approximately the same. The thickness of each layer may be different for each display element.

[0099] FIG. 6(B) shows a case where only the light-emitting layer is formed differently between the display elements, and the other layers are used in common. An example of this case is shown.

[0100] A carrier injection layer 141, a carrier transport layer 142, a carrier transport layer 144, and a carrier injection layer 145 are provided.

[0101] With this structure, the manufacturing process can be simplified.

[0102] The carrier injection layer 141, the carrier transport layer 142, the carrier transport layer 144, and the One or more of the carrier injection layers 145 may be separately formed.

[0103] Also, a display element in which a phosphorescent material is applied to the light-emitting layer and a display element in which a fluorescent material is applied to the light-emitting layer are used. When display elements that are not used in common are mixed, layers that are not used in common are created separately, and other layers are used in common. It is preferable to use it throughout.

[0104] FIG. 6C shows an example in which EL layers of the same configuration are used between display elements that exhibit different colors. Specifically, the EL layer 122W that emits white light and the colored film of each display element are combined. 10 shows an example of a configuration in which different colors of light are emitted by combining different colors.

[0105] The display element 721R, the display element 721B, and the display element 721G each have a colored film 15 2R, colored film 152B, or colored film 152G.

[0106] The EL layer 1 of each of the display element 721R, the display element 721B, and the display element 721G The EL layer 22W is provided across different display elements. In addition, the formation process can be simplified compared to when an EL layer is used between display elements that exhibit different colors. Compared to the case where separate layers are created, the design, such as the minimum processing dimensions and alignment accuracy when forming the EL layer, is Since there is no need to consider the in-rule, the distance between adjacent pixels can be made smaller, resulting in higher resolution. It can be done.

[0107] In addition, by using a semi-transmissive and semi-reflective conductive film for the conductive film 123, In this case, the conductive film 121 and the conductive film 122 may have a microcavity (microcavity) structure. 23, an optical adjustment layer that transmits visible light is provided to adjust the optical distance between the It is preferable that the optical adjustment layer has different thicknesses for the display elements of different colors. stomach.

[0108] The combination of the white light emitting EL layer 122, the microcavity structure, and the colored film As a result, light with extremely high color purity can be emitted to the display surface side.

[0109] Figure 6(D) shows a bottom emission type that emits light toward the surface on which it is formed. This shows an example in which a display element is applied. Here, as in FIG. 6(B), each display element 10 shows an example in which only the light-emitting layer is separately formed between the two.

[0110] In FIG. 6D, a conductive film that transmits visible light is used as the conductive film 121, and a conductive film 123 A conductive film that reflects visible light is used for the display element 721R. The display element 721B and the display element 721G each emit light toward the conductive film 121.

[0111] FIG. 6(E) shows an example in which EL layers of the same configuration are used between display elements that exhibit different colors. Specifically, the EL layer 122W that emits white light and the colored film of each display element are combined. 10 also shows an example of a configuration in which different colors of light are emitted.

[0112] FIG. 6E is a modification of FIG. 6C, and includes a display element 721R, a display element 721B, and The display element 721G includes a colored film 152R, a colored film 152B, and a colored film 152G, respectively. on the protective film 125.

[0113] The above is a description of an example of the configuration of the light-emitting element.

[0114] FIG. 5(C) shows a circuit diagram corresponding to the configuration shown in FIG. 5(B). This corresponds to the circuit diagram of a pixel (sub-pixel).

[0115] For example, the gate (conductive film 111) of the transistor 741a is supplied with a gate signal VG. The source or drain of the transistor 741a is electrically connected to a wiring The film 113a is electrically connected to a wiring to which a source signal VS is applied. The potential VH is applied to one of the source and drain of the transistor 741b (the conductive film 113c). The common electrode (conductive film 123) of the display element 721R is electrically connected to the wiring. The potential VL is electrically connected to a wiring to which the potential VL is applied.

[0116] Note that the pixel configuration is not limited to this, and various circuit configurations can be used.

[0117] <Transistor stack structure> Another example of a structure in which two transistors are stacked will be described below. Each of the illustrated configuration examples may be used in appropriate combination with the configuration illustrated in the cross-sectional configuration example of the display device. It is possible.

[0118] <Configuration example 1> FIG. 7A shows an example in which a transistor 741c and a transistor 741d are stacked. be.

[0119] The transistor 741c is a transistor similar to the transistor 741a illustrated in FIG. 5B, but with a second gate. The conductive film 111b functions as a transistor. The insulating film 133 is provided at a position overlapping the semiconductor film 112a, and the insulating film 136 is provided between the insulating film 133 and the insulating film 136. are.

[0120] The transistor 741d is a transistor similar to the transistor 741b illustrated in FIG. 5B, but with a second gate. The conductive film 111c functions as a transistor. The insulating film 136 is provided at a position overlapping with the semiconductor film 112b.

[0121] When a transistor has two gates sandwiching a semiconductor film, the two gates are applied with the same potential. By applying a gate voltage to one of the gate electrodes, the on-state current of the transistor can be increased. By applying a potential to control the threshold voltage and a potential to drive the transistor, The threshold voltage of the transistor can be controlled.

[0122] <Configuration example 2> FIG. 7B shows an example in which a transistor 741e and a transistor 741b are stacked. be.

[0123] The transistor 741e has a gate located above the semiconductor film 112a. It is a top-gate transistor.

[0124] The transistor 741e includes a semiconductor film 112a over an insulating film 731 and a gate insulating film 741b over the semiconductor film 112a. The insulating film 132 is formed on the insulating film 132, and the conductive film 111, the semiconductor film 112a, and the conductive film 111 are formed on the insulating film 132. 1, and a conductive film 113a and a conductive film 113b are formed on the insulating film 137. do.

[0125] The transistor 741e includes a semiconductor film 112a and a conductive film 113a or a conductive film 113b. and the parasitic capacitance between the conductive film 111 and the conductive film 113a or the conductive film 113b. This is preferable because it can reduce

[0126] FIG. 7B shows an example in which the insulating film 132 is formed only in a portion overlapping with the conductive film 111. 7(D), the insulating film 132 covers the end of the semiconductor film 112a. This may also be configured as follows.

[0127] <Configuration example 3> FIG. 7C shows an example in which a transistor 741f and a transistor 741b are stacked. be.

[0128] Transistor 741f acts as a second gate in addition to transistor 741e. The conductive film 111b is connected to the semiconductor film 112a via the insulating film 138. They are arranged one on top of the other.

[0129] FIG. 7C shows an example in which the insulating film 132 is formed only in a portion overlapping with the conductive film 111. 7(E), the insulating film 132 covers the end of the semiconductor film 112a. This may also be configured as follows.

[0130] <Configuration Example 4> FIG. 8A shows an example in which a transistor 741a and a transistor 741g are stacked. be.

[0131] The transistor 741g has a gate above the semiconductor film 112b. It is a top-gate transistor.

[0132] The transistor 741g has a semiconductor film 112b over the insulating film 133 and a semiconductor film 112a over the insulating film 133. An insulating film 139 which functions as a gate insulating film is formed on the insulating film 139, and a conductive film 111b and a semiconductor film are formed on the insulating film 139. An insulating film 136 covering the conductive film 112a and the conductive film 111b, and a conductive film 111b on the insulating film 136 3c and a conductive film 113d.

[0133] The conductive films 113b and 111b are used as gates of the transistor 741g. It works.

[0134] In the example shown in FIG. 8A, the semiconductor film 112b, the conductive film 113b, and one of the insulating films 133 Therefore, the capacitance may be used as a storage capacitance. In this case, it is not necessary to provide a separate capacitive element.

[0135] In FIG. 8A, the insulating film 139 is formed only in a portion overlapping with the conductive film 111b. 7(E) and the like, the end of the semiconductor film 112b is It may be provided in a covered state.

[0136] <Configuration example 5> FIG. 8B shows an example in which a transistor 741e and a transistor 741g are stacked. The above description of the transistor 741e and the transistor 741g can be applied.

[0137] By adopting such a configuration, a display device with extremely reduced parasitic capacitance can be realized.

[0138] <Configuration Example 6> FIG. 8C shows an example in which a transistor 741f and a transistor 741g are stacked. The above description of the transistors 741f and 741g can be applied.

[0139] By adopting such a configuration, a display device with extremely reduced parasitic capacitance can be realized.

[0140] <Configuration Example 7> FIG. 8D shows an example in which the transistor 741f and the transistor 741h are not stacked. The above description of the transistor 741f can be applied.

[0141] The transistor 741h includes a semiconductor film 112b formed on the insulating film 138 and a gate insulating film 112b formed on the semiconductor film 112b. The insulating film 139 is then formed on the insulating film 139. The conductive film 111b, the semiconductor film 112b, and the conductive film 111c are then formed on the insulating film 139. an insulating film 137 covering the first and second electrodes 113b; a conductive film 113c and a conductive film 113d on the insulating film 137; It has.

[0142] The above is a description of an example of a stacked structure of a transistor.

[0143] <About each component> Each of the above components will be described below.

[0144] <Substrate> A material having a flat surface can be used for the substrate of the display device. The substrate on the side from which the light is extracted is made of a material that transmits the light. For example, glass, quartz, ceramic Materials such as aramic, sapphire, and organic resins can be used.

[0145] By using a thin substrate, the display device can be made lighter and thinner. In addition, by using a substrate with a thickness that allows flexibility, a flexible display device can be realized. Cut.

[0146] In addition, the substrate on the side from which light is not extracted does not need to be light-transmitting. In addition to the substrate, a metal substrate or the like can also be used. Since heat can be easily conducted to the body, local temperature rises in the display device can be suppressed, which is preferable. To obtain flexibility and bendability, the thickness of the metal substrate is preferably 10 μm or more and 200 μm or less. It is more preferable that the thickness is 20 μm or more and 50 μm or less.

[0147] The material for the metal substrate is not particularly limited, but examples thereof include aluminum, copper, and nickel. Metals such as nickel, or alloys such as aluminum alloys or stainless steel are preferably used. It is possible.

[0148] In addition, insulating treatment is performed by oxidizing the surface of the metal substrate or forming an insulating film on the surface. For example, a substrate that has been subjected to a coating process such as spin coating or dipping, or an electrodeposition process may be used. The insulating film may be formed by deposition, evaporation, sputtering, or the like. In addition to leaving it in the air or heating it, an oxide film is formed on the surface of the substrate by anodizing or other methods. That's fine.

[0149] Examples of materials that are flexible and transparent to visible light include: Thickness of glass, polyethylene terephthalate (PET), polyethylene naphthalate Polyester resins such as (PEN), polyacrylonitrile resins, polyimide resins, polymers methyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PE S) Resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamide imide resin, polyvinyl chloride resin, polytetrafluoroethylene (PTFE) resin, etc. In particular, it is preferable to use a material with a low thermal expansion coefficient. x10 -6 / K or less polyamide-imide resin, polyimide resin, PET, etc. are preferably used. In addition, a substrate in which glass fiber is impregnated with organic resin or an organic filler is used. It is also possible to use a substrate with a lower thermal expansion coefficient by mixing it with resin. Since the substrate is light in weight, the display device using the substrate can also be made light in weight.

[0150] When the above materials contain fibrous bodies, the fibrous bodies are made of high strength organic or inorganic compounds. High strength fibers are specifically fibers with high tensile modulus or Young's modulus. Representative examples include polyvinyl alcohol fibers, polyester fibers, and polyamide fibers. Mid fiber, polyethylene fiber, aramid fiber, polyparaphenylene benzobisoxide Examples of the fiber include Sasol fiber, glass fiber, and carbon fiber. Examples of glass fibers include those made from glass, S-glass, D-glass, and Q-glass. Alternatively, it is used in the form of a nonwoven fabric, and the structure in which the fibrous body is impregnated with resin and the resin is hardened is formed into a structure. The flexible substrate may be a substrate made of a fiber and a resin. The use of such a structure is preferred because it improves reliability against damage due to bending or local pressure. It's nice.

[0151] Alternatively, glass, metal, or the like that is thin enough to be flexible can also be used as the substrate. Alternatively, a composite material in which glass and a resin material are bonded together with an adhesive may be used.

[0152] A hard coat film (e.g., , silicon nitride, aluminum oxide, etc.), or a film made of a material that can disperse pressure (e.g., In addition, the display element may be laminated with other materials such as a polymer resin (e.g., a methyl methacrylate resin). In order to suppress this, an insulating film with low water permeability may be laminated on a flexible substrate. For example, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, nitride An inorganic insulating material such as aluminum can be used.

[0153] The substrate may be a laminate of multiple films. In particular, a glass substrate is used as the substrate. By using the film, the barrier properties against water and oxygen can be improved, and a highly reliable display device can be obtained. do.

[0154] <Transistor> The transistor is made up of a conductive film serving as a gate electrode, a semiconductor film, and a a conductive film that functions as a drain electrode, a conductive film that functions as a gate insulating film, and The above describes the case where a bottom-gate transistor is used. are.

[0155] Note that the structure of a transistor included in a display device of one embodiment of the present invention is not particularly limited. For example, a planar type transistor or a staggered type transistor may be used. Alternatively, a top gate or bottom gate transistor may be used. Alternatively, gate electrodes may be provided above and below the channel. It may also be used.

[0156] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single-crystal semiconductor, or a semiconductor having a partially crystalline region) If a semiconductor having crystallinity is used, This is preferable because it can suppress deterioration of the resistor characteristics.

[0157] In addition, semiconductor materials used in transistors include, for example, elements of Group 14 (silicon For the semiconductor film, a compound semiconductor or an oxide semiconductor can be used. Typically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, or an oxide containing indium A compound semiconductor or the like can be used.

[0158] In particular, it is preferable to use an oxide semiconductor having a band gap larger than that of silicon. If a semiconductor material with a wider band gap and lower carrier density than silicon is used, This is preferable because it can reduce the current in the off state of the transistor.

[0159] In particular, the semiconductor film has a plurality of crystal portions, and the c-axis of the crystal portions is aligned with the surface on which the semiconductor film is formed. Or, the crystals are oriented approximately perpendicular to the upper surface of the semiconductor film, and grain boundaries are observed between adjacent crystal portions. It is preferable to use an oxide semiconductor that cannot be used.

[0160] Such oxide semiconductors have no grain boundaries, and therefore, they are resistant to bending of the display device. Therefore, cracks are prevented from occurring in the oxide semiconductor film due to the applied force. Such oxide semiconductors are suitable for use in flexible display devices that are used in a curved state. It is possible.

[0161] In addition, by using such a crystalline oxide semiconductor as a semiconductor film, electrical properties can be improved. This suppresses fluctuations in characteristics, resulting in a highly reliable transistor.

[0162] In addition, a transistor using an oxide semiconductor with a wider band gap than silicon is Due to its low off-state current, the charge stored in the capacitor connected in series with the transistor can be maintained for a long period of time. By applying such a transistor to a pixel, It is also possible to stop the driving circuit while maintaining the gradation of the image displayed in each display area. As a result, a display device with extremely reduced power consumption can be realized.

[0163] The semiconductor film may be, for example, at least indium, zinc, and M (aluminum, titanium, gallium). Sm, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium It includes a film expressed as In-M-Zn oxide containing metals such as aluminum or hafnium. Furthermore, it is preferable to reduce variations in electrical characteristics of transistors using the oxide semiconductor. Therefore, it is preferable to include a stabilizer therewith.

[0164] The stabilizer includes the metals listed above under M, such as gallium, tin, and hafnium. Other stabilizers include tungsten, aluminum, and zirconium. are the lanthanides: lanthanum, cerium, praseodymium, neodymium, samarium, Europium, gadolinium, terbium, dysprosium, holmium, erbium, Examples include thulium, ytterbium, and lutetium.

[0165] Examples of oxide semiconductors that form the semiconductor film include In-Ga-Zn oxides, In- Al-Zn oxide, In-Sn-Zn oxide, In-Hf-Zn oxide, In-L a-Zn oxide, In-Ce-Zn oxide, In-Pr-Zn oxide, In-Nd -Zn-based oxides, In-Sm-Zn-based oxides, In-Eu-Zn-based oxides, In-Gd- Zn-based oxide, In-Tb-Zn-based oxide, In-Dy-Zn-based oxide, In-Ho-Z n-based oxides, In-Er-Zn-based oxides, In-Tm-Zn-based oxides, In-Yb-Zn In-based oxides, In-Lu-Zn-based oxides, In-Sn-Ga-Zn-based oxides, In-Hf- Ga-Zn oxide, In-Al-Ga-Zn oxide, In-Sn-Al-Zn oxide In-Sn-Hf-Zn oxides, In-Hf-Al-Zn oxides can be used. can.

[0166] Here, the In-Ga-Zn oxide refers to an oxide having In, Ga, and Zn as its main components. The ratio of In, Ga, and Zn does not matter. Metal elements other than n may be included.

[0167] The semiconductor film and the conductive film may contain the same metal element among the above oxides. By using the same metal element for the conductor film and the conductive film, the manufacturing cost can be reduced. For example, by using a metal oxide target with the same metal composition, the manufacturing cost can be reduced. In addition, the etching gas or etching gas used in processing the semiconductor film and the conductive film can be However, the semiconductor film and the conductive film contain the same metal element. Even if the same material is used, the composition may be different. For example, during the manufacturing process of a transistor or a capacitor, In some cases, metal elements in the film may be released, resulting in a different metal composition.

[0168] The oxide semiconductor constituting the semiconductor film has an energy gap of 2 eV or more, preferably 2 It is preferable that the energy is 0.5 eV or more, and more preferably 3 eV or more. The off-state current of a transistor can be reduced by using an oxide semiconductor with a wide gap. can be done.

[0169] When the oxide semiconductor constituting the semiconductor film is In-M-Zn oxide, The atomic ratio of the metal elements in the sputtering target used to form a film is In≧M It is preferable that Zn≧M is satisfied. The atomic ratios were In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In :M:Zn=3:1:2, 4:2:4.1, In:M:Zn=5:1:7, etc. are preferred. The atomic ratio of the semiconductor film to be formed is determined by the above sputtering temperature as an error. This includes a variation of plus or minus 40% in the atomic ratio of the metal elements contained in the get.

[0170] As the semiconductor film, an oxide semiconductor film with low carrier density is used. , carrier density is 1×10 17 / cm 3 Less than 1 × 10 15 / cm 3 Below, More preferably, 1×10 13 / cm 3 Less than 1×10, more preferably 11 / cm 3 below, More preferably, 1 × 10 10 / cm 3 Less than 1 x 10 -9 / cm 3 More than Such an oxide semiconductor can be a high-purity intrinsic or This results in a low impurity concentration and a high-purity intrinsic oxide semiconductor. Since the density is low, it can be said that the oxide semiconductor has stable characteristics.

[0171] However, the semiconductor characteristics and electrical characteristics (field effect) of the required transistors are not limited to these. It is sufficient to use an appropriate composition depending on the required properties (e.g., the mobility, threshold voltage, etc.). In order to obtain the semiconductor characteristics of a transistor, the carrier density, impurity concentration, and defect density of the semiconductor film are determined. It is preferable to appropriately set the density, atomic ratio of metal element to oxygen, interatomic distance, density, etc. stomach.

[0172] In the oxide semiconductor that makes up the semiconductor film, silicon and carbon, which are group 14 elements, If the semiconductor film contains oxygen, oxygen vacancies increase and the semiconductor film becomes n-type. The concentrations of silicon and carbon in the membrane (obtained by secondary ion mass spectrometry) were measured. x10 18 atoms / cm 3 Less than or equal to 2 x 10 17atoms / cm 3 Below and do.

[0173] In addition, alkali metals and alkaline earth metals generate carriers when bonded to oxide semiconductors. This may result in an increase in the off-state current of the transistor. Alkali metals and alkaline earth metals in biological membranes obtained by secondary ion mass spectrometry. The concentration of 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 Do the following:

[0174] In addition, when nitrogen is contained in the oxide semiconductor that constitutes the semiconductor film, the electrons that are carriers This increases the carrier density and makes it easier to become n-type. Transistors using semiconductors tend to be normally on. The nitrogen concentration obtained by secondary ion mass spectrometry in 18 atoms / cm 3 It is preferable to do the following:

[0175] The semiconductor film may also have a non-single crystal structure, for example. -OS(C-Axis Aligned Crystalline Oxide Sem iconductor, or C-Axis Aligned and AB-pl Anchored Crystalline Oxide Semiconductor ctor), polycrystalline, microcrystalline, or amorphous structures. The amorphous structure has the highest density of defect states, while the CAAC-OS has the lowest density of defect states.

[0176] An oxide semiconductor film with an amorphous structure has, for example, a disordered atomic arrangement and does not contain crystalline components. Alternatively, the amorphous oxide film may have a completely amorphous structure and no crystalline portion. do not have.

[0177] The semiconductor film may have an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAA region, or a crystalline structure region. The film may be a mixed film having two or more of the C-OS region and the single crystal structure region. The composite film may have a single layer structure including two or more of the above-mentioned regions, or a laminate structure. It may have a layer structure.

[0178] The semiconductor film is made of the above-mentioned CAC-OS or CAC-metal oxide. It can be formed by

[0179] Transistors using CAC-OS are highly reliable. The transistor has a high on-current and field-effect mobility, and a low off-current. Therefore, CAC-OS is suitable for various semiconductor devices including displays. It is ideal for semiconductor devices.

[0180] Alternatively, silicon is preferably used as the semiconductor in which the channel of the transistor is formed. Although amorphous silicon may be used as silicon, silicon having crystallinity is particularly preferred. It is preferable to use silicon. For example, microcrystalline silicon, polycrystalline silicon, single crystal silicon, etc. In particular, polycrystalline silicon has a lower temperature than single-crystal silicon. It can be formed without any additional process and has higher field effect mobility and higher reliability than amorphous silicon. By applying such a polycrystalline semiconductor to the pixel, the aperture ratio of the pixel can be improved. Even when an extremely high-resolution display is required, the gate drive circuit and source drive circuit are It is now possible to form circuits and pixels on the same substrate, reducing the number of components that make up electronic devices. It is possible.

[0181] The bottom-gate transistor described in this embodiment can reduce the manufacturing steps. In addition, the use of amorphous silicon in this case is preferable compared to polycrystalline silicon. Since it can be formed at low temperatures, it is suitable for use as a material for wiring and electrodes below the semiconductor film, and as a material for substrates. It is possible to use materials with low heat resistance, which broadens the range of material choices. For example, a glass substrate with an extremely large area can be suitably used. Since the impurity region is easily formed in a self-aligned manner, the characteristics of the transistors are not uniform. In this case, it is particularly preferable to use polycrystalline silicon or single-crystal silicon. It is suitable for use in the following cases:

[0182] <Conductive film> In addition to the gate, source, and drain of the transistor, various wiring and Materials that can be used for conductive films such as electrodes include aluminum, titanium, chromium, and Aluminum, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or titanium Examples of such materials include metals such as tungsten, and alloys containing tungsten as the main component. Films containing these materials can be used as single layers or as laminate structures. For example, silicon a single-layer structure of an aluminum film containing titanium; a two-layer structure of an aluminum film laminated on a titanium film; Two-layer structure with aluminum film laminated on copper-magnesium-aluminum film Two-layer structure with copper film laminated on alloy film, two-layer structure with copper film laminated on titanium film, tungsten Two-layer structure with copper film laminated on silicon film, titanium film or titanium nitride film and aluminum film laminated on top of that A titanium film or a copper film is laminated, and a titanium film or a titanium nitride film is further formed on the aluminum film or a copper film. Three-layer structure: a molybdenum film or molybdenum nitride film, and an aluminum film or The copper film is laminated on top of which a molybdenum film or molybdenum nitride film is formed. It is also possible to use oxides such as indium oxide, tin oxide, or zinc oxide. Furthermore, copper containing manganese is preferably used because it improves the controllability of the shape by etching. stomach.

[0183] Examples of the conductive material having light-transmitting properties include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as indium zinc oxide, zinc oxide, and gallium-doped zinc oxide, or Graphene can be used. Alternatively, gold, silver, platinum, magnesium, nickel, tantalum, etc. such as tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium Metallic materials and alloy materials containing such metallic materials can be used. Alternatively, a metal material, an alloy material (or a combination thereof) may be used. When using these nitrides, it is sufficient to make them thin enough to have light transmission properties. A laminated film of materials can be used as the conductive film. For example, a silver-magnesium alloy and an insulator can be used. It is preferable to use a laminated film of tin oxide or the like, since the conductivity can be increased. These include conductive films such as various wirings and electrodes that make up the display device, and conductive films that display elements have. It can also be used for conductive films (conductive films that function as pixel electrodes or common electrodes).

[0184] <Insulating film> Examples of insulating materials that can be used for each insulating film include acrylic and epoxy. Resins, resins with siloxane bonds (e.g., silicone resins), silicon oxide, acid Inorganic insulating materials such as silicon nitride, silicon oxynitride, silicon nitride, and aluminum oxide Fees can also be used.

[0185] In addition, the light emitting element is preferably provided between a pair of insulating films with low water permeability. This makes it possible to prevent impurities such as water from entering the light emitting element, and to prevent a decrease in the reliability of the device. It can be suppressed.

[0186] As insulating films with low water permeability, films containing nitrogen and silicon such as silicon nitride film and silicon nitride oxide film are used. and films containing nitrogen and aluminum, such as an aluminum nitride film. A silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may also be used.

[0187] For example, the water vapor permeation rate of a low-permeability insulating film is 1×10 -5 [g / (m 2 ·day) ] or less, preferably 1 × 10 -6 [g / (m 2 ·day)] or less, preferably 1 × 1 0 -7 [g / (m 2 ·day)] or less, more preferably 1 × 10 -8 [g / (m 2 ·d ay)] below.

[0188] In addition, the protective film shown in Embodiment 1 can be used as an insulating film included in a display device. do.

[0189] <Light-emitting element> The light emitting element can be a self-luminous element, which can be illuminated by current or voltage. This category includes devices whose brightness is controlled. For example, LEDs (Light Emitting Diodes). Electroluminescent diodes, organic EL elements, inorganic EL elements, etc. can be used.

[0190] Light-emitting elements are available in top-emission, bottom-emission, and dual-emission types. The electrode on the light extraction side uses a conductive film that transmits visible light. For the electrode on the side where light is not extracted, it is preferable to use a conductive film that reflects visible light.

[0191] The EL layer has at least a light-emitting layer. The EL layer has a hole-injecting layer as a layer other than the light-emitting layer. high hole-transporting material, hole-blocking material, high electron-transporting material, electron injection materials with high electron transporting and hole transporting properties, or bipolar materials (materials with high electron transporting and hole transporting properties), etc. The film may further include a layer containing a metal oxide.

[0192] The EL layer can be made of either low molecular weight compounds or high molecular weight compounds. The layers constituting the EL layer may each be formed by a deposition method (including a vacuum deposition method). The layer can be formed by a method such as a transfer method, a printing method, an ink jet method, or a coating method.

[0193] When a voltage higher than the threshold voltage of the light-emitting element is applied between the cathode and anode, the EL layer is charged from the anode side. Holes are injected from the cathode side, and electrons are injected from the cathode side. The injected electrons and holes are The luminescent material contained in the EL layer emits light.

[0194] When a white light emitting element is used as the light emitting element, two or more types of light emitting elements are used in the EL layer. For example, it is preferable to use a configuration in which two or more luminescent materials each emit light of a complementary color. White light can be obtained by selecting a luminescent material so that the following relationship is established. Luminescent materials that emit light in R (red), G (green), B (blue), Y (yellow), O (orange), etc. Or among luminescent materials that emit light containing spectral components of two or more colors of R, G, and B, It is preferable that the spectrum of light emitted from the light-emitting element is in the visible light region. A light-emitting element having two or more peaks within a wavelength range (for example, 350 nm to 750 nm) It is preferable to apply the light emitting spectrum of the material having a peak in the yellow wavelength region. is preferably a material that also has spectral components in the green and red wavelength regions.

[0195] The EL layer is made up of a light-emitting layer containing a light-emitting material that emits one color and a light-emitting layer containing a light-emitting material that emits another color. For example, a plurality of light-emitting layers in the EL layer are preferably stacked. The layers may be stacked in contact with each other or separated by an area that does not contain any light-emitting material. For example, a fluorescent-emitting layer or a phosphorescent-emitting layer may be laminated between the fluorescent-emitting layer and the phosphorescent-emitting layer. The phosphorescent layer contains the same materials (for example, a host material and an assist material) as the phosphorescent layer, and A region that does not contain any optical material may be provided. This makes it easier to manufacture the light-emitting element. Furthermore, the driving voltage is reduced.

[0196] The light-emitting element may be a single element having one EL layer, or a light-emitting element having multiple EL layers. and a charge generating layer may be laminated therebetween to form a tandem element.

[0197] The conductive film that transmits visible light is made of, for example, indium oxide, indium tin oxide, indium tin oxide, It can be formed using zinc oxide, zinc oxide, zinc oxide doped with gallium, etc. Also, gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum , iron, cobalt, copper, palladium, titanium, and other metal materials, including these metal materials Alloys or nitrides of these metal materials (for example, titanium nitride) can also be used to the extent that they have translucency. It can be used by forming it thin. Also, a laminated film of the above materials can be used as a conductive film. For example, a laminated film of an alloy of silver and magnesium and indium tin oxide can be used. In this case, it is preferable to use graphene or the like, since the conductivity can be increased. .

[0198] The conductive film that reflects visible light is made of, for example, aluminum, gold, platinum, silver, nickel, tungsten, or the like. Metallic materials such as stainless steel, chromium, molybdenum, iron, cobalt, copper, or palladium, or In addition, the above metal materials and alloys may contain lanthanum. Tungsten, neodymium, germanium, etc. may be added. Titanium, nickel Alternatively, an alloy containing neodymium and aluminum (aluminum alloy) may be used. Alternatively, an alloy containing copper, palladium, magnesium, and silver may be used. Furthermore, when in contact with the aluminum film or aluminum alloy film, By laminating a metal film or a metal oxide film on the surface, oxidation can be suppressed. Examples of materials for the metal film and metal oxide film include titanium and titanium oxide. The conductive film that transmits visible light may be laminated with a film made of a metal material. For example, a film made of silver and indium may be laminated. laminated films of silver-magnesium alloy and indium tin oxide, etc. It can be used.

[0199] The electrodes may be formed by vapor deposition or sputtering. Forming using ejection methods such as ink jet printing, printing methods such as screen printing, or plating methods It can be achieved.

[0200] The above-mentioned light-emitting layer, the substance having a high hole injection property, the substance having a high hole transport property, and the electrode The layer containing a substance having a high electron transporting property, a substance having a high electron injecting property, a bipolar substance, or the like is These include inorganic compounds such as quantum dots and polymer compounds (oligomers, dendrimers, polymers, etc.). For example, by using quantum dots in the light-emitting layer, It can also function as

[0201] The quantum dot materials include colloidal quantum dot materials, alloy quantum dot materials, Core-shell type quantum dot materials, core type quantum dot materials, etc. can be used. , materials containing elements from groups 12 and 16, 13 and 15, or 14 and 16 Alternatively, cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, Quantum dot materials containing elements such as lead, gallium, arsenic, and aluminum may also be used.

[0202] <Adhesive> Adhesives include light-curing adhesives such as ultraviolet curing adhesives, reaction-curing adhesives, and heat-curing adhesives. Various curing adhesives such as adhesives and anaerobic adhesives can be used. Epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, E VA (ethylene vinyl acetate) resin, etc. In particular, the moisture permeability of epoxy resin, etc. A material with low viscosity is preferable. Two-component resin may also be used. It may be used.

[0203] The resin may also contain a desiccant. For example, an alkaline earth metal oxide (an acid The material used is one that absorbs moisture by chemical adsorption, such as calcium oxide or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb water by physical adsorption. If a desiccant is included, impurities such as moisture will not penetrate into the element. This is preferable because it can suppress the occurrence of the problem and improve the reliability of the display device.

[0204] In addition, by mixing a filler with a high refractive index or a light scattering material into the resin, it is possible to improve the light extraction efficiency. For example, titanium oxide, barium oxide, zeolite, Ruthenium and the like can be used.

[0205] <Connection parts> The connecting material is anisotropic conductive film (ACF). Conductive Film) and Anisotropic Conductive Paste (ACP) Conductive Paste) can be used.

[0206] <Colored film> Materials that can be used for the colored film include metal materials, resin materials, pigments, and dyes. Examples include resin materials.

[0207] <Light-shielding film> Materials that can be used as the light-shielding film include carbon black, titanium black, Examples of the material include metals, metal oxides, and composite oxides including solid solutions of multiple metal oxides. The film may be a film containing a resin material, or may be a thin film made of an inorganic material such as a metal. In addition, a laminated film containing a colored film material can be used as the light-shielding film. A film containing a material used for a colored film that transmits light, and a material used for a colored film that transmits light of a different color. By using the same material for the colored film and the light-shielding film, a laminated structure with a film containing This is preferable because it allows the use of common equipment and simplifies the process.

[0208] This concludes the explanation of each component.

[0209] <Production method> Here, an example of a method for manufacturing a display device using a flexible substrate will be described.

[0210] Here, the materials include display elements, circuits, wiring, electrodes, optical components such as colored films and light-shielding films, and insulating films. For example, the element layer includes a display element. In addition to display elements, wiring electrically connecting to display elements, transistors used in pixels and circuits, etc. The device may include the following elements:

[0211] In addition, in this case, at the stage where the display element is completed (the manufacturing process is completed), the element layer is The supporting and flexible member is called a substrate. For example, the substrate may have a thickness of This also includes extremely thin films with a thickness of 10 nm or more and 300 μm or less.

[0212] A typical method for forming an element layer on a flexible substrate having an insulating surface is to There are two methods as follows: One is to form the element layer directly on the substrate. The other method is to form an element layer on a support base material different from the substrate, and then peel the element layer from the support base material. The method is to transfer the device layer to the substrate. In addition to the above method, an element layer is formed on a non-flexible substrate, and the substrate is thinned by polishing or the like. There is also a method for making the material flexible by using a

[0213] If the material constituting the substrate is heat resistant to the heat applied in the process of forming the element layer, It is preferable to form the element layer directly on the substrate, since this simplifies the process. When the element layer is formed while the plate is fixed to the support substrate, it is difficult to transport the plate within and between devices. This is preferable because it is easier.

[0214] In addition, when a method is used in which an element layer is formed on a support base material and then transferred to a substrate, the support material is first A release film and an insulating film are laminated on the support substrate, and an element layer is formed on the insulating film. The element layer is then transferred to the substrate. A material that causes peeling at the interface between the release film and the insulating film or within the release film may be selected. In this method, a highly heat-resistant material is used for the support substrate and the release film, and the element layer is formed. This allows for an increase in the upper limit of the temperature during the formation of a device layer, resulting in a device with higher reliability. This is preferable because it is possible.

[0215] For example, a film containing a high melting point metal material such as tungsten as a peeling film and a film containing the metal material A film containing an oxide is laminated, and silicon oxide or silicon nitride is used as an insulating film on the peeling film. It is preferable to use a film in which a plurality of layers of silicon oxynitride, silicon nitride oxide, or the like are stacked. In this specification, an oxynitride is a compound having a higher oxygen content than nitrogen content. Nitrogen oxide refers to a material that contains more nitrogen than oxygen. Point.

[0216] The element layer and the support substrate can be separated by applying a mechanical force or by peeling off a peeling film. Examples include etching or infiltrating the peeled interface with a liquid. Alternatively, the difference in the thermal expansion coefficients of the two layers that form the peel interface can be utilized to heat or cool the material. The peeling may be performed by

[0217] Furthermore, if peeling is possible at the interface between the support substrate and the insulating film, it is not necessary to provide a peeling film.

[0218] For example, glass is used as the support substrate, and an organic resin such as polyimide is used as the insulating film. At this time, a part of the organic resin is locally heated using a laser beam or the like. Or, peeling by physically cutting or penetrating part of the organic resin with a sharp object. Alternatively, a starting point may be formed, and peeling may be carried out at the interface between the glass and the organic resin.

[0219] Alternatively, a heat generating member is provided between the support substrate and the insulating film made of organic resin, and the heat generating member is heated. By heating, the heat generating member may be peeled off at the interface between the heat generating member and the insulating film. are materials that generate heat by passing an electric current through them, materials that generate heat by absorbing light, and materials that generate heat by applying a magnetic field. Various materials can be used, such as materials that generate heat when a voltage is applied. The material can be selected from semiconductors, metals, and insulators.

[0220] In the above-mentioned method, the insulating film made of organic resin is used as a substrate after peeling. It is possible.

[0221] The above is a description of the method for manufacturing a flexible display device.

[0222] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0223] (Fourth embodiment) In this embodiment, a hybrid display which is an example of a display device according to one embodiment of the present invention will be described. This article explains:

[0224] The hybrid display method is a method of displaying multiple lights in the same pixel or the same sub-pixel. A hybrid display is a method of displaying text and / or images. A plurality of lights are displayed in the same pixel or the same sub-pixel included in the display unit, and characters and / or images are displayed. It is a collection that displays

[0225] As an example of a hybrid display method, a first light and a second light are used in the same pixel or the same sub-pixel. There is a method of displaying the first light by changing the display timing of the second light. In the same sub-pixel, the same color tone (red, green, or blue, or cyan, magenta, or yellow) The first light and the second light (either one of the four) are displayed simultaneously, and the display unit displays characters or / and images can be displayed.

[0226] As an example of a hybrid display method, a method is used in which reflected light and spontaneous light are displayed in the same pixel or the same subpixel. There is a method to display it with pixels. Reflected light and self-luminous light of the same color (e.g., OLED (Organic Light Emitting Diode) nic Light Emitting Diode (LED light, etc.) on the same pixel or can be displayed simultaneously in the same sub-pixel.

[0227] In the hybrid display method, the pixels are not the same pixel or the same subpixel, but adjacent pixels. A plurality of light beams may be displayed in a pixel or adjacent sub-pixels. Simultaneous display of the first and second lights means that the first and second lights are displayed simultaneously to the extent that flicker is not perceptible to the human eye. If the human eye does not perceive flickering, it is considered to be the first The display period of the first light and the display period of the second light may be shifted from each other.

[0228] Hybrid displays also have multiple display elements in the same pixel or subpixel. It is a group of display elements, each of which displays during the same period. A hybrid display uses multiple display elements and a display in the same pixel or the same subpixel. The active elements include switches, transistors, thin film transistors, and the like. Since an active element is connected to each of the multiple display elements, The display of each of the display elements can be controlled individually.

[0229] In this specification, the term "a device that satisfies one or more of the above-mentioned expressions" is used. This is called a hybrid display.

[0230] A hybrid display has multiple display elements in the same pixel or subpixel. The plurality of display elements may include, for example, reflective elements that reflect light and transparent elements that emit light. The reflective element and the self-luminous element are controlled independently. The hybrid display can utilize both reflected light and self-luminous light in the display area. It has the function of displaying characters and / or images using either or both of the above.

[0231] A display device according to one embodiment of the present invention has a pixel provided with a first display element that reflects visible light. Alternatively, the display device may have a pixel provided with a second display element that emits visible light. Alternatively, a pixel having a first display element and a second display element may be provided. Cut.

[0232] In this embodiment, a first display element that reflects visible light and a second display element that emits visible light are used. A display device having a display device and a display element will be described.

[0233] The display device includes a first light reflected by a first display element and a second light emitted by a second display element. The display device has a function to display an image by using either one or both of the above. is the ratio of the amount of first light reflected by the first display element to the amount of second light emitted by the second display element. By controlling the amount of each, it has the function of expressing gradation.

[0234] The display device also expresses gradation by controlling the amount of light reflected by the first display element. The gradation is expressed by controlling the amount of light emitted from the first pixel and the second display element. It is preferable to have a configuration including a second pixel. The first pixel and the second pixel are, for example, A plurality of these are arranged in a matrix to form the display unit.

[0235] The first pixels and the second pixels are arranged in the display area in the same number and at the same pitch. In this case, it is preferable that the adjacent first pixel and second pixel are combined to form a pixel unit. As a result, an image displayed only by a plurality of first pixels can be obtained, as will be described later. an image displayed only by a plurality of second pixels, and an image displayed only by a plurality of first pixels and a plurality of second pixels. Each of the two pixel-displayed images can be displayed in the same display area.

[0236] The first display element of the first pixel may be an element that reflects external light to display an image. Such devices do not have a light source, so they consume very little power when displaying. This makes it possible to

[0237] A reflective liquid crystal element can be typically used as the first display element. As a display element, a shutter-type MEMS (Micro Electro Mechanical Systems) MEMS elements, optical interference type MEMS elements, microcapsules, electrophoresis, electrowetting, electronic liquid powder (registered trademark), etc. An element to which the above is applied can be used.

[0238] The second display element of the second pixel has a light source and displays an image using light from the light source. In particular, a device that emits light from a luminescent substance by applying an electric field can be used. It is preferable to use electroluminescent devices that can be extracted. The brightness and chromaticity of the light emitted from the LED are not affected by external light, resulting in high color reproducibility (wide color gamut). It is possible to provide a high contrast, i.e., a vivid display.

[0239] The second display element may be, for example, an OLED or an LED (Light Emitting Diode). ode), QLED(Quantum-dot Light Emitting Dio) Alternatively, a self-luminous light-emitting element such as a semiconductor laser can be used. The display element has a backlight as a light source and a transmitted light from the backlight. Alternatively, a combination of a transparent liquid crystal element for controlling the amount of light may be used.

[0240] The first pixel may be a sub-pixel that exhibits, for example, white (W), or a sub-pixel that exhibits, for example, red (R), green (G), The pixel may have sub-pixels that emit light of three colors, i.e., blue (B), green (C), and blue (B). Similarly, the second pixel may have a sub-pixel that exhibits, for example, white (W), or a sub-pixel that exhibits, for example, red (R), green (G), or The configuration can be such that the sub-pixels emit light of three colors: red (A), green (G), and blue (B). The sub-pixels of each of the first pixel and the second pixel may have four or more colors. The more types of sub-pixels there are, the more power consumption can be reduced and the better color reproducibility can be achieved. This can be done.

[0241] One aspect of the present invention is a first mode in which an image is displayed by a first pixel, a second mode in which an image is displayed by a second pixel, and a third mode in which an image is displayed by a third pixel. and a third mode in which an image is displayed using the first pixel and the second pixel. In addition, different image signals can be applied to the first pixel and the second pixel. You can also input and display the composite image.

[0242] The first mode is a mode in which an image is displayed using light reflected by the first display element. The first mode does not require a light source, so it is a driving mode with extremely low power consumption. For example, This is effective when the illuminance of the external light is sufficiently high and the external light is white light or light close to white light. Mode 1 is a display mode suitable for displaying text information such as books and documents. In addition, because it uses reflected light, it is easy on the eyes and reduces eye fatigue. It has an effect.

[0243] In the second mode, an image is displayed using light emitted by the second display element. Therefore, it is extremely vivid (high contrast and color) regardless of the illuminance or chromaticity of external light. For example, it is possible to display images with high reproducibility when the external light intensity is extremely low, such as at night or in a dark room. This is effective when the external light is low and the display is too bright. To prevent this, the second mode reduces the brightness of the display. This not only reduces glare but also reduces power consumption. The second mode is for displaying vivid images and smooth videos. It is the appropriate mode.

[0244] In the third mode, both the reflected light from the first display element and the emitted light from the second display element are Specifically, the light emitted by the first pixel and the light emitted by the second pixel are used to display the image. The light emitted by the first pixel and the adjacent second pixel are mixed together to produce a single color. It provides a more vivid display than the first mode, while using less power than the second mode. For example, under indoor lighting or in the morning or evening, when the illuminance of external light is relatively high, This is effective when the brightness is low or when the chromaticity of the external light is not white.

[0245] Hereinafter, a more specific example of one embodiment of the present invention will be described with reference to the drawings.

[0246] [Example of display device configuration]

[0247] FIG. 9 illustrates a display region 70 included in a display device of one embodiment of the present invention. The area 70 has a plurality of pixel units 75 arranged in a matrix. 5 has pixel 76 and pixel 77.

[0248] In FIG. 9, pixel 76 and pixel 77 are red (R), green (G), and blue (B) pixels, respectively. An example is shown in which display elements corresponding to three colors are provided.

[0249] The pixel 76 is made up of a display element 76R corresponding to red (R) and a display element 76G corresponding to green (G). 6G, and a display element 76B corresponding to blue (B). are second display elements that utilize light from a light source.

[0250] The pixel 77 includes a display element 77R corresponding to red (R) and a display element 77G corresponding to green (G). 7G, and a display element 77B corresponding to blue (B). are first display elements that utilize reflection of external light.

[0251] The above is a description of an example of the configuration of the display device.

[0252] [Pixel unit configuration example] Next, the pixel unit 75 will be described with reference to FIGS. 10A, 10B, and 10C are schematic diagrams showing configuration examples of the pixel unit 75. FIG.

[0253] The pixel 76 includes a display element 76R, a display element 76G, and a display element 76B. 6R has a light source and is a gradation corresponding to red included in the second gradation value input to the pixel 76. The display element 76G emits red light R2 with a brightness corresponding to the value of the red light R2 to the display surface side. Similarly, B emits green light G2 or blue light B2 toward the display surface side.

[0254] The pixel 77 includes a display element 77R, a display element 77G, and a display element 77B. 7R is a gradation that reflects external light and corresponds to red included in the first gradation value input to pixel 77. The red light R1 having a brightness corresponding to the adjustment value is emitted toward the display surface. Similarly, 7B emits green light G1 or blue light B1 toward the display surface side.

[0255] [First mode] FIG. 10A shows a display element 77R, a display element 77G, and a display element 77B that reflect external light. As shown in FIG. 10(A), the pixel The unit 75 does not drive the pixel 76 when, for example, the illuminance of the external light is sufficiently high. By mixing only the light from pixel 77 (light R1, light G1, and light B1), It is also possible to emit light 79 of a specific color onto the display surface side. This allows for extremely low power consumption driving. It is possible to carry out actions.

[0256] [Second mode] FIG. 10B shows a state in which the display elements 76R, 76G, and 76B are driven to display an image. 10B shows an example of an operation mode for displaying the pixel unit 75. For example, when the illuminance of external light is extremely low, pixel 77 is not driven and pixel 76 is driven. By mixing only these lights (light R2, light G2, and light B2), a light of a given color is obtained. 9 can be projected onto the display surface, which allows for a vivid display. In addition, by lowering the brightness when the illuminance of external light is low, the glare felt by the user can be reduced. Both can reduce power consumption.

[0257] [Third mode] FIG. 10C shows a display element 77R, a display element 77G, and a display element 77B that reflect external light. , and drive the light-emitting display elements 76R, 76G, and 76B to display an image. 10C shows an example of an operation mode for displaying the pixel unit 75. By mixing six lights, light R1, light G1, light B1, light R2, light G2, and light B2, This allows light 79 of a predetermined color to be emitted toward the display surface.

[0258] Therefore, the display device shown in this embodiment has a light-emitting display element and a reflective display element. For example, a reflective display element may be used. When the display area 70 is being displayed, the selected area is displayed using a light-emitting display element. In addition, when the display area 70 is displayed using the light-emitting display element, the display area 70 can be displayed using the reflective display element. The selected area may be displayed on a display element. Alternatively, the grayscale data of a reflective display element may be changed. The selected area may be displayed by changing the grayscale data of the light-emitting display element. The selected area may be displayed by

[0259] The above is a description of an example of the configuration of the pixel unit 75.

[0260] Next, a specific example of the configuration of a hybrid display will be described. The display device has both a reflective liquid crystal element and a light-emitting element, and can operate in both a transmissive mode and a reflective mode. It is a display device that can display the above.

[0261] [Configuration example] 11A is a block diagram showing an example of the configuration of the display device 400. The display unit 761b has a plurality of pixels 410 arranged in a matrix. The device 400 includes a circuit GD and a circuit SD. Also, a plurality of pixels 41 arranged in a direction R are 0, a plurality of wirings GD1, a plurality of wirings GD2, a plurality of wirings AN electrically connected to the circuit GD O, and a plurality of wirings C SCOM. The wiring S1 and the wiring S2 are electrically connected to the wiring SD.

[0262] For simplicity, a configuration having one circuit GD and one circuit SD is shown here. A circuit GD and a circuit SD for driving a crystal element, and a circuit GD and a circuit SD for driving a light-emitting element. may be provided separately.

[0263] The pixel 410 has a reflective liquid crystal element and a light emitting element. The substrate and the light-emitting element have overlapping portions.

[0264] 11B1 shows a structural example of the conductive film 311b included in the pixel 410. b functions as a reflective electrode of the liquid crystal element in the pixel 410. An opening 451 is provided.

[0265] In FIG. 11B1, the light-emitting element 360 located in the region overlapping with the conductive film 311b is indicated by a dashed line. The light-emitting element 360 is disposed so as to overlap with the opening 451 of the conductive film 311b. As a result, the light emitted by the light emitting element 360 is emitted to the display surface side through the opening 451. can be.

[0266] In FIG. 11(B1), pixels 410 adjacent in the direction R correspond to different colors. At this time, as shown in FIG. 11(B1), the openings 4 51 are provided at different positions on the conductive film 311b so that they are not arranged in a line. This is preferable. The two light emitting elements 360 can be spaced apart, and the light emitting elements 360 can emit light. The phenomenon (also called light leakage) where light from a pixel enters the colored film of an adjacent pixel 410 is prevented. In addition, two adjacent light emitting elements 360 can be arranged apart from each other. Therefore, even when the EL layer of the light emitting element 360 is separately formed using a shielding mask or the like, high This makes it possible to realize a display device with high resolution.

[0267] Alternatively, an arrangement such as that shown in FIG. 11(B2) may be used.

[0268] If the ratio of the total area of ​​the openings 451 to the total area of ​​the non-openings is too large, the liquid crystal element may not be used. In addition, the ratio of the total area of ​​the openings 451 to the total area of ​​the non-openings If the value is too small, the display using the light emitting element 360 will be too dark.

[0269] In addition, the area of ​​the opening 451 provided in the conductive film 311b functioning as a reflective electrode is too small. This reduces the efficiency of light extraction from the light emitted by the light emitting element 360.

[0270] The shape of the opening 451 may be, for example, a polygon, a rectangle, an ellipse, a circle, a cross, or the like. It may also be in the form of thin stripes, slits, or a checkered pattern. The apertures 451 may be arranged close to adjacent pixels. Preferably, the apertures 451 are arranged so that they display the same color. This arrangement makes it possible to suppress light leakage.

[0271] [Circuit configuration example] 12 is a circuit diagram showing an example of the configuration of a pixel 410. In FIG. 12, two adjacent pixels 9. The difference from FIG. 9 is that image data is written to the capacitance element of the pixel circuit. 1 shows an example in which wiring S1 and wiring S2 are inserted.

[0272] The pixel 410 includes a switch SW1, a capacitance element C1, a liquid crystal element 340, a switch SW2, and a transistor. The pixel 410 includes a transistor M, a capacitor C2, and a light-emitting element 360. Wiring GD1, wiring GD3, wiring ANO, wiring CSCOM, wiring S1, and wiring S2 are electrically 12, the wiring VCO M1 and a wiring VCOM2 electrically connected to the light emitting element 360 are shown.

[0273] FIG. 12 shows an example in which transistors are used for the switches SW1 and SW2. It shows.

[0274] The switch SW1 has a gate connected to the wiring GD3 and a source or drain connected to the wiring GD4. S1, and the other of the source and drain is connected to one electrode of the capacitance element C1 and the liquid crystal element The other electrode of the capacitance element C1 is connected to the wiring CSCOM. The other electrode of the liquid crystal element 340 is connected to the wiring VCOM1.

[0275] The switch SW2 has a gate connected to the wiring GD1 and a source or drain The other of the source and drain is connected to one electrode of the capacitance element C2, The other electrode of the capacitance element C2 is connected to the wiring CSCOM. The other of the source and the drain of the transistor M is connected to one of the light emitting elements 360. The other electrode of the light emitting element 360 is connected to the wiring VCOM2. There are.

[0276] In FIG. 12, a transistor M has two gates that sandwich a semiconductor, and these are connected to form a This increases the current that the transistor M can pass. It is possible.

[0277] A signal for controlling the switch SW1 to a conductive state or a non-conductive state is applied to the wiring GD3. A predetermined potential can be applied to the wiring VCOM1. A signal for controlling the alignment state of the liquid crystal of the liquid crystal element 340 can be applied. A predetermined potential can be applied to the OM.

[0278] A signal for controlling the switch SW2 to a conductive state or a non-conductive state is applied to the wiring GD1. A potential difference that causes the light emitting element 360 to emit light is generated between the wiring VCOM2 and the wiring ANO. The wiring S2 can be connected to a potential that controls the conduction state of the transistor M. A signal to control the

[0279] For example, when a reflective mode display is performed, the pixel 410 shown in FIG. and a signal applied to the wiring S1, and displays the image by optical modulation using the liquid crystal element 340. In addition, when displaying in a transmissive mode, the voltages given to the wiring GD1 and wiring S2 are The light emitting element 360 can be driven by a signal to emit light for display. When driving in this mode, the wiring GD1, the wiring GD3, the wiring S1 and the wiring S2 are It can be driven by a signal applied to it.

[0280] In FIG. 12, one pixel 410 includes one liquid crystal element 340 and one light emitting element 360. 13A shows an example in which one pixel 410 has one The liquid crystal element 340 and four light-emitting elements 360 (light-emitting elements 360r, 360g, 360b, 360c) An example with a 60w rating is shown.

[0281] In FIG. 13A, in addition to the example of FIG. 12, a line GD4 and a line S3 are connected to the pixel 410. It is being done.

[0282] In the example shown in FIG. 13A, for example, four light emitting elements 360r, 360g, and The light-emitting element 360b and the light-emitting element 360w are respectively red (R), green (G), and blue (B). A light-emitting element that exhibits white (W) can be used. In this case, a reflective liquid crystal element that exhibits white color can be used. When the display is in transmissive mode, a white display with high reflectivity can be achieved. When this is done, a display with high color rendering can be achieved with low power consumption.

[0283] 13B shows an example of the configuration of a pixel 410. The pixel 410 has an electrode 31 The light emitting element 360w overlaps with the opening of the electrode 311, and the light emitting element 360w is disposed around the electrode 311. The light emitting element 360r, the light emitting element 360g, and the light emitting element 360b. It is preferable that the light emitting element 360g and the light emitting element 360b have approximately the same light emitting area.

[0284] [Display panel configuration example] 14 is a perspective schematic diagram of a display device 300 according to one embodiment of the present invention. The appearance is the same as the display device 710 shown in FIG.

[0285] 14 shows an enlarged view of a part of the display unit 761b. The conductive film 311b of the display element is arranged in a matrix. The transparent electrode 340 has a function of reflecting visible light and functions as a reflective electrode of the liquid crystal element 340 described later.

[0286] 14, the conductive film 311b has an opening. The light emitting element 360 is disposed on the substrate 751a side. The light is emitted toward the substrate 752a through the opening 11b.

[0287] An input device 366 can be provided on the substrate 752a. A capacitive touch sensor may be provided over the display portion 761b. A touch sensor may be provided between the substrate 752a and the substrate 751a. When a touch sensor is provided between the touch panel and the 751a, a capacitive touch sensor or an optical touch sensor can be used. An optical touch sensor using an electric conversion element may also be applied.

[0288] [Cross-section example 1] FIG. 15 shows a part of the area including the FPC 763a, the circuit section 7, and the like of the display device shown in FIG. When a part of the area including the display portion 62a and a part of the area including the display portion 761b are cut out, An example of a cross section is shown.

[0289] The display device has an insulating film 220 between the substrate 751a and the substrate 752a. Between 751a and the insulating film 220, the light emitting element 360, the transistor 201, and the transistor 2 05, transistor 206, colored film 174, etc. Also, the insulating film 220 and the substrate 752 The liquid crystal element 340, the colored film 175, etc. are disposed between the substrate 752a and the insulating film 22. 0 is bonded via adhesive 183, and the substrate 751a and the insulating film 220 are bonded via adhesive 182. It is glued in place.

[0290] The transistor 206 is electrically connected to the liquid crystal element 340, and the transistor 205 is The transistor 205 and the transistor 206 are electrically connected to the optical element 360. Since the insulating film 220 is also formed on the surface of the substrate 751a side, these can be formed using the same process. It can be made by

[0291] The substrate 752a is provided with a colored film 175, a light-shielding film 176, an insulating film 165, and a liquid crystal element 340. A conductive film 313 which functions as a common electrode, an alignment film 173b, an insulating film 167, etc. are provided. The insulating film 167 acts as a spacer to maintain the cell gap of the liquid crystal element 340. It works.

[0292] The insulating film 220 is provided on the substrate 751a side with an insulating film 211, an insulating film 212, an insulating film 213, and an insulating film 214. The insulating film 211 is provided with insulating films such as an insulating film 214 and an insulating film 215. The insulating film 212, the insulating film 213, and the insulating film 214 function as a gate insulating film of a transistor. The insulating film 214 is provided to cover each transistor. The insulating film 214 and the insulating film 215 function as a planarizing film. In this example, insulating films 212 and 213 are used as insulating films for covering the transistors and the like. Although the insulating film 214 has three layers, the present invention is not limited to this and may have four or more layers. The insulating film 2 may be a single layer or a double layer. 14 may not be provided if it is not necessary.

[0293] In addition, the transistors 201, 205, and 206 are partially A conductive film 221 functions as a gate, and a conductive film 221 partially functions as a source or drain. 22 and a semiconductor film 231. Here, the same conductive film is processed into a plurality of layers. , are marked with the same hatching pattern.

[0294] The liquid crystal element 340 is a reflective liquid crystal element. The liquid crystal element 340 is made up of a conductive film 370, a liquid crystal 3 12, and the conductive film 313. A conductive film 311b that reflects visible light is provided on the side of the conductive film 311b. 251. The conductive film 370 and the conductive film 313 contain a material that transmits visible light. In addition, an alignment film 173a is provided between the liquid crystal 312 and the conductive film 370. An alignment film 173b is provided between the electrodes 313.

[0295] A light diffusion plate 129 and a polarizing plate 140 are disposed on the outer surface of the substrate 752a. Although a linear polarizer may be used as 40, a circular polarizer may also be used. For example, a laminate of a linear polarizing plate and a quarter-wave retardation plate can be used. This makes it possible to suppress reflection of external light. In addition, the liquid crystal element used for the liquid crystal element 340 is The desired contrast can be achieved by adjusting the cell gap, orientation, driving voltage, etc. This is how it should be done.

[0296] In the liquid crystal element 340, the conductive film 311b has a function of reflecting visible light, and the conductive film 31 The light incident from the substrate 752a side is polarized by the polarizing plate 140. The light is polarized by the conductive film 311b, passes through the conductive film 313 and the liquid crystal 312, and is reflected by the conductive film 311b. The light then passes through the liquid crystal 312 and the conductive film 313 again and reaches the polarizer 140. The orientation of the liquid crystal 312 is controlled by applying a voltage between the film 311b and the conductive film 313, and the light That is, the intensity of the light emitted through the polarizer 140 can be controlled by In addition, the colored film 175 absorbs light outside of a specific wavelength range. As a result, the extracted light becomes, for example, red light.

[0297] The light emitting element 360 is a bottom emission type light emitting element. A laminated layer in which a conductive film 191, an EL layer 192, and a conductive film 193b are laminated in this order from the film 220 side. In addition, the conductive film 193a is provided to cover the conductive film 193b. The conductive film 193b contains a material that reflects visible light, and the conductive film 191 and the conductive film 193a transmit visible light. The light emitted by the light emitting element 360 passes through the colored film 174, the insulating film 220, the opening 2 51, and is emitted to the substrate 752a side through the conductive film 313 and the like.

[0298] A protective film 228 is provided over the conductive film 193a and the insulating film 216 included in the light emitting element 360. The protective film 228 can be the protective film 28 described in Embodiment 1. By providing the protective film 228 on the optical element 360, water, acid, etc. are prevented from entering the light emitting element 360 from the outside. It is possible to prevent the diffusion of elements and the like, and to reduce deterioration of the light emitting element 360. In addition, a display device having a highly reliable light-emitting element can be manufactured.

[0299] In addition, in the display device shown in FIG. 15, the insulating film 213 and the protective film 228 are in contact with each other in the region 209. The region 209 is provided in a ring shape in the periphery of the display device, so that the insulating film 213 The light emitting element 360 is provided inside the area surrounded by the protective film 228. Preventing water, oxygen, etc. from diffusing into the light emitting element 360 from the top, bottom, and sides of the device is possible and preferable.

[0300] In addition, although FIG. 15 shows a structure in which the protective film 228 is in contact with the insulating film 213, 228 may be in contact with the insulating film 211 or the insulating film 212.

[0301] As shown in FIG. 15, the opening 251 is provided with a conductive film 370 that transmits visible light. In this way, even in the area overlapping with the opening 251, the other area Since the liquid crystal 312 is oriented in the same manner as in the other regions, poor alignment of the liquid crystal occurs at the boundary between these regions. This can prevent unintended light leakage.

[0302] An insulating film 217 is provided on the insulating film 216 that covers the end of the conductive film 191. The film 217 acts as a spacer to prevent the insulating film 220 and the substrate 751a from coming closer than necessary. The EL layer 192 and the conductive film 193a are also shielded by a metal mask. When forming the mask using a masking mask, in order to prevent the mask from coming into contact with the surface on which the mask is to be formed, Note that the insulating film 217 does not have to be provided if it is not necessary.

[0303] One of the source and drain of the transistor 205 is connected to the light-emitting element 3 through a conductive film 224. 60 is electrically connected to the conductive film 191.

[0304] One of the source and drain of the transistor 206 is connected to the conductive film 31 through a connection portion 207. The conductive film 311b and the conductive film 370 are provided in contact with each other, and this Here, the connection portion 207 is formed by an opening provided in the insulating film 220. This is a portion that connects the conductive films provided on both sides of the insulating film 220 together via the insulating film 220 .

[0305] A connection portion 204 is provided in the region where the substrate 751a and the substrate 752a do not overlap. The connection portion 204 is electrically connected to the FPC 763a via the connection body 242. The connection portion 204 has the same structure as the connection portion 207. The upper surface of the connection portion 204 is covered with the conductive film 37. The conductive film obtained by processing the same conductive film as in the connecting portion 204 is exposed. and FPC 763a can be electrically connected via connector 242.

[0306] A connecting portion 252 is provided in a portion of the area where the adhesive 183 is provided. In 52, a conductive film obtained by processing the same conductive film as the conductive film 370 and a conductive film 313 A part of the wiring pattern 752a is electrically connected to the wiring pattern 752b by the connector 243. The formed conductive film 313 is inputted from the FPC 763a connected to the substrate 751a side. A signal or potential can be supplied via connection 252 .

[0307] The connectors 243 may be, for example, conductive particles. For example, particles of organic resin or silica coated with a metal material can be used. It is preferable to use nickel or gold as the metal material, as this can reduce the contact resistance. Particles coated with layers of two or more metal materials, such as nickel coated with gold, It is preferable to use a material that can be elastically or plastically deformed as the connector 243. In this case, the connectors 243, which are conductive particles, are preferably used as shown in FIG. In this way, the connecting body 243 and the connecting body 243 may be crushed in the vertical direction. The contact area with the electrically conductive film increases, reducing contact resistance and preventing connection failures. The occurrence of the above defects can be suppressed.

[0308] The connector 243 is preferably disposed so as to be covered with the adhesive 183. For example, The connecting bodies 243 may be dispersed in the adhesive 183 before curing.

[0309] FIG. 15 shows an example in which a transistor 201 is provided as an example of the circuit portion 762a. are.

[0310] In FIG. 15, as an example of the transistor 201 and the transistor 205, a channel is formed. The semiconductor film 231 is sandwiched between two gates. The other gate is a conductive film overlapping the semiconductor film 231 via the insulating film 212. The film 223 is configured as follows. By using such a configuration, the threshold voltage of the transistor The voltage can be controlled by connecting two gates and applying the same signal to them. Such a transistor may be driven by supplying a It is possible to increase the field effect mobility compared to conventional transistors, and increase the on-current. As a result, a circuit capable of high-speed operation can be fabricated. By using a transistor with a large on-current, Therefore, even if the number of wires increases when the display device is made larger or higher resolution, This makes it possible to reduce signal delays and suppress display unevenness.

[0311] Note that the transistors included in the circuit portion 762a and the transistors included in the display portion 761b are The plurality of transistors included in the circuit portion 762a may all have the same structure. The transistors may have the same structure, or a combination of transistors with different structures may be used. Furthermore, the plurality of transistors included in the display portion 761b may all have the same structure. Transistors of different structures may be used in combination.

[0312] At least one of the insulating film 212 and the insulating film 213 covering each transistor is resistant to water and hydrogen. It is preferable to use a material in which impurities are not easily diffused, such as the insulating film 212. The insulating film 213 can function as a barrier film. It is possible to effectively suppress the diffusion of impurities into the transistor from the outside. This makes it possible to realize a highly reliable display device.

[0313] On the substrate 752a side, an insulating film 165 is provided to cover the colored film 175 and the light-shielding film 176. The insulating film 165 may also function as a planarizing film. As a result, the surface of the conductive film 313 can be made roughly flat, and the alignment state of the liquid crystal 312 can be made uniform. do.

[0314] [Cross-sectional configuration example 2] The display device shown in FIG. 16 has a top-gate type transistor in the configuration shown in FIG. This is an example of a case where a top-gate transistor is applied. By applying this, the parasitic capacitance can be reduced, and the frame frequency of the display can be increased. can be done.

[0315] The transistor included in the display device of one embodiment of the present invention has a conductive film functioning as a gate electrode. a semiconductor film, a conductive film functioning as a source electrode, and a conductive film functioning as a drain electrode. and an insulating film that functions as a gate insulating film.

[0316] The structure of the transistor is not particularly limited. For example, a planar transistor Alternatively, a staggered transistor may be used, or an inversely staggered transistor may be used. In addition, the transistor may have either a top gate type or a bottom gate type structure. Alternatively, gate electrodes may be provided above and below the channel.

[0317] A protective film 228 is provided over the conductive film 193a and the insulating film 216 included in the light emitting element 360. The protective film 228 is in contact with the insulating film 213 in a region 230. 30 is provided in a ring shape in the peripheral portion of the display device, the insulating film 213 and the protective film 22 The light emitting element 360 is provided inside the area surrounded by 8. As a result, the top and bottom surfaces of the display device It is possible to prevent water, oxygen, etc. from diffusing into the light emitting element 360 from the front and side surfaces. I wish.

[0318] In addition, although FIG. 16 shows a structure in which the protective film 228 is in contact with the insulating film 213, 228 may be in contact with the insulating film 211 or the insulating film 212.

[0319] Each component of the display device shown in this embodiment may be replaced with the component of the display device shown in the third embodiment. The following components can be used:

[0320] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0321] (Embodiment 5) In this embodiment, a display module that can be manufactured using one embodiment of the present invention will be described. and explain.

[0322] The display module 8000 shown in FIG. 17 includes an upper cover 8001 and a lower cover 8002. Between them, touch panel 8004 connected to FPC8003 and A display panel 8006, a frame 8009, a printed circuit board 8010, and a battery 801 1.

[0323] A display device manufactured using one embodiment of the present invention can be used for the display panel 8006, for example. A display device manufactured using one embodiment of the present invention can be used as a display panel 800, for example. By using the same in the display module 6, it is possible to manufacture a high-definition display module 8000. This can improve the reliability of the display module.

[0324] The upper cover 8001 and the lower cover 8002 are connected to the touch panel 8004 and the display panel The shape and dimensions can be changed as needed to fit the size of the 8006.

[0325] The touch panel 8004 may be a resistive or capacitive touch panel. It can be used by superimposing it on the panel 8006. The display panel 8006 can also be provided with a touch panel function.

[0326] The frame 8009 has a function of protecting the display panel 8006 and also a function of preventing the movement of the printed circuit board 8010. It also functions as an electromagnetic shield to block electromagnetic waves generated by the operation of the The frame 8009 may also function as a heat sink.

[0327] The printed circuit board 8010 includes a power supply circuit, a signal circuit for outputting a video signal and a clock signal. The power supply circuit is provided with a signal processing circuit. Alternatively, the power source may be a battery 8011 provided separately. This can be omitted if a commercial power source is used.

[0328] In addition, the display module 8000 includes components such as a polarizing plate, a retardation plate, and a prism sheet. It may also be provided in addition.

[0329] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0330] (Embodiment 6) In this embodiment, electronic devices to which the display device of one embodiment of the present invention can be applied will be described. .

[0331] The display device of one embodiment of the present invention can be applied to the display portion of an electronic device. This allows for the realization of electronic devices with high display quality, or extremely high-definition electronic devices. Alternatively, highly reliable electronic devices can be realized.

[0332] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Personal computers, computer monitors, digital cameras, digital videos Cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, audio players Examples include live video equipment, large gaming machines such as pachinko machines, etc.

[0333] The electronic device or lighting device according to one embodiment of the present invention can be used for interior or exterior walls of a house or building, Alternatively, it can be incorporated along curved surfaces in the interior or exterior of a vehicle.

[0334] The electronic device of one embodiment of the present invention may include a secondary battery and may be powered by wireless power transmission. It is preferable that the secondary battery can be charged.

[0335] As the secondary battery, for example, a lithium polymer battery (lithium ion battery) using a gel electrolyte is used. Lithium-ion secondary batteries such as lithium-ion polymer batteries, nickel-metal hydride batteries, nickel-cadmium batteries, organic Examples include radical batteries, lead-acid batteries, secondary air batteries, nickel-zinc batteries, and silver-zinc batteries. do.

[0336] The electronic device according to one embodiment of the present invention may include an antenna. By doing so, it is possible to display images, information, etc. on the display unit. If the device has a secondary battery, the antenna may be used for contactless power transmission.

[0337] The electronic device according to one embodiment of the present invention includes a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation Number, distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor or infrared) It may have.

[0338] The electronic device of one embodiment of the present invention can have various functions. (still images, videos, text images, etc.) on the display, touch panel function, calendar Functions such as displaying date and time, running various software (programs) functions, wireless communication functions, and functions to read programs or data recorded on recording media. It can have functions etc.

[0339] Furthermore, in an electronic device having a plurality of display units, one display unit is mainly used for displaying image information. and one display unit mainly displays text information, or multiple displays By displaying images that take parallax into consideration, it is possible to have a function for displaying a three-dimensional image. Furthermore, electronic devices with an image receiving unit have the function of taking still or moving images, Functions for automatically or manually correcting captured images, and for storing captured images on a recording medium (external or electronic) It can have functions such as saving the captured image to a memory card (built into the device) and displaying the captured image on the display. Note that the functions of the electronic device of one embodiment of the present invention are not limited to those described above, and various functions can be used. It can have:

[0340] The display device of one embodiment of the present invention can display an extremely high-resolution image. In particular, portable electronic devices, wearable electronic devices, and e-book readers It can also be used in VR (Virtual Reality) devices and It can also be suitably used in AR (Augmented Reality) devices.

[0341] 18(A) and (B) show an example of a mobile information terminal 800. The mobile information terminal 800 has the following functions: The device includes a housing 801, a housing 802, a display unit 803, a display unit 804, a hinge unit 805, and the like. .

[0342] The housing 801 and the housing 802 are connected by a hinge part 805. The mobile information terminal 800 is 18(A) to the folded state, as shown in FIG. 18(B), the housing 801 The housing 802 can be opened.

[0343] For example, document information can be displayed on the display unit 803 and the display unit 804. It can also be used as a book terminal. It is also possible to display video images.

[0344] In this way, the portable information terminal 800 can be folded when carried around, making it suitable for general use. It is highly usable.

[0345] The housings 801 and 802 are provided with a power button, an operation button, an external connection port, a switch, and a It may also have a speaker, microphone, etc.

[0346] An example of a mobile information terminal is shown in FIG. 18(C). The mobile information terminal 810 shown in FIG. 18(C) is , a housing 811, a display unit 812, an operation button 813, an external connection port 814, a speaker 81 5, a microphone 816, a camera 817, etc.

[0347] The display device of one embodiment of the present invention is provided in the display portion 812. By using a display device having such a configuration as the display portion 812, it is possible to capture an image even if the area of ​​the display portion 812 is small. It is possible to check the details of the image.

[0348] The mobile information terminal 810 has a touch sensor on the display unit 812. All operations, such as inputting characters, can be performed by touching the display 812 with a finger or a stylus. This can be done.

[0349] In addition, by operating the operation button 813, the power can be turned on and off, and the display unit 812 can be displayed. You can change the type of image displayed. For example, from the email creation screen, you can change the type of image displayed. You can switch to the new screen.

[0350] In addition, a detection device such as a gyro sensor or an acceleration sensor is installed inside the mobile information terminal 810. By providing this, the orientation (portrait or landscape) of the mobile information terminal 810 can be determined and the image of the display unit 812 can be displayed. You can also set the screen orientation to automatically change. The switching can be done by touching the display unit 812, operating the operation button 813, or using the microphone 816. This can also be done by voice input or the like.

[0351] The mobile information terminal 810 is, for example, one selected from a telephone, a notebook, an information viewing device, etc. Or it has multiple functions. Specifically, it can be used as a smartphone. The portable information terminal 810 can be used for, for example, mobile phone calls, e-mails, viewing and creating documents, playing music, and video. It can run various applications such as image playback, internet communication, and games. Cut.

[0352] 18D shows an example of a camera. The camera 820 includes a housing 821, a display unit 822, The camera 820 has an operation button 823, a shutter button 824, etc. A lens 826 is attached.

[0353] The display portion 822 includes the display device of one embodiment of the present invention.

[0354] Here, the camera 820 is a camera in which the lens 826 can be removed from the housing 821 and replaced. However, the lens 826 and the housing may be integrated.

[0355] The camera 820 takes still or moving images by pressing the shutter button 824. The display unit 822 has a function as a touch panel, and It is also possible to take a picture by touching 22.

[0356] The camera 820 can be equipped with a strobe device, a viewfinder, etc. Alternatively, these may be incorporated into the housing 821.

[0357] FIG. 19(A) shows the appearance of the camera 840 with the viewfinder 850 attached. .

[0358] The camera 840 includes a housing 841, a display unit 842, operation buttons 843, and a shutter button 844. 44, etc. Also, a detachable lens 846 is attached to the camera 840. do.

[0359] Here, the camera 840 is a camera in which the lens 846 can be removed from the housing 841 and replaced. However, the lens 846 and the housing may be integrated.

[0360] The camera 840 can capture an image by pressing the shutter button 844 . The display unit 842 also functions as a touch panel, and by touching the display unit 842 It is also possible to capture images by

[0361] The housing 841 of the camera 840 has a mount with electrodes, a finder 850, and Alternatively, a strobe device or the like can be connected.

[0362] The finder 850 includes a housing 851, a display unit 852, a button 853, and the like.

[0363] The housing 851 has a mount that engages with the mount of the camera 840, and The mount 850 can be attached to the camera 840. The mount also has electrodes. The image received from the camera 840 via the electrode can be displayed on the display unit 852. can.

[0364] The button 853 functions as a power button. The display of 2 can be switched on and off.

[0365] The display unit 842 of the camera 840 and the display unit 852 of the finder 850 are A display device manufactured using one embodiment of the present invention can be applied to such a display device. By using the display units 842 and 852, even if the area of ​​the display units 842 and 852 is small, the captured image can be displayed clearly. It is possible to check the details of the image and the captured image.

[0366] In FIG. 19(A), the camera 840 and the finder 850 are separate electronic devices. These are configured to be detachable, but the housing 841 of the camera 840 is provided with a display according to one embodiment of the present invention. A viewfinder with the device may be built in.

[0367] FIG. 19(B) shows the appearance of the head mounted display 860.

[0368] The head-mounted display 860 includes a mounting part 861, a lens 862, a main body 863, and a surface The mounting portion 861 has a display unit 864, a cable 865, etc. The mounting portion 861 also has a battery 866 is built in.

[0369] A cable 865 supplies power from a battery 866 to the main body 863. The main body 863 is The image information such as the received image data can be displayed on the display unit 864. In addition, a camera installed in the main body 863 captures the movements of the user's eyeballs and eyelids, By calculating the coordinates of the user's viewpoint based on the information, the user's viewpoint can be used as an input means. It can be used as such.

[0370] Furthermore, the wearing section 861 may be provided with a plurality of electrodes at positions that come into contact with the user. The main body 863 detects the current flowing through the electrodes in accordance with the movement of the user's eyeball, The device may have a function to recognize the user's point of view. The attachment part 861 may have a function of monitoring the pulse of the user. The device may have various sensors such as a temperature sensor, a pressure sensor, an acceleration sensor, etc. The device may have a function to display biological information on the display unit 864. In addition, the device may also have a function to display biological information on the display unit 864. The image displayed on the display unit 864 may be changed in accordance with the movement.

[0371] The display device of one embodiment of the present invention can be applied to the display portion 864. By using a display device manufactured using the above for the display portion 864, a realistic image can be displayed. It is possible to do this.

[0372] 19(C) and (D) show the appearance of the head mounted display 870.

[0373] The head-mounted display 870 includes a housing 871, two display units 872, and an operation button. 873 and a band-shaped fixture 874.

[0374] The head mounted display 870 has the same configuration as the head mounted display 860. In addition to the functions, it has two displays.

[0375] By having two displays 872, the user can see one display per eye. This allows high-resolution images to be displayed even when using parallax for 3D display. The display unit 872 can display an image in an arc shape with the user's eye as the approximate center. This ensures that the distance from the user's eyes to the display surface is constant. In addition, the brightness and chromaticity of the light from the display can be seen more clearly. Even if the angle changes, the display is used in the normal direction to the display surface. Since the subject's eyes are positioned in the same direction, the effect can be virtually ignored, resulting in a more realistic image. It is possible to display the image.

[0376] The operation button 873 has functions such as a power button. It may have a button.

[0377] As shown in FIG. 19(E), a lens is provided between the display unit 872 and the position of the user's eyes. The lens 875 allows the user to magnify the display 872. At this time, as shown in Figure 19(E), the diopter adjustment The lens may have a dial 876 for changing the position of the lens for the joint.

[0378] The display device of one embodiment of the present invention can be applied to the display portion 872. Since the display device has extremely high definition, it is expanded using a lens 875 as shown in FIG. 19(E). Even if it's a big deal, the user won't see any pixels, resulting in a more realistic image. It is possible.

[0379] 20(A) and (B) show an example in which one display unit 872 is provided. By adopting such a configuration, the number of parts can be reduced.

[0380] The display unit 872 displays two images, one for the right eye and one for the left eye, in two areas, one on the left and one on the right. This allows the display of stereoscopic images using binocular parallax. This can be done.

[0381] Alternatively, a single image that can be viewed by both eyes may be displayed across the entire area of ​​the display unit 872. This makes it possible to display panoramic images across both ends of the field of view, The realization increases.

[0382] The above-mentioned lens 875 may also be provided. The display unit 872 displays two images side by side. Alternatively, one image may be displayed on the display unit 872 and viewed with both eyes through the lens 875. The same image may be displayed.

[0383] Furthermore, the display unit 872 does not have to be curved, and the display surface may be flat. 20(C) and (D) show an example in which there is one display unit 872 that does not have a curved surface. is doing.

[0384] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. [Example]

[0385] In this example, an aluminum oxide film formed by sputtering or ALD was used. The film density of each film will be explained below.

[0386] <Sample S1 and Sample S2> A 500 nm thick aluminum oxide film is formed on a glass substrate using the sputtering method. The film formation conditions are shown in Table 1. Aluminum was used as the sputtering target. The reactive sputtering method uses a mixed gas containing oxygen as the sputtering gas. Thus, an aluminum oxide film was formed.

[0387] [Table 1]

[0388] <Samples A1 to A3> Aluminum oxide films of 100 nm or 50 nm thickness were deposited on glass substrates using the ALD method. The thickness of the aluminum oxide film on sample A1 was 100 nm. The thickness of the aluminum oxide film of Sample A3 is 50 nm. 3 and 4. The cycle time is different. Also, Sample A1, Sample A3, and Sample A4 are each formed. The film formation conditions are shown in Table 2. One cycle is the same as the precursor and oxidant. The longer the time per cycle, the longer the deposition chamber. This can reduce the amount of unreacted precursor remaining in the reaction system.

[0389] [Table 2]

[0390] The film densities of the aluminum oxide films included in Samples S1, S2, and A1 to A3 The results of measuring the degree of vibration are shown in Table 3. Here, the TRXV-SMX manufactured by Technos Co., Ltd. was used. The film density was measured by X-ray reflectivity measurement. The interfacial layer in the

[0391] [Table 3]

[0392] From Table 3, the aluminum oxide film formed using the ALD method has a yield of 10 ... By extending the film deposition time, impurities contained in the film can be reduced, thereby increasing the film density. Furthermore, by using the sputtering method, it is possible to remove impurities contained in the film. It can reduce waste. [Example]

[0393] In this example, the quantitative values ​​of elements contained in the aluminum oxide film formed in Example 1 were measured. The results of the measurements will be explained below.

[0394] Aluminum contained in the films of Sample S1, Sample S2, Sample A1, and Sample A2, The quantitative values ​​of oxygen and carbon were measured using X-ray photoelectron spectroscopy, and the measurement results are shown in Table 4. In the XPS of this example, a QuanteraSXM manufactured by PHI was used as the measuring device, and Monochromated AlKα radiation (1.486 keV) was used.

[0395] [Table 4]

[0396] From Table 4, it can be seen that the aluminum oxide film formed by the sputtering method contains It was found that aluminum and oxygen were contained in the film. It was found that the aluminum film contained aluminum, oxygen, and trace amounts of carbon. Trimethylaluminum is used as a precursor for forming the aluminum film. The carbon of the methyl group was not oxidized and remained in the aluminum oxide film, so carbon was not included. It is thought that this will be the case.

[0397] Furthermore, from Table 4, it can be seen that the aluminum oxide film formed using the ALD method is Compared to aluminum oxide films formed using the It was found that the numerical ratio (O / Al) was large. The aluminum oxide film formed by the ALD method has a different composition from the aluminum oxide film formed by the ALD method. It turned out to be different.

[0398] From this, it is possible to form an aluminum oxide film using the sputtering method and an acid film using the ALD method. When a protective film is formed by laminating aluminum oxide films in order, the protective film is The upper aluminum oxide film contains more carbon than the upper aluminum film. An aluminum oxide film is laminated in this order using the etching method, and an aluminum oxide film is laminated in this order using the ALD method. When a protective film is formed using this method, the protective film has a higher aluminum oxide content than the aluminum oxide film in the lower layer. The aluminum film has a higher oxygen to aluminum atomic ratio (O / Al). The aluminum to oxygen ratio of the aluminum oxide film formed by the tar-coating method is stoichiometric. It can be seen that the composition is close to that of Al2O3. [Example]

[0399] In this example, the optical properties of an aluminum oxide film formed by sputtering were investigated. and explain.

[0400] First, the method for preparing the sample will be described. Here, the same conditions as those for sample S1 shown in Example 1 are used. A 500 nm thick aluminum oxide film was formed using the sputtering method.

[0401] Figure 21(A) shows the transmittance, reflectance, and absorptance of the sample. The horizontal axis indicates the wavelength, and the vertical axis indicates the transmittance, reflectance, and absorptance of light of each wavelength. The line indicates the reflectance, and the dotted line indicates the absorptance. As shown in Figure 21(A), the transmittance of the sample is high. It is clear that

[0402] For reference, a 70 nm thick film was formed on a glass substrate using the sputtering method. The optical properties of the ITO film are shown in FIG.

[0403] The transmittance of the aluminum oxide film shown in FIG. 21(A) is higher than that of the ITO film shown in FIG. 21(B). Therefore, aluminum oxide formed on the light emitting element by sputtering is Even if the aluminum film is formed, it does not hinder the extraction efficiency of the light emitted from the light emitting element. [Example]

[0404] In this embodiment, the cross-sectional shape of the protective film is measured using STEM (Scanning Transmission Electron Microscopy). The specimens were observed using ion electron microscopy.

[0405] First, the method for preparing the sample will be described.

[0406] As shown in FIGS. 1(A) and 1(B), a first electrode 10 was formed on a substrate 40. In this example, a glass substrate was used as the substrate 40. The first electrode 10 was made of a 100 nm thick film. The substrate was formed by laminating a 95 nm thick Ag-Pd-Cu alloy film and a 95 nm thick ITO film.

[0407] Next, an insulating film 14 was formed on the first electrode 10. Here, the insulating film 14 was a thin film having a thickness of A 1000 nm polyimide film was formed.

[0408] Next, an EL layer 16 having a thickness of 200 nm was formed on the first electrode 10 and the insulating film 14 .

[0409] Next, the second electrode 18 was formed on the EL layer 16. Here, the second electrode 18 was formed of It was formed by laminating a 15 nm thick Ag—Mg alloy film and a 70 nm thick ITO film.

[0410] Next, an insulating film 24 was formed on the second electrode 18, and an insulating film 26 was formed on the insulating film 24. Here, the insulating film 24 is formed by sputtering aluminum oxide to a thickness of 300 nm. After forming the aluminum film, an aluminum oxide film having a thickness of 50 nm is formed as the insulating film 26 by the ALD method. A niobium film was formed.

[0411] Next, a carbon film C and a platinum film Pt are deposited on the insulating film 26 as a protective film for STEM observation. A layer was formed.

[0412] The cross section of the sample was observed using a STEM, and the observation results are shown in Figure 22(A).

[0413] As a comparative example, a comparative sample was formed in which the insulating film 26 was not formed on the insulating film 24. In this example, the insulating film 24 is formed by sputtering aluminum oxide to a thickness of 1000 nm. A film was formed.

[0414] The cross section of the comparative sample was observed by STEM, and the observation results are shown in Figure 22(B).

[0415] Figures 22(A) and (B) are STEM images. Therefore, defect areas and low density areas are observed to have lower contrast than high density areas. As shown in FIG. 22(B), the insulating film 14 has a surface that is inclined with respect to the substrate. Numerous linear low density areas were observed in the region of the velum 24 (shown by the dashed square).

[0416] On the other hand, in FIG. 22(A), an insulating film 26 is formed on the insulating film 24. Even if the insulating film 24 overlaps with the region of the insulating film 14 whose surface is inclined with respect to the substrate, the linear low-density No areas are observed.

[0417] As shown in Figure 22, the ALD method was applied to the aluminum oxide film formed by the sputtering method. By using this method to laminate aluminum oxide films, it is possible to It can be seen that the low density region of the aluminum film is reduced. This is because the low density region is covered by the ALD method. One of the reasons for this is thought to be that the aluminum oxide formed in the step 1 is filled in. [Example]

[0418] In this example, in the aluminum oxide film included in the sample formed in Example 1, water vapor The results of evaluating the moisture permeability using an air permeability measuring device are explained below. The aluminum oxide film contained in the sample formed in Example 1 was formed and stored in a high-temperature, high-humidity atmosphere. The results of the test will be explained.

[0419] <Water vapor permeability> First, the sample preparation process will be described with reference to FIG.

[0420] As shown in FIG. 23(A), an EL layer 903 was formed on a glass substrate 901. Next, An insulating film 905 was formed on the L layer 903 by sputtering. An insulating film 907 was formed on the insulating film 905 by the ALD method. It functions as a protective film 908. The insulating film 907 and the film 911 are bonded together using an adhesive 909. It was fixed.

[0421] Next, as shown in FIG. 23(B), the EL layer 9 is cut using a sharp cutting tool such as a knife. 03, an insulator film 905, an insulator film 907, an adhesive 909, and a film 911 are cut. In FIG. 23(B), the dashed arrow indicates the cut.

[0422] Next, as shown in FIG. 23(C), the EL layer 903 and the glass substrate 901 were peeled off.

[0423] Next, as shown in FIG. 23(D), the EL layer 903 and the film 915 are bonded together with an adhesive 913. It was fixed using.

[0424] The sample was prepared by the above steps.

[0425] Here, the aluminum oxide film of each sample shown in Example 1 was used as the protective film 908. The samples were prepared using the above method.

[0426] Next, the water vapor transmission rate of each sample was measured. Gas and water vapor transmission rate measurement was performed using a Super-Detect WG-7S Each sample film 911 or 915 was exposed to an atmosphere of 40°C and 90% humidity for several hours. At this time, the adhesive 913, the EL layer 903, the protective film 908, and the adhesive 909 were interposed therebetween. The rate at which moisture permeated from one of the films 911 and 915 to the other was measured. The higher the water blocking ability of the protective film 908, the lower the water vapor transmission rate.

[0427] Table 5 shows the configuration of the protective film 908 in each sample and the water vapor permeability of each sample.

[0428] [Table 5]

[0429] From Table 5, it can be seen that samples M11 and M12 have lower water vapor permeability than sample S11. That is, the protective film 908 is made of aluminum oxide formed by sputtering. Rather than using a single layer of aluminum film, a sputtered aluminum oxide film and an A By laminating an aluminum oxide film formed using the LD method, the water vapor permeability is reduced. That is, it was found that the aluminum oxide film formed by the sputtering method A laminated film of aluminum oxide films formed by the ALD method is used as a protective film for a light-emitting element. It was found that by doing so, it is possible to reduce the diffusion of moisture from the outside to the light-emitting element. .

[0430] <High temperature and humidity storage test> Next, the protective film 90 included in the sample S11, the sample M11, and the sample M12 was applied to the light-emitting device. 8 were formed, and thus samples S21, M21, and M22 were prepared. The configurations of the protective films of S21, M21, and M22 are shown in Table 6. The shape was a square with each side measuring 2 mm.

[0431] [Table 6]

[0432] Next, samples S21, M21, and M22 were stored in an atmosphere of 65°C and 95% humidity. The storage time of sample S21 was set to 0 hours, and the storage times of samples M21 and M22 were set to 50 hours. It was set to 0 hours.

[0433] 24(A), (B), and (C) show the results of the specimen S21, specimen S22, and specimen S23 after the storage test, respectively. 10 is an optical microscope photograph of the light-emitting elements of sample M21 and sample M22, which are observed when the light is emitted. .

[0434] As shown in FIG. 24(A), the substrate was protected by a single layer of aluminum oxide film formed by sputtering. Black spots are observed in the sample S21 on which the protective film 908 is formed. As shown in (C), the aluminum oxide film formed by sputtering and the ALD film The sample M21 and the sample M22 were laminated with an aluminum oxide film formed by the above method to form a protective film 908. From the above, it is possible to observe no black spots in the material M22. It was found that the formation of a protective film can prevent deterioration of the light-emitting element.

[0435] <Light-emitting characteristics> Next, the light-emitting characteristics of Samples M21 and M22 were evaluated after a high-temperature, high-humidity storage test. Figures 25 and 26 show the luminescence characteristics of samples M21 and M22, respectively. In FIG. 26, (A) shows the voltage-current characteristics of the light-emitting element before and after the storage test, and (B) shows the voltage-current characteristics of the light-emitting element after the storage test. 1 shows the luminance and current efficiency characteristics of the light-emitting element before and after the survival test.

[0436] From Figures 25 and 26, even after the storage test (500 hours), the initial state (0 hours) and It was found that similar optical properties were obtained. The protective film reduces the diffusion of moisture from the outside to the light emitting element, preventing the light emitting element from deteriorating. I found out that it wasn't. [Explanation of symbols]

[0437] 10 electrodes 12 electrodes 14 insulating film 16 EL layer 18 electrodes 18a area 18b area 20 Light-emitting element 22 Light-emitting element 24 insulating film 24_1 Insulating film 24a Low density area 24b area 26 insulating film 26_1 Insulating film 28 Protective film 28_1 Protective film 30 Colored film 32 Colored film 40 boards 42 PCB 44 Adhesive 70 display area 75 pixel units 76 pixels 76B Display element 76G display element 76R display element 77 pixels 77B Display element 77G display element 77R display element 79 light 111 Conductive film 111b Conductive film 111c Conductive film 112a Semiconductor film 112b Semiconductor film 113a Conductive film 113b Conductive film 113c conductive film 113d conductive film 121 Conductive film 122 EL layer 122B EL layer 122G EL layer 122R EL layer 123 Conductive Film 125 Protective film 129 Light Diffuser 130 Capacitive element 132 insulating film 133 Insulating Film 134 insulating film 135 insulating film 136 Insulating Film 137 Insulating Film 138 insulating film 139 Insulating Film 140 Polarizing Plate 141 Carrier injection layer 141B Carrier injection layer 141G Carrier injection layer 141R Carrier injection layer 142 Carrier transport layer 142B Carrier transport layer 142G Carrier transport layer 142R Carrier transport layer 143B Light-emitting layer 143G Light-emitting layer 143R luminescent layer 144 Carrier transport layer 144B Carrier transport layer 144G Carrier transport layer 144R Carrier transport layer 145 Carrier injection layer 145B Carrier injection layer 145G Carrier injection layer 145R Carrier injection layer 151a Adhesive layer 152B Colored film 152G colored film 152R colored film 165 insulating film 167 Insulating Film 173a Alignment film 173b Alignment film 174 Colored film 175 Colored film 176 Light-shielding film 182 Adhesive 183 Adhesive 191 Conductive film 192 EL layer 193a Conductive film 193b Conductive film 201 Transistor 204 Connection 205 Transistor 206 Transistor 207 Connection 209 areas 211 Insulating film 212 insulating film 213 Insulating film 214 insulating film 215 insulating film 216 Insulating film 217 Insulating Film 220 insulating film 221 Conductive Film 222 Conductive film 223 Conductive Film 224 Conductive Film 228 Protective film 230 areas 231 Semiconductor Film 242 Connectors 243 Connectors 251 Aperture 252 Connection 300 display device 311 Electrode 311b Conductive film 312 LCD 313 Conductive Film 340 Liquid Crystal Devices 360 Light-emitting element 360b Light-emitting element 360g light emitting element 360r light emitting element 360w light emitting element 366 Input Devices 370 Conductive Film 400 display device 410 pixels 451 Aperture 710 Display device 720a Display element 720b Display element 721B display element 721G display element 721R display element 722B display element 722G display element 722R display element 731 Insulating Film 741a Transistor 741b transistor 741c transistor 741d transistor 741e transistor 741f transistor 741g transistor 741h transistor 742a transistor 742b transistor 751a board 751b board 752a board 752b board 761a Display section 761b Display section 762a circuit section 763a FPC 764a IC 765a wiring 800 Mobile Information Terminals 801 Case 802 chassis 803 Display section 804 Display section 805 Hinge part 810 Mobile Information Terminals 811 Case 812 Display section 813 Operation button 814 external connection port 815 Speaker 816 Mike 817 Camera 820 Camera 821 Case 822 Display section 823 Operation Button 824 shutter button 826 Lens 840 Camera 841 Case 842 Display section 843 Operation Button 844 Shutter button 846 Lens 850 Finder 851 Case 852 Display section 853 Button 860 Head Mounted Display 861 Mounting part 862 Lens 863 Main Unit 864 Display section 865 Cable 866 Battery 870 Head Mounted Display 871 Case 872 Display section 873 Operation Button 874 Fixtures 875 Lens 876 Dial 901 Glass substrate 903 EL layer 905 Insulating film 907 Insulating film 908 Protective film 909 Adhesive 911 film 913 Adhesive 915 Film 8000 Display Module 8001 Top cover 8002 Lower cover 8003 FPC 8004 Touch Panel 8005 FPC 8006 Display Panel 8009 Frame 8010 Printed Circuit Board 8011 Battery

Claims

1. a first transistor, a second transistor, and a display element; a first semiconductor film having a channel formation region of the first transistor; a first conductive film having a region disposed above the first semiconductor film and functioning as a gate electrode of the first transistor; a first insulating film having a region disposed above the first semiconductor film; a second conductive film having a region disposed above the first insulating film and electrically connected to one of the source and the drain of the first transistor through a first contact hole in the first insulating film; a second insulating film having a region disposed above the first conductive film and a region disposed above the second conductive film; a second semiconductor film having a region disposed above the second conductive film with the second insulating film interposed therebetween, the second semiconductor film having a channel formation region of the second transistor; a third conductive film having a region located above the second semiconductor film via a third insulating film having a region located above the second semiconductor film, and having a function as a first gate electrode of the second transistor; a fourth insulating film having a region disposed above the second semiconductor film and a region disposed above the third conductive film; a fourth conductive film having a region disposed above the fourth insulating film and electrically connected to one of the source and the drain of the second transistor through a second contact hole in the fourth insulating film; a fifth conductive film having a region disposed above the fourth conductive film via a fifth insulating film and electrically connected to the fourth conductive film via a third contact hole in the fifth insulating film; the fifth conductive film functions as a pixel electrode of the display element, the second conductive film functions as a second gate electrode of the second transistor and is electrically connected to the third conductive film; Display device.

2. a first transistor, a second transistor, and a display element; a first semiconductor film having a channel formation region of the first transistor; a first conductive film having a region disposed above the first semiconductor film and functioning as a gate electrode of the first transistor; a first insulating film having a region disposed above the first semiconductor film; a second conductive film having a region disposed above the first insulating film and electrically connected to one of the source and the drain of the first transistor through a first contact hole in the first insulating film; a second insulating film having a region disposed above the first conductive film and a region disposed above the second conductive film; a second semiconductor film having a region disposed above the second conductive film with the second insulating film interposed therebetween, the second semiconductor film having a channel formation region of the second transistor; a third conductive film having a region located above the second semiconductor film via a third insulating film having a region located above the second semiconductor film, and having a function as a first gate electrode of the second transistor; a fourth insulating film having a region disposed above the second semiconductor film and a region disposed above the third conductive film; a fourth conductive film having a region disposed above the fourth insulating film and electrically connected to one of the source and the drain of the second transistor through a second contact hole in the fourth insulating film; a fifth conductive film having a region disposed above the fourth conductive film via a fifth insulating film and electrically connected to the fourth conductive film via a third contact hole in the fifth insulating film; the fifth conductive film functions as a pixel electrode of the display element, the second conductive film has a region wider than the third conductive film in a cross-sectional view including a channel formation region of the second transistor and the second contact hole; the second conductive film functions as a second gate electrode of the second transistor and is electrically connected to the third conductive film; Display device.

3. a first transistor, a second transistor, and a display element; a first semiconductor film having a channel formation region of the first transistor; a first conductive film having a region disposed above the first semiconductor film and functioning as a gate electrode of the first transistor; a first insulating film having a region disposed above the first semiconductor film; a second conductive film having a region disposed above the first insulating film and electrically connected to one of the source and the drain of the first transistor through a first contact hole in the first insulating film; a second insulating film having a region disposed above the first conductive film and a region disposed above the second conductive film; a second semiconductor film having a region disposed above the second conductive film with the second insulating film interposed therebetween, the second semiconductor film having a channel formation region of the second transistor; a third conductive film having a region located above the second semiconductor film via a third insulating film having a region located above the second semiconductor film, and having a function as a first gate electrode of the second transistor; a fourth insulating film having a region disposed above the second semiconductor film and a region disposed above the third conductive film; a fourth conductive film having a region disposed above the fourth insulating film and electrically connected to one of the source and the drain of the second transistor through a second contact hole in the fourth insulating film; a fifth conductive film having a region disposed above the fourth conductive film via a fifth insulating film and electrically connected to the fourth conductive film via a third contact hole in the fifth insulating film; the second semiconductor film includes an oxide semiconductor; the fifth conductive film functions as a pixel electrode of the display element, the second conductive film functions as a second gate electrode of the second transistor and is electrically connected to the third conductive film; Display device.

4. a first transistor, a second transistor, and a display element; a first semiconductor film having a channel formation region of the first transistor; a first conductive film having a region disposed above the first semiconductor film and functioning as a gate electrode of the first transistor; a first insulating film having a region disposed above the first semiconductor film; a second conductive film having a region disposed above the first insulating film and electrically connected to one of the source and the drain of the first transistor through a first contact hole in the first insulating film; a second insulating film having a region disposed above the first conductive film and a region disposed above the second conductive film; a second semiconductor film having a region disposed above the second conductive film with the second insulating film interposed therebetween, the second semiconductor film having a channel formation region of the second transistor; a third conductive film having a region located above the second semiconductor film via a third insulating film having a region located above the second semiconductor film, and having a function as a first gate electrode of the second transistor; a fourth insulating film having a region disposed above the second semiconductor film and a region disposed above the third conductive film; a fourth conductive film having a region disposed above the fourth insulating film and electrically connected to one of the source and the drain of the second transistor through a second contact hole in the fourth insulating film; a fifth conductive film having a region disposed above the fourth conductive film via a fifth insulating film and electrically connected to the fourth conductive film via a third contact hole in the fifth insulating film; the second semiconductor film includes an oxide semiconductor; the fifth conductive film functions as a pixel electrode of the display element, the second conductive film has a region wider than the third conductive film in a cross-sectional view including a channel formation region of the second transistor and the second contact hole; the second conductive film functions as a second gate electrode of the second transistor and is electrically connected to the third conductive film; Display device.

5. In claim 3 or claim 4, The oxide semiconductor may be an In—Ga—Zn-based oxide, an In—Al—Zn-based oxide, an In—Sn—Zn-based oxide, an In—Hf—Zn-based oxide, an In—La—Zn-based oxide, an In—Ce—Zn-based oxide, an In—Pr—Zn-based oxide, an In—Nd—Zn-based oxide, an In—Sm—Zn-based oxide, an In—Eu—Zn-based oxide, an In—Gd—Zn-based oxide, an In—Tb—Zn-based oxide, or an In—Dy—Zn-based oxide. oxide, In-Ho-Zn-based oxide, In-Er-Zn-based oxide, In-Tm-Zn-based oxide, In-Yb-Zn-based oxide, In-Lu-Zn-based oxide, In-Sn-Ga-Zn-based oxide, In-Hf-Ga-Zn-based oxide, In-Al-Ga-Zn-based oxide, In-Sn-Al-Zn-based oxide, In-Sn-Hf-Zn-based oxide, and In-Hf-Al-Zn-based oxide, Display device.

6. In any one of claims 1 to 5, a sixth conductive film; the sixth conductive film has a region disposed below the first semiconductor film, the sixth conductive film has a region overlapping with a channel formation region of the first transistor; Display device.

Images