Substrate support, structure, and method for recycling structure

Abstract

A substrate support that suppresses abnormal discharge and a method for regenerating the substrate support are provided. [Solution] A substrate support comprising: a main body having a substrate support surface and a back surface opposite the substrate support surface, the main body having a through hole extending from the back surface to the substrate support surface; an upper porous plug and a lower porous plug arranged in the through hole, at least one of the upper porous plug and the lower porous plug being detachable from the main body; and a plurality of flowable particles filled between the upper porous plug and the lower porous plug in the through hole, each of the plurality of flowable particles being (i) formed from a Si-containing material, or (ii) formed from a resin material and a Si-containing coating on the resin material.

Description

[Technical Field]

[0001] FIELD The present disclosure relates to a substrate support and a method for refurbishment of a substrate support. [Background technology]

[0002] Patent Document 1 discloses a substrate support pedestal having an electrostatic chuck, a cooling base, a gas flow path formed between the top surface of the electrostatic chuck and the bottom surface of the cooling base and including a cavity, and a porous plug disposed in the cavity. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Special Publication No. 2022-535508 Summary of the Invention [Problem to be solved by the invention]

[0004] In one aspect, the present disclosure provides a substrate support that suppresses abnormal discharge and a method for regenerating the substrate support. [Means for solving the problem]

[0005] In order to solve the above problem, according to one aspect, a substrate support is provided, comprising: a main body having a substrate support surface and a back surface opposite the substrate support surface, and having a through hole extending from the back surface to the substrate support surface; an upper porous plug and a lower porous plug arranged in the through hole, at least one of the upper porous plug and the lower porous plug being detachable from the main body; and a plurality of flowable particles filled between the upper porous plug and the lower porous plug in the through hole, wherein each of the plurality of flowable particles is (i) formed from a Si-containing material or (ii) formed from a resin material and a Si-containing coating on the resin material. [Effects of the Invention]

[0006] According to one aspect, it is possible to provide a substrate support that suppresses abnormal discharge and a method for regenerating a substrate support. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is an example of a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus. [Figure 2] FIG. 3 is an example of a cross-sectional view of a support base main body of the substrate support according to the first embodiment. [Figure 3] FIG. 11 is an example of a cross-sectional view of a support base main body of a substrate support according to a second embodiment. [Figure 4] FIG. 11 is an example of a cross-sectional view of a support base main body of a substrate support according to a second embodiment during heat input. [Figure 5A] FIG. 2 is a schematic diagram showing an example of a flowable particle. [Figure 5B] FIG. 2 is a schematic diagram showing an example of a flowable particle. [Figure 5C] FIG. 2 is a schematic diagram showing an example of a flowable particle. [Figure 6A] 5A to 5C are cross-sectional views of an example of an electrostatic chuck in each step of a reclaiming process for a substrate support portion. [Figure 6B] 5A to 5C are cross-sectional views of an example of an electrostatic chuck in each step of a reclaiming process for a substrate support portion. [Figure 6C] 5A to 5C are cross-sectional views of an example of an electrostatic chuck in each step of a reclaiming process for a substrate support portion. [Figure 7A] FIG. 10 is an example cross-sectional view of a support base main body of a substrate support according to another embodiment. [Figure 7B] FIG. 10 is an example cross-sectional view of a support base main body of a substrate support according to another embodiment. [Figure 7C] FIG. 10 is an example cross-sectional view of a support base main body of a substrate support according to another embodiment. [Figure 8] 1 is a cross-sectional view showing an example of a structure between a lower electrode and a plasma processing chamber of a plasma processing apparatus. [Figure 9] 1 is a cross-sectional view showing an example of a structure between an upper electrode and a plasma processing chamber of a plasma processing apparatus. DETAILED DESCRIPTION OF THE INVENTION

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] [Plasma processing system] An example of the configuration of a plasma processing system will be described below. Fig. 1 is an example of a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus 1.

[0010] The plasma processing system includes a capacitively coupled plasma processing device 1 and a controller 2. The capacitively coupled plasma processing device 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing device 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one processing gas into the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0011] The substrate support 11 includes a support base main body 111 and a ring assembly 112. The support base main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the support base main body 111 surrounds the central region 111a of the support base main body 111 in a plan view. The substrate W is disposed on the central region 111a of the support base main body 111, and the ring assembly 112 is disposed on the annular region 111b of the support base main body 111 so as to surround the substrate W on the central region 111a of the support base main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0012] In one embodiment, the support body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 31 and / or a DC (Direct Current) power supply 32 (described later) may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (described later) is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 1111b may function as the lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0013] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0014] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply unit 17 configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a. The heat transfer gas supply unit 17 is configured to supply a heat transfer gas (e.g., He gas) to through-holes 111h (through-holes 1110h, 1111h described below with reference to FIG. 2) formed in the support base main body 111.

[0015] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0016] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0017] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0018] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0019] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0020] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0021] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0022] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0023] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0024] Here, the substrate support part 11 is formed with a through hole 111h for supplying a heat transfer gas (e.g., He gas) to the back side of the substrate W. When plasma processing is performed on the substrate W, the gap between the back side of the substrate W and the substrate support surface is filled with the heat transfer gas, and the heat transfer gas is also filled in the through hole 111h. Furthermore, when plasma processing is performed on the substrate W in the substrate support part 11, a vertical potential difference occurs between the substrate W supported on the substrate support surface and the base 1110 functioning as a lower electrode. This potential difference may cause abnormal discharge within the through hole 111h. The occurrence of abnormal discharge may wear out the electrostatic chuck 1111 or cause discharge marks to be formed on the back side of the substrate W.

[0025] An example of a structure for suppressing abnormal discharge will be described with reference to Fig. 2. Fig. 2 is an example of a cross-sectional view of the support base main body 111 of the substrate support 11 according to the first embodiment.

[0026] The support base main body 111 includes a base 1110, an electrostatic chuck 1111, and an adhesive layer 1112. A ceramic member (also referred to as a main body in the first embodiment) 1111a of the electrostatic chuck 1111 is fixed via the adhesive layer 1112 onto the base (conductive base) 1110 including a conductive member.

[0027] The ceramic member 1111a of the electrostatic chuck 1111 has a substrate support surface (upper surface) 1111S1 and a back surface (lower surface) 1111S2 opposite to the substrate support surface 1111S1. The back surface 1111S2 is bonded to the base 1110 via an adhesive layer 1112. The ceramic member 1111a of the electrostatic chuck 1111 has a through-hole 1111h formed therein, extending from the back surface 1111S2 to the substrate support surface 1111S1.

[0028] The base 1110 has an upper surface and a lower surface. The upper surface of the base 1110 is the surface that is bonded to the ceramic member 1111a via an adhesive layer 1112. The lower surface of the base 1110 is the surface opposite the upper surface of the base 1110. A through-hole 1110h that extends from the lower surface to the upper surface is formed in the base 1110.

[0029] The through holes 111h include a through hole 1110h and a through hole 1111h. The through holes 1110h and the through holes 1111h are formed, for example, coaxially so that heat transfer gas can flow between them.

[0030] An upper porous plug 210 and a lower porous plug 220 are provided in a through-hole 1111h formed in the ceramic member 1111a.

[0031] The upper porous plug 210 and the lower porous plug 220 have a porous structure that allows the heat transfer gas to flow in the axial direction of the through-holes 1111h (the vertical direction in the example of FIG. 2). Furthermore, the upper porous plug 210 and the lower porous plug 220 can shorten the movement distance (mean free path) of electrons in the voltage application direction (vertical direction, vertical direction) in the space in which the upper porous plug 210 and the lower porous plug 220 are disposed. This makes it possible to suppress abnormal discharge of the heat transfer gas in the upper porous plug 210 and the lower porous plug 220.

[0032] In addition, at least one of the upper porous plug 210 and the lower porous plug 220 is detachably attached to the ceramic member 1111a. In the example shown in FIG. 2, the upper porous plug 210 is fixed to the ceramic member 1111a, and the lower porous plug 220 is detachably attached to the ceramic member 1111a. For example, a female thread portion 1111t is formed in the ceramic member 1111a. The lower porous plug 220 is formed in a substantially cylindrical shape, and a male thread portion 220t that screws into the female thread portion 1111t is formed on the circumferential surface. This allows the lower porous plug 220 to be detachably attached to the ceramic member 1111a.

[0033] 2, the lower porous plug 220 is detachably provided, but the present invention is not limited to this, and the upper porous plug 210 may be detachably provided with respect to the ceramic member 1111a. Moreover, both the upper porous plug 210 and the lower porous plug 220 may be detachably provided with respect to the ceramic member 1111a.

[0034] Furthermore, in the through-hole 1111h, a plurality of fluid particles 230 are filled between the upper porous plug 210 and the lower porous plug 220. Here, the plurality of fluid particles 230 are particles that can flow along the shape of the space to be filled. The plurality of fluid particles 230 are filled in the through-hole 1111h between the upper porous plug 210 and the lower porous plug 220. The heat transfer gas can flow through the gaps between the plurality of fluid particles 230. Furthermore, in the through-hole 1111h filled with the plurality of fluid particles 230, the movement distance (mean free path) of electrons in the voltage application direction (vertical direction, up-down direction) can be shortened. This makes it possible to suppress abnormal discharge of the heat transfer gas in the through-hole 1111h filled with the plurality of fluid particles 230.

[0035] Next, another example of a structure for suppressing abnormal discharge will be described with reference to Fig. 3. Fig. 3 is an example of a cross-sectional view of the support base main body 111 of the substrate support part 11 according to the second embodiment.

[0036] The support base main body (also referred to as the main body in the second embodiment) 111 includes a base 1110, an electrostatic chuck 1111, and an adhesive layer 1112. A ceramic member 1111a of the electrostatic chuck 1111 is fixed via the adhesive layer 1112 onto the base (conductive base) 1110 including a conductive member.

[0037] The support base main body 111 has a substrate support surface (upper surface) 111S1 and a back surface (lower surface) 111S2 opposite to the substrate support surface 111S1.

[0038] The ceramic member 1111a of the electrostatic chuck 1111 has an upper surface (the substrate support surface 111S1 of the support base main body 111) and a lower surface. The lower surface of the electrostatic chuck 1111 is the surface that is bonded to the base 1110 via an adhesive layer 1112. The ceramic member 1111a of the electrostatic chuck 1111 has a through-hole (upper through-hole) 1111h that extends from the lower surface to the upper surface (the substrate support surface 111S1 of the support base main body 111).

[0039] The base 1110 has an upper surface and a lower surface (the back surface 111S2 of the support body 111). The upper surface of the base 1110 is the surface that is bonded to the ceramic member 1111a via an adhesive layer 1112. The base 1110 has a through-hole (lower through-hole) 1110h that extends from the lower surface (the back surface 111S2 of the support body 111) to the upper surface.

[0040] The through holes 111h include a through hole 1110h and a through hole 1111h. The through holes 1110h and the through holes 1111h are formed, for example, coaxially so that heat transfer gas can flow between them.

[0041] An upper porous plug 210 and a lower porous plug 220 are provided in a through hole 111h formed in the support base main body 111. Specifically, the upper porous plug 210 is disposed in the through hole (upper through hole) 1111h. The lower porous plug 220 is disposed in the through hole (lower through hole) 1110h.

[0042] The upper porous plug 210 and the lower porous plug 220 have a porous structure that allows the heat transfer gas to flow in the axial direction of the through-hole 111h (the vertical direction in the example of FIG. 3). Furthermore, the upper porous plug 210 and the lower porous plug 220 can shorten the movement distance (mean free path) of electrons in the voltage application direction (vertical direction, vertical direction) in the space in which the upper porous plug 210 and the lower porous plug 220 are disposed. This makes it possible to suppress abnormal discharge of the heat transfer gas in the upper porous plug 210 and the lower porous plug 220.

[0043] In addition, at least one of the upper porous plug 210 and the lower porous plug 220 is detachably provided to the support base main body 111. In the example shown in FIG. 3, the upper porous plug 210 is fixed to the ceramic member 1111a, and the lower porous plug 220 is detachably provided to the base 1110. For example, a female thread portion 1110t is formed in the base 1110. The lower porous plug 220 is formed in a substantially cylindrical shape, and a male thread portion 220t that screws into the female thread portion 1111t is formed on the circumferential surface. This allows the lower porous plug 220 to be detachably provided to the base 1110.

[0044] 3, the lower porous plug 220 is detachably provided, but the present invention is not limited to this, and the upper porous plug 210 may be detachably provided with respect to the ceramic member 1111a. Furthermore, both the upper porous plug 210 and the lower porous plug 220 may be detachably provided with respect to the support base main body 111 (ceramic member 1111a, base 1110).

[0045] Furthermore, in the through hole 111h, a plurality of fluid particles 230 are filled between the upper porous plug 210 and the lower porous plug 220. Here, the plurality of fluid particles 230 are particles that can flow along the shape of the space to be filled. The plurality of fluid particles 230 are filled in the through hole 111h between the upper porous plug 210 and the lower porous plug 220. The heat transfer gas can flow through the gaps between the plurality of fluid particles 230. Furthermore, in the through hole 111h filled with the plurality of fluid particles 230, the movement distance (mean free path) of electrons in the voltage application direction (vertical direction, up-down direction) can be shortened. This makes it possible to suppress abnormal discharge of the heat transfer gas in the through hole 111h filled with the plurality of fluid particles 230.

[0046] FIG. 4 is an example of a cross-sectional view of the support base main body 111 of the substrate support 11 according to the second embodiment during heat input.

[0047] The through hole 111h penetrates the interface between the lower surface of the ceramic member 1111a and the upper surface of the base 1110. During plasma processing, a difference in thermal expansion between the ceramic member 1111a and the base 1110 causes misalignment at the interface. This causes a misalignment between the axis of the through hole 1110h and the axis of the through hole 1111h, deforming the shape of the through hole 111h. In contrast, in the support base main body 111 of the substrate support 11 according to the second embodiment, the multiple fluid particles 230 filled in the through hole 111h can follow the deformation of the shape of the through hole 111h. This allows the heat transfer gas to flow and suppresses abnormal discharge, even if the shape of the through hole 111h is deformed due to heat input.

[0048] Next, the flowable particles 230 in the support base main body 111 of the substrate support 11 according to the first embodiment (see FIG. 2) and the support base main body 111 of the substrate support 11 according to the second embodiment (see FIGS. 3 and 4) will be further described. Figures 5A to 5C are schematic diagrams showing examples of flowable particles 230, 230A, and 230B.

[0049] As shown in FIG. 5A, flowable particles 230 may be particles formed of a solid, bulk, non-porous material.

[0050] For example, the flowable particles 230 may be particles formed of a Si-containing material. Specifically, the flowable particles 230 may be particles formed of Si as the Si-containing material.

[0051] Furthermore, the flowable particles 230 may be particles formed of SiO2 as a Si-containing material. For example, in a process of etching Si on the substrate W, by using SiO2 as the flowable particles 230, consumption of the flowable particles 230 can be suppressed.

[0052] Furthermore, the flowable particles 230 may use any one of SiC, Poly-Si, etc. as the Si-containing material.

[0053] Furthermore, the material of the fluid particles 230 may be a ceramic material (for example, Al2O3, etc.), a metal (for example, Al, etc.), or a resin material (for example, polytetrafluoroethylene (PTFE), etc.).

[0054] As shown in FIG. 5B, the flowable particle 230A may be a particle formed having an inner particle 231A and a protective film 232A that coats the surface of the inner particle 231A.

[0055] The material of the internal particle 231A may be a resin material. For example, polytetrafluoroethylene (PTFE) can be used as the resin material of the internal particle 231A. Furthermore, a Si-containing coating can be used as the protective film 232A. Furthermore, SiC can be used as the material of the Si-containing film. This allows the dielectric constant and / or thermal expansion coefficient of the flowable particle 230A to be adjusted by the material of the internal particle 231A, while coating the internal particle 231A with the radical-resistant protective film 232A, thereby suppressing wear of the flowable particle 230A. In one embodiment, each of the multiple flowable particles 230 is (i) a flowable particle 230 formed of a Si-containing material, or (ii) a flowable particle 230A formed of a resin material 231A and a Si-containing coating 232A on the resin material 231A. In one embodiment, the plurality of flowable particles 230 includes (i) at least one flowable particle 230 formed of a Si-containing material and (ii) at least one flowable particle 230A formed of a resin material 231A and a Si-containing coating 232A on the resin material 231A.

[0056] As shown in FIG. 5C , the flowable particles 230C may be particles formed of a porous material. This can improve the conductance of the gas flow path while suppressing the mean free path. In one embodiment, each of the plurality of flowable particles 230 is (i) a flowable particle 230 formed of a Si-containing material, (ii) a flowable particle 230A formed of a resin material 231A and a Si-containing coating 232A on the resin material 231A, or (iii) a flowable particle 230C formed of a porous material. In one embodiment, the plurality of flowable particles 230 includes (i) a flowable particle 230 formed of a Si-containing material, (ii) a flowable particle 230A formed of a resin material 231A and a Si-containing coating 232A on the resin material 231A, and (iii) a flowable particle 230C formed of a porous material.

[0057] Next, the particle diameter of the flowable particles 230 (230A, 230B) will be described. Here, the upper porous plug 210 has a first maximum pore diameter. Furthermore, the lower porous plug 220 has a second maximum pore diameter. The flowable particles 230 (230A, 230B) have particle diameters larger than the first maximum pore diameter and the second maximum pore diameter. By having such a relationship, it is possible to prevent the flowable particles 230 filled in the space surrounded by the upper porous plug 210 and the lower porous plug 220 from leaking out to the outside.

[0058] Next, a method for recycling the substrate support 11 will be described with reference to Fig. 6A to Fig. 6C. Fig. 6A to Fig. 6C are examples of cross-sectional views of the electrostatic chuck 1111 in each step of the recycling process for the substrate support 11. Here, the case where the upper porous plug 210, the lower porous plug 220, and the flowable particles 230 are arranged in the configuration shown in Fig. 2 will be described as an example.

[0059] 6A shows a used electrostatic chuck 1111 of the substrate support 11. In the used electrostatic chuck 1111, a plurality of used flowable particles 230C are filled in the through-holes 1111h between the upper porous plug 210 and the lower porous plug 220. The used flowable particles 230C are assumed to have been consumed by, for example, plasma.

[0060] First, a step of removing the detachable porous plug (at least one of the upper porous plug 210 and the lower porous plug 220) from the ceramic member 1111a is performed. Here, as shown in Fig. 6B, the detachable lower porous plug 220 is removed from the ceramic member 1111a.

[0061] Next, a step of removing a plurality of used flowable particles 230C from through-hole 1111h is performed. Here, as shown in Fig. 6B, a plurality of used flowable particles 230C are removed from through-hole 1111h. Note that ultrasonic vibration may be applied to ceramic member 1111a to promote the discharge of used flowable particles 230C.

[0062] Next, a step of filling the through holes 1111h with unused flowable particles 230 is performed. Here, a plurality of unused flowable particles 230 are filled into the through holes 1111h. When filling the flowable particles 230, ultrasonic vibrations may be applied to the ceramic member 1111a. This allows the flowable particles 230 to be densely packed. For example, if the flowable particles 230 are spherical, by filling the through holes 1111h with the flowable particles 230 while applying ultrasonic vibrations, the flowable particles 230 can be aligned within the through holes 1111h to form, for example, a hexagonal close-packed structure.

[0063] Then, a step is performed in which the removed porous plug (at least one of the upper porous plug 210 and the lower porous plug 220) is attached to the ceramic member 1111a, thereby replacing the flowable particles 230 and regenerating the substrate support 11, as shown in FIG.

[0064] Even when the upper porous plug 210, the lower porous plug 220, and the flowable particles 230 are arranged in the configuration shown in FIG. 3, the substrate support 11 can be regenerated in the same manner.

[0065] Furthermore, although the removable porous plug has been described as the lower porous plug 220, the present invention is not limited thereto and may be the upper porous plug 210. In this case, the flowable particles 230 can be replaced without removing the electrostatic chuck 1111 adhered by the adhesive layer 1112 from the base 1110. Furthermore, when removing used flowable particles 230C, a gas may be supplied from below and the used flowable particles 230C discharged from the through-holes 1111h may be sucked. In this case, the flowable particles 230 can be replaced without removing the base 1110 from the plasma processing chamber 10.

[0066] Furthermore, by making the lower porous plug 220 detachable, it is possible to prevent the used flowable particles 230C and the unused flowable particles 230 from adhering to the substrate mounting surface.

[0067] 7A to 7C are cross-sectional views of an example of a support base main body 111 of a substrate support 11 according to another embodiment. Here, an example will be described in which the upper porous plugs 210, the lower porous plugs 220, and the flowable particles 230 are arranged in the configuration shown in Fig. 2. The base 1110 is not shown.

[0068] 7A shows an example of a case where fluid particles 240 of different particle sizes (particle size of fluid particles 240<particle size of fluid particles 230) are filled. As shown in FIG. 7A, by filling fluid particles 240 with a smaller particle size than fluid particles 230, the gaps between the particles can be changed. In other words, the conductance of the heat transfer gas can be changed.

[0069] 7B, a plurality of fluid particles (first fluid particles) 230 having a first particle size and a plurality of fluid particles (second fluid particles) 240 having a second particle size smaller than the first particle size are filled into the through-hole 1111h. In this manner, the fluid particles 230 and 240 having different particle sizes may be filled into the through-hole 1111h.

[0070] For example, it is preferable that the first particle size is in the range of 100 μm to 200 μm, and the second particle size is in the range of less than 30 μm. This allows the flowable particles 240 having the second particle size to fill the spaces between the flowable particles 230 having the first particle size, further shortening the mean free path and suppressing the occurrence of abnormal discharge.

[0071] Furthermore, the flowable particles 230 and the flowable particles 240 may be formed of the same material, or may be formed of different materials.

[0072] 7C, the through-holes 1111h are bent within the ceramic member 1111a. The flowable particles 230 can be suitably filled into the through-holes 1111h having such a shape.

[0073] As described above, by using a structure in which a plurality of fluid particles 230 are filled between the upper porous plug 210 and the lower porous plug 220 in the through holes 111h, 1111h through which the heat transfer gas flows, it is possible to ensure a small mean free path.

[0074] Furthermore, as shown in an example in FIG. 7C, the flowable particles 230 can be filled in accordance with the shape of the through-holes 111h, 1111h. In other words, the shape of the through-holes 111h, 1111h can be freely selected.

[0075] Furthermore, as shown in FIG. 5, the degree of freedom in selecting the material of the flowable particles 230 (230A, 230B) can be improved.

[0076] Also, as shown in FIG. 6, the substrate support 11 can be regenerated by replacing the flowable particles 230.

[0077] As shown in an example in FIGS. 7A and 7B, the conductance of the heat transfer gas can be controlled by controlling the particle size of the flowable particles 230 and 240.

[0078] The structure in which a plurality of flowable particles are filled between the upper and lower porous plugs in the gas flow path through which the gas flows may be applied to other configurations.

[0079] FIG. 8 is a cross-sectional view showing an example of the structure between the lower electrode and the plasma processing chamber 10 of the plasma processing apparatus 1. As shown in FIG.

[0080] A conductive member 1113 made of a conductive material and a member 1114 made of an insulating material are provided below a base 1110 that functions as a lower electrode.

[0081] A flow path forming member 300 that forms a flow path for the heat transfer gas is provided between the plasma processing chamber 10 and the conductive member 1113. The flow path forming member 300 is a substantially cylindrical member made of an insulating material and has a through hole 300h therein.

[0082] Here, the plasma processing chamber 10 is grounded. Meanwhile, at least one of a source RF signal, a bias RF signal, and a DC signal is supplied to the base 1110 and the conductive member 1113, which function as the lower electrode. As a result, a potential difference ΔV occurs between the plasma processing chamber 10 and the conductive member 1113. This potential difference may cause abnormal discharge within the through-hole 300h.

[0083] In contrast, the flow path forming member 300 includes an upper porous plug 310 and a lower porous plug 320 disposed in the through hole 300h, and a plurality of flowable particles 330 filled between the upper porous plug 310 and the lower porous plug 320 in the through hole 300h. At least one of the upper porous plug 310 and the lower porous plug 320 is detachably provided with respect to the flow path forming member 300. With such a configuration, abnormal discharge can be suppressed.

[0084] The upper porous plug 310, the lower porous plug 320, and the flowable particles 330 are similar to the upper porous plug 210, the lower porous plug 220, and the flowable particles 230 (230A, 230B, 240), and therefore a duplicated description will be omitted.

[0085] FIG. 9 is an example of a cross-sectional view showing the structure between the upper electrode and the plasma processing chamber 10 of the plasma processing apparatus 1. As shown in FIG.

[0086] The shower head 13, which functions as an upper electrode, has a cooling plate 131 and an electrode plate 132 formed of a conductive material. The cooling plate 131 and the electrode plate 132 are supported by the plasma processing chamber 10 via an insulating member 133.

[0087] A flow path forming member 400 that forms a flow path for the process gas is provided between the plasma processing chamber 10 and the cooling plate 131. The flow path forming member 400 is a substantially cylindrical member made of an insulating material and has a through hole 400h therein.

[0088] Here, the plasma processing chamber 10 is grounded. Meanwhile, at least one of a source RF signal, a bias RF signal, and a DC signal is supplied to the cooling plate 131 and the electrode plate 132, which function as upper electrodes. As a result, a potential difference ΔV occurs between the plasma processing chamber 10 and the cooling plate 131. This potential difference may cause abnormal discharge within the through-hole 400h.

[0089] In contrast, the flow path forming member 400 includes an upper porous plug 410 and a lower porous plug 420 disposed in the through hole 400h, and a plurality of flowable particles 430 filled between the upper porous plug 410 and the lower porous plug 420 in the through hole 400h. At least one of the upper porous plug 410 and the lower porous plug 420 is detachably provided with respect to the flow path forming member 400. With such a configuration, abnormal discharge can be suppressed.

[0090] The upper porous plug 410, the lower porous plug 420, and the flowable particles 430 are similar to the upper porous plug 210, the lower porous plug 220, and the flowable particles 230 (230A, 230B, 240), and therefore a duplicated description will be omitted.

[0091] The above-disclosed embodiments include, for example, the following aspects. (Appendix 1) a main body having a substrate support surface and a back surface opposite the substrate support surface, the main body having a through hole extending from the back surface to the substrate support surface; an upper porous plug and a lower porous plug disposed in the through hole, wherein at least one of the upper porous plug and the lower porous plug is detachable from the main body; a plurality of flowable particles filled between the upper porous plug and the lower porous plug in the through hole, Each of the plurality of flowable particles is (i) formed of a Si-containing material, or (ii) formed of a resin material and a Si-containing coating on the resin material. Board support. (Appendix 2) The body is formed of a ceramic material. 2. The substrate support of claim 1. (Appendix 3) the main body includes a conductive base and a ceramic member disposed on the conductive base; the through-holes include an upper through-hole formed in the ceramic member and a lower through-hole formed in the conductive base; the upper porous plug is disposed in the upper through-hole, The lower porous plug is disposed in the lower through-hole. 2. The substrate support of claim 1. (Appendix 4) The Si-containing material includes Si or SiO2. 4. The substrate support according to claim 1, wherein the substrate support is a substrate supporting member. (Appendix 5) The Si-containing coating comprises SiC. 4. The substrate support according to claim 1, wherein the substrate support is a substrate supporting member. (Appendix 6) The resin material includes polytetrafluoroethylene. 6. The substrate support of claim 5. (Appendix 7) the upper porous plug has a first maximum pore size; the lower porous plug has a second maximum pore size; each of the plurality of flowable particles has a particle size greater than the first maximum pore size and the second maximum pore size; 7. A substrate support according to any one of claims 1 to 6. (Appendix 8) The plurality of flowable particles a plurality of first flowable particles having a first particle size; a plurality of second flowable particles having a second particle size smaller than the first particle size; 8. The substrate support of claim 7. (Appendix 9) the first particle size is in the range of 100 μm to 200 μm, The second particle size is less than 30 μm. 9. The substrate support of claim 8. (Appendix 10) The first fluid particles and the second fluid particles are formed of the same material. 10. The substrate support of claim 8 or 9. (Appendix 11) The first fluid particles and the second fluid particles are formed of different materials. 10. The substrate support of claim 8 or 9. (Appendix 12) a main body having a substrate support surface and a back surface opposite the substrate support surface, the main body having a through hole extending from the back surface to the substrate support surface; an upper porous plug and a lower porous plug disposed in the through hole, at least one of the upper porous plug and the lower porous plug being detachable from the main body, the upper porous plug having a first maximum pore diameter, and the lower porous plug having a second maximum pore diameter; a plurality of flowable particles filled between the upper porous plug and the lower porous plug in the through hole, The plurality of flowable particles a plurality of first flowable particles having a first particle size greater than the first maximum pore size and the second maximum pore size; a plurality of second flowable particles having a second particle size that is larger than the first maximum pore size and the second maximum pore size and smaller than the first particle size; Board support. (Appendix 13) The body is formed of a ceramic material. 13. The substrate support of claim 12. (Appendix 14) the main body includes a conductive base and a ceramic member disposed on the conductive base; the through-holes include an upper through-hole formed in the ceramic member and a lower through-hole formed in the conductive base; the upper porous plug is disposed in the upper through-hole, The lower porous plug is disposed in the lower through-hole. 13. The substrate support of claim 12. (Appendix 15) the first particle size is in the range of 100 μm to 200 μm, The second particle size is less than 30 μm. 15. The substrate support according to any one of claims 12 to 14. (Appendix 16) The first fluid particles and the second fluid particles are formed of the same material. 16. The substrate support according to any one of claims 12 to 15. (Appendix 17) The first fluid particles and the second fluid particles are formed of different materials. 16. The substrate support according to any one of claims 12 to 15. (Appendix 18) 1. A method for refurbishment of a substrate support, comprising: The substrate support includes: a main body having a substrate support surface and a back surface opposite the substrate support surface, the main body having a through hole extending from the back surface to the substrate support surface; an upper porous plug and a lower porous plug disposed in the through hole, wherein at least one of the upper porous plug and the lower porous plug is detachable from the main body; a plurality of flowable particles filled between the upper porous plug and the lower porous plug in the through hole, The reproducing method includes: removing at least one of the detachable upper porous plug and the detachable lower porous plug from the main body; removing a plurality of spent flowable particles from the through-holes; filling the through holes with a plurality of virgin flowable particles; and attaching at least one of the removed upper porous plug and the removed lower porous plug to the main body portion. A method for regenerating a substrate support. (Appendix 19) the step of removing the plurality of used flowable particles from the through-holes and / or the step of filling the plurality of unused flowable particles into the through-holes are performed while applying ultrasonic vibrations to the main body portion. 19. A method for regenerating a substrate support according to claim 18.

[0092] The present invention is not limited to the configurations described in the above embodiments, but may be combined with other elements, etc. These aspects can be changed without departing from the spirit of the present invention, and can be appropriately determined depending on the application form.

[0093] This application claims priority based on Japanese Patent Application No. 2023-20288, filed on February 13, 2023, the entire contents of which are incorporated herein by reference. [Explanation of symbols]

[0094] W substrate 1. Plasma processing equipment 2. Control section 10 Plasma Processing Chamber 11 Board support part (board supporter) 17 Heat transfer gas supply section 111 Support stand main body (main body) 111h Through hole 111S1 Board support surface 111S2 Back side 1110 Foundation 1110h Through hole (lower through hole) 1110t female thread 1111 Electrostatic chuck 1111a Ceramic component (main body) 1111h Through hole (upper through hole) 1111S1 Board support surface 1111S2 Back side 1111t female thread 220t male thread 210 Upper porous plug 220 Lower porous plug 230, 230A, 230B, 240 Flowing particles

Claims

1. a main body having a substrate support surface and a back surface opposite the substrate support surface, the main body having a through hole extending from the back surface to the substrate support surface; an upper porous plug and a lower porous plug disposed in the through hole, wherein at least one of the upper porous plug and the lower porous plug is detachable from the main body; a plurality of flowable particles filled between the upper porous plug and the lower porous plug in the through hole, each of the plurality of flowable particles is (i) formed of a Si-containing material, or (ii) formed of a resin material and a Si-containing coating on the resin material; Board support.

2. The body is formed of a ceramic material. The substrate support of claim 1 .

3. the main body includes a conductive base and a ceramic member disposed on the conductive base; the through-holes include an upper through-hole formed in the ceramic member and a lower through-hole formed in the conductive base; the upper porous plug is disposed in the upper through-hole, The lower porous plug is disposed in the lower through-hole. The substrate support of claim 1 .

4. The Si-containing material is Si or SiO ２ Including, The substrate support according to any one of claims 1 to 3.

5. the Si-containing coating comprises SiC; The substrate support according to any one of claims 1 to 3.

6. The resin material includes polytetrafluoroethylene. The substrate support of claim 5 .

7. the upper porous plug has a first maximum pore size; the lower porous plug has a second maximum pore size; each of the plurality of flowable particles has a particle size greater than the first maximum pore size and the second maximum pore size; The substrate support according to any one of claims 1 to 3.

8. The plurality of flowable particles a plurality of first flowable particles having a first particle size; a plurality of second flowable particles having a second particle size smaller than the first particle size; The substrate support of claim 7.

9. the first particle size is in the range of 100 μm to 200 μm; The second particle size is less than 30 μm. The substrate support of claim 8 .

10. The first fluid particles and the second fluid particles are formed of the same material. The substrate support of claim 8 .

11. The first fluid particles and the second fluid particles are formed of different materials. The substrate support of claim 8 .

12. a main body having a substrate support surface and a back surface opposite the substrate support surface, the main body having a through hole extending from the back surface to the substrate support surface; an upper porous plug and a lower porous plug disposed in the through hole, at least one of the upper porous plug and the lower porous plug being detachable from the main body, the upper porous plug having a first maximum pore diameter, and the lower porous plug having a second maximum pore diameter; a plurality of flowable particles filled between the upper porous plug and the lower porous plug in the through hole, The plurality of flowable particles a plurality of first flowable particles having a first particle size greater than the first maximum pore size and the second maximum pore size; a plurality of second flowable particles having a second particle size that is larger than the first maximum pore size and the second maximum pore size and smaller than the first particle size; Board support.

13. The body is formed of a ceramic material. The substrate support of claim 12.

14. the main body includes a conductive base and a ceramic member disposed on the conductive base; the through-holes include an upper through-hole formed in the ceramic member and a lower through-hole formed in the conductive base; the upper porous plug is disposed in the upper through-hole, The lower porous plug is disposed in the lower through-hole. The substrate support of claim 12.

15. the first particle size is in the range of 100 μm to 200 μm; The second particle size is less than 30 μm. The substrate support according to any one of claims 12 to 14.

16. The first fluid particles and the second fluid particles are formed of the same material. The substrate support of claim 15.

17. The first fluid particles and the second fluid particles are formed of different materials. The substrate support of claim 15.

18. 1. A method for refurbishment of a substrate support, comprising: The substrate support includes: a main body having a substrate support surface and a back surface opposite the substrate support surface, the main body having a through hole extending from the back surface to the substrate support surface; an upper porous plug and a lower porous plug disposed in the through hole, wherein at least one of the upper porous plug and the lower porous plug is detachable from the main body; a plurality of flowable particles filled between the upper porous plug and the lower porous plug in the through hole, The reproducing method includes: removing at least one of the detachable upper porous plug and the detachable lower porous plug from the main body; removing a plurality of spent flowable particles from the through-holes; filling the through holes with a plurality of virgin flowable particles; and attaching at least one of the removed upper porous plug and the removed lower porous plug to the main body portion. A method for regenerating a substrate support.

19. the step of removing the plurality of used flowable particles from the through-holes and / or the step of filling the plurality of unused flowable particles into the through-holes are performed while applying ultrasonic vibrations to the main body portion. The method for refurbishment of a substrate support according to claim 18.

Images