Energy storage system

Abstract

To increase the versatility of power supply devices. [Solution] The system comprises a power storage device and a power supply device, and the power storage device has data that identifies the power storage device. The energy storage device has an energy storage body and whether or not it supplies power supplied from the power supply device to the energy storage body. A switch controls the conduction state of the switch according to a control signal input from the power supply device. The power supply device has a control circuit that has a control function, and the power supply device receives data input from the energy storage device. This signal processing system has the function of identifying the energy storage device, generating a control signal, and outputting it to the energy storage device. It has a circuit.

Description

Technical Field

[0001] The present invention relates to products (including machines, manufactures, compositions, and position-of-matter), and methods (including processes, simple methods, and production methods). In particular, one aspect of the present invention relates to a power storage system, a power storage device, a semiconductor device, a display device, a light-emitting device, or other electrical equipment, or a manufacturing method thereof. In particular, one aspect of the present invention relates to a power storage system, a power storage device, a semiconductor device, a display device, a light-emitting device, or other electrical equipment having an oxide semiconductor, or a manufacturing method thereof. (including machines, manufactures, compositions, and position-of-matter), and methods (including processes, simple methods, and production methods). In particular, one aspect of the present invention relates to a power storage system, a power storage device, a semiconductor device, a display device, a light-emitting device, or other electrical equipment, or a manufacturing method thereof. In particular, one aspect of the present invention relates to a power storage system, a power storage device, a semiconductor device, a display device, a light-emitting device, or other electrical equipment having an oxide semiconductor, or a manufacturing method thereof. [[ID=S13]]

Background Art

[0002] In recent years, power storage devices are mounted in various electrical equipment such as portable terminals typified by mobile phones and smartphones, power tools, and electric vehicles. The power storage device has a secondary battery such as a lithium-ion battery that can store electricity by charging and can be repeatedly used.

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[0023] [Figure 1] [Figure 2] [Figure 3] [Figure 4] [Figure 5] [Figure 6] [Figure 7] [Figure 8]The power supply methods described in Patent Documents 1 and 2 use a power supply device that conforms to the specifications of the energy storage device. By doing so, the energy storage device can be charged. [Prior art documents] [Patent Documents]

[0007] [Patent Document 1] Japanese Patent Publication No. 2010-109778 [Patent Document 2] Japanese Patent Publication No. 2012-125115 [Overview of the project] [Problems that the invention aims to solve]

[0008] In one aspect of the present invention, one of the objectives is to improve the versatility of the power supply device.

[0009] Alternatively, in one aspect of the present invention, the objective is to improve the versatility of an energy storage system using a power supply device. It will be one of the options.

[0010] Alternatively, in one aspect of the present invention, one of the objectives is to reduce the power consumption of the energy storage device.

[0011] Alternatively, in one aspect of the present invention, one of the objectives is to improve the reliability of the energy storage device.

[0012] Alternatively, in one aspect of the present invention, one of the objectives is to provide a novel energy storage device. In one aspect of the present invention, one of the objectives is to provide a good energy storage device.

[0013] One aspect of the present invention aims to provide a semiconductor device with low off-current. One aspect of the present invention aims to provide a semiconductor device with low power consumption. One embodiment aims to provide a semiconductor device using a transparent semiconductor layer. Alternatively, this invention One aspect of the invention aims to provide a semiconductor device using a highly reliable semiconductor layer.

[0014] In particular, one aspect of the present invention can solve at least one of the problems listed above. There may be cases where this is the case. Furthermore, one aspect of the present invention does not necessarily need to solve all of these problems. This shall be the case. Furthermore, any other issues will become clear from the description in the specification, drawings, claims, etc. This is the result, and other issues can be extracted from the description in the specification, drawings, claims, etc. It is possible to do so. [Means for solving the problem]

[0015] In one aspect of the present invention, for example, at least one of a power storage device and a power supply device is utilized. That's fine.

[0016] In one aspect of the present invention, data that identifies the energy storage device (also called identification data) is used to identify the energy storage device By optimizing the charging conditions of the storage device, for example, multiple storage devices with different specifications depending on the power supply device can be used. This enables charging of electrical devices, thereby improving their versatility.

[0017] In this specification, the data used to identify the energy storage device refers to the mechanical characteristics of the energy storage device and the data used to identify the energy storage device. The specifications of the energy storage device, such as its electrical characteristics, the degree of deterioration, and the remaining amount of stored electrical energy. This refers to information that includes the internal workings of the energy storage device. For example, the average of the energy storage device. Voltage, capacity of the energy storage device, energy density of the energy storage device, resistance of the energy storage device, output power of the energy storage device Power, cycle characteristics of the energy storage device, temperature of the energy storage device, operating temperature range of the energy storage device, allowance of the energy storage device Information such as charging current capacity may be provided. Alternatively, information about the energy storage device may include the manufacturer of the energy storage device. - This may include the serial number of the energy storage device, the weight of the energy storage device, the size of the energy storage device, etc. The identification data may also be used as individual identification data.

[0018] One aspect of the present invention comprises a power storage device and a power supply device, wherein the power storage device identifies the power storage device The energy storage device has data and supplies power supplied from the power supply device to the energy storage body. A switch controls whether or not the switch is on, and the continuity of the switch is controlled according to a control signal input from the power supply device. The power supply device has a control circuit that has a function to control the state, and the power supply device receives input from the energy storage device. A signal that identifies energy storage devices based on data, generates control signals, and outputs them to the energy storage devices. This is an energy storage system that has a processing circuit.

[0019] One aspect of the present invention is an energy storage device comprising a power receiving circuit, a data communication circuit, an energy storage body, and power receiving A first transistor is placed between the circuit and the energy storage body, and the energy storage body and the first transistor are connected. The circuit has a control circuit that is electrically connected to the first transistor, and the control circuit has a gate of the first transistor. A processor electrically connected to the processor, and memory electrically connected to the processor, and It has a controller electrically connected to the separator and memory, and the memory is an energy storage device The processor has data to identify, and it has registers, and the registers are sent from the energy storage to the processor. A first memory circuit that holds data during the period when power is supplied to the sasser, and a processor that receives power from the energy storage device. It has a second memory circuit that holds data during the period when the power supply to the system is interrupted, and The memory circuit 2 has a second transistor that controls the writing and retention of data, and the second The transistor is suitable for energy storage devices where the off-current per 1 μm of channel width is 100 zA or less. That is the case. [Effects of the Invention]

[0020] According to one aspect of the present invention, the versatility of a power supply device or an energy storage system using a power supply device is increased. It is possible.

[0021] According to one aspect of the present invention, the power consumption of an energy storage device can be reduced.

[0022] According to one aspect of the present invention, the reliability of an energy storage device can be improved. [Brief explanation of the drawing]

[0023] [Figure 1] A diagram illustrating an example of an energy storage system. [Figure 2] A diagram illustrating an example of the device. [Figure 3] A diagram illustrating an example circuit. [Figure 4] A diagram illustrating an example of the device. [Figure 5] A diagram illustrating an example of a method for driving an energy storage system. [Figure 6] A diagram illustrating an example circuit. [Figure 7] A diagram illustrating an example of a register. [Figure 8] A diagram illustrating an example of memory. [Figure 9] A diagram illustrating an example of the device's structure. [Figure 10] A diagram illustrating an example of an energy storage device. [Figure 11] A diagram illustrating an example of an energy storage device. [Figure 12] A diagram illustrating an example of an energy storage device. [Figure 13] A diagram illustrating an example of an energy storage device. [Figure 14] A diagram illustrating some examples of energy storage devices. [Figure 15] A diagram illustrating some examples of energy storage devices. [Figure 16] A diagram illustrating some examples of energy storage devices. [Figure 17] A diagram illustrating an example of an energy storage device. [Figure 18] A diagram illustrating an example of electrical equipment. [Figure 19] A diagram illustrating an example of electrical equipment. [Figure 20] A diagram illustrating an example of electrical equipment. [Figure 21] A diagram illustrating an example of electrical equipment. [Figure 22] A diagram illustrating an example of electrical equipment. [Figure 23] A diagram illustrating an example of electrical equipment. [Figure 24] A diagram illustrating an example of electrical equipment. [Figure 25] A diagram showing the charge and discharge characteristics of an energy storage device. [Modes for carrying out the invention]

[0024] The embodiments will be described below with reference to the drawings. However, the embodiments may differ in many ways. It is possible to implement it in any manner, and without deviating from its purpose and scope, its form and It is easy for those skilled in the art to modify the details in various ways. Therefore, the present invention is described below. The description of the embodiment shown is not limited to the details shown. In addition, in the configuration described below, similar Symbols indicating objects are shown using common symbols across different drawings, representing the same part or similar function. Detailed explanations of the relevant parts will be omitted.

[0025] Furthermore, the content described in one embodiment (even a part of it) may vary depending on the form of its implementation. Other content (even partial content) described in the tone, and / or one or more other implementations To apply, combine, or replace the content described in the form (even if only a part of it is acceptable), It is possible to do things like this.

[0026] Furthermore, the content described in each embodiment refers to the use of various figures in each embodiment. This refers to the content stated, or the content stated using the text described in the specification.

[0027] Furthermore, a diagram (even a part of it) described in one embodiment may refer to another part of that diagram. Further figures (even partial ones) described in that embodiment, and / or one or more figures. In another embodiment, the diagram (or even just a part of it) described above can be combined by And it is possible to construct even more diagrams.

[0028] In this specification, active elements (transistors, diodes, etc.), passive elements ( For all terminals of capacitive elements, resistive elements, etc., the destination of their connection is not specified. However, a person skilled in the art may be able to constitute one aspect of the invention. In other words, connection Even without specifying prior art, if one aspect of the invention is clear and described herein, etc. In some cases, this may be possible. In particular, if there are multiple connection destinations for the terminal, the connection destination of the terminal It is not necessary to limit it to a specific location. Therefore, active elements (transistors, diodes, etc.) ), only for some terminals of passive elements (capacitive elements, resistive elements, etc.), In some cases, it is possible to constitute an embodiment of the invention by specifying the preceding or succeeding part.

[0029] Furthermore, any content not specified in the drawings or text within the specification will be excluded. An invention can be constructed that defines this. Alternatively, for a certain value, it can be indicated by an upper limit and a lower limit, etc. If a range of values ​​is specified, you may arbitrarily narrow that range, or select one of the values ​​within that range. By excluding a point, the invention can be defined by partially excluding the numerical range. Thus, for example, It can be specified that previous technologies do not fall within the technical scope of the present invention.

[0030] Furthermore, in this specification, etc., if a certain circuit is specified, then at least the connection destination is identified, and this applies to our business. If you are an expert, you may be able to identify the invention. Or, for a certain circuit, If the function is specified, a person skilled in the art may be able to specify the invention. Therefore, if the function is specified, it is determined that one aspect of the invention is clear and described in this specification, etc. In some cases, it is possible to do so. Therefore, for a given circuit, it is possible to connect without specifying its function. To specify the prior art, it is disclosed as one aspect of the invention and constitutes one aspect of the invention. It is possible to do so. Alternatively, for a given circuit, it is possible to identify its function without specifying the connection destination. If so, it is disclosed as one aspect of the invention and can constitute one aspect of the invention. It is Noh.

[0031] Furthermore, ordinal numbers such as 1st, 2nd, etc. are added to avoid confusion of the constituent elements, and each constituent element The number is not limited to ordinal numbers.

[0032] (Embodiment 1) Figure 1(A) shows an example of the configuration of an energy storage system. The energy storage system shown in Figure 1(A) It comprises device 100 and device 200.

[0033] Device 100 is supplied with power from device 200. Alternatively, device 100 can be supplied with power from another power source. Power may be supplied. Device 100 has the function of inputting and outputting signals. Device 10 Device 0 may have the function of receiving power wirelessly. In this case, device 10 0 may be used as a power receiving device. Alternatively, device 100 may have a function that allows it to store energy. Alternatively, the device 100 may be used as a power storage device. It may have the function of being able to receive power and the function of being able to store power. In this case, the device 100 may be a power receiving device, a power storage device, or a semiconductor device. The device 100 includes A protective circuit has the function of preventing damage to the device 100 due to overcharging and over-discharging. A road may be constructed.

[0034] Device 100 has data 110. Data 110 is a data for identifying device 100. For example, a memory is provided in the device 100, and data 110 is stored in the memory. This is also acceptable. Furthermore, data 110 may be used as identification data.

[0035] The device 200 is powered by an external power supply 240 (see Figure 4). For example, commercial power may be used. Device 200 has the function to supply power to device 100. The device 200 has the function of inputting and outputting signals. The device 200 has power It may also have a function that allows it to transmit power wirelessly. In this case, the device 200 is a power transmission device. It may be placed as such. Alternatively, the device 200 may have a function that allows it to supply power to the energy storage device. It is also possible that the device 200 is a power supply device. It has the function of being able to transmit power wirelessly, and the function of being able to supply power to a power storage device. It is also possible to do so. In this case, the device 200 may be a power transmission device, a power supply device, or a semiconductor device. stomach.

[0036] In the energy storage system shown in Figure 1(A), power is supplied wirelessly from device 200 to device 100. This is possible. In the energy storage system shown in Figure 1(A), device 200 and device 1 are connected wirelessly. Signals can be transmitted and received between 00 and 00. Therefore, non-contact communication is possible between device 200 and device 100. Signals can be transmitted and received between them. However, this is not limited to this, as shown in Figure 1(B), By connecting device 100 to device 200, power is supplied from device 200 to device 100. Alternatively, by connecting device 100 to device 200, device 200 and device 10 Signals may be transmitted to and received between 0.

[0037] When supplying power or signals wirelessly, for example, radio waves in the 13.56 MHz band are used. This is possible. However, it is not limited to this, for example, the 135kHz band, 433MHz band, 95 Radio waves in the 2MHz band, 2.45GHz band, etc., may also be used.

[0038] Furthermore, when power is supplied wirelessly, for example, electromagnetic induction, electric field resonance, and magnetic field resonance are used. A method such as a microwave method can be used.

[0039] Note that connection refers to an electrical connection, a functional connection, and a direct connection. This includes cases where... Furthermore, the connection relationships of each component shown in the embodiment are as shown in the diagram or text. It is not limited to just the relationship between the two parties.

[0040] For example, when two objects are electrically connected, another element capable of electrical connection (for example) Switches, transistors, inductors, resistors, diodes, display elements, light-emitting elements, A load (or similar) may be placed between the two objects.

[0041] If two objects are functionally connected, then another circuit capable of functional connection (for example, Logic circuits (inverters, NAND gates, NOR gates, etc.), signal conversion circuits (DA conversion circuits) (AD conversion circuit, gamma correction circuit, etc.), or potential level conversion circuit (power supply circuit (boost circuit) (Step-down circuits, etc.) or level shifter circuits, etc.), voltage sources, current sources, switching circuits, amplifiers Circuits (operational amplifiers, differential amplifiers, source follower circuits, buffer circuits, etc.), signal generation A circuit, memory circuit, or control circuit (such as a control circuit) may be placed between the two objects.

[0042] Note that a switch can be in a conductive state (on) or a non-conductive state (off), and current flows through it. It has a function to control whether or not to flow current, or a function to select and switch the path through which the current flows. For example, a switch allows current to flow through a first path, or a second path. It has a function to select and switch whether or not to allow current to flow through the path.

[0043] Next, an example of the configuration of the device 100 will be explained using the circuit diagrams in Figures 2(A) and 2(B). .

[0044] The energy storage unit 111 has an energy storage function. The energy storage unit 111 has a pair of terminals. One side, for example, transistors 131, 132, and 170 One end is connected to terminal b of device 100, and the other end is connected to terminal d. Furthermore, the energy storage unit 1 By providing two or more terminals on 11 and supplying power from an external power source via these terminals, storage The battery 111 may be charged.

[0045] In addition to lithium-ion batteries, other types of energy storage devices 111 include lead-acid batteries and lithium-ion poly batteries. Secondary batteries, nickel-metal hydride batteries, nickel-cadmium batteries, nickel-iron batteries, Secondary batteries such as zinc-zinc batteries and silver oxide-zinc batteries, redox flow batteries, zinc • Liquid-recirculating secondary batteries such as chlorine batteries and zinc-bromine batteries, aluminum-air batteries, and zinc-air batteries. Batteries, mechanical charge-type rechargeable batteries such as air-iron batteries, sodium-sulfur batteries, lithium High-temperature operating secondary batteries such as um-iron sulfide batteries can be used. However, this is not limited to these. Alternatively, the energy storage body 111 may be constructed using, for example, a lithium-ion capacitor.

[0046] One of the sources and drains of transistor 132 is connected to the energy storage device 111, and the other is connected to the source and drain. It is connected to either the source or the drain of transistor 131. Transistor 131 and Transistor 132 has the function of controlling the charging and discharging of the energy storage body 111. The transistor 131 and transistor 132, for example, overcharge and over-discharge of the energy storage unit 111. It can function as a protective switch to prevent this. Alternatively, transistor 1 31 and transistor 132 adjust the current flowing to the energy storage body 111 and circuit 113. It has the function of being able to do the following. A circuit having transistor 131 and transistor 132, It may also be used as a protection circuit to control the charging and discharging of the energy storage body 111. Furthermore, transistor 131 and Transistor 132 may also be used as a switch. Transistors 131 and 13 When the switch is turned off by configuring the switch using 2, The current flowing through the parasitic diodes generated in transistors 131 and 132 It can be made smaller. Note that the configuration is not limited to those shown in Figures 2(A) and 2(B), and examples include... For example, one transistor or three or more transistors may be used. Instead of transistors 131 and 132, use a bipolar transistor, diode, or You may also use logic circuits that combine these elements.

[0047] The gate potentials of transistors 131 and 132 are determined, for example, by circuit 113. It will be controlled.

[0048] Circuit 113 includes, for example, transistors 131 and 132, and 150. The circuit 113 has the function of being able to control the conduction state of transistor 170. It has a function that can monitor the charge state of the energy storage unit 111. You may use this as your circuit. Alternatively, you can use a microcomputer, FPGA (Field Processor) for circuit 113. Programmable Gate Array), or CPU (Central It can also be called a Processing Unit.

[0049] Circuit 113 includes, for example, memory, a processor, and a controller. The memory includes, for example, For example, data 110 is stored. The processor generates a control signal based on data 110. It has the capability to control the memory and processor. Furthermore, memory stores, for example, program data necessary to run the processor. This is also acceptable. As program data, for example, the data signal input from circuit 142 Transistor 131, transistor 132, transistor 150, and transistor Examples include program data that instructs the processor to control the potential of 170 gates. ru.

[0050] Circuit 141 includes antenna 114, circuit 115, and circuit 116. It has the function of receiving power wirelessly. Note that circuit 141 is the power receiving circuit. That's fine.

[0051] Antenna 114 may also be used as an antenna circuit. In this case, the antenna circuit is an antenna It has a capacity and capacity.

[0052] Circuit 115 rectifies the alternating current generated by receiving radio waves via antenna 114. It has the function of being able to do so. Circuit 115 may also be a rectifier circuit. Note that it is not necessarily the case that It is not necessary to provide road 115.

[0053] Circuit 116 has the function of smoothing the AC rectified by circuit 115. Circuit 116 may also be used as a regulator.

[0054] Transistor 150 is provided, for example, between the energy storage body 111 and the circuit 141. One of the sources and drains of transistor 150 is connected to circuit 116, and the other is connected to the transistor. It is connected to the other side of the source and drain of 131. Transistor 150 is connected to, for example, circuit 1 It has a function that allows control whether or not to charge the energy storage unit 111 with the power received at 41. Oh, transistor 150 can also be used as a switch.

[0055] The gate potential of transistor 150 is controlled, for example, by circuit 113. (See Figure 2) The configuration is not limited to those shown in (A) and Figure 2(B); for example, multiple transistors may be used. Also, instead of transistor 150, you can use a bipolar transistor, diode, or... You may also use logic circuits that combine these elements.

[0056] Circuit 142 includes antenna 118 and circuit 119. Circuit 142 receives data signals It has the function of transmitting and receiving. Note that circuit 142 may also be used as a transmitting / receiving circuit. Circuit 142 may also be used as a data communication circuit.

[0057] Antenna 118 may also be used as an antenna circuit. In this case, the antenna circuit is an antenna It has a capacity and capacity.

[0058] Note that instead of antennas 114 and 118, one antenna is used in circuit 115 and circuit You can also connect to 119.

[0059] Circuit 119 has the function of generating a data signal from radio waves received via antenna 118. Circuit 119 has, for example, functional circuits such as a rectifier circuit, a demodulation circuit, and a modulation circuit. Alternatively, the circuit 119 can be configured with an analog baseband circuit and a digital baseband circuit. Functional circuits such as a control circuit may be provided. Alternatively, circuit 119 may have an interface. Alternatively, circuit 119 may be used as a signal generation circuit.

[0060] A carrier wave may be used as the radio wave. A carrier wave is an AC signal, also called a carrier. Data signals are exchanged using the carrier wave. This includes modulated radio waves (modulated waves).

[0061] Circuit 119, as shown in Figure 3 for example, includes circuit 191, interface 192, and It has a path 193 and a circuit 194.

[0062] Circuit 191 has the function of demodulating the received radio waves and extracting data. 91 may also be used as a demodulation circuit.

[0063] Interface 192 has the ability to control the input and output of signals from circuits 119 and 113. It has. Note that it is not necessarily required to provide interface 192.

[0064] Circuit 193 has the function of being able to modulate the signal input via interface 192. Circuit 193 may also be used as a modulation circuit.

[0065] Circuit 194 has the function of amplifying the voltage of the modulated signal and adjusting the signal. Oh, circuit 194 can also be used as an amplification circuit.

[0066] Circuit 121 has the function of smoothing the voltage output from the energy storage device 111. This can be used as a regulator. Note that circuit 121 is not necessarily required.

[0067] Transistor 170 is transmitted via transistors 131 and 132, for example, as shown in Figure 2. As shown in (B), it is installed between the load 143 and the energy storage device 111. Transistor 17 One of the sources and drains of transistor 0 is connected to the other source and drain of transistor 131. The process continues. Transistor 170 controls the supply (discharge) of power from the energy storage body 111 to the load. It has the capability to perform certain functions. Note that transistor 170 may also be used as a switch.

[0068] The gate potential of transistor 170 is controlled by circuit 113. (See Figure 2(A)) Furthermore, the configuration is not limited to that shown in Figure 2(B), and for example, multiple transistors may be used.

[0069] The device 100 has the function of outputting a power supply voltage V1 via terminals a and d. Terminal a For example, a potential Va may be given to terminal d. That's fine. For example, the potential Va may be set to a higher potential than the potential Vd. Device 100 has terminal b It has the function of outputting a power supply voltage V2 via terminal d. Terminal b has, for example, a potential Vb A potential may be given. For example, the potential Vb may be set to a potential higher than the potential Vd.

[0070] Terminal c can accept, for example, control signals to control circuit 113. For example, the number of control signals A corresponding number of terminals c are provided. As a control signal, for example, I 2 C standard bus signals, etc. You can use it.

[0071] The above describes the configuration example of the device 100 shown in Figures 2(A) and 2(B).

[0072] Next, an example of the configuration of the device 200 will be explained using Figures 4(A) and 4(B).

[0073] Circuit 211 has the function of being able to identify the input data 110. Furthermore, circuit 211 It has the function of generating and outputting a signal based on data 110. Note that circuit 211 It may also be used as a signal processing circuit.

[0074] Circuit 211 includes, for example, memory, a processor, and a controller. The memory includes, for example, For example, it may store the program data necessary to run the processor. For example, a program that causes the processor to adjust power consumption according to identification data. RAM data is one example.

[0075] Circuit 230 includes antenna 212, circuit 213, circuit 214, and circuit 215. Circuit 230 is capable of generating data signals from radio waves received via antenna 212. It has the ability. Furthermore, circuit 230 may be used as a transmitting / receiving circuit. Alternatively, circuit 230 may be used as a data transmission circuit. It can also be used as a signal circuit.

[0076] Antenna 212 may also be used as an antenna circuit. In this case, the antenna circuit is an antenna It has a capacity and capacity.

[0077] Circuit 213 is connected to antenna 212. Circuit 213 is connected, for example, via antenna 212. It has the function of demodulating the received radio waves and extracting the data signal. The data includes, for example, data 110. Note that circuit 213 is a demodulation circuit. That's good too.

[0078] Circuit 214 is connected to circuit 211. Circuit 214 receives input from, for example, circuit 211. It has the function of being able to modulate the signal. Note that circuit 214 may also be used as a modulation circuit.

[0079] Modulation methods include, for example, amplitude modulation, frequency modulation, and phase modulation. good.

[0080] Circuit 215 has the function of, for example, amplifying a modulated data signal and adjusting the data signal. Circuit 215 may also be used as an amplification circuit. Note that it is not always necessary to include circuit 215. stomach.

[0081] Circuit 231 includes circuit 221, circuit 222, and antenna 223. The power supply circuit may be used as the power supply circuit. Alternatively, circuit 231 may be used as the power transmission circuit. Note that in Figure 4(B) As shown, the device 200 may be equipped with a sensor 235. The sensor 235 measures displacement, position, Speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness Degree, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation It has the function to measure. This allows, for example, the sensor 235 to be used with the device 10 It is also possible to determine whether or not a value is 0.

[0082] Circuit 221 has the function of oscillating an AC wave, for example, to supply power. Circuit 22 Circuit 1 may be used as an oscillator.

[0083] Circuit 222 has the function of amplifying and adjusting an AC wave, for example. This is also acceptable. Furthermore, it is not always necessary to provide circuit 222.

[0084] The AC wave is output as radio waves via antenna 223. It may also be a tenter circuit. In this case, the antenna circuit has an antenna and capacitance.

[0085] The device 200 may be supplied with power from, for example, a commercial power source.

[0086] Next, as an example of a driving method for the energy storage system according to this embodiment, the energy storage system shown in Figure 1(A) An example of a method for driving the system will be explained using the flowchart in Figure 5. Note that the device 100 The configuration of the main unit is shown in Figure 2(B), and the configuration of the device 200 is shown in Figure 4(A).

[0087] In the example of the drive method for the energy storage system shown in Figure 1(A), step S1 is performed using radio waves. A confirmation signal is sent from the unit 200 to the device 100. For example, the confirmation signal is sent approximately once every few seconds. It is preferable to do so.

[0088] Next, in step S2, the device 100 receives an acknowledgment signal.

[0089] At this time, the circuit 119 included in the circuit 142 extracts a confirmation signal, and this confirmation signal is used Output is sent to channel 113.

[0090] Next, in step S3, the device 100 generates a response signal corresponding to the received acknowledgment signal. Then transmit to device 200.

[0091] At this time, circuit 113 retrieves the necessary program data from memory based on the confirmation signal data. The data is read and executed by the processor to generate a response signal. The response signal is provided by device 100. This also includes the identifying data 110.

[0092] For example, the signal response method between device 100 and device 200 is ISO 15693. Alternatively, a method compliant with standards such as ISO14443 can be used. Uses a method compliant with standards such as ear Field Communication. It is possible. Examples of NFC standards include NFCIP-1 (ISO18092). It is possible.

[0093] Alternatively, the position of the device 100 may be detected using a response signal. For example, using circuit 211 By determining the distance to device 100 from the response signal, the position of device 100 can be detected. .

[0094] Furthermore, the radio waves containing the response signal generated by circuit 142 are transmitted to device 200.

[0095] Next, as step S4, the device 200 receives a response signal, and the received response signal includes Identify data 110.

[0096] For example, circuit 230 extracts a response signal from the received radio waves, and the extracted response signal is sent to circuit 2 Output to 11.

[0097] Circuit 211 identifies the device 100 from the data 110 contained in the input response signal. For example, data identifying the device 100 is stored in memory beforehand, and the data It can be identified by comparing 110. Furthermore, as step S5, stored from the response signal The system determines whether charging the electric body 111 is necessary and possible.

[0098] If it is determined that charging is unnecessary or impossible, the operation of circuit 231 is stopped. For example, The controller of circuit 211 is used to stop the supply of power voltage to circuit 231. This allows the operation of circuit 231 to be stopped.

[0099] If it is determined that charging is necessary and possible, step S6 is performed by discharging from device 200 to device 10 Start transmitting power to 0.

[0100] Even if it is determined that charging is necessary, the charge stored in the energy storage unit 111 will be zero. Instead, the charge necessary for the operation of the device 100, such as the power to operate circuit 113, is stored in the energy storage. It is preferable that it is stored in 111.

[0101] At this time, the operation of circuit 231 is started and AC is transmitted to device 100, thereby enabling device 1 Supply power to 00.

[0102] Furthermore, depending on the data used to identify the device 100, for example, the frequency or amplitude of the AC to be transmitted may be determined. By changing the parameters, the amount of power supplied to device 100 can be optimized. For example, device 10 The power supply time can be adjusted according to the capacity of the energy storage unit 111. Furthermore, the circuit By controlling the conversion efficiency of the amplified AC using 211, the frequency of the AC to be transmitted is controlled. Alternatively, the amplitude and other parameters can be changed.

[0103] Next, as step S7, the device 100 is started to receive power and the charge storage unit 111 is started. For example, device 100 uses an electromagnetic induction method, an electric field resonance method, a magnetic field resonance method, or a micro Power can be received using methods such as wave-based systems.

[0104] The power supplied from device 200 is adjusted by circuit 141. Furthermore, circuit 113 Turning on transistors 131, 132, and 150 The energy storage unit 111 is then charged.

[0105] Next, in step S8, the voltage Vbt of the energy storage unit 111 is brought to a level equal to or below the reference voltage Vref by charging. It determines whether the voltage is above or below the reference voltage. For example, circuit 113 determines whether the voltage Vbt and the reference voltage Vref are above or below the reference voltage. It is possible to compare them.

[0106] If the voltage Vbt is determined to be less than the reference voltage Vref, the energy storage unit 111 continues to be charged. do.

[0107] On the other hand, if the voltage Vbt is determined to be equal to or greater than the reference voltage Vref, the circuit 113 will trigger The generator 150 is turned off, and as step S9, a stop signal is sent via circuit 142. The wave is transmitted to device 200. Note that if the voltage Vbt is determined to be equal to or greater than the reference voltage Vref, Transistors 131 and 132 may be turned off. This allows storage This prevents overcharging of the battery 111.

[0108] Even if the voltage Vbt is less than the reference voltage Vref, for example, if the user forces the device 1 There are times when you want to release 00 and end the charging of the battery storage 111. In that case, for example, sensor 2 The position of device 100 is detected by 35, and the value of the position data of device 100 exceeds the threshold. In some cases, the operation of circuit 231 may be stopped by circuit 211. Alternatively, for example, while power is being supplied... If device 200 sends a confirmation signal to device 100 and there is no response signal from device 100, the circuit The operation of circuit 231 may be stopped by 211.

[0109] Next, as step S10, when the device 200 receives a radio wave with a stop signal, circuit 21 Circuit 213 extracts a stop signal in step 3 and outputs the extracted stop signal to circuit 211.

[0110] Circuit 211 stops the operation of circuit 231 when a stop signal is input. For example, circuit 2 By using controller 11 to stop supplying power voltage to circuit 231, This allows the operation of circuit 231 to be stopped. In this way, the operation of circuit 231 can be stopped during periods when it is not needed. By stopping it, power consumption can be reduced.

[0111] Subsequently, transistors 131, 132, and 17 are used as needed. By turning 0 ON, the power supply voltage V1 can be output via terminals a and d, and storage Power can be supplied from the power unit 111 to the load. Alternatively, transistor 131, transistor 13 2. By turning on transistor 170, electricity is transmitted through terminals b and d. It can output a source voltage V2 and supply power from the energy storage unit 111 to the load.

[0112] The above is an explanation of an example of a drive method for an energy storage system.

[0113] As explained using Figures 1 to 5, in an example of the energy storage system according to this embodiment, By identifying device 100 with device 200 using separate data, the most Because charging can be performed under suitable conditions, for example, charging can be performed regardless of the specifications of the device 100. It is possible. Conventional energy storage devices, for example, have specifications set individually for each mobile device, and the specifications are If they were different, it was necessary to prepare different power supply devices. For example, connecting the power supply cable If the connecting connectors are different, other power supply devices cannot be used. Therefore, if the specifications are different... If a user has multiple mobile devices, they will need several power supply devices, which is inconvenient. In this embodiment, for example, it is not necessary to change the device 200 depending on the specifications of the device 100. Because it lacks certain features, it can be made highly versatile.

[0114] An example was shown in which device 100 is identified by device 200 using identification data. One embodiment of the present invention is not limited thereto. Depending on the circumstances, Depending on the circumstances, identification data may not be required. Therefore, it is not necessary to identify device 100 using device 200.

[0115] (Embodiment 2) In this embodiment, an example of the configuration of circuit 113 will be explained with reference to Figure 6.

[0116] Circuit 113 consists of a processor 710, a bus bridge 711, and RAM (Random Acc). Memory) 712, memory interface 713, controller 720, Interrupt controller 721, I / O interface (input / output interface) 72 2, and a power gate unit 730.

[0117] Furthermore, circuit 113 includes a crystal oscillator circuit 741, a timer circuit 745, and an I / O interface. I / O ports 746, comparator 751, I / O interface 752 , bus line 761, bus line 762, bus line 763, and data bus line 76 It has 4. Furthermore, the circuit 113 has at least one connection terminal 77 as a connection part to an external device. It has terminals 0 to 776. Note that each terminal 770 to 776 is one It represents a terminal or a group of terminals consisting of multiple terminals. Also, an oscillator 742 having a crystal oscillator 743. However, it is connected to circuit 113 via connection terminals 772 and 773.

[0118] Processor 710 has register 785 and bus line 76 via bus bridge 711 It is connected to bus line 763 and data bus line 764.

[0119] Memory 712 is a storage device that can function as the main memory of processor 710. For example, random access memory is used. Memory 712 is connected to processor 71 0 represents the instruction to be executed, the data required to execute the instruction, and the data processed by the processor 710. It is a device for storing data. According to instructions from processor 710, it writes data to memory 712. Data is written and read. Note that the data 110 shown in Figure 1 is stored in memory 712. That's fine.

[0120] In circuit 113, power supply to memory 712 is cut off when in low-power mode. Therefore, memory 712 is memory that can retain data even when power is not supplied. It is preferable that it be composed of the following.

[0121] The memory interface 713 is an input / output interface to an external storage device. According to instructions from the decoder 710, the memory interface 713 is connected to terminal 776. Data is written to and read from the connected external storage device.

[0122] The clock generation circuit 715 generates the clock signal MCLK (hereinafter referred to as) used by the processor 710. It is a circuit that generates MC (also simply called "MCLK") and includes an RC oscillator, etc. LK is also output to controller 720 and interrupt controller 721.

[0123] The controller 720 is a circuit that performs control processing for the entire circuit 113, for example, the bus and me Control of Morimap and other components, power supply control of circuit 113, clock generation circuit 715, crystal oscillator circuit It can control the 741, among other things.

[0124] Connection terminal 770 is a terminal for inputting external interrupt signals, and via connection terminal 770, An unscalable interrupt signal NMI is input to controller 720. When the unmaskable interrupt signal NMI is input to 0, controller 720 immediately The unmaskable interrupt signal NMI is output to the processor 710, which then intercepts the processor 710. Execute the complex processing.

[0125] Additionally, the interrupt signal INT is input to the interrupt controller 721 via the connection terminal 770. The interrupt controller 721 receives interrupt signals (T0IRQ) from peripheral circuits. P0IRQ and C0IRQ are also input without going through the bus (761 to 764).

[0126] The interrupt controller 721 has the function of assigning priority to interrupt requests. When the controller 721 detects an interrupt signal, it checks whether the interrupt request is valid. Determine whether it is valid or not. If it is a valid interrupt request, an interrupt signal is sent to the controller 720. T Field.

[0127] Furthermore, the interrupt controller 721, via the I / O interface 722, bus route It is connected to line 761 and data bus line 764.

[0128] When the interrupt signal INT is input to the controller 720, it interrupts the processor 710. The signal INT is output, causing processor 710 to execute the interrupt handler.

[0129] Furthermore, the interrupt signal T0IRQ does not go through the interrupt controller 721 but is instead transmitted to the controller 72 It may be directly input to 0. Controller 720 receives interrupt signal T0IRQ. When this happens, the processor 710 outputs an unmaskable interrupt signal NMI, and the processor The 710 is made to execute the interrupt handler.

[0130] This allows, for example, a sensor to be installed in the device 100 to detect changes in the voltage of the energy storage body 111, and the device 100 The system may detect changes in the distance between the device 200 and the device itself, and perform interrupt processing according to the detection result. For example, the power supply by device 200 may be stopped in response to an interrupt.

[0131] The controller 720's register 780 is located within the controller 720 and is an interrupt control. Register 786 of controller 721 is located on I / O interface 722. .

[0132] Next, the peripheral circuits included in circuit 113 will be described. Circuit 113 includes, as peripheral circuits, a timer circuit 745, an I / O port 750, and a comparator 751. These peripheral circuits are an example, and depending on the electrical device in which circuit 113 is used, necessary circuits can be provided.

[0133] The timer circuit 745 has a function of measuring time using a clock signal TCLK ( hereinafter also simply referred to as "TCLK") output from the clock generation circuit 740. Also, the clock generation circuit 715 outputs an interrupt signal T0IRQ to the controller 720 and the interrupt controller 721 at determined time intervals. The timer circuit 745 is connected to the bus line 761 and the data bus line 764 via an I / O interface 746.

[0134] TCLK is a clock signal with a frequency lower than that of MCLK. For example, if the frequency of MCLK is on the order of several MHz (e.g., 8 MHz), TCLK is on the order of several tens of kHz (e.g., 32 kHz). The clock generation circuit 740 has a crystal oscillation circuit 741 built in circuit 113 and an oscillator 742 connected to connection terminals 772 and 773. A crystal oscillator 743 is used as the oscillator of the oscillator 7 42. Note that by configuring the clock generation circuit 740 with a CR oscillator or the like, all modules of the clock generation circuit 740 can be built in circuit 113.

[0135] The I / O port 750 is an interface for inputting and outputting information with an external device connected via a connection terminal 774, and is a digital signal input / output interface. For example, ​​​​​​​​If so, the I / O port 750 is connected to the circuit 119 via the connection terminal 774, and is connected to the transistor 131 via the connection terminal 7 74, connected to the transistor 13 2 via the connection terminal 774, connected to the transistor 150 via the connection terminal 774, and the connection terminal 774 is connected to the transistor 170 via the connection terminal 774, and is connected to the power storage element 111 via the connection terminal 774 For example, the I / O port 750 outputs an interrupt signal P0IRQ to the interrupt controller 721 according to the input digital signal. Note that a plurality of connection terminals 774 are provided and are connected to the transistor 150 via the circuit 119, the transistor 131, the transistor 132, and the connection terminal 774, and are connected to the transistor 170 via the connection terminal 774, and are connected to the power storage element 111 via the connection terminal 774.

[0136] The comparator 751 can compare, for example, the potential (or current) of the analog signal input from the connection terminal 7 and the potential (or current) of the reference signal, and can generate a digital signal with a value of 0 or 1. Further, when the value of this digital signal is 1, the comparator 751 can generate an interrupt signal C0IRQ. The interrupt signal C0IRQ is output to the interrupt controller 7 21. Further, the comparator 751 can compare, for example, a signal indicating the voltage Vbt of the power storage element 111 input via the connection terminal 774 and a signal indicating the reference voltage Vref .

[0137] The I / O port 750 and the comparator 751 are connected to the bus line 761 and the data bus line 764 via a common I / O interface 752. Here, there is a circuit that can be shared by the I / O interfaces of each of the port 750 and the comparator 751. ​​​ Therefore, it is configured with one I / O interface 752, but I / O port 750, The I / O interface for comparator 751 can also be provided separately.

[0138] Furthermore, the registers of the peripheral circuits are located in the corresponding input / output interfaces. Register 787 of circuit 745 is located on I / O interface 746, I / O port Register 783 of register 750 and register 784 of comparator 751 are, respectively, I It is located in the / O interface 752.

[0139] Circuit 113 has a power gate unit 730 for shutting off the power supply to the internal circuit. The power gate unit 730 supplies power only to the circuits necessary for operation. This allows for a reduction in the overall power consumption of circuit 113.

[0140] As shown in Figure 6, Unit 701, Unit 702, Unit 702, Unit 702 are enclosed by dashed lines within Circuit 113. The circuits of unit 703 and unit 704 are connected via power gate unit 730 to the connection terminals. It is connected to 771. Connection terminal 771 is connected to, for example, the energy storage unit 111.

[0141] In this embodiment, unit 701 includes a timer circuit 745 and an I / O interface Unit 702 includes I / O port 750, comparator 751, and I The / O interface 752 is included, and unit 703 is the interrupt controller 721. and I / O interface 722, unit 704 includes processor 710, memo Includes R712, bus bridge 711, and memory interface 713.

[0142] The power gate unit 730 is controlled by the controller 720. The power gate uni t 730 has switches 731 and 732 for cutting off the supply of the power voltage to units 701 to 704. At this time, as the power voltage, for example, the voltage of the power storage body 11 1 can be used.

[0143] The on / off states of the switch 731 and the switch 732 are controlled by the controller 720. Specifically, the controller 720 outputs a signal for turning off some or all of the switches of the power gate unit 7 30 according to the request of the processor 710 (stopping the power supply). Further, the controller 720 outputs a signal for turning on the switches of the power gate unit 7 30 by triggering the non-maskable interrupt signal NMI or the interrupt signal T0IRQ from the timer circuit 745 (starting the power supply).

[0144] In FIG. 6, the power gate unit 730 is shown with a configuration having two switches (switch 731 and sw itch 732), but it is not limited to this, and the number of switches necessary for power cut-off may be provided.

[0145] Also, in the present embodiment, the switch 731 is provided so that the power supply to the unit 701 can be independently controlled, and the switch 732 is provided so that the power supply to the units 702 to 704 can be independently controlled. However, it is not limited to such a power supply path. For example, a switch different from the switch 732 may be provided so that the power supply to the memory 712 can be independently controlled. Also, a plurality of switches may be provided for one circuit.

[0146] Furthermore, the controller 720 has a connection terminal that is always connected without going through the power gate unit 730. The power supply voltage is supplied from 771. Also, to reduce the influence of noise, clock generation is performed. The oscillator circuit 715 and the crystal oscillator circuit 741 each have a different power supply voltage than the power supply circuit. The power potential is supplied from an external power supply circuit.

[0147] By including the controller 720 and the power gate unit 730, the circuit 11 It is possible to operate unit 3 in three different operating modes. The first operating mode is normal operation. This is a mode in which all circuits of circuit 113 are active. Here, the first movement The operation mode is called "Active mode".

[0148] In the first operating mode, the response is based on an acknowledgment signal from the device 200 shown in Embodiment 1, for example. The generation of response signals and other related processes take place.

[0149] The second and third operating modes are low-power modes that activate some circuits. This is the second operating mode. In the second operating mode, the controller 720 and the timer circuit 745 And its related circuits (crystal oscillator circuit 741, I / O interface 746) are active. Yes. In the third operating mode, only controller 720 is active. Here, The second operating mode is called "Noff1 mode," and the third operating mode is called "Noff2 mode." We will call it "Do". In Noff1 mode, the controller 720 and some of the peripheral circuits ( The circuitry required for timer operation is activated, and in Noff2 mode, only the controller 720 operates. It is working.

[0150] Furthermore, the oscillator of the clock generation circuit 715 and the crystal oscillator circuit 741 are independent of the operating mode. Power is supplied continuously. The clock generation circuit 715 and the crystal oscillator circuit 741 are kept inactive. To enable it, input an enable signal from the controller 720 or externally, and then cross This is done by stopping the oscillation of the crystal generation circuit 715 and the crystal oscillator circuit 741.

[0151] In addition, in Noff1 and Noff2 modes, power is supplied by the power gate unit 730. Because it is blocked, I / O port 750 and I / O interface 752 are inactive. It becomes e, but in order for the external device connected to terminal 774 to operate properly, I / Power is supplied to some of the O port 750 and I / O interface 752. Specifically This is the output buffer for I / O port 750, and register 783 for I / O port 750. In Noff1 and Noff2 modes, the actual functionality of I / O port 750 is as follows: / O interface 752 and data transmission function with external devices, interrupt signal generation function It is stopped. Similarly, the communication function of I / O interface 752 is also stopped. ru.

[0152] In this specification, a circuit being inactive means that the power supply has been cut off and the circuit has stopped. In addition to the state in which it is present, it is also the state in which the main functions in Active mode (normal operation mode) are stopped. This includes states that operate in a more power-efficient mode than Active mode.

[0153] By using the above configuration, for example, a user can forcibly terminate the charging operation of device 100. In that case, the power gate unit 730 has a switch at the request of the processor 710. It outputs a signal that turns off part or all of the function, switching to Noff1 or Noff2 mode. It's also possible to stop the power supply to unnecessary circuit blocks.

[0154] Furthermore, examples of register configurations applicable to each circuit block will be explained with reference to Figure 7. .

[0155] The register shown in Figure 7(A) consists of memory circuit 651, memory circuit 652, selector 653 and , has.

[0156] The memory circuit 651 receives the reset signal RST, the clock signal CLK, and the data signal D. The memory circuit 651 processes the data signal D that is input according to the clock signal CLK. It has the function of holding data and outputting it as a data signal Q. The memory circuit 651 is, for example, For example, it is possible to configure registers such as buffer registers and general-purpose registers. Or, The memory circuit 651 is SRAM (Static Random Access Memory). A cache memory consisting of registers such as mory can also be provided. The cache memory can save data to the memory circuit 652.

[0157] The memory circuit 652 receives a write control signal WE, a read control signal RD, and a data signal. The input is received. For example, the write control signal WE, the read control signal RD, etc., are transmitted via terminal c. You may enter it as is.

[0158] The memory circuit 652 records the data of the input data signal according to the write control signal WE. The device then stores the data and outputs it as a data signal according to the read control signal RD. To have the ability.

[0159] The selector 653, according to the read control signal RD, either receives the data signal D or the memory circuit 652. Select the output data signal and input it to the memory circuit 651.

[0160] The memory circuit 652 is provided with a transistor 631 and a capacitive element 632.

[0161] Transistor 631 is an n-channel transistor and functions as a selection transistor. It has the ability. One of the sources and drains of transistor 631 is the output of memory circuit 651. It is connected to the terminal. Furthermore, the power supply potential is supplied to the back gate of transistor 631. It is supplied. Transistor 631 outputs from memory circuit 651 according to the write control signal WE. It has a function to control the retention of the powered data signal.

[0162] For transistor 631, for example, a transistor with a low off-current may be used. Examples of transistors with low current include oxides, which have a wider bandgap than silicon. A transistor having a channel-forming region containing a semiconductor, wherein the channel-forming region is substantially of type i. ZISTA can be applied.

[0163] For example, remove as many impurities as possible, such as hydrogen or water, and supply oxygen to prevent oxygen deficiency. By reducing it as much as possible, a transistor containing the above oxide semiconductor can be fabricated. At this time, In the channel formation region, secondary ion mass spectrometry (SIMS (Secondary I Hydrogen, which is called a donor impurity, is measured using mass spectrometry. The amount is 1 × 10 19 / cm 3 The following is preferably 1 × 10 18 / cm 3 Reduce to the following: This is preferable. The off-current of transistor 631 is 1 × 1 per 1 μm of channel width at 25°C. 0 -19 A(100zA) or less. More preferably 1 × 10 -22 A(100yA) The following applies: The lower the transistor's off-current, the better, but the off-current of the transistor... The lower limit of the current is approximately 1 × 10⁻⁶. -30 It is estimated to be A / μm.

[0164] Examples of the above oxide semiconductors include In-based metal oxides, Zn-based metal oxides, and In-Zn-based Metal oxides, or In-Ga-Zn-based metal oxides, can be used.

[0165] One of the pair of electrodes of the capacitive element 632 is connected to the source and drain of the transistor 631. The other side is connected and supplied with the power supply potential VSS. Capacitive element 632 stores data signals It has the function of retaining charge based on the data of the number. The off current of transistor 631 is very Because the voltage is low, the charge in the capacitive element 632 is retained even if the power supply is interrupted, and the data is preserved. It is held.

[0166] Transistor 633 is a p-channel transistor. Source of transistor 633 The power supply potential VDD is supplied to one of the drains, and the gate receives the read control signal RD. The following is entered.

[0167] Transistor 634 is an n-channel transistor. Source of transistor 634 And one of the drains is connected to the other of the source and drain of transistor 633. Then, a read control signal RD is input to the gate.

[0168] The transistor 635 is an n-channel transistor. Source of transistor 635 And one of the drains is connected to the other of the source and drain of transistor 634. The power supply potential VSS is supplied to the other end of the source and drain.

[0169] The input terminal of inverter 636 is connected to the source and the other drain of transistor 633. It is done so. Also, the output terminal of inverter 636 is connected to the input terminal of selector 653. It can be done.

[0170] One of the pair of electrodes of the capacitive element 637 is connected to the input terminal of the inverter 636, and the other is connected to The power supply potential VSS is supplied. Capacitive element 637 receives the data input to inverter 636. It has the function of retaining charge based on signal data.

[0171] Furthermore, this is not limited to the above, but for example, phase-change memory (PRAM) RAM (also called PCM (Phase Change Memory)), resistor change Magnetic resistance memory (also known as ReRAM (Resistance RAM)), magnetoresistive memory It is written using a method such as MRAM (also called Magnetoresistive RAM). A memory circuit 652 may be configured. For example, as the MRAM, a magnetic tunnel junction element (MT MR (also known as J (Magnetic Tunnel Junction) element) AM can be applied.

[0172] Next, we will explain an example of a register driving method shown in Figure 7(A).

[0173] First, during normal operation, the power supply voltage, reset signal RST, and clock signal are used. CLK is supplied to the register. At this time, selector 653 is the data signal. The data of D is output to the memory circuit 651. The memory circuit 651 processes the data according to the clock signal CLK. The data of the input data signal D is held. At this time, the read control signal RD Transistor 633 turns ON, and transistor 634 turns OFF.

[0174] Next, during the backup period immediately before the power supply voltage is shut off, the write control signal WE According to the signal, transistor 631 turns on, and the data signal D is sent to memory circuit 652. The data is stored, and transistor 631 turns off. Then the crossover to the register is performed. The supply of the CLK signal is stopped, and then the reset signal RST to the register is stopped. The supply will be stopped. Note that when transistor 631 is ON, transistor 631 Positive power supply potential may be supplied to the back gate. In this case, the read control signal RD is used to Transistor 633 turns on, and transistor 634 turns off.

[0175] Next, during the power-off period, the supply of power voltage to the register is stopped. Because the off-current of transistor 631 in memory circuit 652 is low, the stored data is retained. This is done. Furthermore, by supplying the ground potential GND instead of the power potential VDD, the power supply This can also be considered as cutting off the supply of voltage. For example, the ground potential is at the terminal shown in Figure 2(A). It is supplied via d. Note that when transistor 631 is in the off state, transistor 63 You can maintain the off state of transistor 631 by supplying a negative power supply potential to the back gate of 1. stomach.

[0176] Next, during the recovery period immediately before returning to the normal operating period, the power supply voltage to the registers The supply is restarted, then the supply of the clock signal CLK is restarted, and then the reset signal The supply of signal RST is resumed. At this time, the wiring to which the clock signal CLK is supplied is connected to the power supply. Set the position to VDD, and then resume supplying the clock signal CLK. Furthermore, read Transistor 633 turns off in accordance with the pulse of the control signal RD. When 4 is turned ON, a data signal of the value stored in the memory circuit 652 is output to the selector 653. The selector 653 controls the data signal according to the pulse of the read control signal RD. The output is sent to the memory circuit 651. This returns the memory circuit 651 to its state immediately before the power-off period. It can be restored.

[0177] Subsequently, during the normal operation period, the memory circuit 651 performs normal operation again.

[0178] The above is an example of a register driving method shown in Figure 7(A).

[0179] Note that the register configuration is not limited to that shown in Figure 7(A).

[0180] For example, the register shown in Figure 7(B) has a different configuration compared to the register shown in Figure 7(A). Transistor 633, transistor 634, inverter 636, and capacitive element 637 are missing, It has a configuration with a register 654. For the same part as the register shown in Figure 7(A), see Figure 7. Refer to the register descriptions shown in (A) as appropriate.

[0181] At this time, one of the sources and drains of transistor 635 is connected to the input terminal of selector 653. It connects to the child.

[0182] Furthermore, the selector 654, according to the write control signal WE2, sets the power supply potential VS which will become the data. Select a data signal output from either S or memory circuit 651 and input it to memory circuit 652. .

[0183] Next, we will explain an example of a register driving method shown in Figure 7(B).

[0184] First, during normal operation, the power supply voltage, reset signal RST, and clock signal CLK are: The register is supplied with data. At this time, selector 653 is set to the data of data signal D. The signal is output to the memory circuit 651. The memory circuit 651 receives the input according to the clock signal CLK. The data of the data signal D is stored. Also, according to the write control signal WE2, selector 65 4 outputs the power supply potential VSS to the memory circuit 652. The memory circuit 652 performs write control Transistor 631 turns on in accordance with the pulse of signal WE, and the power supply to memory circuit 652 is turned on. The VSS position is stored as data.

[0185] Next, during the backup period immediately before the power supply voltage is shut off, the write control signal WE2 Therefore, the selector 654 uses the output terminal of the memory circuit 651 instead of supplying the power potential VSS. Then, one of the source and drain of transistor 631 becomes conductive. Furthermore, writing Transistor 631 turns on in accordance with the pulse of the control signal WE, and data is sent to memory circuit 652. The data of the data signal D is stored, and transistor 631 turns off. At this time, the data The data in the memory circuit 652 is rewritten only when the potential of signal D is the same as the power supply potential VDD. Furthermore, the supply of the clock signal CLK to the register is stopped, and the register is... The supply of the reset signal RST is stopped. Note that when transistor 631 is ON. Alternatively, a positive power supply potential may be supplied to the back gate of transistor 631.

[0186] Next, during the power-off period, the supply of power voltage to the register is stopped. In the memory circuit 652, the off-current of transistor 631 is low, so the data value is retained. It is maintained. Furthermore, by supplying the ground potential GND instead of the power potential VDD, the power It can also be considered that the voltage supply is cut off. When transistor 631 is in the off state, a negative power supply potential is supplied to the back gate of transistor 631. The transistor may be kept in the off state.

[0187] Next, during the recovery period immediately before returning to the normal operating period, the power supply voltage to the registers The power supply is resumed, then the supply of the clock signal CLK is resumed, and then the reset signal Restart the supply of RST. At this time, the wiring to which the clock signal CLK is supplied is brought to the power supply potential. Set to VDD, and then resume supplying the clock signal CLK. Selector 653 is According to the pulse of the read control signal RD, the value corresponding to the data stored in the memory circuit 652 The data signal is output to the memory circuit 651. This stores the state immediately before the power-off period. Circuit 651 can be restored.

[0188] Subsequently, during the normal operation period, the memory circuit 651 performs normal operation again.

[0189] The above is an example of a register driving method shown in Figure 7(B).

[0190] By using the configuration shown in Figure 7(B), the power supply potential VSS during the backup period is This eliminates the need to write data, thus speeding up operation.

[0191] When the above registers are used for registers 784 to 787, the mode changes from Active to Nof When transitioning to f1 or Noff2 mode, registers 784 to 78 are shut down prior to power cut-off. The data from memory circuit 651 is written to memory circuit 652, and the data from memory circuit 651 is written to memory circuit 652. The system will be reset to its initial settings, and the power will be shut off.

[0192] Also, when returning to Active from Noff1 or Noff2 mode, register 7 When power is restored to 84 through 787, the data in memory circuit 651 is first reset to its initial value. The data is then stored in memory circuit 652 and written to memory circuit 651.

[0193] Therefore, even in low power consumption mode, the data required for processing circuit 113 is stored in register 784 or Because it is held at 787, circuit 113 is switched from low-power mode to active mode. It becomes possible to restore it immediately. Therefore, the power consumption of device 100 can be reduced. can.

[0194] (Embodiment 3) In this embodiment, an example of a storage device will be described, specifically the memory 712 shown in Figure 6.

[0195] An example of the configuration of a storage device according to this embodiment will be described.

[0196] An example of a memory cell array is explained using Figure 8.

[0197] The memory cell array shown in Figure 8 consists of multiple memory cells (storage circuits) arranged in row I and column J. 00, wiring BL_1 to BL_J, wiring WL_1 to WL_I, wiring CL_1 to It comprises CL_I and wiring SL to which a predetermined potential is supplied.

[0198] In the memory cell array shown in Figure 8, there are M rows (where M is a natural number between 1 and I) and N rows (where N is between 1 and I). The memory cell 400 (memory cell 400(M,N)) in the column of the uppermost (J or less natural number) is, Zistor 411(M,N), transistor 412(M,N), and capacitive element 413(M,N) ) and are provided.

[0199] Furthermore, one of the sources and drains of transistor 411(M,N) is connected to wiring BL_N. It continues. Furthermore, the gate of transistor 411(M,N) is connected to wiring WL_M. Furthermore, a circuit using diodes and capacitors will cause transistor 411 to operate for a certain period of time. The potential of the back gate M,N may be maintained.

[0200] Furthermore, transistor 411(M,N) is an n-channel transistor, and data This is a selection transistor that controls writing and holding data.

[0201] Furthermore, the transistor 411(M,N) is a transistor with the low off-current described above. It is possible.

[0202] Transistor 412 is a p-channel transistor. Transistor 412(M,N One of the source and drain of ) is connected to wiring BL_N, and the other source and drain is It is connected to wiring SL. Also, the gate of transistor 412(M,N) is It is connected to the source and the other drain of sta411(M,N).

[0203] Transistor 412(M,N) is an output transistor that sets the potential of the output data. It has the function of being a .

[0204] One of the pair of electrodes of the capacitive element 413(M,N) is connected to the saw of transistor 411(M,N). It is connected to the other end of the drain and the other end is connected to wiring CL_M.

[0205] The capacitive element 413(M,N) functions as a data retention capacitor.

[0206] The above is a description of the example configuration of the memory cell array shown in Figure 8.

[0207] Next, an example of a method for driving a memory having the memory cell array shown in Figure 8 will be described. For example, data is sequentially written to memory cell 400 in row M, and then the written data This explanation describes, but is not limited to, cases where data is read.

[0208] First, when writing data to memory cell 400 in row M, set the potential of wiring WL_M to VH. Then, set the potential of all other wiring WL_other to VL.

[0209] Note that VH is a potential that is greater than, for example, the reference potential (e.g., power supply potential VSS) (e.g., electric potential). The source potential is VDD, and VL is a potential below the reference potential.

[0210] At this time, in each of the memory cells 400 in row M, the transistor 411 is ON. In this state, the potential of one of the pair of electrodes of the capacitive element 413 becomes equal to the potential of each wiring BL. ru.

[0211] Subsequently, transistor 411 turns off, and the gate of transistor 412 becomes floating. In this state, the gate potential of transistor 412 is maintained.

[0212] By performing the above operation row by row, data can be written to all memory cells 400. Cut.

[0213] Furthermore, when reading data from memory cell 400 in row M, the potential of all wiring WL is set to V Set the potential of wire CL_M to VL, and set the potential of all other wires CL_other to VH I'll do that.

[0214] Furthermore, in the memory cell 400 of row M, between the source and drain of transistor 412 The resistance value is determined by the gate voltage of transistor 412. Also, transistor 4 Memory cell 4 takes the potential value corresponding to the current flowing between the source and drain as data. It can be read starting from 00.

[0215] Furthermore, by repeating the above operation row by row, all memory cells 400 are able to process data. The data can be read. The above is an example of how memory is driven.

[0216] (Embodiment 4) In this embodiment, an example of the circuit structure of the device 100 will be explained using Figure 9. Examples of circuits include circuits 113, 115, 116, 119, and 121. These are some examples.

[0217] The apparatus 100 shown in Figure 9(A) is a transistor 801 containing silicon in the channel formation region. Furthermore, a transistor 802 containing an oxide semiconductor is stacked in the channel formation region, and This structure consists of multiple wiring layers stacked on top of the Rangitta 802.

[0218] Transistor 801 is provided on a semiconductor substrate having an embedded insulating layer.

[0219] Transistor 802 has a conductive layer 811a embedded in an insulating layer, and on top of the conductive layer 811a The insulating layer 814 is provided, and an oxide semiconductor is superimposed on the conductive layer 811a with the insulating layer 814 in between. Body layer 813, conductive layers 815a and 815b connected to oxide semiconductor layer 813, and oxide semiconductor An insulating layer 816 is provided on the conductive layer 813, conductive layers 815a and 815b, and insulating layer 81 It is composed of a conductive layer 818 superimposed on the oxide semiconductor layer 813 with 6 in between. The conductive layer 811a functions as a back gate electrode. The insulating layer 814 is a gate insulating layer. It functions as a marginal layer. The oxide semiconductor layer 813 functions as a channel-forming layer. The conductive layers 815a and 815b function as source electrodes or drain electrodes. The insulating layer 816 functions as a gate insulating layer. The conductive layer 818 is connected to the gate electrode and It has the function of being a .

[0220] The insulating layer 814 preferably has the function of blocking impurities such as hydrogen. The aluminum oxide layer, silicon nitride layer, etc., have the function of blocking hydrogen. Figure 9 In the configuration shown in (A), the oxide semiconductor layer 813 is surrounded by insulating layers 814 and 816. Therefore, to transistor 802, an insulated element such as hydrogen from an external source (e.g., transistor 801) is used. The diffusion of pure substances is suppressed.

[0221] Furthermore, the conductive layer 815a has an opening that penetrates the insulating layer 814, and the conductive layer 811 It is connected to a conductive layer 811b, which is formed of the same conductive film as a, and the conductive layer 811b is tra It is connected to the gate electrode of the inverter 801.

[0222] Furthermore, wiring layers 822, 824, and 826 are stacked in order on top of transistor 802. The wiring layer 822 is provided by the wiring layer 821 embedded in the insulating layer, which connects to the conductive layer 815b. The wiring layer 824 is connected to the wiring layer 822 by the wiring layer 823 embedded in the insulating layer. The wiring layer 826 is connected to the wiring layer 824 by the wiring layer 825 embedded in the insulating layer. It is connected to the following. For example, wiring layer 826 may be used as an external connection terminal.

[0223] Furthermore, the structure shown in Figure 9(B) consists of stacked transistors 801 and 802. Furthermore, multiple wiring layers are stacked between transistor 801 and transistor 802. It has a girder structure. Furthermore, Figure 9(B) also shows the terminal section 803.

[0224] On top of transistor 801, wiring layers 831a, 833a, and 835a are stacked in order. It can be done. Wiring layer 831a is connected to the gate electrode of transistor 801. Wiring layer 8 33a is connected to the wiring layer 831a by the wiring layer 832a embedded in the insulating layer. The wire layer 835a is connected to the wiring layer 833a by the wiring layer 834a embedded in the insulating layer. ru.

[0225] Furthermore, the conductive layer 815a has an opening that penetrates the insulating layer 814, and the conductive layer 811 It is connected to a conductive layer 811b formed of the same conductive film as a, and the conductive layer 811b is an insulating layer. The wiring layer 835a is connected to the wiring layer 836a embedded in the layer.

[0226] Furthermore, a wiring layer 838a is stacked on top of the transistor 802. 838a is connected to the conductive layer 815b by a wiring layer 837a embedded in the insulating layer.

[0227] Furthermore, the terminal portion 803 has a wiring layer 831 formed of the same conductive film as the wiring layer 831a. b, wiring layer 833b and wiring layer 835a, which are formed from the same conductive film as wiring layer 833a. Wiring layer 835b and conductive layer 811a are formed from the same conductive film. The conductive layer 811c and conductive layer 815a are formed from the same conductive film. c, wiring layer 837b and wiring layer 838a, which are formed from the same conductive film as wiring layer 837a. Wiring layers 838b, each formed from the same conductive film, are sequentially stacked and provided. b is embedded in the insulating layer and is a wiring layer 83 formed of the same conductive film as the wiring layer 832a. 2b connects to wiring layer 831b. Wiring layer 835b is embedded in the insulating layer and wiring The wiring layer 833b is connected to the wiring layer 834b by a wiring layer 834b formed from the same conductive film as layer 834a. The conductive layer 811c is embedded in the insulating layer and has the same conductive film as the wiring layer 836a. The formed wiring layer 836b connects to the wiring layer 835b. The conductive layer 815c is an insulating layer. It is connected to the conductive layer 811c through an opening provided through layer 814. The wiring layer 838b is , embedded in the insulating layer, wiring layer 837b is formed of the same conductive film as wiring layer 837a. This connects to the conductive layer 815c. For example, the wiring layer 838b is used as an external connection terminal. That's fine.

[0228] Furthermore, each component will be explained.

[0229] Conductive layers 811a to 811c, conductive layer 818, wiring layer 831a to wiring layer 838a For example, wiring layers 831b to 838b may be molybdenum, titanium, chromium, etc. Tal, magnesium, silver, tungsten, aluminum, copper, neodymium, ruthenium, Alternatively, a layer containing a metallic material such as scandium can be applied. In addition, conductive layer 811a to conductive Layers 811c, 818, wiring layer 831a to wiring layer 838a, wiring layer 831b to wiring layer 8 38b may be replaced with a metal oxide or the like.

[0230] Each insulating layer, including insulating layer 814 and insulating layer 816, may be, for example, a silicon oxide layer, a silicon nitride layer Cone layer, silicon oxide nitride layer, silicon nitride oxide layer, aluminum oxide layer, aluminum nitride Aluminum layer, aluminum oxide nitride layer, aluminum nitride oxide layer, hafnium oxide layer, aluminum oxide A lium layer or the like can be used. For example, as insulating layer 814 and insulating layer 816, acid A silicon oxide layer or a silicon oxide nitride layer can be used. It may also include [the specified element]. Furthermore, it is not necessarily required to provide insulating layers 814 and 816.

[0231] Examples of oxide semiconductor layers 813 include In-based metal oxides, Zn-based metal oxides, and In-Z n-based metal oxides or In-Ga-Zn-based metal oxides can be applied. Oxide semiconductor layer For example, it may have non-single crystals. Non-single crystals are, for example, CAAC(C Axis A It can be crystalline, polycrystalline, microcrystalline, or amorphous. Amorphous is microcrystalline. Furthermore, the defect level density is higher than that of CAAC. It's expensive. Furthermore, oxide semiconductors containing CAAC are called CAAC-OS (C Axis Ali It is called (gned Crystalline Oxide Semiconductor). The oxide semiconductor layer may have, for example, CAAC-OS. CAAC-OS is, for example The material has an oxide semiconductor that is c-axis oriented, and the a-axis and / or the b-axis are not macroscopically aligned.

[0232] Furthermore, instead of replacing some or all of the Ga contained in the above In-Ga-Zn metal oxides Metal oxides containing other metallic elements may also be used. Examples of these other metallic elements include gallium. Any metallic element that can bond with more oxygen atoms than um can be used, such as titanium or zirconium. If you use one or more of the following elements: conium, hafnium, germanium, and tin Good. Other metallic elements mentioned above include lanthanum, cerium, praseodymium, and neodymium. Samarium, Europium, Gadolinium, Terbium, Dysprosium, Holmium erbium, thulium, ytterbium, and lutetium, one or more of these elements These elements should be used. These metallic elements have a function as stabilizers. The amount of these metal elements added is the amount necessary for the metal oxide to function as a semiconductor. Using a metal element that can bond with more oxygen atoms than gallium, and furthermore, in metal oxides By supplying oxygen, the number of oxygen vacancies in metal oxides can be reduced.

[0233] Examples of conductive layers 815a to 815c include molybdenum, titanium, chromium, and tan. Tal, magnesium, silver, tungsten, aluminum, copper, neodymium, ruthenium, and A layer containing metallic materials such as scandium can be applied. In addition, conductive layer 815a to conductive layer Metal oxides or other materials may be used as 815c.

[0234] As shown in Figure 9, in an example of the apparatus 100 according to this embodiment, different transistors are added together. By using a layered structure, the circuit area can be reduced.

[0235] However, the structure of the device 200 may be as described above, and is not limited to this.

[0236] (Embodiment 5) In this embodiment, an example of the structure of the device 100 will be described with reference to Figures 10 to 17.

[0237] Figures 10(A) and 10(B) show external views of the apparatus 100. The apparatus 100 is, It has a circuit board 900 and a power storage unit 913. A label 910 is attached to the power storage unit 913. Furthermore, as shown in Figure 10(B), the device 100 has terminal 951 and terminal 95 It has 2 and, on the back of label 910, antenna 914 and antenna 915.

[0238] The circuit board 900 has terminal 911 and circuit 912. Terminal 911 is connected to terminal 951 It is connected to terminal 952, antenna 914, antenna 915, and circuit 912. Multiple terminals 911 are provided, and each of the multiple terminals 911 is designated as a control signal input terminal and a power supply terminal. You could also do this.

[0239] Circuit 912 is, for example, the circuits 113, 115, 116, and 11 shown in Figure 2(A). 9, Circuit 121, Transistor 131, Transistor 132, Transistor 150, and It has a transistor 170. Circuit 912 is provided on the back surface of circuit board 900. Good. Note that antenna 914 corresponds to antenna 114, and antenna 915 is antenna This corresponds to 118. Note that antennas 914 and 915 are not limited to a coil shape. For example, it may be linear or plate-shaped. Also, planar antennas, aperture antennas, traveling wave antennas Antennas such as tenors, EH antennas, magnetic field antennas, and dielectric antennas may be used. Antenna 914 or antenna 915 may be a flat conductor. It can function as one of the conductors for electric field coupling. In other words, the capacitor has Antenna 914 or antenna 915 functions as one of the two conductors. This may also be done. This allows for the exchange of power not only through electromagnetic and magnetic fields, but also through electric fields. can.

[0240] The energy storage unit 913 corresponds to the energy storage unit 111 shown in Figure 2(A).

[0241] The line width of antenna 914 is preferably larger than the line width of antenna 915. Furthermore, the amount of power received can be increased by antenna 914.

[0242] The device 100 has a layer 916 between antennas 914 and 915 and the energy storage body 913. The layer 916 can, for example, prevent electromagnetic field shielding to the energy storage body 913. It has a function. For layer 916, for example, a magnetic material can be used. Layer 916 is shielded. It can also be used as a layer.

[0243] Note that the structure of the device 100 is not limited to that shown in Figure 10.

[0244] For example, as shown in Figures 11(A-1) and 11(A-2), Figures 10(A) and 10 (B) Of the energy storage body 913 shown, antennas may be provided on each of the opposing pair of surfaces. Figure 11(A-1) is an external view of the pair of surfaces as seen from one side, and Figure 11(A Figure 10(A) and Figure 10(A) are external views of the pair of surfaces as seen from the other side. The same parts as the device 100 shown in 10(B) are shown in Figures 10(A) and 10(B). The description of device 100 can be used as appropriate.

[0245] As shown in Figure 11(A-1), a layer 916 is sandwiched between one of the pair of surfaces of the energy storage body 913. An antenna 914 is provided, and as shown in Figure 11(A-2), the other of the pair of surfaces of the energy storage body 913 An antenna 915 is provided with a layer 917 in between. The layer 917 is, for example, opposite the energy storage body 913. It has the function of preventing the shielding of electromagnetic fields. For example, layer 917 is magnetic A body can be used. Layer 917 may be used as a shielding layer.

[0246] By adopting the above structure, the size of both antenna 914 and antenna 915 can be increased. It is possible.

[0247] Alternatively, as shown in Figures 11(B-1) and 11(B-2), Figures 10(A) and 10( Even if, of the energy storage body 913 shown in B), separate antennas are provided on each of the opposing pair of surfaces, Good. Figure 11(B-1) is an external view of the pair of surfaces as seen from one side, and Figure 11( B-2) is an external view of the pair of surfaces as seen from the other side. Note that Figure 10(A) and For the same parts as the apparatus 100 shown in Figure 10(B), see Figures 10(A) and 10(B). The description of the device 100 shown can be used as appropriate.

[0248] As shown in Figure 11(B-1), a layer 916 is sandwiched between one of the pair of surfaces of the energy storage body 913. Tena 914 and antenna 915 are provided, and as shown in Figure 11(B-2), the energy storage body 91 An antenna 918 is provided on the other side of the pair of surfaces of 3, with layer 917 in between. Antenna 918 is For example, it has the function to perform data communication with external devices. Antenna 918 This involves applying an antenna with a shape applicable to, for example, antenna 914 and antenna 915. This is possible. The communication method between device 100 and other devices via antenna 918 is NF Apply a response method, such as C, that can be used between device 100 and device 200. It is possible.

[0249] Alternatively, as shown in Figure 12(A), the energy storage body 913 shown in Figures 10(A) and 10(B) A display device 920 may be provided. The display device 920 receives power from terminal 911 via terminal 919. They are electrically connected. Note that a label 910 is not provided in the area where the display device 920 is provided. This is also acceptable. Furthermore, for the same parts as the apparatus 100 shown in Figures 10(A) and 10(B), The explanation of the apparatus 100 shown in Figures 10(A) and 10(B) can be appropriately referenced.

[0250] The display device 920 displays, for example, an image indicating whether or not it is charging, an image indicating the amount of stored power, etc. It may be shown. The display device 920 may be, for example, electronic paper, liquid crystal display device, or electronic A luminescent (also known as EL) display device can be used. For example, an electronic paper By using this method, the power consumption of the display device 920 can be reduced.

[0251] Alternatively, as shown in Figure 12(B), the energy storage unit 913 shown in Figures 10(A) and 10(B) A sensor 921 may be provided. The sensor 921 provides electrical signals to terminal 911 via terminal 922. It is connected to the following. Note that the sensor 921 may be located on the back of the label 910. For the same parts as the apparatus 100 shown in Figures 10(A) and 10(B), see Figure 10(A) and The explanation of the apparatus 100 shown in Figure 10(B) can be appropriately referenced.

[0252] For example, the sensor 921 can be a sensor applicable to sensor 235. Therefore, sensor 921 may be used as sensor 235. For example, this detects data (such as temperature) that indicates the environment in which the device 100 is placed, and then... It can also be stored in the memory within path 912.

[0253] Furthermore, an example of the structure of the energy storage unit 913 will be explained using Figures 13 and 14.

[0254] The energy storage unit 913 shown in Figure 13(A) has terminals 951 and 952 inside the housing 930. It has a wound body 950. The wound body 950 is impregnated with an electrolyte inside the housing 930. Terminal 952 is in contact with the housing 930, and terminal 951 is in contact with the housing by using an insulating material or the like. It is not in contact with 930. Note that in Figure 13(A), for convenience, the housing 930 is separated and shown in the figure. Although it is shown, in reality the wound body 950 is covered by the housing 930, and terminals 951 and 952 It extends outside the casing 930. The casing 930 is made of a metal material (for example, aluminum). (etc.) or resin materials can be used.

[0255] Furthermore, as shown in Figure 13(B), the housing 930 shown in Figure 13(A) is made of multiple materials. They may be formed as follows. For example, the energy storage body 913 shown in Figure 13(B) consists of a housing 930a and a housing 93 0b is bonded together, and the area enclosed by housing 930a and housing 930b is wound up 95 A value of 0 is provided.

[0256] For the casing 930a, insulating materials such as organic resin can be used. In particular, the antenna By using a material such as organic resin on the surface where the electric field is formed, the electric field relative to the energy storage body 913 Shielding can be suppressed. Furthermore, if the shielding of the electric field by the housing 930a is small, the inside of the housing 930 Antennas such as antenna 914 and antenna 915 may be provided in the section. For example, metal materials can be used.

[0257] Furthermore, the structure of the wound body 950 is shown in Figure 14. The wound body 950 consists of a negative electrode 931 and a positive electrode. It has poles 932 and separators 933. The coiled body 950 sandwiches the separators 933. The negative electrode 931 and the positive electrode 932 are stacked on top of each other, and the stacked sheet is wound up to form a wound body. That is the case.

[0258] The negative electrode 931 is connected to terminal 911 shown in Figure 10 via either terminal 951 or terminal 952. The positive terminal 932 is connected to terminal 91 shown in Figure 10 via terminal 951 and the other terminal 952. It connects to 1.

[0259] Furthermore, each component will be explained.

[0260] An example of the negative electrode 931 will be explained with reference to Figure 15.

[0261] As shown in Figure 15(A), the negative electrode 931 is connected to the negative electrode current collector 961 and both sides of the negative electrode current collector 961 A negative electrode active material layer 962 provided on one or both sides (the figure shows the case of both sides) .

[0262] The negative electrode current collector 961 is conductive and does not form alloys with carrier ions such as lithium. It is made of high-performance materials. For example, stainless steel, iron, copper, nickel, or titanium. It can be used. Also, the negative electrode current collector 961 can be foil-shaped, plate-shaped (sheet-shaped), mesh-shaped, pan Shapes such as tinned metal or expanded metal can be used as appropriate. Negative electrode current collector For 961, it is best to use material with a thickness of 10 μm to 30 μm.

[0263] The negative electrode active material layer 962 is provided on one or both sides of the negative electrode current collector 961. As for 62, in addition to lithium metal, graphite, a carbon material commonly used in the energy storage field, can be used. Yes, it is possible. Graphite is made from low-crystalline carbon, such as soft carbon and hard carbon, and highly crystalline carbon. Natural graphite, quiche graphite, pyrolysis carbon, liquid crystal pitch carbon fiber, mesocarbon Chlorobeads (MCMB), liquid crystal pitch, petroleum or coal-based coke, etc., can be used. ru.

[0264] In addition to the materials mentioned above, the negative electrode active material undergoes charging and discharging through alloying and dealloying reactions with carrier ions. A reaction-capable alloy material can be used. When ON, alloy materials include, for example, Mg, Ca, Al, Si, Ge, Sn, At least one of the following: Pb, As, Sb, Bi, Ag, Au, Zn, Cd, Hg, and In Materials containing one of these ingredients can be used.

[0265] Furthermore, the surface of the negative electrode active material may be coated with an oxide film such as metal or silicon. By coating the surface of the active material with the above oxide film, a solid electrolyte interface (Solid El) is formed. It can suppress the formation of an ectrolyte interphase film and reduce irreversible capacity. This can suppress the occurrence of [unclear].

[0266] In this embodiment, a conductive additive and a binder are added to the above material, mixed, and fired. The fabricated negative electrode active material layer 962 is used.

[0267] The negative electrode active material layer 962 will be explained using Figure 15(B). Figure 15(B) shows the negative electrode active material layer 9 This is a cross-section of a portion of 62. The negative electrode active material layer 962 consists of the above electrode material and a conductive additive 97 It has 4 and a binder (not shown).

[0268] The conductive additive 974 is used between the granular negative electrode active material 973 and between the granular negative electrode active material 973 and the negative electrode current collector 9 It has the function of improving conductivity with 61. For example, a conductive additive 97 in the negative electrode active material layer 962 It is preferable to add 4. As the conductive additive 974, a material with a large specific surface area is desirable. Acetylene black (AB) and other materials can be applied. In addition, carbon nanotubes and granular material can be used. Carbon materials such as fen and fullerene may be used as conductive additive 974. The use of graphene as an example will be discussed later.

[0269] Furthermore, the binder can be anything that binds the negative electrode active material, conductive additive, and current collector together. Examples of ions include polyvinylidene fluoride (pVdF), vinylidene fluoride-hexyl Safluoropropylene copolymer, vinylidene fluoride-tetrafluoroethylene copolymer Combination, styrene-butadiene copolymer rubber, polytetrafluoroethylene, polypropylene Resin materials such as polyethylene and polyimide can be used.

[0270] The negative electrode 931 is fabricated as follows. First, the electrode material is prepared by using polyvinylidene fluoride and other materials. Mix vinylidene polymers, etc., with a solvent such as NMP (N-methylpyrrolidone). , forming a slurry.

[0271] Next, the slurry is applied to one or both sides of the negative electrode current collector 961 and dried. When the process is performed on both sides of the negative electrode current collector 961, the negative electrode active material layer is applied to both sides simultaneously or one side at a time. Forming 962. After this, rolling is performed using a roll press to manufacture the negative electrode 931. ru.

[0272] Next, we will discuss an example in which graphene is used as a conductive additive to the negative electrode active material layer 962, as shown in Figure 1. This will be explained with reference to Figures 15(C) and 15(D).

[0273] In this specification, graphene refers to a single layer of graphene, or two to 100 layers of graphene. It contains multilayer graphene. Monolayer graphene is a single layer of carbon atoms with π bonds. It refers to a sheet of molecules. Furthermore, graphene oxide is the oxidized form of the above-mentioned graphene. It refers to a compound. Furthermore, when reducing graphene oxide to form graphene, the oxide... Not all of the oxygen contained in graphene is removed; some of the oxygen remains in the graphene. If the fen contains oxygen, the oxygen content is XPS (X-ray Photoelec When measured using tron ​​spectroscopy, the entire graphene was 2 atoms. c% to 20 atomic% preferably 3 atomic% to 15 atomic% The following applies:

[0274] Figure 15(C) is a plan view of a portion of the negative electrode active material layer 962 using graphene. The negative electrode active material layer 962 consists of granular negative electrode active material 973 and multiple granular negative electrode active material 973 covering each other. Furthermore, it is composed of graphene 975 with granular negative electrode active material 973 packed inside. Binders not shown in the diagram may be added, but graphene 975 may not bond to each other. If it is contained in such a way that it functions sufficiently as a binder when applied, it does not necessarily mean that it is a binder. It is not necessary to add nitride. The negative electrode active material layer 962 in plan view consists of multiple negative electrode active materials 973. The surface is covered with different graphene 975. In addition, in some parts, granular negative electrode active material 9 It is acceptable for 73 to be exposed.

[0275] Figure 15(D) is a cross-sectional view of a portion of the negative electrode active material layer 962 in Figure 15(C). Granular The negative electrode active material 973 and the negative electrode active material layer 962 are granular in plan view. The graphene 975 covering the graphene is shown. In the cross-sectional view, the graphene 975 is Observed in a linear pattern. The same graphene or multiple graphenes form multiple granular negative electrode active materials 9 Multiple granular negatives superimposed on 73, or by the same graphene or multiple graphenes It contains the highly active material 973. Furthermore, graphene 975 is in the form of a sac, and odor is contained within it. Furthermore, it may contain multiple granular negative electrode active materials. Also, graphene 975 is partially open There are discharge areas, and in these areas, granular negative electrode active material 973 may be exposed.

[0276] The thickness of the negative electrode active material layer 962 can be any desired thickness between 20 μm and 150 μm. It is preferable to select [this option].

[0277] Furthermore, lithium may be pre-doped into the negative electrode active material layer 962. Lithium pre-doping method Legally, even if a lithium layer is formed on the surface of the negative electrode active material layer 962 by sputtering, Good. Alternatively, by providing lithium foil on the surface of the negative electrode active material layer 962, the negative electrode active material layer 96 Lithium can be pre-doped into 2.

[0278] Furthermore, in the granular negative electrode active material 973, the volume expands due to the absorption of carrier ions. There is a reason for this. Due to charging and discharging, the negative electrode active material layer becomes brittle, and a part of the negative electrode active material layer When this collapses, the reliability of the energy storage device, including its cycle characteristics, decreases.

[0279] However, even if the volume of the negative electrode active material increases or decreases due to charging and discharging, the granular negative electrode active material 973 When the surrounding area is covered with graphene 975, graphene 975 helps to disperse the negative electrode active material and the negative electrode active It is possible to prevent the collapse of the material layer. In other words, graphene 975, with charging and discharging It has the function of maintaining the bonds between negative electrode active materials even when the volume of the negative electrode active material increases or decreases. Therefore, when forming the negative electrode active material layer 962, there is no need to use a binder, and a constant weight (constant body In the negative electrode active material layer 962 of the product, it is possible to increase the amount of negative electrode active material. Therefore This allows for an increase in charge / discharge capacity per unit electrode weight (electrode volume).

[0280] Furthermore, graphene 975 is conductive and comes into contact with a plurality of granular negative electrode active materials 973. Therefore, it also functions as a conductive additive. In other words, when forming the negative electrode active material layer 962, There is no need to use an electrolytic additive, and in a negative electrode active material layer 962 of a fixed weight (fixed volume), the negative electrode It is possible to increase the amount of active material. Therefore, the charge / discharge rate per electrode weight (electrode volume) The capacity can be increased.

[0281] Furthermore, graphene 975 provides efficient and sufficient electron conduction pathways to the negative electrode active material layer 962. This allows for the improvement of the conductivity of the negative electrode 931.

[0282] Furthermore, graphene 975 also functions as a negative electrode active material capable of intercalating and deintercalating carrier ions. Therefore, the charging capacity of the negative electrode 931 can be improved.

[0283] Furthermore, the above-mentioned graphene may be used as the positive electrode active material.

[0284] Next, the method for fabricating the negative electrode active material layer 962 shown in Figures 15(C) and 15(D) will be explained. do.

[0285] First, the electrode material and a dispersion containing graphene oxide are kneaded together to form a slurry.

[0286] Next, the slurry is applied to the negative electrode current collector 961. Then, vacuum drying is performed for a certain period of time. Then, the solvent is removed from the slurry coated onto the negative electrode current collector 961. After this, roll press The process involves rolling using a machine.

[0287] Subsequently, electrochemical reduction of graphene oxide using electrical energy, and heat treatment... Graphene 975 is produced by the thermal reduction of graphene oxide, particularly through electrochemical processes. When a reduction treatment is performed, the resulting graphene has more π bonds compared to graphene formed by heat treatment. Because the proportion of carbon atoms increases, highly conductive graphene 975 can be formed. By the above process, graphene is used as a conductive additive on one or both sides of the negative electrode current collector 961. A negative electrode active material layer 962 can be formed, and the negative electrode 931 can be manufactured.

[0288] Next, the positive electrode 932 will be explained with reference to Figure 16.

[0289] Figure 16(A) is a cross-sectional view of the positive electrode 932. The positive electrode 932 is located on the positive electrode current collector 981. A material layer 982 is formed.

[0290] The positive electrode current collector 981 can be made of stainless steel, gold, platinum, zinc, iron, copper, aluminum, titanium, etc. Metals, alloys thereof, and other highly conductive materials can be used. Also, silicon Elements such as silicon, titanium, neodymium, scandium, molybdenum, etc., which improve heat resistance, can be added and aluminum alloys with such elements added can be used. Also, it may be formed of a metal element that reacts with silicon to form a silicide . Examples of metal elements that react with silicon to form a silicide include zirconium, titanium, hafnium, vanadium, niobium, tantalum, chromium , molybdenum, tungsten, cobalt, nickel, etc. The positive electrode current collector 981 can be appropriately used in shapes such as foil, plate (sheet), net, punching metal, expanded metal, etc .

[0291] The positive electrode active material layer 982 may contain, in addition to the positive electrode active material, a conductive assistant and a binder .

[0292] <00018�9>Examples of the positive electrode active material of the positive electrode active material layer 982 include compounds such as LiFeO2, LiCoO2, LiNiO2 , LiMn2O4, V2O5, Cr2O5, MnO2, etc. as materials can be used

[0293] Alternatively, a lithium-containing composite phosphate (general formula LiMPO4 (M is one or more of Fe(II), Mn(II ), Co(II), Ni(II))) can be used. Representative examples of the general formula LiMP O4 include LiFePO4, LiNiPO4, LiCoPO4, LiMnP O4, LiFe a Ni b PO4, LiFe a Co b PO4, LiFe a Mn b PO4, L iNi a Co b PO4, LiNi aMn b PO4 (where a + b ≤ 1, 0 < a < 1, 0 < b <1), LiFe c Ni d Co e PO4, LiFe c Ni d Mn e PO4, LiNi c C o d Mn e PO4 (where c + d + e ≤ 1, 0 < c < 1, 0 < d < 1, 0 < e < 1), Li Fe f Ni g Co h Mn i PO4 (where f + g + h + i ≤ 1, 0 < f < 1, 0 < g < 1, 0 < h < 1, 0 < i < 1), etc., lithium compounds can be used as the active material

[0294] Or, a lithium-containing composite silicate such as the general formula Li (2-j) MSiO4 (M is one or more of Fe(II), Mn(II), Co(I I), Ni(II), 0 ≤ j ≤ 2), etc., can be used The representative examples of the general formula Li (2-j) MSiO4 include Li (2-j) FeSi O4, Li (2-j) NiSiO4, Li (2-j) CoSiO4, Li (2-j) Mn SiO4, Li (2-j) Fe k Ni l SiO4, Li (2-j) Fe k Co l SiO4 、Li (2-j) Fe k Mn l SiO4, Li (2-j) Ni k Co l SiO4, Li ( 2-j) Ni k Mn lSiO4 (where k + l is 1 or less, 0 < k < 1, 0 < l < 1), Li (2 -j) Fe m Ni n Co q SiO4, Li (2-j) Fe m Ni n Mn q SiO4, Li (2-j) Ni m Co n Mn q SiO4 (where m + n + q is 1 or less, 0 < m < 1, 0 < n < 1 , 0 < q < 1), Li (2-j) Fe r Ni s Co t Mn u SiO4 (where r + s + t + u is 1 or less, 0 < r < 1, 0 < s < 1, 0 < t < 1, 0 < u < 1), etc. can be used as materials .

[0295] In addition, when the carrier ion is an alkali metal ion other than lithium ion or an alkaline earth metal ion, as the positive electrode active material layer 982, in the above lithium compound and lithium-containing composite phosphate and lithium-containing composite silicate, instead of lithium, an alkali metal ( for example, sodium, potassium, etc.), an alkaline earth metal (for example, calcium, strontium ium, barium, beryllium, magnesium, etc.) can be used.

[0296] Also, the positive electrode active material layer 982 is not limited to being formed directly on the positive electrode current collector 981. Between the positive electrode current collector 981 and the positive electrode active material layer 982, an adhesion layer for the purpose of improving the adhesion between the positive electrode current collector 98 and the positive electrode active material layer 98 2, a flattening layer for relaxing the uneven shape of the surface of the positive electrode current collector 981, a heat dissipation layer for heat dissipation, the positive electrode current collector 981 or the positive electrode active material layer 982's response etc. Functional layers, such as stress-relieving layers, to alleviate forces may be formed using conductive materials such as metals. stomach.

[0297] Figure 16(B) is a plan view of the positive electrode active material layer 982. The cathode uses particulate positive electrode active material 983 capable of intercalation and deintercalation of rear ions. A graphene 9, in which multiple active materials 983 are covered and the positive electrode active material 983 is packed inside. This is an example containing 84. Different graphene 984 covers the surface of multiple positive electrode active materials 983. Furthermore, the positive electrode active material 983 may be exposed in some areas.

[0298] The particle size of the positive electrode active material 983 is preferably 20 nm or more and 100 nm or less. Since electrons move within 983, it is preferable that the particle size of the positive electrode active material 983 be smaller.

[0299] Furthermore, sufficient properties can be obtained even if the surface of the positive electrode active material 983 is not coated with a graphite layer. However, if a positive electrode active material coated with a graphite layer and graphene are used together, It is preferable because it allows for a smooth flow.

[0300] Figure 16(C) is a cross-sectional view of a portion of the positive electrode active material layer 982 in Figure 16(B). Positive electrode It has an active material 983 and graphene 984 covering the positive electrode active material 983. 84 is observed as a linear shape in the cross-sectional view. Multiple positive electrode active materials 983 are the same graph It is positioned so as to be sandwiched between one or more graphene 984s. The 984 is bag-shaped and may enclose multiple positive electrode active materials 983 inside. Furthermore, in some cases, the positive electrode active material may be exposed without being covered by graphene.

[0301] The thickness of the positive electrode active material layer 982 is selected from a desired thickness between 20 μm and 100 μm. Furthermore, to prevent cracks and delamination, the thickness of the positive electrode active material layer 982 is adjusted as appropriate. This is preferable.

[0302] Furthermore, the positive electrode active material layer 982 is acetylene in volume between 0.1 and 10 times the volume of graphene. Black particles and carbon particles such as carbon nanofibers with one-dimensional extension, It may contain a known conductive additive.

[0303] Furthermore, depending on the material of the positive electrode active material, the volume may expand due to the intercalation of carrier ions. There is a reason for this. Due to charging and discharging, the positive electrode active material layer becomes brittle, and a part of the positive electrode active material layer It collapses, and as a result the reliability of the energy storage device decreases. However, the positive electrode active material is full Even if the volume increases or decreases due to discharge, graphene surrounds the area, so graphene acts as the positive electrode active material. It is possible to prevent the dispersion of materials and the collapse of the positive electrode active material layer. In other words, graphene can prevent the dispersion of materials and the collapse of the positive electrode active material layer. It has the function of maintaining the bonding between positive electrode active materials even if the volume of the positive electrode active material increases or decreases accordingly. Therefore, the reliability of the energy storage system can be improved.

[0304] Furthermore, graphene 984 is in contact with multiple positive electrode active materials and also functions as a conductive additive. Furthermore, it has the function of holding a positive electrode active material that can intercept and deintercept carrier ions. Therefore, there is no need to mix a binder into the positive electrode active material layer, and the amount of positive electrode active material per positive electrode active material layer This makes it possible to increase the discharge capacity of the energy storage device.

[0305] Next, the manufacturing method for the positive electrode active material layer 982 will be described.

[0306] First, a slurry containing particulate positive electrode active material and graphene oxide is formed. Next, the positive electrode assembly After applying the slurry onto the electrolytic body 981, a reduction treatment is performed by heating in a reducing atmosphere. Then, the positive electrode active material is fired, and the oxygen contained in graphene oxide is removed, and the graphene It forms a nucleus. However, not all of the oxygen contained in graphene oxide is removed; some of the oxygen remains in the nucleus. It remains in graphene. Furthermore, the reduction treatment of graphene oxide is by heating as described above. Hereinafter referred to as thermal reduction.) This is not limited to reduction by chemical reactions using reducing agents such as hydrazine. (Hereinafter referred to as chemical reduction.) A potential is applied to the electrode in the electrolyte that reduces graphene oxide. In addition to thermal reduction, electrochemical reduction (hereinafter referred to as electrochemical reduction) and other reduction methods that differ from thermal reduction. This may be done further. Through the above steps, a positive electrode active material layer 982 is formed on the positive electrode current collector 981. This can be done. As a result, the conductivity of the positive electrode active material layer 982 is increased.

[0307] Because graphene oxide contains oxygen, it becomes negatively charged in polar solvents. As a result, graphene oxide The ferrites disperse amongst themselves in the polar solvent. Therefore, the positive electrode active material contained in the slurry aggregates. This makes it less likely for aggregation to occur, and the increase in particle size of the positive electrode active material due to aggregation can be reduced. This facilitates the movement of electrons within the electrode active material, thereby improving the conductivity of the positive electrode active material layer.

[0308] Furthermore, a carbon layer or the like may be formed on the surface of the positive electrode active material particles.

[0309] The separator 933 can be cellulose (paper) or polypropylene with voids. Insulators such as polyethylene can be used.

[0310] Furthermore, the negative electrode 931, positive electrode 932, and separator 933 are impregnated with electrolyte. As the electrolyte, a material containing carrier ions is used. Lithium is used as the carrier ion. When using LiClO4, LiAsF6, LiBF4, LiPF6, Li Lithium salts such as (C2F5SO2)2N can be used.

[0311] Furthermore, the carrier ions may include alkali metal ions other than lithium ions, or alkaline earth metal ions. In the case of group ions, as an electrolyte, instead of lithium in the above lithium salt, an alkali Metallic metals (e.g., sodium and potassium), alkaline earth metals (e.g., calcium, Strontium, barium, beryllium, magnesium, etc. may also be used.

[0312] Furthermore, a material capable of transporting carrier ions is used as the solvent for the electrolyte. As the medium, an aprotic organic solvent is preferred. Typical examples of aprotic organic solvents are ethylene carbonate (EC), propylene carbonate, dimethyl carbonate, di Ethyl carbonate (DEC), γ-butyrolactone, acetonitrile, dimethoxyethanol Examples include tetrahydrofuran, and one or more of these can be used.

[0313] Furthermore, by using a polymer material that gels as the solvent for the electrolyte, the risk of leakage is reduced. The integrity is enhanced. In addition, it is possible to make lithium-ion batteries thinner and lighter. Typical examples of polymer materials include silicone gels, acrylic gels, and acrylonitrile gels. Examples include polyethylene oxide, polypropylene oxide, and fluorinated polymers.

[0314] Furthermore, one ionic liquid (a room-temperature molten salt) that is flame-retardant and non-volatile is used as the solvent for the electrolyte. Alternatively, by using multiple batteries, internal temperature can be reduced due to internal short circuits or overcharging of the lithium-ion battery. Even if the temperature rises, it can prevent lithium-ion batteries from rupturing or catching fire.

[0315] In addition, instead of an electrolyte, a solid electrolyte containing inorganic materials such as sulfide-based or oxide-based materials, or P Solid electrolytes containing polymer materials such as EO (polyethylene oxide) can be used. When using a solid electrolyte, the installation of a separator becomes unnecessary. Also, the entire battery is solid. Because it can be integrated, the risk of leakage is eliminated, dramatically improving safety.

[0316] Note that the configuration of the energy storage unit 913 is not limited to the configuration shown in Figure 10. Example 913 will be explained with reference to Figure 17.

[0317] The laminated energy storage body 913 shown in Figure 17 consists of a positive electrode current collector 991 and a positive electrode active material layer 992 A positive electrode 993 having a separator 997, a negative electrode current collector 994 and a negative electrode active material layer 995 A battery is formed by stacking a negative electrode 996 having a negative electrode 996, sealing it in an outer casing 999, and injecting an electrolyte 998. Yes. In Figure 17, the energy storage body 913 consists of a sheet-like positive electrode 993 and a negative electrode 996. The structure is shown as a stacked arrangement, but in order to increase the battery capacity, the above stacked structure is wound up. Alternatively, it is preferable to stack multiple sheets together before sealing. In particular, the form of the lithium-ion battery When laminated, the battery is flexible, making it suitable for applications requiring flexibility. Suitable for the purpose.

[0318] In the laminated energy storage body 913 shown in Figure 17, the positive electrode current collector 991 and the negative electrode current collector 9 94 also serves as a terminal for obtaining electrical contact with the outside. Therefore, the positive electrode current collector 99 Part of the negative electrode current collector 994 is positioned to be exposed to the outside from the outer casing 999.

[0319] In the laminated energy storage body 913, the outer casing 999 is made of, for example, polyethylene, polypropylene On a film made of materials such as polypropylene, polycarbonate, ionomer, and polyamide, A highly flexible metal thin film such as aluminum, stainless steel, copper, or nickel is provided, and further, the metal An insulating synthetic resin such as polyamide resin or polyester resin is used as the outer surface of the outer casing on a thin film. A laminated film with a three-layer structure can be used. This prevents the permeation of electrolytes and gases, ensures insulation, and also provides electrolyte resistance. do.

[0320] Furthermore, the format is not limited to laminated types; for example, coin-shaped or rectangular shapes may also be used.

[0321] Furthermore, a lithium-ion capacitor may be used for the energy storage element 913.

[0322] Lithium-ion capacitors are electric double-layer capacitors (EDLCs). A lithium alloy capacitor (abbreviation for double layer capacitor) uses a carbon material as the positive electrode. This is a hybrid capacitor that combines the negative electrode of a ion battery, and the positive and negative electrodes are the energy storage sources. It is an asymmetric capacitor with a different principle. The positive electrode forms an electric double layer, and charging and discharging occur through physical action. In contrast to the anode, the anode charges and discharges through the chemical action of lithium. By using a negative electrode in which lithium has been pre-absorbed into a certain carbon material, activated carbon can be used in conventional negative electrodes. Compared to the electric double-layer capacitor used, the energy density has been dramatically improved.

[0323] In lithium-ion capacitors, lithium ions and anions are used instead of the positive electrode active material layer described above. A material capable of reversibly supporting at least one of these can be used. Examples of such materials include Examples include activated carbon, conductive polymers, and polyacene-based organic semiconductors (PAS). Examples include (abbreviation for Semiconductor).

[0324] Lithium-ion capacitors have high charge and discharge efficiency, enabling rapid charging and discharging, and are reusable. It also has a long lifespan due to use.

[0325] The above-mentioned negative electrode is used as the negative electrode of such a lithium-ion capacitor. This allows for initial failure This makes it possible to manufacture energy storage devices that suppress the generation of reversible capacity and improve cycle characteristics. Furthermore, it is possible to manufacture energy storage devices with excellent high-temperature characteristics.

[0326] (Embodiment 6) This embodiment will describe electrical equipment.

[0327] Here, electrical equipment refers to industrial products that include parts that operate using the power of electricity. This applies not only to consumer electronics and other consumer products, but also to a wide range of applications including commercial, industrial, and military use. To include in the category.

[0328] Electrical equipment to which the energy storage device according to one aspect of the present invention can be applied includes, for example, tele Display devices such as TVs and monitors, lighting devices, and personal computers such as desktop and notebook computers. Data, word processor, DVD (Digital Versatile Disc) Image playback device that plays back still images or videos stored on any recording medium, CD (Compact) Portable or stationary audio playback devices such as disc players and digital audio players. Equipment, portable or stationary radio receivers, tape recorders and IC recorders (voice recorders) Recording and playback devices such as headphones, stereos, stereos, remote controllers, and storage devices. Clocks such as meters and wall clocks, cordless phone handsets, transceivers, mobile phones, car phones Portable or stationary game consoles, pedometers, calculators, personal digital assistants, electronic organizers, e-books, electronic devices Voice input devices such as child translation devices and microphones, photographic equipment such as still cameras and video cameras, Toys, electric shavers, electric toothbrushes, high-frequency heating devices such as microwave ovens, electric rice cookers, electric Washing machine, vacuum cleaner, water heater, fan, hair dryer, humidifier, dehumidifier, air conditioner Air conditioning equipment such as N, dishwashers, dish dryers, clothes dryers, futon dryers, electric refrigerators, Electric freezers, electric refrigerators / freezers, DNA storage freezers, flashlights, power tools, smoke detectors, and other accessories. Hearing devices, cardiac pacemakers, portable X-ray machines, radiation detectors, electric massagers, and dialysis equipment. Examples include health equipment and medical devices. Furthermore, emergency lights, traffic lights, gas meters, and Measuring instruments such as water meters, belt conveyors, elevators, escalators, vending machines, automatic Ticket vending machines, ATMs (CDs, abbreviation for Cash Dispenser), and ATMs ATM (Automated Teller Machine), Digital Signage (electronic billboards), industrial robots, wireless relay stations, mobile phone base stations, power storage systems Examples include power systems, power leveling systems, and industrial equipment such as secondary batteries for smart grids. Furthermore, mobile vehicles (transport vehicles) that are propelled by electric motors using electricity from secondary batteries are also electric. It shall be included in the category of equipment. Examples of the above-mentioned mobile devices include electric vehicles (EVs), Hybrid vehicles (HEVs) and plug-in hybrid vehicles (P HEVs, tracked vehicles that replace these tire wheels with tracks, agricultural machinery, electric assist vehicles Motorized bicycles including bicycles, motorcycles, electric wheelchairs, electric carts, small or large vessels, Submarines, aircraft such as fixed-wing and rotary-wing aircraft, rockets, artificial satellites, space probes and planetary probes Examples include spacecraft.

[0329] Furthermore, the above electrical equipment is used as a main power source to supply almost all of the power consumption, according to one embodiment of the present invention. A power storage device related to the above can be used. Furthermore, the above electrical equipment can be powered by the main power supply or commercial power supply. An uninterruptible power supply (UPS) that can supply power to electrical equipment in the event of a power outage. Thus, an energy storage device according to one aspect of the present invention can be used. Alternatively, the above-mentioned electrical equipment In parallel with the supply of power to electrical equipment from the main power supply or commercial power supply, the supply of power to electrical equipment A power storage device according to one aspect of the present invention can be used as an auxiliary power source for performing this task.

[0330] As an example, mobile devices are shown in Figures 18(A) and 18(B). Figure A) is a view of the mobile device from the front, and Figure 18(B) is a view from the back.

[0331] The mobile terminal 1100 shown in Figures 18(A) and 18(B) consists of a housing 1111 and a display unit 11 It comprises 12, a power storage device 1113, and a power switch 1114.

[0332] The display unit 1112 can be partially designated as a touch panel area, and the displayed operation keys can be accessed. Data can be entered by touching it. The entire area of ​​the display unit 1112 is a touch panel. It may also be configured to have the function of a .

[0333] The display unit 1112 can, for example, use an electroluminescent (also called EL) display module. A liquid crystal display module can be used.

[0334] The energy storage device 1113 is a cassette-type battery. The energy storage device 1113 has terminal 112 It has 1. The number of terminals 1121 is not particularly limited. The energy storage device 1113 is housed in the casing 11 By fitting into the recess 11, terminal 1121 is connected to terminal 112 provided on housing 1111. Connect to 2. This supplies power from the energy storage device 1113 to the circuit inside the housing 1111. Yes, it is possible. Note that the power storage device 1113 after being fitted into the recess of the housing 1111 is shown. 3 may be exposed. Also, a cover may be provided on top of the energy storage device 1113. The device 1113 is designed to be detachable from the mobile terminal 1100, but in the embodiment of the present invention One aspect of the state is not limited to this. The user of the mobile terminal 1100 uses the energy storage device 1113 It may be designed so that it cannot be removed. The energy storage device 1113 is located in the housing 1111. By fitting it into the recess, the degree of freedom in arranging the internal components of the mobile terminal 1100 is increased, The terminal 1100 can be made smaller and thinner. In such cases, the energy storage device 111 It is possible to exchange power and other information while keeping device 3 inside the mobile terminal 1100. Even if the power storage device 1113 can be removed from the mobile terminal 1100, Even if the device 1113 remains inside the mobile terminal 1100, power and other information can still be exchanged. stomach.

[0335] The mobile devices shown in Figures 18(A) and 18(B) can display various types of information (still images, videos, text). Functions to display images, etc., a calendar, a function to display the date or time on the display unit, A touch input function that allows you to operate or edit the information displayed on the screen, and various software It can have functions such as processing control by a program.

[0336] Figure 19 is a block diagram of an example of a mobile device. The mobile device shown in Figure 19 is, for example, a mobile device. Line communication circuit 1131, analog baseband circuit 1132, digital baseband circuit 1 133, Energy storage device 1134, Power supply circuit 1135, Application processor 1136, Display controller 1141, memory 1142, display 1143, touch sensor A sensor 1149, an audio circuit (speaker and microphone, etc.) 1147, and one of the input means It consists of keyboards such as 1148.

[0337] The energy storage device 1134 corresponds to the energy storage device 1113 shown in Figure 18, and the other components are as follows: It corresponds to a load.

[0338] The wireless communication circuit 1131 has the function of receiving radio waves containing data, for example. For example, an antenna could be used as part of route 1131.

[0339] By providing the touch sensor 1149, the display unit 114 on the display 1143 You can operate 4.

[0340] The display 1143 consists of a display unit 1144, a source driver 1145, and a gate driver. It is composed of a 1146. The display unit 1144 consists of a source driver 1145 and a gate The operation is controlled by driver 1146.

[0341] Application processor 1136 is a CPU 1137, a digital signal processor It is equipped with an interface (also called an IF) 1138 (also known as a DSP).

[0342] Furthermore, the memory 1142 is usually composed of SRAM or DRAM, as shown in Figure 8, for example. By using memory, the cost per bit of memory can be reduced, and also, The power consumption of memory 1142 can be reduced.

[0343] Furthermore, we will explain an example of the operation of the mobile device shown in Figure 19.

[0344] First, the image is formed by receiving radio waves containing data or by the application processor 1136. The data stored in memory 1142 is transferred to the display controller 114 The image input by the display 1143 is output via 1 to display 1143. Display an image based on the data. If there are no changes to the image, it will normally be 60 to 130H. Data is read from memory 1142 at a period of z or less, and the read data is stored on the disk. The data continues to be sent to the play controller 1141. The user has performed an action to refresh the screen. Then, the application processor 1136 forms a new image, and that image is memo The data is stored in memory 1142. During this time, the image data is periodically read from memory 1142. Once the new image data has finished being stored in the Mori 1142, the next information on the display 1143 is displayed. During the frame period, the data stored in memory 1142 is read, and the read data The data is output to the display 1143 via the display controller 1141. The display 1143, upon receiving data, displays an image corresponding to the input image data. The above reading operation continues until the next data is stored in memory 1142. In this way, by writing and reading data to memory 1142, the disk The display operation is performed by play 1143.

[0345] Figures 20(A) and 20(B) show examples of power tools.

[0346] The power tool shown in Figure 20(A) consists of a housing 1211, a tip tool 1212, and a trigger switch. It comprises a 1214, a power storage device 1216, and a detachable control switch 1217. The power tool shown in 20(A) may be an electric drill. Alternatively, the power tool shown in Figure 20(A) may be an electric drill. You may also use an electric screwdriver as a tool.

[0347] The housing 1211 has a handle portion 1215.

[0348] The cutting tool 1212 can be, for example, a drill, a Phillips bit, or a slotted bit. It can be used. Furthermore, the tip tool 1212 is detachable, and depending on the application, it can be used as a drill or plastic. You may use a subbit or a negative bit as appropriate.

[0349] In the power tool shown in Figure 20(A), the power switch is turned ON, and the handle portion 1215 is turned ON. By gripping and turning on the trigger switch 1214, the tip tool 1212 is activated. It can be made to happen.

[0350] The energy storage device 1216 can be attached and detached by toggling the attachment / detachment control switch 1217. The energy storage device 1216 has terminals similar to the portable terminal shown in Figure 18, and the energy storage device 1216 By connecting the terminals to the terminals provided on the housing 1211, the energy storage device 1216 can be connected to the housing It can supply power to body 1211.

[0351] The power tool shown in Figure 20(B) consists of a housing 1221, a blade 1222, and a trigger switch. It comprises a 1224, a power storage device 1226, and a detachable control switch 1227. The power tool shown in 20(B) may also be an electric cutter.

[0352] The housing 1221 has a handle portion 1225.

[0353] In the power tool shown in Figure 20(B), the handle portion 1225 is gripped, and the trigger switch 122 By turning on 4, the blade 1222 is rotated to perform cutting and other operations. It is possible.

[0354] The energy storage device 1226 can be attached and detached by toggling the attachment / detachment control switch 1227. The energy storage device 1226 has terminals similar to the portable terminal shown in Figure 18, and the energy storage device 1226 By connecting the terminals to the terminals provided on the housing 1221, the energy storage device 1226 can be connected to the housing It can supply power to body 1221.

[0355] Furthermore, an example of charging the above-mentioned electrical equipment will be explained using Figure 21.

[0356] Figure 21(A) shows an example in which the mobile terminal 1100 shown in Figure 18 is superimposed on the power supply device 1300. It is showing.

[0357] Figure 21(B) is a view of the mobile device from the bottom. For example, in the case of electromagnetic induction, As shown in 21(B), the antenna 1311 provided on the mobile terminal 1100 and the power supply device By electromagnetically coupling the antenna 1312 provided at 1300, a power transmission transformer is formed. This allows power to be supplied to the mobile terminal 1100.

[0358] In Figures 21(A) and 21(B), the mobile terminal 1100 is superimposed on the power supply device 1300. An example is shown, but as shown in Figure 22, the mobile terminal 1100 is connected to the power storage device 1113 Alternatively, the storage device 1113 may be removed and superimposed on the power supply device 1300.

[0359] The configuration of the power supply device 1300 is not particularly limited. For example, the position of the mobile terminal 1100 The system detects this and moves the antenna 1312 to superimpose it onto the mobile terminal 1100, thereby enabling charging. This is done using a moving coil type, or by providing multiple antennas 1312 and superimposing them on the mobile terminal 1100. A multi-coil system or the like, which uses antenna 1312 for charging, may also be applied.

[0360] The electrical equipment that can be charged by the power supply device 1300 is not limited to those described above.

[0361] Figure 23 shows the specific configuration of the above electrical equipment. In Figure 23, from the power supply device 1450 The display device 1400, which can supply power, is a power storage device 14 according to one aspect of the present invention. This is an example of an electrical device using 04. Specifically, the display device 1400 is for TV broadcast reception. This corresponds to a display device, consisting of a housing 1401, a display unit 1402, a speaker unit 1403, and a power storage device 14 It has 04, etc. An energy storage device 1404 according to one aspect of the present invention is provided inside the housing 1401. The display device 1400 can receive power from the commercial power supply, and also store The power stored in the electrical device 1404 can also be used. Therefore, in the event of a power outage, etc., the commercial power Even when power cannot be supplied from the power source, the energy storage device 1404 according to one aspect of the present invention can be used without interruption. By using it as a power source, the display device 1400 can be used.

[0362] The display unit 1402 has light-emitting elements such as liquid crystal display devices and organic EL elements in each pixel. Equipment, electrophoresis display device, DMD (Digital Micromirror Display) ce), PDP (Plasma Display Panel), FED (Field Semiconductor display devices such as Emission Displays can be used.

[0363] In addition to being used for receiving TV broadcasts, display devices are also used for personal computers, advertising displays, and more. This includes all information display devices.

[0364] Figure 23 shows a fixed-type lighting fixture that can receive power from the power supply device 1450. Device 1410 is an example of an electrical device using a power storage device 1413 according to one aspect of the present invention. Specifically, the lighting device 1410 consists of a housing 1411, a light source 1412, a power storage device 1413, etc. It has. Power is supplied to the energy storage device 1413 from the power supply device 1450. In Figure 23, The energy storage device 1413 is located within the ceiling 1414 on which the housing 1411 and light source 1412 are installed. Although the example shows the case where it is located in the section, the energy storage device 1413 is located inside the housing 1411. It may be provided. The lighting device 1410 can also receive power from the commercial power supply. In addition, the power stored in the energy storage device 1413 can also be used. Therefore, in the event of a power outage, Even when power cannot be supplied from the commercial power source, the energy storage device 14 according to one aspect of the present invention By using 13 as an uninterruptible power supply, the lighting device 1410 can be used.

[0365] Figure 23 illustrates a fixed lighting device 1410 installed on the ceiling 1414. However, the energy storage device according to one aspect of the present invention has a ceiling 1414, for example, a side wall 1415, a floor 1 416, It can also be used in fixed lighting devices installed in windows 1417, etc., and on a tabletop It can also be used in lighting fixtures and other similar devices.

[0366] Furthermore, the light source 1412 can be an artificial light source that uses electricity to artificially produce light. Specifically, this includes incandescent light bulbs, discharge lamps such as fluorescent lamps, and light-emitting elements such as LEDs and organic EL elements. The element is an example of the artificial light source mentioned above.

[0367] In Figure 23, the indoor unit 1420 and can receive power from the power supply device 1450. An air conditioner having an outdoor unit 1424 is an energy storage device 142 according to one aspect of the present invention. This is an example of an electrical device using 3. Specifically, the indoor unit 1420 has a housing 1421 and an air outlet. It has 1422, an energy storage device 1423, etc. In Figure 23, the energy storage device 1423 is located in the indoor unit 14 Although the example shows the case where it is installed in 20, the energy storage device 1423 is installed in the outdoor unit 1424. It is also acceptable if both the indoor unit 1420 and the outdoor unit 1424 have a power storage device 14 23 may also be provided. The air conditioner receives power from the commercial power supply. It is also possible to use the power stored in the energy storage device 1423. In particular, indoor If both the unit 1420 and the outdoor unit 1424 are equipped with a power storage device 1423, then in the event of a power outage, Therefore, even when power cannot be supplied from the commercial power source, the energy storage device 1 according to one aspect of the present invention By using the 423 as an uninterruptible power supply, it becomes possible to use the air conditioner.

[0368] Figure 23 shows an example of a split-type air conditioner consisting of an indoor unit and an outdoor unit. As shown, an integrated air conditioner unit has both the indoor and outdoor unit functions in a single housing. A power storage device according to one aspect of the present invention can also be used as the facilitator.

[0369] In Figure 23, an electric refrigerator 1 can receive power from the power supply device 1450. Reference numeral 430 denotes an example of an electrical device using a power storage device 1434 according to one aspect of the present invention. Specifically, the electric refrigerator-freezer 1430 consists of a casing 1431, a refrigerator door 1432, and a freezer door 14 33. It has an energy storage device 1434, etc. In Figure 23, the energy storage device 1434 is located in the housing 1431. It is located inside. The electric refrigerator-freezer 1430 receives power from the commercial power supply. It is also possible to use the power stored in the energy storage device 1434. Therefore, power outage Even when power cannot be supplied from the commercial power source due to the above, the energy storage device according to one aspect of the present invention By using unit 1434 as an uninterruptible power supply, the electric refrigerator / freezer 1430 can be used. ru.

[0370] In Figure 23, the clock 1440, which can receive power from the power supply device 1450, This is an example of an electrical device using a power storage device 1441 according to one aspect of the present invention.

[0371] Of the electrical appliances mentioned above, high-frequency heating devices such as microwave ovens and electric rice cookers are included. The equipment requires high power in a short period of time. Therefore, it needs to supplement the power that cannot be supplied by the commercial power supply. As an auxiliary power source for this purpose, by using the energy storage device according to one aspect of the present invention, the electrical equipment This prevents the commercial power circuit breaker from tripping during use.

[0372] Furthermore, during periods when electrical equipment is not in use, especially the total amount of electricity that the commercial power supplier can supply... During periods when the proportion of electricity actually used (called the electricity usage rate) is low, energy storage is used. By storing power in the device, the increase in power usage outside of the above-mentioned time period is suppressed. This is possible. For example, in the case of an electric refrigerator-freezer 1430, when the temperature is low, the refrigerator door 143 2. At night when the freezer door 1433 is not opened or closed, power is stored in the energy storage device 1434. And as the temperature rises, the refrigerator door 1432 and the freezer door 1433 are opened and closed. During the daytime, by using the energy storage device 1434 as an auxiliary power source, the daytime power usage rate It can be kept low.

[0373] Furthermore, an example of a mobile device, which is an example of an electrical device, will be explained with reference to Figure 24.

[0374] The energy storage device described in the previous embodiment can be used as a control energy storage device. The energy storage device can be charged by external power supply via plug-in technology or contactless power transfer. This is possible. Furthermore, if the moving object is a railway electric vehicle, power is supplied from overhead lines or conductive rails. It can be recharged.

[0375] Figures 24(A) and 24(B) show that power can be supplied from the power supply device 1590. An example of an electric vehicle is shown. The electric vehicle 1580 is equipped with an energy storage device according to one aspect of the present invention. The power storage device 1581 is installed. Power is supplied to the power storage device 1581 from the power supply device 1590. The power from the energy storage device 1581 is then adjusted by the control circuit 1582 to power the drive unit. It is supplied to 1583. The control circuit 1582 has ROM, RAM, CPU, etc. (not shown). It is controlled by the processing unit 1584.

[0376] The drive unit 1583 consists of a DC motor or an AC motor alone, or a motor and an internal combustion engine. It is composed of a combination of components. The processing unit 1584 receives the driver's operation information of the electric vehicle 1580. (Acceleration, deceleration, stopping, etc.) and driving information (information such as uphill and downhill slopes, and the load on the drive wheels) Based on input information (such as cargo information), a control signal is output to the control circuit 1582. Control circuit 1 582 controls the electrical energy supplied from the energy storage device 1581 by the control signal of the processing device 1584. The energy is adjusted to control the output of the drive unit 1583. (When an AC motor is installed) Although not shown in the diagram, it also incorporates an inverter that converts direct current to alternating current.

[0377] The energy storage device 1581 can be charged by power supplied from the power supply device 1590. Electricity is converted to a constant DC voltage with a fixed voltage value via a conversion device such as an AC / DC converter. This can be done by conversion. As the energy storage device 1581, an energy storage device according to one aspect of the present invention By incorporating this technology, it can contribute to increasing battery capacity and improve convenience. can.

[0378] As an example of the power supply device described using Figures 20 to 24, see the device shown in Embodiment 1, for example, Device 2 00 can be applied.

[0379] As an example of the energy storage device described using Figures 20 to 24, see the device shown in Embodiment 1. 00 can be applied.

[0380] Furthermore, one power supply unit 1450 can also supply power to multiple energy storage devices. For example, power supply Device 1450 transmits an acknowledgment signal to each electrical device using a wireless signal, and the electrical device The response signals allow power to be supplied to each electrical device in sequence. The energy storage device has a collision avoidance function (anti-collision function) and receives power from the power supply device 1450. Each energy storage device may be configured to respond to the radio waves at different timings. For example, if each energy storage device has different identification data, the response will be based on the identification data. Because you can select which energy storage device to use, each energy storage device will respond at a different time. Therefore, for example, if the power supply device 1450 has multiple oscillation circuits, each By controlling the vibration circuit, it is also possible to sequentially supply power to multiple energy storage devices. It can also supply power to each energy storage device simultaneously.

[0381] As described above, one aspect of the present invention, the energy storage device, can be applied to various electrical devices. [Examples]

[0382] In this embodiment, an example of an energy storage device will be described.

[0383] The energy storage device according to this embodiment is a coin-type energy storage device.

[0384] In the fabrication of the cathode, LiFePO4 particles with a carbon layer formed on the surface and NMP(N-methyl- Pyrrolidone was mixed and stirred in a kneader at 2000 rpm for 3 minutes.

[0385] Next, ultrasonic vibration is applied for 3 minutes, and then the mixture is stirred and mixed in a kneader at 2000 rpm for 1 minute. The process was repeated five times.

[0386] Next, graphene oxide is added to the mixture and stirred in a kneader at 2000 rpm for 2 minutes. • The mixture was mixed eight times.

[0387] Subsequently, pVdF (manufactured by Kureha Chemical Co., Ltd.) is added as a binder and mixed in a kneader at 2000 rp. A 2-minute stirring and mixing cycle was performed once at m.

[0388] Furthermore, the process of adding NMP and stirring / mixing at 2000 rpm for 2 minutes is performed on the sample. The process was repeated until the viscosity was suitable for the work.

[0389] Furthermore, the blending ratio of LiFePO4 particles with a carbon layer formed, graphene oxide, and pVdF is set to 9. The ratio was set to 1.4:0.6:8 (unit: wt%).

[0390] The slurry was formed by the above process. Furthermore, the slurry was coated using a coating device (applicator). The coating was applied to a 20 μm thick aluminum foil using [a specific method / tool]. At this time, the coating part of the coating apparatus and the coating [another specific method / tool] were used. The distance from the work surface was set to 230 μm, and the coating speed was set to 10 mm / sec.

[0391] After drying the above sample with hot air at 80°C for 40 minutes, it was pressed using a roll press. Furthermore, it was heated at 170°C for 10 hours under reduced pressure, and then pressed again to obtain... The positive electrode was fabricated by punching out a portion of the electrode. Note that the temperature of the press machine's rolls was also considered. Pressing was performed at 120°C, under conditions that reduced the thickness of the positive electrode by 20%. The thickness of the material layer is 58 μm, and the electrode density is 1.82 g / cm³. 3 LiFeP The amount of O4 present is approximately 9.7 mg / cm³. 2 Therefore, the unipolar theoretical capacity is approximately 1.6 mAh / cm². 2 in be.

[0392] The LiFePO4 particles with a carbon layer formed on the surface described above are materials fabricated using a solid-phase method. In the preparation of LiFePO4 particles with a carbon layer formed on the surface, a dry room environment (dry) is used. At temperatures between -55°C and -70°C, Li2CO3:FeC2O4·2H2O is used as a raw material. The raw materials were weighed to achieve a molar ratio of NH4H2PO4 = 2:1:1.

[0393] Next, these were mixed and ground using a ball mill. A ball mill is a planetary rotating ball mill. It is a mill, a 500ml zirconia pot, and a 300g zirconia bowl with a diameter of 3mm. Using a tumbler, the above raw materials totaling 150g were processed at a rotation speed of 300rpm for 2 hours. Mixing... For grinding, use 250 ml of acetone (manufactured by Kanto Chemical Co., Ltd., 0.0 ml of the total amount) as a solvent. (Containing 0.68% water) was used.

[0394] Next, in a dry room environment, use a hot plate and heat at 50°C for at least 1 hour. The following drying process was carried out.

[0395] Subsequently, under the dry room environment described above, a vacuum dryer is used to dry the material in a 0.1 MPa vacuum at 80°C. Then, it was dried for 2 hours.

[0396] Next, firing was performed at 350°C for 10 hours using a muffle furnace. At this time, the N2 flow rate was: It's 5 liters per minute.

[0397] Next, 10 wt% glucose is weighed onto the calcined sample, and the calcined sample and glucose The mixture was mixed and ground using a ball mill. Here, the same equipment and method as in the above mixing and grinding process were used. The mixing and grinding were carried out using the specified method.

[0398] Next, in the dry room environment described above, use a hot plate and heat at 50°C for at least one hour. Drying was performed for less than 2 hours.

[0399] Subsequently, under the dry room environment described above, a vacuum dryer is used to dry the material in a 0.1 MPa vacuum at 80°C. It was then dried for 2 hours.

[0400] Next, the pieces were fired in a muffle furnace at 600°C for 10 hours.

[0401] Subsequently, under the dry room environment described above, the aggregated active material particles are broken down using a ball mill. This crushing process was carried out under the same conditions as the mixing and crushing of the raw materials described above, but with a rotation speed of 20 The difference lies in the setting of 0 rpm and a processing time of 30 minutes.

[0402] Next, in the dry room environment described above, use a hot plate and heat at 50°C for at least one hour. Drying was performed for less than 2 hours.

[0403] Subsequently, under the dry room environment described above, a vacuum dryer was used to dry the material in a vacuum of 0.1 MPa, and 17 The drying process was carried out at a temperature of 5°C for 2 hours.

[0404] Through the above process, LiFePO4 particles with a carbon layer formed on their surface were fabricated. The primary particle diameter of LiFePO4 is between 50 nm and 300 nm, and the secondary particle diameter is The particle size was 2 μm or less.

[0405] Graphene oxide is a material produced using the Hummers method. In the manufacturing process, graphite, KMO4, and sulfuric acid are mixed together to oxidize the graphite. After washing with hydrochloric acid, the material is dispersed in water and a portion of the graphite is removed using an ultrasonic cleaner. Afterward, the hydrochloric acid is removed, and the water is removed using an evaporator and ethanol under reduced pressure. Next, the obtained sample is pulverized in a dancing mill and dried. Through the above process, graphite oxide is produced. I made a n.

[0406] In the fabrication of the negative electrode, MCMB with a silicon oxide layer formed on the surface of the particles, NMP, and pVdF The mixture was then stirred and mixed in a kneader at 2000 rpm for 5 minutes. The weight ratio of pVdF was set to 10 wt% (weight percentage).

[0407] Furthermore, the process involves adding NMP and stirring / mixing at 2000 rpm for 5 minutes, with the sample being coated. The process was repeated until the viscosity was suitable for the work.

[0408] The slurry was formed by the above process. Furthermore, the slurry was coated using a coating device (applicator). The coating was applied to a copper foil with a thickness of 18 μm using [a specific method]. At this time, the [specific method] was applied between the coating part of the coating apparatus and the coated surface. The spacing was set to 230 μm, and the coating speed was set to 10 mm / sec.

[0409] The above sample was dried with hot air at 70°C for 40 minutes, and then pressed using a roll press. Furthermore, it was heated at 170°C for 10 hours under reduced pressure, and then pressed again to obtain... The negative electrode was created by punching out a portion of the electrode. The temperature of the press machine's roll was also adjusted. Pressing was performed at 120°C, under conditions that reduced the thickness of the positive electrode by 20%. The active material layer has a thickness of 89 μm, and the electrode density is 1.42 g / cm³. 3 And MCMB The dosage is approximately 11.4 mg / cm³. 2 Therefore, the unipolar theoretical capacity is approximately 4.2 mAh / cm². 2 That is .

[0410] MCMB particles with a silicon oxide layer formed on them are materials prepared using the sol-gel method. In the preparation of MCMB particles with a silicon layer, silicon ethoxide, hydrochloric acid, and toluene are used. Adding and stirring prepared a Si(OEt)4toluene solution. At this time, the following will be produced The silicon dioxide is added so that the proportion of silicon dioxide relative to MCMB is 1 wt% (weight percent). The amount of toxide was determined. The mixing ratio of this solution was 3.14 × 10⁻⁶ of Si(OEt)₄. ―4 2.91 × 10⁻⁶ moles of 1N hydrochloric acid ―4 The amount of toluene was set to 2 ml in moles.

[0411] Next, in the dry room environment described above, the average particle size of the Si(OEt)4 toluene solution is 9 μm MCMB was added and the mixture was stirred. After that, the solution was left in a humid environment at 70°C for 3 hours. It was held.

[0412] Next, the material was fired in a muffle furnace at 500°C for 3 hours under a nitrogen atmosphere.

[0413] Subsequently, by crushing the aggregated active material particles in a mortar, a silicon oxide layer was formed. CMB particles were produced.

[0414] Furthermore, using the above positive and negative electrodes, a CR2032 type (20mm diameter, 3.2mm height) A coin-shaped cell was fabricated. At this time, a 25 μm thick polypropylene was used as the separator. Pyrene was used. Ethylene carbonate (EC) and diethyl carbonate were used as the electrolyte. Mix bonate (DEC) and phosphoric acid hexafluoride in a volume ratio of 3:7, and add the resulting solution to the phosphoric acid hexafluoride solution. Electrolyte prepared by dissolving lithium (LiPF6) at a concentration of 1 mole / liter. I used it.

[0415] Furthermore, the charge and discharge capacity of the fabricated coin-type cells was evaluated. The evaluation used a constant current charge / discharge device. Using a Toyo Systems TOSCAT-3100, with an ambient temperature of 25°C and a charge / discharge rate of 0 Charging and discharging of coin-type cells at 0.2C (34mA / g), with an upper voltage limit of 4.0V and a lower voltage limit of 2.0V. An electrical test was conducted.

[0416] The results of the charge-discharge test are shown in Figure 25. In Figure 25, the horizontal axis is capacity (mAh / g) and the vertical axis is voltage. (V) is shown. Note that the number of samples for charge / discharge evaluation was set to 3, and the results for each are shown as a solid line, a dashed line, and It is shown with a dotted line.

[0417] Figure 25 shows that all samples have a maximum charge and discharge capacity of approximately 120 mAh / g. It can be seen that this is the case. Therefore, an energy storage device can be constructed using the above positive and negative electrodes. It was confirmed that this was the case. [Explanation of symbols]

[0418] 100 devices 110 Data 111 Energy Storage 113 circuits 114 Antenna 115 circuits 116 circuits 118 Antenna 119 circuits 121 circuits 131 transistors 132 transistors 141 circuits 142 circuits 143 load 150 transistors 170 transistors 191 circuits 192 Interface 193 circuits 194 circuits 200 equipment 211 Circuits 212 Antenna 213 circuits 214 circuits 215 circuits 221 Circuits 222 circuits 223 Antenna 230 circuits 231 circuits 235 Sensors 240 External power supply 400 memory cells 411 transistors 412 transistors 413 Capacitive element 631 transistors 632 Capacitive elements 633 transistors 634 transistors 635 transistors 636 Inverter 637 Capacitive elements 651 Memory circuit 652 Memory circuit 653 Selector 654 Selector 701 units 702 units 703 units 704 units 710 Processor 711 Bus Bridge 712 memory 713 Memory Interface 715 Clock generation circuit 720 Controller 721 Controller 722 I / O Interfaces 730 Power Gate Unit 731 Switch 732 switches 740 Clock generation circuit 741 Crystal Oscillator Circuit 742 Oscillator 743 Crystal unit 745 Timer Circuit 746 I / O interfaces 750 I / O ports 751 Comparator 752 I / O interfaces 761 Bus Line 762 Bus Line 763 Bus Line 764 data bus lines 770 Connection terminals 771 Connection terminals 772 Connection terminals 773 Connection terminals 774 Connection terminals 775 Connection terminals 776 Connection terminals 780 registers 783 Register 784 Register 785 Register 786 Registers 787 Register 801 Transistor 802 Transistors 803 Terminal section 811a conductive layer 811b Conductive layer 811c conductive layer 813 Oxide semiconductor layer 814 Insulating layer 815a conductive layer 815b Conductive layer 815c conductive layer 816 Insulating layer 818 Conductive layer 821 Wiring layer 822 Wiring layer 823 Wiring layer 824 wiring layer 825 wiring layer 826 wiring layer 831a wiring layer 831b Wiring layer 832a Wiring layer 832b Wiring layer 833a wiring layer 833b wiring layer 834a Wiring layer 834b wiring layer 835a wiring layer 835b wiring layer 836a wiring layer 836b wiring layer 837a wiring layer 837b Wiring layer 838a Wiring layer 838b wiring layer 900 Circuit Boards 910 Labels 911 terminal 912 Circuit 913 Energy Storage Unit 914 Antenna 915 Antenna 916 layers 917 layers 918 Antenna 919 terminal 920 Display device 921 Sensor 922 terminals 930 cabinets 931 negative electrode 932 Positive electrode 933 Separator 951 terminal 952 terminals 961 Negative electrode current collector 962 Negative electrode active material layer 973 Negative electrode active material 974 Conductive additive 975 Graphene 981 Positive electrode current collector 982 Positive electrode active material layer 983 Cathode active material 984 Graphene 991 Positive electrode current collector 992 Positive electrode active material layer 993 Positive electrode 994 Negative electrode current collector 995 Negative electrode active material layer 996 negative electrode 997 Separator 998 Electrolyte 999 Exterior 1100 Mobile devices 1111 cabinet 1112 Display section 1113 Energy storage device 1114 Power switch 1121 terminal 1122 terminal 1131 Wireless communication circuit 1132 Analog Baseband Circuit 1133 Digital Baseband Circuit 1134 Energy storage device 1135 Power supply circuit 1136 Application Processors 1137 CPU 1141 Display Controller 1142 memory 1143 Display 1144 Display section 1145 Source Driver 1146 Gate Driver 1148 keyboard 1149 Touch Sensor 1211 cabinet 1212 Tip tool 1214 Trigger Switch 1215 Handle section 1216 Energy storage device 1217 Detachable control switch 1221 cabinet 1222 Blade 1224 Trigger Switch 1225 Handle section 1226 Energy storage device 1227 Detachable control switch 1300 Power supply device 1311 Antenna 1312 Antenna 1400 display device 1401 cabinet 1402 Display section 1403 Speaker section 1404 Energy storage device 1410 Lighting device 1411 cabinet 1412 light source 1413 Energy storage device 1414 Ceiling 1415 Side wall 1416 floors 1417 Window 1420 Indoor unit 1421 cabinet 1422 Air outlet 1423 Energy storage device 1424 Outdoor unit 1430 Electric Refrigerator / Freezer 1431 cabinet 1432 Refrigerator door 1433 Freezer door 1434 Energy storage device 1440 Clock 1441 Energy storage device 1450 Power supply device 1580 Electric vehicles 1581 Energy storage device 1582 Control circuit 1583 Drive unit 1584 Processing Unit 1590 Power supply device

Claims

[Claim 1] Energy storage device, It has a power supply device, The energy storage device has data that identifies the energy storage device, The aforementioned energy storage device is Energy storage device, A switch that controls whether or not to supply power supplied from the power supply device to the energy storage body, The control circuit has a function of controlling the conduction state of the switch in accordance with a control signal input from the power supply device, The power supply device is The data input from the energy storage device identifies the energy storage device, The control signal corresponding to the identified energy storage device is generated, A power storage system having a signal processing circuit that includes a function to output the generated control signal to the power storage device.

Images