Method for manufacturing a light-emitting device, light-emitting device, and light-emitting module

Abstract

To provide a method for manufacturing a light-emitting device, a light-emitting device, and a light-emitting module that can reduce the incidence of light emitted by a light-emitting device that is to be emitted onto a wavelength conversion member on a light-emitting device that is not to be emitted, when controlling the emission of light from multiple light-emitting devices individually. [Solution] The method for manufacturing a light-emitting device comprises the steps of: preparing a structure having a plurality of light-emitting elements and support members disposed between at least a plurality of light-emitting elements; placing a mask member on the structure, which covers the support members between the plurality of light-emitting elements and has a plurality of openings disposed above each of the light-emitting surfaces of the plurality of light-emitting elements, with one opening above each light-emitting surface; placing wavelength conversion members in the plurality of openings; and removing the mask member and the support members between the plurality of light-emitting elements after placing the wavelength conversion members.

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a light-emitting device, a light-emitting device, and a light-emitting module.

Background Art

[0002] For example, Patent Document 1 discloses a method for manufacturing a light-emitting module, which includes a step of transferring a plurality of light-emitting elements on a growth substrate to a base substrate and then peeling the growth substrate from the plurality of light-emitting elements, a step of forming a light-shielding layer on the base substrate so as to cover the plurality of light-emitting elements, a step of removing the light-shielding layer on the upper surface of the light-emitting element, and a step of forming a color conversion layer on the upper surface of the light-emitting element.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] An object of the present disclosure is to provide a method for manufacturing a light-emitting device, a light-emitting device, and a light-emitting module that can reduce the incidence of light emitted from a light-emitting element to be emitted onto a wavelength conversion member on a light-emitting element not to be emitted when individually controlling the light emission of a plurality of light-emitting elements.

Means for Solving the Problems

[0005] According to one aspect of the present disclosure, a method for manufacturing a light-emitting device comprises the steps of: preparing a structure having a plurality of light-emitting elements, each having a light-emitting surface; and a support member disposed at least between the plurality of light-emitting elements and supporting the plurality of light-emitting elements; placing a mask member on the structure, the mask member having a plurality of openings, each of which is disposed above the light-emitting surface of the plurality of light-emitting elements and one opening above each of the light-emitting surfaces; placing wavelength conversion members in the plurality of openings; and removing the mask member and the support member between the plurality of light-emitting elements after placing the wavelength conversion members.

[0006] According to one aspect of the present disclosure, the light-emitting device comprises a light-emitting element having a light-emitting surface having an outer peripheral region and an inner region surrounded by the outer peripheral region in a plan view and having a surface roughness greater than that of the outer peripheral region, and a wavelength conversion member disposed on the light-emitting surface, wherein the lower surface of the wavelength conversion member is located on the inner region and not on the outer peripheral region.

[0007] According to one aspect of the present disclosure, the light-emitting device module comprises a wiring board, a plurality of light-emitting devices arranged on the wiring board with the surfaces of the light-emitting devices opposite to the light-emitting surface facing the wiring board, and light-reflective members arranged between the light-emitting devices of each of the plurality of light-emitting devices and between the wavelength conversion members. [Effects of the Invention]

[0008] According to this disclosure, when controlling the emission of multiple light-emitting elements individually, it is possible to provide a method for manufacturing a light-emitting device, a light-emitting device, and a light-emitting module that can reduce the incidence of light emitted by a light-emitting element that is to be emitted onto a wavelength conversion member on a light-emitting element that is not to be emitted. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic plan view of the light-emitting device according to the first embodiment. [Figure 2]This is a schematic cross-sectional view along line II-II in Figure 1. [Figure 3] This is a schematic plan view of the light-emitting device according to the second embodiment. [Figure 4] Figure 3 is a schematic cross-sectional view along line IV-IV. [Figure 5] This is a schematic cross-sectional view of a light-emitting module according to an embodiment. [Figure 6] This is a schematic cross-sectional view illustrating one step in the manufacturing method of a light-emitting element according to the first embodiment. [Figure 7] This is a schematic cross-sectional view illustrating one step in the manufacturing method of a light-emitting element according to the first embodiment. [Figure 8] This is a schematic cross-sectional view illustrating one step in the manufacturing method of a light-emitting element according to the first embodiment. [Figure 9] This is a schematic cross-sectional view illustrating one step in the manufacturing method of a light-emitting element according to the first embodiment. [Figure 10] This is a schematic cross-sectional view illustrating one step in the manufacturing method of a light-emitting element according to the first embodiment. [Figure 11] This is a schematic cross-sectional view illustrating one step in the manufacturing method of a light-emitting element according to the first embodiment. [Figure 12] This is a schematic cross-sectional view illustrating one step in the manufacturing method of a light-emitting element according to the first embodiment. [Figure 13] This is a schematic plan view illustrating one step in the manufacturing method of a light-emitting element according to the first embodiment. [Figure 14] Figure 13 is a schematic cross-sectional view along line XIV-XIV. [Figure 15] This is a schematic plan view illustrating one step in the manufacturing method of a light-emitting element according to the first embodiment. [Figure 16] Figure 15 is a schematic cross-sectional view along the line XVI-XVI. [Figure 17] This is a schematic cross-sectional view illustrating one step in the manufacturing method of a light-emitting element according to the first embodiment. [Figure 18] This is a schematic cross-sectional view illustrating one step in the manufacturing method of a light-emitting element according to the first embodiment. [Figure 19] It is a schematic cross-sectional view for explaining one step of a method for manufacturing a light-emitting element according to the first embodiment. [Figure 20] It is a schematic plan view for explaining one step of a method for manufacturing a light-emitting element according to the second embodiment. [Figure 21] It is a schematic cross-sectional view taken along line XXI-XXI of FIG. 20. [Figure 22] It is a schematic cross-sectional view for explaining one step of a method for manufacturing a light-emitting element according to the second embodiment.

Embodiments for Carrying Out the Invention

[0010] <统一替换为 Hereinafter, embodiments will be described with reference to the drawings. The dimensions, materials, shapes, relative arrangements, etc. of the components described in the embodiments are not intended to be limited to only those, but are merely illustrative examples, unless otherwise specifically described. Note that the sizes and positional relationships of the members shown in each drawing may be exaggerated for clarity of explanation. In the following description, the same names and reference numerals indicate the same or similar members, and detailed descriptions will be omitted as appropriate. In addition, as a cross-sectional view, an end view showing only the cut surface may be shown.

[0011] [[ID=统一替换为 In the following description, terms indicating a specific direction or position (for example, "up", "down", and other terms including those terms) may be used. However, those terms are merely used for ease of understanding of the relative direction or position in the referenced drawings. If the relative direction or position relationship by terms such as "up" and "down" in the referenced drawings is the same, in drawings other than the present disclosure, actual products, etc., they do not have to be arranged in the same way as in the referenced drawings. The positional relationship expressed as "up (or down)" in this specification includes, for example, the case where two members are in contact and the case where two members are not in contact and one member is located above (or below) the other member when assuming that there are two members.

[0012] In the diagrams shown below, directions may be indicated by the X, Y, and Z axes. The X, Y, and Z axes are orthogonal to each other. For example, in this specification, the Z-axis direction is designated as the first direction Z, the X-axis direction as the second direction X, and the Y-axis direction as the third direction Y. Also, in this specification, the direction of the arrow on the Z axis is the main direction of light extraction.

[0013] [Light-emitting device according to the first embodiment] A light-emitting device 1 according to the first embodiment will be described with reference to Figures 1 and 2. The light-emitting device 1 comprises a light-emitting element 100 and a wavelength conversion member 200.

[0014] As shown in Figure 1, in a plan view, the shape of the light-emitting element 100 and the shape of the wavelength conversion member 200 are, for example, rectangular. In a plan view, the outer edge of the wavelength conversion member 200 is located inward from the outer edge of the light-emitting element 100. The length of one side of the light-emitting element 100 in a plan view is, for example, 10 μm or more and 200 μm or less.

[0015] <hibi> The light-emitting element 100 has a light-emitting surface 110. The light-emitting surface 110 is the surface from which light is mainly extracted from the light-emitting element 100. The light-emitting surface 110 has an outer peripheral region 110B and an inner region 110A surrounded by the outer peripheral region 110B in a plan view. In a plan view, the outer edge 110A1 of the inner region 110A is located inside the outer edge 110B1 of the outer peripheral region 110B. In a plan view, the area of ​​the inner region 110A is larger than the area of ​​the outer peripheral region 110B. In a plan view, the outer peripheral region 110B is, for example, a region of the light-emitting surface 110 within 10 μm, preferably within 5 μm, from the outer edge of the light-emitting surface 110.

[0016] The surface roughness of the inner region 110A is greater than that of the outer region 110B. Therefore, light is more easily extracted from the inner region 110A than from the outer region 110B. In this specification, surface roughness is, for example, the average surface roughness Ra. The average surface roughness Ra of the inner region 110A is, for example, 100 nm to 400 nm. The average surface roughness Ra of the outer region 110B is, for example, 1 nm to 10 nm. The surface roughness of the inner region 110A and the outer region 110B can be measured, for example, by a laser microscope or an atomic force microscope. The presence of an outer region 110B in the light-emitting surface 110 reduces the occurrence of chipping in the semiconductor structure 10, as will be described later.

[0017] <Wavelength conversion component> The wavelength conversion member 200 is positioned on the light-emitting surface 110 of the light-emitting element 100. The wavelength conversion member 200 includes, for example, a base material made of a translucent material and a phosphor dispersed in the base material. The base material can be, for example, epoxy resin, silicone resin, a resin mixed therewith, or glass. A portion of the light extracted from the light-emitting surface 110 of the light-emitting element 100 is incident on the wavelength conversion member 200 and its wavelength is converted by the phosphor. The color of the wavelength-converted light is, for example, yellow. As a yellow phosphor, for example, Y3Al5O 12 :Ce, or (Y,Lu,Gd)3(Al,Ga)5O 12 A phosphor with a composition represented by :Ce can be used. When using a yellow phosphor with such a composition, the peak wavelength of the light emitted by the active layer 12 of the light-emitting element 100, described later, is preferably 420 nm to 490 nm. The thickness of the wavelength conversion member 200 is, for example, 5 μm to 50 μm.

[0018] The wavelength conversion member 200 has an upper surface 201, a lower surface 202 located opposite the upper surface 201 in the first direction Z, and a side surface 203 connecting the upper surface 201 and the lower surface 202. In the light-emitting device 1, light is mainly extracted from the upper surface 201 and the side surface 203 of the wavelength conversion member 200. In the example shown in Figure 2, the angle between the upper surface 201 and the side surface 203 is approximately a right angle. The lower surface 202 of the wavelength conversion member 200 is located on the inner region 110A of the light-emitting surface 110 and not on the outer region 110B.

[0019] For example, if the lower surface 202 of the wavelength conversion member 200 is located on the outer peripheral region 110B, light from the light-emitting element 100 is less likely to enter the wavelength conversion member 200 from the outer peripheral region 110B compared to the inner region 110A. This is because the surface roughness of the outer peripheral region 110B is lower than that of the inner region 110A. Therefore, when the lower surface 202 of the wavelength conversion member 200 is located on the outer peripheral region 110B, the chromaticity tends to vary on the upper surface 201 of the wavelength conversion member 200. According to this embodiment, since the lower surface 202 of the wavelength conversion member 200 is not located on the outer peripheral region 110B, the chromaticity variation on the upper surface 201 of the wavelength conversion member 200 can be reduced.

[0020] According to this embodiment, the light-emitting element 100 can have the configuration described below.

[0021] (Semiconductor structure) As shown in Figure 2, the light-emitting element 100 has a semiconductor structure 10. The semiconductor structure 10 is made of a nitride semiconductor. In this specification, "nitride semiconductor" means, for example, In x Al y Ga 1-x-y This term includes semiconductors with all compositions obtained by varying the composition ratios x and y within the respective ranges in the chemical formula N(0≦x≦1,0≦y≦1,x+y≦1). Furthermore, "nitride semiconductors" also include those that further contain group V elements other than N (nitrogen) in the above chemical formula, and those that further contain various elements added to control various physical properties such as conductivity.

[0022] The semiconductor structure 10 includes a first semiconductor layer 11, an active layer 12, and a second semiconductor layer 13. The active layer 12 is located between the first semiconductor layer 11 and the second semiconductor layer 13 in the first direction Z. The first semiconductor layer 11 has a semiconductor layer containing n-type impurities. The second semiconductor layer 13 has a semiconductor layer containing p-type impurities. The active layer 12 is a light-emitting layer and has, for example, an MQW (Multiple Quantum Well) structure including multiple barrier layers and multiple well layers. The active layer 12 emits, for example, light with a peak wavelength of 210 nm to 580 nm.

[0023] The first semiconductor layer 11 has a first surface and a second surface 11B located on the opposite side of the first surface in the first direction Z. The first surface of the first semiconductor layer 11 constitutes the light-emitting surface 110 of the light-emitting element 100.

[0024] The second surface 11B of the first semiconductor layer 11 has a first region 11B1 and a second region 11B2. In a plan view, the area of ​​the first region 11B1 is larger than the area of ​​the second region 11B2. The active layer 12 and the second semiconductor layer 13 are arranged in the first region 11B1. The active layer 12 is located between the second region 11B2 and the second semiconductor layer 13.

[0025] Near the outer edge of the semiconductor structure 10, the semiconductor structure 10 is prone to chipping. According to this embodiment, since the surface roughness of the outer peripheral region 110B of the light-emitting surface 110 is smaller than the surface roughness of the inner region 110A, the intensity near the outer edge of the light-emitting surface 110 can be increased compared to the case where the surface roughness of the outer peripheral region 110B is the same as the surface roughness of the inner region 110A, and the case where the surface roughness of the outer peripheral region 110B is larger than the surface roughness of the inner region 110A, thereby reducing the occurrence of chipping in the semiconductor structure 10.

[0026] (1st protective film) The light-emitting element 100 has a first protective film 20. The first protective film 20 is located in the outer peripheral region 110B of the light-emitting surface 110. For example, SiO2, SiON, and SiN can be used as the material for the first protective film 20. The thickness of the first protective film 20 is, for example, 0.2 μm or more and 2 μm or less. Here, the thickness of the first protective film 20 refers to the maximum thickness of the first protective film 20 in the first direction Z.

[0027] (Second protective film) The second protective film 40 is continuously arranged on the inner region 110A of the light-emitting surface 110 and on the first protective film 20. For example, SiO2, SiON, and SiN can be used as the material for the second protective film 40. The thickness of the second protective film 40 is, for example, 0.1 μm or more and 1 μm or less. The second protective film 40 is located between the inner region 110A of the light-emitting surface 110 and the lower surface 202 of the wavelength conversion member 200. By covering the roughened inner region 110A, the upper surface of the second protective film 40 also becomes rough. The surface roughness of the second protective film 40 on the inner region 110A is greater than the surface roughness of the second protective film 40 arranged on the outer region 110B via the first protective film 20.

[0028] The lower surface 202 of the wavelength conversion member 200 covers the upper surface of the second protective film 40 along its upper surface. Therefore, the lower surface 202 of the wavelength conversion member 200 becomes rough. This improves the incidence efficiency of light from the second protective film 40 to the wavelength conversion member 200.

[0029] (First electrode and second electrode) The light-emitting element 100 has a first electrode 61 and a second electrode 62. The first electrode 61 is located in a second region 11B2 on the second surface 11B of the first semiconductor layer 11 and is electrically connected to the first semiconductor layer 11. The second electrode 62 is located on the surface 13A side of the second semiconductor layer 13 opposite to the active layer 12 and is electrically connected to the second semiconductor layer 13. The first electrode 61 and the second electrode 62 can be, for example, a single layer of metal containing Ti, Rh, Au, Pt, Al, Ag, or Ru, or a stacked structure containing at least two of these metal layers.

[0030] (Transparent conductive film) The light-emitting element 100 has a translucent conductive film 90. The translucent conductive film 90 is positioned in contact with the surface 13A of the second semiconductor layer 13 that is opposite to the active layer 12. The second electrode 62 is positioned in contact with the translucent conductive film 90. The second electrode 62 is electrically connected to the second semiconductor layer 13 via the translucent conductive film 90. The translucent conductive film 90 has the function of diffusing the current supplied through the second electrode 62 in the planar direction of the second semiconductor layer 13. As the material for the translucent conductive film 90, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), ZnO, or In2O3 can be used.

[0031] (1st reflective film) The light-emitting element 100 has a first reflective film 30. The first reflective film 30 covers at least the side 13A of the second semiconductor layer 13 that is opposite to the active layer 12. The first reflective film 30 is reflective to the light emitted by the active layer 12. The reflectance of the first reflective film 30 with respect to the peak wavelength of the light emitted by the active layer 12 is, for example, 40% or more, preferably 60% or more. Light that has traveled from the active layer 12 to the second semiconductor layer 13 side opposite to the light-emitting surface 110 can be reflected by the first reflective film 30 to the inner region 110A side of the light-emitting surface 110. This improves the efficiency of light extraction from the inner region 110A.

[0032] The first reflective film 30 can cover almost the entire surface of the semiconductor structure 10 opposite to the light-emitting surface 110. This increases the amount of light reflected to the inner region 110A, thereby further improving the efficiency of light extraction from the inner region 110A.

[0033] The first reflective film 30 may, for example, have a dielectric multilayer film. The dielectric multilayer film may include a plurality of first films and a plurality of second films. The first films and second films are alternately stacked in the first direction Z. For example, the first film contains Nb2O5 and the second film contains SiO2.

[0034] (Second reflective film) The light-emitting element 100 has a second reflective film 80 laminated on a first reflective film 30. The second reflective film 80 reflects the light transmitted through the first reflective film 30 toward the inner region 110A, thereby improving the light extraction efficiency. The second reflective film 80 is, for example, a metal film. The second reflective film 80 includes, for example, Al, Ti, or a laminated structure thereof.

[0035] (Insulating film) The light-emitting element 100 has an insulating film 50. The insulating film 50 is placed on the side surface 10C of the semiconductor structure 10 and protects the side surface 10C. For example, SiO2 can be used as the material for the insulating film 50. The first protective film 20 covers the upper surface 50A of the insulating film 50 placed on the side surface 10C of the semiconductor structure 10.

[0036] The insulating film 50 can be positioned on the side of the semiconductor structure 10 opposite to the light-emitting surface 110 so as to cover the first reflective film 30, the second reflective film 80, the first electrode 61, and the second electrode 62.

[0037] (First conductive member and second conductive member) The light-emitting element 100 has a first conductive member 71 and a second conductive member 72. The first conductive member 71 and the second conductive member 72 are arranged in the insulating film 50 spaced apart from each other. The first conductive member 71 can be connected to a first electrode 61 at a first opening 50a formed in the insulating film 50. The second conductive member 72 can be connected to a second electrode 62 at a second opening 50b formed in the insulating film 50. The first conductive member 71 and the second conductive member 72 include, for example, a laminated structure of Ti, Rh, Au, Pt, Ru, Al, or any two of these.

[0038] [Light-emitting device according to the second embodiment] The light-emitting device 2 according to the second embodiment will be described with reference to Figures 3 and 4.

[0039] In the light-emitting device 2 according to the second embodiment, the shape of the wavelength conversion member 200 is different from that of the light-emitting device 1 according to the first embodiment.

[0040] In this embodiment as well, the lower surface 202 of the wavelength conversion member 200 is located on the inner region 110A of the light-emitting surface 110 and not on the outer region 110B. Furthermore, according to this embodiment, as shown in Figure 3, in a plan view, the outer edge 201A of the upper surface 201 of the wavelength conversion member 200 is located outside the outer edge 202A of the lower surface 202 and overlaps with the outer region 110B of the light-emitting surface 110. As shown in Figure 4, the angle between the upper surface 201 and the side surface 203 of the wavelength conversion member 200 is acute. The width of the wavelength conversion member 200 in the second direction X and the width in the third direction Y increase from the lower surface 202 toward the upper surface 201. According to this embodiment, the area of ​​the upper surface 201 can be increased compared to the first embodiment while ensuring that the lower surface 202 of the wavelength conversion member 200 is not located on the outer region 110B of the light-emitting surface 110. This makes it possible to increase the light-emitting area of ​​the light-emitting device 2 while reducing chromaticity variation.

[0041] [Light-emitting module] A light-emitting module 300 according to the embodiment will be described with reference to Figure 5.

[0042] The light-emitting module 300 according to the embodiment comprises a wiring board 400 and the aforementioned light-emitting devices 1 arranged on the wiring board 400. For example, a plurality of light-emitting devices 1 are arranged on the wiring board 400. Each light-emitting device 1 is arranged on the wiring board 400 with the surface opposite to the light-emitting surface 110 of the light-emitting element 100 facing the upper surface of the wiring board 400. Note that the light-emitting devices included in the light-emitting module 300 may be the light-emitting devices 2 according to the second embodiment.

[0043] The wiring board 400 has an insulating substrate 401 and a wiring section 402 disposed on at least the upper surface of the insulating substrate 401. The first conductive member 71 and the second conductive member 72 of the light-emitting device 1 are joined to the wiring section 402 via a conductive connecting member 410 and are electrically connected to the wiring section 402. For example, Cu, Au, etc. can be used as the material for the connecting member 410. Current is supplied to the light-emitting device 1 via the wiring section 402 and the connecting member 410. Each of the multiple light-emitting devices 1 can be individually controlled to light up.

[0044] The light-emitting module 300 further comprises a light-reflective member 500. The light-reflective member 500 is arranged on the wiring board 400 between each of the light-emitting elements 100 of the multiple light-emitting devices 1, and between each of the wavelength conversion members 200. The light-reflective member 500 is in contact with the side surface 203 of the wavelength conversion member 200. The upper surface 201 of the wavelength conversion member 200 is exposed from the light-reflective member 500. The light-reflective member 500 covers the side surface 10C of the semiconductor structure 10 via the insulating film 50. The light-reflective member 500 is also arranged between the lower surface of the light-emitting element 100 and the upper surface of the wiring board 400.

[0045] The light-reflecting member 500 has reflectivity to light emitted by the light-emitting device 1. The reflectivity of the light-reflecting member 500 with respect to the peak wavelength of the light converted by the wavelength conversion member 200 from the light emitted by the active layer 12 is, for example, 60% or more, preferably 80% or more. The light-reflecting member 500 includes, for example, a base material and a light-diffusing agent capable of diffusely reflecting the light emitted by the light-emitting device 1. As the base material of the light-reflecting member 500, for example, silicone resin, epoxy resin, or acrylic resin can be used. As the light-diffusing agent of the light-reflecting member 500, for example, particles such as TiO2, SiO2, Al2O3, ZnO, MgO, ZrO2, Y2O3, CaF2, MgF2, Nb2O5, BaTiO3, Ta2O5, BaSO4, or glass can be used.

[0046] As a comparative example, consider a light-emitting module in which wavelength conversion members are continuously arranged on the upper surface of each light-emitting element 100 and in the region between adjacent light-emitting elements 100, so as to span across multiple light-emitting elements 100. When individually controlling the lighting of multiple light-emitting elements 100 in this comparative example light-emitting module, it is likely that the light emitted by a light-emitting element 100 that is to be emitted will incident on the wavelength conversion member on an adjacent light-emitting element 100 that is not to be emitted, causing the phosphor contained in the wavelength conversion member on the non-emitting light-emitting element 100 to emit light.

[0047] According to this embodiment, multiple wavelength conversion members 200 are arranged separately for each of the multiple light-emitting elements 100, and light-reflective members 500 are arranged between adjacent light-emitting elements 100 and between adjacent wavelength conversion members 200. This reduces the incidence of light emitted by the light-emitting elements 100 that are to be emitted onto the wavelength conversion members 200 on the light-emitting elements 100 that are not to be emitted when the multiple light-emitting elements 100 are individually controlled to emit light. When the light-emitting module 300 is observed from the upper surface 201 side of the wavelength conversion member 200, the difference in brightness between the upper surface 201 of the wavelength conversion member 200 on the light-emitting element 100 that is to be emitted and the upper surface 201 of the wavelength conversion member 200 on the light-emitting element 100 that is not to be emitted can be made into a light-emitting module 300 with a large difference in brightness.

[0048] [Manufacturing method for a light-emitting device according to the first embodiment] A method for manufacturing a light-emitting device according to the first embodiment will be described with reference to Figures 6 to 19.

[0049] <Process for preparing the structure> The manufacturing method of the light-emitting device according to the first embodiment includes a step of preparing the structure 600 shown in Figures 13 and 14. The structure 600 has a plurality of light-emitting elements 100 and a support member 700.

[0050] As shown in Figure 14, each light-emitting element 100 includes, as described above, a semiconductor structure 10, a first protective film 20, a second protective film 40, a light-transmitting conductive film 90, a first electrode 61, a second electrode 62, a first reflective film 30, a second reflective film 80, an insulating film 50, a first conductive member 71, and a second conductive member 72.

[0051] The support member 700 is positioned between at least a plurality of light-emitting elements 100 and supports the plurality of light-emitting elements 100. As shown in Figure 13, the plurality of light-emitting elements 100 are arranged side by side in a second direction X and a third direction Y. The support member 700 is positioned between adjacent light-emitting elements 100 in the second direction X and between adjacent light-emitting elements 100 in the third direction Y.

[0052] Furthermore, the support member 700 is positioned on the side of the light-emitting element 100 opposite to the light-emitting surface 110 (the bottom surface in the light-emitting element 100 shown in Figure 14). The support member 700 positioned between adjacent light-emitting elements 100 covers the side surface 10C of the semiconductor structure 10 via the insulating film 50. On the side of the light-emitting element 100 opposite to the light-emitting surface 110, the support member 700 covers the insulating film 50, the first conductive member 71, and the second conductive member 72. In the structure 600, the second protective film 40 is exposed from the support member 700. The support member 700 is a resin member containing a resin such as epoxy resin, acrylic resin, or polyimide resin.

[0053] The process for preparing the structure 600 may include the steps described below with reference to Figures 6 to 14. The structure 600 prepared by the steps described below further includes a support substrate 602.

[0054] In the process shown in Figure 6, a semiconductor structure 10 is formed on the growth substrate 601. For example, a first semiconductor layer 11, an active layer 12, and a second semiconductor layer 13 are formed sequentially on the growth substrate 601 by the MOCVD (Metal Organic Chemical Vapor Deposition) method.

[0055] As the growth substrate 601, for example, an insulating substrate such as sapphire or spinel (MgA12O4) with one of the C-plane, R-plane, or A-plane as the main surface can be used. A conductive substrate such as SiC (including 6H, 4H, 3C), ZnS, ZnO, GaAs, or Si may also be used as the growth substrate 601. In this embodiment, a sapphire substrate with the C-plane as the main surface is used as the growth substrate 601.

[0056] After forming the semiconductor structure 10 on the growth substrate 601, a translucent conductive film 90 is formed on the second semiconductor layer 13. For example, the translucent conductive film 90 can be formed by sputtering.

[0057] After forming the translucent conductive film 90, a portion of the second semiconductor layer 13 and a portion of the active layer 12 are removed, for example, by dry etching using a resist as a mask, thereby forming a first region 11B1 and a second region 11B2 on the second surface 11B of the first semiconductor layer 11.

[0058] After forming the first region 11B1 and the second region 11B2, the first electrode 61, the second electrode 62, the first reflective film 30, the second reflective film 80, the insulating film 50, the first conductive member 71, and the second conductive member 72 are formed. The first electrode 61, the second electrode 62, the first reflective film 30, the second reflective film 80, the insulating film 50, the first conductive member 71, and the second conductive member 72 can be formed, for example, by sputtering or by CVD (Chemical Vapor Deposition).

[0059] The first electrode 61 is positioned in the second region 11B2 of the second surface 11B and is in contact with the first semiconductor layer 11. The second electrode 62 is positioned on the translucent conductive film 90 and is in contact with the translucent conductive film 90. The first conductive member 71 is connected to the first electrode 61. The second conductive member 72 is connected to the second electrode 62.

[0060] The first reflective film 30 covers the second surface 11B, the active layer 12, the second semiconductor layer 13, the translucent conductive film 90, the first electrode 61, and the second electrode 62. The second reflective film 80 is placed on the first reflective film 30.

[0061] For example, after forming the first electrode 61, the second electrode 62, and the first reflective film 30, a portion of the second semiconductor layer 13, a portion of the active layer 12, and a portion of the first semiconductor layer 11 are removed, for example, by dry etching using a resist as a mask, to form a groove 15 in the semiconductor structure 10. The groove 15 does not reach the growth substrate 601. A portion of the first semiconductor layer 11 remains between the groove 15 and the first surface 11A of the first semiconductor layer 11 that is in contact with the growth substrate 601.

[0062] After forming the groove 15, an insulating film 50 is formed. The insulating film 50 covers the first reflective film 30 and the second reflective film 80. The insulating film 50 also covers the surface of the semiconductor structure 10 that defines the groove 15.

[0063] The first conductive member 71 penetrates the insulating film 50 and the first reflective film 30 and is connected to the first electrode 61, and is also positioned on the insulating film 50. The second conductive member 72 penetrates the insulating film 50 and the first reflective film 30 and is connected to the second electrode 62, and is also positioned on the insulating film 50.

[0064] After the process shown in Figure 6, the second surface 11B side of the semiconductor structure 10 is joined to the support substrate 602 via the support member 700, as shown in Figure 7. The support member 700 covers the first conductive member 71, the second conductive member 72, and the insulating film 50. The support member 700 is also positioned in the groove 15, and the insulating film 50 is covered in the groove 15. Note that in Figure 7, the vertical positional relationship between the growth substrate 601 and the semiconductor structure 10 is reversed compared to Figure 6.

[0065] As the support substrate 602, for example, a substrate such as sapphire, spinel, SiC, ZnS, ZnO, GaAs, or Si can be used.

[0066] After bonding the semiconductor structure 10 to the support substrate 602, the growth substrate 601 is removed, exposing the first surface 11A of the first semiconductor layer 11, as shown in Figure 8. The growth substrate 601 can be removed by methods such as laser lift-off, grinding, polishing, wet etching, or dry etching.

[0067] When separating the growth substrate 601 and the semiconductor structure 10 by laser lift-off, as shown in Figure 7, the laser lift-off can be performed even if the first surface 11A of the semiconductor structure 10 in contact with the growth substrate 601 is not separated in the XY plane by the groove 15. In this case, separation of the growth substrate 601 and the semiconductor structure 10 becomes easier compared to the case where the first surface 11A of the semiconductor structure 10 in contact with the growth substrate 601 is separated in the XY plane. Alternatively, the semiconductor structure 10 may be separated into multiple parts on the growth substrate 601 by forming the groove 15 until it reaches the growth substrate 601. In this case, the step of removing the first semiconductor layer 11 for separating the semiconductor structure 10 into multiple parts, which will be described later, can be omitted after removing the growth substrate 601.

[0068] After exposing the first surface 11A, the first semiconductor layer 11 is removed from the first surface 11A side by methods such as polishing, wet etching, or dry etching. Examples of polishing methods include CMP (Chemical Mechanical Polishing), and examples of dry etching methods include RIE (Reactive Ion Etching). The first semiconductor layer 11 located above the groove 15 is removed. As a result, the semiconductor structure 10 is separated into multiple parts, as shown in Figure 9. The first surface 11A of each separated semiconductor structure 10 becomes the light-emitting surface 110 of the light-emitting element 100.

[0069] Furthermore, between adjacent semiconductor structures 10, the upper surface 700A of the support member 700 and the upper surface 50A of the end portion on the first surface 11A side of the insulating film 50, which is located on the side surface 10C of the semiconductor structure 10, are exposed from the semiconductor structure 10.

[0070] After the semiconductor structure 10 is separated into multiple parts, a first protective film 20 is formed as shown in Figure 10. The first protective film 20 covers the outer peripheral region 110B of the light-emitting surface 110. The first protective film 20 also covers the upper surface 50A of the insulating film 50 and the upper surface 700A of the support member 700 between adjacent semiconductor structures 10. The first protective film 20 can be formed, for example, by the CVD method.

[0071] After forming the first protective film 20, the inner region 110A of the light-emitting surface 110 exposed from the first protective film 20 is roughened, as shown in Figure 11. For example, the inner region 110A can be roughened by dry etching with a chlorine-containing gas or by wet etching using an alkaline solution such as TMAH (Tetramethylammonium hydroxide). The roughened inner region 110A includes multiple protrusions. The outer peripheral region 110B of the light-emitting surface 110 covered by the first protective film 20 is not etched and therefore not roughened.

[0072] If the entire surface of the light-emitting surface 110 is roughened, chipping of the first semiconductor layer 11 is more likely to occur near the outer edge of the light-emitting surface 110. According to this embodiment, by not roughening the outer peripheral region 110B of the light-emitting surface 110, chipping of the first semiconductor layer 11, which is likely to occur near the outer edge of the light-emitting surface 110, can be reduced.

[0073] After roughening the inner region 110A, a second protective film 40 is formed continuously on the inner region 110A and the first protective film 20, as shown in Figure 12. The second protective film 40 can be formed, for example, by CVD. Multiple protrusions are also formed on the upper surface of the second protective film 40 that covers the inner region 110A, which includes multiple protrusions.

[0074] After forming the second protective film 40 continuously on the inner region 110A and the first protective film 20, the first protective film 20 and the second protective film 40 located on the upper surface 700A of the support member 700 are removed. As a result, as shown in Figure 14, the upper surface 700A of the support member 700 located between the multiple light-emitting elements 100 is exposed from the first protective film 20 and the second protective film 40. For example, the first protective film 20 and the second protective film 40 located on the upper surface 700A of the support member 700 can be removed by dry etching using a resist as a mask.

[0075] The structure 600 can be prepared by the above steps. In the structure 600, a first protective film 20 and a second protective film 40 are formed on the light-emitting surfaces 110 of the multiple light-emitting elements 100 such that a support member 700 located between the multiple light-emitting elements 100 is exposed. The first protective film 20 and the second protective film 40 are separated for each light-emitting element 100. The structure 600 may be purchased and prepared.

[0076] <Step of placing the mask component onto the structure> The manufacturing method of the light-emitting device according to the first embodiment includes the step of placing the mask member 800 on the structure 600, as shown in Figures 15 and 16.

[0077] The mask member 800 covers the upper surface 700A of the support member 700 between the multiple light-emitting elements 100. According to this embodiment, the mask member 800 covers the second protective film 40 located above the outer peripheral region 110B of the light-emitting surface 110.

[0078] The mask member 800 has a plurality of openings 801 positioned above each of the light-emitting surfaces 110 of the plurality of light-emitting elements 100. One opening 801 is located above one of the light-emitting surfaces 110. According to this embodiment, the opening 801 is located above the inner region 110A of the light-emitting surface 110. The second protective film 40 on the inner region 110A is exposed at the opening 801.

[0079] For example, a resist in which an opening 801 is provided can be referred to as a mask member 801. The step of arranging the mask member 800 includes the step of continuously forming the resist on the upper surface of the second protective film 40, which is the upper surface of the light-emitting element 100, and on the upper surface 700A of the support member 700 between the plurality of light-emitting elements 100. Furthermore, the step of arranging the mask member 800 includes the step of removing the resist above the inner region 110A by exposure and development after the resist has been formed, thereby forming the opening 801.

[0080] According to this embodiment, in the step of positioning the mask member 800, the lower end 802A of the inner surface 802 of the mask member 800 that defines the opening 801 is positioned on the outer peripheral region 110B of the light-emitting surface 110. In other words, the lower end 802A of the inner surface 802 of the mask member 800 is not positioned on the inner region 110A of the light-emitting surface 110.

[0081] <Step of arranging wavelength conversion members in multiple apertures> The manufacturing method of the light-emitting device according to the first embodiment includes the step of arranging wavelength conversion members 200 in a plurality of apertures 801, as shown in Figure 18.

[0082] The step of arranging the wavelength conversion member 200 includes, for example, the step of arranging the wavelength conversion material 250 inside the multiple openings 801 and on the upper surface of the mask member 800, as shown in Figure 17. The wavelength conversion material 250 can be arranged inside the multiple openings 801 and on the upper surface of the mask member 800, for example, by a dispenser.

[0083] Furthermore, the step of arranging the wavelength conversion member 200 includes a step of curing the wavelength conversion material 250 and then removing a portion of the wavelength conversion material 250 and a portion of the mask member 800. The wavelength conversion material 250 can be cured by heating, for example. The portion of the wavelength conversion material 250 and a portion of the mask member 800 can be removed by grinding, for example. As a result, as shown in Figure 18, a wavelength conversion member 200 can be arranged in each of the multiple openings 801, separated from the wavelength conversion members 200 in the other openings 801.

[0084] After placing the wavelength conversion material 250 inside the multiple openings 801 and on the upper surface of the mask member 800, removing a portion of the wavelength conversion material 250 and a portion of the mask member 800 by grinding can reduce the height variation in the first direction Z of the upper surface 201 of the multiple wavelength conversion members 200 separated for each of the multiple light-emitting elements 100. This reduces the thickness variation of the multiple wavelength conversion members 200 and reduces the chromaticity variation of the multiple wavelength conversion members 200.

[0085] <Step of removing the mask member and the support member between the multiple light-emitting elements> The manufacturing method of the light-emitting device according to the first embodiment includes the step of removing the mask member 800 and the support member 700 between the plurality of light-emitting elements 100 after arranging the wavelength conversion member 200.

[0086] As a result, the multiple light-emitting elements 100, which were previously supported collectively by the support member 700, are separated as shown in Figure 19. The multiple light-emitting devices 1, each having a light-emitting element 100 and a wavelength conversion member 200 on the light-emitting element 100, are supported on the support substrate 602 via the support member 700 remaining between the light-emitting elements 100 and the support substrate 602, while separated from each other.

[0087] In the process of removing the mask member 800 and the support member 700 between the multiple light-emitting elements 100, the mask member 800 and the support member 700 can be removed by dry etching using the same gas. This simplifies the process compared to removing the mask member 800 and the support member 700 by separate etching processes. For example, the mask member 800 and the support member 700 can be removed consecutively by dry etching using an oxygen-containing gas. The mask member 800 is removed first, exposing the upper surface 700A of the support member 700 between the multiple light-emitting elements 100. Etching proceeds from this upper surface 700A, removing the support member 700 between the multiple light-emitting elements 100.

[0088] Alternatively, the mask member 800 may be removed by wet etching, and then the support member 700 may be removed by dry etching.

[0089] According to this embodiment, multiple wavelength conversion members 200, separated from each other, can be formed for each of the multiple light-emitting elements 100. This reduces the incidence of light emitted by the light-emitting elements 100 that are to be emitted onto the wavelength conversion members 200 on the light-emitting elements 100 that are not to be emitted when the multiple light-emitting elements 100 are individually controlled to emit light.

[0090] In the process of positioning the mask member 800, if the mask member 800 is positioned between multiple protrusions on the upper surface of the second protective film 40 on the inner region 110A of the light-emitting surface 110, then in the process of removing the mask member 800, the mask member 800 positioned between the multiple protrusions is likely to remain and not be removed. The mask member 800 remaining between the multiple protrusions may reduce the light extraction efficiency.

[0091] According to this embodiment, in the step of arranging the mask member 800 shown in Figure 16, the lower end 802A of the inner surface 802 of the mask member 800 that defines the opening 801 is positioned on the outer peripheral region 110B of the light-emitting surface 110. This prevents the mask member 800 from being positioned between multiple protrusions on the upper surface of the second protective film 40 on the inner region 110A of the light-emitting surface 110.

[0092] Furthermore, the first protective film 20 and the second protective film 40 on the upper surface 700A of the support member 700 between the multiple light-emitting elements 100 may be removed after the wavelength conversion member 200 is formed. For example, after removing the mask member 800, the second protective film 40 and the first protective film 20 on the upper surface 700A of the support member 700 can be sequentially removed by dry etching using a resist as a mask. However, in this case, the resist formed to remove the second protective film 40 and the first protective film 20 must cover a large step difference between the thick wavelength conversion member 200 (for example, 10 μm or more) and the second protective film 40 on the outer peripheral region 110B of the light-emitting surface 110, which is difficult.

[0093] As described above in this embodiment, if the second protective film 40 and the first protective film 20 are removed from the upper surface 700A of the support member 700 before forming the wavelength conversion member 200, a resist for removing the second protective film 40 and the first protective film 20 can be easily formed.

[0094] [Manufacturing method for a light-emitting device according to the second embodiment] A method for manufacturing a light-emitting device according to the second embodiment will be described with reference to Figures 20 to 22.

[0095] According to the manufacturing method of the light-emitting device according to the second embodiment, in the step of arranging the mask member 800, as shown in Figures 20 and 21, the upper end 802B of the inner surface 802 of the mask member 800 is located outside the lower end 802A of the inner surface 802 and overlaps with the outer peripheral region 110B of the light-emitting surface 110. In a cross-sectional view, the inner surface 802 is inclined such that the width of the opening 801 widens from the light-emitting element 100 toward the upper surface of the mask member 800.

[0096] In the wavelength conversion member 200 positioned in the opening 801 of the mask member 800 arranged by the manufacturing method of the light-emitting device according to the second embodiment, as shown in Figure 22, the width in cross-sectional view increases from the lower surface 202 to the upper surface 201. According to the manufacturing method of the light-emitting device according to the second embodiment, the area of ​​the upper surface 201 of the wavelength conversion member 200 can be increased while ensuring that the lower surface 202 of the wavelength conversion member 200 is not located on the outer peripheral region 110B of the light-emitting surface 110. This makes it possible to increase the light-emitting area of ​​the light-emitting device 1 while reducing chromaticity variation.

[0097] [Manufacturing method for light-emitting modules] The manufacturing method for the light-emitting module according to the embodiment may include the steps described below.

[0098] Laser light is shone onto the support member 700 from the side of the support substrate 602 that supports the multiple light-emitting devices 1 shown in Figure 19. This removes at least a portion of the support member 700 between the support substrate 602 and the light-emitting devices 1, separating the light-emitting devices 1 from the support substrate 602, and joining the upper surface 201 of the wavelength conversion member 200 in the light-emitting devices 1 to another support substrate, for example, an adhesive one. Alternatively, after joining the upper surface 201 of the wavelength conversion member 200 to another support substrate, laser light may be shone onto the support member 700 to separate the light-emitting devices 1 from the support substrate 602.

[0099] After separating the light-emitting device 1 from the support substrate 602, the support member 700 remaining on the side of the light-emitting element 100 opposite to the light-emitting surface 110 is removed as needed. This exposes the first conductive member 71 and the second conductive member 72. The support member 700 remaining on the light-emitting element 100 can be removed, for example, by dry etching.

[0100] Multiple light-emitting devices 1 are placed on the wiring board 400 shown in Figure 5 from the aforementioned separate support substrate. The first conductive member 71 and the second conductive member 72 of each light-emitting device 1 are joined to the wiring portion 402 of the wiring board 400 via a connecting member 410.

[0101] After arranging multiple light-emitting devices 1 on a wiring board 400, light-reflective members 500 are placed between adjacent light-emitting elements 100 and between adjacent wavelength conversion members 200. For example, a frame member is placed on the wiring board 400 so as to surround the area where the multiple light-emitting devices 1 are arranged, and then liquid light-reflective members 500 are supplied inside the frame member and cured.

[0102] As a comparative example, a method for manufacturing a light-emitting module can be considered, comprising the steps of: arranging a plurality of light-emitting elements on a wiring board using a chip mounter or the like; arranging a first light-reflective member between the plurality of light-emitting elements on the wiring board;, after arranging the first light-reflective member, arranging a wavelength conversion member on the light-emitting surface of each light-emitting element using a mask member having a plurality of openings located above the light-emitting surface of each light-emitting element; and removing the mask member and arranging a second light-reflective member between the plurality of wavelength conversion members. In this case, in the step of arranging a plurality of light-emitting elements on the wiring board, the pitch between the plurality of light-emitting elements tends to vary, and a misalignment between the position of the openings in the mask member and the position of the light-emitting elements tends to occur. In other words, a misalignment between the position of the wavelength conversion member placed in the opening of the mask member and the position of the light-emitting element tends to occur.

[0103] According to this embodiment, as shown in Figure 18 and other figures, a wavelength conversion member 200 is formed on the light-emitting surfaces 110 of a plurality of light-emitting elements 100 on a support substrate 602 using a mask member 800. The pitch of the portions of the light-emitting elements 100 on the support substrate 602, which are demarcated by the grooves 15 shown in Figure 6, is maintained. Since each process performed on the growth substrate 601 can be carried out with high precision, the pitch of the portions of the light-emitting elements 100 demarcated by these grooves 15 has little variation. Therefore, according to this embodiment, the wavelength conversion member 200 can be arranged on the light-emitting surfaces 110 of the light-emitting elements 100 with high precision.

[0104] Embodiments of this disclosure may include the following methods for manufacturing a light-emitting device, a light-emitting device, and a light-emitting module.

[0105] [Section 1] A step of preparing a structure having a plurality of light-emitting elements, each having a light-emitting surface, and a support member disposed at least between the plurality of light-emitting elements and supporting the plurality of light-emitting elements, A step of placing a mask member on the structure, which covers the support member between the plurality of light-emitting elements, the mask member having a plurality of openings positioned above each of the light-emitting surfaces of the plurality of light-emitting elements, with one opening positioned above each of the light-emitting surfaces; The steps include arranging wavelength conversion members in the plurality of apertures, After arranging the wavelength conversion member, the process involves removing the mask member and the support member between the plurality of light-emitting elements. A method for manufacturing a light-emitting device equipped with the necessary components. [Section 2] The step of preparing the aforementioned structure is: A method for manufacturing a light-emitting device according to claim 1, comprising the step of forming a protective film on the light-emitting surface of the plurality of light-emitting elements so that the support member is exposed. [Section 3] Each of the multiple light-emitting elements has an outer peripheral region and an inner region surrounded by the outer peripheral region in a plan view, with a surface roughness greater than that of the outer peripheral region. A method for manufacturing a light-emitting device according to item 1 or 2, wherein in the step of arranging the mask member, the lower end of the inner surface of the mask member that defines the opening is positioned on the outer peripheral region. [Section 4] The method for manufacturing a light-emitting device according to item 3, wherein, in a plan view, the upper end of the inner surface is located outside the lower end of the inner surface and overlaps with the outer peripheral region. [Section 5] The step of arranging the wavelength conversion member is: The steps include: placing a wavelength conversion material inside the plurality of openings and on the upper surface of the mask member; A step of removing a portion of the wavelength conversion material and a portion of the mask member by grinding, and arranging the wavelength conversion members, separated from the wavelength conversion members in the other openings, in each of the plurality of openings, A method for manufacturing a light-emitting device according to any one of items 1 to 4, comprising: [Section 6] A method for manufacturing a light-emitting device according to any one of claims 1 to 5, wherein in the step of removing the mask member and the support member, the mask member and the support member are removed by dry etching using the same gas. [Section 7] A light-emitting element having a light-emitting surface comprising an outer peripheral region and an inner region surrounded by the outer peripheral region in a plan view, with a surface roughness greater than that of the outer peripheral region, A wavelength conversion member arranged on the light-emitting surface, Equipped with, The lower surface of the wavelength conversion member is located on the inner region and not on the outer region of the light-emitting device. [Section 8] The wavelength conversion member further has an upper surface located on the opposite side of the lower surface, In a plan view, the outer edge of the upper surface is located outside the outer edge of the lower surface and overlaps with the outer peripheral region, as described in item 7. [Section 9] Wiring board and A plurality of light-emitting devices according to item 7 or 8 are arranged on the wiring board, with the surface of the light-emitting element opposite to the light-emitting surface facing the wiring board, A light-reflecting member is disposed between each of the light-emitting elements of the plurality of light-emitting devices and between each of the wavelength-converting members, A light-emitting module equipped with the following features.

[0106] The embodiments of this disclosure have been described above with reference to specific examples. However, this disclosure is not limited to these specific examples. All forms that a person skilled in the art can implement by appropriately modifying the design based on the embodiments described above in this disclosure also fall within the scope of this disclosure, insofar as they encompass the gist of this disclosure. Furthermore, within the scope of the idea of ​​this disclosure, a person skilled in the art can conceive of various modifications and variations, and these modifications and variations also fall within the scope of this disclosure. [Explanation of symbols]

[0107] 1-2…Light-emitting device, 10…Semiconductor structure, 11…First semiconductor layer, 12…Active layer, 13…Second semiconductor layer, 20…First protective film, 30…First reflective film, 40…Second protective film, 50…Insulating film, 61…First electrode, 62…Second electrode, 71…First conductive member, 72…Second conductive member, 80…Second reflective film, 90…Transparent conductive film, 100…Light-emitting element, 110…Light-emitting surface, 110A…Inner region, 110A1…Outer edge of inner region, 110B…Outer periphery Region, 110B1...Outer edge of the outer region, 200...Wavelength conversion member, 201...Upper surface of the wavelength conversion member, 202...Lower surface of the wavelength conversion member, 203...Side surface of the wavelength conversion member, 250...Wavelength conversion material, 300...Light-emitting module, 400...Wiring board, 401...Insulating substrate, 402...Wiring section, 410...Connecting member, 500...Light-reflective member, 600...Structure, 601...Growth substrate, 602...Support substrate, 700...Support member, 800...Mask member

Claims

1. A step of preparing a structure having a plurality of light-emitting elements, each having a light-emitting surface, and a support member disposed at least between the plurality of light-emitting elements and supporting the plurality of light-emitting elements, A step of placing a mask member on the structure, which covers the support member between the plurality of light-emitting elements, and which has a plurality of openings, each of which is positioned above the light-emitting surface of each of the plurality of light-emitting elements, with one opening positioned above each of the light-emitting surfaces; The steps include arranging wavelength conversion members in the plurality of apertures, After arranging the wavelength conversion member, the process involves removing the mask member and the support member between the plurality of light-emitting elements. A method for manufacturing a light-emitting device equipped with the necessary components.

2. The step of preparing the aforementioned structure is: A method for manufacturing a light-emitting device according to claim 1, comprising the step of forming a protective film on the light-emitting surface of the plurality of light-emitting elements so that the support member is exposed.

3. Each of the multiple light-emitting elements has an outer peripheral region and an inner region surrounded by the outer peripheral region in a plan view, with a surface roughness greater than that of the outer peripheral region. A method for manufacturing a light-emitting device according to claim 1 or 2, wherein in the step of arranging the mask member, the lower end of the inner surface of the mask member that defines the opening is positioned on the outer peripheral region.

4. The method for manufacturing a light-emitting device according to claim 3, wherein, in a plan view, the upper end of the inner surface is located outside the lower end of the inner surface and overlaps with the outer peripheral region.

5. The step of arranging the wavelength conversion member is: The steps include: placing a wavelength conversion material inside the plurality of openings and on the upper surface of the mask member; A step of removing a portion of the wavelength conversion material and a portion of the mask member by grinding, and arranging the wavelength conversion members, separated from the wavelength conversion members in the other openings, in each of the plurality of openings, A method for manufacturing a light-emitting device according to claim 1 or 2, comprising having the above characteristics.

6. A method for manufacturing a light-emitting device according to claim 1 or 2, wherein in the step of removing the mask member and the support member, the mask member and the support member are removed by dry etching using the same gas.

7. A light-emitting element having a light-emitting surface comprising an outer peripheral region and an inner region surrounded by the outer peripheral region in a plan view, with a surface roughness greater than that of the outer peripheral region, A wavelength conversion member arranged on the light-emitting surface, Equipped with, The lower surface of the wavelength conversion member is located on the inner region and not on the outer region of the light-emitting device.

8. The wavelength conversion member further has an upper surface located on the opposite side of the lower surface, The light-emitting device according to claim 7, wherein, in a plan view, the outer edge of the upper surface is located outside the outer edge of the lower surface and overlaps with the outer peripheral region.

9. Wiring board and A plurality of light-emitting devices according to claim 7, arranged on the wiring board with the surface of the light-emitting element opposite to the light-emitting surface facing the wiring board, A light-reflecting member is disposed between each of the light-emitting elements of the plurality of light-emitting devices and between each of the wavelength-converting members, A light-emitting module equipped with the following features.

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