Light-emitting device

Abstract

To provide a highly reliable, compact light-emitting device. [Solution] A light-emitting device 100 comprising a light-emitting diode chip 10 having an upper surface and a lower surface, a first metal part 21 and a second metal part 22 located below the light-emitting diode chip, and a resin part 30 located between the first metal part and the second metal part, wherein the light-emitting diode chip has a rectangular semiconductor part when viewed from below, one first connection pad provided in a region including the center of the lower surface of the semiconductor part, and two or more second connection pads provided in two or more corners of the four corners of the lower surface of the semiconductor part, the first metal part and the second metal part are exposed from the resin part on the lower surface of the light-emitting device, one first connection pad is connected to the first metal part over its entire lower surface, two or more second connection pads are connected to the second metal part, and the area of ​​one first connection pad is greater than the sum of the areas of two or more second connection pads.

Description

Technical Field

[0001] This disclosure relates to a light-emitting device.

Background Art

[0002] A light-emitting device using a solid light-emitting element such as a light-emitting diode (LED) can obtain high luminous efficiency and is small in size compared to a light bulb in which a light-emitting body such as a filament is enclosed in a glass bulb. Therefore, it is used in many devices including backlights for displays and lighting fixtures.

[0003] Patent Document 1 discloses a light-emitting device in which a light-emitting element having a positive electrode and a negative electrode on the same surface side and connected by flip-chip mounting on a pair of positive and negative leads is sealed with a sealing resin.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Non-Patent Documents

[0005]

Non-Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] As the power output of light-emitting devices increases, the heat generated from solid-state light-emitting elements such as LEDs also increases. It is known that the metals, semiconductors, and insulating resins that make up light-emitting devices each exhibit different expansion rates as their temperature rises. Non-patent document 1 shows that a hot spot appears in the center of a light-emitting diode chip connected using a flip-chip mounting. This hot spot is not only due to degradation of the light-emitting diode chip due to the temperature rise, but also because stress is generated due to the differences in the linear expansion coefficients of the components of the light-emitting device, which may cause failure in the mechanically weaker parts of the light-emitting diode chip. The embodiments described herein provide a compact light-emitting device that is highly reliable in high-power driving conditions. [Means for solving the problem]

[0007] A light-emitting device comprising a light-emitting diode chip having an upper surface and a lower surface, a first metal part and a second metal part located below the light-emitting diode chip, and a resin part located between the first metal part and the second metal part, wherein the light-emitting diode chip has a rectangular semiconductor part when viewed from below, one first connection pad provided in a region including the center of the lower surface of the semiconductor part, and two or more second connection pads provided at two or more of the four corners of the lower surface of the semiconductor part, the first metal part and the second metal part are exposed from the resin part on the lower surface of the light-emitting device, the one first connection pad is connected to the first metal part over its entire lower surface, the two or more second connection pads are connected to the second metal part, and the area of ​​the one first connection pad is greater than the sum of the areas of the two or more second connection pads. [Effects of the Invention]

[0008] This improves heat dissipation from the solid-state light-emitting element to the outside, reducing the temperature rise of the light-emitting device during high-power operation. This reduces the degradation of the solid-state light-emitting element and also reduces stress inside the light-emitting device, lowering the probability of failure due to mechanical deformation or fracture, thereby improving the reliability of the small light-emitting device. [Brief explanation of the drawing]

[0009] [Figure 1] A schematic top view of the light-emitting device according to the first embodiment. [Figure 2] A schematic side view of a light-emitting device according to the first embodiment. [Figure 3] A schematic bottom view of the light-emitting device according to the first embodiment. [Figure 4] A schematic diagram showing the IV-IV section in Figure 1. [Figure 5] A schematic diagram showing the VV cross-section in Figure 1. [Figure 6] A schematic top view of a metal component of a light-emitting device according to the first embodiment. [Figure 7] A schematic side view of a metal component of a light-emitting device according to the first embodiment. [Figure 8] A schematic bottom view of the metal component of the light-emitting device according to the first embodiment. [Figure 9] A schematic side view of the second metal part of the light-emitting device according to the first embodiment. [Figure 10] A schematic top view of the light-emitting diode chip 10 of the light-emitting device according to the first embodiment. [Figure 11] A schematic diagram of the area enclosed by the circle in Figure 5. [Figure 12] A schematic bottom view of the light-emitting diode chip 10 of the light-emitting device according to the first embodiment. [Figure 13] A schematic top view of a lead frame used in the manufacture of a light-emitting device according to the first embodiment. [Figure 14] A schematic vertical cross-sectional view showing a state in which a lead frame on which a light-emitting diode chip and a light-transmitting member are placed is sandwiched between an upper mold and a lower mold during the manufacturing of a light-emitting device according to the first embodiment. [Figure 15] A schematic top view of a plate-shaped molded product removed from the upper and lower molds during the manufacturing of a light-emitting device according to the first embodiment. [Figure 16] A schematic longitudinal cross-sectional view showing a light-emitting device, which is one of the modified embodiments of the first embodiment. [Figure 17]Schematic longitudinal sectional view showing a light-emitting device which is another modification of the first embodiment. [Figure 18] Schematic top view of the metal member of the light-emitting device according to the second embodiment. [Figure 19] Schematic top view of only the metal member and the resin part of the light-emitting device according to the second embodiment. [Figure 20] Schematic longitudinal sectional view including the diagonal line of the top surface of the light-emitting device according to the second embodiment. [Figure 21] Schematic bottom view of the light-emitting device according to the second embodiment. [Figure 22] Enlarged schematic view of the region surrounded by the circle on the right side of FIG. 21. [Figure 23] Enlarged schematic view of the region surrounded by the circle on the left side of FIG. 21. [Figure 24] Schematic bottom view of the light-emitting diode chip of the light-emitting device according to the second embodiment. [Figure 25] Schematic longitudinal sectional view including the diagonal line of the top surface of the light-emitting device according to the third embodiment. [Figure 26] Schematic top view of the metal member of the light-emitting device according to the third embodiment. [Figure 27] Schematic view showing the bottom surface of the light-emitting device according to the third embodiment. [Figure 28] Schematic view showing the XXVIII-XXVIII cross section of FIG. 27. [Figure 29] Enlarged schematic view of the region surrounded by the circle in FIG. 25. [Figure 30] Schematic bottom view of the light-emitting diode chip of the light-emitting device according to the third embodiment.

Embodiments for Carrying Out the Invention

[0010] Embodiments of the present invention will be described below. However, the light-emitting devices disclosed below are intended to embody the technical concept of the present invention, and unless otherwise specified, the present invention is not limited to the following. Furthermore, the content described in one embodiment is applicable to other embodiments and modifications. In addition, the size and positional relationships of the components shown in the drawings may be exaggerated in order to clarify the explanation. Viewing from above means viewing from the top side of the light-emitting device, and viewing from below means viewing from the bottom side of the light-emitting device. The outer surface is the outer side, the side that is visible from the outside, and the inner surface is the inner side, the side surface of a cavity, etc.

[0011] <First Embodiment> A light-emitting device 100 according to the first embodiment will be described below. As shown in Figures 1 to 3, the light-emitting device 100 has a lower surface 110, an upper surface 120 opposite to the lower surface 110, and outer surfaces 130 (130a, 130b, 130c, 130d) located between the upper surface 120 and the lower surface 110 and connecting to the upper surface 120 and the lower surface 110. If the light-emitting device 100 is rectangular in shape, the light-emitting device 100 has four outer surfaces 130. The upper surface 120 is square, and the four outer surfaces 130a, 130b, 130c, and 130d have the same shape.

[0012] The light-emitting device 100 includes a light-emitting diode chip 10 having an upper and lower surface, a metal member 20 located below the light-emitting diode chip 10, and an insulating resin part 30. The metal member 20 includes a first metal part 21, a second metal part 22, and a third metal part 23. The resin part 30 is located between the first metal part 21 and the second metal part 22, and also between the first metal part 21 and the third metal part 23. In the example shown in Figures 4 and 5, the light-emitting diode chip 10 is connected to the metal member 20, which includes the first metal part 21, the second metal part 22, and the third metal part 23, using a flip-chip mounting via a conductive junction 40. A wavelength conversion member 60 is placed on the upper surface of the light-emitting diode chip 10 via a translucent adhesive member 50, as shown in Figures 1, 4, and 5. The upper surface of the wavelength conversion member 60 becomes the light-emitting surface 140 and is included in the upper surface 120 of the light-emitting device 100. As shown in Figure 3, when viewed from below, the second metal part 22 is located to the right of the first metal part 21, and the third metal part 23 is located to the left. As shown in Figures 3 and 5, the resin part 30 is also continuously arranged to the sides of the light-emitting diode chip 10, the translucent adhesive member 50, and the wavelength conversion member 60, reaching the outer surfaces 130a, 130b, 130c, and 130d of the four light-emitting devices.

[0013] In the example shown in Figure 5, the light-emitting diode chip 10 is connected to the first metal part 21 and the second metal part 22 by crossing a resin part 30 located between the first metal part 21 and the second metal part 22, and is also connected to the first metal part 21 and the third metal part 23 by crossing a resin part 30 located between the first metal part 21 and the third metal part 23.

[0014] On the upper surface of the first metal part 21, a groove 29 is formed on the outside, in contact with a part of the outer edge of the connection surface with the light-emitting diode chip 10, as shown in Figures 4 and 6. The resin part 30 is placed in the groove 29.

[0015] As shown in Figures 5, 6, and 8, directly below the light-emitting diode chip 10, the area of ​​the bottom surface of the first metal part 21 on the opposite side of the top surface of the first metal part 21 is larger than the area of ​​the top surface of the first metal part 21. Here, a straight line drawn straight down from any point within the top surface of the first metal part 21 passes only through the interior of the first metal part 21 and reaches the bottom surface of the first metal part 21.

[0016] The metal member 20 includes a plurality of protrusions that reach the outer surface 130 of the light-emitting device. Specifically, as shown in Figures 6 to 8, the second metal part 22 is positioned to the right of the first metal part 21, and the third metal part 23 is positioned to the left of the first metal part 21, with a gap 28 in which the resin part 30 is positioned. One protrusion 21p is in contact with the first metal part 21 and reaches the outer surface 130a of the light-emitting device, and another protrusion 21p is in contact with the first metal part 21 and reaches the outer surface 130c of the light-emitting device. One protrusion 22p is in contact with the second metal part 22 and reaches the outer surface 130a of the light-emitting device, three protrusions 22p are in contact with the second metal part 22 and reach the outer surface 130b of the light-emitting device, and one protrusion 22p is in contact with the second metal part 22 and reaches the outer surface 130c of the light-emitting device. One protrusion 23p contacts the third metal part 23 and reaches the outer surface 130a of the light-emitting device, three protrusions 23p contact the third metal part 23 and reach the outer surface 130d of the light-emitting device, and one protrusion 23p contacts the third metal part 23 and reaches the outer surface 130c of the light-emitting device.

[0017] The end faces of the protrusions 21p, 22p, and 23p of the metal member 20 are exposed from the resin part 30 on the outer surface 130a of the light-emitting device, as shown in Figure 2. The outer surface 130c of the light-emitting device is parallel to the outer surface 130a of the light-emitting device and is symmetrical with respect to the plane containing the center of the light-emitting device 100. The end face of the protrusion 22p of the metal member 20 is exposed from the resin part 30 on the outer surface 130b of the light-emitting device, and the end face of the protrusion 23p of the metal member 20 is exposed from the resin part 30 on the outer surface 130d of the light-emitting device.

[0018] The lowest surfaces of the first metal part 21, the second metal part 22, and the third metal part 23 of the metal member 20 are exposed from the resin part 30 at the lower surface 110 of the light-emitting device. The areas of the lower surfaces of the second metal part 22 and the third metal part 23 that face the gap 28 are covered by the resin part 30. The upper surface of the first metal part 21 is covered by the resin part 30, except for the connection surface with the light-emitting diode chip 10. The image of the connection surface of the first metal part 21 with the light-emitting diode chip 10 projected perpendicularly onto the plane including the lower surface 110 of the light-emitting device is entirely contained within the exposed surface of the first metal part 21 at the lower surface 110 of the light-emitting device, and the projection lines of the perpendicular projection of the connection surface of the first metal part 21 with the light-emitting diode chip 10 pass only through the interior of the first metal part 21. The exposed surfaces of the first metal part 21, the second metal part 22, and the third metal part 23 on the lower surface 110 of the light-emitting device serve as external connection terminals for the light-emitting device 100 and are used for mechanical, thermal, and electrical connections with an externally provided printed circuit board. The soldering conductor corresponding to the second metal part 22 on the printed circuit board is electrically connected to the soldering conductor corresponding to the third metal part 23. When the light-emitting device 100 is driven, the second metal part 22 is at the same potential as the third metal part 23, and a potential difference equivalent to the drive voltage is generated between them and the first metal part 21.

[0019] The light-emitting diode chip 10 is a convex polygon when viewed from below, for example, a rectangle, and has a top surface and a bottom surface. In the example shown in Figure 10, the light-emitting diode chip 10 is a square when viewed from above. The light-emitting diode chip 10 has a semiconductor portion and connection pads. The semiconductor portion is a square, which is a type of rectangle, when viewed from below, and includes a single crystal substrate 11, a second conductivity type semiconductor layer 12, a multiple quantum well layer 13, a first conductivity type semiconductor layer 14, a first electrode layer 15a, a first insulating layer 17a, a second electrode layer 16, and a second insulating layer 17b. The connection pads include one first connection pad 18 and two or more second connection pads 19, and in the example shown in Figure 12, there is one first connection pad 18 and four second connection pads 19. The top surface of the light-emitting diode chip 10 is a translucent single crystal substrate 11, and holes reaching the second conductivity type semiconductor layer 12 and holes reaching the first electrode layer 15a, which will be described later, may be visible through it.

[0020] In the light-emitting diode chip 10, as shown in Figure 11, a single crystal substrate 11, a second conductivity type semiconductor layer 12, a multiple quantum well layer 13, and a first conductivity type semiconductor layer 14 are arranged in order from top to bottom. The first electrode layer 15a is provided on the lower surface of the first conductivity type semiconductor layer 14 and is electrically connected to the first conductivity type semiconductor layer 14. A hole is provided that penetrates the multiple quantum well layer 13, the first conductivity type semiconductor layer 14, and the first electrode layer 15a and reaches the second conductivity type semiconductor layer 12, and a first insulating layer 17a is provided that covers the inner surface of the hole and the lower surface of the first electrode layer 15a. The second electrode layer 16 is provided on the lower surface of the first insulating layer 17a and inside the hole that reaches the second conductivity type semiconductor layer 12, and is electrically connected to the second conductivity type semiconductor layer 12. In the region where the first connection pad 18 is provided, a hole is provided that penetrates the first insulating layer 17a and the second electrode layer 16 and reaches the first electrode layer 15a, and a second insulating layer 17b is provided that covers the inner surface of the hole and the lower surface of the second electrode layer 16. In the region where the second connection pad 19 is provided, an opening is provided in the second insulating layer 17b. One first connection pad 18 is electrically connected to the first electrode layer 15a through a hole that penetrates the first insulating layer 17a and the second electrode layer 16 and reaches the first electrode layer 15a. Two or more second connection pads 19 are electrically connected to the second electrode layer 16 through openings provided in the second insulating layer 17b. Directly above the first connection pad 18 and the four second connection pads 19 are the second conductivity type semiconductor layer 12, the multiple quantum well layer 13, the first conductivity type semiconductor layer 14, the first electrode layer 15a, the second electrode layer 16, the first insulating layer 17a, and the second insulating layer 17b.

[0021] In the example shown in Figure 12, two or more second connection pads 19 are provided, one at each of the four corners 10c of the square semiconductor portion, for a total of four. One first connection pad 18 is provided in the region including the center of the lower surface of the semiconductor portion of the light-emitting diode chip 10. The one first connection pad 18 is provided separately from the four second connection pads 19 by covering the second insulating layer 17b other than the four corners 10c of the square where the four second connection pads 19 are located, and the outer surface of the first connection pad 18 forms part of each outer surface of the light-emitting diode chip 10. When viewed from below, the outer edge of each second connection pad 19 does not reach the midpoint of each side of the square of the light-emitting diode chip 10, but the outer edge of the first connection pad 18 reaches near the midpoint of each side of the square of the light-emitting diode chip 10. The second insulating layer 17b exposed between the first connection pad 18 and each second connection pad 19 is located continuously between adjacent sides of the square. When viewed from below, the area of ​​the first connection pad 18 is larger than the sum of the areas of the four second connection pads 19.

[0022] The first connecting pad 18 is connected to the uppermost surface of the first metal part 21 via a conductive joint 40 across its entire lower surface. Here, "entire lower surface" means that there is no intentionally created gap between the first connecting pad 18 and the uppermost surface of the first metal part 21. The lower surfaces of two of the four second connecting pads 19 are connected to the uppermost surface of the second metal part 22 via a conductive joint 40, and the lower surfaces of the other two second connecting pads 19 are connected to the uppermost surface of the third metal part 23 via a conductive joint 40. A continuous resin portion 30 is arranged between the first connecting pad 18 and each of the second connecting pads 19, and between the first metal part 21 and the second metal part 22, and between the first metal part 21 and the third metal part 23.

[0023] When power is supplied during high-power operation, the light-emitting diode chip 10 generates heat and its temperature rises. When viewed from above, the temperature distribution of the light-emitting diode chip 10 is such that the temperature of the region near the center of the convex polygon, excluding the corners 10c, is higher than the temperature of the corners 10c. Here, the center of the convex polygon is the centroid when the convex polygon is considered to be a thin plate with uniform density and thickness. In the case of a regular polygon, it coincides with the centers of the inscribed and circumscribed circles, and in the case of a rectangle, it coincides with the intersection of the diagonals. On the lower surface of the region including the center of the light-emitting diode chip 10, excluding the corners 10c where two or more second connection pads 19 are located, a first connection pad 18 is provided, consisting of one continuous region with an area larger than the sum of the areas of the corners 10c, separated from the two or more second connection pads 19. When viewed from below, the first connection pad 18 exists continuously between the point where the outer surface of the first connection pad 18 coincides with a part of each outer surface of the light-emitting diode chip 10 and the center of the convex polygon. The entire lower surface of the first connection pad 18 is connected to the uppermost surface of the first metal part 21. The area of ​​the lowermost surface of the first metal part 21 directly below the light-emitting diode chip 10 is larger than the area of ​​the uppermost surface of the first metal part 21. The lowermost surface of the first metal part 21 opposite the uppermost surface becomes an external connection terminal for the light-emitting device 100. Therefore, the cross-sectional area of ​​the heat dissipation path is widened from the central region of the light-emitting diode chip 10, where the temperature tends to rise, allowing heat to be conducted to the outside via the shortest distance, improving heat dissipation. Localized temperature rise in the central region of the light-emitting diode chip 10 during high-power operation is reduced, and the temperature distribution can be made more uniform. As a result, the degradation of the light-emitting diode chip 10 due to heat is delayed, stress due to uneven temperature distribution is reduced, and the lifespan of the light-emitting diode chip 10 can be extended.

[0024] During high-power operation, the temperature of the corner 10c is lower than the temperature of the central region of the convex polygon other than the corner 10c. Since the resin part 30 between the first connection pad 18 and the second connection pad 19 is positioned closer to the corner 10c, avoiding the center of the convex polygon where the temperature is higher, the stress caused by the difference between the linear expansion coefficients of the metal member 20 and the resin part 30 is reduced. This reduces the risk of failure occurring in the mechanically weaker parts of the light-emitting diode chip 10.

[0025] Areas of mechanical weakness in the light-emitting diode chip 10 appear, for example, near boundaries where the thickness of the light-emitting diode chip 10 differs, i.e., near steps. The second conductivity type semiconductor layer 12, the multiple quantum well layer 13, the first conductivity type semiconductor layer 14, the first electrode layer 15a, and the second electrode layer 16 of the light-emitting diode chip 10 cover the entire lower surface of the single-crystal substrate 11, except for holes reaching the second conductivity type semiconductor layer 12 and holes reaching the first electrode layer 15a, so the thickness of the semiconductor portion of the light-emitting diode chip 10 is substantially uniform. Therefore, areas of mechanical weakness in the light-emitting diode chip 10 can be reduced, and the risk of deformation or fracture due to thermal stress is decreased.

[0026] An example of a method for manufacturing the light-emitting device 100 is described below. In the method for manufacturing the light-emitting device 100, a light-emitting diode chip 10 is prepared, and a lead frame 200 is prepared. Here, "preparation" means purchase or manufacture.

[0027] The light-emitting diode chip 10 is a diode chip capable of emitting ultraviolet or visible light by applying a forward voltage to its electrodes, and has a positive electrode and a negative electrode on the same side. For example, the light-emitting diode chip 10 can be manufactured by using a III-V compound semiconductor material, epitaxial growth by organometallic vapor deposition or the like on a single crystal substrate, forming a light-emitting diode wafer using conventional wafer processing methods such as photolithography, chemical vapor deposition, sputtering, and etching, and then dicing it into individual pieces. In one example, the single crystal substrate 11 of the light-emitting diode chip 10 is a sapphire single crystal substrate. The second conductivity type semiconductor layer 12, the multiple quantum well layer 13, and the first conductivity type semiconductor layer 14 contain an AlGaInN-based compound semiconductor. The first connection pad 18 and the second connection pad 19 have a gold (Au) layer on their outermost surface. In the first embodiment, the first connection pad 18, which serves as the positive electrode, and the second connection pad 19, which serves as the negative electrode, are formed simultaneously, and the thicknesses of the first connection pad 18 and the second connection pad 19 are the same. In another example, the light-emitting diode chip 10 may not include the single-crystal substrate 11. The light-emitting diode chip 10 may be manufactured or purchased.

[0028] The lead frame 200 is a thin metal plate used in semiconductor packages to support and fix semiconductor chips, such as light-emitting diode chips, and to connect them to the wiring of a printed circuit board. For example, it can be manufactured by forming openings of a predetermined shape repeatedly in a copper plate using processing methods such as punching or etching, and then forming an undercoat plating film and a plating film of silver, gold, etc. on the undercoat plating film on all or part of the outer surface by electroplating or the like. As shown in Figure 13, the lead frame 200 includes a plurality of connecting parts 220 and a plurality of islands 230 inside the outer frame 210. The plurality of connecting parts 220 and the plurality of islands 230 become a plurality of metal members 20 by cutting, which will be described later. The lead frame 200 may be manufactured or purchased.

[0029] <Die bonding> The light-emitting diode (LED) chip 10 is die-bonded to each of the multiple element mounting areas of the lead frame 200. In other words, the LED chip 10 is connected to each element mounting area of ​​the multiple islands 230 using flip-chip mounting via a conductive junction 40. The conductive junction 40 is, for example, solder made by melting and solidifying a gold-tin alloy paste. The gold-tin alloy paste is applied to each element mounting area of ​​the multiple islands 230, the LED chip 10 is placed on the applied gold-tin alloy paste using a chip mounter, and the LED chip 10 is connected to the lead frame 200 using flip-chip mounting by reflow soldering. In Figure 6, the outer edge of the area on which the LED chip 10 is placed is shown by a dotted line. In Figure 6, a portion of the outer edge of the area where the LED chip 10 will be located coincides with the edge of the groove 29 and the edge of the gap 28. The formation of grooves 29 and gaps 28 along the outer edge of the connection surface between the first metal part 21 and the light-emitting diode chip 10 contributes to the self-alignment effect during reflow processing. The self-alignment effect makes it easier to obtain accurate mounting position of the light-emitting diode chip 10 and reduces the reduction in the cross-sectional area of ​​the heat dissipation path caused by misalignment between the first connection pad 18 and the first metal part 21. Furthermore, the self-alignment effect can also contribute to reducing the misalignment between the optical axis of the light-emitting diode chip 10 and the lens when the light-emitting device 100 and an axially symmetric lens that focuses or diffuses the light emitted from the light-emitting device 100 are provided on an externally mounted printed circuit board.

[0030] A wavelength conversion member 60 is placed on the upper surface of the light-emitting diode chip 10 via a translucent adhesive member 50. The translucent adhesive member 50 can be, for example, a transparent silicone resin, and is heat-cured after the wavelength conversion member 60 is placed on it. The wavelength conversion member 60 can be, for example, a plate material made by sintering cerium-doped yttrium aluminum garnet crystal grains.

[0031] After die bonding the light-emitting diode chip 10 and placing the translucent adhesive member 50, the lead frame 200 is sandwiched between the upper mold 71 and the lower mold 72, as shown in Figure 14. A film may also be sandwiched between the lead frame 200 and the upper mold 71 or the lower mold 72. Then, for example, a white silicone molding compound is poured into the gap between the upper mold 71 and the lower mold 72 and heat-cured to form the resin part 30.

[0032] The plate-shaped molded products removed from the upper and lower molds are cut along the planned cutting lines 81 shown by dashed lines in Figure 15 to form multiple light-emitting devices 100. The multiple connecting portions 220 of the lead frame 200 are cut to become multiple protrusions 21p, 22p, and 23p, which together with the multiple islands 230 constitute multiple metal members 20. The cut surfaces become the outer surfaces 130 of the light-emitting devices 100, and the opposing outer surfaces 130 of the light-emitting devices have the same shape.

[0033] Since multiple connecting parts 220 connect multiple islands 230 vertically and horizontally, the shape of the lead frame 200 is stable, and problems such as the islands 230 lifting up during molding and the first metal part 21, second metal part 22, and third metal part 23 not being exposed on the lower surface 110 of the light-emitting device are less likely to occur. Since the connecting parts 220 have a smaller cross-sectional area than the islands 230, they are easy to cut, making it easier to mass-produce small light-emitting devices 100.

[0034] The materials described above for the light-emitting diode chip 10, lead frame 200, conductive joint 40, translucent adhesive member 50, wavelength conversion member 60, and resin part 30 are illustrative examples, and other materials can be used as appropriate. In the example shown in Figure 10, the light-emitting diode chip 10 is square when viewed from above, but since the light-emitting diode chip is cut from a wafer, any convex polygon that can fill a plane is acceptable, and it may be a triangle including an equilateral triangle or a hexagon including a regular hexagon. The conductive joint 40 may be made of solder material such as gold-tin alloy foil that has been melted and then cooled and solidified, or it may be made of sintered silver or sintered copper. Alternatively, the connection pads of the light-emitting diode chip 10 may be directly bonded to the lead frame 200 by diffusion bonding or room-temperature bonding, without using the conductive joint 40.

[0035] The above-described light-emitting device 100 and its manufacturing method are examples of the present disclosure. In one modification of the light-emitting device 100 according to the first embodiment, after preparing a lead frame 200, the lead frame 200 can be sandwiched between an upper mold and a lower mold, and a resin part 30 can be molded in the gap between the upper mold and the lower mold. A light-emitting diode chip 10 can be die-bonded to a plate-shaped molded product, a wavelength conversion member 60 can be placed on it, the outer surface of the light-emitting diode chip 10 and the sides of the wavelength conversion member 60 can be surrounded with a light-shielding member 31 such as white epoxy resin, and the product can be made into individual pieces to form a plurality of light-emitting devices 101 as shown in Figure 16.

[0036] Furthermore, in another modified light-emitting device 102, as shown in Figure 17, the outer and top surfaces of the light-emitting diode chip 10 are covered with the wavelength conversion member 60, and the light-emitting diode chip 10 and the wavelength conversion member 60 may be covered with a light-transmitting member 32 instead of a light-shielding member 31.

[0037] <Second Embodiment> The light-emitting device 103 according to the second embodiment will be described with reference to Figures 18 to 24. Components having the same function as the light-emitting device 100 according to the first embodiment will be given the same reference numerals as those used for the light-emitting device 100. Parts similar to those in the first embodiment will be omitted from the description as appropriate. The light-emitting device 103 has a square rectangular parallelepiped shape when viewed from above, and the light-emitting surface 140 is also square when viewed from above. The four outer surfaces 130a, 130b, 130c, and 130d of the light-emitting device have the same shape.

[0038] After preparing the lead frame 200, the lead frame 200 is sandwiched between an upper mold and a lower mold, each having multiple protrusions, and a resin part 30 is molded in the gap between the upper and lower molds to obtain a molded product having multiple concave surfaces capable of housing light-emitting diode chips 10 at positions corresponding to the multiple protrusions of the upper mold. The light-emitting diode chips 10 are die-bonded to a metal member 20 exposed at the bottom of the concave surface of the molded product via a conductive joint 40. After an insulating light-reflective member 33 is placed at the bottom of the concave surface, the light-emitting diode chips 10 are covered with a wavelength conversion member 60 and then with a light-transmitting member 32. Subsequently, they are cut along the planned cutting line to form multiple light-emitting devices 103.

[0039] The metal member 20 includes a first metal part 21, a second metal part 22, a third metal part 23, a fourth metal part 24, and a fifth metal part 25. As shown in Figure 18, viewed from above, the first metal part 21 is surrounded by the second metal part 22, the third metal part 23, the fourth metal part 24, and the fifth metal part 25. Two or more protrusions 21p are located on the side of the first metal part 21, two or more protrusions 22p are located on the side of the second metal part 22, two or more protrusions 23p are located on the side of the third metal part 23, two or more protrusions 24p are located on the side of the fourth metal part 24, and two or more protrusions 25p are located on the side of the fifth metal part 25.

[0040] In the second embodiment, the entire uppermost surface of the first metal part 21 becomes the connection surface with the light-emitting diode chip 10. Similarly, the entire uppermost surface of the second metal part 22, the entire uppermost surface of the third metal part 23, the entire uppermost surface of the fourth metal part 24, and the entire uppermost surface of the fifth metal part 25 also become connection surfaces with the light-emitting diode chip 10. The uppermost surfaces of the first metal part 21, the second metal part 22, the third metal part 23, the fourth metal part 24, and the fifth metal part 25 that are connected to the light-emitting diode chip 10 are exposed from the resin part 30 at the bottom of the concave surface, as shown in Figure 19. The uppermost surfaces of the first metal part 21, the second metal part 22, the third metal part 23, the fourth metal part 24, and the fifth metal part 25, which are exposed from the resin part 30, are included in the area on which the light-emitting diode chip 10 is placed, and are covered by the light-emitting diode chip 10 when viewed from above.

[0041] The uppermost surfaces of the first metal part 21, the second metal part 22, and the fourth metal part 24 are located, for example, several tens of micrometers above the upper surface covered by the resin part 30, as shown in Figure 20. The same applies to the uppermost surfaces of the third metal part 23 and the fifth metal part 25. The areas of the upper surface of the first metal part 21 facing the gap 28, the lower surface of the second metal part 22 facing the gap 28, the lower surface of the third metal part 23 facing the gap 28, the lower surface of the fourth metal part 24 facing the gap 28, and the lower surface of the fifth metal part 25 facing the gap 28 are covered by the resin part 30.

[0042] The bottom surfaces of the first metal part 21, the second metal part 22, the third metal part 23, the fourth metal part 24, and the fifth metal part 25 are exposed from the resin part 30 at the bottom surface 110 of the light-emitting device, as shown in Figure 21, and serve as external connection terminals for the light-emitting device 103. When the light-emitting device 103 is driven, for example, the second metal part 22 and the third metal part 23 are at the same potential, the fourth metal part 24 and the fifth metal part 25 are at the same potential, and a potential difference equivalent to the drive voltage is generated between the second metal part 22 and the fourth metal part 24. The first metal part 21 serves as an external connection terminal for heat dissipation and can be directly connected to an external heat sink separated from the power supply terminal.

[0043] The resin portion 30 is continuously arranged between the first metal portion 21 and the second metal portion 22, between the first metal portion 21 and the third metal portion 23, between the first metal portion 21 and the fourth metal portion 24, and between the first metal portion 21 and the fifth metal portion 25, reaching the outer surfaces 130a, 130b, 130c, and 130d of the four light-emitting devices, and forming a peripheral wall that demarcates the concave surface. The inner surface of the concave surface consists of the resin portion 30, as shown in Figure 20, and is inclined from the perpendicular line at the bottom of the concave surface.

[0044] The light-emitting diode chip 10 is, for example, square when viewed from below. The light-emitting diode chip 10 has a semiconductor portion and connection pads. The semiconductor portion is square when viewed from below and includes a single crystal substrate 11, a second conductivity type semiconductor layer 12, a multiple quantum well layer 13, a first conductivity type semiconductor layer 14, a first electrode layer 15a, a first insulating layer 17a, a dielectric multilayer film 17c, an extension electrode layer 15b, a second electrode layer 16, a second insulating layer 17b, and a third insulating layer 17d. The connection pads include one first connection pad 18 and two or more second connection pads 19, and in the example shown in Figure 24, there is one first connection pad 18 and four second connection pads 19. In the light-emitting diode chip 10, the single crystal substrate 11, the second conductivity type semiconductor layer 12, the multiple quantum well layer 13, and the first conductivity type semiconductor layer 14 are arranged in order from top to bottom of the light-emitting device 103, as shown in Figures 22 and 23. The first electrode layer 15a is provided on the lower surface of the first conductivity type semiconductor layer 14 and is electrically connected to the first conductivity type semiconductor layer 14. A dielectric multilayer film 17c and a first insulating layer 17a that reflect light generated in the multiple quantum well layer are provided on the lower surface of the first electrode layer 15a. A hole is provided that penetrates the dielectric multilayer film 17c and the first insulating layer 17a and reaches the first electrode layer 15a, and an extension electrode layer 15b is provided that covers the inner surface of the hole and the lower surface of the first insulating layer 17a. A hole is provided that penetrates the multiple quantum well layer 13, the first conductivity type semiconductor layer 14, the first electrode layer 15a, the dielectric multilayer film 17c, the first insulating layer 17a, and the extension electrode layer 15b and reaches the second conductivity type semiconductor layer 12, and a second insulating layer 17b is provided that covers the inner surface of the hole and the lower surface of the extension electrode layer 15b. The second electrode layer 16 is provided inside a hole that reaches the lower surface of the second insulating layer 17b and the second conductive semiconductor layer 12, and is electrically connected to the second conductive semiconductor layer 12. A hole is provided that penetrates the second insulating layer 17b and the second electrode layer 16 and reaches the extended electrode layer 15b, and a third insulating layer 17d is arranged to cover the inner surface of the hole and the lower surface of the second electrode layer 16.

[0045] As shown in Figures 20, 22, and 23, the entire lower surface of the first connection pad 18 is connected to the uppermost surface of the first metal part 21 via a conductive joint 40. The first metal part 21 is electrically insulated from the second electrode layer 16 by a third insulating layer 17d. Two adjacent second connection pads 19 of the four second connection pads 19 are electrically connected to the extension electrode layer 15b through holes that penetrate the third insulating layer 17d, the second electrode layer 16, and the second insulating layer 17b and reach the extension electrode layer 15b. The lower surfaces of these two adjacent second connection pads 19 are connected to the uppermost surface of the second metal part 22 and the uppermost surface of the third metal part 23, respectively (Figure 22). The other two adjacent second connection pads 19 of the four second connection pads 19 are electrically connected to the second electrode layer 16 through openings provided in the third insulating layer 17d. The lower surfaces of the other two adjacent second connection pads 19 are connected to the uppermost surface of the fourth metal part 24 and the uppermost surface of the fifth metal part 25, respectively (Figure 23). A light-reflective member 33 is positioned between the first connection pad 18 and each of the second connection pads 19. Directly above the first connection pad 18 and the four second connection pads 19 are the second conductivity type semiconductor layer 12, the multiple quantum well layer 13, the first conductivity type semiconductor layer 14, the first electrode layer 15a, the extension electrode layer 15b, and the second electrode layer 16.

[0046] As shown in Figure 24, one first connection pad 18 is provided so as to cover the third insulating layer 17d, excluding the four corners 10c of the square where the four second connection pads 19 are located, when viewed from below. Two or more second connection pads 19 are provided at each of the four corners 10c of the square, when viewed from below. The third insulating layer 17d exposed between the first connection pad 18 and each second connection pad 19 is located continuously between adjacent sides of the square. The area of ​​the first connection pad 18 is greater than the sum of the areas of the four second connection pads 19. Furthermore, the vertically projected image of the uppermost surface of the first metal part 21, which is the connection surface of the first metal part with the light-emitting diode chip 10, onto the plane including the lower surface 110 of the light-emitting device 103, is entirely contained within the lowermost surface of the first metal part 21, which is the exposed surface of the first metal part 21 on the lower surface 110 of the light-emitting device, and the projection lines of the vertical projection of the connection surface of the first metal part 21 with the light-emitting diode chip 10 pass only through the interior of the first metal part 21.

[0047] The top surfaces of the first metal part 21, the second metal part 22, the third metal part 23, the fourth metal part 24, and the fifth metal part 25 are located above the upper surfaces covered by the resin part 30, and the resin part 30 covers the upper surfaces of the first metal part 21, the second metal part 22, the third metal part 23, the fourth metal part 24, and the fifth metal part 25, except for the top surfaces of the first metal part 21, the second metal part 22, the third metal part 23, the fourth metal part 24, and the fifth metal part 25. This contributes to achieving a self-alignment effect when the light-emitting diode chip 10 is reflow-processed and flip-chip mounted. This makes it easier to obtain accuracy in the mounting position of the light-emitting diode chip 10 and reduces the reduction in the cross-sectional area of ​​the heat dissipation path due to misalignment between the first connection pad 18 and the first metal part 21. Furthermore, the self-alignment effect can also contribute to reducing the misalignment between the optical axis of the light-emitting diode chip 10 and the lens when the light-emitting device 103 and an axially symmetric lens that transmits light emitted from the light-emitting device 103 are provided on an externally mounted printed circuit board.

[0048] The structures of the light-emitting diode chip 10 and metal member 20 described above are just one example of the present disclosure, and other structures can be used as appropriate. For example, the light-emitting diode chip 10 may have three different multiple quantum well layers 13, and four second connection pads 19 may be set to different potentials, allowing current to be injected independently into the three different multiple quantum well layers 13 to cause light emission.

[0049] <Third Embodiment> A light-emitting device 104 according to the third embodiment will be described with reference to Figures 25 to 30. Components having the same function as the light-emitting device 100 according to the first embodiment will be given the same reference numerals as those used for the light-emitting device 100. Parts similar to those in the first embodiment will be omitted from the description as appropriate. The light-emitting device 104 has a square rectangular parallelepiped shape when viewed from above.

[0050] As shown in Figure 25, the light-emitting diode chip 10 of the light-emitting device 104 is connected to a metal member 20, which includes a first metal part 21 and a second metal part 22 located below it, via a conductive junction 40 using flip-chip mounting. The light-emitting diode chip 10 is connected to the uppermost surface of the first metal part 21 and the uppermost surface of the second metal part 22, straddling the insulating resin part 30 between the first metal part 21 and the second metal part 22. In the third embodiment, the entire uppermost surface of the first metal part 21 is the connection surface with the light-emitting diode chip 10. The entire uppermost surface of the second metal part 22 is also the connection surface with the light-emitting diode chip 10. The uppermost surfaces of the first metal part 21 and the uppermost surface of the second metal part 22 connected to the light-emitting diode chip 10 are located above the upper surface covered by the resin part 30 and, when viewed from above, are included in the region on which the light-emitting diode chip 10 is placed. The resin part 30 is positioned between the first metal part 21 and the second metal part 22, and covers the upper surfaces of the first metal part 21 and the second metal part 22, except for the uppermost surfaces of the first metal part 21 and the second metal part 22. The wavelength conversion member 60 is positioned to cover the light-emitting diode chip 10. Furthermore, the light-transmitting member 32 is positioned to cover the wavelength conversion member 60, and the light-shielding member 31 is positioned on the upper surface of the light-transmitting member 32.

[0051] Two or more protrusions 21p are located on the side of the first metal part 21, and two or more protrusions 22p are located on the side of the second metal part 22. Specifically, as shown in Figure 26, two protrusions 21p are in contact with the first metal part 21 and reach the outer surface 130a of the light-emitting device, two protrusions 21p are in contact with the first metal part 21 and reach the outer surface 130c of the light-emitting device, and one protrusion 21p is in contact with the first metal part 21 and reaches the outer surface 130d of the light-emitting device. One protrusion 22p is in contact with the second metal part 22 and reaches the outer surface 130a of the light-emitting device, one protrusion 22p is in contact with the second metal part 22 and reaches the outer surface 130b of the light-emitting device, and one protrusion 22p is in contact with the second metal part 22 and reaches the outer surface 130c of the light-emitting device. On the outer surfaces 130a and 130c of the light-emitting device, the end faces of the protruding portions 21p and 22p of the metal member 20 are exposed from the resin portion 30; on the outer surface 130b of the light-emitting device, the end face of the protruding portion 22p of the metal member 20 is exposed from the resin portion 30; and on the outer surface 130d of the light-emitting device, the end face of the protruding portion 21p of the metal member 20 is exposed from the resin portion 30.

[0052] As shown in Figure 27, the lowest surfaces of the first metal part 21 and the second metal part 22 of the metal member 20 are exposed from the resin part 30 at the lower surface 110 of the light-emitting device. The protrusions 21p and 22p that reach the outer surface 130d and 130b of the light-emitting device have different shapes from the other protrusions that reach the outer surfaces 130a and 130c of the light-emitting device. As shown in Figures 27 and 28, the end face of the protrusion 21p that reaches the outer surface 130d of the light-emitting device also reaches the lower surface 110 of the light-emitting device. At the outer surface 130d of the light-emitting device, the outer surface of the protrusion 21p exposed from the resin part 30 has a recess 27. The end face of the protrusion 22p that reaches the outer surface 130b of the light-emitting device also reaches the lower surface 110 of the light-emitting device near the outer surface 130b of the light-emitting device. At the outer surface 130b of the light-emitting device, the outer surface of the protrusion 22p exposed from the resin part 30 has a recess 27. The recesses 27 of the protrusion 21p and the protrusion 22p that reach the outer surface 130d of the light-emitting device do not have resin parts 30, and each recess 27 can be seen from the side and below. The lowest surfaces of the first metal part 21 and the second metal part 22 that are exposed on the lower surface 110 of the light-emitting device become external connection terminals of the light-emitting device 104. The surfaces of the first metal part 21, the second metal part 22, and the protrusions 21p and 22p that are exposed from the resin parts 30 can be soldered to an externally provided printed circuit board, and solder fillets can be formed in the recesses 27 of the protrusions 21p and 22p.

[0053] In the square-shaped light-emitting diode chip 10, viewed from below, a single crystal substrate 11, a second conductivity type semiconductor layer 12, a multiple quantum well layer 13, and a first conductivity type semiconductor layer 14 are arranged in order from top to bottom of the light-emitting device 104, as shown in Figure 29. The first electrode layer 15a is provided on the lower surface of the first conductivity type semiconductor layer 14 and is electrically connected to the first conductivity type semiconductor layer 14. A dielectric multilayer film 17c and a first insulating layer 17a that reflect light generated in the multiple quantum well layer are provided on the lower surface of the first electrode layer 15a. A hole is provided that penetrates the dielectric multilayer film 17c and the first insulating layer 17a and reaches the first electrode layer 15a, and an extension electrode layer 15b is provided that covers the inner surface of the hole and the lower surface of the first insulating layer 17a. A hole is provided that penetrates the multiple quantum well layer 13, the first conductivity type semiconductor layer 14, the first electrode layer 15a, the dielectric multilayer film 17c, the first insulating layer 17a, and the extension electrode layer 15b, reaching the second conductivity type semiconductor layer 12. A second insulating layer 17b is provided that covers the inner surface of the hole and the lower surface of the extension electrode layer 15b. The second electrode layer 16 is provided inside the hole that reaches the second conductivity type semiconductor layer 12 and the lower surface of the second insulating layer 17b, and is electrically connected to the second conductivity type semiconductor layer 12. A hole is provided that penetrates the second insulating layer 17b and the second electrode layer 16, reaching the extension electrode layer 15b, and a third insulating layer 17d is provided that covers the inner surface of the hole and the lower surface of the second electrode layer 16. The first connection pad 18 is electrically connected to the second electrode layer 16 through an opening provided in the third insulating layer 17d. The second connection pad 19 is electrically connected to the extension electrode layer 15b through a hole that penetrates the third insulating layer 17d, the second electrode layer 16, and the second insulating layer 17b, and reaches the extension electrode layer 15b. Directly above the first connection pad 18 and the two second connection pads 19 are the second conductivity type semiconductor layer 12, the multiple quantum well layer 13, the first conductivity type semiconductor layer 14, the first electrode layer 15a, the extension electrode layer 15b, and the second electrode layer 16.

[0054] The connection pad includes one first connection pad 18 and two or more second connection pads 19, and in the example shown in Figure 30, it consists of one first connection pad 18 and two second connection pads 19. As shown in Figure 30, the one first connection pad 18 is provided covering the third insulating layer 17d, except for the two adjacent corners 10c of the square where the two second connection pads 19 are located, when viewed from below, and the two second connection pads 19 are provided at the two adjacent corners 10c of the square, when viewed from below. The third insulating layer 17d exposed between the first connection pad 18 and each second connection pad 19 is located continuously between adjacent sides of the square. The area of ​​the first connection pad 18 is greater than the sum of the areas of the two second connection pads 19.

[0055] The entire lower surface of the first connection pad 18 is connected to the uppermost surface of the first metal part 21 via a conductive joint 40. The lower surfaces of the two second connection pads 19 are each connected to the uppermost surface of the second metal part 22 via a conductive joint 40. A light-reflective member 33 is positioned between the first connection pad 18 and each of the second connection pads 19. Directly below the light-emitting diode chip 10, the area of ​​the lower surface of the first metal part 21 on the opposite side of the uppermost surface of the first metal part 21 is larger than the area of ​​the uppermost surface of the first metal part 21. Furthermore, the image of the connection surface of the first metal part 21 to the light-emitting diode chip 10 projected perpendicularly onto the plane including the flat portion of the lower surface 110 of the light-emitting device 104 is entirely contained within the exposed surface of the first metal part 21 on the lower surface 110 of the light-emitting device, and the projection lines of the perpendicular projection of the connection surface of the first metal part 21 to the light-emitting diode chip 10 pass only through the interior of the first metal part 21.

[0056] The fact that the top surfaces of the first metal part 21 and the second metal part 22 are located above the upper surfaces covered by the resin part 30, and that the resin part 30 covers the upper surfaces of the first metal part 21 and the second metal part 22, except for the top surfaces of the first metal part 21 and the second metal part 22, contributes to achieving a self-alignment effect when the light-emitting diode chip 10 is reflow-processed and flip-chip mounted. This makes it easier to obtain accuracy in the mounting position of the light-emitting diode chip 10 and reduces the reduction in the cross-sectional area of ​​the heat dissipation path due to misalignment between the first connection pad 18 and the first metal part 21.

[0057] When the light-emitting device 104 is soldered to an externally mounted printed circuit board using a reflow soldering process, the recesses 27 at the ends of the first metal part 21 and the second metal part 22, which reach the outer surfaces 130b and 130d of the light-emitting device and the lower surface 110 of the light-emitting device, contribute to a self-alignment effect. The solder fillets formed between the recesses 27 at the ends of the first metal part 21 and the second metal part 22 and the printed circuit board strengthen the connection between the light-emitting device 104 and the printed circuit board.

[0058] The structures of the light-emitting diode chip 10 and metal member 20 described above are illustrative, and other structures can be used as appropriate. It is also possible to change the electrical connections between the first connection pad 18 and the second connection pad 19 and the first conductivity type semiconductor layer 14 and the second conductivity type semiconductor layer 12 to achieve other arrangements. For example, two second connection pads 19 can be provided at two non-adjacent corners 10c.

[0059] This disclosure includes the following components. (Section 1) A light-emitting device comprising a light-emitting diode chip having an upper surface and a lower surface, a first metal part and a second metal part located below the light-emitting diode chip, and a resin part located between the first metal part and the second metal part, wherein the light-emitting diode chip has a rectangular semiconductor part when viewed from below, one first connection pad provided in a region including the center of the lower surface of the semiconductor part, and two or more second connection pads provided at two or more of the four corners of the lower surface of the semiconductor part, the first metal part and the second metal part are exposed from the resin part on the lower surface of the light-emitting device, the one first connection pad is connected to the first metal part over its entire lower surface, the two or more second connection pads are connected to the second metal part, and the area of ​​the one first connection pad is greater than the sum of the areas of the two or more second connection pads. (Section 2) The light-emitting device according to item (1), wherein the outer surface of one of the first connection pads forms a part of each outer surface of the light-emitting diode chip. (Section 3) The light-emitting device according to (1) or (2), wherein the first conductivity type semiconductor layer and the second conductivity type semiconductor layer of the light-emitting diode chip are located directly above the one first connection pad and the two or more second connection pads. (Section 4) The light-emitting device according to any one of items (1) to (3), wherein the image of the connection surface of the first metal part with the light-emitting diode chip projected perpendicularly onto a plane including the lower surface of the light-emitting device is entirely contained within the exposed surface of the first metal part on the lower surface of the light-emitting device, and the projection lines of the perpendicular projection of the connection surface of the first metal part with the light-emitting diode chip pass only through the interior of the first metal part. (Section 5) A light-emitting device according to any one of items (1) to (3), wherein the upper surface of the first metal part is covered with the resin part, except for the connection surface of the first metal part with the light-emitting diode chip, and the upper surface of the second metal part is covered with the resin part, except for the connection surface of the second metal part with the light-emitting diode chip. (Section 6) The light-emitting device according to any one of (1) to (5), wherein the two or more second connection pads are located at the four corners of the lower surface of the semiconductor portion. (Section 7) The light-emitting device according to item (6), wherein the light-emitting device includes a third metal part, and the second metal part and the third metal part are arranged on both sides of the first metal part when viewed from below. (Section 8) The light-emitting device according to item (6), wherein the light-emitting device includes a third metal part, a fourth metal part, and a fifth metal part, and when viewed from above, the first metal part is surrounded by the second metal part, the third metal part, the fourth metal part, and the fifth metal part. (Section 9) The light-emitting device according to any one of the above (1) to (8), wherein the light-emitting device includes a projection on the side of the first metal part, and the outer surface of the projection has a recess on the outer surface of the light-emitting device. [Industrial applicability]

[0060] The light-emitting device according to the embodiment of this disclosure can be used as a backlight source for liquid crystal displays, a projector device, a light-emitting device, various lighting fixtures, and the like. [Explanation of Symbols]

[0061] 100, 101, 102, 103, 104... Light-emitting devices 110...Underside of the light-emitting device 120...Top view of the light-emitting device 130 (130a, 130b, 130c, 130d) ... Outer surface of the light-emitting device 140...Light exit surface 10. Light-emitting diode chips 10c...corner 11. Single crystal substrate 12. Second conductive semiconductor layer 13. Multiple quantum well layers 14. First conductive semiconductor layer 15a...First electrode layer 15b...Extended electrode layer 16...Second electrode layer 17a...First insulating layer 17b...Second insulating layer 17c... Dielectric multilayer film 17d...Third insulating layer 18. First connection pad 19. Second connection pad 200·····Lead frame 210... Outer frame 220...Connection part 230... Island 20.. Metal parts 21...1st metal part 21p...Protrusion 22...Second metal part 22p...Protrusion 23...Third metal part 23p...Protrusion 24...4th metal part 24p...Protrusion 25...5th metal part 25p...Protrusion 27...recess 28...gap 29...Groove 30... Resin part 31. Light-shielding material 32...Translucent member 33. Light-reflective material 40...Conductive joint 50...Translucent adhesive material 60-wavelength conversion component 71... Upper mold 72...Lower mold 81... Line to be cut

Claims

1. A light-emitting device comprising a light-emitting diode chip having an upper surface and a lower surface, a first metal part and a second metal part located below the light-emitting diode chip, and a resin part located between the first metal part and the second metal part, The light-emitting diode chip has a rectangular semiconductor portion when viewed from below, a first connection pad provided in a region including the center of the lower surface of the semiconductor portion, and two or more second connection pads provided at two or more of the four corners of the lower surface of the semiconductor portion. The first metal part and the second metal part are exposed from the resin part on the lower surface of the light-emitting device of the light-emitting device, The aforementioned first connecting pad is connected to the first metal part on its entire lower surface. The two or more second connecting pads are connected to the second metal part. A light-emitting device in which the area of ​​one first connection pad is greater than the sum of the areas of two or more second connection pads.

2. The light-emitting device according to claim 1, wherein the outer surface of one of the first connection pads forms a part of each outer surface of the light-emitting diode chip.

3. The light-emitting device according to claim 1, wherein the first conductivity type semiconductor layer and the second conductivity type semiconductor layer of the light-emitting diode chip are located directly above the one first connection pad and the two or more second connection pads.

4. The light-emitting device according to claim 1, wherein the image of the connection surface of the first metal part with the light-emitting diode chip projected perpendicularly onto a plane including the lower surface of the light-emitting device is entirely contained within the exposed surface of the first metal part on the lower surface of the light-emitting device, and the projection lines of the perpendicular projection of the connection surface of the first metal part with the light-emitting diode chip pass only through the interior of the first metal part.

5. Except for the connection surface of the first metal part with the light-emitting diode chip, the upper surface of the first metal part is covered with the resin part. The light-emitting device according to claim 1, wherein the upper surface of the second metal part is covered with the resin part, except for the connection surface of the second metal part with the light-emitting diode chip.

6. The light-emitting device according to claim 1, wherein the two or more second connection pads are located at the four corners of the lower surface of the semiconductor portion.

7. The light-emitting device according to claim 1, wherein the light-emitting device includes a third metal part, and the second metal part and the third metal part are arranged on both sides of the first metal part when viewed from below.

8. The light-emitting device according to claim 1, wherein the light-emitting device includes a third metal part, a fourth metal part, and a fifth metal part, and when viewed from above, the first metal part is surrounded by the second metal part, the third metal part, the fourth metal part, and the fifth metal part.

9. The light-emitting device according to claim 1, wherein the light-emitting device includes a projection on the side of the first metal part, and the outer surface of the projection has a recess on the outer surface of the light-emitting device.

Images