Electrostatic chuck, substrate support, and plasma processing apparatus

Abstract

This invention provides a technology for reducing the impedance difference between the base and the substrate and between the base and the edge ring in a substrate support. [Solution] The disclosed plasma processing apparatus comprises a substrate support. The substrate support includes a base, an electrostatic chuck, a chuck electrode, and an electrode structure. The electrostatic chuck is positioned on the base and has a central region and an annular region. The chuck electrode is positioned within the central region. The electrode structure is positioned below the chuck electrode in the central region and is electrically floating. The electrode structure includes a first electrode layer, a second electrode layer positioned below the first electrode layer, and one or more connectors connecting the first electrode layer and the second electrode layer. At least one bias power supply is electrically connected to the substrate support.

Description

Technical Field

[0001] Exemplary embodiments of the present disclosure relate to a substrate support, a plasma processing apparatus, and a method of manufacturing an electrostatic chuck.

Background Art

[0002] A plasma processing apparatus is used in plasma processing of a substrate. The plasma processing apparatus includes a chamber and a substrate support. The substrate support includes a base and an electrostatic chuck and is provided in the chamber. The electrostatic chuck is provided on the base. The electrostatic chuck includes a first region on which a substrate is placed and a second region on which an edge ring is placed. The thickness of the first region is greater than the thickness of the second region. Such a plasma processing apparatus is disclosed in Patent Document 1 below.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique for reducing the difference between the impedance between the base and the substrate and the impedance between the base and the edge ring in a substrate support.

Means for Solving the Problems

[0005] In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus comprises a plasma processing chamber, a substrate support, and at least one bias power supply. The substrate support is located within the plasma processing chamber. The substrate support includes a base, an electrostatic chuck, a chuck electrode, and an electrode structure. The electrostatic chuck is located on the base and has a central region having a substrate support surface and an annular region surrounding the central region. The thickness of the annular region is less than the thickness of the central region. The chuck electrode is located within the central region. The electrode structure is located below the chuck electrode in the central region and is electrically floating. The electrode structure includes a first electrode layer, a second electrode layer located below the first electrode layer, and one or more connectors connecting the first electrode layer and the second electrode layer. The first and second electrode layers extend across the substrate support surface in plan view. At least one bias power supply is electrically connected to the substrate support. [Effects of the Invention]

[0006] According to one exemplary embodiment, in a substrate support, it is possible to reduce the difference in impedance between the base and the substrate placed on the substrate support surface and between the base and the edge ring placed on the annular region. [Brief explanation of the drawing]

[0007] [Figure 1] This figure schematically shows a plasma processing apparatus according to one exemplary embodiment. [Figure 2] This figure schematically shows a plasma processing apparatus according to one exemplary embodiment. [Figure 3] This figure shows a substrate support according to one exemplary embodiment. [Figure 4] This figure shows a substrate support according to another exemplary embodiment. [Figure 5] This figure shows a substrate support according to yet another exemplary embodiment. [Figure 6] This figure shows a substrate support according to yet another exemplary embodiment. [Figure 7]A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 8] A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 9] A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 10] A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 11] A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 12] A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 13] A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 14] A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 15] A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 16] A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 17] A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 18] A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 19] A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 20] A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 21] A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 22] A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 23] A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 24] A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 25] A diagram showing a substrate support according to yet another exemplary embodiment. [Figure 26] FIG. is a diagram showing a substrate support according to yet another exemplary embodiment. [Figure 27] FIG. is a perspective view of an electrode structure of an example. [Figure 28] FIG. is a diagram showing a substrate support according to yet another exemplary embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. The same or corresponding parts in each drawing will be denoted by the same reference numerals.

[0009] FIGS. 1 and 2 schematically show a plasma processing apparatus according to one exemplary embodiment.

[0010] In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas discharge port for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 described later, and the gas discharge port is connected to an exhaust system 40 described later. The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0011] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron-cyclotron-resonance plasma (ECR), a helicon wave plasma (HWP), or a surface wave plasma (SWP). Various types of plasma generation units, including an AC (Alternating Current) plasma generation unit and a DC (Direct Current) plasma generation unit, may also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 200 kHz to 150 MHz.

[0012] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control operations based on a program stored in the storage unit 2a2. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0013] The following describes an example configuration of a capacitively coupled plasma processing apparatus as an example of a plasma processing apparatus 1. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a plurality of power supplies, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support 11 is located inside the plasma processing chamber 10. The shower head 13 is located above the substrate support 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support 11. The side wall 10a is grounded. The shower head 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support 11 includes a main body 11m and an edge ring 11e. The main body 11m is configured to support the substrate W and the edge ring 11e. Although not shown in the figures, the substrate support 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 16, the edge ring 11e, and the substrate W to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path. The substrate support 11 may also include a heat transfer gas supply unit configured to supply heat transfer gas to the gap between the back surface of the substrate W and the top surface of the substrate support 11.

[0015] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlet ports 13c. The shower head 13 also includes a conductive member. The conductive member of the shower head 13 functions as an upper electrode. In addition to the shower head 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0016] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas to the shower head 13 from each corresponding gas source 21 via each corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of at least one processing gas.

[0017] The plasma processing apparatus 1 has multiple power supplies, including a DC power supply used for holding the substrate W by electrostatic attraction, a high-frequency power supply used for generating plasma, and at least one bias power supply used for drawing ions from the plasma. Details of the multiple power supplies will be described later.

[0018] The exhaust system 40 may be connected to, for example, a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0019] Hereinafter, Figure 3 will be referred to in conjunction with Figures 1 and 2. Figure 3 shows a substrate support according to one exemplary embodiment. The substrate support 11A shown in Figure 3 can be used as the substrate support 11 of the plasma processing apparatus 1.

[0020] The substrate support 11A includes a base 14 and an electrostatic chuck 16A. The base 14 has a roughly disc shape. The base 14 is made of a metal such as aluminum. A high-frequency power supply 31 (RF power supply) is electrically connected to the base 14 via a matching circuit 31m. A bias power supply 32 is also electrically connected to the base 14.

[0021] The high-frequency power supply 31 is configured to generate high-frequency power RF to create plasma from gas in the chamber 10. The high-frequency power RF has a frequency in the range of 13 MHz or more and 150 MHz or less. The matching circuit 31m has a matching circuit for matching the impedance of the load of the high-frequency power supply 31 to the output impedance of the high-frequency power supply 31.

[0022] The bias power supply 32 is configured to generate bias energy BE to draw ions from the plasma to the substrate W. The bias energy BE is electrical energy and has a bias frequency in the range of 100 kHz or higher and 13.56 MHz or lower.

[0023] The bias energy BE may be high-frequency power having a bias frequency, i.e., high-frequency bias power. In this case, the bias power supply 32 is electrically connected to the base 14 via a matching circuit 32m. The matching circuit 32m has a matching circuit for matching the impedance of the load of the bias power supply 32 to the output impedance of the bias power supply 32.

[0024] Alternatively, the bias energy BE may be a periodically generated pulse of voltage. The time interval between the generated voltage pulses, i.e., the period length, is the reciprocal of the bias frequency. The voltage pulse may have negative or positive polarity. The voltage pulse may be a negative DC voltage pulse. The voltage pulse may have any waveform, such as a square wave, triangular wave, or impulse wave.

[0025] The electrostatic chuck 16A is mounted on the base 14. The electrostatic chuck 16A is fixed to the base 14 via a connecting member 15. The connecting member 15 may be an adhesive or a brazing material. The adhesive may be an adhesive containing metal.

[0026] The electrostatic chuck 16A has a main body 16m and various electrodes. The main body 16m is made of a dielectric material such as aluminum oxide or aluminum nitride and has a substantially disc shape. The various electrodes of the electrostatic chuck 16A are provided inside the main body 16m.

[0027] The electrostatic chuck 16A includes a first region 16R1 (central region) and a second region 16R2 (annular region). The first region 16R1 is the central region of the electrostatic chuck 16A and includes the central portion of the main body 16m. In plan view, the first region 16R1 is a substantially circular region. The first region 16R1 has a substrate support surface. The substrate support surface is the upper surface of the first region 16R1, and the substrate W is placed on the substrate support surface. The second region 16R2 extends circumferentially around the central axis of the electrostatic chuck 16A so as to surround the first region 16R1. The second region 16R2 includes the peripheral portion of the main body 16m. In plan view, the second region 16R2 is a ring-shaped region. The second region 16R2 has an edge ring support surface. The edge ring support surface is the upper surface of the second region 16R2, and the edge ring 11e is placed on the edge ring support surface. The thickness T1 of the first region 16R1 is greater than the thickness T2 of the second region 16R2. That is, the thickness T2 of the second region 16R2 is less than the thickness T1 of the first region 16R1. The vertical position of the upper surface of the first region 16R1 is higher than the vertical position of the second region 16R2.

[0028] The first region 16R1 is configured to hold the substrate W on which it is placed. The first region 16R1 has a chuck electrode 16a. The chuck electrode 16a is a film formed from a conductive material and is provided within the main body 16m in the first region 16R1. The chuck electrode 16a may have a substantially circular planar shape. The central axis of the chuck electrode 16a may substantially coincide with the central axis of the electrostatic chuck 16A.

[0029] A DC power supply 50p is connected to the chuck electrode 16a via a switch 50s. When a DC voltage from the DC power supply 50p is applied to the chuck electrode 16a, an electrostatic attraction is generated between the first region 16R1 and the substrate W. The substrate W is attracted to the first region 16R1 by the generated electrostatic attraction and is held by the first region 16R1.

[0030] The second region 16R2 is configured to support the edge ring 11e placed on it. The substrate W is placed on the first region 16R1 and within the region enclosed by the edge ring 11e. In one embodiment, the second region 16R2 has chuck electrodes 16b and 16c. Each of the chuck electrodes 16b and 16c is a film formed from a conductive material and is provided within the body 16m in the second region 16R2. Each of the chuck electrodes 16b and 16c may extend circumferentially around the central axis of the electrostatic chuck 16A. The chuck electrode 16c may extend outside the chuck electrode 16b.

[0031] A DC power supply 51p is connected to the chuck electrode 16b via a switch 51s. A DC power supply 52p is connected to the chuck electrode 16c via a switch 52s. When a DC voltage from the DC power supply 51p is applied to the chuck electrode 16b, and a DC voltage from the DC power supply 52p is applied to the chuck electrode 16c, an electrostatic attraction is generated between the second region 16R2 and the edge ring 11e. The edge ring 11e is attracted to the second region 16R2 by the generated electrostatic attraction and is held by the second region 16R2.

[0032] In various exemplary embodiments, the electrostatic chuck 16 of the plasma processing apparatus 1 has a portion or element (hereinafter referred to as the "adjustment unit") configured to reduce the difference between the capacitance per unit area of ​​the first region 16R1 and the capacitance per unit area of ​​the second region 16R2. The capacitance per unit area of ​​the first region 16R1 is the capacitance per unit area of ​​the first region 16R1 between the upper surface (substrate support surface) of the first region 16R1 and the base 14 (or the average value of the capacitance). The capacitance per unit area of ​​the second region 16R2 is the capacitance per unit area of ​​the second region 16R2 between the upper surface (edge ​​ring support surface) of the second region 16R2 and the base 14 (or the average value of the capacitance). The adjustment unit is provided in at least one of the first region 16R1 and the second region 16R2.

[0033] The electrostatic chuck 16A shown in Figure 3 has a portion 16pA (electrode structure) as an adjustment section. The portion 16pA is located within the main body 16m in a first region 16R1. The portion 16pA is located between the chuck electrode 16a and the lower surface of the main body 16m. That is, the portion 16pA is located below the chuck electrode 16a.

[0034] Part 16pA includes a first electrode 161 (first electrode layer), a second electrode 162 (second electrode layer), and one or more interconnectors 163 (one or more connectors). Each of the first electrode 161 and the second electrode 162 is a film formed from a conductive material. Each of the first electrode 161 and the second electrode 162 may have a substantially circular planar shape. The centers of each of the first electrode 161 and the second electrode 162 may be located on the central axis of the electrostatic chuck 16A. Furthermore, the first electrode 161 and the second electrode 162 extend across the substrate support surface in a plan view. That is, the first electrode 161 and the second electrode 162 extend across the first region 16R1 in the horizontal direction. The first electrode 161 and the second electrode 162 may extend horizontally over substantially the entire area of ​​the first region 16R1 (for example, 90% or more of the area).

[0035] The second electrode 162 extends below the first electrode 161. One or more interconnectors 163 are formed from a conductive material. Each of the one or more interconnectors 163 may be columnar in shape. One or more interconnectors 163 electrically connect the first electrode 161 and the second electrode 162 to each other. The electrostatic chuck 16A may have a plurality of interconnectors 163.

[0036] Figure 27 is a perspective view of an example electrode structure. As shown in Figure 27, the arrangement of the multiple interconnectors 163 may be axially symmetric. Furthermore, each of the multiple interconnectors 163 may be positioned at an equidistant distance from the center of the first electrode 161 or the second electrode 162, or at different distances. The multiple interconnectors 163 may also be arranged radially with respect to the center of the first electrode 161 or the second electrode 162.

[0037] Part 16pA is in an electrically floating state. In this specification, the electrically floating state of an electrode structure according to various exemplary embodiments such as Part 16pA means a state in which it is electrically floating or isolated from both the power source and the ground (earth potential), and there is little to no exchange of charge or current with the surrounding conductors, and current can flow in the object solely by electromagnetic induction.

[0038] With an electrostatic chuck having an adjustment section such as section 16pA, even if the thickness of the first region 16R1 is greater than the thickness of the second region 16R2, the difference between the capacitance per unit area of ​​the first region 16R1 and the capacitance per unit area of ​​the second region 16R2 is small. Therefore, the difference between the impedance between the base 14 and the substrate W and the impedance between the base 14 and the edge ring 11e is small. Thus, it is possible to reduce the difference between the power coupled to the plasma via the edge ring 11e and the power coupled to the plasma via the substrate W.

[0039] Furthermore, if the joining member 15 contains metal, heat transfer between the base 14 and the electrostatic chuck 16A is improved. Therefore, even if the levels of high-frequency power RF and / or bias energy BE are high, it is possible to suppress the temperature rise of the electrostatic chuck 16A, the substrate W, and the edge ring 11e.

[0040] Furthermore, since the portion 16pA is located within the first region 16R1, the capacitance of the first region 16R1 is large. Therefore, it is possible to apply a large potential difference to the sheath on the substrate W. Consequently, the power efficiency of the high-frequency power RF and bias energy BE is improved.

[0041] Furthermore, since the impedance in the first region 16R1 is small, the levels of the high-frequency power RF and / or bias energy BE can be reduced. Therefore, discharge in the flow path and gaps within the substrate support 11A through which the heat transfer gas flows is suppressed.

[0042] Furthermore, the electrostatic chuck 16A does not have electrical contacts with respect to the portion 16pA. Therefore, no localized heat generation due to electrical contacts occurs in the electrostatic chuck 16A. In another embodiment, the electrostatic chuck 16A may have a conductor portion 17 that electrically connects the portion 16pA and the base 14, as shown in Figure 3.

[0043] Refer to Figure 4 below. Figure 4 shows a substrate support according to another exemplary embodiment. The substrate support 11B shown in Figure 4 can be used as the substrate support 11 of the plasma processing apparatus 1. The differences between the substrate support 11B and the substrate support 11A will be explained below.

[0044] The electrostatic chuck 16B of the substrate support 11B differs from the electrostatic chuck 16A of the substrate support 11A in that it has bias electrodes 16e and 16f. Each of the bias electrodes 16e and 16f is a film formed from a conductive material. The bias electrode 16e is provided in the body 16m within the first region 16R1. The bias electrode 16e extends across the substrate support surface in a plan view. That is, the bias electrode 16e extends across the first region 16R1 in the horizontal direction. The bias electrode 16e is provided between the upper surface of the first region 16R1 and portion 16pA. The bias electrode 16e may also be provided between the chuck electrode 16a and portion 16pA. The planar shape of the bias electrode 16e may be substantially circular, and its center may be located on the central axis of the electrostatic chuck 16B.

[0045] The bias electrode 16f is provided within the main body 16m in the second region 16R2. The bias electrode 16f may be provided between each of the chuck electrodes 16b and 16c and the lower surface of the second region 16R2. The planar shape of the bias electrode 16f may be substantially ring-shaped, and its center may be located on the central axis of the electrostatic chuck 16B.

[0046] A bias power supply 32 (first bias power supply) is electrically connected to the bias electrode 16e. A bias power supply 33 (second bias power supply) is electrically connected to the bias electrode 16f. The bias power supply 33 is a power source that generates bias energy BE2 supplied to the bias electrode 16f. Like bias energy BE, bias energy BE2 may be high-frequency bias power, or it may be a periodically generated voltage pulse. When bias energy BE2 is high-frequency bias power, the bias power supply 33 is electrically connected to the bias electrode 16f via a matching circuit 33m.

[0047] The substrate support 11B can provide a bias energy BE with a relatively low frequency to the bias electrode 16e located near the substrate W. It can also provide a bias energy BE2 with a relatively low frequency to the bias electrode 16f located near the edge ring 11e.

[0048] Refer to Figure 5 below. Figure 5 shows a substrate support according to yet another exemplary embodiment. In the embodiment shown in Figure 5, the bias power supply 32 is electrically connected to both bias electrodes 16e and 16f, and the bias energy BE is distributed to the bias electrodes 16e and 16f. The distribution ratio of the bias energy BE between the bias electrodes 16e and 16f is adjusted by an impedance adjuster 55. The impedance adjuster 55 includes, for example, a variable capacitance capacitor. The impedance adjuster 55 is connected between the bias power supply 32 and the bias electrode 16f. Alternatively, another impedance adjuster may be connected between the bias power supply 32 and the bias electrode 16e.

[0049] Furthermore, in the embodiment shown in Figure 5, the high-frequency power supply 31 is electrically connected to the bias electrode 16f in addition to the base 14, and the high-frequency power RF is distributed between the base 14 and the bias electrode 16f. The distribution ratio of the high-frequency power RF between the base 14 and the bias electrode 16f is adjusted by an impedance adjuster 54. The impedance adjuster 54 includes, for example, a variable capacitance capacitor. The impedance adjuster 54 is connected between the high-frequency power supply 31 and the bias electrode 16f. Alternatively, another impedance adjuster may be connected between the high-frequency power supply 31 and the base 14.

[0050] As shown in Figure 5, the electrical path between the high-frequency power supply 31 and the bias electrode 16f is connected to a node on the electrical path that connects the bias power supply 32 to the bias electrode 16f. In the embodiment shown in Figure 5, a low-pass filter 56 is connected between the node and the bias power supply 32 to block or attenuate the high-frequency power RF flowing toward the bias power supply 32. The low-pass filter 56 has the characteristic of passing bias energy BE through. The low-pass filter 56 may also be connected between the node and the impedance adjuster 55. Furthermore, a low-pass filter such as the low-pass filter 56 may be connected between the bias electrode 16e and the branch node where the two electrical paths connecting the bias power supply 32 to the bias electrodes 16e and 16f, respectively, branch off from each other. Alternatively, a low-pass filter such as the low-pass filter 56 may be connected between the branch node and the bias power supply 32.

[0051] Refer to Figure 6 below. Figure 6 shows a substrate support according to yet another exemplary embodiment. In the embodiment shown in Figure 6, the bias power supply 32 is connected to the bias electrode 16e, and the bias power supply 33 is connected to the bias electrode 16f.

[0052] Furthermore, in the embodiment shown in Figure 6, the high-frequency power supply 31 is electrically connected to the bias electrode 16f in addition to the base 14, and the high-frequency power RF is distributed between the base 14 and the bias electrode 16f. The distribution ratio of the high-frequency power RF between the base 14 and the bias electrode 16f is adjusted by an impedance adjuster 57. The impedance adjuster 57 includes, for example, a variable capacitance capacitor. The impedance adjuster 57 is connected between the high-frequency power supply 31 and the bias electrode 16f. Alternatively, another impedance adjuster may be connected between the high-frequency power supply 31 and the base 14.

[0053] As shown in Figure 6, the electrical path between the high-frequency power supply 31 and the bias electrode 16f is connected to a node on the electrical path that connects the bias power supply 33 to the bias electrode 16f. In the embodiment shown in Figure 6, a high-pass filter 58 is connected between the node and the high-frequency power supply 31 to block or attenuate the bias energy BE2 flowing toward the high-frequency power supply 31. The high-pass filter 58 has the characteristic of passing high-frequency power RF. The high-pass filter 58 may also be connected between the node and the impedance adjuster 57. Furthermore, a high-pass filter such as the high-pass filter 58 may be connected between the base 14 and the branch node where the two electrical paths connecting the high-frequency power supply 31 to the base 14 and the bias electrode 16f, respectively, branch off from each other. Alternatively, a high-pass filter such as the high-pass filter 58 may be connected between the branch node and the high-frequency power supply 31.

[0054] Refer to Figure 7 below. Figure 7 shows a substrate support according to yet another exemplary embodiment. The substrate support 11C shown in Figure 7 can be used as the substrate support 11 of the plasma processing apparatus 1. The differences between the substrate support 11C and the substrate support 11B will be explained below.

[0055] The electrostatic chuck 16C of the substrate support 11C differs from the electrostatic chuck 16B of the substrate support 11B in that it further includes auxiliary electrodes 16g and 16h. Each of the auxiliary electrodes 16g and 16h is a film formed from a conductive material. The auxiliary electrode 16g is provided within the body 16m in the first region 16R1. The auxiliary electrode 16g is provided between the upper surface of the first region 16R1 and portion 16pA. The auxiliary electrode 16g may also be provided between the bias electrode 16e and portion 16pA. The planar shape of the auxiliary electrode 16g may be substantially ring-shaped, and its center may be located on the central axis of the electrostatic chuck 16C.

[0056] The auxiliary electrode 16h is provided within the main body 16m in the second region 16R2. The auxiliary electrode 16h may be provided between the bias electrode 16f and the lower surface of the second region 16R2. The planar shape of the auxiliary electrode 16h may be substantially ring-shaped, and its center may be located on the central axis of the electrostatic chuck 16C.

[0057] As shown in Figure 7, the high-frequency power supply 31 is electrically connected to the base 14 as well as to auxiliary electrodes 16g and 16h, and the high-frequency power RF is distributed to the base 14, auxiliary electrode 16g, and auxiliary electrode 16h. The distribution ratio of the high-frequency power RF to the base 14, auxiliary electrode 16g, and auxiliary electrode 16h is adjusted by impedance adjusters 59 and 60. Each of the impedance adjusters 59 and 60 includes, for example, a variable capacitance capacitor. Impedance adjuster 59 is connected between the high-frequency power supply 31 (or matching unit 31m) and auxiliary electrode 16g. Impedance adjuster 60 is connected between the high-frequency power supply 31 (or matching unit 31m) and auxiliary electrode 16h. One of the impedance adjusters 59 and 60 may be connected between the high-frequency power supply 31 (or matching unit 31m) and the base 14. Alternatively, another impedance adjuster may be connected between the high-frequency power supply 31 and the base 14.

[0058] Refer to Figure 8 below. Figure 8 shows a substrate support according to yet another exemplary embodiment. The substrate support 11D shown in Figure 8 can be used as the substrate support 11 of the plasma processing apparatus 1. The differences between the substrate support 11D and the substrate support 11C will be explained below.

[0059] The electrostatic chuck 16D of the substrate support 11D differs from the electrostatic chuck 16C of the substrate support 11C in that it does not have an auxiliary electrode 16g. As shown in Figure 8, the high-frequency power supply 31 is electrically connected to the auxiliary electrode 16h in addition to the base 14, and the high-frequency power RF is distributed to the base 14 and the auxiliary electrode 16h. The distribution ratio of the high-frequency power RF between the base 14 and the auxiliary electrode 16h is adjusted by an impedance adjuster 61. The impedance adjuster 61 includes, for example, a variable capacitance capacitor. The impedance adjuster 61 is connected between the high-frequency power supply 31 (or matching unit 31m) and the auxiliary electrode 16h. Alternatively, the impedance adjuster 61 may be connected between the high-frequency power supply 31 (or matching unit 31m) and the base 14. Or, another impedance adjuster may be connected between the high-frequency power supply 31 and the base 14.

[0060] Refer to Figure 9 below. Figure 9 shows a substrate support according to yet another exemplary embodiment. The substrate support 11E shown in Figure 9 can be used as the substrate support 11 of the plasma processing apparatus 1. The differences between the substrate support 11E and the substrate support 11A will be explained below.

[0061] The electrostatic chuck 16E of the substrate support 11E differs from the electrostatic chuck 16A of the substrate support 11A in that it has a portion 16pE (electrode structure) as an adjustment part. The portion 16pE is provided within the main body 16m in a first region 16R1. The portion 16pE may be provided between the chuck electrode 16a and the lower surface of the first region 16R1.

[0062] Part 16pE includes a first electrode 161E (first electrode layer), a second electrode 162E (second electrode layer), and one or more interconnectors 163E (one or more interconnectors). Each of the first electrode 161E and the second electrode 162E is a film formed from a conductive material. Each of the first electrode 161E and the second electrode 162E may have a substantially circular planar shape. The centers of each of the first electrode 161E and the second electrode 162E may be located on the central axis of the electrostatic chuck 16E. Furthermore, the first electrode 161E and the second electrode 162E extend across the substrate support surface in a plan view. That is, the first electrode 161E and the second electrode 162E extend across the first region 16R1 in the horizontal direction. The first electrode 161E and the second electrode 162E may extend horizontally over substantially the entire area of ​​the first region 16R1 (for example, 90% or more of the area).

[0063] The second electrode 162E extends below the first electrode 161E. One or more interconnectors 163E are formed from a conductive material. Each of the one or more interconnectors 163E may be columnar in shape. One or more interconnectors 163E electrically connect the first electrode 161E and the second electrode 162E to each other, similar to interconnector 163. The electrostatic chuck 16E may have a plurality of interconnectors 163E.

[0064] The first electrode 161E is formed such that the distance between the first electrode 161E and the upper surface of the first region 16R1 gradually decreases as the radial distance from the center of the first region 16R1 increases.

[0065] According to the electrostatic chuck 16E, the capacitance of the first region 16R1 increases with increasing radial distance from the center of the first region 16R1. Therefore, it is possible to correct the plasma density distribution, which decreases with increasing radial distance from the central axis of the electrostatic chuck 16E.

[0066] Refer to Figure 10 below. Figure 10 shows a substrate support according to yet another exemplary embodiment. The substrate support 11F shown in Figure 10 can be used as the substrate support 11 of the plasma processing apparatus 1. The differences between the substrate support 11F and the substrate support 11E will be explained below.

[0067] The electrostatic chuck 16F of the substrate support 11F differs from the electrostatic chuck 16E of the substrate support 11E in that it has a portion 16pF (electrode structure) as an adjustment part. The portion 16pF is provided within the main body 16m in a first region 16R1. The portion 16pF may be provided between the chuck electrode 16a and the lower surface of the first region 16R1.

[0068] The portion 16pF includes a first electrode 161F (first electrode layer), a second electrode 162F (second electrode layer), and one or more interconnectors 163F (one or more interconnectors). Each of the first electrode 161F and the second electrode 162F is a film formed from a conductive material. Each of the first electrode 161F and the second electrode 162F may have a substantially circular planar shape. The centers of each of the first electrode 161F and the second electrode 162F may be located on the central axis of the electrostatic chuck 16F. Furthermore, the first electrode 161F and the second electrode 162F extend across the substrate support surface in a plan view. That is, the first electrode 161F and the second electrode 162F extend across the first region 16R1 in the horizontal direction. The first electrode 161F and the second electrode 162F may extend horizontally over substantially the entire area of ​​the first region 16R1 (for example, 90% or more of the area).

[0069] The second electrode 162F extends below the first electrode 161F. One or more interconnectors 163F are formed from a conductive material. Each of the one or more interconnectors 163F may be columnar in shape. One or more interconnectors 163F electrically connect the first electrode 161F and the second electrode 162F to each other, similar to interconnector 163. The electrostatic chuck 16F may have a plurality of interconnectors 163F.

[0070] The first electrode 161F is formed such that the distance between the first electrode 161F and the upper surface of the first region 16R1 decreases in stages as the radial distance from the center of the first region 16R1 increases.

[0071] With the electrostatic chuck 16F, the capacitance of the first region 16R1 increases in steps as the radial distance from the center of the first region 16R1 increases. Therefore, it is possible to correct the plasma density distribution, which decreases as the radial distance from the central axis of the electrostatic chuck 16E increases.

[0072] Refer to Figure 11 below. Figure 11 shows a substrate support according to yet another exemplary embodiment. The substrate support 11G shown in Figure 11 can be used as the substrate support 11 of the plasma processing apparatus 1. The differences between the substrate support 11G and the substrate support 11F will be explained below.

[0073] The electrostatic chuck 16G of the substrate support 11G differs from the electrostatic chuck 16F of the substrate support 11F in that it further includes a bias electrode 16e. The bias electrode 16e is a film formed from a conductive material. The bias electrode 16e is provided within the body 16m in a first region 16R1. In plan view, the bias electrode 16e extends across the substrate support surface. That is, the bias electrode 16e extends across the first region 16R1 in the horizontal direction. The bias electrode 16e is provided between the upper surface of the first region 16R1 and portion 16pF. The planar shape of the bias electrode 16e may be substantially circular, and its center may be located on the central axis of the electrostatic chuck 16G. A bias power supply 32 is electrically connected to the bias electrode 16e.

[0074] Refer to Figure 12 below. Figure 12 shows a substrate support according to yet another exemplary embodiment. The substrate support 11H shown in Figure 12 can be used as the substrate support 11 of the plasma processing apparatus 1. The differences between the substrate support 11H and the substrate support 11F will be explained below.

[0075] The electrostatic chuck 16H of the substrate support 11H differs from the electrostatic chuck 16F of the substrate support 11F in that it has a portion 16pH (electrode structure) as an adjustment part. The portion 16pH is provided within the main body 16m in a first region 16R1. The portion 16pH may be provided between the chuck electrode 16a and the lower surface of the first region 16R1.

[0076] Part 16pH includes a first electrode 161H (first electrode layer), a second electrode 162H (second electrode layer), and one or more interconnectors 163H (one or more interconnectors). The first electrode 161H includes a plurality of films formed from a conductive material. The second electrode 162H is a film formed from a conductive material. The centers of the first electrode 161H and the second electrode 162H may be located on the central axis of the electrostatic chuck 16H. Furthermore, the first electrode 161H and the second electrode 162H extend across the substrate support surface in a plan view. That is, the first electrode 161H and the second electrode 162H extend across a first region 16R1 in the horizontal direction. The first electrode 161H and the second electrode 162H may extend across substantially the entire area (e.g., 90% or more) of the first region 16R1 in the horizontal direction.

[0077] The second electrode 162H extends below the first electrode 161H. One or more interconnectors 163H are formed from a conductive material. Each of the one or more interconnectors 163H may be columnar in shape. One or more interconnectors 163H electrically connect the first electrode 161H and the second electrode 162H to each other. The electrostatic chuck 16H may have a plurality of interconnectors 163H.

[0078] The multiple films constituting the first electrode 161H are formed such that the distance between the first electrode 161H and the upper surface of the first region 16R1 decreases in steps as the radial distance from the center of the first region 16R1 increases. That is, the multiple films provide a stepped upper surface for the first electrode 161H.

[0079] With the electrostatic chuck 16H, the capacitance of the first region 16R1 increases in steps as the radial distance from the center of the first region 16R1 increases. Therefore, it is possible to correct the plasma density distribution, which decreases as the radial distance from the central axis of the electrostatic chuck 16H increases.

[0080] Refer to Figure 13 below. Figure 13 shows a substrate support according to yet another exemplary embodiment. The substrate support 11J shown in Figure 13 can be used as the substrate support 11 of the plasma processing apparatus 1. The differences between the substrate support 11J and the substrate support 11A will be explained below.

[0081] The electrostatic chuck 16J of the substrate support 11J differs from the electrostatic chuck 16A of the substrate support 11A in that it has a portion 16pJ (electrode structure) as an adjustment part. The portion 16pJ is provided within the main body 16m in a first region 16R1. The portion 16pJ may be provided between the chuck electrode 16a and the base 14.

[0082] Part 16pJ includes an electrode 161J and one or more interconnectors 163J (one or more interconnectors). The electrode 161J is a film formed from a conductive material. The planar shape of the electrode 161J may be substantially circular. The center of the electrode 161J may be located on the central axis of the electrostatic chuck 16J. The electrode 161J also extends across the substrate support surface in a plan view. That is, the electrode 161J extends across the first region 16R1 in the horizontal direction. The electrode 161J may extend across substantially the entire area of ​​the first region 16R1 in the horizontal direction (e.g., 90% or more of the area).

[0083] One or more interconnectors 163J are formed from a conductive material. Each of the one or more interconnectors 163J may be columnar in shape. The one or more interconnectors 163J electrically connect the electrode 161J and the upper surface of the base 14 to each other. The electrostatic chuck 16J may have a plurality of interconnectors 163J. From the viewpoint of preventing discharge and / or heat generation, the plurality of interconnectors 163J may be evenly arranged in an annular, concentric, or grid pattern when viewed from above the substrate support 11J.

[0084] Refer to Figure 14 below. Figure 14 shows a substrate support according to yet another exemplary embodiment. The substrate support 11K shown in Figure 14 can be used as the substrate support 11 of the plasma processing apparatus 1. The differences between the substrate support 11K and the substrate support 11A will be explained below.

[0085] The electrostatic chuck 16K of the substrate support 11K differs from the electrostatic chuck 16A of the substrate support 11A in that it has a portion 16pK as an adjustment part. The portion 16pK is provided within the main body 16m in a first region 16R1. The portion 16pK may be provided between the chuck electrode 16a and the base 14.

[0086] The portion 16pK is a conductive plate formed from a metal such as aluminum. The portion 16pK may have a substantially disc shape. The central axis of the portion 16pK may substantially coincide with the central axis of the electrostatic chuck 16K. The portion 16pK may have the largest thickness among all the conductive parts within the first region 16R1. A joining member similar to the joining member 15 may be interposed between the portion 16pK and the main body 16m. Furthermore, the portion 16pK may be integrated with the base 14.

[0087] Refer to Figure 15 below. Figure 15 shows a substrate support according to yet another exemplary embodiment. The substrate support 11L shown in Figure 15 can be used as the substrate support 11 of the plasma processing apparatus 1. The differences between the substrate support 11L and the substrate support 11A will be explained below.

[0088] The electrostatic chuck 16L of the substrate support 11L differs from the electrostatic chuck 16A of the substrate support 11A in that it has a portion 16pL as an adjustment part. The portion 16pL constitutes part of the first region 16R1 and is provided within the main body 16m within the first region 16R1. The portion 16pL may be provided between the chuck electrode 16a and the base 14. The portion 16pL may have a substantially disc shape. The central axis of the portion 16pL may substantially coincide with the central axis of the electrostatic chuck 16L. The portion 16pL is formed from a metal matrix composite material, i.e., a composite material of ceramic and metal.

[0089] Refer to Figure 16 below. Figure 16 shows a substrate support according to yet another exemplary embodiment. The substrate support 11M shown in Figure 16 can be used as the substrate support 11 of the plasma processing apparatus 1. The differences between the substrate support 11M and the substrate support 11L will be explained below.

[0090] The electrostatic chuck 16M of the substrate support 11M differs from the electrostatic chuck 16L of the substrate support 11L in that it has a portion 16pM as an adjustment part. The portion 16pM constitutes part of the first region 16R1 and is provided within the main body 16m within the first region 16R1. The portion 16pM may be provided between the chuck electrode 16a and the base 14. The portion 16pM may have a substantially disc shape. The central axis of the portion 16pM may substantially coincide with the central axis of the electrostatic chuck 16M.

[0091] The portion 16pM is formed from a material having a dielectric constant higher than that of the dielectric material of the main body 16m constituting the second region 16R2. For example, the portion 16pM is formed from zirconia, hafnium oxide, barium magnesium niobate, or barium neodymium titanate.

[0092] Refer to Figure 17 below. Figure 17 shows a substrate support according to yet another exemplary embodiment. The substrate support 11N shown in Figure 17 can be used as the substrate support 11 of the plasma processing apparatus 1. The differences between the substrate support 11N and the substrate support 11M will be explained below.

[0093] The electrostatic chuck 16N of the substrate support 11N differs from the electrostatic chuck 16M of the substrate support 11M in that it has a portion 16pN as an adjustment part. The portion 16pN constitutes substantially the entirety of the first region 16R1. That is, the portion 16pN constitutes the part of the first region 16R1 excluding the chuck electrode 16a. The portion 16pN is formed from the same material as the material constituting the portion 16pM.

[0094] Refer to Figure 18 below. Figure 18 shows a substrate support according to yet another exemplary embodiment. The substrate support 11P shown in Figure 18 can be used as the substrate support 11 of the plasma processing apparatus 1. The differences between the substrate support 11P and the substrate support 11A will be explained below.

[0095] The electrostatic chuck 16P of the substrate support 11P includes a portion 16pP as an adjustment section. The portion 16pP is one or more cavities located within the main body 16m in a second region 16R2. The one or more cavities constituting the portion 16pP may extend circumferentially with respect to the central axis of the electrostatic chuck 16P or be arranged along the circumferential direction. One or more cavities constituting the portion 16pP may be filled with a material having a dielectric constant lower than that of the main body 16m. The first region 16R1 may also provide one or more cavities.

[0096] Refer to Figure 19 below. Figure 19 shows a substrate support according to yet another exemplary embodiment. The substrate support 11Q shown in Figure 19 can be used as the substrate support 11 of the plasma processing apparatus 1. The differences between the substrate support 11Q and the substrate support 11A will be explained below.

[0097] The substrate support 11Q differs from the substrate support 11A in that it includes a base 14Q instead of a base 14. The base 14Q includes a base 14b (insulating material), a first electrode film 141, and a second electrode film 142. The base 14b is formed from an insulator such as SiC and has a substantially disc shape. The first electrode film 141 is provided below the first region 16R1 and on the upper surface of the base 14b. The second electrode film 142 is provided below the second region 16R2 and on the upper surface of the base 14b.

[0098] As shown in Figure 19, the high-frequency power supply 31 and the bias power supply 32 (first bias power supply) are connected to the first electrode film 141. In one embodiment, the high-frequency power supply 31 and the bias power supply 32 may be connected to the first electrode film 141 via the electrode film 143 and wiring 144. The electrode film 143 is formed below the first region 16R1 and on the lower surface of the base 14b. The electrode film 143 is connected to the first electrode film 141 via wiring 144. The wiring 144 may be vias formed in the base 14b. The first electrode film 141 may also be formed on the bottom surface of the electrostatic chuck 16A in the first region 16R1, and may be configured to be powered there via wiring 144.

[0099] The bias power supply 33 (second bias power supply) is connected to the second electrode film 142. In one embodiment, the bias power supply 33 may be connected to the second electrode film 142 via the electrode film 145 and wiring 146. The electrode film 145 is formed below the second region 16R2 and on the lower surface of the base 14b. The electrode film 145 is connected to the second electrode film 142 via wiring 146. The wiring 146 may be vias formed in the base 14b. The second electrode film 142 may also be formed on the bottom surface of the electrostatic chuck 16A in the second region 16R2, and may be configured to be powered there via wiring 146.

[0100] The high-frequency power supply 31 is further connected to the second electrode film 142. The electrical path extending between the high-frequency power supply 31 and the second electrode film 142 is connected to a node on the electrical path that connects the bias power supply 32 to the second electrode film 142. A high-pass filter 70 is connected between this node and the high-frequency power supply 31. The high-pass filter 70 has the characteristic of blocking or attenuating the bias energy BE2 flowing toward the high-frequency power supply 31 and allowing the high-frequency power RF to pass through.

[0101] Refer to Figure 20 below. Figure 20 shows a substrate support according to yet another exemplary embodiment. The differences between the embodiment shown in Figure 20 and the embodiment shown in Figure 19 will be described below.

[0102] In the embodiment shown in Figure 20, the high-frequency power supply 31 is not electrically connected to the second electrode film 142, but is electrically connected to the first electrode film 141 (or electrode film 143) together with the bias power supply 32. A low-pass filter 32L is connected between the first electrode film 141 and the bias power supply 32. The low-pass filter 32L has the characteristic of blocking or attenuating the high-frequency power RF and passing the bias energy BE2.

[0103] In the embodiment shown in Figure 20, a high-frequency power supply 34 is electrically connected to the second electrode film 142 (or electrode film 145) together with a bias power supply 33. The high-frequency power supply 34 is configured to generate a high-frequency power RF2 similar to the high-frequency power RF. The high-frequency power supply 34 is electrically connected to the second electrode film 142 via a matching circuit 34m. The matching circuit 34m has a matching circuit for matching the impedance of the load of the high-frequency power supply 34 to the output impedance of the high-frequency power supply 34.

[0104] In the embodiment shown in Figure 20, the bias power supply 33 is electrically connected to the second electrode film 142 via a low-pass filter 33L. The low-pass filter 33L is connected between the bias power supply 33 and a node where two electrical paths connecting the high-frequency power supply 34 and the bias power supply 33 to the second electrode film 142, respectively, converge.

[0105] Refer to Figure 21 below. Figure 21 shows a substrate support according to yet another exemplary embodiment. The differences between the embodiment shown in Figure 21 and the embodiment shown in Figure 20 will be described below.

[0106] In the embodiment shown in Figure 21, the high-frequency power supply 34 is not used. In the embodiment shown in Figure 21, the high-frequency power supply 31 and the bias power supply 32 are electrically connected to the first electrode film 141 (or electrode film 143). Furthermore, the high-frequency power supply 31 is electrically connected to the second electrode film 142 (or electrode film 145). The high-frequency power supply 31 is electrically connected to the second electrode film 142 via an impedance adjuster 31i and a high-pass filter 31H. In addition, the high-frequency power supply 31 and the bias power supply 32 are electrically connected to the first electrode film 141 via a capacitor 31c. The impedance adjuster 31i and the high-pass filter 31H are connected between the second electrode film 142 and a branch node where two electrical paths connecting the high-frequency power supply 31 to the first electrode film 141 and the second electrode film 142, respectively, branch off from each other. The capacitor 31c is electrically connected between the branch node and the first electrode film 141.

[0107] The high-pass filter 31H has the characteristic of blocking or attenuating the bias energy BE and allowing the high-frequency power RF to pass through. The impedance adjuster 31i has a variable impedance. The impedance adjuster 31i may include, for example, a variable capacitance capacitor. The distribution ratio of the high-frequency power RF between the first electrode film 141 and the second electrode film 142 is adjusted by adjusting the impedance of the impedance adjuster 31i.

[0108] Refer to Figure 22 below. Figure 22 shows a substrate support according to yet another exemplary embodiment. The differences between the embodiment shown in Figure 22 and the embodiment shown in Figure 21 will be described below.

[0109] In the embodiment shown in Figure 22, the bias power supply 33 and the high-pass filter 31H are not used. The high-frequency power supply 31 and the bias power supply 32 are electrically connected to the first electrode film 141 and the second electrode film 142. The impedance adjuster 31i is connected between the branch node and the second electrode film 142 (or electrode film 145). The branch node is a node where the electrical path connecting the high-frequency power supply 31 and the bias power supply 32 to the first electrode film 141 and the electrical path connecting the high-frequency power supply 31 and the bias power supply 32 to the second electrode film 142 are branched from each other. In the embodiment shown in Figure 22, the distribution ratio of the high-frequency power RF and bias energy BE between the first electrode film 141 and the second electrode film 142 is adjusted by adjusting the impedance of the impedance adjuster 31i.

[0110] The following refers to Figures 23 to 25. Each of Figures 23 to 25 shows a substrate support according to yet another exemplary embodiment. The differences between the embodiment shown in Figure 23 and the embodiment shown in Figure 4 will be described below. The differences between the embodiment shown in Figure 24 and the embodiment shown in Figure 5 will also be described. The differences between the embodiment shown in Figure 25 and the embodiment shown in Figure 6 will also be described.

[0111] In the embodiments shown in Figures 23 to 25, the electrostatic chuck does not have a bias electrode 16e. The portion 16pA is located below and near the chuck electrode 16a. The bias power supply 32 is electrically connected to the portion 16pA. In the embodiments shown in Figures 23 to 25, since the bias electrode 16e is not provided, the structure of the electrostatic chuck is simpler.

[0112] Refer to Figure 28 below. Figure 28 shows a substrate support according to yet another exemplary embodiment. The substrate support 11R shown in Figure 28 can be used as the substrate support 11 of the plasma processing apparatus 1. The differences between the substrate support 11R and the substrate support 11J shown in Figure 13 will be explained below.

[0113] In the substrate support 11R, a space 16s is formed within the body 16m of the electrostatic chuck 16J. The space 16s is a continuous cavity. The space 16s may also be formed between the electrode 161J and the lower surface of the body 16m.

[0114] A heat transfer gas supply source (not shown) may be connected to space 16s. The heat transfer gas (e.g., He gas) from the heat transfer gas supply source may be supplied to the back side of the substrate W through space 16s and a supply port (not shown).

[0115] Alternatively, a heat transfer medium (such as Garden®) may be supplied to the space 16s to regulate the temperature of the electrostatic chuck 16J. In this case, the heat transfer medium is circulated between a heat transfer medium supply device (not shown) and the space 16s.

[0116] The electrostatic chucks of the substrate support according to the various exemplary embodiments described above can be manufactured by the manufacturing method described below. In this manufacturing method, a plurality of green sheets that will later constitute the electrostatic chuck are laminated. Then, the laminated plurality of green sheets are sintered. This allows for the manufacture of an electrostatic chuck.

[0117] Although various exemplary embodiments have been described above, the invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and modifications may be made. Furthermore, it is possible to combine elements from different embodiments to form other embodiments.

[0118] For example, as shown in Figure 26, the second region 16R2 does not have to have chuck electrodes 16b and 16c. Also, in the embodiments shown in Figures 3 to 8, any of the portions 16pE, 16pF, 16pH, 16pJ, 16pK, 16pL, 16pM, and 16pN may be used instead of portion 16pA. Furthermore, the base 14Q may be used in place of the base of the substrate support in various embodiments other than the substrate support 11Q.

[0119] Herein, various exemplary embodiments included in this disclosure are described in [E1] to [E20] below.

[0120] [E1] Base and, An electrostatic chuck provided on the base, Equipped with, The electrostatic chuck is, A first region configured to hold a substrate placed thereon, A second region extends around the first region and is configured to support an edge ring placed on it, Includes, The thickness of the first region is greater than the thickness of the second region. The electrostatic chuck is a portion configured to reduce the difference between the capacitance per unit area of ​​the first region between the upper surface of the first region and the base and the capacitance per unit area of ​​the second region between the upper surface of the second region and the base, and having such portion provided in at least one of the first region and the second region. Board support.

[0121] In an electrostatic chuck having the above-described portion, the thickness of the first region is greater than the thickness of the second region, but the difference between the capacitance per unit area of ​​the first region and the capacitance per unit area of ​​the second region is small. Therefore, in a substrate support, it is possible to reduce the difference between the impedance between the base and the substrate and the impedance between the base and the edge ring.

[0122] [E2] The aforementioned portion is provided within the first region, The first electrode and A second electrode extending below the first electrode, An interconnector that electrically connects the aforementioned first electrode and the aforementioned second electrode, including, The substrate support described in [E1].

[0123] [E3] The substrate support according to [E2], wherein the first electrode is provided such that the distance between the first electrode and the upper surface of the first region decreases in steps or gradually in proportion to the increasing radial distance from the center of the first region.

[0124] [E4] The aforementioned portion includes a conductive plate provided within the first region, as described in [E1].

[0125] [E5] The aforementioned portion is provided within the first region and is formed of a metal matrix composite material, as described in [E1].

[0126] [E6] The substrate support according to [E1], wherein the portion is provided in or constitutes the first region and is formed of a material having a dielectric constant higher than that of the dielectric material constituting the second region.

[0127] [E7] The substrate support according to [E1], wherein the aforementioned portion provides a cavity in the second region.

[0128] [E8] The base is a substrate support according to any one of items [E1] to [E7], and is made of metal.

[0129] [E9] The base includes an upper surface formed from metal, The aforementioned portion is located within the first region, Electrodes and, An interconnector that electrically connects the electrode and the upper surface of the base, including, The substrate support described in [E1].

[0130] [E10] The aforementioned base is, A base formed from an insulator, A first electrode film provided below the first region and on the upper surface of the base, A second electrode film provided below the second region and on the upper surface of the base, A substrate support, including any one of the items in [E1] to [E7].

[0131] [E11] The electrostatic chuck further includes a bias electrode provided therein, according to any one of items [E1] to [E10].

[0132] [E12] The substrate support according to [E11], wherein the bias electrode is provided in the first region between the upper surface of the first region and the portion thereof.

[0133] [E13] The substrate support according to [E12], wherein the electrostatic chuck further includes another bias electrode provided in the second region.

[0134] [E14] Chamber and, A substrate support provided within the chamber, as described in any one of items [E1] to [E13], A high-frequency power supply configured to generate high-frequency power to generate plasma from gas in the chamber, The substrate support is provided with a bias power supply configured to generate bias energy in order to draw ions from the plasma, Equipped with, A plasma processing apparatus in which at least one of the high-frequency power and the bias energy is supplied via the base.

[0135] [E15] The substrate support is the substrate support described in [E8], At least one of the high-frequency power supply and the bias power supply is electrically connected to the base of the substrate support. The plasma processing apparatus described in [E14].

[0136] [E16] The plasma processing apparatus according to [E15], wherein both the high-frequency power supply and the bias power supply are electrically connected to the base.

[0137] [E17] The substrate support is the substrate support described in [E10], The high-frequency power supply is electrically connected to the first electrode film and the second electrode film. The bias power supply is electrically connected to the first electrode film. The system further comprises another bias power supply electrically connected to the second electrode film, The plasma processing apparatus described in [E14].

[0138] [E18] The substrate support is the substrate support described in [E11] or [E12], The bias power supply is electrically connected to the bias electrode. The plasma processing apparatus described in [E14].

[0139] [E19] The substrate support is the substrate support described in [E13], The bias power supply is electrically connected to the bias electrode provided within the first region. The bias power supply or another bias power supply is electrically connected to the other bias electrode provided in the second region. The plasma processing apparatus described in [E14].

[0140] [E20] A method for manufacturing an electrostatic chuck for a substrate support described in any one of items [E1] to [E13], The process of stacking multiple green sheets, A step of sintering the stacked plurality of green sheets, A manufacturing method that includes this.

[0141] From the above description, it will be understood that the various embodiments of this disclosure are described herein for illustrative purposes and can be modified in various ways without departing from the scope and spirit of this disclosure. Accordingly, the various embodiments disclosed herein are not intended to limit the scope and spirit, and the true scope and spirit are shown by the appended claims. [Explanation of Symbols]

[0142] 1...Plasma processing apparatus, 10...Chamber, 11...Substrate support, W...Substrate, 11e...Edge ring, 14...Base, 16...Electrostatic chuck, 16R1...First region, 16R2...Second region, 16pA...Part, 31...High-frequency power supply, 32...Bias power supply.

Claims

1. Plasma processing chamber and This is a substrate support placed inside the plasma processing chamber, Base and, An electrostatic chuck is placed on the base and has a central region having a substrate support surface and an annular region surrounding the central region, wherein the thickness of the annular region is smaller than the thickness of the central region. A chuck electrode is positioned within the central region, An electrode structure is positioned below the chuck electrode in the central region and is electrically floating, the electrode structure includes a first electrode layer, a second electrode layer positioned below the first electrode layer, and one or more connectors connecting the first electrode layer and the second electrode layer, the first electrode layer and the second electrode layer extending across the substrate support surface in a plan view, the electrode structure and The substrate support includes, RF power supply and At least one bias power supply, Equipped with, The RF power supply and / or at least one bias power supply are electrically connected to the base. Plasma processing equipment.

2. The plasma processing apparatus according to claim 1, wherein the first electrode layer and the second electrode layer extend over substantially the entire surface of the substrate support surface in a plan view.

3. The plasma processing apparatus according to claim 1 or claim 2, wherein the first electrode layer is arranged such that the distance between the first electrode layer and the substrate support surface decreases in steps or gradually in accordance with the increase in the radial distance from the center of the central region.

4. The aforementioned base is, Insulating material, A first electrode film is disposed below the central region and on the insulating member, A second electrode film is disposed below the annular region and on the insulating member, A plasma processing apparatus according to claim 1 or claim 2, comprising:

5. The at least one bias power supply includes a first bias power supply and a second bias power supply, The first bias power supply is electrically connected to the first electrode film. The aforementioned second bias power supply is electrically connected to the aforementioned second electrode film. The plasma processing apparatus according to claim 4.

6. The plasma processing apparatus according to claim 1 or claim 2, further comprising a bias electrode disposed within the central region and extending across the substrate support surface in a plan view.

7. The plasma processing apparatus according to claim 6, wherein the bias electrode is disposed between the chuck electrode and the electrode structure.

8. The plasma processing apparatus according to claim 7, wherein the at least one bias power supply is electrically connected to the bias electrode.

9. The plasma apparatus according to claim 6, further comprising another bias electrode disposed within the annular region.

10. The plasma processing apparatus according to claim 9, wherein the at least one bias power supply is electrically connected to the bias electrode and the other bias electrode.

11. The at least one bias power supply includes a first bias power supply and a second bias power supply, The first bias power supply is electrically connected to the bias electrode, The second bias power supply is electrically connected to the other bias electrode. The plasma processing apparatus according to claim 9.

12. The plasma processing apparatus according to claim 1, wherein the base is formed of metal.

13. The plasma processing apparatus according to claim 12, wherein the RF power supply and the at least one bias power supply are electrically connected to the base.

14. The system further comprises a bias electrode positioned within the annular region, The at least one bias power supply is electrically connected to the bias electrode. The plasma processing apparatus according to claim 1 or 2.

15. Base and, An electrostatic chuck having a central region with a substrate support surface and an annular region surrounding the central region, wherein the thickness of the annular region is smaller than the thickness of the central region, A chuck electrode is positioned within the central region, An electrode structure is positioned below the chuck electrode in the central region and is electrically floating, the electrode structure includes a first electrode layer, a second electrode layer positioned below the first electrode layer, and one or more connectors connecting the first electrode layer and the second electrode layer, the first electrode layer and the second electrode layer extending across the substrate support surface in a plan view, the electrode structure and A substrate support equipped with the following features.

16. Plasma processing chamber and This is a substrate support placed inside the plasma processing chamber, Base and, An electrostatic chuck is placed on the base and has a central region having a substrate support surface and an annular region surrounding the central region, wherein the thickness of the annular region is smaller than the thickness of the central region. A chuck electrode is positioned within the central region, An electrode structure disposed below the chuck electrode in the central region, the electrode structure comprising a first electrode layer extending across the substrate support surface in a plan view, and one or more connectors that electrically connect the first electrode layer and the base, The substrate support includes, At least one power supply electrically connected to the base, A plasma processing apparatus equipped with the following features.

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