Semiconductor devices, radiation detectors, radiation imaging devices

Abstract

The present invention provides a semiconductor device capable of suppressing the occurrence of image artifacts caused by metal. [Solution] A semiconductor device in which pixels, each comprising a switch element and a conversion element, are arranged in a two-dimensional matrix, wherein the semiconductor device comprises at least a first pixel and a second pixel adjacent thereto, and the protective layer of the switch element comprises a metal near a predetermined electrode of each of the first pixel and the second pixel, and the metal in the first pixel is electrically isolated from the metal in the second pixel.

Description

Technical Field

[0001] The present invention relates to a semiconductor device. This semiconductor device can be used in, in addition to a radiation detector, an imaging sensor, a display, and the like. The radiation detector can be mounted on a medical or industrial radiation imaging device and used.

Background Art

[0002] There is known a sensor substrate in which pixels having a conversion element such as a PIN diode or a switch element such as a thin film transistor (TFT) are formed in a two-dimensional matrix. An imaging device (flat panel detector) that combines a scintillator, a drive circuit, and a readout circuit with such a sensor substrate and is used as a two-dimensional X-ray detector has become widespread. Such an imaging device is used not only for medical purposes for image diagnosis but also for industrial purposes such as inspection of electronic components and inspection of piping.

[0003] On the other hand, in the manufacturing process of a sensor substrate using thin film semiconductor manufacturing technology, defective pixels having defects in the conversion element or TFT may occur due to foreign matter contamination or process failures.

[0004] Patent Document 1 discloses a repair (laser repair) technique for suppressing the occurrence of artifacts in a radiation image by electrically disconnecting a defective pixel and a signal wiring.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] Incidentally, the inventors of this invention conducted thorough research and discovered that when manufacturing a sensor substrate with a specific structure, metal is formed when material from one layer flows into the voids of material from another layer. Furthermore, it was confirmed that when this metal is exposed due to repair processing of the sensor substrate, it causes linear image artifacts in the radiation image.

[0007] In view of the above issues, the present invention aims to provide a semiconductor device capable of suppressing the generation of image artifacts caused by metal. [Means for solving the problem]

[0008] A semiconductor device in which pixels, each comprising a switch element and a conversion element, are arranged in a two-dimensional matrix, wherein the semiconductor device comprises at least a first pixel and a second pixel adjacent thereto, and the protective layer of the switch element comprises a protective layer having metal residue near a predetermined electrode of each of the first pixel and the second pixel, wherein the metal residue in the first pixel is electrically isolated from the metal residue in the second pixel. [Effects of the Invention]

[0009] According to the present invention, a semiconductor device capable of suppressing the occurrence of image artifacts caused by metals can be provided. [Brief explanation of the drawing]

[0010] [Figure 1] This is a diagram showing the configuration of a radiation imaging system. [Figure 2] This diagram shows the configuration of a radiation imaging device. [Figure 3] Figure 3(a) shows the equivalent circuit of the sensor substrate. Figure 3(b) shows the structure of the pixel. [Figure 4] Figure 4(a) is a plan view showing an overview of the pixels. Figure 4(b) is a view of the A-A' cross section of Figure 4(a). Figure 4(c) is a view of the B-B' cross section of Figure 4(a). [Figure 5] Figure 5(a) illustrates the first step in sensor substrate manufacturing. Figure 5(b) illustrates the second step in sensor substrate manufacturing. Figure 5(c) illustrates the third step in sensor substrate manufacturing. Figure 5(d) illustrates the fourth step in sensor substrate manufacturing. Figure 5(e) illustrates the fifth step in sensor substrate manufacturing. Figure 5(f) illustrates the sixth step in sensor substrate manufacturing. Figure 5(g) illustrates the seventh step in sensor substrate manufacturing. [Figure 6] Figure 6(a) is a schematic plan view showing the shape of the metal residue. Figure 6(b) is a view of the A-A' cross-section in Figure 6(a). [Figure 7] Figure 7(a) is a plan view illustrating the location of the laser repair. Figure 7(b) is a cross-section of A-A'. Figure 7(c) is a diagram showing the equivalent circuit of the pixel. [Figure 8] Figure 8(a) shows the equivalent circuit of the signal line before processing. Figure 8(b) shows the equivalent circuit of the signal line after processing. [Figure 9] This figure shows a plan view and a cross-sectional view of a pixel. [Figure 10] This figure shows an explanatory diagram of the laser repair process and an equivalent circuit diagram of a pixel. [Figure 11] Figure 11(a) is a plan view showing an overview of the pixels. Figure 11(b) is a cross-section of A-A' in Figure 11(a). Figure 11(c) is a cross-section of B-B' in Figure 4(a). [Figure 12] Figure 12(a) is a plan view illustrating the location of the laser repair. Figure 12(b) is a cross-section of A-A'. Figure 12(c) is a diagram showing the equivalent circuit of the pixel. [Figure 13] This figure shows a radiographic image that exhibits image artifacts. [Modes for carrying out the invention]

[0011] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that the invention according to the claims is not limited to the configurations described in the embodiments. Modifications such as replacing or omitting a part of the configuration or a part of the processing with an equivalent may be made within the range where the same effects can be obtained.

[0012] (Example 1) <Radiation imaging system> A radiation imaging system 1, which is the usage environment of a radiation imaging device 3 (radiation imaging device, radiation imaging apparatus), will be described. FIG. 1 is a diagram showing the configuration of the radiation imaging system.

[0013] The radiation imaging system 1 includes a radiation generation device 2 (2a, 2b), a radiation imaging device 3 (3a, 3b), a control device 4, an operation unit 5, a display unit 6, and an external service 8 (RIS 8a, PACS 8b, HIS 8c).

[0014] The control device 4 is a device that relays each device that can be connected via the radiation imaging device 3, the radiation generation device, and the network 7 and performs various controls. The control device 4 controls radiation imaging using the radiation imaging device 3 and the radiation generation device 2.

[0015] The radiation generation device 2 (radiation irradiation device) includes a radiation tube that generates radiation, and irradiates radiation to a subject such as a patient. Here, not only X-rays but also α-rays, β-rays, γ-rays, particle beams, cosmic rays, etc. are included in the radiation. The radiation generation device 2a and the radiation generation device 2b are selected and used as appropriate according to the imaging content. When there is no particular preference, these are collectively referred to as the radiation generation device 2.

[0016] The radiation imaging device 3 (radiation imaging device, radiation imaging apparatus) is a device that generates an image based on the radiation irradiated from the radiation generation device 2. The radiation imaging device 3 is, for example, a flat panel detector. The radiation imaging device 3a and the radiation imaging device 3b are selected and used as appropriate according to the imaging content. When there is no particular preference, these are collectively referred to as the radiation imaging device 3.

[0017] The radiation imaging device 3 detects the radiation emitted from the radiation generator 2 and passed through the subject, and outputs image data corresponding to the radiation. Note that image data can also be referred to as medical images or radiation images.

[0018] The display unit 6 is a display device equipped with a monitor such as a liquid crystal display. The operation unit 5 is an input device equipped with a keyboard, a pointing device (e.g., a mouse), a touch panel, etc.

[0019] RIS8a, PACS8b, and HIS8c are external services that extend various functions related to radiography by coordinating with the control unit 4 via a network. The control unit 4 is also connected to RIS8a, PACS8b, and HIS8c via network 7, allowing for the exchange of radiographic images, patient information, etc. Figure 1 shows the radiographic imaging system 1 as including all of RIS8a, PACS8b, and HIS8c; however, the system may not include at least some of these components. Here, RIS stands for Radiology Information Systems. PACS stands for Picture Archiving and Communication Systems. HIS stands for Hospital Information Systems.

[0020] <Radiation imaging device> Figure 2 shows the configuration of the radiation imaging device. The radiation imaging device 3 includes a sensor board 10 (radiation detection panel, radiation detector), a readout circuit 11, a drive circuit 12, a power supply unit 13, a control unit 14, and a communication interface 19.

[0021] The sensor substrate 10 is a semiconductor circuit having multiple pixels (pixel matrix) arranged in a two-dimensional matrix (array) such that it constitutes multiple rows and multiple columns. The sensor substrate 10 can be either a direct conversion type panel that directly detects radiation, or an indirect conversion type panel that converts radiation into light and then converts the converted light into electric charge. In the case of an indirect detection type panel, a scintillator layer (not shown) is provided facing multiple pixels. Then, a signal charge corresponding to the visible light emitted by the scintillator layer (phosphor layer) upon incidence of radiation is generated in the conversion element.

[0022] The drive circuit 12 is configured to supply a drive signal to the pixel to be driven according to a control signal from the control unit 14.

[0023] The readout circuit 11 is a circuit configured to read signals from multiple pixels.

[0024] The signals read from the pixels are converted into a radiographic image and supplied to the control unit 14.

[0025] The control unit 14 is a controller that controls the drive circuit 12 and the read circuit 11 based on information from the read circuit 11. The control unit 14 comprehensively controls the radiation imaging device 3. The control unit 14 includes a CPU as an arithmetic processing circuit and ROM and RAM as memory. For example, the control unit 14 loads a program stored in ROM into RAM, and the CPU executes this program to realize various controls. Note that the control unit 14 may use an MPU or ASIC instead of a CPU as its arithmetic processing circuit.

[0026] Communication I / F19 is a communication interface for communicating with external devices. Wired LAN (IEEE802.3), wireless LAN (IEEE802.11), etc., are used for communication.

[0027] <Sensor Panel> Figure 3(a) shows the equivalent circuit of the sensor substrate. Figure 3(b) shows the structure of the pixel.

[0028] Figure 4(a) is a plan view showing an overview of the pixels. Figure 4(b) is a view of the A-A' cross section of Figure 4(a). Figure 4(c) is a view of the B-B' cross section of Figure 4(a).

[0029] As shown in Figure 3(a), pixels 20, each having a conversion element 30 and a TFT 31, are arranged in a two-dimensional matrix on the surface of the sensor substrate 10.

[0030] As shown in Figure 3(b), the conversion element 30 has a lower electrode 110, an n+-doped a-Si layer 111, an intrinsic a-Si layer 112, a p+-doped a-Si layer 113, and an upper electrode 114. The TFT 31 is a switching element. The TFT 31 also has a source electrode 105, a gate electrode 101, a drain electrode 106, and an oxide semiconductor layer (channel layer) 103. In this embodiment, the conversion element 30 is a PIN-type photodiode formed of amorphous silicon (a-Si), but other materials and element structures may be used.

[0031] In each of the pixels 20, the lower electrode 110 is connected to the drain electrode 106 of the same pixel. On the other hand, in each of the pixels 20, the upper electrode 114 is commonly connected to the bias line 42 for each row.

[0032] The sensor substrate 10 is supplied with a bias line potential Vbias and a signal line potential Vsig from the power supply unit 13, and a bias voltage is applied to the conversion element 30. By utilizing the potential difference between the bias line potential Vbias and the signal line potential Vsig, photoelectric conversion is performed in the intrinsic a-Si layer 112. The sensor substrate 10 has gate lines 40 extending in the x direction (row direction) and signal lines 41 extending in the y direction (column direction). The drive circuit 12 sequentially drives the gate lines, causing the TFT 31 of each pixel to conduct. As a result, the signal charge accumulated in the conversion element 30 is transferred to the readout circuit 11. The readout circuit 11 is connected to the signal lines 41 and measures the amount of signal charge from each pixel by means of an integral amplifier or the like. The measurement results are transferred to the control unit 14. The control unit 14 performs two-dimensional imaging of the signal charge amount and image correction. In other words, the control unit 14 acquires a radiation image based on the signal information obtained from the readout circuit 11.

[0033] The pixel 20 may have a TFT light-shielding layer 35 that prevents light from entering the oxide semiconductor layer (channel layer) 103 in order to prevent malfunction or degradation of the TFT 31. As shown in Figure 4(b), in this embodiment, the TFT 31 has an inverse staggered structure, and the TFT light-shielding layer 35 is provided on top of the TFT 31. The TFT light-shielding layer 35 may be a conductive layer formed integrally with the bias line 42.

[0034] <Occurrence of image artifacts> Through diligent investigation by the inventors of this application, it was confirmed that when a repair process is applied to a sensor substrate with a specific structure, linear (vertical lines, black lines) image artifacts, as shown in Figure 13, are generated. Figure 13 shows a radiation image in which image artifacts have occurred. As shown in Figure 13, radiation images in which image artifacts have occurred were confirmed in pixels in the same column as the laser-repaired pixels, that is, in pixels connected to the same signal line. As a result of diligent investigation by the inventors into this phenomenon, it was found that this artifact occurs under the following conditions.

[0035] (1) Metal residue is generated near the source electrode of the TFT.

[0036] (2) In a defective pixel, laser repair is performed on the vicinity of metal residue near a predetermined electrode (source electrode), causing the metal residue to couple with the external potential and form a parasitic capacitance with respect to the signal line.

[0037] (3) When the imaging device is operated at high speed, differences in the transient response of the signal lines occur between the laser-repaired row and the other rows, causing vertical lines to appear in the readout image.

[0038] In (1) above, regarding the definition of which of the source electrode and drain electrode in a TFT is the source electrode, for simplicity's sake, in this specification, the "side connected to the signal line" will be defined as the source electrode.

[0039] The method for reducing the parasitic capacity described in (2) above will be explained in detail later.

[0040] As described in (3) above, operating the imaging device at a high frame rate makes it more likely to produce image defects in the readout image. For example, high resolution and high frame rate are required for endovascular surgery and electronic component inspection applications. For the above applications, oxide TFTs using oxide semiconductors in the channel layer are suitable as TFTs.

[0041] <Generation of metal residue> The process by which metal residue is generated near the source electrode of an oxide TFT is described below. Figures 5(a) to 5(g) show an example of the manufacturing process of a sensor substrate. In the process shown in Figure 5(a), a metal layer is deposited and patterned on an insulating substrate 100 to form the gate electrode 101. Then, a gate insulating layer 102 is deposited, and an oxide semiconductor layer is deposited and patterned on top of it to form a channel layer 103. In the subsequent process shown in Figure 5(b), a metal layer 104, which will become the source electrode and drain electrode, is deposited on the channel layer 103. Known metal materials such as aluminum alloys and their laminated materials can be used for the metal layer 104. In the process shown in Figure 5(c), the metal layer 104 is etched by a known method to form the source electrode 105 and drain electrode 106. Depending on the etching conditions, the taper angles of the ends of the source electrode 105 and drain electrode 106 will be approximately vertical. In the process shown in Figure 5(d), a TFT protective layer 107 is deposited on the source electrode 105, drain electrode 106, and channel layer 103. Subsequently, the TFT protective layer 107 is etched to form contact holes 108 in the TFT protective layer 107 on the drain electrode 106. An inorganic insulating film produced by chemical vapor deposition (CVD) or the like is used as the TFT protective layer 107. In order to ensure the properties of the oxide TFT, there are constraints on the material and deposition conditions of the TFT protective layer 107. As a result, the substrate coverage and film thickness uniformity of the protective layer 107 may not be sufficiently improved near the ends of the source electrode 105 and drain electrode 106. In this case, voids 50 such as grooves and constrictions are created on the surface of the protective layer 107. In the process shown in Figure 5(e), a metal layer 109, which will be the lower electrode of the conversion element, is deposited on the TFT protective layer 107. At this time, a part of the metal layer 109 enters the voids 50. In the process shown in Figure 5(f), the metal layer 109 is patterned by etching to form the lower electrode 110. A portion of the metal layer 109 that has entered the void 50 is not removed by etching and becomes metal residue 51.

[0042] The shape of the metal residue 51 will now be described. Figure 6(a) is a schematic plan view showing the shape of the metal residue in Figure 5(f). Figure 6(b) is a view of the A-A' cross-section in Figure 6(a). In plan view, the metal residue 51 has a shape that completely surrounds the source electrode 105 and the drain electrode 106, respectively. The distance between the source electrode 105 or the drain electrode 106 and the metal residue 51 depends on the original shape of the gap 50, but is approximately several tens of nanometers to several micrometers (for example, 50 nm to 1 μm). The metal residue 51 on the drain electrode side is at the same potential as the lower electrode 110, while the metal residue 51 on the source electrode side is at a floating potential and is not electrically connected to other electrodes.

[0043] In the process shown in Figure 5(g), an n+-doped a-Si layer 111, an intrinsic a-Si layer 112, and a p+-doped a-Si layer 113 are sequentially deposited on the lower electrode 110 by CVD. A transparent conductive film such as ITO is then deposited and patterned on top of this to form the upper electrode 114, and the a-Si layers 111 to 113 are further patterned to form the conversion element 30. Subsequently, an inorganic insulating film is deposited by CVD to form the conversion element protective layer 115, and a planarization layer 116 is formed and patterned on top of this to form contact holes 117. Furthermore, the conversion element protective layer 115 and the TFT protective layer 107 at the bottom of the contact holes 117 are etched to expose the source electrode 105, and contact holes 118 are also provided in the conversion element protective layer 115 on the upper electrode 114. After that, a metal layer is deposited and patterned to form signal lines 41 and bias lines 42. The signal line 41 is electrically connected to the source electrode 105 via the contact hole 117, and the bias line 42 is electrically connected to the upper electrode 114 via the contact hole 118. A protective layer 120 made of an insulating film may be provided on top of this.

[0044] <Parasite volume formation by laser repair> As shown below, when the vicinity of the metal residue 51 in a defective pixel 21 is laser repaired, the metal residue 51 couples with the external potential and forms a parasitic capacitance with respect to the signal line. Figure 7(a) is a plan view illustrating the location of the laser repair. Figure 7(b) is a view of the A-A' cross section. As shown in Figure 7(a), since the metal residue 51 is generated around the source electrode 105, the metal residue 51 is separated for each pixel (it is not interconnected between different pixels). In other words, when viewed from the radiation incident side, the metal residue located within the region of the first pixel is separated from the metal residue located within the region of the adjacent second pixel. Prior to the laser repair process, the sensor substrate is inspected to identify the location of the defective pixel 21. In the laser repair process, a laser beam is shone from above onto the area of ​​the defective pixel 21 that includes at least a portion of the source electrode 105 (removal area 200), and the removal area 200 is removed by ablation, separating (cutting) the defective pixel 21 from the signal line 41. It is desirable that the position and size of the removal area 200 be set to ensure a sufficient distance from other conductive materials such as wiring. However, in high-resolution sensor substrates, the removal area 200 may be close to the bias line 42 (TFT light-shielding layer 35). Specifically, in sensor substrates with a pixel pitch of approximately 100 μm or less, the distance between the removal area 200 and the bias line 42 may be approximately 2 μm or less. Figure 7(c) shows the equivalent circuit of a pixel. As described above, when removing the removal area 200 adjacent to the TFT light-shielding layer 35, a high-resistance conductive path (leak path) may be created between the metal residue 51 and the TFT light-shielding layer 35 due to scattered metal and other debris. That is, the metal residue 51 is connected to the bias line 42 via the resistance Rr of the conductive path. Also, as shown in Figure 5(f), since the metal residue 51 and the source electrode 105 (at the same potential as the signal line 41) are facing each other, a parasitic capacitance Cr is formed with respect to the signal line.

[0045] <Equivalent circuit of a signal line> Figures 8(a) and 8(b) are used to compare the equivalent circuit diagrams of signal lines with and without laser repair holes. Figure 8(a) shows the equivalent circuit of a signal line before processing. Figure 8(b) shows the equivalent circuit of a signal line after processing. If no laser repair is performed on pixels connected to a signal line, the signal line will only have capacitance Csig, which is caused by intersections with other wiring, as shown in Figure 8(a). On the other hand, if laser repair is performed on any of the pixels connected to a signal line, the equivalent circuit of the signal line will have Csig plus Cr and Rr, as shown in Figure 8(b). The magnitudes of Cr and Rr vary depending on the number of pixels and method of laser repair, as well as the pixel structure.

[0046] When the imaging device is operated at high speed, differences in the transient response of the signal lines occur between the laser-repaired column and the other columns, which may cause vertical lines to appear in the readout image depending on the magnitudes of Cr and Rr. However, this embodiment has the following differences compared to Comparative Example 1, which will be described later, so that the parasitic capacitance Cr can be significantly reduced compared to Comparative Example 1, and vertical lines can be effectively suppressed.

[0047] (a) By forming the signal lines on separate layers from the source and drain electrodes of the TFT, the metal residue of each pixel is electrically isolated from each other.

[0048] (b) The signal lines are spaced vertically relative to the metal residue.

[0049] Regarding (b), the greater the separation distance, the greater the effect, but a certain effect can be obtained if the signal line is in a layer at a different height from the metal residue. The signal line may be in an upper or lower layer relative to the metal residue. Also, the signal line may be in an upper, same, or lower layer relative to a conductive layer such as the TFT light-shielding layer 35.

[0050] (Comparative Example 1) Figure 9(a) is a plan view showing an overhead view of the pixels in Comparative Example 1, and corresponds to Figure 4(a). Figure 9(b) is a view of the A-A' cross section of Figure 9(a). Figure 9(c) is a view of the B-B' cross section of Figure 9(a).

[0051] The difference from Example 1 is that the signal line 41 and the source electrode 105 are integrally formed by the same layer (metal layer 104). Similar to the principle shown in Figure 5(f) of Example 1, a portion of the metal layer 109 that has entered the void 50 becomes metal residue 51. Figures 10(a) and 10(b) illustrate the laser repair process, corresponding to Figures 7(a) and 7(b), respectively. As shown in Figure 10(a), the metal residue 51 is interconnected between multiple adjacent pixels in the column direction, forming a long, extended shape along the signal line 41. Figure 10(c) is an equivalent circuit diagram of the defective pixel 21 after the laser repair process. Similar to Example 1, the metal residue 51 is connected to the bias line 42 via an insulating resistor Rr, forming a parasitic capacitance Cr with respect to the signal line.

[0052] The equivalent circuit diagram of the signal line with and without laser repair holes is the same as in Figure 7 of Example 1. However, in this comparative example, the parasitic capacitance Cr becomes a significant amount (several pF) compared to the capacitance Csig of the signal line itself (several tens of pF). As a result, very strong vertical lines appear in the rows where laser repair was performed in the readout image.

[0053] (Example 2) Next, Example 2 will be described. Example 2 differs from Example 1 in that the ~TFT and conversion elements are stacked in the vertical direction. The configuration of Example 2 is basically the same as that of Example 1, except for the parts related to the characteristic features described above. Therefore, similar components are denoted by the same reference numerals, and their detailed explanations are omitted.

[0054] Below is another example of an imaging device. Figure 11(a) is a plan view showing an overview of the pixels. Figure 11(b) is a view of the A-A' cross section of Figure 11(a). Figure 11(c) is a view of the B-B' cross section of Figure 11(a).

[0055] To increase the pixel aperture ratio compared to Example 1, a planarization layer 130 is inserted between the TFT protective layer 107 and the lower electrode 110, and the TFT and conversion element are stacked vertically in each pixel. Metal layers 60 and 61 may be inserted between the planarization layer 130 and the TFT protective layer 107 for purposes such as improving the connection reliability of the contact holes 108 and 117. In this case, as in Example 1, metal residue is generated near the source electrode 105 of the TFT. Also, as in Example 1, by laser repairing the vicinity of the metal residue 51 in the defective pixel 21, the metal residue 51 couples with the external potential and forms parasitic capacitance with respect to the signal line. Figure 12(a) is a plan view illustrating the location of the laser repair. Figure 12(b) is a view of the A-A' cross section. Figure 12(c) is a view of the equivalent circuit of the pixel. As shown in Figure 12(a), the metal residue 51 generated around the source electrode 105 is separated for each pixel. In the laser repair process, laser light is irradiated from above onto the removal area 200 in Figure 12(a), and the defective pixel 21 is separated from the signal line 41 in the same manner as in Example 1. At this time, a leak path is created between the metal residue 51 and the upper electrode 114. Since the upper electrode 114 is connected to the bias line 42, the metal residue 51 is connected to the bias line 42 via a resistor Rr. Similar to Example 1, the metal residue 51 forms a parasitic capacitance Cr with respect to the signal line 41. As a result, the equivalent circuit diagram of the signal line 41 connected to the defective pixel 21 is the same as in Figure 8(b). When the imaging device is operated at high speed, the same degree of vertical line suppression effect as in Example 1 can be obtained in this embodiment as well.

[0056] (Other examples) The present invention is not limited to the above embodiments, and various modifications (including organic combinations of each embodiment) are possible based on the spirit of the invention, and these are not excluded from the scope of the invention. For example, configurations located between or around the multiple embodiments may also be included in the scope of the invention.

[0057] A processor or circuit may include a central processing unit (CPU), a microprocessing unit (MPU), a graphics processing unit (GPU), an application-specific integrated circuit (ASIC), or a field-programmable gateway (FPGA). It may also include a digital signal processor (DSP), a dataflow processor (DFP), or a neural processing unit (NPU).

[0058] (Note) The disclosure of this embodiment includes the following:

[0059] [Note 1] A semiconductor device in which pixels, each comprising a switch element and a conversion element, are arranged in a two-dimensional matrix, wherein the semiconductor device comprises at least a first pixel and a second pixel adjacent thereto, The protective layer of the switch element comprises a protective layer having metal residue near a predetermined electrode of each of the first and second pixels, A semiconductor device characterized in that the metal residue in the first pixel is electrically isolated from the metal residue in the second pixel.

[0060] [Note 2] In a radiation detector in which pixels, each comprising a switch element and a conversion element, are arranged in a two-dimensional matrix, and the pixels include at least a first pixel and a second pixel adjacent thereto, A protective layer covering the switch element, the protective layer having metal residue near a predetermined electrode of each of the switch elements of the first pixel and the second pixel, A radiation detector characterized in that the metal residue in the first pixel is electrically isolated from the metal residue in the second pixel.

[0061] [Note 3] A conductive layer connected to the power supply, A signal line extending in a direction along the alignment direction of the first and second pixels, comprising a signal line for electrically connecting to the predetermined electrode, The radiation detector according to Appendix 2, characterized in that the first pixel has a predetermined electrode that is cut off from the signal line by a laser repair hole provided near the conductive layer and the metal residue.

[0062] [Note 4] The radiation detector according to Appendix 3, characterized in that the signal line is electrically connected to the predetermined electrode via a contact hole provided in the insulating layer.

[0063] [Note 5] Equipped with a phosphor layer that converts radiation into visible light, The radiation detector according to Appendix 3, characterized in that the conductive layer functions as a light-shielding layer that blocks visible light between the phosphor layer and the switch element or the conversion element.

[0064] [Note 6] The radiation detector according to any one of the appendices 3 to 5, characterized in that the conductive layer is electrically connected to the conversion element and a bias voltage is applied.

[0065] [Note 7] The radiation detector according to any one of the appendices 3 to 6, characterized in that the signal line is provided in a layer above the layer on which the switch element is provided.

[0066] [Note 8] The radiation detector according to any one of the appendices 3 to 6, characterized in that the signal line is provided in the same layer as the conductive layer.

[0067] [Note 9] The radiation detector according to any one of the appendices 3 to 6, characterized in that the signal line is provided in a layer above the conductive layer.

[0068] [Note 10] The radiation detector according to any one of the appendices 3 to 6, characterized in that the signal line is provided below the conductive layer and above the switch element.

[0069] [Note 11] The aforementioned switch element comprises a source electrode, a drain electrode, and a gate electrode. Having a gate wire connected to the gate electrode, The radiation detector according to any one of the appendices 3 to 6, characterized in that the signal line is provided in the layer between the layer on which the source electrode and the drain electrode are provided and the layer on which the gate line is provided.

[0070] [Note 12] The aforementioned switch element comprises a source electrode, a drain electrode, and a gate electrode. Having a gate wire connected to the gate electrode, The radiation detector according to any one of the appendices 3 to 6, characterized in that the signal line is provided in a layer lower than the layer in which the gate line is provided.

[0071] [Note 13] The radiation detector according to any one of the appendices 3 to 6, characterized in that the switching element is a TFT (Thin Film Transistor) made of an oxide semiconductor.

[0072] [Note 14] The radiation detector according to any one of the appendices 1 to 13, characterized in that the predetermined electrode is the source electrode of the switch element.

[0073] [Note 15] A radiation imaging device equipped with a radiation detector as described in any one of the appendices 1 to 14. [Explanation of Symbols]

[0074] 1. Radiation imaging system 3. Radiation imaging device 10 Sensor board 11 Readout circuit 12 Drive Circuit 13 Power supply section 14 Control Unit 20 pixels 21 defective pixels 30 conversion elements 31 TFT (Twitch Transformer) 35 TFT light shielding layer 40 Gate Line 41 signal line 42 Bias line 50 void 51 Metal residue 200 removal area Csig signal line capacitance Cr parasitic capacitance Rr Resistance of the conductive path

Claims

1. A semiconductor device in which pixels, each comprising a switch element and a conversion element, are arranged in a two-dimensional matrix, wherein the semiconductor device comprises at least a first pixel and a second pixel adjacent thereto, The protective layer of the switch element comprises a protective layer with metal near a predetermined electrode of each of the first and second pixels, A semiconductor device characterized in that the metal in the first pixel is electrically isolated from the metal in the second pixel.

2. In a radiation detector in which pixels, each comprising a switch element and a conversion element, are arranged in a two-dimensional matrix, and the pixels include at least a first pixel and a second pixel adjacent thereto, A protective layer covering the switch element, the protective layer having metal near a predetermined electrode of each of the switch elements of the first pixel and the second pixel, A radiation detector characterized in that the metal in the first pixel is electrically isolated from the metal in the second pixel.

3. A conductive layer connected to the power supply, A signal line extending in a direction along the alignment direction of the first and second pixels, comprising a signal line for electrically connecting to the predetermined electrode, The radiation detector according to claim 2, characterized in that the first pixel has a predetermined electrode that is cut off from the signal line by a laser repair hole provided near the conductive layer and the metal.

4. The radiation detector according to claim 3, characterized in that the signal line is electrically connected to the predetermined electrode via a contact hole provided in the insulating layer.

5. Equipped with a phosphor layer that converts radiation into visible light, The radiation detector according to claim 3, characterized in that the conductive layer functions as a light-shielding layer that blocks visible light between the phosphor layer and the switch element or the conversion element.

6. The radiation detector according to claim 3, characterized in that the conductive layer is electrically connected to the conversion element and a bias voltage is applied.

7. The radiation detector according to claim 3, characterized in that the signal line is provided in a layer above the layer on which the switch element is provided.

8. The radiation detector according to claim 3, characterized in that the signal line is provided in the same layer as the conductive layer.

9. The radiation detector according to claim 3, characterized in that the signal line is provided in a layer above the conductive layer.

10. The radiation detector according to claim 3, characterized in that the signal line is provided below the conductive layer and above the switch element.

11. The aforementioned switch element comprises a source electrode, a drain electrode, and a gate electrode. Having a gate wire connected to the gate electrode, The radiation detector according to claim 3, characterized in that the signal line is provided in a layer between the layer on which the source electrode and the drain electrode are provided and the layer on which the gate line is provided.

12. The aforementioned switch element comprises a source electrode, a drain electrode, and a gate electrode. Having a gate wire connected to the gate electrode, The radiation detector according to claim 3, characterized in that the signal line is provided in a lower layer than the layer in which the gate line is provided.

13. The radiation detector according to claim 3, characterized in that the switching element is a TFT (Thin Film Transistor) made of an oxide semiconductor.

14. The radiation detector according to claim 1, characterized in that the predetermined electrode is the source electrode of the switch element.

15. A radiation imaging apparatus comprising a radiation detector according to any one of claims 1 to 14.

Images