Inspection device, inspection method, and component connection system to substrate

Abstract

To accurately inspect the positional relationship between the first component, a substrate, and the second component, which is to be bonded to or planned to be bonded to the substrate. [Solution] The inspection apparatus of the present disclosure comprises a first grid and a second grid, each having a plurality of slits arranged in a direction perpendicular to the irradiation axis of the X-rays, in the direction of X-ray irradiation from an X-ray irradiation unit; a holding unit for holding a substrate and a second member, which are objects to be irradiated with X-rays; a detection unit to which X-rays are irradiated via the object to be irradiated, the first grid, and the second grid; a grid moving mechanism for moving at least one of the first grid and the second grid as a moving grid in the direction of the arrangement of the slits of the moving grid; and an information acquisition unit for obtaining information regarding the positional relationship between the first mark and the second mark from images of the first mark on the substrate and the second mark on the second member obtained based on the output from the detection unit to which X-rays are irradiated via the moving grid at different positions.

Description

Technical Field

[0001] The present disclosure relates to an inspection apparatus, an inspection method, and a member connection system for a substrate.

Background Art

[0002] In manufacturing a semiconductor device, a step of placing and bonding a chip, which is an electronic component constituting the semiconductor device, at a predetermined position on a substrate such as a semiconductor wafer (hereinafter referred to as a wafer) is performed. In Patent Document 1, a chip, which is a split piece of a first substrate laminated on a second substrate, is adsorbed by a collet and conveyed after reducing its adsorptivity to the second substrate by infrared irradiation. Then, while the chip is held by the collet, after sequentially performing removal of a film provided on the lower surface of the chip and activation by plasma treatment, the chip is placed on a third substrate, thereby bonding the lower surface of the activated chip to the third substrate.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of highly accurately inspecting the positional relationship between a substrate as a first member and a second member to be joined or planned to be joined to the substrate.

Means for Solving the Problems

[0005] The inspection apparatus of the present disclosure includes an X-ray irradiation unit, a first grating and a second grating that are sequentially provided in the irradiation direction of X-rays from the X-ray irradiation unit and each include a plurality of slits arranged in a direction orthogonal to the irradiation axis of the X-rays, A holding part holds a substrate which is a first member and has a first mark formed on it, and a second member which is aligned with the substrate in the irradiation direction and has a second mark formed on it and is connected to or is planned to be connected to the substrate, as the object to be irradiated with X-rays, between the X-ray irradiation part and the first grating or between the first grating and the second grating in the irradiation direction, A detection unit that irradiates the object to be irradiated, the first grating and the second grating with the X-rays, A grid movement mechanism that moves at least one of the first grid and the second grid as a moving grid in the direction of the arrangement of slits of the moving grid, An information acquisition unit obtains information regarding the positional relationship between the first mark and the second mark from images of the first mark and the second mark obtained based on the output from the detection unit, which is irradiated with X-rays through the moving grid at different positions from each other; It is equipped with. [Effects of the Invention]

[0006] This disclosure enables highly accurate inspection of the positional relationship between a first component, a substrate, and a second component that is bonded to or planned to be bonded to the substrate. [Brief explanation of the drawing]

[0007] [Figure 1] This is a side view of one embodiment of the inspection apparatus disclosed herein. [Figure 2] This is a perspective view of the chip and wafer that are the subject of the test. [Figure 3] This is a perspective view showing the grid included in the aforementioned inspection device. [Figure 4] This is a plan view of the alignment marks provided on the wafer. [Figure 5] This is a plan view of the alignment marks provided on the aforementioned chip. [Figure 6] This is an explanatory diagram of an image that includes alignment marks. [Figure 7] This is a schematic diagram of a system including an inspection device and a bonding device for joining wafers and chips. [Figure 8] It is a chart showing the determination flow of the control unit during inspection. [Figure 9] It is an explanatory diagram of the deviation between CAMs constituting each alignment mark. [Figure 10] It is an explanatory diagram showing a moire pattern formed by FAMs constituting each alignment mark. [Figure 11] It is an explanatory diagram showing the normal moire pattern. [Figure 12] It is an explanatory diagram showing the displacement of the moire pattern due to the deviation of FAM. [Figure 13] It is an explanatory diagram showing the displacement of the moire pattern due to the deviation of FAM. [Figure 14] It is an explanatory diagram showing the displacement of the moire pattern due to the deviation of FAM. [Figure 15] It is an explanatory diagram showing a method for calculating the deviation of the chip from the moire pattern. [Figure 16] It is an explanatory diagram showing a method for calculating the deviation of the chip from the moire pattern. [Figure 17] It is an explanatory diagram showing a method for calculating the deviation of the chip from the moire pattern. [Figure 18] It is a plan view of a wafer and a chip having an alignment mark of a comparative example. [Figure 19] It is a plan view of an alignment mark and a moire pattern of a comparative example. [Figure 20] It is a plan view of a mark for explaining the moving direction of the lattice and the arrangement of the marks. [Figure 21] It is a plan view of a mark for explaining the moving direction of the lattice and the arrangement of the marks. [Figure 22] It is a side view showing another example of the inspection device. [Figure 23] It is a side view showing another example of the inspection device. [Figure 24] It is a plan view of a mark for explaining the moving direction of the lattice and the arrangement of the marks. [Figure 25] It is a side view showing another example of the inspection device and the object to be inspected. [Figure 26] It is a plan view showing other examples of marks. [Figure 27] It is a side view of a connection device between a chip including an inspection device and a wafer W. [Figure 28] It is a flowchart of the operation of the connection device. [Figure 29] It is a side view showing the operation of the connection device.

Embodiments for Carrying Out the Invention

[0008] [First Embodiment] This is an embodiment of the inspection device of the present disclosure. The outline of the configuration of the inspection device 1 shown in a side view in FIG. 1 and the outline of the inspection performed by this inspection device 1 will be described. The inspection targets of the inspection device 1 are a wafer W which is a circular substrate and a chip 30. The chip 30 which is an electronic component provided with an electronic circuit is formed in a rectangular parallelepiped shape, for example, and is joined to a bonding region 20 set on the surface of the wafer W.

[0009] As shown in the perspective view of FIG. Alignment marks 2 and alignment marks 3 for specifying the positional relationship between each other are formed at a predetermined position in this bonding region 20 and at a predetermined position on the bottom of the chip 30 in contact with the bonding region 20. When the wafer W and the chip 30 are joined, the regions where the alignment marks 2 and 3 are formed are overlapped with each other. The inspection device 1 images the wafer W to which the chip 30 is joined in this way using X-rays, and acquires an image 40 including both the alignment marks 2 and 3. Then, it is determined whether the position of the chip 30 in the bonding region 20 is appropriate from the positional relationship between the alignment marks 2 and 3 in the image 40.

[0010] [Outline of Inspection Device and Alignment Marks] This inspection device 1 is a device to which a Talbot-Lowe interferometer is applied, and it acquires an image of the subject using a method called fringe scanning. Therefore, the inspection device 1 is configured to utilize the Talbot effect, in which coherent X-rays irradiated from an X-ray source (light source) through a grating G0 and passing through grating G1 form an X-ray intensity distribution with a periodic pattern related to the arrangement of slits in grating G1 at a position (let's call it position A) a certain distance away from grating G1. When the X-rays with the formed intensity distribution are irradiated onto the detection unit 13 that constitutes the inspection device 1, an image of interference fringes with the above periodic pattern, called a self-image, can be acquired. When the subject to be imaged is placed in the device so that X-rays that have passed through grating G0 are irradiated onto it, absorption and scattering by the subject occur, and the phase of the X-rays irradiated onto the detection unit 13 changes, causing the self-image described above to be deformed.

[0011] Hereafter, gratings G0 and G1 will be referred to as source grating G0 and phase grating G1, respectively. Gating G2 (hereinafter referred to as absorption grating G2) is provided at position A above, and X-rays that have passed through phase grating G1 further pass through absorption grating G2 and are irradiated onto the detection unit 13. By superimposing the arrangement pattern of the slits of this absorption grating G2 and the self-image (interference fringes) deformed by the placement of the test subject, a moiré pattern can be obtained. Since this moiré pattern changes by moving phase grating G1, an image of the test subject can be obtained by analyzing this moiré pattern. The test subject in this inspection apparatus 1 is the wafer W and chip 30 described above, and more specifically, the regions on the wafer W and chip 30 where alignment marks 2 and 3 are formed. In short, the inspection device 1 is configured to detect the phase distortion of X-rays caused by the arrangement of the subject (the object irradiated with X-rays) as a change in moiré caused by the relative movement of the phase grating G1 and the absorption grating G2, and to generate an image 40 including alignment marks 2 and 3.

[0012] As a device for detecting alignment marks 2 and 3 formed on such wafers W and chips 30, in addition to the X-ray inspection device 1, there is a known device that irradiates the object with infrared light to acquire an image. However, X-rays have higher penetration into objects than infrared light. Therefore, even if there is a covering that covers the alignment marks 2 and 3, and this covering suppresses the transmission of infrared light, the inspection device 1 is preferable because it can acquire an image 40 including the alignment marks 2 and 3. The above-mentioned covering refers to structures other than the alignment marks 3 that make up the chip 30, for example.

[0013] Furthermore, devices that acquire images using a Talbot interferometer that does not generally have a Talbot-Lowe interferometer and a source grating G0 have a relatively wide field of view and a relatively large depth of field. Due to this wide field of view, as will be described in detail later, the alignment marks 2 and 3 are configured to include marks of different shapes, and these marks of different shapes can be placed within the same field of view of the inspection device 1, allowing the position of the chip 30 on the wafer W to be inspected based on each mark. Therefore, with the inspection device 1, the position of the chip 30 can be determined with high accuracy and speed, resulting in high inspection accuracy. The marks of different shapes are coarse alignment marks and fine alignment marks, which will be described in detail later.

[0014] Furthermore, although the alignment marks 2 and 3 are formed on the wafer W and chip respectively, causing them to be separated from each other in the direction of X-ray irradiation, the inspection device 1 has a large depth of field, as described above, allowing it to acquire clear images of each of the alignment marks 2 and 3. Therefore, the inspection accuracy of the inspection device 1 can be increased from this point of view as well.

[0015] As shown in the perspective view of Figure 2, only one alignment mark 2 and 3 are provided on the bonding region 20 of the chip 30 and on the chip 30 itself on the wafer W. As will be described in detail later with reference to the comparative example, each of the alignment marks 2 and 3 has a shape that allows for the determination of the correctness of the position on the wafer W by acquiring an image of each chip 30 only once. Note that although Figure 1 shows multiple chips 30 being bonded to the wafer W, for convenience, subsequent figures may show only one chip 30 being bonded to the wafer W, as in Figure 2. Bonding regions 20 are set on the wafer W for each chip 30 to be bonded to the wafer W, and the same number of alignment marks 2 and 3 are provided as there are chips 30.

[0016] [Configuration of Inspection Device 1] The configuration of the inspection device 1 will be described in more detail below, with reference to Figure 3, a perspective view showing the various components of the inspection device 1. In the figure, mutually orthogonal directions are shown as the X, Y, and Z directions, respectively. The X and Y directions are horizontal, and the Z direction is vertical. The X-ray irradiation unit 11 including the X-ray source, the source grating G0, the phase grating G1, the stage 12, the absorption grating G2, and the detection unit 13 are arranged in this order from top to bottom in the Z direction (i.e., the direction of X-ray irradiation). The phase grating G1 is connected to the grating movement mechanism 14. The X-ray irradiation unit 11, the source grating G0, the grating movement mechanism 14, the absorption grating G2, and the detection unit 13 are connected to the main body 10 of the inspection device 1, thereby fixing their relative positions to each other.

[0017] The source grating G0, phase grating G1, and absorption grating G2 correspond to the third grating, first grating, and second grating, respectively. Furthermore, as described above, the various parts constituting the inspection apparatus 1 are arranged such that the third grating, the source grating G0, is positioned closer to the X-ray irradiation unit 11 than the first grating, the phase grating G1, and the wafer W and chip 30, which are the objects irradiated with X-rays. The wafer W corresponds to the first component, and the chip 30 corresponds to the second component. The alignment mark 2 formed on the wafer W corresponds to the first mark, and the alignment mark 3 formed on the chip 30 corresponds to the second mark.

[0018] The X-ray irradiation unit 11 is equipped with an X-ray source and irradiates the X-rays vertically downward. Therefore, the irradiation axis L of the X-rays irradiated from the X-ray irradiation unit 11 coincides with the Z direction, and this Z direction is the direction of X-ray irradiation. The X-ray irradiation unit 11 is equipped with, for example, a shutter that blocks the X-rays irradiated from the source and a drive mechanism that moves the shutter in order to switch between irradiating downward X-rays and stopping the irradiation.

[0019] The stage 12, which is the holding part for holding the wafer W, is composed of an annular stage body 12A having an inner diameter larger than the diameter of the wafer W, and a plurality of claw portions 12B that protrude from the stage body 12A toward the center of the stage body 12A. Multiple positions on the back surface of the wafer W that are spaced apart in the circumferential direction are supported by the claw portions 12B. The upper surface of the claw portions 12B is configured as a horizontal mounting surface. The wafer W, to which the chip 30 is bonded to the upper surface of the claw portions 12B of the stage 12, is placed and held on the stage 12 so that the alignment marks 2 and 3 are located within the X-ray irradiation area. In Figure 1, the outer edge of the X-ray irradiation area is shown by a dashed line. Therefore, the area between the two dashed lines in the figure is the X-ray irradiation area. Note that in order to obtain images 40 of the alignment marks 2 and 3, the wafer W is placed facing a predetermined direction, which will be described in detail later. In order to prevent obstruction of the supply of X-rays to the detection unit 13, the stage 12 is configured as described above, and the area below the wafer W other than the area supported by the claw portion 12B is left open.

[0020] As shown in Figure 1, for example, multiple bonding regions 20 are set on the wafer W, and a chip 30 is bonded to each of these bonding regions 20. Therefore, in order to move the wafer W relative to the X-ray irradiation unit 11 and inspect each chip 30, the stage 12 is connected to a stage moving mechanism 51, as illustrated in the second embodiment. The moving mechanism is not shown in Figure 1. Even though the stage 12 is configured to be movable relative to the X-ray irradiation unit 11, the relative position of the stage 12 with respect to the X-ray irradiation unit 11 is fixed while X-rays are irradiated onto the wafer W and chips 30 to acquire an image 40.

[0021] Each of the source grating G0, phase grating G1, and absorption grating G2 is configured as a horizontal plate and has numerous slits 15 that extend in the Y direction and open in the Z direction, which is the direction of X-ray irradiation. In each of the source grating G0, phase grating G1, and absorption grating G2, the slits 15 are arranged at equal intervals along the X direction. Therefore, the slits 15 of the source grating G0, phase grating G1, and absorption grating G2 are arranged in a direction perpendicular to the X-ray irradiation axis L.

[0022] As described above, the source grating G0, phase grating G1, and absorption grating G2 have similar configurations, but their respective roles are different. To further explain the source grating G0, it is a grating used to obtain an effect called the Lau effect, and the X-rays irradiated from the X-ray irradiation section 11 that have passed through the slit 15 of the source grating G0 are directed toward the phase grating G1.

[0023] The lattice movement mechanism 14 moves the phase lattice G1 in the X direction, i.e., in the direction of the arrangement of the slits 15. The detection unit 13 is configured, for example, by arranging a number of conversion elements in a two-dimensional manner to generate electrical signals in response to the irradiated X-rays. With the above configuration of the inspection apparatus 1, the X-rays irradiated from the X-ray irradiation unit 11 pass through the slits 15 of the source lattice G0 and irradiate the chip 30 and wafer W, which are the objects to be irradiated, and then pass through the slits 15 of the phase lattice G1 and the slits 15 of the absorption lattice G2 in order and irradiate the detection unit 13. The electrical signals output from each conversion element in the detection unit 13 are then transmitted to the control unit 100 provided in the inspection apparatus 1.

[0024] [Configuration of the control unit] The control unit 100 is a computer equipped with a program, memory, and a CPU. The program incorporates instructions (each step) so that it can perform the inspections described later. This program is stored on a storage medium, such as a compact disk, hard disk, magneto-optical disk, DVD, etc., and installed on the control unit 100. The control unit 100 outputs control signals to each part of the inspection device 1 using this program, and controls the operation of each part. Specifically, the program is configured to perform various processes such as X-ray irradiation and stopping of irradiation from the X-ray irradiation unit 11, movement of the phase grating G1 by the grating movement mechanism 14, generation of an image based on the electrical signal output from the detection unit 13, determination regarding the alignment marks 2 and 3 in the image described later, and various calculations to obtain the positional relationship of the alignment marks 2 and 3 associated with the determination.

[0025] Furthermore, the program of the control unit 100 is configured to control the operation of the bonding apparatus 8 (described later) that bonds the chip 30 to the wafer W, based on data representing the direction and amount of the displacement of the alignment mark 3 relative to the alignment mark 2, obtained during the inspection process of the position of the chip 30 in the bonding region 20 of the wafer W. With this configuration, the program can proceed with the flow shown in Figure 8, which will be described later. The data representing the direction and amount of the displacement are ΔX1′, ΔY1′, Δθ1, SA, and αr, which will be described later. Such data and the judgment results made based on such data are information regarding the positional relationship between the alignment mark 2 and the alignment mark 3.

[0026] [Operation process of the inspection device] In performing inspection using this inspection device 1, the wafer W to which the chip 30 is bonded is placed on the stage 12 by a transport mechanism (not shown), and the alignment marks 2 and 3 are positioned in the X-ray irradiation area on the stage 12. Then, X-rays are irradiated onto the wafer W from the X-ray irradiation unit 11, and the phase grating G1 moves in the X direction from a predetermined inspection start position. During this X-ray irradiation, an electrical signal is output from the detection unit 13 to the control unit 100. When the phase grating G1 reaches a predetermined inspection end position, the movement and the irradiation of X-rays from the X-ray irradiation unit 11 stop. Based on the electrical signals output from the detection unit 13, which are irradiated with X-rays via the moving grating (phase grating G1) at different positions, the control unit 100 analyzes the change in moiré in the image formed by the self-image and the absorption grating G2, and generates an image 40 including the alignment marks 2 and 3. The movement of the phase grating G1 during the X-ray irradiation may be continuous or intermittent.

[0027] Then, as will be described later, the control unit 100 obtains information about the relative positions of the alignment marks 2 and 3 that have been captured in this manner. Specifically, it acquires data representing the direction and amount of the misalignment between them as described above. This data is then used for bonding the chip 30 to the bonding area 20. Therefore, the control unit 100 corresponds to an information acquisition unit that obtains information about the relative positions of the alignment marks 2 and 3 from the acquired image 40.

[0028] [Details of alignment marks] Next, alignment marks 2 and 3 will be explained in detail. Figures 4 and 5 are plan views of alignment marks 2 and 3, respectively. Note that the dashed lines in the figures and the points (O1, O2) indicating the center positions of the marks are included for explanatory purposes only and are virtual frames and points, respectively. Similarly, the axes of the coordinate system shown in Figure 4 are also virtual axes displayed for explanatory purposes.

[0029] The material that constitutes the lines forming alignment marks 2 and 3 is different from the material surrounding the lines forming alignment marks 2 and 3 in order to enable image acquisition of alignment marks 2 and 3 (to create contrast with the surroundings in image 40). Alignment marks 2 and 3 include a coase alignment mark and a fine alignment mark. In the following description, alignment marks 2 and 3 may be referred to as AM2 and AM3, respectively. Furthermore, coase alignment marks and fine alignment marks may be referred to as CAM and FAM, respectively.

[0030] [Wafer alignment marks] First, let's describe the AM2 formed on the wafer W shown in Figure 4. In a plan view, the AM2 comprises a CAM23 formed in the first region 21 of the mark, and FAM24 formed in the second region 22 arranged on all four sides relative to the first region 21. As the first region 21 and second region 22 are set up in this way, the AM2 is a mark formed in a cross-shaped region on the wafer W. The first region 21 and the second region 22 are each square regions in a plan view. For the sake of explanation, the four second regions 22 may be distinguished from each other as 22A, 22B, 22C, and 22D when viewed in the circumferential direction of a circle centered on a point in the first region 21. In addition, the CAM23 and each FAM24 are formed to fit within the field of view of the inspection device 1 so that the CAM23 and each FAM24 can be imaged together by X-ray irradiation during the unidirectional movement of the phase grating G1 from the inspection start position to the inspection end position, as explained in the operation process of the inspection device. Specifically, CAM23 and each FAM24 are formed to fit within the X-ray irradiation area on the stage 12. CAM23 is a first pre-determination mark, and FAM24 is a first post-determination mark. The second region 22 is a linear arrangement region, with 22A and 22C corresponding to one linear arrangement region, and 22B and 22D corresponding to the other linear arrangement region.

[0031] The outline of CAM23 within the first region 21 is square, or more specifically, CAM23 is constructed as a square-shaped ring. Therefore, as part of the outline of CAM23, there are straight lines extending in different directions, and these lines are inclined at 90° to each other. The center position of this square is shown as the center position O1 of CAM23. Note that this center position O1 is also the center position of AM2. For the sake of explanation, the two-dimensional orthogonal coordinate system on the wafer W with the center position O1 as the origin is defined as the X'Y' coordinate system. Each vertex of the above square coincides with either the mutually orthogonal X' axis or Y' axis of this X'Y' coordinate system. In the explanation of the mark, when the mark is a ring, as in CAM23, the outline is the ring itself, while when the figure is not a ring, as in CAM33 described later, the outline is the periphery of the figure.

[0032] FAM24 in the second region 22 forms a so-called line-and-space pattern, where numerous straight lines 25 extend in the same direction, but are also arranged in a direction different from the direction of extension, specifically perpendicular to the direction of extension. In this way, in FAM24, which is a mark of a group of straight lines, the space between adjacent straight lines 25 is shown as 26. Since each straight line 25 is arranged at equal intervals, each space 26 is also formed at equal intervals. Due to this configuration, the same structure of FAM24 is periodically repeated when viewed in the direction of the arrangement of the straight lines 25. The size of one period of this repetition is shown as the pitch P1. In the figure, a magnified part of FAM24 is shown at the end of the dotted arrow. For the sake of illustration, the straight lines 25 in the magnified part are not filled in, but are shown with dots to distinguish them from the surrounding area. In figures shown later, marks may also be distinguished from their surroundings by being marked with dots in this way. Note that CAM23 and CAM33 (described later) are shown as dotted marks for illustrative purposes, but they do not have such patterns; they may be single-colored marks, like FAM24, the source of the arrow in Figure 4.

[0033] To further explain the positional relationship between CAM23 and FAM24, each FAM24 is formed such that the extension of the straight line 25 extended toward the first region 21 is perpendicular to the sides of the square formed by the outer shape (ring) of CAM23. Therefore, if we call the straight lines that form the sides of this square and extend in directions 90° apart from each other straight line A and straight line B, then the extension direction of the straight line 25 in the second region 22A to 22D coincides with either the extension direction of straight line A or the extension direction of straight line B.

[0034] [Tip alignment marks] Next, we will describe the AM3 formed on the chip 30 shown in Figure 5. Since this AM3 has a similar shape to the AM2 of the wafer W, we will focus on explaining the differences from the AM2. In plan view, the AM3 comprises a CAM 33 formed in the first region 31 of the mark, and FAM 34 formed in the second regions 32 arranged on all four sides of the first region 31. The first region 31 and the second region 32 are each square regions in plan view. As the first region 31 and the second region 32 are set up in this way, the AM3 is also a mark formed in a cross-shaped region. The four second regions 32 may be distinguished from each other as 32A, 32B, 32C, and 32D when viewed in the circumferential direction of a circle centered on a point in the first region 31. These second regions 32A, 32B, 32C, and 32D of the AM3 correspond to the second regions 22A, 22B, 22C, and 22D of the AM2, respectively. When the chip 30 is bonded to the bonding region 20 of the wafer W, the first regions 21 and 31 overlap with each other, and the second regions 22 and 32, which form the same pair, also overlap with each other.

[0035] Furthermore, in order to enable simultaneous imaging of CAM33 and each FAM34 by X-ray irradiation during the unidirectional movement of the phase grating G1 from the inspection start position to the inspection end position as described in the operation process of the inspection device, CAM33 and each FAM34 are formed to fit within the field of view of the inspection device 1. CAM33 is a second pre-determination mark, and FAM34 is a second post-determination mark. The second region 32 is a linear arrangement region, where 32A and 32C correspond to one linear arrangement region, and 32B and 32D correspond to other linear arrangement regions, respectively.

[0036] The CAM33 within the first region 31 is a square mark. Therefore, the outer shape of CAM33 includes straight lines extending at 90° angles to each other. This CAM33 is sized to fit within the CAM23 of AM2 when AM2 and AM3 are superimposed. That is, the length of one side of the square formed by the periphery of CAM33 is shorter than the length of one side of the square formed by the ring of CAM23. The center of this square of CAM33 is indicated as the center position O2 of CAM33. Note that this center position O2 is also the center position of AM3.

[0037] The FAM34 in the second region 32, like the FAM24 in the second region 22, is composed of a group of lines 35 that extend in the same direction, but are also arranged in a direction different from the direction of extension, specifically in a direction perpendicular to the direction of extension, forming a mark of lines. The space between the lines 35 is shown as 36, and a magnified part of the FAM34 is shown at the tip of the dotted arrow in the figure. The same structure is periodically repeated when viewed in the direction of the arrangement of the lines 35 in the FAM34, and the size of one period of this repetition is shown as pitch P2. Pitch P2 is set to a different size from pitch P1 of FAM24 in order to form the moiré pattern 41 described later by the overlapping of FAMs.

[0038] To further explain the positional relationship between CAM33 and FAM34, each FAM34 is formed such that the extension of the straight line 35 extended toward the first region 31 is perpendicular to the sides of the square that forms the outer shape of CAM33. Therefore, if we call the straight lines C and D that form the sides of this square and extend in directions that are 90° apart from each other, then the extension direction of the straight line 35 in the second region 32A to 32D coincides with either the extension direction of straight line C or the extension direction of straight line D.

[0039] [Images of alignment marks 2 and 3 obtained] Figure 6 shows image 40, including AM2 and AM3, acquired by the control unit 100 after imaging by the inspection device 1 using the procedure described above. The first region 21 of alignment mark 2 and the first region 31 of alignment mark 3 are superimposed on the center of image 40, while the second region 22 of alignment mark 2 and the second region 32 of alignment mark 3 are superimposed near the edges of image 40.

[0040] Image 40 in Figure 6 shows an image obtained when the chip 30 is bonded to the bonding region 20 of the wafer W without any displacement. When the chip 30 is bonded to the bonding region 20 without any displacement in this way, the center positions O1 and O2 overlap in a plan view (not shown in the illustration), and the vertices of the square formed by the outline of the CAM 33 coincide with either the X' axis or the Y' axis. In the region where the second region 22 is located in image 40, a moiré pattern 41 appears at the center of the direction of the arrangement of the lines 25 due to the overlap of FAM 24 and 34, which is a line pattern thicker than the lines 25 and 35. Note that the dashed line frame and coordinate system axes showing the second region 22 in Figure 6 are also virtual, similar to those shown in Figures 4 and 5.

[0041] In reality, the chip 30 may be misaligned when bonded to the bonding region 20 of the wafer W, and in that case, the image 40 will be different from the one shown in Figure 6. After the image 40 is acquired by imaging the wafer W and the chip 30, the control unit 100 controls the operation of the bonding apparatus 8 by executing the steps shown in the flowchart of Figure 8, which will be described later, based on the image 40.

[0042] [Configuration of the component connection system] The component connection system 80, including the inspection device 1 described above, will now be explained with reference to the schematic diagram in Figure 7. In addition to the inspection device 1, the component connection system 80 includes a bonding device 8 and a wafer W transport mechanism 81. In the component connection system 80, the bonding device 8 bonds the chip 30 to the bonding region 20 of the wafer W. The wafer W with the chip 30 bonded in this manner is then transported to the inspection device 1 by the transport mechanism 81 for inspection. Data on the direction and amount of misalignment of the alignment mark 3 of the chip 30 relative to the alignment mark 2 of the bonding region 20 of the wafer W (first substrate) is acquired. After acquiring this data on misalignment, bonding is performed in the bonding device 8 on the wafer W (second substrate) to which the chip 30 is to be bonded, so as to eliminate this misalignment. Therefore, in the component connection system 80, the operation of the bonding device 8 when bonding the chip 30 to the wafer W (second substrate) later is feedback-controlled based on the displacement information obtained by the inspection device 1 from the wafer W (first substrate) to which the chip 30 has been previously bonded by the bonding device 8.

[0043] [Configuration of the bonding apparatus] The bonding apparatus 8 comprises a stage 82 on which the wafer W is placed, a moving mechanism 83 for moving the stage 82, a holding part 84 for holding the chip 30 so as to face the wafer W on the stage 82, and a lifting mechanism 85 for raising and lowering the holding part 84 relative to the stage 82. The moving mechanism 83 is configured similarly to the moving mechanism 51 provided in the connection apparatus 1D described later, and is capable of moving the stage 82 forward, backward, left and right, and rotating it around a vertical axis. Therefore, the moving mechanism 83 can move the wafer W relative to the chip 30 in a direction intersecting the direction in which the chip 30 and the wafer W face each other.

[0044] The lifting mechanism 85 allows the holding section 84 to move vertically in the direction opposite to the chip 30 and the wafer W, and lowers relative to the wafer W on the stage 82 that has moved to the desired position, connecting the chip 30 to the bonding region 20. Thus, the lifting mechanism 85 changes the distance between the chip 30 and the wafer W in the direction opposite to the chip 30. This lifting mechanism 85 and the moving mechanism 83 are configured as a relative moving mechanism for connecting the wafer W and the chip 30. The stage 82 on which the wafer W is placed and held corresponds to the first holding section, and the holding section 84 corresponds to the second holding section.

[0045] The surface of the wafer W and the underside of the chip 30 are subjected to a predetermined pre-processing within the component connection system 80, for example, so that when the holding part 84 descends relative to the wafer W and the chip 30 is connected to the wafer W, they are joined together, that is, bonded to each other. The control unit 100 determines the position of the stage 82 when the chip 30 is joined to the wafer W, and controls the movement of the stage 82 by the moving mechanism 83 so that the joining is performed at the determined position. Therefore, when joining the chip 30 and the wafer W, the position and orientation of the stage 82 are controlled by rotation, thereby controlling the relative position of the chip 30 and the wafer W in directions that intersect with each other's opposing directions.

[0046] As will be shown in the control flow later, the position of the stage 82 during bonding (i.e., the determination of the relative position of the chip 30 and wafer W in a direction intersecting the direction in which they face each other) is performed based on the displacement data acquired by the inspection device 1 described above. More specifically, when bonding the chip 30 and wafer W again, the position of the stage 82 is determined by correcting the position of the stage 82 at the time of the previous bonding based on the displacement data, so that the displacement detected by the inspection device 1 is eliminated between the chip 30 and wafer W to be newly bonded.

[0047] [Control flow by the control unit] The flow shown in Figure 8 is explained below. First, data representing the amount of displacement of the CAM33 of the chip 30 relative to the CAM23 of the bonding region 20 of the wafer W (ΔX1′, ΔY1′, Δθ1, described later) is obtained from image 40 (step S1), and it is determined whether the amount of displacement is below a threshold (step S2). If it is determined in step S2 that the amount of displacement is below the threshold, then data representing the amount of displacement between the wafer W and the chip 30 (SA, αr, described later) is calculated from the moiré pattern 41 obtained from the FAM24 of the wafer W and the FAM34 of the chip 30 (step S3), and it is determined whether the amount of displacement is below a threshold (step S4). If it is determined in step S4 that the amount of displacement is below the threshold, the position of the stage 82 of the bonding apparatus 8 is determined based on the amount of displacement obtained from FAM24 and 34 in step S3 (step S5).

[0048] In step S2, if it is determined that the displacement of CAM33 relative to CAM23 exceeds a threshold, the position of the bonding apparatus 8 stage is corrected based on the displacement amounts obtained from CAM23 and CAM33 in step S1 (step S6). Therefore, in this case, position correction based on FAM24 and 34 from step S3 onward is not performed. In this way, in this flow, the positional relationship between the wafer W and the chip 30 is obtained based on FAM24 and FAM34 depending on whether the positional relationship between CAM23 and CAM33 is appropriate. Furthermore, even if it is determined in step S4 that the displacement amount exceeds a threshold, the position is determined in step S6 based on the displacement amounts obtained from CAM23 and CAM33. Note that the data representing the displacement amount obtained in steps S1 and S3 also represents the direction of the displacement.

[0049] [Explanation of Fine Alignment Marks (FAM)] To explain the flow in Figure 8 in more detail, FAM24 and 34 will be further described. When FAM24 and 34 are imaged overlapping each other, they form a linear moiré pattern 41 in the image 40 as described above. As will be shown in a specific example later, if the position of FAM34 is shifted relative to FAM24, the position and extension direction of the moiré pattern 41 will change from that shown in Figure 6, depending on the direction and amount of the shift. Hereafter, in the explanation, the position of FAM34 on the wafer W when there is no shift of the chip 30 relative to the bonding region 20 of the wafer W will be considered the positive position of FAM34. In other words, the position of FAM34 when the moiré pattern 41 is formed as shown in Figure 6 will be considered the positive position.

[0050] As described above, the moiré pattern 41 is thicker than the straight lines 25 and 35, and therefore appears clearly in the image 40. For this reason, it is relatively easy to detect the moiré pattern 41 from the image 40 through image analysis. In other words, even if the FAM 34 is shifted by a small amount from its positive position, that shift will appear clearly in the image as the moiré pattern 41, so the direction and amount of the shift of the FAM 24 from its positive position can be detected with high accuracy. In this way, the FAM 24 and 34 are configured to acquire information regarding the positional shift of the chip 30 relative to the wafer W with high accuracy by forming the moiré pattern 41. As a result, the inspection accuracy of the inspection device 1 (i.e., the detection accuracy of the position of the chip 30 in the bonding region 20 of the wafer W) is improved, and the position correction of the stage 82 of the bonding device 8 can be performed with high accuracy.

[0051] However, if the misalignment of the chip 30 relative to the bonding region 20 is too large, problems may occur, such as being unable to form the moiré pattern 41, or forming a moiré pattern 41 similar to that formed when the misalignment is small. In other words, there is a concern that information regarding the misalignment cannot be accurately obtained based on the moiré pattern 41. Therefore, in the flow described in Figure 8, first, in step S2, a determination is made regarding the misalignment of CAM 23 and 33. If the amount of misalignment of CAM 33 relative to CAM 23 is determined to be below a threshold, it is assumed that the misalignment of the chip 30 relative to the wafer W is relatively small and that position correction using the moiré pattern 41 in steps S3 to S5 can be performed, and the steps from step S3 onward are executed.

[0052] [Regarding obtaining the positional relationship between course alignment marks (CAMs)] Next, referring to Figure 9, which shows CAM23 and 33 in image 40, we will provide a supplementary explanation regarding the determination of the positional displacement of CAM23 and 33 performed in steps S1 and S2. Unlike the image shown in Figure 6, image 40 shown in Figure 9 is an image acquired when the chip 30 is displaced from the bonding region 20 of the wafer W, and the display of FAM24 and 34 is omitted. In Figure 9, for explanatory purposes, dotted lines are shown that pass through the center position O2 of CAM33, pass through the vertices of the square of CAM33, and are mutually orthogonal, and these dotted lines are referred to as the X'' axis and Y'' axis. If the chip 30 does not displace from the bonding region 20 of the wafer W as shown in Figure 6, then the X'' axis and Y'' axis coincide with the X' axis and Y' axis, respectively.

[0053] In step S1 of the flowchart in Figure 8 described above, CAM23 and 33 in image 40 are identified from the contrast in the image 40, and then the center positions O1 and O2 of CAM23 and 33 are calculated. Then, a calculation using a predetermined formula is performed, and from image 40, the following are obtained in the X'Y' coordinate system: ΔX1', which is the X' direction displacement between the center position O1 of CAM23 and the center position O2 of CAM33, and ΔY1', which is the Y' direction displacement, as well as the rotational displacement Δθ1 of CAM33 relative to CAM23. As shown in Figure 8, the rotational displacement Δθ1 is the inclination of the X''Y'' coordinate system relative to the X'Y'' coordinate system, and therefore represents the inclination of CAM23 relative to its proper position. In the following explanation, the inclination of a mark relative to its proper position may also be expressed as a rotational displacement.

[0054] The acquisition of ΔX1′, ΔY1′, and Δθ1 as described above corresponds to the acquisition of information regarding the positional relationship between alignment marks 2 and 3. Furthermore, these ΔX1′, ΔY1′, and Δθ1, which represent the misalignment between alignment marks 2 and 3, also represent the misalignment of the chip 30 relative to the bonding region 20 of the wafer W. In step S2, each of the acquired ΔX1′, ΔY1′, and Δθ1 is compared with a preset threshold. If it is determined that all of ΔX1′, ΔY1′, and Δθ1 are below the threshold, it is determined that the amount of misalignment of CAM33 relative to CAM23 is below the threshold, and step S3 is executed following step S2. For example, if it is determined that any of ΔX1′, ΔY1′, or Δθ1 exceeds the threshold, step S3 is not executed, and as described above, step S6 is executed, and the position of the stage 82 of the bonding apparatus 8 is corrected based on ΔX1′, ΔY1′, and Δθ1. In other words, the position of the stage 82 of the joining device 8 is determined so that these ΔX1′, ΔY1′, and Δθ1 are resolved.

[0055] [Formation of moiré patterns using fine alignment marks (FAM)] Next, we will explain steps S3 and S4 of the flow in Figure 8 in more detail. As described above, when FAM34 is shifted from its positive position, the position of the moiré pattern 41 appearing in image 40 changes from the state shown in Figure 6. Figure 10 shows an example of the moiré pattern 41 that appears when FAM34 is shifted from its positive position. Figures 11 to 13 are schematic explanatory diagrams showing the moiré pattern 41 that appears in the second region 22 where FAM24 is formed in image 40. Of these, Figure 11 shows the moiré pattern 41 that appears when FAM34 is in the positive position, and is therefore a schematic representation of Figure 6.

[0056] Figures 12(a)-(d), 13(a)-(d), and 14(a)-(b) show the moiré pattern 41 that appears when the FAM 34 is shifted from its positive position, with Figure 12(b) being a schematic representation of the moiré pattern 41 in Figure 10. Note that 4A and 4B in Figures 11-13 are imaginary lines drawn to clearly show the positional change of the moiré pattern 41, and are tilted at 45° with respect to the X' axis and Y' axis shown in Figure 9, respectively, and pass through the center position O1. The arrows shown above each of Figures 12(a)-12(d), 13(a)-13(d), and 14(a)-(b) indicate the direction in which the FAM 34 is shifted from its positive position. More specifically, Figures 12(a) to 12(d) and 13(a) to 13(d) show the moiré patterns 41 that appear when the FAM 34 is shifted in eight linear directions, each 45° apart from the positive position. Figures 14(a) and 14(b) show the moiré patterns 41 that appear when the FAM 34 is shifted in a clockwise and counterclockwise rotation direction, respectively, from the positive position.

[0057] As shown in Figures 12(a) to 12(d) and Figures 13(a) to 13(d), when the FAM 24 is shifted linearly from its positive position, the moiré pattern 41 in each second region 22 of the wafer W shifts along the alignment direction of the lines 25 and 35 that form the moiré pattern 41 from the position shown in Figure 11. The combinations of positions of the moiré pattern 41 appearing in the second regions 22A to 22D do not coincide between Figures 12(a) to 12(d) and Figures 13(a) to 13(d). In other words, if the FAM 34 is shifted linearly, the position of the moiré pattern 41 in one of the end regions 22A to 22D will be different from each other if the direction of the shift is different.

[0058] Furthermore, as shown in Figures 14(a) and (b), when the FAM 34 is rotated away from its positive position, the number of moiré patterns 41 appearing in each second region 22 changes, and the direction of extension of the moiré patterns 41 changes to be different from the extension direction in Figure 11. In Figures 14(a) and (b), the combination of directions of the moiré patterns 41 appearing in the second regions 22A to 22D does not match. In other words, if the rotational direction of the displacement of the FAM 34 is different, the appearance of the moiré patterns 41 in one of the end regions of 22A to 22D will be different.

[0059] As described above, the displacement of the FAM 34 from its positive position causes changes in the position, elongation direction, and number of moiré patterns 41 in the second region 22. These changes correspond to the amount of displacement of the FAM 34 from its positive position. Therefore, based on the moiré patterns 41 appearing in each second region 22, the direction and amount of displacement of the FAM 34 from its positive position (i.e., the direction and amount of displacement of the chip 30 relative to the bonding region 20 of the wafer W) can be determined. In Figures 12 to 14, for ease of understanding, cases are shown where the linear displacement and rotational displacement of the FAM 34 from its positive position are not combined, but in reality, there are cases where these displacements are combined. Even when displacements are combined, the direction and amount of displacement from the positive position can be determined by analyzing the position and elongation direction of the moiré patterns 41 within each second region 22.

[0060] An example of a method for detecting the amount of displacement of the chip 30 relative to the wafer W (the amount of displacement of the FAM 34 from the positive position) based on the moiré pattern 41 in step S3 will be described. In this example, it is assumed that the moiré pattern 41 appears in the image 40 as shown in Figure 12(a). First, from the image 40, the position of the second region 22 where the FAM 24 is formed is identified as being located between the extension line L1 of the edge of the CAM 23 shown in Figure 15. In other words, the position of the second region 22 of the wafer W is identified based on the position of the CAM 23 in the image 40. Furthermore, the position of the actual moiré pattern 41 in this second region 22 is identified. In addition, by identifying the second region 22, the position of the moiré pattern 41 (hereinafter sometimes referred to as the reference moiré pattern 41) when the FAM 34 is in the positive position can also be identified in the image 40. In the following explanation, the direction perpendicular to the alignment direction of the FAM24 and CAM23 that form the moiré pattern 41 will be described as the shift direction.

[0061] In Figure 15, a straight line K0 is shown that passes through the width center of the reference moiré pattern 41 and is aligned with the extension direction of the reference moiré pattern 41. This straight line K0 is parallel to the two extension lines L1 and can also be said to be a straight line set to be equally spaced with respect to each of the two extension lines L1. As described above, by specifying the position of the reference moiré pattern 41 and the position of the actual moiré pattern 41, the distance SE between the width center position K1 of the actual moiré pattern 41 and the straight line K0 in the shift direction can be calculated. Figure 15 shows the distance SE obtained from the actual moiré pattern 41 in the second region 22A, but the distance SE is obtained in the same way in the second region 22B, which shows a different moiré pattern 41 movement pattern than the second region 22A. The SE obtained from the second region 22A is denoted as SE1, and the SE obtained from the second region 22B is denoted as SE2.

[0062] Next, we will explain with reference to Figure 16. To visually aid the explanation, Figure 16 shows virtual inscribed circles for the second region 22A and the second region 22B, which form a square, and the center of this inscribed circle and the center of the square are designated as K3. As the point is set in this way, K3 is also a point on the line K0 described above. The intersection point of the width center of the detected moiré pattern 41 and the inscribed circle is designated as K4. The direction from point K3 to point K4 is the direction in which the chip 30 is shifted relative to the bonding region 20 of the wafer W, and the distance SA between points K3 and K4 in this direction corresponds to the amount of linear displacement of the chip 30 relative to the bonding region 20.

[0063] If we set the angle between the line K0 in the second region 22A and the line connecting points K3 and K4 as θ, then the relationship SE1 = SA·sinθ holds. Furthermore, if θ is set in this way, the angle between the line K0 and the line connecting points K3 and K4 in the second region 22B is (90-θ), and the relationship SE2 = SA·sin(90-θ) holds. This angle θ can be obtained by detecting the aforementioned points K3 and K4 from the positions of the second regions 22A and 22B identified from image 40 and the position of the moiré pattern 41. Therefore, by obtaining SE1, SE2 as explained in Figure 15, and the angle θ, the displacement amount SA can be calculated from each of the second regions 22A and 22B using the above relationship. Note that SA can also be obtained from the second regions 22C and 22D in the same manner as from the second regions 22A and 22B. Figure 12(a) shows the case where the chip 30 is shifted in the linear direction, but the amount of shift SA is obtained in the same way when the chip 30 is shifted in other linear directions.

[0064] Next, an example of acquiring the amount of rotational displacement (angle αr) between the wafer W and the chip 30 using the actual moiré pattern 41 in the image, which is performed in step S3, will be explained with reference to Figure 17. In Figure 17, the straight line 25 constituting the FAM 24 in the second region 22B is shown with diagonal lines, while the straight line 35 constituting the FAM 34 is shown without being filled in. The angle αm between the extension line L1 of the side of the CAM 23 and the detected moiré pattern 41 is identified. Since the extension line L1 is parallel to the straight line 25, this angle αm is also the angle between the straight line 25 and the moiré pattern 41. The relationship between the pitch P1 of FAM 24, the pitch P2 of FAM 34, and the angles αm and αr is expressed by the following relational equation. Since the values ​​of pitch P1 and pitch P2 are known (stored in the memory of the control unit 100), the angle αr is calculated from the identified angle αm and the following relational equation. Figure 17 illustrates the second region 22B, but the angle αr can be calculated from each of the second regions 22A to 22D. Note that obtaining the linear displacement SA and rotational displacement αr in this way also constitutes obtaining information about the positional relationship between alignment marks 2 and 3. TIFF2026067277000002.tif1974

[0065] Then, in step S4, for example, the SA and αr obtained from each of the second regions 22A to 22D are compared with a preset threshold. If it is determined that SA and αr are both below the threshold, step S5 of the flow in Figure 8 is performed, and the position of the stage 82 of the joining device 8 is determined based on SA and αr. In other words, the position of the stage 82 of the joining device 8 is determined so that these SA and αr are eliminated. Since SA and αr are calculated from each of the second regions 22A to 22D, for example, the average value of SA and the average value of αr are used, respectively, to correct the position of the stage 82. If it is determined that either SA or αr exceeds the threshold, step S6 is performed, and the position of the stage 82 of the joining device 8 is corrected based on ΔX1′, ΔY1′, and Δθ1 obtained from CAM23 and 33.

[0066] Incidentally, among the four second regions 32 in which FAM34 is formed, the extension direction of the line 35 is the same between 32A and 32C, and between 32B and 32D. Furthermore, among the four second regions 22 in which FAM24 is formed, the extension direction of the line 25 is the same between 22A and 22C, which are paired with second regions 32A and 32C respectively, and between 22B and 22D, which are paired with second regions 32B and 32D respectively. Therefore, as shown in Figures 11 to 14, when FAM34 is shifted from its positive position, the moiré pattern 41 shows a similar change between second regions 22A and 22C, and the moiré pattern 41 shows a similar change between second regions 22B and 22D.

[0067] Since the moiré pattern 41 changes similarly in two of the four pairs of second regions 22 and 32, the calculation of the displacement of the FAM 34 relative to the positive position may be performed by providing only two pairs of second regions 22 and 32 in which the moiré pattern 41 does not change similarly. In other words, it is sufficient to provide at least one pair of second regions 22 and 32 that extends in one direction with respect to the straight lines 25 and 35, and at least one pair of second regions 22 and 32 that extends in a direction different from the one with respect to the straight lines 25 and 35. Specifically, if second regions 22A and 32A are provided, then another pair of second regions 22 should be provided, such as second regions 22B and 32B or second regions 22D and 32D, which show a change in the moiré pattern 41 different from that of second regions 22A and 32A.

[0068] Furthermore, let's assume that only one pair of second regions 22 and 32 is provided. In this case, even if the direction of displacement of FAM 34 relative to its positive position is different, the position of the moiré pattern 41 in the second region 22 may appear to be the same, making it impossible to determine the direction of displacement. To give a specific example, as shown in Figure 12(b) and Figure 13(a), the direction of displacement of FAM 34 is different, but the same moiré pattern 41 appears in the second region 22A.

[0069] Therefore, if only one set of the second regions 22 and 32 is provided, the direction of the displacement of FAM 34 cannot be detected from the moiré pattern 41, and the linear displacement amount SA of FAM 34 relative to the positive position described above cannot be calculated. For this reason, two or more sets of the second regions 22 and 32 should be provided as described above.

[0070] [Alignment marks for comparative example] To explain the advantages of alignment marks 2 and 3 being composed of multiple sets of CAM 23, 33 and FAM 24, 34 as described above, a comparative example of alignment marks will be described. Figure 18 is a plan view of a chip 30 bonded to a wafer W. Alignment marks 2A and 3A, which are the first comparative example, are provided on the wafer W and chip 30, respectively, in place of alignment marks 2 and 3. In the example shown in Figure 18, alignment mark 2A is provided inside the rectangular bonding area 20, and near the center in the longitudinal direction of each side of the rectangle. Depending on the arrangement of alignment mark 2A, four alignment marks 3A are provided on the chip 30, relatively far apart from each other. In other words, four sets of alignment marks 2A and 3A are provided, and the arrow in the figure points to an image 40 obtained from one of these sets of alignment marks 2A and 3A.

[0071] Alignment marks 2A and 3A are each annular, and the outer diameter of alignment mark 3A is smaller than the inner diameter of alignment mark 2A, so alignment mark 3A fits within alignment mark 2A. In the acquired image 40, the center positions of alignment mark 2A and alignment mark 3A are shown as O3 and O4, respectively. In this Figure 18, for explanatory purposes, unlike the previous X'Y' coordinate system, a Cartesian coordinate system set on the wafer W with the center position O3 as the origin is shown as the X'Y' coordinate system. Alignment marks 2A and 3A, which form the same pair, are imaged by the inspection device 1 in the same way as alignment marks 2 and 3, and images are acquired. The control unit 100 of the inspection device 1 can detect the displacement of center position O4 relative to center position O3, that is, the displacement of alignment mark 3A relative to alignment mark 2A, by analyzing this image.

[0072] However, it is impossible to determine whether the misalignment of the alignment marks 2A and 3A is caused by the chip 30 shifting along the X' and / or Y' axes of the X'Y' coordinate system, by the rotation of the chip 30 relative to the X'Y' coordinate system, or by a combination of these misalignments. In other words, the misalignment information obtained from a single image of alignment marks 2A and 3A does not allow us to determine the positional relationship between the bonding region 20 of the wafer W and the chip 30.

[0073] To obtain this positional relationship, it is necessary to shift the X-ray irradiation area on the wafer W using a stage movement mechanism to acquire images of multiple sets of alignment marks 2A and 3A, and to detect the direction and amount of displacement between the central positions O3 and O4 for each set. Therefore, in this comparative example 1, four sets of alignment marks 2A and 3A are provided on the wafer W and the chip 30, and an image 40 is acquired for each set, thereby obtaining the positional relationship between the bonding area 20 and the chip 30, and determining whether the position of the chip 30 in the bonding area 20 is correct or not. However, requiring the acquisition of images 40 from multiple locations on the wafer W in order to inspect a single chip 30 may hinder the improvement of the throughput of the inspection device 1.

[0074] Next, the alignment marks 2B and 3B of Comparative Example 2 will be explained, focusing on the differences from alignment marks 2 and 3, with reference to Figure 19. These alignment marks 2B and 3B each have first regions 21 and 31 where CAM 23 and 24 are formed, respectively, similar to alignment marks 2 and 3. Furthermore, alignment marks 2B and 3B each have one second region 22 and 32 where FAM 24B and 34B are formed, respectively.

[0075] The upper part of Figure 19 shows FAM24B and FAM34B. As shown in the figure, FAM24B and FAM34B are patterns formed in a grid pattern. For FAM24B, many straight lines 25 are arranged vertically and horizontally in a plan view, and the vertical and horizontal pitches are P3, respectively. For FAM34B, many straight lines 35 are arranged vertically and horizontally in a plan view, and the vertical and horizontal pitches are P4, which is different from P3, respectively. The lower part of Figure 16 shows the moiré pattern 41B that appears in image 40 when the second regions 22 and 32 overlap. The lower left side of the figure shows the moiré pattern 41B that appears when FAM34B is in the correct position. The center and right sides of the lower part of the figure show the moiré pattern 41B that appears when FAM34B is shifted from the correct position, and the center and right sides show the moiré pattern 41B that appears when it is shifted linearly and rotationally relative to the correct position, respectively.

[0076] As shown in the figure, the moiré pattern 41B is cross-shaped. If FAM34B is shifted linearly relative to the positive position, the center of the cross in the moiré pattern 41B moves within the second region 22 according to the direction of the shift. If FAM34B is shifted rotationally relative to the positive position, the direction in which the cross of the moiré pattern 41B extends within the second region 22 changes according to the direction of the shift. Since there are no cases where the changes in the moiré pattern 41 are common despite different shift directions, as in the case of alignment marks 2 and 3, alignment marks 2B and 3B can calculate the amount of shift (SA, αr) of FAM34B relative to the positive position even if there is only one set of second regions 22 and 32. In other words, it may be possible to perform the inspection.

[0077] However, it is difficult to accurately detect the center position in the region where the vertical and horizontal moiré patterns forming a cross overlap. Therefore, it is difficult to detect the position corresponding to K1, which is the width center of the detected moiré pattern 41 as explained in Figure 15. Consequently, there is a concern that the inspection accuracy of the inspection device 1 may not be sufficiently high because it is difficult to accurately grasp the displacement of the moiré pattern.

[0078] [Advantages of Alignment Marks 2 and 3] The alignment marks 2 and 3 shown in Figures 4 and 5 prevent the occurrence of the defects described in Comparative Examples 1 and 2. Therefore, the moiré pattern 41 in the image 40 can be identified with high reliability, thereby increasing the inspection accuracy of the inspection device 1. Furthermore, the alignment marks 2 and 3 are formed by a sequence of straight lines and a square pattern, resulting in non-circular marks, which allows for the identification of the rotational misalignment of the chip 30 relative to the bonding region 20. Therefore, as described above, it is possible to detect and inspect both the linear and rotational misalignments in a single image, thereby increasing the throughput of the inspection device 1.

[0079] [Relationship between alignment marks and the direction of movement of the phase grid G1] Considering the above advantages, alignment marks 2 and 3 are set to the shapes described above. When performing inspection using these alignment marks 2 and 3, the wafer W is placed on the stage 12 in a predetermined orientation. The reason for this will be explained with reference to Figure 20. Figure 20 shows a plan view of the phase grating G1 and the CAM 33 of alignment mark 3 during imaging of the comparative example, and the illustration of the FAM 34 of alignment marks 2 and 3 is omitted. In Figure 20, it is shown that imaging is performed with two of the four sides of the square formed by the CAM 33 aligned in the X direction in which the phase grating G1 moves.

[0080] In Figure 20, the white arrow points to the CAM33 of alignment mark 2 in the acquired image 40. As shown in the figure, only the edges of CAM33 extending in the Y direction appear in image 40, while other parts do not appear in the image. That is, parts of CAM33 other than the edges extending in the Y direction do not form contrast in image 40. As described above, when the phase grating G1 is moved in the direction of the arrangement of the slits 15 of the phase grating G1, images of the subject alignment marks 2 and 3 are generated based on the change in moiré that appears in the image due to the overlap between the absorption grating G2 and the self-image. More specifically, the inspection device 1, which uses a Talbot Lau interferometer, can output three types of images: absorption, phase, and scattering images. Regarding the phase image, the straight lines of the subject extending in the direction of the arrangement of the slits 15 do not cause the change in moiré due to this movement and therefore do not appear in image 40. As described above, depending on the orientation of the wafer W on the stage 12, parts of alignment marks 2 and 3 in image 40 may be missing, making inspection impossible.

[0081] To prevent this, when X-ray irradiation is performed on the wafer W, the straight lines forming the ring of CAM23 of alignment mark 2, the straight lines 25 of FAM24, and the straight lines forming the sides of the square of CAM33 of alignment mark 3, and the straight lines 35 of FAM are tilted with respect to the X direction, which is the direction of the arrangement of the slits 15, with respect to the X direction in which the phase grating G1 moves. Specifically, when X-ray irradiation is performed, it is preferable that the angle Δθ3 with respect to the X direction when viewed in the direction of X-ray irradiation for the straight lines forming the ring of CAM23, the straight lines 25 of FAM24, and the straight lines forming the sides of the square of CAM33 of alignment mark 3, and the straight lines 35 of FAM is, for example, 45°. Figure 21 shows a plan view of CAM23 and 33 with Δθ3 = 45°. Although the FAM24 and 34 are not shown in Figure 21, since the Δθ3 = 45° is set for the straight lines CAM23 and 33, the Δθ3 = 45° is also set for the straight lines 25 and 35 of FAM24 and 34.

[0082] Let me add some explanation regarding setting Δθ3 = 45°. As previously mentioned, the position of the chip 30 on the wafer W may shift in the rotational direction. Also, when placing the wafer W on the stage 12, it is possible that the wafer W may rotate relative to the stage 12 due to factors such as the operational accuracy of the transport mechanism 81 that transports the wafer W. Setting Δθ3 = 45° during X-ray irradiation means that the chip 30 is bonded to the bonding region 20 of the wafer W without shifting, and that when placing the wafer W on the stage 12, it is assumed that there is no shift of the wafer W due to the transport error mentioned above, so that the wafer W is placed on the stage 12 so that Δθ3 = 45° and the wafer W is irradiated with X-rays. In other words, setting Δθ3 = 45° means setting it so that Δθ3 = 45°.

[0083] Regarding the method for placing the wafer W onto the stage 12, a specific example is to detect a notch N, which is a cutout formed on the periphery of the wafer W, before transporting the wafer W to the inspection apparatus 1, and rotate the wafer W according to the detection result, thereby orienting the wafer W in a predetermined direction. This detection of the notch N and rotation of the wafer W can be performed using an apparatus configured to include a sensor 63, a stage 12, and a stage movement mechanism 51, as described in the second embodiment. By placing the wafer W, which has been oriented in the predetermined direction, onto the stage 12 using the transport mechanism 81, the angle is made such that Δθ3 = 45°. Alternatively, the inspection apparatus 1 may be equipped with a stage movement mechanism 51 and a sensor 63 to detect the notch N and orient the wafer W in the predetermined direction, thereby making the angle Δθ3 = 45°.

[0084] Furthermore, when acquiring image 40 as a phase image, the lines forming the ring of CAM23 of alignment mark 2, the line 25 of FAM24, and the lines forming the sides of the square of CAM33 of alignment mark 3, as well as the line 35 of FAM, only need to be inclined with respect to the X direction. Therefore, the angle Δθ3 between the X direction and each line forming these marks should be between 0° and 90°, as long as it is not 0° or 90°. In other words, it is not limited to Δθ3 = 45°. However, by setting Δθ3 = 45°, the contrast of the four sides of the square can be made uniform, allowing for a more accurate calculation of the center position of this square. Therefore, for CAM23 and 33, O1 and O2 can be calculated more accurately, which is preferable.

[0085] Incidentally, as mentioned above, with respect to alignment mark 2, the extension direction of each straight line forming the outer shape (ring) of CAM 23 coincides with the extension direction of the straight line 25 forming FAM 24. Since there are only two extension directions for the straight lines that constitute the mark, it is less likely that the straight lines will align in the X direction even if there is a shift in the rotation direction of the chip 30 or a transport error of the wafer W, compared to the case where the mark is formed by straight lines extending in multiple directions. In other words, alignment mark 2 is designed in such a way that the disappearance of the straight line portion that forms the alignment mark 2 is less likely to occur in the image 40 when it is a phase image, which is preferable in that it allows for reliable inspection. Similarly, with respect to alignment mark 3, the extension direction of each straight line forming the outer shape of the square CAM 33 coincides with the extension direction of the straight line 35 forming FAM 34, so there are only two extension directions for the straight lines that constitute the mark, which is preferable because it is less likely that the disappearance of the straight line portion will occur in the image 40.

[0086] Furthermore, the joint where the straight sections of CAM23 of alignment mark 2 are joined forms a curve, as shown in Figure 4. That is, CAM33 has a rounded square top. In other words, although alignment mark 2 is formed by straight lines as described above, it may include curves. Similarly, alignment mark 3 may have a rounded square top of CAM33, and its outer shape may include curves. In other words, the outer shape of alignment mark 3 is not limited to being composed solely of straight lines, but may also include curves.

[0087] [Modified example of the inspection device of the first embodiment] The following describes various inspection devices, which are variations of inspection device 1, focusing on the differences from inspection device 1. Figure 22 shows a side view of inspection device 1A. In inspection device 1A, a stage 12 is provided above the phase grating G1 and below the source grating G0, and X-rays that have passed through the phase grating G1 are irradiated onto alignment marks 2 and 3. Thus, the wafer W and chip 30, which are the test subjects, may be positioned between the phase grating G1 and the absorption grating G2 in this device configuration.

[0088] Figure 23 shows a side view of the inspection device 1B. As described above, in performing the inspection, it is sufficient to create a moiré pattern in the image by overlapping the self-image formed by the phase grating G1 with the image of the absorption grating G2, and furthermore, to be able to change that moiré pattern. In order to create and change the moiré pattern in this inspection device 1B, the absorption grating G2 is configured as a moving grating that moves by a grating movement mechanism 14 instead of the phase grating G1, and moves in the X direction, which is the direction of the arrangement of the slits 15 of the absorption grating G2, when acquiring the images 40 of the alignment marks 2 and 3. Note that if the moiré pattern can be created and changed in this way, both the phase grating G1 and the absorption grating G2 may be moved.

[0089] As described above, in changing the moiré pattern caused by the overlap of the self-image and the pattern of the absorption grating G2, the direction of movement of the phase grating G1 is not limited to coinciding with the X direction, which is the alignment direction of the slits 15 of the phase grating G1. The direction of movement of the phase grating G1 does not need to coincide with the direction (Y direction) along the extension direction of the slits 15 of the phase grating G1 when viewed in the direction of X-ray irradiation. Therefore, as shown in the plan view of Figure 24, the phase grating G1 may move in both the X and Y directions. In other words, for the phase grating G1 to move in the alignment direction of the slits 15 of the phase grating G1 means that the alignment direction of the slits 15 is included as a component of its movement direction. Similarly, when moving the absorption grating G2, the direction of movement of the absorption grating G2 does not need to coincide with the direction along the extension direction of the slits 15 when viewed in the direction of X-ray irradiation.

[0090] In each inspection apparatus described so far, X-rays are irradiated vertically downwards, but the direction of X-ray irradiation is arbitrary. Depending on the change in the direction of X-ray irradiation from the examples described above, the orientation of the grids G0, G1, G2, stage 12, and detection unit 13 can also be appropriately changed from the examples described above. Furthermore, the test subjects of each inspection apparatus are not limited to wafers W to which chips 30 are bonded. For example, as shown in Figure 25, wafers W with alignment marks 2 and 3 formed on them may be bonded together, and these bonded wafers W may be used as test subjects. In other words, whether the bonding position of one wafer W to the other wafer W is correct can be determined by detecting the misalignment of alignment marks 2 and 3 according to the flow in Figure 8.

[0091] [Further explanation of alignment marks and variations thereof] Alignment marks 2, which have been described as being formed on the wafer W, may be formed on the chip 30, and alignment marks 3, which have been described as being formed on the chip 30, may be formed on the wafer W. Furthermore, alignment marks 2 and 3 may include only CAM23 and 33 among CAM23 and 33 and FAM24 and 34. In other words, the position of the chip 30 relative to the wafer W may be determined by ΔX1′, ΔY1′, and Δθ1 calculated from CAM23 and CAM33. However, since a more accurate inspection can be performed by using the moiré pattern 41 formed by FAM24 and 34, it is preferable that alignment marks 2 and 3 each include FAM24 and 34.

[0092] Furthermore, alignment marks 2 and 3 may include only FAM24 and 34 among CAM23 and 33 and FAM24 and 34. However, as mentioned above, if the displacement of the chip 30 relative to the bonding region 20 of the wafer W is relatively large, there is a risk that normal inspection based on the moiré pattern 41 may not be possible, so it is preferable that alignment marks 2 and 3 include CAM23 and 33, respectively.

[0093] In order to ensure that alignment marks 2 includes CAM23 and FAM24, and alignment marks 3 includes CAM33 and FAM34, CAM23, CAM33 and FAM24, FAM34 are positioned relatively far apart. Then, after acquiring images of CAM23, CAM33 and making the determination regarding CAM23, CAM33 in step S1, the X-ray irradiation area on the wafer W may be moved to acquire images of FAM24, CAM34 and make the determination regarding CAM23, CAM33 in step S1. In other words, CAM23, CAM33 and FAM24, CAM34 may be formed so that they are not included in the same field of view of the inspection device 1. However, as described in the explanation of Comparative Example 1, if images are repeatedly acquired in this manner, there is a concern that the throughput of the inspection device 1 will decrease, so it is preferable to form CAM23, CAM33 and FAM24, CAM34 so that they are included in the same field of view of the inspection device 1.

[0094] Incidentally, we have described that CAM23 and 33 are formed in the first regions 21 and 31 which are located near the center of the image 40, and FAM24 and 34 are formed in the second regions 22 and 32 which are located near the edges of the image 40. However, the positional relationship between the regions where CAM23 and 33 are formed and the regions where FAM24 and 34 are formed is arbitrary. In order to increase the throughput of the inspection device 1, as in the examples described above, it is sufficient to ensure that the first regions 21 and 31 where CAM23 and 33 are located and the second regions 22 and 32 where FAM24 and 34 are located are within the same field of view of the inspection device 1, so that CAM23 and 33 and FAM24 and 34 can be displayed in a single image 40.

[0095] Furthermore, for FAM24, the width of the line 25 and the width of the space 26 may be the same or different. Similarly, for FAM34, the width of the line 35 and the width of the space 36 may be the same or different. In the example described above, with FAM34 in the correct position, the moiré pattern 41 appears to bisect the second region 22 as shown in Figure 6. However, depending on the relationship between the sizes of the lines 25, 35 and the spaces 26, 36, and the settings of the pitches P1 and P2, it may appear in a different position than shown in Figure 6. FAM24 and FAM34 may be set so that the moiré pattern 41 appears in a different position than shown in Figure 6.

[0096] Incidentally, the external shapes of CAM23 and CAM33 are not limited to being squares; for example, they may be formed as rectangles other than squares. The reason for this is that being rectangular means the figure has vertices, and if the figure has vertices in this way, the orientation of CAM23 and CAM33 can be determined from image 40, and furthermore, the difference in their orientations (i.e., the rotational difference of CAM33 relative to CAM23) can be determined. If the rotational difference can be determined in this way, it prevents the situation described in Comparative Example 1 where only the difference between the center position of the figure of CAM23 and the center position of the figure of CAM33 can be determined, and it becomes possible to calculate ΔX1′, ΔY1′, and Δθ1 as described in Figure 9. In other words, the direction and amount of the difference can be determined in a single image. For these reasons, the external shapes of CAM23 and CAM33 are not limited to being rectangles; they may be triangles or polygons with five or more vertices.

[0097] Furthermore, it is sufficient that CAM23 and CAM33 are formed in such a way that their orientations can be determined from image 40, respectively. Therefore, the external shapes of CAM23 and CAM33 are not limited to being formed as figures with three or more vertices as described above. Specifically, they may be formed to have an elliptical external shape as shown in Figure 26. Thus, although examples in which the external shapes of CAM23 and 33 include straight lines have been described so far, they may also be configured without straight lines. In this way, CAM23 and 33 do not need to be perfect circles like in Comparative Example 1.

[0098] However, if the outer shapes of CAM23 and CAM33 are made elliptical or rectangular as shown in Figure 26, there is a risk of them becoming larger due to elongation in certain directions. Also, if they are made into shapes with a relatively large number of vertices, such as pentagons, there is a risk of them becoming larger due to the protrusion of the vertices in each direction. As a result, the area occupied by CAM23 and CAM33 in a single image 40 becomes large, and there is a risk that the number of FAM24 and 34 pairs that can be contained in image 40 will be limited. From the viewpoint of minimizing the area occupied by CAM23 and CAM33 and providing a relatively large number of FAM24 and 34 pairs as in the examples described above, it is preferable to make the outer shapes of CAM23 and CAM33 square.

[0099] Figures 15 to 17 show one method for detecting the amount of displacement using the moiré pattern 41, but this method for detecting the amount of displacement may be changed as appropriate. The control unit 100 may store data on the position of a reference moiré pattern 41 in the second region 22, and the amount of displacement may be calculated according to a predetermined algorithm by comparing this reference moiré pattern 41 with the moiré pattern 41 actually detected in the second region 22.

[0100] [Other operating modes of the inspection device] The amount of misalignment acquired by the inspection device 1 is not limited to being used for feedback control of the operation of the joining device 8, but may also be used to determine whether or not there is an abnormality. In other words, in the flow of Figure 8, if the acquired amount of misalignment is determined to exceed a threshold in steps S2 and S4, the inspection device 1 may be configured to notify the user that the joining is abnormal through images, sound, etc. However, since the expected amount of misalignment is small, in the above example, abnormality determination based on such an amount of misalignment is not performed, and the operation of the joining device 8 is controlled accordingly. It should also be noted that the inspection device 1 may be configured so that the user is notified by displaying the amount of misalignment and the direction of the misalignment on a display unit of the inspection device, without comparing the acquired amount of misalignment with a threshold.

[0101] [Second Embodiment] As a second embodiment, a connection device 1D incorporating the inspection device 1 will be described with reference to the side view in Figure 27, focusing on the differences from the inspection device 1. The connection device 1D acquires an image 40 by capturing the alignment marks 2 and 3 of the chip 30 and wafer W before they are joined together, and detects the misalignment between the chip 30 and the wafer W. The chip 30 is placed on the joining region 20 of the wafer W so as to reduce this misalignment. Therefore, the connection device 1D acquires an image 40 by capturing the wafer W and the chip 30 which is to be connected to the wafer W and is located away from the wafer W in the direction of X-ray irradiation.

[0102] The stage 12 on which the wafer W is placed is connected to a stage movement mechanism 51. This movement mechanism 51 comprises a horizontal movement section 52 and a rotational movement section 53. The horizontal movement section 52 is a so-called XY stage, and is equipped with a base 54 that can move in the X and Y directions. The rotational movement section 53 is provided on this base 54, and the stage 12 rotates around the Z axis by the rotational movement section 53. The axis of rotation by this rotational movement section 53 passes through the center of the area on the stage 12 on which the wafer W is placed. Therefore, the stage 12 can move in the X and Y directions together with the wafer W on which it is placed, and can also rotate around a central axis that passes through the center of the wafer W. In the figure, the stage 12 is shown as being configured to block and support most of the lower part of the wafer W, but in order not to obstruct the transmission of X-rays, it can be configured to support only a part of the peripheral edge of the wafer W, for example, as in the first embodiment. The control unit 100 controls the operation of the movement mechanism 51 based on the detected misalignment of the alignment marks 2 and 3, and connects the chip 30 to the wafer W.

[0103] Sensors 63, consisting of a light-emitting unit 61 and a light-receiving unit 62, are provided on the upper and lower sides of the peripheral edge of the wafer W placed on the stage 12. During the rotation of the stage 12, which is positioned at a predetermined location in the XY plane, light is emitted from the light-emitting unit 61 to the light-receiving unit 62, and the control unit 100 can determine the position of the notch N formed on the wafer W by receiving a detection signal from the light-receiving unit 62.

[0104] Furthermore, the connection device 1D is equipped with a chip transport mechanism 7, which includes a holding part 71 that attracts and holds the upper surface of the chip 30, and a moving mechanism 72 that moves the holding part 71 horizontally and vertically up and down. In the illustrated example, the horizontal movement of the holding part 71 is performed as a pivoting movement, and the chip 30 attracted by the holding part 71 is transported from a predetermined preparation position 73 to the bonding area 20 of the wafer W on the stage 12.

[0105] The stage 12 and the holding section 71 constitute the first holding section and the second holding section, respectively. As described above, the moving mechanism 51 for the stage is configured so that the bonding region 20, which is the position on the wafer W placed on the stage 12 where the chip 30 is to be connected, and the chip 30 held in the holding section 71 can be moved relative to each other in a direction perpendicular to the X-ray irradiation axis L. In addition, the moving mechanism 72 of the chip transport mechanism 7 makes it possible to change the relative distance between the chip 30 held in the holding section 71 and the wafer W on the stage 12 along the vertical direction, which is the direction of X-ray irradiation. These moving mechanisms 51 and 72 constitute a relative moving mechanism that changes the relative positions of the stage 12 and the holding section 71.

[0106] In addition, the holding section 71 may also be provided with through holes as appropriate, similar to the stage 12, to ensure that the X-rays supplied from the X-ray irradiation section 11 are not obstructed from irradiating the detection section 13. In the connecting device 1D, for example, similar to the inspection device 1, the X-ray irradiation section 11, the source grating G0, the grating movement mechanism 14, the absorption grating G2, and the detection section 13 are connected to the main body of the device 10, and their relative positions are fixed, but the main body of the device 10 is not shown in Figure 27.

[0107] The operation of the connection device 1D will be explained with reference to the flow chart in Figure 28. The wafer W is placed on the stage 12, which is positioned in a predetermined location on the XY plane by the transport mechanism. The wafer W is rotated by the stage movement mechanism 51, and the control unit 100, which receives the output signal from the sensor 63, detects the notch N. The stage 12 rotates so that the notch N faces a predetermined direction, and the stage 12 moves horizontally so that the bonding region 20 of the wafer W is positioned in a predetermined location on the XY plane. While the position of the wafer W is adjusted in this way, the chip 30, which is positioned in the preparation position 73, is held by the holding part 71 of the chip transport mechanism 7. Then the holding part 71 is moved by the movement mechanism 72, and the chip 30 is placed on the bonding region 20. As the wafer W and chip 30 move in this way, the alignment marks 2 and 3 are placed within the X-ray irradiation area on the stage. Subsequently, the image 40 is acquired in the same procedure as the inspection device 1.

[0108] For CAM23 and CAM33 of alignment marks 2 and 3 in image 40, ΔX1′, ΔY1′, and Δθ1 are acquired in the same way as in steps S1 and S2 of the first embodiment, and it is determined whether each of these ΔX1′, ΔY1′, and Δθ1 is below a threshold (step S11). If it is determined in step S11 that any of ΔX1′, ΔY1′, or Δθ1 exceeds the threshold, the stage 12 moves by the difference between the value of ΔX1′, ΔY1′, or Δθ1 that exceeds the threshold and the amount of deviation from the threshold, so that all of ΔX1′, ΔY1′, and Δθ1 are below the threshold. In other words, the stage movement mechanism 51 performs one or more movements of the stage 12, such as movement in the X direction, movement in the Y direction, or rotational movement, so that each of ΔX1′, ΔY1′, and Δθ1 is below the threshold. Then, image 40 is acquired again (step S12). If it is determined in step S11 that ΔX1′, ΔY1′, and Δθ1 are all below the threshold, step S12 is not performed, and the process proceeds to step S13. Figure 27 shows the state of the connection device 1D at the time of execution of step S11.

[0109] After step S11 or steps S11 and S12 described above are performed, SA and αr are obtained for the FAM24 and FAM34 of alignment marks 2 and 3 in image 40, similar to step S3 of the first embodiment. Then, for each of these SA and αr, it is determined whether or not they are below a threshold, similar to step S4 of the first embodiment (step S13). If step S12 is not performed, SA and αr are obtained from the moiré pattern 41 formed from the FAM24 and 34 of image 40, which were also used in step S11. If step S12 is performed, SA and αr are obtained from the moiré pattern 41 formed from the FAM24 and 34 of image 40 newly obtained in step S12.

[0110] If it is determined in step S13 that either SA or αr exceeds the threshold, the stage 12 moves by the difference between the value of SA or αr that exceeds the threshold and the amount of deviation from the threshold, so that all of SA and αr2 are below the threshold (step S14). In other words, similar to step S11, one or more movements of the stage 12, such as movement in the X direction, movement in the Y direction, or rotational movement, are performed so that each of SA and αr is below the threshold. After that, when the holding part 71 descends and the chip 30 is connected to the bonding area 20, the suction of the chip 30 by the holding part 71 is released and the chip 30 is placed on the bonding area 20 (step S15). Figure 29 shows a side view of the connecting device 1D when the connection in step S15 is performed.

[0111] If it is determined in step S13 that SA and αr are below the threshold, step S14 is not performed and the process proceeds to step S15, where the chip 30 is placed on the bonding region 20. After the chip 30 is placed and the holding portion 71 separates from the chip 30, the wafer W is heated, for example, by a heating device, and the solder provided on the bonding region 20 wafer W or chip 30 melts, thereby bonding the chip 30 and the bonding region 20 to each other via the solder. With the above-described connecting device 1D, the chip 30 is placed on the bonding region 20 in such a way that the amount of displacement between the bonding region 20 and the chip 30 is reduced, thus preventing a decrease in the yield of products manufactured from the wafer W and the chip 30.

[0112] In this connection device 1D, the misalignment between the wafer W and the chip 30 is reduced by the movement mechanism 51 moving the wafer W together with the stage 12. However, the chip transport mechanism 7 may be configured so that the misalignment is reduced by the movement of the chip 30. Alternatively, instead of connecting the wafer W and the chip 30 by lowering the chip 30 with the chip transport mechanism 7, the movement mechanism 51 may be configured to allow the stage 12 to move up and down, and the connection may be made by raising the wafer W together with the stage 12.

[0113] In the flow chart of Figure 28, after steps S11 and S12 are completed, steps S13 and S14 may be omitted, and the connection between the chip 30 and the wafer W in step S15 may be performed. Therefore, the alignment marks 2 and 3 may consist only of CAM23 and 33 among CAM23 and 33 and FAM24 and 34, and only CAM23 and 33 may be used for the connection. However, in order to further reduce the misalignment of the chip 30 with respect to the bonding area 20, it is preferable to include FAM24 and 34 in the alignment marks 2 and 3, and to perform steps S13 and S14 to connect the chip 30 to the wafer W.

[0114] Of the technologies described in the first embodiment, those applicable to the second embodiment can be applied as appropriate. Furthermore, while examples were shown in which each inspection device of the first embodiment and the connection device 1D of the second embodiment are configured as devices to which a Talbot-Lowe interferometer is applied by providing a source grating G0, the configuration is not limited to this. Specifically, the devices may be configured without a source grating G0, and still be used as inspection devices or connection devices to which a Talbot interferometer is applied.

[0115] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The above embodiments may be omitted, replaced, modified, or combined in various ways without departing from the scope and spirit of the appended claims. [Explanation of Symbols]

[0116] G1 Phase grating (grating) G2 absorption grid (grille) W Semiconductor wafer (wafer) 11 X-ray irradiation section 12 stages 13 Detection unit 14. Grid movement mechanism 100 Control Unit

Claims

1. X-ray irradiation area and A first grid, a second grid, each having a plurality of slits arranged in the direction of X-ray irradiation from the X-ray irradiation unit and arranged in a direction perpendicular to the X-ray irradiation axis, A holding part holds a substrate which is a first member and has a first mark formed on it, and a second member which is aligned with the substrate in the irradiation direction and has a second mark formed on it and is connected to or is planned to be connected to the substrate, as the object to be irradiated with X-rays, between the X-ray irradiation part and the first grating or between the first grating and the second grating in the irradiation direction, A detection unit that irradiates the object to be irradiated, the first grid and the second grid with X-rays, A grid moving mechanism that moves at least one of the first grid and the second grid as a moving grid in the direction of the arrangement of slits of the moving grid, An information acquisition unit obtains information regarding the positional relationship between the first mark and the second mark from images of the first mark and the second mark obtained based on the output from the detection unit, which is irradiated with X-rays through the moving grid at different positions from each other. An inspection device equipped with the following features.

2. The inspection apparatus according to claim 1, wherein a third grating having a plurality of slits arranged in a direction perpendicular to the irradiation axis is provided closer to the X-ray irradiation unit than the first grating and the object to be irradiated, and the X-rays are irradiated to the detection unit through the third grating.

3. Each of the first mark and the second mark includes a portion that forms a straight line. The inspection apparatus according to claim 1, wherein the holding portion holds the object to be irradiated with X-rays such that each of the aforementioned lines extends in a direction different from the arrangement direction of the slits in the moving grid.

4. The aforementioned straight line is, A straight line that forms part of the outline of the first mark or the second mark, Alternatively, the inspection apparatus according to claim 3, wherein the overlapping of the first mark and the second mark forms a group of straight lines arranged in a direction different from the extension direction in order to form a moiré pattern.

5. The inspection apparatus according to claim 3, wherein the holding part holds the object to be irradiated with X-rays during X-ray irradiation such that, when viewed in the direction of X-ray irradiation, the straight lines provided by each of the first and second marks form an angle of 45° with the arrangement direction of the slits of the moving grid.

6. The first mark comprises a first-determining mark and a first-determining mark, which have different shapes from each other. The second mark comprises a second priority mark and a second delay mark, which have different shapes from each other. The inspection apparatus according to claim 4, wherein the information acquisition unit acquires information on the positional relationship between the substrate and the second member based on the first post-determination mark and the second post-determination mark, according to whether the positional relationship between the first pre-determination mark and the second pre-determination mark is appropriate or not.

7. The first priority mark and the second priority mark each include the straight lines extending in different directions as part of the outer shape of the mark, The inspection apparatus according to claim 6, wherein each of the first post-determination marks and the second post-determination marks is a group of straight lines arranged in a direction different from the elongation direction in order to form a moiré pattern by the overlapping of the first post-determination mark and the second post-determination mark.

8. The outlines of the first priority mark and the second priority mark are square. The inspection device according to claim 7, wherein one of the first prior determination mark and the second prior determination mark is formed in a ring shape so as to surround the other in the image.

9. The first post-determination mark and the second post-determination mark each comprise one linear arrangement region and another linear arrangement region, where the extension directions of the lines are different from each other. The inspection apparatus according to claim 7, wherein the moiré pattern is formed by the overlap of each of the aforementioned linear arrangement regions and the overlap of each of the aforementioned other linear arrangement regions.

10. The extension direction of each line forming the group of lines in the first linear arrangement region with respect to the first mark, and the extension direction of the lines forming the group of lines in the other linear arrangement region, coincide with the extension direction of any of the lines forming the outer shape of the first mark for prior determination. The inspection apparatus according to claim 9, wherein the extension direction of each line forming the group of lines in the first linear arrangement region with respect to the second mark and the extension direction of the lines forming the group of lines in the other linear arrangement region coincide with the extension direction of any of the lines forming the outer shape of the first pre-determination mark.

11. The holding portion holds the first member and the second member such that the first pre-determination mark and the first post-determination mark, and the second pre-determination mark and the second post-determination mark are located within the irradiation area to which the X-rays are irradiated. The inspection apparatus according to claim 6, which acquires the image including the first pre-determination mark and the first post-determination mark, and the second pre-determination mark and the second post-determination mark in a single batch.

12. The holding portion comprises a first holding portion and a second holding portion, which each hold the first member and the second member, respectively. A relative movement mechanism is provided that moves the position on the first member to which the second member is to be connected relative to the position of the second member in a direction perpendicular to the X-ray irradiation axis, and changes the relative position of the first holding part and the second holding part so as to change the relative distance between the first member and the second member in the X-ray irradiation direction. The X-ray irradiation unit irradiates the first member and the second member, which are separated from each other, with X-rays. The inspection apparatus according to claim 1, further comprising a control unit that controls the operation of the relative movement mechanism so as to connect the first member and the second member based on information obtained regarding the positional relationship between the first mark and the second mark.

13. The inspection apparatus according to claim 1, wherein the second member is a chip configured as an electronic component.

14. A step of irradiating X-rays from an X-ray irradiation unit, in which a first grating and a second grating, each having a plurality of slits arranged in a direction perpendicular to the irradiation axis of the X-rays, are sequentially provided in the direction of X-ray irradiation from the X-ray irradiation unit, A holding step is to hold a substrate, which is a first member and has a first mark formed on it, and a second member, which is aligned with the substrate in the irradiation direction and has a second mark formed on it and is connected to or intended to be connected to the substrate, as the object to be irradiated with X-rays, between the X-ray irradiation unit and the first grating or between the first grating and the second grating in the irradiation direction, using a holding unit. The process of receiving the X-rays that have passed through the irradiated object, the first grating, and the second grating in a detection unit, The process of irradiating the detection unit with the X-rays via the irradiated object, the first grid, and the second grid, A step of moving at least one of the first and second grids as a moving grid using a grid moving mechanism in the direction of the arrangement of slits in the moving grid, The process involves obtaining information regarding the positional relationship between the first mark and the second mark from images of the first mark and the second mark obtained by the information acquisition unit based on the output from the detection unit, which is obtained based on images of the first mark and the second mark obtained based on images of the first mark and the second mark obtained based on images of the first mark and the second mark obtained based on the output from the detection unit, which is the output from the detection unit, An inspection method that includes the following features.

15. A third grating, comprising a plurality of slits arranged in a direction perpendicular to the irradiation axis, is provided closer to the X-ray irradiation section than the first grating and the irradiated object. The inspection method according to claim 14, wherein the step of irradiating the detection unit with X-rays is the step of irradiating the detection unit with X-rays through the third grating.

16. Each of the first mark and the second mark includes a portion that forms a straight line. The inspection method according to claim 14, wherein the holding step is a step in which the holding part holds the object to be irradiated with X-rays during X-ray irradiation such that each straight line extends in a direction different from the arrangement direction of the slits in the moving grid.

17. The first mark comprises a first-determining mark and a first-determining mark, which have different shapes from each other. The second mark comprises a second priority mark and a second delay mark, which have different shapes from each other. The process of obtaining the aforementioned information is: A first determination step of determining whether the positional relationship between the first determination mark and the second determination mark is appropriate, The inspection method according to claim 14, further comprising: a second determination step, performed in accordance with the first determination step, for determining whether the positional relationship between the substrate and the second member is appropriate based on the first post-determination mark and the second post-determination mark.

18. The holding step is a step of holding the first member and the second member, respectively, with the first holding part and the second holding part that constitute the holding part. The step of irradiating the detection unit with X-rays is a step of irradiating the first member and the second member, which are separated from each other, The inspection method according to claim 14, comprising the steps of: using a relative movement mechanism to move the position on the first member where the second member is to be connected and the position of the second member in a direction perpendicular to the X-ray irradiation axis, based on information obtained regarding the positional relationship between the first mark and the second mark; changing the relative positions of the first holding part and the second holding part so as to change the relative distance between the first member and the second member in the X-ray irradiation direction; and connecting the first member and the second member.

19. The holding step is a holding step in which the substrate, which is the first member, and the second member connected to the substrate are held by the holding part as objects to be irradiated with X-rays, If we define the substrate to which the second member is first attached as the first substrate and the substrate to which the second member is later attached as the second substrate, respectively, The inspection method according to claim 14, further comprising the step of determining the position in which the second member is connected to the second substrate based on information relating to the positional relationship between the first mark on the first substrate and the second mark on the second member connected to the first substrate.

20. The inspection apparatus according to claim 1, wherein the holding portion holds the substrate, which is the first member, and the second member connected to the substrate, as objects to be irradiated with X-rays, A connecting device for connecting the second member to the substrate before it is transported to the inspection device, The system includes a transport mechanism for transporting the substrate from the connecting device to the inspection device, The aforementioned connection device, A first holding part and a second holding part that hold the first member and the second member facing each other, The first holding portion and the second holding portion are provided with a relative movement mechanism that connects the first member and the second member by changing the relative position and distance in a direction intersecting the opposing direction between the first member and the second member, respectively. If we define the substrate to which the second member is first attached as the first substrate and the substrate to which the second member is later attached as the second substrate, respectively, A component connection system to a substrate, wherein the relative movement mechanism determines the position at which the second component is connected to the second substrate based on information regarding the positional relationship between the first mark on the first substrate and the second mark on the second component connected to the first substrate.

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