Substrate processing method and substrate processing apparatus

Abstract

Ozone water is used to efficiently process circuit boards. [Solution] The substrate processing method includes an immersion step and a heating step. In the immersion step, the substrate is immersed in ozonated water. In the heating step, while the substrate is immersed in ozonated water, the substrate is heated by irradiating it with light of a wavelength that can penetrate the ozonated water.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method and a substrate processing apparatus.

Background Art

[0002] Conventionally, a technique of processing a substrate such as a semiconductor wafer (hereinafter also referred to as a wafer) with ozone water while irradiating the substrate with ultraviolet light is known (see Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of efficiently processing a substrate with ozone water.

Means for Solving the Problems

[0005] A substrate processing method according to an aspect of the present disclosure includes an immersion step and a heating step. The immersion step immerses the substrate in ozone water. The heating step irradiates the substrate with light having a wavelength that can penetrate ozone water in a state where the substrate is immersed in ozone water to heat the substrate.

Effects of the Invention

[0006] According to the present disclosure, a substrate can be efficiently processed with ozone water.

Brief Description of the Drawings

[0007] [Figure 1] FIG. 1 is a diagram showing the configuration of a substrate processing apparatus according to an embodiment. [Figure 2]Figure 2 is a cross-sectional view of the processing tank according to the embodiment, viewed from the positive X-axis direction to the negative X-axis direction. [Figure 3] Figure 3 shows an example of the relationship between the wavelength (nm) of light irradiated onto the wafer from the light irradiation unit and the absorption rate (%) of the light by the wafer. [Figure 4] Figure 4 is a flowchart showing the substrate processing procedure performed by the substrate processing apparatus according to the embodiment. [Figure 5] Figure 5 is a flowchart showing the substrate processing procedure performed by the substrate processing apparatus according to the modified embodiment 1. [Figure 6] Figure 6 is a flowchart showing the substrate processing procedure performed by the substrate processing apparatus according to the modified embodiment 2. [Figure 7] Figure 7 is a cross-sectional view of the processing tank according to modified embodiment 3, viewed from the positive X-axis direction to the negative X-axis direction. [Figure 8] Figure 8 is a flowchart showing the substrate processing procedure performed by the substrate processing apparatus according to the modified embodiment 3. [Modes for carrying out the invention]

[0008] The embodiments for implementing the substrate processing method and substrate processing apparatus according to this disclosure (hereinafter referred to as "embodiments") will be described in detail below with reference to the drawings. However, this disclosure is not limited by these embodiments. Furthermore, it should be noted that the drawings are schematic, and the dimensional relationships and ratios of each element may differ from reality. In addition, there may be differences in dimensional relationships and ratios between drawings.

[0009] Furthermore, in the embodiments described below, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not require strict adherence to "constant," "orthogonal," "perpendicular," or "parallel" conditions. In other words, each of the above expressions allows for deviations, for example, in manufacturing accuracy or installation accuracy.

[0010] In addition, in each of the drawings referred to below, in order to make the description easier to understand, there may be cases where an orthogonal coordinate system is shown that defines the X-axis direction, Y-axis direction, and Z-axis direction that are orthogonal to each other, and the positive Z-axis direction is the vertically upward direction. Also, the rotation direction about the vertical axis may be referred to as the θ direction.

[0011] Conventionally, there is a known technique of treating a substrate such as a semiconductor wafer (hereinafter also referred to as a wafer) with ozone water while irradiating ultraviolet light to the substrate. However, in the above-described conventional technique, there was room for further improvement in efficiently treating the substrate with ozone water.

[0012] Therefore, a technique that can overcome the above problems and efficiently treat a substrate with ozone water is expected.

[0013] <Configuration of Substrate Processing Apparatus> The configuration of the substrate processing apparatus according to the embodiment will be described with reference to FIG. 1. FIG. 1 is a diagram showing the configuration of the substrate processing apparatus according to the embodiment.

[0014] As shown in FIG. 1, the substrate processing apparatus 1 includes a processing liquid generation unit 10 and a substrate processing unit 30. The processing liquid generation unit 10 sequentially generates various processing liquids such as ozone water, rinse liquid, and cleaning liquid. The substrate processing unit 30 performs a series of substrate processes including ozone water treatment, rinse treatment, and cleaning treatment on the wafer W using the various processing liquids sequentially generated in a single processing tank 31.

[0015] The substrate processing apparatus 1 also includes a processing liquid supply path 21 provided from the processing liquid generation unit 10 to the substrate processing unit 30. Such a processing liquid supply path 21 connects between the DIW supply source 22a of the processing liquid generation unit 10 and the substrate processing unit 30.

[0016] The processing liquid supply path 21 is configured by connecting a first supply path 22, a mixer 23, and a second supply path 24 in this order.

[0017] The first supply path 22 supplies to the mixer 23 DIW (DeIonized Water) which is the raw material of ozone water, DIW as the rinse liquid, and DIW which is the raw material of SC1 (aqueous solution containing ammonia and hydrogen peroxide) as the cleaning liquid. The first supply path 22 has, in order from the upstream side, a DIW supply source 22a, a deaeration module 22b, a cooler 22c, a valve 22d, a constant-pressure valve 22e, and a flow meter 22f.

[0018] The DIW supply source 22a is, for example, a tank for storing DIW. The deaeration module 22b removes dissolved gases such as nitrogen dissolved in the DIW supplied from the DIW supply source 22a. By removing the dissolved gas contained in the DIW with such a deaeration module 22b, ozone gas can be efficiently dissolved in the DIW.

[0019] The cooler 22c cools the DIW flowing through the first supply path 22 to a given temperature (for example, 10°C to 20°C). By cooling the DIW with such a cooler 22c, ozone gas can be efficiently dissolved in the DIW.

[0020] The constant-pressure valve 22e adjusts the flow rate of the DIW supplied to the mixer 23 based on the flow rate of the DIW measured by the flow meter 22f. That is, the constant-pressure valve 22e performs feedback control based on the flow rate of the DIW measured by the flow meter 22f.

[0021] The mixer 23 is connected to the first supply path 22 on the upstream side and to the second supply path 24 on the downstream side. Also, an acid-based chemical supply path 26 is connected to the mixer 23.

[0022] The acid-based chemical supply path 26 supplies acid-based chemicals such as organic acids (citric acid, acetic acid, etc.), hydrochloric acid, and sulfuric acid to the mixer 23. In the embodiment, by supplying an acid-based chemical to the DIW and adjusting the pH of the DIW to acidic, the concentration of ozone dissolved in the DIW can be increased.

[0023] The acid-based chemical supply line 26 includes, in order from upstream, an acid-based chemical supply source 26a, a valve 26b, a constant pressure valve 26c, and a flow meter 26d. The acid-based chemical supply source 26a is, for example, a cabinet or circulation line capable of generating the acid-based chemical.

[0024] The constant pressure valve 26c adjusts the flow rate of the acidic chemical solution supplied to the mixer 23 based on the flow rate of the acidic chemical solution measured by the flow meter 26d. In other words, the constant pressure valve 26c performs feedback control based on the flow rate of the acidic chemical solution measured by the flow meter 26d.

[0025] An ozone gas supply line 41 is connected downstream of the connection point between the mixer 23 and the acid-based chemical supply line 26.

[0026] The ozone gas supply channel 41 supplies ozone gas to the mixer 23. The ozone gas supply channel 41 has, in order from the upstream side, an ozone gas generation unit 42 and a valve 43. A check valve may be provided between the valve 43 and the mixer 23.

[0027] The ozone gas generation unit 42 generates ozone gas from oxygen gas using known techniques. The oxygen gas that serves as the raw material for ozone gas is supplied to the ozone gas generation unit 42 from the oxygen gas supply passage 44. The oxygen gas supply passage 44 has, in order from upstream, an oxygen gas supply source 44a, a constant pressure valve 44b, and a valve 44c. The oxygen gas supply source 44a is, for example, a tank for storing oxygen gas.

[0028] Although not shown in Figure 1, the ozone gas generation unit 42 is connected to a cooling water supply unit that supplies cooling water and a cooling water discharge unit that discharges the used cooling water.

[0029] Downstream from the connection point between the mixer 23 and the ozone gas supply line 41, an ammonia water supply line 51 is connected.

[0030] The ammonia water supply channel 51 supplies ammonia water, which is the raw material for SC1 as a cleaning solution, to the mixer 23. The ammonia water supply channel 51 has, in order from upstream, an ammonia water supply source 51a, a valve 51b, a constant pressure valve 51c, and a flow meter 51d. The ammonia water supply source 51a is, for example, a tank for storing ammonia water.

[0031] The constant pressure valve 51c adjusts the flow rate of ammonia water supplied to the mixer 23 based on the flow rate of ammonia water measured by the flow meter 51d. In other words, the constant pressure valve 51c performs feedback control based on the flow rate of ammonia water measured by the flow meter 51d.

[0032] A hydrogen peroxide water supply channel 52 is connected downstream of the connection point with the ammonia water supply channel 51 in the mixer 23.

[0033] The hydrogen peroxide supply channel 52 supplies hydrogen peroxide, which is the raw material for SC1 as a cleaning solution, to the mixer 23. The hydrogen peroxide supply channel 52 has, in order from upstream, a hydrogen peroxide supply source 52a, a valve 52b, a constant pressure valve 52c, and a flow meter 52d. The hydrogen peroxide supply source 52a is, for example, a tank for storing hydrogen peroxide.

[0034] The constant pressure valve 52c adjusts the flow rate of hydrogen peroxide solution supplied to the mixer 23 based on the flow rate of hydrogen peroxide solution measured by the flow meter 52d. In other words, the constant pressure valve 52c performs feedback control based on the flow rate of hydrogen peroxide solution measured by the flow meter 52d.

[0035] Mixer 23 selectively mixes other chemicals or gases with the DIW supplied from the first supply channel 22 to sequentially generate various treatment solutions. Specifically, mixer 23 can generate ozonated water by mixing the DIW supplied from the first supply channel 22 with an acidic chemical supplied from the acidic chemical supply channel 26 and ozone gas supplied from the ozone gas supply channel 41. Mixer 23 can also generate SC1 by mixing the DIW supplied from the first supply channel 22 with ammonia water supplied from the ammonia water supply channel 51 and hydrogen peroxide water supplied from the hydrogen peroxide water supply channel 52. Furthermore, mixer 23 can also allow the DIW supplied from the first supply channel 22 to flow downstream as a rinsing solution. A second supply channel 24 is connected to the downstream side of this mixer 23.

[0036] The second supply channel 24 is located between the mixer 23 of the processing liquid generation unit 10 and the substrate processing unit 30, and supplies various processing liquids supplied from the mixer 23 to the first nozzle 33 of the substrate processing unit 30, which will be described later. Specifically, the second supply channel 24 sequentially supplies ozonated water, DIW as a rinsing liquid, and SC1 as a cleaning liquid to the first nozzle 33.

[0037] The second supply channel 24 includes, in order from upstream, a constant pressure valve 24a, a filter 24b, a flow meter 24c, and a valve 24d. The constant pressure valve 24a adjusts the flow rate of the treated liquid flowing through the second supply channel 24 based on the flow rate of ozonated water measured by the flow meter 24c. In other words, the constant pressure valve 24a performs feedback control based on the flow rate of the treated liquid measured by the flow meter 24c.

[0038] The filter 24b removes contaminants such as particles contained in the various processing liquids flowing through the second supply channel 24.

[0039] Upstream of the constant pressure valve 24a in the second supply channel 24, the third supply channel 60 branches off from the second supply channel 24 and connects to the second nozzle 34 of the substrate processing unit 30, which will be described later. The third supply channel 60 supplies ozonated water to the second nozzle 34.

[0040] The third supply channel 60 has, in order from upstream, a valve 61, a filter 62, a pump 63 (an example of a pressurizing unit), a flow meter 64, and a throttle valve 65. The filter 62 removes contaminants such as particles contained in the ozonated water flowing through the third supply channel 60.

[0041] Pump 63 pressurizes the ozonated water flowing through the third supply channel 60 to a given pressure higher than atmospheric pressure. The pressurized ozonated water is supplied to the second nozzle 34 via the third supply channel 60. In this way, by pressurizing the ozonated water, ozonated water with a given ozone concentration can be efficiently produced.

[0042] This is because the mole fraction M of ozone gas dissolved in the raw material liquid DIW is estimated to follow Henry's Law, shown in equation (1) below, and according to Henry's Law, the mole fraction M of dissolved ozone gas is proportional to the partial pressure P of ozone in the gas. M=H -1 ·P ···(1) H: Henry's constant

[0043] Here, the "given ozone concentration" refers to, for example, the ozone concentration that can remove (peel off) the resist film formed on the wafer W, and is, for example, between 10 ppm and 200 ppm. The "given pressure" refers to, for example, the pressure that can maintain the ozone concentration of the ozonated water at the given ozone concentration, and is, for example, in the range of 0.6 MPa to 2.0 MPa.

[0044] The throttle valve 65 is located downstream of the pump 63 in the third supply channel 60 and adjusts the pressure of the ozonated water pressurized by the pump 63.

[0045] The substrate processing unit 30 comprises a processing tank 31, a substrate holding unit 32, a first nozzle 33, a second nozzle 34 (an example of an ozone water supply nozzle), a third nozzle 35 (an example of a gas supply nozzle), and a liquid receiving unit 36.

[0046] The processing tank 31 is a box-shaped tank that opens upwards, and various processing liquids are sequentially stored inside it. Specifically, ozonated water, DIW as a rinsing liquid, or SC1 as a cleaning liquid are sequentially stored in the processing tank 31. One wafer W is immersed in the processing liquid stored in the processing tank 31. Because the processing tank 31 opens upwards, the ease of transporting the wafer W into the processing tank 31 can be improved.

[0047] Furthermore, the processing tank 31 is connected to the drain section DR via a valve 37. This allows the control unit 71 to control the valve 37 when switching between the processing liquids used in the ozone water treatment, rinsing treatment, and washing treatment of the wafer W, thereby discharging each processing liquid used in the ozone water treatment, rinsing treatment, and washing treatment to the drain section DR.

[0048] Outside the processing tank 31, a liquid receiving section 36 is positioned to surround the processing tank 31. The liquid receiving section 36 is a container that receives the processing liquid flowing out from the opening of the processing tank 31. The liquid receiving section 36 is connected to a drain section DR, allowing the processing liquid flowing out from the opening of the processing tank 31 to be discharged into the drain section DR.

[0049] The substrate holding unit 32 holds one wafer W in an upright position. The substrate holding unit 32 is fixed inside the processing tank 31 and holds the wafer W in an immersion position where the entire wafer W is submerged in the processing liquid. The substrate holding unit 32 can receive one wafer W from a substrate transport device (not shown) that transports one wafer W and place it in the immersion position.

[0050] The first nozzle 33 is positioned inside the processing tank 31 and supplies ozonated water, DIW as a rinsing solution, or SC1 as a cleaning solution to the processing tank 31. The first nozzle 33 extends along the thickness direction (Y-axis direction) of a single wafer W and discharges ozonated water, DIW as a rinsing solution, or SC1 as a cleaning solution from a plurality of discharge ports provided along the thickness direction of a single wafer W.

[0051] The first nozzle 33 is connected to the second supply passage 24 of the processing liquid supply passage 21, and discharges ozonated water, DIW as a rinsing liquid, or SC1 as a cleaning liquid supplied from the second supply passage 24 through multiple discharge ports.

[0052] The first nozzle 33 can supply ozonated water to the treatment tank 31 at a flow rate greater than that supplied to the treatment tank 31 from the second nozzle 34. For this reason, the discharge port of the first nozzle 33 has a larger opening diameter than the discharge port of the second nozzle 34.

[0053] The second nozzle 34 is positioned below the first nozzle 33 inside the processing tank 31 and supplies pressurized ozonated water to the processing tank 31. The second nozzle 34 extends along the thickness direction (Y-axis direction) of a single wafer W and discharges pressurized ozonated water from multiple discharge ports provided along the thickness direction of a single wafer W.

[0054] The second nozzle 34 is connected to the third supply passage 60 of the processing liquid supply passage 21 and discharges pressurized ozonated water supplied from the third supply passage 60 through multiple supply ports.

[0055] The third nozzle 35 is positioned below the second nozzle 34 inside the processing tank 31 and supplies gas (for example, nitrogen gas) to the ozonated water stored in the processing tank 31. For example, the third nozzle 35 discharges gas bubbles into the ozonated water stored in the processing tank 31. The third nozzle 35 extends along the thickness direction (Y-axis direction) of a single wafer W and discharges gas from a plurality of discharge ports provided along the thickness direction of a single wafer W.

[0056] The third nozzle 35 is connected to the gas supply source 35a via a gas supply passage 38. A valve 35b is provided in the gas supply passage 38. The third nozzle 35 discharges gas (for example, nitrogen gas) supplied from the gas supply source 35a from multiple supply ports. The third nozzle 35 discharges gas bubbles upward into the ozonated water stored in the treatment tank 31, for example, creating an upward flow of ozonated water within the treatment tank 31.

[0057] The substrate processing apparatus 1 according to this embodiment can supply a fast-flowing stream of ozonated water to the surface of a wafer W located inside the processing tank 31 by discharging gas from a third nozzle 35. This improves the peelability of the resist film on the surface of the wafer W. The gas discharged from the third nozzle 35 is not limited to nitrogen gas, but may be at least one of nitrogen gas, oxygen gas, ozone gas, and air.

[0058] Furthermore, the substrate processing apparatus 1 further includes a control device 70. The control device 70 controls the operation of each part of the substrate processing apparatus 1. The control device 70 is, for example, a computer and comprises a control unit 71 and a storage unit 72.

[0059] The control unit 71 is a controller. The control unit 71 is implemented, for example, by a CPU (Central Processing Unit) or MPU (Micro Processing Unit) executing various programs stored in the internal memory of the control device 70 using RAM as the working area. Alternatively, the control unit 71 may be implemented by an integrated circuit such as an ASIC (Application Specific Integrated Circuit) or FPGA (Field Programmable Gate Array).

[0060] The control unit 71 has a computer-readable storage medium. The storage medium stores the program that controls various processes performed in the substrate processing device 1. The program may have been stored on a computer-readable storage medium or may have been installed on the control unit 71's storage medium from another storage medium. Examples of computer-readable storage mediums include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0061] The memory unit 72 is implemented by, for example, semiconductor memory elements such as RAM (Random Access Memory) or flash memory, or by storage devices such as hard disks or optical discs.

[0062] <Light Irradiation Unit Configuration> The processing tank 31 is equipped with a light irradiation unit that irradiates the wafer W with light. Conventionally, there is a technique in which the wafer is treated with ozonated water while being irradiated with ultraviolet light.

[0063] However, with the technology described above, there was a risk that the ultraviolet light irradiated onto the wafer would be absorbed by the ozonated water, causing its temperature to rise. When the temperature of the ozonated water rises, the ozone may decompose (i.e., the ozonated water becomes inactive), and the concentration of ozone in the ozonated water may decrease.

[0064] Therefore, the substrate processing apparatus 1 according to this embodiment heats the wafer W by irradiating it with light of a wavelength that can penetrate the ozonated water using a light irradiation unit provided in the processing tank 31. This reduces the temperature rise of the ozonated water compared to when ultraviolet light is irradiated onto the wafer W. Thus, the wafer W can be heated to a given temperature while suppressing the decrease in ozone concentration caused by the temperature rise of the ozonated water. As a result, the substrate processing apparatus 1 according to this embodiment can efficiently process the wafer W with ozonated water.

[0065] The configuration of the processing tank 31 and the light irradiation unit will be described with reference to Figure 2. Figure 2 is a cross-sectional view of the processing tank 31 according to the embodiment, viewed from the positive X-axis direction to the negative X-axis direction. For ease of understanding, the first nozzle 33 is omitted in Figure 2.

[0066] As shown in Figure 2, the light irradiation unit 80 is provided in the processing tank 31. The light irradiation unit 80 is a light source such as a light-emitting diode (LED). The light irradiation unit 80 is provided in the processing tank 31 facing the main surface of the wafer W. The main surface of the wafer W is, for example, the surface on which the resist film of the wafer W is formed. The light irradiation unit 80 may also be provided in the processing tank 31 facing at least one of the main surface of the wafer W and the back surface opposite to the main surface. The light irradiation unit 80 irradiates the wafer W with light of a wavelength that can penetrate the ozonated water.

[0067] Figure 3 shows an example of the relationship between the wavelength (nm) of light irradiated onto the wafer W from the light irradiation unit 80 and the light absorption rate (%) of the wafer W. As shown in Figure 3, when the wavelength of light irradiated onto the wafer W from the light irradiation unit 80 is 350 nm or more and 1100 nm or less, the light absorption rate of the wafer W can be increased to approximately 40% or more. However, when the wavelength of light irradiated onto the wafer W from the light irradiation unit 80 is greater than 600 nm, the light absorption rate of the ozonated water increases and the temperature of the ozonated water around the wafer W rises. Therefore, from the viewpoint of selectively heating the surface of the wafer W while suppressing the temperature rise of the ozonated water around the wafer W, it is preferable that the wavelength of light irradiated onto the wafer W from the light irradiation unit 80 is 350 nm or more and 600 nm or less. Hereinafter, light with a wavelength of 350 nm or more and 600 nm or less will be referred to as "specific wavelength light". The light irradiation unit 80 irradiates the wafer W with specific wavelength light.

[0068] Returning to the explanation of Figure 2, the processing tank 31 has a light-transmitting portion 31a on one of the two side walls facing the main surface and back surface of the wafer W. The light-transmitting portion 31a is in contact with ozonated water and transmits light of a specific wavelength. The light-transmitting portion 31a is formed of a material that can transmit light of a specific wavelength and has high corrosion resistance to processing liquids such as ozonated water. The light-transmitting portion 31a has higher corrosion resistance to processing liquids such as ozonated water than other parts of the processing tank 31. For example, quartz can be used as the material for forming the light-transmitting portion 31a. The light irradiation portion 80 is arranged on the outer surface 31a1 of the light-transmitting portion 31a opposite to the inner surface that is in contact with the ozonated water.

[0069] In this way, by positioning the light irradiation unit 80 on the outer surface 31a1 of the light-transmitting portion 31a provided on one of the two side walls of the processing tank 31 that face the main surface and back surface of the wafer W, specific wavelength light from the light irradiation unit 80 can be efficiently irradiated onto the main surface of the wafer W. Therefore, the main surface of the wafer W can be efficiently heated.

[0070] <Procedure for processing circuit boards> Next, the substrate processing procedure according to the embodiment will be described with reference to Figure 4. Figure 4 is a flowchart of the substrate processing procedure performed by the substrate processing apparatus 1 according to the embodiment. Each processing procedure shown in Figure 4 is performed according to the control of the control unit 71.

[0071] Before the start of the series of substrate processing shown in Figure 4, no processing liquid is stored in the processing tank 31. In other words, before the start of the series of substrate processing, the processing tank 31 is empty.

[0072] As shown in Figure 4, the substrate processing apparatus 1 first supplies ozonated water from the first nozzle 33 (step S101). Specifically, the control unit 71 controls the processing liquid generation unit 10 to open valves 22d, 24d, 26b, 43, and 44c. As a result, the ozonated water generated in the mixer 23 is supplied to the first nozzle 33 via the second supply passage 24. The ozonated water is then discharged from the discharge port of the first nozzle 33 into the processing tank 31 and stored in the processing tank 31. After a predetermined time has elapsed, the control unit 71 controls the processing liquid generation unit 10 to close valves 22d, 24d, 26b, 43, and 44c. As a result, the supply of ozonated water from the first nozzle 33 is stopped.

[0073] Next, the substrate processing apparatus 1 loads the wafer W into the processing tank 31 (step S102). Specifically, the control unit 71 controls the substrate transport device (not shown) that transports the wafer W to transfer the wafer W to the substrate holding unit 32 located inside the processing tank 31. As a result, the wafer W is placed in an immersion position within the processing tank 31. In other words, the wafer W is immersed in the ozonated water stored in the processing tank 31.

[0074] Next, the control unit 71 controls the light irradiation unit 80 to irradiate the wafer W with light of a wavelength that can penetrate the ozonated water, i.e., light of a specific wavelength, and heat the wafer W to a given temperature (step S103).

[0075] In this embodiment, by immersing the wafer W in ozonated water and irradiating the wafer W with light of a specific wavelength to heat the wafer W, it is possible to heat the wafer W to a given temperature while suppressing the decrease in ozone concentration caused by the temperature rise of the ozonated water. As a result, according to the substrate processing apparatus 1 of this embodiment, the wafer W can be processed efficiently with ozonated water.

[0076] Next, the substrate processing apparatus 1 supplies pressurized ozonated water from the second nozzle 34 (step S104). Specifically, the control unit 71 controls the processing liquid generation unit 10 to open valves 22d, 26b, 43, 44c, and 61, and controls the pump 63 to pressurize the ozonated water flowing through the third supply passage 60. As a result, the ozonated water generated in the mixer 23 is pressurized in the third supply passage 60, and this pressurized ozonated water is supplied to the second nozzle 34 via the third supply passage 60. Then, the pressurized ozonated water is discharged from the discharge port of the second nozzle 34 into the processing tank 31, thereby pressurizing the ozonated water stored in the processing tank 31.

[0077] In this embodiment, pressurized ozonated water is supplied to the processing tank 31 while the wafer W is heated by irradiating it with light of a specific wavelength. This makes it possible to heat the wafer W while suppressing the decrease in the ozone concentration of the ozonated water around the wafer W due to a decrease in the pressure of the ozonated water in the processing tank 31.

[0078] In other words, in this embodiment, by increasing the pressure of the ozonated water in the processing tank 31, the concentration of ozonated water around the wafer W can be maintained, thus allowing the wafer W to be processed more efficiently with ozonated water.

[0079] Furthermore, in this embodiment, a throttle valve 65 is used to adjust the pressure of the ozonated water pressurized by the pump 63, which is located downstream of the pump 63 in the ozonated water supply path (third supply path 60) to the second nozzle 34. This allows the pressure of the ozonated water to be maintained just before it is supplied from the second nozzle 34 into the processing tank 31, thereby enabling more efficient processing of the wafer W with ozonated water.

[0080] Next, the substrate processing apparatus 1 supplies gas from the third nozzle 35 (step S105). Specifically, the control unit 71 opens the valve 35b. As a result, gas bubbles are discharged from the third nozzle 35 into the ozonated water stored in the processing tank 31.

[0081] Thus, in this embodiment, by discharging gas from the third nozzle 35, a fast flow of ozonated water can be supplied to the surface of a wafer W located inside the processing tank 31. This improves the peelability of the resist film on the surface of the wafer W.

[0082] Next, the control unit 71 stops the supply of ozonated water from the second nozzle 34 and the supply of gas from the third nozzle 35 (step S106).

[0083] Next, the control unit 71 determines whether or not the ozonated water treatment of the wafer W is complete (step S107). For example, the control unit 71 may terminate the ozonated water treatment of the wafer W when the number of repetitions of the process in steps S103 to S106 reaches a predetermined number.

[0084] If the ozonated water treatment of the wafer W is not completed in step S107 (step S107No), the control unit 71 returns the process to step S103 and continues the ozonated water treatment.

[0085] On the other hand, if it is determined that the ozonated water treatment of the wafer W is complete (step S107 Yes), the control unit 71 stops irradiating the wafer W with light of a specific wavelength (step S108).

[0086] Subsequently, the control unit 71 opens the valve 37 for a predetermined time to discharge ozonated water from the treatment tank 31 (step S109).

[0087] Next, the substrate processing apparatus 1 performs a rinsing process on the wafer W (step S110). Specifically, the control unit 71 opens valves 22d and 24d. As a result, DIW is stored in the processing tank 31 as a rinsing solution, and the wafer W is immersed in the DIW. This removes ozonated water from the wafer W.

[0088] Subsequently, the control unit 71 closes valves 22d and 24d, and opens valve 37 for a predetermined time to discharge DIW from the processing tank 31.

[0089] Next, the substrate processing apparatus 1 performs a cleaning process on the wafer W (step S111). Specifically, the control unit 71 opens valves 22d, 24d, 51b, and 52b. As a result, SC1, which is used as a cleaning solution, is stored in the processing tank 31, and the wafer W is immersed in SC1. This removes foreign matter such as particles from the wafer W.

[0090] Subsequently, the control unit 71 closes valves 22d, 24d, 51b, and 52b, and opens valve 37 for a predetermined time to discharge SC1 from the processing tank 31.

[0091] Next, the substrate processing apparatus 1 performs a rinsing process on the wafer W (step S112). Specifically, the control unit 71 opens valves 22d and 24d. As a result, DIW is stored in the processing tank 31 as a rinsing solution, and the wafer W is immersed in the DIW. This removes SC1 from the wafer W.

[0092] Next, the control unit 71 controls the substrate transport device (not shown) to remove the wafer W from the processing tank 31 (step S113), thereby completing the series of substrate processing operations.

[0093] <Example 1> Next, various modifications of the substrate processing apparatus 1 according to the embodiment will be described with reference to Figures 5 to 8. Figure 5 is a flowchart showing the substrate processing procedure performed by the substrate processing apparatus 1 according to Modification 1 of the embodiment. Note that the configuration of the substrate processing apparatus 1 according to Modification 1 is the same as that of the embodiment, so its description will be omitted here.

[0094] Before the start of the series of substrate processing shown in Figure 5, no processing liquid is stored in the processing tank 31. In other words, before the start of the series of substrate processing, the processing tank 31 is empty.

[0095] As shown in Figure 5, the substrate processing apparatus 1 first supplies ozonated water from the first nozzle 33 (step S201). Specifically, the control unit 71 controls the processing liquid generation unit 10 to open valves 22d, 24d, 26b, 43, and 44c. As a result, the ozonated water generated in the mixer 23 is supplied to the first nozzle 33 via the second supply passage 24. The ozonated water is then discharged from the discharge port of the first nozzle 33 into the processing tank 31 and stored in the processing tank 31. After a predetermined time has elapsed, the control unit 71 controls the processing liquid generation unit 10 to close valves 22d, 24d, 26b, 43, and 44c. As a result, the supply of ozonated water from the first nozzle 33 is stopped.

[0096] Next, the substrate processing apparatus 1 loads the wafer W into the processing tank 31 (step S202). Specifically, the control unit 71 controls the substrate transport device (not shown) that transports the wafer W to transfer the wafer W to the substrate holding unit 32 located inside the processing tank 31. As a result, the wafer W is placed in an immersion position within the processing tank 31. In other words, the wafer W is immersed in the ozonated water stored in the processing tank 31.

[0097] Next, the control unit 71 controls the light irradiation unit 80 to irradiate the wafer W with light of a wavelength that can penetrate the ozonated water, i.e., light of a specific wavelength, and heat the wafer W to a given temperature (step S203).

[0098] In Modification 1, by immersing the wafer W in ozonated water and irradiating the wafer W with light of a specific wavelength to heat the wafer W, it is possible to heat the wafer W to a given temperature while suppressing the decrease in ozone concentration caused by the temperature rise of the ozonated water. As a result, the substrate processing apparatus 1 according to Modification 1 allows for efficient processing of the wafer W with ozonated water.

[0099] Next, the substrate processing apparatus 1 supplies pressurized ozonated water from the second nozzle 34 (step S204). Specifically, the control unit 71 controls the processing liquid generation unit 10 to open valves 22d, 26b, 43, 44c, and 61, and controls the pump 63 to pressurize the ozonated water flowing through the third supply passage 60. As a result, the ozonated water generated in the mixer 23 is pressurized in the third supply passage 60, and this pressurized ozonated water is supplied to the second nozzle 34 via the third supply passage 60. Then, the pressurized ozonated water is discharged from the discharge port of the second nozzle 34 into the processing tank 31, thereby pressurizing the ozonated water stored in the processing tank 31.

[0100] In this embodiment, pressurized ozonated water is supplied to the processing tank 31 while the wafer W is heated by irradiating it with light of a specific wavelength. This makes it possible to heat the wafer W while suppressing the decrease in the ozone concentration of the ozonated water around the wafer W due to a decrease in the pressure of the ozonated water in the processing tank 31.

[0101] In other words, in Modification 1, by increasing the pressure of the ozonated water in the processing tank 31, the concentration of ozonated water around the wafer W can be maintained, thus allowing the wafer W to be processed more efficiently with ozonated water.

[0102] Furthermore, in the modified example 1, a throttle valve 65 located downstream of the pump 63 in the ozone water supply path (third supply path 60) to the second nozzle 34 is used to adjust the pressure of the ozone water pressurized by the pump 63. This allows the pressure of the ozone water to be maintained just before it is supplied from the second nozzle 34 into the processing tank 31, thereby enabling more efficient processing of the wafer W with ozone water.

[0103] Next, the substrate processing apparatus 1 supplies gas from the third nozzle 35 (step S205). Specifically, the control unit 71 opens the valve 35b. As a result, gas bubbles are discharged from the third nozzle 35 into the ozonated water stored in the processing tank 31.

[0104] Thus, in the modified example 1, by discharging gas from the third nozzle 35, a fast-flowing stream of ozonated water can be supplied to the surface of a single wafer W located inside the processing tank 31. This improves the peelability of the resist film on the surface of the wafer W.

[0105] Next, the control unit 71 determines whether or not the ozonated water treatment of the wafer W is complete (step S206). For example, the control unit 71 may terminate the ozonated water treatment of the wafer W when a predetermined amount of time has elapsed since the wafer W was brought into the treatment tank 31 in step S102.

[0106] If the ozonated water treatment of the wafer W is not completed in step S106 (step S206No), the control unit 71 returns the process to step S206 and continues the ozonated water treatment.

[0107] On the other hand, if it is determined that the ozonated water treatment of the wafer W is complete (step S206 Yes), the control unit 71 stops irradiating the wafer W with light of a specific wavelength, supplying ozonated water from the second nozzle 34, and supplying gas from the third nozzle 35 (step S207).

[0108] Subsequently, the control unit 71 opens the valve 37 for a predetermined time to discharge ozonated water from the treatment tank 31 (step S208).

[0109] Next, the substrate processing apparatus 1 performs a rinsing process on the wafer W (step S209). Specifically, the control unit 71 opens valves 22d and 24d. As a result, DIW is stored in the processing tank 31 as a rinsing solution, and the wafer W is immersed in the DIW. This removes ozonated water from the wafer W.

[0110] Subsequently, the control unit 71 closes valves 22d and 24d, and opens valve 37 for a predetermined time to discharge DIW from the processing tank 31.

[0111] Next, the substrate processing apparatus 1 performs a cleaning process on the wafer W (step S210). Specifically, the control unit 71 opens valves 22d, 24d, 51b, and 52b. As a result, SC1, which is used as a cleaning solution, is stored in the processing tank 31, and the wafer W is immersed in SC1. This removes foreign matter such as particles from the wafer W.

[0112] Subsequently, the control unit 71 closes valves 22d, 24d, 51b, and 52b, and opens valve 37 for a predetermined time to discharge SC1 from the processing tank 31.

[0113] Next, the substrate processing apparatus 1 performs a rinsing process on the wafer W (step S211). Specifically, the control unit 71 opens valves 22d and 24d. As a result, DIW is stored in the processing tank 31 as a rinsing solution, and the wafer W is immersed in the DIW. This removes SC1 from the wafer W.

[0114] Next, the control unit 71 controls the substrate transport device (not shown) to remove the wafer W from the processing tank 31 (step S212), thereby completing the series of substrate processing operations.

[0115] <Modification 2> Figure 6 is a flowchart showing the substrate processing procedure performed by the substrate processing apparatus 1 according to Modification 2 of the embodiment. Note that the configuration of the substrate processing apparatus 1 according to Modification 1 is the same as in the embodiment, so its description is omitted here. Also, in Modification 2, the same reference numerals are used for processes that are the same as in Modification 1, and their detailed descriptions are omitted.

[0116] As shown in Figure 6, the substrate processing apparatus 1 first supplies ozonated water from the first nozzle 33 (step S201). Next, the substrate processing apparatus 1 loads the wafer W into the processing tank 31 (step S202).

[0117] Next, the control unit 71 controls the light irradiation unit 80 to irradiate the wafer W with light of a wavelength that can penetrate the ozonated water, i.e., light of a specific wavelength, and heat the wafer W to a given temperature (step S301).

[0118] Next, the substrate processing apparatus 1 supplies pressurized ozonated water from the second nozzle 34 (step S302). Subsequently, the control unit 71 stops irradiating the wafer W with light of a specific wavelength and stops supplying ozonated water from the second nozzle 34 (step S303).

[0119] Next, the substrate processing apparatus 1 supplies gas from the third nozzle 35 (step S304). After that, the control unit 71 stops supplying gas from the third nozzle 35 (step S305).

[0120] Next, the control unit 71 determines whether or not the ozonated water treatment of the wafer W is complete (step S306). For example, the control unit 71 may terminate the ozonated water treatment of the wafer W when a predetermined amount of time has elapsed since the wafer W was brought into the treatment tank 31 in step S202.

[0121] If the ozonated water treatment of the wafer W is not completed in step S306 (step S306No), the control unit 71 returns the process to step S301.

[0122] On the other hand, if it is determined that the ozonated water treatment of the wafer W is complete (step S306 Yes), the control unit 71 opens the valve 37 for a predetermined time and discharges the ozonated water from the treatment tank 31 (step S208).

[0123] In the substrate processing according to Modified Example 2, during the ozonated water treatment of the wafer W, the wafer W is heated by irradiation with light of a specific wavelength, then gas is supplied to the ozonated water, and after stopping the supply of gas to the ozonated water, the wafer W is heated again by irradiation with light of a specific wavelength. In other words, in the substrate processing according to Modified Example 2, during the ozonated water treatment of the wafer W, heating of the wafer W with light of a specific wavelength and supply of gas to the ozonated water are repeatedly performed.

[0124] This allows for repeated ozone water treatment using ozone water that is both high-temperature and highly fluid. Therefore, according to Modification 2, wafer W can be processed more efficiently with ozone water.

[0125] <Variation 3> Figure 7 is a cross-sectional view of the processing tank 31 according to the third modified embodiment, viewed from the positive X-axis direction to the negative X-axis direction. For ease of understanding, the first nozzle 33 is omitted in Figure 7.

[0126] As shown in Figure 7, in the substrate processing apparatus 1 according to the modified example 3, the substrate processing unit 30 is equipped with a substrate holding unit 32A instead of a substrate holding unit 32.

[0127] The substrate holder 32A holds one wafer W. The substrate holder 32A is configured to be vertically movable relative to the processing tank 31, and can hold one wafer W and move up and down between a standby position above the processing tank 31 and an immersion position inside the processing tank 31. In the immersion position, the entire wafer W is immersed in the processing liquid. In the standby position, the substrate holder 32A can receive a wafer W from a substrate transport device (not shown) that transports one wafer W, and can lower the received wafer W from the standby position to the immersion position and place it in the immersion position.

[0128] Figure 8 is a flowchart showing the substrate processing procedure performed by the substrate processing apparatus 1 according to the modified embodiment 3. In modified embodiment 3, the same reference numerals are used for processes similar to those in modified embodiment 1, and their detailed descriptions are omitted.

[0129] As shown in Figure 8, the substrate processing apparatus 1 first supplies ozonated water from the first nozzle 33 (step S201).

[0130] Next, the substrate processing apparatus 1 loads the wafer W into the processing tank 31 (step S401). Specifically, the control unit 71 controls the substrate holding unit 32A to lower the wafer W from the standby position to the immersion position, thereby immersing the wafer W in the ozonated water stored in the processing tank 31.

[0131] Next, the control unit 71 controls the light irradiation unit 80 to irradiate the wafer W with light of a wavelength that can penetrate the ozonated water, i.e., light of a specific wavelength, and heat the wafer W to a given temperature (step S203).

[0132] Next, the control unit 71 controls the substrate holding unit 32A to raise and lower the wafer W in the ozonated water (step S402).

[0133] As described above, in the modified example 3, the wafer W is heated by irradiating it with light of a specific wavelength while it is being raised and lowered in ozonated water. This makes it possible to form a liquid flow of ozonated water near the surface of one wafer W located inside the processing tank 31. This improves the peelability of the resist film on the surface of the wafer W.

[0134] Next, the substrate processing apparatus 1 supplies pressurized ozonated water from the second nozzle 34 (step S204). Subsequently, the substrate processing apparatus 1 supplies gas from the third nozzle 35 (step S205).

[0135] Next, the control unit 71 determines whether or not the ozonated water treatment of the wafer W is complete (step S206). For example, the control unit 71 may terminate the ozonated water treatment of the wafer W when a predetermined amount of time has elapsed since the wafer W was brought into the treatment tank 31 in step S401.

[0136] If the ozonated water treatment of the wafer W is not completed in step S206 (step S206No), the control unit 71 returns the process to step S206 and continues the ozonated water treatment.

[0137] On the other hand, if it is determined that the ozonated water treatment of the wafer W is complete (step S206 Yes), the control unit 71 stops irradiating the wafer W with light of a specific wavelength, raising and lowering the wafer W, supplying ozonated water from the second nozzle 34, and supplying gas from the third nozzle 35 (step S403).

[0138] As described above, the substrate processing method according to the embodiment includes an immersion step (for example, steps S102, S202, and S401) and a heating step (steps S103, S203, and S301). In the immersion step, the substrate (for example, a wafer W) is immersed in ozonated water. In the heating step, while the substrate is immersed in ozonated water, the substrate is heated by irradiating it with light of a wavelength that can penetrate the ozonated water. This allows the substrate to be processed efficiently with ozonated water.

[0139] Furthermore, the wavelength of the light may be between 350 nm and 600 nm. This allows for selective heating of the substrate surface while suppressing the temperature rise of the ozonated water surrounding the substrate.

[0140] Furthermore, the ozone concentration in the ozonated water may be between 10 ppm and 200 ppm. This allows for more efficient processing of substrates with ozonated water.

[0141] Alternatively, the immersion process may involve immersing the substrate in ozonated water stored in a treatment tank (for example, treatment tank 31) that has an opening at the top and is used to immerse the substrate in ozonated water for processing. This allows for efficient processing of the substrate with ozonated water stored in the treatment tank.

[0142] Furthermore, the heating process may be carried out while raising and lowering the substrate in ozonated water stored in the treatment tank. This allows for more efficient treatment of the substrate with ozonated water.

[0143] Furthermore, the heating process may be carried out by supplying pressurized ozonated water from the ozonated water supply nozzle to the processing tank using an ozonated water supply nozzle (for example, a second nozzle 34) that supplies ozonated water to the processing tank and a pressurizing unit (for example, a pump 63) that pressurizes the ozonated water upstream of the ozonated water supply nozzle. This allows the substrate to be processed more efficiently with ozonated water.

[0144] Furthermore, the heating process may be carried out while supplying gas to the ozonated water stored in the processing tank from a gas supply nozzle (for example, a third nozzle 35). This allows the substrate to be processed more efficiently with ozonated water.

[0145] Furthermore, the substrate processing apparatus according to the embodiment (for example, substrate processing apparatus 1) comprises a processing tank (for example, processing tank 31), a light irradiation unit (for example, light irradiation unit 80), and a control unit (for example, control unit 71). The processing tank opens upward and processes the substrate (for example, wafer W) by immersing it in ozonated water. The light irradiation unit is provided in the processing tank and irradiates the substrate with light of a wavelength that can penetrate the ozonated water. The control unit immerses the substrate in the ozonated water stored in the processing tank and, while the substrate is immersed in the ozonated water, heats the substrate by irradiating it with light of a wavelength that can penetrate the ozonated water using the light irradiation unit. This makes it possible to efficiently process the substrate with ozonated water.

[0146] Furthermore, the processing tank may have a light-transmitting section (for example, a light-transmitting section 31a) on at least one of the two side walls facing the main surface of the substrate and the back surface opposite the main surface, which is in contact with the ozonated water and transmits light. The light irradiation section may be placed on the outer surface (for example, the outer surface 31a1) opposite to the inner surface of the light-transmitting section that is in contact with the ozonated water. This allows the main surface of the substrate to be heated efficiently.

[0147] Furthermore, the substrate processing apparatus may further include a substrate holding section (for example, a substrate holding section 32) fixed inside the processing tank and holding the substrate in a position where the substrate is immersed in ozonated water. The control unit may control a substrate transport device that transports the substrate to transfer the substrate to the substrate holding section, thereby immersing the substrate in the ozonated water stored in the processing tank. This makes it possible to easily immerse the substrate in ozonated water.

[0148] Furthermore, the substrate processing apparatus may further include a substrate holding unit (for example, a substrate holding unit 32A) that holds the substrate and moves it up and down between a standby position above the processing tank and an immersion position inside the processing tank. The control unit may use the substrate holding unit to lower the substrate from the standby position to the immersion position and immerse it in the ozonated water stored in the processing tank, and while moving the substrate up and down in the ozonated water using the substrate holding unit, heat the substrate by irradiating it with light using a light irradiation unit. This allows the substrate to be processed more efficiently with ozonated water.

[0149] Furthermore, the substrate holder may hold a single substrate. This allows for efficient processing of a single substrate held by the substrate holder using ozonated water.

[0150] Furthermore, the substrate processing apparatus may also include a gas supply nozzle (for example, a third nozzle 35) for supplying gas to the ozonated water stored in the processing tank. The control unit may heat the substrate by irradiating it with light using a light irradiation unit while supplying gas to the ozonated water from the gas supply nozzle. This allows the substrate to be processed more efficiently with ozonated water.

[0151] Furthermore, the gas supply nozzle may be positioned below the substrate inside the treatment tank. This allows the substrate to be treated more efficiently with ozonated water.

[0152] Furthermore, the gas may be at least one of nitrogen gas, oxygen gas, ozone gas, and air. This allows for more efficient processing of the substrate with ozonated water.

[0153] The substrate processing apparatus may further include an ozone water supply nozzle (for example, a second nozzle 34) for supplying ozone water to the processing tank, and a pressurizing unit (for example, a pump 63) for pressurizing the ozone water upstream of the ozone water supply nozzle. The control unit may heat the substrate by irradiating it with light using a light irradiation unit while supplying pressurized ozone water from the ozone water supply nozzle to the processing tank. This allows the substrate to be processed with ozone water more efficiently.

[0154] Furthermore, the substrate processing apparatus may also be provided with a throttle valve (for example, a throttle valve 65) located downstream of the pressurizing section in the ozone water supply path to the ozone water supply nozzle, which adjusts the pressure of the ozone water pressurized by the pressurizing section. This allows for more efficient processing of substrates with ozone water.

[0155] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of Symbols]

[0156] 1. Substrate processing device 30. Circuit board processing unit 31 Processing tank 31a Light transmitting part 31a1 External surface 32, 32A board holder 33. Nozzle No. 1 34. Second nozzle 35 Third Nozzle 63 pumps 64 Flow meter 70 Control device 71 Control Unit 72 Memory section 80 Light-irradiating section W wafer

Claims

1. The process involves immersing the substrate in ozonated water, A heating step is performed in which the substrate is immersed in the ozonated water, and the substrate is heated by irradiating it with light of a wavelength that can penetrate the ozonated water. A substrate processing method, including the following.

2. The wavelength of the light is between 350 nm and 600 nm. The substrate processing method according to claim 1.

3. The ozone concentration in the ozonated water is between 10 ppm and 200 ppm. The substrate processing method according to claim 1.

4. The aforementioned immersion process is The substrate is immersed in ozonated water stored in a processing tank that has an opening at the top and processes the substrate by immersing it in ozonated water. The substrate processing method according to claim 1.

5. The aforementioned heating step is The process is carried out while raising and lowering the substrate in the ozonated water stored in the treatment tank. The substrate processing method according to claim 4.

6. The aforementioned heating step is The process is carried out using an ozone water supply nozzle that supplies ozone water to the treatment tank, and a pressurizing unit that pressurizes the ozone water upstream of the ozone water supply nozzle, while supplying pressurized ozone water from the ozone water supply nozzle to the treatment tank. The substrate processing method according to claim 4.

7. The aforementioned heating step is The process is carried out while supplying the ozonated water stored in the treatment tank from a gas supply nozzle that supplies the gas to the ozonated water. The substrate processing method according to claim 4.

8. A processing tank with an opening at the top, in which the substrate is immersed in ozonated water for processing, The processing tank is provided with a light irradiation unit that irradiates the substrate with light of a wavelength that can penetrate the ozonated water, Control unit and Equipped with, The control unit, The substrate is immersed in the ozonated water stored in the treatment tank. With the substrate immersed in the ozonated water, the substrate is heated by irradiating it with light of a wavelength that can penetrate the ozonated water using the light irradiation unit. Circuit board processing equipment.

9. The aforementioned processing tank is The substrate has a light-transmitting portion on at least one of the two side walls facing the main surface and the back surface opposite to the main surface, which is in contact with the ozonated water and transmits the light. The light irradiation unit is It is disposed on the outer surface of the light-transmitting portion opposite to the inner surface that is in contact with the ozonated water. The substrate processing apparatus according to claim 8.

10. The processing tank further comprises a substrate holding part that is fixed inside the processing tank and holds the substrate in a position where the substrate is immersed in the ozonated water, The control unit, The substrate transport device is controlled to transfer the substrate to the substrate holding unit, thereby immersing the substrate in the ozonated water stored in the processing tank. The substrate processing apparatus according to claim 8.

11. The substrate holding unit further comprises a substrate holding unit that holds the substrate and moves it up and down between a standby position above the processing tank and an immersion position inside the processing tank. The control unit, Using the substrate holding part, the substrate is lowered from the standby position to the immersion position and immersed in the ozonated water stored in the treatment tank. The substrate is raised and lowered in the ozonated water using the substrate holding unit, and the substrate is heated by irradiating it with light using the light irradiation unit. The substrate processing apparatus according to claim 8.

12. The substrate holding portion is Holding one of the aforementioned substrates The substrate processing apparatus according to claim 10 or 11.

13. The treatment tank further comprises a gas supply nozzle for supplying gas to the ozonated water stored in the treatment tank, The control unit, While supplying the gas to the ozonated water from the gas supply nozzle, the substrate is heated by irradiating it with light using the light irradiation unit. The substrate processing apparatus according to claim 8.

14. The aforementioned gas supply nozzle is Displaced below the substrate inside the processing tank The substrate processing apparatus according to claim 13.

15. The aforementioned gas is It is at least one of nitrogen gas, oxygen gas, ozone gas, and air. The substrate processing apparatus according to claim 13.

16. An ozone water supply nozzle for supplying ozone water to the aforementioned treatment tank, A pressurizing unit that pressurizes the ozone water upstream of the ozone water supply nozzle, Furthermore, The control unit, The pressurized ozone water is supplied to the treatment tank from the ozone water supply nozzle by the pressurizing unit, while the substrate is heated by irradiating it with light using the light irradiation unit. The substrate processing apparatus according to claim 8.

17. A throttle valve is provided downstream of the pressurizing section in the ozone water supply path to the ozone water supply nozzle, and adjusts the pressure of the ozone water pressurized by the pressurizing section. The substrate processing apparatus according to claim 16, further comprising

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